Dual-frequency glow discharges in atmospheric helium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Xiaojiang; Guo, Ying; Magnetic Confinement Fusion Research Center, Ministry of Education of the People's Republic of China, Shanghai 201620

2015-10-15

In this paper, the dual-frequency (DF) glow discharges in atmospheric helium were experimented by electrical and optical measurements in terms of current voltage characteristics and optical emission intensity. It is shown that the waveforms of applied voltages or discharge currents are the results of low frequency (LF) waveforms added to high frequency (HF) waveforms. The HF mainly influences discharge currents, and the LF mainly influences applied voltages. The gas temperatures of DF discharges are mainly affected by HF power rather than LF power.

Thermal Assisted In Vivo Gene Electrotransfer

PubMed Central

Donate, Amy; Bulysheva, Anna; Edelblute, Chelsea; Jung, Derrick; Malik, Mohammad A.; Guo, Siqi; Burcus, Niculina; Schoenbach, Karl; Heller, Richard

2016-01-01

Gene electrotransfer is an effective approach for delivering plasmid DNA to a variety of tissues. Delivery of molecules with electric pulses requires control of the electrical parameters to achieve effective delivery. Since discomfort or tissue damage may occur with high applied voltage, the reduction of the applied voltage while achieving the desired expression may be an important improvement. One possible approach is to combine electrotransfer with exogenously applied heat. Previous work performed in vitro demonstrated that increasing temperature before pulsing can enhance gene expres sion and made it possible to reduce electric fields while maintaining expression levels. In the study reported here, this combination was evaluated in vivo using a novel electrode device designed with an inserted laser for application of heat. The results obtained in this study demonstrated that increased temperature during electrotransfer increased expression or maintained expression with a reduction in applied voltage. With further optimization this approach may provide the basis for both a novel method and a novel instrument that may greatly enhance translation of gene electrotransfer. PMID:27029944

Multilayer Piezoelectric Stack Actuator Characterization

NASA Technical Reports Server (NTRS)

Sherrit, Stewart; Jones, Christopher M.; Aldrich, Jack B.; Blodget, Chad; Bao, Xioaqi; Badescu, Mircea; Bar-Cohen, Yoseph

2008-01-01

Future NASA missions are increasingly seeking to use actuators for precision positioning to accuracies of the order of fractions of a nanometer. For this purpose, multilayer piezoelectric stacks are being considered as actuators for driving these precision mechanisms. In this study, sets of commercial PZT stacks were tested in various AC and DC conditions at both nominal and extreme temperatures and voltages. AC signal testing included impedance, capacitance and dielectric loss factor of each actuator as a function of the small-signal driving sinusoidal frequency, and the ambient temperature. DC signal testing includes leakage current and displacement as a function of the applied DC voltage. The applied DC voltage was increased to over eight times the manufacturers' specifications to investigate the correlation between leakage current and breakdown voltage. Resonance characterization as a function of temperature was done over a temperature range of -180C to +200C which generally exceeded the manufacturers' specifications. In order to study the lifetime performance of these stacks, five actuators from one manufacturer were driven by a 60volt, 2 kHz sine-wave for ten billion cycles. The tests were performed using a Lab-View controlled automated data acquisition system that monitored the waveform of the stack electrical current and voltage. The measurements included the displacement, impedance, capacitance and leakage current and the analysis of the experimental results will be presented.

Continuous plasma laser. [method and apparatus for producing intense, coherent, monochromatic light from low temperature plasma

NASA Technical Reports Server (NTRS)

Libby, W. F.; Jensen, C. A.; Wood, L. L. (Inventor)

1977-01-01

The apparatus includes a housing for confining a gas at subatmospheric pressure and including a set of reflectors defining an optical cavity. At least one anode and cathode are positioned within the gas. First control means control the voltage applied to the anode and second control means independently control the temperature of the cathode. The pressure of the gas is controlled by a third control means. An intense monochromatic output is achieved by confining the gas in the housing at a controlled pre-determined reduced pressure, independently controlling the temperature of the electron emitting cathode and applying predetermined controlled low voltage to the anode.

Retention behavior of neutral solutes in pressurized flow-driven capillary electrochromatography using an ODS column.

PubMed

Nakagawa, Hiroyuki; Kitagawa, Shinya; Araki, Shuki; Ohtani, Hajime

2006-02-01

Several alkyl benzenes are separated by pressurized flow-driven capillary electrochromatography using a temperature-controlled capillary column packed with octadecyl siloxane-modified silica gel, and the effect of applied voltage on the retention is investigated. The van't Hoff plot shows good linearity at the column temperature between 305 and 330 K under applications from -6 to +6 kV. The applied voltage causes a relatively large variation in the enthalpy and the entropy of transfer of the solute from the mobile phase to the stationary phase (> 20%). However, the direction of variation in the enthalpy is almost opposite to that in the entropy, both of which might compensate each other. Therefore, the retention factor is not significantly varied (< 4%) by the application of voltage.

Effect of applied voltage on surface properties of anodised titanium in mixture of β-glycerophosphate (β-GP) and calcium acetate (CA)

NASA Astrophysics Data System (ADS)

Chuan, Lee Te; Rathi, Muhammad Fareez Mohamad; Abidin, Muhamad Yusuf Zainal; Abdullah, Hasan Zuhudi; Idris, Maizlinda Izwana

2015-07-01

Anodic oxidation is a surface modification method which combines electric field driven metal and oxygen ion diffusion for formation of oxide layer on the anode surface. This method has been widely used to modify the surface morphology of biomaterial especially titanium. This study aimed to investigate the effect of applied voltage on titanium. Specifically, the titanium foil was anodised in mixture of β-glycerophosphate disodium salt pentahydrate (β-GP) and calcium acetate monohydrate (CA) with different applied voltage (50-350 V), electrolyte concentration (0.04 M β-GP + 0.4 M CA), anodising time (10minutes) and current density (50 and 70 mA.cm-2) at room temperature. Surface oxide properties of anodised titanium were characterised by digital single-lens reflex camera (DSLR camera), field emission scanning electron microscope (FESEM) and atomic force microscopy (AFM). At lower applied voltage (≤150 V), surface of titanium foils were relatively smooth. With increasing applied voltage (≥250 V), the oxide layer became more porous and donut-shaped pores were formed on the surface of titanium foils. The AFM results indicated that the surface roughness of anodised titanium increases with increasing of applied voltage. The porous and rough surface is able to promote the osseointegration and reduce the suffering time of patient.

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

NASA Astrophysics Data System (ADS)

Wang, Ning; Wang, Hui; Lin, Xinpeng; Qi, Yongle; Duan, Tianli; Jiang, Lingli; Iervolino, Elina; Cheng, Kai; Yu, Hongyu

2017-09-01

Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. The nitrogen vacancy near to the AlGaN/GaN interface leads to threshold voltage of stress-free sample shifting positively at low temperature. The anomalous behavior of threshold voltage variation (decrease first and then increase) under gate stressing as compared to stress-free sample is observed when lowing temperature. This can be correlated with the pre-existing electron traps in SiNX layer or at SiNX/AlGaN interface which can be de-activated and the captured electrons inject back to channel with lowering temperature, which counterbalances the influence of nitrogen vacancy on threshold voltage shift.

The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

NASA Astrophysics Data System (ADS)

Szmyd, Janusz S.; Komatsu, Yosuke; Brus, Grzegorz; Ghigliazza, Francesco; Kimijima, Shinji; Ściążko, Anna

2014-09-01

This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V) correlation. The current-based fuel control (CBFC) was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

Apparatus for combinatorial screening of electrochemical materials

DOEpatents

Kepler, Keith Douglas [Belmont, CA; Wang, Yu [Foster City, CA

2009-12-15

A high throughput combinatorial screening method and apparatus for the evaluation of electrochemical materials using a single voltage source (2) is disclosed wherein temperature changes arising from the application of an electrical load to a cell array (1) are used to evaluate the relative electrochemical efficiency of the materials comprising the array. The apparatus may include an array of electrochemical cells (1) that are connected to each other in parallel or in series, an electronic load (2) for applying a voltage or current to the electrochemical cells (1), and a device (3), external to the cells, for monitoring the relative temperature of each cell when the load is applied.

Heating of solid earthen material, measuring moisture and resistivity

DOEpatents

Heath, W.O.; Richardson, R.L.; Goheen, S.C.

1994-07-19

The present invention includes a method of treating solid earthen material having volatile, semi-volatile, and non-volatile contaminants. Six electrodes are inserted into a region of earthen material to be treated in a substantially equilateral hexagonal arrangement. Six phases of voltages are applied to corresponding electrodes. The voltages are adjusted within a first range of voltages to create multiple current paths between pairs of the electrodes. The current paths are evenly distributed throughout the region defined by the electrodes and therefore uniformly heat the region. The region of earthen material is heated to a temperature sufficient to substantially remove volatile and semi-volatile contaminants by promoting microbial action. This temperature is less than a melting temperature of the earthen material. 13 figs.

Heating of solid earthen material, measuring moisture and resistivity

DOEpatents

Heath, William O.; Richardson, Richard L.; Goheen, Steven C.

1994-01-01

The present invention includes a method of treating solid earthen material having volatile, semi-volatile, and non-volatile contaminants. Six electrodes are inserted into a region of earthen material to be treated in a substantially equilateral hexagonal arrangement. Six phases of voltages are applied to corresponding electrodes. The voltages are adjusted within a first range of voltages to create multiple current paths between pairs of the electrodes. The current paths are evenly distributed throughout the region defined by the electrodes and therefore uniformly heat the region. The region of earthen material is heated to a temperature sufficient to substantially remove volatile and semi-volatile contaminants by promoting microbial action. This temperature is less than a melting temperature of the earthen material.

A novel method of temperature compensation for piezoresistive microcantilever-based sensors.

PubMed

Han, Jianqiang; Wang, Xiaofei; Yan, Tianhong; Li, Yan; Song, Meixuan

2012-03-01

Microcantilever with integrated piezoresistor has been applied to in situ surface stress measurement in the field of biochemical sensors. It is well known that piezoresistive cantilever-based sensors are sensitive to ambient temperature changing due to highly temperature-dependent piezoresistive effect and mismatch in thermal expansion of composite materials. This paper proposes a novel method of temperature drift compensation for microcantilever-based sensors with a piezoresistive full Wheatstone bridge integrated at the clamped ends by subtracting the amplified output voltage of the reference cantilever from the output voltage of the sensing cantilever through a simple temperature compensating circuit. Experiments show that the temperature drift of microcantilever sensors can be significantly reduced by the method.

Effect of applied voltage on surface properties of anodised titanium in mixture of β-glycerophosphate (β-GP) and calcium acetate (CA)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chuan, Lee Te, E-mail: gd130079@siswa.uthm.edu.my; Rathi, Muhammad Fareez Mohamad, E-mail: cd110238@siswa.uthm.edu.my; Abidin, Muhamad Yusuf Zainal, E-mail: cd110221@siswa.uthm.edu.my

Anodic oxidation is a surface modification method which combines electric field driven metal and oxygen ion diffusion for formation of oxide layer on the anode surface. This method has been widely used to modify the surface morphology of biomaterial especially titanium. This study aimed to investigate the effect of applied voltage on titanium. Specifically, the titanium foil was anodised in mixture of β-glycerophosphate disodium salt pentahydrate (β-GP) and calcium acetate monohydrate (CA) with different applied voltage (50-350 V), electrolyte concentration (0.04 M β-GP + 0.4 M CA), anodising time (10minutes) and current density (50 and 70 mA.cm{sup −2}) at room temperature. Surfacemore » oxide properties of anodised titanium were characterised by digital single-lens reflex camera (DSLR camera), field emission scanning electron microscope (FESEM) and atomic force microscopy (AFM). At lower applied voltage (≤150 V), surface of titanium foils were relatively smooth. With increasing applied voltage (≥250 V), the oxide layer became more porous and donut-shaped pores were formed on the surface of titanium foils. The AFM results indicated that the surface roughness of anodised titanium increases with increasing of applied voltage. The porous and rough surface is able to promote the osseointegration and reduce the suffering time of patient.« less

Numerical investigation of the effect of driving voltage pulse shapes on the characteristics of low-pressure argon dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eslami, E., E-mail: eeslami@iust.ac.ir; Barjasteh, A.; Morshedian, N.

2015-06-15

In this work, we numerically compare the effect of a sinusoidal, triangular, and rectangular pulsed voltage profile on the calculated particle production, electric current, and gas voltage in a dielectric barrier discharge. The total argon gas pressure of 400 Pa, the distance between dielectrics of 5 mm, the dielectric thickness of 0.7 mm, and the temperature of T = 300 K were considered as input parameters. The different driving voltage pulse shapes (triangular, rectangular, and sinusoidal) are considered as applied voltage with a frequency of 7 kHz and an amplitude of 700 V peak to peak. It is shown thatmore » applying a rectangular voltage, as compared with a sinusoidal or triangle voltage, increases the current peak, while the peak width is decreased. Higher current density is related to high production of charged particles, which leads to the generation of some highly active species, such as Ar* (4s level), and Ar** (4p level) in the gap.« less

Macro Fiber Piezocomposite Actuator Poling Study

NASA Technical Reports Server (NTRS)

Werlink, Rudy J.; Bryant, Robert G.; Manos, Dennis

2002-01-01

The performance and advantages of Piezocomposite Actuators are to provide a low cost, in-situ actuator/sensor that is flexible, low profile and high strain per volt performance in the same plane of poled voltage. This paper extends reported data for the performance of these Macrofiber Composite (MFC) Actuators to include 4 progressively narrower Intedigitized electrode configurations with several line widths and spacing ratios. Data is reported for max free strain, average strain per applied volt, poling (alignment of the electric dipoles of the PZT ceramic) voltage vs. strain and capacitance, time to poling voltage 95% saturation. The output strain per volt progressively increases as electrode spacing decreases, with saturation occurring at lower poling voltages. The narrowest spacing ratio becomes prone to voltage breakdown or short circuits limiting the spacing width with current fabrication methods. The capacitance generally increases with increasing poling voltage level but has high sensitivity to factors such as temperature, moisture and time from poling which limit its usefulness as a simple indicator. The total time of applied poling voltage to saturate or fully line up the dipoles in the piezoceramic was generally on the order of 5-20 seconds. Less sensitivity to poling due to the applied rate of voltage increase over a 25 to 500 volt/second rate range was observed.

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Unraveling the temperature and voltage dependence of magnetic field effects in organic semiconductors

NASA Astrophysics Data System (ADS)

Janssen, Paul; Wouters, Steinar H. W.; Cox, Matthijs; Koopmans, Bert

2013-11-01

In recent years, it was discovered that the current through an organic semiconductor, sandwiched between two non-magnetic electrodes, can be changed significantly by applying a small magnetic field. This surprisingly large magnetoresistance effect, often dubbed as organic magnetoresistance (OMAR), has puzzled the young field of organic spintronics during the last decade. Here, we present a detailed study on the voltage and temperature dependence of OMAR, aiming to unravel the lineshapes of the magnetic field effects and thereby gain a deeper fundamental understanding of the underlying microscopic mechanism. Using a full quantitative analysis of the lineshapes, we are able to extract all linewidth parameters and the voltage and temperature dependencies are explained with a recently proposed trion mechanism. Moreover, explicit microscopic simulations show a qualitative agreement to the experimental results.

Control of plasma properties in a short direct-current glow discharge with active boundaries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adams, S. F.; Demidov, V. I., E-mail: vladimir.demidov@mail.wvu.edu; West Virginia University, Morgantown, West Virginia 26506

2016-02-15

To demonstrate controlling electron/metastable density ratio and electron temperature by applying negative voltages to the active (conducting) discharge wall in a low-pressure plasma with nonlocal electron energy distribution function, modeling has been performed in a short (lacking the positive-column region) direct-current glow discharge with a cold cathode. The applied negative voltage can modify the trapping of the low-energy part of the energetic electrons that are emitted from the cathode sheath and that arise from the atomic and molecular processes in the plasma within the device volume. These electrons are responsible for heating the slow, thermal electrons, while production of slowmore » electrons (ions) and metastable atoms is mostly due to the energetic electrons with higher energies. Increasing electron temperature results in increasing decay rate of slow, thermal electrons (ions), while decay rate of metastable atoms and production rates of slow electrons (ions) and metastable atoms practically are unchanged. The result is in the variation of electron/metastable density ratio and electron temperature with the variation of the wall negative voltage.« less

Study of electron mobility in small molecular SAlq by transient electroluminescence method

NASA Astrophysics Data System (ADS)

Kumar, Pankaj; Jain, S. C.; Kumar, Vikram; Chand, Suresh; Kamalasanan, M. N.; Tandon, R. P.

2007-12-01

The study of electron mobility of bis(2-methyl 8-hydroxyquinoline) (triphenyl siloxy) aluminium (SAlq) by transient electroluminescence (EL) is presented. An EL device is fabricated in bilayer, ITO/N,N'-diphenyl-N, N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD)/SAlq/LiF/Al configuration. The temporal evaluation of the EL with respect to the step voltage pulse is characterized by a delay time followed by a fast initial rise, which is followed by a slower rise. The delay time between the applied electrical pulse and the onset of EL is correlated with the carrier mobility (electron in our case). Transient EL studies for SAlq have been carried out at different temperatures and different applied electric fields. The electron mobility in SAlq is found to be field and temperature dependent and calculated to be 6.9 × 10-7 cm2 V-1 s-1 at 2.5 × 106 V cm-1 and 308 K. The EL decays immediately as the voltage is turned off and does not depend on the amplitude of the applied voltage pulse or dc offset.

Characteristics of temperature rise in variable inductor employing magnetorheological fluid driven by a high-frequency pulsed voltage source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Ho-Young; Kang, In Man, E-mail: imkang@ee.knu.ac.kr; Shon, Chae-Hwa

2015-05-07

A variable inductor with magnetorheological (MR) fluid has been successfully applied to power electronics applications; however, its thermal characteristics have not been investigated. To evaluate the performance of the variable inductor with respect to temperature, we measured the characteristics of temperature rise and developed a numerical analysis technique. The characteristics of temperature rise were determined experimentally and verified numerically by adopting a multiphysics analysis technique. In order to accurately estimate the temperature distribution in a variable inductor with an MR fluid-gap, the thermal solver should import the heat source from the electromagnetic solver to solve the eddy current problem. Tomore » improve accuracy, the B–H curves of the MR fluid under operating temperature were obtained using the magnetic property measurement system. In addition, the Steinmetz equation was applied to evaluate the core loss in a ferrite core. The predicted temperature rise for a variable inductor showed good agreement with the experimental data and the developed numerical technique can be employed to design a variable inductor with a high-frequency pulsed voltage source.« less

Nanosecond repetitively pulsed discharges in air at atmospheric pressure—the spark regime

NASA Astrophysics Data System (ADS)

Pai, David Z.; Lacoste, Deanna A.; Laux, Christophe O.

2010-12-01

Nanosecond repetitively pulsed (NRP) spark discharges have been studied in atmospheric pressure air preheated to 1000 K. Measurements of spark initiation and stability, plasma dynamics, gas temperature and current-voltage characteristics of the spark regime are presented. Using 10 ns pulses applied repetitively at 30 kHz, we find that 2-400 pulses are required to initiate the spark, depending on the applied voltage. Furthermore, about 30-50 pulses are required for the spark discharge to reach steady state, following initiation. Based on space- and time-resolved optical emission spectroscopy, the spark discharge in steady state is found to ignite homogeneously in the discharge gap, without evidence of an initial streamer. Using measured emission from the N2 (C-B) 0-0 band, it is found that the gas temperature rises by several thousand Kelvin in the span of about 30 ns following the application of the high-voltage pulse. Current-voltage measurements show that up to 20-40 A of conduction current is generated, which corresponds to an electron number density of up to 1015 cm-3 towards the end of the high-voltage pulse. The discharge dynamics, gas temperature and electron number density are consistent with a streamer-less spark that develops homogeneously through avalanche ionization in volume. This occurs because the pre-ionization electron number density of about 1011 cm-3 produced by the high frequency train of pulses is above the critical density for streamer-less discharge development, which is shown to be about 108 cm-3.

Controlling Metastable Native Point-Defect Populations in Cu(In,Ga)Se 2 and Cu 2ZnSnSe 4 Materials and Solar Cells through Voltage-Bias Annealing

DOE PAGES

Teeter, Glenn; Harvey, Steve P.; Johnston, Steve

2017-01-30

Our contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu 2ZnSnSe 4 (CZTSe), Cu(In,Ga)Se 2 (CIGS), and CdS material properties and solar cell performance. In order to quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 degrees C to 215 degrees C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200more » degrees C for CIGS and 110 degrees C-215 degrees C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Our results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including the effects of voltage bias can dramatically alter point-defect-mediated opto-electronic properties of semiconductors. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.« less

Controlling metastable native point-defect populations in Cu(In,Ga)Se2 and Cu2ZnSnSe4 materials and solar cells through voltage-bias annealing

NASA Astrophysics Data System (ADS)

Teeter, G.; Harvey, S. P.; Johnston, S.

2017-01-01

This contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu2ZnSnSe4 (CZTSe), Cu(In,Ga)Se2 (CIGS), and CdS material properties and solar cell performance. To quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 °C to 215 °C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200 °C for CIGS and 110 °C-215 °C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including the effects of voltage bias can dramatically alter point-defect-mediated opto-electronic properties of semiconductors. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.

Controlling Metastable Native Point-Defect Populations in Cu(In,Ga)Se 2 and Cu 2ZnSnSe 4 Materials and Solar Cells through Voltage-Bias Annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teeter, Glenn; Harvey, Steve P.; Johnston, Steve

Our contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu 2ZnSnSe 4 (CZTSe), Cu(In,Ga)Se 2 (CIGS), and CdS material properties and solar cell performance. In order to quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 degrees C to 215 degrees C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200more » degrees C for CIGS and 110 degrees C-215 degrees C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Our results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including the effects of voltage bias can dramatically alter point-defect-mediated opto-electronic properties of semiconductors. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.« less

An 11 cm long atmospheric pressure cold plasma plume for applications of plasma medicine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu Xinpei; Jiang Zhonghe; Xiong Qing

2008-02-25

In this letter, a room temperature atmospheric pressure plasma jet device is reported. The high voltage electrode of the device is covered by a quartz tube with one end closed. The device, which is driven by a kilohertz ac power supply, is capable of generating a plasma plume up to 11 cm long in the surrounding room air. The rotational and vibrational temperatures of the plasma plume are 300 and 2300 K, respectively. A simple electrical model shows that, when the plasma plume is contacted with a human, the voltage drop on the human is less than 66 V formore » applied voltage of 5 kV (rms)« less

A Novel High-Sensitivity, Low-Power, Liquid Crystal Temperature Sensor

PubMed Central

Algorri, José Francisco; Urruchi, Virginia; Bennis, Noureddine; Sánchez-Pena, José Manuel

2014-01-01

A novel temperature sensor based on nematic liquid crystal permittivity as a sensing magnitude, is presented. This sensor consists of a specific micrometric structure that gives considerable advantages from other previous related liquid crystal (LC) sensors. The analytical study reveals that permittivity change with temperature is introduced in a hyperbolic cosine function, increasing the sensitivity term considerably. The experimental data has been obtained for ranges from −6 °C to 100 °C. Despite this, following the LC datasheet, theoretical ranges from −40 °C to 109 °C could be achieved. These results have revealed maximum sensitivities of 33 mVrms/°C for certain temperature ranges; three times more than of most silicon temperature sensors. As it was predicted by the analytical study, the micrometric size of the proposed structure produces a high output voltage. Moreover the voltage's sensitivity to temperature response can be controlled by the applied voltage. This response allows temperature measurements to be carried out without any amplification or conditioning circuitry, with very low power consumption. PMID:24721771

Wireless Infrared Data Link

NASA Technical Reports Server (NTRS)

Roth, Timothy E.

1995-01-01

Infrared transmitter and receiver designed for wireless transmission of information on measured physical quantity (for example, temperature) from transducer device to remote-acquisition system. In transmitter, output of transducer amplified and shifted with respect to bias or reference level, then fed to voltage-to-frequency converter to control frequency of repetition of current pulses applied to infrared-light-emitting diode. In receiver, frequency of repetition of pulses converted back into voltage indicative of temperature or other measured quantity. Potential applications include logging data while drilling for oil, transmitting measurements from rotors in machines without using slip rings, remote monitoring of temperatures and pressures in hazardous locations, and remote continuous monitoring of temperatures and blood pressures in medical patients, who thus remain mobile.

Behavior of Triple Langmuir Probes in Non-Equilibrium Plasmas

NASA Technical Reports Server (NTRS)

Polzin, Kurt A.; Ratcliffe, Alicia C.

2018-01-01

The triple Langmuir probe is an electrostatic probe in which three probe tips collect current when inserted into a plasma. The triple probe differs from a simple single Langmuir probe in the nature of the voltage applied to the probe tips. In the single probe, a swept voltage is applied to the probe tip to acquire a waveform showing the collected current as a function of applied voltage (I-V curve). In a triple probe three probe tips are electrically coupled to each other with constant voltages applied between each of the tips. The voltages are selected such that they would represent three points on the single Langmuir probe I-V curve. Elimination of the voltage sweep makes it possible to measure time-varying plasma properties in transient plasmas. Under the assumption of a Maxwellian plasma, one can determine the time-varying plasma temperature T(sub e)(t) and number density n(sub e)(t) from the applied voltage levels and the time-histories of the collected currents. In the present paper we examine the theory of triple probe operation, specifically focusing on the assumption of a Maxwellian plasma. Triple probe measurements have been widely employed for a number of pulsed and timevarying plasmas, including pulsed plasma thrusters (PPTs), dense plasma focus devices, plasma flows, and fusion experiments. While the equilibrium assumption may be justified for some applications, it is unlikely that it is fully justifiable for all pulsed and time-varying plasmas or for all times during the pulse of a plasma device. To examine a simple non-equilibrium plasma case, we return to basic governing equations of probe current collection and compute the current to the probes for a distribution function consisting of two Maxwellian distributions with different temperatures (the two-temperature Maxwellian). A variation of this method is also employed, where one of the Maxwellians is offset from zero (in velocity space) to add a suprathermal beam of electrons to the tail of the main Maxwellian distribution (the bump-on-the-tail distribution function). For a range of parameters in these non-Maxwellian distributions, we compute the current collection to the probes. We compare the distribution function that was assumed a priori with the distribution function one would infer when applying standard triple probe theory to analyze the collected currents. For the assumed class of non-Maxwellian distribution functions this serves to illustrate the effect a non-Maxwellian plasma would have on results interpreted using the equilibrium triple probe current collection theory, allowing us to state the magnitudes of these deviations as a function of the assumed distribution function properties.

The effects of cathodic micro-voltage combined with hydrothermal pretreatment on methane fermentation of lignocellulose substrate

NASA Astrophysics Data System (ADS)

Liu, Dianxin; Ning, Ping; Qu, Guangfei; Huang, Xi; Liu, Yuhuan; Zhang, Jian

2017-05-01

The methane fermentation study assisted with cathodic micro-voltage was carried out to investigate the electric field effects on the fermentation of hydrothermally pretreated lignocellulose substrate. It was illustrated that a 0.25V cathode voltage and hydrothermal pretreatment could improve the biogas production, biogas quality and lignocellulose degradation ratio significantly. The cumulative biogas productions in the fermentation of hydrothermally pretreated cow dungs at 50°C, 150°C and 200°C with a 0.25V cathode voltage were observed in a total of 6640mL, 9218mL and 9456mL respectively over a detention time of 33 days. In comparison with the fermentation pretreated at 200°C without any voltage, nearly doubled of cumulative biogas production was obtained in the process of cathode-assisted fermentation. It was also observed that the daily methane content greater than or equal to 70% in the biogas generated with cathode voltage were clearly greater than that without voltages. Furthermore, the fermentation applied with a 0.25V cathode voltage had resulted into significant increases of 12.64% and 9.44% in lignin and cellulose degradation ratio relative to voltage free fermentation. And in the process of fermentation applied with cathode voltage, the final lignocellulose degradation ratio increased with the hydrothermal pretreatment temperature. Thus, the hydrothermal pretreatment and assisting fermentation with low cathode voltage can effectively promote the lignocellulose degradation. All results revealed that cathodic micro-voltage combined with hydrothermal pretreatment can remarkably improve the fermentation of lignocellulosic materials, indicating that a more effective fermentation technology can be developed by applying with cathodic micro-voltage.

Effect of anode-cathode geometry on performance of the HIP-1 hot ion plasma. [magnetic mirrors

NASA Technical Reports Server (NTRS)

Lauver, M. R.

1978-01-01

Hot-ion hydrogen plasma experiments were conducted in the NASA Lewis HIP-1 magnetic mirror facility to determine how the ion temperature was influenced by the axial position of the cathode tips relative to the anodes. A steady-state EXB plasma was formed by applying a strong radially inward dc electric field near the throats of the magnetic mirrors. The dc electric field was created between hollow cathode rods inside hollow anode cylinders, both concentric with the magnetic axis. The highest ion temperatures, 900 eV, were attained when the tip of each cathode was in the same plane as the end of its anode. These temperatures were reached with 22 kV applied to the electrodes in a field of 1.1 tesla. Scaling relations were empirically determined for ion temperature and the product of ion density and neutral particle density as a function of cathode voltage, discharge current, and electrode positions. Plasma discharge current vs voltage (I-V) characteristics were determined.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

NASA Astrophysics Data System (ADS)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

2016-01-01

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge2Sb2Te5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

Nanowire Photonic Systems

DTIC Science & Technology

2009-12-22

b) From top to bottom, (i) AFM topograph of the p-i-n SiNW, (ii) plot of EFM phase-shift vs . position recorded along the nanowire axis and (iii...c) Current vs . applied voltage curve for a typical SiNW p-i-n junction at room temperature. (d) Current vs . applied reverse voltage data of a p-i...incident laser power. Iph vs . laser power (Figure 3c) measured at 22, 20 and 18 V show linear dependences with slopes of 1.16, 0.94 and 0.72 nA/μW

The effect of DC voltage polarity on ionic wind in ambient air for cooling purposes

NASA Astrophysics Data System (ADS)

Chen, She; van den Berg, R. G. W.; Nijdam, S.

2018-05-01

Gas flows can be induced by gas discharges like DC coronas because neutral molecules gain momentum by ion-neutral collisions. This can be used for active cooling and has advantages over mechanical fans. We investigate ionic wind by a DC corona discharge under different conditions with an emphasis on the effects of voltage polarity and the transition between different discharge regimes. We also consider the gas temperature of a DC corona which is important when it is to be used for cooling purposes. Although DC coronas are usually characterized as low temperature plasmas, gas heating can have a significant impact on flow generation, especially at higher operating voltages. In this paper, a 5–20 kV DC voltage of positive and negative polarity is applied to a needle–cylinder electrode. The ionic wind velocity at the exit of the cylinder electrode is measured by hot wire anemometry and the emission spectrum is used to study the gas temperature. It is found that the flow velocity induced by positive coronas is higher than that by negative coronas for voltages above 10–15 kV, which is also demonstrated by a phenomenological EHD force model. Furthermore, a heated column is observed by Schlieren technique for both voltage polarities. An improved self-consistent ionic wind model considering heat transfer is built to study the temperature distribution. The simulation results indicate that the gas flow velocity is lower on the symmetry axis when the temperature gradient is taken into account, something which is usually ignored in ionic wind simulations.

A Gain-Programmable Transit-Time-Stable and Temperature-Stable PMT Voltage Divider

NASA Astrophysics Data System (ADS)

Liu, Yaqiang; Li, Hongdi; Wang, Yu; Xing, Tao; Xie, Shuping; Uribe, J.; Baghaei, H.; Ramirez, R.; Kim, Soonseok; Wong, Wai-Hoi

2004-10-01

A gain-programmable, transit-time-stable, temperature-stable photomultiplier (PMT) voltage divider design is described in this paper. The signal-to-noise ratio can be increased by changing a PMT gain directly instead of adjusting the gain of the preamplifier. PMT gain can be changed only by adjusting the voltages for the dynodes instead of changing the total high voltage between the anode and the photocathode, which can cause a significant signal transit-time variation that cannot be accepted by an application with a critical timing requirement, such as positron emission tomography (PET) or time-of-flight (TOF) detection/PET. The dynode voltage can be controlled by a digital analog converter isolated with a linear optocoupler. The optocoupler consists of an infrared light emission diode (LED) optically coupled with two phototransistors, and one is used in a servo feedback circuit to control the LED drive current for compensating temperature characteristics. The results showed that a six times gain range could be achieved; the gain drift was <0.5% over a 20/spl deg/C temperature range; 250 ps transit-time variation was measured over the entire gain range. A compact print circuit board (PCB) for the voltage divider integrated with a fixed-gain preamplifier has been designed and constructed. It can save about $30 per PMT channel compared with a commercial PMT voltage divider along with a variable gain amplifier. The preamplifier can be totally disabled, therefore in a system with a large amount of PMTs, only one channel can be enabled for calibrating the PMT gain. This new PMT voltage divider design is being applied to our animal PET camera and TOF/PET research.

Organic Bistable Memory Switching Phenomena in Squarylium-Dye Langmuir-Blodgett Films

NASA Astrophysics Data System (ADS)

Kushida, Masahito; Inomata, Hisao; Miyata, Hiroshi; Harada, Kieko; Saito, Kyoichi; Sugita, Kazuyuki

2003-06-01

We have investigated the relationship between the switching phenomena and H-like aggregates in squarylium-dye Langmuir-Blodgett (SQ LB) films. The current-voltage characteristics of SQ LB films sandwiched between the top gold electrode and the bottom aluminum electrode indicated conductance switching phenomena below the temperature of 100°C but not at 140°C. Current densities suddenly increased at switching voltages between 2 and 4 V. The switching voltage increased as the temperature increased between room temperature and 100°C. Current densities were 50-100 μA/cm2 in a low-impedance state (ON state). A high-impedance state (OFF state) can be recovered by applying a reverse bias, and therefore, these bistable devices are ideal for memory applications. The dependence of conductance switching phenomena and ultraviolet-visible absorption spectra on annealing temperatures was studied. The results revealed that conductance switching phenomena were caused by the presence of H-like aggregates in the SQ LB films.

[Impact of introduction of O2 on the welding arc of gas pool coupled activating TIG].

PubMed

Huang, Yong; Wang, Yan-Lei; Zhang, Zhi-Guo

2014-05-01

In the present paper, Boltzmann plot method was applied to analyze the temperature distributions of the are plasma when the gas pool coupled activating TIG welding was at different coupling degrees with the outer gas being O2. Based on this study of temperature distributions, the changing regularities of are voltage and are appearance were studied. The result shows that compared with traditional TIG welding, the introduction of O2 makes the welding arc constricted slightly, the temperature of the are center build up, and the are voltage increase. When argon being the inner gas, oxygen serving as the outer gas instead of argon makes the are constricted more obviously. When the coupling degree increases from 0 to 2, the temperature of the are center and the are voltage both increase slightly. In the gas pool coupled activating TIG welding the are is constricted not obviously, and the reason why the weld penetration is improved dramatically in the welding of stainless steel is not are constriction.

Influence of anodization parameters on the morphology of TiO 2 nanotube arrays

NASA Astrophysics Data System (ADS)

Omidvar, Hamid; Goodarzi, Saba; Seif, Ahmad; Azadmehr, Amir R.

2011-07-01

TiO 2 nanotube arrays can be fabricated by electrochemical anodization in organic and inorganic electrolytes. Morphology of these nanotube arrays changes when anodization parameters such as applied voltage, type of electrolyte, time and temperature are varied. Nanotube arrays fabricated by anodization of commercial titanium in electrolytes containing NH 4F solution and either sulfuric or phosphoric acid were studied at room temperature; time of anodization was kept constant. Applied voltage, fluoride ion concentration, and acid concentrations were varied and their influences on TiO 2 nanotubes were investigated. The current density of anodizing was recorded by computer controlled digital multimeter. The surface morphology (top-view) of nanotube arrays were observed by SEM. The nanotube arrays in this study have inner diameters in range of 40-80 nm.

Investigation on the influence of electrode geometry on characteristics of coaxial dielectric barrier discharge reactor driven by an oscillating microsecond pulsed power supply

NASA Astrophysics Data System (ADS)

Miao, Chuanrun; Liu, Feng; Wang, Qian; Cai, Meiling; Fang, Zhi

2018-03-01

In this paper, an oscillating microsecond pulsed power supply with rise time of several tens of nanosecond (ns) is used to excite a coaxial DBD with double layer dielectric barriers. The effects of various electrode geometries by changing the size of inner quartz tube (different electrode gaps) on the discharge uniformity, power deposition, energy efficiency, and operation temperature are investigated by electrical, optical, and temperature diagnostics. The electrical parameters of the coaxial DBD are obtained from the measured applied voltage and current using an equivalent electrical model. The energy efficiency and the power deposition in air gap of coaxial DBD with various electrode geometries are also obtained with the obtained electrical parameters, and the heat loss and operation temperature are analyzed by a heat conduction model. It is found that at the same applied voltage, with the increasing of the air gap, the discharge uniformity becomes worse and the discharge power deposition and the energy efficiency decrease. At 2.5 mm air gap and 24 kV applied voltage, the energy efficiency of the coaxial DBD reaches the maximum value of 68.4%, and the power deposition in air gap is 23.6 W and the discharge uniformity is the best at this case. The corresponding operation temperature of the coaxial DBD reaches 64.3 °C after 900 s operation and the temperature of the inner dielectric barrier is 114.4 °C under thermal balance. The experimental results provide important experimental references and are important to optimize the design and the performance of coaxial DBD reactor.

An electrohydrodynamic technique for rapid mixing in stationary droplets on digital microfluidic platforms.

PubMed

Samiei, Ehsan; de Leon Derby, Maria Diaz; den Berg, Andre Van; Hoorfar, Mina

2017-01-17

This paper presents an electrohydrodynamic technique for rapid mixing of droplets in open and closed digital microfluidic (DMF) platforms. Mixing is performed by applying a high frequency AC voltage to the coplanar or parallel electrodes, inducing circulation zones inside the droplet which results in rapid mixing of the content. The advantages of the proposed method in comparison to conventional mixing methods that operate based on transporting the droplet back and forth and side to side include 1) a shorter mixing time (as fast as 0.25 s), 2) the use of a fewer number of electrodes, reducing the size of the chip, and 3) the stationary nature of the technique which reduces the chance of cross-contamination and surface biofouling. Mixing using the proposed method is performed to create a uniform mixture after merging a water droplet with another droplet containing either particles or dye. The results show that increasing the frequency, and or the amplitude of the applied voltage, enhances the mixing process. However, actuation with a very high frequency and voltage may result in shedding pico-liter satellite droplets. Therefore, for each frequency there is an effective range of the amplitude which provides rapid mixing and avoids shedding satellite droplets. Also, the increase in the gap height between the two plates (for the closed DMF platforms) significantly enhances the mixing efficiency due to the lower viscous effects. Effects of the addition of salts and DNA to the samples were also studied. The electrothermal effect decreased for these cases, which was solved by increasing the frequency of the applied voltage. To assure the high frequency actuation does not increase the sample temperature excessively, the temperature change was monitored using a thermal imaging camera and it was found that the increase in temperature is negligible.

Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

NASA Astrophysics Data System (ADS)

Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

2007-03-01

We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

Resolving an anomaly in electron temperature measurement using double and triple Langmuir probes

NASA Astrophysics Data System (ADS)

Ghosh, Soumen; Barada, K. K.; Chattopadhyay, P. K.; Ghosh, J.; Bora, D.

2015-02-01

Langmuir probes with variants such as single, double and triple probes remain the most common method of electron temperature measurement in low-temperature laboratory plasmas. However, proper estimation of electron temperature mainly using triple probe configuration requires the proper choice of compensation factor (W). Determination of the compensating factor is not very straightforward as it depends heavily on plasma floating potential (Vf), electron temperature (Te), the type of gas used for plasma production and the bias voltage applied to probe pins, especially in cases where there are substantial variations in floating potential. In this paper we highlight the anomaly in electron temperature measurement using double and triple Langmuir probe techniques as well as the proper determination of the compensation factor (W) to overcome this anomaly. Experiments are carried out with helicon antenna producing inductive radiofrequency plasmas, where significant variation of floating potential along the axis enables a detailed study of deviations introduced in Te measurements using triple probes compared to double and single probes. It is observed that the bias voltage between the probe pins of the triple probes plays an important role in the accurate determination of the compensating factor (W) and should be in the range (5Vd2 < Vd3 < 10Vd2), where Vd2 and Vd3 are the voltage between floating probe pins 2 and 1 and the bias voltage, respectively.

A 12 mV start-up converter using piezoelectric transformer for energy harvesting applications

NASA Astrophysics Data System (ADS)

Martinez, T.; Pillonnet, G.; Costa, F.

2016-11-01

This paper presents a novel topology of start-up converter for sub 100 mV thermal energy harvesting based on an Armstrong oscillator topology using a piezoelectric transformer (PT) and a normally-on MOSFET. Based on a Rosen-type PT and off-the-shelf components, the proposed startup topology begins to oscillate at 12 mV input voltage corresponding to a temperature gradient of 2°C and achieves 1 V output voltage with only 18 mV input voltage applied to the harvester.

Design and Implementation of Readout Circuit with Threshold Voltage Compensation on Glass Substrate for Touch Panel Applications

NASA Astrophysics Data System (ADS)

Lin, Yu-Ta; Ker, Ming-Dou; Wang, Tzu-Ming

2011-03-01

A new on-panel readout circuit with threshold voltage compensation for capacitive sensor in low temperature polycrystalline silicon (poly-Si) thin-film transistor (LTPS-TFT) process has been proposed. In order to compensate the threshold voltage variation from LTPS process variation, the proposed readout circuit applies a novel compensation approach with switch capacitor technique. In addition, a 4-bit analog-to-digital converter (ADC) is added to identify different sensed capacitor values and further enhances the overall resolution of touch panel.

Studies on transient characteristics of unipolar resistive switching processes in TiO2 thin film grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Sahu, Vikas Kumar; Das, Amit K.; Ajimsha, R. S.; Misra, P.

2018-05-01

The transient characteristics of resistive switching processes have been investigated in TiO2 thin films grown by atomic layer deposition (ALD) to study the temporal evolution of the switching processes and measure the switching times. The reset and set switching times of unipolar Au/TiO2/Pt devices were found to be ~250 µs and 180 ns, respectively in the voltage windows of 0.5–0.9 V for reset and 1.9–4.8 V for set switching processes, obtained from quasi-static measurements. The reset switching time decreased exponentially with increasing amplitude of applied reset voltage pulse, while the set switching time remained insensitive to the amplitude of the set voltage pulse. A fast reset process with a switching time of ~400 ns was achieved by applying a reset voltage of ~1.8 V, higher than that of the quasi-static reset voltage window but below the set voltage window. The sluggish reset process in TiO2 thin film and the dependence of the reset switching time on the amplitude of the applied voltage pulse was understood on the basis of a self-accelerated thermal dissolution model of conducting filaments (CFs), where a higher temperature of the CFs owing to enhanced Joule heating at a higher applied voltage imposes faster diffusion of oxygen vacancies, resulting in a shorter reset switching time. Our results clearly indicate that fast resistive switching with switching times in hundreds of nanoseconds can be achieved in ALD-grown TiO2 thin films. This may find applications in fast non-volatile unipolar resistive switching memories.

Substrate bias effect on the fabrication of thermochromic VO2 films by reactive RF sputtering

NASA Astrophysics Data System (ADS)

Miyazaki, H.; Yasui, I.

2006-05-01

Vanadium oxide VOx films were deposited by reactive RF magnetron sputtering by applying a substrate bias, in which the Ar ions in plasma impacted the growing film surface. The vanadium valence of the VOx film decreased when the substrate negative bias voltage was increased. The VO2 film was successfully deposited at a substrate temperature of 400 °C and with a bias voltage of -50 to -80 V. The transition temperatures of the VO2 films with a substrate bias of -50 and -80 V were about 56 °C and 44 °C, respectively.

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

NASA Astrophysics Data System (ADS)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

Fabrication and Characterization of Plasma Electrolytic Borocarburized Layers on Q235 Low-Carbon Steel at Different Discharge Voltages

NASA Astrophysics Data System (ADS)

Wang, Bin; Wu, Jie; Jin, Xiaoyue; Wu, Xiaoling; Wu, Zhenglong; Xue, Wenbin

The influence of applied voltage on the plasma electrolytic borocarburizing (PEB/C) layer of Q235 low-carbon steel in high-concentration borax solution was investigated. XRD and XPS spectra of PEB/C layer confirmed that the modified boride layer mainly consisted of Fe2B phase, and the FeB phase only exists in the loose top layer. The applied voltage on Q235 steel played a key role in determining the properties of hardened layers. The thickness and microhardness of boride layers increased with the increase of the applied voltage, which led to superior corrosion and wear resistances of Q235 low-carbon steel. The diffusion coefficient (D) of boride layer at 280, 300 and 330V increased with borocarburizing temperature and ranged from 0.062×10-12m2/s to 0.462×10-12m2/s. The activation energy (Q) of boride layer growth during PEB/C treatment was only 52.83kJṡmol-1, which was much lower than that of the conventional boriding process.

Sensing Properties of a Novel Temperature Sensor Based on Field Assisted Thermal Emission.

PubMed

Pan, Zhigang; Zhang, Yong; Cheng, Zhenzhen; Tong, Jiaming; Chen, Qiyu; Zhang, Jianpeng; Zhang, Jiaxiang; Li, Xin; Li, Yunjia

2017-02-27

The existing temperature sensors using carbon nanotubes (CNTs) are limited by low sensitivity, complicated processes, or dependence on microscopy to observe the experimental results. Here we report the fabrication and successful testing of an ionization temperature sensor featuring non-self-sustaining discharge. The sharp tips of nanotubes generate high electric fields at relatively low voltages, lowering the work function of electrons emitted by CNTs, and thereby enabling the safe operation of such sensors. Due to the temperature effect on the electron emission of CNTs, the collecting current exhibited an exponential increase with temperature rising from 20 °C to 100 °C. Additionally, a higher temperature coefficient of 0.04 K -1 was obtained at 24 V voltage applied on the extracting electrode, higher than the values of other reported CNT-based temperature sensors. The triple-electrode ionization temperature sensor is easy to fabricate and converts the temperature change directly into an electrical signal. It shows a high temperature coefficient and good application potential.

Sensing Properties of a Novel Temperature Sensor Based on Field Assisted Thermal Emission

PubMed Central

Pan, Zhigang; Zhang, Yong; Cheng, Zhenzhen; Tong, Jiaming; Chen, Qiyu; Zhang, Jianpeng; Zhang, Jiaxiang; Li, Xin; Li, Yunjia

2017-01-01

The existing temperature sensors using carbon nanotubes (CNTs) are limited by low sensitivity, complicated processes, or dependence on microscopy to observe the experimental results. Here we report the fabrication and successful testing of an ionization temperature sensor featuring non-self-sustaining discharge. The sharp tips of nanotubes generate high electric fields at relatively low voltages, lowering the work function of electrons emitted by CNTs, and thereby enabling the safe operation of such sensors. Due to the temperature effect on the electron emission of CNTs, the collecting current exhibited an exponential increase with temperature rising from 20 °C to 100 °C. Additionally, a higher temperature coefficient of 0.04 K−1 was obtained at 24 V voltage applied on the extracting electrode, higher than the values of other reported CNT-based temperature sensors. The triple-electrode ionization temperature sensor is easy to fabricate and converts the temperature change directly into an electrical signal. It shows a high temperature coefficient and good application potential. PMID:28264427

Non-invasive probe diagnostic method for electron temperature and ion current density in atmospheric pressure plasma jet source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Young-Cheol; Kim, Yu-Sin; Lee, Hyo-Chang

2015-08-15

The electrical probe diagnostics are very hard to be applied to atmospheric plasmas due to severe perturbation by the electrical probes. To overcome this, the probe for measuring electron temperature and ion current density is indirectly contacted with an atmospheric jet source. The plasma parameters are obtained by using floating harmonic analysis. The probe is mounted on the quartz tube that surrounds plasma. When a sinusoidal voltage is applied to a probe contacting on a quartz tube, the electrons near the sheath at dielectric tube are collected and the probe current has harmonic components due to probe sheath nonlinearity. Frommore » the relation of the harmonic currents and amplitude of the sheath voltage, the electron temperature near the wall can be obtained with collisional sheath model. The electron temperatures and ion current densities measured at the discharge region are in the ranges of 2.7–3.4 eV and 1.7–5.2 mA/cm{sup 2} at various flow rates and input powers.« less

Very Low Frequency Breakdown Properties of Electrical Insulation Materials at Cryogenic Temperatures

NASA Astrophysics Data System (ADS)

Sauers, I.; Tuncer, E.; Polizos, G.; James, D. R.; Ellis, A. R.; Pace, M. O.

2010-04-01

For long cables or equipment with large capacitance it is not always possible to conduct high voltage withstand tests at 60 Hz due to limitations in charging currents of the power supply. Very low frequency (typically at a frequency of 0.1 Hz) has been used for conventional cables as a way of getting around the charging current limitation. For superconducting grid applications the same issues apply. However there is very little data at cryogenic temperatures on how materials perform at low frequency compared to 60 Hz and whether higher voltages should be applied when performing a high voltage acceptability test. Various materials including G10 (fiberglass reinforced plastic or FRP), Cryoflex™ (a tape insulation used in some high temperature superconducting cables), kapton (commonly used polyimide), polycarbonate, and polyetherimide, and in liquid nitrogen alone have been tested using a step method for frequencies of 60 Hz, 0.1 Hz, and dc. The dwell time at each step was chosen so that the aging factor would be the same in both the 60 Hz and 0.1 Hz tests. The data indicated that, while there is a small frequency dependence for liquid nitrogen, there are significant differences for the solid materials studied. Breakdown data for these materials and for model cables will be shown and discussed.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel

2016-01-14

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current inmore » doped Ge{sub 2}Sb{sub 2}Te{sub 5} nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.« less

Planar LTCC transformers for high voltage flyback converters.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schofield, Daryl; Schare, Joshua M.; Glass, Sarah Jill

This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstratedmore » LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.« less

Small Cold Temperature Instrument Packages

NASA Astrophysics Data System (ADS)

Clark, P. E.; Millar, P. S.; Yeh, P. S.; Feng, S.; Brigham, D.; Beaman, B.

We are developing a small cold temperature instrument package concept that integrates a cold temperature power system with ultra low temperature ultra low power electronics components and power supplies now under development into a 'cold temperature surface operational' version of a planetary surface instrument package. We are already in the process of developing a lower power lower temperature version for an instrument of mutual interest to SMD and ESMD to support the search for volatiles (the mass spectrometer VAPoR, Volatile Analysis by Pyrolysis of Regolith) both as a stand alone instrument and as part of an environmental monitoring package. We build on our previous work to develop strategies for incorporating Ultra Low Temperature/Ultra Low Power (ULT/ULP) electronics, lower voltage power supplies, as well as innovative thermal design concepts for instrument packages. Cryotesting has indicated that our small Si RHBD CMOS chips can deliver >80% of room temperature performance at 40K (nominal minimum lunar surface temperature). We leverage collaborations, past and current, with the JPL battery development program to increase power system efficiency in extreme environments. We harness advances in MOSFET technology that provide lower voltage thresholds for power switching circuits incorporated into our low voltage power supply concept. Conventional power conversion has a lower efficiency. Our low power circuit concept based on 'synchronous rectification' could produce stable voltages as low as 0.6 V with 85% efficiency. Our distributed micro-battery-based power supply concept incorporates cold temperature power supplies operating with a 4 V or 8 V battery. This work will allow us to provide guidelines for applying the low temperature, low power system approaches generically to the widest range of surface instruments.

Device and method for measuring the coefficient of performance of a heat pump

DOEpatents

Brantley, Vanston R.; Miller, Donald R.

1984-01-01

A method and instrument is provided which allows quick and accurate measurement of the coefficient of performance of an installed electrically powered heat pump including auxiliary resistance heaters. Temperature sensitive resistors are placed in the return and supply air ducts to measure the temperature increase of the air across the refrigerant and resistive heating elements of the system. The voltages across the resistors which are directly proportional to the respective duct temperatures are applied to the inputs of a differential amplifier so that its output voltage is proportional to the temperature difference across the unit. A voltage-to-frequency converter connected to the output of the differential amplifier converts the voltage signal to a proportional frequency signal. A digital watt meter is used to measure the power to the unit and produces a signal having a frequency proportional to the input power. A digital logic circuit ratios the temperature difference signal and the electric power input signal in a unique manner to produce a single number which is the coefficient of performance of the unit over the test interval. The digital logic and an in-situ calibration procedure enables the instrument to make these measurements in such a way that the ratio of heat flow/power input is obtained without computations. No specialized knowledge of thermodynamics or electronics is required to operate the instrument.

Electric field induced metal-insulator transition in VO2 thin film based on FTO/VO2/FTO structure

NASA Astrophysics Data System (ADS)

Hao, Rulong; Li, Yi; Liu, Fei; Sun, Yao; Tang, Jiayin; Chen, Peizu; Jiang, Wei; Wu, Zhengyi; Xu, Tingting; Fang, Baoying

2016-03-01

A VO2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO2 (FTO) conductive glass substrate. The FTO/VO2/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I-V hysteresis loop for the FTO/VO2/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO2/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.

Systematic error of diode thermometer.

PubMed

Iskrenovic, Predrag S

2009-08-01

Semiconductor diodes are often used for measuring temperatures. The forward voltage across a diode decreases, approximately linearly, with the increase in temperature. The applied method is mainly the simplest one. A constant direct current flows through the diode, and voltage is measured at diode terminals. The direct current that flows through the diode, putting it into operating mode, heats up the diode. The increase in temperature of the diode-sensor, i.e., the systematic error due to self-heating, depends on the intensity of current predominantly and also on other factors. The results of systematic error measurements due to heating up by the forward-bias current have been presented in this paper. The measurements were made at several diodes over a wide range of bias current intensity.

High-conductance low-voltage organic thin film transistor with locally rearranged poly(3-hexylthiophene) domain by current annealing on plastic substrate

NASA Astrophysics Data System (ADS)

Pei, Zingway; Tsai, Hsing-Wang; Lai, Hsin-Cheng

2016-02-01

The organic material based thin film transistors (TFTs) are attractive for flexible optoelectronics applications due to the ability of lager area fabrication by solution and low temperature process on plastic substrate. Recently, the research of organic TFT focus on low operation voltage and high output current to achieve a low power organic logic circuit for optoelectronic device,such as e-paper or OLED displayer. To obtain low voltage and high output current, high gate capacitance and high channel mobility are key factors. The well-arranged polymer chain by a high temperature postannealing, leading enhancement conductivity of polymer film was a general method. However, the thermal annealing applying heat for all device on the substrate and may not applicable to plastic substrate. Therefore, in this work, the low operation voltage and high output current of polymer TFTs was demonstrated by locally electrical bias annealing. The poly(styrene-comethyl methacrylate) (PS-r-PMMA) with ultra-thin thickness is used as gate dielectric that the thickness is controlled by thermal treatment after spin coated on organic electrode. In electrical bias-annealing process, the PS-r- PMMA is acted a heating layer. After electrical bias-annealing, the polymer TFTs obtain high channel mobility at low voltage that lead high output current by a locally annealing of P3HT film. In the future, the locally electrical biasannealing method could be applied on plastic substrate for flexible optoelectronic application.

Carbon nanotube vacuum gauges with wide-dynamic range and processes thereof

NASA Technical Reports Server (NTRS)

Manohara, Harish (Inventor); Kaul, Anupama B. (Inventor)

2013-01-01

A miniature thermal conductivity gauge employs a carbon single-walled-nanotube. The gauge operates on the principle of thermal exchange between the voltage-biased nanotube and the surrounding gas at low levels of power and low temperatures to measure vacuum across a wide dynamic range. The gauge includes two terminals, a source of constant voltage to the terminals, a single-walled carbon nanotube between the terminals, a calibration of measured conductance of the nanotube to magnitudes of surrounding vacuum and a current meter in electrical communication with the source of constant voltage. Employment of the nanotube for measuring vacuum includes calibrating the electrical conductance of the nanotube to magnitudes of vacuum, exposing the nanotube to a vacuum, applying a constant voltage across the nanotube, measuring the electrical conductance of the nanotube in the vacuum with the constant voltage applied and converting the measured electrical conductance to the corresponding calibrated magnitude of vacuum using the calibration. The nanotube may be suspended to minimize heat dissipation through the substrate, increasing sensitivity at even tower pressures.

Apparatus and Method for Compensating for Process, Voltage, and Temperature Variation of the Time Delay of a Digital Delay Line

NASA Technical Reports Server (NTRS)

Seefeldt, James (Inventor); Feng, Xiaoxin (Inventor); Roper, Weston (Inventor)

2013-01-01

A process, voltage, and temperature (PVT) compensation circuit and a method of continuously generating a delay measure are provided. The compensation circuit includes two delay lines, each delay line providing a delay output. The two delay lines may each include a number of delay elements, which in turn may include one or more current-starved inverters. The number of delay lines may differ between the two delay lines. The delay outputs are provided to a combining circuit that determines an offset pulse based on the two delay outputs and then averages the voltage of the offset pulse to determine a delay measure. The delay measure may be one or more currents or voltages indicating an amount of PVT compensation to apply to input or output signals of an application circuit, such as a memory-bus driver, dynamic random access memory (DRAM), a synchronous DRAM, a processor or other clocked circuit.

A Flexible Three-in-One Microsensor for Real-Time Monitoring of Internal Temperature, Voltage and Current of Lithium Batteries.

PubMed

Lee, Chi-Yuan; Peng, Huan-Chih; Lee, Shuo-Jen; Hung, I-Ming; Hsieh, Chien-Te; Chiou, Chuan-Sheng; Chang, Yu-Ming; Huang, Yen-Pu

2015-05-19

Lithium batteries are widely used in notebook computers, mobile phones, 3C electronic products, and electric vehicles. However, under a high charge/discharge rate, the internal temperature of lithium battery may rise sharply, thus causing safety problems. On the other hand, when the lithium battery is overcharged, the voltage and current may be affected, resulting in battery instability. This study applies the micro-electro-mechanical systems (MEMS) technology on a flexible substrate, and develops a flexible three-in-one microsensor that can withstand the internal harsh environment of a lithium battery and instantly measure the internal temperature, voltage and current of the battery. Then, the internal information can be fed back to the outside in advance for the purpose of safety management without damaging the lithium battery structure. The proposed flexible three-in-one microsensor should prove helpful for the improvement of lithium battery design or material development in the future.

Voltage-induced switching dynamics based on an AZO/VO2/AZO sandwiched structure

NASA Astrophysics Data System (ADS)

Xiao, Han; Li, Yi; Fang, Baoying; Wang, Xiaohua; Liu, Zhimin; Zhang, Jiao; Li, Zhengpeng; Huang, Yaqin; Pei, Jiangheng

2017-11-01

A vanadium dioxide (VO2) thin film was prepared on an Al-doped ZnO (AZO) conductive glass substrate by DC magnetron sputtering and a post-annealing process. The AZO/VO2/AZO sandwiched structure was fabricated on the VO2/AZO composite film using photolithography and a chemical etching process. The composition, microstructure and optical properties of the VO2/AZO composite film were tested. The results showed that the VO2/AZO composite film was poly-crystalline and the AZO layer did not change the preferred growth orientation of VO2. When the voltage was applied on both of the transparent conductive layers of the AZO/VO2/AZO sandwiched structure, an abrupt change in the current was observed at different temperatures. The temperature dependence of I-V characteristic curves for the AZO/VO2/AZO sandwiched structure was analyzed. The phase transition voltage value is 7.5 V at 20 °C and decreases with increasing temperature.

Zero bias conductance peak in InAs nanowire coupled to superconducting electrodes

NASA Astrophysics Data System (ADS)

Kim, Nam-Hee; Shin, Yun-Sok; Kim, Hong-Seok; Song, Jin-Dong; Doh, Yong-Joo

2018-04-01

We report the occurrence of the zero-bias conductance peak (ZBCP) in an InAs nanowire coupled to PbIn superconductors with varying temperature, bias voltage, and magnetic field. The ZBCP is suppressed with increasing temperature and bias voltage above the Thouless energy of the nanowire. Applying a magnetic field also diminishes the ZBCP when the resultant magnetic flux reaches the magnetic flux quantum h/2e. Our observations are consistent with theoretical expectations of reflectionless tunneling, in which the phase coherence between an electron and its Andreev-reflected hole induces the ZBCP as long as time-reversal symmetry is preserved.

Hybrid pulse anodization for the fabrication of porous anodic alumina films from commercial purity (99%) aluminum at room temperature.

PubMed

Chung, C K; Zhou, R X; Liu, T Y; Chang, W T

2009-02-04

Most porous anodic alumina (PAA) or anodic aluminum oxide (AAO) films are fabricated using the potentiostatic method from high-purity (99.999%) aluminum films at a low temperature of approximately 0-10 degrees C to avoid dissolution effects at room temperature (RT). In this study, we have demonstrated the fabrication of PAA film from commercial purity (99%) aluminum at RT using a hybrid pulse technique which combines pulse reverse and pulse voltages for the two-step anodization. The reaction mechanism is investigated by the real-time monitoring of current. A possible mechanism of hybrid pulse anodization is proposed for the formation of pronounced nanoporous film at RT. The structure and morphology of the anodic films were greatly influenced by the duration of anodization and the type of voltage. The best result was obtained by first applying pulse reverse voltage and then pulse voltage. The first pulse reverse anodization step was used to form new small cells and pre-texture concave aluminum as a self-assembled mask while the second pulse anodization step was for the resulting PAA film. The diameter of the nanopores in the arrays could reach 30-60 nm.

Carrier velocity effect on carbon nanotube Schottky contact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fathi, Amir, E-mail: fathi.amir@hotmail.com; Ahmadi, M. T., E-mail: mt.ahmadi@urmia.ac.ir; Ismail, Razali, E-mail: Razali@fke.utm.my

One of the most important drawbacks which caused the silicon based technologies to their technical limitations is the instability of their products at nano-level. On the other side, carbon based materials such as carbon nanotube (CNT) as alternative materials have been involved in scientific efforts. Some of the important advantages of CNTs over silicon components are high mechanical strength, high sensing capability and large surface-to-volume ratio. In this article, the model of CNT Schottky transistor current which is under exterior applied voltage is employed. This model shows that its current has a weak dependence on thermal velocity corresponding to themore » small applied voltage. The conditions are quite different for high bias voltages which are independent of temperature. Our results indicate that the current is increased by Fermi velocity, but the I–V curves will not have considerable changes with the variations in number of carriers. It means that the current doesn’t increase sharply by voltage variations over different number of carriers.« less

Preparation of nanocomposites resin from seed Pterodon emarginatus doped maghemite nanoparticles.

PubMed

Silveira, L B; Martins, Q S; Maia, J C; Santos, J G

2012-06-01

Electrical characterization and magnetic nanocomposite resin seeds Pterodon emarginatus (PE) doped with nanoparticles of maghemite and treated by different chemical processes is reported in this paper. The pure PE resin showed semiconducting characteristics probably the presence of natural iron oxide in its molecular structure. The analysis of Mössbauer spectra pure resin showed two magnetic sites presented on measurements made at temperature of 300 K. Six "LEDs" to have been doped maghemite nanoparticles forming concentrations of 2.6 x 10(15) to 1.56 x 10(16) particles/cm2 forming the LED-PEMN. In the presence of the applied current versus voltage (0 to 0.9 V) LED-PEMN shown semiconducting properties. In the presence of frequency versus voltage sample of pure resin and LED features small decrease. While samples of LED-PEMN suffers loss frequency linearly with concentration and voltage. The pure PE resin shows high resistance to the applied voltage while the LED-PEMN is observed linear increase with the strength and concentration of nanoparticles of maghemite.

Spin-dependent electrical conduction in a pentacene Schottky diode explored by electrically detected magnetic resonance

NASA Astrophysics Data System (ADS)

Fukuda, Kunito; Asakawa, Naoki

2017-02-01

Reported is the observation of dark spin-dependent electrical conduction in a Schottky barrier diode with pentacene (PSBD) using electrically detected magnetic resonance at room temperature. It is suggested that spin-dependent conduction exists in pentacene thin films, which is explored by examining the anisotropic linewidth of the EDMR signal and current density-voltage (J-V) measurements. The EDMR spectrum can be decomposed to Gaussian and Lorentzian components. The dependency of the two signals on the applied voltage was consistent with the current density-voltage (J-V) of the PSBD rather than that of the electron-only device of Al/pentacene/Al, indicating that the spin-dependent conduction is due to bipolaron formation associated with hole polaronic hopping processes. The applied-voltage dependence of the ratio of intensity of the Gaussian line to the Lorentzian may infer that increasing current density should make conducting paths more dispersive, thereby resulting in an increased fraction of the Gaussian line due to the higher dispersive g-factor.

Treating of solid earthen material and a method for measuring moisture content and resistivity of solid earthen material

DOEpatents

Heath, William; Richardson, Richard; Goheen, Steven

1994-01-01

The present invention includes a method of treating solid earthen material having volatile, semi-volatile and non-volatile contaminants. Six electrodes are inserted into a region of earthen material to be treated in a substantially equilateral hexagonal arrangement. Six phases of voltages are applied to corresponding electrodes. The voltages are adjusted within a first range of voltages to create multiple current paths between pairs of the electrodes. The current paths are evenly distributed throughout the region defined by the electrodes and therefore uniformly heat the region. The region of earthen material is heated to a temperature sufficient to substantially remove volatile and semi-volatile contaminants. This temperature is less than a melting temperature of the earthen material. The voltages are then increased to a second range of voltages effective to create dry regions around the electrodes. The dry regions have a perimeter which define a boundary between the dry regions and the earthen material exterior to the dry regions. Corona discharge occurs at the boundaries of the dry regions. As voltages are increased further, the dry regions move radially outward from the electrodes through the entire region. The corona boundaries decompose the non-volatilized contaminants remaining in the region. The hexagonal arrangement of electrodes is also preferable for measuring resistivity and moisture content of the earthen material. The electric field created between the electrodes is readily discernable and therefore facilitates accurate measurements.

Impact of Reflow on the Output Characteristics of Piezoelectric Microelectromechanical System Devices

NASA Astrophysics Data System (ADS)

Nogami, Hirofumi; Kobayashi, Takeshi; Okada, Hironao; Masuda, Takashi; Maeda, Ryutaro; Itoh, Toshihiro

2012-09-01

An animal health monitoring system and a wireless sensor node aimed at preventing the spread of animal-transmitted diseases and improving pastoral efficiency which are especially suitable for chickens, were developed. The sensor node uses a piezoelectric microelectromechanical system (MEMS) device and an event-driven system that is activated by the movements of a chicken. The piezoelectric MEMS device has two functions: a) it measures the activity of a chicken and b) switches the micro-control unit (MCU) of the wireless sensor node from the sleep mode. The piezoelectric MEMS device is required to produce high output voltages when the chicken moves. However, after the piezoelectric MEMS device was reflowed to the wireless sensor node, the output voltages of the piezoelectric MEMS device decreased. The main reason for this might be the loss of residual polarization, which is affected by the thermal load during the reflow process. After the reflow process, we were not able to apply a voltage to the piezoelectric MEMS device; thus, the piezoelectric output voltage was not increased by repoling the piezoelectric MEMS device. To address the thermal load of the reflow process, we established a thermal poling treatment, which achieves a higher temperature than the reflow process. We found that on increasing the thermal poling temperature, the piezoelectric output voltages did not decreased low significantly. Thus, we considered that a thermal poling temperature higher than that of the reflow process prevents the piezoelectric output voltage reduction caused by the thermal load.

Effect of Embedded Pd Microstructures on the Flat-Band-Voltage Operation of Room Temperature ZnO-Based Liquid Petroleum Gas Sensors

PubMed Central

Ali, Ghusoon M.; Thompson, Cody V.; Jasim, Ali K.; Abdulbaqi, Isam M.; Moore, James C.

2013-01-01

Three methods were used to fabricate ZnO-based room temperature liquid petroleum gas (LPG) sensors having interdigitated metal-semiconductor-metal (MSM) structures. Specifically, devices with Pd Schottky contacts were fabricated with: (1) un-doped ZnO active layers; (2) Pd-doped ZnO active layers; and (3) un-doped ZnO layers on top of Pd microstructure arrays. All ZnO films were grown on p-type Si(111) substrates by the sol-gel method. For devices incorporating a microstructure array, Pd islands were first grown on the substrate by thermal evaporation using a 100 μm mesh shadow mask. We have estimated the sensitivity of the sensors for applied voltage from –5 to 5 V in air ambient, as well as with exposure to LPG in concentrations from 500 to 3,500 ppm at room temperature (300 K). The current-voltage characteristics were studied and parameters such as leakage current, barrier height, reach-through voltage, and flat-band voltage were extracted. We include contributions due to the barrier height dependence on the electric field and tunneling through the barrier for the studied MSM devices. The Pd-enhanced devices demonstrated a maximum gas response at flat-band voltages. The study also revealed that active layers consisting of Pd microstructure embedded ZnO films resulted in devices exhibiting greater gas-response as compared to those using Pd-doped ZnO thin films or un-doped active layers.

Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

PubMed Central

Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

2015-01-01

This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A·dm−2 and 3 A·dm−2 for creating aluminium oxide layer. PMID:25922850

Usage of neural network to predict aluminium oxide layer thickness.

PubMed

Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

2015-01-01

This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A · dm(-2) and 3 A · dm(-2) for creating aluminium oxide layer.

Inverted Fuel Cell: Room-Temperature Hydrogen Separation from an Exhaust Gas by Using a Commercial Short-Circuited PEM Fuel Cell without Applying any Electrical Voltage.

PubMed

Friebe, Sebastian; Geppert, Benjamin; Caro, Jürgen

2015-06-26

A short-circuited PEM fuel cell with a Nafion membrane has been evaluated in the room-temperature separation of hydrogen from exhaust gas streams. The separated hydrogen can be recovered or consumed in an in situ olefin hydrogenation when the fuel cell is operated as catalytic membrane reactor. Without applying an outer electrical voltage, there is a continuous hydrogen flux from the higher to the lower hydrogen partial pressure side through the Nafion membrane. On the feed side of the Nafion membrane, hydrogen is catalytically split into protons and electrons by the Pt/C electrocatalyst. The protons diffuse through the Nafion membrane, the electrons follow the short-circuit between the two brass current collectors. On the cathode side, protons and electrons recombine, and hydrogen is released. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of DC bias on dielectric properties of nanocrystalline CuAlO2

NASA Astrophysics Data System (ADS)

Prakash, T.; Ramasamy, S.; Murty, B. S.

2013-03-01

Grain boundary effect on the room temperature dielectric behavior in mechanically alloyed nanocrystalline CuAlO2 has been investigated using impedance spectroscopy under the applied DC bias voltages 0 V to 4.8 V in a periodic interval of 0.2 V. Analysis of impedance data confirms the existence of double Schottky potential barrier heights ( Φ b ) between two adjacent grains (left and right side) with grain boundary and its influences in dielectric relaxation time ( τ), dielectric constant ( ɛ') and dielectric loss (tan δ) factor. Also, clear evidence on the suppression of Φ b was demonstrated in the higher applied bias voltages with the parameter τ. At equilibrium state, τ is 0.63 ms and it was reduced to 0.13 ms after the 3.2 V applied DC bias. These observed DC bias voltage effects are obeying `brick layer model' and also elucidates Φ b is playing a crucial role in controlling dielectric properties of nanomaterials.

Electrical conduction hysteresis in carbon black-filled butyl rubber compounds

NASA Astrophysics Data System (ADS)

Alzamil, M. A.; Alfaramawi, K.; Abboudy, S.; Abulnasr, L.

2018-04-01

Temperature and concentration dependence of electrical resistance of butyl rubber filled with GPF carbon black was carried out. Current-voltage (I-V) characteristics at room-temperature were also investigated. The I-V characteristics show that the behavior is linear at small voltages up to approximately 0.15 V and currents up to 0.05 mA indicating that the conduction mechanism was probably due to electron tunneling from the end of conductive path to the other one under the action of the applied electric field. At higher voltages, a nonlinear behavior was noticed. The nonlinearity was attributed to the joule heating effects. Electrical resistance of the butyl/GPF composites was measured as a function of temperature during heating and cooling cycles from 300 K and upward to a specific temperature. When the specimens were heated up, the resistance was observed to increase continuously with the rise of temperature. However, when the samples were cooled down, the resistance was observed to decrease following a different path. The presence of conduction hysteresis behavior in the resistance-temperature curves during the heating and cooling cycles was then verified. The electrical conduction of the composite system is supposed to follow an activation conduction mechanism. Activation energy was calculated at different filler concentrations for both the heating and cooling processes.

Protection of Electrical Systems from EM Hazards - Design Guide.

DTIC Science & Technology

1981-09-01

cm) Surface flashover Voltage (KV/cm) This criterion should be met for lighting voltage stresses of either polarity applied at up to 1000 KV/v sec rate...suppressor devices can be predicted. The part failure rate models in the handbook include the effects of part electrical stress , thermal stress , operating... stress . This test series contained over one million device hours of operation at temperatures uF to 145°C. The average duration of testing ranges from

Application of ESP for gas cleaning in cement industry--with reference to India.

PubMed

Bapat, J D

2001-02-16

Electrostatic precipitators (ESP) are used for gas cleaning in almost every section of cement manufacture. Application of ESP is studied, keeping in view Indian conditions. The characterisation of dust emissions has been done for different units, such as rotary kiln and raw mill, alkali by-pass, clinker cooler, cement and coal mill, in terms of exit gas quantity, temperature, dew point, dust content and particle size. It is seen that all these characteristics have a wide range of variance. The ESP system must effectively deal with these variations. The fundamental analytical expression governing the performance of ESP, i.e. the Deutsch equation, and that for particle migration velocity, were analysed to predict the effect of major operating parameters, namely particle size, temperature and applied voltage. Whereas the migration velocity (and the efficiency) varies directly with the particle size, it is proportional to the square and square root of applied voltage and absolute temperature of the gas, respectively. The increase in efficiency due to temperature is not seen in dc based ESP, perhaps due to more pronounced negative effect on the applied voltage due to the increase in dust resistivity at higher temperatures. The effect of gas and dust characteristics on the collection efficiency of ESP, as seen in the industrial practice, is summarised. Some main process and design improvements effectively dealing with the problem of gas and dust characteristics have been discussed. These are gas conditioning, pulse energization, ESP-fabric filter (FF) combination, improved horizontal flow as well as open top ESP.Generally, gas conditioning entails higher operating and maintenance costs. Pulse energization allows the use of hot gas, besides reducing the dust emission and power consumption. The improved horizontal flow ESP has been successfully used in coal dust cleaning. The open top or vertical flow ESP has a limitation on collection efficiency as it provides for only one electric field.

Morphology effect on the light scattering and dynamic response of polymer network liquid crystal phase modulator.

PubMed

Xiangjie, Zhao; Cangli, Liu; Jiazhu, Duan; Jiancheng, Zeng; Dayong, Zhang; Yongquan, Luo

2014-06-16

Polymer network liquid crystal (PNLC) was one of the most potential liquid crystal for submillisecond response phase modulation, which was possible to be applied in submillisecond response phase only spatial light modulator. But until now the light scattering when liquid crystal director was reoriented by external electric field limited its phase modulation application. Dynamic response of phase change when high voltage was applied was also not elucidated. The mechanism that determines the light scattering was studied by analyzing the polymer network morphology by SEM method. Samples were prepared by varying the polymerization temperature, UV curing intensity and polymerization time. The morphology effect on the dynamic response of phase change was studied, in which high voltage was usually applied and electro-striction effect was often induced. The experimental results indicate that the polymer network morphology was mainly characterized by cross linked single fibrils, cross linked fibril bundles or even both. Although the formation of fibril bundle usually induced large light scattering, such a polymer network could endure higher voltage. In contrast, although the formation of cross linked single fibrils induced small light scattering, such a polymer network cannot endure higher voltage. There is a tradeoff between the light scattering and high voltage endurance. The electro-optical properties such as threshold voltage and response time were taken to verify our conclusion. For future application, the monomer molecular structure, the liquid crystal solvent and the polymerization conditions should be optimized to generate optimal polymer network morphology.

c-Axis oriented epitaxial Ba 0.25Sr 0.75TiO 3 films display Curie-Weiss behavior

NASA Astrophysics Data System (ADS)

Boikov, Yu. A.; Claeson, T.

2002-02-01

Thin films of ferroelectrics have inferior dielectric properties, including microwave losses, compared to bulk material and generally do not display a proper Curie-Weiss behavior. This study shows that the film properties can be improved considerably, with a Curie-Weiss behavior, by choosing lattice matched electrodes and proper stoichiometry. A 700 nm thick Ba 0.25Sr 0.75TiO 3 layer was inserted, by laser ablation, between two epitaxial metallic oxide (200 nm) SrRuO 3 electrodes. Because of compressive stress in the plane of the substrate, the c-axis of the unit cell in the Ba 0.25Sr 0.75TiO 3 layer was normal to the substrate plane. Grains were of the order of 100-200 nm (with small misorientation angles in a× b plane) as determined by X-rays and AFM. The positions of pronounced maxima in the temperature dependence of the permittivity depended on external bias voltage applied between the SrRuO 3 electrodes to the dielectric film. The measured ε( T) curves agreed well with existing theoretical models at temperatures below and above the ferroelectric phase transition point. At T≈200 K, ε/ ε0 for the Ba 0.25Sr 0.75TiO 3 layer was suppressed up to 85% (from 4400 down to 560) when ±2.5 V bias voltage was applied to the metallic oxide electrodes. Well saturated polarization-vs.-voltage hysteresis loops were measured for the Ba 0.25Sr 0.75TiO 3 layer in the temperature interval 4.2-200 K. Because of depolarization effects, the polarization of the Ba 0.25Sr 0.75TiO 3 layer was suppressed at positive voltage applied between the electrodes, as compared with a negative one.

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

NASA Astrophysics Data System (ADS)

El-Masry, N. A.; Zavada, J. M.; Reynolds, J. G.; Reynolds, C. L.; Liu, Z.; Bedair, S. M.

2017-08-01

We have demonstrated a room temperature dilute magnetic semiconductor based on GaCrN epitaxial layers grown by metalorganic chemical vapor deposition. Saturation magnetization Ms increased when the GaCrN film is incorporated into a (p-GaN/i-GaCrN/n-GaN) device structure, due to the proximity of mediated holes present in the p-GaN layer. Zero field cooling and field cooling were measured to ascertain the absence of superparamagnetic behavior in the films. A (p-GaN/i-GaCrN/n-GaN) device structure with room temperature ferromagnetic (FM) properties that can be controlled by an external applied voltage has been fabricated. In this work, we show that the applied voltage controls the ferromagnetic properties, by biasing the (p-i-n) structure. With forward bias, ferromagnetism in the GaCrN layer was increased nearly 4 fold of the original value. Such an enhancement is due to carrier injection of holes into the Cr deep level present in the i-GaCrN layer. A "memory effect" for the FM behavior of the (p-i-n) GaCrN device structure persisted for 42 h after the voltage bias was turned off. These measurements also support that the observed ferromagnetism in the GaCrN film is not due to superparamagnetic clusters but instead is a hole-mediated phenomenon.

Transport spectroscopy of induced superconductivity in the three-dimensional topological insulator HgTe

NASA Astrophysics Data System (ADS)

Wiedenmann, Jonas; Liebhaber, Eva; Kübert, Johannes; Bocquillon, Erwann; Burset, Pablo; Ames, Christopher; Buhmann, Hartmut; Klapwijk, Teun M.; Molenkamp, Laurens W.

2017-10-01

The proximity-induced superconducting state in the three-dimensional topological insulator HgTe has been studied using electronic transport of a normal metal-superconducting point contact as a spectroscopic tool (Andreev point-contact spectroscopy). By analyzing the conductance as a function of voltage for various temperatures, magnetic fields, and gate voltages, we find evidence, in equilibrium, for an induced order parameter in HgTe of 70 µeV and a niobium order parameter of 1.1 meV. To understand the full conductance curve as a function of applied voltage we suggest a non-equilibrium-driven transformation of the quantum transport process where the relevant scattering region and equilibrium reservoirs change with voltage. This change implies that the spectroscopy probes the superconducting correlations at different positions in the sample, depending on the bias voltage.

Fire protection system HMI in power plant

NASA Astrophysics Data System (ADS)

Zainal, Yuda Bakti

2015-05-01

The central power station, a place where there are machines that generate power, equipped with substation where the voltage is produced by the generator and increased to a certain voltage with a step up voltage transformer. Effect on transformer oil is very important, transformer may malfunction if the oil that serves as a coolant and insulator gradually decreased its ability, over time their use. Power transformer on usability is vital, so it needs to be maintained so that the temperature rise must be overcome by applying a temperature control that can inform and control the control valve to open the hydrant tap transformer cooling. HMI implemented to facilitate the operators cope with excess heat in the transformer using thermocouple censor. Test results show that the control transformer and monitored using PLC and HMI. Transformer can maintain the condition of a maximum of 80 degrees Celsius heat.

Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

NASA Astrophysics Data System (ADS)

Jehl, Zacharie; Suchet, Daniel; Julian, Anatole; Bernard, Cyril; Miyashita, Naoya; Gibelli, Francois; Okada, Yoshitaka; Guillemolles, Jean-Francois

2017-02-01

Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

Analysis performance of proton exchange membrane fuel cell (PEMFC)

NASA Astrophysics Data System (ADS)

Mubin, A. N. A.; Bahrom, M. H.; Azri, M.; Ibrahim, Z.; Rahim, N. A.; Raihan, S. R. S.

2017-06-01

Recently, the proton exchange membrane fuel cell (PEMFC) has gained much attention to the technology of renewable energy due to its mechanically ideal and zero emission power source. PEMFC performance reflects from the surroundings such as temperature and pressure. This paper presents an analysis of the performance of the PEMFC by developing the mathematical thermodynamic modelling using Matlab/Simulink. Apart from that, the differential equation of the thermodynamic model of the PEMFC is used to explain the contribution of heat to the performance of the output voltage of the PEMFC. On the other hand, the partial pressure equation of the hydrogen is included in the PEMFC mathematical modeling to study the PEMFC voltage behaviour related to the input variable input hydrogen pressure. The efficiency of the model is 33.8% which calculated by applying the energy conversion device equations on the thermal efficiency. PEMFC’s voltage output performance is increased by increasing the hydrogen input pressure and temperature.

A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature.

PubMed

Liu, Guanxiong; Debnath, Bishwajit; Pope, Timothy R; Salguero, Tina T; Lake, Roger K; Balandin, Alexander A

2016-10-01

The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, including 1T-TaSe 2 , 1T-TaS 2 and 1T-TiSe 2 exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by the environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here, we demonstrate room-temperature current switching driven by a voltage-controlled phase transition between CDW states in films of 1T-TaS 2 less than 10 nm thick. We exploit the transition between the nearly commensurate and the incommensurate CDW phases, which has a transition temperature of 350 K and gives an abrupt change in current accompanied by hysteresis. An integrated graphene transistor provides a voltage-tunable, matched, low-resistance load enabling precise voltage control of the circuit. The 1T-TaS 2 film is capped with hexagonal boron nitride to provide protection from oxidation. The integration of these three disparate 2D materials in a way that exploits the unique properties of each yields a simple, miniaturized, voltage-controlled oscillator suitable for a variety of practical applications.

Device and method for measuring the coefficient of performance of a heat pump

DOEpatents

Brantley, V.R.; Miller, D.R.

1982-05-18

A method and instrument is provided which allows quick and accurate measurement of the coefficient of performance of an installed electrically powered heat pump including auxiliary resistane heaters. Temperature-sensitive resistors are placed in the return and supply air ducts to measure the temperature increase of the air across the refrigerant and resistive-heating elements of the system. The voltages across the resistors which are directly proportional to the respective duct tempertures are applied to the inputs of a differential amplifier so that its output voltage is proportional to the temperature difference across the unit. A voltage-to-frequency converter connected to the output of the differential amplifier converts the voltage signal to a proportional-frequency signal. A digital watt meter is used to measure the power to the unit and produces a signal having a frequency proportional to the input power. A digital logic circuit ratios the temperature difference signal and the electric power input signal in a unique manner to produce a single number which is the coefficient of performance of the unit over the test interval. The digital logic and an in-situ calibration procedure enables the instrument to make these measurements in such a way that the ratio of heat flow/power input is obtained without computations. No specialized knowledge of thermodynamics or electrons is required to operate the instrument.

Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Hartmann, F.; Pfenning, A.; Rebello Sousa Dias, M.; Langer, F.; Höfling, S.; Kamp, M.; Worschech, L.; Castelano, L. K.; Marques, G. E.; Lopez-Richard, V.

2017-10-01

We study the electroluminescence (EL) emission of purely n-doped resonant tunneling diodes in a wide temperature range. The paper demonstrates that the EL originates from impact ionization and radiative recombination in the extended collector region of the tunneling device. Bistable current-voltage response and EL are detected and their respective high and low states are tuned under varying temperature. The bistability of the EL intensity can be switched from direct to inverted with respect to the tunneling current and the optical on/off ratio can be enhanced with increasing temperature. One order of magnitude amplification of the optical on/off ratio can be attained compared to the electrical one. Our observation can be explained by an interplay of moderate peak-to-valley current ratios, large resonance voltages, and electron energy loss mechanisms, and thus, could be applied as an alternative route towards optoelectronic applications of tunneling devices.

Voltage stress induced reversible diode behavior in pentacene thin films

NASA Astrophysics Data System (ADS)

Murdey, Richard; Sato, Naoki

2012-12-01

The current-voltage characteristics of a vacuum-deposited 100 nm pentacene thin film have been measured in situ under ultrahigh vacuum. Despite using bottom contact geometry with titanium for both electrodes, the I-V curves are asymmetric and the direction and degree of the diode-like behavior vary with sample and measurement history. After careful examination we have found that applying a high positive or negative bias voltage for about 24 h at elevated temperatures was sufficient to completely switch the diode forward direction. The switching action is fully reversible and the diode behavior, once switched, remains stable to repeated measurements at least over a period of several weeks.

Thermal and overcharge abuse analysis of a redox shuttle for overcharge protection of LiFePO4

NASA Astrophysics Data System (ADS)

Lamb, Joshua; Orendorff, Christopher J.; Amine, Khalil; Krumdick, Gregory; Zhang, Zhengcheng; Zhang, Lu; Gozdz, Antoni S.

2014-02-01

This work investigated the performance and abuse tolerance of cells protected using the redox shuttle 1,4-bis(2-methoxyethoxy)-2,5-di-tert-butylbenzene. The thermal efficiencies were evaluated using isothermal battery calorimetry. Cells containing the overcharge shuttle were observed to reach a steady state value of approximately 3.8 V, with a small variance in direct proportion to the applied current. In all cases the heat output from the cells was measured to reach ∼90% of the total input power. The heat output was also measured using isothermal calorimetry. At higher rates of overcharge, the data shows that the cell containing the shuttle rapidly reaches a steady state voltage, while the temperature increases until a moderately high steady state temperature is reached. The control cell meanwhile rapidly increases in both applied voltage and cell temperature until cell failure. Two cells in series were taken deliberately out of balance individually, then charged as a single pack to observe the time needed to bring the cells into balance with one another.

Improved analysis techniques for cylindrical and spherical double probes.

PubMed

Beal, Brian; Johnson, Lee; Brown, Daniel; Blakely, Joseph; Bromaghim, Daron

2012-07-01

A versatile double Langmuir probe technique has been developed by incorporating analytical fits to Laframboise's numerical results for ion current collection by biased electrodes of various sizes relative to the local electron Debye length. Application of these fits to the double probe circuit has produced a set of coupled equations that express the potential of each electrode relative to the plasma potential as well as the resulting probe current as a function of applied probe voltage. These equations can be readily solved via standard numerical techniques in order to determine electron temperature and plasma density from probe current and voltage measurements. Because this method self-consistently accounts for the effects of sheath expansion, it can be readily applied to plasmas with a wide range of densities and low ion temperature (T(i)/T(e) ≪ 1) without requiring probe dimensions to be asymptotically large or small with respect to the electron Debye length. The presented approach has been successfully applied to experimental measurements obtained in the plume of a low-power Hall thruster, which produced a quasineutral, flowing xenon plasma during operation at 200 W on xenon. The measured plasma densities and electron temperatures were in the range of 1 × 10(12)-1 × 10(17) m(-3) and 0.5-5.0 eV, respectively. The estimated measurement uncertainty is +6%∕-34% in density and +∕-30% in electron temperature.

Waltz Mill testing of 345-kV PPP cable

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burghardt, R.R.

1991-09-01

A 345-kV PPP-insulated cable was subjected to a two-year accelerated life test program at the EPRI Waltz Mill Cable Test Facility. Testing started in November 1985 and was successfully completed in September 1988. The program included conductor temperatures ranging from 85{degrees}C to 105{degrees}C and line-to-line voltages from 362 kV to 474 kV. Cyclic testing was performed during 17 of the 24 months. Dissipation factor measurements were made throughout the program. The measurements indicated no deterioration of the cable or splices as a consequence of the high temperatures and voltages applied to them in this test program. 2 refs., 24 figs.

Waltz Mill testing of 765-kV paper-polypropylene-paper (PPP) cable. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burghardt, R.R.

1992-06-01

A 765-kV PPP-insulated cable was subjected to a 27-month accelerated life test program at the EPRI Waltz Mill Cable Test Facility. Testing started in August 1981 and was successfully completed in January 1985. The program included conductor temperatures ranging from 85{degree}C to 105{degree}C and line-to-line voltages from 800 kV to 1050 kV. Cyclic testing was performed during 20 of the 27 months. Dissipation factor measurements were made throughout the program. The measurements indicated no deterioration of the cable or splices as a consequence of the high temperatures and voltages applied to them in this test program.

Waltz Mill testing of 765-kV paper-polypropylene-paper (PPP) cable

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burghardt, R.R.

1992-06-01

A 765-kV PPP-insulated cable was subjected to a 27-month accelerated life test program at the EPRI Waltz Mill Cable Test Facility. Testing started in August 1981 and was successfully completed in January 1985. The program included conductor temperatures ranging from 85{degree}C to 105{degree}C and line-to-line voltages from 800 kV to 1050 kV. Cyclic testing was performed during 20 of the 27 months. Dissipation factor measurements were made throughout the program. The measurements indicated no deterioration of the cable or splices as a consequence of the high temperatures and voltages applied to them in this test program.

Low temperature nano-spin filtering using a diluted magnetic semiconductor core-shell quantum dot

NASA Astrophysics Data System (ADS)

Chattopadhyay, Saikat; Sen, Pratima; Andrews, Joshep Thomas; Sen, Pranay Kumar

2014-07-01

The spin polarized electron transport properties and spin polarized tunneling current have been investigated analytically in a diluted magnetic semiconductor core-shell quantum dot in the presence of applied electric and magnetic fields. Assuming the electron wave function to satisfy WKB approximation, the electron energy eigenvalues have been calculated. The spin polarized tunneling current and the spin dependent tunneling coefficient are obtained by taking into account the exchange interaction and Zeeman splitting. Numerical estimates made for a specific diluted magnetic semiconductor, viz., Zn1-xMnxSe/ZnS core-shell quantum dot establishes the possibility of a nano-spin filter for a particular biasing voltage and applied magnetic field. Influence of applied voltage on spin polarized electron transport has been investigated in a CSQD.

AC electrical breakdown phenomena of epoxy/layered silicate nanocomposite in needle-plate electrodes.

PubMed

Park, Jae-Jun; Lee, Jae-Young

2013-05-01

Epoxy/layered silicate nanocomposite for the insulation of heavy electric equipments were prepared by dispersing 1 wt% of a layered silicate into an epoxy matrix with a homogenizing mixer and then AC electrical treeing and breakdown tests were carried out. Wide-angle X-ray diffraction (WAXD) analysis and transmission electron microscopy (TEM) observation showed that nano-sized monolayers were exfoliated from a multilayered silicate in the epoxy matrix. When the nano-sized silicate layers were incorporated into the epoxy matrix, the breakdown rate in needle-plate electrode geometry was 10.6 times lowered than that of the neat epoxy resin under the applied electrical field of 520.9 kV/mm at 30 degrees C, and electrical tree propagated with much more branches in the epoxy/layered silicate nanocomposite. These results showed that well-dispersed nano-sized silicate layers retarded the electrical tree growth rate. The effects of applied voltage and ambient temperature on the tree initiation, growth, and breakdown rate were also studied, and it was found that the breakdown rate was largely increased, as the applied voltage and ambient temperature increased.

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors.

PubMed

Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

2016-10-11

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this 'electrical activation', the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

Simulation of temperature field for temperature-controlled radio frequency ablation using a hyperbolic bioheat equation and temperature-varied voltage calibration: a liver-mimicking phantom study.

PubMed

Zhang, Man; Zhou, Zhuhuang; Wu, Shuicai; Lin, Lan; Gao, Hongjian; Feng, Yusheng

2015-12-21

This study aims at improving the accuracy of temperature simulation for temperature-controlled radio frequency ablation (RFA). We proposed a new voltage-calibration method in the simulation and investigated the feasibility of a hyperbolic bioheat equation (HBE) in the RFA simulation with longer durations and higher power. A total of 40 RFA experiments was conducted in a liver-mimicking phantom. Four mathematical models with multipolar electrodes were developed by the finite element method in COMSOL software: HBE with/without voltage calibration, and the Pennes bioheat equation (PBE) with/without voltage calibration. The temperature-varied voltage calibration used in the simulation was calculated from an experimental power output and temperature-dependent resistance of liver tissue. We employed the HBE in simulation by considering the delay time τ of 16 s. First, for simulations by each kind of bioheat equation (PBE or HBE), we compared the differences between the temperature-varied voltage-calibration and the fixed-voltage values used in the simulations. Then, the comparisons were conducted between the PBE and the HBE in the simulations with temperature-varied voltage calibration. We verified the simulation results by experimental temperature measurements on nine specific points of the tissue phantom. The results showed that: (1) the proposed voltage-calibration method improved the simulation accuracy of temperature-controlled RFA for both the PBE and the HBE, and (2) for temperature-controlled RFA simulation with the temperature-varied voltage calibration, the HBE method was 0.55 °C more accurate than the PBE method. The proposed temperature-varied voltage calibration may be useful in temperature field simulations of temperature-controlled RFA. Besides, the HBE may be used as an alternative in the simulation of long-duration high-power RFA.

Electromechanical Displacement Detection With an On-Chip High Electron Mobility Transistor Amplifier

NASA Astrophysics Data System (ADS)

Oda, Yasuhiko; Onomitsu, Koji; Kometani, Reo; Warisawa, Shin-ichi; Ishihara, Sunao; Yamaguchi, Hiroshi

2011-06-01

We developed a highly sensitive displacement detection scheme for a GaAs-based electromechanical resonator using an integrated high electron mobility transistor (HEMT). Piezoelectric voltage generated by the vibration of the resonator is applied to the gate of the HEMT, resulting in the on-chip amplification of the signal voltage. This detection scheme achieves a displacement sensitivity of ˜9 pm·Hz-1/2, which is one of the highest among on-chip purely electrical displacement detection schemes at room temperature.

Temperature compensation analysis of liquid lens for variable-focus control

NASA Astrophysics Data System (ADS)

Chen, Shu-Jung; Tai, Tsai-Lin; Shen, Chih-Hsiung

2006-01-01

In this work, a fabrication and temperature compensation analysis and electrowetting for the liquid lenses is proposed. The unique capability of controlling the lens profile during the electrowetting fabrication processes is successfully demonstrated for different ambient temperature environment. For a lens fabricated on a hydrophobic Teflon layer, it is found that when the applied voltage is increased, the focal length increases, and the curvature decreases. One challenge for the liquid lens is operating temperature range. Due to the environment temperature change, the ability of controlling the lens profile is analyzed and measured. The description of change in contact angle corresponding to the variation of ambient temperature is derived. Based on this description, we firstly derive the control of voltage vs. temperature for a fixed dioptric power. The control of lens during a focusing action was studied by observation of the image formed by the light through the transparent bottom of ITO glass. Under several conditions of ambient temperature change, capability of controlling the lens profile for a fixed focus is successfully demonstrated by experiments.

Magneto-Ionic Control of Interfacial Magnetic Anisotorpy

NASA Astrophysics Data System (ADS)

Bauer, Uwe; Emori, Satoru; Beach, Geoffrey

2014-03-01

Voltage control of magnetism could bring about revolutionary new spintronic memory and logic devices. Here, we examine domain wall (DW) dynamics in ultrathin Co films and nanowires under the influence of a voltage applied across a gadolinium oxide gate dielectric that simultaneously acts as an oxygen ion conductor. We investigate two electrode configurations, one with a continuous gate dielectric and the other with a patterned gate dielectric which exhibits an open oxide edge right underneath the electrode perimeter. We demonstrate that the open oxide edge acts as a fast diffusion path for oxygen ions and allows voltage-induced switching of magnetic anisotropy at the nanoscale by modulating interfacial chemistry rather than charge density. At room temperature this effect is limited to the vicinity of the open oxide edge, but at a temperature of 100°C it allows complete control over magnetic anisotropy across the whole electrode area, due to higher oxygen ion mobility at elevated temperature. We then harness this novel ``magneto-ionic'' effect to create unprecedentedly strong voltage-induced anisotropy modifications of 3000 fJ/Vm and create electrically programmable DW traps with pinning strengths of 650 Oe, enough to bring to a standstill DWs travelling at speeds of at least 20 m/s. This work is supported by the National Science Foundation through grant ECCS-1128439.

Thermal Control Utilizing an Thermal Control Utilizing an Two-Phase Loop with High Heat Flux Source

NASA Technical Reports Server (NTRS)

Jeong, Seong-Il; Didion, Jeffrey

2004-01-01

The electric field applied in dielectric fluids causes an imbalance in the dissociation-recombination reaction generated free space charges. The generated charges are redistributed by the applied electric field resulting in the heterocharge layers in the Vicinity of the electrodes. Proper design of the electrodes generates net axial flow motion pumping the fluid. The electrohydrodynamic (EHD) conduction pump is a new device that pumps dielectric fluids utilizing heterocharge layers formed by imposition of electrostatic fields. This paper evaluates the experimental performance of a two-phase breadboard thermal control loop consisting of an EHD conduction pump, condenser, pre-heater, high heat flux evaporator (HE), transport lines, and reservoir (accumulator). The generated pressure head and the maximum applicable heat flux are experimentally determined at various applied voltages and sink temperatures. Recovery from dryout condition by increasing the applied voltage to the pump is also demonstrated.

Prospects of In/CdTe X- and γ-ray detectors with MoO Ohmic contacts

NASA Astrophysics Data System (ADS)

Maslyanchuk, Olena L.; Solovan, Mykhailo M.; Maistruk, Eduard V.; Brus, Viktor V.; Maryanchuk, Pavlo D.; Gnatyuk, Volodymyr A.; Aoki, Toru

2018-01-01

The present paper analyzes the charge transport mechanisms and spectrometric properties of In/CdTe/MoOx heterojunctions prepared by magnetron sputtering of indium and molybdenum oxide thin films onto semi-insulating p-type single-crystal CdTe semiconductor, produced by Acrorad Co. Ltd. Current-voltage characteristics of the detectors at different temperatures were investigated. The charge transport mechanisms in the heterostructures under investigation were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and the space charge limited currents at high voltages. The spectra of 137Cs and 241Am isotopes taken at different applied bias voltages are presented. It is shown that the In/CdTe/MoOx structures can be used as X/γ-ray detectors in the spectrometric mode.

Carrier Transport of Silver Nanowire Contact to p-GaN and its Influence on Leakage Current of LEDs

NASA Astrophysics Data System (ADS)

Oh, Munsik; Kang, Jae-Wook; Kim, Hyunsoo

2018-03-01

The authors investigated the silver nanowires (AgNWs) contact formed on p-GaN. Transmission line model applied to the AgNWs contact to p-GaN produced near ohmic contact with a specific contact resistance (ρ sc) of 10-1˜10-4 Ω·cm2. Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature (I-V-T) measurement revealed a strong temperature dependence with respect to ρ sc, indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.

Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature

NASA Astrophysics Data System (ADS)

Chen, Wanghua; Maurice, Jean-Luc; Vanel, Jean-Charles; Cabarrocas, Pere Roca i.

2018-06-01

Crystalline silicon thin films are promising candidates for low cost and flexible photovoltaics. Among various synthesis techniques, epitaxial growth via low temperature plasma-enhanced chemical vapor deposition is an interesting choice because of two low temperature related benefits: low thermal budget and better doping profile control. However, increasing the growth rate is a tricky issue because the agglomeration of clusters required for epitaxy leads to powder formation in the plasma. In this work, we have measured precisely the time evolution of the self-bias voltage in silane/hydrogen plasmas at millisecond time scale, for different values of the direct-current bias voltage applied to the radio frequency (RF) electrode and growth temperatures. We demonstrate that the decisive factor to increase the epitaxial growth rate, i.e. the inhibition of the agglomeration of plasma-born clusters, can be obtained by decreasing the RF OFF time or increasing the growth temperature. The influence of these two parameters on the growth rate and epitaxial film quality is also presented.

Current-voltage characteristics of C70 solid near Meyer-Neldel temperature

NASA Astrophysics Data System (ADS)

Onishi, Koichi; Sezaimaru, Kouki; Nakashima, Fumihiro; Sun, Yong; Kirimoto, Kenta; Sakaino, Masamichi; Kanemitsu, Shigeru

2017-06-01

The current-voltage characteristics of the C70 solid with hexagonal closed-packed structures were measured in the temperature range of 250-450 K. The current-voltage characteristics can be described as a temporary expedient by a cubic polynomial of the voltage, i = a v 3 + b v 2 + c v + d . Moreover, the Meyer-Neldel temperature of the C70 solid was confirmed to be 310 K, at which a linear relationship between the current and voltage was observed. Also, at temperatures below the Meyer-Neldel temperature, the current increases with increasing voltage. On the other hand, at temperatures above the Meyer-Neldel temperature a negative differential conductivity effect was observed at high voltage side. The negative differential conductivity was related to the electric field and temperature effects on the mobility of charge carrier, which involve two variations in the carrier concentration and the activation energy for carrier hopping transport.

A programmable, multichannel power supply for SIPMs with temperature compensation loop and Ethernet interface

NASA Astrophysics Data System (ADS)

Querol, M.; Rodríguez, J.; Toledo, J.; Esteve, R.; Álvarez, V.; Herrero, V.

2016-12-01

Among the different techniques available, the SiPM power supply described in this paper uses output voltage and sensor temperature feedback. A high-resolution ADC digitizes both the output voltage and an analog signal proportional to the SiPM temperature for each of its 16 independent outputs. The appropriate change in the bias voltage is computed in a micro-controller and this correction is applied via a high resolution DAC to the control input of a DC/DC module that produces the output voltage. This method allows a reduction in gain variations from typically 30% to only 0.5% in a 10 °C range. The power supply is housed in a 3U-height aluminum box. A 2.8'' touch screen on the front panel provides local access to the configuration and monitoring functions using a graphical interface. The unit has an Ethernet interface on its rear side to provide remote operation and integration in slow control systems using the encrypted and secure SSH protocol. A LabVIEW application with SSH interface has been designed to operate the power supply from a remote computer. The power supply has good characteristics, such as 85 V output range with 1 mV resolution and stability better than 2 mVP, excellent output load regulation and programmable rise and fall voltage ramps. Commercial power supplies from well-known manufacturers can show far better specifications though can also result in an over featured and over costly solution for typical applications.

Electrofluid hydrolysis enhances the production of fermentable sugars from corncob via in/reverse-phase induced voltage.

PubMed

Wu, Fengfeng; Jin, Yamei; Li, Dandan; Zhou, Yuyi; Guo, Lunan; Zhang, Mengyue; Xu, Xueming; Yang, Na

2017-06-01

To improve the economic value of lignocellulosic biomasses, an innovative electrofluidic technology has been applied to the efficient hydrolysis of corncob. The system combines fluidic reactors and induced voltages via magnetoelectric coupling effect. The excitation voltage had a positive impact on reducing sugar content (RSC). But, the increase of voltage frequency at 400-700Hz caused a slight decline of the RSC. Higher temperature limits the electrical effect on the hydrolysis at 70-80°C. The energy efficiency increased under the addition of metallic ions and series of in-phase induced voltage to promote hydrolysis. In addition, the 4-series system with in-phase and reverse-phase induced voltages under the synchronous magnetic flux, exhibited a significant influence on the RSC with a maximum increase of 56%. High throughput could be achieved by increasing series in a compact system. Electrofluid hydrolysis avoids electrochemical reaction, electrode corrosion, and sample contamination. Copyright © 2017 Elsevier Ltd. All rights reserved.

Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

NASA Astrophysics Data System (ADS)

Chen, R. M.; Diggins, Z. J.; Mahatme, N. N.; Wang, L.; Zhang, E. X.; Chen, Y. P.; Zhang, H.; Liu, Y. N.; Narasimham, B.; Witulski, A. F.; Bhuva, B. L.; Fleetwood, D. M.

2017-08-01

The single-event sensitivity of bulk 40-nm sequential circuits is investigated as a function of temperature and supply voltage. An overall increase in SEU cross section versus temperature is observed at relatively high supply voltages. However, at low supply voltages, there is a threshold temperature beyond which the SEU cross section decreases with further increases in temperature. Single-event transient induced errors in flip-flops also increase versus temperature at relatively high supply voltages and are more sensitive to temperature variation than those caused by single-event upsets.

Analysis and Modeling of Fullerene Single Electron Transistor Based on Quantum Dot Arrays at Room Temperature

NASA Astrophysics Data System (ADS)

Khadem Hosseini, Vahideh; Ahmadi, Mohammad Taghi; Ismail, Razali

2018-05-01

The single electron transistor (SET) as a fast electronic device is a candidate for future nanoscale circuits because of its low energy consumption, small size and simplified circuit. It consists of source and drain electrodes with a quantum dot (QD) located between them. Moreover, it operates based on the Coulomb blockade (CB) effect. It occurs when the charging energy is greater than the thermal energy. Consequently, this condition limits SET operation at cryogenic temperatures. Hence, using QD arrays can overcome this temperature limitation in SET which can therefore work at room temperature but QD arrays increase the threshold voltage with is an undesirable effect. In this research, fullerene as a zero-dimensional material with unique properties such as quantum capacitance and high critical temperature has been selected for the material of the QDs. Moreover, the current of a fullerene QD array SET has been modeled and its threshold voltage is also compared with a silicon QD array SET. The results show that the threshold voltage of fullerene SET is lower than the silicon one. Furthermore, the comparison study shows that homogeneous linear QD arrays have a lower CB range and better operation than a ring QD array SET. Moreover, the effect of the number of QDs in a QD array SET is investigated. The result confirms that the number of QDs can directly affect the CB range. Moreover, the desired current can be achieved by controlling the applied gate voltage and island diameters in a QD array SET.

Coupled Electro-Thermal Simulations of Single Event Burnout in Power Diodes

NASA Astrophysics Data System (ADS)

Albadri, A. M.; Schrimpf, R. D.; Walker, D. G.; Mahajan, S. V.

2005-12-01

Power diodes may undergo destructive failures when they are struck by high-energy particles during the off state (high reverse-bias voltage). This paper describes the failure mechanism using a coupled electro-thermal model. The specific case of a 3500-V diode is considered and it is shown that the temperatures reached when high voltages are applied are sufficient to cause damage to the constituent materials of the diode. The voltages at which failure occurs (e.g., 2700 V for a 17-MeV carbon ion) are consistent with previously reported data. The simulation results indicate that the catastrophic failures result from local heating caused by avalanche multiplication of ion-generated carriers.

Nonlinear analysis of thermally and electrically actuated functionally graded material microbeam.

PubMed

Li, Yingli; Meguid, S A; Fu, Yiming; Xu, Daolin

2014-02-08

In this paper, we provide a unified and self-consistent treatment of a functionally graded material (FGM) microbeam with varying thermal conductivity subjected to non-uniform or uniform temperature field. Specifically, it is our objective to determine the effect of the microscopic size of the beam, the electrostatic gap, the temperature field and material property on the pull-in voltage of the microbeam under different boundary conditions. The non-uniform temperature field is obtained by integrating the steady-state heat conduction equation. The governing equations account for the microbeam size by introducing an internal material length-scale parameter that is based on the modified couple stress theory. Furthermore, it takes into account Casimir and van der Waals forces, and the associated electrostatic force with the first-order fringing field effects. The resulting nonlinear differential equations were converted to a coupled system of algebraic equations using the differential quadrature method. The outcome of our work shows the dramatic effect and dependence of the pull-in voltage of the FGM microbeam upon the temperature field, its gradient for a given boundary condition. Specifically, both uniform and non-uniform thermal loading can actuate the FGM microbeam even without an applied voltage. Our work also reveals that the non-uniform temperature field is more effective than the uniform temperature field in actuating a FGM cantilever-type microbeam. For the clamped-clamped case, care must be taken to account for the effective use of thermal loading in the design of microbeams. It is also observed that uniform thermal loading will lead to a reduction in the pull-in voltage of a FGM microbeam for all the three boundary conditions considered.

Cryogenic transimpedance amplifier for micromechanical capacitive sensors.

PubMed

Antonio, D; Pastoriza, H; Julián, P; Mandolesi, P

2008-08-01

We developed a cryogenic transimpedance amplifier that works at a broad range of temperatures, from room temperature down to 4 K. The device was realized with a standard complementary metal oxide semiconductor 1.5 mum process. Measurements of current-voltage characteristics, open-loop gain, input referred noise current, and power consumption are presented as a function of temperature. The transimpedance amplifier has been successfully applied to sense the motion of a polysilicon micromechanical oscillator at low temperatures. The whole device is intended to serve as a magnetometer for microscopic superconducting samples.

Measuring Seebeck Coefficient

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey (Inventor)

2015-01-01

A high temperature Seebeck coefficient measurement apparatus and method with various features to minimize typical sources of errors is described. Common sources of temperature and voltage measurement errors which may impact accurate measurement are identified and reduced. Applying the identified principles, a high temperature Seebeck measurement apparatus and method employing a uniaxial, four-point geometry is described to operate from room temperature up to 1300K. These techniques for non-destructive Seebeck coefficient measurements are simple to operate, and are suitable for bulk samples with a broad range of physical types and shapes.

Optimization of non-thermal plasma efficiency in the simultaneous elimination of benzene, toluene, ethyl-benzene, and xylene from polluted airstreams using response surface methodology.

PubMed

Najafpoor, Ali Asghar; Jonidi Jafari, Ahmad; Hosseinzadeh, Ahmad; Khani Jazani, Reza; Bargozin, Hasan

2018-01-01

Treatment with a non-thermal plasma (NTP) is a new and effective technology applied recently for conversion of gases for air pollution control. This research was initiated to optimize the efficient application of the NTP process in benzene, toluene, ethyl-benzene, and xylene (BTEX) removal. The effects of four variables including temperature, initial BTEX concentration, voltage, and flow rate on the BTEX elimination efficiency were investigated using response surface methodology (RSM). The constructed model was evaluated by analysis of variance (ANOVA). The model goodness-of-fit and statistical significance was assessed using determination coefficients (R 2 and R 2 adj ) and the F-test. The results revealed that the R 2 proportion was greater than 0.96 for BTEX removal efficiency. The statistical analysis demonstrated that the BTEX removal efficiency was significantly correlated with the temperature, BTEX concentration, voltage, and flow rate. Voltage was the most influential variable affecting the dependent variable as it exerted a significant effect (p < 0.0001) on the response variable. According to the achieved results, NTP can be applied as a progressive, cost-effective, and practical process for treatment of airstreams polluted with BTEX in conditions of low residence time and high concentrations of pollutants.

Electrical control of superparamagnetism

NASA Astrophysics Data System (ADS)

Yamada, Kihiro T.; Koyama, Tomohiro; Kakizakai, Haruka; Miwa, Kazumoto; Ando, Fuyuki; Ishibashi, Mio; Kim, Kab-Jin; Moriyama, Takahiro; Ono, Shimpei; Chiba, Daichi; Ono, Teruo

2017-01-01

The electric field control of superparamagnetism is realized using a Cu/Ni system, in which the deposited Ni shows superparamagnetic behavior above the blocking temperature. An electric double-layer capacitor (EDLC) with the Cu/Ni electrode and a nonmagnetic counter electrode is fabricated to examine the electric field effect on magnetism in the magnetic electrode. By changing the voltage applied to the EDLC, the blocking temperature of the system is clearly modulated.

Determination of electrical properties of degraded mixed ionic conductors: Impedance studies with applied dc voltage

NASA Astrophysics Data System (ADS)

Bayer, T. J. M.; Carter, J. J.; Wang, Jian-Jun; Klein, Andreas; Chen, Long-Qing; Randall, C. A.

2017-12-01

Under electrical bias, mixed ionic conductors such as SrTiO3 are characterized by oxygen vacancy migration which leads to resistance degradation. The defect chemistry to describe the relationship between conductivity and oxygen vacancies is usually obtained by high temperature conductivity data or quenching experiments. These techniques can investigate the equilibrated state only. Here, we introduce a new approach using in-situ impedance studies with applied dc voltage to analyze the temperature dependent electrical properties of degraded SrTiO3 single crystals. This procedure is most beneficial since it includes electric field driven effects. The benefits of the approach are highlighted by comparing acceptor doped and undoped SrTiO3. This approach allows the determination of the temperature activation of both anodic and cathodic conductivity of Fe-doped SrTiO3 in the degraded state. The anodic activation energy matches well with the published results, while the activation energy of the degraded cathode region reported here is not in agreement with earlier assumptions. The specific discrepancies of the experimental data and the published defect chemistry are discussed, and a defect chemistry model that includes the strong temperature dependence of the electron conductivity in the cathode region is proposed.

Weakly superconducting, thin-film structures as radiation detectors.

NASA Technical Reports Server (NTRS)

Kirschman, R. K.

1972-01-01

Measurements were taken with weakly superconducting quantum structures of the Notarys-Mercereau type, representing a thin superconductor film with a short region that is weakened in the sense that its transition temperature is lower than in the remaining portion of the film. The structure acts as a superconducting relaxation oscillator in which the supercurrent increases with time until the critical current of the weakened section is attained, at which moment the supercurrent decays and the cycle repeats. Under applied radiation, a series of constant-voltage steps appears in the current-voltage curve, and the size of the steps varies periodically with the amplitude of applied radiation. Measurements of the response characteristics were made in the frequency range of 10 to 450 MHz.

Stressed photoconductive detector for far-infrared space applications

NASA Technical Reports Server (NTRS)

Wang, J.-Q.; Richards, P. L.; Beeman, J. W.; Haller, E. E.

1987-01-01

An optimized leaf-spring apparatus for applying uniaxial stress to a Ge:Ga far-IR photoconductor has been designed and tested. This design has significant advantages for space applications which require high quantum efficiency and stable operation over long periods of time. The important features include adequate spring deflection with relatively small overall size, torque-free stress, easy measurement of applied stress, and a detector configuration with high responsivity. One-dimensional arrays of stressed photoconductors can be constructed using this design. A peak responsivity of 38 A/W is achieved in a detector with a cutoff wavelength of 200 microns, which was operated at a temperature of 2.0 K and a bias voltage equal to one-half of the breakdown voltage.

Low-voltage all-inorganic perovskite quantum dot transistor memory

NASA Astrophysics Data System (ADS)

Chen, Zhiliang; Zhang, Yating; Zhang, Heng; Yu, Yu; Song, Xiaoxian; Zhang, Haiting; Cao, Mingxuan; Che, Yongli; Jin, Lufan; Li, Yifan; Li, Qingyan; Dai, Haitao; Yang, Junbo; Yao, Jianquan

2018-05-01

An all-inorganic cesium lead halide quantum dot (QD) based Au nanoparticle (NP) floating-gate memory with a solution processed layer-by-layer method is demonstrated. Easy synthesis at room temperature and excellent stability make all-inorganic CsPbBr3 perovskite QDs suitable as a semiconductor layer in low voltage nonvolatile transistor memory. The bipolarity of QDs has both electrons and holes stored in the Au NP floating gate, resulting in bidirectional shifts of initial threshold voltage according to the applied programing and erasing pulses. Under low operation voltage (±5 V), the memory achieved a great memory window (˜2.4 V), long retention time (>105 s), and stable endurance properties after 200 cycles. So the proposed memory device based on CsPbBr3 perovskite QDs has a great potential in the flash memory market.

Study of the operating parameters of a helicon plasma discharge source using PIC-MCC simulation technique

NASA Astrophysics Data System (ADS)

Jaafarian, Rokhsare; Ganjovi, Alireza; Etaati, Gholamreza

2018-01-01

In this work, a Particle in Cell-Monte Carlo Collision simulation technique is used to study the operating parameters of a typical helicon plasma source. These parameters mainly include the gas pressure, externally applied static magnetic field, the length and radius of the helicon antenna, and the frequency and voltage amplitude of the applied RF power on the helicon antenna. It is shown that, while the strong radial gradient of the formed plasma density in the proximity of the plasma surface is substantially proportional to the energy absorption from the existing Trivelpiece-Gould (TG) modes, the observed high electron temperature in the helicon source at lower static magnetic fields is significant evidence for the energy absorption from the helicon modes. Furthermore, it is found that, at higher gas pressures, both the plasma electron density and temperature are reduced. Besides, it is shown that, at higher static magnetic fields, owing to the enhancement of the energy absorption by the plasma charged species, the plasma electron density is linearly increased. Moreover, it is seen that, at the higher spatial dimensions of the antenna, both the plasma electron density and temperature are reduced. Additionally, while, for the applied frequencies of 13.56 MHz and 27.12 MHz on the helicon antenna, the TG modes appear, for the applied frequency of 18.12 MHz on the helicon antenna, the existence of helicon modes is proved. Moreover, by increasing the applied voltage amplitude on the antenna, the generation of mono-energetic electrons is more probable.

Temporal resistance variation of the second generation HTS tape during superconducting-to-normal state transition.

PubMed

Malginov, Vladimir A; Malginov, Andrey V; Fleishman, Leonid S

2013-01-01

The quench process in high-temperature superconducting (HTS) wires plays an important role in superconducting power devices, such as fault current limiters, magnets, cables, etc. The superconducting device should survive after the overheating due to quench. We studied the evolution of the resistance of the YBCO tape wire during the quench process with 1 ms time resolution for various excitation voltages. The resistive normal zone was found to be located in a domain of about 1-4 cm long. The normal state nucleation begins in 40-60 ms after voltage is applied across the HTS tape. In subsequent 200-300 ms other normal state regions appear. The normal domain heating continues in the following 5-10s that results in a factor of 2-3 increase of its resistance. Formation of the normal domain during the quench process follows the same stages for different excitation voltages. Characteristic domain sizes, lifetimes and temperatures are determined for all stages.

Acoustic Emission Characteristics of Nanocrystalline Porous Silicon Device Driven as an Ultrasonic Speaker

NASA Astrophysics Data System (ADS)

Tsubaki, Kenji; Komoda, Takuya; Koshida, Nobuyoshi

2006-04-01

It is shown that the dc-superimposed driving mode is more useful for the efficient operation of a novel thermally induced ultrasonic emitter based on nanocrystalline porous silicon (nc-PS) than the conventional simple ac-voltage driving mode. The nc-PS device is composed of a patterned heater electrode, an nc-PS layer and a single crystalline silicon (c-Si) substrate. The almost complete thermally insulating property of nc-PS as a quantum-sized system makes it possible to apply the nc-PS device as an ultrasonic generator by efficient thermo acoustic conversion without any mechanical vibrations. In the dc-superimposed driving mode, the output frequency is the same as the input frequency and a stationary temperature rise is kept constant independent of input peak-to-peak voltage. In addition, power efficiency is significantly increases compared with that in the ac-voltage driving mode without affecting on the temperature rise. The present results suggest the further possibility of the nc-PS device being used as a functional speaker.

On electron heating in a low pressure capacitively coupled oxygen discharge

NASA Astrophysics Data System (ADS)

Gudmundsson, J. T.; Snorrason, D. I.

2017-11-01

We use the one-dimensional object-oriented particle-in-cell Monte Carlo collision code oopd1 to explore the charged particle densities, the electronegativity, the electron energy probability function, and the electron heating mechanism in a single frequency capacitively coupled oxygen discharge, when the applied voltage amplitude is varied. We explore discharges operated at 10 mTorr, where electron heating within the plasma bulk (the electronegative core) dominates, and at 50 mTorr, where sheath heating dominates. At 10 mTorr, the discharge is operated in a combined drift-ambipolar and α-mode, and at 50 mTorr, it is operated in the pure α-mode. At 10 mTorr, the effective electron temperature is high and increases with increased driving voltage amplitude, while at 50 mTorr, the effective electron temperature is much lower, in particular, within the electronegative core, where it is roughly 0.2-0.3 eV, and varies only a little with the voltage amplitude.

Smart windows with functions of reflective display and indoor temperature-control

NASA Astrophysics Data System (ADS)

Lee, I.-Hui; Chao, Yu-Ching; Hsu, Chih-Cheng; Chang, Liang-Chao; Chiu, Tien-Lung; Lee, Jiunn-Yih; Kao, Fu-Jen; Lee, Chih-Kung; Lee, Jiun-Haw

2010-02-01

In this paper, a switchable window based on cholestreric liquid crystal (CLC) was demonstrated. Under different applied voltages, incoming light at visible and infrared wavelengths was modulated, respectively. A mixture of CLC with a nematic liquid crystal and a chiral dopant selectively reflected infrared light without bias, which effectively reduced the indoor temperature under sunlight illumination. At this time, transmission at visible range was kept at high and the windows looked transparent. With increasing the voltage to 15V, CLC changed to focal conic state and can be used as a reflective display, a privacy window, or a screen for projector. Under a high voltage (30V), homeotropic state was achieved. At this time, both infrared and visible light can transmit which acted as a normal window, which permitted infrared spectrum of winter sunlight to enter the room so as to reduce the heating requirement. Such a device can be used as a switchable window in smart buildings, green houses and windshields.

Low Temperature Resistive Switching Behavior in a Manganite

NASA Astrophysics Data System (ADS)

Salvo, Christopher; Lopez, Melinda; Tsui, Stephen

2012-02-01

The development of new nonvolatile memory devices remains an important field of consumer electronics. A possible candidate is bipolar resistive switching, a method by which the resistance of a material changes when a voltage is applied. Although there is a great deal of research on this topic, not much has been done at low temperatures. In this work, we compare the room temperature and low temperature behaviors of switching in a manganite thin film. The data indicates that the switching is suppressed upon cooling to cryogenic temperatures, and the presence of crystalline charge traps is tied to the physical mechanism.

Controlling the thermoelectric effect by mechanical manipulation of the electron's quantum phase in atomic junctions.

PubMed

Aiba, Akira; Demir, Firuz; Kaneko, Satoshi; Fujii, Shintaro; Nishino, Tomoaki; Tsukagoshi, Kazuhito; Saffarzadeh, Alireza; Kirczenow, George; Kiguchi, Manabu

2017-08-11

The thermoelectric voltage developed across an atomic metal junction (i.e., a nanostructure in which one or a few atoms connect two metal electrodes) in response to a temperature difference between the electrodes, results from the quantum interference of electrons that pass through the junction multiple times after being scattered by the surrounding defects. Here we report successfully tuning this quantum interference and thus controlling the magnitude and sign of the thermoelectric voltage by applying a mechanical force that deforms the junction. The observed switching of the thermoelectric voltage is reversible and can be cycled many times. Our ab initio and semi-empirical calculations elucidate the detailed mechanism by which the quantum interference is tuned. We show that the applied strain alters the quantum phases of electrons passing through the narrowest part of the junction and hence modifies the electronic quantum interference in the device. Tuning the quantum interference causes the energies of electronic transport resonances to shift, which affects the thermoelectric voltage. These experimental and theoretical studies reveal that Au atomic junctions can be made to exhibit both positive and negative thermoelectric voltages on demand, and demonstrate the importance and tunability of the quantum interference effect in the atomic-scale metal nanostructures.

Biased four-point probe resistance

NASA Astrophysics Data System (ADS)

Garcia-Vazquez, Valentin

2017-11-01

The implications of switching the current polarity in a four-point probe resistance measurement are presented. We demonstrate that, during the inversion of the applied current, any change in the voltage V produced by a continuous drop of the sample temperature T will induce a bias in the temperature-dependent DC resistance. The analytical expression for the bias is deduced and written in terms of the variations of the measured voltages with respect to T and by the variations of T with respect to time t. Experimental data measured on a superconducting Nb thin film confirm that the bias of the normal-state resistance monotonically increases with the cooling rate dT/dt while keeping fixed dV/dT; on the other hand, the bias increases with dV/dT, reaching values up to 13% with respect to the unbiased resistance obtained at room temperature.

Nonlinear conductivity in silicon nitride

NASA Astrophysics Data System (ADS)

Tuncer, Enis

2017-08-01

To better comprehend electrical silicon-package interaction in high voltage applications requires full characterization of the electrical properties of dielectric materials employed in wafer and package level design. Not only the packaging but wafer level dielectrics, i.e. passivation layers, would experience high electric fields generated by the voltage applied pads. In addition the interface between the passivation layer and a mold compound might develop space charge because of the mismatch in electrical properties of the materials. In this contribution electrical properties of a thin silicon nitride (Si3N4) dielectric is reported as a function of temperature and electric field. The measured values later analyzed using different temperature dependent exponential expressions and found that the Mott variable range hopping conduction model was successful to express the data. A full temperature/electric field dependency of conductivity is generated. It was found that the conduction in Si3N4 could be expressed like a field ionization or Fowler-Nordheim mechanism.

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

NASA Astrophysics Data System (ADS)

Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

2016-10-01

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

PubMed Central

Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

2016-01-01

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully. PMID:27725695

Experimental study on the responsivity enhancement of Mn1.56Co0.96Ni0.48O4 detector under moderate bias field

NASA Astrophysics Data System (ADS)

Zhou, Wei; Hou, Yun; Gao, Yan Qing; Zhang, Leibo; Huang, Zhi Ming

2011-08-01

As a typical thermal sensitive material, Mn1.56Co0.96Ni0.48O4 (MCN) has achieved widely applications in uncooled bolometer. In this paper, we report that a large increase in electrical conductivity of MCN is obtained with moderate electric-field strengths (E~103V/cm) applied at room temperature (about 300K). Great enhancement in the responsivity is observed when operating with a proper electric bias field, which corresponds to a threshold voltage VTh. MCN bulk materials are prepared by using the sintering method. Micro MCN detector is fabricated by scribing the bulk material into pieces sized 200×100×10μm. The detector is clinged to an Al2O3 substrate with some electrical insulated epoxy glue which is mounted onto a Cu sink. The surrounding temperature is controlled precisely by a temperature controller with a precision of 1mK. Voltage-current characteristics at 270-330K are carefully examined. Different sweeping speeds of the bias-voltage are applied in different orders so as to find out a proper scanning rate, in which the electrical measurement is proceeded in a state of quasi-thermal equilibrium. According to quasi-thermal equilibrium and the time dependent nominal D.C. power, the temperature increase during the measurement is estimated. The conduction mechanism can be well explained with small polaron theory. Empirical equations are used to describe the thermal dynamic process in the pulsed mode, and the process is also simply simulated via numerical calculations. The experimental results and simulation works will be of some referential value to future studies in uncooled microbolometer made in transition metal oxides.

Magnetic susceptibility well-logging unit with single power supply thermoregulation system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seeley, R. L.

1985-11-05

The magnetic susceptibility well-logging unit with single power supply thermoregulation system provides power from a single surface power supply over a well-logging cable to an integrated circuit voltage regulator system downhole. This voltage regulator system supplies regulated voltages to a temperature control system and also to a Maxwell bridge sensing unit which includes the solenoid of a magnetic susceptibility probe. The temperature control system is provided with power from the voltage regulator system and operates to permit one of several predetermined temperatures to be chosen, and then operates to maintain the solenoid of a magnetic susceptibility probe at this chosenmore » temperature. The temperature control system responds to a temperature sensor mounted upon the probe solenoid to cause resistance heaters concentrically spaced from the probe solenoid to maintain the chosen temperature. A second temperature sensor on the probe solenoid provides a temperature signal to a temperature transmitting unit, which initially converts the sensed temperature to a representative voltage. This voltage is then converted to a representative current signal which is transmitted by current telemetry over the well logging cable to a surface electronic unit which then reconverts the current signal to a voltage signal.« less

Spin and charge thermopower effects in the ferromagnetic graphene junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vahedi, Javad, E-mail: javahedi@gmail.com; Center for Theoretical Physics of Complex Systems, Institute for Basic Science; Barimani, Fattaneh

2016-08-28

Using wave function matching approach and employing the Landauer-Buttiker formula, a ferromagnetic graphene junction with temperature gradient across the system is studied. We calculate the thermally induced charge and spin current as well as the thermoelectric voltage (Seebeck effect) in the linear and nonlinear regimes. Our calculation revealed that due to the electron-hole symmetry, the charge Seebeck coefficient is, for an undoped magnetic graphene, an odd function of chemical potential while the spin Seebeck coefficient is an even function regardless of the temperature gradient and junction length. We have also found with an accurate tuning external parameter, namely, the exchangemore » filed and gate voltage, the temperature gradient across the junction drives a pure spin current without accompanying the charge current. Another important characteristic of thermoelectric transport, thermally induced current in the nonlinear regime, is examined. It would be our main finding that with increasing thermal gradient applied to the junction the spin and charge thermovoltages decrease and even become zero for non zero temperature bias.« less

Investigation of the frequency response of constant voltage anemometers in turbulent flows

NASA Astrophysics Data System (ADS)

Sadeghi Hassanlouei, Atabak

A commercially available anemometer system considered as a prototype, the constant voltage anemometer (CVA), is presented and its working principle is studied and analyzed. We detail the different procedures and corrections that have to be applied to voltage signals to deduce corresponding velocity signals, including the effect of the thermal inertia of the sensor. Results are compared to another anemometer system widely used in research and industry, the constant temperature anemometer (CTA), for validation requirements. Measurements are performed in the turbulent region of a subsonic axisymmetric jet and include mean velocities, root-mean-square (rms) values of velocity fluctuations and power spectral densities. In the same range of operation, we show that the two instruments give similar results. The CVA anemometer slightly underestimates the rms velocity values given by the CTA anemometer which is attributed to a non-linear effect. We show that the cut-off frequency of the CVA system is higher than the more commonly used CTA system, and that the electronic noise level is lower. The constant voltage anemometer is thus an excellent alternative to the constant temperature anemometer for low turbulent flows with rich frequency content, such as supersonic and hypersonic flows.

Characterization of Low Noise, Precision Voltage Reference REF5025-HT Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

The performance of Texas Instruments precision voltage reference REF5025-HT was assessed under extreme temperatures. This low noise, 2.5 V output chip is suitable for use in high temperature down-hole drilling applications, but no data existed on its performance at cryogenic temperatures. The device was characterized in terms of output voltage and supply current at different input voltage levels as a function of temperature between +210 C and -190 C. Line and load regulation characteristics were also established at six load levels and at different temperatures. Restart capability at extreme temperatures and the effects of thermal cycling, covering the test temperature range, on its operation and stability were also investigated. Under no load condition, the voltage reference chip exhibited good stability in its output over the temperature range of -50 C to +200 C. Outside that temperature range, output voltage did change as temperature was changed. For example, at the extreme temperatures of +210 C and - 190 C, the output level dropped to 2.43 V and 2.32 V, respectively as compared to the nominal value of 2.5 V. At cryogenic test temperatures of -100 C and -150 C the output voltage dropped by about 20%. The quiescent supply current of the voltage reference varied slightly with temperature but remained close to its specified value. In terms of line regulation, the device exhibited excellent stability between -50 C and +150 C over the entire input voltage range and load levels. At the other test temperatures, however, while line regulation became poor at cryogenic temperatures of -100 C and below, it suffered slight degradation at the extreme high temperature but only at the high load level of 10 mA. The voltage reference also exhibited very good load regulation with temperature down to -100 C, but its output dropped sharply at +210 C only at the heavy load of 10 mA. The semiconductor chip was able restart at the extreme temperatures of -190 C and +210 C, and the limited thermal cycling did not influence its characteristics and had no impact on its packaging as no structural or physical damage was observed.

Low-temperature hydrogen absorption into V and Nb metals from liquid hydrogen

NASA Astrophysics Data System (ADS)

Takata, H.; Ienaga, K.; Shiga, M.; Islam, Md S.; Inagaki, Y.; Tsujii, H.; Hashizume, K.; Kawae, T.

2018-03-01

We report experimental study on low-temperature hydrogen (H) absorption in vanadium (V) and niobium (Nb) nanocontacts below T = 20 K using a point-contact spectroscopy (PCS) technique. When a small bias voltage is applied between both sides of nanocontacts immersed in liquid H2, the differential conductance (dI/dV) and the second derivative (d2 I/dV 2) are changed from those for pure V and Nb nanocontacts. Further, the spectra approach to those for a high concentrated phase of H with increasing the bias voltage. The results indicate that in-situ investigation of H absorption process from liquid H2 is possible through dI/dV and d2 I/dV 2 measurements using the PCS technique.

Biosensing in a microelectrofluidic system using optical whispering-gallery mode spectroscopy

PubMed Central

Huang, Lei; Guo, Zhixiong

2011-01-01

Label-free detection of biomolecules using an optical whispering-gallery mode sensor in a microelectrofluidic channel is simulated. Negatively charged bovine serum albumin is considered as the model protein analyte. The analyte transport in aqueous solution is controlled by an externally applied electrical field. The finite element method is employed for solving the equations of the charged species transport, the Poisson equation of electric potential, the equations of conservation of momentum and energy, and the Helmholtz equations of electromagnetic waves. The adsorption process of the protein molecules on the microsensor head surface is monitored by the resonance frequency shifts. Frequency shift caused by temperature variation due to Joule heating is analyzed and found to be negligible. The induced shifts behave in a manner similar to Langmuir-like adsorption kinetics; but the time constant increases due to the presence of the external electrical field. A correlation of the frequency shift, the analyte feed concentration in the solution, and the applied voltage gradient is obtained, in which an excellent linear relationship between the frequency shift and the analyte concentration is revealed. The applied voltage gradient enhances significantly the analyte concentration in the vicinity of the sensor surface; thus, the sensor sensitivity which has a power function of the voltage gradient with exponent 2.85 in the controlled voltage range. Simulated detection of extremely low protein concentration to the pico-molar level is carried out. PMID:22662041

High Current Hollow Cathode Plasma Plume Measurements

NASA Technical Reports Server (NTRS)

Thomas, Robert E.; Kamhawi, Hani; Williams, George J., Jr.

2014-01-01

Plasma plume measurements are reported for a hollow cathode assembly (HCA) operated at discharge currents of 50, 70, and 100 A at xenon flow rates between 19 - 46 standard cubic centimeter per minute. The HCA was centrally mounted in the NASA-300MS Hall Thruster and was operated in the "spot" and "plume" modes with additional data taken with an applied magnetic field. Langmuir probes, retarding potential analyzers, and optical emission spectroscopy were employed to measure plasma properties near the orifice of the HCA and to assess the charge state of the near-field plasma. Electron temperatures (2-6 electron volt) and plasma potentials are consistent with probe-measured values in previous investigations. Operation with an applied-field yields higher discharge voltages, increased Xe III production, and increased signals from the 833.5 nm C I line. While operating in plume mode and with an applied field, ion energy distribution measurements yield ions with energies significantly exceeding the applied discharge voltage. These findings are correlated with high-frequency oscillations associated with each mode.

A high-precision voltage source for EIT

PubMed Central

Saulnier, Gary J; Liu, Ning; Ross, Alexander S

2006-01-01

Electrical impedance tomography (EIT) utilizes electrodes placed on the surface of a body to determine the complex conductivity distribution within the body. EIT can be performed by applying currents through the electrodes and measuring the electrode voltages or by applying electrode voltages and measuring the currents. Techniques have also been developed for applying the desired currents using voltage sources. This paper describes a voltage source for use in applied-voltage EIT that includes the capability of measuring both the applied voltage and applied current. A calibration circuit and calibration algorithm are described which enables all voltage sources in an EIT system to be calibrated to a common standard. The calibration minimizes the impact of stray shunt impedance, passive component variability and active component non-ideality. Simulation data obtained using PSpice are used to demonstrate the effectiveness of the circuits and calibration algorithm. PMID:16636413

Nonequilibrium self-energies, Ng approach, and heat current of a nanodevice for small bias voltage and temperature

NASA Astrophysics Data System (ADS)

Aligia, A. A.

2014-03-01

Using nonequilibrium renormalized perturbation theory to second order in the renormalized Coulomb repulsion, we calculate the lesser Σ< and and greater Σ> self-energies of the impurity Anderson model, which describes the current through a quantum dot, in the general asymmetric case. While in general a numerical integration is required to evaluate the perturbative result, we derive an analytical approximation for small frequency ω, bias voltage V, and temperature T, which is exact to total second order in these quantities. The approximation is valid when the corresponding energies ℏω, eV, and kBT are small compared to kBTK, where TK is the Kondo temperature. The result of the numerical integration is compared with the analytical one and with Ng approximation, in which Σ< and Σ> are assumed proportional to the retarded self-energy Σr times an average Fermi function. While it fails at T =0 for ℏ |ω|≲eV, we find that the Ng approximation is excellent for kBT>eV/2 and improves for asymmetric coupling to the leads. Even at T =0, the effect of the Ng approximation on the total occupation at the dot is very small. The dependence on ω and V are discussed in comparison with a Ward identity that is fulfilled by the three approaches. We also calculate the heat currents between the dot and any of the leads at finite bias voltage. One of the heat currents changes sign with the applied bias voltage at finite temperature.

Molecular dynamics simulation of the thermosensitivity of the human connexin 26 hemichannel

NASA Astrophysics Data System (ADS)

Alizadeh, Hadi; Davoodi, Jamal; Zeilinger, Carsten; Rafii-Tabar, Hashem

2018-01-01

Connexin hemichannels mediate cytoplasm and extracellular milieu communication by exchanging a variety of cytoplasmic molecules and ions. These hemichannels can be regulated by external stimuli such as mechanical stress, applied voltage, pH and temperature changes. Although there are many studies on structures and functions of connexin 26 in contexts of pH, ion concentration and voltage, employing computational methods, no such study has been performed so far involving temperature changes. In this study, using molecular dynamics simulation, we investigate thermosensitivity of the human Connexin 26 hemichannel. Our results show that the channel approaches a structurally closed state at lower temperature compared to higher temperature. This is in fair agreement with experimental results that indicate channel closure at lower temperature. Furthermore, our MD simulation results show that some regions of connexin 26 hemichannel are more sensitive to temperature compared to other regions. Whereas the intercellular half of the channel does not show any considerable response to temperature during the simulation time accessible in this study, the cytoplasmic half approaches a closed structural state at lower temperature compared to the higher temperature. Specifically, our results suggest that the cytoplasmic loop, the cytoplasmic half of the second transmembrane helix, and the N-terminus helix play a dominant role in temperature gating.

The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics

NASA Astrophysics Data System (ADS)

Wang, Ruo Zheng; Wu, Sheng Li; Li, Xin Yu; Zhang, Jin Tao

2017-07-01

In this study, we set out to fabricate an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with SiNx/HfO2/SiNx (SHS) sandwiched dielectrics. The J-V and C-V of this SHS film were extracted by the Au/p-Si/SHS/Ti structure. At room temperature the a-IGZO with SHS dielectrics showed the following electrical properties: a threshold voltage of 2.9 V, a subthreshold slope of 0.35 V/decade, an on/off current ratio of 3.5 × 107, and a mobility of 12.8 cm2 V-1 s-1. Finally, we tested the influence of gate bias stress on the TFT, and the result showed that the threshold voltage shifted to a positive voltage when applying a positive gate voltage to the TFT.

Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey, Steven P.; Johnston, Steve; Teeter, Glenn

2016-11-21

We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ~1014 cm-3 to ~1017 cm-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findingsmore » in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.« less

Memristive behavior of the SnO2/TiO2 interface deposited by sol-gel

NASA Astrophysics Data System (ADS)

Boratto, Miguel H.; Ramos, Roberto A.; Congiu, Mirko; Graeff, Carlos F. O.; Scalvi, Luis V. A.

2017-07-01

A novel and cheap Resistive Random Access Memory (RRAM) device is proposed within this work, based on the interface between antimony doped Tin Oxide (4%at Sb:SnO2) and Titanium Oxide (TiO2) thin films, entirely prepared through a low-temperature sol-gel process. The device was fabricated on glass slides using evaporated aluminum electrodes. Typical bipolar memristive behavior under cyclic voltage sweeping and square wave voltages, with well-defined high and low resistance states (HRS and LRS), and set and reset voltages are shown in our samples. The switching mechanism, explained by charges trapping/de-trapping by defects in the SnO2/TiO2 interface, is mainly driven by the external electric field. The calculated on/off ratio was about 8 × 102 in best conditions with good reproducibility over repeated measurement cycles under cyclic voltammetry and about 102 under applied square wave voltage.

Experimental evaluation of the sensitivity to fuel utilization and air management on a 100 kW SOFC system

NASA Astrophysics Data System (ADS)

Santarelli, M.; Leone, P.; Calì, M.; Orsello, G.

The tubular SOFC generator CHP-100, built by Siemens Power Generation (SPG) Stationary Fuel Cells (SFC), is running at the Gas Turbine Technologies (GTT) in Torino (Italy), in the framework of the EOS Project. The nominal load of the generator ensures a produced electric power of around 105 kW e ac and around 60 kW t of thermal power at 250 °C to be used for the custom tailored HVAC system. Several experimental sessions have been scheduled on the generator; the aim is to characterize the operation through the analysis of some global performance index and the detailed control of the operation of the different bundles of the whole stack. All the scheduled tests have been performed by applying the methodology of design of experiment; the main obtained results show the effect of the change of the analysed operating factors in terms of distribution of voltage and temperature over the stack. Fuel consumption tests give information about the sensitivity of the voltage and temperature distribution along the single bundles. On the other hand, since the generator is an air cooled system, the results of the tests on the air stoichs have been used to analyze the generator thermal management (temperature distribution and profiles) and its effect on the polarization. The sensitivity analysis of the local voltage to the overall fuel consumption modifications can be used as a powerful procedure to deduce the local distribution of fuel utilization (FU) along the single bundles: in fact, through a model obtained by deriving the polarization curve respect to FU, it is possible to link the distribution of voltage sensitivities to FC to the distribution of the local FU. The FU distribution will be shown as non-uniform, and this affects the local voltage and temperatures, causing a high warming effect in some rows of the generator. Therefore, a discussion around the effectiveness of the thermal regulation made by the air stoichs, in order to reduce the non-uniform distribution of temperature and the overheating (increasing therefore the voltage behavior along the generator) has been performed. It is demonstrated that the utilization of one air plenum is not effective in the thermal regulation of the whole generator, in particular in the reduction of the temperature gradients linked to the non-uniform fuel distribution.

Temperature and Voltage Coupling to Channel Opening in Transient Receptor Potential Melastatin 8 (TRPM8)*♦

PubMed Central

Raddatz, Natalia; Castillo, Juan P.; Gonzalez, Carlos; Alvarez, Osvaldo; Latorre, Ramon

2014-01-01

Expressed in somatosensory neurons of the dorsal root and trigeminal ganglion, the transient receptor potential melastatin 8 (TRPM8) channel is a Ca2+-permeable cation channel activated by cold, voltage, phosphatidylinositol 4,5-bisphosphate, and menthol. Although TRPM8 channel gating has been characterized at the single channel and macroscopic current levels, there is currently no consensus regarding the extent to which temperature and voltage sensors couple to the conduction gate. In this study, we extended the range of voltages where TRPM8-induced ionic currents were measured and made careful measurements of the maximum open probability the channel can attain at different temperatures by means of fluctuation analysis. The first direct measurements of TRPM8 channel temperature-driven conformational rearrangements provided here suggest that temperature alone is able to open the channel and that the opening reaction is voltage-independent. Voltage is a partial activator of TRPM8 channels, because absolute open probability values measured with fully activated voltage sensors are less than 1, and they decrease as temperature rises. By unveiling the fast temperature-dependent deactivation process, we show that TRPM8 channel deactivation is well described by a double exponential time course. The fast and slow deactivation processes are temperature-dependent with enthalpy changes of 27.2 and 30.8 kcal mol−1. The overall Q10 for the closing reaction is about 33. A three-tiered allosteric model containing four voltage sensors and four temperature sensors can account for the complex deactivation kinetics and coupling between voltage and temperature sensor activation and channel opening. PMID:25352597

Determination of chlorine concentration using single temperature modulated semiconductor gas sensor

NASA Astrophysics Data System (ADS)

Woźniak, Ł.; Kalinowski, P.; Jasiński, G.; Jasiński, P.

2016-11-01

A periodic temperature modulation using sinusoidal heater voltage was applied to a commercial SnO2 semiconductor gas sensor. Resulting resistance response of the sensor was analyzed using a feature extraction method based on Fast Fourier Transformation (FFT). The amplitudes of the higher harmonics of the FFT from the dynamic nonlinear responses of measured gas were further utilized as an input for Artificial Neuron Network (ANN). Determination of the concentration of chlorine was performed. Moreover, this work evaluates the sensor performance upon sinusoidal temperature modulation.

Characterization, Optimization, and Test of the NPSAT1 MEMS 3-Axis Rate Sensor Suite for Use in Small Satellite Attitude Control

DTIC Science & Technology

2007-09-01

Power Control and Filter Boards (PCFB) are powered. The anticipated temperature range is based on a model, and like all models, it is subject to...voltage regulation, filtering , or averaging at room temperature , and with no rate applied. This data was taken at 1K samples/sec, and resulted in an...buffering or amplification should be done as near to the signal source as possible. The low pass filter was added to the rate, BIT, and temperature

Removal of virus and toxin using heatable multi-walled carbon nanotube web filters

NASA Astrophysics Data System (ADS)

Jang, Hoon-Sik; Jeon, Sang Koo; Ryu, Kwon-Sang; Nahm, Seung Hoon

2016-02-01

Many studies have used a carbon nanotube (CNT) filter for pathogen removal and/or inactivation by means of electrochemical or electrochlorination. The large surface area, fine pore size and high electrical and thermal conductivity of CNTs make them suitable and distinct to use for the filtering and removal of pathogens. Here, we grew spin-capable multi-walled CNTs (MWCNTs) and manufactured a web filter using the spun MWCNTs. Botulinum toxin type E light chain (BoT/E-LC) and vaccinia virus (VV) were filtered using the MWCNT web filters and were evaporated and removed by applying direct current (DC) voltage to both sides of the MWCNT webs, excluding electrochemical or electrochlorination. The filtering and removal of BoT/E-LC and VV were performed after seven layers of the MWCNT sheets were coated onto a silicon oxide porous plate. The electrical resistance of the webs in the seven layer sheet was 293 Ω. The temperature of MWCNTs webs was linearly increased to ˜300 °C at 210 V of DC voltage. This temperature was enough to remove BoT/E-LC and VV. From the SEM and XPS results, we confirmed that BoT/E-LC and VV on the MWCNT webs were almost removed by applying a DC voltage and that some element (N, Na, Cl, etc.) as residues on the MWCNT webs remained.

Multi-channel programmable power supply with temperature compensation for silicon sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shukla, R. A.; Achanta, V. G.; Dugad, S. R., E-mail: dugad@cern.ch

Silicon Photo-Multipliers (SiPMs) are increasingly becoming popular for discrete photon counting applications due to the wealth of advantages they offer over conventional photo-detectors such as photo-multiplier tubes and hybrid photo-diodes. SiPMs are used in variety of applications ranging from high energy physics and nuclear physics experiments to medical diagnostics. The gain of a SiPM is directly proportional to the difference between applied and breakdown voltage of the device. However, the breakdown voltage depends critically on the ambient temperature and has a large temperature co-efficient in the range of 40-60 mV/°C resulting in a typical gain variation of 3%-5%/°C [Dinu etmore » al., in IEEE Nuclear Science Symposium, Medical Imaging Conference and 17th Room Temperature Semiconductor Detector Workshop (IEEE, 2010), p. 215]. We plan to use the SiPM as a replacement for PMT in the cosmic ray experiment (GRAPES-3) at Ooty [Gupta et al., Nucl. Instrum. Methods Phys. Res., Sect. A 540, 311 (2005)]. There the SiPMs will be operated in an outdoor environment subjected to temperature variation of about 15 °C over a day. A gain variation of more than 50% was observed for such large variations in the temperature. To stabilize the gain of the SiPM under such operating conditions, a low-cost, multi-channel programmable power supply (0-90 V) was designed that simultaneously provides the bias voltage to 16 SiPMs. The programmable power supply (PPS) was designed to automatically adjust the operating voltage for each channel with a built-in closed loop temperature feedback mechanism. The PPS provides bias voltage with a precision of 6 mV and measures the load current with a precision of 1 nA. Using this PPS, a gain stability of 0.5% for SiPM (Hamamatsu, S10931-050P) has been demonstrated over a wide temperature range of 15 °C. The design methodology of the PPS system, its validation, and the results of the tests carried out on the SiPM is presented in this article. The proposed design also has the capability of gain stabilization of devices with non-linear thermal response.« less

40 CFR 53.55 - Test for effect of variations in power line voltage and ambient temperature.

Code of Federal Regulations, 2010 CFR

2010-07-01

... measurement accuracy. (iv) Coefficient of variability measurement accuracy. (v) Ambient air temperature... line voltage and ambient temperature. 53.55 Section 53.55 Protection of Environment ENVIRONMENTAL... power line voltage and ambient temperature. (a) Overview. (1) This test procedure is a combined...

Room temperature one-step synthesis of microarrays of N-doped flower-like anatase TiO2 composed of well-defined multilayer nanoflakes by Ti anodization

NASA Astrophysics Data System (ADS)

Wang, Chenglin; Wang, Mengye; Xie, Kunpeng; Wu, Qi; Sun, Lan; Lin, Zhiqun; Lin, Changjian

2011-07-01

Microarrays of N-doped flower-like TiO2 composed of well-defined multilayer nanoflakes were synthesized at room temperature by electrochemical anodization of Ti in NH4F aqueous solution. The TiO2 flowers were of good anatase crystallinity. The effects of anodizing time, applied voltage and NH4F concentration on the flower-like morphology were systematically examined. It was found that the morphologies of the anodized Ti were related to the anodizing time and NH4F concentration. The size and density of the TiO2 flowers could be tuned by changing the applied voltage. The obtained N-doped flower-like TiO2 microarrays exhibited intense absorption in wavelengths ranging from 320 to 800 nm. Under both UV and visible light irradiation, the photocatalytic activity of the N-doped flower-like TiO2 microarrays in the oxidation of methyl orange showed a significant increase compared with that of commercial P25 TiO2 film.

Room temperature one-step synthesis of microarrays of N-doped flower-like anatase TiO2 composed of well-defined multilayer nanoflakes by Ti anodization.

PubMed

Wang, Chenglin; Wang, Mengye; Xie, Kunpeng; Wu, Qi; Sun, Lan; Lin, Zhiqun; Lin, Changjian

2011-07-29

Microarrays of N-doped flower-like TiO(2) composed of well-defined multilayer nanoflakes were synthesized at room temperature by electrochemical anodization of Ti in NH(4)F aqueous solution. The TiO(2) flowers were of good anatase crystallinity. The effects of anodizing time, applied voltage and NH(4)F concentration on the flower-like morphology were systematically examined. It was found that the morphologies of the anodized Ti were related to the anodizing time and NH(4)F concentration. The size and density of the TiO(2) flowers could be tuned by changing the applied voltage. The obtained N-doped flower-like TiO(2) microarrays exhibited intense absorption in wavelengths ranging from 320 to 800 nm. Under both UV and visible light irradiation, the photocatalytic activity of the N-doped flower-like TiO(2) microarrays in the oxidation of methyl orange showed a significant increase compared with that of commercial P25 TiO(2) film.

Spin-wave thermal population as temperature probe in magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Goff, A., E-mail: adrien.le-goff@u-psud.fr; Devolder, T.; Nikitin, V.

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm{sup 2} nanopillars. We apply hard axismore » (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.« less

Temperature increase and charging current in polyethylene film during application of high voltage

NASA Astrophysics Data System (ADS)

Zhang, Chao; Kaneko, Kazue; Mizutani, Teruyoshi

2001-12-01

Temperature increase in a low density polyethylene film during the application of high dc voltage was estimated by measuring the sound velocity with a pulsed electroacoustic method. The temperature shows no change under the electric field of 50 MVm-1 at ambient temperature of 30 °C. However, the temperature increases with time, and rises to 63.7 °C in 90 min of the voltage application at ambient temperature of 60 °C. The temperature increase was caused by Joule heating and it resulted in the increase of charging current during the application of high dc voltage. The increase in charging current calculated from the temperature increase agreed well with the experimental one.

Heat current through an artificial Kondo impurity beyond linear response

NASA Astrophysics Data System (ADS)

Sierra, Miguel A.; Sánchez, David

2018-03-01

We investigate the heat current of a strongly interacting quantum dot in the presence of a voltage bias in the Kondo regime. Using the slave-boson mean-field theory, we discuss the behavior of the energy flow and the Joule heating. We find that both contributions to the heat current display interesting symmetry properties under reversal of the applied dc bias. We show that the symmetries arise from the behavior of the dot transmission function. Importantly, the transmission probability is a function of both energy and voltage. This allows us to analyze the heat current in the nonlinear regime of transport. We observe that nonlinearities appear already for voltages smaller than the Kondo temperature. Finally, we suggest to use the contact and electric symmetry coefficients as a way to measure pure energy currents.

Analysis of driving force and exciting voltage for a bi-material infrared resonator

NASA Astrophysics Data System (ADS)

Zhang, Xia; Zhang, Dacheng

2018-01-01

For a designed sensor with bi-material resonator which is used to detect infrared (IR) radiation by means of tracking the change in resonance frequency of the resonator with temperature attributed to the IR radiation from targets, in accordance with electromagnetic theory, the relationship between the electrical driving force exerted on the resonator and the exciting voltage applied across two electrodes of the capacitor in the sensor is presented. According to vibration theory, the dependence of the driving force on the exciting voltage is analyzed. The result of analysis is used to guide the vibration mode and frequency-amplitude response simulations of the resonator. The simulation value is approximately equal to the measured value, which demonstrates that the analysis result is effective and practicable.

Microwave Switching and Attenuation with Superconductors.

NASA Astrophysics Data System (ADS)

Poulin, Grant Darcy

1995-01-01

The discovery of high temperature superconducting (HTS) materials having a critical temperature above the boiling point of liquid nitrogen has generated a large amount of interest in both the basic and applied scientific communities. Considerable research effort has been expended in developing HTS microwave devices, since thin film, passive, microwave components will likely be the first area to be successfully commercialized. This thesis describes a new thin film HTS microwave device that can be operated as a switch or as a continuously variable attenuator. It is well suited for low power analog signal control applications and can easily be integrated with other HTS devices. Due to its small size and mass, the device is expected to find application as a receiver protection switch or as an automatic gain control element, both used in satellite communications receivers. The device has a very low insertion loss, and the isolation in the OFF state is continuously variable to 25 dB. With minor modifications, an isolation exceeding 50 dB is readily achievable. A patent application for the device has been filed, with the patent rights assigned to COM DEV. The device is based on an unusual non-linear response in HTS materials. Under a non-zero DC voltage bias, the current through a superconducting bridge is essentially voltage independent. We have proposed a thermal instability to account for this behaviour. Thermal modelling in conjunction with direct temperature measurements were used to confirm the validity of the model. We have developed a detailed model explaining the microwave response of the device. The model accurately predicts the microwave attenuation as a function of the applied DC control voltage and fully explains the device operation. A key feature is that the device acts as a pure resistive element at microwave frequencies, with no reactance. The resistance is continuously variable, controlled by the DC bias voltage. This distinguishes it from a PIN diode, since PIN diodes have a capacitive reactance that limits their frequency range. Measurements made to confirm the microwave model validity resulted in the development of a new cryogenic de-embedding technique. The technique allows accurate microwave measurements to be made on devices at cryogenic temperatures using only room temperature calibration standards. We have also investigated the effect of kinetic inductance on coplanar waveguide transmission lines, and indicate under what conditions kinetic inductance must be considered in transmission line design.

Inverse spin-valve effect in nanoscale Si-based spin-valve devices

NASA Astrophysics Data System (ADS)

Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

2017-12-01

We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

A future, intense source of negative hydrogen ions

NASA Technical Reports Server (NTRS)

Siefken, Hugh; Stein, Charles

1994-01-01

By directly heating lithium hydride in a vacuum, up to 18 micro-A/sq cm of negative hydrogen has been obtained from the crystal lattice. The amount of ion current extracted and analyzed is closely related to the temperature of the sample and to the rate at which the temperature is changed. The ion current appears to be emission limited and saturates with extraction voltage. For a fixed extraction voltage, the ion current could be maximized by placing a grid between the sample surface and the extraction electrode. Electrons accompanying the negative ions were removed by a magnetic trap. A Wein velocity filter was designed and built to provide definitive mass analysis of the extracted ion species. This technique when applied to other alkali hydrides may produce even higher intensity beams possessing low values of emittance.

Thermopower of molecular junctions: Tunneling to hopping crossover in DNA

NASA Astrophysics Data System (ADS)

Korol, Roman; Kilgour, Michael; Segal, Dvira

2016-12-01

We study the electrical conductance G and the thermopower S of single-molecule junctions and reveal signatures of different transport mechanisms: off-resonant tunneling, on-resonant coherent (ballistic) motion, and multi-step hopping. These mechanisms are identified by studying the behavior of G and S while varying molecular length and temperature. Based on a simple one-dimensional model for molecular junctions, we derive approximate expressions for the thermopower in these different regimes. Analytical results are compared to numerical simulations, performed using a variant of Büttiker's probe technique, the so-called voltage-temperature probe, which allows us to phenomenologically introduce environmentally induced elastic and inelastic electron scattering effects, while applying both voltage and temperature biases across the junction. We further simulate the thermopower of GC-rich DNA sequences with mediating A:T blocks and manifest the tunneling-to-hopping crossover in both the electrical conductance and the thermopower, in accord with measurements by Li et al. [Nat. Commun. 7, 11294 (2016)].

Molecular electronics--resonant transport through single molecules.

PubMed

Lörtscher, Emanuel; Riel, Heike

2010-01-01

The mechanically controllable break-junction technique (MCBJ) enables us to investigate charge transport through an individually contacted and addressed molecule in ultra-high vacuum (UHV) environment at variable temperature ranging from room temperature down to 4 K. Using a statistical measurement and analysis approach, we acquire current-voltage (I-V) characteristics during the repeated formation, manipulation, and breaking of a molecular junction. At low temperatures, voltages accessing the first molecular orbitals in resonance can be applied, providing spectroscopic information about the junction's energy landscape, in particular about the molecular level alignment in respect to the Fermi energy of the electrodes. Thereby, we can investigate the non-linear transport properties of various types of functional molecules and explore their potential use as functional building blocks for future nano-electronics. An example will be given by the reversible and controllable switching between two distinct conductive states of a single molecule. As a proof-of-principle for functional molecular devices, a single-molecule memory element will be demonstrated.

Low-temperature formation of c-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Takenaka, Kosuke; Satake, Yoshikatsu; Uchida, Giichiro; Setsuhara, Yuichi

2018-01-01

The low-temperature formation of c-axis-oriented aluminum nitride thin films was demonstrated by plasma-assisted reactive pulsed-DC magnetron sputtering. The effects of the duty cycle at the pulsed-DC voltage applied to the Al target on the properties of AlN films formed via inductively coupled plasma (ICP)-enhanced pulsed-DC magnetron sputtering deposition were investigated. With decreasing duty cycle at the target voltage, the peak intensity of AlN(0002) increased linearly. The surface roughness of AlN films decreased since there was an increase in film density owing to the impact of energetic ions on the films together with the enhancement of nitriding associated with the relative increase in N radical flux. The improvement of both the crystallinity and surface morphology of AlN films at low temperatures is considered to be caused by the difference between the relative flux values of ions and sputtered atoms.

Room temperature, very sensitive thermometer using a doubly clamped microelectromechanical beam resonator for bolometer applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y., E-mail: zhangya@iis.u-tokyo.ac.jp; Watanabe, Y.; Hosono, S.

We propose a room temperature, all electrical driving and detecting, very sensitive thermometer structure using a microelectromechanical (MEMS) resonator for bolometer applications. We have fabricated a GaAs doubly clamped MEMS beam resonator whose oscillation can be excited and detected by the piezoelectric effect. When a heating power is applied to a NiCr film deposited on the MEMS beam surface, internal thermal stress is generated in the beam, leading to a reduction in the resonance frequency. The present device detects the shift in the resonance frequency caused by heating and works as a very sensitive thermometer. When the resonator was drivenmore » by a voltage slightly below the threshold for the nonlinear, hysteretic oscillation, the thermometer showed a voltage responsivity of about 3300 V/W, while keeping a low noise spectral density of about 60 nV/Hz{sup 1/2}, demonstrating a noise equivalent power of <20 pW/Hz{sup 1/2} even at room temperature. The observed effect can be used for realizing high-sensitivity terahertz bolometers for room-temperature operation.« less

Enhanced Photocurrent in BiFeO3 Materials by Coupling Temperature and Thermo-Phototronic Effects for Self-Powered Ultraviolet Photodetector System.

PubMed

Qi, Jia; Ma, Nan; Ma, Xiaochen; Adelung, Rainer; Yang, Ya

2018-04-25

Ferroelectric materials can be utilized for fabricating photodetectors because of the photovoltaic effect. Enhancing the photovoltaic performance of ferroelectric materials is still a challenge. Here, a self-powered ultraviolet (UV) photodetector is designed based on the ferroelectric BiFeO 3 (BFO) material, exhibiting a high current/voltage response to 365 nm light in heating/cooling states. The photovoltaic performance of the BFO-based device can be well modulated by applying different temperature variations, where the output current and voltage can be enhanced by 60 and 75% in heating and cooling states, respectively. The enhancement mechanism of the photocurrent is associated with both temperature effect and thermo-phototronic effect in the photovoltaic process. Moreover, a 4 × 4 matrix photodetector array has been designed for detecting the 365 nm light distribution in the cooling state by utilizing photovoltage signals. This study clarifies the role of the temperature effect and the thermo-phototronic effect in the photovoltaic process of the BFO material and provides a feasible route for pushing forward practical applications of self-powered UV photodetectors.

Theory of noise equivalent power of a high-temperature superconductor far-infrared bolometer in a photo-thermoelectrical mode of operation

NASA Astrophysics Data System (ADS)

Kaila, M. M.; Russell, G. J.

2000-12-01

We present a theory of noise equivalent power (NEP) and related parameters for a high-temperature superconductor (HTSC) bolometer in which temperature and resistance are the noise sources for open circuit operation and phonon and resistance are the noise sources for voltage-biased operation of the bolometer. The bolometer is designed to use a photo-thermoelectrical mode of operation. A mathematical formulation for the open circuit operation is first presented followed by an analysis of the heterodyne case with a bias applied in constant voltage mode. For the first time electrothermal (ET) and thermoelectrical (TE) feedback are treated in the heat balance equation simultaneously. A parallel resistance geometry consisting of thermoelectric and HTSC material legs has been chosen for the device. Computations for the ET-TE feedback show that the response time improves by three orders of magnitude and the responsivity becomes double for the same TE feedback. In the heat balance equation we have included among the heat transfer processes the temperature dependence of the thermal conductance at the bolometer-substrate interface for the dynamic state.

Sparse-coding denoising applied to reversible conformational switching of a porphyrin self-assembled monolayer induced by scanning tunnelling microscopy.

PubMed

Oliveira, J; Bragança, A M; Alcácer, L; Morgado, J; Figueiredo, M; Bioucas-Dias, J; Ferreira, Q

2018-04-14

Scanning tunnelling microscopy (STM) was used to induce conformational molecular switching on a self-assembled monolayer of zinc-octaethylporphyrin on a graphite/tetradecane interface at room temperature. A reversible conformational change controlled by applying a tip voltage was observed. Consecutive STM images acquired at alternating tip voltages showed that at 0.4 V the porphyrin monolayer presents a molecular arrangement formed by alternate rows with two different types of structural conformations and when the potential is increased to 0.7 V the monolayer presents only one type of conformation. In this paper, we characterize these porphyrin conformational dynamics by analyzing the STM images, which were improved for better quality and interpretation by means of a denoising algorithm, adapted to process STM images from state of the art image processing and analysis methods. STM remains the best technique to 'see' and to manipulate the matter at atomic scale. A very sharp tip a few angstroms of the surface can provide images of molecules and atoms with a powerful resolution. However, these images are strongly affected by noise which is necessary to correct and eliminate. This paper is about new computational tools specifically developed to denoise the images acquired with STM. The new algorithms were tested in STM images, obtained at room temperature, of porphyrin monolayer which presents reversible conformational change in function of the tip bias voltage. Images with high resolution, acquired in real time, show that the porphyrins have different molecular arrangements whether the tip voltage is 0.4 V or 0.7 V. © 2018 The Authors Journal of Microscopy © 2018 Royal Microscopical Society.

Effects of an applied voltage on direct interspecies electron transfer via conductive materials for methane production.

PubMed

Lee, Jung-Yeol; Park, Jeong-Hoon; Park, Hee-Deung

2017-10-01

Direct interspecies electron transfer (DIET) between exoelectrogenic bacteria and methanogenic archaea via conductive materials is reported as an efficient method to produce methane in anaerobic organic waste digestion. A voltage can be applied to the conductive materials to accelerate the DIET between two groups of microorganisms to produce methane. To evaluate this hypothesis, two sets of anaerobic serum bottles with and without applied voltage were used with a pair of graphite rods as conductive materials to facilitate DIET. Initially, the methane production rate was similar between the two sets of serum bottles, and later the serum bottles with an applied voltage of 0.39V showed a 168% higher methane production rate than serum bottles without an applied voltage. In cyclic voltammograms, the characteristic redox peaks for hydrogen and acetate oxidation were identified in the serum bottles with an applied voltage. In the microbial community analyses, hydrogenotrophic methanogens (e.g. Methanobacterium) were observed to be abundant in serum bottles with an applied voltage, while methanogens utilizing carbon dioxide (e.g., Methanosaeta and Methanosarcina) were dominant in serum bottles without an applied voltage. Taken together, the applied voltage on conductive materials might not be effective to promote DIET in methane production. Instead, it appeared to generate a condition for hydrogenotrophic methanogenesis. Copyright © 2017 Elsevier Ltd. All rights reserved.

Magnetic and Electrical Characteristics of Permalloy Thin Tape Bobbin Cores

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.; Wieserman, William R.; Niedra, Janis M.

2005-01-01

The core loss, that is, the power loss, of a soft ferromagnetic material is a function of the flux density, frequency, temperature, excitation type (voltage or current), excitation waveform (sine, square, etc.) and lamination or tape thickness. In previously published papers we have reported on the specific core loss and dynamic B-H loop results for several polycrystalline, nanocrystalline, and amorphous soft magnetic materials. In this previous research we investigated the effect of flux density, frequency, temperature, and excitation waveform for voltage excitation on the specific core loss and dynamic B-H loop. In this paper, we will report on an experimental study to investigate the effect of tape thicknesses of 1, 1/2, 1/4, and 1/8-mil Permalloy type magnetic materials on the specific core loss. The test cores were fabricated by winding the thin tapes on ceramic bobbin cores. The specific core loss tests were conducted at room temperature and over the frequency range of 10 kHz to 750 kHz using sine wave voltage excitation. The results of this experimental investigation will be presented primarily in graphical form to show the effect of tape thickness, frequency, and magnetic flux density on the specific core loss. Also, the experimental results when applied to power transformer design will be briefly discussed.

Study to define low voltage and low temperature operating limits of the Pioneer 10/11 Meteoroid Detection Equipment (MDE) system

NASA Technical Reports Server (NTRS)

Parker, C. D.

1975-01-01

The Pioneer 10/11 meteoroid detection equipment (MDE) pressure cells were tested at liquid nitrogen (LN2) and liquid helium (LHe) temperatures with the excitation voltage controlled as a parameter. The cells failed by firing because of pressurizing gas condensation as the temperature was lowered from LN2 to LHe temperature and when raised from LHe temperature. A study was conducted to determine cell pressure as a function of temperature, and cell failure was estimated as a function of temperature and excitation voltage. The electronic system was also studied, and a profile of primary spacecraft voltage (nominally 28 Vdc) and temperature corresponding to electronic system failure was determined experimentally.

Characterization of Transducers and Resonators under High Drive Levels

NASA Technical Reports Server (NTRS)

Sherrit, Stewart; Bao, X.; Sigel, D. A.; Gradziel, M. J.; Askins, S. A.; Dolgin, B. P.; Bar-Cohen, Y.

2001-01-01

In many applications, piezoelectric transducers are driven at AC voltage levels well beyond the level for which the material was nominally characterized. In this paper we describe an experimental setup that allows for the determination of the main transducer or resonator properties under large AC drive. A sinusoidal voltage from a waveform generator is amplified and applied across the transducer/resonator in series with a known high power resistor. The amplitude of applied voltage and the amplitude and the relative phase of the current through the resistor are monitored on a digital scope. The frequency of the applied signal is swept through resonance and the voltage/current signals are recorded. After corrections for the series resistance and parasitic elements the technique allows for the determination of the complex impedance spectra of the sample as a function of frequency. In addition, access to the current signal allows for the direct investigation of non-linear effects through the application of Fourier transform techniques on the current signal. Our results indicate that care is required when interpreting impedance data at high drive level due to the frequency dependence of the dissipated power. Although the transducer/resonator at a single frequency and after many cycles may reach thermal equilibrium, the spectra as a whole cannot be considered an isothermal measurement due to the temperature change with frequency. Methods to correct for this effect will be discussed. Results determined from resonators of both soft and hard PZT and a ultrasonic horn transducer are presented.

Design of DC-contact RF MEMS switch with temperature stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Junfeng; Nanjing Electronic Devices Institute, Nanjing, 210016; Li, Zhiqun, E-mail: zhiqunli@seu.edu.cn

In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 °C and 100 °C. The variable rate of pull-in voltage to temperature is about -120 mV/°C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 °C formore » 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage.« less

High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

NASA Astrophysics Data System (ADS)

Jiang, C.; Rumyantsev, S. L.; Samnakay, R.; Shur, M. S.; Balandin, A. A.

2015-02-01

We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a "memory step," was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.

Novel voltage signal at proximity-induced superconducting transition temperature in gold nanowires

NASA Astrophysics Data System (ADS)

Wang, Jian; Tang, JunXiong; Wang, ZiQiao; Sun, Yi; Sun, QingFeng; Chan, Moses H. W.

2018-08-01

We observed a novel voltage peak in the proximity-induced superconducting gold (Au) nanowire while cooling the sample through the superconducting transition temperature. The voltage peak turned dip during warming. The voltage peak or dip was found to originate respectively from the emergence or vanishing of the proximity-induced superconductivity in the Au nanowire. The amplitude of the voltage signal depends on the temperature scanning rate, and it cannot be detected when the temperature is changed slower than 0.03 K/min. This transient feature suggests the non-equilibrium property of the effect. Ginzburg-Landau model clarified the voltage peak by considering the emergence of Cooper pairs of relatively lower free energy in superconducting W contact and the non-equilibrium diffusion of Cooper pairs and quasiparticles.

Circuits and methods for impedance determination using active measurement cancelation

DOEpatents

Jamison, David K.

2016-12-13

A delta signal and opposite delta signal are generated such that a sum of the two signals is substantially zero. The delta signal is applied across a first set of electrochemical cells. The opposite delta signal is applied across a second set of electrochemical cells series connected to the first set. A first held voltage is established as the voltage across the first set. A second held voltage is established as the voltage across the second set. A first delta signal is added to the first held voltage and applied to the first set. A second delta signal is added to the second held voltage and applied to the second set. The current responses due to the added delta voltages travel only into the set associated with its delta voltage. The delta voltages and the current responses are used to calculate the impedances of their associated cells.

Superconductivity in two-dimensional NbSe2 field effect transistors

NASA Astrophysics Data System (ADS)

El-Bana, Mohammed S.; Wolverson, Daniel; Russo, Saverio; Balakrishnan, Geetha; Mck Paul, Don; Bending, Simon J.

2013-12-01

We describe investigations of superconductivity in few molecular layer NbSe2 field effect transistors. While devices fabricated from NbSe2 flakes less than eight molecular layers thick did not conduct, thicker flakes were superconducting with an onset Tc that was only slightly depressed from the bulk value for 2H-NbSe2 (7.2 K). The resistance typically showed a small, sharp high temperature transition followed by one or more broader transitions which usually ended in a wide tail to zero resistance at low temperatures. We speculate that these multiple resistive transitions are related to disorder in the layer stacking. The behavior of several flakes has been characterized as a function of temperature, applied field and back-gate voltage. We find that the conductance in the normal state and transition temperature depend weakly on the gate voltage, with both conductivity and Tc decreasing as the electron concentration is increased. The application of a perpendicular magnetic field allows the evolution of different resistive transitions to be tracked and values of the zero temperature upper critical field, Hc2(0), and coherence length, ξ(0), to be independently estimated. Our results are analyzed in terms of available theories for these phenomena.

Ionic Liquid Gating Control of RKKY Interaction in FeCoB/Ru/FeCoB and (Pt/Co) 2/Ru/(Co/Pt) 2 Multilayers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Qu; Wang, Lei; Zhou, Ziyao

To overcome the fundamental challenge of the weak natural response of antiferromagnetic materials under a magnetic field, voltage manipulation of antiferromagnetic interaction is developed to realize ultrafast, high-density, and power efficient antiferromagnetic spintronics. Here, we report a low voltage modulation of Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction via ionic liquid gating in synthetic antiferromagnetic multilayers of FeCoB/Ru/FeCoB and (Pt/Co) 2/Ru/(Co/Pt) 2. At room temperature, the distinct voltage control of transition between antiferromagnetic and ferromagnetic ordering is realized and up to 80% of perpendicular magnetic moments manage to switch with a small-applied voltage bias of 2.5 V. We related this ionic liquid gating-induced RKKYmore » interaction modification to the disturbance of itinerant electrons inside synthetic antiferromagnetic heterostructure and the corresponding change of its Fermi level. Voltage tuning of RKKY interaction may enable the next generation of switchable spintronics between antiferromagnetic and ferromagnetic modes with both fundamental and practical perspectives.« less

How to interpret current-voltage relationships of blocking grain boundaries in oxygen ionic conductors.

PubMed

Kim, Seong K; Khodorov, Sergey; Chen, Chien-Ting; Kim, Sangtae; Lubomirsky, Igor

2013-06-14

A new model based on a linear diffusion equation is proposed to explain the current-voltage characteristics of blocking grain boundaries in Y-doped CeO2 in particular. One can also expect that the model can be applicable to the ionic conductors with blocking grain boundaries, in general. The model considers an infinitely long chain of identical grains separated by grain boundaries, which are treated as regions in which depletion layers of mobile ions are formed due to trapping of immobile charges that do not depend on the applied voltage as well as temperature. The model assumes that (1) the grain boundaries do not represent physical blocking layers, which implies that if there is a second phase at the grain boundaries, then it is too thin to impede ion diffusion and (2) the ions follow Boltzmann distribution throughout the materials. Despite its simplicity, the model successfully reproduces the "power law": current proportional to voltage power n and illustrated with the experimental example of Y-doped ceria. The model also correctly predicts that the product nT, where T is the temperature in K, is constant and is proportional to the grain boundary potential as long as the charge at the grain boundaries remains trapped. The latter allows its direct determination from the current-voltage characteristics and promises considerable simplification in the analysis of the electrical characteristics of the grain boundaries with respect to the models currently in use.

Thermally driven magnetic precession in spin valves

NASA Astrophysics Data System (ADS)

Luc, David; Waintal, Xavier

2014-10-01

We investigate the angular dependence of the spin torque generated when applying a temperature difference across a spin valve. Our study shows the presence of a nontrivial fixed point in this angular dependence. This fixed point opens the possibility for a temperature gradient to stabilize radio frequency oscillations without the need for an external magnetic field. This so-called "wavy" behavior can already be found upon applying a voltage difference across a spin valve but we find that this effect is much more pronounced with a temperature difference. We find that a spin asymmetry of the Seebeck coefficient of the order of 20 μ VK -1 should be large enough for a temperature gradient of a few degrees to trigger the radio-frequency oscillations. Our semiclassical theory is fully parametrized with experimentally measured(able) parameters and allows one to quantitatively predict the amplitude of the torque.

Influence of pulsed electric field on enzymes, bacteria and volatile flavor compounds of unpasteurized sake

NASA Astrophysics Data System (ADS)

Takamasa, OKUMURA; Taro, YAEGASHI; Takahiro, FUJIWARA; Katsuyuki, TAKAHASHI; Koichi, TAKAKI; Tomo, KUDO

2018-04-01

A pulsed electric field (PEF) was applied to unpasteurized sake at constant temperatures, at which α-amylase was not inactivated. We adjusted the input energy to be identical for the temperatures by changing the number of PEF application, because the current significantly increased with the temperature, even the amplitude of the applied voltage was identical. As a result, the α-amylase was seemed to be inactivated by PEF application, not due to thermal effect. The glucoamylase was significantly inactivated by PEF. Moreover, the acid carboxypeptidase was inactivated by PEF at 4 °C but significantly activated at 25 °C. These results show that the sensitivity of enzyme to PEF application differs depending on the types of enzyme and treatment temperature. On the other hand, the colony number of bacteria was remarkably decreased, but the amount of the volatile flavor compounds was not decreased by PEF application.

Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

PubMed

Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

2013-12-13

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

Clues to understanding cold sensation: Thermodynamics and electrophysiological analysis of the cold receptor TRPM8

PubMed Central

Brauchi, Sebastian; Orio, Patricio; Latorre, Ramon

2004-01-01

The cold and menthol receptor, TRPM8, also designated CMR1, is a member of the transient receptor potential (TRP) family of excitatory ion channels. TRPM8 is a channel activated by cold temperatures, voltage, and menthol. In this study, we characterize the cold- and voltage-induced activation of TRPM8 channel in an attempt to identify the temperature- and voltage-dependent components involved in channel activation. Under equilibrium conditions, decreasing temperature has two effects. (i) It shifts the normalized conductance vs. voltage curves toward the left, along the voltage axis. This effect indicates that the degree of order is higher when the channel is in the open configuration. (ii) It increases the maximum channel open probability, suggesting that temperature affects both voltage-dependent and -independent pathways. In the temperature range between 18°C and 25°C, large changes in enthalpy (ΔH = -112 kcal/mol) and entropy (ΔS = -384 cal/mol K) accompany the activation process. The Q10 calculated in the same temperature range is 24. This thermodynamic analysis strongly suggests that the process of opening involves large conformational changes of the channel-forming protein. Therefore, the highly temperature-dependent transition between open and closed configurations is possible because enthalpy and entropy are both large and compensate each other. Our data also demonstrate that temperature and voltage interact allosterically to enhance channel opening. PMID:15492228

Chemical sensors are hybrid-input memristors

NASA Astrophysics Data System (ADS)

Sysoev, V. I.; Arkhipov, V. E.; Okotrub, A. V.; Pershin, Y. V.

2018-04-01

Memristors are two-terminal electronic devices whose resistance depends on the history of input signal (voltage or current). Here we demonstrate that the chemical gas sensors can be considered as memristors with a generalized (hybrid) input, namely, with the input consisting of the voltage, analyte concentrations and applied temperature. The concept of hybrid-input memristors is demonstrated experimentally using a single-walled carbon nanotubes chemical sensor. It is shown that with respect to the hybrid input, the sensor exhibits some features common with memristors such as the hysteretic input-output characteristics. This different perspective on chemical gas sensors may open new possibilities for smart sensor applications.

Validation of High Displacement Piezoelectric Actuator Finite Element Models

NASA Technical Reports Server (NTRS)

Taleghani, B. K.

2000-01-01

The paper presents the results obtained by using NASTRAN(Registered Trademark) and ANSYS(Regitered Trademark) finite element codes to predict doming of the THUNDER piezoelectric actuators during the manufacturing process and subsequent straining due to an applied input voltage. To effectively use such devices in engineering applications, modeling and characterization are essential. Length, width, dome height, and thickness are important parameters for users of such devices. Therefore, finite element models were used to assess the effects of these parameters. NASTRAN(Registered Trademark) and ANSYS(Registered Trademark) used different methods for modeling piezoelectric effects. In NASTRAN(Registered Trademark), a thermal analogy was used to represent voltage at nodes as equivalent temperatures, while ANSYS(Registered Trademark) processed the voltage directly using piezoelectric finite elements. The results of finite element models were validated by using the experimental results.

Voltage-Driven Conformational Switching with Distinct Raman Signature in a Single-Molecule Junction.

PubMed

Bi, Hai; Palma, Carlos-Andres; Gong, Yuxiang; Hasch, Peter; Elbing, Mark; Mayor, Marcel; Reichert, Joachim; Barth, Johannes V

2018-04-11

Precisely controlling well-defined, stable single-molecule junctions represents a pillar of single-molecule electronics. Early attempts to establish computing with molecular switching arrays were partly challenged by limitations in the direct chemical characterization of metal-molecule-metal junctions. While cryogenic scanning probe studies have advanced the mechanistic understanding of current- and voltage-induced conformational switching, metal-molecule-metal conformations are still largely inferred from indirect evidence. Hence, the development of robust, chemically sensitive techniques is instrumental for advancement in the field. Here we probe the conformation of a two-state molecular switch with vibrational spectroscopy, while simultaneously operating it by means of the applied voltage. Our study emphasizes measurements of single-molecule Raman spectra in a room-temperature stable single-molecule switch presenting a signal modulation of nearly 2 orders of magnitude.

Probing of barrier induced deviations in current-voltage characteristics of polymer devices by impedance spectroscopy

NASA Astrophysics Data System (ADS)

Khan, Motiur Rahman; Rao, K. S. R. Koteswara; Menon, R.

2017-05-01

Temperature dependent current-voltage measurements have been performed on poly(3-methylthiophene) based devices in metal/polymer/metal geometry in temperature range 90-300 K. Space charge limited current (SCLC) controlled by exponentially distributed traps is observed at all the measured temperatures at intermediate voltage range. At higher voltages, trap-free SCLC is observed at 90 K only while slope less than 2 is observed at higher temperatures which is quiet unusual in polymer devices. Impedance measurements were performed at different bias voltages. The unusual behavior observed in current-voltage characteristics is explained by Cole-Cole plot which gives the signature of interface dipole on electrode/polymer interface. Two relaxation mechanisms are obtained from the real part of impedance vs frequency spectra which confirms the interface related phenomena in the device

Electrical system for measurement of breakdown voltage of vacuum and gas-filled tubes using a dynamic method

NASA Astrophysics Data System (ADS)

Pejović, Milić M.; Milosavljević, Čedomir S.; Pejović, Momčilo M.

2003-06-01

This article describes an electrical system aimed at measuring and data acquisition of breakdown voltages of vacuum and gas-filled tubes. The measurements were performed using a nitrogen-filled tube at 4 mbar pressure. Based on the measured breakdown voltage data as a function of the applied voltage increase rate, a static breakdown voltage is estimated for the applied voltage gradient ranging from 0.1 to 1 V s-1 and from 1 to 10 V s-1. The histograms of breakdown voltages versus applied voltage increase rates from 0.1 and 0.5 V s-1 are approximated by the probability density functions using a fitting procedure.

Electric-Field-Induced Degradation of Methylammonium Lead Iodide Perovskite Solar Cells.

PubMed

Bae, Soohyun; Kim, Seongtak; Lee, Sang-Won; Cho, Kyung Jin; Park, Sungeun; Lee, Seunghun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan

2016-08-18

Perovskite solar cells have great potential for high efficiency generation but are subject to the impact of external environmental conditions such as humidity, UV and sun light, temperature, and electric fields. The long-term stability of perovskite solar cells is an important issue for their commercialization. Various studies on the stability of perovskite solar cells are currently being performed; however, the stability related to electric fields is rarely discussed. Here the electrical stability of perovskite solar cells is studied. Ion migration is confirmed using the temperature-dependent dark current decay. Changes in the power conversion efficiency according to the amount of the external bias are measured in the dark, and a significant drop is observed only at an applied voltage greater than 0.8 V. We demonstrate that perovskite solar cells are stable under an electric field up to the operating voltage.

Demonstration of Scalable Nernst Voltage in a Coiled Galfenol Wire

NASA Astrophysics Data System (ADS)

Codecido, Emilio; Yang, Zihao; Marquez, Jason; Zheng, Yuanhua; Heremans, Joseph; Myers, Roberto

Transverse thermopower by the Nernst effect is usually considered far too weak an effect for waste heat recovery and power generation. We propose that magnetostriction provides a pathway to enhance the Nernst effect because it increases phonon and magnon coupling. Here, we measure the Nernst coefficient in the magnetostrictive alloy, Galfenol (Fe0.85Ga0.15) and observe an extraordinarily large Nernst coefficient at room temperature of 4 μV/KT. Next we demonstrate a new geometry for efficient and low cost power generation by wrapping Galfenol wire around a hot cylinder. This coil geometry results in a radial temperature gradient direction. With a magnetic field applied in the axial direction, a uniform Nernst electric field is produced along the azimuthal direction at every point along the coil. As a result of this geometry, the Nernst voltage is shown to increase linearly with wire length, proving the concept of scalable Nernst thermal power generation.

Apoptotic effects on cultured cells of atmospheric-pressure plasma produced using various gases

NASA Astrophysics Data System (ADS)

Tominami, Kanako; Kanetaka, Hiroyasu; Kudo, Tada-aki; Sasaki, Shota; Kaneko, Toshiro

2016-01-01

This study investigated the effects of low-temperature atmospheric-pressure plasma on various cells such as rat fibroblastic Rat-1 cell line, rat neuroblastoma-like PC12 cell line, and rat macrophage-like NR8383 cell line. The plasma was irradiated directly to a culture medium containing plated cells for 0-20 s. The applied voltage, excitation frequency, and argon or helium gas flow were, respectively, 3-6 kV, 10 kHz, and 3 L/min. Cell viability and apoptotic activity were evaluated using annexin-V/propidium iodide staining. Results showed that the low-temperature atmospheric-pressure plasma irradiation promoted cell death in a discharge-voltage-dependent and irradiation-time-dependent manner. Furthermore, different effects are produced depending on the cell type. Moreover, entirely different mechanisms might be responsible for the induction of apoptosis in cells by helium and argon plasma.

Thermally Stable, Piezoelectric and Pyroelectric Polymeric Substrates and Method Relating Thereto

NASA Technical Reports Server (NTRS)

Simpson, Joycelyn O. (Inventor); St.Claire, Terry L. (Inventor)

2002-01-01

A thermally stable, piezoelectric and pyroelectric polymeric substrate was prepared, This thermally stable, piezoelectric and pyroelectric polymeric substrate may be used to prepare electromechanical transducers, thermomechanical transducers, accelerometers, acoustic sensors, infrared sensors, pressure sensors, vibration sensors, impact sensors. in-situ temperature sensors, in-situ stress/strain sensors, micro actuators, switches. adjustable fresnel lenses, speakers, tactile sensors, weather sensors, micro positioners, ultrasonic devices, power generators, tunable reflectors, microphones, and hydrophones. The process for preparing these polymeric substrates includes: providing a polymeric substrate having a softening temperature greater than 100 C; depositing a metal electrode material onto the polymer film; attaching a plurality of electrical leads to the metal electrode coated polymeric substrates; heating the metal electrode coated polymeric substrate in a low dielectric medium; applying a voltage to the heated metal electrode coated polymeric substrate to induce polarization; and cooling the polarized metal electrode coated polymeric electrode while maintaining a constant voltage.

Thermally Stable, Piezoelectric and Pyroelectric Polymeric Substrates

NASA Technical Reports Server (NTRS)

Simpson, Joycely O. (Inventor); St.Clair, Terry L. (Inventor)

1999-01-01

A thermally stable, piezoelectric and pyroelectric polymeric substrate was prepared. This thermally stable, piezoelectric and pyroelectric polymeric substrate may be used to prepare electromechanical transducers, thermomechanical transducers, accelerometers. acoustic sensors, infrared sensors, pressure sensors, vibration sensors, impact sensors, in-situ temperature sensors, in-situ stress/strain sensors, micro actuators, switches, adjustable fresnel lenses, speakers, tactile sensors. weather sensors, micro positioners, ultrasonic devices, power generators, tunable reflectors, microphones, and hydrophones. The process for preparing these polymeric substrates includes: providing a polymeric substrate having a softening temperature greater than 1000 C; depositing a metal electrode material onto the polymer film; attaching a plurality of electrical leads to the metal electrode coated polymeric substrate; heating the metal electrode coated polymeric substrate in a low dielectric medium; applying a voltage to the heated metal electrode coated polymeric substrate to induce polarization; and cooling the polarized metal electrode coated polymeric electrode while maintaining a constant voltage.

Method of Making Thermally Stable, Piezoelectric and Proelectric Polymeric Substrates

NASA Technical Reports Server (NTRS)

Simpson, Joycelyn O. (Inventor); St.Clair, Terry L. (Inventor)

1999-01-01

A thermally stable, piezoelectric and pyroelectric polymeric substrate was prepared. This thermally stable, piezoelectric and pyroelectric polymeric substrate may be used to prepare electromechanical transducers, thermomechanical transducers, accelerometers, acoustic sensors, infrared sensors, pressure sensors, vibration sensors, impact sensors. in-situ temperature sensors, in-situ stress/strain sensors, micro actuators, switches, adjustable fresnel lenses, speakers, tactile sensors, weather sensors, micro positioners, ultrasonic devices, power generators, tunable reflectors, microphones, and hydrophones. The process for preparing these polymeric substrates includes: providing a polymeric substrate having a softening temperature greater than 100 C; depositing a metal electrode material onto the polymer film; attaching a plurality of electrical leads to the metal electrode coated polymeric substrate; heating the metal electrode coated polymeric substrate in a low dielectric medium: applying a voltage to the heated metal electrode coated polymeric substrate to induce polarization; and cooling the polarized metal electrode coated polymeric electrode while maintaining a constant voltage.

Alternative generation of well-aligned uniform lying helix texture in a cholesteric liquid crystal cell

NASA Astrophysics Data System (ADS)

Yu, Chia-Hua; Wu, Po-Chang; Lee, Wei

2017-10-01

This work demonstrates a simple approach for obtaining a well-aligned uniform lying helix (ULH) texture and a tri-bistable feature at ambient temperature in a typical 90°-twisted cell filled with a short-pitch cholesteric liquid crystal. This ULH texture is obtained at room temperature from initially field-induced helix-free homeotropic state by gradually decreasing the applied voltage. Depending on the way and rate of reducing the voltage, three stable states (i.e., Grandjean planar, focal conic, and ULH) are generated and switching between any two of them is realized. Moreover, the electrical operation of the cell in the ULH state enables the tunability in phase retardation via the deformation of the ULH. The observations made in this work may be useful for applications such as tunable phase modulators and energy-efficient photonic devices.

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

PubMed Central

Ashok, Akarapu; Pal, Prem

2014-01-01

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics. PMID:24672287

A concept of wireless and passive very-high temperature sensor

NASA Astrophysics Data System (ADS)

Nicolay, P.; Matloub, R.; Bardong, J.; Mazzalai, A.; Muralt, P.

2017-05-01

There is a need for sensors capable operating at temperatures above 1000 °C. We describe an innovative sensor that might achieve this goal. The sensor comprises two main elements: a thermocouple and a surface acoustic wave (SAW) strain sensor. The cold junction of the thermocouple is electrically connected to a highly piezoelectric thin layer, deposited on top of a SAW substrate. In operation, the voltage generated by the temperature gradient between the hot (>1000 °C) and cold junction (<350 °C) generates a strain field in the layer, which is mechanically transmitted to the substrate. This modifies the SAW propagation conditions and therefore the sensors' radiofrequency response. The change depends on the applied voltage and thus on the hot junction temperature. As SAW devices are passive elements that can be remotely interrogated, it becomes possible to infer the hot junction temperature from the radiofrequency response, i.e., to remotely read temperatures above 1000 °C, without embedded electronics. In this paper, we demonstrate the feasibility of this concept, using AlN layers deposited on Y-Z Lithium Niobate (LN). The achieved sensitivity of 80 Hz/V at 400 MHz is constant over a wide voltage range. Numerical simulations were performed to compute the main properties of the demonstrators and suggest optimization strategies. Improvements are expected from the use of stronger piezoelectric layers, such as AlScN or Pb(Ti,Zr)O3 (PZT), which could increase the sensitivity by factors of 3 and 20, as estimated from their transverse piezoelectric coefficients. As a first step in this direction, thin PZT layers have been deposited on Y-Z LN.

Optimization on drying conditions of a solar electrohydrodynamic drying system based on desirability concept

PubMed Central

Dalvand, Mohammad Jafar; Mohtasebi, Seyed Saeid; Rafiee, Shahin

2014-01-01

The purpose of this article was to present a new drying method for agricultural products. Electrohydrodynamic (EHD) has been applied for drying of agricultural materials due to several advantages such as energy saving, low cost equipment, low drying temperatures, and superior material quality. To evaluate this method, an EHD dryer based on solar (photovoltaic) energy was designed and fabricated. Moreover, the optimum condition for the EHD drying of kiwi fruit was studied by applying the Box–Behnken design of response surface methodology. The desirability function was applied for optimization in case of single objective and multiobjective functions. By using the multiobjective optimization method, maximum desirability value of 0.865 was obtained based on the following: applied voltage of 15 kV, field strength of 5.2 kV cm−1, without forced air stream, and finally a combination of 17 discharge electrodes (needles). The results indicated that increasing the applied voltage from 6 to 15 kV, moisture ratio (MR) decreased, though energy efficiency and energy consumption were increasing. On the other hand, field strength of 5.2 kV cm−1 was the optimal point in terms of MR. PMID:25493195

Optimization on drying conditions of a solar electrohydrodynamic drying system based on desirability concept.

PubMed

Dalvand, Mohammad Jafar; Mohtasebi, Seyed Saeid; Rafiee, Shahin

2014-11-01

The purpose of this article was to present a new drying method for agricultural products. Electrohydrodynamic (EHD) has been applied for drying of agricultural materials due to several advantages such as energy saving, low cost equipment, low drying temperatures, and superior material quality. To evaluate this method, an EHD dryer based on solar (photovoltaic) energy was designed and fabricated. Moreover, the optimum condition for the EHD drying of kiwi fruit was studied by applying the Box-Behnken design of response surface methodology. The desirability function was applied for optimization in case of single objective and multiobjective functions. By using the multiobjective optimization method, maximum desirability value of 0.865 was obtained based on the following: applied voltage of 15 kV, field strength of 5.2 kV cm(-1), without forced air stream, and finally a combination of 17 discharge electrodes (needles). The results indicated that increasing the applied voltage from 6 to 15 kV, moisture ratio (MR) decreased, though energy efficiency and energy consumption were increasing. On the other hand, field strength of 5.2 kV cm(-1) was the optimal point in terms of MR.

Optimization of applied voltages for on-chip concentration of DNA using nanoslit

NASA Astrophysics Data System (ADS)

Azuma, Naoki; Itoh, Shintaro; Fukuzawa, Kenji; Zhang, Hedong

2017-12-01

On-chip sample concentration is an effective pretreatment to improve the detection sensitivity of lab-on-a-chip devices for biochemical analysis. In a previous study, we successfully achieved DNA sample concentration using a nanoslit fabricated in the microchannel of a device designed for DNA size separation. The nanoslit was a channel with a depth smaller than the diameter of a random coil-shaped DNA molecule. The concentration was achieved using the entropy trap at the boundary between the microchannel and the nanoslit. DNA molecules migrating toward the nanoslit owing to electrophoresis were trapped in front of the nanoslit and the concentration was enhanced over time. In this study, we successfully maximize the molecular concentration by optimizing the applied voltage for electrophoresis and verifying the effect of temperature. In addition, we propose a model formula that predicts the molecular concentration, the validity of which is confirmed through comparison with experimental results.

Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour

NASA Astrophysics Data System (ADS)

Donoval, Daniel; Vrbicky, Andrej; Marek, Juraj; Chvala, Ales; Beno, Peter

2008-06-01

High-voltage power MOSFETs have been widely used in switching mode power supply circuits as output drivers for industrial and automotive electronic control systems. However, as the device size is reduced, the energy handling capability is becoming a very important issue to be addressed together with the trade-off between the series on-resistance RON and breakdown voltage VBR. Unclamped inductive switching (UIS) condition represents the circuit switching operation for evaluating the "ruggedness", which characterizes the device capability to handle high avalanche currents during the applied stress. In this paper we present an experimental method which modifies the standard UIS test and allows extraction of the maximum device temperature after the applied standard stress pulse vanishes. Corresponding analysis and non-destructive prediction of the ruggedness of power DMOSFETs devices supported by advanced 2-D mixed mode electro-thermal device and circuit simulation under UIS conditions using calibrated physical models is provided also. The results of numerical simulation are in a very good correlation with experimental characteristics and contribute to their physical interpretation by identification of the mechanism of heat generation and heat source location and continuous temperature extraction.

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

NASA Astrophysics Data System (ADS)

Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

2017-06-01

N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

Electric-field-induced extremely large change in resistance in graphene ferromagnets

NASA Astrophysics Data System (ADS)

Song, Yu

2018-01-01

A colossal magnetoresistance (˜100×10^3% ) and an extremely large magnetoresistance (˜1×10^6% ) have been previously explored in manganite perovskites and Dirac materials, respectively. However, the requirement of an extremely strong magnetic field (and an extremely low temperature) makes them not applicable for realistic devices. In this work, we propose a device that can generate even larger changes in resistance in a zero-magnetic field and at a high temperature. The device is composed of graphene under two strips of yttrium iron garnet (YIG), where two gate voltages are applied to cancel the heavy charge doping in the YIG-induced half-metallic ferromagnets. By calculations using the Landauer-Büttiker formalism, we demonstrate that, when a proper gate voltage is applied on the free ferromagnet, changes in resistance up to 305×10^6% (16×10^3% ) can be achieved at the liquid helium (nitrogen) temperature and in a zero magnetic field. We attribute such a remarkable effect to a gate-induced full-polarization reversal in the free ferromagnet, which results in a metal-state to insulator-state transition in the device. We also find that the proposed effect can be realized in devices using other magnetic insulators, such as EuO and EuS. Our work should be helpful for developing a realistic switching device that is energy saving and CMOS-technology compatible.

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Buried Oxide Densification for Low Power, Low Voltage CMOS Applications

NASA Technical Reports Server (NTRS)

Allen, L. P.; Anc, M. J.; Dolan, B.; Jiao, J.; Guss, B.; Seraphin, S.; Liu, S. T.; Jenkins, W.

1998-01-01

Special technology and circuit architecture are of growing interest for implementation of circuits which operate at low supply voltages and consume low power levels without sacrificing performance[1]. Use of thin buried oxide SOI substrates is a primary approach to simultaneously achieve these goals. A significant aspect regarding SIMOX SOI for low voltage, low power applications is the reliability and performance of the thin buried oxide. In addition, when subjected to high total dose irradiation, the silicon islands within the BOX layer of SIMOX can store charges and significantly effect the back channel threshold voltages of devices. Thus, elimination of the islands within the buried oxide (BOX) layer is preferred in order to prevent leakage through these conductive islands and charge build-up within the buried oxide layer. A differential (2-step) ramp rate as applied to full and 100 nm BOX SIMOX was previously reported to play a significant role in the stoichiometry and island formation within the buried layer[2]. This paper focus is on the properties of a thin (120nm) buried oxide as a function of the anneal ramp rate and the temperature of anneal. In this research, we have found an improvement in the buried oxide stoichiometry with the use of a slower, singular ramp rate for specified thin buried oxides, with slower ramp rates and higher temperatures of anneal suggested for reducing the presence of Si islands within the BOX layer.

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE PAGES

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

2015-08-12

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Investigation of the spin Seebeck effect and anomalous Nernst effect in a bulk carbon material

NASA Astrophysics Data System (ADS)

Wongjom, Poramed; Pinitsoontorn, Supree

2018-03-01

Since the discovery of the spin Seebeck effect (SSE) in 2008, it has become one of the most active topics in the spin caloritronics research field. It opened up a new way to create the spin current by a combination of magnetic fields and heat. The SSE was observed in many kinds of materials including metallic, semiconductor, or insulating magnets, as well as non-magnetic materials. On the other hand, carbon-based materials have become one of the most exciting research areas recently due to its low cost, abundance and some exceptional functionalities. In this work, we have investigated the possibility of the SSE in bulk carbon materials for the first time. Thin platinum film (Pt), coated on the smoothened surface of the bulk carbon, was used as the spin detector via the inverse spin Hall effect (ISHE). The experiment for observing longitudinal SSE in the bulk carbon was set up by applying a magnetic field up to 30 kOe to the sample with the direction perpendicular to the applied temperature gradient. The induced voltage from the SSE was extracted. However, for conductive materials, e.g. carbon, the voltage signal under this set up could be a combination of the SSE and the anomalous Nernst effect (ANE). Therefore, two measurement configurations were carried out, i.e. the in-plane magnetization (IM), and the perpendicular-to-plane magnetization (PM). For the IM configuration, the SSE + ANE signals were detected where as the only ANE signal existed in the PM configuration. The results showed that there were the differences between the voltage signals from the IM and PM configurations implying the possibility of the SSE in the bulk carbon material. Moreover, it was found that the difference in the IM and PM signals was a function of the magnetic field strength, temperature difference, and measurement temperature. Although the magnitude of the possible SSE voltage in this experiment was rather low (less than 0.5 μV at 50 K), this research showed that potential of using low cost and abundant bulk carbon as spin current supplier or thermoelectric power generators.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Comparative study of electrical breakdown properties of deionized water and heavy water under pulsed power conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veda Prakash, G.; Kumar, R.; Saurabh, K.

A comparative study of electrical breakdown properties of deionized water (H{sub 2}O) and heavy water (D{sub 2}O) is presented with two different electrode materials (stainless steel (SS) and brass) and polarity (positive and negative) combinations. The pulsed (∼a few tens of nanoseconds) discharges are conducted by applying high voltage (∼a few hundred kV) pulse between two hemisphere electrodes of the same material, spaced 3 mm apart, at room temperature (∼26-28 °C) with the help of Tesla based pulse generator. It is observed that breakdown occurred in heavy water at lesser voltage and in short duration compared to deionized water irrespective ofmore » the electrode material and applied voltage polarity chosen. SS electrodes are seen to perform better in terms of the voltage withstanding capacity of the liquid dielectric as compared to brass electrodes. Further, discharges with negative polarity are found to give slightly enhanced discharge breakdown voltage when compared with those with positive polarity. The observations corroborate well with conductivity measurements carried out on original and post-treated liquid samples. An interpretation of the observations is attempted using Fourier transform infrared measurements on original and post-treated liquids as well as in situ emission spectra studies. A yet another important observation from the emission spectra has been that even short (nanosecond) duration discharges result in the formation of a considerable amount of ions injected into the liquid from the electrodes in a similar manner as reported for long (microseconds) discharges. The experimental observations show that deionised water is better suited for high voltage applications and also offer a comparison of the discharge behaviour with different electrodes and polarities.« less

Preparation, characterization and electroluminescence studies of ZnO nanorods for optoelectronic device applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Anju, E-mail: singh-nk24@yahoo.com; Vishwakarma, H. L., E-mail: horilal5@yahoo.com

2015-07-31

In this work, ZnO nanorods were achieved by a simple chemical precipitation method in the presence of capping agent Poly Vinyl Pyrrolidone (PVP) at room temperature. X-Ray Diffraction (XRD) result indicates that the synthesized undoped ZnO nanorods have wurtzite hexagonal structure without any impurities. It has been seen that the growth orientation of the prepared ZnO nanorods were (101). XRD analysis revealed that the nanorods having the crystallite size 49 nm. The Scanning Electron Microscopy (SEM) image confirmed the size and shape of these nanorods. The diameter of nanorods has been found that 1.52 µm to 1.61 µm and the lengthmore » of about 4.89 µm. It has also been found that at room temperature Ultra Violet Visible (UV-VIS) absorption band is around 355 nm (blue shifted as compared to bulk). Electroluminescence (EL) studies show that emission of light is possible at very small threshold voltage and increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.« less

Effect of high power CO2 and Yb:YAG laser radiation on the characteristics of TIG arc in atmospherical pressure argon and helium

NASA Astrophysics Data System (ADS)

Wu, Shikai; Xiao, Rongshi

2015-04-01

The effects of laser radiation on the characteristics of the DC tungsten inert gas (TIG) arc were investigated by applying a high power slab CO2 laser and a Yb:YAG disc laser. Experiment results reveal that the arc voltage-current curve shifts downwards, the arc column expands, and the arc temperature rises while the high power CO2 laser beam vertically interacts with the TIG arc in argon. With the increase of the laser power, the voltage-current curve of the arc shifts downwards more significantly, and the closer the laser beam impingement on the arc to the cathode, the more the decrease in arc voltage. Moreover, the arc column expansion and the arc temperature rise occur mainly in the region between the laser beam incident position and the anode. However, the arc characteristics hardly change in the cases of the CO2 laser-helium arc and YAG laser-arc interactions. The reason is that the inverse Bremsstrahlung absorption coefficients are greatly different due to the different electron densities of the argon and helium arcs and the different wave lengths of CO2 and YAG lasers.

Room-temperature voltage tunable phonon thermal conductivity via reconfigurable interfaces in ferroelectric thin films.

PubMed

Ihlefeld, Jon F; Foley, Brian M; Scrymgeour, David A; Michael, Joseph R; McKenzie, Bonnie B; Medlin, Douglas L; Wallace, Margeaux; Trolier-McKinstry, Susan; Hopkins, Patrick E

2015-03-11

Dynamic control of thermal transport in solid-state systems is a transformative capability with the promise to propel technologies including phononic logic, thermal management, and energy harvesting. A solid-state solution to rapidly manipulate phonons has escaped the scientific community. We demonstrate active and reversible tuning of thermal conductivity by manipulating the nanoscale ferroelastic domain structure of a Pb(Zr0.3Ti0.7)O3 film with applied electric fields. With subsecond response times, the room-temperature thermal conductivity was modulated by 11%.

A temperature monitor circuit with small voltage sensitivity using a topology-reconfigurable ring oscillator

NASA Astrophysics Data System (ADS)

Kishimoto, Tadashi; Ishihara, Tohru; Onodera, Hidetoshi

2018-04-01

In this paper, we propose a temperature monitor circuit that exhibits a small supply voltage sensitivity adopting a circuit topology of a reconfigurable ring oscillator. The circuit topology of the monitor is crafted such that the oscillation frequency is determined by the amount of subthreshold leakage current, which has an exponential dependence on temperature. Another important characteristic of the monitor is its small supply voltage sensitivity. The measured oscillation frequency of a test chip fabricated in a 65 nm CMOS process varies only 2.6% under a wide range of supply voltages from 0.4 to 1.0 V at room temperature. The temperature estimation error ranges from -0.3 to 0.4 °C over a temperature range of 10 to 100 °C.

Capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode

NASA Astrophysics Data System (ADS)

Gawri, Isha; Sharma, Mamta; Jindal, Silky; Singh, Harpreet; Tripathi, S. K.

2018-05-01

The present paper reports the capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode using chemical bath deposition method. Here anodic alumina layer prepared using electrolytic deposition method on Al substrate is used as insulating material. Using the capacitance-voltage variation at a fixed frequency, the different parameters such as Depletion layer width, Barrier height, Built-in voltage and Carrier concentration has been calculated at room temperature as well as at temperature range from 123 K to 323 K. With the increase in temperature the barrier height and depletion layer width follow a decreasing trend. Therefore, the capacitance-voltage characterization at different temperatures characterization provides strong evidence that the properties of MIS diode are primarily affected by diode parameters.

Ionic Polymer-Metal Composites (IPMCs) as Biomimetic Sensors, Actuators and Artificial Muscles: A Review

NASA Technical Reports Server (NTRS)

Shahinpoor, M.; Bar-Cohen, Y.; Simpson, J. O.; Smith, J.

1998-01-01

This paper presents an introduction to ionic polymer-metal composites and some mathematical modeling pertaining to them. It further discusses a number of recent findings in connection with ion-exchange polymer-metal composites (IPMCS) as biomimetic sensors and actuators. Strips of these composites can undergo large bending and flapping displacement if an electric field is imposed across their thickness. Thus, in this sense they are large motion actuators. Conversely by bending the composite strip, either quasi-statically or dynamically, a voltage is produced across the thickness of the strip. Thus, they are also large motion sensors. The output voltage can be calibrated for a standard size sensor and correlated to the applied loads or stresses. They can be manufactured and cut in any size and shape. In this paper first the sensing capability of these materials is reported. The preliminary results show the existence of a linear relationship between the output voltage and the imposed displacement for almost all cases. Furthermore, the ability of these IPMCs as large motion actuators and robotic manipulators is presented. Several muscle configurations are constructed to demonstrate the capabilities of these IPMC actuators. This paper further identifies key parameters involving the vibrational and resonance characteristics of sensors and actuators made with IPMCS. When the applied signal frequency varies, so does the displacement up to a critical frequency called the resonant frequency where maximum deformation is observed, beyond which the actuator response is diminished. A data acquisition system was used to measure the parameters involved and record the results in real time basis. Also the load characterizations of the IPMCs were measured and it was shown that these actuators exhibit good force to weight characteristics in the presence of low applied voltages. Finally reported are the cryogenic properties of these muscles for potential utilization in an outer space environment of a few Torrs and temperatures of the order of - 140 degrees Celsius. These muscles are shown to work quite well in such harsh cryogenic environments and thus present a great potential as sensors and actuators that can operate at cryogenic temperatures.

Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion

NASA Astrophysics Data System (ADS)

Kocyigit, Adem; Orak, İkram; Turut, Abdulmecit

2018-03-01

Owing to importance of ZnO in electronics, Au/ZnO/n-type Si device was fabricated to investigate its dielectric properties by aid of capacitance-conductance-voltage measurements. While the ZnO thin film layer on the n-type Si was formed by atomic layer deposition (ALD) technique, the rectifying and ohmic contacts were obtained by thermal evaporation. The surface morphology of ZnO thin film was characterized using atomic force microscopy (AFM) to show its compatibility as interfacial layer in the Au/ZnO/n-type Si device. The dielectric properties of the device were examined in terms of dielectric parameters such as dielectric constant (ɛ‧), dielectric loss (ɛ″), loss tangent (tan δ), the real and imaginary parts of electric modulus (M ‧ and M ″) and ac electrical conductivity (σ) depending on applied voltages (from -1 to 2 V) and temperatures (from 140 K to 360 K) ranges. The results have revealed that interfacial polarization and charge carriers are the important parameters to affect the dielectric properties of the device with changing temperature. The device can be used at wide range temperatures for diode applications.

Modeling of Sheath Ion-Molecule Reactions in Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Hash, David B.; Govindan, T. R.; Meyyappan, M.

2004-01-01

In many plasma simulations, ion-molecule reactions are modeled using ion energy independent reaction rate coefficients that are taken from low temperature selected-ion flow tube experiments. Only exothermic or nearly thermoneutral reactions are considered. This is appropriate for plasma applications such as high-density plasma sources in which sheaths are collisionless and ion temperatures 111 the bulk p!asma do not deviate significantly from the gas temperature. However, for applications at high pressure and large sheath voltages, this assumption does not hold as the sheaths are collisional and ions gain significant energy in the sheaths from Joule heating. Ion temperatures and thus reaction rates vary significantly across the discharge, and endothermic reactions become important in the sheaths. One such application is plasma enhanced chemical vapor deposition of carbon nanotubes in which dc discharges are struck at pressures between 1-20 Torr with applied voltages in the range of 500-700 V. The present work investigates The importance of the inclusion of ion energy dependent ion-molecule reaction rates and the role of collision induced dissociation in generating radicals from the feedstock used in carbon nanotube growth.

Thermally Stable, Piezoelectric and Pyroelectric Polymeric Substrates and Method Relating Thereto

NASA Technical Reports Server (NTRS)

Simpson, Joycelyn O. (Inventor); St.Clair, Terry L. (Inventor)

1995-01-01

Production of an electric voltage in response to mechanical excitation (piezoelectricity) or thermal excitation (pyroelectricity) requires a material to have a preferred dipole orientation in its structure. This preferred orientation or polarization occurs naturally in some crystals such as quartz and can be induced into some ceramic and polymeric materials by application of strong electric or mechanical fields. For some materials, a combination of mechanical and electrical orientation is necessary to completely polarize the material. The only commercially available piezoelectric polymer is poly(vinylidene fluoride) (PVF2). However, this polymer has material and process limitations which prohibit its use in numerous device applications where thermal stability is a requirement. By the present invention, thermally stable, piezoelectric and pyroelectric polymeric substrates were prepared from polymers having a softening temperature greater than 1000C. A metal electrode material is deposited onto the polymer substrate and several electrical leads are attached to it. The polymer substrate is heated in a low dielectric medium to enhance molecular mobility of the polymer chains. A voltage is then applied to the polymer substrate inducing polarization. The voltage is then maintained while the polymer substrate is cooled 'freezing in' the molecular orientation. The novelty of the invention resides in the process of preparing the piezoelectric and pyroelectric polymeric substrate. The nonobviousness of the invention is found in heating the polymeric substrate in a low dielectric medium while applying a voltage.

Analysis of Solar Cell Efficiency for Venus Atmosphere and Surface Missions

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Haag, Emily

2013-01-01

A simplified model of solar power in the Venus environment is developed, in which the solar intensity, solar spectrum, and temperature as a function of altitude is applied to a model of photovoltaic performance, incorporating the temperature and intensity dependence of the open-circuit voltage and the temperature dependence of the bandgap and spectral response of the cell. We use this model to estimate the performance of solar cells for both the surface of Venus and for atmospheric probes at altitudes from the surface up to 60 km. The model shows that photovoltaic cells will produce power even at the surface of Venus.

Report on Contract W911NF-05-1-0339 (Clarkson University)

DTIC Science & Technology

2012-11-30

voltammetry and impedance spectroscopy: voltage dependent parameters of a silicon solar cell under controlled illumination and temperature, Energy...voltammetry for quantitative evaluation of temperature and voltage dependent parameters of a silicon solar cell , Solar Energy, (11 2011): 0. doi: 10.1016...characterization of silicon solar cells in the electro-analytical approach: Combined measurements of temperature and voltage dependent electrical

Use of multi-functional flexible micro-sensors for in situ measurement of temperature, voltage and fuel flow in a proton exchange membrane fuel cell.

PubMed

Lee, Chi-Yuan; Chan, Pin-Cheng; Lee, Chung-Ju

2010-01-01

Temperature, voltage and fuel flow distribution all contribute considerably to fuel cell performance. Conventional methods cannot accurately determine parameter changes inside a fuel cell. This investigation developed flexible and multi-functional micro sensors on a 40 μm-thick stainless steel foil substrate by using micro-electro-mechanical systems (MEMS) and embedded them in a proton exchange membrane fuel cell (PEMFC) to measure the temperature, voltage and flow. Users can monitor and control in situ the temperature, voltage and fuel flow distribution in the cell. Thereby, both fuel cell performance and lifetime can be increased.

Electrical properties of fullerenol C60(OH)10/Au interface

NASA Astrophysics Data System (ADS)

Sakaino, Masamichi; Sun, Yong; Morimoto, Fumio

2014-01-01

Electrical properties of the C60(OH)10/Au contact have been studied by measuring its current-voltage characteristics in the temperature range of 300-500 K. The Schottky barrier of the C60(OH)10/Au contact was confirmed to be 0.70±0.02 eV from Arrhenius plots of the current-voltage characteristics measured at various bias voltages as well as various preparation conditions of the C60(OH)10 material. Significant effect of the applied electric field on the barrier height has not been observed in the range of 0.1-2.0 MVm-1. The effects of both the charge transfer from C60 cage to OH groups and the crystallinity of the C60(OH)10 material on the Schottky barrier were discussed on the basis of x-ray photoemission spectroscopy and x-ray diffraction analyses.

Radio frequency-assisted fast superconducting switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovyov, Vyacheslav; Li, Qiang

A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET maymore » be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.« less

Instability of Insulators near Quantum Phase Transitions

NASA Astrophysics Data System (ADS)

Doron, A.; Tamir, I.; Levinson, T.; Ovadia, M.; Sacépé, B.; Shahar, D.

2017-12-01

Thin films of amorphous indium oxide undergo a magnetic field driven superconducting to insulator quantum phase transition. In the insulating phase, the current-voltage characteristics show large current discontinuities due to overheating of electrons. We show that the onset voltage for the discontinuities vanishes as we approach the quantum critical point. As a result, the insulating phase becomes unstable with respect to any applied voltage making it, at least experimentally, immeasurable. We emphasize that unlike previous reports of the absence of linear response near quantum phase transitions, in our system, the departure from equilibrium is discontinuous. Because the conditions for these discontinuities are satisfied in most insulators at low temperatures, and due to the decay of all characteristic energy scales near quantum phase transitions, we believe that this instability is general and should occur in various systems while approaching their quantum critical point. Accounting for this instability is crucial for determining the critical behavior of systems near the transition.

Experimental investigation of SDBD plasma actuator driven by AC high voltage with a superimposed positive pulse bias voltage

NASA Astrophysics Data System (ADS)

Qi, Xiao-Hua; Yan, Hui-Jie; Yang, Liang; Hua, Yue; Ren, Chun-Sheng

2017-08-01

In this work, a driven voltage consisting of AC high voltage with a superimposed positive pulse bias voltage ("AC+ Positive pulse bias" voltage) is adopted to study the performance of a surface dielectric barrier discharge plasma actuator under atmospheric conditions. To compare the performance of the actuator driven by single-AC voltage and "AC+ Positive pulse bias" voltage, the actuator-induced thrust force and power consumption are measured as a function of the applied AC voltage, and the measured results indicate that the thrust force can be promoted significantly after superimposing the positive pulse bias voltage. The physical mechanism behind the thrust force changes is analyzed by measuring the optical properties, electrical characteristics, and surface potential distribution. Experimental results indicate that the glow-like discharge in the AC voltage half-cycle, next to the cycle where a bias voltage pulse has been applied, is enhanced after applying the positive pulse bias voltage, and this perhaps is the main reason for the thrust force increase. Moreover, surface potential measurement results reveal that the spatial electric field formed by the surface charge accumulation after positive pulse discharge can significantly affect the applied external electric field, and this perhaps can be responsible for the experimental phenomenon that the decrease of thrust force is delayed by pulse bias voltage action after the filament discharge occurs in the glow-like discharge region. The schlieren images further verify that the actuator-induced airflow velocity increases with the positive pulse voltage.

Joule Heating and Thermal Denaturation of Proteins in Nano-ESI Theta Tips

NASA Astrophysics Data System (ADS)

Zhao, Feifei; Matt, Sarah M.; Bu, Jiexun; Rehrauer, Owen G.; Ben-Amotz, Dor; McLuckey, Scott A.

2017-10-01

Electro-osmotically induced Joule heating in theta tips and its effect on protein denaturation were investigated. Myoglobin, equine cytochrome c, bovine cytochrome c, and carbonic anhydrase II solutions were subjected to electro-osmosis in a theta tip and all of the proteins were denatured during the process. The extent of protein denaturation was found to increase with the applied square wave voltage and electrolyte concentration. The solution temperature at the end of a theta tip was measured directly by Raman spectroscopy and shown to increase with the square wave voltage, thereby demonstrating the effect of Joule heating through an independent method. The electro-osmosis of a solution comprised of myoglobin, bovine cytochrome c, and ubiquitin demonstrated that the magnitude of Joule heating that causes protein denaturation is positively correlated with protein melting temperature. This allows for a quick determination of a protein's relative thermal stability. This work establishes a fast, novel method for protein conformation manipulation prior to MS analysis and provides a temperature-controllable platform for the study of processes that take place in solution with direct coupling to mass spectrometry. [Figure not available: see fulltext.

HiPEP Ion Optics System Evaluation Using Gridlets

NASA Technical Reports Server (NTRS)

Willliams, John D.; Farnell, Cody C.; Laufer, D. Mark; Martinez, Rafael A.

2004-01-01

Experimental measurements are presented for sub-scale ion optics systems comprised of 7 and 19 aperture pairs with geometrical features that are similar to the HiPEP ion optics system. Effects of hole diameter and grid-to-grid spacing are presented as functions of applied voltage and beamlet current. Recommendations are made for the beamlet current range where the ion optics system can be safely operated without experiencing direct impingement of high energy ions on the accelerator grid surface. Measurements are also presented of the accelerator grid voltage where beam plasma electrons backstream through the ion optics system. Results of numerical simulations obtained with the ffx code are compared to both the impingement limit and backstreaming measurements. An emphasis is placed on identifying differences between measurements and simulation predictions to highlight areas where more research is needed. Relatively large effects are observed in simulations when the discharge chamber plasma properties and ion optics geometry are varied. Parameters investigated using simulations include the applied voltages, grid spacing, hole-to-hole spacing, doubles-to-singles ratio, plasma potential, and electron temperature; and estimates are provided for the sensitivity of impingement limits on these parameters.

Soft-short management and remediation in 10-year-old NiCds in Geo orbit

NASA Technical Reports Server (NTRS)

Flordeliza, Nicanor A.; Bounds, Ronald W.

1996-01-01

After 10 years in Geo orbit, during the spring 1993 eclipse season, soft shorts occurred in cells of two of the three batteries on the F2R spacecraft On battery #1, the cell soft short turned suddenly into a hard short; the resulting sudden 1.2V fall in battery voltage and rise in temperature was observed via telemetry. On battery #3, the deleterious impact of its soft short increased day by day, manifesting itself as a drop in battery voltage part-way through each eclipse, causing high loading on the remaining good battery. This paper reports how by planned charge management, including applying (against-the-book) overcharge ratios (C/D) exceeding 1.75, the battery #3 cell soft short was 'built down' until the cell voltage fade ceased. The problem with the battery #3 soft-shorted cell was fought with partial success throughout the latter half of the fall 93 season, and the lessons learned were applied to alleviate the problem during the spring 94 and fall 94 eclipse seasons. The life of the spacecraft was successfully prolonged until it was retired in March 1995.

Imaging diagnostics of pulsed plasma discharges in saline generated with various sharp pin powered electrodes

NASA Astrophysics Data System (ADS)

Asimakoulas, L.; Karim, M. L.; Dostal, L.; Krcma, F.; Graham, W. G.; Field, T. A.

2016-09-01

Plasmas formed by 1 ms pulses of between 180 and 300 V applied to sharp pin-like electrodes immersed in saline solution have been imaged with a Photron SA-X2 fast framing camera and an Andor iStar 510 ICCD camera. Stainless steel, Tungsten and Gold electrodes were investigated with tip diameters of 30 μm, 1 μm and < 1 μ m respectively. As previously observed, a vapour layer forms around the electrode prior to plasma ignition. For gold and stainless steel lower voltages were required to minimize electrode damage. Preliminary anlaysis indicates at lower voltages for all tips the fast framing results show that light emission is normally centred on a single small volume, which appears to move about, but remains close to the tip. In the case of Tungsten with higher voltages or longer pulses the tip of the needle can heat up to incandescent temperatures. At higher voltages shock wave fronts appear to be observed as the vapour layer collapses at the end of the voltage pulse. Backlighting and no lighting to observe bubble/vapour layer formation and emission due to plasma formation were employed. Sometimes at higher voltages a thicker vapour layer engulfs the tip and no plasma emission/current is observed.

Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications

NASA Astrophysics Data System (ADS)

Khan, J.; Lingalugari, M.; Al-Amoody, F.; Jain, F.

2013-11-01

As conventional memories approach scaling limitations, new storage methods must be utilized to increase Si yield and produce higher on-chip memory density. Use of II-VI Zn0.56Cd0.44Se quantum dots (QDs) is compatible with epitaxial gate insulators such as ZnS-ZnMgS. Voltage-dependent charging effects in cladded Zn0.56Cd0.44Se QDs are presented in a conventional metal-oxide-semiconductor capacitor structure. Charge storage capabilities in Si and ZnMgS QDs have been reported by various researchers; this work is focused on II-VI material Zn0.56Cd0.44Se QDs nucleated using photoassisted microwave plasma metalorganic chemical vapor deposition. Using capacitance-voltage hysteresis characterization, the multistep charging and discharging capabilities of the QDs at room temperature are presented. Three charging states are presented within a 10 V charging voltage range. These characteristics exemplify discrete charge states in the QD layer, perfect for multibit, QD-functionalized high-density memory applications. Multiple charge states with low operating voltage provide device characteristics that can be used for multibit storage by allowing varying charges to be stored in a QD layer based on the applied "write" voltage.

Study of the photovoltaic effect in thin film barium titanate

NASA Technical Reports Server (NTRS)

Grannemann, W. W.; Dharmadhikari, V. S.

1981-01-01

The photoelectric effect in structures consisting of metal deposited barium titanate film silicon is described. A radio frequency sputtering technique is used to deposit ferroelectric barium titantate films on silicon and quartz. Film properties are measured and correlated with the photoelectric effect characteristics of the films. It was found that to obtain good quality pin hole free films, it is necessary to reduce the substrate temperature during the last part of the deposition. The switching ability of the device with internal applied voltage is improved when applied with a ferroelectric memory device.

Low-power low-voltage superior-order curvature corrected voltage reference

NASA Astrophysics Data System (ADS)

Popa, Cosmin

2010-06-01

A complementary metal oxide semiconductor (CMOS) voltage reference with a logarithmic curvature-correction will be presented. The first-order compensation is realised using an original offset voltage follower (OVF) block as a proportional to absolute temperature (PTAT) voltage generator, with the advantages of reducing the silicon area and of increasing accuracy by replacing matched resistors with matched transistors. The new logarithmic curvature-correction technique will be implemented using an asymmetric differential amplifier (ADA) block for compensating the logarithmic temperature dependent term from the first-order compensated voltage reference. In order to increase the circuit accuracy, an original temperature-dependent current generator will be designed for computing the exact type of the implemented curvature-correction. The relatively small complexity of the current squarer allows an important increasing of the circuit accuracy that could be achieved by increasing the current generator complexity. As a result of operating most of the MOS transistors in weak inversion, the original proposed voltage reference could be valuable for low-power applications. The circuit is implemented in 0.35 μm CMOS technology and consumes only 60μA for t = 25°C, being supplied at the minimal supply voltage V DD = 1.75V. The temperature coefficient of the reference voltage is 8.7 ppm/°C, while the line sensitivity is 0.75 mV/V for a supply voltage between 1.75 V and 7 V.

Large negative differential resistance in graphene nanoribbon superlattices

NASA Astrophysics Data System (ADS)

Tseng, P.; Chen, C. H.; Hsu, S. A.; Hsueh, W. J.

2018-05-01

A graphene nanoribbon superlattice with a large negative differential resistance (NDR) is proposed. Our results show that the peak-to-valley ratio (PVR) of the graphene superlattices can reach 21 at room temperature with bias voltages between 90-220 mV, which is quite large compared with the one of traditional graphene-based devices. It is found that the NDR is strongly influenced by the thicknesses of the potential barrier. Therefore, the NDR effect can be optimized by designing a proper barrier thickness. The large NDR effect can be attributed to the splitting of the gap in transmission spectrum (segment of Wannier-Stark ladder) with larger thicknesses of barrier when the applied voltage increases.

Electrical aging markers for EPR-based low-voltage cable insulation wiring of nuclear power plants

NASA Astrophysics Data System (ADS)

Verardi, L.; Fabiani, D.; Montanari, G. C.

2014-01-01

This paper presents results of electrical property measurements on EPR-based insulations of low-voltage power cables used in nuclear power plants. The specimens underwent accelerated aging through the simultaneous application of high temperature and gamma-radiation. Mechanical properties and the dielectric response at different frequencies were investigated. Results showed significant variation of the electrical and mechanical properties of aged cables at low frequencies, i.e. lower than 10-2 Hz. In particular, the real and imaginary parts of permittivity increase with aging time, accumulated dose and stress levels applied showing good correlation with elongation at break, which decreases as a function of extent of insulation aging.

Depinning of the Bragg glass in a point disordered model superconductor.

PubMed

Olsson, Peter

2007-03-02

We perform simulations of the three-dimensional frustrated anisotropic XY model with point disorder as a model of a type-II superconductor with quenched point pinning in a magnetic field and a weak applied current. Using resistively shunted junction dynamics, we find a critical current I_{c} that separates a creep region with immeasurably low voltage from a region with a voltage V proportional, variant(I-I_{c}) and also identify the mechanism behind this behavior. It also turns out that data at fixed disorder strength may be collapsed by plotting V versus TI, where T is the temperature, though the reason for this behavior as yet not is fully understood.

Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode.

PubMed

Chen, Horng-Shyang; Liu, Zhan Hui; Shih, Pei-Ying; Su, Chia-Ying; Chen, Chih-Yen; Lin, Chun-Han; Yao, Yu-Feng; Kiang, Yean-Woei; Yang, C C

2014-04-07

A reverse-biased voltage is applied to either device in the vertical configuration of two light-emitting diodes (LEDs) grown on patterned and flat Si (110) substrates with weak and strong quantum-confined Stark effects (QCSEs), respectively, in the InGaN/GaN quantum wells for independently controlling the applied voltage across and the injection current into the p-i-n junction in the lateral configuration of LED operation. The results show that more carrier supply is needed in the LED of weaker QCSE to produce a carrier screening effect for balancing the potential tilt in increasing the forward-biased voltage, when compared with the LED of stronger QCSE. The small spectral shift range in increasing injection current in the LED of weaker QCSE is attributed not only to the weaker QCSE, but also to its smaller device resistance such that a given increment of applied voltage leads to a larger increment of injection current. From a viewpoint of practical application in LED operation, by applying a reverse-biased voltage in the vertical configuration, the applied voltage and injection current in the lateral configuration can be independently controlled by adjusting the vertical voltage for keeping the emission spectral peak fixed.

Investigation on the Micro-Discharge Characteristics of Dielectric Barrier Discharge in a Needle-Plate Geometry

NASA Astrophysics Data System (ADS)

Li, Xuechen; Niu, Dongying; Jia, Pengying; Zhao, Na; Yuan, Ning

2011-04-01

In this study, a dielectric barrier discharge device with needle-plate electrodes was used to investigate the characteristics of the micro-discharge in argon at one atmospheric pressure by an optical method. The results show that there are two discharge modes in the dielectric barrier discharge, namely corona mode and filamentary mode. The corona discharge only occurs in the vicinity of the needle tip when the applied voltage is very low. However, the filamentary discharge mode can occur, and micro-discharge bridges the two electrodes when the applied voltage reaches a certain value. The extended area of micro-discharge on the dielectric plate becomes larger with the increase in applied voltage or decrease in gas pressure. The variance of the light emission waveforms is studied as a function of the applied voltage. Results show that very narrow discharge pulse only appears at the negative half cycle of the applied voltage in the corona discharge mode. However, broad hump (about several microseconds) can be discerned at both the negative half cycle and the positive half cycle for a high voltage in the filamentary mode. Furthermore, the inception voltage decreases and the width of the discharge hump increases with the increase in applied voltage. These experimental phenomena can be explained qualitatively by analyzing the discharge mechanism.

Analysis of partial discharge activity by a conducting particle in liquid nitrogen under AC voltages adopting UHF technique

NASA Astrophysics Data System (ADS)

Sarathi, R.; Giridhar, A. V.; Sethupathi, K.

2010-01-01

Liquid nitrogen (LN 2) is used as an insulant as well as coolant in high temperature superconducting power equipments. Particle contamination in liquid nitrogen is one of the major cause for formation of partial discharges during operation. An attempt has been made in the present study to understand the feasibility of using Ultra High Frequency (UHF) sensors for identification of partial discharge (PD) formed due to particle movement in liquid nitrogen under AC voltages. It is observed that the partial discharge formed in LN 2 radiates UHF signal. The results of the study indicate that the conventional partial discharge measurement and UHF peak amplitude measurement have direct correlation. The Phase Resolved Partial Discharge (PRPD) analysis indicates that the partial discharge formed due to particle movement occurs in the entire phase windows of the AC voltage. The PD magnitude increases with increase in applied voltage. The frequency content of UHF signal generated due to particle movement in liquid nitrogen under AC voltages lies in the range of 0.5-1.5 GHz. The UHF sensor output signal analyzed using spectrum analyzer by operating it in zero-span mode, indicates that burst type PD occurs due to particle movement.

Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice.

PubMed

Yin, Zhizhen; Song, Helun; Zhang, Yaohui; Ruiz-García, Miguel; Carretero, Manuel; Bonilla, Luis L; Biermann, Klaus; Grahn, Holger T

2017-01-01

Noise-enhanced chaos in a doped, weakly coupled GaAs/Al_{0.45}Ga_{0.55}As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling model. When external noise is added, both the measured and simulated current-versus-time traces contain irregularly spaced spikes for particular applied voltages, which separate a regime of periodic current oscillations from a region of no current oscillations at all. In the voltage region without current oscillations, the electric-field profile consist of a low-field domain near the emitter contact separated by a domain wall consisting of a charge accumulation layer from a high-field regime closer to the collector contact. With increasing noise amplitude, spontaneous chaotic current oscillations appear over a wider bias voltage range. For these bias voltages, the domain boundary between the two electric-field domains becomes unstable and very small current or voltage fluctuations can trigger the domain boundary to move toward the collector and induce chaotic current spikes. The experimentally observed features are qualitatively very well reproduced by the simulations. Increased noise can consequently enhance chaotic current oscillations in semiconductor superlattices.

Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice

NASA Astrophysics Data System (ADS)

Yin, Zhizhen; Song, Helun; Zhang, Yaohui; Ruiz-García, Miguel; Carretero, Manuel; Bonilla, Luis L.; Biermann, Klaus; Grahn, Holger T.

2017-01-01

Noise-enhanced chaos in a doped, weakly coupled GaAs /Al0.45Ga0.55As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling model. When external noise is added, both the measured and simulated current-versus-time traces contain irregularly spaced spikes for particular applied voltages, which separate a regime of periodic current oscillations from a region of no current oscillations at all. In the voltage region without current oscillations, the electric-field profile consist of a low-field domain near the emitter contact separated by a domain wall consisting of a charge accumulation layer from a high-field regime closer to the collector contact. With increasing noise amplitude, spontaneous chaotic current oscillations appear over a wider bias voltage range. For these bias voltages, the domain boundary between the two electric-field domains becomes unstable and very small current or voltage fluctuations can trigger the domain boundary to move toward the collector and induce chaotic current spikes. The experimentally observed features are qualitatively very well reproduced by the simulations. Increased noise can consequently enhance chaotic current oscillations in semiconductor superlattices.

Current-voltage characteristics of manganite-titanite perovskite junctions.

PubMed

Ifland, Benedikt; Peretzki, Patrick; Kressdorf, Birte; Saring, Philipp; Kelling, Andreas; Seibt, Michael; Jooss, Christian

2015-01-01

After a general introduction into the Shockley theory of current voltage (J-V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite-titanate p-n heterojunctions made of n-doped SrTi1- y Nb y O3, y = 0.002 and p-doped Pr1- x Ca x MnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC) in a thin cross plane lamella of the junction. In the J-V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER) effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron-polaron hole-polaron pair generation and separation at the interface.

Current–voltage characteristics of manganite–titanite perovskite junctions

PubMed Central

Ifland, Benedikt; Peretzki, Patrick; Kressdorf, Birte; Saring, Philipp; Kelling, Andreas; Seibt, Michael

2015-01-01

Summary After a general introduction into the Shockley theory of current voltage (J–V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite–titanate p–n heterojunctions made of n-doped SrTi1− yNbyO3, y = 0.002 and p-doped Pr1− xCaxMnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC) in a thin cross plane lamella of the junction. In the J–V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER) effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron–polaron hole–polaron pair generation and separation at the interface. PMID:26199851

Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr

We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasingmore » temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.« less

Research on the Error Characteristics of a 110 kV Optical Voltage Transformer under Three Conditions: In the Laboratory, Off-Line in the Field and During On-Line Operation

PubMed Central

Xiao, Xia; Hu, Haoliang; Xu, Yan; Lei, Min; Xiong, Qianzhu

2016-01-01

Optical voltage transformers (OVTs) have been applied in power systems. When performing accuracy performance tests of OVTs large differences exist between the electromagnetic environment and the temperature variation in the laboratory and on-site. Therefore, OVTs may display different error characteristics under different conditions. In this paper, OVT prototypes with typical structures were selected to be tested for the error characteristics with the same testing equipment and testing method. The basic accuracy, the additional error caused by temperature and the adjacent phase in the laboratory, the accuracy in the field off-line, and the real-time monitoring error during on-line operation were tested. The error characteristics under the three conditions—laboratory, in the field off-line and during on-site operation—were compared and analyzed. The results showed that the effect of the transportation process, electromagnetic environment and the adjacent phase on the accuracy of OVTs could be ignored for level 0.2, but the error characteristics of OVTs are dependent on the environmental temperature and are sensitive to the temperature gradient. The temperature characteristics during on-line operation were significantly superior to those observed in the laboratory. PMID:27537895

Research on the Error Characteristics of a 110 kV Optical Voltage Transformer under Three Conditions: In the Laboratory, Off-Line in the Field and During On-Line Operation.

PubMed

Xiao, Xia; Hu, Haoliang; Xu, Yan; Lei, Min; Xiong, Qianzhu

2016-08-16

Optical voltage transformers (OVTs) have been applied in power systems. When performing accuracy performance tests of OVTs large differences exist between the electromagnetic environment and the temperature variation in the laboratory and on-site. Therefore, OVTs may display different error characteristics under different conditions. In this paper, OVT prototypes with typical structures were selected to be tested for the error characteristics with the same testing equipment and testing method. The basic accuracy, the additional error caused by temperature and the adjacent phase in the laboratory, the accuracy in the field off-line, and the real-time monitoring error during on-line operation were tested. The error characteristics under the three conditions-laboratory, in the field off-line and during on-site operation-were compared and analyzed. The results showed that the effect of the transportation process, electromagnetic environment and the adjacent phase on the accuracy of OVTs could be ignored for level 0.2, but the error characteristics of OVTs are dependent on the environmental temperature and are sensitive to the temperature gradient. The temperature characteristics during on-line operation were significantly superior to those observed in the laboratory.

Nanoscale thermal imaging of VO2 via Poole-Frenkel conduction

NASA Astrophysics Data System (ADS)

Spitzig, Alyson; Hoffman, Jason D.; Pivonka, Adam E.; Mickalide, Harry; Frenzel, Alex; Kim, Jeehoon; Ko, Changhyun; Zhou, You; O'Connor, Kevin; Hudson, Eric W.; Ramanathan, Shriram; Hoffman, Jennifer E.

We present a novel method for nanoscale thermal imaging of insulating thin films. We demonstrate this method on VO2, which undergoes a sharp insulator-to-metal transition at 340 K. We sweep the voltage applied to a conducting atomic force microscope tip in contact mode at room temperature and measure the resultant current through a VO2 film. The Poole-Frenkel (PF) conduction mechanism, which dominates in the insulating state of VO2, is fit to extract the local temperature of the film using fundamental constants and known film properties. We measure the local electric field and temperature immediately preceding the insulator-to-metal transition in VO2 to determine whether the transition can be triggered by an applied electric field alone. We calculate an average temperature of 334 +/- 5 K, implying that Joule heating has locally warmed the sample very close to the transition temperature. Our thermometry technique opens up the possibility to measure the local temperature of any film dominated by the PF conduction mechanism, and presents the opportunity to extend our technique to other conduction mechanisms. Canada Excellence Research Chair program and NSERC - CGSM.

System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

NASA Technical Reports Server (NTRS)

Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

1993-01-01

A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

Characterization of zero-bias microwave diode power detectors at cryogenic temperature.

PubMed

Giordano, Vincent; Fluhr, Christophe; Dubois, Benoît; Rubiola, Enrico

2016-08-01

We present the characterization of commercial tunnel diode low-level microwave power detectors at room and cryogenic temperatures. The sensitivity as well as the output voltage noise of the tunnel diodes is measured as functions of the applied microwave power. We highlight strong variations of the diode characteristics when the applied microwave power is higher than a few microwatts. For a diode operating at 4 K, the differential gain increases from 1000 V/W to about 4500 V/W when the power passes from -30 dBm to -20 dBm. The diode white noise floor is equivalent to a Noise Equivalent Power of 0.8 pW/Hz and 8 pW/Hz at 4 K and 300 K, respectively. Its flicker noise is equivalent to a relative amplitude noise power spectral density Sα(1 Hz) = - 120 dB/Hz at 4 K. Flicker noise is 10 dB higher at room temperature.

Ion funnel device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ibrahim, Yehia M.; Chen, Tsung-Chi; Harrer, Marques B.

2017-11-21

An ion funnel device is disclosed. A first pair of electrodes is positioned in a first direction. A second pair of electrodes is positioned in a second direction. The device includes an RF voltage source and a DC voltage source. A RF voltage with a superimposed DC voltage gradient is applied to the first pair of electrodes, and a DC voltage gradient is applied to the second pair of electrodes.

Use of Multi-Functional Flexible Micro-Sensors for in situ Measurement of Temperature, Voltage and Fuel Flow in a Proton Exchange Membrane Fuel Cell

PubMed Central

Lee, Chi-Yuan; Chan, Pin-Cheng; Lee, Chung-Ju

2010-01-01

Temperature, voltage and fuel flow distribution all contribute considerably to fuel cell performance. Conventional methods cannot accurately determine parameter changes inside a fuel cell. This investigation developed flexible and multi-functional micro sensors on a 40 μm-thick stainless steel foil substrate by using micro-electro-mechanical systems (MEMS) and embedded them in a proton exchange membrane fuel cell (PEMFC) to measure the temperature, voltage and flow. Users can monitor and control in situ the temperature, voltage and fuel flow distribution in the cell. Thereby, both fuel cell performance and lifetime can be increased. PMID:22163545

Transparent and Flexible Zinc Tin Oxide Thin Film Transistors and Inverters using Low-pressure Oxygen Annealing Process

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Kim, Jiwan; Oh, Min Suk

2018-05-01

We report on the transparent and flexible enhancement-load inverters which consist of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated at low process temperature. To control the electrical characteristics of oxide TFTs by oxygen vacancies, we applied low-pressure oxygen rapid thermal annealing (RTA) process to our devices. When we annealed the ZTO TFTs in oxygen ambient of 2 Torr, they showed better electrical characteristics than those of the devices annealed in the air ambient of 760 Torr. To realize oxide thin film transistor and simple inverter circuits on flexible substrate, we annealed the devices in O2 of 2 Torr at 150° C and could achieve the decent electrical properties. When we used transparent conductive oxide electrodes such as indium zinc oxide (IZO) and indium tin oxide (ITO), our transparent and flexible inverter showed the total transmittance of 68% in the visible range and the voltage gain of 5. And the transition voltage in voltage transfer curve was located well within the range of operation voltage.

Giant piezoelectric voltage coefficient in grain-oriented modified PbTiO 3 material

DOE PAGES

Yan, Yongke; Zhou, Jie E.; Maurya, Deepam; ...

2016-10-11

A rapid surge in the research on piezoelectric sensors is occurring with the arrival of the Internet of Things. Single-phase oxide piezoelectric materials with giant piezoelectric voltage coefficient (g, induced voltage under applied stress) and high Curie temperature (T c) are crucial towards providing desired performance for sensing, especially under harsh environmental conditions. Here, we report a grain-oriented (with 95% <001> texture) modified PbTiO 3 ceramic that has a high T c (364°C) and an extremely large g 33 (115 × 10 -3 Vm N -1) in comparison with other known single-phase oxide materials. Our results reveal that self-polarization duemore » to grain orientation along the spontaneous polarization direction plays an important role in achieving large piezoelectric response in a domain motion-confined material. Finally, the phase field simulations confirm that the large piezoelectric voltage coefficient g 33 originates from maximized piezoelectric strain coefficient d 33 and minimized dielectric permittivity ε 33 in [001]-textured PbTiO 3 ceramics where domain wall motions are absent.« less

Giant piezoelectric voltage coefficient in grain-oriented modified PbTiO3 material

PubMed Central

Yan, Yongke; Zhou, Jie E.; Maurya, Deepam; Wang, Yu U.; Priya, Shashank

2016-01-01

A rapid surge in the research on piezoelectric sensors is occurring with the arrival of the Internet of Things. Single-phase oxide piezoelectric materials with giant piezoelectric voltage coefficient (g, induced voltage under applied stress) and high Curie temperature (Tc) are crucial towards providing desired performance for sensing, especially under harsh environmental conditions. Here, we report a grain-oriented (with 95% <001> texture) modified PbTiO3 ceramic that has a high Tc (364 °C) and an extremely large g33 (115 × 10−3 Vm N−1) in comparison with other known single-phase oxide materials. Our results reveal that self-polarization due to grain orientation along the spontaneous polarization direction plays an important role in achieving large piezoelectric response in a domain motion-confined material. The phase field simulations confirm that the large piezoelectric voltage coefficient g33 originates from maximized piezoelectric strain coefficient d33 and minimized dielectric permittivity ɛ33 in [001]-textured PbTiO3 ceramics where domain wall motions are absent. PMID:27725634

Fast Turn-Off Times Observed in Experimental 4H SiC Thyristors

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

2006-01-01

Room temperature measurements of the turn-off time (t(sub q)) are reported for several packaged, npnp developmental power thyristors based on 4H-type SiC and rated 400 V, 2 A. Turn-off is effected by a 50 V pulse of applied reverse voltage, from a state of a steady 1 A forward current. Plots of t(sub q) against the ramp rate (dV(sub AK)/dt) of reapplied forward voltage are presented for preset values of limiting anode-to-cathode voltage (V(sub AK,max)). The lowest t(sub q) measured was about 180 ns. A rapid rise of these t(sub q) curves was observed for values of V(sub AK,max) that are only about a fifth of the rated voltage, whereas comparative t(sub q) plots for a commercial, fast turn-off, Si-based thyristor at a proportionately reduced V(sub AK,max) showed no such behavior. Hence these SiC thyristors may have problems arising from material defects or surface passivation. The influence the R-C-D gate bypass circuit that was used is briefly discussed.

Effect of Light Intensity and Temperature on the Current Voltage Characteristics of Al/ SY/ p- Si Organic-Inorganic Heterojunction

NASA Astrophysics Data System (ADS)

Imer, Arife Gencer; Ocak, Yusuf Selim

2016-10-01

An organic-inorganic contact was fabricated by forming a thin film of sunset yellow dye ( SY) on a p- Si wafer. The device showed a good rectification property, and the sunset yellow thin film modified the barrier height (Φb) of Al/ p- Si contact by influencing the space charge region. The heterojunction had a strong response to the different illumination intensities and showed that it can be suitable for photodiode applications. The I- V measurements of the device were also applied in the temperature range of 100-500 K. It was seen that characteristic parameters of the device were strongly dependent upon temperature. While the value of Φb increased, the ideality factor ( n) decreased with the increase in temperature. This variation was attributed to spatial inhomogeneity at the interface. The Norde function was used to determine the temperature-dependent series resistance and Φb values, and there was a good agreement with that of ln I- V data. The values of the Richardson constant ( A*) and mean Φb were determined as 29.47 Acm-2 K-2 by means of a modified activation energy plot, matching with a theoretical one, and 1.032 eV, respectively. Therefore, it was stated that the current voltage characteristic with the temperature can be explained by thermionic emission theory with Gaussian distribution of the Φb at the interface.

Memory Device and Nanofabrication Techniques Using Electrically Configurable Materials

NASA Astrophysics Data System (ADS)

Ascenso Simões, Bruno

Development of novel nanofabrication techniques and single-walled carbon nanotubes field configurable transistor (SWCNT-FCT) memory devices using electrically configurable materials is presented. A novel lithographic technique, electric lithography (EL), that uses electric field for pattern generation has been demonstrated. It can be used for patterning of biomolecules on a polymer surface and patterning of resist as well. Using electrical resist composed of a polymer having Boc protected amine group and iodonium salt, Boc group on the surface of polymer was modified to free amine by applying an electric field. On the modified surface of the polymer, Streptavidin pattern was fabricated with a sub-micron scale. Also patterning of polymer resin composed of epoxy monomers and diaryl iodonium salt by EL has been demonstrated. Reaction mechanism for electric resist configuration is believed to be induced by an acid generation via electrochemical reduction in the resist. We show a novel field configurable transistor (FCT) based on single-walled carbon nanotube network field-effect transistors in which poly (ethylene glycol) crosslinked by electron-beam is incorporated into the gate. The device conductance can be configured to arbitrary states reversibly and repeatedly by applying external gate voltages. Raman spectroscopy revealed that evolution of the ratio of D- to G-band intensity in the SWCNTs of the FCT progressively increases as the device is configured to lower conductance states. Electron transport studies at low temperatures showed a strong temperature dependence of the resistance. Band gap widening of CNTs up to ˜ 4 eV has been observed by examining the differential conductance-gate voltage-bias voltage relationship. The switching mechanism of the FCT is attributed a structural transformation of CNTs via reversible hydrogenation and dehydrogenations induced by gate voltages, which tunes the CNT bandgap continuously and reversibly to non-volatile analog values. The CNT transistors with field tunable band gaps would facilitate field programmable circuits based on the self-organized CNTs, and might also lead to novel analog memory, neuromorphic, and photonic devices.

DC attenuation meter

DOEpatents

Hargrove, Douglas L.

2004-09-14

A portable, hand-held meter used to measure direct current (DC) attenuation in low impedance electrical signal cables and signal attenuators. A DC voltage is applied to the signal input of the cable and feedback to the control circuit through the signal cable and attenuators. The control circuit adjusts the applied voltage to the cable until the feedback voltage equals the reference voltage. The "units" of applied voltage required at the cable input is the system attenuation value of the cable and attenuators, which makes this meter unique. The meter may be used to calibrate data signal cables, attenuators, and cable-attenuator assemblies.

DC Motor control using motor-generator set with controlled generator field

DOEpatents

Belsterling, Charles A.; Stone, John

1982-01-01

A d.c. generator is connected in series opposed to the polarity of a d.c. power source supplying a d.c. drive motor. The generator is part of a motor-generator set, the motor of which is supplied from the power source connected to the motor. A generator field control means varies the field produced by at least one of the generator windings in order to change the effective voltage output. When the generator voltage is exactly equal to the d.c. voltage supply, no voltage is applied across the drive motor. As the field of the generator is reduced, the drive motor is supplied greater voltage until the full voltage of the d.c. power source is supplied when the generator has zero field applied. Additional voltage may be applied across the drive motor by reversing and increasing the reversed field on the generator. The drive motor may be reversed in direction from standstill by increasing the generator field so that a reverse voltage is applied across the d.c. motor.

Room-Temperature Determination of Two-Dimensional Electron Gas Concentration and Mobility in Heterostructures

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

1993-01-01

A technique for determination of room-temperature two-dimensional electron gas (2DEG) concentration and mobility in heterostructures is presented. Using simultaneous fits of the longitudinal and transverse voltages as a function of applied magnetic field, we were able to separate the parameters associated with the 2DEG from those of the parallel layer. Comparison with the Shubnikov-de Haas data derived from measurements at liquid helium temperatures proves that the analysis of the room-temperature data provides an excellent estimate of the 2DEG concentration. In addition we were able to obtain for the first time the room-temperature mobility of the 2DEG, an important parameter to device application. Both results are significantly different from those derived from conventional Hall analysis.

Temperature and Voltage Offsets in High- ZT Thermoelectrics

NASA Astrophysics Data System (ADS)

Levy, George S.

2018-06-01

Thermodynamic temperature can take on different meanings. Kinetic temperature is an expectation value and a function of the kinetic energy distribution. Statistical temperature is a parameter of the distribution. Kinetic temperature and statistical temperature, identical in Maxwell-Boltzmann statistics, can differ in other statistics such as those of Fermi-Dirac or Bose-Einstein when a field is present. Thermal equilibrium corresponds to zero statistical temperature gradient, not zero kinetic temperature gradient. Since heat carriers in thermoelectrics are fermions, the difference between these two temperatures may explain voltage and temperature offsets observed during meticulous Seebeck measurements in which the temperature-voltage curve does not go through the origin. In conventional semiconductors, temperature offsets produced by fermionic electrical carriers are not observable because they are shorted by heat phonons in the lattice. In high- ZT materials, however, these offsets have been detected but attributed to faulty laboratory procedures. Additional supporting evidence for spontaneous voltages and temperature gradients includes data collected in epistatic experiments and in the plasma Q-machine. Device fabrication guidelines for testing the hypothesis are suggested including using unipolar junctions stacked in a superlattice, alternating n/ n + and p/ p + junctions, selecting appropriate dimensions, doping, and loading.

Temperature and Voltage Offsets in High-ZT Thermoelectrics

NASA Astrophysics Data System (ADS)

Levy, George S.

2017-10-01

Thermodynamic temperature can take on different meanings. Kinetic temperature is an expectation value and a function of the kinetic energy distribution. Statistical temperature is a parameter of the distribution. Kinetic temperature and statistical temperature, identical in Maxwell-Boltzmann statistics, can differ in other statistics such as those of Fermi-Dirac or Bose-Einstein when a field is present. Thermal equilibrium corresponds to zero statistical temperature gradient, not zero kinetic temperature gradient. Since heat carriers in thermoelectrics are fermions, the difference between these two temperatures may explain voltage and temperature offsets observed during meticulous Seebeck measurements in which the temperature-voltage curve does not go through the origin. In conventional semiconductors, temperature offsets produced by fermionic electrical carriers are not observable because they are shorted by heat phonons in the lattice. In high-ZT materials, however, these offsets have been detected but attributed to faulty laboratory procedures. Additional supporting evidence for spontaneous voltages and temperature gradients includes data collected in epistatic experiments and in the plasma Q-machine. Device fabrication guidelines for testing the hypothesis are suggested including using unipolar junctions stacked in a superlattice, alternating n/n + and p/p + junctions, selecting appropriate dimensions, doping, and loading.

Evaluation of high temperature dielectric films for high voltage power electronic applications

NASA Technical Reports Server (NTRS)

Suthar, J. L.; Laghari, J. R.

1992-01-01

Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

Electro-optical phenomena based on ionic liquids in an optofluidic waveguide.

PubMed

He, Xiaodong; Shao, Qunfeng; Cao, Pengfei; Kong, Weijie; Sun, Jiqian; Zhang, Xiaoping; Deng, Youquan

2015-03-07

An optofluidic waveguide with a simple two-terminal electrode geometry, when filled with an ionic liquid (IL), forms a lateral electric double-layer capacitor under a direct current (DC) electric field, which allows the realization of an extremely high carrier density in the vicinity of the electrode surface and terminals to modulate optical transmission at room temperature under low voltage operation (0 to 4 V). The unique electro-optical phenomenon of ILs was investigated at three wavelengths (663, 1330 and 1530 nm) using two waveguide geometries. Strong electro-optical modulations with different efficiencies were observed at the two near-infrared (NIR) wavelengths, while no detectable modulation was observed at 663 nm. The first waveguide geometry was used to investigate the position-dependent modulation along the waveguide; the strongest modulation was observed in the vicinity of the electrode terminal. The modulation phase is associated with the applied voltage polarity, which increases in the vicinity of the negative electrode and decreases at the positive electrode. The second waveguide geometry was used to improve the modulation efficiency. Meanwhile, the electro-optical modulations of seven ILs were compared at an applied voltage ranging from ±2 V to ±3.5 V. The results reveal that the modulation amplitude and response speed increase with increasing applied voltage, as well as the electrical conductivity of ILs. Despite the fact that the response speed isn't fast due to the high ionic density of ILs, the modulation amplitude can reach up to 6.0 dB when a higher voltage (U = ±3.5 V) is applied for the IL [Emim][BF4]. Finally, the physical explanation of the phenomenon was discussed. The effect of the change in IL structure on the electro-optical phenomena was investigated in another new experiment. The results reveal that the electro-optical phenomenon is probably caused mainly by the change in carrier concentration (ion redistribution near charged electrodes), which induces the enhancement and suppression of NIR optical absorption (contributed by C-H and N-H groups) in the vicinity of the negative electrode and positive electrode, respectively.

Design and assessment of a robust voltage amplifier with 2.5 GHz GBW and >100 kGy total dose tolerance

NASA Astrophysics Data System (ADS)

Verbeeck, J.; Leroux, P.; Steyaert, M.

2011-01-01

A differential voltage amplifier with a gain-bandwidth product of 2.5Ghz and using adaptive biasing has been designed in a standard CMOS technology and assessed under radiation and temperature variations. The principle used in this ASIC will be employed in the design of a Gbps TIA with improved tolerance for γ-irradiation and temperature for an optical instrumentation (LIDAR) receiver aiming at operation in harsh environments. The voltage amplifier was tested under gamma radiation and features a gain degradation of merely 4.5% up to a total dose of 100kGy. In order to verify the radiation effects on the IC, the threshold voltage shift of the separate transistors has been investigated. Temperature characterization has shown that the amplifier features a reduction of the voltage gain by only 5.6% for a temperature range of -40 till 130 °C.

Reversible superconductor-insulator transition in LiTi2O4 induced by Li-ion electrochemical reaction

PubMed Central

Yoshimatsu, K.; Niwa, M.; Mashiko, H.; Oshima, T.; Ohtomo, A.

2015-01-01

Transition metal oxides display various electronic and magnetic phases such as high-temperature superconductivity. Controlling such exotic properties by applying an external field is one of the biggest continuous challenges in condensed matter physics. Here, we demonstrate clear superconductor-insulator transition of LiTi2O4 films induced by Li-ion electrochemical reaction. A compact electrochemical cell of pseudo-Li-ion battery structure is formed with a superconducting LiTi2O4 film as an anode. Li content in the film is controlled by applying a constant redox voltage. An insulating state is achieved by Li-ion intercalation to the superconducting film by applying reduction potential. In contrast, the superconducting state is reproduced by applying oxidation potential to the Li-ion intercalated film. Moreover, superconducting transition temperature is also recovered after a number of cycles of Li-ion electrochemical reactions. This complete reversible transition originates in difference in potentials required for deintercalation of initially contained and electrochemically intercalated Li+ ions. PMID:26541508

Reversible superconductor-insulator transition in LiTi2O4 induced by Li-ion electrochemical reaction.

PubMed

Yoshimatsu, K; Niwa, M; Mashiko, H; Oshima, T; Ohtomo, A

2015-11-06

Transition metal oxides display various electronic and magnetic phases such as high-temperature superconductivity. Controlling such exotic properties by applying an external field is one of the biggest continuous challenges in condensed matter physics. Here, we demonstrate clear superconductor-insulator transition of LiTi2O4 films induced by Li-ion electrochemical reaction. A compact electrochemical cell of pseudo-Li-ion battery structure is formed with a superconducting LiTi2O4 film as an anode. Li content in the film is controlled by applying a constant redox voltage. An insulating state is achieved by Li-ion intercalation to the superconducting film by applying reduction potential. In contrast, the superconducting state is reproduced by applying oxidation potential to the Li-ion intercalated film. Moreover, superconducting transition temperature is also recovered after a number of cycles of Li-ion electrochemical reactions. This complete reversible transition originates in difference in potentials required for deintercalation of initially contained and electrochemically intercalated Li(+) ions.

Recent developments in novel freezing and thawing technologies applied to foods.

PubMed

Wu, Xiao-Fei; Zhang, Min; Adhikari, Benu; Sun, Jincai

2017-11-22

This article reviews the recent developments in novel freezing and thawing technologies applied to foods. These novel technologies improve the quality of frozen and thawed foods and are energy efficient. The novel technologies applied to freezing include pulsed electric field pre-treatment, ultra-low temperature, ultra-rapid freezing, ultra-high pressure and ultrasound. The novel technologies applied to thawing include ultra-high pressure, ultrasound, high voltage electrostatic field (HVEF), and radio frequency. Ultra-low temperature and ultra-rapid freezing promote the formation and uniform distribution of small ice crystals throughout frozen foods. Ultra-high pressure and ultrasound assisted freezing are non-thermal methods and shorten the freezing time and improve product quality. Ultra-high pressure and HVEF thawing generate high heat transfer rates and accelerate the thawing process. Ultrasound and radio frequency thawing can facilitate thawing process by volumetrically generating heat within frozen foods. It is anticipated that these novel technologies will be increasingly used in food industries in the future.

Wide-temperature integrated operational amplifier

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad (Inventor); Levanas, Greg (Inventor); Chen, Yuan (Inventor); Cozy, Raymond S. (Inventor); Greenwell, Robert (Inventor); Terry, Stephen (Inventor); Blalock, Benjamin J. (Inventor)

2009-01-01

The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

A new curvature compensation technique for CMOS voltage reference using |VGS| and ΔVBE

NASA Astrophysics Data System (ADS)

Xuemin, Li; Mao, Ye; Gongyuan, Zhao; Yun, Zhang; Yiqiang, Zhao

2016-05-01

A new mixed curvature compensation technique for CMOS voltage reference is presented, which resorts to two sub-references with complementary temperature characteristics. The first sub-reference is the source-gate voltage |VGS|p of a PMOS transistor working in the saturated region. The second sub-reference is the weighted sum of gate-source voltages |VGS|n of NMOS transistors in the subthreshold region and the difference between two base-emitter voltages ΔVBE of bipolar junction transistors (BJTs). The voltage reference implemented utilizing the proposed curvature compensation technique exhibits a low temperature coefficient and occupies a small silicon area. The proposed technique was verified in 0.18 μm standard CMOS process technology. The performance of the circuit has been measured. The measured results show a temperature coefficient as low as 12.7 ppm/°C without trimming, over a temperature range from -40 to 120 °C, and the current consumption is 50 μA at room temperature. The measured power-supply rejection ratio (PSRR) is -31.2 dB @ 100 kHz. The circuit occupies an area of 0.045 mm2. Project supported by the National Natural Science Foundation of China (No. 61376032).

The Role of Additional Pulses in Electropermeabilization Protocols

PubMed Central

Suárez, Cecilia; Soba, Alejandro; Maglietti, Felipe; Olaiz, Nahuel; Marshall, Guillermo

2014-01-01

Electropermeabilization (EP) based protocols such as those applied in medicine, food processing or environmental management, are well established and widely used. The applied voltage, as well as tissue electric conductivity, are of utmost importance for assessing final electropermeabilized area and thus EP effectiveness. Experimental results from literature report that, under certain EP protocols, consecutive pulses increase tissue electric conductivity and even the permeabilization amount. Here we introduce a theoretical model that takes into account this effect in the application of an EP-based protocol, and its validation with experimental measurements. The theoretical model describes the electric field distribution by a nonlinear Laplace equation with a variable conductivity coefficient depending on the electric field, the temperature and the quantity of pulses, and the Penne's Bioheat equation for temperature variations. In the experiments, a vegetable tissue model (potato slice) is used for measuring electric currents and tissue electropermeabilized area in different EP protocols. Experimental measurements show that, during sequential pulses and keeping constant the applied voltage, the electric current density and the blackened (electropermeabilized) area increase. This behavior can only be attributed to a rise in the electric conductivity due to a higher number of pulses. Accordingly, we present a theoretical modeling of an EP protocol that predicts correctly the increment in the electric current density observed experimentally during the addition of pulses. The model also demonstrates that the electric current increase is due to a rise in the electric conductivity, in turn induced by temperature and pulse number, with no significant changes in the electric field distribution. The EP model introduced, based on a novel formulation of the electric conductivity, leads to a more realistic description of the EP phenomenon, hopefully providing more accurate predictions of treatment outcomes. PMID:25437512

Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

NASA Astrophysics Data System (ADS)

Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

2015-08-01

A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz-100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10-273 ps for DC voltages and 189-813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250-2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115-1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, N.; Department of Electrical and Computer Engineering, MSC01 1100, University of New Mexico, Albuquerque, New Mexico 87131-0001; Branch, D. W.

2015-08-15

A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO{sub 3}) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5more » μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

Comparative study of 0° X-cut and Y+36°-cut lithium niobate high-voltage sensing

DOE PAGES

Patel, N.; Branch, D. W.; Schamiloglu, E.; ...

2015-08-11

A comparison study between Y+36° and 0° X-cut lithium niobate (LiNbO 3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y+36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses tomore » both crystals, the voltage-induced shift scaled linearly with voltage. For the Y+36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y+36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y+36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. Furthermore, when the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

Towards an understanding of induced-charge electrokinetics at large applied voltages in concentrated solutions.

PubMed

Bazant, Martin Z; Kilic, Mustafa Sabri; Storey, Brian D; Ajdari, Armand

2009-11-30

The venerable theory of electrokinetic phenomena rests on the hypothesis of a dilute solution of point-like ions in quasi-equilibrium with a weakly charged surface, whose potential relative to the bulk is of order the thermal voltage (kT/e approximately 25 mV at room temperature). In nonlinear electrokinetic phenomena, such as AC or induced-charge electro-osmosis (ACEO, ICEO) and induced-charge electrophoresis (ICEP), several V approximately 100 kT/e are applied to polarizable surfaces in microscopic geometries, and the resulting electric fields and induced surface charges are large enough to violate the assumptions of the classical theory. In this article, we review the experimental and theoretical literatures, highlight discrepancies between theory and experiment, introduce possible modifications of the theory, and analyze their consequences. We argue that, in response to a large applied voltage, the "compact layer" and "shear plane" effectively advance into the liquid, due to the crowding of counterions. Using simple continuum models, we predict two general trends at large voltages: (i) ionic crowding against a blocking surface expands the diffuse double layer and thus decreases its differential capacitance, and (ii) a charge-induced viscosity increase near the surface reduces the electro-osmotic mobility; each trend is enhanced by dielectric saturation. The first effect is able to predict high-frequency flow reversal in ACEO pumps, while the second may explain the decay of ICEO flow with increasing salt concentration. Through several colloidal examples, such as ICEP of an uncharged metal sphere in an asymmetric electrolyte, we show that nonlinear electrokinetic phenomena are generally ion-specific. Similar theoretical issues arise in nanofluidics (due to confinement) and ionic liquids (due to the lack of solvent), so the paper concludes with a general framework of modified electrokinetic equations for finite-sized ions.

Differential comparator cirucit

DOEpatents

Hickling, Ronald M.

1996-01-01

A differential comparator circuit for an Analog-to-Digital Converter (ADC) or other application includes a plurality of differential comparators and a plurality of offset voltage generators. Each comparator includes first and second differentially connected transistor pairs having equal and opposite voltage offsets. First and second offset control transistors are connected in series with the transistor pairs respectively. The offset voltage generators generate offset voltages corresponding to reference voltages which are compared with a differential input voltage by the comparators. Each offset voltage is applied to the offset control transistors of at least one comparator to set the overall voltage offset of the comparator to a value corresponding to the respective reference voltage. The number of offset voltage generators required in an ADC application can be reduced by a factor of approximately two by applying the offset voltage from each offset voltage generator to two comparators with opposite logical sense such that positive and negative offset voltages are produced by each offset voltage generator.

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.

2004-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Design and Testing of 100 mK High-voltage Electrodes for AEgIS

NASA Astrophysics Data System (ADS)

Derking, J. H.; Liberadzka, J.; Koettig, T.; Bremer, J.

The AEgIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) experiment at CERN has as main goal to perform the first direct measurement of the Earth's gravitational acceleration on antihydrogen atoms within 1% precision. To reach this precision, the antihydrogen should be cooled down to about 100 mK to reduce its random vertical velocity. This is obtained by mounting a Penning trap consisting of multiple high-voltage electrodes on the mixing chamber of a dilution refrigerator with cooling capacity of 100 μW at 50 mK. A design of the high-voltage electrodes is made and experimentally tested at operating conditions. The high-voltage electrodes are made of sapphire with four gold sputtered electrode sectors on it. The electrodes have a width of 40 mm, a height of 18 mm and a thickness of 5.8 mm and for performance testing are mountedto the mixing chamber of a dilution refrigerator with a 250 μm thick indium foil sandwiched inbetween the two to increase the thermal contact. A static heat load of 120 nW applied to the top surface of the electrode results in a maximum measured temperature of 100 mK while the mixing chamber is kept at a constant temperature of 50 mK. The measured totalthermal resistivity lies in the range of 210-260 cm2 K4 W-1, which is much higher than expected from literature. Further research needs to be done to investigate this.

Performance and Reliability of Electrowetting-on-Dielectric (EWOD) Systems Based on Tantalum Oxide.

PubMed

Mibus, Marcel; Zangari, Giovanni

2017-12-06

The electrowetting-on-dielectric behavior of Cytop/Tantalum oxide (TaOx) bilayers is studied by measuring their response vs applied voltage and under prolonged periodic cycling, below and above the threshold voltage V T corresponding to the breakdown field for the oxide. TaOx exhibits symmetric solid state I-V characteristics, with electronic conduction dominated by Schottky, Poole-Frenkel emission; conduction is attributed to oxygen vacancies (6 × 10 16 cm -3 ), resulting in large currents at low bias. Electrolyte/Metal Oxide/Metal I-V characteristics show oxide degradation at (<5 V) cathodic bias; anodic bias in contrast results in stable characteristics until reaching the anodization voltage, where the oxide thickens, leading eventually to breakdown and oxygen production at the electrode. Electrowetting angle vs applied voltage undergoes three different stages: a parabolic variation of contact angle (CA) with applied voltage, CA saturation, and rebound of the CA to higher values due to degradation of the polymer layer. The contact angle remained stable for several hundred cycles if the applied voltage was less than V T ; degradation in contrast is fast when the voltage is above V T . Degradation of the electrowetting response with time is linked to charge accumulation in the polymer, which inhibits the rebound of the CA when voltage is being applied.

Fully depleted back illuminated CCD

DOEpatents

Holland, Stephen Edward

2001-01-01

A backside illuminated charge coupled device (CCD) is formed of a relatively thick high resistivity photon sensitive silicon substrate, with frontside electronic circuitry, and an optically transparent backside ohmic contact for applying a backside voltage which is at least sufficient to substantially fully deplete the substrate. A greater bias voltage which overdepletes the substrate may also be applied. One way of applying the bias voltage to the substrate is by physically connecting the voltage source to the ohmic contact. An alternate way of applying the bias voltage to the substrate is to physically connect the voltage source to the frontside of the substrate, at a point outside the depletion region. Thus both frontside and backside contacts can be used for backside biasing to fully deplete the substrate. Also, high resistivity gaps around the CCD channels and electrically floating channel stop regions can be provided in the CCD array around the CCD channels. The CCD array forms an imaging sensor useful in astronomy.

Local doping of two-dimensional materials

DOEpatents

Wong, Dillon; Velasco, Jr, Jairo; Ju, Long; Kahn, Salman; Lee, Juwon; Germany, Chad E.; Zettl, Alexander K.; Wang, Feng; Crommie, Michael F.

2016-09-20

This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.

Transport performance of a HTS current lead prepared by the TFA-MOD processed YBCO tapes

NASA Astrophysics Data System (ADS)

Shiohara, K.; Sakai, S.; Ohki, S.; Yamada, Y.; Tachikawa, K.; Koizumi, T.; Aoki, Y.; Hikichi, Y.; Nishioka, J.; Hasegawa, T.

2009-10-01

A superconducting current lead has been prepared using 12 tapes of the trifluoroacetates - metal organic deposition (TFA-MOD) processed Y 1Ba 2Cu 3O 7-δ (YBCO) coated conductors with critical current ( I c) of about 100 A at 77 K in self-field. The tapes are 4.5 mm in width, 220 mm in length and about 120 μm in overall thickness. The 1 μm thick superconducting YBCO layer was formed through the TFA-MOD process on Hastelloy TM substrate tapes with two buffer oxide layers of Gd 2Zr 2O 7 (GZO) and CeO 2. The 12 YBCO tapes were arrayed on the both sides (six tapes on each side) of a stainless steel board with 3 mm in thickness for a board type shape. They were similarly soldered to copper caps at the both ends. The transport current of 1000 A was stably applied for 10 min in the liquid nitrogen temperature without any voltage generation in all tapes. Although some voltage in some YBCO tapes generated at the applied currents of about 1100 A, the transport current of 1200 A was successfully applied without quenching. The voltage between both copper caps linearly increased with increasing the transport current, and it was about 300 μV at an applied current of 1000 A. A low joint resistance between the YBCO tapes and the copper caps resulted in small amounts of the Joule heating at the joints when 1000 A was applied. The overall (effective) thermal conductivity of the current leads composed of YBCO tapes and the stainless steel board was much lower than that of Non-superconducting current leads. Therefore, the present current leads with small heat leakage seemed to be practically promising for superconducting magnets.

Amperometric Solid Electrolyte Oxygen Microsensors with Easy Batch Fabrication

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Xu, Jennifer C.; Liu, ChungChiun

2011-01-01

An amperometric solid electrolyte oxygen (O2) microsensor using a novel and robust structure has been developed with a detection range of 0.025 to 21 percent of O2 concentration. The microsensor has a simple structure with a sensing area of 1.10 0.99 mm(exp 2), and is operated by applying voltage across the electrodes and measuring the resulting current flow at a temperature of 600 C.

Development of in-situ high-voltage and high-temperature stressing capability on atomic force microscopy platform

DOE PAGES

Xiao, Chuanxiao; Jiang, Chun-Sheng; Johnston, Steve; ...

2017-10-18

Reliability has become an increasingly important issue as photovoltaic technologies mature. However, researching reliability at the nanometer scale is in its infancy; in particular, in-situ studies have not been reported to date. Here, to investigate potential-induced degradation (PID) of solar cell modules, we have developed an in-situ stressing capability with applied high voltage (HV) and high temperature (HT) on an atomic force microscopy (AFM) platform. We designed a sample holder to simultaneously accommodate 1000-V HV and 200 degrees C HT stressing. Three technical challenges have been overcome along with the development: thermal drift at HT, HV interference with measurement, andmore » arc discharge caused by HV. We demonstrated no observable measurement artifact under the stress conditions. Based on our in-situ stressing AFM, Kelvin probe force microscopy potential imaging revealed the evolution of electrical potential across the junction along with the PID stressing time, which provides vital information to further study the PID mechanism.« less

Development of in-situ high-voltage and high-temperature stressing capability on atomic force microscopy platform

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao; Jiang, Chun-Sheng; Johnston, Steve

Reliability has become an increasingly important issue as photovoltaic technologies mature. However, researching reliability at the nanometer scale is in its infancy; in particular, in-situ studies have not been reported to date. Here, to investigate potential-induced degradation (PID) of solar cell modules, we have developed an in-situ stressing capability with applied high voltage (HV) and high temperature (HT) on an atomic force microscopy (AFM) platform. We designed a sample holder to simultaneously accommodate 1000-V HV and 200 degrees C HT stressing. Three technical challenges have been overcome along with the development: thermal drift at HT, HV interference with measurement, andmore » arc discharge caused by HV. We demonstrated no observable measurement artifact under the stress conditions. Based on our in-situ stressing AFM, Kelvin probe force microscopy potential imaging revealed the evolution of electrical potential across the junction along with the PID stressing time, which provides vital information to further study the PID mechanism.« less

Temperature gradient measurements by using thermoelectric effect in CNTs-silicone adhesive composite.

PubMed

Chani, Muhammad Tariq Saeed; Karimov, Kh S; Asiri, Abdullah M; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results.

Temperature Gradient Measurements by Using Thermoelectric Effect in CNTs-Silicone Adhesive Composite

PubMed Central

Chani, Muhammad Tariq Saeed; Karimov, Kh. S.; Asiri, Abdullah M.; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results. PMID:24748375

Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

PubMed

Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

2015-11-01

Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.

Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

NASA Astrophysics Data System (ADS)

Teyssedre, G.; Vu, T. T. N.; Laurent, C.

2015-12-01

Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30-60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10-14-10-13 m2 V-1 s-1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

An 1.4 ppm/°C bandgap voltage reference with automatic curvature-compensation technique

NASA Astrophysics Data System (ADS)

Zhou, Zekun; Yu, Hongming; Shi, Yue; Zhang, Bo

2017-12-01

A high-precision Bandgap voltage reference (BGR) with a novel curvature-compensation scheme is proposed in this paper. The temperature coefficient (TC) can be automatically optimized with a built-in adaptive curvature-compensation technique, which is realized in a digitization control way. Firstly, an exponential curvature compensation method is adopted to reduce the TC in a certain degree, especially in low temperature range. Then, the temperature drift of BGR in higher temperature range can be further minimized by dynamic zero-temperature-coefficient point tracking with temperature changes. With the help of proposed adaptive signal processing, the output voltage of BGR can approximately maintain zero TC in a wider temperature range. Experiment results of the BGR proposed in this paper, which is implemented in 0.35-μm BCD process, illustrate that the TC of 1.4ppm/°C is realized under the power supply voltage of 3.6V and the power supply rejection of the proposed circuit is -67dB.

MULTIPLIER CIRCUIT

DOEpatents

Thomas, R.E.

1959-01-20

An electronic circuit is presented for automatically computing the product of two selected variables by multiplying the voltage pulses proportional to the variables. The multiplier circuit has a plurality of parallel resistors of predetermined values connected through separate gate circults between a first input and the output terminal. One voltage pulse is applied to thc flrst input while the second voltage pulse is applied to control circuitry for the respective gate circuits. Thc magnitude of the second voltage pulse selects the resistors upon which the first voltage pulse is imprcssed, whereby the resultant output voltage is proportional to the product of the input voltage pulses

Multilevel DC link inverter

DOEpatents

Su, Gui-Jia

2003-06-10

A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

Full system engineering design and operation of an oxygen plant

NASA Technical Reports Server (NTRS)

Colvin, James; Schallhorn, Paul; Ramonhalli, Kumar

1992-01-01

The production of oxygen from the indigenous resources on Mars is described. After discussing briefly the project's background and the experimental system design, specific experimental results of the electrolytic cell are presented. At the heart of the oxygen production system is a tubular solid zirconia electrolyte cell that will electrochemically separate oxygen from a high-temperature stream of Coleman grade carbon dioxide. Experimental results are discussed and certain system efficiencies are defined. The parameters varied include (1) the cell operating temperature; (2) the carbon dioxide flow rate; and (3) the voltage applied across the cell. The results confirm our theoretical expectations.

INDIRECT INTELLIGENT SLIDING MODE CONTROL OF A SHAPE MEMORY ALLOY ACTUATED FLEXIBLE BEAM USING HYSTERETIC RECURRENT NEURAL NETWORKS.

PubMed

Hannen, Jennifer C; Crews, John H; Buckner, Gregory D

2012-08-01

This paper introduces an indirect intelligent sliding mode controller (IISMC) for shape memory alloy (SMA) actuators, specifically a flexible beam deflected by a single offset SMA tendon. The controller manipulates applied voltage, which alters SMA tendon temperature to track reference bending angles. A hysteretic recurrent neural network (HRNN) captures the nonlinear, hysteretic relationship between SMA temperature and bending angle. The variable structure control strategy provides robustness to model uncertainties and parameter variations, while effectively compensating for system nonlinearities, achieving superior tracking compared to an optimized PI controller.

Modularized multilevel and z-source power converter as renewable energy interface for vehicle and grid-connected applications

NASA Astrophysics Data System (ADS)

Cao, Dong

Due the energy crisis and increased oil price, renewable energy sources such as photovoltaic panel, wind turbine, or thermoelectric generation module, are used more and more widely for vehicle and grid-connected applications. However, the output of these renewable energy sources varies according to different solar radiation, wind speed, or temperature difference, a power converter interface is required for the vehicle or grid-connected applications. Thermoelectric generation (TEG) module as a renewable energy source for automotive industry is becoming very popular recently. Because of the inherent characteristics of TEG modules, a low input voltage, high input current and high voltage gain dc-dc converters are needed for the automotive load. Traditional high voltage gain dc-dc converters are not suitable for automotive application in terms of size and high temperature operation. Switched-capacitor dc-dc converters have to be used for this application. However, high voltage spike and EMI problems exist in traditional switched-capacitor dc-dc converters. Huge capacitor banks have to be utilized to reduce the voltage ripple and achieve high efficiency. A series of zero current switching (ZCS) or zero voltage switching switched-capacitor dc-dc converters have been proposed to overcome the aforementioned problems of the traditional switched-capacitor dc-dc converters. By using the proposed soft-switching strategy, high voltage spike is reduced, high EMI noise is restricted, and the huge capacitor bank is eliminated. High efficiency, high power density and high temperature switched-capacitor dc-dc converters could be made for the TEG interface in vehicle applications. Several prototypes have been made to validate the proposed circuit and confirm the circuit operation. In order to apply PV panel for grid-connected application, a low cost dc-ac inverter interface is required. From the use of transformer and safety concern, two different solutions can be implemented, non-isolated or isolated PV inverter. For the non-isolated transformer-less solution, a semi-Z-source inverter for single phase photovoltaic systems has been proposed. The proposed semi-Z-source inverter utilizes only two switching devices with doubly grounded feature. The total cost have been reduced, the safety and EMI issues caused by the high frequency ground current are solved. For the transformer isolated solution, a boost half-bridge dc-ac micro-inverter has been proposed. The proposed boost half-bridge dc-dc converter utilizes only two switching devices with zero voltage switching features which is able to reduce the total system cost and power loss.

Synthesis of polymer nanostructures with conductance switching properties

DOEpatents

Su, Kai; Nuraje, Nurxat; Zhang, Lingzhi; Matsui, Hiroshi; Yang, Nan Loh

2015-03-03

The present invention is directed to crystalline organic polymer nanoparticles comprising a conductive organic polymer; wherein the crystalline organic polymer nanoparticles have a size of from 10 nm to 200 nm and exhibits two current-voltage states: (1) a high resistance current-voltage state, and (2) a low resistance current-voltage state, wherein when a first positive threshold voltage (V.sub.th1) or higher positive voltage, or a second negative threshold voltage (V.sub.th2) or higher negative voltage is applied to the nanoparticle, the nanoparticle exhibits the low-resistance current-voltage state, and when a voltage less positive than the first positive threshold voltage or a voltage less negative than the second negative threshold voltage is applied to the nanoparticle, the nanoparticle exhibits the high-resistance current-voltage state. The present invention is also directed methods of manufacturing the nanoparticles using novel interfacial oxidative polymerization techniques.

High-temperature, gas-filled ceramic rectifiers, thyratrons, and voltage-reference tubes

NASA Technical Reports Server (NTRS)

Baum, E. A.

1969-01-01

Thyratron, capable of being operated as a rectifier and a voltage-reference tube, was constructed and tested for 1000 hours at temperatures to 800 degrees C. With current levels at 15 amps and peak voltages of 2000 volts and frequencies at 6000 cps, tube efficiency was greater than 97 percent.

Precision Voltage Referencing Techniques in MOS Technology.

NASA Astrophysics Data System (ADS)

Song, Bang-Sup

With the increasing complexity of functions on a single MOS chip, precision analog cicuits implemented in the same technology are in great demand so as to be integrated together with digital circuits. The future development of MOS data acquisition systems will require precision on-chip MOS voltage references. This dissertation will probe two most promising configurations of on-chip voltage references both in NMOS and CMOS technologies. In NMOS, an ion-implantation effect on the temperature behavior of MOS devices is investigated to identify the fundamental limiting factors of a threshold voltage difference as an NMOS voltage source. For this kind of voltage reference, the temperature stability on the order of 20ppm/(DEGREES)C is achievable with a shallow single-threshold implant and a low-current, high-body bias operation. In CMOS, a monolithic prototype bandgap reference is designed, fabricated and tested which embodies a curvature compensation and exhibits a minimized sensitivity to the process parameter variation. Experimental results imply that an average temperature stability on the order of 10ppm/(DEGREES)C with a production spread of less than 10ppm/(DEGREES)C feasible over the commercial temperature range.

Resistive switching and memory effects of AgI thin film

NASA Astrophysics Data System (ADS)

Liang, X. F.; Chen, Y.; Shi, L.; Lin, J.; Yin, J.; Liu, Z. G.

2007-08-01

A memory device has been fabricated using an AgI film sandwiched between a Pt film and an Ag film with the lateral size of the device scaled down to 300 nm. The AgI film was made by the iodination of the Ag film at room temperature and under ambient pressure. The switching between high- and low-resistance states can be realized by applying voltages of different polarities. The switching can be performed under the application of voltage pulses with a 100 Hz frequency for ~103 times. The switching times are in the order of microseconds and the retention time is about a week. The switching effects are explained as the electrochemical growth and dissolution of Ag in AgI.

Electric-field-driven phase transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Wu, B.; Zimmers, A.; Aubin, H.; Gosh, R.; Liu, Y.; Lopez, R.

2011-03-01

In recent years, various strongly correlated materials have shown sharp switching from insulator to metallic state in their I(V) transport curves. Determining if this is purely an out of equilibrium phenomena (due to the strong electric field applied throughout the sample) or simply a Joule heating issue is still an open question. To address this issue, we have first measured local I(V) curves in vanadium dioxide (VO2) Mott insulator at various temperatures using a conducting AFM setup and determined the voltage threshold of the insulator to metal switching. By lifting the tip above the surface (> 35 nm) , wehavethenmeasuredthepurelyelectrostaticforcebetweenthetipandsamplesurfaceasthevoltagebetweenthesetwowasincreased . Inaverynarrowtemperaturerange (below 360 K) , atipheightrange (below 60 nm) andavoltageappliedrange (above 8 V) , weobservedswitchingintheelectrostaticforce (telegraphicnoisevs . timeandvs . voltage) . ThispurelyelectricfieldeffectshowsthattheswitchingphenomenonisstillpresentevenwithoutJouleheatinginVO 2 .

Apparatus for in situ heating and vitrification

DOEpatents

Buelt, James L.; Oma, Kenton H.; Eschbach, Eugene A.

1994-01-01

An apparatus for decontaminating ground areas where toxic chemicals are buried includes a plurality of spaced electrodes located in the ground and to which a voltage is applied for bringing about current flow. Power delivered to the ground volatilizes the chemicals that are then collected and directed to a gas treatment system. A preferred form of the invention employs high voltage arc discharge between the electrodes for heating a ground region to relatively high temperatures at relatively low power levels. Electrodes according to the present invention are provided with preferentially active lower portions between which current flows for the purpose of soil heating or for soil melting and vitrification. Promoting current flow below ground level avoids predominantly superficial treatment and increases electrode life.

Apparatus for in situ heating and vitrification

DOEpatents

Buelt, J.L.; Oma, K.H.; Eschbach, E.A.

1994-05-31

An apparatus for decontaminating ground areas where toxic chemicals are buried includes a plurality of spaced electrodes located in the ground and to which a voltage is applied for bringing about current flow. Power delivered to the ground volatilizes the chemicals that are then collected and directed to a gas treatment system. A preferred form of the invention employs high voltage arc discharge between the electrodes for heating a ground region to relatively high temperatures at relatively low power levels. Electrodes according to the present invention are provided with preferentially active lower portions between which current flows for the purpose of soil heating or for soil melting and vitrification. Promoting current flow below ground level avoids predominantly superficial treatment and increases electrode life. 15 figs.

Frequency, thermal and voltage supercapacitor characterization and modeling

NASA Astrophysics Data System (ADS)

Rafik, F.; Gualous, H.; Gallay, R.; Crausaz, A.; Berthon, A.

A simple electrical model has been established to describe supercapacitor behaviour as a function of frequency, voltage and temperature for hybrid vehicle applications. The electrical model consists of 14 RLC elements, which have been determined from experimental data using electrochemical impedance spectroscopy (EIS) applied on a commercial supercapacitor. The frequency analysis has been extended for the first time to the millihertz range to take into account the leakage current and the charge redistribution on the electrode. Simulation and experimental results of supercapacitor charge and discharge have been compared and analysed. A good correlation between the model and the EIS results has been demonstrated from 1 mHz to 1 kHz, from -20 to 60 °C and from 0 to 2.5 V.

Study on VCSEL laser heating chip in nuclear magnetic resonance gyroscope

NASA Astrophysics Data System (ADS)

Liang, Xiaoyang; Zhou, Binquan; Wu, Wenfeng; Jia, Yuchen; Wang, Jing

2017-10-01

In recent years, atomic gyroscope has become an important direction of inertial navigation. Nuclear magnetic resonance gyroscope has a stronger advantage in the miniaturization of the size. In atomic gyroscope, the lasers are indispensable devices which has an important effect on the improvement of the gyroscope performance. The frequency stability of the VCSEL lasers requires high precision control of temperature. However, the heating current of the laser will definitely bring in the magnetic field, and the sensitive device, alkali vapor cell, is very sensitive to the magnetic field, so that the metal pattern of the heating chip should be designed ingeniously to eliminate the magnetic field introduced by the heating current. In this paper, a heating chip was fabricated by MEMS process, i.e. depositing platinum on semiconductor substrates. Platinum has long been considered as a good resistance material used for measuring temperature The VCSEL laser chip is fixed in the center of the heating chip. The thermometer resistor measures the temperature of the heating chip, which can be considered as the same temperature of the VCSEL laser chip, by turning the temperature signal into voltage signal. The FPGA chip is used as a micro controller, and combined with PID control algorithm constitute a closed loop control circuit. The voltage applied to the heating resistor wire is modified to achieve the temperature control of the VCSEL laser. In this way, the laser frequency can be controlled stably and easily. Ultimately, the temperature stability can be achieved better than 100mK.

Modelling of illuminated current-voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

NASA Astrophysics Data System (ADS)

Gopal, Vishnu; Qiu, WeiCheng; Hu, Weida

2014-11-01

The current-voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation-recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, Iexcess = Ir0 + K1 exp (K2 V), where Ir0, K1, and K2 are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.

Improvement of electricity generating performance and life expectancy of MCFC stack by applying Li/Na carbonate electrolyte. Test results and analysis of 0.44 m 2/10 kW- and 1.03 m 2/10 kW-class stack

NASA Astrophysics Data System (ADS)

Yoshiba, Fumihiko; Morita, Hiroshi; Yoshikawa, Masahiro; Mugikura, Yoshihiro; Izaki, Yoshiyuki; Watanabe, Takao; Komoda, Mineo; Masuda, Yuji; Zaima, Nobuyuki

Following the development of a 10 kW-class MCFC stack with a reactive area of 0.44 and 1.03 m 2, which applies a Li/Na carbonate electrolyte and a press stamping separator, many tests have now been carried out. In the installation tests, the observed cell voltages of the 0.44 m 2/10 kW-class stack agreed with the voltage predicted from the test results of the 100 cm 2 bench scale cell. This agreement proves that the installing procedure of the bench scale cell can be applied to the 0.44 m 2/10 kW-class stacks. The temperature distribution analysis model applied to the 100 kW-class stack was modified to calculate the temperature distribution of the 0.44 m 2/10 kW-class stack. Taking the heat loss and the heat transfer effect of the stack holder into account, the calculated temperature was close to the measured temperature; this result proves that the modification was adequate for the temperature analysis model. In the high current density operating tests on the 0.44 m 2/10 kW-class stack, an electrical power density of 2.46 kW/m 2 was recorded at an operating current density of 3000 A/m 2. In the endurance test on the 0.44 m 2/10 kW-class stack, however, unexpected Ni shortening occurred during the operating period 2500-4500 h, which had been caused by a defective formation of the electrolyte matrix. The shortening seems to have been caused by the crack, which appeared in the electrolyte matrix. The voltage degradation rate of the 0.44 m 2/10 kW-class stack was 0.52% over 1000 h, which proves that the matrix was inadequate for a long life expectancy of the MCFC stack. A final endurance test was carried out on the 1.03 m 2/10 kW-class stack, of which the matrix had been revised. The fuel utilisation and the leakage of anode gas never changed during the 10,000 h operating test. This result suggests that no shortening occurred during the 10,000 h endurance test. The cell voltage degradation rate was around 0.2-0.3% over 1000 h in the 1.03 m 2/10 kW-class stack. According to a comparison of the stack electricity generating performance of the 0.44 m 2 and the 1.03 m 2/10 kW-class stack under the same operating conditions, the performance of the 1.03 m 2 stack was lower at the beginning of the endurance test, however, its performance exceeded the performance of the 0.44 m 2/10 kW-class stack during the 10,000 h operating test. By carrying out the high current density operating test and the 10,000-hour endurance test using commercial sized 10 kW-class stacks, the stability of the MCFC stack with a Li/Na carbonate electrolyte and a press stamping separator has been proven.

Ion properties in a Hall current thruster operating at high voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garrigues, L., E-mail: laurent.garrigues@laplace.univ-tlse.fr

2016-04-28

Operation of a 5 kW-class Hall current Thruster for various voltages from 400 V to 800 V and a xenon mass flow rate of 6 mg s{sup −1} have been studied with a quasi-neutral hybrid model. In this model, anomalous electron transport is fitted from ion mean velocity measurements, and energy losses due to electron–wall interactions are used as a tuned parameter to match expected electron temperature strength for same class of thruster. Doubly charged ions production has been taken into account and detailed collisions between heavy species included. As the electron temperature increases, the main channel of Xe{sup 2+} ion production becomes stepwisemore » ionization of Xe{sup +} ions. For an applied voltage of 800 V, the mass utilization efficiency is in the range of 0.8–1.1, and the current fraction of doubly charged ions varies between 0.1 and 0.2. Results show that the region of ion production of each species is located at the same place inside the thruster channel. Because collision processes mean free path is larger than the acceleration region, each type of ions experiences same potential drop, and ion energy distributions of singly and doubly charged are very similar.« less

Optical fiber voltage sensor based on Michelsion interferometer using Fabry-Perot demodulation interferometer

NASA Astrophysics Data System (ADS)

Chen, Xinwei; He, Shengnan; Li, Dandan; Wang, Kai; Fan, Yan'en; Wu, Shuai

2014-11-01

We present an optical fiber voltage sensor by Michelsion interferometer (MI) employing a Fabry-Perot (F-P) interferometer and the DC phase tracking (DCPT) signal processing method. By mounting a MI fabricated by an optical fiber coupler on a piezoelectric (PZT) transducer bar, a dynamic strain would be generated to change the optical path difference (OPD) of the interferometer when the measured voltage was applied on the PZT. Applying an F-P interferometer to demodulate the optical intensity variation output of the MI, the voltage can be obtained. The experiment results show that the relationship between the optical intensity variation and the voltage applied on the PZT is approximately linear. Furthermore, the phase generate carrier (PGC) algorithm was applied to demodulate the output of the sensor also.

Electron density in surface barrier discharge emerging at argon/water interface: quantification for streamers and leaders

NASA Astrophysics Data System (ADS)

Cvetanović, Nikola; Galmiz, Oleksandr; Synek, Petr; Zemánek, Miroslav; Brablec, Antonín; Hoder, Tomáš

2018-02-01

Optical emission spectroscopy, fast intensified CCD imaging and electrical measurements were applied to investigate the basic plasma parameters of surface barrier discharge emerging from a conductive water electrode. The discharge was generated at the triple-line interface of atmospheric pressure argon gas and conductive water solution at the fused silica dielectrics using a sinusoidal high-voltage waveform. The spectroscopic methods of atomic line broadening and molecular spectroscopy were used to determine the electron densities and the gas temperature in the active plasma. These parameters were obtained for both applied voltage polarities and resolved spatially. Two different spectral signatures were identified in the spatially resolved spectra resulting in electron densities differing by two orders of magnitude. It is shown that two discharge mechanisms take a place: the streamer and the leader one, with electron densities of 1014 and 1016 cm-3, respectively. This spectroscopic evidence is supported by the combined diagnostics of electrical current measurements and phase-resolved intensified CCD camera imaging.

Comparison of free radicals formation induced by cold atmospheric plasma, ultrasound, and ionizing radiation.

PubMed

Rehman, Mati Ur; Jawaid, Paras; Uchiyama, Hidefumi; Kondo, Takashi

2016-09-01

Plasma medicine is increasingly recognized interdisciplinary field combining engineering, physics, biochemistry and life sciences. Plasma is classified into two categories based on the temperature applied, namely "thermal" and "non-thermal" (i.e., cold atmospheric plasma). Non-thermal or cold atmospheric plasma (CAP) is produced by applying high voltage electric field at low pressures and power. The chemical effects of cold atmospheric plasma in aqueous solution are attributed to high voltage discharge and gas flow, which is transported rapidly on the liquid surface. The argon-cold atmospheric plasma (Ar-CAP) induces efficient reactive oxygen species (ROS) in aqueous solutions without thermal decomposition. Their formation has been confirmed by electron paramagnetic resonance (EPR) spin trapping, which is reviewed here. The similarities and differences between the plasma chemistry, sonochemistry, and radiation chemistry are explained. Further, the evidence for free radical formation in the liquid phase and their role in the biological effects induced by cold atmospheric plasma, ultrasound and ionizing radiation are discussed. Copyright © 2016 Elsevier Inc. All rights reserved.

Liquid metal actuator driven by electrochemical manipulation of surface tension

NASA Astrophysics Data System (ADS)

Russell, Loren; Wissman, James; Majidi, Carmel

2017-12-01

We examine the electrocapillary properties of a fluidic actuator composed of a liquid metal droplet that is submerged in electrolytic solution and attached to an elastic beam. The beam deflection is controlled by electrochemically driven changes in the surface energy of the droplet. The metal is a eutectic gallium-indium alloy that is liquid at room temperature and forms an nm-thin Ga2O3 skin when oxidized. The effective surface tension of the droplet changes dramatically with oxidation and reduction, which are reversibly controlled by applying low voltage to the electrolytic bath. Wetting the droplet to two copper pads allows for a controllable tensile force to be developed between the opposing surfaces. We demonstrate the ability to reliably control force by changing the applied oxidizing voltage. Actuator forces and droplet geometries are also examined by performing a computational fluid mechanics simulation using Surface Evolver. The theoretical predictions are in qualitative agreement with the experimental measurements and provide additional confirmation that actuation is driven by surface tension.

High Current Hollow Cathode Plasma Plume Measurements

NASA Technical Reports Server (NTRS)

Thomas, Robert E.; Kamhawi, Hani; Williams, George J., Jr.

2013-01-01

Plasma plume measurements are reported for a hollow cathode assembly (HCA) oper-ated at discharge currents of 50, 70, and 100 A at xenon ow rates between 19 - 46 sccm.The HCA was centrally mounted in the annulus of the NASA-300MS Hall Thruster andwas operated in the spot and plume modes with additional data taken with an appliedmagnetic eld. Langmuir probes, retarding potential analyzers, and optical emission spec-troscopy were employed to measure plasma properties near the orice of the HCA and toassess the charge state of the near-eld plasma. Electron temperatures (2-6 eV) and plasmapotentials are consistent with probe-measured values in previous investigations. Operationwith an applied-eld yields higher discharge voltages, increased Xe III production, andincreased signals from the 833.5 nm C I line. While operating in plume mode and with anapplied eld, ion energy distribution measurements yield ions with energies signicantlyexceeding the applied discharge voltage. These ndings are correlated with high-frequencyoscillations associated with each mode.

Role of thermal heating on the voltage induced insulator-metal transition in VO2.

PubMed

Zimmers, A; Aigouy, L; Mortier, M; Sharoni, A; Wang, Siming; West, K G; Ramirez, J G; Schuller, Ivan K

2013-02-01

We show that the main mechanism for the dc voltage or dc current induced insulator-metal transition in vanadium dioxide VO(2) is due to local Joule heating and not a purely electronic effect. This "tour de force" experiment was accomplished by using the fluorescence spectra of rare-earth doped micron sized particles as local temperature sensors. As the insulator-metal transition is induced by a dc voltage or dc current, the local temperature reaches the transition temperature indicating that Joule heating plays a predominant role. This has critical implications for the understanding of the dc voltage or dc current induced insulator-metal transition and has a direct impact on applications which use dc voltage or dc current to externally drive the transition.

Temperature dependence of frequency response characteristics in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Lu, Xubing; Minari, Takeo; Liu, Chuan; Kumatani, Akichika; Liu, J.-M.; Tsukagoshi, Kazuhito

2012-04-01

The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator-semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

Non-Contact Thermal Characterization of NASA's HERMeS Hall Thruster

NASA Technical Reports Server (NTRS)

Huang, Wensheng; Kamhawi, Hani; Myers, James L.; Yim, John T.; Neff, Gregory

2015-01-01

The thermal characterization test of NASA's 12.5-kW Hall Effect Rocket with Magnetic Shielding has been completed. This thruster was developed to support a number of potential Solar Electric Propulsion Technology Demonstration Mission concepts, including the Asteroid Redirect Robotic Mission concept. As a part of the preparation for this characterization test, an infrared-based, non-contact thermal imaging system was developed to measure the temperature of various thruster surfaces that are exposed to high voltage or plasma. An in-situ calibration array was incorporated into the setup to improve the accuracy of the temperature measurement. The key design parameters for the calibration array were determined in a separate pilot test. The raw data from the characterization test was analyzed though further work is needed to obtain accurate anode temperatures. Examination of the front pole and discharge channel temperatures showed that the thruster temperature was driven more by discharge voltage than by discharge power. Operation at lower discharge voltages also yielded more uniform temperature distributions than at higher discharge voltages. When operating at high discharge voltage, increasing the magnetic field strength appeared to have made the thermal loading azimuthally more uniform.

Digital Soldering-Iron Tester

NASA Technical Reports Server (NTRS)

Buggle, R. N.; Metka, W. H., Jr

1984-01-01

Instrument reads tip temperature and contact potential in seconds. Tinned soldering tip touched to temperature sensitive button for 4 seconds and to voltage probe for 1 to 3 seconds. Tip temperature and voltage appear on digital displays. Instrument quickly gives assurance conditions are correct for reliable soldering.

Silicon Photomultiplier charaterization

NASA Astrophysics Data System (ADS)

Munoz, Leonel; Osornio, Leo; Para, Adam

2014-03-01

Silicon Photo Multiples (SiPM's) are relatively new photon detectors. They offer many advantages compared to photo multiplier tubes (PMT's) such as insensitivity to magnetic field, robustness at varying lighting levels, and low cost. The SiPM output wave forms are poorly understood. The experiment conducted collected waveforms of responses of Hamamatsu SiPM to incident laser pulse at varying temperatures and bias voltages. Ambient noise was characterized at all temperatures and bias voltages by averaging the waveforms. Pulse shape of the SiPM response was determined under different operating conditions: the pulse shape is nearly independent of the bias voltage but exhibits strong variation with temperature, consistent with the temperature variation of the quenching resistor. Amplitude of responses of the SiPM to low intensity laser light shows many peaks corresponding to the detection of 1,2,3 etc. photons. Amplitude of these pulses depends linearly on the bias voltage, enabling determination of the breakdown voltage at each temperature. Poisson statistics has been used to determine the average number of detected photons at each operating conditions. Department of Education Grant No. P0315090007 and the Department of Energy/ Fermi National Accelerator Laboratory.

Understanding local degradation of cycled Ni-rich cathode materials at high operating temperature for Li-ion batteries

NASA Astrophysics Data System (ADS)

Hwang, Sooyeon; Kim, Dong Hyun; Chung, Kyung Yoon; Chang, Wonyoung

2014-09-01

We utilize transmission electron microscopy in conjunction with electron energy loss spectroscopy to investigate local degradation that occurs in LixNi0.8Co0.15Al0.05O2 cathode materials (NCA) after 30 cycles with cutoff voltages of 4.3 V and 4.8 V at 55 °C. NCA has a homogeneous crystallographic structure before electrochemical reactions; however, we observed that 30 cycles of charge/discharge reactions induced inhomogeneity in the crystallographic and electronic structures and also introduced porosity particularly at surface area. These changes were more noticeable in samples cycled with higher cutoff voltage of 4.8 V. Effect of operating temperature was further examined by comparing electronic structures of oxygen of the NCA particles cycled at both room temperature and 55 °C. The working temperature has a greater impact on the NCA cathode materials at a cutoff voltage of 4.3 V that is the practical the upper limit voltage in most applications, while a cutoff voltage of 4.8 V is high enough to cause surface degradation even at room temperature.

Performance of the Micropower Voltage Reference ADR3430 Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2011-01-01

Electronic systems designed for use in space exploration systems are expected to be exposed to harsh temperatures. For example, operation at cryogenic temperatures is anticipated in space missions such as polar craters of the moon (-223 C), James Webb Space Telescope (-236 C), Mars (-140 C), Europa (-223 C), Titan (-178 C), and other deep space probes away from the sun. Similarly, rovers and landers on the lunar surface, and deep space probes intended for the exploration of Venus are expected to encounter high temperature extremes. Electronics capable of operation under extreme temperatures would not only meet the requirements of future spacebased systems, but would also contribute to enhancing efficiency and improving reliability of these systems through the elimination of the thermal control elements that present electronics need for proper operation under the harsh environment of space. In this work, the performance of a micropower, high accuracy voltage reference was evaluated over a wide temperature range. The Analog Devices ADR3430 chip uses a patented voltage reference architecture to achieve high accuracy, low temperature coefficient, and low noise in a CMOS process [1]. The device combines two voltages of opposite temperature coefficients to create an output voltage that is almost independent of ambient temperature. It is rated for the industrial temperature range of -40 C to +125 C, and is ideal for use in low power precision data acquisition systems and in battery-powered devices. Table 1 shows some of the manufacturer s device specifications.

Improved performance of the microbial electrolysis desalination and chemical-production cell with enlarged anode and high applied voltages.

PubMed

Ye, Bo; Luo, Haiping; Lu, Yaobin; Liu, Guangli; Zhang, Renduo; Li, Xiao

2017-11-01

The aim of this study was to improve performance of the microbial electrolysis desalination and chemical-production cell (MEDCC) using enlarged anode and high applied voltages. MEDCCs with anode lengths of 9 and 48cm (i.e., the 9cm-anode MEDCC and 48cm-anode MEDCC, respectively) were tested under different voltages (1.2-3.0V). Our results demonstrated for the first time that the MEDCC could maintain high performance even under the applied voltage higher than that for water dissociation (i.e., 1.8V). Under the applied voltage of 2.5V, the maximum current density in the 48cm-anode MEDCC reached 32.8±2.6A/m 2 , which is one of the highest current densities reported so far in the bioelectrochemical system (BES). The relative abundance of Geobacter was changed along the anode length. Our results show the great potential of the BES with enlarged anode and high applied voltages. Copyright © 2017 Elsevier Ltd. All rights reserved.

Domain switching kinetics in ferroelectric-resistive BiFeO3 thin film memories

NASA Astrophysics Data System (ADS)

Meng, Jianwei; Jiang, Jun; Geng, Wenping; Chen, Zhihui; Zhang, Wei; Jiang, Anquan

2015-02-01

We fabricated (00l) BiFeO3 (BFO) thin films in different growth modes on SrRuO3/SrTiO3 substrates using a pulsed laser deposition technique. X-ray diffraction patterns show an out-of-plane lattice constant of 4.03 Å and ferroelectric polarization of 82 µC/cm2 for the BFO thin film in a layer-by-layer growth mode (2D-BFO), larger than 3.96 Å and 51 µC/cm2 for the thin film in the 3D-island formation growth mode (3D-BFO). The 2D-BFO thin film at 300 K shows switchable on/off diode currents upon polarization flipping near a negative coercive voltage, which is nevertheless absent from the above 3D-BFO thin film. From a positive-up-negative-down pulse characterization technique, we measured domain switching current transients as well as polarization-voltage (Pf-Vf) hysteresis loops in both semiconducting thin films. Pf-Vf hysteresis loops after 1 µs-retention time show the preferred domain orientation pointing to bottom electrodes in a 3D-BFO thin film. The poor retention of the domains pointing to top electrodes can be improved considerably in a 2D-BFO thin film. From these measurements, we extracted domain switching time dependence of coercive voltage at temperatures of 78-300 K. From these dependences, we found coercive voltages in semiconducting ferroelectric thin films much higher than those in insulating thin films, disobeying the traditional Merz equation. Finally, an equivalent resistance model in description of free-carrier compensation of the front domain boundary charge is developed to interpret this difference. This equivalent resistance can be coincidently extracted either from domain switching time dependence of coercive voltage or from applied voltage dependence of domain switching current, which drops almost linearly with the temperature until down to 0 in a ferroelectric insulator at 78 K.

The effect of electrode temperature on the sparking voltage of short spark gaps

NASA Technical Reports Server (NTRS)

Silsbee, F B

1924-01-01

This report presents the results of an investigation to determine what effect the temperature of spark plug electrodes might have on the voltage at which a spark occurred. A spark gap was set up so that one electrode could be heated to temperatures up to 700 degrees C., while the other electrode and the air in the gap were maintained at room temperature. The sparking voltages were measured both with direct voltage and with voltage impulse from ignition coil. It was found that the sparking voltage of the gap decreased materially with increase of temperature. This change was more marked when the hot electrode was of negative polarity. The phenomena observed can be explained by the ionic theory of gaseous conduction, and serve to account for certain hitherto unexplained actions in the operation of internal combustion engines. These results indicate that the ignition spark will pass more readily when the spark-plug design is such as to make the electrodes run hot. This possible gain is, however, very closely limited by the danger of producing preignition. These experiments also show that sparking is somewhat easier when the hot electrode (which is almost always the central electrode) is negative than when the polarity is reversed.

Low-voltage-operated organic one-time programmable memory using printed organic thin-film transistors and antifuse capacitors.

PubMed

Jung, Soon-Won; Na, Bock Soon; Park, Chan Woo; Koo, Jae Bon

2014-11-01

We demonstrate an organic one-time programmable memory cell formed entirely at plastic-compatible temperatures. All the processes are performed at below 130 degrees C. Our memory cell consists of a printed organic transistor and an organic capacitor. Inkjet-printed organic transistors are fabricated by using high-k polymer dielectric blends comprising poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) for low-voltage operation. P(NDI2OD-T2) transistors have a high field-effect mobility of 0.2 cm2/Vs and a low operation gate voltage of less than 10 V. The operation voltage effectively decreases owing to the high permittivity of the P(VDF-TrFE):PMMA blended film. The data in the memory cell are programmed by electrically breaking the organic capacitor. The organic capacitor acts like an antifuse capacitor, because it is initially open, and it becomes permanently short-circuited by applying a high voltage. The organic memory cells are programmed with 4 V, and they are read out with 2 V. The memory data are read out by sensing the current in the memory cell. The printed organic one-time programmable memory is suitable for applications storing small amount of data, such as low-cost radio-frequency identification (RFID) tag.

Adhesion characteristics of VO2 ink film sintered by intense pulsed light for smart window

NASA Astrophysics Data System (ADS)

Youn, Ji Won; Lee, Seok-Jae; Kim, Kwang-Seok; Kim, Dae Up

2018-05-01

Progress in the development of energy-efficient coatings on glass has led to the research of smart windows that can modulate solar energy in response to an external stimulus like light, heat, or electricity. Thermochromic smart windows have attracted great interest because they provide highly visible transparency and intelligently controllable solar heat. VO2 has been widely used as coating material for thermochromism owing to its reversible metal-to-insulator transition near room temperature. However, unstable crystalline phases and expensive fabrication processes of VO2 films limit their facile application in smart windows. To overcome these restrictions, we manufactured nanoinks based on VO2 nanoparticles and fabricated films using spin coating and intense pulsed light (IPL) sintering on a quartz substrate. We examined adhesion between the VO2 nanoink films and the quartz substrate by varying the applied voltages and the number of pulses. The average adhesion of thin films increased to 83 and 108 N/m as the applied voltage during IPL sintering increased from 1400 to 2000 V. By increasing the number of pulses from 5 to 20, the adhesive strength increased from 83 to 94 N/m at 1400 V, and decreased from 108 to 96 N/m at 2000 V voltage.

The study of surface wetting, nanobubbles and boundary slip with an applied voltage: A review

PubMed Central

Pan, Yunlu; Zhao, Xuezeng

2014-01-01

Summary The drag of fluid flow at the solid–liquid interface in the micro/nanoscale is an important issue in micro/nanofluidic systems. Drag depends on the surface wetting, nanobubbles, surface charge and boundary slip. Some researchers have focused on the relationship between these interface properties. In this review, the influence of an applied voltage on the surface wettability, nanobubbles, surface charge density and slip length are discussed. The contact angle (CA) and contact angle hysteresis (CAH) of a droplet of deionized (DI) water on a hydrophobic polystyrene (PS) surface were measured with applied direct current (DC) and alternating current (AC) voltages. The nanobubbles in DI water and three kinds of saline solution on a PS surface were imaged when a voltage was applied. The influence of the surface charge density on the nanobubbles was analyzed. Then the slip length and the electrostatic force on the probe were measured on an octadecyltrichlorosilane (OTS) surface with applied voltage. The influence of the surface charge on the boundary slip and drag of fluid flow has been discussed. Finally, the influence of the applied voltage on the surface wetting, nanobubbles, surface charge, boundary slip and the drag of liquid flow are summarized. With a smaller surface charge density which could be achieved by applying a voltage on the surface, larger and fewer nanobubbles, a larger slip length and a smaller drag of liquid flow could be found. PMID:25161839

The study of surface wetting, nanobubbles and boundary slip with an applied voltage: A review.

PubMed

Pan, Yunlu; Bhushan, Bharat; Zhao, Xuezeng

2014-01-01

The drag of fluid flow at the solid-liquid interface in the micro/nanoscale is an important issue in micro/nanofluidic systems. Drag depends on the surface wetting, nanobubbles, surface charge and boundary slip. Some researchers have focused on the relationship between these interface properties. In this review, the influence of an applied voltage on the surface wettability, nanobubbles, surface charge density and slip length are discussed. The contact angle (CA) and contact angle hysteresis (CAH) of a droplet of deionized (DI) water on a hydrophobic polystyrene (PS) surface were measured with applied direct current (DC) and alternating current (AC) voltages. The nanobubbles in DI water and three kinds of saline solution on a PS surface were imaged when a voltage was applied. The influence of the surface charge density on the nanobubbles was analyzed. Then the slip length and the electrostatic force on the probe were measured on an octadecyltrichlorosilane (OTS) surface with applied voltage. The influence of the surface charge on the boundary slip and drag of fluid flow has been discussed. Finally, the influence of the applied voltage on the surface wetting, nanobubbles, surface charge, boundary slip and the drag of liquid flow are summarized. With a smaller surface charge density which could be achieved by applying a voltage on the surface, larger and fewer nanobubbles, a larger slip length and a smaller drag of liquid flow could be found.

An attempt to electrically enhance phytoremediation of arsenic contaminated water.

PubMed

Kubiak, Jan J; Khankhane, Premraj J; Kleingeld, Pieter J; Lima, Ana T

2012-04-01

Water polluted with arsenic presents a challenge for remediation. A combination of phyto- and electro-remediation was attempted in this study. Four tanks were setup in order to assess the arsenic removal ability of the two methods separately and in combination. Lemna minor was chosen for As remediation and collected from a ditch in Utrecht, The Netherlands. The tanks were filled with surface water without any pre-cleaning, therefore containing various elements including metals as Mn (2.9 mg L(-1)), Cu (0.05 mg L(-1)), Fe (1.39 mg L(-1)), and Ba (0.13 mg L(-1)). This water was then spiked with As and allocated to a feed container, guaranteeing a continuous flow of 0.12 mL s(-1) to each tank. Two experiments were performed: Exp. 1 with 3 consecutive stages with rising applied voltage and Exp. 2, with a constant voltage over a period of 6 d. Measurements of pH and temperature were taken every working day, as well as water samples from outlets of all tanks including feed container for control. From the present study, there was no evidence that As had been taken up by the plants, but a strong depletion of As was observed in the tanks where current was applied. Preliminary results clearly showed that applying voltage to the electrodes caused 90% removal of As from the spiked surface water. Crown Copyright © 2012. Published by Elsevier Ltd. All rights reserved.

EFFECTS OF ELECTROOSMOSIS ON SOIL TEMPERATURE AND HYDRAULIC HEAD: II. NUMERICAL SIMULATION

EPA Science Inventory

A numerical model to simulate the distributions of voltage, soil temperature, and hydraulic head during the field test of electroosmosis was developed. The two-dimensional governing equations for the distributions of voltage, soil temperature, and hydraulic head within a cylindri...

Cryogenic temperature dependence of the voltage transfer characteristics of CMOS inverters

NASA Astrophysics Data System (ADS)

Deen, M. J.

1988-08-01

The voltage transfer characteristics of CMOS inverters have been studied in detail as a function of temperature between 77 and 300 K and supply voltages between 2 and 20 V. The logic levels, maximum gain, unity gain points, noise margins and other parameters, such as ( VH - VL), all showed a marked improvement as the temperature was lowered. In particular, for one inverter with a supply of 5 V, the maximum gain increased from 57 to 105, ( VIH - VIL) decreased from 0.50 to 0.28 V and ( VH - VL) increased from 4.46 to 4.75 V on decreasing the temperature from 300 to 77 K. For all the inverters, these and other parameters showed a smooth monotonic improvement as the temperature was lowered. These and the other results obtained can be qualitatively explained as due to an increase in the absolute values in the threshold voltages of the PMOS and NMOS transistors and to an increase in the carrier mobility as the temperature was lowered.

Characterization of chromium compensated GaAs as an X-ray sensor material for charge-integrating pixel array detectors

NASA Astrophysics Data System (ADS)

Becker, J.; Tate, M. W.; Shanks, K. S.; Philipp, H. T.; Weiss, J. T.; Purohit, P.; Chamberlain, D.; Gruner, S. M.

2018-01-01

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and X-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage.

Electrical properties of fullerenol C{sub 60}(OH){sub 10}/Au interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakaino, Masamichi, E-mail: sun@ele.kyutech.ac.jp; Sun, Yong; Morimoto, Fumio

Electrical properties of the C{sub 60}(OH){sub 10}/Au contact have been studied by measuring its current-voltage characteristics in the temperature range of 300–500 K. The Schottky barrier of the C{sub 60}(OH){sub 10}/Au contact was confirmed to be 0.70±0.02 eV from Arrhenius plots of the current-voltage characteristics measured at various bias voltages as well as various preparation conditions of the C{sub 60}(OH){sub 10} material. Significant effect of the applied electric field on the barrier height has not been observed in the range of 0.1–2.0 MVm{sup −1}. The effects of both the charge transfer from C{sub 60} cage to OH groups and the crystallinity of themore » C{sub 60}(OH){sub 10} material on the Schottky barrier were discussed on the basis of x-ray photoemission spectroscopy and x-ray diffraction analyses.« less

Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

PubMed

Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

2017-08-23

We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

Properties of the surface generation-recombination noise in 1.94 μm GaSb-based laser diodes

NASA Astrophysics Data System (ADS)

Glemža, Justinas; Palenskis, Vilius; Pralgauskaitė, Sandra; Vyšniauskas, Juozas; Matukas, Jonas

2018-06-01

A detail investigation of generation-recombination (g-r) noise in 1.94 μm GaSb-based type-I ridge waveguide laser diodes (LDs) has been performed in a temperature range (230-295) K. Lorentzian-type noise spectra have been observed in the current range below the threshold at the forward and reverse biases of the LDs with the same characteristic time (3.7 μs) and activation energy (≈0.37 eV) of charge carriers transitions associated with the g-r processes. An equivalent electrical circuit possessing the voltage noise source is presented, which allows the description of both the current-voltage characteristic and the voltage fluctuation spectral density of the laser diode. Results indicate that the origin of the g-r noise in the investigated samples is the surface recombination caused by the surface leakage current channel between n+GaSb and p+GaSb contacts, which is practically independent from the applied bias polarity.

Hot embossing and thermal bonding of poly(methyl methacrylate) microfluidic chips using positive temperature coefficient ceramic heater.

PubMed

Wang, Xia; Zhang, Luyan; Chen, Gang

2011-11-01

As a self-regulating heating device, positive temperature coefficient ceramic heater was employed for hot embossing and thermal bonding of poly(methyl methacrylate) microfluidic chip because it supplied constant-temperature heating without electrical control circuits. To emboss a channel plate, a piece of poly(methyl methacrylate) plate was sandwiched between a template and a microscopic glass slide on a positive temperature coefficient ceramic heater. All the assembled components were pressed between two elastic press heads of a spring-driven press while a voltage was applied to the heater for 10 min. Subsequently, the embossed poly(methyl methacrylate) plate bearing negative relief of channel networks was bonded with a piece of poly(methyl methacrylate) cover sheet to obtain a complete microchip using a positive temperature coefficient ceramic heater and a spring-driven press. High quality microfluidic chips fabricated by using the novel embossing/bonding device were successfully applied in the electrophoretic separation of three cations. Positive temperature coefficient ceramic heater indicates great promise for the low-cost production of poly(methyl methacrylate) microchips and should find wide applications in the fabrication of other thermoplastic polymer microfluidic devices.

Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer

NASA Astrophysics Data System (ADS)

Chattopadhyay, P.

1994-10-01

The role of discrete localized states on the current-voltage characteristics of metal-semiconductor contact is examined. It is seen that, because of these localized states, the logarithmic current vs voltage characteristics become nonlinear. Such nonlinearity is found sensitive to the temperature, and the energy and density of the localized states. The predicted temperature dependence of barrier height and the current-voltage characteristics are in agreement with the experimental results of Aboelfotoh [ Phys. Rev. B39, 5070 (1989)].

Influence of the magnetic field profile on ITER conductor testing

NASA Astrophysics Data System (ADS)

Nijhuis, A.; Ilyin, Y.; ten Kate, H. H. J.

2006-08-01

We performed simulations with the numerical CUDI-CICC code on a typical short ITER (International Thermonuclear Experimental Reactor) conductor test sample of dual leg configuration, as usually tested in the SULTAN test facility, and made a comparison with the new EFDA-Dipole test facility offering a larger applied DC field region. The new EFDA-Dipole test facility, designed for short sample testing of conductors for ITER, has a homogeneous high field region of 1.2 m, while in the SULTAN facility this region is three times shorter. The inevitable non-uniformity of the current distribution in the cable, introduced by the joints at both ends, has a degrading effect on voltage-current (VI) and voltage-temperature (VT) characteristics, particularly for these short samples. This can easily result in an underestimation or overestimation of the actual conductor performance. A longer applied DC high field region along a conductor suppresses the current non-uniformity by increasing the overall longitudinal cable electric field when reaching the current sharing mode. The numerical interpretation study presented here gives a quantitative analysis for a relevant practical case of a test of a short sample poloidal field coil insert (PFCI) conductor in SULTAN. The simulation includes the results of current distribution analysis from self-field measurements with Hall sensor arrays, current sharing measurements and inter-petal resistance measurements. The outcome of the simulations confirms that the current uniformity improves with a longer high field region but the 'measured' VI transition is barely affected, though the local peak voltages become somewhat suppressed. It appears that the location of the high field region and voltage taps has practically no influence on the VI curve as long as the transverse voltage components are adequately cancelled. In particular, for a thin conduit wall, the voltage taps should be connected to the conduit in the form of an (open) azimuthally soldered wire, averaging the transverse conduit surface potentials initiated in the joints.

An inherent curvature-compensated voltage reference using non-linearity of gate coupling coefficient

NASA Astrophysics Data System (ADS)

Hande, Vinayak; Shojaei Baghini, Maryam

2015-08-01

A novel current-mode voltage reference circuit which is capable of generating sub-1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature compensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to reduce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24 μA. A temperature coefficient of 9 ppm/°C is achieved over -25 to 125 °C temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × 110 μm2

Design and realization of high voltage disconnector condition monitoring system

NASA Astrophysics Data System (ADS)

Shi, Jinrui; Xu, Tianyang; Yang, Shuixian; Li, Buoyang

2017-08-01

The operation status of the high voltage disconnector directly affects the safe and stable operation of the power system. This article uses the wireless frequency hopping communication technology of the communication module to achieve the temperature acquisition of the switch contacts and high voltage bus, to introduce the current value of the loop in ECS, and judge the operation status of the disconnector by considering the ambient temperature, calculating the temperature rise; And through the acquisition of the current of drive motor in the process of switch closing and opening, and fault diagnosis of the disconnector by analyzing the change rule of the drive motor current, the condition monitoring of the high voltage disconnector is realized.

Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

NASA Technical Reports Server (NTRS)

Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

2012-01-01

We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

Low Temperature Performance of High Power Density DC/DC Converter Modules

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.; Hammond, Ahmad; Gerber, Scott; Patterson, Richard L.; Overton, Eric

2001-01-01

In this paper, two second-generation high power density DC/DC converter modules have been evaluated at low operating temperatures. The power rating of one converter (Module 1) was specified at 150 W with an input voltage range of 36 to 75 V and output voltage of 12 V. The other converter (Module 2) was specified at 100 W with the same input voltage range and an output voltage of 3.3 V. The converter modules were evaluated in terms of their performance as a function of operating temperature in the range of 25 to -140 C. The experimental procedures along with the experimental data obtained are presented and discussed in this paper.

Improved Control of Charging Voltage for Li-Ion Battery

NASA Technical Reports Server (NTRS)

Timmerman, Paul; Bugga, Ratnakumar

2006-01-01

The protocol for charging a lithium-ion battery would be modified, according to a proposal, to compensate for the internal voltage drop (charging current internal resistance of the battery). The essence of the modification is to provide for measurement of the internal voltage drop and to increase the terminal-voltage setting by the amount of the internal voltage drop. Ordinarily, a lithium-ion battery is charged at constant current until its terminal voltage attains a set value equal to the nominal full-charge potential. The set value is chosen carefully so as not to exceed the lithium-plating potential, because plated lithium in metallic form constitutes a hazard. When the battery is charged at low temperature, the internal voltage drop is considerable because the electrical conductivity of the battery electrolyte is low at low temperature. Charging the battery at high current at any temperature also gives rise to a high internal voltage drop. In some cases, the internal voltage drop can be as high as 1 volt per cell. Because the voltage available for charging is less than the terminal voltage by the amount of the internal voltage drop, the battery is not fully charged (see figure), even when the terminal voltage reaches the set value. In the modified protocol, the charging current would be periodically interrupted so that the zero-current battery-terminal voltage indicative of the state of charge could be measured. The terminal voltage would also be measured at full charging current. The difference between the full-current and zero-current voltages would equal the internal voltage drop. The set value of terminal voltage would then be increased beyond the nominal full-charge potential by the amount of the internal voltage drop. This adjustment would be performed repeatedly, in real time, so that the voltage setting would track variations in the internal voltage drop to afford full charge without risk of lithium plating. If the charging current and voltage settings were controlled by a computer, then this method of charge control could readily be implemented in software.

Synaptic transistor with a reversible and analog conductance modulation using a Pt/HfOx/n-IGZO memcapacitor

NASA Astrophysics Data System (ADS)

Yang, Paul; Kim, Hyung Jun; Zheng, Hong; Beom, Geon Won; Park, Jong-Sung; Kang, Chi Jung; Yoon, Tae-Sik

2017-06-01

A synaptic transistor emulating the biological synaptic motion is demonstrated using the memcapacitance characteristics in a Pt/HfOx/n-indium-gallium-zinc-oxide (IGZO) memcapacitor. First, the metal-oxide-semiconductor (MOS) capacitor with Pt/HfOx/n-IGZO structure exhibits analog, polarity-dependent, and reversible memcapacitance in capacitance-voltage (C-V), capacitance-time (C-t), and voltage-pulse measurements. When a positive voltage is applied repeatedly to the Pt electrode, the accumulation capacitance increases gradually and sequentially. The depletion capacitance also increases consequently. The capacitances are restored by repeatedly applying a negative voltage, confirming the reversible memcapacitance. The analog and reversible memcapacitance emulates the potentiation and depression synaptic motions. The synaptic thin-film transistor (TFT) with this memcapacitor also shows the synaptic motion with gradually increasing drain current by repeatedly applying the positive gate and drain voltages and reversibly decreasing one by applying the negative voltages, representing synaptic weight modulation. The reversible and analog conductance change in the transistor at both the voltage sweep and pulse operations is obtained through the memcapacitance and threshold voltage shift at the same time. These results demonstrate the synaptic transistor operations with a MOS memcapacitor gate stack consisting of Pt/HfOx/n-IGZO.

Synaptic transistor with a reversible and analog conductance modulation using a Pt/HfOx/n-IGZO memcapacitor.

PubMed

Yang, Paul; Jun Kim, Hyung; Zheng, Hong; Won Beom, Geon; Park, Jong-Sung; Jung Kang, Chi; Yoon, Tae-Sik

2017-06-02

A synaptic transistor emulating the biological synaptic motion is demonstrated using the memcapacitance characteristics in a Pt/HfOx/n-indium-gallium-zinc-oxide (IGZO) memcapacitor. First, the metal-oxide-semiconductor (MOS) capacitor with Pt/HfOx/n-IGZO structure exhibits analog, polarity-dependent, and reversible memcapacitance in capacitance-voltage (C-V), capacitance-time (C-t), and voltage-pulse measurements. When a positive voltage is applied repeatedly to the Pt electrode, the accumulation capacitance increases gradually and sequentially. The depletion capacitance also increases consequently. The capacitances are restored by repeatedly applying a negative voltage, confirming the reversible memcapacitance. The analog and reversible memcapacitance emulates the potentiation and depression synaptic motions. The synaptic thin-film transistor (TFT) with this memcapacitor also shows the synaptic motion with gradually increasing drain current by repeatedly applying the positive gate and drain voltages and reversibly decreasing one by applying the negative voltages, representing synaptic weight modulation. The reversible and analog conductance change in the transistor at both the voltage sweep and pulse operations is obtained through the memcapacitance and threshold voltage shift at the same time. These results demonstrate the synaptic transistor operations with a MOS memcapacitor gate stack consisting of Pt/HfOx/n-IGZO.

Simultaneous determination of ezetimibe and simvastatin in pharmaceutical preparations by MEKC.

PubMed

Yardimci, Ceren; Ozaltin, Nuran

2010-02-01

A micellar electrokinetic capillary chromatography method was developed and validated for the simultaneous determination of ezetimibe and simvastatin in pharmaceutical preparations. The influence of buffer concentration, buffer pH, sodium dodecyl sulphate (SDS) concentration, organic modifier, capillary temperature, applied voltage, and injection time was investigated, and the method validation studies were performed. The optimum separation for these analytes was achieved in less than 10 min at 30 degrees C with a fused-silica capillary column (56 cm x 50 microm i.d.) and a 25mM borate buffer at pH 9.0 containing 25mM SDS and 10% (v/v) acetonitrile. The samples were injected hydrodynamically for 3 s at 50 mbar, and the applied voltage was +30.0 kV. Detection wavelength was set at 238 nm. Diflunisal was used as internal standard. The method was suitably validated with respect to stability, specificity, linearity, limits of detection and quantification, accuracy, precision, and robustness. The limits of detection and quantification were 1.0 and 2.0 microg/mL for both ezetimibe and simvastatin, respectively. The method developed was successfully applied to the simultaneous determination of ezetimibe and simvastatin in pharmaceutical preparations.

Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures

NASA Astrophysics Data System (ADS)

Idris, M. I.; Weng, M. H.; Chan, H.-K.; Murphy, A. E.; Clark, D. T.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2016-12-01

In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 °C) of the SiO2/SiC interface is investigated. Capacitance-voltage measurements taken for a range of frequencies have been utilized to extract parameters including flatband voltage, threshold voltage, effective oxide charge, and interface state density. The variation of these parameters with temperature has been investigated for bias sweeps in opposing directions and a comparison made between phosphorous doped and as-grown oxides. At room temperature, the effective oxide charge for SiO2 may be reduced by the phosphorous termination of dangling bonds at the interface. However, at high temperatures, the effective charge in the phosphorous doped oxide remains unstable and effects such as flatband voltage shift and threshold voltage shift dominate the characteristics. The instability in these characteristics was found to result from the trapped charges in the oxide (±1012 cm-3) or near interface traps at the interface of the gate oxide and the semiconductor (1012-1013 cm-2 eV-1). Hence, the performance enhancements observed for phosphorous doped oxides are not realised in devices operated at elevated temperatures.

Vibration, buckling and smart control of microtubules using piezoelectric nanoshells under electric voltage in thermal environment

NASA Astrophysics Data System (ADS)

Farajpour, A.; Rastgoo, A.; Mohammadi, M.

2017-03-01

Piezoelectric nanomaterials such as zinc oxide (ZnO) are of low toxicity and have many biomedical applications including optical imaging, drug delivery, biosensing and harvesting biomechanical energy using hybrid nanogenerators. In this paper, the vibration, buckling and smart control of microtubules (MTs) embedded in an elastic medium in thermal environment using a piezoelectric nanoshell (PNS) are investigated. The MT and PNS are considered to be coupled by a filament network. The PNS is subjected to thermal loads and an external electric voltage which operates to control the mechanical behavior of the MT. Using the nonlocal continuum mechanics, the governing differential equations are derived. An exact solution is presented for simply supported boundary conditions. The differential quadrature method is also used to solve the governing equations for other boundary conditions. A detailed parametric study is conducted to investigate the effects of the elastic constants of surrounding medium and internal filament matrix, scale coefficient, electric voltage, the radius-to-thickness ratio of PNSs and temperature change on the smart control of MTs. It is found that the applied electric voltage can be used as an effective controlling parameter for the vibration and buckling of MTs.

Moderately nonlinear diffuse-charge dynamics under an ac voltage.

PubMed

Stout, Robert F; Khair, Aditya S

2015-09-01

The response of a symmetric binary electrolyte between two parallel, blocking electrodes to a moderate amplitude ac voltage is quantified. The diffuse charge dynamics are modeled via the Poisson-Nernst-Planck equations for a dilute solution of point-like ions. The solution to these equations is expressed as a Fourier series with a voltage perturbation expansion for arbitrary Debye layer thickness and ac frequency. Here, the perturbation expansion in voltage proceeds in powers of V_{o}/(k_{B}T/e), where V_{o} is the amplitude of the driving voltage and k_{B}T/e is the thermal voltage with k_{B} as Boltzmann's constant, T as the temperature, and e as the fundamental charge. We show that the response of the electrolyte remains essentially linear in voltage amplitude at frequencies greater than the RC frequency of Debye layer charging, D/λ_{D}L, where D is the ion diffusivity, λ_{D} is the Debye layer thickness, and L is half the cell width. In contrast, nonlinear response is predicted at frequencies below the RC frequency. We find that the ion densities exhibit symmetric deviations from the (uniform) equilibrium density at even orders of the voltage amplitude. This leads to the voltage dependence of the current in the external circuit arising from the odd orders of voltage. For instance, the first nonlinear contribution to the current is O(V_{o}^{3}) which contains the expected third harmonic but also a component oscillating at the applied frequency. We use this to compute a generalized impedance for moderate voltages, the first nonlinear contribution to which is quadratic in V_{o}. This contribution predicts a decrease in the imaginary part of the impedance at low frequency, which is due to the increase in Debye layer capacitance with increasing V_{o}. In contrast, the real part of the impedance increases at low frequency, due to adsorption of neutral salt from the bulk to the Debye layer.

Reliability and efficacy of organic passivation for polycrystalline silicon solar cells at room temperature

NASA Astrophysics Data System (ADS)

Shinde, Onkar S.; Funde, Adinath M.; Jadkar, Sandesh R.; Dusane, Rajiv O.; Dhere, Neelkanth G.; Ghaisas, Subhash V.

2016-09-01

Oleylamine is used as a passivating layer instead of commercial high temperature SiNx. Oleylamine coating applied on the n-type emitter side with p-type base polycrystalline silicon solar cells at room temperature using a simple spin coating method. It has been observed that there is 16% increase in efficiency after Oleylamine coating. Further, the solar cell was subjected to standard characterization namely current-voltage measurement for electrical parameters and Fourier transform infrared spectroscopy to understand the interaction of emitter surface and passivating Oleylamine. However, the passivation layer is not stable due to the reaction between Oleylamine and ambient air content such as humidity and carbon dioxide. This degradation can be prevented with suitable overcoating.

Development of double-pulse lasers ablation system for generating gold ion source under applying an electric field

NASA Astrophysics Data System (ADS)

Khalil, A. A. I.

2015-12-01

Double-pulse lasers ablation (DPLA) technique was developed to generate gold (Au) ion source and produce high current under applying an electric potential in an argon ambient gas environment. Two Q-switched Nd:YAG lasers operating at 1064 and 266 nm wavelengths are combined in an unconventional orthogonal (crossed-beam) double-pulse configuration with 45° angle to focus on a gold target along with a spectrometer for spectral analysis of gold plasma. The properties of gold plasma produced under double-pulse lasers excitation were studied. The velocity distribution function (VDF) of the emitted plasma was studied using a dedicated Faraday-cup ion probe (FCIP) under argon gas discharge. The experimental parameters were optimized to attain the best signal to noise (S/N) ratio. The results depicted that the VDF and current signals depend on the discharge applied voltage, laser intensity, laser wavelength and ambient argon gas pressure. A seven-fold increases in the current signal by increasing the discharge applied voltage and ion velocity under applying double-pulse lasers field. The plasma parameters (electron temperature and density) were also studied and their dependence on the delay (times between the excitation laser pulse and the opening of camera shutter) was investigated as well. This study could provide significant reference data for the optimization and design of DPLA systems engaged in laser induced plasma deposition thin films and facing components diagnostics.

Voltage droop Coordinating Control applied in UPFC and STATCOM system

NASA Astrophysics Data System (ADS)

Junhui, Huang; Zhuyi, Peng; Chengjie, Ni; Yiqing, Xu; Jiliang, Xue

2018-04-01

When UPFC, unified power flow controller is applied with other FACTS into power grid, it is possible that the voltage controlled vibrates constantly to response to a sudden reactive power turbulent in grid if the parameters of these FACTS are not coordinating reasonably. Moreover, the reactive power generated by these equipment will intertwine unexpectedly. The article proposes a method named voltage-reactive power droop control to allow the reference voltage fluctuating around the rating voltage so that the vibration is reduced and the power distribution is improved. Finally, the article cite a electric-magnetic simulation by EMTDC models of east-China power grid to prove it effective when applied to improve the response characteristics to sudden turbulence in power grid.

Thermal latency adds to lesion depth after application of high-power short-duration radiofrequency energy: Results of a computer-modeling study.

PubMed

Irastorza, Ramiro M; d'Avila, Andre; Berjano, Enrique

2018-02-01

The use of ultra-short RF pulses could achieve greater lesion depth immediately after the application of the pulse due to thermal latency. A computer model of irrigated-catheter RF ablation was built to study the impact of thermal latency on the lesion depth. The results showed that the shorter the RF pulse duration (keeping energy constant), the greater the lesion depth during the cooling phase. For instance, after a 10-second pulse, lesion depth grew from 2.05 mm at the end of the pulse to 2.39 mm (17%), while after an ultra-short RF pulse of only 1 second the extra growth was 37% (from 2.22 to 3.05 mm). Importantly, short applications resulted in deeper lesions than long applications (3.05 mm vs. 2.39 mm, for 1- and 10-second pulse, respectively). While shortening the pulse duration produced deeper lesions, the associated increase in applied voltage caused overheating in the tissue: temperatures around 100 °C were reached at a depth of 1 mm in the case of 1- and 5-second pulses. However, since the lesion depth increased during the cooling period, lower values of applied voltage could be applied in short durations in order to obtain lesion depths similar to those in longer durations while avoiding overheating. The thermal latency phenomenon seems to be the cause of significantly greater lesion depth after short-duration high-power RF pulses. Balancing the applied total energy when the voltage and duration are changed is not the optimal strategy since short pulses can also cause overheating. © 2017 Wiley Periodicals, Inc.

Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

NASA Technical Reports Server (NTRS)

Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.;

Highly Transparent and Conductive Metallized Nanofibers by Electrospinning and Electroplating

NASA Astrophysics Data System (ADS)

Yoon, Sam S.; Yarin, Alexander L.

2017-11-01

Transparent conducting films (TCFs) and transparent heaters (THs) are of interest for a wide variety of applications, from displays to window defrosters. Here, we demonstrate production of highly flexible, conducting, and transparent copper (Cu), nickel (Ni), platinum (Pt), and silver (Ag) nanofibers suitable for use not only in TCFs and THs but also in some other engineering applications. The merging of fibers at their intersections (i.e. self-junctioning) minimizes contact resistance in these films. These metallized nanofibers exhibited a remarkably low sheet resistance at a high optical transmittance. This low sheet resistance allows them to serve as low-voltage heaters, achieving a high heating temperature at a relatively low applied voltage. These nanofibers are free-standing, flexible, stretchable, and their mechanical reliability was confirmed through various mechanical endurance tests.

Study of the Dependence on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

NASA Technical Reports Server (NTRS)

Bandler, Simon

2011-01-01

At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in the AC bias configuration. For x-ray photons at 6keV the AC biased pixel shows a best energy resolution of 3.7eV, which is about a factor of 2 worse than the energy resolution observed in identical DC-biased pixels. To better understand the reasons of this discrepancy, we investigated the detector performance as a function of temperature, bias working point and applied magnetic field. A strong periodic dependence of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recent weak-link behaviour observed inTES microcalorimeters.

Electrospun poly(methyl methacrylate) fibrous mat showing piezoelectric properties

NASA Astrophysics Data System (ADS)

Nobeshima, Taiki; Ishii, Yuya; Sakai, Heisuke; Uemura, Sei; Yoshida, Manabu

2018-05-01

A piezoelectric effect, such as actuation behavior with voltage application, could be observed from a poly(methyl methacrylate) (PMMA) fibrous mat fabricated by electrospinning. This fibrous mat increased or decreased its thickness in accordance with the polarity of the applied voltage, which appears to be an inverse piezoelectric effect. The appearance d T constant was as large as 8.5 nm/V owing to the softness of the fibrous structure, and the coupling constant K T = 0.31 indicated its efficient piezoelectric property. This piezoelectric behavior was repeatedly observed to be stable at room temperature. In addition, the polarization components of the fibrous mat, which are considered to be the origin of its piezoelectric effect, and its relaxation behavior were confirmed from the results of thermally stimulated current measurements.

Tip-induced domain structures and polarization switching in ferroelectric amino acid glycine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seyedhosseini, E., E-mail: Seyedhosseini@ua.pt; Ivanov, M.; Bdikin, I.

2015-08-21

Bioorganic ferroelectrics and piezoelectrics are becoming increasingly important in view of their intrinsic compatibility with biological environment and biofunctionality combined with strong piezoelectric effect and a switchable polarization at room temperature. Here, we study tip-induced domain structures and polarization switching in the smallest amino acid β-glycine, representing a broad class of non-centrosymmetric amino acids. We show that β-glycine is indeed a room-temperature ferroelectric and polarization can be switched by applying a bias to non-polar cuts via a conducting tip of atomic force microscope (AFM). Dynamics of these in-plane domains is studied as a function of an applied voltage and pulsemore » duration. The domain shape is dictated by polarization screening at the domain boundaries and mediated by growth defects. Thermodynamic theory is applied to explain the domain propagation induced by the AFM tip. Our findings suggest that the properties of β-glycine are controlled by the charged domain walls which in turn can be manipulated by an external bias.« less

Characteristics of the NASA Lewis bumpy-torus plasma generated with positive applied potentials

NASA Technical Reports Server (NTRS)

Roth, J. R.; Gerdin, G. A.; Richardson, R. W.

1976-01-01

Experimental observations were made during steady-state operation of a bumpy-torus plasma at input powers up to 150 kW in deuterium and helium gas and with positive potentials applied to the midplane electrodes. In this steady-state ion heating method a modified Penning discharge is operated such that the plasma is acted upon by a combination of strong electric and magnetic fields. Experimental investigation of a deuterium plasma revealed electron temperatures from 14 to 140 eV and ion kinetic temperatures from 160 to 1785 eV. At least two distinct modes of operation exist. Experimental data shows that the average ion residence time in the plasma is virtually independent of the magnetic field strength. Data was taken when all 12 anode rings were at high voltage, and in other symmetric configurations in which the toroidal plasma was generated by applying positive potentials to six anode rings, three anode rings, and a single anode ring.

Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teyssedre, G., E-mail: gilbert.teyssedre@laplace.univ-tlse.fr; Laurent, C.; CNRS, LAPLACE, F-31062 Toulouse

Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are modelmore » of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30–60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10{sup −14}–10{sup −13} m{sup 2} V{sup −1} s{sup −1} for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.« less

Thermal characterization of GaN-based laser diodes by forward-voltage method

NASA Astrophysics Data System (ADS)

Feng, M. X.; Zhang, S. M.; Jiang, D. S.; Liu, J. P.; Wang, H.; Zeng, C.; Li, Z. C.; Wang, H. B.; Wang, F.; Yang, H.

2012-05-01

An expression of the relation between junction temperature and forward voltage common for both GaN-based laser diodes (LDs) and light emitting diodes is derived. By the expression, the junction temperature of GaN-based LDs emitting at 405 nm was measured at different injection current and compared with the result of micro-Raman spectroscopy, showing that the expression is reasonable. In addition, the activation energy of Mg in AlGaN/GaN superlattice layers is obtained based on the temperature dependence of forward voltage.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bauer, Todd; Hamlet, Jason; Martin, Mitchell Tyler

We are using the DoD MIL-STD as our guide for microelectronics aging (MIL-STD 883J, Method 1016.2: Life/Reliability Characterization Tests). In that document they recommend aging at 3 temperatures between 200-300C, separated by at least 25C, with the supply voltage at the maximum recommended voltage for the devices at 125C (3.6V in our case). If that voltage causes excessive current or power then it can be reduced and the duration of the tests extended. The MIL-STD also recommends current limiting resistors in series with the supply. Since we don’t have much time and we may not have enough ovens and othermore » equipment, two temperatures separated by at least 50C would be an acceptable backup plan. To ensure a safe range of conditions is used, we are executing 24-hour step tests. For these, we will apply the stress for 24 hours and then measure the device to make sure it wasn’t damaged. During the stress the PUFs should be exercised, but we don’t need to measure their response. Rather, at set intervals our devices should be returned to nominal temperature (under bias), and then measured. The MIL-STD puts these intervals at 4, 8, 16, 32, 64, 128, 256, 512 and 1000 hours, although the test can be stopped early if 75% of the devices have failed. A final recommendation per the MIL-STD is that at least 40 devices should be measured under each condition. Since we only have 25 parts, we will place 10 devices in each of two stress conditions.« less

A novel method for in-situ monitoring of local voltage, temperature and humidity distributions in fuel cells using flexible multi-functional micro sensors.

PubMed

Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

2011-01-01

In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it.

A Novel Method for In-Situ Monitoring of Local Voltage, Temperature and Humidity Distributions in Fuel Cells Using Flexible Multi-Functional Micro Sensors

PubMed Central

Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

2011-01-01

In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it. PMID:22319361

Electrical Characterization of Temperature Dependent Resistive Switching in Pr0.7C0.3MnO3

NASA Astrophysics Data System (ADS)

Lopez, Melinda; Salvo, Christopher; Tsui, Stephen

2012-02-01

Resistive switching offers a non-volatile and reversible means to possibly create a more physically compact yet larger access capacity in memory technology. While there has been a great deal of research conducted on this electrical property in oxide materials, there is still more to be learned about this at both high voltage pulsing and cryogenic temperatures. In this work, the electrical properties of a PCMO-metal interface switch were examined after application of voltage pulsing varying from 100 V to 1000 V and at temperatures starting at 293 K and lowered to 80 K. What was discovered was that below temperatures of 150 K, the resistive switching began to decrease across all voltage pulsing and that at all temperatures before this cessation, the change in resistive switching increased with higher voltage pulsing. We suggest that a variable density of charge traps at the interface is a likely mechanism, and work continues to extract more details.

Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Qiu, WeiCheng; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn

2014-11-14

The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be themore » best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.« less

Electromagnetic fields (UHF) increase voltage sensitivity of membrane ion channels; possible indication of cell phone effect on living cells.

PubMed

Ketabi, N; Mobasheri, H; Faraji-Dana, R

2015-03-01

The effects of ultra high frequency (UHF) nonionizing electromagnetic fields (EMF) on the channel activities of nanopore forming protein, OmpF porin, were investigated. The voltage clamp technique was used to study the single channel activity of the pore in an artificial bilayer in the presence and absence of the electromagnetic fields at 910 to 990 MHz in real time. Channel activity patterns were used to address the effect of EMF on the dynamic, arrangement and dielectric properties of water molecules, as well as on the hydration state and arrangements of side chains lining the channel barrel. Based on the varied voltage sensitivity of the channel at different temperatures in the presence and absence of EMF, the amount of energy transferred to nano-environments of accessible groups was estimated to address the possible thermal effects of EMF. Our results show that the effects of EMF on channel activities are frequency dependent, with a maximum effect at 930 MHz. The frequency of channel gating and the voltage sensitivity is increased when the channel is exposed to EMF, while its conductance remains unchanged at all frequencies applied. We have not identified any changes in the capacitance and permeability of membrane in the presence of EMF. The effect of the EMF irradiated by cell phones is measured by Specific Absorption Rate (SAR) in artificial model of human head, Phantom. Thus, current approach applied to biological molecules and electrolytes might be considered as complement to evaluate safety of irradiating sources on biological matter at molecular level.

Effective screening length of isotropic liquid samples submitted to an applied voltage.

PubMed

Zola, R S; Evangelista, L R; Barbero, G

2006-05-25

A cell of isotropic liquid in the shape of a slab of thickness d and containing ionic impurities is considered. It is shown that the screening effect produced by the ionic charges on the external field is characterized by an effective surface length, lambda(S)(U), depending on the applied voltage U. The analysis indicates that lambda(S)(U)) < lambda(D) when the applied voltage is very large, and lambda(S)(U) --> lambda(D) for very small values of the applied voltage, where lambda(D) is the Debye screening length. The presence of the ions is responsible also for a counterpotential, v, that for small U is such to cancel the effective electric field in the sample, whereas in the opposite limit it is inversely proportional to the applied difference of potential.

Simplified fast neutron dosimeter

DOEpatents

Sohrabi, Mehdi

1979-01-01

Direct fast-neutron-induced recoil and alpha particle tracks in polycarbonate films may be enlarged for direct visual observation and automated counting procedures employing electrochemical etching techniques. Electrochemical etching is, for example, carried out in a 28% KOH solution at room temperature by applying a 2000 V peak-to-peak voltage at 1 kHz frequency. Such recoil particle amplification can be used for the detection of wide neutron dose ranges from 1 mrad. to 1000 rads. or higher, if desired.

In-situ Monitoring of Internal Local Temperature and Voltage of Proton Exchange Membrane Fuel Cells

PubMed Central

Lee, Chi-Yuan; Fan, Wei-Yuan; Hsieh, Wei-Jung

2010-01-01

The distribution of temperature and voltage of a fuel cell are key factors that influence performance. Conventional sensors are normally large, and are also useful only for making external measurements of fuel cells. Centimeter-scale sensors for making invasive measurements are frequently unable to accurately measure the interior changes of a fuel cell. This work focuses mainly on fabricating flexible multi-functional microsensors (for temperature and voltage) to measure variations in the local temperature and voltage of proton exchange membrane fuel cells (PEMFC) that are based on micro-electro-mechanical systems (MEMS). The power density at 0.5 V without a sensor is 450 mW/cm2, and that with a sensor is 426 mW/cm2. Since the reaction area of a fuel cell with a sensor is approximately 12% smaller than that without a sensor, but the performance of the former is only 5% worse. PMID:22163556

In-situ monitoring of internal local temperature and voltage of proton exchange membrane fuel cells.

PubMed

Lee, Chi-Yuan; Fan, Wei-Yuan; Hsieh, Wei-Jung

2010-01-01

The distribution of temperature and voltage of a fuel cell are key factors that influence performance. Conventional sensors are normally large, and are also useful only for making external measurements of fuel cells. Centimeter-scale sensors for making invasive measurements are frequently unable to accurately measure the interior changes of a fuel cell. This work focuses mainly on fabricating flexible multi-functional microsensors (for temperature and voltage) to measure variations in the local temperature and voltage of proton exchange membrane fuel cells (PEMFC) that are based on micro-electro-mechanical systems (MEMS). The power density at 0.5 V without a sensor is 450 mW/cm(2), and that with a sensor is 426 mW/cm(2). Since the reaction area of a fuel cell with a sensor is approximately 12% smaller than that without a sensor, but the performance of the former is only 5% worse.

INVESTIGATION OF LEAKAGE CURRENT BEHAVIOR OF Pt/Bi0.975La0.025Fe0.975Ni0.025O3/Pt CAPACITOR MEASURED AT DIFFERENT TEMPERATURES

NASA Astrophysics Data System (ADS)

Dai, Xiu Hong; Zhao, Hong Dong; Zhang, Lei; Zhu, Hui Juan; Li, Xiao Hong; Zhao, Ya Jun; Guo, Jian Xin; Zhao, Qing Xun; Wang, Ying Long; Liu, Bao Ting; Ma, Lian Xi

2014-03-01

Polycrystalline Bi0.975La0.025Fe0.975Ni0.025O3 (BLFNO) film is fabricated on Pt/Ti/SiO2/Si(111) substrate by sol-gel method. It is found that the well-crystallized BLFNO film is polycrystalline, and the Pt/BLFNO/Pt capacitor possesses good ferroelectric properties with remnant polarization of 74 μC/cm2 at electric field of 833 kV/cm. Moreover, it is also found that the leakage current density of the Pt/BLFNO/Pt capacitor increases with the increase of measurement temperature ranging from 100 to 300 K. The leakage density of the Pt/BLFNO/Pt capacitor satisfies space-charge-limited conduction (SCLC) at higher electric field and shows little dependence on voltage polarity and temperature, but shows polarity and temperature dependence at lower applied electric field. With temperature increasing from 100 to 300 K at lower applied electric field, the most likely conduction mechanism is from Ohmic behavior to SCLC for positive biases, but no clear dominant mechanism for negative biases is shown.

Far-field brainstem responses evoked by vestibular and auditory stimuli exhibit increases in interpeak latency as brain temperature is decreased

NASA Technical Reports Server (NTRS)

Hoffman, L. F.; Horowitz, J. M.

1984-01-01

The effect of decreasing of brain temperature on the brainstem auditory evoked response (BAER) in rats was investigated. Voltage pulses, applied to a piezoelectric crystal attached to the skull, were used to evoke stimuli in the auditory system by means of bone-conducted vibrations. The responses were recorded at 37 C and 34 C brain temperatures. The peaks of the BAER recorded at 34 C were delayed in comparison with the peaks from the 37 C wave, and the later peaks were more delayed than the earlier peaks. These results indicate that an increase in the interpeak latency occurs as the brain temperature is decreased. Preliminary experiments, in which responses to brief angular acceleration were used to measure the brainstem vestibular evoked response (BVER), have also indicated increases in the interpeak latency in response to the lowering of brain temperature.

Development of a 1 kW, 200 C Mapham Inventor

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad; Gerber, Scott; Bauman, Eric; Overton, Eric; Myers, Ira; Bercaw, Robert

1995-01-01

Electronic systems and components are often exposed to high temperature environment in space-based applications, nuclear power facilities, and geothermal energy extraction fields. A key requirement for these systems is, therefore, to withstand the high temperature exposure while maintaining efficient and reliable operation. Efforts were taken to design and develop a high temperature power inverter capable of 200 C operation. A 1 kW, 20 kHz Mapham inverter was designed and evaluated as a function of temperature at different load levels. The inverter system, excluding its input, control, and logic circuits, was characterized at temperatures from ambient to 200 C at 0%, 50%, and 100% resistive loading. With an applied input voltage of 75 VDC, the inverter produced an output of 250 VAC. The results obtained, which indicate good operational characteristics of the inverter up to 200 C, are presented and discussed.

A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors

NASA Astrophysics Data System (ADS)

Djezzar, Boualem; Tahi, Hakim; Benabdelmoumene, Abdelmadjid; Chenouf, Amel; Kribes, Youcef

2012-11-01

In this paper, we present a new method, named on the fly oxide trap (OTFOT), to extract the bias temperature instability (BTI) in MOS transistors. The OTFOT method is based on charge pumping technique (CP) at low and high frequencies. We emphasize on the theoretical-based concept, giving a clear insight on the easy-use of the OTFOT methodology and demonstrating its viability to characterize the negative BTI (NBTI). Using alternatively high and low frequencies, OTFOT method separates the interface-traps (ΔNit) and border-trap (ΔNbt) (switching oxide-trap) densities independently and also their contributions to the threshold voltage shift (ΔVth), without needing additional methods. The experimental results, from two experimental scenarios, showing the extraction of NBTI-induced shifts caused by interface- and oxide-trap increases are also presented. In the first scenario, all stresses are performed on the same transistor. It exhibits an artifact value of exponent n. In the second scenario, each voltage stress is applied only on one transistor. Its results show an average n of 0.16, 0.05, and 0.11 for NBTI-induced ΔNit, ΔNbt, ΔVth, respectively. Therefore, OTFOT method can contribute to further understand the behavior of the NBTI degradation, especially through the threshold voltage shift components such as ΔVit and ΔVot caused by interface-trap and border-trap, respectively.

Synthesis and Electrical Resistivity of Nickel Polymethacrylate

NASA Astrophysics Data System (ADS)

Chohan, M. H.; Khalid, A. H.; Zulfiqar, M.; Butt, P. K.; Khan, Farah; Hussain, Rizwan

Synthesis of nickel polymethacrylate was carried out using methanolic solutions of sodium hydroxide and polymethacrylic acid. The electrical resistivity of the pellets made from Ni-polymethacrylate was measured at different voltages and temperatures. Results showed that the electrical resistivity of Ni-polymethacrylate decreases significantly with voltage in high temperature regions but the decrease is insignificant at temperatures nearing room temperature. The activation energy at low temperatures is approximately 0.8 eV whereas at high temperature it is in the range 0.21-0.27 eV.

Graphene bolometer with thermoelectric readout and capacitive coupling to an antenna

NASA Astrophysics Data System (ADS)

Skoblin, Grigory; Sun, Jie; Yurgens, August

2018-02-01

We report on a prototype graphene radiation detector based on the thermoelectric effect. We used a split top gate to create a p-n junction in the graphene, thereby making an effective thermocouple to read out the electronic temperature in the graphene. The electronic temperature is increased due to the AC currents induced in the graphene from the incoming radiation, which is first received by an antenna and then directed to the graphene via the top-gate capacitance. With the exception of the constant DC voltages applied to the gate, the detector does not need any bias and is therefore very simple to use. The measurements showed a clear response to microwaves at 94 GHz with the signal being almost temperature independent in the 4-100 K temperature range. The optical responsivity reached ˜700 V/W.

The Electrolytic Effect on the Catalytic Degradation of Dye and Nitrate Ion by New Ceramic Beads of Natural Minerals and TiO2

NASA Astrophysics Data System (ADS)

Sata, Akiyoshi; Sakai, Takako; Goto, Yusuke; Ohta, Toshiyuki; Hayakawa, Katumitu

2007-05-01

We have developed a new hybrid ceramic material "Taiyo" as a water processing catalyst. The porous ceramic has a core-shell structure. It decolorized completely the dye solutions as well as the wastewater output after primary water processing by microorganism in a pig farm. This new material showed the acceleration of water purification by applying electric voltage. The degradation of dyes and pig urine output from the primary treatments was accelerated by applying voltage. Nitrate in underground water was also decomposed only by applying voltage, while it was not decomposed without voltage.

Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai

2013-05-13

Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

Method to improve reliability of a fuel cell system using low performance cell detection at low power operation

DOEpatents

Choi, Tayoung; Ganapathy, Sriram; Jung, Jaehak; Savage, David R.; Lakshmanan, Balasubramanian; Vecasey, Pamela M.

2013-04-16

A system and method for detecting a low performing cell in a fuel cell stack using measured cell voltages. The method includes determining that the fuel cell stack is running, the stack coolant temperature is above a certain temperature and the stack current density is within a relatively low power range. The method further includes calculating the average cell voltage, and determining whether the difference between the average cell voltage and the minimum cell voltage is greater than a predetermined threshold. If the difference between the average cell voltage and the minimum cell voltage is greater than the predetermined threshold and the minimum cell voltage is less than another predetermined threshold, then the method increments a low performing cell timer. A ratio of the low performing cell timer and a system run timer is calculated to identify a low performing cell.

Improvement in performance and reliability with CF4 plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistor

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yi-Yan; Yang, Chun-Chieh

2012-03-01

This study applies CF4 plasma pretreatment to a buffer oxide layer to improve the performance of low-temperature polysilicon thin-film transistors (LTPS TFTs). Results show that the fluorine atoms piled up at the interface between the bulk channel and buffer oxide layer and accumulated in the bulk channel. The reduction of the trap states density by fluorine passivation can improve the electrical characteristics of the LTPS TFTs. It is found that the threshold voltage reduced from 4.32 to 3.03 V and the field-effect mobility increased from 29.71 to 45.65 cm2 V-1 S-1. In addition, the on current degradation and threshold voltage shift after stressing were significantly improved about 31% and 70%, respectively. We believe that the proposed CF4 plasma pretreatment on the buffer oxide layer can passivate the trap states and avoid the plasma induced damage on the polysilicon channel surface, resulting in the improvement in performance and reliability for LTPS-TFT mass production application on AMOLED displays with critical reliability requirement.

Model parameter estimation approach based on incremental analysis for lithium-ion batteries without using open circuit voltage

NASA Astrophysics Data System (ADS)

Wu, Hongjie; Yuan, Shifei; Zhang, Xi; Yin, Chengliang; Ma, Xuerui

2015-08-01

To improve the suitability of lithium-ion battery model under varying scenarios, such as fluctuating temperature and SoC variation, dynamic model with parameters updated realtime should be developed. In this paper, an incremental analysis-based auto regressive exogenous (I-ARX) modeling method is proposed to eliminate the modeling error caused by the OCV effect and improve the accuracy of parameter estimation. Then, its numerical stability, modeling error, and parametric sensitivity are analyzed at different sampling rates (0.02, 0.1, 0.5 and 1 s). To identify the model parameters recursively, a bias-correction recursive least squares (CRLS) algorithm is applied. Finally, the pseudo random binary sequence (PRBS) and urban dynamic driving sequences (UDDSs) profiles are performed to verify the realtime performance and robustness of the newly proposed model and algorithm. Different sampling rates (1 Hz and 10 Hz) and multiple temperature points (5, 25, and 45 °C) are covered in our experiments. The experimental and simulation results indicate that the proposed I-ARX model can present high accuracy and suitability for parameter identification without using open circuit voltage.

Contribution of the backstreaming ions to the Self-Magnetic pinch (SMP) diode current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mazarakis, Michael G.; Cuneo, Michael E.; Fournier, Sean D.

2016-08-08

Summary form only given. The results presented here were obtained with an SMP diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulses of six 1.3 MV inductively insulated cavities. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target to the diode beam current, and second to try to evaluate the energy of those ions and hence the actual Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage addermore » (IVA) utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the anode-cathode (A-K) gap is problematic. The accelerating voltage quoted in the literature is from estimates based on measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high Z metals in order to produce copious and energetic flash x-rays. The backstreaming currents are a strong fraction of the anode materials and their stage of cleanness and gas adsorption. We have measured the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatments, such as heating to very high temperatures with DC and pulsed current, with RF plasma cleaning and with both plasma cleaning and heating. Finally, we have also evaluated the A-K gap voltage by ion filtering techniques.« less

Ion manipulation device to prevent loss of ions

DOEpatents

Tolmachev, Aleksey; Smith, Richard D; Ibrahim, Yehia M; Anderson, Gordon A; Baker, Erin M

2015-03-03

An ion manipulation method and device to prevent loss of ions is disclosed. The device includes a pair of surfaces. An inner array of electrodes is coupled to the surfaces. A RF voltage and a DC voltage are alternately applied to the inner array of electrodes. The applied RF voltage is alternately positive and negative so that immediately adjacent or nearest neighbor RF applied electrodes are supplied with RF signals that are approximately 180 degrees out of phase.

Generation of a pulsed low-energy electron beam using the channel spark device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elgarhy, M. A. I., E-mail: elgarhy@azhar.edu.eg; Hassaballa, S. E.; Rashed, U. M.

2015-12-15

For the generation of low-energy electron beam, the design and characteristics of channel spark discharge (CSD) operating at a low voltage are presented in this paper. The discharge voltage, discharge current, X-ray emissions, and electron beam current were experimentally determined. The effects of the applied voltage, working gas pressure, and external capacitance on the CSD and beam parameters were measured. At an applied voltage of 11 kV, an oxygen gas pressure of 25 mTorr, and an external capacitance of 16.45 nF, the maximum measured current was 900 A. The discharge current increased with the increase in the pressure and capacitance,more » while its periodic time decreased with the increase in the pressure. Two types of the discharge were identified and recorded: the hollow cathode discharge and the conduction discharge. A Faraday cup was used to measure the beam current. The maximum measured beam current was 120 A, and the beam signal exhibited two peaks. The increase in both the external capacitance and the applied discharge voltage increased the maximum electron beam current. The electron-beam pulse time decreased with the increase in the gas pressure at a constant voltage and increased with the decrease in the applied discharge voltage. At an applied voltage of 11 kV and an oxygen gas pressure of 15 mTorr, the maximum beam energy was 2.8 keV. The X-ray signal intensity decreased with the increase in the gas pressure and increased with the increase in the capacitance.« less

Synthesis and properties of hydroxyapatite-containing coating on AZ31 magnesium alloy by micro-arc oxidation

NASA Astrophysics Data System (ADS)

Tang, Hui; Han, Yu; Wu, Tao; Tao, Wei; Jian, Xian; Wu, Yunfeng; Xu, Fangjun

2017-04-01

In this study, hydroxyapatite-containing coatings were prepared by microarc oxidation on AZ31 magnesium alloy surface to improve its biodegradation performance. Five applied voltages were chosen to prepare the MAO coatings. The results demonstrate that the number of micropores in the films increases but their dimensions decrease after higher voltage is applied. As the surface roughness of the MAO coatings increases with the applied voltage, the wettability of the coatings improves continuously. The MAO coatings were mainly composed of magnesium oxide (MgO) and hydroxyapatite. The amount of hydroxyapatite phase increased with increasing voltage that was applied. The bonding strength became slightly weaker after a higher voltage was applied. But the bonding strengths of all the coatings were consistently higher than 37 MPa, which met the requirement of implant biomaterials. All coatings exhibited higher corrosion resistances and lower hydrogen evolution rate than the bare AZ31 Mg substrate, implying that the degradation rate of the AZ31 Mg alloy was enhanced by the hydroxyapatite-containing coatings. The results indicate that the present treatment of applying hydroxyapatite-containing coatings is a promising technique for the degradable Mg-based biomaterials for orthopedic applications.

Josephson junctions of multiple superconducting wires

NASA Astrophysics Data System (ADS)

Deb, Oindrila; Sengupta, K.; Sen, Diptiman

2018-05-01

We study the spectrum of Andreev bound states and Josephson currents across a junction of N superconducting wires which may have s - or p -wave pairing symmetries and develop a scattering matrix based formalism which allows us to address transport across such junctions. For N ≥3 , it is well known that Berry curvature terms contribute to the Josephson currents; we chart out situations where such terms can have relatively large effects. For a system of three s -wave or three p -wave superconductors, we provide analytic expressions for the Andreev bound-state energies and study the Josephson currents in response to a constant voltage applied across one of the wires; we find that the integrated transconductance at zero temperature is quantized to integer multiples of 4 e2/h , where e is the electron charge and h =2 π ℏ is Planck's constant. For a sinusoidal current with frequency ω applied across one of the wires in the junction, we find that Shapiro plateaus appear in the time-averaged voltage across that wire for any rational fractional multiple (in contrast to only integer multiples in junctions of two wires) of 2 e /(ℏ ω ) . We also use our formalism to study junctions of two p -wave and one s -wave wires. We find that the corresponding Andreev bound-state energies depend on the spin of the Bogoliubov quasiparticles; this produces a net magnetic moment in such junctions. The time variation of these magnetic moments may be controlled by an external voltage applied across the junction. We discuss experiments which may test our theory.

Fabricating continuous electroconductive polyacrylonitrile fibers with thermosensitive property via wet-spinning

NASA Astrophysics Data System (ADS)

Liu, Wanwan; Jin, Yang; Wang, Yangyi; Ge, Mingqiao; Gao, Qiang

2017-12-01

In this work, conductive polyacrylonitrile (PAN) composite fiber with thermosensitive property was successfully prepared via wet-spinning. Thermochromic pigment (TCP) microsphere capsules were applied to manufacture color-changing fibers. Meanwhile, light-colored conductive whiskers (ATO@TiO2) were employed to endow polyacrylonitrile fibers with conductivity without prejudicing their thermosensitive property. Interestingly, unlike other conductive fibers in dark color, this kind of conductive composite fiber can be dyed by thermosensitive pigment. The obtained composite fiber containing 20 vol% ATO@TiO2 whiskers shows a resistivity of 105 Ω · cm and could generate heat by Joule heating when being applied under a certain voltage. The composite fiber shows a red color at room temperature, while the color of the composite fiber fades gradually and finally becomes white as temperature rise. This simple and cost-effective approach is expected to inspire more research into the applications of multifunctional conductive fibers.

In Situ Probing of Ion Ordering at an Electrified Ionic Liquid/Au Interface

DOE PAGES

Sitaputra, Wattaka; Stacchiola, Dario; Wishart, James F.; ...

2017-05-12

Charge transport at the interface of electrodes and ionic liquids is critical for the use of the latter as electrolytes. In this study, a room-temperature ionic liquid, 1-ethyl-2,3-dimethylimidazolium bis(trifluoromethanesulfonyl)imide (EMMIM TFSI), is investigated in situ under applied bias voltage with a novel method using low-energy electron and photoemission electron microscopy. Changes in photoelectron yield as a function of bias applied to electrodes provide a direct measure of the dynamics of ion reconfiguration and electrostatic responses of the EMMIM TFSI. Finally, long-range and correlated ionic reconfigurations that occur near the electrodes are found to be a function of temperature and thickness,more » which, in turn, relate to ionic mobility and different configurations for out-of-plane ordering near the electrode interfaces, with a critical transition in ion mobility for films thicker than three monolayers.« less

ELECTRONIC MULTIPLIER CIRCUIT

DOEpatents

Thomas, R.E.

1959-08-25

An electronic multiplier circuit is described in which an output voltage having an amplitude proportional to the product or quotient of the input signals is accomplished in a novel manner which facilitates simplicity of circuit construction and a high degree of accuracy in accomplishing the multiplying and dividing function. The circuit broadly comprises a multiplier tube in which the plate current is proportional to the voltage applied to a first control grid multiplied by the difference between voltage applied to a second control grid and the voltage applied to the first control grid. Means are provided to apply a first signal to be multiplied to the first control grid together with means for applying the sum of the first signal to be multiplied and a second signal to be multiplied to the second control grid whereby the plate current of the multiplier tube is proportional to the product of the first and second signals to be multiplied.

Effect of a longitudinally applied voltage upon the growth of Zea mays seedlings

NASA Technical Reports Server (NTRS)

Desrosiers, M. F.; Bandurski, R. S.

1988-01-01

The electrical parameters that affect young seedling growth were investigated. Voltages ranging from 5 to 40 volts were applied longitudinally along the mesocotyl region of 4-day old Zea mays L. (cv Silver Queen) seedlings for periods of 3 or 4 hours. It was determined that: (a) making the tips of the seedlings electrically positive relative to the base strongly inhibited shoot growth at 5 volts, whereas the reverse polarity had no effect; (b) at higher voltages, making the tip of the seedlings negative caused less growth inhibition than the reverse polarity at each voltage level; (c) the higher the applied voltage the greater the degree of inhibition; and, (d) the more growth inhibition experienced by the plants the poorer, and slower, their recovery. Previous observations of a relationship between the amount of free indole-3-acetic acid in the mesocotyl cortex and the growth rate of the mesocotyl and of gravitropism-induced movement of labeled indole-3-acetic acid from the seed to the shoot lead to the prediction of a voltage-dependent gating of the movement of indole-3-acetic acid from the stele to the cortex. This provided the basis for attempting to alter the growth rate of seedlings by means of an applied voltage.

Effect of a longitudinally applied voltage upon the growth of Zea mays seedlings.

PubMed

Desrosiers, M F; Bandurski, R S

1988-01-01

The electrical parameters that affect young seedling growth were investigated. Voltages ranging from 5 to 40 volts were applied longitudinally along the mesocotyl region of 4-day old Zea mays L. (cv Silver Queen) seedlings for periods of 3 or 4 hours. It was determined that: (a) making the tips of the seedlings electrically positive relative to the base strongly inhibited shoot growth at 5 volts, whereas the reverse polarity had no effect; (b) at higher voltages, making the tip of the seedlings negative caused less growth inhibition than the reverse polarity at each voltage level; (c) the higher the applied voltage the greater the degree of inhibition; and, (d) the more growth inhibition experienced by the plants the poorer, and slower, their recovery. Previous observations of a relationship between the amount of free indole-3-acetic acid in the mesocotyl cortex and the growth rate of the mesocotyl and of gravitropism-induced movement of labeled indole-3-acetic acid from the seed to the shoot lead to the prediction of a voltage-dependent gating of the movement of indole-3-acetic acid from the stele to the cortex. This provided the basis for attempting to alter the growth rate of seedlings by means of an applied voltage.

Effect of a Longitudinally Applied Voltage Upon the Growth of Zea mays Seedlings 1

PubMed Central

Desrosiers, Mark F.; Bandurski, Robert S.

1988-01-01

The electrical parameters that affect young seedling growth were investigated. Voltages ranging from 5 to 40 volts were applied longitudinally along the mesocotyl region of 4-day old Zea mays L. (cv Silver Queen) seedlings for periods of 3 or 4 hours. It was determined that: (a) making the tips of the seedlings electrically positive relative to the base strongly inhibited shoot growth at 5 volts, whereas the reverse polarity had no effect; (b) at higher voltages, making the tip of the seedlings negative caused less growth inhibition than the reverse polarity at each voltage level; (c) the higher the applied voltage the greater the degree of inhibition; and, (d) the more growth inhibition experienced by the plants the poorer, and slower, their recovery. Previous observations of a relationship between the amount of free indole-3-acetic acid in the mesocotyl cortex and the growth rate of the mesocotyl and of gravitropism-induced movement of labeled indole-3-acetic acid from the seed to the shoot lead to the prediction of a voltage-dependent gating of the movement of indole-3-acetic acid from the stele to the cortex. This provided the basis for attempting to alter the growth rate of seedlings by means of an applied voltage. Images Fig. 1 PMID:11537877

Experimental investigations of an AC pulse heating method for vehicular high power lithium-ion batteries at subzero temperatures

NASA Astrophysics Data System (ADS)

Zhu, Jiangong; Sun, Zechang; Wei, Xuezhe; Dai, Haifeng; Gu, Weijun

2017-11-01

Effect of the AC (alternating current) pulse heating method on battery SoH (state of health) for large laminated power lithium-ion batteries at low temperature is investigated experimentally. Firstly, excitation current frequencies, amplitudes, and voltage limitations on cell temperature evolution are studied. High current amplitudes facilitate the heat accumulation and temperature rise. Low frequency region serves as a good innovation to heat the battery because of the large impedance. Wide voltage limitations also enjoy better temperature evolution owing to the less current modulation, but the temperature difference originated from various voltage limitations attenuates due to the decrement of impedance resulting from the temperature rise. Experiments with the thermocouple-embedded cell manifest good temperature homogeneity between the battery surface and interior during the AC heating process. Secondly, the cell capacity, Direct Current resistance and Electrochemical Impedance Spectroscopy are all calibrated to assess the battery SoH after the hundreds of AC pulse heating cycles. Also, all cells are disassembled to investigate the battery internal morphology with the employment of Scanning Electron Microscope and Energy-Dispersive x-ray Spectroscopy techniques. The results indicate that the AC heating method does not aggravate the cell degradation even in the low frequency range (0.5 Hz) under the normal voltage protection limitation.

Effect of voltage waveform on dielectric barrier discharge ozone production efficiency

NASA Astrophysics Data System (ADS)

Mericam-Bourdet, N.; Kirkpatrick, M. J.; Tuvache, F.; Frochot, D.; Odic, E.

2012-03-01

Dielectric barrier discharges (DBDs) are commonly used for gas effluent cleanup and ozone generation. For these applications, the energy efficiency of the discharge is a major concern. This paper reports on investigations carried out on the voltage shape applied to DBD reactor electrodes, aiming to evaluate a possible energy efficiency improvement for ozone production. Two DBD reactor geometries were used: pin-to-pin and cylinder-to-cylinder, both driven either by a bi-directional power supply (voltage rise rate 1 kV/μs) or by a pulsed power supply (voltage rise rate 1 kV/ns). Ozone formed in dry air was measured at the reactor outlet. Special attention was paid to discharge input power evaluation using different methods including instantaneous current-voltage product and transferred charge-applied voltage figures. The charge transferred by the discharges was also correlated to the ozone production. It is shown that, in the case of the DBD reactors under investigation, the applied voltage shape has no influence on the ozone production efficiency. For the considered voltage rise rate, the charge deposit on the dielectric inserted inside the discharge gap is the important factor (as opposed to the voltage shape) governing the efficiency of the discharge - it does this by tailoring the duration of the current peak into the tens of nanosecond range.

Design techniques for a stable operation of cryogenic field-programmable gate arrays.

PubMed

Homulle, Harald; Visser, Stefan; Patra, Bishnu; Charbon, Edoardo

2018-01-01

In this paper, we show how a deep-submicron field-programmable gate array (FPGA) can be operated more stably at extremely low temperatures through special firmware design techniques. Stability at low temperatures is limited through long power supply wires and reduced performance of various printed circuit board components commonly employed at room temperature. Extensive characterization of these components shows that the majority of decoupling capacitor types and voltage regulators are not well behaved at cryogenic temperatures, asking for an ad hoc solution to stabilize the FPGA supply voltage, especially for sensitive applications. Therefore, we have designed a firmware that enforces a constant power consumption, so as to stabilize the supply voltage in the interior of the FPGA. The FPGA is powered with a supply at several meters distance, causing significant resistive voltage drop and thus fluctuations on the local supply voltage. To achieve the stabilization, the variation in digital logic speed, which directly corresponds to changes in supply voltage, is constantly measured and corrected for through a tunable oscillator farm, implemented on the FPGA. The impact of the stabilization technique is demonstrated together with a reconfigurable analog-to-digital converter (ADC), completely implemented in the FPGA fabric and operating at 15 K. The ADC performance can be improved by at most 1.5 bits (effective number of bits) thanks to the more stable supply voltage. The method is versatile and robust, enabling seamless porting to other FPGA families and configurations.

Design techniques for a stable operation of cryogenic field-programmable gate arrays

NASA Astrophysics Data System (ADS)

Homulle, Harald; Visser, Stefan; Patra, Bishnu; Charbon, Edoardo

2018-01-01

In this paper, we show how a deep-submicron field-programmable gate array (FPGA) can be operated more stably at extremely low temperatures through special firmware design techniques. Stability at low temperatures is limited through long power supply wires and reduced performance of various printed circuit board components commonly employed at room temperature. Extensive characterization of these components shows that the majority of decoupling capacitor types and voltage regulators are not well behaved at cryogenic temperatures, asking for an ad hoc solution to stabilize the FPGA supply voltage, especially for sensitive applications. Therefore, we have designed a firmware that enforces a constant power consumption, so as to stabilize the supply voltage in the interior of the FPGA. The FPGA is powered with a supply at several meters distance, causing significant resistive voltage drop and thus fluctuations on the local supply voltage. To achieve the stabilization, the variation in digital logic speed, which directly corresponds to changes in supply voltage, is constantly measured and corrected for through a tunable oscillator farm, implemented on the FPGA. The impact of the stabilization technique is demonstrated together with a reconfigurable analog-to-digital converter (ADC), completely implemented in the FPGA fabric and operating at 15 K. The ADC performance can be improved by at most 1.5 bits (effective number of bits) thanks to the more stable supply voltage. The method is versatile and robust, enabling seamless porting to other FPGA families and configurations.

Electrophoretic deposition of multi-walled carbon nanotubes on porous anodic aluminum oxide using ionic liquid as a dispersing agent

NASA Astrophysics Data System (ADS)

Hekmat, F.; Sohrabi, B.; Rahmanifar, M. S.; Jalali, A.

2015-06-01

Multi-wall carbon nanotubes (MW-CNTs) have been arranged in nanochannels of anodic aluminum oxide template (AAO) by electrophoretic deposition (EPD) to make a vertically-aligned carbon nanotube (VA-CNT) based electrode. Well ordered AAO templates were prepared by a two-step anodizing process by applying a constant voltage of 45 V in oxalic acid solution. The stabilized CNTs in a water-soluble room temperature ionic liquid (1-methyl-3-octadecylimidazolium bromide), were deposited in the pores of AAO templates which were conductive by deposition of Ni nanoparticles in the bottom of pores. In order to obtain ideal results, different EPD parameters, such as concentration of MWCNTs and ionic liquid on stability of MWCNT suspensions, deposition time and voltage which are applied in EPD process and also optimal conditions for anodizing of template were investigated. The capacitive performance of prepared electrodes was analyzed by measuring the specific capacitance from cyclic voltammograms and the charge-discharge curves. A maximum value of 50 Fg-1 at the scan rate of 20 mV s-1was achieved for the specific capacitance.

The electrical characteristics of the dielectric barrier discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yehia, Ashraf, E-mail: yehia30161@yahoo.com; Department of Physics, Faculty of Science, Assiut University, Assiut 71516

2016-06-15

The electrical characteristics of the dielectric barrier discharges have been studied in this paper under different operating conditions. The dielectric barrier discharges were formed inside two reactors composed of electrodes in the shape of two parallel plates. The dielectric layers inside these reactors were pasted on the surface of one electrode only in the first reactor and on the surfaces of the two electrodes in the second reactor. The reactor under study has been fed by atmospheric air that flowed inside it with a constant rate at the normal temperature and pressure, in parallel with applying a sinusoidal ac voltagemore » between the electrodes of the reactor. The amount of the electric charge that flows from the reactors to the external circuit has been studied experimentally versus the ac peak voltage applied to them. An analytical model has been obtained for calculating the electrical characteristics of the dielectric barrier discharges that were formed inside the reactors during a complete cycle of the ac voltage. The results that were calculated by using this model have agreed well with the experimental results under the different operating conditions.« less

Overcharge and overdischarge protection of ambient temperature secondary lithium cells

NASA Technical Reports Server (NTRS)

Huang, Chen-Kuo (Inventor); Surampudi, Subbarao (Inventor); Attia, Alan I. (Inventor); Halpert, Gerald (Inventor)

1994-01-01

A cathode additive is provided for protecting an ambient temperature secondary lithium cell from overcharging or overdischarging. The cathode additive is chosen to create an upper voltage plateau which is slightly higher than a characteristic charge cutoff voltage of the cathode of the cell. The cathode additive additionally creates a lower voltage plateau which is slightly lower than the characteristic discharge cutoff voltage of the cell. Preferably, the cathode additive is a transition metal oxide or a sulfide and may, for example, include a mixture of Li2Mn2O4 and Li(0.1)MoO2.

Performance of Li-Ion Cells Under Battery Voltage Charge Control

NASA Technical Reports Server (NTRS)

Rao, Gopalakrishna M.; Vaidyanathan, Hari; Day, John H. (Technical Monitor)

2001-01-01

A study consisting of electrochemical characterization and Low-Earth-Orbit (LEO) cycling of Li-Ion cells from three vendors was initiated in 1999 to determine the cycling performance and to infuse the new technology in the future NASA missions. The 8-cell batteries included in this evaluation are prismatic cells manufactured by Mine Safety Appliances Company (MSA), cylindrical cells manufactured by SAFT and prismatic cells manufactured by Yardney Technical Products, Inc. (YTP). The three batteries were cycle tested in the LEO regime at 40% depth of discharge, and under a charge control technique that consists of battery voltage clamp with a current taper. The initial testing was conducted at 20 C; however, the batteries were cycled also intermittently at low temperatures. YTP 20 Ah cells consisted of mixed-oxide (Co and Ni) positive, graphitic carbon negative, LIPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 32 V. The low temperature cycling tests started after 4575 cycles at 20 C. The cells were not capable of cycling. at low temperature since the charge acceptance at battery level was poor. There was a cell in the battery that showed too high an end-of-charge (EOC) voltage thereby limiting the ability to charge the rest of the cells in the battery. The battery has completed 6714 cycles. SAFT 12 Ah cells consisted of mixed-oxide (Co and NO positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was for 30.8 V. The low temperature cycling tests started after 4594 cycles at 20 C. A cell that showed low end of discharge (EOD) and EOC voltages and three other cells that showed higher EOC voltages limited the charge acceptance at the selected voltage limit during charge. The cells were capable of cycling at 10 C and 0 C but the charge voltage limit had to be increased to 34.3 V (4.3 V per cell). The low temperature cycling may have induced poor chargeability since the voltage had to be increased to achieve the required charge input. The battery has completed 6226 cycles. MSA 10 Ah cells consisted of Co oxide positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 30.8 V. The low temperature cycling tests were started after 2182 cycles at 20 C. The cells were capable of cycling at 10 C and 0 C. Like SAFT, the voltage limit on charge had to be increased to 36 V (4.5 V per cell). There was a cell (cell S/N 13) in the battery that showed poor performance features such as low EOD voltage and high EOC voltage. The battery has completed 3441 cycles. A reconditioning procedure that consisted of C15 charge to a taper current of C/100 and C/20 discharge improved the voltage behavior of SAFT and MSA cells with no significant effect on YTP cells. We have demonstrated that the charge operation with VT clamp at battery rather than at cell level is feasible for onboard Li-Ion battery operation.

Fabrication of a novel aluminum surface covered by numerous high-aspect-ratio anodic alumina nanofibers

NASA Astrophysics Data System (ADS)

Nakajima, Daiki; Kikuchi, Tatsuya; Natsui, Shungo; Sakaguchi, Norihito; Suzuki, Ryosuke O.

2015-11-01

The formation behavior of anodic alumina nanofibers via anodizing in a concentrated pyrophosphoric acid under various conditions was investigated using electrochemical measurements and SEM/TEM observations. Pyrophosphoric acid anodizing at 293 K resulted in the formation of numerous anodic alumina nanofibers on an aluminum substrate through a thin barrier oxide and honeycomb oxide with narrow walls. However, long-term anodizing led to the chemical dissolution of the alumina nanofibers. The density of the anodic alumina nanofibers decreased as the applied voltage increased in the 10-75 V range. However, active electrochemical dissolution of the aluminum substrate occurred at a higher voltage of 90 V. Low temperature anodizing at 273 K resulted in the formation of long alumina nanofibers measuring several micrometers in length, even though a long processing time was required due to the low current density during the low temperature anodizing. In contrast, high temperature anodizing easily resulted in the formation and chemical dissolution of alumina nanofibers. The structural nanofeatures of the anodic alumina nanofibers were controlled by choosing of the appropriate electrochemical conditions, and numerous high-aspect-ratio alumina nanofibers (>100) can be successfully fabricated. The anodic alumina nanofibers consisted of a pure amorphous aluminum oxide without anions from the employed electrolyte.

Temperature-controlled transparent-film heater based on silver nanowire-PMMA composite film

NASA Astrophysics Data System (ADS)

He, Xin; Liu, A.'lei; Hu, Xuyang; Song, Mingxia; Duan, Feng; Lan, Qiuming; Xiao, Jundong; Liu, Junyan; Zhang, Mei; Chen, Yeqing; Zeng, Qingguang

2016-11-01

We fabricated a high-performance film heater based on a silver nanowire and polymethyl methacrylate (Ag NW-PMMA) composite film, which was synthesized with the assistance of mechanical lamination and an in situ transfer method. The films exhibit excellent conductivity, high figure of merit, and strong adhesion of percolation network to substrate. By controlling NW density, we prepared the films with a transmittance of 44.9-85.0% at 550 nm and a sheet resistance of 0.13-1.40 Ω sq-1. A stable temperature ranging from 130 °C-40 °C was generated at 3.0 V within 10-30 s, indicating that the resulting film heaters show a rapid thermal response, low driving voltage and stable temperature recoverability. Furthermore, we demonstrated the applications of the film heater in defrosting and a physical therapeutic instrument. A fast defrosting on the composite film with a transmittance of 88% was observed by applying a 9 V driving voltage for 20 s. Meanwhile, we developed a physical therapeutic instrument with two modes of thermotherapy and electronic-pulse massage by using the composite films as two electrodes, greatly decreasing the weight and power consumption compared to a traditional instrument. Therefore, Ag NW-PMMA film can be a promising candidate for diversified heating applications.

Experimental study of low-temperature plasma of electrical discharges with liquid electrodes

NASA Astrophysics Data System (ADS)

Zheltukhin, Viktor; Gaisin, Almaz

2016-09-01

Results of the experimental research of discharge between the liquid jet cathode (LJC) and the metal anode are presented. The discharge was studied over the voltage range U = 100 - 600 V, discharge current range I = 0 . 1 - 0 . 25 A, external pressure range P =105 Pa, discharge power Pd = 10 - 150 W. We used the techniques of infrared thermography and spectral measurements. Schlieren's photography is applied for describing the processes in liquid and gas phase. Results of the experimental researches of discharge current-voltage characteristic (CVC), the surface temperature distribution both on the LJC and the metal anode, a spectral measurements are showed. Effects of action both of breakdown and discharge on the jet flow as well as on the air flow near the discharge are described. It is found that the discharge CVC has an ascending behavior due to increase of plasma current density. The discharge is generated on the borders between the LJC and the metal anode as well as along the LJC misshaping this one. It is established that both the convection streams and an electrolyte drops are formed during the discharge burn. It is found that the discharge temperature in the vicinity of electrode surface reaches T 348 K. The work was funded by RFBR, according to the research projects No.,14-01-0755.

Poole-Frenkel effect in sputter-deposited CuAlO2+x nanocrystals

NASA Astrophysics Data System (ADS)

Narayan Banerjee, Arghya; Joo, Sang Woo

2013-04-01

Field-assisted thermionic emission within a sputter-deposited, nanocrystalline thin film of CuAlO2.06 is observed for the first time, and explained in terms of the Poole-Frenkel model. The presence of adsorbed oxygen ions as trap-states at the grain boundary regions of the nanostructured thin film is considered to manifest this phenomenon. Under an applied field, the barrier of the trap potential is lowered and thermal emission of charge carriers takes place at different sample temperatures to induce nonlinearity in the current (I)-voltage (V) characteristics of the nanomaterial. Fitting of the Poole-Frenkel model with the I-V data shows that the nonlinearity is effective above 50 V under the operating conditions. Calculations of the energy of the trap level, acceptor level and Fermi level reveal the existence of deep level trap-states and a shallow acceptor level with acceptor concentration considerably higher than the trap-states. Hall measurements confirm the p-type semiconductivity of the film, with a hole concentration around 1018 cm-3. Thermopower measurements give a room-temperature Seebeck coefficient around 130 μV K-1. This temperature-dependent conductivity enhancement within CuAlO2 nanomaterial may find interesting applications in transparent electronics and high-voltage applications for power supply networks.

Poole-Frenkel effect in sputter-deposited CuAlO(2+x) nanocrystals.

PubMed

Banerjee, Arghya Narayan; Joo, Sang Woo

2013-04-26

Field-assisted thermionic emission within a sputter-deposited, nanocrystalline thin film of CuAlO2.06 is observed for the first time, and explained in terms of the Poole-Frenkel model. The presence of adsorbed oxygen ions as trap-states at the grain boundary regions of the nanostructured thin film is considered to manifest this phenomenon. Under an applied field, the barrier of the trap potential is lowered and thermal emission of charge carriers takes place at different sample temperatures to induce nonlinearity in the current (I)-voltage (V) characteristics of the nanomaterial. Fitting of the Poole-Frenkel model with the I-V data shows that the nonlinearity is effective above 50 V under the operating conditions. Calculations of the energy of the trap level, acceptor level and Fermi level reveal the existence of deep level trap-states and a shallow acceptor level with acceptor concentration considerably higher than the trap-states. Hall measurements confirm the p-type semiconductivity of the film, with a hole concentration around 10(18) cm(-3). Thermopower measurements give a room-temperature Seebeck coefficient around 130 μV K(-1). This temperature-dependent conductivity enhancement within CuAlO2 nanomaterial may find interesting applications in transparent electronics and high-voltage applications for power supply networks.

Low-voltage tunable color in full visible region using ferroelectric liquid-crystal-doped cholesteric liquid-crystal smart materials

NASA Astrophysics Data System (ADS)

Lin, Jia-De; Lin, Jyun-Wei; Lee, Chia-Rong

2018-02-01

Electrical tuning of photonic bandgap (PBG) of cholesteric liquid crystal (CLC) without deformation within the entire visible region at low voltages is not easy to achieve. This study demonstrates low-voltage-tunable PBG in full visible region with less deformation of the PBG based on smart materials of ferroelectric liquid crystal doped CLC (FLC-CLC) integrating with electrothermal film heaters. Experimental results show that the reflective color of the FLC-CLC can be low-voltage-tuned through entire visible region. The induced temperature change is induced by electrically heating the electrothermal film heaters at low voltages at near the smectic-CLC transition temperature. Coaxial electrospinning can be used to develop smart fibrous devices with FLC/CLC-core and polymer-shell which color is tunable in full visible region at low voltages.

Voltage tunability of thermal conductivity in ferroelectric materials

DOEpatents

Ihlefeld, Jon; Hopkins, Patrick Edward

2016-02-09

A method to control thermal energy transport uses mobile coherent interfaces in nanoscale ferroelectric films to scatter phonons. The thermal conductivity can be actively tuned, simply by applying an electrical potential across the ferroelectric material and thereby altering the density of these coherent boundaries to directly impact thermal transport at room temperature and above. The invention eliminates the necessity of using moving components or poor efficiency methods to control heat transfer, enabling a means of thermal energy control at the micro- and nano-scales.

1/f noise in metallic and semiconducting carbon nanotubes

NASA Astrophysics Data System (ADS)

Reza, Shahed; Huynh, Quyen T.; Bosman, Gijs; Sippel-Oakley, Jennifer; Rinzler, Andrew G.

2006-11-01

The charge transport and noise properties of three terminal, gated devices containing multiple single-wall metallic and semiconducting carbon nanotubes were measured at room temperature. Applying a high voltage pulsed bias at the drain terminal the metallic tubes were ablated sequentially, enabling the separation of measured conductance and 1/f noise into metallic and semiconducting nanotube contributions. The relative low frequency excess noise of the metallic tubes was observed to be two orders of magnitude lower than that of the semiconductor tubes.

Processing and Characterization of Thin Cadmium Telluride Solar Cells

NASA Astrophysics Data System (ADS)

Wojtowicz, Anna

Cadmium telluride (CdTe) has the highest theoretical limit to conversion efficiency of single-junction photovoltaic (PV) technologies today. However, despite a maximum theoretical open-circuit voltage of 1.20 V, record devices have historically had voltages pinned around only 900 mV. Voltage losses due to high recombination rates remains to be the most complex hurdle to CdTe technology today, and the subject of on-going research in the physics PV group at Colorado State University. In this work, an ultrathin CdTe device architecture is proposed in an effort to reduce bulk recombination and boost voltages. By thinning the CdTe layer, a device's internal electric field extends fully towards the back contact. This quickly separates electrons-hole pairs throughout the bulk of the device and reduces overall recombination. Despite this advantage, very thin CdTe layers also present a unique set of optical and electrical challenges which result in performance losses not as prevalent in thicker devices. When fabricating CdTe solar cells, post-deposition treatments applied to the absorber layer are a critical step for achieving high efficiency devices. Exposure of the polycrystalline CdTe film to a chlorine species encourages the passivation of dangling bonds and larger grain formation, while copper-doping improves device uniformity and voltages. This work focuses on experiments conducted via close-space sublimation to optimize CdCl2 and CuCl treatments for thin CdTe solar cells. Sweeps of both exposure and anneal time were performed for both post-deposition treatments on CdTe devices with 1.0 mum absorber layers. The results demonstrate that thin CdTe devices require substantially less post-deposition processing than standard thicker devices as expected. Additionally, the effects of CdTe growth temperature on thin devices is briefly investigated. The results suggest that higher growth temperatures lead to both electrical and stoichiometric changes in CdTe closely associated with lower carrier lifetimes and poorer overall performance.

The effect of voltage waveform and tube diameter on transporting cold plasma strings through a flexible dielectric tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sohbatzadeh, Farshad, E-mail: f.sohbat@umz.ac.ir; Nano and Biotechnology Research Group, Faculty of Basic Sciences, University of Mazandaran, Babolsar 47416-95447, Mazandaran; Omran, Azadeh Valinataj

2014-11-15

In this work, we developed transporting atmospheric pressure cold plasma using single electrode configuration through a sub-millimetre flexible dielectric tube beyond 100 cm. It was shown that the waveform of the applied high voltage is essential for controlling upstream and downstream plasma inside the tube. In this regard, sawtooth waveform enabled the transport of plasma with less applied high voltage compared to sinusoidal and pulsed form voltages. A cold plasma string as long as 130 cm was obtained by only 4 kV peak-to-peak sawtooth high voltage waveform. Optical emission spectroscopy revealed that reactive chemical species, such as atomic oxygen and hydroxyl, are generatedmore » at the tube exit. The effect of tube diameter on the transported plasma was also examined: the smaller the diameter, the higher the applied voltage. The device is likely to be used for sterilization, decontamination, and therapeutic endoscopy as already suggested by other groups in recent past years.« less

DLC Film Formation Technologies by Applying Pulse Voltage Coupled with RF Voltage to Complicated 3-dimensional Substrates and Industrial Application

NASA Astrophysics Data System (ADS)

Suzuki, Yasuo

A uniform plasma-based ion implantation and DLC film formation technologies on the surface of complicated 3-dimensional substrates have been developed by applying pulse voltage coupled with RF voltage to the substrates such as plastics, rubber as well as metals with the similar deposition rate. These technologies are widely applicable to both ion implantation and DLC film formation onto the automobile parts, mechanical parts and metal molds. A problem to be solved is reducing cost. The deposition rate of DLC films is expected to increase to around 10μm/hr, which is ten times larger than that of the conventional method, by hybridizing the ICP (Induction Coupling Plasma) with a plus-minus voltage source. This epoch-making technology will be able to substitute for the electro-plating method in the near future. In this paper, the DLC film formation technology by applying both RF and pulse voltage, its applications and its prospect are presented.

Forecasting of high voltage insulation performance: Testing of recommended potting materials and of capacitors

NASA Technical Reports Server (NTRS)

Bever, R. S.

1984-01-01

Nondestructive high voltage test techniques (mostly electrical methods) are studied to prevent total or catastrophic breakdown of insulation systems under applied high voltage in space. Emphasis is on the phenomenon of partial breakdown or partial discharge (P.D.) as a symptom of insulation quality, notably partial discharge testing under D.C. applied voltage. Many of the electronic parts and high voltage instruments in space experience D.C. applied stress in service, and application of A.C. voltage to any portion thereof would be prohibited. Suggestions include: investigation of the ramp test method for D.C. partial discharge measurements; testing of actual flight-type insulation specimen; perfect plotting resin samples with controlled defects for test; several types of plotting resins and recommendations of the better ones from the electrical characteristics; thermal and elastic properties are also considered; testing of commercial capaciters; and approximate acceptance/rejection/rerating criteria for sample test elements for space use, based on D.C. partial discharge.

Analysis of the coupled electron-ripplon oscillations resonance spectra in the Wigner solid at different temperatures and modeling of the excitation process

NASA Astrophysics Data System (ADS)

Syvokon, V. E.; Sharapova, I. V.

2018-05-01

The spectrum of coupled electron-ripplon oscillations in a Wigner crystal on the surface of superfluid helium at various temperatures and excitation voltages, leading to spectrum distortion, was studied experimentally. It was shown that at all temperatures, increasing excitation voltage leads to the appearance of non-axisymmetric vibrational modes, which indicates distortions of the crystal lattice. The possibility of excitation of the non-axisymmetric modes in a cell was demonstrated by modeling electronic crystal oscillations using the molecular dynamics method. At several fixed frequencies, the amplitudes of the response of the electronic crystal to external excitation were measured as a function of the magnitude of excitation voltage, and jumps were detected at certain critical voltages. Using the Lindemann criterion, a correlation was found between the critical stress and stability limit of the crystal lattice. It was concluded that when the critical voltage is reached, dynamic melting of the electronic crystal occurs.

A 2.87 ppm/°C 65 nm CMOS bandgap reference with nonlinearity compensation

NASA Astrophysics Data System (ADS)

Xingyuan, Tong; Zhangming, Zhu; Yintang, Yang

2011-09-01

Based on the review and analysis of two recently reported low temperature coefficient (TC) bandgap voltage references (BGRs), a new temperature compensation technique is presented. With the double-end piecewise nonlinearity correction method, the logarithm cancellation technique and the mixed-mode output topology, a BGR with high-temperature stability is realised based on 65 nm CMOS low-leakage process. The post-simulation results using Spectre show that this BGR produces an output voltage of about 953 mV with 2.5 V supply voltage, and the output voltage varies by only 0.16 mV from -40°C to 125°C. This low TC BGR has been used in a 65 nm CMOS touch screen controller, and the measurement shows that the output voltage of this BGR is about 949 mV varying by 0.44 mV from -40°C to 125°C. The TC of this BGR is about 2.87 ppm/°C, meeting the requirement of high-precision SoC application.

Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter.

PubMed

Gottardi, L; Adams, J; Bailey, C; Bandler, S; Bruijn, M; Chervenak, J; Eckart, M; Finkbeiner, F; den Hartog, R; Hoevers, H; Kelley, R; Kilbourne, C; de Korte, P; van der Kuur, J; Lindeman, M; Porter, F; Sadlier, J; Smith, S

At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in an AC bias configuration. For x-ray photons at 6 keV the pixel shows an x-ray energy resolution Δ E FWHM =3.7 eV, which is about a factor 2 worse than the energy resolution observed in an identical DC-biased pixel. In order to better understand the reasons for this discrepancy we characterised the detector as a function of temperature, bias working point and applied perpendicular magnetic field. A strong periodic dependency of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recently observed weak-link behaviour of a TES microcalorimeter.

Recent studies on nanosecond-timescale pressurized gas discharges

DOE PAGES

Yatom, S.; Shlapakovski, A.; Beilin, L.; ...

2016-10-05

The results of recent experimental and numerical studies of nanosecond high-voltage discharges in pressurized gases are reviewed. The discharges were ignited in a diode filled by different gases within a wide range of pressures by an applied pulsed voltage or by a laser pulse in the gas-filled charged resonant microwave cavity. Fast-framing imaging of light emission, optical emission spectroscopy, X-ray foil spectrometry and coherent anti-Stokes Raman scattering were used to study temporal and spatial evolution of the discharge plasma density and temperature, energy distribution function of runaway electrons and dynamics of the electric field in the plasma channel. The resultsmore » obtained allow a deeper understanding of discharge dynamical properties in the nanosecond timescale, which is important for various applications of these types of discharges in pressurized gases.« less

Temperature dependence of the enhanced inverse spin Hall voltage in Pt/Antiferromagnetic/ Y3Fe5O12

NASA Astrophysics Data System (ADS)

Brangham, J. T.; Lee, A. J.; Cheng, Y.; Yu, S. S.; Dunsiger, S. R.; Page, M. R.; Hammel, P. C.; Yang, F. Y.

The generation, propagation, and detection of spin currents are of intense interest in the field of spintronics. Spin current generation by FMR spin pumping using Y3Fe5O12 (YIG) and spin current detection by the inverse spin Hall effect (ISHE) in metals such as Pt have been well studied. This is due to YIG's exceptionally low damping and insulating behavior and the large spin Hall angle of Pt. Previously, our group showed that the ISHE voltages are significantly enhanced by adding a thin intermediate layer of an antiferromagnet (AFM) between Pt and YIG at room temperature. Recent theoretical work predicts a mechanism for this enhancement as well as the temperature dependence of the ISHE voltages of metal/AFM/YIG trilayers. The predictions show a maximum in the ISHE voltages for these systems near the magnetic phase transition temperature of the AFM. Here we present experimental results showing the temperature dependence for Pt/AFM/YIG structures with various AFMs. DOE Grant No. DE-SC0001304.

A Model of the THUNDER Actuator

NASA Technical Reports Server (NTRS)

Curtis, Alan R. D.

1997-01-01

A THUNDER actuator is a composite of three thin layers, a metal base, a piezoelectric wafer and a metal top cover, bonded together under pressure and at high temperature with the LaRC SI polyimid adhesive. When a voltage is applied between the metal layers across the PZT the actuator will bend and can generate a force. This document develops and describes an analytical model the transduction properties of THUNDER actuators. The model development is divided into three sections. First, a static model is described that relates internal stresses and strains and external displacements to the thermal pre-stress and applied voltage. Second, a dynamic energy based model is described that allows calculation of the resonance frequencies, developed force and electrical input impedance. Finally, a fully coupled electro-mechanical transducer model is described. The model development proceeds by assuming that both the thermal pre-stress and the piezoelectric actuation cause the actuator to deform in a pure bend in a single plane. It is useful to think of this as a two step process, the actuator is held flat, differential stresses induce a bending moment, the actuator is released and it bends. The thermal pre-stress is caused by the different amounts that the constituent layers shrink due to their different coefficients of thermal expansion. The adhesive between layers sets at a high temperature and as the actuator cools, the metal layers shrink more than the PZT. The PZT layer is put into compression while the metal layers are in tension. The piezoelectric actuation has a similar effect. An applied voltage causes the PZT layer to strain, which in turn strains the two metal layers. If the PZT layer expands it will put the metal layers into tension and PZT layer into compression. In both cases, if shear force effects are neglected, the actuator assembly will experience a uniform in-plane strain. As the materials each have a different elastic modulus, different stresses will develop in each layer and these stresses will induce a bending moment. When the actuator is released from its flat configuration, the differential stresses are relieved as the actuator bends.

Ultrananocrystalline Diamond Cantilever Wide Dynamic Range Acceleration/Vibration /Pressure Sensor

DOEpatents

Krauss, Alan R.; Gruen, Dieter M.; Pellin, Michael J.; Auciello, Orlando

2003-09-02

An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/V2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.

Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor

DOEpatents

Krauss, Alan R [Naperville, IL; Gruen, Dieter M [Downers Grove, IL; Pellin, Michael J [Naperville, IL; Auciello, Orlando [Bolingbrook, IL

2002-07-23

An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/N2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

NASA Astrophysics Data System (ADS)

Onufriyev, Valery. V.

2001-02-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

Voltage tunable two-color superlattice infrared photodetectors

NASA Astrophysics Data System (ADS)

Majumdar, Amlan; Choi, Kwong-Kit; Reno, John L.; Tsui, Daniel C.

2004-11-01

We present the design and fabrication of voltage tunable two-color superlattice infrared photodetectors (SLIPs), where the detection wavelength switches from the long-wavelength infrared (LWIR) range to the mid-wavelength infrared (MWIR) range upon reversing the polarity of applied bias. The photoactive region of these detectors contains multiple periods of two distinct short-period SLs that are designed for MWIR and LWIR detection. The voltage tunable operation is achieved by using two types of thick blocking barriers between adjacent SLs - undoped barriers on one side for low energy electrons and heavily-doped layers on the other side for high energy electrons. We grew two SLIP structures by molecular beam epitaxy. The first one consists of two AlGaAs/GaAs SLs with the detection range switching from the 7-11 μm band to the 4-7 μm range on reversing the bias polarity. The background-limited temperature is 55 and 80 K for LWIR and MWIR detection, respectively. The second structure comprises of strained InGaAs/GaAs/AlGaAs SLs and AlGaAs/GaAs SLs. The detection range of this SLIP changes from the 8-12 μm band to the 3-5 μm band on switching the bias polarity. The background-limited temperature is 70 and 110 K for LWIR and MWIR detection, respectively. This SLIP is the first ever voltage tunable MWIR/LWIR detector with performance comparable to those of one-color quantum-well infrared detectors designed for the respective wavelength ranges. We also demonstrate that the corrugated light coupling scheme, which enables normal-incidence absorption, is suitable for the two-color SLIPs. Since these SLIPs are two-terminal devices, they can be used with the corrugated geometry for the production of low-cost large-area two-color focal plane arrays.

Conservation voltage regulation (CVR) applied to energy savings by voltage-adjusting equipment through AMI

NASA Astrophysics Data System (ADS)

Lan, B.-R.; Chang, C.-A.; Huang, P.-Y.; Kuo, C.-H.; Ye, Z.-J.; Shen, B.-C.; Chen, B.-K.

2017-11-01

Conservation voltage reduction (CVR) includes peak demand reduction, energy conservation, carbon emission reduction, and electricity bill reduction. This paper analyzes the energy-reduction of Siwei Feeders with applying CVR, which are situated in Penghu region and equipped with smart meters. Furthermore, the applicable voltage reduction range for the feeders will be explored. This study will also investigate how the CVR effect and energy conservation are improved with the voltage control devices integrated. The results of this study can serve as a reference for the Taiwan Power Company to promote and implement voltage reduction and energy conservation techniques. This study is expected to enhance the energy-reduction performance of the Penghu Low Carbon Island Project.

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations

NASA Astrophysics Data System (ADS)

Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

2017-09-01

The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

Voltage controlled spintronic devices for logic applications

DOEpatents

You, Chun-Yeol; Bader, Samuel D.

2001-01-01

A reprogrammable logic gate comprising first and second voltage-controlled rotation transistors. Each transistor comprises three ferromagnetic layers with a spacer and insulating layer between the first and second ferromagnetic layers and an additional insulating layer between the second and third ferromagnetic layers. The third ferromagnetic layer of each transistor is connected to each other, and a constant external voltage source is applied to the second ferromagnetic layer of the first transistor. As input voltages are applied to the first ferromagnetic layer of each transistor, the relative directions of magnetization of the ferromagnetic layers and the magnitude of the external voltage determines the output voltage of the gate. By altering these parameters, the logic gate is capable of behaving as AND, OR, NAND, or NOR gates.

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations.

PubMed

Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

2017-09-15

The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

A temperature compensation methodology for piezoelectric based sensor devices

NASA Astrophysics Data System (ADS)

Wang, Dong F.; Lou, Xueqiao; Bao, Aijian; Yang, Xu; Zhao, Ji

2017-08-01

A temperature compensation methodology comprising a negative temperature coefficient thermistor with the temperature characteristics of a piezoelectric material is proposed to improve the measurement accuracy of piezoelectric sensing based devices. The piezoelectric disk is characterized by using a disk-shaped structure and is also used to verify the effectiveness of the proposed compensation method. The measured output voltage shows a nearly linear relationship with respect to the applied pressure by introducing the proposed temperature compensation method in a temperature range of 25-65 °C. As a result, the maximum measurement accuracy is observed to be improved by 40%, and the higher the temperature, the more effective the method. The effective temperature range of the proposed method is theoretically analyzed by introducing the constant coefficient of the thermistor (B), the resistance of initial temperature (R0), and the paralleled resistance (Rx). The proposed methodology can not only eliminate the influence of piezoelectric temperature dependent characteristics on the sensing accuracy but also decrease the power consumption of piezoelectric sensing based devices by the simplified sensing structure.

Experimental results on the influence of fluxes on partial discharge onset in PCB solder joints

NASA Astrophysics Data System (ADS)

Bulletti, Andrea; Capineri, Lorenzo; Materassi, Maurizio

2003-09-01

This work concerns the development of an experimental set-up for assessing the influence of fluxes on Partial Discharge (PD) onset in High Voltage (HV) devices soldered on Printed Circuit Boards (PCBs). In particular, the work considered the effects of three types of fluxes chosen in agreement with the directions of the Materials and Processes Division at ESA/ESTEC. Contaminated samples are formed by a standard FR-4 PCB board with a pair of copper electrodes and a protocol of contamination has been applied for all samples. The measuring system is placed inside a shielded chamber and provides measurements of Corona Inception Voltage (CIV), Corona Extinction Voltage (CEV) and PD amplitudes collected in a vacuum chamber with controlled temperature fixture. The results shows that flux Alpha 850-33 has the mean CIV smaller than other types of fluxes and the same result is observed for the mean CEV. Also the PD amplitudes are greater for samples contaminated with flux Alpha 850-33 than the other two types and similar in value for samples without flux.

Tough Nanocomposite Ionogel-based Actuator Exhibits Robust Performance

NASA Astrophysics Data System (ADS)

Liu, Xinhua; He, Bin; Wang, Zhipeng; Tang, Haifeng; Su, Teng; Wang, Qigang

2014-10-01

Ionogel electrolytes can be fabricated for electrochemical actuators with many desirable advantages, including direct low-voltage control in air, high electrochemical and thermal stability, and complete silence during actuation. However, the demands for active actuators with above features and load-driving ability remain a challenge; much work is necessary to enhance the mechanical strength of electrolyte materials. Herein, we describe a cross-linked supramolecular approach to prepare tough nanocomposite gel electrolytes from HEMA, BMIMBF4, and TiO2 via self-initiated UV polymerization. The tough and stable ionogels are emerging to fabricate electric double-layer capacitor-like soft actuators, which can be driven by electrically induced ion migration. The ionogel-based actuator shows a displacement response of 5.6 mm to the driving voltage of 3.5 V. After adding the additional mass weight of the same as the actuator, it still shows a large displacement response of 3.9 mm. Furthermore, the actuator can not only work in harsh temperature environments (100°C and -10°C) but also realize the goal of grabbing an object by adjusting the applied voltage.

Top and Split Gating Control of the Electrical Characteristics of a Two-dimensional Electron Gas in a LaAlO3/SrTiO3 Perovskite

NASA Astrophysics Data System (ADS)

Kwak, Yongsu; Song, Jonghyun; Kim, Jihwan; Kim, Jinhee

2018-04-01

A top gate field effect transistor was fabricated using polymethyl methacrylate (PMMA) as a gate insulator on a LaAlO3 (LAO)/SrTiO3 (STO) hetero-interface. It showed n-type behavior, and a depletion mode was observed at low temperature. The electronic properties of the 2-dimensional electron gas at the LAO/STO hetero-interface were not changed by covering LAO with PMMA following the Au top gate electrode. A split gate device was also fabricated to construct depletion mode by using a narrow constriction between the LAO/STO conduction interface. The depletion mode, as well as superconducting critical current, could be controlled by applying a split gate voltage. Noticeably, the superconducting critical current tended to decrease with decreasing the split gate voltage and finally became zero. These results indicate that a weak-linked Josephson junction can be constructed and destroyed by split gating. This observation opens the possibility of gate-voltage-adjustable quantum devices.

Tough nanocomposite ionogel-based actuator exhibits robust performance.

PubMed

Liu, Xinhua; He, Bin; Wang, Zhipeng; Tang, Haifeng; Su, Teng; Wang, Qigang

2014-10-20

Ionogel electrolytes can be fabricated for electrochemical actuators with many desirable advantages, including direct low-voltage control in air, high electrochemical and thermal stability, and complete silence during actuation. However, the demands for active actuators with above features and load-driving ability remain a challenge; much work is necessary to enhance the mechanical strength of electrolyte materials. Herein, we describe a cross-linked supramolecular approach to prepare tough nanocomposite gel electrolytes from HEMA, BMIMBF4, and TiO2 via self-initiated UV polymerization. The tough and stable ionogels are emerging to fabricate electric double-layer capacitor-like soft actuators, which can be driven by electrically induced ion migration. The ionogel-based actuator shows a displacement response of 5.6 mm to the driving voltage of 3.5 V. After adding the additional mass weight of the same as the actuator, it still shows a large displacement response of 3.9 mm. Furthermore, the actuator can not only work in harsh temperature environments (100°C and -10°C) but also realize the goal of grabbing an object by adjusting the applied voltage.

Tough Nanocomposite Ionogel-based Actuator Exhibits Robust Performance

PubMed Central

Liu, Xinhua; He, Bin; Wang, Zhipeng; Tang, Haifeng; Su, Teng; Wang, Qigang

2014-01-01

Ionogel electrolytes can be fabricated for electrochemical actuators with many desirable advantages, including direct low-voltage control in air, high electrochemical and thermal stability, and complete silence during actuation. However, the demands for active actuators with above features and load-driving ability remain a challenge; much work is necessary to enhance the mechanical strength of electrolyte materials. Herein, we describe a cross-linked supramolecular approach to prepare tough nanocomposite gel electrolytes from HEMA, BMIMBF4, and TiO2 via self-initiated UV polymerization. The tough and stable ionogels are emerging to fabricate electric double-layer capacitor-like soft actuators, which can be driven by electrically induced ion migration. The ionogel-based actuator shows a displacement response of 5.6 mm to the driving voltage of 3.5 V. After adding the additional mass weight of the same as the actuator, it still shows a large displacement response of 3.9 mm. Furthermore, the actuator can not only work in harsh temperature environments (100°C and −10°C) but also realize the goal of grabbing an object by adjusting the applied voltage. PMID:25327414

Model analysis and electrical characterization of atmospheric pressure cold plasma jet in pin electrode configuration

NASA Astrophysics Data System (ADS)

Deepak, G. Divya; Joshi, N. K.; Prakash, Ram

2018-05-01

In this study, both model analysis and electrical characterization of a dielectric barrier discharge based argon plasma jet have been carried at atmospheric pressure in a pin electrode configuration. The plasma and fluid dynamics modules of COMSOL multi-physics code have been used for the modeling of the plasma jet. The plasma parameters, such as, electron density, electron temperature and electrical potential have been analyzed with respect to the electrical parameters, i.e., supply voltage and supply frequency with and without the flow of gas. In all the experiments, gas flow rate has been kept constant at 1 liter per minute. This electrode configuration is subjected to a range of supply frequencies (10-25 kHz) and supply voltages (3.5-6.5 kV). The power consumed by the device has been estimated at different applied combinations (supply voltage & frequency) for optimum power consumption at maximum jet length. The maximum power consumed by the device in this configuration for maximum jet length of ˜26 mm is just ˜1 W.

Evaluation of biasing and protection circuitry components for cryogenic MMIC low-noise amplifiers

NASA Astrophysics Data System (ADS)

Lamb, James W.

2014-05-01

Millimeter-wave integrated circuits with gate lengths as short as 35 nm are demonstrating extremely low-noise performance, especially when cooled to cryogenic temperatures. These operate at low voltages and are susceptible to damage from electrostatic discharge and improper biasing, as well as being sensitive to low-level interference. Designing a protection circuit for low voltages and temperatures is challenging because there is very little data available on components that may be suitable. Extensive testing at low temperatures yielded a set of components and a circuit topology that demonstrates the required level of protection for critical MMICs and similar devices. We present a circuit that provides robust protection for low voltage devices from room temperature down to 4 K.

[Study on single-walled carbon nanotube thin film photoelectric device].

PubMed

Xie, Wen-bin; Zhu, Yong; Gong, Tian-cheng; Chen, Yu-lin; Zhang, Jie

2015-01-01

The single-walled carbon nanotube film photoelectric device was invented, and it can generate net photocurrent under bias voltage when it is illuminated by the laser. The influences of bias voltage, laser power and illuminating position on the net photocurrent were investigated. The experimental results showed that when the center of the film was illuminated, the photocurrent increased with the applied bias, but tended to saturate as the laser power increased. As the voltage and the laser power reached 0. 2 V and 22. 7 mW respectively, the photocurrent reached 0. 24 µA. When the voltage was removed, the photocurrent varied with the laser illuminating position on the film and its value was distributed symmetrically about the center of the device. The photocurrent reached maximum and almost zero respectively when the laser illuminated on two ends and the center of the film. Analysis proposes that the net photocurrent can be generated due to internal photoelectric effect when the device is under voltage and the laser illuminates on the center of the film. It can be also generated due to photo-thermoelectric effect when the device is under no voltage and the laser illuminates on the film, and the relation between the net photocurrent and the illuminating position was derived according to the nature of thermoelectric power of single-walled carbon nanotubes with the established temperature model, which coincides with experimental result. Two effects are the reasons for the generation and variety of the net photocurrent and they superimpose to form the result of the net photocurrent when the device is under general conditions of voltage and laser illuminating position. The device has potential applications in the areas of photovoltaic device and optical sensor for its characteristic.

Low-noise magnetometer based on inductance modulation in high-critical-temperature superconductor coil

NASA Astrophysics Data System (ADS)

Enpuku, Keiji; Matsuo, Masaaki; Yoshida, Yujiro; Yamashita, Shigeya; Sasayama, Teruyoshi; Yoshida, Takashi

2018-06-01

We developed a magnetometer based on inductance modulation of a coil made from a high-critical-temperature superconducting material. The coil inductance was modulated over time via a modulation current applied to a magnetic wire that was inserted into the coil. The magnetic field was then converted into a signal voltage using this time-dependent inductance. The relationship between magnetometer performance and the modulation current conditions was studied. Under appropriate conditions, the magnetometer had responsivity of 885 V/T. The magnetic field noise was 1.3 pT/Hz1/2 in the white noise region and 5.6 pT/Hz1/2 at f = 1 Hz.

Electronically controlled mechanical seal for aerospace applications--Part 2: Transient tests

NASA Technical Reports Server (NTRS)

Wolff, Paul J.; Salant, Richard F.

1995-01-01

An electronically controlled mechanical seal for use as the purge gas seal in a liquid oxygen turbopump has been fabricated and tested under transient operating conditions. The thickness of the lubricating film is controlled by adjusting the coning of the carbon face. This is accomplished by applying a voltage to a piezoelectric actuator to which the carbon face is bonded. The seal has been operated with a closed-loop control system that utilizes either the leakage rate or seal face temperature as the feedback. Both speed and pressure transients have been imposed on the seal. The transient tests have demonstrated that the seal is capable of maintaing low leakage rates while limiting face temperatures.

Transient Response in Monolithic Mach-Zehnder Optical Modulator Using (Ba,Sr)TiO3 Film Sputtered at Low Temperature on Silicon

NASA Astrophysics Data System (ADS)

Suzuki, Masato; Nagata, Kazuma; Tanushi, Yuichiro; Yokoyama, Shin

2007-04-01

We have fabricated Mach-Zhender interferometers (MZIs) using the (Ba,Sr)TiO3 (BST) film sputter-deposited at 450 °C, which is a critical temperature for the process after metallization. An optical modulation of about 10% is achieved when 200 V is applied (electric field in BST is 1.2× 104 V/cm). However, the response time of optical modulation to step function voltage is slow (1.0-6.3 s). We propose a model for the slow transient behavior based on movable ions and a long dielectric relaxation time for the BST film, and good qualitative agreement is obtained with experimental results.

Bias temperature instability in tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Mizubayashi, Wataru; Mori, Takahiro; Fukuda, Koichi; Ishikawa, Yuki; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Liu, Yongxun; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Matsukawa, Takashi; Masahara, Meishoku; Endo, Kazuhiko

2017-04-01

We systematically investigated the bias temperature instability (BTI) of tunnel field-effect transistors (TFETs). The positive BTI and negative BTI mechanisms in TFETs are the same as those in metal-oxide-semiconductor FETs (MOSFETs). In TFETs, although traps are generated in high-k gate dielectrics by the bias stress and/or the interface state is degraded at the interfacial layer/channel interface, the threshold voltage (V th) shift due to BTI degradation is caused by the traps and/or the degradation of the interface state locating the band-to-band tunneling (BTBT) region near the source/gate edge. The BTI lifetime in n- and p-type TFETs is improved by applying a drain bias corresponding to the operation conditions.

Gap features of layered iron-selenium-tellurium compound below and above the superconducting transition temperature by break-junction spectroscopy combined with STS

NASA Astrophysics Data System (ADS)

Ekino, T.; Sugimoto, A.; Gabovich, A. M.

2018-05-01

We studied correlations between the superconducting gap features of Te-substituted FeSe observed by scanning tunnelling spectroscopy (STS) and break-junction tunnelling spectroscopy (BJTS). At bias voltages outside the superconducting gap-energy range, the broad gap structure exists, which becomes the normal-state gap above the critical temperature, T c. Such behaviour is consistent with the model of the partially gapped density-wave superconductor involving both superconducting gaps and pseudogaps, which has been applied by us earlier to high-Tc cuprates. The similarity suggests that the parent electronic spectrum features should have much in common for these classes of materials.

Impact of interfacial resistance switching on thermoelectric effect of Nb-doped SrTiO3 single crystalline

NASA Astrophysics Data System (ADS)

Zhang, Peijian; Meng, Yang; Liu, Ziyu; Li, Dong; Su, Tao; Meng, Qingyu; Mao, Qi; Pan, Xinyu; Chen, Dongmin; Zhao, Hongwu

2012-03-01

The thermoelectric properties of the bistable resistance states in Nb doped SrTiO3 single crystal have been investigated. The Seebeck coefficients for both low and high resistance states change linearly with temperature. The three-terminals contrast measurement demonstrates that a large fraction of the voltage drop is applied at the tiny volume near the bottom interface between the electrode and the oxide bulk. Therefore, the metallic oxide bulk plays a dominant role in the temperature dependence of Seebeck coefficients. The thermoelectric properties of new resistance switching (RS) devices with minimized non-RS volume could be exploited for the RS mechanism and novel applications.

Actively controlled shaft seals for aerospace applications

NASA Technical Reports Server (NTRS)

Salant, Richard F.

1993-01-01

An electronically controlled mechanical seal for use as the purge gas seal in a liquid oxygen turbo pump has been fabricated and tested under transient operating conditions. The thickness of the lubricating film is controlled by adjusting the coning of the carbon face. This is accomplished by applying a voltage to a piezoelectric actuator to which the carbon face is bonded. The seal has been operated with a closed-loop control system that utilizes either the leakage rate or the seal face temperature as the feedback. Both speed and pressure transients have been imposed on the seal. The transient tests have demonstrated that the seal is capable of maintaining low leakage rates while limiting the face temperatures.

Aging and failure mode of electrochemical double layer capacitors during accelerated constant load tests

NASA Astrophysics Data System (ADS)

Kötz, R.; Ruch, P. W.; Cericola, D.

Electrochemical double layer capacitors of the BCAP0350 type (Maxwell Technologies) were tested under constant load conditions at different voltages and temperatures. The aging of the capacitors was monitored during the test in terms of capacitance, internal resistance and leakage current. Aging was significantly accelerated by elevated temperature or increased voltage. Only for extreme conditions at voltages of 3.5 V or temperatures above 70 °C the capacitors failed due to internal pressure build-up. No other failure events such as open circuit or short circuit were detected. Impedance measurements after the tests showed increased high frequency resistance, an increased distributed resistance and most likely an increase in contact resistance between electrode and current collector together with a loss of capacitance. Capacitors aged at elevated voltages (3.3 V) exhibited a tilting of the low frequency component, which implies an increase in the heterogeneity of the electrode surface. This feature was not observed upon aging at elevated temperatures (70 °C).

Evolution of streamer groups in nonthermal plasma

NASA Astrophysics Data System (ADS)

Okubo, M.

2015-12-01

Nonthermal plasmas (NTPs) induced by atmospheric nanosecond pulsed corona discharge have been studied for controlling pollution from combustors, such as boilers, incinerators, and diesel engines. In high-speed short-width high-voltage pulsed corona discharge-induced plasmas, primary streamer evolution is followed by secondary streamer evolution. Though this phenomenon is known experimentally, the details of the structures of the streamers and their evolution mechanisms have not been fully clarified. In this letter, we perform quasi two-dimensional numerical analysis of nonequilibrium NTP induced by a nanosecond positive pulsed corona discharge. The continuum fluid equations for two-temperature nonequilibrium NTP are used as governing equations. In this study, 197 gas phase reactions for 25 chemical species and 21 surface reactions on the inner glass wall surface are considered in an air plasma under atmospheric pressure. The simulated behavior of the streamer groups agrees with experimental observations. Soon after the voltage increases on the reactor, primary streamers are formed, which may transit the complete gap, disappearing near the peak voltage. Next, second streamers appear, disappearing at the end of the applied voltage pulse. The streamer wavelength and the distance between the streamers in the axial direction are determined. Moreover, ozone generation is shown to be more significant in the secondary streamer. This simulation will allow better predictions for nanosecond positive pulsed plasma systems.

Temperature characteristics for PTC material heating diesel fuel

NASA Astrophysics Data System (ADS)

Gu, Lefeng; Li, Xiaolu; Wang, Jun; Li, Ying; Li, Ming

2010-08-01

This paper gives a way which utilizes the PTC (Positive Temperature Coefficient) material to preheat diesel fuel in the injector in order to improve the cold starting and emissions of engine. A new injector is also designed. In order to understand the preheating process in this new injector, a dynamic temperature testing system combined with the MSP430F149 data acquisition system is developed for PTC material heating diesel fuel. Especially, the corresponding software and hardware circuits are explained. The temperature of diesel fuel preheating by PTC ceramics is measured under different voltages and distances, which Curie point is 75 °C. Diesel fuel is heated by self-defined temperature around the Curie point of PTC ceramics. The diesel fuel temperature rises rapidly in 2 minutes of the beginning, then can reach 60 °C within 5 minutes as its distance is 5mm away from the surface of PTC ceramics. However, there are a lot of fundamental studies and technology to be resolved in order to apply PTC material in the injector successfully.

Molecular Insights into Carbon Nanotube Supercapacitors: Capacitance Independent of Voltage and Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Guang; Li, Song; Atchison, Jennifer S.

2013-04-12

Molecular dynamics (MD) simulations of supercapacitors with single-walled carbon nanotube (SWCNT) electrodes in room-temperature ionic liquids were performed to investigate the influences of the applied electrical potential, the radius/curvature of SWCNTs, and temperature on their capacitive behavior. It is found that (1) SWCNTs-based supercapacitors exhibit a near-flat capacitance–potential curve, (2) the capacitance increases as the tube radius decreases, and (3) the capacitance depends little on the temperature. We report the first MD study showing the influence of the electrode curvature on the capacitance–potential curve and negligible dependence of temperature on capacitance of tubular electrode. The latter is in good agreementmore » with recent experimental findings and is attributed to the similarity of the electrical double layer (EDL) microstructure with temperature varying from 260 to 400 K. The electrode curvature effect is explained by the dominance of charge overscreening and increased ion density per unit area of electrode surface.« less

Interface-state density estimation of n-type nanocrystalline FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Nopparuchikun, Adison; Promros, Nathaporn; Sittimart, Phongsaphak; Onsee, Peeradon; Duangrawa, Asanlaya; Teakchaicum, Sakmongkon; Nogami, Tomohiro; Yoshitake, Tsuyoshi

2017-09-01

By utilizing pulsed laser deposition (PLD), heterojunctions comprised of n-type nanocrystalline (NC) FeSi2 thin films and p-type Si substrates were fabricated at room temperature in this study. Both dark and illuminated current density-voltage (J-V) curves for the heterojunctions were measured and analyzed at room temperature. The heterojunctions demonstrated a large reverse leakage current as well as a weak near-infrared light response. Based on the analysis of the dark forward J-V curves, at the V value  ⩽  0.2 V, we show that a carrier recombination process was governed at the heterojunction interface. When the V value was  >  0.2 V, the probable mechanism of carrier transportation was a space-charge limited-current process. Both the measurement and analysis for capacitance-voltage-frequency (C-V-f ) and conductance-voltage-frequency (G-V-f ) curves were performed in the applied frequency (f ) range of 50 kHz-2 MHz at room temperature. From the C-V-f and G-V-f curves, the density of interface states (N ss) for the heterojunctions was computed by using the Hill-Coleman method. The N ss values were 9.19  ×  1012 eV-1 cm-2 at 2 MHz and 3.15  ×  1014 eV-1 cm-2 at 50 kHz, which proved the existence of interface states at the heterojunction interface. These interface states are the probable cause of the degraded electrical performance in the heterojunctions. Invited talk at 5th Thailand International Nanotechnology Conference (Nano Thailand-2016), 27-29 November 2016, Nakhon Ratchasima, Thailand.

Ion transport and softening in a polymerized ionic liquid

DOE PAGES

Kumar, Rajeev; Bocharova, Vera; Strelcov, Evgheni; ...

2014-11-13

Polymerized ionic liquids (PolyILs) are promising materials for various solid state electronic applications such as dye-sensitized solar cells, lithium batteries, actuators, field-effect transistors, light emitting electrochemical cells, and electrochromic devices. However, fundamental understanding of interconnection between ionic transport and mechanical properties in PolyILs is far from complete. In this paper, local charge transport and structural changes in films of a PolyIL are studied using an integrated experiment-theory based approach. Experimental data for the kinetics of charging and steady state current–voltage relations can be explained by taking into account the dissociation of ions under an applied electric field (known as themore » Wien effect). Onsager's theory of the Wien effect coupled with the Poisson–Nernst–Planck formalism for the charge transport is found to be in excellent agreement with the experimental results. The agreement between the theory and experiments allows us to predict structural properties of the PolyIL films. We have observed significant softening of the PolyIL films beyond certain threshold voltages and formation of holes under a scanning probe microscopy (SPM) tip, through which an electric field was applied. Finally, the observed softening is explained by the theory of depression in glass transition temperature resulting from enhanced dissociation of ions with an increase in applied electric field.« less

Method for the depth corrected detection of ionizing events from a co-planar grids sensor

DOEpatents

De Geronimo, Gianluigi [Syosset, NY; Bolotnikov, Aleksey E [South Setauket, NY; Carini, Gabriella [Port Jefferson, NY

2009-05-12

A method for the detection of ionizing events utilizing a co-planar grids sensor comprising a semiconductor substrate, cathode electrode, collecting grid and non-collecting grid. The semiconductor substrate is sensitive to ionizing radiation. A voltage less than 0 Volts is applied to the cathode electrode. A voltage greater than the voltage applied to the cathode is applied to the non-collecting grid. A voltage greater than the voltage applied to the non-collecting grid is applied to the collecting grid. The collecting grid and the non-collecting grid are summed and subtracted creating a sum and difference respectively. The difference and sum are divided creating a ratio. A gain coefficient factor for each depth (distance between the ionizing event and the collecting grid) is determined, whereby the difference between the collecting electrode and the non-collecting electrode multiplied by the corresponding gain coefficient is the depth corrected energy of an ionizing event. Therefore, the energy of each ionizing event is the difference between the collecting grid and the non-collecting grid multiplied by the corresponding gain coefficient. The depth of the ionizing event can also be determined from the ratio.

Thermocouple, multiple junction reference oven

NASA Technical Reports Server (NTRS)

Leblanc, L. P. (Inventor)

1981-01-01

An improved oven for maintaining the junctions of a plurality of reference thermocouples at a common and constant temperature is described. The oven is characterized by a cylindrical body defining a heat sink with axially extended-cylindrical cavity a singularized heating element which comprises a unitary cylindrical heating element consisting of a resistance heating coil wound about the surface of metallic spool with an axial bore defined and seated in the cavity. Other features of the oven include an annular array of radially extended bores defined in the cylindrical body and a plurality of reference thermocouple junctions seated in the bores in uniformly spaced relation with the heating element, and a temperature sensing device seated in the axial bore for detecting temperature changes as they occur in the spool and circuit to apply a voltage across the coil in response to detected drops in temperatures of the spool.

Fabrication and performance evaluation of a metal-based bimorph piezoelectric MEMS generator for vibration energy harvesting

NASA Astrophysics Data System (ADS)

Kuo, Chun-Liang; Lin, Shun-Chiu; Wu, Wen-Jong

2016-10-01

This paper presents the development of a bimorph microelectromechanical system (MEMS) generator for vibration energy harvesting. The bimorph generator is in cantilever beam structure formed by laminating two lead zirconate titanate thick-film layers on both sides of a stainless steel substrate. Aiming to scavenge vibration energy efficiently from the environment and transform into useful electrical energy, the two piezoelectric layers on the device can be poled for serial and parallel connections to enhance the output voltage or output current respectively. In addition, a tungsten proof mass is bonded at the tip of the device to adjust the resonance frequency. The experimental result shows superior performance the generator. At the 0.5 g base excitation acceleration level, the devices pooled for serial connection and the device poled for parallel connection possess an open-circuit output voltage of 11.6 VP-P and 20.1 VP-P, respectively. The device poled for parallel connection reaches a maximum power output of 423 μW and an output voltage of 15.2 VP-P at an excitation frequency of 143.4 Hz and an externally applied based excitation acceleration of 1.5 g, whereas the device poled serial connection achieves a maximum power output of 413 μW and an output voltage of 33.0 VP-P at an excitation frequency of 140.8 Hz and an externally applied base excitation acceleration of 1.5 g. To demonstrate the feasibility of the MEMS generator for real applications, we finished the demonstration of a self-powered Bluetooth low energy wireless temperature sensor sending readings to a smartphone with only the power from the MEMS generator harvesting from vibration.

Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuits for Active Matrix Organic Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yu-Sheng; Liu, Yan-Wei

A new pixel design and driving method for active matrix organic light emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage programming method are proposed and verified using the SPICE simulator. We had employed an appropriate TFT model in SPICE simulation to demonstrate the performance of the pixel circuit. The OLED anode voltage variation error rates are below 0.35% under driving TFT threshold voltage deviation (Δ Vth =± 0.33V). The OLED current non-uniformity caused by the OLED threshold voltage degradation (Δ VTO =+0.33V) is significantly reduced (below 6%). The simulation results show that the pixel design can improve the display image non-uniformity by compensating for the threshold voltage deviation in the driving TFT and the OLED threshold voltage degradation at the same time.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

PubMed

Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

2016-08-10

This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

PubMed Central

Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

2016-01-01

This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively. PMID:28773801

High-Efficiency Power Module

NASA Technical Reports Server (NTRS)

Simons, Rainee N (Inventor); Wintucky, Edwin G (Inventor)

2013-01-01

One or more embodiments of the present invention pertain to an all solid-state microwave power module. The module includes a plurality of solid-state amplifiers configured to amplify a signal using a low power stage, a medium power stage, and a high power stage. The module also includes a power conditioner configured to activate a voltage sequencer (e.g., bias controller) when power is received from a power source. The voltage sequencer is configured to sequentially apply voltage to a gate of each amplifier and sequentially apply voltage to a drain of each amplifier.

High-Efficiency Power Module

NASA Technical Reports Server (NTRS)

Simons, Rainee N. (Inventor); Wintucky, Edwin G. (Inventor)

2015-01-01

One or more embodiments of the present invention pertain to an all solid-state microwave power module. The module includes a plurality of solid-state amplifiers configured to amplify a signal using a low power stage, a medium power stage, and a high power stage. The module also includes a power conditioner configured to activate a voltage sequencer (e.g., bias controller) when power is received from a power source. The voltage sequencer is configured to sequentially apply voltage to a gate of each amplifier and sequentially apply voltage to a drain of each amplifier.

Observation of electric potential in organic thin-film transistor by bias-applied hard X-ray photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Watanabe, Takeshi; Tada, Keisuke; Yasuno, Satoshi; Oji, Hiroshi; Yoshimoto, Noriyuki; Hirosawa, Ichiro

2016-03-01

The effect of gate voltage on electric potential in a pentacene (PEN) layer was studied by hard X-ray photoelectron spectroscopy under a bias voltage. It was observed that applying a negative gate voltage substantially increases the width of a C 1s peak. This suggested that injected and accumulated carriers in an organic thin film transistor channel modified the potential depth profile in PEN. It was also observed that the C 1s kinetic energy tends to increase monotonically with threshold voltage.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, William R. [Orinda, CA

1980-11-04

A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, W.R.

A series string of ignitrons for switching a large current at high voltage to ground is discussed. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, W.R.

1980-11-04

A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors. 1 fig.

Temperature, illumination and fluence dependence of current and voltage in electron irradiated solar cells

NASA Technical Reports Server (NTRS)

Obenschain, A. F.; Faith, T. J.

1973-01-01

Emperical equations have been derived from measurements of solar cell photovoltaic characteristics relating light generated current, IL, and open circuit voltage, VO, to cell temperature, T, intensity of illumination, W, and 1 Mev electron fluence, phi both 2 ohm-cm and 10 ohm-cm cells were tested. The temperature dependency of IL is similar for both resistivities at 140mw/sq cm; at high temperature the coefficient varies with fluence as phi 0.18, while at low temperatures the coefficient is relatively independent of fluence. Fluence dependent degration causes a decrease in IL at a rate proportional to phi 0.153 for both resistivities. At all intensities other than 560 mw/sq cm, a linear dependence of IL on illumination was found. The temperature coefficient of voltage was, to a good approximation, independent of both temperature and illumination for both resistivities. Illumination dependence of VOC was logarithmic, while the decrease with fluence of VOC varied as phi 0.25 for both resistivities.

A holistic aging model for Li(NiMnCo)O2 based 18650 lithium-ion batteries

NASA Astrophysics Data System (ADS)

Schmalstieg, Johannes; Käbitz, Stefan; Ecker, Madeleine; Sauer, Dirk Uwe

2014-07-01

Knowledge on lithium-ion battery aging and lifetime estimation is a fundamental aspect for successful market introduction in high-priced goods like electric mobility. This paper illustrates the parameterization of a holistic aging model from accelerated aging tests. More than 60 cells of the same type are tested to analyze different impact factors. In calendar aging tests three temperatures and various SOC are applied to the batteries. For cycle aging tests especially different cycle depths and mean SOC are taken into account. Capacity loss and resistance increase are monitored as functions of time and charge throughput during the tests. From these data physical based functions are obtained, giving a mathematical description of aging. To calculate the stress factors like temperature or voltage, an impedance based electric-thermal model is coupled to the aging model. The model accepts power and current profiles as input, furthermore an ambient air temperature profile can be applied. Various drive cycles and battery management strategies can be tested and optimized using the lifetime prognosis of this tool. With the validation based on different realistic driving profiles and temperatures, a robust foundation is provided.

Analytical Quality by Design in pharmaceutical quality assurance: Development of a capillary electrophoresis method for the analysis of zolmitriptan and its impurities.

PubMed

Orlandini, Serena; Pasquini, Benedetta; Caprini, Claudia; Del Bubba, Massimo; Pinzauti, Sergio; Furlanetto, Sandra

2015-11-01

A fast and selective CE method for the determination of zolmitriptan (ZOL) and its five potential impurities has been developed applying the analytical Quality by Design principles. Voltage, temperature, buffer concentration, and pH were investigated as critical process parameters that can influence the critical quality attributes, represented by critical resolution values between peak pairs, analysis time, and peak efficiency of ZOL-dimer. A symmetric screening matrix was employed for investigating the knowledge space, and a Box-Behnken design was used to evaluate the main, interaction, and quadratic effects of the critical process parameters on the critical quality attributes. Contour plots were drawn highlighting important interactions between buffer concentration and pH, and the gained information was merged into the sweet spot plots. Design space (DS) was established by the combined use of response surface methodology and Monte Carlo simulations, introducing a probability concept and thus allowing the quality of the analytical performances to be assured in a defined domain. The working conditions (with the interval defining the DS) were as follows: BGE, 138 mM (115-150 mM) phosphate buffer pH 2.74 (2.54-2.94); temperature, 25°C (24-25°C); voltage, 30 kV. A control strategy was planned based on method robustness and system suitability criteria. The main advantages of applying the Quality by Design concept consisted of a great increase of knowledge of the analytical system, obtained throughout multivariate techniques, and of the achievement of analytical assurance of quality, derived by probability-based definition of DS. The developed method was finally validated and applied to the analysis of ZOL tablets. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Removal of arsenate from groundwater by electrocoagulation method.

PubMed

Ali, Imran; Khan, Tabrez A; Asim, Mohd

2012-06-01

Arsenic, a toxic metalloid in drinking water, has become a major threat for human beings and other organisms. In the present work, attempts have been made to remove arsenate from the synthetic as well as natural water of Ballia district, India by electrocoagulation method. Efforts have also been made to optimize the various parameters such as initial arsenate concentration, pH, applied voltage, processing time, and working temperature. Electrocoagulation is a fast, inexpensive, selective, accurate, reproducible, and eco-friendly method for arsenate removal from groundwater. The present paper describes an electrocoagulation method for arsenate removal from groundwater using iron and zinc as anode and cathode, respectively. The maximum removal of arsenate was 98.8% at 2.0 mg L(-1), 7.0, 3.0 V, 10.0 min, and 30°C as arsenate concentration, pH, applied voltage, processing time, and working temperature, respectively. Relative standard deviation, coefficient of determination (r (2)), and confidence limits were varied from 1.50% to 1.59%, 0.9996% to 0.9998%, and 96.0% to 99.0%, respectively. The treated water was clear, colorless, and odorless without any secondary contamination. The developed and validated method was applied for arsenate removal of two samples of groundwater of Ballia district, U.P., India, having 0.563 to 0.805 mg L(-1), arsenate concentrations. The reported method is capable for the removal of arsenate completely (100% removal) from groundwater of Ballia district. There was no change in the groundwater quality after the removal of arsenate. The treated water was safe for drinking, bathing, and recreation purposes. Therefore, this method may be the choice of arsenate removal from natural groundwater.

Lithium-Ion Batteries Being Evaluated for Low-Earth-Orbit Applications

NASA Technical Reports Server (NTRS)

McKissock, Barbara I.

2005-01-01

The performance characteristics and long-term cycle life of aerospace lithium-ion (Li-ion) batteries in low-Earth-orbit applications are being investigated. A statistically designed test using Li-ion cells from various manufacturers began in September 2004 to study the effects of temperature, end-of-charge voltage, and depth-of-discharge operating conditions on the cycle life and performance of these cells. Performance degradation with cycling is being evaluated, and performance characteristics and failure modes are being modeled statistically. As technology improvements are incorporated into aerospace Li-ion cells, these new designs can be added to the test to evaluate the effect of the design changes on performance and life. Cells from Lithion and Saft have achieved over 2000 cycles under 10 different test condition combinations and are being evaluated. Cells from Mine Safety Appliances (MSA) and modules made up of commercial-off-the-shelf 18650 Li-ion cells connected in series/parallel combinations are scheduled to be added in the summer of 2005. The test conditions include temperatures of 10, 20, and 30 C, end-of-charge voltages of 3.85, 3.95, and 4.05 V, and depth-of-discharges from 20 to 40 percent. The low-Earth-orbit regime consists of a 55 min charge, at a constant-current rate that is 110 percent of the current required to fully recharge the cells in 55 min until the charge voltage limit is reached, and then at a constant voltage for the remaining charge time. Cells are discharged for 35 min at the current required for their particular depth-of-discharge condition. Cells are being evaluated in four-cell series strings with charge voltage limits being applied to individual cells by the use of charge-control units designed and produced at the NASA Glenn Research Center. These charge-control units clamp the individual cell voltages as each cell reaches its end-of-charge voltage limit, and they bypass the excess current from that cell, while allowing the full current flow to the remaining cells in the pack. The goal of this evaluation is to identify conditions and cell designs for Li-ion technology that can achieve more than 30,000 low-Earth-orbit cycles. Testing is being performed at the Naval Surface Warfare Center, Crane Division, in Crane, Indiana.

Luminescence in Conjugated Molecular Materials under Sub-bandgap Excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

So, Franky

2014-05-08

Light emission in semiconductors occurs when they are under optical and electrical excitation with energy larger than the bandgap energy. In some low-dimensional semiconductor heterostructure systems, this thermodynamic limit can be violated due to radiative Auger recombination (AR), a process in which the sub-bandgap energy released from a recombined electron-hole pair is transferred to a third particle leading to radiative band-to-band recombination.1 Thus far, photoluminescence up-conversion phenomenon has been observed in some low dimensional semiconductor systems, and the effect is very weak and it can only be observed at low temperatures. Recently, we discovered that efficient electroluminescence in poly[2-methoxy-5-(2’-ethylhexyloxy)-1, phenylenevinylene]more » (MEH-PPV) polymer light-emitting devices (PLEDs) at drive voltages below its bandgap voltage could be observed when a ZnO nanoparticles (NPs) electron injection layer was inserted between the polymer and the aluminum electrode. Specifically, emitted photons with energy of 2.13 eV can be detected at operating voltages as low as 1.2 V at room temperature. Based on these data, we propose that the sub-bandgap turn-on in the MEH-PPV device is due to an Auger-assisted energy up-conversion process. The significance of this discovery is three-fold. First, radiative recombination occurs at operating voltages below the thermodynamic bandgap voltage. This process can significantly reduce the device operating voltage. For example, the current density of the device with the ZnO NC layer is almost two orders of magnitude higher than that of the device without the NC layer. Second, a reactive metal is no longer needed for the cathode. Third, this electroluminescence up-conversion process can be applied to inorganic semiconductors systems as well and their operation voltages of inorganic LEDs can be reduced to about half of the bandgap energy. Based on our initial data, we propose that the sub-bandgap turn-on in MEH-PPV devices is due to Auger-assisted energy up-conversion process. Specifically, we propose that the up-conversion process is due to charge accumulation at the polymer/NPs interface. This model requires that holes should be the dominant carriers in the polymer and the polymer/ZnO NCs heterojunction should be a type II alignment. In order to determine the mechanism of the up-conversion process, we will characterize devices fabricated using polymers with different carrier transporting properties to determine whether hole accumulation at the polymer/nanocrystals is required. Likewise, we will also use NPs with different electronic structures to fabricate devices to determine how electron accumulation affects the up-conversion process. Finally, we will measure quantitatively the interface charge accumulation by electroabsorption and correlate the results with the up-conversion photoluminescence efficiency measurements under an applied electric field.« less

Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

NASA Astrophysics Data System (ADS)

Pavanello, Marcelo Antonio; de Souza, Michelly; Ribeiro, Thales Augusto; Martino, João Antonio; Flandre, Denis

2016-11-01

This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped transistors. Devices from two different technologies have been measured and show that the mobility increase rate with temperature for GC SOI transistors is similar to uniformly doped devices for temperatures down to 90 K. However, at liquid helium temperature the rate of mobility increase is larger in GC SOI than in standard devices because of the different mobility scattering mechanisms. The analog properties of GC SOI devices have been investigated down to 4.16 K and show that because of its better transconductance and output conductance, an intrinsic voltage gain improvement with temperature is also obtained for devices in the whole studied temperature range. GC devices are also capable of reducing the impact ionization due to the high electric field in the drain region, increasing the drain breakdown voltage of fully-depleted SOI MOSFETs at any studied temperature and the kink voltage at 4.16 K.

Bilateral comparison of 1 V and 10 V standards between the DMDM (Serbia) and the BIPM, January to March 2014 (part of the ongoing BIPM key comparison BIPM.EM-K11.a and b)

NASA Astrophysics Data System (ADS)

Solve, S.; Chayramy, R.; Stock, M.; Pantelic-Babic, J.; Sofranac, Z.; Zivkovic, V.

2015-01-01

As part of the ongoing BIPM key comparison BIPM.EM-K11.a and b, a comparison of the 1 V and 10 V voltage reference standards of the BIPM and the Directorate of Measures and Precious Metals (DMDM), Beograd, Serbia, was carried out from January to March 2014. Two BIPM Zener diode-based travelling standards (Fluke 732B), BIPM6 (Z6) and BIPMA (ZA), were transported by freight to DMDM. At DMDM, the reference standard for DC voltage is a Josephson Voltage Standard. The output electromotive force of each travelling standard was measured by direct comparison with the primary standard. At the BIPM, the travelling standards were calibrated, before and after the measurements at DMDM, with the Josephson Voltage Standard. Results of all measurements were corrected for the dependence of the output voltages of the Zener standards on internal temperature and ambient atmospheric pressure. The final result of the comparison is presented as the difference between the values assigned to DC voltage standards by DMDM, at the level of 1.018 V and 10 V, at DMDM, UDMDM, and those assigned by the BIPM, at the BIPM, UBIPM, at the reference date of the 13 February 2014. UDMDM - UBIPM = 0.094 µV uc = 0.072 µV, at 1 V UDMDM - UBIPM = 0.39 µV uc = 0.12 µV, at 10 V where uc is the combined standard uncertainty associated with the measured difference, including the uncertainty of the representation of the volt at the BIPM and at DMDM, based on KJ-90, and the uncertainty related to the comparison. The results at the 10 V level are not covered by the uncertainties with a coverage factor of 2. After the distribution of the Draft A, the DMDM discovered that the pressure gauge was defective. Some considerations on the correction to apply on the comparison result and the corresponding uncertainties are presented in the report. Nevertheless, the above results fully cover the CMCs of DMDM which are significantly larger. No corrections for temperature and pressure are applied in calibrations for customers' secondary standards. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

Nanosecond liquid crystalline optical modulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borshch, Volodymyr; Shiyanovskii, Sergij V.; Lavrentovich, Oleg D.

2016-07-26

An optical modulator includes a liquid crystal cell containing liquid crystal material having liquid crystal molecules oriented along a quiescent director direction in the unbiased state, and a voltage source configured to apply an electric field to the liquid crystal material wherein the direction of the applied electric field does not cause the quiescent director direction to change. An optical source is arranged to transmit light through or reflect light off the liquid crystal cell with the light passing through the liquid crystal material at an angle effective to undergo phase retardation in response to the voltage source applying themore » electric field. The liquid crystal material may have negative dielectric anisotropy, and the voltage source configured to apply an electric field to the liquid crystal material whose electric field vector is transverse to the quiescent director direction. Alternatively, the liquid crystal material may have positive dielectric anisotropy and the voltage source configured to apply an electric field to the liquid crystal material whose electric field vector is parallel with the quiescent director direction.« less

Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature

NASA Astrophysics Data System (ADS)

Sun, Jia; Wan, Qing; Lu, Aixia; Jiang, Jie

2009-11-01

Battery drivable low-voltage SnO2-based paper thin-film transistors with a near-zero threshold voltage (Vth=0.06 V) gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated at room temperature. The operating voltage is found to be as low as 1.5 V due to the huge gate specific capacitance (1.34 μF/cm2 at 40 Hz) related to EDL formation. The subthreshold gate voltage swing and current on/off ratio is found to be 82 mV/decade and 2.0×105, respectively. The electron field-effect mobility is estimated to be 47.3 cm2/V s based on the measured gate specific capacitance at 40 Hz.

Trace Impurity Analysis in Ta Films Using Glow Discharge Mass Spectrometry: Concentration Change of Impurities by Applying Negative Substrate Bias Voltage

NASA Astrophysics Data System (ADS)

Lim, Jae-Won; Mimura, Kouji; Isshiki, Minoru

2004-12-01

Glow discharge mass spectrometry (GDMS) was used to analyze a Ta target and Ta films for trace impurities. The Ta films were deposited on Si (100) substrate at substrate bias voltages of 0 V and -125 V using a non-mass separated ion beam deposition system. Although both Ta films were contaminated by impurities during the deposition, the Ta film deposited at a substrate bias voltage of -125 V showed lower impurity content than the Ta film deposited without the substrate bias voltage, which means that applying a negative bias voltage to the substrate decreased the total concentration of impurities. Furthermore, the concentration change of individual impurities in the Ta film is related to their ionization ratio in the argon discharge plasma. Considering the effect of the ionization potential of an individual impurity on the ionization ratio, purification by applying a negative bias voltage to the substrate results from Penning ionization and an ionization mechanism proposed in this study, as well as from the difference between the kinetic energies of Ta neutral atoms and Ta+ ions accelerated toward the substrate with/without a negative substrate bias voltage.

Interface traps contribution on transport mechanisms under illumination in metal-oxide-semiconductor structures based on silicon nanocrystals

NASA Astrophysics Data System (ADS)

Chatbouri, S.; Troudi, M.; Kalboussi, A.; Souifi, A.

2018-02-01

The transport phenomena in metal-oxide-semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer have been investigated, in dark condition and under visible illumination. At first, using deep-level transient spectroscopy (DLTS), we find the presence of series electron traps having very close energy levels (comprised between 0.28 and 0.45 eV) for ours devices (with/without Si-NCs). And a single peak appears at low temperature only for MOS with Si-NCs related to Si-NCs DLTS response. In dark condition, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap states for MOS without Si-NCs. The tunneling of charge carriers from highly poly-Si to Si substrate trough the trapping/detrapping mechanism in the Si-NCs, at low temperature, contributed to the conduction mechanism for MOS with Si-NCs. The light effect on transport mechanisms has been investigated using current-voltage ( I- V), and high frequency capacitance-voltage ( C- V) methods. We have been marked the photoactive trap effect in inversion zone at room temperature in I- V characteristics, which confirm the contribution of photo-generated charge on the transport mechanisms from highly poly-Si to Si substrate trough the photo-trapping/detrapping mechanism in the Si-NCs and interfaces traps levels. These results have been confirmed by an increasing about 10 pF in capacity's values for the C- V characteristics of MOS with Si-NCs, in the inversion region for inverse high voltage applied under photoexcitation at low temperature. These results are helpful to understand the principle of charge transport in dark condition and under illumination, of MOS structures having Si-NCs in the SiO x = 1.5 oxide matrix.

Two-stage electrostatic precipitator using induction charging

NASA Astrophysics Data System (ADS)

Takashima, Kazunori; Kohno, Hiromu; Katatani, Atsushi; Kurita, Hirofumi; Mizuno, Akira

2018-05-01

An electrostatic precipitator (ESP) without using corona discharge was investigated herein. The ESP employed a two-stage configuration, consisting of an induction charging-based particle charger and a parallel plate type particle collector. By applying a high voltage of several kV, under which no corona discharge was generated in the charger, particles were charged by induction due to contact with charger electrodes. The amount of charge on the charged particles increased with the applied voltage and turbulent air flow in the charger. Performance of the ESP equipped with the induction charger was investigated using ambient air. The removal efficiency for particles ranging 0.3 µm to 5 µm in diameter increased with applied voltage and turbulence intensity of gas flow in the charger when the applied voltage was sufficiently low not to generate corona discharge. This suggests that induction charging can be used for electrostatic precipitation, which can reduce ozone generation and power consumption significantly.

The influence of the substrate on the adhesive strength of the micro-arc oxidation coating developed on TiNi shape memory alloy

NASA Astrophysics Data System (ADS)

Hsieh, Shy-Feng; Ou, Shih-Fu; Chou, Chia-Kai

2017-01-01

TiNi shape memory alloys (SMAs), used as long-term implant materials, have a disadvantage. Ni-ion release from the alloys may trigger allergies in the human body. Micro-arc oxidation has been utilized to modify the surface of the TiNi SMA for improving its corrosion resistance and biocompatibility. However, there are very few reports investigating the essential adhesive strength between the micro-arc oxidized film and TiNi SMA. Two primary goals were attained by this study. First, Ti50Ni48.5Mo1.5 SMA having a phase transformation temperature (Af) less than body temperature and good shape recovery were prepared. Next, the Ti50Ni50 and Ti50Ni48.5Mo1.5 SMA surfaces were modified by micro-arc oxidation in phosphoric acid by applying relatively low voltages to maintain the adhesive strength. The results indicated that the pore size, film thickness, and P content increased with applied voltage. The micro-arc oxidized film, comprising Ti oxides, Ni oxide, and phosphate compounds, exhibited a glassy amorphous structure. The outmost surface of the micro-arc oxidized film contained a large amount of P (>12 at%) but only a trace of Ni (<5 at%). The adhesive strengths of all the micro-arc oxidized films exceeded the requirements of ISO 13779. Furthermore, Mo addition into TiNi SMAs was found to be favorable for improving the adhesive strength of the micro-arc oxidized film.

Optoelectronic and all-optical multiple memory states in vanadium dioxide

NASA Astrophysics Data System (ADS)

Coy, Horacio; Cabrera, Rafmag; Sepúlveda, Nelson; Fernández, Félix E.

2010-12-01

Vanadium dioxide exhibits a well-known insulator-to-metal transition during which several of its physical properties change significantly. A hysteresis loop develops for each of them as the material is heated and then cooled through the transition. In this work VO2/SiO2 samples were maintained—by heat sinking—at a selected temperature within the heating branch of the hysteresis loops for resistance and near-infrared transmittance, while brief thermal excursions of the VO2 film were caused by either voltage pulses applied to the film or laser light pulses irradiating the film. These pulses had durations from milliseconds to a few seconds and the resulting drops in resistance or transmittance were easily and repeatably measurable without appreciably affecting their new values. A sequence of equal-duration pulses (for either equal-voltage or equal-irradiation pulses) caused the resistance and infrared transmittance to continue to drop, each time by a smaller amount, and larger energy pulses were required in order to cause drops comparable with the initial one. The ability of the film to change the values of the measurands in this manner with additional pulses was maintained up to a limit defined by the outer hysteresis curve for the measurand in question. The results presented show that a plurality of memory "states" in VO2 can be established or "written" either by voltage pulses or by light pulses applied to the material, and queried or "read" by resistance or transmittance readings, or both. These states were found to remain stable for at least several hours, as long as temperature was kept constant, and are expected to persist indefinitely under this condition. In the all-optical case, if the same light beam is used for writing and reading the memory state, the device is an optical analog of a memristor.

Multifunctional Device based on phosphor-piezoelectric PZT: lighting, speaking, and mechanical energy harvesting.

PubMed

Lee, Sunghoon; Kang, Taewook; Lee, Wunho; Afandi, Mohammad M; Ryu, Jongho; Kim, Jongsu

2018-01-10

We demonstrated the tri-functional device based on all powder-processing methods by using ZnS powder as phosphor layer and piezoelectric material as dielectric layer. The fabricated device generated the electroluminescent (EL) light from phosphor and the sound from piezoelectric sheet under a supply of external electric power, and additionally harvested the reverse-piezoelectric energy to be converted into EL light. Under sinusoidal applied voltage, EL luminances were exponentially increased with a maximum luminous efficiency of 1.3 lm/W at 40 V and 1,000 Hz, and sound pressure levels (SPLs) were linearly increased. The EL luminances were linearly dependent on applied frequency while the SPLs showed the parabolic increase behavior below 1,000 Hz and then the flat response. The temperature dependence on EL luminances and SPLs was demonstrated; the former was drastically increased and the latter was slightly decreased with the increase of temperature. Finally, as an energy harvesting application, the piezoelectric-induced electroluminescence effect was demonstrated by applying only mechanical pressure to the device without any external electric power.

Evaluation of a silicon photomultiplier PET insert for simultaneous PET and MR imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ko, Guen Bae; Kim, Kyeong Yun; Yoon, Hyun Suk

2016-01-15

Purpose: In this study, the authors present a silicon photomultiplier (SiPM)-based positron emission tomography (PET) insert dedicated to small animal imaging with high system performance and robustness to temperature change. Methods: The insert consists of 64 LYSO-SiPM detector blocks arranged in 4 rings of 16 detector blocks to yield a ring diameter of 64 mm and axial field of view of 55 mm. Each detector block consists of a 9 × 9 array of LYSO crystals (1.2 × 1.2 × 10 mm{sup 3}) and a monolithic 4 × 4 SiPM array. The temperature of each monolithic SiPM is monitored, andmore » the proper bias voltage is applied according to the temperature reading in real time to maintain uniform performance. The performance of this PET insert was characterized using National Electrical Manufacturers Association NU 4-2008 standards, and its feasibility was evaluated through in vivo mouse imaging studies. Results: The PET insert had a peak sensitivity of 3.4% and volumetric spatial resolutions of 1.92 (filtered back projection) and 0.53 (ordered subset expectation maximization) mm{sup 3} at center. The peak noise equivalent count rate and scatter fraction were 42.4 kcps at 15.08 MBq and 16.5%, respectively. By applying the real-time bias voltage adjustment, an energy resolution of 14.2% ± 0.3% was maintained and the count rate varied ≤1.2%, despite severe temperature changes (10–30 °C). The mouse imaging studies demonstrate that this PET insert can produce high-quality images useful for imaging studies on the small animals. Conclusions: The developed MR-compatible PET insert is designed for insertion into a narrow-bore magnetic resonance imaging scanner, and it provides excellent imaging performance for PET/MR preclinical studies.« less

Three distinct modes in a surface micro-discharge in atmospheric pressure He + N{sub 2} mixtures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Dong; Liu, Dingxin, E-mail: liudingxin@mail.xjtu.edu.cn; He, Tongtong

2015-12-15

A surface micro-discharge in atmospheric pressure He + N{sub 2} mixtures is studied in this paper with an emphasis on the discharge modes. With the N{sub 2} admixture increasing from 0.1% to 20%, the discharge evolves from a spatially diffuse mode to a filamentary mode during positive half-cycles of the applied voltage. However during the negative half-cycles, an additional patterned mode emerges between the diffuse and the filamentary modes, which has not been reported before to exist in surface micro-discharges. In the diffuse and patterned modes, the plasmas cover almost the entirety of the mesh area during one cycle after plasma ignitionmore » in all mesh elements, and the discharge power increases linearly with the applied voltage. In contrast, plasma coverage of the mesh area is only partial in the filamentary mode and the plasma is more unstable with the discharge power increasing exponentially with the applied voltage. As the surface micro-discharge evolves through the three modes, the density of excited species changes significantly, for instance, the density of N{sub 2}{sup +}(B) drops by ∼20-fold from [N{sub 2}] = 0.2% to 20%. The N{sub 2}{sup +}(B) is predicted to be generated mainly through successive processes of Penning ionization by helium metastables and electron-impact excitation of N{sub 2}{sup +}(X), the latter is most responsible for the density decrease of N{sub 2}{sup +}(B) because much more N{sub 2}{sup +}(X) is converted to N{sub 4}{sup +}(X) as the increase of N{sub 2} fraction. Also, the electron density and electron temperature decrease with the discharge mode transition.« less

Relating voltage and thermal safety in Li-ion battery cathodes: a high-throughput computational study.

PubMed

Jain, Anubhav; Hautier, Geoffroy; Ong, Shyue Ping; Dacek, Stephen; Ceder, Gerbrand

2015-02-28

High voltage and high thermal safety are desirable characteristics of cathode materials, but difficult to achieve simultaneously. This work uses high-throughput density functional theory computations to evaluate the link between voltage and safety (as estimated by thermodynamic O2 release temperatures) for over 1400 cathode materials. Our study indicates that a strong inverse relationship exists between voltage and safety: just over half the variance in O2 release temperature can be explained by voltage alone. We examine the effect of polyanion group, redox couple, and ratio of oxygen to counter-cation on both voltage and safety. As expected, our data demonstrates that polyanion groups improve safety when comparing compounds with similar voltages. However, a counterintuitive result of our study is that polyanion groups produce either no benefit or reduce safety when comparing compounds with the same redox couple. Using our data set, we tabulate voltages and oxidation potentials for over 105 combinations of redox couple/anion, which can be used towards the design and rationalization of new cathode materials. Overall, only a few compounds in our study, representing limited redox couple/polyanion combinations, exhibit both high voltage and high safety. We discuss these compounds in more detail as well as the opportunities for designing safe, high-voltage cathodes.

Determination of electrostatic force and its characteristics based on phase difference by amplitude modulation atomic force microscopy

NASA Astrophysics Data System (ADS)

Wang, Kesheng; Cheng, Jia; Yao, Shiji; Lu, Yijia; Ji, Linhong; Xu, Dengfeng

2016-12-01

Electrostatic force measurement at the micro/nano scale is of great significance in science and engineering. In this paper, a reasonable way of applying voltage is put forward by taking an electrostatic chuck in a real integrated circuit manufacturing process as a sample, applying voltage in the probe and the sample electrode, respectively, and comparing the measurement effect of the probe oscillation phase difference by amplitude modulation atomic force microscopy. Based on the phase difference obtained from the experiment, the quantitative dependence of the absolute magnitude of the electrostatic force on the tip-sample distance and applied voltage is established by means of theoretical analysis and numerical simulation. The results show that the varying characteristics of the electrostatic force with the distance and voltage at the micro/nano scale are similar to those at the macroscopic scale. Electrostatic force gradually decays with increasing distance. Electrostatic force is basically proportional to the square of applied voltage. Meanwhile, the applicable conditions of the above laws are discussed. In addition, a comparison of the results in this paper with the results of the energy dissipation method shows the two are consistent in general. The error decreases with increasing distance, and the effect of voltage on the error is small.

Method for passively compensating for temperature coefficient of gain in silicon photomultipliers and similar devices

DOEpatents

McKisson, John E.; Barbosa, Fernando

2015-09-01

A method for designing a completely passive bias compensation circuit to stabilize the gain of multiple pixel avalanche photo detector devices. The method includes determining circuitry design and component values to achieve a desired precision of gain stability. The method can be used with any temperature sensitive device with a nominally linear coefficient of voltage dependent parameter that must be stabilized. The circuitry design includes a negative temperature coefficient resistor in thermal contact with the photomultiplier device to provide a varying resistance and a second fixed resistor to form a voltage divider that can be chosen to set the desired slope and intercept for the characteristic with a specific voltage source value. The addition of a third resistor to the divider network provides a solution set for a set of SiPM devices that requires only a single stabilized voltage source value.