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Sample records for atomic layer graphene

  1. Damage evaluation in graphene underlying atomic layer deposition dielectrics

    PubMed Central

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A.

    2015-01-01

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors. PMID:26311131

  2. Damage evaluation in graphene underlying atomic layer deposition dielectrics.

    PubMed

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A

    2015-08-27

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors.

  3. Interfacial Atomic Structure of Twisted Few-Layer Graphene.

    PubMed

    Ishikawa, Ryo; Lugg, Nathan R; Inoue, Kazutoshi; Sawada, Hidetaka; Taniguchi, Takashi; Shibata, Naoya; Ikuhara, Yuichi

    2016-02-18

    A twist in bi- or few-layer graphene breaks the local symmetry, introducing a number of intriguing physical properties such as opening new bandgaps. Therefore, determining the twisted atomic structure is critical to understanding and controlling the functional properties of graphene. Combining low-angle annular dark-field electron microscopy with image simulations, we directly determine the atomic structure of twisted few-layer graphene in terms of a moiré superstructure which is parameterized by a single twist angle and lattice constant. This method is shown to be a powerful tool for accurately determining the atomic structure of two-dimensional materials such as graphene, even in the presence of experimental errors. Using coincidence-site-lattice and displacement-shift-complete theories, we show that the in-plane translation state between layers is not a significant structure parameter, explaining why the present method is adequate not only for bilayer graphene but also a few-layered twisted graphene.

  4. Interfacial Atomic Structure of Twisted Few-Layer Graphene

    PubMed Central

    Ishikawa, Ryo; Lugg, Nathan R.; Inoue, Kazutoshi; Sawada, Hidetaka; Taniguchi, Takashi; Shibata, Naoya; Ikuhara, Yuichi

    2016-01-01

    A twist in bi- or few-layer graphene breaks the local symmetry, introducing a number of intriguing physical properties such as opening new bandgaps. Therefore, determining the twisted atomic structure is critical to understanding and controlling the functional properties of graphene. Combining low-angle annular dark-field electron microscopy with image simulations, we directly determine the atomic structure of twisted few-layer graphene in terms of a moiré superstructure which is parameterized by a single twist angle and lattice constant. This method is shown to be a powerful tool for accurately determining the atomic structure of two-dimensional materials such as graphene, even in the presence of experimental errors. Using coincidence-site-lattice and displacement-shift-complete theories, we show that the in-plane translation state between layers is not a significant structure parameter, explaining why the present method is adequate not only for bilayer graphene but also a few-layered twisted graphene. PMID:26888259

  5. Strengthening effect of single-atomic-layer graphene in metal-graphene nanolayered composites.

    PubMed

    Kim, Youbin; Lee, Jinsup; Yeom, Min Sun; Shin, Jae Won; Kim, Hyungjun; Cui, Yi; Kysar, Jeffrey W; Hone, James; Jung, Yousung; Jeon, Seokwoo; Han, Seung Min

    2013-01-01

    Graphene is a single-atomic-layer material with excellent mechanical properties and has the potential to enhance the strength of composites. Its two-dimensional geometry, high intrinsic strength and modulus can effectively constrain dislocation motion, resulting in the significant strengthening of metals. Here we demonstrate a new material design in the form of a nanolayered composite consisting of alternating layers of metal (copper or nickel) and monolayer graphene that has ultra-high strengths of 1.5 and 4.0 GPa for copper-graphene with 70-nm repeat layer spacing and nickel-graphene with 100-nm repeat layer spacing, respectively. The ultra-high strengths of these metal-graphene nanolayered structures indicate the effectiveness of graphene in blocking dislocation propagation across the metal-graphene interface. Ex situ and in situ transmission electron microscopy compression tests and molecular dynamics simulations confirm a build-up of dislocations at the graphene interface. PMID:23820590

  6. Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

    NASA Astrophysics Data System (ADS)

    Nourbakhsh, Amirhasan; Adelmann, Christoph; Song, Yi; Lee, Chang Seung; Asselberghs, Inge; Huyghebaert, Cedric; Brizzi, Simone; Tallarida, Massimo; Schmeißer, Dieter; van Elshocht, Sven; Heyns, Marc; Kong, Jing; Palacios, Tomás; de Gendt, Stefan

    2015-06-01

    Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance-voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer for the deposition of Al2O3 on chemically inert single layer graphene, resulting in high performance top-gated field-effect transistors.Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the

  7. Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides.

    PubMed

    Nourbakhsh, Amirhasan; Adelmann, Christoph; Song, Yi; Lee, Chang Seung; Asselberghs, Inge; Huyghebaert, Cedric; Brizzi, Simone; Tallarida, Massimo; Schmeisser, Dieter; Van Elshocht, Sven; Heyns, Marc; Kong, Jing; Palacios, Tomás; De Gendt, Stefan

    2015-06-28

    Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance-voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer for the deposition of Al2O3 on chemically inert single layer graphene, resulting in high performance top-gated field-effect transistors.

  8. Single-atom Catalysis Using Pt/Graphene Achieved through Atomic Layer Deposition

    PubMed Central

    Sun, Shuhui; Zhang, Gaixia; Gauquelin, Nicolas; Chen, Ning; Zhou, Jigang; Yang, Songlan; Chen, Weifeng; Meng, Xiangbo; Geng, Dongsheng; Banis, Mohammad N.; Li, Ruying; Ye, Siyu; Knights, Shanna; Botton, Gianluigi A.; Sham, Tsun-Kong; Sun, Xueliang

    2013-01-01

    Platinum-nanoparticle-based catalysts are widely used in many important chemical processes and automobile industries. Downsizing catalyst nanoparticles to single atoms is highly desirable to maximize their use efficiency, however, very challenging. Here we report a practical synthesis for isolated single Pt atoms anchored to graphene nanosheet using the atomic layer deposition (ALD) technique. ALD offers the capability of precise control of catalyst size span from single atom, subnanometer cluster to nanoparticle. The single-atom catalysts exhibit significantly improved catalytic activity (up to 10 times) over that of the state-of-the-art commercial Pt/C catalyst. X-ray absorption fine structure (XAFS) analyses reveal that the low-coordination and partially unoccupied densities of states of 5d orbital of Pt atoms are responsible for the excellent performance. This work is anticipated to form the basis for the exploration of a next generation of highly efficient single-atom catalysts for various applications.

  9. Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling.

    PubMed

    Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

    2016-01-01

    Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene.

  10. Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling

    NASA Astrophysics Data System (ADS)

    Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

    2015-12-01

    Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene.Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene. Electronic supplementary information (ESI) available: Three TEM movies, additional TEM data corresponding to movies, calculated models, and lifetime results. See DOI: 10.1039/c5nr05913e

  11. Inhomogeneous longitudinal distribution of Ni atoms on graphene induced by layer-number-dependent internal diffusion

    NASA Astrophysics Data System (ADS)

    Hasegawa, M.; Tashima, K.; Kotsugi, M.; Ohkochi, T.; Suemitsu, M.; Fukidome, H.

    2016-09-01

    The intrinsic transport properties, such as carrier mobility and saturation velocity, of graphene are the highest among materials owing to its linear band dispersion and weak backscattering. However, the reported field-effect mobility of transistors using graphene as a channel is much lower than the intrinsic channel mobility. One of the reasons for this low mobility is the high contact resistance between graphene and metals used for the source and drain electrodes, which results from the interfacial roughness. Even Ni, which is a promising contact metal for many materials because of its high adhesion and lower contact resistance, does not meet the requirement as a contact metal for graphene. Noticing that the interfacial roughness between the a metal and graphene is strongly related to the onset of the contact resistance, we performed transmission electron microscopy and photoemission electron microscopy measurements to evaluate the microscopic lateral and longitudinal distributions of Ni atoms at the Ni/graphene interface formed on epitaxial graphene (EG) on 4H-SiC(0001). Our data revealed that the deposited Ni atoms diffused into the EG layers, but they did not reach the EG/SiC interface, and the diffusion was stronger on bilayered graphene than on monolayered graphene. We thus ascribe the layer-number-dependent internal diffusion of Ni atoms in EG as a cause of the microscopic interfacial roughness between graphene and the metal. Ensuring homogeneous distribution of the number of EG layers should be key to lowering the contact resistance.

  12. Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zheng, Li; Cheng, Xinhong; Cao, Duo; Wang, Zhongjian; Xia, Chao; Yu, Yuehui; Shen, Dashen

    2014-01-01

    Al2O3 films are deposited directly onto graphene by H2O-based atomic layer deposition (ALD), and the films are pinhole-free and continuously cover the graphene surface. The growth process of Al2O3 films does not introduce any detective defects in graphene, suppresses the hysteresis effect and tunes the graphene doping to n-type. The self-cleaning of ALD growth process, together with the physically absorbed H2O and oxygen-deficient ALD environment consumes OH- bonds, suppresses the p-doping of graphene, shifts Dirac point to negative gate bias and enhances the electron mobility.

  13. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    NASA Astrophysics Data System (ADS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-05-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar+ ion beam, we cleaned the polymer residue without damaging the graphene network. HfO2 grown by atomic layer deposition on graphene cleaned using an Ar+ ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar+ ion cleaning) showed a non-uniform structure. A graphene-HfO2-metal capacitor fabricated by growing 20-nm thick HfO2 on graphene exhibited a very low leakage current (<10-11 A/cm2) for Ar+ ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  14. Optical limiting properties and mechanisms of single-layer graphene dispersions in heavy-atom solvents.

    PubMed

    Yan, Lihe; Xiong, Yaobing; Si, Jinhai; Sun, Xuehui; Yi, Wenhui; Hou, Xun

    2014-12-29

    The optical limiting (OL) properties of single-layer graphene dispersions in different solvents were studied using a nanosecond pulse laser. The graphene dispersions, especially in heavy-atom solvents, showed much better OL properties compared with referenced C60-toluene solution. The dependences of OL thresholds and nonlinear scattering (NLS) intensities on the solvent surface tensions indicated that, NLS effect played an important role in the OL process of graphene dispersions, while nonlinear absorption (NLA) effect might also contribute in solvents with heavy atoms. The NLA measurements further demonstrated the contribution of NLA effect to the excellent OL property of graphene dispersions in heavy-atom solvents. PMID:25607151

  15. Atomic-scale friction modulated by potential corrugation in multi-layered graphene materials

    NASA Astrophysics Data System (ADS)

    Zhuang, Chunqiang; Liu, Lei

    2015-03-01

    Friction is an important issue that has to be carefully treated for the fabrication of graphene-based nano-scale devices. So far, the friction mechanism of graphene materials on the atomic scale has not yet been clearly presented. Here, first-principles calculations were employed to unveil the friction behaviors and their atomic-scale mechanism. We found that potential corrugations on sliding surfaces dominate the friction force and the friction anisotropy of graphene materials. Higher friction forces correspond to larger corrugations of potential energy, which are tuned by the number of graphene layers. The friction anisotropy is determined by the regular distributions of potential energy. The sliding along a fold-line path (hollow-atop-hollow) has a relatively small potential energy barrier. Thus, the linear sliding observed in macroscopic friction experiments may probably be attributed to the fold-line sliding mode on the atomic scale. These findings can also be extended to other layer-structure materials, such as molybdenum disulfide (MoS2) and graphene-like BN sheets.

  16. Atomic-scale friction modulated by potential corrugation in multi-layered graphene materials

    SciTech Connect

    Zhuang, Chunqiang; Liu, Lei

    2015-03-21

    Friction is an important issue that has to be carefully treated for the fabrication of graphene-based nano-scale devices. So far, the friction mechanism of graphene materials on the atomic scale has not yet been clearly presented. Here, first-principles calculations were employed to unveil the friction behaviors and their atomic-scale mechanism. We found that potential corrugations on sliding surfaces dominate the friction force and the friction anisotropy of graphene materials. Higher friction forces correspond to larger corrugations of potential energy, which are tuned by the number of graphene layers. The friction anisotropy is determined by the regular distributions of potential energy. The sliding along a fold-line path (hollow-atop-hollow) has a relatively small potential energy barrier. Thus, the linear sliding observed in macroscopic friction experiments may probably be attributed to the fold-line sliding mode on the atomic scale. These findings can also be extended to other layer-structure materials, such as molybdenum disulfide (MoS{sub 2}) and graphene-like BN sheets.

  17. Surface diffusion coefficient of Au atoms on single layer graphene grown on Cu

    SciTech Connect

    Ruffino, F. Cacciato, G.; Grimaldi, M. G.

    2014-02-28

    A 5 nm thick Au film was deposited on single layer graphene sheets grown on Cu. By thermal processes, the dewetting phenomenon of the Au film on the graphene was induced so to form Au nanoparticles. The mean radius, surface-to-surface distance, and surface density evolution of the nanoparticles on the graphene sheets as a function of the annealing temperature were quantified by scanning electron microscopy analyses. These quantitative data were analyzed within the classical mean-field nucleation theory so to obtain the temperature-dependent Au atoms surface diffusion coefficient on graphene: D{sub S}(T)=[(8.2±0.6)×10{sup −8}]exp[−(0.31±0.02(eV)/(at) )/kT] cm{sup 2}/s.

  18. Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene [Plus Supplemental Information

    SciTech Connect

    Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J.; Robinson, Jeremy T.; Wallace, Robert M.; Mayer, Theresa S.; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A.

    2014-11-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. We report the direct growth of highly crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG). Raman spectroscopy and photoluminescence confirms high-quality WSe2 monolayers; while transmission electron microscopy shows an atomically sharp interface and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that a tunnel barrier exists due to the van der Waals gap, and is supported by density functional theory that predicts a 1.6 eV barrier for transport from WSe2 to graphene.

  19. High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

    SciTech Connect

    Mu, Haichuan; Zhang, Zhiqiang; Wang, Keke; Xie, Haifen; Zhao, Xiaojing; Liu, Feng

    2014-07-21

    Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5 nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36 s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductive graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.

  20. Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene [Plus Supplemental Information

    DOE PAGES

    Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; et al

    2014-11-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. We report the direct growth of highly crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG). Raman spectroscopy and photoluminescence confirms high-quality WSe2 monolayers; while transmission electron microscopy shows an atomically sharp interface and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that a tunnel barrier exists due to the van der Waals gap, and is supported by density functional theorymore » that predicts a 1.6 eV barrier for transport from WSe2 to graphene.« less

  1. High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

    NASA Astrophysics Data System (ADS)

    Mu, Haichuan; Zhang, Zhiqiang; Zhao, Xiaojing; Liu, Feng; Wang, Keke; Xie, Haifen

    2014-07-01

    Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5 nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36 s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductive graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.

  2. Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone.

    PubMed

    Jandhyala, Srikar; Mordi, Greg; Lee, Bongki; Lee, Geunsik; Floresca, Carlo; Cha, Pil-Ryung; Ahn, Jinho; Wallace, Robert M; Chabal, Yves J; Kim, Moon J; Colombo, Luigi; Cho, Kyeongjae; Kim, Jiyoung

    2012-03-27

    Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic layer deposition through ozone functionalization to deposit high-κ dielectrics (such as Al(2)O(3)) without breaking vacuum. The underlying mechanisms of functionalization have been studied theoretically using ab initio calculations and experimentally using in situ monitoring of transport properties. It is found that ozone molecules are physisorbed on the surface of graphene, which act as nucleation sites for dielectric deposition. The physisorbed ozone molecules eventually react with the metal precursor, trimethylaluminum to form Al(2)O(3). Additionally, we successfully demonstrate the performance of dual-gated GFETs with Al(2)O(3) of sub-5 nm physical thickness as a gate dielectric. Back-gated GFETs with mobilities of ~19,000 cm(2)/(V·s) are also achieved after Al(2)O(3) deposition. These results indicate that ozone functionalization is a promising pathway to achieve scaled gate dielectrics on graphene without leaving a residual nucleation layer.

  3. One-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film.

    PubMed

    Ho, Kuan-I; Liao, Jia-Hong; Huang, Chi-Hsien; Hsu, Chang-Lung; Zhang, Wenjing; Lu, Ang-Yu; Li, Lain-Jong; Lai, Chao-Sung; Su, Ching-Yuan

    2014-03-12

    In this study, the scalable and one-step fabrication of single atomic-layer transistors is demonstrated by the selective fluorination of graphene using a low-damage CF4 plasma treatment, where the generated F-radicals preferentially fluorinated the graphene at low temperature (<200 °C) while defect formation was suppressed by screening out the effect of ion damage. The chemical structure of the C-F bonds is well correlated with their optical and electrical properties in fluorinated graphene, as determined by X-ray photoelectron spectroscopy, Raman spectroscopy, and optical and electrical characterizations. The electrical conductivity of the resultant fluorinated graphene (F-graphene) was demonstrated to be in the range between 1.6 kΩ/sq and 1 MΩ/sq by adjusting the stoichiometric ratio of C/F in the range between 27.4 and 5.6, respectively. Moreover, a unique heterojunction structure of semi-metal/semiconductor/insulator can be directly formed in a single layer of graphene using a one-step fluorination process by introducing a Au thin-film as a buffer layer. With this heterojunction structure, it would be possible to fabricate transistors in a single graphene film via a one-step fluorination process, in which pristine graphene, partial F-graphene, and highly F-graphene serve as the source/drain contacts, the channel, and the channel isolation in a transistor, respectively. The demonstrated graphene transistor exhibits an on-off ratio above 10, which is 3-fold higher than that of devices made from pristine graphene. This efficient transistor fabrication method produces electrical heterojunctions of graphene over a large area and with selective patterning, providing the potential for the integration of electronics down to the single atomic-layer scale.

  4. Quantitative Assessment of Friction Characteristics of Single-Layer MoS2 and Graphene Using Atomic Force Microscopy.

    PubMed

    Khac, Bien-cuong tran; Chung, Koo-hyun

    2016-05-01

    Atomically thin layered materials such as MoS2 and graphene have attracted a lot of interest as protective coating layers for micro- and nano-electromechanical devices based on their superior mechanical properties and chemical inertness. In this work, the frictional characteristics of single layer MoS2 and graphene prepared by the mechanical exfoliation method were quantitatively investigated using atomic force microscopy. The results showed that both MoS2 and graphene exhibited relatively low friction forces of 1-3 nN under normal forces ranging from 1 to 30 nN. However, a higher increase in the friction force as the normal force increased was observed in the case of MoS2. The differences in the adhesion characteristics and mechanical properties of atomically thin layered materials may influence the puckering of the layer, which in turn influences the frictional behavior. PMID:27483768

  5. Interactions between fluorescence of atomically layered graphene oxide and metallic nanoparticles

    NASA Astrophysics Data System (ADS)

    Wang, Yu; Li, Shao-Sian; Yeh, Yun-Chieh; Yu, Chen-Chieh; Chen, Hsuen-Li; Li, Feng-Chieh; Chang, Yu-Ming; Chen, Chun-Wei

    2013-01-01

    Graphene oxide (GO) demonstrates interesting photoluminescence (PL) because of its unique heterogeneous atomic structure, which consists of variable sp2- and sp3-bonded carbons. In this study, we report the interaction between the luminescence of GO ranging from a single atomic layer to few-layered thin films and localized surface plasmon resonance (LSPR) from silver nanoparticles (Ag NPs). The photoluminescence of GO in the vicinity of the Ag NPs is enhanced significantly due to the near-field plasmonic effect by coupling electron-hole pairs of GO with oscillating electrons in Ag NPs, leading to an increased PL intensity and a decreased PL decay lifetime. The maxima 30-fold enhancement in PL intensity is obtained with an optimized film thickness of GO, and the luminescence image from a single atomic layer GO sheet is successfully observed with the assistance of the LSPR effect. The results provide an ideal platform for exploring the interactions between the fluorescence of two-dimensional layered materials and the LSPR effect.Graphene oxide (GO) demonstrates interesting photoluminescence (PL) because of its unique heterogeneous atomic structure, which consists of variable sp2- and sp3-bonded carbons. In this study, we report the interaction between the luminescence of GO ranging from a single atomic layer to few-layered thin films and localized surface plasmon resonance (LSPR) from silver nanoparticles (Ag NPs). The photoluminescence of GO in the vicinity of the Ag NPs is enhanced significantly due to the near-field plasmonic effect by coupling electron-hole pairs of GO with oscillating electrons in Ag NPs, leading to an increased PL intensity and a decreased PL decay lifetime. The maxima 30-fold enhancement in PL intensity is obtained with an optimized film thickness of GO, and the luminescence image from a single atomic layer GO sheet is successfully observed with the assistance of the LSPR effect. The results provide an ideal platform for exploring the

  6. Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition.

    PubMed

    Davami, Keivan; Jiang, Yijie; Cortes, John; Lin, Chen; Shaygan, Mehrdad; Turner, Kevin T; Bargatin, Igor

    2016-04-15

    We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al2O3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Young's modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Young's modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed. PMID:26926386

  7. Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Davami, Keivan; Jiang, Yijie; Cortes, John; Lin, Chen; Shaygan, Mehrdad; Turner, Kevin T.; Bargatin, Igor

    2016-04-01

    We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al2O3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Young’s modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Young’s modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed.

  8. Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition.

    PubMed

    Davami, Keivan; Jiang, Yijie; Cortes, John; Lin, Chen; Shaygan, Mehrdad; Turner, Kevin T; Bargatin, Igor

    2016-04-15

    We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al2O3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Young's modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Young's modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed.

  9. Density Functional Theory Study of Atomic Layer Deposition of Zinc Oxide on Graphene

    NASA Astrophysics Data System (ADS)

    Ali, Amgad Ahmed; Hashim, Abdul Manaf

    2015-07-01

    The dissociation of zinc ions (Zn2+) from vapor-phase zinc acetylacetonate, Zn(C5H7O2)2, or Zn(acac)2 and its adsorption onto graphene oxide via atomic layer deposition (ALD) were studied using a quantum mechanics approach. Density functional theory (DFT) was used to obtain an approximate solution to the Schrödinger equation. The graphene oxide cluster model was used to represent the surface of the graphene film after pre-oxidation. In this study, the geometries of reactants, transition states, and products were optimized using the B3LYB/6-31G** level of theory or higher. Furthermore, the relative energies of the various intermediates and products in the gas-phase radical mechanism were calculated at the B3LYP/6-311++G** and MP2/6-311 + G(2df,2p) levels of theory. Additionally, a molecular orbital (MO) analysis was performed for the products of the decomposition of the Zn(acac)2 complex to investigate the dissociation of Zn2+ and the subsequent adsorption of H atoms on the C5H7O2 cluster to form acetylacetonate enol. The reaction energies were calculated, and the reaction mechanism was accordingly proposed. A simulation of infrared (IR) properties was performed using the same approach to support the proposed mechanism via a complete explanation of bond forming and breaking during each reaction step.

  10. Interactions between fluorescence of atomically layered graphene oxide and metallic nanoparticles.

    PubMed

    Wang, Yu; Li, Shao-Sian; Yeh, Yun-Chieh; Yu, Chen-Chieh; Chen, Hsuen-Li; Li, Feng-Chieh; Chang, Yu-Ming; Chen, Chun-Wei

    2013-02-21

    Graphene oxide (GO) demonstrates interesting photoluminescence (PL) because of its unique heterogeneous atomic structure, which consists of variable sp(2)- and sp(3)-bonded carbons. In this study, we report the interaction between the luminescence of GO ranging from a single atomic layer to few-layered thin films and localized surface plasmon resonance (LSPR) from silver nanoparticles (Ag NPs). The photoluminescence of GO in the vicinity of the Ag NPs is enhanced significantly due to the near-field plasmonic effect by coupling electron-hole pairs of GO with oscillating electrons in Ag NPs, leading to an increased PL intensity and a decreased PL decay lifetime. The maxima 30-fold enhancement in PL intensity is obtained with an optimized film thickness of GO, and the luminescence image from a single atomic layer GO sheet is successfully observed with the assistance of the LSPR effect. The results provide an ideal platform for exploring the interactions between the fluorescence of two-dimensional layered materials and the LSPR effect. PMID:23340692

  11. Property transformation of graphene with Al{sub 2}O{sub 3} films deposited directly by atomic layer deposition

    SciTech Connect

    Zheng, Li; Cao, Duo; Wang, Zhongjian; Xia, Chao; Cheng, Xinhong Yu, Yuehui; Shen, Dashen

    2014-01-13

    Al{sub 2}O{sub 3} films are deposited directly onto graphene by H{sub 2}O-based atomic layer deposition (ALD), and the films are pinhole-free and continuously cover the graphene surface. The growth process of Al{sub 2}O{sub 3} films does not introduce any detective defects in graphene, suppresses the hysteresis effect and tunes the graphene doping to n-type. The self-cleaning of ALD growth process, together with the physically absorbed H{sub 2}O and oxygen-deficient ALD environment consumes OH{sup −} bonds, suppresses the p-doping of graphene, shifts Dirac point to negative gate bias and enhances the electron mobility.

  12. Controlling Edge Morphology in Graphene Layers Using Electron Irradiation: From Sharp Atomic Edges to Coalesced Layers Forming Loops

    SciTech Connect

    Cruz-Silva, E.; Botello-Mendez, A.R.; Barnett, Zachary M; Jia, Xiaoting; Dresselhaus, M; Terrones, H.; Terrones, M.; Sumpter, Bobby G; Meunier, Vincent

    2010-01-01

    Recent experimental reports indicate that Joule heating can atomically sharpen the edges of chemical vapor deposition grown graphitic nanoribbons. The absence or presence of loops between adjacent layers in the annealed materials is the topic of a growing debate that this Letter aims to put to rest. We offer a rationale explaining why loops do form if Joule heating is used alone, and why adjacent nanoribbon layers do not coalesce when Joule heating is applied after high-energy electrons first irradiate the sample. Our work, based on large-scale quantum molecular dynamics and electronic-transport calculations, shows that vacancies on adjacent graphene sheets, created by electron irradiation, inhibit the formation of edge loops.

  13. Seeding Atomic Layer Deposition of High-k Dielectrics on Epitaxial Graphene with Organic Self-assembled Monolayers

    SciTech Connect

    Alaboson, Justice M. P.; Wang, Qing Hua; Emery, Jonathan D.; Lipson, Albert L.; Bedzyk, Michael J.; Elam, Jeffrey W.; Pellin, Michael J.; Hersam, Mark C.

    2011-06-28

    The development of high-performance graphene-based nanoelectronics requires the integration of ultrathin and pinhole-free high-k dielectric films with graphene at the wafer scale. Here, we demonstrate that self-assembled monolayers of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) act as effective organic seeding layers for atomic layer deposition (ALD) of HfO₂ and Al₂O₃ on epitaxial graphene on SiC(0001). The PTCDA is deposited via sublimation in ultrahigh vacuum and shown to be highly ordered with low defect density by molecular-resolution scanning tunneling microscopy. Whereas identical ALD conditions lead to incomplete and rough dielectric deposition on bare graphene, the chemical functionality provided by the PTCDA seeding layer yields highly uniform and conformal films. The morphology and chemistry of the dielectric films are characterized by atomic force microscopy, ellipsometry, cross-sectional scanning electron microscopy, and X-ray photoelectron spectroscopy, while high-resolution X-ray reflectivity measurements indicate that the underlying graphene remains intact following ALD. Using the PTCDA seeding layer, metal-oxide-graphene capacitors fabricated with a 3 nm Al₂O₃ and 10 nm HfO₂ dielectric stack show high capacitance values of ~700 nF/cm² and low leakage currents of ~5 × 10{sup –9} A/cm² at 1 V applied bias. These results demonstrate the viability of sublimated organic self-assembled monolayers as seeding layers for high-k dielectric films in graphene-based nanoelectronics.

  14. Quantitative secondary electron imaging for work function extraction at atomic level and layer identification of graphene

    PubMed Central

    Zhou, Yangbo; Fox, Daniel S; Maguire, Pierce; O’Connell, Robert; Masters, Robert; Rodenburg, Cornelia; Wu, Hanchun; Dapor, Maurizio; Chen, Ying; Zhang, Hongzhou

    2016-01-01

    Two-dimensional (2D) materials usually have a layer-dependent work function, which require fast and accurate detection for the evaluation of their device performance. A detection technique with high throughput and high spatial resolution has not yet been explored. Using a scanning electron microscope, we have developed and implemented a quantitative analytical technique which allows effective extraction of the work function of graphene. This technique uses the secondary electron contrast and has nanometre-resolved layer information. The measurement of few-layer graphene flakes shows the variation of work function between graphene layers with a precision of less than 10 meV. It is expected that this technique will prove extremely useful for researchers in a broad range of fields due to its revolutionary throughput and accuracy. PMID:26878907

  15. Topography, complex refractive index, and conductivity of graphene layers measured by correlation of optical interference contrast, atomic force, and back scattered electron microscopy

    SciTech Connect

    Vaupel, Matthias Dutschke, Anke; Wurstbauer, Ulrich; Pasupathy, Abhay; Hitzel, Frank

    2013-11-14

    The optical phase shift by reflection on graphene is measured by interference contrast microscopy. The height profile across graphene layers on 300 nm thick SiO{sub 2} on silicon is derived from the phase profile. The complex refractive index and conductivity of graphene layers on silicon with 2 nm thin SiO{sub 2} are evaluated from a phase profile, while the height profile of the layers is measured by atomic force microscopy. It is observed that the conductivity measured on thin SiO{sub 2} is significantly greater than on thick SiO{sub 2}. Back scattered electron contrast of graphene layers is correlated to the height of graphene layers.

  16. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts

    SciTech Connect

    Gearba, Raluca I.; Mueller, Kory M.; Veneman, Peter A.; Holliday, Bradley J.; Chan, Calvin K.; Stevenson, Keith J.

    2015-05-09

    Owing to its high conductivity, graphene holds promise as an electrode for energy devices such as batteries and photovoltaics. However, to this end, the work function and doping levels in graphene need to be precisely tuned. One promising route for modifying graphene’s electronic properties is via controlled covalent electrochemical grafting of molecules. We show that by employing diaryliodonium salts instead of the commonly used diazonium salts, spontaneous functionalization is avoided. This then allows for precise tuning of the grafting density. Moreover, by employing bis(4-nitrophenyl)iodonium(III) tetrafluoroborate (DNP) salt calibration curves, the surface functionalization density (coverage) of glassy carbon was controlled using cyclic voltammetry in varying salt concentrations. These electro-grafting conditions and calibration curves translated directly over to modifying single layer epitaxial graphene substrates (grown on insulating 6H-SiC (0 0 0 1)). In addition to quantifying the functionalization densities using electrochemical methods, samples with low grafting densities were characterized by low-temperature scanning tunneling microscopy (LT-STM). We show that the use of buffer-layer free graphene substrates is required for clear observation of the nitrophenyl modifications. Furthermore, atomically-resolved STM images of single site modifications were obtained, showing no preferential grafting at defect sites or SiC step edges as supposed previously in the literature. Most of the grafts exhibit threefold symmetry, but occasional extended modifications (larger than 4 nm) were observed as well.

  17. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts

    DOE PAGES

    Gearba, Raluca I.; Mueller, Kory M.; Veneman, Peter A.; Holliday, Bradley J.; Chan, Calvin K.; Stevenson, Keith J.

    2015-05-09

    Owing to its high conductivity, graphene holds promise as an electrode for energy devices such as batteries and photovoltaics. However, to this end, the work function and doping levels in graphene need to be precisely tuned. One promising route for modifying graphene’s electronic properties is via controlled covalent electrochemical grafting of molecules. We show that by employing diaryliodonium salts instead of the commonly used diazonium salts, spontaneous functionalization is avoided. This then allows for precise tuning of the grafting density. Moreover, by employing bis(4-nitrophenyl)iodonium(III) tetrafluoroborate (DNP) salt calibration curves, the surface functionalization density (coverage) of glassy carbon was controlled usingmore » cyclic voltammetry in varying salt concentrations. These electro-grafting conditions and calibration curves translated directly over to modifying single layer epitaxial graphene substrates (grown on insulating 6H-SiC (0 0 0 1)). In addition to quantifying the functionalization densities using electrochemical methods, samples with low grafting densities were characterized by low-temperature scanning tunneling microscopy (LT-STM). We show that the use of buffer-layer free graphene substrates is required for clear observation of the nitrophenyl modifications. Furthermore, atomically-resolved STM images of single site modifications were obtained, showing no preferential grafting at defect sites or SiC step edges as supposed previously in the literature. Most of the grafts exhibit threefold symmetry, but occasional extended modifications (larger than 4 nm) were observed as well.« less

  18. Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes.

    PubMed

    Martin, Marie-Blandine; Dlubak, Bruno; Weatherup, Robert S; Yang, Heejun; Deranlot, Cyrile; Bouzehouane, Karim; Petroff, Frédéric; Anane, Abdelmadjid; Hofmann, Stephan; Robertson, John; Fert, Albert; Seneor, Pierre

    2014-08-26

    We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.

  19. Chemistry and physics of a single atomic layer: strategies and challenges for functionalization of graphene and graphene-based materials.

    PubMed

    Yan, Liang; Zheng, Yue Bing; Zhao, Feng; Li, Shoujian; Gao, Xingfa; Xu, Bingqian; Weiss, Paul S; Zhao, Yuliang

    2012-01-01

    Graphene has attracted great interest for its superior physical, chemical, mechanical, and electrical properties that enable a wide range of applications from electronics to nanoelectromechanical systems. Functionalization is among the significant vectors that drive graphene towards technological applications. While the physical properties of graphene have been at the center of attention, we still lack the knowledge framework for targeted graphene functionalization. In this critical review, we describe some of the important chemical and physical processes for graphene functionalization. We also identify six major challenges in graphene research and give perspectives and practical strategies for both fundamental studies and applications of graphene (315 references).

  20. Bottom-gate coplanar graphene transistors with enhanced graphene adhesion on atomic layer deposition Al{sub 2}O{sub 3}

    SciTech Connect

    Park, Dong-Wook; Mikael, Solomon; Chang, Tzu-Hsuan; Ma, Zhenqiang; Gong, Shaoqin

    2015-03-09

    A graphene transistor with a bottom-gate coplanar structure and an atomic layer deposition (ALD) aluminum oxide (Al{sub 2}O{sub 3}) gate dielectric is demonstrated. Wetting properties of ALD Al{sub 2}O{sub 3} under different deposition conditions are investigated by measuring the surface contact angle. It is observed that the relatively hydrophobic surface is suitable for adhesion between graphene and ALD Al{sub 2}O{sub 3}. To achieve hydrophobic surface of ALD Al{sub 2}O{sub 3}, a methyl group (CH{sub 3})-terminated deposition method has been developed and compared with a hydroxyl group (OH)-terminated deposition. Based on this approach, bottom-gate coplanar graphene field-effect transistors are fabricated and characterized. A post-thermal annealing process improves the performance of the transistors by enhancing the contacts between the source/drain metal and graphene. The fabricated transistor shows an I{sub on}/I{sub off} ratio, maximum transconductance, and field-effect mobility of 4.04, 20.1 μS at V{sub D} = 0.1 V, and 249.5 cm{sup 2}/V·s, respectively.

  1. Oxidation Resistance of Reactive Atoms in Graphene

    SciTech Connect

    Chisholm, Matthew F; Duscher, Gerd; Windl, Wolfgang

    2012-01-01

    We have found that reactive elements that are normally oxidized at room temperature are present as individual atoms or clusters on and in graphene. Oxygen is present in these samples but it is only detected in the thicker amorphous carbon layers present in the graphene specimens we have examined. However, we have seen no evidence that oxygen reacts with the impurity atoms and small clusters of these normally reactive elements when they are incorporated in the graphene layers. First principles calculations suggest that the oxidation resistance is due to kinetic effects such as preferential bonding of oxygen to nonincorporated atoms and H passivation. The observed oxidation resistance of reactive atoms in graphene may allow the use of these incorporated metals in catalytic applications. It also opens the possibility of designing and producing electronic, opto-electronic, and magnetic devices based on these normally reactive atoms.

  2. Free-standing graphene at atomic resolution.

    PubMed

    Gass, Mhairi H; Bangert, Ursel; Bleloch, Andrew L; Wang, Peng; Nair, Rahul R; Geim, A K

    2008-11-01

    Research interest in graphene, a two-dimensional crystal consisting of a single atomic plane of carbon atoms, has been driven by its extraordinary properties, including charge carriers that mimic ultra-relativistic elementary particles. Moreover, graphene exhibits ballistic electron transport on the submicrometre scale, even at room temperature, which has allowed the demonstration of graphene-based field-effect transistors and the observation of a room-temperature quantum Hall effect. Here we confirm the presence of free-standing, single-layer graphene with directly interpretable atomic-resolution imaging combined with the spatially resolved study of both the pi --> pi* transition and the pi + sigma plasmon. We also present atomic-scale observations of the morphology of free-standing graphene and explore the role of microstructural peculiarities that affect the stability of the sheets. We also follow the evolution and interaction of point defects and suggest a mechanism by which they form ring defects.

  3. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

    PubMed

    Heilmann, Martin; Munshi, A Mazid; Sarau, George; Göbelt, Manuela; Tessarek, Christian; Fauske, Vidar T; van Helvoort, Antonius T J; Yang, Jianfeng; Latzel, Michael; Hoffmann, Björn; Conibeer, Gavin; Weman, Helge; Christiansen, Silke

    2016-06-01

    The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts.

  4. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

    PubMed

    Heilmann, Martin; Munshi, A Mazid; Sarau, George; Göbelt, Manuela; Tessarek, Christian; Fauske, Vidar T; van Helvoort, Antonius T J; Yang, Jianfeng; Latzel, Michael; Hoffmann, Björn; Conibeer, Gavin; Weman, Helge; Christiansen, Silke

    2016-06-01

    The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts. PMID:27124605

  5. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

    PubMed Central

    Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

    2016-01-01

    The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer. PMID:26861833

  6. Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition.

    PubMed

    Zheng, Li; Cheng, Xinhong; Yu, Yuehui; Xie, Yahong; Li, Xiaolong; Wang, Zhongjian

    2015-02-01

    Graphene has been drawing worldwide attention since its discovery in 2004. In order to realize graphene-based devices, thin, uniform-coverage and pinhole-free dielectric films with high permittivity on top of graphene are required. Here we report the direct growth of Al2O3-doped HfO2 films onto graphene by H2O-based atom layer deposition (ALD). Al2O3-onto-HfO2 stacks benefited the doping of Al2O3 into HfO2 matrices more than HfO2-onto-Al2O3 stacks did due to the micro-molecular property of Al2O3 and the high chemical activity of trimethylaluminum (TMA). Al2O3 acted as a network modifier, maintained the amorphous structure of the film even to 800 °C, and made the film smooth with a root mean square (RMS) roughness of 0.8 nm, comparable to the surface of pristine graphene. The capacitance and the relative permittivity of Al2O3-onto-HfO2 stacks were up to 1.18 μF cm(-2) and 12, respectively, indicating the high quality of Al2O3-doped HfO2 films on graphene. Moreover, the growth process of Al2O3-doped HfO2 films introduced no detective defects into graphene confirmed by Raman measurements. PMID:25519447

  7. Intercalation of graphene on iridium with sodium atoms

    NASA Astrophysics Data System (ADS)

    Rut'kov, E. V.; Gall', N. R.

    2015-06-01

    It has been shown that sodium atoms deposited on the surface of graphene atop iridium at T ≤ 850 K diffuse under the graphene layer into an intercalated state and accumulate there in significant concentrations ˜(2-3) × 1014 atoms cm-2. The release of the atoms from under the graphene "carpet" takes place upon destruction of the layer at T ≥ 1800 K. The physical nature of the differences in the processes of release of atoms of different alkali metals from under graphene has been discussed.

  8. Dual-protection of a graphene-sulfur composite by a compact graphene skin and an atomic layer deposited oxide coating for a lithium-sulfur battery.

    PubMed

    Yu, Mingpeng; Wang, Aiji; Tian, Fuyang; Song, Hongquan; Wang, Yinshu; Li, Chun; Hong, Jong-Dal; Shi, Gaoquan

    2015-03-12

    A reduced graphene oxide (rGO)-sulfur composite aerogel with a compact self-assembled rGO skin was further modified by an atomic layer deposition (ALD) of ZnO or MgO layer, and used as a free-standing electrode material of a lithium-sulfur (Li-S) battery. The rGO skin and ALD-oxide coating worked as natural and artificial barriers to constrain the polysulfides within the cathode region. As a result, the Li-S battery based on this electrode material exhibited superior cycling stability, good rate capability and high coulombic efficiency. Furthermore, ALD-ZnO coating was tested for performance improvement and found to be more effective than ALD-MgO coating. The ZnO modified G-S electrode with 55 wt% sulfur loading delivered a maximum discharge capacity of 998 mA h g(-1) at a current density of 0.2 C. A high capacity of 846 mA h g(-1) was achieved after charging/discharging for 100 cycles with a coulombic efficiency of over 92%. In the case of using LiNO3 as a shuttle inhibitor, this electrode showed an initial discharge capacity of 796 mA h g(-1) and a capacity retention of 81% after 250 cycles at a current density of 1 C with an average coulombic efficiency higher than 99.7%.

  9. Dual-protection of a graphene-sulfur composite by a compact graphene skin and an atomic layer deposited oxide coating for a lithium-sulfur battery

    NASA Astrophysics Data System (ADS)

    Yu, Mingpeng; Wang, Aiji; Tian, Fuyang; Song, Hongquan; Wang, Yinshu; Li, Chun; Hong, Jong-Dal; Shi, Gaoquan

    2015-03-01

    A reduced graphene oxide (rGO)-sulfur composite aerogel with a compact self-assembled rGO skin was further modified by an atomic layer deposition (ALD) of ZnO or MgO layer, and used as a free-standing electrode material of a lithium-sulfur (Li-S) battery. The rGO skin and ALD-oxide coating worked as natural and artificial barriers to constrain the polysulfides within the cathode region. As a result, the Li-S battery based on this electrode material exhibited superior cycling stability, good rate capability and high coulombic efficiency. Furthermore, ALD-ZnO coating was tested for performance improvement and found to be more effective than ALD-MgO coating. The ZnO modified G-S electrode with 55 wt% sulfur loading delivered a maximum discharge capacity of 998 mA h g-1 at a current density of 0.2 C. A high capacity of 846 mA h g-1 was achieved after charging/discharging for 100 cycles with a coulombic efficiency of over 92%. In the case of using LiNO3 as a shuttle inhibitor, this electrode showed an initial discharge capacity of 796 mA h g-1 and a capacity retention of 81% after 250 cycles at a current density of 1 C with an average coulombic efficiency higher than 99.7%.A reduced graphene oxide (rGO)-sulfur composite aerogel with a compact self-assembled rGO skin was further modified by an atomic layer deposition (ALD) of ZnO or MgO layer, and used as a free-standing electrode material of a lithium-sulfur (Li-S) battery. The rGO skin and ALD-oxide coating worked as natural and artificial barriers to constrain the polysulfides within the cathode region. As a result, the Li-S battery based on this electrode material exhibited superior cycling stability, good rate capability and high coulombic efficiency. Furthermore, ALD-ZnO coating was tested for performance improvement and found to be more effective than ALD-MgO coating. The ZnO modified G-S electrode with 55 wt% sulfur loading delivered a maximum discharge capacity of 998 mA h g-1 at a current density of 0.2 C. A

  10. Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

    NASA Astrophysics Data System (ADS)

    Jeong, Seong-Jun; Kim, Hyo Won; Heo, Jinseong; Lee, Min-Hyun; Song, Hyun Jae; Ku, JiYeon; Lee, Yunseong; Cho, Yeonchoo; Jeon, Woojin; Suh, Hwansoo; Hwang, Sungwoo; Park, Seongjun

    2016-09-01

    Among the most fundamental challenges encountered in the successful incorporation of graphene in silicon-based electronics is the conformal growth of ultrathin dielectric films, especially those with thicknesses lower than 5 nm, on chemically inert graphene surfaces. Here, we present physisorbed-precursor-assisted atomic layer deposition (pALD) as an extremely robust method for fabricating such films. Using atomic-scale characterisation, it is confirmed that conformal and intact ultrathin Al2O3 films can be synthesised on graphene by pALD. The mechanism underlying the pALD process is identified through first-principles calculations based on density functional theory. Further, this novel deposition technique is used to fabricate two types of wafer-scale devices. It is found that the incorporation of a 5 nm-thick pALD Al2O3 gate dielectric film improves the performance of metal-oxide-graphene field-effect transistors to a greater extent than does the incorporation of a conventional ALD Al2O3 film. We also employ a 5 nm-thick pALD HfO2 film as a highly scalable dielectric layer with a capacitance equivalent oxide thickness of 1 nm in graphene-based tunnelling field-effect transistors fabricated on a glass wafer and achieve a subthreshold swing of 30 mV/dec. This significant improvement in switching allows for the low-voltage operation of an inverter within 0.5 V of both the drain and the gate voltages, thus paving the way for low-power electronics.

  11. Interactions of Pb and Te atoms with graphene.

    PubMed

    Gong, Chuncheng; Robertson, Alex W; He, Kuang; Ford, Camden; Watt, Andrew A R; Warner, Jamie H

    2014-05-28

    PbTe nanocrystals were deposited onto the surface of graphene and used as a reservoir of Pb and Te atoms. Electron beam irradiation at 80 kV caused Pb and Te atoms to mobilize and disperse across the surface of graphene. We studied the dynamics of these atoms in real time using aberration-corrected transmission electron microscopy. The Pb and Te atoms were found to attach to the surface layer of amorphous carbon that resides upon the graphene, as well as its edge. Pb and Te atoms were not found residing on pristine graphene, but were found to bond to the free edge states along graphene hole edges. Small PbTe nanoclusters tended to only form on the surface of the amorphous carbon regions and not on pristine graphene.

  12. Atomic Covalent Functionalization of Graphene

    PubMed Central

    Johns, James E.; Hersam, Mark C.

    2012-01-01

    Conspectus Although graphene’s physical structure is a single atom thick, two-dimensional, hexagonal crystal of sp2 bonded carbon, this simple description belies the myriad interesting and complex physical properties attributed to this fascinating material. Because of its unusual electronic structure and superlative properties, graphene serves as a leading candidate for many next generation technologies including high frequency electronics, broadband photodetectors, biological and gas sensors, and transparent conductive coatings. Despite this promise, researchers could apply graphene more routinely in real-world technologies if they could chemically adjust graphene’s electronic properties. For example, the covalent modification of graphene to create a band gap comparable to silicon (~1 eV) would enable its use in digital electronics, and larger band gaps would provide new opportunities for graphene-based photonics. Towards this end, researchers have focused considerable effort on the chemical functionalization of graphene. Due to its high thermodynamic stability and chemical inertness, new methods and techniques are required to create covalent bonds without promoting undesirable side reactions or irreversible damage to the underlying carbon lattice. In this Account, we review and discuss recent theoretical and experimental work studying covalent modifications to graphene using gas phase atomic radicals. Atomic radicals have sufficient energy to overcome the kinetic and thermodynamic barriers associated with covalent reactions on the basal plane of graphene but lack the energy required to break the C-C sigma bonds that would destroy the carbon lattice. Furthermore, because they are atomic species, radicals substantially reduce the likelihood of unwanted side reactions that confound other covalent chemistries. Overall, these methods based on atomic radicals show promise for the homogeneous functionalization of graphene and the production of new classes of two

  13. Atomic Layer Epitaxy of h-BN(0001) Multilayers on Co(0001) and Molecular Beam Epitaxy Growth of Graphene on h-BN(0001)/Co(0001).

    PubMed

    Driver, M Sky; Beatty, John D; Olanipekun, Opeyemi; Reid, Kimberly; Rath, Ashutosh; Voyles, Paul M; Kelber, Jeffry A

    2016-03-22

    The direct growth of hexagonal boron nitride (h-BN) by industrially scalable methods is of broad interest for spintronic and nanoelectronic device applications. Such applications often require atomically precise control of film thickness and azimuthal registry between layers and substrate. We report the formation, by atomic layer epitaxy (ALE), of multilayer h-BN(0001) films (up to 7 monolayers) on Co(0001). The ALE process employs BCl3/NH3 cycles at 600 K substrate temperature. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) data show that this process yields an increase in h-BN average film thickness linearly proportional to the number of BCl3/NH3 cycles, with BN layers in azimuthal registry with each other and with the Co(0001) substrate. LEED diffraction spot profile data indicate an average BN domain size of at least 1900 Å. Optical microscopy data indicate the presence of some domains as large as ∼20 μm. Transmission electron microscopy (TEM) and ambient exposure studies demonstrate macroscopic and microscopic continuity of the h-BN film, with the h-BN film highly conformal to the Co substrate. Photoemission data show that the h-BN(0001) film is p-type, with band bending near the Co/h-BN interface. Growth of graphene by molecular beam epitaxy (MBE) is observed on the surface of multilayer h-BN(0001) at temperatures of 800 K. LEED data indicate azimuthal graphene alignment with the h-BN and Co(0001) lattices, with domain size similar to BN. The evidence of multilayer BN and graphene azimuthal alignment with the lattice of the Co(0001) substrate demonstrates that this procedure is suitable for scalable production of heterojunctions for spintronic applications.

  14. Intercalation of graphene on iridium with samarium atoms

    NASA Astrophysics Data System (ADS)

    Afanas'eva, E. Yu.; Rut'kov, E. V.; Gall, N. R.

    2016-07-01

    Intercalation of graphene on Ir (111) with Sm atoms is studied by methods of thermal desorption spectroscopy and thermionic emission. It is shown that adsorption of samarium at T = 300 K on graphene to concentrations of N ≤ 6 × 1014 atoms cm-2 followed by heating of the substrate leads to practically complete escape of adsorbate underneath the graphene layer. At N > 6 × 1014 atoms cm-2 and increasing temperature, a fraction of adsorbate remains on graphene in the form of two-dimensional "gas" and samarium islands and are desorbed in the range of temperatures of 1000-1200 K. Samarium remaining under the graphene is desorbed from the surface in the temperature range 1200-2150 K. Model conceptions for the samarium-graphene-iridium system in a wide temperature range are developed.

  15. Atomic resolution imaging of graphene by transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Robertson, Alex W.; Warner, Jamie H.

    2013-05-01

    The atomic structure of a material influences its electronic, chemical, magnetic and mechanical properties. Characterising carbon nanomaterials, such as fullerenes, nanotubes and graphene, at the atomic level is challenging due to their chemical reactivity and low atomic mass. Transmission electron microscopy and scanning probe microscopy are two of the leading methods for imaging graphene at the atomic level. Here, we report on recent advances in atomic resolution imaging of graphene using aberration-corrected high resolution transmission electron microscopy and how it has revealed many of the structural deviations from the pristine monolayer form. Structures in graphene such as vacancy defects, edges, grain boundaries, linear chains, impurity dopants, layer number, layer stacking and bond rotations are explored.

  16. Electrochemistry at Edge of Single Graphene Layer in a Nanopore

    PubMed Central

    Banerjee, Shouvik; Shim, Jiwook; Rivera, Jose; Jin, Xiaozhong; Estrada, David; Solovyeva, Vita; You, Xiuque; Pak, James; Pop, Eric; Aluru, Narayana; Bashir, Rashid

    2013-01-01

    We study the electrochemistry of single layer graphene edges using a nanopore-based structure consisting of stacked graphene and Al2O3 dielectric layers. Nanopores, with diameters ranging from 5 to 20 nm, are formed by an electron beam sculpting process on the stacked layers. This leads to unique edge structure which, along with the atomically thin nature of the embedded graphene electrode, demonstrates electrochemical current densities as high as 1.2 × 104 A/cm2. The graphene edge embedded structure offers a unique capability to study the electrochemical exchange at an individual graphene edge, isolated from the basal plane electrochemical activity. We also report ionic current modulation in the nanopore by biasing the embedded graphene terminal with respect to the electrodes in the fluid. The high electrochemical specific current density for a graphene nanopore-based device can have many applications in sensitive chemical and biological sensing, and energy storage devices. PMID:23249127

  17. Burning Graphene Layer-by-Layer.

    PubMed

    Ermakov, Victor A; Alaferdov, Andrei V; Vaz, Alfredo R; Perim, Eric; Autreto, Pedro A S; Paupitz, Ricardo; Galvao, Douglas S; Moshkalev, Stanislav A

    2015-01-01

    Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in "cold-wall" reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material.

  18. Burning Graphene Layer-by-Layer.

    PubMed

    Ermakov, Victor A; Alaferdov, Andrei V; Vaz, Alfredo R; Perim, Eric; Autreto, Pedro A S; Paupitz, Ricardo; Galvao, Douglas S; Moshkalev, Stanislav A

    2015-01-01

    Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in "cold-wall" reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material. PMID:26100466

  19. Atomically precise bottom-up fabrication of graphene nanoribbons.

    PubMed

    Cai, Jinming; Ruffieux, Pascal; Jaafar, Rached; Bieri, Marco; Braun, Thomas; Blankenburg, Stephan; Muoth, Matthias; Seitsonen, Ari P; Saleh, Moussa; Feng, Xinliang; Müllen, Klaus; Fasel, Roman

    2010-07-22

    Graphene nanoribbons-narrow and straight-edged stripes of graphene, or single-layer graphite-are predicted to exhibit electronic properties that make them attractive for the fabrication of nanoscale electronic devices. In particular, although the two-dimensional parent material graphene exhibits semimetallic behaviour, quantum confinement and edge effects should render all graphene nanoribbons with widths smaller than 10 nm semiconducting. But exploring the potential of graphene nanoribbons is hampered by their limited availability: although they have been made using chemical, sonochemical and lithographic methods as well as through the unzipping of carbon nanotubes, the reliable production of graphene nanoribbons smaller than 10 nm with chemical precision remains a significant challenge. Here we report a simple method for the production of atomically precise graphene nanoribbons of different topologies and widths, which uses surface-assisted coupling of molecular precursors into linear polyphenylenes and their subsequent cyclodehydrogenation. The topology, width and edge periphery of the graphene nanoribbon products are defined by the structure of the precursor monomers, which can be designed to give access to a wide range of different graphene nanoribbons. We expect that our bottom-up approach to the atomically precise fabrication of graphene nanoribbons will finally enable detailed experimental investigations of the properties of this exciting class of materials. It should even provide a route to graphene nanoribbon structures with engineered chemical and electronic properties, including the theoretically predicted intraribbon quantum dots, superlattice structures and magnetic devices based on specific graphene nanoribbon edge states. PMID:20651687

  20. Fe-catalyzed etching of graphene layers

    NASA Astrophysics Data System (ADS)

    Cheng, Guangjun; Calizo, Irene; Hight Walker, Angela; PML, NIST Team

    We investigate the Fe-catalyzed etching of graphene layers in forming gas. Fe thin films are deposited by sputtering onto mechanically exfoliated graphene, few-layer graphene (FLG), and graphite flakes on a Si/SiO2 substrate. When the sample is rapidly annealed in forming gas, particles are produced due to the dewetting of the Fe thin film and those particles catalyze the etching of graphene layers. Monolayer graphene and FLG regions are severely damaged and that the particles catalytically etch channels in graphite. No etching is observed on graphite for the Fe thin film annealed in nitrogen. The critical role of hydrogen indicates that this graphite etching process is catalyzed by Fe particles through the carbon hydrogenation reaction. By comparing with the etched monolayer and FLG observed for the Fe film annealed in nitrogen, our Raman spectroscopy measurements identify that, in forming gas, the catalytic etching of monolayer and FLG is through carbon hydrogenation. During this process, Fe particles are catalytically active in the dissociation of hydrogen into hydrogen atoms and in the production of hydrogenated amorphous carbon through hydrogen spillover.

  1. In situ imaging and control of layer-by-layer femtosecond laser thinning of graphene.

    PubMed

    Li, D W; Zhou, Y S; Huang, X; Jiang, L; Silvain, J-F; Lu, Y F

    2015-02-28

    Although existing methods (chemical vapor deposition, mechanical exfoliation, etc.) are available to produce graphene, the lack of thickness control limits further graphene applications. In this study, we demonstrate an approach to precisely thin graphene films to a specific thickness using femtosecond (fs) laser raster scanning. By using appropriate laser fluence and scanning times, graphene thinning with an atomic layer precision, namely layer-by-layer graphene removal, has been realized. The fs laser used was configured in a four-wave mixing (FWM) system which can be used to distinguish graphene layer thickness and count the number of layers using the linear relationship between the FWM signal intensity and the graphene thickness. Furthermore, FWM imaging has been successfully applied to achieve in situ, real-time monitoring of the fs laser graphene thinning process. This method can not only realize the large-scale thinning of graphene with atomic layer precision, but also provide in situ, rapid imaging capability of graphene for an accurate assessment of the number of layers.

  2. Nano-soldering to single atomic layer

    DOEpatents

    Girit, Caglar O.; Zettl, Alexander K.

    2011-10-11

    A simple technique to solder submicron sized, ohmic contacts to nanostructures has been disclosed. The technique has several advantages over standard electron beam lithography methods, which are complex, costly, and can contaminate samples. To demonstrate the soldering technique graphene, a single atomic layer of carbon, has been contacted, and low- and high-field electronic transport properties have been measured.

  3. Layer-by-layer assembly of vertically conducting graphene devices.

    PubMed

    Chen, Jing-Jing; Meng, Jie; Zhou, Yang-Bo; Wu, Han-Chun; Bie, Ya-Qing; Liao, Zhi-Min; Yu, Da-Peng

    2013-01-01

    Graphene has various potential applications owing to its unique electronic, optical, mechanical and chemical properties, which are primarily based on its two-dimensional nature. Graphene-based vertical devices can extend the investigations and potential applications range to three dimensions, while interfacial properties are crucial for the function and performance of such graphene vertical devices. Here we report a general method to construct graphene vertical devices with controllable functions via choosing different interfaces between graphene and other materials. Two types of vertically conducting devices are demonstrated: graphene stacks sandwiched between two Au micro-strips, and between two Co layers. The Au|graphene|Au junctions exhibit large magnetoresistance with ratios up to 400% at room temperature, which have potential applications in magnetic field sensors. The Co|graphene|Co junctions display a robust spin valve effect at room temperature. The layer-by-layer assembly of graphene offers a new route for graphene vertical structures. PMID:23715280

  4. Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene

    NASA Astrophysics Data System (ADS)

    Kim, Keun Su; Kim, Tae-Hwan; Walter, Andrew L.; Seyller, Thomas; Yeom, Han Woong; Rotenberg, Eli; Bostwick, Aaron

    2013-01-01

    We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices.

  5. Visualizing atomic-scale negative differential resistance in bilayer graphene.

    PubMed

    Kim, Keun Su; Kim, Tae-Hwan; Walter, Andrew L; Seyller, Thomas; Yeom, Han Woong; Rotenberg, Eli; Bostwick, Aaron

    2013-01-18

    We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices. PMID:23373943

  6. Remote catalyzation for direct formation of graphene layers on oxides.

    PubMed

    Teng, Po-Yuan; Lu, Chun-Chieh; Akiyama-Hasegawa, Kotone; Lin, Yung-Chang; Yeh, Chao-Hui; Suenaga, Kazu; Chiu, Po-Wen

    2012-03-14

    Direct deposition of high-quality graphene layers on insulating substrates such as SiO(2) paves the way toward the development of graphene-based high-speed electronics. Here, we describe a novel growth technique that enables the direct deposition of graphene layers on SiO(2) with crystalline quality potentially comparable to graphene grown on Cu foils using chemical vapor deposition (CVD). Rather than using Cu foils as substrates, our approach uses them to provide subliming Cu atoms in the CVD process. The prime feature of the proposed technique is remote catalyzation using floating Cu and H atoms for the decomposition of hydrocarbons. This allows for the direct graphitization of carbon radicals on oxide surfaces, forming isolated low-defect graphene layers without the need for postgrowth etching or evaporation of the metal catalyst. The defect density of the resulting graphene layers can be significantly reduced by tuning growth parameters such as the gas ratios, Cu surface areas, and substrate-to-Cu distance. Under optimized conditions, graphene layers with nondiscernible Raman D peaks can be obtained when predeposited graphite flakes are used as seeds for extended growth. PMID:22332771

  7. Electronic and Quantum Transport Properties of Atomically Identified Si Point Defects in Graphene.

    PubMed

    Lopez-Bezanilla, Alejandro; Zhou, Wu; Idrobo, Juan-Carlos

    2014-05-15

    We report high-resolution scanning transmission electron microscopy images displaying a range of inclusions of isolated silicon atoms at the edges and inner zones of graphene layers. Whereas the incorporation of Si atoms to a graphene armchair edge involves no reconstruction of the neighboring carbon atoms, the inclusion of a Si atom to a zigzag graphene edge entails the formation of five-membered carbon rings. In all the observed atomic edge terminations, a Si atom is found bridging two C atoms in a 2-fold coordinated configuration. The atomic-scale observations are underpinned by first-principles calculations of the electronic and quantum transport properties of the structural anomalies. Experimental estimations of Si-doped graphene band gaps realized by means of transport measurements may be affected by a low doping rate of 2-fold coordinated Si atoms at the graphene edges, and 4-fold coordinated at inner zones due to the apparition of mobility gaps. PMID:26270371

  8. Amorphous Ultrathin SnO2 Films by Atomic Layer Deposition on Graphene Network as Highly Stable Anodes for Lithium-Ion Batteries.

    PubMed

    Xie, Ming; Sun, Xiang; George, Steven M; Zhou, Changgong; Lian, Jie; Zhou, Yun

    2015-12-23

    Amorphous SnO2 (a-SnO2) thin films were conformally coated onto the surface of reduced graphene oxide (G) using atomic layer deposition (ALD). The electrochemical characteristics of the a-SnO2/G nanocomposites were then determined using cyclic voltammetry and galvanostatic charge/discharge curves. Because the SnO2 ALD films were ultrathin and amorphous, the impact of the large volume expansion of SnO2 upon cycling was greatly reduced. With as few as five formation cycles best reported in the literature, a-SnO2/G nanocomposites reached stable capacities of 800 mAh g(-1) at 100 mA g(-1) and 450 mAh g(-1) at 1000 mA g(-1). The capacity from a-SnO2 is higher than the bulk theoretical values. The extra capacity is attributed to additional interfacial charge storage resulting from the high surface area of the a-SnO2/G nanocomposites. These results demonstrate that metal oxide ALD on high surface area conducting carbon substrates can be used to fabricate high power and high capacity electrode materials for lithium-ion batteries.

  9. Cleaning graphene with a titanium sacrificial layer

    SciTech Connect

    Joiner, C. A. Roy, T.; Hesabi, Z. R.; Vogel, E. M.; Chakrabarti, B.

    2014-06-02

    Graphene is a promising material for future electronic applications and chemical vapor deposition of graphene on copper is a promising method for synthesizing graphene on the wafer scale. The processing of such graphene films into electronic devices introduces a variety of contaminants which can be difficult to remove. An approach to cleaning residues from the graphene channel is presented in which a thin layer of titanium is deposited via thermal e-beam evaporation and immediately removed. This procedure does not damage the graphene as evidenced by Raman spectroscopy, greatly enhances the electrical performance of the fabricated graphene field effect transistors, and completely removes the chemical residues from the surface of the graphene channel as evidenced by x-ray photoelectron spectroscopy.

  10. Adsorption of ammonium on a pyridine-like nitrogen-doped graphene layer decorated with a monovalent atom

    NASA Astrophysics Data System (ADS)

    Magana, Luis Fernando; Ramirez, Juan M.; Vazquez, Gerardo Jorge

    2013-03-01

    Density functional theory and molecular dynamics were used to study the interaction of an NH4 molecule with a pyridine-like nitrogen-doped (PNG) surface. The surface is decorated with an impurity taken from the first row of the periodic table. In this way, we considered six different atoms: H, Li, Na, K, Rb and Cs, to decorate the system. We found two final configurations. One, is with the NH4 molecule physisorbed around the impurity. In the second situation, one hydrogen atom of the ammonium molecule, is adsorbed around a nitrogen atom of the surface. The remaining NH3 molecule stays physisorbed on the system. The final configuration depends on the initial position of the NH4 molecule. In all decoration cases, the system was allowed to follow an evolutionary process using molecular dynamics at 300 K, and atmospheric pressure.

  11. Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface

    SciTech Connect

    Yagyu, Kazuma; Tochihara, Hiroshi; Tomokage, Hajime; Suzuki, Takayuki; Tajiri, Takayuki; Kohno, Atsushi; Takahashi, Kazutoshi

    2014-02-03

    Cu atoms deposited on a zero layer graphene grown on a SiC(0001) substrate, intercalate between the zero layer graphene and the SiC substrate after the thermal annealing above 600 °C, forming a Cu-intercalated single layer graphene. On the Cu-intercalated single layer graphene, a graphene lattice with superstructure due to moiré pattern is observed by scanning tunneling microscopy, and specific linear dispersion at the K{sup ¯} point as well as a characteristic peak in a C{sub 1s} core level spectrum, which is originated from a free-standing graphene, is confirmed by photoemission spectroscopy. The Cu-intercalated single layer graphene is found to be n-doped.

  12. Enhancement of the Stability of Fluorine Atoms on Defective Graphene and at Graphene/Fluorographene Interface.

    PubMed

    Ao, Zhimin; Jiang, Quanguo; Li, Shuang; Liu, Hao; Peeters, Francois M; Li, Sean; Wang, Guoxiu

    2015-09-01

    Fluorinated graphene is one of the most important derivatives of graphene and has been found to have great potential in optoelectronic and photonic nanodevices. However, the stability of F atoms on fluorinated graphene under different conditions, which is essential to maintain the desired properties of fluorinated graphene, is still unclear. In this work, we investigate the diffusion of F atoms on pristine graphene, graphene with defects, and at graphene/fluorographene interfaces by using density functional theory calculations. We find that an isolated F atom diffuses easily on graphene, but those F atoms can be localized by inducing vacancies or absorbates in graphene and by creating graphene/fluorographene interfaces, which would strengthen the binding energy of F atoms on graphene and increase the diffusion energy barrier of F atoms remarkably.

  13. Formation of Silica/Graphene Oxide Hybrid Nano Films by Layer-by-Layer Self-Assembly and Biomimetic Silicification.

    PubMed

    Yang, Sung Ho

    2015-02-01

    Silica/graphene oxide hybrid thin films were formed by layer-by-layer self-assembly and biomimetic silicification, and the thickness and structure of hybrid thin films were finely controlled at the nanometer scale, by tuning number of the layer-by-layer process. The physical properties of thin films were characterized by infrared spectroscopy, atomic force microscopy, and scanning electron microscopy. In addition, silica/graphene oxide hybrid thin films were successfully utilized for cell culture platforms.

  14. Atomic resolution of nitrogen-doped graphene on Cu foils.

    PubMed

    Wang, Chundong; Schouteden, Koen; Wu, Qi-Hui; Li, Zhe; Jiang, Jianjun; Van Haesendonck, Chris

    2016-09-01

    Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene's electronic properties. PMID:27479275

  15. Atomically localized plasmon enhancement in monolayer graphene

    SciTech Connect

    Zhou, Wu; Lee, Jaekwang; Nanda, Jagjit; Pantelides, Sokrates T.; Pennycook, Stephen J; Idrobo Tapia, Juan C

    2012-01-01

    Plasmons in graphene can be tuned by using electrostatic gating or chemical doping, and the ability to confine plasmons in very small regions could have applications in optoelectronics, plasmonics and transformation optics. However, little is known about how atomic-scale defects influence the plasmonic properties of graphene. Moreover, the smallest localized plasmon resonance observed in any material to date has been limited to around 10 nm. Here, we show that surface plasmon resonances in graphene can be enhanced locally at the atomic scale. Using electron energy-loss spectrum imaging in an aberration-corrected scanning transmission electron microscope, we find that a single point defect can act as an atomic antenna in the petahertz (10{sup 15} Hz) frequency range, leading to surface plasmon resonances at the subnanometer scale.

  16. Counting graphene layers with very slow electrons

    SciTech Connect

    Frank, Ludĕk; Mikmeková, Eliška; Müllerová, Ilona; Lejeune, Michaël

    2015-01-05

    The study aimed at collection of data regarding the transmissivity of freestanding graphene for electrons across their full energy scale down to the lowest energies. Here, we show that the electron transmissivity of graphene drops with the decreasing energy of the electrons and remains below 10% for energies below 30 eV, and that the slow electron transmissivity value is suitable for reliable determination of the number of graphene layers. Moreover, electrons incident below 50 eV release adsorbed hydrocarbon molecules and effectively clean graphene in contrast to faster electrons that decompose these molecules and create carbonaceous contamination.

  17. Direct growth of multilayer graphene by precipitation using W capping layer

    NASA Astrophysics Data System (ADS)

    Yamada, Jumpei; Ueda, Yuki; Maruyama, Takahiro; Naritsuka, Shigeya

    2016-10-01

    In this study, the direct growth of multilayer graphene from amorphous carbon on a sapphire (0001) substrate by precipitation using a nickel catalyst layer and a tungsten capping layer was examined. The findings revealed that a tungsten carbide layer was formed on top of the catalyst, and this suppressed the diffusion of carbon atoms upwards towards the surface. This caused the graphene layer to precipitate below the catalyst layer rather than above it. Under optimized growth conditions, Raman spectroscopy indicated that a high-quality graphene layer was formed with a low D/G peak intensity ratio of 0.10.

  18. Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

    PubMed Central

    Telychko, Mykola; Berger, Jan; Majzik, Zsolt; Jelínek, Pavel

    2015-01-01

    Summary We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms. PMID:25977861

  19. Selective growth of Pb islands on graphene/SiC buffer layers

    SciTech Connect

    Liu, X. T.; Miao, Y. P.; Ma, D. Y.; Hu, T. W.; Ma, F. E-mail: kwxu@mail.xjtu.edu.cn; Chu, Paul K.; Xu, K. W. E-mail: kwxu@mail.xjtu.edu.cn

    2015-02-14

    Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6√(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.

  20. Protecting nickel with graphene spin-filtering membranes: A single layer is enough

    SciTech Connect

    Martin, M.-B.; Dlubak, B.; Piquemal-Banci, M.; Collin, S.; Petroff, F.; Anane, A.; Fert, A.; Seneor, P.; Yang, H.; Blume, R.; Schloegl, R.

    2015-07-06

    We report on the demonstration of ferromagnetic spin injectors for spintronics which are protected against oxidation through passivation by a single layer of graphene. The graphene monolayer is directly grown by catalytic chemical vapor deposition on pre-patterned nickel electrodes. X-ray photoelectron spectroscopy reveals that even with its monoatomic thickness, monolayer graphene still efficiently protects spin sources against oxidation in ambient air. The resulting single layer passivated electrodes are integrated into spin valves and demonstrated to act as spin polarizers. Strikingly, the atom-thick graphene layer is shown to be sufficient to induce a characteristic spin filtering effect evidenced through the sign reversal of the measured magnetoresistance.

  1. Protecting nickel with graphene spin-filtering membranes: A single layer is enough

    NASA Astrophysics Data System (ADS)

    Martin, M.-B.; Dlubak, B.; Weatherup, R. S.; Piquemal-Banci, M.; Yang, H.; Blume, R.; Schloegl, R.; Collin, S.; Petroff, F.; Hofmann, S.; Robertson, J.; Anane, A.; Fert, A.; Seneor, P.

    2015-07-01

    We report on the demonstration of ferromagnetic spin injectors for spintronics which are protected against oxidation through passivation by a single layer of graphene. The graphene monolayer is directly grown by catalytic chemical vapor deposition on pre-patterned nickel electrodes. X-ray photoelectron spectroscopy reveals that even with its monoatomic thickness, monolayer graphene still efficiently protects spin sources against oxidation in ambient air. The resulting single layer passivated electrodes are integrated into spin valves and demonstrated to act as spin polarizers. Strikingly, the atom-thick graphene layer is shown to be sufficient to induce a characteristic spin filtering effect evidenced through the sign reversal of the measured magnetoresistance.

  2. Metal oxide nanoparticle growth on graphene via chemical activation with atomic oxygen.

    PubMed

    Johns, James E; Alaboson, Justice M P; Patwardhan, Sameer; Ryder, Christopher R; Schatz, George C; Hersam, Mark C

    2013-12-01

    Chemically interfacing the inert basal plane of graphene with other materials has limited the development of graphene-based catalysts, composite materials, and devices. Here, we overcome this limitation by chemically activating epitaxial graphene on SiC(0001) using atomic oxygen. Atomic oxygen produces epoxide groups on graphene, which act as reactive nucleation sites for zinc oxide nanoparticle growth using the atomic layer deposition precursor diethyl zinc. In particular, exposure of epoxidized graphene to diethyl zinc abstracts oxygen, creating mobile species that diffuse on the surface to form metal oxide clusters. This mechanism is corroborated with a combination of scanning probe microscopy, Raman spectroscopy, and density functional theory and can likely be generalized to a wide variety of related surface reactions on graphene.

  3. Direct Growth Properties of Graphene Layers on Sapphire Substrate by Alcohol-Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Nakamura, Atsushi; Miyasaka, Yuta; Temmyo, Jiro

    2012-04-01

    Few nanometers thick graphene layers were directly grown on a-plane (11bar 20) sapphire substrates by alcohol-chemical vapor deposition (alcohol-CVD) using ethanol as a carbon source and without any catalytic metal on the substrate surface. The growth relationship between the graphene layer and substrate was analyzed using a transmission electron microscope (TEM). The growth rate of graphene layers with different growth temperatures revealed that the Al atom act as a catalyst for synthesizing a graphitic material during the decomposition of ethanol. An optical transmittance and a sheet resistance of the graphene sheet directly grown on sapphire substrate were observed. SiO2/Si and n-6H-SiC substrates were also examined for graphene direct growth to discuss the catalytic behavior of Si atoms compared with Al atoms.

  4. Excitonic Effects in Tungsten Disulfide Monolayers on Two-Layer Graphene.

    PubMed

    Giusca, Cristina E; Rungger, Ivan; Panchal, Vishal; Melios, Christos; Lin, Zhong; Lin, Yu-Chuan; Kahn, Ethan; Elías, Ana Laura; Robinson, Joshua A; Terrones, Mauricio; Kazakova, Olga

    2016-08-23

    Light emission in atomically thin heterostructures is known to depend on the type of materials and the number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the light emission. We study the layer-dependent charge transfer in vertical heterostructures built from monolayer tungsten disulfide (WS2) on one- and two-layer epitaxial graphene, unravelling the effect that the interlayer electronic coupling has on the excitonic properties of such heterostructures. We bring evidence that the excitonic properties of WS2 can be effectively tuned by the number of supporting graphene layers. Integrating WS2 monolayers with two-layer graphene leads to a significant enhancement of the photoluminescence response, up to 1 order of magnitude higher compared to WS2 supported on one-layer graphene. Our findings highlight the importance of substrate engineering when constructing atomically thin-layered heterostructures. PMID:27434813

  5. The Electronic Structure of Single-Layer Graphene

    NASA Astrophysics Data System (ADS)

    Siegel, David Alan

    Single-layer graphene has been widely researched in recent years due to its perceived technological applicability and its scientific importance as a unique model system with relativistic Dirac Fermions. Because of its unique geometric and electronic structure, the properties of graphene can be tuned or manipulated in several ways. This tunability is important for technological applications in its own right, and it also allows us to study the fundamental properties of Dirac Fermions, including unique many-body interactions and the nature of the quasiparticles at half-filling. This thesis is a detailed examination of the electronic and structural properties of graphene, studied with angle-resolved photoemission spectroscopy (ARPES) and other surface science techniques like low-energy electron microscopy and diffraction. This thesis is organized as follows. Chapter 1 gives an introduction to the electronic and structural properties of single-layer graphene. It provides a brief historical overview of major theoretical and experimental milestones and sets the stage for the important theoretical and experimental questions that this thesis addresses. Chapters 2 and 3 describe the experimental setup. Chapter 2 discusses the experimental techniques used in this thesis with particular focus on the mechanics of ARPES. Chapter 3 discusses the different graphene growth techniques that were used to create our sample with particular focus on our characterization of epitaxial graphene on SiC(0001). Chapters 4 and 5 form the meat of this thesis: they provide a thorough discussion of the electronic properties of graphene as studied by ARPES. Chapter 4 describes how various perturbations can result in the manipulation of the bare electronic band structure, including the deposition of atomic or molecular species on top of an epitaxial graphene sheet as well as the interactions between graphene and its substrate. Chapter 5 describes the many-body physics in single-layer graphene. It

  6. Atomic resolution of nitrogen-doped graphene on Cu foils

    NASA Astrophysics Data System (ADS)

    Wang, Chundong; Schouteden, Koen; Wu, Qi-Hui; Li, Zhe; Jiang, Jianjun; Van Haesendonck, Chris

    2016-09-01

    Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene’s electronic properties.

  7. Electronic structure of atomically precise graphene nanoribbons.

    PubMed

    Ruffieux, Pascal; Cai, Jinming; Plumb, Nicholas C; Patthey, Luc; Prezzi, Deborah; Ferretti, Andrea; Molinari, Elisa; Feng, Xinliang; Müllen, Klaus; Pignedoli, Carlo A; Fasel, Roman

    2012-08-28

    Some of the most intriguing properties of graphene are predicted for specifically designed nanostructures such as nanoribbons. Functionalities far beyond those known from extended graphene systems include electronic band gap variations related to quantum confinement and edge effects, as well as localized spin-polarized edge states for specific edge geometries. The inability to produce graphene nanostructures with the needed precision, however, has so far hampered the verification of the predicted electronic properties. Here, we report on the electronic band gap and dispersion of the occupied electronic bands of atomically precise graphene nanoribbons fabricated via on-surface synthesis. Angle-resolved photoelectron spectroscopy and scanning tunneling spectroscopy data from armchair graphene nanoribbons of width N = 7 supported on Au(111) reveal a band gap of 2.3 eV, an effective mass of 0.21 m(0) at the top of the valence band, and an energy-dependent charge carrier velocity reaching 8.2 × 10(5) m/s in the linear part of the valence band. These results are in quantitative agreement with theoretical predictions that include image charge corrections accounting for screening by the metal substrate and confirm the importance of electron-electron interactions in graphene nanoribbons.

  8. Graphene mechanics: II. Atomic stress distribution during indentation until rupture.

    PubMed

    Costescu, Bogdan I; Gräter, Frauke

    2014-06-28

    Previous Atomic Force Microscopy (AFM) experiments found single layers of defect-free graphene to rupture at unexpectedly high loads in the micronewton range. Using molecular dynamics simulations, we modeled an AFM spherical tip pressing on a circular graphene sheet and studied the stress distribution during the indentation process until rupture. We found the graphene rupture force to have no dependency on the sheet size and a very weak dependency on the indenter velocity, allowing a direct comparison to experiment. The deformation showed a non-linear elastic behavior, with a two-dimensional elastic modulus in good agreement with previous experimental and computational studies. In line with theoretical predictions for linearly elastic sheets, rupture forces of non-linearly elastic graphene are proportional to the tip radius. However, as a deviation from the theory, the atomic stress concentrates under the indenter tip more strongly than predicted and causes a high probability of bond breaking only in this area. In turn, stress levels decrease rapidly towards the edge of the sheet, most of which thus only serves the role of mechanical support for the region under the indenter. As a consequence, the high ratio between graphene sheets and sphere radii, hitherto supposed to be necessary for reliable deformation and rupture studies, could be reduced to a factor of only 5-10 without affecting the outcome. Our study suggests time-resolved analysis of forces at the atomic level as a valuable tool to predict and interpret the nano-scale response of stressed materials beyond graphene.

  9. Atomic Structure of Graphene Subnanometer Pores.

    PubMed

    Robertson, Alex W; Lee, Gun-Do; He, Kuang; Gong, Chuncheng; Chen, Qu; Yoon, Euijoon; Kirkland, Angus I; Warner, Jamie H

    2015-12-22

    The atomic structure of subnanometer pores in graphene, of interest due to graphene's potential as a desalination and gas filtration membrane, is demonstrated by atomic resolution aberration corrected transmission electron microscopy. High temperatures of 500 °C and over are used to prevent self-healing of the pores, permitting the successful imaging of open pore geometries consisting of between -4 to -13 atoms, all exhibiting subnanometer diameters. Picometer resolution bond length measurements are used to confirm reconstruction of five-membered ring projections that often decorate the pore perimeter, knowledge which is used to explore the viability of completely self-passivated subnanometer pore structures; bonding configurations where the pore would not require external passivation by, for example, hydrogen to be chemically inert.

  10. Layered graphene structure of a hexagonal carbon

    NASA Astrophysics Data System (ADS)

    Zhang, Bin

    2013-06-01

    Experiments show that there is a novel hexagonal carbon polymorph restricted to the space group of P-62c, but the detailed atomic structure is not determined. Here we set carbon atoms occupying P-62c 4f or P-62c 2c and 2d Wyckoff positions, and calculate the total energy of the different cell structures changing the internal parameter by first-principles calculations, which demonstrates that the stable structures in energy (at local minima) are hexagonal carbon (P-62c 2c and 2d) and hexagonal diamond (P-62c 4f, z=1/16). The calculated bulk modulus 437±16 GPa and interlayer distance 2.062 Å of the layered graphene structure P-62c 2c and 2d are in good agreement with those of the proposed new carbon, which indicates that P-62c 2c and 2d is a possible precursor or intermediate hard phase during the structural transformation of carbon.

  11. Quantum Sticking of Atomic Hydrogen to Graphene

    NASA Astrophysics Data System (ADS)

    Zhang, Yanting; Doherty, Adam; Geragotelis, Andrew; Clougherty, Dennis

    2013-03-01

    We consider the low-energy behavior of the sticking probability of atomic hydrogen to suspended graphene. For energy transfer through the flexural modes of graphene, we find that the inelastic coupling falls in the subOhmic regime. Thus the effects of low-frequency fluctuations of the graphene sheet are crucially important for quantum sticking. We analytically solve for the low-energy asymptotic behavior of the sticking coefficient using a variational mean-field method [D.P. Clougherty and Y. Zhang, Phys. Rev. Lett. 109, 120401 (2012)]. We find that as a result of strong coupling to the low-frequency flexural modes of graphene, a new scaling law results. For suspended graphene at finite temperature, we find that at a critical incident energy, the sticking probability drops discontinuously; below this critical energy, the sticking probability is suppressed by the orthogonality catastrophe. We compare our nonperturbative variational results to those obtained by using Fermi's golden rule. We gratefully acknowledge support by the National Science Foundation under DMR-1062966.

  12. Graphene-coated atomic force microscope tips for reliable nanoscale electrical characterization.

    PubMed

    Lanza, M; Bayerl, A; Gao, T; Porti, M; Nafria, M; Jing, G Y; Zhang, Y F; Liu, Z F; Duan, H L

    2013-03-13

    Graphene single-layer films are grown by chemical vapor deposition and transferred onto commercially available conductive tips for atomic force microscopy. Graphene-coated tips are much more resistant to both high currents and frictions than commercially available, metal-varnished, conductive atomic force microscopy tips, leading to much larger lifetimes and more reliable imaging due to a lower tip-sample interaction. PMID:23280635

  13. Graphene/ferroelectrics/graphene hybrid structure: Asymmetric doping of graphene layers

    SciTech Connect

    Duong, Dinh Loc; Lee, Si Young; Kim, Seong Kyu; Lee, Young Hee

    2015-06-15

    We report graphene/ferroelectric/graphene hybrid structure to demonstrate an asymmetrical doping in two graphene layers, one side with electrons and another side with holes. Two ferroelectrics, a poly(vinylidenefluoride) (PVDF) and a hydrofluorinated graphene, were used to demonstrate the concept with density functional calculations, revealing the Fermi level shift of 0.35 and 0.75 eV, respectively. This concept was confirmed by Raman spectroscopy using graphene/poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE))/graphene hybrid, which can easily form β-phase close to our simulation model. G-band peak position was downshifted for electron doping and upshifted for hole doping. This hybrid structure opens an opportunity to study bilayer graphene system with a controllable thickness for a wide range of high carrier concentration.

  14. Graphene on Ni(111): Electronic Corrugation and Dynamics from Helium Atom Scattering

    PubMed Central

    2015-01-01

    Using helium atom scattering, we have studied the structure and dynamics of a graphene layer prepared in situ on a Ni(111) surface. Graphene/Ni(111) exhibits a helium reflectivity of ∼20% for a thermal helium atom beam and a particularly small surface electron density corrugation ((0.06 ± 0.02) Å peak to peak height). The Debye–Waller attenuation of the elastic diffraction peaks of graphene/Ni(111) and Ni(111) was measured at surface temperatures between 150 and 740 K. A surface Debye temperature of θD = (784 ± 14) K is determined for the graphene/Ni(111) system and θD = (388 ± 7) K for Ni(111), suggesting that the interlayer interaction between graphene and the Ni substrate is intermediary between those for strongly interacting systems like graphene/Ru(0001) and weakly interacting systems like graphene/Pt(111). In addition we present measurements of low frequency surface phonon modes on graphene/Ni(111) where the phonon modes of the Ni(111) substrate can be clearly observed. The similarity of these findings with the graphene/Ru(0001) system indicates that the bonding of graphene to a metal substrate alters the dynamic properties of the graphene surface strongly and is responsible for the high helium reflectivity of these systems. PMID:26617683

  15. Specific heat of twisted bilayer graphene: Engineering phonons by atomic plane rotations

    SciTech Connect

    Nika, Denis L.; Cocemasov, Alexandr I.; Balandin, Alexander A.

    2014-07-21

    We have studied the phonon specific heat in single-layer, bilayer, and twisted bilayer graphene. The calculations were performed using the Born-von Karman model of lattice dynamics for intralayer atomic interactions and spherically symmetric interatomic potential for interlayer interactions. We found that at temperature T < 15 K, specific heat varies with temperature as T{sup n}, where n = 1 for graphene, n = 1.6 for bilayer graphene, and n = 1.3 for the twisted bilayer graphene. The phonon specific heat reveals an intriguing dependence on the twist angle in bilayer graphene, which is particularly pronounced at low temperature. The results suggest a possibility of phonon engineering of thermal properties of layered materials by twisting the atomic planes.

  16. Thermal conductivity of giant mono- to few-layered CVD graphene supported on an organic substrate.

    PubMed

    Liu, Jing; Wang, Tianyu; Xu, Shen; Yuan, Pengyu; Xu, Xu; Wang, Xinwei

    2016-05-21

    The thermal conductivity (k) of supported graphene is a critical property that reflects the graphene-substrate interaction, graphene structure quality, and is needed for thermal design of a graphene device. Yet the related k measurement has never been a trivial work and very few studies are reported to date, only at the μm level. In this work, for the first time, the k of giant chemical vapor decomposition (CVD) graphene supported on poly(methyl methacrylate) (PMMA) is characterized using our transient electro-thermal technique based on a differential concept. Our graphene size is ∼mm, far above the samples studied in the past. This giant graphene measurement eliminates the thermal contact resistance problems and edge phonon scattering encountered in μm-scale graphene k measurement. Such mm-scale measurement is critical for device/system-level thermal design since it reflects the effect of abundant grains in graphene. The k of 1.33-layered, 1.53-layered, 2.74-layered and 5.2-layered supported graphene is measured as 365 W m(-1) K(-1), 359 W m(-1) K(-1), 273 W m(-1) K(-1) and 33.5 W m(-1) K(-1), respectively. These values are significantly lower than the k of supported graphene on SiO2, and are about one order of magnitude lower than the k of suspended graphene. We speculate that the abundant C atoms in the PMMA promote more ready energy and momentum exchange with the supported graphene, and give rise to more phonon scattering than the SiO2 substrate. This leads to a lower k of CVD graphene on PMMA than that on SiO2. We attribute the existence of disorder in the sp(2) domain, graphene oxide (GO) and stratification in the 5.2-layered graphene to its more k reduction. The Raman linewidth (G peak) of the 5.2-layered graphene is also twice larger than that of the other three kinds of graphene, indicating the much more phonon scattering and shorter phonon lifetime in it. Also the electrical conductivity of the 5.2-layered graphene is about one-fifth of that for the

  17. Thermal conductivity of giant mono- to few-layered CVD graphene supported on an organic substrate

    NASA Astrophysics Data System (ADS)

    Liu, Jing; Wang, Tianyu; Xu, Shen; Yuan, Pengyu; Xu, Xu; Wang, Xinwei

    2016-05-01

    The thermal conductivity (k) of supported graphene is a critical property that reflects the graphene-substrate interaction, graphene structure quality, and is needed for thermal design of a graphene device. Yet the related k measurement has never been a trivial work and very few studies are reported to date, only at the μm level. In this work, for the first time, the k of giant chemical vapor decomposition (CVD) graphene supported on poly(methyl methacrylate) (PMMA) is characterized using our transient electro-thermal technique based on a differential concept. Our graphene size is ~mm, far above the samples studied in the past. This giant graphene measurement eliminates the thermal contact resistance problems and edge phonon scattering encountered in μm-scale graphene k measurement. Such mm-scale measurement is critical for device/system-level thermal design since it reflects the effect of abundant grains in graphene. The k of 1.33-layered, 1.53-layered, 2.74-layered and 5.2-layered supported graphene is measured as 365 W m-1 K-1, 359 W m-1 K-1, 273 W m-1 K-1 and 33.5 W m-1 K-1, respectively. These values are significantly lower than the k of supported graphene on SiO2, and are about one order of magnitude lower than the k of suspended graphene. We speculate that the abundant C atoms in the PMMA promote more ready energy and momentum exchange with the supported graphene, and give rise to more phonon scattering than the SiO2 substrate. This leads to a lower k of CVD graphene on PMMA than that on SiO2. We attribute the existence of disorder in the sp2 domain, graphene oxide (GO) and stratification in the 5.2-layered graphene to its more k reduction. The Raman linewidth (G peak) of the 5.2-layered graphene is also twice larger than that of the other three kinds of graphene, indicating the much more phonon scattering and shorter phonon lifetime in it. Also the electrical conductivity of the 5.2-layered graphene is about one-fifth of that for the other three. This

  18. Graphene and graphene-like layered transition metal dichalcogenides in energy conversion and storage.

    PubMed

    Wang, Hua; Feng, Hongbin; Li, Jinghong

    2014-06-12

    Being confronted with the energy crisis and environmental problems, the exploration of clean and renewable energy materials as well as their devices are urgently demanded. Two-dimensional (2D) atomically-thick materials, graphene and grpahene-like layered transition metal dichalcogenides (TMDs), have showed vast potential as novel energy materials due to their unique physicochemical properties. In this Review, we outline the typical application of graphene and grpahene-like TMDs in energy conversion and storage fields, and hope to promote the development of 2D TMDs in this field through the analysis and comparisons with the relatively natural graphene. First, a brief introduction of electronic structures and basic properties of graphene and TMDs are presented. Then, we summarize the exciting progress of these materials made in both energy conversion and storage field including solar cells, electrocatalysis, supercapacitors and lithium ions batteries. Finally, the prospects and further developments in these exciting fields of graphene and graphene-like TMDs materials are also suggested.

  19. Raman Fingerprints of Atomically Precise Graphene Nanoribbons

    PubMed Central

    2016-01-01

    Bottom-up approaches allow the production of ultranarrow and atomically precise graphene nanoribbons (GNRs) with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab initio simulations, we show that GNR width, edge geometry, and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm–1 is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs and differentiates them from other sp2 carbon nanostructures. PMID:26907096

  20. Two-dimensional atomic crystals beyond graphene

    NASA Astrophysics Data System (ADS)

    Kaul, Anupama B.

    2014-06-01

    Carbon-based nanostructures have been the center of intense research and development for more than two decades now. Of these materials, graphene, a two-dimensional (2D) layered material system, has had a significant impact on science and technology over the past decade after monolayers of this material were experimentally isolated in 2004. The recent emergence of other classes of 2D graphene-like layered materials has added yet more exciting dimensions for research in exploring the diverse properties and applications arising from these 2D material systems. For example, hexagonal-BN, a layered material closest in structure to graphene, is an insulator, while NbSe2, a transition metal di-chalcogenide, is metallic and monolayers of other transition metal di-chalcogenides such as MoS2 are direct band-gap semiconductors. The rich spectrum of properties that 2D layered material systems offer can potentially be engineered ondemand, and creates exciting prospects for using such materials in applications ranging from electronics, sensing, photonics, energy harvesting and flexible electronics over the coming years.

  1. Additional waves in the graphene layered medium.

    PubMed

    Chern, Ruey-Lin; Han, Dezhuan; Zhang, Z Q; Chan, C T

    2014-12-29

    We investigate the features of additional waves that arise in the graphene layered medium, within the framework of nonlocal effective medium model. The additional wave is manifest on the biquadratic dispersion relation of the medium and represents as a distinctive nonlocal character at long wavelength. In particular, the reflection and transmission coefficients for the nonlocal medium are underdetermined by Maxwell's boundary conditions. An additional boundary condition based on modal expansions is proposed to derive the generalized Fresnel equations, based on which the additional wave in the graphene layered medium is determined. The additional wave tends to be significant near the effective plasma frequency, near which the graphene plasmons are excited inside the medium. PMID:25607138

  2. Selective exfoliation of single-layer graphene from non-uniform graphene grown on Cu

    NASA Astrophysics Data System (ADS)

    Lim, Jae-Young; Lee, Jae-Hyun; Jang, Hyeon-Sik; Joo, Won-Jae; Hwang, SungWoo; Whang, Dongmok

    2015-11-01

    Graphene growth on a copper surface via metal-catalyzed chemical vapor deposition has several advantages in terms of providing high-quality graphene with the potential for scale-up, but the product is usually inhomogeneous due to the inability to control the graphene layer growth. The non-uniform regions strongly affect the reliability of the graphene in practical electronic applications. Herein, we report a novel graphene transfer method that allows for the selective exfoliation of single-layer graphene from non-uniform graphene grown on a Cu foil. Differences in the interlayer bonding energy are exploited to mechanically separate only the top single-layer graphene and transfer this to an arbitrary substrate. The dry-transferred single-layer graphene showed electrical characteristics that were more uniform than those of graphene transferred using conventional wet-etching transfer steps.

  3. Layer resolved capacitive probing of graphene bilayers

    NASA Astrophysics Data System (ADS)

    Zibrov, Alexander; Parmentier, François; Li, Jia; Wang, Lei; Hunt, Benjamin; Dean, Cory; Hone, James; Taniguchi, Takashi; Watanabe, Kenji; Young, Andrea

    Compared to single layer graphene, graphene bilayers have an additional ``which-layer'' degree of freedom that can be controlled by an external electric field in a dual-gated device geometry. We describe capacitance measurements capable of directly probing this degree of freedom. By performing top gate, bottom gate, and penetration field capacitance measurements, we directly extract layer polarization of both Bernal and twisted bilayers. We will present measurements of hBN encapsulated bilayers at both zero and high magnetic field, focusing on the physics of the highly degenerate zero-energy Landau level in the high magnetic field limit where spin, valley, and layer degeneracy are all lifted by electronic interactions.

  4. Symmetry Breaking in Few Layer Graphene Films

    SciTech Connect

    Bostwick, A.; Ohta, T.; McChesney, J.L.; Emtsev, K.; Seyller,Th.; Horn, K.; Rotenberg, E.

    2007-05-25

    Recently, it was demonstrated that the quasiparticledynamics, the layer-dependent charge and potential, and the c-axisscreening coefficient could be extracted from measurements of thespectral function of few layer graphene films grown epitaxially on SiCusing angle-resolved photoemission spectroscopy (ARPES). In this articlewe review these findings, and present detailed methodology for extractingsuch parameters from ARPES. We also present detailed arguments againstthe possibility of an energy gap at the Dirac crossing ED.

  5. Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Guo, Hongwei; Liu, Yunlong; Xu, Yang; Meng, Nan; Wang, Hongtao; Hasan, Tawfique; Wang, Xinran; Luo, Jikui; Yu, Bin

    2014-09-01

    Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated graphene (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy and strong electrostatic interactions with H2O-based ALD precursors, indicating their potential as the ALD seed layer for dielectric growth on graphene. In graphene-SFG vdW heterostructures, graphene is n-doped after ALD precursor adsorption on the SFG surface caused by vertical intrinsic polarization of SFG. However, graphene-h-BN vdW heterostructures help preserving the intrinsic characteristics of the underlying graphene due to in-plane intrinsic polarization of h-BN. By choosing SFG or BN as the ALD seed layer on the basis of actual device design needs, the graphene vdW heterostructures may find applications in low-dimensional electronics.

  6. Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures.

    PubMed

    Guo, Hongwei; Liu, Yunlong; Xu, Yang; Meng, Nan; Wang, Hongtao; Hasan, Tawfique; Wang, Xinran; Luo, Jikui; Yu, Bin

    2014-09-01

    Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated graphene (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy and strong electrostatic interactions with H2O-based ALD precursors, indicating their potential as the ALD seed layer for dielectric growth on graphene. In graphene-SFG vdW heterostructures, graphene is n-doped after ALD precursor adsorption on the SFG surface caused by vertical intrinsic polarization of SFG. However, graphene-h-BN vdW heterostructures help preserving the intrinsic characteristics of the underlying graphene due to in-plane intrinsic polarization of h-BN. By choosing SFG or BN as the ALD seed layer on the basis of actual device design needs, the graphene vdW heterostructures may find applications in low-dimensional electronics. PMID:25116064

  7. Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures.

    PubMed

    Guo, Hongwei; Liu, Yunlong; Xu, Yang; Meng, Nan; Wang, Hongtao; Hasan, Tawfique; Wang, Xinran; Luo, Jikui; Yu, Bin

    2014-09-01

    Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated graphene (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy and strong electrostatic interactions with H2O-based ALD precursors, indicating their potential as the ALD seed layer for dielectric growth on graphene. In graphene-SFG vdW heterostructures, graphene is n-doped after ALD precursor adsorption on the SFG surface caused by vertical intrinsic polarization of SFG. However, graphene-h-BN vdW heterostructures help preserving the intrinsic characteristics of the underlying graphene due to in-plane intrinsic polarization of h-BN. By choosing SFG or BN as the ALD seed layer on the basis of actual device design needs, the graphene vdW heterostructures may find applications in low-dimensional electronics.

  8. Growth of high quality GaN layer on carbon nanotube-graphene network structure as intermediate layer

    NASA Astrophysics Data System (ADS)

    Seo, Taeo Hoon; Park, Ah Hyun; Park, Sungchan; Kim, Myung Jong; Suh, Eun-Kyung

    2015-03-01

    In general, high-quality GaN layers are synthesized on low-temperature (LT) GaN buffer layer on a single crystal sapphire substrate. However, large differences in fundamental properties such as lattice constants and thermal expansion coefficients between GaN layer and sapphire substrate generate high density of threading dislocation (TD) that leads to deterioration of optical and structural properties. Graphene has been attracting much attention due to its excellent physical properties However, direct epitaxial growth of GaN film onto graphene layer on substrates is not easily accessible due to the lack of chemical reactivity on graphene which consisted of C-C bond of sp2 hexagonally arranged carbon atoms with no dangling bonds. In this work, an intermediate layer for the GaN growth on sapphire substrate was constructed by inserting carbon nanotubes and graphene hybrid structure (CGH) Optical and structural properties of GaN layer grown on CGH were compared with those of GaN layer directly grown on sapphire CNTs act as nucleation sites and play a crucial role in the growth of single crystal high-quality GaN on graphene layer. Also, graphene film acts as a mask for epitaxial lateral overgrowth of GaN layer, which can effectively reduce TD density. A grant from the Korea Institute of Science and Technology (KIST) institutional program.

  9. Graphene coated with controllable N-doped carbon layer by molecular layer deposition as electrode materials for supercapacitors

    NASA Astrophysics Data System (ADS)

    Chen, Yao; Gao, Zhe; Zhang, Bin; Zhao, Shichao; Qin, Yong

    2016-05-01

    In this work, graphene is coated with nitrogen-doped carbon layer, which is produced by a carbonization process of aromatic polyimide (PI) films deposited on the surfaces of graphene by molecular layer deposition (MLD). The utilization of MLD not only allows uniform coating of PI layers on the surfaces of pristine graphene without any surface treatment, but also enables homogenous dispersion of doped nitrogen atoms in the carbonized products. The as-prepared N-doped carbon layer coated graphene (NC-G) exhibited remarkable capacitance performance as electrode materials for supercapacitor, showing a high specific capacitance of 290.2 F g-1 at current density of 1 A g-1 in 6 M KOH aqueous electrolyte, meanwhile maintaining good rate performance and stable cycle capability. The NC-G synthesized by this way represents an alternative promising candidate as electrode material for supercapacitors.

  10. Reversible Loss of Bernal Stacking during the Deformation of Few-Layer Graphene in Nanocomposites

    PubMed Central

    2013-01-01

    The deformation of nanocomposites containing graphene flakes with different numbers of layers has been investigated with the use of Raman spectroscopy. It has been found that there is a shift of the 2D band to lower wavenumber and that the rate of band shift per unit strain tends to decrease as the number of graphene layers increases. It has been demonstrated that band broadening takes place during tensile deformation for mono- and bilayer graphene but that band narrowing occurs when the number of graphene layers is more than two. It is also found that the characteristic asymmetric shape of the 2D Raman band for the graphene with three or more layers changes to a symmetrical shape above about 0.4% strain and that it reverts to an asymmetric shape on unloading. This change in Raman band shape and width has been interpreted as being due to a reversible loss of Bernal stacking in the few-layer graphene during deformation. It has been shown that the elastic strain energy released from the unloading of the inner graphene layers in the few-layer material (∼0.2 meV/atom) is similar to the accepted value of the stacking fault energies of graphite and few layer graphene. It is further shown that this loss of Bernal stacking can be accommodated by the formation of arrays of partial dislocations and stacking faults on the basal plane. The effect of the reversible loss of Bernal stacking upon the electronic structure of few-layer graphene and the possibility of using it to modify the electronic structure of few-layer graphene are discussed. PMID:23899378

  11. Reversible loss of Bernal stacking during the deformation of few-layer graphene in nanocomposites.

    PubMed

    Gong, Lei; Young, Robert J; Kinloch, Ian A; Haigh, Sarah J; Warner, Jamie H; Hinks, Jonathan A; Xu, Ziwei; Li, Li; Ding, Feng; Riaz, Ibtsam; Jalil, Rashid; Novoselov, Kostya S

    2013-08-27

    The deformation of nanocomposites containing graphene flakes with different numbers of layers has been investigated with the use of Raman spectroscopy. It has been found that there is a shift of the 2D band to lower wavenumber and that the rate of band shift per unit strain tends to decrease as the number of graphene layers increases. It has been demonstrated that band broadening takes place during tensile deformation for mono- and bilayer graphene but that band narrowing occurs when the number of graphene layers is more than two. It is also found that the characteristic asymmetric shape of the 2D Raman band for the graphene with three or more layers changes to a symmetrical shape above about 0.4% strain and that it reverts to an asymmetric shape on unloading. This change in Raman band shape and width has been interpreted as being due to a reversible loss of Bernal stacking in the few-layer graphene during deformation. It has been shown that the elastic strain energy released from the unloading of the inner graphene layers in the few-layer material (~0.2 meV/atom) is similar to the accepted value of the stacking fault energies of graphite and few layer graphene. It is further shown that this loss of Bernal stacking can be accommodated by the formation of arrays of partial dislocations and stacking faults on the basal plane. The effect of the reversible loss of Bernal stacking upon the electronic structure of few-layer graphene and the possibility of using it to modify the electronic structure of few-layer graphene are discussed. PMID:23899378

  12. Direct Synthesis of Few-Layer Graphene on NaCl Crystals.

    PubMed

    Shi, Liurong; Chen, Ke; Du, Ran; Bachmatiuk, Alicja; Rümmeli, Mark Hermann; Priydarshi, Manish Kumar; Zhang, Yanfeng; Manivannan, Ayyakkannu; Liu, Zhongfan

    2015-12-16

    Chemical vapor deposition is used to synthesize few-layer graphene on micro crystalline sodium chloride (NaCl) powder. The water-soluble nature of NaCl makes it convenient to produce free standing graphene layers via a facile and low-cost approach. Unlike traditional metal-catalyzed or oxygen-aided growth, the micron-size NaCl crystal planes play an important role in the nucleation and growth of few-layer graphene. Moreover, the possibility of synthesizing cuboidal graphene is also demonstrated in the present approach for the first time. Raman spectroscopy, optical microscopy, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy are used to evaluate the quality and structure of the few-layer graphene along with cuboidal graphene obtained in this process. The few-layer graphene synthesized using the present method has an adsorption ability for anionic and cationic dye molecules in water. The present synthesis method may pave a facile way for manufacturing few-layer graphene on a large scale. PMID:26524105

  13. Aqueous proton transfer across single-layer graphene

    DOE PAGES

    Achtyl, Jennifer L.; Unocic, Raymond R.; Xu, Lijun; Cai, Yu; Raju, Muralikrishna; Zhang, Weiwei; Sacci, Robert L.; Vlassiouk, Ivan V.; Fulvio, Pasquale F.; Ganesh, Panchapakesan; et al

    2015-03-17

    Proton transfer across single-layer graphene proceeds with large computed energy barriers and is thought to be unfavourable at room temperature unless nanoscale holes or dopants are introduced, or a potential bias is applied. Here we subject single-layer graphene supported on fused ​silica to cycles of high and low pH, and show that protons transfer reversibly from the aqueous phase through the graphene to the other side where they undergo acid–base chemistry with the silica hydroxyl groups. After ruling out diffusion through macroscopic pinholes, the protons are found to transfer through rare, naturally occurring atomic defects. Computer simulations reveal low energymore » barriers of 0.61–0.75 eV for aqueous proton transfer across hydroxyl-terminated atomic defects that participate in a Grotthuss-type relay, while ​pyrylium-like ether terminations shut down proton exchange. In conclusion, unfavourable energy barriers to helium and ​hydrogen transfer indicate the process is selective for aqueous protons.« less

  14. Aqueous proton transfer across single-layer graphene

    PubMed Central

    Achtyl, Jennifer L.; Unocic, Raymond R.; Xu, Lijun; Cai, Yu; Raju, Muralikrishna; Zhang, Weiwei; Sacci, Robert L.; Vlassiouk, Ivan V.; Fulvio, Pasquale F.; Ganesh, Panchapakesan; Wesolowski, David J.; Dai, Sheng; van Duin, Adri C. T.; Neurock, Matthew; Geiger, Franz M.

    2015-01-01

    Proton transfer across single-layer graphene proceeds with large computed energy barriers and is therefore thought to be unfavourable at room temperature unless nanoscale holes or dopants are introduced, or a potential bias is applied. Here we subject single-layer graphene supported on fused silica to cycles of high and low pH, and show that protons transfer reversibly from the aqueous phase through the graphene to the other side where they undergo acid–base chemistry with the silica hydroxyl groups. After ruling out diffusion through macroscopic pinholes, the protons are found to transfer through rare, naturally occurring atomic defects. Computer simulations reveal low energy barriers of 0.61–0.75 eV for aqueous proton transfer across hydroxyl-terminated atomic defects that participate in a Grotthuss-type relay, while pyrylium-like ether terminations shut down proton exchange. Unfavourable energy barriers to helium and hydrogen transfer indicate the process is selective for aqueous protons. PMID:25781149

  15. Aqueous proton transfer across single-layer graphene

    SciTech Connect

    Achtyl, Jennifer L.; Unocic, Raymond R.; Xu, Lijun; Cai, Yu; Raju, Muralikrishna; Zhang, Weiwei; Sacci, Robert L.; Vlassiouk, Ivan V.; Fulvio, Pasquale F.; Ganesh, Panchapakesan; Wesolowski, David J.; Dai, Sheng; van Duin, Adri C. T.; Neurock, Matthew; Geiger, Franz M.

    2015-03-17

    Proton transfer across single-layer graphene proceeds with large computed energy barriers and is thought to be unfavourable at room temperature unless nanoscale holes or dopants are introduced, or a potential bias is applied. Here we subject single-layer graphene supported on fused ​silica to cycles of high and low pH, and show that protons transfer reversibly from the aqueous phase through the graphene to the other side where they undergo acid–base chemistry with the silica hydroxyl groups. After ruling out diffusion through macroscopic pinholes, the protons are found to transfer through rare, naturally occurring atomic defects. Computer simulations reveal low energy barriers of 0.61–0.75 eV for aqueous proton transfer across hydroxyl-terminated atomic defects that participate in a Grotthuss-type relay, while ​pyrylium-like ether terminations shut down proton exchange. In conclusion, unfavourable energy barriers to helium and ​hydrogen transfer indicate the process is selective for aqueous protons.

  16. Aqueous proton transfer across single-layer graphene

    NASA Astrophysics Data System (ADS)

    Achtyl, Jennifer L.; Unocic, Raymond R.; Xu, Lijun; Cai, Yu; Raju, Muralikrishna; Zhang, Weiwei; Sacci, Robert L.; Vlassiouk, Ivan V.; Fulvio, Pasquale F.; Ganesh, Panchapakesan; Wesolowski, David J.; Dai, Sheng; van Duin, Adri C. T.; Neurock, Matthew; Geiger, Franz M.

    2015-03-01

    Proton transfer across single-layer graphene proceeds with large computed energy barriers and is therefore thought to be unfavourable at room temperature unless nanoscale holes or dopants are introduced, or a potential bias is applied. Here we subject single-layer graphene supported on fused silica to cycles of high and low pH, and show that protons transfer reversibly from the aqueous phase through the graphene to the other side where they undergo acid-base chemistry with the silica hydroxyl groups. After ruling out diffusion through macroscopic pinholes, the protons are found to transfer through rare, naturally occurring atomic defects. Computer simulations reveal low energy barriers of 0.61-0.75 eV for aqueous proton transfer across hydroxyl-terminated atomic defects that participate in a Grotthuss-type relay, while pyrylium-like ether terminations shut down proton exchange. Unfavourable energy barriers to helium and hydrogen transfer indicate the process is selective for aqueous protons.

  17. Selective growth of graphene in layer-by-layer via chemical vapor deposition.

    PubMed

    Park, Jaehyun; An, Hyosub; Choi, Dong-Chul; Hussain, Sajjad; Song, Wooseok; An, Ki-Seok; Lee, Won-Jun; Lee, Naesung; Lee, Wan-Gyu; Jung, Jongwan

    2016-08-14

    Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene on a specific position. The key idea is to deposit a thin Cu layer (∼40 nm thick) on pre-grown monolayer graphene and to apply additional growth. The thin Cu atop the graphene/Cu substrate acts as a catalyst to decompose methane (CH4) gas during the additional growth. The adlayer is grown selectively on the pre-grown graphene, and the thin Cu is removed through evaporation during CVD, eventually forming large-area and uniform double layer graphene. With this technology, highly uniform graphene films with precise thicknesses of 1 to 5 layers and graphene check patterns with 1 to 3 layers were successfully demonstrated. This method provides precise LBL growth for a uniform graphene film and a technique for the design of new graphene devices. PMID:27436358

  18. Fabricating Large-Area Sheets of Single-Layer Graphene by CVD

    NASA Technical Reports Server (NTRS)

    Bronikowski, Michael; Manohara, Harish

    2008-01-01

    This innovation consists of a set of methodologies for preparing large area (greater than 1 cm(exp 2)) domains of single-atomic-layer graphite, also called graphene, in single (two-dimensional) crystal form. To fabricate a single graphene layer using chemical vapor deposition (CVD), the process begins with an atomically flat surface of an appropriate substrate and an appropriate precursor molecule containing carbon atoms attached to substituent atoms or groups. These molecules will be brought into contact with the substrate surface by being flowed over, or sprayed onto, the substrate, under CVD conditions of low pressure and elevated temperature. Upon contact with the surface, the precursor molecules will decompose. The substituent groups detach from the carbon atoms and form gas-phase species, leaving the unfunctionalized carbon atoms attached to the substrate surface. These carbon atoms will diffuse upon this surface and encounter and bond to other carbon atoms. If conditions are chosen carefully, the surface carbon atoms will arrange to form the lowest energy single-layer structure available, which is the graphene lattice that is sought. Another method for creating the graphene lattice includes metal-catalyzed CVD, in which the decomposition of the precursor molecules is initiated by the catalytic action of a catalytic metal upon the substrate surface. Another type of metal-catalyzed CVD has the entire substrate composed of catalytic metal, or other material, either as a bulk crystal or as a think layer of catalyst deposited upon another surface. In this case, the precursor molecules decompose directly upon contact with the substrate, releasing their atoms and forming the graphene sheet. Atomic layer deposition (ALD) can also be used. In this method, a substrate surface at low temperature is covered with exactly one monolayer of precursor molecules (which may be of more than one type). This is heated up so that the precursor molecules decompose and form one

  19. Synthesis of layer-tunable graphene: A combined kinetic implantation and thermal ejection approach

    SciTech Connect

    Wang, Gang; Zhang, Miao; Liu, Su; Xie, Xiaoming; Ding, Guqiao; Wang, Yongqiang; Chu, Paul K.; Gao, Heng; Ren, Wei; Yuan, Qinghong; Zhang, Peihong; Wang, Xi; Di, Zengfeng

    2015-05-04

    Layer-tunable graphene has attracted broad interest for its potentials in nanoelectronics applications. However, synthesis of layer-tunable graphene by using traditional chemical vapor deposition (CVD) method still remains a great challenge due to the complex experimental parameters and the carbon precipitation process. Herein, by performing ion implantation into a Ni/Cu bilayer substrate, the number of graphene layers, especially single or double layer, can be controlled precisely by adjusting the carbon ion implant fluence. The growth mechanism of the layer-tunable graphene is revealed by monitoring the growth process is observed that the entire implanted carbon atoms can be expelled towards the substrate surface and thus graphene with designed layer number can be obtained. Such a growth mechanism is further confirmed by theoretical calculations. The proposed approach for the synthesis of layer-tunable graphene offers more flexibility in the experimental conditions. Being a core technology in microelectronics processing, ion implantation can be readily implemented in production lines and is expected to expedite the application of graphene to nanoelectronics.

  20. Synthesis of layer-tunable graphene: A combined kinetic implantation and thermal ejection approach

    DOE PAGES

    Wang, Gang; Zhang, Miao; Liu, Su; Xie, Xiaoming; Ding, Guqiao; Wang, Yongqiang; Chu, Paul K.; Gao, Heng; Ren, Wei; Yuan, Qinghong; et al

    2015-05-04

    Layer-tunable graphene has attracted broad interest for its potentials in nanoelectronics applications. However, synthesis of layer-tunable graphene by using traditional chemical vapor deposition (CVD) method still remains a great challenge due to the complex experimental parameters and the carbon precipitation process. Herein, by performing ion implantation into a Ni/Cu bilayer substrate, the number of graphene layers, especially single or double layer, can be controlled precisely by adjusting the carbon ion implant fluence. The growth mechanism of the layer-tunable graphene is revealed by monitoring the growth process is observed that the entire implanted carbon atoms can be expelled towards the substratemore » surface and thus graphene with designed layer number can be obtained. Such a growth mechanism is further confirmed by theoretical calculations. The proposed approach for the synthesis of layer-tunable graphene offers more flexibility in the experimental conditions. Being a core technology in microelectronics processing, ion implantation can be readily implemented in production lines and is expected to expedite the application of graphene to nanoelectronics.« less

  1. Resistance and rupture analysis of single- and few-layer graphene nanosheets impacted by various projectiles

    NASA Astrophysics Data System (ADS)

    Sadeghzadeh, Sadegh; Liu, Ling

    2016-09-01

    In this paper, a quasi-classical model for the collision of various nanoparticles with single- and few-layer graphene nanosheets was introduced as a multi-scale approach that couples non-equilibrium molecular dynamics with the Finite Element Method. As a resistance criterion, it was observed that the coefficient of restitution and the induced stresses depend on the impact velocity of projectile. These parameters were evaluated computationally, and it was revealed that certain resulting behaviors differ from behaviors at the macro scale. By obtaining an out-of-plane yield stress limit of 1.0 TPa for graphene, the stress analysis of single- and multi-layer graphene sheets revealed that the limit projectile velocity needed for the yielding of graphene sheets increases with the increase in the number of layers. For aluminum nanoparticles, this increase is almost linear, and for other metals, it slightly deviates from the linear trend. It was also observed that the graphene sheets have a different rupture form when impacted by gaseous molecules than by metal particles. Considering the very high momentum of gas molecules and their shock-like behavior during high-speed collisions with a graphene sheet, pores with a size of one carbon atom can be created in graphene sheets. Since a single-layer graphene sheet can withstand a projectile which is 3.64 times larger than a projectile impacting a 20-layer graphene sheet, spaced graphene sheets seem to be more effective in absorbing the impact energy of projectiles than conventional few-layer graphene sheets.

  2. Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

    SciTech Connect

    Papon, Remi; Sharma, Subash; Shinde, Sachin M.; Vishwakarma, Riteshkumar; Tanemura, Masaki; Kalita, Golap

    2014-09-29

    Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.

  3. Benchmarking the penetration-resistance efficiency of multilayer graphene sheets due to spacing the graphene layers

    NASA Astrophysics Data System (ADS)

    Sadeghzadeh, S.

    2016-07-01

    In this paper, the penetration-resistance efficiency of single-layer and multilayer graphene sheets has been investigated by means of the multiscale approach. The employed multiscale approach has been implemented by establishing a direct correlation between the finite element method and the molecular dynamics approach and validated by comparing its results with those of the existing experimental works. Since by using numerous techniques, a new class of graphene sheets can be fabricated in which the graphene layers are spaced farther apart (more than the usual distance between layers), this paper has concentrated on the optimal spacing between graphene layers with the goal of improving the impact properties of graphene sheets as important candidates for novel impact-resistant panels. For this purpose, the relative protection (protection with respect to weight) values of graphene sheets were obtained, and it was observed that the relative protection of a single-layer graphene sheet is about 3.64 times that of a 20-layer graphene sheet. This study also showed that a spaced multilayer graphene sheet, with its inter-layer distance being 20 times the usual spacing between ordinary graphene layers, has an impact resistance which is about 20 % higher than that of an ordinary 20-layer graphene sheet. The findings of this paper can be appropriately used in the design and fabrication of future-generation impact-resistant protective panels.

  4. Growth of bi- and tri-layered graphene on silicon carbide substrate via molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Min, Tjun Kit; Lim, Thong Leng; Yoon, Tiem Leong

    2015-04-01

    Molecular dynamics (MD) simulation with simulated annealing method is used to study the growth process of bi- and tri-layered graphene on a 6H-SiC (0001) substrate via molecular dynamics simulation. Tersoff-Albe-Erhart (TEA) potential is used to describe the inter-atomic interactions among the atoms in the system. The formation temperature, averaged carbon-carbon bond length, pair correlation function, binding energy and the distance between the graphene formed and the SiC substrate are quantified. The growth mechanism, graphitization of graphene on the SiC substrate and characteristics of the surface morphology of the graphene sheet obtained in our MD simulation compare well to that observed in epitaxially grown graphene experiments and other simulation works.

  5. Growth of bi- and tri-layered graphene on silicon carbide substrate via molecular dynamics simulation

    SciTech Connect

    Min, Tjun Kit; Yoon, Tiem Leong; Lim, Thong Leng

    2015-04-24

    Molecular dynamics (MD) simulation with simulated annealing method is used to study the growth process of bi- and tri-layered graphene on a 6H-SiC (0001) substrate via molecular dynamics simulation. Tersoff-Albe-Erhart (TEA) potential is used to describe the inter-atomic interactions among the atoms in the system. The formation temperature, averaged carbon-carbon bond length, pair correlation function, binding energy and the distance between the graphene formed and the SiC substrate are quantified. The growth mechanism, graphitization of graphene on the SiC substrate and characteristics of the surface morphology of the graphene sheet obtained in our MD simulation compare well to that observed in epitaxially grown graphene experiments and other simulation works.

  6. Synthesis of few layer graphene by direct exfoliation of graphite and a Raman spectroscopic study

    NASA Astrophysics Data System (ADS)

    Gayathri, S.; Jayabal, P.; Kottaisamy, M.; Ramakrishnan, V.

    2014-02-01

    The exfoliation of graphene from pristine graphite in a liquid phase was achieved successfully via sonication followed by centrifugation method. Ultraviolet-visible (UV-vis) spectra of the obtained graphene dispersions at different exfoliation time indicated that the concentration of graphene dispersion increased markedly with increasing exfoliation time. The sheet-like morphology of the exfoliated graphene was revealed by Scanning Electron Microscopy (SEM) image. Further, the morphological change in different exfoliation time was investigated by Atomic Force Microscopy (AFM). A complete structural and defect characterization was probed using micro-Raman spectroscopic technique. The shape and position of the 2D band of Raman spectra revealed the formation of bilayer to few layer graphene. Also, Raman mapping confirmed the presence of uniformly distributed bilayer graphene sheets on the substrate.

  7. Surface doping of nitrogen atoms on graphene via molecular precursor

    SciTech Connect

    Hong, Guo; Wu, Qi-Hui; Ren, Jianguo; Xu, Tingting; Wang, Chundong; Zhang, Wenjun; Lee, Shuit-Tong

    2013-02-04

    Surface doping can be a powerful way to modify the electronic properties of graphene with the unique potential to retain the excellent pristine properties of graphene. Here, we report an atomic surface doping method for graphene via dissociation of adsorbed precursor molecules of tetrafluorotetracyanoquinodimethane (F{sub 4}-TCNQ) induced by hydrogen plasma treatment. Significantly, the location of the dopant N atoms can be pre-determined by the location and orientation of the F{sub 4}-TCNQ molecule precursor on graphene, leading in principle to site-selective doping. Furthermore, the molecular precursor is stable under ambient conditions, satisfying an important consideration for patterning processes.

  8. Optical and Electrical Characteristics of Graphene Double Layer Formed by a Double Transfer of Graphene Single Layers.

    PubMed

    Kim, Young Jun; Bae, Gi Yoon; Chun, Sungwoo; Park, Wanjun

    2016-03-01

    We demonstrate formation of double layer graphene by means of a double transfer using two single graphene layers grown by a chemical vapor deposition method. It is observed that shiftiness and broadness in the double-resonance of Raman scattering are much weaker than those of bilayer graphene formed naturally. Transport characteristics examined from transmission line measurements and field effect transistors show the similar behavior with those of single layer graphene. It indicates that interlayer separation, in electrical view, is large enough to avoid correlation between layers for the double layer structure. It is also observed from a transistor with the double layer graphene that molecules adsorpted on two inner graphene surfaces in the double layered structure are isolated and conserved from ambient environment. PMID:27455706

  9. Optical and Electrical Characteristics of Graphene Double Layer Formed by a Double Transfer of Graphene Single Layers.

    PubMed

    Kim, Young Jun; Bae, Gi Yoon; Chun, Sungwoo; Park, Wanjun

    2016-03-01

    We demonstrate formation of double layer graphene by means of a double transfer using two single graphene layers grown by a chemical vapor deposition method. It is observed that shiftiness and broadness in the double-resonance of Raman scattering are much weaker than those of bilayer graphene formed naturally. Transport characteristics examined from transmission line measurements and field effect transistors show the similar behavior with those of single layer graphene. It indicates that interlayer separation, in electrical view, is large enough to avoid correlation between layers for the double layer structure. It is also observed from a transistor with the double layer graphene that molecules adsorpted on two inner graphene surfaces in the double layered structure are isolated and conserved from ambient environment.

  10. Adsorption configurations of two nitrogen atoms on graphene

    SciTech Connect

    Rani, Babita; Jindal, V. K.; Dharamvir, Keya

    2014-04-24

    We present calculations for different possible configurations of two nitrogen adatoms on graphene using the code VASP, based on Density Functional Theory (DFT). Two N atoms adsorbed on the graphene sheet can share a bond in two ways. They take positions either just above two adjacent carbon atoms or they form a bridge across opposite bonds of a hexagon in the graphene sheet. Both these configurations result into structural distortion of the sheet. Another stable configuration involving two N atoms consists of an N{sub 2} molecule which is physisorbed at a distance 3.69 Å on the graphene sheet. Two N atoms can also be adsorbed on alternate bridge sites of neighbouring hexagons of graphene. This configuration again leads to distortion of the sheet in perpendicular direction.

  11. Improving the electrical properties of graphene layers by chemical doping

    NASA Astrophysics Data System (ADS)

    Farooq Khan, Muhammad; Zahir Iqbal, Muhammad; Waqas Iqbal, Muhammad; Eom, Jonghwa

    2014-10-01

    Although the electronic properties of graphene layers can be modulated by various doping techniques, most of doping methods cost degradation of structural uniqueness or electrical mobility. It is matter of huge concern to develop a technique to improve the electrical properties of graphene while sustaining its superior properties. Here, we report the modification of electrical properties of single- bi- and trilayer graphene by chemical reaction with potassium nitrate (KNO3) solution. Raman spectroscopy and electrical transport measurements showed the n-doping effect of graphene by KNO3. The effect was most dominant in single layer graphene, and the mobility of single layer graphene was improved by the factor of more than 3. The chemical doping by using KNO3 provides a facile approach to improve the electrical properties of graphene layers sustaining their unique characteristics.

  12. Twisted bi-layer graphene: microscopic rainbows.

    PubMed

    Campos-Delgado, J; Algara-Siller, G; Santos, C N; Kaiser, U; Raskin, J-P

    2013-10-11

    Blue, pink, and yellow colorations appear from twisted bi-layer graphene (tBLG) when transferred to a SiO2 /Si substrate (SiO2 = 100 nm-thick). Raman and electron microscope studies reveal that these colorations appear for twist angles in the 9-15° range. Optical contrast simulations confirm that the observed colorations are related to the angle-dependent electronic properties of tBLG combined with the reflection that results from the layered structure tBLG/100 nm-thick SiO2 /Si. PMID:23606323

  13. Exposure of epitaxial graphene on SiC(0001) to atomic hydrogen.

    PubMed

    Guisinger, Nathan P; Rutter, Gregory M; Crain, Jason N; First, Phillip N; Stroscio, Joseph A

    2009-04-01

    Graphene films on SiC exhibit coherent transport properties that suggest the potential for novel carbon-based nanoelectronics applications. Recent studies suggest that the role of the interface between single layer graphene and silicon-terminated SiC can strongly influence the electronic properties of the graphene overlayer. In this study, we have exposed the graphitized SiC to atomic hydrogen in an effort to passivate dangling bonds at the interface, while investigating the results utilizing room temperature scanning tunneling microscopy.

  14. Atomic insight into copper nanostructures nucleation on bending graphene.

    PubMed

    He, Yezeng; Li, Hui; Li, Yunfang; Zhang, Kun; Jiang, Yanyan; Bian, Xiufang

    2013-06-21

    Some findings in heterogeneous nucleation that the structural features of a growing crystal are usually inherited from the heterogeneous nucleus, although attracting more and more attention, are not yet well understood. Here we report numerical simulations of copper nucleation on bending graphene (BG) to explore the microscopic details of how the curved surface influences the freezing structure of the liquid metal. The simulation result clearly shows that copper atoms become layered at the solid-liquid interface in a "C"-shaped pattern resembling the BG. This kind of shape control decays with increasing distance from the wall and the outmost layers transform into twin crystal composed of two fcc wedges. It is found that the final structures have striking correlations with the curvature radius, central angle and arc length of the BG. Our study would provide an opportunity for comprehensive and satisfactory understanding of the heterogeneous nucleation on curved surfaces.

  15. Water desalination using nanoporous single-layer graphene.

    PubMed

    Surwade, Sumedh P; Smirnov, Sergei N; Vlassiouk, Ivan V; Unocic, Raymond R; Veith, Gabriel M; Dai, Sheng; Mahurin, Shannon M

    2015-05-01

    By creating nanoscale pores in a layer of graphene, it could be used as an effective separation membrane due to its chemical and mechanical stability, its flexibility and, most importantly, its one-atom thickness. Theoretical studies have indicated that the performance of such membranes should be superior to state-of-the-art polymer-based filtration membranes, and experimental studies have recently begun to explore their potential. Here, we show that single-layer porous graphene can be used as a desalination membrane. Nanometre-sized pores are created in a graphene monolayer using an oxygen plasma etching process, which allows the size of the pores to be tuned. The resulting membranes exhibit a salt rejection rate of nearly 100% and rapid water transport. In particular, water fluxes of up to 10(6) g m(-2) s(-1) at 40 °C were measured using pressure difference as a driving force, while water fluxes measured using osmotic pressure as a driving force did not exceed 70 g m(-2) s(-1) atm(-1).

  16. Water desalination using nanoporous single-layer graphene

    NASA Astrophysics Data System (ADS)

    Surwade, Sumedh P.; Smirnov, Sergei N.; Vlassiouk, Ivan V.; Unocic, Raymond R.; Veith, Gabriel M.; Dai, Sheng; Mahurin, Shannon M.

    2015-05-01

    By creating nanoscale pores in a layer of graphene, it could be used as an effective separation membrane due to its chemical and mechanical stability, its flexibility and, most importantly, its one-atom thickness. Theoretical studies have indicated that the performance of such membranes should be superior to state-of-the-art polymer-based filtration membranes, and experimental studies have recently begun to explore their potential. Here, we show that single-layer porous graphene can be used as a desalination membrane. Nanometre-sized pores are created in a graphene monolayer using an oxygen plasma etching process, which allows the size of the pores to be tuned. The resulting membranes exhibit a salt rejection rate of nearly 100% and rapid water transport. In particular, water fluxes of up to 106 g m-2 s-1 at 40 °C were measured using pressure difference as a driving force, while water fluxes measured using osmotic pressure as a driving force did not exceed 70 g m-2 s-1 atm-1.

  17. Characterization of few-layered graphene grown by carbon implantation

    SciTech Connect

    Lee, Kin Kiong; McCallum, Jeffrey C.; Jamieson, David N.

    2014-02-21

    Graphene is considered to be a very promising material for applications in nanotechnology. The properties of graphene are strongly dependent on defects that occur during growth and processing. These defects can be either detrimental or beneficial to device performance depending on defect type, location and device application. Here we present experimental results on formation of few-layered graphene by carbon ion implantation into nickel films and characteristics of graphene devices formed by graphene transfer and lithographic patterning. Micro-Raman spectroscopy was used to determine the number of graphene layers formed and identify defects arising from the device processing. The graphene films were cleaned by annealing in vacuum. Transport properties of cleaned graphene films were investigated by fabrication of back-gated field-effect transistors, which exhibited high hole and electron mobility of 1935 and 1905 cm2/Vs, respectively.

  18. Synthesis of few-layered graphene by H{sub 2}O{sub 2} plasma etching of graphite

    SciTech Connect

    Zhao Guixia; Shao Dadong; Chen Changlun; Wang Xiangke

    2011-05-02

    Herein, we reported an approach to synthesize few-layered graphene by etching of the graphite using H{sub 2}O{sub 2} plasma technique. The synthesized few-layered graphene was characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS). The analysis showed that few-layered graphene was formed in high quality level. The XPS analysis suggested that H{sub 2}O{sub 2} plasma etching of graphite could oxidize graphene and generated -C-OH and >C=O groups on the graphene surfaces. The H{sub 2}O{sub 2} plasma technique is an easy and environmental friendly method to synthesize few-layered graphene from the graphite.

  19. Designed nitrogen doping of few-layer graphene functionalized by selective oxygenic groups

    PubMed Central

    2014-01-01

    Few-layer nitrogen doped graphene was synthesized originating from graphene oxide functionalized by selective oxygenic functional groups (hydroxyl, carbonyl, carboxyl etc.) under hydrothermal conditions, respectively. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) observation evidenced few-layer feature of the graphene oxide. X-ray diffraction (XRD) pattern confirmed phase structure of the graphene oxide and reduced graphene oxide. Nitrogen doping content and bonding configuration of the graphene was determined by X-ray photoelectron spectroscopy (XPS), which indicated that different oxygenic functional groups were evidently different in affecting the nitrogen doping process. Compared with other oxygenic groups, carboxyl group played a crucial role in the initial stage of nitrogen doping while hydroxyls exhibited more evident contribution to the doping process in the late stage of the reaction. Formation of graphitic-like nitrogen species was controlled by a synergistic effect of the involved oxygenic groups (e.g., -COOH, -OH, C-O-C, etc.). The doping mechanism of nitrogen in the graphene was scrutinized. The research in this work may not only contribute to the fundamental understandings of nitrogen doping within graphene but promote the development of producing novel graphene-based devices with designed surface functionalization. PMID:25520594

  20. Atomic level spatial variations of energy states along graphene edges.

    PubMed

    Warner, Jamie H; Lin, Yung-Chang; He, Kuang; Koshino, Masanori; Suenaga, Kazu

    2014-11-12

    The local atomic bonding of carbon atoms around the edge of graphene is examined by aberration-corrected scanning transmission electron microscopy (STEM) combined with electron energy loss spectroscopy (EELS). High-resolution 2D maps of the EELS combined with atomic resolution annular dark field STEM images enables correlations between the carbon K-edge EELS and the atomic structure. We show that energy states of graphene edges vary across individual atoms along the edge according to their specific C-C bonding, as well as perpendicular to the edge. Unique spectroscopic peaks from the EELS are assigned to specific C atoms, which enables unambiguous spectroscopic fingerprint identification for the atomic structure of graphene edges with unprecedented detail.

  1. Substrate-induced magnetism in epitaxial graphene buffer layers.

    PubMed

    Ramasubramaniam, A; Medhekar, N V; Shenoy, V B

    2009-07-01

    Magnetism in graphene is of fundamental as well as technological interest, with potential applications in molecular magnets and spintronic devices. While defects and/or adsorbates in freestanding graphene nanoribbons and graphene sheets have been shown to cause itinerant magnetism, controlling the density and distribution of defects and adsorbates is in general difficult. We show from first principles calculations that graphene buffer layers on SiC(0001) can also show intrinsic magnetism. The formation of graphene-substrate chemical bonds disrupts the graphene pi-bonds and causes localization of graphene states near the Fermi level. Exchange interactions between these states lead to itinerant magnetism in the graphene buffer layer. We demonstrate the occurrence of magnetism in graphene buffer layers on both bulk-terminated as well as more realistic adatom-terminated SiC(0001) surfaces. Our calculations show that adatom density has a profound effect on the spin distribution in the graphene buffer layer, thereby providing a means of engineering magnetism in epitaxial graphene.

  2. Electronic properties of graphene encapsulated with different two-dimensional atomic crystals.

    PubMed

    Kretinin, A V; Cao, Y; Tu, J S; Yu, G L; Jalil, R; Novoselov, K S; Haigh, S J; Gholinia, A; Mishchenko, A; Lozada, M; Georgiou, T; Woods, C R; Withers, F; Blake, P; Eda, G; Wirsig, A; Hucho, C; Watanabe, K; Taniguchi, T; Geim, A K; Gorbachev, R V

    2014-06-11

    Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulfides and hBN are found to exhibit consistently high carrier mobilities of about 60 000 cm(2) V(-1) s(-1). In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide, and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ∼1000 cm(2) V(-1) s(-1). We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN, and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.

  3. Delaminated graphene at silicon carbide facets: atomic scale imaging and spectroscopy.

    PubMed

    Nicotra, Giuseppe; Ramasse, Quentin M; Deretzis, Ioannis; La Magna, Antonino; Spinella, Corrado; Giannazzo, Filippo

    2013-04-23

    Atomic-resolution structural and spectroscopic characterization techniques (scanning transmission electron microscopy and electron energy loss spectroscopy) are combined with nanoscale electrical measurements (conductive atomic force microscopy) to study at the atomic scale the properties of graphene grown epitaxially through the controlled graphitization of a hexagonal SiC(0001) substrate by high temperature annealing. This growth technique is known to result in a pronounced electron-doping (∼10(13) cm(-2)) of graphene, which is thought to originate from an interface carbon buffer layer strongly bound to the substrate. The scanning transmission electron microscopy analysis, carried out at an energy below the knock-on threshold for carbon to ensure no damage is imparted to the film by the electron beam, demonstrates that the buffer layer present on the planar SiC(0001) face delaminates from it on the (112n) facets of SiC surface steps. In addition, electron energy loss spectroscopy reveals that the delaminated layer has a similar electronic configuration to purely sp2-hybridized graphene. These observations are used to explain the local increase of the graphene sheet resistance measured around the surface steps by conductive atomic force microscopy, which we suggest is due to significantly lower substrate-induced doping and a resonant scattering mechanism at the step regions. A first-principles-calibrated theoretical model is proposed to explain the structural instability of the buffer layer on the SiC facets and the resulting delamination.

  4. Detection of interlayer interaction in few-layer graphene

    NASA Astrophysics Data System (ADS)

    Wu, Zefei; Han, Yu; Lin, Jiangxiazi; Zhu, Wei; He, Mingquan; Xu, Shuigang; Chen, Xiaolong; Lu, Huanhuan; Ye, Weiguang; Han, Tianyi; Wu, Yingying; Long, Gen; Shen, Junying; Huang, Rui; Wang, Lin; He, Yuheng; Cai, Yuan; Lortz, Rolf; Su, Dangsheng; Wang, Ning

    2015-08-01

    Bernal-stacked few-layer graphene has been investigated by analyzing its Landau-level spectra through quantum capacitance measurements. We find that surface relaxation, which is insignificant in trilayer graphene, starts to manifest in Bernal-stacked tetralayer graphene. In trilayer graphene, the interlayer interaction parameters are generally similar to those of graphite. However, in tetralayer graphene, the hopping parameters of the two bulk layers are quite different from those of the two outer layers. This represents direct evidence of the surface relaxation phenomenon. Traditionally, the van der Waals interaction between the carbon layers is thought to be insignificant. However, we suggest that the interlayer interaction is an important factor in explaining the observed results, and the symmetry-breaking effects in graphene sublattice are not negligible.

  5. Controllable synthesis of graphene sheets with different numbers of layers and effect of the number of graphene layers on the specific capacity of anode material in lithium-ion batteries

    SciTech Connect

    Tong, Xin; Wang, Hui; Wang, Gang; Wan, Lijuan; Ren, Zhaoyu; Bai, Jintao; Bai, Jinbo

    2011-05-15

    High quality graphene sheets are synthesized through efficient oxidation process followed by rapid thermal expansion and reduction by H{sub 2}. The number of graphene layers is controlled by tuning the oxidation degree of GOs. The higher the oxidation degree of GOs is getting, the fewer the numbers of graphene layers can be obtained. The material is characterized by elemental analysis, thermo-gravimetric analysis, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and Fourier transform infrared spectroscopies. The obtained graphene sheets with single, triple and quintuplicate layers as anode materials exhibit a high reversible capacity of 1175, 1007, and 842 mA h g{sup -1}, respectively, which show that the graphene sheets with fewer layers have higher reversible capacity. -- Graphical abstract: The typical TEM images of the graphene sheets derived from GO3(a), GO2(b) and GO1(c). Display Omitted Highlights: {yields} With the oxidation degree of GO increasing, the numbers of graphene layers decreased. {yields} With the numbers of graphene layers decreasing, the reversible capacity improved. {yields} Graphene sheets with single-layer exhibit the best electrochemical performances.

  6. Confined water between two graphene layers

    NASA Astrophysics Data System (ADS)

    Peeters, Francois; Sobrino Fernandez, Mario; Neek-Amal, Mehdi; Condensed Matter Theory Team

    Water confined between two layers with a separation of a few Angstrom forms a layered two- dimensional ice structure. Using large scale molecular dynamics simulations with the adoptable ReaxFF interatomic potential we found that monolayer ice with a rhombic-square structure nucleates between graphene layers which is non-polar and non-ferroelectric. We provide different energetic considerations and H-bonding results that explain the inter-layer and intra-layer properties of two-dimensional ice. The controversional AA-stacking found experimentally is consistent with our minimum energy crystal structure of bilayer ice. Furthermore, we predict that odd-number of layers of ice has the same lattice structure as monolayer ice, while even number of ice layers exhibit the square ice AA-stacking of bilayer ice.We predict that an inplane electric field polarizes the water molecules resulting in distinct-ferroelectricity. Electrical hysteresis in the response of the total dipole moment of monolayer ice is found

  7. Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

    PubMed Central

    Wang, Zhu-Jun; Dong, Jichen; Cui, Yi; Eres, Gyula; Timpe, Olaf; Fu, Qiang; Ding, Feng; Schloegl, R.; Willinger, Marc-Georg

    2016-01-01

    In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene–graphene and graphene–substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite. PMID:27759024

  8. Single adatom dynamics at monatomic steps of free-standing few-layer reduced graphene

    PubMed Central

    Chang, Haixin; Saito, Mitsuhiro; Nagai, Takuro; Liang, Yunye; Kawazoe, Yoshiyuki; Wang, Zhongchang; Wu, Hongkai; Kimoto, Koji; Ikuhara, Yuichi

    2014-01-01

    Steps and their associated adatoms extensively exist and play prominent roles in affecting surface properties of materials. Such impacts should be especially pronounced in two-dimensional, atomically-thin membranes like graphene. However, how single adatom behaves at monatomic steps of few-layer graphene is still illusive. Here, we report dynamics of individual adatom at monatomic steps of free-standing few-layer reduced graphene under the electron beam radiations, and demonstrate the prevalent existence of monatomic steps even down to unexpectedly ultrasmall lateral size of a circular diameter of ~5 Å. Single adatom prefers to stay at the edges of the atomic steps of few-layer reduced graphene and evolve with the steps. Moreover, we also find that how the single adatom behaves at atomic step edges can be remarkably influenced by the type of adatoms and step edges. Such single adatoms at monatomic steps and ultrasmall atomic steps open up a new window for surface physics and chemistry for graphene-based as well as other two-dimensional materials. PMID:25113125

  9. Dynamics of single Fe atoms in graphene vacancies.

    PubMed

    Robertson, Alex W; Montanari, Barbara; He, Kuang; Kim, Judy; Allen, Christopher S; Wu, Yimin A; Olivier, Jaco; Neethling, Jan; Harrison, Nicholas; Kirkland, Angus I; Warner, Jamie H

    2013-04-10

    Focused electron beam irradiation has been used to create mono and divacancies in graphene within a defined area, which then act as trap sites for mobile Fe atoms initially resident on the graphene surface. Aberration-corrected transmission electron microscopy at 80 kV has been used to study the real time dynamics of Fe atoms filling the vacancy sites in graphene with atomic resolution. We find that the incorporation of a dopant atom results in pronounced displacements of the surrounding carbon atoms of up to 0.5 Å, which is in good agreement with density functional theory calculations. Once incorporated into the graphene lattice, Fe atoms can transition to adjacent lattice positions and reversibly switch their bonding between four and three nearest neighbors. The C atoms adjacent to the Fe atoms are found to be more susceptible to Stone-Wales type bond rotations with these bond rotations associated with changes in the dopant bonding configuration. These results demonstrate the use of controlled electron beam irradiation to incorporate dopants into the graphene lattice with nanoscale spatial control.

  10. Atomic force spectroscopy and density-functional study of graphene corrugation on Ru(0001)

    NASA Astrophysics Data System (ADS)

    Voloshina, Elena; Dedkov, Yuriy

    2016-06-01

    Graphene, the thinnest material in the world, can form moiré structures on different substrates, including graphite, h -BN, or metal surfaces. In such systems, the structure of graphene, i.e., its corrugation, as well as its electronic and elastic properties, are defined by the combination of the system geometry and local interaction strength at the interface. The corrugation in such structures on metals is heavily extracted from diffraction or local probe microscopy experiments, and it can be obtained only via comparison with theoretical data, which usually simulate the experimental findings. Here we show that graphene corrugation on metals can be measured directly employing atomic force spectroscopy, and the obtained value coincides with state-of-the-art theoretical results. The presented results demonstrate an unexpected space selectivity for the Δ f (z ) signal in the atomic force spectroscopy in the moiré graphene lattice on Ru(0001), which is explained by the different response of the graphene layer on the indentation process. We also address the elastic reaction of the formed graphene nanodoms on the indentation process by the scanning tip that is important for the modeling and fabrication of graphene-based nanoresonators on the nanoscale.

  11. Direct observation of a long-lived single-atom catalyst chiseling atomic structures in graphene.

    PubMed

    Wang, Wei Li; Santos, Elton J G; Jiang, Bin; Cubuk, Ekin Dogus; Ophus, Colin; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Ciston, Jim; Westervelt, Robert; Kaxiras, Efthimios

    2014-02-12

    Fabricating stable functional devices at the atomic scale is an ultimate goal of nanotechnology. In biological processes, such high-precision operations are accomplished by enzymes. A counterpart molecular catalyst that binds to a solid-state substrate would be highly desirable. Here, we report the direct observation of single Si adatoms catalyzing the dissociation of carbon atoms from graphene in an aberration-corrected high-resolution transmission electron microscope (HRTEM). The single Si atom provides a catalytic wedge for energetic electrons to chisel off the graphene lattice, atom by atom, while the Si atom itself is not consumed. The products of the chiseling process are atomic-scale features including graphene pores and clean edges. Our experimental observations and first-principles calculations demonstrated the dynamics, stability, and selectivity of such a single-atom chisel, which opens up the possibility of fabricating certain stable molecular devices by precise modification of materials at the atomic scale.

  12. Selective growth of graphene in layer-by-layer via chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Park, Jaehyun; An, Hyosub; Choi, Dong-Chul; Hussain, Sajjad; Song, Wooseok; An, Ki-Seok; Lee, Won-Jun; Lee, Naesung; Lee, Wan-Gyu; Jung, Jongwan

    2016-07-01

    Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene on a specific position. The key idea is to deposit a thin Cu layer (~40 nm thick) on pre-grown monolayer graphene and to apply additional growth. The thin Cu atop the graphene/Cu substrate acts as a catalyst to decompose methane (CH4) gas during the additional growth. The adlayer is grown selectively on the pre-grown graphene, and the thin Cu is removed through evaporation during CVD, eventually forming large-area and uniform double layer graphene. With this technology, highly uniform graphene films with precise thicknesses of 1 to 5 layers and graphene check patterns with 1 to 3 layers were successfully demonstrated. This method provides precise LBL growth for a uniform graphene film and a technique for the design of new graphene devices.Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene

  13. Mechanical Deformation of Single- and Few- Layer Graphene on Micro-Scale-Grooved PDMS

    NASA Astrophysics Data System (ADS)

    Rocklin, David; Scharfenberg, Scott; Chialvo, Cesar; Weaver, Richard; Goldbart, Paul; Mason, Nadya

    2009-11-01

    The physical properties of the material graphene are currently of wide interest. To explore their mechanical aspects, we placed graphene flakes, of thicknesses ranging from one to seven layers, on a rubbery PDMS (polydimethylsiloxane) substrate containing microgrooves. We used Atomic Force Microscopy (AFM) imaging techniques to study the resulting deformations of the surface, and found that the graphene adhered to the sample and substantially flattened the profile of the grooves. We have examined this flattening effect within a model based on linear elasticity theory. Thus, we have been able to identify, at least tentatively, the point at which shear stress breaks the interlayer coupling and causes the graphene layers to slide against each other.

  14. Water Desalination Using Nanoporous Single-Layer Graphene with Tunable Pore Size

    SciTech Connect

    Surwade, Sumedh P.; Smirnov, Sergei N.; Vlassiouk, Ivan V.; Unocic, Raymond R.; Veith, Gabriel M.; Dai, Sheng; Mahurin, Shannon Mark

    2015-03-23

    Graphene has great potential to serve as a separation membrane due to its unique properties such as chemical and mechanical stability, flexibility and most importantly its one-atom thickness. In this study, we demonstrate first experimental evidence of the use of single-layer porous graphene as a desalination membrane. Nanometer-sized pores are introduced into single layer graphene using a convenient oxygen plasma etching process that permits tuning of the pore size. The resulting porous graphene membrane exhibited high rejection of salt ions and rapid water transport, thus functioning as an efficient water desalination membrane. Salt rejection selectivity of nearly 100% and exceptionally high water fluxes exceeding 105 g m-2 s-1 at 40 C were measured using saturated water vapor as a driving force.

  15. Water Desalination Using Nanoporous Single-Layer Graphene with Tunable Pore Size

    DOE PAGES

    Surwade, Sumedh P.; Smirnov, Sergei N.; Vlassiouk, Ivan V.; Unocic, Raymond R.; Veith, Gabriel M.; Dai, Sheng; Mahurin, Shannon Mark

    2015-03-23

    Graphene has great potential to serve as a separation membrane due to its unique properties such as chemical and mechanical stability, flexibility and most importantly its one-atom thickness. In this study, we demonstrate first experimental evidence of the use of single-layer porous graphene as a desalination membrane. Nanometer-sized pores are introduced into single layer graphene using a convenient oxygen plasma etching process that permits tuning of the pore size. The resulting porous graphene membrane exhibited high rejection of salt ions and rapid water transport, thus functioning as an efficient water desalination membrane. Salt rejection selectivity of nearly 100% and exceptionallymore » high water fluxes exceeding 105 g m-2 s-1 at 40 C were measured using saturated water vapor as a driving force.« less

  16. Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers

    NASA Astrophysics Data System (ADS)

    Singh, Simranjeet; Katoch, Jyoti; Xu, Jinsong; Tan, Cheng; Zhu, Tiancong; Amamou, Walid; Hone, James; Kawakami, Roland

    2016-09-01

    We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous experimental studies have been unable to achieve spin relaxation times in the nanosecond regime, suggesting potential problems originating from the contacts. Here, we investigate spin relaxation in graphene spin valves with h-BN barriers and observe room temperature spin lifetimes in excess of a nanosecond, which provides experimental confirmation that h-BN is indeed a good barrier material for spin injection into graphene. By carrying out measurements with different thicknesses of h-BN, we show that few layer h-BN is a better choice than monolayer for achieving high non-local spin signals and longer spin relaxation times in graphene.

  17. Multilayer films of cationic graphene-polyelectrolytes and anionic graphene-polyelectrolytes fabricated using layer-by-layer self-assembly

    NASA Astrophysics Data System (ADS)

    Rani, Adila; Oh, Kyoung Ah; Koo, Hyeyoung; Lee, Hyung jung; Park, Min

    2011-03-01

    Extremely thin sheets of carbon atoms called graphene have been predicted to possess excellent thermal properties, electrical conductivity, and mechanical stiffness. To harness such properties in composite materials for multifunctional applications, one would require the incorporation of graphene. In this study, new thin film composites were created using layer-by-layer (LBL) assembly of polymer-coated graphitic nanoplatelets. The positive and negative polyelectrolytes used to cover graphene sheets were poly allylamine hydrochloride (PAH) and poly sodium 4-styrenesulfonate (PSS). The synthesized poly allylamine hydrochloride-graphene (PAH-G) and poly sodium 4-styrenesulfonate-gaphene (PSS-G) were characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and thermo gravimetric analysis (TGA). The multilayer films created by spontaneous sequential adsorption of PAH-G and PSS-G were characterized by ultra violet spectroscopy (UV-vis), scanning electron microscopy (SEM), and AFM. The electrical conductivity of the graphene/polyelectrolyte multilayer film composites measured by the four-point probe method was 0.2 S cm -1, which was sufficient for the construction of advanced electro-optical devices and sensors.

  18. Dynamical screening of the van der Waals interaction between graphene layers.

    PubMed

    Dappe, Y J; Bolcatto, P G; Ortega, J; Flores, F

    2012-10-24

    The interaction between graphene layers is analyzed combining local orbital DFT and second order perturbation theory. For this purpose we use the linear combination of atomic orbitals-orbital occupancy (LCAO-OO) formalism, that allows us to separate the interaction energy as the sum of a weak chemical interaction between graphene layers plus the van der Waals interaction (Dappe et al 2006 Phys. Rev. B 74 205434). In this work, the weak chemical interaction is calculated by means of corrected-LDA calculations using an atomic-like sp(3)d(5) basis set. The van der Waals interaction is calculated by means of second order perturbation theory using an atom-atom interaction approximation and the atomic-like-orbital occupancies. We also analyze the effect of dynamical screening in the van der Waals interaction using a simple model. We find that this dynamical screening reduces by 40% the van der Waals interaction. Taking this effect into account, we obtain a graphene-graphene interaction energy of 70 ± 5 meV/atom in reasonable agreement with the experimental evidence.

  19. Interaction between single gold atom and the graphene edge: A study via aberration-corrected transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Wang, Hongtao; Li, Kun; Cheng, Yingchun; Wang, Qingxiao; Yao, Yingbang; Schwingenschlögl, Udo; Zhang, Xixiang; Yang, Wei

    2012-04-01

    Interaction between single noble metal atoms and graphene edges has been investigated via aberration-corrected and monochromated transmission electron microscopy. A collective motion of the Au atom and the nearby carbon atoms is observed in transition between energy-favorable configurations. Most trapping and detrapping processes are assisted by the dangling carbon atoms, which are more susceptible to knock-on displacements by electron irradiation. Thermal energy is lower than the activation barriers in transition among different energy-favorable configurations, which suggests electron-beam irradiation can be an efficient way of engineering the graphene edge with metal atoms.Interaction between single noble metal atoms and graphene edges has been investigated via aberration-corrected and monochromated transmission electron microscopy. A collective motion of the Au atom and the nearby carbon atoms is observed in transition between energy-favorable configurations. Most trapping and detrapping processes are assisted by the dangling carbon atoms, which are more susceptible to knock-on displacements by electron irradiation. Thermal energy is lower than the activation barriers in transition among different energy-favorable configurations, which suggests electron-beam irradiation can be an efficient way of engineering the graphene edge with metal atoms. Electronic supplementary information (ESI) available: Additional Figures for characterization of mono-layer CVD graphene samples with free edges and Pt atoms decorations and analysis of the effect of electron irradiation; supporting movie on edge evolution. See DOI: 10.1039/c2nr00059h

  20. Correlating Atomic Structure and Transport in Suspended Graphene Nanoribbons

    PubMed Central

    2015-01-01

    Graphene nanoribbons (GNRs) are promising candidates for next generation integrated circuit (IC) components; this fact motivates exploration of the relationship between crystallographic structure and transport of graphene patterned at IC-relevant length scales (<10 nm). We report on the controlled fabrication of pristine, freestanding GNRs with widths as small as 0.7 nm, paired with simultaneous lattice-resolution imaging and electrical transport characterization, all conducted within an aberration-corrected transmission electron microscope. Few-layer GNRs very frequently formed bonded-bilayers and were remarkably robust, sustaining currents in excess of 1.5 μA per carbon bond across a 5 atom-wide ribbon. We found that the intrinsic conductance of a sub-10 nm bonded bilayer GNR scaled with width as GBL(w) ≈ 3/4(e2/h)w, where w is the width in nanometers, while a monolayer GNR was roughly five times less conductive. Nanosculpted, crystalline monolayer GNRs exhibited armchair-terminated edges after current annealing, presenting a pathway for the controlled fabrication of semiconducting GNRs with known edge geometry. Finally, we report on simulations of quantum transport in GNRs that are in qualitative agreement with the observations. PMID:24954396

  1. Correlating atomic structure and transport in suspended graphene nanoribbons.

    PubMed

    Qi, Zhengqing John; Rodríguez-Manzo, Julio A; Botello-Méndez, Andrés R; Hong, Sung Ju; Stach, Eric A; Park, Yung Woo; Charlier, Jean-Christophe; Drndić, Marija; Johnson, A T Charlie

    2014-08-13

    Graphene nanoribbons (GNRs) are promising candidates for next generation integrated circuit (IC) components; this fact motivates exploration of the relationship between crystallographic structure and transport of graphene patterned at IC-relevant length scales (<10 nm). We report on the controlled fabrication of pristine, freestanding GNRs with widths as small as 0.7 nm, paired with simultaneous lattice-resolution imaging and electrical transport characterization, all conducted within an aberration-corrected transmission electron microscope. Few-layer GNRs very frequently formed bonded-bilayers and were remarkably robust, sustaining currents in excess of 1.5 μA per carbon bond across a 5 atom-wide ribbon. We found that the intrinsic conductance of a sub-10 nm bonded bilayer GNR scaled with width as GBL(w) ≈ 3/4(e(2)/h)w, where w is the width in nanometers, while a monolayer GNR was roughly five times less conductive. Nanosculpted, crystalline monolayer GNRs exhibited armchair-terminated edges after current annealing, presenting a pathway for the controlled fabrication of semiconducting GNRs with known edge geometry. Finally, we report on simulations of quantum transport in GNRs that are in qualitative agreement with the observations.

  2. Spotting 2D atomic layers on aluminum nitride thin films.

    PubMed

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

    2015-10-23

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  3. Nanoscale imaging of freestanding nitrogen doped single layer graphene.

    PubMed

    Iyer, Ganjigunte R S; Wang, Jian; Wells, Garth; Bradley, Michael P; Borondics, Ferenc

    2015-02-14

    Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale.

  4. Controlling Interfacial Reactions and Intermetallic Compound Growth at the Interface of a Lead-free Solder Joint with Layer-by-Layer Transferred Graphene.

    PubMed

    Ko, Yong-Ho; Lee, Jong-Dae; Yoon, Taeshik; Lee, Chang-Woo; Kim, Taek-Soo

    2016-03-01

    The immoderate growth of intermetallic compounds (IMCs) formed at the interface of a solder metal and the substrate during soldering can degrade the mechanical properties and reliability of a solder joint in electronic packaging. Therefore, it is critical to control IMC growth at the solder joints between the solder and the substrate. In this study, we investigated the control of interfacial reactions and IMC growth by the layer-by-layer transfer of graphene during the reflow process at the interface between Sn-3.0Ag-0.5Cu (in wt %) lead-free solder and Cu. As the number of graphene layers transferred onto the surface of the Cu substrate increased, the thickness of the total IMC (Cu6Sn5 and Cu3Sn) layer decreased. After 10 repetitions of the reflow process for 50 s above 217 °C, the melting temperature of Sn-3.0Ag-0.5Cu, with a peak temperature of 250 °C, the increase in thickness of the total IMC layer at the interface with multiple layers of graphene was decreased by more than 20% compared to that at the interface of bare Cu without graphene. Furthermore, the average diameter of the Cu6Sn5 scallops at the interface with multiple layers of graphene was smaller than that at the interface without graphene. Despite 10 repetitions of the reflow process, the growth of Cu3Sn at the interface with multiple layers of graphene was suppressed by more than 20% compared with that at the interface without graphene. The multiple layers of graphene at the interface between the solder metal and the Cu substrate hindered the diffusion of Cu atoms from the Cu substrate and suppressed the reactions between Cu and Sn in the solder. Thus, the multiple layers of graphene transferred at the interface between dissimilar metals can control the interfacial reaction and IMC growth occurring at the joining interface. PMID:26856638

  5. Nanoscale imaging of freestanding nitrogen doped single layer graphene

    NASA Astrophysics Data System (ADS)

    Iyer, Ganjigunte R. S.; Wang, Jian; Wells, Garth; Bradley, Michael P.; Borondics, Ferenc

    2015-01-01

    Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale.Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr05385k

  6. High temperature and current density induced degradation of multi-layer graphene

    SciTech Connect

    Wang, Baoming; Haque, M. A.; Mag-isa, Alexander E.; Kim, Jae-Hyun; Lee, Hak-Joo

    2015-10-19

    We present evidence of moderate current density, when accompanied with high temperature, promoting migration of foreign atoms on the surface of multi-layer graphene. Our in situ transmission electron microscope experiments show migration of silicon atoms at temperatures above 800 °C and current density around 4.2 × 10{sup 7} A/cm{sup 2}. Originating from the micro-machined silicon structures that clamp the freestanding specimen, the atoms are observed to react with the carbon atoms in the multi-layer graphene to produce silicon carbide at temperatures of 900–1000 °C. In the absence of electrical current, there is no migration of silicon and only pyrolysis of polymeric residue is observed.

  7. Strong piezoelectricity in single-layer graphene deposited on SiO2 grating substrates.

    PubMed

    da Cunha Rodrigues, Gonçalo; Zelenovskiy, Pavel; Romanyuk, Konstantin; Luchkin, Sergey; Kopelevich, Yakov; Kholkin, Andrei

    2015-06-25

    Electromechanical response of materials is a key property for various applications ranging from actuators to sophisticated nanoelectromechanical systems. Here electromechanical properties of the single-layer graphene transferred onto SiO2 calibration grating substrates is studied via piezoresponse force microscopy and confocal Raman spectroscopy. The correlation of mechanical strains in graphene layer with the substrate morphology is established via Raman mapping. Apparent vertical piezoresponse from the single-layer graphene supported by underlying SiO2 structure is observed by piezoresponse force microscopy. The calculated vertical piezocoefficient is about 1.4 nm V(-1), that is, much higher than that of the conventional piezoelectric materials such as lead zirconate titanate and comparable to that of relaxor single crystals. The observed piezoresponse and achieved strain in graphene are associated with the chemical interaction of graphene's carbon atoms with the oxygen from underlying SiO2. The results provide a basis for future applications of graphene layers for sensing, actuating and energy harvesting.

  8. Plasmon modes of circular cylindrical double-layer graphene.

    PubMed

    Zhao, Tao; Hu, Min; Zhong, Renbin; Chen, Xiaoxing; Zhang, Ping; Gong, Sen; Zhang, Chao; Liu, Shenggang

    2016-09-01

    In this paper, a theoretical investigation on plasmon modes in a circular cylindrical double-layer graphene structure is presented. Due to the interlayer electromagnetic interaction, there exist two branches of plasmon modes, the optical plasmon mode and the acoustic plasmon mode. The characteristics of these two modes, such as mode pattern, effective mode index and propagation loss, are analyzed. The modal behaviors can be effectively tuned by changing the distance between two graphene layers, the chemical potential of graphene and the permittivity of interlayer dielectric. Importantly, the breakup of tradeoff between mode confinement and propagation loss is discovered in the distance-dependent modal behavior, which originates from the unique dispersion properties of a double-layer graphene system. As a consequence, both strong mode confinement and longer propagation length can be achieved. Our results may provide good opportunities for developing applications based on graphene plasmonics in circular cylindrical structure. PMID:27607651

  9. Plasmon modes of circular cylindrical double-layer graphene.

    PubMed

    Zhao, Tao; Hu, Min; Zhong, Renbin; Chen, Xiaoxing; Zhang, Ping; Gong, Sen; Zhang, Chao; Liu, Shenggang

    2016-09-01

    In this paper, a theoretical investigation on plasmon modes in a circular cylindrical double-layer graphene structure is presented. Due to the interlayer electromagnetic interaction, there exist two branches of plasmon modes, the optical plasmon mode and the acoustic plasmon mode. The characteristics of these two modes, such as mode pattern, effective mode index and propagation loss, are analyzed. The modal behaviors can be effectively tuned by changing the distance between two graphene layers, the chemical potential of graphene and the permittivity of interlayer dielectric. Importantly, the breakup of tradeoff between mode confinement and propagation loss is discovered in the distance-dependent modal behavior, which originates from the unique dispersion properties of a double-layer graphene system. As a consequence, both strong mode confinement and longer propagation length can be achieved. Our results may provide good opportunities for developing applications based on graphene plasmonics in circular cylindrical structure.

  10. Atomic-scale control of graphene magnetism by using hydrogen atoms.

    PubMed

    González-Herrero, Héctor; Gómez-Rodríguez, José M; Mallet, Pierre; Moaied, Mohamed; Palacios, Juan José; Salgado, Carlos; Ugeda, Miguel M; Veuillen, Jean-Yves; Yndurain, Félix; Brihuega, Iván

    2016-04-22

    Isolated hydrogen atoms absorbed on graphene are predicted to induce magnetic moments. Here we demonstrate that the adsorption of a single hydrogen atom on graphene induces a magnetic moment characterized by a ~20-millielectron volt spin-split state at the Fermi energy. Our scanning tunneling microscopy (STM) experiments, complemented by first-principles calculations, show that such a spin-polarized state is essentially localized on the carbon sublattice opposite to the one where the hydrogen atom is chemisorbed. This atomically modulated spin texture, which extends several nanometers away from the hydrogen atom, drives the direct coupling between the magnetic moments at unusually long distances. By using the STM tip to manipulate hydrogen atoms with atomic precision, it is possible to tailor the magnetism of selected graphene regions.

  11. Silicon Layer Intercalation and Interface Properties between Graphene and Metal hosts

    NASA Astrophysics Data System (ADS)

    Wang, Yeliang; Mao, Jinhai; Meng, Lei; Gao, Hongjun; Junfeng He Collaboration; Shixuan Du Collaboration; Xingjiang Zhou Collaboration; A. H. Castro Neto Collaboration

    2013-03-01

    Graphene is being considered as a contender as the reference material with extraordinary properties for a post-CMOS technology. The availability of high quality and large scale single crystal graphene is fundamental for it to fulfill its promise in electronic applications. Graphene is usually grown on a metallic substrate from which it has to be transferred before it can be used. However, uncontrolled shear and strain, associated with the transfer and the presence of extended domains, lead to unavoidable tearing, rendering it useless for scalable production. We propose a way to overcome this bottleneck and produce high quality, free standing graphene by intercalating Si in graphene epitaxially grown on metals, like Ru(0001) & Ir(111). This G/Si/metal architecture, produced by the silicon-layer intercalation approach (SIA), was characterized by STM/STS, Raman, and angle resolved electron photoemission spectroscopy (ARPES) and proves the high structural and electronic qualities of the new composite. The SIA eliminates the need for the graphene transfer and also allows for an atomic control of the distance between the graphene and the metal. Graphene Research Center, Singapore National University.

  12. Driving Forces of Conformational Changes in Single-Layer Graphene Oxide

    PubMed Central

    2012-01-01

    The extensive oxygen-group functionality of single-layer graphene oxide proffers useful anchor sites for chemical functionalization in the controlled formation of graphene architecture and composites. However, the physicochemical environment of graphene oxide and its single-atom thickness facilitate its ability to undergo conformational changes due to responses to its environment, whether pH, salinity, or temperature. Here, we report experimental and molecular simulations confirming the conformational changes of single-layer graphene oxide sheets from the wet or dry state. MD, PM6, and ab initio simulations of dry SLG and dry and wetted SLGO and electron microscopy imaging show marked differences in the properties of the materials that can explain variations in previously observed results for the pH dependent behavior of SLGO and electrical conductivity of chemically modified graphene-polymer composites. Understanding the physicochemical responses of graphene and graphene oxide architecture and performing selected chemistry will ultimately facilitate greater tunability of their performance. PMID:22494387

  13. Surface stress of graphene layers supported on soft substrate

    PubMed Central

    Du, Feng; Huang, Jianyong; Duan, Huiling; Xiong, Chunyang; Wang, Jianxiang

    2016-01-01

    We obtain the surface stress of a single layer and multilayers of graphene supported on silicone substrates by measuring the deformation of the graphene-covered substrates induced by the surface tension of liquid droplets together with the Neumann’s triangle concept. We find that the surface stress of the graphene-covered substrate is significant larger than that of the bare substrate, and it increases with increasing graphene layers, and finally reaches a constant value of about 120 mN/m on three and more layers of graphene. This work demonstrates that the apparent surface stress of graphene-substrate systems can be tuned by the substrate and the graphene layers. The surface stress and the tuning effect of the substrate on it may have applications in design and characterization of graphene-based ultra-sensitive sensors and other devices. Moreover, the method may also be used to measure the surface stress of other ultrathin films supported on soft substrates. PMID:27166087

  14. SrO(001) on graphene: a universal buffer layer for integration of complex oxides

    NASA Astrophysics Data System (ADS)

    Ahmed, Adam; Wen, Hua; Pinchuk, Igor; Zhu, Tiancong; Kawakami, Roland

    2015-03-01

    We report the successful growth of high-quality crystalline SrO on highly-ordered pyrolytic graphite (HOPG) and single layer graphene by molecular beam epitaxy. The epitaxial SrO layers have (001) orientation as confirmed by x-ray diffraction (XRD), and atomic force microscopy measurements show rms surface roughness of optimal films to be 1.2 Å. Transport measurements of exfoliated graphene after SrO deposition show a strong dependence between the Dirac point and Sr oxidation. To show the utility of SrO as a buffer layer for complex oxide integration, we grew perovskite crystal SrTiO3 on SrO, and it was also confirmed to have (001) orientation from x-ray diffraction. This materials advancement opens the door to integration of many other complex oxides to explore novel correlated electron physics in graphene.

  15. Partial Dislocations in Graphene and Their Atomic Level Migration Dynamics.

    PubMed

    Robertson, Alex W; Lee, Gun-Do; He, Kuang; Fan, Ye; Allen, Christopher S; Lee, Sungwoo; Kim, Heeyeon; Yoon, Euijoon; Zheng, Haimei; Kirkland, Angus I; Warner, Jamie H

    2015-09-01

    We demonstrate the formation of partial dislocations in graphene at elevated temperatures of ≥500 °C with single atom resolution aberration corrected transmission electron microscopy. The partial dislocations spatially redistribute strain in the lattice, providing an energetically more favorable configuration to the perfect dislocation. Low-energy migration paths mediated by partial dislocation formation have been observed, providing insights into the atomistic dynamics of graphene during annealing. These results are important for understanding the high temperature plasticity of graphene and partial dislocation behavior in related crystal systems, such as diamond cubic materials.

  16. Self-healing of vacancy defects in single-layer graphene and silicene

    NASA Astrophysics Data System (ADS)

    Özçelik, V. Ongun; Gurel, H. Hakan; Ciraci, S.

    2013-07-01

    Self-healing mechanisms of vacancy defects in graphene and silicene are studied using first-principles calculations. We investigated host adatom adsorption, diffusion, vacancy formation, and revealed atomistic mechanisms in the healing of single, double, and triple vacancies of single-layer graphene and silicene. Silicon adatom, which is adsorbed to silicene at the top site forms a dumbbell-like structure by pushing one Si atom underneath. The asymmetric reconstruction of the single vacancy in graphene is induced by the magnetization through the rebonding of two dangling bonds and acquiring a significant magnetic moment through the remaining unsaturated dangling bond. In silicene, three twofold coordinated atoms surrounding the single vacancy become fourfold coordinated and nonmagnetic through rebonding. The energy gained through new bond formation becomes the driving force for the reconstruction. Under the external supply of host atoms, while the vacancy defects of graphene heal perfectly, the Stone-Wales defect can form in the course of healing of silicene vacancy. The electronic and magnetic properties of suspended, single-layer graphene and silicene are modified by reconstructed vacancy defects.

  17. Self Healing of Vacancy Defects in Single Layer Graphene and Silicene

    NASA Astrophysics Data System (ADS)

    Ozcelik, V. Ongun; Gurel, Hakan; Ciraci, Salim

    2014-03-01

    Self healing mechanisms of vacancy defects in graphene and silicene are studied using first principles calculations. We investigated host adatom adsorption, diffusion, vacancy formation and revealed atomistic mechanisms in the healing of single, double and triple vacancies of single layer graphene and silicene. Silicon adatom, which is adsorbed to silicene at the top site forms a dumbbell like structure by pushing one Si atom underneath. The asymmetric reconstruction of the single vacancy in graphene is induced by the magnetization through the rebonding of two dangling bonds and acquiring a significant magnetic moment through remaining unsaturated dangling bond. In silicene, three two-fold coordinated atoms surrounding the single vacancy become four-fold coordinated and nonmagnetic through rebonding. The energy gained through new bond formation becomes the driving force for the reconstruction. Under the external supply of host atoms, while the vacancy defects of graphene heal perfectly, Stone-Wales defect can form in the course of healing of silicene vacancy. The electronic and magnetic properties of suspended, single layer graphene and silicene are modified by reconstructed vacancy defects.

  18. Graphene Layer Growth Chemistry: Five-Six-Ring Flip Reaction

    SciTech Connect

    Whitesides, Russell; Domin, Dominik; Lester Jr., William A.; Frenklach, Michael

    2007-03-24

    A theoretical study revealed a new reaction pathway, in which a fused five and six-membered ring complex on the zigzag edge of a graphene layer isomerizes to reverse its orientation, or 'flips,' after activation by a gaseous hydrogen atom. The process is initiated by hydrogen addition to or abstraction from the surface complex. The elementary steps of the migration pathway were analyzed using density-functional theory (DFT) calculations to examine the region of the potential energy surface associated with the pathway. The DFT calculations were performed on substrates modeled by the zigzag edges of tetracene and pentacene. Rate constants for the flip reaction were obtained by the solution of energy master equation utilizing the DFT energies, frequencies, and geometries. The results indicate that this reaction pathway is competitive with other pathways important to the edge evolution of aromatic species in high temperature environments.

  19. Understanding Graphene Coatings: Characterization of Solvent Exfoliated Few-Layer Graphene by Raman Scattering

    NASA Astrophysics Data System (ADS)

    Camacho, Jorge; Lampert, Lester; Arifin, Willson; Flaig, Robby; Rue, Timothy; Krisko, Tyler; Hamilton, James

    2011-03-01

    Graphene has unique properties like its ballistic transport at room temperature combined with chemical and mechanical stability and these properties can be extended to few-layer of graphene. Potential large-area applications that include transparent conductive coatings and fuel cell electrodes require dispersing graphene in a fluid phase. Graphene nano-platelets can be synthesized by dispersion and exfoliation of graphite in organic solvents such N-methyl-pyrrolidine (NMP) and cyclohexylpyrrolidone (CHP). However, liquid-phase exfoliation produces graphene with defects that can disrupt the electronic properties. One of the remaining questions is whether the defects created during synthesis can be minimized. We report a Raman spectroscopic study showing that defects in few-layer graphene produced by liquid-phase exfoliation of graphite can be controlled by the type or mixture of solvents used.

  20. PREFACE: Ultrathin layers of graphene, h-BN and other honeycomb structures Ultrathin layers of graphene, h-BN and other honeycomb structures

    NASA Astrophysics Data System (ADS)

    Geber, Thomas; Oshima, Chuhei

    2012-08-01

    Since ancient times, pure carbon materials have been familiar in human society—not only diamonds in jewellery and graphite in pencils, but also charcoal and coal which have been used for centuries as fuel for living and industry. Carbon fibers are stronger, tougher and lighter than steel and increase material efficiency because of their lower weight. Today, carbon fibers and related composite materials are used to make the frames of bicycles, cars and even airplane parts. The two-dimensional allotrope, now called graphene, is just a single layer of carbon atoms, locked together in a strongly bonded honeycomb lattice. In plane, graphene is stiffer than diamond, but out-of-plane it is soft, like rubber. It is virtually invisible, may conduct electricity (heat) better than copper and weighs next to nothing. Carbon compounds with two carbon atoms as a base, such as graphene, graphite or diamond, have isoelectronic sister compounds made of boron-nitrogen pairs: hexagonal and cubic boron nitride, with almost the same lattice constant. Although the two 2D sisters, graphene and h-BN, have the same number of valence electrons, their electronic properties are very different: freestanding h-BN is an insulator, while charge carriers in graphene are highly mobile. The past ten years have seen a great expansion in studies of single-layer and few-layer graphene. This activity has been concerned with the π electron transport in graphene, in electric and magnetic fields. More than 30 years ago, however, single-layer graphene and h-BN on solid surfaces were widely investigated. It was noted that they drastically changed the chemical reactivity of surfaces, and they were known to 'poison' heterogeneous catalysts, to passivate surfaces, to prevent oxidation of surfaces and to act as surfactants. Also, it was realized that the controlled growth of h-BN and graphene on substrates yields the formation of mismatch driven superstructures with peculiar template functionality on the

  1. Atomically resolved orientational ordering of C60 molecules on epitaxial graphene on Cu(111)

    NASA Astrophysics Data System (ADS)

    Jung, Minbok; Shin, Dongbin; Sohn, So-Dam; Kwon, Soon-Yong; Park, Noejung; Shin, Hyung-Joon

    2014-09-01

    A detailed understanding of interactions between molecules and graphene is one of the key issues for tailoring the properties of graphene-based molecular devices, because the electronic and structural properties of molecular layers on surfaces are determined by intermolecular and molecule-substrate interactions. Here, we present the atomically resolved experimental measurements of the self-assembled fullerene molecules on single-layer graphene on Cu(111). Fullerene molecules form a (4 × 4) superstructure on graphene/Cu(111), revealing only single molecular orientation. We can resolve the exact adsorption site and the configuration of fullerene by means of low-temperature scanning tunnelling microscopy (LT-STM) and density functional theory (DFT) calculations. The adsorption orientation can be explained in terms of the competition between intermolecular interactions and molecule-substrate interactions, where strong Coulomb interactions among the fullerenes determine the in-plane orientation of the fullerene. Our results provide important implications for developing carbon-based organic devices using a graphene template in the future.A detailed understanding of interactions between molecules and graphene is one of the key issues for tailoring the properties of graphene-based molecular devices, because the electronic and structural properties of molecular layers on surfaces are determined by intermolecular and molecule-substrate interactions. Here, we present the atomically resolved experimental measurements of the self-assembled fullerene molecules on single-layer graphene on Cu(111). Fullerene molecules form a (4 × 4) superstructure on graphene/Cu(111), revealing only single molecular orientation. We can resolve the exact adsorption site and the configuration of fullerene by means of low-temperature scanning tunnelling microscopy (LT-STM) and density functional theory (DFT) calculations. The adsorption orientation can be explained in terms of the competition

  2. Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)

    SciTech Connect

    Velez-Fort, E.; Ouerghi, A.; Silly, M. G.; Sirtti, F.; Eddrief, M.; Marangolo, M.; Shukla, A.

    2014-03-03

    Structural and electronic properties of epitaxial graphene on 4H-SiC were studied before and after an atomic oxidation process. X-ray photoemission spectroscopy indicates that oxygen penetrates into the substrate and decouples a part of the interface layer. Raman spectroscopy demonstrates the increase of defects due to the presence of oxygen. Interestingly, we observed on the near edge x-ray absorption fine structure spectra a splitting of the π* peak into two distinct resonances centered at 284.7 and 285.2 eV. This double structure smears out after the oxidation process and permits to probe the interface architecture between graphene and the substrate.

  3. First-principles study of hydrogen adsorption on titanium-decorated single-layer and bilayer graphenes

    NASA Astrophysics Data System (ADS)

    Pan, Hong-Zhe; Wang, Yong-Long; He, Kai-Hua; Wei, Ming-Zhen; Ouyang, Yu; Chen, Li

    2013-06-01

    The adsorption of hydrogen molecules on titanium-decorated (Ti-decorated) single-layer and bilayer graphenes is studied using density functional theory (DFT) with the relativistic effect. Both the local density approximation (LDA) and the generalized gradient approximation (GGA) are used for obtaining the region of the adsorption energy of H2 molecules on Ti-decorated graphene. We find that a graphene layer with titanium (Ti) atoms adsorbed on both sides can store hydrogen up to 9.51 wt% with average adsorption energy in a range from -0.170 eV to -0.518 eV. Based on the adsorption energy criterion, we find that chemisorption is predominant for H2 molecules when the concentration of H2 molecules absorbed is low while physisorption is predominant when the concentration is high. The computation results for the bilayer graphene decorated with Ti atoms show that the lower carbon layer makes no contribution to hydrogen adsorption.

  4. Energetics of atomic scale structure changes in graphene.

    PubMed

    Skowron, Stephen T; Lebedeva, Irina V; Popov, Andrey M; Bichoutskaia, Elena

    2015-05-21

    The presence of defects in graphene has an essential influence on its physical and chemical properties. The formation, behaviour and healing of defects are determined by energetic characteristics of atomic scale structure changes. In this article, we review recent studies devoted to atomic scale reactions during thermally activated and irradiation-induced processes in graphene. The formation energies of vacancies, adatoms and topological defects are discussed. Defect formation, healing and migration are quantified in terms of activation energies (barriers) for thermally activated processes and by threshold energies for processes occurring under electron irradiation. The energetics of defects in the graphene interior and at the edge is analysed. The effects of applied strain and a close proximity of the edge on the energetics of atomic scale reactions are overviewed. Particular attention is given to problems where further studies are required.

  5. A first principles study on the CVD graphene growth on copper surfaces: A carbon atom incorporation to graphene edges

    NASA Astrophysics Data System (ADS)

    Tajima, Nobuo; Kaneko, Tomoaki; Nara, Jun; Ohno, Takahisa

    2016-11-01

    Carbon atom reactions in the chemical vapor deposition (CVD) processes for graphene production on copper surfaces have been studied by first principles molecular dynamics (MD) simulations at a typical CVD growth temperature. This study focuses on the processes of a carbon atom incorporation to graphene edges. The energy barriers of these carbon atom incorporation reactions have been calculated as ~ 1 eV, which are comparable or slightly larger than the barriers of carbon atom dimerization. We have also found that the surface copper atoms form step like structures to terminate the carbon dangling bonds at graphene edges, which are markedly different from the graphene-copper interactions observed in static calculations.

  6. Electronic interaction between nitrogen atoms in doped graphene.

    PubMed

    Tison, Yann; Lagoute, Jérôme; Repain, Vincent; Chacon, Cyril; Girard, Yann; Rousset, Sylvie; Joucken, Frédéric; Sharma, Dimpy; Henrard, Luc; Amara, Hakim; Ghedjatti, Ahmed; Ducastelle, François

    2015-01-27

    Many potential applications of graphene require either the possibility of tuning its electronic structure or the addition of reactive sites on its chemically inert basal plane. Among the various strategies proposed to reach these objectives, nitrogen doping, i.e., the incorporation of nitrogen atoms in the carbon lattice, leads in most cases to a globally n-doped material and to the presence of various types of point defects. In this context, the interactions between chemical dopants in graphene have important consequences on the electronic properties of the systems and cannot be neglected when interpreting spectroscopic data or setting up devices. In this report, the structural and electronic properties of complex doping sites in nitrogen-doped graphene have been investigated by means of scanning tunneling microscopy and spectroscopy, supported by density functional theory and tight-binding calculations. In particular, based on combined experimental and simulation works, we have systematically studied the electronic fingerprints of complex doping configurations made of pairs of substitutional nitrogen atoms. Localized bonding states are observed between the Dirac point and the Fermi level in contrast with the unoccupied state associated with single substitutional N atoms. For pyridinic nitrogen sites (i.e., the combination of N atoms with vacancies), a resonant state is observed close to the Dirac energy. This insight into the modifications of electronic structure induced by nitrogen doping in graphene provides us with a fair understanding of complex doping configurations in graphene, as it appears in real samples.

  7. Atomic intercalation - a practical method to determine the nanoscale adhesion energy of graphene on HOPG

    NASA Astrophysics Data System (ADS)

    Wang, Jun; Sorescu, Dan; Jeon, Seokmin; Belianinov, Alexei; Kalinin, Sergei; Baddorf, Arthur; Maksymovych, Petro

    A detailed analysis of atomic intercalates in graphite provides a direct estimate of the nanoscale elastic adhesion of a graphene sheet atop highly ordered pyrolytic graphite (HOPG). Atomic intercalation is carried out using conventional ion sputtering, creating ``blisters'' in the top-most layer of the HOPG surface. Scanning tunneling microscopy coupled with image analysis and density functional theory is used to reconstruct the atomic positions and the strain map within the deformed graphene sheet. To estimate the adhesion energy we invoke an analytical model originally devised for macroscopic deformations of graphene. This model yields a value of is 0.221 +/- 0.011 J/m2 for the adhesion energy of graphite, which is in surprisingly good agreement with reported experimental and theoretical values. This implies that mechanical properties of graphene scale at least to lengths of a few nanometers. The simplicity of our method enables analysis of elastic mechanical properties in many two-dimensional layered materials and provides a unique opportunity to investigate the local variability of mechanical properties on the nanoscale. Acknowledgements: Experiments were conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility.

  8. Ultraviolet laser deposition of graphene thin films without catalytic layers

    NASA Astrophysics Data System (ADS)

    Sarath Kumar, S. R.; Alshareef, H. N.

    2013-01-01

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  9. Raman and ellipsometry spectroscopic analysis of graphene films grown directly on Si substrate via CVD technique for estimating the graphene atomic planes number

    NASA Astrophysics Data System (ADS)

    Al-Hazmi, F. S.; Beall, Gary W.; Al-Ghamdi, A. A.; Alshahrie, Ahmed; Shokr, F. S.; Mahmoud, Waleed E.

    2016-08-01

    Two reliable approaches for estimating the number of atomic planes of graphene films grown on Si substrate were demonstrated by Raman and ellipsometry spectroscopies. The first approach depends on the measurement of the ratio of the integrated Raman scattering intensity of the graphene G band to the optical phonon band of Si substrate (IG/ISi). The second approach belongs to ellipsometry measurement of the ratio of the amplitude of the reflected polarized light from the surface of the graphene films to the amplitude of reflected polarized light from the surface of the Si substrate (ΨG/ΨSi). These two approaches could efficiently recognize the number of atomic planes in the graphene films (1 ≤ n ≤ 10). The results were compared with atomic force microscopy (AFM) measurement and showed a linear regression with slope of 0.36 ± 0.01 nm/graphene layer. The Two approaches will open a new avenue to efficiently count the number of graphene layers during the preparation process.

  10. Atomic-Scale Sliding Friction on Graphene in Water.

    PubMed

    Vilhena, J G; Pimentel, Carlos; Pedraz, Patricia; Luo, Feng; Serena, Pedro A; Pina, Carlos M; Gnecco, Enrico; Pérez, Rubén

    2016-04-26

    The sliding of a sharp nanotip on graphene completely immersed in water is investigated by molecular dynamics (MD) and atomic force microscopy. MD simulations predict that the atomic-scale stick-slip is almost identical to that found in ultrahigh vacuum. Furthermore, they show that water plays a purely stochastic role in sliding (solid-to-solid) friction. These observations are substantiated by friction measurements on graphene grown on Cu and Ni, where, oppositely of the operation in air, lattice resolution is readily achieved. Our results promote friction force microscopy in water as a robust alternative to ultra-high-vacuum measurements. PMID:26982997

  11. Atomic-Scale Sliding Friction on Graphene in Water.

    PubMed

    Vilhena, J G; Pimentel, Carlos; Pedraz, Patricia; Luo, Feng; Serena, Pedro A; Pina, Carlos M; Gnecco, Enrico; Pérez, Rubén

    2016-04-26

    The sliding of a sharp nanotip on graphene completely immersed in water is investigated by molecular dynamics (MD) and atomic force microscopy. MD simulations predict that the atomic-scale stick-slip is almost identical to that found in ultrahigh vacuum. Furthermore, they show that water plays a purely stochastic role in sliding (solid-to-solid) friction. These observations are substantiated by friction measurements on graphene grown on Cu and Ni, where, oppositely of the operation in air, lattice resolution is readily achieved. Our results promote friction force microscopy in water as a robust alternative to ultra-high-vacuum measurements.

  12. Atomic structures of silicene layers grown on Ag(111): scanning tunneling microscopy and noncontact atomic force microscopy observations.

    PubMed

    Resta, Andrea; Leoni, Thomas; Barth, Clemens; Ranguis, Alain; Becker, Conrad; Bruhn, Thomas; Vogt, Patrick; Le Lay, Guy

    2013-01-01

    Silicene, the considered equivalent of graphene for silicon, has been recently synthesized on Ag(111) surfaces. Following the tremendous success of graphene, silicene might further widen the horizon of two-dimensional materials with new allotropes artificially created. Due to stronger spin-orbit coupling, lower group symmetry and different chemistry compared to graphene, silicene presents many new interesting features. Here, we focus on very important aspects of silicene layers on Ag(111): First, we present scanning tunneling microscopy (STM) and non-contact Atomic Force Microscopy (nc-AFM) observations of the major structures of single layer and bi-layer silicene in epitaxy with Ag(111). For the (3 × 3) reconstructed first silicene layer nc-AFM represents the same lateral arrangement of silicene atoms as STM and therefore provides a timely experimental confirmation of the current picture of the atomic silicene structure. Furthermore, both nc-AFM and STM give a unifying interpretation of the second layer (√3 × √3)R ± 30° structure. Finally, we give support to the conjectured possible existence of less stable, ~2% stressed, (√7 × √7)R ± 19.1° rotated silicene domains in the first layer.

  13. Ballistic electron propagation through periodic few-layer graphene nanostructures

    NASA Astrophysics Data System (ADS)

    Dragoman, Daniela; Mihalache, Iulia

    2016-10-01

    We have studied electron propagation in periodic structures containing mono- and few-layer graphene regions and/or semiconducting stripes. The calculation of the transmission coefficient in all cases has been performed using transfer matrices inside regions with the same material/potential energy, as well as interface matrices between regions in which the evolution laws of charge carriers differ. Numerical simulations of the transmission coefficient, as well as of the low-temperature conductance, suggest that different periodic structures modulate differently the electrical current. The obtained results can be used to model ballistic transport in all-graphene devices, in particular in few-layer graphene structures.

  14. Few-layer graphene growth from polystyrene as solid carbon source utilizing simple APCVD method

    NASA Astrophysics Data System (ADS)

    Ahmadi, Shahrokh; Afzalzadeh, Reza

    2016-07-01

    This research article presents development of an economical, simple, immune and environment friendly process to grow few-layer graphene by controlling evaporation rate of polystyrene on copper foil as catalyst and substrate utilizing atmospheric pressure chemical vapor deposition (APCVD) method. Evaporation rate of polystyrene depends on molecular structure, amount of used material and temperature. We have found controlling rate of evaporation of polystyrene by controlling the source temperature is easier than controlling the material weight. Atomic force microscopy (AFM) as well as Raman Spectroscopy has been used for characterization of the layers. The frequency of G‧ to G band ratio intensity in some samples varied between 0.8 and 1.6 corresponding to few-layer graphene. Topography characterization by atomic force microscopy confirmed Raman results.

  15. Advanced atom chips with two metal layers.

    SciTech Connect

    Stevens, James E.; Blain, Matthew Glenn; Benito, Francisco M.; Biedermann, Grant

    2010-12-01

    A design concept, device layout, and monolithic microfabrication processing sequence have been developed for a dual-metal layer atom chip for next-generation positional control of ultracold ensembles of trapped atoms. Atom chips are intriguing systems for precision metrology and quantum information that use ultracold atoms on microfabricated chips. Using magnetic fields generated by current carrying wires, atoms are confined via the Zeeman effect and controllably positioned near optical resonators. Current state-of-the-art atom chips are single-layer or hybrid-integrated multilayer devices with limited flexibility and repeatability. An attractive feature of multi-level metallization is the ability to construct more complicated conductor patterns and thereby realize the complex magnetic potentials necessary for the more precise spatial and temporal control of atoms that is required. Here, we have designed a true, monolithically integrated, planarized, multi-metal-layer atom chip for demonstrating crossed-wire conductor patterns that trap and controllably transport atoms across the chip surface to targets of interest.

  16. Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene

    NASA Astrophysics Data System (ADS)

    Costa, Sara D.; Weis, Johan Ek; Frank, Otakar; Fridrichová, Michaela; Kalbac, Martin

    2016-06-01

    In this report important Raman modes for the evaluation of strain in graphene (the 2D and 2D‧) are analyzed. The isotope labeling is used to disentangle contribution of individual graphene layers of graphene bilayer to the studied Raman modes. It is shown that for Bernal-stacked bilayers, the 2D and the 2D‧ Raman modes have three distinct components that can be assigned to processes originating solely from the top graphene layer, bottom graphene layer, and from a combination of processes originating both from the top and bottom layers. The reported results thus enable addressing the properties of individual graphene layers in graphene bilayer by Raman spectroscopy.

  17. Atomic structure of epitaxial graphene sidewall nanoribbons: flat graphene, miniribbons, and the confinement gap.

    PubMed

    Palacio, Irene; Celis, Arlensiú; Nair, Maya N; Gloter, Alexandre; Zobelli, Alberto; Sicot, Muriel; Malterre, Daniel; Nevius, Meredith S; de Heer, Walt A; Berger, Claire; Conrad, Edward H; Taleb-Ibrahimi, Amina; Tejeda, Antonio

    2015-01-14

    Graphene nanoribbons grown on sidewall facets of SiC have demonstrated exceptional quantized ballistic transport up to 15 μm at room temperature. Angular-resolved photoemission spectroscopy (ARPES) has shown that the ribbons have the band structure of charge neutral graphene, while bent regions of the ribbon develop a bandgap. We present scanning tunneling microscopy and transmission electron microscopy of armchair nanoribbons grown on recrystallized sidewall trenches etched in SiC. We show that the nanoribbons consist of a single graphene layer essentially decoupled from the facet surface. The nanoribbons are bordered by 1-2 nm wide bent miniribbons at both the top and bottom edges of the nanoribbons. We establish that nanoscale confinement in the graphene miniribbons is the origin of the local large band gap observed in ARPES. The structural results presented here show how this gap is formed and provide a framework to help understand ballistic transport in sidewall graphene.

  18. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

    PubMed Central

    Sediri, Haikel; Pierucci, Debora; Hajlaoui, Mahdi; Henck, Hugo; Patriarche, Gilles; Dappe, Yannick J.; Yuan, Sheng; Toury, Bérangère; Belkhou, Rachid; Silly, Mathieu G.; Sirotti, Fausto; Boutchich, Mohamed; Ouerghi, Abdelkarim

    2015-01-01

    Stacking various two-dimensional atomic crystals is a feasible approach to creating unique multilayered van der Waals heterostructures with tailored properties. Herein for the first time, we present a controlled preparation of large-area h-BN/graphene heterostructures via a simple chemical deposition of h-BN layers on epitaxial graphene/SiC(0001). Van der Waals forces, which are responsible for the cohesion of the multilayer system, give rise to an abrupt interface without interdiffusion between graphene and h-BN, as shown by X-ray Photoemission Spectroscopy (XPS) and direct observation using scanning and High-Resolution Transmission Electron Microscopy (STEM/HRTEM). The electronic properties of graphene, such as the Dirac cone, remain intact and no significant charge transfer i.e. doping, is observed. These results are supported by Density Functional Theory (DFT) calculations. We demonstrate that the h-BN capped graphene allows the fabrication of vdW heterostructures without altering the electronic properties of graphene. PMID:26585245

  19. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure.

    PubMed

    Sediri, Haikel; Pierucci, Debora; Hajlaoui, Mahdi; Henck, Hugo; Patriarche, Gilles; Dappe, Yannick J; Yuan, Sheng; Toury, Bérangère; Belkhou, Rachid; Silly, Mathieu G; Sirotti, Fausto; Boutchich, Mohamed; Ouerghi, Abdelkarim

    2015-01-01

    Stacking various two-dimensional atomic crystals is a feasible approach to creating unique multilayered van der Waals heterostructures with tailored properties. Herein for the first time, we present a controlled preparation of large-area h-BN/graphene heterostructures via a simple chemical deposition of h-BN layers on epitaxial graphene/SiC(0001). Van der Waals forces, which are responsible for the cohesion of the multilayer system, give rise to an abrupt interface without interdiffusion between graphene and h-BN, as shown by X-ray Photoemission Spectroscopy (XPS) and direct observation using scanning and High-Resolution Transmission Electron Microscopy (STEM/HRTEM). The electronic properties of graphene, such as the Dirac cone, remain intact and no significant charge transfer i.e. doping, is observed. These results are supported by Density Functional Theory (DFT) calculations. We demonstrate that the h-BN capped graphene allows the fabrication of vdW heterostructures without altering the electronic properties of graphene. PMID:26585245

  20. Atomic Level Distributed Strain within Graphene Divacancies from Bond Rotations.

    PubMed

    Chen, Qu; Robertson, Alex W; He, Kuang; Gong, Chuncheng; Yoon, Euijoon; Lee, Gun-Do; Warner, Jamie H

    2015-08-25

    Vacancy defects play an important role in influencing the properties of graphene, and understanding their detailed atomic structure is crucial for developing accurate models to predict their impact. Divacancies (DVs) are one of the most common defects in graphene and can take three different structural forms through various sequences of bond rotations to minimize the energy. Using aberration-corrected transmission electron microscopy with monochromation of the electron source, we resolve the position of C atoms in graphene and measure the C-C bond lengths within the three DVs, enabling a map of bond strain to be generated. We show that bond rotations reduce the maximum single bond strain reached within a DV and help distribute the strain over a larger number of bonds to minimize the peak magnitude.

  1. Direct visualization of atomically precise nitrogen-doped graphene nanoribbons

    SciTech Connect

    Zhang, Yi; Zhang, Yanfang; Li, Geng; Lu, Jianchen; Du, Shixuan E-mail: feng@mpip-mainz.mpg.de; Gao, Hong-Jun; Lin, Xiao; Berger, Reinhard; Feng, Xinliang E-mail: feng@mpip-mainz.mpg.de; Müllen, Klaus

    2014-07-14

    We have fabricated atomically precise nitrogen-doped chevron-type graphene nanoribbons by using the on-surface synthesis technique combined with the nitrogen substitution of the precursors. Scanning tunneling microscopy and spectroscopy indicate that the well-defined nanoribbons tend to align with the neighbors side-by-side with a band gap of 1.02 eV, which is in good agreement with the density functional theory calculation result. The influence of the high precursor coverage on the quality of the nanoribbons is also studied. We find that graphene nanoribbons with sufficient aspect ratios can only be fabricated at sub-monolayer precursor coverage. This work provides a way to construct atomically precise nitrogen-doped graphene nanoribbons.

  2. Thinning segregated graphene layers on high carbon solubility substrates of rhodium foils by tuning the quenching process.

    PubMed

    Liu, Mengxi; Zhang, Yanfeng; Chen, Yubin; Gao, Yabo; Gao, Teng; Ma, Donglin; Ji, Qingqing; Zhang, Yu; Li, Cong; Liu, Zhongfan

    2012-12-21

    We report the synthesis of large-scale uniform graphene films on high carbon solubility substrates of Rh foils for the first time using an ambient-pressure chemical vapor deposition method. We find that, by increasing the cooling rate in the growth process, the thickness of graphene can be tuned from multilayer to monolayer, resulting from the different segregation amount of carbon atoms from bulk to surface. The growth feature was characterized with scanning electron microscopy, Raman spectra, transmission electron microscopy, and scanning tunneling microscopy. We also find that bilayer or few-layer graphene prefers to stack deviating from the Bernal stacking geometry, with the formation of versatile moiré patterns. On the basis of these results, we put forward a segregation growth mechanism for graphene growth on Rh foils. Of particular importance, we propose that this randomly stacked few-layer graphene can be a model system for exploring some fantastic physical properties such as van Hove singularities.

  3. Formation of graphene layers by vacuum sublimation of silicon carbide using a scanning heat source

    SciTech Connect

    Dmitriev, A. N.; Cherednichenko, D. I.

    2011-12-15

    The kinetics of surface graphitization during dissociative vacuum evaporation of silicon carbide, under the effect of a scanning heat source, is studied. A model of the process is developed. The model provides a means for theoretically treating the dynamics of formation and the number of residual carbon atomic layers. The vapor stoichiometric coefficient which ensures the minimization of the number of structural defects in graphene, is optimized at the sublimation temperature: {theta} = 1/{eta}(T{sub max}). The proposed method can be used as a basis for graphene production technology.

  4. Adsorption of beryllium atoms and clusters both on graphene and in a bilayer of graphite investigated by DFT.

    PubMed

    Ferro, Yves; Fernandez, Nicolas; Allouche, Alain; Linsmeier, Christian

    2013-01-01

    We herein investigate the interaction of beryllium with a graphene sheet and in a bilayer of graphite by means of periodic DFT calculations. In all cases, we find the beryllium atoms to be more weakly bonded on graphene than in the bilayer. Be(2) forms both magnetic and non-magnetic structures on graphene depending on the geometrical configuration of adsorption. We find that the stability of the Be/bilayer system increases with the size of the beryllium clusters inserted into the bilayer of graphite. We also find a charge transfer from beryllium to the graphite layers. All these results are analysed in terms of electronic structure.

  5. Calculation of the superconducting transition temperature of a graphene layer doped with titanium and palladium

    NASA Astrophysics Data System (ADS)

    Vazquez, Gerardo; Magana, Fernando; Salas-Torres, Osiris

    We explore the structural interactions between graphene and transition metals such as palladium (Pd) and titanium (Ti) and the possibility of inducing superconductivity in a graphene sheet in two cases, one by doping its surface with palladium atoms sit on the center of the hexagons of the graphene layer and other by covering the graphene layer with two layers of titanium metal atoms. The results here were obtained from first-principles density functional theory in the local density approximation. The Quantum-Espresso package was used with norm conserving pseudopotentials. All of the structures considered were relaxed to their minimum energy configuration. Phonon frequencies were calculated using the linear-response technique on several phonon wave-vector mesh. The electron-phonon coupling parameter was calculated with several electron momentum k-mesh. The superconducting critical temperature was estimated using the Allen-Dynes formula with μ* = 0.1 - 0.15. We note that palladium and titanium are good candidate materials to show a metal-to-superconductor transition. We thank Dirección General de Asuntos del Personal Académico de la Universidad Nacional Autónoma de México, partial financial support by Grant IN-106514 and we also thank Miztli Super-Computing center the technical assistance.

  6. Single-layer graphene on silicon nitride micromembrane resonators

    SciTech Connect

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja; Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S.; Taylor, Jacob M.; Marcus, Charles M.; Cheol Shin, Yong; Kong, Jing

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  7. Nonlocal thermal transport across embedded few-layer graphene sheets

    SciTech Connect

    Liu, Ying; Huxtable, Scott T.; Yang, Bao; Sumpter, Bobby G.; Qiao, Rui

    2014-11-13

    Thermal transport across the interfaces between few-layer graphene sheets and soft materials exhibits intriguing anomalies when interpreted using the classical Kapitza model, e.g., the conductance of the same interface differs greatly for different modes of interfacial thermal transport. Using atomistic simulations, we show that such thermal transport follows a nonlocal flux-temperature drop constitutive law and is characterized jointly by a quasi-local conductance and a nonlocal conductance instead of the classical Kapitza conductance. Lastly, the nonlocal model enables rationalization of many anomalies of the thermal transport across embedded few-layer graphene sheets and should be used in studies of interfacial thermal transport involving few-layer graphene sheets or other ultra-thin layered materials.

  8. Nonlocal thermal transport across embedded few-layer graphene sheets

    DOE PAGES

    Liu, Ying; Huxtable, Scott T.; Yang, Bao; Sumpter, Bobby G.; Qiao, Rui

    2014-11-13

    Thermal transport across the interfaces between few-layer graphene sheets and soft materials exhibits intriguing anomalies when interpreted using the classical Kapitza model, e.g., the conductance of the same interface differs greatly for different modes of interfacial thermal transport. Using atomistic simulations, we show that such thermal transport follows a nonlocal flux-temperature drop constitutive law and is characterized jointly by a quasi-local conductance and a nonlocal conductance instead of the classical Kapitza conductance. Lastly, the nonlocal model enables rationalization of many anomalies of the thermal transport across embedded few-layer graphene sheets and should be used in studies of interfacial thermal transportmore » involving few-layer graphene sheets or other ultra-thin layered materials.« less

  9. PREFACE: Ultrathin layers of graphene, h-BN and other honeycomb structures Ultrathin layers of graphene, h-BN and other honeycomb structures

    NASA Astrophysics Data System (ADS)

    Geber, Thomas; Oshima, Chuhei

    2012-08-01

    Since ancient times, pure carbon materials have been familiar in human society—not only diamonds in jewellery and graphite in pencils, but also charcoal and coal which have been used for centuries as fuel for living and industry. Carbon fibers are stronger, tougher and lighter than steel and increase material efficiency because of their lower weight. Today, carbon fibers and related composite materials are used to make the frames of bicycles, cars and even airplane parts. The two-dimensional allotrope, now called graphene, is just a single layer of carbon atoms, locked together in a strongly bonded honeycomb lattice. In plane, graphene is stiffer than diamond, but out-of-plane it is soft, like rubber. It is virtually invisible, may conduct electricity (heat) better than copper and weighs next to nothing. Carbon compounds with two carbon atoms as a base, such as graphene, graphite or diamond, have isoelectronic sister compounds made of boron-nitrogen pairs: hexagonal and cubic boron nitride, with almost the same lattice constant. Although the two 2D sisters, graphene and h-BN, have the same number of valence electrons, their electronic properties are very different: freestanding h-BN is an insulator, while charge carriers in graphene are highly mobile. The past ten years have seen a great expansion in studies of single-layer and few-layer graphene. This activity has been concerned with the π electron transport in graphene, in electric and magnetic fields. More than 30 years ago, however, single-layer graphene and h-BN on solid surfaces were widely investigated. It was noted that they drastically changed the chemical reactivity of surfaces, and they were known to 'poison' heterogeneous catalysts, to passivate surfaces, to prevent oxidation of surfaces and to act as surfactants. Also, it was realized that the controlled growth of h-BN and graphene on substrates yields the formation of mismatch driven superstructures with peculiar template functionality on the

  10. Metal-doped graphene layers composed with boron nitride-graphene as an insulator: a nano-capacitor.

    PubMed

    Monajjemi, Majid

    2014-11-01

    A model of a nanoscale dielectric capacitor composed of a few dopants has been investigated in this study. This capacitor includes metallic graphene layers which are separated by an insulating medium containing a few h-BN layers. It has been observed that the elements from group IIIA of the periodic table are more suitable as dopants for hetero-structures of the {metallic graphene/hBN/metallic graphene} capacitors compared to those from groups IA or IIA. In this study, we have specifically focused on the dielectric properties of different graphene/h-BN/graphene including their hetero-structure counterparts, i.e., Boron-graphene/h-BN/Boron-graphene, Al-graphene/h-BN/Al-graphene, Mg-graphene/h-BN/Mg-graphene, and Be-graphene/h-BN/Be-graphene stacks for monolayer form of dielectrics. Moreover, we studied the multi dielectric properties of different (h-BN)n/graphene hetero-structures of Boron-graphene/(h-BN)n/Boron-graphene. PMID:25359456

  11. Complex Materials by Atomic Layer Deposition.

    PubMed

    Schwartzberg, Adam M; Olynick, Deirdre

    2015-10-14

    Complex materials are defined as nanostructured materials with combinations of structure and/or composition that lead to performance surpassing the sum of their individual components. There are many methods that can create complex materials; however, atomic layer deposition (ALD) is uniquely suited to control composition and structural parameters at the atomic level. The use of ALD for creating complex insulators, semiconductors, and conductors is discussed, along with its use in novel structural applications.

  12. Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

    PubMed Central

    Drost, Robert; Kezilebieke, Shawulienu; M. Ervasti, Mikko; Hämäläinen, Sampsa K.; Schulz, Fabian; Harju, Ari; Liljeroth, Peter

    2015-01-01

    The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other. PMID:26584674

  13. Electronic Structure and Morphology of Graphene Layers on SiC

    NASA Astrophysics Data System (ADS)

    Ohta, Taisuke

    2008-03-01

    Recent years have witnessed the discovery and the unique electronic properties of graphene, a sheet of carbon atoms arranged in a honeycomb lattice. The unique linear dispersion relation of charge carriers near the Fermi level (``Dirac Fermions'') lead to exciting transport properties, such as an unusual quantum Hall effect, and have aroused scientific and technological interests. On the way towards graphene-based electronics, a knowledge of the electronic band structure and the morphology of epitaxial graphene films on silicon carbide substrates is imperative. We have studied the evolution of the occupied band structure and the morphology of graphene layers on silicon carbide by systematically increasing the layer thickness. Using angle-resolved photoemission spectroscopy (ARPES), we examine this unique 2D system in its development from single layer to multilayers, by characteristic changes in the π band, the highest occupied state, and the dispersion relation in the out-of-plane electron wave vector in particular. The evolution of the film morphology is evaluated by the combination of low-energy electron microscopy and ARPES. By exploiting the sensitivity of graphene's electronic states to the charge carrier concentration, changes in the on-site Coulomb potential leading to a change of π and π* bands can be examined using ARPES. We demonstrate that, in a graphene bilayer, the gap between π and π* bands can be controlled by selectively adjusting relative carrier concentrations, which suggests a possible application of the graphene bilayer for switching functions in electronic devices. This work was done in collaboration with A. Bostwick, J. L. McChesney, and E. Rotenberg at Advanced Light Source, Lawrence Berkeley National Laboratory, K. Horn at Fritz-Haber-Institut, K. V. Emtsev and Th. Seyller at Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, and F. El Gabaly and A. K. Schmid at National Center for Electron Microscopy, Lawrence Berkeley

  14. Compression behavior of single-layer graphenes.

    PubMed

    Frank, Otakar; Tsoukleri, Georgia; Parthenios, John; Papagelis, Konstantinos; Riaz, Ibtsam; Jalil, Rashid; Novoselov, Kostya S; Galiotis, Costas

    2010-06-22

    Central to most applications involving monolayer graphenes is its mechanical response under various stress states. To date most of the work reported is of theoretical nature and refers to tension and compression loading of model graphenes. Most of the experimental work is indeed limited to the bending of single flakes in air and the stretching of flakes up to typically approximately 1% using plastic substrates. Recently we have shown that by employing a cantilever beam we can subject single graphenes to various degrees of axial compression. Here we extend this work much further by measuring in detail both stress uptake and compression buckling strain in single flakes of different geometries. In all cases the mechanical response is monitored by simultaneous Raman measurements through the shift of either the G or 2D phonons of graphene. Despite the infinitely small thickness of the monolayers, the results show that graphenes embedded in plastic beams exhibit remarkable compression buckling strains. For large length (l)-to-width (w) ratios (> or =0.2) the buckling strain is of the order of -0.5% to -0.6%. However, for l/w < 0.2 no failure is observed for strains even higher than -1%. Calculations based on classical Euler analysis show that the buckling strain enhancement provided by the polymer lateral support is more than 6 orders of magnitude compared to that of suspended graphene in air. PMID:20496881

  15. Free-standing single-atom-thick iron membranes suspended in graphene pores.

    PubMed

    Zhao, Jiong; Deng, Qingming; Bachmatiuk, Alicja; Sandeep, Gorantla; Popov, Alexey; Eckert, Jürgen; Rümmeli, Mark H

    2014-03-14

    The excess of surface dangling bonds makes the formation of free-standing two-dimensional (2D) metals unstable and hence difficult to achieve. To date, only a few reports have demonstrated 2D metal formation over substrates. Here, we show a free-standing crystalline single-atom-thick layer of iron (Fe) using in situ low-voltage aberration-corrected transmission electron microscopy and supporting image simulations. First-principles calculations confirm enhanced magnetic properties for single-atom-thick 2D Fe membranes. This work could pave the way for new 2D structures to be formed in graphene membranes.

  16. Perovskite thin films via atomic layer deposition.

    PubMed

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H

    2015-01-01

    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  17. ZnO layers deposited by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Pécz, B.; Baji, Zs; Lábadi, Z.; Kovács, A.

    2013-11-01

    The structure of 40 nm thick epitaxial ZnO layers grown on single crystalline sapphire and GaN substrates by atomic layer deposition has been studied using transmission electron microscopy. The growth is carried out between 150°C and 300°C without any buffer layer using di-ethyl zinc and water precursors. The ZnO layer on sapphire is found to be polycrystalline, which is probably due to the large misfit (~15 %) and the relatively low deposition temperature. However, the small misfit (~1.8 %) between the ZnO layer that is deposited on GaN at 300°C resulted in a high quality single crystalline layer.

  18. Direct observation of electrically induced Pauli paramagnetism in single-layer graphene using ESR spectroscopy

    NASA Astrophysics Data System (ADS)

    Fujita, Naohiro; Matsumoto, Daisuke; Sakurai, Yuki; Kawahara, Kenji; Ago, Hiroki; Takenobu, Taishi; Marumoto, Kazuhiro

    2016-10-01

    Graphene has been actively investigated as an electronic material owing to many excellent physical properties, such as high charge mobility and quantum Hall effect, due to the characteristics of a linear band structure and an ideal two-dimensional electron system. However, the correlations between the transport characteristics and the spin states of charge carriers or atomic vacancies in graphene have not yet been fully elucidated. Here, we show the spin states of single-layer graphene to clarify the correlations using electron spin resonance (ESR) spectroscopy as a function of accumulated charge density using transistor structures. Two different electrically induced ESR signals were observed. One is originated from a Fermi-degenerate two-dimensional electron system, demonstrating the first observation of electrically induced Pauli paramagnetism from a microscopic viewpoint, showing a clear contrast to no ESR observation of Pauli paramagnetism in carbon nanotubes (CNTs) due to a one-dimensional electron system. The other is originated from the electrically induced ambipolar spin vanishments due to atomic vacancies in graphene, showing a universal phenomenon for carbon materials including CNTs. The degenerate electron system with the ambipolar spin vanishments would contribute to high charge mobility due to the decrease in spin scatterings in graphene.

  19. Direct observation of electrically induced Pauli paramagnetism in single-layer graphene using ESR spectroscopy

    PubMed Central

    Fujita, Naohiro; Matsumoto, Daisuke; Sakurai, Yuki; Kawahara, Kenji; Ago, Hiroki; Takenobu, Taishi; Marumoto, Kazuhiro

    2016-01-01

    Graphene has been actively investigated as an electronic material owing to many excellent physical properties, such as high charge mobility and quantum Hall effect, due to the characteristics of a linear band structure and an ideal two-dimensional electron system. However, the correlations between the transport characteristics and the spin states of charge carriers or atomic vacancies in graphene have not yet been fully elucidated. Here, we show the spin states of single-layer graphene to clarify the correlations using electron spin resonance (ESR) spectroscopy as a function of accumulated charge density using transistor structures. Two different electrically induced ESR signals were observed. One is originated from a Fermi-degenerate two-dimensional electron system, demonstrating the first observation of electrically induced Pauli paramagnetism from a microscopic viewpoint, showing a clear contrast to no ESR observation of Pauli paramagnetism in carbon nanotubes (CNTs) due to a one-dimensional electron system. The other is originated from the electrically induced ambipolar spin vanishments due to atomic vacancies in graphene, showing a universal phenomenon for carbon materials including CNTs. The degenerate electron system with the ambipolar spin vanishments would contribute to high charge mobility due to the decrease in spin scatterings in graphene. PMID:27731338

  20. Significantly reduced thermal diffusivity of free-standing two-layer graphene in graphene foam.

    PubMed

    Lin, Huan; Xu, Shen; Wang, Xinwei; Mei, Ning

    2013-10-18

    We report on a thermal diffusivity study of suspended graphene foam (GF) using the transient electro-thermal technique. Our Raman study confirms the GF is composed of two-layer graphene. By measuring GF of different lengths, we are able to exclude the radiation effect. Using Schuetz's model, the intrinsic thermal diffusivity of the free-standing two-layer graphene is determined with a high accuracy without using knowledge of the porosity of the GF. The intrinsic thermal diffusivity of the two-layer graphene is determined at 1.16-2.22 × 10(-4) m(2) s(-1). The corresponding intrinsic thermal conductivity is 182-349 W m(-1) K(-1), about one order of magnitude lower than those reported for single-layer graphene. Extensive surface impurity defects, wrinkles and rough edges are observed under a scanning electron microscope for the studied GF. These structural defects induce substantial phonon scattering and explain the observed significant thermal conductivity reduction. Our thermal diffusivity characterization of GF provides an advanced way to look into the thermal transport capacity of free-standing graphene with high accuracy and ease of experimental implementation. PMID:24060813

  1. Significantly reduced thermal diffusivity of free-standing two-layer graphene in graphene foam

    NASA Astrophysics Data System (ADS)

    Lin, Huan; Xu, Shen; Wang, Xinwei; Mei, Ning

    2013-10-01

    We report on a thermal diffusivity study of suspended graphene foam (GF) using the transient electro-thermal technique. Our Raman study confirms the GF is composed of two-layer graphene. By measuring GF of different lengths, we are able to exclude the radiation effect. Using Schuetz’s model, the intrinsic thermal diffusivity of the free-standing two-layer graphene is determined with a high accuracy without using knowledge of the porosity of the GF. The intrinsic thermal diffusivity of the two-layer graphene is determined at 1.16-2.22 × 10-4 m2 s-1. The corresponding intrinsic thermal conductivity is 182-349 W m-1 K-1, about one order of magnitude lower than those reported for single-layer graphene. Extensive surface impurity defects, wrinkles and rough edges are observed under a scanning electron microscope for the studied GF. These structural defects induce substantial phonon scattering and explain the observed significant thermal conductivity reduction. Our thermal diffusivity characterization of GF provides an advanced way to look into the thermal transport capacity of free-standing graphene with high accuracy and ease of experimental implementation.

  2. Significantly reduced thermal diffusivity of free-standing two-layer graphene in graphene foam.

    PubMed

    Lin, Huan; Xu, Shen; Wang, Xinwei; Mei, Ning

    2013-10-18

    We report on a thermal diffusivity study of suspended graphene foam (GF) using the transient electro-thermal technique. Our Raman study confirms the GF is composed of two-layer graphene. By measuring GF of different lengths, we are able to exclude the radiation effect. Using Schuetz's model, the intrinsic thermal diffusivity of the free-standing two-layer graphene is determined with a high accuracy without using knowledge of the porosity of the GF. The intrinsic thermal diffusivity of the two-layer graphene is determined at 1.16-2.22 × 10(-4) m(2) s(-1). The corresponding intrinsic thermal conductivity is 182-349 W m(-1) K(-1), about one order of magnitude lower than those reported for single-layer graphene. Extensive surface impurity defects, wrinkles and rough edges are observed under a scanning electron microscope for the studied GF. These structural defects induce substantial phonon scattering and explain the observed significant thermal conductivity reduction. Our thermal diffusivity characterization of GF provides an advanced way to look into the thermal transport capacity of free-standing graphene with high accuracy and ease of experimental implementation.

  3. Nanoscale Mechanical Characterization of Graphene/Polymer Nanocomposites using Atomic Force Microscopy

    NASA Astrophysics Data System (ADS)

    Cai, Minzhen

    Graphene materials, exhibiting outstanding mechanical properties, are excellent candidates as reinforcement in high-performance polymer nanocomposites. In this dissertation, advanced atomic force microscopy (AFM) techniques are applied to study the nanomechanics of graphene/polymer nanocomposites, specifically the graphene/polymer interfacial strength and the stress transfer at the interface. Two novel methods to directly characterize the interfacial strength between individual graphene sheets and polymers using AFM are presented and applied to a series of polymers and graphene sheets. The interfacial strength of graphene/polymer varies greatly for different combinations. The strongest interaction is found between graphene oxide (GO) and polyvinyl alcohol (PVA), a strongly polar, water-based polymer. On the other hand, polystyrene, a non polar polymer, has the weakest interaction with GO. The interfacial bond strength is attributed to hydrogen bonding and physical adsorption. Further, the stress transfer in GO/PVA nanocomposites is studied quantitatively by monitoring the strain in individual GO sheet inside the polymer via AFM and Raman spectroscopy. For the first time, the strains of individual GO sheets in nanocomposites are imaged and quantified as a function of the applied external strains. The matrix strain is directly transferred to GO sheets for strains up to 8%. At higher strain levels, the onset of the nanocomposite failure and a stick-slip behavior is observed. This study reveals that GO is superior to pure graphene as reinforcement in nanocomposites. These results also imply the potential to make a new generation of nanocomposites with exceptional high strength and toughness. In the second part of this dissertation, AFM is used to study the structure of silk proteins and the morphology of spider silks. For the first time, shear-induced self-assembly of native silk fibroin is observed. The morphology of the Brown Recluse spider silk is investigated and a

  4. Giant edge state splitting at atomically precise graphene zigzag edges

    PubMed Central

    Wang, Shiyong; Talirz, Leopold; Pignedoli, Carlo A.; Feng, Xinliang; Müllen, Klaus; Fasel, Roman; Ruffieux, Pascal

    2016-01-01

    Zigzag edges of graphene nanostructures host localized electronic states that are predicted to be spin-polarized. However, these edge states are highly susceptible to edge roughness and interaction with a supporting substrate, complicating the study of their intrinsic electronic and magnetic structure. Here, we focus on atomically precise graphene nanoribbons whose two short zigzag edges host exactly one localized electron each. Using the tip of a scanning tunnelling microscope, the graphene nanoribbons are transferred from the metallic growth substrate onto insulating islands of NaCl in order to decouple their electronic structure from the metal. The absence of charge transfer and hybridization with the substrate is confirmed by scanning tunnelling spectroscopy, which reveals a pair of occupied/unoccupied edge states. Their large energy splitting of 1.9 eV is in accordance with ab initio many-body perturbation theory calculations and reflects the dominant role of electron–electron interactions in these localized states. PMID:27181701

  5. Giant edge state splitting at atomically precise graphene zigzag edges.

    PubMed

    Wang, Shiyong; Talirz, Leopold; Pignedoli, Carlo A; Feng, Xinliang; Müllen, Klaus; Fasel, Roman; Ruffieux, Pascal

    2016-05-16

    Zigzag edges of graphene nanostructures host localized electronic states that are predicted to be spin-polarized. However, these edge states are highly susceptible to edge roughness and interaction with a supporting substrate, complicating the study of their intrinsic electronic and magnetic structure. Here, we focus on atomically precise graphene nanoribbons whose two short zigzag edges host exactly one localized electron each. Using the tip of a scanning tunnelling microscope, the graphene nanoribbons are transferred from the metallic growth substrate onto insulating islands of NaCl in order to decouple their electronic structure from the metal. The absence of charge transfer and hybridization with the substrate is confirmed by scanning tunnelling spectroscopy, which reveals a pair of occupied/unoccupied edge states. Their large energy splitting of 1.9 eV is in accordance with ab initio many-body perturbation theory calculations and reflects the dominant role of electron-electron interactions in these localized states.

  6. Layer Number Dependence of Li(+) Intercalation on Few-Layer Graphene and Electrochemical Imaging of Its Solid-Electrolyte Interphase Evolution.

    PubMed

    Hui, Jingshu; Burgess, Mark; Zhang, Jiarui; Rodríguez-López, Joaquín

    2016-04-26

    A fundamental question facing electrodes made out of few layers of graphene (FLG) is if they display chemical properties that are different to their bulk graphite counterpart. Here, we show evidence that suggests that lithium ion intercalation on FLG, as measured via stationary voltammetry, shows a strong dependence on the number of layers of graphene that compose the electrode. Despite its extreme thinness and turbostratic structure, Li ion intercalation into FLG still proceeds through a staging process, albeit with different signatures than bulk graphite or multilayer graphene. Single-layer graphene does not show any evidence of ion intercalation, while FLG with four graphene layers displays limited staging peaks, which broaden and increase in number as the layer number increases to six. Despite these mechanistic differences on ion intercalation, the formation of a solid-electrolyte interphase (SEI) was observed on all electrodes. Scanning electrochemical microscopy (SECM) in the feedback mode was used to demonstrate changes in the surface conductivity of FLG during SEI evolution. Observation of ion intercalation on large area FLG was conditioned to the fabrication of "ionic channels" on the electrode. SECM measurements using a recently developed Li-ion sensitive imaging technique evidenced the role of these channels in enabling Li-ion intercalation through localized flux measurements. This work highlights the impact of nanostructure and microstructure on macroscopic electrochemical behavior and provides guidance to the mechanistic control of ion intercalation using graphene, an atomically thin interface where surface and bulk reactivity converge. PMID:26943950

  7. Layered Atom Arrangements in Complex Materials

    SciTech Connect

    K.E. Sikafus; R.W.Grimes; S.M.Corish; A.R. Cleave; M.Tang; C.R.Stanek; B.P. Uberuaga; J.A.Valdez

    2005-04-15

    In this report, we develop an atom layer stacking model to describe systematically the crystal structures of complex materials. To illustrate the concepts, we consider a sequence of oxide compounds in which the metal cations progress in oxidation state from monovalent (M{sup 1+}) to tetravalent (M{sup 4+}). We use concepts relating to geometric subdivisions of a triangular atom net to describe the layered atom patterns in these compounds (concepts originally proposed by Shuichi Iida). We demonstrate that as a function of increasing oxidation state (from M{sup 1+} to M{sup 4+}), the layer stacking motifs used to generate each successive structure (specifically, motifs along a 3 symmetry axis), progress through the following sequence: MMO, MO, M{sub r}O, MO{sub r/s}O{sub u/v}, MOO (where M and O represent fully dense triangular atom nets and r/s and u/v are fractions used to describe partially filled triangular atom nets). We also develop complete crystallographic descriptions for the compounds in our oxidation sequence using trigonal space group R{bar 3}.

  8. Functionalization of graphene and few-layer graphene with aqueous solution of hydrofluoric acid

    NASA Astrophysics Data System (ADS)

    Nebogatikova, N. A.; Antonova, I. V.; Volodin, V. A.; Prinz, V. Ya.

    2013-08-01

    In the present study, conditions suitable for efficient modification of graphene and few-layer graphene (FLG) films with aqueous solutions of hydrofluoric acid (HF) and for local protection of the graphene against such modification in isopropyl alcohol were identified. A combination of the two treatments gives one a key to nanodesign of graphene-based 2D devices. It was found that a few-minute treatment of graphene or FLG in HF aqueous solutions (∼1 min for graphene and ∼5 min for FLG films about 5 nm thick) leads to strong changes in the structural and electrical properties of graphene involving a step-like increase in resistivity (up to 1011 Ω/□). Two types of materials were obtained after different times of treatment: (i) promising for electronic applications of the material due to a combination of high carrier mobility, high conductivity, and strong current modulation by gate voltage (up to four orders of magnitude); (ii) a material with insulating properties and graphene quantum dots embedded in an insulating matrix.

  9. Broadband single-layered graphene absorber using periodic arrays of graphene ribbons with gradient width

    NASA Astrophysics Data System (ADS)

    Zhihong, Zhu; Chucai, Guo; Jianfa, Zhang; Ken, Liu; Xiaodong, Yuan; Shiqiao, Qin

    2015-01-01

    We demonstrate that a broadband single-layered graphene absorber can be obtained in the THz range using periodic arrays of chemically doped graphene ribbons with gradient width, supported on a dielectric film placed on a thick piece of metal. The working bandwidth of 90% absorption for this structure is as high as 1.3 THz with a central frequency of 3 THz. The broadband operation mechanism is a result of the varying continuous plasmon resonances occurring in graphene ribbons with gradient width. The operation wavelength can be expanded to the far-infrared range.

  10. Selective nano-patterning of graphene using a heated atomic force microscope tip

    SciTech Connect

    Choi, Young-Soo; Wu, Xuan; Lee, Dong-Weon

    2014-04-15

    In this study, we introduce a selective thermochemical nano-patterning method of graphene on insulating substrates. A tiny heater formed at the end of an atomic force microscope (AFM) cantilever is optimized by a finite element method. The cantilever device is fabricated using conventional micromachining processes. After preliminary tests of the cantilever device, nano-patterning experiments are conducted with various conducting and insulating samples. The results indicate that faster scanning speed and higher contact force are desirable to reduce the sizes of nano-patterns. With the experimental condition of 1 μm/s and 24 mW, the heated AFM tip generates a graphene oxide layer of 3.6 nm height and 363 nm width, on a 300 nm thick SiO{sub 2} layer, with a tip contact force of 100 nN.

  11. Fingerprints of Multiple Electron Scatterings in Single-Layer Graphene

    PubMed Central

    Jung, Minbok; Sohn, So-Dam; Park, Jonghyun; Lee, Keun-U; Shin, Hyung-Joon

    2016-01-01

    The electrons in graphene exhibit unusual behaviours, which can be described by massless Dirac quasiparticles. Understanding electron scattering in graphene has been of significant importance for its future application in electronic devices because electron scattering determines electrical properties such as resistivity and electron transport. There are two types of electron scatterings in graphene: intervalley scattering and intravalley scattering. In single-layer graphene, to date, it has been difficult to observe intravalley scattering because of the suppression of backscattering resulting from the chiral nature of the electrons in graphene. Here, we report the multiple electron scattering behaviours in single-layer graphene on a metallic substrate. By applying one- and two-dimensional Fourier transforms to maps of the local density of states, we can distinguish individual scattering processes from complex interference patterns. These techniques enable us to provide direct evidence of intravalley scattering, revealing a linear dispersion relation with a Fermi velocity of ~7.4 × 105 m/s. PMID:26936521

  12. Fabrication of graphene/polyaniline composite multilayer films by electrostatic layer-by-layer assembly

    SciTech Connect

    Cong, Jiaojiao; Chen, Yuze; Luo, Jing Liu, Xiaoya

    2014-10-15

    A novel graphene/polyaniline composite multilayer film was fabricated by electrostatic interactions induced layer-by-layer self-assembly technique, using water dispersible and negatively charged chemically converted graphene (CCG) and positively charged polyaniline (PANI) as building blocks. CCG was achieved through partly reduced graphene oxide, which remained carboxyl group on its surface. The remaining carboxyl groups not only retain the dispersibility of CCG, but also allow the growth of the multilayer films via electrostatic interactions between graphene and PANI. The structure and morphology of the obtained CCG/PANI multilayer film are characterized by attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Ultraviolet–visible absorption spectrum (UV–vis), scanning electron microscopy (SEM), Raman spectroscopy and X-Ray Diffraction (XRD). The electrochemical properties of the resulting film are studied using cyclic voltammetry (CV), which showed that the resulting CCG/PANI multilayer film kept electroactivity in neutral solution and showed outstanding cyclic stability up to 100 cycles. Furthermore, the composite film exhibited good electrocatalytic ability toward ascorbic acid (AA) with a linear response from 1×10{sup −4} to 1.2×10{sup −3} M with the detect limit of 5×10{sup −6} M. This study provides a facile and effective strategy to fabricate graphene/PANI nanocomposite film with good electrochemical property, which may find potential applications in electronic devices such as electrochemical sensor. - Graphical abstract: A novel graphene/polyaniline (CCG/PANI) film was prepared by layer-by-layer assembly. - Highlights: • A novel graphene/polyaniline (CCG/PANI) film was prepared by layer-by-layer assembly. • The water dispersible and negatively charged graphene (CCG) was used as building block. • CCG was achieved through partly reduced graphene oxide with carboxyl group on its surface. • CCG/PANI film kept

  13. High quality reduced graphene oxide through repairing with multi-layered graphene ball nanostructures

    PubMed Central

    Kim, Kyoung Hwan; Yang, MinHo; Cho, Kyeong Min; Jun, Young-Si; Lee, Sang Bok; Jung, Hee-Tae

    2013-01-01

    We present a simple and up-scalable method to produce highly repaired graphene oxide with a large surface area, by introducing spherical multi-layered graphene balls with empty interiors. These graphene balls are prepared via chemical vapor deposition (CVD) of Ni particles on the surface of the graphene oxides (GO). Transmission electron microscopy and Raman spectroscopy results reveal that defects in the GO surfaces are well repaired during the CVD process, with the help of nickel nanoparticles attached to the functional groups of the GO surface, further resulting in a high electrical conductivity of 18,620 S/m. In addition, the graphene balls on the GO surface effectively prevent restacking of the GO layers, thus providing a large surface area of 527 m2/g. Two electrode supercapacitor cells using this highly conductive graphene material demonstrate ideal electrical double layer capacitive behavior, due to the effective use of the outstanding electric conductivity and the large surface area. PMID:24248235

  14. Interfacial effect on the electrochemical properties of the layered graphene/metal sulfide composites as anode materials for Li-ion batteries

    NASA Astrophysics Data System (ADS)

    Lv, Yagang; Chen, Biao; Zhao, Naiqin; Shi, Chunsheng; He, Chunnian; Li, Jiajun; Liu, Enzuo

    2016-09-01

    The layered graphene/metal sulfide composites exhibit excellent electrochemical properties as anode materials for lithium ion battery, due to the synergistic effect between metal sulfide and graphene which still needs to be further understood. In this study, Li adsorption and diffusion on MoS2 and SnS2 monolayers and Li2S surface, as well as at their interfaces with graphene, are systematically investigated through first-principles calculations. The analysis of charge density difference, Bader charge, and density of states indicates that the adsorbed Li atoms interact with both the S atoms at metal sulfide surfaces and C atoms in graphene, resulting in larger Li adsorption energies at the interfaces compared with that on the corresponding surfaces, but with almost no enhancement of the energy barriers for Li atom diffusion. The enhanced Li adsorption capability at Li2S/G interface contributes to the extra storage capacity of graphene/metal sulfide composites. Furthermore, the synergistic mechanism between metal sulfide and graphene is revealed. Moreover, band structure analysis shows the electronic conductivity is enhanced with the incorporation of graphene. The results corroborate the interfacial pseudocapacity-like Li atom storage mechanism, and are helpful for the design of layered graphene/metal sulfide composites as anode materials for lithium ion batteries.

  15. Infrared dynamics of cold atoms on hot graphene membranes

    NASA Astrophysics Data System (ADS)

    Sengupta, Sanghita; Kotov, Valeri N.; Clougherty, Dennis P.

    2016-06-01

    We study the infrared dynamics of low-energy atoms interacting with a sample of suspended graphene at finite temperature. The dynamics exhibits severe infrared divergences order by order in perturbation theory as a result of the singular nature of low-energy flexural phonon emission. Our model can be viewed as a two-channel generalization of the independent boson model with asymmetric atom-phonon coupling. This allows us to take advantage of the exact nonperturbative solution of the independent boson model in the stronger channel while treating the weaker one perturbatively. In the low-energy limit, the exact solution can be viewed as a resummation (exponentiation) of the most divergent diagrams in the perturbative expansion. As a result of this procedure, we obtain the atom's Green function which we use to calculate the atom damping rate, a quantity equal to the quantum sticking rate. A characteristic feature of our results is that the Green's function retains a weak, infrared cutoff dependence that reflects the reduced dimensionality of the problem. As a consequence, we predict a measurable dependence of the sticking rate on graphene sample size. We provide detailed predictions for the sticking rate of atomic hydrogen as a function of temperature and sample size. The resummation yields an enhanced sticking rate relative to the conventional Fermi golden rule result (equivalent to the one-loop atom self-energy), as higher-order processes increase damping at finite temperature.

  16. Tribological characteristics of few-layer graphene over Ni grain and interface boundaries

    NASA Astrophysics Data System (ADS)

    Tripathi, Manoj; Awaja, Firas; Paolicelli, Guido; Bartali, Ruben; Iacob, Erica; Valeri, Sergio; Ryu, Seunghwa; Signetti, Stefano; Speranza, Giorgio; Pugno, Nicola Maria

    2016-03-01

    The tribological properties of metal-supported few-layered graphene depend strongly on the grain topology of the metal substrate. Inhomogeneous distribution of graphene layers at such regions led to variable landscapes with distinguishable roughness. This discrepancy in morphology significantly affects the frictional and wetting characteristics of the FLG system. We discretely measured friction characteristics of FLG covering grains and interfacial grain boundaries of polycrystalline Ni metal substrate via an atomic force microscopy (AFM) probe. The friction coefficient of FLG covered at interfacial grain boundaries is found to be lower than that on grains in vacuum (at 10-5 Torr pressure) and similar results were obtained in air condition. Sliding history with AFM cantilever, static and dynamic pull-in and pull-off adhesion forces were addressed in the course of friction measurements to explain the role of the out-of-plane deformation of graphene layer(s). Finite element simulations showed good agreement with experiments and led to a rationalization of the observations. Thus, with interfacial grain boundaries the FLG tribology can be effectively tuned.The tribological properties of metal-supported few-layered graphene depend strongly on the grain topology of the metal substrate. Inhomogeneous distribution of graphene layers at such regions led to variable landscapes with distinguishable roughness. This discrepancy in morphology significantly affects the frictional and wetting characteristics of the FLG system. We discretely measured friction characteristics of FLG covering grains and interfacial grain boundaries of polycrystalline Ni metal substrate via an atomic force microscopy (AFM) probe. The friction coefficient of FLG covered at interfacial grain boundaries is found to be lower than that on grains in vacuum (at 10-5 Torr pressure) and similar results were obtained in air condition. Sliding history with AFM cantilever, static and dynamic pull-in and pull

  17. AA-stacked bilayer square ice between graphene layers

    NASA Astrophysics Data System (ADS)

    Sobrino Fernandez Mario, M.; Neek-Amal, M.; Peeters, F. M.

    2015-12-01

    Water confined between two graphene layers with a separation of a few Å forms a layered two-dimensional ice structure. Using large scale molecular dynamics simulations with the adoptable ReaxFF interatomic potential we found that flat monolayer ice with a rhombic-square structure nucleates between the graphene layers which is nonpolar and nonferroelectric. We provide different energetic considerations and H-bonding results that explain the interlayer and intralayer properties of two-dimensional ice. The controversial AA stacking found experimentally [Algara-Siller et al., Nature (London) 519, 443 (2015), 10.1038/nature14295] is consistent with our minimum-energy crystal structure of bilayer ice. Furthermore, we predict that an odd number of layers of ice has the same lattice structure as monolayer ice, while an even number of ice layers exhibits the square ice AA stacking of bilayer ice.

  18. Organometallic complexes of graphene: toward atomic spintronics using a graphene web.

    PubMed

    Avdoshenko, Stas M; Ioffe, Ilya N; Cuniberti, Gianaurelio; Dunsch, Lothar; Popov, Alexey A

    2011-12-27

    Graphene|metal|ligand systems open a new realm in surface magnetochemistry. We show that by trapping metal atoms in the two-dimensional potential lattice of a graphene-ligand interface it is possible to build a chemical analogue of an optical lattice, a key setup in quantum information and strongly correlated systems. Employing sophisticated first-principles calculations, we studied electronic and dynamic properties of graphene|metal|ligand assemblies and showed that there is a general principle--spin-charge separation in π-d systems--that underlies the possibility of synthesizing and controlling such systems. We find that ligands can work as a local gate to control the properties of trapped metal atoms and can impose bosonic or fermionic character on such atomic nets, depending on the ligand's nature. Remarkably, the magnetization energy in such systems reaches record-high values of ca. 400 meV, which makes the respective magnetic phenomena utilizable at room temperature. Accompanied by spin polarization of the graphene π-conjugated system it leads to spin-valve materials and brings the realization of quantum computing one step closer.

  19. Graphene-layered steps and their fields visualized by 4D electron microscopy

    PubMed Central

    Park, Sang Tae; Yurtsever, Aycan; Baskin, John Spencer; Zewail, Ahmed H.

    2013-01-01

    Enhanced image contrast has been seen at graphene-layered steps a few nanometers in height by means of photon-induced near-field electron microscopy (PINEM) using synchronous femtosecond pulses of light and electrons. The observed steps are formed by the edges of graphene strips lying on the surface of a graphene substrate, where the strips are hundreds of nanometers in width and many micrometers in length. PINEM measurements reflect the interaction of imaging electrons and induced (near) electric fields at the steps, and this leads to a much higher contrast than that achieved in bright-field transmission electron microscopy imaging of the same strips. Theory and numerical simulations support the experimental PINEM findings and elucidate the nature of the electric field at the steps formed by the graphene layers. These results extend the range of applications of the experimental PINEM methodology, which has previously been demonstrated for spherical, cylindrical, and triangular nanostructures, to shapes of high aspect ratio (rectangular strips), as well as into the regime of atomic layer thicknesses. PMID:23690572

  20. Local, global, and nonlinear screening in twisted double-layer graphene

    NASA Astrophysics Data System (ADS)

    Lu, Chih-Pin; Rodriguez-Vega, Martin; Li, Guohong; Luican-Mayer, Adina; Watanabe, Kenji; Taniguchi, Takashi; Rossi, Enrico; Andrei, Eva Y.

    2016-06-01

    One-atom-thick crystalline layers and their vertical heterostructures carry the promise of designer electronic materials that are unattainable by standard growth techniques. To realize their potential it is necessary to isolate them from environmental disturbances, in particular those introduced by the substrate. However, finding and characterizing suitable substrates, and minimizing the random potential fluctuations they introduce, has been a persistent challenge in this emerging field. Here we show that Landau-level (LL) spectroscopy offers the unique capability to quantify both the reduction of the quasiparticles’ lifetime and the long-range inhomogeneity due to random potential fluctuations. Harnessing this technique together with direct scanning tunneling microscopy and numerical simulations we demonstrate that the insertion of a graphene buffer layer with a large twist angle is a very effective method to shield a 2D system from substrate interference that has the additional desirable property of preserving the electronic structure of the system under study. We further show that owing to its remarkable nonlinear screening capability a single graphene buffer layer provides better shielding than either increasing the distance to the substrate or doubling the carrier density and reduces the amplitude of the potential fluctuations in graphene to values even lower than the ones in AB-stacked bilayer graphene.

  1. Layer-by-layer evolution of structure, strain, and activity for the oxygen evolution reaction in graphene-templated Pt monolayers.

    PubMed

    Abdelhafiz, Ali; Vitale, Adam; Joiner, Corey; Vogel, Eric; Alamgir, Faisal M

    2015-03-25

    In this study, we explore the dimensional aspect of structure-driven surface properties of metal monolayers grown on a graphene/Au template. Here, surface limited redox replacement (SLRR) is used to provide precise layer-by-layer growth of Pt monolayers on graphene. We find that after a few iterations of SLRR, fully wetted 4-5 monolayer Pt films can be grown on graphene. Incorporating graphene at the Pt-Au interface modifies the growth mechanism, charge transfers, equilibrium interatomic distances, and associated strain of the synthesized Pt monolayers. We find that a single layer of sandwiched graphene is able to induce a 3.5% compressive strain on the Pt adlayer grown on it, and as a result, catalytic activity is increased due to a greater areal density of the Pt layers beyond face-centered-cubic close packing. At the same time, the sandwiched graphene does not obstruct vicinity effects of near-surface electron exchange between the substrate Au and adlayers Pt. X-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure (EXAFS) techniques are used to examine charge mediation across the Pt-graphene-Au junction and the local atomic arrangement as a function of the Pt adlayer dimension. Cyclic voltammetry (CV) and the oxygen reduction reaction (ORR) are used as probes to examine the electrochemically active area of Pt monolayers and catalyst activity, respectively. Results show that the inserted graphene monolayer results in increased activity for the Pt due to a graphene-induced compressive strain, as well as a higher resistance against loss of the catalytically active Pt surface.

  2. Atomic layer deposition of nanoporous biomaterials.

    SciTech Connect

    Narayan, R. J.; Adiga, S. P.; Pellin, M. J.; Curtiss, L. A.; Stafslien, S.; Chisholm, B.; Monteiro-Riviere, N. A.; Brigmon, R. L.; Elam, J. W.; Univ. of North Carolina; North Carolina State Univ.; Eastman Kodak Co.; North Dakota State Univ.; SRL

    2010-03-01

    Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials. Nanoporous alumina, also known as anodic aluminum oxide (AAO), is a nanomaterial that exhibits several unusual properties, including high pore densities, straight pores, small pore sizes, and uniform pore sizes. In 1953, Keller et al. showed that anodizing aluminum in acid electrolytes results in a thick layer of nearly cylindrical pores, which are arranged in a close-packed hexagonal cell structure. More recently, Matsuda & Fukuda demonstrated preparation of highly ordered platinum and gold nanohole arrays using a replication process. In this study, a negative structure of nanoporous alumina was initially fabricated and a positive structure of a nanoporous metal was subsequently fabricated. Over the past fifteen years, nanoporous alumina membranes have been used as templates for growth of a variety of nanostructured materials, including nanotubes, nanowires, nanorods, and nanoporous membranes.

  3. A graphene superficial layer for the advanced electroforming process

    NASA Astrophysics Data System (ADS)

    Rho, Hokyun; Park, Mina; Lee, Seungmin; Bae, Sukang; Kim, Tae-Wook; Ha, Jun-Seok; Lee, Sang Hyun

    2016-06-01

    Advances in electroplating technology facilitate the progress of modern electronic devices, including computers, microprocessors and other microelectronic devices. Metal layers with high electrical and thermal conductivities are essential for high speed and high power devices. In this paper, we report an effective route to fabricate free-standing metal films using graphene as a superficial layer in the electroforming process. Chemical vapor deposition (CVD) graphene grown on a Cu foil was used as a template, which provides high electrical conductivity and low adhesive force with the template, thus enabling an effective electroforming process. The required force for delamination of the electroplated Cu layer from graphene is more than one order smaller than the force required for removing graphene from the Cu foil. We also demonstrated that the electroformed free-standing Cu thin films could be utilized for patterning microstructures and incorporated onto a flexible substrate for LEDs. This innovative process could be beneficial for the advancement of flexible electronics and optoelectronics, which require a wide range of mechanical and physical properties.Advances in electroplating technology facilitate the progress of modern electronic devices, including computers, microprocessors and other microelectronic devices. Metal layers with high electrical and thermal conductivities are essential for high speed and high power devices. In this paper, we report an effective route to fabricate free-standing metal films using graphene as a superficial layer in the electroforming process. Chemical vapor deposition (CVD) graphene grown on a Cu foil was used as a template, which provides high electrical conductivity and low adhesive force with the template, thus enabling an effective electroforming process. The required force for delamination of the electroplated Cu layer from graphene is more than one order smaller than the force required for removing graphene from the Cu foil

  4. Mode dependent lattice thermal conductivity of single layer graphene

    SciTech Connect

    Wei, Zhiyong; Yang, Juekuan; Bi, Kedong; Chen, Yunfei

    2014-10-21

    Molecular dynamics simulation is performed to extract the phonon dispersion and phonon lifetime of single layer graphene. The mode dependent thermal conductivity is calculated from the phonon kinetic theory. The predicted thermal conductivity at room temperature exhibits important quantum effects due to the high Debye temperature of graphene. But the quantum effects are reduced significantly when the simulated temperature is as high as 1000 K. Our calculations show that out-of-plane modes contribute about 41.1% to the total thermal conductivity at room temperature. The relative contribution of out-of-plane modes has a little decrease with the increase of temperature. Contact with substrate can reduce both the total thermal conductivity of graphene and the relative contribution of out-of-plane modes, in agreement with previous experiments and theories. Increasing the coupling strength between graphene and substrate can further reduce the relative contribution of out-of-plane modes. The present investigations also show that the relative contribution of different mode phonons is not sensitive to the grain size of graphene. The obtained phonon relaxation time provides useful insight for understanding the phonon mean free path and the size effects in graphene.

  5. Electron transport in molecular junctions with graphene as protecting layer

    SciTech Connect

    Hüser, Falco; Solomon, Gemma C.

    2015-12-07

    We present ab initio transport calculations for molecular junctions that include graphene as a protecting layer between a single molecule and gold electrodes. This vertical setup has recently gained significant interest in experiment for the design of particularly stable and reproducible devices. We observe that the signals from the molecule in the electronic transmission are overlayed by the signatures of the graphene sheet, thus raising the need for a reinterpretation of the transmission. On the other hand, we see that our results are stable with respect to various defects in the graphene. For weakly physiosorbed molecules, no signs of interaction with the graphene are evident, so the transport properties are determined by offresonant tunnelling between the gold leads across an extended structure that includes the molecule itself and the additional graphene layer. Compared with pure gold electrodes, calculated conductances are about one order of magnitude lower due to the increased tunnelling distance. Relative differences upon changing the end group and the length of the molecule on the other hand, are similar.

  6. Electron transport in molecular junctions with graphene as protecting layer

    NASA Astrophysics Data System (ADS)

    Hüser, Falco; Solomon, Gemma C.

    2015-12-01

    We present ab initio transport calculations for molecular junctions that include graphene as a protecting layer between a single molecule and gold electrodes. This vertical setup has recently gained significant interest in experiment for the design of particularly stable and reproducible devices. We observe that the signals from the molecule in the electronic transmission are overlayed by the signatures of the graphene sheet, thus raising the need for a reinterpretation of the transmission. On the other hand, we see that our results are stable with respect to various defects in the graphene. For weakly physiosorbed molecules, no signs of interaction with the graphene are evident, so the transport properties are determined by offresonant tunnelling between the gold leads across an extended structure that includes the molecule itself and the additional graphene layer. Compared with pure gold electrodes, calculated conductances are about one order of magnitude lower due to the increased tunnelling distance. Relative differences upon changing the end group and the length of the molecule on the other hand, are similar.

  7. Precise Control of the Number of Layers of Graphene by Picosecond Laser Thinning.

    PubMed

    Lin, Zhe; Ye, Xiaohui; Han, Jinpeng; Chen, Qiao; Fan, Peixun; Zhang, Hongjun; Xie, Dan; Zhu, Hongwei; Zhong, Minlin

    2015-06-26

    The properties of graphene can vary as a function of the number of layers (NOL). Controlling the NOL in large area graphene is still challenging. In this work, we demonstrate a picosecond (ps) laser thinning removal of graphene layers from multi-layered graphene to obtain desired NOL when appropriate pulse threshold energy is adopted. The thinning process is conducted in atmosphere without any coating and it is applicable for graphene films on arbitrary substrates. This method provides many advantages such as one-step process, non-contact operation, substrate and environment-friendly, and patternable, which will enable its potential applications in the manufacturing of graphene-based electronic devices.

  8. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    DOEpatents

    Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2015-04-28

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  9. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    SciTech Connect

    Liu, Jun; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2014-09-16

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  10. Self assembled multi-layer nanocomposite of graphene and metal oxide materials

    SciTech Connect

    Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

    2013-10-22

    Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

  11. Atomic Scale Imaging of the Electronic Structure and Chemistry of Graphene and Its Precursors on Metal Surfaces

    SciTech Connect

    Flynn, George W

    2015-02-16

    atom, provides information about the electronic structure of graphene and is particularly sensitive to the sign and magnitude of the charge transfer between graphene and any surface adsorbed species. Results: (A) Graphene on SiO2 In an effort designed to unravel aspects of the mechanisms for chemistry on graphene surfaces, STM and STS were employed to show that graphene on SiO2 is oxidized at lower temperatures than either graphite or multi-layer graphene. Two independent factors control this charge transfer: (1) the degree of graphene coupling to the substrate, and (2) exposure to oxygen and moisture. (B) Graphene on Copper In the case of graphene grown on copper surfaces, we found that the graphene grows primarily in registry with the underlying copper lattice for both Cu(111) and Cu(100). On Cu(111) the graphene has a hexagonal superstructure with a significant electronic component, whereas it has a linear superstructure on Cu(100). (C) Nitrogen Doped Graphene on Copper Using STM we have also studied the electronic structure and morphology of graphene films grown on a copper foil substrate in which N atoms substitute for carbon in the 2-D graphene lattice. The salient features of the results of this study were: (1) Nitrogen doped graphene on Cu foil exhibits a triangular structure with an “apparent” slight elevation of ~ 0.8 Å at N atom substitution sites; (2) Nitrogen doping results in ~0.4 electrons per N atom donated to the graphene lattice; (3) Typical N doping of graphene on Cu foil shows mostly single site Carbon atom displacement (~ 3N/1000C); (4) Some multi-site C atom displacement is observed (<10% of single site events). (D) Boron Doped Graphene on Copper We also used scanning tunneling microscopy and x-ray spectroscopy to characterize the atomic and electronic structure of boron-doped graphene created by chemical vapor deposition on copper substrates. Microscopic measurements show that boron, like nitrogen, incorporates into the carbon lattice

  12. Adsorption of two sodium atoms on graphene -- A first principles study

    SciTech Connect

    Kaur, Gagandeep; Rani, Babita; Gupta, Shuchi; Dharamvir, Keya

    2015-08-28

    We perform a systematic density functional theory (DFT) study of the adsorption of two sodium atoms on graphene using the SIESTA package, in the generalized gradient approximation (GGA). The adsorption energy, geometry, magnetic moment and charge transfer of the Na{sub n}-graphene (n=1, 2) system are calculated. Three initial horizontal orientations of the pair of sodium atoms on graphene are studied. Our calculations reveal that sodium atoms bind weakly to the graphene surface which is in agreement with previous results. We also notice a charge transfer of 0.288e from a sodium adatom to the graphene sheet altering its magnetic moment (−0.318 µ{sub B}) that is reduced from the gas phase value of the isolated atom (1 µ{sub B}). The calculated adsorption energies suggest that clustering of Na atoms on graphene is energetically favorable.

  13. One-step transfer and integration of multifunctionality in CVD graphene by TiO₂/graphene oxide hybrid layer.

    PubMed

    Jeong, Hee Jin; Kim, Ho Young; Jeong, Hyun; Han, Joong Tark; Jeong, Seung Yol; Baeg, Kang-Jun; Jeong, Mun Seok; Lee, Geon-Woong

    2014-05-28

    We present a straightforward method for simultaneously enhancing the electrical conductivity, environmental stability, and photocatalytic properties of graphene films through one-step transfer of CVD graphene and integration by introducing TiO2/graphene oxide layer. A highly durable and flexible TiO2 layer is successfully used as a supporting layer for graphene transfer instead of the commonly used PMMA. Transferred graphene/TiO2 film is directly used for measuring the carrier transport and optoelectronic properties without an extra TiO2 removal and following deposition steps for multifunctional integration into devices because the thin TiO2 layer is optically transparent and electrically semiconducting. Moreover, the TiO2 layer induces charge screening by electrostatically interacting with the residual oxygen moieties on graphene, which are charge scattering centers, resulting in a reduced current hysteresis. Adsorption of water and other chemical molecules onto the graphene surface is also prevented by the passivating TiO2 layer, resulting in the long term environmental stability of the graphene under high temperature and humidity. In addition, the graphene/TiO2 film shows effectively enhanced photocatalytic properties because of the increase in the transport efficiency of the photogenerated electrons due to the decrease in the injection barrier formed at the interface between the F-doped tin oxide and TiO2 layers. PMID:24578338

  14. Extreme ultraviolet induced defects on few-layer graphene

    NASA Astrophysics Data System (ADS)

    Gao, A.; Rizo, P. J.; Zoethout, E.; Scaccabarozzi, L.; Lee, C. J.; Banine, V.; Bijkerk, F.

    2013-07-01

    We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

  15. Tribological characteristics of few-layer graphene over Ni grain and interface boundaries.

    PubMed

    Tripathi, Manoj; Awaja, Firas; Paolicelli, Guido; Bartali, Ruben; Iacob, Erica; Valeri, Sergio; Ryu, Seunghwa; Signetti, Stefano; Speranza, Giorgio; Pugno, Nicola Maria

    2016-03-28

    The tribological properties of metal-supported few-layered graphene depend strongly on the grain topology of the metal substrate. Inhomogeneous distribution of graphene layers at such regions led to variable landscapes with distinguishable roughness. This discrepancy in morphology significantly affects the frictional and wetting characteristics of the FLG system. We discretely measured friction characteristics of FLG covering grains and interfacial grain boundaries of polycrystalline Ni metal substrate via an atomic force microscopy (AFM) probe. The friction coefficient of FLG covered at interfacial grain boundaries is found to be lower than that on grains in vacuum (at 10(-5) Torr pressure) and similar results were obtained in air condition. Sliding history with AFM cantilever, static and dynamic pull-in and pull-off adhesion forces were addressed in the course of friction measurements to explain the role of the out-of-plane deformation of graphene layer(s). Finite element simulations showed good agreement with experiments and led to a rationalization of the observations. Thus, with interfacial grain boundaries the FLG tribology can be effectively tuned. PMID:26948836

  16. Spatially Resolved Electronic Structures of Atomically Precise Armchair Graphene Nanoribbons

    PubMed Central

    Huang, Han; Wei, Dacheng; Sun, Jiatao; Wong, Swee Liang; Feng, Yuan Ping; Neto, A. H. Castro; Wee, Andrew Thye Shen

    2012-01-01

    Graphene has attracted much interest in both academia and industry. The challenge of making it semiconducting is crucial for applications in electronic devices. A promising approach is to reduce its physical size down to the nanometer scale. Here, we present the surface-assisted bottom-up fabrication of atomically precise armchair graphene nanoribbons (AGNRs) with predefined widths, namely 7-, 14- and 21-AGNRs, on Ag(111) as well as their spatially resolved width-dependent electronic structures. STM/STS measurements reveal their associated electron scattering patterns and the energy gaps over 1 eV. The mechanism to form such AGNRs is addressed based on the observed intermediate products. Our results provide new insights into the local properties of AGNRs, and have implications for the understanding of their electrical properties and potential applications. PMID:23248746

  17. Spatially Resolved Electronic Structures of Atomically Precise Armchair Graphene Nanoribbons

    NASA Astrophysics Data System (ADS)

    Huang, Han; Wei, Dacheng; Sun, Jiatao; Wong, Swee Liang; Feng, Yuan Ping; Neto, A. H. Castro; Wee, Andrew Thye Shen

    2012-12-01

    Graphene has attracted much interest in both academia and industry. The challenge of making it semiconducting is crucial for applications in electronic devices. A promising approach is to reduce its physical size down to the nanometer scale. Here, we present the surface-assisted bottom-up fabrication of atomically precise armchair graphene nanoribbons (AGNRs) with predefined widths, namely 7-, 14- and 21-AGNRs, on Ag(111) as well as their spatially resolved width-dependent electronic structures. STM/STS measurements reveal their associated electron scattering patterns and the energy gaps over 1 eV. The mechanism to form such AGNRs is addressed based on the observed intermediate products. Our results provide new insights into the local properties of AGNRs, and have implications for the understanding of their electrical properties and potential applications.

  18. Electrochemical double-layer capacitors based on functionalized graphene

    NASA Astrophysics Data System (ADS)

    Pope, Michael Allan

    Graphene is a promising electrode material for electrochemical double-layer capacitors (EDLCs) used for energy storage due to its high electrical conductivity and theoretical specific surface area. However, the intrinsic capacitance of graphene is known to be low and governed by the electronic side of the interface. Furthermore, graphene tends to aggregate and stack together when processed into thick electrode films. This significantly lowers the ion-accessible specific surface area (SSA). Maximizing both the SSA and the intrinsic capacitance are the main problems addressed in this thesis in an effort to improve the specific capacitance and energy density of EDLCs. In contrast to pristine graphene, functionalized graphene produced by the thermal exfoliation of graphite oxide contains residual functional groups and lattice defects. To study how these properties affect the double-layer capacitance, a model electrode system capable of measuring the intrinsic electrochemical properties of functionalized graphene was developed. To prevent artifacts and uncertainties related to measurements on porous electrodes, the functionalized graphene sheets (FGSs) were assembled as densely tiled monolayers using a Langmuir-Blodgett technique. In this way, charging can be studied in a well-defined 2D geometry. The possibility of measuring and isolating the intrinsic electrochemical properties of FGS monolayers was first demonstrated by comparing capacitance and redox probe measurements carried out on coatings deposited on passivated gold and single crystal graphite substrates. This monolayer system was then used to follow the double-layer capacitance of the FGS/electrolyte interface as the structure and chemistry of graphene was varied by thermal treatments ranging from 300 °C to 2100 °C. Elemental analysis and Raman spectroscopy were used to determine the resulting chemical and structural transformation upon heat treatment. It was demonstrated that intrinsically defective

  19. Intrinsic Negative Poisson's Ratio for Single-Layer Graphene.

    PubMed

    Jiang, Jin-Wu; Chang, Tienchong; Guo, Xingming; Park, Harold S

    2016-08-10

    Negative Poisson's ratio (NPR) materials have drawn significant interest because the enhanced toughness, shear resistance, and vibration absorption that typically are seen in auxetic materials may enable a range of novel applications. In this work, we report that single-layer graphene exhibits an intrinsic NPR, which is robust and independent of its size and temperature. The NPR arises due to the interplay between two intrinsic deformation pathways (one with positive Poisson's ratio, the other with NPR), which correspond to the bond stretching and angle bending interactions in graphene. We propose an energy-based deformation pathway criteria, which predicts that the pathway with NPR has lower energy and thus becomes the dominant deformation mode when graphene is stretched by a strain above 6%, resulting in the NPR phenomenon. PMID:27408994

  20. Atomic cobalt on nitrogen-doped graphene for hydrogen generation

    NASA Astrophysics Data System (ADS)

    Fei, Huilong; Dong, Juncai; Arellano-Jiménez, M. Josefina; Ye, Gonglan; Dong Kim, Nam; Samuel, Errol L. G.; Peng, Zhiwei; Zhu, Zhuan; Qin, Fan; Bao, Jiming; Yacaman, Miguel Jose; Ajayan, Pulickel M.; Chen, Dongliang; Tour, James M.

    2015-10-01

    Reduction of water to hydrogen through electrocatalysis holds great promise for clean energy, but its large-scale application relies on the development of inexpensive and efficient catalysts to replace precious platinum catalysts. Here we report an electrocatalyst for hydrogen generation based on very small amounts of cobalt dispersed as individual atoms on nitrogen-doped graphene. This catalyst is robust and highly active in aqueous media with very low overpotentials (30 mV). A variety of analytical techniques and electrochemical measurements suggest that the catalytically active sites are associated with the metal centres coordinated to nitrogen. This unusual atomic constitution of supported metals is suggestive of a new approach to preparing extremely efficient single-atom catalysts.

  1. Atomic cobalt on nitrogen-doped graphene for hydrogen generation

    PubMed Central

    Fei, Huilong; Dong, Juncai; Arellano-Jiménez, M. Josefina; Ye, Gonglan; Dong Kim, Nam; Samuel, Errol L.G.; Peng, Zhiwei; Zhu, Zhuan; Qin, Fan; Bao, Jiming; Yacaman, Miguel Jose; Ajayan, Pulickel M.; Chen, Dongliang; Tour, James M.

    2015-01-01

    Reduction of water to hydrogen through electrocatalysis holds great promise for clean energy, but its large-scale application relies on the development of inexpensive and efficient catalysts to replace precious platinum catalysts. Here we report an electrocatalyst for hydrogen generation based on very small amounts of cobalt dispersed as individual atoms on nitrogen-doped graphene. This catalyst is robust and highly active in aqueous media with very low overpotentials (30 mV). A variety of analytical techniques and electrochemical measurements suggest that the catalytically active sites are associated with the metal centres coordinated to nitrogen. This unusual atomic constitution of supported metals is suggestive of a new approach to preparing extremely efficient single-atom catalysts. PMID:26487368

  2. Atomic cobalt on nitrogen-doped graphene for hydrogen generation.

    PubMed

    Fei, Huilong; Dong, Juncai; Arellano-Jiménez, M Josefina; Ye, Gonglan; Dong Kim, Nam; Samuel, Errol L G; Peng, Zhiwei; Zhu, Zhuan; Qin, Fan; Bao, Jiming; Yacaman, Miguel Jose; Ajayan, Pulickel M; Chen, Dongliang; Tour, James M

    2015-01-01

    Reduction of water to hydrogen through electrocatalysis holds great promise for clean energy, but its large-scale application relies on the development of inexpensive and efficient catalysts to replace precious platinum catalysts. Here we report an electrocatalyst for hydrogen generation based on very small amounts of cobalt dispersed as individual atoms on nitrogen-doped graphene. This catalyst is robust and highly active in aqueous media with very low overpotentials (30 mV). A variety of analytical techniques and electrochemical measurements suggest that the catalytically active sites are associated with the metal centres coordinated to nitrogen. This unusual atomic constitution of supported metals is suggestive of a new approach to preparing extremely efficient single-atom catalysts. PMID:26487368

  3. Effect of the intra-layer potential distributions and spatial currents on the performance of graphene SymFETs

    SciTech Connect

    Hasan, Mehdi; Sensale-Rodriguez, Berardi

    2015-09-15

    In this paper, a two-dimensional (2-D) model for a graphene symmetric field effect transistor (SymFET), which considers (a) the intra-graphene layer potential distributions and (b) the internal current flows through the device, is presented and discussed. The local voltages along the graphene electrodes as well as the current-voltage characteristics of the device are numerically calculated based on a single-particle tunneling model. Our numerical results show that: (i) when the tunneling current is small, due to either a large tunneling thickness (≥ 2 atomic layers of BN) or a small coherence length, the voltage distributions along the graphene electrodes have almost zero variations upon including these distributed effects, (ii) when the tunnel current is large, due to either a small tunneling thickness (∼ 1 atomic layer of BN) or due to a large coherence length, the local voltage distributions along the graphene electrodes become appreciable and the device behavior deviates from that predicted by a 1-D approximation. These effects, which are not captured in one-dimensional SymFET models, can provide a better understanding about the electron dynamics in the device and might indicate potential novel applications for this proposed device.

  4. Single-Layer Graphene as a Barrier Layer for Intense UV Laser-Induced Damages for Silver Nanowire Network.

    PubMed

    Das, Suprem R; Nian, Qiong; Saei, Mojib; Jin, Shengyu; Back, Doosan; Kumar, Prashant; Janes, David B; Alam, Muhammad A; Cheng, Gary J

    2015-11-24

    Single-layer graphene (SLG) has been proposed as the thinnest protective/barrier layer for wide applications involving resistance to oxidation, corrosion, atomic/molecular diffusion, electromagnetic interference, and bacterial contamination. Functional metallic nanostructures have lower thermal stability than their bulk forms and are therefore susceptible to high energy photons. Here, we demonstrate that SLG can shield metallic nanostructures from intense laser radiation that would otherwise ablate them. By irradiation via a UV laser beam with nanosecond pulse width and a range of laser intensities (in millions of watt per cm(2)) onto a silver nanowire network, and conformally wrapping SLG on top of the nanowire network, we demonstrate that graphene "extracts and spreads" most of the thermal energy away from nanowire, thereby keeping it damage-free. Without graphene wrapping, the radiation would fragment the wires into smaller pieces and even decompose them into droplets. A systematic molecular dynamics simulation confirms the mechanism of SLG shielding. Consequently, particular damage-free and ablation-free laser-based nanomanufacturing of hybrid nanostructures might be sparked off by application of SLG on functional surfaces and nanofeatures. PMID:26447828

  5. Short-range ordering of ion-implanted nitrogen atoms in SiC-graphene

    SciTech Connect

    Willke, P.; Druga, T.; Wenderoth, M.; Amani, J. A.; Weikert, S.; Hofsäss, H.; Thakur, S.; Maiti, K.

    2014-09-15

    We perform a structural analysis of nitrogen-doped graphene on SiC(0001) prepared by ultra low-energy ion bombardment. Using scanning tunneling microscopy, we show that nitrogen atoms are incorporated almost exclusively as graphitic substitution in the graphene honeycomb lattice. With an irradiation energy of 25 eV and a fluence of approximately 5 × 10{sup 14 }cm{sup −2}, we achieve a nitrogen content of around 1%. By quantitatively comparing the position of the N-atoms in the topography measurements with simulated random distributions, we find statistically significant short-range correlations. Consequently, we are able to show that the dopants arrange preferably at lattice sites given by the 6 × 6-reconstruction of the underlying substrate. This selective incorporation is most likely triggered by adsorbate layers present during the ion bombardment. This study identifies low-energy ion irradiation as a promising method for controlled doping in epitaxial graphene.

  6. Tunable electronic properties of graphene through controlling bonding configurations of doped nitrogen atoms

    NASA Astrophysics Data System (ADS)

    Zhang, Jia; Zhao, Chao; Liu, Na; Zhang, Huanxi; Liu, Jingjing; Fu, Yong Qing; Guo, Bin; Wang, Zhenlong; Lei, Shengbin; Hu, Pingan

    2016-06-01

    Single–layer and mono–component doped graphene is a crucial platform for a better understanding of the relationship between its intrinsic electronic properties and atomic bonding configurations. Large–scale doped graphene films dominated with graphitic nitrogen (GG) or pyrrolic nitrogen (PG) were synthesized on Cu foils via a free radical reaction at growth temperatures of 230–300 °C and 400–600 °C, respectively. The bonding configurations of N atoms in the graphene lattices were controlled through reaction temperature, and characterized using Raman spectroscopy, X–ray photoelectron spectroscopy and scanning tunneling microscope. The GG exhibited a strong n–type doping behavior, whereas the PG showed a weak n–type doping behavior. Electron mobilities of the GG and PG were in the range of 80.1–340 cm2 V‑1·s‑1 and 59.3–160.6 cm2 V‑1·s‑1, respectively. The enhanced doping effect caused by graphitic nitrogen in the GG produced an asymmetry electron–hole transport characteristic, indicating that the long–range scattering (ionized impurities) plays an important role in determining the carrier transport behavior. Analysis of temperature dependent conductance showed that the carrier transport mechanism in the GG was thermal excitation, whereas that in the PG, was a combination of thermal excitation and variable range hopping.

  7. Tunable electronic properties of graphene through controlling bonding configurations of doped nitrogen atoms

    PubMed Central

    Zhang, Jia; Zhao, Chao; Liu, Na; Zhang, Huanxi; Liu, Jingjing; Fu, Yong Qing; Guo, Bin; Wang, Zhenlong; Lei, Shengbin; Hu, PingAn

    2016-01-01

    Single–layer and mono–component doped graphene is a crucial platform for a better understanding of the relationship between its intrinsic electronic properties and atomic bonding configurations. Large–scale doped graphene films dominated with graphitic nitrogen (GG) or pyrrolic nitrogen (PG) were synthesized on Cu foils via a free radical reaction at growth temperatures of 230–300 °C and 400–600 °C, respectively. The bonding configurations of N atoms in the graphene lattices were controlled through reaction temperature, and characterized using Raman spectroscopy, X–ray photoelectron spectroscopy and scanning tunneling microscope. The GG exhibited a strong n–type doping behavior, whereas the PG showed a weak n–type doping behavior. Electron mobilities of the GG and PG were in the range of 80.1–340 cm2 V−1·s−1 and 59.3–160.6 cm2 V−1·s−1, respectively. The enhanced doping effect caused by graphitic nitrogen in the GG produced an asymmetry electron–hole transport characteristic, indicating that the long–range scattering (ionized impurities) plays an important role in determining the carrier transport behavior. Analysis of temperature dependent conductance showed that the carrier transport mechanism in the GG was thermal excitation, whereas that in the PG, was a combination of thermal excitation and variable range hopping. PMID:27325386

  8. Quantitative atomic resolution force imaging on epitaxial graphene with reactive and nonreactive AFM probes.

    PubMed

    Boneschanscher, Mark P; van der Lit, Joost; Sun, Zhixiang; Swart, Ingmar; Liljeroth, Peter; Vanmaekelbergh, Daniël

    2012-11-27

    Atomic force microscopy (AFM) images of graphene and graphite show contrast with atomic periodicity. However, the contrast patterns vary depending on the atomic termination of the AFM tip apex and the tip-sample distance, hampering the identification of the atomic positions. Here, we report quantitative AFM imaging of epitaxial graphene using inert (carbon-monoxide-terminated) and reactive (iridium-terminated) tips. The atomic image contrast is markedly different with these tip terminations. With a reactive tip, we observe an inversion from attractive to repulsive atomic contrast with decreasing tip-sample distance, while a nonreactive tip only yields repulsive atomic contrast. We are able to identify the atoms with both tips at any tip-sample distance. This is a prerequisite for future structural and chemical analysis of adatoms, defects, and the edges of graphene nanostructures, crucial for understanding nanoscale graphene devices.

  9. Novel Infrared Dynamics of Cold Atoms on Hot Graphene

    NASA Astrophysics Data System (ADS)

    Sengupta, Sanghita; Kotov, Valeri; Clougherty, Dennis

    The low-energy dynamics of cold atoms interacting with macroscopic graphene membranes exhibits severe infrared divergences when treated perturbatively. These infrared problems are even more pronounced at finite temperature due to the (infinitely) many flexural phonons excited in graphene. We have devised a technique to take account (resummation) of such processes in the spirit of the well-known exact solution of the independent boson model. Remarkably, there is also similarity to the infrared problems and their treatment (via the Bloch-Nordsieck scheme) in finite temperature ``hot'' quantum electrodynamics and chromodynamics due to the long-range, unscreened nature of gauge interactions. The method takes into account correctly the strong damping provided by the many emitted phonons at finite temperature. In our case, the inverse membrane size plays the role of an effective low-energy scale, and, unlike the above mentioned field theories, there remains an unusual, highly nontrivial dependence on that scale due to the 2D nature of the problem. We present detailed results for the sticking (atomic damping rate) rate of cold atomic hydrogen as a function of the membrane temperature and size. We find that the rate is very strongly dependent on both quantities.

  10. Plasmons in spatially separated double-layer graphene nanoribbons

    NASA Astrophysics Data System (ADS)

    Bagheri, Mehran; Bahrami, Mousa

    2014-05-01

    Motivated by innovative progresses in designing multi-layer graphene nanostructured materials in the laboratory, we theoretically investigate the Dirac plasmon modes of a spatially separated double-layer graphene nanoribbon system, made up of a vertically offset armchair and metallic graphene nanoribbon pair. We find striking features of the collective excitations in this novel Coulomb correlated system, where both nanoribbons are supposed to be either intrinsic (undoped/ungated) or extrinsic (doped/gated). In the former, it is shown the low-energy acoustical and the high-energy optical plasmon modes are tunable only by the inter-ribbon charge separation. In the later, the aforementioned plasmon branches are modified by the added doping factor. As a result, our model could be useful to examine the existence of a linear Landau-undamped low-energy acoustical plasmon mode tuned via the inter-ribbon charge separation as well as doping. This study might also be utilized for devising novel quantum optical waveguides based on the Coulomb coupled graphene nanoribbons.

  11. Plasmons in spatially separated double-layer graphene nanoribbons

    SciTech Connect

    Bagheri, Mehran; Bahrami, Mousa

    2014-05-07

    Motivated by innovative progresses in designing multi-layer graphene nanostructured materials in the laboratory, we theoretically investigate the Dirac plasmon modes of a spatially separated double-layer graphene nanoribbon system, made up of a vertically offset armchair and metallic graphene nanoribbon pair. We find striking features of the collective excitations in this novel Coulomb correlated system, where both nanoribbons are supposed to be either intrinsic (undoped/ungated) or extrinsic (doped/gated). In the former, it is shown the low-energy acoustical and the high-energy optical plasmon modes are tunable only by the inter-ribbon charge separation. In the later, the aforementioned plasmon branches are modified by the added doping factor. As a result, our model could be useful to examine the existence of a linear Landau-undamped low-energy acoustical plasmon mode tuned via the inter-ribbon charge separation as well as doping. This study might also be utilized for devising novel quantum optical waveguides based on the Coulomb coupled graphene nanoribbons.

  12. Ruthenium / aerogel nanocomposits via Atomic Layer Deposition

    SciTech Connect

    Biener, J; Baumann, T F; Wang, Y; Nelson, E J; Kucheyev, S O; Hamza, A V; Kemell, M; Ritala, M; Leskela, M

    2006-08-28

    We present a general approach to prepare metal/aerogel nanocomposites via template directed atomic layer deposition (ALD). In particular, we used a Ru ALD process consisting of alternating exposures to bis(cyclopentadienyl)ruthenium (RuCp{sub 2}) and air at 350 C to deposit metallic Ru nanoparticles on the internal surfaces of carbon and silica aerogels. The process does not affect the morphology of the aerogel template and offers excellent control over metal loading by simply adjusting the number of ALD cycles. We also discuss the limitations of our ALD approach, and suggest ways to overcome these.

  13. Atomic Layer Deposition from Dissolved Precursors.

    PubMed

    Wu, Yanlin; Döhler, Dirk; Barr, Maïssa; Oks, Elina; Wolf, Marc; Santinacci, Lionel; Bachmann, Julien

    2015-10-14

    We establish a novel thin film deposition technique by transferring the principles of atomic layer deposition (ALD) known with gaseous precursors toward precursors dissolved in a liquid. An established ALD reaction behaves similarly when performed from solutions. "Solution ALD" (sALD) can coat deep pores in a conformal manner. sALD offers novel opportunities by overcoming the need for volatile and thermally robust precursors. We establish a MgO sALD procedure based on the hydrolysis of a Grignard reagent.

  14. Atomic Layer Deposition for SRF Cavities

    SciTech Connect

    Norem, J; Pellin, M J; Antoine, C Z; Ciovati, G; Kneisel, P; Reece, C E; Rimmer, R A; Cooley, L; Gurevich, A V; Ha, Y; Proslier, Th; Zasadzinski, J

    2009-05-01

    We have begun using Atomic Layer Deposition (ALD) to synthesize a variety of surface coatings on coupons and cavities as part of an effort to produce rf structures with significantly better performance and yield than those obtained from bulk niobium, The ALD process offers the possibility of conformally coating complex cavity shapes with precise layered structures with tightly constrained morphology and chemical properties. Our program looks both at the metallurgy and superconducting properties of these coatings, and also their performance in working structures. Initial results include: 1) evidence from point contact tunneling showing magnetic oxides can be a significant limitation to high gradient operation, 2) experimental results showing the production sharp niobium/oxide interfaces from a high temperature bake of ALD coated Al2O3 on niobium surfaces, 3) results from ALD coated structures.

  15. Atomic Layer Deposition for SRF Cavities

    SciTech Connect

    Proslier, Th.; Ha, Y.; Zasadzinski, J.; Ciovati, G.; Kneissel, P.; Reece, C.; Rimmer, R.; Gurevich, A.; Cooley, L.; Wu, G.; Pellin, M.; /Argonne

    2009-05-01

    We have begun using Atomic Layer Deposition (ALD) to synthesize a variety of surface coatings on coupons and cavities as part of an effort to produce rf structures with significantly better performance and yield than those obtained from bulk niobium, The ALD process offers the possibility of conformally coating complex cavity shapes with precise layered structures with tightly constrained morphology and chemical properties. Our program looks both at the metallurgy and superconducting properties of these coatings, and also their performance in working structures. Initial results include: (1) results from ALD coated cavities and coupons, (2) new evidence from point contact tunneling (PCT) showing magnetic oxides can be a significant limitation to high gradient operation, (3) a study of high pressure rinsing damage on niobium samples.

  16. Substrate-Independent Growth of Atomically Precise Chiral Graphene Nanoribbons.

    PubMed

    de Oteyza, Dimas G; García-Lekue, Aran; Vilas-Varela, Manuel; Merino-Díez, Néstor; Carbonell-Sanromà, Eduard; Corso, Martina; Vasseur, Guillaume; Rogero, Celia; Guitián, Enrique; Pascual, Jose Ignacio; Ortega, J Enrique; Wakayama, Yutaka; Peña, Diego

    2016-09-27

    Contributing to the need for new graphene nanoribbon (GNR) structures that can be synthesized with atomic precision, we have designed a reactant that renders chiral (3,1)-GNRs after a multistep reaction including Ullmann coupling and cyclodehydrogenation. The nanoribbon synthesis has been successfully proven on different coinage metals, and the formation process, together with the fingerprints associated with each reaction step, has been studied by combining scanning tunneling microscopy, core-level spectroscopy, and density functional calculations. In addition to the GNR's chiral edge structure, the substantial GNR lengths achieved and the low processing temperature required to complete the reaction grant this reactant extremely interesting properties for potential applications. PMID:27548516

  17. Substrate-Independent Growth of Atomically Precise Chiral Graphene Nanoribbons.

    PubMed

    de Oteyza, Dimas G; García-Lekue, Aran; Vilas-Varela, Manuel; Merino-Díez, Néstor; Carbonell-Sanromà, Eduard; Corso, Martina; Vasseur, Guillaume; Rogero, Celia; Guitián, Enrique; Pascual, Jose Ignacio; Ortega, J Enrique; Wakayama, Yutaka; Peña, Diego

    2016-09-27

    Contributing to the need for new graphene nanoribbon (GNR) structures that can be synthesized with atomic precision, we have designed a reactant that renders chiral (3,1)-GNRs after a multistep reaction including Ullmann coupling and cyclodehydrogenation. The nanoribbon synthesis has been successfully proven on different coinage metals, and the formation process, together with the fingerprints associated with each reaction step, has been studied by combining scanning tunneling microscopy, core-level spectroscopy, and density functional calculations. In addition to the GNR's chiral edge structure, the substantial GNR lengths achieved and the low processing temperature required to complete the reaction grant this reactant extremely interesting properties for potential applications.

  18. Touch stimulated pulse generation in biomimetic single-layer graphene

    NASA Astrophysics Data System (ADS)

    Sul, Onejae; Chun, Hyunsuk; Choi, Eunseok; Choi, Jungbong; Cho, Kyeongwon; Jang, Dongpyo; Chun, Sungwoo; Park, Wanjun; Lee, Seung-Beck

    2016-02-01

    Detecting variation in contact pressure is a separate sensing mode in the human somatosensory system that differs from the detection of pressure magnitude. If pressure magnitude and variation sensing can be achieved simultaneously, an advanced biomimetic tactile system that better emulates human senses may be developed. We report on a novel single-layer graphene based artificial mechanoreceptor that generates a resistance pulse as the contact stimulus passes a specific threshold pressure, mimicking the generation of action potentials in a biological fast-adapting mechanoreceptor. The electric field from a flexible membrane gate electrode placed above a graphene channel raises the Fermi level from the valence band as pressure deflects the membrane. The threshold pressure is reached when the Fermi level crosses the Dirac point in the graphene energy band, which generates a sharp peak in the measured resistance. We found that by changing the gate potential it was possible to modulate the threshold pressure and using a series of graphene channels, a train of pulses were generated during a transient pressurizing stimulus demonstrating biomimetic behaviour.Detecting variation in contact pressure is a separate sensing mode in the human somatosensory system that differs from the detection of pressure magnitude. If pressure magnitude and variation sensing can be achieved simultaneously, an advanced biomimetic tactile system that better emulates human senses may be developed. We report on a novel single-layer graphene based artificial mechanoreceptor that generates a resistance pulse as the contact stimulus passes a specific threshold pressure, mimicking the generation of action potentials in a biological fast-adapting mechanoreceptor. The electric field from a flexible membrane gate electrode placed above a graphene channel raises the Fermi level from the valence band as pressure deflects the membrane. The threshold pressure is reached when the Fermi level crosses the Dirac

  19. Energetics of a Li Atom adsorbed on B/N doped graphene with monovacancy

    NASA Astrophysics Data System (ADS)

    Rani, Babita; Jindal, V. K.; Dharamvir, Keya

    2016-08-01

    We use density functional theory (DFT) to study the adsorption properties and diffusion of Li atom across B/N-pyridinic graphene. Regardless of the dopant type, B atoms of B-pyridinic graphene lose electron density. On the other hand, N atoms (p-type dopants) have tendency to gain electron density in N-pyridinic graphene. Higher chemical reactivity and electronic conductivity of B/N-pyridinic graphene are responsible for stronger binding of Li with the substrates as compared to pristine graphene. The binding energy of Li with B/N-pyridinic graphene exceeds the cohesive energy of bulk Li, making it energetically unfavourable for Li to form clusters on these substrates. Li atom gets better adsorbed on N-pyridinic graphene due to an additional p-p hybridization of the orbitals while Li on B-pyridinic prefers the ionic bonding. Also, significant distortion of N-pyridinic graphene upon Li adsorption is a consequence of the change in bonding mechanism between Li atom and the substrate. Our results show that bonding character and hence binding energies between Li and graphene can be tuned with the help of B/N doping of monovacancy defects. Further, the sites for most stable adsorption are different for the two types of doped and defective graphene, leading to greater Li uptake capacity of B-pyridinic graphene near the defect. In addition, B-pyridinic graphene offering lower diffusion barrier, ensures better Li kinetics. Thus, B-pyridinic graphene presents itself as a better anode material for LIBs as compared to N-pyridinic graphene.

  20. Electrostatic force microscopy and electrical isolation of etched few-layer graphene nano-domains

    SciTech Connect

    Hunley, D. Patrick; Sundararajan, Abhishek; Boland, Mathias J.; Strachan, Douglas R.

    2014-12-15

    Nanostructured bi-layer graphene samples formed through catalytic etching are investigated with electrostatic force microscopy. The measurements and supporting computations show a variation in the microscopy signal for different nano-domains that are indicative of changes in capacitive coupling related to their small sizes. Abrupt capacitance variations detected across etch tracks indicates that the nano-domains have strong electrical isolation between them. Comparison of the measurements to a resistor-capacitor model indicates that the resistance between two bi-layer graphene regions separated by an approximately 10 nm wide etch track is greater than about 1×10{sup 12} Ω with a corresponding gap resistivity greater than about 3×10{sup 14} Ω⋅nm. This extremely large gap resistivity suggests that catalytic etch tracks within few-layer graphene samples are sufficient for providing electrical isolation between separate nano-domains that could permit their use in constructing atomically thin nanogap electrodes, interconnects, and nanoribbons.

  1. Self-organized arrays of graphene and few-layer graphene quantum dots in fluorographene matrix: Charge transient spectroscopy

    SciTech Connect

    Antonova, Irina V.; Nebogatikova, Nadezhda A.; Prinz, Victor Ya.

    2014-05-12

    Arrays of graphene or few-layer graphene quantum dots (QDs) embedded in a partially fluorinated graphene matrix were created by chemical functionalization of layers. Charge transient spectroscopy employed for investigation of obtained QD systems (size 20–70 nm) has allowed us to examine the QD energy spectra and the time of carrier emission (or charge relaxation) from QDs as a function of film thickness. It was found that the characteristic time of carrier emission from QDs decreased markedly (by about four orders of magnitude) on increasing the QD thickness from one graphene monolayer to 3 nm. Daylight-assisted measurements also demonstrate a strong decrease of the carrier emission time.

  2. Low-energy phase change memory with graphene confined layer

    NASA Astrophysics Data System (ADS)

    Zhu, Chengqiu; Ma, Jun; Ge, Xiaoming; Rao, Feng; Ding, Keyuan; Lv, Shilong; Wu, Liangcai; Song, Zhitang

    2016-06-01

    How to reduce the Reset operation energy is the key scientific and technological problem in the field of phase change memory (PCM). Here, we show in the Ge2Sb2Te5 based PCM cell, inserting an additional graphene monolayer in the Ge2Sb2Te5 layer can remarkably decrease both the Reset current and energy. Because of the small out-of-plane electrical and thermal conductivities of such monolayer graphene, the Set resistance and the heat dissipation towards top TiN electrode of the modified PCM cell are significantly increased and decreased, respectively. The mushroom-typed larger active phase transition volume thus can be confined inside the underlying thinner GST layer, resulting in the lower power consumption.

  3. Edge field emission of large-area single layer graphene

    NASA Astrophysics Data System (ADS)

    Kleshch, Victor I.; Bandurin, Denis A.; Orekhov, Anton S.; Purcell, Stephen T.; Obraztsov, Alexander N.

    2015-12-01

    Field electron emission from the edges of large-area (∼1 cm × 1 cm) graphene films deposited onto quartz wafers was studied. The graphene was previously grown by chemical vapour deposition on copper. An extreme enhancement of electrostatic field at the edge of the films with macroscopically large lateral dimensions and with single atom thickness was achieved. This resulted in the creation of a blade type electron emitter, providing stable field emission at low-voltage with linear current density up to 0.5 mA/cm. A strong hysteresis in current-voltage characteristics and a step-like increase of the emission current during voltage ramp up were observed. These effects were explained by the local mechanical peeling of the graphene edge from the quartz substrate by the ponderomotive force during the field emission process. Specific field emission phenomena exhibited in the experimental study are explained by a unique combination of structural, electronic and mechanical properties of graphene. Various potential applications ranging from linear electron beam sources to microelectromechanical systems are discussed.

  4. Graphene-like single-layered covalent organic frameworks: synthesis strategies and application prospects.

    PubMed

    Liu, Xuan-He; Guan, Cui-Zhong; Wang, Dong; Wan, Li-Jun

    2014-10-29

    Two-dimensional (2D) nanomaterials, such as graphene and transition metal chalcogenides, show many interesting dimension-related materials properties. Inspired by the development of 2D inorganic nanomaterials, single-layered covalent organic frameworks (sCOFs), featuring atom-thick sheets and crystalline extended organic structures with covalently bonded building blocks, have attracted great attention in recent years. With their unique graphene-like topological structure and the merit of structural diversity, sCOFs promise to possess novel and designable properties. However, the synthesis of sCOFs with well-defined structures remains a great challenge. Herein, the recent development of the bottom-up synthesis methods of 2D sCOFs, such as thermodynamic equilibrium control methods, growth-kinetics control methods, and surface-assisted covalent polymerization methods, are reviewed. Finally, some of the critical properties and application prospects of these materials are outlined.

  5. Negative magnetoresistance in a vertical single-layer graphene spin valve at room temperature.

    PubMed

    Singh, Arun Kumar; Eom, Jonghwa

    2014-02-26

    Single-layer graphene (SLG) is an ideal material for spintronics because of its high charge-carrier mobility, long spin lifetime resulting from the small spin-orbit coupling, and hyperfine interactions of carbon atoms. Here, we report a vertical spin valve with SLG with device configuration Co/SLG/Al2O3/Ni. We observed negative magnetoresistance (-0.4%) for the Co/SLG/Al2O3/Ni junction at room temperature. However, the Co/Al2O3/Ni junction, which is without graphene, shows positive magnetoresistance. The current-voltage (I-V) characteristics of both Co/SLG/Al2O3/Ni and Co/Al2O3/Ni junctions are nonlinear, and this reveals that charge transport occurs by a tunneling mechanism. We have also explained the reason for negative magnetoresistance for the Co/SLG/Al2O3/Ni junction. PMID:24495123

  6. Clean Nanotube Unzipping by Abrupt Thermal Expansion of Molecular Nitrogen: Graphene Nanoribbons with Atomically Smooth Edges

    SciTech Connect

    Sumpter, Bobby G; Meunier, Vincent; Terrones, M.; Endo, M; Munoz-Sandoval, Emilio; Kim, Y A; Morelos-Bomez, Aaron; Vega-Diaz, Sofia

    2012-01-01

    We report a novel physicochemical route to produce highly crystalline nitrogen-doped graphene nanoribbons. The technique consists of an abrupt N2 gas expansion within the hollow core of nitrogen-doped multiwalled carbon nanotubes (CNx-MWNTs) when exposed to a fast thermal shock. The multiwalled nanotube unzipping mechanism is rationalized using molecular dynamics and density functional theory simulations, which highlight the importance of open-ended nanotubes in promoting the efficient introduction of N2 molecules by capillary action within tubes and surface defects, thus triggering an efficient and atomically smooth unzipping. The so-produced nanoribbons could be few-layered (from graphene bilayer onward) and could exhibit both crystalline zigzag and armchair edges. In contrast to methods developed previously, our technique presents various advantages: (1) the tubes are not heavily oxidized; (2) the method yields sharp atomic edges within the resulting nanoribbons; (3) the technique could be scaled up for the bulk production of crystalline nanoribbons from available MWNT sources; and (4) this route could eventually be used to unzip other types of carbon nanotubes or intercalated layered materials such as BN, MoS2, WS2, etc.

  7. Physisorption of Fullerenes in Graphene layers and carbon Nanoribbons

    NASA Astrophysics Data System (ADS)

    Pacheco, Monica; Orellana, Pedro; Correa, Julian

    2015-03-01

    The study of nanostructures based on carbon allotropes has captured the interest of the scientific community in the last two decades, due to its great versatility. In such structures a simple change of geometry leads to important changes in their physicochemical properties. In this context it has been studied different carbon allotropes complexes in particular for the development of photovoltaic systems. In this paper we show a study of opto-electronic properties of fullerenes physisorbed on graphene nanoribbons. Our calculations are carried out within the framework of density functional theory (DFT) using the SIESTA package. Our results show that effectively the fullerenes bind both to the layer of graphene as well as to the nanoribbons, with binding energies of about 0.5EV. We find that when the complex is formed, the physical properties of fullerenes, graphene and nanoribbons are preserved and when graphene is functionalized with various fullerenes the electronic spectrum is composed of bands of energy which increases the intensity of the optical absorption spectrum of the complex. Conicyt ACT 1204, USM 11.14.68.

  8. Layer-by-layer assembly of thin films containing exfoliated pristine graphene nanosheets and polyethyleneimine.

    PubMed

    Sham, Alison Y W; Notley, Shannon M

    2014-03-11

    A method for the modification of surface properties through the deposition of stabilized graphene nanosheets is described. Here, the thickness of the film is controlled through the use of the layer-by-layer technique, where the sequential adsorption of the cationic polyethyleneimine (PEI) is followed by the adsorption of anionic graphene sheets modified with layers of polyethylene oxide-polypropylene oxide-polyethylene oxide (PEO-PPO-PEO) surfactants. The graphene particles were prepared using the surfactant-assisted liquid-phase exfoliation technique, with the low residual negative charge arising from edge defects. The buildup of the multilayer assembly through electrostatic interactions was strongly influenced by the solution conditions, including pH, ionic strength, and ionic species. Thereby, not only could the thickness of the film be tailored through the choice of the number of bilayers deposited but the viscoelastic properties of the film could also be modified by changing solution conditions at which the different species were deposited. The quartz crystal microbalance was used to measure the mass of graphene and polyelectrolyte immobilized at the interface as well as to probe the energy dissipated in the adsorbed layer.

  9. Layered quantum Hall insulators with ultracold atoms

    SciTech Connect

    Zamora, A.; Szirmai, G.; Lewenstein, M.

    2011-11-15

    We consider a generalization of the two-dimensional (2D) quantum Hall insulator to a noncompact, non-Abelian gauge group, the Heisenberg-Weyl group. We show that this kind of insulator is actually a layered three-dimensional (3D) insulator with nontrivial topology. We further show that nontrivial combinations of quantized transverse conductivities can be engineered with the help of a staggered potential. We investigate the robustness and topological nature of this conductivity and connect it to the surface modes of the system. We also propose a simple experimental realization with ultracold atoms in 3D confined to a 2D square lattice with the third dimension being mapped to a gauge coordinate.

  10. Atomic Layer Deposition - Process Models and Metrologies

    SciTech Connect

    Burgess, D.R. Jr.; Maslar, J.E.; Hurst, W.S.; Moore, E.F.; Kimes, W.A.; Fink, R.R.; Nguyen, N.V.

    2005-09-09

    We report on the status of a combined experimental and modeling study for atomic layer deposition (ALD) of HfO2 and Al2O3. Hafnium oxide films were deposited from tetrakis(dimethylamino)hafnium and water. Aluminum oxide films from trimethyl aluminum and water are being studied through simulations. In this work, both in situ metrologies and process models are being developed. Optically-accessible ALD reactors have been constructed for in situ, high-sensitivity Raman and infrared absorption spectroscopic measurements to monitor gas phase and surface species. A numerical model using computational fluid dynamics codes has been developed to simulate the gas flow and temperature profiles in the experimental reactor. Detailed chemical kinetic models are being developed with assistance from quantum chemical calculations to explore reaction pathways and energetics. This chemistry is then incorporated into the overall reactor models.

  11. Fabrication of graphene/polyaniline composite multilayer films by electrostatic layer-by-layer assembly

    NASA Astrophysics Data System (ADS)

    Cong, Jiaojiao; Chen, Yuze; Luo, Jing; Liu, Xiaoya

    2014-10-01

    A novel graphene/polyaniline composite multilayer film was fabricated by electrostatic interactions induced layer-by-layer self-assembly technique, using water dispersible and negatively charged chemically converted graphene (CCG) and positively charged polyaniline (PANI) as building blocks. CCG was achieved through partly reduced graphene oxide, which remained carboxyl group on its surface. The remaining carboxyl groups not only retain the dispersibility of CCG, but also allow the growth of the multilayer films via electrostatic interactions between graphene and PANI. The structure and morphology of the obtained CCG/PANI multilayer film are characterized by attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Ultraviolet-visible absorption spectrum (UV-vis), scanning electron microscopy (SEM), Raman spectroscopy and X-Ray Diffraction (XRD). The electrochemical properties of the resulting film are studied using cyclic voltammetry (CV), which showed that the resulting CCG/PANI multilayer film kept electroactivity in neutral solution and showed outstanding cyclic stability up to 100 cycles. Furthermore, the composite film exhibited good electrocatalytic ability toward ascorbic acid (AA) with a linear response from 1×10-4 to 1.2×10-3 M with the detect limit of 5×10-6 M. This study provides a facile and effective strategy to fabricate graphene/PANI nanocomposite film with good electrochemical property, which may find potential applications in electronic devices such as electrochemical sensor.

  12. Structural distortions in few-layer graphene creases.

    PubMed

    Robertson, Alex W; Bachmatiuk, Alicja; Wu, Yimin A; Schäffel, Franziska; Büchner, Bernd; Rümmeli, Mark H; Warner, Jamie H

    2011-12-27

    Folds and creases are frequently found in graphene grown by chemical vapor deposition (CVD), due to the differing thermal expansion coefficients of graphene from the growth catalyst and the flexibility of the sheet during transfer from the catalyst. The structure of a few-layer graphene (FLG) crease is examined by aberration-corrected high-resolution transmission electron microscopy (AC-HRTEM). A study of 2D fast Fourier transforms (FFTs) taken about the region of the crease allowed for the crystal stacking structure of the system to be elucidated. It was found that strain-induced stacking faults were created in the AB Bernal-stacked FLG bulk around the region proximal to the crease termination; this is of interest as the stacking order of FLG is known to have an effect on its electronic properties and thus should be considered when transferring CVD-grown FLG to alternate substrates for electronic device fabrication. The FFTs, along with analysis of the real space images, were used to determine the configuration of the layers in the crease itself and were corroborated by multislice atomistic TEM simulations. The termination of the crease part way through the FLG sheet is also examined and is found to show strong out of plane distortions in the area about it. PMID:22122696

  13. Effect of radial stretch on vibration characteristics of single-layered circular graphene sheets

    NASA Astrophysics Data System (ADS)

    Pahlani, Gunjan; Verma, Deepti; Gupta, Shakti

    Vibrations of single-layered circular graphene sheets are studied using molecular mechanics (MM) simulations. Interactions between bonded and non-bonded atoms are prescribed using MM3 potential. Frequencies of different modes of vibration are computed from the eigenvalues and eigen vectors of mass weighted Hessian of the system. This study is performed on graphene sheets of various diameters. A linear continuum membrane model for predicting vibrational frequencies is studied using finite element (FE) method. Frequencies for several modes computed from continuum and molecular model matched well for moderate values of radial stretch, however, with increased stretch those deviated from each other significantly. In particular for higher values of stretch the MM simulations predict considerably lower values of frequencies compared to that found from FE simulations. Also, at higher values of stretch the frequency vs. stretch curve obtained from MM simulations showed a hardening behavior which could not be captured by the linear continuum model. We have also found a similar behavior in two-layered graphene sheets using MM simulations.

  14. Atomic-scale characterization of graphene grown on copper (100) single crystals.

    PubMed

    Rasool, Haider I; Song, Emil B; Mecklenburg, Matthew; Regan, B C; Wang, Kang L; Weiller, Bruce H; Gimzewski, James K

    2011-08-17

    Growth of graphene on copper (100) single crystals by chemical vapor deposition has been accomplished. The atomic structure of the graphene overlayer was studied using scanning tunneling microscopy. A detailed analysis of moiré superstructures present in the graphene topography reveals that growth occurs in a variety of orientations over the square atomic lattice of the copper surface. Transmission electron microscopy was used to elucidate the crystallinity of the grown graphene. Pristine, defect-free graphene was observed over copper steps, corners, and screw dislocations. Distinct protrusions, known as "flower" structures, were observed on flat terraces, which are attributed to carbon structures that depart from the characteristic honeycomb lattice. Continuous graphene growth also occurs over copper adatoms and atomic vacancies present at the single-crystal surface. The copper atom mobility within vacancy islands covered with suspended graphene sheets reveals a weak graphene-substrate interaction. The observed continuity and room-temperature vacancy motion indicates that copper mobility likely plays a significant role in the mechanism of sheet extension on copper substrates. Lastly, these results suggest that the quality of graphene grown on copper substrates is ultimately limited by nucleation at the surface of the metal catalyst. PMID:21732685

  15. Examination of humidity effects on measured thickness and interfacial phenomena of exfoliated graphene on silicon dioxide via amplitude modulation atomic force microscopy

    SciTech Connect

    Jinkins, K.; Farina, L.; Wu, Y.; Camacho, J.

    2015-12-14

    The properties of Few-Layer Graphene (FLG) change with the number of layers and Amplitude Modulation (AM) Atomic Force Microscopy (AFM) is commonly used to determine the thickness of FLG. However, AFM measurements have been shown to be sensitive to environmental conditions such as relative humidity (RH). In the present study, AM-AFM is used to measure the thickness and loss tangent of exfoliated graphene on silicon dioxide (SiO{sub 2}) as RH is increased from 10% to 80%. We show that the measured thickness of graphene is dependent on RH. The loss tangent values of the graphene and oxide regions are both affected by humidity, with generally higher loss tangent for graphene than SiO{sub 2}. As RH increases, we observe the loss tangent of both materials approaches the same value. We hypothesize that there is a layer of water trapped between the graphene and SiO{sub 2} substrate to explain this observation. Using this interpretation, the loss tangent images also indicate movement and change in this trapped water layer as RH increases, which impacts the measured thickness of graphene using AM-AFM.

  16. Chemical nature of boron and nitrogen dopant atoms in graphene strongly influences its electronic properties.

    PubMed

    Lazar, Petr; Zbořil, Radek; Pumera, Martin; Otyepka, Michal

    2014-07-21

    Boron and nitrogen doped graphenes are highly promising materials for electrochemical applications, such as energy storage, generation and sensing. The doped graphenes can be prepared by a broad variety of chemical approaches. The substitution of a carbon atom should induce n-type behavior in the case of nitrogen and p-type behavior in the case of boron-doped graphene; however, the real situation is more complex. The electrochemical experiments show that boron-doped graphene prepared by hydroboration reaction exhibits similar properties as the nitrogen doped graphene; according to theory, the electrochemical behavior of B and N doped graphenes should be opposite. Here we analyze the electronic structure of N/B-doped graphene (at ∼5% coverage) by theoretical calculations. We consider graphene doped by both substitution and addition reactions. The density of states (DOS) plots show that graphene doped by substitution of the carbon atom by N/B behaves as expected, i.e., as an n/p-doped material. N-doped graphene also has a lower value of the workfunction (3.10 eV) with respect to that of the pristine graphene (4.31 eV), whereas the workfunction of B-doped graphene is increased to the value of 5.57 eV. On the other hand, the workfunctions of graphene doped by addition of -NH2 (4.77 eV) and -BH2 (4.54 eV) groups are both slightly increased and therefore the chemical nature of the dopant is less distinguishable. This shows that mode of doping depends significantly on the synthesis method used, as it leads to different types of behaviour, and, in turn, different electronic and electrochemical properties of doped graphene, as observed in electrocatalytic experiments. This study has a tremendous impact on the design of doped graphene systems from the point of view of synthetic chemistry.

  17. Graphene as an efficient interfacial layer for electrochromic devices.

    PubMed

    Lin, Feng; Bult, Justin B; Nanayakkara, Sanjini; Dillon, Anne C; Richards, Ryan M; Blackburn, Jeffrey L; Engtrakul, Chaiwat

    2015-06-01

    This study presents an interfacial modification strategy to improve the performance of electrochromic films that were fabricated by a magnetron sputtering technique. High-quality graphene sheets, synthesized by chemical vapor deposition, were used to modify fluorine-doped tin oxide substrates, followed by the deposition of high-performance nanocomposite nickel oxide electrochromic films. Electrochromic cycling results revealed that a near-complete monolayer graphene interfacial layer improves the electrochromic performance in terms of switching kinetics, activation period, coloration efficiency, and bleached-state transparency, while maintaining ∼100% charge reversibility. The present study offers an alternative route for improving the interfacial properties between electrochromic and transparent conducting oxide films without relying on conventional methods such as nanostructuring or thin film composition control. PMID:25950270

  18. Extreme ultraviolet induced defects on few-layer graphene

    SciTech Connect

    Gao, A.; Zoethout, E.; Lee, C. J.; Rizo, P. J.; Scaccabarozzi, L.; Banine, V.; Bijkerk, F.

    2013-07-28

    We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H{sub 2} background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp{sup 2} bonded carbon fraction decreases while the sp{sup 3} bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

  19. Graphene Layer Growth Chemistry: Five-Six-Ring Flip Reaction

    SciTech Connect

    Whitesides, R.; Domin, D.; Salomon-Ferrer, R.; Lester Jr., W.A.; Frenklach, M.

    2007-12-01

    Reaction pathways are presented for hydrogen-mediated isomerization of a five and six member carbon ring complex on the zigzag edge of a graphene layer. A new reaction sequence that reverses orientation of the ring complex, or 'flips' it, was identified. Competition between the flip reaction and 'ring separation' was examined. Ring separation is the reverse of the five and six member ring complex formation reaction, previously reported as 'ring collision'. The elementary steps of the pathways were analyzed using density-functional theory (DFT). Rate coefficients were obtained by solution of the energy master equation and classical transition state theory utilizing the DFT energies, frequencies, and geometries. The results indicate that the flip reaction pathway dominates the separation reaction and should be competitive with other pathways important to the graphene zigzag edge growth in high temperature environments.

  20. Mode manipulation and near-THz absorptions in binary grating-graphene layer structures

    PubMed Central

    2014-01-01

    The excitation and absorption properties of grating coupled graphene surface plasmons were studied. It was found that whether a mode can be excited is mainly determined by the frequency of incident light and the duty ratio of gratings. In the structure consisting graphene bilayer, a blueshift of the excitation frequency existed when the distance between neighbor graphene layer were decreased gradually. In graphene-grating multilayer structures, a strong absorption (approximately 90% at maximum) was found in near-THz range. PMID:24559407

  1. Direct in situ observations of single Fe atom catalytic processes and anomalous diffusion at graphene edges.

    PubMed

    Zhao, Jiong; Deng, Qingming; Avdoshenko, Stanislav M; Fu, Lei; Eckert, Jürgen; Rümmeli, Mark H

    2014-11-01

    Single-atom catalysts are of great interest because of their high efficiency. In the case of chemically deposited sp(2) carbon, the implementation of a single transition metal atom for growth can provide crucial insight into the formation mechanisms of graphene and carbon nanotubes. This knowledge is particularly important if we are to overcome fabrication difficulties in these materials and fully take advantage of their distinct band structures and physical properties. In this work, we present atomically resolved transmission EM in situ investigations of single Fe atoms at graphene edges. Our in situ observations show individual iron atoms diffusing along an edge either removing or adding carbon atoms (viz., catalytic action). The experimental observations of the catalytic behavior of a single Fe atom are in excellent agreement with supporting theoretical studies. In addition, the kinetics of Fe atoms at graphene edges are shown to exhibit anomalous diffusion, which again, is in agreement with our theoretical investigations.

  2. High resolution transmission electron microscope Imaging and first-principles simulations of atomic-scale features in graphene membrane

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Bhandari, Sagar; Yi, Wei; Bell, David; Westervelt, Robert; Kaxiras, Efthimios

    2012-02-01

    Ultra-thin membranes such as graphene[1] are of great importance for basic science and technology applications. Graphene sets the ultimate limit of thinness, demonstrating that a free-standing single atomic layer not only exists but can be extremely stable and strong [2--4]. However, both theory [5, 6] and experiments [3, 7] suggest that the existence of graphene relies on intrinsic ripples that suppress the long-wavelength thermal fluctuations which otherwise spontaneously destroy long range order in a two dimensional system. Here we show direct imaging of the atomic features in graphene including the ripples resolved using monochromatic aberration-corrected transmission electron microscopy (TEM). We compare the images observed in TEM with simulated images based on an accurate first-principles total potential. We show that these atomic scale features can be mapped through accurate first-principles simulations into high resolution TEM contrast. [1] Geim, A. K. & Novoselov, K. S. Nat. Mater. 6, 183-191, (2007). [2] Novoselov, K. S.et al. Science 306, 666-669, (2004). [3] Meyer, J. C. et al. Nature 446, 60-63, (2007). [4] Lee, C., Wei, X. D., Kysar, J. W. & Hone, J. Science 321, 385-388, (2008). [5] Nelson, D. R. & Peliti, L. J Phys-Paris 48, 1085-1092, (1987). [6] Fasolino, A., Los, J. H. & Katsnelson, M. I. Nat. Mater. 6, 858-861, (2007). [7] Meyer, J. C. et al. Solid State Commun. 143, 101-109, (2007).

  3. Layered Chalcogenides beyond Graphene: from Electronic Structure Evolution to the Spin Transport

    NASA Astrophysics Data System (ADS)

    Yuan, Hongtao

    2014-03-01

    Recent efforts on graphene-like atomic layer materials, aiming at novel electronic properties and quantum phenomena beyond graphene, have attracted much attention for potential electronics/spintronics applications. Compared to the weak spin-orbit-interaction (SOI) in graphene, metal chalcogenides MX2 have heavy 4d/5d elements with strong atomic SOI, providing a unique way for generating spin polarization based on valleytronics physics. Indeed, such a spin-polarized band structure has been demonstrated theoretically and supported by optical investigations. However, despite these exciting progresses, following two important issues in MX2 community remain elusive: 1. the quantitative band structure of MX2 compounds (where are the valleys -band maxima/minima- locating in the BZ) have not been experimentally confirmed. Especially for those cleaved ultrathin mono- and bi-layer flakes hosting most of recently-reported exotic phenomena at the 2D limit, the direct detection for band dispersion becomes of great importance for valleytronics. 2. Spin transports have seldom been reported even though such a strong SOI system can serve as an ideal platform for the spin polarization and spin transport. In this work, we started from the basic electronic structures of representative MX2, obtained by ARPES, and investigated both the band variation between these compounds and their band evolution from bulk to the monolayer limit. After having a systematic understanding on band structures, we reported a giant Zeeman-type spin-polarization generated and modulated by an external electric field in WSe2 electric-double-layer transistors. The non-magnetic approach for realizing such an intriguing spin splitting not only keeps the system time-reversally invariant but also suggests a new paradigm for manipulating the spin-degrees of freedom of electrons. Acknowledge the support from DoE, BES, Division of MSE under contract DE-AC02-76SF00515.

  4. A novel mechanical cleavage method for synthesizing few-layer graphenes

    PubMed Central

    2011-01-01

    A novel method to synthesize few layer graphene from bulk graphite by mechanical cleavage is presented here. The method involves the use of an ultrasharp single crystal diamond wedge to cleave a highly ordered pyrolytic graphite sample to generate the graphene layers. Cleaving is aided by the use of ultrasonic oscillations along the wedge. Characterization of the obtained layers shows that the process is able to synthesize graphene layers with an area of a few micrometers. Application of oscillation enhances the quality of the layers produced with the layers having a reduced crystallite size as determined from the Raman spectrum. Interesting edge structures are observed that needs further investigation. PMID:21711598

  5. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers.

    PubMed

    Najmaei, Sina; Liu, Zheng; Zhou, Wu; Zou, Xiaolong; Shi, Gang; Lei, Sidong; Yakobson, Boris I; Idrobo, Juan-Carlos; Ajayan, Pulickel M; Lou, Jun

    2013-08-01

    Single-layered molybdenum disulphide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for the next generation of nanoelectronics. Here, we report the controlled vapour phase synthesis of molybdenum disulphide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area, single- and few-layered films. Using high-resolution electron microscopy imaging, the atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulphide atomic layers are examined, and the primary mechanisms for grain boundary formation are evaluated. Grain boundaries consisting of 5- and 7- member rings are directly observed with atomic resolution, and their energy landscape is investigated via first-principles calculations. The uniformity in thickness, large grain sizes, and excellent electrical performance signify the high quality and scalable synthesis of the molybdenum disulphide atomic layers.

  6. Graphene as transparent conducting electrodes in organic photovoltaics: studies in graphene morphology, hole transporting layers, and counter electrodes.

    PubMed

    Park, Hyesung; Brown, Patrick R; Bulović, Vladimir; Kong, Jing

    2012-01-11

    In this work, organic photovoltaics (OPV) with graphene electrodes are constructed where the effect of graphene morphology, hole transporting layers (HTL), and counter electrodes are presented. Instead of the conventional poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) PEDOT:PSS HTL, an alternative transition metal oxide HTL (molybdenum oxide (MoO(3))) is investigated to address the issue of surface immiscibility between graphene and PEDOT:PSS. Graphene films considered here are synthesized via low-pressure chemical vapor deposition (LPCVD) using a copper catalyst and experimental issues concerning the transfer of synthesized graphene onto the substrates of OPV are discussed. The morphology of the graphene electrode and HTL wettability on the graphene surface are shown to play important roles in the successful integration of graphene films into the OPV devices. The effect of various cathodes on the device performance is also studied. These factors (i.e., suitable HTL, graphene surface morphology and residues, and the choice of well-matching counter electrodes) will provide better understanding in utilizing graphene films as transparent conducting electrodes in future solar cell applications. PMID:22107487

  7. Temperature-activated layer-breathing vibrations in few-layer graphene.

    PubMed

    Lui, Chun Hung; Ye, Zhipeng; Keiser, Courtney; Xiao, Xun; He, Rui

    2014-08-13

    We investigated the low-frequency Raman spectra of freestanding few-layer graphene (FLG) at varying temperatures (400-900 K) controlled by laser heating. At high temperature, we observed the fundamental Raman mode for the lowest-frequency branch of rigid-plane layer-breathing mode (LBM) vibration. The mode frequency redshifts dramatically from 81 cm(-1) for bilayer to 23 cm(-1) for 8-layer. The thickness dependence is well described by a simple model of coupled oscillators. Notably, the LBM Raman response is unobservable at room temperature, and it is turned on at higher temperature (>600 K) with a steep increase of Raman intensity. The observation suggests that the LBM vibration is strongly suppressed by molecules adsorbed on the graphene surface but is activated as desorption occurs at high temperature.

  8. Electronic Raman scattering in graphite and single-layer and few-layer graphene

    NASA Astrophysics Data System (ADS)

    Ponosov, Yu. S.; Ushakov, A. V.; Streltsov, S. V.

    2015-05-01

    We investigated polarization-resolved electronic Raman scattering in different graphitic structures, including bulk graphite and single-layer and few-layer graphene. For all investigated samples, the broad continua of interband electronic transitions were detected at an energy ˜0.35 eV, while they were expected to be at ˜6 eV [Phys. Rev. B 88, 085416 (2013), 10.1103/PhysRevB.88.085416]. The symmetry of the observed excitations corresponds to the A2 g irreducible representation. A quasilinear behavior of the Raman response is observed at low energies in all cases at room temperature, in agreement with performed tight-binding calculations. High-energy features at ˜0.8 eV are detected in the spectra of graphite and few-layer graphene. They are attributed to interband transitions in the vicinity of the K point, which involve electronic bands split by interlayer interaction. The effects of the substrate type, defect amount, and doping on the continuum line shape and symmetry are discovered. The silent layer-breathing mode is observed in a single-layer graphene. The results evidence that the electronic light scattering in graphitic structures without an external magnetic field is a powerful tool, which provides a variety of data on the structure and symmetry of low-energy electronic excitations.

  9. Atomically controlled substitutional boron-doping of graphene nanoribbons

    PubMed Central

    Kawai, Shigeki; Saito, Shohei; Osumi, Shinichiro; Yamaguchi, Shigehiro; Foster, Adam S.; Spijker, Peter; Meyer, Ernst

    2015-01-01

    Boron is a unique element in terms of electron deficiency and Lewis acidity. Incorporation of boron atoms into an aromatic carbon framework offers a wide variety of functionality. However, the intrinsic instability of organoboron compounds against moisture and oxygen has delayed the development. Here, we present boron-doped graphene nanoribbons (B-GNRs) of widths of N=7, 14 and 21 by on-surface chemical reactions with an employed organoboron precursor. The location of the boron dopant is well defined in the centre of the B-GNR, corresponding to 4.8 atom%, as programmed. The chemical reactivity of B-GNRs is probed by the adsorption of nitric oxide (NO), which is most effectively trapped by the boron sites, demonstrating the Lewis acid character. Structural properties and the chemical nature of the NO-reacted B-GNR are determined by a combination of scanning tunnelling microscopy, high-resolution atomic force microscopy with a CO tip, and density functional and classical computations. PMID:26302943

  10. Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; Wang, Ye-Liang; Que, Yan-De; Gao, Hong-Jun

    2015-07-01

    An efficient method based on atomic force microscopy (AFM) has been developed to characterize silicon intercalated graphene grown on single crystalline Ir(111) thin films. By combining analyses of the phase image, force curves, and friction-force mapping, acquired by AFM, the locations and coverages of graphene and silicon oxide can be well distinguished. We can also demonstrate that silicon atoms have been successfully intercalated between graphene and the substrate. Our method gives an efficient and simple way to characterize graphene samples with interacted atoms and is very helpful for future applications of graphene-based devices in the modern microelectronic industry, where AFM is already widely used. Project supported by the National Basic Research Program of China (Grant Nos. 2013CBA01600 and 2011CB932700), the National Natural Science Foundation of China (Grant Nos. 61222112, 61390501 and 51325204), and Chinese Academy of Sciences (Grant Nos. 1731300500015 and XDB07030100).

  11. Substrate-Independent Growth of Atomically Precise Chiral Graphene Nanoribbons

    PubMed Central

    2016-01-01

    Contributing to the need for new graphene nanoribbon (GNR) structures that can be synthesized with atomic precision, we have designed a reactant that renders chiral (3,1)-GNRs after a multistep reaction including Ullmann coupling and cyclodehydrogenation. The nanoribbon synthesis has been successfully proven on different coinage metals, and the formation process, together with the fingerprints associated with each reaction step, has been studied by combining scanning tunneling microscopy, core-level spectroscopy, and density functional calculations. In addition to the GNR’s chiral edge structure, the substantial GNR lengths achieved and the low processing temperature required to complete the reaction grant this reactant extremely interesting properties for potential applications. PMID:27548516

  12. Detecting single graphene layer by using fluorescence from high-speed Ar^7+ ion

    NASA Astrophysics Data System (ADS)

    Miyamoto, Yoshiyuki; Zhang, Hong

    2008-03-01

    A highly-charged-ion interacting with graphite causes structural change in nano-scales [1]. While when the ion's kinetic energy reaches few MeVs, the induced is not the structural change but electronic excitation. An experiment [2] showed fluorescence from Ar^7+ ions penetrating through carbon foil with kinetic energy of 2 MeV. Motivated by this experiment, we tested interaction between an Ar^7+ ion and a graphene sheet by the time-dependent density functional approach, and found that the electronic excitation in the Ar^ 7+ ion is also the case even when the incident kinetic energy is 500 KeV and the target thickness is only mono-atomic layer. This simulation suggests the possibility of detecting a suspended mono-atomic layer of graphene [3] by monitoring fluorescence from the penetrated Ar^7+ ions. We will discuss its importance for analyzing bombardment of solids by highly charged, high-speed ions and possible experiments according to the present result. References: [1] T. Meguro, et al., Appl. Phys. Lett 79, 3866 (2001). [2] S. Bashkin, H. Oona, E. Veje, Phys, Rev. A25, 417 (1982). [3] J. Mayer et al., Nature (London), 446, 60 (2007).

  13. Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.

    PubMed

    Wu, Yun; Zou, Jianjun; Huo, Shuai; Lu, Haiyan; Kong, Yuecan; Chen, Tangshen; Wu, Wei; Xu, Jingxia

    2015-08-01

    Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively. PMID:26369142

  14. Long Spin Diffusion Length in Few-Layer Graphene Flakes

    NASA Astrophysics Data System (ADS)

    Yan, W.; Phillips, L. C.; Barbone, M.; Hämäläinen, S. J.; Lombardo, A.; Ghidini, M.; Moya, X.; Maccherozzi, F.; van Dijken, S.; Dhesi, S. S.; Ferrari, A. C.; Mathur, N. D.

    2016-09-01

    We report a spin valve with a few-layer graphene flake bridging highly spin-polarized La0.67Sr0.33MnO3 electrodes, whose surfaces are kept clean during lithographic definition. Sharp magnetic switching is verified using photoemission electron microscopy with x-ray magnetic circular dichroism contrast. A naturally occurring high interfacial resistance ˜12 M Ω facilitates spin injection, and a large resistive switching (0.8 M Ω at 10 K) implies a 70 - 130 μ m spin diffusion length that exceeds previous values obtained with sharp-switching electrodes.

  15. Plasma resonant terahertz photomixers based on double graphene layer structures

    NASA Astrophysics Data System (ADS)

    Ryzhii, Maxim; Shur, Michael S.; Mitin, Vladimir; Satou, Akira; Ryzhii, Victor; Otsuji, Taiichi

    2014-03-01

    We propose terahertz (THz) photomixers based on double graphene layer (DGL) structures, utilizing the interband absorption of modulated optical radiation, tunneling or thermionic inter-GL transitions, and resonant excitation of plasma oscillations. Using the developed device model, we substantiate the operation of the photomixers and calculate their characteristics. We demonstrate that the output frequency-dependent power of THz radiation exhibits pronounced resonant peaks at the plasmonic resonant frequencies. The proposed THz photomixer can surpass the pertinent devices based on the standard heterostructures.

  16. Monolayer and/or few-layer graphene on metal or metal-coated substrates

    DOEpatents

    Sutter, Peter Werner; Sutter, Eli Anguelova

    2015-04-14

    Disclosed is monolayer and/or few-layer graphene on metal or metal-coated substrates. Embodiments include graphene mirrors. In an example, a mirror includes a substrate that has a surface exhibiting a curvature operable to focus an incident beam onto a focal plane. A graphene layer conformally adheres to the substrate, and is operable to protect the substrate surface from degradation due to the incident beam and an ambient environment.

  17. Biomass derived solvents for the scalable production of single layered graphene from graphite.

    PubMed

    Sharma, Mukesh; Mondal, Dibyendu; Singh, Nripat; Prasad, Kamalesh

    2016-07-12

    Among four different biomass derived green and sustainable solvents namely levulinic acid (LA), ethyl lactate (EL), γ-valerolactone (GVL) and formic acid (FA) only LA was found to exfoliate graphite to single and few layered graphene sheets. During exfoliation, the formation of LA crystals embedded with single layered graphene sheets was observed. The process is scalable and the solvent can be recovered and reused in five subsequent cycles of exfoliation for the large scale production of graphene sheets.

  18. Development of the layer-by-layer biosensor using graphene films: application for cholesterol determination

    NASA Astrophysics Data System (ADS)

    Binh Nguyen, Hai; Chuc Nguyen, Van; Nguyen, Van Tu; Doan Le, Huu; Quynh Nguyen, Van; Thanh Tam Ngo, Thi; Phuc Do, Quan; Nghia Nguyen, Xuan; Phan, Ngoc Minh; Tran, Dai Lam

    2013-03-01

    The preparation and characterization of graphene films for cholesterol determination are described. The graphene films were synthesized by thermal chemical vapor deposition (CVD) method. Methane gas (CH4) and copper tape were used as carbon source and catalyst in the graphene growth process, respectively. The intergrated array was fabricated by using micro-electro-mechanical systems (MEMS) technology in which Fe3O4-doped polyaniline (PANi) film was electropolymerized on Pt/Gr electrodes. The properties of the Pt/Gr/PANi/Fe3O4 films were investigated by field-emission scanning electron microscopy (FE-SEM), Raman spectroscopy and electrochemical techniques. Cholesterol oxidase (ChOx) has been immobilized onto the working electrode with glutaraldehyde agent. The cholesterol electrochemical biosensor shows high sensitivity (74 μA mM-1 cm-2) and fast response time (<5 s). A linear calibration plot was obtained in the wide cholesterol concentration range from 2 to 20 mM and correlation coefficient square (R2) of 0.9986. This new layer-by-layer biosensor based on graphene films promises many practical applications.

  19. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    NASA Astrophysics Data System (ADS)

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-08-01

    We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Transport measurements of exfoliated graphene after SrO deposition show a strong dependence between the Dirac point and Sr oxidation. Subsequently, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  20. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    DOE PAGES

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-04-27

    Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  1. Fabrication of hybrid graphene oxide/polyelectrolyte capsules by means of layer-by-layer assembly on erythrocyte cell templates.

    PubMed

    Irigoyen, Joseba; Politakos, Nikolaos; Diamanti, Eleftheria; Rojas, Elena; Marradi, Marco; Ledezma, Raquel; Arizmendi, Layza; Rodríguez, J Alberto; Ziolo, Ronald F; Moya, Sergio E

    2015-01-01

    A novel and facile method was developed to produce hybrid graphene oxide (GO)-polyelectrolyte (PE) capsules using erythrocyte cells as templates. The capsules are easily produced through the layer-by-layer technique using alternating polyelectrolyte layers and GO sheets. The amount of GO and therefore its coverage in the resulting capsules can be tuned by adjusting the concentration of the GO dispersion during the assembly. The capsules retain the approximate shape and size of the erythrocyte template after the latter is totally removed by oxidation with NaOCl in water. The PE/GO capsules maintain their integrity and can be placed or located on other surfaces such as in a device. When the capsules are dried in air, they collapse to form a film that is approximately twice the thickness of the capsule membrane. AFM images in the present study suggest a film thickness of approx. 30 nm for the capsules in the collapsed state implying a thickness of approx. 15 nm for the layers in the collapsed capsule membrane. The polyelectrolytes used in the present study were polyallylamine hydrochloride (PAH) and polystyrenesulfonate sodium salt (PSS). Capsules where characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM), dynamic light scattering (DLS) and Raman microscopy, the constituent layers by zeta potential and GO by TEM, XRD, and Raman and FTIR spectroscopies.

  2. Fabrication of hybrid graphene oxide/polyelectrolyte capsules by means of layer-by-layer assembly on erythrocyte cell templates

    PubMed Central

    Irigoyen, Joseba; Politakos, Nikolaos; Diamanti, Eleftheria; Rojas, Elena; Marradi, Marco; Ledezma, Raquel; Arizmendi, Layza; Rodríguez, J Alberto; Ziolo, Ronald F

    2015-01-01

    Summary A novel and facile method was developed to produce hybrid graphene oxide (GO)–polyelectrolyte (PE) capsules using erythrocyte cells as templates. The capsules are easily produced through the layer-by-layer technique using alternating polyelectrolyte layers and GO sheets. The amount of GO and therefore its coverage in the resulting capsules can be tuned by adjusting the concentration of the GO dispersion during the assembly. The capsules retain the approximate shape and size of the erythrocyte template after the latter is totally removed by oxidation with NaOCl in water. The PE/GO capsules maintain their integrity and can be placed or located on other surfaces such as in a device. When the capsules are dried in air, they collapse to form a film that is approximately twice the thickness of the capsule membrane. AFM images in the present study suggest a film thickness of approx. 30 nm for the capsules in the collapsed state implying a thickness of approx. 15 nm for the layers in the collapsed capsule membrane. The polyelectrolytes used in the present study were polyallylamine hydrochloride (PAH) and polystyrenesulfonate sodium salt (PSS). Capsules where characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM), dynamic light scattering (DLS) and Raman microscopy, the constituent layers by zeta potential and GO by TEM, XRD, and Raman and FTIR spectroscopies. PMID:26734521

  3. Fabrication of hybrid graphene oxide/polyelectrolyte capsules by means of layer-by-layer assembly on erythrocyte cell templates.

    PubMed

    Irigoyen, Joseba; Politakos, Nikolaos; Diamanti, Eleftheria; Rojas, Elena; Marradi, Marco; Ledezma, Raquel; Arizmendi, Layza; Rodríguez, J Alberto; Ziolo, Ronald F; Moya, Sergio E

    2015-01-01

    A novel and facile method was developed to produce hybrid graphene oxide (GO)-polyelectrolyte (PE) capsules using erythrocyte cells as templates. The capsules are easily produced through the layer-by-layer technique using alternating polyelectrolyte layers and GO sheets. The amount of GO and therefore its coverage in the resulting capsules can be tuned by adjusting the concentration of the GO dispersion during the assembly. The capsules retain the approximate shape and size of the erythrocyte template after the latter is totally removed by oxidation with NaOCl in water. The PE/GO capsules maintain their integrity and can be placed or located on other surfaces such as in a device. When the capsules are dried in air, they collapse to form a film that is approximately twice the thickness of the capsule membrane. AFM images in the present study suggest a film thickness of approx. 30 nm for the capsules in the collapsed state implying a thickness of approx. 15 nm for the layers in the collapsed capsule membrane. The polyelectrolytes used in the present study were polyallylamine hydrochloride (PAH) and polystyrenesulfonate sodium salt (PSS). Capsules where characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM), dynamic light scattering (DLS) and Raman microscopy, the constituent layers by zeta potential and GO by TEM, XRD, and Raman and FTIR spectroscopies. PMID:26734521

  4. Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer

    SciTech Connect

    El-Atab, Nazek; Nayfeh, Ammar; Cimen, Furkan; Alkis, Sabri; Okyay, Ali K.

    2014-07-21

    A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage V{sub t} shift (4 V) at low operating voltage (6/−6 V), good retention (>10 yr), and good endurance characteristic (>10{sup 4} cycles). This memory performance is compared to control devices with graphene nanoplatelets (or ZnO) and a thicker tunnel oxide. These structures showed a reduced V{sub t} shift and retention characteristic. The GNIZ structure allows for scaling down the tunnel oxide thickness along with improving the memory window and retention of data. The larger V{sub t} shift indicates that the ZnO adds available trap states and enhances the emission and retention of charges. The charge emission mechanism in the memory structures with graphene nanoplatelets at an electric field E ≥ 5.57 MV/cm is found to be based on Fowler-Nordheim tunneling. The fabrication of this memory device is compatible with current semiconductor processing, therefore, has great potential in low-cost nano-memory applications.

  5. Large scale atomistic simulation of single-layer graphene growth on Ni(111) surface: molecular dynamics simulation based on a new generation of carbon-metal potential

    NASA Astrophysics Data System (ADS)

    Xu, Ziwei; Yan, Tianying; Liu, Guiwu; Qiao, Guanjun; Ding, Feng

    2015-12-01

    To explore the mechanism of graphene chemical vapor deposition (CVD) growth on a catalyst surface, a molecular dynamics (MD) simulation of carbon atom self-assembly on a Ni(111) surface based on a well-designed empirical reactive bond order potential was performed. We simulated single layer graphene with recorded size (up to 300 atoms per super-cell) and reasonably good quality by MD trajectories up to 15 ns. Detailed processes of graphene CVD growth, such as carbon atom dissolution and precipitation, formation of carbon chains of various lengths, polygons and small graphene domains were observed during the initial process of the MD simulation. The atomistic processes of typical defect healing, such as the transformation from a pentagon into a hexagon and from a pentagon-heptagon pair (5|7) to two adjacent hexagons (6|6), were revealed as well. The study also showed that higher temperature and longer annealing time are essential to form high quality graphene layers, which is in agreement with experimental reports and previous theoretical results.To explore the mechanism of graphene chemical vapor deposition (CVD) growth on a catalyst surface, a molecular dynamics (MD) simulation of carbon atom self-assembly on a Ni(111) surface based on a well-designed empirical reactive bond order potential was performed. We simulated single layer graphene with recorded size (up to 300 atoms per super-cell) and reasonably good quality by MD trajectories up to 15 ns. Detailed processes of graphene CVD growth, such as carbon atom dissolution and precipitation, formation of carbon chains of various lengths, polygons and small graphene domains were observed during the initial process of the MD simulation. The atomistic processes of typical defect healing, such as the transformation from a pentagon into a hexagon and from a pentagon-heptagon pair (5|7) to two adjacent hexagons (6|6), were revealed as well. The study also showed that higher temperature and longer annealing time are

  6. Few-layer graphene shells and nonmagnetic encapsulates: a versatile and nontoxic carbon nanomaterial.

    PubMed

    Bachmatiuk, Alicja; Mendes, Rafael G; Hirsch, Cordula; Jähne, Carsten; Lohe, Martin R; Grothe, Julia; Kaskel, Stefan; Fu, Lei; Klingeler, Rüdiger; Eckert, Jürgen; Wick, Peter; Rümmeli, Mark H

    2013-12-23

    In this work a simple and scalable approach to coat nonmagnetic nanoparticles with few-layer graphene is presented. In addition, the easy processing of such nanoparticles to remove their core, leaving only the 3D graphene nanoshell, is demonstrated. The samples are comprehensively characterized, as are their versatility in terms of functionalization and as a material for electrochemical storage. Indeed, these 3D graphene nanostructures are easily functionalized much as is found with carbon nanotubes and planar graphene. Electrochemical investigations indicate these nanostructures are promising for stable long-life battery applications. Finally, initial toxicological investigations suggest no acute health risk from these 3D graphene nanostructures.

  7. Atomic layer deposition of metal sulfide materials.

    PubMed

    Dasgupta, Neil P; Meng, Xiangbo; Elam, Jeffrey W; Martinson, Alex B F

    2015-02-17

    CONSPECTUS: The field of nanoscience is delivering increasingly intricate yet elegant geometric structures incorporating an ever-expanding palette of materials. Atomic layer deposition (ALD) is a powerful driver of this field, providing exceptionally conformal coatings spanning the periodic table and atomic-scale precision independent of substrate geometry. This versatility is intrinsic to ALD and results from sequential and self-limiting surface reactions. This characteristic facilitates digital synthesis, in which the film grows linearly with the number of reaction cycles. While the majority of ALD processes identified to date produce metal oxides, novel applications in areas such as energy storage, catalysis, and nanophotonics are motivating interest in sulfide materials. Recent progress in ALD of sulfides has expanded the diversity of accessible materials as well as a more complete understanding of the unique chalcogenide surface chemistry. ALD of sulfide materials typically uses metalorganic precursors and hydrogen sulfide (H2S). As in oxide ALD, the precursor chemistry is critical to controlling both the film growth and properties including roughness, crystallinity, and impurity levels. By modification of the precursor sequence, multicomponent sulfides have been deposited, although challenges remain because of the higher propensity for cation exchange reactions, greater diffusion rates, and unintentional annealing of this more labile class of materials. A deeper understanding of these surface chemical reactions has been achieved through a combination of in situ studies and quantum-chemical calculations. As this understanding matures, so does our ability to deterministically tailor film properties to new applications and more sophisticated devices. This Account highlights the attributes of ALD chemistry that are unique to metal sulfides and surveys recent applications of these materials in photovoltaics, energy storage, and photonics. Within each application

  8. Precise Control of the Number of Layers of Graphene by Picosecond Laser Thinning

    PubMed Central

    Lin, Zhe; Ye, Xiaohui; Han, Jinpeng; Chen, Qiao; Fan, Peixun; Zhang, Hongjun; Xie, Dan; Zhu, Hongwei; Zhong, Minlin

    2015-01-01

    The properties of graphene can vary as a function of the number of layers (NOL). Controlling the NOL in large area graphene is still challenging. In this work, we demonstrate a picosecond (ps) laser thinning removal of graphene layers from multi-layered graphene to obtain desired NOL when appropriate pulse threshold energy is adopted. The thinning process is conducted in atmosphere without any coating and it is applicable for graphene films on arbitrary substrates. This method provides many advantages such as one-step process, non-contact operation, substrate and environment-friendly, and patternable, which will enable its potential applications in the manufacturing of graphene-based electronic devices. PMID:26111758

  9. Energy gaps of atomically precise armchair graphene sidewall nanoribbons

    NASA Astrophysics Data System (ADS)

    Wang, Wen-Xiao; Zhou, Mei; Li, Xinqi; Li, Si-Yu; Wu, Xiaosong; Duan, Wenhui; He, Lin

    2016-06-01

    Theoretically, it has been demonstrated that armchair Graphene nanoribbons (GNRs) can be divided into three families, i.e., Na=3 p ,Na=3 p +1 , and Na=3 p +2 (here Na is the number of dimer lines across the ribbon width and p is an integer), according to their electronic structures, and the energy gaps for the three families are quite different even with the same p . However, a systematic experimental verification of this fundamental prediction is still lacking, owing to very limited atomic-level control of the width of the armchair GNRs investigated. Here, we studied electronic structures of the armchair GNRs with atomically well-defined widths ranging from Na=6 to Na=26 by using a scanning tunneling microscope. Our result demonstrated explicitly that all the studied armchair GNRs exhibit semiconducting gaps and, more importantly, the observed gaps as a function of Na are well grouped into the three categories, as predicted by density-functional theory calculations. Such a result indicated that the electronic properties of the armchair GNRs can be tuned dramatically by simply adding or cutting one carbon dimer line along the ribbon width.

  10. Quantum dynamics of hydrogen atoms on graphene. II. Sticking

    SciTech Connect

    Bonfanti, Matteo; Jackson, Bret; Hughes, Keith H.; Burghardt, Irene

    2015-09-28

    Following our recent system-bath modeling of the interaction between a hydrogen atom and a graphene surface [Bonfanti et al., J. Chem. Phys. 143, 124703 (2015)], we present the results of converged quantum scattering calculations on the activated sticking dynamics. The focus of this study is the collinear scattering on a surface at zero temperature, which is treated with high-dimensional wavepacket propagations with the multi-configuration time-dependent Hartree method. At low collision energies, barrier-crossing dominates the sticking and any projectile that overcomes the barrier gets trapped in the chemisorption well. However, at high collision energies, energy transfer to the surface is a limiting factor, and fast H atoms hardly dissipate their excess energy and stick on the surface. As a consequence, the sticking coefficient is maximum (∼0.65) at an energy which is about one and half larger than the barrier height. Comparison of the results with classical and quasi-classical calculations shows that quantum fluctuations of the lattice play a primary role in the dynamics. A simple impulsive model describing the collision of a classical projectile with a quantum surface is developed which reproduces the quantum results remarkably well for all but the lowest energies, thereby capturing the essential physics of the activated sticking dynamics investigated.

  11. Quantum dynamics of hydrogen atoms on graphene. II. Sticking.

    PubMed

    Bonfanti, Matteo; Jackson, Bret; Hughes, Keith H; Burghardt, Irene; Martinazzo, Rocco

    2015-09-28

    Following our recent system-bath modeling of the interaction between a hydrogen atom and a graphene surface [Bonfanti et al., J. Chem. Phys. 143, 124703 (2015)], we present the results of converged quantum scattering calculations on the activated sticking dynamics. The focus of this study is the collinear scattering on a surface at zero temperature, which is treated with high-dimensional wavepacket propagations with the multi-configuration time-dependent Hartree method. At low collision energies, barrier-crossing dominates the sticking and any projectile that overcomes the barrier gets trapped in the chemisorption well. However, at high collision energies, energy transfer to the surface is a limiting factor, and fast H atoms hardly dissipate their excess energy and stick on the surface. As a consequence, the sticking coefficient is maximum (∼0.65) at an energy which is about one and half larger than the barrier height. Comparison of the results with classical and quasi-classical calculations shows that quantum fluctuations of the lattice play a primary role in the dynamics. A simple impulsive model describing the collision of a classical projectile with a quantum surface is developed which reproduces the quantum results remarkably well for all but the lowest energies, thereby capturing the essential physics of the activated sticking dynamics investigated. PMID:26429029

  12. Synthesis and characterization of intercalated few-layer graphenes

    NASA Astrophysics Data System (ADS)

    Sato, Shogo; Ichikawa, Hiroaki; Iwata, Nobuyuki; Yamamoto, Hiroshi

    2014-02-01

    Toward achieving room-temperature superconductivity, FeCl3-intercalated few-layer graphenes (FeCl3-FLGs) and Ca-intercalated few-layer graphenes (Ca-FLGs) were synthesized. FeCl3-FLGs were synthesized by the two-zone method and Ca-FLGs were synthesized using Ca-Li alloy. The Raman spectra of the FeCl3-FLGs showed a lower-intensity peak at 1607 cm-1 than that of the corresponding bare G. The peak at 1607 cm-1 suggested that the sample was stage 4-5 FeCl3-FLGs. The room-temperature electrical resistivity of FeCl3-FLGs was 2.65 × 10-5 Ω·m, which linearly decreased with decreasing temperature with a marked change occurring at approximately 200 K. From a XRD pattern of Ca-FLGs, we concluded that Ca is intercalated in FLGs. The room-temperature resistivity of Ca-FLGs was 3.45 × 10-5 Ω·m, which increased with decreasing temperature.

  13. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

    PubMed

    Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook; Chung, Hee-Suk; Kim, Dong Jae; Kwon, Jung-Dae; Park, Sang Won; Park, Jucheol; Choi, Sun Young; Lee, Byoung Hun; Park, Ji Hyeon; Lee, Kyu Hwan; Kim, Dong-Ho; Choi, Sung Mook; Ajayan, Pulickel M; Hahm, Myung Gwan; Cho, Byungjin

    2016-03-01

    Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices.

  14. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

    PubMed

    Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook; Chung, Hee-Suk; Kim, Dong Jae; Kwon, Jung-Dae; Park, Sang Won; Park, Jucheol; Choi, Sun Young; Lee, Byoung Hun; Park, Ji Hyeon; Lee, Kyu Hwan; Kim, Dong-Ho; Choi, Sung Mook; Ajayan, Pulickel M; Hahm, Myung Gwan; Cho, Byungjin

    2016-03-01

    Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices. PMID:26839956

  15. Ab initio modeling of graphene layer functionalized with boron and nitrogen

    SciTech Connect

    Woińska, Magdalena; Milowska, Karolina; Majewski, Jacek A.

    2013-12-04

    We present a computational study of the phenomenon of opening the band gap in graphene by means of functionalization with boron and nitrogen atoms. For most of the considered structures, we observe a nonzero energy gap with the width slightly dependent on the concentration of the substituent atoms. Additionally, elastic properties for graphene functionalized with B/N atoms for concentrations of 2% and 4% have been predicted. N-substitution almost does not influence the elastic moduli of graphene, while changes caused by B-substitution are more remarkable.

  16. Electron dynamics of the buffer layer and bilayer graphene on SiC

    NASA Astrophysics Data System (ADS)

    Shearer, Alex J.; Johns, James E.; Caplins, Benjamin W.; Suich, David E.; Hersam, Mark C.; Harris, Charles B.

    2014-06-01

    Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n = 2, and n = 3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n = 2 the n = 3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons.

  17. Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

    PubMed Central

    Ki Min, Bok; Kim, Seong K.; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

    2015-01-01

    Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer. PMID:26530817

  18. Enhanced ultra-low-frequency interlayer shear modes in folded graphene layers

    NASA Astrophysics Data System (ADS)

    Cong, Chunxiao; Yu, Ting

    2014-08-01

    Few-layer graphene has attracted tremendous attention owing to its exceptional electronic properties inherited from single-layer graphene and new features led by introducing extra freedoms such as interlayer stacking sequences or rotations. Effectively probing interlayer shear modes are critical for unravelling mechanical and electrical properties of few-layer graphene and further developing its practical potential. Unfortunately, shear modes are extremely weak and almost fully blocked by a Rayleigh rejecter in Raman measurements. This greatly hinders investigations of shear modes in few-layer graphene. Here, we demonstrate enhancing of shear modes by properly folding few-layer graphene. As a direct benefit of the strong signal, enhancement mechanism, vibrational symmetry, anharmonicity and electron-phonon coupling of the shear modes are uncovered through studies of Raman mapping, polarization- and temperature-dependent Raman spectroscopy. This work complements Raman studies of graphene layers, and paves an efficient way to exploit low-frequency shear modes of few-layer graphene and other two-dimensional layered materials.

  19. An analysis of electrochemical energy storage using electrodes fabricated from atomically thin 2D structures of MoS2, graphene and MoS2/graphene composites

    NASA Astrophysics Data System (ADS)

    Huffstutler, Jacob D.

    The behavior of 2D materials has become of great interest in the wake of development of electrochemical double-layer capacitors (EDLCs) and the discovery of monolayer graphene by Geim and Novoselov. This study aims to analyze the response variance of 2D electrode materials for EDLCs prepared through the liquid-phase exfoliation method when subjected to differing conditions. Once exfoliated, samples are tested with a series of structural characterization methods, including tunneling electron microscopy, atomic force microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy. A new ionic liquid for EDLC use, 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl)trifluorophosphate is compared in performance to 6M potassium hydroxide aqueous electrolyte. Devices composed of liquid-phase exfoliated graphene / MoS2 composites are analyzed by concentration for ideal performance. Device performance under cold extreme temperatures for the ionic fluid is presented as well. A brief overview of by-layer analysis of graphene electrode materials is presented as-is. All samples were tested with cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy, with good capacitive results. The evolution of electrochemical behavior through the altered parameters is tracked as well.

  20. Graphene as an atomically thin interface for growth of vertically aligned carbon nanotubes

    PubMed Central

    Rao, Rahul; Chen, Gugang; Arava, Leela Mohana Reddy; Kalaga, Kaushik; Ishigami, Masahiro; Heinz, Tony F.; Ajayan, Pulickel M.; Harutyunyan, Avetik R.

    2013-01-01

    Growth of vertically aligned carbon nanotube (CNT) forests is highly sensitive to the nature of the substrate. This constraint narrows the range of available materials to just a few oxide-based dielectrics and presents a major obstacle for applications. Using a suspended monolayer, we show here that graphene is an excellent conductive substrate for CNT forest growth. Furthermore, graphene is shown to intermediate growth on key substrates, such as Cu, Pt, and diamond, which had not previously been compatible with nanotube forest growth. We find that growth depends on the degree of crystallinity of graphene and is best on mono- or few-layer graphene. The synergistic effects of graphene are revealed by its endurance after CNT growth and low contact resistances between the nanotubes and Cu. Our results establish graphene as a unique interface that extends the class of substrate materials for CNT growth and opens up important new prospects for applications. PMID:23712556

  1. Synthesis and Characterizations of Two-Dimensional Atomic Layers and Their Heterostructures

    NASA Astrophysics Data System (ADS)

    Lee, Yi-Hsien

    2015-03-01

    Monolayers of van der Waals (vdw) materials, including graphene, h-BN, and MoS2, have been highlighted regarding both scientific and industrial aspects due to novel physical phenomenon inherited from the reduced dimensionality. Layered transition metal dichalcogenides (TMD) atomic layers, being considered as the thinnest semiconductor, exhibit great potential for advanced nano-devices. Monolayer in the class of offered a burgeoning field in fundamental physics, energy harvesting, electronics and optoelectronics. Recently, atomically thin heterostructures of TMD monolayer with various geometrical and energy band alignments are expected to be the key materials for next generation flexible optoelectronics. The individual TMD monolayers can be adjoined vertically or laterally to construct diverse heterostructures which are difficult to reach with the laborious pick up-and-transfer method of the exfoliated flakes. The ability to produce copious amounts of high quality layered heterostructures on diverse surfaces is highly desirable but it has remained a challenging issue. Here, we have achieved a direct synthesis of various heterostructures of monolayer TMDs. The synthesis was performed using ambient-pressure CVD with aromatic molecules as seeding promoters. We discuss possible growth behaviors, and we examine the symmetry and the interface of these heterostructures using optical analysis and atomic-resolution scanning TEM. Our method offers a controllable synthesis of to obtain high-quality heterostructures of TMD atomic layers with diverse interface geometry.

  2. Spin and valley resolved Landau level crossing in tri-layer ABA stacked graphene

    NASA Astrophysics Data System (ADS)

    Datta, Biswajit; Gupta, Vishakha; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Deshmukh, Mandar

    We present quantum Hall measurements on a high quality encapsulated tri-layer graphene device. Low temperature field effect mobility of this device is around 500,000 cm2/Vs and we see SdH oscillations at a magnetic field as low as 0.3 T. Quantum Hall measurements confirm that the chosen tri layer graphene is Bernal (ABA) stacked. Due to the presence of both mass-less monolayer like Dirac fermions and massive bi-layer like Dirac fermions in Bernal stacked tri-layer graphene, there are Landau level crossings between monolayer and bi-layer bands in quantum Hall regime. Although most of the Landau Level crossings are predominantly present on the electron sides, we also observe signatures of the crossings on the hole side. This behaviour is consistent with the asymmetry of electron and hole in ABA tri-layer graphene. We observe a series of crossings of the spin and valley resolved Landau Levels.

  3. Observing the Heterogeneous Electro-redox of Individual Single-Layer Graphene Sheets.

    PubMed

    Chen, Tao; Zhang, Yuwei; Xu, Weilin

    2016-09-27

    Electro-redox-induced heterogeneous fluorescence of an individual single-layer graphene sheet was observed in real time by a total internal reflection fluorescence microscope. It was found that the fluorescence intensity of an individual sheet can be tuned reversibly by applying periodic voltages to control the redox degree of graphene sheets. Accordingly, the oxidation and reduction kinetics of an individual single-layer graphene sheet was studied at different voltages. The electro-redox-induced reversible variation of fluorescence intensity of individual sheets indicates a reversible band gap tuning strategy. Furthermore, correlation analysis of redox rate constants on individual graphene sheets revealed a redox-induced spatiotemporal heterogeneity or dynamics of graphene sheets. The observed controllable redox kinetics can rationally guide the precise band gap tuning of individual graphene sheets and then help their extensive applications in optoelectronics and devices for renewable energy.

  4. Robust adhesion of flower-like few-layer graphene nanoclusters.

    PubMed

    Tian, Shibing; Li, Lin; Sun, Wangning; Xia, Xiaoxiang; Han, Dong; Li, Junjie; Gu, Changzhi

    2012-01-01

    Nanostructured surface possessing ultrahigh adhesion like "gecko foot" or "rose petal" can offer more opportunities for bionic application. We grow flower-like few-layer graphene on silicon nanocone arrays to form graphene nanoclusters, showing robust adhesion. Their contact angle (CA) is 164° with a hysteresis CA of 155° and adhesive force for a 5 μL water droplet is about 254 μN that is far larger than present reported results. We bring experimental evidences that this great adhesion depends on large-area plentiful edges of graphene nanosheets tuned by conical nanostructure and intrinsic wetting features of graphene. Such new hierarchical few-layer graphene nanostructure provides a feasible strategy to understand the ultra-adhesive mechanism of the "gecko effect" or "rose effect" and enhance the wettability of graphene for many practical applications.

  5. Multi-layer graphene on Co(0001) by ethanol chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kazi, H.; Cao, Y.; Tanabe, I.; Driver, M. S.; Dowben, P. A.; Kelber, J. A.

    2014-09-01

    N layer (1 ⩽ N ⩽ 10) monolayer films of graphene were formed by the chemical vapor deposition of ethanol on either clean or oxidized Co(0001) substrates at 1000 K, with no evidence of either interfacial oxide formation or graphene/substrate charge transfer. Low energy electron diffraction data indicate that the graphene layers or domains are azimuthally rotated, but otherwise show the characteristics of graphene with a Raman spectra D/G intensity ratio of 0.25 or less, and a C 1s binding energy of 284.5 eV with an observable π → π* transition. Magneto optic Kerr effect spectra indicate only the ferromagnetic hysteresis with high remanence, with no evidence of Co/graphene exchange bias. This is very different from the negligible remanent magnetization of graphene/Co3O4/Co trilayer structures.

  6. Few-layer graphene characterization by near-field scanning microwave microscopy.

    PubMed

    Talanov, Vladimir V; Del Barga, Christopher; Wickey, Lee; Kalichava, Irakli; Gonzales, Edward; Shaner, Eric A; Gin, Aaron V; Kalugin, Nikolai G

    2010-07-27

    Near-field scanning microwave microscopy is employed for quantitative imaging at 4 GHz of the local impedance for monolayer and few-layer graphene. The microwave response of graphene is found to be thickness dependent and determined by the local sheet resistance of the graphene flake. Calibration of the measurement system and knowledge of the probe geometry allows evaluation of the AC impedance for monolayer and few-layer graphene, which is found to be predominantly active. The use of localized evanescent electromagnetic field in our experiment provides a promising tool for investigations of plasma waves in graphene with wave numbers determined by the spatial spectrum of the near-field. By using near-field microwave microscopy one can perform simultaneous imaging of location, geometry, thickness, and distribution of electrical properties of graphene without a need for device fabrication. PMID:20536187

  7. Robust adhesion of flower-like few-layer graphene nanoclusters

    NASA Astrophysics Data System (ADS)

    Tian, Shibing; Li, Lin; Sun, Wangning; Xia, Xiaoxiang; Han, Dong; Li, Junjie; Gu, Changzhi

    2012-07-01

    Nanostructured surface possessing ultrahigh adhesion like ``gecko foot'' or ``rose petal'' can offer more opportunities for bionic application. We grow flower-like few-layer graphene on silicon nanocone arrays to form graphene nanoclusters, showing robust adhesion. Their contact angle (CA) is 164° with a hysteresis CA of 155° and adhesive force for a 5 μL water droplet is about 254 μN that is far larger than present reported results. We bring experimental evidences that this great adhesion depends on large-area plentiful edges of graphene nanosheets tuned by conical nanostructure and intrinsic wetting features of graphene. Such new hierarchical few-layer graphene nanostructure provides a feasible strategy to understand the ultra-adhesive mechanism of the ``gecko effect'' or ``rose effect'' and enhance the wettability of graphene for many practical applications.

  8. Thermoacoustic and photoacoustic characterizations of few-layer graphene by pulsed excitations

    NASA Astrophysics Data System (ADS)

    Wang, Xiong; Witte, Russell S.; Xin, Hao

    2016-04-01

    We characterized the thermoacoustic and photoacoustic properties of large-area, few-layer graphene by pulsed microwave and optical excitations. Due to its high electric conductivity and low heat capacity per unit area, graphene lends itself to excellent microwave and optical energy absorption and acoustic signal emanation due to the thermoacoustic effect. When exposed to pulsed microwave or optical radiation, distinct thermoacoustic and photoacoustic signals generated by the few-layer graphene are obtained due to microwave and laser absorption of the graphene, respectively. Clear thermoacoustic and photoacoustic images of large-area graphene sample are achieved. A numerical model is developed and the simulated results are in good accordance with the measured ones. This characterization work may find applications in ultrasound generator and detectors for microwave and optical radiation. It may also become an alternative characterization approach for graphene and other types of two-dimensional materials.

  9. Graphene-silicon layered structures on single-crystalline Ir(111) thin films

    SciTech Connect

    Que, Yande D.; Tao, Jing; Zhang, Yong; Wang, Yeliang L.; Wu, Lijun J.; Zhu, Yimei M.; Kim, Kisslinger; Weinl, Michael; Schreck, Matthias; Shen, Chengmin M.; Du, Shixuan X.; Liu, Yunqi Q.; Gao, H. -J.; Huang, Li; Xu, Wenyan Y.

    2015-01-20

    Epitaxial growth of graphene on transition metal crystals, such as Ru,⁽¹⁻³⁾ Ir,⁽⁴⁻⁶⁾ and Ni,⁽⁷⁾ provides large-area, uniform graphene layers with controllable defect density, which is crucial for practical applications in future devices. To decrease the high cost of single-crystalline metal bulks, single-crystalline metal films are strongly suggested as the substrates for epitaxial growth large-scale high-quality graphene.⁽⁸⁻¹⁰⁾ Moreover, in order to weaken the interactions of graphene with its metal host, which may result in a suppression of the intrinsic properties of graphene,⁽¹¹ ¹²⁾ the method of element intercalation of semiconductors at the interface between an epitaxial graphene layer and a transition metal substrate has been successfully realized.⁽¹³⁻¹⁶⁾

  10. Graphene-silicon layered structures on single-crystalline Ir(111) thin films

    DOE PAGES

    Que, Yande D.; Tao, Jing; Zhang, Yong; Wang, Yeliang L.; Wu, Lijun J.; Zhu, Yimei M.; Kim, Kisslinger; Weinl, Michael; Schreck, Matthias; Shen, Chengmin M.; et al

    2015-01-20

    Epitaxial growth of graphene on transition metal crystals, such as Ru,⁽¹⁻³⁾ Ir,⁽⁴⁻⁶⁾ and Ni,⁽⁷⁾ provides large-area, uniform graphene layers with controllable defect density, which is crucial for practical applications in future devices. To decrease the high cost of single-crystalline metal bulks, single-crystalline metal films are strongly suggested as the substrates for epitaxial growth large-scale high-quality graphene.⁽⁸⁻¹⁰⁾ Moreover, in order to weaken the interactions of graphene with its metal host, which may result in a suppression of the intrinsic properties of graphene,⁽¹¹ ¹²⁾ the method of element intercalation of semiconductors at the interface between an epitaxial graphene layer and a transitionmore » metal substrate has been successfully realized.⁽¹³⁻¹⁶⁾« less

  11. Observing the Heterogeneous Electro-redox of Individual Single-Layer Graphene Sheets.

    PubMed

    Chen, Tao; Zhang, Yuwei; Xu, Weilin

    2016-09-27

    Electro-redox-induced heterogeneous fluorescence of an individual single-layer graphene sheet was observed in real time by a total internal reflection fluorescence microscope. It was found that the fluorescence intensity of an individual sheet can be tuned reversibly by applying periodic voltages to control the redox degree of graphene sheets. Accordingly, the oxidation and reduction kinetics of an individual single-layer graphene sheet was studied at different voltages. The electro-redox-induced reversible variation of fluorescence intensity of individual sheets indicates a reversible band gap tuning strategy. Furthermore, correlation analysis of redox rate constants on individual graphene sheets revealed a redox-induced spatiotemporal heterogeneity or dynamics of graphene sheets. The observed controllable redox kinetics can rationally guide the precise band gap tuning of individual graphene sheets and then help their extensive applications in optoelectronics and devices for renewable energy. PMID:27552441

  12. Graphene-like two-dimensional layered nanomaterials: applications in biosensors and nanomedicine

    NASA Astrophysics Data System (ADS)

    Yang, Guohai; Zhu, Chengzhou; Du, Dan; Zhu, Junjie; Lin, Yuehe

    2015-08-01

    The development of nanotechnology provides promising opportunities for various important applications. The recent discovery of atomically-thick two-dimensional (2D) nanomaterials can offer manifold perspectives to construct versatile devices with high-performance to satisfy multiple requirements. Many studies directed at graphene have stimulated renewed interest on graphene-like 2D layered nanomaterials (GLNs). GLNs including boron nitride nanosheets, graphitic-carbon nitride nanosheets and transition metal dichalcogenides (e.g. MoS2 and WS2) have attracted significant interest in numerous research fields from physics and chemistry to biology and engineering, which has led to numerous interdisciplinary advances in nano science. Benefiting from the unique physical and chemical properties (e.g. strong mechanical strength, high surface area, unparalleled thermal conductivity, remarkable biocompatibility and ease of functionalization), these 2D layered nanomaterials have shown great potential in biochemistry and biomedicine. This review summarizes recent advances of GLNs in applications of biosensors and nanomedicine, including electrochemical biosensors, optical biosensors, bioimaging, drug delivery and cancer therapy. Current challenges and future perspectives in these rapidly developing areas are also outlined. It is expected that they will have great practical foundation in biomedical applications with future efforts.

  13. Imaging layer number and stacking order through formulating Raman fingerprints obtained from hexagonal single crystals of few layer graphene

    NASA Astrophysics Data System (ADS)

    Hwang, Jih-Shang; Lin, Yu-Hsiang; Hwang, Jeong-Yuan; Chang, Railing; Chattopadhyay, Surojit; Chen, Chang-Jiang; Chen, Peilin; Chiang, Hai-Pang; Tsai, Tsong-Ru; Chen, Li-Chyong; Chen, Kuei-Hsien

    2013-01-01

    Quantitative mapping of layer number and stacking order for CVD-grown graphene layers is realized by formulating Raman fingerprints obtained on two stepwise stacked graphene single-crystal domains with AB Bernal and turbostratic stacking (with ˜30°interlayer rotation), respectively. The integrated peak area ratio of the G band to the Si band, AG/ASi, is proven to be a good fingerprint for layer number determination, while the area ratio of the 2D and G bands, A2D/AG, is shown to differentiate effectively between the two different stacking orders. The two fingerprints are well formulated and resolve, quantitatively, the layer number and stacking type of various graphene domains that used to rely on tedious transmission electron microscopy for structural analysis. The approach is also noticeable in easy discrimination of the turbostratic graphene region (˜30° rotation), the structure of which resembles the well known high-mobility graphene R30/R2± fault pairs found on the vacuum-annealed C-face SiC and suggests an electron mobility reaching 14 700 cm3 V-1 s-1. The methodology may shed light on monitoring and control of high-quality graphene growth, and thereby facilitate future mass production of potential high-speed graphene applications.

  14. Layer-by-layer assembly of functionalized reduced graphene oxide for direct electrochemistry and glucose detection.

    PubMed

    Mascagni, Daniela Branco Tavares; Miyazaki, Celina Massumi; da Cruz, Nilson Cristino; de Moraes, Marli Leite; Riul, Antonio; Ferreira, Marystela

    2016-11-01

    We report an electrochemical glucose biosensor made with layer-by-layer (LbL) films of functionalized reduced graphene oxide (rGO) and glucose oxidase (GOx). The LbL assembly using positively and negatively charged rGO multilayers represents a simple approach to develop enzymatic biosensors. The electron transport properties of graphene were combined with the specificity provided by the enzyme. rGO was obtained and functionalized using chemical methods, being positively charged with poly(diallyldimethylammonium chloride) to form GPDDA, and negatively charged with poly(styrene sulfonate) to form GPSS. Stable aqueous dispersions of GPDDA and GPSS are easily obtained, enabling the growth of LbL films on various solid supports. The use of graphene in the immobilization of GOx promoted Direct Electron Transfer, which was evaluated by Cyclic Voltammetry. Amperometric measurements indicated a detection limit of 13.4μmol·L(-1) and sensitivity of 2.47μA·cm(-2)·mmol(-1)·L for glucose with the (GPDDA/GPSS)1/(GPDDA/GOx)2 architecture, whose thickness was 19.80±0.28nm, as determined by Surface Plasmon Resonance (SPR). The sensor may be useful for clinical analysis since glucose could be detected even in the presence of typical interfering agents and in real samples of a lactose-free milk and an electrolyte solution to prevent dehydration. PMID:27524075

  15. Sprayable, Paintable Layer-by-Layer Polyaniline Nanofiber/Graphene Electrodes for Electrochemical Energy Storage

    NASA Astrophysics Data System (ADS)

    Kwon, Se Ra; Jeon, Ju-Won; Lutkenhus, Jodie

    2015-03-01

    Sprayable batteries are growing in interest for applications in structural energy storage and power or flexible power. Spray-assisted layer-by-layer (LbL) assembly, in which complementary species are alternately sprayed onto a surface, is particularly amenable toward this application. Here, we report on the fabrication of composite films containing polyaniline nanofibers (PANI NF) and graphene oxide (GO) sheets fabricated via spray-assisted LbL assembly. The resulting films are electrochemical reduced to yield PANI NF/electrochemically reduced graphene (ERGO) electrodes for use as a cathode in non-aqueous energy storage systems. Through the spray-assisted LbL process, the hybrid electrodes could be fabricated 74 times faster than competing dip-assisted LbL assembly. The resulting electrodes are highly porous (0.72 void fraction), and are comprised of 67 wt% PANI NF and 33 wt% ERGO. The sprayed electrodes showed better rate capability, higher specific power, as well as more stable cycle life than dip-assisted LbL electrodes. It is shown here that the spray-assisted LbL approach is well-suited towards the fabrication of paintable electrodes containing polyaniline nanofibers and electrochemically reduced graphene oxide sheets.

  16. Highly ordered ultralong magnetic nanowires wrapped in stacked graphene layers

    PubMed Central

    El Mel, Abdel-Aziz; Duvail, Jean-Luc; Gautron, Eric; Xu, Wei; Choi, Chang-Hwan; Angleraud, Benoit; Granier, Agnès

    2012-01-01

    Summary We report on the synthesis and magnetic characterization of ultralong (1 cm) arrays of highly ordered coaxial nanowires with nickel cores and graphene stacking shells (also known as metal-filled carbon nanotubes). Carbon-containing nickel nanowires are first grown on a nanograted surface by magnetron sputtering. Then, a post-annealing treatment favors the metal-catalyzed crystallization of carbon into stacked graphene layers rolled around the nickel cores. The observed uniaxial magnetic anisotropy field oriented along the nanowire axis is an indication that the shape anisotropy dominates the dipolar coupling between the wires. We further show that the thermal treatment induces a decrease in the coercivity of the nanowire arrays. This reflects an enhancement of the quality of the nickel nanowires after annealing attributed to a decrease of the roughness of the nickel surface and to a reduction of the defect density. This new type of graphene–ferromagnetic-metal nanowire appears to be an interesting building block for spintronic applications. PMID:23365798

  17. Prediction of structural and mechanical properties of atom-decorated porous graphene via density functional calculations

    NASA Astrophysics Data System (ADS)

    Ansari, Reza; Ajori, Shahram; Malakpour, Sina

    2016-04-01

    The considerable demand for novel materials with specific properties has motivated the researchers to synthesize supramolecular nanostructures through different methods. Porous graphene is the first two-dimensional hydrocarbon synthesized quite recently. This investigation is aimed at studying the mechanical properties of atom-decorated (functionalized) porous graphene by employing density functional theory (DFT) calculation within both local density approximations (LDA) and generalized gradient approximations (GGA). The atoms are selected from period 3 of periodic table as well as Li and O atom from period 2. The results reveal that metallic atoms and noble gases are adsorbed physically on porous graphene and nonmetallic ones form chemical bonds with carbon atom in porous graphene structure. Also, it is shown that, in general, atom decoration reduces the values of mechanical properties such as Young's, bulk and shear moduli as well as Poisson's ratio, and this reduction is more considerable in the case of nonmetallic atoms (chemical adsorption), especially oxygen atoms, as compared to metallic atoms and noble gases (physical adsorption).

  18. Mechanical properties of graphene cantilever from atomic force microscopy and density functional theory.

    PubMed

    Rasuli, R; Iraji Zad, A; Ahadian, M M

    2010-05-01

    We have studied the mechanical properties of a few-layer graphene cantilever (FLGC) using atomic force microscopy (AFM). The mechanical properties of the suspended FLGC over an open hole have been derived from the AFM data. Force displacement curves using the Derjaguin-Müller-Toporov (DMT) and the massless cantilever beam models yield a Young modulus of E(c) approximately 37, E(a) approximately 0.7 TPa and a Hamakar constant of approximately 3 x 10( - 18) J. The threshold force to shear the FLGC was determined from a breaking force and modeling. In addition, we studied a graphene nanoribbon (GNR), which is a system similar to the FLGC; using density functional theory (DFT). The in-plane Young's modulus for the GNRs were calculated from the DFT outcomes approximately 0.82 TPa and the results were compared with the experiment. We found that the Young's modulus and the threshold shearing force are dependent on the direction of applied force and the values are different for zigzag edge and armchair edge GNRs.

  19. Directed self-assembly of block copolymer films on atomically-thin graphene chemical patterns

    PubMed Central

    Chang, Tzu-Hsuan; Xiong, Shisheng; Jacobberger, Robert M.; Mikael, Solomon; Suh, Hyo Seon; Liu, Chi-Chun; Geng, Dalong; Wang, Xudong; Arnold, Michael S.; Ma, Zhenqiang; Nealey, Paul F.

    2016-01-01

    Directed self-assembly of block copolymers is a scalable method to fabricate well-ordered patterns over the wafer scale with feature sizes below the resolution of conventional lithography. Typically, lithographically-defined prepatterns with varying chemical contrast are used to rationally guide the assembly of block copolymers. The directed self-assembly to obtain accurate registration and alignment is largely influenced by the assembly kinetics. Furthermore, a considerably broad processing window is favored for industrial manufacturing. Using an atomically-thin layer of graphene on germanium, after two simple processing steps, we create a novel chemical pattern to direct the assembly of polystyrene-block-poly(methyl methacrylate). Faster assembly kinetics are observed on graphene/germanium chemical patterns than on conventional chemical patterns based on polymer mats and brushes. This new chemical pattern allows for assembly on a wide range of guiding periods and along designed 90° bending structures. We also achieve density multiplication by a factor of 10, greatly enhancing the pattern resolution. The rapid assembly kinetics, minimal topography, and broad processing window demonstrate the advantages of inorganic chemical patterns composed of hard surfaces. PMID:27528258

  20. Directed self-assembly of block copolymer films on atomically-thin graphene chemical patterns.

    PubMed

    Chang, Tzu-Hsuan; Xiong, Shisheng; Jacobberger, Robert M; Mikael, Solomon; Suh, Hyo Seon; Liu, Chi-Chun; Geng, Dalong; Wang, Xudong; Arnold, Michael S; Ma, Zhenqiang; Nealey, Paul F

    2016-01-01

    Directed self-assembly of block copolymers is a scalable method to fabricate well-ordered patterns over the wafer scale with feature sizes below the resolution of conventional lithography. Typically, lithographically-defined prepatterns with varying chemical contrast are used to rationally guide the assembly of block copolymers. The directed self-assembly to obtain accurate registration and alignment is largely influenced by the assembly kinetics. Furthermore, a considerably broad processing window is favored for industrial manufacturing. Using an atomically-thin layer of graphene on germanium, after two simple processing steps, we create a novel chemical pattern to direct the assembly of polystyrene-block-poly(methyl methacrylate). Faster assembly kinetics are observed on graphene/germanium chemical patterns than on conventional chemical patterns based on polymer mats and brushes. This new chemical pattern allows for assembly on a wide range of guiding periods and along designed 90° bending structures. We also achieve density multiplication by a factor of 10, greatly enhancing the pattern resolution. The rapid assembly kinetics, minimal topography, and broad processing window demonstrate the advantages of inorganic chemical patterns composed of hard surfaces.

  1. Directed self-assembly of block copolymer films on atomically-thin graphene chemical patterns

    NASA Astrophysics Data System (ADS)

    Chang, Tzu-Hsuan; Xiong, Shisheng; Jacobberger, Robert M.; Mikael, Solomon; Suh, Hyo Seon; Liu, Chi-Chun; Geng, Dalong; Wang, Xudong; Arnold, Michael S.; Ma, Zhenqiang; Nealey, Paul F.

    2016-08-01

    Directed self-assembly of block copolymers is a scalable method to fabricate well-ordered patterns over the wafer scale with feature sizes below the resolution of conventional lithography. Typically, lithographically-defined prepatterns with varying chemical contrast are used to rationally guide the assembly of block copolymers. The directed self-assembly to obtain accurate registration and alignment is largely influenced by the assembly kinetics. Furthermore, a considerably broad processing window is favored for industrial manufacturing. Using an atomically-thin layer of graphene on germanium, after two simple processing steps, we create a novel chemical pattern to direct the assembly of polystyrene-block-poly(methyl methacrylate). Faster assembly kinetics are observed on graphene/germanium chemical patterns than on conventional chemical patterns based on polymer mats and brushes. This new chemical pattern allows for assembly on a wide range of guiding periods and along designed 90° bending structures. We also achieve density multiplication by a factor of 10, greatly enhancing the pattern resolution. The rapid assembly kinetics, minimal topography, and broad processing window demonstrate the advantages of inorganic chemical patterns composed of hard surfaces.

  2. Directed self-assembly of block copolymer films on atomically-thin graphene chemical patterns.

    PubMed

    Chang, Tzu-Hsuan; Xiong, Shisheng; Jacobberger, Robert M; Mikael, Solomon; Suh, Hyo Seon; Liu, Chi-Chun; Geng, Dalong; Wang, Xudong; Arnold, Michael S; Ma, Zhenqiang; Nealey, Paul F

    2016-01-01

    Directed self-assembly of block copolymers is a scalable method to fabricate well-ordered patterns over the wafer scale with feature sizes below the resolution of conventional lithography. Typically, lithographically-defined prepatterns with varying chemical contrast are used to rationally guide the assembly of block copolymers. The directed self-assembly to obtain accurate registration and alignment is largely influenced by the assembly kinetics. Furthermore, a considerably broad processing window is favored for industrial manufacturing. Using an atomically-thin layer of graphene on germanium, after two simple processing steps, we create a novel chemical pattern to direct the assembly of polystyrene-block-poly(methyl methacrylate). Faster assembly kinetics are observed on graphene/germanium chemical patterns than on conventional chemical patterns based on polymer mats and brushes. This new chemical pattern allows for assembly on a wide range of guiding periods and along designed 90° bending structures. We also achieve density multiplication by a factor of 10, greatly enhancing the pattern resolution. The rapid assembly kinetics, minimal topography, and broad processing window demonstrate the advantages of inorganic chemical patterns composed of hard surfaces. PMID:27528258

  3. Numerical simulation of multi-layer graphene structures based on quantum-chemical model

    NASA Astrophysics Data System (ADS)

    Kasper, Y.; Tuchin, A.; Bokova, A.; Bityutskaya, L.

    2016-08-01

    The electronic structure of the multi-layer graphene has been studied using the density functional theory (DFT). The dependence of the average interlayer distance on the number of layers (n = 2 ÷ 6) has been determined. The analysis of the charge redistribution and the electron density of the bi- and three-layer graphene under the external pressure up to 50 GPa has been performed. The model of the interlayer conductivity of compressed multigraphene was offered

  4. Room temperature broadband terahertz gains in graphene heterostructures based on inter-layer radiative transitions

    SciTech Connect

    Tang, Linlong; Du, Jinglei; Shi, Haofei Wei, Dongshan; Du, Chunlei

    2014-10-15

    We exploit inter-layer radiative transitions to provide gains to amplify terahertz waves in graphene heterostructures. This is achieved by properly doping graphene sheets and aligning their energy bands so that the processes of stimulated emissions can overwhelm absorptions. We derive an expression for the gain estimation and show the gain is insensitive to temperature variation. Moreover, the gain is broadband and can be strong enough to compensate the free carrier loss, indicating graphene based room temperature terahertz lasers are feasible.

  5. USE OF ATOMIC LAYER DEPOSITION OF FUNCTIONALIZATION OF NANOPOROUS BIOMATERIALS

    SciTech Connect

    Brigmon, R.; Narayan, R.; Adiga, S.; Pellin, M.; Curtiss, L.; Stafslien, S.; Chisholm, B.; Monteiro-Riviere, N.; Elam, J.

    2010-02-08

    Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials.

  6. Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns.

    PubMed

    Niu, Gang; Capellini, Giovanni; Lupina, Grzegorz; Niermann, Tore; Salvalaglio, Marco; Marzegalli, Anna; Schubert, Markus Andreas; Zaumseil, Peter; Krause, Hans-Michael; Skibitzki, Oliver; Lehmann, Michael; Montalenti, Francesco; Xie, Ya-Hong; Schroeder, Thomas

    2016-01-27

    Dislocation networks are one of the most principle sources deteriorating the performances of devices based on lattice-mismatched heteroepitaxial systems. We demonstrate here a technique enabling fully coherent germanium (Ge) islands selectively grown on nanotip-patterned Si(001) substrates. The silicon (Si)-tip-patterned substrate, fabricated by complementary metal oxide semiconductor compatible nanotechnology, features ∼50-nm-wide Si areas emerging from a SiO2 matrix and arranged in an ordered lattice. Molecular beam epitaxy growths result in Ge nanoislands with high selectivity and having homogeneous shape and size. The ∼850 °C growth temperature required for ensuring selective growth has been shown to lead to the formation of Ge islands of high crystalline quality without extensive Si intermixing (with 91 atom % Ge). Nanotip-patterned wafers result in geometric, kinetic-diffusion-barrier intermixing hindrance, confining the major intermixing to the pedestal region of Ge islands, where kinetic diffusion barriers are, however, high. Theoretical calculations suggest that the thin Si/Ge layer at the interface plays, nevertheless, a significant role in realizing our fully coherent Ge nanoislands free from extended defects especially dislocations. Single-layer graphene/Ge/Si-tip Schottky junctions were fabricated, and thanks to the absence of extended defects in Ge islands, they demonstrate high-performance photodetection characteristics with responsivity of ∼45 mA W(-1) and an Ion/Ioff ratio of ∼10(3). PMID:26709534

  7. Designing nanoscale constructs from atomic thin sheets of graphene, boron nitride and gold nanoparticles for advanced material applications

    NASA Astrophysics Data System (ADS)

    Jasuja, Kabeer

    2011-12-01

    ' interaction with graphene, and applied to address the challenge of dispersing bare-surfaced GNPs for efficient liquid-phase catalysis. We also revisited the functionalization of graphene and present a non-invasive surface introduction of interfaceable moieties. Isostructural to graphene, ultrathin BN sheet is another atomic-thick nanomaterial possessing a highly diverse set of properties inconceivable from graphene. Exfoliating UTBNSs has been challenging due to their exceptional intersheet-bonding and chemical-inertness. To develop applications of BN monolayers and evolve research, a facile lab-scale approach was desired that can produce processable dispersions of BN monolayers. We demonstrated a novel chlorosulfonic acid based treatment that resulted in protonation assisted layer-by-layer exfoliation of BN monolayers with highest reported yields till date. Further, the BN monolayers exhibited extensively protonated N centers, which are utilized for chemically interfacing GNPs, demonstrating their ability to act as excellent nano-templates. The scientific details obtained from the research shown here will significantly support current research activities and greatly impact their future applications. Our research findings have been published in ACS Nano, Small, Journal of Physical Chemistry Letters, MRS Proceedings and have gathered >45 citations.

  8. Multi-layer graphene membrane based memory cell

    NASA Astrophysics Data System (ADS)

    Siahlo, Andrei I.; Popov, Andrey M.; Poklonski, Nikolai A.; Lozovik, Yurii E.; Vyrko, Sergey A.; Ratkevich, Sergey V.

    2016-10-01

    The scheme and operational principles of the nanoelectromechanical memory cell based on the bending of a multi-layer graphene membrane by the electrostatic force are proposed. An analysis of the memory cell total energy as a function of the memory cell sizes is used to determine the sizes corresponding to a bistable memory cell with the conducting ON and non-conducting OFF states and to calculate the switching voltage between the OFF and ON states. It is shown that a potential barrier between the OFF and ON states is huge for practically all sizes of a bistable memory cell which excludes spontaneous switching and allows the proposed memory cell to be used for long-term archival storage.

  9. Graphene Layer Growth: Collision of Migrating Five-MemberRings

    SciTech Connect

    Whitesides, Russell; Kollias, Alexander C.; Domin, Dominik; Lester Jr., William A.; Frenklach, Michael

    2005-12-02

    A reaction pathway is explored in which two cyclopenta groups combine on the zigzag edge of a graphene layer. The process is initiated by H addition to a five-membered ring, followed by opening of that ring and the formation of a six-membered ring adjacent to another five-membered ring. The elementary steps of the migration pathway are analyzed using density functional theory to examine the region of the potential energy surface associated with the pathway. The calculations are performed on a substrate modeled by the zigzag edge of tetracene. Based on the obtained energetics, the dynamics of the system are analyzed by solving the energy transfer master equations. The results indicate energetic and reaction-rate similarity between the cyclopenta combination and migration reactions. Also examined in the present study are desorption rates of migrating cyclopenta rings which are found to be comparable to cyclopenta ring migration.

  10. Electrochemically Produced Graphene for Microporous Layers in Fuel Cells.

    PubMed

    Najafabadi, Amin Taheri; Leeuwner, Magrieta J; Wilkinson, David P; Gyenge, Előd L

    2016-07-01

    The microporous layer (MPL) is a key cathodic component in proton exchange membrane fuel cells owing to its beneficial influence on two-phase mass transfer. However, its performance is highly dependent on material properties such as morphology, porous structure, and electrical resistance. To improve water management and performance, electrochemically exfoliated graphene (EGN) microsheets are considered as an alternative to the conventional carbon black (CB) MPLs. The EGN-based MPLs decrease the kinetic overpotential and the Ohmic potential loss, whereas the addition of CB to form a composite EGN+CB MPL improves the mass-transport limiting current density drastically. This is reflected by increases of approximately 30 and 70 % in peak power densities at 100 % relative humidity (RH) compared with those for CB- and EGN-only MPLs, respectively. The composite EGN+CB MPL also retains the superior performance at a cathode RH of 20 %, whereas the CB MPL shows significant performance loss. PMID:27254459

  11. Environmental Synthesis of Few Layers Graphene Sheets Using Ultrasonic Exfoliation with Enhanced Electrical and Thermal Properties.

    PubMed

    Noroozi, Monir; Zakaria, Azmi; Radiman, Shahidan; Abdul Wahab, Zaidan

    2016-01-01

    In this paper, we report how few layers graphene that can be produced in large quantity with low defect ratio from exfoliation of graphite by using a high intensity probe sonication in water containing liquid hand soap and PVP. It was founded that the graphene powder obtained by this simple exfoliation method after the heat treatment had an excellent exfoliation into a single or layered graphene sheets. The UV-visible spectroscopy, FESEM, TEM, X-ray powder diffraction and Raman spectroscopy was used to analyse the graphene product. The thermal diffusivity of the samples was analysed using a highly accurate thermal-wave cavity photothermal technique. The data obtained showed excellent enhancement in the thermal diffusivity of the graphene dispersion. This well-dispersed graphene was then used to fabricate an electrically conductive polymer-graphene film composite. The results demonstrated that this low cost and environmental friendly technique allowed to the production of high quality layered graphene sheets, improved the thermal and electrical properties. This may find use in the wide range of applications based on graphene. PMID:27064575

  12. Environmental Synthesis of Few Layers Graphene Sheets Using Ultrasonic Exfoliation with Enhanced Electrical and Thermal Properties.

    PubMed

    Noroozi, Monir; Zakaria, Azmi; Radiman, Shahidan; Abdul Wahab, Zaidan

    2016-01-01

    In this paper, we report how few layers graphene that can be produced in large quantity with low defect ratio from exfoliation of graphite by using a high intensity probe sonication in water containing liquid hand soap and PVP. It was founded that the graphene powder obtained by this simple exfoliation method after the heat treatment had an excellent exfoliation into a single or layered graphene sheets. The UV-visible spectroscopy, FESEM, TEM, X-ray powder diffraction and Raman spectroscopy was used to analyse the graphene product. The thermal diffusivity of the samples was analysed using a highly accurate thermal-wave cavity photothermal technique. The data obtained showed excellent enhancement in the thermal diffusivity of the graphene dispersion. This well-dispersed graphene was then used to fabricate an electrically conductive polymer-graphene film composite. The results demonstrated that this low cost and environmental friendly technique allowed to the production of high quality layered graphene sheets, improved the thermal and electrical properties. This may find use in the wide range of applications based on graphene.

  13. Environmental Synthesis of Few Layers Graphene Sheets Using Ultrasonic Exfoliation with Enhanced Electrical and Thermal Properties

    PubMed Central

    Noroozi, Monir; Zakaria, Azmi; Radiman, Shahidan; Abdul Wahab, Zaidan

    2016-01-01

    In this paper, we report how few layers graphene that can be produced in large quantity with low defect ratio from exfoliation of graphite by using a high intensity probe sonication in water containing liquid hand soap and PVP. It was founded that the graphene powder obtained by this simple exfoliation method after the heat treatment had an excellent exfoliation into a single or layered graphene sheets. The UV-visible spectroscopy, FESEM, TEM, X-ray powder diffraction and Raman spectroscopy was used to analyse the graphene product. The thermal diffusivity of the samples was analysed using a highly accurate thermal-wave cavity photothermal technique. The data obtained showed excellent enhancement in the thermal diffusivity of the graphene dispersion. This well-dispersed graphene was then used to fabricate an electrically conductive polymer-graphene film composite. The results demonstrated that this low cost and environmental friendly technique allowed to the production of high quality layered graphene sheets, improved the thermal and electrical properties. This may find use in the wide range of applications based on graphene. PMID:27064575

  14. Phosphorus and nitrogen dual-doped few-layered porous graphene: a high-performance anode material for lithium-ion batteries.

    PubMed

    Ma, Xinlong; Ning, Guoqing; Qi, Chuanlei; Xu, Chenggen; Gao, Jinsen

    2014-08-27

    Few-layered graphene networks composed of phosphorus and nitrogen dual-doped porous graphene (PNG) are synthesized via a MgO-templated chemical vapor deposition (CVD) using (NH4)3PO4 as N and P source. P and N atoms have been substitutionally doped in graphene networks since the doping takes place at the same time with the graphene growth in the CVD process. Raman spectra show that the amount of defects or disorders increases after P and N atoms are incorporated into graphene frameworks. The doping levels of P and N measured by X-ray photoelectron spectroscopy are 0.6 and 2.6 at %, respectively. As anodes for Li ion batteries (LIBs), the PNG electrode exhibits high reversible capacity (2250 mA h g(-1) at the current density of 50 mA g(-1)), excellent rate capability (750 mA h g(-1) at 1000 mA g(-1)), and satisfactory cycling stability (no capacity decay after 1500 cycles), showing much enhanced electrode performance as compared to the undoped few-layered porous graphene. Our results show that the PNG is a promising candidate for anode materials in high-rate LIBs.

  15. Charge neutrality of quasi-free-standing monolayer graphene induced by the intercalated Sn layer

    NASA Astrophysics Data System (ADS)

    Kim, Hidong; Dugerjav, Otgonbayar; Lkhagvasuren, Altaibaatar; Seo, Jae M.

    2016-04-01

    It has been confirmed by angle-resolved photoemission spectroscopy that decoupled quasi-free-standing monolayer graphene (QFMLG), obtained by Sn intercalation between the ≤ft(6\\sqrt{3}× 6\\sqrt{3}\\right)R{{30}{^\\circ}} buffer layer and the 6H-SiC(0 0 0 1) substrate, is charge-neutral, i.e. the Dirac point matches with the Fermi level. By combined studies of scanning tunneling microscopy/spectroscopy and core-level/valence-band photoemission spectroscopy on this system, it has been found that the intercalated Sn atoms, bonding with the Si atoms of the top Si-C bilayer on the substrate comprise a hexagonal 10× 10 layer, which turns out to be metallic. Such a metallic character, which has never been found in intercalation using different elements, is a major cause of charge neutrality of QFMLG, since conduction electrons of the Sn layer compensate completely spontaneous polarization charges of 6H-SiC(0 0 0 1). This charge-neutral QFMLG is stable at a high temperature of 850 °C.

  16. Facile Large Scale Production of Few-Layer Graphene Sheets by Shear Exfoliation in Volatile Solvent.

    PubMed

    Akhtar, M Wasim; Park, Chan Woo; Kim, Youn Sop; Kim, Jong Seok

    2015-12-01

    Few layer graphene sheets were synthesized from natural graphite through mechanical shear mixer in 1-butanol as solvent. The liquid phase exfoliation of graphite through the shear mixer generated incising forces for 20 minutes which changed the large amount of graphite's flake into few layer graphene. The removal of solvent from the deposited dispersion was performed immediately by keeping at the room temperature. The deposited graphene thin films were characterized by AFM, HR-TEM, XRD, FT-IR and Raman Spectroscopy. The HR-TEM results showed the formation of few layers and well dispersed graphene. The Raman spectroscopy and XRD characterization confirmed the good quality and non-oxidized state of graphene. PMID:26682388

  17. Raman Scattering from few-layer Graphene Films

    NASA Astrophysics Data System (ADS)

    Gupta, A.; Joshi, P.; Srinivas, T.; Eklund, Peter

    2006-03-01

    Few layer-graphene sheet (nGL's) films, where n is the number of graphene layers, are new two-dimensional sp^2 carbon systems that have been shown to produce exciting Fractional Quantum Hall phenomena. We report here on the first Raman scattering (RS) results of nGLs. nGLs with lateral dimensions of ˜1-3 μm were prepared by chemical delamination of graphite flake or HOPG and then transferred from solution onto substrates (mica, pyrex,In/pyrex and Au/pyrex). RS spectra have been collected on nGL's with n=1, 2, 3 and compared with the graphite. Graphite exhibits two E2g interlayer modes at 42 cm-1 and 1582 cm-1. The Raman spectra of (n=1-3) nGLs were found to exhibit peaks at 1350 cm-1 and 1620 cm-1, i.e., near frequencies associated with high phonon density of states. The high frequency E2g band is found to split into two bands when the nGL is supported on metallic substrates (In,Au). In both these cases, we observe bands at 1583 cm-1, ˜1592 cm-1 rather than one band at 1581 cm-1 when the nGL is on insulating pyrex. The splitting of the interlayer band when on metallic substrates is identified with charge transfer between the nGL and the substrate. The phonon density of states scattering observed does not appear to be due to disorder in the basal plane.

  18. Design of graphene sheets-supported Pt catalyst layer in PEM fuel cells

    SciTech Connect

    Park, Seh K.; Shao, Yuyan; Wan, Haiying; Rieke, Peter C.; Viswanathan, Vilayanur V.; Towne, Silas A.; Saraf, Laxmikant V.; Liu, Jun; Lin, Yuehe; Wang, Yong

    2011-03-01

    A series of cathodes using Pt supported onto graphene sheets with different contents of carbon black in the catalyst layer were prepared and characterized. Carbon black was added as a spacer between two-dimensional graphene sheets in the catalyst layer to study its effect on the performances of proton exchange membrane fuel cell. Electrochemical properties and surface morphology of the cathodes with and without carbon black were characterized using cyclic voltammetry, ac-impedance spectroscopy, electrochemical polarization technique, and scanning electron microscopy. The results indicated that carbon black effectively modifies the array of graphene supports, resulting in more Pt nanoparticles available for electrochemical reaction and better mass transport in the catalyst layer.

  19. Electronic band structure imaging of three layer twisted graphene on single crystal Cu(111)

    SciTech Connect

    Marquez Velasco, J.; Kelaidis, N.; Xenogiannopoulou, E.; Tsoutsou, D.; Tsipas, P.; Speliotis, Th.; Pilatos, G.; Likodimos, V.; Falaras, P.; Dimoulas, A.; Raptis, Y. S.

    2013-11-18

    Few layer graphene (FLG) is grown on single crystal Cu(111) by Chemical Vapor Deposition, and the electronic valence band structure is imaged by Angle-Resolved Photo-Emission Spectroscopy. It is found that graphene essentially grows polycrystalline. Three nearly ideal Dirac cones are observed along the Cu Γ{sup ¯}K{sup ¯} direction in k-space, attributed to the presence of ∼4° twisted three layer graphene with negligible interlayer coupling. The number of layers and the stacking order are compatible with Raman data analysis demonstrating the complementarity of the two techniques for a more accurate characterization of FLG.

  20. Doping, adsorption, and polarity of atomic-layer materials: A predictive theory from systematic first-principles study

    NASA Astrophysics Data System (ADS)

    Saito, Susumu; Fujimoto, Yoshitaka; Koretsune, Takashi

    2015-03-01

    Based on the extensive first-principles electronic-structure study of various doped hexagonal boron-nitride (h-BN) atomic layers as well as that of various doped graphene and carbon nanotubes, we propose a simple but predictive theory of polarity in doped atomic-layer materials. We first report the electronic structure of the pristine h-BN, h-BN layers with B and B3N vacancies which have been experimentally produced and observed frequently, and doped h-BN layers, and show that both p-type and n-type h-BN layers can be produced in a variety of ways. We next review the electronic structure of doped graphene and carbon nanotubes and the effect of the H adsorption which can even change the polarity of the system. Finally we propose a simple but predictive theory which is based on the number of valence electrons of each system, and can explain the polarities of all the h-BN, graphene, and nanotube-based systems studied so far. Supported by MEXT 25107005 and 25104711, JSPS 22740252 and 26390062, and MEST TIES project.

  1. Contribution of Dielectric Screening to the Total Capacitance of Few-Layer Graphene Electrodes.

    PubMed

    Zhan, Cheng; Jiang, De-en

    2016-03-01

    We apply joint density functional theory (JDFT), which treats the electrode/electrolyte interface self-consistently, to an electric double-layer capacitor (EDLC) based on few-layer graphene electrodes. The JDFT approach allows us to quantify a third contribution to the total capacitance beyond quantum capacitance (CQ) and EDL capacitance (CEDL). This contribution arises from the dielectric screening of the electric field by the surface of the few-layer graphene electrode, and we therefore term it the dielectric capacitance (CDielec). We find that CDielec becomes significant in affecting the total capacitance when the number of graphene layers in the electrode is more than three. Our investigation sheds new light on the significance of the electrode dielectric screening on the capacitance of few-layer graphene electrodes. PMID:26884129

  2. Contribution of dielectric screening to the total capacitance of few-layer graphene electrodes

    DOE PAGES

    Zhan, Cheng; Jiang, De-en

    2016-02-17

    We apply joint density functional theory (JDFT), which treats the electrode/electrolyte interface self-consistently, to an electric double-layer capacitor (EDLC) based on few-layer graphene electrodes. The JDFT approach allows us to quantify a third contribution to the total capacitance beyond quantum capacitance (CQ) and EDL capacitance (CEDL). This contribution arises from the dielectric screening of the electric field by the surface of the few-layer graphene electrode, and we therefore term it the dielectric capacitance (CDielec). We find that CDielec becomes significant in affecting the total capacitance when the number of graphene layers in the electrode is more than three. In conclusion,more » our investigation sheds new light on the significance of the electrode dielectric screening on the capacitance of few-layer graphene electrodes.« less

  3. Synthesis of ethanol-soluble few-layer graphene nanosheets for flexible and transparent conducting composite films.

    PubMed

    Nguyen, D D; Tai, N H; Chueh, Y L; Chen, S Y; Chen, Y J; Kuo, W S; Chou, T W; Hsu, C S; Chen, L J

    2011-07-22

    We report a facile method of preparing few-layer graphene nanosheets (FLGs), which can be soluble in ethanol. Atomic force microscopy and high-resolution transmission electron microscopy studies reveal that FLGs have average thicknesses in the range of 2.6-2.8 nm, corresponding to 8-9 layers. A graphene/nafion composite film has a sheet resistance of 9.70 kΩ/sq at the transmittance of 74.5% (at 550 nm) while the nafion film on polyethylene terephthalate has a sheet resistance of 128 kΩ/sq at transmittance of 90.0%. For the cycling/bending test, almost no change in resistance was exhibited when the film was bent at an angle up to 140°, and no obvious deviation in resistance could be found after 100 bending cycles was applied. In addition, an FLGs-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) composite layer was demonstrated as the effective hole transporting layer to improve the hole transporting ability in an organic photovoltaic device, with which the power conversion efficiency was enhanced from 3.10% to 3.70%. The results demonstrated the promising applications of FLGs on graphene-based electronics, such as transparent electrode and flexible conducting film.

  4. Synthesis of ethanol-soluble few-layer graphene nanosheets for flexible and transparent conducting composite films

    NASA Astrophysics Data System (ADS)

    Nguyen, D. D.; Tai, N. H.; Chueh, Y. L.; Chen, S. Y.; Chen, Y. J.; Kuo, W. S.; Chou, T. W.; Hsu, C. S.; Chen, L. J.

    2011-07-01

    We report a facile method of preparing few-layer graphene nanosheets (FLGs), which can be soluble in ethanol. Atomic force microscopy and high-resolution transmission electron microscopy studies reveal that FLGs have average thicknesses in the range of 2.6-2.8 nm, corresponding to 8-9 layers. A graphene/nafion composite film has a sheet resistance of 9.70 kΩ/sq at the transmittance of 74.5% (at 550 nm) while the nafion film on polyethylene terephthalate has a sheet resistance of 128 kΩ/sq at transmittance of 90.0%. For the cycling/bending test, almost no change in resistance was exhibited when the film was bent at an angle up to 140°, and no obvious deviation in resistance could be found after 100 bending cycles was applied. In addition, an FLGs-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) composite layer was demonstrated as the effective hole transporting layer to improve the hole transporting ability in an organic photovoltaic device, with which the power conversion efficiency was enhanced from 3.10% to 3.70%. The results demonstrated the promising applications of FLGs on graphene-based electronics, such as transparent electrode and flexible conducting film.

  5. Synthesis of few layer graphene by non-transferred arc plasma system.

    PubMed

    Baek, Jong-Jun; Kim, Tae-Hee; Park, Dong-Wha

    2013-11-01

    Graphene has recently been the focus of a great deal of attention owing to its outstanding properties, which include high mobility, high thermal conductivity and high structural stability. In this study, a few layer graphene was successfully synthesized from methane gas using a non-transferred direct current arc plasma system. Non-transferred thermal plasma offers high temperature, steep temperature gradient and high enthalpy to enhance the reaction kinetics of graphene synthesis. In order to prepare high quality few layer graphene, graphene products synthesized under several conditions was analyzed comparatively. Effects of gap distance between the plasma torch and graphite substrate, the flow rate of additional reactant gas, and different types of plasma forming gas on the synthesis of few layer graphene were investigated. Methane gas was injected into the plasma jet as a carbon source for the synthesis of graphene and a thermal plasma jet was generated by pure argon or a mixture of argon-hydrogen. The results revealed that hydrogen gas improved the quality of few layer graphene by inducing surface etching and increasing plasma power. PMID:24245266

  6. Synthesis of few layer graphene by non-transferred arc plasma system.

    PubMed

    Baek, Jong-Jun; Kim, Tae-Hee; Park, Dong-Wha

    2013-11-01

    Graphene has recently been the focus of a great deal of attention owing to its outstanding properties, which include high mobility, high thermal conductivity and high structural stability. In this study, a few layer graphene was successfully synthesized from methane gas using a non-transferred direct current arc plasma system. Non-transferred thermal plasma offers high temperature, steep temperature gradient and high enthalpy to enhance the reaction kinetics of graphene synthesis. In order to prepare high quality few layer graphene, graphene products synthesized under several conditions was analyzed comparatively. Effects of gap distance between the plasma torch and graphite substrate, the flow rate of additional reactant gas, and different types of plasma forming gas on the synthesis of few layer graphene were investigated. Methane gas was injected into the plasma jet as a carbon source for the synthesis of graphene and a thermal plasma jet was generated by pure argon or a mixture of argon-hydrogen. The results revealed that hydrogen gas improved the quality of few layer graphene by inducing surface etching and increasing plasma power.

  7. Atoms confined by very thin layers

    SciTech Connect

    Tušek, Matěj

    2014-11-15

    The Hamiltonian of an atom with N electrons and a fixed nucleus of infinite mass between two parallel planes is considered in the limit when the distance a between the planes tends to zero. We show that this Hamiltonian converges in the norm resolvent sense to a Schrödinger operator acting effectively in L{sup 2}(R{sup 2N}) whose potential part depends on a. Moreover, we prove that after an appropriate regularization this Schrödinger operator tends, again in the norm resolvent sense, to the Hamiltonian of a two-dimensional atom (with the three-dimensional Coulomb potential-one over distance) as a → 0. This makes possible to locate the discrete spectrum of the full Hamiltonian once we know the spectrum of the latter one. Our results also provide a mathematical justification for the interest in the two-dimensional atoms with the three-dimensional Coulomb potential.

  8. Determination of the geometric corrugation of graphene on SiC(0001) by grazing incidence fast atom diffraction

    SciTech Connect

    Zugarramurdi, A.; Debiossac, M.; Lunca-Popa, P.; Mayne, A. J.; Borisov, A. G.; Mu, Z.; Roncin, P.; Khemliche, H.; Momeni, A.

    2015-03-09

    We present a grazing incidence fast atom diffraction (GIFAD) study of monolayer graphene on 6H-SiC(0001). This system shows a Moiré-like 13 × 13 superlattice above the reconstructed carbon buffer layer. The averaging property of GIFAD results in electronic and geometric corrugations that are well decoupled; the graphene honeycomb corrugation is only observed with the incident beam parallel to the zigzag direction while the geometric corrugation arising from the superlattice is revealed along the armchair direction. Full-quantum calculations of the diffraction patterns show the very high GIFAD sensitivity to the amplitude of the surface corrugation. The best agreement between the calculated and measured diffraction intensities yields a corrugation height of 0.27 ± 0.03 Å.

  9. Large scale atomistic simulation of single-layer graphene growth on Ni(111) surface: molecular dynamics simulation based on a new generation of carbon-metal potential.

    PubMed

    Xu, Ziwei; Yan, Tianying; Liu, Guiwu; Qiao, Guanjun; Ding, Feng

    2016-01-14

    To explore the mechanism of graphene chemical vapor deposition (CVD) growth on a catalyst surface, a molecular dynamics (MD) simulation of carbon atom self-assembly on a Ni(111) surface based on a well-designed empirical reactive bond order potential was performed. We simulated single layer graphene with recorded size (up to 300 atoms per super-cell) and reasonably good quality by MD trajectories up to 15 ns. Detailed processes of graphene CVD growth, such as carbon atom dissolution and precipitation, formation of carbon chains of various lengths, polygons and small graphene domains were observed during the initial process of the MD simulation. The atomistic processes of typical defect healing, such as the transformation from a pentagon into a hexagon and from a pentagon-heptagon pair (5|7) to two adjacent hexagons (6|6), were revealed as well. The study also showed that higher temperature and longer annealing time are essential to form high quality graphene layers, which is in agreement with experimental reports and previous theoretical results.

  10. Large scale atomistic simulation of single-layer graphene growth on Ni(111) surface: molecular dynamics simulation based on a new generation of carbon-metal potential.

    PubMed

    Xu, Ziwei; Yan, Tianying; Liu, Guiwu; Qiao, Guanjun; Ding, Feng

    2016-01-14

    To explore the mechanism of graphene chemical vapor deposition (CVD) growth on a catalyst surface, a molecular dynamics (MD) simulation of carbon atom self-assembly on a Ni(111) surface based on a well-designed empirical reactive bond order potential was performed. We simulated single layer graphene with recorded size (up to 300 atoms per super-cell) and reasonably good quality by MD trajectories up to 15 ns. Detailed processes of graphene CVD growth, such as carbon atom dissolution and precipitation, formation of carbon chains of various lengths, polygons and small graphene domains were observed during the initial process of the MD simulation. The atomistic processes of typical defect healing, such as the transformation from a pentagon into a hexagon and from a pentagon-heptagon pair (5|7) to two adjacent hexagons (6|6), were revealed as well. The study also showed that higher temperature and longer annealing time are essential to form high quality graphene layers, which is in agreement with experimental reports and previous theoretical results. PMID:26658834

  11. Determining charge state of graphene vacancy by noncontact atomic force microscopy and first-principles calculations

    NASA Astrophysics Data System (ADS)

    Liu, Y.; Weinert, M.; Li, L.

    2015-01-01

    Graphene vacancies are engineered for novel functionalities, however, the charge state of these defects, the key parameter that is vital to charge transfer during chemical reactions and carrier scattering, is generally unknown. Here, we carried out atomic resolution imaging of graphene vacancy defects created by Ar plasma using noncontact atomic force microscopy, and made the first determination of their charge state by local contact potential difference measurements. Combined with density functional theory calculations, we show that graphene vacancies are typically positively charged, with size-dependent charge states that are not necessarily integer-valued. These findings provide new insights into carrier scattering by vacancy defects in graphene, as well as its functionalization for chemical sensing and catalysis, and underline the tunability of these functions by controlling the size of vacancy defect.

  12. Single layer nano graphene platelets derived from graphite nanofibres

    NASA Astrophysics Data System (ADS)

    Huang, Kai; Delport, Géraud; Orcin-Chaix, Lucile; Drummond, Carlos; Lauret, Jean-Sebastien; Penicaud, Alain

    2016-04-01

    Solutions of calibrated nanographenides (negatively charged nanographenes) are obtained by dissolution of graphite nanofibre intercalation compounds (GNFICs). Deposits show homogeneous unfolded nanographene platelets of 1 to 2 layers thickness and 10 nm lateral size, evidenced by atomic force microscopy and Raman spectroscopy. Upon oxidation, nanographenide solutions exhibit strong photoluminescence.Solutions of calibrated nanographenides (negatively charged nanographenes) are obtained by dissolution of graphite nanofibre intercalation compounds (GNFICs). Deposits show homogeneous unfolded nanographene platelets of 1 to 2 layers thickness and 10 nm lateral size, evidenced by atomic force microscopy and Raman spectroscopy. Upon oxidation, nanographenide solutions exhibit strong photoluminescence. Electronic supplementary information (ESI) available: Raman, SEM, TEM and XPS characterization of the raw nanofibres, detailed XPS spectra analysis of deposits from GNFIC/THF and GNFIC/NMP solutions, Raman and AFM characterization of fresh and aged solutions of nanofibres obtained from 3 different suppliers. See DOI: 10.1039/c6nr01512c

  13. A theoretical study of symmetry-breaking organic overlayers on single- and bi-layer graphene

    NASA Astrophysics Data System (ADS)

    Morales-Cifuentes, Josue; Einstein, T. L.

    2013-03-01

    An ``overlayer'' of molecules that breaks the AB symmetry of graphene can produce (modify) a band gap in single- (bi-) layer graphene.[2] Since the triangular shaped trimesic acid (TMA) molecule forms two familiar symmetry breaking configurations, we are motivated to model TMA physisorption on graphene surfaces in conjunction with experiments by Groce et al. at UMD. Using VASP, with ab initio van der Waals density functionals (vdW-DF), we simulate adsorption of TMA onto a graphene surface in several symmetry-breaking arrangements in order to predict/understand the effect of TMA adsorption on experimental observables. Supported by NSF-MRSEC Grant DMR 05-20471.

  14. Coatings of nanostructured pristine graphene-IrOx hybrids for neural electrodes: Layered stacking and the role of non-oxygenated graphene.

    PubMed

    Pérez, E; Lichtenstein, M P; Suñol, C; Casañ-Pastor, N

    2015-10-01

    The need to enhance charge capacity in neural stimulation-electrodes is promoting the formation of new materials and coatings. Among all the possible types of graphene, pristine graphene prepared by graphite electrochemical exfoliation, is used in this work to form a new nanostructured IrOx-graphene hybrid (IrOx-eG). Graphene is stabilized in suspension by IrOx nanoparticles without surfactants. Anodic electrodeposition results in coatings with much smaller roughness than IrOx-graphene oxide. Exfoliated pristine graphene (eG), does not electrodeposit in absence of iridium, but IrOx-nanoparticle adhesion on graphene flakes drives the process. IrOx-eG has a significantly different electronic state than graphene oxide, and different coordination for carbon. Electron diffraction shows the reflection features expected for graphene. IrOx 1-2 nm cluster/nanoparticles are oxohydroxo-species and adhere to 10nm graphene platelets. eG induces charge storage capacity values five times larger than in pure IrOx, and if calculated per carbon atom, this enhancement is one order magnitude larger than the induced by graphene oxide. IrOx-eG coatings show optimal in vitro neural cell viability and function as cell culture substrates. The fully straightforward electrochemical exfoliation and electrodeposition constitutes a step towards the application of graphene in biomedical systems, expanding the knowledge of pristine graphene vs. graphene oxide, in bioelectrodes.

  15. Structural Analysis and Direct Imaging of Rotational Stacking Faults in Few-Layer Graphene Synthesized from Solid Botanical Precursor

    NASA Astrophysics Data System (ADS)

    Kalita, Golap; Wakita, Koichi; Umeno, Masayoshi

    2011-07-01

    Here, we report the structural analysis and rotational stacking faults of few-layer graphene sheets derived by the controlled pyrolysis of the solid botanical derivative camphor (C10H16O). The second-order Raman spectra of the sheets show that the graphene layers are more than one single layer, and the numbers of layers can be controlled by adjusting the amount of camphor pyrolyzed. Transmission electron microscopy images show a minimum of 3 layers for thinner graphene sheets and a maximum of 12 layers for thicker graphene sheets. Low-voltage aberration-corrected high-resolution transmission electron microscopy is also carried out to gain insight into the hexagonal structure and stacking of graphene layers. The transmission electron microscopy study showed the presence of moiré patterns with a relative rotation between graphene layers.

  16. In-situ observation and atomic resolution imaging of the ion irradiation induced amorphisation of graphene

    PubMed Central

    Pan, C.-T.; Hinks, J. A.; Ramasse, Q. M.; Greaves, G.; Bangert, U.; Donnelly, S. E.; Haigh, S. J.

    2014-01-01

    Ion irradiation has been observed to induce a macroscopic flattening and in-plane shrinkage of graphene sheets without a complete loss of crystallinity. Electron diffraction studies performed during simultaneous in-situ ion irradiation have allowed identification of the fluence at which the graphene sheet loses long-range order. This approach has facilitated complementary ex-situ investigations, allowing the first atomic resolution scanning transmission electron microscopy images of ion-irradiation induced graphene defect structures together with quantitative analysis of defect densities using Raman spectroscopy. PMID:25284688

  17. In-situ observation and atomic resolution imaging of the ion irradiation induced amorphisation of graphene.

    PubMed

    Pan, C-T; Hinks, J A; Ramasse, Q M; Greaves, G; Bangert, U; Donnelly, S E; Haigh, S J

    2014-01-01

    Ion irradiation has been observed to induce a macroscopic flattening and in-plane shrinkage of graphene sheets without a complete loss of crystallinity. Electron diffraction studies performed during simultaneous in-situ ion irradiation have allowed identification of the fluence at which the graphene sheet loses long-range order. This approach has facilitated complementary ex-situ investigations, allowing the first atomic resolution scanning transmission electron microscopy images of ion-irradiation induced graphene defect structures together with quantitative analysis of defect densities using Raman spectroscopy. PMID:25284688

  18. Temperature-dependent dielectric functions in atomically thin graphene, silicene, and arsenene

    SciTech Connect

    Yang, J. Y.; Liu, L. H.

    2015-08-31

    The dielectric functions of atomically thin graphene, silicene, and arsenene have been investigated as a function of temperature. With zero energy gap, more carriers in graphene and silicene are thermally excited as temperature increases and intraband transition strengthens, resulting in the strengthened absorption peak. Yet with large energy gap, interband transition dominates optical absorption of arsenene but it reduces as lattice vibration enhances, inducing the redshift and decreased absorption peak. To validate the theoretical method, the calculated optical constants of isolated graphene are compared with ellipsometry results and demonstrate good agreement.

  19. Investigating change of properties in gallium ion irradiation patterned single-layer graphene

    NASA Astrophysics Data System (ADS)

    Wang, Quan; Dong, Jinyao; Bai, Bing; Xie, Guoxin

    2016-10-01

    Besides its excellent physical properties, graphene promises to play a significant role in electronics with superior properties, which requires patterning of graphene for device integration. Here, we presented the changes in properties of single-layer graphene before and after patterning using gallium ion beam. Combined with Raman spectra of graphene, the scanning capacitance microscopy (SCM) image confirmed that a metal-insulator transition occurred after large doses of gallium ion irradiation. The changes in work function and Raman spectra of graphene indicated that the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. The patterning width of graphene presented an increasing trend due to the scattering influence of the impurities and the substrate.

  20. Synthesis of Few-Layer Graphene Using DC PE-CVD

    NASA Astrophysics Data System (ADS)

    Kim, Jeong Hyuk; Castro, Edward Joseph D.; Hwang, Yong Gyoo; Lee, Choong Hun

    2011-12-01

    Few layer graphene (FLG) had been successfully grown on polycrystalline Ni films or foils on a large scale using DC Plasma Enhanced Chemical Vapor Deposition (DC PE-CVD) as a result of the Raman spectra drawn out of the sample. The size of graphene films is dependent on the area of the Ni film as well as the DC PE-CVD chamber size. Synthesis time has an effect on the quality of graphene produced. However, further analysis and experiments must be pursued to further identify the optimum settings and conditions of producing better quality graphene. Applied plasma voltage on the other hand, had an influence on the minimization of defects in the graphene grown. It has also presented a method of producing a free standing PMMA/graphene membrane on a FeCl3(aq) solution which could then be transferred to a desired substrate.

  1. Design and comparative study of lateral and vertical LEDs with graphene as current spreading layer

    NASA Astrophysics Data System (ADS)

    Palakurthy, Shivani; Singh, Sumitra; Pal, Suchandan; Dhanavantri, Chenna

    2015-10-01

    This study analyzes the current spreading effect of graphene on lateral and vertical light emitting diodes (LEDs). We observe an improvement in uniformity of current distribution, light output power and wall-plug efficiency in lateral LEDs (L-LEDs) with graphene current spreading layer (CSL) as compared to those with indium tin oxide (ITO) CSL. From the results we conclude that graphene CSL may be better alternative to ITO CSL. We further carried out a comparative study of lateral and vertical LEDs with graphene CSL. We observe 17% higher light output power, 16% higher wall-plug efficiency and 62% lower series resistance in the case of V-LEDs with graphene CSL when compared to that of L-LEDs with a graphene CSL. Reasons behind these results have been discussed.

  2. AA stacking, tribological and electronic properties of double-layer graphene with krypton spacer.

    PubMed

    Popov, Andrey M; Lebedeva, Irina V; Knizhnik, Andrey A; Lozovik, Yurii E; Potapkin, Boris V; Poklonski, Nikolai A; Siahlo, Andrei I; Vyrko, Sergey A

    2013-10-21

    Structural, energetic, and tribological characteristics of double-layer graphene with commensurate and incommensurate krypton spacers of nearly monolayer coverage are studied within the van der Waals-corrected density functional theory. It is shown that when the spacer is in the commensurate phase, the graphene layers have the AA stacking. For this phase, the barriers to relative in-plane translational and rotational motion and the shear mode frequency of the graphene layers are calculated. For the incommensurate phase, both of the barriers are found to be negligibly small. A considerable change of tunneling conductance between the graphene layers separated by the commensurate krypton spacer at their relative subangstrom displacement is revealed by the use of the Bardeen method. The possibility of nanoelectromechanical systems based on the studied tribological and electronic properties of the considered heterostructures is discussed.

  3. Roller-style electrostatic printing of prepatterned few-layer-graphenes

    NASA Astrophysics Data System (ADS)

    Liang, Xiaogan; Giacometti, Valentina; Ismach, Ariel; Harteneck, Bruce D.; Olynick, Deirdre L.; Cabrini, Stefano

    2010-01-01

    Electrostatic exfoliation of patterned few-layer-graphenes was demonstrated using a method compatible with high throughput roll-to-roll manufacturing. A patterned graphite template was placed on a roller and used to exfoliate patterned graphene on a planar substrate. The exfoliated graphene features were subsequently characterized by Raman spectroscopy. In comparison with previously demonstrated planar electrostatic exfoliation approach, the roller-style method can create a narrower distribution of thickness of few-layer-graphenes, which is attributed to the combinational action of tangential rolling friction and electrostatic forces. This roller-style electrostatic printing technique could be applied for roll-to-roll manufacturing of graphene-based devices in the future.

  4. Comparison of graphene oxide with reduced graphene oxide as hole extraction layer in organic photovoltaic cells.

    PubMed

    Choi, Kyoung Soon; Park, Yensil; Kim, Soo Young

    2013-05-01

    A comparison was performed between the use of graphene oxide (GO) and reduced graphene oxide (rGO) as a hole extraction layer (HEL) in organic photovoltaic (OPV) cells with poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester. Hydrazine hydrate (HYD) and the thermal method (Thermal) were adopted to change the GO to rGO. The GO HEL was deposited on an indium tin oxide electrode by spin coating, followed by the reduction process to form the rGO HELs. The success of the reduction processes was confirmed by X-ray diffraction, Raman spectroscopy, X-ray photoemission spectroscopy, transmittance, and 2-point probe method. The OPV cell with the GO (-3 nm) HEL exhibits an increased power conversion efficiency (PCE) as high as 2.5% under 100 mW/cm2 illumination under air mass conditions, which is higher than that of the OPV cell without HEL, viz. 1.78%. However, the PCE of the OPV cell with rGO HEL is not high as the values of 1.8% for the HYD-rGO and 1.9% for the Thermal-rGO. The ultraviolet photoemission spectroscopy results showed that the work function of GO was 4.7 eV, but those of HYD-rGO and Thermal-rGO were 4.2 eV and 4.5 eV, respectively. Therefore, it is considered that GO is adequate to extract the holes from the active layer, but HYD-rGO and Thermal-rGO are not appropriate to use as HELs in OPV cells from the viewpoint of the energy alignment.

  5. Nonlinear dynamics of bi-layered graphene sheet, double-walled carbon nanotube and nanotube bundle

    NASA Astrophysics Data System (ADS)

    Gajbhiye, Sachin O.; Singh, S. P.

    2016-05-01

    Due to strong van der Waals (vdW) interactions, the graphene sheets and nanotubes stick to each other and form clusters of these corresponding nanostructures, viz. bi-layered graphene sheet (BLGS), double-walled carbon nanotube (DWCNT) and nanotube bundle (NB) or ropes. This research work is concerned with the study of nonlinear dynamics of BLGS, DWCNT and NB due to nonlinear interlayer vdW forces using multiscale atomistic finite element method. The energy between two adjacent carbon atoms is represented by the multibody interatomic Tersoff-Brenner potential, whereas the nonlinear interlayer vdW forces are represented by Lennard-Jones 6-12 potential function. The equivalent nonlinear material model of carbon-carbon bond is used to model it based on its force-deflection relation. Newmark's algorithm is used to solve the nonlinear matrix equation governing the motion of the BLGS, DWCNT and NB. An impulse and harmonic excitations are used to excite these nanostructures under cantilevered, bridged and clamped boundary conditions. The frequency responses of these nanostructures are computed, and the dominant resonant frequencies are identified. Along with the forced vibration of these structures, the eigenvalue extraction problem of armchair and zigzag NB is also considered. The natural frequencies and corresponding mode shapes are extracted for the different length and boundary conditions of the nanotube bundle.

  6. Three-dimensional spirals of atomic layered MoS2.

    PubMed

    Zhang, Liming; Liu, Kaihui; Wong, Andrew Barnabas; Kim, Jonghwan; Hong, Xiaoping; Liu, Chong; Cao, Ting; Louie, Steven G; Wang, Feng; Yang, Peidong

    2014-11-12

    Atomically thin two-dimensional (2D) layered materials, including graphene, boron nitride, and transition metal dichalcogenides (TMDs), can exhibit novel phenomena distinct from their bulk counterparts and hold great promise for novel electronic and optoelectronic applications. Controlled growth of such 2D materials with different thickness, composition, and symmetry are of central importance to realize their potential. In particular, the ability to control the symmetry of TMD layers is highly desirable because breaking the inversion symmetry can lead to intriguing valley physics, nonlinear optical properties, and piezoelectric responses. Here we report the first chemical vapor deposition (CVD) growth of spirals of layered MoS2 with atomically thin helical periodicity, which exhibits a chiral structure and breaks the three-dimensional (3D) inversion symmetry explicitly. The spirals composed of tens of connected MoS2 layers with decreasing areas: each basal plane has a triangular shape and shrinks gradually to the summit when spiraling up. All the layers in the spiral assume an AA lattice stacking, which is in contrast to the centrosymmetric AB stacking in natural MoS2 crystals. We show that the noncentrosymmetric MoS2 spiral leads to a strong bulk second-order optical nonlinearity. In addition, we found that the growth of spirals involves a dislocation mechanism, which can be generally applicable to other 2D TMD materials.

  7. Layer-by-layer assembly of 3D tissue constructs with functionalized graphene

    PubMed Central

    Shin, Su Ryon; Aghaei-Ghareh-Bolagh, Behnaz; Gao, Xiguang; Nikkhah, Mehdi; Jung, Sung Mi; Dolatshahi-Pirouz, Alireza; Kim, Sang Bok; Kim, Sun Min; Dokmeci, Mehmet R.; Tang, Xiaowu (Shirley); Khademhosseini, Ali

    2014-01-01

    Carbon-based nanomaterials have been considered as promising candidates to mimic certain structure and function of native extracellular matrix materials for tissue engineering. Significant progress has been made in fabricating carbon nanoparticle-incorporated cell culture substrates, but limited studies have been reported on the development of three-dimensional (3D) tissue constructs using these nanomaterials. Here, we present a novel approach to engineer 3D multi-layered constructs using layer-by-layer (LbL) assembly of cells separated with self-assembled graphene oxide (GO)-based thin films. The GO-based structures are shown to serve as cell adhesive sheets that effectively facilitate the formation of multi-layer cell constructs with interlayer connectivity. By controlling the amount of GO deposited in forming the thin films, the thickness of the multi-layer tissue constructs could be tuned with high cell viability. Specifically, this approach could be useful for creating dense and tightly connected cardiac tissues through the co-culture of cardiomyocytes and other cell types. In this work, we demonstrated the fabrication of stand-alone multi-layer cardiac tissues with strong spontaneous beating behavior and programmable pumping properties. Therefore, this LbL-based cell construct fabrication approach, utilizing GO thin films formed directly on cell surfaces, has great potential in engineering 3D tissue structures with improved organization, electrophysiological function, and mechanical integrity. PMID:25419209

  8. Deuterium accumulation in beryllium oxide layer exposed to deuterium atoms

    NASA Astrophysics Data System (ADS)

    Sharapov, V. M.; Alimov, V. Kh.; Gavrilov, L. E.

    1998-10-01

    The interaction of deuterium atoms with beryllium TIP-30 was studied at temperatures of 340, 500 and 740 K. After D atom exposure, the depth distributions of deuterium atoms and molecules in Be were measured using combined Secondary Ion Mass Spectrometry (SIMS) and Residual Gas Analysis (RGA) methods. It was shown that deuterium is mainly accumulated in the oxide layer although long tails are also observed. Deuterium is retained in two states - atomic and molecular forms. The amount of trapped deuterium in samples decreases during the sample storage in vacuum or air at room temperature. The results were explained by the chemical bonding of D atoms in BeO oxide with beryllium hydroxide formation and the trapping of deuterium molecules in bubbles which are formed at growth defects in the oxide layer.

  9. Switchable graphene-substrate coupling through formation/dissolution of an intercalated Ni-carbide layer

    PubMed Central

    Africh, Cristina; Cepek, Cinzia; Patera, Laerte L.; Zamborlini, Giovanni; Genoni, Pietro; Menteş, Tevfik O.; Sala, Alessandro; Locatelli, Andrea; Comelli, Giovanni

    2016-01-01

    Control over the film-substrate interaction is key to the exploitation of graphene’s unique electronic properties. Typically, a buffer layer is irreversibly intercalated “from above” to ensure decoupling. For graphene/Ni(111) we instead tune the film interaction “from below”. By temperature controlling the formation/dissolution of a carbide layer under rotated graphene domains, we reversibly switch graphene’s electronic structure from semi-metallic to metallic. Our results are relevant for the design of controllable graphene/metal interfaces in functional devices. PMID:26804138

  10. Magnetic properties of cobalt single layer added on graphene: A density functional theory study

    NASA Astrophysics Data System (ADS)

    Afshar, M.; Doosti, H.

    2015-01-01

    In this paper, we have demonstrated magnetic ordering of single cobalt layer added on graphene using relativistic density functional theory at the level of generalized gradient approximation. We have shown that the single Co layer added on graphene show ferromagnetic ordering with perpendicular alignment to the graphene sheet. In the presence of spin-orbit coupling, a spin-polarization degree of about 92% was found for this quasi-two-dimensional magnetic system where it is shown a nearly half-metallic feature.

  11. Energetics, diffusion, and magnetic properties of cobalt atom in a monolayer graphene: An ab initio study

    SciTech Connect

    Raji, Abdulrafiu T.; Lombardi, Enrico B.

    2015-09-21

    We use ab initio methods to study the binding, diffusion, and magnetic properties of cobalt atom embedded in graphene vacancies. We investigate the diffusion of Co-monovacancy (Co-MV) and Co-divacancy (Co-DV) defect complexes, and determine the minimum energy path (MEP), as well as the activation energy barrier of migration. We obtained similar activation energy barriers, of ∼5.8 eV, for Co-MV and Co-DV diffusion, respectively. Our calculations also suggest that, at electron–irradiation energy of 200 keV as used in a related experiment, the maximum energy transfer to the Co atom, of approximately 9.0 eV is sufficiently high to break metal-carbon bonding. The incident electron energy is also high enough to displace graphene's carbon atoms from their lattice positions. The breaking of metal-carbon bonding and the displacement of graphene atoms may act to facilitate the migration of Co. We conclude therefore that the detrapping and diffusion of cobalt as observed experimentally is likely to be radiation-induced, similar to what has been observed for Au and Fe in electron-irradiated graphene. Furthermore, we show that Co migration in graphene is such that its magnetic moment varies along the diffusion path. The magnetic moment of Co is consistently higher in Co-DV diffusion when compared to that of Co-MV diffusion.

  12. Incorporating isolated molybdenum (Mo) atoms into Bilayer Epitaxial Graphene on 4H-SiC(0001)

    NASA Astrophysics Data System (ADS)

    Huang, Han; Wan, Wen; Li, Hui; Wong, Swee Liang; Lv, Lu; Gao, Yongli; Wee, Andrew T. S.

    2014-03-01

    The atomic structures and electronic properties of isolated Mo atoms in bilayer epitaxial graphene (BLEG) on 4H-SiC(0001) are investigated by low temperature scanning tunneling microscopy (LT-STM). LT-STM results reveal that isolated Mo dopants prefer to substitute C atoms at α-sites, and preferentially locate between the graphene bilayers. First-principles calculations confirm that the embedding of single Mo dopants within BLEG is energetically favorable as compared to monolayer graphene. The calculated bandstructures show that Mo-doped BLEG is n-doped, and each Mo atom introduces a local magnetic moment of 1.81 μB. Our findings demonstrate a simple and stable method to incorporate single transition metal dopants into the graphene lattice to tune its electronic and magnetic properties for possible use in graphene spin devices. NRF-CRP (Singapore) grants R-143-000-360-281and R-144-000-295-281. ``Shenghua Professorship'' startup funding from CSU and the support from the NSF of China (Grant No.11304398).

  13. Atomic-scaled characterization of graphene PN junctions

    NASA Astrophysics Data System (ADS)

    Zhou, Xiaodong; Wang, Dennis; Dadgar, Ali; Agnihotri, Pratik; Lee, Ji Ung; Reuter, Mark C.; Ross, Frances M.; Pasupathy, Abhay N.

    Graphene p-n junctions are essential devices for studying relativistic Klein tunneling and the Veselago lensing effect in graphene. We have successfully fabricated graphene p-n junctions using both lithographically pre-patterned substrates and the stacking of vertical heterostructures. We then use our 4-probe STM system to characterize the junctions. The ability to carry out scanning electron microscopy (SEM) in our STM instrument is essential for us to locate and measure the junction interface. We obtain both the topography and dI/dV spectra at the junction area, from which we track the shift of the graphene chemical potential with position across the junction interface. This allows us to directly measure the spatial width and roughness of the junction and its potential barrier height. We will compare the junction properties of devices fabricated by the aforementioned two methods and discuss their effects on the performance as a Veselago lens.

  14. Compositional characterization of atomic layer deposited alumina

    SciTech Connect

    Philip, Anu; Thomas, Subin; Kumar, K. Rajeev

    2014-01-28

    As the microelectronic industry demands feature size in the order of few and sub nanometer regime, the film composition and other film properties become critical issues and ALD has emerged as the choice of industry. Aluminum oxide is a material with wide applications in electronic and optoelectronic devices and protective and ion barrier layers. Al{sub 2}O{sub 3} is an excellent dielectric because of its large band gap (8.7eV), large band offsets with silicon. We have deposited thin layers of alumina on silicon wafer (p-type) for gate dielectric applications by ALD technique and compositional characterizations of the deposited thin films were done using EDS, XPS and FTIR spectra.

  15. Graphene oxide/metal nanocrystal multilaminates as the atomic limit for safe and selective hydrogen storage

    DOE PAGES

    Cho, Eun Seon; Ruminski, Anne M.; Aloni, Shaul; Liu, Yi-Sheng; Guo, Jinghua; Urban, Jeffrey J.

    2016-02-23

    Interest in hydrogen fuel is growing for automotive applications; however, safe, dense, solid-state hydrogen storage remains a formidable scientific challenge. Metal hydrides offer ample storage capacity and do not require cryogens or exceedingly high pressures for operation. However, hydrides have largely been abandoned because of oxidative instability and sluggish kinetics. We report a new, environmentally stable hydrogen storage material constructed of Mg nanocrystals encapsulated by atomically thin and gas-selective reduced graphene oxide (rGO) sheets. This material, protected from oxygen and moisture by the rGO layers, exhibits exceptionally dense hydrogen storage (6.5 wt% and 0.105 kg H2 per litre in themore » total composite). As rGO is atomically thin, this approach minimizes inactive mass in the composite, while also providing a kinetic enhancement to hydrogen sorption performance. In conclusion, these multilaminates of rGO-Mg are able to deliver exceptionally dense hydrogen storage and provide a material platform for harnessing the attributes of sensitive nanomaterials in demanding environments.« less

  16. Graphene oxide/metal nanocrystal multilaminates as the atomic limit for safe and selective hydrogen storage

    PubMed Central

    Cho, Eun Seon; Ruminski, Anne M.; Aloni, Shaul; Liu, Yi-Sheng; Guo, Jinghua; Urban, Jeffrey J.

    2016-01-01

    Interest in hydrogen fuel is growing for automotive applications; however, safe, dense, solid-state hydrogen storage remains a formidable scientific challenge. Metal hydrides offer ample storage capacity and do not require cryogens or exceedingly high pressures for operation. However, hydrides have largely been abandoned because of oxidative instability and sluggish kinetics. We report a new, environmentally stable hydrogen storage material constructed of Mg nanocrystals encapsulated by atomically thin and gas-selective reduced graphene oxide (rGO) sheets. This material, protected from oxygen and moisture by the rGO layers, exhibits exceptionally dense hydrogen storage (6.5 wt% and 0.105 kg H2 per litre in the total composite). As rGO is atomically thin, this approach minimizes inactive mass in the composite, while also providing a kinetic enhancement to hydrogen sorption performance. These multilaminates of rGO-Mg are able to deliver exceptionally dense hydrogen storage and provide a material platform for harnessing the attributes of sensitive nanomaterials in demanding environments. PMID:26902901

  17. Graphene oxide/metal nanocrystal multilaminates as the atomic limit for safe and selective hydrogen storage.

    PubMed

    Cho, Eun Seon; Ruminski, Anne M; Aloni, Shaul; Liu, Yi-Sheng; Guo, Jinghua; Urban, Jeffrey J

    2016-02-23

    Interest in hydrogen fuel is growing for automotive applications; however, safe, dense, solid-state hydrogen storage remains a formidable scientific challenge. Metal hydrides offer ample storage capacity and do not require cryogens or exceedingly high pressures for operation. However, hydrides have largely been abandoned because of oxidative instability and sluggish kinetics. We report a new, environmentally stable hydrogen storage material constructed of Mg nanocrystals encapsulated by atomically thin and gas-selective reduced graphene oxide (rGO) sheets. This material, protected from oxygen and moisture by the rGO layers, exhibits exceptionally dense hydrogen storage (6.5 wt% and 0.105 kg H2 per litre in the total composite). As rGO is atomically thin, this approach minimizes inactive mass in the composite, while also providing a kinetic enhancement to hydrogen sorption performance. These multilaminates of rGO-Mg are able to deliver exceptionally dense hydrogen storage and provide a material platform for harnessing the attributes of sensitive nanomaterials in demanding environments.

  18. Graphene oxide/metal nanocrystal multilaminates as the atomic limit for safe and selective hydrogen storage

    NASA Astrophysics Data System (ADS)

    Cho, Eun Seon; Ruminski, Anne M.; Aloni, Shaul; Liu, Yi-Sheng; Guo, Jinghua; Urban, Jeffrey J.

    2016-02-01

    Interest in hydrogen fuel is growing for automotive applications; however, safe, dense, solid-state hydrogen storage remains a formidable scientific challenge. Metal hydrides offer ample storage capacity and do not require cryogens or exceedingly high pressures for operation. However, hydrides have largely been abandoned because of oxidative instability and sluggish kinetics. We report a new, environmentally stable hydrogen storage material constructed of Mg nanocrystals encapsulated by atomically thin and gas-selective reduced graphene oxide (rGO) sheets. This material, protected from oxygen and moisture by the rGO layers, exhibits exceptionally dense hydrogen storage (6.5 wt% and 0.105 kg H2 per litre in the total composite). As rGO is atomically thin, this approach minimizes inactive mass in the composite, while also providing a kinetic enhancement to hydrogen sorption performance. These multilaminates of rGO-Mg are able to deliver exceptionally dense hydrogen storage and provide a material platform for harnessing the attributes of sensitive nanomaterials in demanding environments.

  19. Atomic-layer engineering of oxide superconductors

    NASA Astrophysics Data System (ADS)

    Bollinger, A. T.; Eckstein, J. N.; Dubuis, G.; Pavuna, D.; Božović, I.

    2012-02-01

    Molecular beam epitaxy technique has enabled synthesis of atomically smooth thin films, multilayers, and superlattices of cuprates and other complex oxides. Such heterostructures show high temperature superconductivity and enable novel experiments that probe the basic physics of this phenomenon. For example, it was established that high temperature superconductivity and anti-ferromagnetic phases separate on Ångström scale, while the pseudo-gap state apparently mixes with high temperature superconductivity over an anomalously large length scale (the "Giant Proximity Effect"). We review some recent experiments on such films and superlattices, including X-ray diffraction, atomic force microscopy, angle-resolved time of flight ion scattering and recoil spectroscopy, transport measurements, highresolution transmission electron microscopy, resonant X-ray scattering, low-energy muon spin resonance, and ultrafast photo-induced reflection high energy electron diffraction. The results include an unambiguous demonstration of strong coupling of in-plane charge excitations to out-of-plane lattice vibrations, a discovery of interface high temperature superconductivity that occurs in a single CuO2 plane, evidence for local pairs, and establishing tight limits on the temperature range of superconducting fluctuations.

  20. Self-assembly of metal atoms (Na, K, Ca) on graphene

    NASA Astrophysics Data System (ADS)

    Zhou, Jian; Zhang, Shunhong; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-01-01

    A thorough search of the distribution pattern of Na, K, and Ca atoms on graphene surface, carried out using a synergistic combination of density functional theory and particle swarm optimization algorithm, yielded some unusual results. The equilibrium distribution is concentration and metal dependent; the metal atoms distribute uniformly when their coverage ratio M : C (M = Na, K, Ca) is 1 : 6, but Na and Ca atoms self-assemble to form parallel quasi-one-dimensional chains when their coverage is reduced to 1 : 8. At the higher concentration (M : C = 1 : 6), electron-phonon coupling calculations further show that the NaC6 is a superconductor with critical temperature of 5.8 K, which is the highest value among all the stable alkali or alkaline-earth metal decorated monolayer graphene systems studied to-date. At the lower concentration (M : C = 1 : 8) and depending on metal species, well-aligned atomic metal chains interact with graphene with varying intensity, making it possible to achieve either rigid or non-rigid band doping in graphene.A thorough search of the distribution pattern of Na, K, and Ca atoms on graphene surface, carried out using a synergistic combination of density functional theory and particle swarm optimization algorithm, yielded some unusual results. The equilibrium distribution is concentration and metal dependent; the metal atoms distribute uniformly when their coverage ratio M : C (M = Na, K, Ca) is 1 : 6, but Na and Ca atoms self-assemble to form parallel quasi-one-dimensional chains when their coverage is reduced to 1 : 8. At the higher concentration (M : C = 1 : 6), electron-phonon coupling calculations further show that the NaC6 is a superconductor with critical temperature of 5.8 K, which is the highest value among all the stable alkali or alkaline-earth metal decorated monolayer graphene systems studied to-date. At the lower concentration (M : C = 1 : 8) and depending on metal species, well-aligned atomic metal chains interact with

  1. Hexagonal single crystal domains of few-layer graphene on copper foils.

    PubMed

    Robertson, Alex W; Warner, Jamie H

    2011-03-01

    Hexagonal-shaped single crystal domains of few layer graphene (FLG) are synthesized on copper foils using atmospheric pressure chemical vapor deposition with a high methane flow. Scanning electron microscopy reveals that the graphene domains have a hexagonal shape and are randomly orientated on the copper foil. However, the sites of graphene nucleation exhibit some correlation by forming linear rows. Transmission electron microscopy is used to examine the folded edges of individual domains and reveals they are few-layer graphene consisting of approximately 5-10 layers in the central region and thinning out toward the edges of the domain. Selected area electron diffraction of individual isolated domains reveals they are single crystals with AB Bernal stacking and free from the intrinsic rotational stacking faults that are associated with turbostratic graphite. We study the time-dependent growth dynamics of the domains and show that the final continuous FLG film is polycrystalline, consisting of randomly connected single crystal domains.

  2. Absorption of THz electromagnetic wave in two mono-layers of graphene

    NASA Astrophysics Data System (ADS)

    Reynolds, Cole B.; Shoufie Ukhtary, M.; Saito, Riichiro

    2016-05-01

    Nearly 100% absorption of an electromagnetic (EM) wave in terahertz (THz) frequency is proposed for a system consisting of two mono-layers of graphene. Here, we demonstrate that the system can almost perfectly absorb an EM wave with frequency of 2 THz, even though we have a low electron mobility of roughly 1000 cm2  Vs‑1. The absorption probability is calculated by using the transfer matrix method. We show that the two mono-layers of the graphene system is needed to obtain nearly 100% absorption when the graphene has a relatively low Fermi energy. The absorption dependence on the distance between the graphene layers is also discussed.

  3. Deformation sensor based on polymer-supported discontinuous graphene multi-layer coatings

    NASA Astrophysics Data System (ADS)

    Carotenuto, G.; Schiavo, L.; Romeo, V.; Nicolais, L.

    2014-05-01

    Graphene can be conveniently used in the modification of polymer surfaces. Graphene macromolecules are perfectly transparent to the visible light and electrically conductive, consequently these two properties can be simultaneously provided to polymeric substrates by surface coating with thin graphene layers. In addition, such coating process provides the substrates of: water-repellence, higher surface hardness, low-friction, self-lubrication, gas-barrier properties, and many other functionalities. Polyolefins have a non-polar nature and therefore graphene strongly sticks on their surface. Nano-crystalline graphite can be used as graphene precursor in some chemical processes (e.g., graphite oxide synthesis by the Hummer method), in addition it can be directly applied to the surface of a polyolefin substrate (e.g., polyethylene) to cover it by a thin graphene multilayer. In particular, the nano-crystalline graphite perfectly exfoliate under the application of a combination of shear and friction forces and the produced graphene single-layers perfectly spread and adhere on the polyethylene substrate surface. Such polymeric materials can be used as ITO (indium-tin oxide) substitute and in the fabrication of different electronic devices. Here the fabrication of transparent resistive deformation sensors based on low-density polyethylene films coated by graphene multilayers is described. Such devices are very sensible and show a high reversible and reproducible behavior.

  4. Deformation sensor based on polymer-supported discontinuous graphene multi-layer coatings

    SciTech Connect

    Carotenuto, G.; Schiavo, L.; Romeo, V.; Nicolais, L.

    2014-05-15

    Graphene can be conveniently used in the modification of polymer surfaces. Graphene macromolecules are perfectly transparent to the visible light and electrically conductive, consequently these two properties can be simultaneously provided to polymeric substrates by surface coating with thin graphene layers. In addition, such coating process provides the substrates of: water-repellence, higher surface hardness, low-friction, self-lubrication, gas-barrier properties, and many other functionalities. Polyolefins have a non-polar nature and therefore graphene strongly sticks on their surface. Nano-crystalline graphite can be used as graphene precursor in some chemical processes (e.g., graphite oxide synthesis by the Hummer method), in addition it can be directly applied to the surface of a polyolefin substrate (e.g., polyethylene) to cover it by a thin graphene multilayer. In particular, the nano-crystalline graphite perfectly exfoliate under the application of a combination of shear and friction forces and the produced graphene single-layers perfectly spread and adhere on the polyethylene substrate surface. Such polymeric materials can be used as ITO (indium-tin oxide) substitute and in the fabrication of different electronic devices. Here the fabrication of transparent resistive deformation sensors based on low-density polyethylene films coated by graphene multilayers is described. Such devices are very sensible and show a high reversible and reproducible behavior.

  5. A further comparison of graphene and thin metal layers for plasmonics.

    PubMed

    He, Xiaoyong; Gao, Pingqi; Shi, Wangzhou

    2016-05-21

    Which one is much more suitable for plasmonic materials, graphene or metal? To address this problem well, the plasmonic properties of thin metal sheets at different thicknesses have been investigated and compared with a graphene layer. As demonstration examples, the propagation properties of insulator-metal-insulator and metamaterials (MMs) structures are also shown. The results manifest that the plasmonic properties of the graphene layer are comparable to that of thin metal sheets with the thickness of tens of nanometers. For the graphene MMs structure, by using the periodic stack structure in the active region, the resonant transmission strength significantly improves. At the optimum period number, 3-5 periods of graphene/SiO2, the graphene MMs structure manifests good frequency and amplitude tunable properties simultaneously, and the resonant strength is also strong with large values of the Q-factor. Therefore, graphene is a good tunable plasmonic material. The results are very helpful to develop novel graphene plasmonic devices, such as modulators, antenna and filters.

  6. A further comparison of graphene and thin metal layers for plasmonics

    NASA Astrophysics Data System (ADS)

    He, Xiaoyong; Gao, Pingqi; Shi, Wangzhou

    2016-05-01

    Which one is much more suitable for plasmonic materials, graphene or metal? To address this problem well, the plasmonic properties of thin metal sheets at different thicknesses have been investigated and compared with a graphene layer. As demonstration examples, the propagation properties of insulator-metal-insulator and metamaterials (MMs) structures are also shown. The results manifest that the plasmonic properties of the graphene layer are comparable to that of thin metal sheets with the thickness of tens of nanometers. For the graphene MMs structure, by using the periodic stack structure in the active region, the resonant transmission strength significantly improves. At the optimum period number, 3-5 periods of graphene/SiO2, the graphene MMs structure manifests good frequency and amplitude tunable properties simultaneously, and the resonant strength is also strong with large values of the Q-factor. Therefore, graphene is a good tunable plasmonic material. The results are very helpful to develop novel graphene plasmonic devices, such as modulators, antenna and filters.

  7. Realization of a tunable artificial atom at a supercritically charged vacancy in graphene

    NASA Astrophysics Data System (ADS)

    Mao, Jinhai; Jiang, Yuhang; Moldovan, Dean; Li, Guohong; Watanabe, Kenji; Taniguchi, Takashi; Masir, Massoud Ramezani; Peeters, Francois M.; Andrei, Eva Y.

    2016-06-01

    Graphene's remarkable electronic properties have fuelled the vision of a graphene-based platform for lighter, faster and smarter electronics and computing applications. One of the challenges is to devise ways to tailor graphene's electronic properties and to control its charge carriers. Here we show that a single-atom vacancy in graphene can stably host a local charge and that this charge can be gradually built up by applying voltage pulses with the tip of a scanning tunnelling microscope. The response of the conduction electrons in graphene to the local charge is monitored with scanning tunnelling and Landau level spectroscopy, and compared to numerical simulations. As the charge is increased, its interaction with the conduction electrons undergoes a transition into a supercritical regime where itinerant electrons are trapped in a sequence of quasi-bound states which resemble an artificial atom. The quasi-bound electron states are detected by a strong enhancement of the density of states within a disc centred on the vacancy site which is surrounded by halo of hole states. We further show that the quasi-bound states at the vacancy site are gate tunable and that the trapping mechanism can be turned on and off, providing a mechanism to control and guide electrons in graphene.

  8. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene.

    PubMed

    Choi, Jin Sik; Chang, Young Jun; Woo, Sungjong; Son, Young-Woo; Park, Yeonggu; Lee, Mi Jung; Byun, Ik-Su; Kim, Jin-Soo; Choi, Choon-Gi; Bostwick, Aaron; Rotenberg, Eli; Park, Bae Ho

    2014-01-01

    Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzag directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. The correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene. PMID:25434431

  9. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene

    NASA Astrophysics Data System (ADS)

    Choi, Jin Sik; Chang, Young Jun; Woo, Sungjong; Son, Young-Woo; Park, Yeonggu; Lee, Mi Jung; Byun, Ik-Su; Kim, Jin-Soo; Choi, Choon-Gi; Bostwick, Aaron; Rotenberg, Eli; Park, Bae Ho

    2014-12-01

    Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzag directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. The correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene.

  10. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene

    DOE PAGES

    Choi, Jin Sik; Chang, Young Jun; Woo, Sungjong; Son, Young-Woo; Park, Yeonggu; Lee, Mi Jung; Byun, Ik-Su; Kim, Jin-Soo; Choi, Choon-Gi; Bostwick, Aaron; et al

    2014-12-01

    Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzagmore » directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. Lastly, the correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene.« less

  11. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene

    PubMed Central

    Choi, Jin Sik; Chang, Young Jun; Woo, Sungjong; Son, Young-Woo; Park, Yeonggu; Lee, Mi Jung; Byun, Ik-Su; Kim, Jin-Soo; Choi, Choon-Gi; Bostwick, Aaron; Rotenberg, Eli; Park, Bae Ho

    2014-01-01

    Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzag directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. The correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene. PMID:25434431

  12. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene

    SciTech Connect

    Choi, Jin Sik; Chang, Young Jun; Woo, Sungjong; Son, Young-Woo; Park, Yeonggu; Lee, Mi Jung; Byun, Ik-Su; Kim, Jin-Soo; Choi, Choon-Gi; Bostwick, Aaron; Rotenberg, Eli; Park, Bae Ho

    2014-12-01

    Deformation normal to the surface is intrinsic in two-dimensional materials due to phononic thermal fluctuations at finite temperatures. Graphene's negative thermal expansion coefficient is generally explained by such an intrinsic property. Recently, friction measurements on graphene exfoliated on a silicon oxide surface revealed an anomalous anisotropy whose origin was believed to be the formation of ripple domains. Here, we uncover the atomistic origin of the observed friction domains using a cantilever torsion microscopy in conjunction with angle-resolved photoemission spectroscopy. We experimentally demonstrate that ripples on graphene are formed along the zigzag direction of the hexagonal lattice. The formation of zigzag directional ripple is consistent with our theoretical model that takes account of the atomic-scale bending stiffness of carbon-carbon bonds and the interaction of graphene with the substrate. Lastly, the correlation between micrometer-scale ripple alignment and atomic-scale arrangement of exfoliated monolayer graphene is first discovered and suggests a practical tool for measuring lattice orientation of graphene.

  13. High-yield synthesis of few-layer graphene flakes through electrochemical expansion of graphite in propylene carbonate electrolyte.

    PubMed

    Wang, Junzhong; Manga, Kiran Kumar; Bao, Qiaoliang; Loh, Kian Ping

    2011-06-15

    High-yield production of few-layer graphene flakes from graphite is important for the scalable synthesis and industrial application of graphene. However, high-yield exfoliation of graphite to form graphene sheets without using any oxidation process or super-strong acid is challenging. Here we demonstrate a solution route inspired by the lithium rechargeable battery for the high-yield (>70%) exfoliation of graphite into highly conductive few-layer graphene flakes (average thickness <5 layers). A negative graphite electrode can be electrochemically charged and expanded in an electrolyte of Li salts and organic solvents under high current density and exfoliated efficiently into few-layer graphene sheets with the aid of sonication. The dispersible graphene can be ink-brushed to form highly conformal coatings of conductive films (15 ohm/square at a graphene loading of <1 mg/cm(2)) on commercial paper. PMID:21557613

  14. Thermal vibration of a rectangular single-layered graphene sheet with quantum effects

    SciTech Connect

    Wang, Lifeng Hu, Haiyan

    2014-06-21

    The thermal vibration of a rectangular single-layered graphene sheet is investigated by using a rectangular nonlocal elastic plate model with quantum effects taken into account when the law of energy equipartition is unreliable. The relation between the temperature and the Root of Mean Squared (RMS) amplitude of vibration at any point of the rectangular single-layered graphene sheet in simply supported case is derived first from the rectangular nonlocal elastic plate model with the strain gradient of the second order taken into consideration so as to characterize the effect of microstructure of the graphene sheet. Then, the RMS amplitude of thermal vibration of a rectangular single-layered graphene sheet simply supported on an elastic foundation is derived. The study shows that the RMS amplitude of the rectangular single-layered graphene sheet predicted from the quantum theory is lower than that predicted from the law of energy equipartition. The maximal relative difference of RMS amplitude of thermal vibration appears at the sheet corners. The microstructure of the graphene sheet has a little effect on the thermal vibrations of lower modes, but exhibits an obvious effect on the thermal vibrations of higher modes. The quantum effect is more important for the thermal vibration of higher modes in the case of smaller sides and lower temperature. The relative difference of maximal RMS amplitude of thermal vibration of a rectangular single-layered graphene sheet decreases monotonically with an increase of temperature. The absolute difference of maximal RMS amplitude of thermal vibration of a rectangular single-layered graphene sheet increases slowly with the rising of Winkler foundation modulus.

  15. Power Enhancement of Lithium-Ion Batteries by a Graphene Interfacial Layer.

    PubMed

    Song, Young Il; An, Ja Hwa; Kim, Tae Yoo; Lee, Jung Woo; Yoo, Young Zo; Suh, Su Jeong; Kim, Sung-Soo

    2015-11-01

    We achieved a method for power enhancement of heavy-duty lithium-ion batteries (LIBs) by synthesizing a graphene interfacial layer onto the anode copper current collector (ACCC). We tested fabricated coin cells, which used either 35-μm-thick rolled pristine copper foil or graphene synthesized onto the pristine copper foil for power output estimation of the LIBs. We observed the copper surface morphology with a scanning electron microscope (SEM). Raman spectroscopy was used to measure the bonding characteristics and estimate the layers of graphene films. In addition, transmittance and electrical resistance were measured by ultra-violet visible near-infrared spectroscopy (UV-Vis IR) and 4 point probe surface resistance measurement. The graphene films on polyethylene terephthalate (PET) substrate obtained a transmittance of 97.5% and sheet resistance of 429 Ω/square. Power enhancement performances was evaluated using LIB coin cells. After 5C current discharge rate of -1.7 A/g reversible capacity of 293 mAh/g and 326 mAh/g were obtained for pristine and synthesized graphene anode current collectors, respectively. The graphene synthesized onto the ACCC showed superior power performance. The results presented herein demonstrate a power enhancement of LIBs by a decrease in electron flow resistivity between active materials and the ACCC and removal of the native oxide layer on the anode copper surface using high quality graphene synthesized onto the ACCC. PMID:26726638

  16. Morphology Control of Zinc Oxide Nanostructure on Single Layer Graphene.

    PubMed

    Ahn, Seungbae; Vijayarangamuthu, K; Jeon, Ki-Jeon

    2016-05-01

    Various morphologies of zinc oxide (ZnO) nanostructures on single layer graphene were synthesized by electrodeposition method. The current density was utilized to control the morphology of the ZnO. The Scanning Electron Microscope (SEM) was used to examine the surface morphology of the samples. SEM analysis shows morphology changes to nanorod, flower, and flakes with increase in the current density from 0.1, 0.2, and 0.3 mA/cm(-1) respectively. The XRD, XPS, and Raman spectroscopy were adopted to characterize the ZnO nanostructure and to understand the formation of various morphologies. The Raman result clearly shows extra modes due to for flakes structure caused by c-axis orientation along the substrate direction. Further, XPS data also supports formation of ZnO without any other intermediate compound such as Zn(OH)2. The formation of various morphologies was correlated to the formation different ratio of Zn2+ and OH- ions and the change in growth direction due to various current densities. PMID:27483766

  17. Spectroscopic detection of atom-surface interactions in an atomic-vapor layer with nanoscale thickness

    NASA Astrophysics Data System (ADS)

    Whittaker, K. A.; Keaveney, J.; Hughes, I. G.; Sargsyan, A.; Sarkisyan, D.; Adams, C. S.

    2015-11-01

    We measure the resonance line shape of atomic-vapor layers with nanoscale thickness confined between two sapphire windows. The measurement is performed by scanning a probe laser through resonance and collecting the scattered light. The line shape is dominated by the effects of Dicke narrowing, self-broadening, and atom-surface interactions. By fitting the measured line shape to a simple model we discuss the possibility to extract information about the atom-surface interaction.

  18. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

    PubMed

    Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

    2012-09-12

    By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

  19. Electrochemical atomic layer deposition of copper nanofilms on ruthenium

    NASA Astrophysics Data System (ADS)

    Gebregziabiher, Daniel K.; Kim, Youn-Geun; Thambidurai, Chandru; Ivanova, Valentina; Haumesser, Paul-Henri; Stickney, John L.

    2010-04-01

    As ULSI scales to smaller and smaller dimensions, it has become necessary to form layers of materials only a few nm thick. In addition, trenches are now being incorporated in ULSI formation which require conformal coating and will not be amenable to CMP. Atomic layer deposition (ALD) is being developed to address such issues. ALD is the formation of materials layer by layer using self-limiting reactions. This article describes the formation of Cu seed layers (for the Cu damascene process) on a Ru barrier layer. The deposit was formed by the electrochemical analog of ALD, using electrochemical self-limiting reactions which are referred to as underpotential deposition (UPD). Monolayer restricted galvanic displacement was used to form atomic layers of Cu. First Pb UPD was deposited, forming a sacrificial layer, and then a Cu +2 solution was flushed into the cell and Pb was exchanged for Cu. A linear dependence was shown for Cu growth over 8 ALD cycles, and STM showed a conformal deposition, as expected for an ALD process. Relative Cu coverages were determined using Auger electron spectroscopy, while absolute Cu coverages were obtained from coulometry during oxidative stripping of the deposits. Use of a Cl - containing electrolyte results in Cu deposits covered with an atomic layer of Cl atoms, which have been shown to protect the surfaced from oxidation during various stages of the deposition process. The 10 nm thick Ru substrates were formed on Si(1 0 0) wafers, and were partially oxidized upon receipt. Electrochemical reduction, prior to Cu deposition, removed the oxygen and some traces of carbon, the result of transport. Ion bombardment proved to clean all oxygen and carbon traces from the surface.

  20. An Introduction to Atomic Layer Deposition with Thermal Applications

    NASA Technical Reports Server (NTRS)

    Dwivedi, Vivek H.

    2015-01-01

    Atomic Layer Deposition (ALD) is a cost effective nano-manufacturing technique that allows for the conformal coating of substrates with atomic control in a benign temperature and pressure environment. Through the introduction of paired precursor gases thin films can be deposited on a myriad of substrates ranging from glass, polymers, aerogels, and metals to high aspect ratio geometries. This talk will focus on the utilization of ALD for engineering applications.

  1. 1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

    SciTech Connect

    Nguyen, Ba-Son; Lin, Jen-Fin

    2014-02-24

    We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750 °C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750 °C. At 800 °C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.

  2. Iridium wire grid polarizer fabricated using atomic layer deposition.

    PubMed

    Weber, Thomas; Käsebier, Thomas; Szeghalmi, Adriana; Knez, Mato; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2011-10-25

    In this work, an effective multistep process toward fabrication of an iridium wire grid polarizer for UV applications involving a frequency doubling process based on ultrafast electron beam lithography and atomic layer deposition is presented. The choice of iridium as grating material is based on its good optical properties and a superior oxidation resistance. Furthermore, atomic layer deposition of iridium allows a precise adjustment of the structural parameters of the grating much better than other deposition techniques like sputtering for example. At the target wavelength of 250 nm, a transmission of about 45% and an extinction ratio of 87 are achieved.

  3. Large area graphene ion sensitive field effect transistors with tantalum pentoxide sensing layers for pH measurement at the Nernstian limit

    SciTech Connect

    Fakih, Ibrahim Sabri, Shadi; Szkopek, Thomas; Mahvash, Farzaneh; Nannini, Matthieu; Siaj, Mohamed

    2014-08-25

    We have fabricated and characterized large area graphene ion sensitive field effect transistors (ISFETs) with tantalum pentoxide sensing layers and demonstrated pH sensitivities approaching the Nernstian limit. Low temperature atomic layer deposition was used to deposit tantalum pentoxide atop large area graphene ISFETs. The charge neutrality point of graphene, inferred from quantum capacitance or channel conductance, was used to monitor surface potential in the presence of an electrolyte with varying pH. Bare graphene ISFETs exhibit negligible response, while graphene ISFETs with tantalum pentoxide sensing layers show increased sensitivity reaching up to 55 mV/pH over pH 3 through pH 8. Applying the Bergveld model, which accounts for site binding and a Guoy-Chapman-Stern picture of the surface-electrolyte interface, the increased pH sensitivity can be attributed to an increased buffer capacity reaching up to 10{sup 14} sites/cm{sup 2}. ISFET response was found to be stable to better than 0.05 pH units over the course of two weeks.

  4. First-principles study of graphene under c-HfO2(111) layers: Electronic structures and transport properties

    NASA Astrophysics Data System (ADS)

    Kaneko, Tomoaki; Ohno, Takahisa

    2016-08-01

    We investigated the electronic properties, stability, and transport of graphene under c-HfO2(111) layers by performing first-principles calculations with special attention to the chemical bonding between graphene and HfO2 surfaces. When the interface of HfO2/graphene is terminated by an O layer, the linear dispersion of graphene is preserved and the degradation of transport is suppressed. For other interface structures, HfO2 is tightly adsorbed on graphene and the transport is strictly limited. In terms of the stability of the interface structures, an O-terminated interface is preferable, which is achieved under an O-deficient condition.

  5. Few layers isolated graphene domains grown on copper foils by microwave surface wave plasma CVD using camphor as a precursor

    NASA Astrophysics Data System (ADS)

    Ram Aryal, Hare; Adhikari, Sudip; Uchida, Hideo; Wakita, Koichi; Umeno, Masayoshi

    2016-03-01

    Few layers isolated graphene domains were grown by microwave surface wave plasma CVD technique using camphor at low temperature. Graphene nucleation centers were suppressed on pre-annealed copper foils by supplying low dissociation energy. Scanning electron microscopy study of time dependent growth reveals that graphene nucleation centers were preciously suppressed, which indicates the possibility of controlled growth of large area single crystal graphene domains by plasma processing. Raman spectroscopy revealed that the graphene domains are few layered which consist of relatively low defects.

  6. Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer

    SciTech Connect

    Tselev, Alexander Kalinin, Sergei V.; Sangwan, Vinod K.; Jariwala, Deep; Lauhon, Lincoln J.; Marks, Tobin J.; Hersam, Mark C.

    2013-12-09

    Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al{sub 2}O{sub 3} and HfO{sub 2} films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al{sub 2}O{sub 3}/HfO{sub 2} stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.

  7. Hybrid platforms of graphane-graphene 2D structures: prototypes for atomically precise nanoelectronics.

    PubMed

    Mota, F de B; Rivelino, R; Medeiros, P V C; Mascarenhas, A J S; de Castilho, C M C

    2014-11-21

    First-principles calculations demonstrate that line/ribbon defects, resulting from a controlled dehydrogenation in graphane, lead to the formation of low-dimensional electron-rich tracks in a monolayer. The present simulations point out that hybrid graphane-graphene nanostructures exhibit important elements, greatly required for the fabrication of efficient electronic circuits at the atomic level. PMID:25285905

  8. Raman enhancement effect on two-dimensional layered materials: graphene, h-BN and MoS2.

    PubMed

    Ling, Xi; Fang, Wenjing; Lee, Yi-Hsien; Araujo, Paulo T; Zhang, Xu; Rodriguez-Nieva, Joaquin F; Lin, Yuxuan; Zhang, Jin; Kong, Jing; Dresselhaus, Mildred S

    2014-06-11

    Realizing Raman enhancement on a flat surface has become increasingly attractive after the discovery of graphene-enhanced Raman scattering (GERS). Two-dimensional (2D) layered materials, exhibiting a flat surface without dangling bonds, were thought to be strong candidates for both fundamental studies of this Raman enhancement effect and its extension to meet practical applications requirements. Here, we study the Raman enhancement effect on graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2), by using the copper phthalocyanine (CuPc) molecule as a probe. This molecule can sit on these layered materials in a face-on configuration. However, it is found that the Raman enhancement effect, which is observable on graphene, hBN, and MoS2, has different enhancement factors for the different vibrational modes of CuPc, depending strongly on the surfaces. Higher-frequency phonon modes of CuPc (such as those at 1342, 1452, 1531 cm(-1)) are enhanced more strongly on graphene than that on h-BN, while the lower frequency phonon modes of CuPc (such as those at 682, 749, 1142, 1185 cm(-1)) are enhanced more strongly on h-BN than that on graphene. MoS2 demonstrated the weakest Raman enhancement effect as a substrate among these three 2D materials. These differences are attributed to the different enhancement mechanisms related to the different electronic properties and chemical bonds exhibited by the three substrates: (1) graphene is zero-gap semiconductor and has a nonpolar C-C bond, which induces charge transfer (2) h-BN is insulating and has a strong B-N bond, while (3) MoS2 is semiconducting with the sulfur atoms on the surface and has a polar covalent bond (Mo-S) with the polarity in the vertical direction to the surface. Therefore, the different Raman enhancement mechanisms differ for each material: (1) charge transfer may occur for graphene; (2) strong dipole-dipole coupling may occur for h-BN, and (3) both charge transfer and dipole-dipole coupling may

  9. Raman enhancement effect on two-dimensional layered materials: graphene, h-BN and MoS2.

    PubMed

    Ling, Xi; Fang, Wenjing; Lee, Yi-Hsien; Araujo, Paulo T; Zhang, Xu; Rodriguez-Nieva, Joaquin F; Lin, Yuxuan; Zhang, Jin; Kong, Jing; Dresselhaus, Mildred S

    2014-06-11

    Realizing Raman enhancement on a flat surface has become increasingly attractive after the discovery of graphene-enhanced Raman scattering (GERS). Two-dimensional (2D) layered materials, exhibiting a flat surface without dangling bonds, were thought to be strong candidates for both fundamental studies of this Raman enhancement effect and its extension to meet practical applications requirements. Here, we study the Raman enhancement effect on graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2), by using the copper phthalocyanine (CuPc) molecule as a probe. This molecule can sit on these layered materials in a face-on configuration. However, it is found that the Raman enhancement effect, which is observable on graphene, hBN, and MoS2, has different enhancement factors for the different vibrational modes of CuPc, depending strongly on the surfaces. Higher-frequency phonon modes of CuPc (such as those at 1342, 1452, 1531 cm(-1)) are enhanced more strongly on graphene than that on h-BN, while the lower frequency phonon modes of CuPc (such as those at 682, 749, 1142, 1185 cm(-1)) are enhanced more strongly on h-BN than that on graphene. MoS2 demonstrated the weakest Raman enhancement effect as a substrate among these three 2D materials. These differences are attributed to the different enhancement mechanisms related to the different electronic properties and chemical bonds exhibited by the three substrates: (1) graphene is zero-gap semiconductor and has a nonpolar C-C bond, which induces charge transfer (2) h-BN is insulating and has a strong B-N bond, while (3) MoS2 is semiconducting with the sulfur atoms on the surface and has a polar covalent bond (Mo-S) with the polarity in the vertical direction to the surface. Therefore, the different Raman enhancement mechanisms differ for each material: (1) charge transfer may occur for graphene; (2) strong dipole-dipole coupling may occur for h-BN, and (3) both charge transfer and dipole-dipole coupling may

  10. A highly sensitive pressure sensor using a double-layered graphene structure for tactile sensing.

    PubMed

    Chun, Sungwoo; Kim, Youngjun; Oh, Hyeong-Sik; Bae, Giyeol; Park, Wanjun

    2015-07-21

    In this paper, we propose a graphene sensor using two separated single-layered graphenes on a flexible substrate for use as a pressure sensor, such as for soft electronics. The working pressure corresponds to the range in which human perception recognizes surface morphologies. A specific design of the sensor structure drives the piezoresistive character due to the contact resistance between two graphene layers and the electromechanical properties of graphene itself. Accordingly, sensitivity in resistance change is given by two modes for low pressure (-0.24 kPa(-1)) and high pressure (0.039 kPa(-1)) with a crossover pressure (700 Pa). This sensor can detect infinitesimal pressure as low as 0.3 Pa with uniformly applied vertical force. With the attachment of the artificial fingerprint structure (AFPS) on the sensor, the detection ability for both the locally generated shear force and actual human touch confirms recognition of the surface morphology constructed by periodic structures. PMID:26098064

  11. The effect of spin-orbit coupling in band structure of few-layer graphene

    SciTech Connect

    Sahdan, Muhammad Fauzi Darma, Yudi

    2014-03-24

    Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. This can be happened due to spin-orbit coupling and time-reversal symmetry. Moreover, the edge current flows through their edge or surface depends on its spin orientation and also it is robust against non-magnetic impurities. Therefore, topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of few-layer graphene by using this model with analytical approach. The results of our calculations show that the gap opening occurs at K and K’ point, not only in single layer, but also in bilayer and trilayer graphene.

  12. A highly sensitive pressure sensor using a double-layered graphene structure for tactile sensing.

    PubMed

    Chun, Sungwoo; Kim, Youngjun; Oh, Hyeong-Sik; Bae, Giyeol; Park, Wanjun

    2015-07-21

    In this paper, we propose a graphene sensor using two separated single-layered graphenes on a flexible substrate for use as a pressure sensor, such as for soft electronics. The working pressure corresponds to the range in which human perception recognizes surface morphologies. A specific design of the sensor structure drives the piezoresistive character due to the contact resistance between two graphene layers and the electromechanical properties of graphene itself. Accordingly, sensitivity in resistance change is given by two modes for low pressure (-0.24 kPa(-1)) and high pressure (0.039 kPa(-1)) with a crossover pressure (700 Pa). This sensor can detect infinitesimal pressure as low as 0.3 Pa with uniformly applied vertical force. With the attachment of the artificial fingerprint structure (AFPS) on the sensor, the detection ability for both the locally generated shear force and actual human touch confirms recognition of the surface morphology constructed by periodic structures.

  13. In situ formation of graphene layers on graphite surfaces for efficient anodes of microbial fuel cells.

    PubMed

    Tang, Jiahuan; Chen, Shanshan; Yuan, Yong; Cai, Xixi; Zhou, Shungui

    2015-09-15

    Graphene can be used to improve the performance of the anode in a microbial fuel cell (MFC) due to its good biocompatibility, high electrical conductivity and large surface area. However, the chemical production and modification of the graphene on the anode are environmentally hazardous because of the use of various harmful chemicals. This study reports a novel method based on the electrochemical exfoliation of a graphite plate (GP) for the in situ formation of graphene layers on the surface of a graphite electrode. When the resultant graphene-layer-based graphite plate electrode (GL/GP) was used as an anode in an MFC, a maximum power density of 0.67 ± 0.034 W/m(2) was achieved. This value corresponds to 1.72-, 1.56- and 1.26-times the maximum power densities of the original GP, exfoliated-graphene-modified GP (EG/GP) and chemically-reduced-graphene-modified GP (rGO/GP) anodes, respectively. Electrochemical measurements revealed that the high performance of the GL/GP anode was attributable to its macroporous structure, improved electron transfer and high electrochemical capacitance. The results demonstrated that the proposed method is a facile and environmentally friendly synthesis technique for the fabrication of high-performance graphene-based electrodes for use in microbial energy harvesting. PMID:25950933

  14. Basics of quantum field theory of electromagnetic interaction processes in single-layer graphene

    NASA Astrophysics Data System (ADS)

    Hieu Nguyen, Van

    2016-09-01

    The content of this work is the study of electromagnetic interaction in single-layer graphene by means of the perturbation theory. The interaction of electromagnetic field with Dirac fermions in single-layer graphene has a peculiarity: Dirac fermions in graphene interact not only with the electromagnetic wave propagating within the graphene sheet, but also with electromagnetic field propagating from a location outside the graphene sheet and illuminating this sheet. The interaction Hamiltonian of the system comprising electromagnetic field and Dirac fermions fields contains the limits at graphene plane of electromagnetic field vector and scalar potentials which can be shortly called boundary electromagnetic field. The study of S-matrix requires knowing the limits at graphene plane of 2-point Green functions of electromagnetic field which also can be shortly called boundary 2-point Green functions of electromagnetic field. As the first example of the application of perturbation theory, the second order terms in the perturbative expansions of boundary 2-point Green functions of electromagnetic field as well as of 2-point Green functions of Dirac fermion fields are explicitly derived. Further extension of the application of perturbation theory is also discussed.

  15. Hydrothermal synthesis of highly nitrogen-doped few-layer graphene via solid–gas reaction

    SciTech Connect

    Liang, Xianqing; Zhong, Jun; Shi, Yalin; Guo, Jin; Huang, Guolong; Hong, Caihao; Zhao, Yidong

    2015-01-15

    Highlights: • A novel approach to synthesis of N-doped few-layer graphene has been developed. • The high doping levels of N in products are achieved. • XPS and XANES results reveal a thermal transformation of N bonding configurations. • The developed method is cost-effective and eco-friendly. - Abstract: Nitrogen-doped (N-doped) graphene sheets with high doping concentration were facilely synthesized through solid–gas reaction of graphene oxide (GO) with ammonia vapor in a self-designed hydrothermal system. The morphology, surface chemistry and electronic structure of N-doped graphene sheets were investigated by TEM, AFM, XRD, XPS, XANES and Raman characterizations. Upon hydrothermal treatment, up to 13.22 at% of nitrogen could be introduced into the crumpled few-layer graphene sheets. Both XPS and XANES analysis reveal that the reaction between oxygen functional groups in GO and ammonia vapor produces amide and amine species in hydrothermally treated GO (HTGO). Subsequent thermal annealing of the resultant HTGO introduces a gradual transformation of nitrogen bonding configurations in graphene sheets from amine N to pyridinic and graphitic N with the increase of annealing temperature. This study provides a simple but cost-effective and eco-friendly method to prepare N-doped graphene materials in large-scale for potential applications.

  16. In situ formation of graphene layers on graphite surfaces for efficient anodes of microbial fuel cells.

    PubMed

    Tang, Jiahuan; Chen, Shanshan; Yuan, Yong; Cai, Xixi; Zhou, Shungui

    2015-09-15

    Graphene can be used to improve the performance of the anode in a microbial fuel cell (MFC) due to its good biocompatibility, high electrical conductivity and large surface area. However, the chemical production and modification of the graphene on the anode are environmentally hazardous because of the use of various harmful chemicals. This study reports a novel method based on the electrochemical exfoliation of a graphite plate (GP) for the in situ formation of graphene layers on the surface of a graphite electrode. When the resultant graphene-layer-based graphite plate electrode (GL/GP) was used as an anode in an MFC, a maximum power density of 0.67 ± 0.034 W/m(2) was achieved. This value corresponds to 1.72-, 1.56- and 1.26-times the maximum power densities of the original GP, exfoliated-graphene-modified GP (EG/GP) and chemically-reduced-graphene-modified GP (rGO/GP) anodes, respectively. Electrochemical measurements revealed that the high performance of the GL/GP anode was attributable to its macroporous structure, improved electron transfer and high electrochemical capacitance. The results demonstrated that the proposed method is a facile and environmentally friendly synthesis technique for the fabrication of high-performance graphene-based electrodes for use in microbial energy harvesting.

  17. Suppressing Manganese Dissolution from Lithium Manganese Oxide Spinel Cathodes with Single-Layer Graphene

    SciTech Connect

    Jaber-Ansari, Laila; Puntambekar, Kanan P.; Kim, Soo; Aykol, Muratahan; Luo, Langli; Wu, Jinsong; Myers, Benjamin D.; Iddir, Hakim; Russell, John T.; Saldana, Spencer J.; Kumar, Rajan; Thackeray, Michael M.; Curtiss, Larry A.; Dravid, Vinayak P.; Wolverton, Christopher M.; Hersam, Mark C.

    2015-06-24

    Spinel-structured LiMn 2 O 4 (LMO) is a desirable cathode material for Li-ion batteries due to its low cost, abundance, and high power capability. However, LMO suffers from limited cycle life that is triggered by manganese dissolution into the electrolyte during electrochemical cycling. Here, it is shown that single-layer graphene coatings suppress manganese dissolution, thus enhancing the performance and lifetime of LMO cathodes. Relative to lithium cells with uncoated LMO cathodes, cells with graphene-coated LMO cathodes provide improved capacity retention with enhanced cycling stability. X-ray photoelectron spectroscopy reveals that graphene coatings inhibit manganese depletion from the LMO surface. Additionally, transmission electron microscopy demonstrates that a stable solid electrolyte interphase is formed on graphene, which screens the LMO from direct contact with the electrolyte. Density functional theory calculations provide two mechanisms for the role of graphene in the suppression of manganese dissolution. First, common defects in single-layer graphene are found to allow the transport of lithium while concurrently acting as barriers for manganese diffusion. Second, graphene can chemically interact with Mn 3+ at the LMO electrode surface, promoting an oxidation state change to Mn 4+ , which suppresses dissolution.

  18. A graphene meta-interface for enhancing the stretchability of brittle oxide layers.

    PubMed

    Won, Sejeong; Jang, Jae-Won; Choi, Hyung-Jin; Kim, Chang-Hyun; Lee, Sang Bong; Hwangbo, Yun; Kim, Kwang-Seop; Yoon, Soon-Gil; Lee, Hak-Joo; Kim, Jae-Hyun; Lee, Soon-Bok

    2016-03-01

    Oxide materials have recently attracted much research attention for applications in flexible and stretchable electronics due to their excellent electrical properties and their compatibility with established silicon semiconductor processes. Their widespread uptake has been hindered, however, by the intrinsic brittleness and low stretchability. Here we investigate the use of a graphene meta-interface to enhance the electromechanical stretchability of fragile oxide layers. Electromechanical tensile tests of indium tin oxide (ITO) layers on polymer substrates were carried out with in situ observations using an optical microscope. It was found that the graphene meta-interface reduced the strain transfer between the ITO layer and the substrate, and this behavior was well described using a shear lag model. The graphene meta-interface provides a novel pathway for realizing flexible and stretchable electronic applications based on oxide layers. PMID:26540317

  19. Tunable and Sizable Band Gap of Single Layer Graphene Sandwiched between Hexagonal Boron Nitride

    NASA Astrophysics Data System (ADS)

    Zheng, Jiaxin; Qu, Heruge; Liu, Qihang; Qin, Rui; Zhou, Jing; Yu, Dapeng; Gao, Zhengxiang; Lu, Jing; Luo, Guangfu; Nagase, Shigeru; Mei, Wai-Ning

    2012-02-01

    It is a big challenge to open a tunable and sizable band gap of single layer graphene without big loss in structural integrity and carrier mobility. By using density functional theory calculations, we show that the band gap of single layer graphene can be opened to 0.16 (without electrical field) and 0.34 eV (with a strong electrical field) when sandwiched between two hexagonal boron nitride single layers in a proper way. The zero-field band gaps are increased by about 50% when many-body effects are included. Ab initio quantum transport simulation of a dual-gated FET out of such a sandwich structure further confirms an electrical field-enhanced transport gap. The tunable and sizeable band gap and structural integrity render this sandwich structure a promising candidate for high-performance single layer graphene field effect transistors.

  20. Giant enhancement of the third harmonic in graphene integrated in a layered structure

    NASA Astrophysics Data System (ADS)

    Savostianova, N. A.; Mikhailov, S. A.

    2015-11-01

    Graphene was shown to have strongly nonlinear electrodynamic properties. In particular, being irradiated by an electromagnetic wave with the frequency ω, it can efficiently generate higher frequency harmonics. Here, we predict that in a specially designed structure "graphene— dielectric—metal" the third-harmonic ( 3 ω ) intensity can be increased by more than two orders of magnitude as compared to an isolated graphene layer.

  1. Molecular dynamics calculation of the thermal conductivity coefficient of single-layer and multilayer graphene sheets

    NASA Astrophysics Data System (ADS)

    Selezenev, A. A.; Aleinikov, A. Yu.; Ganchuk, N. S.; Ganchuk, S. N.; Jones, R. E.; Zimmerman, J. A.

    2013-04-01

    The thermal conductivity coefficients of single-layer and multilayer graphene sheets have been calculated using the molecular dynamics simulation. Calculations have been performed for graphene sheets with lengths in the range 20-130 nm and at average temperatures in the range 230-630 K. The results obtained have been compared with the experimental data and results of calculations carried out in other works.

  2. Chemical vapour deposition growth and Raman characterization of graphene layers and carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Lai, Y.-C.; Rafailov, P. M.; Vlaikova, E.; Marinova, V.; Lin, S. H.; Yu, P.; Yu, S.-C.; Chi, G. C.; Dimitrov, D.; Sveshtarov, P.; Mehandjiev, V.; Gospodinov, M. M.

    2016-02-01

    Single-layer graphene films were grown by chemical vapour deposition (CVD) on Cu foil. The CVD process was complemented by plasma enhancement to grow also vertically aligned multiwalled carbon nanotubes using Ni nanoparticles as catalyst. The obtained samples were characterized by Raman spectroscopy analysis. Nature of defects in the samples and optimal growth conditions leading to achieve high quality of graphene and carbon nanotubes are discussed.

  3. Overview of the Use of Graphene in Electric Double Layer Capacitors

    NASA Astrophysics Data System (ADS)

    Coleman, Arthur

    2012-10-01

    Advances in the manufacture and optimization of Electric Double Layer Capacitors or ultra-capacitors may make them a good alternative to batteries. Using graphene in the EDLC layers seems to limit the high self-discharge and voltage loss on discharge that plagues ultra-capacitors.

  4. Role of metallic substrate on the plasmon modes in double-layer graphene structures

    NASA Astrophysics Data System (ADS)

    Cruz, G. Gonzalez de la

    2015-07-01

    Novel heterostructures combining different layered materials offer new opportunities for applications and fundamental studies of collective excitations driven by interlayer Coulomb interactions. In this work, we have investigated the influence of the metallic-like substrate on the plasmon spectrum of a double layer graphene system and a structure consisting of conventional two-dimensional electron gas (2DEG) immersed in a semiconductor quantum well and a graphene sheet with an interlayer separation of d. Long-range Coulomb interactions between substrate and graphene layered systems lead a new set of spectrum plasmons. At long wavelengths (q→0) the acoustic modes (ω~q) depend, besides on the carrier density in each layer, on the distance between the first carrier layer and the substrate in both structures. Furthermore, in the relativistic/nonrelativistic layered structure an undamped acoustic mode emerges for a certain interlayer critical distance dc. On the other hand, the optical plasmon modes emerging from the coupling of the double-layer systems and the substrate, both start at finite frequency at q=0 in contrast to the collective excitation spectrum ω~q1/2 reported in the literature for double-layer graphene structures.

  5. A graphene meta-interface for enhancing the stretchability of brittle oxide layers

    NASA Astrophysics Data System (ADS)

    Won, Sejeong; Jang, Jae-Won; Choi, Hyung-Jin; Kim, Chang-Hyun; Lee, Sang Bong; Hwangbo, Yun; Kim, Kwang-Seop; Yoon, Soon-Gil; Lee, Hak-Joo; Kim, Jae-Hyun; Lee, Soon-Bok

    2016-02-01

    Oxide materials have recently attracted much research attention for applications in flexible and stretchable electronics due to their excellent electrical properties and their compatibility with established silicon semiconductor processes. Their widespread uptake has been hindered, however, by the intrinsic brittleness and low stretchability. Here we investigate the use of a graphene meta-interface to enhance the electromechanical stretchability of fragile oxide layers. Electromechanical tensile tests of indium tin oxide (ITO) layers on polymer substrates were carried out with in situ observations using an optical microscope. It was found that the graphene meta-interface reduced the strain transfer between the ITO layer and the substrate, and this behavior was well described using a shear lag model. The graphene meta-interface provides a novel pathway for realizing flexible and stretchable electronic applications based on oxide layers.Oxide materials have recently attracted much research attention for applications in flexible and stretchable electronics due to their excellent electrical properties and their compatibility with established silicon semiconductor processes. Their widespread uptake has been hindered, however, by the intrinsic brittleness and low stretchability. Here we investigate the use of a graphene meta-interface to enhance the electromechanical stretchability of fragile oxide layers. Electromechanical tensile tests of indium tin oxide (ITO) layers on polymer substrates were carried out with in situ observations using an optical microscope. It was found that the graphene meta-interface reduced the strain transfer between the ITO layer and the substrate, and this behavior was well described using a shear lag model. The graphene meta-interface provides a novel pathway for realizing flexible and stretchable electronic applications based on oxide layers. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05412e

  6. Cost-Effective Systems for Atomic Layer Deposition

    ERIC Educational Resources Information Center

    Lubitz, Michael; Medina, Phillip A., IV; Antic, Aleks; Rosin, Joseph T.; Fahlman, Bradley D.

    2014-01-01

    Herein, we describe the design and testing of two different home-built atomic layer deposition (ALD) systems for the growth of thin films with sub-monolayer control over film thickness. The first reactor is a horizontally aligned hot-walled reactor with a vacuum purging system. The second reactor is a vertically aligned cold-walled reactor with a…

  7. Vibration atomic layer deposition for conformal nanoparticle coating

    SciTech Connect

    Park, Suk Won; Woo Kim, Jun; Jong Choi, Hyung; Hyung Shim, Joon

    2014-01-15

    A vibration atomic layer deposition reactor was developed for fabricating a conformal thin-film coating on nanosize particles. In this study, atomic layer deposition of 10–15-nm-thick Al{sub 2}O{sub 3} films was conducted on a high-surface-area acetylene black powder with particle diameters of 200–250 nm. Intense vibration during the deposition resulted in the effective separation of particles, overcoming the interparticle agglomeration force and enabling effective diffusion of the precursor into the powder chunk; this phenomenon led to the formation of a conformal film coating on the nanopowder particles. It was also confirmed that the atomic layer deposition Al{sub 2}O{sub 3} films initially grew on the high-surface-area acetylene black powder particles as discrete islands, presumably because chemisorption of the precursor and water occurred only on a few sites on the high-surface-area acetylene black powder surface. Relatively sluggish growth of the films during the initial atomic layer deposition cycles was identified from composition analysis.

  8. Stable aqueous dispersions of functionalized multi-layer graphene by pulsed underwater plasma exfoliation of graphite

    NASA Astrophysics Data System (ADS)

    Meyer-Plath, Asmus; Beckert, Fabian; Tölle, Folke J.; Sturm, Heinz; Mülhaupt, Rolf

    2016-02-01

    A process was developed for graphite particle exfoliation in water to stably dispersed multi-layer graphene. It uses electrohydraulic shockwaves and the functionalizing effect of solution plasma discharges in water. The discharges were excited by 100 ns high voltage pulsing of graphite particle chains that bridge an electrode gap. The underwater discharges allow simultaneous exfoliation and chemical functionalization of graphite particles to partially oxidized multi-layer graphene. Exfoliation is caused by shockwaves that result from rapid evaporation of carbon and water to plasma-excited gas species. Depending on discharge energy and locus of ignition, the shockwaves cause stirring, erosion, exfoliation and/or expansion of graphite flakes. The process was optimized to produce long-term stable aqueous dispersions of multi-layer graphene from graphite in a single process step without requiring addition of intercalants, surfactants, binders or special solvents. A setup was developed that allows continuous production of aqueous dispersions of flake size-selected multi-layer graphenes. Due to the well-preserved sp2-carbon structure, thin films made from the dispersed graphene exhibited high electrical conductivity. Underwater plasma discharge processing exhibits high innovation potential for morphological and chemical modifications of carbonaceous materials and surfaces, especially for the generation of stable dispersions of two-dimensional, layered materials.

  9. Femtosecond laser induced periodic surface structures on multi-layer graphene

    SciTech Connect

    Beltaos, Angela Kovačević, Aleksander G.; Matković, Aleksandar; Ralević, Uroš; Savić-Šević, Svetlana; Jovanović, Djordje; Jelenković, Branislav M.; Gajić, Radoš

    2014-11-28

    In this work, we present an observation of laser induced periodic surface structures (LIPSS) on graphene. LIPSS on other materials have been observed for nearly 50 years, but until now, not on graphene. Our findings for LIPSS on multi-layer graphene were consistent with previous reports of LIPSS on other materials, thus classifying them as high spatial frequency LIPSS. LIPSS on multi-layer graphene were generated in an air environment by a linearly polarized femtosecond laser with excitation wavelength λ of 840 nm, pulse duration τ of ∼150 fs, and a fluence F of ∼4.3–4.4 mJ/cm{sup 2}. The observed LIPSS were perpendicular to the laser polarization and had dimensions of width w of ∼30–40 nm and length l of ∼0.5–1.5 μm, and spatial periods Λ of ∼70–100 nm (∼λ/8–λ/12), amongst the smallest of spatial periods reported for LIPSS on other materials. The spatial period and width of the LIPSS were shown to decrease for an increased number of laser shots. The experimental results support the leading theory behind high spatial frequency LIPSS formation, implying the involvement of surface plasmon polaritons. This work demonstrates a new way to pattern multi-layer graphene in a controllable manner, promising for a variety of emerging graphene/LIPSS applications.

  10. Li Storage Properties of Disordered Single- and Bi-Layer Graphene

    NASA Astrophysics Data System (ADS)

    Yildirim, H.; Kinaci, Alper; Zhao, Zhi-Jian; Chan, Maria; Greeley, Jeffrey P.

    2015-03-01

    Due to the limited capacity of the traditional intercalation-type graphite materials (373 mAh/g, LiC6) , much effort has been made to explore new anode materials to meet the increasing demand for batteries of high energy density. Among them, graphene has much attracted attention as an ideal platform for higher Li storage capacity, and for obtaining fundamental understanding of Li-C interaction. In this respect, we performed extensive first-principles calculations to model Li adsorption and intercalation in single- and bi-layer graphene, which are activated by defects for Li adsorption. For a wide range of Li coverages, the calculations predict that defect-free single layer graphene is not thermodynamically favorable compared to bulk metallic Li. However, graphene activated by defects are generally found to bind Li more strongly, and the interaction strength is sensitive to both the nature of defects and their densities. A rigorous thermodynamic analysis establishes the theoretical Li storage capacities of the defected graphene, and in some cases, these capacities are found to approach, although not exceed, those of bulk graphite. We will provide a performance comparison between defected single- and bi-layer graphene and bulk-graphite for Li storage capacities. A detailed analysis of the effect of the van der Walls (vdW) interactions will also be presented.

  11. Optical reflectivity and Raman scattering in few-layer-thick graphene highly doped by K and Rb.

    PubMed

    Jung, Naeyoung; Kim, Bumjung; Crowther, Andrew C; Kim, Namdong; Nuckolls, Colin; Brus, Louis

    2011-07-26

    We report the optical reflectivity and Raman scattering of few layer (L) graphene exposed to K and Rb vapors. Samples many tens of layers thick show the reflectivity and Raman spectra of the stage 1 bulk alkali intercalation compounds (GICs) KC(8) and RbC(8). However, these bulk optical and Raman properties only begin to appear in samples more than about 15 graphene layers thick. The 1 L to 4 L alkali exposed graphene Raman spectra are profoundly different than the Breit-Wigner-Fano (BWF) spectra of the bulk stage 1 compounds. Samples less than 10 layers thick show Drude-like plasma edge reflectivity dip in the visible; alkali exposed few layer graphenes are significantly more transparent than intrinsic graphene. Simulations show the in-plane free electron density is lower than in the bulk stage 1 GICs. In few layer graphenes, alkalis both intercalate between layers and adsorb on the graphene surfaces. Charge transfer electrically dopes the graphene sheets to densities near and above 10(+14) electrons/cm(2). New intrinsic Raman modes at 1128 and 1264 cm(-1) are activated by in-plane graphene zone folding caused by strongly interacting, locally crystalline alkali adlayers. The K Raman spectra are independent of thickness for L = 1-4, indicating that charge transfer from adsorbed and intercalated K layers are similar. The Raman G mode is downshifted and significantly broadened from intrinsic graphene. In contrast, the Rb spectra vary strongly with L and show increased doping by intercalated alkali as L increases. Rb adlayers appear to be disordered liquids, while intercalated layers are locally crystalline solids. A significant intramolecular G mode electronic resonance Raman enhancement is observed in K exposed graphene, as compared with intrinsic graphene. PMID:21682332

  12. Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates

    SciTech Connect

    Clancey, Joel W.; Cavanagh, Andrew S.; Kukreja, Ratandeep S.; Kongkanand, Anusorn; George, Steven M.

    2015-01-15

    Platinum (Pt) atomic layer deposition (ALD) usually yields Pt nanoparticles during initial film growth. In contrast, deposition of continuous and ultrathin Pt films is needed for many important applications, such as the oxygen reduction reaction in polymer electrolyte membrane (PEM) fuel cells. A continuous and high radius of curvature Pt film is more stable and has a higher area-specific activity than the Pt nanoparticles commonly used in PEM fuel cells. However, the Pt film must be ultrathin and have a large surface area to be cost effective. In this paper, a review of earlier Pt ALD studies on flat substrates is presented that demonstrates that tungsten, with a higher surface energy than platinum, can serve as an adhesion layer to achieve Pt ALD films that are continuous at ultrathin thicknesses of ∼1.5 nm. This work utilized MeCpPtMe{sub 3} and H{sub 2} plasma as the Pt ALD reactants. The deposition of continuous and ultrathin Pt ALD films using MeCpPtMe{sub 3} and H{sub 2} plasma as the reactants is then studied on two high surface area substrate materials: TiO{sub 2} nanoparticles and 3M nanostructured thin film (NSTF). Transmission electron microscopy (TEM) showed uniform and continuous Pt films with thicknesses of ∼4 nm on the TiO{sub 2} nanoparticles. TEM with electron energy loss spectroscopy analysis revealed W ALD and Pt ALD films with thicknesses of ∼3 nm that were continuous and conformal on the high aspect ratio NSTF substrates. These results demonstrate that cost effective use of Pt ALD on high surface area substrates is possible for PEM fuel cells.

  13. Growth mode evolution of hafnium oxide by atomic layer deposition

    SciTech Connect

    Nie, Xianglong; Ma, Fei; Ma, Dayan; Xu, Kewei

    2014-01-15

    HfO{sub 2} thin films were deposited using tetrakis-ethylmethylamido hafnium and H{sub 2}O as precursors on silicon by atomic layer deposition (ALD). The morphology and microstructures at different ALD cycles were characterized by atomic force microscopy and high-resolution transmission electron microscopy. Based on the height–height correlation function and power spectral density function, quantitative analysis of surface morphologies was performed. Three characteristic dimensions (ξ{sub 1}, ξ{sub 2}, and ξ{sub 3}) corresponding to three surface structures, islands, local and global fluctuations, were identified. The evolution of ALD growth mode at range of the three critical scales was investigated, respectively. It suggests the transformation of growth mode from quasi two-dimensional layer-by-layer to three-dimensional island for global fluctuations.

  14. One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates

    PubMed Central

    Jiang, Shenglin; Zeng, Yike; Zhou, Wenli; Miao, Xiangshui; Yu, Yan

    2016-01-01

    Graphene deposited on various substrates has attracted the attention of the scientific and technical communities for use in a wide range of applications. Graphene on substrates is commonly produced by two types of methods, namely, methods that require a transfer step and transfer-free methods. Compared with methods that require a transfer step, transfer-free methods have a simpler procedure and a lower cost. Thus, transfer-free methods have considerable potential to meet the industrial and commercial demands of production methods. However, some limitations of the current transfer-free methods must be overcome, such as the high temperatures encountered during production, the relatively long manufacturing times, incompatibilities for both rigid and flexible substrates, and an inability to extend the process to other two-dimensional (2-D) atomic crystals. In this work, a room-temperature rubbing method is developed for the rapid transfer-free production of defect-free polycrystalline graphene on rigid and flexible substrates. Starting with inexpensive commercially obtained graphite powder, mono- and few-layer graphene can be fabricated directly on various substrates, with an average production time of less than one minute (from raw graphite to graphene on the substrate). Importantly, this method can be extended to other 2-D atomic crystals. PMID:26763292

  15. One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates.

    PubMed

    Jiang, Shenglin; Zeng, Yike; Zhou, Wenli; Miao, Xiangshui; Yu, Yan

    2016-01-01

    Graphene deposited on various substrates has attracted the attention of the scientific and technical communities for use in a wide range of applications. Graphene on substrates is commonly produced by two types of methods, namely, methods that require a transfer step and transfer-free methods. Compared with methods that require a transfer step, transfer-free methods have a simpler procedure and a lower cost. Thus, transfer-free methods have considerable potential to meet the industrial and commercial demands of production methods. However, some limitations of the current transfer-free methods must be overcome, such as the high temperatures encountered during production, the relatively long manufacturing times, incompatibilities for both rigid and flexible substrates, and an inability to extend the process to other two-dimensional (2-D) atomic crystals. In this work, a room-temperature rubbing method is developed for the rapid transfer-free production of defect-free polycrystalline graphene on rigid and flexible substrates. Starting with inexpensive commercially obtained graphite powder, mono- and few-layer graphene can be fabricated directly on various substrates, with an average production time of less than one minute (from raw graphite to graphene on the substrate). Importantly, this method can be extended to other 2-D atomic crystals. PMID:26763292

  16. Atomic and molecular layer deposition for surface modification

    SciTech Connect

    Vähä-Nissi, Mika; Sievänen, Jenni; Salo, Erkki; Heikkilä, Pirjo; Kenttä, Eija; Johansson, Leena-Sisko; Koskinen, Jorma T.; Harlin, Ali

    2014-06-01

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.

  17. Band engineering for novel two-dimensional atomic layers.

    PubMed

    Zeng, Qingsheng; Wang, Hong; Fu, Wei; Gong, Yongji; Zhou, Wu; Ajayan, Pulickel M; Lou, Jun; Liu, Zheng

    2015-04-24

    The discovery of graphene has sparked much interest in science and lead to the development of an ample variety of novel two-dimensional (2D) materials. With increasing research interest in the field of 2D materials in recent years, the researchers have shifted their focus from the synthesis to the modification of 2D materials, emphasizing their electronic structures. In this review, the possibilities of altering the band structures are discussed via three different approches: (1) alloying 2D materials, so called ternary 2D materials, such as hexagonal carbonized boron nitrides (h-BCN) and transition metal dichalcogenides (TMDs) ternary materials; (2) stacking 2D materials vertically, which results in 2D heterostructures named van der Waals (vdW) solids (using hexagonal boron nitrides (h-BN)/graphene and TMDs stacking as examples), and growing lateral TMDs heterostructrues; (3) controlling the thickness of 2D materials, that is, the number of layers. The electronic properties of some 2D materials are very sensitive to the thickness, such as in TMDs and black phosphorus (BP). The variations of band structures and the resulting physical properties are systematically discussed.

  18. Thermally Induced Dynamics of Dislocations in Graphene at Atomic Resolution.

    PubMed

    Gong, Chuncheng; Robertson, Alex W; He, Kuang; Lee, Gun-Do; Yoon, Euijoon; Allen, Christopher S; Kirkland, Angus I; Warner, Jamie H

    2015-10-27

    Thermally induced dislocation movements are important in understanding the effects of high temperature annealing on modifying the crystal structure. We use an in situ heating holder in an aberration corrected transmission electron microscopy to study the movement of dislocations in suspended monolayer graphene up to 800 °C. Control of temperature enables the differentiation of electron beam induced effects and thermally driven processes. At room temperature, the dynamics of dislocation behavior is driven by the electron beam irradiation at 80 kV; however at higher temperatures, increased movement of the dislocation is observed and provides evidence for the influence of thermal energy to the system. An analysis of the dislocation movement shows both climb and glide processes, including new complex pathways for migration and large nanoscale rapid jumps between fixed positions in the lattice. The improved understanding of the high temperature dislocation movement provides insights into annealing processes in graphene and the behavior of defects with increased heat.

  19. First-principles study on bottom-up fabrication process of atomically precise graphene nanoribbons

    NASA Astrophysics Data System (ADS)

    Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa

    2016-06-01

    We investigate the energetics of a polyanthracene formation in the bottom-up fabrication of atomically precise graphene nanoribbons on Au(111) using first-principles calculations based on the density functional theory. We show that the structure of precursor molecules plays a decisive role in the C–C coupling reaction. The reaction energy of the dimerization of anthracene dimers is a larger negative value than that of the dimerization of anthracene monomers, suggesting that the precursor molecule used in experiments has a favorable structure for graphene nanoribbon fabrication.

  20. Controlling dynamical thermal transport of biased bilayer graphene by impurity atoms

    NASA Astrophysics Data System (ADS)

    Rezania, Hamed; Yarmohammadi, Mohsen

    2016-07-01

    We address the dynamical thermal conductivity of biased bilayer graphene doped with acceptor impurity atoms for AA-stacking in the context of tight binding model Hamiltonian. The effect of scattering by dilute charged impurities is discussed in terms of the self-consistent Born approximation. Green's function approach has been exploited to find the behavior of thermal conductivity of bilayer graphene within the linear response theory. We have found the frequency dependence of thermal conductivity for different values of concentration and scattering strength of dopant impurity. Also the dependence of thermal conductivity on the impurity concentration and bias voltage has been investigated in details.

  1. Growing vertical ZnO nanorod arrays within graphite: efficient isolation of large size and high quality single-layer graphene.

    PubMed

    Ding, Ling; E, Yifeng; Fan, Louzhen; Yang, Shihe

    2013-07-18

    We report a unique strategy for efficiently exfoliating large size and high quality single-layer graphene directly from graphite into DMF dispersions by growing ZnO nanorod arrays between the graphene layers in graphite.

  2. On the hydrogen-graphene layers interactions, relevance to the onboard storage problem.

    PubMed

    Nechaev, Y S; Ochsner, A

    2012-10-01

    Empirical evaluations of fundamental characteristics of the physical and chemical interaction of hydrogen with graphene layers in different kinds of graphite and novel carbonaceous nanomaterials of graphene layer structure have been carried out. This was done by using the approaches of the thermodynamics of reversible and irreversible processes for analysis of the adsorption, absorption, diffusion, the temperature-programmed desorption (TPD) and other experimental data and comparing such analytical results with first-principles calculations. Such an analysis of a number of the known experimental and theoretical data has shown a real possibility of the multilayer specific adsorption (intercalation) of hydrogen between graphene layers in novel carbonaceous nanomaterials. This is of relevance for solving the bottle-neck problem of the hydrogen on-board storage in fuel-cell-powered vehicles, and other technical applications. PMID:23421196

  3. On the hydrogen-graphene layers interactions, relevance to the onboard storage problem.

    PubMed

    Nechaev, Y S; Ochsner, A

    2012-10-01

    Empirical evaluations of fundamental characteristics of the physical and chemical interaction of hydrogen with graphene layers in different kinds of graphite and novel carbonaceous nanomaterials of graphene layer structure have been carried out. This was done by using the approaches of the thermodynamics of reversible and irreversible processes for analysis of the adsorption, absorption, diffusion, the temperature-programmed desorption (TPD) and other experimental data and comparing such analytical results with first-principles calculations. Such an analysis of a number of the known experimental and theoretical data has shown a real possibility of the multilayer specific adsorption (intercalation) of hydrogen between graphene layers in novel carbonaceous nanomaterials. This is of relevance for solving the bottle-neck problem of the hydrogen on-board storage in fuel-cell-powered vehicles, and other technical applications.

  4. Few layered graphene Sheet decorated by ZnO Nanoparticles for anti-bacterial application

    NASA Astrophysics Data System (ADS)

    Bykkam, Satish; Narsingam, Sowmya; Ahmadipour, Mohsen; Dayakar, T.; Venkateswara Rao, K.; Shilpa Chakra, Ch.; Kalakotla, Shanker

    2015-07-01

    A widely soluble few layered graphene (FLG) sheets decorated by ZnO nano particles were prepared through hydrothermal method using ethylene glycol as a solvent and a reducing agent. The obtained FLG/ZnO composite material was characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM) and Raman spectroscopy. The anti-bacterial properties of ZnO nano particles decorated few layered graphenes were tested against Escherichia coli and Salmonella typhi by using well diffusion method. The results confirmed that FLG/ZnO has significant antibacterial activity more against S. typhi than E. coli. The obtained results from the current research work conclusively states that the ZnO nano particles which were decorated by few layered graphene possess a significant anti-bacterial activity.

  5. Electron dynamics of the buffer layer and bilayer graphene on SiC

    SciTech Connect

    Shearer, Alex J.; Caplins, Benjamin W.; Suich, David E.; Harris, Charles B.; Johns, James E.; Hersam, Mark C.

    2014-06-09

    Angle- and time-resolved two-photon photoemission (TPPE) was used to investigate electronic states in the buffer layer of 4H-SiC(0001). An image potential state (IPS) series was observed on this strongly surface-bound buffer layer, and dispersion measurements indicated free-electron-like behavior for all states in this series. These results were compared with TPPE taken on bilayer graphene, which also show the existence of a free-electron-like IPS series. Lifetimes for the n = 2, and n = 3 states were obtained from time-resolved TPPE; slightly increased lifetimes were observed in the bilayer graphene sample for the n = 2 the n = 3 states. Despite the large band gap of graphene at the center of the Brillouin zone, the lifetime results demonstrate that the graphene layers do not behave as a simple tunneling barrier, suggesting that the buffer layer and graphene overlayers play a direct role in the decay of IPS electrons.

  6. Graphene on a metal surface with an h-BN buffer layer: gap opening and N-doping

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Lu, Yunhao; Feng, Y. P.

    2016-04-01

    Graphene grown on a metal surface, Cu(111), with a boron-nitride (h-BN) buffer layer is studied. Our first-principles calculations reveal that charge is transferred from the copper substrate to graphene through the h-BN buffer layer which results in n-doped graphene in the absence of a gate voltage. More importantly, a gap of 0.2 eV, which is comparable to that of a typical narrow gap semiconductor, opens just 0.5 eV below the Fermi level at the Dirac point. The Fermi level can be easily shifted inside this gap to make graphene a semiconductor, which is crucial for graphene-based electronic devices. A graphene-based p-n junction can be realized with graphene eptaxially grown on a metal surface.

  7. Synthesis of transparent vertically aligned TiO2 nanotubes on a few-layer graphene (FLG) film.

    PubMed

    Cottineau, Thomas; Albrecht, Arnaud; Janowska, Izabela; Macher, Nicolas; Bégin, Dominique; Ledoux, Marc Jacques; Pronkin, Sergey; Savinova, Elena; Keller, Nicolas; Keller, Valérie; Pham-Huu, Cuong

    2012-01-30

    Novel transparent 1D-TiO(2)/few-layer graphene electrodes are realised by the anodic growth of vertically aligned TiO(2) nano-tubes on a few-layer graphene film coated on a glass substrate. PMID:22057023

  8. Graphene as a transparent conducting and surface field layer in planar Si solar cells.

    PubMed

    Kumar, Rakesh; Mehta, Bodh R; Bhatnagar, Mehar; S, Ravi; Mahapatra, Silika; Salkalachen, Saji; Jhawar, Pratha

    2014-01-01

    This work presents an experimental and finite difference time domain (FDTD) simulation-based study on the application of graphene as a transparent conducting layer on a planar and untextured crystalline p-n silicon solar cell. A high-quality monolayer graphene with 97% transparency and 350 Ω/□ sheet resistance grown by atmospheric pressure chemical vapor deposition method was transferred onto planar Si cells. An increase in efficiency from 5.38% to 7.85% was observed upon deposition of graphene onto Si cells, which further increases to 8.94% upon SiO2 deposition onto the graphene/Si structure. A large increase in photon conversion efficiency as a result of graphene deposition shows that the electronic interaction and the presence of an electric field at the graphene/Si interface together play an important role in this improvement and additionally lead to a reduction in series resistance due to the conducting nature of graphene. PMID:25114642

  9. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide.

    PubMed

    Emtsev, Konstantin V; Bostwick, Aaron; Horn, Karsten; Jobst, Johannes; Kellogg, Gary L; Ley, Lothar; McChesney, Jessica L; Ohta, Taisuke; Reshanov, Sergey A; Röhrl, Jonas; Rotenberg, Eli; Schmid, Andreas K; Waldmann, Daniel; Weber, Heiko B; Seyller, Thomas

    2009-03-01

    Graphene, a single monolayer of graphite, has recently attracted considerable interest owing to its novel magneto-transport properties, high carrier mobility and ballistic transport up to room temperature. It has the potential for technological applications as a successor of silicon in the post Moore's law era, as a single-molecule gas sensor, in spintronics, in quantum computing or as a terahertz oscillator. For such applications, uniform ordered growth of graphene on an insulating substrate is necessary. The growth of graphene on insulating silicon carbide (SiC) surfaces by high-temperature annealing in vacuum was previously proposed to open a route for large-scale production of graphene-based devices. However, vacuum decomposition of SiC yields graphene layers with small grains (30-200 nm; refs 14-16). Here, we show that the ex situ graphitization of Si-terminated SiC(0001) in an argon atmosphere of about 1 bar produces monolayer graphene films with much larger domain sizes than previously attainable. Raman spectroscopy and Hall measurements confirm the improved quality of the films thus obtained. High electronic mobilities were found, which reach mu=2,000 cm (2) V(-1) s(-1) at T=27 K. The new growth process introduced here establishes a method for the synthesis of graphene films on a technologically viable basis.

  10. Substrate effect modulates adhesion and proliferation of fibroblast on graphene layer.

    PubMed

    Lin, Feng; Du, Feng; Huang, Jianyong; Chau, Alicia; Zhou, Yongsheng; Duan, Huiling; Wang, Jianxiang; Xiong, Chunyang

    2016-10-01

    Graphene is an emerging candidate for biomedical applications, including biosensor, drug delivery and scaffold biomaterials. Cellular functions and behaviors on different graphene-coated substrates, however, still remain elusive to a great extent. This paper explored the functional responses of cells such as adhesion and proliferation, to different kinds of substrates including coverslips, silicone, polydimethylsiloxane (PDMS) with different curing ratios, PDMS treated with oxygen plasma, and their counterparts coated with single layer graphene (SLG). Specifically, adherent cell number, spreading area and cytoskeleton configuration were exploited to characterize cell-substrate adhesion ability, while MTT assay was employed to test the proliferation capability of fibroblasts. Experimental outcome demonstrated graphene coating had excellent cytocompatibility, which could lead to an increase in early adhesion, spreading, proliferation, and remodeling of cytoskeletons of fibroblast cells. Notably, it was found that the underlying substrate effect, e.g., stiffness of substrate materials, could essentially regulate the adhesion and proliferation of cells cultured on graphene. The stiffer the substrates were, the stronger the abilities of adhesion and proliferation of fibroblasts were. This study not only deepens our understanding of substrate-modulated interfacial interactions between live cells and graphene, but also provides a valuable guidance for the design and application of graphene-based biomaterials in biomedical engineering. PMID:27451366

  11. Graphene as a transparent conducting and surface field layer in planar Si solar cells

    PubMed Central

    2014-01-01

    This work presents an experimental and finite difference time domain (FDTD) simulation-based study on the application of graphene as a transparent conducting layer on a planar and untextured crystalline p-n silicon solar cell. A high-quality monolayer graphene with 97% transparency and 350 Ω/□ sheet resistance grown by atmospheric pressure chemical vapor deposition method was transferred onto planar Si cells. An increase in efficiency from 5.38% to 7.85% was observed upon deposition of graphene onto Si cells, which further increases to 8.94% upon SiO2 deposition onto the graphene/Si structure. A large increase in photon conversion efficiency as a result of graphene deposition shows that the electronic interaction and the presence of an electric field at the graphene/Si interface together play an important role in this improvement and additionally lead to a reduction in series resistance due to the conducting nature of graphene. PMID:25114642

  12. Atomic-Layer-Confined Doping for Atomic-Level Insights into Visible-Light Water Splitting.

    PubMed

    Lei, Fengcai; Zhang, Lei; Sun, Yongfu; Liang, Liang; Liu, Katong; Xu, Jiaqi; Zhang, Qun; Pan, Bicai; Luo, Yi; Xie, Yi

    2015-08-01

    A model of doping confined in atomic layers is proposed for atomic-level insights into the effect of doping on photocatalysis. Co doping confined in three atomic layers of In2S3 was implemented with a lamellar hybrid intermediate strategy. Density functional calculations reveal that the introduction of Co ions brings about several new energy levels and increased density of states at the conduction band minimum, leading to sharply increased visible-light absorption and three times higher carrier concentration. Ultrafast transient absorption spectroscopy reveals that the electron transfer time of about 1.6 ps from the valence band to newly formed localized states is due to Co doping. The 25-fold increase in average recovery lifetime is believed to be responsible for the increased of electron-hole separation. The synthesized Co-doped In2S3 (three atomic layers) yield a photocurrent of 1.17 mA cm(-2) at 1.5 V vs. RHE, nearly 10 and 17 times higher than that of the perfect In2S3 (three atomic layers) and the bulk counterpart, respectively.

  13. Thermal transport across graphene and single layer hexagonal boron nitride

    SciTech Connect

    Zhang, Jingchao E-mail: yyue@whu.edu.cn; Hong, Yang; Yue, Yanan E-mail: yyue@whu.edu.cn

    2015-04-07

    As the dimensions of nanocircuits and nanoelectronics shrink, thermal energies are being generated in more confined spaces, making it extremely important and urgent to explore for efficient heat dissipation pathways. In this work, the phonon energy transport across graphene and hexagonal boron-nitride (h-BN) interface is studied using classic molecular dynamics simulations. Effects of temperature, interatomic bond strength, heat flux direction, and functionalization on interfacial thermal transport are investigated. It is found out that by hydrogenating graphene in the hybrid structure, the interfacial thermal resistance (R) between graphene and h-BN can be reduced by 76.3%, indicating an effective approach to manipulate the interfacial thermal transport. Improved in-plane/out-of-plane phonon couplings and broadened phonon channels are observed in the hydrogenated graphene system by analyzing its phonon power spectra. The reported R results monotonically decrease with temperature and interatomic bond strengths. No thermal rectification phenomenon is observed in this interfacial thermal transport. Results reported in this work give the fundamental knowledge on graphene and h-BN thermal transport and provide rational guidelines for next generation thermal interface material designs.

  14. Band gap engineering for single-layer graphene by using slow Li(+) ions.

    PubMed

    Ryu, Mintae; Lee, Paengro; Kim, Jingul; Park, Heemin; Chung, Jinwook

    2016-08-01

    In order to utilize the superb electronic properties of graphene in future electronic nano-devices, a dependable means of controlling the transport properties of its Dirac electrons has to be devised by forming a tunable band gap. We report on the ion-induced modification of the electronic properties of single-layer graphene (SLG) grown on a SiC(0001) substrate by doping low-energy (5 eV) Li(+) ions. We find the opening of a sizable and tunable band gap up to 0.85 eV, which depends on the Li(+) ion dose as well as the following thermal treatment, and is the largest band gap in the π-band of SLG by any means reported so far. Our Li 1s core-level data together with the valence band suggest that Li(+) ions do not intercalate below the topmost graphene layer, but cause a significant charge asymmetry between the carbon sublattices of SLG to drive the opening of the band gap. We thus provide a route to producing a tunable graphene band gap by doping Li(+) ions, which may play a pivotal role in the utilization of graphene in future graphene-based electronic nano-devices. PMID:27345294

  15. Theory of photon-electron interaction in single-layer graphene sheet

    NASA Astrophysics Data System (ADS)

    Nguyen, Bich Ha; Hieu Nguyen, Van; Bui, Dinh Hoi; Thu Phuong Le, Thi

    2015-12-01

    The purpose of this work is to elaborate the quantum theory of photon-electron interaction in a single-layer graphene sheet. Since the light source must be located outside the extremely thin graphene sheet, the problem must be formulated and solved in the three-dimensional physical space, in which the graphene sheet is a thin plane layer. It is convenient to use the orthogonal coordinate system in which the xOy coordinate plane is located in the middle of the plane graphene sheet and therefore the Oz axis is perpendicular to this plane. For the simplicity we assume that the quantum motions of electron in the directions parallel to the coordinate plane xOy and that along the direction of the Oz axis are independent. Then we have a relatively simple formula for the overall Hamiltonian of the electron gas in the graphene sheet. The explicit expressions of the wave functions of the charge carriers are easily derived. The electron-hole formalism is introduced, and the Hamiltonian of the interaction of some external quantum electromagnetic field with the charge carriers in the graphene sheet is established. From the expression of this interaction Hamiltonian it is straightforward to derive the matrix elements of photons with the Dirac fermion-Dirac hole pairs as well as with the electrons in the quantum well along the direction of the Oz axis.

  16. Band gap engineering for single-layer graphene by using slow Li+ ions

    NASA Astrophysics Data System (ADS)

    Ryu, Mintae; Lee, Paengro; Kim, Jingul; Park, Heemin; Chung, Jinwook

    2016-08-01

    In order to utilize the superb electronic properties of graphene in future electronic nano-devices, a dependable means of controlling the transport properties of its Dirac electrons has to be devised by forming a tunable band gap. We report on the ion-induced modification of the electronic properties of single-layer graphene (SLG) grown on a SiC(0001) substrate by doping low-energy (5 eV) Li+ ions. We find the opening of a sizable and tunable band gap up to 0.85 eV, which depends on the Li+ ion dose as well as the following thermal treatment, and is the largest band gap in the π-band of SLG by any means reported so far. Our Li 1s core-level data together with the valence band suggest that Li+ ions do not intercalate below the topmost graphene layer, but cause a significant charge asymmetry between the carbon sublattices of SLG to drive the opening of the band gap. We thus provide a route to producing a tunable graphene band gap by doping Li+ ions, which may play a pivotal role in the utilization of graphene in future graphene-based electronic nano-devices.

  17. Ultrathin two-dimensional atomic crystals as stable interfacial layer for improvement of lithium metal anode.

    PubMed

    Yan, Kai; Lee, Hyun-Wook; Gao, Teng; Zheng, Guangyuan; Yao, Hongbin; Wang, Haotian; Lu, Zhenda; Zhou, Yu; Liang, Zheng; Liu, Zhongfan; Chu, Steven; Cui, Yi

    2014-10-01

    Stable cycling of lithium metal anode is challenging due to the dendritic lithium formation and high chemical reactivity of lithium with electrolyte and nearly all the materials. Here, we demonstrate a promising novel electrode design by growing two-dimensional (2D) atomic crystal layers including hexagonal boron nitride (h-BN) and graphene directly on Cu metal current collectors. Lithium ions were able to penetrate through the point and line defects of the 2D layers during the electrochemical deposition, leading to sandwiched lithium metal between ultrathin 2D layers and Cu. The 2D layers afford an excellent interfacial protection of Li metal due to their remarkable chemical stability as well as mechanical strength and flexibility, resulting from the strong intralayer bonds and ultrathin thickness. Smooth Li metal deposition without dendritic and mossy Li formation was realized. We showed stable cycling over 50 cycles with Coulombic efficiency ∼97% in organic carbonate electrolyte with current density and areal capacity up to the practical value of 2.0 mA/cm(2)and 5.0 mAh/cm(2), respectively, which is a significant improvement over the unprotected electrodes in the same electrolyte.

  18. Applications of atomic layer deposition in solar cells.

    PubMed

    Niu, Wenbin; Li, Xianglin; Karuturi, Siva Krishna; Fam, Derrick Wenhui; Fan, Hongjin; Shrestha, Santosh; Wong, Lydia Helena; Tok, Alfred Iing Yoong

    2015-02-13

    Atomic layer deposition (ALD) provides a unique tool for the growth of thin films with excellent conformity and thickness control down to atomic levels. The application of ALD in energy research has received increasing attention in recent years. In this review, the versatility of ALD in solar cells will be discussed. This is specifically focused on the fabrication of nanostructured photoelectrodes, surface passivation, surface sensitization, and band-structure engineering of solar cell materials. Challenges and future directions of ALD in the applications of solar cells are also discussed.

  19. Magneto-transport properties of a random distribution of few-layer graphene patches

    NASA Astrophysics Data System (ADS)

    Iacovella, Fabrice; Trinsoutrot, Pierre; Mitioglu, Anatolie; Conédéra, Véronique; Pierre, Mathieu; Raquet, Bertrand; Goiran, Michel; Vergnes, Hugues; Caussat, Brigitte; Plochocka, Paulina; Escoffier, Walter

    2014-11-01

    In this study, we address the electronic properties of conducting films constituted of an array of randomly distributed few layer graphene patches and investigate on their most salient galvanometric features in the moderate and extreme disordered limit. We demonstrate that, in annealed devices, the ambipolar behaviour and the onset of Landau level quantization in high magnetic field constitute robust hallmarks of few-layer graphene films. In the strong disorder limit, however, the magneto-transport properties are best described by a variable-range hopping behaviour. A large negative magneto-conductance is observed at the charge neutrality point, in consistency with localized transport regime.

  20. Quantifying defects in N-layer graphene via a phenomenological model of Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Giro, Ronaldo; Archanjo, Braulio S.; Martins Ferreira, Erlon H.; Capaz, Rodrigo B.; Jorio, Ado; Achete, Carlos A.

    2014-01-01

    We construct a model to obtain the density of point defects in N-layer graphene by combining Raman spectroscopy and the TRIM (Transport Range of Ions in Matter) simulation package. The model relates the intensity (or area) ratio of graphene's D and G bands to the defect density on each layer due to Ar+ bombardment. Our method is effective for ion fluences ranging from 1011 to ∼1014 Ar+/cm-2 and it should be in principle extendable to any kind of ion and energy.