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Sample records for arf immersion lithography

  1. Defectivity reduction studies for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Matsunaga, Kentaro; Kondoh, Takehiro; Kato, Hirokazu; Kobayashi, Yuuji; Hayasaki, Kei; Ito, Shinichi; Yoshida, Akira; Shimura, Satoru; Kawasaki, Tetsu; Kyoda, Hideharu

    2007-03-01

    Immersion lithography is widely expected to meet the manufacturing requirements of future device nodes. A critical development in immersion lithography has been the construction of a defect-free process. Two years ago, the authors evaluated the impact of water droplets made experimentally on exposed resist films and /or topcoat. (1) The results showed that the marks of drying water droplet called watermarks became pattern defects with T-top profile. In the case that water droplets were removed by drying them, formation of the defects was prevented. Post-exposure rinse process to remove water droplets also prevented formation of the defects. In the present work, the authors evaluated the effect of pre- and post-exposure rinse processes on hp 55nm line and space pattern with Spin Rinse Process Station (SRS) and Post Immersion Rinse Process Station (PIR) modules on an inline lithography cluster with the Tokyo Electron Ltd. CLEAN TRACK TM LITHIUS TM i+ and ASML TWINSCAN XT:1700Fi , 193nm immersion scanner. It was found that total defectivity is decreased by pre- and post-exposure rinse. In particular, bridge defects and large bridge defects were decreased by pre- and post-exposure rinse. Pre- and post-exposure rinse processes are very effective to reduce the bridge and large bridge defects of immersion lithography.

  2. Development of high-transmittance phase-shifting mask for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Ahn, Won-suk; Seo, Hwan-Seok; Bang, Ju-Mi; Kim, Ji-Young; Song, Jae-Min; Seung, Byoung-Hoon; Kim, Hee-Bom; Jeon, Chan-Uk

    2015-07-01

    A new PSM using high transmittance is developed to overcome patterning process limits in ArF immersion lithography. We optimized mask structure, materials, and film thicknesses for patterning process. A new material for phase-shifter is applied to the HT-PSM to exhibit higher transmittance in ArF wavelengths and the thickness of the new material is thinner than that of the conventional 6% phase-shifter (MoSiON). A new blank structure using a MoSi shading layer with double Cr hardmasks (HM) is developed and suggested for the HTPSM process. Double HM blank stacks enable the HT-PSM to adopt thin PR process for resolution enhancement in mask process. The first Cr on the MoSi is utilized as a HM to etch MoSi shading layer, an adhesion layer for PR process, and also a capping layer to protect blind area during MoSi and phase-shifter etching. In contrast, the role of the second Cr between MoSi and phase-shifter is an etch stopper for MoSi and a HM to etch phase-shifter at the same time. However, Double HM process has some problems, such as first Cr removal during second Cr etching and complex process steps. To solve the Cr removal issues, we evaluated various Cr layers which have different etchrates and compositions. According to the evaluations, we optimized thicknesses and compositions of the two Cr layers and corresponding etching conditions. Lithography simulations demonstrate that the new HT-PSM has advantages in NILS in aerial images. As a result, initial wafer exposure experiments using the HT-PSM show 13-32% improvements in LCDU compared to that of the conventional 6% PSM due to its higher NILS.

  3. Novel topcoat materials with improved receding angles and dissolution properties for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Yun, Sang Geun; Lee, Jin Young; Yang, Young Soo; Shin, Seung Wook; Lee, Sung Jae; Kwon, Hyo Young; Cho, Youn Jin; Choi, Seung Jib; Choi, Sang Jun; Kim, Jong Seob; Chang, Tuwon

    2010-04-01

    A topcoat material plays a significant role in achieving technology nodes below 45 nm via ArF immersion lithography. Switching the exposure medium between the lens and the photoresist (PR) film from gas (air, n=1) to liquid (H2O, n=1.44) may lead to leaching of the polymer, the photoacid generator (PAG), or the solvent. These substances can contaminate the lens or cause bubbles, which can lead to defects during the patterning. Previously reported topcoat materials mainly use hydrophobic fluoro-compounds and carboxylic acids to provide high dissolution rates (DR) to basic developers as well as high receding contact angles (RCA). Recently, the demand for a new top-coat material has risen since current materials cause water-mark defects and decreases in scan speeds, due to insufficient RCA's. However, RCA and DR are in a trade-off relationship as an increase in RCA generally results in a lower DR. To overcome this, a novel polymer with high-fluorine content was synthesized to produce a topcoat material with improved DR (120 nm/s in 2.38 wt% TMAH) and RCA (>70°). In addition, a strategy to control the pattern profile according to needs of customers was found.

  4. Flexible and reliable high power injection locked laser for double exposure and double patterning ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Yoshino, Masaya; Umeda, Hiroshi; Tsushima, Hiroaki; Watanabe, Hidenori; Tanaka, Satoshi; Matsumoto, Shinich; Onose, Takashi; Nogawa, Hiroyuki; Kawasuji, Yasufumi; Matsunaga, Takashi; Fujimoto, Junichi; Mizoguchi, Hakaru

    2010-04-01

    ArF immersion technology is spotlighted as the enabling technology for the 45nm node and beyond. Recently, double exposure technology is also considered as a possible candidate for the 32nm node and beyond. We have already released an injection lock ArF excimer laser, the GT61A (60W/6kHz/10mJ/0.30pm) with ultra line-narrowed spectrum and stabilized spectrum performance for immersion lithography tools with N.A.>1.3, and we have been monitoring the field reliability data of our lasers used in the ArF immersion segment since Q4 2006. In this report we show field reliability data of our GigaTwin series - twin chamber ArF laser products. GigaTwin series have high reliability. The availability that exceeds 99.5% proves the reliability of the GigaTwin series. We have developed tunable and high power injection-lock ArF excimer laser for double patterning, GT62A (Max90W/6000Hz/Tunable power with 10-15mJ/0.30pm (E95)) based on the GigaTwin platform. A number of innovative and unique technologies are implemented on GT62A. - Support the latest illumination optical system - Support E95 stability and adjustability - Reduce total cost (Cost of Consumables, Cost of Downtime and Cost of Energy & Environment)

  5. Ecology and high-durability injection locked laser with flexible power for double-patterning ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Umeda, Hiroshi; Tsushima, Hiroaki; Watanabe, Hidenori; Tanaka, Satoshi; Yoshino, Masaya; Matsumoto, Shinich; Tanaka, Hiroshi; Kurosu, Akihiko; Kawasuji, Yasufumi; Matsunaga, Takashi; Fujimoto, Junichi; Mizoguchi, Hakaru

    2011-04-01

    ArF immersion technology has been used widely in volume production for 45nm node. For 32nm node and beyond, double patterning technology with ArF immersion lithography is considered to be the main stream solution until EUV is ready. Our target is to reduce CoO(Cost of ownership) and we aim to develop for ecology and high durability laser. We will introduce the latest performance data of the laser built for ArF immersion lithography under the EcoPhoton concept. Eco-photon concept: -CoC (Cost of Consumable) -CoD (Cost of Downtime) -CoE(Cost of Energy & Environment) We have developed flexible and high power injection-lock ArF excimer laser for double patterning, GT62A-1SxE (Max90W/6000Hz/Flexible power with 10-15mJ/0.30pm (E95)) based on the GigaTwin platform5). A number of innovative and unique technologies are implemented on GT62A-1SxE. In addition, GT62A-1SxE is the laser matching the enhancement technology of advanced illumination systems. For example, in order to provide illumination power optimum for resist sensitivity, it has extendable power from 60W to 90W. We have confirmed durability under these concept with the regulated operation condition with flexible power 60-90W. We show the high durability data of GT62A-1SxE with Eco-Photon concept. In addition to the results the field reliability and availability of our Giga Twin series (GT6XA). We also show technologies which made these performances and its actual data. A number of innovative and unique technologies are implemented on GT62A.

  6. XLR 500i: recirculating ring ArF light source for immersion lithography

    NASA Astrophysics Data System (ADS)

    Brown, D. J. W.; O'Keeffe, P.; Fleurov, V. B.; Rokitski, R.; Bergstedt, R.; Fomenkov, I. V.; O'Brien, K.; Farrar, N. R.; Partlo, W. N.

    2007-03-01

    As Argon Fluoride (ArF) lithography moves into high volume production, ArF light sources need to meet performance requirements beyond the traditional drivers of power and bandwidth. The first key requirement is a continuous decrease in Cost of Ownership (CoO) where the industry requirement is for reduction in ArF CoO in line with the historical cost reduction demonstrated for Krypton Fluoride (KrF) light sources. A second requirement is improved light source performance stability. As CD control requirements shrink, following the ITRS roadmap, all process parameters which affect CD variation need tighter control. In the case of the light source, these include improved control of bandwidth, pulse energy stability and wavelength. In particular, CD sensitivity to exposure dose has become a serious challenge for device processing and improvements to laser pulse energy stability can contribute to significantly better dose control. To meet these performance challenges Cymer has designed a new dual chamber laser architecture. The Recirculating Ring design requires 10X less energy from the Master Oscillator (MO). This new configuration enables the MO chamber lifetime to reach that of the power amplifier chamber at around 30Bp. In addition, other optical modules in the system such as the line narrowing module experience lower light intensity, ensuring even longer optics lifetime. Furthermore, the Recirculating Ring configuration operates in much stronger saturation. MO energy instabilities are reduced by a factor of 9X when passed through the Ring. The output energy stability exhibits the characteristics of a fully saturated amplifier and pulse energy stability improvement of 1.5X is realized. This performance enables higher throughput scanner operation with enhanced dose control. The Recirculating Ring technology will be introduced on the XLR 500i, Cymer's fifth-generation dual chamber-based light source built on the production-proven XLA platform. This paper will describe

  7. Understanding the photoresist surface-liquid interface for ArF immersion lithography

    NASA Astrophysics Data System (ADS)

    Conley, Will; LeSuer, Robert J.; Fan, Frank F.; Bard, Allen J.; Taylor, Chris; Tsiartas, Pavlos; Willson, Grant; Romano, Andrew; Dammel, Ralph

    2005-05-01

    Extraction of small molecule components into water from photoresist materials designed for 193 nm immersion lithography has been observed. Leaching of photoacid generator (PAG) has been monitored using three techniques: liquid scintillation counting (LSC); liquid chromatography mass spectrometry (LCMS); and scanning electrochemical microscopy (SECM). LSC was also used to detect leaching of residual casting solvent (RCS) and base. The amount of PAG leaching from the resist films, 30 - 50 ng/cm2, was quantified using LSC. Both LSC and LCMS results suggest that PAG and photoacid leach from the film only upon initial contact with water (within 10 seconds) and minimal leaching occurs thereafter for immersion times up to 30 minutes. Exposed films show an increase in the amount of photoacid anion leaching by upwards of 20% relative to unexposed films. Films pre-rinsed with water for 30 seconds showed no further PAG leaching as determined by LSC. No statistically significant amount of residual casting solvent was extracted after 30 minutes of immersion. Base extraction was quantified at 2 ng/cm2 after 30 seconds. The leaching process is qualitatively described by a model based on the stratigraphy of resist films.

  8. Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography

    NASA Astrophysics Data System (ADS)

    Kim, Sang Kyun; Cho, Hyeon Mo; Koh, Sang Ran; Kim, Mi-young; Yoon, Hui Chan; Chung, Yong-jin; Kim, Jong Seob; Chang, Tuwon

    2008-03-01

    In current semiconductor manufacturing processes, hardmasks have become more prevalent in patterning of small features. A silicon-containing hardmask, which can be spun onto wafers, is desirable in terms of mass production throughput and cost of ownership. Previously, we reported a paper on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography. In this paper, hardmask materials for 45 nm pattern of immersion ArF lithography are described. To achieve 45 nm patterning, a different base resin platform from the previous paper has been used. Furthermore, we have improved the etch resistance by changing our synthesis method without modifying the resin platform and silicon contents. Despite these changes, an excellent storage stability, which is one of the essential requirements for the materials, is still maintained. Characterization and lithographic performance of 45 nm immersion ArF lithography using our new materials are described in detail.

  9. The next-generation ArF excimer laser for multiple-patterning immersion lithography with helium free operation

    NASA Astrophysics Data System (ADS)

    Miyamoto, Hirotaka; Kumazaki, Takahito; Tsushima, Hiroaki; Kurosu, Akihiko; Ohta, Takeshi; Matsunaga, Takashi; Mizoguchi, Hakaru

    2016-03-01

    Multiple patterning ArF immersion lithography has been expected as the promising technology to satisfy tighter leading edge device requirements. A new ArF excimer laser, GT64A has been developed to cope with the prevention against rare resource shortage and the reduction of operational costs. GT64A provides the sophisticated technologies which realize the narrow spectral bandwidth with helium free operation. A helium gas purge has usually been employed due to the low refractive index variation with temperature rises within a line narrowing module(LNM). Helium is a non-renewable resource and the world's reserves have been running out. Nitrogen gas with an affordable price has been used as an alternative purge gas of helium on the restrictive condition of low thermal loads. However, the refractive index variation of nitrogen gas is approximately ten times more sensitive to temperature rises than that of helium, and broadens a spectral bandwidth in the high duty cycle operations. The new LNM design enables heat effect in laser shooting at optical elements and mechanical components in the vicinity of an optical path to be lower. This reduces thermal wavefront deformation of a laser beam without helium gas purge within LNM, and narrows a spectrum bandwidth without helium purge. Gigaphoton proved that the new LNM enabled E95 bandwidth without control to improve a lot with nitrogen purge.

  10. The ArF laser for the next-generation multiple-patterning immersion lithography supporting green operations

    NASA Astrophysics Data System (ADS)

    Ishida, Keisuke; Ohta, Takeshi; Miyamoto, Hirotaka; Kumazaki, Takahito; Tsushima, Hiroaki; Kurosu, Akihiko; Matsunaga, Takashi; Mizoguchi, Hakaru

    2016-03-01

    Multiple patterning ArF immersion lithography has been expected as the promising technology to satisfy tighter leading edge device requirements. One of the most important features of the next generation lasers will be the ability to support green operations while further improving cost of ownership and performance. Especially, the dependence on rare gases, such as Neon and Helium, is becoming a critical issue for high volume manufacturing process. The new ArF excimer laser, GT64A has been developed to cope with the reduction of operational costs, the prevention against rare resource shortage and the improvement of device yield in multiple-patterning lithography. GT64A has advantages in efficiency and stability based on the field-proven injection-lock twin-chamber platform (GigaTwin platform). By the combination of GigaTwin platform and the advanced gas control algorithm, the consumption of rare gases such as Neon is reduced to a half. And newly designed Line Narrowing Module can realize completely Helium free operation. For the device yield improvement, spectral bandwidth stability is important to increase image contrast and contribute to the further reduction of CD variation. The new spectral bandwidth control algorithm and high response actuator has been developed to compensate the offset due to thermal change during the interval such as the period of wafer exchange operation. And REDeeM Cloud™, new monitoring system for managing light source performance and operations, is on-board and provides detailed light source information such as wavelength, energy, E95, etc.

  11. Performance of a 1.35NA ArF immersion lithography system for 40-nm applications

    NASA Astrophysics Data System (ADS)

    de Klerk, Jos; Wagner, Christian; Droste, Richard; Levasier, Leon; Jorritsma, Louis; van Setten, Eelco; Kattouw, Hans; Jacobs, Jowan; Heil, Tilmann

    2007-03-01

    Water based immersion lithography is now widely recognized a key enabler for continued device shrinks beyond the limits of classical dry lithography. Since 2004, ASML has shipped multiple TWINSCAN immersion systems to IC manufacturers, which have facilitated immersion process integration and optimization. In early 2006, ASML commenced shipment of the first immersion systems for 45nm volume production, featuring an innovative in-line catadioptric lens with a numerical aperture (NA) of 1.2 and a high transmission polarized illumination system. A natural extension of this technology, the XT:1900Gi supports the continued drive for device shrinks that the semiconductor industry demands by offering 40nm half-pitch resolution. This tool features a projection lens based on the already proven in-line catadioptric lens concept but with an enhanced, industry leading NA of 1.35. In this paper, we will discuss the immersion technology challenges and solutions, and present performance data for this latest dual wafer stage TWINSCAN immersion system.

  12. 120W ArF laser with high-wavelength stability and efficiency for the next-generation multiple-patterning immersion lithography

    NASA Astrophysics Data System (ADS)

    Ohta, Takeshi; Ishida, Keisuke; Kumazaki, Takahito; Tsushima, Hiroaki; Kurosu, Akihiko; Kakizaki, Kouji; Matsunaga, Takashi; Mizoguchi, Hakaru

    2015-03-01

    The new ArF Immersion Laser, GT64A has been developed to support the next generation multiple-patterning process. It offers the industry's highest output power of 120W with high stability and efficiency. 120W output power with auto-adjusting function enables to meet the requirements of various processes and makes higher-throughput possible even at 450mm-wafers. The increased wavelength stability and bandwidth stability can further improve overlay accuracy and CD error required for the next generation multiple-patterning lithography. Advanced gas control algorithm reduces the consumption of rare gases such as neon to a half. Helium-free operation is also under development to cope with the unstable supply of helium gases worldwide. New advanced wavelength control and bandwidth control algorithm has been developed to meet tighter stability requirement for the next generation multiple-patterning lithography.

  13. Green solution: 120W ArF immersion light source supporting the next-generation multiple-pattering lithography

    NASA Astrophysics Data System (ADS)

    Kumazaki, Takahito; Ohta, Takeshi; Ishida, Keisuke; Tsushima, Hiroaki; Kurosu, Akihiko; Kakizaki, Kouji; Matsunaga, Takashi; Mizoguchi, Hakaru

    2015-03-01

    The difficulty of EUV lithography system development has prolonged the industry's dependence on ArF excimer lasers to realize further advancements in lithography process technologies. Smaller CD with reduced cost requires tighter specifications, and the potential extension to 450mm wafers introduces extremely difficult performance challenges on lasers. One of the most important features of the next generation lasers will be the ability to support green operations while further improving cost of ownership and performance. For example, electricity consumption costs and the dependence on rare gases, such as neon and helium, will become critical considerations for HVM process going forward. As a laser vendor, Gigaphoton continues to innovate and develop solutions that address these important issues. The latest model GT64A with its field-proven, twin-chamber platform has reduced environmental impact while upgrading performance and power. A variety of green technologies are employed on the GT64A. The first is the reduction of gas usage. Parameters, such as input power and gas pressure are closely monitored during operations and fed back to the injection/exhaust gas controller system. By applying a special algorithm, the laser gas consumption can be reduced by up to 50%. More than 96% of the gas used by the lasers is neon. Another rare gas that requires attention is Helium. Recently the unstable supply of helium became a serious worldwide issue. To cope with this situation, Gigaphoton is developing lasers that support completely helium-free operations.

  14. Enabling high volume manufacturing of double patterning immersion lithography with the XLR 600ix ArF light source

    NASA Astrophysics Data System (ADS)

    Rokitski, Rostislav; Fleurov, Vladimir; Bergstedt, Robert; Ye, Hong; Rafac, Robert; Jacques, Robert; Trintchouk, Fedor; Ishihara, Toshihiko; Rao, Rajasekhar; Cacouris, Theodore; Brown, Daniel; Partlo, William

    2009-03-01

    Deep ultraviolet (DUV) lithography improvements have been focused on two paths: further increases in the effective numerical aperture (NA) beyond 1.3, and double patterning (DP). High-index solutions for increasing the effective NA have not gained significant momentum due to several technical factors, and have been eclipsed by an aggressive push to make DP a high-volume manufacturing solution. The challenge is to develop a cost-effective solution using a process that effectively doubles the lithography steps required for critical layers, while achieving a higher degree of overlay performance. As a result, the light source requirements for DP fall into 3 main categories: (a) higher power to enable higher throughput on the scanner, (b) lower operating costs to offset the increased number of process steps, and (c) high stability of optical parameters to support more stringent process requirements. The XLR 600i (6kHz, 90W @15mJ) was introduced last year to enable DP by leveraging the higher performance and lower operating costs of the ring architecture XLR 500i (6kHz, 60W @10mJ) platform currently used for 45nm immersion lithography in production around the world. In February 2009, the XLR 600ix was introduced as a 60/90W switchable product to provide flexibility in the transition to higher power requirements as scanner capabilities are enhanced. The XLR 600ix includes improved optics materials to meet reliability requirements while operating at higher internal fluences. In this paper we will illustrate the performance characteristics during extended testing. Examples of performance include polarization stability, divergence and pointing stability, which enable consistent pupil fill under extreme illumination conditions, as well as overall thermal stability which maintains constant beam performance under large changes in laser operating modes. Furthermore, the unique beam uniformity characteristics that the ring architecture generates result in lower peak energy

  15. Flexible power 90W to 120W ArF immersion light source for future semiconductor lithography

    NASA Astrophysics Data System (ADS)

    Burdt, R.; Thornes, J.; Duffey, T.; Bibby, T.; Rokitski, R.; Mason, E.; Melchior, J.; Aggarwal, T.; Haran, D.; Wang, J.; Rechtsteiner, G.; Haviland, M.; Brown, D.

    2014-03-01

    Semiconductor market demand for improved performance at lower cost continues to drive enhancements in excimer light source technologies. Increased output power, reduced variability in key light source parameters, and improved beam stability are required of the light source to support immersion lithography, multi-patterning, and 450mm wafer applications in high volume semiconductor manufacturing. To support future scanner needs, Cymer conducted a technology demonstration program to evaluate the design elements for a 120W ArFi light source. The program was based on the 90W XLR 600ix platform, and included rapid power switching between 90W and 120W modes to potentially support lot-to-lot changes in desired power. The 120W requirements also included improved beam stability in an exposure window conditionally reduced by 20%. The 120W output power is achieved by efficiency gains in system design, keeping system input power at the same level as the 90W XLR 600ix. To assess system to system variability, detailed system testing was conducted from 90W - 120W with reproducible results.

  16. Simulations of immersion lithography

    NASA Astrophysics Data System (ADS)

    Bai, Min; Lei, Junjiang; Zhang, Lin; Shiely, James P.

    2005-05-01

    Immersion lithography has been regarded as the most viable contender to extend the resolution capability of optical lithography using 193nm wavelength. In parallel with the tremendous effort of overcoming the engineering challenges in immersion, support from modeling and simulations is strongly needed. Although immersion simulation has become available through a number of simulation tools, we need to investigate the model generation and its compatibility within the context of full-chip optical proximity correction (OPC). In this paper, we will describe the physics of a full vector model that is necessary for the high NA optical modeling under immersion. In this full vector model, we consider not only the plane wave decomposition as light travels from the mask to wafer plane, but also the refraction, transmission and reflection of light through a thin film stack on the wafer. We integrated this comprehensive vector model into Synopsys OPC modeling tool ProGen. Through ProGen simulation results, we will discuss several important merits of immersion lithography, as well as the full portability of immersion models into OPC process flow.

  17. Immersion lithography bevel solutions

    NASA Astrophysics Data System (ADS)

    Tedeschi, Len; Tamada, Osamu; Sanada, Masakazu; Yasuda, Shuichi; Asai, Masaya

    2008-03-01

    The introduction of Immersion lithography, combined with the desire to maximize the number of potential yielding devices per wafer, has brought wafer edge engineering to the forefront for advanced semiconductor manufactures. Bevel cleanliness, the position accuracy of the lithography films, and quality of the EBR cut has become more critical. In this paper, the effectiveness of wafer track based solutions to enable state-of-art bevel schemes is explored. This includes an integrated bevel cleaner and new bevel rinse nozzles. The bevel rinse nozzles are used in the coating process to ensure a precise, clean film edge on or near the bevel. The bevel cleaner is used immediately before the wafer is loaded into the scanner after the coating process. The bevel cleaner shows promise in driving down defectivity levels, specifically printing particles, while not damaging films on the bevel.

  18. Solvent Immersion Imprint Lithography

    SciTech Connect

    Vasdekis, Andreas E.; Wilkins, Michael J.; Grate, Jay W.; Kelly, Ryan T.; Konopka, Allan; Xantheas, Sotiris S.; Chang, M. T.

    2014-06-21

    The mechanism of polymer disolution was explored for polymer microsystem prototyping, including microfluidics and optofluidics. Polymer films are immersed in a solvent, imprinted and finally brought into contact with a non-modified surface to permanently bond. The underlying polymer-solvent interactions were experimentally and theoretically investigated, and enabled rapid polymer microsystem prototyping. During imprinting, small molecule integration in the molded surfaces was feasible, a principle applied to oxygen sensing. Polystyrene (PS) was employed for microbiological studies at extreme environmental conditions. The thermophile anaerobe Clostridium Thermocellum was grown in PS pore-scale micromodels, revealing a double mean generation lifetime than under ideal culture conditions. Microsystem prototyping through directed polymer dissolution is simple and accessible, while simultaneous patterning, bonding, and surface/volume functionalization are possible in less than one minute.

  19. 32nm node technology development using interference immersion lithography

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; McCafferty, Diane; Markoya, Louis; Hendrickx, Eric; Hermans, Jan; Ronse, Kurt

    2005-05-01

    The 38nm and 32nm lithography nodes are the next major targets for optical lithography on the Semiconductor Industry Roadmap. The recently developed water-based immersion lithography using ArF illumination will be able to provide an optical solution for lithography at the 45nm node, but it will not be able to achieve the 38nm or the 32nm nodes as currently defined. To achieve these next lithographic nodes will require new, very high refractive index fluids to replace the water used in current immersion systems. This paper describes tests and experiments using an interference immersion lithography test jig to develop key technology for the 32nm node. Interference imaging printers have been available for years, and with the advent of Immersion Lithography, they have a new use. Interference immersion image printing offers users a rapid, cost-effective way to develop immersion lithography, particularly at extremely high resolutions. Although it can never replace classical lens-based lithography systems for semiconductor device production, it does offer a way to develop resist and fluid technology at a relatively low cost. Its simple image-forming format offers easy access to the basic physics of advanced imaging. Issues such as: Polarization of the image forming light rays; Fluid/resist interaction during exposure; Topcoat film performance; and the Line Edge Roughness (LER) of resists at extremely high resolutions can all be readily studied. Experiments are described and results are provided for work on: 32nm imaging tests; high refractive index fluid testing using 193nm wavelength at resolutions well beyond current lens-based system capabilities; and polarization configuration testing on 45nm, 38nm, and 32nm L/S features. Results on the performance of resists and topcoats are reported for 32nm L/S features.

  20. High-n immersion lithography

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; Mulkens, Jan; Graeupner, Paul; McCafferty, Diane; Markoya, Louis; Donders, Sjoerd; Cortie, Rogier; Meijers, Ralph; Evangelista, Fabrizio; Samarakone, Nandarisi

    2008-03-01

    A two-year study on the feasibility of High-n Immersion Lithography shows very promising results. This paper reports the findings of the study. The evaluation shows the tremendous progress made in the development of second-generation immersion fluid technology. Candidate fluids from several suppliers have been evaluated. All the commercial fluids evaluated are viable, so there are a number of options. Life tests have been conducted on bench top fluid-handling systems and the results referenced to full-scale systems. Parameters such as Dose per Laser Pulse, Pulse Rate, Fluid Flow Rate, and Fluid Absorbency at 193nm, and Oxygen/Air Contamination Levels were explored. A detailed evaluation of phenomena such as Last Lens Element (LLE) contamination has been conducted. Lens cleaning has been evaluated. A comparison of High-n fluid-based technology and water-based immersion technology shows interesting advantages of High-n fluid in the areas of Defect and Resist Interaction. Droplet Drying tests, Resist Staining evaluations, and Resist Contrast impact studies have all been run. Defect-generating mechanisms have been identified and are being eliminated. The lower evaporation rate of the High-n fluids compared with water shows the advantages of High-n Immersion. The core issue for the technology, the availability of High-n optical material for use as the final lens element, is updated. Samples of LuAG material have been received from development partners and have been evaluated. The latest status of optical materials and the technology timelines are reported. The potential impact of the availability of the technology is discussed. Synergy with technologies such as Double Patterning is discussed. The prospects for <22nm (hp) are evaluated.

  1. Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Yamashita, T.; Ishikawa, T.; Yoshida, T.; Hayamai, T.; Araki, Takayuki; Aoyama, H.; Hagiwara, T.; Itani, Toshiro; Fujii, Kiyoshi

    2005-05-01

    Various fluorinated polymers were synthesized for application in 193-nm immersion lithography with the goal of improving 157-nm photoresist performance. Their fundamental properties were characterized, such as transparency at 193-nm and 157-nm (wavelength) and solubility in water and a standard alkaline developer. High transparency, i.e., absorbance better than 0.3 μm-1 at 193-nm wavelength, was achieved. The dissolution behaviors of them were studied by using the Quartz Crystal Microbalance (QCM) method. We find that the dissolution rate of Poly(norbornene-2-fluoro-2-hexafluoroalchol) (PNB1FVIP) in 0.065N tetramethylammonium hydroxide (TMAH) was >200 times (nm/s) faster than that of the copolymer of tetrafluoroethylene (TFE) and norbornene-2-fluoro-2-hexafluoroalchol (TFE/NB1FVIP). A resist based on TFE/NB1FVIP was able to delineate 75 nm dense lines by exposure at 193-nm (wavelength) with an alternating phase shift mask using a 0.75 NA ArF scanner. The dissolution rates of the fluoropolymers in water and a 0.262N and 0.065 TMAH can be controlled by optimizing counter monomers containing hexafluoroisopropanol (HFA) unit, carboxylic acid unit and so on. In addition, we have collect water contact angle data. This data shows that fluoropolymers can be used as resist cover materials for 193-nm immersion lithography.

  2. Film stacking architecture for immersion lithography process

    NASA Astrophysics Data System (ADS)

    Goto, Tomohiro; Sanada, Masakazu; Miyagi, Tadashi; Shigemori, Kazuhito; Kanaoka, Masashi; Yasuda, Shuichi; Tamada, Osamu; Asai, Masaya

    2008-03-01

    In immersion lithography process, film stacking architecture will be necessary due to film peeling. However, the architecture will restrict lithographic area within a wafer due to top side EBR accuracy In this paper, we report an effective film stacking architecture that also allows maximum lithographic area. This study used a new bevel rinse system on RF3 for all materials to make suitable film stacking on the top side bevel. This evaluation showed that the new bevel rinse system allows the maximum lithographic area and a clean wafer edge. Patterning defects were improved with suitable film stacking.

  3. Preliminary microfluidic simulations for immersion lithography

    NASA Astrophysics Data System (ADS)

    Wei, Alexander C.; Nellis, Greg F.; Abdo, Amr Y.; Engelstad, Roxann L.; Chen, Cheng-Fu; Switkes, Michael; Rothschild, Mordechai

    2003-06-01

    The premise behind immersion lithography is to improve the resolution for optical lithography technology by increasing the index of refraction in the space between the final projection lens of an exposure system and the device wafer. This is accomplished through the insertion of a high index liquid in place of the low index air that currently fills the gap. The fluid management system must reliably fill the lens-wafer gap with liquid, maintain the fill under the lens throughout the entire wafer exposure process, and ensure that no bubbles are entrained during filling or scanning. This paper presents a preliminary analysis of the fluid flow characteristics of a liquid between the lens and the wafer in immersion lithography. The objective of this feasibility study was to identify liquid candidates that meet both optical and specific fluid mechanical requirements. The mechanics of the filling process was analyzed to simplify the problem and identify those fluid properties and system parameters that affect the process. Two-dimensional computational fluid dynamics (CFD) models of the fluid between the lens and the wafer were developed for simulating the process. The CFD simulations were used to investigate two methods of liquid deposition. In the first, a liquid is dispensed onto the wafer as a "puddle" and then the wafer and liquid move under the lens. This is referred to as passive filling. The second method involves the use of liquid jets in close proximity to the edge of the lens and is referred to as active filling. Numerical simulations of passive filling included a parametric study of the key dimensionless group influencing the filling process and an investigation of the effects of the fluid/wafer and fluid/lens contact angles and wafer direction. The model results are compared with experimental measurements. For active filling, preliminary simulation results characterized the influence of the jets on fluid flow.

  4. Evaluation of ArF lithography for 45-nm node implant layers

    NASA Astrophysics Data System (ADS)

    Bailey, T. C.; Maynollo, J.; Perez, J. J.; Popova, I.; Zhang, B.

    2007-03-01

    Scaling of designs to the 45nm or future nodes presents challenges for KrF lithography. The purpose of this work was to explore several aspects of ArF lithography for implant layers. A comparison of dark loss seen in a KrF resist and TARC system to that seen in an ArF system showed significant differences. While the KrF resist yielded dark loss that varied with CD and pitch, the ArF resist showed very little dark loss and no significant variation through the design space. ArF resist were observed to have marginal adhesion to various substrates. Improvements in adhesion performance were shown by pre-treating the substrate with various processes, of which an ozone clean provided the best results. Optimization of the HMDS priming conditions also improved adhesion, and it was observed that the HMDS reaction proceeds at different rates on different subsatrates, which is particularly important for implant layers where the resist must adhere to both Si and SiO II. The effect of ArF resist profile with varying reflectivity swing position is shown, and some investigation into reflectivity optimization techniques was performed. Low-index ArF TARC was shown to reduce the CD variation over polysilicon topography, and wet developable BARC was demonstrated to provide consistent profiles on both Si and SiO II substrates. Finally, a comparison of ArF and KrF resists after As implant indicates that the ArF resist showed similar shrinkage performance to the KrF resist.

  5. Resolution enhancement technology for ArF dry lithography at 65 nm node

    NASA Astrophysics Data System (ADS)

    Gao, Songbo; Li, Yanqui

    2007-12-01

    The performance of ArF dry lithography at 65 nm node was studied together with RET. Commercial software Prolith 9.0 and in-house-software MicroCruiser 5.0 were used for simulation and mass data process. The combination of different phase shift mask (PSM), off axis illumination and patterns were chosen for this research. The image contrast, nominal image log-slope (NILS), depth of focus (DOF) and resist profile were considered to judge the lithography performance. The results show that the combination of small sigma conventional illumination and alternating phase shift mask (alt- PSM) is the best choice for Line/Space (L/S) patterns of different pitches. The isolate L/S pattern can be imaged with a large image contrast and DOF if alt-PSM and several kinds of illumination (such as small sigma, annular, and quasar illumination) are joined together. For semi-dense and dense L/S pattern, good lithography performance can be reached by using only small sigma illumination and alt-PSM. The impact of polarization illumination was also considered. Y-polarization illumination enhances the image contrast, NILS and the DOF for most conditions. The Z-orientation resist image fidelity was studied by optimization of the double bottom anti-reflection coating (DBARC) and resist thickness. This research predicts that 65 nm L/S pattern can be fabricated by current ArF dry lithography system.

  6. Hybrid source mask optimization for robust immersion lithography.

    PubMed

    Ma, Xu; Han, Chunying; Li, Yanqiu; Wu, Bingliang; Song, Zhiyang; Dong, Lisong; Arce, Gonzalo R

    2013-06-20

    To keep pace with the shrinkage of critical dimension, source and mask optimization (SMO) has emerged as a promising resolution enhancement technique to push the resolution of 193 nm argon fluoride immersion lithography systems. However, most current pixelated SMO approaches relied on scalar imaging models that are no longer accurate for immersion lithography systems with hyper-NA (NA>1). This paper develops a robust hybrid SMO (HSMO) algorithm based on a vector imaging model capable of effectively improving the robustness of immersion lithography systems to defocus and dose variations. The proposed HSMO algorithm includes two steps. First, the individual source optimization approach is carried out to rapidly reduce the cost function. Subsequently, the simultaneous SMO approach is applied to further improve the process robustness by exploiting the synergy in the joint optimization of source and mask patterns. The conjugate gradient method is used to update the source and mask pixels. In addition, a source regularization approach and source postprocessing are both used to improve the manufacturability of the optimized source patterns. Compared to the mask optimization method, the HSMO algorithm achieves larger process windows, i.e., extends the depth of focus and exposure latitude, thus more effectively improving the process robustness of 45 nm immersion lithography systems.

  7. Design of chirped fly's eye uniformizer for ArF lithography illumination system

    NASA Astrophysics Data System (ADS)

    Xiao, Lei; Li, Yanqiu; Wei, Lidong

    2014-11-01

    Fly's eye uniformizer is the key part of ArF lithography illumination system, whose main function is to illuminate the reticle uniformly. Due to the periodic structure of regular fly's eye uniformizer and the high coherence of the ArF laser, the output intensity distribution is modulated with equidistant sharp intensity peaks (interference speckle pattern) which disturbed the uniformity on the reticle. In this paper, we design a chirped fly's eye uniformizer which consists of chirped fly's eye and a condenser for illumination system in ArF lithography system. The chirped fly's eye consists of individually shaped micro-lenses defined by a parametric description which can be derived completely from analytical functions. The micro-lenses with different thicknesses in the chirped fly's eye have a function of delaying the optical path which reducing the laser coherence and speckle pattern on the reticle. Detailed design process of the chirped fly's eye uniformizer for numerical aperture (NA) 0.75 lithography illumination system is presented. Light intensity distribution on reticle produced by regular and chirped fly's eye uniformizer are analyzed and compared by the method of wave optics, and the results show that chirped can restrain sharp intensity peaks efficiently. Furthermore, the chirped fly's eye uniformizer has been traced in LightTools software under conventional and annual illumination modes, and the non-uniformity of the non-scan and scan direction on the reticle reached 0.75% and 1.24% respectively. The simulation results show that the chirped fly's eye uniformizer can provide high illumination uniformity and reduce the speckle pattern efficiently without additional elements.

  8. Modular Polymer Biosensors by Solvent Immersion Imprint Lithography

    SciTech Connect

    Moore, Jayven S.; Xantheas, Sotiris S.; Grate, Jay W.; Wietsma, Thomas W.; Gratton, Enrico; Vasdekis, Andreas

    2016-01-01

    We recently demonstrated Solvent Immersion Imprint Lithography (SIIL), a rapid benchtop microsystem prototyping technique, including polymer functionalization, imprinting and bonding. Here, we focus on the realization of planar polymer sensors using SIIL through simple solvent immersion without imprinting. We describe SIIL’s impregnation characteristics, including an inherent mechanism that not only achieves practical doping concentrations, but their unexpected 4-fold enhancement compared to the immersion solution. Subsequently, we developed and characterized optical sensors for detecting molecular O2. To this end, a high dynamic range is reported, including its control through the immersion duration, a manifestation of SIIL’s modularity. Overall, SIIL exhibits the potential of improving the operating characteristics of polymer sensors, while significantly accelerating their prototyping, as it requires a few seconds of processing and no need for substrates or dedicated instrumentation. These are critical for O2 sensing as probed by way of example here, as well as any polymer permeable reactant.

  9. Modular Polymer Biosensors by Solvent Immersion Imprint Lithography.

    PubMed

    Moore, J S; Xantheas, S S; Grate, J W; Wietsma, T W; Gratton, E; Vasdekis, A E

    2016-01-01

    We recently demonstrated Solvent Immersion Imprint Lithography (SIIL), a rapid benchtop microsystem prototyping technique, including polymer functionalization, imprinting and bonding. Here, we focus on the realization of planar polymer sensors using SIIL through simple solvent immersion without imprinting. We describe SIIL's impregnation characteristics, including an inherent mechanism that not only achieves practical doping concentrations, but their unexpected 2-fold enhancement compared to the immersion solution. Subsequently, we developed and characterized optical sensors for detecting molecular O2. To this end, a substantially high dynamic range is reported, including its control through the immersion duration, a manifestation of SIIL's modularity. Overall, SIIL exhibits the potential of improving the operating characteristics of polymer sensors, while significantly accelerating their prototyping, as it requires a few seconds of processing and no need for substrates or dedicated instrumentation. These are critical for O2 sensing as probed by way of example here, as well as any polymer permeable reactant.

  10. Verification of optical proximity effect in immersion lithography

    NASA Astrophysics Data System (ADS)

    Suganaga, Toshifumi; Maejima, Shinroku; Hanawa, Tetsuro; Ishibashi, Takeo; Nakao, Shuji; Shirai, Seiichiro; Narimatsu, Koichiro; Suko, Kazuyuki; Shiraishi, Kenichi; Ishii, Yuki; Ando, Tomoyuki; Ohmori, Katsumi

    2006-03-01

    193 nm lithography is one of the most promising technologies for next-generation lithography and is being actively evaluated for making it practicable (1,2). First, we evaluated an immersion lithography tool (engineering evaluation tool (EET)) (3) and a dry lithography tool (S307E) with the same numerical aperture (NA = 0.85), manufactured by Nikon Corporation. As a result, an increase in the depth of focus (DOF) of the EET to 200 nm in comparison with the DOF (110 nm) of the dry exposure tool was confirmed in a 90 nm isolated space pattern. Next, the optical proximity effect (OPE) in this pattern was evaluated. Generally, when an immersion lithography tool is compared with a dry one with the same NA or both the tools, only an increase in the DOF is found. However, we confirmed that the OPE (The OPE of the 90 nm isolated space pattern is defined as the difference in the space width between a dense space and an isolated space.) of the dry exposure tool for the 90 nm isolated space pattern reduced from 33.1 nm to 14.1 nm by immersion lithography. As the effect of the reduction of 19 nm, the OPE reduced to 15.2 nm by the effect of the top coatings (TCs) and to 3.8 nm by the optical characteristics. An impact of about 5 nm on the OPE was confirmed by the process parameters-film thickness and the pre-bake temperature of the TC. In the case that the solvent was replaced with a high boiling point solvent, the impact changed from 5 to 20 nm further, the replacement of the solvent had a considerable impact on the OPE. However, this influence differs considerably according to the kind of resists; further, it was shown that the addition of acid materials and a change in the polymer base resulted in a high impact on the OPE for a certain resist. Thus, it was demonstrated that the selection of TC is very important for the OPE in immersion lithography.

  11. Inverse pupil wavefront optimization for immersion lithography.

    PubMed

    Han, Chunying; Li, Yanqiu; Dong, Lisong; Ma, Xu; Guo, Xuejia

    2014-10-10

    As the critical dimension of integrated circuits is continuously shrunk, thick mask induced aberration (TMIA) cannot be ignored in the lithography image process. Recently, a set of pupil wavefront optimization (PWO) approaches has been proposed to compensate for TMIA, based on a wavefront manipulator in modern scanners. However, these prior PWO methods have two intrinsic drawbacks. First, the traditional methods fell short in building up the analytical relationship between the pupil wavefront and the cost function, and used time-consuming algorithms to solve for the PWO problem. Second, in traditional methods, only the spherical aberrations were optimized to compensate for the focus exposure matrix tilt and best focus shift induced by TMIA. Thus, the degrees of freedom were limited during the optimization procedure. To overcome these restrictions, we build the analytical relationship between the pupil wavefront and the cost function based on Abbe vector imaging theory. With this analytical model and the Fletcher-Reeves conjugate-gradient algorithm, an inverse PWO method is innovated to balance the TMIA including 37 Zernike terms. Simulation results illustrate that our approach significantly improves image fidelity within a larger process window. This demonstrates that TMIA is effectively compensated by our inverse PWO approach.

  12. Gap Fill Materials Using Cyclodextrin Derivatives in ArF Lithography

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi; Shinjo, Tetsuya; Sakaida, Yasushi; Hashimoto, Keisuke

    2007-11-01

    High planarizing gap fill materials based on β-cyclodextrin in ArF photoresist under-layer materials have been developed for fast etching in CF4 gas. Gap fill materials used in the via-first dual damascene process need to have high etch rates to prevent crowning or fencing on top of the trench after etching and a small thickness bias between the dense and blanket areas to minimize issues observed during trench lithography by narrowing the process latitude. Cyclodextrin is a circular oligomer with a nanoscale porous structure that has a high number of oxygen atoms, as calculated using the Ohnishi parameter, providing high etch rates. Additionally, since gap fill materials using cyclodextrin derivatives have low viscosities and molecular weights, they are expected to exhibit excellent flow properties and minimal thermal shrinkage during baking. In this paper, we describe the composition and basic film properties of gap fill materials; planarization in the via-first dual damascene process and etch rates in CF4 gas compared with dextrin with α-glycoside bonds in polysaccharide, poly(2-hydroxypropyl methacrylate) and poly(4-hydroxystyrene). The β-cyclodextrin used in this study was obtained by esterifying the hydroxyl groups of dextrin resulting in improved wettability on via substrates and solubility in photoresist solvents such as propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate and ethyl lactate. Gap fill materials using cyclodextrin derivatives showed good planarization and via filling performance without observing voids in via holes. In addition to superior via filling performance, the etch rate of gap fill materials using β-cyclodextrin derivatives was 2.8-2.9 times higher than that of an ArF photoresist, evaluated under CF4 gas conditions by reactive ion etching. These results were attributed to the combination of both nanoscale porous structures and a high density of oxygen atoms in our gap fill materials using cyclodextrin

  13. Solvent immersion nanoimprint lithography of fluorescent conjugated polymers

    NASA Astrophysics Data System (ADS)

    Whitworth, G. L.; Zhang, S.; Stevenson, J. R. Y.; Ebenhoch, B.; Samuel, I. D. W.; Turnbull, G. A.

    2015-10-01

    Solvent immersion imprint lithography (SIIL) was used to directly nanostructure conjugated polymer films. The technique was used to create light-emitting diffractive optical elements and organic semiconductor lasers. Gratings with lateral features as small as 70 nm and depths of ˜25 nm were achieved in poly(9,9-dioctylfluorenyl-2,7-diyl). The angular emission from the patterned films was studied, comparing measurement to theoretical predictions. Organic distributed feedback lasers fabricated with SIIL exhibited thresholds for lasing of ˜40 kW/cm2, similar to those made with established nanoimprint processes. The results show that SIIL is a quick, convenient and practical technique for nanopatterning of polymer photonic devices.

  14. Immersion defectivity study with volume production immersion lithography tool for 45 nm node and below

    NASA Astrophysics Data System (ADS)

    Nakano, Katsushi; Nagaoka, Shiro; Yoshida, Masato; Iriuchijima, Yasuhiro; Fujiwara, Tomoharu; Shiraishi, Kenichi; Owa, Soichi

    2008-03-01

    Volume production of 45nm node devices utilizing Nikon's S610C immersion lithography tool has started. Important to the success in achieving high-yields in volume production with immersion lithography has been defectivity reduction. In this study we evaluate several methods of defectivity reduction. The tools used in our defectivity analysis included a dedicated immersion cluster tools consisting of a Nikon S610C, a volume production immersion exposure tool with NA of 1.3, and a resist coater-developer LITHIUS i+ from TEL. In our initial procedure we evaluated defectivity behavior by comparing on a topcoat-less resist process to a conventional topcoat process. Because of its simplicity the topcoatless resist shows lower defect levels than the topcoat process. In a second study we evaluated the defect reduction by introducing the TEL bevel rinse and pre-immersion bevel cleaning techniques. This technique was shown to successfully reduce the defect levels by reducing the particles at the wafer bevel region. For the third defect reduction method, two types of tool cleaning processes are shown. Finally, we discuss the overall defectivity behavior at the 45nm node. To facilitate an understanding of the root cause of the defects, defect source analysis (DSA) was applied to separate the defects into three classes according to the source of defects. DSA analysis revealed that more than 99% of defects relate to material and process, and less than 1% of the defects relate to the exposure tool. Material and process optimization by collaborative work between exposure tool vendors, track vendors and material vendors is a key for success of 45nm node device manufacturing.

  15. Customized illumination shapes for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Ling, Moh Lung; Chua, Gek Soon; Lin, Qunying; Tay, Cho Jui; Quan, Chenggen

    2008-03-01

    In this paper, a study on customized illumination shape configurations as resolution enhancement for 45nm technology node will be presented. Several new source shape configurations will be explored through simulation based on 193nm immersion lithography on 6% Attenuated Phase Shift Mask. Forbidden pitch effect is commonly encountered in the application of off axis illumination (OAI). The illumination settings are often optimized to allow maximum process window for a pitch. This is done by creating symmetrical distribution of diffraction order on the pupil plane. However, at other pitch, the distribution of diffraction order on the pupil plane results in severe degradation in image contrast and results in significant critical dimension (CD) fluctuation. The problematic pitch is often known as forbidden pitch. It has to be avoided in the design and thus limited the pitch range to be imaged for particular illumination. An approach to modify off axis illumination to minimize the effect of forbidden pitch is explored in this study. The new customized shape for one dimensional line and space pattern is modified from current off axis illumination. Simulation study is done to evaluate the performance some customized shapes. The extent of CD fluctuation and CD through pitch uniformity is analyzed to determine the performance enhancement of the new illumination shapes. From simulation result, the proposed modification have significantly improved the through pitch performance and minimized the effect of forbidden pitch.

  16. Optimization of BARC process for hyper-NA immersion lithography

    NASA Astrophysics Data System (ADS)

    Lee, Kilyoung; Lee, Junghyung; Lee, Sungkoo; Park, Dongheok; Bok, Cheolkyu; Moon, Seungchan

    2008-03-01

    The extension of current 193nm immersion lithography technology is depending on increasing the numerical aperture (NA). High-resolution imaging requires the decrease of photoresist thickness to compensate for smaller depth of focus (DOF) and prevent pattern collapse. Poor etch selectivity between photoresist and BARC reads to the use of thinner BARC with faster etch-rate. Also, controlling reflectance over a wider range of incident angles for hyper-NA above 1.0 gives more challenge for thin BARC. To reduce substrate reflectivity, various material strategies (dual-layer BARC such as organic/inorganic BARC or organic/organic BARC, Si-based ARC/spin-on carbon (SOC), and so on) have been introduced through many papers. Organic dual-layer BARC is capable of suppressing reflectivity through wide range of incident angles. But, the inevitable increase of its thickness is not a desirable direction due to the decreasing trend of photoresist thickness. When amorphous carbon (a-C) is used as a hardmask for sub-stack, the combination of organic/inorganic BARC (i.e. SiON) is currently well known process. Si-ARC/SOC may be the promising candidates of hardmask because Si component of Si-ARC affords a high etch selectivity to photoresist and its combination with SOC decreases reflectance. The optical constants of above organic materials can be tuned to control the substrate reflectivity for hyper-NA.

  17. High index fluoride materials for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Nawata, T.; Inui, Y.; Masada, I.; Nishijima, E.; Satoh, H.; Fukuda, T.

    2006-03-01

    We tried to investigate various kinds of metal fluoride materials which have higher gravity than CaF II and cubic crystal system, and we found out barium lithium fluoride (BaLiF 3) and potassium yttrium fluoride (KY 3F 10) as candidates for the last lens material. We have developed unique Czochralski (CZ) machines and techniques for the growth of large calcium fluoride single crystals. And we applied these technologies to the growth of fluoride high index materials. We have succeeded to grow the large BaLiF 3 single crystal with 120mm in diameter and a KY 3F 10 single crystal, and measured their basic properties such as refractive index, VUV transmittance, birefringence, and so on. As a result of our basic research, we found out that BaLiF 3 single crystal is transparent at VUV region, and the refractive index at 193nm is 1.64, and KY 3F 10 single crystal has the index of 1.59 at the wavelength of 193nm which is slightly higher than fused silica. We expect that these fluoride high index materials are useful for the last lens material of the next generation immersion lithography.

  18. Development of fluoropolymer for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Shirota, Naoko; Takebe, Yoko; Sasaki, Takashi; Yokokoji, Osamu; Toriumi, Minoru; Masuhara, Hiroshi

    2006-03-01

    We had already developed several series of fluoropolymers, FPRs and FUGUs, having a partially fluorinated monocyclic structure and having acidic hydroxyl group, which acts as dissolution unit into alkaline solution. Then we have optimized these polymers for top-coat as the developer-soluble type in the 193nm immersion lithography. However the hydrophobicity of these polymers were a little poor due to its hydroxyl group. So we thought that the introduction of water repellent moiety into the these polymers structure is effective to improve the their hydrophobicity though the increase of water repellent unit in the polymer leads to lower dissolution rate in developer. To introduce as much as possible of hydrophobicity unit, we selected FUGU as platform, which has larger dissolution rate in developer than that of FPRs, We copolymerized FUGU with higher water-repellent component and obtained three copolymers, FUGU-CoA, FUGU-CoB, and FUGU-CoC. In this paper, we described characteristics and evaluation of these polymers. Most of these polymer showed an improvement of hydrophobicity, in particular FUGU-CoB had excellent hydrophobicity due to introduction bulky containing-fluorine group. In this study, we also investigated the interaction between the water and various polymers by using QCM method. The difference between FUGU and water repellent polymers for swelling behavior to water became clear by analysis of diffusion coefficient. We found that our new co-polymers have excellent diffusion coefficient than FUGU which was confirmed by QCM method used to evaluate water permeability and water diffusion in the materials.

  19. Impact of ArF attenuated PSM using multishifter layer (TiN/Si3N4) for next-generation lithography

    NASA Astrophysics Data System (ADS)

    Nam, Kyung-Han; Kim, Lee-Ju; Jeong, Hyoung-Sup; Lee, Sang W.; Lee, In-Soo; Shin, Cheol; Kim, Hong-Seok; Dieu, L.; Paek, Seung-Weon; Koo, Sang-Sool; Bae, Sang-Man; Ham, Young-Mog; Shin, Ki-Soo

    2001-09-01

    ArF lithography that is expected the candidate for next generation optical lithography and attenuated Phase Shift Mask (att-PSM) will be adapted for 0.12micrometers design-rule and beyond. For the next-generation lithography, the most important requirement for mask process is enough resolution and good pattern fidelity to generate various critical patterns, of which sizes are below 0.5micrometers main pattern including OPC patterns. In this paper we describe in terms of blank mask properties, mask making process and wafer performance of ArF attenuated Phase Shift Mask (att-OSM) using TiN/Si3N4(abbreviated as TiN/SiN) multi-layer for Next Generation Lithography (NGL). In view point of material, we have evaluated for the applicability of TiN/SiN multi-layer to ArF lithography as compared with non- stoichiometric MoSiON-based single-layer structure. In mask making process, we used Chemically Amplified Resist (CAR) process characteristics and Dry etching system for improvement of enough resolution and pattern fidelity. Also we have investigated wafer performance for ArF att-PSM in terms of process windows as compared with BIM (Binary Intensity Mask) in 120nm D/R real cell pattern and 100nm L/S(Line and Space)D/R pattern, respectively.

  20. Simultaneous optimization of dose and focus controls in advanced ArF immersion scanners

    NASA Astrophysics Data System (ADS)

    Toki, Tsuyoshi; Izikson, Pavel; Kosugi, Junichi; Sakasai, Naruo; Saotome, Keiko; Suzuki, Kazuaki; Kandel, Daniel; Robinson, John C.; Koyanagi, Yuji

    2010-04-01

    We have developed a new scheme of process control combining a CD metrology system and an exposure tool. A new model based on Neural Networks has been created in KLA-Tencor's "KT Analyzer" which calculates the dose and focus errors simultaneously from CD parameters, such as mid CD and height information, measured by a scatterometry (OCD) measurement tool. The accuracy of this new model was confirmed by experiment. Nikon's "CDU master" then calculated the control parameters for dose and focus per each field from the dose and focus error data of a reference wafer provided by KT Analyzer. Using the corrected parameters for dose and focus from CDU master, we exposed wafers on an NSR-S610C (ArF immersion scanner), and measured the CDU on a KLA SCD100 (OCD tool). As a result, we confirmed that CDU in the entire wafer can be improved more than 60% (from 3.36nm (3σ) to 1.28nm (3σ)).

  1. Efficient modeling of immersion lithography in an aggressive RET mask synthesis flow

    NASA Astrophysics Data System (ADS)

    Bai, Min; Lei, Junjiang; Zhang, Lin; Shiely, James P.

    2005-06-01

    Immersion lithography has been accepted as the major breakthrough for enabling next generation deep subwavelength chip production. As it extends the resolution capability of optical lithography to the next technology node, it brings fresh challenges to resolution enhancement techniques (RET). Accurate lithography modeling becomes even more critical for RET at the sub-65nm nodes. On the other hand, immersion models need to be fully compatible within the context of existing optical proximity correction (OPC) flow. With the hyper NA approach, modeling of immersion lithography requires full vector treatment of the electric fields in the propagating light wave. We developed a comprehensive vector model that considers not only the plane wave decomposition from the mask to the wafer plane, but also the light propagation through a thin film stack on the wafer. With the integration of this model into Synopsys OPC modeling tool ProGen, we have simulated and demonstrated several important enhancements introduced by immersion. In the mean time, the modeling and correction flow for immersion is completely compatible with the current OPC infrastructure.

  2. Process window simulation study with immersion lithography for 45-nm technology node

    NASA Astrophysics Data System (ADS)

    Park, Oseo; Gutmann, Alois; Neumueller, Walter; Back, David

    2004-05-01

    As the potentials of experimental studies are still limited, a predictive resist image simulation of Immersion lithography is very important for a better understanding of the technology. One of the most critical issues in Immersion lithography is the description of the influence of immersion which is the presence of a uniform liquid layer between the last objective lens and the photo resist, on optical lithography. It enables the real part of the index of refraction in the image space, and the numerical aperture of the projection lens, to be greater than unity. Therefore, it is virtually involves Maxwell vector solution approach, including polarization effects and arbitrary thin film multi-layers. This paper discusses the improvement in process window afforded by immersion under a variety of conditions, including 193nm and 157nm, Off-axis illumination, Attenuated Phase Shift Mask for 65nm and 45nm technology node. Comparisons with dry and liquid lithography simulations are used to evaluate the availability and the performance of the proposed approach. The implemented resist simulation approach is examined the impact to the process window of variations in liquid refractive index as well.

  3. Characterization of resist and topcoat properties for immersion lithography

    NASA Astrophysics Data System (ADS)

    Jain, Kaveri; Hishiro, Yoshi

    2008-03-01

    For this paper, we have performed a fundamental characterization of various resists and topcoats supplied by different vendors. The resists and topcoats were selected based on the inherent properties of these chemicals (elemental composition, contact angle, etc.). The goal of this study is to better understand the resist and topcoat interaction under various process conditions. We have characterized these materials using a number of analytical techniques such as atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). We have also provided data on the effect of the constitution of the resist and topcoat materials on the resist profile, under both dry and immersion exposure.

  4. Current status of water immersion lithography and prospect of higher index method

    NASA Astrophysics Data System (ADS)

    Owa, Soichi; Nakano, Katsushi; Nagasaka, Hiroyuki; Kohno, Hirotaka; Ohmura, Yasuhiro; McCallum, Martin

    2007-02-01

    In this paper we will present the progress that has been made in the area of tool development for ArF Immersion. The local fill nozzle design adopted by Nikon has been implemented in the world's first production Immersion tools, the S609B and S610C, to produce bubble free and low defect imaging. Defect, imaging and overlay results from the S609B are presented showing manufacturing level results. First imaging results from the 1.30 NA S610C are also reported showing the tools capability to image at the 45nm node and beyond. Beyond 1.30 NA it is likely that high index materials will be required. We examine the prospects for taking immersion to lens NA's of around 1.55 with second generation fluids and even 1.70 NA with third generation fluids. However, it cannot be forgotten that this also requires new glass materials for lenses; the status of these will also be discussed. It is likely that high index immersion, if implemented, will not be in time for most customers' roadmaps, in the interim it is likely that Double Patterning (DP) will be used with potential cost penalites. The potential applications of this technique will be briefly discussed.

  5. Impact of water and top-coats on lithographic performance in 193-nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Kishimura, Shinji; Gronheid, Roel; Ercken, Monique; Maenhoudt, Mireille; Matsuo, Takahiro; Endo, Masayuki; Sasago, Masaru

    2005-05-01

    We have investigated the impact of water and top-coats on the resist in water immersion lithography by analyzing the dissolution behavior and the film constitution. We used a resist development analyzer (RDA) and a quartz crystal microbalance (QCM) to study the dissolution behavior. The film constitution was studied through the gradient shaving preparation (GSP) method in combination with TOF-SIMS. The GSP/TOF-SIMS method reveals the constitution of a top-coat/resist film. We found that, in a resist, the photo acid generator (PAG) anion at a depth of about 30 nm from the surface leached into water and a surface insoluble layer formed during immersion. The estimated amount of leaching was about 5% of the original content. The formation of an intermixing layer with a low dissolution rate was observed for some top-coat and resist combinations. The thickness of the intermixing layer and the formation behavior were made clear. We believe the intermixing layer was caused by the top-coat solvent eluting resist components. In a top-coat, a PAG existed within the top-coat and the PAG anion leached into the water. Top-coats blocked gaseous decomposed products from the resist film during PEB. These results are useful for estimating patterning characteristics and the defectivity due to materials for actual immersion exposure.

  6. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications

    NASA Astrophysics Data System (ADS)

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I.; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.69), which enables efficient light focusing even inside other media such as water or adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping and fiber probes.

  7. High refractive index Fresnel lens on a fiber fabricated by nanoimprint lithography for immersion applications.

    PubMed

    Koshelev, Alexander; Calafiore, Giuseppe; Piña-Hernandez, Carlos; Allen, Frances I; Dhuey, Scott; Sassolini, Simone; Wong, Edward; Lum, Paul; Munechika, Keiko; Cabrini, Stefano

    2016-08-01

    In this Letter, we present a Fresnel lens fabricated on the end of an optical fiber. The lens is fabricated using nanoimprint lithography of a functional high refractive index material, which is suitable for mass production. The main advantage of the presented Fresnel lens compared to a conventional fiber lens is its high refractive index (n=1.68), which enables efficient light focusing even inside other media, such as water or an adhesive. Measurement of the lens performance in an immersion liquid (n=1.51) shows a near diffraction limited focal spot of 810 nm in diameter at the 1/e2 intensity level for a wavelength of 660 nm. Applications of such fiber lenses include integrated optics, optical trapping, and fiber probes.

  8. Towards ultimate optical lithography with NXT:1950i dual stage immersion platform

    NASA Astrophysics Data System (ADS)

    Castenmiller, Tom; van de Mast, Frank; de Kort, Toine; van de Vin, Coen; de Wit, Marten; Stegen, Raf; van Cleef, Stefan

    2010-04-01

    Optical lithography, currently being used for 45-nm semiconductor devices, is expected to be extended further towards the 32-nm and 22-nm node. A further increase of lens NA will not be possible but fortunately the shrink can be enabled with new resolution enhancement methods like source mask optimization (SMO) and double patterning techniques (DPT). These new applications lower the k1 dramatically and require very tight overlay control and CD control to be successful. In addition, overall cost per wafer needs to be lowered to make the production of semiconductor devices acceptable. For this ultimate era of optical lithography we have developed the next generation dual stage NXT:1950i immersion platform. This system delivers wafer throughput of 175 wafers per hour together with an overlay of 2.5nm. Several extensions are offered enabling 200 wafers per hour and improved imaging and on product overlay. The high productivity is achieved using a dual wafer stage with planar motor that enables a high acceleration and high scan speed. With the dual stage concept wafer metrology is performed in parallel with the wafer exposure. The free moving planar stage has reduced overhead during chuck exchange which also improves litho tool productivity. In general, overlay contributors are coming from the lithography system, the mask and the processing. Main contributors for the scanner system are thermal wafer and stage control, lens aberration control, stage positioning and alignment. The back-bone of the NXT:1950i enhanced overlay performance is the novel short beam fixed length encoder grid-plate positioning system. By eliminating the variable length interferometer system used in the previous generation scanners the sensitivity to thermal and flow disturbances are largely reduced. The alignment accuracy and the alignment sensitivity for process layers are improved with the SMASH alignment sensor. A high number of alignment marker pairs can be used without throughput loss, and

  9. Novel rinse process for reducing pattern collapse in 0.30-k1 ArF lithography

    NASA Astrophysics Data System (ADS)

    Lee, Geunsu; Hwang, Young Sun; Ban, Keun Do; Bok, Cheol Kyu; Moon, Seung Chan; Shin, Ki Soo

    2004-05-01

    In-house rinse, HR31 has a strong point in terms of lithographic performance, defect, bubble, and metal impurity. The collapse behavior was quantified in terms of SMCD (Standing Minimum CD) in 80nm dense L/S ArF resist patterns. It contributed to enlarging process window by improving collapse (SMCD: 84-->72nm), CD uniformity (12.3-->9.3nm), and lithographic margin [EL (11.7-->12.8%), and DOF (0.20-->0.25μm)].

  10. Charting CEBL's role in mainstream semiconductor lithography

    NASA Astrophysics Data System (ADS)

    Lam, David K.

    2013-09-01

    historically kept it out of mainstream fabs. Thanks to continuing EBDW advances combined with the industry's move to unidirectional (1D) gridded layout style, EBDW promises to cost-efficiently complement 193nm ArF immersion (193i) optical lithography in high volume manufacturing (HVM). Patterning conventional 2D design layouts with 193i is a major roadblock in device scaling: the resolution limitations of optical lithography equipment have led to higher mask cost and increased lithography complexity. To overcome the challenge, IC designers have used 1D layouts with "lines and cuts" in critical layers.1 Leading logic and memory chipmakers have been producing advanced designs with lines-and-cuts in HVM for several technology nodes in recent years. However, cut masks in multiple optical patterning are getting extremely costly. Borodovsky proposes Complementary Lithography in which another lithography technology is used to pattern line-cuts in critical layers to complement optical lithography.2 Complementary E-Beam Lithography (CEBL) is a candidate to pattern the Cuts of optically printed Lines. The concept of CEBL is gaining acceptance. However, challenges in throughput, scaling, and data preparation rate are threatening to deny CEBL's role in solving industry's lithography problem. This paper will examine the following issues: The challenges of massively parallel pixel writing The solutions of multiple mini-column design/architecture in: Boosting CEBL throughput Resolving issues of CD control, CDU, LER, data rate, higher resolution, and 450mm wafers The role of CEBL in next-generation solution of semiconductor lithography

  11. Optimization of resist shrink techniques for contact hole and metal trench ArF lithography at the 90-nm technology node

    NASA Astrophysics Data System (ADS)

    Wallace, Christine; Schacht, Jochen; Huang, I. H.; Hsu, Ruei H.

    2004-05-01

    Two fundamentally different approaches for chemical ArF resist shrinkage are evaluated and integrated into process flows for 90 nm technology node. The chemical shrink and the corresponding gain in process window is studied in detail for different resist types with respect to CD uniformity through pitch, linearity and resist profiles. For both, SAFIER and RELACS material, the sensitivity of the shrink process with respect to the baking temperature is characterized by a temperature matrix to check process stability, and optimized conditions are found offering an acceptable amount of shrinkage at contact and trench levels. For the SAFIER material, thermal flow contributes to the chemical shrink which is a function of the photoresist chemistry and its hydrodynamic properties depending on the resists" glass transition temperature (Tg) and the baking temperature: at baking temperatures close to Tg, a proximity and pattern dependent shrink is observed. For a given resist, line-space patterns and contact holes shrink differently, and their resist profiles are affected significantly. Additionally, the chemical shrinkage depends on the size of contact holes and resist profile prior to the application of the SAFIER process. At baking temperatures below Tg some resists exhibit no shrink at all. The RELACS technique offers a constant shrink for contacts at various pitches and sizes. This shrink can be moderately adjusted and controlled by varying the mixing bake temperature which is generally and preferably below the glass transistion temperature of the resist, therefore no resist profile degradation is observed. A manufacturable process with a shrink of 20nm using RELACS at the contact layer is demonstrated. Utilizing an increased reticle bias in combination with an increased CD target prior to the chemical shrink, the common lithography process window at contact layer was increased by 0.15um. The results also indicate a possibility for an extension of the shrink to greater

  12. 90nm node contact hole patterning through applying model based OPC in KrF lithography

    NASA Astrophysics Data System (ADS)

    Jeon, Young-Doo; Lee, Sang-Uk; Choi, Jaeyoung; Kim, Jeahee; Han, Jaewon

    2008-03-01

    As semiconductor technologies move toward 90nm generation and below, contact hole is one of the most challenging features to print in the semiconductor manufacturing process. There are two principal difficulties in order to define small contact hole pattern on wafer. One is insufficient process margin besides poor resolution compared with line & space pattern. The other is that contact hole should be made through pitches and sometimes random contact hole pattern should be fabricated. Therefore advanced ArF lithography scanner should be used for small contact hole printing with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC(Optical Proximity Correction), PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), mask biasing and thermal flow. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest the method of contact holes patterning by using KrF lithography tool in 90nm sFlash(stand alone Flash)devices. For patterning of contact hole, we apply RETs which combine OAI and Model based OPC. Additionally, in this paper we present the result of hole pattern images which operate ArF lithography equipment. Also, this study describes comparison of two wafer images that ArF lithography process which is used mask biasing and Rule based OPC, KrF lithography process which is applied hybrid OPC.

  13. Using scanning electrochemical microscopy to probe chemistry at the solid-liquid interface in chemically amplified immersion lithography

    NASA Astrophysics Data System (ADS)

    LeSuer, Robert J.; Fan, Fu-Ren F.; Bard, Allen J.; Taylor, J. Christopher; Tsiartas, Pavlos; Willson, Grant; Conley, Willard E.; Feit, Gene; Kunz, Roderick R.

    2004-05-01

    Three modes of scanning electrochemical microscopy (SECM) - voltammetry, pH, and conductivity - have been used to better understand the chemistry at, and diffusion through, the solid/liquid interface formed between a resist film and water in 193 nm immersion lithography. Emphasis has been placed on investigating the photoacid generator (PAG), triphenylsulfonium perfluorobutanesulfonate, and the corresponding photoacid. The reduction of triphenylsulfonium at a hemispherical Hg microelectrode was monitored using square wave voltammetry to detect trace amounts of the PAG leaching from the surface. pH measurements at a 100 μm diameter Sb microelectrode show the formation of acid in the water layer above a resist upon exposure with UV irradiation. Bipolar conductance measurements at a 100 μm Pt tip positioned 100 μm from the surface indicate that the conductivity of the solution during illumination is dependent upon the percentage of PAG in the film. Liquid chromatography mass spectrometric analysis of water samples in contact with resist films has been used to quantify the amounts (< 10 ng/cm2) of PAG leaching from the film in the dark which occurs within the first 30 seconds of contact time. Washing the film removes approximately 80% of the total leachable PAG.

  14. Combining in-situ lithography with 3D printed solid immersion lenses for single quantum dot spectroscopy

    PubMed Central

    Sartison, Marc; Portalupi, Simone Luca; Gissibl, Timo; Jetter, Michael; Giessen, Harald; Michler, Peter

    2017-01-01

    In the current study, we report on the deterministic fabrication of solid immersion lenses (SILs) on lithographically pre-selected semiconductor quantum dots (QDs). We demonstrate the combination of state-of-the-art low-temperature in-situ photolithography and femtosecond 3D direct laser writing. Several QDs are pre-selected with a localization accuracy of less than 2 nm with low-temperature lithography and three-dimensional laser writing is then used to deterministically fabricate hemispherical lenses on top of the quantum emitter with a submicrometric precision. Due to the printed lenses, the QD light extraction efficiency is enhanced by a factor of 2, the pumping laser is focused more, and the signal-to-noise ratio is increased, leading to an improved localization accuracy of the QD to well below 1 nm. Furthermore, modifications of the QD properties, i.e. strain and variation of internal quantum efficiency induced by the printed lenses, are also reported. PMID:28057941

  15. Combining in-situ lithography with 3D printed solid immersion lenses for single quantum dot spectroscopy

    NASA Astrophysics Data System (ADS)

    Sartison, Marc; Portalupi, Simone Luca; Gissibl, Timo; Jetter, Michael; Giessen, Harald; Michler, Peter

    2017-01-01

    In the current study, we report on the deterministic fabrication of solid immersion lenses (SILs) on lithographically pre-selected semiconductor quantum dots (QDs). We demonstrate the combination of state-of-the-art low-temperature in-situ photolithography and femtosecond 3D direct laser writing. Several QDs are pre-selected with a localization accuracy of less than 2 nm with low-temperature lithography and three-dimensional laser writing is then used to deterministically fabricate hemispherical lenses on top of the quantum emitter with a submicrometric precision. Due to the printed lenses, the QD light extraction efficiency is enhanced by a factor of 2, the pumping laser is focused more, and the signal-to-noise ratio is increased, leading to an improved localization accuracy of the QD to well below 1 nm. Furthermore, modifications of the QD properties, i.e. strain and variation of internal quantum efficiency induced by the printed lenses, are also reported.

  16. Patterning 45nm flash/DRAM contact hole mask with hyper-NA immersion lithography and optimized illumination

    NASA Astrophysics Data System (ADS)

    Chen, Ting; Van Den Broeke, Doug; Hsu, Stephen; Park, Sangbong; Berger, Gabriel; Coskun, Tamer; de Vocht, Joep; Corcoran, Noel; Chen, Fung; van der Heijden, Eddy; Finders, Jo; Engelen, Andre; Socha, Robert

    2006-03-01

    Patterning contact-hole mask for Flash/DRAM is probably one of the most challenging tasks for design rule below 50nm due to the extreme low-k I printing conditions common in the memory designs. When combined with optical proximity corrections (OPC) to the mask, using optimized illumination has become a viable part of the production lithography process for 65nm node. At k I<0.31, both resolution and imaging contrast can become severely limited by some of the current imaging tools with NA<0.85 and using standard illumination sources. Hyper-NA immersion lithography increases the process latitude and is therefore expected to become more indispensable for manufacturing under extreme low-k I conditions for sub-50nm design rule. In this work, we describe our process optimization approach for patterning Flash/DRAM contact-hole patterns with 130nm, 120nm, and smaller minimum pitch design rules. Here we use 6% attPSM mask for simulation and actual exposure in ASML XT 1400i (NA=0.93) and 1700i (NA=1.2) respectively. We begin with the illumination source optimization using full vector high-NA calculation (VHNA) with production resist stack and all manufacturability requirements for the source shaping diffractive optical element (DOE) are accounted for during the source optimization. Using the optimized source, IML TM technology based scattering bars (SB) placement together with model based OPC (MOPC) are applied to the original contact-hole design. In-focus printing and process latitude simulations are used to gauge the performance and manufacturability of the final optimized process, which includes the optimized mask, optimized source and required imaging settings. Our results show that for the 130nm pitch Flash contact-hole patterns, on ASML XT 1400i at NA=0.93, both optimized illumination source and immersion lithography are necessary in order to achieve manufacturability. The worst-case depth of focus (DOF) before SB and MOPC is 100-130nm at 6% EL, without common process

  17. Advanced mask technique to improve bit line CD uniformity of 90 nm node flash memory in low-k1 lithography

    NASA Astrophysics Data System (ADS)

    Kim, Jong-doo; Choi, Jae-young; Kim, Jea-hee; Han, Jae-won

    2008-10-01

    As devices size move toward 90nm technology node or below, defining uniform bit line CD of flash devices is one of the most challenging features to print in KrF lithography. There are two principal difficulties in defining bit line on wafer. One is insufficient process margin besides poor resolution compared with ArF lithography. The other is that asymmetric bit line should be made for OPC(Optical Proximity Correction) modeling. Therefore advanced ArF lithography scanner should be used for define bit line with RETs (Resolution Enhancement Techniques) such as immersion lithography, OPC, PSM(Phase Shift Mask), high NA(Numerical Aperture), OAI(Off-Axis Illumination), SRAF(Sub-resolution Assistant Feature), and mask biasing.. Like this, ArF lithography propose the method of enhancing resolution, however, we must spend an enormous amount of CoC(cost of ownership) to utilize ArF photolithography process than KrF. In this paper, we suggest method to improve of bit line CD uniformity, patterned by KrF lithographic process in 90nm sFlash(stand alone Flash) devices. We applied new scheme of mask manufacturing, which is able to realize 2 different types of mask, binary and phase-shift, into one plate. Finally, we could get the more uniform bit lines and we expect to get more stable properties then before applying this technique.

  18. Across scanner platform optimization to enable EUV lithography at the 10-nm logic node

    NASA Astrophysics Data System (ADS)

    Mulkens, Jan; Karssenberg, Jaap; Wei, Hannah; Beckers, Marcel; Verstappen, Leon; Hsu, Stephen; Chen, Guangqin

    2014-04-01

    EUV lithography is expected to be introduced in volume manufacturing at the 10-nm and 7-nm node. Especially in these first EUV nodes, critical layer patterning will be balanced with the use of ArF immersion. As a consequence a good overlay and placement matching between both lithography methods becomes an enabling factor for EUV. In this paper we present an integral method to optimize critical layer patterning across the EUV and ArF scanner platform, such that good overlay and device pattern placement is achieved. It is discussed that besides classical overlay control methods, also the optimization of the ArF and EUV imaging steps is needed. Best matching is achieved by applying high-order field-to-field overlay corrections for both imaging and overlay. The lithography architecture we build for these higher order corrections connects the dynamic scanner actuators with the angle resolved scatterometer via a separate computational application server. Improvements of CD uniformity are based on source mask optimization for EUV combined with CD optimization using freeform intra-field dose actuator in the immersion scanner.

  19. Immersion and dry lithography monitoring for flash memories (after develop inspection and photo cell monitor) using a darkfield imaging inspector with advanced binning technology

    NASA Astrophysics Data System (ADS)

    Parisi, P.; Mani, A.; Perry-Sullivan, C.; Kopp, J.; Simpson, G.; Renis, M.; Padovani, M.; Severgnini, C.; Piacentini, P.; Piazza, P.; Beccalli, A.

    2009-12-01

    After-develop inspection (ADI) and photo-cell monitoring (PM) are part of a comprehensive lithography process monitoring strategy. Capturing defects of interest (DOI) in the lithography cell rather than at later process steps shortens the cycle time and allows for wafer re-work, reducing overall cost and improving yield. Low contrast DOI and multiple noise sources make litho inspection challenging. Broadband brightfield inspectors provide the highest sensitivity to litho DOI and are traditionally used for ADI and PM. However, a darkfield imaging inspector has shown sufficient sensitivity to litho DOI, providing a high-throughput option for litho defect monitoring. On the darkfield imaging inspector, a very high sensitivity inspection is used in conjunction with advanced defect binning to detect pattern issues and other DOI and minimize nuisance defects. For ADI, this darkfield inspection methodology enables the separation and tracking of 'color variation' defects that correlate directly to CD variations allowing a high-sampling monitor for focus excursions, thereby reducing scanner re-qualification time. For PM, the darkfield imaging inspector provides sensitivity to critical immersion litho defects at a lower cost-of-ownership. This paper describes litho monitoring methodologies developed and implemented for flash devices for 65nm production and 45nm development using the darkfield imaging inspector.

  20. Advanced patterning approaches based on negative-tone development (NTD) process for further extension of 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Shirakawa, Michihiro; Inoue, Naoki; Furutani, Hajime; Yamamoto, Kei; Goto, Akiyoshi; Fujita, Mitsuhiro

    2015-03-01

    Two approaches which achieve the further evolution of NTD (Negative Tone Development) process are shown in this article. One is ACCEL (Advanced Chemical Contrast Enhancement Layer) process that can improve the lithography performance and the other is DTD (Dual Tone Development) process that can shrink patterning pitch below the limit of single exposure process. ACCEL is an additionally provided layer which is coated on a surface of NTD resist film before exposure and removed by NTD developer. ACCEL can enhance the acid distribution and dissolution contrast of the NTD resist. In fact, lithography performances such as exposure latitude (EL) and DOF improved dramatically by applying ACCEL compared to the NTD resist without ACCEL. We consider that suppression of excessive acid diffusion and material transfer between the resist layer and the ACCEL layer are the causes of the contrast enhancement. DTD process is one of the simplest pitch shrink method which is achieved by repeating PTD and NTD process. Feasibility study of DTD patterning has been demonstrated so far. However, Exposure latitude margin and CDU performance were not sufficient for applying DTD to HVM. We developed the novel DTD specific resist under a new concept, and 32 nm half pitch (hp) contact hole (CH) pattern was successfully formed with enough margins. DTD line and space (L/S) patterning are also demonstrated and 24 nm hp L/S pattern can be resolved. k1 factors of DTD CH and L/S patterns reach to 0.20 and 0.15, respectively.

  1. Tumor suppressor ARF

    PubMed Central

    Través, Paqui G.; Luque, Alfonso; Hortelano, Sonsoles

    2012-01-01

    ARF (alternative reading frame) is one of the most important tumor regulator playing critical roles in controlling tumor initiation and progression. Recently, we have demonstrated a novel and unexpected role for ARF as modulator of inflammatory responses. PMID:23162766

  2. Study on RLS trade-off resist upgrade for production ready EUV lithography

    NASA Astrophysics Data System (ADS)

    Lee, Junghyung; Kim, Jieun; Jeong, Seunguk; Lim, Mijung; Koo, Sunyoung; Lim, Chang-Moon; Kim, Young-Sik

    2016-03-01

    Extreme Ultraviolet (EUV) is the most promising technology as substitute for multiple patterning based on ArF immersion lithography. If enough productivity can be accomplished, EUV will take main role in the chip manufacturing. Since the introduction of NXE3300, many significant results have been achieved in source power and availability, but lots of improvements are still required in various aspects for the implementation of EUV lithography on high volume manufacturing. Among them, it is especially important to attain high sensitivity resist without degrading other resolution performance. In this paper, performances of various resists were evaluated with real device patterns on NXE3300 scanner and technical progress of up-to-date EUV resists will be shown by comparing with the performance of their predecessors. Finally the prospect of overcoming the triangular trade-off between sensitivity, resolution, line edge roughness (LER) and achieving high volume manufacturing will be discussed.

  3. Extending lithography with advanced materials

    NASA Astrophysics Data System (ADS)

    Guerrero, Douglas J.

    2014-03-01

    Material evolution has been a key enabler of lithography nodes in the last 30 years. This paper explores the evolution of anti-reflective coatings and their transformation from materials that provide only reflection control to advanced multifunctional layers. It is expected that complementary processes that do not require a change in wavelength will continue to dominate the development of new devices and technology nodes. New device architecture, immersion lithography, negative-tone development, multiple patterning, and directed self-assembly have demonstrated the capabilities of extending lithography nodes beyond what anyone thought would be possible. New material advancements for future technology nodes are proposed.

  4. Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist processes: II. Stochastic effects

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro

    2015-09-01

    Electron beam (EB) lithography is a core technology for nanofabrication. Owing to the increasing demand for high-resolution semiconductor lithography, the requirements for the resist processes of EB lithography for the photomasks used in ArF immersion and extreme ultraviolet lithographies and the mold fabrication of nanoimprints have also become stricter. In this study, the feasibility of single nano patterning by EB lithography with a chemically amplified resist process was investigated from the viewpoint of stochastic effects. The latent images of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) were calculated using a Monte Carlo method on the basis of the sensitization and reaction mechanisms of chemically amplified EB resists. Compared with the line-and-space pattern with a 7 nm half-pitch, line edge roughness (LER) and the stochastic pinching generation are considered to be significantly improved by increasing the pitch. It was found that the suppression of the stochastic generation of bridges is the critical issue in 7 nm quarter-pitch fabrication.

  5. An ice lithography instrument.

    PubMed

    Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J A

    2011-06-01

    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines.

  6. An ice lithography instrument

    SciTech Connect

    Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J. A.

    2011-06-15

    We describe the design of an instrument that can fully implement a new nanopatterning method called ice lithography, where ice is used as the resist. Water vapor is introduced into a scanning electron microscope (SEM) vacuum chamber above a sample cooled down to 110 K. The vapor condenses, covering the sample with an amorphous layer of ice. To form a lift-off mask, ice is removed by the SEM electron beam (e-beam) guided by an e-beam lithography system. Without breaking vacuum, the sample with the ice mask is then transferred into a metal deposition chamber where metals are deposited by sputtering. The cold sample is then unloaded from the vacuum system and immersed in isopropanol at room temperature. As the ice melts, metal deposited on the ice disperses while the metals deposited on the sample where the ice had been removed by the e-beam remains. The instrument combines a high beam-current thermal field emission SEM fitted with an e-beam lithography system, cryogenic systems, and a high vacuum metal deposition system in a design that optimizes ice lithography for high throughput nanodevice fabrication. The nanoscale capability of the instrument is demonstrated with the fabrication of nanoscale metal lines.

  7. Improved Nanogap Servo System Using an Error-Based Disturbance Observer for High-Speed in Solid Immersion Lens-Based Plasmonic Lithography

    NASA Astrophysics Data System (ADS)

    Lim, Geon; Kim, Taeseob; Lee, Won-Sup; Choi, Guk-Jong; Park, Kyoung-Su; Park, Young-Pil; Yang, Hyunseok; Park, No-Cheol

    2013-09-01

    We proposed an advanced nanogap servo system using the error-based disturbance observer (EDOB) system. To achieve the feedback control over the nanogap based on the gap error signal (GES) in the near-field region, a precise gap-curve was obtained experimentally between a solid immersion lens and a photoresist-coated wafer using a piezo nanoposition actuator. With an accurate nanogap servo system, the EDOB was designed with a low-pass filter of 2.0 kHz bandwidth. Due to the powerful properties of the EDOB, which include stable robustness and disturbance rejection, a high-speed nanogap servo was achieved with up to 400 and 300 mm/s at the desired gaps of 20 and 15 nm, respectively. The disturbance rejection performance was evaluated from the GES, and the maximum deviation value was reduced by approximately 40% over that of the servo system without the EDOB.

  8. Immersion lithography with an ultrahigh-NA in-line catadioptric lens and a high-transmission flexible polarization illumination system

    NASA Astrophysics Data System (ADS)

    Jasper, Hans; Modderman, Theo; van de Kerkhof, Mark; Wagner, Christian; Mulkens, Jan; de Boeij, Wim; van Setten, Eelco; Kneer, Bernhard

    2006-03-01

    A second phase in the immersion era is starting with the introduction of ultra high NA (NA >1) systems. These systems are targeting for 45 nm node device production and beyond. ASML TWINSCAN XT:1700i features a maximum NA of 1.2 and a 26x33 mm2 scanner field size. The projection lens is an in-line catadioptric lens design and the AERIAL XP illumination system enables conventional an off-axis illumination pupil shapes in either polarized or un-polarized modes at maximum light efficiency. In this paper a description and a performance overview of the TWINSCAN XT:1700i is given. We will present and discuss lithographic performance results, with special attention at low-k1 imaging using high NA and polarized illumination. Overlay, focus and productivity performance will also be presented.

  9. Optimizing the lithography model calibration algorithms for NTD process

    NASA Astrophysics Data System (ADS)

    Hu, C. M.; Lo, Fred; Yang, Elvis; Yang, T. H.; Chen, K. C.

    2016-03-01

    As patterns shrink to the resolution limits of up-to-date ArF immersion lithography technology, negative tone development (NTD) process has been an increasingly adopted technique to get superior imaging quality through employing bright-field (BF) masks to print the critical dark-field (DF) metal and contact layers. However, from the fundamental materials and process interaction perspectives, several key differences inherently exist between NTD process and the traditional positive tone development (PTD) system, especially the horizontal/vertical resist shrinkage and developer depletion effects, hence the traditional resist parameters developed for the typical PTD process have no longer fit well in NTD process modeling. In order to cope with the inherent differences between PTD and NTD processes accordingly get improvement on NTD modeling accuracy, several NTD models with different combinations of complementary terms were built to account for the NTD-specific resist shrinkage, developer depletion and diffusion, and wafer CD jump induced by sub threshold assistance feature (SRAF) effects. Each new complementary NTD term has its definite aim to deal with the NTD-specific phenomena. In this study, the modeling accuracy is compared among different models for the specific patterning characteristics on various feature types. Multiple complementary NTD terms were finally proposed to address all the NTD-specific behaviors simultaneously and further optimize the NTD modeling accuracy. The new algorithm of multiple complementary NTD term tested on our critical dark-field layers demonstrates consistent model accuracy improvement for both calibration and verification.

  10. New spin-on metal hardmask materials for lithography processes

    NASA Astrophysics Data System (ADS)

    Yao, Huirong; Mullen, Salem; Wolfer, Elizabeth; Rahman, Dalil; Anyadiegwu, Clement; Mckenzie, Douglas; Dioses, Alberto; Cho, Joonyeon; Padmanaban, Munirathna

    2013-03-01

    Since the critical dimensions in integrated circuit (IC) device fabrication continue to shrink below 32 nm, multilayer stacks with alternating etch selectivities are required for successful pattern transfer from the exposed photoresist to the substrate. Inorganic resist underlayer materials are used as hard masks in reactive ion etching (RIE) with oxidative gases. The conventional silicon hardmask has demonstrated good reflectivity control and reasonable etch selectivity. However, some issues such as the rework of trilayer stacks and cleaning of oxide residue by wet chemistry are challenging problems for manufacturability. The present work reveals novel spin-on underlayer materials containing significant amounts of metal oxides in the film after baking at normal processing conditions. Such an inorganic metal hardmask (MHM) has excellent etch selectivity in plasma etch processes of the trilayer stack. The composition has good long term shelf life and pot life stability based on solution LPC analysis and wafer defect studies, respectively. The material absorbs DUV wavelengths and can be used as a spin-on inorganic or hybrid antireflective coating to control substrate reflectivity under DUV exposure of photoresist. Some of these metal-containing materials can be used as an underlayer in EUV lithography to significantly enhance photospeed. Specific metal hard masks are also developed for via or trench filling applications in IRT processes. The materials have shown good coating and lithography performance with a film thicknesses as low as 10 nm under ArF dry or immersion conditions. In addition, the metal oxide films or residues can be partially or completely removed by using various wet-etching solutions at ambient temperature.

  11. The study of lithography conditions to use advanced resist performance properly

    NASA Astrophysics Data System (ADS)

    Yang, Zhengkai; Wang, Wuping; Chen, Quan; Aoyama, Hajime; Takemasa, Kengo; Sei, Toshihiko; Miyazawa, Tami; Matsuyama, Tomoyuki; Shao, Chun

    2015-03-01

    Correlation of resist modeling of printed features with lithographic data is a necessary part of developing new lithographic processes. Recently, we have found a case in which the most advanced resist types sometimes show better behavior than expectations from optical simulation in terms of dose latitude, MEEF (mask error enhancement factor), and even CD variation through different pitches. This superior resist performance may allow greater margin for error in each component, such as mask, scanner, and metrology in very low-k1 lithography. On the other hand, since the resist pattern CD for the most advanced resist is very much different from the prediction of optical simulation, it is a challenge to build OPC models using the exposure result with the resist. In order to solve this issue, we have tried to use several litho parameters to reduce the gap between optical simulation and resist CDs for OPC modeling. In this paper we discuss the effect of the parameters to reduce the gap between optical model and actual resist behavior with keeping superior performance as much as possible. The method we mention may be a key to use the most advanced resist in near future. As a result the life of ArF immersion lithography in the critical layer would be extended than we expect today.

  12. Below 70-nm contact hole pattern with RELACS process on ArF resist

    NASA Astrophysics Data System (ADS)

    Terai, Mamoru; Toyoshima, Toshiyuki; Ishibashi, Takeo; Tarutani, Shinji; Takahashi, Kiyohisa; Takano, Yusuke; Tanaka, Hatsuyuki

    2003-06-01

    A chemical shrink technology, RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink), utilizes the cross linking reaction catalyzed by the acid component existing in a predefined resist pattern. This "RELACS" process is a hole shrinking procedure that includes simple coating, baking, and rinsing applied after conventional photolithography. Our target is realize of sub-70nm hole pattern formation by using new RELACS for ArF resist. At present, RELACS process is introduced to mass production of KrF lithography by using AZ R200 (Product name of Clariant) mainly. Then first of all we reported process performance of conventional RELACS material, AZ R200 with ArF resist. However AZ R200 does not show satisfactory shrinkage on ArF resist. Thereupon, we started on the development of new RELACS corresponding to ArF resist. As the result, we developed new RELACS material including Cross Linking Accelerator (CLA). It was found that CLA is able to improve reactivity of RELACS with ArF-resist. By using this new RELACS, It is Realized sub-70nm hole pattern formation with ArF-Ex lithography and It is able to Control of hole size by mixing bake (MB) temperature and additive ratio of CLA. Moreover this process was realized that thickness of shrunk hole is increased.

  13. Litho-freeze-litho-etch (LFLE) enabling dual wafer flow coat/develop process and freeze CD tuning bake for >200wph immersion ArF photolithography double patterning

    NASA Astrophysics Data System (ADS)

    Pieczulewski, Charles N.; Rosslee, Craig A.

    2009-12-01

    The SOKUDO DUO track system incorporates a dual-path wafer flow to reduce the burden on the wafer handling unit and enables high-throughput coat/develop/bake processing in-line with semiconductor photolithography exposure (scanner) equipment. Various photolithography-based double patterning process flows were modeled on the SOKUDO DUO system and it was confirmed to be able to process both Litho-Process-Litho-Etch (LPLE)*2 and negative-tone develop process wafers at greater than 200 wafer-per-hour (wph) capability for each litho-pass through the in-line exposure tool. In addition, it is demonstrated that Biased Hot Plates (BHP) with "cdTune" software improves litho pattern #1 and litho pattern #2 within wafer CD uniformity. Based primarily on JSR Micro materials for Litho-Freeze- Litho-Etch (LFLE) the coat, develop and bake process CD uniformity improvement results are demonstrated on the SOKUDO RF3S immersion track in-line with ASML XT:1900Gi system at IMEC, Belgium.

  14. Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: III. Post exposure baking on quartz substrates

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro

    2015-09-01

    Electron beam (EB) lithography is a key technology for the fabrication of photomasks for ArF immersion and extreme ultraviolet (EUV) lithography and molds for nanoimprint lithography. In this study, the temporal change in the chemical gradient of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) was calculated until it became constant, independently of postexposure baking (PEB) time, to clarify the feasibility of single nano patterning on quartz substrates using EB lithography with chemically amplified resist processes. When the quencher diffusion constant is the same as the acid diffusion constant, the maximum chemical gradient of the line-and-space pattern with a 7 nm quarter-pitch did not differ much from that with a 14 nm half-pitch under the condition described above. Also, from the viewpoint of process control, a low quencher diffusion constant is considered to be preferable for the fabrication of line-and-space patterns with a 7 nm quarter-pitch on quartz substrates.

  15. Coaxial Lithography

    NASA Astrophysics Data System (ADS)

    Ozel, Tuncay

    The optical and electrical properties of heterogeneous nanowires are profoundly related to their composition and nanoscale architecture. However, the intrinsic constraints of conventional synthetic and lithographic techniques have limited the types of multi-compositional nanowires that can be realized and studied in the laboratory. This thesis focuses on bridging templated electrochemical synthesis and lithography for expanding current synthetic capabilities with respect to materials generality and the ability to tailor two-dimensional growth in the formation of core-shell structures for the rational design and preparation of nanowires with very complex architectures that cannot be made by any other techniques. Chapter 1 introduces plasmonics, templated electrochemical synthesis, and on-wire lithography concepts and their significances within chemistry and materials science. Chapter 2 details a powerful technique for the deposition of metals and semiconductors with nanometer resolution in segment and gap lengths using on-wire lithography, which serves as a new platform to explore plasmon-exciton interactions in the form of long-range optical nanoscale rulers. Chapter 3 highlights an approach for the electrochemical synthesis of solution dispersible core-shell polymeric and inorganic semiconductor nanowires with metallic leads. A photodetector based on a single core-shell semiconductor nanowire is presented to demonstrate the functionality of the nanowires produced using this approach. Chapter 4 describes a new materials general technique, termed coaxial lithography (COAL), bridging templated electrochemical synthesis and lithography for generating coaxial nanowires in a parallel fashion with sub-10 nanometer resolution in both axial and radial dimensions. Combinations of coaxial nanowires composed of metals, metal oxides, metal chalcogenides, conjugated polymers, and a core/shell semiconductor nanowire with an embedded plasmonic nanoring are presented to

  16. Source mask optimization study based on latest Nikon immersion scanner

    NASA Astrophysics Data System (ADS)

    Zhu, Jun; Wei, Fang; Chen, Lijun; Zhang, Chenming; Zhang, Wei; Nishinaga, Hisashi; El-Sewefy, Omar; Gao, Gen-Sheng; Lafferty, Neal; Meiring, Jason; Zhang, Recoo; Zhu, Cynthia

    2016-03-01

    The 2x nm logic foundry node has many challenges since critical levels are pushed close to the limits of low k1 ArF water immersion lithography. For these levels, improvements in lithographic performance can translate to decreased rework and increased yield. Source Mask Optimization (SMO) is one such route to realize these image fidelity improvements. During SMO, critical layout constructs are intensively optimized in both the mask and source domain, resulting in a solution for maximum lithographic entitlement. From the hardware side, advances in source technology have enabled free-form illumination. The approach allows highly customized illumination, enabling the practical application of SMO sources. The customized illumination sources can be adjusted for maximum versatility. In this paper, we present a study on a critical layer of an advanced foundry logic node using the latest ILT based SMO software, paired with state-of-the-art scanner hardware and intelligent illuminator. Performance of the layer's existing POR source is compared with the ideal SMO result and the installed source as realized on the intelligent illuminator of an NSR-S630D scanner. Both simulation and on-silicon measurements are used to confirm that the performance of the studied layer meets established specifications.

  17. Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation

    SciTech Connect

    Jinnai, Butsurin; Koyama, Koji; Kato, Keisuke; Yasuda, Atsushi; Momose, Hikaru; Samukawa, Seiji

    2009-03-01

    ArF excimer laser lithography was introduced to fabricate nanometer-scale devices and uses chemically amplified photoresist polymers including photoacid generators (PAGs). Because plasma-etching processes cause serious problems related to the use of ArF photoresists, such as line-edge roughness and low etching selectivity, we have to understand the interaction between plasma and ArF photoresist polymers. Investigating the effects of surface temperature and the irradiation species from plasma, we have found that ion irradiation by itself did not drastically increase the roughness or etching rate of ArF photoresist films unless it was combined with ultraviolet/vacuum ultraviolet (UV/VUV) photon irradiation. The structures of ArF photoresist polymers were largely unchanged by ion irradiation alone but were destroyed by combinations of ion and UV/VUV-photon irradiation. Our results suggested that PAG-mediated deprotection induced by UV/VUV-photon irradiation was amplified at surface temperatures above 100 deg. C. The etching rate and surface roughness of plasma-etched ArF photoresists are affected by the irradiation species and surface temperature during plasma etching. UV/VUV-photon irradiation plays a particularly important role in the interaction between plasma and ArF photoresist polymers.

  18. Expected innovations of optical lithography in the next 10 years

    NASA Astrophysics Data System (ADS)

    Owa, Soichi; Hirayanagi, Noriyuki

    2016-03-01

    In the past 10 years, immersion lithography has been the most effective high volume manufacturing method for the critical layers of semiconductor devices. Thinking of the next 10 years, we can expect continuous improvement on existing 300 mm wafer scanners with better accuracy and throughput to enhance the total output value per input cost. This value productivity, however, can be upgraded also by larger innovations which might happen in optical lithography. In this paper, we will discuss the possibilities and the impossibilities of potential innovation ideas of optical lithography, which are 450 mm wafer, optical maskless, multicolor lithography, and metamaterial.

  19. The Drosophila Arf1 homologue Arf79F is essential for lamellipodium formation

    PubMed Central

    Humphreys, Daniel; Liu, Tao; Davidson, Anthony C.; Hume, Peter J.; Koronakis, Vassilis

    2012-01-01

    Summary The WAVE regulatory complex (WRC) drives the polymerisation of actin filaments located beneath the plasma membrane to generate lamellipodia that are pivotal to cell architecture and movement. By reconstituting WRC-dependent actin assembly at the membrane, we recently discovered that several classes of Arf family GTPases directly recruit and activate WRC in cell extracts, and that Arf cooperates with Rac1 to trigger actin polymerisation. Here, we demonstrate that the Class 1 Arf1 homologue Arf79F colocalises with the WRC at dynamic lamellipodia. We report that Arf79F is required for lamellipodium formation in Drosophila S2R+ cells, which only express one Arf isoform for each class. Impeding Arf function either by dominant-negative Arf expression or by Arf double-stranded RNA interference (dsRNAi)-mediated knockdown uncovered that Arf-dependent lamellipodium formation was specific to Arf79F, establishing that Class 1 Arfs, but not Class 2 or Class 3 Arfs, are crucial for lamellipodia. Lamellipodium formation in Arf79F-silenced cells was restored by expressing mammalian Arf1, but not by constitutively active Rac1, showing that Arf79F does not act via Rac1. Abolition of lamellipodium formation in Arf79F-silenced cells was not due to Golgi disruption. Blocking Arf79F activation with guanine nucleotide exchange factor inhibitors impaired WRC localisation to the plasma membrane and concomitant generation of lamellipodia. Our data indicate that the Class I Arf GTPase is a central component in WRC-driven lamellipodium formation. PMID:22992458

  20. A novel ARF-binding protein (LZAP) alters ARF regulation of HDM2.

    PubMed

    Wang, Jialiang; He, Xiaping; Luo, Ying; Yarbrough, Wendell G

    2006-01-15

    The tumour suppressor ARF (alternative reading frame) is encoded by the INK4a (inhibitor of cyclin-dependent kinase 4)/ARF locus, which is frequently altered in human tumours. ARF binds MDM2 (murine double minute 2) and releases p53 from inhibition by MDM2, resulting in stabilization, accumulation and activation of p53. Recently, ARF has been found to associate with other proteins, but, to date, little is known about ARF-associated proteins that are implicated in post-translational regulation of ARF activity. Using a yeast two-hybrid screen, we have identified a novel protein, LZAP (LXXLL/leucine-zipper-containing ARF-binding protein), that interacts with endogenous ARF in mammalian cells. In the present study, we show that LZAP reversed the ability of ARF to inhibit HDM2's ubiquitin ligase activity towards p53, but simultaneously co-operated with ARF, maintaining p53 stability and increasing p53 transcriptional activity. Expression of LZAP, in addition to ARF, increased the percentage of cells in the G1 phase of the cell cycle. Expression of LZAP also caused activation of p53 and a p53-dependent G1 cell-cycle arrest in the absence of ARF. Taken together, our data suggest that LZAP can regulate ARF biochemical and biological activity. Additionally, LZAP has p53-dependent cell-cycle effects that are independent of ARF.

  1. A novel ARF-binding protein (LZAP) alters ARF regulation of HDM2

    PubMed Central

    Wang, Jialiang; He, Xiaping; Luo, Ying; Yarbrough, Wendell G.

    2005-01-01

    The tumour suppressor ARF (alternative reading frame) is encoded by the INK4a (inhibitor of cyclin-dependent kinase 4)/ARF locus, which is frequently altered in human tumours. ARF binds MDM2 (murine double minute 2) and releases p53 from inhibition by MDM2, resulting in stabilization, accumulation and activation of p53. Recently, ARF has been found to associate with other proteins, but, to date, little is known about ARF-associated proteins that are implicated in post-translational regulation of ARF activity. Using a yeast two-hybrid screen, we have identified a novel protein, LZAP (LXXLL/leucine-zipper-containing ARF-binding protein), that interacts with endogenous ARF in mammalian cells. In the present study, we show that LZAP reversed the ability of ARF to inhibit HDM2's ubiquitin ligase activity towards p53, but simultaneously co-operated with ARF, maintaining p53 stability and increasing p53 transcriptional activity. Expression of LZAP, in addition to ARF, increased the percentage of cells in the G1 phase of the cell cycle. Expression of LZAP also caused activation of p53 and a p53-dependent G1 cell-cycle arrest in the absence of ARF. Taken together, our data suggest that LZAP can regulate ARF biochemical and biological activity. Additionally, LZAP has p53-dependent cell-cycle effects that are independent of ARF. PMID:16173922

  2. Option of resolution enhancement technology in advanced lithography

    NASA Astrophysics Data System (ADS)

    Li, Yanqui; Zhou, Yuan

    2007-12-01

    Hyper-numerical aperture ArF scanner has being designed to meet the needs of 45nm node. Resolution enhancement technology, such as phase shift mask, off-axis illumination, and innovation processing technology must be employed in hyper-numerical aperture ArF lithography. However the cross talk of phase shift mask, off axis illumination, polarization effect, and resist stack impacts lithography performance significantly. Option of resolution enhancement technology is presented in conjunction with optimal dual-layers bottom anti-refactive coating and polarized illumination by our program and Prolith 9.0. Multi options of resolution enhancement technology are obtained to maintain a small CD, good CD uniformity (CDU), reasonable process window (PW) and fidelity of resist profile.

  3. Implementation of assist features in EUV lithography

    NASA Astrophysics Data System (ADS)

    Jiang, Fan; Burkhardt, Martin; Raghunathan, Ananthan; Torres, Andres; Gupta, Rachit; Word, James

    2015-03-01

    The introduction of EUV lithography will happen at a critical feature pitch which corresponds to a k1 factor of roughly 0.45. While this number seems not very aggressive compared to recent ArF lithography nodes, the number is sufficiently low that the introduction of assist features has to be considered. While the small NA makes the k1 factor larger, the depth of focus still needs to be scaled down with wavelength. However the exposure tool's focus control is not greatly improved over the ArF tools, so other solutions to improve the depth of focus, e.g. SRAFs, are needed. On the other hand, sub-resolution assist features (SRAFs) require very small mask dimensions, which make masks more costly to write and inspect. Another disadvantage of SRAFs is the fact that they may cause pattern-dependent best focus shift due to thick mask effects. Those effects can be predicted, but the shift of best focus and the associated tilt of Bossung curves make the process more difficult to control. We investigate the impact of SRAFs on printing in EUV lithography and evaluate advantages and disadvantages. By using image quality parameters such as best focus (BF), and depth of focus (DOF), respectively with and without SRAFs, we will answer the question if we can gain a net benefit for 1D and 2D patterns by adding SRAFs. SRAFs will only be introduced if any net improvement in process variation (PV) outweighs the additional expense of assist patterning on the mask. In this paper, we investigate the difference in printing behavior of symmetric and asymmetric SRAF placement and whether through slit effect needs to be considered in SRAF placement for EUV lithography.

  4. Coaxial lithography.

    PubMed

    Ozel, Tuncay; Bourret, Gilles R; Mirkin, Chad A

    2015-04-01

    The optical and electrical properties of heterogeneous nanowires are profoundly related to their composition and nanoscale architecture. However, the intrinsic constraints of conventional synthetic and lithographic techniques have limited the types of multi-compositional nanowire that can be created and studied in the laboratory. Here, we report a high-throughput technique that can be used to prepare coaxial nanowires with sub-10 nm control over the architectural parameters in both axial and radial dimensions. The method, termed coaxial lithography (COAL), relies on templated electrochemical synthesis and can create coaxial nanowires composed of combinations of metals, metal oxides, metal chalcogenides and conjugated polymers. To illustrate the possibilities of the technique, a core/shell semiconductor nanowire with an embedded plasmonic nanoring was synthesized--a structure that cannot be prepared by any previously known method--and its plasmon-excitation-dependent optoelectronic properties were characterized.

  5. VUV lithography

    DOEpatents

    George, Edward V.; Oster, Yale; Mundinger, David C.

    1990-01-01

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

  6. VUV lithography

    DOEpatents

    George, E.V.; Oster, Y.; Mundinger, D.C.

    1990-12-25

    Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

  7. Defect transfer from immersion exposure process to etching process using novel immersion exposure and track system

    NASA Astrophysics Data System (ADS)

    Miyahara, Osamu; Kosugi, Hitoshi; Dunn, Shannon; van Dommelen, Youri; Grouwstra, Cedric

    2008-11-01

    For lithography technology to support the scaling down of semiconductor devices, 193-nm immersion exposure processing is being introduced to mass-production at a rapid pace. At the same time, there are still many unclear areas and many concerns to be addressed with regards to defects in 193-nm immersion lithography. To make 193-nm immersion lithography technology practical for mass production, it is essential that the defect problems be solved. Importance must be attached to understanding the conditions that give rise to defects and their transference in the steps between lithography and etching processes. It is apparent that double patterning (DP) will be the mainstream technology below 40nm node. It can be assumed that the risk of the defect generation will rise, because the number of the litho processing steps will be increased in DP. Especially, in the case of Litho-Etch-Litho-Etch (LELE) process, the concept of defect transfer becomes more important because etch processing is placed between each litho processing step. In this paper, we use 193-nm immersion lithography processing to examine the defect transference from lithography through the etching process for a representative 45nm metal layer substrate stack for device manufacturing. It will be shown which types of defects transfer from litho to etch and become killer defects.

  8. Photomask cleaning process improvement to minimize ArF haze

    NASA Astrophysics Data System (ADS)

    Graham, Michael; McDonald, Andrew

    2008-04-01

    Growth of "haze" defects on photomasks exposed in ArF lithography is recognized as a serious problem. Haze defects that have grown to detectable sizes can be analysed in situ by techniques such as EDX or Raman, but to analyze at the photomask manufacturing stage requires extraction of residues by solution in DI water. The effect of extraction conditions, including surface area and material, water volume, time, and temperature, has been studied. A standard method to compare residual ion levels is proposed. Various methods for reducing residual ion levels from the photomask cleaning process have been published. These include SPM reduction, oxygen plasma, SC1 dilution, Megasonic agitation, hot rinse, UV exposure, thermal bake, ozone water, ozone gas, and hydrogenated water. Critical parameters for the cleaning process, besides residual ion levels and contamination removal efficiency, include CD shift, AR/chrome damage, scatter bar damage, and on phase shift masks, the change in phase and transmission. An optimized process combining conventional and novel techniques is described. Data is presented to show the importance of controlling all resist strip and clean processes, not just the final clean. It has achieved sulphate levels of 0.2ng/cm2 (well below the critical level for haze growth), as well as improved results for the other critical parameters. This process has been demonstrated to allow ArF exposure of large numbers of wafers without the appearance of haze defects.

  9. EUV lithography

    NASA Astrophysics Data System (ADS)

    Kemp, Kevin; Wurm, Stefan

    2006-10-01

    Extreme ultraviolet lithography (EUVL) technology and infrastructure development has made excellent progress over the past several years, and tool suppliers are delivering alpha tools to customers. However, requirements in source, mask, optics, and resist are very challenging, and significant development efforts are still needed to support beta and production-level performance. Some of the important advances in the past few years include increased source output power, tool and optics system development and integration, and mask blank defect reduction. For example, source power has increased to levels approaching specification, but reliable source operation at these power levels has yet to be fully demonstrated. Significant efforts are also needed to achieve the resolution, line width roughness, and photospeed requirements for EUV photoresists. Cost of ownership and extendibility to future nodes are key factors in determining the outlook for the manufacturing insertion of EUVL. Since wafer throughput is a critical cost factor, source power, resist sensitivity, and system design all need to be carefully considered. However, if the technical and business challenges can be met, then EUVL will be the likely technology of choice for semiconductor manufacturing at the 32, 22, 16 and 11 nm half-pitch nodes. To cite this article: K. Kemp, S. Wurm, C. R. Physique 7 (2006).

  10. Metrology for Grayscale Lithography

    SciTech Connect

    Murali, Raghunath

    2007-09-26

    Three dimensional microstructures find applications in diffractive optical elements, photonic elements, etc. and can be efficiently fabricated by grayscale lithography. Good process control is important for achieving the desired structures. Metrology methods for grayscale lithography are discussed. Process optimization for grayscale e-beam lithography is explored and various process parameters that affect the grayscale process are discussed.

  11. Arf proteins in cancer cell migration

    PubMed Central

    Casalou, Cristina; Faustino, Alexandra; Barral, Duarte C.

    2016-01-01

    ABSTRACT Members of the ADP-ribosylation factor (Arf) family of small GTP-binding (G) proteins regulate several aspects of membrane trafficking, such as vesicle budding, tethering and cytoskeleton organization. Arf family members, including Arf-like (Arl) proteins have been implicated in several essential cellular functions, like cell spreading and migration. These functions are used by cancer cells to disseminate and invade the tissues surrounding the primary tumor, leading to the formation of metastases. Indeed, Arf and Arl proteins, as well as their guanine nucleotide exchange factors (GEFs) and GTPase-activating proteins (GAPs) have been found to be abnormally expressed in different cancer cell types and human cancers. Here, we review the current evidence supporting the involvement of Arf family proteins and their GEFs and GAPs in cancer progression, focusing on 3 different mechanisms: cell-cell adhesion, integrin internalization and recycling, and actin cytoskeleton remodeling. PMID:27589148

  12. Evaluation of a novel photoacid generator for chemically amplified photoresist with ArF exposure

    NASA Astrophysics Data System (ADS)

    Asakura, Toshikage; Yamato, Hitoshi; Hintermann, Tobias; Ohwa, Masaki

    2005-05-01

    Recently we have developed a novel non-ionic photoacid generator (PAG), 2-[2,2,3,3,4,4,5,5,6,6,7,7-dodecafluoro-1-(nonafluorobutylsulfonyloxyimino)-heptyl]-fluorene (DNHF), which generates a strong acid (perfluorobutanesulfonic acid) by light irradiation and is applicable to chemically amplified ArF photoresist. The studies on quantum yield of the PAG under 193 nm exposure in an ArF model formulation and in a solution comparing with the ones of ionic PAGs, triphenylsulfonium perfluorobutanesulfonate (TPSPB) and Bis(4-tert-butylphenyl)iodonium perfluorobutanesulfonate (BPIPB) revealed that this compound is superior in photo efficiency to the others. PAG leaching into water from the resist during a model immersion process was investigated in detail. No leaching of DNHF was observed under the immersion process while significant amount of TPSBP was eluted. Dissolution rate of the resist prepared under a model condition of ArF immersion exposure was monitored. No clear difference against dry condition was observed.

  13. Neon reduction program on Cymer ArF light sources

    NASA Astrophysics Data System (ADS)

    Kanawade, Dinesh; Roman, Yzzer; Cacouris, Ted; Thornes, Josh; O'Brien, Kevin

    2016-03-01

    In response to significant neon supply constraints, Cymer has responded with a multi-part plan to support its customers. Cymer's primary objective is to ensure that reliable system performance is maintained while minimizing gas consumption. Gas algorithms were optimized to ensure stable performance across all operating conditions. The Cymer neon support plan contains four elements: 1. Gas reduction program to reduce neon by >50% while maintaining existing performance levels and availability; 2. short-term containment solutions for immediate relief. 3. qualification of additional gas suppliers; and 4. long-term recycling/reclaim opportunity. The Cymer neon reduction program has shown excellent results as demonstrated through the comparison on standard gas use versus the new >50% reduced neon performance for ArF immersion light sources. Testing included stressful conditions such as repetition rate, duty cycle and energy target changes. No performance degradation has been observed over typical gas lives.

  14. Dynamics of ARF regulation that control senescence and cancer

    PubMed Central

    Ko, Aram; Han, Su Yeon; Song, Jaewhan

    2016-01-01

    ARF is an alternative reading frame product of the INK4a/ARF locus, inactivated in numerous human cancers. ARF is a key regulator of cellular senescence, an irreversible cell growth arrest that suppresses tumor cell growth. It functions by sequestering MDM2 (a p53 E3 ligase) in the nucleolus, thus activating p53. Besides MDM2, ARF has numerous other interacting partners that induce either cellular senescence or apoptosis in a p53-independent manner. This further complicates the dynamics of the ARF network. Expression of ARF is frequently disrupted in human cancers, mainly due to epigenetic and transcriptional regulation. Vigorous studies on various transcription factors that either positively or negatively regulate ARF transcription have been carried out. However, recent focus on posttranslational modifications, particularly ubiquitination, indicates wider dynamic controls of ARF than previously known. In this review, we discuss the role and dynamic regulation of ARF in senescence and cancer. PMID:27470213

  15. ARAP1 regulates the ring size of circular dorsal ruffles through Arf1 and Arf5

    PubMed Central

    Hasegawa, Junya; Tsujita, Kazuya; Takenawa, Tadaomi; Itoh, Toshiki

    2012-01-01

    Small guanosine triphosphatase (GTPase) ADP-ribosylation factors (Arfs) regulate membrane traffic and actin reorganization under the strict control of GTPase-activating proteins (GAPs). ARAP1 (Arf GAP with Rho GAP domain, ankyrin repeat, and PH domain 1) is an Arf GAP molecule with multiple PH domains that recognize phosphatidylinositol 3,4,5-trisphosphate. We found that growth factor stimulation induced localization of ARAP1 to an area of the plasma membrane inside the ring structure of circular dorsal ruffles (CDRs). Moreover, expression of ARAP1 increased the size of the CDR filamentous-actin ring in an Arf GAP activity–dependent manner, whereas smaller CDRs were formed by ARAP1 knockdown. In addition, expression of a dominant-negative mutant of Arf1 and Arf5, the substrates of ARAP1, expanded the size of CDRs, suggesting that the two Arf isoforms regulate ring structure downstream of ARAP1. Therefore our results reveal a novel molecular mechanism of CDR ring size control through the ARAP1–Arf1/5 pathway. PMID:22573888

  16. EFA6 controls Arf1 and Arf6 activation through a negative feedback loop.

    PubMed

    Padovani, Dominique; Folly-Klan, Marcia; Labarde, Audrey; Boulakirba, Sonia; Campanacci, Valérie; Franco, Michel; Zeghouf, Mahel; Cherfils, Jacqueline

    2014-08-26

    Guanine nucleotide exchange factors (GEFs) of the exchange factor for Arf6 (EFA6), brefeldin A-resistant Arf guanine nucleotide exchange factor (BRAG), and cytohesin subfamilies activate small GTPases of the Arf family in endocytic events. These ArfGEFs carry a pleckstrin homology (PH) domain in tandem with their catalytic Sec7 domain, which is autoinhibitory and supports a positive feedback loop in cytohesins but not in BRAGs, and has an as-yet unknown role in EFA6 regulation. In this study, we analyzed how EFA6A is regulated by its PH and C terminus (Ct) domains by reconstituting its GDP/GTP exchange activity on membranes. We found that EFA6 has a previously unappreciated high efficiency toward Arf1 on membranes and that, similar to BRAGs, its PH domain is not autoinhibitory and strongly potentiates nucleotide exchange on anionic liposomes. However, in striking contrast to both cytohesins and BRAGs, EFA6 is regulated by a negative feedback loop, which is mediated by an allosteric interaction of Arf6-GTP with the PH-Ct domain of EFA6 and monitors the activation of Arf1 and Arf6 differentially. These observations reveal that EFA6, BRAG, and cytohesins have unanticipated commonalities associated with divergent regulatory regimes. An important implication is that EFA6 and cytohesins may combine in a mixed negative-positive feedback loop. By allowing EFA6 to sustain a pool of dormant Arf6-GTP, such a circuit would fulfill the absolute requirement of cytohesins for activation by Arf-GTP before amplification of their GEF activity by their positive feedback loop.

  17. Immersive video

    NASA Astrophysics Data System (ADS)

    Moezzi, Saied; Katkere, Arun L.; Jain, Ramesh C.

    1996-03-01

    Interactive video and television viewers should have the power to control their viewing position. To make this a reality, we introduce the concept of Immersive Video, which employs computer vision and computer graphics technologies to provide remote users a sense of complete immersion when viewing an event. Immersive Video uses multiple videos of an event, captured from different perspectives, to generate a full 3D digital video of that event. That is accomplished by assimilating important information from each video stream into a comprehensive, dynamic, 3D model of the environment. Using this 3D digital video, interactive viewers can then move around the remote environment and observe the events taking place from any desired perspective. Our Immersive Video System currently provides interactive viewing and `walkthrus' of staged karate demonstrations, basketball games, dance performances, and typical campus scenes. In its full realization, Immersive Video will be a paradigm shift in visual communication which will revolutionize television and video media, and become an integral part of future telepresence and virtual reality systems.

  18. Comparison of ArF bilayer resists for sub-90 nm L/S fabrication

    NASA Astrophysics Data System (ADS)

    Hong, Jin; Kim, Hyun-Woo; Lee, Sung-Ho; Woo, Sang-Gyun; Cho, Han-Ku; Han, Woo-Sung

    2003-06-01

    The advent of 193nm ArF lithography opened new era of sub-90nm patterning in DRAM industry. ArF lithography in single layer scheme, however, has limitation in the substrate fabrication of sub-90nm L/S due to the decreased physical thickness of resist less that 3000Å and soft chemical structure of resist. Bilayer scheme, composed of Si-containing top PR and thick organic bottom layer, is gaining attention for its capability of patterning and control of resist thickness as a substitute for single layer. Several resists were evaluated for bilayer process in terms of photo patterning, dry development, bottom PR durability and SEM shrinkage. Resolution down to 80nm was achieved with Si content in the range of 8-9%. Etch selectivity in the dry development was a strong function of Si content and chemical structure of tope PR with pitch size dependence based on O2/N2 gas chemistry in dual frequency plasma tool. Profile control after dry development was subject to change depending on the gas ration (O2/N2) and power. Resist structure was proved to be a key factor in bottom PR durability at the substrate etch condition. Best combination of top and bottom resists in bilayer scheme will be discussed.

  19. Immersive CAD

    SciTech Connect

    Ames, A.L.

    1999-02-01

    This paper documents development of a capability for performing shape-changing editing operations on solid model representations in an immersive environment. The capability includes part- and assembly-level operations, with part modeling supporting topology-invariant and topology-changing modifications. A discussion of various design considerations in developing an immersive capability is included, along with discussion of a prototype implementation we have developed and explored. The project investigated approaches to providing both topology-invariant and topology-changing editing. A prototype environment was developed to test the approaches and determine the usefulness of immersive editing. The prototype showed exciting potential in redefining the CAD interface. It is fun to use. Editing is much faster and friendlier than traditional feature-based CAD software. The prototype algorithms did not reliably provide a sufficient frame rate for complex geometries, but has provided the necessary roadmap for development of a production capability.

  20. Arf1 and Arf6 Promote Ventral Actin Structures formed by acute Activation of Protein Kinase C and Src

    PubMed Central

    Caviston, Juliane P.; Cohen, Lee Ann; Donaldson, Julie G.

    2016-01-01

    Arf proteins regulate membrane traffic and organelle structure. Although Arf6 is known to initiate actin-based changes in cell surface architecture, Arf1 may also function at the plasma membrane. Here we show that acute activation of protein kinase C (PKC) induced by the phorbol ester PMA led to the formation of motile actin structures on the ventral surface of Beas-2b cells, a lung bronchial epithelial cell line. Ventral actin structures also formed in PMA-treated HeLa cells that had elevated levels of Arf activation. For both cell types, formation of the ventral actin structures was enhanced by expression of active forms of either Arf1 or Arf6, and by the expression of guanine nucleotide exchange factors that activate these Arfs. By contrast, formation of these structures was blocked by inhibitors of PKC and Src, and required phosphatidylinositol 4, 5-bisphosphate, Rac, Arf6 and Arf1. Furthermore, expression of ASAP1, an Arf1 GTPase activating protein (GAP) was more effective at inhibiting the ventral actin structures than was ACAP1, an Arf6 GAP. This study adds to the expanding role for Arf1 in the periphery and identifies a requirement for Arf1, a “Golgi Arf”, in the reorganization of the cortical actin cytoskeleton on ventral surfaces, against the substratum. PMID:24916416

  1. Controlled Scanning Probe Lithography

    NASA Astrophysics Data System (ADS)

    Ruskell, Todd G.; Sarid, Dror; Workman, Richard K.; Pyle, Jason L.

    1997-03-01

    A method for real-time monitoring of the quality and quantity of silicon oxide grown on silicon using conducting-tip scanning probe lithography has been developed. The sub-picoampere tip-sample currents measured during lithography in ambient conditions are shown to be proportional to the amount of silicon oxide being grown. In addition, we have demonstrated the ability to control the composition of the grown material by altering the lithographic environment. Silicon nitride growth is shown to result from lithography on silicon samples in an environment of annhydrous ammonia.

  2. Superhydrophobic immersion

    NASA Astrophysics Data System (ADS)

    Coux, Martin; Mathis, Adrien; Clanet, Christophe; Quere, David

    2016-11-01

    A superhydrophobic object is an object on which water doesn't spread. We can think conversely, such an object should be covered by air when immersed in water. The film of air that is formed in this case is visible at the naked eye owing to its brightness. Natural questions that arise from the observation of this phenomenon are how much air stays trapped between the liquid and the solid, ie what is the thickness of the film, and how this quantity can be modified. In this study, we describe an experimental setup that allows us to easily control the velocity of immersion of an object into a liquid bath and to access the volume of dragged air, from which we can deduce the thickness of the air film.

  3. Auxin-dependent compositional change in Mediator in ARF7- and ARF19-mediated transcription

    PubMed Central

    Ito, Jun; Fukaki, Hidehiro; Onoda, Makoto; Li, Lin; Li, Chuanyou; Tasaka, Masao; Furutani, Masahiko

    2016-01-01

    Mediator is a multiprotein complex that integrates the signals from transcription factors binding to the promoter and transmits them to achieve gene transcription. The subunits of Mediator complex reside in four modules: the head, middle, tail, and dissociable CDK8 kinase module (CKM). The head, middle, and tail modules form the core Mediator complex, and the association of CKM can modify the function of Mediator in transcription. Here, we show genetic and biochemical evidence that CKM-associated Mediator transmits auxin-dependent transcriptional repression in lateral root (LR) formation. The AUXIN/INDOLE 3-ACETIC ACID 14 (Aux/IAA14) transcriptional repressor inhibits the transcriptional activity of its binding partners AUXIN RESPONSE FACTOR 7 (ARF7) and ARF19 by making a complex with the CKM-associated Mediator. In addition, TOPLESS (TPL), a transcriptional corepressor, forms a bridge between IAA14 and the CKM component MED13 through the physical interaction. ChIP assays show that auxin induces the dissociation of MED13 but not the tail module component MED25 from the ARF7 binding region upstream of its target gene. These findings indicate that auxin-induced degradation of IAA14 changes the module composition of Mediator interacting with ARF7 and ARF19 in the upstream region of their target genes involved in LR formation. We suggest that this regulation leads to a quick switch of signal transmission from ARFs to target gene expression in response to auxin. PMID:27217573

  4. Auxin-dependent compositional change in Mediator in ARF7- and ARF19-mediated transcription.

    PubMed

    Ito, Jun; Fukaki, Hidehiro; Onoda, Makoto; Li, Lin; Li, Chuanyou; Tasaka, Masao; Furutani, Masahiko

    2016-06-07

    Mediator is a multiprotein complex that integrates the signals from transcription factors binding to the promoter and transmits them to achieve gene transcription. The subunits of Mediator complex reside in four modules: the head, middle, tail, and dissociable CDK8 kinase module (CKM). The head, middle, and tail modules form the core Mediator complex, and the association of CKM can modify the function of Mediator in transcription. Here, we show genetic and biochemical evidence that CKM-associated Mediator transmits auxin-dependent transcriptional repression in lateral root (LR) formation. The AUXIN/INDOLE 3-ACETIC ACID 14 (Aux/IAA14) transcriptional repressor inhibits the transcriptional activity of its binding partners AUXIN RESPONSE FACTOR 7 (ARF7) and ARF19 by making a complex with the CKM-associated Mediator. In addition, TOPLESS (TPL), a transcriptional corepressor, forms a bridge between IAA14 and the CKM component MED13 through the physical interaction. ChIP assays show that auxin induces the dissociation of MED13 but not the tail module component MED25 from the ARF7 binding region upstream of its target gene. These findings indicate that auxin-induced degradation of IAA14 changes the module composition of Mediator interacting with ARF7 and ARF19 in the upstream region of their target genes involved in LR formation. We suggest that this regulation leads to a quick switch of signal transmission from ARFs to target gene expression in response to auxin.

  5. Ion Implant Enabled 2x Lithography

    NASA Astrophysics Data System (ADS)

    Martin, Patrick M.; Godet, Ludovic; Cheung, Andrew; de Cock, Gael; Hatem, Chris

    2011-01-01

    Ion implantation has many applications in microelectronics beyond doping. The broad range of species available combined with the ability to precisely control dose, angle, and energy offers compelling advantages for use in precision material modification. The application to lithography has been reported elsewhere. Integrating ion implantation into the lithography process enables scaling the feature size requirements beyond the 15 nm node with a simplified double patterning sequence. In addition, ion implant may be used to remove line edge roughness, providing tremendous advantages to meet extreme lithography imaging requirements and provide additional device stability. We examine several species (e.g. Si, Ar, etc.) and the effect of energy and impact angle on several commercially available 193 nm immersion photoresists using a Varian VIISta® single wafer high current ion implanter. The treated photoresist will be evaluated for stability in an integrated double patterning application with ion implant used to freeze the primary image. We report on critical dimension impact, pattern integrity, optical property modification, and adhesion. We analyze the impact of line edge roughness improvement beyond the work of C. Struck including the power spectral distribution. TGA and FTIR Spectroscopy results for the implanted photoresist materials will also be included.

  6. Ion beam lithography system

    DOEpatents

    Leung, Ka-Ngo

    2005-08-02

    A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

  7. Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Erdmann, Andreas; Evanschitzky, Peter; Neumann, Jens Timo; Gräupner, Paul

    2016-04-01

    The mask plays a significant role as an active optical element in lithography, for both deep ultraviolet (DUV) and extreme ultraviolet (EUV) lithography. Mask-induced and feature-dependent shifts of the best-focus position and other aberration-like effects were reported both for DUV immersion and for EUV lithography. We employ rigorous computation of light diffraction from lithographic masks in combination with aerial image simulation to study the root causes of these effects and their dependencies from mask and optical system parameters. Special emphasis is put on the comparison of transmission masks for DUV lithography and reflective masks for EUV lithography, respectively. Several strategies to compensate the mask-induced phase effects are discussed.

  8. Structure and Membrane Interaction of Myristoylated ARF1

    PubMed Central

    Liu, Yizhou; Kahn, Richard A.; Prestegard, James H.

    2009-01-01

    Summary ADP-ribosylation factors (ARFs) are small (21 kDa), monomeric GTPases that are important regulators of membrane traffic. When membrane bound, they recruit soluble adaptors to membranes and trigger the assembly of coating complexes involved in cargo selection and vesicular budding. N-myristoylation is a conserved feature of all ARF proteins that is required for its biological functions, though the mechanism(s) by which the myristate acts in ARF functions is not fully understood. Here, we present the first structure of a myristoylated ARF1 protein, determined by solution NMR methods, and an assessment of the influence of myristoylation on association of ARF1·GDP and ARF1·GTP with lipid bilayers. A model in which myristoylation contributes to both the regulation of guanine nucleotide exchange and stable membrane association is supported. PMID:19141284

  9. Thirty years of lithography simulation

    NASA Astrophysics Data System (ADS)

    Mack, Chris A.

    2005-05-01

    Thirty years ago Rick Dill and his team at IBM published the first account of lithography simulation - the accurate description of semiconductor optical lithography by mathematical equations. Since then, lithography simulation has grown dramatically in importance in four important areas: as a research tool, as a development tool, as a manufacturing tool, and as a learning tool. In this paper, the history of lithography simulations is traced from its roots to today"s indispensable tools for lithographic technology development. Along the way, an attempt will be made to define the true value of lithography simulation to the semiconductor industry.

  10. Wedge immersed thermistor bolometers

    NASA Technical Reports Server (NTRS)

    Dreyfus, M. G. (Inventor)

    1964-01-01

    An immersed thermistor bolometer for the detection of ultraviolet, visible, and infrared radiation is described. Two types of immersed bolometers are discussed. The immersion of thermistor flakes in a lens, or half immersed by optical contact on a lens, is examined. Lens materials are evaluated for optimum immersion including fused aluminum oxide, beryllium oxide, and germanium. The application of the bolometer to instruments in which the entrance pupil of the immersion optics has a high aspect ratio is considered.

  11. The Arf GAP Asap promotes Arf1 function at the Golgi for cleavage furrow biosynthesis in Drosophila

    PubMed Central

    Rodrigues, Francisco F.; Shao, Wei; Harris, Tony J. C.

    2016-01-01

    Biosynthetic traffic from the Golgi drives plasma membrane growth. For Drosophila embryo cleavage, this growth is rapid but regulated for cycles of furrow ingression and regression. The highly conserved small G protein Arf1 organizes Golgi trafficking. Arf1 is activated by guanine nucleotide exchange factors, but essential roles for Arf1 GTPase-activating proteins (GAPs) are less clear. We report that the conserved Arf GAP Asap is required for cleavage furrow ingression in the early embryo. Because Asap can affect multiple subcellular processes, we used genetic approaches to dissect its primary effect. Our data argue against cytoskeletal or endocytic involvement and reveal a common role for Asap and Arf1 in Golgi organization. Although Asap lacked Golgi enrichment, it was necessary and sufficient for Arf1 accumulation at the Golgi, and a conserved Arf1-Asap binding site was required for Golgi organization and output. Of note, Asap relocalized to the nuclear region at metaphase, a shift that coincided with subtle Golgi reorganization preceding cleavage furrow regression. We conclude that Asap is essential for Arf1 to function at the Golgi for cleavage furrow biosynthesis. Asap may recycle Arf1 to the Golgi from post-Golgi membranes, providing optimal Golgi output for specific stages of the cell cycle. PMID:27535433

  12. The small GTPase Arf1 modulates mitochondrial morphology and function.

    PubMed

    Ackema, Karin B; Hench, Jürgen; Böckler, Stefan; Wang, Shyi Chyi; Sauder, Ursula; Mergentaler, Heidi; Westermann, Benedikt; Bard, Frédéric; Frank, Stephan; Spang, Anne

    2014-11-18

    The small GTPase Arf1 plays critical roles in membrane traffic by initiating the recruitment of coat proteins and by modulating the activity of lipid-modifying enzymes. Here, we report an unexpected but evolutionarily conserved role for Arf1 and the ArfGEF GBF1 at mitochondria. Loss of function of ARF-1 or GBF-1 impaired mitochondrial morphology and activity in Caenorhabditis elegans. Similarly, mitochondrial defects were observed in mammalian and yeast cells. In Saccharomyces cerevisiae, aberrant clusters of the mitofusin Fzo1 accumulated in arf1-11 mutants and were resolved by overexpression of Cdc48, an AAA-ATPase involved in ER and mitochondria-associated degradation processes. Yeast Arf1 co-fractionated with ER and mitochondrial membranes and interacted genetically with the contact site component Gem1. Furthermore, similar mitochondrial abnormalities resulted from knockdown of either GBF-1 or contact site components in worms, suggesting that the role of Arf1 in mitochondrial functioning is linked to ER-mitochondrial contacts. Thus, Arf1 is involved in mitochondrial homeostasis and dynamics, independent of its role in vesicular traffic.

  13. Decomposition of Plant Debris by the Nematophagous Fungus ARF

    PubMed Central

    Wang, Kening; Riggs, R. D.; Crippen, Devany

    2004-01-01

    In the study of the biological control of plant-parasitic nematodes, knowledge of the saprophytic ability of a nematophagous fungus is necessary to understand its establishment and survival in the soil. The objectives of this study were (i) to determine if the nematophagous fungus ARF (Arkansas Fungus) shows differential use of plant residues; and (ii) to determine if ARF still existed in the soil of a field in which ARF was found originally and in which the population level of Heterodera glycines had remained very low, despite 15 years of continuous, susceptible soybean. Laboratory studies of the decomposition of wheat straw or soybean root by ARF were conducted in two separate experiments, using a CO₂ collection apparatus, where CO₂-free air was passed through sterilized cotton to remove the microorganisms in the air and then was passed over the samples, and evolved CO₂ was trapped by KOH. Milligrams of C as CO₂ was used to calculate the percentage decomposition of the plant debris by ARF. Data indicated ARF decomposed 11.7% of total organic carbon of the wheat straw and 20.1% of the soybean roots in 6 weeks. In the field soil study, 21 soil samples were taken randomly from the field. Only 3 months after the infestation of the soil with H. glycines, the percentage of parasitized eggs of H. glycines reached 64 ± 19%, and ARF was isolated from most parasitized eggs of H. glycines. Research results indicated ARF could use plant residues to survive. PMID:19262814

  14. Native Language Immersion.

    ERIC Educational Resources Information Center

    Reyhner, Jon

    This paper describes the benefits of indigenous mother tongue immersion programs, examining the Total Physical Response approach to immersion for beginning learners and focusing on the development of Maori and Hawaiian mother tongue language immersion programs. The paper discusses the importance of immersing students in a language-risk…

  15. Microfluidic Applications of Soft Lithography

    SciTech Connect

    Rose, K A; Krulevitch, P; Hamilton, J

    2001-04-10

    The soft lithography fabrication technique was applied to three microfluidic devices. The method was used to create an original micropump design and retrofit to existing designs for a DNA manipulation device and a counter biological warfare sample preparation device. Each device presented unique and original challenges to the soft lithography application. AI1 design constraints of the retrofit devices were satisfied using PDMS devices created through variation of soft lithography methods. The micropump utilized the versatility of PDMS, creating design options not available with other materials. In all cases, the rapid processing of soft lithography reduced the fabrication time, creating faster turnaround for design modifications.

  16. ARF1(2-17) does not specifically interact with ARF1-dependent pathways. Inhibition by peptide of phospholipases C beta, D and exocytosis in HL60 cells.

    PubMed

    Fensome, A; Cunningham, E; Troung, O; Cockcroft, S

    1994-07-25

    The small GTP-binding protein ARF has been shown recently to regulate phospholipase D (PLD). In order to investigate the role of ARF proteins in regulated exocytosis, we have used the N-terminal peptide ARF1(2-17) of the ARF1 protein. ARF1 reconstituted PLD activity in cytosol-depleted HL60 cells was inhibited by ARF1(2-17). In the presence of endogenous cytosol, ARF1(2-17) also inhibited GTP-gamma-S-stimulated PLD activity and exocytosis. Mastoparan Politses jadwagae and mastoparan Vespula lewisii which exhibit similar structural properties to ARF1(2-17) also inhibited GTP-gamma-S-stimulated PLD and exocytosis. GTP-gamma-S-stimulated phospholipase C-beta (PLC-beta) was also inhibited by ARF(2-17) and mastoparan. In cytosol-depleted HL60 cells, the ARF(2-17) inhibited the reconstitution of GTP-gamma-S-stimulated PLC-beta activity with exogenously-added PLC-beta 1 and phosphatidylinositol transfer protein. We conclude that the widely-used ARF1(2-17) peptide inhibits both ARF-independent (i.e. PLC-beta) and ARF-dependent pathways (i.e. PLD) and therefore cannot be regarded as a specific inhibitor of ARF function.

  17. Fundamental study of optical threshold layer approach towards double exposure lithography

    NASA Astrophysics Data System (ADS)

    Gu, Xinyu; Berro, Adam J.; Cho, Younjin; Jen, Kane; Lee, Saul; Ngai, Tomoki; Ogata, Toshiyuki; Durand, William J.; Sundaresan, Arunkumar; Lancaster, Jeffrey R.; Jockusch, Steffen; Zimmerman, Paul; Turro, Nicholas J.; Willson, C. G.

    2009-03-01

    193 immersion lithography has reached its maximal achievable resolution. There are mainly two lithographic strategies that will enable continued increase in resolution. Those are being pursued in parallel. The first is extreme ultraviolet (EUV) lithography and the second is double patterning (exposure) lithography. EUV lithography is counted on to be available in 2013 time frame for 22 nm node. Unfortunately, this technology has suffered several delays due to fundamental problems with source power, mask infrastructure, metrology and overall reliability. The implementation of EUV lithography in the next five years is unlikely due to economic factors. Double patterning lithography (DPL) is a technology that has been implemented by the industry and has already shown the proof of concept for the 22nm node. This technique while expensive is the only current path forward for scaling with no fundamental showstoppers for the 32nm and 22nm nodes. Double exposure lithography (DEL) is being proposed as a cost mitigating approach to advanced lithography. Compared to DPL, DEL offers advantages in overlay and process time, thus reducing the cost-of-ownership (CoO). However, DEL requires new materials that have a non-linear photoresponse. So far, several approaches were proposed for double exposure lithography, from which Optical Threshold Layer (OTL) was found to give the best lithography performance according to the results of the simulation. This paper details the principle of the OTL approach. A photochromic polymer was designed and synthesized. The feasibility of the material for application of DEL was explored by a series of evaluations.

  18. Lithography, metrology and nanomanufacturing

    NASA Astrophysics Data System (ADS)

    Liddle, J. Alexander; Gallatin, Gregg M.

    2011-07-01

    Semiconductor chip manufacturing is by far the predominant nanomanufacturing technology in the world today. Top-down lithography techniques are used for fabrication of logic and memory chips since, in order to function, these chips must essentially be perfect. Assuring perfection requires expensive metrology. Top of the line logic sells for several hundred thousand dollars per square metre and, even though the required metrology is expensive, it is a small percentage of the overall manufacturing cost. The level of stability and control afforded by current lithography tools means that much of this metrology can be online and statistical. In contrast, many of the novel types of nanomanufacturing currently being developed will produce products worth only a few dollars per square metre. To be cost effective, the required metrology must cost proportionately less. Fortunately many of these nanofabrication techniques, such as block copolymer self-assembly, colloidal self-assembly, DNA origami, roll-2-roll nano-imprint, etc., will not require the same level of perfection to meet specification. Given the variability of these self-assembly processes, in order to maintain process control, these techniques will require some level of real time online metrology. Hence we are led to the conclusion that future nanomanufacturing may well necessitate ``cheap'' nanometre scale metrology which functions real time and on-line, e.g. at GHz rates, in the production stream. In this paper we review top-down and bottom-up nanofabrication techniques and compare and contrast the various metrology requirements.

  19. Lithography, metrology and nanomanufacturing.

    PubMed

    Liddle, J Alexander; Gallatin, Gregg M

    2011-07-01

    Semiconductor chip manufacturing is by far the predominant nanomanufacturing technology in the world today. Top-down lithography techniques are used for fabrication of logic and memory chips since, in order to function, these chips must essentially be perfect. Assuring perfection requires expensive metrology. Top of the line logic sells for several hundred thousand dollars per square metre and, even though the required metrology is expensive, it is a small percentage of the overall manufacturing cost. The level of stability and control afforded by current lithography tools means that much of this metrology can be online and statistical. In contrast, many of the novel types of nanomanufacturing currently being developed will produce products worth only a few dollars per square metre. To be cost effective, the required metrology must cost proportionately less. Fortunately many of these nanofabrication techniques, such as block copolymer self-assembly, colloidal self-assembly, DNA origami, roll-2-roll nano-imprint, etc., will not require the same level of perfection to meet specification. Given the variability of these self-assembly processes, in order to maintain process control, these techniques will require some level of real time online metrology. Hence we are led to the conclusion that future nanomanufacturing may well necessitate "cheap" nanometre scale metrology which functions real time and on-line, e.g. at GHz rates, in the production stream. In this paper we review top-down and bottom-up nanofabrication techniques and compare and contrast the various metrology requirements.

  20. Bubble-Pen Lithography.

    PubMed

    Lin, Linhan; Peng, Xiaolei; Mao, Zhangming; Li, Wei; Yogeesh, Maruthi N; Rajeeva, Bharath Bangalore; Perillo, Evan P; Dunn, Andrew K; Akinwande, Deji; Zheng, Yuebing

    2016-01-13

    Current lithography techniques, which employ photon, electron, or ion beams to induce chemical or physical reactions for micro/nano-fabrication, have remained challenging in patterning chemically synthesized colloidal particles, which are emerging as building blocks for functional devices. Herein, we develop a new technique - bubble-pen lithography (BPL) - to pattern colloidal particles on substrates using optically controlled microbubbles. Briefly, a single laser beam generates a microbubble at the interface of colloidal suspension and a plasmonic substrate via plasmon-enhanced photothermal effects. The microbubble captures and immobilizes the colloidal particles on the substrate through coordinated actions of Marangoni convection, surface tension, gas pressure, and substrate adhesion. Through directing the laser beam to move the microbubble, we create arbitrary single-particle patterns and particle assemblies with different resolutions and architectures. Furthermore, we have applied BPL to pattern CdSe/ZnS quantum dots on plasmonic substrates and polystyrene (PS) microparticles on two-dimensional (2D) atomic-layer materials. With the low-power operation, arbitrary patterning and applicability to general colloidal particles, BPL will find a wide range of applications in microelectronics, nanophotonics, and nanomedicine.

  1. Materials for and performance of multilayer lithography schemes

    NASA Astrophysics Data System (ADS)

    Weimer, Marc; Wang, Yubao; Neef, Charles J.; Claypool, James; Edwards, Kevin; Zu, Zhimin

    2007-03-01

    The 45-nm node will require the use of thinner photoresists, which necessitates the use of multilayer pattern transfer schemes. One common multilayer approach is the use of a silicon-rich anti-reflective hardmask (Si BARC) with a carbon-rich pattern transfer underlayer (spin-on carbon, or SOC). The combination of the two layers provides a highly planar platform for a thin resist, and provides a route to etch substrates due to the alternating plasma etch selectivities of the organic resist, inorganic Si BARC, and organic SOC. Yet such schemes will need to be optimized both for pattern transfer and optics. Optimizing optics under hyper-NA immersion conditions is more complicated than with standard (that is, NA<1) lithography. A rigorous calculation technique is used to evaluate and compare standard lithography to a hyper-NA case using a multilayer stack. An example of such a stack is shown to have reasonable lithographic performance.

  2. Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique

    NASA Astrophysics Data System (ADS)

    Biswas, Abani M.; Li, Jianliang; Hiserote, Jay A.; Melvin, Lawrence S., III

    2006-10-01

    Immersion lithography and multiple exposure techniques are the most promising methods to extend lithography manufacturing to the 45nm node. Although immersion lithography has attracted much attention recently as a promising optical lithography extension, it will not solve all the problems at the 45-nm node. The 'dry' option, (i.e. double exposure/etch) which can be realized with standard processing practice, will extend 193-nm lithography to the end of the current industry roadmap. Double exposure/etch lithography is expensive in terms of cost, throughput time, and overlay registration accuracy. However, it is less challenging compared to other possible alternatives and has the ability to break through the κ I barrier (0.25). This process, in combination with attenuated PSM (att-PSM) mask, is a good imaging solution that can reach, and most likely go beyond, the 45-nm node. Mask making requirements in a double exposure scheme will be reduced significantly. This can be appreciated by the fact that the separation of tightly-pitched mask into two less demanding pitch patterns will reduce the stringent specifications for each mask. In this study, modeling of double exposure lithography (DEL) with att-PSM masks to target 45-nm node is described. In addition, mask separation and implementation issues of optical proximity corrections (OPC) to improve process window are studied. To understand the impact of OPC on the process window, Fourier analysis of the masks has been carried out as well.

  3. ArfGAPs: key regulators for receptor sorting

    PubMed Central

    Shiba, Yoko; Randazzo, Paul A.

    2015-01-01

    Mammalian cells have many membranous organelles that require proper composition of proteins and lipids. Cargo sorting is a process required for transporting specific proteins and lipids to appropriate organelles, and if this process is disrupted, organelle function as well as cell function is disrupted. ArfGAP family proteins have been found to be critical for receptor sorting. In this review, we summarize our recent knowledge about the mechanism of cargo sorting that require function of ArfGAPs in promoting the formation of transport vesicles, and discuss the involvement of specific ArfGAPs for the sorting of a variety of receptors, such as MPR, EGFR, TfR, Glut4, TRAIL-R1/DR4, M5-muscarinic receptor, c-KIT, rhodopsin and β1-integrin. Given the importance of many of these receptors to human disease, the studies of ArfGAPs may provide novel therapeutic strategies in addition to providing mechanistic insight of receptor sorting. PMID:26046097

  4. Role of Arf GTPases in fungal morphogenesis and virulence

    PubMed Central

    Labbaoui, Hayet; Bogliolo, Stéphanie; Ghugtyal, Vikram; Solis, Norma V.

    2017-01-01

    Virulence of the human fungal pathogen Candida albicans depends on the switch from budding to filamentous growth, which requires sustained membrane traffic and polarized growth. In many organisms, small GTPases of the Arf (ADP-ribosylation factor) family regulate membrane/protein trafficking, yet little is known about their role in fungal filamentous growth. To investigate these GTPases in C. albicans, we generated loss of function mutants in all 3 Arf proteins, Arf1-Arf3, and 2 Arf-like proteins, Arl1 and Arl3. Our results indicate that of these proteins, Arf2 is required for viability and sensitivity to antifungal drugs. Repressible ARF2 expression results in defects in filamentous growth, cell wall integrity and virulence, likely due to alteration of the Golgi. Arl1 is also required for invasive filamentous growth and, although arl1/arl1 cells can initiate hyphal growth, hyphae are substantially shorter than that of the wild-type, due to the inability of this mutant to maintain hyphal growth at a single site. We show that this defect does not result from an alteration of phospholipid distribution and is unlikely to result from the sole Golgin Imh1 mislocalization, as Imh1 is not required for invasive filamentous growth. Rather, our results suggest that the arl1/arl1 hyphal growth defect results from increased secretion in this mutant. Strikingly, the arl1/arl1 mutant is drastically reduced in virulence during oropharyngeal candidiasis. Together, our results highlight the importance of Arl1 and Arf2 as key regulators of hyphal growth and virulence in C. albicans and identify a unique function of Arl1 in secretion. PMID:28192532

  5. Programmable imprint lithography template

    DOEpatents

    Cardinale, Gregory F.; Talin, Albert A.

    2006-10-31

    A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

  6. Role of the tumor suppressor ARF in macrophage polarization

    PubMed Central

    Herranz, Sandra; Través, Paqui G.; Luque, Alfonso; Hortelano, Sonsoles

    2012-01-01

    The ARF locus is frequently inactivated in human cancer. The oncosuppressor ARF has indeed been described as a general sensor for different situation of cellular stress. We have previously demonstrated that ARF deficiency severely impairs inflammatory responses in vitro and in vivo, establishing a role for ARF in the regulation of innate immunity. The aim of the present work was to get further insights into the immune functions of ARF and to evaluate its possible contribution to the polarization of macrophages toward the M1 or M2 phenotype. Our results demonstrate that resting Arf−/− macrophages express high levels of Ym1 and Fizz-1, two typical markers of alternatively-activated macrophages (M2). Additionally, Arf−/− peritoneal macrophages showed an impaired response to lipopolysaccharide (a classical inducer of M1 polaryzation) and a reduced production of pro-inflammatory cytokines/chemokines. Moreover, upon stimulation with interleukin-4 (IL-4), an inducer of the M2 phenotype, well established M2 markers such as Fizz-1, Ym1 and arginase-1 were upregulated in Arf−/− as compared with wild type macrophages. Accordingly, the cytokine and chemokine profile associated with the M2 phenotype was significantly overexpressed in Arf−/− macrophages responding to IL-4. In addition, multiple pro-angiogenic factors such as VEGF and MMP-9 were also increased. In summary, these results indicate that ARF contributes to the polarization and functional plasticity of macrophages. PMID:23243586

  7. A fluorescence resonance energy transfer activation sensor for Arf6.

    PubMed

    Hall, Brian; McLean, Mark A; Davis, Kathryn; Casanova, James E; Sligar, Steven G; Schwartz, Martin A

    2008-03-15

    The involvement of the small GTPase Arf6 in Rac activation, cell migration, and cancer invasiveness suggests that it is activated in a spatially and temporally regulated manner. Small GTPase activation has been imaged in cells using probes in which the GTPase and a fragment of a downstream effector protein are fused to fluorescent reporter proteins that constitute a fluorescence resonance energy transfer (FRET) donor/acceptor pair. Unlike other Ras family GTPases, the N terminus of Arf6 is critical for membrane targeting and, thus, cannot be modified by fusion to a fluorescent protein. We found that the previously described C-terminal green fluorescent protein (GFP) derivative also shows diminished membrane targeting. Therefore, we inserted a fluorescent protein into an inert loop within the Arf6 sequence. This fusion showed normal membrane targeting, nucleotide-dependent interaction with the downstream effector GGA3, and normal regulation by a GTPase-activating protein (GAP) and a guanine nucleotide exchange factor (GEF). Using the recently developed CyPET/YPET fluorescent proteins as a FRET pair, we found that Arf6-CyPET underwent efficient energy transfer when bound to YPET-GGA3 effector domain in intact cells. The addition of platelet-derived growth factor (PDGF) to fibroblasts triggered a rapid and transient increase in FRET, indicative of Arf6 activation. These reagents should be useful for investigations of Arf6 activation and function.

  8. Off-axis illumination of lithography tool

    NASA Astrophysics Data System (ADS)

    Xing, Han; Lin, Li; Bin, Ma

    2013-12-01

    Lithography tool is a necessary part for LSI and VLSI. The illumination system design is an important part in the lithography optical system design. Off-axis illumination technology is an effective way to reducing resolution of lithography. The paper introduction the basic components of lithography tool, the principle of off-axis illumination reducing the resolution of lithography and focus on the two implementations of OAI technology, finally point out advantages and disadvantage of the two implementations.

  9. Role of the Arf6 GDP/GTP cycle and Arf6 GTPase-activating proteins in actin remodeling and intracellular transport.

    PubMed

    Klein, Stéphanie; Franco, Michel; Chardin, Pierre; Luton, Frédéric

    2006-05-05

    We have analyzed both biochemically and functionally a series of Arf6 mutants, providing new insights into the molecular mode of action of the small G protein Arf6. First, by comparing a fast-cycling mutant (Arf6(T157N)) and a GTPase-deficient mutant (Arf6(Q67L)), we established the necessity for completion of the Arf6 GDP/GTP cycle for recycling of major histocompatibility complex molecules to the plasma membrane. Second, we found that aluminum fluoride (AlF), known for inducing membrane protrusion in cells expressing exogenous wild-type Arf6, stabilized a functional wild-type Arf6.AlF(x) . GTPase-activating protein (GAP) complex in vitro and in vivo. We also found that the tandem mutation Q37E/S38I prevented the binding of two Arf GAPs, but not the effector ARHGAP10, and blocked the formation of membrane protrusion and actin reorganization. Together, our results with AlF(x) and Arf6(Q37E/S38I) demonstrate the critical role of the Arf6 GAPs as effectors for Arf6-regulated actin cytoskeleton remodeling. Finally, competition experiments conducted in vivo suggest the existence of a membrane receptor for GDP-bound Arf6.

  10. Recruitment of Arf1-GDP to Golgi by Glo3p-type ArfGAPs is crucial for golgi maintenance and plant growth.

    PubMed

    Min, Myung Ki; Jang, Mihue; Lee, Myounghui; Lee, Junho; Song, Kyungyoung; Lee, Yongjik; Choi, Kwan Yong; Robinson, David G; Hwang, Inhwan

    2013-02-01

    ADP-ribosylation factor1 (Arf1), a member of the small GTP-binding proteins, plays a pivotal role in protein trafficking to multiple organelles. In its GDP-bound form, Arf1 is recruited from the cytosol to organelle membranes, where it functions in vesicle-mediated protein trafficking. However, the mechanism of Arf1-GDP recruitment remains unknown. Here, we provide evidence that two Glo3p-type Arf GTPase-activating proteins (ArfGAPs), ArfGAP domain8 (AGD8) and AGD9, are involved in the recruitment of Arf1-GDP to the Golgi apparatus in Arabidopsis (Arabidopsis thaliana). RNA interference plants expressing low levels of AGD8 and AGD9 exhibited abnormal Golgi morphology, inhibition of protein trafficking, and arrest of plant growth and development. In RNA interference plants, Arf1 was poorly recruited to the Golgi apparatus. Conversely, high levels of AGD8 and AGD9 induced Arf1 accumulation at the Golgi and suppressed Golgi disruption and inhibition of vacuolar trafficking that was caused by overexpression of AGD7. Based on these results, we propose that the Glo3p-type ArfGAPs AGD8 and AGD9 recruit Arf1-GDP from the cytosol to the Golgi for Arf1-mediated protein trafficking, which is essential for plant development and growth.

  11. Vous avez dit "immersion?" (You Said "Immersion?").

    ERIC Educational Resources Information Center

    Gajo, Laurent, Ed.

    1998-01-01

    Articles on immersion and bilingual education include these: "Terminological Considerations Regarding Content and Language Integrated Learning" (Tarja Nikula, David Marsh); "Educazione bilingue e multiculturale, istruzione bilingue, immersione totale: quattro nozioni da definire" ("Bilingual and Multicultural Education,…

  12. Nanoimprint lithography for nanodevice fabrication

    NASA Astrophysics Data System (ADS)

    Barcelo, Steven; Li, Zhiyong

    2016-09-01

    Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL process enables grayscale lithography with only a single patterning step, not achievable with any other conventional lithography techniques. These strengths enable the fabrication of unique nanoscale devices by NIL for a variety of applications including optics, plasmonics and even biotechnology. Recent advances in throughput and yield in NIL processes demonstrate the potential of being adopted for mainstream semiconductor device fabrication as well.

  13. Nanoimprint lithography for nanodevice fabrication.

    PubMed

    Barcelo, Steven; Li, Zhiyong

    2016-01-01

    Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL process enables grayscale lithography with only a single patterning step, not achievable with any other conventional lithography techniques. These strengths enable the fabrication of unique nanoscale devices by NIL for a variety of applications including optics, plasmonics and even biotechnology. Recent advances in throughput and yield in NIL processes demonstrate the potential of being adopted for mainstream semiconductor device fabrication as well.

  14. Identification, isolation and expression analysis of auxin response factor (ARF) genes in Solanum lycopersicum.

    PubMed

    Wu, Jian; Wang, Feiyan; Cheng, Lin; Kong, Fuling; Peng, Zhen; Liu, Songyu; Yu, Xiaolin; Lu, Gang

    2011-11-01

    Auxin response factors (ARFs) encode transcriptional factors that bind specifically to the TGTCTC-containing auxin response elements found in the promoters of primary/early auxin response genes that regulate plant development. In this study, investigation of the tomato genome revealed 21 putative functional ARF genes (SlARFs), a number comparable to that found in Arabidopsis (23) and rice (25). The full cDNA sequences of 15 novel SlARFs were isolated and delineated by sequencing of PCR products. A comprehensive genome-wide analysis of this gene family is presented, including the gene structures, chromosome locations, phylogeny, and conserved motifs. In addition, a comparative analysis between ARF family genes in tomato and maize was performed. A phylogenetic tree generated from alignments of the full-length protein sequences of 21 OsARFs, 23 AtARFs, 31 ZmARFs, and 21 SlARFs revealed that these ARFs were clustered into four major groups. However, we could not find homologous genes in rice, maize, or tomato with AtARF12-15 and AtARF20-23. The expression patterns of tomato ARF genes were analyzed by quantitative real-time PCR. Our comparative analysis will help to define possible functions for many of these newly isolated ARF-family genes in plant development.

  15. Extreme ultraviolet lithography machine

    DOEpatents

    Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  16. Decal transfer lithography

    NASA Astrophysics Data System (ADS)

    Childs, William Robert

    A new soft-lithographic method for micropatterning polymeric resists, Decal Transfer Lithography (DTL), is described. This technique is based on the adhesive transfer of elastomeric decal patterns via the engineered adhesion and release properties of a compliant poly(dimethylsiloxane) (PDMS) patterning tool. This procedure is capable of transferring micron to sub-micron-sized features with high fidelity over large substrate areas in both open and closed forms, negative and positive image contrasts. Methods are introduced to promote adhesion of PDMS to noble metals using either of two methods: self-assembling monolayers (SAMs) or silicon dioxide capping layers. A novel UV/Ozone (UVO) mask was developed, which allows the photopatterning of UVO modifications of polymer surfaces. This modification in turn enables the direct photoinitiated patterning of resist patterns transferred by the soft-lithographic DTL method Photodefined-Cohesive Mechanical Failure (P-CMF), which fuses the design rules of the contact based adhesive transfer of PDMS in DTL with those of photolithography. The second, so-called Spartacus method, transfers the design rules of photolithography directly onto PDMS surfaces, enabling a photodefined adhesive transfer of PDMS films onto silicon oxide surfaces. The most significant advance embodied in the DTL method, however, is that is offers useful new capabilities for the design and fabrication of patterns of non-planar surfaces, 3D microfluidic assemblies, and microreactors.

  17. Lithography overlay controller formulation

    NASA Astrophysics Data System (ADS)

    Bode, Christopher A.; Toprac, Anthony J.; Edwards, Richard D.; Edgar, Thomas F.

    2000-08-01

    Lithography overlay refers to the measurement of the alignment of successive patterns within the manufacture of semiconductor devices. Control of overlay has become of great importance in semiconductor manufacturing, as the tolerance for overlay error is continually shrinking in order to manufacture next-generation semiconductor products. Run-to-run control has become an attractive solution to many control problems within the industry, including overlay. The term run-to-run control refers to any automated procedure whereby recipe settings are updated between successive process runs in order to keep the process under control. The following discussion will present the formulation of such a controller by examining control of overlay. A brief introduction of overlay will be given, highlighting the control challenge overlay presents. A data management methodology that groups like processes together in order to improve controllability, referred to as control threads, will then be presented. Finally, a discussion of linear model predictive control will show its utility in feedback run-to-run control.

  18. Cryogenic immersion microscope

    SciTech Connect

    Le Gros, Mark; Larabell, Carolyn A.

    2010-12-14

    A cryogenic immersion microscope whose objective lens is at least partially in contact with a liquid reservoir of a cryogenic liquid, in which reservoir a sample of interest is immersed is disclosed. When the cryogenic liquid has an index of refraction that reduces refraction at interfaces between the lens and the sample, overall resolution and image quality are improved. A combination of an immersion microscope and x-ray microscope, suitable for imaging at cryogenic temperatures is also disclosed.

  19. Differential membrane association properties and regulation of class I and class II Arfs.

    PubMed

    Duijsings, Daniël; Lanke, Kjerstin H W; van Dooren, Sander H J; van Dommelen, Michiel M T; Wetzels, Roy; de Mattia, Fabrizio; Wessels, Els; van Kuppeveld, Frank J M

    2009-03-01

    ADP-ribosylation factor (Arf) proteins are small guanosine triphosphatases (GTPases) that act as major regulators of intracellular vesicular trafficking and secretory organelle pathway integrity. Like all small monomeric GTPases, Arf proteins cycle between a GDP-bound and a GTP-bound state, and this cycling is catalysed by guanine nucleotide exchange factors (GEFs) and GTPase-activating proteins. While the class I Arfs, especially Arf1, have been studied extensively, little is known as yet about the function and regulation of class II Arfs, Arf4 and Arf5. In this study, we show that Arf proteins show class-specific dynamic behaviour. Moreover, unlike class I Arfs, membrane association of class II Arfs is resistant to inhibition of large Arf GEFs by Brefeldin A. Through the construction of Arf chimeric proteins, evidence is provided that the N-terminal amphipathic helix and a class-specific residue in the conserved interswitch domain determine the membrane-binding properties of class I and class II Arf proteins. Our results show that fundamental differences exist in behaviour and regulation of these small GTPases.

  20. Photoinhibition superresolution lithography

    NASA Astrophysics Data System (ADS)

    Forman, Darren Lawrence

    While the prospect of nanoscale manufacturing has generated tremendous excitement, arbitrary patterning at nanometer length scales cannot be brought about with current photolithography---the technology that for decades has driven electronics miniaturization and enabled mass production of digital logic, memory, MEMS and flat-panel displays. This is due to the relatively long wavelength of light and diffraction, which imposes a physical not technological limit on the resolution of a far-field optical pattern. Photoinhibited superresolution (PInSR) lithography is a new scheme designed to beat the diffraction limit through two-color confinement of photopolymerization and, via efficient single-photon absorption kinetics, also be high-throughput capable. This thesis describes development of an integrated optical and materials system for investigating spatiotemporal dynamics of photoinhibited superresolution lithography, with a demonstrated 3x superresolution beyond the diffraction limit. The two-color response, arising from orthogonal photogeneration of species that participate in competing reactions, is shown to be highly complex. This is both a direct and indirect consequence of mobility. Interesting trade-offs arise: thin-film resins (necessitated by single-photon absorption kinetics) require high viscosity for film stability, but the photoinhibition effect is suppressed in viscous resins. Despite this apparent suppression, which can be overcome with high excitation of the photoinhibition system, the low mobility afforded by viscous materials is beneficial for confinement of active species. Diffusion-induced blurring of patterned photoinhibition is problematic in a resin with viscosity = 1,000 cP, and overcome in a resin with viscosity eta = 500,000 cP. Superresolution of factor 3x beyond the diffraction limit is demonstrated at 0.2 NA, with additional results indicating superresolution ability at 1.2 NA. Investigating the effect of diminished photoinhibition efficacy

  1. Localization and characterization of the human ADP-ribosylation factor 5 (ARF5) gene

    SciTech Connect

    McGuire, R.E. |; Daiger, S.P.; Green, E.D.

    1997-05-01

    ADP-ribosylation factor 5 (ARF5) is a member of the ARF gene family. The ARF proteins stimulate the in vitro ADP-ribosyltransferase activity of cholera toxin and appear to play a role in vesicular trafficking in vivo. We have mapped ARF5, one of the six known mammalian ARF genes, to a well-defined yeast artificial chromosome contig on human chromosome 7q31.3. In addition, we have isolated and sequenced an {approximately}3.2-kb genomic segment that contains the entire ARF5 coding region, revealing the complete intron-exon structure of the gene. With six coding exons and five introns, the genomic structure of ARF5 is unique among the mammalian ARF genes and provides insight about the evolutionary history of this ancient gene family. 20 refs., 2 figs., 1 tab.

  2. Physical Limitations in Lithography for Microelectronics.

    ERIC Educational Resources Information Center

    Flavin, P. G.

    1981-01-01

    Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

  3. Human ARF4 expression rescues sec7 mutant yeast cells.

    PubMed Central

    Deitz, S B; Wu, C; Silve, S; Howell, K E; Melançon, P; Kahn, R A; Franzusoff, A

    1996-01-01

    Vesicle-mediated traffic between compartments of the yeast secretory pathway involves recruitment of multiple cytosolic proteins for budding, targeting, and membrane fusion events. The SEC7 gene product (Sec7p) is a constituent of coat structures on transport vesicles en route to the Golgi complex in the yeast Saccharomyces cerevisiae. To identify mammalian homologs of Sec7p and its interacting proteins, we used a genetic selection strategy in which a human HepG2 cDNA library was transformed into conditional-lethal yeast sec7 mutants. We isolated several clones capable of rescuing sec7 mutant growth at the restrictive temperature. The cDNA encoding the most effective suppressor was identified as human ADP ribosylation factor 4 (hARF4), a member of the GTPase family proposed to regulate recruitment of vesicle coat proteins in mammalian cells. Having identified a Sec7p-interacting protein rather than the mammalian Sec7p homolog, we provide evidence that hARF4 suppressed the sec7 mutation by restoring secretory pathway function. Shifting sec7 strains to the restrictive temperature results in the disappearance of the mutant Sec7p cytosolic pool without apparent changes in the membrane-associated fraction. The introduction of hARF4 to the cells maintained the balance between cytosolic and membrane-associated Sec7p pools. These results suggest a requirement for Sec7p cycling on and off of the membranes for cell growth and vesicular traffic. In addition, overexpression of the yeast GTPase-encoding genes ARF1 and ARF2, but not that of YPT1, suppressed the sec7 mutant growth phenotype in an allele-specific manner. This allele specificity indicates that individual ARFs are recruited to perform two different Sec7p-related functions in vesicle coat dynamics. PMID:8668142

  4. The Opposing Roles of Nucleophosmin and the ARF Tumor Suppressor in Breast Cancer

    DTIC Science & Technology

    2005-04-01

    demonstrated the physiological significance of the p53-independent ARF path- way through examination of relevant mouse model systems . Mice lacking ARF...In a corroborative study, wild-type and p53-null mice displayed normal development of the hyaloid vascular system in the eye, yet ARF-null and ARF/p53... system (Packard Biosciences, Meriden, Conn.). The extracted peptides were dried under vacuum, purified with Zip Plates (Millipore), resuspended in

  5. ARF1 and ARF6 regulate recycling of GRASP/Tamalin and the Rac1-GEF Dock180 during HGF-induced Rac1 activation.

    PubMed

    Koubek, Emily J; Santy, Lorraine C

    2016-08-12

    Hepatocyte growth factor (HGF) is a potent signaling factor that acts on epithelial cells, causing them to dissociate and scatter. This migration is coordinated by a number of small GTPases, such as ARF6 and Rac1. Active ARF6 is required for HGF-stimulated migration and intracellular levels of ARF6-GTP and Rac1-GTP increase following HGF treatment. During migration, cross talk between ARF6 and Rac1 occurs through formation of a multi-protein complex containing the ARF-GEF cytohesin-2, the scaffolding protein GRASP/Tamalin, and the Rac1-GEF Dock180. Previously, the role of ARF6 in this process was unclear. We have now found that ARF6 and ARF1 regulate trafficking of GRASP and Dock180 to the plasma membrane following HGF treatment. Trafficking of GRASP and Dock180 is impaired by blocking ARF6-mediated recycling pathways and is required for HGF-stimulated Rac1 activation. Finally, HGF treatment stimulates association of GRASP and Dock180. Inhibition of ARF6 trafficking pathways traps GRASP and Dock180 as a complex in the cell.

  6. Immersion Meta-Lenses at Visible Wavelengths for Nanoscale Imaging.

    PubMed

    Chen, Wei Ting; Zhu, Alexander Y; Khorasaninejad, Mohammadreza; Shi, Zhujun; Sanjeev, Vyshakh; Capasso, Federico

    2017-04-13

    Immersion objectives can focus light into a spot smaller than what is achievable in free space, thereby enhancing the spatial resolution for various applications such as microscopy, spectroscopy, and lithography. Despite the availability of advanced lens polishing techniques, hand-polishing is still required to manufacture the front lens of a high-end immersion objective, which poses major constraints for lens design. This limits the shape of the front lens to spherical. Therefore, several other lenses need to be cascaded to correct for spherical aberration, resulting in significant challenges for miniaturization and adding design complexity for different immersion liquids. Here, by using metasurfaces, we demonstrate liquid immersion meta-lenses free of spherical aberration at various design wavelengths in the visible spectrum. We report water and oil immersion meta-lenses of various numerical apertures (NA) up to 1.1 and show that their measured focal spot sizes are diffraction-limited with Strehl ratios of approximately 0.9 at 532 nm. By integrating the oil immersion meta-lens (NA = 1.1) into a commercial scanning confocal microscope, we achieve an imaging spatial resolution of approximately 200 nm. These meta-lenses can be easily adapted to focus light through multilayers of different refractive indices and mass-produced using modern industrial manufacturing or nanoimprint techniques, leading to cost-effective high-end optics.

  7. Demonstration of EDA flow for massively parallel e-beam lithography

    NASA Astrophysics Data System (ADS)

    Brandt, P.; Belledent, J.; Tranquillin, C.; Figueiro, T.; Meunier, S.; Bayle, S.; Fay, A.; Milléquant, M.; Icard, B.; Wieland, M.

    2014-03-01

    Today's soaring complexity in pushing the limits of 193nm immersion lithography drives the development of other technologies. One of these alternatives is mask-less massively parallel electron beam lithography, (MP-EBL), a promising candidate in which future resolution needs can be fulfilled at competitive cost. MAPPER Lithography's MATRIX MP-EBL platform has currently entered an advanced stage of development. The first tool in this platform, the FLX 1200, will operate using more than 1,300 beams, each one writing a stripe 2.2μm wide. 0.2μm overlap from stripe to stripe is allocated for stitching. Each beam is composed of 49 individual sub-beams that can be blanked independently in order to write in a raster scan pixels onto the wafer.

  8. Porphyrin-Based Photocatalytic Lithography

    SciTech Connect

    Bearinger, J; Stone, G; Christian, A; Dugan, L; Hiddessen, A; Wu, K J; Wu, L; Hamilton, J; Stockton, C; Hubbell, J

    2007-10-15

    Photocatalytic lithography is an emerging technique that couples light with coated mask materials in order to pattern surface chemistry. We excite porphyrins to create radical species that photocatalytically oxidize, and thereby pattern, chemistries in the local vicinity. The technique advantageously does not necessitate mass transport or specified substrates, it is fast and robust and the wavelength of light does not limit the resolution of patterned features. We have patterned proteins and cells in order to demonstrate the utility of photocatalytic lithography in life science applications.

  9. Polymer nanofibers by soft lithography

    NASA Astrophysics Data System (ADS)

    Pisignano, Dario; Maruccio, Giuseppe; Mele, Elisa; Persano, Luana; Di Benedetto, Francesca; Cingolani, Roberto

    2005-09-01

    The fabrication of polymeric fibers by soft lithography is demonstrated. Polyurethane, patterned by capillarity-induced molding with high-resolution elastomeric templates, forms mm-long fibers with a diameter below 0.3μm. The Young's modulus of the fabricated structures, evaluated by force-distance scanning probe spectroscopy, has a value of 0.8MPa. This is an excellent example of nanostructures feasible by the combination of soft nanopatterning and high-resolution fabrication approaches for master templates, and particularly electron-beam lithography.

  10. Hydrolysis of bound GTP by ARF protein triggers uncoating of Golgi- derived COP-coated vesicles

    PubMed Central

    1993-01-01

    The cycle of nucleotide exchange and hydrolysis by a small GTP-binding protein, ADP-ribosylation factor (ARF), helps to provide vectoriality to vesicle transport. Coat assembly is triggered when ARF binds GTP, initiating transport vesicle budding, and coat disassembly is triggered when ARF hydrolyzes GTP, allowing the uncoated vesicle to fuse. PMID:8253837

  11. Microfabrication using soft lithography

    NASA Astrophysics Data System (ADS)

    Zhao, Xiao-Mei

    Soft Lithography is a group of non-photolithographic techniques currently being explored in our group. Four such techniques-microcontact printing (μCP), replica molding (REM), micromolding in capillaries (MIMIC), and microtransfer molding (μTM)-have been demonstrated for fabricating micro- and nanostructures of a variety of materials with dimension >=30 nm. Part I (Chapters 1-5) reviews several aspects of the three molding techniques REM, MIMIC, and μTM. Chapters 1-3 describe μTM and MIMIC, and the use of these techniques in the fabrication of functional devices. μTM is capable of generating μm-scale structures over large areas, on both planar and contoured surfaces, and is able to make 3-dimensional structures layer by layer. The capability of μTM and MIMIC has been demonstrated in the fabrication of single-mode waveguides, waveguide couplers and interferometers. The coupling between waveguides can be tailored by waveguide spacing or the differential in curing time between the waveguides and the cladding. Chapters 4-5 demonstrate the combination of REM and shrinkable polystyrene (PS) films to reduce the feature size of microstructures and to generate microstructures with high aspect ratios on both planar and curved surfaces. A shrinkable PS film is patterned with relief structures, and then heated and shrinks. Thermal shrinkage results in a 100-fold increase in the aspect ratio of the patterned microstructures in the PS film. The microstructures in the shrunken PS films can be transferred to many other materials by REM. Part II (Chapters 6-7) focuses on two issues in the microfabrication using self-assembled monolayers (SAMs) as ultrathin resists. Chapter 6 describes a selective etching solution for transferring patterns of SAMs of alkanethiolates into the underlying layers (e.g., gold, silver, and copper). This etching solution uses thiosulfate as the ligand that coordinates to the metal ions, and ferricyanide as the oxidant. It has been demonstrated to be

  12. ACAPs are arf6 GTPase-activating proteins that function in the cell periphery.

    PubMed

    Jackson, T R; Brown, F D; Nie, Z; Miura, K; Foroni, L; Sun, J; Hsu, V W; Donaldson, J G; Randazzo, P A

    2000-10-30

    The GTP-binding protein ADP-ribosylation factor 6 (Arf6) regulates endosomal membrane trafficking and the actin cytoskeleton in the cell periphery. GTPase-activating proteins (GAPs) are critical regulators of Arf function, controlling the return of Arf to the inactive GDP-bound state. Here, we report the identification and characterization of two Arf6 GAPs, ACAP1 and ACAP2. Together with two previously described Arf GAPs, ASAP1 and PAP, they can be grouped into a protein family defined by several common structural motifs including coiled coil, pleckstrin homology, Arf GAP, and three complete ankyrin-repeat domains. All contain phosphoinositide-dependent GAP activity. ACAP1 and ACAP2 are widely expressed and occur together in the various cultured cell lines we examined. Similar to ASAP1, ACAP1 and ACAP2 were recruited to and, when overexpressed, inhibited the formation of platelet-derived growth factor (PDGF)-induced dorsal membrane ruffles in NIH 3T3 fibroblasts. However, in contrast with ASAP1, ACAP1 and ACAP2 functioned as Arf6 GAPs. In vitro, ACAP1 and ACAP2 preferred Arf6 as a substrate, rather than Arf1 and Arf5, more so than did ASAP1. In HeLa cells, overexpression of either ACAP blocked the formation of Arf6-dependent protrusions. In addition, ACAP1 and ACAP2 were recruited to peripheral, tubular membranes, where activation of Arf6 occurs to allow membrane recycling back to the plasma membrane. ASAP1 did not inhibit Arf6-dependent protrusions and was not recruited by Arf6 to tubular membranes. The additional effects of ASAP1 on PDGF-induced ruffling in fibroblasts suggest that multiple Arf GAPs function coordinately in the cell periphery.

  13. Biomolecular Patterning via Photocatalytic Lithography

    SciTech Connect

    Bearinger, J P; Hiddessen, A L; Wu, K J; Christian, A T; Dugan, L C; Stone, G; Camarero, J; Hinz, A K; Hubbell, J A

    2005-02-18

    We have developed a novel method for patterning surface chemistry: Photocatalytic Lithography. This technique relies on inexpensive stamp materials and light; it does not necessitate mass transport or specified substrates, and the wavelength of light should not limit feature resolution. We have demonstrated the utility of this technique through the patterning of proteins, single cells and bacteria.

  14. Maskless, reticle-free, lithography

    DOEpatents

    Ceglio, Natale M.; Markle, David A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

  15. Advanced oxidation scanning probe lithography

    NASA Astrophysics Data System (ADS)

    Ryu, Yu K.; Garcia, Ricardo

    2017-04-01

    Force microscopy enables a variety of approaches to manipulate and/or modify surfaces. Few of those methods have evolved into advanced probe-based lithographies. Oxidation scanning probe lithography (o-SPL) is the only lithography that enables the direct and resist-less nanoscale patterning of a large variety of materials, from metals to semiconductors; from self-assembled monolayers to biomolecules. Oxidation SPL has also been applied to develop sophisticated electronic and nanomechanical devices such as quantum dots, quantum point contacts, nanowire transistors or mechanical resonators. Here, we review the principles, instrumentation aspects and some device applications of o-SPL. Our focus is to provide a balanced view of the method that introduces the key steps in its evolution, provides some detailed explanations on its fundamentals and presents current trends and applications. To illustrate the capabilities and potential of o-SPL as an alternative lithography we have favored the most recent and updated contributions in nanopatterning and device fabrication.

  16. Advanced oxidation scanning probe lithography.

    PubMed

    Ryu, Yu K; Garcia, Ricardo

    2017-04-07

    Force microscopy enables a variety of approaches to manipulate and/or modify surfaces. Few of those methods have evolved into advanced probe-based lithographies. Oxidation scanning probe lithography (o-SPL) is the only lithography that enables the direct and resist-less nanoscale patterning of a large variety of materials, from metals to semiconductors; from self-assembled monolayers to biomolecules. Oxidation SPL has also been applied to develop sophisticated electronic and nanomechanical devices such as quantum dots, quantum point contacts, nanowire transistors or mechanical resonators. Here, we review the principles, instrumentation aspects and some device applications of o-SPL. Our focus is to provide a balanced view of the method that introduces the key steps in its evolution, provides some detailed explanations on its fundamentals and presents current trends and applications. To illustrate the capabilities and potential of o-SPL as an alternative lithography we have favored the most recent and updated contributions in nanopatterning and device fabrication.

  17. Maskless, reticle-free, lithography

    DOEpatents

    Ceglio, N.M.; Markle, D.A.

    1997-11-25

    A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

  18. Graphic Arts/Offset Lithography.

    ERIC Educational Resources Information Center

    Hoisington, James; Metcalf, Joseph

    This revised curriculum for graphic arts is designed to provide secondary and postsecondary students with entry-level skills and an understanding of current printing technology. It contains lesson plans based on entry-level competencies for offset lithography as identified by educators and industry representatives. The guide is divided into 15…

  19. Therapeutic Targets in the ARF Tumor Suppressor Pathway

    PubMed Central

    Saporita, Anthony J.; Maggi, Leonard B.; Apicelli, Anthony J.; Weber, Jason D.

    2008-01-01

    One of the outstanding fundamental questions in cancer cell biology concerns how cells coordinate cellular growth (or macromolecular synthesis) with cell cycle progression and mitosis. Intuitively, rapidly dividing cells must have some control over these processes; otherwise cells would continue to shrink in volume with every passing cycle, similar to the cytoreductive divisions seen in the very early stages of embryogenesis. The problem is easily solved in unicellular organisms, such as yeast, as their growth rates are entirely dependent on nutrient availability. Multicellular organisms such as mammals, however, must have acquired additional levels of control, as nutrient availability is seldom an issue and the organism has a prodigious capacity to store necessary metabolites in the form of glycogen, lipids, and protein. Furthermore, the specific needs and specialized architecture of tissues must constrain growth for growth’s sake; if not, the necessary function of the organ could be lost. While certainly a myriad of mechanisms for preventing this exist via initiating cell death (e.g. apoptosis, autophagy, necrosis), these all depend on some external cue, such as death signals, hypoxia, lack of nutrients or survival signals. However there must also be some cell autonomous method for surveying against inappropriate growth signals (such as oncogenic stress) that occur in a stochastic fashion, possibly as a result of random mutations. The ARF tumor suppressor seems to fulfill that role, as its expression is near undetectable in normal tissues, yet is potently induced by oncogenic stress (such as overexpression of oncogenic Ras or myc). As a result of induced expression of ARF, the tumor suppressor protein p53 is stabilized and promotes cell cycle arrest. Mutations or epigenetic alterations of the INK4a/Arf locus are second only to p53 mutations in cancer cells, and in some cancers, alterations in both Arf and p53 observed, suggesting that these two tumor

  20. Double patterning in lithography for 65nm node with oxidation process

    NASA Astrophysics Data System (ADS)

    Jeong, Eunsoo; Kim, Jeahee; Choi, Kwangsun; Lee, Minkon; Lee, Doosung; Kim, Myungsoo; Park, Chansik

    2008-03-01

    Recently, in order to increase the number of transistors in wafer by small feature size, optical lithography has been changed to low wavelength from 365nm to 193nm and high NA of 0.93. And further wavelength is aggressively shifting to 13.5nm for more small feature size, i.e., Extreme Ultra Violet Lithography(EUVL), a kind of Next Generation Lithography(NGL)1. And other technologies are developed such as water immersion(193nm) and photo resist Double Patterning(DP). Immersion lens system has high NA up to 1.3 due to high n of water(n=1.44 at 193nm), the parameter k1 is process constant, but 0.25 is a tough limit at a equal line and space, if we use immersion lens with 193nm wavelength than limit of resolution is 37nm. Especially, Double Exposure Technique(DET) process is widely studied because of the resolution enhancement ability using a same material and machine, despite of process complication. And SADP(Self Aligned Double Patten) is newly researched for overlay and LER(Line Edge Roughness) enhancement. In this paper, we illustrate the feasibility of the shift double pattern for 65nm-node flash using a 193nm light dipole source and the possibility of decrease minimum feature size using a property of silicon shrinkage during thermal oxidation process.

  1. Plasmonic films based on colloidal lithography.

    PubMed

    Ai, Bin; Yu, Ye; Möhwald, Helmuth; Zhang, Gang; Yang, Bai

    2014-04-01

    This paper reviews recent advances in the field of plasmonic films fabricated by colloidal lithography. Compared with conventional lithography techniques such as electron beam lithography and focused ion beam lithography, the unconventional colloidal lithography technique with advantages of low-cost and high-throughput has made the fabrication process more efficient, and moreover brought out novel films that show remarkable surface plasmon features. These plasmonic films include those with nanohole arrays, nanovoid arrays and nanoshell arrays with precisely controlled shapes, sizes, and spacing. Based on these novel nanostructures, optical and sensing performances can be greatly enhanced. The introduction of colloidal lithography provides not only efficient fabrication processes but also plasmonic films with unique nanostructures, which are difficult to be fabricated by conventional lithography techniques.

  2. The small G-protein Arf6GTP recruits the AP-2 adaptor complex to membranes.

    PubMed

    Paleotti, Olivia; Macia, Eric; Luton, Frederic; Klein, Stephanie; Partisani, Mariagrazia; Chardin, Pierre; Kirchhausen, Tom; Franco, Michel

    2005-06-03

    The small GTP-binding protein ADP-ribosylation factor 6 (Arf6) is involved in plasma membrane/endosomes trafficking. However, precisely how the activation of Arf6 regulates vesicular transport is still unclear. Here, we show that, in vitro, recombinant Arf6GTP recruits purified clathrin-adaptor complex AP-2 (but not AP-1) onto phospholipid liposomes in the absence of phosphoinositides. We also show that phosphoinositides and Arf6 tightly cooperate to translocate AP-2 to the membrane. In vivo, Arf6GTP (but not Arf6GDP) was found associated to AP-2. The expression of the GTP-locked mutant of Arf6 leads to the plasma membrane redistribution of AP-2 in Arf6GTP-enriched areas. Finally, we demonstrated that the expression of the GTP-locked mutant of Arf6 inhibits transferrin receptor internalization without affecting its recycling. Altogether, our results demonstrated that Arf6GTP interacts specifically with AP-2 and promotes its membrane recruitment. These findings strongly suggest that Arf6 plays a major role in clathrin-mediated endocytosis by directly controlling the assembly of the AP-2/clathrin coat.

  3. CD and defect improvement challenges for immersion processes

    NASA Astrophysics Data System (ADS)

    Ehara, Keisuke; Ema, Tatsuhiko; Yamasaki, Toshinari; Nakagawa, Seiji; Ishitani, Seiji; Morita, Akihiko; Kim, Jeonghun; Kanaoka, Masashi; Yasuda, Shuichi; Asai, Masaya

    2009-03-01

    The intention of this study is to develop an immersion lithography process using advanced track solutions to achieve world class critical dimension (CD) and defectivity performance in a state of the art manufacturing facility. This study looks at three important topics for immersion lithography: defectivity, CD control, and wafer backside contamination. The topic of defectivity is addressed through optimization of coat, develop, and rinse processes as well as implementation of soak steps and bevel cleaning as part of a comprehensive defect solution. Develop and rinse processing techniques are especially important in the effort to achieve a zero defect solution. Improved CD control is achieved using a biased hot plate (BHP) equipped with an electrostatic chuck. This electrostatic chuck BHP (eBHP) is not only able to operate at a very uniform temperature, but it also allows the user to bias the post exposure bake (PEB) temperature profile to compensate for systematic within-wafer (WiW) CD non-uniformities. Optimized CD results, pre and post etch, are presented for production wafers. Wafer backside particles can cause focus spots on an individual wafer or migrate to the exposure tool's wafer stage and cause problems for a multitude of wafers. A basic evaluation of the cleaning efficiency of a backside scrubber unit located on the track was performed as a precursor to a future study examining the impact of wafer backside condition on scanner focus errors as well as defectivity in an immersion scanner.

  4. The human ARF tumor suppressor senses blastema activity and suppresses epimorphic tissue regeneration.

    PubMed

    Hesse, Robert G; Kouklis, Gayle K; Ahituv, Nadav; Pomerantz, Jason H

    2015-11-17

    The control of proliferation and differentiation by tumor suppressor genes suggests that evolution of divergent tumor suppressor repertoires could influence species' regenerative capacity. To directly test that premise, we humanized the zebrafish p53 pathway by introducing regulatory and coding sequences of the human tumor suppressor ARF into the zebrafish genome. ARF was dormant during development, in uninjured adult fins, and during wound healing, but was highly expressed in the blastema during epimorphic fin regeneration after amputation. Regenerative, but not developmental signals resulted in binding of zebrafish E2f to the human ARF promoter and activated conserved ARF-dependent Tp53 functions. The context-dependent activation of ARF did not affect growth and development but inhibited regeneration, an unexpected distinct tumor suppressor response to regenerative versus developmental environments. The antagonistic pleiotropic characteristics of ARF as both tumor and regeneration suppressor imply that inducing epimorphic regeneration clinically would require modulation of ARF -p53 axis activation.

  5. Multi-Push (MP) Acoustic Radiation Force (ARF) Ultrasound for Assessing Tissue Viscoelasticity, In Vivo*

    PubMed Central

    Scola, Mallory R.; Baggesen, Leslie M.; Gallippi, Caterina M.

    2013-01-01

    Acoustic radiation force (ARF) ultrasound is a method of elastographic imaging in which micron-scale tissue displacements, induced and tracked by ultrasound, reflect clinically relevant tissue mechanical properties. Our laboratory has recently shown that tissue viscoelasticity is assessed using the novel Multi-Push (MP) ARF method. MP ARF applies the Voigt model for viscoelastic materials and compares the displacements achieved by successive ARF excitations to qualitatively or quantitatively represent the relaxation time for constant stress, which is a direct descriptor of the viscoelastic response of the tissue. We have demonstrated MP ARF in custom viscoelastic tissue mimicking materials and implemented the method in vivo in canine muscle and human renal allografts, with strong spatial correlation between MP ARF findings and histochemical features and previously reported mechanical changes with renal disease. These data support that noninvasive MP ARF is capable of clinically relevant assessment of tissue viscoelastic properties. PMID:23366389

  6. Expression of a dominant allele of human ARF1 inhibits membrane traffic in vivo

    PubMed Central

    1994-01-01

    ADP-ribosylation factor (ARF) proteins and inhibitory peptides derived from ARFs have demonstrated activities in a number of in vitro assays that measure ER-to-Golgi and intra-Golgi transport and endosome fusion. To better understand the roles of ARF proteins in vivo, stable cell lines were obtained from normal rat kidney (NRK) cells transfected with either wild-type or a dominant activating allele ([Q71L]) of the human ARF1 gene under the control of the interferon-inducible mouse Mx1 promoter. Upon addition of interferon, expression of ARF1 proteins increased with a half-time of 7-8 h, as determined by immunoblot analysis. Induction of mutant ARF1, but not wild-type ARF1, led to an inhibition of protein secretion with kinetics similar to that observed for induction of protein expression. Examination of the Golgi apparatus and the ER by indirect immunofluorescence or transmission electron microscopy revealed that expression of low levels of mutant ARF1 protein correlated with a dramatic increase in vesiculation of the Golgi apparatus and expansion of the ER lumen, while expression of substantially higher levels of wild-type ARF1 had no discernible effect. Endocytosis was also inhibited by expression of mutant ARF1, but not by the wild-type protein. Finally, the expression of [Q71L]ARF1, but not wild-type ARF1, antagonized the actions of brefeldin A, as determined by the delayed loss of ARF and beta-COP from Golgi membranes and disruption of the Golgi apparatus. General models for the actions of ARF1 in membrane traffic events are discussed. PMID:8294513

  7. X-ray lithography source

    DOEpatents

    Piestrup, Melvin A.; Boyers, David G.; Pincus, Cary

    1991-01-01

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

  8. X-ray lithography source

    DOEpatents

    Piestrup, M.A.; Boyers, D.G.; Pincus, C.

    1991-12-31

    A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits is disclosed. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-priced X-ray source for lithography. 26 figures.

  9. EUV Lithography: New Metrology Challenges

    SciTech Connect

    Wood, Obert

    2007-09-26

    Extreme ultraviolet lithography is one of the most promising printing techniques for high volume semiconductor manufacturing at the 22 nm half-pitch device node and beyond. Because its imaging wavelength is approximately twenty times shorter than those currently in use (13.5 nm versus 193-248 nm) and because EUV optics and masks must be provided with highly-precise reflective multilayer coatings, EUV lithography presents a number of new and difficult metrology challenges. In this paper, the current status of the metrology tools being used to characterize the figure and finish of EUV mirror surfaces, the defectivity and flatness of EUV mask blanks and the outgassing rates of EUV resist materials are discussed.

  10. Immersive cyberspace system

    NASA Technical Reports Server (NTRS)

    Park, Brian V. (Inventor)

    1997-01-01

    An immersive cyberspace system is presented which provides visual, audible, and vibrational inputs to a subject remaining in neutral immersion, and also provides for subject control input. The immersive cyberspace system includes a relaxation chair and a neutral immersion display hood. The relaxation chair supports a subject positioned thereupon, and places the subject in position which merges a neutral body position, the position a body naturally assumes in zero gravity, with a savasana yoga position. The display hood, which covers the subject's head, is configured to produce light images and sounds. An image projection subsystem provides either external or internal image projection. The display hood includes a projection screen moveably attached to an opaque shroud. A motion base supports the relaxation chair and produces vibrational inputs over a range of about 0-30 Hz. The motion base also produces limited translation and rotational movements of the relaxation chair. These limited translational and rotational movements, when properly coordinated with visual stimuli, constitute motion cues which create sensations of pitch, yaw, and roll movements. Vibration transducers produce vibrational inputs from about 20 Hz to about 150 Hz. An external computer, coupled to various components of the immersive cyberspace system, executes a software program and creates the cyberspace environment. One or more neutral hand posture controllers may be coupled to the external computer system and used to control various aspects of the cyberspace environment, or to enter data during the cyberspace experience.

  11. Nanoimprint lithography for microfluidics manufacturing

    NASA Astrophysics Data System (ADS)

    Kreindl, Gerald; Matthias, Thorsten

    2013-12-01

    The history of imprint technology as lithography method for pattern replication can be traced back to 1970's but the most significant progress has been made by the research group of S. Chou in the 1990's. Since then, it has become a popular technique with a rapidly growing interest from both research and industrial sides and a variety of new approaches have been proposed along the mainstream scientific advances. Nanoimprint lithography (NIL) is a novel method for the fabrication of micro/nanometer scale patterns with low cost, high throughput and high resolution. Unlike traditional optical lithographic approaches, which create pattern through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the resist and can therefore achieve resolutions beyond the limitations set by light diffraction or beam scattering that are encountered in conventional lithographic techniques. The ability to fabricate structures from the micro- to the nanoscale with high precision in a wide variety of materials is of crucial importance to the advancement of micro- and nanotechnology and the biotech- sciences as a whole and will be discussed in this paper. Nanoimprinting can not only create resist patterns, as in lithography, but can also imprint functional device structures in various polymers, which can lead to a wide range of applications in electronics, photonics, data storage, and biotechnology.

  12. X ray lithography in Japan

    NASA Astrophysics Data System (ADS)

    Clemens, James T.; Hill, Robert W.; Cerrina, Franco; Fuller, Gene E.; Pease, R. F.

    1991-10-01

    Integrated circuits (semiconductors) are the key components of modern computers, communication systems, consumer electronics, and the new generations of smart machines and instruments. Japan's strong position and growing influence in the manufacture of semiconductors and systems based on them is well known and well documented. Microlithography is one the most critical elements of the semiconductor manufacturing process because it determines the minimum feature size and the functional capabilities of the semiconductor. Because it is used many times in the manufacturing sequence, the quality of the microlithography process (i.e., number of defects, control for feature size, etc.) is critical in determining the yield and cost of semiconductors and hence the competitiveness of the electronics industry. At present all volume semiconductor manufacturing is done with optical UV (ultraviolet) projection lithography, twenty-year-old photographic technology which has been and is still evolving. There are many issues that limit the technical capability and cost-effectiveness of UV lithography, and thus, alternate lithographic techniques are continuously being researched and developed. X-ray lithography, which was invented in the early 1970's, holds the promise of providing higher yields in manufacturing semiconductors by virtue of enhanced process latitude, process robustness, and resolution.

  13. IGF-1 drives chromogranin A secretion via activation of Arf1 in human neuroendocrine tumour cells

    PubMed Central

    Münzberg, Christin; Höhn, Katharina; Krndija, Denis; Maaß, Ulrike; Bartsch, Detlef K; Slater, Emily P; Oswald, Franz; Walther, Paul; Seufferlein, Thomas; von Wichert, Götz

    2015-01-01

    Hypersecretion is the major symptom of functional neuroendocrine tumours. The mechanisms that contribute to this excessive secretion of hormones are still elusive. A key event in secretion is the exit of secretory products from the Golgi apparatus. ADP-ribosylation factor (Arf) GTPases are known to control vesicle budding and trafficking, and have a leading function in the regulation of formation of secretory granula at the Golgi. Here, we show that Arf1 is the predominant Arf protein family member expressed in the neuroendocrine pancreatic tumour cell lines BON and QGP-1. In BON cells Arf1 colocalizes with Golgi markers as well as chromogranin A, and shows significant basal activity. The inhibition of Arf1 activity or expression significantly impaired secretion of chromogranin A. Furthermore, we show that the insulin-like growth factor 1 (IGF-1), a major regulator of growth and secretion in BON cells, induces Arf1 activity. We found that activation of Arf1 upon IGF-1 receptor stimulation is mediated by MEK/ERK signalling pathway in BON and QGP-1 cells. Moreover, the activity of Arf1 in BON cells is mediated by autocrinely secreted IGF-1, and concomitantly, autocrine IGF1 secretion is maintained by Arf1 activity. In summary, our data indicate an important regulatory role for Arf1 at the Golgi in hypersecretion in neuroendocrine cancer cells. PMID:25754106

  14. IGF-1 drives chromogranin A secretion via activation of Arf1 in human neuroendocrine tumour cells.

    PubMed

    Münzberg, Christin; Höhn, Katharina; Krndija, Denis; Maaß, Ulrike; Bartsch, Detlef K; Slater, Emily P; Oswald, Franz; Walther, Paul; Seufferlein, Thomas; von Wichert, Götz

    2015-05-01

    Hypersecretion is the major symptom of functional neuroendocrine tumours. The mechanisms that contribute to this excessive secretion of hormones are still elusive. A key event in secretion is the exit of secretory products from the Golgi apparatus. ADP-ribosylation factor (Arf) GTPases are known to control vesicle budding and trafficking, and have a leading function in the regulation of formation of secretory granula at the Golgi. Here, we show that Arf1 is the predominant Arf protein family member expressed in the neuroendocrine pancreatic tumour cell lines BON and QGP-1. In BON cells Arf1 colocalizes with Golgi markers as well as chromogranin A, and shows significant basal activity. The inhibition of Arf1 activity or expression significantly impaired secretion of chromogranin A. Furthermore, we show that the insulin-like growth factor 1 (IGF-1), a major regulator of growth and secretion in BON cells, induces Arf1 activity. We found that activation of Arf1 upon IGF-1 receptor stimulation is mediated by MEK/ERK signalling pathway in BON and QGP-1 cells. Moreover, the activity of Arf1 in BON cells is mediated by autocrinely secreted IGF-1, and concomitantly, autocrine IGF1 secretion is maintained by Arf1 activity. In summary, our data indicate an important regulatory role for Arf1 at the Golgi in hypersecretion in neuroendocrine cancer cells.

  15. SlARF2a plays a negative role in mediating axillary shoot formation

    PubMed Central

    Xu, Tao; Liu, Xin; Wang, Rong; Dong, Xiufen; Guan, Xiaoxi; Wang, Yanling; Jiang, Yun; Shi, Zihang; Qi, Mingfang; Li, Tianlai

    2016-01-01

    SlARF2a is expressed in most plant organs, including roots, leaves, flowers and fruits. A detailed expression study revealed that SlARF2a is mainly expressed in the leaf nodes and cross-sections of the nodes indicated that SlARF2a expression is restricted to vascular organs. Decapitation or the application of 6-benzylaminopurine (BAP) can initially promote axillary shoots, during which SlARF2a expression is significantly reduced. Down-regulation of SlARF2a expression results in an increased frequency of dicotyledons and significantly increased lateral organ development. Stem anatomy studies have revealed significantly altered cambia and phloem in tomato plants expressing down-regulated levels of ARF2a, which is associated with obvious alterations in auxin distribution. Further analysis has revealed that altered auxin transport may occur via altered pin expression. To identify the interactions of AUX/IAA and TPL with ARF2a, four axillary shoot development repressors that are down-regulated during axillary shoot development, IAA3, IAA9, SlTPL1 and SlTPL6, were tested for their direct interactions with ARF2a. Although none of these repressors are directly involved in ARF2a activity, similar expression patterns of IAA3, IAA9 and ARF2a implied they might work tightly in axillary shoot formation and other developmental processes. PMID:27645097

  16. Allosteric properties of PH domains in Arf regulatory proteins.

    PubMed

    Roy, Neeladri Sekhar; Yohe, Marielle E; Randazzo, Paul A; Gruschus, James M

    2016-01-01

    Pleckstrin Homology (PH) domains bind phospholipids and proteins. They are critical regulatory elements of a number enzymes including guanine nucleotide exchange factors (GEFs) and GTPase-activating proteins (GAPs) for Ras-superfamily guanine nucleotide binding proteins such as ADP-ribosylation factors (Arfs). Recent studies have indicated that many PH domains may bind more than one ligand cooperatively. Here we discuss the molecular basis of PH domain-dependent allosteric behavior of 2 ADP-ribosylation factor exchange factors, Grp1 and Brag2, cooperative binding of ligands to the PH domains of Grp1 and the Arf GTPase-activating protein, ASAP1, and the consequences for activity of the associated catalytic domains.

  17. Gasoline immersion injury

    SciTech Connect

    Simpson, L.A.; Cruse, C.W.

    1981-01-01

    Chemical burns and pulmonary complications are the most common problems encountered in the patient immersed in gasoline. Our patient demonstrated a 46-percent total-body-surface area, partial-thickness chemical burn. Although he did not develop bronchitis or pneumonitis, he did display persistent atelectasis, laryngeal edema, and subsequent upper airway obstruction. This had not previously been reported in gasoline inhalation injuries. Hydrocarbon hepatitis secondary to the vascular endothelial damage is apparently a reversible lesion with no reported long-term sequelae. Gasoline immersion injuries may be a series multisystem injury and require the burn surgeon to take a multisystem approach to its diagnosis and treatment.

  18. Maskless, resistless ion beam lithography

    SciTech Connect

    Ji, Qing

    2003-01-01

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O2+, BF2+, P+ etc., for surface modification and doping applications. With optimized source condition, around 85% of BF2+, over 90% of O2+ and P+ have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He+ beam is as high as 440 A/cm2 • Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O2+ ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O2+ ions with the dose of 1015 cm-2. The oxide can then serve as a hard mask for patterning of the Si film. The

  19. ArfGAP1 is a GTPase Activating Protein for LRRK2: Reciprocal Regulation of ArfGAP1 by LRRK2

    PubMed Central

    Xiong, Yulan; Yuan, Changqing; Chen, Rong; Dawson, Ted M.; Dawson, Valina L.

    2012-01-01

    Both sporadic and autosomal dominant forms of Parkinson’s disease (PD) have been causally linked to mutations in leucine-rich repeat kinase 2 (LRRK2), a large protein with multiple domains. The kinase domain plays an important role in LRRK2 mediated toxicity. While a number of investigations have focused on LRRK2 kinase activity, less is known about the GTPase function of LRRK2. The activity of GTPases is regulated by GTPase activating proteins (GAPs) and GTP exchange factors (GEFs). Here, we identify ArfGAP1 as the first GAP for LRRK2. ArfGAP1 binds LRRK2 predominantly via the WD40 and kinase domain of LRRK2 and it increases LRRK2 GTPase activity and regulates LRRK2 toxicity both in vitro and in vivo in Drosophila melanogaster. Unexpectedly, ArfGAP1 is a LRRK2 kinase substrate whose GAP activity is inhibited by LRRK2, while wild type and G2019S LRRK2 autophosphorylation and kinase activity are significantly reduced in the presence of ArfGAP1. Overexpressed ArfGAP1 exhibits toxicity that is reduced by LRRK2 both in vitro and in vivo. Δ64-ArfGAP1, a dominant negative ArfGAP1, and shRNA knockdown of ArfGAP1 reduce LRRK2 toxicity. Thus, LRRK2 and ArfGAP1 reciprocally regulate the activity of each other. Our results provide insight into the basic pathobiology of LRRK2 and indicate an important role for the GTPase domain and ArfGAP1 in LRRK2 mediated toxicity. These data suggest that agents targeted towards regulation of LRRK2 GTP hydrolysis might be therapeutic agents for the treatment of Parkinson’s disease. PMID:22423108

  20. Hierarchically Ordered Plasmonic Mask for Photo-lithography

    NASA Astrophysics Data System (ADS)

    Kim, Woo Soo; Thomas, Edwin L.

    2008-03-01

    A new high density nanolithography method for the fabrication of a hierarchically ordered plasmonic mask employs silver (Ag) nano-particles (NPs) attached to the surface of an amine- functionalized two-dimensional (2D) pattern fabricated by laser interference lithography (IL). The bi-functional sol-gel hybrid material (BFHM) is a negative-tone resist and can be directly patterned by IL. Since the BFHM has both an amine-function and a methacryl function on each molecule, photopolymerization provides network formation and a set of binding sites for the Ag NPs. The Ag NPs were then attached onto the BFHM pillars by immersing the patterned sample in a solution. Hierarchically ordered arrays of Ag NPs could be made by a block copolymer comprised of 40nm diameter spherical P2VP domains having a spacing of 88nm, forming a hexagonal pattern covering the hexagonally arrayed BFHM pillars. Lithography experiments using 430 nm wavelength light demonstrate transfer of both a 350 nm periodic pattern and a 88nm patten to a positive-tone photoresist via plasmonic field enhancement arising from the collective and individual excitation of the closely spaced interacting Ag NPs on the hierarchically patterned BFHM.

  1. Block-based mask optimization for optical lithography.

    PubMed

    Ma, Xu; Song, Zhiyang; Li, Yanqiu; Arce, Gonzalo R

    2013-05-10

    Pixel-based optical proximity correction (PBOPC) methods have been developed as a leading-edge resolution enhancement technique (RET) for integrated circuit fabrication. PBOPC independently modulates each pixel on the reticle, which tremendously increases the mask's complexity and, at the same time, deteriorates its manufacturability. Most current PBOPC algorithms recur to regularization methods or a mask manufacturing rule check (MRC) to improve the mask manufacturability. Typically, these approaches either fail to satisfy manufacturing constraints on the practical product line, or lead to suboptimal mask patterns that may degrade the lithographic performance. This paper develops a block-based optical proximity correction (BBOPC) algorithm to pursue the optimal masks with manufacturability compliance, where the mask is shaped by a set of overlapped basis blocks rather than pixels. BBOPC optimization is formulated based on a vector imaging model, which is adequate for both dry lithography with lower numerical aperture (NA), and immersion lithography with hyper-NA. The BBOPC algorithm successively optimizes the main features (MF) and subresolution assist features (SRAF) based on a modified conjugate gradient method. It is effective at smoothing any unmanufacturable jogs along edges. A weight matrix is introduced in the cost function to preserve the edge fidelity of the printed images. Simulations show that the BBOPC algorithm can improve lithographic imaging performance while maintaining mask manufacturing constraints.

  2. Immersion and the Internet.

    ERIC Educational Resources Information Center

    Birch, Gary; Matas, Cristina Poyatos

    1999-01-01

    Discusses a research project that aims to study the grammatical development of two groups of language immersion students, one that is participating in an Internet project involving collaboration with learners in France and Canada, and another that is exposed to the teaching of grammar that has been integrated with content area studies. (Author/VWL)

  3. P19ARF stabilizes p53 by blocking nucleo-cytoplasmic shuttling of Mdm2

    PubMed Central

    Tao, Weikang; Levine, Arnold J.

    1999-01-01

    The INK4a-ARF locus encodes two distinct tumor suppressors, p16INK4a and p19ARF. Whereas p16INK4a restrains cell growth through preventing phosphorylation of the retinoblastoma protein, p19ARF acts by attenuating Mdm2-mediated degradation of p53, thereby stabilizing p53. Recent data indicate that Mdm2 shuttles between the nucleus and the cytoplasm and that nucleo-cytoplasmic shuttling of Mdm2 is essential for Mdm2’s ability to promote p53 degradation. Therefore, Mdm2 must export p53 from the nucleus to the cytoplasm where it targets p53 for degradation. We show here that coexpression of p19ARF blocks the nucleo-cytoplasmic shuttling of Mdm2. Moreover, subnuclear localization of Mdm2 changes from the nucleoplasm to the nucleolus in a shuttling time-dependent manner, whereas p19ARF is exclusively located in the nucleolus. In heterokaryons containing Mdm2 and p19ARF, the longer the Mdm2 shuttling is allowed, the more Mdm2 protein colocalizes with p19ARF in the nucleolus, implying that Mdm2 moves from the nucleoplasm to the nucleolus and then associates with p19ARF there. Furthermore, whether or not Mdm2 colocalizes with p19ARF in the nucleolus, p19ARF prevents Mdm2 shuttling. This observation suggests that Mdm2 might be exported through the nucleolus and p19ARF could inhibit the nuclear export of Mdm2 by tethering Mdm2 in the nucleolus. Taken together, p19ARF could stabilize p53 by inhibiting the nuclear export of Mdm2. PMID:10359817

  4. Substrate specificities and activities of AZAP family Arf GAPs in vivo.

    PubMed

    Cuthbert, Ellen J; Davis, Kathryn K; Casanova, James E

    2008-01-01

    The ADP-ribosylation factor (Arf) GTPases are important regulators of vesicular transport in eukaryotic cells. Like other GTPases, the Arfs require guanine nucleotide exchange factors to facilitate GTP loading and GTPase-activating proteins (GAPs) to promote GTP hydrolysis. Whereas there are only six mammalian Arfs, the human genome encodes over 20 proteins containing Arf GAP domains. A subset of these, referred to as AZAPs (Randazzo PA, Hirsch DS. Cell Signal 16: 401-413, 2004), are characterized by the presence of at least one NH(2)-terminal pleckstrin homology domain and two or more ankyrin repeats following the GAP domain. The substrate specificities of these proteins have been previously characterized by using in vitro assay systems. However, a limitation of such assays is that they may not accurately represent intracellular conditions, including posttranslational modifications, or subcellular compartmentalization. Here we present a systematic analysis of the GAP activity of seven AZAPs in vivo, using an assay for measurement of cellular Arf-GTP (Santy LC, Casanova JE. J Cell Biol 154: 599-610, 2001). In agreement with previous in vitro results, we found that ACAP1 and ACAP2 have robust, constitutive Arf6 GAP activity in vivo, with little activity toward Arf1. In contrast, although ARAP1 was initially reported to be an Arf1 GAP, we found that it acts primarily on Arf6 in vivo. Moreover, this activity appears to be regulated through a mechanism involving the NH(2)-terminal sterile-alpha motif. AGAP1 is unique among the AZAPs in its specificity for Arf1, and this activity is dependent on its NH(2)-terminal GTPase-like domain. Finally, we found that expression of AGAP1 induces a surprising reciprocal activation of Arf6, which suggests that regulatory cross talk exists among Arf isoforms.

  5. Expression of p16INK4A and p14ARF in hematological malignancies.

    PubMed

    Taniguchi, T; Chikatsu, N; Takahashi, S; Fujita, A; Uchimaru, K; Asano, S; Fujita, T; Motokura, T

    1999-11-01

    The INK4A/ARF locus yields two tumor suppressors, p16INK4A and p14ARF, and is frequently deleted in human tumors. We studied their mRNA expressions in 41 hematopoietic cell lines and in 137 patients with hematological malignancies; we used a quantitative reverse transcription-PCR assay. Normal peripheral bloods, bone marrow and lymph nodes expressed little or undetectable p16INK4A and p14ARF mRNAs, which were readily detected in 12 and 17 of 41 cell lines, respectively. Patients with hematological malignancies frequently lacked p16INK4A expression (60/137) and lost p14ARF expression less frequently (19/137, 13.9%). Almost all patients without p14ARF expression lacked p16INK4A expression, which may correspond to deletions of the INK4A/ARF locus. Undetectable p16INK4A expression with p14ARF expression in 41 patients may correspond to p16INK4A promoter methylation or to normal expression status of the p16INK4A gene. All patients with follicular lymphoma (FL), myeloma or acute myeloid leukemia (AML) expressed p14ARF while nine of 23 patients with diffuse large B cell lymphoma (DLBCL) lost p14ARF expression. Patients with ALL, AML or blast crisis of chronic myelogenous leukemia expressed abundant p16INK4A mRNAs more frequently than patients with other diseases (12/33 vs 6/104, P < 0.01). Patients with FL and high p14ARF expression had a significantly shorter survival time while survival for patients with DLBCL and increased p14ARF expression tended to be longer. These observations indicate that p16INK4A and p14ARF expression is differentially affected among hemato- logical malignancies and that not only inactivation but also increased expression may have clinical significance.

  6. The Arf GTPase-Activating Protein Family Is Exploited by Salmonella enterica Serovar Typhimurium To Invade Nonphagocytic Host Cells

    PubMed Central

    Davidson, Anthony C.; Humphreys, Daniel; Brooks, Andrew B. E.; Hume, Peter J.

    2015-01-01

    ABSTRACT To establish intracellular infections, Salmonella bacteria trigger host cell membrane ruffling and invasion by subverting cellular Arf guanine nucleotide exchange factors (GEFs) that activate Arf1 and Arf6 GTPases by promoting GTP binding. A family of cellular Arf GTPase-activating proteins (GAPs) can downregulate Arf signaling by stimulating GTP hydrolysis, but whether they do this during infection is unknown. Here, we uncovered a remarkable role for distinct Arf GAP family members in Salmonella invasion. The Arf6 GAPs ACAP1 and ADAP1 and the Arf1 GAP ASAP1 localized at Salmonella-induced ruffles, which was not the case for the plasma membrane-localized Arf6 GAPs ARAP3 and GIT1 or the Golgi-associated Arf1 GAP1. Surprisingly, we found that loss of ACAP1, ADAP1, or ASAP1 impaired Salmonella invasion, revealing that GAPs cannot be considered mere terminators of cytoskeleton remodeling. Salmonella invasion was restored in Arf GAP-depleted cells by expressing fast-cycling Arf derivatives, demonstrating that Arf GTP/GDP cycles facilitate Salmonella invasion. Consistent with this view, both constitutively active and dominant-negative Arf derivatives that cannot undergo GTP/GDP cycles inhibited invasion. Furthermore, we demonstrated that Arf GEFs and GAPs colocalize at invading Salmonella and collaborate to drive Arf1-dependent pathogen invasion. This study revealed that Salmonella bacteria exploit a remarkable interplay between Arf GEFs and GAPs to direct cycles of Arf GTPase activation and inactivation. These cycles drive Salmonella cytoskeleton remodeling and enable intracellular infections. PMID:25670778

  7. Tumor suppressor ARF regulates tissue microenvironment and tumor growth through modulation of macrophage polarization

    PubMed Central

    Jiménez-García, Lidia; Herranz, Sandra; Higueras, María Angeles

    2016-01-01

    Tumor microenvironment has been described to play a key role in tumor growth, progression, and metastasis. Macrophages are a major cellular constituent of the tumor stroma, and particularly tumor associated macrophages (TAMs or M2-like macrophages) exert important immunosuppressive activity and a pro-tumoral role within the tumor microenvironment. Alternative-reading frame (ARF) gene is widely inactivated in human cancer. We have previously demonstrated that ARF deficiency severely impairs inflammatory response establishing a new role for ARF in the regulation of innate immunity. On the basis of these observations, we hypothesized that ARF may also regulates tumor growth through recruitment and modulation of the macrophage phenotype in the tumor microenvironment. Xenograft assays of B16F10 melanoma cells into ARF-deficient mice resulted in increased tumor growth compared to those implanted in WT control mice. Tumors from ARF-deficient mice exhibited significantly increased number of TAMs as well as microvascular density. Transwell assays showed crosstalk between tumor cells and macrophages. On the one hand, ARF-deficient macrophages modulate migratory ability of the tumor cells. And on the other, tumor cells promote the skewing of ARF−/− macrophages toward a M2-type polarization. In conclusion, these results demonstrate that ARF deficiency facilitates the infiltration of macrophages into the tumor mass and favors their polarization towards a M2 phenotype, thus promoting tumor angiogenesis and tumor growth. This work provides novel information about the critical role of ARF in the modulation of tumor microenvironment. PMID:27572316

  8. Arf6 regulates EGF-induced internalization of E-cadherin in breast cancer cells.

    PubMed

    Xu, Rui; Zhang, Yujie; Gu, Luo; Zheng, Jianchao; Cui, Jie; Dong, Jing; Du, Jun

    2015-01-01

    E-cadherin internalization facilitates dissolution of adherens junctions and promotes tumor cell epithelial-mesenchymal transition (EMT) and migration. Our previous results have shown that Arf6 exerts pro-migratory action in breast cancer cells after EGF stimulation. Despite the fact that EGF signaling stimulates EMT of breast cancer cells, the effect of Arf6 on internalization of E-cadherin of breast cancer cells under EGF treatment remains to be determined. Here, we showed that EGF dose-dependently stimulated E-cadherin internalization by MCF-7 cells with the maximal effect at 50 ng/ml. Meanwhile, EGF treatment markedly increased Arf6 activation. Arf6 was involved in complexes of E-cadherin, and more E-cadherin was pulled down with Arf6 when the activity of the latter was increased. Immunoblotting and immunofluorescence assays showed that transfection breast cancer cells with Arf6-T27N or Arf6 siRNA suppressed EGF-induced E-cadherin internalization. Taken together, our study demonstrated that Arf6 activation plays a potential role in EGF-induced E-cadherin internalization, providing new mechanism underlying the effect of Arf6 on promoting breast cancer cell metastasis.

  9. Isolation and characterization of mammalian cells expressing the Arf promoter during eye development.

    PubMed

    Iqbal, Nida S; Xu, Lin; Devitt, Caitlin C; Skapek, Stephen X

    2014-05-01

    Although many researchers have successfully uncovered novel functions of the tumor suppressor p19(Arf) utilizing various types of cultured cancer cells and immortalized fibroblasts, these systems do not accurately reflect the endogenous environment in which Arf is developmentally expressed. We addressed this by isolating perivascular cells (PVCs) from the primary vitreous of the mouse eye. This rare cell type normally expresses the p19(Arf) tumor suppressor in a non-pathological, developmental context. We utilized fluorescence activated cell sorting (FACS) to purify the cells by virtue of a GFP reporter driven by the native Arf promoter and then characterized their morphology and gene expression pattern. We further examined the effects of reintroduction of Arf expression in the Arf(GFP/GFP) PVCs to verify expected downstream effectors of p19(Arf) as well as uncover novel functions of Arf as a regulator of vasculogenesis. This methodology and cell culture model should serve as a useful tool to examine p19(Arf) biology.

  10. Discharge produced plasma source for EUV lithography

    NASA Astrophysics Data System (ADS)

    Borisov, V.; Eltzov, A.; Ivanov, A.; Khristoforov, O.; Kirykhin, Yu.; Vinokhodov, A.; Vodchits, V.; Mishhenko, V.; Prokofiev, A.

    2007-04-01

    Extreme ultraviolet (EUV) radiation is seen as the most promising candidate for the next generation of lithography and semiconductor chip manufacturing for the 32 nm node and below. The paper describes experimental results obtained with discharge produced plasma (DPP) sources based on pinch effect in a Xe and Sn vapour as potential tool for the EUV lithography. Problems of DPP source development are discussed.

  11. Kula Kaiapuni: Hawaiian Immersion Schools.

    ERIC Educational Resources Information Center

    Kame'eleihiwa, Lilikala

    1992-01-01

    The Hawaii State Department of Education offers a growing number of Hawaiian language immersion schools for its students. The article presents the history of immersion schools in Hawaii, examining criticisms of immersion schools, discussing their benefits, and explaining necessary components for success. (SM)

  12. Sub-100-nm trackwidth development by e-beam lithography for advanced magnetic recording heads

    NASA Astrophysics Data System (ADS)

    Chang, Jei-Wei; Chen, Chao-Peng

    2006-03-01

    Although semiconductor industry ramps the products with 90 nm much quicker than anticipated [1], magnetic recording head manufacturers still have difficulties in producing sub-100 nm read/write trackwidth. Patterning for high-aspectratio writer requires much higher depth of focus (DOF) than most advanced optical lithography, including immersion technique developed recently [2]. Self-aligning reader with its stabilized bias requires a bi-layer lift-off structure where the underlayer is narrower than the top image layer. As the reader's trackwidth is below 100nm, the underlayer becomes very difficult to control. Among available approaches, e-beam lithography remains the most promising one to overcome the challenge of progressive miniaturization. In this communication, the authors discussed several approaches using ebeam lithography to achieve sub-100 nm read/write trackwidth. Our studies indicated the suspended resist bridge design can not only widen the process window for lift-off process but also makes 65 nm trackwidth feasible to manufacture. Necked dog-bone structure seems to be the best design in this application due to less proximity effects from adjacent structures and minimum blockages for ion beam etching. The trackwidth smaller than 65 nm can be fabricated via the combination of e-beam lithography with auxiliary slimming and/or trimming. However, deposit overspray through undercut becomes dominated in such a small dimension. To minimize the overspray, the effects of underlayer thickness need to be further studied.

  13. Mask lithography for display manufacturing

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Ekberg, P.

    2010-05-01

    The last ten years have seen flat displays conquer our briefcases, desktops, and living rooms. There has been an enormous development in production technology, not least in lithography and photomasks. Current masks for large displays are more than 2 m2 and make 4-6 1X prints on glass substrates that are 9 m2. One of the most challenging aspects of photomasks for displays is the so called mura, stripes or blemishes which cause visible defects in the finished display. For the future new and even tighter maskwriter specifications are driven by faster transistors and more complex pixel layouts made necessary by the market's wish for still better image quality, multi-touch panels, 3D TVs, and the next wave of e-book readers. Large OLED screens will pose new challenges. Many new types of displays will be lowcost and use simple lithography, but anything which can show video and high quality photographic images needs a transistor backplane and sophisticated masks for its production.

  14. Immersive Learning Technologies

    DTIC Science & Technology

    2009-08-20

    Team  Games  James Xu  Virtual Worlds  Keysha Gamor  Mobile  Judy Brown  Web 2.0  Mark Friedman 3 … and It’s Not Just Games  “The smartest... Web 2.0 , Twitter 13 Questions or Comments? Peter Smith Team Lead, Immersive Learning Technologies peter.smith.ctr@adlnet.gov +1.407.384.5572

  15. Ancient Complexity, Opisthokont Plasticity, and Discovery of the 11th Subfamily of Arf GAP Proteins

    PubMed Central

    Schlacht, Alexander; Mowbrey, Kevin; Elias, Marek; Kahn, Richard A.; Dacks, Joel B.

    2013-01-01

    The organelle paralogy hypothesis is one model for the acquisition of non-endosymbiotic organelles, generated from molecular evolutionary analyses of proteins encoding specificity in the membrane traffic system. GTPase Activating Proteins (GAPs) for the ADP-ribosylation factor (Arfs) GTPases are additional regulators of the kinetics and fidelity of membrane traffic. Here we describe molecular evolutionary analyses of Arf GAP protein family. Of the ten subfamilies previously defined in humans, we find that five were likely present in the Last Eukaryotic Common Ancestor (LECA). Of the three more recently derived subfamilies, one was likely present in the ancestor of opisthokonts (animals and fungi) and apusomonads (flagellates classified as the sister lineage to opisthokonts), while two arose in the holozoan lineage. We also propose to have identified a novel ancient subfamily (ArfGAPC2), present in diverse eukaryotes but which is lost frequently, including in the opisthokonts. Surprisingly few ancient domains accompanying the ArfGAP domain were identified, in marked contrast to the extensively decorated human Arf GAPs. Phylogenetic analyses of the subfamilies reveal patterns of single and multiple gene duplications specific to the Holozoa, to some degree mirroring evolution of Arf GAP targets, the Arfs. Conservation, and lack thereof, of various residues in the ArfGAP structure provide contextualization of previously identified functional amino acids and their application to Arf GAP biology in general. Overall, our results yield insights into current Arf GAP biology, reveal complexity in the ancient eukaryotic ancestor, and integrate the Arf GAP family into a proposed mechanism for the evolution of non-endosymbiotic organelles. PMID:23433073

  16. Lithography options for the 32nm half pitch node and their implications on resist and material technology

    NASA Astrophysics Data System (ADS)

    Gronheid, Roel; Hendrickx, Eric; Wiaux, Vincent; Maenhoudt, Mireille; Goethals, Mieke; Vandenberghe, Geert; Ronse, Kurt

    2008-03-01

    There still remain three major technological lithography options for high volume manufacturing at the 32nm half pitch node: 193nm immersion lithography with high index materials, enabling NA>1.6 193nm double patterning and EUV lithography. In this paper the pros and cons of these three options will be discussed. Particular interest will be paid to the consequences of the final choice on the resist technology. High index 193nm immersion lithography also requires high index resist materials, which are under development but still far removed from the target refractive index and absorbance specifications not to mention lithographical performance. For double patterning the pitch may be relaxed, but the resists still need to be able to print very narrow lines and/or trenches. Moreover, it would be preferred for the resists to support pattern or image freezing techniques in order to step away from the litho-etch-litho-etch approach and make double patterning more cost effective. For EUV the resist materials need to meet very aggressive sensitivity specifications. In itself this is possible, but it is difficult to simultaneously maintain performance in terms of resolution and line width roughness. A new parameter (K LUP) for assessing resist performance in terms of these three performance criteria will be introduced.

  17. EUV lithography performance for manufacturing: status and outlook

    NASA Astrophysics Data System (ADS)

    Pirati, Alberto; Peeters, Rudy; Smith, Daniel; Lok, Sjoerd; van Noordenburg, Martijn; van Es, Roderik; Verhoeven, Eric; Meijer, Henk; Minnaert, Arthur; van der Horst, Jan-Willem; Meiling, Hans; Mallmann, Joerg; Wagner, Christian; Stoeldraijer, Judon; Fisser, Geert; Finders, Jo; Zoldesi, Carmen; Stamm, Uwe; Boom, Herman; Brandt, David; Brown, Daniel; Fomenkov, Igor; Purvis, Michael

    2016-03-01

    NXE:3300B scanners have been operational at customer sites since almost two years, and the NXE:3350B, the 4th generation EUV system, has started shipping at the end of 2015. All these exposure tools operate using MOPA pre-pulse source technology, which enabled significant productivity scaling, demonstrated at customers and at ASML. Having achieved the required throughput to support device development, the main priority of the ASML EUV program has shifted towards improving stability and availability. Continuous progresses in defectivity reduction and in the realization of a reticle pellicle are taking place at increased speed. Today's overlay and imaging results are in line with the requirements of 7nm logic devices; Matched Machine overlay to ArF immersion below 2.5 nm and full wafer CDU performance of less than 1.0nm are regularly achieved. The realization of an intensity loss-less illuminator and improvements in resist formulation are significant progress towards enabling the use of EUV technology for 5nm logic devices at full productivity. This paper will present an overview of the status of the ASML EUV program and product roadmap by reviewing the current performance and on-going developments in productivity, imaging, overlay and mask defectivity reduction.

  18. Performance overview and outlook of EUV lithography systems

    NASA Astrophysics Data System (ADS)

    Pirati, Alberto; Peeters, Rudy; Smith, Daniel; Lok, Sjoerd; Minnaert, Arthur; van Noordenburg, Martijn; Mallmann, Jörg; Harned, Noreen; Stoeldraijer, Judon; Wagner, Christian; Zoldesi, Carmen; van Setten, Eelco; Finders, Jo; de Peuter, Koen; de Ruijter, Chris; Popadic, Milos; Huang, Roger; Lin, Martin; Chuang, Frank; van Es, Roderik; Beckers, Marcel; Brandt, David; Farrar, Nigel; Schafgans, Alex; Brown, Daniel; Boom, Herman; Meiling, Hans; Kool, Ron

    2015-03-01

    Multiple NXE:3300 are operational at customer sites. These systems, equipped with a Numerical Aperture (NA) of 0.33, are being used by semiconductor manufacturers to support device development. Full Wafer Critical Dimension Uniformity (CDU) of 1.0 nm for 16nm dense lines and 1.1 nm for 20nm isolated space and stable matched overlay performance with ArF immersion scanner of less than 4nm provide the required lithographic performance for these device development activities. Steady progresses in source power have been achieved in the last 12 months, with 100Watts (W) EUV power capability demonstrated on multiple machines. Power levels up to 90W have been achieved on a customer machine, while 110W capability has been demonstrated in the ASML factory. Most NXE:3300 installed at customers have demonstrated the capability to expose 500 wafers per day, and one field system upgraded to the 80W configuration has proven capable of exposing 1,000 wafers per day. Scanner defectivity keeps being reduced by a 10x factor each year, while the first exposures obtained with full size EUV pellicles show no appreciable difference in CDU when compared to exposures done without pellicle. The 4th generation EUV system, the NXE: 3350, is being qualified in the ASML factory.

  19. Simulation of acute reference dose (ARfD) settings for pesticides in Japan.

    PubMed

    Yoshida, Midori; Suzuki, Daisetsu; Matsumoto, Kiyoshi; Shirota, Mariko; Inoue, Kaoru; Takahashi, Miwa; Morita, Takeshi; Ono, Atsushi

    2013-01-01

    In order to develop guidelines for setting acute reference doses (ARfDs) for pesticides in Japan, we conducted simulations of ARfD settings based on evaluation reports for 201 pesticides assessed by the Food Safety Commission (FSC) in Japan over the last 8 years. Our conceptual principles were based on the concepts written by Solecki et al. (2005) and were adapted for toxicological data required in Japan. Through this process, we were able to set the ARfDs for over 90% of the 201 pesticides tested. The studies that provided the rationale for ARfD setting were primarily reproductive and developmental toxicity studies, acute neurotoxicity studies, and pharmacology studies. For approximately 30% of the pesticides simulated in the present study, it was not necessary to establish ARfDs. Some of the simulated ARfDs resulting from their endpoints may be conservative estimates, because the evaluation reports were written for acceptable daily intake settings. Thus, it was sometimes difficult to distinguish acute toxic alerts from repeated toxicities. We were unable to set an ARfD for 14 pesticides because of insufficient data on acute toxicities. This could be improved by more complete recordkeeping. Furthermore, we categorized the 201 pesticides by mechanism of action or chemical structure. Our simulation indicates that the conceptual framework presented here can be used as a basis for the development of guidelines on ARfD settings for pesticides in Japan.

  20. 20 CFR 228.16 - Adjustments in the age reduction factor (ARF).

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 20 Employees' Benefits 1 2011-04-01 2011-04-01 false Adjustments in the age reduction factor (ARF... RETIREMENT ACT COMPUTATION OF SURVIVOR ANNUITIES The Tier I Annuity Component § 228.16 Adjustments in the age reduction factor (ARF). Upon the attainment of retirement age, the previously-computed age reduction...

  1. 20 CFR 228.16 - Adjustments in the age reduction factor (ARF).

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 20 Employees' Benefits 1 2013-04-01 2012-04-01 true Adjustments in the age reduction factor (ARF... RETIREMENT ACT COMPUTATION OF SURVIVOR ANNUITIES The Tier I Annuity Component § 228.16 Adjustments in the age reduction factor (ARF). Upon the attainment of retirement age, the previously-computed age reduction...

  2. 20 CFR 228.16 - Adjustments in the age reduction factor (ARF).

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 20 Employees' Benefits 1 2014-04-01 2012-04-01 true Adjustments in the age reduction factor (ARF... RETIREMENT ACT COMPUTATION OF SURVIVOR ANNUITIES The Tier I Annuity Component § 228.16 Adjustments in the age reduction factor (ARF). Upon the attainment of retirement age, the previously-computed age reduction...

  3. 20 CFR 228.16 - Adjustments in the age reduction factor (ARF).

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 20 Employees' Benefits 1 2012-04-01 2012-04-01 false Adjustments in the age reduction factor (ARF... RETIREMENT ACT COMPUTATION OF SURVIVOR ANNUITIES The Tier I Annuity Component § 228.16 Adjustments in the age reduction factor (ARF). Upon the attainment of retirement age, the previously-computed age reduction...

  4. Rab35, acting through ACAP2 switching off Arf6, negatively regulates oligodendrocyte differentiation and myelination

    PubMed Central

    Miyamoto, Yuki; Yamamori, Natsuki; Torii, Tomohiro; Tanoue, Akito; Yamauchi, Junji

    2014-01-01

    Oligodendrocyte precursor cells differentiate to produce myelin sheaths that insulate axons to ensure fast propagation of action potentials. Many aspects of differentiation are regulated by multiple extracellular signals. However, their intracellular signalings remain elusive. We show that Rab35 and its effector, ACAP2, a GTPase-activating protein that switches off Arf6 activity, negatively regulate oligodendrocyte morphological differentiation. Knockdown of Rab35 or ACAP2 with their respective small interfering RNAs promotes differentiation. As differentiation initiates, the activities of Rab35 and ACAP2 are down-regulated. The activity of Arf6, in contrast, is up-regulated. Arf6 knockdown inhibits differentiation, indicating that Rab35 and ACAP2 negatively regulate differentiation by down-regulating Arf6. Importantly, as differentiation proceeds, the activity of cytohesin-2, a guanine nucleotide exchange factor that switches on Arf6 activity, is up-regulated. Pharmacological inhibition of cytohesin-2 inhibits differentiation, suggesting that cytohesin-2 promotes differentiation by activating Arf6. Furthermore, using oligodendrocyte-neuronal cocultures, we find that knockdown of Rab35 or ACAP2 promotes myelination, whereas inhibition of cytohesin-2 or knockdown of Arf6 inhibits myelination. Thus Rab35/ACAP2 and cytohesin-2 antagonistically control oligodendrocyte differentiation and myelination through Arf6 regulation, presenting a unique small GTPase on/off switching mechanism. PMID:24600047

  5. Structural basis for recruitment and activation of the AP-1 clathrin adaptor complex by Arf1.

    PubMed

    Ren, Xuefeng; Farías, Ginny G; Canagarajah, Bertram J; Bonifacino, Juan S; Hurley, James H

    2013-02-14

    AP-1 is a clathrin adaptor complex that sorts cargo between the trans-Golgi network and endosomes. AP-1 recruitment to these compartments requires Arf1-GTP. The crystal structure of the tetrameric core of AP-1 in complex with Arf1-GTP, together with biochemical analyses, shows that Arf1 activates cargo binding by unlocking AP-1. Unlocking is driven by two molecules of Arf1 that bridge two copies of AP-1 at two interaction sites. The GTP-dependent switch I and II regions of Arf1 bind to the N terminus of the β1 subunit of one AP-1 complex, while the back side of Arf1 binds to the central part of the γ subunit trunk of a second AP-1 complex. A third Arf1 interaction site near the N terminus of the γ subunit is important for recruitment, but not activation. These observations lead to a model for the recruitment and activation of AP-1 by Arf1.

  6. PICKLE is required for SOLITARY-ROOT/IAA14-mediated repression of ARF7 and ARF19 activity during Arabidopsis lateral root initiation.

    PubMed

    Fukaki, Hidehiro; Taniguchi, Naohide; Tasaka, Masao

    2006-11-01

    Lateral root (LR) formation in Arabidopsis is regulated by auxin signaling through AUXIN RESPONSE FACTOR transcriptional activators, ARF7 and ARF19, and auxin/indole-3-acetic acid (Aux/IAA) repressors, including SOLITARY-ROOT (SLR)/IAA14. Previous studies have strongly suggested that, in the gain-of-function slr-1 mutant, stabilized mutant IAA14 (mIAA14) protein inactivates ARF7/19 functions, thereby completely blocking LR initiation. However, the mechanism of inactivation is still unknown. We have now identified an extragenic suppressor mutation of slr-1, suppressor of slr2 (ssl2), which specifically restores LR formation in the slr-1 mutant, and have found that SSL2 negatively regulates the auxin-induced pericycle cell divisions required for LR initiation. The SSL2 gene encodes PICKLE (PKL), a homologue of the animal chromatin-remodeling factor CHD3/Mi-2, and LR formation restored in pkl/ssl2 slr-1 mutants depends on ARF7/19 functions, suggesting that ARF7/19-dependent transcription takes place if there is a pkl/ssl2 mutation in slr-1. In animals, Mi-2 represses transcription as a subunit of the NuRD/Mi-2 complex containing histone deacetylases (HDACs). Inhibition of HDAC activity by trichostatin A also results in LR formation in the slr-1 mutant, but not in the slr-1 arf7 arf19 triple mutant, suggesting that normal HDAC activity is required for the mIAA14-mediated inactivation of ARF7/19 functions in LR initiation. Taken together, our data suggest that PKL/SSL2-mediated chromatin remodeling negatively regulates auxin-mediated LR formation in Arabidopsis.

  7. Particle Lithography Enables Fabrication of Multicomponent Nanostructures

    PubMed Central

    Lin, Wei-feng; Swartz, Logan A.; Li, Jie-Ren; Liu, Yang; Liu, Gang-yu

    2014-01-01

    Multicomponent nanostructures with individual geometries have attracted much attention because of their potential to carry out multiple functions synergistically. The current work reports a simple method using particle lithography to fabricate multicomponent nanostructures of metals, proteins, and organosiloxane molecules, each with its own geometry. Particle lithography is well-known for its capability to produce arrays of triangular-shaped nanostructures with novel optical properties. This paper extends the capability of particle lithography by combining a particle template in conjunction with surface chemistry to produce multicomponent nanostructures. The advantages and limitations of this approach will also be addressed. PMID:24707328

  8. Multi-shaped beam proof of lithography

    NASA Astrophysics Data System (ADS)

    Slodowski, Matthias; Doering, Hans-Joachim; Dorl, Wolfgang; Stolberg, Ines A.

    2010-03-01

    In this paper a full package high throughput multi electron-beam approach, called Multi Shaped Beam (MSB), for applications in mask making as well as direct write will be presented including complex proof-of-lithography results. The basic concept enables a significant exposure shot count reduction for advanced patterns compared to standard Variable Shaped Beam (VSB) systems and allows full pattern flexibility by concurrently using MSB, VSB and Cell Projection (CP). Proof of lithography results will be presented, which have been performed using a fully operational electron-beam lithography system including data path and substrate scanning by x/y-stage movement.

  9. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  10. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, Glenn D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  11. Defect tolerant transmission lithography mask

    DOEpatents

    Vernon, Stephen P.

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  12. Genome-wide analysis of Aux/IAA and ARF gene families in Populus trichocarpa

    SciTech Connect

    Kalluri, Udaya C; DiFazio, Stephen P; Brunner, A.; Tuskan, Gerald A

    2007-01-01

    Auxin/Indole-3-Acetic Acid (Aux/IAA) and Auxin Response Factor (ARF) transcription factors are key regulators of auxin responses in plants. A total of 35 Aux/IAA and 39 ARF genes were identified in the Populus genome. Comparative phylogenetic analysis revealed that the subgroups PoptrARF2, 6, 9 and 16 and PoptrIAA3, 16, 27 and 29 have differentially expanded in Populus relative to Arabidopsis. Activator ARFs were found to be two fold-overrepresented in the Populus genome. PoptrIAA and PoptrARF gene families appear to have expanded due to high segmental and low tandem duplication events. Furthermore, expression studies showed that genes in the expanded PoptrIAA3 subgroup display differential expression. The gene-family analysis reported here will be useful in conducting future functional genomics studies to understand how the molecular roles of these large gene families translate into a diversity of biologically meaningful auxin effects.

  13. Regulators and Effectors of Arf GTPases in Neutrophils.

    PubMed

    Gamara, Jouda; Chouinard, François; Davis, Lynn; Aoudjit, Fawzi; Bourgoin, Sylvain G

    2015-01-01

    Polymorphonuclear neutrophils (PMNs) are key innate immune cells that represent the first line of defence against infection. They are the first leukocytes to migrate from the blood to injured or infected sites. This process involves molecular mechanisms that coordinate cell polarization, delivery of receptors, and activation of integrins at the leading edge of migrating PMNs. These phagocytes actively engulf microorganisms or form neutrophil extracellular traps (NETs) to trap and kill pathogens with bactericidal compounds. Association of the NADPH oxidase complex at the phagosomal membrane for production of reactive oxygen species (ROS) and delivery of proteolytic enzymes into the phagosome initiate pathogen killing and removal. G protein-dependent signalling pathways tightly control PMN functions. In this review, we will focus on the small monomeric GTPases of the Arf family and their guanine exchange factors (GEFs) and GTPase activating proteins (GAPs) as components of signalling cascades regulating PMN responses. GEFs and GAPs are multidomain proteins that control cellular events in time and space through interaction with other proteins and lipids inside the cells. The number of Arf GAPs identified in PMNs is expanding, and dissecting their functions will provide important insights into the role of these proteins in PMN physiology.

  14. Regulators and Effectors of Arf GTPases in Neutrophils

    PubMed Central

    Gamara, Jouda; Chouinard, François; Davis, Lynn; Aoudjit, Fawzi; Bourgoin, Sylvain G.

    2015-01-01

    Polymorphonuclear neutrophils (PMNs) are key innate immune cells that represent the first line of defence against infection. They are the first leukocytes to migrate from the blood to injured or infected sites. This process involves molecular mechanisms that coordinate cell polarization, delivery of receptors, and activation of integrins at the leading edge of migrating PMNs. These phagocytes actively engulf microorganisms or form neutrophil extracellular traps (NETs) to trap and kill pathogens with bactericidal compounds. Association of the NADPH oxidase complex at the phagosomal membrane for production of reactive oxygen species (ROS) and delivery of proteolytic enzymes into the phagosome initiate pathogen killing and removal. G protein-dependent signalling pathways tightly control PMN functions. In this review, we will focus on the small monomeric GTPases of the Arf family and their guanine exchange factors (GEFs) and GTPase activating proteins (GAPs) as components of signalling cascades regulating PMN responses. GEFs and GAPs are multidomain proteins that control cellular events in time and space through interaction with other proteins and lipids inside the cells. The number of Arf GAPs identified in PMNs is expanding, and dissecting their functions will provide important insights into the role of these proteins in PMN physiology. PMID:26609537

  15. ETV1 positively regulates transcription of tumor suppressor ARF

    PubMed Central

    Zynda, Evan; Jackson, Mark W; Bhattacharya, Partho; Kandel, Eugene S

    2013-01-01

    ETV1 (ETS variant 1) is a transcription factor from the ETS family and an oncogene in several types of human malignancies. Paradoxically, a predicted inactivating mutation in ETV1 was previously found in a clone of HT1080 cells with reduced activity of p53. We report that elevated expression of ETV1 makes p53-null tumor cells hypersensitive to restoration of said tumor suppressor. Furthermore, elevated levels of either wild-type ETV1 or its truncated derivative, dETV1, which mimics the product of an oncogenic rearrangement in certain tumors, results in increased expression of mRNA for p14ARF, a known activator of p53. Accordingly, expression of a luciferase reporter, which is driven by a putative ARF promoter, was elevated by concomitant expression of either ETV1 or dETV1. Our observations point to yet another example of a tumor suppressor gene being activated by a potentially oncogenic signal. A better understanding of the mechanisms that allow a cell to bypass such safeguards is needed in order to predict and prevent the development of an oncogene-tolerant state during cancer evolution. PMID:24157551

  16. Mask requirements for advanced lithography

    NASA Astrophysics Data System (ADS)

    Trybula, Walter J.; Engelstad, Roxann L.

    1998-06-01

    Within the n ext 10 years, sub-100 nm features will be required for state-of-the-industry devices. The tolerances for errors at 100 nm or less are substantially smaller than can be achieved today. A critical element of the error budget is the mask. For the 100 nm generation, the 4x mask image placement requirement is 20 nm with CD requirements as low as 9 nm. The challenge would be significant if the only improvement were to develop superior optical masks. There are multiple advanced technologies that are vying to be the successor to optical lithography. Each of these has a unique mask requirement. The leading contenders for the next generation are 1x x-ray, projection e-beam, ion beam, EUV and cell projection e-beam. The x-ray design is a proximity system that employs a 1x membrane mask. Projection e-beam uses a membrane mask with stabilizing struts. Ion beam lithography employs a stencil membrane mask with a carbon coating. EUV employs a 13 nm radiation source that requires a reflective mask. Cell projection e-beam has 25x or greater image masks that are stitched on the wafer. All the technologies indicated above. Once a total error budget for the mask is known, it is necessary to divide the total into the constituent parts. The major sources of distortion can be categorized into eight areas: mask blank processing, e- beam writing, pattern transfer, pellicle effects, mounting, thermal loadings, dynamic effects during exposure and radiation damage. The distortions introduced by each of these depend upon the type of mask; so, individual mask calculations must be made. The purpose of this paper is to review the modeling requirements of each of the categories and to highlight some results from each of the mask configurations.

  17. Targeting of C-Terminal Binding Protein (CtBP) by ARF Results in p53-Independent Apoptosis

    PubMed Central

    Paliwal, Seema; Pande, Sandhya; Kovi, Ramesh C.; Sharpless, Norman E.; Bardeesy, Nabeel; Grossman, Steven R.

    2006-01-01

    ARF encodes a potent tumor suppressor that antagonizes MDM2, a negative regulator of p53. ARF also suppresses the proliferation of cells lacking p53, and loss of ARF in p53-null mice, compared with ARF or p53 singly null mice, results in a broadened tumor spectrum and decreased tumor latency. To investigate the mechanism of p53-independent tumor suppression by ARF, potential interacting proteins were identified by yeast two-hybrid screen. The antiapoptotic transcriptional corepressor C-terminal binding protein 2 (CtBP2) was identified, and ARF interactions with both CtBP1 and CtBP2 were confirmed in vitro and in vivo. Interaction with ARF resulted in proteasome-dependent CtBP degradation. Both ARF-induced CtBP degradation and CtBP small interfering RNA led to p53-independent apoptosis in colon cancer cells. ARF induction of apoptosis was dependent on its ability to interact with CtBP, and reversal of ARF-induced CtBP depletion by CtBP overexpression abrogated ARF-induced apoptosis. CtBP proteins represent putative targets for p53-independent tumor suppression by ARF. PMID:16508011

  18. Arf6 coordinates actin assembly through the WAVE complex, a mechanism usurped by Salmonella to invade host cells

    PubMed Central

    Humphreys, Daniel; Davidson, Anthony C.; Hume, Peter J.; Makin, Laura E.; Koronakis, Vassilis

    2013-01-01

    ADP ribosylation factor (Arf) 6 anchors to the plasma membrane, where it coordinates membrane trafficking and cytoskeleton remodelling, but how it assembles actin filaments is unknown. By reconstituting membrane-associated actin assembly mediated by the WASP family veroprolin homolog (WAVE) regulatory complex (WRC), we recapitulated an Arf6-driven actin polymerization pathway. We show that Arf6 is divergent from other Arf members, as it was incapable of directly recruiting WRC. We demonstrate that Arf6 triggers actin assembly at the membrane indirectly by recruiting the Arf guanine nucleotide exchange factor (GEF) ARNO that activates Arf1 to enable WRC-dependent actin assembly. The pathogen Salmonella usurped Arf6 for host cell invasion by recruiting its canonical GEFs EFA6 and BRAG2. Arf6 and its GEFs facilitated membrane ruffling and pathogen invasion via ARNO, and triggered actin assembly by generating an Arf1–WRC signaling hub at the membrane in vitro and in cells. This study reconstitutes Arf6-dependent actin assembly to reveal a mechanism by which related Arf GTPases orchestrate distinct steps in the WRC cytoskeleton remodelling pathway. PMID:24085844

  19. Stage Cylindrical Immersive Display

    NASA Technical Reports Server (NTRS)

    Abramyan, Lucy; Norris, Jeffrey S.; Powell, Mark W.; Mittman, David S.; Shams, Khawaja S.

    2011-01-01

    Panoramic images with a wide field of view intend to provide a better understanding of an environment by placing objects of the environment on one seamless image. However, understanding the sizes and relative positions of the objects in a panorama is not intuitive and prone to errors because the field of view is unnatural to human perception. Scientists are often faced with the difficult task of interpreting the sizes and relative positions of objects in an environment when viewing an image of the environment on computer monitors or prints. A panorama can display an object that appears to be to the right of the viewer when it is, in fact, behind the viewer. This misinterpretation can be very costly, especially when the environment is remote and/or only accessible by unmanned vehicles. A 270 cylindrical display has been developed that surrounds the viewer with carefully calibrated panoramic imagery that correctly engages their natural kinesthetic senses and provides a more accurate awareness of the environment. The cylindrical immersive display offers a more natural window to the environment than a standard cubic CAVE (Cave Automatic Virtual Environment), and the geometry allows multiple collocated users to simultaneously view data and share important decision-making tasks. A CAVE is an immersive virtual reality environment that allows one or more users to absorb themselves in a virtual environment. A common CAVE setup is a room-sized cube where the cube sides act as projection planes. By nature, all cubic CAVEs face a problem with edge matching at edges and corners of the display. Modern immersive displays have found ways to minimize seams by creating very tight edges, and rely on the user to ignore the seam. One significant deficiency of flat-walled CAVEs is that the sense of orientation and perspective within the scene is broken across adjacent walls. On any single wall, parallel lines properly converge at their vanishing point as they should, and the sense of

  20. Enabling immersive simulation.

    SciTech Connect

    McCoy, Josh; Mateas, Michael; Hart, Derek H.; Whetzel, Jonathan; Basilico, Justin Derrick; Glickman, Matthew R.; Abbott, Robert G.

    2009-02-01

    The object of the 'Enabling Immersive Simulation for Complex Systems Analysis and Training' LDRD has been to research, design, and engineer a capability to develop simulations which (1) provide a rich, immersive interface for participation by real humans (exploiting existing high-performance game-engine technology wherever possible), and (2) can leverage Sandia's substantial investment in high-fidelity physical and cognitive models implemented in the Umbra simulation framework. We report here on these efforts. First, we describe the integration of Sandia's Umbra modular simulation framework with the open-source Delta3D game engine. Next, we report on Umbra's integration with Sandia's Cognitive Foundry, specifically to provide for learning behaviors for 'virtual teammates' directly from observed human behavior. Finally, we describe the integration of Delta3D with the ABL behavior engine, and report on research into establishing the theoretical framework that will be required to make use of tools like ABL to scale up to increasingly rich and realistic virtual characters.

  1. Secrets of subwavelength imaging and lithography

    NASA Astrophysics Data System (ADS)

    Hemmer, Philip R.

    2011-08-01

    To understand the limits and tradeoffs of nearly all existing subwavelength imaging techniques it sufficient to understand magnetic resonance imaging (MRI) and its generalizations. In many cases, subwavelength optical lithography can be viewed as the inverse problem to imaging and so the same principles apply. A simple review of MRI is given which shows how the most popular subwavelength imaging and lithography techniques naturally arise as special cases.

  2. The human ARF tumor suppressor senses blastema activity and suppresses epimorphic tissue regeneration

    PubMed Central

    Hesse, Robert G; Kouklis, Gayle K; Ahituv, Nadav; Pomerantz, Jason H

    2015-01-01

    The control of proliferation and differentiation by tumor suppressor genes suggests that evolution of divergent tumor suppressor repertoires could influence species’ regenerative capacity. To directly test that premise, we humanized the zebrafish p53 pathway by introducing regulatory and coding sequences of the human tumor suppressor ARF into the zebrafish genome. ARF was dormant during development, in uninjured adult fins, and during wound healing, but was highly expressed in the blastema during epimorphic fin regeneration after amputation. Regenerative, but not developmental signals resulted in binding of zebrafish E2f to the human ARF promoter and activated conserved ARF-dependent Tp53 functions. The context-dependent activation of ARF did not affect growth and development but inhibited regeneration, an unexpected distinct tumor suppressor response to regenerative versus developmental environments. The antagonistic pleiotropic characteristics of ARF as both tumor and regeneration suppressor imply that inducing epimorphic regeneration clinically would require modulation of ARF –p53 axis activation. DOI: http://dx.doi.org/10.7554/eLife.07702.001 PMID:26575287

  3. Molecular cloning and expression analyses of a novel swine gene--ARF4.

    PubMed

    Liu, G Y; Xiong, Y Z

    2009-03-01

    The mRNA differential display technique was performed to investigate the differences of gene expression in the longissimus muscle tissues from Meishan and Large White pigs. One novel gene that was differentially expressed was identified through semi-quantitative RT-PCR and the cDNA complete sequence was then obtained using the rapid amplification of cDNA ends (RACE) method. The nucleotide sequence of the gene is not homologous to any of the known porcine genes. The sequence prediction analysis revealed that the open reading frame of this gene encodes a protein of 180 amino acids that contains the putative conserved domain of ADP-ribosylation factor (ARF) which has high homology with the ADP-ribosylation factor 4 (ARF4) of six species-bovine (98%), human and orangutan (96%), African clawed frog (96%), mouse and rat (98%)-so that it can be defined as swine ADP-ribosylation factor 4 (ARF4). This novel porcine gene was finally assigned to GeneID:595108. The phylogenetic tree analysis revealed that the swine ARF4 has a closer genetic relationship with the rat and mouse ARF4 than with those of human and African clawed frog. The tissue expression analysis indicated that the swine ARF4 gene is over expressed in muscle, fat, heart, spleen, liver, and ovary and moderately expressed in lung and kidney but weakly expressed in small intestine. Our experiment is the first to establish the primary foundation for further research on the swine ARF4 gene.

  4. Molecular analysis of ARF1 expression profiles during development of physic nut (Jatropha curcas L.).

    PubMed

    Qin, Xiaobo; Lin, Fanrong; Lii, Yifan; Gou, Chunbao; Chen, Fang

    2011-03-01

    A cDNA clone designated arf1 was isolated from a physic nut (Jatropha curcas L.) endosperm cDNA library which encodes a small GTP-binding protein and has significant homology to ADP-ribosylation factors (ARF) in plants, animals and microbes. The cDNA contains an open reading frame that encodes a polypeptide of 181 amino acids with a calculated molecular mass of 20.7 kDa. The deduced amino acid sequence showed high homology to known ARFs from other organisms. The products of the arf1 obtained by overexpression in E. coli revealed the specific binding activity toward GTP. The expression of arf1 was observed in flowers, roots, stems and leaves as analyzed by RT-PCR, and its transcriptional level was highest in flowers. In particular, the accumulation of arf1 transcripts was different under various environmental stresses in seedlings. The results suggest that arf1 plays distinct physiological roles in Jatropha curcas cells.

  5. Elimination of p19ARF-expressing cells enhances pulmonary function in mice

    PubMed Central

    Hashimoto, Michihiro; Asai, Azusa; Kawagishi, Hiroyuki; Mikawa, Ryuta; Iwashita, Yuji; Kanayama, Kazuki; Sugimoto, Kazushi; Sato, Tadashi; Maruyama, Mitsuo

    2016-01-01

    Senescent cells accumulate in many tissues as animals age and are considered to underlie several aging-associated pathologies. The tumor suppressors p19ARF and p16INK4a, both of which are encoded in the CDKN2A locus, play critical roles in inducing and maintaining permanent cell cycle arrest during cellular senescence. Although the elimination of p16INK4a-expressing cells extends the life span of the mouse, it is unclear whether tissue function is restored by the elimination of senescent cells in aged animals and whether and how p19ARF contributes to tissue aging. The aging-associated decline in lung function is characterized by an increase in compliance as well as pathogenic susceptibility to pulmonary diseases. We herein demonstrated that pulmonary function in 12-month-old mice was reversibly restored by the elimination of p19ARF-expressing cells. The ablation of p19ARF-expressing cells using a toxin receptor-mediated cell knockout system ameliorated aging-associated lung hypofunction. Furthermore, the aging-associated gene expression profile was reversed after the elimination of p19ARF. Our results indicate that the aging-associated decline in lung function was, at least partly, attributed to p19ARF and was recovered by eliminating p19ARF-expressing cells. PMID:27699227

  6. Genome-wide identification, isolation and expression analysis of auxin response factor (ARF) gene family in sweet orange (Citrus sinensis).

    PubMed

    Li, Si-Bei; OuYang, Wei-Zhi; Hou, Xiao-Jin; Xie, Liang-Liang; Hu, Chun-Gen; Zhang, Jin-Zhi

    2015-01-01

    Auxin response factors (ARFs) are an important family of proteins in auxin-mediated response, with key roles in various physiological and biochemical processes. To date, a genome-wide overview of the ARF gene family in citrus was not available. A systematic analysis of this gene family in citrus was begun by carrying out a genome-wide search for the homologs of ARFs. A total of 19 nonredundant ARF genes (CiARF) were found and validated from the sweet orange. A comprehensive overview of the CiARFs was undertaken, including the gene structures, phylogenetic analysis, chromosome locations, conserved motifs of proteins, and cis-elements in promoters of CiARF. Furthermore, expression profiling using real-time PCR revealed many CiARF genes, albeit with different patterns depending on types of tissues and/or developmental stages. Comprehensive expression analysis of these genes was also performed under two hormone treatments using real-time PCR. Indole-3-acetic acid (IAA) and N-1-napthylphthalamic acid (NPA) treatment experiments revealed differential up-regulation and down-regulation, respectively, of the 19 citrus ARF genes in the callus of sweet orange. Our comprehensive analysis of ARF genes further elucidates the roles of CiARF family members during citrus growth and development process.

  7. Broadcasting presence: immersive television

    NASA Astrophysics Data System (ADS)

    Harrison, David; Lodge, Nicholas

    2000-06-01

    Being present at a live event is undeniably the most exciting way to experience any entertainment. This is true whether we are talking about a musical concert, a theatrical performance, a cricket match, or even a firework display. The ability to direct your gaze where you wish, to hear sounds from all around you, to experience the immediacy and expectation of an unscripted happening, to feel the buzz of the crowd and to smell the grass or smoke, are all sensory cues which contribute to the powerful experience of being there. This paper examines the ways in which entertainment media have attempted to recreate experiences which encourage the viewer to suspend disbelief and become part of a remote or recorded event. We introduce the concept of immersive television and look at some of the research, spanning many disciplines of science and art, which the ITC is conducting to explore the potential of this new medium.

  8. Immersion echelle spectrograph

    DOEpatents

    Stevens, Charles G.; Thomas, Norman L.

    2000-01-01

    A small spectrograph containing no moving components and capable of providing high resolution spectra of the mid-infrared region from 2 microns to 4 microns in wavelength. The resolving power of the spectrograph exceeds 20,000 throughout this region and at an optical throughput of about 10.sup.-5 cm.sup.2 sr. The spectrograph incorporates a silicon immersion echelle grating operating in high spectral order combined with a first order transmission grating in a cross-dispersing configuration to provide a two-dimensional (2-D) spectral format that is focused onto a two-dimensional infrared detector array. The spectrometer incorporates a common collimating and condensing lens assembly in a near aberration-free axially symmetric design. The spectrometer has wide use potential in addition to general research, such as monitoring atmospheric constituents for air quality, climate change, global warming, as well as monitoring exhaust fumes for smog sources or exhaust plumes for evidence of illicit drug manufacture.

  9. Research development of thermal aberration in 193nm lithography exposure system

    NASA Astrophysics Data System (ADS)

    Wang, Yueqiang; Liu, Yong

    2014-08-01

    Lithographic exposure is the key process in the manufacture of the integrated circuit, and the performance of exposure system decides the level of microelectronic manufacture technology. Nowadays, the 193nm ArF immersion exposure tool is widely used by the IC manufacturer. With the uniformity of critical dimension (CDU) and overlay become tighter and the requirement for throughput become higher, the thermal aberration caused by lens material and structure absorbing the laser energy cannot be neglected. In this paper, we introduce the efforts and methods that researcher on thermal aberration and its control. Further, these methods were compared to show their own pros and cons. Finally we investigated the challenges of thermal aberration control for state of the art technologies.

  10. Extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Sweeney, Donald W.; Shafer, David; McGuire, James

    2001-01-01

    Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

  11. Array imaging system for lithography

    NASA Astrophysics Data System (ADS)

    Kirner, Raoul; Mueller, Kevin; Malaurie, Pauline; Vogler, Uwe; Noell, Wilfried; Scharf, Toralf; Voelkel, Reinhard

    2016-09-01

    We present an integrated array imaging system based on a stack of microlens arrays. The microlens arrays are manufactured by melting resist and reactive ion etching (RIE) technology on 8'' wafers (fused silica) and mounted by wafer-level packaging (WLP)1. The array imaging system is configured for 1X projection (magnification m = +1) of a mask pattern onto a planar wafer. The optical system is based on two symmetric telescopes, thus anti-symmetric wavefront aberrations like coma, distortion, lateral color are minimal. Spherical aberrations are reduced by using microlenses with aspherical lens profiles. In our system design approach, sub-images of individual imaging channels do not overlap to avoid interference. Image superposition is achieved by moving the array imaging system during the exposure time. A tandem Koehler integrator illumination system (MO Exposure Optics) is used for illumination. The angular spectrum of the illumination light underfills the pupils of the imaging channels to avoid crosstalk. We present and discuss results from simulation, mounting and testing of a first prototype of the investigated array imaging system for lithography.

  12. Lithography aware overlay metrology target design method

    NASA Astrophysics Data System (ADS)

    Lee, Myungjun; Smith, Mark D.; Lee, Joonseuk; Jung, Mirim; Lee, Honggoo; Kim, Youngsik; Han, Sangjun; Adel, Michael E.; Lee, Kangsan; Lee, Dohwa; Choi, Dongsub; Liu, Zephyr; Itzkovich, Tal; Levinski, Vladimir; Levy, Ady

    2016-03-01

    We present a metrology target design (MTD) framework based on co-optimizing lithography and metrology performance. The overlay metrology performance is strongly related to the target design and optimizing the target under different process variations in a high NA optical lithography tool and measurement conditions in a metrology tool becomes critical for sub-20nm nodes. The lithography performance can be quantified by device matching and printability metrics, while accuracy and precision metrics are used to quantify the metrology performance. Based on using these metrics, we demonstrate how the optimized target can improve target printability while maintaining the good metrology performance for rotated dipole illumination used for printing a sub-100nm diagonal feature in a memory active layer. The remaining challenges and the existing tradeoff between metrology and lithography performance are explored with the metrology target designer's perspective. The proposed target design framework is completely general and can be used to optimize targets for different lithography conditions. The results from our analysis are both physically sensible and in good agreement with experimental results.

  13. ARF1 and SAR1 GTPases in endomembrane trafficking in plants.

    PubMed

    Cevher-Keskin, Birsen

    2013-09-05

    Small GTPases largely control membrane traffic, which is essential for the survival of all eukaryotes. Among the small GTP-binding proteins, ARF1 (ADP-ribosylation factor 1) and SAR1 (Secretion-Associated RAS super family 1) are commonly conserved among all eukaryotes with respect to both their functional and sequential characteristics. The ARF1 and SAR1 GTP-binding proteins are involved in the formation and budding of vesicles throughout plant endomembrane systems. ARF1 has been shown to play a critical role in COPI (Coat Protein Complex I)-mediated retrograde trafficking in eukaryotic systems, whereas SAR1 GTPases are involved in intracellular COPII-mediated protein trafficking from the ER to the Golgi apparatus. This review offers a summary of vesicular trafficking with an emphasis on the ARF1 and SAR1 expression patterns at early growth stages and in the de-etiolation process.

  14. ARF6, PI3-kinase and host cell actin cytoskeleton in Toxoplasma gondii cell invasion

    SciTech Connect

    Vieira da Silva, Claudio; Alves da Silva, Erika; Costa Cruz, Mario; Chavrier, Philippe; Arruda Mortara, Renato

    2009-01-16

    Toxoplasma gondii infects a variety of different cell types in a range of different hosts. Host cell invasion by T. gondii occurs by active penetration of the host cell, a process previously described as independent of host actin polymerization. Also, the parasitophorous vacuole has been shown to resist fusion with endocytic and exocytic pathways of the host cell. ADP-ribosylation factor-6 (ARF6) belongs to the ARF family of small GTP-binding proteins. ARF6 regulates membrane trafficking and actin cytoskeleton rearrangements at the plasma membrane. Here, we have observed that ARF6 is recruited to the parasitophorous vacuole of tachyzoites of T. gondii RH strain and it also plays an important role in the parasite cell invasion with activation of PI3-kinase and recruitment of PIP{sub 2} and PIP{sub 3} to the parasitophorous vacuole of invading parasites. Moreover, it was verified that maintenance of host cell actin cytoskeleton integrity is important to parasite invasion.

  15. Functional association between Arf and RalA in active phospholipase D complex

    PubMed Central

    Luo, Jing-Qing; Liu, Xin; Frankel, Paul; Rotunda, Thuy; Ramos, Miguel; Flom, Judith; Jiang, Hong; Feig, Larry A.; Morris, Andrew J.; Kahn, Richard A.; Foster, David A.

    1998-01-01

    Activation of phospholipase D1 (PLD1) by Arf has been implicated in vesicle transport and membrane trafficking. PLD1 has also been shown to be associated with the small GTPase RalA, which functions downstream from Ras in a Ras–RalA GTPase cascade that facilitates intracellular signal transduction. Although PLD1 associates directly with RalA, RalA has no effect upon the activity of PLD1. However, PLD1 precipitated from cell lysates with immobilized glutathione S-transferase–RalA fusion protein is active. This suggests the presence of an additional activating factor in the active RalA–PLD1 complexes. Because Arf stimulates PLD1, we looked for the presence of Arf in the active RalA–PLD1 complexes isolated from v-Src- and v-Ras-transformed cell lysates. Low levels of Arf protein were detected in RalA–PLD1 complexes; however, if guanosine 5′-[γ-thio]triphosphate was added to activate Arf and stimulate translocation to the membrane, high levels of Arf were precipitated by RalA from cell lysates. Interestingly, deletion of 11 amino-terminal amino acids unique to Ral GTPases, which abolished the ability of RalA to precipitate PLD activity, prevented the association between RalA and Arf. Brefeldin A, which inhibits Arf GDP–GTP exchange, inhibited PLD activity in v-Src- and v-Ras-transformed cells but not in the nontransformed cells, suggesting that the association of Arf with RalA is required for the increased PLD activity induced by v-Src and v-Ras. These data implicate Arf in the transduction of intracellular signals activated by v-Src and mediated by the Ras–RalA GTPase cascade. Because both Arf and PLD1 stimulate vesicle formation in the Golgi, these data raise the possibility that vesicle formation and trafficking may play a role in the transduction of intracellular signals. PMID:9520417

  16. Immersion echelle spectrograph

    SciTech Connect

    Stevens, C.G.; Thomas, N.L.

    2000-06-20

    A small spectrograph is disclosed containing no moving components and capable of providing high resolution spectra of the mid-infrared region from 2 microns to 4 microns in wavelength. The resolving power of the spectrograph exceeds 20,000 throughout this region and at an optical throughput of about 10{sup {minus}5}cm{sup 2}sr. The spectrograph incorporates a silicon immersion echelle grating operating in high spectral order combined with a first order transmission grating in a cross-dispersing configuration to provide a two-dimensional (2-D) spectral format that is focused onto a two-dimensional infrared detector array. The spectrometer incorporates a common collimating and condensing lens assembly in a near aberration-free axially symmetric design. The spectrometer has wide use potential in addition to general research, such as monitoring atmospheric constituents for air quality, climate change, global warming, as well as monitoring exhaust fumes for smog sources or exhaust plumes for evidence of illicit drug manufacture.

  17. Thermal comfort following immersion.

    PubMed

    Guéritée, Julien; Redortier, Bernard; House, James R; Tipton, Michael J

    2015-02-01

    Unlike thermal comfort in air, little research has been undertaken exploring thermal comfort around water sports. We investigated the impact of swimming and cooling in air after swimming on thermal comfort. After 10 min of swimming-and-resting cycles in 28°C water, volunteers wearing two types of garments or in swim briefs, faced winds in 24°C air, at rest or when stepping. Thermal comfort was significantly higher during swimming than resting. Post-immersion, following maximum discomfort, in 45 of 65 tests thermal comfort improved although mean skin temperature was still cooling (0.26 [SD 0.19] °C·min(-1) - max was 0.89°C·min(-1)). When thermal comfort was re-established mean skin temperature was lower than at maximal discomfort in 39 of 54 tests (0.81 [SD 0.58] °C - max difference was 2.68°C). The reduction in thermal discomfort in this scenario could be due to the adaptation of thermoreceptors, or to reductions in cooling rates to levels where discomfort was less stimulated. The relief from the recent discomfort may explain why, later, thermal comfort returned to initial levels in spite of poorer thermal profiles.

  18. Auxin Response Factor SlARF2 Is an Essential Component of the Regulatory Mechanism Controlling Fruit Ripening in Tomato

    PubMed Central

    Hao, Yanwei; Hu, Guojian; Breitel, Dario; Liu, Mingchun; Mila, Isabelle; Frasse, Pierre; Fu, Yongyao; Aharoni, Asaph; Bouzayen, Mondher; Zouine, Mohamed

    2015-01-01

    Ethylene is the main regulator of climacteric fruit ripening, by contrast the putative role of other phytohormones in this process remains poorly understood. The present study brings auxin signaling components into the mechanism regulating tomato fruit ripening through the functional characterization of Auxin Response Factor2 (SlARF2) which encodes a downstream component of auxin signaling. Two paralogs, SlARF2A and SlARF2B, are found in the tomato genome, both displaying a marked ripening-associated expression but distinct responsiveness to ethylene and auxin. Down-regulation of either SlARF2A or SlARF2B resulted in ripening defects while simultaneous silencing of both genes led to severe ripening inhibition suggesting a functional redundancy among the two ARFs. Tomato fruits under-expressing SlARF2 produced less climacteric ethylene and exhibited a dramatic down-regulation of the key ripening regulators RIN, CNR, NOR and TAGL1. Ethylene treatment failed to reverse the non-ripening phenotype and the expression of ethylene signaling and biosynthesis genes was strongly altered in SlARF2 down-regulated fruits. Although both SlARF proteins are transcriptional repressors the data indicate they work as positive regulators of tomato fruit ripening. Altogether, the study defines SlARF2 as a new component of the regulatory network controlling the ripening process in tomato. PMID:26716451

  19. ACAP-A/B are ArfGAP homologs in dictyostelium involved in sporulation but not in chemotaxis.

    PubMed

    Chen, Pei-Wen; Randazzo, Paul A; Parent, Carole A

    2010-01-07

    Arfs and Arf GTPase-activating proteins (ArfGAPs) are regulators of membrane trafficking and actin dynamics in mammalian cells. In this study, we identified a primordial Arf, ArfA, and two ArfGAPs (ACAP-A/B) containing BAR, PH, ArfGAP and Ankyrin repeat domains in the eukaryote Dictyostelium discoideum. In vitro, ArfA has similar nucleotide binding properties as mammalian Arfs and, with GTP bound, is a substrate for ACAP-A and B. We also investigated the physiological functions of ACAP-A/B by characterizing cells lacking both ACAP-A and B. Although ACAP-A/B knockout cells showed no defects in cell growth, migration or chemotaxis, they exhibited abnormal actin protrusions and approximately 50% reduction in spore yield. We conclude that while ACAP-A/B have a conserved biochemical mechanism and effect on actin organization, their role in migration is not conserved. The absence of an effect on Dictyostelium migration may be due to a specific requirement for ACAPs in mesenchymal migration, which is observed in epithelial cancer cells where most studies of mammalian ArfGAPs were performed.

  20. Process improvements in the production of silicon immersion gratings

    NASA Astrophysics Data System (ADS)

    Brooks, Cynthia B.; Kidder, Benjamin; Grigas, Michelle; Griesmann, Ulf; Wilson, Daniel W.; Muller, Richard E.; Jaffe, Daniel T.

    2016-07-01

    We have explored a number of lithographic techniques and improvements to produce the resist lines that then define the grating groove edges of silicon immersion gratings. In addition to our lithographic process using contact printing with photomasks, which is our primary technique for the production of immersion gratings, we explored two alternative fabrication methods, direct-write electron beam and photo-lithography. We have investigated the application of antireflection (AR) coatings during our contact printing lithography method to reduce the effect of Fizeau fringes produced by the contact of the photomask on the photoresist surface. This AR coating reduces the amplitude of the periodic errors by a factor of 1.5. Electron beam (e-beam) patterning allows us to manufacture gratings that can be used in first order, with groove spacing down to 0.5 micrometer or smaller (2,000 grooves/mm), but could require significant e-beam write times of up to one week to pattern a full-sized grating. The University of Texas at Austin silicon diffractive optics group is working with Jet Propulsion Laboratory to develop an alternate e-beam method that employs chromium liftoff to reduce the write time by a factor of 10. We are working with the National Institute of Standards and Technology using laser writing to explore the possibility of creating very high quality gratings without the errors introduced during the contact-printing step. Both e-beam and laser patterning bypass the contact photolithography step and directly write the lines in photoresist on our silicon substrates, but require increased cost, time, and process complexity.

  1. Immersed interface methods. Final report

    SciTech Connect

    LeVeque, R.J.; Adams, L.M.; Bube, K.P.

    1996-11-01

    Cartesian grid methods encompass a wide variety of techniques used to solve partial differential equations in more than one space dimension on uniform Cartesian grids even when the underlying geometry is complex and not aligned with the grid. The authors` groups work on Immersed Interface Methods (IIM) was originally motivated by the desire to understand and improve the ``Immersed Boundary Method``, developed by Charles Peskin to solve incompressible Navier-Stokes equations in complicated geometries with moving elastic boundaries. This report briefly discusses the development of the Immersed Interface Methods and gives examples of application of the method in solving several partial differential equations.

  2. Force-controlled inorganic crystallization lithography.

    PubMed

    Cheng, Chao-Min; LeDuc, Philip R

    2006-09-20

    Lithography plays a key role in integrated circuits, optics, information technology, biomedical applications, catalysis, and separation technologies. However, inorganic lithography techniques remain of limited utility for applications outside of the typical foci of integrated circuit manufacturing. In this communication, we have developed a novel stamping method that applies pressure on the upper surface of the stamp to regulate the dewetting process of the inorganic buffer and the evaporation rate of the solvent in this buffer between the substrate and the surface of the stamp. We focused on generating inorganic microstructures with specific locations and also on enabling the ability to pattern gradients during the crystallization of the inorganic salts. This approach utilized a combination of lithography with bottom-up growth and assembly of inorganic crystals. This work has potential applications in a variety of fields, including studying inorganic material patterning and small-scale fabrication technology.

  3. The GDP-bound form of Arf6 is located at the plasma membrane.

    PubMed

    Macia, Eric; Luton, Frédéric; Partisani, Mariagrazia; Cherfils, Jacqueline; Chardin, Pierre; Franco, Michel

    2004-05-01

    The function of Arf6 has been investigated largely by using the T27N and the Q67L mutants, which are thought to be blocked in GDP- and GTP-bound states, respectively. However, these mutants have been poorly characterized biochemically. Here, we found that Arf6(T27N) is not an appropriate marker of the inactive GDP-bound form because it has a high tendency to lose its nucleotide in vitro and to denature. As a consequence, most of the protein is aggregated in vivo and localizes to detergent-insoluble structures. However, a small proportion of Arf6(T27N) is able to form a stable complex with its exchange factor EFA6 at the plasma membrane, accounting for its dominant-negative phenotype. To define the cellular localization of Arf6-GDP, we designed a new mutant, Arf6(T44N). In vitro, this mutant has a 30-fold decreased affinity for GTP. In vivo, it is mostly GDP bound and, in contrast to the wild type, does not switch to the active conformation when expressed with EFA6. This GDP-locked mutant is found at the plasma membrane, where it localizes with EFA6 and Ezrin in actin- and phosphatidylinositol (4,5)-bisphosphate-enriched domains. From these results, we conclude that the Arf6 GDP-GTP cycle takes place at the plasma membrane.

  4. Increased gene dosage of Ink4a/Arf results in cancer resistance and normal aging

    PubMed Central

    Matheu, Ander; Pantoja, Cristina; Efeyan, Alejo; Criado, Luis M.; Martín-Caballero, Juan; Flores, Juana M.; Klatt, Peter; Serrano, Manuel

    2004-01-01

    Mammalian genes frequently present allelic variants that differ in their expression levels and that, in the case of tumor suppressor genes, can be of relevance for cancer susceptibility and aging. We report here the characterization of a novel mouse model with increased activity for the Ink4a and Arf tumor suppressors. We have generated a “super Ink4a/Arf” mouse strain carrying a transgenic copy of the entire Ink4a/Arf locus. Cells derived from super Ink4a/Arf mice have increased resistance to in vitro immortalization and oncogenic transformation. Importantly, super Ink4a/Arf mice manifest higher resistance to cancer compared to normal, nontransgenic, mice. Finally, super Ink4a/Arf mice have normal aging and lifespan. Together, these results indicate that modest increases in the activity of the Ink4a/Arf tumor suppressor result in a beneficial cancer-resistant phenotype without affecting normal viability or aging. PMID:15520276

  5. Absence of p16INK4a and truncation of ARF tumor suppressors in chickens

    PubMed Central

    Kim, Soo-Hyun; Mitchell, Michael; Fujii, Hideta; Llanos, Susana; Peters, Gordon

    2003-01-01

    The INK4b-ARF-INK4a locus on human chromosome 9p21 (Human Genome Organization designation CDKN2B-CDKN2A), and the corresponding locus on mouse chromosome 4, encodes three distinct products: two members of the INK4 cyclin-dependent kinase inhibitor family and a completely unrelated protein, ARF, whose carboxyl-terminal half is specified by the second exon of INK4a but in an alternative reading frame. As INK4 proteins block the phosphorylation of the retinoblastoma gene product and ARF protects p53 from degradation, the locus plays a key role in tumor suppression and the control of cell proliferation. To gain further insights into the relative importance of INK4a and ARF in different settings, we have isolated and characterized the equivalent locus in chickens. Surprisingly, although we identified orthologues of INK4b and ARF, chickens do not encode an equivalent of INK4a. Moreover, the reading frame for chicken ARF does not extend into exon 2, because splicing occurs in a different register to that used in mammals. The resultant 60-aa product nevertheless shares functional attributes with its mammalian counterparts. As well as indicating that the locus has been subject to dynamic evolutionary pressures, these unexpected findings suggest that in chickens, the tumor-suppressor functions of INK4a have been compensated for by other genes. PMID:12506196

  6. Data sharing system for lithography APC

    NASA Astrophysics Data System (ADS)

    Kawamura, Eiichi; Teranishi, Yoshiharu; Shimabara, Masanori

    2007-03-01

    We have developed a simple and cost-effective data sharing system between fabs for lithography advanced process control (APC). Lithography APC requires process flow, inter-layer information, history information, mask information and so on. So, inter-APC data sharing system has become necessary when lots are to be processed in multiple fabs (usually two fabs). The development cost and maintenance cost also have to be taken into account. The system handles minimum information necessary to make trend prediction for the lots. Three types of data have to be shared for precise trend prediction. First one is device information of the lots, e.g., process flow of the device and inter-layer information. Second one is mask information from mask suppliers, e.g., pattern characteristics and pattern widths. Last one is history data of the lots. Device information is electronic file and easy to handle. The electronic file is common between APCs and uploaded into the database. As for mask information sharing, mask information described in common format is obtained via Wide Area Network (WAN) from mask-vender will be stored in the mask-information data server. This information is periodically transferred to one specific lithography-APC server and compiled into the database. This lithography-APC server periodically delivers the mask-information to every other lithography-APC server. Process-history data sharing system mainly consists of function of delivering process-history data. In shipping production lots to another fab, the product-related process-history data is delivered by the lithography-APC server from the shipping site. We have confirmed the function and effectiveness of data sharing systems.

  7. Resolution improvement and pattern generator development for the maskless micro-ion-beam reduction lithography system

    NASA Astrophysics Data System (ADS)

    Jiang, Ximan

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

  8. System considerations for maskless lithography

    NASA Astrophysics Data System (ADS)

    Karnowski, Thomas; Joy, David; Allard, Larry; Clonts, Lloyd

    2004-05-01

    Lithographic processes for printing device structures on integrated circuits (ICs) are the fundamental technology behind Moore's law. Next-generation techniques like maskless lithography or ML2 have the advantage that the long, tedious and expensive process of fabricating a unique mask for the manufactured chip is not necessary. However, there are some rather daunting prblems with establishing ML2 as a viable commercial technology. The data rate necessary for ML2 to be competitive in manufacturing is not feasible with technology in the near future. There is also doubt that the competing technologies for the writing mechanisms and corresponding photoresist (or analogous medium) will be able to accurately produce the desired patterns necessary to produce multi-layer semiconductor devices. In this work, we model the maskless printing system from a signal processing point of view, utilizing image processing algorithms and concepts to study the effects of various real-world constraints and their implications for a ML2 system. The ML2 elements are discrete devices, and it is doubtful that their motion can be controlled to the level where a one-for-one element to exposed pixel relationship is allowable. Some level of sub-element resolution can be achieved with gray scale levels, but with the highly integrated manufacturing practices required to achieve massive parallelism, the most effective elements will be simple on-ofrf switches that fire a fixed level of energy at the target medium. Consequently gray-scale level devidces are likely not an option. Another problem with highly integrated manufacturing methods is device uniformity. Consequently, we analyze the redundant scanning array concept (RSA) conceived by Berglund et al. which can defeat many of these problems. We determine some basic equations governing its application and we focus on applying the technique to an array of low-energy electron emitters. Using the results of Monte Carlo simulations on electron beam

  9. SYSTEM CONSIDERATIONS FOR MASKLESS LITHOGRAPHY

    SciTech Connect

    Karnowski, Thomas Paul; Joy, David; Allard Jr, Lawrence Frederick; Clonts, Lloyd G

    2004-01-01

    Lithographic processes for printing device structures on integrated circuits (ICs) are the fundamental technology behind Moore's law. Next-generation techniques like maskless lithography or ML2 have the advantage that the long, tedious and expensive process of fabricating a unique mask for the manufactured chip is not necessary. However, there are some rather daunting problems with establishing ML2 as a viable commercial technology. The data rate necessary for ML2 to be competitive in manufacturing is not feasible with technology in the near future. There is also doubt that the competing technologies for the writing mechanisms and corresponding photoresist (or analogous medium) will be able to accurately produce the desired patterns necessary to produce multi-layer semiconductor devices. In this work, we model the maskless printing system from a signal processing point of view, utilizing image processing algorithms and concepts to study the effects of various real-world constraints and their implications for a ML2 system. The ML2 elements are discrete devices, and it is doubtful that their motion can be controlled to the level where a one-for-one element to exposed pixel relationship is allowable. Some level of sub-element resolution can be achieved with gray scale levels, but with the highly integrated manufacturing practices required to achieve massive parallelism, the most effective elements will be simple on-off switches that fire a fixed level of energy at the target medium. Consequently gray-scale level devices are likely not an option. Another problem with highly integrated manufacturing methods is device uniformity. Consequently, we analyze the redundant scanning array concept (RSA) conceived by Berglund et al. which can defeat many of these problems. We determine some basic equations governing its application and we focus on applying the technique to an array of low-energy electron emitters. Using the results of Monte Carlo simulations on electron beam

  10. Nanostructures of functionalized gold nanoparticles prepared by particle lithography with organosilanes.

    PubMed

    Lusker, Kathie L; Li, Jie-Ren; Garno, Jayne C

    2011-11-01

    Periodic arrays of organosilane nanostructures were prepared with particle lithography to define sites for selective adsorption of functionalized gold nanoparticles. Essentially, the approach for nanoparticle lithography consists of procedures with two masks. First, latex mesospheres were used as a surface mask for deposition of an organosilane vapor, to produce an array of holes within a covalently bonded, organic thin film. The latex particles were readily removed with solvent rinses to expose discrete patterns of nanosized holes of uncovered substrate. The nanostructured film of organosilanes was then used as a surface mask for a second patterning step, with immersion in a solution of functionalized nanoparticles. Patterned substrates were fully submerged in a solution of surface-active gold nanoparticles coated with 3-mercaptopropyltrimethoxysilane. Regularly shaped, nanoscopic areas of bare substrate produced by removal of the latex mask provided sites to bind silanol-terminated gold nanoparticles, and the methyl-terminated areas of the organosilane film served as an effective resist, preventing nonspecific adsorption on masked areas. Characterizations with atomic force microscopy demonstrate the steps for lithography with organosilanes and functionalized nanoparticles. Patterning was accomplished for both silicon and glass substrates, to generate nanostructures with periodicities of 200-300 nm that match the diameters of the latex mesospheres of the surface masks. Nanoparticles were shown to bind selectively to uncovered, exposed areas of the substrate and did not attach to the methyl-terminal groups of the organosilane mask. Billions of well-defined nanostructures of nanoparticles can be generated using this high-throughput approach of particle lithography, with exquisite control of surface density and periodicity at the nanoscale.

  11. Significance of MDM2 and P14ARF polymorphisms in susceptibility to differentiated thyroid carcinoma

    PubMed Central

    Zhang, Fenghua; Xu, Li; Wei, Qingyi; Song, Xicheng; Sturgis, Erich M.; Li, Guojun

    2012-01-01

    Background Murine double minute 2 (MDM2) oncoprotein and p14ARF tumor suppressor play pivotal roles in regulating p53 and function in the MAPK pathway, which is frequently mutated in differentiated thyroid carcinoma (DTC). We hypothesized that functional polymorphisms in the promoters of MDM2 and p14ARF contribute to the inter-individual difference in predisposition to DTC. Methods MDM2-rs2279744, MDM2-rs937283, p14ARF-rs3731217, and p14ARF-rs3088440 were genotyped in 303 patients with DTC and 511 cancer-free controls. Multivariate logistic regression analysis was performed to calculate odds ratios (ORs) and 95% confidence intervals (CIs). Results MDM2-rs2279744 and p14ARF-rs3731217 were associated with a significantly increased risk of DTC (MDM2-rs2279744: TT vs. TG/GG, OR = 1.5, 95% CI, 1.1–2.0; p14ARF-rs3731217: TG/GG vs. TT, OR = 1.7, 95% CI, 1.2–2.3). No association was found for MDM2-rs937283 or p14ARF-rs3088440. Individuals carrying 3–4 risk genotypes of MDM2 and p14ARF had 2.2 times (95% CI, 1.4–3.5) the DTC risk of individuals carrying 0–1 risk genotypes (Ptrend = 0.021). The combined effect of MDM2 and p14ARF on DTC risk was confined to young subjects (≤45 years), non-smokers, non-drinkers, and subjects with a first-degree family history of cancer. These associations were quite similar in strength when cases were restricted to those with papillary thyroid cancer. Conclusion Our results suggest that polymorphisms of MDM2 and p14ARF contribute to the inter-individual difference in susceptibility to DTC, either alone or more likely jointly. The observed associations warrant further confirmation in independent studies. PMID:23218882

  12. Interference Lithography for Optical Devices and Coatings

    DTIC Science & Technology

    2010-01-01

    fabricate self- healing coatings that use water from the environment to catalyze polymerization. Polymerization induced phase separation was used to... catalyzed by moisture in air; if the indices of the two polymers are matched, the coatings turn transparent after healing. Interference lithography...self- healing coatings that use water from the environment to catalyze polymerization. Polymerization induced phase separation was used to sequester

  13. Liquid-Phase Beam Pen Lithography.

    PubMed

    He, Shu; Xie, Zhuang; Park, Daniel J; Liao, Xing; Brown, Keith A; Chen, Peng-Cheng; Zhou, Yu; Schatz, George C; Mirkin, Chad A

    2016-02-24

    Beam pen lithography (BPL) in the liquid phase is evaluated. The effect of tip-substrate gap and aperture size on patterning performance is systematically investigated. As a proof-of-concept experiment, nanoarrays of nucleotides are synthesized using BPL in an organic medium, pointing toward the potential of using liquid phase BPL to perform localized photochemical reactions that require a liquid medium.

  14. NXT:1980Di immersion scanner for 7nm and 5nm production nodes

    NASA Astrophysics Data System (ADS)

    de Graaf, Roelof; Weichselbaum, Stefan; Droste, Richard; McLaren, Matthew; Koek, Bert; de Boeij, Wim

    2016-03-01

    Immersion scanners remain the critical lithography workhorses in semiconductor device manufacturing. When progressing towards the 7nm device node for logic and D18 device node for DRAM production, pattern-placement and layer-to-layer overlay requirements keep progressively scaling down and consequently require system improvements in immersion scanners. The on-product-overlay requirements are approaching levels of only a few nanometers, imposing stringent requirements on the scanner tool design in terms of reproducibility, accuracy and stability. In this paper we report on the performance of the NXT:1980Di immersion scanner. The NXT:1980Di builds upon the NXT:1970Ci, that is widely used for 16nm, 14nm and 10nm high-volume manufacturing. We will discuss the NXT:1980Di system- and sub-system/module enhancements that drive the scanner overlay, focus and productivity performance. Overlay, imaging, focus, productivity and defectivity data will be presented for multiple tools. To further reduce the on-product overlay system performance, alignment sensor contrast improvements as well as active reticle temperature conditioning are implemented on the NXT:1980Di. Reticle temperature conditioning will reduce reticle heating overlay and the higher contrast alignment sensor will improve alignment robustness for processed alignment targets. Due to an increased usage of multiple patterning techniques, an increased number of immersion exposures is required. NXT:1980Di scanner design modifications raised productivity levels from 250wph to 275wph. This productivity enhancement provides lower cost of ownership (CoO) for customers using immersion technology.

  15. Azidothymidine and cisplatin increase p14ARF expression in OVCAR-3 ovarian cancer cell line

    SciTech Connect

    Vaskivuo, Liisa; Rysae, Jaana; Koivuperae, Johanna; Myllynen, Paeivi; Vaskivuo, Tommi; Chvalova, Katerina; Serpi, Raisa; Savolainen, Eeva-Riitta; Puistola, Ulla; Vaehaekangas, Kirsi . E-mail: kirsi.vahakangas@uku.fi

    2006-10-01

    p14{sup ARF} tumor suppressor protein regulates p53 by interfering with mdm2-p53 interaction. p14{sup ARF} is activated in response to oncogenic stimuli but little is known of the responses of endogenous p14{sup ARF} to different types of cellular stress or DNA damage. Azidothymidine (AZT) is being tested in several clinical trials as an enhancer of anticancer chemotherapy. However, the knowledge of the relationship between AZT and cellular pathways, e.g. p53 pathway, is very limited. In this study, we show that AZT, cisplatin (CDDP) and docetaxel (DTX) all induce unique molecular responses in OVCAR-3 ovarian carcinoma cells carrying a mutated p53, while in A2780, ovarian carcinoma and MCF-7 breast carcinoma cells with wild type p53, all of these drugs cause similar p53 responses. We found that endogenous p14{sup ARF} protein in OVCAR-3 cells is down-regulated by DTX but induced by AZT and a short CDDP pulse treatment. In HT-29 colon carcinoma cells with a mutated p53, all treatments down-regulated p14{sup ARF} protein. Both CDDP and AZT increased the expression of p14ARF mRNA in OVCAR-3 cells. Differences in cell death induced by these drugs did not explain the differences in protein and mRNA expressions. No increase in the level of either c-Myc or H-ras oncoproteins was seen in OVCAR-3 cells after AZT or CDDP-treatment. These results suggest that p14{sup ARF} can respond to DNA damage without oncogene activation in cell lines without functional p53.

  16. Deblocking reaction of chemically amplified ArF positive resists

    NASA Astrophysics Data System (ADS)

    Yamana, Mitsuharu; Itani, Toshiro; Yoshino, Hiroshi; Hashimoto, Shuichi; Tanabe, Hiroyoshi; Kasama, Kunihiko

    1998-06-01

    Deblocking reaction mechanisms and lithographic performance in chemically amplified positive ArF resists were investigated by analyzing acid concentration and blocking level. The resists consisted of triphenylsulfonium triflate as a acid generator and either the copolymer, poly(carboxy- tetracyclododecyl methacrylate70-co- tetrahydropyranylcarboxy-tetracyclododecyl methacrylate30) or the terpolymer, poly(tricyclodecylacrylate60- co-tetrahydropyranylmethacrylate20-co-methacrylic acid20). The deblocking reaction mechanisms were evaluated from Arrhenius plots of the deblocking reaction rate constant. It was found that the deblocking reaction of both resists is ruled by two rate-determining steps, i.e., reaction-controlled in the low-temperature region and acid- diffusion-controlled in the high-temperature region. Furthermore, the copolymer resist had better post-exposure- delay (PED) stability. To clarify this result, acid loss caused by air-born contamination effect on deblocking reaction was investigated. The change of amount of blocking group by acid loss was small for the copolymer. Therefore the copolymer resist had better PED stability. Furthermore, the post-exposure bake (PEB) sensitivity of linewidth of the copolymer resist was smaller than that of the terpolymer resist. Both deblocking reaction rate constant and reverse reaction rate constant of the copolymer resist increased with PEB temperature. As a result, equilibrium constant of the copolymer was not valuable with temperature. This is the reason why the copolymer resist has low PEB sensitivity. It is concluded that small acid loss effect on deblocking reaction induces better PED stability. A resist with reverse reaction has an advantage for PEB temperature sensitivity.

  17. Genetic interactions in yeast between Ypt GTPases and Arf guanine nucleotide exchangers.

    PubMed Central

    Jones, S; Jedd, G; Kahn, R A; Franzusoff, A; Bartolini, F; Segev, N

    1999-01-01

    Two families of GTPases, Arfs and Ypt/rabs, are key regulators of vesicular transport. While Arf proteins are implicated in vesicle budding from the donor compartment, Ypt/rab proteins are involved in the targeting of vesicles to the acceptor compartment. Recently, we have shown a role for Ypt31/32p in exit from the yeast trans-Golgi, suggesting a possible function for Ypt/rab proteins in vesicle budding as well. Here we report the identification of a new member of the Sec7-domain family, SYT1, as a high-copy suppressor of a ypt31/32 mutation. Several proteins that belong to the Sec7-domain family, including the yeast Gea1p, have recently been shown to stimulate nucleotide exchange by Arf GTPases. Nucleotide exchange by Arf GTPases, the switch from the GDP- to the GTP-bound form, is thought to be crucial for their function. Sec7p itself has an important role in the yeast secretory pathway. However, its mechanism of action is not yet understood. We show that all members of the Sec7-domain family exhibit distinct genetic interactions with the YPT genes. Biochemical assays demonstrate that, although the homology between the members of the Sec7-domain family is relatively low (20-35%) and limited to a small domain, they all can act as guanine nucleotide exchange factors (GEFs) for Arf proteins, but not for Ypt GTPases. The Sec7-domain of Sec7p is sufficient for this activity. Interestingly, the Sec7 domain activity is inhibited by brefeldin A (BFA), a fungal metabolite that inhibits some of the Arf-GEFs, indicating that this domain is a target for BFA. These results demonstrate that the ability to act as Arf-GEFs is a general property of all Sec7-domain proteins in yeast. The genetic interactions observed between Arf GEFs and Ypt GTPases suggest the existence of a Ypt-Arf GTPase cascade in the secretory pathway. PMID:10430582

  18. CDK5RAP3 is a novel repressor of p14ARF in hepatocellular carcinoma cells.

    PubMed

    Mak, Grace Wing-Yan; Lai, Wai-Lung; Zhou, Yuan; Li, Mingtao; Ng, Irene Oi-Lin; Ching, Yick-Pang

    2012-01-01

    CDK5 regulatory subunit associated protein 3 (CDK5RAP3) is a novel activator of PAK4 and processes important pro-metastatic function in hepatocarcinogenesis. However, it remains unclear if there are other mechanisms by which CDK5RAP3 promotes HCC metastasis. Here, we showed that in CDK5RAP3 stable knockdown SMMC-7721 HCC cells, p14(ARF) tumor suppressor was upregulated at protein and mRNA levels, and ectopic expression of CDK5RAP3 was found to repress the transcription of p14(ARF). Using chromatin immunoprecipitation assay, we demonstrated that CDK5RAP3 bound to p14(ARF) promoter in vivo. Furthermore, knockdown of p14(ARF) in CDK5RAP3 stable knockdown HCC cells reversed the suppression of HCC cell invasiveness mediated by knockdown of CDK5RAP3. Taken together, our findings provide the new evidence that overexpression of CDK5RAP3 promotes HCC metastasis via downregulation of p14(ARF).

  19. CDK5RAP3 Is a Novel Repressor of p14ARF in Hepatocellular Carcinoma Cells

    PubMed Central

    Mak, Grace Wing-Yan; Li, Mingtao; Ng, Irene Oi-Lin; Ching, Yick-Pang

    2012-01-01

    CDK5 regulatory subunit associated protein 3 (CDK5RAP3) is a novel activator of PAK4 and processes important pro-metastatic function in hepatocarcinogenesis. However, it remains unclear if there are other mechanisms by which CDK5RAP3 promotes HCC metastasis. Here, we showed that in CDK5RAP3 stable knockdown SMMC-7721 HCC cells, p14ARF tumor suppressor was upregulated at protein and mRNA levels, and ectopic expression of CDK5RAP3 was found to repress the transcription of p14ARF. Using chromatin immunoprecipitation assay, we demonstrated that CDK5RAP3 bound to p14ARF promoter in vivo. Furthermore, knockdown of p14ARF in CDK5RAP3 stable knockdown HCC cells reversed the suppression of HCC cell invasiveness mediated by knockdown of CDK5RAP3. Taken together, our findings provide the new evidence that overexpression of CDK5RAP3 promotes HCC metastasis via downregulation of p14ARF. PMID:22860085

  20. A human exchange factor for ARF contains Sec7- and pleckstrin-homology domains.

    PubMed

    Chardin, P; Paris, S; Antonny, B; Robineau, S; Béraud-Dufour, S; Jackson, C L; Chabre, M

    1996-12-05

    The small G protein ARF1 is involved in the coating of vesicles that bud from the Golgi compartments. Its activation is controlled by as-yet unidentified guanine-nucleotide exchange factors. Gea1, the first ARF exchange factor to be discovered in yeast, is a large protein containing a domain of homology with Sec7, another yeast protein that is also involved in secretion. Here we characterized a smaller human protein (relative molecular mass 47K) named ARNO, which contains a central Sec7 domain that promotes guanine-nucleotide exchange on ARF1. ARNO also contains an amino-terminal coiled-coil motif and a carboxy-terminal pleckstrin-homology (PH) domain. The PH domain mediates an enhancement of ARNO exchange activity by negatively charged phospholipid vesicles supplemented with phosphatidylinositol bisphosphate. The exchange activity of ARNO is not inhibited by brefeldin A, an agent known to block vesicular transport and inhibit the exchange activity on ARF1 in cell extracts. This suggests that a regulatory component which is sensitive to brefeldin A associates with ARNO in vivo, possibly through the amino-terminal coiled-coil. We propose that other proteins with a Sec7 domain regulate different members of the ARF family.

  1. Natural variation in ARF18 gene simultaneously affects seed weight and silique length in polyploid rapeseed

    PubMed Central

    Liu, Jing; Hua, Wei; Hu, Zhiyong; Yang, Hongli; Zhang, Liang; Li, Rongjun; Deng, Linbin; Sun, Xingchao; Wang, Xinfa; Wang, Hanzhong

    2015-01-01

    Seed weight (SW), which is one of the three major factors influencing grain yield, has been widely accepted as a complex trait that is controlled by polygenes, particularly in polyploid crops. Brassica napus L., which is the second leading crop source for vegetable oil around the world, is a tetraploid (4×) species. In the present study, we identified a major quantitative trait locus (QTL) on chromosome A9 of rapeseed in which the genes for SW and silique length (SL) were colocated. By fine mapping and association analysis, we uncovered a 165-bp deletion in the auxin-response factor 18 (ARF18) gene associated with increased SW and SL. ARF18 encodes an auxin-response factor and shows inhibitory activity on downstream auxin genes. This 55-aa deletion prevents ARF18 from forming homodimers, in turn resulting in the loss of binding activity. Furthermore, reciprocal crossing has shown that this QTL affects SW by maternal effects. Transcription analysis has shown that ARF18 regulates cell growth in the silique wall by acting via an auxin-response pathway. Together, our results suggest that ARF18 regulates silique wall development and determines SW via maternal regulation. In addition, our study reveals the first (to our knowledge) QTL in rapeseed and may provide insights into gene cloning involving polyploid crops. PMID:26324896

  2. ARF6 controls post-endocytic recycling through its downstream exocyst complex effector

    PubMed Central

    Prigent, Magali; Dubois, Thierry; Raposo, Graça; Derrien, Valérie; Tenza, Danièle; Rossé, Carine; Camonis, Jacques; Chavrier, Philippe

    2003-01-01

    The small guanosine triphosphate (GTP)–binding protein ADP-ribosylation factor (ARF) 6 regulates membrane recycling to regions of plasma membrane remodeling via the endocytic pathway. Here, we show that GTP–bound ARF6 interacts with Sec10, a subunit of the exocyst complex involved in docking of vesicles with the plasma membrane. We found that Sec10 localization in the perinuclear region is not restricted to the trans-Golgi network, but extends to recycling endosomes. In addition, we report that depletion of Sec5 exocyst subunit or dominant inhibition of Sec10 affects the function and the morphology of the recycling pathway. Sec10 is found to redistribute to ruffling areas of the plasma membrane in cells expressing GTP-ARF6, whereas dominant inhibition of Sec10 interferes with ARF6-induced cell spreading. Our paper suggests that ARF6 specifies delivery and insertion of recycling membranes to regions of dynamic reorganization of the plasma membrane through interaction with the vesicle-tethering exocyst complex. PMID:14662749

  3. ARF6 controls post-endocytic recycling through its downstream exocyst complex effector.

    PubMed

    Prigent, Magali; Dubois, Thierry; Raposo, Graça; Derrien, Valérie; Tenza, Danièle; Rossé, Carine; Camonis, Jacques; Chavrier, Philippe

    2003-12-08

    The small guanosine triphosphate (GTP)-binding protein ADP-ribosylation factor (ARF) 6 regulates membrane recycling to regions of plasma membrane remodeling via the endocytic pathway. Here, we show that GTP-bound ARF6 interacts with Sec10, a subunit of the exocyst complex involved in docking of vesicles with the plasma membrane. We found that Sec10 localization in the perinuclear region is not restricted to the trans-Golgi network, but extends to recycling endosomes. In addition, we report that depletion of Sec5 exocyst subunit or dominant inhibition of Sec10 affects the function and the morphology of the recycling pathway. Sec10 is found to redistribute to ruffling areas of the plasma membrane in cells expressing GTP-ARF6, whereas dominant inhibition of Sec10 interferes with ARF6-induced cell spreading. Our paper suggests that ARF6 specifies delivery and insertion of recycling membranes to regions of dynamic reorganization of the plasma membrane through interaction with the vesicle-tethering exocyst complex.

  4. Mechanism of ribosome rescue by ArfA and RF2

    PubMed Central

    Demo, Gabriel; Svidritskiy, Egor; Madireddy, Rohini; Diaz-Avalos, Ruben; Grant, Timothy; Grigorieff, Nikolaus; Sousa, Duncan; Korostelev, Andrei A

    2017-01-01

    ArfA rescues ribosomes stalled on truncated mRNAs by recruiting release factor RF2, which normally binds stop codons to catalyze peptide release. We report two 3.2 Å resolution cryo-EM structures – determined from a single sample – of the 70S ribosome with ArfA•RF2 in the A site. In both states, the ArfA C-terminus occupies the mRNA tunnel downstream of the A site. One state contains a compact inactive RF2 conformation. Ordering of the ArfA N-terminus in the second state rearranges RF2 into an extended conformation that docks the catalytic GGQ motif into the peptidyl-transferase center. Our work thus reveals the structural dynamics of ribosome rescue. The structures demonstrate how ArfA ‘senses’ the vacant mRNA tunnel and activates RF2 to mediate peptide release without a stop codon, allowing stalled ribosomes to be recycled. DOI: http://dx.doi.org/10.7554/eLife.23687.001 PMID:28300532

  5. ARF1 controls Rac1 signaling to regulate migration of MDA-MB-231 invasive breast cancer cells.

    PubMed

    Lewis-Saravalli, Sebastian; Campbell, Shirley; Claing, Audrey

    2013-09-01

    ADP-ribosylation factors (ARFs) are monomeric G proteins that regulate many cellular processes such as reorganization of the actin cytoskeleton. We have previously shown that ARF1 is overexpressed in highly invasive breast cancer cells and contribute to their enhanced migration. In this study, we propose to define the molecular mechanism by which ARF1 regulates this complex cellular response by investigating the role of this ARF GTPase on the activation process of Rac1, a Rho GTPase, associated with lamellipodia formation during cell migration. Here, we first show that inhibition of ARF1 or Rac1 expression markedly impacts the ability of MDA-MB-231 cells to migrate upon EGF stimulation. However, the effect of ARF1 depletion can be reversed by overexpression of the Rac1 active mutant, Rac1 Q(61)L. Depletion of ARF1 also impairs the ability of EGF stimulation to promote GTP-loading of Rac1. To further investigate the possible cross-talk between ARF1 and Rac1, we next examined whether they could form a complex. We observed that the two GTPases could directly interact independently of the nature of the nucleotide bound to them. EGF treatment however resulted in the association of Rac1 with its effector IRSp53, which was completely abrogated in ARF1 depleted cells. We present evidences that this ARF isoform is responsible for the plasma membrane targeting of both Rac1 and IRSp53, a step essential for lamellipodia formation. In conclusion, this study provides a new mechanism by which ARF1 regulates cell migration and identifies this GTPase as a promising pharmacological target to reduce metastasis formation in breast cancer patients.

  6. Structural basis for ArfA-RF2-mediated translation termination on mRNAs lacking stop codons.

    PubMed

    Huter, Paul; Müller, Claudia; Beckert, Bertrand; Arenz, Stefan; Berninghausen, Otto; Beckmann, Roland; Wilson, Daniel N

    2017-01-26

    In bacteria, ribosomes stalled on truncated mRNAs that lack a stop codon are rescued by the transfer-messenger RNA (tmRNA), alternative rescue factor A (ArfA) or ArfB systems. Although tmRNA-ribosome and ArfB-ribosome structures have been determined, how ArfA recognizes the presence of truncated mRNAs and recruits the canonical termination release factor RF2 to rescue the stalled ribosomes is unclear. Here we present a cryo-electron microscopy reconstruction of the Escherichia coli 70S ribosome stalled on a truncated mRNA in the presence of ArfA and RF2. The structure shows that the C terminus of ArfA binds within the mRNA entry channel on the small ribosomal subunit, and explains how ArfA distinguishes between ribosomes that bear truncated or full-length mRNAs. The N terminus of ArfA establishes several interactions with the decoding domain of RF2, and this finding illustrates how ArfA recruits RF2 to the stalled ribosome. Furthermore, ArfA is shown to stabilize a unique conformation of the switch loop of RF2, which mimics the canonical translation termination state by directing the catalytically important GGQ motif within domain 3 of RF2 towards the peptidyl-transferase centre of the ribosome. Thus, our structure reveals not only how ArfA recruits RF2 to the ribosome but also how it promotes an active conformation of RF2 to enable translation termination in the absence of a stop codon.

  7. Immersible solar heater for fluids

    DOEpatents

    Kronberg, James W.

    1995-01-01

    An immersible solar heater comprising a light-absorbing panel attached to a frame for absorbing heat energy from the light and transferring the absorbed heat energy directly to the fluid in which the heater is immersed. The heater can be used to heat a swimming pool, for example, and is held in position and at a preselected angle by a system of floats, weights and tethers so that the panel can operate efficiently. A skid can be used in one embodiment to prevent lateral movement of the heater along the bottom of the pool. Alternative embodiments include different arrangements of the weights, floats and tethers and methods for making the heater.

  8. Immersion francaise precoce: Maternelle (Early French Immersion: Kindergarten).

    ERIC Educational Resources Information Center

    Burt, Andy; And Others

    An extensive resource manual and teaching guide is presented for the kindergarten teacher in the early French immersion program. The first three chapters contain introductory material discussing the kindergarten child, this particular program, language development in kindergarten, and the role of the kindergarten teacher which is analagous to that…

  9. Arf nucleotide binding site opener [ARNO] promotes sequential activation of Arf6, Cdc42 and Rac1 and insulin secretion in INS 832/13 β-cells and rat islets

    PubMed Central

    Jayaram, Bhavaani; Syed, Ismail; Kyathanahalli, Chandrashekara N.; Rhodes, Christopher J.; Kowluru, Anjaneyulu

    2011-01-01

    Glucose-stimulated insulin secretion [GSIS] involves interplay between small G-proteins and their regulatory factors. Herein, we tested the hypothesis that Arf nucleotide binding site opener [ARNO], a guanine nucleotide exchange factor [GEF] for the small G-protein Arf6, mediates the functional activation of Arf6, and that ARNO/Arf6 signaling axis, in turn, controls the activation of Cdc42 and Rac1, which have been implicated in GSIS. Molecular biological [i.e., expression of inactive mutants or siRNA] and pharmacological approaches were employed to assess the roles for ARNO/Arf6 signaling pathway in insulin secretion in normal rat islets and INS 832/13 cells. Degrees of activation of Arf6 and Cdc42/Rac1 were quantitated by GST-GGA3 and PAK-1 kinase pull-down assays, respectively. ARNO is expressed in INS 832/13 cells, rat islets and human islets. Expression of inactive mutants of Arf6 [Arf6-T27N] or ARNO [ARNO-E156K] or siRNA-ARNO markedly reduced GSIS in isolated β-cells. secinH3, a selective inhibitor of ARNO/Arf6 signaling axis, also inhibited GSIS in INS 832/13 cells and rat islets. Stimulatory concentrations of glucose promoted Arf6 activation, which was inhibited by secinH3 or siRNA-ARNO, suggesting that ARNO/Arf6 signaling cascade is necessary for GSIS. secinH3 or siRNA-ARNO also inhibited glucose-induced activation of Cdc42 and Rac1 suggesting that ARNO/Arf6 might be upstream to Cdc42 and Rac1 activation steps, which are necessary for GSIS. Lastly, co-immunoprecipitation and confocal microscopic studies suggested increased association between Arf6 and ARNO in glucose-stimulated β-cells. These findings provide the first evidence to implicate ARNO in the sequential activation of Arf6, Cdc42 and Rac1 culminating in GSIS. PMID:21276423

  10. PML IV/ARF interaction enhances p53 SUMO-1 conjugation, activation, and senescence.

    PubMed

    Ivanschitz, Lisa; Takahashi, Yuki; Jollivet, Florence; Ayrault, Olivier; Le Bras, Morgane; de Thé, Hugues

    2015-11-17

    Promyelocytic leukemia protein (PML) nuclear bodies (NBs) recruit multiple partners, including p53 and many of its regulators. NBs are believed to facilitate several posttranslational modifications and are key regulators of senescence. PML, the organizer of NBs, is expressed as a number of splice variants that all efficiently recruit p53 partners. However, overexpression of only one of them, PML IV, triggers p53-driven senescence. Here, we show that PML IV specifically binds ARF, a key p53 regulator. Similar to ARF, PML IV enhances global SUMO-1 conjugation, particularly that of p53, resulting in p53 stabilization and activation. ARF interacts with and stabilizes the NB-associated UBC9 SUMO-conjugating enzyme, possibly explaining PML IV-enhanced SUMOylation. These results unexpectedly link two key tumor suppressors, highlighting their convergence for global control of SUMO conjugation, p53 activation, and senescence induction.

  11. EGFR/ARF6 regulation of Hh signalling stimulates oncogenic Ras tumour overgrowth.

    PubMed

    Chabu, Chiswili; Li, Da-Ming; Xu, Tian

    2017-03-10

    Multiple signalling events interact in cancer cells. Oncogenic Ras cooperates with Egfr, which cannot be explained by the canonical signalling paradigm. In turn, Egfr cooperates with Hedgehog signalling. How oncogenic Ras elicits and integrates Egfr and Hedgehog signals to drive overgrowth remains unclear. Using a Drosophila tumour model, we show that Egfr cooperates with oncogenic Ras via Arf6, which functions as a novel regulator of Hh signalling. Oncogenic Ras induces the expression of Egfr ligands. Egfr then signals through Arf6, which regulates Hh transport to promote Hh signalling. Blocking any step of this signalling cascade inhibits Hh signalling and correspondingly suppresses the growth of both, fly and human cancer cells harbouring oncogenic Ras mutations. These findings highlight a non-canonical Egfr signalling mechanism, centered on Arf6 as a novel regulator of Hh signalling. This explains both, the puzzling requirement of Egfr in oncogenic Ras-mediated overgrowth and the cooperation between Egfr and Hedgehog.

  12. EGFR/ARF6 regulation of Hh signalling stimulates oncogenic Ras tumour overgrowth

    PubMed Central

    Chabu, Chiswili; Li, Da-Ming; Xu, Tian

    2017-01-01

    Multiple signalling events interact in cancer cells. Oncogenic Ras cooperates with Egfr, which cannot be explained by the canonical signalling paradigm. In turn, Egfr cooperates with Hedgehog signalling. How oncogenic Ras elicits and integrates Egfr and Hedgehog signals to drive overgrowth remains unclear. Using a Drosophila tumour model, we show that Egfr cooperates with oncogenic Ras via Arf6, which functions as a novel regulator of Hh signalling. Oncogenic Ras induces the expression of Egfr ligands. Egfr then signals through Arf6, which regulates Hh transport to promote Hh signalling. Blocking any step of this signalling cascade inhibits Hh signalling and correspondingly suppresses the growth of both, fly and human cancer cells harbouring oncogenic Ras mutations. These findings highlight a non-canonical Egfr signalling mechanism, centered on Arf6 as a novel regulator of Hh signalling. This explains both, the puzzling requirement of Egfr in oncogenic Ras-mediated overgrowth and the cooperation between Egfr and Hedgehog. PMID:28281543

  13. ARF and ATM/ATR cooperate in p53-mediated apoptosis upon oncogenic stress

    SciTech Connect

    Pauklin, Siim . E-mail: spauklin@ut.ee; Kristjuhan, Arnold; Maimets, Toivo; Jaks, Viljar

    2005-08-26

    Induction of apoptosis is pivotal for eliminating cells with damaged DNA or deregulated proliferation. We show that tumor suppressor ARF and ATM/ATR kinase pathways cooperate in the induction of apoptosis in response to elevated expression of c-myc, {beta}-catenin or human papilloma virus E7 oncogenes. Overexpression of oncogenes leads to the formation of phosphorylated H2AX foci, induction of Rad51 protein levels and ATM/ATR-dependent phosphorylation of p53. Inhibition of ATM/ATR kinases abolishes both induction of Rad51 and phosphorylation of p53, and remarkably reduces the level of apoptosis induced by co-expression of oncogenes and ARF. However, the induction of apoptosis is downregulated in p53-/- cells and does not depend on activities of ATM/ATR kinases, indicating that efficient induction of apoptosis by oncogene activation depends on coordinated action of ARF and ATM/ATR pathways in the regulation of p53.

  14. Soft molding lithography of conjugated polymers

    NASA Astrophysics Data System (ADS)

    Pisignano, Dario; Persano, Luana; Cingolani, Roberto; Gigli, Giuseppe; Babudri, Francesco; Farinola, Gianluca M.; Naso, Francesco

    2004-02-01

    We report on the nanopatterning of conjugated polymers by soft molding, and exploit the glass transition of the organic compound in conformal contact with an elastomeric element. We succeeded in printing different compounds with resolution down to 300 nm at temperatures up to 300 °C in vacuum. No significant variation of the photoluminescence (PL) spectra nor heavy degradation of the PL quantum yield was observed after the lithography process. Based on the high resolution achieved and on the well-retained luminescence properties of the patterned compounds, we conclude that high-temperature soft lithography is a valid, flexible and straightforward technique for one-step realization of organic-based devices.

  15. Development of new high transmission eaPSM for Negative Tone Development process on wafer

    NASA Astrophysics Data System (ADS)

    Adachi, Takashi; Tani, Ayako; Fujimura, Yukihiro; Yoshikawa, Shingo; Hayano, Katsuya; Morikawa, Yasutaka; Miura, Yoichi; Miyashita, Hiroyuki

    2015-07-01

    The retardation of the development of NGL techniques causes the extension of ArF immersion lithography for 1x-nm node. We have been researching the new phase shift mask's (PSM) material for the next generation ArF lithography. In this reports, we developed the low-k, high transmission PSM and evaluate it. The developed new PSM shows good lithographic performance in wafer and high ArF excimer laser durability. The mask processability were confirmed such as the CD performance, the cross section image, the inspection sensitivity and repair accuracy.

  16. Interactions between Rab and Arf GTPases regulate endosomal phosphatidylinositol-4,5-bisphosphate during endocytic recycling.

    PubMed

    Shi, Anbing; Grant, Barth D

    2013-01-01

    After endocytosis, a selective endocytic recycling process returns many endocytosed molecules back to the plasma membrane. The RAB-10/Rab10 GTPase is known to be a key recycling regulator for specific cargo molecules. New evidence, focused on C. elegans RAB-10 in polarized epithelia, points to a key role of RAB-10 in the regulation of endosomal phosphatidylinositol-4,5-bisphosphate (PI(4,5)P2) levels. In turn, PI(4,5)P2 levels strongly influence the recruitment of many peripheral membrane proteins, including those important for vesicle budding through their membrane bending activities. Part of the effect of RAB-10 on endosomal PI(4,5)P2 is through its newly identified effector CNT-1, a predicted GTPase activating protein (GAP) of the small GTPase ARF-6/Arf6. In mammals PI(4,5)P2 generating enzymes are known Arf6 effectors. In C. elegans we found that RAB-10, CNT-1 and ARF-6 are present on the same endosomes, that RAB-10 recruits CNT-1 to endosomes, and that loss of CNT-1 or RAB-10 leads to overaccumulation of endosomal PI(4,5)P2, presumably via hyperactivation of endosomal ARF-6. In turn this leads to over-recruitment of PI(4,5)P2-dependent membrane-bending proteins RME-1/Ehd and SDPN-1/Syndapin/PACSIN. Conversely, in arf-6 mutants, endosomal PI(4,5)P2 levels were reduced and endosomal recruitment of RME-1 and SDPN-1 failed. This work makes an unexpected link between distinct classes of small GTPases that control endocytic recycling, and provides insight into how this interaction affects endosome function at the level of lipid phosphorylation.

  17. Interactions between Rab and Arf GTPases regulate endosomal phosphatidylinositol-4,5-bisphosphate during endocytic recycling

    PubMed Central

    Shi, Anbing; Grant, Barth D.

    2013-01-01

    After endocytosis, a selective endocytic recycling process returns many endocytosed molecules back to the plasma membrane. The RAB-10/Rab10 GTPase is known to be a key recycling regulator for specific cargo molecules. New evidence, focused on C. elegans RAB-10 in polarized epithelia, points to a key role of RAB-10 in the regulation of endosomal phosphatidylinositol-4,5-bisphosphate (PI(4,5)P2) levels. In turn, PI(4,5)P2 levels strongly influence the recruitment of many peripheral membrane proteins, including those important for vesicle budding through their membrane bending activities. Part of the effect of RAB-10 on endosomal PI(4,5)P2 is through its newly identified effector CNT-1, a predicted GTPase activating protein (GAP) of the small GTPase ARF-6/Arf6. In mammals PI(4,5)P2 generating enzymes are known Arf6 effectors. In C. elegans we found that RAB-10, CNT-1 and ARF-6 are present on the same endosomes, that RAB-10 recruits CNT-1 to endosomes, and that loss of CNT-1 or RAB-10 leads to overaccumulation of endosomal PI(4,5)P2, presumably via hyperactivation of endosomal ARF-6. In turn this leads to over-recruitment of PI(4,5)P2-dependent membrane-bending proteins RME-1/Ehd and SDPN-1/Syndapin/PACSIN. Conversely, in arf-6 mutants, endosomal PI(4,5)P2 levels were reduced and endosomal recruitment of RME-1 and SDPN-1 failed. This work makes an unexpected link between distinct classes of small GTPases that control endocytic recycling, and provides insight into how this interaction affects endosome function at the level of lipid phosphorylation. PMID:23392104

  18. An Automated Reference Frame Selection (ARFS) Algorithm for Cone Imaging with Adaptive Optics Scanning Light Ophthalmoscopy

    PubMed Central

    Salmon, Alexander E.; Cooper, Robert F.; Langlo, Christopher S.; Baghaie, Ahmadreza; Dubra, Alfredo; Carroll, Joseph

    2017-01-01

    Purpose To develop an automated reference frame selection (ARFS) algorithm to replace the subjective approach of manually selecting reference frames for processing adaptive optics scanning light ophthalmoscope (AOSLO) videos of cone photoreceptors. Methods Relative distortion was measured within individual frames before conducting image-based motion tracking and sorting of frames into distinct spatial clusters. AOSLO images from nine healthy subjects were processed using ARFS and human-derived reference frames, then aligned to undistorted AO-flood images by nonlinear registration and the registration transformations were compared. The frequency at which humans selected reference frames that were rejected by ARFS was calculated in 35 datasets from healthy subjects, and subjects with achromatopsia, albinism, or retinitis pigmentosa. The level of distortion in this set of human-derived reference frames was assessed. Results The average transformation vector magnitude required for registration of AOSLO images to AO-flood images was significantly reduced from 3.33 ± 1.61 pixels when using manual reference frame selection to 2.75 ± 1.60 pixels (mean ± SD) when using ARFS (P = 0.0016). Between 5.16% and 39.22% of human-derived frames were rejected by ARFS. Only 2.71% to 7.73% of human-derived frames were ranked in the top 5% of least distorted frames. Conclusion ARFS outperforms expert observers in selecting minimally distorted reference frames in AOSLO image sequences. The low success rate in human frame choice illustrates the difficulty in subjectively assessing image distortion. Translational Relevance Manual reference frame selection represented a significant barrier to a fully automated image-processing pipeline (including montaging, cone identification, and metric extraction). The approach presented here will aid in the clinical translation of AOSLO imaging. PMID:28392976

  19. Protein-protein interaction and gene co-expression maps of ARFs and Aux/IAAs in Arabidopsis

    PubMed Central

    Piya, Sarbottam; Shrestha, Sandesh K.; Binder, Brad; Stewart, C. Neal; Hewezi, Tarek

    2014-01-01

    The phytohormone auxin regulates nearly all aspects of plant growth and development. Based on the current model in Arabidopsis thaliana, Auxin/indole-3-acetic acid (Aux/IAA) proteins repress auxin-inducible genes by inhibiting auxin response transcription factors (ARFs). Experimental evidence suggests that heterodimerization between Aux/IAA and ARF proteins are related to their unique biological functions. The objective of this study was to generate the Aux/IAA-ARF protein-protein interaction map using full length sequences and locate the interacting protein pairs to specific gene co-expression networks in order to define tissue-specific responses of the Aux/IAA-ARF interactome. Pairwise interactions between 19 ARFs and 29 Aux/IAAs resulted in the identification of 213 specific interactions of which 79 interactions were previously unknown. The incorporation of co-expression profiles with protein-protein interaction data revealed a strong correlation of gene co-expression for 70% of the ARF-Aux/IAA interacting pairs in at least one tissue/organ, indicative of the biological significance of these interactions. Importantly, ARF4-8 and 19, which were found to interact with almost all Aux-Aux/IAA showed broad co-expression relationships with Aux/IAA genes, thus, formed the central hubs of the co-expression network. Our analyses provide new insights into the biological significance of ARF-Aux/IAA associations in the morphogenesis and development of various plant tissues and organs. PMID:25566309

  20. The Sec7 N-terminal regulatory domains facilitate membrane-proximal activation of the Arf1 GTPase

    PubMed Central

    Richardson, Brian C; Halaby, Steve L; Gustafson, Margaret A; Fromme, J Christopher

    2016-01-01

    The Golgi complex is the central sorting compartment of eukaryotic cells. Arf guanine nucleotide exchange factors (Arf-GEFs) regulate virtually all traffic through the Golgi by activating Arf GTPase trafficking pathways. The Golgi Arf-GEFs contain multiple autoregulatory domains, but the precise mechanisms underlying their function remain largely undefined. We report a crystal structure revealing that the N-terminal DCB and HUS regulatory domains of the Arf-GEF Sec7 form a single structural unit. We demonstrate that the established role of the N-terminal region in dimerization is not conserved; instead, a C-terminal autoinhibitory domain is responsible for dimerization of Sec7. We find that the DCB/HUS domain amplifies the ability of Sec7 to activate Arf1 on the membrane surface by facilitating membrane insertion of the Arf1 amphipathic helix. This enhancing function of the Sec7 N-terminal domains is consistent with the high rate of Arf1-dependent trafficking to the plasma membrane necessary for maximal cell growth. DOI: http://dx.doi.org/10.7554/eLife.12411.001 PMID:26765562

  1. Formation of Magnetic Anisotropy by Lithography

    PubMed Central

    Kim, Si Nyeon; Nam, Yoon Jae; Kim, Yang Doo; Choi, Jun Woo; Lee, Heon; Lim, Sang Ho

    2016-01-01

    Artificial interface anisotropy is demonstrated in alternating Co/Pt and Co/Pd stripe patterns, providing a means of forming magnetic anisotropy using lithography. In-plane hysteresis loops measured along two principal directions are explained in depth by two competing shape and interface anisotropies, thus confirming the formation of interface anisotropy at the Co/Pt and Co/Pd interfaces of the stripe patterns. The measured interface anisotropy energies, which are in the range of 0.2–0.3 erg/cm2 for both stripes, are smaller than those observed in conventional multilayers, indicating a decrease in smoothness of the interfaces when formed by lithography. The demonstration of interface anisotropy in the Co/Pt and Co/Pd stripe patterns is of significant practical importance, because this setup makes it possible to form anisotropy using lithography and to modulate its strength by controlling the pattern width. Furthermore, this makes it possible to form more complex interface anisotropy by fabricating two-dimensional patterns. These artificial anisotropies are expected to open up new device applications such as multilevel bits using in-plane magnetoresistive thin-film structures. PMID:27216420

  2. Deep-UV microsphere projection lithography.

    PubMed

    Bonakdar, Alireza; Rezaei, Mohsen; Brown, Robert L; Fathipour, Vala; Dexheimer, Eric; Jang, Sung Jun; Mohseni, Hooman

    2015-06-01

    In this Letter, we present a single-exposure deep-UV projection lithography at 254-nm wavelength that produces nanopatterns in a scalable area with a feature size of 80 nm. In this method, a macroscopic lens projects a pixelated optical mask on a monolayer of hexagonally arranged microspheres that reside on the Fourier plane and image the mask's pattern into a photoresist film. Our macroscopic lens shrinks the size of the mask by providing an imaging magnification of ∼1.86×10(4), while enhancing the exposure power. On the other hand, microsphere lens produces a sub-diffraction limit focal point-a so-called photonic nanojet-based on the near-surface focusing effect, which ensures an excellent patterning accuracy against the presence of surface roughness. Ray-optics simulation is utilized to design the bulk optics part of the lithography system, while a wave-optics simulation is implemented to simulate the optical properties of the exposed regions beneath the microspheres. We characterize the lithography performance in terms of the proximity effect, lens aberration, and interference effect due to refractive index mismatch between photoresist and substrate.

  3. Learning immersion without getting wet

    NASA Astrophysics Data System (ADS)

    Aguilera, Julieta C.

    2012-03-01

    This paper describes the teaching of an immersive environments class on the Spring of 2011. The class had students from undergraduate as well as graduate art related majors. Their digital background and interests were also diverse. These variables were channeled as different approaches throughout the semester. Class components included fundamentals of stereoscopic computer graphics to explore spatial depth, 3D modeling and skeleton animation to in turn explore presence, exposure to formats like a stereo projection wall and dome environments to compare field of view across devices, and finally, interaction and tracking to explore issues of embodiment. All these components were supported by theoretical readings discussed in class. Guest artists presented their work in Virtual Reality, Dome Environments and other immersive formats. Museum professionals also introduced students to space science visualizations, which utilize immersive formats. Here I present the assignments and their outcome, together with insights as to how the creation of immersive environments can be learned through constraints that expose students to situations of embodied cognition.

  4. Immersive Education, an Annotated Webliography

    ERIC Educational Resources Information Center

    Pricer, Wayne F.

    2011-01-01

    In this second installment of a two-part feature on immersive education a webliography will provide resources discussing the use of various types of computer simulations including: (a) augmented reality, (b) virtual reality programs, (c) gaming resources for teaching with technology, (d) virtual reality lab resources, (e) virtual reality standards…

  5. The Benefits of English Immersion.

    ERIC Educational Resources Information Center

    Porter, Rosalie Pedalino

    2000-01-01

    In 1998, California voters approved Initiative 227, requiring that all limited-English children be provided an English-immersion program for 1 year or longer as needed. Hispanic parents are leaders in the movement. Dire predictions that bilingual children in English-language classrooms would fall behind have not materialized. (Contains 18…

  6. The small GTPase ARF6 regulates protein trafficking to control cellular function during development and in disease.

    PubMed

    Grossmann, Allie H; Zhao, Helong; Jenkins, Noah; Zhu, Weiquan; Richards, Jackson R; Yoo, Jae Hyuk; Winter, Jacob M; Rich, Bianca; Mleynek, Tara M; Li, Dean Y; Odelberg, Shannon J

    2016-12-21

    The activation of the small GTPase ARF6 has been implicated in promoting several pathological processes related to vascular instability and tumor formation, growth, and metastasis. ARF6 also plays a vital role during embryonic development. Recent studies have suggested that ARF6 carries out these disparate functions primarily by controlling protein trafficking within the cell. ARF6 helps direct proteins to intracellular or extracellular locations where they function in normal cellular responses during development and in pathological processes later in life. This transport of proteins is accomplished through a variety of mechanisms, including endocytosis and recycling, microvesicle release, and as yet uncharacterized processes. This Commentary will explore the functions of ARF6, while focusing on the role of this small GTPase in development and postnatal physiology, regulating barrier function and diseases associated with its loss, and tumor formation, growth, and metastasis.

  7. AlFx affects the formation of focal complexes by stabilizing the Arf-GAP ASAP1 in a complex with Arf1.

    PubMed

    Klein, Stéphanie; Franco, Michel; Chardin, Pierre; Luton, Frédéric

    2005-10-24

    Aluminum fluoride (AlFx) is known to activate directly the alpha subunit of G-proteins but not the homologous small GTP-binding proteins. However, AlFx can stabilize complexes formed between Ras, RhoA or Cdc42 and their corresponding GTPase-activating proteins (GAPs). Here, we demonstrate that Arf1GDP can be converted into an active conformation by AlFx to form a complex with the Arf-GAP ASAP1 in vitro and in vivo. Within this complex ASAP1, which GAP activity is inoperative, can still alter the recruitment of paxillin to the focal complexes, thus indicating that ASAP1 interferes with focal complexes independently of its GAP activity.

  8. Overlay distortions in wafer-scale integration lithography

    NASA Astrophysics Data System (ADS)

    Flack, Warren W.

    1993-08-01

    Wafer scale integration (WSI) lithography is the technique used to fabricate ultra large scale integration (ULSI) integrated circuits significantly greater in size than current products. Applications for WSI lithography include large solid state detector arrays, large area liquid crystal displays, high speed mainframe supercomputers, and large random access memories. The lithography technology required to manufacture these devices is particularly challenging, requiring stringent control of both submicron critical dimensions and accurate alignment of level to level device patterns over large chip areas.

  9. Polymeric waveguide Bragg grating filter using soft lithography

    NASA Astrophysics Data System (ADS)

    Kocabas, Askin; Aydinli, Atilla

    2006-10-01

    We use the soft lithography technique to fabricate a polymeric waveguide Bragg grating filter. Master grating structure is patterned by e-beam lithography. Using an elastomeric stamp and capillary action, uniform grating structures with very thin residual layers are transferred to the UV curable polymer without the use of an imprint machine. The waveguide layer based on BCB optical polymer is fabricated by conventional optical lithography. This approach provides processing simplicity to fabricate Bragg grating filters.

  10. The Arf6 GTPase-activating Proteins ARAP2 and ACAP1 Define Distinct Endosomal Compartments That Regulate Integrin α5β1 Traffic*

    PubMed Central

    Chen, Pei-Wen; Luo, Ruibai; Jian, Xiaoying; Randazzo, Paul A.

    2014-01-01

    Arf6 and the Arf6 GTPase-activating protein (GAP) ACAP1 are established regulators of integrin traffic important to cell adhesion and migration. However, the function of Arf6 with ACAP1 cannot explain the range of Arf6 effects on integrin-based structures. We propose that Arf6 has different functions determined, in part, by the associated Arf GAP. We tested this idea by comparing the Arf6 GAPs ARAP2 and ACAP1. We found that ARAP2 and ACAP1 had opposing effects on apparent integrin β1 internalization. ARAP2 knockdown slowed, whereas ACAP1 knockdown accelerated, integrin β1 internalization. Integrin β1 association with adaptor protein containing a pleckstrin homology (PH) domain, phosphotyrosine-binding (PTB) domain, and leucine zipper motif (APPL)-positive endosomes and EEA1-positive endosomes was affected by ARAP2 knockdown and depended on ARAP2 GAP activity. ARAP2 formed a complex with APPL1 and colocalized with Arf6 and APPL in a compartment distinct from the Arf6/ACAP1 tubular recycling endosome. In addition, although ACAP1 and ARAP2 each colocalized with Arf6, they did not colocalize with each other and had opposing effects on focal adhesions (FAs). ARAP2 overexpression promoted large FAs, but ACAP1 overexpression reduced FAs. Taken together, the data support a model in which Arf6 has at least two sites of opposing action defined by distinct Arf6 GAPs. PMID:25225293

  11. Activation of Aplysia ARF6 induces neurite outgrowth and is sequestered by the overexpression of the PH domain of Aplysia Sec7 proteins.

    PubMed

    Jang, Deok-Jin; Jun, Yong-Woo; Shim, Jaehoon; Sim, Su-Eon; Lee, Jin-A; Lim, Chae-Seok; Kaang, Bong-Kiun

    2017-02-01

    ADP-ribosylation factors (ARFs) are small guanosine triphosphatases of the Ras superfamily involved in membrane trafficking and regulation of the actin cytoskeleton. Aplysia Sec7 protein (ApSec7), a guanine nucleotide exchange factor for ARF1 and ARF6, induces neurite outgrowth and plays a key role in 5-hydroxyltryptamine-induced neurite growth and synaptic facilitation in Aplysia sensory-motor synapses. However, the specific role of ARF6 signaling on neurite outgrowth in Aplysia neurons has not been examined. In the present study, we cloned Aplysia ARF6 (ApARF6) and revealed that an overexpression of enhanced green fluorescent protein (EGFP)-fused constitutively active ApARF6 (ApARF6-Q67L-EGFP) could induce neurite outgrowth in Aplysia sensory neurons. Further, we observed that ApARF6-induced neurite outgrowth was inhibited by the co-expression of a Sec7 activity-deficient mutant of ApSec7 (ApSec7-E159K). The pleckstrin homology domain of ApSec7 may bind to active ApARF6 at the plasma membrane and prevent active ApARF6-induced functions, including intracellular vacuole formation in HEK293T cells. The results of the present study suggest that activation of ARF6 signaling could induce neurite outgrowth in Aplysia neurons and may be involved in downstream signaling of ApSec7-induced neurite outgrowth in Aplysia neurons.

  12. ADP Ribosylation Factor 6 (ARF6) Promotes Acrosomal Exocytosis by Modulating Lipid Turnover and Rab3A Activation*

    PubMed Central

    Pelletán, Leonardo E.; Suhaiman, Laila; Vaquer, Cintia C.; Bustos, Matías A.; De Blas, Gerardo A.; Vitale, Nicolas; Mayorga, Luis S.; Belmonte, Silvia A.

    2015-01-01

    Regulated secretion is a central issue for the specific function of many cells; for instance, mammalian sperm acrosomal exocytosis is essential for egg fertilization. ARF6 (ADP-ribosylation factor 6) is a small GTPase implicated in exocytosis, but its downstream effectors remain elusive in this process. We combined biochemical, functional, and microscopy-based methods to show that ARF6 is present in human sperm, localizes to the acrosomal region, and is required for calcium and diacylglycerol-induced exocytosis. Results from pulldown assays show that ARF6 exchanges GDP for GTP in sperm challenged with different exocytic stimuli. Myristoylated and guanosine 5′-3-O-(thio)triphosphate (GTPγS)-loaded ARF6 (active form) added to permeabilized sperm induces acrosome exocytosis even in the absence of extracellular calcium. We explore the ARF6 signaling cascade that promotes secretion. We demonstrate that ARF6 stimulates a sperm phospholipase D activity to produce phosphatidic acid and boosts the synthesis of phosphatidylinositol 4,5-bisphosphate. We present direct evidence showing that active ARF6 increases phospholipase C activity, causing phosphatidylinositol 4,5-bisphosphate hydrolysis and inositol 1,4,5-trisphosphate-dependent intra-acrosomal calcium release. We show that active ARF6 increases the exchange of GDP for GTP on Rab3A, a prerequisite for secretion. We propose that exocytic stimuli activate ARF6, which is required for acrosomal calcium efflux and the assembly of the membrane fusion machinery. This report highlights the physiological importance of ARF6 as a key factor for human sperm exocytosis and fertilization. PMID:25713146

  13. Polarization manipulation in single refractive prism based holography lithography

    NASA Astrophysics Data System (ADS)

    Xiong, Wenjie; Xu, Yi; Xiao, Yujian; Lv, Xiaoxu; Wu, Lijun

    2015-01-01

    We propose theoretically and demonstrate experimentally a simple but effective strategy for polarization manipulation in single refractive prism based holographic lithography. By tuning the polarization of a single laser beam, we can obtain the pill shape interference pattern with a high-contrast where a complex optical setup and multiple polarizers are needed in the conventional holography lithography. Fabrication of pill shape two-dimensional polymer photonic crystals using one beam and one shoot holography lithography is shown as an example to support our theoretical results. This integrated polarization manipulation technique can release the crucial stability restrictions imposed on the multiple beams holography lithography.

  14. 75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-27

    ... COMMISSION Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing... importation of certain semiconductor products made by advanced lithography techniques and products containing... certain semiconductor products made by advanced lithography techniques or products containing same...

  15. Hybrid immersed interface-immersed boundary methods for AC dielectrophoresis

    SciTech Connect

    Hossan, Mohammad Robiul; Dillon, Robert; Dutta, Prashanta

    2014-08-01

    Dielectrophoresis, a nonlinear electrokinetic transport mechanism, has become popular in many engineering applications including manipulation, characterization and actuation of biomaterials, particles and biological cells. In this paper, we present a hybrid immersed interface–immersed boundary method to study AC dielectrophoresis where an algorithm is developed to solve the complex Poisson equation using a real variable formulation. An immersed interface method is employed to obtain the AC electric field in a fluid media with suspended particles and an immersed boundary method is used for the fluid equations and particle transport. The convergence of the proposed algorithm as well as validation of the hybrid scheme with experimental results is presented. In this paper, the Maxwell stress tensor is used to calculate the dielectrophoretic force acting on particles by considering the physical effect of particles in the computational domain. Thus, this study eliminates the approximations used in point dipole methods for calculating dielectrophoretic force. A comparative study between Maxwell stress tensor and point dipole methods for computing dielectrophoretic forces are presented. The hybrid method is used to investigate the physics of dielectrophoresis in microfluidic devices using an AC electric field. The numerical results show that with proper design and appropriate selection of applied potential and frequency, global electric field minima can be obtained to facilitate multiple particle trapping by exploiting the mechanism of negative dielectrophoresis. Our numerical results also show that electrically neutral particles form a chain parallel to the applied electric field irrespective of their initial orientation when an AC electric field is applied. This proposed hybrid numerical scheme will help to better understand dielectrophoresis and to design and optimize microfluidic devices.

  16. 3-D patterning of silicon by laser-initiated, liquid-assisted colloidal (LILAC) lithography.

    PubMed

    Ulmeanu, M; Grubb, M P; Jipa, F; Quignon, B; Ashfold, M N R

    2015-06-01

    We report a comprehensive study of laser-initiated, liquid-assisted colloidal (LILAC) lithography, and illustrate its utility in patterning silicon substrates. The method combines single shot laser irradiation (frequency doubled Ti-sapphire laser, 50fs pulse duration, 400nm wavelength) and medium-tuned optical near-field effects around arrays of silica colloidal particles to achieve 3-D surface patterning of silicon. A monolayer (or multilayers) of hexagonal close packed silica colloidal particles act as a mask and offer a route to liquid-tuned optical near field enhancement effects. The resulting patterns are shown to depend on the difference in refractive index of the colloidal particles (ncolloid) and the liquid (nliquid) in which they are immersed. Two different topographies are demonstrated experimentally: (a) arrays of bumps, centred beneath the original colloidal particles, when using liquids with nliquidncolloid - and explained with the aid of complementary Mie scattering simulations. The LILAC lithography technique has potential for rapid, large area, organized 3-D patterning of silicon (and related) substrates.

  17. Dual-layer dye-filled developer-soluble BARCs for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Meador, James D.; Beaman, Carol; Stroud, Charlyn; Lowes, Joyce A.; Zhu, Zhimin; Guerrero, Douglas J.; Mercado, Ramil-Marcelo L.; Drain, David

    2008-03-01

    A family of dye-filled developer-soluble bottom anti-reflective coatings (BARCs) has been developed for use in 193-nm microlithography. This new dye-filled chemical platform easily provides products covering a wide range of optical properties. The light-sensitive and positive-working BARCs use a transparent polymeric binder and a polymeric dye in a thermally crosslinking formulation, with the cured products then being photochemically decrosslinked prior to development. The cured BARC films are imaged and removed with developer in the same steps as the covering photoresist. Two dye-filled BARCs with differing optical properties were developed via a series of DOEs and then used as a dual-layer BARC stack. Lithography with this BARC stack, using a 193-nm resist, gave 150-nm L/S (1:1). A 193-nm dual-layer BARC stack (gradient optical properties) from the well-established dye-attached family of light-sensitive BARCs also gave 150-nm L/S (1:1) with the same resist. However, the latter provided much improved line shape with no scumming. The targeted application for light-sensitive dual-layer BARCs is high-numerical aperture (NA) immersion lithography where a single-layer BARC will not afford the requisite reflection control.

  18. Methodology for determining CD-SEM measurement condition of sub-20nm resist patterns for 0.33NA EUV lithography

    NASA Astrophysics Data System (ADS)

    Okai, Nobuhiro; Lavigne, Erin; Hitomi, Keiichiro; Halle, Scott; Hotta, Shoji; Koshihara, Shunsuke; Tanaka, Junichi; Bailey, Todd

    2015-03-01

    A novel methodology was established for determining critical dimension scanning electron microscope (CD-SEM) optimum measurement condition of sub-20 nm resist patterns for 0.33NA EUV lithography yielding both small shrinkage and high precision. To investigate dependency of resist shrinkage on pattern size and electron beam irradiation condition, shrinkage of 18, 32, and 45 nm EUV resist patterns was measured over a wide range of beam conditions. A shrinkage trend similar to that of ArF resist patterns was observed for 32 and 45 nm, but 18 nm pattern showed a different dependence on acceleration voltage. Conventional methodology developed for ArF resist pattern to predict shrinkage and precision using the Taguchi method was applied to EUV resist pattern to examine the extendibility of the method. Predicted shrinkage by Taguchi method for 32 and 45 nm patterns agreed with measurements. However, the prediction error increases considerably as the pattern size decreases from 32 to 18 nm because there is a significant interaction between acceleration voltage and irradiated electron dose in L18 array used in the Taguchi method. Thus, we proposed a new method that consists of separated prediction procedures of shrinkage and precision using both a shrinkage curve and the Taguchi method, respectively. The new method was applied to 18 nm EUV resist pattern, and the optimum measurement condition with shrinkage of 1.5 nm and precision of 0.12 nm was determined. Our new method is a versatile technique which is applicable not only to fine EUV resist pattern but also to ArF resist pattern.

  19. Structure of the Sec7 domain of the Arf exchange factor ARNO.

    PubMed

    Cherfils, J; Ménétrey, J; Mathieu, M; Le Bras, G; Robineau, S; Béraud-Dufour, S; Antonny, B; Chardin, P

    1998-03-05

    Small G proteins switch from a resting, GDP-bound state to an active, GTP-bound state. As spontaneous GDP release is slow, guanine-nucleotide-exchange factors (GEFs) are required to promote fast activation of small G proteins through replacement of GDP with GTP in vivo. Families of GEFs with no sequence similarity to other GEF families have now been assigned to most families of small G proteins. In the case of the small G protein Arf1, the exchange of bound GDP for GTP promotes the coating of secretory vesicles in Golgi traffic. An exchange factor for human Arf1, ARNO, and two closely related proteins, named cytohesin 1 and GPS1, have been identified. These three proteins are modular proteins with an amino-terminal coiled-coil, a central Sec7-like domain and a carboxy-terminal pleckstrin homology domain. The Sec7 domain contains the exchange-factor activity. It was first found in Sec7, a yeast protein involved in secretion, and is present in several other proteins, including the yeast exchange factors for Arf, Geal and Gea2. Here we report the crystal structure of the Sec7 domain of human ARNO at 2 A resolution and the identification of the site of interaction of ARNO with Arf.

  20. Rab, Arf, and Arl-Regulated Membrane Traffic in Cortical Neuron Migration.

    PubMed

    Tang, Bor Luen

    2016-07-01

    The migration of projection neurons from its birthplace in the subventricular zone to their final destination in the cortical plate is a complex process that requires a series of highly coordinated cellular events. Amongst the key factors involved in the processes are modulators of cytoskeletal dynamics, as well as cellular membrane traffic. Members of the small GTPases family responsible for the latter process, the Rabs and Arfs, have been recently implicated in cortical neuron migration. Rab5 and Rab11, which are key modulators of endocytosis and endocytic recycling respectively, ensure proper surface expression and distribution of N-cadherin, a key adhesion protein that tethers migrating neurons to the radial glia fiber tracts during pia-directed migration. Rab7, which is associated with lysosomal biogenesis and function, is important for the final step of terminal translocation when N-cadherin is downregulated by lysosomal degradation. Arf6 activity, which is known to be important in neuronal processes outgrowth, may negatively impact the multipolar-bipolar transition of cortical neurons undergoing radial migration, but the downstream effector of Arf6 in this regard is not yet known. In addition to the above, members of the Arl family which have been recently shown to be important in radial glia scaffold formation, would also be important for cortical neuron migration. In this short review, we discuss recent advances in our understanding of the importance of membrane traffic regulated by the Rab, Arf, and Arl family members in cortical neuron migration.

  1. HIV-1 Nef hijacks clathrin coats by stabilizing AP-1:Arf1 polygons.

    PubMed

    Shen, Qing-Tao; Ren, Xuefeng; Zhang, Rui; Lee, Il-Hyung; Hurley, James H

    2015-10-23

    The lentiviruses HIV and simian immunodeficiency virus (SIV) subvert intracellular membrane traffic as part of their replication cycle. The lentiviral Nef protein helps viruses evade innate and adaptive immune defenses by hijacking the adaptor protein 1 (AP-1) and AP-2 clathrin adaptors. We found that HIV-1 Nef and the guanosine triphosphatase Arf1 induced trimerization and activation of AP-1. Here we report the cryo-electron microscopy structures of the Nef- and Arf1-bound AP-1 trimer in the active and inactive states. A central nucleus of three Arf1 molecules organizes the trimers. We combined the open trimer with a known dimer structure and thus predicted a hexagonal assembly with inner and outer faces that bind the membranes and clathrin, respectively. Hexagons were directly visualized and the model validated by reconstituting clathrin cage assembly. Arf1 and Nef thus play interconnected roles in allosteric activation, cargo recruitment, and coat assembly, revealing an unexpectedly intricate organization of the inner AP-1 layer of the clathrin coat.

  2. Immersive Environments - A Connectivist Approach

    NASA Astrophysics Data System (ADS)

    Loureiro, Ana; Bettencourt, Teresa

    We are conducting a research project with the aim of achieving better and more efficient ways to facilitate teaching and learning in Higher Level Education. We have chosen virtual environments, with particular emphasis to Second Life® platform augmented by web 2.0 tools, to develop the study. The Second Life® environment has some interesting characteristics that captured our attention, it is immersive; it is a real world simulator; it is a social network; it allows real time communication, cooperation, collaboration and interaction; it is a safe and controlled environment. We specifically chose tools from web 2.0 that enable sharing and collaborative way of learning. Through understanding the characteristics of this learning environment, we believe that immersive learning along with other virtual tools can be integrated in today's pedagogical practices.

  3. Immersible solar heater for fluids

    DOEpatents

    Kronberg, J.W.

    1995-07-11

    An immersible solar heater is described comprising a light-absorbing panel attached to a frame for absorbing heat energy from the light and transferring the absorbed heat energy directly to the fluid in which the heater is immersed. The heater can be used to heat a swimming pool, for example, and is held in position and at a preselected angle by a system of floats, weights and tethers so that the panel can operate efficiently. A skid can be used in one embodiment to prevent lateral movement of the heater along the bottom of the pool. Alternative embodiments include different arrangements of the weights, floats and tethers and methods for making the heater. 11 figs.

  4. Immersible solar heater for fluids

    DOEpatents

    Hazen, T.C.; Fliermans, C.B.

    1994-01-01

    An immersible solar heater is described comprising a light-absorbing panel attached to a frame for absorbing heat energy from the light and transferring the absorbed heat energy directly to the fluid in which the heater is immersed. The heater can be used to heat a swimming pool, for example, and is held in position and at a preselected angle by a system of floats, weights and tethers so that the panel can operate efficiently. A skid can be used in one embodiment to prevent lateral movement of the heater along the bottom of the pool. Alternative embodiments include different arrangements of the weights, floats and tethers and methods for making the heater.

  5. High Efficiency Germanium Immersion Gratings

    SciTech Connect

    Kuzmenko, P J; Davis, P J; Little, S L; Little, L M; Bixler, J V

    2006-05-01

    We have fabricated several germanium immersion gratings by single crystal, single point diamond flycutting on an ultra-precision lathe. Use of a dead sharp tool produces groove corners less than 0.1 micron in radius and consequently high diffraction efficiency. We measured first order efficiencies in immersion of over 80% at 10.6 micron wavelength. Wavefront error was low averaging 0.06 wave rms (at 633 nm) across the full aperture. The grating spectral response was free of ghosts down to our detection limit of 1 part in 10{sup 4}. Scatter should be low based upon the surface roughness. Measurement of the spectral line profile of a CO{sub 2} laser sets an upper bound on total integrated scatter of 0.5%.

  6. Which Way In? The RalF Arf-GEF Orchestrates Rickettsia Host Cell Invasion

    PubMed Central

    Rennoll-Bankert, Kristen E.; Rahman, M. Sayeedur; Gillespie, Joseph J.; Guillotte, Mark L.; Kaur, Simran J.; Lehman, Stephanie S.; Beier-Sexton, Magda; Azad, Abdu F.

    2015-01-01

    Bacterial Sec7-domain-containing proteins (RalF) are known only from species of Legionella and Rickettsia, which have facultative and obligate intracellular lifestyles, respectively. L. pneumophila RalF, a type IV secretion system (T4SS) effector, is a guanine nucleotide exchange factor (GEF) of ADP-ribosylation factors (Arfs), activating and recruiting host Arf1 to the Legionella-containing vacuole. In contrast, previous in vitro studies showed R. prowazekii (Typhus Group) RalF is a functional Arf-GEF that localizes to the host plasma membrane and interacts with the actin cytoskeleton via a unique C-terminal domain. As RalF is differentially encoded across Rickettsia species (e.g., pseudogenized in all Spotted Fever Group species), it may function in lineage-specific biology and pathogenicity. Herein, we demonstrate RalF of R. typhi (Typhus Group) interacts with the Rickettsia T4SS coupling protein (RvhD4) via its proximal C-terminal sequence. RalF is expressed early during infection, with its inactivation via antibody blocking significantly reducing R. typhi host cell invasion. For R. typhi and R. felis (Transitional Group), RalF ectopic expression revealed subcellular localization with the host plasma membrane and actin cytoskeleton. Remarkably, R. bellii (Ancestral Group) RalF showed perinuclear localization reminiscent of ectopically expressed Legionella RalF, for which it shares several structural features. For R. typhi, RalF co-localization with Arf6 and PI(4,5)P2 at entry foci on the host plasma membrane was determined to be critical for invasion. Thus, we propose recruitment of PI(4,5)P2 at entry foci, mediated by RalF activation of Arf6, initiates actin remodeling and ultimately facilitates bacterial invasion. Collectively, our characterization of RalF as an invasin suggests that, despite carrying a similar Arf-GEF unknown from other bacteria, different intracellular lifestyles across Rickettsia and Legionella species have driven divergent roles for Ral

  7. Fabrication of metallic nanowires and nanoribbons using laser interference lithography and shadow lithography

    SciTech Connect

    Park, Joong- Mok; Nalwa, Kanwar Singh; Leung, Wai; Constant, Kristen; Chaudhary, Sumit; Ho, Kai-Ming

    2010-04-30

    Ordered and free-standing metallic nanowires were fabricated by e-beam deposition on patterned polymer templates made by interference lithography. The dimensions of the nanowires can be controlled through adjustment of deposition conditions and polymer templates. Grain size, polarized optical transmission and electrical resistivity were measured with ordered and free-standing nanowires.

  8. Repression of ARF10 by microRNA160 plays an important role in the mediation of leaf water loss.

    PubMed

    Liu, Xin; Dong, Xiufen; Liu, Zihan; Shi, Zihang; Jiang, Yun; Qi, Mingfang; Xu, Tao; Li, Tianlai

    2016-10-01

    Solanum lycopersicum auxin response factor 10 (SlARF10) is post-transcriptionally regulated by Sl-miR160. Overexpression of a Sl-miR160-resistant SlARF10 (mSlARF10) resulted in narrower leaflet blades with larger stomata but lower densities. 35S:mSlARF10-6 plants with narrower excised leaves had greater water loss, which was in contrast to the wild type (WT). Further analysis revealed that the actual water loss was not consistent with the calculated stomatal water loss in 35S:mSlARF10-6 and the WT under the dehydration treatment, indicating that there is a difference in hydraulic conductance. Pretreatment with abscisic acid (ABA) and HgCl2 confirmed higher hydraulic conductance in 35S:mSlARF10, which is related to the larger stomatal size and higher activity of aquaporins (AQPs). Under ABA treatment, 35S:mSlARF10-6 showed greater sensitivity, and the stomata closed rapidly. Screening by RNA sequencing revealed that five AQP-related genes, fourteen ABA biosynthesis/signal genes and three stomatal development genes were significantly altered in 35S:mSlARF10-6 plants, and this result was verified by qRT-PCR. The promoter analysis showed that upregulated AQPs contain AuxRE and ABRE, implying that these elements may be responsible for the high expression levels of AQPs in 35S:mSlARF10-6. The three most upregulated AQPs (SlTIP1-1-like, SlPIP2;4 and SlNIP-type-like) were chosen to confirm AuxRE and ABRE function. Promoters transient expression demonstrated that the SlPIP2;4 and SlNIP-type-like AuxREs and SlPIP2;4 and SlTIP1-1-like ABREs could significantly enhance the expression of the GUS reporter in 35S:mSlARF10-6, confirming that AuxRE and ABRE may be the main factors inducing the expression of AQPs. Additionally, two upregulated transcription factors in 35S:mSlARF10-6, SlARF10 and SlABI5-like were shown to directly bind to those elements in an electromobility shift assay and a yeast one-hybrid assay. Furthermore, transient expression of down-regulated ARF10 or up

  9. Internal state manipulation for neutral atom lithography

    NASA Astrophysics Data System (ADS)

    Thywissen, Joseph Hermann

    2000-11-01

    We examine how the manipulation of the internal states of atoms can be used for atom lithography. Metastable argon atoms pattern a substrate by activating the growth of a carbonaceous material on the surface. We develop resist/etch systems that support 20 nm feature sizes, 2:1 aspect ratios, and 103 feature height amplification. Gold, silver, silicon, silicon dioxide, and silicon nitride substrates are patterned. Standing wave quenching (SWQ) light masks are used to create 65nm- wide features spaced 401 nm apart. One application of SWQ is to create a length reference artifact. We present a detailed error budget for the pattern periodicity, and find that an accuracy of better than one part in 106 is possible. We demonstrate atom resonance lithography (ARL), the first use of frequency encoding of spatial information for atom lithography. ARL has the potential to create patterns in two dimensions whose feature size is smaller than 20 nm and whose spacing is not limited by the wavelength of the patterning light. We form features in silicon that are 2.2 μm wide and spaced 20 μm apart. Using multiple probe frequencies, we demonstrate that multiple features can be created over the area covered by a monotonic gradient. The appendices include original contributions to the theory of manipulating atoms using micro- electromagnets. We propose several ways to create a magnetic waveguide using microfabricated wire patterns on a surface. We also discuss several implications of tight confinement: single mode atom guides, elongated traps with quasi-one-dimensional energetics, and constrictions whose conductance is quantized.

  10. EUV lithography imaging using novel pellicle membranes

    NASA Astrophysics Data System (ADS)

    Pollentier, Ivan; Vanpaemel, Johannes; Lee, Jae Uk; Adelmann, Christoph; Zahedmanesh, Houman; Huyghebaert, Cedric; Gallagher, Emily E.

    2016-03-01

    EUV mask protection against defects during use remains a challenge for EUV lithography. A stand-off protective membrane - a pellicle - is targeted to prevent yield losses in high volume manufacturing during handling and exposure, just as it is for 193nm lithography. The pellicle is thin enough to transmit EUV exposure light, yet strong enough to remain intact and hold any particles out of focus during exposure. The development of pellicles for EUV is much more challenging than for 193nm lithography for multiple reasons including: high absorption of most materials at EUV wavelength, pump-down sequences in the EUV vacuum system, and exposure to high intensity EUV light. To solve the problems of transmission and film durability, various options have been explored. In most cases a thin core film is considered, since the deposition process for this is well established and because it is the simplest option. The transmission specification typically dictates that membranes are very thin (~50nm or less), which makes both fabrication and film mechanical integrity difficult. As an alternative, low density films (e.g. including porosity) will allow thicker membranes for a given transmission specification, which is likely to improve film durability. The risk is that the porosity could influence the imaging. At imec, two cases of pellicle concepts based on reducing density have been assessed : (1) 3D-patterned SiN by directed self-assembly (DSA), and (2) carbon nanomaterials such as carbon nanotubes (CNT) and carbon nanosheets (CNS). The first case is based on SiN membranes that are 3D-patterned by Directed Self Assembly (DSA). The materials are tested relative to the primary specifications: EUV transmission and film durability. A risk assessment of printing performance is provided based on simulations of scattered energy. General conclusions on the efficacy of various approaches will provided.

  11. High frequency of p53/MDM2/p14ARF pathway abnormalities in relapsed neuroblastoma

    PubMed Central

    Carr-Wilkinson, Jane; O' Toole, Kieran; Wood, Katrina M.; Challen, Christine C.; Baker, Angela G.; Board, Julian R.; Evans, Laura; Cole, Michael; Cheung, Nai-Kong V.; Boos, Joachim; Köhler, Gabriele; Leuschner, Ivo; Pearson, Andrew D.J.; Lunec, John; Tweddle, Deborah A.

    2010-01-01

    Purpose: Most neuroblastomas initially respond to therapy but many relapse with chemoresistant disease. p53 mutations are rare in diagnostic neuroblastomas, but we have previously reported inactivation of the p53/MDM2/p14ARF pathway in 9/17 (53%) neuroblastoma cell lines established at relapse. Hypothesis: Inactivation of the p53/MDM2/p14ARF pathway develops during treatment and contributes to neuroblastoma relapse. Methods: Eighty-four neuroblastomas were studied from 41 patients with relapsed neuroblastoma including 38 paired neuroblastomas at different stages of therapy. p53 mutations were detected by automated sequencing, p14ARF methylation and deletion by methylation-specific PCR and duplex PCR respectively, and MDM2 amplification by fluorescent in-situ hybridisation. Results: Abnormalities in the p53 pathway were identified in 20/41(49%) cases. Downstream defects due to inactivating missense p53 mutations were identified in 6/41 (15%) cases, 5 following chemotherapy and/or at relapse and 1 at diagnosis, post chemotherapy and relapse. The presence of a p53 mutation was independently prognostic for overall survival (hazard ratio 3.4, 95% confidence interval 1.2, 9.9; p = 0.02). Upstream defects were present in 35% cases: MDM2 amplification in 3 cases, all at diagnosis & relapse and p14ARF inactivation in 12/41 (29%) cases: 3 had p14ARF methylation, 2 after chemotherapy, and 9 had homozygous deletions, 8 at diagnosis and relapse. Conclusions: These results show that a high proportion of neuroblastomas which relapse have an abnormality in the p53 pathway. The majority have upstream defects suggesting that agents which reactivate wild-type p53 would be beneficial, in contrast to those with downstream defects where p53 independent therapies are indicated. PMID:20145180

  12. Interaction of FAPP1 with ARF1 and PI4P at a membrane surface: an example of coincidence detection

    PubMed Central

    Liu, Yizhou; Kahn, Richard A.; Prestegard, James H.

    2014-01-01

    SUMMARY Interactions among ADP-ribosylation factors (ARFs), various adaptor proteins, and membrane lipids are essential for intracellular vesicle transport of a variety of cellular materials. Here we present NMR-based information on the nature of the interaction of yeast ARF1 (yARF1) and the pleckstrin homology (PH) domain of four-phosphate-adaptor protein 1 (FAPP1) as it occurs at a model membrane surface. Interactions favor a model in which FAPP1 is partially embedded in the membrane and interacts with a membrane-associated ARF1 molecule primarily through contacts between residues in switch I of ARF1 and regions near and under the solution exposed C-terminal extension of the PH domain. The ARF1 binding site on FAPP1-PH is distinct from a positively charged phosphatidylinositol-4-phosphate (PI4P) binding site. A structural model is constructed that supports coincidence detection of both activated ARF and PI4P as a mechanism facilitating FAPP1 recruitment to membranes. PMID:24462251

  13. Activation-Inactivation Cycling of Rab35 and ARF6 Is Required for Phagocytosis of Zymosan in RAW264 Macrophages

    PubMed Central

    Egami, Youhei; Fujii, Makoto; Kawai, Katsuhisa; Ishikawa, Yurie; Fukuda, Mitsunori; Araki, Nobukazu

    2015-01-01

    Phagocytosis of zymosan by phagocytes is a widely used model of microbial recognition by the innate immune system. Live-cell imaging showed that fluorescent protein-fused Rab35 accumulated in the membranes of phagocytic cups and then dissociated from the membranes of newly formed phagosomes. By our novel pull-down assay for Rab35 activity, we found that Rab35 is deactivated immediately after zymosan internalization into the cells. Phagosome formation was inhibited in cells expressing the GDP- or GTP-locked Rab35 mutant. Moreover, the simultaneous expression of ACAP2—a Rab35 effector protein—with GTP-locked Rab35 or the expression of plasma membrane-targeted ACAP2 showed a marked inhibitory effect on phagocytosis through ARF6 inactivation by the GAP activity of ACAP2. ARF6, a substrate for ACAP2, was also localized on the phagocytic cups and dissociated from the membranes of internalized phagosomes. In support of the microscopic observations, ARF6-GTP pull-down experiments showed that ARF6 is transiently activated during phagosome formation. Furthermore, the expression of GDP- or GTP-locked ARF6 mutants also suppresses the uptake of zymosan. These data suggest that the activation-inactivation cycles of Rab35 and ARF6 are required for the uptake of zymosan and that ACAP2 is an important component that links Rab35/ARF6 signaling during phagocytosis of zymosan. PMID:26229970

  14. Rapid asymmetric evolution of a dual-coding tumor suppressor INK4a/ARF locus contradicts its function

    PubMed Central

    Szklarczyk, Radek; Heringa, Jaap; Pond, Sergei Kosakovsky; Nekrutenko, Anton

    2007-01-01

    INK4a/ARF tumor suppressor locus encodes two protein products, INK4a and ARF, essential for controlling tumorigenesis and mutated in more than half of human cancers. There is no resemblance between the two proteins: their coding regions are assembled by alternative splicing of two mutually exclusive 5′ exons into a constitutive one containing overlapping out-of-phase reading frames. We show that the dual-coding arrangement conflicts with the high cost of mutations within INK4a/ARF. Unexpectedly, the locus evolves rapidly and asymmetrically, with ARF accumulating the majority of amino acid replacements. Rapid evolution drives both INK4a and ARF proteins out of sync with other members of the RB and p53 tumor suppressor pathways, both of which are controlled by the locus. Yet, the asymmetric behavior may be an intrinsic property of dual-coding exons: INK4a/ARF closely mimics the evolution of 90 newly identified genes with similar dual-coding structure. Thus, the strong link between mutations in INK4a/ARF and cancer may be a direct consequence of the architecture of the locus. PMID:17652172

  15. Germline mutations of the INK4a-ARF gene in patients with suspected genetic predisposition to melanoma.

    PubMed

    Soufir, N; Lacapere, J J; Bertrand, G; Matichard, E; Meziani, R; Mirebeau, D; Descamps, V; Gérard, B; Archimbaud, A; Ollivaud, L; Bouscarat, F; Baccard, M; Lanternier, G; Saïag, P; Lebbé, C; Basset-Seguin, N; Crickx, B; Cave, H; Grandchamp, B

    2004-01-26

    Germline anomalies of the INK4a-ARF and Cdk4 genes were sought in a series of 89 patients suspected of having a genetic predisposition to melanoma. Patients were selected based on the following criteria: (a) familial melanoma (23 cases), (b) multiple primary melanoma (MPM; 18 cases), (c) melanoma and additional unrelated cancers (13 cases), (d) age at diagnosis less than 25 years (21 cases), and (e) nonphoto-induced melanoma (NPIM; 14 cases). Mutations of INK4a-ARF and Cdk4 were characterised by automated sequencing, and germline deletions of INK4a-ARF were also examined by real-time quantitative PCR. Seven germline changes of INK4a-ARF, five of which were novel, were found in seven patients (8%). Four were very likely to be pathogenic mutations and were found in three high-risk melanoma families and in a patient who had a pancreatic carcinoma in addition to melanoma. Three variants of uncertain significance were detected in one MPM patient, one patient <25 years, and one NPIM patient. No germline deletion of INK4a-ARF was found in 71 patients, and no Cdk4 mutation was observed in the 89 patients. This study confirms that INK4a-ARF mutations are infrequent outside stringent familial criteria, and that germline INK4a-ARF deletions are rarely involved in genetic predisposition to melanoma.

  16. Auxin Response Factor2 (ARF2) and Its Regulated Homeodomain Gene HB33 Mediate Abscisic Acid Response in Arabidopsis

    PubMed Central

    Wang, Li; Hua, Deping; He, Junna; Duan, Ying; Chen, Zhizhong; Hong, Xuhui; Gong, Zhizhong

    2011-01-01

    The phytohormone abscisic acid (ABA) is an important regulator of plant development and response to environmental stresses. In this study, we identified two ABA overly sensitive mutant alleles in a gene encoding Auxin Response Factor2 (ARF2). The expression of ARF2 was induced by ABA treatment. The arf2 mutants showed enhanced ABA sensitivity in seed germination and primary root growth. In contrast, the primary root growth and seed germination of transgenic plants over-expressing ARF2 are less inhibited by ABA than that of the wild type. ARF2 negatively regulates the expression of a homeodomain gene HB33, the expression of which is reduced by ABA. Transgenic plants over-expressing HB33 are more sensitive, while transgenic plants reducing HB33 by RNAi are more resistant to ABA in the seed germination and primary root growth than the wild type. ABA treatment altered auxin distribution in the primary root tips and made the relative, but not absolute, auxin accumulation or auxin signal around quiescent centre cells and their surrounding columella stem cells to other cells stronger in arf2-101 than in the wild type. These results indicate that ARF2 and HB33 are novel regulators in the ABA signal pathway, which has crosstalk with auxin signal pathway in regulating plant growth. PMID:21779177

  17. A novel proapoptotic gene PANO encodes a post-translational modulator of the tumor suppressor p14ARF

    SciTech Connect

    Watari, Akihiro; Li, Yang; Higashiyama, Shinji; Yutsudo, Masuo

    2012-02-01

    The protein p14ARF is a known tumor suppressor protein controlling cell proliferation and survival, which mainly localizes in nucleoli. However, the regulatory mechanisms that govern its activity or expression remain unclear. Here, we report that a novel proapoptotic nucleolar protein, PANO, modulates the expression and activity of p14ARF in HeLa cells. Overexpression of PANO enhances the stability of p14ARF protein by protecting it from degradation, resulting in an increase in p14ARF expression levels. Overexpression of PANO also induces apoptosis under low serum conditions. This effect is dependent on the nucleolar localization of PANO and inhibited by knocking-down p14ARF. Alternatively, PANO siRNA treated cells exhibit a reduction in p14ARF protein levels. In addition, ectopic expression of PANO suppresses the tumorigenicity of HeLa cells in nude mice. These results indicate that PANO is a new apoptosis-inducing gene by modulating the tumor suppressor protein, p14ARF, and may itself be a new candidate tumor suppressor gene.

  18. Plasma formed ion beam projection lithography system

    DOEpatents

    Leung, Ka-Ngo; Lee, Yung-Hee Yvette; Ngo, Vinh; Zahir, Nastaran

    2002-01-01

    A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

  19. Directly patterned inorganic hardmask for EUV lithography

    NASA Astrophysics Data System (ADS)

    Stowers, Jason K.; Telecky, Alan; Kocsis, Michael; Clark, Benjamin L.; Keszler, Douglas A.; Grenville, Andrew; Anderson, Chris N.; Naulleau, Patrick P.

    2011-04-01

    This paper describes a metal oxide patternable hardmask designed for EUV lithography. The material has imaged 15-nm half-pitch by projection EUV exposure on the SEMATECH Berkeley MET, and 12-nm half-pitch by electron beam exposure. The platform is highly absorbing (16 μm-1) and etch resistant (>100:1 for silicon). These properties enable resist film thickness to be reduced to 20nm, thereby reducing aspect ratio and susceptibility to pattern collapse. New materials and processes show a path to improved photospeed. This paper also presents data for on coating uniformity, metal-impurity content, outgassing, pattern transfer, and resist strip.

  20. Metallic nanowires by full wafer stencil lithography.

    PubMed

    Vazquez-Mena, O; Villanueva, G; Savu, V; Sidler, K; van den Boogaart, M A F; Brugger, J

    2008-11-01

    Aluminum and gold nanowires were fabricated using 100 mm stencil wafers containing nanoslits fabricated with a focused ion beam. The stencils were aligned and the nanowires deposited on a substrate with predefined electrical pads. The morphology and resistivity of the wires were studied. Nanowires down to 70 nm wide and 5 mum long have been achieved showing a resistivity of 10 microOmegacm for Al and 5 microOmegacm for Au and maximum current density of approximately 10(8) A/cm(2). This proves the capability of stencil lithography for the fabrication of metallic nanowires on a full wafer scale.

  1. Wave and Particle in Molecular Interference Lithography

    SciTech Connect

    Juffmann, Thomas; Truppe, Stefan; Geyer, Philipp; Major, Andras G.; Arndt, Markus; Deachapunya, Sarayut; Ulbricht, Hendrik

    2009-12-31

    The wave-particle duality of massive objects is a cornerstone of quantum physics and a key property of many modern tools such as electron microscopy, neutron diffraction or atom interferometry. Here we report on the first experimental demonstration of quantum interference lithography with complex molecules. Molecular matter-wave interference patterns are deposited onto a reconstructed Si(111) 7x7 surface and imaged using scanning tunneling microscopy. Thereby both the particle and the quantum wave character of the molecules can be visualized in one and the same image. This new approach to nanolithography therefore also represents a sensitive new detection scheme for quantum interference experiments.

  2. Highly absorbing ARC for DUV lithography

    NASA Astrophysics Data System (ADS)

    Pavelchek, Edward K.; Meador, James D.; Guerrero, Douglas J.; Lamb, James E., III; Kache, Ajit; doCanto, Manuel; Adams, Timothy G.; Stark, David R.; Miller, Daniel A.

    1996-06-01

    The properties of a new anti-reflective coating for 248 nm lithography are described. It is formed by thermally cross-linking a spin-on organic coating, and has an absorbance greater than 12/micrometers. It is compatible with UVIIHS and APEX-E photoresists. Thin films (less than 600 angstrom over silicon substrates) are found to completely suppress standing waves, to reduce EO swing curves to less than 3%, and to offer good CD control over typical field oxide topography. The etch rate was found to be comparable to that of the APEX-E photoresist.

  3. Lithography-Free Microchannel Fabrication in PDMS

    NASA Astrophysics Data System (ADS)

    Sankaran, Jeyantt S.; Kahsai, Wintana T.; Pham, Uyen H. T.; Iqbal, Samir M.

    2011-03-01

    We report a novel method for the fabrication of microchannels that could potentially be used for pervaporation experiments, cell adhesion and cell movement studies and detection of selective protein bio-markers. PDMS can sustain high temperatures, has a high young's modulus and it is biologically inert. Hydrophobic-hydrophilic interactions at gel point of PDMS form the basis of the presented technique. The repulsion of hydrophilic particles by the hydrophobic polymer matrix, stemming from the reduction of entropy and free energy variations during polymerization, provides an elegant lithography-independent approach for the fabrication of self-aligned microchannels. This work was supported by National Science Foundation CAREER Grant (ECCS 0845669).

  4. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System

    SciTech Connect

    Jiang, Ximan

    2006-05-18

    The shrinking of IC devices has followed the Moore's Law for over three decades, which states that the density of transistors on integrated circuits will double about every two years. This great achievement is obtained via continuous advance in lithography technology. With the adoption of complicated resolution enhancement technologies, such as the phase shifting mask (PSM), the optical proximity correction (OPC), optical lithography with wavelength of 193 nm has enabled 45 nm printing by immersion method. However, this achievement comes together with the skyrocketing cost of masks, which makes the production of low volume application-specific IC (ASIC) impractical. In order to provide an economical lithography approach for low to medium volume advanced IC fabrication, a maskless ion beam lithography method, called Maskless Micro-ion-beam Reduction Lithography (MMRL), has been developed in the Lawrence Berkeley National Laboratory. The development of the prototype MMRL system has been described by Dr. Vinh Van Ngo in his Ph.D. thesis. But the resolution realized on the prototype MMRL system was far from the design expectation. In order to improve the resolution of the MMRL system, the ion optical system has been investigated. By integrating a field-free limiting aperture into the optical column, reducing the electromagnetic interference and cleaning the RF plasma, the resolution has been improved to around 50 nm. Computational analysis indicates that the MMRL system can be operated with an exposure field size of 0.25 mm and a beam half angle of 1.0 mrad on the wafer plane. Ion-ion interactions have been studied with a two-particle physics model. The results are in excellent agreement with those published by the other research groups. The charge-interaction analysis of MMRL shows that the ion-ion interactions must be reduced in order to obtain a throughput higher than 10 wafers per hour on 300-mm wafers. In addition, two different maskless lithography strategies

  5. Immersive Earth: Teaching Earth and Space with inexpensive immersive technology

    NASA Astrophysics Data System (ADS)

    Reiff, P. H.; Sumners, C.; Law, C. C.; Handron, K.

    2003-12-01

    In 1995 we pioneered "Space Update", the Digital Library for the rest of us", software that was so simple that a child could use it without a keyboard and yet would allow one-click updating of the daily earth and space science images without the dangers of having an open web browser on display. Thanks to NASA support, it allowed museums and schools to have a powerful exhibit for a tiny price. Over 40,000 disks in our series have been distributed so far to educators and the public. In 2003, with our partners we are again revolutionizing educational technology with a low-cost hardware and software solution to creating and displaying immersive content. Recently selected for funding as part of the REASoN competition, Immersive Earth is a partnership of scientists, museums, educators, and content providers. The hardware consists of a modest projector with a special fisheye lens to be used in an inflatable dome which many schools already have. This, coupled with a modest personal computer, can now easily project images and movies of earth and space, allows training students in 3-D content at a tiny fraction of the cost of a cave or fullscale dome theater. Another low-cost solution is the "Imove" system, where spherical movies can play on a personal computer, with the user changing the viewing direction with a joystick. We were the first to create immersive earth science shows, remain the leader in creating educational content that people want to see. We encourage people with "allsky" images or movies to bring it and see what it looks like inside a dome! Your content could be in our next show!

  6. Focused ion beam lithography and anodization combined nanopore patterning.

    PubMed

    Lu, Kathy; Zhao, Jingzhong

    2010-10-01

    In this study, focused ion beam lithography and anodization are combined to create different nanopore patterns. Uniform-, alternating-, and gradient-sized shallow nanopore arrays are first made on high purity aluminum by focused ion beam lithography. These shallow pore arrays are then used as pore initiation sites during anodization by different electrolytes. Depending on the nature of the anodization electrolyte, the nanopore patterns by focused ion beam lithography play different roles in further pore development during anodization. The pore-to-pore distance by focused ion beam lithography should match with that by anodization for guided pore development to be effective. Ordered and heterogeneous nanopore arrays are obtained by the focused ion beam lithography and anodization combined approach.

  7. Pattern transfer processes for 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Miyoshi, Seiro; Furukawa, Takamitsu; Watanabe, Hiroyuki; Irie, Shigeo; Itani, Toshiro

    2002-07-01

    We describe and evaluate three kinds of pattern transfer processes that are suitable for 157-nm lithography. These transfer processes are 1) a hard mask (HM) process using SiO as a HM material, 2) a HM process using an organic bottom anti-reflecting coating (BARC)/SiN structure, and 3) a bi- layer process using a silicon-containing resist and an organic film as the bottom layer. In all of these processes, the underlayer fo the resist acts as an anti-reflecting layer. For the HM processes, we patterned a newly developed fluorine-containing resist using a 157-nm microstepper, and transferred the resist patterns to the hard mask by reactive ion etching (RIE) with minimal critical dimension shift. Using the HM pattern, we then fabricated a 65nm Wsi/poly-Si gate pattern using a high-NA microstepper (NA=0.85). With the bi-layer process, we transferred a 60nm 1:1 lines and spaces pattern of a newly developed silicon-containing resist to a 300nm-thick organic film by RIE. The fabrication of a 65nm 1:1 gate pattern and 60nm 1:1 organic film patten clearly demonstrated that 157-nm lithography is the best candidate for fabricating sub-70nm node devices.

  8. Mask cost of ownership for advanced lithography

    NASA Astrophysics Data System (ADS)

    Muzio, Edward G.; Seidel, Philip K.

    2000-07-01

    As technology advances, becoming more difficult and more expensive, the cost of ownership (CoO) metric becomes increasingly important in evaluating technical strategies. The International SEMATECH CoC analysis has steadily gained visibility over the past year, as it attempts to level the playing field between technology choices, and create a fair relative comparison. In order to predict mask cots for advanced lithography, mask process flows are modeled using bets-known processing strategies, equipment cost, and yields. Using a newly revised yield mode, and updated mask manufacture flows, representative mask flows can be built. These flows are then used to calculate mask costs for advanced lithography down to the 50 nm node. It is never the goal of this type of work to provide absolute cost estimates for business planning purposes. However, the combination of a quantifiable yield model with a clearly defined set of mask processing flows and a cost model based upon them serves as an excellent starting point for cost driver analysis and process flow discussion.

  9. Economic consequences of high throughput maskless lithography

    NASA Astrophysics Data System (ADS)

    Hartley, John G.; Govindaraju, Lakshmi

    2005-11-01

    Many people in the semiconductor industry bemoan the high costs of masks and view mask cost as one of the significant barriers to bringing new chip designs to market. All that is needed is a viable maskless technology and the problem will go away. Numerous sites around the world are working on maskless lithography but inevitably, the question asked is "Wouldn't a one wafer per hour maskless tool make a really good mask writer?" Of course, the answer is yes, the hesitation you hear in the answer isn't based on technology concerns, it's financial. The industry needs maskless lithography because mask costs are too high. Mask costs are too high because mask pattern generators (PG's) are slow and expensive. If mask PG's become much faster, mask costs go down, the maskless market goes away and the PG supplier is faced with an even smaller tool demand from the mask shops. Technical success becomes financial suicide - or does it? In this paper we will present the results of a model that examines some of the consequences of introducing high throughput maskless pattern generation. Specific features in the model include tool throughput for masks and wafers, market segmentation by node for masks and wafers and mask cost as an entry barrier to new chip designs. How does the availability of low cost masks and maskless tools affect the industries tool makeup and what is the ultimate potential market for high throughput maskless pattern generators?

  10. Atomic Image Projection Electron Beam Lithography

    NASA Astrophysics Data System (ADS)

    Kim, Ki-Bum

    2006-03-01

    While we are approaching to the nanotechnology era, as was proposed by Richard Feynman in 1959, our main concern still lies in how one can controllably manufacture and utilize nanometer scale features. The top-down approaches, most notably, lithography based techniques still have the problem of throughput although it has been successfully demonstrate to make features with the size less than 10 nm. The bottom-up approaches, either utilizing chemical vapor deposition process to make carbon nanotube or wet-chemical process to make size controllable quantum dots and rods, still have the limitation of extending it to many different types of materials and also delivering them on a wafer size substrate to make nanodevices. In this talk, we will propose a novel electron beam lithography technique to make nanometer scale features. The novelty of this process lies in the fact that one can utilize the crystalline lattice image commonly observed by the high resolution transmission electron microscopy as an ultimate mask to generate nanometer scale patterns. Using this technique, we demonstrate that down to 45 nm pitch size can be resolved on hydrogen silsesquioxine (HSQ) e-beam resist material. The patterns are formed on Si substarte with the dot size of about 30 nm and the line size of about 25 nm. This technique can be extend to define less than 10 nm size features only if the suitable resist is developed.

  11. Cancer cell specific cytotoxic gene expression mediated by ARF tumor suppressor promoter constructs

    SciTech Connect

    Kurayoshi, Kenta; Ozono, Eiko; Iwanaga, Ritsuko; Bradford, Andrew P.; Komori, Hideyuki; Ohtani, Kiyoshi

    2014-07-18

    Highlights: • ARF promoter showed higher responsiveness to deregulated E2F activity than the E2F1 promoter. • ARF promoter showed higher cancer cell-specificity than E2F1 promoter to drive gene expression. • HSV-TK driven by ARF promoter showed higher cancer cell-specific cytotoxicity than that driven by E2F1 promoter. - Abstract: In current cancer treatment protocols, such as radiation and chemotherapy, side effects on normal cells are major obstacles to radical therapy. To avoid these side effects, a cancer cell-specific approach is needed. One way to specifically target cancer cells is to utilize a cancer specific promoter to express a cytotoxic gene (suicide gene therapy) or a viral gene required for viral replication (oncolytic virotherapy). For this purpose, the selected promoter should have minimal activity in normal cells to avoid side effects, and high activity in a wide variety of cancers to obtain optimal therapeutic efficacy. In contrast to the AFP, CEA and PSA promoters, which have high activity only in a limited spectrum of tumors, the E2F1 promoter exhibits high activity in wide variety of cancers. This is based on the mechanism of carcinogenesis. Defects in the RB pathway and activation of the transcription factor E2F, the main target of the RB pathway, are observed in almost all cancers. Consequently, the E2F1 promoter, which is mainly regulated by E2F, has high activity in wide variety of cancers. However, E2F is also activated by growth stimulation in normal growing cells, suggesting that the E2F1 promoter may also be highly active in normal growing cells. In contrast, we found that the tumor suppressor ARF promoter is activated by deregulated E2F activity, induced by forced inactivation of pRB, but does not respond to physiological E2F activity induced by growth stimulation. We also found that the deregulated E2F activity, which activates the ARF promoter, is detected only in cancer cell lines. These observations suggest that ARF promoter

  12. Gestural interfaces for immersive environments

    NASA Astrophysics Data System (ADS)

    Margolis, Todd

    2014-02-01

    We are witnessing an explosion of new forms of Human Computer Interaction devices lately for both laboratory research and home use. With these new affordance in user interfaces (UI), how can gestures be used to improve interaction for large scale immersive display environments. Through the investigation of full body, head and hand tracking, this paper will discuss various modalities of gesture recognition and compare their usability to other forms of interactivity. We will explore a specific implementation of hand gesture tracking within a large tiled display environment for use with common collaborative media interaction activities.

  13. Purification and Properties of ArfI, an α-l-Arabinofuranosidase from Cytophaga xylanolytica†

    PubMed Central

    Renner, Michael J.; Breznak, John A.

    1998-01-01

    An α-l-arabinofuranosidase (α-l-arabinofuranoside arabinofuranohydrolase [EC 3.2.1.55]; referred to below as ArfI) from Cytophaga xylanolytica XM3 was purified 85-fold by anion-exchange and hydrophobic interaction column chromatography. The native enzyme had a pI of 6.1 and an apparent molecular mass of 160 to 210 kDa, and it appeared to be a trimer or tetramer consisting of 56-kDa subunits. With p-nitrophenyl-α-l-arabinofuranoside as the substrate, the enzyme exhibited a Km of 0.504 mM and a Vmax of 319 μmol · min−1 · mg of protein−1, and it had optimum activity at pH 5.8 and 45°C. ArfI was relatively stable over a pH range of 4 to 10 and at temperatures up to 45°C, and it retained nearly full activity when stored at 4°C for periods as long as 24 months. The enzyme also released arabinose from 4-methylumbelliferyl-α-l-arabinofuranoside, as well as from rye, wheat, corn cob, and oat spelt arabinoxylans and sugar beet arabinan, but not from arabinogalactan. ArfI showed no hydrolytic activity toward a range of p-nitrophenyl- or 4-methylumbelliferyl-glycosides other than arabinoside, for which it was entirely specific for the α-l-furanoside configuration. ArfI interacted synergistically with three partially purified endoxylanase fractions from C. xylanolytica in hydrolyzing rye arabinoxylan. However, cell fractionation studies revealed that ArfI was largely, if not entirely, cytoplasmic, so its activity in vivo is probably most relevant to hydrolysis of arabinose-containing oligosaccharides small enough to pass through the cytoplasmic membrane. Antibodies prepared against purified ArfI also cross-reacted with arabinofuranosidases from other freshwater and marine strains of C. xylanolytica, as well as with some proteins that did not possess arabinofuranosidase activity. To our knowledge, this is the first α-l-arabinofuranosidase to be purified and characterized from any gliding bacterium. PMID:9435061

  14. Precision process calibration and CD predictions for low-k1 lithography

    NASA Astrophysics Data System (ADS)

    Chen, Ting; Park, Sangbong; Berger, Gabriel; Coskun, Tamer H.; de Vocht, Joep; Chen, Fung; Yu, Linda; Hsu, Stephen; van den Broeke, Doug; Socha, Robert; Park, Jungchul; Gronlund, Keith; Davis, Todd; Plachecki, Vince; Harris, Tom; Hansen, Steve; Lambson, Chuck

    2005-06-01

    Leading resist calibration for sub-0.3 k1 lithography demands accuracy <2nm for CD through pitch. An accurately calibrated resist process is the prerequisite for establishing production-worthy manufacturing under extreme low k1. From an integrated imaging point of view, the following key components must be simultaneously considered during the calibration - high numerical aperture (NA>0.8) imaging characteristics, customized illuminations (measured vs. modeled pupil profiles), resolution enhancement technology (RET) mask with OPC, reticle metrology, and resist thin film substrate. For imaging at NA approaching unity, polarized illumination can impact significantly the contrast formation in the resist film stack, and therefore it is an important factor to consider in the CD-based resist calibration. For aggressive DRAM memory core designs at k1<0.3, pattern-specific illumination optimization has proven to be critical for achieving the required imaging performance. Various optimization techniques from source profile optimization with fixed mask design to the combined source and mask optimization have been considered for customer designs and available imaging capabilities. For successful low-k1 process development, verification of the optimization results can only be made with a sufficiently tunable resist model that can predicate the wafer printing accurately under various optimized process settings. We have developed, for resist patterning under aggressive low-k1 conditions, a novel 3D diffusion model equipped with double-Gaussian convolution in each dimension. Resist calibration with the new diffusion model has demonstrated a fitness and CD predication accuracy that rival or outperform the traditional 3D physical resist models. In this work, we describe our empirical approach to achieving the nm-scale precision for advanced lithography process calibrations, using either measured 1D CD through-pitch or 2D memory core patterns. We show that for ArF imaging, the

  15. The identification and characterization of specific ARF-Aux/IAA regulatory modules in plant growth and development.

    PubMed

    Krogan, Naden T; Berleth, Thomas

    2015-01-01

    The current model of auxin-inducible transcription describes numerous regulatory interactions between AUXIN RESPONSE FACTORs (ARFs) and Aux/IAAs. However, specific relationships between individual members of these families in planta remain largely uncharacterized. Using a systems biology approach, the entire suite of Aux/IAA genes directly regulated by the developmentally pivotal ARF MONOPTEROS (MP) was recently determined for multiple Arabidopsis tissue types. This study showed that MP directly targets distinct subclades of Aux/IAAs, revealing potential regulatory modules of redundantly acting Aux/IAAs involved in MP-dependent processes. Further, functional analyses indicated that the protein products of these targeted Aux/IAAs negatively feedback on MP. Thus, comprehensive identification of Aux/IAAs targeted by individual ARFs will generate biologically meaningful networks of ARF-Aux/IAA regulatory modules controlling distinct plant pathways.

  16. Structure of an ADP-ribosylation factor, ARF1, from Entamoeba histolytica bound to Mg(2+)-GDP.

    PubMed

    Serbzhinskiy, Dmitry A; Clifton, Matthew C; Sankaran, Banumathi; Staker, Bart L; Edwards, Thomas E; Myler, Peter J

    2015-05-01

    Entamoeba histolytica is the etiological agent of amebiasis, a diarrheal disease which causes amoebic liver abscesses and amoebic colitis. Approximately 50 million people are infected worldwide with E. histolytica. With only 10% of infected people developing symptomatic amebiasis, there are still an estimated 100,000 deaths each year. Because of the emergence of resistant strains of the parasite, it is necessary to find a treatment which would be a proper response to this challenge. ADP-ribosylation factor (ARF) is a member of the ARF family of GTP-binding proteins. These proteins are ubiquitous in eukaryotic cells; they generally associate with cell membranes and regulate vesicular traffic and intracellular signalling. The crystal structure of ARF1 from E. histolytica has been determined bound to magnesium and GDP at 1.8 Å resolution. Comparison with other structures of eukaryotic ARF proteins shows a highly conserved structure and supports the interswitch toggle mechanism of communicating the conformational state to partner proteins.

  17. [Jacuzzi-immersion for obstetric analgesia].

    PubMed

    Eldor, J; Burstein, M; Dudakova, I; Stark, M

    1992-12-15

    The effect of immersion in a jacuzzi in relieving labor pains, and on cervical dilatation was examined in 40 parturients. They were immersed in the jacuzzi during labor for an average of 25.5 minutes. Labor pains decreased during immersion by 2.59 degrees (scale of 0-10) compared with an average increase in labor pains of 0.25 degrees in 40 control women who were not immersed (p < 0.01). The cervical opening increased during immersion by an average of 1.5 cm in the test group, compared with 0.3 cm in the controls (p < 0.01). Immersion in a jacuzzi during labor is apparently associated with analgesia and accelerated cervical dilatation.

  18. Role of protein-phospholipid interactions in the activation of ARF1 by the guanine nucleotide exchange factor Arno.

    PubMed

    Paris, S; Béraud-Dufour, S; Robineau, S; Bigay, J; Antonny, B; Chabre, M; Chardin, P

    1997-08-29

    Arno is a 47-kDa human protein recently identified as a guanine nucleotide exchange factor for ADP ribosylation factor 1 (ARF1) with a central Sec7 domain responsible for the exchange activity and a carboxyl-terminal pleckstrin homology (PH) domain (Chardin, P., Paris, S., Antonny, B., Robineau, S., Béraud-Dufour, S., Jackson, C. L., and Chabre, M. (1996) Nature 384, 481-484). Binding of the PH domain to phosphatidylinositol 4,5-bisphosphate (PIP2) greatly enhances Arno-mediated activation of myristoylated ARF1. We show here that in the absence of phospholipids, Arno promotes nucleotide exchange on [Delta17]ARF1, a soluble mutant of ARF1 lacking the first 17 amino acids. This reaction is unaffected by PIP2, which suggests that the PIP2-PH domain interaction does not directly regulate the catalytic activity of Arno but rather serves to recruit Arno to membranes. Arno catalyzes the release of GDP more efficiently than that of GTP from [Delta17]ARF1, and a stable complex between Arno Sec7 domain and nucleotide-free [Delta17]ARF1 can be isolated. In contrast to [Delta17]ARF1, full-length unmyristoylated ARF1 is not readily activated by Arno in solution. Its activation requires the presence of phospholipids and a reduction of ionic strength and Mg2+ concentration. PIP2 is strongly stimulatory, indicating that binding of Arno to phospholipids is involved, but in addition, electrostatic interactions between phospholipids and the amino-terminal portion of unmyristoylated ARF1GDP seem to be important. We conclude that efficient activation of full-length ARF1 by Arno requires a membrane surface and two distinct protein-phospholipid interactions: one between the PH domain of Arno and PIP2, and the other between amino-terminal cationic residues of ARF1 and anionic phospholipids. The latter interaction is normally induced by insertion of the amino-terminal myristate into the bilayer but can also be artificially facilitated by decreasing Mg2+ and salt concentrations.

  19. Double dipole lithography for 65-nm node and beyond: a technology readiness review

    NASA Astrophysics Data System (ADS)

    Hsu, Stephen D.; Eurlings, Mark; Hendrickx, Eric; Van Den Broeke, Douglas J.; Chiou, Tsann-Bim; Chen, J. Fung; Laidig, Thomas L.; Shi, Xuelong; Finders, Jo

    2004-08-01

    Double Dipole Lithography (DDL) has been demonstrated to be capable of imaging complex 2D patterns for full-chip application. Due to inherently high aerial image contrast, we have found that there is strong potential for this technology to meet manufacturing line width roughness (LWR) and critical dimension uniformity (CDU) requirements for the 65nm node using ArF binary chrome masks or 6% attenuated phase shift mask (AttPSM). For patterning at k1 less than 0.35, DDL is a Resolution Enhancement Technology (RET) that offers an acceptable process window without resorting to costly hard phase shift masks. To use DDL for printing actual IC device patterns, the original design data must be converted into "vertical (V)" and "horizontal (H)" masks for the respective X and Y dipole exposures. An improved model-based DDL mask data processing steps has been demonstrated that it is possible to convert complex logic and memory data to X-Y dipole exposure compatible layout. Due to the double exposure, stray light must be well controlled to ensure uniform printing across the entire chip. One solution to minimize stray light is to apply large patches of chrome in open field areas to reduce the background transmission during exposure. Unfortunately, this is not feasible for most poly gate masks using a positive resist process. In this work, we report an improved model based DDL layout conversion methodology for full-chip application. A new generation of DDL technology reticle set was developed to verify the performance. Background light shielding is a critical part of the DDL. We report an innovative shielding scheme to minimize the negative impact of stray light for the critical features during double exposures.

  20. Immersed Boundary Fractional Step Method

    NASA Astrophysics Data System (ADS)

    Taira, Kunihiko

    2005-11-01

    We present a new formulation of the immersed boundary method for incompressible flow over moving rigid bodies. Like many existing techniques we introduce a set of interpolation points on the surface at which the no-slip boundary condition is satisfied by including a (regularized) force in the momentum equations. By introducing interpolation and regularization operators and grouping pressure and force unknowns together, the discretized Navier-Stokes equations with the immersed boundary method can be formulated with an identical structure to the traditional fractional step method, but with a modified Poisson equation whose unknowns are both the pressure and the boundary force. The method highlights the analogous roles of pressure and boundary forcing as Lagrange multipliers in order to satisfy the divergence free and no-slip constraints, respectively. The overall method is found to be a simple addition to an existing fractional step code and the extended Poisson equation is solved efficiently with the conjugate gradient method. We demonstrate convergence and present results for two-dimensional flows with a variety of moving rigid bodies.

  1. Tobacco TTG2 and ARF8 function concomitantly to control flower colouring by regulating anthocyanin synthesis genes.

    PubMed

    Li, P; Chen, X; Sun, F; Dong, H

    2017-03-01

    Recently we elucidated that tobacco TTG2 cooperates with ARF8 to regulate the vegetative growth and seed production. Here we show that TTG2 and ARF8 control flower colouring by regulating expression of ANS and DFR genes, which function in anthocyanin biosynthesis. Genetic modifications that substantially altered expression levels of the TTG2 gene and production quantities of TTG2 protein were correlated with flower development and colouring. Degrees of flower colour were increased by TTG2 overexpression but decreased through TTG2 silencing, in coincidence with high and low concentrations of anthocyanins in flowers. Of five genes involved in the anthocyanin biosynthesis pathway, only ANS and DFR were TTG2-regulated and displayed enhancement and diminution of expression with TTG2 overexpression and silencing, respectively. The floral expression of ANS and DFR also needed a functional ARF8 gene, as ANS and DFR expression were attenuated by ARF8 silencing, which concomitantly diminished the role of TTG2 in anthocyanin production. While ARF8 required TTG2 to be expressed by itself and to regulate ANS and DFR expression, the concurrent presence of normally functional TTG2 and ARF8 was critical for floral production of anthocyanins and also for flower colouration. Our data suggest that TTG2 functions concomitantly with ARF8 to control degrees of flower colour by regulating expression of ANS and DFR, which are involved in the anthocyanin biosynthesis pathway. ARF8 depends on TTG2 to regulate floral expression of ANS and DFR with positive effects on anthocyanin production and flower colour.

  2. Structure-based discovery of an inhibitor of Arf activation by Sec7 domains through targeting of protein-protein complexes.

    PubMed

    Viaud, Julien; Zeghouf, Mahel; Barelli, Hélène; Zeeh, Jean-Christophe; Padilla, André; Guibert, Bernard; Chardin, Pierre; Royer, Catherine A; Cherfils, Jacqueline; Chavanieu, Alain

    2007-06-19

    Small molecules that produce nonfunctional protein-protein complexes are an alternative to competitive inhibitors for the inhibition of protein functions. Here we target the activation of the small GTP-binding protein Arf1, a major regulator of membrane traffic, by the Sec7 catalytic domain of its guanine nucleotide exchange factor ARNO. The crystal structure of the Arf1-GDP/ARNO complex, which initiates the exchange reaction, was used to discover an inhibitor, LM11, using in silico screening of a flexible pocket near the Arf1/ARNO interface. Using fluorescence kinetics and anisotropy, NMR spectroscopy and mutagenesis, we show that LM11 acts following a noncompetitive mechanism in which the inhibitor targets both Arf1-GDP and the Arf1-GDP/ARNO complex and produces a nonfunctional Arf-GDP/ARNO complex whose affinity is similar to that of the native complex. In addition, LM11 recognizes features of both Arf and ARNO near the Arf/Sec7 interface, a characteristic reminiscent of the paradigm interfacial inhibitor Brefeldin A. We then show that LM11 is a cell-active inhibitor that impairs Arf-dependent trafficking structures at the Golgi. Furthermore, LM11 inhibits ARNO-dependent migration of Madin-Darby canine kidney (MDCK) cells, demonstrating that ARNO is a target of LM11 in cells. Remarkably, LM11 inhibits the activation of Arf1 but not Arf6 in vitro, pointing to a possible synergy between Arf1 and Arf6 activation by ARNO in cell migration. Our design method shows that flexible regions in protein-protein complexes provide drugable sites with the potential to develop novel tools for investigating and inhibiting signaling pathways.

  3. Immersion in water during labor and delivery.

    PubMed

    2014-04-01

    Immersion in water has been suggested as a beneficial alternative for labor, delivery, or both and over the past decades has gained popularity in many parts of the world. Immersion in water during the first stage of labor may be associated with decreased pain or use of anesthesia and decreased duration of labor. However, there is no evidence that immersion in water during the first stage of labor otherwise improves perinatal outcomes, and it should not prevent or inhibit other elements of care. The safety and efficacy of immersion in water during the second stage of labor have not been established, and immersion in water during the second stage of labor has not been associated with maternal or fetal benefit. Given these facts and case reports of rare but serious adverse effects in the newborn, the practice of immersion in the second stage of labor (underwater delivery) should be considered an experimental procedure that only should be performed within the context of an appropriately designed clinical trial with informed consent. Facilities that plan to offer immersion in the first stage of labor need to establish rigorous protocols for candidate selection, maintenance and cleaning of tubs and immersion pools, infection control procedures, monitoring of mothers and fetuses at appropriate intervals while immersed, and immediately and safely moving women out of the tubs if maternal or fetal concerns develop.

  4. Design and Lithographic Characteristics of Alicyclic Fluoropolymer for ArF Chemically Amplified Resists

    NASA Astrophysics Data System (ADS)

    Maeda, Katsumi; Nakano, Kaichiro; Shirai, Masamitsu

    2006-12-01

    We designed a novel alicyclic fluoropolymer, poly[3-hydroxy-4-(hexafluoro-2-hydroxyisopropyl)tricyclodecene], as an ArF (193 nm) chemically amplified resist. This fluoropolymer has a hexafluoroisopropanol group as an alkaline soluble unit and a hydroxyl group for improving adhesion. This polymer also exhibited a high transparency of 93%/150 nm at 193 nm, high thermal stability (355 °C), and a good adhesion to a Si substrate compared with a poly(norbornene) with a hexafluoroisopropanol group. The etching rate of our developed fluoropolymer for CF4 gas was 1.29 times that of the KrF resist. Moreover, a chemically amplified positive resist comprising an ethoxymethyl-protected polymer and a photoacid generator achieved a 110 nm line-and-space pattern with an ArF exposure.

  5. Arf6 and microtubules in adhesion-dependent trafficking of lipid rafts

    PubMed Central

    Balasubramanian, Nagaraj; Scott, David W.; Castle, J. David; Casanova, James E.; Schwartz, Martin Alexander

    2009-01-01

    SUMMARY Integrin-mediated adhesion regulates Rac1 membrane binding sites within lipid rafts. Detachment of cells from the substratum triggers clearance of rafts from the plasma membrane through caveolin-dependent internalization. The small GTPase Arf6 and microtubules also regulate Rac-dependent cell spreading and migration but the mechanisms are poorly understood. We now show that endocytosis of rafts after detachment requires F-actin, followed by microtubule-dependent trafficking to recycling endosomes (RE). When cells are replated on fibronectin, rafts exit from RE in an Arf6-dependent manner and return to the plasma membrane along microtubules. Both of these steps are required for plasma membrane targeting and activation of Rac1. These data therefore define a novel membrane raft trafficking pathway that is crucial for anchorage-dependent signaling. PMID:18026091

  6. Pathogenesis of sudden death following water immersion (immersion syndrome)

    NASA Technical Reports Server (NTRS)

    Buhring, M.; Spies, H. F.

    1981-01-01

    Sympathetic activity under cold stress is investigated. Predominantly vagal cardio-depressive reflexes are discussed besides currently known mechanisms of sudden death after water immersion. Pronounced circulatory centralization in diving animals as well as following exposure in cold water indicates additional sympathetic activity. In cold water baths of 15 C, measurements indicate an increase in plasma catecholamine levels by more than 300 percent. This may lead to cardiac arrhythmias by the following mechanisms: cold water essentially induces sinus bradycardia; brady-and tachycardiarrhythmias may supervene as secondary complications; sinusbradycardia may be enhanced by sympathetic hypertonus. Furthermore, ectopic dysrhythmias are liable to be induced by the strictly sympathetic innervation of the ventricle. Myocardial ischemia following a rise in peripheral blood pressure constitutes another arrhythmogenic factor. Some of these reactions are enhanced by alcohol intoxication.

  7. Functional interactions between Lmo2, the Arf tumor suppressor, and Notch1 in murine T-cell malignancies.

    PubMed

    Treanor, Louise M; Volanakis, Emmanuel J; Zhou, Sheng; Lu, Taihe; Sherr, Charles J; Sorrentino, Brian P

    2011-05-19

    LMO2 is a target of chromosomal translocations in T-cell tumors and was activated by retroviral vector insertions in T-cell tumors from X-SCID patients in gene therapy trials. To better understand the cooperating genetic events in LMO2-associated T-cell acute lymphoblastic leukemia (T-ALL), we investigated the roles of Arf tumor suppressor loss and Notch activation in murine models of transplantation. Lmo2 overexpression enhanced the expansion of primitive DN2 thymocytes, eventually facilitating the stochastic induction of clonal CD4(+)/CD8(+) malignancies. Inactivation of the Arf tumor suppressor further increased the self-renewal capacity of the primitive, preleukemic thymocyte pool and accelerated the development of aggressive, Lmo2-induced T-cell lympholeukemias. Notch mutations were frequently detected in these Lmo2-induced tumors. The Arf promoter was not directly engaged by Lmo2 or mutant Notch, and use of a mouse model in which activation of a mutant Notch allele depends on previous engagement of the Arf promoter revealed that Notch activation could occur as a subsequent event in T-cell tumorigenesis. Therefore, Lmo2 cooperates with Arf loss to enhance self-renewal in primitive thymocytes. Notch mutation and Arf inactivation appear to independently cooperate in no requisite order with Lmo2 overexpression in inducing T-ALL, and all 3 events remained insufficient to guarantee immediate tumor development.

  8. [The structural characteristics, alternative splicing and genetic experession analysis of ADP-ribosylation-factor 1 (arf1) in cotton].

    PubMed

    Ren, Mao-Zhi; Chen, Quan-Jia; Zhang, Rui; Guo, San-Dui

    2004-08-01

    The full-length cDNA,DNA and promoter of ADP-ribosylation-factor 1 (arf1) was isolated from Gossypium hirsutum Y18 by means of isocaudarner inverse PCR (II-PCR) and rapid isolating cDNA 5' unknown sequence and promoter (RICUP) established in our lab. Results indicated that the gene is 4 360 bp in size, including seven exons and six introns. Interestingly, alterative splicing occurs at intron I. Differential processing of intron 1 yields three different transcripts with 1 026 bp, 1103 bp and 1 544 bp in sizes, respectively. Arf1 encodes 181 amino acids. Sequence analysis indicated that sequence upstream transcription initiation site of arf1 includes typical initiator, TATA box, CCAAT box, GC box and several forward and reverse repeat sequences. And typical promoter structures, such as AT-rich sequence and palindrome structure have been detected in the sequence downstream transcription initiation site. Southern blot analysis indicated that the gene has two copies in the genome of cotton. Northern blot confirmed the predominate expression of arf1 in reproductive organs of cotton, including bud, flower, fiber and boll. Also, the feature and character of arf1 and its promoter have been studied. This study will lay foundation for the other research on function of arf1 in the development of reproductive organs in cotton.

  9. Over-expression of mango (Mangifera indica L.) MiARF2 inhibits root and hypocotyl growth of Arabidopsis.

    PubMed

    Wu, Bei; Li, Yun-He; Wu, Jian-Yong; Chen, Qi-Zhu; Huang, Xia; Chen, Yun-Feng; Huang, Xue-Lin

    2011-06-01

    An auxin response factor 2 gene, MiARF2, was cloned in our previous study [1] from the cotyledon section of mango (Mangifera indica L. cv. Zihua) during adventitious root formation, which shares an 84% amino acid sequence similarity to Arabidopsis ARF2. This study was to examine the effects of over-expression of the full-length MiARF2 open reading frame on the root and hypocotyl growth in Arabidopsis. Phenotype analysis showed that the T(3) transgenic lines had about 20-30% reduction in the length of hypocotyls and roots of the seedlings in comparison with the wild-type. The transcription levels of ANT and ARGOS genes which play a role in controlling organ size and cell proliferation in the transgenic seedlings also decreased. Therefore, the inhibited root and hypocotyl growth in the transgenic seedlings may be associated with the down-regulated transcription of ANT and ARGOS by the over-expression of MiARF2. This study also suggests that although MiARF2 only has a single DNA-binding domain (DBD), it can function as other ARF-like proteins containing complete DBD, middle region (MR) and carboxy-terminal dimerization domain (CTD).

  10. The Small GTPase Arf6 Is Essential for the Tram/Trif Pathway in TLR4 Signaling*

    PubMed Central

    Van Acker, Tim; Eyckerman, Sven; Vande Walle, Lieselotte; Gerlo, Sarah; Goethals, Marc; Lamkanfi, Mohamed; Bovijn, Celia; Tavernier, Jan; Peelman, Frank

    2014-01-01

    Recognition of lipopolysaccharides (LPS) by Toll-like receptor 4 (TLR4) at the plasma membrane triggers NF-κB activation through recruitment of the adaptor proteins Mal and MyD88. Endocytosis of the activated TLR4 allows recruitment of the adaptors Tram and Trif, leading to activation of the transcription factor IRF3 and interferon production. The small GTPase ADP-ribosylation factor 6 (Arf6) was shown to regulate the plasma membrane association of Mal. Here we demonstrate that inhibition of Arf6 also markedly reduced LPS-induced cytokine production in Mal−/− mouse macrophages. In this article, we focus on a novel role for Arf6 in the MyD88-independent TLR4 pathway. MyD88-independent IRF3 activation and IRF3-dependent gene transcription were strictly dependent on Arf6. Arf6 was involved in transport of Tram to the endocytic recycling compartment and internalization of LPS, possibly explaining its requirement for LPS-induced IRF3 activation. Together, these results show a critical role for Arf6 in regulating Tram/Trif-dependent TLR4 signaling. PMID:24297182

  11. The Qb-SNARE Memb11 interacts specifically with Arf1 in the Golgi apparatus of Arabidopsis thaliana.

    PubMed

    Marais, Claireline; Wattelet-Boyer, Valérie; Bouyssou, Guillaume; Hocquellet, Agnès; Dupuy, Jean-William; Batailler, Brigitte; Brocard, Lysiane; Boutté, Yohann; Maneta-Peyret, Lilly; Moreau, Patrick

    2015-11-01

    The SNARE (soluble N-ethylmaleimide-sensitive factor attachment protein receptor) proteins are critical for the function of the secretory pathway. The SNARE Memb11 is involved in membrane trafficking at the ER-Golgi interface. The aim of the work was to decipher molecular mechanisms acting in Memb11-mediated ER-Golgi traffic. In mammalian cells, the orthologue of Memb11 (membrin) is potentially involved in the recruitment of the GTPase Arf1 at the Golgi membrane. However molecular mechanisms associated to Memb11 remain unknown in plants. Memb11 was detected mainly at the cis-Golgi and co-immunoprecipitated with Arf1, suggesting that Arf1 may interact with Memb11. This interaction of Memb11 with Arf1 at the Golgi was confirmed by in vivo BiFC (Bimolecular Fluorescence Complementation) experiments. This interaction was found to be specific to Memb11 as compared to either Memb12 or Sec22. Using a structural bioinformatic approach, several sequences in the N-ter part of Memb11 were hypothesized to be critical for this interaction and were tested by BiFC on corresponding mutants. Finally, by using both in vitro and in vivo approaches, we determined that only the GDP-bound form of Arf1 interacts with Memb11. Together, our results indicate that Memb11 interacts with the GDP-bound form of Arf1 in the Golgi apparatus.

  12. Step and flash imprint lithography for semiconductor high volume manufacturing?

    NASA Astrophysics Data System (ADS)

    Malloy, M.; Litt, L. C.

    2010-03-01

    Step and Flash Imprint Lithography (SFIL), a form of ultraviolet nanoimprint lithography (UV-NIL), is recognized for its resolution and patterning abilities. It is one of the few next generation lithography techniques capable of meeting the resolution requirements of future semiconductor devices. However, many integration issues such as defectivity, throughput, and overlay must be resolved before SFIL can be used for semiconductor high volume manufacturing (HVM). This paper discusses the current status of SFIL, including the process and templates, and shows where more industry collaboration is needed to solve the most critical issues.

  13. Hybrid hotspot detection using regression model and lithography simulation

    NASA Astrophysics Data System (ADS)

    Kimura, Taiki; Matsunawa, Tetsuaki; Nojima, Shigeki; Pan, David Z.

    2016-03-01

    As minimum feature sizes shrink, unexpected hotspots appear on wafers. Therefore, it is important to detect and fix these hotspots at design stage to reduce development time and manufacturing cost. Currently, as the most accurate approach, lithography simulation is widely used to detect such hotspots. However, it is known to be time-consuming. This paper proposes a novel aerial image synthesizing method using regression and minimum lithography simulation for only hotspot detection. Experimental results show hotspot detection on the proposed method is equivalent compared with the results on the conventional hotspot detection method which uses only lithography simulation with much less computational cost.

  14. Photonic integrated circuits: new challenges for lithography

    NASA Astrophysics Data System (ADS)

    Bolten, Jens; Wahlbrink, Thorsten; Prinzen, Andreas; Porschatis, Caroline; Lerch, Holger; Giesecke, Anna Lena

    2016-10-01

    In this work routes towards the fabrication of photonic integrated circuits (PICs) and the challenges their fabrication poses on lithography, such as large differences in feature dimension of adjacent device features, non-Manhattan-type features, high aspect ratios and significant topographic steps as well as tight lithographic requirements with respect to critical dimension control, line edge roughness and other key figures of merit not only for very small but also for relatively large features, are highlighted. Several ways those challenges are faced in today's low-volume fabrication of PICs, including the concept multi project wafer runs and mix and match approaches, are presented and possible paths towards a real market uptake of PICs are discussed.

  15. Nanoimprint lithography using disposable biomass template

    NASA Astrophysics Data System (ADS)

    Hanabata, Makoto; Takei, Satoshi; Sugahara, Kigen; Nakajima, Shinya; Sugino, Naoto; Kameda, Takao; Fukushima, Jiro; Matsumoto, Yoko; Sekiguchi, Atsushi

    2016-04-01

    A novel nanoimprint lithography process using disposable biomass template having gas permeability was investigated. It was found that a disposable biomass template derived from cellulose materials shows an excellent gas permeability and decreases transcriptional defects in conventional templates such as quartz, PMDS, DLC that have no gas permeability. We believe that outgasses from imprinted materials are easily removed through the template. The approach to use a cellulose for template material is suitable as the next generation of clean separation technology. It is expected to be one of the defect-less thermal nanoimprint lithographic technologies. It is also expected that volatile materials and solvent including materials become available that often create defects and peelings in conventional temples that have no gas permeability.

  16. Photoresist composition for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  17. New antireflective coatings for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Xu, Gu; Guerrero, Douglas J.; Dobson, Norman

    1998-06-01

    New bottom antireflective coatings (BARCs) for 193 nm lithography have been recently developed by Brewer Science Inc. Copolymers of benzyl methacrylate (or benzyl acrylate) and hydroxypropyl methacrylate have been synthesized and used as a main component in 193 nm BARCs. The acrylic copolymers have strong absorbance at 193 nm UV light wavelength. The 193 nm BARCs were formulated in safe solvents such as ethyl lactate and formed by spin-on coating process. Thermosetting of the 193 nm BARCs limited their intermixing with photoresists. These 193 nm BARCs had optical density of about 10 micrometers -1, k equals 0.35, and n equals 1.81. Preliminary oxygen plasma etch rates were > 1.5 times DUV resists. Good profiles at small feature sizes (< 0.20 micrometers ) were achieved with tested photoresists.

  18. Patterning proteins and cells using soft lithography.

    PubMed

    Kane, R S; Takayama, S; Ostuni, E; Ingber, D E; Whitesides, G M

    1999-12-01

    This review describes the pattering of proteins and cells using a non-photolithographic microfabrication technology, which we call 'soft lithography' because it consists of a set of related techniques, each of which uses stamps or channels fabricated in an elastomeric ('soft') material for pattern transfer. The review covers three soft lithographic techniques: microcontact printing, patterning using microfluidic channels, and laminar flow patterning. These soft lithographic techniques are inexpensive, are procedurally simple, and can be used to pattern a variety of planar and non-planar substrates. Their successful application does not require stringent regulation of the laboratory environment, and they can be used to pattern surfaces with delicate ligands. They provide control over both the surface chemistry and the cellular environment. We discuss both the procedures for patterning based on these soft lithographic techniques, and their applications in biosensor technology, in tissue engineering, and for fundamental studies in cell biology.

  19. Femtolitre chemistry assisted by microfluidic pen lithography

    PubMed Central

    Carbonell, Carlos; Stylianou, Kyriakos C.; Hernando, Jordi; Evangelio, Emi; Barnett, Sarah A.; Nettikadan, Saju; Imaz, Inhar; Maspoch, Daniel

    2013-01-01

    Chemical reactions at ultrasmall volumes are becoming increasingly necessary to study biological processes, to synthesize homogenous nanostructures and to perform high-throughput assays and combinatorial screening. Here we show that a femtolitre reaction can be realized on a surface by handling and mixing femtolitre volumes of reagents using a microfluidic stylus. This method, named microfluidic pen lithography, allows mixing reagents in isolated femtolitre droplets that can be used as reactors to conduct independent reactions and crystallization processes. This strategy overcomes the high-throughput limitations of vesicles and micelles and obviates the usually costly step of fabricating microdevices and wells. We anticipate that this process enables performing distinct reactions (acid-base, enzymatic recognition and metal-organic framework synthesis), creating multiplexed nanoscale metal-organic framework arrays, and screening combinatorial reactions to evaluate the crystallization of novel peptide-based materials. PMID:23863998

  20. Photoresist composition for extreme ultraviolet lithography

    SciTech Connect

    Felter, T.E.; Kubiak, G.D.

    1999-11-23

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4--0.05 {mu}m using projection lithography and extreme ultraviolet (EUV) radiation is disclosed. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  1. Identification of ARF and AUX/IAA gene families in Rafflesia cantleyi

    NASA Astrophysics Data System (ADS)

    Elias, Nur Atiqah Mohd; Goh, Hoe-Han; Isa, Nurulhikma Md; Wan, Kiew-Lian

    2016-11-01

    Rafflesia is a unique plant that produces the largest flowers in the world. It has a short blooming period of 6 to 7 days. Due to its rarity and limited accessibility, little is known about the growth and developmental process in the Rafflesia plant. In all plant species, auxin is the key hormone that is involved in growth and development. The auxin signal transduction involves members of the ARF transcription factor and AUX/IAA regulator families, which activate or inhibit the regulation of auxin response genes, thereby control the developmental process in plants. To gain a better understanding of molecular regulations in the Rafflesia plant development during flowering, members of the ARF and AUX/IAA gene families were identified from the transcriptome data of flower blooming stages in Rafflesia cantleyi. Based on Rafflesia unique transcripts (UTs) against the Arabidopsis TAIR database using BLASTX search, a total of nine UTs were identified as ARF transcription factors, while another seven UTs were identified as AUX/IAA regulators. These genes were found to be expressed in all three R. cantleyi flower stages i.e. days 1 (F1), 3 (F2), and 5 (F3). Gene expression analysis identified three genes that are differentially expressed in stage F1 vs. F2 i.e. IAA4 is upregulated while IAA8 and ARF3 are downregulated. These genes may be involved in the activation and/or inhibition of the auxin signal transduction pathway. Further analysis of these genes may unravel their function in the phenotypic development of the Rafflesia plant.

  2. Activated Kras and Ink4a/Arf deficiency cooperate to produce metastatic pancreatic ductal adenocarcinoma

    PubMed Central

    Aguirre, Andrew J.; Bardeesy, Nabeel; Sinha, Manisha; Lopez, Lyle; Tuveson, David A.; Horner, James; Redston, Mark S.; DePinho, Ronald A.

    2003-01-01

    Pancreatic ductal adenocarcinoma ranks among the most lethal of human malignancies. Here, we assess the cooperative interactions of two signature mutations in mice engineered to sustain pancreas-specific Cre-mediated activation of a mutant Kras allele (KrasG12D) and deletion of a conditional Ink4a/Arf tumor suppressor allele. The phenotypic impact of KrasG12D alone was limited primarily to the development of focal premalignant ductal lesions, termed pancreatic intraepithelial neoplasias (PanINs), whereas the sole inactivation of Ink4a/Arf failed to produce any neoplastic lesions in the pancreas. In combination, KrasG12D expression and Ink4a/Arf deficiency resulted in an earlier appearance of PanIN lesions and these neoplasms progressed rapidly to highly invasive and metastatic cancers, resulting in death in all cases by 11 weeks. The evolution of these tumors bears striking resemblance to the human disease, possessing a proliferative stromal component and ductal lesions with a propensity to advance to a poorly differentiated state. These findings in the mouse provide experimental support for the widely accepted model of human pancreatic adenocarcinoma in which activated KRAS serves to initiate PanIN lesions, and the INK4A/ARF tumor suppressors function to constrain the malignant conversion of these PanIN lesions into lethal ductal adenocarcinoma. This faithful mouse model may permit the systematic analysis of genetic lesions implicated in the human disease and serve as a platform for the identification of early disease markers and for the efficient testing of novel therapies. PMID:14681207

  3. Immersion and dry scanner extensions for sub-10nm production nodes

    NASA Astrophysics Data System (ADS)

    Weichselbaum, Stefan; Bornebroek, Frank; de Kort, Toine; Droste, Richard; de Graaf, Roelof F.; van Ballegoij, Rob; Botter, Herman; McLaren, Matthew G.; de Boeij, Wim P.

    2015-03-01

    Progressing towards the 10nm and 7nm imaging node, pattern-placement and layer-to-layer overlay requirements keep on scaling down and drives system improvements in immersion (ArFi) and dry (ArF/KrF) scanners. A series of module enhancements in the NXT platform have been introduced; among others, the scanner is equipped with exposure stages with better dynamics and thermal control. Grid accuracy improvements with respect to calibration, setup, stability, and layout dependency tighten MMO performance and enable mix and match scanner operation. The same platform improvements also benefit focus control. Improvements in detectability and reproducibility of low contrast alignment marks enhance the alignment solution window for 10nm logic processes and beyond. The system's architecture allows dynamic use of high-order scanner optimization based on advanced actuators of projection lens and scanning stages. This enables a holistic optimization approach for the scanner, the mask, and the patterning process. Productivity scanner design modifications esp. stage speeds and optimization in metrology schemes provide lower layer costs for customers using immersion lithography as well as conventional dry technology. Imaging, overlay, focus, and productivity data is presented, that demonstrates 10nm and 7nm node litho-capability for both (immersion & dry) platforms.

  4. Preparation of metal oxide thin films using coating photolysis process with ArF excimer laser

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Tetsuo; Watanabe, Akio; Imai, Yoji; Niino, Hiroyuki; Yabe, Akira; Yamaguchi, Iwao; Manabe, Takaaki; Kumagai, Toshiya; Mizuta, Susumu

    2000-11-01

    The preparation of metal oxide thin films have been developed using the metalorganic (MO) compounds coating photolysis process with ArF excimer laser irradiation at room temperature. The effect of the starting materials and irradiation method on the product films was investigated by FT-IR, UV, XRD and SEM. It was found that metal acetylacetonates or metal 2-ethylhexanoate was effective as the starting materials. When using metal acetylacetonates as the starting materials, crystallized TiO2, In2O3 and ZrO2 were obtained with ArF laser irradiation at 50 mJ/cm2 at a repetition rate of 5 Hz for 5 min. When using An-acac, Fe, Sn, or In 2-ethylhexanoate as the starting material, a two-step process consisting of both preliminary weak (10mJ/cm2) and sufficiently strong irradiation (50mJ/cm2) was found to be effective for obtaining crystallized ZnO, Fe2O3, SnO2 and In2O3 films. In addition, crystallized complex oxide thin films such as ITO, PbTo3 and PbZrO3 were successfully obtained from the metal acetylacetonates or metal 2-ethylhexanoate using MO coating photolysis process. Patterned metal oxide thin films were also obtained by the ArF laser irradiation through the photomask, followed by leaching with solvents. The crystallization mechanism was discussed from the point of view of the photochemical reaction and photothermal reaction.

  5. The correlation between ArF resist dispense volume and surface tension

    NASA Astrophysics Data System (ADS)

    Kuo, Tung-Chang

    2013-04-01

    Resist spin coating has already been applied to IC industry for a very long time. Uniform spin coat of photoresist has been demonstrated on 12" wafers with conventional 6" and 8" methods. Meanwhile, resist dispense volume reduction has also been widely studied and investigated. In our paper, we focus on the physical properties of photoresist and prewet solvent. We try to figure out the interfacial behavior/mechanism between ArF resist and its related pre-wet solvent by systematic methods and DOE splits. In the experiments, different ArF resists among various solvent systems and two distinct pre-wet systems are tested and researched. Certain ArF resists generate smaller dispense volume compared with other PRs even under the same process condition. Eventually, from the splits we find out the trend which correlates to the interaction between resist and pre-wet solvent. The trend proves that our hypothesis is correct. The conclusion will contribute to our future resist selection. The conclusion will also provide new resist design concept to resist vendors. Basic studies and experiments are carried out under our limited resources, equipment and time. We have tried our best to find out the mechanism and have proved it.

  6. Skp2 targeting suppresses tumorigenesis by Arf-p53-independent cellular senescence

    PubMed Central

    Lin, Hui-Kuan; Chen, Zhenbang; Wang, Guocan; Nardella, Caterina; Lee, Szu-Wei; Chan, Chia-Hsin; Yang, Wei-Lei; Wang, Jing; Egia, Ainara; Nakayama, Keiichi I.; Cordon-Cardo, Carlos; Teruya-Feldstein, Julie; Pandolfi, Pier Paolo

    2010-01-01

    Cellular senescence has been recently shown to play an important role in opposing tumour initiation and promotion. Senescence induced by oncogenes or loss of tumour suppressor genes is thought to critically dependent on the induction of the p19Arf-p53 pathway. The Skp2 E3-ubiquitin ligase can act as a proto-oncogene and its aberrant overexpression is frequently observed in human cancers. Here we show that although Skp2 inactivation on its own does not induce cellular senescence, aberrant proto-oncogenic signals as well as inactivation of tumour suppressor genes do trigger a potent, tumor-suppressive senescence response in mice and cells devoid of Skp2. Notably, Skp2 inactivation and oncogenic stress driven senescence neither elicits activation of the p19Arf-p53 pathway nor DNA damage, but instead depends on ATF4, p27, and p21. We further demonstrate that genetic Skp2 inactivation evokes cellular senescence even in oncogenic conditions in which the p19Arf/p53 response is impaired, whereas a Skp2-SCF complex inhibitor can trigger cellular senescence in p53/PTEN deficient cells and tumour regression in preclinical studies. Our findings therefore provide proof of principle evidence that Skp2 pharmacological inhibition may represent a general approach for cancer prevention and therapy. PMID:20237562

  7. Establishing epithelial glandular polarity: interlinked roles for ARF6, Rac1, and the matrix microenvironment.

    PubMed

    Monteleon, Christine L; Sedgwick, Alanna; Hartsell, Alyssa; Dai, Michael; Whittington, Catherine; Voytik-Harbin, Sherry; D'Souza-Schorey, Crislyn

    2012-12-01

    Epithelial cysts comprise the structural units of the glandular epithelium. Although glandular inversion in epithelial tumors is thought to be a potential mechanism for the establishment of metastatic disease, little is known about the morphogenic cues and signaling pathways that govern glandular polarity and organization. Using organotypic cultures of Madin-Darby canine kidney cells in reconstituted basement membrane, we show that cellular depletion of the small GTP-binding protein ARF6 promotes the formation of inverted cysts, wherein the apical cell membrane faces the cyst exterior, and the basal domain faces the central lumen, while individual cell polarity is maintained. These cysts are also defective in interactions with laminin at the cyst-matrix interface. This inversion of glandular orientation is accompanied by Rac1 inactivation during early cystogenesis, and temporal activation of Rac1 is sufficient to recover the normal cyst phenotype. In an unnatural collagen I microenvironment, ARF6-depleted, inverted epithelial cysts exhibit some loss of cell polarity, a marked increase in Rho activation and Rac1 inactivation, and striking rearrangement of the surrounding collagen I matrix. These studies demonstrate the importance of ARF6 as a critical determinant of glandular orientation and the matrix environment in dictating structural organization of epithelial cysts.

  8. Arf6 controls retromer traffic and intracellular cholesterol distribution via a phosphoinositide-based mechanism

    PubMed Central

    Marquer, Catherine; Tian, Huasong; Yi, Julie; Bastien, Jayson; Dall'Armi, Claudia; Yang-Klingler, YoungJoo; Zhou, Bowen; Chan, Robin Barry; Di Paolo, Gilbert

    2016-01-01

    Small GTPases play a critical role in membrane traffic. Among them, Arf6 mediates transport to and from the plasma membrane, as well as phosphoinositide signalling and cholesterol homeostasis. Here we delineate the molecular basis for the link between Arf6 and cholesterol homeostasis using an inducible knockout (KO) model of mouse embryonic fibroblasts (MEFs). We find that accumulation of free cholesterol in the late endosomes/lysosomes of Arf6 KO MEFs results from mistrafficking of Niemann–Pick type C protein NPC2, a cargo of the cation-independent mannose-6-phosphate receptor (CI-M6PR). This is caused by a selective increase in an endosomal pool of phosphatidylinositol-4-phosphate (PI4P) and a perturbation of retromer, which controls the retrograde transport of CI-M6PR via sorting nexins, including the PI4P effector SNX6. Finally, reducing PI4P levels in KO MEFs through independent mechanisms rescues aberrant retromer tubulation and cholesterol mistrafficking. Our study highlights a phosphoinositide-based mechanism for control of cholesterol distribution via retromer. PMID:27336679

  9. Effect of myristoylated N-terminus of Arf1 on the bending rigidity of phospholipid membranes

    NASA Astrophysics Data System (ADS)

    Burrola Gabilondo, Beatriz; Zhou, Hernan; Randazzo, Paul A.; Losert, Wolfgang

    2010-03-01

    The protein Arf1 is part of the COPI vesicle transport process from the Golgi to the ER. It binds to membranes via a myristoylated N-terminus and it has been shown to tubulate Large Unilamellar Vesicles. The effect of the N-terminus of Arf1 on physical properties of membranes has not been studied, with the exception of curvature. We previously found that the myristoylated N-terminus increases the packing of the lipid molecules, but has no effect on the lateral mobility. We tested the hypothesis that myristoylated peptides affect the bending rigidity of phospholipid Giant Unilamellar Vesicles (GUV). We use optical tweezers to pull tethers from GUV and measure the force of pulling the tether, as well as the retraction speed of the tether once it is released. We also used flicker spectroscopy to estimate the values of the mechanical properties of GUV. We will present results of the force and tether retraction measurements, as well as mechanical properties estimates from flicker, for GUV in the presence of varying concentrations of myristoylated and non-myristoylated N-terminus of Arf1, and compare these with measurements for GUV in the absence of peptide.

  10. Challenges of 29nm half-pitch NAND Flash STI patterning with 193nm dry lithography and self-aligned double patterning

    NASA Astrophysics Data System (ADS)

    Chiu, M. C.; Lin, Benjamin Szu-Min; Tsai, M. F.; Chang, Y. S.; Yeh, M. H.; Ying, T. H.; Ngai, Chris; Jin, Jaklyn; Yuen, Stephen; Huang, Sem; Chen, Yongmei; Miao, Liyan; Tai, Kevin; Conley, Amiad; Liu, Ian

    2008-11-01

    High NA (1.35) Immersion litho runs into the fundamental limit of printing at 40-45nm half pitch (HP). The next generation EUVL tool is known to be ready not until year 2012. Double patterning (DP) technology has been identified as the extension of optical photolithography technologies to 3xnm and 2xnm half-pitch for the low k1 regime to fill in the gap between Immersion lithography and EUVL. Self Aligned Double Patterning (SADP) Technology utilized mature process technology to reduce risk and faster time to market to support the continuation of Moore's Law of Scaling to reduce the cost/function. SADP uses spacer to do the pitch splitting bypass the conventional double patterning (e.g. Litho-Freeze-Litho-Etch (LFLE), or Litho-Etch-Litho-Etch (LELE)) overlay problem. Having a tight overlay performance is extremely critical for NAND Flash manufacturers to achieve a fast yield ramp in production. This paper describes the challenges and accomplishment of a Line-By-Spacer (LBS) SADP scheme to pattern the 29nm half-pitch NAND Flash STI application. A 193nm Dry lithography was chosen to pattern on top of the amorphous carbon (a-C) film stack. The resist pattern will be transferred on the top a-C core layer follow by spacer deposition and etch to achieve the pitch splitting. Then the spacer will be used to transfer to the bottom a-C universal hardmask. This high selectivity a-C hardmask will be used to transfer the 29nm half-pitch pattern to the STI. Good within wafer CD uniformity (CDU) <2nm and line width roughness (LWR) <2nm for the 29nm half-pitch NAND FLASH STI were demonstrated as the benefits using double amorphous carbon hardmask layers. The relationships among the photoresist CDs, CD trimming , as-deposited spacer film thickness, spacer width and the final STI line/core space/gap space CDs will also be discussed in this paper since patterning is combining both lithography performance with CVD and Etch process performance. Film selection for amorphous carbon and

  11. Reflective electron beam lithography: lithography results using CMOS controlled digital pattern generator chip

    NASA Astrophysics Data System (ADS)

    Gubiotti, Thomas; Sun, Jeff Fuge; Freed, Regina; Kidwingira, Francoise; Yang, Jason; Bevis, Chris; Carroll, Allen; Brodie, Alan; Tong, William M.; Lin, Shy-Jay; Wang, Wen-Chuan; Haspeslagh, Luc; Vereecke, Bart

    2013-03-01

    Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 10 nm logic (16 nm half pitch) technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) technology targeting high-volume 10 nm logic node performance. REBL uses a novel multi-column wafer writing system combined with an advanced stage architecture to enable the throughput and resolution required for a NGL system. Using a CMOS Digital Pattern Generator (DPG) chip with over one million microlenses, the system is capable of maskless printing of arbitrary patterns with pixel redundancy and pixel-by-pixel grayscaling at the wafer. Electrons are generated in a flood beam via a thermionic cathode at 50-100 keV and decelerated to illuminate the DPG chip. The DPG-modulated electron beam is then reaccelerated and demagnified 80-100x onto the wafer to be printed. Previously, KLA-Tencor reported on the development progress of the REBL tool for maskless lithography at and below the 10 nm logic technology node. Since that time, the REBL team has made good progress towards developing the REBL system and DPG for direct write lithography. REBL has been successful in manufacturing a CMOS controlled DPG chip with a stable charge drain coating and with all segments functioning. This DPG chip consists of an array of over one million electrostatic lenslets that can be switched on or off via CMOS voltages to pattern the flood electron beam. Testing has proven the validity of the design with regards to lenslet performance, contrast, lifetime, and pattern scrolling. This chip has been used in the REBL demonstration platform system for lithography on a moving stage in both PMMA and chemically amplified resist. Direct imaging of the aerial image has also been performed by magnifying the pattern at the wafer plane via a mag stack onto a YAG imaging screen. This paper will discuss the chip design improvements and new charge drain coating that have resulted in a

  12. Learning Relative Motion Concepts in Immersive and Non-Immersive Virtual Environments

    ERIC Educational Resources Information Center

    Kozhevnikov, Michael; Gurlitt, Johannes; Kozhevnikov, Maria

    2013-01-01

    The focus of the current study is to understand which unique features of an immersive virtual reality environment have the potential to improve learning relative motion concepts. Thirty-seven undergraduate students learned relative motion concepts using computer simulation either in immersive virtual environment (IVE) or non-immersive desktop…

  13. Le Point sur L'immersion au Canada (The Argument for...Immersion in Canada).

    ERIC Educational Resources Information Center

    Rebuffot, Jacques

    A discussion of French immersion education in Canada begins with a general examination of language immersion, including the historical context and social climate from which the immersion approach has grown in Canada, its beginnings in Quebec and spread throughout Canada, and the status of the approach in the United States, a number of European…

  14. DUV water immersion technology extends linearity: first results from the new 65nm node CD metrology system LWM500 WI

    NASA Astrophysics Data System (ADS)

    Hillmann, Frank; Dobereiner, Stefan; Gittinger, Christian; Reiter, Richard; Falk, Gunther; Bruck, Hans-Jurgen; Scheuring, Gerd; Bosser, Artur; Heiden, Michael; Hoppen, Gerhard; Sulik, Wolfgang; Vollrath, Wolfgang

    2005-06-01

    The increased requirements on reticles for the 65nm technology node with respect to CD homogeneity and CD mean to target requirements call for a metrology system with adequate measurement performance. We report on the new water immersion technique and the system concept of the worlds first optical CD metrology system based on this technology. The core of it is a new DUV immersion objective with a NA of 1.2, using illumination at a wavelength of 248nm. The largest challenge of the water immersion technology was the fluid handling. The key compo-nents, a water injection and removal unit, developed by MueTec, solve this issue. To avoid contaminations the purified DI water is micro-filtered. An environmental chamber guarantees extremely stable measurement conditions. The advantages of optical CD measurements in transmitted light compared to CD-SEM is shown. With this system, already installed, excellent results for short- and longterm repeatability for both linewidth and contact measurements were achieved on COG, KrF HT and ArF HT masks. The linearity range of the system is extended down to 220nm. A comparison of CD measurements between the different tool generations such as the Leica LWM250/270 DUV at 248nm with a NA of 0.9 is shown. An outlook on the future potentials of optical mask CD metrology finalises this report.

  15. MUC1-ARF-A Novel MUC1 Protein That Resides in the Nucleus and Is Expressed by Alternate Reading Frame Translation of MUC1 mRNA.

    PubMed

    Chalick, Michael; Jacobi, Oded; Pichinuk, Edward; Garbar, Christian; Bensussan, Armand; Meeker, Alan; Ziv, Ravit; Zehavi, Tania; Smorodinsky, Nechama I; Hilkens, John; Hanisch, Franz-Georg; Rubinstein, Daniel B; Wreschner, Daniel H

    2016-01-01

    Translation of mRNA in alternate reading frames (ARF) is a naturally occurring process heretofore underappreciated as a generator of protein diversity. The MUC1 gene encodes MUC1-TM, a signal-transducing trans-membrane protein highly expressed in human malignancies. Here we show that an AUG codon downstream to the MUC1-TM initiation codon initiates an alternate reading frame thereby generating a novel protein, MUC1-ARF. MUC1-ARF, like its MUC1-TM 'parent' protein, contains a tandem repeat (VNTR) domain. However, the amino acid sequence of the MUC1-ARF tandem repeat as well as N- and C- sequences flanking it differ entirely from those of MUC1-TM. In vitro protein synthesis assays and extensive immunohistochemical as well as western blot analyses with MUC1-ARF specific monoclonal antibodies confirmed MUC1-ARF expression. Rather than being expressed at the cell membrane like MUC1-TM, immunostaining showed that MUC1-ARF protein localizes mainly in the nucleus: Immunohistochemical analyses of MUC1-expressing tissues demonstrated MUC1-ARF expression in the nuclei of secretory luminal epithelial cells. MUC1-ARF expression varies in different malignancies. While the malignant epithelial cells of pancreatic cancer show limited expression, in breast cancer tissue MUC1-ARF demonstrates strong nuclear expression. Proinflammatory cytokines upregulate expression of MUC1-ARF protein and co-immunoprecipitation analyses demonstrate association of MUC1-ARF with SH3 domain-containing proteins. Mass spectrometry performed on proteins coprecipitating with MUC1-ARF demonstrated Glucose-6-phosphate 1-dehydrogenase (G6PD) and Dynamin 2 (DNM2). These studies not only reveal that the MUC1 gene generates a previously unidentified MUC1-ARF protein, they also show that just like its 'parent' MUC1-TM protein, MUC1-ARF is apparently linked to signaling and malignancy, yet a definitive link to these processes and the roles it plays awaits a precise identification of its molecular functions

  16. Game engines and immersive displays

    NASA Astrophysics Data System (ADS)

    Chang, Benjamin; Destefano, Marc

    2014-02-01

    While virtual reality and digital games share many core technologies, the programming environments, toolkits, and workflows for developing games and VR environments are often distinct. VR toolkits designed for applications in visualization and simulation often have a different feature set or design philosophy than game engines, while popular game engines often lack support for VR hardware. Extending a game engine to support systems such as the CAVE gives developers a unified development environment and the ability to easily port projects, but involves challenges beyond just adding stereo 3D visuals. In this paper we outline the issues involved in adapting a game engine for use with an immersive display system including stereoscopy, tracking, and clustering, and present example implementation details using Unity3D. We discuss application development and workflow approaches including camera management, rendering synchronization, GUI design, and issues specific to Unity3D, and present examples of projects created for a multi-wall, clustered, stereoscopic display.

  17. Initiation of immersed granular avalanches

    NASA Astrophysics Data System (ADS)

    Mutabaruka, Patrick; Delenne, Jean-Yves; Soga, Kenichi; Radjai, Farhang

    2014-05-01

    By means of coupled molecular dynamics-computational fluid dynamics simulations, we analyze the initiation of avalanches in a granular bed of spherical particles immersed in a viscous fluid and inclined above its angle of repose. In quantitative agreement with experiments, we find that the bed is unstable for a packing fraction below 0.59 but is stabilized above this packing fraction by negative excess pore pressure induced by the effect of dilatancy. From detailed numerical data, we explore the time evolution of shear strain, packing fraction, excess pore pressures, and granular microstructure in this creeplike pressure redistribution regime, and we show that they scale excellently with a characteristic time extracted from a model based on the balance of granular stresses in the presence of a negative excess pressure and its interplay with dilatancy. The cumulative shear strain at failure is found to be ≃0.2, in close agreement with the experiments, irrespective of the initial packing fraction and inclination angle. Remarkably, the avalanche is triggered when dilatancy vanishes instantly as a result of fluctuations while the average dilatancy is still positive (expanding bed) with a packing fraction that declines with the initial packing fraction. Another nontrivial feature of this creeplike regime is that, in contrast to dry granular materials, the internal friction angle of the bed at failure is independent of dilatancy but depends on the inclination angle, leading therefore to a nonlinear dependence of the excess pore pressure on the inclination angle. We show that this behavior may be described in terms of the contact network anisotropy, which increases with a nearly constant connectivity and levels off at a value (critical state) that increases with the inclination angle. These features suggest that the behavior of immersed granular materials is controlled not only directly by hydrodynamic forces acting on the particles but also by the influence of the

  18. Initiation of immersed granular avalanches.

    PubMed

    Mutabaruka, Patrick; Delenne, Jean-Yves; Soga, Kenichi; Radjai, Farhang

    2014-05-01

    By means of coupled molecular dynamics-computational fluid dynamics simulations, we analyze the initiation of avalanches in a granular bed of spherical particles immersed in a viscous fluid and inclined above its angle of repose. In quantitative agreement with experiments, we find that the bed is unstable for a packing fraction below 0.59 but is stabilized above this packing fraction by negative excess pore pressure induced by the effect of dilatancy. From detailed numerical data, we explore the time evolution of shear strain, packing fraction, excess pore pressures, and granular microstructure in this creeplike pressure redistribution regime, and we show that they scale excellently with a characteristic time extracted from a model based on the balance of granular stresses in the presence of a negative excess pressure and its interplay with dilatancy. The cumulative shear strain at failure is found to be ≃ 0.2, in close agreement with the experiments, irrespective of the initial packing fraction and inclination angle. Remarkably, the avalanche is triggered when dilatancy vanishes instantly as a result of fluctuations while the average dilatancy is still positive (expanding bed) with a packing fraction that declines with the initial packing fraction. Another nontrivial feature of this creeplike regime is that, in contrast to dry granular materials, the internal friction angle of the bed at failure is independent of dilatancy but depends on the inclination angle, leading therefore to a nonlinear dependence of the excess pore pressure on the inclination angle. We show that this behavior may be described in terms of the contact network anisotropy, which increases with a nearly constant connectivity and levels off at a value (critical state) that increases with the inclination angle. These features suggest that the behavior of immersed granular materials is controlled not only directly by hydrodynamic forces acting on the particles but also by the influence of the

  19. Loss of p14(ARF) confers resistance to heat shock- and oxidative stress-mediated cell death by upregulating β-catenin.

    PubMed

    Damalas, Alexander; Velimezi, Georgia; Kalaitzakis, Alexander; Liontos, Michalis; Papavassiliou, Athanasios G; Gorgoulis, Vassilis; Angelidis, Charalampos

    2011-04-15

    The p14(ARF) is a key tumor suppressor induced mainly by oncogenic stimuli. Although p14(ARF) does not seem to respond to DNA damage, there are very few data regarding its role in other forms of stress, such as heat shock (HS) and oxidative stress (OS). Here, we report that suppression of p14(ARF) increased resistance to cell death when cells were treated with H(2) O(2) or subjected to HS. In this setting, protection from cell death was mediated by elevated levels and activity of β-catenin, as downregulation of β-catenin alleviated the protective role of p14(ARF) silencing. Moreover, Hsp70 was shown to regulate β-catenin protein levels by interacting with p14(ARF) , suggesting that Hsp70, p14(ARF) and β-catenin form a regulatory network. This novel pathway triggers cell death signals when cells are exposed to HS and OS.

  20. Sub-10 nm patterning using EUV interference lithography.

    PubMed

    Päivänranta, Birgit; Langner, Andreas; Kirk, Eugenie; David, Christian; Ekinci, Yasin

    2011-09-16

    Extreme ultraviolet (EUV) lithography is currently considered as the leading technology for high-volume manufacturing below sub-20 nm feature sizes. In parallel, EUV interference lithography based on interference transmission gratings has emerged as a powerful tool for industrial and academic research. In this paper, we demonstrate nanopatterning with sub-10 nm resolution using this technique. Highly efficient and optimized molybdenum gratings result in resolved line/space patterns down to 8 nm half-pitch and show modulation down to 6 nm half-pitch. These results show the performance of optical nanopatterning in the sub-10 nm range and currently mark the record for photon-based lithography. Moreover, an efficient phase mask completely suppressing the zeroth-order diffraction and providing 50 nm line/space patterns over large areas is evaluated. Such efficient phase masks pave the way towards table-top EUV interference lithography systems.

  1. Development of motorized plasma lithography for cell patterning.

    PubMed

    Deguchi, Shinji; Nagasawa, Yohei; Saito, Akira C; Matsui, Tsubasa S; Yokoyama, Sho; Sato, Masaaki

    2014-03-01

    The micropatterning of cells, which restricts the adhesive regions on the substrate and thus controls cell geometry, is used to study mechanobiology-related cell functions. Plasma lithography is a means of providing such patterns and uses a spatially-selective plasma treatment. Conventional plasma lithography employs a positionally-fixed mask with which the geometry of the patterns is determined and thus is not suited for producing on-demand geometries of patterns. To overcome this, we have manufactured a new device with a motorized mask mounted in a vacuum chamber of a plasma generator, which we designate motorized plasma lithography. Our pilot tests indicate that various pattern geometries can be obtained with the control of a shielding mask during plasma treatment. Our approach can thus omit the laborious process of preparing photolithographically microfabricated masks required for the conventional plasma lithography.

  2. Immersive virtual reality simulations in nursing education.

    PubMed

    Kilmon, Carol A; Brown, Leonard; Ghosh, Sumit; Mikitiuk, Artur

    2010-01-01

    This article explores immersive virtual reality as a potential educational strategy for nursing education and describes an immersive learning experience now being developed for nurses. This pioneering project is a virtual reality application targeting speed and accuracy of nurse response in emergency situations requiring cardiopulmonary resuscitation. Other potential uses and implications for the development of virtual reality learning programs are discussed.

  3. Libraries of La Pocatiere: French Immersion Programs

    ERIC Educational Resources Information Center

    Kuntz, Patricia, S.

    2005-01-01

    Many times summer language immersion administrators and instructors overlook the rich collections housed in various town libraries. Students of French immersion programs have an opportunity to utilize local libraries. This essay describes the facilities and services of five libraries in La Pocatiere, Quebec. A series of interviews of librarians…

  4. The Balancing Act of Bilingual Immersion

    ERIC Educational Resources Information Center

    Hadi-Tabassum, Samina

    2005-01-01

    Hadi-Tabassum believes having a separate life context for each language she learned in childhood enabled her to switch easily among five different tongues. She states that the success of dual immersion bilingual programs is largely dependent on whether they immerse students in each of the involved languages separately and help students have a…

  5. Wedge immersed thermistor bolometer measures infrared radiation

    NASA Technical Reports Server (NTRS)

    Dreyfus, M. G.

    1965-01-01

    Wedge immersed-thermistor bolometer measures infrared radiation in the atmosphere. The thermistor flakes are immersed by optical contact on a wedge-shaped germanium lens whose narrow dimension is clamped between two complementary wedge-shaped germanium blocks bonded with a suitable adhesive.

  6. The Two-Way Immersion Toolkit

    ERIC Educational Resources Information Center

    Howard, Elizabeth; Sugarman, Julie; Perdomo, Marleny; Adger, Carolyn Temple

    2005-01-01

    This Toolkit is meant to be a resource for teachers, parents, and administrators involved with two-way immersion (TWI) programs, particularly those at the elementary level. Two-way immersion is a form of dual language instruction that brings together students from two native language groups for language, literacy, and academic content instruction…

  7. Immersive 3D Geovisualization in Higher Education

    ERIC Educational Resources Information Center

    Philips, Andrea; Walz, Ariane; Bergner, Andreas; Graeff, Thomas; Heistermann, Maik; Kienzler, Sarah; Korup, Oliver; Lipp, Torsten; Schwanghart, Wolfgang; Zeilinger, Gerold

    2015-01-01

    In this study, we investigate how immersive 3D geovisualization can be used in higher education. Based on MacEachren and Kraak's geovisualization cube, we examine the usage of immersive 3D geovisualization and its usefulness in a research-based learning module on flood risk, called GEOSimulator. Results of a survey among participating students…

  8. Astronomical large Ge immersion grating by Canon

    NASA Astrophysics Data System (ADS)

    Sukegawa, Takashi; Suzuki, Takeshi; Kitamura, Tsuyoshi

    2016-07-01

    Immersion grating is a powerful optical device for thee infrared high-resolution spectroscope. Germanium (GGe) is the best material for a mid-infrared immersion grating because of Ge has very large reflective index (n=4.0). On the other hands, there is no practical Ge immersion grating under 5umm use. It was very difficult for a fragile IR crystal to manufacture a diffraction grating precisely. Our original free-forming machine has accuracy of a few nano-meter in positioning and stability. We already fabricated the large CdZnTe immersion grating. (Sukegawa et al. (2012), Ikeda et al. (2015)) Wee are developing Ge immersion grating that can be a good solution for high-resolution infrared spectroscopy with the large ground-based/space telescopes. We succeeded practical Ge immersion grating with the grooved area off 75mm (ruled direction) x 119mm (grove width) and the blaze angle of 75 degrees. Our astronomical large Ge immersion grating has the grooved area of 155mm (ruled direction) x 41mmm (groove width) and groove pitch off 91.74um. We also report optical performance of astronomical large Ge immersion grating with a metal coating on the diffraction surface.

  9. Social Interaction Development through Immersive Virtual Environments

    ERIC Educational Resources Information Center

    Beach, Jason; Wendt, Jeremy

    2014-01-01

    The purpose of this pilot study was to determine if participants could improve their social interaction skills by participating in a virtual immersive environment. The participants used a developing virtual reality head-mounted display to engage themselves in a fully-immersive environment. While in the environment, participants had an opportunity…

  10. Bringing Chinese Immersion to Western Massachusetts

    ERIC Educational Resources Information Center

    Wang, Kathleen

    2009-01-01

    This article describes the Pioneer Valley Chinese Immersion Charter School (PVCICS), a regional public charter school in western Massachusetts, which opened in 2007 and the only Chinese immersion school in New England. The school draws students from over twenty-five towns and cities in a predominantly rural area of Massachusetts that includes the…

  11. Research on evaluation techniques for immersive multimedia

    NASA Astrophysics Data System (ADS)

    Hashim, Aslinda M.; Romli, Fakaruddin Fahmi; Zainal Osman, Zosipha

    2013-03-01

    Nowadays Immersive Multimedia covers most usage in tremendous ways, such as healthcare/surgery, military, architecture, art, entertainment, education, business, media, sport, rehabilitation/treatment and training areas. Moreover, the significant of Immersive Multimedia to directly meet the end-users, clients and customers needs for a diversity of feature and purpose is the assembly of multiple elements that drive effective Immersive Multimedia system design, so evaluation techniques is crucial for Immersive Multimedia environments. A brief general idea of virtual environment (VE) context and `realism' concept that formulate the Immersive Multimedia environments is then provided. This is followed by a concise summary of the elements of VE assessment technique that is applied in Immersive Multimedia system design, which outlines the classification space for Immersive Multimedia environments evaluation techniques and gives an overview of the types of results reported. A particular focus is placed on the implications of the Immersive Multimedia environments evaluation techniques in relation to the elements of VE assessment technique, which is the primary purpose of producing this research. The paper will then conclude with an extensive overview of the recommendations emanating from the research.

  12. Evolution in the concentration of activities in lithography

    NASA Astrophysics Data System (ADS)

    Levinson, Harry J.

    2016-03-01

    From a perusal of the proceedings of the SPIE Advanced Lithography Symposium, the progression of new concepts in lithographic technology can be seen. A new idea first appears in a few papers, and over time, there is an increase in the number of papers on the same topic. Eventually the method becomes commonplace, and the number of papers on the topic declines, as the idea becomes part of our industry's working knowledge. For example, one or two papers on resolution enhancement techniques (RETs) appeared in the proceedings of the Optical Microlithography Conference in 1989 and 1990. By 1994, the total number of papers had increased to 35. Early lithographers focused on practical issues, such as adhesion promotion and resist edge bead. The introduction of simulation software brought on the next era of lithography. This was followed by a period of time in which RETs were developed and brought to maturity. The introduction of optical proximity corrections (OPC) initiated the next major era of lithography. The traditional path for scaling by using shorter wavelengths, decreasing k1 and increasing numerical aperture has given way to the current era of optical multiple patterning and lithography-design co-optimization. There has been sufficient activity in EUV lithography R and D to justify a separate EUV Lithography Conference as part of the annual Advanced Lithography Symposium. Each era builds on the cumulative knowledge gained previously. Over time, there have been parallel developments in optics, exposure tools, resist, metrology and mask technology, many of which were associated with changes in the wavelength of light used for leading-edge lithography.

  13. Application of optical CD metrology for alternative lithography

    NASA Astrophysics Data System (ADS)

    Asano, Masafumi; Kawamoto, Akiko; Matsuki, Kazuto; Godny, Stephane; Lin, Tingsheng; Wakamoto, Koichi

    2013-04-01

    Directed self-assembly (DSA) and nanoimprint lithography (NIL) have been widely developed for low-cost nanoscale patterning. Although they are currently regarded as "alternative lithography," some papers show their potential to be candidates for next-generation lithography (NGL). To actualize the potential, the contribution of metrology engineers is necessary. Since the characteristics of the lithography techniques are different from those of conventional lithography, new metrology schemes correlated with each characteristic are required. In DSA of block copolymer (BCP), a guide is needed to control the direction and position of BCP. Therefore, it is necessary to monitor the relationship between the guide and the BCP pattern. Since the depth of guide or the coating thickness variation of BCP over guide influences the behavior of phase separation of BCP, 3D metrology becomes increasingly important. In NIL, residual resist thickness (RLT) underneath the pattern should be measured because its variation affects the CD variation of transferred pattern. 3D metrology is also important in NIL. Optical critical dimension (OCD) metrology will be a powerful tool for 3D metrology. In this work, some applications of OCD for alternative lithography have been studied. For DSA, we have tried to simultaneously monitor the guide and BCP pattern in a DSA-based contact hole shrinking process. Sufficient measurement accuracy for CD and shapes for guide and BCP patterns was achievable. For NIL, sufficient sensitivity to RLT measurement was obtained.

  14. Induction of Non-Apoptotic Cell Death by Activated Ras Requires Inverse Regulation of Rac1 and Arf6

    PubMed Central

    Bhanot, Haymanti; Young, Ashley M.; Overmeyer, Jean H.; Maltese, William A.

    2010-01-01

    Methuosis is a unique form of non-apoptotic cell death triggered by alterations in the trafficking of clathrin-independent endosomes, ultimately leading to extreme vacuolization and rupture of the cell. Methuosis can be induced in glioblastoma cells by expression of constitutively active Ras. This study identifies the small GTPases, Rac1 and Arf6, and the Arf6 GTPase-activating-protein, GIT1, as key downstream components of the signaling pathway underlying Ras-induced methuosis. The extent to which graded expression of active H-Ras(G12V) triggers cytoplasmic vacuolization correlates with the amount of endogenous Rac1 in the active GTP state. Blocking Rac1 activation with the specific Rac inhibitor, EHT 1864, or co-expression of dominant-negative Rac1(T17N), prevents the accumulation of vacuoles induced by H-Ras(G12V). Coincident with Rac1 activation, H-Ras(G12V) causes a decrease in the amount of active Arf6, a GTPase that functions in recycling of clathrin-independent endosomes. The effect of H-Ras(G12V) on Arf6 is blocked by EHT 1864, indicating that the decrease in Arf6-GTP is directly linked to activation of Rac1. Constitutively active Rac1(G12V) interacts with GIT1 in immunoprecipitation assays. Ablation of GIT1 by shRNA prevents the decrease in active Arf6, inhibits vacuolization, and prevents loss of cell viability in cells expressing Rac1(G12V). Together the results suggest that perturbations of endosome morphology associated with Ras-induced methuosis are due to downstream activation of Rac1, combined with reciprocal inactivation of Arf6. The latter appears to be mediated through Rac1 stimulation of GIT1. Further insights into this pathway could suggest opportunities for induction of methuosis in cancers that are resistant to apoptotic cell death. PMID:20713492

  15. RalF-Mediated Activation of Arf6 Controls Rickettsia typhi Invasion by Co-Opting Phosphoinositol Metabolism

    PubMed Central

    Rennoll-Bankert, Kristen E.; Rahman, M. Sayeedur; Guillotte, Mark L.; Lehman, Stephanie S.; Beier-Sexton, Magda; Gillespie, Joseph J.

    2016-01-01

    Rickettsiae are obligate intracellular pathogens that induce their uptake into nonphagocytic cells; however, the events instigating this process are incompletely understood. Importantly, diverse Rickettsia species are predicted to utilize divergent mechanisms to colonize host cells, as nearly all adhesins and effectors involved in host cell entry are differentially encoded in diverse Rickettsia species. One particular effector, RalF, a Sec7 domain-containing protein that functions as a guanine nucleotide exchange factor of ADP-ribosylation factors (Arfs), is critical for Rickettsia typhi (typhus group rickettsiae) entry but pseudogenized or absent from spotted fever group rickettsiae. Secreted early during R. typhi infection, RalF localizes to the host plasma membrane and interacts with host ADP-ribosylation factor 6 (Arf6). Herein, we demonstrate that RalF activates Arf6, a process reliant on a conserved Glu within the RalF Sec7 domain. Furthermore, Arf6 is activated early during infection, with GTP-bound Arf6 localized to the R. typhi entry foci. The regulation of phosphatidylinositol 4-phosphate 5-kinase (PIP5K), which generates PI(4,5)P2, by activated Arf6 is instrumental for bacterial entry, corresponding to the requirement of PI(4,5)P2 for R. typhi entry. PI(3,4,5)P3 is then synthesized at the entry foci, followed by the accumulation of PI(3)P on the short-lived vacuole. Inhibition of phosphoinositide 3-kinases, responsible for the synthesis of PI(3,4,5)P3 and PI(3)P, negatively affects R. typhi infection. Collectively, these results identify RalF as the first bacterial effector to directly activate Arf6, a process that initiates alterations in phosphoinositol metabolism critical for a lineage-specific Rickettsia entry mechanism. PMID:27698019

  16. A glutamic finger in the guanine nucleotide exchange factor ARNO displaces Mg2+ and the beta-phosphate to destabilize GDP on ARF1.

    PubMed Central

    Béraud-Dufour, S; Robineau, S; Chardin, P; Paris, S; Chabre, M; Cherfils, J; Antonny, B

    1998-01-01

    The Sec7 domain of the guanine nucleotide exchange factor ARNO (ARNO-Sec7) is responsible for the exchange activity on the small GTP-binding protein ARF1. ARNO-Sec7 forms a stable complex with the nucleotide-free form of [Delta17]ARF1, a soluble truncated form of ARF1. The crystal structure of ARNO-Sec7 has been solved recently, and a site-directed mutagenesis approach identified a hydrophobic groove and an adjacent hydrophilic loop as the ARF1-binding site. We show that Glu156 in the hydrophilic loop of ARNO-Sec7 is involved in the destabilization of Mg2+ and GDP from ARF1. The conservative mutation E156D and the charge reversal mutation E156K reduce the exchange activity of ARNO-Sec7 by several orders of magnitude. Moreover, [E156K]ARNO-Sec7 forms a complex with the Mg2+-free form of [Delta17]ARF1-GDP without inducing the release of GDP. Other mutations in ARNO-Sec7 and in [Delta17]ARF1 suggest that prominent hydrophobic residues of the switch I region of ARF1 insert into the groove of the Sec7 domain, and that Lys73 of the switch II region of ARF1 forms an ion pair with Asp183 of ARNO-Sec7. PMID:9649435

  17. Successful demonstration of a comprehensive lithography defect monitoring strategy

    NASA Astrophysics Data System (ADS)

    Peterson, Ingrid B.; Breaux, Louis H.; Cross, Andrew; von den Hoff, Michael

    2003-07-01

    This paper describes the validation of the methodology, the model and the impact of an optimized Lithography Defect Monitoring Strategy at two different semiconductor manufacturing factories. The lithography defect inspection optimization was implemented for the Gate Module at both factories running 0.13-0.15μm technologies on 200mm wafers, one running microprocessor and the other memory devices. As minimum dimensions and process windows decrease in the lithography area, new technologies and technological advances with resists and resist systems are being implemented to meet the demands. Along with these new technological advances in the lithography area comes potentially unforeseen defect issues. The latest lithography processes involve new resists in extremely thin, uniform films, exposing the films under conditions of highly optimized focus and illumination, and finally removing the resist completely and cleanly. The lithography cell is defined as the cluster of process equipment that accomplishes the coating process (surface prep, resist spin, edge-bead removal and soft bake), the alignment and exposure, and the developing process (post-exposure bake, develop, rinse) of the resist. Often the resist spinning process involves multiple materials such as BARC (bottom ARC) and / or TARC (top ARC) materials in addition to the resist itself. The introduction of these new materials with the multiple materials interfaces and the tightness of the process windows leads to an increased variety of defect mechanisms in the lithography area. Defect management in the lithography area has become critical to successful product introduction and yield ramp. The semiconductor process itself contributes the largest number and variety of defects, and a significant portion of the total defects originate within the lithography cell. From a defect management perspective, the lithography cell has some unique characteristics. First, defects in the lithography process module have the

  18. Single-photon emitters based on NIR color centers in diamond coupled with solid immersion lenses

    NASA Astrophysics Data System (ADS)

    Monticone, D. Gatto; Forneris, J.; Levi, M.; Battiato, A.; Picollo, F.; Olivero, P.; Traina, P.; Moreva, E.; Enrico, E.; Brida, G.; Degiovanni, I. P.; Genovese, M.; Amato, G.; Boarino, L.

    2014-12-01

    Single-photon sources represent a key enabling technology in quantum optics, and single color centers in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen-vacancy (NV) centers are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centers emitting in the near-infra red (NIR). In the present work, we report on the coupling of native NIR-emitting centers in high-quality single-crystal diamond with solid immersion lens (SIL) structures fabricated by focused ion beam (FIB) lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties.

  19. Fabrication of subwavelength holes using nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Weiss, A.; Besser, J.; Baum, M.; Saupe, R.; Otto, T.; Gessner, T.

    2013-03-01

    Driven by the demand of miniaturized and highly integrated functionalities in the area of photonics and photonic circuits, the metal or plasmon optics has become a promising method for manipulating light at the nanometer scale. Especially the application of periodic sub wavelength hole structures within an opaque metal film on a dielectric substrate holds many advantages for the realization of optical filters, since the variation of the hole diameter and the periodicity allows a selective filter response. This paper is concerned with the modeling, fabrication and characterization of a sub wavelength hole array for surface plasmon enhanced transmission of light [1]. The theoretical backgrounds as well as the basics of the simulation by Finite-Difference Time-Domain (FDTD) are described for the target structure with a hole diameter of 180 nm and a periodicity of 400 nm. By using a double-molding technology via nanoimprint lithography the fabrication of this sub wavelength hole array with a peak wavelength of 470 nm and full width at half maximum of 50 nm from a silicon nanopillar master is demonstrated. In order to ensure the dimensional stability of the molded structures, characterization was consequently done by means of a self made non-contact mode atomic force microscope.

  20. Maskless plasmonic lithography at 22 nm resolution.

    PubMed

    Pan, Liang; Park, Yongshik; Xiong, Yi; Ulin-Avila, Erick; Wang, Yuan; Zeng, Li; Xiong, Shaomin; Rho, Junsuk; Sun, Cheng; Bogy, David B; Zhang, Xiang

    2011-01-01

    Optical imaging and photolithography promise broad applications in nano-electronics, metrologies, and single-molecule biology. Light diffraction however sets a fundamental limit on optical resolution, and it poses a critical challenge to the down-scaling of nano-scale manufacturing. Surface plasmons have been used to circumvent the diffraction limit as they have shorter wavelengths. However, this approach has a trade-off between resolution and energy efficiency that arises from the substantial momentum mismatch. Here we report a novel multi-stage scheme that is capable of efficiently compressing the optical energy at deep sub-wavelength scales through the progressive coupling of propagating surface plasmons (PSPs) and localized surface plasmons (LSPs). Combining this with airbearing surface technology, we demonstrate a plasmonic lithography with 22 nm half-pitch resolution at scanning speeds up to 10 m/s. This low-cost scheme has the potential of higher throughput than current photolithography, and it opens a new approach towards the next generation semiconductor manufacturing.

  1. Coherence management in lithography printing systems

    NASA Astrophysics Data System (ADS)

    Bernasconi, Johana; Scharf, Toralf; Herzig, Hans Peter; Voelkel, Reinhard; Bramati, Arianna

    2016-03-01

    In proximity lithography, interference and diffraction effects arise when printing small features because of the proximity gap. Different techniques are used in order to control and take advantage of these effects. In this paper, the focus is set on the MO Exposure Optics developed to shape the angular spectrum of the exposure light. The MO Exposure Optics contains several elements including microlens arrays that have certain symmetry and sampling. The MO Exposure Optics allows to set the angle of illumination and can be used to define spatial coherence. We study here in detail the influence of different illumination settings on optical proximity correction (OPC) structures. We apply this concept for the first time to a LED illumination. The propagation of light after an optical proximity correction structure is measured by recording aerial images over a distance of up to 60 μm behind the mask with a high resolution microscope setup.1 As an example structure, we investigate here an optical proximity correction structure that is intended to make the edge of a line sharper. Using illumination filter plates that limit the angle of illumination and increase the coherence lead to pronounced interference effects in aerial images as expected. But special settings of the illumination allow to achieve comparable results with much larger illumination angles and higher throughput. We will show examples and analyze the results

  2. Resist profile simulation with fast lithography model

    NASA Astrophysics Data System (ADS)

    He, Yan-Ying; Chou, Chih-Shiang; Tang, Yu-Po; Huang, Wen-Chun; Liu, Ru-Gun; Gau, Tsai-Sheng

    2014-03-01

    A traditional approach to construct a fast lithographic model is to match wafer top-down SEM images, contours and/or gauge CDs with a TCC model plus some simple resist representation. This modeling method has been proven and is extensively used for OPC modeling. As the technology moves forward, this traditional approach has become insufficient in regard to lithography weak point detection, etching bias prediction, etc. The drawback of this approach is from metrology and simulation. First, top-down SEM is only good for acquiring planar CD information. Some 3D metrology such as cross-section SEM or AFM is necessary to obtain the true resist profile. Second, the TCC modeling approach is only suitable for planar image simulation. In order to model the resist profile, full 3D image simulation is needed. Even though there are many rigorous simulators capable of catching the resist profile very well, none of them is feasible for full-chip application due to the tremendous consumption of computational resource. The authors have proposed a quasi-3D image simulation method in the previous study [1], which is suitable for full-chip simulation with the consideration of sidewall angles, to improve the model accuracy of planar models. In this paper, the quasi-3D image simulation is extended to directly model the resist profile with AFM and/or cross-section SEM data. Resist weak points detected by the model generated with this 3D approach are verified on the wafer.

  3. Evaporative Lithography in Open Microfluidic Channel Networks.

    PubMed

    Lone, Saifullah; Zhang, Jia Ming; Vakarelski, Ivan U; Li, Er Qiang; Thoroddsen, Sigurdur T

    2017-03-13

    We demonstrate a direct capillary-driven method based on wetting and evaporation of various suspensions to fabricate regular two-dimensional wires in an open microfluidic channel through continuous deposition of micro- or nanoparticles under evaporative lithography, akin to the coffee-ring effect. The suspension is gently placed in a loading reservoir connected to the main open microchannel groove on a PDMS substrate. Hydrophilic conditions ensure rapid spreading of the suspension from the loading reservoir to fill the entire channel length. Evaporation during the spreading and after the channel is full increases the particle concentration toward the end of the channel. This evaporation-induced convective transport brings particles from the loading reservoir toward the channel end where this flow deposits a continuous multilayered particle structure. The particle deposition front propagates backward over the entire channel length. The final dry deposit of the particles is thereby much thicker than the initial volume fraction of the suspension. The deposition depth is characterized using a 3D imaging profiler, whereas the deposition topography is revealed using a scanning electron microscope. The patterning technology described here is robust and passive and hence operates without an external field. This work may well become a launching pad to construct low-cost and large-scale thin optoelectronic films with variable thicknesses and interspacing distances.

  4. Reflective masks for extreme ultraviolet lithography

    SciTech Connect

    Nguyen, Khanh Bao

    1994-05-01

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 μm wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  5. Pattern collapse mitigation strategies for EUV lithography

    NASA Astrophysics Data System (ADS)

    Goldfarb, Dario L.; Bruce, Robert L.; Bucchignano, James J.; Klaus, David P.; Guillorn, Michael A.; Wu, Chunghsi J.

    2012-03-01

    In this study, a comprehensive approach towards assessing pattern collapse challenges and solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is undertaken. The fundamental forces that drive pattern deformation are reassessed in order to propose a generalized design criterion for EUV photoresists and aqueous surfactanated rinses. Furthermore, ultimate pattern collapse solutions such as solvent drying utilizing pressurized fluids (supercritical CO2) are exemplified for sub-60nm pitch EUV patterning. In parallel, alternative EUV integration schemes that use a metal-based hardmask (MHM) are studied using a specifically tailored self-assembled monolayer (SAM) to prevent delamination-driven pattern collapse due to resist-hardmask interfacial adhesion failure. Finally, the marginal image transfer of 40nm pitched L/S of ultrathin EUV resist into a SiARC-underlayer stack appears to be gated by the EUV resist resolution limit and the reduced film thickness budget. An alternative method for achieving improved postetch line width roughness (LWR) with an ultrathin MHM-based integration scheme is herein demonstrated.

  6. Analysis of the blurring in stencil lithography.

    PubMed

    Vazquez-Mena, O; Villanueva, L G; Savu, V; Sidler, K; Langlet, P; Brugger, J

    2009-10-14

    A quantitative analysis of blurring and its dependence on the stencil-substrate gap and the deposition parameters in stencil lithography, a high resolution shadow mask technique, is presented. The blurring is manifested in two ways: first, the structure directly deposited on the substrate is larger than the stencil aperture due to geometrical factors, and second, a halo of material is formed surrounding the deposited structure, presumably due to surface diffusion. The blurring is studied as a function of the gap using dedicated stencils that allow a controlled variation of the gap. Our results show a linear relationship between the gap and the blurring of the directly deposited structure. In our configuration, with a material source of approximately 5 mm and a source-substrate distance of 1 m, we find that a gap size of approximately 10 microm enlarges the directly deposited structures by approximately 50 nm. The measured halo varies from 0.2 to 3 microm in width depending on the gap, the stencil aperture size and other deposition parameters. We also show that the blurring can be reduced by decreasing the nominal deposition thickness, the deposition rate and the substrate temperature.

  7. Materials for future lithography (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Chang, Seung Wook; Yang, Da; Dai, Junyan; Felix, Nelson; Bratton, Daniel; Tsuchiya, Kousuke; Kwark, Young-Je; Bravo-Vasquez, Juan-Pablo; Ober, Christopher K.; Cao, Heidi B.; Deng, Hai

    2005-05-01

    The demands for high resolution and issues of line edge roughness require a reconsideration of current resist design strategies. In particular, EUV lithography will provide an opportunity to examine new resist concepts including new elemental compositions and low molar mass resists or molecular resists. In the former case, resist compositions incorporating elements such as silicon and boron have been explored for EUV resists and will be described. In an example of the latter case, molecular glass resists have been designed using synthetic architectures in globular and core-arm forms ranging from one to multiple arms. Moreover, our studies include a series of ring and irregularly shaped small molecules modified to give imaging performance. These materials have been explored to improve line edge roughness (LER) compared to common polymer resists. Several examples of polymeric and molecular glass resists will be described. Several compositions showed high glass transition temperatures (Tg) of ~ 120°C and possessed no crystallinity as seen from XRD studies. Negative-tone molecular glass resists with a T-shaped phenolic core structure, 4-[4-[1,1-Bis(4-hydroxyphenyl)ethyl

  8. X-ray lithography using holographic images

    DOEpatents

    Howells, Malcolm R.; Jacobsen, Chris

    1995-01-01

    A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

  9. Smartphone Sensors for Stone Lithography Authentication

    PubMed Central

    Schirripa Spagnolo, Giuseppe; Cozzella, Lorenzo; Papalillo, Donato

    2014-01-01

    Nowadays mobile phones include quality photo and video cameras, access to wireless networks and the internet, GPS assistance and other innovative systems. These facilities open them to innovative uses, other than the classical telephonic communication one. Smartphones are a more sophisticated version of classic mobile phones, which have advanced computing power, memory and connectivity. Because fake lithographs are flooding the art market, in this work, we propose a smartphone as simple, robust and efficient sensor for lithograph authentication. When we buy an artwork object, the seller issues a certificate of authenticity, which contains specific details about the artwork itself. Unscrupulous sellers can duplicate the classic certificates of authenticity, and then use them to “authenticate” non-genuine works of art. In this way, the buyer will have a copy of an original certificate to attest that the “not original artwork” is an original one. A solution for this problem would be to insert a system that links together the certificate and the related specific artwork. To do this it is necessary, for a single artwork, to find unique, unrepeatable, and unchangeable characteristics. In this article we propose an innovative method for the authentication of stone lithographs. We use the color spots distribution captured by means of a smartphone camera as a non-cloneable texture of the specific artworks and an information management system for verifying it in mobility stone lithography. PMID:24811077

  10. Lithography strategy for 65-nm node

    NASA Astrophysics Data System (ADS)

    Borodovsky, Yan A.; Schenker, Richard E.; Allen, Gary A.; Tejnil, Edita; Hwang, David H.; Lo, Fu-Chang; Singh, Vivek K.; Gleason, Robert E.; Brandenburg, Joseph E.; Bigwood, Robert M.

    2002-07-01

    Intel will start high volume manufacturing (HVM) of the 65nm node in 2005. Microprocessor density and performance trends will continue to follow Moore's law and cost-effective patterning solutions capable of supporting it have to be found, demonstrated and developed during 2002-2004. Given the uncertainty regarding the readiness and respective capabilities of 157nm and 193nm lithography to support 65nm technology requirements, Intel is developing both lithographic options and corresponding infrastructure with the intent to use both options in manufacturing. Development and use of dual lithographic options for a given technology node in manufacturing is not a new paradigm for Intel: whenever introduction of a new exposure wavelength presented excessive risk to the manufacturing schedule, Intel developed parallel patterning approaches in time for the manufacturing ramp. Both I-line and 248nm patterning solutions were developed and successfully used in manufacturing of the 350nm node at Intel. Similarly, 248nm and 193nm patterning solutions were fully developed for 130nm node high volume manufacturing.

  11. Metal hierarchical patterning by direct nanoimprint lithography

    PubMed Central

    Radha, Boya; Lim, Su Hui; Saifullah, Mohammad S. M.; Kulkarni, Giridhar U.

    2013-01-01

    Three-dimensional hierarchical patterning of metals is of paramount importance in diverse fields involving photonics, controlling surface wettability and wearable electronics. Conventionally, this type of structuring is tedious and usually involves layer-by-layer lithographic patterning. Here, we describe a simple process of direct nanoimprint lithography using palladium benzylthiolate, a versatile metal-organic ink, which not only leads to the formation of hierarchical patterns but also is amenable to layer-by-layer stacking of the metal over large areas. The key to achieving such multi-faceted patterning is hysteretic melting of ink, enabling its shaping. It undergoes transformation to metallic palladium under gentle thermal conditions without affecting the integrity of the hierarchical patterns on micro- as well as nanoscale. A metallic rice leaf structure showing anisotropic wetting behavior and woodpile-like structures were thus fabricated. Furthermore, this method is extendable for transferring imprinted structures to a flexible substrate to make them robust enough to sustain numerous bending cycles. PMID:23446801

  12. Proximity correction for electron beam lithography

    NASA Astrophysics Data System (ADS)

    Marrian, Christie R.; Chang, Steven; Peckerar, Martin C.

    1996-09-01

    As the critical dimensions required in mask making and direct write by electron beam lithography become ever smaller, correction for proximity effects becomes increasingly important. Furthermore, the problem is beset by the fact that only a positive energy dose can be applied with an electron beam. We discuss techniques such as chopping and dose shifting, which have been proposed to meet the positivity requirement. An alternative approach is to treat proximity correction as an optimization problem. Two such methods, local area dose correction and optimization using a regularizer proportional to the informational entropy of the solution, are compared. A notable feature of the regularized proximity correction is the ability to correct for forward scattering by the generation of a 'firewall' set back from the edge of a feature. As the forward scattering width increases, the firewall is set back farther from the feature edge. The regularized optimization algorithm is computationally time consuming using conventional techniques. However, the algorithm lends itself to a microelectronics integrated circuit coprocessor implementation, which could perform the optimization faster than even the fastest work stations. Scaling the circuit to larger number of pixels is best approached with a hybrid serial/parallel digital architecture that would correct for proximity effects over 108 pixels in about 1 h. This time can be reduced by simply adding additional coprocessors.

  13. Photogrammetric Applications of Immersive Video Cameras

    NASA Astrophysics Data System (ADS)

    Kwiatek, K.; Tokarczyk, R.

    2014-05-01

    The paper investigates immersive videography and its application in close-range photogrammetry. Immersive video involves the capture of a live-action scene that presents a 360° field of view. It is recorded simultaneously by multiple cameras or microlenses, where the principal point of each camera is offset from the rotating axis of the device. This issue causes problems when stitching together individual frames of video separated from particular cameras, however there are ways to overcome it and applying immersive cameras in photogrammetry provides a new potential. The paper presents two applications of immersive video in photogrammetry. At first, the creation of a low-cost mobile mapping system based on Ladybug®3 and GPS device is discussed. The amount of panoramas is much too high for photogrammetric purposes as the base line between spherical panoramas is around 1 metre. More than 92 000 panoramas were recorded in one Polish region of Czarny Dunajec and the measurements from panoramas enable the user to measure the area of outdoors (adverting structures) and billboards. A new law is being created in order to limit the number of illegal advertising structures in the Polish landscape and immersive video recorded in a short period of time is a candidate for economical and flexible measurements off-site. The second approach is a generation of 3d video-based reconstructions of heritage sites based on immersive video (structure from immersive video). A mobile camera mounted on a tripod dolly was used to record the interior scene and immersive video, separated into thousands of still panoramas, was converted from video into 3d objects using Agisoft Photoscan Professional. The findings from these experiments demonstrated that immersive photogrammetry seems to be a flexible and prompt method of 3d modelling and provides promising features for mobile mapping systems.

  14. [Adaptive effects of repeated immersion exposure on the human body].

    PubMed

    Shul'zhenko, E B; Kozlova, V G; Aleksandrova, E A; Kudrin, K A

    1984-01-01

    The effect of intermittent immersion on orthostatic tolerance, fluid-electrolyte metabolism and neuromuscular system was investigated. Control and experimental immersions were used. Experimental immersion was preceded by 12-hour exposure to immersion at night for three times. Experimental immersion was accompanied by reduced renal excretion of fluid, sodium and potassium and normalization of the muscle tone. After experimental immersion orthostatic tolerance approached the control level. The difference in the physiological effects of control and experimental immersions seem to be associated with the capacity of the human body to adapt to immersion, if it is applied intermittently.

  15. Genome-Wide Characterization and Expression Profiling of the AUXIN RESPONSE FACTOR (ARF) Gene Family in Eucalyptus grandis

    PubMed Central

    Yu, Hong; Soler, Marçal; Mila, Isabelle; San Clemente, Hélène; Savelli, Bruno; Dunand, Christophe; Paiva, Jorge A. P.; Myburg, Alexander A.; Bouzayen, Mondher; Grima-Pettenati, Jacqueline; Cassan-Wang, Hua

    2014-01-01

    Auxin is a central hormone involved in a wide range of developmental processes including the specification of vascular stem cells. Auxin Response Factors (ARF) are important actors of the auxin signalling pathway, regulating the transcription of auxin-responsive genes through direct binding to their promoters. The recent availability of the Eucalyptus grandis genome sequence allowed us to examine the characteristics and evolutionary history of this gene family in a woody plant of high economic importance. With 17 members, the E. grandis ARF gene family is slightly contracted, as compared to those of most angiosperms studied hitherto, lacking traces of duplication events. In silico analysis of alternative transcripts and gene truncation suggested that these two mechanisms were preeminent in shaping the functional diversity of the ARF family in Eucalyptus. Comparative phylogenetic analyses with genomes of other taxonomic lineages revealed the presence of a new ARF clade found preferentially in woody and/or perennial plants. High-throughput expression profiling among different organs and tissues and in response to environmental cues highlighted genes expressed in vascular cambium and/or developing xylem, responding dynamically to various environmental stimuli. Finally, this study allowed identification of three ARF candidates potentially involved in the auxin-regulated transcriptional program underlying wood formation. PMID:25269088

  16. High-efficiency diffractive beam splitters surface-structured on submicrometer scale using deep-UV interference lithography.

    PubMed

    Amako, Jun; Sawaki, Daisuke; Fujii, Eiichi

    2009-09-20

    We report highly efficient diffractive beam splitters intended for high-power laser applications. Submicron relief structures that work as an antireflective layer are formed on the surfaces of a splitter to improve its transmitted efficiency. Surface structuring is performed using deep-UV interference lithography and reactive ion etching. As immersed in an index-matching liquid, the resist layer coated on diffractive surfaces is exposed to the interference fringes that are set intersecting the grooves on the surfaces. Rigorously designed structures with a period of 140 nm and a depth of 55 nm are lithographed onto fused-silica splitters. Splitting efficiencies at 266 nm are increased by 8% to compare favorably with a theoretical value, while Fresnel reflections are considerably reduced.

  17. Role of ARF6 in internalization of metal-binding proteins, metallothionein and transferrin, and cadmium-metallothionein toxicity in kidney proximal tubule cells

    SciTech Connect

    Wolff, Natascha A.; Lee, Wing-Kee; Abouhamed, Marouan

    2008-07-01

    Filtered metal-protein complexes, such as cadmium-metallothionein-1 (CdMT-1) or transferrin (Tf) are apically endocytosed partly via megalin/cubilin by kidney proximal tubule (PT) cells where CdMT-1 internalization causes apoptosis. Small GTPase ARF (ADP-ribosylation factor) proteins regulate endocytosis and vesicular trafficking. We investigated roles of ARF6, which has been shown to be involved in internalization of ligands and endocytic trafficking in PT cells, following MT-1/CdMT-1 and Tf uptake by PT cells. WKPT-0293 Cl.2 cells derived from rat PT S1 segment were transfected with hemagglutinin-tagged wild-type (ARF6-WT) or dominant negative (ARF6-T27N) forms of ARF6. Using immunofluorescence, endogenous ARF6 was associated with the plasma membrane (PM) as well as juxtanuclear and co-localized with Rab5a and Rab11 involved in early and recycling endosomal trafficking. Immunofluorescence staining of megalin showed reduced surface labelling in ARF6 dominant negative (ARF6-DN) cells. Intracellular Alexa Fluor 546-conjugated MT-1 uptake was reduced in ARF6-DN cells and CdMT-1 (14.8 {mu}M for 24 h) toxicity was significantly attenuated from 27.3 {+-} 3.9% in ARF6-WT to 11.1 {+-} 4.0% in ARF6-DN cells (n = 6, P < 0.02). Moreover, reduced Alexa Fluor 546-conjugated Tf uptake was observed in ARF-DN cells (75.0 {+-} 4.6% versus 3.9 {+-} 3.9% of ARF6-WT cells, n = 3, P < 0.01) and/or remained near the PM (89.3 {+-} 5. 6% versus 45.2 {+-} 14.3% of ARF6-WT cells, n = 3, P < 0.05). In conclusion, the data support roles for ARF6 in receptor-mediated endocytosis and trafficking of MT-1/Tf to endosomes/lysosomes and CdMT-1 toxicity of PT cells.

  18. Human papillomavirus 16 oncoprotein E7 stimulates UBF1-mediated rDNA gene transcription, inhibiting a p53-independent activity of p14ARF.

    PubMed

    Dichamp, Isabelle; Séité, Paule; Agius, Gérard; Barbarin, Alice; Beby-Defaux, Agnès

    2014-01-01

    High-risk human papillomavirus oncoproteins E6 and E7 play a major role in HPV-related cancers. One of the main functions of E7 is the degradation of pRb, while E6 promotes the degradation of p53, inactivating the p14ARF-p53 pathway. pRb and p14ARF can repress ribosomal DNA (rDNA) transcription in part by targeting the Upstream Binding Factor 1 (UBF1), a key factor in the activation of RNA polymerase I machinery. We showed, through ectopic expression and siRNA silencing of p14ARF and/or E7, that E7 stimulates UBF1-mediated rDNA gene transcription, partly because of increased levels of phosphorylated UBF1, preventing the inhibitory function of p14ARF. Unexpectedly, activation of rDNA gene transcription was higher in cells co-expressing p14ARF and E7, compared to cells expressing E7 alone. We did not find a difference in P-UBF1 levels that could explain this data. However, p14ARF expression induced E7 to accumulate into the nucleolus, where rDNA transcription takes place, providing an opportunity for E7 to interact with nucleolar proteins involved in this process. GST-pull down and co-immunoprecipitation assays showed interactions between p14ARF, UBF1 and E7, although p14ARF and E7 are not able to directly interact. Co-expression of a pRb-binding-deficient mutant (E7C24G) and p14ARF resulted in EC24G nucleolar accumulation, but not in a significant higher activation of rDNA transcription, suggesting that the inactivation of pRb is involved in this phenomenon. Thus, p14ARF fails to prevent E7-mediated UBF1 phosphorylation, but could facilitate nucleolar pRb inactivation by targeting E7 to the nucleolus. While others have reported that p19ARF, the mouse homologue of p14ARF, inhibits some functions of E7, we showed that E7 inhibits a p53-independent function of p14ARF. These results point to a mutually functional interaction between p14ARF and E7 that might partly explain why the sustained p14ARF expression observed in most cervical pre-malignant lesions and

  19. Myristoylation-facilitated binding of the G protein ARF1GDP to membrane phospholipids is required for its activation by a soluble nucleotide exchange factor.

    PubMed

    Franco, M; Chardin, P; Chabre, M; Paris, S

    1996-01-19

    We have investigated the role of N-myristoylation in the activation of bovine ADP-ribosylation factor 1 (ARF1). We previously showed that myristoylation allows some spontaneous GDP-to-GTP exchange to occur on ARF1 at physiological Mg2+ levels in the presence of phospholipid vesicles (Franco, M., Chardin, P., Chabre, M., and Paris, S. (1995) J. Biol. Chem. 270, 1337-1341). Here, we report that this basal nucleotide exchange can be accelerated (by up to 5-fold) by addition of a soluble fraction obtained from bovine retinas. This acceleration is totally abolished by brefeldin A (IC50 = 2 microM) and by trypsin treatment of the retinal extract, as expected for an ARF-specific guanine nucleotide exchange factor. To accelerate GDP release from ARF1, this soluble exchange factor absolutely requires myristoylation of ARF1 and the presence of phospholipid vesicles. The retinal extract also stimulates guanosine 5'-3-O-(thio)-triphosphate (GTP gamma S) release from ARF1 in the presence of phospholipids, but in this case myristoylation of ARF is not required. These observations, together with our previous findings that both myristoylated and non-myristoylated forms of ARF GTP-gamma S but only the myristoylated form of ARFGDP bind to membrane phospholipids, suggest that (i) the retinal exchange factor acts only on membrane-bound ARF, (ii) the myristate is not involved in the protein-protein interaction between ARF1 and the exchange factor, and (iii) N-myristoylation facilitates both spontaneous and catalyzed GDP-to-GTP exchange on ARF1 simply by facilitating the binding of ARFGDP to membrane phospholipids.

  20. VAN3 ARF-GAP-mediated vesicle transport is involved in leaf vascular network formation.

    PubMed

    Koizumi, Koji; Naramoto, Satoshi; Sawa, Shinichiro; Yahara, Natsuko; Ueda, Takashi; Nakano, Akihiko; Sugiyama, Munetaka; Fukuda, Hiroo

    2005-04-01

    Within the leaf of an angiosperm, the vascular system is constructed in a complex network pattern called venation. The formation of this vein pattern has been widely studied as a paradigm of tissue pattern formation in plants. To elucidate the molecular mechanism controlling the vein patterning process, we previously isolated Arabidopsis mutants van1 to van7, which show a discontinuous vein pattern. Here we report the phenotypic analysis of the van3 mutant in relation to auxin signaling and polar transport, and the molecular characterization of the VAN3 gene and protein. Double mutant analyses with pin1, emb30-7/gn and mp, and physiological analyses using the auxin-inducible marker DR5::GUS and an auxin transport inhibitor indicated that VAN3 may be involved in auxin signal transduction, but not in polar auxin transport. Positional cloning identified VAN3 as a gene that encodes an adenosine diphosphate (ADP)-ribosylation factor-guanosine triphosphatase (GTPase) activating protein (ARF-GAP). It resembles animal ACAPs and contains four domains: a BAR (BIN/amphiphysin/RVS) domain, a pleckstrin homology (PH) domain, an ARF-GAP domain and an ankyrin (ANK)-repeat domain. Recombinant VAN3 protein showed GTPase-activating activity and a specific affinity for phosphatidylinositols. This protein can self-associate through the N-terminal BAR domain in the yeast two-hybrid system. Subcellular localization analysis by double staining for Venus-tagged VAN3 and several green-fluorescent-protein-tagged intracellular markers indicated that VAN3 is located in a subpopulation of the trans-Golgi network (TGN). Our results indicate that the expression of this gene is induced by auxin and positively regulated by VAN3 itself, and that a specific ACAP type of ARF-GAP functions in vein pattern formation by regulating auxin signaling via a TGN-mediated vesicle transport system.

  1. Radiative processes in air excited by an ArF laser

    NASA Technical Reports Server (NTRS)

    Laufer, Gabriel; Mckenzie, Robert L.; Huo, Winifred M.

    1988-01-01

    The emission spectrum of air that is excited by an ArF laser has been investigated experimentally and theoretically to determine the conditions under which fluorescence from O2 can be used for the measurement of temperature in aerodynamic flows. In addition to the expected fluorescence from O2, the spectrum from excitation with an intense laser beam is shown to contain significant contributions from the near-resonant Raman fundamental and overtone bands, the four-photon fluorescence excitation of C produced from ambient CO2, and possibly the three-photon excitation of O(2+). The nature of the radiative interactions contributing to these additional features is described.

  2. Collateral damage-free debridement using 193nm ArF laser

    NASA Astrophysics Data System (ADS)

    Wynne, James J.; Felsenstein, Jerome M.; Trzcinski, Robert; Zupanski-Nielsen, Donna; Connors, Daniel P.

    2011-03-01

    Burn eschar and other necrotic areas of the skin and soft tissue are anhydrous compared to the underlying viable tissue. A 193 nm ArF excimer laser, emitting electromagnetic radiation at 6.4 eV at fluence exceeding the ablation threshold, will debride such necrotic areas. Because such radiation is strongly absorbed by aqueous chloride ions through the nonthermal process of electron photodetachment, debridement will cease when hydrated (with chloride ions) viable tissue is exposed, avoiding collateral damage to this tissue. Such tissue will be sterile and ready for further treatment, such as a wound dressing and/or a skin graft.

  3. Immersion diuresis without expected suppression of vasopressin

    NASA Technical Reports Server (NTRS)

    Keil, L. C.; Silver, J. E.; Wong, N.; Spaul, W. A.; Greenleaf, J. E.; Kravik, S. E.

    1984-01-01

    There is a shift of blood from the lower parts of the body to the thoracic circulation during bed rest, water immersion, and presumably during weightlessness. On earth, this central fluid shift is associated with a profound diuresis. However, the mechanism involved is not yet well understood. The present investigation is concerned with measurements regarding the plasma vasopressin, fluid, electrolyte, and plasma renin activity (PRA) responses in subjects with normal preimmersion plasma vasopressin (PVP) concentration. In the conducted experiments, PRA was suppressed significantly at 30 min of immersion and had declined by 74 percent by the end of the experiment. On the basis of previously obtained results, it appears that sodium excretion during immersion may be independent of aldosterone action. Experimental results indicate that PVP is not suppressed by water immersion in normally hydrated subjects and that other factors may be responsible for the diuresis.

  4. Analysis of Arf1 GTPase-dependent membrane binding and remodeling using the exomer secretory vesicle cargo adaptor

    PubMed Central

    Paczkowski, Jon E.; Fromme, J. Christopher

    2016-01-01

    Summary Protein-protein and protein-membrane interactions play a critical role in shaping biological membranes through direct physical contact with the membrane surface. This is particularly evident in many steps of membrane trafficking, in which proteins deform the membrane and induce fission to form transport carriers. The small GTPase Arf1 and related proteins have the ability to remodel membranes by insertion of an amphipathic helix into the membrane. Arf1 and the exomer cargo adaptor coordinate cargo sorting into subset of secretory vesicle carriers in the model organism Saccharomyces cerevisiae. Here, we detail the assays we used to explore the cooperative action of Arf1 and exomer to bind and remodel membranes. We expect these methods are broadly applicable to other small GTPase/effector systems where investigation of membrane binding and remodeling is of interest. PMID:27632000

  5. Under-expression of the Auxin Response Factor Sl-ARF4 improves postharvest behavior of tomato fruits.

    PubMed

    Sagar, Maha; Chervin, Christian; Roustant, Jean-Paul; Bouzayen, Mondher; Zouine, Mohamed

    2013-10-01

    Auxin is one of the most prominent phytohormones regulating many aspects of fleshy fruit development including fruit set, fruit size through the control of cell division and cell expansion, and fruit ripening. To shed light on the role of auxin fruit ripening, we have previously shown that Sl-ARF4 is a major player in mediating the auxin control of sugar metabolism in tomato fruit (cv MicroTom). Further extending this study, we show here that down-regulation of Sl-ARF4 in tomato alters some ripening-related fruit quality traits including enhanced fruit density at mature stage, increased firmness, prolonged shelf-life and reduced water (weight) loss at red ripe stage. These findings suggest that Sl-ARF4 plays a role in determining fruit cell wall architecture and thus providing a potential genetic marker for improving post-harvest handling and shelf life of tomato fruits.

  6. Intelligent control system based on ARM for lithography tool

    NASA Astrophysics Data System (ADS)

    Chen, Changlong; Tang, Xiaoping; Hu, Song; Wang, Nan

    2014-08-01

    The control system of traditional lithography tool is based on PC and MCU. The PC handles the complex algorithm, human-computer interaction, and communicates with MCU via serial port; The MCU controls motors and electromagnetic valves, etc. This mode has shortcomings like big volume, high power consumption, and wasting of PC resource. In this paper, an embedded intelligent control system of lithography tool, based on ARM, is provided. The control system used S5PV210 as processor, completing the functions of PC in traditional lithography tool, and provided a good human-computer interaction by using LCD and capacitive touch screen. Using Android4.0.3 as operating system, the equipment provided a cool and easy UI which made the control more user-friendly, and implemented remote control and debug, pushing video information of product by network programming. As a result, it's convenient for equipment vendor to provide technical support for users. Finally, compared with traditional lithography tool, this design reduced the PC part, making the hardware resources efficiently used and reducing the cost and volume. Introducing embedded OS and the concepts in "The Internet of things" into the design of lithography tool can be a development trend.

  7. Neutral atom lithography with metastable helium

    NASA Astrophysics Data System (ADS)

    Allred, Claire Shean

    In this dissertation we describe our performance of resist assisted neutral atom lithography using a bright beam of metastable 23S1 Helium (He*). Metastable Helium atoms have 20 eV of internal energy making them easy to detect and able to destroy a resist. The He* is produced by a reverse flow DC discharge source and then collimated with the bichromatic force, followed by three optical molasses velocity compression stages. The atoms in the resulting beam have a mean longitudinal velocity of 1125 m/s and a divergence of 1.1 mrad. The typical beam flux is 2 x 109 atoms/mm2s through a 0.1mm diameter aperture 70 cm away from the source. The internal energy of the atoms damages the molecules of a self assembled monolayer (SAM) of nonanethiol. The undisturbed SAM protects a 200 A layer of gold that has been evaporated onto a prepared Silicon wafer from a wet chemical etch. Two methods are used to pattern the He* atoms before they destroy the SAM. First, a Nickel micro mesh was used to protect the SAM. These experiments established an appropriate dosage and etch time for patterning. The samples were analyzed with an atomic force microscope and found to have an edge resolution of 63 nm. Then, patterning was accomplished using the dipole force the atoms experience while traversing a standing wave of lambda = 1083nm light tuned 500MHz below the 23S 1 → 23P2 transition. Depending on the intensity of the light, the He* atoms are focused or channeled into lines separated by lambda/2. The lines cover the entire exposed length of the substrate, about 3 mm. They are about 3 mm long, corresponding to about twice the beam waist of the laser standing wave. Thus there are 6 x 10 3 lines of length 5500lambda. These results agree with our numerical simulations of the experiment.

  8. 3D resolution gray-tone lithography

    NASA Astrophysics Data System (ADS)

    Dumbravescu, Niculae

    2000-04-01

    With the conventional micro machining technologies: isotropic and anisotropic, dry and wet etching, a few shapes can be done. To overcome this limitation, both binary multi- tasking technique or direct EB writing were used, but an inexpensive one-step UV-lithographic method, using a so- called 'gray-tone reticle', seems to be the best choice to produce local intensity modulation during exposure process. Although, by using this method and common technologies in standard IC fabrication it is easy to obtain an arbitrarily 3D shaping of positive thick resists, there are some limitations, too. The maximum number of gray-levels, on projection reticle, achieved by e-beam writing, are only 200. Also, for very thick resists, the limited focus depth of the projection objective gives a poor lateral resolution. These are the reasons why the author prose da new approach to enhance the 3D resolution of gray-tone lithography applied for thick resist. By a high resolution, both for vertical direction, as well as for horizontal direction. Particular emphasis was put on the design, manufacturing and use of halftone transmission masks, required for UV- lithographic step in the fabrication process of mechanical, optical or electronics components. The original design and fabrication method for the gray-tone test reticle were supported by experiments showing the main advantage of this new technology: the 3D structuring of thick resist in a single exposure step and also a very promising aspect ratio obtained of over 9:1. Preliminary experimental results are presented for positive thick resists in SEM micrographs. A future optimization of the lithographic process opens interesting perspectives for application of this high 3D resolution structuring method in the fabrication process of different products, with imposed complex smooth profiles, such as: x-ray LiGA-masks, refractive optics and surface- relief DOEs.

  9. Antireflective surface patterned by rolling mask lithography

    NASA Astrophysics Data System (ADS)

    Seitz, Oliver; Geddes, Joseph B.; Aryal, Mukti; Perez, Joseph; Wassei, Jonathan; McMackin, Ian; Kobrin, Boris

    2014-03-01

    A growing number of commercial products such as displays, solar panels, light emitting diodes (LEDs and OLEDs), automotive and architectural glass are driving demand for glass with high performance surfaces that offer anti-reflective, self-cleaning, and other advanced functions. State-of-the-art coatings do not meet the desired performance characteristics or cannot be applied over large areas in a cost-effective manner. "Rolling Mask Lithography" (RML™) enables highresolution lithographic nano-patterning over large-areas at low-cost and high-throughput. RML is a photolithographic process performed using ultraviolet (UV) illumination transmitted through a soft cylindrical mask as it rolls across a substrate. Subsequent transfer of photoresist patterns into the substrate is achieved using an etching process, which creates a nanostructured surface. The current generation exposure tool is capable of patterning one-meter long substrates with a width of 300 mm. High-throughput and low-cost are achieved using continuous exposure of the resist by the cylindrical photomask. Here, we report on significant improvements in the application of RML™ to fabricate anti-reflective surfaces. Briefly, an optical surface can be made antireflective by "texturing" it with a nano-scale pattern to reduce the discontinuity in the index of refraction between the air and the bulk optical material. An array of cones, similar to the structure of a moth's eye, performs this way. Substrates are patterned using RML™ and etched to produce an array of cones with an aspect ratio of 3:1, which decreases the reflectivity below 0.1%.

  10. Conformal Visualization for Partially-Immersive Platforms

    PubMed Central

    Petkov, Kaloian; Papadopoulos, Charilaos; Zhang, Min; Kaufman, Arie E.; Gu, Xianfeng

    2010-01-01

    Current immersive VR systems such as the CAVE provide an effective platform for the immersive exploration of large 3D data. A major limitation is that in most cases at least one display surface is missing due to space, access or cost constraints. This partially-immersive visualization results in a substantial loss of visual information that may be acceptable for some applications, however it becomes a major obstacle for critical tasks, such as the analysis of medical data. We propose a conformal deformation rendering pipeline for the visualization of datasets on partially-immersive platforms. The angle-preserving conformal mapping approach is used to map the 360°3D view volume to arbitrary display configurations. It has the desirable property of preserving shapes under distortion, which is important for identifying features, especially in medical data. The conformal mapping is used for rasterization, realtime raytracing and volume rendering of the datasets. Since the technique is applied during the rendering, we can construct stereoscopic images from the data, which is usually not true for image-based distortion approaches. We demonstrate the stereo conformal mapping rendering pipeline in the partially-immersive 5-wall Immersive Cabin (IC) for virtual colonoscopy and architectural review. PMID:26279083

  11. Suppressing P16(Ink4a) and P14(ARF) pathways overcomes apoptosis in individualized human embryonic stem cells.

    PubMed

    Wang, Wenqian; Zhu, Yanling; Huang, Ke; Shan, Yongli; Du, Juan; Dong, Xiaoya; Ma, Ping; Wu, Penafei; Zhang, Jian; Huang, Wenhao; Zhang, Tian; Liao, Baojian; Yao, Deyang; Pan, Guangjin; Liu, Jiajun

    2017-03-01

    Dissociation-induced apoptosis is a striking phenomenon in human embryonic stem cells (hESCs), but not in naive mouse ESCs. Rho-associated kinase-dependent actin-myosin hyperactivation is an underlying mechanism that triggers apoptosis in dissociated hESCs; however, in this study, we show that the Ink4A-ARF-mediated senescence pathway is another mechanism to cause apoptosis in individualized hESCs. We show that P16(INK4A) and P14(ARF) are immediately induced in hESCs upon dissociation, but not in mouse ESCs. Overexpression of BMI1, a suppressor for Ink4A-ARF, greatly promotes survival and cloning efficiency of individualized hESCs mechanistically via direct binding the H3K27me3-marked Ink4A-ARF locus. Forced expression of BMI1 in hESCs does not reduce the actin-myosin activation that is triggered by dissociation, which indicates it is an independent pathway for hESC survival. Furthermore, dual inhibition of both Ink4A-ARF and actin-myosin hyperactivation enables successful passaging of hESCs via gelatin, a nonbioactive matrix. In sum, we provide an additional mechanism that underlies cell death in individualized hESCs that might help to fully understand the differential cell characteristics between naive and primed ESCs.-Wang, W., Zhu, Y., Huang, K., Shan, Y., Du, J., Dong, X., Ma, P., Wu, P., Zhang, J., Huang, W., Zhang, T., Liao, B., Yao, D., Pan, G., Liu, J. Suppressing P16(Ink4a) and P14(ARF) pathways overcomes apoptosis in individualized human embryonic stem cells.

  12. The phosphatase of regenerating liver 3 (PRL-3) promotes cell migration through Arf-activity-dependent stimulation of integrin α5 recycling.

    PubMed

    Krndija, Denis; Münzberg, Christin; Maass, Ulrike; Hafner, Margit; Adler, Guido; Kestler, Hans A; Seufferlein, Thomas; Oswald, Franz; von Wichert, Götz

    2012-08-15

    The formation of metastasis is one of the most critical problems in oncology. The phosphatase of regenerating liver 3 (PRL-3) is a new target in colorectal cancer, mediating metastatic behavior through a promigratory function. However, detailed explanations for this effect have remained elusive. Here we show that PRL-3 interacts with the ADP-ribosylation factor 1 (Arf1). PRL-3 colocalizes with Arf1 in an endosomal compartment and associates with transmembrane proteins such as the transferrin receptor and α5 integrins. PRL-3 interacts with Arf1 through a distinct motif and regulates activation of Arf1. PRL-3-mediated migration depends on expression and activation of Arf1 and is sensitive to treatment with Brefeldin A. We also demonstrate that PRL-3 modulates recycling of α5 integrins and that its phosphatase activity as well as Arf activation and compartmentalization with Arf1 are required for this effect. In summary our data identify a new function for PRL-3 and show that Arf1 is a new PRL-3-dependent mediator of enhanced migration of cancer cells through enhanced recycling of matrix receptors.

  13. Development of new Si-contained hardmask for tri-layer process

    NASA Astrophysics Data System (ADS)

    Nakajima, Makoto; Kanno, Yuta; Shibayama, Wataru; Takeda, Satoshi; Kato, Masakazu; Matsumoto, Takashi

    2011-04-01

    In the advanced semiconductor lithography process, the tri-layer process have been used for the essential technique{photoresist/ silicon contained hard mask (Si-HM) / spin on carbon hard mask (SOC)}(Figure 1). Tri-layer process was introduced and applied to the L/S and C/H patterning in the ArF dry and ArF immersion lithography process. Therefore, Si-HM should have the wider compatibility with different photoresist. In this paper, we investigate the interface behavior between photoresist and Si-HM in detail and get the new Si-HM to have the wider compatibility with different photoresist.

  14. Electron beam mask writer EBM-9500 for logic 7nm node generation

    NASA Astrophysics Data System (ADS)

    Matsui, Hideki; Kamikubo, Takashi; Nakahashi, Satoshi; Nomura, Haruyuki; Nakayamada, Noriaki; Suganuma, Mizuna; Kato, Yasuo; Yashima, Jun; Katsap, Victor; Saito, Kenichi; Kobayashi, Ryoei; Miyamoto, Nobuo; Ogasawara, Munehiro

    2016-10-01

    Semiconductor scaling is slowing down because of difficulties of device manufacturing below logic 7nm node generation. Various lithography candidates which include ArF immersion with resolution enhancement technology (like Inversed Lithography technology), Extreme Ultra Violet lithography and Nano Imprint lithography are being developed to address the situation. In such advanced lithography, shot counts of mask patterns are estimated to increase explosively in critical layers, and then it is hoped that multi beam mask writer (MBMW) is released to handle them within realistic write time. However, ArF immersion technology with multiple patterning will continue to be a mainstream lithography solution for most of the layers. Then, the shot counts in less critical layers are estimated to be stable because of the limitation of resolution in ArF immersion technology. Therefore, single beam mask writer (SBMW) can play an important role for mask production still, relative to MBMW. Also the demand of SBMW seems actually strong for the logic 7nm node. To realize this, we have developed a new SBMW, EBM-9500 for mask fabrication in this generation. A newly introduced electron beam source enables higher current density of 1200A/cm2. Heating effect correction function has also been newly introduced to satisfy the requirements for both pattern accuracy and throughput. In this paper, we will report the configuration and performance of EBM-9500.

  15. Recent developments of x-ray lithography in Canada

    NASA Astrophysics Data System (ADS)

    Chaker, Mohamed; Boily, Stephane; Ginovker, A.; Jean, Alain; Kieffer, Jean-Claude; Mercier, P. P.; Pepin, Henri; Leung, Pak; Currie, John F.; Lafontaine, Hugues

    1991-08-01

    An overview of current activities in Canada is reported, including x-ray lithography studies based on laser plasma sources and x-ray mask development. In particular, the application of laser plasma sources for x-ray lithography is discussed, taking into account the industrial requirement and the present state of laser technology. The authors describe the development of silicon carbide membranes for x-ray lithography application. SiC films were prepared using either a 100 kHz plasma-enhanced chemical vapor deposition (PECVD) system or a laser ablation technique. These membranes have a relatively large diameter (> 1 in.) and a high optical transparency (> 50%). Experimental studies on stresses in tungsten films deposited with triode sputtering are reported.

  16. Thickness optimization for lithography process on silicon substrate

    NASA Astrophysics Data System (ADS)

    Su, Xiaojing; Su, Yajuan; Liu, Yansong; Chen, Fong; Liu, Zhimin; Zhang, Wei; Li, Bifeng; Gao, Tao; Wei, Yayi

    2015-03-01

    With the development of the lithography, the demand for critical dimension (CD) and CD uniformity (CDU) has reached a new level, which is harder and harder to achieve. There exists reflection at the interface between photo-resist and substrate during lithography exposure. This reflection has negative impact on CD and CDU control. It is possible to optimize the litho stack and film stack thickness on different lithography conditions. With the optimized stack, the total reflectivity for all incident angles at the interface can be controlled less than 0.5%, ideally 0.1%, which enhances process window (PW) most of the time. The theoretical results are verified by the experiment results from foundry, which helps the foundry achieve the mass production finally.

  17. Deconstructing contact hole CD printing variability in EUV lithography

    NASA Astrophysics Data System (ADS)

    Civay, D.; Wallow, T.; Doganaksoy, N.; Verduijn, E.; Schmid, G.; Mangat, P.

    2014-04-01

    Lithographic CD printing variability can be easily captured with a CDU measurement, however delineating the most significant sources causing the variability is challenging. In EUV lithography, the resist, reticle, metrology methodology, and stochastics are examples of factors that influence printing variability. Determining the most significant sources of variability in contact hole and via patterning is particularly interesting because the variability can be measured as a function of two tethered dimensions. Contact hole (CH) variability has a direct impact on device performance while via variability affects metal area scaling and design. By studying sources of variability opportunities for improving device performance and scaling can be identified. In this paper, we will examine sources of contact patterning variability in EUV lithography comprehensively using various EUV exposure tools as well as simulation methods. We will present a benchmark of current state of the art materials and patterning methods with the goal of assessing contact hole printability at the limit of 0.33 NA EUV lithography.

  18. Sequence-Specific Molecular Lithography on Single DNA Molecules

    NASA Astrophysics Data System (ADS)

    Keren, Kinneret; Krueger, Michael; Gilad, Rachel; Ben-Yoseph, Gdalyahu; Sivan, Uri; Braun, Erez

    2002-07-01

    Recent advances in the realization of individual molecular-scale electronic devices emphasize the need for novel tools and concepts capable of assembling such devices into large-scale functional circuits. We demonstrated sequence-specific molecular lithography on substrate DNA molecules by harnessing homologous recombination by RecA protein. In a sequence-specific manner, we patterned the coating of DNA with metal, localized labeled molecular objects and grew metal islands on specific sites along the DNA substrate, and generated molecularly accurate stable DNA junctions for patterning the DNA substrate connectivity. In our molecular lithography, the information encoded in the DNA molecules replaces the masks used in conventional microelectronics, and the RecA protein serves as the resist. The molecular lithography works with high resolution over a broad range of length scales from nanometers to many micrometers.

  19. Graphene nanoribbon superlattices fabricated via He ion lithography

    SciTech Connect

    Archanjo, Braulio S.; Fragneaud, Benjamin; Gustavo Cançado, Luiz; Winston, Donald; Miao, Feng; Alberto Achete, Carlos; Medeiros-Ribeiro, Gilberto

    2014-05-12

    Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

  20. Reducing DfM to practice: the lithography manufacturability assessor

    NASA Astrophysics Data System (ADS)

    Liebmann, Lars; Mansfield, Scott; Han, Geng; Culp, James; Hibbeler, Jason; Tsai, Roger

    2006-03-01

    The need for accurate quantification of all aspects of design for manufacturability using a mutually compatible set of quality-metrics and units-of-measure, is reiterated and experimentally verified. A methodology to quantify the lithography component of manufacturability is proposed and its feasibility demonstrated. Three stages of lithography manufacturability assessment are described: process window analysis on realistic integrated circuits following layout manipulations for resolution enhancement and the application of optical proximity correction, failure sensitivity analysis on simulated achievable dimensional bounds (a.k.a. variability bands), and yield risk analysis on iso-probability bands. The importance and feasibility of this technique is demonstrated by quantifying the lithography manufacturability impact of redundant contact insertion and Critical Area optimization in units that can be used to drive an overall layout optimization. The need for extensive experimental calibration and improved simulation accuracy is also highlighted.

  1. Pattern-integrated interference lithography: prospects for nano- and microelectronics.

    PubMed

    Leibovici, Matthieu C R; Burrow, Guy M; Gaylord, Thomas K

    2012-10-08

    In recent years, limitations in optical lithography have challenged the cost-effective manufacture of nano- and microelectronic chips. Spatially regular designs have been introduced to improve manufacturability. However, regular designed layouts typically require an interference step followed by a trim step. These multiple steps increase cost and reduce yield. In the present work, Pattern-Integrated Interference Lithography (PIIL) is introduced to address this problem. PIIL is the integration of interference lithography and superposed pattern mask imaging, combining the interference and the trim into a single-exposure step. Example PIIL implementations and experimental demonstrations are presented. The degrees of freedom associated with the source, pattern mask, and Fourier filter designs are described.

  2. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  3. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  4. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  5. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  6. 46 CFR 111.85-1 - Electric oil immersion heaters.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Electric oil immersion heaters. 111.85-1 Section 111.85... SYSTEMS-GENERAL REQUIREMENTS Electric Oil Immersion Heaters § 111.85-1 Electric oil immersion heaters. Each oil immersion heater must have the following: (a) An operating thermostat. (b) Heating...

  7. Ablation and cone formation mechanism on CR-39 by ArF laser irradiation

    SciTech Connect

    Shakeri Jooybari, B. E-mail: hafarideh@aut.ac.ir; Afarideh, H. E-mail: hafarideh@aut.ac.ir; Lamehi-Rachti, M.; Ghergherehchi, M.

    2015-03-07

    In this work, chemical properties, surface modification, and micro structures formation on ablated polyallyl di-glycol carbonate (CR-39) polymer by ArF laser irradiation (λ = 193 nm) at various fluences and pulse number were investigated. CR-39 samples have been irradiated with an ArF laser (193 nm) at a repetition rate of 1 Hz. Threshold fluence of ablation and effective absorption coefficient of CR-39 were determined. Conical microstructures (Taylor cone) formed on laser-ablated CR-39 exhibit: smooth, Taylor cone shape walls and sharp tips together with interference and well defined fringe-structure with a period of 230 nm, around cone base. Mechanism of cone formation and cone evolution of CR-39 ablated surface were investigated by change of fluences (at a given pulse number) and pulse number (at a given fluence). Cone height, cone base, and region of interface were increased in micrometer steps by increasing the total fluence. Depression on the base of the cone and the circular fringe were simulated. FTIR spectra were measured and energy dispersive x-ray analysis of irradiated and un-irradiated samples was performed.

  8. A Presenilin-2–ARF4 trafficking axis modulates Notch signaling during epidermal differentiation

    PubMed Central

    Ezratty, Ellen J.; Pasolli, H. Amalia

    2016-01-01

    How primary cilia impact epidermal growth and differentiation during embryogenesis is poorly understood. Here, we show that during skin development, Notch signaling occurs within the ciliated, differentiating cells of the first few suprabasal epidermal layers. Moreover, both Notch signaling and cilia disappear in the upper layers, where key ciliary proteins distribute to cell–cell borders. Extending this correlation, we find that Presenilin-2 localizes to basal bodies/cilia through a conserved VxPx motif. When this motif is mutated, a GFP-tagged Presenilin-2 still localizes to intercellular borders, but basal body localization is lost. Notably, in contrast to wild type, this mutant fails to rescue epidermal differentiation defects seen upon Psen1 and 2 knockdown. Screening components implicated in ciliary targeting and polarized exocytosis, we provide evidence that the small GTPase ARF4 is required for Presenilin basal body localization, Notch signaling, and subsequent epidermal differentiation. Collectively, our findings raise the possibility that ARF4-dependent polarized exocytosis acts through the basal body–ciliary complex to spatially regulate Notch signaling during epidermal differentiation. PMID:27354375

  9. Arf-like Protein 3 (ARL3) Regulates Protein Trafficking and Ciliogenesis in Mouse Photoreceptors.

    PubMed

    Hanke-Gogokhia, Christin; Wu, Zhijian; Gerstner, Cecilia D; Frederick, Jeanne M; Zhang, Houbin; Baehr, Wolfgang

    2016-03-25

    Arf-like protein 3 (ARL3) is a ubiquitous small GTPase expressed in ciliated cells of plants and animals. Germline deletion ofArl3in mice causes multiorgan ciliopathy reminiscent of Bardet-Biedl or Joubert syndromes. As photoreceptors are elegantly compartmentalized and have cilia, we probed the function of ARL3 (ADP-ribosylation factor (Arf)-like 3 protein) by generating rod photoreceptor-specific (prefix(rod)) and retina-specific (prefix(ret))Arl3deletions. In predegenerate(rod)Arl3(-/-)mice, lipidated phototransduction proteins showed trafficking deficiencies, consistent with the role of ARL3 as a cargo displacement factor for lipid-binding proteins. By contrast,(ret)Arl3(-/-)rods and cones expressing Cre recombinase during embryonic development formed neither connecting cilia nor outer segments and degenerated rapidly. Absence of cilia infers participation of ARL3 in ciliogenesis and axoneme formation. Ciliogenesis was rescued, and degeneration was reversed in part by subretinal injection of adeno-associated virus particles expressing ARL3-EGFP. The conditional knock-out phenotypes permitted identification of two ARL3 functions, both in the GTP-bound form as follows: one as a regulator of intraflagellar transport participating in photoreceptor ciliogenesis and the other as a cargo displacement factor transporting lipidated protein to the outer segment. Surprisingly, a farnesylated inositol polyphosphate phosphatase only trafficked from the endoplasmic reticulum to the Golgi, thereby excluding it from a role in photoreceptor cilia physiology.

  10. ILT for double exposure lithography with conventional and novel materials

    NASA Astrophysics Data System (ADS)

    Poonawala, Amyn; Borodovsky, Yan; Milanfar, Peyman

    2007-03-01

    Multiple paths exists to provide lithography solutions pursuant to Moore's Law for next 3-5 generations of technology, yet each of those paths inevitably leads to solutions eventually requiring patterning at k I < 0.30 and below. In this article, we explore double exposure single development lithography for k I >= 0.25 (using conventional resist) and k1 < 0.25 (using new out-of-sight out-of-mind materials). For the case of k I >= 0.25, we propose a novel double exposure inverse lithography technique (ILT) to split the pattern. Our algorithm is based on our earlier proposed single exposure ILT framework, and works by decomposing the aerial image (instead of the target pattern) into two parts. It also resolves the phase conflicts automatically as part of the decomposition, and the combined aerial image obtained using the estimated masks has a superior contrast. For the case of k I < 0.25, we focus on analyzing the use of various dual patterning techniques enabled by the use of hypothetic materials with properties that allow for the violation of the linear superposition of intensities from the two exposures. We investigate the possible use of two materials: contrast enhancement layer (CEL) and two-photon absorption resists. We propose a mathematical model for CEL, define its characteristic properties, and derive fundamental bounds on the improvement in image log-slope. Simulation results demonstrate that double exposure single development lithography using CEL enables printing 80nm gratings using dry lithography. We also combine ILT, CEL, and DEL to synthesize 2-D patterns with k I = 0.185. Finally, we discuss the viability of two-photon absorption resists for double exposure lithography.

  11. Deregulation of the OsmiR160 Target Gene OsARF18 Causes Growth and Developmental Defects with an Alteration of Auxin Signaling in Rice

    PubMed Central

    Huang, Jian; Li, Zhiyong; Zhao, Dazhong

    2016-01-01

    MicroRNAs (miRNAs) control gene expression as key negative regulators at the post-transcriptional level. MiR160 plays a pivotal role in Arabidopsis growth and development through repressing expression of its target AUXIN RESPONSE FACTOR (ARF) genes; however, the function of miR160 in monocots remains elusive. In this study, we found that the mature rice miR160 (OsmiR160) was mainly derived from OsMIR160a and OsMIR160b genes. Among four potential OsmiR160 target OsARF genes, the OsARF18 transcript was cleaved at the OsmiR160 target site. Rice transgenic plants (named mOsARF18) expressing an OsmiR160-resistant version of OsARF18 exhibited pleiotropic defects in growth and development, including dwarf stature, rolled leaves, and small seeds. mOsARF18 leaves were abnormal in bulliform cell differentiation and epidermal cell division. Starch accumulation in mOsARF18 seeds was also reduced. Moreover, auxin induced expression of OsMIR160a, OsMIR160b, and OsARF18, whereas expression of OsMIR160a and OsMIR160b as well as genes involved in auxin signaling was altered in mOsARF18 plants. Our results show that negative regulation of OsARF18 expression by OsmiR160 is critical for rice growth and development via affecting auxin signaling, which will advance future studies on the molecular mechanism by which miR160 fine-tunes auxin signaling in plants. PMID:27444058

  12. p14Arf acts as an antagonist of HMGA2 in senescence of mesenchymal stem cells-implications for benign tumorigenesis.

    PubMed

    Markowski, Dominique Nadine; Winter, Nina; Meyer, Frauke; von Ahsen, Inga; Wenk, Heiner; Nolte, Ingo; Bullerdiek, Jörn

    2011-07-01

    HMGA2 is a major regulator of benign tumorigenesis from mesenchyme-derived tissues and stem-cell self-renewal. It has been postulated that HMGA2 mediates its critical function by decreasing p16(Ink4a)/p14(Arf) expression and cellular senescence. To repress the oncogenic activity of HMGA2, the lin-28-let-7 axis is thought to increasingly repress the expression of HMGA2 with age. To understand the HMGA2-p14(Arf) -relationship in benign tumorigenesis, we performed a series of experiments on mesenchymal stem-cells, i.e., the proposed cells of origin of lipomas and uterine leiomyomas. The expression of both genes was inversely correlated during senescence in vitro but contrary to the expectations in adipose tissue derived stem cells (ADSCs) stimulation of HMGA2 by FGF1 increased the expression of p14(Arf) . Based on the assumption that in ADSCs p14(Arf) is repressing HMGA2, siRNA silencing of p14(Arf) was performed resulting in a significant upregulation of HMGA2. To see if p14(Arf) can repress HMGA2 by a TP53-dependent mechanism, nutlin-3, a known MDM2 antagonist, was used which not only increased the activity of the senescence, associated markers p21 and beta-galactosidase, but also decreased the expression of HMGA2, suggesting that p14(Arf) indeed influences HMGA2 by a p53-dependent mechanism because nutlin-3 stabilizes p53. Accordingly, the HMGA2 response triggered by serum was reduced by treatment of ADSCs with nutlin-3. As to the interaction between HMGA2 and p14(Arf) in benign tumorigenesis, we propose a model where akin to MSC self-renewal during tissue repair the simultaneous increase of p14(Arf) with HMGA2 ensures genomic stability, whereas in turn p14(Arf) can repress HMGA2 via TP53.

  13. The study of chromeless phase lithography (CPL) for 45nm lithography

    NASA Astrophysics Data System (ADS)

    Tan, Soon Yoeng; Lin, Qunying; Tay, Cho Jui; Quan, Chenggen

    2006-10-01

    Chromeless Phase Lithography (CPL) has been used to achieve high resolution by using phase edge interference in addition with high NA and off-axis illuminations such as annular and quasar for sub-wavelength lithography. There are two types of CPL. One is the totally chromeless pure phase type and the other is the zebra chrome pattern type for critical line dimensions. Both types of CPL masks require adding in chrome pads in some structures such as circuit line junction region to improve the resolution. Zebra type CPL mask making has reached the limitation due to small chrome peeling issue during mask cleaning and small space writing resolution issue for sub-45nm technology. In this paper, two types of CPL masks are studied. The investigation shows the differences on mask making and wafer performance. For mask making, process limitation studies such as writing, etching and cleaning will be evaluated. Data on mask CD (Critical Dimension) performance, registration, overlay, phase and transmission are collected and analyzed. For wafer performance, process window comparison, CD through pitch, MEEF (Mask Error Enhancement Factor) and linearity will be characterized for these two CPL mask types. Minimum resolution of less than 160nm pitch with reasonable good process window has been achieved with both mask types. Chromeless pure phase type has advantages on mask making while zebra type has the advantages on wafer performance. Furthermore, SRAF (Sub-Resolution Assist Feature) are added to improve wafer printing process windows. Detailed characterization work done on assist features are presented. Assist feature can improve process window by improving the contrast of isolated lines.

  14. High-fidelity replication of Dammann gratings using soft lithography.

    PubMed

    Wang, Wei; Zhou, Changhe; Jia, Wei

    2008-04-01

    We report the experimental results of using the soft lithography method for replication of Dammann gratings. By using an elastomeric stamp, uniform grating structures were transferred to the UV-curable polymer. To evaluate the quality of the replication, diffraction images and light intensity were measured. Compared with the master devices, the replicas of Dammann gratings show a slight deviation in both surface relief profile and optical performance. Experimental results demonstrated that high-fidelity replication of Dammann gratings is realized by using soft lithography with low cost and high throughput.

  15. Microphotonic parabolic light directors fabricated by two-photon lithography

    SciTech Connect

    Atwater, J. H.; Spinelli, P.; Kosten, E.; Parsons, J.; Van Lare, C.; Van de Groep, J.; Garcia de Abajo, J.; Polman, A.; Atwater, H. A.

    2011-10-10

    We have fabricated microphotonic parabolic light directors using two-photon lithography, thin-film processing, and aperture formation by focused ion beam lithography. Optical transmission measurements through upright parabolic directors 22 μm high and 10 μm in diameter exhibit strong beam directivity with a beam divergence of 5.6°, in reasonable agreement with ray-tracing and full-field electromagnetic simulations. The results indicate the suitability of microphotonic parabolic light directors for producing collimated beams for applications in advanced solar cell and light-emitting diode designs.

  16. Quantum lithography beyond the diffraction limit via Rabi-oscillations

    NASA Astrophysics Data System (ADS)

    Liao, Zeyang; Al-Amri, Mohammad; Zubairy, M. Suhail

    2011-03-01

    We propose a quantum optical method to do the sub-wavelength lithography. Our method is similar to the traditional lithography but adding a critical step before dissociating the chemical bound of the photoresist. The subwavelength pattern is achieved by inducing the multi-Rabi-oscillation between the two atomic levels. The proposed method does not require multiphoton absorption and the entanglement of photons. This method is expected to be realizable using current technology. This work is supported by a grant from the Qatar National Research Fund (QNRF) under the NPRP project and a grant from the King Abdulaziz City for Science and Technology (KACST).

  17. A Feasibility Study of 50 nm Resolution with Low Energy Electron Beam Proximity Projection Lithography

    NASA Astrophysics Data System (ADS)

    Yoshizawa, Masaki; Savas, T. A.

    2002-01-01

    Patterns of 50 nm lines and spaces were demonstrated by low energy electron beam proximity lithography using 47-nm-thick poly methyl methacrylate (PMMA) and stencil masks fabricated by achromatic interference lithography (AIL). The result indicates the validity of the resolution analysis previously reported and the resolution capabilities of low energy electron beam proximity projection lithography (LEEPL) as a 50 nm node technology.

  18. Capillary Force Lithography for Cardiac Tissue Engineering

    PubMed Central

    Macadangdang, Jesse; Lee, Hyun Jung; Carson, Daniel; Jiao, Alex; Fugate, James; Pabon, Lil; Regnier, Michael; Murry, Charles; Kim, Deok-Ho

    2014-01-01

    Cardiovascular disease remains the leading cause of death worldwide1. Cardiac tissue engineering holds much promise to deliver groundbreaking medical discoveries with the aims of developing functional tissues for cardiac regeneration as well as in vitro screening assays. However, the ability to create high-fidelity models of heart tissue has proven difficult. The heart’s extracellular matrix (ECM) is a complex structure consisting of both biochemical and biomechanical signals ranging from the micro- to the nanometer scale2. Local mechanical loading conditions and cell-ECM interactions have recently been recognized as vital components in cardiac tissue engineering3-5. A large portion of the cardiac ECM is composed of aligned collagen fibers with nano-scale diameters that significantly influences tissue architecture and electromechanical coupling2. Unfortunately, few methods have been able to mimic the organization of ECM fibers down to the nanometer scale. Recent advancements in nanofabrication techniques, however, have enabled the design and fabrication of scalable scaffolds that mimic the in vivo structural and substrate stiffness cues of the ECM in the heart6-9. Here we present the development of two reproducible, cost-effective, and scalable nanopatterning processes for the functional alignment of cardiac cells using the biocompatible polymer poly(lactide-co-glycolide) (PLGA)8 and a polyurethane (PU) based polymer. These anisotropically nanofabricated substrata (ANFS) mimic the underlying ECM of well-organized, aligned tissues and can be used to investigate the role of nanotopography on cell morphology and function10-14. Using a nanopatterned (NP) silicon master as a template, a polyurethane acrylate (PUA) mold is fabricated. This PUA mold is then used to pattern the PU or PLGA hydrogel via UV-assisted or solvent-mediated capillary force lithography (CFL), respectively15,16. Briefly, PU or PLGA pre-polymer is drop dispensed onto a glass coverslip and the PUA

  19. Nanoimprint lithography for functional polymer patterning

    NASA Astrophysics Data System (ADS)

    Cui, Dehu

    2011-07-01

    Organic semiconductors have generated huge interested in recent years for low-cost and flexible electronics. Current and future device applications for semiconducting polymers include light-emitting diodes, thin-film transistors, photovoltaic cells, photodetectors, lasers, and memories. The performance of conjugated polymer devices depends on two major factors: the chain conformation in polymer film and the device architecture. Highly ordered chain structure usually leads to much improved performance by enhancing interchain interaction to facilitate carrier transport. The goal of this research is to improve the performance of organic devices with the nanoimprint lithography. The work begins with the controlling of polymer chain orientation in patterned nanostructures through nanoimprint mold design and process parameter manipulation, and studying the effect of chain ordering on material properties. Then, step-and-repeat thermal nanoimprint technique for large-scale continuous manufacturing of conjugated polymer nanostructures is developed. After that, Systematic investigation of polymer chain configuration by Raman spectroscopy is carried out to understand how nanoimprint process parameters, such as mold pattern size, temperature, and polymer molecular weight, affects polymer chain configuration. The results indicate that chain orientation in nanoimprinted polymer micro- and nanostructures is highly related to the nanoimprint temperature and the dimensions of the mold structures. The ability to create nanoscale polymer micro- and nanostructures and manipulate their internal chain conformation establishes an original experimental platform that enables studying the properties of functional polymers at the micro- and nanoscale and understanding their fundamental structure-property relationships. In addition to the impact on basic research, the techniques developed in this work are important in applied research and development. Large-area conjugated polymer micro- and

  20. Progress in video immersion using Panospheric imaging

    NASA Astrophysics Data System (ADS)

    Bogner, Stephen L.; Southwell, David T.; Penzes, Steven G.; Brosinsky, Chris A.; Anderson, Ron; Hanna, Doug M.

    1998-09-01

    Having demonstrated significant technical and marketplace advantages over other modalities for video immersion, PanosphericTM Imaging (PI) continues to evolve rapidly. This paper reports on progress achieved since AeroSense 97. The first practical field deployment of the technology occurred in June-August 1997 during the NASA-CMU 'Atacama Desert Trek' activity, where the Nomad mobile robot was teleoperated via immersive PanosphericTM imagery from a distance of several thousand kilometers. Research using teleoperated vehicles at DRES has also verified the exceptional utility of the PI technology for achieving high levels of situational awareness, operator confidence, and mission effectiveness. Important performance enhancements have been achieved with the completion of the 4th Generation PI DSP-based array processor system. The system is now able to provide dynamic full video-rate generation of spatial and computational transformations, resulting in a programmable and fully interactive immersive video telepresence. A new multi- CCD camera architecture has been created to exploit the bandwidth of this processor, yielding a well-matched PI system with greatly improved resolution. While the initial commercial application for this technology is expected to be video tele- conferencing, it also appears to have excellent potential for application in the 'Immersive Cockpit' concept. Additional progress is reported in the areas of Long Wave Infrared PI Imaging, Stereo PI concepts, PI based Video-Servoing concepts, PI based Video Navigation concepts, and Foveation concepts (to merge localized high-resolution views with immersive views).

  1. MicroRNA167-Directed Regulation of the Auxin Response Factors GmARF8a and GmARF8b Is Required for Soybean Nodulation and Lateral Root Development.

    PubMed

    Wang, Youning; Li, Kexue; Chen, Liang; Zou, Yanmin; Liu, Haipei; Tian, Yinping; Li, Dongxiao; Wang, Rui; Zhao, Fang; Ferguson, Brett J; Gresshoff, Peter M; Li, Xia

    2015-07-01

    Legume root nodules convert atmospheric nitrogen gas into ammonium through symbiosis with a prokaryotic microsymbiont broadly called rhizobia. Auxin signaling is required for determinant nodule development; however, the molecular mechanism of auxin-mediated nodule formation remains largely unknown. Here, we show in soybean (Glycine max) that the microRNA miR167 acts as a positive regulator of lateral root organs, namely nodules and lateral roots. miR167c expression was up-regulated in the vasculature, pericycle, and cortex of soybean roots following inoculation with Bradyrhizobium japonicum strain USDA110 (the microsymbiont). It was found to positively regulate nodule numbers directly by repressing the target genes GmARF8a and GmARF8b (homologous genes of Arabidopsis [Arabidopsis thaliana] AtARF8 that encode auxin response factors). Moreover, the expression of miR167 and its targets was up- and down-regulated by auxin, respectively. The miR167-GmARF8 module also positively regulated nodulation efficiency under low microsymbiont density, a condition often associated with environmental stress. The regulatory role of miR167 on nodule initiation was dependent on the Nod factor receptor GmNFR1α, and it acts upstream of the nodulation-associated genes nodule inception, nodulation signaling pathway1, early nodulin40-1, NF-YA1 (previously known as HAEM activator protein2-1), and NF-YA2. miR167 also promoted lateral root numbers. Collectively, our findings establish a key role for the miR167-GmARF8 module in auxin-mediated nodule and lateral root formation in soybean.

  2. Dictyostelium ACAP-A is an ArfGAP involved in cytokinesis, cell migration and actin cytoskeleton dynamics.

    PubMed

    Dias, Marco; Blanc, Cédric; Thazar-Poulot, Nelcy; Ben Larbi, Sabrina; Cosson, Pierre; Letourneur, François

    2013-02-01

    ACAPs and ASAPs are Arf-GTPase-activating proteins with BAR, PH, GAP and ankyrin repeat domains and are known to regulate vesicular traffic and actin cytoskeleton dynamics in mammalian cells. The amoeba Dictyostelium has only two proteins with this domain organization, instead of the six in human, enabling a more precise functional analysis. Genetic invalidation of acapA resulted in multinucleated cells with cytokinesis defects. Mutant acapA(-) cells were hardly motile and their multicellular development was significantly delayed. In addition, formation of filopodial protrusions was deficient in these cells. Conversely, re-expression of ACAP-A-GFP resulted in numerous and long filopodia-like protrusions. Mutagenesis studies showed that the ACAP-A actin remodeling function was dependent on its ability to activate its substrate, the small GTPase ArfA. Likewise, the expression of a constitutively active ArfA•GTP mutant in wild-type cells led to a significant reduction in filopodia length. Together, our data support a role for ACAP-A in the control of the actin cytoskeleton organization and dynamics through an ArfA-dependent mechanism.

  3. Issues in defense training systems immersive displays

    NASA Astrophysics Data System (ADS)

    Gaylord, Philip

    2006-05-01

    Display technology for DOD immersive projector-based flight training systems are at a crossroads as CRT technology slowly disappears from the market place. From the DOD perspective, emerging technologies arrive poorly matched to satisfy training needs. The DOD represents a minority voice in the marketplace. Current issues include: Satisfying requirements for black level, brightness and contrast ratio, Establishing standard metrics for resolution, system performance and reliability, Obtaining maintainability and self-calibration in multi-channel arrays, Reducing screen cross-reflection in wrap-around immersive display arrays. Laser, DLP, and LCOS projector systems are compared for their current acceptance and problems in defense flight training systems. General requirements of visual display systems are discussed and contrasted for flight trainers for low flyers (helicopters) high flyers (tactical aircraft) in real-time immersive, networked systems. FLIR and NVG simulation techniques are described.

  4. Tele-Immersive medical educational environment.

    PubMed

    Ai, Zhuming; Dech, Fred; Silverstein, Jonathan; Rasmussen, Mary

    2002-01-01

    By combining teleconferencing, tele-presence, and Virtual Reality, the Tele-Immersive environment enables master surgeons to teach residents in remote locations. The design and implementation of a Tele-Immersive medical educational environment, Teledu, is presented in this paper. Teledu defines a set of Tele-Immersive user interfaces for medical education. In addition, an Application Programming Interface (API) is provided so that developers can easily develop different applications with different requirements in this environment. With the help of this API, programmers only need to design a plug-in to load their application specific data set. The plug-in is an object-oriented data set loader. Methods for rendering, handling, and interacting with the data set for each application can be programmed in the plug-in. The environment has a teacher mode and a student mode. The teacher and the students can interact with the same medical models, point, gesture, converse, and see each other.

  5. Innovative Technologies for Maskless Lithography and Non-Conventional Patterning

    DTIC Science & Technology

    2008-08-01

    the purpose of directly maskless lithography, and at developing functional materials for direct printing of semiconductors , dielectrics, and...printable nanomaterial semiconductors , dielectrics, and insulators were developed, and used to realize a range of directly printed active components for...configurations were investigated. The first, the electron bombardment source (EBS), features a thin semiconductor (single crystal diamond) membrane with a

  6. Novel ultra-high sensitive 'metal resist' for EUV lithography

    NASA Astrophysics Data System (ADS)

    Fujimori, Toru; Tsuchihashi, Toru; Minegishi, Shinya; Kamizono, Takashi; Itani, Toshiro

    2016-03-01

    This study describes the use of a novel ultra-high sensitive `metal resist' for use in extreme ultraviolet (EUV) lithography. Herein, the development of a metal resist has been studied for improving the sensitivity when using metal-containing non-chemically amplified resist materials; such materials are metal-containing organic-inorganic hybrid compounds and are referred to as EUVL Infrastructure Development Center, Inc. (EIDEC) standard metal EUV resist (ESMR). The novel metal resist's ultra-high sensitivity has previously been investigated for use with electron beam (EB) lithography. The first demonstration of ESMR performance was presented in SPIE2015, where it was shown to achieve 17-nm lines with 1.5 mJ/cm2: equivalent in EUV lithography tool. The sensitivity of ESMR using EUV open-flame exposure was also observed to have the same high sensitivity as that when using EB lithography tool. Therefore, ESMR has been confirmed to have the potential of being used as an ultra-high sensitive EUV resist material. The metal-containing organic-inorganic hybrid compounds and the resist formulations were investigated by measuring their sensitivity and line-width roughness (LWR) improvement. Furthermore, new processing conditions, such as new development and rinse procedures, are an extremely effective way of improving lithographic performance. In addition, the optimal dry-etching selective conditions between the metal resist and spin-on carbon (SOC) were obtained. The etched SOC pattern was successfully constructed from a stacked film of metal resist and SOC.

  7. Multilayer reflective coatings for extreme-ultraviolet lithography

    SciTech Connect

    Montcalm, C., LLNL

    1998-03-10

    Multilayer mirror coatings which reflect extreme ultraviolet (EUV) radiation are a key enabling technology for EUV lithography. Mo/Si multilayers with reflectances of 67.5% at 13.4 nm are now routinely achieved and reflectances of 70 2% at 11.4 nm were obtained with MO/Be multilayers. High reflectance is achieved with careful control of substrate quality, layer thicknesses, multilayer materials, interface quality, and surface termination. Reflectance and film stress were found to be stable relative to the requirements for application to EUV lithography. The run-to-run reproducibility of the reflectance peak position was characterized to be better than 0.2%, providing the required wavelength matching among the seven multilayer-coated mirrors used in the present lithography system design. Uniformity of coating was improved to better than 0.5% across 150 mm diameter substrates. These improvements in EUV multilayer mirror technology will enable us to meet the stringent specifications for coating the large optical substrates for our next-generation EUV lithography system.

  8. Shadow overlap ion-beam lithography for nanoarchitectures.

    PubMed

    Choi, Yeonho; Hong, Soongweon; Lee, Luke P

    2009-11-01

    Precisely constructed nanoscale devices and nanoarchitectures with high spatial resolution are critically needed for applications in high-speed electronics, high-density memory, efficient solar cells, optoelectronics, plasmonics, optical antennas, chemical sensors, biological sensors, and nanospectroscopic imaging. Current methods of classical optical lithography are limited by the diffraction effect of light for nanolithography, and the state of art of e-beam or focused ion beam lithography limit the throughput and further reduction less than few nanometers for large-area batch fabrication. However, these limits can be surpassed surprisingly by utilizing the overlap of two shadow images. Here we present shadow overlap of ion-beam lithography (SOIL), which can combine the advantages of parallel processing, tunable capability of geometries, cost-effective method, and high spatial resolution nanofabrication technique. The SOIL method relies on the overlap of shadows created by the directional metal deposition and etching angles on prepatterned structures. Consequently, highly tunable patterns can be obtained. As examples, unprecedented nanoarchitectures for optical antennas are demonstrated by SOIL. We expect that SOIL can have a significant impact not only on nanoscale devices, but also large-scale (i.e., micro and macro) three-dimensional innovative lithography.

  9. Diffractive element in extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Ray-Chaudhurl, Avijit K.

    2000-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  10. Diffractive element in extreme-UV lithography condenser

    DOEpatents

    Sweatt, William C.; Ray-Chaudhuri, Avijit

    2001-01-01

    Condensers having a mirror with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

  11. Condenser for extreme-UV lithography with discharge source

    DOEpatents

    Sweatt, William C.; Kubiak, Glenn D.

    2001-01-01

    Condenser system, for use with a ringfield camera in projection lithography, employs quasi grazing-incidence collector mirrors that are coated with a suitable reflective metal such as ruthenium to collect radiation from a discharge source to minimize the effect of contaminant accumulation on the collecting mirrors.

  12. Three-Dimensional Nano-Lithography for Emerging Technologies

    DTIC Science & Technology

    2005-09-27

    SUBJECT TERMS Grayscale lithography, micro - and nano -fabrication, 3D micro ...meso-optics for optical system integration, and the burgeoning field of micro -electro-mechanical systems (MEMS), provide drive in the micro - and nano ...scientific literature, and presentations at conferences devoted to micro - and nano -fabrication and micro - optics. More importantly, we developed technology

  13. Beyond EUV lithography: a comparative study of efficient photoresists' performance

    PubMed Central

    Mojarad, Nassir; Gobrecht, Jens; Ekinci, Yasin

    2015-01-01

    Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within the next decade. Should photon-based lithography still be used for patterning smaller feature sizes, beyond EUV (BEUV) lithography at 6.x nm wavelength is an option that could potentially meet the rigid demands of the semiconductor industry. We demonstrate simultaneous characterization of the resolution, line-edge roughness, and sensitivity of distinct photoresists at BEUV and compare their properties when exposed to EUV under the same conditions. By using interference lithography at these wavelengths, we show the possibility for patterning beyond 22 nm resolution and characterize the impact of using higher energy photons on the line-edge roughness and exposure latitude. We observe high sensitivity of the photoresist performance on its chemical content and compare their overall performance using the Z-parameter criterion. Interestingly, inorganic photoresists have much better performance at BEUV, while organic chemically-amplified photoresists would need serious adaptations for being used at such wavelength. Our results have immediate implications for deeper understanding of the radiation chemistry of novel photoresists at the EUV and soft X-ray spectra. PMID:25783209

  14. Patterning of membrane masks for projection e-beam lithography

    NASA Astrophysics Data System (ADS)

    Fetter, Linus A.; Biddick, Christopher J.; Blakey, Myrtle I.; Liddle, James A.; Peabody, Milton L., Jr.; Novembre, Anthony E.; Tennant, Donald M.

    1996-12-01

    A process for high-resolution patterning of the membrane- type masks used in the SCALPEL (SCattering with Angular Limitation in Projection Electron-beam Lithography) lithography system is described. SCALPEL is a 4X projection electron beam lithography tool with the potential to extend commercial lithographic capability well into the deep sub-micron range: the recently-completed SCALPEL proof- of-concept (SPOC) system has printed 0.08 micrometers lines in thick resist on Si. The details of the patterning process we currently employ and metrology results from the first series of masks are presented here. The SPOC mask blank consists of a segmented W-coated SiN (Si-rich) membrane, fabricated on a 4' Si wafer. The blank is patterned with 45 different test chips using a vector-scanned e-beam lithography tool. Metrology is performed on completed masks, and results from measurements of line-edge roughness, CD linearity, and pattern uniformity are presented. We examine the need for proximity effect correction of the pattern data, and compare the effect of correction on pattern data file size for a variety of mask technologies.

  15. Instrumentation for Microfabrication with Deep X-ray Lithography

    NASA Astrophysics Data System (ADS)

    Pantenburg, F. J.

    2007-01-01

    Deep X-ray lithography for microfabrication is performed at least at ten synchrotron radiation centers worldwide. The characteristic energies of these sources range from 1.4 keV up to 8 keV, covering mask making capabilities, deep X-ray lithography up to ultra deep x-ray lithography of several millimeters resist thickness. Limitations in deep X-ray lithography arise from hard X-rays in the SR-spectrum leading to adhesion losses of resist lines after the developing process, as well as heat load due to very high fluxes leading to thermal expansion of mask and resist during exposure and therefore to microstructure distortion. Considering the installations at ANKA as an example, the advantages of mirrors and central beam stops for DXRL are presented. Future research work will concentrate on feature sizes much below 1 μm, while the commercialization of DXRL goes in the direction of massive automation, including parallel exposures of several samples in a very wide SR-fan, developing and inspection.

  16. Nanoscale molecular-switch devices fabricated by imprint lithography

    NASA Astrophysics Data System (ADS)

    Chen, Yong; Ohlberg, Douglas A. A.; Li, Xuema; Stewart, Duncan R.; Stanley Williams, R.; Jeppesen, Jan O.; Nielsen, Kent A.; Stoddart, J. Fraser; Olynick, Deirdre L.; Anderson, Erik

    2003-03-01

    Nanoscale molecular-electronic devices comprising a single molecular monolayer of bistable [2]rotaxanes sandwiched between two 40-nm metal electrodes were fabricated using imprint lithography. Bistable current-voltage characteristics with high on-off ratios and reversible switching properties were observed. Such devices may function as basic elements for future ultradense electronic circuitry.

  17. Biologically inspired omniphobic surfaces by reverse imprint lithography.

    PubMed

    Hensel, René; Finn, Andreas; Helbig, Ralf; Braun, Hans-Georg; Neinhuis, Christoph; Fischer, Wolf-Joachim; Werner, Carsten

    2014-04-02

    Springtail skin morphology is translated into robust omniphobic polymer membranes by reverse imprint lithography. The combination of overhanging cross-sections and their arrangement in a self-supporting comblike pattern are crucial for mechanically stable coatings that can be even applied to curved surfaces.

  18. EUV lithography: NXE platform performance overview

    NASA Astrophysics Data System (ADS)

    Peeters, Rudy; Lok, Sjoerd; Mallman, Joerg; van Noordenburg, Martijn; Harned, Noreen; Kuerz, Peter; Lowisch, Martin; van Setten, Eelco; Schiffelers, Guido; Pirati, Alberto; Stoeldraijer, Judon; Brandt, David; Farrar, Nigel; Fomenkov, Igor; Boom, Herman; Meiling, Hans; Kool, Ron

    2014-04-01

    The first NXE3300B systems have been qualified and shipped to customers. The NXE:3300B is ASML's third generation EUV system and has an NA of 0.33. It succeeds the NXE:3100 system (NA of 0.25), which has allowed customers to gain valuable EUV experience. Good overlay and imaging performance has been shown on the NXE:3300B system in line with 22nm device requirements. Full wafer CDU performance of <1.5nm for 22nm dense and iso lines at a dose of ~16mJ/cm2 has been achieved. Matched machine overlay (NXE to immersion) of around 3.5nm has been demonstrated on multiple systems. Dense lines have been exposed down to 13nm half pitch, and contact holes down to 17nm half pitch. 10nm node Metal-1 layers have been exposed with a DOF of 120nm, and using single spacer assisted double patterning flow a resolution of 9nm has been achieved. Source power is the major challenge to overcome in order to achieve cost-effectiveness in EUV and enable introduction into High Volume Manufacturing. With the development of the MOPA+prepulse operation of the source, steps in power have been made, and with automated control the sources have been prepared to be used in a preproduction fab environment. Flexible pupil formation is under development for the NXE:3300B which will extend the usage of the system in HVM, and the resolution for the full system performance can be extended to 16nm. Further improvements in defectivity performance have been made, while in parallel full-scale pellicles are being developed. In this paper we will discuss the current NXE:3300B performance, its future enhancements and the recent progress in EUV source performance.

  19. Molecular basis of phosphatidylinositol 4-phosphate and ARF1 GTPase recognition by the FAPP1 pleckstrin homology (PH) domain.

    PubMed

    He, Ju; Scott, Jordan L; Heroux, Annie; Roy, Siddhartha; Lenoir, Marc; Overduin, Michael; Stahelin, Robert V; Kutateladze, Tatiana G

    2011-05-27

    Four-phosphate-adaptor protein 1 (FAPP1) regulates secretory transport from the trans-Golgi network (TGN) to the plasma membrane. FAPP1 is recruited to the Golgi through binding of its pleckstrin homology (PH) domain to phosphatidylinositol 4-phosphate (PtdIns(4)P) and a small GTPase ADP-ribosylation factor 1 (ARF1). Despite the critical role of FAPP1 in membrane trafficking, the molecular basis of its dual function remains unclear. Here, we report a 1.9 Å resolution crystal structure of the FAPP1 PH domain and detail the molecular mechanisms of the PtdIns(4)P and ARF1 recognition. The FAPP1 PH domain folds into a seven-stranded β-barrel capped by an α-helix at one edge, whereas the opposite edge is flanked by three loops and the β4 and β7 strands that form a lipid-binding pocket within the β-barrel. The ARF1-binding site is located on the outer side of the β-barrel as determined by NMR resonance perturbation analysis, mutagenesis, and measurements of binding affinities. The two binding sites have little overlap, allowing FAPP1 PH to associate with both ligands simultaneously and independently. Binding to PtdIns(4)P is enhanced in an acidic environment and is required for membrane penetration and tubulation activity of FAPP1, whereas the GTP-bound conformation of the GTPase is necessary for the interaction with ARF1. Together, these findings provide structural and biochemical insight into the multivalent membrane anchoring by the PH domain that may augment affinity and selectivity of FAPP1 toward the TGN membranes enriched in both PtdIns(4)P and GTP-bound ARF1.

  20. Water immersion in neonatal bereavement photography.

    PubMed

    Duffey, Heather

    2014-01-01

    Water immersion in neonatal bereavement photography is a new technique intended to enhance the quality of the photographs provided to families following their loss. Water immersion appears to be most helpful following a second trimester fetal demise. This technique can be used by nurses, professional photographers and others in addition to more traditional neonatal bereavement photography. It does not require special skills or equipment and can be implemented in virtually any perinatal setting. The enhanced quality of photographs produced with this method can potentially provide a source of comfort to grieving families.

  1. Protein assay structured on paper by using lithography

    NASA Astrophysics Data System (ADS)

    Wilhelm, E.; Nargang, T. M.; Al Bitar, W.; Waterkotte, B.; Rapp, B. E.

    2015-03-01

    There are two main challenges in producing a robust, paper-based analytical device. The first one is to create a hydrophobic barrier which unlike the commonly used wax barriers does not break if the paper is bent. The second one is the creation of the (bio-)specific sensing layer. For this proteins have to be immobilized without diminishing their activity. We solve both problems using light-based fabrication methods that enable fast, efficient manufacturing of paper-based analytical devices. The first technique relies on silanization by which we create a flexible hydrophobic barrier made of dimethoxydimethylsilane. The second technique demonstrated within this paper uses photobleaching to immobilize proteins by means of maskless projection lithography. Both techniques have been tested on a classical lithography setup using printed toner masks and on a lithography system for maskless lithography. Using these setups we could demonstrate that the proposed manufacturing techniques can be carried out at low costs. The resolution of the paper-based analytical devices obtained with static masks was lower due to the lower mask resolution. Better results were obtained using advanced lithography equipment. By doing so we demonstrated, that our technique enables fabrication of effective hydrophobic boundary layers with a thickness of only 342 μm. Furthermore we showed that flourescine-5-biotin can be immobilized on the non-structured paper and be employed for the detection of streptavidinalkaline phosphatase. By carrying out this assay on a paper-based analytical device which had been structured using the silanization technique we proofed biological compatibility of the suggested patterning technique.

  2. BEX1/ARF1A1C is required for BFA-sensitive recycling of PIN auxin transporters and auxin-mediated development in Arabidopsis.

    PubMed

    Tanaka, Hirokazu; Nodzyłski, Tomasz; Kitakura, Saeko; Feraru, Mugurel I; Sasabe, Michiko; Ishikawa, Tomomi; Kleine-Vehn, Jürgen; Kakimoto, Tatsuo; Friml, Jiři

    2014-04-01

    Correct positioning of membrane proteins is an essential process in eukaryotic organisms. The plant hormone auxin is distributed through intercellular transport and triggers various cellular responses. Auxin transporters of the PIN-FORMED (PIN) family localize asymmetrically at the plasma membrane (PM) and mediate the directional transport of auxin between cells. A fungal toxin, brefeldin A (BFA), inhibits a subset of guanine nucleotide exchange factors for ADP-ribosylation factor small GTPases (ARF GEFs) including GNOM, which plays a major role in localization of PIN1 predominantly to the basal side of the PM. The Arabidopsis genome encodes 19 ARF-related putative GTPases. However, ARF components involved in PIN1 localization have been genetically poorly defined. Using a fluorescence imaging-based forward genetic approach, we identified an Arabidopsis mutant, bfa-visualized exocytic trafficking defective1 (bex1), in which PM localization of PIN1-green fluorescent protein (GFP) as well as development is hypersensitive to BFA. We found that in bex1 a member of the ARF1 gene family, ARF1A1C, was mutated. ARF1A1C localizes to the trans-Golgi network/early endosome and Golgi apparatus, acts synergistically to BEN1/MIN7 ARF GEF and is important for PIN recycling to the PM. Consistent with the developmental importance of PIN proteins, functional interference with ARF1 resulted in an impaired auxin response gradient and various developmental defects including embryonic patterning defects and growth arrest. Our results show that ARF1A1C is essential for recycling of PIN auxin transporters and for various auxin-dependent developmental processes.

  3. Nuclear interactor of ARF and Mdm2 regulates multiple pathways to activate p53

    PubMed Central

    Reed, Sara M; Hagen, Jussara; Tompkins, Van S; Thies, Katie; Quelle, Frederick W; Quelle, Dawn E

    2014-01-01

    The p53 tumor suppressor is controlled by an interactive network of factors that stimulate or inhibit its transcriptional activity. Within that network, Mdm2 functions as the major antagonist of p53 by promoting its ubiquitylation and degradation. Conversely, Tip60 activates p53 through direct association on target promoters as well as acetylation of p53 at lysine 120 (K120). This study examines the functional relationship between Mdm2 and Tip60 with a novel p53 regulator, NIAM (nuclear interactor of ARF and Mdm2). Previous work showed NIAM can suppress proliferation and activate p53 independently of ARF, indicating that other factors mediate those activities. Here, we demonstrate that NIAM is a chromatin-associated protein that binds Tip60. NIAM can promote p53 K120 acetylation, although that modification is not required for NIAM to inhibit proliferation or induce p53 transactivation of the p21 promoter. Notably, Tip60 silencing showed it contributes to but is not sufficient for NIAM-mediated p53 activation, suggesting other mechanisms are involved. Indeed, growth-inhibitory forms of NIAM also bind to Mdm2, and increased NIAM expression levels disrupt p53–Mdm2 association, inhibit p53 polyubiquitylation, and prevent Mdm2-mediated inhibition of p53 transcriptional activity. Importantly, loss of NIAM significantly impairs p53 activation. Together, these results show that NIAM activates p53 through multiple mechanisms involving Tip60 association and Mdm2 inhibition. Thus, NIAM regulates 2 critical pathways that control p53 function and are altered in human cancers, implying an important role for NIAM in tumorigenesis. PMID:24621507

  4. Reverse Genetics in Candida albicans Predicts ARF Cycling Is Essential for Drug Resistance and Virulence

    PubMed Central

    Epp, Elias; Vanier, Ghyslaine; Harcus, Doreen; Lee, Anna Y.; Jansen, Gregor; Hallett, Michael; Sheppard, Don C.; Thomas, David Y.; Munro, Carol A.; Mullick, Alaka; Whiteway, Malcolm

    2010-01-01

    Candida albicans, the major fungal pathogen of humans, causes life-threatening infections in immunocompromised individuals. Due to limited available therapy options, this can frequently lead to therapy failure and emergence of drug resistance. To improve current treatment strategies, we have combined comprehensive chemical-genomic screening in Saccharomyces cerevisiae and validation in C. albicans with the goal of identifying compounds that can couple with the fungistatic drug fluconazole to make it fungicidal. Among the genes identified in the yeast screen, we found that only AGE3, which codes for an ADP-ribosylation factor GTPase activating effector protein, abrogates fluconazole tolerance in C. albicans. The age3 mutant was more sensitive to other sterols and cell wall inhibitors, including caspofungin. The deletion of AGE3 in drug resistant clinical isolates and in constitutively active calcineurin signaling mutants restored fluconazole sensitivity. We confirmed chemically the AGE3-dependent drug sensitivity by showing a potent fungicidal synergy between fluconazole and brefeldin A (an inhibitor of the guanine nucleotide exchange factor for ADP ribosylation factors) in wild type C. albicans as well as in drug resistant clinical isolates. Addition of calcineurin inhibitors to the fluconazole/brefeldin A combination only initially improved pathogen killing. Brefeldin A synergized with different drugs in non-albicans Candida species as well as Aspergillus fumigatus. Microarray studies showed that core transcriptional responses to two different drug classes are not significantly altered in age3 mutants. The therapeutic potential of inhibiting ARF activities was demonstrated by in vivo studies that showed age3 mutants are avirulent in wild type mice, attenuated in virulence in immunocompromised mice and that fluconazole treatment was significantly more efficacious when ARF signaling was genetically compromised. This work describes a new, widely conserved, broad

  5. Immersion in mediated environments: the role of personality traits.

    PubMed

    Weibel, David; Wissmath, Bartholomäus; Mast, Fred W

    2010-06-01

    Previous research studies in the context of presence point out the importance of personality factors. Surprisingly, the relation between immersion and the Big Five personality factors has not yet been examined. Hence, we assessed these traits in an online survey (N = 220) and relate them to immersive tendency, a disposition that determines whether someone is receptive to immersive experiences during media exposure. Using structural equation modeling, we can show that openness to experience, neuroticism, and extraversion are positively related to immersive tendency. The immersive tendency subscale absorption is related to openness to experience, whereas the immersive tendency subscale emotional involvement is related to openness, extraversion, and neuroticism.

  6. p14ARF post-transcriptional regulation of nuclear cyclin D1 in MCF-7 breast cancer cells: discrimination between a good and bad prognosis?

    PubMed

    McGowan, Eileen M; Tran, Nham; Alling, Nikki; Yagoub, Daniel; Sedger, Lisa M; Martiniello-Wilks, Rosetta

    2012-01-01

    As part of a cell's inherent protection against carcinogenesis, p14ARF is upregulated in response to hyperproliferative signalling to induce cell cycle arrest. This property makes p14ARF a leading candidate for cancer therapy. This study explores the consequences of reactivating p14ARF in breast cancer and the potential of targeting p14ARF in breast cancer treatment. Our results show that activation of the p14ARF-p53-p21-Rb pathway in the estrogen sensitive MCF-7 breast cancer cells induces many hallmarks of senescence including a large flat cell morphology, multinucleation, senescence-associated-β-gal staining, and rapid G1 and G2/M phase cell cycle arrest. P14ARF also induces the expression of the proto-oncogene cyclin D1, which is most often associated with a transition from G1-S phase and is highly expressed in breast cancers with poor clinical prognosis. In this study, siRNA knockdown of cyclin D1, p21 and p53 show p21 plays a pivotal role in the maintenance of high cyclin D1 expression, cell cycle and growth arrest post-p14ARF induction. High p53 and p14ARF expression and low p21/cyclin D1 did not cause cell-cycle arrest. Knockdown of cyclin D1 stops proliferation but does not reverse senescence-associated cell growth. Furthermore, cyclin D1 accumulation in the nucleus post-p14ARF activation correlated with a rapid loss of nucleolar Ki-67 protein and inhibition of DNA synthesis. Latent effects of the p14ARF-induced cellular processes resulting from high nuclear cyclin D1 accumulation included a redistribution of Ki-67 into the nucleoli, aberrant nuclear growth (multinucleation), and cell proliferation. Lastly, downregulation of cyclin D1 through inhibition of ER abrogated latent recurrence. The mediation of these latent effects by continuous expression of p14ARF further suggests a novel mechanism whereby dysregulation of cyclin D1 could have a double-edged effect. Our results suggest that p14ARF induced-senescence is related to late-onset breast cancer in

  7. Using Immersive Virtual Environments for Certification

    NASA Technical Reports Server (NTRS)

    Lutz, R.; Cruz-Neira, C.

    1998-01-01

    Immersive virtual environments (VEs) technology has matured to the point where it can be utilized as a scientific and engineering problem solving tool. In particular, VEs are starting to be used to design and evaluate safety-critical systems that involve human operators, such as flight and driving simulators, complex machinery training, and emergency rescue strategies.

  8. ICP Source with Immersed Ferromagnetic Inductor

    NASA Astrophysics Data System (ADS)

    Godyak, Valery

    2013-09-01

    Inductively coupled plasma (ICP) sources have found a wide range of applications in various areas of plasma science and technology. Among different ICP topology, ICPs with immersed inductors have benefits (compared to ICPs with helical side or flat top inductors) of better coupling and electromagnetic (EM) field self-screening by the plasma surrounding the inductor. This allows for EM-free otter plasma boundary, thus making an ICP chamber entirely of metal or glass, with no EM radiation outside the plasma. It's been long known that ICP enhanced with ferromagnetic core immersed inductor is applicable in rf light sources and has demonstrated good performance. In this presentation we report a detailed experimental study of the electrical and plasma characteristics of compact ICPs with immersed ferromagnetic inductors in argon and xenon gas. The extremely high plasma transfer efficiency of this plasma source has been demonstrated in a wide range of gas pressure and rf power. A compact plasma cathode built with ICP having an immersed ferromagnetic inductor, and operating at 70-200 W has shown high power transfer efficiency of 97%, and electron emission efficiency of 25 mA/W. These data are superior compared to those demonstrated for other plasma cathodes.

  9. 46 CFR 199.273 - Immersion suits.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... appropriate size for each person on board. (b) If watch stations, work stations, or work sites are remote from... suits stowed at the watch stations, work stations, or work sites to equal the number of persons normally on watch in, or assigned to, those locations at any time. (c) The immersion suits required...

  10. Simulation Exploration through Immersive Parallel Planes: Preprint

    SciTech Connect

    Brunhart-Lupo, Nicholas; Bush, Brian W.; Gruchalla, Kenny; Smith, Steve

    2016-03-01

    We present a visualization-driven simulation system that tightly couples systems dynamics simulations with an immersive virtual environment to allow analysts to rapidly develop and test hypotheses in a high-dimensional parameter space. To accomplish this, we generalize the two-dimensional parallel-coordinates statistical graphic as an immersive 'parallel-planes' visualization for multivariate time series emitted by simulations running in parallel with the visualization. In contrast to traditional parallel coordinate's mapping the multivariate dimensions onto coordinate axes represented by a series of parallel lines, we map pairs of the multivariate dimensions onto a series of parallel rectangles. As in the case of parallel coordinates, each individual observation in the dataset is mapped to a polyline whose vertices coincide with its coordinate values. Regions of the rectangles can be 'brushed' to highlight and select observations of interest: a 'slider' control allows the user to filter the observations by their time coordinate. In an immersive virtual environment, users interact with the parallel planes using a joystick that can select regions on the planes, manipulate selection, and filter time. The brushing and selection actions are used to both explore existing data as well as to launch additional simulations corresponding to the visually selected portions of the input parameter space. As soon as the new simulations complete, their resulting observations are displayed in the virtual environment. This tight feedback loop between simulation and immersive analytics accelerates users' realization of insights about the simulation and its output.

  11. Digital Immersive Virtual Environments and Instructional Computing

    ERIC Educational Resources Information Center

    Blascovich, Jim; Beall, Andrew C.

    2010-01-01

    This article reviews theory and research relevant to the development of digital immersive virtual environment-based instructional computing systems. The review is organized within the context of a multidimensional model of social influence and interaction within virtual environments that models the interaction of four theoretical factors: theory…

  12. How One Class Experienced Cultural Immersion

    ERIC Educational Resources Information Center

    Allery, Virginia

    2009-01-01

    Twenty-one teacher candidates and faculty from Turtle Mountain Community College (TMCC, Belcourt, North Dakota) and Cikana Cankdeska Community College (CCCC, Fort Totten, North Dakota) traveled by train from North Dakota to Minneapolis, Minnesota, for an immersion experience as part of their Human Relations and Multicultural Education. The group…

  13. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  14. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  15. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  16. Architectures for Developing Multiuser, Immersive Learning Scenarios

    ERIC Educational Resources Information Center

    Nadolski, Rob J.; Hummel, Hans G. K.; Slootmaker, Aad; van der Vegt, Wim

    2012-01-01

    Multiuser immersive learning scenarios hold strong potential for lifelong learning as they can support the acquisition of higher order skills in an effective, efficient, and attractive way. Existing virtual worlds, game development platforms, and game engines only partly cater for the proliferation of such learning scenarios as they are often…

  17. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  18. 21 CFR 890.5100 - Immersion hydrobath.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Immersion hydrobath. 890.5100 Section 890.5100 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5100...

  19. Cross-Cultural Nonverbal Cue Immersive Training

    DTIC Science & Technology

    2008-12-01

    1 CROSS-CULTURAL NONVERBAL CUE IMMERSIVE TRAINING Shatha N. Samman*, Michael Moshell + , Bryan Clark, Chantel Brathwaite + , and Allison Abbe...their meaning. 1.2 Nonverbal Cues Categorized by Function In one commonly accepted taxonomic approach, Ekman and Friesen (1969) classified...nonverbal cues (Ekman & Friesen , 1969). Emblems occur mainly when verbal communication is inhibited by external factors (e.g., noise, distance

  20. Foreign Language Immersion Programs. ERIC Digest.

    ERIC Educational Resources Information Center

    Met, Myriam

    Immersion is defined as a method of foreign language instruction in which the regular school curriculum is taught through the medium of the language. The foreign language is the vehicle for content instruction; it is not the subject of instruction. Different questions pertaining to the following subjects are answered: (1) long-range goals of a…