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Sample records for area hybrid photodiodes

  1. Amplifiers dedicated for large area SiC photodiodes

    NASA Astrophysics Data System (ADS)

    Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

    2016-09-01

    Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

  2. Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

    NASA Technical Reports Server (NTRS)

    Zheng, Xinyu; Pain, Bedabrata

    2005-01-01

    A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would

  3. Using Photodiodes in the Laboratory.

    ERIC Educational Resources Information Center

    Jenkins, T. E.

    1995-01-01

    Describes the most popular optical detector in the design of photodiode detector circuits. Discusses how a photodiode works, points to consider in the design of a photodiode, and photodiode hybrids. (AIM)

  4. Recent advances in very large area avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Squillante, Michael R.; Christian, James; Entine, Gerald; Farrell, Richard; Karger, Arieh M.; McClish, Mickel; Myers, Richard; Shah, Kanai S.; Taylor, David; Vanderpuye, Kofi; Waer, Peter; Woodring, Mitchell

    2003-09-01

    The Avalanche Photodiode (APD) is a unique device that combines the advantages of solid state photodetectors with those of high gain devices such as photomultiplier tubes (PMTs). APDs have internal gain that provides a high signal-to-noise ratio. APDs have high quantum efficiency, are fast, compact, and rugged. These properties make them suitable detectors for important applications such as LADAR, detection and identification toxic chemicals and bio-warfare agents, LIDAR fluorescence detection, stand-off laser induced breakdown spectroscopy (LIBS), and nuclear detectors and imagers. Recently there have been significant technical breakthroughs in fabricating very large APDs, APD arrays, and position sensitive APD arrays (PSAPD). Signal gain of over 10,000 has been achieved, single element APDs have been fabricated with active area greater than 40 cm2, monolithic pixelated arrays with up to 28 x 28 elements have been fabricated, and position sensitive APDs have been developed and tested. Additionally, significant progress has been made in improving the fabrication process to provide better uniformity and high yield, permitting cost effective manufacturing of APDs for reduced cost.

  5. A slot-scanned photodiode-array/CCD hybrid detector for digital mammography.

    PubMed

    Mainprize, James G; Ford, Nancy L; Yin, Shi; Tümer, Türmay; Yaffe, Martin J

    2002-02-01

    We have developed a novel direct conversion detector for use in a slot-scanning digital mammography system. The slot-scan concept allows for dose efficient scatter rejection and the ability to use small detectors to produce a large-area image. The detector is a hybrid design with a 1.0 mm thick silicon PIN photodiode array (the x-ray absorber) indium-bump bonded to a CCD readout that is operated in time-delay integration (TDI) mode. Because the charge capacity requirement for good image quality exceeds the capabilities of standard CCDs, a novel CCD was developed. This CCD consists of 24 independent sections, each acting as a miniature CCD with eight rows for TDI. The signal from each section is combined off-chip to produce a full signal image. The MTF and DQE for the device was measured at several exposures and compared to a linear systems model of signal and noise propagation. Because of the scanning nature of TDI imaging, both the MTF(f) and DQE(f) are reduced along the direction of the scanning motion. For a 26 kVp spectrum, the DQE(0) was measured to be 0.75+/-0.02 for an exposure of 1.29 x 10(-5) C/kg (50 mR).

  6. Monolithic and hybrid near infrared detection and imaging based on poly-Ge photodiode arrays

    NASA Astrophysics Data System (ADS)

    Masini, G.; Colace, L.; Petulla, F.; Assanto, G.; Cencelli, V.; DeNotaristefani, F.

    2005-02-01

    In recent years, several Ge-on-Si technologies for the fabrication of near infrared photodetectors on Si substrates were proposed. In particular, using a low temperature (300 °C) technique, we have demonstrated poly-Ge_on_Si detectors with high speed and good NIR responsivity. The low process temperature allows the monolithic integration of the detectors as a final step in the fabrication of Si CMOS integrated circuits. After an introduction on poly-Ge, we describe a novel integrated chip (NIRCAM-1) designed as a readout/control circuit for arrays of 64 (32) poly-Ge_on_Si photodetectors. The photodiodes, monolithically integrated (wire-bonded with a hybrid approach) on the IC, generate a photocurrent which is then ADC converted after subtraction of the dark component, thus allowing a convenient digital readout of the array. The extensive optoelectronic characterization of the IC is presented.

  7. ZnO(N)-Spiro-MeOTAD hybrid photodiode: an efficient self-powered fast-response UV (visible) photosensor.

    PubMed

    Game, Onkar; Singh, Upendra; Kumari, Tanya; Banpurkar, Arun; Ogale, Satishchandra

    2014-01-07

    Organic-inorganic hybrid photo-detectors with a self-sufficient mode of operation represent a research area of great current interest. In most efficient photodetectors and optoelectronic devices compound semiconductors containing toxic elements such as Cd, As, Te, S, Se etc. are used and these are also expensive. Hence there is also a rapidly growing interest in replacing these with environmentally friendly and earth-abundant materials. Herein, we report a facile solution-processed fabrication of a self-powered organic-inorganic hybrid photodetector using n-type oriented ZnO nanorods and p-type Spiro-MeOTAD semiconductor. ZnO is eco-friendly and earth-abundant, and Spiro-MeOTAD is non-hazardous. We show that the latter has far less toxicity than the toxic elements stated above. This visible blind UV photodetector shows high sensitivity (10(2)) and a UV/visible rejection ratio of 300. It also exhibits fast response times of τ(rise) ~ 200 μs and τ(fall) ~ 950 μs. Importantly, with a small modification of nitrogen incorporation in ZnO one can also realize a highly-sensitive self-powered visible light photodetector with at least 1000% (or higher) improvements in quality factors (photocurrent/sensitivity/response time) as compared to previously reported organic-inorganic hybrid photo-detectors based on metal-chalcogenides (CdS-PANI or CuInSe2-P3HT). Interestingly, the broadband sensitivity of such N:ZnO-Spiro-MeOTAD photodiode enables sensing of low intensity (~28 μW cm(-2)) ambient white light with a high photocurrent density of 120 nA cm(-2) making it an efficient ambient white light detector.

  8. A 10Gb/s transimpedance amplifier for hybrid integration of a Ge PIN waveguide photodiode

    NASA Astrophysics Data System (ADS)

    Polzer, A.; Gaberl, W.; Swoboda, R.; Zimmermann, H.; Fedeli, J.-M.; Vivien, L.

    2010-05-01

    The presented paper describes a 10 Gbps optical receiver. The transimpedance amplifier (TIA) is realized in standard 0.35 μm SiGe BiCMOS technology. The main novelty of the presented design - investigated in the European Community project HELIOS - is the hybrid connection of the optical detector. The used Germanium photodetector will be directly mounted onto the receiver. A model of the relevant parasitics of the photodetector itself and the novel connection elements (micropads, metal vias and metal lines) is described. Based on this photodetector model an optical receiver circuit was optimized for maximum sensitivity at data rates in the range of 10 Gbps. The design combines a TIA and two limiting amplifier stages followed by a 50 Ω CML-style logic-level output driver. To minimize power supply noise and substrate noise, a fully differential design is used. A dummy TIA provides a symmetrical input signal reference and a control loop is used to compensate the offset levels. The TIA is built around a common-emitter stage and features a feedback resistor of 4.2 Ω. The total transimpedance of the complete receiver chain is in the range of 275 kΩ. The value of the active feedback resistor can be reduced via an external control voltage to adapt the design to different overall gain requirements. The two limiting amplifier stages are realized as differential amplifiers with voltage followers. The output buffer is implemented with cascode differential amplifiers. The output buffer is capable of driving a differential 50Ω output with a calculated output swing of 800mVp-p. Simulations show an overall bandwidth of 7.2 GHz. The lower cutoff frequency is below 60 kHz. The equivalent input noise current is 408 nA. With an estimated total photodiode responsivity of 0.5 A/W this allows a sensitivity of around - 23.1 dBm (BER = 10-9). The device operates from a single 3.3 V power supply and the TIAs and the limiting amplifier consume 32 mA.

  9. Response of large area avalanche photodiodes to low energy x rays

    SciTech Connect

    Gentile, T. R.; Bales, M.; Arp, U.; Dong, B.; Farrell, R.

    2012-05-15

    For an experiment to study neutron radiative beta-decay, we operated large area avalanche photodiodes (APDs) near liquid nitrogen temperature to detect x rays with energies between 0.2 keV and 20 keV. Whereas there are numerous reports of x ray spectrometry using APDs at energies above 1 keV, operation near liquid nitrogen temperature allowed us to reach a nominal threshold of 0.1 keV. However, due to the short penetration depth of x rays below 1 keV, the pulse height spectrum of the APD become complex. We studied the response using monochromatic x ray beams and employed phenomenological fits of the pulse height spectrum to model the measurement of a continuum spectrum from a synchrotron. In addition, the measured pulse height spectrum was modelled using a profile for the variation in efficiency of collection of photoelectrons with depth into the APD. The best results are obtained with the collection efficiency model.

  10. Low-Noise Large-Area Photoreceivers with Low Capacitance Photodiodes

    NASA Technical Reports Server (NTRS)

    Joshi, Abhay M. (Inventor); Datta, Shubhashish (Inventor)

    2013-01-01

    A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.

  11. Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

    2010-01-01

    The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

  12. Hybrid photomultiplier tube and photodiode parallel detection array for wideband optical spectroscopy of the breast guided by magnetic resonance imaging

    NASA Astrophysics Data System (ADS)

    El-Ghussein, Fadi; Mastanduno, Michael A.; Jiang, Shudong; Pogue, Brian W.; Paulsen, Keith D.

    2014-01-01

    A new optical parallel detection system of hybrid frequency and continuous-wave domains was developed to improve the data quality and accuracy in recovery of all breast optical properties. This new system was deployed in a previously existing system for magnetic resonance imaging (MRI)-guided spectroscopy, and allows incorporation of additional near-infrared wavelengths beyond 850 nm, with interlaced channels of photomultiplier tubes (PMTs) and silicon photodiodes (PDs). The acquisition time for obtaining frequency-domain data at six wavelengths (660, 735, 785, 808, 826, and 849 nm) and continuous-wave data at three wavelengths (903, 912, and 948 nm) is 12 min. The dynamic ranges of the detected signal are 105 and 106 for PMT and PD detectors, respectively. Compared to the previous detection system, the SNR ratio of frequency-domain detection was improved by nearly 103 through the addition of an RF amplifier and the utilization of programmable gain. The current system is being utilized in a clinical trial imaging suspected breast cancer tumors as detected by contrast MRI scans.

  13. Hybrid photomultiplier tube and photodiode parallel detection array for wideband optical spectroscopy of the breast guided by magnetic resonance imaging

    PubMed Central

    Mastanduno, Michael A.; Jiang, Shudong; Pogue, Brian W.; Paulsen, Keith D.

    2013-01-01

    Abstract. A new optical parallel detection system of hybrid frequency and continuous-wave domains was developed to improve the data quality and accuracy in recovery of all breast optical properties. This new system was deployed in a previously existing system for magnetic resonance imaging (MRI)-guided spectroscopy, and allows incorporation of additional near-infrared wavelengths beyond 850 nm, with interlaced channels of photomultiplier tubes (PMTs) and silicon photodiodes (PDs). The acquisition time for obtaining frequency-domain data at six wavelengths (660, 735, 785, 808, 826, and 849 nm) and continuous-wave data at three wavelengths (903, 912, and 948 nm) is 12 min. The dynamic ranges of the detected signal are 105 and 106 for PMT and PD detectors, respectively. Compared to the previous detection system, the SNR ratio of frequency-domain detection was improved by nearly 103 through the addition of an RF amplifier and the utilization of programmable gain. The current system is being utilized in a clinical trial imaging suspected breast cancer tumors as detected by contrast MRI scans. PMID:23979460

  14. A hybrid organic semiconductor/silicon photodiode for efficient ultraviolet photodetection.

    PubMed

    Levell, J W; Giardini, M E; Samuel, I D W

    2010-02-15

    A method employing conjugated polymer thin film blends is shown to provide a simple and convenient way of greatly enhancing the ultraviolet response of silicon photodetectors. Hybrid organic semiconductor/silicon photodetectors are demonstrated using fluorene copolymers and give a quantum efficiency of 60% at 200 nm. The quantum efficiency is greater than 34% over the entire 200-620 nm range. These devices show promise for use in high sensitivity, low cost UV-visible photodetection and imaging applications.

  15. I-V and noise performance in MWIR to VLWIR large area Hg1-xCdxTe photodiodes

    NASA Astrophysics Data System (ADS)

    D'Souza, A. I.; Stapelbroek, M. G.; Dolan, P. N.; Wijewarnasuriya, P. S.; Boehmer, E.; Smith, D. S.; Ehlert, J. C.; Andrews, J. E.

    2005-05-01

    The National Polar-orbiting Operational Environmental Satellite System (NPOESS), is overseen by the Integrated Program Office (IPO), a joint effort of the Department of Defense, Department of Commerce and NASA. One of the instruments on the NPOESS satellite is the Cross-track Infrared Sounder (CrIS) instrument. CrIS is a Fourier Transform interferometric infrared (FTIR) sensor used to measure earth radiance at high spectral resolution to derive pressure, temperature, and moisture profiles of the atmosphere from the ground on up. Each CrIS instrument contains three different cutoff wavelength (λc)focal plane modules (FPMs): an SWIR FPM [λc(98 K) ~ 5 mm], MWIR FPM [λc(98 K) ~ 9 mm] and a LWIR FPM [λc(81 K) ~ 15.5 mm]. There are nine large (850 mm diameter) photodiodes per FPM, the nine detectors being arranged in a 3 x 3 array. The nine detectors are placed under tight tolerances in the X, Y, and Z dimensions. The steps involved in the transfer of photodiodes as part of a newly fabricated wafer to the mounting of the photodiodes on the FPM involves many processing steps including a significant amount of dicing, cleaning, wire bonding and baking at elevated temperatures. Quantum efficiency and 1/f noise in Hg1-xCdxTe photodiodes are critical parameters that limit the sensitivity of infrared sounders. The ratio α, defined as the noise current in unit bandwidth in(f = 1 Hz, Vd, Δf = 1 Hz) to the dark current Id(Vd), that is, α = in/Id is one of the parameters used to select photodiodes for placement in FPMs. α is equivalent to √αH/N that appears in the well-known Hooge expression. For the sixty-one, λc ~ 9 μm photodiodes measured at 60 mV reverse bias and at 98 K, the average value of αdark = 1.3 x 10-4 in the dark and αPHOTO = in/IPHOTO is ~ 2 x 10-6 under illuminated conditions. These values of α are a factor of two lower than that reported previously. The λc ~ 15.5 μm photodiodes have average αdark = 1.3 x 10-5 with the highest performance

  16. Lateral drift-field photodiode for low noise, high-speed, large photoactive-area CMOS imaging applications

    NASA Astrophysics Data System (ADS)

    Durini, Daniel; Spickermann, Andreas; Mahdi, Rana; Brockherde, Werner; Vogt, Holger; Grabmaier, Anton; Hosticka, Bedrich J.

    2010-12-01

    In this work a theoretical concept and simulations are presented for a novel lateral drift-field photodetector pixel to be fabricated in a 0.35 μm CMOS process. The proposed pixel consists of a specially designed n-well with a non-uniform lateral doping profile that follows a square-root spatial dependence. "Buried" MOS capacitor-based collection-gate, a transfer-gate, and an n-type MOSFET source/drain n + floating-diffusion serve to realize a non-destructive readout. The pixel readout is performed using an in-pixel source-follower pixel buffer configuration followed by an output amplifier featuring correlated double-sampling. The concentration gradient formed in the n-well employs a single extra implantation step in the 0.35 μm CMOS process mentioned and requires only a single extra mask. It generates an electrostatic potential gradient, i.e. a lateral drift-field, in the photoactive area of the pixel which enables high charge transfer speed and low image-lag. According to the simulation results presented, charge transfer times of less than 3 ns are to be expected.

  17. Gallium-based avalanche photodiode optical crosstalk

    NASA Astrophysics Data System (ADS)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-11-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time.

  18. UV photodetectors, focal plane arrays, and avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    McClintock, Ryan

    2007-12-01

    The study of III-Nitride based optoelectronics devices is a maturing field, but there are still many underdeveloped areas in which to make a contribution of new and original research. This work specifically targets the goals of realizing high-efficiency back-illuminated solar-blind photodetectors, solar-blind focal plane arrays, and visible- and solar-blind Avalanche photodiodes. Achieving these goals has required systematic development of the material growth and characterization, device modeling and design, device fabrication and processing, and the device testing and qualification. This work describes the research conducted and presents relevant devices results. The AlGaN material system has a tunable direct bandgap that is ideally suited to detection of ultraviolet light, however this material system suffers from several key issues, making realization of high-efficiency photodetectors difficult: large dislocation densities, low n-type and p-type doping efficiency, and lattice and thermal expansion mismatches leading to cracking of the material. All of these problems are exacerbated by the increased aluminum compositions necessary in back-illuminated and solar-blind devices. Overcoming these obstacles has required extensive development and optimization of the material growth techniques necessary: this includes everything from the growth of the buffer and template, to the growth of the active region. The broad area devices realized in this work demonstrate a quantum efficiency that is among the highest ever reported for a back-illuminated solar-blind photodetector (responsivity of 157 mA/W at 280nm, external quantum efficiency of 68%). Taking advantage of the back illuminated nature of these detectors, we have successfully developed the technology to hybridize and test a solar-blind focal plane array camera. The initial focal plane array shows good uniformity and reasonable operability, and several images from this first camera are presented. However, in order to

  19. Characterization and identification of the chemical constituents from tartary buckwheat (Fagopyrum tataricum Gaertn) by high performance liquid chromatography/photodiode array detector/linear ion trap FTICR hybrid mass spectrometry.

    PubMed

    Ren, Qiang; Wu, Caisheng; Ren, Yan; Zhang, Jinlan

    2013-02-15

    In recent years tartary buckwheat has become popular healthful food due to its antioxidant, antidiabetic and antitumor activities. However, its chemical constituents have not yet been fully characterized and identified. In this paper, a novel high performance liquid chromatography coupled with photodiode array detector and linear ion trap FTICR hybrid mass spectrometry (HPLC-PDA/LTQ-FTICRMS) method was established to characterize and identify a total of 36 compounds by a single run. The retention time, maximum UV absorption wavelength, accurate mass weight and characteristic fragment ions were collected on line. To confirm the structures, 11 compounds were isolated and identified by MS and NMR experiments. 1, 3, 6, 6'-tetra-feruloyl sucrose named taroside was a new phenlypropanoid glycoside, together with 3, 6-di-p-coumaroyl-1, 6'-di-feruloyl sucrose, 1, 6, 6'-tri-feruloyl-3-p-coumaroyl sucrose, N-trans-feruloyltyramine and quercetin-3-O-[β-D-xyloxyl-(1→2)-α-L-rhamnoside] were isolated for the first time from the Fagopyrum species. The research enriched the chemical information of tartary buckwheat.

  20. Study of EUV and x-ray radiation hardness of silicon photodiodes

    NASA Astrophysics Data System (ADS)

    Zabrodsky, Vladimir V.; Aruev, Pavel; Filimonov, Vladimir V.; Sobolev, Nikolay A.; Sherstnev, Evgeniy V.; Belik, Viktor P.; Nikolenko, Anton D.; Ivlyushkin, Denis V.; Pindyurin, Valery F.; Shadrin, Nikita S.; Soldatov, Artem E.; Mashkovtsev, Mikhail R.

    2013-05-01

    This work presents the results of long-term observation of the silicon photodiodes spatial profile response and the silicon photodiodes dark current after their exposure to 10.2 eV quanta and in the spectral range of 150-300 eV. Exposure of the photodiodes to quanta of an energy of 10.2 eV was repeated. Several other photodiodes have been irradiated in the spectral range of 700-1800 eV with a dose of 8 J/cm2. The spatial profile of the irradiated photodiodes was studied with 3.49 eV, 10.2 eV and 100 eV quanta. The effect of the recovery of the response spatial profile has been proved for the p+-n diode. An additional useful method of visualization of irradiated photodiode area is also presented.

  1. High-power flip-chip mounted photodiode array.

    PubMed

    Cross, Allen S; Zhou, Qiugui; Beling, Andreas; Fu, Yang; Campbell, Joe C

    2013-04-22

    Four-element modified uni-traveling-carrier (MUTC) photodiode arrays (PDA) flip-chip bonded onto transmission lines on AlN substrates are demonstrated. High RF output powers of 26.2 dBm and 21.0 dBm are achieved at 35 GHz and 48 GHz, respectively, using a PDA with 28-μm diameter photodiodes. A systematic comparison between a PDA with four 20 μm-diameter elements and a discrete detector with the same active area (40-μm diameter) is presented. The PDA achieved higher output power and thermal dissipation compared to its discrete counterpart.

  2. Some studies of avalanche photodiode readout of fast scintillators

    SciTech Connect

    Holl, I.; Lorenz, E.; Natkaniez, S.; Renker, D.; Schmelz, C. |; Schwartz, B.

    1995-08-01

    Photomultipliers (PMs) are the classical readout element for scintillation detectors in high energy particle physics, nuclear physics, medical physics, industrial radiation monitors etc. Here, large area avalanche photodiodes with high performance, narrow operation tolerances and high reliability have recently become available. The authors report on some tests of their performance in the readout of fast scintillators.

  3. Absolute light and resolution measurements for sensitive CsI(Tl)/photodiode detectors

    NASA Astrophysics Data System (ADS)

    Meier, Michael M.

    2003-01-01

    To conserve volume and power, photodiode/scintillator combinations are strong candidates for gamma-ray detection in space applications. High sensitivity to MeV gamma rays necessitates large-volume scintillators, which are most effectively read out with large-area photodiodes. However, because photodiodes have unity gain, the electronic noise limits resolution, and therefore small-area photodiodes that minimize capacitance are preferred. Thus, optimization of resolution involves maximizing light production and transport in the scintillator and light collection in the photodiode, while minimizing photodiode area. Measurements of performance are reported for 1×1×1cm3/10×10mm2, 80cm3/18×18mm2, and 85cm3/10×10mm2 CsI(Tl)/photodiode combinations. Each large scintillator was a single crystal, machined to a geometry that comprised a 40mm diameter × 50mm height cylindrical section that was extended through a 20°conical section to a square face that matched the respective photodiode sensitive surface. Absolute scales were estimated for the light output by measuring the photodiode responses to 241Am (59.54keV), 57Co (122.06 and 136.47keV), and 133Ba (80.99keV) and assuming a value of 3.67eV/electron-hole pair. The photodiode quantum efficiencies for the CsI(Tl) emission spectrum, corrected for Si reflection back into the scintillator, was taken to be 0.835. We obtained values of 58.2, 46.7, and 34.6 photons/keV for the combined light production and transport into the CsI for the 1cm3, ~80cm3, and ~85cm3 detectors, respectively. The best measured resolutions at 662keVfor the detectors were 5.9%, 7.2%, and 7.4% FWHM, respectively.

  4. Photodiode circuits for retinal prostheses.

    PubMed

    Loudin, J D; Cogan, S F; Mathieson, K; Sher, A; Palanker, D V

    2011-10-01

    Photodiode circuits show promise for the development of high-resolution retinal prostheses. While several of these systems have been constructed and some even implanted in humans, existing descriptions of the complex optoelectronic interaction between light, photodiode, and the electrode/electrolyte load are limited. This study examines this interaction in depth with theoretical calculations and experimental measurements. Actively biased photoconductive and passive photovoltaic circuits are investigated, with the photovoltaic circuits consisting of one or more diodes connected in series, and the photoconductive circuits consisting of a single diode in series with a pulsed bias voltage. Circuit behavior and charge injection levels were markedly different for platinum and sputtered iridium-oxide film (SIROF) electrodes. Photovoltaic circuits were able to deliver 0.038 mC/cm(2) (0.75 nC/phase) per photodiode with 50- μm platinum electrodes, and 0.54-mC/cm(2) (11 nC/phase) per photodiode with 50-μ m SIROF electrodes driven with 0.5-ms pulses of light at 25 Hz. The same pulses applied to photoconductive circuits with the same electrodes were able to deliver charge injections as high as 0.38 and 7.6 mC/cm(2) (7.5 and 150 nC/phase), respectively. We demonstrate photovoltaic stimulation of rabbit retina in-vitro, with 0.5-ms pulses of 905-nm light using peak irradiance of 1 mW/mm(2). Based on the experimental data, we derive electrochemical and optical safety limits for pixel density and charge injection in various circuits. While photoconductive circuits offer smaller pixels, photovoltaic systems do not require an external bias voltage. Both classes of circuits show promise for the development of high-resolution optoelectronic retinal prostheses.

  5. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    SciTech Connect

    Kaminski, Yelena; Shauly, Eitan; Paz, Yaron

    2015-12-07

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.

  6. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    NASA Astrophysics Data System (ADS)

    Kaminski, Yelena; Shauly, Eitan; Paz, Yaron

    2015-12-01

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.

  7. Ultraviolet avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    McClintock, Ryan; Razeghi, Manijeh

    2015-08-01

    The III-Nitride material system is rapidly maturing; having proved itself as a material for LEDs and laser, and now finding use in the area of UV photodetectors. However, many UV applications are still dominated by the use of photomultiplier tubes (PMT). PMTs are capable of obtaining very high sensitivity using internal electron multiplication gain (typically ~106). It is highly desirable to develop a compact semiconductor-based photodetector capable of realizing this level of sensitivity. In principle, this can be obtained in III-Nitrides by taking advantage of avalanche multiplication under high electric fields - typically 2.7 MV/cm, which with proper design can correspond to an external reverse bias of less than 100 volts. In this talk, we review the current state-of-the-art in III-Nitride solar- and visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE.

  8. Interference effects in reticon photodiode array detectors.

    PubMed

    Mount, G H; Sanders, R W; Brault, J W

    1992-03-01

    A detector system incorporating the Reticon RL1024S photodiode array has been constructed at the National Oceanic and Atmospheric Administration Aeronomy Laboratory as part of a double spectrograph to be used to study the Earth's atmosphere from ground-based and aircraft-based platforms. To determine accurately the abundances of atmospheric trace gases, this new system must be able to measure spectral absorptions as small as 0.02%. The detector, manufactured by EG&G Reticon, exhibits superior signal-to-noise characteristics at the light levels characteristic of scattered skylights, but interference in the passivating layer (a thin layer of SiO(2) that is deposited during the manufacture to protect the silicon active area from water vapor) causes major problems in achieving the required precision. The mechanism of the problems and the solution we have implemented are described in detail.

  9. Recent advances in organic photodiodes (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kippelen, Bernard; Khan, Talha M.; Fuentes-Hernandez, Canek; Diniz, Larissa; Lukens, Julia M.; Larrain, Felipe

    2016-09-01

    Although the detection of photons is ubiquitous, man-made photon detectors still limits the effectiveness of applications such as light/laser detection, photography, astronomy, quantum information science, medical imaging, microscopy, communications, and others. The performance of the technologically most advanced detectors based on CMOS semiconductor technology has improved during the last decades but at the detriment of increased complexity, higher cost, limited portability and compactness, and limited area. On the other hand, nature has produced a relatively simple detector with remarkable properties: the human eye. The exploration of new paradigms in photon detection using new material platforms might therefore provide a path to further challenge the frontiers of applications enabled by light. In this talk, we will report on the realization of solution-processed organic semiconductor visible spectrum photodetectors with a high specific detectivity above 1014 Jones, at least an order of magnitude larger than values found in photodiodes based on silicon. These detectors demonstrate a sub-pA current under reverse bias in the dark, making them suitable for detecting very low levels of light. The small dark current under reverse bias allows the characterization of these devices over 9 orders of magnitude of increasing light irradiance. The detectors are based on the device structure: tin-doped indium oxide / ethoxylated polyethylenimine / poly(3-hexylthiophene) : indene C60 bisadduct / molybdenum oxide / silver and present a path toward fabrication on flexible substrates. We will show that these detectors can operate over a large dynamic range in the self-powered photovoltaic mode where the light produces a photovoltage that can be measured directly without any external bias source. We believe that large-area flexible photodetectors with detectivity values comparable to or better than those displayed by silicon-based photodiodes will enable a wide variety of

  10. Avalanche photodiodes for anticoincidence detectors

    NASA Astrophysics Data System (ADS)

    Cirignano, Leonard J.; Farrell, Richard; Redus, Robert H.; Squillante, Michael R.; Hunter, Stanley D.; Cuddapah, Rajani; Mukherjee, Reshmi

    1996-10-01

    Anticoincidence detectors are required for a variety of satellite instruments, including high energy gamma-ray telescopes, in order to differentiate ambient background radiation from signals of interest. Presently, most anticoincidence systems use scintillators coupled to photomultiplier tubes. We have demonstrated that it is now possible to use very high gain solid state avalanche photodiodes (APDs) as photodetectors for this application. A single APD coupled to a 30 cm multiplied by 30 cm multiplied by 0.95 cm plastic scintillator tile demonstrated 100% detection efficiency for minimum ionizing particles, with a low false positive rate. Multiple APDs enhance the signal to noise ratio in addition to providing redundancy. Relative to PMTs, APDs are compact, low power, and mechanically robust devices. Ground test data of APDs for anticoincidence shields is presented.

  11. Organic photodiodes for biosensor miniaturization.

    PubMed

    Wojciechowski, Jason R; Shriver-Lake, Lisa C; Yamaguchi, Mariko Y; Füreder, Erwin; Pieler, Roland; Schamesberger, Martin; Winder, Christoph; Prall, Hans Jürgen; Sonnleitner, Max; Ligler, Frances S

    2009-05-01

    Biosensors have successfully demonstrated the capability to detect multiple pathogens simultaneously at very low levels. Miniaturization of biosensors is essential for use in the field or at the point of care. While microfluidic systems reduce the footprint for biochemical processing devices and electronic components are continually becoming smaller, optical components suitable for integration--such as LEDs and CMOS chips--are generally still too expensive for disposable components. This paper describes the integration of polymer diodes onto a biosensor chip to create a disposable device that includes both the detector and the sensing surface coated with immobilized capture antibody. We performed a chemiluminescence immunoassay on the OPD substrate and measured the results using a hand-held reader attached to a laptop computer. The miniaturized biosensor with the disposable slide including the organic photodiode detected Staphylococcal enterotoxin B at concentrations as low as 0.5 ng/mL.

  12. Note: Effect of photodiode aluminum cathode frame on spectral sensitivity in the soft x-ray energy band

    SciTech Connect

    McGarry, M. B. Den Hartog, D. J.; Goetz, J. A.; Johnson, J.; Franz, P.

    2014-09-15

    Silicon photodiodes used for soft x-ray detection typically have a thin metal electrode partially covering the active area of the photodiode, which subtly alters the spectral sensitivity of the photodiode. As a specific example, AXUV4BST photodiodes from International Radiation Detectors have a 1.0 μm thick aluminum frame covering 19% of the active area of the photodiode, which attenuates the measured x-ray signal below ∼6 keV. This effect has a small systematic impact on the electron temperature calculated from measurements of soft x-ray bremsstrahlung emission from a high-temperature plasma. Although the systematic error introduced by the aluminum frame is only a few percent in typical experimental conditions on the Madison Symmetric Torus, it may be more significant for other instruments that use similar detectors.

  13. PiN photodiode performance comparison for dosimetry in radiology applications.

    PubMed

    Oliveira, Charles N P; Khoury, Helen J; Santos, Edval J P

    2016-12-01

    Performance comparison of selected photodiodes for usage as radiation detectors for radio-protection is presented. In this study, based on the criteria of minimum sensitive area of 5mm(2), minimum half angle 60° and low cost, four commercial photodiodes are selected for evaluation: SFH205, SFH206, BPW34, and BPX90F. Photodiodes are low cost, small volume and lightweight detectors. As an electronic transducer, photodiode detector is an attractive approach for the development of low power portable electronic dosimeter for direct-reading real-time radiation dose measurement. The devices have been studied with respect to sensitivity (efficiency) in X-rays and gamma rays detection, repeatability and linearity in air kerma.

  14. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    NASA Astrophysics Data System (ADS)

    Duun, Sune; Haahr, Rasmus G.; Hansen, Ole; Birkelund, Karen; Thomsen, Erik V.

    2010-07-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized for minimizing the optical power needed in reflectance pulse oximetry. To simplify packaging, backside photodiodes are made which are compatible with assembly using surface mounting technology without pre-packaging. Quantum efficiencies up to 95% and area-specific noise equivalent powers down to 30 fW Hz-1/2 cm-1 are achieved. The photodiodes are incorporated into a wireless pulse oximetry sensor system embedded in an adhesive patch presented elsewhere as 'The Electronic Patch'. The annular photodiodes are fabricated using two masked diffusions of first boron and subsequently phosphor. The surface is passivated with a layer of silicon nitride also serving as an optical filter. As the final process, after metallization, a hole in the center of the photodiode is etched using deep reactive ion etch.

  15. Low latency, area, and energy efficient Hybrid Photonic Plasmonic on-chip Interconnects (HyPPI)

    NASA Astrophysics Data System (ADS)

    Sun, Shuai; Badaway, Abdel-Hameed A.; Narayana, Vikram; El-Ghazawi, Tarek; Sorger, Volker J.

    2016-03-01

    In this paper we benchmark various interconnect technologies including electrical, photonic, and plasmonic options. We contrast them with hybridizations where we consider plasmonics for active manipulation devices, and photonics for passive propagation integrated circuit elements, and further propose another novel hybrid link that utilizes an on chip laser for intrinsic modulation thus bypassing electro-optic modulation. Link benchmarking proves that hybridization can overcome the shortcomings of both pure photonic and plasmonic links. We show superiority in a variety of performance parameters such as point-to-point latency, energy efficiency, capacity, ability to support wavelength division multiplexing, crosstalk coupling length, bit flow density and Capability-to-Latency-Energy-Area Ratio.

  16. Polarization switch of four-wave mixing in large mode area hybrid photonic crystal fibers.

    PubMed

    Petersen, Sidsel R; Alkeskjold, Thomas T; Olausson, Christina B; Lægsgaard, Jesper

    2015-02-15

    Degenerate spontaneous four-wave mixing is considered in a large mode area hybrid photonic crystal fiber. Numerical and experimental results show birefringence assisted four-wave mixing for a certain polarization state of the pump field. The parametric gain can be turned on and off by switching the polarization state of the pump field between the two principal axis of the hybrid photonic crystal fiber.

  17. Scholarly Communication and Network Influences in the Hybrid Problem Area of Developmental Dyslexia.

    ERIC Educational Resources Information Center

    Perry, Claudia A.; Rice, Ronald E.

    1996-01-01

    A scientific communication model of the emergence of a hybrid research area was tested on 74 researchers in the field of developmental dyslexia. Results show support for a model of Mulkay's model branching instead of Kuhn's model of scientific revolution; evidence points to divergence rather than convergence among the related research areas.…

  18. Reduction of Photodiode Nonlinearities by Adaptive Biasing

    DTIC Science & Technology

    2016-10-14

    NONLINEARITY In principle, the photodiode is a linear device. That is, each incident photon has a high probability of creating an electron- hole pair in...that the photodiode efficiently harvests electron- hole pairs created by ab- sorbed photons.1 For a given incident optical signal, the carrier pairs...1.9GHz (dashed colors). For comparison, the RF powers were scaled for variations in current, and the lower power tones were shifted by 37.9 dBm. A black

  19. A protected area influences genotype-specific survival and the structure of a Canis hybrid zone.

    PubMed

    Benson, John F; Patterson, Brent R; Mahoney, Peter J

    2014-02-01

    It is widely recognized that protected areas can strongly influence ecological systems and that hybridization is an important conservation issue. However, previous studies have not explicitly considered the influence of protected areas on hybridization dynamics. Eastern wolves are a species of special concern and their distribution is largely restricted to a protected population in Algonquin Provincial Park (APP), Ontario, Canada, where they are the numerically dominant canid. We studied intrinsic and extrinsic factors influencing survival and cause-specific mortality of hybrid and parental canids in the three-species hybrid zone between eastern wolves, eastern coyotes, and gray wolves in and adjacent to APP. Mortality risk for eastern wolves in areas adjacent to APP was significantly higher than for other sympatric Canis types outside of APP, and for eastern wolves and other canids within APP. Outside of APP, the annual mortality rate of all canids by harvest (24%) was higher than for other causes of death (4-7%). Furthermore, eastern wolves (hazard ratio = 3.5) and nonresidents (transients and dispersing animals, hazard ratio = 2.7) were more likely to die from harvest relative to other Canis types and residents, respectively. Thus, eastern wolves dispersing from APP were especially vulnerable to harvest mortality. For residents, eastern wolf survival was more negatively influenced by increased road density than for other Canis types, further highlighting the sensitivity of eastern wolves to human disturbance. A cycle of dispersal from APP followed by high rates of mortality and hybridization appears to maintain eastern wolves at low density adjacent to APP, limiting the potential for expansion beyond the protected area. However, high survival and numerical dominance of eastern wolves within APP suggest that protected areas can allow rare hybridizing species to persist even if their demographic performance is compromised and barriers to hybridization are largely

  20. Photodiode-Based, Passive Ultraviolet Dosimeters

    NASA Technical Reports Server (NTRS)

    Vaughn, Jason A.; Gray, Perry

    2004-01-01

    Simple, passive instruments have been developed for measuring the exposure of material specimens to vacuum ultraviolet (VUV) radiation from the Sun. Each instrument contains a silicon photodiode and a coulometer. The photocharge generated in the photodiode is stored in the coulometer. The accumulated electric charge measured by use of the coulometer is assumed to be proportional to the cumulative dose of VUV radiation expressed in such convenient units as equivalent Sun hours (ESH) [defined as the number of hours of exposure to sunlight at normal incidence]. Intended originally for use aboard spacecraft, these instruments could also be adapted to such terrestrial uses as monitoring the curing of ultraviolet-curable epoxies. Each instrument includes a photodiode and a coulometer assembly mounted on an interface plate (see figure). The photodiode assembly includes an aluminum housing that holds the photodiode, a poly(tetrafluoroehylene) cosine receptor, and a narrow-band optical filter. The cosine receptor ensures that the angular response of the instrument approximates the ideal angular response (proportional to the cosine of the angle of incidence). The filter is chosen to pass the ultraviolet wavelength of interest in a specific experiment. The photodiode is electrically connected to the coulometer. The factor of proportionality between the charge stored in the coulometer and ultraviolet dosage (in units of ESH) is established, prior to use, in calibration experiments that involve the use of lamps and current sources traceable to the National Institute of Standards and Technology.

  1. Integrating an electrically active colloidal quantum dot photodiode with a graphene phototransistor

    PubMed Central

    Nikitskiy, Ivan; Goossens, Stijn; Kufer, Dominik; Lasanta, Tania; Navickaite, Gabriele; Koppens, Frank H. L.; Konstantatos, Gerasimos

    2016-01-01

    The realization of low-cost photodetectors with high sensitivity, high quantum efficiency, high gain and fast photoresponse in the visible and short-wave infrared remains one of the challenges in optoelectronics. Two classes of photodetectors that have been developed are photodiodes and phototransistors, each of them with specific drawbacks. Here we merge both types into a hybrid photodetector device by integrating a colloidal quantum dot photodiode atop a graphene phototransistor. Our hybrid detector overcomes the limitations of a phototransistor in terms of speed, quantum efficiency and linear dynamic range. We report quantum efficiencies in excess of 70%, gain of 105 and linear dynamic range of 110 dB and 3 dB bandwidth of 1.5 kHz. This constitutes a demonstration of an optoelectronically active device integrated directly atop graphene and paves the way towards a generation of flexible highly performing hybrid two-dimensional (2D)/0D optoelectronics. PMID:27311710

  2. Heterogeneously integrated waveguide-coupled photodiodes on silicon-on-diamond (SOD)

    NASA Astrophysics Data System (ADS)

    Xie, Xiaojun; Ramaswamy, Anand; Shen, Yang; Yang, Zhanyu; Jacob-Mitos, Matt; Wang, Ye; Zang, Jizhao; Norberg, Erik; Fish, Greg; Campbell, Joe C.; Beling, Andreas

    2016-09-01

    We report on InP-based high power modified uni-traveling carrier (MUTC) photodiodes heterogeneously integrated on silicon on diamond (SOD) waveguides. Typical dark currents of MUTC photodiodes on SOD waveguides are 20 nA at - 5 V bias voltage. A 50-μm long photodiode has an internal responsivity of 1.07 A/W at 1550 nm wavelength. The bandwidths of photodiodes with active areas of 14×25 μm2, 14×50 μm2, 14×100 μm2 and 14×150 μm2 are 22 GHz, 16 GHz, 10 GHz and 7 GHz, respectively. The maximum output RF powers of 14×100 μm2 photodiodes are 13 dBm, 14.4 dBm and 15.3 dBm at 10 GHz, respectively. The maximum DC dissipated power is 0.67 W. To our knowledge, this is the first demonstration of III-V photodiodes integrated on SOD waveguides.

  3. Silicon photodiode characterization from 1 eV to 10 keV

    SciTech Connect

    Idzorek, G.C.; Bartlett, R.J.

    1997-10-01

    Silicon photodiodes offer a number of advantages over conventional photocathode type soft x-ray detectors in pulsed power experiments. These include a nominally flat response, insensitivity to surface contamination, low voltage biasing requirements, sensitivity to low energy photons, excellent detector to detector response reproducibility, and ability to operate in poor vacuum or gas backfilled experiments. Silicon photodiodes available from International Radiation Detectors (IRD), Torrance, California have been characterized for absolute photon response from 1 eV to 10 keV photon energy, time response, and signal saturation levels. The authors have assembled individually filtered photodiodes into an array designated the XUV-7. The XUV-7 provides seven photodiodes in a vacuum leak tight, electrically isolated, low noise, high bandwidth, x-ray filtered assembly in a compact package with a 3.7 cm outside diameter. In addition they have assembled the diodes in other custom configurations as detectors for spectrometers. Their calibration measurements show factor of ten deviations from the silicon photodiode theoretical flat response due to diode sensitivity outside the center `sensitive area`. Detector response reproducibility between diodes appears to be better than 5%. Time response measurements show a 10-90% rise time of about 0.1 nanoseconds and a fall time of about 0.5 nanoseconds. Silicon photodiodes have proven to be a versatile and useful complement to the standard photocathode detectors for soft x-ray measurement and are very competitive with diamond for a number of applications.

  4. Transparent organic photodiodes stacked with electroluminescence devices

    NASA Astrophysics Data System (ADS)

    Komatsu, Takahiro; Sakanoue, Kei; Fujita, Katsuhiko; Tsutsui, Tetsuo

    2005-10-01

    Stacked devices that consisted of transparent organic photodiodes (TOPDs) and organic electroluminescence devices (OELs) were demonstrated. TOPDs were prepared by poly-(2-methoxy-5- (2'-ethylhexyloxy)-1,4-phenylene vinylene (MEH-PPV) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) blend films as an active layer and transparent Au cathode (10 nm thick). These TOPDs showed about 45 % transmittance on average in visible light region (380-780 nm) and good correlation between incident light intensity and output photocurrent. Based on these results, the stacked devices were prepared by introducing OELs on TOPDs through a SiO insulating layer. The structure of OELs was ITO/Carbon/TPD/Alq3/LiF/Al. These stacked devices work as light emitting devices and also photo diodes. Since TOPDs have transparency, OELs can illuminate a paper put on the glass substrate through TOPDs and TOPDs can receive reflective light from the paper. Although the TOPDs also absorb light from OELs directly, the output signals from TOPDs changed according to the black and white pattern of the paper. These results show that the devices act as an image sensor having light emitting layer and light receiving layer in a same area.

  5. Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications

    NASA Astrophysics Data System (ADS)

    Razeghi, M.; Bayram, C.

    2009-05-01

    Numerous applications in scientific, medical, and military areas demand robust, compact, sensitive, and fast ultraviolet (UV) detection. Our (Al)GaN photodiodes pose high avalanche gain and single-photon detection efficiency that can measure up to these requirements. Inherit advantage of back-illumination in our devices offers an easier integration and layout packaging via flip-chip hybridization for UV focal plane arrays that may find uses from space applications to hostile-agent detection. Thanks to the recent (Al)GaN material optimization, III-Nitrides, known to have fast carrier dynamics and short relaxation times, are employed in (Al)GaN based superlattices that absorb in near-infrared regime. In this work, we explain the origins of our high performance UV APDs, and employ our (Al)GaN material knowledge for intersubband applications. We also discuss the extension of this material engineering into the far infrared, and even the terahertz (THz) region.

  6. Scholarly Communication in Developmental Dyslexia: Influence of Network Structure on Change in a Hybrid Problem Area.

    ERIC Educational Resources Information Center

    Perry, Claudia A.; Rice, Ronald E.

    1998-01-01

    Based on Mulkay's and Kuhn's models of change in scientific structure, a scientific communication model of the emergence of a hybrid research area was developed and tested in the field of developmental dyslexia; 74 researchers were partitioned into "blocks" of similar scientists. Results show support for Mulkay's model of branching…

  7. Hybrid lidar radar receiver for underwater imaging applications

    NASA Astrophysics Data System (ADS)

    Seetamraju, Madhavi; Gurjar, Rajan; Squillante, Michael; Derderian, Jeffrey P.

    2009-05-01

    In this work, we present research performed to improve the receiver characteristics for underwater imaging applications using the hybrid lidar-radar detection technique. We report the development of the next-generation coherent heterodyne receiver using modulation of the optical receiver's amplifier gain. Significant advantages in the receiver specifications are achieved using a large-area, high gain, low-noise silicon avalanche photodiode (APD) as the photodetector cum frequency mixer-demodulator. We demonstrate that heterodyne detection by gain modulation of APD can be used to increase the signal-to-noise ratio, detection sensitivity and bandwidth for the hybrid receiver system.

  8. Vertical Isolation for Photodiodes in CMOS Imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata

    2008-01-01

    In a proposed improvement in complementary metal oxide/semi conduct - or (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/semiconductor field-effect transistors (MOSFETs) and the photodiode of the pixel. This improvement is expected to enable separate optimization of the designs of the photodiode and the MOSFETs so as to optimize their performances independently of each other. The purpose to be served by enabling this separate optimization is to eliminate or vastly reduce diffusion cross-talk, thereby increasing sensitivity, effective spatial resolution, and color fidelity while reducing noise.

  9. Multichannel intensified photodiode for near infrared single photon detection

    NASA Astrophysics Data System (ADS)

    Aebi, Verle W.; Sykora, Derek F.; Jurkovic, Michael J.; Costello, Kenneth A.

    2011-05-01

    An overview of the Intensified Photodiode (IPD) is presented with an emphasis on IPDs optimized for use in the 950nm to 1350nm spectral range for single photon detection applications. The theory of operation of the IPD, two different electron optics designs, and device performance for a multichannel, 4x4 pixel array, low jitter IPD optimized for operation at 1060nm are presented in this paper. Key results include greater than 15% quantum efficiency, large active area, and less than 550ps impulse response.

  10. Photon counting modules using RCA silicon avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Lightstone, Alexander W.; Macgregor, Andrew D.; Macsween, Darlene E.; Mcintyre, Robert J.; Trottier, Claude; Webb, Paul P.

    1989-01-01

    Avalanche photodiodes (APD) are excellent small area, solid state detectors for photon counting. Performance possibilities include: photon detection efficiency in excess of 50 percent; wavelength response from 400 to 1000 nm; count rate to 10 (exp 7) counts per sec; afterpulsing at negligible levels; timing resolution better than 1 ns. Unfortunately, these performance levels are not simultaneously available in a single detector amplifier configuration. By considering theoretical performance predictions and previous and new measurements of APD performance, the anticipated performance of a range of proposed APD-based photon counting modules is derived.

  11. Effect of temperature on silicon PIN photodiode radiation detectors

    NASA Astrophysics Data System (ADS)

    Kim, Han Soo; Jeong, Manhee; Kim, Young Soo; Ha, Jang Ho; Cho, Seong Yeon

    2014-03-01

    One of the noise sources of a semiconductor radiation detector is thermal noise, which degrades the performance, such as the energy resolution and unexpected random pulse signals. In this study, PIN photodiode radiation detectors, with different active areas were designed and fabricated for an experimental comparison of the energy resolutions for different temperatures and capacitances by using a Ba-133 calibration gamma-ray source. The experimental temperature was approximately in the range from -7 to 24 °C and was controlled by using a peltier device. The design considerations and the electrical characteristics, such as the I-V and the C-V characteristics, are also addressed.

  12. Organic light detectors: photodiodes and phototransistors.

    PubMed

    Baeg, Kang-Jun; Binda, Maddalena; Natali, Dario; Caironi, Mario; Noh, Yong-Young

    2013-08-21

    While organic electronics is mostly dominated by light-emitting diodes, photovoltaic cells and transistors, optoelectronics properties peculiar to organic semiconductors make them interesting candidates for the development of innovative and disruptive applications also in the field of light signal detection. In fact, organic-based photoactive media combine effective light absorption in the region of the spectrum from ultraviolet to near-infrared with good photogeneration yield and low-temperature processability over large areas and on virtually every substrate, which might enable innovative optoelectronic systems to be targeted for instance in the field of imaging, optical communications or biomedical sensing. In this review, after a brief resume of photogeneration basics and of devices operation mechanisms, we offer a broad overview of recent progress in the field, focusing on photodiodes and phototransistors. As to the former device category, very interesting values for figures of merit such as photoconversion efficiency, speed and minimum detectable signal level have been attained, and even though the simultaneous optimization of all these relevant parameters is demonstrated in a limited number of papers, real applications are within reach for this technology, as it is testified by the increasing number of realizations going beyond the single-device level and tackling more complex optoelectronic systems. As to phototransistors, a more recent subject of study in the framework of organic electronics, despite a broad distribution in the reported performances, best photoresponsivities outperform amorphous silicon-based devices. This suggests that organic phototransistors have a large potential to be used in a variety of optoelectronic peculiar applications, such as a photo-sensor, opto-isolator, image sensor, optically controlled phase shifter, and opto-electronic switch and memory.

  13. Current isolating epitaxial buffer layers for high voltage photodiode array

    DOEpatents

    Morse, Jeffrey D.; Cooper, Gregory A.

    2002-01-01

    An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

  14. Sustainable electricity generation by solar pv/diesel hybrid system without storage for off grids areas

    NASA Astrophysics Data System (ADS)

    Azoumah, Y.; Yamegueu, D.; Py, X.

    2012-02-01

    Access to energy is known as a key issue for poverty reduction. The electrification rate of sub Saharan countries is one of the lowest among the developing countries. However this part of the world has natural energy resources that could help raising its access to energy, then its economic development. An original "flexy energy" concept of hybrid solar pv/diesel/biofuel power plant, without battery storage, is developed in order to not only make access to energy possible for rural and peri-urban populations in Africa (by reducing the electricity generation cost) but also to make the electricity production sustainable in these areas. Some experimental results conducted on this concept prototype show that the sizing of a pv/diesel hybrid system by taking into account the solar radiation and the load/demand profile of a typical area may lead the diesel generator to operate near its optimal point (70-90 % of its nominal power). Results also show that for a reliability of a PV/diesel hybrid system, the rated power of the diesel generator should be equal to the peak load. By the way, it has been verified through this study that the functioning of a pv/Diesel hybrid system is efficient for higher load and higher solar radiation.

  15. MRS photodiode in strong magnetic field

    SciTech Connect

    Beznosko, D.; Blazey, G.; Dyshkant, A.; Francis, K.; Kubik, D.; Rykalin, V.; Tartaglia, M.A.; Zutshi, v.; /Northern Illinois U.

    2004-12-01

    The experimental results on the performance of the MRS (Metal/Resistor/Semiconductor) photodiode in the strong magnetic field of 4.4T, and the possible impact of the quench of the magnet at 4.5T on sensor's operation are reported.

  16. Optical Demonstrations with a Scanning Photodiode Array.

    ERIC Educational Resources Information Center

    Turman, Bobby N.

    1980-01-01

    Describes the photodiode array and the electrical connections necessary for it. Also shows a few of the optical demonstration possibilities-shadowgraphs for measuring small objects, interference and diffraction effects, angular resolution of an optical system, and a simple spectrometer. (Author/DS)

  17. Fabrication and characterization of Au/n-Si photodiode with lithium as back-surface-field

    NASA Astrophysics Data System (ADS)

    Keffous, A.; Zitouni, M.; Belkacem, Y.; Menari, H.; Chergui, W.

    2002-10-01

    In this work, we present a design and characterization of Schottky barrier Au/n-Si/Li based UV-VIS photodiode for application, such as solar UV monitoring, flame sensors and UV astronomy. The Schottky photodiode was realized with a thin layer of gold (Au) at the front side of high purity n-type silicon and lithium (Li) on the back side as back-surface-field (Li-BSF). The Li-BSF used was a new method which allow us to modulate and choice the depletion width. I- V characteristic, capacitance and spectral response were performed, the results were found in agreement with those determined by simulation method. A quantum efficiency (QE) of 47% at about 550 nm wavelength was obtained using only a thin gold layer as sensitive area. The thickness of gold used on the photodiode was around 125 Å, where 58% of light transmission was carried out.

  18. Silicon photodiode soft x-ray detectors for pulsed power experiments

    SciTech Connect

    Idzorek, G.C.; Bartlett, R.J.

    1997-10-01

    Silicon photodiodes offer a number of advantages over conventional photocathode type soft x-ray detectors in pulsed power experiments. These include a nominally flat response, insensitivity to surface contamination, low voltage biasing requirements, sensitivity to low energy photons, excellent detector to detector response reproducibility, and ability to operate in poor vacuum or gas backfilled experiments. Silicon photodiodes available from International Radiation Detectors (IRD), Torrance, California have been characterized for absolute photon response from 1 eV to 10 keV photon energy, time response, and signal saturation levels. The authors calibration measurements show factor of ten deviations from the silicon photodiode theoretical flat response due to diode sensitivity outside the center `sensitive area`. Detector response reproducibility between diodes appears to be better than 5%. Time response measurements show a 10-90% rise time of about 0.1 nanoseconds and a fall time of about 0.5 nanoseconds.

  19. Large-Format AlGaN PIN Photodiode Arrays for UV Images

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Franz, David

    2010-01-01

    A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

  20. Improved Photoresponse of Hybrid ZnO/P3HT Bilayered Photodetector Obtained Through Oriented Growth of ZnO Nanorod Arrays and the Use of Hole Injection Layer

    NASA Astrophysics Data System (ADS)

    Bilgaiyan, Anubha; Dixit, Tejendra; Palani, I. A.; Singh, Vipul

    2015-08-01

    We report highly oriented one-dimensional (1-D) growth of zinc oxide (ZnO) nanorod arrays (NRA) which were later utilized to fabricate hybrid photodiodes having the typical photodiode configuration of indium tin oxide (ITO)/ZnO/poly(3-hexylthiophene) (P3HT)/Ag. These functional hybrid bilayered photodiodes were found to have high rectification ratio under dark conditions and demonstrated enhanced responsivity under light illumination. Further, we studied the effect of an intermediate electron blocking layer of poly(ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) on the photodiode characteristics and demonstrated ITO/ZnO/P3HT/PEDOT:PSS/Ag photodiodes, reporting very high rectification ratio and responsivity in this bilayered configuration. The observed results are explained on the basis of the increased surface area of contact between the ZnO nanorods and the P3HT, and also the efficient hole injection into the P3HT layer from the top Ag electrode.

  1. High Performance Photodiode Based on p-Si/Copper Phthalocyanine Heterojunction.

    PubMed

    Zhong, Junkang; Peng, Yingquan; Zheng, Tingcai; Lv, Wenli; Ren, Qiang; Fobao, Huang; Ying, Wang; Chen, Zhen; Tang, Ying

    2016-06-01

    Hybrid organic-inorganic (HOI) photodiodes have both advantages of organic and inorganic materials, including compatibility of traditional Si-based semiconductor technology, low cost, high photosensitivity and high reliability, showing tremendous value in application. Red light sensitive HOI photodiodes based on the p-Si/copper phthalocyanine (CuPc) hetrojunction were fabricated and characterized. The effects of CuPc layer thickness on the performance were investigated, and an optimal layer thickness of around 30 nm was determined. An analytical expression is derived to describe the measured thickness dependence of the saturation photocurrent. For the device with optimal CuPc layer thickness, a photoresponsivity of 0.35 A/W and external quantum efficiency of 70% were obtained at 9 V reverse voltage bias and 655 nm light illumination of 0.451 mW. Furthermore, optical power dependent performances were investigated.

  2. Study of hybrid power system potential to power agricultural water pump in mountain area

    NASA Astrophysics Data System (ADS)

    Syuhada, Ahmad; Mubarak, Amir Zaki; Maulana, M. Ilham

    2016-03-01

    As industry and Indonesian economy grow fast, there are a lot of agricultural land has changed into housing and industrial land. This causes the agricultural land moves to mountain area. In mountainous agricultural area, farmers use the water resources of small rivers in the groove of the mountain to irrigate the farmland. Farmers use their power to lift up water from the river to their land which causes inefectivity in the work of the farmers. Farmers who have capital utilize pump to raise water to their land. The only way to use pump in mountain area is by using fuel energy as there is no electricity, and the fuel price in mountain area is very expensive. Based on those reasons it is wise to consider the exploration of renewable energy available in the area such as solar energy, wind energy and hybrid energy. This study analyses the potential of the application of hybrid power plant, which is the combination of solar and wind energy, to power agricultural pump. In this research, the data of wind speed and solar radiation are collected from the measurement of BMKG SMPK Plus Sare. Related to the solar energy, the photovoltaic output power calculation is 193 W with duration of irradiation of 5 hours/day. While for the wind energy, the output power of the wind turbine is 459.84 W with blade diameter of 3 m and blow duration of 7 hours/day. The power of the pump is 558 W with 8 hours of usage, and the water capacity is 2.520 liters/hour for farmland with the area of 15 ha. Based on the analysis result, the designed system will generate electricity of 3.210 kW/year with initial investment of US 14,938.

  3. Silicon photodiode as the two-color detector

    NASA Astrophysics Data System (ADS)

    Ponomarev, D. B.; Zakharenko, V. A.

    2015-11-01

    This paper describes a silicon photodiode as the two-color photodetector. The work of one photodiode in two spectral ranges is achieved due to the changes of the spectral sensitivity of the photodiodes in the transition from photodiode mode for photovoltaic in the short circuit mode. On the basis of silicon photodiode FD-256 the layout of the spectral ratio pyrometer was assembled and the results of theoretical calculations was confirmed experimentally. The calculated dependences of the coefficient of error of the spectral ratio pyrometer from temperature reverse voltage 10 and 100 V was presented. The calculated dependence of the instrumental error and the assessment of methodological errors of the proposed photodetector spectral ratio was done. According to the results of the presented research was set the task of development photodiode detectors which change the spectral sensitivity depending on the applied voltage.

  4. Silicon photodiodes with high photoconductive gain at room temperature.

    PubMed

    Li, X; Carey, J E; Sickler, J W; Pralle, M U; Palsule, C; Vineis, C J

    2012-02-27

    Silicon photodiodes with high photoconductive gain are demonstrated. The photodiodes are fabricated in a complementary metal-oxide-semiconductor (CMOS)-compatible process. The typical room temperature responsivity at 940 nm is >20 A/W and the dark current density is ≈ 100 nA/cm2 at 5 V reverse bias, yielding a detectivity of ≈ 10(14) Jones. These photodiodes are good candidates for applications that require high detection sensitivity and low bias operation.

  5. Nano-multiplication region avalanche photodiodes and arrays

    NASA Technical Reports Server (NTRS)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

    2011-01-01

    An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

  6. Degenerate four wave mixing in large mode area hybrid photonic crystal fibers.

    PubMed

    Petersen, Sidsel R; Alkeskjold, Thomas T; Lægsgaard, Jesper

    2013-07-29

    Spontaneous degenerate four wave mixing (FWM) is investigated in large mode area hybrid photonic crystal fibers, in which photonic bandgap guidance and index guidance is combined. Calculations show the parametric gain is maximum on the edge of a photonic bandgap, for a large range of pump wavelengths. The FWM products are observed on the edges of a transmission band experimentally, in good agreement with the numerical results. Thereby the bandedges can be used to control the spectral positions of FWM products through a proper fiber design. The parametric gain control combined with a large mode area fiber design potentially allows for power scaling of light at wavelengths not easily accessible with e.g. rare earth ions.

  7. High resolution, low energy avalanche photodiode X-ray detectors

    NASA Technical Reports Server (NTRS)

    Farrell, R.; Vanderpuye, K.; Entine, G.; Squillante, M. R.

    1991-01-01

    Silicon avalanche photodiodes have been fabricated, and their performance as X-ray detectors has been measured. Photon sensitivity and energy resolution were measured as a function of size and operating parameters. Noise thresholds as low as 212 eV were obtained at room temperature, and backscatter X-ray fluorescence data were obtained for aluminum and other light elements. It is concluded that the results with the X-ray detector are extremely encouraging, and the performance is challenging the best available proportional counters. While not at the performance level of either cryogenic silicon or HgI2, these device operate at room temperature and can be reproduced in large numbers and with much larger areas than typically achieved with HgI2. In addition, they are rugged and appear to be indefinitely stable.

  8. Feedback in close-coupled axial VCSEL-photodiode pairs

    NASA Astrophysics Data System (ADS)

    Geib, Kent M.; Serkland, Darwin K.; Peake, Gregory M.; Sanchez, Victoria M.

    2011-03-01

    We have been investigating the use of coaxial multimode VCSEL/PD (vertical cavity surface emitting laser/photodiode) pairs for positional sensing with emitter to target mirror distances on the order of 1mm. We have observed large variations in signal levels due to the strong optical feedback in these close-coupled systems, employing either heterogeneously integrated commercial components or our own monolithically integrated devices. The feedback effect is larger than anticipated due to the annular geometry of the photodetector. Even though there is very little change in the measured VCSEL total output power, the optical feedback induces variations in the transverse mode distributions in these multimode VCSELs. The higher order modes have a larger divergence angle resulting in changes in the reflected light power incident upon the active detector area for a large range of emitter/mirror separations. We will review the experimental details and provide strategies for avoiding these variations in detected power.

  9. Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

    NASA Astrophysics Data System (ADS)

    Juntunen, Mikko A.; Heinonen, Juha; Vähänissi, Ville; Repo, Päivikki; Valluru, Dileep; Savin, Hele

    2016-12-01

    Ideal photodiodes can detect all incoming photons independently of the wavelength, angle or intensity of the incident light. Present-day photodiodes notably suffer from optical losses and generated charge carriers are often lost via recombination. Here, we demonstrate a device with an external quantum efficiency above 96% over the wavelength range 250-950 nm. Instead of a conventional p-n junction, we use negatively charged alumina to form an inversion layer that generates a collecting junction extending to a depth of 30 µm in n-type silicon with bulk resistivity larger than 10 kΩ cm. We enhance the collection efficiency further by nanostructuring the photodiode surface, which results in higher effective charge density and increased charge-carrier concentration in the inversion layer. Additionally, nanostructuring and efficient surface passivation allow for a reliable device response with incident angles up to 70°. We expect the considered device to improve data quality, reduce the area of photodiodes as well as decrease the cost per pixel.

  10. Cooled avalanche photodiode used for photon detection

    NASA Technical Reports Server (NTRS)

    Robinson, Deborah L.; Metscher, Brian D.

    1987-01-01

    Commercial avalanche photodiodes have been operated as single-photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5 to 3 times more sensitive than presently-available photomultiplier tubes (PPMTs). Both single-photon detection probability and detector noise increase with bias voltage; detection probabilities greater than 25 percent were obtained with detector noise levels comparable to the noise of a PMT; higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.

  11. Photon detection with cooled avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Robinson, D. L.; Metscher, B. D.

    1987-01-01

    Commercial avalanche photodiodes have been operated as single-photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5-3 times more sensitive than presently available photomultiplier tubes (PMTs). Both single-photon detection probability and detector noise increase with bias voltage; detection probabilities greater than twice that of a PMT were obtained with detector noise levels below 100 counts per second. Higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.

  12. Avalanche Photodiode Arrays for Optical Communications Receivers

    NASA Technical Reports Server (NTRS)

    Srinivasan, M.; Vilnrotter, V.

    2001-01-01

    An avalanche photodiode (APD) array for ground-based optical communications receivers is investigated for the reception of optical signals through the turbulent atmosphere. Kolmogorov phase screen simulations are used to generate realistic spatial distributions of the received optical field. It is shown that use of an APD array for pulse-position modulation detection can improve performance by up to 4 dB over single APD detection in the presence of turbulence, but that photon-counting detector arrays yield even greater gains.

  13. Large-area, freestanding, single-layer graphene-gold: a hybrid plasmonic nanostructure.

    PubMed

    Iyer, Ganjigunte R Swathi; Wang, Jian; Wells, Garth; Guruvenket, Srinivasan; Payne, Scott; Bradley, Michael; Borondics, Ferenc

    2014-06-24

    Graphene-based plasmonic devices have recently drawn great attention. However, practical limitations in fabrication and device architectures prevent studies from being carried out on the intrinsic properties of graphene and their change by plasmonic structures. The influence of a quasi-infinite object (i.e., the substrate) on graphene, being a single sheet of carbon atoms, and the plasmonic device is overwhelming. To address this and put the intrinsic properties of the graphene-plasmonic nanostructures in focus, we fabricate large-area, freestanding, single-layer graphene-gold (LFG-Au) sandwich structures and Au nanoparticle decorated graphene (formed via thermal treatment) hybrid plasmonic nanostructures. We observed two distinct plasmonic enhancement routes of graphene unique to each structure via surface-enhanced Raman spectroscopy. The localized electronic structure variation in the LFG due to graphene-Au interaction at the nanoscale is mapped using scanning transmission X-ray microscopy. The measurements show an optical density of ∼0.007, which is the smallest experimentally determined for single-layer graphene thus far. Our results on freestanding graphene-Au plasmonic structures provide great insight for the rational design and future fabrication of graphene plasmonic hybrid nanostructures.

  14. Comparative study of fuel cell, battery and hybrid buses for renewable energy constrained areas

    NASA Astrophysics Data System (ADS)

    Stempien, J. P.; Chan, S. H.

    2017-02-01

    Fuel cell- and battery-based public bus technologies are reviewed and compared for application in tropical urban areas. This paper scrutinizes the reported literature on fuel cell bus, fuel cell electric bus, battery electric bus, hybrid electric bus, internal combustion diesel bus and compressed natural gas bus. The comparison includes the capital and operating costs, fuel consumption and fuel cycle emissions. To the best of authors knowledge, this is the first study to holistically compare hydrogen and battery powered buses, which is the original contribution of this paper. Moreover, this is the first study to focus on supplying hydrogen and electricity from fossil resources, while including the associated emissions. The study shows that compressed natural gas and hybrid electric buses appear to be the cheapest options in terms of total cost of ownership, but they are unable to meet the EURO VI emissions' standard requirement. Only fuel cell based buses have the potential to achieve the emissions' standard when the fuel cycle based on fossil energy was considered. Fuel cell electric buses are identified as a technology allowing for the largest CO2 emission reduction, making ∼61% decrease in annual emissions possible.

  15. Pure crystal orientation and anisotropic charge transport in large-area hybrid perovskite films

    PubMed Central

    Cho, Namchul; Li, Feng; Turedi, Bekir; Sinatra, Lutfan; Sarmah, Smritakshi P.; Parida, Manas R.; Saidaminov, Makhsud I.; Murali, Banavoth; Burlakov, Victor M.; Goriely, Alain; Mohammed, Omar F.; Wu, Tom; Bakr, Osman M.

    2016-01-01

    Controlling crystal orientations and macroscopic morphology is vital to develop the electronic properties of hybrid perovskites. Here we show that a large-area, orientationally pure crystalline (OPC) methylammonium lead iodide (MAPbI3) hybrid perovskite film can be fabricated using a thermal-gradient-assisted directional crystallization method that relies on the sharp liquid-to-solid transition of MAPbI3 from ionic liquid solution. We find that the OPC films spontaneously form periodic microarrays that are distinguishable from general polycrystalline perovskite materials in terms of their crystal orientation, film morphology and electronic properties. X-ray diffraction patterns reveal that the film is strongly oriented in the (112) and (200) planes parallel to the substrate. This film is structurally confined by directional crystal growth, inducing intense anisotropy in charge transport. In addition, the low trap-state density (7.9 × 1013 cm−3) leads to strong amplified stimulated emission. This ability to control crystal orientation and morphology could be widely adopted in optoelectronic devices. PMID:27830694

  16. Pure crystal orientation and anisotropic charge transport in large-area hybrid perovskite films

    NASA Astrophysics Data System (ADS)

    Cho, Namchul; Li, Feng; Turedi, Bekir; Sinatra, Lutfan; Sarmah, Smritakshi P.; Parida, Manas R.; Saidaminov, Makhsud I.; Murali, Banavoth; Burlakov, Victor M.; Goriely, Alain; Mohammed, Omar F.; Wu, Tom; Bakr, Osman M.

    2016-11-01

    Controlling crystal orientations and macroscopic morphology is vital to develop the electronic properties of hybrid perovskites. Here we show that a large-area, orientationally pure crystalline (OPC) methylammonium lead iodide (MAPbI3) hybrid perovskite film can be fabricated using a thermal-gradient-assisted directional crystallization method that relies on the sharp liquid-to-solid transition of MAPbI3 from ionic liquid solution. We find that the OPC films spontaneously form periodic microarrays that are distinguishable from general polycrystalline perovskite materials in terms of their crystal orientation, film morphology and electronic properties. X-ray diffraction patterns reveal that the film is strongly oriented in the (112) and (200) planes parallel to the substrate. This film is structurally confined by directional crystal growth, inducing intense anisotropy in charge transport. In addition, the low trap-state density (7.9 × 1013 cm-3) leads to strong amplified stimulated emission. This ability to control crystal orientation and morphology could be widely adopted in optoelectronic devices.

  17. Radon measurements with a PIN photodiode.

    PubMed

    Martín-Martín, A; Gutiérrez-Villanueva, J L; Muñoz, J M; García-Talavera, M; Adamiec, G; Iñiguez, M P

    2006-01-01

    Silicon photodiodes are well suited to detect alphas coming from different sources as neutron reactions or radon daughters. In this work a radon in air detecting device, using an 18x18 mm silicon PIN photodiode is studied. The ionized airborne decay products formed during radon diffusion were focused by an accelerating high voltage to the PIN surface. Several conducting rings were disposed inside a cylindrical PVC vessel in such a way that they reproduced the electric field created by a punctual charge located behind PIN position. Alpha spectra coming from the neutral and ionized species deposited on the PIN surface, dominated by 218Po and 214Po progeny peaks, were recorded for varying conditions. Those include radon concentration from a Pylon source, high voltage (thousands of volts) and PIN inverse bias voltage. Different parameters such as temperature and humidity were also registered during data acquisition. The increase in the particle collection efficiency with respect to zero electric field was compared with the corresponding to a parallel plates configuration. A discussion is made in terms of the most appropriate voltages for different radon concentrations.

  18. A cooled avalanche photodiode with high photon detection probability

    NASA Technical Reports Server (NTRS)

    Robinson, D. L.; Metscher, B. D.

    1986-01-01

    An avalanche photodiode has been operated as a photon-counting detector with 2 to 3 times the sensitivity of currently-available photomultiplier tubes. APD (avalanche photodiodes) detection probabilities that exceed 27% and approach 50% have been measured at an optimum operating temperature which minimizes noise. The sources of noise and their dependence on operating temperature and bias voltage are discussed.

  19. Learning strategies used by undergraduate and postgraduate students in hybrid courses in the area of health.

    PubMed

    Peixoto, Henry Maia; Peixoto, Mariana Maia; Alves, Elioenai Dornelles

    2012-01-01

    This study aimed to investigate the learning habits and strategies of undergraduate and post-graduate students matriculated in hybrid courses in the area of healthcare at a Brazilian university. 220 graduate students were invited to participate in the research, of whom 67.27% accepted. An exploratory methodology was utilized, which analyzed quantitative data collected by a structured instrument. A similarity may be observed between undergraduate and postgraduate students concerning the majority of education habits and learning strategies, such as the large proportion of those who read more than half of the course content and of those who preferred to study alone, as well as in the high use of the majority of strategies evaluated. It is concluded that both the groups present appropriate study habits and satisfactorily used the learning strategies investigated.

  20. Hybrid multiphase CFD simulation for liquid-liquid interfacial area prediction in annular centrifugal contactors

    SciTech Connect

    Wardle, K.E.

    2013-07-01

    Liquid-liquid contacting equipment used in solvent extraction processes has the dual purpose of mixing and separating two immiscible fluids. Consequently, such devices inherently encompass a wide variety of multiphase flow regimes. A hybrid multiphase computational fluid dynamics (CFD) solver which combines the Eulerian multi-fluid method with VOF (volume of fluid) sharp interface capturing has been developed for application to annular centrifugal contactors. This solver has been extended to enable prediction of mean droplet size and liquid-liquid interfacial area through a single moment population balance method. Simulations of liquid-liquid mixing in a simplified geometry and a model annular centrifugal contactor are reported with droplet breakup/coalescence models being calibrated versus available experimental data. Quantitative comparison is made for two different housing vane geometries and it is found that the predicted droplet size is significantly smaller for vane geometries which result in higher annular liquid holdup.

  1. The large-area hybrid-optics RICH detector for the CLAS12 spectrometer

    DOE PAGES

    Mirazita, M.; Angelini, G.; Balossino, I.; ...

    2017-01-16

    A large area ring-imaging Cherenkov detector has been designed to provide clean hadron identification capability in the momentum range from 3 GeV/c to 8 GeV/c for the CLAS12 experiments at the upgraded 12 GeV continuous electron beam accelerator facility of Jefferson Lab to study the 3D nucleon structure in the yet poorly explored valence region by deep-inelastic scattering, and to perform precision measurements in hadronization and hadron spectroscopy. The adopted solution foresees a novel hybrid optics design based on an aerogel radiator, composite mirrors and densely packed and highly segmented photon detectors. Cherenkov light will either be imaged directly (forwardmore » tracks) or after two mirror reflections (large angle tracks). Finally, the preliminary results of individual detector component tests and of the prototype performance at test-beams are reported here.« less

  2. Status of the development of large area photon detectors based on THGEMs and hybrid MPGD architectures for Cherenkov imaging applications

    NASA Astrophysics Data System (ADS)

    Alexeev, M.; Birsa, R.; Bradamante, F.; Bressan, A.; Büchele, M.; Chiosso, M.; Ciliberti, P.; Torre, S. Dalla; Dasgupta, S.; Denisov, O.; Duic, V.; Finger, M.; Finger, M.; Fischer, H.; Giorgi, M.; Gobbo, B.; Gregori, M.; Herrmann, F.; Königsmann, K.; Levorato, S.; Maggiora, A.; Martin, A.; Menon, G.; Steiger, K.; Novy, J.; Panzieri, D.; Pereira, F. A.; Santos, C. A.; Sbrizzai, G.; Schiavon, P.; Schopferer, S.; Slunecka, M.; Sozzi, F.; Steiger, L.; Sulc, M.; Takekawa, S.; Tessarotto, F.; Veloso, J. F. C. A.; Makke, N.

    2016-07-01

    We report about the development status of large area gaseous single photon detectors based on a novel hybrid concept for RICH applications. The hybrid concept combines Thick Gaseous Electron Multipliers (THGEMs) coupled to CsI, working as a photon sensitive pre-amplification stage, and Micromegas, as a multiplication stage. The most recent achievements within the research and development programme consist in the assembly and study of 300 × 300mm2 hybrid photon detectors, the optimization of front-end electronics, and engineering towards large area detectors. Hybrid detectors with an active area of 300 × 300mm2 have been successfully operated in laboratory conditions and at a CERN PS T10 test beam, achieving effective gains in the order of 105 and good time resolution (σ = 7 ns); APV25 front-end chips have been coupled to the detector resulting in noise levels lower than 1000 electrons; the production and characterization of 300 × 600mm2 THGEMs is ongoing. A set of hybrid detectors with 600 × 600mm2 active area is envisaged to upgrade COMPASS RICH-1 at CERN in 2016.

  3. A high-speed lateral PIN polysilicon photodiode on standard bulk CMOS process

    NASA Astrophysics Data System (ADS)

    Zou, Wanghui; Xia, Yu; Chen, Diping; Zeng, Yun

    2017-03-01

    This paper reports a lateral PIN polysilicon photodiode on standard bulk complementary metal-oxidesemiconductor (CMOS) process for monolithically integrated high-speed optoelectronic integrated circuits (OEIC). A nominal undoped polysilicon as the photodetection area is intentionally created without introducing any process modification. With the device area of 50 × 50 μm2, a measured responsivity of 46 mA/W and a quantum efficiency of 11% were observed under the reverse voltage of 10 V and the wavelength of 520 nm. A compact equivalent circuit model for the proposed lateral photodiode is built to analyze the frequency response, and a bandwidth of over 20 GHz was obtained from the measured data, which is to the best of our knowledge the largest bandwidth ever reported based on standard bulk CMOS process.

  4. Internal quantum efficiency modeling of silicon photodiodes.

    PubMed

    Gentile, T R; Brown, S W; Lykke, K R; Shaw, P S; Woodward, J T

    2010-04-01

    Results are presented for modeling of the shape of the internal quantum efficiency (IQE) versus wavelength for silicon photodiodes in the 400 nm to 900 nm wavelength range. The IQE data are based on measurements of the external quantum efficiencies of three transmission optical trap detectors using an extensive set of laser wavelengths, along with the transmittance of the traps. We find that a simplified version of a previously reported IQE model fits the data with an accuracy of better than 0.01%. These results provide an important validation of the National Institute of Standards and Technology (NIST) spectral radiant power responsivity scale disseminated through the NIST Spectral Comparator Facility, as well as those scales disseminated by other National Metrology Institutes who have employed the same model.

  5. Avalanche speed in thin avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Ong, D. S.; Rees, G. J.; David, J. P. R.

    2003-04-01

    The duration of the avalanche multiplication process in thin GaAs avalanche photodiodes is investigated using a full band Monte Carlo (FBMC) model. The results are compared with those of a simple random path length (RPL) model which makes the conventional assumptions of a displaced exponential for the ionization path length probability distribution function and that carriers always travel at their saturated drift velocities. We find that the avalanche duration calculated by the RPL model is almost twice of that predicted by the FBMC model, although the constant drift velocities used in the former model are estimated using the latter. The faster response predicted by FBMC model arises partly from the reduced dead space but mainly from the velocity overshoot of ionizing carriers. While the feedback multiplication processes forced by the effects of dead space extend the avalanche duration in short structures, the effects of velocity overshoot in the realistic model more than compensate, significantly improving multiplication bandwidth.

  6. Diamond photodiodes for x-ray application

    SciTech Connect

    Distel, James R; Smedley, John; Keister, Jeffrey W; Muller, Erik; Jordan - Sweet, Jean; Bohon, Jen; Dong, Bin

    2009-01-01

    Single crystal high purity CVD diamonds have been metallized and calibrated as photodiodes at the National Synchrotron Light Source (NSLS). Current mode responsivity measurements have been made over a wide range (0.2-28 keV) of photon energies across several beamlines. Linear response has been achieved over ten orders of magnitude of incident flux, along with uniform spatial response. A simple model of responsivity has been used to describe the results, yielding a value of 13.3 {+-} 0.5 eV for the mean pair creation energy. The responsivity vs. photon energy data show a dip for photon energies near the carbon edge (284 eV), indicating incomplete charge collection for carriers created less than one micron from the metallized layer.

  7. A Single-Chip Solar Energy Harvesting IC Using Integrated Photodiodes for Biomedical Implant Applications.

    PubMed

    Chen, Zhiyuan; Law, Man-Kay; Mak, Pui-In; Martins, Rui P

    2017-02-01

    In this paper, an ultra-compact single-chip solar energy harvesting IC using on-chip solar cell for biomedical implant applications is presented. By employing an on-chip charge pump with parallel connected photodiodes, a 3.5 × efficiency improvement can be achieved when compared with the conventional stacked photodiode approach to boost the harvested voltage while preserving a single-chip solution. A photodiode-assisted dual startup circuit (PDSC) is also proposed to improve the area efficiency and increase the startup speed by 77%. By employing an auxiliary charge pump (AQP) using zero threshold voltage (ZVT) devices in parallel with the main charge pump, a low startup voltage of 0.25 V is obtained while minimizing the reversion loss. A 4 Vin gate drive voltage is utilized to reduce the conduction loss. Systematic charge pump and solar cell area optimization is also introduced to improve the energy harvesting efficiency. The proposed system is implemented in a standard 0.18- [Formula: see text] CMOS technology and occupies an active area of 1.54 [Formula: see text]. Measurement results show that the on-chip charge pump can achieve a maximum efficiency of 67%. With an incident power of 1.22 [Formula: see text] from a halogen light source, the proposed energy harvesting IC can deliver an output power of 1.65 [Formula: see text] at 64% charge pump efficiency. The chip prototype is also verified using in-vitro experiment.

  8. Characterization of avalanche photodiodes for lidar atmospheric return signal detectors

    NASA Technical Reports Server (NTRS)

    Antill, C. W., Jr.; Holloway, R. M.

    1988-01-01

    Results are presented from tests to characterize noise, dark current, overload, and gain versus bias, relationships of ten avalanche photodiodes. The advantages of avalanche photodiodes over photomultiplier tubes for given laser wavelengths and return signal amplitudes are outlined. The relationship between responsivity and temperature and dark current and temperature are examined. Also, measurements of the noise equivalent power, the excess noise factor, and linearity are given. The advantages of using avalanche photodiodes in the Lidar Atmospheric Sensing Experiment and the Lidar In-Space Technology Experiment are discussed.

  9. Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

    NASA Astrophysics Data System (ADS)

    Chaghi, R.; Cervera, C.; Aït-Kaci, H.; Grech, P.; Rodriguez, J. B.; Christol, P.

    2009-06-01

    In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H3PO4), citric acid (C6H8O7) and H2O2, followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current-voltage measurements. The zero-bias resistance area product R0A above 4 × 105 Ω cm2 at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air.

  10. Fully tileable photodiode matrix for medical imaging by using through-wafer interconnects

    NASA Astrophysics Data System (ADS)

    Juntunen, Mikko; Ji, Fan; Henttinen, Kimmo; Luusua, Ismo; Hietanen, Iiro; Eränen, Simo

    2007-10-01

    This paper presents a technology for a fully tileable two-dimensional (2D) photodiode matrix for medical imaging, specifically X-ray computed tomography (CT). A key trend in the CT industry is to build machines with larger area detector to speed up the measurements and to avoid image blurring due to patient movement during scanning. In current CT detector constructions, a major limiting factor in providing more detector coverage is the need to read out the signals from the individual photo-detector elements of the detector array through lines along the surface facing the radiation source and wire bonds down to a substrate or to an electronics chip. Using this method, there is a physical limitation on the size of a photo-detector array that may be manufactured. A photo-detector with the possibility of expansion in all directions is known as a 'tileable' detector. A technology of integrating through-wafer interconnects (TWIs) with traditional front illuminated photodiodes is introduced. Photocurrent can be read out from back side of the photodiode chip through interconnects, giving possibility of constructing arbitrarily large area of photo-detector for CT machine. Results of a sample 2D demonstrator detector array are presented showing that the requirements of modern CT systems can be met.

  11. Wedge hybrid plasmonic THz waveguide with long propagation length and ultra-small deep-subwavelength mode area

    PubMed Central

    Gui, Chengcheng; Wang, Jian

    2015-01-01

    We present a novel design of wedge hybrid plasmonic terahertz (THz) waveguide consisting of a silicon (Si) nanowire cylinder above a triangular gold wedge with surrounded high-density polyethylene as cladding. It features long propagation length and ultra-small deep-subwavelength mode confinement. The mode properties of wedge hybrid plasmonic THz waveguide are comprehensively characterized in terms of propagation length (L), normalized mode area (Aeff /A0), figure of merit (FoM), and chromatic dispersion (D). The designed wedge hybrid plasmonic THz waveguide enables an ultra-small deep-subwavelength mode area which is more than one-order of magnitude smaller compared to previous rectangular one. When choosing the diameter of Si nanowire cylinder, a smaller diameter (e.g. 10 μm) is preferred to achieve longer L and higher FoM, while a larger diameter (e.g. 60 μm) is favorable to obtain smaller Aeff /A0 and higher FoM. We further study the impacts of possible practical fabrication errors on the mode properties. The simulated results of propagation length and normalized mode area show that the proposed wedge hybrid plasmonic THz waveguide is tolerant to practical fabrication errors in geometry parameters such as misalignment in the horizontal direction, variation of wedge tip angle, and variation of wedge tip curvature radius. PMID:26155782

  12. Irradiation stability of silicon photodiodes for extreme-ultraviolet radiation

    NASA Astrophysics Data System (ADS)

    Scholze, Frank; Klein, Roman; Bock, Thomas

    2003-10-01

    Photodiodes are used as easy-to-operate detectors in the extreme-ultraviolet spectral range. At the Physikalisch-Technische Bundesanstalt photodiodes are calibrated with an uncertainty of spectral responsivity of 0.3% or less. Stable photodiodes are a prerequisite for the dissemination of these high-accuracy calibrations to customers. Silicon photodiodes with different top layers were exposed to intense extreme-ultraviolet irradiation. Diodes coated with diamondlike carbon or TiSiN proved to be stable within a few percent up to a radiant exposure of 100 kJ/cm2. The changes in responsivity could be explained as being due to carbon contamination and to changes in the internal charge collection efficiency. In ultrahigh vacuum, no indication of oxidation was found.

  13. Relative degradation of near infrared avalanche photodiodes from proton irradiation

    NASA Technical Reports Server (NTRS)

    Becker, Heidi; Johnston, Allan H.

    2004-01-01

    InGaAs and Ge avalanche photodiodes are compared for the effects of 63-MeV protons on dark current. Differences in displacement damage factors are discussed as they relate to structural differences between devices.

  14. New silicon photodiodes for detection of the 1064nm wavelength radiation

    NASA Astrophysics Data System (ADS)

    Wegrzecki, Maciej; Piotrowski, Tadeusz; Puzewicz, Zbigniew; Bar, Jan; Czarnota, Ryszard; Dobrowolski, Rafal; Klimov, Andrii; Kulawik, Jan; Kłos, Helena; Marchewka, Michał; Nieprzecki, Marek; Panas, Andrzej; Seredyński, Bartłomiej; Sierakowski, Andrzej; Słysz, Wojciech; Synkiewicz, Beata; Szmigiel, Dariusz; Zaborowski, Michał

    2016-12-01

    In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described. Electric and photoelectric parameters of the photodiodes mentioned above are presented.

  15. Optimum Receiver Structure for PPM Signals with Avalanche Photodiode Statistics

    NASA Technical Reports Server (NTRS)

    Vilnrotter, V.; Srinivasan, M.

    1998-01-01

    The maximum likelihood decision statistic for detection of pulse-position modulated signals with an avalanche photodiode is derived, using the more accurate Webb density rather than Poisson or Gaussian approximations for the distribution of avalanche photodiode output electrons. It is shown that for Webb-distributed output electtrons, the maximum likelihood rule is to choose the PPM word corresponding to the slot with the maximum electron count.

  16. Radiation threshold levels for noise degradation of photodiodes. Technical report

    SciTech Connect

    Aukerman, L.W.; Vernon, F.L.; Song, Y.

    1986-09-30

    Space radiation can increase the noise of photodiodes as a result of either a sustained ionizing-dose-rate effect or displacement damage. Elementary, straightforward models are presented for calculating radiation threshold levels and rad hit susceptibility. Radiation-effects experiments that verify these models are discussed. Calculations for room-temperature silicon p-i-n photodetectors, an avalanche photodiode, and a hypothetical cooled staring detector indicate that this damage mechanism should not be ignored for space and nuclear environments.

  17. A hybrid variational-ensemble data assimilation scheme with systematic error correction for limited-area ocean models

    NASA Astrophysics Data System (ADS)

    Oddo, Paolo; Storto, Andrea; Dobricic, Srdjan; Russo, Aniello; Lewis, Craig; Onken, Reiner; Coelho, Emanuel

    2016-10-01

    A hybrid variational-ensemble data assimilation scheme to estimate the vertical and horizontal parts of the background error covariance matrix for an ocean variational data assimilation system is presented and tested in a limited-area ocean model implemented in the western Mediterranean Sea. An extensive data set collected during the Recognized Environmental Picture Experiments conducted in June 2014 by the Centre for Maritime Research and Experimentation has been used for assimilation and validation. The hybrid scheme is used to both correct the systematic error introduced in the system from the external forcing (initialisation, lateral and surface open boundary conditions) and model parameterisation, and improve the representation of small-scale errors in the background error covariance matrix. An ensemble system is run offline for further use in the hybrid scheme, generated through perturbation of assimilated observations. Results of four different experiments have been compared. The reference experiment uses the classical stationary formulation of the background error covariance matrix and has no systematic error correction. The other three experiments account for, or not, systematic error correction and hybrid background error covariance matrix combining the static and the ensemble-derived errors of the day. Results show that the hybrid scheme when used in conjunction with the systematic error correction reduces the mean absolute error of temperature and salinity misfit by 55 and 42 % respectively, versus statistics arising from standard climatological covariances without systematic error correction.

  18. Quality assurance using a photodiode array.

    PubMed

    Balderson, M J; Spencer, D P; Nygren, I; Brown, D W

    2011-01-31

    Improved treatment techniques in radiation therapy provide incentive to reduce treatment margins, thereby increasing the necessity for more accurate geometrical setup of the linear accelerator and accompanying components. In the present paper, we describe the development of a novel device that enables precise and automated measurement of geometric parameters for the purpose of improving initial setup accuracy, and for standardizing repeated quality control activities. The device consists of a silicon photodiode array, an evaluation board, a data acquisition card, and a laptop. Measurements that demonstrate the utility of the device are also presented. Using the device, we show that the radiation light field congruence for both 6 and 15 MV beams is within 1.3 mm. The maximum measured disagreement between radiation field edges and light field edges was 1.290 ± 0.002 mm, while the smallest disagreement between the light field and radiation field edge was 0.016 ± 0.003 mm. Because measurements are automated, ambiguities resulting from interobserver variability are removed, greatly improving the reproducibility of measurements across observers. We expect the device to find use in consistency measurements on linear accelerators used for stereotactic radiosurgery, during the commissioning of new linear accelerators, or as an alternative to film or other commercially available devices for performing monthly or annual quality control checks.

  19. Photocurrent enhancement of HgTe quantum dot photodiodes by plasmonic gold nanorod structures.

    PubMed

    Chen, Mengyu; Shao, Lei; Kershaw, Stephen V; Yu, Hui; Wang, Jianfang; Rogach, Andrey L; Zhao, Ni

    2014-08-26

    The near-field effects of noble metal nanoparticles can be utilized to enhance the performance of inorganic/organic photosensing devices, such as solar cells and photodetectors. In this work, we developed a well-controlled fabrication strategy to incorporate Au nanostructures into HgTe quantum dot (QD)/ZnO heterojunction photodiode photodetectors. Through an electrostatic immobilization and dry transfer protocol, a layer of Au nanorods with uniform distribution and controllable density is embedded at different depths in the ZnO layer for systematic comparison. More than 80 and 240% increments of average short-circuit current density (Jsc) are observed in the devices with Au nanorods covered by ∼7.5 and ∼4.5 nm ZnO layers, respectively. A periodic finite-difference time-domain (FDTD) simulation model is developed to analyze the depth-dependent property and confirm the mechanism of plasmon-enhanced light absorption in the QD layer. The wavelength-dependent external quantum efficiency spectra suggest that the exciton dissociation and charge extraction efficiencies are also enhanced by the Au nanorods, likely due to local electric field effects. The photodetection performance of the photodiodes is characterized, and the results show that the plasmonic structure improves the overall infrared detectivity of the HgTe QD photodetectors without affecting their temporal response. Our fabrication strategy and theoretical and experimental findings provide useful insight into the applications of metal nanostructures to enhance the performance of organic/inorganic hybrid optoelectronic devices.

  20. Presumable incipient hybrid speciation of door snails in previously glaciated areas in the Caucasus.

    PubMed

    Koch, Eva L; Neiber, Marco T; Walther, Frank; Hausdorf, Bernhard

    2016-04-01

    Homoploid hybrid speciation, speciation by hybridization without a change in chromosome number, may be the result of an encounter of closely related species in a habitat that is different from that usually occupied by these species. In the northwestern Caucasus the land snail species Micropontica caucasica and M. circassica form two distinct entities with little admixture at low and intermediate altitudes. However, at higher altitudes in the Lagonaki plateau, which were repeatedly glaciated, Micropontica populations with intermediate characters occur. Admixture analyses based on AFLP data demonstrated that the populations from the Lagonaki plateau are homoploid hybrids that now form a cluster separate from the parental species. The Lagonaki populations are characterized by a mtDNA haplotype clade that has been found in the parental species only once. The fixation of this haplotype clade in most hybrid populations suggests that these haplotypes are better adapted to the cooler conditions in high altitude habitats and have replaced the haplotypes of the parental species in a selective sweep. The fixation of a presumably adaptive mitochondrial haplotype clade in the Lagonaki populations is an important step towards speciation under the differential fitness species concept.

  1. Dark current study for CMOS fully integrated-PIN-photodiodes

    NASA Astrophysics Data System (ADS)

    Teva, Jordi; Jessenig, Stefan; Jonak-Auer, Ingrid; Schrank, Franz; Wachmann, Ewald

    2011-05-01

    PIN photodiodes are semiconductor devices widely used in a huge range of applications, such as photoconductors, charge-coupled devices and pulse oximeters for medical applications. The possibility to combine and to integrate the fabrication of the sensor with its signal conditioning circuitry in a CMOS process allows device miniaturization in addition to enhance its properties lowering the production and assembly costs. This paper presents the design and characterization of silicon based PIN photodiodes integrated in a CMOS commercial process. A high-resistivity, low impurity substrate is chosen as the start material for the PIN photodiode array fabrication in order to fabricate devices with a minimum dark current. The dark current is studied, analyzed and measured for two different starting materials and for different geometries. A model previously proposed is reviewed and compared with experimental data.

  2. Functional hybrid systems based on large-area high-quality graphene.

    PubMed

    Coraux, Johann; Marty, Laëtitia; Bendiab, Nedjma; Bouchiat, Vincent

    2013-10-15

    The properties of sp² carbon allotropes can be tuned and enriched by their interaction with other materials. The large interface to the outside world in these forms of carbon is ideally suited for combining in an optimal manner several functionalities thanks to this interaction. A wide range of novel materials holding strong promise in energy, optoelectronics, microelectronics, mechanics, or medical applications have been designed accordingly. Graphene, the last representative of this family of sp² carbon materials, has already yielded a wealth of hybrid systems. A new class of these hybrids is emerging, which allows researchers to exploit the properties of truly single-layer graphene. These systems rely on high-quality graphene. In this Account, we describe our recent efforts to develop hybrid systems through various approaches and with various scopes. Depending on the interaction between graphene and molecules, metal clusters, layers, and substrates, either graphene may essentially preserve the electronic properties that make it a unique platform for electronic transport, or new organization and properties in the materials may arise due to the graphene contact at the expense of deep modification of graphene's properties. We prepare our graphene samples by both mechanical exfoliation of graphite and chemical vapor deposition on metals. We use this to study graphene in contact with various species, which either decorate graphene or are intercalated between it and its substrate. We first address the electronic and magnetic properties in systems where graphene is in epitaxy with a metal and discuss the potential to manipulate the properties of both materials, highlighting graphene's role as a protective capping layer in magnetic functional systems. We then present graphene/metal dot hybrids, which can utilize the two-dimensional gas properties of Dirac fermions in graphene. These hybrids allow one to tune the coupling between clusters hosting electronically ordered

  3. III-V alloy heterostructure high speed avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

  4. Quantifying direct DQPSK receiver with integrated photodiode array by assessing an adapted common-mode rejection ratio

    NASA Astrophysics Data System (ADS)

    Wang, J.; Lauermann, M.; Zawadzki, C.; Brinker, W.; Zhang, Z.; de Felipe, D.; Keil, N.; Grote, N.; Schell, M.

    2011-12-01

    In this work, a direct DQPSK receiver was fabricated, which comprises a polymer waveguide based delay-line interferometer (DLI); a polymer based optical hybrid, and two monolithic pairs of > 25 GHz bandwidth photodiodes that are vertically coupled to the polymer planar lightwave circuit (PLC) via integrated 45° mirrors. The common mode rejection ratio (CMRR) is used to characterize the performance of coherent receivers, by indicating the electrical power balance between the balanced detectors. However, the standard CMRR can only be measured when the PDs can be illuminated separately. Also, the standard CMRR does not take into account the errors in the relative phases of the receiver outputs. We introduce an adapted CMRR to characterize the direct receiver, which takes into account the unequal responsivities of the PDs, the uneven split of the input power by the DLI and hybrid, the phase error and the extinction ratio of the DLI and hybrid.

  5. Comparative performance of HgCdTe photodiodes for heterodyne application

    NASA Technical Reports Server (NTRS)

    Kowitz, H. R.

    1980-01-01

    The use of photodiodes as optical photomixers in laser heterodyne spectroscopy systems is discussed. The quantum efficiency of the photodiodes is reported with the emphasis on its effect on the system's signal to noise ratio. The measurement techniques used to determine photodiode dc and heterodyne quantum efficiencies are described. The theory behind the measurements as well as actual measurements data for two HgCdTe photodiodes are presented.

  6. Controlled-layer and large-area MoS2 films encapsulated Au nanoparticle hybrids for SERS.

    PubMed

    Li, Zhen; Jiang, Shouzhen; Huo, Yanyan; Liu, Mei; Yang, Cheng; Zhang, Chao; Liu, Xiaoyun; Sheng, Yingqing; Li, Chonghui; Man, Baoyuan

    2016-11-14

    In this work, a facile and effective method for controlled-layer and large-area MoS2 films encapsulated Au nanoparticle hybrids is developed. With accurate Ar plasma treatment time control, the large-area MoS2 layers can be obtained from monolayer to trilayer. The fabricated MoS2@Au NPs with higher surface area exhibit excellent Raman enhanced effect for aromatic organic molecules (rhodamine 6G and crystal violet) and achieve the best when the monolayer MoS2@AuNPs was obtained. The limit of detection is found to be as low as 1 × 10-10 M. The MoS2@AuNPs was characterized by SEM, EDS, AFM, Raman spectroscopy, UV-Vis, XRD and HRTEM.

  7. Rapid production of large-area deep sub-wavelength hybrid structures by femtosecond laser light-field tailoring

    SciTech Connect

    Wang, Lei; Chen, Qi-Dai E-mail: hbsun@jlu.edu.cn; Yang, Rui; Xu, Bin-Bin; Wang, Hai-Yu; Yang, Hai; Huo, Cheng-Song; Tu, Hai-Ling; Sun, Hong-Bo E-mail: hbsun@jlu.edu.cn

    2014-01-20

    The goal of creation of large-area deep sub-wavelength nanostructures by femtosecond laser irradiation onto various materials is being hindered by the limited coherence length. Here, we report solution of the problem by light field tailoring of the incident beam with a phase mask, which serves generation of wavelets. Direct interference between the wavelets, here the first-order diffracted beams, and interference between a wavelet and its induced waves such as surface plasmon polariton are responsible for creation of microgratings and superimposed nanogratings, respectively. The principle of wavelets interference enables extension of uniformly induced hybrid structures containing deep sub-wavelength nanofeatures to macro-dimension.

  8. Reading a CD-ROM without a photodiode

    NASA Astrophysics Data System (ADS)

    Wishon, Michael J.; Mourozeau, G.; Ng, K.; Sahai, A. A.; Locquet, Alexandre; Citrin, D. S.

    2016-04-01

    We use a laser diode from a commercial CD/DVD-ROM drive to detect changes in the surface of a diffraction grating without a photodiode. Specifically, we exploit the changing terminal voltage in the laser-diode due to changing feedback strength as the laser is rastered across the grating's surface.

  9. BiCMOS-integrated photodiode exploiting drift enhancement

    NASA Astrophysics Data System (ADS)

    Swoboda, Robert; Schneider-Hornstein, Kerstin; Wille, Holger; Langguth, Gernot; Zimmermann, Horst

    2014-08-01

    A vertical pin photodiode with a thick intrinsic layer is integrated in a 0.5-μm BiCMOS process. The reverse bias of the photodiode can be increased far above the circuit supply voltage, enabling a high-drift velocity. Therefore, a highly efficient and very fast photodiode is achieved. Rise/fall times down to 94 ps/141 ps at a bias of 17 V were measured for a wavelength of 660 nm. The bandwidth was increased from 1.1 GHz at 3 V to 2.9 GHz at 17 V due to the drift enhancement. A quantum efficiency of 85% with a 660-nm light was verified. The technological measures to avoid negative effects on an NPN transistor due to the Kirk effect caused by the low-doped I-layer epitaxy are described. With a high-energy collector implant, the NPN transit frequency is held above 20 GHz. CMOS devices are unaffected. This photodiode is suitable for a wide variety of high-sensitivity optical sensor applications, for optical communications, for fiber-in-the-home applications, and for optical interconnects.

  10. Increasing the dynamic range of CMOS photodiode imagers

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor); Hancock, Bruce R. (Inventor)

    2007-01-01

    A multiple-step reset process and circuit for resetting a voltage stored on a photodiode of an imaging device. A first stage of the reset occurs while a source and a drain of a pixel source-follower transistor are held at ground potential and the photodiode and a gate of the pixel source-follower transistor are charged to an initial reset voltage having potential less that of a supply voltage. A second stage of the reset occurs after the initial reset voltage is stored on the photodiode and the gate of the pixel source-follower transistor and the source and drain voltages of the pixel source-follower transistor are released from ground potential thereby allowing the source and drain voltages of the pixel source-follower transistor to assume ordinary values above ground potential and resulting in a capacitive feed-through effect that increases the voltage on the photodiode to a value greater than the initial reset voltage.

  11. Traveling wave model of uni-traveling carrier photodiode

    NASA Astrophysics Data System (ADS)

    Khanra, Senjuti; Das Barman, Abhirup

    2015-06-01

    A traveling wave time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is presented in terms of integral carrier density rate equation. The wavelength dependent responsivity at different absorption width has been derived from quantum mechanical principle. Output photocurrent response with time is found in close agreement with the experimental value.

  12. Photonic nanojet-enhanced nanometer-scale germanium photodiode.

    PubMed

    Hasan, Mehdi; Simpson, Jamesina J

    2013-08-01

    A design challenge for photodiodes yielding both high speed and responsivity is the necessity to concentrate incident light into a subwavelength active volume region. Photonic nanojets have been reported in the literature as a means to focus an incident plane wave to a subwavelength-waist propagating beam with applications ranging from next-generation DVDs to characterizing subwavelength features within dielectric targets. In the present work, a new application of photonic nanojets is proposed, focusing electromagnetic energy into a photodiode. Three-dimensional finite-difference time-domain solutions are conducted to determine the advantages of photonic nanojet-enhanced photodiodes at near-infrared wavelengths (1310 nm). We find that photonic nanojets provide a factor of 26 increase in the volume-integrated electric field within the subwavelength active volume of the photodiode of size 0.0045 μm³. Furthermore, this increase is achieved independent of the incident polarization and over a broad bandwidth. Photonic nanojets may thus serve as an attractive alternative to plasmonics for some applications.

  13. Linear array of photodiodes to track a human speaker for video recording

    NASA Astrophysics Data System (ADS)

    DeTone, D.; Neal, H.; Lougheed, R.

    2012-12-01

    Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant- the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting-a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

  14. New integration concept of PIN photodiodes in 0.35μm CMOS technologies

    NASA Astrophysics Data System (ADS)

    Jonak-Auer, I.; Teva, J.; Park, J. M.; Jessenig, S.; Rohrbacher, M.; Wachmann, E.

    2012-06-01

    We report on a new and very cost effective way to integrate PIN photo detectors into a standard CMOS process. Starting with lowly p-doped (intrinsic) EPI we need just one additional mask and ion implantation in order to provide doping concentrations very similar to standard CMOS substrates to areas outside the photoactive regions. Thus full functionality of the standard CMOS logic can be guaranteed while the photo detectors highly benefit from the low doping concentrations of the intrinsic EPI. The major advantage of this integration concept is that complete modularity of the CMOS process remains untouched by the implementation of PIN photodiodes. Functionality of the implanted region as host of logic components was confirmed by electrical measurements of relevant standard transistor as well as ESD protection devices. We also succeeded in establishing an EPI deposition process in austriamicrosystems 200mm wafer fabrication which guarantees the formation of very lowly p-doped intrinsic layers, which major semiconductor vendors could not provide. With our EPI deposition process we acquire doping levels as low as 1•1012/cm3. In order to maintain those doping levels during CMOS processing we employed special surface protection techniques. After complete CMOS processing doping concentrations were about 4•1013/cm3 at the EPI surface while the bulk EPI kept its original low doping concentrations. Photodiode parameters could further be improved by bottom antireflective coatings and a special implant to reduce dark currents. For 100×100μm2 photodiodes in 20μm thick intrinsic EPI on highly p-doped substrates we achieved responsivities of 0.57A/W at λ=675nm, capacitances of 0.066pF and dark currents of 0.8pA at 2V reverse voltage.

  15. Hybrid expert system for decision supporting in the medical area: complexity and cognitive computing.

    PubMed

    Brasil, L M; de Azevedo, F M; Barreto, J M

    2001-09-01

    This paper proposes a hybrid expert system (HES) to minimise some complexity problems pervasive to the artificial intelligence such as: the knowledge elicitation process, known as the bottleneck of expert systems; the model choice for knowledge representation to code human reasoning; the number of neurons in the hidden layer and the topology used in the connectionist approach; the difficulty to obtain the explanation on how the network arrived to a conclusion. Two algorithms applied to developing of HES are also suggested. One of them is used to train the fuzzy neural network and the other to obtain explanations on how the fuzzy neural network attained a conclusion. To overcome these difficulties the cognitive computing was integrated to the developed system. A case study is presented (e.g. epileptic crisis) with the problem definition and simulations. Results are also discussed.

  16. Anatexis, hybridization and the modification of ancient crust: Mesozoic plutonism in the Old Woman Mountains area, California

    USGS Publications Warehouse

    Miller, C.F.; Wooden, J.L.

    1994-01-01

    A compositionally expanded array of granitic (s.l.) magmas intruded the > 2 Ga crust of the Old Woman Mountains area between 160 and 70 Ma. These magmas were emplaced near the eastern (inland) edge of the Jurassic/Cretaceous arcs of western North America, in an area where magma flux, especially during the Jurassic, was considerably lower than to the west. The Jurassic intrusives and over half of the Cretaceous intrusives are predominantly metaluminous and variable in composition; a major Cretaceous suite comprises only peraluminous monzogranite. Only the Jurassic intrusions show clear evidence for the presence of mafic liquids. All units, including the most mafic rocks, reveal isotopic evidence for a significant crustal component. However, none of the Mesozoic intrusives matches in isotopic composition either average pre-intrusion crust or any major unit of the exposed crust. Elemental inconsistencies also preclude closed system derivation from exposed crust. Emplacement of these magmas, which doubled the volume of the mid- to upper crust, did not dramatically change its elemental composition. It did, however, affect its Nd and especially Sr isotopic composition and modify some of the distinctive aspects of the elemental chemistry. We propose that Jurassic magmatism was open-system, with a major influx of mantle-derived mafic magma interacting strongly with the ancient crust. Mesozoic crustal thickening may have led to closed-system crustal melting by the Late Cretaceous, but the deep crust had been profoundly modified by earlier Mesozoic hybridization so that crustal melts did not simply reflect the original crustal composition. The clear evidence for a crustal component in magmas of the Old Woman Mountains area may not indicate any fundamental differences from the processes at work elsewhere in this or other magmatic arcs where the role of pre-existing crust is less certain. Rather, a compositionally distinctive, very old crust may simply have yielded a more

  17. Hybridization of Southern Hemisphere blue whale subspecies and a sympatric area off Antarctica: impacts of whaling or climate change?

    PubMed

    Attard, Catherine R M; Beheregaray, Luciano B; Jenner, K Curt S; Gill, Peter C; Jenner, Micheline-Nicole; Morrice, Margaret G; Robertson, Kelly M; Möller, Luciana M

    2012-12-01

    Understanding the degree of genetic exchange between subspecies and populations is vital for the appropriate management of endangered species. Blue whales (Balaenoptera musculus) have two recognized Southern Hemisphere subspecies that show differences in geographic distribution, morphology, vocalizations and genetics. During the austral summer feeding season, the Antarctic blue whale (B. m. intermedia) is found in polar waters and the pygmy blue whale (B. m. brevicauda) in temperate waters. Here, we genetically analyzed samples collected during the feeding season to report on several cases of hybridization between the two recognized blue whale Southern Hemisphere subspecies in a previously unconfirmed sympatric area off Antarctica. This means the pygmy blue whales using waters off Antarctica may migrate and then breed during the austral winter with the Antarctic subspecies. Alternatively, the subspecies may interbreed off Antarctica outside the expected austral winter breeding season. The genetically estimated recent migration rates from the pygmy to Antarctic subspecies were greater than estimates of evolutionary migration rates and previous estimates based on morphology of whaling catches. This discrepancy may be due to differences in the methods or an increase in the proportion of pygmy blue whales off Antarctica within the last four decades. Potential causes for the latter are whaling, anthropogenic climate change or a combination of these and may have led to hybridization between the subspecies. Our findings challenge the current knowledge about the breeding behaviour of the world's largest animal and provide key information that can be incorporated into management and conservation practices for this endangered species.

  18. A National Assessment of Promising Areas for Switchgrass, Hybrid Poplar, or Willow Energy Crop Production

    SciTech Connect

    Graham, R.L.; Walsh, M.E.

    1999-02-01

    The objective of this paper is to systematically assess the cropland acreage that could support energy crops and the expected farm gate and delivered prices of energy crops. The assessment is based on output from two modeling approaches: (1) the Oak Ridge County-Level Energy Crop (ORECCL) database (1996 version) and (2) the Oak Ridge Integrated Bioenergy Analysis System (ORIBAS). The former provides county-level estimates of suitable acres, yields, and farmgate prices of energy crops (switchgrass, hybrid poplar, willow) for all fifty states. The latter estimates delivered feedstock prices and quantities within a state at a fine resolution (1 km2) and considers the interplay between transportation costs, farmgate prices, cropland density, and facility demand. It can be used to look at any type of feedstock given the appropriate input parameters. For the purposes of this assessment, ORIBAS has been used to estimate farmgate and delivered switchgrass prices in 11 states (AL, FL, GA, IA, M N, MO, ND, NE, SC, SD, and TN). Because the potential for energy crop production can be considered from several perspectives, and is evolving as policies, economics and our basic understanding of energy crop yields and production costs change, this assessment should be viewed as a snapshot in time.

  19. Photon counting photodiode array detector for far ultraviolet (FUV) astronomy

    NASA Technical Reports Server (NTRS)

    Hartig, G. F.; Moos, H. W.; Pembroke, R.; Bowers, C.

    1982-01-01

    A compact, stable, single-stage intensified photodiode array detector designed for photon-counting, far ultraviolet astronomy applications employs a saturable, 'C'-type MCP (Galileo S. MCP 25-25) to produce high gain pulses with a narrowly peaked pulse height distribution. The P-20 output phosphor exhibits a very short decay time, due to the high current density of the electron pulses. This intensifier is being coupled to a self-scanning linear photodiode array which has a fiber optic input window which allows direct, rigid mechanical coupling with minimal light loss. The array was scanned at a 250 KHz pixel rate. The detector exhibits more than adequate signal-to-noise ratio for pulse counting and event location. Previously announced in STAR as N82-19118

  20. Planar InAs photodiodes fabricated using He ion implantation.

    PubMed

    Sandall, Ian; Tan, Chee Hing; Smith, Andrew; Gwilliam, Russell

    2012-04-09

    We have performed Helium (He) ion implantation on InAs and performed post implant annealing to investigate the effect on the sheet resistance. Using the transmission line model (TLM) we have shown that the sheet resistance of a p⁺ InAs layer, with a nominal doping concentration of 1x10¹⁸ cm⁻³, can increase by over 5 orders of magnitude upon implantation. We achieved a sheet resistance of 1x10⁵ Ω/Square in an 'as-implanted' sample and with subsequent annealing this can be further increased to 1x10⁷ Ω/Square. By also performing implantation on p-i-n structures we have shown that it is possible to produce planar photodiodes with comparable dark currents and quantum efficiencies to chemically etched reference mesa InAs photodiodes.

  1. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes

    NASA Astrophysics Data System (ADS)

    Barkad, H. A.; Soltani, A.; Mattalah, M.; Gerbedoen, J.-C.; Rousseau, M.; De Jaeger, J.-C.; BenMoussa, A.; Mortet, V.; Haenen, K.; Benbakhti, B.; Moreau, M.; Dupuis, R.; Ougazzaden, A.

    2010-11-01

    Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal-semiconductor-metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallization. The material is characterized by the micro-Raman spectroscopy and x-ray diffraction technique. The detector presents an extremely low dark current of 100 fA at -100 V dc bias for large device area as high as 3.1 mm2. It also exhibits a rejection ratio between 180 and 300 nm of three orders of magnitude with a very sharp cut-off wavelength at 203 nm (~6.1 eV). The simulation to optimize the photodiode topology is based on a 2D energy-balance model using the COMSOL® software. Simulation performed for different spacing for a given bias between electrodes show that a compromise must be found between the dark current and the responsivity for the optimization of the device performance. The measurement results are in good agreement with the model predictions.

  2. New optical probe approach using mixing effect in planar photodiode for biomedical applications

    NASA Astrophysics Data System (ADS)

    Pereira, Tânia; Vaz, Pedro; Oliveira, Tatiana; Santos, Inês; Leal, Adriana; Almeida, Vânia; Pereira, Helena; Correia, Carlos; Cardoso, João.

    2013-05-01

    The laser diode self-mixing technique is a well-known and powerful interferometric technique that has been used in biomedical applications, namely for the extraction of cardiovascular parameters. However, to construct an optical probe using the self-mixing principle which is able to acquire signals in the human carotid artery, some problems are expected. The laser diode has a small aperture area, which means that, for physiological sensing purposes, it can be considered as a point-like detector. This feature imparts difficulties to quality recording of physiological signals since the number of photons collected and mixed in the cavity of the photodiode is very small. In order to overcome this problem, a new mixing geometry based on an external large area planar photodiode (PD) is used in the probe, enabling a much larger number of photons to be collected, hence improving the quality of the signal. In this work, the possibility to obtain the mixing effect outside the laser cavity using an external photodetector, such as a planar photodiode, is demonstrated. Two test benches were designed, both with of two reflectors. The first one, which reflects the light beam with the same frequency of the original one is fixed, and the second one, is movable, reflecting the Doppler shifted light to the photodetector. The first test bench has a fixed mirror in front of the movable mirror, creating an umbra and penumbra shadow above the movable mirror. To avoid this problem, another test bench was constructed using a wedged beam splitter (WSB) instead of a fixed mirror. This new assembly ensures the separation of a single input beam into multiple copies that undergo successive reflections and refractions. Some light waves are reflected by the planar surface of WSB, while other light beams are transmitted through the WSB, reaching the movable mirror. Also in this case, the movable mirror reflects the light with a Doppler frequency shift, and the PD receives both beams. The two test

  3. Si(1-x)Ge(x)/Si Infrared Photodiodes

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1991-01-01

    Cutoff wavelengths depend on x and also adjusted somewhat via reverse bias. Si1-xGex photodiodes with cutoff wavelengths in and beyond practically important range of 8 to 12 micrometers made by molecular-beam epitaxy. Compatible (in terms of fabrication processes) with silicon readout circuitry, exhibit long-term stability, manufactured with sufficient uniformity for use in focal-plane arrays; and operate at temperatures approximately greater than 65 K, for which temperatures small, portable refrigerators available.

  4. Avalanche Photodiode Statistics in Triggered-avalanche Detection Mode

    NASA Technical Reports Server (NTRS)

    Tan, H. H.

    1984-01-01

    The output of a triggered avalanche mode avalanche photodiode is modeled as Poisson distributed primary avalanche events plus conditionally Poisson distributed trapped carrier induced secondary events. The moment generating function as well as the mean and variance of the diode output statistics are derived. The dispersion of the output statistics is shown to always exceed that of the Poisson distribution. Several examples are considered in detail.

  5. Receiver characteristics of laser altimeters with avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Sun, Xiaoli; Davidson, Frederic M.; Boutsikaris, Leo; Abshire, James B.

    1992-01-01

    The receiver characteristics of a laser altimeter system containing an avalanche photodiode photodetector are analyzed using the Gaussian approximation, the saddle-point approximation, and a nearly exact analysis. The last two methods are shown to yield very similar results except when the background noise is extremely low and the probability of false alarm is high. However, the Gaussian approximation method is shown to cause significant errors even under relatively high levels of background noise and received signal energy.

  6. Geiger-mode avalanche photodiodes, history, properties and problems

    NASA Astrophysics Data System (ADS)

    Renker, D.

    2006-11-01

    Geiger-mode avalanche photodiodes (G-APDs) have been developed during recent years and promise to be an alternative to photomultiplier tubes. They have many advantages like single photon response, high detection efficiency, high gain at low bias voltage and very good timing properties but some of their properties, the dark count rate for example, can be a problem. Several types of G-APDs are on the market and should be selected carefully for a given application.

  7. Automated Sky-Compensating Photometer with a Silicon Photodiode

    NASA Astrophysics Data System (ADS)

    Riggs, J. D.; Alexander, D. R.

    1983-12-01

    This article describes the automated, sky-compensating filter photometer, currently being built and tested for the Lake Afton Public Observatory (LAPO) at Wichita State University, for use on the 16-inch Ritchey-Chretien telescope. Design emphasis is directed toward minimal user intervention due to varying user backgrounds. The instrumentation consists of a sky-compensating photometer, a Hamamatsu S1133-01 silicon photodiode detector, a programmable DC amplifier, and a computer dedicated to data collection and photometer control.

  8. Investigation of avalanche photodiodes radiation hardness for baryonic matter studies

    NASA Astrophysics Data System (ADS)

    Kushpil, V.; Mikhaylov, V.; Ladygin, V. P.; Kugler, A.; Kushpil, S.; Svoboda, O.; Tlustý, P.

    2016-01-01

    Modern avalanche photodiodes (APDs) with high gain are good device candidates for light readout from detectors applied in relativistic heavy ion collisions experiments. The results of the investigations of the APDs properties from Zecotek, Ketek and Hamamatsu manufacturers after irradiation using secondary neutrons from cyclotron facility U120M at NPI of ASCR in Řež are presented. The results of the investigations can be used for the design of the detectors for the experiments at NICA and FAIR.

  9. III-Nitride Visible- and Solar-Blind Avalanche Photodiodes

    DTIC Science & Technology

    2007-12-01

    Manager: Dr. Donald Silversmith – Air Force Office of Scientific Research Principal Investigator: Professor Manijeh Razeghi Center for...photodiodes K. Minder, J.L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi and D. Silversmith Applied Physics Letters, Vol. 91, No. 7, p. 073513-1...M. Razeghi, E. Muñoz, and D. Silversmith Applied Physics Letters, Vol. 91, No. 04, p. 041104 -1-- July 23, 2007 3. Hole-initiated multiplication

  10. Area-efficient nonvolatile carry chain based on pass-transistor/atom-switch hybrid logic

    NASA Astrophysics Data System (ADS)

    Bai, Xu; Tsuji, Yukihide; Sakamoto, Toshitsugu; Morioka, Ayuka; Miyamura, Makoto; Tada, Munehiro; Banno, Naoki; Okamoto, Koichiro; Iguchi, Noriyuki; Hada, Hiromitsu

    2016-04-01

    For the first time, an area-efficient nonvolatile carry chain combining look-up tables and a pass-transistor-logic-based adder is newly developed using complementary atom switches without additional CMOS circuits. A proposed tristate switch composed of three pairs of complementary atom switches selects one of “0”, “1”, and the “carry_in” signal as the input of a common multiplexer for both a look-up table and an adder. The developed nonvolatile carry chain achieves the reductions of 20% area, 17% delay, and 17% power consumption, respectively, in comparison with a conventional nonvolatile carry chain using dedicated CMOS gates.

  11. Hybrid Ytterbium-doped large-mode-area photonic crystal fiber amplifier for long wavelengths.

    PubMed

    Petersen, Sidsel R; Alkeskjold, Thomas T; Poli, Federica; Coscelli, Enrico; Jørgensen, Mette M; Laurila, Marko; Lægsgaard, Jesper; Broeng, Jes

    2012-03-12

    A large-mode-area Ytterbium-doped photonic crystal fiber amplifier with build-in gain shaping is presented. The fiber cladding consists of a hexagonal lattice of air holes, where three rows are replaced with circular high-index inclusions. Seven missing air holes define the large-mode-area core. Light confinement is achieved by combined index and bandgap guiding, which allows for single-mode operation and gain shaping through distributed spectral filtering of amplified spontaneous emission. The fiber properties are ideal for amplification in the long wavelength regime of the Ytterbium gain spectrum above 1100 nm, and red shifting of the maximum gain to 1130 nm is demonstrated.

  12. Vertically illuminated TW-UTC photodiodes for terahertz generation

    NASA Astrophysics Data System (ADS)

    Barrientos Z., Claudio M.; Calle G., Victor H.; Alvarez, Jaime A.; Mena, F. Patricio; Vukusic, Josip; Stake, Jan; Michael, Ernest A.

    2012-09-01

    More efficient and powerful continuous-wave photonic mixers as terahertz sources are motivated by the need of more versatile local oscillators for submillimeter/terahertz receiver systems. Uni-Travelling Carrier (UTC) photodiodes are very prospective candidates for reaching this objective, but so far only have been reported as lumped-elements or as edge-illuminated optical-waveguide travelling-wave (TW) devices. To overcome the associated power limitations of those implementations, we are developing a novel implementation of the UTC photodiodes which combines a travelingwave photomixer with vertical velocity-matched illumination in a distributed structure. In this implementation called velocity-matched travelling-wave uni-travelling carrier photodiode, it is possible to obtain in-situ velocity matching of the beat-fringes of the two angled laser beams with the submm/THz-wave on the stripline. In this way, minimum frequency roll-off is achieved by tuning the angle between the two laser beams. A first design of these TW-UTC PDs from our Terahertz Photonics Laboratory at University of Chile has been micro-fabricated at the MC2 cleanroom facility at Chalmers Technical University.

  13. A hybrid 802.16/802.11 network architecture for a United States coastal area network

    NASA Astrophysics Data System (ADS)

    Burbank, Jack L.; Kasch, William T.; Andrusenko, Julia; Haberman, Brian K.; Nichols, Robert; Zheng, Harold

    2007-04-01

    This paper presents a concept for a United States Coastal Area Network (U-SCAN) that is comprised of IEEE 802.11, 802.16, and satellite communications technologies. The Office of Naval Research (ONR) on behalf of the National Oceanographic Partnership Program (NOPP) has tasked The Johns Hopkins University Applied Physics Laboratory (JHU/APL) to perform an architectural study into the establishment of a United States Coastal Area Network (U-SCAN). The goal of this study is to define a wireless network architecture that can be deployed to enable contiguous coastal area network coverage for scientific, commercial, and homeland security (e.g. Coast Guard) applications within the United States Exclusive Economic Zone (EEZ), in a manner that is flexible, manageable, and affordable. The JHU/APL study will ultimately provide recommendations to NOPP regarding potential network architectures and technologies that could provide the desired capability, with a particular focus on commercial (both existing and emerging) technologies. This paper presents the envisioned U-SCAN architecture, and presents the envisioned technical capabilities and shortcomings of the component candidate technologies.

  14. The hybrid photonic planar integrated receiver with a polymer optical waveguide

    NASA Astrophysics Data System (ADS)

    Busek, Karel; Jerábek, Vitezslav; Armas Arciniega, Julio; Prajzler, Václav

    2008-11-01

    This article describes design of the photonic receiver composed of the system polymer planar waveguides, InGaAs p-i-n photodiode and integrated HBT amplifier on a low loss composite substrate. The photonic receiver was the main part of the hybrid integrated microwave optoelectronic transceiver TRx (transciever TRx) for the optical networks PON (passive optical networks) with FTTH (fiber-to-the-home) topology. In this article are presented the research results of threedimensional field between output facet of a optical waveguide and p-i-n photodiode. In terms of our research, there was optimized the optical coupling among the facet waveguide and pi-n photodiode and the electrical coupling among p-i-n photodiode and input of HBT amplifier. The hybrid planar lightwave circuit (PLC) of the transceiver TRx will be composed from a two parts - polymer optical waveguide including VHGT filter section and a optoelectronic microwave section.

  15. Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

    SciTech Connect

    Suzuki, Shingo; Namekata, Naoto Inoue, Shuichiro; Tsujino, Kenji

    2014-01-27

    We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

  16. Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof

    DOEpatents

    Skogen, Erik J.

    2016-10-25

    The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.

  17. Compact multispectral photodiode arrays using micropatterned dichroic filters

    NASA Astrophysics Data System (ADS)

    Chandler, Eric V.; Fish, David E.

    2014-05-01

    The next generation of multispectral instruments requires significant improvements in both spectral band customization and portability to support the widespread deployment of application-specific optical sensors. The benefits of spectroscopy are well established for numerous applications including biomedical instrumentation, industrial sorting and sensing, chemical detection, and environmental monitoring. In this paper, spectroscopic (and by extension hyperspectral) and multispectral measurements are considered. The technology, tradeoffs, and application fits of each are evaluated. In the majority of applications, monitoring 4-8 targeted spectral bands of optimized wavelength and bandwidth provides the necessary spectral contrast and correlation. An innovative approach integrates precision spectral filters at the photodetector level to enable smaller sensors, simplify optical designs, and reduce device integration costs. This method supports user-defined spectral bands to create application-specific sensors in a small footprint with scalable cost efficiencies. A range of design configurations, filter options and combinations are presented together with typical applications ranging from basic multi-band detection to stringent multi-channel fluorescence measurement. An example implementation packages 8 narrowband silicon photodiodes into a 9x9mm ceramic LCC (leadless chip carrier) footprint. This package is designed for multispectral applications ranging from portable color monitors to purpose- built OEM industrial and scientific instruments. Use of an eight-channel multispectral photodiode array typically eliminates 10-20 components from a device bill-of-materials (BOM), streamlining the optical path and shrinking the footprint by 50% or more. A stepwise design approach for multispectral sensors is discussed - including spectral band definition, optical design tradeoffs and constraints, and device integration from prototype through scalable volume production

  18. Absolute spectral response measurements of different photodiodes useful for applications in the UV spectral region

    NASA Astrophysics Data System (ADS)

    Pelizzo, Maria G.; Ceccherini, Paolo; Garoli, Denis; Masut, Pietro; Nicolosi, Piergiorgio

    2004-09-01

    Long UV radiation exposure can result in damages of biological tissues, as burns, skin aging, erythema and even melanoma cancer. In the past years an increase of melanoma cancer has been observed and associated to the atmospheric ozone deployment. Attendance of sun tanning unit centers has become a huge social phenomena, and the maximum UV radiation dose that a human being can receive is regulated by law. On the other side, UV radiation is largely used for therapeutic and germicidal purposes. In all these areas, spectroradiometer and radiomenter are needed for monitoring UVA (315-400 nm), UVB (280-315 nm) and UVC (100-280 nm) irradiance. We have selected some commercial photodiodes which can be used as solid state detectors in these instruments. We have characterized them by measuring their absolute spectral response in the 200 - 400 nm spectral range.

  19. Hard disk drive based microsecond x-ray chopper for characterization of ionization chambers and photodiodes

    SciTech Connect

    Müller, O. Lützenkirchen-Hecht, D.; Frahm, R.

    2015-03-15

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

  20. Hard disk drive based microsecond X-ray chopper for characterization of ionization chambers and photodiodes.

    PubMed

    Müller, O; Lützenkirchen-Hecht, D; Frahm, R

    2015-03-01

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

  1. Hard disk drive based microsecond x-ray chopper for characterization of ionization chambers and photodiodes

    NASA Astrophysics Data System (ADS)

    Müller, O.; Lützenkirchen-Hecht, D.; Frahm, R.

    2015-03-01

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

  2. Vertically illuminated TW-UTC photodiodes for terahertz generation

    NASA Astrophysics Data System (ADS)

    Barrientos Z., Claudio; Calle, Victor; Diaz, Marcos; Mena, F. Patricio; Vukusic, Josip; Stake, Jan; Michael, Ernest A.

    2010-07-01

    More efficient continuous-wave photonic nearinfrared mixers as terahertz sources are investigated with the motivation to develop a universal photonic local oscillator for astronomical submillimeter/terahertz receiver systems. For this, we develop new concepts for vertically illuminated traveling-wave (TW) photomixers, TW Uni-Travelling Carrier (UTC) photodiodes. Device simulation/modeling and optical/terahertz testing is being done in the new terahertz photonics laboratory at the Electrical Engineering Department of the University of Chile, whereas device fabrication is performed at the MC2 cleanroom facility at Chalmers Technical University. We report on first progress in this direction.

  3. Vertically Illuminated TW-UTC Photodiodes for Terahertz Generation

    NASA Astrophysics Data System (ADS)

    Barrientos, C.; Calle, V.; Diaz, M.; Mena, F. P.; Vukusic, J.; Stake, J.; Michael, E. A.

    2010-03-01

    More efficient continuous-wave photonic near-infrared mixers as terahertz sources are investigated with the motivation to develop a universal photonic local oscillator for astronomical submillimeter/terahertz receiver systems. For this, our group has developed new concepts for vertically illuminated traveling-wave (TW) photomixers. The new device called TW-Uni-Travelling Carrier photodiodes (TW-UTC PD) was simulated, modeled and shall be optical/terahertz tested at the Electrical Engineering Department of the University of Chile, whereas device fabrication is performed at the MC2 cleanroom facility at Chalmers University of technology. We are reporting on first progresses in this direction.

  4. Reliability assessment of multiple quantum well avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

    1995-01-01

    The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

  5. Capacitance-Voltage (CV) Measurement of Type-2 Superlattice Photodiodes

    DTIC Science & Technology

    2016-01-05

    superlattice p-i-n photodiodes as a function of growth temperature and Beryllium (Be) compensated doping. The unintentionally doped InAs/InAs0.45Sb0.55...background carrier concentration can be reduced by optimizing growth temperature and by Be-compensation doping. Different kinds of defects exist in the...undoped InAs/InAs1-xSbx type-II superlattice and their dependence on the growth temperature was also investigated. Number of Papers published in peer

  6. A 1.06 micrometer avalanche photodiode receiver

    NASA Technical Reports Server (NTRS)

    Eden, R. C.

    1975-01-01

    The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.

  7. Application of photodiodes to the detection of electromagnetic bursts

    NASA Technical Reports Server (NTRS)

    Fukushima, Y.; Saito, T.; Sakata, M.; Shima, M.; Yamamoto, Y.

    1985-01-01

    A new type of photodiode + scintillator (1 m2 x 1 cm) detector is developed to detect the large electro-magnetic burst under an EX-chamber. The threshold burst size is found to be 4.3 x 10 the 5 particles at the center of the scintillator. Therefore a gamma-ray family of 10 TeV is detectable by it, when it is set under 14 r.1. of iron. In addition, a very fast (2.4 nsec width) and very bright (correspond to 10 to the 6 particles) scintillation pulse has become avarable for this study.

  8. Thermal calibration of photodiode sensitivity for atomic force microscopy

    SciTech Connect

    Attard, Phil; Pettersson, Torbjoern; Rutland, Mark W.

    2006-11-15

    The photodiode sensitivity in the atomic force microscope is calibrated by relating the voltage noise to the thermal fluctuations of the cantilever angle. The method accounts for the ratio of the thermal fluctuations measured in the fundamental vibration mode to the total, and also for the tilt and extended tip of the cantilever. The method is noncontact and is suitable for soft or deformable surfaces where the constant compliance method cannot be used. For hard surfaces, the method can also be used to calibrate the cantilever spring constant.

  9. Radiation Threshold Levels for Noise Degradation of Photodiodes.

    DTIC Science & Technology

    1986-09-30

    for Noise Degradation of Photodiodes L. W. AUKERMAN , F. L. VERNON, Jr., and Y. SONG Electronics Research Laboratory Laboratory Operations The...PERFORMING ORG. REPORT NUMBER TR-0086 (6925-04)-2 7. AUTHOR(e) S. CONTRACT OR GRANT NUMBER(a) Lee W. Aukerman , Frank L. Vernon, Jr., and Yeong Song...Agency, Washington, D.C. (December 1971). 8. D. H. Seib and L. W. Aukerman , "Photodetectors for the 0.1 to 1.0 4m Spectral Region," Advances in

  10. Initial results from the Sherbrooke avalanche photodiode positron tomograph

    SciTech Connect

    Lecomte, R.; Cadorette, J.; Rodrigue, S.; Lapointe, D.; Rouleau, D.; Bentourkia, M.; Yao, R.; Msaki, P.

    1996-06-01

    The design features and engineering constraints of a PET system based on avalanche photodiode (APD) detectors have been described in a previous report. In this paper, the authors present the initial results obtained with the Sherbrooke APD-PET scanner, a very high spatial resolution device designed for dynamic imaging of small and medium-sized laboratory animals such as rats, cats, rabbits and small monkeys. Its physical performance has been evaluated in terms of resolution, sensitivity, count rate, random and scatter fractions, contrast and relative activity recovery as a function of object size. The capabilities of the scanner for biomedical research applications have been demonstrated using phantom and animal studies.

  11. Development of a testbed for flexible a-Si:H photodiode sensing arrays

    NASA Astrophysics Data System (ADS)

    Dominguez, Alfonso; Kunnen, George; Vetrano, Michael; Smith, Joseph; Marrs, Michael; Allee, David R.

    2013-05-01

    Large area, flexible sensing arrays for imaging, biochemical sensing and radiation detection are now possible with the development of flexible active matrix display technology. In particular, large-area flexible imaging arrays can provide considerable advancement in defense and security industries because of their inherent low manufacturing costs and physical plasticity that allows for increased adaptability to non-planar mounting surfaces. For example, a flexible array of photodetectors and lenslets formed into a cylinder could image simultaneously with a 360 degree view without the need for expensive bulky optics or a gimbaled mount. Here we report the design and development of a scalable 16x16 pixel testbed for flexible sensor arrays using commercial-off-the-shelf (COTS) parts and demonstrate the capture of a shadow image with an array of photodiodes and active pixel sensors on a plastic substrate. The image capture system makes use of an array of low-noise, InGaZnO active pixel amplifiers to detect changes in current in 2.4 μm-thick reverse-biased a-Si:H PIN diodes. A thorough characterization of the responsivity, detectivity, and optical gain of an a- Si:H photodiode is also provided. At the back end, analog capture circuitry progressively scans the array and constructs an image based on the electrical activity in each pixel. The use of correlated-double-sampling to remove fixed pattern noise is shown to significantly improve spatial resolution due to process variations. The testbed can be readily adapted for the development of neutron, alpha-particle, or X-ray detection arrays given an appropriate conversion layer.

  12. Hybridization, natural selection, and evolution of reproductive isolation: a 25-years survey of an artificial sympatric area between two mosquito sibling species of the Aedes mariae complex.

    PubMed

    Urbanelli, Sandra; Porretta, Daniele; Mastrantonio, Valentina; Bellini, Romeo; Pieraccini, Giuseppe; Romoli, Riccardo; Crasta, Graziano; Nascetti, Giuseppe

    2014-10-01

    Natural selection can act against maladaptive hybridization between co-occurring divergent populations leading to evolution of reproductive isolation among them. A critical unanswered question about this process that provides a basis for the theory of speciation by reinforcement, is whether natural selection can cause hybridization rates to evolve to zero. Here, we investigated this issue in two sibling mosquitoes species, Aedes mariae and Aedes zammitii, that show postmating reproductive isolation (F1 males sterile) and partial premating isolation (different height of mating swarms) that could be reinforced by natural selection against hybridization. In 1986, we created an artificial sympatric area between the two species and sampled about 20,000 individuals over the following 25 years. Between 1986 and 2011, the composition of mating swarms and the hybridization rate between the two species were investigated across time in the sympatric area. Our results showed that A. mariae and A. zammitii have not completed reproductive isolation since their first contact in the artificial sympatric area. We have discussed the relative role of factors such as time of contact, gene flow, strength of natural selection, and biological mechanisms causing prezygotic isolation to explain the observed results.

  13. Fault tolerant photodiode and photogate active pixel sensors

    NASA Astrophysics Data System (ADS)

    Jung, Cory; Chapman, Glenn H.; La Haye, Michelle L.; Djaja, Sunjaya; Cheung, Desmond Y. H.; Lin, Henry; Loo, Edward; Audet, Yves R.

    2005-03-01

    As the pixel counts of digital imagers increase, the challenge of maintaining high yields and ensuring reliability over an imager"s lifetime increases. A fault tolerant active pixel sensor (APS) has been designed to meet this need by splitting an APS in half and operating both halves in parallel. The fault tolerant APS will perform normally in the no defect case and will produce approximately half the output for single defects. Thus, the entire signal can be recovered by multiplying the output by two. Since pixels containing multiple defects are rare, this design can correct for most defects allowing for higher production yields. Fault tolerant photodiode and photogate APS" were fabricated in 0.18-micron technology. Testing showed that the photodiode APS could correct for optically induced and electrically induced faults, within experimental error. The photogate APS was only tested for optically induced defects and also corrects for defects within experimental error. Further testing showed that the sensitivity of fault tolerant pixels was approximately 2-3 times more sensitive than the normal pixels. HSpice simulations of the fault tolerant APS circuit did not show increased sensitivity, however an equivalent normal APS circuit with twice width readout and row transistors was 1.90 times more sensitive than a normal pixel.

  14. Characteristics of Various Photodiode Structures in CMOS Technology with Monolithic Signal Processing Electronics

    SciTech Connect

    Mukhopadhyay, Sourav; Chandratre, V. B.; Sukhwani, Menka; Pithawa, C. K.

    2011-10-20

    Monolithic optical sensor with readout electronics are needed in optical communication, medical imaging and scintillator based gamma spectroscopy system. This paper presents the design of three different CMOS photodiode test structures and two readout channels in a commercial CMOS technology catering to the need of nuclear instrumentation. The three photodiode structures each of 1 mm{sup 2} with readout electronics are fabricated in 0.35 um, 4 metal, double poly, N-well CMOS process. These photodiode structures are based on available P-N junction of standard CMOS process i.e. N-well/P-substrate, P+/N-well/P-substrate and inter-digitized P+/N-well/P-substrate. The comparisons of typical characteristics among three fabricated photo sensors are reported in terms of spectral sensitivity, dark current and junction capacitance. Among the three photodiode structures N-well/P-substrate photodiode shows higher spectral sensitivity compared to the other two photodiode structures. The inter-digitized P+/N-well/P-substrate structure has enhanced blue response compared to N-well/P-substrate and P+/N-well/P-substrate photodiode. Design and test results of monolithic readout electronics, for three different CMOS photodiode structures for application related to nuclear instrumentation, are also reported.

  15. Locating hybrid individuals in the red wolf (Canis rufus) experimental population area using a spatially targeted sampling strategy and faecal DNA genotyping.

    PubMed

    Adams, Jennifer R; Lucash, Chris; Schutte, Leslie; Waits, Lisette P

    2007-05-01

    Hybridization with coyotes (Canis latrans) continues to threaten the recovery of endangered red wolves (Canis rufus) in North Carolina and requires the development of new strategies to detect and remove coyotes and hybrids. Here, we combine a spatially targeted faecal collection strategy with a previously published reference genotype data filtering method and a genetic test for coyote ancestry to screen portions of the red wolf experimental population area for the presence of nonred wolf canids. We also test the accuracy of our maximum-likelihood assignment test for identifying hybrid individuals using eight microsatellite loci instead of the original 18 loci and compare its performance to the Bayesian approach implemented in newhybrids. We obtained faecal DNA genotypes for 89 samples, 73 of which were matched to 23 known individuals. The performance of two sampling strategies - comprehensive sweep and opportunistic spot-check was evaluated. The opportunistic spot-check sampling strategy required less effort than the comprehensive sweep sampling strategy but identified fewer individuals. Six hybrids or coyotes were detected and five of these individuals were subsequently captured and removed from the population. The accuracy and power of the genetic test for coyote ancestry is decreased when using eight loci; however, nonred wolf canids are identified with high frequency. This combination of molecular and traditional field-based approaches has great potential for addressing the challenge of hybridization in other species and ecosystems.

  16. Back-illuminated GaN/AlGaN visible-blind photodiodes

    NASA Astrophysics Data System (ADS)

    Chen, Liang; Chen, Jun; Bai, Yun; Guo, Liwei; Zhang, Yan; Li, Xiangyang; Gong, Haimei

    2007-12-01

    In recent years, AlGaN semiconductor alloys, with a direct bandgap tunable between 3.4eV and 6.2eV, become the most suitable material for fabricating UV detectors. In this paper, a backside-illuminated visible-blind UV detector based on a GaN/AlGaN p-i-n heterostructure has been successfully fabricated and tested. The p-i-n photodiode structure consists of a 0.7um n-type Al 0.33Ga 0.67N:Si layer grown by metal-organic chemical vapor deposition (MOCVD) onto a low temperature AlN buffer layer on a polished sapphire substrate. On the top of this layer there is a 0.18um undoped GaN active layer and a 0.15um p-type GaN:Mg top layer. Square mesas of area A=1.70×10 -3cm2 were obtained by inductively coupled plasma etching using BCl 3, Ar and Cl II. Standard photolithographic and metallization procedures were also employed to fabricate the devices. The visible blind photodiode exhibits a narrow UV spectral responsibility band peaked at 360nm, with maximum responsibility R=0.21A/W, corresponding to an internal quantum efficiency of 82%. R 0A values up to 2.64×10 8Ω•cm2 were obtained, corresponding to D*=2.65×10 13 cmHz 1/2W -1 at 360nm. The leakage current at zero bias is 5.20×10 -13A. We also examined GaN/AlGaN epitaxial layers by high resolution X-ray diffraction (HRXRD). The rocking curve indicates the multiple layers including p-type layer are in good state, which indicates that the crystalline quality of films is the key of device performances.

  17. Impact ionization engineered avalanche photodiode arrays for free space optical communication

    NASA Astrophysics Data System (ADS)

    Ferraro, Mike S.; Rabinovich, William S.; Clark, William R.; Waters, William D.; Campbell, Joe C.; Mahon, Rita; Vaccaro, Kenneth; Krejca, Brian D.

    2016-03-01

    High sensitivity photodetectors serve two purposes in free space optical communication: data reception and position sensing for pointing, tracking, and stabilization. Because of conflicting performance criteria, two separate detectors are traditionally utilized to perform these tasks but recent advances in the fabrication and development of large area, low noise avalanche photodiode (APD) arrays have enabled these devices to be used both as position sensitive detectors (PSD) and as communications receivers. Combining these functionalities allows for more flexibility and simplicity in optical assembly design without sacrificing the sensitivity and bandwidth performance of smaller, single element data receivers. Beyond eliminating the need to separate the return beam into two separate paths, these devices enable implementation of adaptive approaches to compensate for focal plane beam wander and breakup often seen in highly scintillated terrestrial and maritime optical links. While the Naval Research Laboratory (NRL) and Optogration Inc, have recently demonstrated the performance of single period, InAlAs/InGaAs APD arrays as combined data reception and tracking sensors, an impact ionization engineered (I2E) epilayer design achieves even lower carrier ionization ratios by incorporating multiple multiplication periods engineered to suppress lower ionization rate carriers while enhancing the higher ionization rate carriers of interest. This work presents a three period I2E concentric, five element avalanche photodiode array rated for bandwidths beyond 1GHz with measured carrier ionization ratios of 0.05-0.1 at moderate APD gains. The epilayer design of the device will be discussed along with initial device characterization and high speed performance measurements.

  18. U.S. EPA honors San Francisco Bay Area firm Hybrid Coating Technologies with Green Chemistry Award

    EPA Pesticide Factsheets

    SAN FRANCISCO - Today the U.S. Environmental Protection Agency recognized Hybrid Coating Technologies of Daly City, Calif. with a Presidential Green Chemistry Award for developing a safer, plant-based polyurethane for use on floors, furniture and in

  19. 480 x 8 hybrid HgCdTe infrared focal plane arrays

    NASA Astrophysics Data System (ADS)

    Kobayashi, Masako; Wada, Hideo; Okamura, Toshihiro; Kudo, Jun-ichi; Tanikawa, Kunihiro; Hikida, Soichiro; Miyamoto, Yoshihiro; Miyazaki, Shinji; Yoshida, Yukihiro

    2001-10-01

    This paper explains the technologies used for high-performance long linear arrays based on HgCdTe/CMOS hybrid multiplexers with bidirectional Time Delay and Integration (TDI) functions, and it describes the development of the first high-resolution Forward Looking Infrared (FLIR) system with the SXGA format. Long-wavelength Infrared (LWIR) photodiode arrays are fabricated using liquid-phase epitaxially grown HgCdTe on a CdZnTe substrate. Each photodiode array consists of 480x8-element n+/n-on-p diodes formed by B+ implantation. Each photodiode is surrounded by a crosswise drain diode to define the detection area. The diodes with a 10.3-μm cutoff wavelength had a typical zero-bias resistance of 10 MΩ and a shunt resistance of 1 GΩ. Four CMOS Read Out Integrated Circuits (ROICs) were used for bidirectional TDI and multiplex operations where each ROIC summed up and multiplexed eight signals from 120 channels. The ROIC also includes pixel deselection and gain control circuits along with the corresponding memory and writing means. The Infrared Focal Plane Arrays (IRFPAs) had a typical Noise Equivalent Temperature Difference (NETD) of 18 mK after TDI with F/1.55 optics and 10-μs integration. The FLIR system using the 480x8 IRFPA demonstrated a high spatial resolution of 1280 horizontal lines by 960 vertical lines (SXGA format) and NETD of less than 30 mK. The unique algorithm for image enhancement was successfully confirmed to be efficient.

  20. Responsivity of Diamond X-ray Photodiodes Calibrated at NSLS

    SciTech Connect

    Keister,J.W.; Smedley, J.; Muller, E. M.; Bohon, J.

    2009-09-27

    Single crystal, high purity synthetic diamond is used as photoabsorption and carrier transport medium in x-ray photodiodes. While the thermal / mechanical robustness and high x-ray transmission of diamond make such devices attractive for synchrotron instrumentation, state-of-the-art quality material and electrical interfaces further make such detectors feasible. The present work develops methodology for attaining calculable responsivity (photocurrent yield) over a wide range of photon energies (0.2 to 28 keV) to within 5% accuracy. These methods achieve linear response for up to 0.2 W absorbed x-ray power and response time as low as 1 ns. Details of contact formation / robustness and bias configuration are explored.

  1. Innovative Detection System of Ochratoxin A by Thin Film Photodiodes

    PubMed Central

    Caputo, Domenico; de Cesare, Giampiero; Fanelli, Corrado; Nascetti, Augusto; Ricelli, Alessandra; Scipinotti, Riccardo

    2007-01-01

    In this work we present, for the first time, a rapid, compact and innovative method for detection of Ochratoxin A (OTA) based on hydrogenated amorphous silicon (a-Si:H) sensors. 2 μl of acidified toluene containing OTA at different concentrations were spotted on the silica side of a High Performance Thin Layer Cromatography plate and aligned with a a-Si:H p-i-n photodiode deposited by Plasma Enhanced Chemical Vapor Deposition on a different glass substrate. As an UV radiation excites the mycotoxin, the re-emitted light is detected by the a-Si:H sensor. Results show a very good linearity between OTA concentration and the sensor photocurrent over almost three orders of magnitude. The minimum detected OTA concentration is equal to 0.1ng, showing that the presented system has the potential for a low cost system suitable for the early detection of toxins in foods.

  2. Avalanche photodiode based time-of-flight mass spectrometry

    SciTech Connect

    Ogasawara, Keiichi Livi, Stefano A.; Desai, Mihir I.; Ebert, Robert W.; McComas, David J.; Walther, Brandon C.

    2015-08-15

    This study reports on the performance of Avalanche Photodiodes (APDs) as a timing detector for ion Time-of-Flight (TOF) mass spectroscopy. We found that the fast signal carrier speed in a reach-through type APD enables an extremely short timescale response with a mass or energy independent <2 ns rise time for <200 keV ions (1−40 AMU) under proper bias voltage operations. When combined with a microchannel plate to detect start electron signals from an ultra-thin carbon foil, the APD comprises a novel TOF system that successfully operates with a <0.8 ns intrinsic timing resolution even using commercial off-the-shelf constant-fraction discriminators. By replacing conventional total-energy detectors in the TOF-Energy system, APDs offer significant power and mass savings or an anti-coincidence background rejection capability in future space instrumentation.

  3. Comprehensive analysis of new near-infrared avalanche photodiode structure

    NASA Astrophysics Data System (ADS)

    Czuba, Krzysztof; Jurenczyk, Jaroslaw; Kaniewski, Janusz

    2014-01-01

    The essential steps in simulations of modern separate absorption, grading, charge, and multiplication avalanche photodiode and their results are discussed. All simulations were performed using two commercial technology computer-aided design type software packages, namely Silvaco ATLAS and Crosslight APSYS. Comparison between those two frameworks was made and differences between them were pointed out. Several examples of the influence of changes made in individual layers on overall device characteristics have been shown. Proper selection of models and their parameters as well as its significance on results has been illustrated. Additionally, default values of material parameters were revised and adequate values from the literature were entered. Simulated characteristics of optimized structure were compared with ones obtained from measurements of real devices (e.g., current-voltage curves). Finally, properties of crucial layers in the structure were discussed.

  4. Temperature Control of Avalanche Photodiode Using Thermoelectric Cooler

    NASA Technical Reports Server (NTRS)

    Refaat, Tamer F.; Luck, William S., Jr.; DeYoung, Russell J.

    1999-01-01

    Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrared optical detection applications. Although APDs are compact, rugged, and have an internal gain mechanism that is suitable for low light intensity; their responsivity, and therefore their output, is strongly dependent on the device temperature. Thermoelectric coolers (TEC) offers a suitable solution to this problem. A TEC is a solid state cooling device, which can be controlled by changing its current. TECs are compact and rugged, and they can precisely control the temperature to within 0.1 C with more than a 150 C temperature gradient between its surfaces. In this Memorandum, a proportional integral (PI) temperature controller for APDs using a TEC is discussed. The controller is compact and can successfully cool the APD to almost 0 C in an ambient temperature environment of up to 27 C.

  5. Cesium hafnium chloride scintillator coupled with an avalanche photodiode photodetector

    NASA Astrophysics Data System (ADS)

    Kurosawa, S.; Kodama, S.; Yokota, Y.; Horiai, T.; Yamaji, A.; Shoji, Y.; Král, R.; Pejchal, J.; Ohashi, Y.; Kamada, K.; Nikl, M.; Yoshikawa, A.

    2017-02-01

    Optical and scintillation properties of pure Cs2HfCl6 (CHC) single crystals were investigated. In particular, light output and energy resolution were measured using a Si avalanche photodiode (Si-APD), since the Si-APD has sufficient quantum efficiency of around 70 % at emission wavelength region of CHC around 420 nm. This CHC single crystal grown using the vertical Bridgeman method showed light output of 37,000± 2,000 photons/MeV . The FWHM energy resolution was determined to be 3.7± 0.5× (E/662 keV)‑0.85± 0.03[%], where E [keV] is the gamma-ray energy. Moreover, the temperature dependence of the light output was stable from ‑5 to 30 oC, while the light output increased below ‑10 oC.

  6. Robust Quantum Random Number Generator Based on Avalanche Photodiodes

    NASA Astrophysics Data System (ADS)

    Wang, Fang-Xiang; Wang, Chao; Chen, Wei; Wang, Shuang; Lv, Fu-Sheng; He, De-Yong; Yin, Zhen-Qiang; Li, Hong-Wei; Guo, Guang-Can; Han, Zheng-Fu

    2015-08-01

    We propose and demonstrate a scheme to realize a high-efficiency truly quantum random number generator (RNG) at room temperature (RT). Using an effective extractor with simple time bin encoding method, the avalanche pulses of avalanche photodiode (APD) are converted into high-quality random numbers (RNs) that are robust to slow varying noise such as fluctuations of pulse intensity and temperature. A light source is compatible but not necessary in this scheme. Therefor the robustness of the system is effective enhanced. The random bits generation rate of this proof-of-principle system is 0.69 Mbps with double APDs and 0.34 Mbps with single APD. The results indicate that a high-speed RNG chip based on the scheme is potentially available with an integrable APD array.

  7. Effect of Fabric Cover and Pore Area Distribution of Carbon/Stainless Steel/Polypropylene Hybrid Yarn-Woven Fabric on Electromagnetic Shielding Effectiveness

    NASA Astrophysics Data System (ADS)

    Krishnasamy, Jagatheesan; Ramasamy, Alagirusamy; Das, Apurba; Basu, Ananjan

    2016-06-01

    The electromagnetic shielding behavior of fabrics woven with carbon/stainless steel/polypropylene (C/SS/PP) hybrid yarns were investigated in the frequency range of 300 kHz to 1.5 GHz. This study mainly emphasizes the electromagnetic shielding behavior of C/SS/PP hybrid yarn fabric and the effect of different fabric parameters such as pick density, fabric architecture and number of fabric layers on shielding effectiveness (SE) of fabrics with C/SS/PP hybrid yarns. The SE of fabric samples were tested by a vector network analyzer using a coaxial transmission line tester. In addition, surface images of different fabric structures were examined to appreciate the effect of yarn floats on the shielding behavior of fabrics. From the SE test, it was observed that an increase in pick density increases the SE of C/SS/PP hybrid yarn fabric due to addition of carbon and SS content in the fabric. Besides, the fabric cover and pore area distribution are also changed for varying pick densities. Essentially, a fabric's architecture plays an important role in the fabric cover and pore area distribution. The one-end float (1/1 plain) fabric of 6.3 ppcm provides higher shielding of 88.44 dB than a 4-end (4/1 twill) or 7-end float (8-end satin) fabrics of 6.3 ppcm. Moreover, an increase in the number of fabric layers also improves the SE of fabrics. The developed C/SS/PP hybrid yarn fabric can be used for shielding wireless transmissions, radar transmissions and for shielding panels.

  8. Conceptual Design of Large Surface Area Porous Polymeric Hybrid Media Based on Polyhedral Oligomeric Silsesquioxane Precursors: Preparation, Tailoring of Porous Properties, and Internal Surface Functionalization

    PubMed Central

    2013-01-01

    We report on the preparation of hybrid, organic–inorganic porous materials derived from polyhedral oligomeric vinylsilsesquioxanes (vinylPOSS) via a single-step molding process. The monolithic, large surface area materials are studied with a particular focus on morphology and porous properties. Radical vinyl polymerization of the nanometer-sized POSS building blocks is therefore utilized via a thermally initiated route and in porogenic diluents such as tetrahydrofuran and polyethylene glycols of varying composition. Careful choice of these porogenic solvents and proper choice of initiator concentration lead to highly porous monolithic building entities which show a rigid, 3D-adhered, porous structure, macroscopically adapting the shape of a given mold. The described materials reflect Brunauer–Emmett–Teller (BET) surface areas of 700 m2/g or more and maximum tunable mesopore volumes of up to 2 cm3/g. Experimental investigations demonstrate the option to tailor nanoporosity and macroporosity in the single-step free-radical polymerization process. While studies on the influence of the used porogenic solvents reveal tuneability of pore sizes due to the unique pore formation process, tailored existence of residual vinyl groups allows facile postpolymerization modification of the highly porous, large surface area hybrid materials exploited via thiol–ene “click” chemistry. Our developed, simply realizable preparation process explores a new route to derive porous organic–inorganic hybrid adsorbents for a wide variety of applications such as extraction, separation science, and catalysis. PMID:23489022

  9. Load Frequency Control of a Two-Area Thermal-Hybrid Power System Using a Novel Quasi-Opposition Harmony Search Algorithm

    NASA Astrophysics Data System (ADS)

    Mahto, Tarkeshwar; Mukherjee, V.

    2016-09-01

    In the present work, a two-area thermal-hybrid interconnected power system, consisting of a thermal unit in one area and a hybrid wind-diesel unit in other area is considered. Capacitive energy storage (CES) and CES with static synchronous series compensator (SSSC) are connected to the studied two-area model to compensate for varying load demand, intermittent output power and area frequency oscillation. A novel quasi-opposition harmony search (QOHS) algorithm is proposed and applied to tune the various tunable parameters of the studied power system model. Simulation study reveals that inclusion of CES unit in both the areas yields superb damping performance for frequency and tie-line power deviation. From the simulation results it is further revealed that inclusion of SSSC is not viable from both technical as well as economical point of view as no considerable improvement in transient performance is noted with its inclusion in the tie-line of the studied power system model. The results presented in this paper demonstrate the potential of the proposed QOHS algorithm and show its effectiveness and robustness for solving frequency and power drift problems of the studied power systems. Binary coded genetic algorithm is taken for sake of comparison.

  10. Gathering effect on dark current for CMOS fully integrated-, PIN-photodiodes

    NASA Astrophysics Data System (ADS)

    Teva, Jordi; Jonak-Auer, Ingrid; Schrank, Franz; Kraft, Jochen; Siegert, Joerg; Wachmann, Ewald

    2010-02-01

    PIN photodiodes are semiconductor devices widely used in a huge range of applications, such as photoconductors, charge-coupled devices, and pulse oximeters. The possibility to combine and to integrate the fabrication of the sensor with its signal conditioning circuitry in a CMOS process flow opens the window to device miniaturization enhancing its properties and lowering the production and assembly costs. This paper presents the design and characterization of silicon based PIN photodiodes integrated in a CMOS commercial process. A high-resistivity, low impurity float zone substrate is chosen as the start material for the PIN photodiode array fabrication in order to fabricate devices with a minimum dark current. The photodiodes in the array are isolated by a guard ring consisting of a n+-p+ diffusions. However, the introduction of the guard ring design, necessary for photodiode-to-photodiode isolation, leads to an increase of the photodiodes dark current. In this article, the new parasitic term on the dark current is identified, formulated, modelled and experimental proven and has finally been used for an accurate design of the guard ring.

  11. High-contrast X-ray micro-tomography of low attenuation samples using large area hybrid semiconductor pixel detector array of 10 × 5 Timepix chips

    NASA Astrophysics Data System (ADS)

    Karch, J.; Krejci, F.; Bartl, B.; Dudak, J.; Kuba, J.; Kvacek, J.; Zemlicka, J.

    2016-01-01

    State-of-the-art hybrid pixel semiconductor detectors provide excellent imaging properties such as unlimited dynamic range, high spatial resolution, high frame rate and energy sensitivity. Nevertheless, a limitation in the use of these devices for imaging has been the small sensitive area of a few square centimetres. In the field of microtomography we make use of a large area pixel detector assembled from 50 Timepix edgeless chips providing fully sensitive area of 14.3 × 7.15 cm2. We have successfully demonstrated that the enlargement of the sensitive area enables high-quality tomographic measurements of whole objects with high geometrical magnification without any significant degradation in resulting reconstructions related to the chip tilling and edgeless sensor technology properties. The technique of micro-tomography with the newly developed large area detector is applied for samples formed by low attenuation, low contrast materials such a seed from Phacelia tanacetifolia, a charcoalified wood sample and a beeswax seal sample.

  12. The quantum efficiency of HgCdTe photodiodes in relation to the direction of illumination and to their geometry

    NASA Technical Reports Server (NTRS)

    Rosenfeld, D.; Bahir, G.

    1993-01-01

    A theoretical study of the effect of the direction of the incident light on the quantum efficiency of homogeneous HgCdTe photodiodes suitable for sensing infrared radiation in the 8-12 microns atmospheric window is presented. The probability of an excess minority carrier to reach the junction is derived as a function of its distance from the edge of the depletion region. Accordingly, the quantum efficiency of photodiodes is presented for two geometries. In the first, the light is introduced directly to the area in which it is absorbed (opaque region), while in the second, the light passes through a transparent region before it reaches the opaque region. Finally, the performance of the two types of diodes is analyzed with the objective of finding the optimal width of the absorption area. The quantum efficiency depends strongly on the way in which the light is introduced. The structure in which the radiation is absorbed following its crossing the transparent region is associated with both higher quantum efficiency and homogeneity. In addition, for absorption region widths higher than a certain minimum, the quantum efficiency in this case is insensitive to the width of the absorption region.

  13. Evaluation of high quantum efficiency silicon photodiodes for calibration in the 400 nm to 900 nm spectral region

    NASA Technical Reports Server (NTRS)

    Jorquera, Carlos; Bruegge, Carol; Duval, Valerie

    1992-01-01

    The reflectance and internal quantum efficiency (QE) of three single-element photodiodes are determined using two different light-trapping devices. The QED-200 light trapping device which is based on inversion layer photodiodes exhibits the best performance within the short wavelengths of the visible spectrum (VIS), while the A-O device based on p-n photodiodes, performs best in the long wave VIS up to 950 nm. The combination of the two light-traps provides nearly 100 percent external QE coverage from 400 to 950 nm. The reflectances and internal QE were determined within this spectral range for three photodiodes: UV100, an inversion layer photodiode; X-UV100, a shallow diffused n-p photodiode; and 10DPI/SB, a blue-enhanced p-n photodiode.

  14. Improving an organic photodiode by incorporating a tunnel barrier between the donor and acceptor layers

    NASA Astrophysics Data System (ADS)

    Campbell, I. H.; Crone, B. K.

    2012-07-01

    We demonstrate increased photocurrent quantum efficiency in a model donor/acceptor (tetracene/C60) photodiode by incorporating an insulating tunnel barrier between the tetracene and C60 layers. Photodiode efficiency results from the interplay of a number of processes which add to or subtract from the overall device efficiency. The positive rates are those of exciton dissociation and charge separation, the negative rates include exciton and charge transfer complex recombination. We show that by introducing a thin insulating layer between the donor and acceptor layers in a photodiode, we can modify the exciton dissociation and charge transfer complex recombination rates and improve device performance.

  15. High performance x-ray imaging detectors on foil using solution-processed organic photodiodes with extremely low dark leakage current (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Kumar, Abhishek; Moet, Date; van der Steen, Jan Laurens; van Breemen, Albert; Shanmugam, Santhosh; Gilot, Jan; Andriessen, Ronn; Simon, Matthias; Ruetten, Walter; Douglas, Alexander; Raaijmakers, Rob; Malinowski, Pawel E.; Myny, Kris; Gelinck, Gerwin

    2015-10-01

    High performance X-ray imaging detectors on foil using solution-processed organic photodiodes with extremely low dark leakage current Abhishek Kumara, Date Moeta, Albert van Breemena, Santhosh Shanmugama, Jan-Laurens van der Steena, Jan Gilota, Ronn Andriessena, Matthias Simonb, Walter Ruettenb, Alexander U. Douglasb, Rob Raaijmakersc, Pawel E. Malinowskid, Kris Mynyd and Gerwin H. Gelincka,e a. Holst Centre/TNO, High Tech Campus 31, Eindhoven 5656 AE, The Netherlands b. Philips Research, High Tech Campus 34, 5656 AE Eindhoven, The Netherlands c. Philips Healthcare, Veenpluis 6-8, 5684 PC Best, The Netherlands d. Department of Large Area Electronics, imec vzw, Kapeldreef 75, Leuven B3001, Belgium e. Applied Physics Department, TU Eindhoven, Eindhoven, The Netherlands We demonstrate high performance X-ray imaging detectors on foil suitable for medical grade X-ray imaging applications. The detectors are based on solution-processed organic photodiodes forming bulk-heterojunctions from photovoltaic donor and acceptor blend. The organic photodiodes are deposited using an industrially compatible slot die coating technique with end of line processing temperature below 100°C. These photodiodes have extremely low dark leakage current density of 10-7 mA/cm2 at -2V bias with very high yield and have peak absorption around 550 nm wavelength. We combine these organic photodiodes with high mobility metal oxide semiconductor based thin film transistor arrays with high pixel resolution of 200ppi on thin plastic substrate. When combined with a typical CsI(TI) scintillator material on top, they are well suited for low dose X-ray imaging applications. The optical crosstalk is insignificant upto resolution of 200 ppi despite the fact that the photodiode layer is one continuous layer and is non-pixelated. Low processing temperatures are another key advantage since they can be fabricated on plastic substrate. This implies that we can make X-ray detectors on flexible foil. Those

  16. A hybrid WDM/OCDMA ring with a dynamic add/drop function based on Fourier code for local area networks.

    PubMed

    Choi, Yong-Kyu; Hosoya, Kenta; Lee, Chung Ghiu; Hanawa, Masanori; Park, Chang-Soo

    2011-03-28

    We propose and experimentally demonstrate a hybrid WDM/OCDMA ring with a dynamic add/drop function based on Fourier code for local area networks. Dynamic function is implemented by mechanically tuning the Fourier encoder/decoder for optical code division multiple access (OCDMA) encoding/decoding. Wavelength division multiplexing (WDM) is utilized for node assignment and 4-chip Fourier code recovers the matched signal from the codes. For an optical source well adapted to WDM channels and its short optical pulse generation, reflective semiconductor optical amplifiers (RSOAs) are used with a fiber Bragg grating (FBG) and gain-switched. To demonstrate we experimentally investigated a two-node hybrid WDM/OCDMA ring with a 4-chip Fourier encoder/decoder fabricated by cascading four FBGs with the bit error rate (BER) of <10(-9) for the node span of 10.64 km at 1.25 Gb/s.

  17. Nano-Multiplication-Region Avalanche Photodiodes and Arrays

    NASA Technical Reports Server (NTRS)

    Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

    2008-01-01

    Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be

  18. High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

    PubMed

    Li, Zhi; Fu, Yang; Piels, Molly; Pan, Huapu; Beling, Andreas; Bowers, John E; Campbell, Joe C

    2011-12-12

    We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias.

  19. Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection.

    PubMed

    Kang, Y; Zadka, M; Litski, S; Sarid, G; Morse, M; Paniccia, M J; Kuo, Y-H; Bowers, J; Beling, A; Liu, H D; McIntosh, D C; Campbell, J; Pauchard, A

    2008-06-23

    We designed and fabricated Ge/Si avalanche photodiodes grown on silicon substrates. The mesa-type photodiodes exhibit a responsivity at 1310 nm of 0.54 A/W, a breakdown voltage thermal coefficient of 0.05%/ degrees C, a 3 dB-bandwidth of 10 GHz. The gain-bandwidth product was measured as 153 GHz. The effective k value extracted from the excess noise factor was 0.1.

  20. Soft X-ray detection and photon counting spectroscopy with commercial 4H-SiC Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Zhao, S.; Gohil, T.; Lioliou, G.; Barnett, A. M.

    2016-09-01

    The results of electrical characterisation and X-ray detection measurements of two different active area (0.06 mm2 and 0.5 mm2) commercial 4H-SiC Schottky photodiodes at room temperature are reported. The devices exhibited low dark currents (less than 10 pA) even at a high electric field strengths (403 kV/cm for 0.06 mm2 diodes; 227 kV/cm for 0.5 mm2 diodes). The results of the X-ray measurements indicate that the diodes can be used as photon counting spectroscopic X-ray detectors with modest energy resolutions: FWHM at 5.9 keV of 1.8 keV and 3.3 keV, for the 0.06 mm2 and 0.5 mm2 devices, respectively. Noise analysis of the photodiodes coupled to a custom low noise charge sensitive preamplifier is also presented.

  1. Numerical analysis of the temperature field in silicon avalanche photodiode by millisecond laser irradiation

    NASA Astrophysics Data System (ADS)

    Wang, Di; Jin, Guangyong; Wei, Zhi; Zhao, Hongyu

    2016-10-01

    Recent years, millisecond laser become a research hotspot. Avalanche photodiode (APD) based on silicon structure has excellent characteristics such as low noise and high-sensitivity. It is key components in receives for long-haul high-bit-rate optical communication system. The failure mechanism of silicon APD remains quite unknown, although some silicon p-i-n photodiode failure modes have been speculated. The COMSOL Multiphysics finite element analysis software was utilized in this paper. And the 2D model, which based on heat conduction equation, was established to simulate the temperature field of the silicon avalanche photodiode irradiated by millisecond laser. The model presented in the following section is a work which considers only melting of silicon by a millisecond laser pulse. The temperature dependences of material properties are taken into account, which has a great influence on the temperature fields indicated by the numerical results. The pulsed laser-induced transient temperature fields in silicon avalanche photodiode are obtained, which will be useful in the research on the mechanism of interactions between millisecond laser and photodiode. The evolution of temperature at the central point of the top surface, the temperature distribution along the radial direction in the end of laser irradiation and the temperature distribution along the axial direction in the end of laser irradiation were considered. Meanwhile, the fluence threshold value was obtained through the model. The conclusions had a reference value for revealing the mechanism of interactions between millisecond laser and the silicon avalanche photodiode.

  2. Avalanche photodiode photon counting receivers for space-borne lidars

    NASA Technical Reports Server (NTRS)

    Sun, Xiaoli; Davidson, Frederic M.

    1991-01-01

    Avalanche photodiodes (APD) are studied for uses as photon counting detectors in spaceborne lidars. Non-breakdown APD photon counters, in which the APD's are biased below the breakdown point, are shown to outperform: (1) conventional APD photon counters biased above the breakdown point; (2) conventional APD photon counters biased above the breakdown point; and (3) APD's in analog mode when the received optical signal is extremely weak. Non-breakdown APD photon counters were shown experimentally to achieve an effective photon counting quantum efficiency of 5.0 percent at lambda = 820 nm with a dead time of 15 ns and a dark count rate of 7000/s which agreed with the theoretically predicted values. The interarrival times of the counts followed an exponential distribution and the counting statistics appeared to follow a Poisson distribution with no after pulsing. It is predicted that the effective photon counting quantum efficiency can be improved to 18.7 percent at lambda = 820 nm and 1.46 percent at lambda = 1060 nm with a dead time of a few nanoseconds by using more advanced commercially available electronic components.

  3. Characterization of midwave infrared InSb avalanche photodiode

    SciTech Connect

    Abautret, J. Evirgen, A.; Perez, J. P.; Christol, P.; Rothman, J.; Cordat, A.

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  4. High Response in a Tellurium-Supersaturated Silicon Photodiode

    NASA Astrophysics Data System (ADS)

    Wang, Xi-Yuan; Huang, Yong-Guang; Liu, De-Wei; Zhu, Xiao-Ning; Zhu, Hong-Liang

    2013-03-01

    Single crystalline silicon supersaturated with tellurium are formed by ion implantation followed by excimer nanosecond pulsed laser melting (PLM). The lattice damaged by ion implantation is restored during the PLM process, and dopants are effectively activated. The hyperdoped layer exhibits high and broad optical absorption from 400 to 2500nm. The n+ p photodiodes fabricated from these materials show high response (6.9A/W at 1000nm) with reverse bias 12 V at room temperature. The corresponding cut-off wavelength is 1258nm. The amount of gain and extended cut-off wavelength both increase with increasing reverse bias voltage; above 100% external quantum efficiency is observed even at a reverse bias of 1 V. The cut-off wavelength with 0 V bias is shorter than the commercial silicon detector. This implies that the Burstein-Moss shift is due to hyperdoping. The amount of the extended cut-off wavelength increases with increasing reverse bias voltage, suggesting existence of the Franz—Keldysh effect.

  5. New gamma detector modules based on micropixel avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Ahmadov, F.; Ahmadov, G.; Guliyev, E.; Madatov, R.; Sadigov, A.; Sadygov, Z.; Suleymanov, S.; Akberov, R.; Nuriyev, S.; Zerrouk, F.

    2017-01-01

    In this paper presented the results of the ionizing radiation detector modules, which developed on the basis of a new generation of micropixel avalanche photodiode (MAPD) of MAPD-3NK type. The samples were produced in cooperation with the Zecotek Photonics and characterized by the following parameters: sensitive area—3.7 mm × 3.7 mm, density of pixels—10000 pixels/mm2, photon detection efficiency—35-40% (at wavelength of 450-550 nm) and operation voltage—91 V. The beta particle and gamma ray detection performance of MAPD with different single scintillation crystal such as NaI, LFS and p-terphenyl was investigated. The gamma ray detector modules demonstrated a perfect linear behavior of detected signal amplitudes as a function of the gamma ray energy (from 26.3 keV up to 1.33 MeV). Energy resolution for 662 keV gamma rays was 11.2% and the minimum detectable energy was 26.3 keV.

  6. Measurement of Radiation - Light Field Congruence using a Photodiode Array

    NASA Astrophysics Data System (ADS)

    Balderson, Michael J.

    Improved treatment techniques in radiation therapy provide incentive to reduce treatment margins, thereby increasing the necessity for more accurate geometrical setup of the linear accelerator and accompanying components. In this thesis, we describe the development of a novel device that enables precise and automated measurement of radiation-light field congruence of medical linear accelerators for the purpose of improving setup accuracy, and standardizing repeated quality control activities. The device consists of a silicon photodiode array, an evaluation board, a data acquisition card, and a laptop. Using the device, we show that the radiation-light field congruence for both 6 and 15 MV beams is within 2 mm on a Varian Clinac 21 EX medical linear accelerator. Because measurements are automated, ambiguities resulting from observer variability are removed, greatly improving the reproducibility of measurements over time and across observers. We expect the device to be useful in providing consistent measurements on linear accelerators used for stereotactic radiosurgery, during the commissioning of new linear accelerators, and as an alternative to film or other commercially available devices for performing monthly or annual quality control checks.

  7. Characterization of Advanced Avalanche Photodiodes for Water Vapor Lidar Receivers

    NASA Technical Reports Server (NTRS)

    Refaat, Tamer F.; Halama, Gary E.; DeYoung, Russell J.

    2000-01-01

    Development of advanced differential absorption lidar (DIAL) receivers is very important to increase the accuracy of atmospheric water vapor measurements. A major component of such receivers is the optical detector. In the near-infrared wavelength range avalanche photodiodes (APD's) are the best choice for higher signal-to-noise ratio, where there are many water vapor absorption lines. In this study, characterization experiments were performed to evaluate a group of silicon-based APD's. The APD's have different structures representative of different manufacturers. The experiments include setups to calibrate these devices, as well as characterization of the effects of voltage bias and temperature on the responsivity, surface scans, noise measurements, and frequency response measurements. For each experiment, the setup, procedure, data analysis, and results are given and discussed. This research was done to choose a suitable APD detector for the development of an advanced atmospheric water vapor differential absorption lidar detection system operating either at 720, 820, or 940 nm. The results point out the benefits of using the super low ionization ratio (SLIK) structure APD for its lower noise-equivalent power, which was found to be on the order of 2 to 4 fW/Hz(sup (1/2)), with an appropriate optical system and electronics. The water vapor detection systems signal-to-noise ratio will increase by a factor of 10.

  8. ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

    NASA Technical Reports Server (NTRS)

    Vasile, Stefan; Lipson, Jerold

    2012-01-01

    The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

  9. Enhanced Red and Near Infrared Detection in Flow Cytometry Using Avalanche Photodiodes

    PubMed Central

    Lawrence, William G.; Varadi, Gyula; Entine, Gerald; Podniesinski, Edward; Wallace, Paul K.

    2008-01-01

    Background Polychromatic flow cytometry enables detailed identification of cell phenotype using multiple fluorescent parameters. The photomultiplier tubes used to detect fluorescence in current instruments limit the sensitivity in the long wavelength spectral range. We demonstrate the flow cytometric applications of silicon avalanche photodiodes, which have improved red sensitivity and a working fluorescence detection range beyond 1000 nm. Methods A comparison of the wavelength dependent performance of the avalanche photodiode and photomultiplier tube was carried out using pulsed light emitting diode sources, calibrated test beads and biological samples. A breadboard flow cytometer test bench was constructed to compare the performance of photomultiplier tubes and avalanche photodiode detectors. The avalanche photodiode used an additional amplifier stage to match the internal gain of the photomultiplier tube. Results The resolution of the avalanche photodiode and photomultiplier tube was compared for flow cytometry applications using a pulsed light emitting diode source over the 500 nm to 1060 nm spectral range. These measurements showed the relative changes in the signal to noise performance of the APD and PMT over a broad spectral range. Both the avalanche photodiode and photomultiplier tubes were used to measure the signal to noise response for a set of 6 peak calibration beads over the 530 to 800 nm wavelength range. CD4 positive cells labeled with antibody conjugated phycoerythrin or 800 nm quantum dots were identified by simultaneous detection using the avalanche photodiode and the photomultiplier tube. The ratios of the intensities of the CD4− and CD4+ populations were found to be similar for both detectors in the visible wavelengths, but only the avalanche photodiode was able to separate these populations at wavelengths above 800 nm. Conclusions These measurements illustrate the differences in APD and PMT performance at different wavelengths and signal

  10. Photodiode Preamplifier for Laser Ranging With Weak Signals

    NASA Technical Reports Server (NTRS)

    Abramovici, Alexander; Chapsky, Jacob

    2007-01-01

    An improved preamplifier circuit has been designed for processing the output of an avalanche photodiode (APD) that is used in a high-resolution laser ranging system to detect laser pulses returning from a target. The improved circuit stands in contrast to prior such circuits in which the APD output current pulses are made to pass, variously, through wide-band or narrow-band load networks before preamplification. A major disadvantage of the prior wide-band load networks is that they are highly susceptible to noise, which degrades timing resolution. A major disadvantage of the prior narrow-band load networks is that they make it difficult to sample the amplitudes of the narrow laser pulses ordinarily used in ranging. In the improved circuit, a load resistor is connected to the APD output and its value is chosen so that the time constant defined by this resistance and the APD capacitance is large, relative to the duration of a laser pulse. The APD capacitance becomes initially charged by the pulse of current generated by a return laser pulse, so that the rise time of the load-network output is comparable to the duration of the return pulse. Thus, the load-network output is characterized by a fast-rising leading edge, which is necessary for accurate pulse timing. On the other hand, the resistance-capacitance combination constitutes a lowpass filter, which helps to suppress noise. The long time constant causes the load network output pulse to have a long shallow-sloping trailing edge, which makes it easy to sample the amplitude of the return pulse. The output of the load network is fed to a low-noise, wide-band amplifier. The amplifier must be a wide-band one in order to preserve the sharp pulse rise for timing. The suppression of noise and the use of a low-noise amplifier enable the ranging system to detect relatively weak return pulses.

  11. Advanced active quenching circuits for single-photon avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Stipčević, M.; Christensen, B. G.; Kwiat, P. G.; Gauthier, D. J.

    2016-05-01

    Commercial photon-counting modules, often based on actively quenched solid-state avalanche photodiode sensors, are used in wide variety of applications. Manufacturers characterize their detectors by specifying a small set of parameters, such as detection efficiency, dead time, dark counts rate, afterpulsing probability and single photon arrival time resolution (jitter), however they usually do not specify the conditions under which these parameters are constant or present a sufficient description. In this work, we present an in-depth analysis of the active quenching process and identify intrinsic limitations and engineering challenges. Based on that, we investigate the range of validity of the typical parameters used by two commercial detectors. We identify an additional set of imperfections that must be specified in order to sufficiently characterize the behavior of single-photon counting detectors in realistic applications. The additional imperfections include rate-dependence of the dead time, jitter, detection delay shift, and "twilighting." Also, the temporal distribution of afterpulsing and various artifacts of the electronics are important. We find that these additional non-ideal behaviors can lead to unexpected effects or strong deterioration of the system's performance. Specifically, we discuss implications of these new findings in a few applications in which single-photon detectors play a major role: the security of a quantum cryptographic protocol, the quality of single-photon-based random number generators and a few other applications. Finally, we describe an example of an optimized avalanche quenching circuit for a high-rate quantum key distribution system based on time-bin entangled photons.

  12. Size- and shape-controlled conversion of tungstate-based inorganic-organic hybrid belts to WO3 nanoplates with high specific surface areas.

    PubMed

    Chen, Deliang; Gao, Lian; Yasumori, Atsuo; Kuroda, Kazuyuki; Sugahara, Yoshiyuki

    2008-10-01

    Two-dimensional monoclinic WO(3) nanoplates with high specific surface areas are synthesized through a novel conversion process using tungstate-based inorganic-organic hybrid micro/nanobelts as precursors. The process developed involves a topochemical transformation of tungstate-based inorganic-organic hybrid belts into WO(3) nanoplates via an intermediate product of H(2)WO(4) nanoplates, utilizing the similarity of the W-O octahedral layers in both H(2)WO(4) and WO(3). The as-obtained WO(3) nanoplates show a single-crystalline nanostructure with the smallest side along the [001] direction. The WO(3) nanoplates are 200-500 nm x 200-500 nm x 10-30 nm in size, and their specific surface areas are up to 180 m(2) g(-1). Photocatalytic measurements of visible-light-driven oxidation of water for O(2) generation in the presence of Ag(+) ions indicate that the activity of the as-obtained WO(3) nanoplates is one order of magnitude higher than that of commercially available WO(3) powders.

  13. A room temperature LSO/PIN photodiode PET detector module that measures depth of interaction

    SciTech Connect

    Moses, W.W.; Derenzo, S.E.; Melcher, C.L.; Manente, R.A.

    1994-11-01

    We present measurements of a 4 element PET detector module that uses a 2{times}2 array of 3 mm square PIN photodiodes to both measure the depth of interaction (DOI) and identify the crystal of interaction. Each photodiode is coupled to one end of a 3{times}3{times}25 mm LSO crystal, with the opposite ends of all 4 crystals attached to a single PMT that provides a timing signal and initial energy discrimination. Each LSO crystal is coated with a {open_quotes}lossy{close_quotes} reflector, so the ratio of light detected in the photodiode and PMT depends on the position of interaction in the crystal, and is used to determine this position on an event by event basis. This module is operated at +25{degrees}C with a photodiode amplifier peaking time of 2 {mu}s. When excited by a collimated beam of 511 keV photons at the photodiode end of the module (i.e. closest to the patient), the DOI resolution is 4 mm fwhm and the crystal of interaction is identified correctly 95% of the time. When excited at the opposite end of the module, the DOI resolution is 13 mm fwhm and the crystal of interaction is identified correctly 73% of the time. The channel to channel variations in performance are minimal.

  14. Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

    NASA Astrophysics Data System (ADS)

    Hyun, H. J.; Anderson, T.; Angelaszek, D.; Baek, S. J.; Copley, M.; Coutu, S.; Han, J. H.; Huh, H. G.; Hwang, Y. S.; Im, S.; Jeon, H. B.; Kah, D. H.; Kang, K. H.; Kim, H. J.; Kim, K. C.; Kwashnak, K.; Lee, J.; Lee, M. H.; Link, J. T.; Lutz, L.; Mitchell, J. W.; Nutter, S.; Ofoha, O.; Park, H.; Park, I. H.; Park, J. M.; Patterson, P.; Seo, E. S.; Wu, J.; Yoon, Y. S.

    2015-07-01

    The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm2 at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests.

  15. Aerosol optical depth as observed by the Mars Science Laboratory REMS UV photodiodes

    NASA Astrophysics Data System (ADS)

    Smith, Michael D.; Zorzano, María-Paz; Lemmon, Mark; Martín-Torres, Javier; Mendaza de Cal, Teresa

    2016-12-01

    Systematic observations taken by the REMS UV photodiodes on a daily basis throughout the landed Mars Science Laboratory mission provide a highly useful tool for characterizing aerosols above Gale Crater. Radiative transfer modeling is used to model the approximately 1.75 Mars Years of observations taken to date taking into account multiple scattering from aerosols and the extended field of view of the REMS UV photodiodes. The retrievals show in detail the annual cycle of aerosol optical depth, which is punctuated with numerous short timescale events of increased optical depth. Dust deposition onto the photodiodes is accounted for by comparison with aerosol optical depth derived from direct imaging of the Sun by Mastcam. The effect of dust on the photodiodes is noticeable, but does not dominate the signal. Cleaning of dust from the photodiodes was observed in the season around Ls=270°, but not during other seasons. Systematic deviations in the residuals from the retrieval fit are indicative of changes in aerosol effective particle size, with larger particles present during periods of increased optical depth. This seasonal dependence of aerosol particle size is expected as dust activity injects larger particles into the air, while larger aerosols settle out of the atmosphere more quickly leading to a smaller average particle size over time.

  16. Aerosol Optical Depth as Observed by the Mars Science Laboratory REMS UV Photodiodes

    NASA Technical Reports Server (NTRS)

    Smith, M. D.; Zorzano, M.-P.; Lemmon, M.; Martin-Torres, J.; Mendaza de Cal, T.

    2017-01-01

    Systematic observations taken by the REMS UV photodiodes on a daily basis throughout the landed Mars Science Laboratory mission provide a highly useful tool for characterizing aerosols above Gale Crater. Radiative transfer modeling is used to model the approximately two Mars Years of observations taken to date taking into account multiple scattering from aerosols and the extended field of view of the REMS UV photodiodes. The retrievals show in detail the annual cycle of aerosol optical depth, which is punctuated with numerous short timescale events of increased optical depth. Dust deposition onto the photodiodes is accounted for by comparison with aerosol optical depth derived from direct imaging of the Sun by Mastcam. The effect of dust on the photodiodes is noticeable, but does not dominate the signal. Cleaning of dust from the photodiodes was observed in the season around Ls=270deg, but not during other seasons. Systematic deviations in the residuals from the retrieval fit are indicative of changes in aerosol effective particle size, with larger particles present during periods of increased optical depth. This seasonal dependence of aerosol particle size is expected as dust activity injects larger particles into the air, while larger aerosols settle out of the atmosphere more quickly leading to a smaller average particle size over time. A full description of these observations, the retrieval algorithm, and the results can be found in Smith et al. (2016).

  17. InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.

    PubMed

    Natrella, Michele; Rouvalis, Efthymios; Liu, Chin-Pang; Liu, Huiyun; Renaud, Cyril C; Seeds, Alwyn J

    2012-08-13

    We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test devices have been fabricated and characterised; the devices exhibited 0.1 A/W responsivity at 1550 nm, 12.5 GHz -3 dB bandwidth and -5.8 dBm output power at 10 GHz for a photocurrent of 4.8 mA. The use of Solid Source Molecular Beam Epitaxy enables the major issue associated with the unintentional diffusion of zinc in Metal Organic Vapour Phase Epitaxy to be overcome and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of Gas Source Molecular Beam Epitaxy.

  18. High-performance fused indium gallium arsenide/silicon photodiode

    NASA Astrophysics Data System (ADS)

    Kang, Yimin

    Modern long haul, high bit rate fiber-optic communication systems demand photodetectors with high sensitivity. Avalanche photodiodes (APDs) exhibit superior sensitivity performance than other types of photodetectors by virtual of its internal gain mechanism. This dissertation work further advances the APD performance by applying a novel materials integration technique. It is the first successful demonstration of wafer fused InGaAs/Si APDs with low dark current and low noise. APDs generally adopt separate absorption and multiplication (SAM) structure, which allows independent optimization of materials properties in two distinct regions. While the absorption material needs to have high absorption coefficient in the target wavelength range to achieve high quantum efficiency, it is desirable for the multiplication material to have large discrepancy between its electron and hole ionization coefficients to reduce noise. According to these criteria, InGaAs and Si are the ideal materials combination. Wafer fusion is the enabling technique that makes this theoretical ideal an experimental possibility. APDs fabricated on the fused InGaAs/Si wafer with mesa structure exhibit low dark current and low noise. Special device fabrication techniques and high quality wafer fusion reduce dark current to nano ampere level at unity gain, comparable to state-of-the-art commercial III/V APDs. The small excess noise is attributed to the large difference in ionization coefficients between electrons and holes in silicon. Detailed layer structure designs are developed specifically for fused InGaAs/Si APDs based on principles similar to those used in traditional InGaAs/InP APDs. An accurate yet straightforward technique for device structural parameters extraction is also proposed. The extracted results from the fabricated APDs agree with device design parameters. This agreement also confirms that the fusion interface has negligible effect on electric field distributions for devices fabricated

  19. Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

    SciTech Connect

    Siwak, N. P.; Fan, X. Z.; Ghodssi, R.; Kanakaraju, S.; Richardson, C. J. K.

    2014-10-06

    An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We have fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.

  20. Photosensitivity of Te-doped silicon photodiodes fabricated using femtosecond laser irradiation.

    PubMed

    Li, Rui; Du, Lingyan; Tang, Fei; Jiang, Yadong; Wu, Zhiming

    2016-12-20

    Microstructured Te-doped silicon is prepared via a femtosecond laser irradiating Si coated with Si-Te bilayer films, and photodiodes are successfully fabricated from this material. The samples are thermally annealed at 773 K for three different time durations. The effects of annealing time on microstructures, infrared absorptance, and photosensitivity of Te-doped silicon are investigated. From the scanning electronic microscope images and the optical absorptance spectra, the results show that the infrared absorptance decreases with the increase of annealing time durations, while the infrared photoresponse follows an opposite tendency. At 1064 nm, the responsivity achieves 2.4836 A/W at -10  V reverse bias for the Te-doped silicon photodiode annealed at 775 K for 2 h, which is higher than that of usual commercial Si photodiodes. These results are important for the fabrication of Te-doped silicon and facilitate its application in infrared detectors.

  1. Some n-p (Hg,Cd)Te photodiodes for 8-14 micrometer heterodyne applications

    NASA Technical Reports Server (NTRS)

    Shanley, J. F.; Flanagan, C. T.

    1980-01-01

    The results describing the dc and CO2 laser heterodyne characteristics of a three element photodiode array and single element and four element photodiode arrays are presented. The measured data shows that the n(+)-p configuration is capable of achieving bandwidths of 475 to 725 MHz and noise equivalent powers of 3.2 x 10 to the minus 20th power W/Hz at 77 K and 1.0 x 10 to the minus 19th power W/Hz at 145 K. The n(+)-n(-)-p photodiodes exhibited wide bandwidths (approximately 2.0 GHz) and fairly good effective heterodyne quantum efficiencies (approximately 13-30 percent at 2.0 GHz). Noise equivalent powers ranging from 1.44 x 10 to the minus 19th power W/Hz to 6.23 x 10 to the minus 20th power W/Hz were measured at 2.0 GHz.

  2. Analysis of the photodiode boundary layer transition indicator. LDRD final report

    SciTech Connect

    Kuntz, D.W.; Wilken, A.C.; Payne, J.L.

    1994-06-01

    The photodiode transition indicator is a device which has been successfully used to determine the onset of boundary layer transition on numerous hypersonic flight vehicles. The exact source of the electromagnetic radiation detected by the photodiode at transition was not understood. In some cases early saturation of the device occurred, and the device failed to detect transition. Analyses have been performed to determine the source of the radiation producing the photodiode signal. The results of these analyses indicate that the most likely source of the radiation is blackbody emission from the heatshield material bordering the quartz window of the device. Good agreement between flight data and calculations based on this radiation source has been obtained. Analyses also indicate that the most probable source of the radiation causing early saturation is blackbody radiation from carbon particles which break away from the nosetip during the ablation process.

  3. Blue-enhanced thin-film photodiode for dual-screen x-ray imaging

    SciTech Connect

    Vygranenko, Y.; Vieira, M.; Sazonov, A.; Heiler, G.; Tredwell, T.; Nathan, A.

    2009-12-28

    This article reports on a-Si:H-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n- and p-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits a dark current density of 900 pA/cm{sup 2} and an external quantum efficiency up to 90% at a reverse bias of 5 V. In the case of illumination through the tailored p-layer, the quantum efficiency of 60% at a 400 nm wavelength is almost double that for the conventional a-Si:H n-i-p photodiode.

  4. Reducing the thermal stress in a heterogeneous material stack for large-area hybrid optical silicon-lithium niobate waveguide micro-chips

    NASA Astrophysics Data System (ADS)

    Weigel, P. O.; Mookherjea, S.

    2017-04-01

    The bonding of silicon-on-insulator (SOI) to lithium niobate-on-insulator (LNOI) is becoming important for a new category of linear and nonlinear micro-photonic optical devices. In studying the bonding of SOI to LNOI through benzocyclobutene (BCB), a popular interlayer bonding dielectric used in hybrid silicon photonic devices, we use thermal stress calculations to suggest that BCB thickness does not affect thermal stress in this type of structure, and instead, thermal stress can be mitigated satisfactorily by matching the handles of the SOI and LNOI. We bond LNOI with a silicon handle to a silicon chip, remove the handle on the LNOI side, and thermally cycle the bonded stack repeatedly from room temperature up to 300°C and back down without incurring thermal stress cracks, which do appear when using LNOI with a lithium niobate handle, regardless of the BCB thickness. We show that this process can be used to create many hybrid silicon-lithium niobate waveguiding structures on a single patterned SOI chip bonded to a large-area (16 mm × 4.2 mm) lithium niobate film.

  5. Improved x-ray detection and particle identification with avalanche photodiodes

    SciTech Connect

    Diepold, Marc Franke, Beatrice; Götzfried, Johannes; Hänsch, Theodor W.; Krauth, Julian J.; Mulhauser, Françoise; Nebel, Tobias; Pohl, Randolf; Fernandes, Luis M. P.; Amaro, Fernando D.; Gouvea, Andrea L.; Monteiro, Cristina M. B.; Santos, Joaquim M. F. dos; Machado, Jorge; Amaro, Pedro; Santos, José Paulo; and others

    2015-05-15

    Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work, we report on a fitting technique used to account for different detector responses resulting from photoabsorption in the various avalanche photodiode layers. The use of this technique results in an improvement of the energy resolution at 8.2 keV by up to a factor of 2 and corrects the timing information by up to 25 ns to account for space dependent electron drift time. In addition, this waveform analysis is used for particle identification, e.g., to distinguish between x-rays and MeV electrons in our experiment.

  6. A near infrared organic photodiode with gain at low bias voltage

    SciTech Connect

    Campbell, Ian H; Crone, Brian K

    2009-01-01

    We demonstrate an organic photodiode with near infrared optical response out to about 1100 run with a gain of {approx}10 at 1000 run under 5V reverse bias. The diodes employ a soluble naphthalocyanine with a peak absorption coefficient of {approx}10{sup 5} cm{sup -1} at 1000 nm. In contrast to most organic photodiodes, no exciton dissociating material is used. At zero bias, the diodes are inefficient with an external quantum efficiency of {approx} 10{sup -2}. In reverse bias, large gain occurs and is linear with bias voltage above 4V. The observed gain is consistent with a photoconductive gain mechanism.

  7. Development of Fuses for Protection of Geiger-Mode Avalanche Photodiode Arrays

    NASA Astrophysics Data System (ADS)

    Grzesik, Michael; Bailey, Robert; Mahan, Joe; Ampe, Jim

    2015-11-01

    Current-limiting fuses composed of Ti/Al/Ni were developed for use in Geiger-mode avalanche photodiode arrays for each individual pixel in the array. The fuses were designed to burn out at ˜4.5 × 10-3 A and maintain post-burnout leakage currents less than 10-7 A at 70 V sustained for several minutes. Experimental fuse data are presented and successful incorporation of the fuses into a 256 × 64 pixel InP-based Geiger-mode avalanche photodiode array is reported.

  8. Online management of lithium-ion battery based on time-triggered controller area network for fuel-cell hybrid vehicle applications

    NASA Astrophysics Data System (ADS)

    Li, Xiangjun; Li, Jianqiu; Xu, Liangfei; Ouyang, Minggao; Han, Xuebing; Lu, Languang; Lin, Chengtao

    This paper introduces a state of charge (SOC) estimation algorithm that was implemented for an automotive lithium-ion battery system used in fuel-cell hybrid vehicles (FCHVs). The proposed online control strategy for the lithium-ion battery, based on the Ah current integration method and time-triggered controller area network (TTCAN), incorporates a signal filter and adaptive modifying concepts to estimate the Li 2MnO 4 battery SOC in a timely manner. To verify the effectiveness of the proposed control algorithm, road test experimentation was conducted with an FCHV using the proposed SOC estimation algorithm. It was confirmed that the control technique can be used to effectively manage the lithium-ion battery and conveniently estimate the SOC.

  9. Hybrid and electric low-noise cars cause an increase in traffic accidents involving vulnerable road users in urban areas.

    PubMed

    Brand, Stephan; Petri, Maximilian; Haas, Philipp; Krettek, Christian; Haasper, Carl

    2013-01-01

    Due to resource scarcity, the number of low-noise and electric cars is expected to increase rapidly. The frequent use of these cars will lead to a significant reduction of traffic related noise and pollution. On the other hand, due to the adaption and conditioning of vulnerable road users the number of traffic accidents involving pedestrians and bicyclists is postulated to increase as well. Children, older people with reduced eyesight and the blind are especially reliant on a combination of acoustic and visual warning signals with approaching or accelerating vehicles. This is even more evident in urban areas where the engine sound is the dominating sound up to 30 kph (kilometres per hour). Above this, tyre-road interaction is the main cause of traffic noise. With the missing typical engine sound a new sound design is necessary to prevent traffic accidents in urban areas. Drivers should not be able to switch the sound generator off.

  10. Polymer planar lightwave circuit based hybrid-integrated coherent receiver for advanced modulation signals

    NASA Astrophysics Data System (ADS)

    Wang, Jin; Han, Yang; Liang, Zhongcheng; Chen, Yongjin

    2012-11-01

    Applying coherent detection technique to advanced modulation formats makes it possible to electronically compensate the signal impairments. A key issue for a successful deployment of coherent detection technique is the availability of cost-efficient and compact integrated receivers, which are composed of an optical 90° hybrid mixer and four photodiodes (PDs). In this work, three different types of optical hybrids are fabricated with polymer planar lightwave circuit (PLC), and hybridly integrated with four vertical backside illuminated III-V PDs. Their performances, such as the insertion loss, the transmission imbalance, the polarization dependence and the phase deviation of 90° hybrid will be discussed.

  11. Photon Detection with Cooled Avalanche Photodiodes: Theory and Preliminary Experimental Results

    NASA Technical Reports Server (NTRS)

    Robinson, D. L.; Hays, D. A.

    1985-01-01

    Avalanche photodiodes (APDs) can be operated in a geiger-tube mode so that they can respond to single electron events and thus be used as photon counting detectors. Operational characteristics and theory of APDs while used in this mode are analyzed and assessed. Preliminary experimental investigation of several commercially available APDs has commenced, and initial results for dark count statistics are presented.

  12. Nonlinear Time-Variant Response in an Avalanche Photodiode Array Based Laser Detection and Ranging System

    DTIC Science & Technology

    2007-03-01

    Model Details . . . . . . . . . . . . . 23 vi Page 3.5 ROIC Model Details . . . . . . . . . . . . . . . . . . . . 25 3.6 Model Implications...28 4.3 ROIC Systematic Error Suppression . . . . . . . . . . . 29 4.4 Time Variance . . . . . . . . . . . . . . . . . . . . . . . 32 4.5 Time...Field of View . . . . . . . . . . . . . . . . . 2 APD Avalanche Photodiode . . . . . . . . . . . . . . . . . . . . 3 ROIC Read-Out Integrated Circuit

  13. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

    PubMed Central

    Aull, Brian

    2016-01-01

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging. PMID:27070609

  14. Fabrication and performance of intrinsic germanium photodiodes. [for atmospheric IR spectroscopy

    NASA Technical Reports Server (NTRS)

    Beiting, E. J., III; Feldman, P. D.

    1977-01-01

    The paper presents fabrication details for an intrinsic germanium photodiode developed for study of atmospheric constituents, the airglow and auroras in the 1-2 micron spectral range. Attention is given to cutting of the single crystal, spreading of the lithium dispersion, sputtering of a gold coating, and surface passivation. A wavelength response curve is presented.

  15. The blocking probability of Geiger-mode avalanche photo-diodes

    NASA Technical Reports Server (NTRS)

    Moision, Bruce; Srinivasan, Meera; Hamkins, Jon

    2005-01-01

    When a photo is detected by a Geiger-mode avalanche photo-diode (GMAPD), the detector is rendered inactive, or blocked, for a certain period of time. In this paper we derive the blocking probability for a GMAPD whose input is either an unmodulated, Benoulli modulated or pulse-position-modulated Poisson process.

  16. Photoionization of Trapped Carriers in Avalanche Photodiodes to Reduce Afterpulsing During Geiger-Mode Photon Counting

    NASA Technical Reports Server (NTRS)

    Krainak, Michael A.

    2005-01-01

    We reduced the afterpulsing probability by a factor of five in a Geiger-mode photon-counting InGaAs avalanche photodiode by using sub-band-gap (lambda = 1.95 micron) laser diode illumination, which we believe photoionizes the trapped carriers.

  17. Temperature-Dependent Detectivity of Near-Infrared Organic Bulk Heterojunction Photodiodes.

    PubMed

    Wu, Zhenghui; Yao, Weichuan; London, Alexander E; Azoulay, Jason D; Ng, Tse Nga

    2017-01-18

    Bulk heterojunction photodiodes are fabricated using a new donor-acceptor polymer with a near-infrared absorption edge at 1.2 μm, achieving a detectivity up to 10(12) Jones at a wavelength of 1 μm and an excellent linear dynamic range of 86 dB. The photodiode detectivity is maximized by operating at zero bias to suppress dark current, while a thin 175 nm active layer is used to facilitate charge collection without reverse bias. Analysis of the temperature dependence of the dark current and spectral response demonstrates a 2.8-fold increase in detectivity as the temperature was lowered from 44 to -12 °C, a relatively small change when compared to that of inorganic-based devices. The near-infrared photodiode shows a switching speed reaching up to 120 μs without an external bias. An application using our NIR photodiode to detect arterial pulses of a fingertip is demonstrated.

  18. Experimental analysis of a novel and low-cost pin photodiode dosimetry system for diagnostic radiology

    NASA Astrophysics Data System (ADS)

    Nazififard, Mohammad; Suh, Kune Y.; Mahmoudieh, Afshin

    2016-07-01

    Silicon PIN photodiode has recently found broad and exciting applications in the ionizing radiation dosimetry. In this study a compact and novel dosimetry system using a commercially available PIN photodiode (BPW34) has been experimentally tested for diagnostic radiology. The system was evaluated with clinical beams routinely used for diagnostic radiology and calibrated using a secondary reference standard. Measured dose with PIN photodiode (Air Kerma) varied from 10 to 430 μGy for tube voltages from 40 to 100 kVp and tube current from 0.4 to 40 mAs. The minimum detectable organ dose was estimated to be 10 μGy with 20% uncertainty. Results showed a linear correlation between the PIN photodiode readout and dose measured with standard dosimeters spanning doses received. The present dosimetry system having advantages of suitable sensitivity with immediate readout of dose values, low cost, and portability could be used as an alternative to passive dosimetry system such as thermoluminescent dosimeter for dose measurements in diagnostic radiology.

  19. Use of a vacuum-planar photodiode to drive an electro-optic Q switch directly.

    PubMed

    Stankov, K A; Milev, I Y

    1991-12-20

    A vacuum photodiode was used to drive a Pockels cell directly in an optical-feedback arrangement. This technique was used to achieve Q switching and a single-longitudinal-mode operation in a flash-lamp-pumped Nd:YAG laser. Synchronization within 2 ns with an external short-pulse laser source was demonstrated.

  20. Photon counting performance measurements of transfer electron InGaAsP photocathode hybrid photomultiplier tubes at 1064 nm wavelength

    NASA Astrophysics Data System (ADS)

    Sun, Xiaoli; Krainak, Michael A.; Hasselbrack, William B.; La Rue, Ross A.

    2007-05-01

    We report the test results of a hybrid photomultiplier tube (HPMT) with a transfer electron (TE) InGaAsP photocathode and GaAs Schottky avalanche photodiode (APD) anode. Unlike Geiger mode InGaAsP APDs, these HPMTs (also known as intensified photodiode (IPD), vacuum APD, or hybrid photodetector) operate in linear mode without the need for quenching and gating. Their greatest advantages are wide dynamic range, high speed, large photosensitive area, and potential for photon counting and analog detection dual mode operation. The photon detection efficiency we measured was 25% at 1064 nm wavelength with a dark count rate of 60,000/s at -22 degrees Celsius. The output pulse width in response to a single photon detection is about 0.9 ns. The maximum count rate was 90 Mcts/s and was limited solely by the speed of the discriminator used in the measurement (10 ns dead time). The spectral response of these devices extended from 900 to 1300 nm. We also measured the HPMT response to 60 ps laser pulses. The average output pulse amplitude increased monotonically with the input pulse energy, which suggested that we can resolve photon number in an incident pulse. The jitter of the HPMT output was found to be about 0.5 ns standard deviation and depended on bias voltage applied to the TE photocathode. To our knowledge, these HPMTs are the most sensitive non gating photon detectors at 1064 nm wavelength, and they will have many applications in laser altimeters, atmospheric lidars, and free space laser communication systems.

  1. Studies of High Performance Indium Gallium Arsenide Metal-Semiconductor Photodiodes.

    NASA Astrophysics Data System (ADS)

    Gao, Wei

    1995-01-01

    The purpose of this study is to achieve high speed and high responsivity metal-semiconductor-metal (MSM) photodiodes, which includes material growth, device design, fabrication, and testing. Liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) growth were used to grow high purity InGaAs layers. To obtain high purity InGaAs layers, rare-earth elements (Yb, Ga, and Er) were used during LPE growth. The rare-earth elements react strongly with donor impurities to purify the epitaxial layers, resulting in higher mobility, lower carrier concentration, and higher photoluminescence efficiency in the rare-earth doped melt grown InGaAs layer. Unfortunately, rare-earth elements have high impurity levels and hardly interact with acceptor impurities; thus, causing undesired deep levels. Both abrupt and digital superlattice InAlAs barrier enhancement InGaAs MSM photodiodes were grown by MBE. To improve the photoresponsivity, a transparent conductive material, cadmium tin oxide (CTO) was used as the MSM contacts. The CTO functions as a Schottky contact, an optical window and an anti-reflection coating. The Schottky barrier height, which is vitally important for MSM photodiodes, was studied with CTO, ITO, Au, Ti, and Pt on InAlAs using the Norde method. The CTO MSM photodiodes showed a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes. Abrupt barrier enhancement MSM photodiodes using CTO and Ti/Au electrodes demonstrated 3-dB bandwidths of 0.3 and 0.8 GHz, respectively. However, digital grading of the heterojunction facilitated better carrier extraction resulting in increased bandwidths of 1.3 and 7.1 GHz, respectively, for CTO and Ti/Au. It was demonstrated that CTO possesses a low resistivity, high transparency, and good Schottky barrier height, which makes CTO a very attractive transparent conductor suitable for optoelectronic applications. Lastly, four novel structures were proposed to improve the responsivity and the bandwidth of

  2. A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures.

    PubMed

    Wofford, Joseph M; Nakhaie, Siamak; Krause, Thilo; Liu, Xianjie; Ramsteiner, Manfred; Hanke, Michael; Riechert, Henning; J Lopes, J Marcelo

    2017-02-27

    Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials.

  3. A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

    PubMed Central

    Wofford, Joseph M.; Nakhaie, Siamak; Krause, Thilo; Liu, Xianjie; Ramsteiner, Manfred; Hanke, Michael; Riechert, Henning; J. Lopes, J. Marcelo

    2017-01-01

    Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials. PMID:28240323

  4. Relationship between isoseismal area and magnitude of historical earthquakes in Greece by a hybrid fuzzy neural network method

    NASA Astrophysics Data System (ADS)

    Tselentis, G.-A.; Sokos, E.

    2012-01-01

    In this paper we suggest the use of diffusion-neural-networks, (neural networks with intrinsic fuzzy logic abilities) to assess the relationship between isoseismal area and earthquake magnitude for the region of Greece. It is of particular importance to study historical earthquakes for which we often have macroseismic information in the form of isoseisms but it is statistically incomplete to assess magnitudes from an isoseismal area or to train conventional artificial neural networks for magnitude estimation. Fuzzy relationships are developed and used to train a feed forward neural network with a back propagation algorithm to obtain the final relationships. Seismic intensity data from 24 earthquakes in Greece have been used. Special attention is being paid to the incompleteness and contradictory patterns in scanty historical earthquake records. The results show that the proposed processing model is very effective, better than applying classical artificial neural networks since the magnitude macroseismic intensity target function has a strong nonlinearity and in most cases the macroseismic datasets are very small.

  5. Hybrid photodetector for single-molecule spectroscopy and microscopy

    PubMed Central

    Michalet, X.; Cheng, Adrian; Antelman, Joshua; Suyama, Motohiro; Arisaka, Katsushi; Weiss, Shimon

    2011-01-01

    We report benchmark tests of a new single-photon counting detector based on a GaAsP photocathode and an electron-bombarded avalanche photodiode developed by Hamamatsu Photonics. We compare its performance with those of standard Geiger-mode avalanche photodiodes. We show its advantages for FCS due to the absence of after-pulsing and for fluorescence lifetime measurements due to its excellent time resolution. Its large sensitive area also greatly simplifies setup alignment. Its spectral sensitivity being similar to that of recently introduced CMOS SPADs, this new detector could become a valuable tool for single-molecule fluorescence measurements, as well as for many other applications. PMID:21822361

  6. Photodiode Camera Measurement of Surface Strains on Tendons during Multiple Cyclic Tests

    NASA Astrophysics Data System (ADS)

    Chun, Keyoung Jin; Hubbard, Robert Philip

    The objectives of this study are to introduce the use of a photodiode camera for measuring surface strain on soft tissue and to present some representative responses of the tendon. Tendon specimens were obtained from the hindlimbs of canines and frozen to -70°C. After thawing, specimens were mounted in the immersion bath at a room temperature (22°C), preloaded to 0.13N and then subjected to 3% of the initial length at a strain rate of 2%/sec. In tendons which were tested in two blocks of seven repeated extensions to 3% strain with a 120 seconds wait period between, the surface strains were measured with a photodiode camera and near the gripped ends generally were greater than the surface strains in the middle segment of the tendon specimens. The recovery for peak load after the rest period was consistent but the changes in patterns of surface strains after the rest period were not consistent. The advantages of a photodiode measurement of surface strains include the followings: 1) it is a noncontacting method which eliminates errors and distortions caused by clip gauges or mechanical/electronic transducers; 2) it is more accurate than previous noncontact methods, e.g. the VDA and the high speed photographic method; 3) it is a fully automatic, thus reducing labor for replaying video tapes or films and potential errors from human judgement which can occur during digitizing data from photographs. Because the photodiode camera, employs a solid state photodiode array to sense black and white images, scan targets (black image) on the surface of the tendon specimen and back lighting system (white image), and stored automatically image data for surface strains of the tendon specimen on the computer during cyclic extensions.

  7. Studies of Avalanche Photodiodes (APDS) as Readout Devices for Scintillating Fibers for High Energy Gamma-Ray Astronomy Telescopes

    NASA Technical Reports Server (NTRS)

    Vasile, Stefan; Shera, Suzanne; Shamo, Denis

    1998-01-01

    New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive

  8. Increasing the response of PIN photodiodes to the ultraviolet

    NASA Technical Reports Server (NTRS)

    Burrous, C. N.; Whiting, E. E.

    1972-01-01

    Solid state device uses sapphire windows and avoids coatings which absorb ultraviolet radiation and ultimately alter detector geometry. Ultimate solution for ultraviolet response is geometry with maximum peripheral area and horizontal field structure to draw out photon induced current carriers.

  9. Nano- and micro-structured silicon for hybrid near-infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Äńerek, V.; Głowacki, E. D.; Bednorz, M.; Demchyshyn, S.; Sariciftci, N. S.; Ivanda, M.

    2016-05-01

    Structuring surface and bulk of crystalline silicon on different length scales can significantly alter its properties and possibly improve the performance of opto-electronic devices and sensors based on silicon. Different dominant feature scales are responsible for modification of some of electronic and optical properties of silicon. Several easily reproducible chemical methods for facile structuring of silicon on nano and micro-scales, based on both electroless and anodic etching of silicon in hydrofluoric acid based etchants, and chemical anisotropic etching of silicon in basic environments, are presented. We show how successive micro and nano structuring creates hierarchical silicon surfaces, which can be used to simultaneously exploit the advantages of both structuring feature length scales. Finally, we demonstrate a large increase in photocurrent obtained from a hybrid structured silicon/organic near-infrared photodetector. Improved silicon/6,6'-dibromoindigo hybrid photodiodes were prepared by nano- and micro-structuring the silicon part of the heterojunction by wet chemical etching methods. Photocurrent and spectral responsivity were improved in comparison to planar diodes by up to two orders of magnitude by optimization of the silicon structuring process. We show that the improvement in photocurrent is not due to the increase in surface area or light trapping.

  10. Dynamics of local micro-breakdown in the Geiger mode of avalanche photodiodes

    SciTech Connect

    Verhovtseva, A. V. Gergel, V. A.

    2009-07-15

    Mathematical modeling methods were used to study the dynamics of micro-breakdown development in structures of silicon avalanche photodiodes. The constructed model considers the locality of the avalanchexs multiplication region appearing during single photon absorption and the delay of the avalanchexs current spreading over the rear electrode of the diode. The calculations showed two different phases of transient process of the formation of the electrical signal, i.e., the rapid and slow ones due to current spreading and ordinary RC recharge, respectively. The load resistances required to implement the pulsed mode of operation of the structures of the avalanche photodiode were calculated for a series of actual diode capacitances and spreading resistances of the rear electrode.

  11. A low-noise large dynamic-range readout suitable for laser spectroscopy with photodiodes

    NASA Astrophysics Data System (ADS)

    Pullia, A.; Sanvito, T.; Potenza, M. A.; Zocca, F.

    2012-10-01

    An original low-noise large dynamic-range readout system for optical light spectroscopy with PIN diodes is presented. The front-end circuit is equipped with a smart device for automatic cancellation of the large dc offset brought about by the photodiode current. This device sinks away the exact amount of dc current from the preamplifier input, yielding auto zeroing of the output-voltage offset, while introducing the minimum electronic noise possible. As a result the measurement dynamic-range is maximized. Moreover, an auxiliary inspection point is provided which precisely tracks the dc component of the photodiode current. This output allows for precise beam alignment and may also be used for diagnostic purposes. The excellent gain stability and linearity make the circuit perfectly suited for optical-light pulse spectroscopy. Applications include particle sizing in the 100 nm range, two-dimensional characterization of semiconductor detectors, ultra-precise characterization of laser beam stability, confocal microscopy.

  12. A photon-counting photodiode array detector for far ultraviolet (FUV) astronomy

    NASA Technical Reports Server (NTRS)

    Hartig, G. F.; Moos, H. W.; Pembroke, R.; Bowers, C.

    1982-01-01

    A compact, stable, single-stage intensified photodiode array detector designed for photon-counting, far ultraviolet astronomy applications employs a saturable, 'C'-type MCP (Galileo S. MCP 25-25) to produce high gain pulses with a narrowly peaked pulse height distribution. The P-20 output phosphor exhibits a very short decay time, due to the high current density of the electron pulses. This intensifier is being coupled to a self-scanning linear photodiode array which has a fiber optic input window which allows direct, rigid mechanical coupling with minimal light loss. The array was scanned at a 250 KHz pixel rate. The detector exhibits more than adequate signal-to-noise ratio for pulse counting and event location.

  13. A low cost X-ray imaging device based on BPW-34 Si-PIN photodiode

    NASA Astrophysics Data System (ADS)

    Emirhan, E.; Bayrak, A.; Yücel, E. Barlas; Yücel, M.; Ozben, C. S.

    2016-05-01

    A low cost X-ray imaging device based on BPW-34 silicon PIN photodiode was designed and produced. X-rays were produced from a CEI OX/70-P dental tube using a custom made ±30 kV power supply. A charge sensitive preamplifier and a shaping amplifier were built for the amplification of small signals produced by photons in the depletion layer of Si-PIN photodiode. A two dimensional position control unit was used for moving the detector in small steps to measure the intensity of X-rays absorbed in the object to be imaged. An Aessent AES220B FPGA module was used for transferring the image data to a computer via USB. Images of various samples were obtained with acceptable image quality despite of the low cost of the device.

  14. Application of a silicon photodiode array for solar edge tracking in the Halogen Occultation Experiment

    NASA Technical Reports Server (NTRS)

    Mauldin, L. E., III; Moore, A. S.; Stump, C. S.; Mayo, L. S.

    1985-01-01

    The optical and electronic design of the Halogen Occultation Experiment (HALOE) elevation sunsensor is described. This system uses a Galilean telescope to form a solar image on a linear silicon photodiode array. The array is a self-scanned, monolithic charge coupled device. The addresses of both solar edges imaged on the array are used by the control/pointing system to scan the HALOE science instantaneous-field-of-view (IFOV) across the vertical solar diameter during instrument calibration, and then maintain the science IFOV four arcmin below the top edge during the science data occultation event. Vertical resolution of 16 arcsec and a radiometric dynamic range of 100 are achieved at the 0.7 micrometer operating wavelength. The design provides for loss of individual photodiode elements without loss of angular tracking capability. The HALOE instrument is a gas correlation radiometer that is now being developed by NASA Langley Research Center for the Upper Atmospheric Research Satellite.

  15. An InN/InGaN/GaN nanowire array guided wave photodiode on silicon

    NASA Astrophysics Data System (ADS)

    Hazari, Arnab; Zunaid Baten, Md.; Yan, Lifan; Millunchick, Joanna M.; Bhattacharya, Pallab

    2016-11-01

    The III-nitride nanowire heterostructure arrays with multiple InN disk light absorbing regions have been grown by plasma-assisted molecular beam epitaxy on (001)Si substrates, and guided wave photodiodes have been fabricated and characterized. The spectral photocurrent of the devices has been measured under reverse bias, and the data exhibit distinct shoulders in the range of 0.69-3.2 eV (0.39-1.8 μm). The estimated responsivity at a wavelength of 1.3 μm is 0.2 A/W. The nanowire photodiode response was also measured with an excitation at one facet provided by an edge-emitting laser fabricated with the same nanowire array and emitting at 1.3 μm.

  16. Cooled photodiodes based on a type-II single p-InAsSbP/ n-InAs heterostructure

    NASA Astrophysics Data System (ADS)

    Il'inskaya, N. D.; Karandashev, S. A.; Latnikova, N. M.; Lavrov, A. A.; Matveev, B. A.; Petrov, A. S.; Remennyi, M. A.; Sevost'yanov, E. N.; Stus', N. M.

    2013-09-01

    Analysis of current-voltage and spectral characteristics of photodiodes based on a single p-InAsSbP/ n-InAs heterostructure formed on a heavily doped n +-InAs substrate ( n + ˜ 1018 cm-3) is presented. It is shown that, at low temperatures (77 < T < 190 K), the generation-recombination current flow mechanism typical of p-i-n diodes dominates. Expected parameters of the photodiode that can be obtained using these heterostructures are presented.

  17. Optimisation on the two-layer stack gamma detectors of CsI(Tl) coupled with a pin photodiode for non-destructive testing.

    PubMed

    Bai, Jin Hyoung; Whang, Joo Ho

    2011-07-01

    This paper proposed the two-layer stack scintillator-coupled photodiode detector to improve the measurement accuracy of the gamma-ray scanning. Both MCNPX and DETECT97 code were used to design the detector. The two manufactured two-layer stack gamma detectors were used to measure the density profile of the distillation column of the radiographic non-intrusive process diagnostic area. To compare the measurement accuracy of the density profile through the non-destructive transmission test, the relative error of the four fluids used for the process diagnostics was analysed. To summarise the measurement results with regard to the relative error of the NaI(Tl) detector and the manufactured detector by material as well as the total relative error, the total relative error of the NaI(Tl) detector was about 15.7 %, whereas that of the two-layer stack CsI(Tl) with photodiode detectors were about 5 %. This paper confirmed that the measurement accuracy of the detector proposed was improved by about three times as compared with the NaI(Tl) detector mostly used for non-destructive testing.

  18. Vacuum photodiode detector array for broadband UV detection in a tokamak plasma.

    PubMed

    Zweben, S J; Menyuk, C R; Taylor, R J

    1979-08-01

    An array of vacuum photodiode detectors has been used to monitor discharge equilibrium, stability, and cleanliness in the Macrotor tokamak. These detectors use the photoelectric effect on small tungsten plates to measure UV emission in the band lambda approximately 200-1200 angstroms, and so are sensitive mainly to impurity line radiation in Macrotor. The response of this system to controlled impurity contamination experiments and to disruptions is described. The design, construction, and background problems associated with these detectors are discussed in detail.

  19. Effect of nitride chemical passivation of the surface of GaAs photodiodes on their characteristics

    NASA Astrophysics Data System (ADS)

    Kontrosh, E. V.; Lebedeva, N. M.; Kalinovskiy, V. S.; Soldatenkov, F. Yu; Ulin, V. P.

    2016-11-01

    Characteristics of GaAs photodiodes have been studied before and after the chemical nitridation of their surface in hydrazine sulfide solutions, which leads to substitution of surface As atoms with N atoms to give a GaN monolayer. The resulting nitride coatings hinder the oxidation of GaAs in air and provide a decrease in the density of surface states involved in recombination processes. The device characteristics improved by nitridation are preserved during a long time.

  20. High sensitivity InAs photodiodes for mid-infrared detection

    NASA Astrophysics Data System (ADS)

    Ng, Jo Shien; Zhou, Xinxin; Auckloo, Akeel; White, Benjamin; Zhang, Shiyong; Krysa, Andrey; David, John P. R.; Tan, Chee Hing

    2016-10-01

    Sensitive detection of mid-infrared light (2 to 5 μm wavelengths) is crucial to a wide range of applications. Many of the applications require high-sensitivity photodiodes, or even avalanche photodiodes (APDs), with the latter generally accepted as more desirable to provide higher sensitivity when the optical signal is very weak. Using the semiconductor InAs, whose bandgap is 0.35 eV at room temperature (corresponding to a cut-off wavelength of 3.5 μm), Sheffield has developed high-sensitivity APDs for mid-infrared detection for one such application, satellite-based greenhouse gases monitoring at 2.0 μm wavelength. With responsivity of 1.36 A/W at unity gain at 2.0 μm wavelength (84 % quantum efficiency), increasing to 13.6 A/W (avalanche gain of 10) at -10V, our InAs APDs meet most of the key requirements from the greenhouse gas monitoring application, when cooled to 180 K. In the past few years, efforts were also made to develop planar InAs APDs, which are expected to offer greater robustness and manufacturability than mesa APDs previously employed. Planar InAs photodiodes are reported with reasonable responsivity (0.45 A/W for 1550 nm wavelength) and planar InAs APDs exhibited avalanche gain as high as 330 at 200 K. These developments indicate that InAs photodiodes and APDs are maturing, gradually realising their potential indicated by early demonstrations which were first reported nearly a decade ago.

  1. Recent progress in high gain InAs avalanche photodiodes (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Bank, Seth; Maddox, Scott J.; Sun, Wenlu; Nair, Hari P.; Campbell, Joe C.

    2015-08-01

    InAs possesses nearly ideal material properties for the fabrication of near- and mid-infrared avalanche photodiodes (APDs), which result in strong electron-initiated impact ionization and negligible hole-initiated impact ionization [1]. Consequently, InAs multiplication regions exhibit several appealing characteristics, including extremely low excess noise factors and bandwidth independent of gain [2], [3]. These properties make InAs APDs attractive for a number of near- and mid-infrared sensing applications including remote gas sensing, light detection and ranging (LIDAR), and both active and passive imaging. Here, we discuss our recent advances in the growth and fabrication of high gain, low noise InAs APDs. Devices yielded room temperature multiplication gains >300, with much reduced (~10x) lower dark current densities. We will also discuss a likely key contributor to our current performance limitations: silicon diffusion into the intrinsic (multiplication) region from the underlying n-type layer during growth. Future work will focus on increasing the intrinsic region thickness, targeting gains >1000. This work was supported by the Army Research Office (W911NF-10-1-0391). [1] A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, "Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes," Applied Physics Letters, vol. 93, p. 111107, 2008. [2] A. R. J. Marshall, A. Krysa, S. Zhang, A. S. Idris, S. Xie, J. P. R. David, and C. H. Tan, "High gain InAs avalanche photodiodes," in 6th EMRS DTC Technical Conference, Edinburgh, Scotland, UK, 2009. [3] S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping," Applied Physics Letters, vol. 101, no. 15, pp. 151124-151124-3, Oct. 2012.

  2. Feasibility study of an avalanche photodiode readout for a high resolution PET with nsec time resolution

    SciTech Connect

    Schmelz, C.; Ziegler, S.; Bradbury, S.M.; Holl, I.; Lorenz, E.; Renker, D.

    1995-08-01

    A feasibility study for a high resolution positron emission tomograph, based on 9.5 x 4 x 4 mm{sup 3} LSO crystals viewed by 3 mm diameter avalanche photodiodes, has been carried out. Using a Na{sup 22} source the authors determined a spatial resolution of 2.3 {+-} 0.1 mm, an energy resolution around 15 % and a time resolution of 2.6 nsec. Possible configurations for larger scale tests and a tomograph are given.

  3. Interdigitated microelectrode array-coupled bipolar semiconductor photodiode array (IMEA-PDA) microchip for on-chip electrochemiluminescence detection.

    PubMed

    Pal, Sukdeb; Kim, Min Jung; Tak, Yu Kyung; Kwon, Ho Taik; Song, Joon Myong

    2009-10-01

    This paper reports the design, fabrication and testing of a microchip wherein interdigitated microelectrode arrays (IMEA) were integrated with bipolar semiconductor photodiode array (PDA) chip to fabricate a highly compact embodiment for on-chip handling of solutions and electrochemiluminescence (ECL) detection. A 12 x 12 micro array of photodiodes, each coupled with an interdigitated microelectrode array (IMEA), an array of current amplifiers, and a photodiode element-addressing circuit were integrated into a single 2 x 2 cm² IC chip. Each photodiode had dimensions of 300 x 300 μm² and the photodiode-to-photodiode distance was 100 μm. The chip was successfully applied to the on-chip quantification of electro-chemiluminescing probe-labeled single stranded oligonucleotides. The minimum detectable limit at signal/noise ≥ 3 was found to be 5 x 10⁻¹⁴ moles of oligonucleotides with a sample volume as low as 5 microl (i.e., 10 fmole/μl). The attractive features of the developed IMEA-PDA microchip are that a plurality of samples can be analyzed simultaneously using a chip and that for a given sample the data can be averaged from values obtained from multiple, individually addressed pixels. These in turn bring in speed and statistical confidence in analysis. The IMEA-PDA microchip system has the potential to be used as a versatile and highly compact chemical analysis tool for chemical sensing and metrology applications.

  4. The research of multi-alkali vacuum photodiode on heating and illuminating

    NASA Astrophysics Data System (ADS)

    Fu, Rongguo; Yang, Liu; Wang, Guiyuan; Wei, Yifang; Wang, Kun

    2016-10-01

    A novel concept for solar cell technology, photon-enhanced thermionic emission (PETE), was proposed for harvesting photonic and thermionic energy simultaneously. Researches show that the conversion efficiency of PETE is pretty high, calculated efficiencies for idealized devices can be above 50%, which is exceed the theoretical limits of single-junction photovoltaic cells. To explore whether the vacuum device can exhibit good performance under the conditions that combines illumination and heating, a multi-alkali vacuum photodiode is used as a quantum and thermal energy converter. The band gap of multi-alkali cathode is 1.1eV and the multi-alkali photocathode is employed at temperature below 350K.The current-voltage characteristic curve is measured under two different temperature conditions, so is the power-voltage curve. And the conversion efficiency of the multi-alkali vacuum photodiode is also calculated on the basis of experiment data. The experiment results show that the power converted by a heated and illuminated condition is greater than that obtained under illumination at room temperature or heating without illumination. The conversion efficiency of the multi-alkali vacuum photodiode is higher than that not be heated. This paper shows that the multi-alkali vacuum device presents better performance under the combined conditions. Although the power production and conversion efficiency are not very high in this research, the experiment demonstrates how the two forms of quantum and thermal of solar energy can be simultaneously utilized.

  5. Monte Carlo simulations of compact gamma cameras based on avalanche photodiodes.

    PubMed

    Després, Philippe; Funk, Tobias; Shah, Kanai S; Hasegawa, Bruce H

    2007-06-07

    Avalanche photodiodes (APDs), and in particular position-sensitive avalanche photodiodes (PSAPDs), are an attractive alternative to photomultiplier tubes (PMTs) for reading out scintillators for PET and SPECT. These solid-state devices offer high gain and quantum efficiency, and can potentially lead to more compact and robust imaging systems with improved spatial and energy resolution. In order to evaluate this performance improvement, we have conducted Monte Carlo simulations of gamma cameras based on avalanche photodiodes. Specifically, we investigated the relative merit of discrete and PSAPDs in a simple continuous crystal gamma camera. The simulated camera was composed of either a 4 x 4 array of four channels 8 x 8 mm2 PSAPDs or an 8 x 8 array of 4 x 4 mm2 discrete APDs. These configurations, requiring 64 channels readout each, were used to read the scintillation light from a 6 mm thick continuous CsI:Tl crystal covering the entire 3.6 x 3.6 cm2 photodiode array. The simulations, conducted with GEANT4, accounted for the optical properties of the materials, the noise characteristics of the photodiodes and the nonlinear charge division in PSAPDs. The performance of the simulated camera was evaluated in terms of spatial resolution, energy resolution and spatial uniformity at 99mTc (140 keV) and 125I ( approximately 30 keV) energies. Intrinsic spatial resolutions of 1.0 and 0.9 mm were obtained for the APD- and PSAPD-based cameras respectively for 99mTc, and corresponding values of 1.2 and 1.3 mm FWHM for 125I. The simulations yielded maximal energy resolutions of 7% and 23% for 99mTc and 125I, respectively. PSAPDs also provided better spatial uniformity than APDs in the simple system studied. These results suggest that APDs constitute an attractive technology especially suitable to build compact, small field of view gamma cameras dedicated, for example, to small animal or organ imaging.

  6. Modal Bin Hybrid Model: A Surface Area Consistent, Triple Moment Sectional Method for Use in Process-oriented Modeling of Atmospheric Aerosols

    SciTech Connect

    Kajino, Mizuo; Easter, Richard C.; Ghan, Steven J.

    2013-09-10

    A triple moment sectional method, Modal Bin Hybrid Model (MBHM), has been developed. In addition to number and mass (volume), surface area is predicted (and preserved), which is important for gas-to-particle mass transfer and light extinction cross section. The performance of MBHM was evaluated against double moment sectional (DMS) methods with various size resolutions up to BIN256 (BINx: x is number of sections over three orders of magnitude in size, ΔlogD = 3/x) for simulating evolution of particles under simultaneously occurring nucleation, condensation and coagulation processes. Because MBHM gives a physically consistent form of the intra-sectional distributions, errors and biases of MBHM at BIN4-8 resolution were almost equivalent to those of DMS at BIN16-32 resolution for various important variables such as the moments Mk (k: 0, 2, 3), dMk/dt, and the number and volume of particles larger than a certain diameter. Another important feature of MBHM is that only a single bin is adequate to simulate full aerosol dynamics for particles whose size distribution can be approximated by a single lognormal mode. This flexibility is useful for process-oriented (multi category and/or mixing state) modeling: primary aerosols whose size parameters would not differ substantially in time and space can be expressed by a single or a small number of modes, whereas secondary aerosols whose size changes drastically from one to several hundred nanometers can be expressed by a number of modes. Added dimensions can be applied to MBHM to represent mixing state or photo-chemical age for aerosol mixing state studies.

  7. Waveguide-integrated vertical pin photodiodes of Ge fabricated on p+ and n+ Si-on-insulator layers

    NASA Astrophysics Data System (ADS)

    Ito, Kazuki; Hiraki, Tatsurou; Tsuchizawa, Tai; Ishikawa, Yasuhiko

    2017-04-01

    Vertical pin structures of Ge photodiodes (PDs) integrated with Si optical waveguides are fabricated by depositing Ge epitaxial layers on Si-on-insulator (SOI) layers, and the performances of n+-Ge/i-Ge/p+-SOI PDs are compared with those of p+-Ge/i-Ge/n+-SOI PDs. Both types of PDs show responsivities as high as 1.0 A/W at 1.55 µm, while the dark leakage current is different, which is consistent with previous reports on free-space PDs formed on bulk Si wafers. The dark current of the p+-Ge/i-Ge/n+-SOI PDs is higher by more than one order of magnitude. Taking into account the activation energies for dark current as well as the dependence on PD area, the dark current of the n+-Ge/i-Ge/p+-SOI PDs is dominated by the thermal generation of carriers via mid-gap defect levels in Ge, while for the p+-Ge/i-Ge/n+-SOI PDs, the dark current is ascribed to not only thermal generation but also other mechanisms such as locally formed conduction paths.

  8. Comparative study of various pixel photodiodes for digital radiography: Junction structure, corner shape and noble window opening

    NASA Astrophysics Data System (ADS)

    Kang, Dong-Uk; Cho, Minsik; Lee, Dae Hee; Yoo, Hyunjun; Kim, Myung Soo; Bae, Jun Hyung; Kim, Hyoungtaek; Kim, Jongyul; Kim, Hyunduk; Cho, Gyuseong

    2012-05-01

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 µm × 50 µm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  9. Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip.

    PubMed

    Gassenq, Alban; Hattasan, Nannicha; Cerutti, Laurent; Rodriguez, Jean Batiste; Tournié, Eric; Roelkens, Gunther

    2012-05-21

    In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3 µm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2 µm.

  10. Synthesis of water-dispersible poly-l-lysine-functionalized magnetic Fe3O4-(GO-MWCNTs) nanocomposite hybrid with a large surface area for high-efficiency removal of tartrazine and Pb(II).

    PubMed

    Hu, Dan; Wan, Xiaodong; Li, Xiaohui; Liu, Jianguo; Zhou, Chunhua

    2017-03-07

    In this study, a novel, effective and environment-friendly methods was used to prepare poly-l-lysine (PLL)-functionalized magnetic Fe3O4-(GO-MWCNTs) hybrid composite with large surface area and abundant hydroxyl and amino groups. The as-prepared PLL-Fe3O4-(GO-MWCNTs) nanocomposite was systematically characterized by FT-IR, XRD, TGA, SEM, TEM, VSM and EDX. The PLL-Fe3O4-(GO-MWCNTs) hybrid composite exhibited excellent adsorption performance for the removal of a dye (tartrazine) and a heave metal (Pb(II)). The result showed that adsorption of Pb(II) reached equilibrium in 30min and adsorption of tartrazine reached equilibrium in approximately 60min. Most importantly, PLL-Fe3O4-(GO-MWCNTs) hybrid possesses high adsorption capacity, rapid separation, and less time-consuming. The equilibrium adsorption capacity was 1038.42mgg(-1) for Pb(II) and 775.19mgg(-1) for tartrazine under the optimal conditions. These two pollutants removal were found to obey Langmuir adsorption model, while the kinetics of adsorption followed pseudo-second-order kinetic model. A possible adsorption mechanism has been proposed where the chelation between PLL and Pb(II) or electrostatic interaction between GO and tartrazine. These results demonstrated the potential applications of PLL-Fe3O4-(GO-MWCNTs) hybrid composite in deep-purification of polluted water.

  11. Single and few photon avalanche photodiode detection process study

    NASA Astrophysics Data System (ADS)

    Blazej, Josef; Prochazka, Ivan

    2009-07-01

    We are presenting the results of the study of the Single Photon Avalanche Diode (SPAD) pulse response risetime and its dependence on several key parameters. We were investigating the unique properties of K14 type SPAD with its high delay uniformity of 200 μm active area and the correlation between the avalanche buildup time and the photon number involved in the avalanche trigger. The detection chip was operated in a passive quenching circuit with active gating. This setup enabled us to monitor the diode reverse current using an electrometer, a fast digitizing oscilloscope, and using a custom design comparator circuit. The electrometer reading enabled to estimate the photon number per detection event, independently on avalanche process. The avalanche build up was recorded on the oscilloscope and processed by custom designed waveform analysis package. The correlation of avalanche build up to the photon number, bias above break, photon absorption location, optical pulse length and photon energy was investigated in detail. The experimental results are presented. The existing solid state photon counting detectors have been dedicated for picosecond resolution and timing stability of single photon events. However, the high timing stability is maintained for individual single photons detection, only. If more than one photon is absorbed within the detector time resolution, the detection delay will be significantly affected. This fact is restricting the application of the solid state photon counters to cases where single photons may be guaranteed, only. For laser ranging purposes it is highly desirable to have a detector, which detects both single photon and multi photon signals with picoseconds stability. The SPAD based photon counter works in a purely digital mode: a uniform output signal is generated once the photon is detected. If the input signal consists of several photons, the first absorbed one triggers the avalanche. Obviously, for multiple photon signals, the

  12. Extremely Efficient Multiple Electron-hole Pair Generation in Carbon Nanotube Photodiodes

    NASA Astrophysics Data System (ADS)

    Gabor, Nathaniel

    2010-03-01

    The efficient generation of multiple electron-hole (e-h) pairs from a single photon could improve the efficiency of photovoltaic solar cells beyond standard thermodynamic limits [1] and has been the focus of much recent work in semiconductor nanomaterials [2,3]. In single walled carbon nanotubes (SWNTs), the small Fermi velocity and low dielectric constant suggests that electron-electron interactions are very strong and that high-energy carriers should efficiently generate e-h pairs. Here, I will discuss observations of highly efficient generation of e-h pairs due to impact excitation in SWNT p-n junction photodiodes [4]. To investigate optoelectronic transport properties of individual SWNT photodiodes, we focus a laser beam over the device while monitoring the electronic characteristics. Optical excitation into the second electronic subband E22 ˜ 2 EGAP leads to striking photocurrent steps in the device I-VSD characteristics that occur at voltage intervals of the band gap energy EGAP/ e. Spatially and spectrally resolved photocurrent combined with temperature-dependent studies suggest that these steps result from efficient generation of multiple e-h pairs from a single hot E22 carrier. We conclude that in the SWNT photodiode, a single photon with energy greater than 2EGAP is converted into multiple e-h pairs, leading to enhanced photocurrent and increased photo-conversion efficiency. [1] W. Shockley, and H. J. Queisser, Journal of Applied Physics 32, 510 (1961). [2] R. D. Schaller, and V. I. Klimov, Physical Review Letters 92 (18), 186601 (2004). [3] R. J. Ellingson, et al, Nano Letters, 5 (5), 865-871 (2005). [4] Nathaniel M. Gabor, Zhaohui Zhong, Ken Bosnick, Jiwoong Park, and Paul McEuen, Science, 325, 1367 (2009).

  13. Evaluation of principal components analysis with high-performance liquid chromatography and photodiode array detection for the forensic differentiation of ballpoint pen inks.

    PubMed

    Kher, A A; Green, E V; Mulholland, M I

    2001-07-01

    Inks from seven black and eight blue ballpoint pens were separated by a high-performance liquid chromatography (HPLC) method utilizing a photodiode array detection (PDA). A classifier flowchart was designed for the chromatographic data based on the presence or absence of certain peaks at different wavelengths to qualitatively discriminate between the inks. The same data were quantitatively classified by principal components analysis (PCA) to estimate the separation between a pair of classes of ink samples. It was found that the black ballpoint pen inks were discriminated satisfactorily utilizing two-dimensional data of the peak areas and retention times at the optimum wavelengths. The blue pens were discriminated by analyzing the chromatographic data at four different wavelengths simultaneously with a cross-validated PCA. The results of this study indicated that HPLC-PDA coupled with chemometrics could make a powerful discriminating tool for the forensic chemist, especially when analyzing extensive and/or complex data.

  14. Conceptual design and applications of HgCdTe infrared photodiodes for heterodyne systems

    NASA Technical Reports Server (NTRS)

    Sirieix, M. B.; Hofheimer, H.

    1980-01-01

    The significance of HgCdTe photodiodes are discussed relative to their existance in heterodyne detection systems operating in the 9 to 11 micrometer CO2 laser wavelength region. Their successful fabrication as well as the physical properties of the materials are described. The implementation of controlled industrial processes are reported with emphasis on the yield of predictable and repeatable detector characteristics to the discriminating systems, demands for high cutoff frequencies, quantum efficiency, and reliability. The most salient production steps and diode characteristics are presented. Measured results from production units are also given.

  15. Time-gating scheme based on a photodiode for single-photon counting

    PubMed Central

    Kumavor, Patrick D.; Tavakoli, Behnoosh; Donkor, Eric; Zhu, Quing

    2012-01-01

    A fast, simple, and low-cost optical time-gating scheme for counting single photons is presented. Its construction consists of a silicon photodiode connected in series with a 50 Ω resistor and that operates in the photoconductive mode. The temporal resolution at the FWHM of the photon counting system was measured to be 62 ps. The profile of a single-photon pulse measured with the counting system agreed well with analytical results. The system was also used to successfully resolve a pair of targets with 4 mm separation inside a highly scattering medium by the use of time-gated early-arriving photons. PMID:21725458

  16. Self-scanned photodiode array - High performance operation in high dispersion astronomical spectrophotometry

    NASA Technical Reports Server (NTRS)

    Vogt, S. S.; Tull, R. G.; Kelton, P.

    1978-01-01

    A multichannel spectrophotometric detector system has been developed using a 1024 element self-scanned silicon photodiode array, which is now in routine operation with the high-dispersion coude spectrograph of the University of Texas McDonald Observatory 2.7-m telescope. Operational considerations in the use of such arrays for high precision and low light level spectrophotometry are discussed. A detailed description of the system is presented. Performance of the detector as measured in the laboratory and on astronomical program objects is described, and it is shown that these arrays are highly effective detectors for high dispersion astronomical spectroscopy.

  17. Magnetostriction measuring device based on an optical fiber sensor with an annular photodiode.

    PubMed

    de Manuel, V; Del Real, R P; Alonso, J; Guerrero, H

    2007-09-01

    A new simple and sensitive dilatometer to measure magnetostriction of ribbons has been developed, based on an optical fiber sensor using an annular photodiode. The optical fiber is used bidirectionally, both for emission and detection of light, simplifying the access to the ribbon under test. The working principle is based on the measurement by reflection of the longitudinal displacement of the ribbon end. For a Vitroperm amorphous ribbon of 100 mm length, 21 microm thickness, and 8.3 mm width, a displacement of 2.571 microm with a maximum uncertainty of 8 nm has been obtained.

  18. State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Ga(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.

  19. Effective amplifier noise for an optical receiver based on linear mode avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Chen, C.-C.

    1989-01-01

    The rms noise charge induced by the amplifier for an optical receiver based on the linear-mode avalanche photodiode (APD) was analyzed. It is shown that for an amplifier with a 1-pF capacitor and a noise temperature of 100 K, the rms noise charge due to the amplifier is about 300. Since the noise charge must be small compared to the signal gain, APD gains on the order of 1000 will be required to operate the receiver in the linear mode.

  20. Design and testing of an active quenching circuit for an avalanche photodiode photon detector

    NASA Technical Reports Server (NTRS)

    Arbel, D.; Schwartz, J. A.

    1991-01-01

    The photon-detection capabilities of avalanche photodiodes (APDs) operating above their theoretical breakdown voltages are described, with particular attention given to the needs and methods of quenching an avalanche once breakdown has occurred. A brief background on the motives of and previous work with this mode of operation is presented. Finally, a description of the design and testing of an active quenching circuit is given. Although the active quenching circuit did not perform as expected, knowledge was gained as to the signal amplitudes necessary for quenching and the need for a better model for the above-breakdown circuit characteristics of the Geiger-mode APD.

  1. Required energy for a laser radar system incorporating a fiber amplifier or an avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Overbeck, Jay A.; Salisbury, Michael S.; Mark, Martin B.; Watson, Edward A.

    1995-11-01

    The transmitted energy required for an airborne laser radar system to be able to image a target at 20 km is investigated. Because direct detection is being considered, two methods of using an avalanche photodiode (APD) as the detector and (2) using a commercial fiber amplifier as a preamplifier before a photodetector. For this analysis a specified signal-to-noise ratio was used in conjunction with the radar range equation, which includes the effects of atmospheric transmission and turbulence. Theoretical analysis reveals that a system with a fiber amplifier performs nearly the same as a system incorporating an APD.

  2. All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region.

    PubMed

    Garín, M; Fenollosa, R; Alcubilla, R; Shi, L; Marsal, L F; Meseguer, F

    2014-03-10

    Silicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show the first example of a photodiode developed on a micrometre scale sphere made of polycrystalline silicon whose photocurrent shows the Mie modes of a classical spherical resonator. The long dwell time of resonating photons enhances the photocurrent response, extending it into the infrared region well beyond the absorption edge of bulk silicon. It opens the door for developing solar cells and photodetectors that may harvest infrared light more efficiently than silicon photovoltaic devices that are so far developed.

  3. Dark Current Degradation of Near Infrared Avalanche Photodiodes from Proton Irradiation

    NASA Technical Reports Server (NTRS)

    Becker, Heidi N.; Johnston, Allan H.

    2004-01-01

    InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.

  4. The 1.06 micrometer avalanche photodiode detectors with integrated circuit preamplifiers

    NASA Technical Reports Server (NTRS)

    Eden, R. C.

    1975-01-01

    The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short-pulse detection, is reported. This work entailed both the development of a new type of heterojunction 3-5 semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low-noise preamp design making use of GaAs Schottky barrier-gate field effect transistors.

  5. Nanofabrication of Hybrid Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Dibos, Alan Michael

    The material requirements for optoelectronic devices can vary dramatically depending on the application. Often disparate material systems need to be combined to allow for full device functionality. At the nanometer scale, this can often be challenging because of the inherent chemical and structural incompatibilities of nanofabrication. This dissertation concerns the integration of seemingly dissimilar materials into hybrid optoelectronic devices for photovoltaic, plasmonic, and photonic applications. First, we show that combining a single strip of conjugated polymer and inorganic nanowire can yield a nanoscale solar cell, and modeling of optical absorption and exciton diffusion in this device can provide insight into the efficiency of charge separation. Second, we use an on-chip nanowire light emitting diode to pump a colloidal quantum dot coupled to a silver waveguide. The resulting device is an electro-optic single plasmon source. Finally, we transfer diamond waveguides onto near-field avalanche photodiodes fabricated from GaAs. Embedded in the diamond waveguides are nitrogen vacancy color centers, and the mapping of emission from these single-photon sources is demonstrated using our on-chip detectors, eliminating the need for external photodetectors on an optical table. These studies show the promise of hybrid optoelectronic devices at the nanoscale with applications in alternative energy, optical communication, and quantum optics.

  6. From hybrid swarms to swarms of hybrids

    USGS Publications Warehouse

    Stohlgren, Thomas J.; Szalanski, Allen L; Gaskin, John F.; Young, Nicholas E.; West, Amanda; Jarnevich, Catherine S.; Tripodi, Amber

    2014-01-01

    Science has shown that the introgression or hybridization of modern humans (Homo sapiens) with Neanderthals up to 40,000 YBP may have led to the swarm of modern humans on earth. However, there is little doubt that modern trade and transportation in support of the humans has continued to introduce additional species, genotypes, and hybrids to every country on the globe. We assessed the utility of species distributions modeling of genotypes to assess the risk of current and future invaders. We evaluated 93 locations of the genus Tamarix for which genetic data were available. Maxent models of habitat suitability showed that the hybrid, T. ramosissima x T. chinensis, was slightly greater than the parent taxa (AUCs > 0.83). General linear models of Africanized honey bees, a hybrid cross of Tanzanian Apis mellifera scutellata and a variety of European honey bee including A. m. ligustica, showed that the Africanized bees (AUC = 0.81) may be displacing European honey bees (AUC > 0.76) over large areas of the southwestern U.S. More important, Maxent modeling of sub-populations (A1 and A26 mitotypes based on mDNA) could be accurately modeled (AUC > 0.9), and they responded differently to environmental drivers. This suggests that rapid evolutionary change may be underway in the Africanized bees, allowing the bees to spread into new areas and extending their total range. Protecting native species and ecosystems may benefit from risk maps of harmful invasive species, hybrids, and genotypes.

  7. GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

    SciTech Connect

    Tseng, H. H.; Li, H.; Mashanov, V.; Yang, Y. J.; Cheng, H. H.; Chang, G. E.; Soref, R. A.; Sun, G.

    2013-12-02

    We report an investigation of GeSn-based p-i-n photodiodes with an active GeSn layer that is almost fully strained. The results show that (a) the response of the Ge/GeSn/Ge heterojunction photodiodes is stronger than that of the reference Ge-based photodiodes at photon energies above the 0.8 eV direct bandgap of bulk Ge (<1.55 μm), and (b) the optical response extends to lower energy regions (1.55–1.80 μm wavelengths) as characterized by the strained GeSn bandgap. A cusp-like spectral characteristic is observed for samples with high Sn contents, which is attributed to the significant strain-induced energy splitting of heavy and light hole bands. This work represents a step forward in developing GeSn-based infrared photodetectors.

  8. Silicon-on-insulator shortwave infrared wavelength meter with integrated photodiodes for on-chip laser monitoring.

    PubMed

    Muneeb, M; Ruocco, A; Malik, A; Pathak, S; Ryckeboer, E; Sanchez, D; Cerutti, L; Rodriguez, J B; Tournié, E; Bogaerts, W; Smit, M K; Roelkens, G

    2014-11-03

    This paper demonstrates a very compact wavelength meter for on-chip laser monitoring in the shortwave infrared wavelength range based on an optimized arrayed waveguide grating (AWG) filter with an integrated photodiode array. The AWG response is designed to obtain large nearest neighbor crosstalk (i.e. large overlap) between output channels, which allows accurately measuring the wavelength of a laser under test using the centroid detection technique. The passive AWG is fabricated on a 220 nm silicon-on-insulator (SOI) platform and is combined with GaInAsSb-based photodiodes. The photodiodes are heterogeneously integrated on the output grating couplers of the AWG using DVS-BCB adhesive bonding. The complete device with AWG and detectors has a footprint of only 2 mm(2) while the measured accuracy and resolution of the detected wavelength is better than 20pm.

  9. A selective Pt-CdS photodiode to monitor erythemal flux.

    PubMed

    Richards, D L; Davies, R E; Boone, J L

    1998-11-01

    The design and potential benefit of a solar ultraviolet (UV) radiometer reporting a maximum instantaneous flux of erythemally weighted heterogeneous energy is considered. The proposed device is electronically peak detecting; the user would ideally 'point and paint' the sun to find a localized maximum. A projected exposure time can be calculated from an instantaneous reading of erythemally weighted flux for a given minimal erythemal dose (MED) specified by the user. This calculation, though not necessarily providing a true exposure time, may be useful and informative in that it serves as a more 'recognizable' measure of erythemal flux and introduces a custom scale for each individual via their MED. Erythemal flux is calculated as the weighted integral sum [symbol: see text]j(lambda,t) epsilon(lambda) d lambda, where j (lambda, t) is the instantaneous angular integrated spectral irradiance accepted by human skin. This instrument proposal uses a single interference filter over a Pt-CdS photodiode; the interference filter is offered as a nominal design transmittance. The simulated response of the selective photodiode has a near-linear relation to the effective irradiance. Test inputs for evaluation purposes and to elucidate a transducer response are constructed from a spline interpolation of the World Radiation Center (WRC) spectrum and classic transmittance models. Our desired erythemal flux is offered in interconvertible UV Indexes (UVIs) as a function of zenith angle and atmosphere, characterized by elevation, ozone path, and turbidity.

  10. Photodiode-based cutting interruption sensor for near-infrared lasers.

    PubMed

    Adelmann, B; Schleier, M; Neumeier, B; Hellmann, R

    2016-03-01

    We report on a photodiode-based sensor system to detect cutting interruptions during laser cutting with a fiber laser. An InGaAs diode records the thermal radiation from the process zone with a ring mirror and optical filter arrangement mounted between a collimation unit and a cutting head. The photodiode current is digitalized with a sample rate of 20 kHz and filtered with a Chebyshev Type I filter. From the measured signal during the piercing, a threshold value is calculated. When the diode signal exceeds this threshold during cutting, a cutting interruption is indicated. This method is applied to sensor signals from cutting mild steel, stainless steel, and aluminum, as well as different material thicknesses and also laser flame cutting, showing the possibility to detect cutting interruptions in a broad variety of applications. In a series of 83 incomplete cuts, every cutting interruption is successfully detected (alpha error of 0%), while no cutting interruption is reported in 266 complete cuts (beta error of 0%). With this remarkable high detection rate and low error rate, the possibility to work with different materials and thicknesses in combination with the easy mounting of the sensor unit also to existing cutting machines highlight the enormous potential for this sensor system in industrial applications.

  11. Ultrafast uni-traveling-carrier photodiodes for measurement and sensing systems

    NASA Astrophysics Data System (ADS)

    Ito, Hiroshi; Nagatsuma, Tadao

    2003-07-01

    The uni-traveling-carrier photodiode (UTC-PD) is a newly developed photodiode that utilizes only electrons as the active carriers. This unique feature enables a UTC-PD to achieve excellent high-speed and high-output characteristics simultaneously. Fabricated devices exhibit a record 3-dB bandwidth of 310 GHz, a very-short electrical output pulse of less than 1 ps, high-power millimeter-wave generation at 100 GHz with an output power of over 20 mW, and a sub-millimeter-wave emission at frequencies of up to 800 GHz. The superior capabilities of the UTC-PD for generating wideband millimeter/sub-millimeter waves and very-short electrical pulse signals can innovate various measurement and sensing systems, for instance, millimeter-wave imaging or network analysis. A waveguide-output UTC-PD module with a maximum output power of over 10 mW at 100 GHz is practically important for the photonic-local system in radio telescopes.

  12. High-speed and high-output-power unitraveling-carrier photodiodes

    NASA Astrophysics Data System (ADS)

    Ito, Hiroshi; Nagatsuma, Tadao

    2003-08-01

    The uni-traveling-carrier photodiode (UTC-PD) is a novel photodiode that utilizes only electrons as the active carriers. This unique feature is the key to achieving excellent high-speed and high-output characteristics simultaneously. A record 3-dB bandwidth of 310 GHz and a millimeter-wave output power of over 20 mW at 100 GHz have already been achieved. The superior capability of the UTC-PD for generating very-large high-bit-rate electrical signals as well as a very-high output power in millimeter/sub-millimeter ranges can innovate various systems, such as broadband optical communications systems, wireless communications systems, and high-frequency measurement systems. Achievements include photoreceivers of up to 80 Gbit/s, DEMUX operations using an integrated optical gate of up to 320 Gbit/s, and a 10-Gbit/s millimeter-wave wireless link at 120 GHz. Also achieved has been high-power millimeter generation of 17 mW at 120 GHz with a waveguide-output UTC-PD module, considered for use in the photonic-local system of radio telescopes.

  13. Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging

    PubMed Central

    Resetar, Tomislav; De Munck, Koen; Haspeslagh, Luc; Rosmeulen, Maarten; Süss, Andreas; Puers, Robert; Van Hoof, Chris

    2016-01-01

    This work explores the benefits of linear-mode avalanche photodiodes (APDs) in high-speed CMOS imaging as compared to different approaches present in literature. Analysis of APDs biased below their breakdown voltage employed in single-photon counting mode is also discussed, showing a potentially interesting alternative to existing Geiger-mode APDs. An overview of the recently presented gated pinned avalanche photodiode pixel concept is provided, as well as the first experimental results on a 8 × 16 pixel test array. Full feasibility of the proposed pixel concept is not demonstrated; however, informative data is obtained from the sensor operating under −32 V substrate bias and clearly exhibiting wavelength-dependent gain in frontside illumination. The readout of the chip designed in standard 130 nm CMOS technology shows no dependence on the high-voltage bias. Readout noise level of 15 e- rms, full well capacity of 8000e-, and the conversion gain of 75 µV/e- are extracted from the photon-transfer measurements. The gain characteristics of the avalanche junction are characterized on separate test diodes showing a multiplication factor of 1.6 for red light in frontside illumination. PMID:27537882

  14. Interplanetary space weather effects on Lunar Reconnaissance Orbiter avalanche photodiode performance

    NASA Astrophysics Data System (ADS)

    Clements, E. B.; Carlton, A. K.; Joyce, C. J.; Schwadron, N. A.; Spence, H. E.; Sun, X.; Cahoy, K.

    2016-05-01

    Space weather is a major concern for radiation-sensitive space systems, particularly for interplanetary missions, which operate outside of the protection of Earth's magnetic field. We examine and quantify the effects of space weather on silicon avalanche photodiodes (SiAPDs), which are used for interplanetary laser altimeters and communications systems and can be sensitive to even low levels of radiation (less than 50 cGy). While ground-based radiation testing has been performed on avalanche photodiode (APDs) for space missions, in-space measurements of SiAPD response to interplanetary space weather have not been previously reported. We compare noise data from the Lunar Reconnaissance Orbiter (LRO) Lunar Orbiter Laser Altimeter (LOLA) SiAPDs with radiation measurements from the onboard Cosmic Ray Telescope for the Effects of Radiation (CRaTER) instrument. We did not find any evidence to support radiation as the cause of changes in detector threshold voltage during radiation storms, both for transient detector noise and long-term average detector noise, suggesting that the approximately 1.3 cm thick shielding (a combination of titanium and beryllium) of the LOLA detectors is sufficient for SiAPDs on interplanetary missions with radiation environments similar to what the LRO experienced (559 cGy of radiation over 4 years).

  15. GaN on Silicon Substrate with AlN Buffer Layer for UV Photodiode

    NASA Astrophysics Data System (ADS)

    Chuah, L. S.; Thahab, S. M.; Hassan, Z.

    Nitrogen plasma-assisted molecular beam epitaxy (PAMBE) deposited GaN thin films on (111) n-type silicon substrate with different thickness AlN buffer layers are investigated and distinguished by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman scattering. The thickness of AlN buffer layer ranged from 200 nm to 300 nm. Besides that, the electrical characteristics of the GaN thin film for ultraviolet detecting utilizations are studied by calculating the photo current/dark current ratio on a metal-semiconductor-metal (MSM) photodiode with and without the illumination of Hg-lamp source. The devices have been tested over room temperature (RT). The photocurrent analysis, together with the study of Schottky barrier height (SBH) development, ascertain that the principal mechanism of photo transport is thermionic emission. The photocurrent value is rigorously dependent on Schottky barrier height. The GaN/AlN(200 nm)/n-Si MSM photodiode produces the highest photo/dark current ratio for the lowest strain that consists of the GaN film grown on the AlN (200 nm) buffer layer.

  16. Narrowband Light Detection via Internal Quantum Efficiency Manipulation of Organic Photodiodes

    DOE PAGES

    Armin, A.; Jansen-van Vuuren, R. D.; Kopidakis, N.; ...

    2015-02-01

    Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetectors with state-of-the-art performance across critical response metrics. These devices are based on organic photodiodes with optically thick junctions. Paradoxically, we use broadband-absorbing organic semiconductors and utilize the electro-optical properties of the junction to create the narrowest NIR-band photoresponses yet demonstrated. In this context, these photodiodes outperform the encumbent technology (inputmore » filtered inorganic semiconductor diodes) and emerging technologies such as narrow absorber organic semiconductors or quantum nanocrystals. The design concept allows for response tuning and is generic for other spectral windows. Furthermore, it is materialagnostic and applicable to other disordered and polycrystalline semiconductors.« less

  17. A miniature cesium iodide-photodiode detector for ambulatory monitoring of left ventricular function.

    PubMed

    Millaire, A; Hossein-Foucher, C; Rousseau, J; Bedoui, H; Ducloux, G; Marchandise, X

    1994-05-01

    The physical characteristics of a portable nonimaging scintillation probe system for continuous ambulatory monitoring of the left ventricular function are described. The detector of the equilibrium radionuclide labeled blood pool is a single cesium iodide (CsI) crystal coupled to a silicium photodiode and interfaced to a microcomputer. The spatial properties of this small CsI crystal (1 x 1 x 1 cm3) were evaluated with various single-hole collimators. Linearity was studied in nonattenuating medium. Saturation began at 3000 cps, count loss was 10% at 4000 cps, maximal count rate was 24,000 cps. In attenuating medium, isocount curve of 5% of the maximal count rate was 100 mm deep and 160 mm wide. The most appropriate tested lead collimator to record the global ejection fraction of the left ventricle was a disc-shaped (thickness 5 mm, diameter 41 mm) single-hole (proximal aperture 8 mm, distal aperture 18 mm) collimator. Sensitivity was similar to the sensitivity of a sodium iodide nuclear probe. The detection performance appeared comparable to other available detector systems. Our results indicate that such a CsI-photodiode probe is a promising candidate for left ventricular function monitoring. The application to an ambulatory multicrystal detector system is presented and discussed.

  18. Reversed Three-Dimensional Visible Light Indoor Positioning Utilizing Annular Receivers with Multi-Photodiodes.

    PubMed

    Xu, Yinfan; Zhao, Jiaqi; Shi, Jianyang; Chi, Nan

    2016-08-08

    Exploiting the increasingly wide use of light emitting diodes (LEDs) lighting, in this paper we propose a reversed indoor positioning system (IPS) based on LED visible light communication (VLC) in order to improve indoor positioning accuracy. Unlike other VLC positioning systems, we employ two annular receivers with multi-photodiodes installed on the ceiling to locate the persons who carry LEDs. The basic idea is using multi-photodiodes to calculate the angle while using the received signal strength (RSS) method to calculate the distance. The experiment results show that the effective positioning range of the proposed system is 1.8 m when the distance between two receivers is 1.2 m. Moreover, a positioning error less than 0.2 m can be achieved under the condition that the radius of the PIN circle is between 0.16 m and 0.2 m, and the distance of the transmitter-receiver plane is less than 1.8 m, which will be effective in practice.

  19. Cd Hg Te (1.3 µm - 1.55 µm) Avalanche Photodiode

    NASA Astrophysics Data System (ADS)

    Meslage, J.; Pichard, G.; Fragnon, M.; Royer, M.; Nguyen Duy, M.; Biosrobert, C.; Morvan, D.

    1983-11-01

    The particular Cd0.7 Hg0.3Te band structure:almost equality of band gap and spin orbit splitting, provides good ionization properties to this alloy : a high ionization coefficients ratio is expected. The devices elaboration is made by planar technology. A N+/N/P+ structure is achieved by ions implantation followed by a diffusion process. A diffused guard ring allows to avoid surface and junction edge effects. The I (V) characteristic shows a breakdown voltage (VB) of about 100 V. The dark current at 0.95 VB, amounts 100nA.Photodiodes sensitivity is typiclly of 0.7. A/W when M=1.Multiplication coefficients as high as 40 have been measured, the photoresponse spatial homogeneity in gain mode has been also controlled with a lOμm size spot : no microplasma effect have been observed. Photodetectors sensitivity, measured at 500 MHz, remains identical in avalanche operating mode. Good linearity is obtained when plotting P-N schottky noise versus light intensity No excess noise was observed. The study of the avalanche photodiode noise, synchronous with 1.3. μm DEL emission, at 30 MHz with a 1 MHz bandwith has been carried out in relation to the multiplication factor, and has led to an estimation of the ionization coefficient ratio.

  20. Coated photodiode technique for the determination of the optical constants of reactive elements: La and Tb

    NASA Astrophysics Data System (ADS)

    Seely, John F.; Uspenskii, Yurii A.; Kjornrattanawanich, Benjawan; Windt, David L.

    2006-08-01

    A novel technique, utilizing thin films with protective capping layers deposited onto silicon photodiode substrates, has been developed to accurately determine the optical constants of reactive elements such as the rare earths and transition metals. Depositing protected layers on photodiode substrates has three primary advantages over the study of the transmittance of free-standing films and the angle-dependent reflectance of coatings on mirror substrates. First, it is easy to deposit a thin protective capping layer that prevents oxidation or contamination of the underlying reactive layer. Second, very thin layers of materials that have intrinsically low transmittance can be studied. Third, the optical constants are determined from the bulk properties of the protected layer and are not influenced by reflectance from the top surface that can be affected by oxidation or contamination. These and other benefits of this technique will be discussed, and results for La and Tb will be presented. The determined optical constants are significantly different from the CXRO and other tabulated values. The rare earth (lanthanide) elements with atomic numbers 57-71 have 5d or 4f open shells, and this open shell structure results in transmission windows in the extreme ultraviolet wavelength range >45 nm where materials typically have low transmittance. These transmission windows make possible the fabrication of a new class of multilayer interference coatings, based on rare earth elements, with relatively high peak reflectances and narrow reflectance profiles, both important factors for the imaging of solar and laboratory radiation sources with multilayer telescopes.

  1. Interplanetary Space Weather Effects on Lunar Reconnaissance Orbiter Avalanche Photodiode Performance

    NASA Technical Reports Server (NTRS)

    Clements, E. B.; Carlton, A. K.; Joyce, C. J.; Schwadron, N. A.; Spence, H. E.; Sun, X.; Cahoy, K.

    2016-01-01

    Space weather is a major concern for radiation-sensitive space systems, particularly for interplanetary missions, which operate outside of the protection of Earth's magnetic field. We examine and quantify the effects of space weather on silicon avalanche photodiodes (SiAPDs), which are used for interplanetary laser altimeters and communications systems and can be sensitive to even low levels of radiation (less than 50 cGy). While ground-based radiation testing has been performed on avalanche photodiode (APDs) for space missions, in-space measurements of SiAPD response to interplanetary space weather have not been previously reported. We compare noise data from the Lunar Reconnaissance Orbiter (LRO) Lunar Orbiter Laser Altimeter (LOLA) SiAPDs with radiation measurements from the onboard Cosmic Ray Telescope for the Effects of Radiation (CRaTER) instrument. We did not find any evidence to support radiation as the cause of changes in detector threshold voltage during radiation storms, both for transient detector noise and long-term average detector noise, suggesting that the approximately 1.3 cm thick shielding (a combination of titanium and beryllium) of the LOLA detectors is sufficient for SiAPDs on interplanetary missions with radiation environments similar to what the LRO experienced (559 cGy of radiation over 4 years).

  2. Narrowband light detection via internal quantum efficiency manipulation of organic photodiodes

    NASA Astrophysics Data System (ADS)

    Armin, Ardalan; Jansen-van Vuuren, Ross D.; Kopidakis, Nikos; Burn, Paul L.; Meredith, Paul

    2015-02-01

    Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetectors with state-of-the-art performance across critical response metrics. These devices are based on organic photodiodes with optically thick junctions. Paradoxically, we use broadband-absorbing organic semiconductors and utilize the electro-optical properties of the junction to create the narrowest NIR-band photoresponses yet demonstrated. In this context, these photodiodes outperform the encumbent technology (input filtered inorganic semiconductor diodes) and emerging technologies such as narrow absorber organic semiconductors or quantum nanocrystals. The design concept allows for response tuning and is generic for other spectral windows. Furthermore, it is material-agnostic and applicable to other disordered and polycrystalline semiconductors.

  3. Reversed Three-Dimensional Visible Light Indoor Positioning Utilizing Annular Receivers with Multi-Photodiodes

    PubMed Central

    Xu, Yinfan; Zhao, Jiaqi; Shi, Jianyang; Chi, Nan

    2016-01-01

    Exploiting the increasingly wide use of light emitting diodes (LEDs) lighting, in this paper we propose a reversed indoor positioning system (IPS) based on LED visible light communication (VLC) in order to improve indoor positioning accuracy. Unlike other VLC positioning systems, we employ two annular receivers with multi-photodiodes installed on the ceiling to locate the persons who carry LEDs. The basic idea is using multi-photodiodes to calculate the angle while using the received signal strength (RSS) method to calculate the distance. The experiment results show that the effective positioning range of the proposed system is 1.8 m when the distance between two receivers is 1.2 m. Moreover, a positioning error less than 0.2 m can be achieved under the condition that the radius of the PIN circle is between 0.16 m and 0.2 m, and the distance of the transmitter-receiver plane is less than 1.8 m, which will be effective in practice. PMID:27509504

  4. Narrowband Light Detection via Internal Quantum Efficiency Manipulation of Organic Photodiodes

    SciTech Connect

    Armin, A.; Jansen-van Vuuren, R. D.; Kopidakis, N.; Burn, P. L.; Meredith, P.

    2015-02-01

    Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetectors with state-of-the-art performance across critical response metrics. These devices are based on organic photodiodes with optically thick junctions. Paradoxically, we use broadband-absorbing organic semiconductors and utilize the electro-optical properties of the junction to create the narrowest NIR-band photoresponses yet demonstrated. In this context, these photodiodes outperform the encumbent technology (input filtered inorganic semiconductor diodes) and emerging technologies such as narrow absorber organic semiconductors or quantum nanocrystals. The design concept allows for response tuning and is generic for other spectral windows. Furthermore, it is materialagnostic and applicable to other disordered and polycrystalline semiconductors.

  5. The performances photodiode and diode of ZnO thin film by atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Orak, İkram

    2016-12-01

    In this study, the photodiode and diode characterizations of Al/n-ZnO/p type Si heterostructure have been investigated with current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements. ZnO thin film has been deposited on p type Si by using atomic layer deposition technique. Some photodiode and diode parameters such as open circuit voltage (Voc), short circuit current (Isc), power efficiency(ηP), fill factor (FF), ideality factor (n) and barrier height (Φb) have calculated with I-V and C-V characteristics. Voc and Isc was found to be 0.094 V and 0.24 mA, respectively at 50 mW/cm2. n and Φb have been calculated 0.41 eV and 2.36, respectively. Especially, Negative capacitance has explained in the forward bias regions at room temperature and in dark condition. The C-V characterization of the Al/ZnO/p type Si heterostructure has been investigated under illumination condition. It can be said that the capacitance of device has been affected under illumination condition.

  6. Updated design for a low-noise, wideband transimpedance photodiode amplifier

    SciTech Connect

    Paul, S. F.; Marsala, R.

    2006-10-15

    The high-speed rotation diagnostic developed for Columbia's HBT-EP tokamak requires a high quantum efficiency, very low drift detector/amplifier combination. An updated version of the circuit developed originally for the beam emission spectroscopy experiment on TFTR is being used. A low dark current (2 nA at 15 V bias), low input source capacitance (2 pF) FFD-040 N-type Si photodiode is operated in photoconductive mode. It has a quantum efficiency of 40% at the 468.6 nm (He II line that is being observed). A low-noise field-effect transistor (InterFET IFN152 with e{sub Na}=1.2 nV/{radical}Hz) is used to reduce the noise in the transimpedance preamplifier (A250 AMPTEK op-amp) and a very high speed (unity-gain bandwidth=200 MHz) voltage feedback amplifier (LM7171) is used to restore the frequency response up to 100 kHz. This type of detector/amplifier is photon-noise limited at this bandwidth for incident light with a power of >{approx}2 nW. The circuit has been optimized using SIMETRIX 4.0 SPICE software and a prototype circuit has been tested successfully. Though photomultipliers and avalanche photodiodes can detect much lower light levels, for light levels >2 nW and a 10 kHz bandwidth, this detector/amplifier combination is more sensitive because of the absence of excess (internally generated) noise.

  7. Light emitting diode, photodiode-based fluorescence detection system for DNA analysis with microchip electrophoresis.

    PubMed

    Hall, Gordon H; Glerum, D Moira; Backhouse, Christopher J

    2016-02-01

    Electrophoretic separation of fluorescently end-labeled DNA after a PCR serves as a gold standard in genetic diagnostics. Because of their size and cost, instruments for this type of analysis have had limited market uptake, particularly for point-of-care applications. This might be changed through a higher level of system integration and lower instrument costs that can be realized through the use of LEDs for excitation and photodiodes for detection--if they provide sufficient sensitivity. Here, we demonstrate an optimized microchip electrophoresis instrument using polymeric fluidic chips with fluorescence detection of end-labeled DNA with a LOD of 0.15 nM of Alexa Fluor 532. This represents orders of magnitude improvement over previously reported instruments of this type. We demonstrate the system with an electrophoretic separation of two PCR products and their respective primers. We believe that this is the first LED-induced fluorescence microchip electrophoresis system with photodiode-based detection that could be used for standard applications of PCR and electrophoresis.

  8. Light helicity detection in MOS-based spin-photodiodes: An analytical model

    NASA Astrophysics Data System (ADS)

    Cantoni, M.; Rinaldi, C.

    2016-09-01

    In a metal-oxide-semiconductor-based spin-photodiode, the helicity of an incoming light is efficiently converted into an electrical signal by exploiting (i) the helicity dependence of the degree of optical spin orientation for photogenerated carriers in the semiconductor and (ii) the spin-dependent tunneling transmission of the insulating barrier between the semiconductor and a ferromagnetic metal. Here, we propose a theoretical model for predicting the electrical response of the device to a circularly polarized light, by integrating the Fert-Jaffrès framework [A. Fert and H. Jaffrès, Phys. Rev. B 64, 184420 (2001)] with a helicity-dependent photo-generation term. A figure of merit, related to the variation of the electrical response to the switching of the light helicity from right to left, is defined, and its dependence on the constitutive parameters of the device (barrier resistivity and spin selectivity, semiconductor resistivity and spin diffusion length) is shown. Finally, a simple analytical formula for identifying the optimal resistance barrier leading to the maximum efficiency is found and experimentally validated on Fe/MgO/Ge spin-photodiodes.

  9. InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation.

    PubMed

    Beling, Andreas; Cross, Allen S; Piels, Molly; Peters, Jon; Zhou, Qiugui; Bowers, John E; Campbell, Joe C

    2013-11-04

    High-linearity modified uni-traveling carrier photodiodes on silicon-on-insulator with low AM-to-PM conversion factor are demonstrated. The devices deliver more than 2.5 dBm RF output power up to 40 GHz and have an output third order intercept point of 30 dBm at 20 GHz. Photodiode arrays exceed a saturation current-bandwidth-product of 630 mA · GHz and reach unsaturated RF output power levels of 10 dBm at 20 GHz.

  10. Spatial distortion correction and crystal identification for MRI-compatible position-sensitive avalanche photodiode-based PET scanners

    PubMed Central

    Chaudhari, Abhijit J.; Joshi, Anand A.; Wu, Yibao; Leahy, Richard M.; Cherry, Simon R.; Badawi, Ramsey D.

    2009-01-01

    Position-sensitive avalanche photodiodes (PSAPDs) are gaining widespread acceptance in modern PET scanner designs, and owing to their relative insensitivity to magnetic fields, especially in those that are MRI-compatible. Flood histograms in PET scanners are used to determine the crystal of annihilation photon interaction and hence, for detector characterization and routine quality control. For PET detectors that use PSAPDs, flood histograms show a characteristic pincushion distortion when Anger logic is used for event positioning. A small rotation in the flood histogram is also observed when the detectors are placed in a magnetic field. We first present a general purpose automatic method for spatial distortion correction for flood histograms of PSAPD-based PET detectors when placed both inside and outside a MRI scanner. Analytical formulae derived for this scheme are based on a hybrid approach that combines desirable properties from two existing event positioning schemes. The rotation of the flood histogram due to the magnetic field is determined iteratively and is accounted for in the scheme. We then provide implementation details of a method for crystal identification we have previously proposed and evaluate it for cases when the PET detectors are both outside and in a magnetic field. In this scheme, Fourier analysis is used to generate a lower-order spatial approximation of the distortion-corrected PSAPD flood histogram, which we call the ‘template’. The template is then registered to the flood histogram using a diffeomorphic iterative intensity-based warping scheme. The calculated deformation field is then applied to the segmentation of the template to obtain a segmentation of the flood histogram. A manual correction tool is also developed for exceptional cases. We present a quantitative assessment of the proposed distortion correction scheme and crystal identification method against conventional methods. Our results indicate that our proposed methods lead

  11. Optimization of a guard ring structure in Geiger-mode avalanche photodiodes fabricated at National NanoFab Center

    NASA Astrophysics Data System (ADS)

    Lim, K. T.; Kim, H.; Cho, M.; Kim, Y.; Kim, C.; Kim, M.; Lee, D.; Kang, D.; Yoo, H.; Park, K.; Sul, W. S.; Cho, G.

    2016-01-01

    A typical Geiger-mode avalanche photodiode (G-APD) contains a guard ring that protects the structure from having an edge breakdown due to the lowering of electric fields at junction curvatures. In this contribution, G-APDs with a virtual guard ring (vGR) merged with n-type diffused guard ring (nGR) in various sizes were studied to find the optimal design for G-APDs fabricated at National NanoFab Center (NNFC) . The sensors were fabricated via a customized CMOS process with a micro-cell size of 65× 65 μm2 on a 200 mm p-type epitaxial layer wafer. I-V characteristic curves for proposed structures were measured on a wafer-level with an auto probing system and plotted together to compare their performance. A vGR width of 1.5 μm and a nGR width of 1.5 μm with an overlapping between vGR and nGR of 1.5 μm showed the lowest leakage current before the breakdown voltage while suppressing the edge breakdown. Furthermore, the current level of the lowest-leakage-current structure was as low as that of only vGR with a width of 2.0 μm, indicating that the structure is also area efficient. Based on these results, the design with vGR, nGR, and OL with width of 1.5 μm is determined to be the optimal structure for G-APDs fabricated at NNFC.

  12. Hybrid-integrated coherent receiver using silica-based planar lightwave circuit technology

    NASA Astrophysics Data System (ADS)

    Kim, Jong-Hoi; Choe, Joong-Seon; Choi, Kwang-Seong; Youn, Chun-Ju; Kim, Duk-Jun; Jang, Sun-Hyok; Kwon, Yong-Hwan; Nam, Eun-Soo

    2011-12-01

    A hybrid-integrated coherent receiver module has been achieved using flip-chip bonding technology, consisting of a silica-based 90°-hybrid planar lightwave circuit (PLC) platform, a spot-size converter integrated waveguide photodiode (SSC-WG-PD), and a dual-channel transimpedance amplifier (TIA). The receiver module shows error-free operation up to 40Gb/s and OSNR sensitivity of 11.5 dB for BER = 10-3 at 25 Gb/s.

  13. Low-Timing-Jitter Near-Infrared Single-Photon-Sensitive 16-Channel Intensified-Photodiode Detector

    NASA Technical Reports Server (NTRS)

    Krainak, Michael A.; Lu, Wei; Yang, Guangning; Sun, Xiaoli; Sykora, Derek; Jurkovic, Mike; Aebi, Verle; Costello, Ken; Burns, Richard

    2011-01-01

    We developed a 16-channel InGaAsP photocathode intensified-photodiode (IPD) detector with 78 ps (1-sigma) timing-jitter, less than 500 ps FWHM impulse response, greater than 15% quantum efficiency at 1064 nm wavelength with 131 kcps dark counts at 15 C.

  14. Effect of the lithium diffusion into n-type silicon on the spectral response of the Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Keffous, A.; Siad, M.; Belkacem, Y.; Zitouni, M. A.; Benrakaa, N.; Menari, H.; Dahmani, A.; Chergui, W.; Cheriet, A.

    2003-07-01

    Silicon Schottky photodiode is a good candidate for UV-Vis light detection and ideal for high speed applications, where it has many advantages. One of them is the inherent absence of any component associated with minority carrier effects, and it appears to have a good quantum efficiency in the UV-Vis spectral range. In this work, Schottky contact of different gold thickness film was fabricated by thermal evaporation on highly resistive n-type silicon. A thin gold layer (Au) around 10 nm was used to fabricate the Schottky photodiode which has a good optical properties. These results show a good spectral response value of 0.014 and 0.22 A/W at 350 and 550 nm wavelength, respectively. The results were obtained under 0 V reverse bias voltage and without using an anti-reflection coating. A second measure of the spectral response taken after storing the photodiode in air for several days (30 days) shows a decrease of about 20-50% from the initial value. The decrease was due essentially to the diffusion of lithium from the back side to the front side. In addition, to the absence of surface photodiode edge protection.

  15. InGaAs Nanomembrane/Si van der Waals Heterojunction Photodiodes with Broadband and High Photoresponsivity.

    PubMed

    Um, Doo-Seung; Lee, Youngsu; Lim, Seongdong; Park, Jonghwa; Yen, Wen-Chun; Chueh, Yu-Lun; Kim, Hyung-Jun; Ko, Hyunhyub

    2016-10-05

    Development of broadband photodetectors is of great importance for applications in high-capacity optical communication, night vision, and biomedical imaging systems. While heterostructured photodetectors can expand light detection range, fabrication of heterostructures via epitaxial growth or wafer bonding still faces significant challenges because of problems such as lattice and thermal mismatches. Here, a transfer printing technique is used for the heterogeneous integration of InGaAs nanomembranes on silicon semiconductors and thus the formation of van der Waals heterojunction photodiodes, which can enhance the spectral response and photoresponsivity of Si photodiodes. Transfer-printed InGaAs nanomembrane/Si heterojunction photodiode exhibits a high rectification ratio (7.73 × 10(4) at ±3 V) and low leakage current (7.44 × 10(-5) A/cm(2) at -3 V) in a dark state. In particular, the photodiode shows high photoresponsivities (7.52 and 2.2 A W(-1) at a reverse bias of -3 V and zero bias, respectively) in the broadband spectral range (400-1250 nm) and fast rise-fall response times (13-16 ms), demonstrating broadband and fast photodetection capabilities. The suggested III-V/Si van der Waals heterostructures can be a robust platform for the fabrication of high-performance on-chip photodetectors compatible with Si integrated optical chips.

  16. Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.

    SciTech Connect

    Blansett, Ethan L.; Geib, Kent Martin; Cich, Michael Joseph; Wrobel, Theodore Frank; Peake, Gregory Merwin; Fleming, Robert M.; Serkland, Darwin Keith; Wrobel, Diana L.

    2008-01-01

    A previous LDRD studying radiation hardened optoelectronic components for space-based applications led to the result that increased neutron irradiation from a fast-burst reactor caused increased responsivity in GaAs photodiodes up to a total fluence of 4.4 x 10{sup 13} neutrons/cm{sup 2} (1 MeV Eq., Si). The silicon photodiodes experienced significant degradation. Scientific literature shows that neutrons can both cause defects as well as potentially remove defects in an annealing-like process in GaAs. Though there has been some modeling that suggests how fabrication and radiation-induced defects can migrate to surfaces and interfaces in GaAs and lead to an ordering effect, it is important to consider how these processes affect the performance of devices, such as the basic GaAs p-i-n photodiode. In this LDRD, we manufactured GaAs photodiodes at the MESA facility, irradiated them with electrons and neutrons at the White Sands Missile Range Linac and Fast Burst Reactor, and performed measurements to show the effect of irradiation on dark current, responsivity and high-speed bandwidth.

  17. Reset noise suppression in two-dimensional CMOS photodiode pixels through column-based feedback-reset

    NASA Technical Reports Server (NTRS)

    Pain, B.; Cunningham, T. J.; Hancock, B.; Yang, G.; Seshadri, S.; Ortiz, M.

    2002-01-01

    We present new CMOS photodiode imager pixel with ultra-low read noise through on-chip suppression of reset noise via column-based feedback circuitry. The noise reduction is achieved without introducing any image lag, and with insignificant reduction in quantum efficiency and full well.

  18. 16-element photodiode array for the angular microdeflection detector and for stabilization of a laser radiation direction

    NASA Astrophysics Data System (ADS)

    Wegrzecki, Maciej; Piotrowski, Tadeusz; Bar, Jan; Dobrowolski, Rafał; Klimov, Andrii; Klos, Helena; Marchewka, Michał; Nieprzecki, Marek; Panas, Andrzej; Prokaryn, Piotr; Seredyński, Bartłomiej; Sierakowski, Andrzej; Słysz, Wojciech; Szmigiel, Dariusz; Zaborowski, Michal

    2016-12-01

    In this paper, the design and technology of two types of 16-element photodiode arrays is described. The arrays were developed by the ITE and are to be used in detection of microdeflection of laser radiation at the Institute of Metrology and Biomedical Engineering in the Faculty of Mechatronics of Warsaw University of Technology. The electrical and photoelectrical parameters of the arrays are presented.

  19. Temperature-dependent characteristics of near-infrared organic bulk heterojunction photodiodes (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Wu, Zhenghui; Yao, Weichuan; Azoulay, Jason D.; Ng, Tse Nga

    2016-09-01

    Photosensors responsive to the short wavelength infrared (SWIR) spectra are used in a variety of applications including environmental monitoring, medical diagnosis and optical communications. However, most organic semiconductors do not absorb in the SWIR region. Here we show novel donor-acceptor polymers with narrow bandgap responsive in the SWIR region, and the polymers are processed into photodiodes with structure of ITO/PEDOT:PSS/Bulk Heterojunction (BHJ)/Al. The performance of devices with different polymer structures are compared through metrics including detectivity, quantum efficiency, response time and rectification ratio, to determine the mechanisms of charge recombination loss in charge transfer states and charge transport process. We also use different solution-processed interfacial functional layers (e.g. ZnO, MoO3, TiO2) as electrode interface structures. The results provide guideline for selecting suitable polymers and design of device structures, to enable high performance SWIR photosensor via scalable solution-processed fabrication.

  20. Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes

    NASA Astrophysics Data System (ADS)

    Rommel, Sean L.; Erby, David N.; Gao, Wei; Berger, Paul R.; Zydzik, George J.; Rhodes, W. W.; O'Bryan, H. M.; Sivco, Deborah L.; Cho, Alfred Y.

    1997-04-01

    Metal-semiconductor-metal (MSM) photodiodes with electrodes fabricated from the transparent conductor cadmium tin oxide (CTO) have been shown to double photoresponsivity. Their bandwidths, however, are significantly lower than those of MSMs fabricated with standard Ti/Au contacts. Though MSMs are generally believed to be limited by the transit time of electrons, it is possible the larger resistivity of CTO has become a significant factor, making the MSMs RC time constant limited instead. Previous models of MSMs only account for one of the two back-to-back Schottky diodes. A new model which takes into account both the forward and reverse biased junctions has been developed from the small signal model of a Schottky diode. This new model was fit to data obtained from S-parameter measurements, and incorporates both the transit time response and RC time constant response.

  1. Spray coated indium-tin-oxide-free organic photodiodes with PEDOT:PSS anodes

    SciTech Connect

    Schmidt, Morten Falco, Aniello; Loch, Marius; Lugli, Paolo; Scarpa, Giuseppe

    2014-10-15

    In this paper we report on Indium Tin Oxide (ITO)-free spray coated organic photodiodes with an active layer consisting of a poly(3-hexylthiophen) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend and patterned poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrodes. External quantum efficiency and current voltage characteristics under illuminated and dark conditions as well as cut-off frequencies for devices with varying active and hole conducting layer thicknesses were measured in order to characterize the fabricated devices. 60% quantum efficiency as well as nearly four orders of magnitude on-off ratios have been achieved. Those values are comparable with standard ITO devices.

  2. Analysis of genetically modified organisms by pyrosequencing on a portable photodiode-based bioluminescence sequencer.

    PubMed

    Song, Qinxin; Wei, Guijiang; Zhou, Guohua

    2014-07-01

    A portable bioluminescence analyser for detecting the DNA sequence of genetically modified organisms (GMOs) was developed by using a photodiode (PD) array. Pyrosequencing on eight genes (zSSIIb, Bt11 and Bt176 gene of genetically modified maize; Lectin, 35S-CTP4, CP4EPSPS, CaMV35S promoter and NOS terminator of the genetically modified Roundup ready soya) was successfully detected with this instrument. The corresponding limit of detection (LOD) was 0.01% with 35 PCR cycles. The maize and soya available from three different provenances in China were detected. The results indicate that pyrosequencing using the small size of the detector is a simple, inexpensive, and reliable way in a farm/field test of GMO analysis.

  3. Cramer-Rao lower bound on range error for LADARs with Geiger-mode avalanche photodiodes.

    PubMed

    Johnson, Steven E

    2010-08-20

    The Cramer-Rao lower bound (CRLB) on range error is calculated for laser detection and ranging (LADAR) systems using Geiger-mode avalanche photodiodes (GMAPDs) to detect reflected laser pulses. For the cases considered, the GMAPD range error CRLB is greater than the CRLB for a photon-counting device. It is also shown that the GMAPD range error CRLB is minimized when the mean energy in the received laser pulse is finite. Given typical LADAR system parameters, a Gaussian-envelope received pulse, and a noise detection rate of less than 4 MHz, the GMAPD range error CRLB is minimized when the quantum efficiency times the mean number of received laser pulse photons is between 2.2 and 2.3.

  4. Signal-to-noise ratio of Geiger-mode avalanche photodiode single-photon counting detectors

    NASA Astrophysics Data System (ADS)

    Kolb, Kimberly

    2014-08-01

    Geiger-mode avalanche photodiodes (GM-APDs) use the avalanche mechanism of semiconductors to amplify signals in individual pixels. With proper thresholding, a pixel will be either "on" (avalanching) or "off." This discrete detection scheme eliminates read noise, which makes these devices capable of counting single photons. Using these detectors for imaging applications requires a well-developed and comprehensive expression for the expected signal-to-noise ratio (SNR). This paper derives the expected SNR of a GM-APD detector in gated operation based on gate length, number of samples, signal flux, dark count rate, photon detection efficiency, and afterpulsing probability. To verify the theoretical results, carrier-level Monte Carlo simulation results are compared to the derived equations and found to be in good agreement.

  5. Application of PN and avalanche silicon photodiodes to low-level optical

    NASA Technical Reports Server (NTRS)

    Eppeldauer, G.; Schaefer, A. R.

    1988-01-01

    New approaches to the discovery of other planetary systems require very sensitive and stable detection techniques in order to succeed. Two methods in particular, the astrometric and the photometric methods, require this. To begin understanding the problems and limitations of solid state detectors regarding this application, preliminary experiments were performed at the National Bureau of Standards and a low light level detector characterization facility was built. This facility is briefly described, and the results of tests conducted in it are outlined. A breadboard photometer that was used to obtain stellar brightness ratio precision data is described. The design principles of PN and avalanche silicon photodiodes based on low light level measuring circuits are discussed.

  6. A method to precisely identify the afterpulses when using the S9717 avalanche photodiode

    SciTech Connect

    Rusu, Alexandru Rusu, Lucian

    2015-12-07

    The detection ratio of an avalanche photodiode (APD) biased in Geiger-mode increases versus the excess voltage; the afterpulsing rate increases too. The last one can be reduced by inserting an artificial dead time and accepting a lower measuring top rate. So, in order to tune a single-photon detector system, it is necessary to exactly identify afterpulses and measure their rate; the experimental results are presented. When using the S9717 APD in Geiger-mode, the cathode to ground voltage waveform reveals the existence of a particular sequence of pulses: a usual one followed, within 1μs, by a least one appearing to have been generated for negative excess voltage values. All these characteristics are the signature of the afterpulsing generation. Based on this observation, we were able to precisely measure the afterpulsing rate.

  7. Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

    NASA Technical Reports Server (NTRS)

    Menkara, H. M.; Wagner, B. K.; Summers, C. J.

    1995-01-01

    A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

  8. Temporal and spatial multiplexed infrared single-photon counter based on high-speed avalanche photodiode

    PubMed Central

    Chen, Xiuliang; Ding, Chengjie; Pan, Haifeng; Huang, Kun; Laurat, Julien; Wu, Guang; Wu, E

    2017-01-01

    We report on a high-speed temporal and spatial multiplexed single-photon counter with photon-number-resolving capability up to four photons. The infrared detector combines a fiber loop to split, delay and recombine optical pulses and a 200 MHz dual-channel single-photon detector based on InGaAs/InP avalanche photodiode. To fully characterize the photon-number-resolving capability, we perform quantum detector tomography and then reconstruct its positive-operator-valued measure and the associated Wigner functions. The result shows that, despite of the afterpulsing noise and limited system detection efficiency, this temporal and spatial multiplexed single-photon counter can already find applications for large repetition rate quantum information schemes. PMID:28294155

  9. Predictions of silicon avalanche photodiode detector performance in water vapor differential absorption lidar

    NASA Technical Reports Server (NTRS)

    Kenimer, R. L.

    1988-01-01

    Performance analyses are presented which establish that over most of the range of signals expected for a down-looking differential absorption lidar (DIAL) operated at 16 km the silicon avalanche photodiode (APD) is the preferred detector for DIAL measurements of atmospheric water vapor in the 730 nm spectral region. The higher quantum efficiency of the APD's, (0.8-0.9) compared to a photomultiplier's (0.04-0.18) more than offsets the higher noise of an APD receiver. In addition to offering lower noise and hence lower random error the APD's excellent linearity and impulse recovery minimize DIAL systematic errors attributable to the detector. Estimates of the effect of detector system parameters on overall random and systematic DIAL errors are presented, and performance predictions are supported by laboratory characterization data for an APD receiver system.

  10. Temporal and spatial multiplexed infrared single-photon counter based on high-speed avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Chen, Xiuliang; Ding, Chengjie; Pan, Haifeng; Huang, Kun; Laurat, Julien; Wu, Guang; Wu, E.

    2017-03-01

    We report on a high-speed temporal and spatial multiplexed single-photon counter with photon-number-resolving capability up to four photons. The infrared detector combines a fiber loop to split, delay and recombine optical pulses and a 200 MHz dual-channel single-photon detector based on InGaAs/InP avalanche photodiode. To fully characterize the photon-number-resolving capability, we perform quantum detector tomography and then reconstruct its positive-operator-valued measure and the associated Wigner functions. The result shows that, despite of the afterpulsing noise and limited system detection efficiency, this temporal and spatial multiplexed single-photon counter can already find applications for large repetition rate quantum information schemes.

  11. Radiation effects induced in pin photodiodes by 40- and 85-MeV protons

    NASA Technical Reports Server (NTRS)

    Becher, J.; Kernell, R. L.; Reft, C. S.

    1985-01-01

    PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

  12. Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals

    SciTech Connect

    Korsunska, N. E.; Shulga, E. P.; Stara, T. R. Litvin, P. M.; Bondarenko, V. A.

    2016-01-15

    The effect of ultraviolet (UV) illumination on the electrical and spectral characteristics of Schottky-barrier photodiodes based on ZnS single crystals is studied. It is found that irradiation deteriorates their photosensitivity and changes the current–voltage and capacitance–voltage characteristics and the surface profile of the blocking electrode. It is shown that the main reason for a decrease in the photosensitivity of the diodes is the photoinduced drift of mobile donors in the electric field of the barrier. This drift depends on the crystallographic orientation of the surface being irradiated. Another photoinduced process observed in the diodes is photolysis of the ZnS crystal. This process mainly determines the change in the electrical characteristics of the diodes and in the surface profile of the electrode at an insignificant change in the photosensitivity.

  13. Determination of acaricides in honey by high-performance liquid chromatography with photodiode array detection.

    PubMed

    Martel, Anne-Claire; Zeggane, Sarah

    2002-04-19

    Rapid analytical methods are described to control quality of honeys, concerning residues of acaricides applied in hives to prevent Varroa jacobsoni infestation. A liquid-liquid extraction with hexane-propanol-2-ammonia (60 ml:30 ml:0.28%) was used for the simultaneous analysis of coumaphos, bromopropylate, amitraz and fluvalinate. For thymol, one clean up on a solid-phase extraction C18 (500 mg, 6 ml) column was performed; for rotenone, a liquid extraction with dichloromethane was realised. Quantitative recoveries obtained with honey were satisfactory and were superior to 80%. All acaricides are identified by reversed-phase high-performance liquid chromatography with photodiode array detection. Quantification limits obtained were below maximal residue limits when these exist.

  14. Switching characteristic and capacitance analysis of a-Si:H pinpin photodiodes for visible range telecommunications

    NASA Astrophysics Data System (ADS)

    Fantoni, A.; Fernandes, M.; Louro, P.; Vieira, M.

    2016-05-01

    The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device.

  15. Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors

    NASA Astrophysics Data System (ADS)

    Chen, Cao; Bing, Zhang; Junfeng, Wang; Longsheng, Wu

    2016-05-01

    The charge transfer potential barrier (CTPB) formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode (PPD) CMOS image sensors (CIS), and is difficult to measure straightforwardly since it is embedded inside the device. From an understanding of the CTPB formation mechanism, we report on an alternative method to feasibly measure the CTPB height by performing a linear extrapolation coupled with a horizontal left-shift on the sensor photoresponse curve under the steady-state illumination. The theoretical study was performed in detail on the principle of the proposed method. Application of the measurements on a prototype PPD-CIS chip with an array of 160 × 160 pixels is demonstrated. Such a method intends to shine new light on the guidance for the lag-free and high-speed sensors optimization based on PPD devices. Project supported by the National Defense Pre-Research Foundation of China (No. 51311050301095).

  16. Evaluation of a PIN Photodiode Detector in Neutron-Gamma Fields

    NASA Astrophysics Data System (ADS)

    Cárdenas, José Patricio N.; Campos, Letícia L.; Filho, Tufic Madi

    2011-08-01

    Semiconductor detectors are suitable for applications in radiation dosimetry in nuclear research reactors and for radiation protection purposes. The performance of these detectors depends on the quality of their semiconductor. The aim of this work was to evaluate a commercial PIN Photodiode in the neutron-gamma fields of the IEA-R1 nuclear research reactor and from an AmBe neutron source. This semiconductor was studied as a neutron detector using some types of converters to determine a dose-to-counts conversion factor to dose equivalent. The results have shown that this component may be implemented for assessing the neutron spectra in some radiation fields and in dose equivalent in radiation protection routines.

  17. High-resolution mapping of quantum efficiency of silicon photodiode via optical-feedback laser microthermography

    SciTech Connect

    Cemine, Vernon Julius; Blanca, Carlo Mar; Saloma, Caesar

    2006-09-20

    We map the external quantum efficiency (QE) distribution of a silicon photodiode (PD) sample via a thermographic imaging technique based on optical-feedback laser confocal microscopy. An image pair consisting of the confocal reflectance image and the 2D photocurrent map is simultaneously acquired to delineate the following regions of interest on the sample: the substrate, the n-type region, the pn overlay, and the bonding pad. The 2D QE distribution is derived from the photocurrent map to quantify the optical performance of these sites. The thermal integrity of the sample is then evaluated by deriving the rate of change of QE with temperature T at each point on the silicon PD. These gradient maps function not only as stringent measures of local thermal QE activity but they also expose probable defect locations on the sample at high spatial resolution - a capability that is not feasible with existing bulk measurement techniques.

  18. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    SciTech Connect

    Čermák, Jan Rezek, Bohuslav; Koide, Yasuo; Takeuchi, Daisuke

    2014-02-07

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

  19. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes.

    PubMed

    Farrell, Alan C; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M; Huffaker, Diana L

    2015-12-02

    Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III-V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure.

  20. Supercontinuum Fourier transform spectrometry with balanced detection on a single photodiode

    DOE PAGES

    Goncharov, Vasily; Hall, Gregory

    2016-08-25

    Here, we have developed phase-sensitive signal detection and processing algorithms for Fourier transform spectrometers fitted with supercontinuum sources for applications requiring ultimate sensitivity. Similar to well-established approach of source noise cancellation through balanced detection of monochromatic light, our method is capable of reducing the relative intensity noise of polychromatic light by 40 dB. Unlike conventional balanced detection, which relies on differential absorption measured with a well matched pair of photo-detectors, our algorithm utilizes phase-sensitive differential detection on a single photodiode and is capable of the real-time correction for instabilities in supercontinuum spectral structure over a broad range of wavelengths. Inmore » the resulting method is universal in terms of applicable wavelengths and compatible with commercial spectrometers. We present a proof-of-principle experimental« less

  1. Determination of diarylheptanoids from Alpinia officinarum (Lesser Galangal) by HPLC with photodiode array and electrochemical detection.

    PubMed

    Liu, Zhihua; Sang, Shengmin; Hartman, Thomas G; Ho, Chi-Tang; Rosen, Robert T

    2005-01-01

    Normal-phase column chromatography followed by semi-preparative reversed-phase HPLC has been used to isolate, from the rhizomes of Alpinia officinarum, five diarylheptanoids identified as 5-hydroxy-7-(4"-hydroxy-3"-methoxyphenyl)-1-phenyl-3-heptanone, 5-methoxy-7-(4"-hydroxy-3"-methoxyphenyl)-1-phenyl-3-heptanone, 7-(4"-hydroxyphenyl)-1-phenylhept-4-en-3-one, 7-(4"-hydroxy-3"-methoxyphenyl)-1-phenyl-hept-4-en-3-one, 1,7-diphenylhept-4-en-3-one. The levels of these five diarylheptanoids in root material were determined quantitatively by HPLC with UV detection and the assay methods so developed were simple, rapid and accurate. Four of the diarylheptanoids could also be detected by HPLC with electrochemical detection (ECD) in the oxidative mode, and ECD was found to have a higher sensitivity than photodiode array detection.

  2. An avalanche photodiode photon counting camera for high-resolution astronomy

    NASA Astrophysics Data System (ADS)

    Ryan, Oliver; Redfern, Mike; Shearer, Andrew

    2006-02-01

    A system is described which makes best use of the high quantum efficiency and high count rate capability of avalanche photodiodes for high time resolution observations of optical pulsars. The use of three APDs allows simultaneous photometry of the target and a reference star, and the monitoring of the sky background. By minimising the optical components in the light path the optical efficiency of the system is maximised. The TRIFFID (Shearer, A., Stappers, B., O'Connor, P., Golden, A., Strom, R., Redfern, M., Ryan, O.: Science 301, 493 495 (2003)) and OPTIMA (Straubmeier, C., Kanbach, G., Schrey, F.: Exp. Astron. 11, 157 170 (2001)) have shown that fibre-fed APD arrays can produce excellent results. This, new, system was used on the 6m BTA in November 2003 results on the Crab pulsar are presented.

  3. InGaAs communication photodiodes: from low to high power level designs

    NASA Astrophysics Data System (ADS)

    Achouche, M.

    2009-01-01

    While InGaAs absorption material has been used for various applications up to 1.6μm wavelength, specific designs for low level detection have become of main interest using high responsivity and low dark current detectors. By adding an avalanche multiplication layer to form an avalanche photodiode (APD) using the Separated Absorption and Multiplication (SAM) structure, one can take advantage of the very low noise properties of multiplication process in large bandgap Al(Ga)(In)As material to improve receiver sensitivity by >10dB. Under high power level injection, specific PIN structures have been developed to improve space charge effects as needed for power applications such as microwave analog photonic links. Specific designs to achieve simultaneously broad bandwidth, high responsivity, very high power saturation and high linearity will be discussed.

  4. Optimization of InGaAs/InAlAs Avalanche Photodiodes

    NASA Astrophysics Data System (ADS)

    Chen, Jun; Zhang, Zhengyu; Zhu, Min; Xu, Jintong; Li, Xiangyang

    2017-01-01

    In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of APD. We find that with the increase of the thicknesses as well as the doping concentrations of the charge layer and the multiplication layer, the punchthrough voltage increases; with the increase of the doping concentrations of two layers and the thickness of the charge layer, the breakdown voltage decreases; with the increase of the thickness of the multiplication layer, the breakdown voltage first rapidly declines and then slightly rises.

  5. Engineering steps for optimizing high temperature LWIR HgCdTe photodiodes

    NASA Astrophysics Data System (ADS)

    Madejczyk, Pawel; Gawron, Waldemar; Martyniuk, Piotr; Keblowski, Artur; Pusz, Wioletta; Pawluczyk, Jaroslaw; Kopytko, Malgorzata; Rutkowski, Jaroslaw; Rogalski, Antoni; Piotrowski, Jozef

    2017-03-01

    The authors report on energy gap engineering solutions to improve the high-temperature performance of long-wave infrared (LWIR) HgCdTe photodiodes. Metalorganic chemical vapour deposition (MOCVD) technology with a wide range of composition and donor/acceptor doping and without ex-situ post grown annealing seems to be an excellent tool for HgCdTe heterostructure epitaxial growth. The heterojunction HgCdTe photovoltaic device based on epitaxial graded gap structures integrated with Auger-suppression is a magnificent solution for high operating temperature (HOT) infrared detectors. The thickness, composition and doping of HgCdTe heterostructure were optimized with respect to photoelectrical parameters like dark current, the responsivity and the response time. In this paper we focus on graded interface abruptness in the progressive optimization.

  6. Reducing the Spikes of Avalanche Photodiode Measurements at the National Spherical Torus Experiment

    NASA Astrophysics Data System (ADS)

    Brubaker, Z. E.; Foley, E. L.

    2011-10-01

    Avalanche Photodiodes (APD) used at the National Spherical Torus Experiment (NSTX) make important measurements for the Motional Stark Effect (MSE) diagnostic. However, they are very sensitive, and if radiation consistently reaches these detectors they are damaged over time. Furthermore, they also display spikes in their readings, which greatly complicates the data analysis for MSE. Due to our Collisionally-Induced Fluorescence Motional Stark Effect diagnostic observing significant radiation despite being shielded by a 3 foot concrete wall, we must devise a plan for shielding our new Laser-Induced Fluorescence Motional Stark Effect diagnostic, as well as determining the best possible location for them. In order to reduce the amount of spikes seen in our readings and to preserve our detectors, I investigated the type of radiation responsible, the locations most affected, and tested various materials for shielding. Results will be presented.

  7. Supercontinuum Fourier transform spectrometry with balanced detection on a single photodiode

    SciTech Connect

    Goncharov, Vasily; Hall, Gregory

    2016-08-25

    Here, we have developed phase-sensitive signal detection and processing algorithms for Fourier transform spectrometers fitted with supercontinuum sources for applications requiring ultimate sensitivity. Similar to well-established approach of source noise cancellation through balanced detection of monochromatic light, our method is capable of reducing the relative intensity noise of polychromatic light by 40 dB. Unlike conventional balanced detection, which relies on differential absorption measured with a well matched pair of photo-detectors, our algorithm utilizes phase-sensitive differential detection on a single photodiode and is capable of the real-time correction for instabilities in supercontinuum spectral structure over a broad range of wavelengths. In the resulting method is universal in terms of applicable wavelengths and compatible with commercial spectrometers. We present a proof-of-principle experimental

  8. Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

    NASA Technical Reports Server (NTRS)

    Sullivan, William, III; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry

    2015-01-01

    An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

  9. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    NASA Astrophysics Data System (ADS)

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  10. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Farrell, Alan C.; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M.; Huffaker, Diana L.

    2015-12-01

    Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III-V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure.

  11. High-light-output scintillator for photodiode readout: LuI3:Ce3+

    NASA Astrophysics Data System (ADS)

    Birowosuto, M. D.; Dorenbos, P.; van Eijk, C. W. E.; Krämer, K. W.; Güdel, H. U.

    2006-06-01

    In this paper, we investigated the scintillation properties of LuI3:Ce3+. Radioluminescence, light output, energy resolution, and γ-scintillation decay are reported. We find an extremely high light output of 98 000+/-10 000 photons/MeV. LuI3:Ce3+ also gives a very high electron-hole (e-h) pair response when it is coupled with an avalanche photodiode (APD) (92 000+/-9000 e-h pairs/MeV). With an APD, a best energy resolution (full width at half maximum over the peak position) of 3.3%+/-0.3% for 662 keV γ quanta is observed. A combination of an extremely high light output and a good energy resolution makes LuI3:Ce3+ an ideal scintillator for radiation sensor applications. Some drawbacks due to the hygroscopicity and the difficult growth of LuI3:Ce3+ crystals are also discussed.

  12. Dislocations as a Noise Source in LWIR HgCdTe Photodiodes

    NASA Astrophysics Data System (ADS)

    Jóźwikowski, Krzysztof; Jóźwikowska, Alina; Martyniuk, Andrzej

    2016-10-01

    The effect of dislocation on the 1/ f noise current in long-wavelength infrared (LWIR) reverse biased HgCdTe photodiodes working at liquid nitrogen (LN) temperature was analyzed theoretically by using a phenomenological model of dislocations as an additional Shockley-Read-Hall (SRH) generation-recombination (G-R) channel in heterostructure. Numerical analysis was involved to solve the set of transport equations in order to find a steady state values of physical parameters of the heterostructure. Next, the set of transport equations for fluctuations (TEFF) was formulated and solved to obtain the spectral densities (SD) of the fluctuations of electrical potential, quasi-Fermi levels, and temperature. The SD of mobility fluctuations, shot G-R noise, and thermal noise were also taken into account in TEFF. Additional expressions for SD of 1/ f fluctuations of the G-R processes were derived. Numerical values of the SD of noise current were compared with the experimental results of Johnson et al. Theoretical analysis has shown that the dislocations increase the G-R processes and this way cause the growth of G-R dark current. Despite the fact that dislocations increase both shot G-R noise and 1/ f G-R noise, the main cause of 1/ f current noise in LN cooled LWIR photodiodes are fluctuations of the carriers mobility determined by 1/ f fluctuations of relaxation times. As the noise current is proportional to the total diode current, growth of G-R dark current caused by dislocations leads to the growth of noise current.

  13. Application of the hybrid approach to the benchmark dose of urinary cadmium as the reference level for renal effects in cadmium polluted and non-polluted areas in Japan

    SciTech Connect

    Suwazono, Yasushi; Nogawa, Kazuhiro; Uetani, Mirei; Nakada, Satoru; Kido, Teruhiko; Nakagawa, Hideaki

    2011-02-15

    Objectives: The aim of this study was to evaluate the reference level of urinary cadmium (Cd) that caused renal effects. An updated hybrid approach was used to estimate the benchmark doses (BMDs) and their 95% lower confidence limits (BMDL) in subjects with a wide range of exposure to Cd. Methods: The total number of subjects was 1509 (650 men and 859 women) in non-polluted areas and 3103 (1397 men and 1706 women) in the environmentally exposed Kakehashi river basin. We measured urinary cadmium (U-Cd) as a marker of long-term exposure, and {beta}2-microglobulin ({beta}2-MG) as a marker of renal effects. The BMD and BMDL that corresponded to an additional risk (BMR) of 5% were calculated with background risk at zero exposure set at 5%. Results: The U-Cd BMDL for {beta}2-MG was 3.5 {mu}g/g creatinine in men and 3.7 {mu}g/g creatinine in women. Conclusions: The BMDL values for a wide range of U-Cd were generally within the range of values measured in non-polluted areas in Japan. This indicated that the hybrid approach is a robust method for different ranges of cadmium exposure. The present results may contribute further to recent discussions on health risk assessment of Cd exposure.

  14. Hybrid photonic chip interferometer for embedded metrology

    NASA Astrophysics Data System (ADS)

    Kumar, P.; Martin, H.; Maxwell, G.; Jiang, X.

    2014-03-01

    Embedded metrology is the provision of metrology on the manufacturing platform, enabling measurement without the removal of the work piece. Providing closer integration of metrology upon the manufacturing platform can lead to the better control and increased throughput. In this work we present the development of a high precision hybrid optical chip interferometer metrology device. The complete metrology sensor system is structured into two parts; optical chip and optical probe. The hybrid optical chip interferometer is based on a silica-on-silicon etched integrated-optic motherboard containing waveguide structures and evanescent couplers. Upon the motherboard, electro-optic components such as photodiodes and a semiconductor gain block are mounted and bonded to provide the required functionality. The key structure in the device is a tunable laser module based upon an external-cavity diode laser (ECDL). Within the cavity is a multi-layer thin film filter which is rotated to select the longitudinal mode at which the laser operates. An optical probe, which uses a blazed diffracting grating and collimating objective lens, focuses light of different wavelengths laterally over the measurand. Incident laser light is then tuned in wavelength time to effectively sweep an `optical stylus' over the surface. Wavelength scanning and rapid phase shifting can then retrieve the path length change and thus the surface height. We give an overview of the overall design of the final hybrid photonic chip interferometer, constituent components, device integration and packaging as well as experimental test results from the current version now under evaluation.

  15. Cross-Species Hybridization with Fusarium verticillioides Microarrays Reveals New Insights into Fusarium fujikuroi Nitrogen Regulation and the Role of AreA and NMR

    Technology Transfer Automated Retrieval System (TEKTRAN)

    In filamentous fungi, the GATA-type transcription factor AreA plays a major role in transcriptional activation of genes needed to utilize poor nitrogen sources. Previously we have shown that in Fusarium fujikuroi AreA also controls genes involved in biosynthesis of nitrogen-free secondary metabolit...

  16. Stellarator hybrids

    SciTech Connect

    Furth, H.P.; Ludescher, C.

    1984-08-01

    The present paper briefly reviews the subject of tokamak-stellarator and pinch-stellarator hybrids, and points to two interesting new possibilities: compact-torus-stellarators and mirror-stellarators.

  17. Reliable solution processed planar perovskite hybrid solar cells with large-area uniformity by chloroform soaking and spin rinsing induced surface precipitation

    SciTech Connect

    Chern, Yann-Cherng; Wu, Hung-Ruei; Chen, Yen-Chu; Horng, Sheng-Fu; Zan, Hsiao-Wen; Meng, Hsin-Fei

    2015-08-15

    A solvent soaking and rinsing method, in which the solvent was allowed to soak all over the surface followed by a spinning for solvent draining, was found to produce perovskite layers with high uniformity on a centimeter scale and with much improved reliability. Besides the enhanced crystallinity and surface morphology due to the rinsing induced surface precipitation that constrains the grain growth underneath in the precursor films, large-area uniformity with film thickness determined exclusively by the rotational speed of rinsing spinning for solvent draining was observed. With chloroform as rinsing solvent, highly uniform and mirror-like perovskite layers of area as large as 8 cm × 8 cm were produced and highly uniform planar perovskite solar cells with power conversion efficiency of 10.6 ± 0.2% as well as much prolonged lifetime were obtained. The high uniformity and reliability observed with this solvent soaking and rinsing method were ascribed to the low viscosity of chloroform as well as its feasibility of mixing with the solvent used in the precursor solution. Moreover, since the surface precipitation forms before the solvent draining, this solvent soaking and rinsing method may be adapted to spinless process and be compatible with large-area and continuous production. With the large-area uniformity and reliability for the resultant perovskite layers, this chloroform soaking and rinsing approach may thus be promising for the mass production and commercialization of large-area perovskite solar cells.

  18. III-V strain layer superlattice based band engineered avalanche photodiodes (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Ghosh, Sid

    2015-08-01

    photodiodes and some of the recent results on the work being done at Raytheon on SWIR avalanche photodiodes.

  19. Dark-current characteristics of GaN-based UV avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Xu, Jintong; Chang, Chao; Li, Xiangyang

    2015-04-01

    For UV detecting, it needs high ratio of signal to noise, which means high responsibility and low noise. GaN-based avalanche photodiodes can provide a high internal photocurrent gain. In this paper, we report the testing and characterization of GaN based thin film materials, optimization design of device structure, the device etching and passivation technology, and the photoelectric characteristics of the devices. Also, uniformity of the device was obtained. The relationship between dark current and material quality or device processes was the focus of this study. GaN based material with high aluminum components have high density defects. Scanning electron microscope, cathodoluminescence spectra, X-ray double crystal diffraction and transmission spectroscopy testing were employed to evaluate the quality of GaN-based material. It shows that patterned sapphire substrate or thick AlN buffer layer is more effective to get high quality materials. GaN-based materials have larger hole ionization coefficient, so back incident structure were adopted to maximize the hole-derived multiplication course and it was helped to get a smaller multiplication noise. The device with separate absorption and multiplication regions is also prospective to reduce the avalanche noise. According to AlGaN based material characteristics and actual device fabrication, device structure was optimized further. Low physical damage inductively coupled plasma (ICP) etching method was used to etch mesa and wet etching method was employed to treat mesa damage. Silica is passivation material of device mesa. For solar-blind ultraviolet device, it is necessary to adopt a wider bandgap material than AlGaN material. The current-voltage characteristics under reverse bias were measured in darkness and under UV illumination. The distribution of dark current and response of different devices was obtained. In short, for GaN-based UV avalanche photodiode, dark current was related to high density dislocation of

  20. Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1-x)2O3

    NASA Astrophysics Data System (ADS)

    Zhang, Zhipeng; von Wenckstern, Holger; Lenzner, Jörg; Lorenz, Michael; Grundmann, Marius

    2016-03-01

    UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a Si-doped (InxGa1-x)2O3 thin film with a monotonic lateral variation of 0.0035 < x < 0.83. Such layer was deposited by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. The photo response signal is provided from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes fabricated from indium-rich part of the sample, for which an internal gain mechanism could be identified.

  1. Manufactures and Characterizations of Photodiode Thin Film Barium Strontium Titanate (BST) Doped by Niobium and Iron as Light Sensor

    NASA Astrophysics Data System (ADS)

    Dahrul, Muhammad; Syafutra, Heriyanto; Arif, Ardian; Irzaman, Indro; Nur, Muhammad; Siswadi

    2010-12-01

    Pure Ba0,5Sr0,5TiO3 (BST) thin film, BST doped by niobium (BNST) and BST doped by iron (BFST) have been synthesized on p-type Si (100) substrates using Chemical Solution Deposition (CSD) methods followed by spin coating and annealing techniques. Current-voltage characterizations on these sample result in agreement that all of the BST, BNST, and BFST thin films have photodiode properties. Electrical conductivity values of BST, BNST, and BFST are in the range of conductivity values of semiconductor materials. Niobium or iron doping on the BST samples increase their conductivity value their dielectric constant. This conductivity values may change when a light is exposed on the film surface. Absorbance and reflectance characterizations show that the BST, BNST, and BFST thin films absorb certain range of visible and infrared light. It is convincing that the BST, BNST, and BFST thin films might be used as photodiode light sensor.

  2. Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure

    NASA Astrophysics Data System (ADS)

    Zhang, Zhipeng; von Wenckstern, Holger; Lenzner, Jörg; Grundmann, Marius

    2016-06-01

    We report on ultraviolet photodiodes with integrated optical filter based on the wurtzite (Mg,Zn)O thin films. Tuning of the bandgap of filter and active layers was realized by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. Filter and active layers of the device were deposited on opposite sides of a sapphire substrate with nearly parallel compositional gradients. Ensure that for each sample position the bandgap of the filter layer blocking the high energy radiation is higher than that of the active layer. Different oxygen pressures during the two depositions runs. The absorption edge is tuned over 360 meV and the spectral bandwidth of photodiodes is typically 100 meV and as low as 50 meV.

  3. Plasmonic enhancements of photocatalytic activity of Pt/n-Si/Ag photodiodes using Au/Ag core/shell nanorods.

    PubMed

    Qu, Yongquan; Cheng, Rui; Su, Qiao; Duan, Xiangfeng

    2011-10-26

    We report the plasmonic enhancement of the photocatalytic properties of Pt/n-Si/Ag photodiode photocatalysts using Au/Ag core/shell nanorods. We show that Au/Ag core/shell nanorods can be synthesized with tunable plasmon resonance frequencies and then conjugated onto Pt/n-Si/Ag photodiodes using well-defined chemistry. Photocatalytic studies showed that the conjugation with Au/Ag core/shell nanorods can significantly enhance the photocatalytic activity by more than a factor of 3. Spectral dependence studies further revealed that the photocatalytic enhancement is strongly correlated with the plasmonic absorption spectra of the Au/Ag core/shell nanorods, unambiguously demonstrating the plasmonic enhancement effect.

  4. High performance CaS solar-blind ultraviolet photodiodes fabricated by seed-layer-assisted growth

    SciTech Connect

    He, Qing Lin; Lai, Ying Hoi; Sou, Iam Keong; Liu, Yi; Beltjens, Emeline; Qi, Jie

    2015-11-02

    CaS, with a direct bandgap of 5.38 eV, is expected to be a strong candidate as the active-layer of high performance solar-blind UV photodiodes that have important applications in both civilian and military sectors. Here, we report that a seed-layer-assisted growth approach via molecular beam epitaxy can result in high crystalline quality rocksalt CaS thin films on zincblende GaAs substrates. The Au/CaS/GaAs solar-blind photodiodes demonstrated , more than five orders in its visible rejection power, a photoresponse of 36.8 mA/w at zero bias and a corresponding quantum efficiency as high as 19% at 235 nm.

  5. Determination of the contribution of northern Africa dust source areas to PM10 concentrations over the central Iberian Peninsula using the Hybrid Single-Particle Lagrangian Integrated Trajectory model (HYSPLIT) model

    NASA Astrophysics Data System (ADS)

    Escudero, M.; Stein, A.; Draxler, R. R.; Querol, X.; Alastuey, A.; Castillo, S.; Avila, A.

    2006-03-01

    A source apportionment methodology has been implemented to estimate the contribution from different arid geographical areas to the levels of measured atmospheric particulate matter with diameters less than 10 μm (PM10). Toward that end, the Hybrid Single-Particle Lagrangian Integrated Trajectory model (HYSPLIT) has been used to quantify the proportions of mineral dust originated from specific geographical areas in northern Africa. HYSPLIT simulates the transport, dispersion, and deposition of dust plumes as they travel from the source areas to the receptors. This model has been configured to reproduce high daily ambient PM10 levels recorded at three Spanish EMEP (Cooperative Programme for Monitoring and Evaluation of the Long-Range Transmission of Air pollutants in Europe) regional background monitoring stations, located over the central Iberian Peninsula, during a North African dust outbreak from 12 to 15 March 2003. Different model setups have been utilized to determine the best suite of parameters needed to better represent the observed concentrations. Once the simulation has been configured, the model has been run for individual scenarios which include eight specific source areas over northern Africa considered as possible contributors to the PM10 levels measured at the monitoring stations. One additional run has been carried out to account for the rest of the dust sources in northern Africa. Furthermore, the fractional contribution to the PM10 air concentrations at the receptors from each run has been used to estimate the source apportionment. According to these calculations, the contribution from each area to the PM10 recorded over central Iberia for the March 2003 episode can be detailed as follows: 20-30% of the PM10 dust originated in Mauritania and the western Sahara, 15-20% from Mali, Mauritania and the western flanks of the Ahaggar Mountains, and 55-60% from other northwestern African sources within the rest of the desert source area.

  6. Mechanics of cadmium telluride-zinc telluride nucleation on (112) Si for mercury cadmium telluride infrared photo-diode arrays

    NASA Astrophysics Data System (ADS)

    Dhar, Nibir Kumar

    Epitaxy of CdTe/ZnTe on the extremely large lattice mismatched Si leads to high density of dislocations, multi-domain facets, rough surface morphology, and often Cd-terminated surface polarity. These problems, related to the mode of nucleation and growth, limit its application to manufacture improved HgCdTe based large area infrared focal plane arrays. Thermo-kinetics of ZnTe nucleation on "atomically" clean, and arsenic modified nominal and vicinal (112) Si surfaces were investigated in a molecular beam epitaxy system. Transition state theory was invoked to understand and model ZnTe nucleation processes. Thin ZnTe templates were fabricated by: (1) migration enhanced epitaxy (MEE), and (2) crystallized amorphous deposits for relaxed epitaxy (CADRE) procedure developed in this research. MBE CdTe/ZnTe/Si structures were characterized, and used to make improved HgCdTe detector arrays. MEE ZnTe nucleation produced small, but misoriented islands. Nucleation involved dissociative adsorption of Tesb2 into highly immobile chemisorbed atoms, with Si-Te covalent bond energy of 3.46 ± 0.1 eV. CdTe layers were heavily twinned, with high dislocation densities, and crystallographic facets; surface morphologies were rough, and exhibited temperature dependent polarity transformation. The CADRE process led to polycrystalline CdTe/ZnTe structures. MEE ZnTe growth on As-terminated Si surfaces was initially by Stranski-Krastanaw mode via chemisorption of tellurium atoms which produced (2sqrt{3} x 2sqrt{3})R30 reconstructed surfaces. The CADRE process did not involve island nucleation. CdTe layers deposited on ZnTe templates prepared by MEE and CADRE were Te-terminated, with extremely good morphologies. For nominal Si, twin concentrations were two orders of magnitude lower than in equivalent structures grown on "atomically" clean Si surfaces. Twin free CdTe layers with dislocation densities in the range of 1-5 × 10sp5 cmsp{-2} were obtained by the CADRE technique. A model is proposed

  7. High-Speed Widely-Tunable 90% Quantum-Efficiency Resonant Cavity Enhanced p-i-n Photodiodes

    DTIC Science & Technology

    1998-12-01

    REPORT unclassified b . ABSTRACT unclassified c. THIS PAGE unclassified Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std Z39-18 8:45am - 9...00am WB2 High-Speed Widely-Tunable >90% Quantum-Efficiency Resonant Cavity Enhanced p-i-n Photodiodes Necmi Biyiklia. Ibrahim Kimukinb. Orhan ...Bilkent, Ankara 06533, Turkey. b Department of Physics, Bilkent University, Bilkent, Ankara 06533, Turkey. c Department of Electrical and Computer

  8. A compact 64-pixel CsI(T1)/Si PIN photodiode imaging module with IC readout

    SciTech Connect

    Gruber, Gregory J.; Choong, Woon-Seng; Moses, William W.; Derenzo, Stephen E.; Holland, Stephen E.; Pedrali-Noy, Marzio; Krieger, Brad; Mandelli, Emanuele; Meddeler, Gerrit; Wang, Nadine W.

    2001-08-09

    We characterize the performance of a complete 64-pixel compact gamma camera imaging module consisting of optically isolated 3 mm 3 mm 5 mm CsI(Tl) crystals coupled to a custom array of low-noise Si PIN photodiodes read out by a custom IC. At 50 V bias the custom 64-pixel photodiode arrays demonstrate an average leakage current of 28 pA per 3 mm 3 mm pixel, a 98.5 percent yield of pixels with <100 pA leakage, and a quantum efficiency of about 80 percent for 540 nm CsI(Tl) scintillation photons. The custom 64-channel readout IC uses low-noise preamplifiers, shaper amplifiers, and a winner-take-all (WTA) multiplexer. The IC demonstrates maximum gain of 120 mV / 1000 e-, the ability to select the largest input signal in less than 150 ns, and low electronic noise at 8 ms peaking time ranging from 25 e- rms (unloaded) to an estimated 180 e- rms (photodiode load of 3 pF, 50 pA). At room temperature a complete 64-pixel detector module employing a custom photodiode array and readout IC demonstrates an average energy resolution of 23.4 percent fwhm and an intrinsic spatial resolution of 3.3 mm fwhm for the 140 keV emissions of 99mTc. Construction of an array of such imaging modules is straightforward, hence this technology shows strong potential for numerous compact gamma camera applications, including scintimammography.

  9. Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

    PubMed

    Pan, Huapu; Li, Zhi; Beling, Andreas; Campbell, Joe C

    2009-10-26

    The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model.

  10. High-optical-power handling InGaAs photodiodes and balanced receivers for high-spurious free dynamic range (SFDR) analog photonic links

    NASA Astrophysics Data System (ADS)

    Joshi, Abhay M.; Wang, Xinde; Mohr, Dan; Becker, Donald; Patil, Ravikiran

    2004-08-01

    We have developed 20 mA or higher photocurrent handling InGaAs photodiodes with 20 GHz bandwidth, and 10 mA or higher photocurrent handling InGaAs photodiodes with >40 GHz bandwidth. These photodiodes have been thoroughly tested for reliability including Bellcore GR 468 standard and are built to ISO 9001:2000 Quality Management System. These Dual-depletion InGaAs/InP photodiodes are surface illuminated and yet handle such large photocurrent due to advanced band-gap engineering. They have broad wavelength coverage from 800 nm to 1700 nm, and thus can be used at several wavelengths such as 850 nm, 1064 nm, 1310 nm, 1550 nm, and 1620 nm. Furthermore, they exhibit very low Polarization Dependence Loss of 0.05dB typical to 0.1dB maximum. Using above high current handling photodiodes, we have developed classical Push-Pull pair balanced photoreceivers for the 2 to 18 GHz EW system. These balanced photoreceivers boost the Spurious Free Dynamic Range (SFDR) by almost 3 dB by eliminating the laser RIN noise. Future research calls for designing an Avalanche Photodiode Balanced Pair to boost the SFDR even further by additional 3 dB. These devices are a key enabling technology in meeting the SFDR requirements for several DoD systems.

  11. In0.53Ga0.47As p-i-n photodiodes with transparent cadmium tin oxide contacts

    NASA Astrophysics Data System (ADS)

    Berger, Paul R.; Dutta, Niloy K.; Zydzik, George; O'Bryan, H. M.; Keller, Ursula; Smith, Peter R.; Lopata, John; Sivco, D.; Cho, A. Y.

    1992-10-01

    A new type of p-i-n In0.53Ga0.47As photodiode having an optically transparent composite top electrode consisting of a thin semitransparent metal layer and a transparent cadmium tin oxide (CTO) layer was investigated. The composite functions as the n or p contact, an optical window, and an antireflection coating. The transparent contact also prevents shadowing of the active layer by the top electrode, thus allowing greater collection of incident light. Since the CTO contact is nonalloyed, interdiffusion into the i-region is not relevant avoiding an increased dark current. The photodiodes exhibited leakage currents of ≤8 nA and some as low as 23 pA, with reverse breakdown voltages of ≥15-17 V. Responsivity was measured using a 1.55 μm InGaAsP diode laser focused onto an unpassivated 60 μm diam p-i-n photodiode and was ≥0.41 A/W. Photoresponse of the diodes to 3 ps pulses from a Nd:YLF laser (λ=1.047 μm) was 169 and 86 ps for the 60 and 9 μm diodes, respectively. The maximum frequency response of the 9 μm diode is packaging limited, and is expected to have an intrinsic response time of 20-30 ps.

  12. Microspot-based ELISA in microfluidics: chemiluminescence and colorimetry detection using integrated thin-film hydrogenated amorphous silicon photodiodes.

    PubMed

    Novo, Pedro; Prazeres, Duarte Miguel França; Chu, Virginia; Conde, João Pedro

    2011-12-07

    Microfluidic technology has the potential to decrease the time of analysis and the quantity of sample and reactants required in immunoassays, together with the potential of achieving high sensitivity, multiplexing, and portability. A lab-on-a-chip system was developed and optimized using optical and fluorescence microscopy. Primary antibodies are adsorbed onto the walls of a PDMS-based microchannel via microspotting. This probe antibody is then recognised using secondary FITC or HRP labelled antibodies responsible for providing fluorescence or chemiluminescent and colorimetric signals, respectively. The system incorporated a micron-sized thin-film hydrogenated amorphous silicon photodiode microfabricated on a glass substrate. The primary antibody spots in the PDMS-based microfluidic were precisely aligned with the photodiodes for the direct detection of the antibody-antigen molecular recognition reactions using chemiluminescence and colorimetry. The immunoassay takes ~30 min from assay to the integrated detection. The conditions for probe antibody microspotting and for the flow-through ELISA analysis in the microfluidic format with integrated detection were defined using antibody solutions with concentrations in the nM-μM range. Sequential colorimetric or chemiluminescence detection of specific antibody-antigen molecular recognition was quantitatively detected using the photodiode. Primary antibody surface densities down to 0.182 pmol cm(-2) were detected. Multiplex detection using different microspotted primary antibodies was demonstrated.

  13. P-InAsSbP/n-InAs single heterostructure back-side illuminated 8 × 8 photodiode array

    NASA Astrophysics Data System (ADS)

    Brunkov, P. N.; Il'inskaya, N. D.; Karandashev, S. A.; Lavrov, A. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.; Usikova, A. A.

    2016-09-01

    P-InAsSbP/n-InAs/n+-InAs single heterostructure photodiode monolithic array with linear impurity distribution in the space charge region and "bulk" n-InAs absorbing layer has been fabricated by the LPE method and studied for the first time. Unlike all known InAsSbP/InAs PDs with an abrupt p-n junction the linear impurity distribution PDs potentially suggest lower compared with analogs capacitance and tunneling current. Indeed the developed photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8 × 10-6 A/cm2, Ubias = -0.5 V, 164 K) and background limited infrared photodetector (BLIP) regime starting from 190 K (2π field of view, D3.1μm ∗ = 1.1 × 1012 cm Hz1/2/W) have been demonstrated. High photodiode performance is thought to be due to above peculiarities of the impurity distribution as well as low defect density in P-InAsSbP/n-InAs/n+-InAs single heterostructure.

  14. A quantum efficiency analytical model for complementary metal—oxide—semiconductor image pixels with a pinned photodiode structure

    NASA Astrophysics Data System (ADS)

    Cao, Chen; Zhang, Bing; Wu, Long-Sheng; Li, Na; Wang, Jun-Feng

    2014-12-01

    A quantum efficiency analytical model for complementary metal—oxide—semiconductor (CMOS) image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160 × 160 pixels array, which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.

  15. Hybrid artificial intelligence approach based on neural fuzzy inference model and metaheuristic optimization for flood susceptibilitgy modeling in a high-frequency tropical cyclone area using GIS

    NASA Astrophysics Data System (ADS)

    Tien Bui, Dieu; Pradhan, Biswajeet; Nampak, Haleh; Bui, Quang-Thanh; Tran, Quynh-An; Nguyen, Quoc-Phi

    2016-09-01

    This paper proposes a new artificial intelligence approach based on neural fuzzy inference system and metaheuristic optimization for flood susceptibility modeling, namely MONF. In the new approach, the neural fuzzy inference system was used to create an initial flood susceptibility model and then the model was optimized using two metaheuristic algorithms, Evolutionary Genetic and Particle Swarm Optimization. A high-frequency tropical cyclone area of the Tuong Duong district in Central Vietnam was used as a case study. First, a GIS database for the study area was constructed. The database that includes 76 historical flood inundated areas and ten flood influencing factors was used to develop and validate the proposed model. Root Mean Square Error (RMSE), Mean Absolute Error (MAE), Receiver Operating Characteristic (ROC) curve, and area under the ROC curve (AUC) were used to assess the model performance and its prediction capability. Experimental results showed that the proposed model has high performance on both the training (RMSE = 0.306, MAE = 0.094, AUC = 0.962) and validation dataset (RMSE = 0.362, MAE = 0.130, AUC = 0.911). The usability of the proposed model was evaluated by comparing with those obtained from state-of-the art benchmark soft computing techniques such as J48 Decision Tree, Random Forest, Multi-layer Perceptron Neural Network, Support Vector Machine, and Adaptive Neuro Fuzzy Inference System. The results show that the proposed MONF model outperforms the above benchmark models; we conclude that the MONF model is a new alternative tool that should be used in flood susceptibility mapping. The result in this study is useful for planners and decision makers for sustainable management of flood-prone areas.

  16. High-speed Imaging and Wavefront Sensing with an Infrared Avalanche Photodiode Array

    NASA Astrophysics Data System (ADS)

    Baranec, Christoph; Atkinson, Dani; Riddle, Reed; Hall, Donald; Jacobson, Shane; Law, Nicholas M.; Chun, Mark

    2015-08-01

    Infrared avalanche photodiode (APD) arrays represent a panacea for many branches of astronomy by enabling extremely low-noise, high-speed, and even photon-counting measurements at near-infrared wavelengths. We recently demonstrated the use of an early engineering-grade infrared APD array that achieves a correlated double sampling read noise of 0.73 e- in the lab, and a total noise of 2.52 e- on sky, and supports simultaneous high-speed imaging and tip-tilt wavefront sensing with the Robo-AO visible-light laser adaptive optics (AO) system at the Palomar Observatory 1.5 m telescope. Here we report on the improved image quality simultaneously achieved at visible and infrared wavelengths by using the array as part of an image stabilization control loop with AO-sharpened guide stars. We also discuss a newly enabled survey of nearby late M-dwarf multiplicity, as well as future uses of this technology in other AO and high-contrast imaging applications.

  17. Research on photodiode detector-based spatial transient light detection and processing system

    NASA Astrophysics Data System (ADS)

    Liu, Meiying; Wang, Hu; Liu, Yang; Zhao, Hui; Nan, Meng

    2016-10-01

    In order to realize real-time signal identification and processing of spatial transient light, the features and the energy of the captured target light signal are first described and quantitatively calculated. Considering that the transient light signal has random occurrence, a short duration and an evident beginning and ending, a photodiode detector based spatial transient light detection and processing system is proposed and designed in this paper. This system has a large field of view and is used to realize non-imaging energy detection of random, transient and weak point target under complex background of spatial environment. Weak signal extraction under strong background is difficult. In this paper, considering that the background signal changes slowly and the target signal changes quickly, filter is adopted for signal's background subtraction. A variable speed sampling is realized by the way of sampling data points with a gradually increased interval. The two dilemmas that real-time processing of large amount of data and power consumption required by the large amount of data needed to be stored are solved. The test results with self-made simulative signal demonstrate the effectiveness of the design scheme. The practical system could be operated reliably. The detection and processing of the target signal under the strong sunlight background was realized. The results indicate that the system can realize real-time detection of target signal's characteristic waveform and monitor the system working parameters. The prototype design could be used in a variety of engineering applications.

  18. Performance Analysis of OCDMA Based on AND Detection in FTTH Access Network Using PIN & APD Photodiodes

    NASA Astrophysics Data System (ADS)

    Aldouri, Muthana; Aljunid, S. A.; Ahmad, R. Badlishah; Fadhil, Hilal A.

    2011-06-01

    In order to comprise between PIN photo detector and avalanche photodiodes in a system used double weight (DW) code to be a performance of the optical spectrum CDMA in FTTH network with point-to-multi-point (P2MP) application. The performance of PIN against APD is compared through simulation by using opt system software version 7. In this paper we used two networks designed as follows one used PIN photo detector and the second using APD photo diode, both two system using with and without erbium doped fiber amplifier (EDFA). It is found that APD photo diode in this system is better than PIN photo detector for all simulation results. The conversion used a Mach-Zehnder interferometer (MZI) wavelength converter. Also we are study, the proposing a detection scheme known as AND subtraction detection technique implemented with fiber Bragg Grating (FBG) act as encoder and decoder. This FBG is used to encode and decode the spectral amplitude coding namely double weight (DW) code in Optical Code Division Multiple Access (OCDMA). The performances are characterized through bit error rate (BER) and bit rate (BR) also the received power at various bit rate.

  19. Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires

    PubMed Central

    2016-01-01

    A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p–n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm2 detector patch was tested between 4 Hz and 2 kHz. The −3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications. PMID:27615556

  20. High-speed detection at two micrometres with monolithic silicon photodiodes

    NASA Astrophysics Data System (ADS)

    Ackert, Jason J.; Thomson, David J.; Shen, Li; Peacock, Anna C.; Jessop, Paul E.; Reed, Graham T.; Mashanovich, Goran Z.; Knights, Andrew P.

    2015-06-01

    With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’. A promising solution is to open new spectral regions at wavelengths near 2 μm and to exploit the long-wavelength transmission and amplification capabilities of hollow-core photonic-bandgap fibres and the recently available thulium-doped fibre amplifiers. To date, photodetector devices for this window have largely relied on III-V materials or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility. Here, we describe a silicon photodiode operating at 20 Gbit s-1 in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

  1. HIGH-SPEED IMAGING AND WAVEFRONT SENSING WITH AN INFRARED AVALANCHE PHOTODIODE ARRAY

    SciTech Connect

    Baranec, Christoph; Atkinson, Dani; Hall, Donald; Jacobson, Shane; Chun, Mark; Riddle, Reed; Law, Nicholas M.

    2015-08-10

    Infrared avalanche photodiode (APD) arrays represent a panacea for many branches of astronomy by enabling extremely low-noise, high-speed, and even photon-counting measurements at near-infrared wavelengths. We recently demonstrated the use of an early engineering-grade infrared APD array that achieves a correlated double sampling read noise of 0.73 e{sup −} in the lab, and a total noise of 2.52 e{sup −} on sky, and supports simultaneous high-speed imaging and tip-tilt wavefront sensing with the Robo-AO visible-light laser adaptive optics (AO) system at the Palomar Observatory 1.5 m telescope. Here we report on the improved image quality simultaneously achieved at visible and infrared wavelengths by using the array as part of an image stabilization control loop with AO-sharpened guide stars. We also discuss a newly enabled survey of nearby late M-dwarf multiplicity, as well as future uses of this technology in other AO and high-contrast imaging applications.

  2. Slot clock recovery in optical PPM communication systems with avalanche photodiode photodetectors

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic M.; Sun, Xiaoli

    1989-01-01

    Slot timing recovery in a direct-detection optical PPM communication system can be achieved by processing the photodetector output waveform with a nonlinear device whose output forms the input to a phase-locked loop. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (wavelength = 834 nm) and a silicon avalanche photodiode photodetector. The system used Q = 4 PPM signaling and operated at a source data rate of 25 Mbits/s. The mathematical model developed to compute the rms phase error of the recovered clock is shown to be in good agreement with results of actual measurements of phase errors. The use of the recovered slot clock in the receiver resulted in no significant degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the -6th at a received optical signal energy of 55 detected photons per information bit.

  3. Coordinated observations of optical lightning from space using the FORTE photodiode detector and CCD imager

    NASA Astrophysics Data System (ADS)

    Suszcynsky, D. M.; Light, T. E.; Davis, S.; Green, J. L.; Guillen, J. L. L.; Myre, W.

    2001-08-01

    This paper presents an overview of the coordinated observation of optical lightning from space using the photodiode detector (PDD) and CCD-based imager known as the Lightning Location System (LLS) aboard the Fast On-Orbit Recording of Transient Events (FORTE) satellite. PDD/LLS coincidence statistics are presented and show that both the detected energy density and the detected peak irradiance of optical lightning events are proportional to the number of LLS pixels (pixel multiplicity) which are activated during the event. The inference is that LLS pixel multiplicity is more a function of the detected intensity and horizontal extent of the optical event rather than a direct indicator of the degree of scattering. PDD/LLS event coincidence is also used to improve upon traditional recurrence/clustering algorithms that discriminate against false LLS events due to energetic particles and glint. Energy density measurements of coincident events show that about 4% of the optical energy detected by the broadband PDD appears in the narrowband LLS. This is in general agreement with ground-based measurements and with assumptions incorporated into the design of current and planned CCD-imaging sensors.

  4. Triple transit region photodiodes (TTR-PDs) providing high millimeter wave output power.

    PubMed

    Rymanov, Vitaly; Stöhr, Andreas; Dülme, Sebastian; Tekin, Tolga

    2014-04-07

    We report on a novel triple transit region (TTR) layer structure for 1.55 μm waveguide photodiodes (PDs) providing high output power in the millimeter wave (mmW) regime. Basically, the TTR-PD layer structure consists of three transit layers, in which electrons drift at saturation velocity or even at overshoot velocity. Sufficiently strong electric fields (>3000 V/cm) are achieved in all three transit layers even in the undepleted absorber layer and even at very high optical input power levels. This is achieved by incorporating three 10 nm thick p-doped electric field clamp layers. Numerical simulations using the drift-diffusion model (DDM) indicate that for optical intensities up to ~500 kW/cm(2), no saturation effects occur, i.e. the electric field exceeds the critical electric field in all three transit layers. This fact in conjunction with a high-frequency double-mushroom cross-section of the waveguide TTR-PD ensures high output power levels at mmW frequencies. Fabricated 1.55 µm InGaAs(P)/InP waveguide TTR-PDs exhibit output power levels exceeding 0 dBm (1 mW) and a return loss (RL) up to ~24 dB. Broadband operation with a 3 dB bandwidth beyond 110 GHz is achieved.

  5. Radiation tolerance of a Geiger-mode avalanche photodiode imaging array

    NASA Astrophysics Data System (ADS)

    Kolb, Kimberly E.; Figer, Donald F.; Lee, Joong; Hanold, Brandon J.

    2016-07-01

    Radiation testing results for a Geiger-mode avalanche photodiode (GM-APD) array-based imager are reviewed. Radiation testing is a crucial step in technology development that assesses the readiness of a specific device or instrument for space-based missions or other missions in high-radiation environments. Pre- and postradiation values for breakdown voltage, dark count rate (DCR), after pulsing probability, photon detection efficiency (PDE), crosstalk probability, and intrapixel sensitivity are presented. Details of the radiation testing setup and experiment are provided. The devices were exposed to a total dose of 50 krad(Si) at the Massachusetts General Hospital's Francis H. Burr Proton Therapy Center, using monoenergetic 60 MeV protons as the radiation source. This radiation dose is equivalent to radiation absorbed over 10 solar cycles at an L2 orbit with 1-cm aluminum shielding. The DCR increased by 2.3 e-/s/pix/krad(Si) at 160 K, the afterpulsing probability increased at all temperatures and settings by a factor of ˜2, and the effective breakdown voltage shifted by +1.5 V. PDE, crosstalk probability, and intrapixel sensitivity were unchanged by radiation damage. The performance of the GM-APD imaging array is compared to the performance of the CCD on board the ASCA satellite with a similar radiation shield and radiation environment.

  6. Fast single photon avalanche photodiode-based time-resolved diffuse optical tomography scanner

    PubMed Central

    Mu, Ying; Niedre, Mark

    2015-01-01

    Resolution in diffuse optical tomography (DOT) is a persistent problem and is primarily limited by high degree of light scatter in biological tissue. We showed previously that the reduction in photon scatter between a source and detector pair at early time points following a laser pulse in time-resolved DOT is highly dependent on the temporal response of the instrument. To this end, we developed a new single-photon avalanche photodiode (SPAD) based time-resolved DOT scanner. This instrument uses an array of fast SPADs, a femto-second Titanium Sapphire laser and single photon counting electronics. In combination, the overall instrument temporal impulse response function width was 59 ps. In this paper, we report the design of this instrument and validate its operation in symmetrical and irregularly shaped optical phantoms of approximately small animal size. We were able to accurately reconstruct the size and position of up to 4 absorbing inclusions, with increasing image quality at earlier time windows. We attribute these results primarily to the rapid response time of our instrument. These data illustrate the potential utility of fast SPAD detectors in time-resolved DOT. PMID:26417526

  7. Radiation tolerant compact image sensor using CdTe photodiode and field emitter array (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Masuzawa, Tomoaki; Neo, Yoichiro; Mimura, Hidenori; Okamoto, Tamotsu; Nagao, Masayoshi; Akiyoshi, Masafumi; Sato, Nobuhiro; Takagi, Ikuji; Tsuji, Hiroshi; Gotoh, Yasuhito

    2016-10-01

    A growing demand on incident detection is recognized since the Great East Japan Earthquake and successive accidents in Fukushima nuclear power plant in 2011. Radiation tolerant image sensors are powerful tools to collect crucial information at initial stages of such incidents. However, semiconductor based image sensors such as CMOS and CCD have limited tolerance to radiation exposure. Image sensors used in nuclear facilities are conventional vacuum tubes using thermal cathodes, which have large size and high power consumption. In this study, we propose a compact image sensor composed of a CdTe-based photodiode and a matrix-driven Spindt-type electron beam source called field emitter array (FEA). A basic principle of FEA-based image sensors is similar to conventional Vidicon type camera tubes, but its electron source is replaced from a thermal cathode to FEA. The use of a field emitter as an electron source should enable significant size reduction while maintaining high radiation tolerance. Current researches on radiation tolerant FEAs and development of CdTe based photoconductive films will be presented.

  8. Photodiode Based on CdO Thin Films as Electron Transport Layer

    NASA Astrophysics Data System (ADS)

    Soylu, M.; Kader, H. S.

    2016-11-01

    Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

  9. Noise characteristic of AlGaN-based solar-blind UV avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Chang, C.; Xu, J. T.; Li, X. Y.

    2015-04-01

    A particular system for excess noise of avalanche photodiode (APD) measurement was build. Then the signal-noise ratio at different reverse voltage and the noise spectrum are measured and analyzed on different devices. First, the noise measurement system was constructed to fulfill the requirement that a high DC voltage can be applied on, and the measurement system was carefully shielded to protect from disturbance of electromagnetic radiations. Than we measured the noise spectrums of separate absorption and multiplication (SAM) type solar-blind APDs. The noise spectrums of SAM APDs which have different dark current levels were also measured. The results show that the low-frequency noise is dominant across a wide frequency range. And as the dark current goes higher, shot noise and low-frequency noise go higher at the same time. And the low-frequency noise will also takes more proportion in the spectrum when dark current goes higher. On the other hand, noise measurements at different reverse voltage and in either UV illumination or dark show that the excess noise factor increase faster as the gain increase. This leads to a decrease of signal-noise ratio at very high gain. In order to get a higher signal-noise ratio, a proper high gain should be adopted, rather than a gain "higher and better".

  10. Nanosecond response of organic solar cells and photodiodes: Role of trap states

    NASA Astrophysics Data System (ADS)

    Christ, Nico; Kettlitz, Siegfried W.; Züfle, Simon; Valouch, Sebastian; Lemmer, Uli

    2011-05-01

    The nanosecond photoresponse of organic solar cells and photodiodes based on a conjugated polymer [poly(3-hexylthiophene-2,5-diyl) (P3HT)] blended with a fullerene derivative [[6,6]-phenyl C61-butyric acid methyl ester (PCBM)] is found to exhibit a tail in the decay characteristics which is proportional to t-α. Existing numerical drift-diffusion simulations, not including the influence of trap states in the organic materials, fail to describe the observed long tail of the current density decay up to the microsecond timescale. We have extended a numerical drift-diffusion model to account for dispersive transport phenomena. In addition to a Gaussian density of the transport states, the distribution includes an exponential tail of states acting as trap sites for the generated charge carriers. The observed decay of the photoresponse following a power law is excellently reproduced within a multiple-trapping approach taking into account nine trap states approximating the exponential tail. The mobility of carriers in the transport states is found to be three times higher than the average effective mobility.

  11. Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

    NASA Technical Reports Server (NTRS)

    Huntington, Andrew

    2013-01-01

    The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

  12. Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

    NASA Technical Reports Server (NTRS)

    Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

    2014-01-01

    The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

  13. Numerical Examination of Silicon Avalanche Photodiodes Operated in Charge Storage Mode

    NASA Technical Reports Server (NTRS)

    Parks, Joseph W., Jr.; Brennan, Kevin F.

    1998-01-01

    The behavior of silicon-based avalanche photodiodes (APD's) operated in the charge storage mode is examined. In the charge storage mode, the diodes are periodically biased to a sub-breakdown voltage and then open-circuited. During this integration period, photo-excited and thermally generated carriers are accumulated within the structure. The dynamics of this accumulation and its effects upon the avalanching of the diode warrants a detailed, fully numerical analysis. The salient features of this investigation include device sensitivity to the input photo-current including the self-quenching effect of the diode and its limitations in sensing low light levels, the dependence of the response on the bulk lifetime and hence on the generation current within the device, the initial gain, transient response, dependence of the device uniformity upon performance, and the quantity of storable charge within the device. To achieve these tasks our device simulator, STEBS-2D, was utilized. A modified current-controlled boundary condition is employed which allows for the simulation of the isolated diode after the initial reset bias has been applied. With this boundary condition, it is possible to establish a steady-state voltage on the ohmic contact and then effectively remove the device from the external circuit while still including effects from surface recombination, trapped surface charge, and leakage current from the read-out electronics.

  14. Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires.

    PubMed

    Zhang, Hezhi; Dai, Xing; Guan, Nan; Messanvi, Agnes; Neplokh, Vladimir; Piazza, Valerio; Vallo, Martin; Bougerol, Catherine; Julien, François H; Babichev, Andrey; Cavassilas, Nicolas; Bescond, Marc; Michelini, Fabienne; Foldyna, Martin; Gautier, Eric; Durand, Christophe; Eymery, Joël; Tchernycheva, Maria

    2016-10-05

    A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p-n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm(2) detector patch was tested between 4 Hz and 2 kHz. The -3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications.

  15. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

    PubMed Central

    Farrell, Alan C.; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M.; Huffaker, Diana L.

    2015-01-01

    Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III–V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure. PMID:26627932

  16. Sounding rocket measurement of the absolute solar EUV flux utilizing a silicon photodiode

    SciTech Connect

    Ogawa, H.S.; McMullin, D.; Judge, D.L. ); Canfield, L.R. )

    1990-04-01

    A newly developed stable and high quantum efficiency silicon photodiode was used to obtain an accurate measurement of the integrated absolute magnitude of the solar extreme ultraviolet photon flux in the spectral region between 50 and 800 {angstrom}. The detector was flown aboard a solar point sounding rocket launched from White Sands Missile Range in New Mexico on October 24, 1988. The adjusted daily 10.7-cm solar radio flux and sunspot number were 168.4 and 121, respectively. The unattenuated absolute value of the solar EUV flux at 1 AU in the specified wavelength region was 6.81 {times} 10{sup 10} photons cm{sup {minus}2} s{sup {minus}1}. Based on a nominal probable error of 7% for National Institute of Standards and Technology detector efficiency measurements in the 50- to 500-{angstrom} region (5% on longer wavelength measurements between 500 and 1216 {angstrom}), and based on experimental errors associated with their rocket instrumentation and analysis, a conservative total error estimate of {approximately}14% is assigned to the absolute integral solar flux obtained.

  17. A 16-channel avalanche photodiode detector array for visible and near-infrared flow cytometry

    NASA Astrophysics Data System (ADS)

    Lawrence, William G.; Stapels, Christopher; Farrell, Richard; Tario, Joseph D., Jr.; Podniesinski, Edward; Wallace, Paul K.; Christian, James F.

    2006-02-01

    We report on the development and application of a flow cytometer using a 16-channel avalanche photodiode (APD) linear detector array. The array is configured with a dispersive grating to simultaneously record emission over a broad wavelength range using the 16 APD channels of the linear APD array. The APD detector elements have a peak quantum efficiency of 80% near 900 nm and have at least 40% quantum efficiency over the 400-nm to 1000-nm wavelength range. The extended red sensitivity of the detector array facilitates the use of lower energy excitation sources and near IR emitting dyes which reduces the impact of autofluorescence in signal starved measurements. The wide wavelength sensitivity of the APD array permits the use of multiple excitation sources and many different fluorescent labels to maximize the number of independent parameters in a given experiment. We show the sensitivity and linearity measurements for a single APD detector. Initial results for the flow cytometer with the 16-element APD array and the 16-channel readout ASIC (application specific integrated circuit) are presented.

  18. Antimonide-based Geiger-mode avalanche photodiodes for SWIR and MWIR photon counting

    NASA Astrophysics Data System (ADS)

    Duerr, Erik K.; Manfra, Michael J.; Diagne, Mohamed A.; Bailey, Robert J.; Zayhowski, John J.; Donnelly, Joseph P.; Connors, Michael K.; Grzesik, Michael J.; Turner, George W.

    2010-04-01

    At MIT Lincoln Laboratory, avalanche photodiodes (APDs) have been developed for both 2-μm and 3.4-μm detection using the antimonide material system. These bulk, lattice-matched detectors operate in Geiger mode at temperatures up to 160 K. The 2-μm APDs use a separate-absorber-multiplier design with an InGaAsSb absorber and electron-initiated avalanching in the multiplier. These APDs have exhibited normalized avalanche probability (product of avalanche probability and photo-carrier-injection probability) of 0.4 and dark count rates of ~150 kHz at 77 K for a 30-μm-diameter device. A 1000- element imaging array of the 2-μm detectors has been demonstrated, which operate in a 5 kg dewar with an integrated Stirling-cycle cooler. The APD array is interfaced with a CMOS readout circuit, which provides photon time-of-arrival information for each pixel, allowing the focal plane array to be used in a photon-counting laser radar system. The 3.4-μm APDs use an InAsSb absorber and hole-initiated avalanching and have shown dark count rates of ~500 kHz at 77 K but normalized avalanche probability of < 1%. Research is ongoing to determine the cause of the low avalanche probability and improve the device performance.

  19. Initial characterization of a BGO-photodiode detector for high resolution positron emission tomography

    SciTech Connect

    Derenzo, S.E.

    1983-11-01

    Spatial resolution in positron emission tomography is currently limited by the resolution of the detectors. This work presents the initial characterization of a detector design using small bismuth germanate (BGO) crystals individually coupled to silicon photodiodes (SPDs) for crystal identification, and coupled in groups to phototubes (PMTs) for coincidence timing. A 3 mm x 3 mm x 3 mm BGO crystal coupled only to an SPD can achieve a 511 keV photopeak resolution of 8.7% FWHM at -150/sup 0/C, using a pulse peaking time of 10 ..mu..s. When two 3 mm x 3 mm x 15 mm BGO crystals are coupled individually to SPDs and also coupled to a common 14 mm diam PMT, the SPDs detect the 511 keV photopeak with a resolution of 30% FWHM at -76/sup 0/C. In coincidence with an opposing 3 mm wide BGO crystal, the SPDs are able to identify the crystal of interaction with good signal-to-noise ratio, and the detector pair resolution is 2 mm FWHM. 32 references, 7 figures, 3 tables.

  20. Analysis of ependymal ciliary beat pattern and beat frequency using high speed imaging: comparison with the photomultiplier and photodiode methods

    PubMed Central

    2012-01-01

    Background The aim of this study was to compare beat frequency measurements of ependymal cilia made by digital high speed imaging to those obtained using the photomultiplier and modified photodiode techniques. Using high speed video analysis the relationship of the power and recover strokes was also determined. Methods Ciliated strips of ependyma attached to slices from the brain of Wistar rats were incubated at 30°C and observed using a ×50 water immersion lens. Ciliary beat frequency was measured using each of the three techniques: the high speed video, photodiode and photomultiplier. Readings were repeated after 30 minutes incubation at 37°C. Ependymal cilia were observed in slow motion and the precise movement of cilia during the recovery stroke relative to the path travelled during the power stroke was measured. Results The mean (95% confidence intervals) beat frequencies determined by the high speed video, photomultiplier and photodiode at 30°C were 27.7 (26.6 to 28.8), 25.5 (24.4 to 26.6) and 20.8 (20.4 to 21.3) Hz, respectively. The mean (95% confidence intervals) beat frequencies determined by the high speed video, photomultiplier and photodiode at 37°C were 36.4 (34 to 39.5), 38.4 (36.8 to 39.9) and 18.8 (16.9 to 20.5) Hz. The inter and intra observer reliability for measurement of ciliary beat frequency was 3.8% and 1%, respectively. Ependymal cilia were observed to move in a planar fashion during the power and recovery strokes with a maximum deviation to the right of the midline of 12.1(11.8 to 13.0)° during the power stroke and 12.6(11.6 to 13.6)° to the left of the midline during the recovery stroke. Conclusion The photodiode technique greatly underestimates ciliary beat frequency and should not be used to measure ependymal ciliary beat frequency at the temperatures studied. Ciliary beat frequency from the high speed video and photomultiplier techniques cannot be used interchangeably. Ependymal cilia had minimal deviation to the right side

  1. Smart hybrid rotary damper

    NASA Astrophysics Data System (ADS)

    Yang, C. S. Walter; DesRoches, Reginald

    2014-03-01

    This paper develops a smart hybrid rotary damper using a re-centering smart shape memory alloy (SMA) material as well as conventional energy-dissipating metallic plates that are easy to be replaced. The ends of the SMA and steel plates are inserted in the hinge. When the damper rotates, all the plates bend, providing energy dissipating and recentering characteristics. Such smart hybrid rotary dampers can be installed in structures to mitigate structural responses and to re-center automatically. The damaged energy-dissipating plates can be easily replaced promptly after an external excitation, reducing repair time and costs. An OpenSEES model of a smart hybrid rotary was established and calibrated to reproduce the realistic behavior measured from a full-scale experimental test. Furthermore, the seismic performance of a 3-story moment resisting model building with smart hybrid rotary dampers designed for downtown Los Angeles was also evaluated in the OpenSEES structural analysis software. Such a smart moment resisting frame exhibits perfect residual roof displacement, 0.006", extremely smaller than 18.04" for the conventional moment resisting frame subjected to a 2500 year return period ground motion for the downtown LA area (an amplified factor of 1.15 on Kobe earthquake). The smart hybrid rotary dampers are also applied into an eccentric braced steel frame, which combines a moment frame system and a bracing system. The results illustrate that adding smart hybrid rotaries in this braced system not only completely restores the building after an external excitation, but also significantly reduces peak interstory drifts.

  2. Fingerprint analysis of Hibiscus mutabilis L. leaves based on ultra performance liquid chromatography with photodiode array detector combined with similarity analysis and hierarchical clustering analysis methods

    PubMed Central

    Liang, Xianrui; Ma, Meiling; Su, Weike

    2013-01-01

    Background: A method for chemical fingerprint analysis of Hibiscus mutabilis L. leaves was developed based on ultra performance liquid chromatography with photodiode array detector (UPLC-PAD) combined with similarity analysis (SA) and hierarchical clustering analysis (HCA). Materials and Methods: 10 batches of Hibiscus mutabilis L. leaves samples were collected from different regions of China. UPLC-PAD was employed to collect chemical fingerprints of Hibiscus mutabilis L. leaves. Results: The relative standard deviations (RSDs) of the relative retention times (RRT) and relative peak areas (RPA) of 10 characteristic peaks (one of them was identified as rutin) in precision, repeatability and stability test were less than 3%, and the method of fingerprint analysis was validated to be suitable for the Hibiscus mutabilis L. leaves. Conclusions: The chromatographic fingerprints showed abundant diversity of chemical constituents qualitatively in the 10 batches of Hibiscus mutabilis L. leaves samples from different locations by similarity analysis on basis of calculating the correlation coefficients between each two fingerprints. Moreover, the HCA method clustered the samples into four classes, and the HCA dendrogram showed the close or distant relations among the 10 samples, which was consistent to the SA result to some extent. PMID:23930008

  3. Hybrid Solar GHP Simulator

    SciTech Connect

    Yavuzturk, Cy; Chiasson, Andrew; Shonder, John

    2012-12-11

    This project provides an easy-to-use, menu-driven, software tool for designing hybrid solar-geothermal heat pump systems (GHP) for both heating- and cooling-dominated buildings. No such design tool currently exists. In heating-dominated buildings, the design approach takes advantage of glazed solar collectors to effectively balance the annual thermal loads on the ground with renewable solar energy. In cooling-dominated climates, the design approach takes advantage of relatively low-cost, unglazed solar collectors as the heat rejecting component. The primary benefit of hybrid GHPs is the reduced initial cost of the ground heat exchanger (GHX). Furthermore, solar thermal collectors can be used to balance the ground loads over the annual cycle, thus making the GHX fully sustainable; in heating-dominated buildings, the hybrid energy source (i.e., solar) is renewable, in contrast to a typical fossil fuel boiler or electric resistance as the hybrid component; in cooling-dominated buildings, use of unglazed solar collectors as a heat rejecter allows for passive heat rejection, in contrast to a cooling tower that consumes a significant amount of energy to operate, and hybrid GHPs can expand the market by allowing reduced GHX footprint in both heating- and cooling-dominated climates. The design tool allows for the straight-forward design of innovative GHP systems that currently pose a significant design challenge. The project lays the foundations for proper and reliable design of hybrid GHP systems, overcoming a series of difficult and cumbersome steps without the use of a system simulation approach, and without an automated optimization scheme. As new technologies and design concepts emerge, sophisticated design tools and methodologies must accompany them and be made usable for practitioners. Lack of reliable design tools results in reluctance of practitioners to implement more complex systems. A menu-driven software tool for the design of hybrid solar GHP systems is

  4. A general purpose characterization system for rooftop hybrid microconcentrators

    NASA Astrophysics Data System (ADS)

    Middleton, Robert; Jones, Christopher; Thomsen, Elizabeth; Diez, Vicente Munoz; Harvey, J.; Everett, Vernie; Blakers, Andrew

    2014-09-01

    A versatile characterization system for hybrid thermal and photovoltaic solar receivers is presented and demonstrated. The characterization of the thermal loss and effective area of a novel hybrid receiver is presented.

  5. Linear terrestrial laser scanning using array avalanche photodiodes as detectors for rapid three-dimensional imaging.

    PubMed

    Cai, Yinqiao; Tong, Xiaohua; Tong, Peng; Bu, Hongyi; Shu, Rong

    2010-12-01

    As an active remote sensor technology, the terrestrial laser scanner is widely used for direct generation of a three-dimensional (3D) image of an object in the fields of geodesy, surveying, and photogrammetry. In this article, a new laser scanner using array avalanche photodiodes, as designed by the Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, is introduced for rapid collection of 3D data. The system structure of the new laser scanner is first presented, and a mathematical model is further derived to transform the original data to the 3D coordinates of the object in a user-defined coordinate system. The performance of the new laser scanner is tested through a comprehensive experiment. The result shows that the new laser scanner can scan a scene with a field view of 30° × 30° in 0.2 s and that, with respect to the point clouds obtained on the wall and ground floor surfaces, the root mean square errors for fitting the two planes are 0.21 and 0.01 cm, respectively. The primary advantages of the developed laser scanner include: (i) with a line scanning mode, the new scanner achieves simultaneously the 3D coordinates of 24 points per single laser pulse, which enables it to scan faster than traditional scanners with a point scanning mode and (ii) the new scanner makes use of two galvanometric mirrors to deflect the laser beam in both the horizontal and the vertical directions. This capability makes the instrument smaller and lighter, which is more acceptable for users.

  6. The formation of GaAs/Si photodiodes by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Ullrich, Bruno; Erlacher, Artur; Jaeger, Herbert

    2004-07-01

    Hetero-pairing of thin-film GaAs on Si is of considerable interest for novel applications in optoelectronics. However, the formation of high-quality GaAs is difficult and requires expensive top technologies such as molecular beam epitaxy (MBE) and related methods. In general, MBE forms high-quality epitaxial layers but is not capable of the straightforward formation of GaAs on Si because of the 4.1% lattice mismatch between both materials. We have developed and explored the possibilities of pulsed-laser deposition (PLD) for the formation of GaAs films on (100) n-type Si substrates. The films have been produced in vacuum (10-6 torr) employing the fundamental (1064 nm), second (532 nm), and third (355 nm) harmonic emission of a Nd:YAG laser with a repetition rate of 10 Hz and a pulse duration of 6 ns. The laser was focused on (100) p-type (1019 cm-3) GaAs wafers with an energy fluence of 0.79-0.84 J/cm2. During the deposition, the substrate was not heated. The current-voltage characteristic of the samples showed rectification, i.e., the doping of the GaAs target was successfully maintained in the PLD film and a diode was formed in conjunction with the oppositely doped Si substrate. The observation of photocurrent without bias is an additional proof that an operating junction was achieved. The crystallographic quality of the films was checked by x-ray analysis and revealed that the films show [111]-oriented crystalline parts. The realization of GaAs/Si photodiodes reveals the potential of PLD to be used for the monolithic integration of GaAs photonic devices with Si circuits.

  7. Epitaxially-grown germanium/silicon avalanche photodiodes for near infrared light detection

    NASA Astrophysics Data System (ADS)

    Kang, Yimin; Liu, Han-Din; Morse, Mike; Paniccia, Mario J.; Zadka, Moshe; Litski, Stas; Sarid, Gadi; Pauchard, Alexandre; Kuo, Ying-Hao; Chen, Hui-Wen; Sfar Zaoui, Wissem; Bowers, John E.; Beling, Andreas; McIntosh, Dion C.; Zheng, Xiaoguang; Campbell, Joe C.

    2009-05-01

    Avalanche Photodiodes (APDs) are widely used in fiber-optic communications as well as imaging and sensing applications where high sensitivities are needed. Traditional InP-based APD receivers typically offer a 10 dB improvement in sensitivity up to 10 Gb/s when compared to standard p-i-n based detector counterparts. As the data rates increase, however, a limited gain-bandwidth product (~100GHz) results in degraded receiver sensitivity. An increasing amount of research is now focusing on alternative multiplication materials for APDs to overcome this limitation, and one of the most promising is silicon. The difficulty in realizing a silicon-based APD device at near infrared wavelengths is that a compatible absorbing material is difficult to find. Research on germanium-on-silicon p-i-n detectors has shown acceptable responsivity at wavelengths as long as 1550 nm, and this work extends the approach to the more complicated APD structure. We are reporting here a germanium-on-silicon Separate Absorption Charge and Multiplication (SACM) APD which operates at 1310 nm, with a responsivity of 0.55A/W at unity gain with long dark current densities. The measured gain bandwidth product of this device is much higher than that of a typical III-V APD. Other device performances, like reliability, sensitivity and thermal stability, will also be discussed in this talk. This basic demonstration of a new silicon photonic device is an important step towards practical APD devices operating at 40 Gb/s, as well as for new applications which require low cost, high volume receivers with high sensitivity such as imaging and sensing.

  8. Paper like cellulose-ZnO hybrid nanocomposite and its photoelectrical behavior

    NASA Astrophysics Data System (ADS)

    Mun, Seongchoel; Ko, Hyun-U.; Kang, Byung-Woo; Kim, Jaehwan

    2014-04-01

    Paper based composite with semiconductor nanomaterial is a fascinating orgnic-inorganic hybrid composite that has improved properties of flexibility, biocompatibility and functionality. Cellulose Electro-Active Paper (EAPap) is a kind of paper electric device. To improve functionality of EAPap, ZnO is used as hybrid inorganic composition. Cellulose- ZnO hybrid nanocomposite (CEZOHN) is fabricated by seeding and growing ZnO on cellulose film with a simple chemical reaction. CEZOHN reveals not only electrical, eletromechanical behavior but also photoelectrical behavior. This paper reports specially photo-response and sensitivity of CEZOHN under several light source: UV light, sun and fluorescent light. The fabrication process is briefly introduced, and induced voltage, induced current under light source are investigated. Also, the ZnO effect of CEZOHN and its mechanism is studied and its possibility of application as photosensor, photodiode, photovoltaic device will be discussed.

  9. Characterization of Large Area APDs for the EXO-200 Detector

    SciTech Connect

    Neilson, R.; LePort, F.; Pocar, A.; Kumar, K.; Odian, A.; Prescott, C.Y.; Tenev, V.; Ackerman, N.; Akimov, D.; Auger, M.; Benitez-Medina, C.; Breidenbach, M.; Burenkov, A.; Conley, R.; Cook, S.; deVoe, R.; Dolinski, M.J.; Fairbank, W., Jr.; Farine, J.; Fierlinger, P.; Flatt, B.; /Stanford U., Phys. Dept. /Bern U., LHEP /Stanford U., Phys. Dept. /Maryland U. /Colorado State U. /Laurentian U. /Carleton U. /SLAC /Maryland U. /Moscow, ITEP /Alabama U. /SLAC /Colorado State U. /Stanford U., Phys. Dept. /Alabama U. /Stanford U., Phys. Dept. /Alabama U. /SLAC /Carleton U. /SLAC /Maryland U. /Moscow, ITEP /Carleton U. /Stanford U., Phys. Dept. /Bern U., LHEP /SLAC /Laurentian U. /SLAC /Maryland U.

    2011-12-02

    EXO-200 uses 468 large area avalanche photodiodes (LAAPDs) for detection of scintillation light in an ultra-low-background liquid xenon (LXe) detector. We describe initial measurements of dark noise, gain and response to xenon scintillation light of LAAPDs at temperatures from room temperature to 169 K - the temperature of liquid xenon. We also describe the individual characterization of more than 800 LAAPDs for selective installation in the EXO-200 detector.

  10. Reduction of the dark current in a P3HT-based organic photodiode with a ytterbium-fluoride buffer layer for electron transport

    NASA Astrophysics Data System (ADS)

    Lim, Seong Bin; Ji, Chan Hyuk; Kim, Kee Tae; Oh, Se Young

    2016-08-01

    Photodiodes are widely used to convert light into electrical signals. The conventional silicon (Si) based photodiodes boast high photoelectric conversion efficiency and detectivity. However, in general, inorganic-based photodiodes have low sensitivity at visible wavelengths due to their absorption of infrared wavelengths. Recently, electrical conducting polymer-based photodiodes have received significant attention due to their flexibility, low cost of production and high sensitivity at visible wavelength ranges. In the present work, we fabricated an organic photodiode (OPD) with a consisting of ITO/ NiO x / P3HT:PC60BM/ YbF3/Al structure. In the OPD, a yitterbium fluoride (YbF3) buffer layer was used as the electron transport layer. The OPD was analyzed by using optical-electrical measurements to determine its J-V, detectivity, and dynamic characteristics. We investigated the physical effects of the YbF3 buffer layer on the performance of OPD such as its carrier extraction, leakage current and ohmic characteristics.

  11. Contribution of the n-side to the R 0A product of long wavelength n+n-pHg1- xCdxTe photodiodes in the diffusion controlled regime

    NASA Astrophysics Data System (ADS)

    Gonzalez, C.; Centeno, J. M.; Sangrador, J.

    The contribution of the n-side to the total differential resistance by area product in the dark (R 0A) of longwavelength n+n-p photodiodes made in Hg 1- xCd xTe (MCT) is analyzed in the diffusion controlled regime based on a model of an abrupt junction. The results of the modeling indicate that the p-side contribution determines an upper limit to R 0A whose actual value is decreased by the n-side contribution. In many practical diodes, the n-side contribution is negligible, but it can be important under some particular conditions that can occur, as is discussed in this study.

  12. Evaluation of a fast single-photon avalanche photodiode for measurement of early transmitted photons through diffusive media.

    PubMed

    Mu, Ying; Valim, Niksa; Niedre, Mark

    2013-06-15

    We tested the performance of a fast single-photon avalanche photodiode (SPAD) in measurement of early transmitted photons through diffusive media. In combination with a femtosecond titanium:sapphire laser, the overall instrument temporal response time was 59 ps. Using two experimental models, we showed that the SPAD allowed measurement of photon-density sensitivity functions that were approximately 65% narrower than the ungated continuous wave case at very early times. This exceeds the performance that we have previously achieved with photomultiplier-tube-based systems and approaches the theoretical maximum predicted by time-resolved Monte Carlo simulations.

  13. Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron

    NASA Technical Reports Server (NTRS)

    Ackley, D. E.; Hladky, J.; Lange, M. J.; Mason, S.; Erickson, G.; Olsen, G. H.; Ban, V. S.; Forrest, S. R.; Staller, C.

    1990-01-01

    Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.

  14. Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes

    NASA Astrophysics Data System (ADS)

    Brunkov, P. N.; Il'inskaya, N. D.; Karandashev, S. A.; Lavrov, A. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.; Usikova, A. A.

    2014-05-01

    Double heterostructure (DH) photodiodes (PDs) with InAs active layer and back-side illumination have been studied in the 100-300 K temperature range. Temperature dependence of a spectral response was standard for InAs based PDs while saturation current (or zero bias resistance) was characterized by a single value of the activation energy with domination of a diffusion current at most temperatures. As a result the simulated detectivity value was beyond the known numbers for homo- and heterojunction InAs PDs.

  15. Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode

    NASA Technical Reports Server (NTRS)

    Laird, Jamie S.; Onoda, Shinobu; Hirao, Toshio; Becker, Heidi; Johnston, Allan; Laird, Jamie S.; Itoh, Hisayoshi

    2006-01-01

    Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.

  16. Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

    PubMed

    Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji

    2012-04-09

    On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

  17. Nonlinearity and image persistence of P-20 phosphor-based intensified photodiode array detectors used in CARS spectroscopy.

    PubMed

    Snelling, D R; Smallwood, G J; Sawchuk, R A

    1989-08-01

    Several self-scanning photodiode arrays (IPDA) used for CARS spectroscopy are shown to exhibit a greater image persistence than has generally been realized, and to exhibit a falloff in sensitivity that is logarithmic with decreasing output signal. These effects are attributed to the P-20 phosphor based intensifiers used in the IPDAs and are probably generic to all such detectors. A strategy for minimizing the image persistence in CARS spectroscopy is presented. A prototype detector incorporating a much faster rare earth phosphor is evaluated and shown to be more suited to single pulse CARS measurements in turbulent combustion than the IPDAs incorporating P-20 phosphors.

  18. Design of Low Power CMOS Read-Out with TDI Function for Infrared Linear Photodiode Array Detectors

    NASA Technical Reports Server (NTRS)

    Vizcaino, Paul; Ramirez-Angulo, Jaime; Patel, Umesh D.

    2007-01-01

    A new low voltage CMOS infrared readout circuit using the buffer-direct injection method is presented. It uses a single supply voltage of 1.8 volts and a bias current of 1uA. The time-delay integration technique is used to increase the signal to noise ratio. A current memory circuit with faulty diode detection is used to remove dark current for background compensation and to disable a photodiode in a cell if detected as faulty. Simulations are shown that verify the circuit that is currently in fabrication in 0.5ym CMOS technology.

  19. Development of a (Hg, Cd)Te photodiode detector, Phase 2. [for 10.6 micron spectral region

    NASA Technical Reports Server (NTRS)

    1972-01-01

    High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

  20. Betabox: a beta particle imaging system based on a position sensitive avalanche photodiode

    PubMed Central

    Dooraghi, AA; Vu, NT; Silverman, RW; Farrell, R; Shah, KS; Wang, J; Heath, JR; Chatziioannou, AF

    2013-01-01

    A beta camera has been developed that allows planar imaging of the spatial and temporal distribution of beta particles using a 14 × 14 mm2 position sensitive avalanche photodiode (PSAPD). This camera system, which we call Betabox, can be directly coupled to microfluidic chips designed for cell incubation or other biological applications. Betabox allows for imaging the cellular uptake of molecular imaging probes labeled with charged particle emitters such as 18F inside these chips. In this work, we investigate the quantitative imaging capabilities of Betabox for 18F beta particles, in terms of background rate, efficiency, spatial resolution, and count rate. Measurements of background and spatial resolution are considered both at room temperature (21 °C ± 1 °C) and at an elevated operating temperature (37 °C ± 1 °C), as is often required for biological assays. The background rate measured with a 4 keV energy cutoff is below 2 cph mm−2 at both 21 and 37 °C. The absolute efficiency of Betabox for the detection of 18F positron sources in contact with a PSAPD with the surface passivated from ambient light and damage is 46% ± 1%. The lower detection limit is estimated using the Rose Criterion to be 0.2 cps mm−2 for 1 min acquisitions and a 62 × 62 µm2 pixel size. The upper detection limit is approximately 21 000 cps. The spatial resolution at both 21 and 37 °C ranges from 0.4 mm FWHM at the center of the field of view (FOV), and degrades to 1 mm at a distance of 5 mm away from center yielding a useful FOV of approximately 10 × 10 mm2. We also investigate the effects on spatial resolution and sensitivity that result from the use of a polymer based microfluidic chip. For these studies we place varying layers of low-density polyethylene (LDPE) between the detector and the source and find that the spatial resolution degrades by ~180 µm for every 100 µm of LDPE film. Sensitivity is reduced by half with the inclusion of ~200 µm of additional LDPE film

  1. Lutetium oxyorthosilicate block detector readout by avalanche photodiode arrays for high resolution animal PET.

    PubMed

    Pichler, B J; Swann, B K; Rochelle, J; Nutt, R E; Cherry, S R; Siegel, S B

    2004-09-21

    Avalanche photodiodes (APDs) have proven to be useful as light detectors for high resolution positron emission tomography (PET). Their compactness makes these devices excellent candidates for replacing bulky photomultiplier tubes (PMTs) in PET systems where space limitations are an issue. The readout of densely packed, 10 x 10 lutetium oxyorthosilicate (LSO) block detectors (crystal size 2.0 x 2.0 x 12 mm3) with custom-built monolithic 3 x 3 APD arrays was investigated. The APDs had a 5 x 5 mm2 active surface and were arranged on a 6.25 mm pitch. The dead space on the edges of the array was 1.25 mm. The APDs were operated at a bias voltage of approximately 380 V for a gain of 100 and a dark current of 10 nA per APD. The standard deviation in gain between the APDs in the array ranged from 1.8 to 6.5% as the gain was varied from 50 to 108. A fast, low-noise, multi-channel charge sensitive preamplifier application-specific integrated circuit (ASIC) was developed for the APD readout. The amplifier had a rise time of 8 ns, a noise floor of 515 e- rms and a 9 e- pF(-1) noise slope. An acquired flood image showed that all 100 crystals from the block detector could be resolved. Timing measurements with single-channel LSO-APD detectors, as well as with the array, against a plastic scintillator and PMT assembly showed a time resolution of 1.2 ns and 2.5 ns, respectively. The energy resolution measured with a single 4.0 x 4.0 x 10 mm3 LSO crystal, wrapped in four-layer polytetrafluoroethylene (PTFE) tape and coupled with optical grease on a single APD of the array, yielded 15% (full width at half maximum, FWHM) at 511 keV. Stability tests over 9 months of operation showed that the APD arrays do not degrade appreciably. These results demonstrate the ability to decode densely packed LSO scintillation blocks with compact APD arrays. The good timing and energy resolution makes these detectors suitable for high resolution PET.

  2. Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

    NASA Astrophysics Data System (ADS)

    Senaratne, C. L.; Wallace, P. M.; Gallagher, J. D.; Sims, P. E.; Kouvetakis, J.; Menéndez, J.

    2016-07-01

    Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%-16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1-ySny/p-Ge1-zSnz type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architectures incorporating Ge1-xSnx intermediate layers (x ˜ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge1-x-ySixSny alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account

  3. Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

    SciTech Connect

    Zhang, Dongyuan; Uchida, Kazuo; Nozaki, Shinji

    2015-09-07

    A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 10{sup 16 }cm{sup −3}, and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C{sup −2}–V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO{sub 2} formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO{sub 2} interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO{sub 2} interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 °C was found

  4. Photodiode-Based X-Ray Beam-Position Monitor With High Spatial-Resolution for the NSLS-II Beamlines

    SciTech Connect

    Yoon, P.S.; Siddons, D. P.

    2009-05-25

    We developed a photodiode-based monochromatic X-ray beam-position monitor (X-BPM) with high spatial resolution for the project beamlines of the NSLS-II. A ring array of 32 Si PIN-junction photodiodes were designed for use as a position sensor, and a low-noise HERMES4 ASIC chip was integrated into the electronic readout system. A series of precision measurements to characterize electrically the Si-photodiode sensor and the ASIC chip demonstrated that the inherent noise is sufficiently below tolerance levels. Following up modeling of detector's performance, including geometrical optimization using a Gaussian beam, we fabricated and assembled a first prototype. In this paper, we describe the development of this new state-of-the-art X-ray BPM along the beamline, in particular, downstream from the monochromator.

  5. Alternative Spectral Photoresponse in a p-Cu2ZnSnS4/n-GaN Heterojunction Photodiode by Modulating Applied Voltage.

    PubMed

    Yang, Gang; Li, Yong-Feng; Yao, Bin; Ding, Zhan-Hui; Deng, Rui; Fang, Xuan; Wei, Zhi-Peng

    2015-08-05

    We report alternative visible and ultraviolet light response spectra in a p-Cu2ZnSnS4 (p-CZTS)/n-GaN heterojunction photodiode. A CZTS film was deposited on an n-GaN/sapphire substrate using a magnetron sputtering method. Current-voltage characteristic of the p-CZTS/n-GaN heterojunction photodiode showed a good rectifying behavior. The spectral response measurements indicate that the response wavelength of the photodiode can be tuned from ultraviolet to visible regions via applying zero and reverse bias. A band alignment at the interface of the p-CZTS/n-GaN heterojunction was proposed to interpret the spectral response of the device.

  6. Autocorrelation measurement of femtosecond laser pulses based on two-photon absorption in GaP photodiode

    SciTech Connect

    Chong, E. Z.; Watson, T. F.; Festy, F.

    2014-08-11

    Semiconductor materials which exhibit two-photon absorption characteristic within a spectral region of interest can be useful in building an ultra-compact interferometric autocorrelator. In this paper, we report on the evidence of a nonlinear absorption process in GaP photodiodes which was exploited to measure the temporal profile of femtosecond Ti:sapphire laser pulses with a tunable peak wavelength above 680 nm. The two-photon mediated conductivity measurements were performed at an average laser power of less than a few tenths of milliwatts. Its suitability as a single detector in a broadband autocorrelator setup was assessed by investigating the nonlinear spectral sensitivity bandwidth of a GaP photodiode. The highly favourable nonlinear response was found to cover the entire tuning range of our Ti:sapphire laser and can potentially be extended to wavelengths below 680 nm. We also demonstrated the flexibility of GaP in determining the optimum compensation value of the group delay dispersion required to restore the positively chirped pulses inherent in our experimental optical system to the shortest pulse width possible. With the rise in the popularity of nonlinear microscopy, the broad two-photon response of GaP and the simplicity of this technique can provide an alternative way of measuring the excitation laser pulse duration at the focal point of any microscopy systems.

  7. A new approach to investigate leakage current mechanisms in infrared photodiodes from illuminated current-voltage characteristics

    SciTech Connect

    Gopal, Vishnu

    2014-08-28

    This paper presents a new approach to investigate leakage current mechanisms in infrared photodiodes from the illuminated current–voltage characteristics. The example of mid-wave mercury cadmium telluride photodiodes is presented to illustrate the new approach. The new method is suitable for evaluating diodes in an array environment as advance knowledge of any of the material or device parameters are not required. The thermal saturation current is estimated from the observed open circuit voltage and zero-bias current (photo-current) of the diode. The ohmic shunt resistance is estimated from the observed maximum dynamic impedance of the diode. The experimentally observed reverse bias diode current in excess of thermal current, photo-current, and ohmic shunt current is reported to be best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. Our investigations reveal a close link between the excess current and the sources of ohmic currents in the diode. Exponential growth of excess current with the applied bias voltage has been interpreted as an indication of soft breakdown of the diodes.

  8. High-resolution mapping of the energy conversion efficiency of solar cells and silicon photodiodes in photovoltaic mode

    NASA Astrophysics Data System (ADS)

    Cemine, Vernon Julius; Sarmiento, Raymund; Blanca, Carlo Mar

    2008-11-01

    We demonstrate an optical technique to derive the two-dimensional energy conversion efficiency ( ηCE), fill factor (FF) and external quantum efficiency ( ηQE) distributions across the surface of photovoltaic devices. A compact, inexpensive optical-feedback laser diode microscope is constructed to acquire the confocal reflectance and efficiency maps enabling the observation of the local parametric behavior in silicon photodiodes in photovoltaic mode and single-junction solar cells. The ηCE and ηQE distributions are greatly influenced by local parasitic resistances that depend on laser irradiance. These parasitic resistances decrease the ηCE and ηQE values with distance from the contact electrode at high laser irradiance. The optical technique enables microscopic comparison of ηCE and ηQE within the pn-overlay region of the photodiode sample, revealing its optimization for photodetection rather than power generation. The technique also elucidates the decreasing local ηCE of the solar cell under intense irradiation.

  9. Influence of the metallic contact in extreme-ultraviolet and soft x-ray diamond based Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Ciancaglioni, I.; Di Venanzio, C.; Marinelli, Marco; Milani, E.; Prestopino, G.; Verona, C.; Verona-Rinati, G.; Angelone, M.; Pillon, M.; Tartoni, N.

    2011-09-01

    X-ray and UV photovoltaic Schottky photodiodes based on single crystal diamond were recently developed at Rome "Tor Vergata" University laboratories. In this work, different rectifying metallic contact materials were thermally evaporated on the oxidized surface of intrinsic single crystal diamond grown by chemical vapor deposition. Their impact on the detection performance in the extreme UV and soft x-ray spectral regions was studied. The electrical characterization of the metal/diamond Schottky junctions was performed at room temperature by measuring the capacitance-voltage characteristics. The diamond photodiodes were then tested both over the extreme UV spectral region from 10 to 60 eV by using He-Ne DC gas discharge as a radiation source and toroidal vacuum monochromator, and in the soft x-ray range from 6 to 20 keV at the Diamond Light Source synchrotron x-ray beam-line in Harwell (UK). In both experimental setups, time response and spectral responsivity were analyzed for all the investigated Schottky contact materials. A good agreement between the experimental data and theoretical results from Monte Carlo simulations is found

  10. Autocorrelation measurement of femtosecond laser pulses based on two-photon absorption in GaP photodiode

    NASA Astrophysics Data System (ADS)

    Chong, E. Z.; Watson, T. F.; Festy, F.

    2014-08-01

    Semiconductor materials which exhibit two-photon absorption characteristic within a spectral region of interest can be useful in building an ultra-compact interferometric autocorrelator. In this paper, we report on the evidence of a nonlinear absorption process in GaP photodiodes which was exploited to measure the temporal profile of femtosecond Ti:sapphire laser pulses with a tunable peak wavelength above 680 nm. The two-photon mediated conductivity measurements were performed at an average laser power of less than a few tenths of milliwatts. Its suitability as a single detector in a broadband autocorrelator setup was assessed by investigating the nonlinear spectral sensitivity bandwidth of a GaP photodiode. The highly favourable nonlinear response was found to cover the entire tuning range of our Ti:sapphire laser and can potentially be extended to wavelengths below 680 nm. We also demonstrated the flexibility of GaP in determining the optimum compensation value of the group delay dispersion required to restore the positively chirped pulses inherent in our experimental optical system to the shortest pulse width possible. With the rise in the popularity of nonlinear microscopy, the broad two-photon response of GaP and the simplicity of this technique can provide an alternative way of measuring the excitation laser pulse duration at the focal point of any microscopy systems.

  11. A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging

    SciTech Connect

    Gruber, Gregory J.

    2000-01-01

    Recent clinical evaluations of scintimammography (radionuclide breast imaging) are promising and suggest that this modality may prove a valuable complement to X-ray mammography and traditional breast cancer detection and diagnosis techniques. Scintimammography, however, typically has difficulty revealing tumors that are less than 1 cm in diameter, are located in the medial part of the breast, or are located in the axillary nodes. These shortcomings may in part be due to the use of large, conventional Anger cameras not optimized for breast imaging. In this thesis I present compact single photon camera technology designed specifically for scintimammography which strives to alleviate some of these limitations by allowing better and closer access to sites of possible breast tumors. Specific applications are outlined. The design is modular, thus a camera of the desired size and geometry can be constructed from an array (or arrays) of individual modules and a parallel hole lead collimator for directional information. Each module consists of: (1) an array of 64 discrete, optically-isolated CsI(Tl) scintillator crystals 3 x 3 x 5 mm3 in size, (2) an array of 64 low-noise Si PIN photodiodes matched 1-to-1 to the scintillator crystals, (3) an application-specific integrated circuit (ASIC) that amplifies the 64 photodiode signals and selects the signal with the largest amplitude, and (4) connectors and hardware for interfacing the module with a motherboard, thereby allowing straightforward computer control of all individual modules within a camera.

  12. Electrical and photoresponse properties of vacuum deposited Si/Al:ZnSe and Bi:ZnTe/Al:ZnSe photodiodes

    NASA Astrophysics Data System (ADS)

    Rao, Gowrish K.

    2017-04-01

    The paper reports fabrication and characterization of Bi:ZnTe/Al:ZnSe and Si/Al:ZnSe thin film photodiodes. The characteristics of the devices were studied under dark and illuminated conditions. The normalized spectral response, speed of photoresponse and variation of photocurrent with power density were studied in detail. Many vital parameters, such as diode ideality factor, barrier height, the thickness of the depletion region, trap depth, rise and decay times of photocurrent, were determined. Conduction mechanism in the photodiodes is discussed with the help of widely accepted theoretical models.

  13. Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes

    NASA Astrophysics Data System (ADS)

    Brunkov, P. N.; Il'inskaya, N. D.; Karandashev, S. A.; Karpukhina, N. G.; Lavrov, A. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.; Usikova, A. A.

    2016-05-01

    P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure photodiodes with linear impurity distribution in the space charge region have been fabricated and studied. The photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8·10-6 A/cm2, Vbias = -0.5 V, 164 K) and background limited infrared photodetector (BLIP) regime starting from 150 K (2π field of view, D3.1μm ∗ = 1.4·1012 cm Hz1/2/W) have been demonstrated.

  14. Hybrid Gear

    NASA Technical Reports Server (NTRS)

    Handschuh, Robert F. (Inventor); Roberts, Gary D. (Inventor)

    2016-01-01

    A hybrid gear consisting of metallic outer rim with gear teeth and metallic hub in combination with a composite lay up between the shaft interface (hub) and gear tooth rim is described. The composite lay-up lightens the gear member while having similar torque carrying capability and it attenuates the impact loading driven noise/vibration that is typical in gear systems. The gear has the same operational capability with respect to shaft speed, torque, and temperature as an all-metallic gear as used in aerospace gear design.

  15. Hybrid Propulsion Technology Program

    NASA Technical Reports Server (NTRS)

    Jensen, G. E.; Holzman, A. L.

    1990-01-01

    Future launch systems of the United States will require improvements in booster safety, reliability, and cost. In order to increase payload capabilities, performance improvements are also desirable. The hybrid rocket motor (HRM) offers the potential for improvements in all of these areas. The designs are presented for two sizes of hybrid boosters, a large 4.57 m (180 in.) diameter booster duplicating the Advanced Solid Rocket Motor (ASRM) vacuum thrust-time profile and smaller 2.44 m (96 in.), one-quater thrust level booster. The large booster would be used in tandem, while eight small boosters would be used to achieve the same total thrust. These preliminary designs were generated as part of the NASA Hybrid Propulsion Technology Program. This program is the first phase of an eventual three-phaes program culminating in the demonstration of a large subscale engine. The initial trade and sizing studies resulted in preferred motor diameters, operating pressures, nozzle geometry, and fuel grain systems for both the large and small boosters. The data were then used for specific performance predictions in terms of payload and the definition and selection of the requirements for the major components: the oxidizer feed system, nozzle, and thrust vector system. All of the parametric studies were performed using realistic fuel regression models based upon specific experimental data.

  16. Printed hybrid systems

    NASA Astrophysics Data System (ADS)

    Karioja, Pentti; Mäkinen, Jukka-Tapani; Keränen, Kimmo; Aikio, Janne; Alajoki, Teemu; Jaakola, Tuomo; Koponen, Matti; Keränen, Antti; Heikkinen, Mikko; Tuomikoski, Markus; Suhonen, Riikka; Hakalahti, Leena; Kopola, Pälvi; Hast, Jukka; Liedert, Ralf; Hiltunen, Jussi; Masuda, Noriyuki; Kemppainen, Antti; Rönkä, Kari; Korhonen, Raimo

    2012-04-01

    This paper presents research activities carried out at VTT Technical Research Centre of Finland in the field of hybrid integration of optics, electronics and mechanics. Main focus area in our research is the manufacturing of electronic modules and product structures with printed electronics, film-over-molding and polymer sheet lamination technologies and the goal is in the next generation of smart systems utilizing monolithic polymer packages. The combination of manufacturing technologies such as roll-to-roll -printing, injection molding and traditional component assembly is called Printed Hybrid Systems (PHS). Several demonstrator structures have been made, which show the potential of polymer packaging technology. One demonstrator example is a laminated structure with embedded LED chips. Element thickness is only 0.3mm and the flexible stack of foils can be bent in two directions after assembly process and was shaped curved using heat and pressure. The combination of printed flexible circuit boards and injection molding has also been demonstrated with several functional modules. The demonstrators illustrate the potential of origami electronics, which can be cut and folded to 3D shapes. It shows that several manufacturing process steps can be eliminated by Printed Hybrid Systems technology. The main benefits of this combination are small size, ruggedness and conformality. The devices are ideally suited for medical applications as the sensitive electronic components are well protected inside the plastic and the structures can be cleaned easily due to the fact that they have no joints or seams that can accumulate dirt or bacteria.

  17. Hybrid Simulator

    SciTech Connect

    Trujillo, David J.; Sridharan, Srikesh; Weinstock, Irvin

    2005-10-15

    HybSim (short for Hybrid Simulator) is a flexible, easy to use screening tool that allows the user to quanti the technical and economic benefits of installing a village hybrid generating system and simulates systems with any combination of —Diesel generator sets —Photovoltaic arrays -Wind Turbines and -Battery energy storage systems Most village systems (or small population sites such as villages, remote military bases, small communities, independent or isolated buildings or centers) depend on diesel generation systems for their source of energy. HybSim allows the user to determine other "sources" of energy that can greatly reduce the dollar to kilo-watt hour ratio. Supported by the DOE, Energy Storage Program, HybSim was initially developed to help analyze the benefits of energy storage systems in Alaskan villages. Soon after its development, other sources of energy were added providing the user with a greater range of analysis opportunities and providing the village with potentially added savings. In addition to village systems, HybSim has generated interest for use from military institutions in energy provisions and USAID for international village analysis.

  18. Hybridization in a warmer world

    PubMed Central

    Chunco, Amanda J

    2014-01-01

    Climate change is profoundly affecting the evolutionary trajectory of individual species and ecological communities, in part through the creation of novel species assemblages. How climate change will influence competitive interactions has been an active area of research. Far less attention, however, has been given to altered reproductive interactions. Yet, reproductive interactions between formerly isolated species are inevitable as populations shift geographically and temporally as a result of climate change, potentially resulting in introgression, speciation, or even extinction. The susceptibility of hybridization rates to anthropogenic disturbance was first recognized in the 1930s. To date, work on anthropogenically mediated hybridization has focused primarily on either physical habitat disturbance or species invasion. Here, I review recent literature on hybridization to identify how ecological responses to climate change will increase the likelihood of hybridization via the dissolution of species barriers maintained by habitat, time, or behavior. Using this literature, I identify several cases where novel hybrid zones have recently formed, likely as a result of changing climate. Future research should focus on identifying areas and taxonomic groups where reproductive species interactions are most likely to be influenced by climate change. Furthermore, a better understanding of the evolutionary consequences of climate-mediated secondary contact is urgently needed. Paradoxically, hybridization is both a major conservation concern and an important source of novel genetic and phenotypic variation. Hybridization may therefore both contribute to increasing rates of extinction and stimulate the creation of novel phenotypes that will speed adaptation to novel climates. Predicting which result will occur following secondary contact will be an important contribution to conservation for many species. PMID:24963394

  19. Intelligent peak deconvolution through in-depth study of the data matrix from liquid chromatography coupled with a photo-diode array detector applied to pharmaceutical analysis.

    PubMed

    Arase, Shuntaro; Horie, Kanta; Kato, Takashi; Noda, Akira; Mito, Yasuhiro; Takahashi, Masatoshi; Yanagisawa, Toshinobu

    2016-10-21

    Multivariate curve resolution-alternating least squares (MCR-ALS) method was investigated for its potential to accelerate pharmaceutical research and development. The fast and efficient separation of complex mixtures consisting of multiple components, including impurities as well as major drug substances, remains a challenging application for liquid chromatography in the field of pharmaceutical analysis. In this paper we suggest an integrated analysis algorithm functioning on a matrix of data generated from HPLC coupled with photo-diode array detector (HPLC-PDA) and consisting of the mathematical program for the developed multivariate curve resolution method using an expectation maximization (EM) algorithm with a bidirectional exponentially modified Gaussian (BEMG) model function as a constraint for chromatograms and numerous PDA spectra aligned with time axis. The algorithm provided less than ±1.0% error between true and separated peak area values at resolution (Rs) of 0.6 using simulation data for a three-component mixture with an elution order of a/b/c with similarity (a/b)=0.8410, (b/c)=0.9123 and (a/c)=0.9809 of spectra at peak apex. This software concept provides fast and robust separation analysis even when method development efforts fail to achieve complete separation of the target peaks. Additionally, this approach is potentially applicable to peak deconvolution, allowing quantitative analysis of co-eluted compounds having exactly the same molecular weight. This is complementary to the use of LC-MS to perform quantitative analysis on co-eluted compounds using selected ions to differentiate the proportion of response attributable to each compound.

  20. Auger Recombination and Impact Ionization in Semiconductor Lasers and Avalanche Photodiodes.

    NASA Astrophysics Data System (ADS)

    Jiang, Yuan

    The telecommunication industry has been advancing very fast. Having used.8 μm optical fiber systems for a short time, the industry has quickly shifted to 1.3 and 1.5 μm optical fiber communication systems to achieve lower loss and longer distance between repeaters. However, the performance of the transmitters and receivers in the current long wavelength communication systems is not able to match that in the 0.8 μm communication system. The most serious problem with InGaAsP/InP lasers for 1.3 and 1.5 μm communications is their poor temperature performance. The threshold current of these lasers increases drastically with temperature at room temperature. This either causes thermal-run-off or makes a thermal controller a necessity even for a low -power laser. Studies have shown that the poor temperature performance in InGaAsP/InP lasers is caused by Auger recombination carrier losses. In GaAs lasers, Auger recombination carrier loss is not severe enough to degrade performance. However, it has been the major problem for most long-wavelength semiconductor lasers, such as InGaAsP/InP lasers for 1.3 and 1.5 μm communications. Not only transmitters, but also receivers for 1.3 and 1.5 μm communications face similar challenge. The performance of the InGaAsP/InP avalanche photodiodes (APDs) used in current systems is far from that of the Si APDs, which are nearly perfect, used in 0.8 μm systems. Avalanche (impact ionization) processes are the reverse Auger processes --carrier creation processes. They provide current amplification. Because virtually only one type of carrier (electron) multiplies in Si, the APDs have low noise figure and high gain-bandwidth products. The electron and hole impact ionization rates in InP are alike, which means the multiplication is a delayed positive feedback process. Therefore, these APDs are noisy amplifiers and have low gain-bandwidth products. At the best operating condition, the gain for a Si APD of several hundreds is typical, whereas

  1. Hybrid modulation driving power technology for pulsed laser fuze

    NASA Astrophysics Data System (ADS)

    Xu, Xiaobin; Zhang, He

    2016-10-01

    According to the requirement of the long range detection of the circumferential detection system of the laser fuze, a hybrid modulated pulsed laser driving power supplying for APD avalanche photodiode is designed. The working principle of the laser circumferential detection system is analyzed, and the APD is selected as the photoelectric detector according to the measurement equation of the circumferential detection system. According to the different kinds of APD requirements for high voltage power supply, the principle of boost converter is analyzed. By using PWM and PFM hybrid modulation type power supply technology, PWM modulation is applied in low rising voltage. When the voltage is required to achieve more than 100V, PFM mode boost is chosen. Simulation of the output voltages which are 85V and 200V of the two modes respectively is made. The PCB circuit board is processed to verify the experiment. The experimental results show that the hybrid modulation pulse laser drive power supply can meet the requirements of all kinds of APD power supply. The circuit board can be used in the detection of laser fuze with different target distance, and has wide application prospect.

  2. 25-Gbit/s burst-mode optical receiver using high-speed avalanche photodiode for 100-Gbit/s optical packet switching.

    PubMed

    Nada, Masahiro; Nakamura, Makoto; Matsuzaki, Hideaki

    2014-01-13

    25-Gbit/s error-free operation of an optical receiver is successfully demonstrated against burst-mode optical input signals without preambles. The receiver, with a high-sensitivity avalanche photodiode and burst-mode transimpedance amplifier, exhibits sufficient receiver sensitivity and an extremely quick response suitable for burst-mode operation in 100-Gbit/s optical packet switching.

  3. In0.53Ga0.47As metal-semiconductor-metal photodiodes with transparent cadmium tin oxide Schottky contacts

    NASA Astrophysics Data System (ADS)

    Gao, Wei; Khan, Al-Sameen; Berger, Paul R.; Hunsperger, R. G.; Zydzik, George; O'Bryan, H. M.; Sivco, D.; Cho, A. Y.

    1994-10-01

    A metal-semiconductor-metal (MSM) In0.53Ga0.47As photodiode using a transparent cadmium tin oxide (CTO) layer for the interdigitated electrodes was investigated. The transparent contact prevents shadowing of the active layer by the electrodes, thus allowing greater collection of incident light. The barrier height (φBn) of CTO on i-In0.52Al0.48As was determined to be 0.47 eV, while the Ti/Au barrier height was 0.595 eV. The reduced barrier height for CTO is caused by tunneling through the sputter-damaged cap layer. Responsivity for 1.3 μm incident light was 0.49 and 0.28 A/W, respectively, for the CTO and Ti/Au MSM photodiodes. No antireflection (AR) coating was utilized over the bare semiconductor surface. The CTO MSM photodiode shows a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes.

  4. Carrier transport mechanism of highly-sensitive niobium doped titanium dioxide/p-Si heterojunction photodiode under illuminations by solar simulated light

    NASA Astrophysics Data System (ADS)

    Gautam, Subodh K.; Das, Arkaprava; Singh, R. G.; Kumar, V. V. S.; Singh, Fouran

    2016-12-01

    Nano-crystalline Nb doped anatase TiO2 (NTO) thin film was deposited on p-type Si substrate for fabrication of n-NTO/p-Si heterojunction photodiode using RF magnetron sputtering technique. Rutherford backscattering spectrometry and Raman spectroscopy results suggest the substitutional incorporation of Nb5+ ions in anatase TiO2 lattice, which is evidenced from large stiffening of Eg(1) and softening of B1g Raman modes. The current density-voltage (J-V) characteristics are measured and important diode parameters of n-NTO/p-Si heterojunction diode are determined, such as ideality factor, barrier height, and series resistance. Diode exhibits excellent behavior under dark condition as rectification ratio is found to be ˜7 × 102 with high forward current density ˜1.54 A/cm2 at 5 V. The n-NTO/p-Si heterojunction works as an efficient photodiode in reverse bias under simulated solar light illumination with high contrast ratio ˜225 at -2 V and very high photo responsivity ˜2.7 A/W at -5 V. The high photo responsivity of photodiode is mainly due to the generation of high density electron-hole plasma in NTO depletion region by the absorption of incident UV range photons. Thus n-NTO/p-Si heterojunction diode is suitable device for highly sensitive Ultra-Violet photodiode applications.

  5. The Trace Analysis of DEET in Water using an On-line Preconcentration Column and Liquid Chromatography with UV Photodiode Array Detection

    EPA Science Inventory

    A method for the detection of trace levels of N,N-diethyl-m-toluamide (DEET) in water is discussed. The method utilizes an on-line preconcentration column in series with high performance liquid chromatography (HPLC) and UV photodiode array detection. DEET, a common insect repel...

  6. X-ray and charged particle detection with CsI(Tl) layer coupled to a-Si:H photodiode layers

    SciTech Connect

    Fujieda, I.; Cho, G.; Drewery, J.; Gee, T.; Jing, T.; Kaplan, S.N.; Perez-Mendez, V.; Wildermuth, D. ); Street, R.A. )

    1990-10-01

    A compact real-time X-ray and charged particle imager with digitized position output can built either by coupling a fast scintillator to a photodiode array or by forming one on a photodiode array directly. CsI(Tl) layers 100--1000{mu}m thick were evaporated on glass substrates from a crystal CsI(Tl). When coupled to a crystalline Si or amorphous silicon (a-Si:H) photodiode and exposed to calibrated X-ray pulses, their light yields and speed were found to be comparable to those of a crystal CsI(Tl). Single {beta} particle detection was demonstrated with this combination. The light spread inside evaporated CsI(Tl) was suppressed by its columnar structure. Scintillation detection gives much larger signals than direct X-ray detection due to the increased energy deposition in the detector material. Fabrication of monolithic type X-ray sensors consisting of CsI + a-Si:H photodiodes is discussed. 20 refs., 16 figs.

  7. AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

    SciTech Connect

    Sun, K. X.

    2011-05-31

    This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

  8. Description of the Role of Shot Noise in Spectroscopic Absorption and Emission Measurements with Photodiode and Photomultiplier Tube Detectors: Information for an Instrumental Analysis Course

    ERIC Educational Resources Information Center

    McClain, Robert L.; Wright, John C.

    2014-01-01

    A description of shot noise and the role it plays in absorption and emission measurements using photodiode and photomultiplier tube detection systems is presented. This description includes derivations of useful forms of the shot noise equation based on Poisson counting statistics. This approach can deepen student understanding of a fundamental…

  9. Arabidopsis hybrid speciation processes

    PubMed Central

    Schmickl, Roswitha; Koch, Marcus A.

    2011-01-01

    The genus Arabidopsis provides a unique opportunity to study fundamental biological questions in plant sciences using the diploid model species Arabidopsis thaliana and Arabidopsis lyrata. However, only a few studies have focused on introgression and hybrid speciation in Arabidopsis, although polyploidy is a common phenomenon within this genus. More recently, there is growing evidence of significant gene flow between the various Arabidopsis species. So far, we know Arabidopsis suecica and Arabidopsis kamchatica as fully stabilized allopolyploid species. Both species evolved during Pleistocene glaciation and deglaciation cycles in Fennoscandinavia and the amphi-Beringian region, respectively. These hybrid studies were conducted either on a phylogeographic scale or reconstructed experimentally in the laboratory. In our study we focus at a regional and population level. Our research area is located in the foothills of the eastern Austrian Alps, where two Arabidopsis species, Arabidopsis arenosa and A. lyrata ssp. petraea, are sympatrically distributed. Our hypothesis of genetic introgression, migration, and adaptation to the changing environment during the Pleistocene has been confirmed: We observed significant, mainly unidirectional gene flow between the two species, which has given rise to the tetraploid A. lyrata. This cytotype was able to escape from the narrow ecological niche occupied by diploid A. lyrata ssp. petraea on limestone outcrops by migrating northward into siliceous areas, leaving behind a trail of genetic differentiation. PMID:21825128

  10. Design, construction, characterization, and operation of a hybrid cosmic rays detector based on an electron gas

    NASA Astrophysics Data System (ADS)

    Rosas-Torres, F. J.; Hernández-Morquecho, M. A.; Sánchez-Sánchez, J.; Félix, J.

    2017-01-01

    There are several sources that produce very energetic cosmic rays that interact with the Earth’s atmosphere and create new particles. To detect them there are different methods such as the ionization of a material and Cerenkov radiation, among others. In this work a hybrid cosmic ray detector of 6 channels was designed, built, tested and operated. Being hybrid is possible to validate the signal with the two detection methods. Three Copper bars were used as detection material, each with an ionization and a Cerenkov radiation detection channel. To detect the Cerenkov radiation, Hamamatsu silicon photodiodes were used, and for the ionization channels an RC circuit was developed to measure the signal. The number of signals was counted using discriminator boards, which digitize the signal. With the counts the cosmic rays flux can be measured. The six channels were tested simultaneously. Data collections and analysis were performed. Details of the design, characterization, testing, operation, data analysis and preliminary results are presented.

  11. Active quench and reset integrated circuit with novel hold-off time control logic for Geiger-mode avalanche photodiodes.

    PubMed

    Deng, Shijie; Morrison, Alan P

    2012-09-15

    This Letter presents an active quench-and-reset circuit for Geiger-mode avalanche photodiodes (GM-APDs). The integrated circuit was fabricated using a conventional 0.35 μm complementary metal oxide semiconductor process. Experimental results show that the circuit is capable of linearly setting the hold-off time from several nanoseconds to microseconds with a resolution of 6.5 ns. This allows the selection of the optimal afterpulse-free hold-off time for the GM-APD via external digital inputs or additional signal processing circuitry. Moreover, this circuit resets the APD automatically following the end of the hold-off period, thus simplifying the control for the end user. Results also show that a minimum dead time of 28.4 ns is achieved, demonstrating a saturated photon-counting rate of 35.2 Mcounts/s.

  12. Microfluidic biosensor array with integrated poly(2,7-carbazole)/fullerene-based photodiodes for rapid multiplexed detection of pathogens.

    PubMed

    Matos Pires, Nuno Miguel; Dong, Tao

    2013-11-25

    A multiplexed microfluidic biosensor made of poly(methylmethacrylate) (PMMA) was integrated into an array of organic blend heterojunction photodiodes (OPDs) for chemiluminescent detection of pathogens. Waterborne Escherichia coli O157:H7, Campylobacter jejuni and adenovirus were targeted in the PMMA chip, and detection of captured pathogens was conducted by poly(2,7-carbazole)/fullerene OPDs which showed a responsivity over 0.20 A/W at 425 nm. The limits of chemiluminescent detection were 5 × 10(5) cells/mL for E. coli, 1 × 10(5) cells/mL for C. jejuni, and 1 × 10(-8) mg/mL for adenovirus. Parallel analysis for all three analytes in less than 35 min was demonstrated. Further recovery tests illustrated the potential of the integrated biosensor for detecting bacteria in real water samples.

  13. Analysis of frequency response of high power MUTC photodiodes based on photocurrent-dependent equivalent circuit model.

    PubMed

    Li, Jin; Xiong, Bing; Sun, Changzheng; Miao, Di; Luo, Yi

    2015-08-24

    A back-illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) is fabricated and its frequency response is investigated. A bandwidth of 40 GHz and a saturation photocurrent up to 33 mA are demonstrated. A photocurrent-dependent equivalent circuit model is proposed to analyze the frequency response of the high power MUTC-PDs. The influences of the space-charge screening, self-induced electric field and over-shoot effects are discussed in detail based on the model. Fitted curves obtained from the simple equivalent circuit model are found to be in good agreement with the data measured under different bias voltages and photocurrents.

  14. Conversion of a sequential inductively coupled plasma emission spectrometer into a multichannel simultaneous system using a photodiode array detector

    PubMed Central

    Araújo, Mário César Ugulino; Neto, Benício de Barros; Pasquini, Célio

    1998-01-01

    A monochannel plasma emission spectrometer was converted to a multichannel instrument by the introduction of a detection system based on an array of 1024 photodiodes and a low-resolution dispersion device. The new, relatively inexpensive equipment, features both the high speed typical of simultaneous instruments and the versatility of scanning systems. This paper reports on an evaluation of the modified equipment for quantitative analysis with the simultaneous determination of Al, Mn, Mg, Ca, Fe and Cu in a natural water matrix. An average relative prediction error of 2.4% was found which is the same as the error obtained with the conventional analytical method. Data acquisition with the modified instrument is up to 40 times faster. PMID:18924819

  15. Ratiometric, filter-free optical sensor based on a complementary metal oxide semiconductor buried double junction photodiode.

    PubMed

    Yung, Ka Yi; Zhan, Zhiyong; Titus, Albert H; Baker, Gary A; Bright, Frank V

    2015-07-16

    We report a complementary metal oxide semiconductor integrated circuit (CMOS IC) with a buried double junction (BDJ) photodiode that (i) provides a real-time output signal that is related to the intensity ratio at two emission wavelengths and (ii) simultaneously eliminates the need for an optical filter to block Rayleigh scatter. We demonstrate the BDJ platform performance for gaseous NH3 and aqueous pH detection. We also compare the BDJ performance to parallel results obtained by using a slew scanned fluorimeter (SSF). The BDJ results are functionally equivalent to the SSF results without the need for any wavelength filtering or monochromators and the BDJ platform is not prone to errors associated with source intensity fluctuations or sensor signal drift.

  16. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    NASA Astrophysics Data System (ADS)

    Kesaria, M.; de la Mare, M.; Krier, A.

    2016-11-01

    Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in situ by reflection high energy electron diffraction and ex situ by high resolution x-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron-heavy hole (e1-hh1) and electron-light hole (e1-lh1) transitions in the InAsSbN MQW, with a cut off wavelength ~4.20 µm and peak detectivity D *  =  1.25  ×  109 cm Hz1/2 W-1.

  17. A discrete component low-noise preamplifier readout for a linear (1×16) SiC photodiode array

    NASA Astrophysics Data System (ADS)

    Kahle, Duncan; Aslam, Shahid; Herrero, Federico A.; Waczynski, Augustyn

    2016-09-01

    A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1×16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analog signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

  18. New design of InGaAs guided-mode resonance photodiode for SWIR low dark current imaging

    NASA Astrophysics Data System (ADS)

    Verdun, Michaël.; Portier, Benjamin; Jaworowicz, Katarzyna; Jaeck, Julien; Dupuis, Christophe; Haidar, Riad; Pardo, Fabrice; Pelouard, Jean-Luc

    2016-04-01

    We investigate a full-dielectric guided mode resonant photodiode. It has been designed to enhance the absorption by excitation of several resonances in the SWIR domain. The device consists of an InP/InGaAs/InP P-i-N heterojunction containing an active layer as thin as 90 nm on top of a subwavelength lamellar grating and a gold mirror. We successfully compared the electro-optical characterizations of individual pixels with electro-magnetic simulations. In particular, we observe near perfect collection of the photo-carriers and external quantum efficiency (EQE) of up to 71% around 1.55 μm. Moreover, compared with InGaAs resonator state-of-the-art detector, we show a broader spectral response in the 1.2-1.7 μm range, thus paving the way for SWIR low dark current imaging.

  19. Identification of fish species by reversed-phase high-performance liquid chromatography with photodiode-array detection.

    PubMed

    Knuutinen, J; Harjula, P

    1998-01-23

    A method for the separation of sarcoplasmic fish proteins by RP-HPLC is described. The procedure revealed significant differences useful for reliable identification of fish species. Sixteen of the most common Finnish freshwater fish species were differentiated by species-specific HPLC chromatograms obtained using photodiode-array detection (PAD) at 200-350 nm. The analytical column was a Hi-Pore RP-304 reversed-phase column. The separation was performed by a linear gradient of acetonitrile and water with a small amount of trifluoracetic acid (TFA). Star-symbol plots were constructed from the chromatograms to visualize the data. Clearly different HPLC protein profiles for most fish species were obtained. The chromatograms of salmonoids show similarities, whereas the protein profiles of cyprinids are dissimilar. Minor intraspecific differences were obtained for three types of powan (Coregonus lavaretus).

  20. Measurement of the water content in oil and oil products using IR light-emitting diode-photodiode optrons

    NASA Astrophysics Data System (ADS)

    Bogdanovich, M. V.; Kabanau, D. M.; Lebiadok, Y. V.; Shpak, P. V.; Ryabtsev, A. G.; Ryabtsev, G. I.; Shchemelev, M. A.; Andreev, I. A.; Kunitsyna, E. V.; Ivanov, E. V.; Yakovlev, Yu. P.

    2017-02-01

    The feasibility of using light-emitting devices, the radiation spectrum of which has maxima at wavelengths of 1.7, 1.9, and 2.2 μm for determining the water concentration in oil and oil products (gasoline, kerosene, diesel fuel) has been demonstrated. It has been found that the measurement error can be lowered if (i) the temperature of the light-emitting diode is maintained accurate to 0.5-1.0°C, (ii) by using a cell through which a permanently stirred analyte is pumped, and (iii) by selecting the repetition rate of radiation pulses from the light-emitting diodes according to the averaging time. A meter of water content in oil and oil products has been developed that is built around IR light-emitting device-photodiode optrons. This device provides water content on-line monitoring accurate to 1.5%.

  1. The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications.

    PubMed

    Yang, Haojun; Ma, Ziguang; Jiang, Yang; Wu, Haiyan; Zuo, Peng; Zhao, Bin; Jia, Haiqiang; Chen, Hong

    2017-02-27

    We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is enhanced by the p-n junction. Additionally, the carrier extraction becomes more distinct under a reverse bias. Our finding brings better understanding of the physical characteristics of quantum wells with p-n junction, which also suggests that the quantum well is suitable for photodiode detectors applications when a p-n junction is used.

  2. An overview of avalanche photodiodes and pulsed lasers as they are used in 3D laser radar type applications

    NASA Astrophysics Data System (ADS)

    Dion, Bruno; Bertone, Nick

    2004-08-01

    This paper will examine how Avalanche Photodiodes (APD) and Infrared Pulsed lasers (PL) are used and optimized to provide the "intelligence" to smart weapons. The basics of APD's and PL will be covered and the principle "time of flight ranging" which is the underlining principle of 3D laser radar will be illustrated. The time of flight principle is used for range finding, lidar, 3D laser radar and speed measurements - this information can then be used to provide intelligence to the smart weapon. Examples of such systems are discussed and illustrated, for example: Cluster bombs, Proximity fuses, and how laser range finding systems can be incorporated with GPS to produce effective and lethal weapons. The APD's that are discussed include silicon APD's for cost effective weapons, and 1550nm APDs for eye-safe systems. An overview of the different PL's will be outlined, but the focus will be on 905nm laser pulsars for cost effective laser weapons.

  3. The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications

    PubMed Central

    Yang, Haojun; Ma, Ziguang; Jiang, Yang; Wu, Haiyan; Zuo, Peng; Zhao, Bin; Jia, Haiqiang; Chen, Hong

    2017-01-01

    We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is enhanced by the p-n junction. Additionally, the carrier extraction becomes more distinct under a reverse bias. Our finding brings better understanding of the physical characteristics of quantum wells with p-n junction, which also suggests that the quantum well is suitable for photodiode detectors applications when a p-n junction is used. PMID:28240254

  4. Low-voltage-operation avalanche photodiode based on n-gallium oxide/p-crystalline selenium heterojunction

    SciTech Connect

    Imura, S. Kikuchi, K.; Miyakawa, K.; Ohtake, H.; Kubota, M.

    2014-06-16

    In this study, we demonstrate the avalanche multiplication phenomenon in a crystalline-selenium (c-Se)-based heterojunction photodiode. The carrier injection from an external electrode, which is considered to be the major factor contributing to dark current at a high electric field, was significantly decreased by employing a thin n-type Ga{sub 2}O{sub 3} layer with a high hole-injection barrier. The fabricated Ga{sub 2}O{sub 3}/c-Se diode exhibited extremely high external quantum efficiency of over 100% in the short-wavelength region at a relatively low reverse-bias voltage of ∼20 V. Furthermore, Sn-doping of the Ga{sub 2}O{sub 3} layer increases the carrier concentration; hence, the resulting device has a lower threshold voltage for avalanche multiplication.

  5. Al0.2Ga0.8As X-ray photodiodes for X-ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Whitaker, M. D. C.; Lioliou, G.; Butera, S.; Barnett, A. M.

    2016-12-01

    Three custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200 μm diameter, 3 μm i layer) were electrically characterised and investigated for their response to illumination with soft X-rays from an 55Fe radioisotope X-ray source (Mn Kα = 5.9 keV; Mn Kβ = 6.49 keV). The AlGaAs photodiodes were shown to be suitable for photon counting X-ray spectroscopy at room temperature. When coupled to a custom-made low-noise charge-sensitive preamplifier, a mean energy resolution (as quantified by the full width at half maximum of the 5.9 keV photopeak) of 1.24 keV was measured at room temperature. Parameters such as the depletion width (1.92 μm at 10 V), charge trapping noise (61.7 e- rms ENC at 5 V, negligible at 10 V) and the electronic noise components (known dielectric noise (63.4 e- rms), series white noise (27.7 e- rms), parallel white noise (9.5 e- rms) and 1/f series noise (2.2 e- rms) at 10 V reverse bias) affecting the achieved energy resolution were computed. The estimated charge trapping noise and mean energy resolution were compared to similar materials (e.g. Al0.8Ga0.2As) previously reported, and discussed. These results are the first demonstration of photon counting X-ray spectroscopy with Al0.2Ga0.8As reported to date.

  6. Anticancer hybrids--a patent survey.

    PubMed

    Nepali, Kunal; Sharma, Sahil; Kumar, Dinesh; Budhiraja, Abhishek; Dhar, Kanaya L

    2014-01-01

    The molecular hybridization (MH) is a strategy of rational design of such ligands or prototypes based on the recognition of pharmacophoric sub-units in the molecular structure of two or more known bioactive derivatives which, through the adequate fusion of these sub-units, lead to the design of new hybrid architectures that maintain pre-selected characteristics of the original templates. The concept of molecular hybridization and the promises/challenges associated with these hybrid molecules along with recent advances on anticancer hybrids and critical discussions on the future aspects of the hybrid drugs have already been presented through a number of reports. However, this article presents the structures of potent hybrids reported during the last two decades along with a detailed account of the patent literature. Significant number of patents on the molecules designed through this valuable drug design technique clearly highlight the present focus of the researchers all around the globe towards hybrid molecules capable of amplifying the effect of individual functionalities through action on another bio target or to interact with multiple targets as one single molecule lowering the risk of drug-drug interactions and minimizing the drug resistance. This review article basically emphasizes the patent literature along with an overview of potent hybrid structures, their IC50 /GI50 values against the various cell lines employed. The present compilation can be utilized as a guide for the medicinal chemists focusing on this area of drug design.

  7. Hybrid Arrays for Chemical Sensing

    NASA Astrophysics Data System (ADS)

    Kramer, Kirsten E.; Rose-Pehrsson, Susan L.; Johnson, Kevin J.; Minor, Christian P.

    intelligence and robotics, all share the same essential data fusion challenges. The design of a hybrid sensor array should draw on this extended body of knowledge. In this chapter, various techniques for data preprocessing, feature extraction, feature selection, and modeling of sensor data will be introduced and illustrated with data fusion approaches that have been implemented in applications involving data from hybrid arrays. The example systems discussed in this chapter involve the development of prototype sensor networks for damage control event detection aboard US Navy vessels and the development of analysis algorithms to combine multiple sensing techniques for enhanced remote detection of unexploded ordnance (UXO) in both ground surveys and wide area assessments.

  8. Hybrid mimics and hybrid vigor in Arabidopsis.

    PubMed

    Wang, Li; Greaves, Ian K; Groszmann, Michael; Wu, Li Min; Dennis, Elizabeth S; Peacock, W James

    2015-09-01

    F1 hybrids can outperform their parents in yield and vegetative biomass, features of hybrid vigor that form the basis of the hybrid seed industry. The yield advantage of the F1 is lost in the F2 and subsequent generations. In Arabidopsis, from F2 plants that have a F1-like phenotype, we have by recurrent selection produced pure breeding F5/F6 lines, hybrid mimics, in which the characteristics of the F1 hybrid are stabilized. These hybrid mimic lines, like the F1 hybrid, have larger leaves than the parent plant, and the leaves have increased photosynthetic cell numbers, and in some lines, increased size of cells, suggesting an increased supply of photosynthate. A comparison of the differentially expressed genes in the F1 hybrid with those of eight hybrid mimic lines identified metabolic pathways altered in both; these pathways include down-regulation of defense response pathways and altered abiotic response pathways. F6 hybrid mimic lines are mostly homozygous at each locus in the genome and yet retain the large F1-like phenotype. Many alleles in the F6 plants, when they are homozygous, have expression levels different to the level in the parent. We consider this altered expression to be a consequence of transregulation of genes from one parent by genes from the other parent. Transregulation could also arise from epigenetic modifications in the F1. The pure breeding hybrid mimics have been valuable in probing the mechanisms of hybrid vigor and may also prove to be useful hybrid vigor equivalents in agriculture.

  9. Hybridization and Selective Release of DNA Microarrays

    SciTech Connect

    Beer, N R; Baker, B; Piggott, T; Maberry, S; Hara, C M; DeOtte, J; Benett, W; Mukerjee, E; Dzenitis, J; Wheeler, E K

    2011-11-29

    DNA microarrays contain sequence specific probes arrayed in distinct spots numbering from 10,000 to over 1,000,000, depending on the platform. This tremendous degree of multiplexing gives microarrays great potential for environmental background sampling, broad-spectrum clinical monitoring, and continuous biological threat detection. In practice, their use in these applications is not common due to limited information content, long processing times, and high cost. The work focused on characterizing the phenomena of microarray hybridization and selective release that will allow these limitations to be addressed. This will revolutionize the ways that microarrays can be used for LLNL's Global Security missions. The goals of this project were two-fold: automated faster hybridizations and selective release of hybridized features. The first study area involves hybridization kinetics and mass-transfer effects. the standard hybridization protocol uses an overnight incubation to achieve the best possible signal for any sample type, as well as for convenience in manual processing. There is potential to significantly shorten this time based on better understanding and control of the rate-limiting processes and knowledge of the progress of the hybridization. In the hybridization work, a custom microarray flow cell was used to manipulate the chemical and thermal environment of the array and autonomously image the changes over time during hybridization. The second study area is selective release. Microarrays easily generate hybridization patterns and signatures, but there is still an unmet need for methodologies enabling rapid and selective analysis of these patterns and signatures. Detailed analysis of individual spots by subsequent sequencing could potentially yield significant information for rapidly mutating and emerging (or deliberately engineered) pathogens. In the selective release work, optical energy deposition with coherent light quickly provides the thermal energy to

  10. Ionic electroactive hybrid transducers

    NASA Astrophysics Data System (ADS)

    Akle, Barbar J.; Bennett, Matthew D.; Leo, Donald J.

    2005-05-01

    Ionic electroactive actuators have received considerable attention in the past ten years. Ionic electroactive polymers, sometimes referred to as artificial muscles, have the ability to generate large bending strain and moderate stress at low applied voltages. Typical types of ionic electroactive polymer transducers include ionic polymers, conducting polymers, and carbon nanotubes. Preliminary research combining multiple types of materials proved to enhance certain transduction properties such as speed of response, maximum strain, or quasi-static actuation. Recently it was demonstrated that ionomer-ionic liquid transducers can operate in air for long periods of time (>250,000 cycles) and showed potential to reduce or eliminate the back-relaxation issue associated with ionomeric polymers. In addition, ionic liquids have higher electrical stability window than those operated with water as the solvent thereby increasing the maximum strain that the actuator can produce. In this work, a new technique developed for plating metal particulates on the surface of ionomeric materials is applied to the development of hybrid transducers that incorporate carbon nanotubes and conducting polymers as electrode materials. The new plating technique, named the direct assembly process, consists of mixing a conducting powder with an ionomer solution. This technique has demonstrated improved response time and strain output as compared to previous methods. Furthermore, the direct assembly process is less costly to implement than traditional impregnation-reduction methods due to less dependence on reducing agents, it requires less time, and is easier to implement than other processes. Electrodes applied using this new technique of mixing RuO2 (surface area 45~65m2/g) particles and Nafion dispersion provided 5x the displacement and 10x the force compared to a transducer made with conventional methods. Furthermore, the study illustrated that the response speed of the transducer is optimized

  11. Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Malinowski, Pawel E.; Duboz, Jean-Yves; De Moor, Piet; Minoglou, Kyriaki; John, Joachim; Horcajo, Sara Martin; Semond, Fabrice; Frayssinet, Eric; Verhoeve, Peter; Esposito, Marco; Giordanengo, Boris; BenMoussa, Ali; Mertens, Robert; Van Hoof, Chris

    2011-04-01

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection.

  12. Hybrid Ionosilica containing aromatic groups

    NASA Astrophysics Data System (ADS)

    Thach, U. D.; Prelot, B.; Hesemann, P.

    2015-07-01

    Ionosilicas are defined as mesostructured silica based materials bearing covalently bound ionic groups. These materials, situated at the interface of ionic liquids and structured silica mesophases, are usually synthesized following template directed hydrolysis-polycondensation procedures starting from silylated ionic compounds. Here, we report new ammonium type hybrid ionosilicas containing aromatic groups which can serve as a new platform for the design of functional materials, for applications in the areas of ion exchange reactions, drug delivery or wastewater treatment.

  13. Electric and hybrid vehicles program

    NASA Astrophysics Data System (ADS)

    1993-08-01

    The progress achieved in developing electric and hybrid vehicle technologies, beginning with highlights of recent accomplishments in FY 1992 is described. Detailed descriptions are provided of program activities during FY 1992 in the areas of battery, fuel cell, and propulsion system development, and testing and evaluation of new technology in fleet site operations and in laboratories. This Annual Report also contains a status report on incentives and use of foreign components, as well as a list of publications resulting from the DOE program.

  14. Polymer waveguide based hybrid opto-electric integration technology

    NASA Astrophysics Data System (ADS)

    Mao, Jinbin; Deng, Lingling; Jiang, Xiyan; Ren, Rong; Zhai, Yumeng; Wang, Jin

    2014-10-01

    While monolithic integration especially based on InP appears to be quite an expensive solution for optical devices, hybrid integration solutions using cheaper material platforms are considered powerful competitors because of the high freedom of design, yield optimization and relative cost-efficiency. Among them, the polymer planar-lightwave circuit (PLC) technology is regarded attractive as polymer offers the potential of fairly simple and low-cost fabrication, and of low-cost packaging. In our work, polymer PLC was fabricated by using the standard reactive ion etching (RIE) technique, while other active and passive devices can be integrated on the polymer PLC platform. Exemplary polymer waveguide devices was a 13-channel arrayed waveguide grating (AWG) chip, where the central channel cross-talk was below -30dB and the polarization dependent frequency shift was mitigated by inserting a half wave plate. An optical 900 hybrid was also realized with one 2×4 multi-mode interferometer (MMI). The excess insertion losses are below 4dB for the C-band, while the transmission imbalance is below 1.2dB. When such an optical hybrid was integrated vertically with mesa-type photodiodes, the responsivity of the individual PD was around 0.06 A/W, while the 3 dB bandwidth reaches 24 ~ 27 GHz, which is sufficient for 100Gbit/s receivers. Another example of the hybrid integration was to couple the polymer waveguides to fiber by applying fiber grooves, whose typical loss value was 0.2 dB per-facet over a broad spectral range from 1200-1600 nm.

  15. Hybrid rocket propulsion

    NASA Technical Reports Server (NTRS)

    Holzman, Allen L.

    1993-01-01

    Topics addressed are: (1) comparison of the theoretical impulses; (2) comparison of the density-specific impulses; (3) general propulsion system features comparison; (4) hybrid systems, booster applications; and (5) hybrid systems, upper stage propulsion applications.

  16. From hybrid swarms to swarms of hybrids

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The introgression of modern humans (Homo sapiens) with Neanderthals 40,000 YBP after a half-million years of separation, may have led to the best example of a hybrid swarm on earth. Modern trade and transportation in support of the human hybrids has continued to introduce additional species, genotyp...

  17. Conception d'un circuit d'etouffement pour photodiodes a avalanche en mode geiger pour integration heterogene 3d

    NASA Astrophysics Data System (ADS)

    Boisvert, Alexandre

    Le Groupe de Recherche en Appareillage Medical de Sherbrooke (GRAMS) travaille actuellement sur un programme de recherche portant sur des photodiodes a avalanche mono-photoniques (PAMP) operees en mode Geiger en vue d'une application a la tomographie d'emission par positrons (TEP). Pour operer dans ce mode; la PAMP, ou SPAD selon l'acronyme anglais (Single Photon Avalanche Diode), requiert un circuit d'etouffement (CE) pour, d'une part, arreter l'avalanche pouvant causer sa destruction et, d'autre part. la reinitialiser en mode d'attente d'un nouveau photon. Le role de ce CE comprend egalement une electronique de communication vers les etages de traitement avance de signaux. La performance temporelle optimale du CE est realisee lorsqu'il est juxtapose a la PAMP. Cependant, cela entraine une reduction de la surface photosensible ; un element crucial en imagerie. L'integration 3D, a base d'interconnexions verticales, offre une solution elegante et performante a cette problematique par l'empilement de circuits integres possedant differentes fonctions (PAMP, CE et traitement avance de signaux). Dans l'approche proposee, des circuits d'etouffement de 50 pm x 50 pm realises sur une technologie CMOS 130 mn 3D Tezzaron, contenant chacun 112 transistors, sont matrices afin de correspondre a une matrice de PAMP localisee sur une couche electronique superieure. Chaque circuit d'etouffement possede une gigue temporelle de 7,47 ps RMS selon des simulations faites avec le logiciel Cadence. Le CE a la flexibilite d'ajuster les temps d'etouffement et de recharge pour la PAMP tout en presentant une faible consommation de puissance (~ 0,33 mW a 33 Mcps). La conception du PAMP necessite de supporter des tensions superieures aux 3,3 V de la technologie. Pour repondre a ce probleme, des transistors a drain etendu (DEMOS) ont ete realises. En raison de retards de production par Ies fabricants, les circuits n'ont pu etre testes physiquement par des mesures. Les resultats de ce memoire

  18. Infrared to visible image up-conversion using optically addressed spatial light modulator utilizing liquid crystal and InGaAs photodiodes

    SciTech Connect

    Solodar, A. Arun Kumar, T.; Sarusi, G.; Abdulhalim, I.

    2016-01-11

    Combination of InGaAs/InP heterojunction photodetector with nematic liquid crystal (LC) as the electro-optic modulating material for optically addressed spatial light modulator for short wavelength infra-red (SWIR) to visible light image conversion was designed, fabricated, and tested. The photodetector layer is composed of 640 × 512 photodiodes array based on heterojunction InP/InGaAs having 15 μm pitch on InP substrate and with backside illumination architecture. The photodiodes exhibit extremely low, dark current at room temperature, with optimum photo-response in the SWIR region. The photocurrent generated in the heterojunction, due to the SWIR photons absorption, is drifted to the surface of the InP, thus modulating the electric field distribution which modifies the orientation of the LC molecules. This device can be attractive for SWIR to visible image upconversion, such as for uncooled night vision goggles under low ambient light conditions.

  19. Infrared to visible image up-conversion using optically addressed spatial light modulator utilizing liquid crystal and InGaAs photodiodes

    NASA Astrophysics Data System (ADS)

    Solodar, A.; Arun Kumar, T.; Sarusi, G.; Abdulhalim, I.

    2016-01-01

    Combination of InGaAs/InP heterojunction photodetector with nematic liquid crystal (LC) as the electro-optic modulating material for optically addressed spatial light modulator for short wavelength infra-red (SWIR) to visible light image conversion was designed, fabricated, and tested. The photodetector layer is composed of 640 × 512 photodiodes array based on heterojunction InP/InGaAs having 15 μm pitch on InP substrate and with backside illumination architecture. The photodiodes exhibit extremely low, dark current at room temperature, with optimum photo-response in the SWIR region. The photocurrent generated in the heterojunction, due to the SWIR photons absorption, is drifted to the surface of the InP, thus modulating the electric field distribution which modifies the orientation of the LC molecules. This device can be attractive for SWIR to visible image upconversion, such as for uncooled night vision goggles under low ambient light conditions.

  20. Enhanced photoresponse of conformal TiO{sub 2}/Ag nanorod array-based Schottky photodiodes fabricated via successive glancing angle and atomic layer deposition

    SciTech Connect

    Haider, Ali; Biyikli, Necmi; Cansizoglu, Hilal; Cansizoglu, Mehmet Fatih; Karabacak, Tansel; Okyay, Ali Kemal

    2015-01-01

    In this study, the authors demonstrate a proof of concept nanostructured photodiode fabrication method via successive glancing angle deposition (GLAD) and atomic layer deposition (ALD). The fabricated metal-semiconductor nanorod (NR) arrays offer enhanced photoresponse compared to conventional planar thin-film counterparts. Silver (Ag) metallic NR arrays were deposited on Ag-film/Si templates by utilizing GLAD. Subsequently, titanium dioxide (TiO{sub 2}) was deposited conformally on Ag NRs via ALD. Scanning electron microscopy studies confirmed the successful formation of vertically aligned Ag NRs deposited via GLAD and conformal deposition of TiO{sub 2} on Ag NRs via ALD. Following the growth of TiO{sub 2} on Ag NRs, aluminum metallic top contacts were formed to complete the fabrication of NR-based Schottky photodiodes. Nanostructured devices exhibited a photo response enhancement factor of 1.49 × 10{sup 2} under a reverse bias of 3 V.

  1. Performance prospects for the CMS electromagnetic calorimeter barrel avalanche photodiodes for LHC phase I and phase II: Radiation hardness and longevity

    NASA Astrophysics Data System (ADS)

    Addesa, F.; Cavallari, F.

    2015-07-01

    The electromagnetic calorimeter of the Compact Muon Solenoid (CMS) experiment at the LHC is a hermetic, fine-grained, homogeneous calorimeter, comprising 75,848 lead tungstate scintillating crystals. Avalanche photodiodes produced by Hamamatsu are used as sensors for the electromagnetic barrel calorimeter. These devices were tested for radiation hardness assuming an integrated luminosity of 500 fb-1, which corresponds to a neutron fluence of 2- 4 ×1013 n /cm2, depending on the detector location. Beginning in 2022, a new phase of the LHC is foreseen to exploit the full potential of the accelerator, which will deliver 3000 fb-1 of integrated luminosity. Irradiation studies up to a fluence of 1.5 ×1014 n /cm2 have been performed to qualify the avalanche photodiodes for radiation hardness. We present measurements of gain, quantum efficiency and noise, and discuss the implications for the CMS electromagnetic barrel calorimeter performance.

  2. 100.29-Gb/s direct detection optical OFDM/OQAM 32-QAM signal over 880  km SSMF transmission using a single photodiode.

    PubMed

    Li, Chao; Yang, Qi; Luo, Ming; He, Zhixue; Li, Haibo; Hu, Rong; Yu, Shaohua

    2015-04-01

    We propose a novel guard-band-shared direct-detection (GBS-DD) scheme for a 100-Gb/s single-photodiode direct-detection transmission system. The 100.29 Gb/s signal is successfully transmitted over 880 km standard single mode fiber (SSMF) with Raman amplification under the 20% forward error correction (FEC) threshold within 52 GHz optical bandwidth. The signal is modulated with orthogonal frequency-division multiplexing/offset quadrature-amplitude-modulation 32-ary QAM (OFDM/OQAM 32-QAM). The signal-to-signal beat interference (SSBI) terms fall and overlap in the same guard band. Adopting the proposed approach, the bandwidth usage efficiency of the photodiode is greatly enhanced, which brings benefits on the data rate and transmission performance.

  3. Electro-Optical Characteristics of P+n In0.53Ga0.47As Hetero-Junction Photodiodes in Large Format Dense Focal Plane Arrays

    NASA Astrophysics Data System (ADS)

    DeWames, R.; Littleton, R.; Witte, K.; Wichman, A.; Bellotti, E.; Pellegrino, J.

    2015-08-01

    This paper is concerned with focal plane array (FPA) data and use of analytical and three-dimensional numerical simulation methods to determine the physical effects and processes limiting performance. For shallow homojunction P+n designs the temperature dependence of dark current for T < 300 K depends on the intrinsic carrier concentration of the In0.53Ga0.47As material, implying that the dominant dark currents are generation and recombination (G-R) currents originating in the depletion regions of the double layer planar heterostructure (DLPH) photodiode. In the analytical model differences from bulk G-R behavior are modeled with a G-R like perimeter-dependent shunt current conjectured to originate at the InP/InGaAs interface. In this description the fitting property is the effective conductivity, σ eff( T), in mho cm-1. Variation in the data suggests σ eff (300 K) values of 1.2 × 10-11-4.6 × 10-11 mho cm-1). Substrate removal extends the quantum efficiency (QE) spectral band into the visible region. However, dead-layer effects limit the QE to 10% at a wavelength of 0.5 μm. For starlight-no moon illumination conditions, the signal-to-noise ratio is estimated to be 50 at an operating temperature of 300 K. A major result of the 3D numerical simulation of the device is the prediction of a perimeter G-R current not associated with the properties of the metallurgical interface. Another is the prediction that for a junction positioned in the larger band gap InP cap layer the QE is bias-dependent and that a relatively large reverse bias ≥0.9 V is needed for the QE to saturate to the shallow homojunction value. At this higher bias the dark current is larger than the shallow homojunction value. The 3D numerical model and the analytical model agree in predicting and explaining the measured radiatively limited diffusion current originating at the n-side of the junction. The calculations of the area-dependent G-R current for the condition studied are also in agreement

  4. Mesoscale hybrid calibration artifact

    DOEpatents

    Tran, Hy D.; Claudet, Andre A.; Oliver, Andrew D.

    2010-09-07

    A mesoscale calibration artifact, also called a hybrid artifact, suitable for hybrid dimensional measurement and the method for make the artifact. The hybrid artifact has structural characteristics that make it suitable for dimensional measurement in both vision-based systems and touch-probe-based systems. The hybrid artifact employs the intersection of bulk-micromachined planes to fabricate edges that are sharp to the nanometer level and intersecting planes with crystal-lattice-defined angles.

  5. Detection of the Light Produced in Scintillating Tiles by Means of a Wls Fiber and AN Avalanche Photodiode Working in the Geiger Mode

    NASA Astrophysics Data System (ADS)

    Akindinov, A.; Mal'Kevich, D.; Martemiyanov, A.; Smirnitsky, A.; Voloshin, K.; Grigoriev, E.; Golovin, V.; Bondarenko, G.

    2004-07-01

    Plates of an organic scintillator BC408, 50 × 50 × 5 mm3, with a wavelength-shifting (WLS) fiber Kuraray Y11, embedded in circular grooves inside the plastic, were used in combination with 1 mm2 avalanche photodiodes working in the Geiger mode (APDg or MRS-APD). Beam tests with minimum ionizing particles (MIP), performed at the ITEP synchrotron, have shown high detection efficiencies (about 13 photo-electrons).

  6. Single-photon counting for the 1300-1600-nm range by use of peltier-cooled and passively quenched InGaAs avalanche photodiodes.

    PubMed

    Rarity, J G; Wall, T E; Ridley, K D; Owens, P C; Tapster, P R

    2000-12-20

    We evaluate the performance of various commercially available InGaAs/InP avalanche photodiodes for photon counting in the infrared at temperatures that can be reached by Peltier cooling. We find that dark count rates are high, and this can partially saturate devices before optimum performance is achieved. At low temperatures the dark count rate rises because of a strong contribution from correlated afterpulses. We discuss ways of suppressing these afterpulses for different photon-counting applications.

  7. Hybrid armature projectile

    DOEpatents

    Hawke, Ronald S.; Asay, James R.; Hall, Clint A.; Konrad, Carl H.; Sauve, Gerald L.; Shahinpoor, Mohsen; Susoeff, Allan R.

    1993-01-01

    A projectile for a railgun that uses a hybrid armature and provides a seed block around part of the outer surface of the projectile to seed the hybrid plasma brush. In addition, the hybrid armature is continuously vaporized to replenish plasma in a plasma armature to provide a tandem armature and provides a unique ridge and groove to reduce plasama blowby.

  8. Intraply Hybrid Composite Design

    NASA Technical Reports Server (NTRS)

    Chamis, C. C.; Sinclair, J. H.

    1986-01-01

    Several theoretical approaches combined in program. Intraply hybrid composites investigated theoretically and experimentally at Lewis Research Center. Theories developed during investigations and corroborated by attendant experiments used to develop computer program identified as INHYD (Intraply Hybrid Composite Design). INHYD includes several composites micromechanics theories, intraply hybrid composite theories, and integrated hygrothermomechanical theory. Equations from theories used by program as appropriate for user's specific applications.

  9. Hybrid armature projectile

    DOEpatents

    Hawke, R.S.; Asay, J.R.; Hall, C.A.; Konrad, C.H.; Sauve, G.L.; Shahinpoor, M.; Susoeff, A.R.

    1993-03-02

    A projectile for a railgun that uses a hybrid armature and provides a seed block around part of the outer surface of the projectile to seed the hybrid plasma brush. In addition, the hybrid armature is continuously vaporized to replenish plasma in a plasma armature to provide a tandem armature and provides a unique ridge and groove to reduce plasma blowby.

  10. Hybrid quantum information processing

    SciTech Connect

    Furusawa, Akira

    2014-12-04

    I will briefly explain the definition and advantage of hybrid quantum information processing, which is hybridization of qubit and continuous-variable technologies. The final goal would be realization of universal gate sets both for qubit and continuous-variable quantum information processing with the hybrid technologies. For that purpose, qubit teleportation with a continuousvariable teleporter is one of the most important ingredients.

  11. Homoploid hybrid expectations

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Homoploid hybrid speciation occurs when a stable, fertile, and reproductively isolated lineage results from hybridization between two distinct species without a change in ploidy level. Reproductive isolation between a homoploid hybrid species and its parents is generally attained via chromosomal re...

  12. A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode

    SciTech Connect

    Vanyushin, I. V. Gergel, V. A.; Gontar', V. M.; Zimoglyad, V. A.; Tishin, Yu. I.; Kholodnov, V. A. Shcheleva, I. M.

    2007-06-15

    A new discrete theoretical model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode is developed. It is shown that the spreading resistance in the substrate profoundly affects both the amplitude of a single-photon electrical pulse and the possibility of attaining the steady-state form of the avalanche breakdown excluding the Geiger mode of the photodiode's operation. The model is employed to interpret the experimental data obtained using test single-photon cells of avalanche photodiodes fabricated on the basis of the 0.25-{mu}m silicon technology with the use of deep implantation to form the region of avalanche multiplication for the charge carriers. Excellent functional properties of the studied type of the single-photon (Geiger) cell are noted. A typical amplitude characteristic of the cell for optical radiation with the wavelength {lambda} = 0.56 {mu}m in the irradiance range of 10{sup -3}-10{sup 2} lx is presented; this characteristic indicates that the quantum efficiency of photoconversion is extremely high.

  13. High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

    PubMed Central

    Li, Chong; Xue, ChunLai; Liu, Zhi; Cong, Hui; Cheng, Buwen; Hu, Zonghai; Guo, Xia; Liu, Wuming

    2016-01-01

    Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effect is overcome and the thermal effects is suppressed. High current is beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in many applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. When the transmission of the monolayer anti-reflection coating was maximum, the maximum absorption efficiency of the devices was 1.45 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode had a dominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25% thinner Ge absorption layer. PMID:27279426

  14. High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

    NASA Astrophysics Data System (ADS)

    Li, Chong; Xue, Chunlai; Liu, Zhi; Cong, Hui; Cheng, Buwen; Hu, Zonghai; Guo, Xia; Liu, Wuming

    2016-06-01

    Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effect is overcome and the thermal effects is suppressed. High current is beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in many applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. When the transmission of the monolayer anti-reflection coating was maximum, the maximum absorption efficiency of the devices was 1.45 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode had a dominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25% thinner Ge absorption layer.

  15. Analysis and Enhancement of Low-Light-Level Performance of Photodiode-Type CMOS Active Pixel Images Operated with Sub-Threshold Reset

    NASA Technical Reports Server (NTRS)

    Pain, Bedabrata; Yang, Guang; Ortiz, Monico; Wrigley, Christopher; Hancock, Bruce; Cunningham, Thomas

    2000-01-01

    Noise in photodiode-type CMOS active pixel sensors (APS) is primarily due to the reset (kTC) noise at the sense node, since it is difficult to implement in-pixel correlated double sampling for a 2-D array. Signal integrated on the photodiode sense node (SENSE) is calculated by measuring difference between the voltage on the column bus (COL) - before and after the reset (RST) is pulsed. Lower than kTC noise can be achieved with photodiode-type pixels by employing "softreset" technique. Soft-reset refers to resetting with both drain and gate of the n-channel reset transistor kept at the same potential, causing the sense node to be reset using sub-threshold MOSFET current. However, lowering of noise is achieved only at the expense higher image lag and low-light-level non-linearity. In this paper, we present an analysis to explain the noise behavior, show evidence of degraded performance under low-light levels, and describe new pixels that eliminate non-linearity and lag without compromising noise.

  16. Quantitative analysis and chromatographic fingerprinting for the quality evaluation of Forsythia suspensa extract by HPLC coupled with photodiode array detector.

    PubMed

    Xia, Yonggang; Yang, Bingyou; Wang, Qiuhong; Liang, Jun; Wei, Youhe; Yu, Hedan; Zhang, Qingbo; Kuang, Haixue

    2009-12-01

    A simple and reproducible HPLC-photodiode array detector method has been described for evaluating and controlling quality of Forsythia suspensa extract (FSE). First, by analysis of chromatographic fingerprints, the similarities of chromatograms of FSE samples from the same pharmaceutical company exceeded 0.999, 0.997 and 0.960, respectively, although they were much lower from different pharmaceutical companies. Second, by further comparing many batches of extract chromatograph charts with the corresponding reference herb materials, the "common peaks" 3, 5, 7 and 10 were defined as "marker peaks", which were identified as (+)-pinoresinol-beta-D-glucoside, forsythiaside, phillyrin and phillygenin, respectively. Third, four "marker peaks" were simultaneously determined based on fingerprint chromatogram for further controlling the quality of FSE quantitatively. Namely, the newly developed method was successfully applied to analyze 38 batches of FSE samples supplied by three pharmaceutical factories, which showed acceptable linearity, intra-day precision (RSD<2.76%), inter-day precision (RSD<3.43%) and the average recovery rates in the range of (95.38+/-2.96)% to (101.60+/-3.08)%. At last, hierarchical clustering analysis and Bayes discriminant analysis statistical methods were used to classify and differentiate the 38 FSE samples to provide the basis for guiding reasonable use of FSE and controlling its quality better.

  17. A 25-Gbps high-sensitivity optical receiver with 10-Gbps photodiode using inductive input coupling for optical interconnects

    NASA Astrophysics Data System (ADS)

    Oku, Hideki; Narita, Kiyomi; Shiraishi, Takashi; Ide, Satoshi; Tanaka, Kazuhiro

    2012-01-01

    A 25-Gbps high-sensitivity optical receiver with a 10-Gbps photodiode (PD) using inductive input coupling has been demonstrated for optical interconnects. We introduced the inductive input coupling technique to achieve the 25-Gbps optical receiver using a 10-Gbps PD. We implemented an input inductor (Lin) between the PD and trans-impedance amplifier (TIA), and optimized inductance to enhance the bandwidth and reduce the input referred noise current through simulation with the RF PD-model. Near the resonance frequency of the tank circuit formed by PD capacitance, Lin, and TIA input capacitance, the PD photo-current through Lin into the TIA is enhanced. This resonance has the effects of enhancing the bandwidth at TIA input and reducing the input equivalent value of the noise current from TIA. We fabricated the 25-Gbps optical receiver with the 10-Gbps PD using an inductive input coupling technique. Due to the application of an inductor, the receiver bandwidth is enhanced from 10 GHz to 14.2 GHz. Thanks to this wide-band and low-noise performance, we were able to improve the sensitivity at an error rate of 1E-12 from non-error-free to -6.5 dBm. These results indicate that our technique is promising for cost-effective optical interconnects.

  18. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    NASA Astrophysics Data System (ADS)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  19. Realizing broad-bandwidth visible wavelength photodiode based on solution-processed ZnPc/PC71BM dyad

    NASA Astrophysics Data System (ADS)

    Zafar, Qayyum; Fatima, Noshin; Karimov, Khasan S.; Ahmed, Muhammad M.; Sulaiman, Khaulah

    2017-02-01

    Herein, we demonstrate a solution-processed visible wavelength organic photodiode (OPD) using donor/acceptor dyad of zinc phthalocyanine (ZnPc) and [6,6]-phenyl-C71-butyric-acid methyl ester (PC71BM), respectively. The synergic absorption profiles of both ZnPc and PC71BM moieties have been exploited to realize broader (350 and 800 nm) and consistent absorption spectrum of the photoactive film. The optimum loading ratio (by volume) of D/A dyad has been estimated to be 1:0.8, via quenching phenomenon in ZnPc photoluminescence spectrum. The performance of the OPD has been evaluated by detecting the photocurrent density with respect to varied illumination levels (0-150 mW/cm2) of impinging light at different reverse bias conditions. Under identical reverse bias mode, the photocurrent density has shown significant upsurge as the incident intensity of light is increased; ultimately leading to the significantly higher responsivity (162.4 μA/W) of the fabricated diode. The light to dark current density ratio (Jph/Jd) of the device at 3 V reverse bias has been calculated to be ∼20.12. The transient photocurrent density response of the fabricated OPD has also been characterized at -4 V operational bias under switch ON/OFF illumination. The measured response and recovery time for the fabricated OPD are ∼200 and 300 ms, respectively.

  20. Facile fabrication of n-ZnO nanorods/p-Cu2O heterojunction and its photodiode property

    NASA Astrophysics Data System (ADS)

    Kathalingam, A.; Vikraman, Dhanasekaran; Kim, Hyun-Seok; Park, Hui Joon

    2017-04-01

    This report presents the fabrication and characterization of n-ZnO nanorods/p-Cu2O hetrojunction photo-diode. The ZnO nanorods (NRs) were deposited onto electrodeposited Cu2O thin film by hydrothermal method. The structural, morphological and optical properties of ZnO NRs and Cu2O films were studied by X-ray diffraction, scanning electronic microscopy, UV-Vis spectrophotometer, respectively. XRD patterns revealed that the as-grown films were highly crystalline nature with strong predominant orientation of (111) and (002) lattices corresponding to Cu2O and ZnO NRs, respectively. Current-voltage (I-V) characteristic of n-ZnONRs/p-Cu2O structure confirmed the formation of heterojunction exhibiting diode-like rectifying nature. It showed enhanced conversion of UV light, which indicates the suitability of the simple and low-cost n-ZnO NRs/p-Cu2O heterojunction device for optoelectronic applications. The sandwich type ITO/n-ZnO NRs/p-Cu2O/ITO structure is quite novel approach for the efficient and complete collection of carriers in nanorods incorporated devices.

  1. Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes

    SciTech Connect

    Wang, Xiaodong; Pan, Ming; Hou, Liwei; Xie, Wei; Hu, Weida Xu, Jintong; Li, Xiangyang; Chen, Xiaoshuang Lu, Wei

    2014-01-07

    The gain and photoresponse characteristics have been numerically studied for back-illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes (APDs). The parameters of fundamental models are calibrated by simultaneously comparing the simulated dark and light current characteristics with the experimental results. Effects of environmental temperatures and device dimensions on gain characteristics have been investigated, and a method to achieve the optimum thickness of charge layer is obtained. The dependence of gain characteristics and breakdown voltage on the doping concentration of the charge layer is also studied in detail to get the optimal charge layer. The bias-dependent spectral responsivity and quantum efficiency are then presented to study the photoresponse mechanisms inside SAM GaN APDs. It is found the responsivity peak red-shifts at first due to the Franz-Keldysh effect and then blue-shifts due to the reach-through effect of the absorption layer. Finally, a new SAM GaN/AlGaN heterojunction APD structure is proposed for optimizing SAM GaN APDs.

  2. Word timing recovery in direct detection optical PPM communication systems with avalanche photodiodes using a phase lock loop

    NASA Technical Reports Server (NTRS)

    Sun, Xiaoli; Davidson, Frederic M.

    1990-01-01

    A technique for word timing recovery in a direct-detection optical PPM communication system is described. It tracks on back-to-back pulse pairs in the received random PPM data sequences with the use of a phase locked loop. The experimental system consisted of an 833-nm AlGaAs laser diode transmitter and a silicon avalanche photodiode photodetector, and it used Q = 4 PPM signaling at source data rate 25 Mb/s. The mathematical model developed to describe system performance is shown to be in good agreement with the experimental measurements. Use of this recovered PPM word clock with a slot clock recovery system caused no measurable penalty in receiver sensitivity. The completely self-synchronized receiver was capable of acquiring and maintaining both slot and word synchronizations for input optical signal levels as low as 20 average detected photons per information bit. The receiver achieved a bit error probability of 10 to the -6th at less than 60 average detected photons per information bit.

  3. Single-step metal-organic vapor-phase diffusion for low-dark-current planar-type avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Jun, Dong-Hwan; Jeong, Hae Yong; Kim, Youngjo; Shin, Chan-Soo; Park, Kyung Ho; Park, Won-Kyu; Kim, Min-Su; Kim, Sangin; Han, Sang Wook; Moon, Sung

    2016-10-01

    In this paper, a p-type diffusion process based literally on single-step metal-organic vapor-phase diffusion (MOVPD) employing diethyl zinc as the diffusion source in combination with the recessetching technique is developed to improve the dark-current characteristics of planar-type avalanche photodiodes (APDs). The developed single-step MOVPD process exhibits on excellent linear relationship between the diffusion depth and the square root of the diffusion time, which mainly results from maintaining constant source diffusion. The single-step MOVPD process without any additional thermal activation process achieves a surface doping concentration of 1.9 × 1018 cm -3, which is sufficient to form ohmic contact. The measured diffusion profiles of the APDs clearly reveal the presence of a two-dimensional diffusion front formed by the recess-etched and guard-ring regions. The impact of this p-type diffusion process on the performance of the APD devices has also been demonstrated by exhibiting improved dark-current characteristics for the fabricated APDs.

  4. Identification of chlorophylls and carotenoids in major teas by high-performance liquid chromatography with photodiode array detection.

    PubMed

    Suzuki, Yasuyo; Shioi, Yuzo

    2003-08-27

    The separation and identification of pigments, chlorophylls, and carotenoids of seven teas and fresh leaf of tea (Camellia sinensis) by high-performance liquid chromatography (HPLC) are described. HPLC was carried out using a Symmetry C(8) column with a photodiode array detector. Pigments were eluted with a binary gradient of aqueous pyridine solution at a flow rate of 1.0 mL/min at 25 degrees C. HPLC analyses achieved the separation of more than 100 pigment peaks, and 79 pigment species, 41 chlorophylls, and 38 carotenoids were detected. The presence of degraded chlorophylls was a common feature, and the number and the variety of pigments differed with tea species. Generally, the numbers of chlorophyll species tended to increase with processing steps, while carotenoid species were decreased, especially by heating. Particularly in green teas, a change of carotenoid structure, conversion of violaxanthin to auroxanthin, occurred. In hot water extracts of teas, both chlorophylls and carotenoids were also detected, but the concentration of chlorophylls was less than 2% as compared with acetone extracts. The pigment compositions were compared between tea species, and they are discussed in terms of the differences in their manufacturing processes.

  5. Determination of total phthalates in edible oils by high-performance liquid chromatography coupled with photodiode array detection.

    PubMed

    Xie, Qilong; Sun, Dekui; Han, Yangying; Jia, Litao; Hou, Bo; Liu, Shuhui; Li, Debao

    2016-03-01

    The previously reported procedure for the determination of the total phthalate in fatty food involved the extraction of phthalates using chloroform/methanol followed by the removal of the solvents before alkaline hydrolysis requiring 20 h and derivatization of phthalic acid. In this study, a phase-transfer catalyst (tetrabutylammonium chloride) was used in the liquid-liquid heterogeneous hydrolysis of phthalates in oil matrix shortening the reaction time to within 25 min. The resulting phthalic acid in the hydrolysate was extracted by a novel molecular complex based dispersive liquid-liquid microextraction method coupled with back-extraction before high-performance liquid chromatography coupled with photodiode array detection. Under the optimal experimental conditions, the linearity of the method was in the range of 0.5-12 nmol/g with the correlation coefficients (r) >0.997. The detection limit (S/N = 3) was 0.11 nmol/g. Intraday and interday repeatability values expressed as relative standard deviation were 3.9 and 7.1%, respectively. The recovery rates ranged from 82.4 to 99.0%. The developed method was successfully applied for the analysis of total phthalate in seven edible oils.

  6. The electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/ p-type silicon junctions

    NASA Astrophysics Data System (ADS)

    Çavaş, M.; Yakuphanoğlu, F.; Karataş, Ş.

    2017-04-01

    Gallium doped cadmium-oxide (CdO: Ga) thin films were successfully deposited by sol-gel spin coating method on p-type Si substrate. The electrical properties of the photodiode based on nanostructure Ga doped n-CdO/ p-Si junctions were investigated. The current-voltage ( I- V) characteristics of the structure were investigated under various light intensity and dark. It was observed that generated photocurrent of the Au/ n-CdO/p-Si junctions depended on light intensity. The capacitance-voltage and conductance-voltage measurements were carried out for this diode in the frequency range between 100 and 1000 kHz at room temperature by steps of 100 kHz. The capacitance decreased with increasing frequency due to a continuous distribution of the interface states. These results suggested that the Au/ n-CdO/ p-Si Schottky junctions could be utilized as a photosensor. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C- V and G/ω-V measurements and plotted as functions of voltage and frequency. The distribution profile of R S - V gave a peak in the depletion region at low frequencies and disappeared with increasing frequencies.

  7. Wurtzite Zn1-y(MgxCd1-x)yO quaternary systems for photodiodes in visible spectral range

    NASA Astrophysics Data System (ADS)

    Nieda, Yoshiaki; Suzuki, Mari; Nakamura, Atsushi; Temmyo, Jiro; Tabares, Gema; Kurtz, Alejandro; Lopez, Manuel; Ulloa, José María; Hierro, Adrian; Muñoz, Elías

    2016-09-01

    We investigated the optical bandgap engineering of ZnO based quaternary alloy films of wurtzite Zn1-y(MgxCd1-x)yO for photodiodes in visible spectral range. Quaternary alloy films were successfully synthesized by remote-plasma enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The wurtzite alloy system has an optical bandgap energy between 2.16 eV and 3.25 eV, which was controlled by the flow ratio of metalorganic sources. The crystal structure and composition was analyzed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). This revealed that carrier compensation effects by alloying with MgO in Zn1-xCdxO system decreases carrier concentration. Strong compensation effects were observed in the bandgap range of Zn1-y(MgxCd1-x)yO between 3.0 eV to 3.25 eV and the carrier concentration decreased to 1015-1018 cm-3. Schottky diodes of PEDOT: PSS/Zn1-y(MgxCd1-y)yO with optical bandgaps in the visible spectral range were fabricated to confirm the viability of photovoltaic applications. The diodes performed photovoltaic characteristics under a Xe-Hg lamp illumination through Schottky junctions. The photoresponse spectra showed a photosensitivity with cutoff energy of 2.23 eV and peak energy of 2.90 eV at 0 V biasing.

  8. Organ dose and effective dose estimation in paediatric chest radiographic examinations by using pin silicon photodiode dosemeters.

    PubMed

    Kawasaki, Toshio; Aoyama, Takahiko; Yamauchi-Kawaura, Chiyo; Fujii, Keisuke; Koyama, Shuji

    2013-01-01

    Organ and effective doses during paediatric chest radiographic examination were investigated for various tube voltages between 60 and 110 kV at a constant milliampere-second value and focus-to-film distance by using an in-phantom dose measuring system and a Monte Carlo (MC) simulation software (PCXMC), where the former was composed of 32 photodiode dosemeters embedded in various tissue and organ sites within a 6-y-old child anthropomorphic phantom. Lung doses obtained ranged from 0.010 to 0.066 mGy and effective doses from 0.004 to 0.025 mSv, where these doses varied by a factor of 6 with the change in the tube voltage. Effective doses obtained using the MC simulation software agreed with those obtained using the dose measuring system within 23 %, revealing the usefulness of PCXMC software for evaluating effective doses. The present study would provide helpful dose data for the selection of technical parameters in paediatric chest radiography in Japan.

  9. Measurement of ²²²Rn diffusion through sandy soil with solar cells photodiodes as the detector.

    PubMed

    Shitrit, Y; Dody, A; Alfassi, Z B; Berant, Z

    2012-02-01

    An experimental system was developed to study the diffusion rate of radon (²²²Rn) gas through porous media as a function of soil porosity/grain size and soil water content. Columns with different grain sizes, soil water content and soil depths were used. The system used solar cells photodiodes as alpha (α) detectors. This new detector is highly efficient and low cost compared to other known detectors. Soil water content was found to be the most dominant factor affecting the ²²²Rn diffusion rate. A maximum diffusion rate value of (6.5 ± 0.07) × 10⁻⁶ m²/s was found in dry conditions. The minimum diffusion value of less than (3.9 ± 0.14) × 10⁻⁷ m²/s was found in 2% soil water content. The experimental results were compared with theoretical calculations done with the "GREEN equation". Two discrepancies were observed: the time to equilibrium state in the measurements was longer compare to the calculated values and the α count rates were lower in the experiment compared with the theoretical calculations. These results can be explained by the differences in the system geometry.

  10. Comparison of magnetic resonance imaging-compatible optical detectors for in-magnet tissue spectroscopy: photodiodes versus silicon photomultipliers.

    PubMed

    El-Ghussein, Fadi; Jiang, Shudong; Pogue, Brian W; Paulsen, Keith D

    2014-01-01

    Tissue spectroscopy inside the magnetic resonance imaging (MRI) system adds a significant value by measuring fast vascular hemoglobin responses or completing spectroscopic identification of diagnostically relevant molecules. Advances in this type of spectroscopy instrumentation have largely focused on fiber coupling into and out of the MRI; however, nonmagnetic detectors can now be placed inside the scanner with signal amplification performed remotely to the high field environment for optimized light detection. In this study, the two possible detector options, such as silicon photodiodes (PD) and silicon photomultipliers (SiPM), were systematically examined for dynamic range and wavelength performance. Results show that PDs offer 10⁸(160 dB) dynamic range with sensitivity down to 1 pW, whereas SiPMs have 10⁷(140 dB) dynamic range and sensitivity down to 10 pW. A second major difference is the spectral sensitivity of the two detectors. Here, wavelengths in the 940 nm range are efficiently captured by PDs (but not SiPMs), likely making them the superior choice for broadband spectroscopy guided by MRI.

  11. Study of flavonoids of Sechium edule (Jacq) Swartz (Cucurbitaceae) different edible organs by liquid chromatography photodiode array mass spectrometry.

    PubMed

    Siciliano, Tiziana; De Tommasi, Nunziatina; Morelli, Ivano; Braca, Alessandra

    2004-10-20

    A liquid chromatography-mass spectrometry (LC-MS)-based method was developed for the characterization of flavonoids from Sechium edule (Jacq) Swartz (Cucurbitaceae) edible organs, a plant cultivated since pre-Colombian times in Mexico where the fruit is called chayote. Chayote is used for human consumption in many countries; in addition to the fruits, stems, leaves and the tuberous part of the roots are also eaten. Eight flavonoids, including three C-glycosyl and five O-glycosyl flavones, were detected, characterized by nuclear magnetic resonance spectroscopic data, and quantified in roots, leaves, stems, and fruits of the plant by LC-photodiode array-MS. The aglycone moieties are represented by apigenin and luteolin, while the sugar units are glucose, apiose, and rhamnose. The results indicated that the highest total amount of flavonoids was in the leaves (35.0 mg/10 g of dried part), followed by roots (30.5 mg/10 g), and finally by stems (19.3 mg/10 g).

  12. Fingerprint Analysis of Desmodium Triquetrum L. Based on Ultra Performance Liquid Chromatography with Photodiode Array Detector Combined with Chemometrics Methods.

    PubMed

    Zhang, Meiling; Zhao, Cui; Liang, Xianrui; Ying, Yin; Han, Bing; Yang, Bo; Jiang, Cheng

    2016-01-01

    A fingerprinting approach was developed by means of ultra high-performance liquid chromatography with photodiode array detector for the quality control of Desmodium triquetrum L., an herbal medicine widely used for clinical purposes. Ten batches of raw material samples of D. triquetrum were collected from different regions of China. All UPLC analyses were carried out on a Waters ACQUITY UPLC BEH shield RP18 column (2.1 × 50 mm, 1.7 µm particle size) at 60°C, with a gradient mobile phase composed of 0.1% aqueous formic acid and acetonitrile at a flow rate of 0.45 mL/min. The method validation results demonstrated the developed method possessing desirable reproducibility, efficiency, and allowing fingerprint analysis in one chromatographic run within 13 min. The quality assessment was achieved by using chemometrics methods including similarity analysis, hierarchical clustering analysis and principal component analysis. The developed method can be used for further quality control of D. triquetrum.

  13. Performance Dependences of Multiplication Layer Thickness for InP/InGaAs Avalanche Photodiodes Based on Time Domain Modeling

    NASA Technical Reports Server (NTRS)

    Xiao, Yegao; Bhat, Ishwara; Abedin, M. Nurul

    2005-01-01

    InP/InGaAs avalanche photodiodes (APDs) are being widely utilized in optical receivers for modern long haul and high bit-rate optical fiber communication systems. The separate absorption, grading, charge, and multiplication (SAGCM) structure is an important design consideration for APDs with high performance characteristics. Time domain modeling techniques have been previously developed to provide better understanding and optimize design issues by saving time and cost for the APD research and development. In this work, performance dependences on multiplication layer thickness have been investigated by time domain modeling. These performance characteristics include breakdown field and breakdown voltage, multiplication gain, excess noise factor, frequency response and bandwidth etc. The simulations are performed versus various multiplication layer thicknesses with certain fixed values for the areal charge sheet density whereas the values for the other structure and material parameters are kept unchanged. The frequency response is obtained from the impulse response by fast Fourier transformation. The modeling results are presented and discussed, and design considerations, especially for high speed operation at 10 Gbit/s, are further analyzed.

  14. The electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/p-type silicon junctions

    NASA Astrophysics Data System (ADS)

    Çavaş, M.; Yakuphanoğlu, F.; Karataş, Ş.

    2017-01-01

    Gallium doped cadmium-oxide (CdO: Ga) thin films were successfully deposited by sol-gel spin coating method on p-type Si substrate. The electrical properties of the photodiode based on nanostructure Ga doped n-CdO/p-Si junctions were investigated. The current-voltage (I-V) characteristics of the structure were investigated under various light intensity and dark. It was observed that generated photocurrent of the Au/n-CdO/p-Si junctions depended on light intensity. The capacitance-voltage and conductance-voltage measurements were carried out for this diode in the frequency range between 100 and 1000 kHz at room temperature by steps of 100 kHz. The capacitance decreased with increasing frequency due to a continuous distribution of the interface states. These results suggested that the Au/n-CdO/p-Si Schottky junctions could be utilized as a photosensor. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C-V and G/ω-V measurements and plotted as functions of voltage and frequency. The distribution profile of R S -V gave a peak in the depletion region at low frequencies and disappeared with increasing frequencies.

  15. Comparison of magnetic resonance imaging-compatible optical detectors for in-magnet tissue spectroscopy: photodiodes versus silicon photomultipliers

    PubMed Central

    El-Ghussein, Fadi; Jiang, Shudong; Pogue, Brian W.; Paulsen, Keith D.

    2014-01-01

    Abstract. Tissue spectroscopy inside the magnetic resonance imaging (MRI) system adds a significant value by measuring fast vascular hemoglobin responses or completing spectroscopic identification of diagnostically relevant molecules. Advances in this type of spectroscopy instrumentation have largely focused on fiber coupling into and out of the MRI; however, nonmagnetic detectors can now be placed inside the scanner with signal amplification performed remotely to the high field environment for optimized light detection. In this study, the two possible detector options, such as silicon photodiodes (PD) and silicon photomultipliers (SiPM), were systematically examined for dynamic range and wavelength performance. Results show that PDs offer 108 (160 dB) dynamic range with sensitivity down to 1 pW, whereas SiPMs have 107 (140 dB) dynamic range and sensitivity down to 10 pW. A second major difference is the spectral sensitivity of the two detectors. Here, wavelengths in the 940 nm range are efficiently captured by PDs (but not SiPMs), likely making them the superior choice for broadband spectroscopy guided by MRI. PMID:25006986

  16. A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

    NASA Astrophysics Data System (ADS)

    Zheng, Jiyuan; Wang, Lai; Wu, Xingzhao; Hao, Zhibiao; Sun, Changzheng; Xiong, Bing; Luo, Yi; Han, Yanjun; Wang, Jian; Li, Hongtao; Brault, Julien; Matta, Samuel; Khalfioui, Mohamed Al; Yan, Jianchang; Wei, Tongbo; Zhang, Yun; Wang, Junxi

    2016-12-01

    Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace the bulky and fragile photomultiplier tube (PMT) for weak light detection. However, the performance of most available APDs is barely satisfactory compared to that of the PMTs because of inter-valley scattering. Here, we demonstrate a PMT-like APD based on GaN/AlN periodically stacked-structure (PSS), in which the electrons encounter a much less inter-valley scattering during transport than holes. Uni-directional avalanche takes place with a high efficiency. According to our simulations based on a PSS with GaN (10 nm)/AlN (10 nm) in each period, the probability for electrons to trigger ionization in each cycle can reach as high as 80%, while that for holes is only 4%. A record high and stable gain (104) with a low ionization coefficient ratio of 0.05 is demonstrated under a constant bias in a prototype device.

  17. Design and performance testing of an avalanche photodiode receiver with multiplication gain control algorithm for intersatellite laser communication

    NASA Astrophysics Data System (ADS)

    Yu, Xiaonan; Tong, Shoufeng; Dong, Yan; Song, Yansong; Hao, Shicong; Lu, Jing

    2016-06-01

    An avalanche photodiode (APD) receiver for intersatellite laser communication links is proposed and its performance is experimentally demonstrated. In the proposed system, a series of analog circuits are used not only to adjust the temperature and control the bias voltage but also to monitor the current and recover the clock from the communication data. In addition, the temperature compensation and multiplication gain control algorithm are embedded in the microcontroller to improve the performance of the receiver. As shown in the experiment, with the change of communication rate from 10 to 2000 Mbps, the detection sensitivity of the APD receiver varies from -47 to -34 dBm. Moreover, due to the existence of the multiplication gain control algorithm, the dynamic range of the APD receiver is effectively improved, while the dynamic range at 10, 100, and 1000 Mbps is 38.7, 37.7, and 32.8 dB, respectively. As a result, the experimental results agree well with the theoretical predictions, and the receiver will improve the flexibility of the intersatellite links without increasing the cost.

  18. Novel wearable-type biometric devices based on skin tissue optics with multispectral LED–photodiode matrix

    NASA Astrophysics Data System (ADS)

    Jo, Young Chang; Kim, Hae Na; Kang, Jae Hwan; Hong, Hyuck Ki; Choi, Yeon Shik; Jung, Suk Won; Kim, Sung Phil

    2017-04-01

    In this study, we examined the possibility of using a multispectral skin photomatrix (MSP) module as a novel biometric device. The MSP device measures optical patterns of the wrist skin tissue. Optical patterns consist of 2 × 8 photocurrent intensities of photodiode arrays, which are generated by optical transmission and diffuse reflection of photons from LED light sources with variable wavelengths into the wrist skin tissue. Optical patterns detected by the MSP device provide information on both the surface and subsurface characteristics of the human skin tissue. We found that in the 21 subjects we studied, they showed their unique characteristics, as determined using several wavelengths of light. The experimental results show that the best personal identification accuracy can be acquired using a combination of infrared light and yellow light. This novel biometric device, the MSP module, exhibited an excellent false acceptance rate (FAR) of 0.3% and a false rejection rate (FRR) of 0.0%, which are better than those of commercialized biometric devices such as a fingerprint biometric system. From these experimental results, we found that people exhibit unique optical patterns of their inner-wrist skin tissue and this uniqueness could be used for developing novel high-accuracy personal identification devices.

  19. Hybrid songbirds employ intermediate routes in a migratory divide.

    PubMed

    Delmore, Kira E; Irwin, Darren E

    2014-10-01

    Migratory divides are contact zones between populations that use different routes to navigate around unsuitable areas on seasonal migration. Hybrids in divides have been predicted to employ intermediate and potentially inferior routes. We provide the first direct test of this hypothesis, using light-level geolocators to track birds breeding in a hybrid zone between Swainson's thrushes in western Canada. Compared to parental forms, hybrids exhibited increased variability in their migratory routes, with some using intermediate routes that crossed arid and mountainous regions, and some using the same routes as one parental group on fall migration and the other on spring migration. Hybrids also tended to use geographically intermediate wintering sites. Analysis of genetic variation across the hybrid zone suggests moderately strong selection against hybrids. These results indicate that seasonal migratory behaviour might be a source of selection against hybrids, supporting a possible role for migration in speciation.

  20. A novel JFET readout structure applicable for pinned and lateral drift-field photodiodes

    NASA Astrophysics Data System (ADS)

    Süss, Andreas; Hosticka, Bedrich J.

    2012-04-01

    Enhancement of the dynamic range of photodetectors used in advanced image sensors such as time-of-flight sensors or image sensors for automotive applications is a major research topic. In this paper an improved unipolar readout structure is presented, that is superior to the widely employed source follower readout implemented by enhancement MOSFETs. It yields a high output voltage swing and low noise, while requiring no additional processing steps. The readout structure is consisting of a low-noise JFET whose gates are formed by a floating diffusion, thus preserving in-pixel accumulation capability - which additionally improves noise performance. This structure outperforms a simple in-pixel implementation of a JFET and a photodetector in terms of the necessary area consumption, thus improving fill factor. For pixels with a pitch of several microns this readout structure is a good trade-off between area, output voltage swing and, most important, noise performance. Furthermore, since only a ground connection is needed for application, fill-factor and power-grid disturbances like DC-voltage drop can be additionally improved.