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Sample records for atomized uranium silicide

  1. Status of the atomized uranium silicide fuel development at KAERI

    SciTech Connect

    Kim, C.K.; Kim, K.H.; Park, H.D.; Kuk, I.H.

    1997-08-01

    While developing KMRR fuel fabrication technology an atomizing technique has been applied in order to eliminate the difficulties relating to the tough property of U{sub 3}Si and to take advantage of the rapid solidification effect of atomization. The comparison between the conventionally comminuted powder dispersion fuel and the atomized powder dispersion fuel has been made. As the result, the processes, uranium silicide powdering and heat treatment for U{sub 3}Si transformation, become simplified. The workability, the thermal conductivity and the thermal compatibility of fuel meat have been investigated and found to be improved due to the spherical shape of atomized powder. In this presentation the overall developments of atomized U{sub 3}Si dispersion fuel and the planned activities for applying the atomizing technique to the real fuel fabrication are described.

  2. Irradiation behaviour of uranium silicide compounds

    NASA Astrophysics Data System (ADS)

    Finlay, M. R.; Hofman, G. L.; Snelgrove, J. L.

    2004-02-01

    A study of the irradiation behaviour of uranium silicide and other related inter-metallic uranium compounds is presented. This study was motivated by the recent discovery that U 3Si 2 undergoes a crystalline to amorphous transformation during irradiation. Such information renders a previously developed fuel swelling model based on the crystalline state of U 3Si 2 invalid. This is of particular significance since low enriched U 3Si 2 dispersion fuels are widely used in research reactors. While such a finding does not alter the well established, stable and benign behaviour of U 3Si 2 during irradiation, it does indicate that a different interpretation of that behaviour is required.

  3. Postirradiation analysis of experimental uranium-silicide dispersion fuel plates

    SciTech Connect

    Hofman, G.L.; Neimark, L.A.

    1985-01-01

    Low-enriched uranium silicide dispersion fuel plates were irradiated to maximum burnups of 96% of /sup 235/U. Fuel plates containing 33 v/o U/sub 3/Si and U/sub 3/Si/sub 2/ behaved very well up to this burnup. Plates containing 33 v/o U/sub 3/Si-Al pillowed between 90 and 96% burnup of the fissile atoms. More highly loaded U/sub 3/Si-Al plates, up to 50 v/o were found to pillow at lower burnups. Plates containing 40 v/o U/sub 3/Si showed an increase swelling rate around 85% burnup. 5 refs., 10 figs.

  4. Preliminary investigations on the use of uranium silicide targets for fission Mo-99 production

    SciTech Connect

    Cols, H.; Cristini, P.; Marques, R.

    1997-08-01

    The National Atomic Energy Commission (CNEA) of Argentine Republic owns and operates an installation for production of molybdenum-99 from fission products since 1985, and, since 1991, covers the whole national demand of this nuclide, carrying out a program of weekly productions, achieving an average activity of 13 terabecquerel per week. At present they are finishing an enlargement of the production plant that will allow an increase in the volume of production to about one hundred of terabecquerel. Irradiation targets are uranium/aluminium alloy with 90% enriched uranium with aluminium cladding. In view of international trends held at present for replacing high enrichment uranium (HEU) for enrichment values lower than 20 % (LEU), since 1990 the authors are in contact with the RERTR program, beginning with tests to adapt their separation process to new irradiation target conditions. Uranium silicide (U{sub 3}Si{sub 2}) was chosen as the testing material, because it has an uranium mass per volume unit, so that it allows to reduce enrichment to a value of 20%. CNEA has the technology for manufacturing miniplates of uranium silicide for their purposes. In this way, equivalent amounts of Molybdenum-99 could be obtained with no substantial changes in target parameters and irradiation conditions established for the current process with Al/U alloy. This paper shows results achieved on the use of this new target.

  5. Progress in alkaline peroxide dissolution of low-enriched uranium metal and silicide targets

    SciTech Connect

    Chen, L.; Dong, D.; Buchholz, B.A.; Vandegrift, G.F.; Wu, D.

    1996-12-31

    This paper reports recent progress on two alkaline peroxide dissolution processes: the dissolution of low-enriched uranium metal and silicide (U{sub 3}Si{sub 2}) targets. These processes are being developed to substitute low-enriched for high-enriched uranium in targets used for production of fission-product {sup 99}Mo. Issues that are addressed include (1) dissolution kinetics of silicide targets, (2) {sup 99}Mo lost during aluminum dissolution, (3) modeling of hydrogen peroxide consumption, (4) optimization of the uranium foil dissolution process, and (5) selection of uranium foil barrier materials. Future work associated with these two processes is also briefly discussed.

  6. Development of molecular dynamics potential for uranium silicide fuels

    SciTech Connect

    Yu, Jianguo; Zhang, Yongfeng; Hales, Jason D.

    2016-09-01

    Use of uranium–silicide (U-Si) in place of uranium dioxide (UO2) is one of the promising concepts being proposed to increase the accident tolerance of nuclear fuels. This is due to a higher thermal conductivity than UO2 that results in lower centerline temperatures. U-Si also has a higher fissile density, which may enable some new cladding concepts that would otherwise require increased enrichment limits to compensate for their neutronic penalty. However, many critical material properties for U-Si have not been determined experimentally. For example, silicide compounds (U3Si2 and U3Si) are known to become amorphous under irradiation. There was clear independent experimental evidence to support a crystalline to amorphous transformation in those compounds. However, it is still not well understood how the amorphous transformation will affect on fuel behavior. It is anticipated that modeling and simulation may deliver guidance on the importance of various properties and help prioritize experimental work. In order to develop knowledge-based models for use at the engineering scale with a minimum of empirical parameters and increase the predictive capabilities of the developed model, inputs from atomistic simulations are essential. First-principles based density functional theory (DFT) calculations will provide the most reliable information. However, it is probably not possible to obtain kinetic information such as amorphization under irradiation directly from DFT simulations due to size and time limitations. Thus, a more feasible way may be to employ molecular dynamics (MD) simulation. Unfortunately, so far no MD potential is available for U-Si to discover the underlying mechanisms. Here, we will present our recent progress in developing a U-Si potential from ab initio data. This work is supported by the Nuclear Energy Advanced Modeling and Simulation (NEAMS) program funded by the U.S. Department of Energy, Office of Nuclear Energy.

  7. Thermal Analysis of a Uranium Silicide Miniplate Irradiation Experiment

    SciTech Connect

    Donna Post Guillen

    2009-09-01

    This paper outlines the thermal analysis for the irradiation of high density uranium-silicide (U3Si2 dispersed in an aluminum matrix and clad in aluminum) booster fuel for a Boosted Fast Flux Loop designed to provide fast neutron flux test capability in the ATR. The purpose of this experiment (designated as Gas Test Loop-1 [GTL-1]) is two-fold: (1) to assess the adequacy of the U3Si2/Al dispersion fuel and the aluminum alloy 6061 cladding, and (2) to verify stability of the fuel cladding boehmite pre-treatment at nominal power levels in the 430 to 615 W/cm2 (2.63 to 3.76 Btu/s•in2) range. The GTL-1 experiment relies on a difficult balance between achieving a high heat flux, yet keeping fuel centerline temperature below a specified maximum value throughout an entire operating cycle of the reactor. A detailed finite element model was constructed to calculate temperatures and heat flux levels and to reveal which experiment parameters place constraints on reactor operations. Analyses were performed to determine the bounding lobe power level at which the experiment could be safely irradiated, yet still provide meaningful data under nominal operating conditions. Then, simulations were conducted for nominal and bounding lobe power levels under steady-state and transient conditions with the experiment in the reactor. Reactivity changes due to a loss of commercial power with pump coast-down to emergency flow or a standard in-pile tube pump discharge break were evaluated. The time after shutdown for which the experiment can be adequately cooled by natural convection cooling was determined using a system thermal hydraulic model. An analysis was performed to establish the required in-reactor cooling time prior to removal of the experiment from the reactor. The inclusion of machining tolerances in the numerical model has a large effect on heat transfer.

  8. Neutron irradiated uranium silicides studied by neutron diffraction and Rietveld analysis

    SciTech Connect

    Birtcher, R.C.; Mueller, M.H.; Richardson, J.W. Jr.

    1990-11-01

    The irradiation behavior of high-density uranium silicides has been a matter of interest to the nuclear industry for use in high power or low enrichment applications. Transmission electron microscopy studies have found that heavy ion bombardment renders U{sub 3}Si and U{sub 3}Si{sub 2} amorphous at temperatures below about 250 C and that U{sub 3}Si becomes mechanically unstable suffering rapid growth by plastic flow. In this present work, crystallographic changes preceding amorphization by fission fragment damage have been studied by high-resolution neutron diffraction as a function of damage produced by uranium fission at room temperature. Initially, both silicides had tetragonal crystal structures. Crystallographic and amorphous phases were studied simultaneously by combining conventional Rietveld refinement of the crystallographic phases with Fourier-filtering analysis of the non-crystalline scattering component. 13 refs., 5 figs.

  9. The effect of fabrication variables on the irradiation performance of uranium silicide dispersion fuel plates

    SciTech Connect

    Hofman, G.L.; Neimark, L.A.; Olquin, F.L.

    1986-11-01

    The effect of fabrication variables on the irradiation behavior of uranium silicide-aluminum dispersion fuel plates is examined. The presence of minor amounts of metallic uranium-silicon was found to have no detrimental effect, so that extensive annealing to remove this phase appears unnecessary. Uniform fuel dispersant loading, low temperature during plate rolling, and cold-worked metallurgical condition of the fuel plates all result in a higher burnup threshold for breakaway swelling in highly-loaded U/sub 3/Si fueled plates.

  10. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    SciTech Connect

    Harp, Jason Michael; Lessing, Paul Alan; Hoggan, Rita Elaine

    2015-06-21

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.

  11. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    DOE PAGES

    Harp, Jason Michael; Lessing, Paul Alan; Hoggan, Rita Elaine

    2015-06-21

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinationsmore » that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.« less

  12. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    NASA Astrophysics Data System (ADS)

    Harp, Jason M.; Lessing, Paul A.; Hoggan, Rita E.

    2015-11-01

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ± 0.06 g/cm3. Additional characterization of the pellets by scanning electron microscopy and X-ray diffraction has also been performed. Pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.

  13. Thermal compatibility studies of unirradiated uranium silicide dispersed in aluminum. [Reduced Enrichment for Research and Test Reactor

    SciTech Connect

    Wiencek, T.C.; Domagala, R.F.; Thresh, H.R.

    1984-09-01

    Powder metallurgy dispersions of uranium silicides in an aluminum matrix have been developed by the international Reduced Enrichment for Research and Test Reactors program as a new generation of proliferation-resistant fuels. A major issue of concern is the compatibility of the fuel with the matrix material and the dimensional stability of this fuel type. A total of 45 miniplate-type fuel plates were annealed at 400/sup 0/C for up to 1981 hours. A data base for the thermal compatibility of unirradiated uranium silicide dispersed in aluminum was established. No modification tested of a standard fuel plate showed any significant reduction of the plate swelling. The cause of the thermal growth of silicide fuel plates was determined to be a two-step process: (1) the reaction of the uranium silicide with aluminum to form U(AlSi)/sub 3/ and (2) the release of hydrogen and subsequent creep and pillowing of the fuel plate. 9 references, 4 figures, 6 tables.

  14. Fuel loading and homogeneity analysis of HFIR design fuel plates loaded with uranium silicide fuel

    SciTech Connect

    Blumenfeld, P.E.

    1995-08-01

    Twelve nuclear reactor fuel plates were analyzed for fuel loading and fuel loading homogeneity by measuring the attenuation of a collimated X-ray beam as it passed through the plates. The plates were identical to those used by the High Flux Isotope Reactor (HFIR) but were loaded with uranium silicide rather than with HFIR`s uranium oxide fuel. Systematic deviations from nominal fuel loading were observed as higher loading near the center of the plates and underloading near the radial edges. These deviations were within those allowed by HFIR specifications. The report begins with a brief background on the thermal-hydraulic uncertainty analysis for the Advanced Neutron Source (ANS) Reactor that motivated a statistical description of fuel loading and homogeneity. The body of the report addresses the homogeneity measurement techniques employed, the numerical correction required to account for a difference in fuel types, and the statistical analysis of the resulting data. This statistical analysis pertains to local variation in fuel loading, as well as to ``hot segment`` analysis of narrow axial regions along the plate and ``hot streak`` analysis, the cumulative effect of hot segment loading variation. The data for all twelve plates were compiled and divided into 20 regions for analysis, with each region represented by a mean and a standard deviation to report percent deviation from nominal fuel loading. The central regions of the plates showed mean values of about +3% deviation, while the edge regions showed mean values of about {minus}7% deviation. The data within these regions roughly approximated random samplings from normal distributions, although the chi-square ({chi}{sup 2}) test for goodness of fit to normal distributions was not satisfied.

  15. Method for producing uranium atomic beam source

    DOEpatents

    Krikorian, Oscar H.

    1976-06-15

    A method for producing a beam of neutral uranium atoms is obtained by vaporizing uranium from a compound UM.sub.x heated to produce U vapor from an M boat or from some other suitable refractory container such as a tungsten boat, where M is a metal whose vapor pressure is negligible compared to that of uranium at the vaporization temperature. The compound, for example, may be the uranium-rhenium compound, URe.sub.2. An evaporation rate in excess of about 10 times that of conventional uranium beam sources is produced.

  16. Mechanistic interpretation of an observed rate dependence of low temperature swelling of irradiated uranium silicide dispersion fuels

    SciTech Connect

    Rest, J; Hofman, G L

    1990-06-01

    Recent experimental observations on low temperature swelling of irradiated uranium silicide dispersion fuels have indicated that the growth of fission gas bubbles appears to be affected by fission rate. The swelling curve of the material exhibits a distinct knee'' that shifts to higher fission density with increased fission rate due to higher enrichments. Current state-of-the-art models for fission gas behavior do not predict such a dependence. Indirect evidence from various experiments leads the present authors to speculate that a dense network of subgrain boundaries forms at a dose corresponding to the knee'' in the swelling curve, upon which gas bubbles nucleate and then grow at an accelerated rate compared to those in the bulk material. A theoretical formulation is presented wherein the stored energy in the material is concentrated on a network of crystallization'' sites which diminish with dose due to interaction with radiation produced defects (vacancy-impurity pairs). Recrystallization is induced by statistical fluctuations when the energy per site is high enough such that the creation of grain boundary surfaces is offset by the creation of strain free volumes with a resultant net decrease in the free energy of the material. This formulation is shown to provide a reasonable interpretation of the observed phenomena. 11 refs., 7 figs.

  17. Template-directed atomically precise self-organization of perfectly ordered parallel cerium silicide nanowire arrays on Si(110)-16 × 2 surfaces

    PubMed Central

    2013-01-01

    The perfectly ordered parallel arrays of periodic Ce silicide nanowires can self-organize with atomic precision on single-domain Si(110)-16 × 2 surfaces. The growth evolution of self-ordered parallel Ce silicide nanowire arrays is investigated over a broad range of Ce coverages on single-domain Si(110)-16 × 2 surfaces by scanning tunneling microscopy (STM). Three different types of well-ordered parallel arrays, consisting of uniformly spaced and atomically identical Ce silicide nanowires, are self-organized through the heteroepitaxial growth of Ce silicides on a long-range grating-like 16 × 2 reconstruction at the deposition of various Ce coverages. Each atomically precise Ce silicide nanowire consists of a bundle of chains and rows with different atomic structures. The atomic-resolution dual-polarity STM images reveal that the interchain coupling leads to the formation of the registry-aligned chain bundles within individual Ce silicide nanowire. The nanowire width and the interchain coupling can be adjusted systematically by varying the Ce coverage on a Si(110) surface. This natural template-directed self-organization of perfectly regular parallel nanowire arrays allows for the precise control of the feature size and positions within ±0.2 nm over a large area. Thus, it is a promising route to produce parallel nanowire arrays in a straightforward, low-cost, high-throughput process. PMID:24188092

  18. Safety evaluation report related to the evaluation of low-enriched uranium silicide-aluminum dispersion fuel for use in non-power reactors

    SciTech Connect

    Not Available

    1988-07-01

    Low-enriched uranium silicide-aluminum dispersion plate-type fuels have been extensively researched and developed under the international program, Reduced Enrichment in Research and Test Reactors. The international effort was led by Argonne National Laboratory (ANL) in the United States. This evaluation is based primarily on reports issued by ANL that discuss and summarize the developmental tests and experiments, including postirradiation examinations, of both miniature and full-sized plates of prototypical fuel compositions. This evaluation concludes that plate-type fuels suitable and acceptable for use in research and test reactors can be fabricated with U/sub 3/Si/sub 2/-Al dispersion compacts with uranium densities up to 4.8 g/cm/sup 3/. 4 refs., 1 fig.

  19. Ceramic-silicide composites

    SciTech Connect

    Petrovic, J.J.

    1998-12-01

    The area of ceramic-silicide composites represents a merging of structural ceramics and structural silicides. Such ceramic-silicide composites can possess the desirable characteristics of both classes of compounds. Important structural ceramics are materials such as Si{sub 3}N{sub 4}, SiC, Al{sub 2}O{sub 3}, and ZrO{sub 2}, which possess covalent, ionic, or mixed covalent-ionic atomic bonding. An important structural silicide is MoSi{sub 2}, which possesses mixed covalent-metallic bonding. The arena of ceramic-silicide composites encompasses both composites where the structural silicide is the matrix and the structural ceramic is the reinforcement, and composites where the structural ceramic is the matrix and the structural silicide is the reinforcement. In the former area, MoSi{sub 2}-SiC, MoSi{sub 2}-ZrO{sub 2}, and MoSi{sub 2}-Al{sub 2}O{sub 3} composites are discussed. In the latter area, Si{sub 3}N{sub 4}-MoSi{sub 2} composites are described.

  20. A model for fission-gas-bubble behavior in amorphous uranium silicide compounds

    NASA Astrophysics Data System (ADS)

    Rest, J.

    2004-02-01

    A model for the behavior of fission gas in irradiated amorphous materials is developed. The model proposes that gas bubble nucleation occurs within shear bands initiated around free volume regions. Small gas-atom clusters that form within these regions are susceptible to dissolution by forces generated by the plastic flow of material around the cluster. The bubble coarsening process depends on the materials viscosity and on irradiation-induced re-solution. The bubble distribution eventually reaches a point where larger bubbles from the tail of the evolving lognormal size distribution begin to contact the more numerous nanometer-sized bubbles from the peak region. This condition defines the knee in the swelling curve. The fission density at which the knee occurs is a function of fission rate. Calculations for the behavior of the knee, swelling, and the fraction of gas in bubbles in irradiated U 3Si 2 intermetallic compounds are compared to measured quantities.

  1. An atomic model for neutral and singly ionized uranium

    NASA Technical Reports Server (NTRS)

    Maceda, E. L.; Miley, G. H.

    1979-01-01

    A model for the atomic levels above ground state in neutral, U(0), and singly ionized, U(+), uranium is described based on identified atomic transitions. Some 168 states in U(0) and 95 in U(+) are found. A total of 1581 atomic transitions are used to complete this process. Also discussed are the atomic inverse lifetimes and line widths for the radiative transitions as well as the electron collisional cross sections.

  2. An atomic model for neutral and singly ionized uranium

    NASA Technical Reports Server (NTRS)

    Maceda, E. L.; Miley, G. H.

    1979-01-01

    A model for the atomic levels above ground state in neutral, U(0), and singly ionized, U(+), uranium is described based on identified atomic transitions. Some 168 states in U(0) and 95 in U(+) are found. A total of 1581 atomic transitions are used to complete this process. Also discussed are the atomic inverse lifetimes and line widths for the radiative transitions as well as the electron collisional cross sections.

  3. Quantum oscillations of nitrogen atoms in uranium nitride.

    PubMed

    Aczel, A A; Granroth, G E; Macdougall, G J; Buyers, W J L; Abernathy, D L; Samolyuk, G D; Stocks, G M; Nagler, S E

    2012-01-01

    The vibrational excitations of crystalline solids corresponding to acoustic or optic one-phonon modes appear as sharp features in measurements such as neutron spectroscopy. In contrast, many-phonon excitations generally produce a complicated, weak and featureless response. Here we present time-of-flight neutron scattering measurements for the binary solid uranium nitride, showing well-defined, equally spaced, high-energy vibrational modes in addition to the usual phonons. The spectrum is that of a single atom, isotropic quantum harmonic oscillator and characterizes independent motions of light nitrogen atoms, each found in an octahedral cage of heavy uranium atoms. This is an unexpected and beautiful experimental realization of one of the fundamental, exactly solvable problems in quantum mechanics. There are also practical implications, as the oscillator modes must be accounted for in the design of generation IV nuclear reactors that plan to use uranium nitride as a fuel.

  4. Interaction transfer of silicon atoms forming Co silicide for Co/√(3)×√(3)R30°-Ag/Si(111) and related magnetic properties

    SciTech Connect

    Chang, Cheng-Hsun-Tony; Fu, Tsu-Yi; Tsay, Jyh-Shen

    2015-05-07

    Combined scanning tunneling microscopy, Auger electron spectroscopy, and surface magneto-optic Kerr effect studies were employed to study the microscopic structures and magnetic properties for ultrathin Co/√(3)×√(3)R30°-Ag/Si(111). As the annealing temperature increases, the upward diffusion of Si atoms and formation of Co silicides occurs at temperature above 400 K. Below 600 K, the √(3)×√(3)R30°-Ag/Si(111) surface structure persists. We propose an interaction transferring mechanism of Si atoms across the √(3)×√(3)R30°-Ag layer. The upward transferred Si atoms react with Co atoms to form Co silicide. The step height across the edge of the island, a separation of 0.75 nm from the analysis of the 2 × 2 structure, and the calculations of the normalized Auger signal serve as strong evidences for the formation of CoSi{sub 2} at the interface. The interaction transferring mechanism for Si atoms enhances the possibility of interactions between Co and Si atoms. The smoothness of the surface is advantage for that the easy axis of magnetization for Co/√(3)×√(3)R30°-Ag/Si(111) is in the surface plane. This provides a possible way of growing flat magnetic layers on silicon substrate with controllable silicide formation and shows potential applications in spintronics devices.

  5. Quantum oscillations of nitrogen atoms in uranium nitride

    SciTech Connect

    Aczel, Adam A; Granroth, Garrett E; MacDougall, Gregory J; Buyers, W. J. L.; Abernathy, Douglas L; Samolyuk, German D; Stocks, George Malcolm; Nagler, Stephen E

    2012-01-01

    The vibrational excitations of crystalline solids corresponding to acoustic or optic one phonon modes appear as sharp features in measurements such as neutron spectroscopy. In contrast, many-phonon excitations generally produce a complicated, weak, and featureless response. Here we present time-of-flight neutron scattering measurements for the binary solid uranium nitride (UN), showing well-defined, equally-spaced, high energy vibrational modes in addition to the usual phonons. The spectrum is that of a single atom, isotropic quantum harmonic oscillator and characterizes independent motions of light nitrogen atoms, each found in an octahedral cage of heavy uranium atoms. This is an unexpected and beautiful experimental realization of one of the fundamental, exactly-solvable problems in quantum mechanics. There are also practical implications, as the oscillator modes must be accounted for in the design of generation IV nuclear reactors that plan to use UN as a fuel.

  6. Atomic absorption determination of titanium and vanadium in uranium concentrates

    SciTech Connect

    Batistoni, D.A.; Smichowski, P.N.

    1985-03-01

    An atomic absorption procedure was developed for the determination of titanium and vanadium in medium-purity uranium products (yellow-cakes). Samples equivalent to 4 g uranium were dissolved in 5.5 M nitric acid. Titanium and vanadium were separated from the uranium matrix by column extraction chromatography with the use of tri-n-butyl phosphate (TBP) supported on polytrifluorochloretylene (Kel-F) power. A nitrous oxide-acetylene flame was employed to estimate the concentration of the analytes in the nitric phase. The precision was about 3% relative standard deviation for both elements, with detection limits of 60 ..mu..g/g for Ti and 30 ..mu..g/g for V. The influence of Al, Fe, and PO/sup 3 -//sub 4/ on the measured absorbance values and mutual interferences effects between Ti and V were investigated.

  7. Characteristics of a nickel thin film and formation of nickel silicide by using remote plasma atomic layer deposition with Ni( i Pr-DAD)2

    NASA Astrophysics Data System (ADS)

    Kim, Jinho; Jang, Woochool; Park, Jingyu; Jeon, Heeyoung; Kim, Hyunjung; Yuh, Junhan; Jeon, Hyeongtag

    2015-03-01

    In this study, the characteristics of nickel thin film deposited by remote plasma atomic layer deposition (RPALD) on p-type Si substrate and formation of nickel silicide using rapid thermal annealing were determined. Bis(1,4-di-isopropyl-1,3-diazabutadienyl)nickel, Ni(iPr-DAD)2, was used as a Ni precursor and ammonia plasma was used as a reactant. This was the first attempt to deposit Ni thin film using Ni(iPr-DAD)2 as a precursor for the ALD process. The RPALD Ni film was deposited with a growth rate of around 2.2{\\AA}/cycle at 250 {\\deg}C and showed significant low resistivity of 33 {\\mu}{\\Omega}cm with a total impurity concentration of around 10 at. %.The impurities of the thin film, carbon and nitrogen, were existent by the forms of C-C and C-N in a bonding state. The impurities removal tendency was investigated by comparing of experimental conditions, namely process temperature and pressure. Nitrogen impurity was removed by thermal desorption during each ALD cycle and carbon impurity was reduced by the optimizing of the process pressure which is directly related with a mean free path of NH3 plasma. After Ni deposition, nickel silicide was formed by RTA in a vacuum ambient for 1 minute. A nickel silicide layer from ALD Ni and PVD Ni was compared at the annealing temperature from 500 to 900 {\\deg}C. NiSi from ALD Ni showed better thermal stability due to the contribution of small amounts of carbon and nitrogen in the asdeposited Ni thin film. Degradation of the silicide layer was effectively suppressed with a use of ALD Ni.

  8. Uranium isotopes quantitatively determined by modified method of atomic absorption spectrophotometry

    NASA Technical Reports Server (NTRS)

    Lee, G. H.

    1967-01-01

    Hollow-cathode discharge tubes determine the quantities of uranium isotopes in a sample by using atomic absorption spectrophotometry. Dissociation of the uranium atoms allows a large number of ground state atoms to be produced, absorbing the incident radiation that is different for the two major isotopes.

  9. Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition

    SciTech Connect

    Lee, Inhye; Park, Jingyu; Jeon, Heeyoung; Kim, Hyunjung; Shin, Changhee; Shin, Seokyoon; Lee, Kunyoung; Jeon, Hyeongtag

    2016-05-15

    In this study, the effects of a thin Ru interlayer on the thermal and morphological stability of NiSi have been investigated. Ru and Ni thin films were deposited sequentially to form a Ni/Ru/Si bilayered structure, without breaking the vacuum, by remote plasma atomic layer deposition (RPALD) on a p-type Si wafer. After annealing at various temperatures, the thermal stabilities of the Ni/Ru/Si and Ni/Si structures were investigated by various analysis techniques. The results showed that the sheet resistance of the Ni/Ru/Si sample was consistently lower compared to the Ni/Si sample over the entire temperature range. Although both samples exhibited the formation of NiSi{sub 2} phases at an annealing temperature of 800 °C, as seen with glancing angle x-ray diffraction, the peaks of the Ni/Ru/Si sample were observed to have much weaker intensities than those obtained for the Ni/Si sample. Moreover, the NiSi film with a Ru interlayer exhibited a better interface and improved surface morphologies compared to the NiSi film without a Ru interlayer. These results show that the phase transformation of NiSi to NiSi{sub 2} was retarded and that the smooth NiSi/Si interface was retained due to the activation energy increment for NiSi{sub 2} nucleation that is caused by adding a Ru interlayer. Hence, it can be said that the Ru interlayer deposited by RPALD can be used to control the phase transformation and physical properties of nickel silicide phases.

  10. Bibliography on silicides. Special report

    SciTech Connect

    Gilp, B.F.; Desai, P.D.; Ho, C.Y.

    1993-07-01

    This report is an annotated bibliography of over 750 documents on silicides. Documents published from 1952 to early 1993 are covered. Bibliographic information is organized in alphabetical order by silicide type, i.e. chromium silicides, cobalt silicides, etc. Within each chapter information is reported for specific silicides. A miscellaneous section contains silicides which are neither specifically identified nor warrant a separate section. Chapters are also included for commercially designated silicides and for those silicides which are neither properly identified nor have enough data to warrant a separate chapter. Each section is complete and selfcontained for efficient use. Bibliography, Silicides, Coatings, Molybdenum silicides, Tantalum silicides, Titanium silicides, Tungsten silicides, Vanadium silicides, Chromium silicides, Zirconium silicides, Iron silicides, Niobium silicides.

  11. Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters

    SciTech Connect

    Okada, Naoya; Uchida, Noriyuki; Kanayama, Toshihiko

    2015-03-07

    We investigated the electrical properties and derived the energy band structures of amorphous Si-rich W silicide (a-WSi{sub n}) films and approximately 1-nm-thick crystalline WSi{sub n} epitaxial films (e-WSi{sub n}) on Si (100) substrates with composition n = 8–10, both composed of Si{sub n} clusters each of which encapsulates a W atom (WSi{sub n} clusters). The effect of annealing in the temperature range of 300–500 °C was also investigated. The Hall measurements at room temperature revealed that a-WSi{sub n} is a nearly intrinsic semiconductor, whereas e-WSi{sub n} is an n-type semiconductor with electron mobility of ∼8 cm{sup 2}/V s and high sheet electron density of ∼7 × 10{sup 12 }cm{sup −2}. According to the temperature dependence of the electrical properties, a-WSi{sub n} has a mobility gap of ∼0.1 eV and mid gap states in the region of 10{sup 19 }cm{sup −3} eV{sup −1} in an optical gap of ∼0.6 eV with considerable band tail states; e-WSi{sub n} has a donor level of ∼0.1 eV with sheet density in the region of 10{sup 12 }cm{sup −2} in a band gap of ∼0.3 eV. These semiconducting band structures are primarily attributed to the open band-gap properties of the constituting WSi{sub n} cluster. In a-WSi{sub n}, the random network of the clusters generates the band tail states, and the formation of Si dangling bonds results in the generation of mid gap states; in e-WSi{sub n}, the original cluster structure is highly distorted to accommodate the Si lattice, resulting in the formation of intrinsic defects responsible for the donor level.

  12. 76 FR 58049 - Atomic Safety and Licensing Board; Honeywell International, Inc.; Metropolis Works Uranium...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-19

    ... COMMISSION Atomic Safety and Licensing Board; Honeywell International, Inc.; Metropolis Works Uranium... assurance for its Metropolis Works uranium conversion facility in Metropolis, Illinois. \\1\\ LBP-11-19, 74... Financial Assurance Requirements, Honeywell Metropolis Works, Material License No. SUB- 526 (TAC No. L32718...

  13. Inductively coupled plasma-atomic emission spectroscopy: The determination of trace impurities in uranium hexafluoride

    NASA Astrophysics Data System (ADS)

    Floyd, M. A.; Morrow, R. W.; Farrar, R. B.

    An analytical method has been developed for the determination of trace impurities in high-purity uranium hexafluoride using liquid-liquid extraction of the uranium from the trace impurities followed by analysis with inductively coupled plasma-atomic emission spectroscopy. Detection limits, accuracy, and precision data are presented.

  14. Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation

    SciTech Connect

    Liu, Hailong; She, Guangwei; Mu, Lixuan; Shi, Wensheng

    2012-12-15

    Graphical abstract: Display Omitted Highlight: ► Nickel silicides nanowire arrays prepared by a simple in situ silicidation method. ► Phases of nickel silicides could be varied by tuning the reaction temperature. ► A growth model was proposed for the nickel silicides nanowires. ► Diffusion rates of Ni and Si play a critical role for the phase variation. -- Abstract: In this paper, we report an in situ silicidizing method to prepare nickel silicide nanowire arrays with varied structures and phases. The in situ reaction (silicidation) between Si and NiCl{sub 2} led to conversion of Si nanowires to nickel silicide nanowires. Structures and phases of the obtained nickel silicides could be varied by changing the reaction temperature. At a relatively lower temperature of 700 °C, the products are Si/NiSi core/shell nanowires or NiSi nanowires, depending on the concentration of NiCl{sub 2} solution. At a higher temperature (800 °C and 900 °C), other phases of the nickel silicides, including Ni{sub 2}Si, Ni{sub 31}Si{sub 12}, and NiSi{sub 2}, were obtained. It is proposed that the different diffusion rates of Ni and Si atoms at different temperatures played a critical role in the formation of nickel silicide nanowires with different phases.

  15. Energy dependence of the trapping of uranium atoms by aluminum oxide surfaces

    NASA Technical Reports Server (NTRS)

    Librecht, K. G.

    1979-01-01

    The energy dependence of the trapping probability for sputtered U-235 atoms striking an oxidized aluminum collector surface at energies between 1 eV and 184 eV was measured. At the lowest energies, approximately 10% of the uranium atoms are not trapped, while above 10 eV essentially all of them stick. Trapping probabilities averaged over the sputtered energy distribution for uranium incident on gold and mica are also presented.

  16. Study of uranium matrix interference on ten analytes using inductively coupled plasma atomic emission spectrometry

    NASA Astrophysics Data System (ADS)

    Ghazi, A. A.; Qamar, Sajid; Atta, M. A.

    1993-08-01

    Maximum allowable concentrations of 12 elements in uranium hexafluoride feed for enrichment to reactor grade material (about 3%), vary from 1 to 100 ppm ( μg/g). Using an inductively coupled plasma atomic emission spectrometer, 51 lines of ten of these elements (B, Cr, Mo, P, Sb, Si, Ta, Ti, V and W) have been studied with a uranium matrix to investigate the matrix interference on the basis of signal to background (SBR), and background to background ratios (BBR). Detection limits and limits of quantitative determination (LQDs) were calculated for these elements in a uranium matrix using SBR and relative standard deviation of the background signal (RSD B) approach. In almost all cases, the uranium matrix interference reduces the SBRs to the extent that direct trace analysis is impossible. A uranium sample having known concentrations of impurities (around LQDs) was directly analysed with results that showed reasonable accuracy and precision.

  17. Silicidation of Ni(Yb) Film on Si(001)

    NASA Astrophysics Data System (ADS)

    Luo, Jia; Jiang, Yu-Long; Ru, Guo-Ping; Li, Bing-Zong; Chu, Paul K.

    2008-03-01

    The influence of the addition of Yb to Ni on the silicidation of Ni was investigated. The Ni(Yb) film was deposited on a Si(001) substrate by co-sputtering, and silicidation was performed by rapid thermal annealing (RTA). After silicidation, the sheet resistance of the silicide film was measured by the four-point probe method. X-ray diffraction and micro-Raman spectroscopy were employed to identify the silicide phases, and the redistribution of Yb after RTA was characterized by Rutherford backscattering spectrometry and Auger electron spectroscopy. The influence of the Yb addition on the Schottky barrier height (SBH) of the silicide/Si diode was examined by current voltage measurements. The experimental results reveal that the addition of Yb can suppress the formation of the high-resistivity Ni2Si phase, but the formation of low-resistivity NiSi phase is not affected. Furthermore, after silicidation, most of the Yb atoms accumulate in the surface layer and only a small number of Yb atoms pile up at the silicide/Si(001) interface. It is believed that the accumulation of a small amount of Yb at the silicide/Si(001) interface results in the SBH reduction observed in the Ni(Yb)Si/Si diode.

  18. Si-rich W silicide films composed of W-atom-encapsulated Si clusters deposited using gas-phase reactions of WF6 with SiH4.

    PubMed

    Okada, Naoya; Uchida, Noriyuki; Kanayama, Toshihiko

    2016-02-28

    We formed Si-rich W silicide films composed of Sin clusters, each of which encapsulates a W atom (WSi(n) clusters with 8 < n ≤ ∼ 12), by using a gas-phase reaction between WF6 and SiH4 in a hot-wall reactor. The hydrogenated WSi(n)H(x) clusters with reduced F concentration were synthesized in a heated gas phase and subsequently deposited on a substrate heated to 350-420 °C, where they dehydrogenated and coalesced into the film. Under a gas pressure of SiH4 high enough for the WSi(n)H(x) reactant to collide a sufficient number of times with SiH4 molecules before reaching the substrate, the resulting film was composed of WSi(n) clusters with a uniform n, which was determined by the gas temperature. The formed films were amorphous semiconductors with an optical gap of ∼0.8-1.5 eV and an electrical mobility gap of ∼0.05-0.12 eV, both of which increased as n increased from 8 to 12. We attribute this dependence to the reduction of randomness in the Si network as n increased, which decreased the densities of band tail states and localized states.

  19. The (2×2) reconstructions on the surface of cobalt silicides: Atomic configuration at the annealed Co/Si(111) interface

    NASA Astrophysics Data System (ADS)

    Kotlyar, V. G.; Alekseev, A. A.; Olyanich, D. A.; Utas, T. V.; Zotov, A. V.; Saranin, A. A.

    2017-08-01

    We have used scanning tunneling microscopy (STM) and ab initio total-energy calculations to characterize surface and interfacial structure of Co-Si(111) system. It has been found experimentally that two different types of the (2×2) surface structures occur. The coexistence of two phases is demonstrated by the example of STM image of the surface formed at the early stages of cobalt silicide formation under moderate annealing temperatures (500 °C). The measured height difference between the adjacent (2×2) reconstructed patches equal to about 1.0 Å (as determined from the filled-state STM images). In addition, the shift of the atomic rows by half of the row spacing is observed. Two adatom models of the (2×2) surface structures are developed. According to our data, these structures are assigned to CaF2-type CoSi2 and CsCl-type CoSi with a (2×2) array of Si adatoms on their surfaces. If the latter is the case, it has a coherent double interface CoSi/CoSi2/Si(111) with a two-layer CoSi2. Both of these interfaces are characterized by the eightfold cobalt coordination and incorporate a grown-in stacking fault.

  20. Effect of Elastic Strain Fluctuation on Atomic Layer Growth of Epitaxial Silicide in Si Nanowires by Point Contact Reactions.

    PubMed

    Chou, Yi-Chia; Tang, Wei; Chiou, Chien-Jyun; Chen, Kai; Minor, Andrew M; Tu, K N

    2015-06-10

    Effects of strain impact a range of applications involving mobility change in field-effect-transistors. We report the effect of strain fluctuation on epitaxial growth of NiSi2 in a Si nanowire via point contact and atomic layer reactions, and we discuss the thermodynamic, kinetic, and mechanical implications. The generation and relaxation of strain shown by in situ TEM is periodic and in synchronization with the atomic layer reaction. The Si lattice at the epitaxial interface is under tensile strain, which enables a high solubility of supersaturated interstitial Ni atoms for homogeneous nucleation of an epitaxial atomic layer of the disilicide phase. The tensile strain is reduced locally during the incubation period of nucleation by the dissolution of supersaturated Ni atoms in the Si lattice but the strained-Si state returns once the atomic layer epitaxial growth of NiSi2 occurs by consuming the supersaturated Ni.

  1. The growth and applications of silicides for nanoscale devices

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Chen; Chen, Yu; Huang, Yu

    2012-02-01

    Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at the nanoscale have indicated possible deviations from the bulk and the thin film system. Here we present a review of fabrication, growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction.Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at the nanoscale have indicated possible deviations from the bulk and the thin film system. Here we present a review of fabrication, growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. This article was submitted as part of a collection highlighting papers on the `Recent Advances in Semiconductor Nanowires Research' from ICMAT 2011.

  2. Measurement of lanthanum and technetium in uranium fuels by inductively coupled plasma atomic emission spectroscopy.

    SciTech Connect

    Carney, K.; Crane, P.; Cummings, D.; Krsul, J.; McKnight, R.

    1999-06-10

    An important parameter in characterizing an irradiated nuclear fuel is determining the amount of uranium fissioned. By determining the amount of uranium fissioned in the fuel a burnup performance parameter can be calculated, and the amount of fission products left in the fuel can be predicted. The quantity of uranium fissioned can be calculated from the amount of lanthanum and technetium present in the fuel. Lanthanum and technetium were measured in irradiated fuel samples using an Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES) instrument and separation equipment located in a shielded glove-box. A discussion of the method, interferences, detection limits, quality control and a comparison to other work will be presented.

  3. Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour

    PubMed Central

    Martin, T. L.; Coe, C.; Bagot, P. A. J.; Morrall, P.; Smith, G. D. W; Scott, T.; Moody, M. P.

    2016-01-01

    Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour. PMID:27403638

  4. Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour

    NASA Astrophysics Data System (ADS)

    Martin, T. L.; Coe, C.; Bagot, P. A. J.; Morrall, P.; Smith, G. D. W.; Scott, T.; Moody, M. P.

    2016-07-01

    Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour.

  5. Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour.

    PubMed

    Martin, T L; Coe, C; Bagot, P A J; Morrall, P; Smith, G D W; Scott, T; Moody, M P

    2016-07-12

    Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour.

  6. Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires

    NASA Astrophysics Data System (ADS)

    Hsu, Hsun-Feng; Chen, Chun-An; Liu, Shang-Wu; Tang, Chun-Kai

    2017-03-01

    Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-silicide region were attributed high- and low-resistance parts of nanowire, respectively, causing the resistance of the Ni-silicide nanocrystal-modified Si nanowire and the Ni-silicide/Si heterostructure multi-stacked nanowire to be a little higher and much lower than that of Si nanowire. An O2 sensing device was formed from a nanowire that was mounted on Pt electrodes. When the nanowires exposed to O2, the increase in current in the Ni-silicide/Si heterostructure multi-stacked nanowire was much larger than that in the other nanowires. The Ni-silicide nanocrystal-modified Si nanowire device had the highest sensitivity. The phenomenon can be explained by the formation of a Schottky junction at the Ni-silicide/Si interface in these two types of Ni-Silicide/Si nanowire and the formation of a hole channel at the silicon nanowire/native oxide interface after exposing the nanowires to O2.

  7. Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires.

    PubMed

    Hsu, Hsun-Feng; Chen, Chun-An; Liu, Shang-Wu; Tang, Chun-Kai

    2017-12-01

    Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-silicide region were attributed high- and low-resistance parts of nanowire, respectively, causing the resistance of the Ni-silicide nanocrystal-modified Si nanowire and the Ni-silicide/Si heterostructure multi-stacked nanowire to be a little higher and much lower than that of Si nanowire. An O2 sensing device was formed from a nanowire that was mounted on Pt electrodes. When the nanowires exposed to O2, the increase in current in the Ni-silicide/Si heterostructure multi-stacked nanowire was much larger than that in the other nanowires. The Ni-silicide nanocrystal-modified Si nanowire device had the highest sensitivity. The phenomenon can be explained by the formation of a Schottky junction at the Ni-silicide/Si interface in these two types of Ni-Silicide/Si nanowire and the formation of a hole channel at the silicon nanowire/native oxide interface after exposing the nanowires to O2.

  8. Uranium*

    NASA Astrophysics Data System (ADS)

    Grenthe, Ingmar; Drożdżyński, Janusz; Fujino, Takeo; Buck, Edgar C.; Albrecht-Schmitt, Thomas E.; Wolf, Stephen F.

    Uranium compounds have been used as colorants since Roman times (Caley, 1948). Uranium was discovered as a chemical element in a pitchblende specimen by Martin Heinrich Klaproth, who published the results of his work in 1789. Pitchblende is an impure uranium oxide, consisting partly of the most reduced oxide uraninite (UO2) and partly of U3O8. Earlier mineralogists had considered this mineral to be a complex oxide of iron and tungsten or of iron and zinc, but Klaproth showed by dissolving it partially in strong acid that the solutions yielded precipitates that were different from those of known elements. Therefore he concluded that it contained a new element (Mellor, 1932); he named it after the planet Uranus, which had been discovered in 1781 by William Herschel, who named it after the ancient Greek deity of the Heavens.

  9. Reduction of uranium hexafluoride to tetrafluoride by using the hydrogen atoms

    NASA Astrophysics Data System (ADS)

    Aleksandrov, B. P.; Gordon, E. B.; Ivanov, A. V.; Kotov, A. A.; Smirnov, V. E.

    2016-09-01

    We consider the reduction of UF6 to UF4 by chemical reaction with hydrogen atoms originated in the powerful chemical generator. The principal design of such a chemical convertor is described. The results of the mathematical modeling of the thermodynamics and kinetics of the UF6 to UF4 reduction process are analyzed. The few options for the hydrogen atom generator design are proposed. A layout of the experimental setup with the chemical reactor is presented. The high efficiency together with the ability of the process scaling without loss of its efficiency makes this approach to the uranium hexafluoride depletion into tetrafluoride promising for its application in the industry.

  10. Summary history of domestic uranium procurement under US Atomic Energy Commission contracts. Final report

    SciTech Connect

    Albrethsen, H. Jr.; McGinley, F.E.

    1982-09-01

    During the period 1947 through 1970, the Atomic Energy Commission (AEC) fostered the rapid development and expansion of the domestic uranium mining and milling industry by providing a market for uranium. Some thirty-two mills were constructed during that period to produce U/sub 3/O/sub 8/ concentrates for sale to the AEC. In addition, there were various pilot plants, concentrators, upgraders, heap leach, and solution mining facilities that operated during the period. The purpose of this report is to compile a short narrative history of the AEC's uranium concentrate procurement program and to describe briefly each of the operations that produced uranium for sale to the AEC. Contractual arrangements are described and data are given on quantities of U/sub 3/O/sub 8/ purchased and prices paid. Similar data are included for V/sub 2/O/sub 5/, where applicable. Mill and other plant operating data were also compiled from old AEC records. These latter data were provided by the companies, as a contractual requirement, during the period of operation under AEC contracts. Additionally, an effort was made to determine the present status of each facility by reference to other recently published reports. No sites were visited nor were the individual reports reviewed by the companies, many of which no longer exist. The authors relied almost entirely on published information for descriptions of facilities and milling processes utilized.

  11. Uranium recovery from seawater: development of fiber adsorbents prepared via atom-transfer radical polymerization

    SciTech Connect

    Saito, Tomonori; Brown, Suree; Chatterjee, Sabornie; Kim, Jungseung; Tsouris, Costas; Mayes, Richard T.; Kuo, Li-Jung; Gill, Gary; Oyola, Yatsandra; Janke, Christopher J.; Dai, Sheng

    2014-08-04

    We developed a novel adsorbent preparation method using atom-transfer radical polymerization (ATRP) combined with radiation-induced graft polymerization (RIGP) in order to synthesize an adsorbent for uranium recovery from seawater. Furthermore, the ATRP method allowed a much higher degree of grafting on the adsorbent fibers (595 2818%) than that allowed by RIGP alone. The adsorbents were prepared with varied composition of amidoxime groups and hydrophilic acrylate groups. The successful preparation revealed that both ligand density and hydrophilicity were critical for optimal performance of the adsorbents. Adsorbents synthesized in this study showed a relatively high performance (141 179 mg/g at 49 62 % adsorption) in laboratory screening tests using a uranium concentration of ~6 ppm. This performance is much higher than that of known commercial adsorbents. However, actual seawater experiment showed impeded performance compared to the recently reported high-surface-area-fiber adsorbents, due to slow adsorption kinetics. The impeded performance motivated an investigation of the effect of hydrophilic block addition on the graft chain terminus. The addition of hydrophilic block on the graft chain terminus nearly doubled the uranium adsorption capacity in seawater, from 1.56 mg/g to 3.02 mg/g. Our investigation revealed the importance of polymer chain conformation, in addition to ligand and hydrophilic group ratio, for advanced adsorbent synthesis for uranium recovery from seawater.

  12. Atomic and molecular collision aspects of thermospheric uranium-vapor releases. Technical report, 15 February 1980-31 December 1985

    SciTech Connect

    Hamlin, D.A.

    1990-05-01

    The DNA Uranium (Oxides) LWIR Review Committee considered the effectiveness of field measurements of the LWIR from uranium oxides produced by (hypothetical) controlled releases of uranium vapor from rockets in the thermosphere. Collated here is the writer's work supporting the committee on atomic and molecular collision aspects of such releases. Included is an essential auxiliary study to (a) understand, in terms of atomic and molecular parameters, coefficients for Ba+ diffusion along the magnetic field as measured and predicted for Ba-release events and (b) apply that (limited) understanding to U-release studies. For particles colliding with neutral atmospheric species, several interaction potentials are used to compute velocity-dependent momentum-transfer cross sections, stopping power and range versus energy, and diffusion coefficients. The momentum-transfer cross sections are also compared with cross sections for certain uranium oxide reactions specially atom-transfer reactions.

  13. Dopant diffusion in tungsten silicide

    SciTech Connect

    Pan, P.; Hsieh, N.; Geipel, H.J. Jr.; Slusser, G.J.

    1982-04-01

    The dopant (B, P, and As) redistribution in a silicide on polycrystalline silicon structure after annealing at 800 and 1000 /sup 0/C was studied. The distribution of boron was found to be quite different from these of phosphorus and arsenic. At 1000 /sup 0/C, the distribution coefficient for boron at the WSi/sub 2//polycrystalline silicon interface was found to be 2.7. The solubilities of phosphorus and arsenic in WSi/sub 2/ at 1000 /sup 0/C were estimated to be 6 x 10/sup 19/ and 1.6 x 10/sup 19/ atoms/cm/sup 3/, respectively. At 800 /sup 0/C, the diffusion coefficient for the dopants was found to be equal to, or greater than 3.3 x 10/sup -12/ cm/sup 2//s, which is at least three orders of magnitude larger than in silicon.

  14. Uranium contents and (235)U/(238)U atom ratios in soil and earthworms in western Kosovo after the 1999 war.

    PubMed

    Di Lella, L A; Nannoni, F; Protano, G; Riccobono, F

    2005-01-20

    The uranium content and (235)U/(238)U atom ratio were determined in soils and earthworms of an area of Kosovo (Djakovica garrison), heavily shelled with depleted uranium (DU) ammunition during the 1999 war. The aim of the study was to reconstruct the small-scale distribution of uranium and assess the influence of the DU added to the surface environment. The total uranium concentration and the (235)U/(238)U ratio of topsoils showed great variability and were inversely correlated. The highest uranium levels (up to 31.47 mg kg(-1)) and lowest (235)U/(238)U ratios (minimum 0.002147) were measured in topsoils collected inside, or very close to, the clusters of DU penetrator holes. Regarding the fractionation of uranium in the surface soils, the uranium concentrations in the soluble and exchangeable fractions increased as the total uranium concentration of the topsoils increased. High and rather uniform percentage contents of uranium (24-36%) were associated with the poorly crystalline iron oxide phases of soils. In the U-enriched soils the elevated levels of the element were probably due to the presence of very small, unevenly distributed oxidized DU particles. The total uranium concentration in earthworms was in the range 0.142-0.656 mg kg(-1), with the highest concentrations in Lumbricus terrestris. The juveniles of all three studied species seemed to accumulate uranium more than adults, probably due to age-related differences in metabolism. The (235)U/(238)U ratio in the earthworms was variable (0.005241-0.007266) and independent of both the total uranium contents in soils and the absolute uranium levels in the animals. Bioconcentration was greater at lower U concentrations in soil, probably due to an increasing rate of elimination of uranium by the earthworms as the soil contents of the element increase. The results of this study clearly indicate that DU was added to the soil of the study area. Nevertheless, the phenomenon was very limited spatially and the total

  15. Process for producing enriched uranium having a .sup.235 U content of at least 4 wt. % via combination of a gaseous diffusion process and an atomic vapor laser isotope separation process to eliminate uranium hexafluoride tails storage

    DOEpatents

    Horton, James A.; Hayden, Jr., Howard W.

    1995-01-01

    An uranium enrichment process capable of producing an enriched uranium, having a .sup.235 U content greater than about 4 wt. %, is disclosed which will consume less energy and produce metallic uranium tails having a lower .sup.235 U content than the tails normally produced in a gaseous diffusion separation process and, therefore, eliminate UF.sub.6 tails storage and sharply reduce fluorine use. The uranium enrichment process comprises feeding metallic uranium into an atomic vapor laser isotope separation process to produce an enriched metallic uranium isotopic mixture having a .sup.235 U content of at least about 2 wt. % and a metallic uranium residue containing from about 0.1 wt. % to about 0.2 wt. % .sup.235 U; fluorinating this enriched metallic uranium isotopic mixture to form UF.sub.6 ; processing the resultant isotopic mixture of UF.sub.6 in a gaseous diffusion process to produce a final enriched uranium product having a .sup.235 U content of at least 4 wt. %, and up to 93.5 wt. % or higher, of the total uranium content of the product, and a low .sup.235 U content UF.sub.6 having a .sup.235 U content of about 0.71 wt. % of the total uranium content of the low .sup.235 U content UF.sub.6 ; and converting this low .sup.235 U content UF.sub.6 to metallic uranium for recycle to the atomic vapor laser isotope separation process.

  16. Process for producing enriched uranium having a {sup 235}U content of at least 4 wt. % via combination of a gaseous diffusion process and an atomic vapor laser isotope separation process to eliminate uranium hexafluoride tails storage

    DOEpatents

    Horton, J.A.; Hayden, H.W. Jr.

    1995-05-30

    An uranium enrichment process capable of producing an enriched uranium, having a {sup 235}U content greater than about 4 wt. %, is disclosed which will consume less energy and produce metallic uranium tails having a lower {sup 235}U content than the tails normally produced in a gaseous diffusion separation process and, therefore, eliminate UF{sub 6} tails storage and sharply reduce fluorine use. The uranium enrichment process comprises feeding metallic uranium into an atomic vapor laser isotope separation process to produce an enriched metallic uranium isotopic mixture having a {sup 235} U content of at least about 2 wt. % and a metallic uranium residue containing from about 0.1 wt. % to about 0.2 wt. % {sup 235} U; fluorinating this enriched metallic uranium isotopic mixture to form UF{sub 6}; processing the resultant isotopic mixture of UF{sub 6} in a gaseous diffusion process to produce a final enriched uranium product having a {sup 235}U content of at least 4 wt. %, and up to 93.5 wt. % or higher, of the total uranium content of the product, and a low {sup 235}U content UF{sub 6} having a {sup 235}U content of about 0.71 wt. % of the total uranium content of the low {sup 235}U content UF{sub 6}; and converting this low {sup 235}U content UF{sub 6} to metallic uranium for recycle to the atomic vapor laser isotope separation process. 4 figs.

  17. Metal silicide nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Lih-Juann; Wu, Wen-Wei

    2015-07-01

    The growth, properties and applications of metal silicide nanowires (NWs) have been extensively investigated. The investigations have led to significant advance in the understanding of one-dimensional (1D) metal silicide systems. For example, CoSi is paramagnetic in bulk form, but ferromagnetic in NW geometry. In addition, the helimagnetic phase and skyrmion state in MnSi are stabilized by NW morphology. The influencing factors on the growth of silicide phase have been elucidated for Ni-Si, Pt-Si, and Mn-Si systems. Promising results were obtained for spintronics, non-volatile memories, field emitter, magnetoresistive sensor, thermoelectric generator and solar cells. However, the main thrust has been in microelectronic devices and integrated circuits. Transistors of world-record small size have been fabricated. Reconfigurable Si NW transistors, dually active Si NW transistors and circuits with equal electron and hole transport have been demonstrated. Furthermore, multifunctional devices and logic gates with undoped Si NWs were reported. It is foreseen that practical applications will be realized in the near future.

  18. Nano-structured silicide formation by focused ion beam implantation and integration of silver metallization with thin film silicide layers

    NASA Astrophysics Data System (ADS)

    Mitan, Martin M.

    Nano-structured silicide formation was mediated through ion implantation. Silicide structures with dimensions of 170 nm were produced on (100) silicon substrates by ion implantation of 200 KeV As++ through a thin cobalt film on SiO2/Si structure. A selective reaction barrier at the Si/Co interface comprising of a thin (˜2 nm) oxide (SiO 2) prevents unwanted reactions. Ion-beam mixing was instrumental in the fracturing of the oxide layer, thereby allowing the migration of metal atoms across the SiO2/Co boundary for the silicidation reaction to proceed during subsequent rapid thermal anneal (RTA) treatments. A threshold dose of 3 x 1015 cm-2 was required for process initiation. Four-terminal resistance test structures were formed for electrical measurements. Resistivity values obtained ranged from 12 to 23 muO-cm, improving with increased ion dose. Application of this method can facilitate a wide variety of silicide structures. Part two of this study focused on the reliability study of silver metalization with silicides. Silicide thin films of CoSi2 and NiSi were prepared by solid phase reactions utilizing the bi-layer technique. Silver thin films were then deposited on the silicides to evaluate the thermal stability of the films during vacuum annealing. Rutherford backscattering spectrometry of annealed films revealed Ag film changes to occur at 700°C. No changes in the silicide thin films could be detected. Scanning electron microscopy of annealed films shows grain coarsening of the Ag film with increasing anneal temperature. At 650°C, voids begin to appear in the film. Increasing anneal temperature up to 700°C agglomerates the film. X-ray diffraction glancing angle scans revealed no phase changes in annealed films. The as-deposited case and 700°C both show the same reflection peaks being present. Secondary ion mass spectroscopy depth profiling revealed trace amounts of Ag at the silicide/silicon interface following a heat treatment. This occurrence appears to

  19. Dual fuel gradients in uranium silicide plates

    SciTech Connect

    Pace, B.W.

    1997-08-01

    Babcock & Wilcox has been able to achieve dual gradient plates with good repeatability in small lots of U{sub 3}Si{sub 2} plates. Improvements in homogeneity and other processing parameters and techniques have allowed the development of contoured fuel within the cladding. The most difficult obstacles to overcome have been the ability to evaluate the bidirectional fuel loadings in comparison to the perfect loading model and the different methods of instilling the gradients in the early compact stage. The overriding conclusion is that to control the contour of the fuel, a known relationship between the compact, the frames and final core gradient must exist. Therefore, further development in the creation and control of dual gradients in fuel plates will involve arriving at a plausible gradient requirement and building the correct model between the compact configuration and the final contoured loading requirements.

  20. Surface morphology of erbium silicide

    NASA Technical Reports Server (NTRS)

    Lau, S. S.; Pai, C. S.; Wu, C. S.; Kuech, T. F.; Liu, B. X.

    1982-01-01

    The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.

  1. 78 FR 56944 - Strata Energy, Inc. (Ross In Situ Recovery Uranium Project); Notice of Atomic Safety and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-16

    ... COMMISSION Strata Energy, Inc. (Ross In Situ Recovery Uranium Project); Notice of Atomic Safety and Licensing... (Board) in the above-captioned Strata Energy, Inc. case is hereby reconstituted by appointing Administrative Judge Craig M. White to serve on the Board in place of Administrative Judge Kenneth L. Mossman...

  2. Uranium Isotopic Ratio Measurements of U3O8 Reference Materials by Atom Probe Tomography

    SciTech Connect

    Fahey, Albert J.; Perea, Daniel E.; Bartrand, Jonah AG; Arey, Bruce W.; Thevuthasan, Suntharampillai

    2016-01-01

    We report results of measurements of isotopic ratios obtained with atom probe tomography on U3O8 reference materials certified for their isotopic abundances of uranium. The results show good agreement with the certified values. High backgrounds due to tails from adjacent peaks complicate the measurement of the integrated peak areas as well as the fact that only oxides of uranium appear in the spectrum, the most intense of which is doubly charged. In addition, lack of knowledge of other instrumental parameters, such as the dead time, may bias the results. Isotopic ratio measurements can be performed at the nanometer-scale with the expectation of sensible results. The abundance sensitivity and mass resolving power of the mass spectrometer are not sufficient to compete with magnetic-sector instruments but are not far from measurements made by ToF-SIMS of other isotopic systems. The agreement of the major isotope ratios is more than sufficient to distinguish most anthropogenic compositions from natural.

  3. Multireference configuration interaction calculations of the first six ionization potentials of the uranium atom

    NASA Astrophysics Data System (ADS)

    Bross, David H.; Parmar, Payal; Peterson, Kirk A.

    2015-11-01

    The first 6 ionization potentials (IPs) of the uranium atom have been calculated using multireference configuration interaction (MRCI+Q) with extrapolations to the complete basis set limit using new all-electron correlation consistent basis sets. The latter was carried out with the third-order Douglas-Kroll-Hess Hamiltonian. Correlation down through the 5s5p5d electrons has been taken into account, as well as contributions to the IPs due to the Lamb shift. Spin-orbit coupling contributions calculated at the 4-component Kramers restricted configuration interaction level, as well as the Gaunt term computed at the Dirac-Hartree-Fock level, were added to the best scalar relativistic results. The final ionization potentials are expected to be accurate to at least 5 kcal/mol (0.2 eV) and thus more reliable than the current experimental values of IP3 through IP6.

  4. Multireference configuration interaction calculations of the first six ionization potentials of the uranium atom

    SciTech Connect

    Bross, David H.; Parmar, Payal; Peterson, Kirk A.

    2015-11-14

    The first 6 ionization potentials (IPs) of the uranium atom have been calculated using multireference configuration interaction (MRCI+Q) with extrapolations to the complete basis set limit using new all-electron correlation consistent basis sets. The latter was carried out with the third-order Douglas-Kroll-Hess Hamiltonian. Correlation down through the 5s5p5d electrons has been taken into account, as well as contributions to the IPs due to the Lamb shift. Spin-orbit coupling contributions calculated at the 4-component Kramers restricted configuration interaction level, as well as the Gaunt term computed at the Dirac-Hartree-Fock level, were added to the best scalar relativistic results. The final ionization potentials are expected to be accurate to at least 5 kcal/mol (0.2 eV) and thus more reliable than the current experimental values of IP{sub 3} through IP{sub 6}.

  5. Uranium Adsorbent Fibers Prepared by Atom-Transfer Radical Polymerization from Chlorinated Polypropylene and Polyethylene Trunk Fibers

    DOE PAGES

    Brown, Suree; Chatterjee, Sabornie; Li, Meijun; ...

    2015-12-10

    Seawater contains a large amount of uranium (~4.5 billion tons) which can serve as a limitless supply of an energy source. However, in order to make the recovery of uranium from seawater economically feasible, lower manufacturing and deployment costs are required, and thus, solid adsorbents must have high uranium uptake, reusability, and high selectivity toward uranium. In this study, atom-transfer radical polymerization (ATRP), without the radiation-induced graft polymerization (RIGP), was used for grafting acrylonitrile (AN) and tert-butyl acrylate (tBA) from a new class of trunk fibers, forming adsorbents in a readily deployable form. The new class of trunk fibers wasmore » prepared by the chlorination of PP round fiber, hollow-gear-shaped PP fiber, and hollow-gear-shaped PE fiber. During ATRP, degrees of grafting (d.g.) varied according to the structure of active chlorine sites on trunk fibers and ATRP conditions, and the d.g. as high as 2570% was obtained. Resulting adsorbent fibers were evaluated in U-spiked simulated seawater and the maximum adsorption capacity of 146.6 g U/kg, much higher than that of a standard adsorbent JAEA fiber (75.1 g/kg), was obtained. This new type of trunk fibers can be used for grafting a variety of uranium-interacting ligands, including designed ligands that are highly selective toward uranium.« less

  6. Uranium Adsorbent Fibers Prepared by Atom-Transfer Radical Polymerization from Chlorinated Polypropylene and Polyethylene Trunk Fibers

    SciTech Connect

    Brown, Suree; Chatterjee, Sabornie; Li, Meijun; Yue, Yanfeng; Tsouris, Costas; Janke, Christopher J.; Saito, Tomonori; Dai, Sheng

    2015-12-10

    Seawater contains a large amount of uranium (~4.5 billion tons) which can serve as a limitless supply of an energy source. However, in order to make the recovery of uranium from seawater economically feasible, lower manufacturing and deployment costs are required, and thus, solid adsorbents must have high uranium uptake, reusability, and high selectivity toward uranium. In this study, atom-transfer radical polymerization (ATRP), without the radiation-induced graft polymerization (RIGP), was used for grafting acrylonitrile (AN) and tert-butyl acrylate (tBA) from a new class of trunk fibers, forming adsorbents in a readily deployable form. The new class of trunk fibers was prepared by the chlorination of PP round fiber, hollow-gear-shaped PP fiber, and hollow-gear-shaped PE fiber. During ATRP, degrees of grafting (d.g.) varied according to the structure of active chlorine sites on trunk fibers and ATRP conditions, and the d.g. as high as 2570% was obtained. Resulting adsorbent fibers were evaluated in U-spiked simulated seawater and the maximum adsorption capacity of 146.6 g U/kg, much higher than that of a standard adsorbent JAEA fiber (75.1 g/kg), was obtained. This new type of trunk fibers can be used for grafting a variety of uranium-interacting ligands, including designed ligands that are highly selective toward uranium.

  7. Determination of Krypton Diffusion Coefficients in Uranium Dioxide Using Atomic Scale Calculations.

    PubMed

    Vathonne, Emerson; Andersson, David A; Freyss, Michel; Perriot, Romain; Cooper, Michael W D; Stanek, Christopher R; Bertolus, Marjorie

    2017-01-03

    We present a study of the diffusion of krypton in UO2 using atomic scale calculations combined with diffusion models adapted to the system studied. The migration barriers of the elementary mechanisms for interstitial or vacancy assisted migration are calculated in the DFT+U framework using the nudged elastic band method. The attempt frequencies are obtained from the phonon modes of the defect at the initial and saddle points using empirical potential methods. The diffusion coefficients of Kr in UO2 are then calculated by combining this data with diffusion models accounting for the concentration of vacancies and the interaction of vacancies with Kr atoms. We determined the preferred mechanism for Kr migration and the corresponding diffusion coefficient as a function of the oxygen chemical potential μO or nonstoichiometry. For very hypostoichiometric (or U-rich) conditions, the most favorable mechanism is interstitial migration. For hypostoichiometric UO2, migration is assisted by the bound Schottky defect and the charged uranium vacancy, VU(4-). Around stoichiometry, migration assisted by the charged uranium-oxygen divacancy (VUO(2-)) and VU(4-) is the favored mechanism. Finally, for hyperstoichiometric or O-rich conditions, the migration assisted by two VU(4-) dominates. Kr migration is enhanced at higher μO, and in this regime, the activation energy will be between 4.09 and 0.73 eV depending on nonstoichiometry. The experimental values available are in the latter interval. Since it is very probable that these values were obtained for at least slightly hyperstoichiometric samples, our activation energies are consistent with the experimental data, even if further experiments with precisely controlled stoichiometry are needed to confirm these results. The mechanisms and trends with nonstoichiometry established for Kr are similar to those found in previous studies of Xe.

  8. Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

    SciTech Connect

    Lee, J.-G.; Nagase, T.; Yasuda, H.; Mori, H.

    2015-05-21

    The synthesis of metal silicide at the metal/silicon oxide interface by electronic excitation was investigated using transmission electron microscopy. A platinum silicide, α-Pt{sub 2}Si, was successfully formed at the platinum/silicon oxide interface under 25–200 keV electron irradiation. This is of interest since any platinum silicide was not formed at the platinum/silicon oxide interface by simple thermal annealing under no-electron-irradiation conditions. From the electron energy dependence of the cross section for the initiation of the silicide formation, it is clarified that the silicide formation under electron irradiation was not due to a knock-on atom-displacement process, but a process induced by electronic excitation. It is suggested that a mechanism related to the Knotek and Feibelman mechanism may play an important role in silicide formation within the solid. Similar silicide formation was also observed at the palladium/silicon oxide and nickel/silicon oxide interfaces, indicating a wide generality of the silicide formation by electronic excitation.

  9. Silicide surface phases on gold

    NASA Technical Reports Server (NTRS)

    Green, A. K.; Bauer, E.

    1981-01-01

    The crystalline silicide layers formed on (111) and (100) surfaces of Au films on various Si single-crystal substrates are studied by LEED and AES in conjunction with sputter-depth profiling as a function of annealing temperature. On the (111) surface, three basic silicide structures are obtained corresponding to layers of various thicknesses as obtained by different preparation conditions. The (100) surface shows only two different structures. None of the structures is compatible with the various bulk silicide structures deduced from X-ray diffraction. Using LEED as a criterion for the presence or absence of silicide on the surface, smaller layer thicknesses are obtained than reported previously on the basis of AES studies.

  10. Silicide surface phases on gold

    NASA Technical Reports Server (NTRS)

    Green, A. K.; Bauer, E.

    1981-01-01

    The crystalline silicide layers formed on (111) and (100) surfaces of Au films on various Si single-crystal substrates are studied by LEED and AES in conjunction with sputter-depth profiling as a function of annealing temperature. On the (111) surface, three basic silicide structures are obtained corresponding to layers of various thicknesses as obtained by different preparation conditions. The (100) surface shows only two different structures. None of the structures is compatible with the various bulk silicide structures deduced from X-ray diffraction. Using LEED as a criterion for the presence or absence of silicide on the surface, smaller layer thicknesses are obtained than reported previously on the basis of AES studies.

  11. Silicide Nanowires for Low-Resistance CMOS Transistor Contacts.

    NASA Astrophysics Data System (ADS)

    Zollner, Stefan

    2007-03-01

    Transition metal (TM) silicide nanowires are used as contacts for modern CMOS transistors. (Our smallest wires are ˜20 nm thick and ˜50 nm wide.) While much research on thick TM silicides was conducted long ago, materials perform differently at the nanoscale. For example, the usual phase transformation sequences (e.g., Ni, Ni2Si, NiSi, NiSi2) for the reaction of thick metal films on Si no longer apply to nanostructures, because the surface and interface energies compete with the bulk energy of a given crystal structure. Therefore, a NiSi film will agglomerate into hemispherical droplets of NiSi by annealing before it reaches the lowest-energy (NiSi2) crystalline structure. These dynamics can be tuned by addition of impurities (such as Pt in Ni). The Si surface preparation is also a more important factor for nanowires than for silicidation of thick TM films. Ni nanowires formed on Si surfaces that were cleaned and amorphized by sputtering with Ar ions have a tendency to form NiSi2 pyramids (``spikes'') even at moderate temperatures (˜400^oC), while similar Ni films formed on atomically clean or hydrogen-terminated Si form uniform NiSi nanowires. Another issue affecting TM silicides is the barrier height between the silicide contact and the silicon transistor. For most TM silicides, the Fermi level of the silicide is aligned with the center of the Si band gap. Therefore, silicide contacts experience Schottky barrier heights of around 0.5 eV for both n-type and p-type Si. The resulting contact resistance becomes a significant term for the overall resistance of modern CMOS transistors. Lowering this contact resistance is an important goal in CMOS research. New materials are under investigation (for example PtSi, which has a barrier height of only 0.3 eV to p-type Si). This talk will describe recent results, with special emphasis on characterization techniques and electrical testing useful for the development of silicide nanowires for CMOS contacts. In collaboration

  12. High temperature structural silicides

    SciTech Connect

    Petrovic, J.J.

    1997-03-01

    Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi{sub 2}-based materials, which are borderline ceramic-intermetallic compounds. MoSi{sub 2} single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi{sub 2} possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi{sub 2}-Si{sub 3}N{sub 4} composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi{sub 2}-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing.

  13. Conformal Ni-silicide formation over three-dimensional device structures

    SciTech Connect

    Zhu Zhiwei; Zhang Shili; Gao Xindong; Kubart, Tomas; Zhang Zhibin; Wu Dongping

    2012-07-30

    This letter reports on conformal formation of ultrathin Ni-silicide films over a three-dimension structure relevant to the most advanced tri-gate transistor architecture. This is achieved by combining ionization of the sputtered Ni atoms with application of an appropriate bias to the Si substrate during the sputter-deposition of Ni films. In comparison, use of ordinary DC sputtering for Ni deposition results in thinner or less uniform silicide films on the vertical sidewalls than on the top surface of the three-dimensional structure. The roughened Si sidewall surface is ascribed to be responsible for a deteriorated thermal stability of the resultant silicide films.

  14. Analysis of Nickel Silicides by SIMS and LEAP

    SciTech Connect

    Ronsheim, Paul; McMurray, Jeff; Flaitz, Philip; Parks, Christopher

    2007-09-26

    Ni-silicides formed by a variety of processing techniques were studied with secondary ion mass spectroscopy (SIMS) and local electrode atom probe (LEAP registered ) analysis. SIMS provided 1-D chemical analysis over an approximately 60 micron diameter area. LEAP provided 3-D atom identities and locations over an approximately 100-150 nm diameter area. It was determined that the 200 deg. C drive-in anneal results in a Ni{sub 3}Si{sub 2} phase, which is converted to NiSi at temperatures between 360 deg. C-400 deg. C. LEAP detects no As or Pt segregation after the 200 deg. C drive-in anneal, but did quantify As segregation of up to 7% of the material composition just inside the NiSi-Si interface after the phase-formation anneal. The presence of oxygen at the interface results in a silicide chemical surface roughness of up to 3.5 nm as compared to 0.5 nm with a clean, non-oxidized surface. Silicide stability was demonstrated over the phase-formation-temperature range of 360 deg. C - 400 deg. C including when a second rapid thermal anneal step was used. LEAP analysis was also able to quantify the surface roughness of the interface as a function of anneal temperature and the non-uniform Pt and As distribution across the silicide surface as viewed in 2-D surface projection.

  15. Multireference configuration interaction calculations of the first six ionization potentials of the uranium atom

    SciTech Connect

    Bross, David H.; Parmar, Payal; Peterson, Kirk A.

    2015-11-12

    The first 6 ionization potentials (IPs) of the uranium atom have been calculated using multireference configuration interaction (MRCI+Q) with extrapolations to the complete basis set (CBS) limit using new all-electron correlation consistent basis sets. The latter were carried out with the third-order Douglas-Kroll-Hess Hamiltonian. Correlation down through the 5s5p5d electrons have been taken into account, as well as contributions to the IPs due to the Lamb shift. Spin-orbit coupling contributions calculated at the 4-component Kramers restricted configuration interaction level, as well as the Gaunt term computed at the Dirac-Hartree-Fock level, were added to the best scalar relativistic results. As a result, the final ionization potentials are expected to be accurate to at least 5 kcal/mol (0.2 eV), and thus more reliable than the current experimental values of IP3 through IP6.

  16. Multireference configuration interaction calculations of the first six ionization potentials of the uranium atom

    DOE PAGES

    Bross, David H.; Parmar, Payal; Peterson, Kirk A.

    2015-11-12

    The first 6 ionization potentials (IPs) of the uranium atom have been calculated using multireference configuration interaction (MRCI+Q) with extrapolations to the complete basis set (CBS) limit using new all-electron correlation consistent basis sets. The latter were carried out with the third-order Douglas-Kroll-Hess Hamiltonian. Correlation down through the 5s5p5d electrons have been taken into account, as well as contributions to the IPs due to the Lamb shift. Spin-orbit coupling contributions calculated at the 4-component Kramers restricted configuration interaction level, as well as the Gaunt term computed at the Dirac-Hartree-Fock level, were added to the best scalar relativistic results. As amore » result, the final ionization potentials are expected to be accurate to at least 5 kcal/mol (0.2 eV), and thus more reliable than the current experimental values of IP3 through IP6.« less

  17. An average atom code for warm matter: application to aluminum and uranium

    NASA Astrophysics Data System (ADS)

    Pénicaud, Michel

    2009-03-01

    In astrophysics and in other sciences there is sometimes a need for information about the properties of matter, particularly equations of state, in extreme conditions of pressure and temperature. Global equation of state models, which represent solid, fluid and plasma states, typically consist of three parts: the cold curve, the ion-thermal contribution and the electron-thermal contribution. For the calculation of the latest part we present here an average atom embedded in a jellium code. We employ Liberman's relativistic and quantum model of matter which is a significant advance in complexity beyond the commonly used Thomas-Fermi model. We have applied specific algorithms to deal with the highly oscillatory nature of the free wavefunctions at high temperatures and to capture resonances which form in the continuum when bound states are destroyed by pressure ionization. Also we use massive parallel computing to treat the huge number of free wavefunctions at high temperatures (up to 109 K). Densities of states of resonant states are shown for uranium. With our code, which we have called Paradisio, we obtain tables of electron-thermal entropies from which free energies and pressures are derived. Our results are compared with those calculated in the Thomas-Fermi approximation and with available experiments. In aluminum, with our quantum code, a shell structure appears on the Hugoniot and a first-order metallic-nonmetallic transition is created at low densities and temperatures.

  18. Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

    PubMed Central

    2011-01-01

    We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field. PMID:21968083

  19. Determination of krypton diffusion coefficients in uranium dioxide using atomic scale calculations

    DOE PAGES

    Vathonne, Emerson; Andersson, David Ragnar Anders; Freyss, Michel; ...

    2016-12-16

    We present a study of the diffusion of krypton in UO2 using atomic scale calculations combined with diffusion models adapted to the system studied. The migration barriers of the elementary mechanisms for interstitial or vacancy assisted migration are calculated in the DFT + U framework using the nudged elastic band method. The attempt frequencies are obtained from the phonon modes of the defect at the initial and saddle points using empirical potential methods. The diffusion coefficients of Kr in UO2 are then calculated by combining this data with diffusion models accounting for the concentration of vacancies and the interaction ofmore » vacancies with Kr atoms. We determined the preferred mechanism for Kr migration and the corresponding diffusion coefficient as a function of the oxygen chemical potential μO or nonstoichiometry. For very hypostoichiometric (or U-rich) conditions, the most favorable mechanism is interstitial migration. For hypostoichiometric UO2, migration is assisted by the bound Schottky defect and the charged uranium vacancy, VU4–. Around stoichiometry, migration assisted by the charged uranium–oxygen divacancy (VUO2–) and VU4– is the favored mechanism. Finally, for hyperstoichiometric or O-rich conditions, the migration assisted by two VU4– dominates. Kr migration is enhanced at higher μO, and in this regime, the activation energy will be between 4.09 and 0.73 eV depending on nonstoichiometry. The experimental values available are in the latter interval. Since it is very probable that these values were obtained for at least slightly hyperstoichiometric samples, our activation energies are consistent with the experimental data, even if further experiments with precisely controlled stoichiometry are needed to confirm these results. Finally, the mechanisms and trends with nonstoichiometry established for Kr are similar to those found in previous studies of Xe.« less

  20. Near-threshold photoionization of hydrogenlike uranium studied in ion-atom collisions via the time-reversed process.

    PubMed

    Stöhlker, T; Ma, X; Ludziejewski, T; Beyer, H F; Bosch, F; Brinzanescu, O; Dunford, R W; Eichler, J; Hagmann, S; Ichihara, A; Kozhuharov, C; Krämer, A; Liesen, D; Mokler, P H; Stachura, Z; Swiat, P; Warczak, A

    2001-02-05

    Radiative electron capture, the time-reversed photoionization process occurring in ion-atom collisions, provides presently the only access to photoionization studies for very highly charged ions. By applying the deceleration mode of the ESR storage ring, we studied this process in low-energy collisions of bare uranium ions with low- Z target atoms. This technique allows us to extend the current information about photoionization to much lower energies than those accessible for neutral heavy elements in the direct reaction channel. The results prove that for high- Z systems, higher-order multipole contributions and magnetic corrections persist even at energies close to the threshold.

  1. International Atomic Energy Agency support of research reactor highly enriched uranium to low enriched uranium fuel conversion projects

    SciTech Connect

    Bradley, E.; Adelfang, P.; Goldman, I.N.

    2008-07-15

    The IAEA has been involved for more than twenty years in supporting international nuclear non- proliferation efforts associated with reducing the amount of highly enriched uranium (HEU) in international commerce. IAEA projects and activities have directly supported the Reduced Enrichment for Research and Test Reactors (RERTR) programme, as well as directly assisted efforts to convert research reactors from HEU to LEU fuel. HEU to LEU fuel conversion projects differ significantly depending on several factors including the design of the reactor and fuel, technical needs of the member state, local nuclear infrastructure, and available resources. To support such diverse endeavours, the IAEA tailors each project to address the relevant constraints. This paper presents the different approaches taken by the IAEA to address the diverse challenges involved in research reactor HEU to LEU fuel conversion projects. Examples of conversion related projects in different Member States are fully detailed. (author)

  2. Composition of CVD tungsten silicides

    SciTech Connect

    Hara, T.; Takahashi, H.; Ishizawa, Y.

    1987-05-01

    The composition of tungsten silicide (WSi/sub x/) deposited by chemical vapor deposition on silicon and silicon dioxide substrates was studied. The composition x changed from 2.7 to 2.2 with varying WF/sub 6/ flow rate from 6 to 20 cm/sup 3//min in the deposition on silicon. When annealing was performed at 1000C, the dissociation of excess silicon occurred from the nonstoichiometric silicide in the layer on the silicon. As a result, the composition of each layer, which was different when deposited, tended toward the same composition of around 2.1. This result indicated the formation of near-stoichiometric silicide as a result of annealing.

  3. Matrix infrared spectroscopic and density functional theoretical investigations on thorium and uranium atom reactions with dimethyl ether.

    PubMed

    Gong, Yu; Andrews, Lester

    2011-11-14

    Reactions of laser-ablated thorium and uranium atoms with dimethyl ether were investigated using matrix isolation infrared spectroscopy. Four types of reaction products for both uranium and thorium were identified using deuterium substituted samples as well as density functional frequency and energy calculations. Ground state uranium and thorium atoms react with dimethyl ether spontaneously to give the M(CH(3)OCH(3)) complexes (M = Th, U) on annealing, which are predicted to have C(2v) symmetry with triplet (Th) and quintet (U) ground states. Subsequent visible irradiation produces the divalent CH(3)OThCH(3) and CH(3)OUCH(3) insertion products with singlet and quintet states lowest in energy. Further UV irradiation induces isomerization of the CH(3)OMCH(3) molecules to the (CH(3))(2)MO isomers with M=O double bonds and pyramidal structures. In the presence of another dimethyl ether reagent, evidence for (CH(3)O)(2)M(CH(3))(2) molecules is also produced upon UV irradiation.

  4. Linking atomic and mesoscopic scales for the modelling of the transport properties of uranium dioxide under irradiation

    NASA Astrophysics Data System (ADS)

    Bertolus, Marjorie; Freyss, Michel; Dorado, Boris; Martin, Guillaume; Hoang, Kiet; Maillard, Serge; Skorek, Richard; Garcia, Philippe; Valot, Carole; Chartier, Alain; Van Brutzel, Laurent; Fossati, Paul; Grimes, Robin W.; Parfitt, David C.; Bishop, Clare L.; Murphy, Samuel T.; Rushton, Michael J. D.; Staicu, Dragos; Yakub, Eugen; Nichenko, Sergii; Krack, Matthias; Devynck, Fabien; Ngayam-Happy, Raoul; Govers, Kevin; Deo, Chaitanya S.; Behera, Rakesh K.

    2015-07-01

    This article presents a synthesis of the investigations at the atomic scale of the transport properties of defects and fission gases in uranium dioxide, as well as of the transfer of results from the atomic scale to models at the mesoscopic scale, performed during the F-BRIDGE European project (2008-2012). We first present the mesoscale models used to investigate uranium oxide fuel under irradiation, and in particular the cluster dynamics and kinetic Monte Carlo methods employed to model the behaviour of defects and fission gases in UO2, as well as the parameters of these models. Second, we describe briefly the atomic scale methods employed, i.e. electronic structure calculations and empirical potential methods. Then, we show the results of the calculation of the data necessary for the mesoscale models using these atomic scale methods. Finally, we summarise the links built between the atomic and mesoscopic scale by listing the data calculated at the atomic scale which are to be used as input in mesoscale modelling. Despite specific difficulties in the description of fuel materials, the results obtained in F-BRIDGE show that atomic scale modelling methods are now mature enough to obtain precise data to feed higher scale models and help interpret experiments on nuclear fuels. These methods bring valuable insight, in particular the formation, binding and migration energies of point and extended defects, fission product localization, incorporation energies and migration pathways, elementary mechanisms of irradiation induced processes. These studies open the way for the investigation of other significant phenomena involved in fuel behaviour, in particular the thermochemical and thermomechanical properties and their evolution in-pile, complex microstructures, as well as of more complex fuels.

  5. Magnesium silicide intermetallic alloys

    NASA Astrophysics Data System (ADS)

    Li, Gh.; Gill, H. S.; Varin, R. A.

    1993-11-01

    Methods of induction melting an ultra-low-density magnesium silicide (Mg2Si) intermetallic and its alloys and the resulting microstructure and microhardness were studied. The highest quality ingots of Mg2Si alloys were obtained by triple melting in a graphite crucible coated with boron nitride to eliminate reactivity, under overpressure of high-purity argon (1.3 X 105 Pa), at a temperature close to but not exceeding 1105 °C ± 5 °C to avoid excessive evaporation of Mg. After establishing the proper induction-melting conditions, the Mg-Si binary alloys and several Mg2Si alloys macroalloyed with 1 at. pct of Al, Ni, Co, Cu, Ag, Zn, Mn, Cr, and Fe were induction melted and, after solidification, investigated by optical microscopy and quantitative X-ray energy dispersive spectroscopy (EDS). Both the Mg-rich and Si-rich eutectic in the binary alloys exhibited a small but systematic increase in the Si content as the overall composition of the binary alloy moved closer toward the Mg2Si line compound. The Vickers microhardness (VHN) of the as-solidified Mg-rich and Si-rich eutectics in the Mg-Si binary alloys decreased with increasing Mg (decreasing Si) content in the eutectic. This behavior persisted even after annealing for 75 hours at 0.89 pct of the respective eutectic temperature. The Mg-rich eutectic in the Mg2Si + Al, Ni, Co, Cu, Ag, and Zn alloys contained sections exhibiting a different optical contrast and chemical composition than the rest of the eutectic. Some particles dispersed in the Mg2Si matrix were found in the Mg2Si + Cr, Mn, and Fe alloys. The EDS results are presented and discussed and compared with the VHN data.

  6. Determination of krypton diffusion coefficients in uranium dioxide using atomic scale calculations

    SciTech Connect

    Vathonne, Emerson; Andersson, David Ragnar Anders; Freyss, Michel; Perriot, Romain Thibault; Cooper, Michael William Donald; Stanek, Christopher Richard; Bertolus, Marjorie

    2016-12-16

    We present a study of the diffusion of krypton in UO2 using atomic scale calculations combined with diffusion models adapted to the system studied. The migration barriers of the elementary mechanisms for interstitial or vacancy assisted migration are calculated in the DFT + U framework using the nudged elastic band method. The attempt frequencies are obtained from the phonon modes of the defect at the initial and saddle points using empirical potential methods. The diffusion coefficients of Kr in UO2 are then calculated by combining this data with diffusion models accounting for the concentration of vacancies and the interaction of vacancies with Kr atoms. We determined the preferred mechanism for Kr migration and the corresponding diffusion coefficient as a function of the oxygen chemical potential μO or nonstoichiometry. For very hypostoichiometric (or U-rich) conditions, the most favorable mechanism is interstitial migration. For hypostoichiometric UO2, migration is assisted by the bound Schottky defect and the charged uranium vacancy, VU4–. Around stoichiometry, migration assisted by the charged uranium–oxygen divacancy (VUO2–) and VU4– is the favored mechanism. Finally, for hyperstoichiometric or O-rich conditions, the migration assisted by two VU4– dominates. Kr migration is enhanced at higher μO, and in this regime, the activation energy will be between 4.09 and 0.73 eV depending on nonstoichiometry. The experimental values available are in the latter interval. Since it is very probable that these values were obtained for at least slightly hyperstoichiometric samples, our activation energies are consistent with the experimental data, even if further experiments with precisely controlled stoichiometry are needed to confirm these results. Finally, the mechanisms and trends with nonstoichiometry

  7. The oxidation of titanium silicide

    NASA Astrophysics Data System (ADS)

    Sandwick, Thom; Rajan, Krishna

    1990-11-01

    This paper investigates the morphology changes that occur with the oxidation of a ti-tanium silicide—polysilicon system. These changes were studied as a function of poly-silicon doping and silicide formation parameters. Emphasis was placed on transmission electron microscopy studies of the samples by planar and cross sectional techniques. Various surface analysis methods have also been used to characterize the films. This study helps to define the possible use and shortcomings of a self aligned titanium silicide insulator. The results show that varying quality insulators result, dependent largely on the initial conditions of the titanium silicide. After oxidation the Auger and TEM anal-ysis show that in all cases some form of silicon dioxide was created, but typically a considerable amount of titanium oxide was also present. For instance, it was apparent that more titanium oxide formed on the samples RTA’ed for 1 min at 700° C than the 5 min at 800° C and considerably more on the arsenic doped sample than the boron doped. The silicide also had morphology changes as the result of the oxidation. There was a phase change from the C49 to C54 phase for the 1 min at 700° C samples as would be expected at the time and temperature of the oxidation. There also was a sig-nificant amount of agglomeration and epitaxial growth observed. Further work is re-quired to completely characterize these phenomena.

  8. Nanoscale contact engineering for Silicon/Silicide nanowire devices

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Chen

    Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at nanoscale have indicated possible deviations from the bulk and the thin film system. Here we studied growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. We have grown single crystal PtSi nanowires and PtSi/Si/PtSi nanowire heterostructures through solid state reaction. TEM studies show that the heterostructures have atomically sharp interfaces free of defects. Electrical measurement of PtSi nanowires shows a low resistivity of ˜28.6 μΩ·cm and a high breakdown current density beyond 108 A/cm2. Furthermore, using single-crystal PtSi/Si/PtSi nanowire heterostructures with atomically clean interfaces, we have fabricated p-channel enhancement mode transistors with the best reported performance for intrinsic silicon nanowires to date. In our results, silicide can provide a clean and no Fermi level pinning interface and then silicide can form Ohmic-contact behavior by replacing the source/drain metal with PtSi. It has been proven by our experiment by contacting PtSi with intrinsic Si nanowires (no extrinsic doping) to achieve high performance p-channel device. By utilizing the same approach, single crystal MnSi nanowires and MnSi/Si/MnSi nanowire heterojunction with atomically sharp interfaces can also been grown. Electrical transport studies on Mn

  9. Investigations of ion-irradiated uranium dioxide nuclear fuel with laser-assisted atom probe tomography

    NASA Astrophysics Data System (ADS)

    Valderrama, Billy

    Performance in commercial light water reactors is dictated by the ability of its fuel material, uranium dioxide (UO2), to transport heat generated during the fission process. It is widely known that the service lifetime is limited by irradiation-induced microstructural changes that degrade the thermal performance of UO2. Studying the role of complex, often interacting mechanisms that occur during the early stages of microstructural evolution presents a challenge. Phenomena of particular interest are the segregation of fission products to form bubbles and their resultant effect on grain boundary (GB) mobility, and the effect of irradiation on fuel stoichiometry. Each mechanism has a profound consequence on fuel thermal conductivity. Several advanced analytical techniques, such as transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, etc. have been used to study these mechanisms. However, they each have limitations and cannot individually provide the necessary information for deeper understanding. One technique that has been under utilized is atom probe tomography (APT), which has a unique ability to spatially resolve small-scale chemical variations. APT uses the principle of field ionization to evaporate surface ions for chemical analysis. For low electrical conductivity systems, a pulsed laser is used to thermally assist in the evaporation process. One factor complicating the analysis is that laser-material interactions are poorly understood for oxide materials and literature using this technique with UO2 is lacking. Therefore, an initial systematic study to identify the optimal conditions for the analysis of UO2 using laser-assisted APT was conducted. A comparative study on the evaporation behavior between CeO2 and UO2 was followed. CeO2 was chosen due to its technological relevancy and availability of comparative studies with laser-assisted APT. Dissimilar evaporation behavior between these materials was identified and attributed

  10. Plutonium and Uranium Atom Ratios and Activity Levels in Cochiti Lake Bottom Sediments Provided by Pueblo de Cochiti

    SciTech Connect

    Gallaher, B.M.; Efurd, D.W.; Rokop, D.J.; Benjamin, T.M.

    1999-05-01

    Historical operations at the Los Alamos National Laboratory have contaminated stream sediments with plutonium and other radionuclides. A small portion of these contaminated sediments has been carried by floods into the Rio Grande drainage system, eventually to be trapped by Cochiti Lake located on Pueblo de Cochiti lands approximately 8 km downstream of the Laboratory. In this study, lake bottom sediment samples provided by the Pueblo de Cochiti were analyzed by thermal ionization mass spectrometry to determine plutonium and uranium activity levels and isotopic atom ratios. This specialized analytical method allows us to take isotopic fingerprints of radionuclides found in the sediment and to determine how much plutonium and uranium came from the Laboratory and how much was deposited by worldwide fallout or is natural. Two distinct types of samples were processed: segments of a continuous vertical core of the entire accumulated sediment sequence and other samples from across the lake bottom at the water/sediment interface. Based on measurement of the {sup 240}Pu/{sup 239}Pu atom ratio, Laboratory-derived plutonium is present in eight of nine samples at the core site. On a depth-weighted basis, approximately one-half of the {sup 239}Pu and {sup 240}Pu came from early operations at the Laboratory; the remaining plutonium came from fallout dispersed by above-ground nuclear tests. In contrast to the core site, the samples from the other locations showed little or no evidence of Laboratory-derived plutonium, with more than 90 percent of the plutonium attributable to fallout. The overall amount of plutonium in all the samples is of the same magnitude as other reservoirs in the region. The net increase in plutonium over upstream reservoirs unaffected by Laboratory activities is a maximum of 0.014 pCi/g or 3.5 times. All of the samples reflect natural uranium compositions. Laboratory-derived uranium is not identifiable, presumably because the sediment contains abundant

  11. Hybrid interferometric/dispersive atomic spectroscopy of laser-induced uranium plasma

    NASA Astrophysics Data System (ADS)

    Morgan, Phyllis K.; Scott, Jill R.; Jovanovic, Igor

    2016-02-01

    An established optical emission spectroscopy technique, laser-induced breakdown spectroscopy (LIBS), holds promise for detection and rapid analysis of elements relevant for nuclear safeguards, nonproliferation, and nuclear power, including the measurement of isotope ratios. One such important application of LIBS is the measurement of uranium enrichment (235U/238U), which requires high spectral resolution (e.g., 25 pm for the 424.4 nm U II line). High-resolution dispersive spectrometers necessary for such measurements are typically bulky and expensive. We demonstrate the use of an alternative measurement approach, which is based on an inexpensive and compact Fabry-Perot etalon integrated with a low to moderate resolution Czerny-Turner spectrometer, to achieve the resolution needed for isotope selectivity of LIBS of uranium in ambient air. Spectral line widths of ~ 10 pm have been measured at a center wavelength 424.437 nm, clearly discriminating the natural from the highly enriched uranium.

  12. Assessment of current atomic scale modelling methods for the investigation of nuclear fuels under irradiation: Example of uranium dioxide

    SciTech Connect

    Bertolus, Marjorie; Krack, Matthias; Freyss, Michel; Devanathan, Ram

    2015-10-13

    Multiscale approaches are developed to build more physically based kinetic and mechanical mesoscale models to enhance the predictive capability of fuel performance codes and increase the efficiency of the development of the safer and more innovative nuclear materials needed in the future. Atomic scale methods, and in particular electronic structure and empirical potential methods, form the basis of this multiscale approach. It is therefore essential to know the accuracy of the results computed at this scale if we want to feed them into higher scale models. We focus here on the assessment of the description of interatomic interactions in uranium dioxide using on the one hand electronic structure methods, in particular in the density functional theory (DFT) framework and on the other hand empirical potential methods. These two types of methods are complementary, the former enabling to get results from a minimal amount of input data and further insight into the electronic and magnetic properties, while the latter are irreplaceable for studies where a large number of atoms needs to be considered. We consider basic properties as well as specific ones, which are important for the description of nuclear fuel under irradiation. These are especially energies, which are the main data passed to higher scale models. We limit ourselves to uranium dioxide.

  13. Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth

    SciTech Connect

    Yaish, Y. E.; Beregovsky, M.; Katsman, A.; Cohen, G. M.

    2011-05-01

    The common practice for nickel silicide formation in silicon nanowires (SiNWs) relies on axial growth of silicide along the wire that is initiated from nickel reservoirs at the source and drain contacts. In the present work the silicide intrusions were studied for various parameters including wire diameter (25-50 nm), annealing time (15-120 s), annealing temperature (300-440 deg. C), and the quality of the initial Ni/Si interface. The silicide formation was investigated by high-resolution scanning electron microscopy, high-resolution transmission electron microscopy (TEM), and atomic force microscopy. The main part of the intrusion formed at 420 deg. C consists of monosilicide NiSi, as was confirmed by energy dispersive spectroscopy STEM, selected area diffraction TEM, and electrical resistance measurements of fully silicided SiNWs. The kinetics of nickel silicide axial growth in the SiNWs was analyzed in the framework of a diffusion model through constrictions. The model calculates the time dependence of the intrusion length, L, and predicts crossover from linear to square root time dependency for different wire parameters, as confirmed by the experimental data.

  14. Neutronic study on conversion of SAFARI-1 to LEU silicide fuel

    SciTech Connect

    Ball, G.; Pond, R.; Hanan, N.; Matos, J.

    1995-02-01

    This paper marks the initial study into the technical and economic feasibility of converting the SAFARI-1 reactor in South Africa to LEU silicide fuel. Several MTR assembly geometries and LEU uranium densities have been studied and compared with MEU and HEU fuels. Two factors of primary importance for conversion of SAFARI-1 to LEU fuel are the economy of the fuel cycle and the performance of the incore and excore irradiation positions.

  15. Ferromagnetic properties of manganese doped iron silicide

    NASA Astrophysics Data System (ADS)

    Ruiz-Reyes, Angel; Fonseca, Luis F.; Sabirianov, Renat

    We report the synthesis of high quality Iron silicide (FeSi) nanowires via Chemical Vapor Deposition (CVD). The materials exhibits excellent magnetic response at room temperature, especially when doped with manganese showing values of 2.0 X 10-04 emu for the FexMnySi nanowires. SEM and TEM characterization indicates that the synthesized nanowires have a diameter of approximately 80nm. MFM measurements present a clear description of the magnetic domains when the nanowires are doped with manganese. Electron Diffraction and XRD measurements confirms that the nanowires are single crystal forming a simple cubic structure with space group P213. First-principle calculations were performed on (111) FeSi surface using the Vienna ab initio simulation package (VASP). The exchange correlations were treated under the Ceperley-Alder (CA) local density approximation (LDA). The Brillouin Zone was sampled with 8x8x1 k-point grid. A total magnetic moment of about 10 μB was obtained for three different surface configuration in which the Iron atom nearest to the surface present the higher magnetization. To study the effect of Mn doping, Fe atom was replaced for a Mn. Stronger magnetization is presented when the Mn atom is close to the surface. The exchange coupling constant have been evaluated calculating the energy difference between the ferromagnetic and anti-ferromagnetic configurations.

  16. Oxygen chemisorption and oxide formation on Ni silicide surfaces at room temperature

    NASA Astrophysics Data System (ADS)

    Valeri, S.; Del Pennino, U.; Lomellini, P.; Sassaroli, P.

    1984-10-01

    Auger spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) have been used in a comparative study of the room temperature oxidation of Ni silicides of increasing silicon content, from Ni3Si to NiSi2. The results were compared with those for the oxidation of pure Si and Ni. All suicide surfaces in the exposure range between 0.2 and 104 L follow two-step oxidation kinetics: the first step is characterized by an oxygen uptake rate higher than in the second one. Attention was focused on the oxygen induced modifications of metal and silicon AES and XPS spectra in silicides, which are indicative of changes in the local electronic structure and in the chemical bonding. In general oxygen bonds with silicon leaving the metal unaffected; however, at high exposures, characteristic feature of the Ni-oxygen bonds appear in the Ni(MVV) Auger line of the Ni-rich silicides. The presence of Ni atoms enhances considerably the Si oxidation process in silicides with respect to pure Si, in terms both of a higher Si oxidation state and a higher oxygen uptake; this enhancement is stronger in Ni-rich silicides than in Si-rich silicides. The oxygen induced contributions in the Si(LVV) Auger line show structures at 76 and 83 eV, and those in the Si 2p photoemission spectra show binding energy shifts between -1 and -3.8 eV; we conclude that the oxidation products are mainly silicon suboxides, like Si2O3 and SiO; only on Ni3 Si at 104 L, a significant contribution of SiO2 was found. The Ni catalytic effect on Si oxidation has been discussed in terms of the suicide heat of formation, of the breaking of the silicon sp3 configuration in silicides and of the metal atom dissociative effect on the O2 molecule.

  17. Hybrid interferometric/dispersive atomic spectroscopy of laser-induced uranium plasma

    DOE PAGES

    Morgan, Phyllis K.; Scott, Jill R.; Jovanovic, Igor

    2015-12-19

    An established optical emission spectroscopy technique, laser-induced breakdown spectroscopy (LIBS), holds promise for detection and rapid analysis of elements relevant for nuclear safeguards, nonproliferation, and nuclear power, including the measurement of isotope ratios. One such important application of LIBS is the measurement of uranium enrichment (235U/238U), which requires high spectral resolution (e.g., 25 pm for the 424.4 nm U II line). High-resolution dispersive spectrometers necessary for such measurements are typically bulky and expensive. We demonstrate the use of an alternative measurement approach, which is based on an inexpensive and compact Fabry–Perot etalon integrated with a low to moderate resolution Czerny–Turnermore » spectrometer, to achieve the resolution needed for isotope selectivity of LIBS of uranium in ambient air. Furthermore, spectral line widths of ~ 10 pm have been measured at a center wavelength 424.437 nm, clearly discriminating the natural from the highly enriched uranium.« less

  18. Hybrid interferometric/dispersive atomic spectroscopy of laser-induced uranium plasma

    SciTech Connect

    Morgan, Phyllis K.; Scott, Jill R.; Jovanovic, Igor

    2015-12-19

    An established optical emission spectroscopy technique, laser-induced breakdown spectroscopy (LIBS), holds promise for detection and rapid analysis of elements relevant for nuclear safeguards, nonproliferation, and nuclear power, including the measurement of isotope ratios. One such important application of LIBS is the measurement of uranium enrichment (235U/238U), which requires high spectral resolution (e.g., 25 pm for the 424.4 nm U II line). High-resolution dispersive spectrometers necessary for such measurements are typically bulky and expensive. We demonstrate the use of an alternative measurement approach, which is based on an inexpensive and compact Fabry–Perot etalon integrated with a low to moderate resolution Czerny–Turner spectrometer, to achieve the resolution needed for isotope selectivity of LIBS of uranium in ambient air. Furthermore, spectral line widths of ~ 10 pm have been measured at a center wavelength 424.437 nm, clearly discriminating the natural from the highly enriched uranium.

  19. Improved high-temperature silicide coatings

    NASA Technical Reports Server (NTRS)

    Klopp, W. D.; Stephens, J. R.; Stetson, A. R.; Wimber, R. T.

    1969-01-01

    Special technique for applying silicide coatings to refractory metal alloys improves their high-temperature protective capability. Refractory metal powders mixed with a baked-out organic binder and sintered in a vacuum produces a porous alloy layer on the surface. Exposing the layer to hot silicon converts it to a silicide.

  20. Silicidation of Niobium Deposited on Silicon by Physical Vapor Deposition

    SciTech Connect

    Coumba Ndoye, Kandabara Tapily, Marius Orlowski, Helmut Baumgart, Diefeng Gu

    2011-07-01

    Niobium was deposited by physical vapor deposition (PVD) using e-beam evaporation on bare (100) silicon substrates and SiO2 surfaces. The formation of niobium silicide was investigated by annealing PVD Nb films in the temperatures range 400–1000°C. At all elevated annealing temperatures the resistivity of Nb silicide is substantially higher than that of Nb. The Nb silicidation as a function of temperature has been investigated and different NbXSiy compounds have been characterized. It has been observed that the annealing of the Nb film on Si is accompanied by a strong volume expansion of about 2.5 of the resulting reacted film. The films' structural properties were studied using X-Ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM), which was not previously presented in the context of the extant NbSi literature. The X-Ray diffraction characterization of the Nb on Si sample annealed at 1000°C, showed the presence of hexagonal Nb5Si3 phases, with a dominant peak at the (200) plane, and NbSi2 phases. Fractal dimension calculations indicate a distinct transition from Stranski-Krastanov to Volmer-Weber film growth for NbSi formation at the annealing temperature of 600°C and above.

  1. First-principles study on the interaction of nitrogen atom with α–uranium: From surface adsorption to bulk diffusion

    SciTech Connect

    Su, Qiulei; Deng, Huiqiu E-mail: hqdeng@gmail.com; Xiao, Shifang; Li, Xiaofan; Hu, Wangyu; Ao, Bingyun; Chen, Piheng

    2014-04-28

    Experimental studies of nitriding on uranium surfaces show that the modified layers provide considerable protection against air corrosion. The bimodal distribution of nitrogen is affected by both its implantation and diffusion, and the diffusion of nitrogen during implantation is also governed by vacancy trapping. In the present paper, nitrogen adsorption, absorption, diffusion, and vacancy trapping on the surface of and in the bulk of α–uranium are studied with a first-principles density functional theory approach and the climbing image nudged elastic band method. The calculated results indicate that, regardless of the nitrogen coverage, a nitrogen atom prefers to reside at the hollow1 site and octahedral (Oct) site on and below the surface, respectively. The lowest energy barriers for on-surface and penetration diffusion occur at a coverage of 1/2 monolayer. A nitrogen atom prefers to occupy the Oct site in bulk α–uranium. High energy barriers are observed during the diffusion between neighboring Oct sites. A vacancy can capture its nearby interstitial nitrogen atom with a low energy barrier, providing a significant attractive nitrogen-vacancy interaction at the trapping center site. This study provides a reference for understanding the nitriding process on uranium surfaces.

  2. First-principles study on the interaction of nitrogen atom with α-uranium: From surface adsorption to bulk diffusion

    NASA Astrophysics Data System (ADS)

    Su, Qiulei; Deng, Huiqiu; Ao, Bingyun; Xiao, Shifang; Li, Xiaofan; Chen, Piheng; Hu, Wangyu

    2014-04-01

    Experimental studies of nitriding on uranium surfaces show that the modified layers provide considerable protection against air corrosion. The bimodal distribution of nitrogen is affected by both its implantation and diffusion, and the diffusion of nitrogen during implantation is also governed by vacancy trapping. In the present paper, nitrogen adsorption, absorption, diffusion, and vacancy trapping on the surface of and in the bulk of α-uranium are studied with a first-principles density functional theory approach and the climbing image nudged elastic band method. The calculated results indicate that, regardless of the nitrogen coverage, a nitrogen atom prefers to reside at the hollow1 site and octahedral (Oct) site on and below the surface, respectively. The lowest energy barriers for on-surface and penetration diffusion occur at a coverage of 1/2 monolayer. A nitrogen atom prefers to occupy the Oct site in bulk α-uranium. High energy barriers are observed during the diffusion between neighboring Oct sites. A vacancy can capture its nearby interstitial nitrogen atom with a low energy barrier, providing a significant attractive nitrogen-vacancy interaction at the trapping center site. This study provides a reference for understanding the nitriding process on uranium surfaces.

  3. Environmental site description for a Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) production plant at the Paducah Gaseous Diffusion Plant site

    SciTech Connect

    Marmer, G.J.; Dunn, C.P.; Moeller, K.L.; Pfingston, J.M.; Policastro, A.J.; Yuen, C.R.; Cleland, J.H.

    1991-09-01

    Uranium enrichment in the United States has utilized a diffusion process to preferentially enrich the U-235 isotope in the uranium product. The U-AVLIS process is based on electrostatic extraction of photoionized U-235 atoms from an atomic vapor stream created by electron-beam vaporization of uranium metal alloy. The U-235 atoms are ionized when precisely tuned laser light -- of appropriate power, spectral, and temporal characteristics -- illuminates the uranium vapor and selectively photoionizes the U-235 isotope. A programmatic document for use in screening DOE site to locate a U-AVLIS production plant was developed and implemented in two parts. The first part consisted of a series of screening analyses, based on exclusionary and other criteria, that identified a reasonable number of candidate sites. These sites were subjected to a more rigorous and detailed comparative analysis for the purpose of developing a short list of reasonable alternative sites for later environmental examination. This environmental site description (ESD) provides a detailed description of the PGDP site and vicinity suitable for use in an environmental impact statement (EIS). The report is based on existing literature, data collected at the site, and information collected by Argonne National Laboratory (ANL) staff during a site visit. 65 refs., 15 tabs.

  4. The Effect of the Dose and Energy of a Pre-Silicide Implant on Nickel Silicide Formation

    SciTech Connect

    Rice, Jeffrey H.

    2008-11-03

    Pre-silicide implants have been used to increase the thermal stability of nickel silicide (NiSi) and to improve device performance. This study evaluates the effect of the dose, energy and species of a pre-silicide ion implant on NiSi phase formation. The resulting silicide was evaluated using sheet resistance, scanning electron Microscope (SEM) cross-sections, and Rutherford Backscattering Spectroscopy (RBS) analysis. It was found that a high dose argon implant will completely inhibit the silicide formation.

  5. Method for forming metallic silicide films on silicon substrates by ion beam deposition

    DOEpatents

    Zuhr, Raymond A.; Holland, Orin W.

    1990-01-01

    Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

  6. Synthesis and design of silicide intermetallic materials

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.; Park, Y.; Hollis, K.J.; Kung, H.H.

    1998-11-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries.

  7. Influence of instrument conditions on the evaporation behavior of uranium dioxide with UV laser-assisted atom probe tomography

    SciTech Connect

    Valderrama, B.; Henderson, H.B.; Gan, J.; Manuel, M.V.

    2015-04-01

    Atom probe tomography (APT) provides the ability to detect subnanometer chemical variations spatially, with high accuracy. However, it is known that compositional accuracy can be affected by experimental conditions. A study of the effect of laser energy, specimen base temperature, and detection rate is performed on the evaporation behavior of uranium dioxide (UO2). In laser-assisted mode, tip geometry and standing voltage also contribute to the evaporation behavior. In this investigation, it was determined that modifying the detection rate and temperature did not affect the evaporation behavior as significantly as laser energy. It was also determined that three laser evaporation regimes are present in UO2. Very low laser energy produces a behavior similar to DC-field evaporation, moderate laser energy produces the desired laser-assisted field evaporation characteristic and high laser energy induces thermal effects, negatively altering the evaporation behavior. The need for UO2 to be analyzed under moderate laser energies to produce accurate stoichiometry distinguishes it from other oxides. The following experimental conditions providing the best combination of mass resolving power, accurate stoichiometry, and uniform evaporation behavior: 50 K, 10 pJ laser energy, a detection rate of 0.003 atoms per pulse, and a 100 kHz repetition rate.

  8. The effect of uranium on bacterial viability and cell surface morphology using atomic force microscopy in the presence of bicarbonate ions

    SciTech Connect

    Sepulveda-Medina, Paola; Katsenovich, Yelena; Musaramthota, Vishal; Lee, Michelle; Lee, Brady; Dua, Rupak; Lagos, Leonel

    2015-06-01

    Nuclear production facilities during the Cold War have caused liquid waste to leak and soak into the ground creating multiple radionuclide plumes. The Arthrobacter bacteria are one of the most common groups in soils and are found in large numbers in subsurface environments contaminated with radionuclides. This study experimentally analyzed changes on the bacteria surface after uranium exposure and evaluated the effect of bicarbonate ions on U(VI) toxicity of a less uranium tolerant Arthrobacter strain, G968, by investigating changes in adhesion forces and cells dimensions via atomic force microscopy (AFM). AFM and viability studies showed that samples containing bicarbonate are able to acclimate and withstand uranium toxicity. Samples containing no bicarbonate exhibited deformed surfaces and a low height profile, which might be an indication that the cells are not alive.

  9. Effect of silicide/silicon hetero-junction structure on thermal conductivity and Seebeck coefficient.

    PubMed

    Choi, Wonchul; Park, Young-Sam; Hyun, Younghoon; Zyung, Taehyoung; Kim, Jaehyeon; Kim, Soojung; Jeon, Hyojin; Shin, Mincheol; Jang, Moongyu

    2013-12-01

    We fabricated a thermoelectric device with a silicide/silicon laminated hetero-structure by using RF sputtering and rapid thermal annealing. The device was observed to have Ohmic characteristics by I-V measurement. The temperature differences and Seebeck coefficients of the proposed silicide/silicon laminated and bulk structure were measured. The laminated thermoelectric device shows suppression of heat flow from the hot to cold side. This is supported by the theory that the atomic mass difference between silicide and silicon creates a scattering center for phonons. The major impact of our work is that phonon transmission is suppressed at the interface between silicide and silicon without degrading electrical conductivity. The estimated thermal conductivity of the 3-layer laminated device is 126.2 +/- 3.7 W/m. K. Thus, by using the 3-layer laminated structure, thermal conductivity is reduced by around 16% compared to bulk silicon. However, the Seebeck coefficient of the thermoelectric device is degraded compared to that of bulk silicon. It is understood that electrical conductivity is improved by using silicide as a scattering center.

  10. Tuning magnetic response of epitaxial iron-silicide nanoislands by controlled self-assembled growth

    NASA Astrophysics Data System (ADS)

    Goldfarb, I.; Camus, Y.; Dascalu, M.; Cesura, F.; Chalasani, R.; Kohn, A.

    2017-07-01

    We investigated the dependence of the magnetic response from epitaxial Si-rich iron-silicide nanostructures on their geometry. By varying substrate orientation and deposition parameters, we altered the growth kinetics and the lattice matching conditions at the silicide/silicon interface. These affected the silicide nanoisland crystal structure, size, shape, and proximity due to spatial ordering and, consequently, their magnetic response in terms of shape and opening of the respective hysteresis loops. In particular, we demonstrated correlation between magnetic anisotropy, expressed as the hysteresis coercive field, and the nanoisland spatial length-to-width aspect ratio. This correlation is explained by the contribution of undercoordinated island edge atoms to the overall measured magnetic behavior of the nanoisland arrays. Further, the island self-ordering along periodic surface steps adds dipolar interactions between the otherwise superparamagnetic nanoislands, consequently resulting in a magnetic response resembling that of a superspin glass.

  11. Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

    SciTech Connect

    Das, Debolina; Mahato, J. C.; Bisi, Bhaskar; Dev, B. N.; Satpati, B.

    2014-11-10

    Iron silicide (cubic FeSi{sub 2}) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi{sub 2} nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along their edges.

  12. Epitaxial titanium silicide islands and nanowires

    NASA Astrophysics Data System (ADS)

    He, Zhian; Stevens, M.; Smith, David J.; Bennett, P. A.

    2003-02-01

    The growth of titanium silicide islands formed by reactive deposition of Ti on Si(1 1 1) at T˜850 °C has been studied using atomic force microscopy and transmission electron microscopy. The predominant shape is very long and narrow, and can be considered to be a nanowire (NW). Other flat-topped structures coexist with the NWs, including small equilateral triangles and large rectangular plates. Most NWs are oriented along Si <2 2 0> directions, with typical dimensions 20 nm wide, 10 nm high and several microns long. A minority of NWs are oriented along Si <2 2 4> . These latter tend to break up into chains of small segments with regular size and spacing. Growth at lower temperature or higher deposition rate results in smaller and more numerous NWs. Length appears to be limited by intersection with other NWs oriented 120° apart. The junction between NWs appears to be incoherent in most cases. The triangular islands are positively identified as fully relaxed C54 TiSi 2, while the chains are relaxed C49 TiSi 2. The dominant NW structure is incommensurate and is tentatively identified as C49 TiSi 2.

  13. Silicide-phase evolution and platinum redistribution during silicidation of Ni0.95Pt0.05/Si(100) specimens

    NASA Astrophysics Data System (ADS)

    Adusumilli, Praneet; Seidman, David N.; Murray, Conal E.

    2012-09-01

    We investigated the temporal evolution of nickel-silicide phase-formation and the simultaneous redistribution of platinum during silicidation of a 10 nm thick Ni0.95Pt0.05 film on a Si(100) substrate. Grazing incidence x-ray diffraction (GIXRD) and atom-probe tomography (APT) measurements were performed on as-deposited films and after rapid thermal annealing (RTA) at 320 or 420 °C for different times. Observation of the Ni2Si phase in as-deposited films, both with and without platinum alloying, is attributed to surface preparation. RTA at 320 °C for 5 s results in the formation of the low-resistivity NiSi intermetallic phase and nickel-rich phases, Ni2Si and Ni3Si2, as demonstrated by GIXRD measurements. At 420 °C for 5 s, the NiSi phase grows outward from the silicide/Si(100) interface by consuming the nickel-rich silicide phases. On increasing the annealing time at 420 °C to 30 min, this reaction is driven towards completion. The nickel-silicide/silicon interface is reconstructed in three-dimensions employing APT and its chemical root-mean-square roughness, based on a silicon isoconcentration surface, decreases to 0.6 nm with the formation of the NiSi phase during silicidation. Pt redistribution is affected by the simultaneous reaction between Ni and Si during silicidation, and it influences the resulting microstructure and thermal stability of the NiSi phase. Short-circuit diffusion of Pt via grain boundaries in NiSi is observed, which affects the resultant grain size, morphology, and possibly the preferred orientation of the NiSi grains. Pt segregates at the NiSi/Si(100) heterophase interface and may be responsible for the morphological stabilization of NiSi against agglomeration to temperatures greater than 650 °C. The Gibbsian interfacial excess of Pt at the NiSi/Si(100) interface after RTA at 420 °C for 5 s is 1.2 ± 0.01 atoms nm-2 and then increases to 2.1 ± 0.02 atoms nm-2 after 30 min at 420 °C, corresponding to a decrease in the interfacial free

  14. Ensuring the Consistency of Silicide Coatings

    NASA Technical Reports Server (NTRS)

    Ramani, V.; Lampson, F. K.

    1982-01-01

    Diagram specifies optimum fusing time for given thicknesses of refractory metal-silicide coatings on columbium C-103 substrates. Adherence to indicated fusion times ensures consistent coatings and avoids underdiffusion and overdiffusion. Accuracy of diagram has been confirmed by tests.

  15. Synthesis and Design of Silicide Intermetallic Materials

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Vaidya, R.U.; Park, Y.

    1999-05-14

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the US processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive US processing industries. The program presently has a number of industrial connections, including a CRADA with Johns Manville Corporation targeted at the area of MoSi{sub 2}-based high temperature materials for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. With the Exotherm Corporation, they are developing advanced silicide powders for the fabrication of silicide materials with tailored and improved properties for industrial applications. In October 1998, the authors initiated a new activity funded by DOE/OIT on ``Molybdenum Disilicide Composites for Glass Processing Sensors''. With Accutru International Corporation, they are developing silicide-based protective sheaths for self-verifying temperature sensors which may be used in glass furnaces and other industrial applications. With Combustion Technology Inc., they are developing silicide-based periscope sight tubes for the direct observation of glass melts.

  16. Large hysteretic magnetoresistance of silicide nanostructures

    NASA Astrophysics Data System (ADS)

    Kim, T.; Naser, B.; Chamberlin, R. V.; Schilfgaarde, M. V.; Bennett, P. A.; Bird, J. P.

    2007-11-01

    We demonstrate a large (as much as 100%) and strongly hysteretic magnetoresistance (MR) in nominally nonferromagnetic silicide films and nanowires. This unusual MR is quenched above a few kelvins, where conventional behavior due to weak antilocalization is recovered. The dynamic characteristics of this effect are suggestive of weakly interacting, localized paramagnetic moments that form at the surface oxide of the silicide nanostructures, with dramatic consequences for transport when the system size is reduced to the nanoscale.

  17. Metrology Of Silicide Contacts For Future CMOS

    NASA Astrophysics Data System (ADS)

    Zollner, Stefan; Gregory, Richard B.; Kottke, M. L.; Vartanian, Victor; Wang, Xiang-Dong; Theodore, David; Fejes, P. L.; Conner, J. R.; Raymond, Mark; Zhu, Xiaoyan; Denning, Dean; Bolton, Scott; Chang, Kyuhwan; Noble, Ross; Jahanbani, Mohamad; Rossow, Marc; Goedeke, Darren; Filipiak, Stan; Garcia, Ricardo; Jawarani, Dharmesh; Taylor, Bill; Nguyen, Bich-Yen; Crabtree, P. E.; Thean, Aaron

    2007-09-01

    Silicide materials (NiSi, CoSi2, TiSi2, etc) are used to form low-resistance contacts between the back-end (W plugs and Cu interconnects) and front-end portions (silicon source, drain, and gate regions) of integrated CMOS circuits. At the 65 nm node, a transition from CoSi2 to NiSi was necessary because of the unique capability of NiSi to form narrow silicide nanowires on active (monocrystalline) and gate (polycrystalline) lines. Like its predecessors TiSi2 and CoSi2, NiSi is a mid-gap silicide, i.e., the Fermi level of the NiSi metal is pinned half-way between the conduction and valence band edges in silicon. This leads to a Schottky barrier between the silicide and silicon source-drain regions, which creates undesirable parasitic resistances. For future CMOS generations, band-edge silicides, such as PtSi for contacts to p-type or rare earth silicides for contacts to n-type Si will be needed. This paper reviews metrology and characterization techniques for NiSi process control for development and manufacturing, with special emphasis on x-ray reflectance and x-ray fluorescence. We also report measurement methods useful for development of a PtSi PMOS module.

  18. Self-organized growth and magnetic properties of epitaxial silicide nanoislands

    NASA Astrophysics Data System (ADS)

    Tripathi, J. K.; Levy, R.; Camus, Y.; Dascalu, M.; Cesura, F.; Chalasani, R.; Kohn, A.; Markovich, G.; Goldfarb, I.

    2017-01-01

    Self-organized transition-metal (Ni and Fe) and rare-earth (Er) silicide nanostructures were grown on Si(1 1 1) and Si(0 0 1) surfaces under low coverage conditions, in a ;solid phase; and ;reactive deposition; epitaxial regimes. Island evolution was continuously monitored in-situ, using real-time scanning tunneling microscopy and surface electron diffraction. After anneal of a Ni/Si(1 1 1) surface at 700 °C, we observed small hemispherical Ni-silicide nanoislands ∼10 nm in diameter decorating surface steps in a self-ordered fashion and pinning them. Fe-silicide nanoislands formed after a 550 °C anneal of a Fe-covered surface, were also self-ordered along the surface step-bunches, however were significantly larger (∼70 × 10 nm) and exhibited well-developed three-dimensional polyhedral shapes. Ni-silicide islands were sparsely distributed, separated by about ∼100 nm from one another, on average, whereas Fe-silicide islands were more densely packed, with only ∼50 nm mean separation distance. In spite of the above differences between both types of island in size, shape, and number density, the self-ordering in both cases was close to ideal, with practically no islands nucleated on terraces. Superconducting quantum interference device magnetometry showed considerable superparamagnetism, in particular in Fe-silicide islands with ∼1.9 μB/Fe atom, indicating stronger ferromagnetic coupling of individual magnetic moments, contrary to Ni-silicide islands with the calculated moments of only ∼ 0.5μB /Ni atom. To elucidate the effects of the island size, shape, and lateral ordering on the measured magnetic response, we have controllably changed the island morphology by varying deposition methods and conditions and even using differently oriented Si substrates. We have also begun experimenting with rare-earth silicide islands. In the forthcoming experiments we intend to compare the magnetic response of these variously built and composed islands and correlate

  19. Uranium Adsorbent Fibers Prepared by Atom-Transfer Radical Polymerization (ATRP) from Poly(vinyl chloride)- co -chlorinated Poly(vinyl chloride) (PVC- co -CPVC) Fiber

    DOE PAGES

    Brown, Suree; Yue, Yanfeng; Kuo, Li-Jung; ...

    2016-03-11

    The need to secure future supplies of energy attracts researchers in several countries to a vast resource of nuclear energy fuel: uranium in seawater (estimated at 4.5 billion tons in seawater). In this study, we developed effective adsorbent fibers for the recovery of uranium from seawater via atom-transfer radical polymerization (ATRP) from a poly-(vinyl chloride)-co-chlorinated poly(vinyl chloride) (PVC-co-CPVC) fiber. ATRP was employed in the surface graft polymerization of acrylonitrile (AN) and tert-butyl acrylate (tBA), precursors for uranium-interacting functional groups, from PVC-co-CPVC fiber. The [tBA]/[AN] was systematically varied to identify the optimal ratio between hydrophilic groups (from tBA) and uranyl-binding ligandsmore » (from AN). The best performing adsorbent fiber, the one with the optimal [tBA]/[AN] ratio and a high degree of grafting (1390%), demonstrated uranium adsorption capacities that are significantly greater than those of the Japan Atomic Energy Agency (JAEA) reference fiber in natural seawater tests (2.42 3.24 g/kg in 42 days of seawater exposure and 5.22 g/kg in 49 days of seawater exposure, versus 1.66 g/kg in 42 days of seawater exposure and 1.71 g/kg in 49 days of seawater exposure for JAEA). Lastly, adsorption of other metal ions from seawater and their corresponding kinetics were also studied. The grafting of alternative monomers for the recovery of uranium from seawater is now under development by this versatile technique of ATRP.« less

  20. METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES

    DOEpatents

    Bowman, M.G.; Krikorian, N.H.

    1961-10-01

    A method is described for forming a non-corrosive silicide coating on tantalum. The coating is made through the heating of trirhenium silicides in contact with the tantalum object to approximately 1400 deg C at which temperature trirhenium silicide decomposes into rhenium and gaseous silicons. The silicon vapor reacts with the tantalum surface to form a tantalum silicide layer approximately 10 microns thick. (AEC)

  1. The effect of uranium on bacterial viability and cell surface morphology using atomic force microscopy in the presence of bicarbonate ions.

    PubMed

    Sepulveda-Medina, Paola; Katsenovich, Yelena; Musaramthota, Vishal; Lee, Michelle; Lee, Brady; Dua, Rupak; Lagos, Leonel

    2015-06-01

    Past disposal practices at nuclear production facilities have led to the release of liquid waste into the environment creating multiple radionuclide plumes. Microorganisms are known for the ability to interact with radionuclides and impact their mobility in soils and sediments. Gram-positive Arthrobacter sp. are one of the most common bacterial groups in soils and are found in large numbers in subsurface environments contaminated with radionuclides. This study experimentally analyzed changes on the bacteria surface at the nanoscale level after uranium exposure and evaluated the effect of aqueous bicarbonate ions on U(VI) toxicity of a low uranium-tolerant Arthrobacter oxydans strain G968 by investigating changes in adhesion forces and cell dimensions via atomic force microscopy (AFM). Experiments were extended to assess cell viability by the Live/Dead BacLight Bacterial Viability Kit (Molecular Probes) and quantitatively illustrate the effect of uranium exposure in the presence of varying concentrations of bicarbonate ions. AFM and viability studies showed that samples containing bicarbonate were able to withstand uranium toxicity and remained viable. Samples containing no bicarbonate exhibited deformed surfaces and a low height profile, which, in conjunction with viability studies, indicated that the cells were not viable. Copyright © 2015 Institut Pasteur. All rights reserved.

  2. A poly(acrylonitrile)-functionalized porous aromatic framework synthesized by atom-transfer radical polymerization for the extraction of uranium from seawater

    SciTech Connect

    Yue, Yanfeng; Zhang, Chenxi; Tang, Qing; Mayes, Richard T.; Liao, Wei -Po; Liao, Chen; Tsouris, Costas; Stankovich, Joseph J.; Chen, Jihua; Hensley, Dale K.; Abney, Carter W.; Jiang, De-en; Brown, Suree; Dai, Sheng

    2015-10-30

    In order to ensure a sustainable reserve of fuel for nuclear power generation, tremendous research efforts have been devoted to developing advanced sorbent materials for extracting uranium from seawater. In this work, a porous aromatic framework (PAF) was surface-functionalized with poly(acrylonitrile) through atom-transfer radical polymerization (ATRP). Batches of this adsorbent were conditioned with potassium hydroxide (KOH) at room temperature or 80 °C prior to contact with a uranium-spiked seawater simulant, with minimal differences in uptake observed as a function of conditioning temperature. A maximum capacity of 4.81 g-U/kg-ads was obtained following 42 days contact with uranium-spiked filtered environmental seawater, which demonstrates a comparable adsorption rate. A kinetic investigation revealed extremely rapid uranyl uptake, with more than 80% saturation reached within 14 days. Furthermore, relying on the semiordered structure of the PAF adsorbent, density functional theory (DFT) calculations reveal cooperative interactions between multiple adsorbent groups yield a strong driving force for uranium binding.

  3. A poly(acrylonitrile)-functionalized porous aromatic framework synthesized by atom-transfer radical polymerization for the extraction of uranium from seawater

    DOE PAGES

    Yue, Yanfeng; Zhang, Chenxi; Tang, Qing; ...

    2015-10-30

    In order to ensure a sustainable reserve of fuel for nuclear power generation, tremendous research efforts have been devoted to developing advanced sorbent materials for extracting uranium from seawater. In this work, a porous aromatic framework (PAF) was surface-functionalized with poly(acrylonitrile) through atom-transfer radical polymerization (ATRP). Batches of this adsorbent were conditioned with potassium hydroxide (KOH) at room temperature or 80 °C prior to contact with a uranium-spiked seawater simulant, with minimal differences in uptake observed as a function of conditioning temperature. A maximum capacity of 4.81 g-U/kg-ads was obtained following 42 days contact with uranium-spiked filtered environmental seawater, whichmore » demonstrates a comparable adsorption rate. A kinetic investigation revealed extremely rapid uranyl uptake, with more than 80% saturation reached within 14 days. Furthermore, relying on the semiordered structure of the PAF adsorbent, density functional theory (DFT) calculations reveal cooperative interactions between multiple adsorbent groups yield a strong driving force for uranium binding.« less

  4. Milestone report on MD potential development for uranium silicide

    SciTech Connect

    Yu, Jianguo; Zhang, Yongfeng; Hales, Jason Dean

    2016-03-01

    This report summarizes the progress on the interatomic potential development of triuranium-disilicide (U3Si2) for molecular dynamics (MD) simulations. The development is based on the Tersoff type potentials for single element U and Si. The Si potential is taken from the literature and a Tersoff type U potential is developed in this project. With the primary focus on the U3Si2 phase, some other U-Si systems such as U3Si are also included as a test of the transferability of the potentials for binary U-Si phases. Based on the potentials for unary U and Si, two sets of parameters for the binary U-Si system are developed using the Tersoff mixing rules and the cross-term fitting, respectively. The cross-term potential is found to give better results on the enthalpy of formation, lattice constants and elastic constants than those produced by the Tersoff mixing potential, with the reference data taken from either experiments or density functional theory (DFT) calculations. In particular, the results on the formation enthalpy and lattice constants for the U3Si2 phase and lattice constants for the high temperature U3Si (h-U3Si) phase generated by the cross-term potential agree well with experimental data. Reasonable agreements are also reached on the elastic constants of U3Si2, on the formation enthalpy for the low temperature U3Si (m-U3Si) and h-U3Si phases, and on the lattice constants of m-U3Si phase. All these phases are predicted to be mechanically stable. The unary U potential is tested for three metallic U phases (α, β, γ). The potential is found capable to predict the cohesive energies well against experimental data for all three phases. It matches reasonably with previous experiments on the lattice constants and elastic constants of αU.

  5. Phase transformations in ion-irradiated silicides

    NASA Technical Reports Server (NTRS)

    Hewett, C. A.; Lau, S. S.; Suni, I.; Hung, L. S.

    1985-01-01

    The present investigation has three objectives. The first is concerned with the phase transformation of CoSi2 under ion implantation and the subsequent crystallization characteristics during annealing, taking into account epitaxial and nonepitaxial recrystallization behavior. The second objective is related to a study of the general trend of implantation-induced damage and crystallization behavior for a number of commonly used silicides. The last objective involves a comparison of the recrystallization behavior of cosputtered refractory silicides with that of the ion-implanted silicides. It was found that epitaxial regrowth of ion-irradiated CoSi2 occurred for samples with an epitaxial seed left at the Si/CoSi2 interface. A structural investigation of CoSi2 involving transmission electron microscopy (TEM) showed that after high-dose implantation CoSi2 is amorphous.

  6. Silicene-type Surface Reconstruction on C40 Hexagonal Silicides

    NASA Astrophysics Data System (ADS)

    Volders, Cameron; Reinke, Petra

    Silicene has emerged as the next two-dimensional material possessing a Dirac type electronic structure making it a prime candidate for integration in electronic devices. The study of silicene is relatively new and many aspects have yet to be fully understood. Here we present a scanning tunneling microscopy (STM) study of a Silicene-type surface reconstruction observed on nanometer scale hexagonal-MoSi2 crystallites. This surface reconstruction is specific to the C40 structure of h-MoSi2 and can initially be defined as a geometric silicene while the coupling between the silicene surface and the silicide bulk is under investigation. The lateral dimensions correspond to a superstructure where the silicene hexagons are slightly buckled and two of the six Si atoms are visible in the STM images creating a honeycomb pattern. The local electronic structure of the silicene is currently being studied with ST spectroscopy and the impact of confinement will be addressed. These results open an alternative route to Silicene growth by using surface reconstructions on metallic and semiconducting C40 silicide structures, which is promising for direct device integration on Si-platforms.

  7. Determination of trace elements in uranium by inductively coupled plasma-atomic emission spectrometry using Kalman filtering

    SciTech Connect

    Veen, E.H. van; de Loos-Vollebregt, T.C. de; Wassink, A.P.; Kalter, H.

    1992-08-01

    Trace impurities in uranium hexafluoride were analyzed by ICP-AES. The data were reduced using a Kalman filtering technique. Normally, multiple extraction steps are required for this analysis using conventional ICP-AES.

  8. ZPR-3 Assembly 6F : A spherical assembly of highly enriched uranium, depleted uranium, aluminum and steel with an average {sup 235}U enrichment of 47 atom %.

    SciTech Connect

    Lell, R. M.; McKnight, R. D; Schaefer, R. W.; Nuclear Engineering Division

    2010-09-30

    Over a period of 30 years, more than a hundred Zero Power Reactor (ZPR) critical assemblies were constructed at Argonne National Laboratory. The ZPR facilities, ZPR-3, ZPR-6, ZPR-9 and ZPPR, were all fast critical assembly facilities. The ZPR critical assemblies were constructed to support fast reactor development, but data from some of these assemblies are also well suited for nuclear data validation and to form the basis for criticality safety benchmarks. A number of the Argonne ZPR/ZPPR critical assemblies have been evaluated as ICSBEP and IRPhEP benchmarks. Of the three classes of ZPR assemblies, engineering mockups, engineering benchmarks and physics benchmarks, the last group tends to be most useful for criticality safety. Because physics benchmarks were designed to test fast reactor physics data and methods, they were as simple as possible in geometry and composition. The principal fissile species was {sup 235}U or {sup 239}Pu. Fuel enrichments ranged from 9% to 95%. Often there were only one or two main core diluent materials, such as aluminum, graphite, iron, sodium or stainless steel. The cores were reflected (and insulated from room return effects) by one or two layers of materials such as depleted uranium, lead or stainless steel. Despite their more complex nature, a small number of assemblies from the other two classes would make useful criticality safety benchmarks because they have features related to criticality safety issues, such as reflection by soil-like material. ZPR-3 Assembly 6 consisted of six phases, A through F. In each phase a critical configuration was constructed to simulate a very simple shape such as a slab, cylinder or sphere that could be analyzed with the limited analytical tools available in the 1950s. In each case the configuration consisted of a core region of metal plates surrounded by a thick depleted uranium metal reflector. The average compositions of the core configurations were essentially identical in phases A - F. ZPR-3

  9. Synthesis and design of silicide intermetallic materials

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.

    1997-04-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries. The program presently has a number of developing industrial connections, including a CRADA with Schuller International Inc. targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. Current experimental emphasis is on the development and characterization of MoSi{sub 2}-Si{sub 3}N{sub 4} and MoSi{sub 2}-SiC composites, the plasma spraying of MoSi{sub 2}-based materials, and the joining of MoSi{sub 2} materials to metals.

  10. Chromium silicide formation by ion mixing

    NASA Technical Reports Server (NTRS)

    Shreter, U.; So, F. C. T.; Nicolet, M.-A.

    1984-01-01

    The formation of CrSi2 by ion mixing was studied as a function of temperature, silicide thickness and irradiated interface. Samples were prepared by annealing evaporated couples of Cr on Si and Si on Cr at 450 C for short times to form Si/CrSi2/Cr sandwiches. Xenon beams with energies up to 300 keV and fluences up to 8 x 10 to the 15th per sq cm were used for mixing at temperatures between 20 and 300 C. Penetrating only the Cr/CrSi2 interface at temperatures above 150 C induces further growth of the silicide as a uniform stoichiometric layer. The growth rate does not depend on the thickness of the initially formed silicide at least up to a thickness of 150 nm. The amount of growth depends linearly on the density of energy deposited at the interface. The growth is temperature dependent with an apparent activation energy of 0.2 eV. Irradiating only through the Si/CrSi2 interface does not induce silicide growth. It is concluded that the formation of CrSi2 by ion beam mixing is an interface-limited process and that the limiting reaction occurs at the Cr/CrSi2 interface.

  11. Chromium silicide formation by ion mixing

    NASA Technical Reports Server (NTRS)

    Shreter, U.; So, F. C. T.; Nicolet, M.-A.

    1984-01-01

    The formation of CrSi2 by ion mixing was studied as a function of temperature, silicide thickness and irradiated interface. Samples were prepared by annealing evaporated couples of Cr on Si and Si on Cr at 450 C for short times to form Si/CrSi2/Cr sandwiches. Xenon beams with energies up to 300 keV and fluences up to 8 x 10 to the 15th per sq cm were used for mixing at temperatures between 20 and 300 C. Penetrating only the Cr/CrSi2 interface at temperatures above 150 C induces further growth of the silicide as a uniform stoichiometric layer. The growth rate does not depend on the thickness of the initially formed silicide at least up to a thickness of 150 nm. The amount of growth depends linearly on the density of energy deposited at the interface. The growth is temperature dependent with an apparent activation energy of 0.2 eV. Irradiating only through the Si/CrSi2 interface does not induce silicide growth. It is concluded that the formation of CrSi2 by ion beam mixing is an interface-limited process and that the limiting reaction occurs at the Cr/CrSi2 interface.

  12. Challenges of nickel silicidation in CMOS technologies

    SciTech Connect

    Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet; Baumann, Frieder; Klymko, Nancy; Nummy, Karen; Sun, Bing; Jordan-Sweet, Jean; Yu, Jian; Zhu, Frank; Narasimha, Shreesh; Chudzik, Michael

    2015-04-01

    In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.

  13. Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

    SciTech Connect

    Escobedo-Cousin, Enrique; Vassilevski, Konstantin; Hopf, Toby; Wright, Nick; O'Neill, Anthony; Horsfall, Alton; Goss, Jonathan; Cumpson, Peter

    2013-03-21

    Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semi-insulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such as the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS, and atomic force microscopy. The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films. A simple model of diffusion-driven solid phase chemical reaction was used to explain formation of the FLG film at the interface between nickel silicide and silicon carbide.

  14. ZPR-3 Assembly 12 : A cylindrical assembly of highly enriched uranium, depleted uranium and graphite with an average {sup 235}U enrichment of 21 atom %.

    SciTech Connect

    Lell, R. M.; McKnight, R. D.; Perel, R. L.; Wagschal, J. J.; Nuclear Engineering Division; Racah Inst. of Physics

    2010-09-30

    Over a period of 30 years, more than a hundred Zero Power Reactor (ZPR) critical assemblies were constructed at Argonne National Laboratory. The ZPR facilities, ZPR-3, ZPR-6, ZPR-9 and ZPPR, were all fast critical assembly facilities. The ZPR critical assemblies were constructed to support fast reactor development, but data from some of these assemblies are also well suited for nuclear data validation and to form the basis for criticality safety benchmarks. A number of the Argonne ZPR/ZPPR critical assemblies have been evaluated as ICSBEP and IRPhEP benchmarks. Of the three classes of ZPR assemblies, engineering mockups, engineering benchmarks and physics benchmarks, the last group tends to be most useful for criticality safety. Because physics benchmarks were designed to test fast reactor physics data and methods, they were as simple as possible in geometry and composition. The principal fissile species was {sup 235}U or {sup 239}Pu. Fuel enrichments ranged from 9% to 95%. Often there were only one or two main core diluent materials, such as aluminum, graphite, iron, sodium or stainless steel. The cores were reflected (and insulated from room return effects) by one or two layers of materials such as depleted uranium, lead or stainless steel. Despite their more complex nature, a small number of assemblies from the other two classes would make useful criticality safety benchmarks because they have features related to criticality safety issues, such as reflection by soil-like material. ZPR-3 Assembly 12 (ZPR-3/12) was designed as a fast reactor physics benchmark experiment with an average core {sup 235}U enrichment of approximately 21 at.%. Approximately 68.9% of the total fissions in this assembly occur above 100 keV, approximately 31.1% occur below 100 keV, and essentially none below 0.625 eV - thus the classification as a 'fast' assembly. This assembly is Fast Reactor Benchmark No. 9 in the Cross Section Evaluation Working Group (CSEWG) Benchmark Specifications

  15. In situ real-time studies of nickel silicide phase formation

    NASA Astrophysics Data System (ADS)

    Tinani, Manisha

    2000-10-01

    Metal silicides have attracted considerable attention in recent years as low resistivity metal contact and interconnect materials in microelectronics. Historically, polycrystalline silicon has been used as the gate contact material. However, as device size decreases, the higher resistance of polycrystalline silicon can degrade device performance. Metal silicides provide low metal like resistivities and high temperature stability. Ideal silicides for practical applications need to have stable phases, low processing temperatures and mechanical compatibility with silicon, in order to reduce defects and roughness at the silicon-silicide interface. NiSi, one of the nickel silicide phases, fulfills all these criteria. It has a resistivity of 14muO-cm, and a large processing temperature window (350--750°C). NiSi actually surpasses other commonly used silicides such as COSi2 and TiSi2 1 in these properties, while avoiding problems generally faced with these silicides2. Prior to the use of NiSi, its formation mechanism must be understood. The objective of this research is to develop analytical procedures to monitor phase transformations, in our case NiSi, in real-time, using non-destructive techniques. To this end, we studied the formation of NiSi films on Si using Rutherford Backscattering spectrometry, atomic force microscopy, X-ray photoelectron spectroscopy, and real-time single wavelength and spectroscopic ellipsometry. Several nickel silicide phases (Ni2Si, NiSi, NiSi2), with different properties, form in various temperature ranges below 1000°C. Three phases, Ni2Si, NiSi, NiSi2, were identified in this temperature range, and their optical databases in the 2--4 eV range were established. We demonstrated that we can identify the phases and the extent of phase formation from optical data obtained via spectroscopic ellipsometry in real-time, and modeled the data using the optical databases established. We have also observed the onset of agglomeration of the silicide for

  16. Microwave absorption properties of Ni/(C, silicides) nanocapsules

    PubMed Central

    2012-01-01

    The microwave absorption properties of Ni/(C, silicides) nanocapsules prepared by an arc discharge method have been studied. The composition and the microstructure of the Ni/(C, silicides) nanocapsules were determined by means of X-ray diffraction, X-ray photoelectric spectroscopy, and transmission electron microscope observations. Silicides, in the forms of SiOx and SiC, mainly exist in the shells of the nanocapsules and result in a large amount of defects at the ‘core/shell’ interfaces as well as in the shells. The complex permittivity and microwave absorption properties of the Ni/(C, silicides) nanocapsules are improved by the doped silicides. Compared with those of Ni/C nanocapsules, the positions of maximum absorption peaks of the Ni/(C, silicides) nanocapsules exhibit large red shifts. An electric dipole model is proposed to explain this red shift phenomenon. PMID:22548846

  17. Simulated Fission Gas Behavior in Silicide Fuel at LWR Conditions

    SciTech Connect

    Miao, Yinbin; Mo, Kun; Yacout, Abdellatif; Harp, Jason

    2016-09-15

    As a promising candidate for the accident tolerant fuel (ATF) used in light water reactors (LWRs), the fuel performance of uranium silicide (U3Si2) at LWR conditions needs to be well-understood. However, existing experimental post-irradiation examination (PIE) data are limited to the research reactor conditions, which involve lower fuel temperature compared to LWR conditions. This lack of appropriate experimental data significantly affects the development of fuel performance codes that can precisely predict the microstructure evolution and property degradation at LWR conditions, and therefore evaluate the qualification of U3Si2 as an AFT for LWRs. Considering the high cost, long timescale, and restrictive access of the in-pile irradiation experiments, this study aims to utilize ion irradiation to simulate the inpile behavior of the U3Si2 fuel. Both in situ TEM ion irradiation and ex situ high-energy ATLAS ion irradiation experiments were employed to simulate different types of microstructure modifications in U3Si2. Multiple PIE techniques were used or will be used to quantitatively analyze the microstructure evolution induced by ion irradiation so as to provide valuable reference for the development of fuel performance code prior to the availability of the in-pile irradiation data.

  18. Crystal structure of the ternary silicide Gd2Re3Si5.

    PubMed

    Fedyna, Vitaliia; Kozak, Roksolana; Gladyshevskii, Roman

    2014-12-01

    A single crystal of the title compound, the ternary silicide digadolinium trirhenium penta-silicide, Gd2Re3Si5, was isolated from an alloy of nominal composition Gd20Re30Si50 synthesized by arc melting and investigated by X-ray single-crystal diffraction. Its crystal structure belongs to the U2Mn3Si5 structure type. All atoms in the asymmetric lie on special positions. The Gd site has site symmetry m..; the two Mn atoms have site symmetries m.. and 2.22; the three Si atoms have site symmetries m.., ..2 and 4.. . The coordination polyhedra of the Gd atoms have 21 vertices, while those of the Re atoms are cubo-octa-hedra and 13-vertex polyhedra. The Si atoms are arranged as tricapped trigonal prisms, bicapped square anti-prisms, or 11-vertex polyhedra. The crystal structure of the title compound is also related to the structure types CaBe2Ge2 and W5Si3. It can be represented as a stacking of Gd-centred polyhedra of composition [GdSi9]. The Re atoms form infinite chains with an Re-Re distance of 2.78163 (5) Å and isolated squares with an Re-Re distance of 2.9683 (6) Å.

  19. Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

    NASA Astrophysics Data System (ADS)

    Galkin, N. G.; Galkin, K. N.; Dotsenko, , S. A.; Goroshko, D. L.; Shevlyagin, A. V.; Chusovitin, E. A.; Chernev, I. M.

    2017-01-01

    By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS) with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

  20. Barrierless Cu-Ni-Mo Interconnect Films with High Thermal Stability Against Silicide Formation

    NASA Astrophysics Data System (ADS)

    Li, X. N.; Liu, L. J.; Zhang, X. Y.; Chu, J. P.; Wang, Q.; Dong, C.

    2012-12-01

    Cu-Ni-Mo alloys were investigated to increase thermal stability against silicide formation. The alloy compositions were chosen such that an insoluble element (Mo) solute was dissolved into Cu via a third element Ni which is soluble in both Cu and Ni. Thin-film Cu-Ni-Mo alloys were prepared by magnetron sputtering. The films with Mo/Ni ratio of 1/12 exhibited low electrical resistivities in combination with high thermal stabilities against silicide formation, in support of a tentative "cluster-plus-glue-atom" model for stable solid solutions. In particular, a (Mo1/13Ni12/13)0.3Cu99.7 sample reached a minimum resistivity of 2.6 μΩ cm after 400°C/1 h annealing and remained highly conductive with resistivities below 3 μΩ cm even after 400°C/40 h annealing. These alloys are promising candidates for future interconnect materials.

  1. Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

    NASA Astrophysics Data System (ADS)

    Galkin, N. G.; Galkin, K. N.; Dotsenko, , S. A.; Goroshko, D. L.; Shevlyagin, A. V.; Chusovitin, E. A.; Chernev, I. M.

    2016-12-01

    By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS) with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

  2. Uranium triamidoamine chemistry.

    PubMed

    Gardner, Benedict M; Liddle, Stephen T

    2015-07-07

    Triamidoamine (Tren) complexes of the p- and d-block elements have been well-studied, and they display a diverse array of chemistry of academic, industrial and biological significance. Such in-depth investigations are not as widespread for Tren complexes of uranium, despite the general drive to better understand the chemical behaviour of uranium by virtue of its fundamental position within the nuclear sector. However, the chemistry of Tren-uranium complexes is characterised by the ability to stabilise otherwise reactive, multiply bonded main group donor atom ligands, construct uranium-metal bonds, promote small molecule activation, and support single molecule magnetism, all of which exploit the steric, electronic, thermodynamic and kinetic features of the Tren ligand system. This Feature Article presents a current account of the chemistry of Tren-uranium complexes.

  3. Fusion silicide coatings for tantalum alloys.

    NASA Technical Reports Server (NTRS)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    Calculation of the performance of fusion silicide coatings under simulated atmospheric reentry conditions to a maximum temperature of 1810 K (2800 F). Both recently developed and commercially available coatings are included. Data are presented on oxidation rate with and without intentional defecting, the influence of the coatings on the ductile-brittle bend transition temperature, and the mechanical properties. Coatings appear capable of affording protection for at least 100 simulated cycles to 2600 F and 63 cycles to 2800 F.

  4. Environmental site description for a Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) production plant at the Oak Ridge Gaseous Diffusion Plant Site

    SciTech Connect

    Not Available

    1991-09-01

    In January 1990, the Secretary of Energy approved a plan for the demonstration and deployment of the Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) technology, with the near-term goal to provide the necessary information to make a deployment decision by November 1992. The U-AVLIS process is based on electrostatic extraction of photoionized U-235 atoms from an atomic vapor stream created by electron-beam vaporization of uranium metal alloy. A programmatic document for use in screening DOE sites to locate the U-AVLIS production plant was developed and implemented in two parts (Wolsko et al. 1991). The first part consisted of a series of screening analyses, based on exclusionary and other criteria, that identified a reasonable number of candidate sites. These sites were then subjected to a more rigorous and detailed comparative analysis for the purpose of developing a short list of reasonable alternative sites for later environmental examination. This environmental site description (ESD) provides a detailed description of the ORGDP site and vicinity suitable for use in an environmental impact statement (EIS). The report is based on existing literature, data collected at the site, and information collected by Argonne National Laboratory (ANL) staff during a site visit. The organization of the ESD is as follows. Topics addressed in Sec. 2 include a general site description and the disciplines of geology, water resources, biotic resources, air resources, noise, cultural resources, land use, socioeconomics, and waste management. Identification of any additional data that would be required for an EIS is presented in Sec. 3. Following the site description and additional data requirements, Sec. 4 provides a short, qualitative assessment of potential environmental issues. 37 refs., 20 figs., 18 tabs.

  5. ZPR-3 Assembly 11 : A cylindrical sssembly of highly enriched uranium and depleted uranium with an average {sup 235}U enrichment of 12 atom % and a depleted uranium reflector.

    SciTech Connect

    Lell, R. M.; McKnight, R. D.; Tsiboulia, A.; Rozhikhin, Y.; National Security; Inst. of Physics and Power Engineering

    2010-09-30

    Over a period of 30 years, more than a hundred Zero Power Reactor (ZPR) critical assemblies were constructed at Argonne National Laboratory. The ZPR facilities, ZPR-3, ZPR-6, ZPR-9 and ZPPR, were all fast critical assembly facilities. The ZPR critical assemblies were constructed to support fast reactor development, but data from some of these assemblies are also well suited for nuclear data validation and to form the basis for criticality safety benchmarks. A number of the Argonne ZPR/ZPPR critical assemblies have been evaluated as ICSBEP and IRPhEP benchmarks. Of the three classes of ZPR assemblies, engineering mockups, engineering benchmarks and physics benchmarks, the last group tends to be most useful for criticality safety. Because physics benchmarks were designed to test fast reactor physics data and methods, they were as simple as possible in geometry and composition. The principal fissile species was {sup 235}U or {sup 239}Pu. Fuel enrichments ranged from 9% to 95%. Often there were only one or two main core diluent materials, such as aluminum, graphite, iron, sodium or stainless steel. The cores were reflected (and insulated from room return effects) by one or two layers of materials such as depleted uranium, lead or stainless steel. Despite their more complex nature, a small number of assemblies from the other two classes would make useful criticality safety benchmarks because they have features related to criticality safety issues, such as reflection by soil-like material. ZPR-3 Assembly 11 (ZPR-3/11) was designed as a fast reactor physics benchmark experiment with an average core {sup 235}U enrichment of approximately 12 at.% and a depleted uranium reflector. Approximately 79.7% of the total fissions in this assembly occur above 100 keV, approximately 20.3% occur below 100 keV, and essentially none below 0.625 eV - thus the classification as a 'fast' assembly. This assembly is Fast Reactor Benchmark No. 8 in the Cross Section Evaluation Working Group

  6. Environmental site description for a Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) production plant at the Portsmouth Gaseous Diffusion Plant site

    SciTech Connect

    Marmer, G.J.; Dunn, C.P.; Filley, T.H.; Moeller, K.L.; Pfingston, J.M.; Policastro, A.J.; Cleland, J.H.

    1991-09-01

    Uranium enrichment in the United States has utilized a diffusion process to preferentially enrich the U-235 isotope in the uranium product. In the 1970s, the US Department of Energy (DOE) began investigating more efficient and cost-effective enrichment technologies. In January 1990, the Secretary of Energy approved a plan for the demonstration and deployment of the Uranium Atomic Vapor Laser isotope Separation (U-AVLIS) technology with the near-term goal to provide the necessary information to make a deployment decision by November 1992. Initial facility operation is anticipated for 1999. A programmatic document for use in screening DOE sites to locate a U-AVLIS production plant was developed and implemented in two parts. The first part consisted of a series of screening analyses, based on exclusionary and other criteria, that identified a reasonable number of candidate sites. The final evaluation, which included sensitivity studies, identified the Oak Ridge Gaseous Diffusion Plant (ORGDP) site, the Paducah Gaseous Diffusion Plant (PGDP) site, and the Portsmouth Gaseous Diffusion Plant (PORTS) site as having significant advantages over the other sites considered. This environmental site description (ESD) provides a detailed description of the PORTS site and vicinity suitable for use in an environmental impact statement (EIS). This report is based on existing literature, data collected at the site, and information collected by Argonne National Laboratory (ANL) staff during site visits. The organization of the ESD is as follows. Topics addressed in Sec. 2 include a general site description and the disciplines of geology, water resources, biotic resources, air resources, noise, cultural resources, land use. Socioeconomics, and waste management. Identification of any additional data that would be required for an EIS is presented in Sec. 3.

  7. Americium, plutonium and uranium contamination and speciation in well waters, streams and atomic lakes in the Sarzhal region of the Semipalatinsk Nuclear Test Site, Kazakhstan.

    PubMed

    León Vintró, L; Mitchell, P I; Omarova, A; Burkitbayev, M; Jiménez Nápoles, H; Priest, N D

    2009-04-01

    New data are reported on the concentrations, isotopic composition and speciation of americium, plutonium and uranium in surface and ground waters in the Sarzhal region of the Semipalatinsk Test Site, and an adjacent area including the settlement of Sarzhal. The data relate to filtered water and suspended particulate from (a) streams originating in the Degelen Mountains, (b) the Tel'kem 1 and Tel'kem 2 atomic craters, and (c) wells on farms located within the study area and at Sarzhal. The measurements show that (241)Am, (239,240)Pu and (238)U concentrations in well waters within the study area are in the range 0.04-87mBq dm(-3), 0.7-99mBq dm(-3), and 74-213mBq dm(-3), respectively, and for (241)Am and (239,240)Pu are elevated above the levels expected solely on the basis of global fallout. Concentrations in streams sourced in the Degelen Mountains are similar, while concentrations in the two water-filled atomic craters are somewhat higher. Suspended particulate concentrations in well waters vary considerably, though median values are very low, at 0.01mBq dm(-3), 0.08mBq dm(-3) and 0.32mBq dm(-3) for (241)Am, (239,240)Pu and (238)U, respectively. The (235)U/(238)U isotopic ratio in almost all well and stream waters is slightly elevated above the 'best estimate' value for natural uranium worldwide, suggesting that some of the uranium in these waters is of test-site provenance. Redox analysis shows that on average most of the plutonium present in the microfiltered fraction of these waters is in a chemically reduced form (mean 69%; 95% confidence interval 53-85%). In the case of the atomic craters, the proportion is even higher. As expected, all of the americium present appears to be in a reduced form. Calculations suggest that annual committed effective doses to individual adults arising from the daily ingestion of these well waters are in the range 11-42microSv (mean 21microSv). Presently, the ground water feeding these wells would not appear to be contaminated with

  8. Oxidation of Ti silicide surfaces

    NASA Astrophysics Data System (ADS)

    Cros, A.; Pirri, C.; Derrien, J.

    1985-04-01

    The oxidation of clean Ti suicide surface prepared under ultra high vacuum conditions, has been studied by ultraviolet and X-ray photo-emission spectroscopy techniques. At room temperature, the oxide overlayer is composed of both TiO 2 and SiO 2. An annealing at 400-600°C provokes the reduction of TiO 2 in the form of Ti suboxide while the liberated oxygen atoms bond to Si. This is not due to the presence of Si atoms and is rather an intrinsic property of native TiO 2. The simultaneous presence at high temperature of both SiO 2 and Ti suboxide is attributed to the existence of a rate limiting process due to diffusion barriers.

  9. Growth and characterization of self-assembled epitaxial transition-metal silicide nanowires

    NASA Astrophysics Data System (ADS)

    He, Zhian

    This dissertation involves the growth and microstructure characterization of self-assembled epitaxial silicide nanowires (NWs). It has been discovered that many metal/Si systems (Ti-Si(111), Dy/Si(110), Dy/Si(111), Co/Si(001), Co/Si(110), Co/Si(111), Ni/Si(111), Ni/Si(110), etc.) show self-assembled epitaxial silicide nanowire formation behavior during the ultra-high vacuum (UHV) reactive epitaxy process, in addition to the previously known rare-earth/Si(001) system. Most nanowires have dimensions of approximately 20 nm wide, 5 nm high and 1 um long. The dimensions and densities of the nanowires change considerably with growth temperature, deposition rate, and coverage. Transmission electron microscopy (TEM) reveals that most of these silicide nanowires are defect-free single crystals and form atomically flat interfaces with the Si substrate. Most silicide nanowires (COSi2/Si, NiSi2/Si(110), TiSi 2/Si(111) DYSi2/Si(110), etc.) grow into the Si substrate along inclined Si{111}, forming a V-shaped groove in the Si substrate. In several silicide nanowire systems (DySi2/Si(111), DySi2/S1(001), NiSi2/Si(111), etc.), however, the nanowires grow on top of the substrate. For these systems, the nanowires can be aligned to a single orientation using a stepped substrate. The growth mode (in-growth versus growth on top of the substrate surface) plays a significant role in the formation of nanowires and islands. Growth on the substrate usually produces islands that share the symmetry of the substrate in shape or in structure, whereas in-growth islands show less dependency on the surface symmetry (i.e. they adopt an asymmetric island shape and are less sensitive to surface steps). It has been proven that the silicides do not need to satisfy the requirement as specified in the "classic model" to form nanowires. A new nanowire formation mechanism is proposed in this work. This mechanism requires coherent growth of overlayer islands into the substrate along inclined close

  10. Formation, structure, and orientation of gold silicide on gold surfaces

    NASA Technical Reports Server (NTRS)

    Green, A. K.; Bauer, E.

    1976-01-01

    The formation of gold silicide on Au films evaporated onto Si(111) surfaces is studied by Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED). Surface condition, film thickness, deposition temperature, annealing temperature, and heating rate during annealing are varied. Several oriented crystalline silicide layers are observed.

  11. Initial development of high-temperature titanium silicide alloys

    SciTech Connect

    Liu, C.T.; Lee, E.H.; Henson, T.J.

    1988-01-01

    Mechanical and metallurgical properties of Ti/sub 5/Si/sub 3/ and its alloys were studied for the purpose of developing high-temperature silicides for structural use. Titanium silicides are extremely hard and brittle. Microcracks that formed transgranularly were observed in the silicide and its alloys, indicating a poor cleavage strength for Ti/sub 5/Si/sub 3/. Microalloying with boron and carbon gave no apparent beneficial effect. The tendency for cracking can be reduced by lowering the silicon content or by alloying with 2 to 4% Cr and 4% Zr. In particular, almost no cracks were observed in the alloy Ti-33Si-4Zr-4Cr (at. %). Titanium silicide has a hardness of 980 dph. The hardness shows a slight increase with zirconium additions and a decrease with chromium additions. Tensile tests indicate that the silicide and its alloys are brittle even at 1000/degree/C. All alloys fractured with a strength less than 100 MPa. Among the silicides tested, the alloys containing 4 to 8% Cr have better fracture strength. The fracture mode of the silicide alloys is mainly transgranular with a cleavage appearance. The silicides showed basically a parabolic oxidation rate at 800/degree/C, with an oxidation rate higher by an order of magnitude than that of nickel aluminides. 10 figs., 5 tabs.

  12. Raman scattering from rapid thermally annealed tungsten silicide

    NASA Technical Reports Server (NTRS)

    Kumar, Sandeep; Dasgupta, Samhita; Jackson, Howard E.; Boyd, Joseph T.

    1987-01-01

    Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.

  13. Formation, structure, and orientation of gold silicide on gold surfaces

    NASA Technical Reports Server (NTRS)

    Green, A. K.; Bauer, E.

    1976-01-01

    The formation of gold silicide on Au films evaporated onto Si(111) surfaces is studied by Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED). Surface condition, film thickness, deposition temperature, annealing temperature, and heating rate during annealing are varied. Several oriented crystalline silicide layers are observed.

  14. Raman scattering from rapid thermally annealed tungsten silicide

    NASA Technical Reports Server (NTRS)

    Kumar, Sandeep; Dasgupta, Samhita; Jackson, Howard E.; Boyd, Joseph T.

    1987-01-01

    Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.

  15. Electrothermal vaporization — inductively coupled plasma-atomic emission spectrometry for trace metal determination in uranium and thorium compounds without prior matrix separation

    NASA Astrophysics Data System (ADS)

    Purohit, Paru J.; Goyal, Neelam; Thulasidas, S. K.; Page, A. G.; Sastry, M. D.

    2000-08-01

    The electrothermal vaporization (ETV) mode of sample introduction into inductively coupled plasma (ICP) has been examined for its suitability for the analysis of trace metals in uranium and thorium compounds without prior chemical separation of the matrices using atomic emission spectrometry (AES). The ETV interfaced with an ICP torch adapted for glove box operation, has led to determination of sub-nanogram amounts of Al, Be, Ca, Cd, Co, Cr, Cu, Mg, Mn, Na, Ni, Zn, Dy, Eu, Gd and Sm using 10 μl of the sample aliquot containing 200 μg of U/Th matrix with a precision of 1-2%RSD. The results obtained here especially for rare earths in the presence of the matrix are of significance.

  16. Plasma-enhanced etching of tungsten, tungsten silicide, and molybdenum in chlorine-containing discharges

    SciTech Connect

    Fischl, D.S.

    1988-01-01

    Thin films of tungsten, tungsten silicide, and molybdenum were etched both within and downstream from Cl{sub 2} discharges. Without a discharge, molecular chlorine did not etch the films. Experimental conditions ranged from 0.1 to 1.0 Torr pressure, 30 to 180{degree}C electrode temperature, 0.2 to 1.0 W/cm{sup 2} power density, and 3 to 200 sccm flow rate. In-discharge etch rates varied from 10 to 90 nm/min for tungsten (W), 10 to 450 nm/min for tungsten silicide (WSi{sub x}), and 1 to 8 nm/min for molybdenum (Mo). Small additions of BCl{sub 3}, during W and WSi{sub x} etching, significantly increased the etch rates and improved the reproducibility. When samples were positioned downstream from a Cl{sub 2} discharge, etching proceeded solely by chemical reaction of the film with chlorine atoms. Downstream and in-plasma tungsten etch rates were approximately equal at 110{degree}C, but the chlorine atom etch rate dropped more rapidly than the in-plasma etch rate as temperature decreased. In contrast, molybdenum etched faster by atoms alone than in the plasma, although atom etching was not observed below 100{degree}C. Reactions of tungsten with a modulated beam of chlorine atoms and molecules were also studied.

  17. Thermal Stability of Magnesium Silicide/Nickel Contacts

    NASA Astrophysics Data System (ADS)

    de Boor, J.; Droste, D.; Schneider, C.; Janek, J.; Mueller, E.

    2016-10-01

    Magnesium silicide-based materials are a very promising class of thermoelectric materials with excellent potential for thermoelectric waste heat recovery. For the successful application of magnesium silicide-based thermoelectric generators, the development of long-term stable contacts with low contact resistance is as important as material optimization. We have therefore studied the suitability of Ni as a contact material for magnesium silicide. Co-sintering of magnesium silicide and Ni leads to the formation of a stable reaction layer with low electrical resistance. In this paper we show that the contacts retain their low electrical contact resistance after annealing at temperatures up to 823 K for up to 168 h. By employing scanning electron microscope analysis and time-of-flight (ToF)-secondary ion mass spectrometry, we can further show that elemental diffusion is occurring to a very limited extent. This indicates long-term stability under practical operation conditions for magnesium silicide/nickel contacts.

  18. Low-Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach.

    PubMed

    Lin, Tsung-Han; Margossian, Tigran; De Marchi, Michele; Thammasack, Maxime; Zemlyanov, Dmitry; Kumar, Sudhir; Jagielski, Jakub; Zheng, Li-Qing; Shih, Chih-Jen; Zenobi, Renato; De Micheli, Giovanni; Baudouin, David; Gaillardon, Pierre-Emmanuel; Copéret, Christophe

    2017-02-08

    The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this breakthrough, challenges toward high-performance devices have emerged on each significant step, such as the inhomogeneous coverage issue and thermal-induced short circuit issue of metal silicide formation. In this respect, we developed a two-step organometallic approach for nickel silicide formation under near-ambient temperature. Transmission electron and atomic force microscopy show the formation of a homogeneous and conformal layer of NiSix on pristine silicon surface. Post-treatment decreases the carbon content to a level similar to what is found for the original wafer (∼6%). X-ray photoelectron spectroscopy also reveals an increasing ratio of Si content in the layer after annealing, which is shown to be NiSi2 according to X-ray absorption spectroscopy investigation on a Si nanoparticle model. I-V characteristic fitting reveals that this NiSi2 layer exhibits a competitive Schottky barrier height of 0.41 eV and series resistance of 8.5 Ω, thus opening an alternative low-temperature route for metal silicide formation on advanced devices.

  19. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E.

    2004-09-28

    A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

  20. SOLVENT EXTRACTION OF URANIUM VALUES

    DOEpatents

    Feder, H.M.; Ader, M.; Ross, L.E.

    1959-02-01

    A process is presented for extracting uranium salt from aqueous acidic solutions by organic solvent extraction. It consists in contacting the uranium bearing solution with a water immiscible dialkylacetamide having at least 8 carbon atoms in the molecule. Mentioned as a preferred extractant is dibutylacetamide. The organic solvent is usually used with a diluent such as kerosene or CCl/sub 4/.

  1. Thermoelectric properties of higher manganese silicides

    NASA Astrophysics Data System (ADS)

    Tseng, Yu-Chih; Venkataraman, Vijay Shankar; Kee, Hae-Young

    2015-03-01

    Higher manganese silicides (HMS) are promising thermoelectric materials that may be broadly deployable because of the abundance of the constituent elements and their non-toxic nature. We study the thermoelectric properties of HMS using density functional theory calculations and tight-binding models to fit these calculations. We estimate charge carrier density and mobility, and compare with experimental data. Theoretically obtained thermal and electrical conductivities, and the Seebeck coefficients are presented. Possible scattering mechanisms and relations to figure of merit are also discussed. NSERC CREATE - HEATER Program.

  2. Miniaturized platinum silicide focal plane array camera

    NASA Astrophysics Data System (ADS)

    Landry, Joseph W.; Stetson, Norman B.

    1994-07-01

    With the introduction of the Inframetrics InfraCAM, a new standard is established for small, lightweight, low power, hand- held, high sensitivity, high resolution thermal imaging systems. A unique design approach to video processing as well as the compact and efficient Inframetrics patented Sterling cycle microcooler allow the unit to require less than 5 watts of power during operation. The unit is smaller than most commercially available `palm-corders' with both the sensor and processing electronics housed in the same package. This paper reviews both the architecture and performance of our 256 X 256 platinum silicide array based imager.

  3. Thermodynamic properties of higher lanthanum silicide

    SciTech Connect

    Polotskaya, R.I.

    1988-07-01

    The thermodynamic properties of lanthanum disilicide were examined for the first time in the 960-1050/sup 0/K range by measuring the electromotive force of a galvanic cell based on LaSn, the chlorides of potassium, sodium, and lanthanum, and lanthanum silicide and silicon. Reference electrodes were used to prevent lanthanum interaction with the electrolyte. The alloys were melted in an electric arc furnace in purified argon from lanthanum and silicon and followed by two-stage annealing. It was found that the resulting value of the enthalpy formation differed from the estimated value for lanthanum disilicide calculated by Miedema's model.

  4. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, A.J.; Akinc, M.

    1996-12-03

    A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

  5. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, A.J.; Akinc, M.

    1998-07-14

    A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

  6. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, A.J.; Akinc, M.

    1997-12-02

    A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

  7. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, Andrew J.; Akinc, Mufit

    1996-12-03

    A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

  8. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, Andrew J.; Akinc, Mufit

    1998-07-14

    A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

  9. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, Andrew J.; Akinc, Mufit

    1997-12-02

    A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

  10. Intercalation synthesis of graphene-capped iron silicide atop Ni(111): Evolution of electronic structure and ferromagnetic ordering

    NASA Astrophysics Data System (ADS)

    Grebenyuk, G. S.; Vilkov, O. Yu.; Rybkin, A. G.; Gomoyunova, M. V.; Senkovskiy, B. V.; Usachov, D. Yu.; Vyalikh, D. V.; Molodtsov, S. L.; Pronin, I. I.

    2017-01-01

    A new method for synthesis of graphene-protected iron silicides has been tested, which consists in formation of graphene on Ni(111) followed by two-step intercalation of the system with Fe and Si. Characterization of the samples was performed in situ by low-energy electron diffraction, angular-resolved photoelectron spectroscopy, core-level photoelectron spectroscopy with synchrotron radiation and magnetic linear dichroism in photoemission of Fe 3p electrons. It is shown, that at 400 °C the intercalation of graphene/Ni(111) with iron occurs in a range up to 14 ML. The graphene layer strongly interacts with the topmost Fe atoms and stabilizes the fcc structure of the film. The in-plane ferromagnetic ordering of the film has a threshold nature and arises after the intercalation of 5 ML Fe due to the thickness-driven spin reorientation transition. Subsequent intercalation of graphene/Fe/Ni(111) with Si leads to the formation of the inhomogeneous system consisted of intercalated and nonintercalated areas. The intercalated islands coalesce at 2 ML Si when a Fe-Si solid solution covered with the Fe3Si surface silicide is formed. The Fe3Si silicide is ferromagnetic and has an ordered (√3 × √3)R30° structure. The graphene layer is weakly electronically coupled to the silicide phase keeping its remarkable properties ready for use.

  11. Joule-assisted silicidation for short-channel silicon nanowire devices.

    PubMed

    Mongillo, Massimo; Spathis, Panayotis; Katsaros, Georgios; Gentile, Pascal; Sanquer, Marc; De Franceschi, Silvano

    2011-09-27

    We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes, and each contact was selectively silicided by means of the Joule effect. By a real-time monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel-silicide devices with controlled silicon channel length down to 8 nm.

  12. Determination of trace impurities in uranium, thorium and plutonium matrices by solvent extraction and inductively coupled plasma atomic emission spectrometry.

    PubMed

    Gopalkrishnan, M; Radhakrishnan, K; Dhami, P S; Kulkarni, V T; Joshi, M V; Patwardhan, A B; Ramanujam, A; Mathur, J N

    1997-02-01

    Studies on the determination of trace metallic impurities in nuclear materials such as uranium, thorium and plutonium are described. The bulk of the matrix is separated by batch extraction from their nitric acid solutions using 2-ethylhexyl hydrogen 2-ethylhexyl phosphonate (KSM-17, equivalent to PC88-A). The final aqueous phase containing the metallic impurities is fed to a high-temperature source inductively coupled plasma and the analysis is carried out employing a computer-controlled multichannel direct-reading spectrometer. The studies also included the recovery of impurities at various acidities and spectral interferences of the above matrices over the analyte elements. Based on the above studies, methods were standardized for the determination of 19 elements, viz. Al, B, Be, Ca, Cd, Cr, Cu, Fe, Mg, Mn, Ni, Pb, Si, Zn, Ce, Dy, Eu, Gd and Sm, in U/Th/Pu solutions. The relative standard deviation for various elements is in the range 1-5%.

  13. Formation of titanium silicides by high dose ion implantation

    NASA Astrophysics Data System (ADS)

    Salvi, V. P.; Vidwans, S. V.; Rangwala, A. A.; Arora, B. M.; Kuldeep; Jain, Animesh K.

    1987-09-01

    We have investigated titanium silicide formation using high dose (˜ 2 × 10 21 ions/m 2) ion implantation of 30 keV, 48Ti + ions a room temperature into two different types of Si substrates: (a) n-type <111> single crystals and (b) amorphous Si films (˜ 200 nm thick) vacuum deposited onto a thermally grown SiO 2 layer. XRD and RBS techniques were employed to characterize various silicide phases and their depth distribution in as-implanted as well as in annealed samples. We find that a mixture of TiSi, TiSi 2 and Ti 5Si 4 silicides is formed by high dose implantation. Out of these, TiSi; was found to be the dominant phase. The composition of these silicide layers is practically uniform with depth and remains unaltered on heat treatment up to 750° C. The electrical properties of silicide layers have also been investigated using sheet resistance measurements. The resistivity of as-implanted layers is rather high ( ˜ 10 μΩ m), but drops sharply by nearly a factor of 20 after a post-implantation anneal above 800° C. The resistivity of silicide layers thus obtained compare well with silicides prepared by other techniques.

  14. Initial surface silicidation on Ni(110)

    NASA Astrophysics Data System (ADS)

    Fukuda, T.; Kishida, I.; Umezawa, K.

    2017-05-01

    Initial silicide formation on a Ni(110) surface was studied by scanning tunneling microscopy (STM) in an ultrahigh vacuum. Less than 0.5 ML of Si deposition initiated a Si-Ni mixed layer by displacing substrate Ni, and dark sites were formed in the STM images. A 0.5 ML-Si deposited surface showed that Si and Ni were alternately aligned in a close-packed [ 1 1 bar 0 ] row whereas Si pairs aligned along the [ 001 ] direction forming p(1×2), obliquely aligned forming c(2×2), or even straightly-and-obliquely aligned forming c(4×2) superstructures. A first-principles total energy calculation showed that the p(1×2) and c(4×2) structures had almost the same energy while the c(2×2) structure gave 13 meV/1×1 higher energy. Because a Si-Si bond in the close-packed [ 1 1 bar 0 ] row is energetically unfavorable, Si deposition of more than 0.5 ML did not further replace the substrate Ni, but silicide islands were nucleated along with a trench structure.

  15. Boron modified molybdenum silicide and products

    DOEpatents

    Meyer, Mitchell K.; Akinc, Mufit

    1999-02-02

    A boron-modified molybdenum silicide material having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo.sub.5 Si.sub.3 phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi.sub.2 heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo.sub.5 Si.sub.3 for structural integrity.

  16. Boron modified molybdenum silicide and products

    DOEpatents

    Meyer, M.K.; Akinc, M.

    1999-02-02

    A boron-modified molybdenum silicide material is disclosed having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo{sub 5}Si{sub 3} phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi{sub 2} heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo{sub 5}Si{sub 3} for structural integrity. 7 figs.

  17. Silicide/Silicon Heterointerfaces, Reaction Kinetics and Ultra-short Channel Devices

    NASA Astrophysics Data System (ADS)

    Tang, Wei

    Nickel silicide is one of the electrical contact materials widely used on very large scale integration (VLSI) of Si devices in microelectronic industry. This is because the silicide/silicon interface can be formed in a highly controlled manner to ensure reproducibility of optimal structural and electrical properties of the metal-Si contacts. These advantages can be inherited to Si nanowire (NW) field-effect transistors (FET) device. Due to the technological importance of nickel silicides, fundamental materials science of nickel silicides formation (Ni-Si reaction), especially in nanoscale, has raised wide interest and stimulate new insights and understandings. In this dissertation, in-situ transmission electron microscopy (TEM) in combination with FET device characterization will be demonstrated as useful tools in nano-device fabrication as well as in gaining insights into the process of nickel silicide formation. The shortest transistor channel length (17 nm) fabricated on a vapor-liquid-solid (VLS) grown silicon nanowire (NW) has been demonstrated by controlled reaction with Ni leads on an in-situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 ºC. NiSi2 is the leading phase, and the silicide-silicon interface is an atomically sharp type-A interface. At such channel lengths, high maximum on-currents of 890 (microA/microm) and a maximum transconductance of 430 (microS/microm) were obtained, which pushes forward the performance of bottom-up Si NW Schottky barrier field-effect transistors (SB-FETs). Through accurate control over the silicidation reaction, we provide a systematic study of channel length dependent carrier transport in a large number of SB-FETs with channel lengths in the range of (17 nm -- 3.6 microm). Our device results corroborate with our transport simulations and reveal a characteristic type of short channel effects in SB-FETs, both in on- and off-state, which is different from that in conventional MOSFETs

  18. ITEP MEVVA ion beam for rhenium silicide production

    SciTech Connect

    Kulevoy, T.; Seleznev, D.; Kropachev, G.; Kozlov, A.; Kuibeda, R.; Yakushin, P.; Petrenko, S.; Gerasimenko, N.; Medetov, N.; Zaporozhan, O.

    2010-02-15

    The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

  19. India's Worsening Uranium Shortage

    SciTech Connect

    Curtis, Michael M.

    2007-01-15

    As a result of NSG restrictions, India cannot import the natural uranium required to fuel its Pressurized Heavy Water Reactors (PHWRs); consequently, it is forced to rely on the expediency of domestic uranium production. However, domestic production from mines and byproduct sources has not kept pace with demand from commercial reactors. This shortage has been officially confirmed by the Indian Planning Commission’s Mid-Term Appraisal of the country’s current Five Year Plan. The report stresses that as a result of the uranium shortage, Indian PHWR load factors have been continually decreasing. The Uranium Corporation of India Ltd (UCIL) operates a number of underground mines in the Singhbhum Shear Zone of Jharkhand, and it is all processed at a single mill in Jaduguda. UCIL is attempting to aggrandize operations by establishing new mines and mills in other states, but the requisite permit-gathering and development time will defer production until at least 2009. A significant portion of India’s uranium comes from byproduct sources, but a number of these are derived from accumulated stores that are nearing exhaustion. A current maximum estimate of indigenous uranium production is 430t/yr (230t from mines and 200t from byproduct sources); whereas, the current uranium requirement for Indian PHWRs is 455t/yr (depending on plant capacity factor). This deficit is exacerbated by the additional requirements of the Indian weapons program. Present power generation capacity of Indian nuclear plants is 4350 MWe. The power generation target set by the Indian Department of Atomic Energy (DAE) is 20,000 MWe by the year 2020. It is expected that around half of this total will be provided by PHWRs using indigenously supplied uranium with the bulk of the remainder provided by breeder reactors or pressurized water reactors using imported low-enriched uranium.

  20. In situ integration of freestanding zinc oxide nanorods using copper silicide nanobeams

    NASA Astrophysics Data System (ADS)

    Kumar, Nitin; Parajuli, Omkar; Hahm, Jong-in

    2007-10-01

    In this letter, we describe an in situ integration method to produce freestanding zinc oxide nanorods (ZnO NRs) on copper silicide nanobeams (Cu3Si NBs). The integration of ZnO NRs with Cu3Si NBs is straightforwardly achieved immediately after ZnO NR synthesis by exploiting self-assembled Cu3Si NBs as catalysts. The resulting ZnO NRs on Cu3Si NBs exhibit atomic defect-free structures with superb optical quality which, in turn, can be beneficial when applied in micro- and nanoelectromechanical systems.

  1. Microalloying of transition metal silicides by mechanical activation and field-activated reaction

    DOEpatents

    Munir, Zuhair A.; Woolman, Joseph N.; Petrovic, John J.

    2003-09-02

    Alloys of transition metal suicides that contain one or more alloying elements are fabricated by a two-stage process involving mechanical activation as the first stage and densification and field-activated reaction as the second stage. Mechanical activation, preferably performed by high-energy planetary milling, results in the incorporation of atoms of the alloying element(s) into the crystal lattice of the transition metal, while the densification and field-activated reaction, preferably performed by spark plasma sintering, result in the formation of the alloyed transition metal silicide. Among the many advantages of the process are its ability to accommodate materials that are incompatible in other alloying methods.

  2. On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

    SciTech Connect

    Fatima,; Hossain, Sehtab; Mohottige, Rasika; Oncel, Nuri E-mail: nuri.oncel@und.edu; Can Oguz, Ismail; Gulseren, Oguz E-mail: nuri.oncel@und.edu; Çakır, Deniz

    2016-09-07

    Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77 K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires.

  3. On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

    NASA Astrophysics Data System (ADS)

    Fatima, Can Oguz, Ismail; ćakır, Deniz; Hossain, Sehtab; Mohottige, Rasika; Gulseren, Oguz; Oncel, Nuri

    2016-09-01

    Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77 K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires.

  4. Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

    SciTech Connect

    El-Atwani, Osman; Gonderman, Sean; Suslova, Anastassiya; Fowler, Justin; El-Atwani, Mohamad; DeMasi, Alexander; Ludwig, Karl; Paul Allain, Jean

    2013-03-28

    We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for a time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution.

  5. Interfacial structure of two-dimensional epitaxial Er silicide on Si(111)

    NASA Astrophysics Data System (ADS)

    Tuilier, M. H.; Wetzel, P.; Pirri, C.; Bolmont, D.; Gewinner, G.

    1994-07-01

    Auger-electron diffraction (AED) and surface-extended x-ray-absorption fine structure (SEXAFS) have been used to obtain a complete description of the atomic structure of a two-dimensional epitaxial Er silicide layer on Si(111). AED reveals that a monolayer of Er is located underneath a buckled Si double layer. The relevant Er-Si interlayer spacings are determined by means of single scattering cluster simulations and a R-factor analysis to be 1.92+/-0.05 Å to the first and 2.70+/-0.05 Å to the second Si top layer. Er near-neighbor bond lengths and coordination numbers are obtained independently from polarization-dependent SEXAFS. The SEXAFS data, when combined with the Si top-layer geometry inferred from AED, permit the determination of the atomic positions at the silicide/Si(111) interface. The Er is found to reside in relaxed T4 sites of Si(111) with a single Er-Si distance of 3.09+/-0.04 Å to the first- and second-layer Si atoms of the substrate.

  6. Silicide induced ion beam patterning of Si(001).

    PubMed

    Engler, Martin; Frost, Frank; Müller, Sven; Macko, Sven; Will, Moritz; Feder, René; Spemann, Daniel; Hübner, René; Facsko, Stefan; Michely, Thomas

    2014-03-21

    Low energy ion beam pattern formation on Si with simultaneous co-deposition of Ag, Pd, Pb, Ir, Fe or C impurities was investigated by in situ scanning tunneling microscopy as well as ex situ atomic force microscopy, scanning electron microscopy, transmission electron microscopy and Rutherford backscattering spectrometry. The impurities were supplied by sputter deposition. Additional insight into the mechanism of pattern formation was obtained by more controlled supply through e-beam evaporation. For the situations investigated, the ability of the impurity to react with Si, i.e. to form a silicide, appears to be a necessary, but not a sufficient condition for pattern formation. Comparing the effects of impurities with similar mass and nuclear charge, the collision kinetics is shown to be not of primary importance for pattern formation. To understand the observed phenomena, it is necessary to assume a bi-directional coupling of composition and height fluctuations. This coupling gives rise to a sensitive dependence of the final morphology on the conditions of impurity supply. Because of this history dependence, the final morphology cannot be uniquely characterized by a steady state impurity concentration.

  7. URANIUM RECOVERY

    DOEpatents

    Fitch, F.T.; Cruikshank, A.J.

    1958-10-28

    A process for recovering uranium from a solution of a diethyl dithiocarbaruate of uranium in an orgakic solvent substantially immiscible with water is presented. The process comprises brlnging the organic solutlon into intimate contact wlth an aqueous solution of ammonium carbonate, whereby the uranium passes to the aqueous carbonate solution as a soluble uranyl carbonate.

  8. OMCVD of cobalt and cobalt silicide

    NASA Astrophysics Data System (ADS)

    Dormans, G. J. M.; Meekes, G. J. B. M.; Staring, E. G. J.

    1991-11-01

    Cobalt and cobalt silicide layers were deposited by OMCVD using the Co precursors Co(C 5H 5) 2, Co 2(CO) 8, Co(C 5H 5)(CO) 2 and CoCF 3(CO) 4, and the Si precursors SiH 4 and Si 2H 6. Strongly textured (111)-β Co layers were grown from Co(C 5H 5) 2, Co(C 5H 5)(CO) 2 and CoCF 3(CO) 4 at temperatures above 300°C in H 2 at atmospheric pressure. Growth from Co(C 5H 5) 2 is inhibited on Si substrates. For temperatures ≥600°C the Co layers deposited from Co(C 5H 5)(CO) 2 react with the Si(100) substrate to form CoSi 2(00 l) aligned with the substrate orientation. Co 2(CO) 8 gives amorphous Co between 200 and 300°C. The upper temperature is set by the occurrence of homogeneous gas-phase reactions at atmospheric reactor pressure. Cobalt silicide layers can be grown from CO 2(CO) 8 and (di)silane at temperatures between 200 and 400°C. The Co/Si ratio in the layers decreases with increasing temperature and is independent of the gas-phase Co/Si ratio. Stoichiometric CoSi 2 is obtained at ~ 300°C. Both Co(C 5H 5) 2 and Co(C 5H 5)(CO) 2 react with (di)silane, leading to the incorporation of carbon in the layer. The Co/Si ration and the carbon content in the layers are practically independent of the deposition conditions. With CoCF 3(CO) 4 no contamination-free silicide could be grown. The carbon incorporation with Co(C 5H 5) 2 and Co(C 5H 5)(CO) 2 can be avoided by a pulsed growth method in which the Co precursor and the Si precursor are introduced alternately into the reactor. With Co(C 5H 5) 2 the growth is then inhibited on Si substrates.

  9. Titanium silicide formation on boron-implanted silicon

    SciTech Connect

    Chow, T.P.; Goehner, R.; Katz, W.; Smith, G.

    1985-08-01

    Thin film interaction between Ti and boron-implanted silicon substrates at 650/sup 0/-900/sup 0/ C was investigated. The compositional properties were examined with Rutherford backscattering spectrometry and secondary ion mass spectrometry, the structural properties with x-ray diffraction, and the electrical properties with sheet resistance measurements. At 650/sup 0/ C, incomplete Ti/Si reaction led to significant amounts of intermediate silicide phases (Ti/sub 5/Si/sub 3/ and TiSi) and hence higher sheet resistance. Annealing at 700/sup 0/ C or higher resulted in conversion of the titanium film into predominantly TiSi/sub 2/ and a lower sheet resistance. Boron was found to redistribute into the silicide layer during annealing, leading to an accumulation on the surface and a depletion at the silicide/silicon interface. The diffusion kinetics of boron through titanium silicide are compared with those of other p- and n-type dopants.

  10. Growth and stability of copper silicide thin films

    NASA Astrophysics Data System (ADS)

    Hymes, Stephen William

    1999-11-01

    Copper silicide has been investigated as a candidate material in copper-based multilevel interconnects (MLI)for application in Ultra Large Scale Integration (ULSI). The selective formation of a passivating copper silicide surface layer on a copper thin film is achieved by exposure of the copper film to a dilute silane mixture at elevated temperature. The morphology and kinetics of the surface silicide and subsequent thermal stability in inert and oxidizing ambient were investigated using RBS, XRD and other conventional characterization techniques. Consequently, a preliminary evaluation of this material for application in future microelectronics is made. With respect to growth product formation and morphology, a continuous, uniform, homogenous eta'' -Cu3Si film is formed in the presence of an in-situ 30 sec, 50 watt 3% H2/Ar preclean and silane exposure above 200 C. Silane exposure of the copper film above 300 C leads to the initial formation of gamma-Cu 5Si, as the Cu3Si is no longer stable in the presence of excess underlying copper, until such time that no unreacted copper remains at which point eta''-Cu3 Si again nucleates and grows at the expense of the more copper-rich silicide. The growth kinetics of this surface silicide were also determined. A kinetically limited growth above 1000 sccm of 2% SiH4/Ar is evidenced by saturation of the growth thickness dependence on flow rate. A linear time dependence exists over the low temperature regime corresponding to eta ''-Cu3Si growth. The temperature dependence indicates a reaction rate which is Arrhenius with an apparent activation energy of Ea = 0.87 +/- 0.19 eV. The partial pressure exponent, q, for silane is found to be q = 0.13 +/- .10 while no dependence on the growth rate is found upon total pressure. Evaluation of the silicide surface layer was then performed with respect to stability in inert and oxidizing media. As-formed copper silicide/copper bilayers were annealed in a static air ambient and the oxidation

  11. Iron Silicide Formation by Precipitation in a Silicon Bicrystal

    NASA Astrophysics Data System (ADS)

    Portier, X.; Ihlal, A.; Rizk, R.

    1997-05-01

    Segregation and precipitation of iron in a = 25 silicon bicrystal have been carefully investigated by means of high resolution electron microscopy and energy dispersive X-ray analyses, in combination with capacitance and electron beam induced current measurements. After intentional incorporation of iron in the bicrystal by a simple heating procedure, it was shown that a non-equilibrium segregation of iron has occurred after rapid cooling whereas iron precipitates have been produced upon slow cooling. The silicides are formed mainly at the grain boundary area and they were found to belong to the -FeSi cubic or -FeSi2 tetragonal phases. Each precipitate is simply oriented with respect to one of the two grains without any preference between them. The orientation relationships were found in perfect agreement with those observed for the corresponding iron silicides that are epitaxially grown on oriented silicon substrates. Barrier and recombinative effects on the contaminated (1200 °C) and slowly cooled samples have been detected. These effects have been associated with the formation of iron silicides at the grain boundary. La ségrégation ainsi que la précipitation de siliciures de fer au joint de grains = 25 de silicium ont été etudiées en utilisant la dispersion d'énergie des électrons, la microscopie électronique en transmission haute résolution ainsi que des mesures électriques capacitives et des mesures de courants induits par faisceau d'électrons. A la suite d'une contamination volontaire par diffusion thermique du fer au sein du bicristal, nous avons montré qu'une ségrégation hors-équilibre d'atomes de fer est obtenue après un refroidissement rapide alors qu'un refroidissement lent a pour conséquence la formation de siliciures de fer. Ces petits cristaux de siliciures croissent de préférence au niveau du joint de grains et ils ont pour phase, la phase cubique -FeSi ou la phase quadratique α-FeSi2. Chaque précipité est orienté simplement

  12. Rate Theory Modeling and Simulations of Silicide Fuel at LWR Conditions

    SciTech Connect

    Miao, Yinbin; Ye, Bei; Mei, Zhigang; Hofman, Gerard; Yacout, Abdellatif

    2015-12-10

    Uranium silicide (U3Si2) fuel has higher thermal conductivity and higher uranium density, making it a promising candidate for the accident-tolerant fuel (ATF) used in light water reactors (LWRs). However, previous studies on the fuel performance of U3Si2, including both experimental and computational approaches, have been focusing on the irradiation conditions in research reactors, which usually involve low operation temperatures and high fuel burnups. Thus, it is important to examine the fuel performance of U3Si2 at typical LWR conditions so as to evaluate the feasibility of replacing conventional uranium dioxide fuel with this silicide fuel material. As in-reactor irradiation experiments involve significant time and financial cost, it is appropriate to utilize modeling tools to estimate the behavior of U3Si2 in LWRs based on all those available research reactor experimental references and state-of-the-art density functional theory (DFT) calculation capabilities at the early development stage. Hence, in this report, a comprehensive investigation of the fission gas swelling behavior of U3Si2 at LWR conditions is introduced. The modeling efforts mentioned in this report was based on the rate theory (RT) model of fission gas bubble evolution that has been successfully applied for a variety of fuel materials at devious reactor conditions. Both existing experimental data and DFT-calculated results were used for the optimization of the parameters adopted by the RT model. Meanwhile, the fuel-cladding interaction was captured by the coupling of the RT model with simplified mechanical correlations. Therefore, the swelling behavior of U3Si2 fuel and its consequent interaction with cladding in LWRs was predicted by the rate theory modeling, providing valuable information for the development of U3Si2 fuel as an accident

  13. Evolution of the atomic order and valence state of rare-earth atoms and uranium in a new carbon-metal composite—diphthalocyanine pyrolysate C64H32N16 Me ( Me = Y, La, Ce, Eu, and U)

    NASA Astrophysics Data System (ADS)

    Sovestnov, A. E.; Kapustin, V. K.; Tikhonov, V. I.; Fomin, E. V.; Chernenkov, Yu. P.

    2014-08-01

    The structure of a metal-carbon composite formed by the pyrolysis of diphthalocyanine of some rare-earth elements (Y, La, Ce, Eu) and uranium in the temperature range T ann = 800-1700°C has been investigated for the first time by the methods of X-ray diffraction analysis and X-ray line shift. It has been shown that, in the general case, the studied pyrolysates consist of three phases. One phase corresponds to the structure of graphite. The second phase corresponds to nitrides, carbides, and oxides of basic metal elements with a crystallite size ranging from 5 to 100 nm. The third phase is amorphous or consisting of crystallites with a size of ˜1 nm. It has been found that all the basic elements (Y, La, Ce, Eu, U) and incorporated iodine atoms in the third phase are in a chemically bound state. The previously unobserved electronic configurations have been revealed for europium. The possibility of including not only atoms of elements forming diphthalocyanine but also other elements (for example, iodine) in the composite structure is of interest, in particular, for the creation of a thermally, chemically, and radiation resistant metal-carbon matrix for the radioactive waste storage.

  14. A promising new thermoelectric material - Ruthenium silicide

    NASA Technical Reports Server (NTRS)

    Vining, Cronin B.; Mccormack, Joseph A.; Zoltan, Andrew; Zoltan, Leslie D.

    1991-01-01

    Experimental and theoretical efforts directed toward increasing thermoelectric figure of merit values by a factor of 2 or 3 have been encouraging in several respects. An accurate and detailed theoretical model developed for n-type silicon-germanium (SiGe) indicates that ZT values several times higher than currently available are expected under certain conditions. These new, high ZT materials are expected to be significantly different from SiGe, but not unreasonably so. Several promising candidate materials have been identified which may meet the conditions required by theory. One such candidate, ruthenium silicide, currently under development at JPL, has been estimated to have the potential to exhibit figure of merit values 4 times higher than conventional SiGe materials. Recent results are summarized.

  15. Valence photoelectron spectroscopy of Gd silicides

    SciTech Connect

    Braicovich, L. ); Puppin, E.; Lindau, I. ); Iandelli, A.; Olcese, G.L.; Palenzona, A. )

    1990-02-15

    Gd{sub 3}Si{sub 5}, GdSi, and Gd{sub 5}Si{sub 3} were investigated with photoemission spectroscopy in the photon-energy range 40.8--149 eV by exploiting the energy dependence of the photoemission cross sections and the valence resonance at the crossing of the Gd 4{ital d}-4{ital f} threshold. The modification of the spectra versus photon energy, along with their stoichiometry dependence, show the relevance of covalent mixed Gd 5{ital d}--Si 3{ital sp} states in the formation of the chemical bond. In the region close to the Fermi level an increase of the {ital d} contribution is observed. These points are discussed in connection with the existing models of the silicide bond.

  16. Atomic Fuel, Understanding the Atom Series. Revised.

    ERIC Educational Resources Information Center

    Hogerton, John F.

    This publication is part of the "Understanding the Atom" series. Complete sets of the series are available free to teachers, schools, and public librarians who can make them available for reference or use by groups. Among the topics discussed are: What Atomic Fuel Is; The Odyssey of Uranium; Production of Uranium; Fabrication of Reactor…

  17. Uranium Adsorbent Fibers Prepared by Atom-Transfer Radical Polymerization (ATRP) from Poly(vinyl chloride)- co -chlorinated Poly(vinyl chloride) (PVC- co -CPVC) Fiber

    SciTech Connect

    Brown, Suree; Yue, Yanfeng; Kuo, Li-Jung; Mehio, Nada; Li, Meijun; Gill, Gary; Tsouris, Costas; Mayes, Richard T.; Saito, Tomonori; Dai, Sheng

    2016-03-11

    The need to secure future supplies of energy attracts researchers in several countries to a vast resource of nuclear energy fuel: uranium in seawater (estimated at 4.5 billion tons in seawater). In this study, we developed effective adsorbent fibers for the recovery of uranium from seawater via atom-transfer radical polymerization (ATRP) from a poly-(vinyl chloride)-co-chlorinated poly(vinyl chloride) (PVC-co-CPVC) fiber. ATRP was employed in the surface graft polymerization of acrylonitrile (AN) and tert-butyl acrylate (tBA), precursors for uranium-interacting functional groups, from PVC-co-CPVC fiber. The [tBA]/[AN] was systematically varied to identify the optimal ratio between hydrophilic groups (from tBA) and uranyl-binding ligands (from AN). The best performing adsorbent fiber, the one with the optimal [tBA]/[AN] ratio and a high degree of grafting (1390%), demonstrated uranium adsorption capacities that are significantly greater than those of the Japan Atomic Energy Agency (JAEA) reference fiber in natural seawater tests (2.42 3.24 g/kg in 42 days of seawater exposure and 5.22 g/kg in 49 days of seawater exposure, versus 1.66 g/kg in 42 days of seawater exposure and 1.71 g/kg in 49 days of seawater exposure for JAEA). Lastly, adsorption of other metal ions from seawater and their corresponding kinetics were also studied. The grafting of alternative monomers for the recovery of uranium from seawater is now under development by this versatile technique of ATRP.

  18. Uranium Adsorbent Fibers Prepared by Atom-Transfer Radical Polymerization (ATRP) from Poly(vinyl chloride)- co -chlorinated Poly(vinyl chloride) (PVC- co -CPVC) Fiber

    SciTech Connect

    Brown, Suree; Yue, Yanfeng; Kuo, Li-Jung; Mehio, Nada; Li, Meijun; Gill, Gary; Tsouris, Costas; Mayes, Richard T.; Saito, Tomonori; Dai, Sheng

    2016-04-20

    The need to secure future supplies of energy attracts researchers in several countries to a vast resource of nuclear energy fuel: uranium in seawater (estimated at 4.5 billion tons in seawater). In this study, we developed effective adsorbent fibers for the recovery of uranium from seawater via atom-transfer radical polymerization (ATRP) from a poly- (vinyl chloride)-co-chlorinated poly(vinyl chloride) (PVC-co-CPVC) fiber. ATRP was employed in the surface graft polymerization of acrylonitrile (AN) and tert-butyl acrylate (tBA), precursors for uranium-interacting functional groups, from PVC-co-CPVC fiber. The [tBA]/[AN] was systematically varied to identify the optimal ratio between hydrophilic groups (from tBA) and uranyl-binding ligands (from AN). The best performing adsorbent fiber, the one with the optimal [tBA]/[AN] ratio and a high degree of grafting (1390%), demonstrated uranium adsorption capacities that are significantly greater than those of the Japan Atomic Energy Agency (JAEA) reference fiber in natural seawater tests (2.42-3.24 g/kg in 42 days of seawater exposure and 5.22 g/kg in 49 days of seawater exposure, versus 1.66 g/kg in 42 days of seawater exposure and 1.71 g/kg in 49 days of seawater exposure for JAEA). Adsorption of other metal ions from seawater and their corresponding kinetics were also studied. The grafting of alternative monomers for the recovery of uranium from seawater is now under development by this versatile technique of ATRP.

  19. Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties.

    PubMed

    Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Huang, Yu-Ting; Hu, Jung-Chih; Chen, Lien-Tai; Hsin, Cheng-Lun; Wu, Wen-Wei

    2013-06-07

    Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology.

  20. Plasma-enhanced deposition and processing of transition metals and transition metal silicides for VLSI

    NASA Astrophysics Data System (ADS)

    Hess, D. W.

    1986-05-01

    Radiofrequency (rf) discharges have been used to deposit films of tungsten, molybdenum and titanium silicide. As-deposited tungsten films, from tungsten hexafluoride and hydrogen source gases, were metastable (beta W), with significant (>1 atomic percent) fluorine incorporation. Film resistivities were 40-55 micro ohm - cm due to the beta W, but dropped to about 8 micro ohm cm after a short heat treatment at 700 C which resulted in a phase transition to alpha W (bcc form). The high resistivity (>10,000 micro ohm) associated with molybdenum films deposited from molybdenum hexafluoride and hydrogen appeared to be a result of the formation of molybdenum trifluoride in the deposited material. Titanium silicide films formed from a discharge of titanium tetrachloride, silane, and hydrogen, displayed resistivities of about 150 micro ohm cm, due to small amounts of oxygen and chlorine incorporated during deposition. Plasma etching studies of tungsten films with fluorine containing gases suggest that the etchant species for tungsten in these discharges are fluorine atoms.

  1. {sup 45}Sc Solid State NMR studies of the silicides ScTSi (T=Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt)

    SciTech Connect

    Harmening, Thomas; Eckert, Hellmut; Fehse, Constanze M.; Sebastian, C. Peter; Poettgen, Rainer

    2011-12-15

    The silicides ScTSi (T=Fe, Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt) were synthesized by arc-melting and characterized by X-ray powder diffraction. The structures of ScCoSi, ScRuSi, ScPdSi, and ScIrSi were refined from single crystal diffractometer data. These silicides crystallize with the TiNiSi type, space group Pnma. No systematic influences of the {sup 45}Sc isotropic magnetic shift and nuclear electric quadrupolar coupling parameters on various structural distortion parameters calculated from the crystal structure data can be detected. {sup 45}Sc MAS-NMR data suggest systematic trends in the local electronic structure probed by the scandium atoms: both the electric field gradients and the isotropic magnetic shifts relative to a 0.2 M aqueous Sc(NO{sub 3}){sub 3} solution decrease with increasing valence electron concentration and within each T group the isotropic magnetic shift decreases monotonically with increasing atomic number. The {sup 45}Sc nuclear electric quadrupolar coupling constants are generally well reproduced by quantum mechanical electric field gradient calculations using the WIEN2k code. Highlights: Black-Right-Pointing-Pointer Arc-melting synthesis of silicides ScTSi. Black-Right-Pointing-Pointer Single crystal X-ray data of ScCoSi, ScRuSi, ScPdSi, and ScIrSi. Black-Right-Pointing-Pointer {sup 45}Sc solid state NMR of silicides ScTSi.

  2. Formation, optical properties, and electronic structure of thin Yb silicide films on Si(111)

    NASA Astrophysics Data System (ADS)

    Galkin, N. G.; Maslov, A. M.; Polyarnyi, V. O.

    2005-06-01

    Continuous very thin (2.5-3.0 nm) and thin (16-18 nm) ytterbium suicide films with some pinhole density (3×107- 1×108 cm-2) have been formed on Si(111) by solid phase epitaxy (SPE) and reactive deposition epitaxy (RDE) growth methods on templates. The stoichiometric ytterbium suicide (YbSi2) formation has shown in SPE grown films by AES and EELS data. Very thin Yb suicide films grown by RDE method had the silicon enrichment in YbSi2 suicide composition. The analysis of LEED data and AFM imaging has shown that ytterbium suicide films had non-oriented blocks with the polycrystalline structure. The analysis of scanning region length dependencies of the root mean square roughness deviation (σR(L)) for grown suicide films has shown that the formation of ytterbium suicide in SPE and RDE growth methods is determined by the surface diffusion of Yb atoms during the three-dimensional growth process. Optical functions (n, k, α, ɛ1, ɛ2, Im ɛ1-1, neff, ɛeff) of ytterbium silicide films grown on Si(1 1 1) have been calculated from transmittance and reflectance spectra in the energy range of 0.1-6.2 eV. Two nearly discrete absorption bands have been observed in the electronic structure of Yb silicide films with different composition, which connected with interband transitions on divalent and trivalent Yb states. It was established that the reflection coefficient minimum in R-spectra at energies higher 4.2 eV corresponds to the state density minimum in Yb suicide between divalent and trivalent Yb states. It was shown from optical data that Yb silicide films have the semi-metallic properties with low state densities at energies less 0.4 eV and high state densities at 0.5-2.5 eV.

  3. Silicide/Silicon Hetero-Junction Structure for Thermoelectric Applications.

    PubMed

    Jun, Dongsuk; Kim, Soojung; Choi, Wonchul; Kim, Junsoo; Zyung, Taehyoung; Jang, Moongyu

    2015-10-01

    We fabricated silicide/silicon hetero-junction structured thermoelectric device by CMOS process for the reduction of thermal conductivity with the scatterings of phonons at silicide/silicon interfaces. Electrical conductivities, Seebeck coefficients, power factors, and temperature differences are evaluated using the steady state analysis method. Platinum silicide/silicon multilayered structure showed an enhanced Seebeck coefficient and power factor characteristics, which was considered for p-leg element. Also, erbium silicide/silicon structure showed an enhanced Seebeck coefficient, which was considered for an n-leg element. Silicide/silicon multilayered structure is promising for thermoelectric applications by reducing thermal conductivity with an enhanced Seebeck coefficient. However, because of the high thermal conductivity of the silicon packing during thermal gradient is not a problem any temperature difference. Therefore, requires more testing and analysis in order to overcome this problem. Thermoelectric generators are devices that based on the Seebeck effect, convert temperature differences into electrical energy. Although thermoelectric phenomena have been used for heating and cooling applications quite extensively, it is only in recent years that interest has increased in energy generation.

  4. Epitaxial silicide formation on recoil-implanted substrates

    SciTech Connect

    Hashimoto, Shin; Egashira, Kyoko; Tanaka, Tomoya; Etoh, Ryuji; Hata, Yoshifumi; Tung, R. T.

    2005-01-15

    An epitaxy-on-recoil-implanted-substrate (ERIS) technique is presented. A disordered surface layer, generated by forward recoil implantation of {approx}0.7-3x10{sup 15} cm{sup -2} of oxygen during Ar plasma etching of surface oxide, is shown to facilitate the subsequent epitaxial growth of {approx}25-35-nm-thick CoSi{sub 2} layers on Si(100). The dependence of the epitaxial fraction of the silicide on the recoil-implantation parameters is studied in detail. A reduction in the silicide reaction rate due to recoil-implanted oxygen is shown to be responsible for the observed epitaxial formation, similar to mechanisms previously observed for interlayer-mediated growth techniques. Oxygen is found to remain inside the fully reacted CoSi{sub 2} layer, likely in the form of oxide precipitates. The presence of these oxide precipitates, with only a minor effect on the sheet resistance of the silicide layer, has a surprisingly beneficial effect on the thermal stability of the silicide layers. The agglomeration of ERIS-grown silicide layers on polycrystalline Si is significantly suppressed, likely from a reduced diffusivity due to oxygen in the grain boundaries. The implications of the present technique for the processing of deep submicron devices are discussed.

  5. Hafnium silicide formation on Si(100) upon annealing

    SciTech Connect

    Siervo, A. de; Fluechter, C. R.; Weier, D.; Schuermann, M.; Dreiner, S.; Westphal, C.; Carazzolle, M. F.; Pancotti, A.; Landers, R.; Kleiman, G. G.

    2006-08-15

    High dielectric constant materials, such as HfO{sub 2}, have been extensively studied as alternatives to SiO{sub 2} in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/SiO{sub 2}. The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction (XPD) analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase (HfSi{sub 2}), which starts to crystallize when the annealing temperature is higher than 550 deg. C.

  6. Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

    PubMed Central

    2013-01-01

    Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22℃ to 70℃; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%℃ to 0.6%/℃ for forward bias and around 2.5%/℃ for reverse bias of the diodes. PMID:23594606

  7. URANIUM COMPOSITIONS

    DOEpatents

    Allen, N.P.; Grogan, J.D.

    1959-05-12

    This patent relates to high purity uranium alloys characterized by improved stability to thermal cycling and low thermal neutron absorption. The high purity uranium alloy contains less than 0.1 per cent by weight in total amount of any ore or more of the elements such as aluminum, silicon, phosphorous, tin, lead, bismuth, niobium, and zinc.

  8. Si-Ge Nano-Structured with Tungsten Silicide Inclusions

    NASA Technical Reports Server (NTRS)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

  9. Formation of cobalt silicide by ion beam mixing

    NASA Astrophysics Data System (ADS)

    Min, Ye; Burte, Edmund P.; Ryssel, Heiner

    1991-07-01

    The formation of cobalt silicides by arsenic ion implantation through a cobalt film which causes a mixing of the metal with the silicon substrate was investigated. Furthermore, cobalt suicides were formed by rapid thermal annealing (RTA). Sheet resistance and silicide phases of implanted Co/Si samples depend on the As dose. Ion beam mixing at doses higher than 5 × 10 15 cm -2 and RTA at temperatures T ⩾ 900° C result in almost equal values of Rs. RBS and XRD spectra of these samples illustrate the formation of a homogeneous CoSi 2 layer. Significant lateral growth of cobalt silicide beyond the edge of patterned SiO 2 was observed in samples which were only subjected to an RTA process ( T ⩾ 900 ° C), while this lateral suicide growth could be reduced efficiently by As implantation prior to RTA.

  10. Oxidation resistance of composite silicide coatings on niobium

    SciTech Connect

    Gloshko, P.I.; Kurtsev, N.F.; Lisichenko, V.I.; Nadtoka, V.N.; Petrenko, M.I.; Zmii, V.I.

    1986-07-01

    This paper reports the oxidation of NbSi/sub 2/-MoSi/sub 2/ composite silicide coatings produced by diffusive siliconizing of molybdenum films on a niobium surface. Molybdenum-coated niobium was siliconized and an x-ray microspectral analysis of the composite silicide coating showed the phase composition to be an ca 80-um-thick outer molybdenum disilicide film with a characteristic coarsely crystalline columnar structure, and inner ca 20-um film of niobium disilicide consisting of the tiny columnar crystals, and a substrate/coating interface comprising a thin, 2-3 um film of lower silicide, i.e., Nb/sub 5/Si/sub 3/. The average grain sizes, unit cell parameters, and x-ray determined densities of the Mo films obtained by various methods are shown.

  11. L1 to N5 atomic level widths of thorium and uranium as inferred from measurements of L and M x-ray spectra

    NASA Astrophysics Data System (ADS)

    Raboud, P.-A.; Dousse, J.-Cl.; Hoszowska, J.; Savoy, I.

    2000-01-01

    High-resolution measurements of the photoinduced L and M x-ray spectra of metallic thorium and M x-ray spectrum of metallic uranium were performed with transmission-type and reflection-type bent-crystal spectrometers. Linewidths of 31L and 10M x-ray emission lines of thorium and of 12M x-ray emission lines of uranium were extracted. Using these results and those of Hoszowska et al. [Phys. Rev. A 50, 123 (1994)] for the L x rays of uranium, by means of a least-squares method we have determined the level widths of the subshells L1 to N5 of thorium and uranium.

  12. Study of copper silicide retardation effects on copper diffusion in silicon

    NASA Astrophysics Data System (ADS)

    Lee, C. S.; Gong, H.; Liu, R.; Wee, A. T. S.; Cha, C. L.; See, A.; Chan, L.

    2001-10-01

    A B-buried layer with a dose of 1×1014atoms/cm2 was introduced into p-doped Si at a depth of 2.2 μm to enhance copper diffusion via its inherent gettering effect. Copper was then introduced into silicon either via a low-energy implantation followed by a thermal anneal, or through the thermal drive in of physical vapor deposited (PVD) copper film. Secondary ion mass spectrometry depth profiling of both annealed samples later indicated that while substantial amounts of copper was gettered by the B layer in the former sample, no copper was gettered by the B-buried layer in the latter sample. Further analysis with an x-ray diffraction technique showed that copper silicide, Cu3Si was formed in the latter sample. It is thus surmised that the formation of this silicide layer impeded the diffusion of copper towards the B-buried layer. This work investigates the cause of CuSix formation and the underlying reasons for the lower mobility of Cu in PVD Cu film samples.

  13. Facile Preparation of a Platinum Silicide Nanoparticle-Modified Tip Apex for Scanning Kelvin Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Lin, Chun-Ting; Chen, Yu-Wei; Su, James; Wu, Chien-Ting; Hsiao, Chien-Nan; Shiao, Ming-Hua; Chang, Mao-Nan

    2015-10-01

    In this study, we propose an ultra-facile approach to prepare a platinum silicide nanoparticle-modified tip apex (PSM tip) used for scanning Kelvin probe microscopy (SKPM). We combined a localized fluoride-assisted galvanic replacement reaction (LFAGRR) and atmospheric microwave annealing (AMA) to deposit a single platinum silicide nanoparticle with a diameter of 32 nm on the apex of a bare silicon tip of atomic force microscopy (AFM). The total process was completed in an ambient environment in less than 3 min. The improved potential resolution in the SKPM measurement was verified. Moreover, the resolution of the topography is comparable to that of a bare silicon tip. In addition, the negative charges found on the PSM tips suggest the possibility of exploring the use of current PSM tips to sense electric fields more precisely. The ultra-fast and cost-effective preparation of the PSM tips provides a new direction for the preparation of functional tips for scanning probe microscopy.

  14. Study of temperature dependent zirconium silicide phases in Zr/Si structure by differential scanning calorimetry

    NASA Astrophysics Data System (ADS)

    Faruque, Sk Abdul Kader Md; Ranjan Bhattachryya, Satya; Sinha, Anil Kumar; Chakraborty, Supratic

    2016-02-01

    The differential scanning calorimetry (DSC) technique is employed to study the formation of different silicide compounds of Zr thin-film deposited on a 100 μm-thick Si (1 0 0) substrate by dc sputtering. A detailed analysis shows that silicide layers start growing at  ∼246 °C that changes to stable ZrSi2 at 627 °C via some compounds with different stoichiometric ratios of Zr and Si. It is further observed that oxygen starts reacting with Zr at  ∼540 °C but a stoichiometric ZrO2 film is formed after complete consumption of Zr metal at 857 °C. A further rise in temperature changes a part of ZrSi2 to Zr-Silicate. The synchrotron radiation-based grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies also corroborate the above findings. Atomic force microscopy is also carried out on the samples. It is evident from the observations that an intermixing and nucleation of Zr and Si occur at lower temperature prior to the formation of the interfacial silicate layer. Zr-Silicate formation takes place only at a higher temperature.

  15. Passivation of copper by silicide formation in dilute silane

    NASA Astrophysics Data System (ADS)

    Hymes, S.; Murarka, S. P.; Shepard, C.; Lanford, W. A.

    1992-05-01

    The formation of copper silicide by reaction of silane with sputtered copper films has been observed at temperatures as low as 300 °C. The growth kinetics have been monitored by both sheet resistance and x-ray diffraction techniques. Cu5Si is the first phase to form followed next by Cu3Si, coincident with the loss of the original copper layer. The silicide layer provides significant oxidation protection for the underlying copper up to 550 °C in air.

  16. Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties

    NASA Astrophysics Data System (ADS)

    Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Huang, Yu-Ting; Hu, Jung-Chih; Chen, Lien-Tai; Hsin, Cheng-Lun; Wu, Wen-Wei

    2013-05-01

    Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology.Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing

  17. Deposit model for volcanogenic uranium deposits

    USGS Publications Warehouse

    Breit, George N.; Hall, Susan M.

    2011-01-01

    The International Atomic Energy Agency's tabulation of volcanogenic uranium deposits lists 100 deposits in 20 countries, with major deposits in Russia, Mongolia, and China. Collectively these deposits are estimated to contain uranium resources of approximately 500,000 tons of uranium, which amounts to 6 percent of the known global resources. Prior to the 1990s, these deposits were considered to be small (less than 10,000 tons of uranium) with relatively low to moderate grades (0.05 to 0.2 weight percent of uranium). Recent availability of information on volcanogenic uranium deposits in Asia highlighted the large resource potential of this deposit type. For example, the Streltsovskoye district in eastern Russia produced more than 100,000 tons of uranium as of 2005; with equivalent resources remaining. Known volcanogenic uranium deposits within the United States are located in Idaho, Nevada, Oregon, and Utah. These deposits produced an estimated total of 800 tons of uranium during mining from the 1950s through the 1970s and have known resources of 30,000 tons of uranium. The most recent estimate of speculative resources proposed an endowment of 200,000 tons of uranium.

  18. JACKETING URANIUM

    DOEpatents

    Saller, H.A.; Keeler, J.R.

    1959-07-14

    The bonding to uranium of sheathing of iron or cobalt, or nickel, or alloys thereof is described. The bonding is accomplished by electro-depositing both surfaces to be joined with a coating of silver and amalgamating or alloying the silver layer with mercury or indium. Then the silver alloy is homogenized by exerting pressure on an assembly of the uranium core and the metal jacket, reducing the area of assembly and heating the assembly to homogenize by diffusion.

  19. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    SciTech Connect

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  20. Microwave assisted synthesis of technologically important transition metal silicides

    SciTech Connect

    Vaidhyanathan, B.; Rao, K.J.

    1997-12-01

    A novel, simple, clean and fast microwave assisted method of preparing important transition metal silicides (MoSi{sub 2}, WSi{sub 2}, CoSi{sub 2}, and TiSi{sub 2}) has been described. Amorphous carbon is used both as a microwave susceptor and as a preventer of oxidation. {copyright} {ital 1997 Materials Research Society.}

  1. Deposition of aluminide and silicide based protective coatings on niobium

    NASA Astrophysics Data System (ADS)

    Majumdar, S.; Arya, A.; Sharma, I. G.; Suri, A. K.; Banerjee, S.

    2010-11-01

    We compare aluminide and alumino-silicide composite coatings on niobium using halide activated pack cementation (HAPC) technique for improving its oxidation resistance. The coated samples are characterized by SEM, EDS, EPMA and hardness measurements. We observe formation of NbAl3 in aluminide coating of Nb, though the alumino-silicide coating leads to formation primarily of NbSi2 in the inner layer and a ternary compound of Nb-Si-Al in the outer layer, as reported earlier (Majumdar et al. [11]). Formation of niobium silicide is preferred over niobium aluminide during alumino-silicide coating experiments, indicating Si is more strongly bonded to Nb than Al, although equivalent quantities of aluminium and silicon powders were used in the pack chemistry. We also employ first-principles density functional pseudopotential-based calculations to calculate the relative stability of these intermediate phases and the adhesion strength of the Al/Nb and Si/Nb interfaces. NbSi2 exhibits much stronger covalent character as compared to NbAl3. The ideal work of adhesion for the relaxed Al/Nb and Si/Nb interfaces are calculated to be 3226 mJ/m2 and 3545 mJ/m2, respectively, indicating stronger Nb-Si bonding across the interface.

  2. Oxidation and crystal field effects in uranium

    SciTech Connect

    Tobin, J. G.; Booth, C. H.; Shuh, D. K.; van der Laan, G.; Sokaras, D.; Weng, T. -C.; Yu, S. W.; Bagus, P. S.; Tyliszczak, T.; Nordlund, D.

    2015-07-06

    An extensive investigation of oxidation in uranium has been pursued. This includes the utilization of soft x-ray absorption spectroscopy, hard x-ray absorption near-edge structure, resonant (hard) x-ray emission spectroscopy, cluster calculations, and a branching ratio analysis founded on atomic theory. The samples utilized were uranium dioxide (UO2), uranium trioxide (UO3), and uranium tetrafluoride (UF4). As a result, a discussion of the role of non-spherical perturbations, i.e., crystal or ligand field effects, will be presented.

  3. Texture in thin film silicides and germanides: A review

    NASA Astrophysics Data System (ADS)

    De Schutter, B.; De Keyser, K.; Lavoie, C.; Detavernier, C.

    2016-09-01

    Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi2, C54-TiSi2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si1-xGex in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

  4. Texture in thin film silicides and germanides: A review

    SciTech Connect

    De Schutter, B. De Keyser, K.; Detavernier, C.; Lavoie, C.

    2016-09-15

    Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

  5. Metal gettering by boron-silicide precipitates in boron-implanted silicon

    SciTech Connect

    Myers, S.M.; Petersen, G.A.; Headley, T.J.; Michael, J.R.; Aselage, T.A.; Seager, C.H.

    1996-09-01

    We show that Fe, Co, Cu, and Au impurities in Si are strongly gettered to boron-silicide precipitates formed by supersaturation B implantation and annealing. Effective binding free energies relative to interstitial solution range form somewhat above 1 to more than 2 eV. The B-Si precipitates formed at temperatures {le}1100{degrees}C lack long range structural order but closely resemble and icosahedral B{sub 3}Si phase in composition, local bonding, and chemical potential. Evidence indicates that the metal atoms go into solution in the B-Si phase, and this is interpreted in terms of the novel bonding and structural characteristics of B-rich icosahedral compounds.

  6. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    SciTech Connect

    Siekhaus, W. J.; Teslich, N. E.; Weber, P. K.

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

  7. Sputtering of uranium

    NASA Technical Reports Server (NTRS)

    Gregg, R.; Tombrello, T. A.

    1978-01-01

    Results are presented for an experimental study of the sputtering of U-235 atoms from foil targets by hydrogen, helium, and argon ions, which was performed by observing tracks produced in mica by fission fragments following thermal-neutron-induced fission. The technique used allowed measurements of uranium sputtering yields of less than 0.0001 atom/ion as well as yields involving the removal of less than 0.01 monolayer of the uranium target surface. The results reported include measurements of the sputtering yields for 40-120-keV protons, 40-120-keV He-4(+) ions, and 40- and 80-keV Ar-40(+) ions, the mass distribution of chunks emitted during sputtering by the protons and 80-keV Ar-40(+) ions, the total chunk yield during He-4(+) sputtering, and some limited data on molecular sputtering by H2(+) and H3(+). The angular distribution of the sputtered uranium is discussed, and the yields obtained are compared with the predictions of collision cascade theory.

  8. Instabilities in uranium plasma.

    NASA Technical Reports Server (NTRS)

    Tidman, D. A.

    1971-01-01

    The nonlinear evolution of unstable sound waves in a uranium plasma has been calculated using a multiple time-scale asymptotic expansion scheme. The fluid equations used include the fission power density, radiation diffusion, and the effects of the changing degree of ionization of the uranium atoms. The nonlinear growth of unstable waves is shown to be limited by mode coupling to shorter wavelength waves which are damped by radiation diffusion. This mechanism limits the wave pressure fluctuations to values of order delta P/P equal to about .00001 in the plasma of a typical gas-core nuclear rocket engine. The instability is thus not expected to present a control problem for this engine.

  9. Instabilities in uranium plasma.

    NASA Technical Reports Server (NTRS)

    Tidman, D. A.

    1971-01-01

    The nonlinear evolution of unstable sound waves in a uranium plasma has been calculated using a multiple time-scale asymptotic expansion scheme. The fluid equations used include the fission power density, radiation diffusion, and the effects of the changing degree of ionization of the uranium atoms. The nonlinear growth of unstable waves is shown to be limited by mode coupling to shorter wavelength waves which are damped by radiation diffusion. This mechanism limits the wave pressure fluctuations to values of order delta P/P equal to about .00001 in the plasma of a typical gas-core nuclear rocket engine. The instability is thus not expected to present a control problem for this engine.

  10. Fuel powder production from ductile uranium alloys.

    SciTech Connect

    Clark, C. R.

    1998-10-23

    Metallic uranium alloys are candidate materials for use as the fuel phase in very-high-density LEU dispersion fuels. These ductile alloys cannot be converted to powder form by the processes routinely used for oxides or intermetallics. Three methods of powder production from uranium alloys have been investigated within the US-RERTR program. These processes are grinding, cryogenic milling, and hydride-dehydride. In addition, a gas atomization process was investigated using gold as a surrogate for uranium. Grinding was found to be inefficient and introduced impurities into the fuel. Cryogenic milling of machine chips in a steel vial was found to have similar shortcomings. The hydride-dehydride process has historically been used to produce very fine powder that may not be suitable for fuel fabrication. Uranium is made to form its hydride by heating in a hydrogen atmosphere. Subsequent heating under vacuum drives off hydrogen gas and returns the hydride to a metallic state. The volume change on hydride formation results in a fine powder upon dehydriding. The effects of alloying elements, partial hydriding, and subsequent milling treatments on particle size distribution are being explored. Inert gas atomization is used on an industrial scale to produce metal powder. Current designs are not suitable for use with uranium. A system was specifically designed for uranium atomization. A prototype was built and tested using gold as a surrogate for uranium. The system operates efficiently and can produce powder in a variety of size ranges by changing the atomization nozzle.

  11. The whole-core LEU silicide fuel demonstration in the JMTR

    SciTech Connect

    Aso, Tomokazu; Akashi, Kazutomo; Nagao, Yoshiharu

    1997-08-01

    The JMTR was fully converted to LEU silicide (U{sub 3}Si{sub 2}) fuel with cadmium wires as burnable absorber in January, 1994. The reduced enrichment program for the JMTR was initiated in 1979, and the conversion to MEU (enrichment ; 45%) aluminide fuel was carried out in 1986 as the first step of the program. The final goal of the program was terminated by the present LEU conversion. This paper describes the results of core physics measurement through the conversion phase from MEU fuel core to LEU fuel core. Measured excess reactivities of the LEU fuel cores are mostly in good agreement with predicted values. Reactivity effect and burnup of cadmium wires, therefore, were proved to be well predicted. Control rod worth in the LEU fuel core is mostly less than that in the MEU fuel core. Shutdown margin was verified to be within the safety limit. There is no significant difference in temperature coefficient of reactivity between the MEU and LEU fuel cores. These results verified that the JMTR was successfully and safely converted to LEU fuel. Extension of the operating cycle period was achieved and reduction of spend fuel elements is expected by using the fuel with high uranium density.

  12. Status of core conversion with LEU silicide fuel in JRR-4

    SciTech Connect

    Nakajima, Teruo; Ohnishi, Nobuaki; Shirai, Eiji

    1997-08-01

    Japan Research Reactor No.4 (JRR-4) is a light water moderated and cooled, 93% enriched uranium ETR-type fuel used and swimming pool type reactor with thermal output of 3.5MW. Since the first criticality was achieved on January 28, 1965, JRR-4 has been used for shielding experiments, radioisotope production, neutron activation analyses, training for reactor engineers and so on for about 30 years. Within the framework of the RERTR Program, the works for conversion to LEU fuel are now under way, and neutronic and thermal-hydraulic calculations emphasizing on safety and performance aspects are being carried out. The design and evaluation for the core conversion are based on the Guides for Safety Design and Evaluation of research and testing reactor facilities in Japan. These results show that the JRR-4 will be able to convert to use LEU fuel without any major design change of core and size of fuel element. LEU silicide fuel (19.75%) will be used and maximum neutron flux in irradiation hole would be slightly decreased from present neutron flux value of 7x10{sup 13}(n/cm{sup 2}/s). The conversion works are scheduled to complete in 1998, including with upgrade of the reactor building and utilization facilities.

  13. Experimental studies of thermal and chemical interactions between oxide and silicide nuclear fuels with water

    SciTech Connect

    farahani, A.A.; Corradini, M.L.

    1995-09-01

    Given some transient power/cooling mismatch is a nuclear reactor and its inability to establish the necessary core cooling, energetic fuel-coolant interactions (FCI`s commonly called `vapor explosions`) could occur as a result of the core melting and coolant contact. Although a large number of studies have been done on energetic FCI`s, very few experiments have been performed with the actual fuel materials postulated to be produced in severe accidents. Because of the scarcity of well-characterized FCI data for uranium allows in noncommercial reactors (cermet and silicide fuels), we have conducted a series of experiments to provide a data base for the foregoing materials. An existing 1-D shock-tube facility was modified to handle depleted radioactive materials (U{sub 3}O{sub 8}-Al, and U{sub 3}Si{sub 2}-Al). Our objectives have been to determine the effects of the initial fuel composition and temperature and the driving pressure (triggering) on the explosion work output, dynamic pressures, transient temperatures, and the hydrogen production. Experimental results indicate limited energetics, mainly thermal interactions, for these fuel materials as compared to aluminum where more chemical reactions occur between the molten aluminum and water.

  14. Uranium bombs

    NASA Astrophysics Data System (ADS)

    DeGroot, Gerard

    2009-11-01

    Enrico Fermi was a brilliant physicist, but he did occasionally get things wrong. In 1934 he famously bombarded a sample of uranium with neutrons. The result was astounding: the experiment had, Fermi concluded, produced element 93, later called neptunium. The German physicist Ida Noddack, however, came to an even more spectacular conclusion, namely that Fermi had split the uranium nucleus to produce lighter elements. Noddack's friend Otto Hahn judged that idea preposterous and advised her to keep quiet, since ridicule could ruin a female physicist. She ignored that advice, and was, indeed, scorned.

  15. Investigation into Self-Organizational Tendencies of Cobalt- and Titanium-Silicide Nanostructures on Si Surfaces

    DTIC Science & Technology

    2008-09-22

    properties , directly affects interaction with the deposited metal adatoms, and in conjunction with the metal deposition method, determines the silicide ...formation kinetics and the properties of the silicide /silicon interface. Morphological and statistical characteristics, and the resulting collective...Report 3. DATES COVERED (From – To) 1 April 2007 - 01-Apr-08 4. TITLE AND SUBTITLE Self-Organization of Cobalt Silicide Nanostructures into 2D

  16. High-Performance Thin-Film Transistors Using Ni Silicide for Liquid-Crystal Displays

    DTIC Science & Technology

    2000-07-01

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADPO 11297 TITLE: High-Performance Thin-Film Transistors Using Ni Silicide ...report: ADP011297 thru ADP011332 UNCLASSIFIED Invited Paper High-performance thin-film transistors using Ni silicide for liquid- crystal displays Jin...Jang, Jai I1 Ryu, and Kyu Sik Cho Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea ABSTRACT The Ni- silicide of a

  17. Mortality among uranium enrichment workers

    SciTech Connect

    Brown, D.P.; Bloom, T.

    1987-01-01

    A retrospective cohort mortality study was conducted on workers at the Portsmouth Uranium Enrichment facility in Pike County, Ohio, in response to a request from the Oil, Chemical and Atomic Workers International Local 3-689 for information on long-term health effects. Primary hazards included inhalation exposure to uranyl fluoride containing uranium-235 and uranium-234, technetium-99 compounds, and hydrogen-fluoride. Uranium-238 presented a nephrotoxic hazard. Statistically significant mortality deficits based on U.S. death rates were found for all causes, accidents, violence, and diseases of nervous, circulatory, respiratory, and digestive systems. Standardized mortality rates were 85 and 54 for all malignant neoplasms and for other genitourinary diseases, respectively. Deaths from stomach cancer and lymphatic/hematopoietic cancers were insignificantly increased. A subcohort selected for greatest potential uranium exposure has reduced deaths from these malignancies. Insignificantly increased stomach cancer mortality was found after 15 years employment and after 15 years latency. Routine urinalysis data suggested low internal uranium exposures.

  18. Machining of uranium and uranium alloys

    SciTech Connect

    Morris, T.O.

    1981-12-14

    Uranium and uranium alloys can be readily machined by conventional methods in the standard machine shop when proper safety and operating techniques are used. Material properties that affect machining processes and recommended machining parameters are discussed. Safety procedures and precautions necessary in machining uranium and uranium alloys are also covered. 30 figures.

  19. High-temperature properties of a silicon nitride-intermetallic silicide composite

    SciTech Connect

    Matsumoto, R.L.K.; Weaver, G.G.

    1991-10-01

    Ceramic composites composed of a silicon nitride matrix containing a dispersed silicide phase have been fabricated. While many silicides are brittle at room temperature, they become ductile at high temperatures as they undergo a brittle-to-ductile transition. In contrast to composites having silicides as the matrix phase, the material examined contains dispersed cobalt silicide particulates and has room temperature toughness of 10 MPa sq rt m. The toughness increases to 12 MPa sq rt m at 800 C. When the brittle-to-ductile transition temperature is exceeded, the toughness at 1100 C drops to 6 MPa sq rt m. 13 refs.

  20. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    SciTech Connect

    Ozcan, Ahmet S.; Lavoie, Christian; Jordan-Sweet, Jean; Alptekin, Emre; Zhu, Frank; Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M.

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  1. NbOsSi and TaOsSi - Two new superconducting ternary osmium silicides

    NASA Astrophysics Data System (ADS)

    Benndorf, Christopher; Heletta, Lukas; Heymann, Gunter; Huppertz, Hubert; Eckert, Hellmut; Pöttgen, Rainer

    2017-06-01

    The new equiatomic silicides NbOsSi and TaOsSi as well as ZrOsSi, TIrSi (T = Zr, Hf, Nb, Ta) and TPtSi (T = Nb, Ta) were prepared from the elements by arc-melting. These silicides crystallize with the orthorhombic TiNiSi type structure, space group Pnma. Irregularly shaped crystals of ZrOsSi, NbOsSi, TaOsSi, ZrIrSi and HfIrSi were separated from the annealed samples and investigated by single-crystal X-ray diffraction (a = 640.46(7), b = 404.07(5), c = 743.66(8) pm, wR2 = 0.0285, 390 F2 values, 20 variables for ZrOsSi; a = 629.78(6), b = 388.72(4), c = 727.48(7) pm, wR2 = 0.0350, 397 F2 values, 20 variables for NbOsSi, a = 626.80(6), b = 389.36(4), c = 726.22(7) pm, wR2 = 0.0501, 385 F2 values, 20 variables for TaOsSi, a = 653.48(8), b = 395.35(4), c = 739.19(8) pm, wR2 = 0.0427, 413 F2 values, 20 variables for ZrIrSi and a = 646.34(12), b = 393.57(7), c = 736.8(14) pm, wR2 = 0.0582, 371 F2 values, 20 variables for HfIrSi). The striking structural motifs in the new osmium compounds are three-dimensional [OsSi] networks (Os-Si: 240-251 pm) in which the osmium atoms have strongly distorted tetrahedral silicon coordination. High-pressure/high-temperature experiments (9.5 GPa/1520 K) on TaOsSi gave no hint for a structural phase transition. Temperature dependent measurements of the magnetic susceptibility and the electrical conductivity of NbOsSi and TaOsSi showed superconductivity below TC = 3.5 and 5.5 K, respectively. 29Si solid state MAS NMR investigations of the prepared silicides approved the structural models and showed a correlation between the observed 29Si resonance shifts and the electronegativity of the involved refractory metal.

  2. Oxidation behavior of molybdenum silicides and their composites

    SciTech Connect

    Natesan, K.; Deevi, S. C.

    2000-04-03

    A key materials issue associated with the future of high-temperature structural silicides is the resistance of these materials to oxidation at low temperatures. Oxidation tests were conducted on Mo-based silicides over a wide temperature range to evaluate the effects of alloy composition and temperature on the protective scaling characteristics and testing regime for the materials. The study included Mo{sub 5}Si{sub 3} alloys that contained several concentrations of B. In addition, oxidation characteristics of MoSi{sub 2}-Si{sub 3}N{sub 4} composites that contained 20--80 vol.% Si{sub 3}N{sub 4} were evaluated at 500--1,400 C.

  3. Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts

    NASA Astrophysics Data System (ADS)

    Alberti, Alessandra; Roccaforte, Fabrizio; Libertino, Sebania; Bongiorno, Corrado; La Magna, Antonino

    2011-11-01

    Ni-silicide/silicon Schottky contacts have been realised by promoting low-temperature Ni-Si interdiffusion during deposition (˜50 °C) and reaction (450 °C) on an oxygen-free [001] silicon surface. A 14 nm transrotational NiSi layer was produced made of extremely flat pseudo-epitaxial domains (˜200 nm in diameter). The current-voltage (I-V) characteristics (340-80 K) have indicated the presence of structural inhomogeneities which lower the Schottky barrier by Δ≈0.1 eV. They have been associated with the core regions of the trans-domains (wherein the silicide lattice is epitaxially aligned to that of Si) since their density (˜2.5×109 cm-2) and dimension (˜10 nm) fit the I-V curves vs temperature following the Tung's approach.

  4. Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

    PubMed

    Savelli, Guillaume; Stein, Sergio Silveira; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent; Dilhaire, Stefan; Pernot, Gilles

    2015-07-10

    Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields.

  5. Uranium, natural

    Integrated Risk Information System (IRIS)

    Uranium , natural ; CASRN 7440 - 61 - 1 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogeni

  6. URANIUM ALLOYS

    DOEpatents

    Seybolt, A.U.

    1958-04-15

    Uranium alloys containing from 0.1 to 10% by weight, but preferably at least 5%, of either zirconium, niobium, or molybdenum exhibit highly desirable nuclear and structural properties which may be improved by heating the alloy to about 900 d C for an extended period of time and then rapidly quenching it.

  7. Characteristics of a promising new thermoelectric material - Ruthenium silicide

    NASA Technical Reports Server (NTRS)

    Ohta, Toshitaka; Vining, Cronin B.; Allevato, Camillo E.

    1991-01-01

    A preliminary study on arc-melted samples has indicated that ruthenium silicide has the potential to obtain figure-of-merit values four times higher than that of conventional silicon-germanium material. In order to realize the high figure-of-merit values, high-quality crystal from the melt is needed. A Bridgman-like method has been employed and has realized much better crystals than arc-melted ones.

  8. Stacked Metal Silicide/Silicon Far-Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph

    1988-01-01

    Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

  9. Silicide-matrix materials for high-temperature applications

    SciTech Connect

    Meschter, P.J.; Schwartz, D.S. )

    1989-11-01

    Intermetallic-matrix composites are attractive alternatives to carbon/carbon and ceramic/ceramic composities for applications up to 1,600 C. Recent work on the intermetallic compounds MoSi2 and Ti5Si3 has included determination of their mechanical properties and deformation behavior, selection of thermodynamically compatible high-strength and ductile reinforcements, and strengthening and toughening mechanisms in silicide-matrix composites for high-temperature service. 11 refs.

  10. Carbon nanotube cantilevers on self-aligned copper silicide nanobeams

    NASA Astrophysics Data System (ADS)

    Parajuli, Omkar; Kumar, Nitin; Kipp, Dylan; Hahm, Jong-in

    2007-04-01

    In this letter, the authors describe both a growth method for self-aligning copper silicide (Cu3Si) nanobeams and their use as active catalysts for carbon nanotube (CNT) synthesis via chemical vapor deposition. In the unique geometry of these useful structures, CNT cantilevers are anchored firmly to the Cu3Si nanobeams. The resulting CNT-Cu3Si structures may improve accuracy and reliability of CNT applications in nanoelectromechanical systems.

  11. Processing, Microstructure, and Properties of Multiphase Mo Silicide Alloys

    SciTech Connect

    Heatherly, L.; Liu, C.T.; Schneibel, J.H.

    1998-11-30

    Multiphase Mo silicide alloys containing T2 (Mo{sub 5}SiB{sub 2}), Mo{sub 3}Si and Mo phases where prepared by both melting and casting (M and C) and powder metallurgical (PM) processes. Glassy phases are observed in PM materials but not in M and C materials. Microstructural studies indicate that the primary phase is Mo-rich solid solution in alloys containing {le}(9.4Si+13.8B, at. %) and T2 in alloys with {ge}(9.8Si+14.6B). An eutectic composition is estimated to be close to Mo-9.6Si-14.2B. The mechanical properties of multiphase silicide alloys were determined by hardness, tensile and bending tests at room temperature. The multiphase alloy MSB-18 (Mo-9.4Si-13.8B) possesses a flexure strength distinctly higher than that of MoSi{sub 2} and other Mo{sub 5}Si{sub 3} silicide alloys containing no Mo particles. Also, MSB-18 is tougher than MoSi{sub 2} by a factor of 4.

  12. Increasing the heat resistance of vanadium by siliciding

    SciTech Connect

    Lyutyi, E.M.; Tsvikilevich, O.S.; Shirokov, V.V.; Stepanishin, V.I.

    1988-01-01

    The purpose of this article was to evaluate the influence of modifier metals on the protective properties of silicide coatings in heating of vanadium in air and also on the mechanical properties of type VnM-2 unalloyed vanadium and VTsU alloy. Coatings were produced by diffusion impregnation from molten sodium with silicon or silicides of the modifying elements. The silicides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, chromium, tungsten, rhenium, and nickel were investigated using x-ray spectrometric and hardness investigations and x-ray diffractometric analysis. The protective properties of the coatings were determined from the relative change in weight of the samples with and without coatings during isothermal oxidation in air at 1073/sup 0/K and also by differential thermal analysis. The influence of the coating on the mechanical properties of the material was also investigated using a borosilicide coating. High-temperature vacuum annealing was assessed as a method for restoring the plastic properties and relieving the stresses of vanadium and VTsU alloy subsequent to coating.

  13. Continuing investigations for technology assessment of /sup 99/Mo production from LEU (low enriched Uranium) targets

    SciTech Connect

    Vandergrift, G.F.; Kwok, J.D.; Marshall, S.L.; Vissers, D.R.; Matos, J.E.

    1987-01-01

    Currently much of the world's supply of /sup 99m/Tc for medical purposes is produced from /sup 99/Mo derived from the fissioning of high enriched uranium (HEU). The need for /sup 99m/Tc is continuing to grow, especially in developing countries, where needs and national priorities call for internal production of /sup 99/Mo. This paper presents the results of our continuing studies on the effects of substituting low enriched Uranium (LEU) for HEU in targets for the production of fission product /sup 99/Mo. Improvements in the electrodeposition of thin films of uranium metal are reported. These improvements continue to increase the appeal for the substitution of LEU metal for HEU oxide films in cylindrical targets. The process is effective for targets fabricated from stainless steel or hastaloy. A cost estimate for setting up the necessary equipment to electrodeposit uranium metal on cylindrical targets is reported. Further investigations on the effect of LEU substitution on processing of these targets are also reported. Substitution of uranium silicides for the uranium-aluminum alloy or uranium aluminide dispersed fuel used in other current target designs will allow the substitution of LEU for HEU in these targets with equivalent /sup 99/Mo-yield per target and no change in target geometries. However, this substitution will require modifications in current processing steps due to (1) the insolubility of uranium silicides in alkaline solutions and (2) the presence of significant quantities of silicate in solution. Results to date suggest that both concerns can be handled and that substitution of LEU for HEU can be achieved.

  14. Uranium industry annual 1996

    SciTech Connect

    1997-04-01

    The Uranium Industry Annual 1996 (UIA 1996) provides current statistical data on the US uranium industry`s activities relating to uranium raw materials and uranium marketing. The UIA 1996 is prepared for use by the Congress, Federal and State agencies, the uranium and nuclear electric utility industries, and the public. Data on uranium raw materials activities for 1987 through 1996 including exploration activities and expenditures, EIA-estimated reserves, mine production of uranium, production of uranium concentrate, and industry employment are presented in Chapter 1. Data on uranium marketing activities for 1994 through 2006, including purchases of uranium and enrichment services, enrichment feed deliveries, uranium fuel assemblies, filled and unfilled market requirements, uranium imports and exports, and uranium inventories are shown in Chapter 2. A feature article, The Role of Thorium in Nuclear Energy, is included. 24 figs., 56 tabs.

  15. Characterisation of amorphous molybdenum silicide (MoSi) superconducting thin films and nanowires

    NASA Astrophysics Data System (ADS)

    Banerjee, Archan; Baker, Luke J.; Doye, Alastair; Nord, Magnus; Heath, Robert M.; Erotokritou, Kleanthis; Bosworth, David; Barber, Zoe H.; MacLaren, Ian; Hadfield, Robert H.

    2017-08-01

    We report on the optimisation of amorphous molybdenum silicide thin film growth for superconducting nanowire single-photon detector (SNSPD) applications. Molybdenum silicide was deposited via co-sputtering from Mo and Si targets in an Ar atmosphere. The superconducting transition temperature (T c) and sheet resistance (R s) were measured as a function of thickness and compared to several theoretical models for disordered superconducting films. Superconducting and optical properties of amorphous materials are very sensitive to short- (up to 1 nm) and medium-range order (˜1-3 nm) in the atomic structure. Fluctuation electron microscopy studies showed that the films assumed an A15-like medium-range order. Electron energy loss spectroscopy indicates that the film stoichiometry was close to Mo83Si17, which is consistent with reports that many other A15 structures with the nominal formula A 3 B show a significant non-stoichiometry with A:B > 3:1. Optical properties from ultraviolet (270 nm) to infrared (2200 nm) wavelengths were measured via spectroscopic ellipsometry for 5 nm thick MoSi films indicating high long wavelength absorption. We also measured the current density as a function of temperature for nanowires patterned from a 10 nm thick MoSi film. The current density at 3.6 K is 3.6 × 105 A cm-2 for the widest wire studied (2003 nm), falling to 2 × 105 A cm-2 for the narrowest (173 nm). This investigation confirms the excellent suitability of MoSi for SNSPD applications and gives fresh insight into the properties of the underlying materials.

  16. Nickel-affected silicon crystallization and silicidation on polyimide by multipulse excimer laser annealing

    SciTech Connect

    Alberti, A.; La Magna, A.; Spinella, C.; Privitera, V.; Cuscuna, M.; Fortunato, G.

    2010-12-15

    Nickel enhanced amorphous Si crystallization and silicidation on polyimide were studied during multipulse excimer laser annealing (ELA) from submelting to melting conditions. A {approx}8 nm thick Ni film was deposited on a 100 nm thick {alpha}-Si layer at {approx}70 deg. C in order to promote partial nickel diffusion into silicon. In the submelting regime, Ni atoms distributed during deposition in {alpha}-Si and the thermal gradient due to the presence of the plastic substrate were crucial to induce low fluence ({>=}0.08 J/cm{sup 2}) Si crystallization to a depth which is strictly related to the starting Ni profile. {Alpha}morphous-Si crystallization is not expected on pure Si at those low fluences. Additional pulses at higher fluences do not modify the double poly-Si/{alpha}-Si structure until melting conditions are reached. At a threshold of {approx}0.2 J/cm{sup 2}, melting was induced simultaneously in the polycrystalline layer as well as in the residual {alpha}-Si due to a thermal gradient of {approx}200 deg. C. Further increasing the laser fluence causes the poly-Si layer to be progressively melted to a depth which is proportional to the energy density used. As a consequence of the complete Si melting, columnar poly-Si grains are formed above 0.3 J/cm{sup 2}. For all fluences, a continuous NiSi{sub 2} layer is formed at the surface which fills the large Si grain boundaries, with the beneficial effect of flattening the poly-Si surface. The results would open the perspective of integrating Ni-silicide layers as metallic contacts on Si during {alpha}-Si-crystallization by ELA on plastic substrate.

  17. 31 CFR 540.317 - Uranium feed; natural uranium feed.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Uranium feed; natural uranium feed...) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.317 Uranium feed; natural uranium feed. The term uranium feed or natural uranium feed means natural uranium in the form of UF6 suitable for uranium...

  18. 31 CFR 540.317 - Uranium feed; natural uranium feed.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Uranium feed; natural uranium feed...) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.317 Uranium feed; natural uranium feed. The term uranium feed or natural uranium feed means natural uranium in the form of UF6 suitable for uranium...

  19. Measurements of uranium mass confined in high density plasmas

    NASA Technical Reports Server (NTRS)

    Stoeffler, R. C.

    1976-01-01

    An X-ray absorption method for measuring the amount of uranium confined in high density, rf-heated uranium plasmas is described. A comparison of measured absorption of 8 keV X-rays with absorption calculated using Beer Law indicated that the method could be used to measure uranium densities from 3 times 10 to the 16th power atoms/cu cm to 5 times 10 to the 18th power atoms/cu cm. Tests were conducted to measure the density of uranium in an rf-heated argon plasma with UF6 infection and with the power to maintain the discharge supplied by a 1.2 MW rf induction heater facility. The uranium density was measured as the flow rate through the test chamber was varied. A maximum uranium density of 3.85 times 10 to the 17th power atoms/cu cm was measured.

  20. Measurements of uranium mass confined in high density plasmas

    NASA Technical Reports Server (NTRS)

    Stoeffler, R. C.

    1976-01-01

    An X-ray absorption method for measuring the amount of uranium confined in high density, rf-heated uranium plasmas is described. A comparison of measured absorption of 8 keV X-rays with absorption calculated using Beer Law indicated that the method could be used to measure uranium densities from 3 times 10 to the 16th power atoms/cu cm to 5 times 10 to the 18th power atoms/cu cm. Tests were conducted to measure the density of uranium in an rf-heated argon plasma with UF6 infection and with the power to maintain the discharge supplied by a 1.2 MW rf induction heater facility. The uranium density was measured as the flow rate through the test chamber was varied. A maximum uranium density of 3.85 times 10 to the 17th power atoms/cu cm was measured.

  1. The new ternary silicide Gd{sub 5}CoSi{sub 2}: Structural, magnetic and magnetocaloric properties

    SciTech Connect

    Mayer, Charlotte; Gaudin, Etienne; Gorsse, Stephane; Chevalier, Bernard

    2011-02-15

    Gd{sub 5}CoSi{sub 2} was prepared by annealing at 1003 K. Its investigation by the X-ray powder diffraction shows that the ternary silicide crystallizes in a tetragonal structure deriving from the Cr{sub 5}B{sub 3}-type (I4/mcm space group; a=7.5799(4) and c=13.5091(12) A as unit cell parameters). The Rietveld refinement shows a mixed occupancy on the (8h) site between Si and Co atoms. Magnetization and specific heat measurements performed on Gd{sub 5}CoSi{sub 2} reveal a ferromagnetic behaviour below T{sub C}=168 K. This magnetic ordering is associated to an interesting magnetocaloric effect; the adiabatic temperature change {Delta}T{sub ad} is about 3.1 and 5.9 K, respectively, for a magnetic field change of 2 and 4.6 T. -- Graphical abstract: The adiabatic temperature change {Delta}T{sub ad} was determined by combining the heat capacity measurements and the magnetization data. As expected, a peak near the Curie temperature of the Gd{sub 5}CoSi{sub 2} ternary silicide is observed, with a maximum of {Delta}T{sub ad} around 3.1 and 5.9 K for {Delta}H=2 and 4.6 T, respectively. Display Omitted Research Highlights: {yields} We prepare and characterize for the first time the ternary silicide Gd{sub 5}CoSi{sub 2}. {yields} Gd{sub 5}CoSi{sub 2} crystallizes in the tetragonal structure deriving from the Cr{sub 5}B{sub 3}-type. {yields} Gd{sub 5}CoSi{sub 2} shows a ferromagnetic behaviour below 168 K associated with magnetocaloric properties.

  2. Silicide phase formation in Ni/Si system: Depth-resolved positron annihilation and Rutherford backscattering study

    SciTech Connect

    Abhaya, S.; Amarendra, G.; Panigrahi, B.K.; Nair, K.G.M.

    2006-02-01

    Silicidation in Ni/Si thin-film junction has been investigated using depth-resolved positron annihilation spectroscopy (PAS) and Rutherford backscattering spectrometry (RBS). Identification of various silicide phases from an analysis of the positron annihilation parameters is consistent with the RBS results. Absence of vacancy defects in the silicide region is clearly brought out by PAS00.

  3. Nuclear reactor fuel structure containing uranium alloy wires embedded in a metallic matrix plate

    DOEpatents

    Travelli, A.

    1985-10-25

    A flat or curved plate structure, to be used as fuel in a nuclear reactor, comprises elongated fissionable wires or strips embedded in a metallic continuous non-fissionable matrix plate. The wires or strips are made predominantly of a malleable uranium alloy, such as uranium silicide, uranium gallide or uranium germanide. The matrix plate is made predominantly of aluminum or an aluminum alloy. The wires or strips are located in a single row at the midsurface of the plate, parallel with one another and with the length dimension of the plate. The wires or strips are separated from each other, and from the surface of the plate, by sufficient thicknesses of matrix material, to provide structural integrity and effective fission product retention, under neutron irradiation. This construction makes it safely feasible to provide a high uranium density, so that the uranium enrichment with uranium 235 may be reduced below about 20%, to deter the reprocessing of the uranium for use in nuclear weapons.

  4. Nuclear reactor fuel structure containing uranium alloy wires embedded in a metallic matrix plate

    DOEpatents

    Travelli, Armando

    1988-01-01

    A flat or curved plate structure, to be used as fuel in a nuclear reactor, comprises elongated fissionable wires or strips embedded in a metallic continuous non-fissionable matrix plate. The wires or strips are made predominantly of a malleable uranium alloy, such as uranium silicide, uranium gallide or uranium germanide. The matrix plate is made predominantly of aluminum or an aluminum alloy. The wires or strips are located in a single row at the midsurface of the plate, parallel with one another and with the length dimension of the plate. The wires or strips are separated from each other, and from the surface of the plate, by sufficient thicknesses of matrix material, to provide structural integrity and effective fission product retention, under neutron irradiation. This construction makes it safely feasible to provide a high uranium density, so that the uranium enrichment with uranium 235 may be reduced below about 20%, to deter the reprocessing of the uranium for use in nuclear weapons.

  5. Columnar and subsurface silicide growth with novel molecular beam epitaxy techniques

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; George, T.; Pike, W. T.

    1992-01-01

    We have found novel growth modes for epitaxial CoSi2 at high temperatures coupled with Si-rich flux ratios or low deposition rates. In the first of these modes, codeposition of metal and Si at 600-800 C with excess Si leads to the formation of epitaxial silicide columns surrounded by single-crystal Si. During the initial stages of the deposition, the excess Si grows homoepitaxially in between the silicide, which forms islands, so that the lateral growth of the islands is confined. Once a template layer is established by this process, columns of silicide form as a result of selective epitaxy of silicide on silicide and Si on Si. This growth process allows nanometer control over silicide particles in three dimensions. In the second of these modes, a columnar silicide seed layer is used as a template to nucleate subsurface growth of CoSi2. With a 100 nm Si layer covering CoSi2 seeds, Co deposited at 800C and 0.01 nm/s diffuses down to grow on the buried seeds rather than nucleating surface silicide islands. For thicker Si caps or higher deposition rates, the surface concentration of Co exceeds the critical concentration for nucleation of islands, preventing this subsurface growth mode from occurring. Using this technique, single-crystal layers of CoSi2 buried under single-crystal Si caps have been grown.

  6. Acceleration of uranium at the Bevalac

    SciTech Connect

    Alonso, J.R.; Avery, R.T.; Elioff, T.; Force, R.J.; Grunder, H.A.; Lancaster, H.D.; Lofgren, E.J.; Meneghetti, J.R.; Selph, F.B.; Stevenson, R.R.

    1982-09-17

    Recent upgrading projects have extended the mass range of particles that can be accelerated at the Bevalac to include any element of the periodic table to energies above 1 billion electron volts per atomic mass unit. This capability was verified on 11 May 1982 with the production of a uranium beam at 147.7 million electron volts per atomic mass unit.

  7. Derived enriched uranium market

    SciTech Connect

    Rutkowski, E.

    1996-12-01

    The potential impact on the uranium market of highly enriched uranium from nuclear weapons dismantling in the Russian Federation and the USA is analyzed. Uranium supply, conversion, and enrichment factors are outlined for each country; inventories are also listed. The enrichment component and conversion components are expected to cause little disruption to uranium markets. The uranium component of Russian derived enriched uranium hexafluoride is unresolved; US legislation places constraints on its introduction into the US market.

  8. Radiation-associated lung cancer: A comparison of the histology of lung cancers in uranium miners and survivors of the atomic bombings of Hiroshima and Nagasaki

    SciTech Connect

    Land, C.E.; Shimosato, Y.; Saccomanno, G.; Tokuoka, S.; Auerbach, O.; Tateishi, R.; Greenberg, S.D.; Nambu, S.; Carter, D.; Akiba, S. )

    1993-05-01

    A binational panel of Japanese and American pulmonary pathologists reviewed tissue slides of lung cancer cases diagnosed among Japanese A-bomb survivors and American uranium miners and classified the cases according to histological subtype. Blind reviews were completed on slides from 92 uranium miners and 108 A-bomb survivors, without knowledge of population, sex, age, smoking history, or level of radiation exposure. Consensus diagnoses were obtained with respect to principal subtype, including squamous-cell cancer, small-cell cancer, adenocarcinoma, and less frequent subtypes. The results were analyzed in terms of population, radiation dose, and smoking history. As expected, the proportion of squamous-cell cancer was positively related to smoking history in both populations. The relative frequencies of small-cell cancer and adenocarcinoma were very different in the two populations, but this difference was accounted for adequately by differences in radiation dose or, more specifically, dose-based relative risk estimates based on published data. Radiation-induced cancers appeared more likely to be of the small-cell subtype, and less likely to be adenocarcinomas, in both populations. The data appeared to require no additional explanation in terms of radiation quality (alpha particles vs gamma rays), uniform or local irradiation, inhaled vs external radiation source, or other population difference.

  9. Radiation-associated lung cancer: a comparison of the histology of lung cancers in uranium miners and survivors of the atomic bombings of Hiroshima and Nagasaki.

    PubMed

    Land, C E; Shimosato, Y; Saccomanno, G; Tokuoka, S; Auerbach, O; Tateishi, R; Greenberg, S D; Nambu, S; Carter, D; Akiba, S

    1993-05-01

    A binational panel of Japanese and American pulmonary pathologists reviewed tissue slides of lung cancer cases diagnosed among Japanese A-bomb survivors and American uranium miners and classified the cases according to histological subtype. Blind reviews were completed on slides from 92 uranium miners and 108 A-bomb survivors, without knowledge of population, sex, age, smoking history, or level of radiation exposure. Consensus diagnoses were obtained with respect to principal subtype, including squamous-cell cancer, small-cell cancer, adenocarcinoma, and less frequent subtypes. The results were analyzed in terms of population, radiation dose, and smoking history. As expected, the proportion of squamous-cell cancer was positively related to smoking history in both populations. The relative frequencies of small-cell cancer and adenocarcinoma were very different in the two populations, but this difference was accounted for adequately by differences in radiation dose or, more specifically, dose-based relative risk estimates based on published data. Radiation-induced cancers appeared more likely to be of the small-cell subtype, and less likely to be adenocarcinomas, in both populations. The data appeared to require no additional explanation in terms of radiation quality (alpha particles vs gamma rays), uniform or local irradiation, inhaled vs external radiation source, or other population difference.

  10. Formation of low resistivity titanium silicide gates in semiconductor integrated circuits

    DOEpatents

    Ishida, Emi

    1999-08-10

    A method of forming a titanium silicide (69) includes the steps of forming a transistor having a source region (58), a drain region (60) and a gate structure (56) and forming a titanium layer (66) over the transistor. A first anneal is performed with a laser anneal at an energy level that causes the titanium layer (66) to react with the gate structure (56) to form a high resistivity titanium silicide phase (68) having substantially small grain sizes. The unreacted portions of the titanium layer (66) are removed and a second anneal is performed, thereby causing the high resistivity titanium silicide phase (68) to convert to a low resistivity titanium silicide phase (69). The small grain sizes obtained by the first anneal allow low resistivity titanium silicide phase (69) to be achieved at device geometries less than about 0.25 micron.

  11. Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion

    PubMed Central

    2014-01-01

    Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems. PMID:24994964

  12. Ion-beam nanopatterning of silicon surfaces under codeposition of non-silicide-forming impurities

    NASA Astrophysics Data System (ADS)

    Moon, B.; Yoo, S.; Kim, J.-S.; Kang, S. J.; Muñoz-García, J.; Cuerno, R.

    2016-03-01

    We report experiments on surface nanopatterning of Si targets which are irradiated with 2-keV Ar+ ions impinging at near-glancing incidence, under concurrent codeposition of Au impurities simultaneously extracted from a gold target by the same ion beam. Previous recent experiments by a number of groups suggest that silicide formation is a prerequisite for pattern formation in the presence of metallic impurities. In spite of the fact that Au is known not to form stable compounds with the Si atoms, ripples nonetheless emerge in our experiments with nanometric wavelengths and small amplitudes, and with an orientation that changes with distance to the Au source. We provide results of sample analysis through Auger electron and energy-dispersive x-ray spectroscopies for their space-resolved chemical composition, and through atomic force, scanning transmission electron, and high-resolution transmission microscopies for their morphological properties. We discuss these findings in the light of current continuum models for this class of systems. The composition of and the dynamics within the near-surface amorphized layer that ensues is expected to play a relevant role to account for the unexpected formation of these surface structures.

  13. Uranium Industry Annual, 1992

    SciTech Connect

    Not Available

    1993-10-28

    The Uranium Industry Annual provides current statistical data on the US uranium industry for the Congress, Federal and State agencies, the uranium and electric utility industries, and the public. The feature article, ``Decommissioning of US Conventional Uranium Production Centers,`` is included. Data on uranium raw materials activities including exploration activities and expenditures, resources and reserves, mine production of uranium, production of uranium concentrate, and industry employment are presented in Chapter 1. Data on uranium marketing activities including domestic uranium purchases, commitments by utilities, procurement arrangements, uranium imports under purchase contracts and exports, deliveries to enrichment suppliers, inventories, secondary market activities, utility market requirements, and uranium for sale by domestic suppliers are presented in Chapter 2.

  14. Uzbekistan unveiled. [Uranium production to commence

    SciTech Connect

    Mazurkevich, A.P.

    1993-05-01

    Through centuries of revolution, war and strife, the people of Uzbekistan have built a reputation as skilled and tenacious merchants. Since antiquity, when the Silk Road from China turned toward Europe at Smarakand, they have been master traders of such valuable commodities as cotton, fruits, vegetables, spices and gold. Now, they're about to introduce another of their specialties to the world: Uranium. Uranium mining in the country is controlled by a new, independent company, the Kizilkumredmetzoloto, parent of the Navoi Mining Metallurgy Combine [NMMC]. Established in 1958 at the height of the Cold War, when uranium mining for military stockpiles got started in earnest, Navoi was wholly owned by the USSR's Ministry of Medium Machine Building. Up until 1991, virtually all of Navoi's uranium production, strictly in the form of uranium concentrates, was used for either military purposes or for nuclear power plants within the former Soviet Union. The republic exerted no control over the final destination of its uranium. All production and operating decisions for Navoi's mines were dictated by the Soviet Union's Ministry of Atomic Power Industry [MAPI], which developed annual quotas for uranium production in each republic of the country. Uranium from the republics was sold to Techsnabexport [Tenex], the distribution and marketing arm of MAPI. Exports to other countries were handled strictly by Tenex.

  15. Progress in doping of ruthenium silicide (Ru2Si3)

    NASA Technical Reports Server (NTRS)

    Vining, C. B.; Allevato, C. E.

    1992-01-01

    Ruthenium silicide is currently under development as a promising thermoelectric material suitable for space power applications. Key to realizing the potentially high figure of merit values of this material is the development of appropriate doping techniques. In this study, manganese and iridium have been identified as useful p- and n-type dopants, respectively. Resistivity values have been reduced by more than 3 orders of magnitude. Anomalous Hall effect results, however, complicate interpretation of some of the results and further effort is required to achieve optimum doping levels.

  16. Progress in doping of ruthenium silicide (Ru2Si3)

    NASA Technical Reports Server (NTRS)

    Vining, C. B.; Allevato, C. E.

    1992-01-01

    Ruthenium silicide is currently under development as a promising thermoelectric material suitable for space power applications. Key to realizing the potentially high figure of merit values of this material is the development of appropriate doping techniques. In this study, manganese and iridium have been identified as useful p- and n-type dopants, respectively. Resistivity values have been reduced by more than 3 orders of magnitude. Anomalous Hall effect results, however, complicate interpretation of some of the results and further effort is required to achieve optimum doping levels.

  17. Nanomaterials of silicides and silicon for energy conversion and storage

    NASA Astrophysics Data System (ADS)

    Szczech, Jeannine Robin

    Our consumption of fossil fuels can be reduced to address the pressing concerns of global climate change by maximizing the efficiency of conversion technologies. Since many of the alternative fuel sources also being examined are intermittent in nature, it is imperative that high capacity and high power density storage devices are also developed. The conversion efficiency of current state-of-the-art thermoelectric materials is too low to meet our needs, but it may be possible to increase the conversion efficiency of thermoelectric materials by moving from the bulk to the nanoscale. The transition metal silicides, including CrSi2, beta-FeSi2 , Mg2Si and MnSi1.7, have been explored as environmentally friendly non-toxic thermoelectric materials. I began my research in the group synthesizing silicide nanowires via chemical vapor transport (CVT), and later expanded my research to include the synthesis of silicide nanocomposites for thermoelectrics and mesoporous silicon nanocomposites for use as high capacity lithium battery electrodes. Nanoscale thermoelectrics and the enhanced thermoelectric figure-of-merit ZT reported by thermoelectric researchers are reviewed in Chapter 1. Chapter 2 reviews the progress being made in the research community with nanoscale and nanostructured silicon battery anodes. The synthesis and characterization of CrSi2 nanowires synthesized via CVT is detailed in Chapter 3, followed by hyperbranched epitaxial FeSi nanostructures exhibiting merohedral twinning in Chapter 4. Nanowires are fundamentally interesting and provide insight into the changes in materials properties compared to the bulk. The synthesis of interesting nanostructured silicide materials are detailed in Chapter 5, where the conversion of diatoms into a nanostructured thermoelectric Mg2Si/MgO nanocomposite that retains the basic diatom structure after conversion is detailed. This reaction was then modified to use mesoporous silica instead of diatoms to reduce the nanocrystalline

  18. Some recent observations on the radiation behavior of uranium silicide dispersion fuel

    SciTech Connect

    Hofman, G.L.

    1988-01-01

    Addition of B{sub 4}C burnable poison results in higher plate swelling in both U{sub 3}Si{sub 2} and U{sub 3}Si-Al dispersion fuel plates and also decreases the blister threshold temperature of these plates. Prolonged annealing of U{sub 3}Si{sub 2}-Al fuel plates produced no blister after 696 hours at 400{degrees}C. Blister formation started between 257 hours and 327 hours at 425{degrees}C and between 115 hours and 210 hours at 450{degrees}C. Operation with breached cladding resulted in pillowing of an U{sub 3}Si-Al fuel plate due to reaction of the fuel core with coolant water. 4 refs., 10 figs., 2 tabs.

  19. Comparison of irradiation behavior of different uranium silicide dispersion fuel element designs

    SciTech Connect

    Hofman, G.L.; Rest, J.; Snelgrove, J.L.

    1995-01-01

    Calculations of fuel swelling of U{sub 3}SiAl-Al and U{sub 3}Si{sub 2} were performed for various dispersion fuel element designs. Breakaway swelling criteria in the form of critical fuel volume fractions were derived with data obtained from U{sub 3}SiAl-Al plate irradiations. The results of the analysis show that rod-type elements remain well below the pillowing threshold. However, tubular fuel elements, which behave essentially like plates, will likely develop pillows or blisters at around 90% {sup 235}U burnup. The U{sub 3}Si{sub 2}-Al compounds demonstrate stable swelling behavior throughout the entire burnup range for all fuel element designs.

  20. Thermal evaluation of uranium silicide miniplates irradiated at high heat flux

    SciTech Connect

    Donna P. Guillen

    2012-09-01

    The Gas Test Loop (GTL)-1 irradiation experiment was conducted in the Advanced Test Reactor (ATR) to assess corrosion performance of proposed booster fuel at heat flux levels ~30% above the design operating condition. Sixteen miniplates fabricated from 25% enriched, high-density (4.8 g U/cm3) U3Si2/Al dispersion fuel with 6061 aluminum cladding were subjected to peak beginning of cycle (BOC) heat fluxes ranging from 411 to 593 W/cm2. No adverse impacts to the miniplates were observed at these high heat flux levels. A detailed finite element model was constructed to calculate temperatures and heat flux for an as-run cycle average effective ATR south lobe power of 25.4 MW(t). Miniplate heat flux levels and fuel, cladding, hydroxide, and coolant–hydroxide interface temperatures were calculated using the average hydroxide thickness on each miniplate measured during post-irradiation examination. The purpose of this study was to obtain a best estimate of the as-run experiment temperatures to aid in establishing acceptable heat flux levels and designing fuel qualification experiments for this fuel type.

  1. A study of a zone approach to IAEA (International Atomic Energy Agency) safeguards: The low-enriched-uranium zone of a light-water-reactor fuel cycle

    SciTech Connect

    Fishbone, L.G.; Higinbotham, W.A.

    1986-06-01

    At present the IAEA designs its safeguards approach with regard to each type of nuclear facility so that the safeguards activities and effort are essentially the same for a given type and size of nuclear facility wherever it may be located. Conclusions regarding a state are derived by combining the conclusions regarding the effectiveness of safeguards for the individual facilities within a state. In this study it was convenient to define three zones in a state with a closed light-water-reactor nuclear fuel cycle. Each zone contains those facilities or parts thereof which use or process nuclear materials of the same safeguards significance: low-enriched uranium, radioactive spent fuel, or recovered plutonium. The possibility that each zone might be treated as an extended material balance area for safeguards purposes is under investigation. The approach includes defining the relevant features of the facilities in the three zones and listing the safeguards activities which are now practiced. This study has focussed on the fresh-fuel zone, the several facilities of which use or process low-enriched uranium. At one extreme, flows and inventories would be verified at each material balance area. At the other extreme, the flows into and out of the zone and the inventory of the whole zone would be verified. There are a number of possible safeguards approaches which fall between the two extremes. The intention is to develop a rational approach which will make it possible to compare the technical effectiveness and the inspection effort for the facility-oriented approach, for the approach involving the zone as a material balance area, and for some reasonable intermediate safeguards approaches.

  2. Rate Theory Modeling and Simulation of Silicide Fuel at LWR Conditions

    SciTech Connect

    Miao, Yinbin; Ye, Bei; Hofman, Gerard; Yacout, Abdellatif; Gamble, Kyle; Mei, Zhi-Gang

    2016-08-29

    As a promising candidate for the accident tolerant fuel (ATF) used in light water reactors (LWRs), the fuel performance of uranium silicide (U3Si2) at LWR conditions needs to be well understood. In this report, rate theory model was developed based on existing experimental data and density functional theory (DFT) calculations so as to predict the fission gas behavior in U3Si2 at LWR conditions. The fission gas behavior of U3Si2 can be divided into three temperature regimes. During steady-state operation, the majority of the fission gas stays in intragranular bubbles, whereas the dominance of intergranular bubbles and fission gas release only occurs beyond 1000 K. The steady-state rate theory model was also used as reference to establish a gaseous swelling correlation of U3Si2 for the BISON code. Meanwhile, the overpressurized bubble model was also developed so that the fission gas behavior at LOCA can be simulated. LOCA simulation showed that intragranular bubbles are still dominant after a 70 second LOCA, resulting in a controllable gaseous swelling. The fission gas behavior of U3Si2 at LWR conditions is benign according to the rate theory prediction at both steady-state and LOCA conditions, which provides important references to the qualification of U3Si2 as a LWR fuel material with excellent fuel performance and enhanced accident tolerance.

  3. Contributions to the geology of uranium and thorium by the United States Geological Survey and Atomic Energy Commission for the United Nations International Conference on Peaceful Uses of Atomic Energy, Geneva, Switzerland, 1955

    USGS Publications Warehouse

    Page, Lincoln R.; Stocking, Hobart E.; Smith, Harriet B.

    1956-01-01

    Within the boundaries of the United States abnormal amounts of uranium have been found in rocks of nearly all geologic ages and lithologic types. Distribution of ore is more restricted. On the Colorado Plateau, the Morrison formation of Jurassic age yields 61.4 percent of the ore produced in the United States, and the Chinle conglomerate and Shinarump formation of Triassic age contribute 26.0 and 5.8 percent, respectively. Clastic, carbonaceous, and carbonate sedimentary rocks of Tertiary, Mesozoic, and Paleozoic ages and veins of Tertiary age are the source of the remaining 6.8 percent.

  4. Matrix Infrared Spectroscopic and Computational Investigations of Novel Small Uranium Containing Molecules - Final Technical Report

    SciTech Connect

    Andrews, Lester

    2014-10-17

    Direct reactions of f-element uranium, thorium and lanthanide metal atoms were investigated with small molecules. These metal atoms were generated by laser ablation and mixed with the reagent molecules then condensed with noble gases at 4K. The products were analyzed by absorption of infrared light to measure vibrational frequencies which were confirmed by quantum chemical calculations. We have learned more about the reactivity of uranium atoms with common molecules, which will aid in the develolpment of further applications of uranium.

  5. PRODUCTION OF URANIUM MONOCARBIDE

    DOEpatents

    Powers, R.M.

    1962-07-24

    A method of making essentially stoichiometric uranium monocarbide by pelletizing a mixture of uranium tetrafluoride, silicon, and carbon and reacting the mixture at a temperature of approximately 1500 to 1700 deg C until the reaction goes to completion, forming uranium monocarbide powder and volatile silicon tetrafluoride, is described. The powder is then melted to produce uranium monocarbide in massive form. (AEC)

  6. PRODUCTION OF URANIUM TETRACHLORIDE

    DOEpatents

    Calkins, V.P.

    1958-12-16

    A process is descrlbed for the production of uranium tetrachloride by contacting uranlum values such as uranium hexafluoride, uranlum tetrafluoride, or uranium oxides with either aluminum chloride, boron chloride, or sodium alumlnum chloride under substantially anhydrous condltlons at such a temperature and pressure that the chlorldes are maintained in the molten form and until the uranium values are completely converted to uranlum tetrachloride.

  7. Transient and End Silicide Phase Formation in Thin Film Ni/polycrystalline-Si Reactions for Fully Silicided Gate Applications

    SciTech Connect

    Kittl,J.; Pawlak, M.; Torregiani, C.; Lauwers, A.; Demeurisse, C.; Vrancken, C.; Absil, P.; Biesemans, S.; Coia, C.; et. al

    2007-01-01

    The Ni/polycrystalline-Si thin film reaction was monitored by in situ x-ray diffraction during ramp annealings, obtaining a detailed view of the formation and evolution of silicide phases in stacks of interest for fully silicided gate applications. Samples consisted of Ni (30-170 nm)/polycrystalline-Si (100 nm)/SiO2 (10-30 nm) stacks deposited on (100) Si. The dominant end phase (after full silicidation) was found to be well controlled by the deposited Ni to polycrystalline-Si thickness ratio (tNi/tSi), with formation of NiSi2 ( {approx} 600 C), NiSi ( {approx} 400 C), Ni3Si2 ( {approx} 500 C), Ni2Si, Ni31Si12 ( {approx} 420 C), and Ni3Si ( {approx} 600 C) in stacks with tNi/tSi of 0.3, 0.6, 0.9, 1.2, 1.4, and 1.7, respectively. NiSi and Ni31Si12 were observed to precede formation of NiSi2 and Ni3Si, respectively, as expected for the phase sequence conventionally reported. Formation of Ni2Si was observed at early stages of the reaction. These studies revealed, in addition, the formation of transient phases that appeared and disappeared in narrow temperature ranges, competing with formation of the phases expected in the conventional phase sequence. These included the transient formation of NiSi and Ni31Si12 in stacks in which these phases are not expected to form (e.g., tNi/tSi of 1.7 and 0.9, respectively), at temperatures similar to those in which these phases normally grow.

  8. URANIUM EXTRACTION

    DOEpatents

    Harrington, C.D.; Opie, J.V.

    1958-07-01

    The recovery of uranium values from uranium ore such as pitchblende is described. The ore is first dissolved in nitric acid, and a water soluble nitrate is added as a salting out agent. The resulting feed solution is then contacted with diethyl ether, whereby the bulk of the uranyl nitrate and a portion of the impurities are taken up by the ether. This acid ether extract is then separated from the aqueous raffinate, and contacted with water causing back extractioa of the uranyl nitrate and impurities into the water to form a crude liquor. After separation from the ether extract, this crude liquor is heated to about 118 deg C to obtain molten uranyl nitrate hexahydratc. After being slightly cooled the uranyl nitrate hexahydrate is contacted with acid free diethyl ether whereby the bulk of the uranyl nitrate is dissolved into the ethcr to form a neutral ether solution while most of the impurities remain in the aqueous waste. After separation from the aqueous waste, the resultant ether solution is washed with about l0% of its volume of water to free it of any dissolved impurities and is then contacted with at least one half its volume of water whereby the uranyl nitrate is extracted into the water to form an aqueous product solution.

  9. Chemically enhanced ion etching on refractory metal silicides

    SciTech Connect

    O'Brien, W.L.; Rhodin, T.N.; Rathbun, L.C.

    1988-05-01

    Mechanisms of chemically enhanced ion etching on TiSi/sub 2/ and MoSi/sub 2/ were studied using high-resolution (250 ns) direct time-of-flight (TOF) spectroscopy and steady-state surface techniques (Auger electron spectroscopy and x-ray photoelectron spectroscopy). Argon ion pulses (4 ..mu..s, 0.2 mA/cm/sup 2/) were used in combination with a high-pressure chlorine gas doser (1 x 10/sup -5/ Torr) to study ion etchant product distributions. Ion product TOF distributions were interpreted in terms of the collisional cascade model with corrections for ionization probability. Surface chemical and compositional changes were measured after etching the silicide surfaces. Differences in TOF distributions of the same species from different substrates (e.g., Si from Si, TiSi/sub 2/ and MoSi/sub 2/) are discussed on the basis of these chemical and compositional changes. Etching mechanisms for the silicides are discussed by comparison to the etching of the elemental surfaces.

  10. Work function characterization of solution-processed cobalt silicide

    NASA Astrophysics Data System (ADS)

    Shihab Ullah, Syed; Robinson, Matt; Hoey, Justin; Sky Driver, M.; Caruso, A. N.; Schulz, Douglas L.

    2012-06-01

    Cobalt silicide thin films were prepared by spin-coating liquid cyclohexasilane-based inks onto silicon substrates followed by a thermal treatment. The work function of the solution-processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoemission spectroscopy (UPS). Variable frequency C-V of MOS structures with silicon oxide layers of variable thickness showed that solution-processed metal silicide films exhibit a work function of 4.36 eV with one Co-Si film on Si <1 0 0> giving a UPS-derived work function of 4.80 eV. Similar work function measurements were collected for vapor-deposited MOS capacitors where Al thin films were prepared according to standard class 100 cleanroom handling techniques. In both instances, the work function values established by the electrical measurements were lower than those measured by UPS and this difference appears to be a consequence of parasitic series resistance.

  11. Nonuniformity effects in a hybrid platinum silicide imaging device

    NASA Astrophysics Data System (ADS)

    Dereniak, E. L.; Perry, D. L.

    1991-09-01

    The objective of this project was twofold. The first objective was to characterize the Hughes Aircraft Company CRC-365 platinum silicide imaging device in a staring infrared sensor system. The CRC-365 is a hybrid 256 x 256 IR focal plane array that operates in the 3-5 micrometer thermal infrared band. A complete sensor and computer interface were built for these tests, using plans provided by the Rome Laboratory at Hanscom Air Force Base, Massachusetts. Testing of the device revealed largely satisfactory performance, with notable exceptions in the areas of temporal response, temporal noise, and electrical crosstalk. The second objective of this research was to advance the understanding of how detector nonuniformity effects reduce the performance of sensors of this type. Notable accomplishments in this included a complete linear analysis of corrected thermal imaging in platinum silicide sensors, a nonlinear analysis of the CRC-365s expected performance, analysis of its actual performance when operated with nonuniformity correction, and the development of a new figure of merit. It was demonstrated that the CRC-365 is capable of maintaining background-noise-limited performance over at least a 40 K target temperature range, when operated with two-point nonuniformity correction.

  12. Nonuniformity effects in a hybrid platinum silicide imaging device

    NASA Astrophysics Data System (ADS)

    Dereniak, Eustace L.; Perry, David L.

    1992-05-01

    The objective of this project was twofold. The first objective was to characterize the Hughes Aircraft Company CRC-365 platinum silicide imaging device in a starting infrared sensor system. The CRC-365 is a hybrid 256 x 256 IR focal plane array that operates in the 3-5 micrometer thermal infrared band. A complete sensor and computer interface were built for these tests, using, plans provided by the Rome Laboratory at Hanscom AFB. Testing of the device revealed largely satisfactory performance, with notable exception in the areas of temporal response, temporal noise, and electrical crosstalk. The second objective of this research was to advance the understanding of how detector nonuniformity effects reduce the performance of sensors of this type. Notable accomplishments in this area included a complete linear analysis of corrected thermal imaging in platinum silicide sensors, a nonlinear analysis of the CRC-365's expected performance, analysis of its actual performance when operated with nonuniformity correction, and the development of a new figure of merit. It was demonstrated that the CRC-365 is capable of maintaining background-noise-limited performance over at least a 40 K target temperature range, when operated with two-point nonuniformity correction.

  13. DECONTAMINATION OF URANIUM

    DOEpatents

    Feder, H.M.; Chellew, N.R.

    1958-02-01

    This patent deals with the separation of rare earth and other fission products from neutron bombarded uranium. This is accomplished by melting the uranium in contact with either thorium oxide, maguesium oxide, alumnum oxide, beryllium oxide, or uranium dioxide. The melting is preferably carried out at from 1150 deg to 1400 deg C in an inert atmosphere, such as argon or helium. During this treatment a scale of uranium dioxide forms on the uranium whtch contains most of the fission products.

  14. Superconductivity in uranium materials

    SciTech Connect

    Fish, Z.; Ott, H.R.

    1989-04-01

    Metallic uranium materials occupy an interesting niche that is intermediate between transition and f-electron materials. Uranium in different environments is able to span this entire range, with narrow d-bands replaced by f-bands when the U-U distances are close enough for direct f-orbital overlap (closer than the Hill spacing), and with localized f-electrons forming magnetically ordered materials in the other extreme of large U-U spacing. As the U-U spacing and, in compounds, the ligand atoms, change, an interesting continuum of physics develops connected with the changing f-character of the materials. Corresponding to changing U-U separation are large, but non-monotonic, changes of more than two orders of magnitude in the low-temperature electronic specific heat parameter /gamma/. This parameter is a measure of the electronic density of states at the Fermi level, and in the free-electron theory of metals as well as the Landau Fermi liquid, the magnetic susceptibility chi due to the conduction electrons is also proportional to the density of states at the Fermi level. It is useful to plot for various materials the measured /gamma/ versus the T /yields/ O K limiting chi to see how much the measured chi is present, so to speak, in /gamma/. The authors do this for most of the known uranium superconductors. The solid line plotted there is the free-electron expression relating /gamma/ and chi. For materials with anisotropic susceptibility, the horizontal span of values corresponds to the range of chi values.

  15. Continuous and Collective Grain Rotation in Nanoscale Thin Films during Silicidation

    NASA Astrophysics Data System (ADS)

    Richard, M.-I.; Fouet, J.; Texier, M.; Mocuta, C.; Guichet, C.; Thomas, O.

    2015-12-01

    Texture evolution is an important issue in materials and nanosciences. Understanding it is fundamental for controlling the final orientation, which in fine controls the desired properties of nanodevices. Here, we reveal the formation of a peculiar texture during the silicidation of nanoscale Pd thin films. We demonstrate that the crystallographic relationship observed between the silicide and the Si(001) substrate, named gyroaxy, evolves continuously and collectively during silicidation. This continuous rotation of the nanosized grains over a wide angular range is proposed to be associated with a diffusional mechanism.

  16. Process for stabilization of titanium silicide particulates within titanium aluminide containing metal matrix composites

    SciTech Connect

    Christodoulou, L.; Williams, J.C.; Riley, M.A.

    1990-04-10

    This paper describes a method for forming a final composite material comprising titanium silicide particles within a titanium aluminide containing matrix. It comprises: contacting titanium, silicon and aluminum at a temperature sufficient to initiate a reaction between the titanium and silicon to thereby form a first composite comprising titanium silicide particles dispersed within an aluminum matrix; admixing the first composite with titanium and zirconium to form a mixture; heating the mixture to a temperature sufficient to convert at least a portion of the aluminum matrix to titanium aluminide; and recovering a final composite material comprising titanium silicide particles dispersed within a titanium aluminide containing matrix.

  17. URANIUM DECONTAMINATION

    DOEpatents

    Buckingham, J.S.; Carroll, J.L.

    1959-12-22

    A process is described for reducing the extractability of ruthenium, zirconium, and niobium values into hexone contained in an aqueous nitric acid uranium-containing solution. The solution is made acid-deficient, heated to between 55 and 70 deg C, and at that temperature a water-soluble inorganic thiosulfate is added. By this, a precipitate is formed which carries the bulk of the ruthenium, and the remainder of the ruthenium as well as the zirconium and niobium are converted to a hexone-nonextractable form. The rutheniumcontaining precipitate can either be removed from the solu tion or it can be dissolved as a hexone-non-extractable compound by the addition of sodium dichromate prior to hexone extraction.

  18. Oxygen impurity effects at metal/silicide interfaces - Formation of silicon oxide and suboxides in the Ni/Si system

    NASA Technical Reports Server (NTRS)

    Grunthaner, P. J.; Grunthaner, F. J.; Scott, D. M.; Nicolet, M.-A.; Mayer, J. W.

    1981-01-01

    The effect of implanted oxygen impurities on the Ni/Ni2Si interface is investigated using X-ray photoelectron spectroscopy, He-4(+) backscattering and O(d, alpha)-16 N-14 nuclear reactions. Oxygen dosages corresponding to concentrations of 1, 2, and 3 atomic percent were implanted into Ni films evaporated on Si substrates. The oxygen, nickel, and silicon core lines were monitored as a function of time during in situ growth of the Ni silicide to determine the chemical nature of the diffusion barrier which forms in the presence of oxygen impurities. Analysis of the Ni, Si, and O core levels demonstrates that the formation of SiO2 is responsible for the Ni diffusion barrier rather than Ni oxide or mixed oxides, such as Ni2SiO4. It is determined that 2.2 x 10 to the 16th O/qu cm is sufficient to prevent Ni diffusion under UHV annealing conditions.

  19. Discrete breathers in alpha-uranium

    NASA Astrophysics Data System (ADS)

    Murzaev, Ramil T.; Babicheva, Rita I.; Zhou, Kun; Korznikova, Elena A.; Fomin, Sergey Yu.; Dubinko, Vladimir I.; Dmitriev, Sergey V.

    2016-07-01

    Uranium is an important radioactive material used in the field of nuclear energy and it is interesting from the scientific point of view because it possesses unique structure and properties. There exist several experimental reports on anomalies of physical properties of uranium that have not been yet explained. Manley et al. [Phys. Rev. Lett. 96, 125501 (2006); Phys. Rev. B 77, 214305 (2008)] speculate that the excitation of discrete breathers (DBs) could be the reason for anisotropy of thermal expansion and for the deviation of heat capacity from the theoretical prediction in the high temperature range. In the present work, with the use of molecular dynamics, the existence of DBs in α-uranium is demonstrated and their properties are studied. It is found that DB frequency lies above the phonon band and increases with DB amplitude. DB is localized on half a dozen of atoms belonging to a straight atomic chain. DB in uranium, unlike DBs in fcc, bcc and hcp metals, is almost immobile. Thus, the DB reported in this study cannot contribute to thermal conductivity and the search for other types of DBs in α-uranium should be continued. Our results demonstrate that even metals with low-symmetry crystal lattices such as the orthorhombic lattice of α-uranium can support DBs.

  20. Uranium hexafluoride bibliography

    SciTech Connect

    Burnham, S.L.

    1988-01-01

    This bibliography is a compilation of reports written about the transportation, handling, safety, and processing of uranium hexafluoride. An on-line literature search was executed using the DOE Energy files and the Nuclear Science Abstracts file to identify pertinent reports. The DOE Energy files contain unclassified information that is processed at the Office of Scientific and Technical Information of the US Department of Energy. The reports selected from these files were published between 1974 and 1983. Nuclear Science Abstracts contains unclassified international nuclear science and technology literature published from 1948 to 1976. In addition, scientific and technical reports published by the US Atomic Energy Commission and the US Energy Research and Development Administration, as well as those published by other agencies, universities, and industrial and research organizations, are included in the Nuclear Science Abstracts file. An alphabetical listing of the acronyms used to denote the corporate sponsors follows the bibliography.

  1. Uranium industry annual 1994

    SciTech Connect

    1995-07-05

    The Uranium Industry Annual 1994 (UIA 1994) provides current statistical data on the US uranium industry`s activities relating to uranium raw materials and uranium marketing during that survey year. The UIA 1994 is prepared for use by the Congress, Federal and State agencies, the uranium and nuclear electric utility industries, and the public. It contains data for the 10-year period 1985 through 1994 as collected on the Form EIA-858, ``Uranium Industry Annual Survey.`` Data collected on the ``Uranium Industry Annual Survey`` (UIAS) provide a comprehensive statistical characterization of the industry`s activities for the survey year and also include some information about industry`s plans and commitments for the near-term future. Where aggregate data are presented in the UIA 1994, care has been taken to protect the confidentiality of company-specific information while still conveying accurate and complete statistical data. A feature article, ``Comparison of Uranium Mill Tailings Reclamation in the United States and Canada,`` is included in the UIA 1994. Data on uranium raw materials activities including exploration activities and expenditures, EIA-estimated resources and reserves, mine production of uranium, production of uranium concentrate, and industry employment are presented in Chapter 1. Data on uranium marketing activities, including purchases of uranium and enrichment services, and uranium inventories, enrichment feed deliveries (actual and projected), and unfilled market requirements are shown in Chapter 2.

  2. Uranium industry annual 1998

    SciTech Connect

    1999-04-22

    The Uranium Industry Annual 1998 (UIA 1998) provides current statistical data on the US uranium industry`s activities relating to uranium raw materials and uranium marketing. It contains data for the period 1989 through 2008 as collected on the Form EIA-858, ``Uranium Industry Annual Survey.`` Data provides a comprehensive statistical characterization of the industry`s activities for the survey year and also include some information about industry`s plans and commitments for the near-term future. Data on uranium raw materials activities for 1989 through 1998, including exploration activities and expenditures, EIA-estimated reserves, mine production of uranium, production of uranium concentrate, and industry employment, are presented in Chapter 1. Data on uranium marketing activities for 1994 through 2008, including purchases of uranium and enrichment services, enrichment feed deliveries, uranium fuel assemblies, filled and unfilled market requirements, and uranium inventories, are shown in Chapter 2. The methodology used in the 1998 survey, including data edit and analysis, is described in Appendix A. The methodologies for estimation of resources and reserves are described in Appendix B. A list of respondents to the ``Uranium Industry Annual Survey`` is provided in Appendix C. The Form EIA-858 ``Uranium Industry Annual Survey`` is shown in Appendix D. For the readers convenience, metric versions of selected tables from Chapters 1 and 2 are presented in Appendix E along with the standard conversion factors used. A glossary of technical terms is at the end of the report. 24 figs., 56 tabs.

  3. Phase Formation and Thermoelectric Properties of Doped Higher Manganese Silicides (Mn15Si26)

    NASA Astrophysics Data System (ADS)

    Lee, Hwijong; Kim, Gwansik; Lee, Byunghun; Lee, Kyu Hyoung; Lee, Wooyoung

    2016-10-01

    We herein report substitutional doping effects on the electronic and thermal transport properties of higher manganese silicides (HMS) Mn15Si26. Polycrystalline bulks of Mn0.972A0.028Si1.80 and MnSi1.75B0.028 (A = V, Cr, Mo/B = Al, Ge) were fabricated by a solid-state reaction combined with the spark plasma sintering technique, and their thermoelectric properties were evaluated. We found that thermoelectric performance of Mn15Si26 was significantly enhanced due to the simultaneous improvement in electronic transport and phonon scattering via partial substitution of foreign atoms at Mn- and/or Si-sites. Through the small amount of Cr doping at the Mn-site and Al and Ge doping at the Si-site, the power factor was improved due to enhancement in density of the state's effective mass. Thermal transport properties could be also manipulated due to the point defect phonon scattering effect, and reduced lattice thermal conductivity was obtained with Ge-doped HMS. As a consequence, the maximum dimensionless figure of merit ZT of 0.64 at 773 K (increased 50% compared to undoped Mn15Si26) was obtained in Ge-doped Mn15Si26.

  4. Phase Formation and Thermoelectric Properties of Doped Higher Manganese Silicides (Mn15Si26)

    NASA Astrophysics Data System (ADS)

    Lee, Hwijong; Kim, Gwansik; Lee, Byunghun; Lee, Kyu Hyoung; Lee, Wooyoung

    2017-05-01

    We herein report substitutional doping effects on the electronic and thermal transport properties of higher manganese silicides (HMS) Mn15Si26. Polycrystalline bulks of Mn0.972A0.028Si1.80 and MnSi1.75B0.028 (A = V, Cr, Mo/B = Al, Ge) were fabricated by a solid-state reaction combined with the spark plasma sintering technique, and their thermoelectric properties were evaluated. We found that thermoelectric performance of Mn15Si26 was significantly enhanced due to the simultaneous improvement in electronic transport and phonon scattering via partial substitution of foreign atoms at Mn- and/or Si-sites. Through the small amount of Cr doping at the Mn-site and Al and Ge doping at the Si-site, the power factor was improved due to enhancement in density of the state's effective mass. Thermal transport properties could be also manipulated due to the point defect phonon scattering effect, and reduced lattice thermal conductivity was obtained with Ge-doped HMS. As a consequence, the maximum dimensionless figure of merit ZT of 0.64 at 773 K (increased 50% compared to undoped Mn15Si26) was obtained in Ge-doped Mn15Si26.

  5. Phase diagram and electrical behavior of silicon-rich iridium silicide compounds

    NASA Technical Reports Server (NTRS)

    Allevato, C. E.; Vining, Cronin B.

    1992-01-01

    The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi sub about 3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi sub about 3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83 +/- 1 atomic percent silicon was observed between IrSi sub about 3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi sub about 3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 x 10 exp -6 ohms-m.

  6. Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles.

    PubMed

    Sun, Hui; Wu, Hsuan-Chung; Chen, Sheng-Chi; Ma Lee, Che-Wei; Wang, Xin

    2017-12-01

    Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si films. In this present study, NiSi (20 nm)/Si (40 nm) and AlSi (20 nm)/Si (40 nm) bilayer thin films are deposited through radio frequency (RF) sputtering at room temperature. The influence of the film's composition and the annealing temperature on the film's optical absorption is investigated. The results show that all the NiSi/Si films and AlSi/Si films possess higher absorption ability compared to a pure a-Si film (60 nm). After annealing from 400 to 600 °C under vacuum for 1 h, the Si layer remains amorphous in both NiSi/Si films and AlSi/Si films, while the NiSi layer crystallizes into NiSi2 phase, whereas Al atoms diffuse through the whole film during the annealing process. Consequently, with increasing the annealing temperature, the optical absorption of NiSi/Si films increases, while that of AlSi/Si films obviously degrades.

  7. Phase diagram and electrical behavior of silicon-rich iridium silicide compounds

    NASA Technical Reports Server (NTRS)

    Allevato, C. E.; Vining, Cronin B.

    1992-01-01

    The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi sub about 3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi sub about 3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83 +/- 1 atomic percent silicon was observed between IrSi sub about 3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi sub about 3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 x 10 exp -6 ohms-m.

  8. Process for electroslag refining of uranium and uranium alloys

    DOEpatents

    Lewis, P.S. Jr.; Agee, W.A.; Bullock, J.S. IV; Condon, J.B.

    1975-07-22

    A process is described for electroslag refining of uranium and uranium alloys wherein molten uranium and uranium alloys are melted in a molten layer of a fluoride slag containing up to about 8 weight percent calcium metal. The calcium metal reduces oxides in the uranium and uranium alloys to provide them with an oxygen content of less than 100 parts per million. (auth)

  9. Local atomic structure of chromium bearing precipitates in chromia doped uranium dioxide investigated by combined micro-beam X-ray diffraction and absorption spectroscopy

    NASA Astrophysics Data System (ADS)

    Kuri, G.; Mieszczynski, C.; Martin, M.; Bertsch, J.; Borca, C. N.; Delafoy, Ch.

    2014-06-01

    Experimental studies have evidenced the presence of some chromium oxide precipitates in chromia (Cr2O3) doped UO2 fuels, currently being used in many light water reactors. The main objective of this study was to analyze the atomic scale microstructure of these precipitates in a non-destructive way employing modern synchrotron-based X-ray radiation. To investigate UO2 microstructures and chemical compositions of the precipitates an industrial grade fresh Cr2O3-doped UO2 pellet (produced with an initial amount of 0.16 wt.% Cr2O3 powder) was examined using scanning electron microscopy (SEM) and electron probe micro analysis (EPMA). Average grain diameter of the UO2 matrix was measured by SEM image analysis method. Precipitates were detected by EPMA. For all precipitates of micrometer scale analyzed by EPMA the composition was determined to be very close to Cr2O3. The structural property and the next neighbor Cr atomic environment in these precipitates were studied by a combination of more sensitive tools such as micro-focused X-ray diffraction (μ-XRD) and absorption spectroscopy (μ-XAS). According to the XRD data, the chromia precipitates contain structural disorder and have a somewhat distorted lattice structure as compared to that of standard and crystalline α-Cr2O3 hexagonal crystal unit cell. The μ-XAS results provide insight into the local atomic environment of chromium including the oxidation state assignment.

  10. PRODUCTION OF PURIFIED URANIUM

    DOEpatents

    Burris, L. Jr.; Knighton, J.B.; Feder, H.M.

    1960-01-26

    A pyrometallurgical method for processing nuclear reactor fuel elements containing uranium and fission products and for reducing uranium compound; to metallic uranium is reported. If the material proccssed is essentially metallic uranium, it is dissolved in zinc, the sulution is cooled to crystallize UZn/sub 9/ , and the UZn/sub 9/ is distilled to obtain uranium free of fission products. If the material processed is a uranium compound, the sollvent is an alloy of zinc and magnesium and the remaining steps are the same.

  11. URANIUM RECOVERY PROCESS

    DOEpatents

    Bailes, R.H.; Long, R.S.; Olson, R.S.; Kerlinger, H.O.

    1959-02-10

    A method is described for recovering uranium values from uranium bearing phosphate solutions such as are encountered in the manufacture of phosphate fertilizers. The solution is first treated with a reducing agent to obtain all the uranium in the tetravalent state. Following this reduction, the solution is treated to co-precipitate the rcduced uranium as a fluoride, together with other insoluble fluorides, thereby accomplishing a substantially complete recovery of even trace amounts of uranium from the phosphate solution. This precipitate usually takes the form of a complex fluoride precipitate, and after appropriate pre-treatment, the uranium fluorides are leached from this precipitate and rccovered from the leach solution.

  12. Controlled assembly of graphene-capped nickel, cobalt and iron silicides

    NASA Astrophysics Data System (ADS)

    Vilkov, O.; Fedorov, A.; Usachov, D.; Yashina, L. V.; Generalov, A. V.; Borygina, K.; Verbitskiy, N. I.; Grüneis, A.; Vyalikh, D. V.

    2013-07-01

    The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved.

  13. Controlled assembly of graphene-capped nickel, cobalt and iron silicides.

    PubMed

    Vilkov, O; Fedorov, A; Usachov, D; Yashina, L V; Generalov, A V; Borygina, K; Verbitskiy, N I; Grüneis, A; Vyalikh, D V

    2013-01-01

    The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved.

  14. Controlled assembly of graphene-capped nickel, cobalt and iron silicides

    PubMed Central

    Vilkov, O.; Fedorov, A.; Usachov, D.; Yashina, L. V.; Generalov, A. V.; Borygina, K.; Verbitskiy, N. I.; Grüneis, A.; Vyalikh, D. V.

    2013-01-01

    The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved. PMID:23835625

  15. Stacked silicide/silicon mid- to long-wavelength infrared detector

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph (Inventor)

    1990-01-01

    The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

  16. Stacked silicide/silicon mid- to long-wavelength infrared detector

    DOEpatents

    Maserjian, Joseph

    1990-03-13

    The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

  17. Synthetic Development of Metal Silicide Nanowires for Thermoelectric and Spintronic Applications

    NASA Astrophysics Data System (ADS)

    Higgins, Jeremy Michael

    2011-12-01

    Nanomaterials, including nanowires (NWs), are a new class of materials with the potential to lead to major changes in many aspects of human society. Innumerable applications for nanomaterials are envisioned or are being realized now. However, such new functionalities are and will continue to be predicated on our ability to precisely synthesize nanomaterials, a skill yet undeveloped in a majority of chemical systems. Metal silicides are a class of refractory intermetallic compounds composed of abundant elements with widely varying properties that are currently employed in a large range of technological applications. In this thesis, I describe my exploration of metal silicide NWs, particularly those in the Mn-Si binary system, in order to develop rational synthetic strategies for accessing binary and ternary silicide NWs and characterize their potential for thermoelectric and spintronic applications. Chapter 1 develops a common set of ideas and a common language before reviewing the current "state of the art" in silicide NW synthesis, exploring a number of the mysteries still surrounding silicide NW synthesis, and presenting silicide NW applications. Chapter 2 depicts the use of Mn(CO) 5SiCl3 as the vapor phase precursor to synthesize higher manganese silicide NWs (also known as HMS, MnSi˜1.7 MnSi2--x) for the first time, the identification of the NW subphase as Mn19Si33, and conductivity measurement on HMS NWs revealing bulk-like behavior. Chapter 3 describes employing MnCl 2 as the precursor for the first successful synthesis of MnSi NWs and transverse magnetoresistance measurements on these MnSi NWs to observe the signatures of helimagnetism in NWs for the first time. Chapter 4 is a systematic examination of silicide NW synthesis by single source precursor chemical vapor deposition, highlighting the complex interplay of substrate diffusion and vapor phase reactivity giving rise to material incorporation in silicide NWs. Chapter 5 details the direct reaction of Mn

  18. Work function characterization of solution-processed cobalt silicide

    DOE PAGES

    Ullah, Syed Shihab; Robinson, Matt; Hoey, Justin; ...

    2012-05-08

    Cobalt silicide thin films were prepared by spin-coating Si6H12-based inks onto various substrates followed by a thermal treatment. The work function of the solution processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoelectron spectroscopy (UPS). The UPS-derived work function was 4.80 eV for a Co-Si film on Si (100) while C-V of MOS structures yielded a work function of 4.36 eV where the metal was solution-processed Co-Si, the oxide was SiO2 and the semiconductor was a B-doped Si wafer.

  19. Europium Silicide – a Prospective Material for Contacts with Silicon

    NASA Astrophysics Data System (ADS)

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-05-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

  20. Silicide formation and the generation of point defects in silicon

    NASA Astrophysics Data System (ADS)

    Svensson, B. G.; Aboelfotoh, M. O.; Lindström, J. L.

    1991-06-01

    The annealing behavior of the divacancy (V2) acceptor levels in silicon is investigated with the use of Schottky-barrier structures formed by the deposition of copper on n-type silicon irradiated with 2-MeV electrons. At temperatures below ~150 °C an anomalously high annealing rate of the V2 centers is observed, and we believe that the fast-diffusing interstitial Cu+ passivates their electrical activity and forms neutral complexes. In the temperature range 150-200 °C, where the metal-rich silicide η'-Cu3Si forms, the concentration of V2 remains almost constant, and we find no evidence for the injection of silicon self-interstitials during the formation of η'-Cu3Si, in contrast to recent experiments.

  1. Capping of rare earth silicide nanowires on Si(001)

    SciTech Connect

    Appelfeller, Stephan; Franz, Martin; Kubicki, Milan; Dähne, Mario; Reiß, Paul; Niermann, Tore; Lehmann, Michael; Schubert, Markus Andreas

    2016-01-04

    The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires.

  2. A DFT study of hypercoordinated copper silicide nanotubes

    NASA Astrophysics Data System (ADS)

    Ai, Ling-Yan; Zhao, Hui-Yan; Wang, Jing; Liu, Ying

    2017-03-01

    The stability and electronic structures of copper silicide nanotubes (CuSiNTs) are calculated using first-principles density functional theory. Here these CuSiNTs of various different diameters, chiral vectors and morphologies were obtained by rolling up a novel two-dimensional hypercoordinated Cu2Si monolayer with high stability (Yang et al., J. Am. Chem. Soc. 137 (2015) 2757-2762). Electronic structure calculations showed that these CuSiNTs are conductors independent of their chiral vectors, diameters and morphologies. In addition, molecular dynamics (MD) simulations of the (6, 0) tube and the (8, 4) tube were performed. It was found that the (8, 4) tube has very good thermal stability and that its structure does not break down during MD simulations at initial temperatures up to 1500 K. Based on their electrical conductivity and good thermal stability, these CuSiNTs are promising candidates to envision application as metallic connections in nanoscale electronic devices.

  3. Silicon-nanowire transistors with intruded nickel-silicide contacts.

    PubMed

    Weber, Walter M; Geelhaar, Lutz; Graham, Andrew P; Unger, Eugen; Duesberg, Georg S; Liebau, Maik; Pamler, Werner; Chèze, Caroline; Riechert, Henning; Lugli, Paolo; Kreupl, Franz

    2006-12-01

    Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 10(7). The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 microm, and decreased exponentially for gate lengths exceeding 1 microm.

  4. Pt redistribution during Ni(Pt) silicide formation

    SciTech Connect

    Demeulemeester, J.; Smeets, D.; Vantomme, A.; Van Bockstael, C.; Detavernier, C.; Comrie, C. M.; Barradas, N. P.; Vieira, A.

    2008-12-29

    We report on a real-time Rutherford backscattering spectrometry study of the erratic redistribution of Pt during Ni silicide formation in a solid phase reaction. The inhomogeneous Pt redistribution in Ni(Pt)Si films is a consequence of the low solubility of Pt in Ni{sub 2}Si compared to NiSi and the limited mobility of Pt in NiSi. Pt further acts as a diffusion barrier and resides in the Ni{sub 2}Si grain boundaries, significantly slowing down the Ni{sub 2}Si and NiSi growth kinetics. Moreover, the observed incorporation of a large amount of Pt in the NiSi seeds indicates that Pt plays a major role in selecting the crystallographic orientation of these seeds and thus in the texture of the resulting Ni{sub 1-x}Pt{sub x}Si film.

  5. Silicide/silicon Schottky barriers under hydrostatic pressure

    NASA Astrophysics Data System (ADS)

    Werner, Jürgen H.

    1989-04-01

    We investigate several silicide/silicon Schottky barrier heights under hydrostatic pressures up to 10 kbar. The barriers of polycrystalline TiSi2, PtSi, and WTi on n-type Si decrease with -1.l3, -1.35, and -1.42 meV/kbar, respectively. The coefficients for A- and B-type NiSi2/Si amount to -0.77 and -0.89 meV/kbar and are too small to support models which ascribe the l40 meV barrier difference of these two types to different interface bond lengths. The pressure coefficients are, on the other hand, within a range of predictions of Cardona and Christensen which are based on pure bulk properties.

  6. Europium Silicide – a Prospective Material for Contacts with Silicon

    PubMed Central

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-01-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

  7. Controlled formation and resistivity scaling of nickel silicide nanolines.

    PubMed

    Li, Bin; Luo, Zhiquan; Shi, Li; Zhou, JiPing; Rabenberg, Lew; Ho, Paul S; Allen, Richard A; Cresswell, Michael W

    2009-02-25

    We demonstrate a top-down method for fabricating nickel mono-silicide (NiSi) nanolines (also referred to as nanowires) with smooth sidewalls and line widths down to 15 nm. Four-probe electrical measurements reveal that the room temperature electrical resistivity of the NiSi nanolines remains constant as the line widths are reduced to 23 nm. The resistivity at cryogenic temperatures is found to increase with decreasing line width. This finding can be attributed to electron scattering at the sidewalls and is used to deduce an electron mean free path of 6.3 nm for NiSi at room temperature. The results suggest that NiSi nanolines with smooth sidewalls are able to meet the requirements for implementation at the 22 nm technology node without degradation of device performance.

  8. Descriptive models of major uranium deposits in China - Some results of the Workshop on Uranium Resource Assessment sponsored by the International Atomic Energy Agency, Vienna, Austria, in cooperation with China National Nuclear Corporation, Beijing, and the U.S. Geological Survey, Denver, Colorado, and Reston, Virginia

    USGS Publications Warehouse

    Finch, W.I.; Feng, S.; Zuyi, C.; McCammon, R.B.

    1993-01-01

    Four major types of uranium deposits occur in China: granite, volcanic, sandstone, and carbonaceous-siliceous-pelitic rock. These types are major sources of uranium in many parts of the world and account for about 95 percent of Chinese production. Descriptive models for each of these types record the diagnostic regional and local geologic features of the deposits that are important to genetic studies, exploration, and resource assessment. A fifth type of uranium deposit, metasomatite, is also modeled because of its high potential for production. These five types of uranium deposits occur irregularly in five tectonic provinces distributed from the northwest through central to southern China. ?? 1993 Oxford University Press.

  9. Copper silicide formation by rapid thermal processing and induced room-temperature Si oxide growth

    NASA Astrophysics Data System (ADS)

    Setton, M.; Van der Spiegel, J.; Rothman, B.

    1990-07-01

    The growth of copper silicide has been studied by rapid thermal processing (RTP) of 500 Å of Cu on Si substrates. Interaction between the diffusing metal and Si starts at 250-300 °C. Annealing at higher temperatures yields complete silicidation to Cu3Si. This leads to strong modifications of the Auger line shapes of both Si and Cu. A plasmon peak located 20 eV below the main peak is the fingerprint in the Cu spectrum. Strong features at 80, 85.6, 89.2, and 93.2 eV as well as a 1 eV shift of the 90.4 eV peak appear in the Si L2,3VV spectrum. Whether for Cu films annealed in nitrogen or in vacuum, exposure of the silicide to air results in the growth of silicon oxide at room temperature and continues until the silicide layer is totally converted. This repeatable and controllable oxidation of silicon is accompanied by changes in resistivity and color reflecting the extent of the process. For Cu/CoSi2/Si structures, the cobalt silicide acts as a transport medium for the growth of the copper silicide and also serves as a cap preventing the oxidation of the final CoSi2/Cu3Si/Si contacts

  10. Synthesis and design of silicide intermetallic materials. 1998 annual progress report

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.; Park, Y.; Vaidya, R.U.; Hollis, K.J.; Kung, H.H.

    1999-03-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the US processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive US processing industries. The program presently has a number of developing industrial connections, including a CRADA with Johns Manville Corporation targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. With Combustion Technology Inc., they are developing silicide-based periscope sight tubes for the direct observation of glass melts. With Accutru International Corporation, they are developing silicide-based protective sheaths for self-verifying temperature sensors which may be used in glass furnaces and other industrial applications. The progress made on the program in this period is summarized.

  11. NUSIMEP-7: uranium isotope amount ratios in uranium particles.

    PubMed

    Truyens, J; Stefaniak, E A; Aregbe, Y

    2013-11-01

    The Institute for Reference Materials and Measurements (IRMM) has extensive experience in the development of isotopic reference materials and the organization of interlaboratory comparisons (ILC) for nuclear measurements in compliance with the respective international guidelines (ISO Guide 34:2009 and ISO/IEC 17043:2010). The IRMM Nuclear Signatures Interlaboratory Measurement Evaluation Program (NUSIMEP) is an external quality control program with the objective of providing materials for measurements of trace amounts of nuclear materials in environmental matrices. Measurements of the isotopic ratios of the elements uranium and plutonium in small amounts, typical of those found in environmental samples, are required for nuclear safeguards and security, for the control of environmental contamination and for the detection of nuclear proliferation. The measurement results of participants in NUSIMEP are evaluated according to international guidelines in comparison to independent external certified reference values with demonstrated metrological traceability and uncertainty. NUSIMEP-7 focused on measurements of uranium isotope amount ratios in uranium particles aiming to support European Safeguards Directorate General for Energy (DG ENER), the International Atomic Energy Agency's (IAEA) network of analytical laboratories for environmental sampling (NWAL) and laboratories in the field of particle analysis. Each participant was provided two certified test samples: one with single and one with double isotopic enrichment. These NUSIMEP test samples were prepared by controlled hydrolysis of certified uranium hexafluoride in a specially designed aerosol deposition chamber at IRMM. Laboratories participating in NUSIMEP-7 received the test samples of uranium particles on two graphite disks with undisclosed isotopic ratio values n((234)U)/n((238)U), n((235)U)/n((238)U) and n((236)U)/n((238)U). The uranium isotope ratios had to be measured using their routine analytical

  12. METHOD FOR PURIFYING URANIUM

    DOEpatents

    Knighton, J.B.; Feder, H.M.

    1960-04-26

    A process is given for purifying a uranium-base nuclear material. The nuclear material is dissolved in zinc or a zinc-magnesium alloy and the concentration of magnesium is increased until uranium precipitates.

  13. NICKEL COATED URANIUM ARTICLE

    DOEpatents

    Gray, A.G.

    1958-10-01

    Nickel coatings on uranium and various methods of obtaining such coatings are described. Specifically disclosed are such nickel or nickel alloy layers as barriers between uranium and aluminum- silicon, chromium, or copper coatings.

  14. Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

    SciTech Connect

    Ozcan, Ahmet S.; Wall, Donald; Jordan-Sweet, Jean; Lavoie, Christian

    2013-04-29

    Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.

  15. On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

    SciTech Connect

    Glushkov, G. I.; Tuchin, A. V.; Popov, S. V.; Bityutskaya, L. A.

    2015-12-15

    Theoretical investigations of the electronic structure, synthesis, and all-optical magnetization switching of transition-metal silicide nanostructures are reported. The magnetic moment of the nanostructures is studied as a function of the silicide cluster size and configuration. The experimentally demonstrated magnetization switching of nanostructured nickel silicide by circularly polarized light makes it possible to create high-speed storage devices with high density data recording.

  16. Organic geochemical analysis of sedimentary organic matter associated with uranium

    USGS Publications Warehouse

    Leventhal, J.S.; Daws, T.A.; Frye, J.S.

    1986-01-01

    Samples of sedimentary organic matter from several geologic environments and ages which are enriched in uranium (56 ppm to 12%) have been characterized. The three analytical techniqyes used to study the samples were Rock-Eval pyrolysis, pyrolysis-gas chromatography-mass spectrometry, and solid-state C-13 nuclear magnetic resonance (NMR) spectroscopy. In samples with low uranium content, the pyrolysis-gas chromatography products contain oxygenated functional groups (as hydroxyl) and molecules with both aliphatic and aromatic carbon atoms. These samples with low uranium content give measurable Rock-Eval hydrocarbon and organic-CO2 yields, and C-13 NMR values of > 30% aliphatic carbon. In contrast, uranium-rich samples have few hydrocarbon pyrolysis products, increased Rock-Eval organic-CO2 contents and > 70% aromatic carbon contents from C-13 NMR. The increase in aromaticity and decrease in hydrocarbon pyrolysis yield are related to the amount of uranium and the age of the uranium minerals, which correspond to the degree of radiation damage. The three analytical techniques give complementary results. Increase in Rock-Eval organic-CO2 yield correlates with uranium content for samples from the Grants uranium region. Calculations show that the amount of organic-CO2 corresponds to the quantity of uranium chemically reduced by the organic matter for the Grants uranium region samples. ?? 1986.

  17. PROCESS OF PURIFYING URANIUM

    DOEpatents

    Seaborg, G.T.; Orlemann, E.F.; Jensen, L.H.

    1958-12-23

    A method of obtaining substantially pure uranium from a uranium composition contaminated with light element impurities such as sodium, magnesium, beryllium, and the like is described. An acidic aqueous solution containing tetravalent uranium is treated with a soluble molybdate to form insoluble uranous molybdate which is removed. This material after washing is dissolved in concentrated nitric acid to obtaln a uranyl nitrate solution from which highly purified uranium is obtained by extraction with ether.

  18. Uranium industry annual 1995

    SciTech Connect

    1996-05-01

    The Uranium Industry Annual 1995 (UIA 1995) provides current statistical data on the U.S. uranium industry`s activities relating to uranium raw materials and uranium marketing. The UIA 1995 is prepared for use by the Congress, Federal and State agencies, the uranium and nuclear electric utility industries, and the public. It contains data for the period 1986 through 2005 as collected on the Form EIA-858, ``Uranium Industry Annual Survey``. Data collected on the ``Uranium Industry Annual Survey`` provide a comprehensive statistical characterization of the industry`s plans and commitments for the near-term future. Where aggregate data are presented in the UIA 1995, care has been taken to protect the confidentiality of company-specific information while still conveying accurate and complete statistical data. Data on uranium raw materials activities for 1986 through 1995 including exploration activities and expenditures, EIA-estimated reserves, mine production of uranium, production of uranium concentrate, and industry employment are presented in Chapter 1. Data on uranium marketing activities for 1994 through 2005, including purchases of uranium and enrichment services, enrichment feed deliveries, uranium fuel assemblies, filled and unfilled market requirements, uranium imports and exports, and uranium inventories are shown in Chapter 2. The methodology used in the 1995 survey, including data edit and analysis, is described in Appendix A. The methodologies for estimation of resources and reserves are described in Appendix B. A list of respondents to the ``Uranium Industry Annual Survey`` is provided in Appendix C. For the reader`s convenience, metric versions of selected tables from Chapters 1 and 2 are presented in Appendix D along with the standard conversion factors used. A glossary of technical terms is at the end of the report. 14 figs., 56 tabs.

  19. PREPARATION OF URANIUM HEXAFLUORIDE

    DOEpatents

    Lawroski, S.; Jonke, A.A.; Steunenberg, R.K.

    1959-10-01

    A process is described for preparing uranium hexafluoride from carbonate- leach uranium ore concentrate. The briquetted, crushed, and screened concentrate is reacted with hydrogen fluoride in a fluidized bed, and the uranium tetrafluoride formed is mixed with a solid diluent, such as calcium fluoride. This mixture is fluorinated with fluorine and an inert diluent gas, also in a fluidized bed, and the uranium hexafluoride obtained is finally purified by fractional distillation.

  20. PRODUCTION OF URANIUM TETRAFLUORIDE

    DOEpatents

    Shaw, W.E.; Spenceley, R.M.; Teetzel, F.M.

    1959-08-01

    A method is presented for producing uranium tetrafluoride from the gaseous hexafluoride by feeding the hexafluoride into a high temperature zone obtained by the recombination of molecularly dissociated hydrogen. The molal ratio of hydrogen to uranium hexnfluoride is preferably about 3 to 1. Uranium tetrafluoride is obtained in a finely divided, anhydrous state.

  1. Structure and phase transformations in uranium metal

    NASA Astrophysics Data System (ADS)

    Axe, J. D.; Gruebel, G.; Lander, G. H.

    1994-10-01

    In common with other elemental actinides, metallic uranium exists in several allotropic forms, differing from one another by complex but subtle atomic rearrangements. This article reviews progress in understanding the successive phase transformations from the perspective of soft-mode instabilities.

  2. Structure and phase transformations in uranium metal

    SciTech Connect

    Axe, J.D.; Gruebel, G.; Lander, G.H.

    1993-12-01

    In common with other elemental actinides, metallic uranium exists in several allotropic forms, differing from one another by complex but subtle atomic rearrangements. This article reviews progress in understanding the successive phase transformations from the perspective of soft-mode instabilities.

  3. PROCESS OF RECOVERING URANIUM

    DOEpatents

    Carter, J.M.; Larson, C.E.

    1958-10-01

    A process is presented for recovering uranium values from calutron deposits. The process consists in treating such deposits to produce an oxidlzed acidic solution containing uranium together with the following imparities: Cu, Fe, Cr, Ni, Mn, Zn. The uranium is recovered from such an impurity-bearing solution by adjusting the pH of the solution to the range 1.5 to 3.0 and then treating the solution with hydrogen peroxide. This results in the precipitation of uranium peroxide which is substantially free of the metal impurities in the solution. The peroxide precipitate is then separated from the solution, washed, and calcined to produce uranium trioxide.

  4. URANIUM SEPARATION PROCESS

    DOEpatents

    Hyde, E.K.; Katzin, L.I.; Wolf, M.J.

    1959-07-14

    The separation of uranium from a mixture of uranium and thorium by organic solvent extraction from an aqueous solution is described. The uranium is separrted from an aqueous mixture of uranium and thorium nitrates 3 N in nitric acid and containing salting out agents such as ammonium nitrate, so as to bring ihe total nitrate ion concentration to a maximum of about 8 N by contacting the mixture with an immiscible aliphatic oxygen containing organic solvent such as diethyl carbinol, hexone, n-amyl acetate and the like. The uranium values may be recovered from the organic phase by back extraction with water.

  5. URANIUM RECOVERY PROCESS

    DOEpatents

    Yeager, J.H.

    1958-08-12

    In the prior art processing of uranium ores, the ore is flrst digested with nitric acid and filtered, and the uranium values are then extracted tom the filtrate by contacting with an organic solvent. The insoluble residue has been processed separately in order to recover any uranium which it might contain. The improvement consists in contacting a slurry, composed of both solution and residue, with the organic solvent prior to filtration. Tbe result is that uranium values contained in the residue are extracted along with the uranium values contained th the solution in one step.

  6. PRODUCTION OF URANIUM

    DOEpatents

    Spedding, F.H.; Wilhelm, H.A.; Keller, W.H.

    1958-04-15

    The production of uranium metal by the reduction of uranium tetrafluoride is described. Massive uranium metal of high purily is produced by reacting uranium tetrafluoride with 2 to 20% stoichiometric excess of magnesium at a temperature sufficient to promote the reaction and then mantaining the reaction mass in a sealed vessel at temperature in the range of 1150 to 2000 d C, under a superatomospheric pressure of magnesium for a period of time sufficient 10 allow separation of liquid uranium and liquid magnesium fluoride into separate layers.

  7. Method for converting uranium oxides to uranium metal

    DOEpatents

    Duerksen, Walter K.

    1988-01-01

    A process is described for converting scrap and waste uranium oxide to uranium metal. The uranium oxide is sequentially reduced with a suitable reducing agent to a mixture of uranium metal and oxide products. The uranium metal is then converted to uranium hydride and the uranium hydride-containing mixture is then cooled to a temperature less than -100.degree. C. in an inert liquid which renders the uranium hydride ferromagnetic. The uranium hydride is then magnetically separated from the cooled mixture. The separated uranium hydride is readily converted to uranium metal by heating in an inert atmosphere. This process is environmentally acceptable and eliminates the use of hydrogen fluoride as well as the explosive conditions encountered in the previously employed bomb-reduction processes utilized for converting uranium oxides to uranium metal.

  8. 31 CFR 540.317 - Uranium feed; natural uranium feed.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Uranium feed; natural uranium feed... (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.317 Uranium feed; natural uranium feed. The...

  9. 31 CFR 540.317 - Uranium feed; natural uranium feed.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Uranium feed; natural uranium feed... (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.317 Uranium feed; natural uranium feed. The...

  10. 31 CFR 540.317 - Uranium feed; natural uranium feed.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Uranium feed; natural uranium feed... (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.317 Uranium feed; natural uranium feed. The...

  11. Multiphoton ionization of uranium hexafluoride

    NASA Astrophysics Data System (ADS)

    Armstrong, D. P.; Harkins, D. A.; Compton, R. N.; Ding, D.

    1994-01-01

    Multiphoton ionization (MPI) time-of-flight mass spectroscopy (TOFMS) and photoelectron spectroscopy (PES) studies of UF6 are reported using focused light from the Nd:YAG laser fundamental (λ=1064 nm) and its harmonics (λ=532, 355, or 266 nm), as well as other wavelengths provided by a tunable dye laser. The MPI mass spectra are dominated by the singly and multiply charged uranium ions rather than by the UF+x fragment ions, even at the lowest laser power densities at which signal could be detected. In general, the doubly charged uranium ion (U2+) intensity is much greater than that of the singly charged uranium ion (U+). For the case of the tunable dye laser experiments, the Un+ (n=1-4) wavelength dependence is relatively unstructured and does not show observable resonance enhancement at known atomic uranium excitation wavelengths. The MPI-PES studies reveal only very slow electrons (≤0.5 eV) for all wavelengths investigated. The dominance of the U2+ ion, the absence or very small intensities of UF+x (x=1-3) fragments, the unstructured wavelength dependence, and the preponderance of slow electrons all indicate that mechanisms may exist other than ionization of bare U atoms following the stepwise photodissociation of F atoms from the parent molecule. The data also argue against stepwise photodissociation of UF+x (x=5,6) ions. Neither of the traditional MPI mechanisms (``neutral ladder'' or the ``ionic ladder'') are believed to adequately describe the ionization phenomena observed. We propose that the multiphoton excitation of UF6 under these experimental conditions results in a highly excited molecule, superexcited UF6**. The excitation of highly excited UF6** is proposed to be facilitated by the well known ``giant resonance,'' whose energy level lies in the range of 12-14 eV above that of ground state UF6. The highly excited molecule then primarily dissociates, via multiple channels, into Un+, UF+x, fluorine atoms, and ``slow'' electrons, although dissociation

  12. Risk assessment applications for determining cleanup limits for uranium in treated and untreated soils

    SciTech Connect

    Armstrong, A.Q.; Layton, D.W.; Rutz, E.E.

    1994-06-01

    Uranium-contaminated soils are present at various locations across the US where uranium was processed for nuclear fuels or atomic weapons. Important issues relative to such contamination include the assessment of potential health risks associated with human exposures to the residual uranium and the determination of safe levels of uranium in soils that have been treated by a given technology. This paper discusses various risk assessment considerations that must be dealt with when developing cleanup limits for uranium in treated and untreated soils. Key issues addressed include alternative land use scenarios, potential exposure pathways, characterization of the bioavailability of uranium compounds in food and water, a brief overview of health risks associated with uranium and its daughter products as well as a summary of considerations for development of risk-based cleanup limits for uranium in soils.

  13. Plane-wave pseudopotential study of point defects in uranium dioxide

    NASA Astrophysics Data System (ADS)

    Crocombette, J. P.; Jollet, F.; Nga, L. Thien; Petit, T.

    2001-09-01

    A study on uranium and oxygen point defects in uranium dioxide using the ab initio plane-wave pseudopotential method in the local density approximation of the density functional theoretical framework is presented. Norm conserving pseudopotentials are used to describe oxygen and uranium atoms. The uranium pseudopotential is specifically described. Its validity is ascertained thanks to a detailed structural study of uranium dioxide and of three phases of metallic uranium (fcc, bcc, and α phase). The free energies of formation of both intrinsic (Frenkel pairs and Schottky defect) and extrinsic (single vacancies or interstitials) defects are calculated. The obtained values form a reliable set of numerical data that are analyzed in the framework of the point defect model which is commonly used to assess defect concentrations in uranium dioxide and their variation with stoichiometry. From the obtained results, the ability of the point defect model to accurately reproduce defect concentrations in uranium dioxide is discussed.

  14. Welding of uranium and uranium alloys

    SciTech Connect

    Mara, G.L.; Murphy, J.L.

    1982-03-26

    The major reported work on joining uranium comes from the USA, Great Britain, France and the USSR. The driving force for producing this technology base stems from the uses of uranium as a nuclear fuel for energy production, compact structures requiring high density, projectiles, radiation shielding, and nuclear weapons. This review examines the state-of-the-art of this technology and presents current welding process and parameter information. The welding metallurgy of uranium and the influence of microstructure on mechanical properties is developed for a number of the more commonly used welding processes.

  15. Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Yoshinori; Yoshiki, Masahiko; Koga, Junji; Nishiyama, Akira; Koyama, Masato

    2009-08-01

    Influences of Ni silicide phases on the effective work function (Φeff) modulation effect with Al incorporation has been investigated in the Ni silicide/HfSiON systems. We formed metal-insulator-semiconductor capacitors with Al incorporated Ni silicide (NiSi, Ni2Si, and Ni3Si) gates on HfSiON by Al solid-phase diffusion (Al-SPD) process or Al ion implantation (I/I) process. In the Al-SPD process, Al is deposited on Ni silicide gate. In the Al-I/I process, Al ions were doped in the upper part of Ni silicide layer. In both cases, we performed Al drive-in annealing under the condition of 450 °C for 30 min in N2 ambient. It is found that the flat-band voltage (Vfb) values of Al incorporated NiSi and Ni2Si gates shift negatively and identical independent of Al incorporation processes. A highly concentrated Al piled-up layer, which induces Φeff modulation to Al-Φeff value, seems to correspond to the Vfb modulation. On the other hand, Al incorporation has little influence on Φeff at the Ni3Si/HfSiON interface. We revealed that a lower Al diffusion coefficient in Ni3Si phase reduces the Al interface density at the Ni3Si/HfSiON interface. In addition, Al piled-up layer is inherently unstable at the Ni3Si/HfSiON interface, which is confirmed from the detailed investigation about thermal stability of Al piled-up layer by using phase change process from NiSi to Ni3Si phase.

  16. The multiphoton ionization of uranium hexafluoride

    SciTech Connect

    Armstrong, D.P. . UEO Enrichment Technical Operations Div.)

    1992-05-01

    Multiphoton ionization (MPI) time-of-flight mass spectroscopy and photoelectron spectroscopy studies of UF{sub 6} have been conducted using focused light from the Nd:YAG laser fundamental ({lambda}=1064 nm) and its harmonics ({lambda}=532, 355, or 266 nm), as well as other wavelengths provided by a tunable dye laser. The MPI mass spectra are dominated by the singly and multiply charged uranium ions rather than by the UF{sub x}{sup +} fragment ions even at the lowest laser power densities at which signal could be detected. The laser power dependence of U{sup n+} ions signals indicates that saturation can occur for many of the steps required for their ionization. In general, the doubly-charged uranium ion (U{sup 2+}) intensity is much greater than that of the singly-charged uranium ion (U{sup +}). For the case of the tunable dye laser experiments, the U{sup n+} (n = 1- 4) wavelength dependence is relatively unstructured and does not show observable resonance enhancement at known atomic uranium excitation wavelengths. The dominance of the U{sup 2+} ion and the absence or very small intensities of UF{sub x}{sup +} fragments, along with the unsaturated wavelength dependence, indicate that mechanisms may exist other than ionization of bare U atoms after the stepwise photodissociation of F atoms from the parent molecule.

  17. Uranium hexafluoride public risk

    SciTech Connect

    Fisher, D.R.; Hui, T.E.; Yurconic, M.; Johnson, J.R.

    1994-08-01

    The limiting value for uranium toxicity in a human being should be based on the concentration of uranium (U) in the kidneys. The threshold for nephrotoxicity appears to lie very near 3 {mu}g U per gram kidney tissue. There does not appear to be strong scientific support for any other improved estimate, either higher or lower than this, of the threshold for uranium nephrotoxicity in a human being. The value 3 {mu}g U per gram kidney is the concentration that results from a single intake of about 30 mg soluble uranium by inhalation (assuming the metabolism of a standard person). The concentration of uranium continues to increase in the kidneys after long-term, continuous (or chronic) exposure. After chronic intakes of soluble uranium by workers at the rate of 10 mg U per week, the concentration of uranium in the kidneys approaches and may even exceed the nephrotoxic limit of 3 {mu}g U per gram kidney tissue. Precise values of the kidney concentration depend on the biokinetic model and model parameters assumed for such a calculation. Since it is possible for the concentration of uranium in the kidneys to exceed 3 {mu}g per gram tissue at an intake rate of 10 mg U per week over long periods of time, we believe that the kidneys are protected from injury when intakes of soluble uranium at the rate of 10 mg U per week do not continue for more than two consecutive weeks. For long-term, continuous occupational exposure to low-level, soluble uranium, we recommend a reduced weekly intake limit of 5 mg uranium to prevent nephrotoxicity in workers. Our analysis shows that the nephrotoxic limit of 3 {mu}g U per gram kidney tissues is not exceeded after long-term, continuous uranium intake at the intake rate of 5 mg soluble uranium per week.

  18. Bioremediation of uranium contamination with enzymatic uranium reduction

    USGS Publications Warehouse

    Lovley, D.R.; Phillips, E.J.P.

    1992-01-01

    Enzymatic uranium reduction by Desulfovibrio desulfuricans readily removed uranium from solution in a batch system or when D. desulfuricans was separated from the bulk of the uranium-containing water by a semipermeable membrane. Uranium reduction continued at concentrations as high as 24 mM. Of a variety of potentially inhibiting anions and metals evaluated, only high concentrations of copper inhibited uranium reduction. Freeze-dried cells, stored aerobically, reduced uranium as fast as fresh cells. D. desulfuricans reduced uranium in pH 4 and pH 7.4 mine drainage waters and in uraniumcontaining groundwaters from a contaminated Department of Energy site. Enzymatic uranium reduction has several potential advantages over other bioprocessing techniques for uranium removal, the most important of which are as follows: the ability to precipitate uranium that is in the form of a uranyl carbonate complex; high capacity for uranium removal per cell; the formation of a compact, relatively pure, uranium precipitate.

  19. Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

    PubMed Central

    Babenko, Vitaliy; Murdock, Adrian T.; Koós, Antal A.; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A.; Nicholas, Robin J.; Grobert, Nicole

    2015-01-01

    Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min−1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials. PMID:26175062

  20. Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum.

    PubMed

    Babenko, Vitaliy; Murdock, Adrian T; Koós, Antal A; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A; Nicholas, Robin J; Grobert, Nicole

    2015-07-15

    Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min(-1)) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials.

  1. Ion beam-induced interfacial growth in Si and silicides

    NASA Astrophysics Data System (ADS)

    Fortuna, F.; Nédellec, P.; Ruault, M. O.; Bernas, H.; Lin, X. W.; Boucaud, P.

    1995-12-01

    We review the mechanisms and consequences of ion beam-induced epitaxial crystallization (IBIEC) in the transition metal- or rare earth-implanted {aSi}/{cSi} systems, as determined from in situ transmission electron microscopy (TEM) during irradiation, combined with channeling, high resolution TEM and optical measurements. IBIEC experiments on nm-size crystals confirm previously measured low values of interface roughness in IBIEC. We have performed interfacial growth simulations which indicate that the IBIEC process is, in fact, interface roughness-limited. They also suggest that interfacial growth processes are similar in several respects to surface growth processes, and that they largely determine (i) the growth habit of silicide precipitation, which is dominated by the interfacial energy, (ii) the possibility of trapping a large fraction of the impurities in non-equilibrium sites, leading to significant supersaturation. A consequence of this effect is to allow incorporation of large (over 300-fold supersaturation) Er concentrations in the substitutional sites of the Si lattice, leading to room-temperature photoluminescence (without any oxygen co-implantation). Evidence of a new, thermally induced instability in interfacial growth is presented: it displays both intermittency and very high growth rates, and is strongly affected by ion irradiation.

  2. New Manganese Silicide Mineral Phase in an Interplanetary Dust Particle

    NASA Technical Reports Server (NTRS)

    Nakamura-Messenger, K.; Keller, L. P.; Clemett, S. J.; Jones, J. H.; Palma, R. L.; Pepin, R. O.; Kloeck, W.; Zolensky, M. E.; Messenger, S.

    2008-01-01

    Comet 26P/Grigg-Skjellerup was identified as a source of an Earth-crossing dust stream with low Earth-encounter velocities, with peak anticipated fluxes during April in 2003 and 2004 [1]. In response to this prediction, NASA performed dedicated stratospheric dust collections using high altitude aircraft to target potential interplanetary dust particles (IDPs) from this comet stream in April 2003. Several IDPs from this collection have shown unusually low noble gas abundances [2] consistent with the predicted short space exposure ages of Grigg-Skjellerup dust particles [1]. High abundances of large D enrichments [3] and presolar grains [4] in IDPs from this collection are also consistent with an origin from the comet Grigg-Skjellerup. Here we report a new mineral from one of the cluster IDPs of the "Grigg-Skjellerup" collection, L2055. Our report focuses on an unusual manganese-iron-chromium silicide phase that, to our knowledge, has not been observed previously in nature. This unique phase may also shed light on the genesis of the enigmatic low-Fe,Mn-enriched (LIME) olivine that has been previously reported in IDPs and meteorites [5].

  3. High quality factor platinum silicide microwave kinetic inductance detectors

    NASA Astrophysics Data System (ADS)

    Szypryt, P.; Mazin, B. A.; Ulbricht, G.; Bumble, B.; Meeker, S. R.; Bockstiegel, C.; Walter, A. B.

    2016-10-01

    We report on the development of microwave kinetic inductance detectors (MKIDs) using platinum silicide as the sensor material. MKIDs are an emerging superconducting detector technology, capable of measuring the arrival times of single photons to better than two microseconds and their energies to around ten percent. Previously, MKIDs have been fabricated using either sub-stoichiometric titanium nitride or aluminum, but TiN suffers from the spatial inhomogeneities in the superconducting critical temperature and Al has a low kinetic inductance fraction, causing low detector sensitivity. To address these issues, we have instead fabricated the PtSi microresonators with the superconducting critical temperatures of 944 ± 12 mK and high internal quality factors ( Q i ≳ 10 6 ). These devices show typical quasiparticle lifetimes of τ q p ≈ 30 - 40 μ s and spectral resolution, R = λ / Δ λ , of 8 at 406.6 nm. We compare PtSi MKIDs to those fabricated with TiN and detail the substantial advantages that PtSi MKIDs have to offer.

  4. Oxidation/vaporization of silicide coated columbium base alloys

    NASA Technical Reports Server (NTRS)

    Kohl, F. J.; Stearns, C. A.

    1971-01-01

    Mass spectrometric and target collection experiments were made at 1600 K to elucidate the mode of oxidative vaporization of two columbium alloys, fused-slurry-coated with a complex silicide former (Si-20Cr-Fe). At oxygen pressures up to 0.0005 torr the major vapor component detected by mass spectrometry for oxidized samples was gaseous silicon monoxide. Analysis of condensates collected at oxygen pressures of 0.1, 1.0 and 10 torr revealed that chromium-, silicon-, iron- and tungsten- containing species were the major products of vaporization. Equilibrium thermochemical diagrams were constructed for the metal-oxygen system corresponding to each constituent metal in both the coating and base alloy. The major vaporizing species are expected to be the gaseous oxides of chromium, silicon, iron and tungsten. Plots of vapor phase composition and maximum vaporization rate versus oxygen pressure were calculated for each coating constituent. The major contribution to weight loss by vaporization at oxygen pressures above 1 torr was shown to be the chromium-containing species.

  5. Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

    NASA Astrophysics Data System (ADS)

    Babenko, Vitaliy; Murdock, Adrian T.; Koós, Antal A.; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A.; Nicholas, Robin J.; Grobert, Nicole

    2015-07-01

    Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min-1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials.

  6. Uranium purchases report 1992

    SciTech Connect

    Not Available

    1993-08-19

    Data reported by domestic nuclear utility companies in their responses to the 1991 and 1992 ``Uranium Industry Annual Survey,`` Form EIA-858, Schedule B ``Uranium Marketing Activities,are provided in response to the requirements in the Energy Policy Act 1992. Data on utility uranium purchases and imports are shown on Table 1. Utility enrichment feed deliveries and secondary market acquisitions of uranium equivalent of US DOE separative work units are shown on Table 2. Appendix A contains a listing of firms that sold uranium to US utilities during 1992 under new domestic purchase contracts. Appendix B contains a similar listing of firms that sold uranium to US utilities during 1992 under new import purchase contracts. Appendix C contains an explanation of Form EIA-858 survey methodologies with emphasis on the processing of Schedule B data.

  7. The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-k Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications

    NASA Astrophysics Data System (ADS)

    Lee, Bongmook; Novak, Steven R.; Biswas, Nivedita; Misra, Veena

    2012-01-01

    It was found that the structural properties with gadolinium (Gd) and europium (Eu) incorporation into nickel (Ni) fully silicided (FUSI) gate electrodes are markedly different and resulted in different degrees of effective work function modulation. It was found that Ni-Gd alloys tend to form stable compounds during silicidation and produced a Si-rich layer with amorphous/nanocystalline structure near the FUSI gate electrode/high-k dielectric interface. This compositional and structural change is the main mechanism responsible for effective work function modulation with Gd incorporation. However, in the case of Europium, Eu atoms tend to segregate outside the Ni-FUSI layer during silicidation and resulted in a uniform NixSiy layer with Eu pile-up layer at the FUSI gate electrode/high-k dielectric interface. This pile-up is believed to be the main cause of effective work function modulation with Eu incorporation. It was also found that the incorporation of Gd and Eu metals into Ni-FUSI gate can remotely scavenge the interfacial oxide layer resulting in lower equivalent oxide thickness (EOT) of the device.

  8. Process for continuous production of metallic uranium and uranium alloys

    DOEpatents

    Hayden, H.W. Jr.; Horton, J.A.; Elliott, G.R.B.

    1995-06-06

    A method is described for forming metallic uranium, or a uranium alloy, from uranium oxide in a manner which substantially eliminates the formation of uranium-containing wastes. A source of uranium dioxide is first provided, for example, by reducing uranium trioxide (UO{sub 3}), or any other substantially stable uranium oxide, to form the uranium dioxide (UO{sub 2}). This uranium dioxide is then chlorinated to form uranium tetrachloride (UCl{sub 4}), and the uranium tetrachloride is then reduced to metallic uranium by reacting the uranium chloride with a metal which will form the chloride of the metal. This last step may be carried out in the presence of another metal capable of forming one or more alloys with metallic uranium to thereby lower the melting point of the reduced uranium product. The metal chloride formed during the uranium tetrachloride reduction step may then be reduced in an electrolysis cell to recover and recycle the metal back to the uranium tetrachloride reduction operation and the chlorine gas back to the uranium dioxide chlorination operation. 4 figs.

  9. Process for continuous production of metallic uranium and uranium alloys

    DOEpatents

    Hayden, Jr., Howard W.; Horton, James A.; Elliott, Guy R. B.

    1995-01-01

    A method is described for forming metallic uranium, or a uranium alloy, from uranium oxide in a manner which substantially eliminates the formation of uranium-containing wastes. A source of uranium dioxide is first provided, for example, by reducing uranium trioxide (UO.sub.3), or any other substantially stable uranium oxide, to form the uranium dioxide (UO.sub.2). This uranium dioxide is then chlorinated to form uranium tetrachloride (UCl.sub.4), and the uranium tetrachloride is then reduced to metallic uranium by reacting the uranium chloride with a metal which will form the chloride of the metal. This last step may be carried out in the presence of another metal capable of forming one or more alloys with metallic uranium to thereby lower the melting point of the reduced uranium product. The metal chloride formed during the uranium tetrachloride reduction step may then be reduced in an electrolysis cell to recover and recycle the metal back to the uranium tetrachloride reduction operation and the chlorine gas back to the uranium dioxide chlorination operation.

  10. Thermal stability of copper silicide passivation layers in copper-based multilevel interconnects

    NASA Astrophysics Data System (ADS)

    Hymes, S.; Kumar, K. S.; Murarka, S. P.; Ding, P. J.; Wang, W.; Lanford, W. A.

    1998-04-01

    Copper thin films were exposed to a dilute silane mixture at temperatures in the range of 190-363 °C. The resulting silicide surface layers were characterized by four-point probe, Rutherford backscattering spectrometry, and x-ray diffraction. A definitive stability regime is observed in which progressively higher copper content phases exist with increasing temperature. Cu3Si, formed in silane, on annealing converts to Cu5Si and eventually to no silicide layer by a silicon diffusion reaction that in an inert ambient drives silicon into underlying copper to form a solid solution. In oxidizing ambients, a similar phenomenon occurs but now silicon also diffuses to surfaces where it oxidizes to form a self-passivating SiO2 layer on surface. These results have important implications governing integration of copper silicide as a passivation layer and silicon hydride based dielectric deposition in copper-based multilevel interconnect in ultralarge scale integration.

  11. Preparation of uranium compounds

    DOEpatents

    Kiplinger, Jaqueline L; Montreal, Marisa J; Thomson, Robert K; Cantat, Thibault; Travia, Nicholas E

    2013-02-19

    UI.sub.3(1,4-dioxane).sub.1.5 and UI.sub.4(1,4-dioxane).sub.2, were synthesized in high yield by reacting turnings of elemental uranium with iodine dissolved in 1,4-dioxane under mild conditions. These molecular compounds of uranium are thermally stable and excellent precursor materials for synthesizing other molecular compounds of uranium including alkoxide, amide, organometallic, and halide compounds.

  12. Metals fact sheet - uranium

    SciTech Connect

    1996-04-01

    About 147 million pounds of this radioactive element are consumed annually by the worldwide nuclear power and weapons industries, as well as in the manufacture of ceramics and metal products. The heaviest naturally occurring element, uranium is typically found in intrusive granites, igneous and metamorphic veins, tabular sedimentary deposits, and unconformity-related structures. This article discusses the geology, exploitation, market, and applications of uranium and uranium ores.

  13. Nonmilitary applications of uranium

    SciTech Connect

    Polson, C.E.; Blasch, E.B.

    1981-01-01

    Uranium and its alloys should be considered for any application where weight and/or strength is required, or where weight to volume is important. There is considerable literature on uranium and its alloys. The fear of handling metallic uranium should not be a factor. It is the least hazardous of all long-lived isotopes. Sound industrial hygiene practices will provide adequate protection. In general, safety controls are similar to those required for other heavy metals.

  14. Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content

    NASA Astrophysics Data System (ADS)

    Redondo-Cubero, A.; Galiana, B.; Lorenz, K.; Palomares, FJ; Bahena, D.; Ballesteros, C.; Hernandez-Calderón, I.; Vázquez, L.

    2016-11-01

    We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe+ ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution.

  15. Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content.

    PubMed

    Redondo-Cubero, A; Galiana, B; Lorenz, K; Palomares, F J; Bahena, D; Ballesteros, C; Hernandez-Calderón, I; Vázquez, L

    2016-11-04

    We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe(+) ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution.

  16. Forensic analysis of uranium

    SciTech Connect

    Stoyer, N.J.; Moody, K.J.

    1996-10-01

    As more and more offers for illicit {open_quotes}Black Market{close_quotes} radioactive materials are found, the forensic information contained within the radioactive material itself becomes more important. Many {open_quotes}Black Market{close_quotes} offers are for uranium in various forms and enrichments. Although most are scams, some countries have actually interdicted enriched uranium. We will discuss the forensic information that can be obtained from materials containing uranium along with examples of data that has been determined from analysis of uranium samples obtained from legitimate sources.

  17. URANIUM RECOVERY PROCESS

    DOEpatents

    Kaufman, D.

    1958-04-15

    A process of recovering uranium from very low-grade ore residues is described. These low-grade uraniumcontaining hydroxide precipitates, which also contain hydrated silica and iron and aluminum hydroxides, are subjected to multiple leachings with aqueous solutions of sodium carbonate at a pH of at least 9. This leaching serves to selectively extract the uranium from the precipitate, but to leave the greater part of the silica, iron, and aluminum with the residue. The uranium is then separated from the leach liquor by the addition of an acid in sufficient amount to destroy the carbonate followed by the addition of ammonia to precipitate uranium as ammonium diuranate.

  18. PRODUCTION OF URANIUM

    DOEpatents

    Ruehle, A.E.; Stevenson, J.W.

    1957-11-12

    An improved process is described for the magnesium reduction of UF/sub 4/ to produce uranium metal. In the past, there have been undesirable premature reactions between the Mg and the bomb liner or the UF/sub 4/ before the actual ignition of the bomb reaction. Since these premature reactions impair the yield of uranium metal, they have been inhibited by forming a protective film upon the particles of Mg by reacting it with hydrated uranium tetrafluoride, sodium bifluoride, uranyl fluoride, or uranium trioxide. This may be accomplished by adding about 0.5 to 2% of the additive to the bomb charge.

  19. Uranium Dispersion & Dosimetry Model.

    SciTech Connect

    MICHAEL,; MOMENI, H.

    2002-03-22

    The Uranium Dispersion and Dosimetry (UDAD) program provides estimates of potential radiation exposure to individuals and to the general population in the vicinity of a uranium processing facility such as a uranium mine or mill. Only transport through the air is considered. Exposure results from inhalation, external irradiation from airborne and ground-deposited activity, and ingestion of foodstuffs. Individual dose commitments, population dose commitments, and environmental dose commitments are computed. The program was developed for application to uranium mining and milling; however, it may be applied to dispersion of any other pollutant.

  20. COATING URANIUM FROM CARBONYLS

    DOEpatents

    Gurinsky, D.H.; Storrs, S.S.

    1959-07-14

    Methods are described for making adherent corrosion resistant coatings on uranium metal. According to the invention, the uranium metal is heated in the presence of an organometallic compound such as the carbonyls of nickel, molybdenum, chromium, niobium, and tungsten at a temperature sufficient to decompose the metal carbonyl and dry plate the resultant free metal on the surface of the uranium metal body. The metal coated body is then further heated at a higher temperature to thermally diffuse the coating metal within the uranium bcdy.

  1. METHOD OF ROLLING URANIUM

    DOEpatents

    Smith, C.S.

    1959-08-01

    A method is described for rolling uranium metal at relatively low temperatures and under non-oxidizing conditions. The method involves the steps of heating the uranium to 200 deg C in an oil bath, withdrawing the uranium and permitting the oil to drain so that only a thin protective coating remains and rolling the oil coated uranium at a temperature of 200 deg C to give about a 15% reduction in thickness at each pass. The operation may be repeated to accomplish about a 90% reduction without edge cracking, checking or any appreciable increase in brittleness.

  2. URANIUM LEACHING AND RECOVERY PROCESS

    DOEpatents

    McClaine, L.A.

    1959-08-18

    A process is described for recovering uranium from carbonate leach solutions by precipitating uranium as a mixed oxidation state compound. Uranium is recovered by adding a quadrivalent uranium carbon;te solution to the carbonate solution, adjusting the pH to 13 or greater, and precipitating the uranium as a filterable mixed oxidation state compound. In the event vanadium occurs with the uranium, the vanadium is unaffected by the uranium precipitation step and remains in the carbonate solution. The uranium-free solution is electrolyzed in the cathode compartment of a mercury cathode diaphragm cell to reduce and precipitate the vanadium.

  3. An inert marker study for palladium silicide formation - Si moves in polycrystalline Pd2Si

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Shreter, U.; Nicolet, M.-A.

    1985-01-01

    A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 111 and 100 line-type Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed.

  4. Optical anisotropy of quasi-1D rare-earth silicide nanostructures on Si(001)

    NASA Astrophysics Data System (ADS)

    Chandola, S.; Speiser, E.; Esser, N.; Appelfeller, S.; Franz, M.; Dähne, M.

    2017-03-01

    Rare earth metals are known to interact strongly with Si(001) surfaces to form different types of silicide nanostructures. Using STM to structurally characterize Dy and Tb silicide nanostructures on vicinal Si(001), it will be shown that reflectance anisotropy spectroscopy (RAS) can be used as an optical fingerprint technique to clearly distinguish between the formation of a semiconducting two-dimensional wetting layer and the metallic one-dimensional nanowires. Moreover, the distinctive spectral features can be related to structural units of the nanostructures. RAS spectra of Tb and Dy nanostructures are found to show similar features.

  5. An inert marker study for palladium silicide formation - Si moves in polycrystalline Pd2Si

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Shreter, U.; Nicolet, M.-A.

    1985-01-01

    A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 111 and 100 line-type Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed.

  6. Crystal Structure of Silicides in a Ti - 0.7 WT.% Si Nanostructured Alloy

    NASA Astrophysics Data System (ADS)

    Ivanov, M. B.; Manokhin, S. S.; Kolobova, A. Yu.

    2017-09-01

    Using warm, lengthwise grooved-roll processing of the Ti - 0.7 wt.% Si alloy, a nanostructured state is formed in it at 873 K with the grain-subgrain elements measuring about 280 nm. The titanium silicides precipitating during the dynamic strain-induced aging of the alloy are investigated by the methods of high-resolution scanning electron microscopy. It is found that the shape of the silicides is close to spherical, they have an FCClattice and an incoherent interface with the matrix.

  7. Atom Probe Tomography of Nanoscale Electronic Materials

    SciTech Connect

    Larson, David J.; Prosa, Ty J.; Perea, Daniel E.; Inoue, Hidekazu; Mangelinck, D.

    2016-01-01

    Atom probe tomography (APT) is a mass spectrometry based on time-of-flight measurements which also concurrently produces 3D spatial information. The reader is referred to any of the other papers in this volume or to the following references for further information 4–8. The current capabilities of APT, such as detecting a low number of dopant atoms in nanoscale devices or segregation at a nanoparticle interface, make this technique an important component in the nanoscale metrology toolbox. In this manuscript, we review some of the applications of APT to nanoscale electronic materials, including transistors and finFETs, silicide contact microstructures, nanowires, and nanoparticles.

  8. Selective rapid thermal chemical vapor deposition of titanium silicide on heavily doped silicon

    NASA Astrophysics Data System (ADS)

    Fang, Hua

    The continued scaling of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) increases the need for advanced contact formation technologies that can be used on ultra-shallow source and drain junctions. Titanium silicide (TiSi2) formed by the Self-Aligned Silicide (SALICIDE) technology is widely used in MOSFET fabrication for this purpose. As device feature sizes shrink down to 0.1 mum, however, the SALICIDE technology becomes increasingly incompatible with ultra-shallow junctions because of silicon substrate consumption. For TiSi2, achieving the low resistivity C54 phase on narrow polycrystalline silicon lines (<0.2 mum) is also quite challenging. This work focused on selective rapid thermal chemical vapor deposition (RTCVD) of TiSi2 on heavily-doped single-crystal substrates and polycrystalline films. As the gaseous precursors, SiH4 and TiCl 4 were used. The main objective of this work was to understand the impact of dopants on TiSi2 nucleation and substrate consumption in order to achieve C54-TiSi2 deposition with negligible consumption on heavily doped p- and n-type Si. In this work, TiSi2 deposition was found to be quite sensitive to both dopant type and amount. While boron doping did not interfere with TiSi2 deposition, arsenic introduced a barrier to nucleation and increased substrate consumption. These effects were linked to surface passivation before and during deposition. Arsenic was found to diffuse into the TiSi2 layer maintaining a high surface concentration during deposition. Phosphorus also showed effects similar to arsenic but these effects were much less severe and could be suppressed by raising the process temperature. To suppress the undesirable effects, different pre-deposition surface treatments were considered. The rationale behind these treatments was to remove the arsenic passivated surface layer without giving arsenic atoms the chance to replenish the surface sites. The surface treatments considered were in-situ Cl2 etching and in

  9. Uranium industry annual 1993

    SciTech Connect

    Not Available

    1994-09-01

    Uranium production in the United States has declined dramatically from a peak of 43.7 million pounds U{sub 3}O{sub 8} (16.8 thousand metric tons uranium (U)) in 1980 to 3.1 million pounds U{sub 3}O{sub 8} (1.2 thousand metric tons U) in 1993. This decline is attributed to the world uranium market experiencing oversupply and intense competition. Large inventories of uranium accumulated when optimistic forecasts for growth in nuclear power generation were not realized. The other factor which is affecting U.S. uranium production is that some other countries, notably Australia and Canada, possess higher quality uranium reserves that can be mined at lower costs than those of the United States. Realizing its competitive advantage, Canada was the world`s largest producer in 1993 with an output of 23.9 million pounds U{sub 3}O{sub 8} (9.2 thousand metric tons U). The U.S. uranium industry, responding to over a decade of declining market prices, has downsized and adopted less costly and more efficient production methods. The main result has been a suspension of production from conventional mines and mills. Since mid-1992, only nonconventional production facilities, chiefly in situ leach (ISL) mining and byproduct recovery, have operated in the United States. In contrast, nonconventional sources provided only 13 percent of the uranium produced in 1980. ISL mining has developed into the most cost efficient and environmentally acceptable method for producing uranium in the United States. The process, also known as solution mining, differs from conventional mining in that solutions are used to recover uranium from the ground without excavating the ore and generating associated solid waste. This article describes the current ISL Yang technology and its regulatory approval process, and provides an analysis of the factors favoring ISL mining over conventional methods in a declining uranium market.

  10. PROCESS FOR THE RECOVERY OF URANIUM FROM PHOSPHATIC ORE

    DOEpatents

    Long, R.L.

    1959-04-14

    A proccss is described for the recovery of uranium from phosphatic products derived from phosphatic ores. It has been discovered that certain alkyl phosphatic, derivatives can be employed in a direct solvent extraction operation to recover uranium from solid products, such as superphosphates, without first dissolving such solids. The organic extractants found suitable include alkyl derivatives of phosphoric, pyrophosphoric, phosof the derivative contains from 4 to 7 carbon atoms. A diluent such as kerosene is also used.

  11. High temperature behavior of metallic inclusions in uranium dioxide

    SciTech Connect

    Yang, R.L.

    1980-08-01

    The object of this thesis was to construct a temperature gradient furnace to simulate the thermal conditions in the reactor fuel and to study the migration of metallic inclusions in uranium oxide under the influence of temperature gradient. No thermal migration of molybdenum and tungsten inclusions was observed under the experimental conditions. Ruthenium inclusions, however, dissolved and diffused atomically through grain boundaries in slightly reduced uranium oxide. An intermetallic compound (probably URu/sub 3/) was formed by reaction of Ru and UO/sub 2-x/. The diffusivity and solubility of ruthenium in uranium oxide were measured.

  12. High-temperature thermochemistry of transition metal borides, silicides and related compounds. Final report

    SciTech Connect

    Klemppa, Ole J.

    2000-10-01

    Earlier this year in collaboration with Dr. Susan V. Meschel we prepared a major review paper which gives a comprehensive summary of what our laboratory has accomplished with support from DOE. This paper is No.43 in the List of Publications provided. It was presented to TMS at its National Meeting in Nashville, TN last March. A copy of the manuscript of this paper was recently mailed to DOE. It has been submitted for publication in Journal of Alloys and Compounds. This review paper summarizes our observed trends in the enthalpies of formation of TR-X and RE-X compounds (where X is a IIIB or IVB element) in their dependence of the atomic number of the transition metal (TR) and the lanthanide metal (RE). In this paper our measured enthalpies of formation for each alloy family are compared for the 3d, 4d and 5d transition metal elements. We also compare our experimental results with predicted values based on Miedema's semi-empirical model. Data are presented for the carbides, silicides, germanides and stannides in Group IVB, and for the borides and aluminides in Group IIIB. During the past year (1999-2000) we have extended our work to compounds of the 3d, 4d and 5d elements with gallium (see papers No.40, No.41, and No.45 in the List of Publications). Fig. 1 (taken from No.45) presents a systematic picture of our experimental values for the most exothermic gallide compounds formed with the transition elements. This figure is characteristic of the other systematic pictures which we have found for the two other IIIB elements which we have studied and for the four IVB elements. These figures are all presented in Ref. No.43. This paper also illustrates how the enthalpy of formation of compounds of the IIIB and IVB elements with the lanthanide elements (with the exception of Pm, Eu and Yb) depend on the atomic number of RE. Finally our results for the RE-X compounds are compared with the predictions of Gschneidner (K.A. Gschneidner, Jr., J. Less Common Metals 17, 1

  13. Uranium and Thorium

    ERIC Educational Resources Information Center

    Finch, Warren I.

    1978-01-01

    The results of President Carter's policy on non-proliferation of nuclear weapons are expected to slow the growth rate in energy consumption, put the development of the breeder reactor in question, halt plans to reprocess and recycle uranium and plutonium, and expand facilities to supply enriched uranium. (Author/MA)

  14. URANIUM SEPARATION PROCESS

    DOEpatents

    McVey, W.H.; Reas, W.H.

    1959-03-10

    The separation of uranium from an aqueous solution containing a water soluble uranyl salt is described. The process involves adding an alkali thiocyanate to the aqueous solution, contacting the resulting solution with methyl isobutyl ketons and separating the resulting aqueous and organic phase. The uranium is extracted in the organic phase as UO/sub 2/(SCN)/sub/.

  15. Uranium: A Dentist's perspective

    PubMed Central

    Toor, R. S. S.; Brar, G. S.

    2012-01-01

    Uranium is a naturally occurring radionuclide found in granite and other mineral deposits. In its natural state, it consists of three isotopes (U-234, U-235 and U-238). On an average, 1% – 2% of ingested uranium is absorbed in the gastrointestinal tract in adults. The absorbed uranium rapidly enters the bloodstream and forms a diffusible ionic uranyl hydrogen carbonate complex (UO2HCO3+) which is in equilibrium with a nondiffusible uranyl albumin complex. In the skeleton, the uranyl ion replaces calcium in the hydroxyapatite complex of the bone crystal. Although in North India, there is a risk of radiological toxicity from orally ingested natural uranium, the principal health effects are chemical toxicity. The skeleton and kidney are the primary sites of uranium accumulation. Acute high dose of uranyl nitrate delays tooth eruption, and mandibular growth and development, probably due to its effect on target cells. Based on all previous research and recommendations, the role of a dentist is to educate the masses about the adverse effects of uranium on the overall as well as the dental health. The authors recommended that apart from the discontinuation of the addition of uranium to porcelain, the Public community water supplies must also comply with the Environmental Protection Agency (EPA) standards of uranium levels being not more than 30 ppb (parts per billion). PMID:24478959

  16. International uranium market

    SciTech Connect

    Neff, T.L.; Jacoby, H.D.

    1980-12-01

    The international uranium market is affected by many of the same concerns that now attend all trade in energy: the adequacy of the resource base, price uncertainty, and worries about security of access. Uranium, like energy generally, is now a strategic commodity for reasons of economic security. Uranium is also the subject of international security concerns because of its association with the proliferation of nuclear weapons. Proliferation is a subject of disagreement among nations - with some arguing that access to uranium or enriched fuel should be coupled to restraint in technological decisions and acceptance of wide-ranging safeguards; the net result is yet another dimension of uncertainty about an energy commodity that many nations feel is vital to their future. These security concerns are related to the nature and behavior of the international market for nuclear fuels. Without adequate information, the worst is usually assumed. Thus, a clearer view of the nature of supply and demand, of government policy formulation, and of market functioning can help relieve at least some of the security worries felt by those in charge of national energy policies. It is the purpose of this paper to improve this understanding. The following topics are discussed: Uranium Demand; Uranium Supply; Major Uranium Producers - Australia, Canada, South Africa, Namibia, Niger; Major Consumers - Japan, France, West Germany; The Uranium Market; and Issues and Implications.

  17. Uranium and Thorium

    ERIC Educational Resources Information Center

    Finch, Warren I.

    1978-01-01

    The results of President Carter's policy on non-proliferation of nuclear weapons are expected to slow the growth rate in energy consumption, put the development of the breeder reactor in question, halt plans to reprocess and recycle uranium and plutonium, and expand facilities to supply enriched uranium. (Author/MA)

  18. DECONTAMINATION OF URANIUM

    DOEpatents

    Spedding, F.H.; Butler, T.A.

    1962-05-15

    A process is given for separating fission products from uranium by extracting the former into molten aluminum. Phase isolation can be accomplished by selectively hydriding the uranium at between 200 and 300 deg C and separating the hydride powder from coarse particles of fissionproduct-containing aluminum. (AEC)

  19. 16. VIEW OF THE ENRICHED URANIUM RECOVERY SYSTEM. ENRICHED URANIUM ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    16. VIEW OF THE ENRICHED URANIUM RECOVERY SYSTEM. ENRICHED URANIUM RECOVERY PROCESSED RELATIVELY PURE MATERIALS AND SOLUTIONS AND SOLID RESIDUES WITH RELATIVELY LOW URANIUM CONTENT. URANIUM RECOVERY INVOLVED BOTH SLOW AND FAST PROCESSES. (4/4/66) - Rocky Flats Plant, General Manufacturing, Support, Records-Central Computing, Southern portion of Plant, Golden, Jefferson County, CO

  20. Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide.

    PubMed

    Zhu, Shiyang; Lo, G Q; Kwong, D L

    2011-08-15

    An ultracompact integrated silicide Schottky barrier detector (SBD) is designed and theoretically investigated to electrically detect the surface plasmon polariton (SPP) propagating along horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguides at the telecommunication wavelength of 1550 nm. An ultrathin silicide layer inserted between the silicon core and the insulator, which can be fabricated precisely using the well-developed self-aligned silicide process, absorbs the SPP power effectively if a suitable silicide is chosen. Moreover, the Schottky barrier height in the silicide-silicon-silicide configuration can be tuned substantially by the external voltage through the Schottky effect owing to the very narrow silicon core. For a TaSi(2) detector with optimized dimensions, numerical simulation predicts responsivity of ~0.07 A/W, speed of ~60 GHz, dark current of ~66 nA at room temperature, and minimum detectable power of ~-29 dBm. The design also suggests that the device's size can be reduced and the overall performances will be further improved if a silicide with smaller permittivity is used.

  1. METHOD FOR PURIFYING URANIUM

    DOEpatents

    Kennedy, J.W.; Segre, E.G.

    1958-08-26

    A method is presented for obtaining a compound of uranium in an extremely pure state and in such a condition that it can be used in determinations of the isotopic composition of uranium. Uranium deposited in calutron receivers is removed therefrom by washing with cold nitric acid and the resulting solution, coataining uranium and trace amounts of various impurities, such as Fe, Ag, Zn, Pb, and Ni, is then subjected to various analytical manipulations to obtain an impurity-free uranium containing solution. This solution is then evaporated on a platinum disk and the residue is ignited converting it to U2/sub 3//sub 8/. The platinum disk having such a thin film of pure U/sub 2/O/sub 8/ is suitable for use with isotopic determination techaiques.

  2. Uranium dioxide electrolysis

    DOEpatents

    Willit, James L [Batavia, IL; Ackerman, John P [Prescott, AZ; Williamson, Mark A [Naperville, IL

    2009-12-29

    This is a single stage process for treating spent nuclear fuel from light water reactors. The spent nuclear fuel, uranium oxide, UO.sub.2, is added to a solution of UCl.sub.4 dissolved in molten LiCl. A carbon anode and a metallic cathode is positioned in the molten salt bath. A power source is connected to the electrodes and a voltage greater than or equal to 1.3 volts is applied to the bath. At the anode, the carbon is oxidized to form carbon dioxide and uranium chloride. At the cathode, uranium is electroplated. The uranium chloride at the cathode reacts with more uranium oxide to continue the reaction. The process may also be used with other transuranic oxides and rare earth metal oxides.

  3. URANIUM PRECIPITATION PROCESS

    DOEpatents

    Thunaes, A.; Brown, E.A.; Smith, H.W.; Simard, R.

    1957-12-01

    A method for the recovery of uranium from sulfuric acid solutions is described. In the present process, sulfuric acid is added to the uranium bearing solution to bring the pH to between 1 and 1.8, preferably to about 1.4, and aluminum metal is then used as a reducing agent to convert hexavalent uranium to the tetravalent state. As the reaction proceeds, the pH rises amd a selective precipitation of uranium occurs resulting in a high grade precipitate. This process is an improvement over the process using metallic iron, in that metallic aluminum reacts less readily than metallic iron with sulfuric acid, thus avoiding consumption of the reducing agent and a raising of the pH without accomplishing the desired reduction of the hexavalent uranium in the solution. Another disadvantage to the use of iron is that positive ferric ions will precipitate with negative phosphate and arsenate ions at the pH range employed.

  4. A DFT study of dodecahedral beryllium silicide cage clusters

    NASA Astrophysics Data System (ADS)

    Fioressi, Silvina; Bacelo, Daniel E.; Binning, R. C.

    2012-06-01

    Density functional theory calculations have been conducted on 20- and 32-atom dodecahedral and face-capped dodecahedral cage clusters of beryllium and silicon. Stable Be24Si8, Be12Si8 and Be12Si20 cages are described, as is a stuffed cluster consisting of dodecahedral Si20 with an endohedral icosahedral Be12. Especial stability is associated with clusters in which faces are capped by silicon atoms, acting as electron donors to beryllium atoms.

  5. Synthesis of epitaxial ternary Co1-xFexSi2 silicides with CsCl- and CaF2-type cubic structures on Si(111) by codeposition techniques

    NASA Astrophysics Data System (ADS)

    Hong, S.; Pirri, C.; Wetzel, P.; Gewinner, G.

    1997-05-01

    We have grown ternary Co1-xFexSi2 silicide films, about 100 Å thick, by codeposition onto Si(111) held at room temperature in the whole composition range 0<=x<=1. Low-energy electron diffraction, inelastic medium-energy electron diffraction, x-ray diffraction, x-ray photoelectron diffraction, and photoemission spectroscopy techniques are used to investigate the atomic and electronic structure of these ternary silicides. It is found that the as-deposited films are metallic and adopt an ordered cubic structure of CsCl type with essentially random vacancies, except in Co-rich films (x<=0.25) where a tendency toward an ordered vacancy arrangement of the CaF2 type is already visible. Upon annealing at 650 °C, these silicides are found to be metastable, but phase separation does not take place. Fe-rich (x>=0.85) films invariably convert into a semiconducting phase with a structure similar to the orthorhombic Β-FeSi2 one. Yet, most interestingly, the cubic structure is preserved for x<=0.85, i.e., stabilized when the Co content exceeds about 15%. X-ray diffraction reveals that these phases exhibit partial CaF2 long-range order. The order parameter is close to zero for x=0.85 and increases rapidly with increasing Co content. The data indicate that Fe does not merely substitute for Co atoms in a perfect CaF2-type CoSi2 structure. Several of the Fe and possibly Co atoms preferentially occupy the interstitial octahedral sites of this latter structure even for x<=0.50, while for x>=0.75 a local environment essentially similar to that in defected CsCl-type structure is observed for both Fe and Co sites.

  6. Impact of laser anneal on NiPt silicide texture and chemical composition

    NASA Astrophysics Data System (ADS)

    Feautrier, C.; Ozcan, A. S.; Lavoie, C.; Valery, A.; Beneyton, R.; Borowiak, C.; Clément, L.; Pofelski, A.; Salem, B.

    2017-06-01

    We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.

  7. Electronic properties of Co and Ni silicides: a theoretical approach using extended Huckel method

    NASA Astrophysics Data System (ADS)

    Galvan, D. H.; Posada Amarillas, A.; Samaniego Reyna, J. C.; García-Méndez, M.; Farías, M. H.

    2004-11-01

    Calculations of electronic structure, total and projected density of states (DOS), crystal orbital overlap population (COOP), and average net charge, and also Mulliken population analysis, were performed to study electronic properties of Co and Ni silicides. Analysis of the energy bands depicts metallic behavior for both silicides.The projected DOS yields an indication that hybridization occurs for Co and Ni silicides. The hybridized band in CoSi2 is composed of Co d and p orbitals and Si p and s orbitals, while in NiSi2 the hybridized band is formed by Ni d and p orbitals with Si p orbitals. The fact that the Fermi energy crosses a small part of the DOS, as is the case of CoSi2, yields an indication of the different electronic properties of CoSi2 when compared to NiSi2. The hybridization is stronger in CoSi2 than in NiSi2. Mulliken population analysis provides an indication that a smaller charge distribution exists in NiSi2 when compared to CoSi2. This difference in charge distribution accounts for the different electronic behavior, in agreement with the DOS analysis. Moreover, COOP analysis provides an indication of the existence of covalent bonding between M and Si (M = Ni, Co), this being stronger in Co than in Ni silicides. Furthermore, the average net charge in both compounds yields an indication that there is a charge transfer from M towards Si.

  8. Magneto-Transport Studies of Molecular Beam Epitaxial Grown Osmium Silicides

    NASA Astrophysics Data System (ADS)

    Cottier, Ryan; Zhao, Wei; Amir, Fatima; Hossain, Khalid; Anibou, Noureddine; Donner, Wolfgang; Golding, Terry

    2006-03-01

    Semiconducting transition metal silicides present a possible solution to on-chip integration of optical and electronic Si-based circuitry. Two phases of osmium silicide (OsSi2 and Os2Si3) are predicted to have promising optical characteristics but require additional development to fully determine their feasibility for high-quality devices. This study has been motivated by reports that OsSi2 has a bandgap between 1.4--1.8eV [1, 2] and Os2Si3 may have a direct bandgap of 0.95 eV [3] or 2.3 eV [1]. In this paper we will present temperature dependent (20 < T < 300 K) magneto Hall measurements of molecular beam epitaxial grown osmium silicide thin films. Os and Si were coevaporated onto Si(100) substrates at varying growth rates and temperatures. XRD was performed in order to identify the silicide phases present. We will discuss our results in relation to the known phase diagrams and our growth parameters. [1] L. Schellenberg et al., J. Less-Common Met. 144, 341 (1988). [2] K. Mason and G. Müller-Vogt, J. Appl. Phys. 63, 34 (1983). [3] A. B. Filonov et al., Phys. Rev. B 60(24), 16494 (1999).

  9. Rocket-propellant burn tests of silicide-coated niobium and tantalum

    SciTech Connect

    Curtis, P.G.; Krikorian, O.H.; Helm, F.H.

    1988-04-20

    Coatings designed to protect refractory metals in fire situations were tested on niobium and tantalum in a furnace and in a rocket-fuel flame. The best performance was obtained from Cr-Si-type silicide coatings applied by the pack-cementation process. The main mode of failure of the coated parts was corrosion by molten stainless steel rather than oxidation.

  10. Influence of Rapid Thermal Ramp Rate on Phase Transformation of Titanium Silicides

    SciTech Connect

    Bailey, Glenn; Hu, Yao, Zhi; Smith, Paul Martin; Tay, Sing Pin; Thakur, Randhir; Yang, Jiting

    1999-05-03

    ULSI technology requires low resistance, stable silicides formed on small geometry lines. Titanium disilicide (TiSiz), which is the most widely used silicide for ULSI applications, exists in two crystallographic phases: the high resistance, metastable C49 phase and the low resistance, stable C54 phase. The major issue with TiSiz is the increasing thermal budget required to transform the C49 phase into the low resistance C54 phase as linewiths decrease below 0.25 pm. Annealing above 900"C to obtain this transformation often results in thermal degradation, so it is desirable to reduce the transformation temperature. The transformation temperature has been shown to be a fi.mction of many factors including microstructure, grain size, and impurities. In this paper we report an investig+ion of rapid thermal silicidation of titanium films (250, 400, and 600 A) on single crystalline silicon at temperatures from 300 to 1000"C. The ramp rates for these experiments are 5, 30, 70, and 200oC/s. The transformation temperature decreases as the ramp rate increases and as the initial film thickness increases. Scanning electron microscopy (SEM) is used to analyze the resultant film microstructure. The ramp rate influence on Ti silicidation is also investigated on polycrystalline Si lines with widths ranging from 0.27 to 3.0 pm.

  11. Silicide Coating Fabricated by HAPC/SAPS Combination to Protect Niobium Alloy from Oxidation.

    PubMed

    Sun, Jia; Fu, Qian-Gang; Guo, Li-Ping; Wang, Lu

    2016-06-22

    A combined silicide coating, including inner NbSi2 layer and outer MoSi2 layer, was fabricated through a two-step method. The NbSi2 was deposited on niobium alloy by halide activated pack cementation (HAPC) in the first step. Then, supersonic atmospheric plasma spray (SAPS) was applied to obtain the outer MoSi2 layer, forming a combined silicide coating. Results show that the combined coating possessed a compact structure. The phase constitution of the combined coating prepared by HAPC and SAPS was NbSi2 and MoSi2, respectively. The adhesion strength of the combined coating increased nearly two times than that for single sprayed coating, attributing to the rougher surface of the HAPC-bond layer whose roughness increased about three times than that of the grit-blast substrate. After exposure at 1200 °C in air, the mass increasing rate for single HAPC-silicide coating was 3.5 mg/cm(2) because of the pest oxidation of niobium alloy, whereas the combined coating displayed better oxidation resistance with a mass gain of only 1.2 mg/cm(2). Even more, the combined coating could significantly improve the antioxidation ability of niobium based alloy at 1500 °C. The good oxidation resistance of the combined silicide coating was attributed to the integrity of the combined coating and the continuous SiO2 protective scale provided by the oxidation of MoSi2.

  12. Properties of SiO2 grown on Ti, Co, Ni, Pd, and Pt silicides

    NASA Astrophysics Data System (ADS)

    Bartur, M.; Nicolet, M.-A.

    1984-01-01

    Successful utilization of silicides for VLSI applcations depends strongly on the formation of electrically insulating oxide on top of the silicide (1) . It is found that almost all silicides on a Si substrate can be oxidized to form an SiO2 layer on their surface. In this paper, we present some of the properties of such SiO2 layers formed on TiSi2, CoSi2, NiSi2, Pd2Si, and PtSi on a substrate following dry and wet oxidation. Electrical parameters that were investigated are the dielectric constant, dielectric strength (breakdown field), and pinhole density. The dielectric constant was found to be 3.49 ± 0.24, which is similar to the values reported for SiO2 grown on Si. The dielectric strength of the oxide layers depends on the polarity of the applied voltage, as is the case for oxide grown on poly-Si. Pinhole density in this oxide was also estimated and is less than 40 per cm2. The oxide density and stoichiometry were evaluated using Rutherford Backscattering Spectrometry (RBS) and DEKTAK, and compared to SiO2 grown on . The conclusion we have reached is that oxides grown on almost all the silicides investigated (except PdSi), hold promise for integrated circuit application. The main problem is the suicide roughness, induced by the thermal oxidation, that reduces the dielectric breakdown field.

  13. Conversion and Evaluation of the University of Massachusetts Lowell Research Reactor From High-Enriched To Low-Enriched Uranium Fuel

    SciTech Connect

    Leo M. Bobek

    2003-11-19

    The process for converting the University of Massachusetts Lowell Research Reactor (UMLRR) from high-enrichment uranium (HEU) fuel to low-enrichment uranium (LEU) fuel began in 1988. Several years of design reviews, computational modeling, and thermal hydraulic analyses resulted in a preliminary reference core design and configuration based on 20 standard, MTR-type, flat-plate, 19.75% enriched, uranium silicide (u3Si2) fuel elements. A final safety analysis for the fuel conversion was submitted to the Nuclear Regulatory Commission (NRC) in 1993. The NRC made two additional requests for additional information and supplements were submitted in 1994 and 1997. The new UMLRR Reactor Supervisor initiated an effort to change the LEU reference core configuration to eliminate a complicated control rod modification needed for the smaller core.

  14. Thermal Stability Study from Room Temperature to 1273 K (1000 °C) in Magnesium Silicide

    NASA Astrophysics Data System (ADS)

    Stefanaki, Eleni-Chrysanthi; Hatzikraniotis, Euripides; Vourlias, George; Chrissafis, Konstantinos; Kitis, George; Paraskevopoulos, Konstantinos M.; Polymeris, George S.

    2016-10-01

    Doped magnesium silicide has been identified as a promising and environmentally friendly advanced thermoelectric material in the temperature range between 500 K and 800 K (227 °C and 527 °C). Besides the plethora of magnesium silicide thermoelectric advantages, it is well known for its high sensitivity to oxidation. Oxidation is one of the primary instability mechanisms of degradation of high-temperature Mg2Si thermoelectric devices, as in the presence of O2, Mg2Si decomposes to form MgO and Si. In this work, commercial magnesium silicide in bulk form was used for thermal stability study from room temperature to 1273 K (1000 °C). Various techniques such as DTA-TG, PXRD, and FTIR have been applied. Moreover, the application of thermoluminescence (TL) as an effective and alternative probe for the study of oxidation and decomposition has been exploited. The latter provides qualitative but very helpful hints toward oxidation studies. The low-detection threshold of thermoluminescence, in conjunction with the chemical composition of the oxidation byproducts, consisting of MgO, Mg2SiO4, and SiO2, constitute two powerful motivations for further investigating its viable use as proxy for instability/decomposition studies of magnesium silicide. The partial oxidation reaction has been adopted due to the experimental fact that magnesium silicide is monitored throughout the heating temperature range of the present study. Finally, the role of silicon dioxide to the decomposition procedure, being in amorphous state and gradually crystallizing, has been highlighted for the first time in the literature. Mg2Si oxidation takes place in two steps, including a mild oxidation process with temperature threshold of 573 K (300 °C) and an abrupt one after 773 K (500 °C). Implications on the optimum operational temperature range for practical thermoelectric (TE) applications have also been briefly discussed.

  15. Further thermodynamic assessment for synthesizing transition metal silicides by the combustion synthesis process

    SciTech Connect

    Bhaduri, S.B.; Qian, Z.B.; Radhakrishnan, R.

    1994-01-15

    It is now recognized that the silicide based materials can perform well under high temperature oxidizing conditions in the range of 1,200--1,600 C. The range of potential uses described in the literature for aerospace, automobile to power generation equipment is extremely broad. In fact, the silicides offer an alternative class of materials to the engineering ceramics such as SiC and Si{sub 3}N{sub 4}. In their previous paper, the authors argued that combustion synthesis (CS) may prove to be a viable method for producing transition metal silicides; it drew attention to the advantages of the process in comparison to conventional processes. This paper will expand their previous thermodynamic assessment in two ways: (1) encompass a larger number of silicides for which thermodynamic data are readily available and (2) perform thermodynamic calculations in order to obtain a correlation between thermodynamic quantities that characterize the materials in question. Previously, the authors stopped short of these calculations by obtaining experimental data from Russian literature. In the present case, experimental data are not available for many of the silicides. Consequently, thermodynamic calculations, for the first time, predict the possibility of synthesizing some of the materials in question by the CS process. Being predictions, the calculated values may be larger than experimental values (if and when available). Nonetheless, these predictions may prove to be important because thermodynamics dictates whether a reaction will propagate or quench itself. These calculations can be used as a classification tool in distinguishing between the energetic systems and the sluggish ones.

  16. Microstructure and mechanical properties of metal/oxide and metal/silicide interfaces

    SciTech Connect

    Shaw, L.; Miracle, D.; Abbaschian, R.

    1995-12-01

    Fracture energies of Al{sub 2}O{sub 3}/Nb interfaces and MoSi{sub 2}/Nb interfaces with and without Al{sub 2}O{sub 3} coating were measured using sandwich-type chevron-notched specimens. The relations between the mechanical properties, microstructures, types of bonds at the interface and processing routes were explored. The fracture energy of the Al{sub 2}O{sub 3}/Nb interface was determined to be 9 J/m{sup 2} and changed to 16 J/m{sup 2} when Nb was pre-oxidized before the formation of the Al{sub 2}O{sub 3}/Nb interface. The fracture energy of the MoSi{sub 2}/Nb interface could not be determined directly because of the formation of the interfacial compounds. However, the fracture energy at the MoSi{sub 2}/Nb interfacial region was found to depend on the interfacial bond strength, roughness of interfaces and microstructure of interfacial compounds. The interfacial fracture energies of Al{sub 2}O{sub 3} with silicides, MoSi{sub 2}, Nb{sub 5}Si{sub 3}, or (Nb, Mo)Si{sub 2} were estimated to be about 16 J/m{sup 2}, while the interfacial fracture energies between two silicides or between Nb and a silicide were larger than 34 J/m{sup 2}. The measured fracture energies between two silicides or between Nb and a silicide were larger than 34 J/m{sup 2}. The measured fracture energies of the various interfaces are discussed in terms of the interfacial microstructures and types of bonds at the interfaces.

  17. PROCESS OF RECOVERING URANIUM

    DOEpatents

    Kilner, S.B.

    1959-12-29

    A method is presented for separating and recovering uranium from a complex mixure of impurities. The uranium is dissolved to produce an aqueous acidic solution including various impurities. In accordance with one method, with the uranium in the uranyl state, hydrogen cyanide is introduced into the solution to complex the impurities. Subsequently, ammonia is added to the solution to precipitate the uraniunn as ammonium diuranate away from the impurities in the solution. Alternatively, the uranium is precipitated by adding an alkaline metal hydroxide. In accordance with the second method, the uranium is reduced to the uranous state in the solution. The reduced solution is then treated with solid alkali metal cyanide sufficient to render the solution about 0.1 to 1.0 N in cyanide ions whereat cyanide complex ions of the metal impurities are produced and the uranium is simultaneously precipituted as uranous hydroxide. Alternatively, hydrogen cyanide may be added to the reduced solution and the uranium precipitated subsequently by adding ammonium hydroxide or an alkali metal hydroxide. Other refinements of the method are also disclosed.

  18. Depleted uranium management alternatives

    SciTech Connect

    Hertzler, T.J.; Nishimoto, D.D.

    1994-08-01

    This report evaluates two management alternatives for Department of Energy depleted uranium: continued storage as uranium hexafluoride, and conversion to uranium metal and fabrication to shielding for spent nuclear fuel containers. The results will be used to compare the costs with other alternatives, such as disposal. Cost estimates for the continued storage alternative are based on a life-cycle of 27 years through the year 2020. Cost estimates for the recycle alternative are based on existing conversion process costs and Capital costs for fabricating the containers. Additionally, the recycle alternative accounts for costs associated with intermediate product resale and secondary waste disposal for materials generated during the conversion process.

  19. Recovery of uranium values

    DOEpatents

    Brown, K. B.; Crouse, Jr., D. J.; Moore, J. G.

    1959-03-10

    A liquid-liquid extraction method is presented for recovering uranium values from an aqueous acidic solution by means of certain high molecular weight amine fn the amine classes of primary, secondary, heterocyclic secondary, tertiary, or heterocyclic tertiary. The uranium bearing aqueous acidic solution is contacted with the selected anine dissolved in a nonpolar waterimmiscible organfc solvent such as kerosene. The uranium which is substantially completely extracted by the organic phase may be stripped therefrom by water, and recovered from the aqueous phase by treatment into ammonia to precipitate ammonium diuranate.

  20. RECOVERY OF URANIUM VALUES

    DOEpatents

    Brown, K.B.; Crouse, D.J. Jr.; Moore, J.G.

    1959-03-10

    A liquid-liquid extraction method is presented for recovering uranium values from an aqueous acidic solution by means of certain high molecular weight amine in the amine classes of primary, secondary, heterocyclic secondary, tertiary, or heterocyclic tertiary. The uranium bearing aqueous acidic solution is contacted with the selected amine dissolved in a nonpolar water-immiscible organic solvent such as kerosene. The uranium which is substantially completely exiracted by the organic phase may be stripped therefrom by waters and recovered from the aqueous phase by treatment into ammonia to precipitate ammonium diuranate.

  1. Synthesis, Characterization, and Mechanism of Formation of Janus-Like Nanoparticles of Tantalum Silicide-Silicon (TaSi₂/Si).

    PubMed

    Nomoev, Andrey V; Bardakhanov, Sergey P; Schreiber, Makoto; Bazarova, Dashima Zh; Baldanov, Boris B; Romanov, Nikolai A

    2014-12-25

    Metal-semiconductor Janus-like nanoparticles with the composition tantalum silicide-silicon (TaSi₂/Si) were synthesized for the first time by means of an evaporation method utilizing a high-power electron beam. The composition of the synthesized particles were characterized using high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), selective area electron diffraction (SAED), and energy dispersive X-ray fluorescence (EDX) analysis. The system is compared to previously synthesized core-shell type particles in order to show possible differences responsible for the Janus-like structure forming instead of a core-shell architecture. It is proposed that the production of Janus-like as opposed to core-shell or monophase particles occurs due to the ability of Ta and Si to form compounds and the relative content of Ta and Si atoms in the produced vapour. Based on the results, a potential mechanism of formation for the TaSi₂/Si nanoparticles is discussed.

  2. Spectroscopy of uranium within the SILVA program

    NASA Astrophysics Data System (ADS)

    Avril, R.; Petit, Alain D.; Radwan, J.; Vors, E.

    1993-05-01

    The multistep photoionization of uranium atoms implies choosing an irradiation scheme and this choice is only possible if the following spectroscopic parameters are known: oscillator strength, isotopic shift, hyperfine structure, lifetime, autoionization spectrum. In order to measure these parameters two kinds of experimental set-up are used: laser induced fluorescence and laser induced photoionization techniques. Since the oscillator strengths determine the laser fluences needed for an effective atomic photoionization, this parameter must be accurately measured and two different methods are used: the saturation method, and branching ratio plus lifetime.

  3. Uranium Pyrophoricity Phenomena and Prediction

    SciTech Connect

    DUNCAN, D.R.

    2000-04-20

    We have compiled a topical reference on the phenomena, experiences, experiments, and prediction of uranium pyrophoricity for the Hanford Spent Nuclear Fuel Project (SNFP) with specific applications to SNFP process and situations. The purpose of the compilation is to create a reference to integrate and preserve this knowledge. Decades ago, uranium and zirconium fires were commonplace at Atomic Energy Commission facilities, and good documentation of experiences is surprisingly sparse. Today, these phenomena are important to site remediation and analysis of packaging, transportation, and processing of unirradiated metal scrap and spent nuclear fuel. Our document, bearing the same title as this paper, will soon be available in the Hanford document system [Plys, et al., 2000]. This paper explains general content of our topical reference and provides examples useful throughout the DOE complex. Moreover, the methods described here can be applied to analysis of potentially pyrophoric plutonium, metal, or metal hydride compounds provided that kinetic data are available. A key feature of this paper is a set of straightforward equations and values that are immediately applicable to safety analysis.

  4. Fused slurry silicide coatings for columbium alloy reentry heat shields. Volume 2: Experimental and coating process details

    NASA Technical Reports Server (NTRS)

    Fitzgerald, B.

    1973-01-01

    The experimental and coating process details are presented. The process specifications which were developed for the formulation and application of the R-512E fused slurry silicide coating using either an acrylic or nitrocellulose base slurry system is also discussed.

  5. Impact of silicide layer on single photon avalanche diodes in a 130 nm CMOS process

    NASA Astrophysics Data System (ADS)

    Cheng, Zeng; Palubiak, Darek; Zheng, Xiaoqing; Deen, M. Jamal; Peng, Hao

    2016-09-01

    Single photon avalanche diode (SPAD) is an attractive solid-state optical detector that offers ultra-high photon sensitivity (down to the single photon level), high speed (sub-nanosecond dead time) and good timing performance (less than 100 ps). In this work, the impact of the silicide layer on SPAD’s characteristics, including the breakdown voltage, dark count rate (DCR), after-pulsing probability and photon detection efficiency (PDE) is investigated. For this purpose, two sets of SPAD structures in a standard 130 nm complementary metal oxide semiconductor (CMOS) process are designed, fabricated, measured and compared. A factor of 4.5 (minimum) in DCR reduction, and 5 in PDE improvements are observed when the silicide layer is removed from the SPAD structure. However, the after-pulsing probability of the SPAD without silicide layer is two times higher than its counterpart with silicide. The reasons for these changes will be discussed.

  6. Depleted Uranium: Technical Brief

    EPA Pesticide Factsheets

    This technical brief provides accepted data and references to additional sources for radiological and chemical characteristics, health risks and references for both the monitoring and measurement, and applicable treatment techniques for depleted uranium.

  7. Uranium Location Database Compilation

    EPA Pesticide Factsheets

    EPA has compiled mine location information from federal, state, and Tribal agencies into a single database as part of its investigation into the potential environmental hazards of wastes from abandoned uranium mines in the western United States.

  8. PURIFICATION OF URANIUM FUELS

    DOEpatents

    Niedrach, L.W.; Glamm, A.C.

    1959-09-01

    An electrolytic process of refining or decontaminating uranium is presented. The impure uranium is made the anode of an electrolytic cell. The molten salt electrolyte of this cell comprises a uranium halide such as UF/sub 4/ or UCl/sub 3/ and an alkaline earth metal halide such as CaCl/sub 2/, BaF/sub 2/, or BaCl/sub 2/. The cathode of the cell is a metal such as Mn, Cr, Co, Fe, or Ni which forms a low melting eutectic with U. The cell is operated at a temperature below the melting point of U. In operation the electrodeposited uranium becomes alloyed with the metal of the cathode, and the low melting alloy thus formed drips from the cathode.

  9. URANIUM RECOVERY PROCESS

    DOEpatents

    Stevenson, J.W.; Werkema, R.G.

    1959-07-28

    The recovery of uranium from magnesium fluoride slag obtained as a by- product in the production of uranium metal by the bomb reduction prccess is presented. Generally the recovery is accomplished by finely grinding the slag, roasting ihe ground slag air, and leaching the roasted slag with a hot, aqueous solution containing an excess of the sodium bicarbonate stoichiometrically required to form soluble uranium carbonate complex. The roasting is preferably carried out at between 425 and 485 deg C for about three hours. The leaching is preferably done at 70 to 90 deg C and under pressure. After leaching and filtration the uranium may be recovered from the clear leach liquor by any desired method.

  10. 300 AREA URANIUM CONTAMINATION

    SciTech Connect

    BORGHESE JV

    2009-07-02

    {sm_bullet} Uranium fuel production {sm_bullet} Test reactor and separations experiments {sm_bullet} Animal and radiobiology experiments conducted at the. 331 Laboratory Complex {sm_bullet} .Deactivation, decontamination, decommissioning,. and demolition of 300 Area facilities

  11. Uranium purchases report 1993

    SciTech Connect

    Not Available

    1994-08-10

    Data reported by domestic nuclear utility companies in their responses to the 1991 through 1993 ``Uranium Industry Annual Survey,`` Form EIA-858, Schedule B,`` Uranium Marketing Activities,`` are provided in response to the requirements in the Energy Policy Act 1992. Appendix A contains an explanation of Form EIA-858 survey methodologies with emphasis on the processing of Schedule B data. Additional information published in this report not included in Uranium Purchases Report 1992, includes a new data table. Presented in Table 1 are US utility purchases of uranium and enrichment services by origin country. Also, this report contains additional purchase information covering average price and contract duration. Table 2 is an update of Table 1 and Table 3 is an update of Table 2 from the previous year`s report. The report contains a glossary of terms.

  12. Uranium concentrations in asparagus

    SciTech Connect

    Tiller, B.L.; Poston, T.M.

    1992-05-01

    Concentrations of uranium were determined in asparagus collected from eight locations near and ten locations on the Hanford Site southcentral Washington State. Only one location (Sagemoor) had samples with elevated concentrations. The presence of elevated uranium in asparagus at Sagemoor may be explained by the elevated levels in irrigation water. These levels of uranium are comparable to levels previously reported upstream and downstream of the 300-FF-1 Operable Unit on the Hanford Site (0.0008 {mu}g/g), but were below the 0.020-{mu}g/g level reported for brush collected at Sagemoor in a 1982 study. Concentrations at all other onsite and offsite sample locations were considerably lower than concentrations reported immediately upstream and downstream of the 300-FF-1 Operable Unit. Using an earlier analysis of the uranium concentrations in asparagus collected from the Hanford Site constitutes a very small fraction of the US Department of Energy effective dose equivalent limit of 100 mrem.

  13. Method for the recovery of uranium values from uranium tetrafluoride

    DOEpatents

    Kreuzmann, Alvin B.

    1983-01-01

    The invention is a novel method for the recovery of uranium from dry, particulate uranium tetrafluoride. In one aspect, the invention comprises reacting particulate uranium tetrafluoride and calcium oxide in the presence of gaseous oxygen to effect formation of the corresponding alkaline earth metal uranate and alkaline earth metal fluoride. The product uranate is highly soluble in various acidic solutions wherein the product fluoride is virtually insoluble therein. The product mixture of uranate and alkaline earth metal fluoride is contacted with a suitable acid to provide a uranium-containing solution, from which the uranium is recovered. The invention can achieve quantitative recovery of uranium in highly pure form.

  14. Method for the recovery of uranium values from uranium tetrafluoride

    DOEpatents

    Kreuzmann, A.B.

    1982-10-27

    The invention is a novel method for the recovery of uranium from dry, particulate uranium tetrafluoride. In one aspect, the invention comprises reacting particulate uranium tetrafluoride and calcium oxide in the presence of gaseous oxygen to effect formation of the corresponding alkaline earth metal uranate and alkaline earth metal fluoride. The product uranate is highly soluble in various acidic solutions whereas the product fluoride is virtually insoluble therein. The product mixture of uranate and alkaline earth metal fluoride is contacted with a suitable acid to provide a uranium-containing solution, from which the uranium is recovered. The invention can achieve quantitative recovery of uranium in highly pure form.

  15. ANODIC TREATMENT OF URANIUM

    DOEpatents

    Kolodney, M.

    1959-02-01

    A method is presented for effecting eloctrolytic dissolution of a metallic uranium article at a uniform rate. The uranium is made the anode in an aqueous phosphoric acid solution containing nitrate ions furnished by either ammonium nitrate, lithium nitrate, sodium nitrate, or potassium nitrate. A stainless steel cathode is employed and electrolysls carried out at a current density of about 0.1 to 1 ampere per square inch.

  16. URANIUM SEPARATION PROCESS

    DOEpatents

    Lyon, W.L.

    1962-04-17

    A method of separating uranium oxides from PuO/sub 2/, ThO/sub 2/, and other actinide oxides is described. The oxide mixture is suspended in a fused salt melt and a chlorinating agent such as chlorine gas or phosgene is sparged through the suspension. Uranium oxides are selectively chlorinated and dissolve in the melt, which may then be filtered to remove the unchlorinated oxides of the other actinides. (AEC)

  17. Uranium purchases report 1994

    SciTech Connect

    1995-07-01

    US utilities are required to report to the Secretary of Energy annually the country of origin and the seller of any uranium or enriched uranium purchased or imported into the US, as well as the country of origin and seller of any enrichment services purchased by the utility. This report compiles these data and also contains a glossary of terms and additional purchase information covering average price and contract duration. 3 tabs.

  18. Worldwide developments in uranium

    SciTech Connect

    Hoellen, E.E.

    1987-05-01

    World uranium production will continue to change in most major producing nations. Canadian production will increase and will be increasingly dominated by western producers as eastern Canadian high-cost production declines. Australian production will increase as major projects come into operation before 2000. US production will stabilize through the end of the century. South African production will be dependent upon the worldwide support for economic sanctions. China's entry into the world market injects yet another variable into the already cloudy supply picture. Many risks and uncertainties will face uranium producers through the 1980s. Recognizing that the uranium industry is not a fast-growing market, many existing and potential producers are seeking alternate investment courses, causing a restructuring of the world uranium production industry in ways not anticipated even a few years ago. During the restructuring process, world uranium production will most likely continue to exceed uranium consumption, resulting in a further buildup of world uranium inventories. Inventory sales will continue to redistribute this material. As inventory selling runs its course, users will turn to normal sources of supply, stimulating additional production to meet needs. Stimulation in the form of higher prices will be determined by how fast producers are willing and able to return to the market. Production costs are expected to have an increasing impact as it has become apparent that uranium resources are large in comparison to projected consumption. Conversely, security-of-supply issues have seemed to be of decreasing magnitude as Canada, Australia, and other non-US producers continue to meet delivery commitments.

  19. URANIUM EXTRACTION PROCESS

    DOEpatents

    Baldwin, W.H.; Higgins, C.E.

    1958-12-16

    A process is described for recovering uranium values from acidic aqueous solutions containing hexavalent uranium by contacting the solution with an organic solution comprised of a substantially water-immiscible organlc diluent and an organic phosphate to extract the uranlum values into the organic phase. Carbon tetrachloride and a petroleum hydrocarbon fraction, such as kerosene, are sultable diluents to be used in combination with organlc phosphates such as dibutyl butylphosphonate, trlbutyl phosphine oxide, and tributyl phosphate.

  20. Toxicity of Depleted Uranium

    DTIC Science & Technology

    1997-02-01

    Exposure to Uranium Hexafluoride NUREG /CR- 5566, PNL-7328, Prepared for US Nuclear Regulatory Commission, Washington, DC, 1990. 27. Thun MJ, Baker DB... NUREG /CR-495 1, Prepared for US Nuclear Regulatory Commission, Washington, DC, 1987. 31. Morrow PE, Leach LJ, Smith FA, Goloin RM, Scott JB, Belter HD...of Uranium Hexafluoride, NUREG /CR- 2268, RH, Prepared for Division of Health Siting and Waste Management, Washington, DC, 1982. 32. Eidson AF, Damon

  1. Thermodynamic properties of α-uranium

    NASA Astrophysics Data System (ADS)

    Ren, Zhiyong; Wu, Jun; Ma, Rong; Hu, Guichao; Luo, Chao

    2016-11-01

    The lattice constants and equilibrium atomic volume of α-uranium were calculated by Density Functional Theory (DFT). The first principles calculation results of the lattice for α-uranium are in agreement with the experimental results well. The thermodynamic properties of α-uranium from 0 to 900 K and 0-100 GPa were calculated with the quasi-harmonic Debye model. Volume, bulk modulus, entropy, Debye temperature, thermal expansion coefficient and the heat capacity of α-uranium were calculated. The calculated results show that the bulk modulus and Debye temperature increase with the increasing pressure at a given temperature while decreasing with the increasing temperature at a given pressure. Volume, entropy, thermal expansion coefficient and the heat capacity decrease with the increasing pressure while increasing with the increasing temperature. The theoretical results of entropy, Debye temperature, thermal expansion coefficient and the heat capacity show good agreement with the general trends of the experimental values. The constant-volume heat capacity shows typical Debye T3 power-law behavior at low temperature limit and approaches to the classical asymptotic Dulong-Petit limit at high temperature limit.

  2. Soviet uranium supply capability

    SciTech Connect

    1990-02-01

    For many years, only limited information concerning uranium deposits in the USSR has been available from Soviet sources. The Soviet Union has, however, cooperated in some past efforts to promote interaction with the international scientific community. For example, in 1984 the Soviet Union hosted the 27th International Geological Congress (IGC). The uranium portion included 50 papers, primarily on uranium deposits in sandstone and metamorphic rocks, presented to about 300 members. The IGC sponsored almost 400 geology field trips, the most noteworthy of which was a five-day trip to the Krivoi Rog iron and uranium district in the south-central Ukraine, including visits to two open-pit iron mines and the underground Novaya uranium mine in Zholtye Vody. That conference was reported in detail on the October 1984 NUEXCO Monthly Report. Some other information that has been made available over the years is contained in the April 1985 Report discussion of uranium deposit classifications. Advanced processing technology, low-cost labor, by-product and co-product recovery, and the large existing production capacity enable MAEI to produce nuclear fuel at low cost. The Soviet Union`s reserve base, technological development, and production experience make it one of the world`s leading producers of nuclear fuel. As additional information is made available for publication, NUEXCO will present updated reports on the nuclear fuel cycle facilities in the Soviet Union.

  3. Proceedings of the JOWOG 22C (uranium) meeting

    SciTech Connect

    Nelson, T; Talaber, C; Wood, D H

    1987-01-01

    Lawrence Livermore National Laboratory was pleased to be host to the JOWOG 22C Meeting on June 9-11, 1987. This meeting was one of a continuing series on the subject of uranium and uranium alloys held between representatives of the United Kingdom and the United States under a treaty signed July 3, 1958. These, and similar meetings on other subjects, are controlled by the Department of Energy and the Joint Atomic Information Exchange Group (a combined agency of the Departments of Energy and Defense). The following topics were covered in the meeting: Use of Computers to Simulate Uranium; Corrosion and Chemical Stability; Superplasticity; Bonding, Corrosion, Etc.; Thermomechanical Properties and Fabrication; U-Ti Alloys; Uranium-Niobium Alloys; Physical Metallurgy and Testing; Miscellaneous Subjects; and Production and Facilities/Production Technology.

  4. Reaction of laser-ablated uranium atoms with CO: Infrared spectra of the CUO, CUO{sup {minus}}, OUCCO, ({eta}{sup 2}-C{sub 2})UO{sub 2}, and U(CO){sub x} (x = 1--6) molecules in solid neon

    SciTech Connect

    Zhou, M.; Andrews, L.; Li, J.; Bursten, B.E.

    1999-10-20

    Laser-ablated uranium atoms have been reacted with CO molecules during condensation with neon at 4 K. Absorptions at 1,047.3 and 872.2 cm{sup {minus}1} are assigned to the CUO molecule formed from the insertion reaction that requires activation energy. Isotopic substitution shows that the upper band is largely u-C and the lower band mostly U-O in vibrational character. Absorptions at 2,051.5, 1,361.8, and 841.0 cm{sup {minus}1} are assigned to the OUCCO molecule, which is formed by the CO addition reaction to CUO and ultraviolet-visible photon-induced rearrangement of the U(CO){sub 2} molecule. The OUCCO molecule undergoes further photochemical rearrangement to the (C{sub 2})UO{sub 2} molecule, which is characterized by symmetric and antisymmetric OUO stretching vibrations at 843.2 and 922.1 cm{sup {minus}1}. The uranium carbonyls U(CO){sub x} (x = 1--5) anions, which are formed by electron capture. Relativistic density functional theoretical calculations have been performed for the aforementioned species, which lend strong support to the experimental assignments of the infrared spectra. It is predicted that CUO is a linear singlet molecule with the shortest U-C bond yet characterized, and it has a U-C triple bond with substantial U 5f character. The theoretical analysis also finds that a distorted tetrahedral geometry of (C{sub 2})UO{sub 2} lies much lower in energy than either the bent/linear OUCCO structures or the U(CO){sub 2} uranium dicarbonyl.

  5. A density functional theory study of uranium-doped thoria and uranium adatoms on the major surfaces of thorium dioxide

    NASA Astrophysics Data System (ADS)

    Shields, Ashley E.; Santos-Carballal, David; de Leeuw, Nora H.

    2016-05-01

    Thorium dioxide is of significant research interest for its use as a nuclear fuel, particularly as part of mixed oxide fuels. We present the results of a density functional theory (DFT) study of uranium-substituted thorium dioxide, where we found that increasing levels of uranium substitution increases the covalent nature of the bonding in the bulk ThO2 crystal. Three low Miller index surfaces have been simulated and we propose the Wulff morphology for a ThO2 particle and STM images for the (100), (110), and (111) surfaces studied in this work. We have also calculated the adsorption of a uranium atom and the U adatom is found to absorb strongly on all three surfaces, with particular preference for the less stable (100) and (110) surfaces, thus providing a route to the incorporation of uranium into a growing thoria particle.

  6. Process for electrolytically preparing uranium metal

    DOEpatents

    Haas, Paul A.

    1989-08-01

    A process for making uranium metal from uranium oxide by first fluorinating uranium oxide to form uranium tetrafluoride and next electrolytically reducing the uranium tetrafluoride with a carbon anode to form uranium metal and CF.sub.4. The CF.sub.4 is reused in the fluorination reaction rather than being disposed of as a hazardous waste.

  7. Process for electrolytically preparing uranium metal

    DOEpatents

    Haas, Paul A.

    1989-01-01

    A process for making uranium metal from uranium oxide by first fluorinating uranium oxide to form uranium tetrafluoride and next electrolytically reducing the uranium tetrafluoride with a carbon anode to form uranium metal and CF.sub.4. The CF.sub.4 is reused in the fluorination reaction rather than being disposed of as a hazardous waste.

  8. Evolution of uranium monoxide in femtosecond laser-induced uranium plasmas

    DOE PAGES

    Hartig, Kyle C.; Harilal, Sivanandan S.; Phillips, Mark C.; ...

    2017-05-09

    We report on the observation of uranium monoxide (UO) emission following fs laser ablation (LA) of a uranium metal sample. The formation and evolution of the molecular emission are studied under various ambient air pressures. Observation of UO emission spectra at a rarefied residual air pressure of ~1 Torr indicates that the UO molecule is readily formed in the expanding plasma with trace concentrations of oxygen present within the vacuum chamber. Furthermore, the persistence of the UO emission exceeded that of the atomic emission; however, the molecular emission was delayed in time compared to the atomic emission due to themore » necessary cooling and expansion of the plasma before the UO molecules can form.« less

  9. Influence of uranium hydride oxidation on uranium metal behaviour

    SciTech Connect

    Patel, N.; Hambley, D.; Clarke, S.A.; Simpson, K.

    2013-07-01

    This work addresses concerns that the rapid, exothermic oxidation of active uranium hydride in air could stimulate an exothermic reaction (burning) involving any adjacent uranium metal, so as to increase the potential hazard arising from a hydride reaction. The effect of the thermal reaction of active uranium hydride, especially in contact with uranium metal, does not increase in proportion with hydride mass, particularly when considering large quantities of hydride. Whether uranium metal continues to burn in the long term is a function of the uranium metal and its surroundings. The source of the initial heat input to the uranium, if sufficient to cause ignition, is not important. Sustained burning of uranium requires the rate of heat generation to be sufficient to offset the total rate of heat loss so as to maintain an elevated temperature. For dense uranium, this is very difficult to achieve in naturally occurring circumstances. Areas of the uranium surface can lose heat but not generate heat. Heat can be lost by conduction, through contact with other materials, and by convection and radiation, e.g. from areas where the uranium surface is covered with a layer of oxidised material, such as burned-out hydride or from fuel cladding. These rates of heat loss are highly significant in relation to the rate of heat generation by sustained oxidation of uranium in air. Finite volume modelling has been used to examine the behaviour of a magnesium-clad uranium metal fuel element within a bottle surrounded by other un-bottled fuel elements. In the event that the bottle is breached, suddenly, in air, it can be concluded that the bulk uranium metal oxidation reaction will not reach a self-sustaining level and the mass of uranium oxidised will likely to be small in relation to mass of uranium hydride oxidised. (authors)

  10. Isotopic Analysis of Uranium in NIST SRM Glass by Femtosecond Laser Ablation

    SciTech Connect

    Duffin, Andrew M.; Hart, Garret L.; Hanlen, Richard C.; Eiden, Gregory C.

    2013-05-19

    We employed femtosecond Laser Ablation Multicollector Inductively Coupled Mass Spectrometry for the 11 determination of uranium isotope ratios in a series of standard reference material glasses (NIST 610, 612, 614, and 12 616). This uranium concentration in this series of SRM glasses is a combination of isotopically natural uranium in 13 the materials used to make the glass matrix and isotopically depleted uranium added to increase the uranium 14 elemental concentration across the series. Results for NIST 610 are in excellent agreement with literature values. 15 However, other than atom percent 235U, little information is available for the remaining glasses. We present atom 16 percent and isotope ratios for 234U, 235U, 236U, and 238U for all four glasses. Our results show deviations from the 17 certificate values for the atom percent 235U, indicating the need for further examination of the uranium isotopes in 18 NIST 610-616. Our results are fully consistent with a two isotopic component mixing between the depleted 19 uranium spike and natural uranium in the bulk glass.

  11. Remarkable rare-earth metal silicide oxides with planar Si6 rings.

    PubMed

    Wang, Limin; Tang, Zhongjia; Lorenz, Bernd; Guloy, Arnold M

    2008-08-27

    New rare-earth silicide oxides, La10Si8O3 (1) and Ce10Si8O3 (2), were synthesized through high-temperature reactions of the pure elements under controlled oxygen atmosphere conditions. The remarkable silicides crystallize in a unique crystal structure (space group P6/mmm; a = 10.975(3) A (La) and 10.844(1) A (Ce); c = 4.680(1) A (La) and 4.561(1) A (Ce)) that features a 3-D framework of corner-shared O-centered (La/Ce)6 octahedra, reminiscent of hexagonal tungsten bronzes, with planar Si6 rings enclosed within its hexagonal channels. Band structure calculations indicate the compounds are metallic, with optimized La-Si bonds, and a benzene-like [Si6]6- anion. Compound 1 exhibits temperature independent paramagnetism. Compound 2 exhibits Curie-Weiss paramagnetism, and an antiferromagnetic ordering below 7 K.

  12. On the diffraction pattern of bundled rare-earth silicide Nanowires on Si(001).

    PubMed

    Timmer, Frederic; Bahlmann, Jascha; Wollschlaeger, Joachim

    2017-08-24

    Motivated by the complex diffraction pattern observed for bundled rare-earth silicide nanowires on the Si(001) surface we investigate the influence of the width and the spacing distribution of the nanowires on the diffraction pattern. The diffraction pattern of the bundled rare-earth silicide nanowires is analyzed by the binary surface technique applying a kinematic approach to diffraction. Assuming a categorical distribution for the (individual) nanowire size and a Poisson distribution for the size of the spacing between adjacent nanowire-bundles we are able to determine the parameters of these distributions and derive an expression for the distribution of the nanowire-bundle size. Additionally, the comparison of our simulations to the experimental diffraction pattern reveal that a (1 × 1)-periodicity on top of the nanowires has to be assumed for a good match. © 2017 IOP Publishing Ltd.

  13. Effect of Saturation Pressure Difference on Metal–Silicide Nanopowder Formation in Thermal Plasma Fabrication

    PubMed Central

    Shigeta, Masaya; Watanabe, Takayuki

    2016-01-01

    A computational investigation using a unique model and a solution algorithm was conducted, changing only the saturation pressure of one material artificially during nanopowder formation in thermal plasma fabrication, to highlight the effects of the saturation pressure difference between a metal and silicon. The model can not only express any profile of particle size–composition distribution for a metal–silicide nanopowder even with widely ranging sizes from sub-nanometers to a few hundred nanometers, but it can also simulate the entire growth process involving binary homogeneous nucleation, binary heterogeneous co-condensation, and coagulation among nanoparticles with different compositions. Greater differences in saturation pressures cause a greater time lag for co-condensation of two material vapors during the collective growth of the metal–silicide nanopowder. The greater time lag for co-condensation results in a wider range of composition of the mature nanopowder.

  14. Development of fused slurry silicide coatings for tantalum reentry heat shields

    NASA Technical Reports Server (NTRS)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    A fused slurry silicide coating was developed to provide atmospheric reentry protection for the 90Ta-lOW alloy. Overlaying the silicide with a highly refractory glass greatly improved total lifetime and reliability of the coating system. Low pressure, slow cycle lifetimes in excess of 100 cycles were consistently recorded for 1700 K - 13 and 1300 N/sq m test conditions. A minimum of 25 cycles was obtained for 1810 K - 1300 N/sq m conditions. About 50 simulated reentry cycles (variable temperature, pressure, and stress) were endured by coated 1-inch miniature heat shield panels when exposed to a maximum of 1700 K and either internal or external pressure conditions.

  15. Synthesis of silicon nanotubes with cobalt silicide ends using anodized aluminum oxide template

    NASA Astrophysics Data System (ADS)

    Zhang, Zhang; Liu, Lifeng; Shimizu, Tomohiro; Senz, Stephan; Gösele, Ulrich

    2010-02-01

    Silicon nanotubes (SiNTs) are compatible with Si-based semiconductor technology. In particular, the small diameters and controllable structure of such nanotubes are remaining challenges. Here we describe a method to fabricate SiNTs intrinsically connected with cobalt silicide ends based on highly ordered anodic aluminum oxide (AAO) templates. Size and growth direction of the SiNTs can be well controlled via the templates. The growth of SiNTs is catalyzed by the Co nanoparticles reduced on the pore walls of the AAO after annealing, with a controllable thickness at a given growth temperature and time. Simultaneously, cobalt silicide forms on the bottom side of the SiNTs.

  16. Cobalt silicide formation caused by arsenic ion beam mixing and rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Ye, Min; Burte, Edmund; Tsien, Pei-Hsin; Ryssel, Heiner

    1991-04-01

    Ion beam mixing and rapid thermal annealing (RTA) were used to prepare low resistivity (≈ 23 μΩ cm) cobalt disilicide, CoSi 2, layers. Through-metal As + ion implantation causes some mixing between Co and Si resulting in the formation of cobalt suicides. By using RTA, the silicide formation happens in the phase sequence Co 2Si, CoSi and CoSi 2. Samples which were only subjected to a one-step high temperature RTA process ( T ≥. 900°C, 1s) show significant lateral growth of cobalt suicides. By ion beam mixing of Co and Si this lateral silicide growth could be reduced efficiently. Furthermore one can get a very homogeneous CoSi 2 layer.

  17. Low-temperature ordering of FePt by formation of silicides in underlayers

    NASA Astrophysics Data System (ADS)

    Lai, Chih-Huang; Chiang, C. C.; Yang, C. H.

    2005-05-01

    A low-temperature ordering of FePt was achieved by introducing dynamic stress. The ordering temperature of FePt was reduced to 300°C by using a Cu underlayer on the HF-cleaned Si (001) substrate. An in-plane coercivity as high as 6900Oe can be obtained after post-annealing at 300°C. The formation of copper silicide, Cu3Si, during post-annealing induces a dynamic stress on FePt films, which greatly reduces the ordering temperature. Pt silicides also help to reduce the ordering temperature. The low-temperature ordering of FePt can be realized with Si /Cu underlayers on glass substrates.

  18. Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

    SciTech Connect

    Pizzocchero, Filippo; Bøggild, Peter; Booth, Timothy J.

    2013-09-21

    We show that surface arc-discharge deposited carbon plays a critical intermediary role in the breakdown of thermally grown oxide diffusion barriers of 90 nm on a silicon wafer at 1035 °C in an Ar/H{sub 2} atmosphere, resulting in the formation of epitaxial copper silicide particles in ≈ 10 μm wide channels, which are aligned with the intersections of the (100) surface of the wafer and the (110) planes on an oxidized silicon wafer, as well as endotaxial copper silicide nanoparticles within the wafer bulk. We apply energy dispersive x-ray spectroscopy, in combination with scanning and transmission electron microscopy of focused ion beam fabricated lammelas and trenches in the structure to elucidate the process of their formation.

  19. Development of a fused slurry silicide coating for the protection of tantalum alloys

    NASA Technical Reports Server (NTRS)

    Packer, C. M.; Perkins, R. A.

    1974-01-01

    Results are reported of a research program to develop a reliable high-performance, fused slurry silicide protective coating for a tantalum-10 tungsten alloy for use at 1427 to 1538 C at 0.1 to 10 torr air pressure under cyclic temperature conditions. A review of silicide coating performance under these conditions indicated that the primary wear-out mode is associated with widening of hairline fissures in the coating. Consideration has been given to modifying the oxidation products that form on the coating surface to provide a seal for these fissures and to minimize their widening. On the basis of an analysis of the phase relationships between silica and various other oxides, a coating having the slurry composition 2.5Mn-33Ti-64.5Si was developed that is effective in the pressure range from 1 to 10 torr.

  20. Optical characteristics of an epitaxial Fe3Si/Si(111) iron silicide film

    NASA Astrophysics Data System (ADS)

    Tarasov, I. A.; Popov, Z. I.; Varnakov, S. N.; Molokeev, M. S.; Fedorov, A. S.; Yakovlev, I. A.; Fedorov, D. A.; Ovchinnikov, S. G.

    2014-07-01

    The dispersion of the relative permittivity ɛ of a 27-nm-thick epitaxial Fe3Si iron silicide film has been measured within the E = 1.16-4.96 eV energy range using the spectroscopic ellipsometry technique. The experimental data are compared to the relative permittivity calculated in the framework of the density functional theory using the GGA-PBE approximation. For Fe3Si, the electronic structure and the electronic density of states (DOS) are calculated. The analysis of the frequencies corresponding to the transitions between the DOS peaks demonstrates qualitative agreement with the measured absorption peaks. The analysis of the single wavelength laser ellipsometry data obtained in the course of the film growth demonstrates that a continuous layer of Fe3Si iron silicide film is formed if the film thickness achieves 5 nm.

  1. Analysis of beryllium and depleted uranium: An overview of detection methods in aerosols and soils

    SciTech Connect

    Camins, I.; Shinn, J.H.

    1988-06-01

    We conducted a survey of commercially available methods for analysis of beryllium and depleted uranium in aerosols and soils to find a reliable, cost-effective, and sufficiently precise method for researchers involved in environmental testing at the Yuma Proving Ground, Yuma, Arizona. Criteria used for evaluation include cost, method of analysis, specificity, sensitivity, reproducibility, applicability, and commercial availability. We found that atomic absorption spectrometry with graphite furnace meets these criteria for testing samples for beryllium. We found that this method can also be used to test samples for depleted uranium. However, atomic absorption with graphite furnace is not as sensitive a measurement method for depleted uranium as it is for beryllium, so we recommend that quality control of depleted uranium analysis be maintained by testing 10 of every 1000 samples by neutron activation analysis. We also evaluated 45 companies and institutions that provide analyses of beryllium and depleted uranium. 5 refs., 1 tab.

  2. METHOD OF RECOVERING URANIUM COMPOUNDS

    DOEpatents

    Poirier, R.H.

    1957-10-29

    S>The recovery of uranium compounds which have been adsorbed on anion exchange resins is discussed. The uranium and thorium-containing residues from monazite processed by alkali hydroxide are separated from solution, and leached with an alkali metal carbonate solution, whereby the uranium and thorium hydrorides are dissolved. The carbonate solution is then passed over an anion exchange resin causing the uranium to be adsorbed while the thorium remains in solution. The uranium may be recovered by contacting the uranium-holding resin with an aqueous ammonium carbonate solution whereby the uranium values are eluted from the resin and then heating the eluate whereby carbon dioxide and ammonia are given off, the pH value of the solution is lowered, and the uranium is precipitated.

  3. Self-assembled rare-earth silicide nanowires on Si(001)

    SciTech Connect

    Nogami, J.; Liu, B. Z.; Katkov, M. V.; Ohbuchi, C.; Birge, Norman O.

    2001-06-15

    This paper presents scanning tunneling microscope images of several rare-earth metal silicides grown on silicon (001). For certain of the metals studied (Dy, Ho), an anisotropy in lattice match with the substrate results in the formation of nanowires. These nanowires have desirable properties such as nanometer lateral dimension, crystalline structure with a low density of defects, and micrometer scale length. Tunneling spectroscopy on the nanowires indicates that they are metallic.

  4. Practical field repair of fused slurry silicide coating for space shuttle t.p.s.

    NASA Technical Reports Server (NTRS)

    Reznik, B. D.

    1971-01-01

    Study of short-time high-temperature diffusion treatments as part of a program of development of methods of reapplying fused slurry silicide coating in the field. The metallographic structure and oxidation behavior of R512E applied to Cb-752 coated under simulated field repair conditions was determined. Oxidation testing in reduced pressure environment has shown that performance equivalent to furnace-processed specimens can be obtained in a two-minute diffusion at 2700 F.

  5. Isothermal Diagrams of Precipitation of Silicide and Aluminide Phases in Refractory Titanium Alloys

    NASA Astrophysics Data System (ADS)

    Popov, A. A.; Popova, M. A.

    2017-03-01

    Processes of precipitation of silicides and aluminides in commercial titanium alloys under different modes of heat treatment are studied. The effect of alloying on the types of precipitating particles is considered. The temperature ranges of formation of intermetallics are determined and the possible mechanisms of transformation of particles of different types are discussed. A schematic isothermal diagram of decomposition of metastable phases in refractory titanium alloys is suggested.

  6. Microbial reduction of uranium

    USGS Publications Warehouse

    Lovley, D.R.; Phillips, E.J.P.; Gorby, Y.A.; Landa, E.R.

    1991-01-01

    REDUCTION of the soluble, oxidized form of uranium, U(VI), to insoluble U(IV) is an important mechanism for the immobilization of uranium in aquatic sediments and for the formation of some uranium ores1-10. U(VI) reduction has generally been regarded as an abiological reaction in which sulphide, molecular hydrogen or organic compounds function as the reductant1,2,5,11. Microbial involvement in U(VI) reduction has been considered to be limited to indirect effects, such as microbial metabolism providing the reduced compounds for abiological U(VI) reduction and microbial cell walls providing a surface to stimulate abiological U(VI) reduction1,12,13. We report here, however, that dissimilatory Fe(III)-reducing microorganisms can obtain energy for growth by electron transport to U(VI). This novel form of microbial metabolism can be much faster than commonly cited abiological mechanisms for U(VI) reduction. Not only do these findings expand the known potential terminal electron acceptors for microbial energy transduction, they offer a likely explanation for the deposition of uranium in aquatic sediments and aquifers, and suggest a method for biological remediation of environments contaminated with uranium.

  7. Uranium hexafluoride handling. Proceedings

    SciTech Connect

    Not Available

    1991-12-31

    The United States Department of Energy, Oak Ridge Field Office, and Martin Marietta Energy Systems, Inc., are co-sponsoring this Second International Conference on Uranium Hexafluoride Handling. The conference is offered as a forum for the exchange of information and concepts regarding the technical and regulatory issues and the safety aspects which relate to the handling of uranium hexafluoride. Through the papers presented here, we attempt not only to share technological advances and lessons learned, but also to demonstrate that we are concerned about the health and safety of our workers and the public, and are good stewards of the environment in which we all work and live. These proceedings are a compilation of the work of many experts in that phase of world-wide industry which comprises the nuclear fuel cycle. Their experience spans the entire range over which uranium hexafluoride is involved in the fuel cycle, from the production of UF{sub 6} from the naturally-occurring oxide to its re-conversion to oxide for reactor fuels. The papers furnish insights into the chemical, physical, and nuclear properties of uranium hexafluoride as they influence its transport, storage, and the design and operation of plant-scale facilities for production, processing, and conversion to oxide. The papers demonstrate, in an industry often cited for its excellent safety record, continuing efforts to further improve safety in all areas of handling uranium hexafluoride. Selected papers were processed separately for inclusion in the Energy Science and Technology Database.

  8. PRODUCTION OF URANIUM HEXAFLUORIDE

    DOEpatents

    Fowler, R.D.

    1957-08-27

    A process for the production of uranium hexafluoride from the oxides of uranium is reported. In accordance with the method, the higher oxides of uranium may be reduced to uranium dioxide (UO/sub 2/), the latter converted into uranium tetrafluoride by reaction with hydrogen fluoride, and the UF/sub 4/ converted to UF/sub 6/ by reaction with a fluorinating agent, such as CoF/sub 3/. The UO/sub 3/ or U/sub 3/O/sub 8/ is placed in a reac tion chamber in a copper boat or tray enclosed in a copper oven, and heated to 500 to 650 deg C while hydrogen gas is passed through the oven. After nitrogen gas is used to sweep out the hydrogen and the water vapor formed, and while continuing to inaintain the temperature between 400 deg C and 600 deg C, anhydrous hydrogen fluoride is passed through. After completion of the conversion of UO/sub 2/ to UF/sub 4/ the temperature of the reaction chamber is lowered to about 400 deg C or less, the UF/sub 4/ is mixed with the requisite quantity of CoF/sub 3/, and after evacuating the chamber, the mixture is heated to 300 to 400 deg C, and the resulting UF/sub 6/ is led off and delivered to a condenser.

  9. Uranium deposits of Brazil

    SciTech Connect

    1991-09-01

    Brazil is a country of vast natural resources, including numerous uranium deposits. In support of the country`s nuclear power program, Brazil has developed the most active uranium industry in South America. Brazil has one operating reactor (Angra 1, a 626-MWe PWR), and two under construction. The country`s economic challenges have slowed the progress of its nuclear program. At present, the Pocos de Caldas district is the only active uranium production. In 1990, the Cercado open-pit mine produced approximately 45 metric tons (MT) U{sub 3}O{sub 8} (100 thousand pounds). Brazil`s state-owned uranium production and processing company, Uranio do Brasil, announced it has decided to begin shifting its production from the high-cost and nearly depleted deposits at Pocos de Caldas, to lower-cost reserves at Lagoa Real. Production at Lagoa Real is schedules to begin by 1993. In addition to these two districts, Brazil has many other known uranium deposits, and as a whole, it is estimated that Brazil has over 275,000 MT U{sub 3}O{sub 8} (600 million pounds U{sub 3}O{sub 8}) in reserves.

  10. Large-area Co-silicide nanodot arrays produced by colloidal nanosphere lithography and thermal annealing.

    PubMed

    Cheng, S L; Wong, S L; Lu, S W; Chen, H

    2008-09-01

    We report here the successful fabrication of large-area size-tunable periodic arrays of cobalt and Co-silicide nanodots on silicon substrates by employing the colloidal nanosphere lithography (NSL) technique and heat treatments. The growth of low-resistivity epitaxial CoSi(2) was found to be more favorable for the samples with smaller Co nanodot sizes. The sizes of the epitaxial CoSi(2) nanodots can be tuned from 50 to 100 nm by varying the diameter of the colloidal spheres and annealing temperatures. The epitaxial CoSi(2) nanodots were found to grow with an epitaxial orientation with respect to the (001)Si substrates: [001]CoSi(2)//[001]Si and (200)CoSi(2)//(400)Si. From the results of planview HRTEM, XTEM, and SAED analysis, the epitaxial CoSi(2) nanodots were identified to be inverse pyramids in shape, and the average sizes of the faceted silicide nanodots were measured to decrease with annealing temperature. The observed results present the exciting prospect that with appropriate controls, the colloidal NSL technique promises to facilitate the growth of a variety of well-ordered silicide nanodots with selected shape, size, and periodicity.

  11. High current metal ion implantation to synthesize some conducting metal-silicides

    SciTech Connect

    Liu, B. X.; Gao, K. Y.

    1999-06-10

    High current metal-ion implantation by a metal vapor vacuum arc ion source was conducted to synthesize some conducting metal-silicides. It was found that C54-TiSi{sub 2}, ZrSi{sub 2}, NiSi{sub 2}, CoSi{sub 2}, {beta}-FeSi{sub 2}, NbSi{sub 2} and TaSi{sub 2} layers on Si wafers with good electric properties could be obtained directly after implantation. In comparison, the formation of some other silicides like {alpha}-FeSi{sub 2}, NbSi{sub 2}, TaSi{sub 2}, tetragonal-WSi{sub 2} and tetragonal-MoSi{sub 2} required an additional post-annealing to improve their crystallinity and thus their electric properties. Interestingly, the NiSi{sub 2} layers of superior electric properties were obtained at a selected Ni-ion current density of 35 {mu}A/cm{sup 2}. At this current, a beam heating raised the Si wafer to a specific temperature of 380 deg. C, at which the size difference between NiSi{sub 2} and Si lattices was nil. The resistivity of the NiSi{sub 2} layers so obtained was much lower than that of the Ni-disilicide formed by solid-state reaction at >750 deg. C. The formation mechanism of the above metal-silicides and the associated electric properties will also be discussed.

  12. Palladium silicide formation under the influence of nitrogen and oxygen impurities

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

    1985-01-01

    The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

  13. Palladium silicide formation under the influence of nitrogen and oxygen impurities

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

    1985-01-01

    The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

  14. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    SciTech Connect

    Yuryev, V. A. Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-05-28

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.

  15. Nickel silicide for Ni/Cu contact mono-silicon solar cells

    NASA Astrophysics Data System (ADS)

    Min, Seon Kyu; Kim, Dong Ho; Lee, Soo Hong

    2013-07-01

    A solar cell contact needs to be as thin as possible and have high conductivity since a thick contact causes shading loss and reduced current. Plating is a very suitable method for making a metal contact, and nickel is a high conductivity metal which is easy to form into a contact using electroless plating. After the nickel is plated on the silicon substrate, the nickel contact should be fired in order to form nickel silicide. Nickel silicide is used for the seed layer of the Cu contact for silicon solar cells. In this study, we replaced the screen-printed contact of the Passivated Emitter Solar Cell (PESC) with a Ni/Cu contact that has a selective emitter. The nickel layer was used as the seed layer, adhesion layer, and Cu diffusion barrier. The main contact was formed by plating the copper. The firing conditions of a conventional furnace were varied in order to form nickel silicide. Consequently, we achieved the best solar cell efficiency of 18.15%.

  16. Magnesium reduction of uranium oxide

    SciTech Connect

    Elliott, G.R.B.

    1985-08-13

    A method and apparatus are provided for reducing uranium oxide with magnesium to form uranium metal. The reduction is carried out in a molten-salt solution of density greater than 3.4 grams per cubic centimeter, thereby allowing the uranium product to sink and the magnesium oxide byproduct to float, consequently allowing separation of product and byproduct.

  17. Uranium immobilization and nuclear waste

    SciTech Connect

    Duffy, C.J.; Ogard, A.E.

    1982-02-01

    Considerable information useful in nuclear waste storage can be gained by studying the conditions of uranium ore deposit formation. Further information can be gained by comparing the chemistry of uranium to nuclear fission products and other radionuclides of concern to nuclear waste disposal. Redox state appears to be the most important variable in controlling uranium solubility, especially at near neutral pH, which is characteristic of most ground water. This is probably also true of neptunium, plutonium, and technetium. Further, redox conditions that immobilize uranium should immobilize these elements. The mechanisms that have produced uranium ore bodies in the Earth's crust are somewhat less clear. At the temperatures of hydrothermal uranium deposits, equilibrium models are probably adequate, aqueous uranium (VI) being reduced and precipitated by interaction with ferrous-iron-bearing oxides and silicates. In lower temperature roll-type uranium deposits, overall equilibrium may not have been achieved. The involvement of sulfate-reducing bacteria in ore-body formation has been postulated, but is uncertain. Reduced sulfur species do, however, appear to be involved in much of the low temperature uranium precipitation. Assessment of the possibility of uranium transport in natural ground water is complicated because the system is generally not in overall equilibrium. For this reason, Eh measurements are of limited value. If a ground water is to be capable of reducing uranium, it must contain ions capable of reducing uranium both thermodynamically and kinetically. At present, the best candidates are reduced sulfur species.

  18. PROCESS OF PREPARING URANIUM CARBIDE

    DOEpatents

    Miller, W.E.; Stethers, H.L.; Johnson, T.R.

    1964-03-24

    A process of preparing uranium monocarbide is de scribed. Uranium metal is dissolved in cadmium, zinc, cadmium-- zinc, or magnesium-- zinc alloy and a small quantity of alkali metal is added. Addition of stoichiometric amounts of carbon at 500 to 820 deg C then precipitates uranium monocarbide. (AEC)

  19. Helium on Venus - Implications for uranium and thorium

    NASA Technical Reports Server (NTRS)

    Prather, M. J.; Mcelroy, M. B.

    1983-01-01

    Helium is removed at an average rate of 10 to the 6th atoms per square centimeter per second from Venus's atmosphere by the solar wind following ionization above the plasmapause. The surface source of helium-4 on Venus is similar to that on earth, suggesting comparable abundances of crustal uranium and thorium.

  20. Helium on Venus - Implications for uranium and thorium

    NASA Technical Reports Server (NTRS)

    Prather, M. J.; Mcelroy, M. B.

    1983-01-01

    Helium is removed at an average rate of 10 to the 6th atoms per square centimeter per second from Venus's atmosphere by the solar wind following ionization above the plasmapause. The surface source of helium-4 on Venus is similar to that on earth, suggesting comparable abundances of crustal uranium and thorium.

  1. Structural and electrochemical properties of nanostructured nickel silicides by reduction and silicification of high-surface-area nickel oxide

    SciTech Connect

    Chen, Xiao; Zhang, Bingsen; Li, Chuang; Shao, Zhengfeng; Su, Dangsheng; Williams, Christopher T.; Liang, Changhai

    2012-03-15

    Graphical abstract: Nanostructured nickel silicides have been synthesized by reduction and silification of high-surface-area nickel oxide, and exhibited remarkably like-noble metal property, lower electric resistivity, and ferromagnetism at room temperature. Highlights: Black-Right-Pointing-Pointer NiSi{sub x} have been prepared by reduction and silification of high-surface-area NiO. Black-Right-Pointing-Pointer The structure of nickel silicides changed with increasing reaction temperature. Black-Right-Pointing-Pointer Si doping into nickel changed the magnetic properties of metallic nickel. Black-Right-Pointing-Pointer NiSi{sub x} have remarkably lower electric resistivity and like-noble metal property. -- Abstract: Nanostructured nickel silicides have been prepared by reduction and silicification of high-surface-area nickel oxide (145 m{sup 2} g{sup -1}) produced via precipitation. The prepared materials were characterized by nitrogen adsorption, X-ray diffraction, thermal analysis, FT-IR spectroscopy, scanning electron microscopy, transmission electron microscopy, magnetic and electrochemical measurements. The nickel silicide formation involves the following sequence: NiO (cubic) {yields} Ni (cubic) {yields} Ni{sub 2}Si (orthorhombic) {yields} NiSi (orthorhombic) {yields} NiSi{sub 2} (cubic), with particles growing from 13.7 to 21.3 nm. The nickel silicides are ferromagnetic at room temperature, and their saturation magnetization values change drastically with the increase of Si content. Nickel silicides have remarkably low electrical resistivity and noble metal-like properties because of a constriction of the Ni d band and an increase of the electronic density of states. The results suggest that such silicides are promising candidates as inexpensive yet functional materials for applications in electrochemistry as well as catalysis.

  2. Tris(bis(trimethylsilyl)amido)uranium: Compounds with tri-, tetra-, and penta-valent uranium

    SciTech Connect

    Stewart, J.L.

    1988-04-01

    This trivalent uranium compound, serves as a precursor to new tri-, tetra-, and penta-valent uranium species. The geometry about the U atom is pyramidal. Lewis-base coordination compounds of U(N(SiMe/sub 3/)/sub 2/)/sub 3/ with a one-to-one- ratio of Lewis base to uranium were isolated with pyridine, 4-dimethylamino-pyridine, 2,6-Me/sub 2/-C/sub 6/H/sub 3/NC, and TPO. Two-to-one coordination compounds were obtained with t-butylnitrile and t-butylisocyanide. Compounds with more sterically demanding bases could not be isolated. The expected decrease in U-N(SiMe/sub 3/)/sub 2/ bond length with increase in oxidation state is not observed. Reaction of ClU(N(SiMe/sub 3/)/sub 2/)/sub 3/and Li(NH(p-tolyl)) yields the uranium (IV) dimer, U/sub 2/(N(SiMe/sub 3/)/sub 2/)/sub 4/(..mu..-N(p-tolyl))/sub 2/. Reaction with 2,4,6-triemethylaniline produces a dimer. Analogous substitution products could not be obtained with aniline or p-toluidine. t-Bu/sub 3/CO/sup /minus//, t-Bu/sub 2/CHO/sup /minus//, and t-Bu/sub 3/SiO/sup /minus// are used to synthesize new tetravalent, mononuclear uranium compounds. Reaction of ClU(tritox)/sub 3/ with alkyllithium reagents leads to isolation of RU(tritox)/sub 3/. The reaction of U(ditox)/sub 4/ with MeLi affords the addition product U(ditox)/sub 4/(Me)Li, whose crystal structure is described. Preparation of uranium silox compounds is reported. 97 refs., 26 figs., 39 tabs.

  3. Enhancement of Extraction of Uranium from Seawater

    SciTech Connect

    Al-Sheikhly, Mohamad; Dietz, Travis; Tsinas, Zois; Tomaszewski, Claire; Pazos, Ileana M.; Nigliazzo, Olga; Li, Weixing; Adel-Hadadi, Mohamad; Barkatt, Aaron

    2016-04-01

    Even at a concentration of 3 μg/L, the world’s oceans contain a thousand times more uranium than currently know terrestrial sources. In order to take advantage of this stockpile, methods and materials must be developed to extract it efficiently, a difficult task considering the very low concentration of the element and the competition for extraction by other atoms in seawater such as sodium, calcium, and vanadium. The majority of current research on methods to extract uranium from seawater are vertical explorations of the grafting of amidoxime ligand, which was originally discovered and promoted by Japanese studies in the late 1980s. Our study expands on this research horizontally by exploring the effectiveness of novel uranium extraction ligands grafted to the surface of polymer substrates using radiation. Through this expansion, a greater understanding of uranium binding chemistry and radiation grafting effects on polymers has been obtained. While amidoxime-functionalized fabrics have been shown to have the greatest extraction efficiency so far, they suffer from an extensive chemical processing step which involves treatment with powerful basic solutions. Not only does this add to the chemical waste produced in the extraction process and add to the method’s complexity, but it also significantly impacts the regenerability of the amidoxime fabric. The approach of this project has been to utilize alternative, commercially available monomers capable of extracting uranium and containing a carbon-carbon double bond to allow it to be grafted using radiation, specifically phosphate, oxalate, and azo monomers. The use of commercially available monomers and radiation grafting with electron beam or gamma irradiation will allow for an easily scalable fabrication process once the technology has been optimized. The need to develop a cheap and reliable method for extracting uranium from seawater is extremely valuable to energy independence and will extend the quantity of

  4. PROCESS FOR RECOVERING URANIUM

    DOEpatents

    MacWood, G.E.; Wilder, C.D.; Altman, D.

    1959-03-24

    A process is described for recovering uranium from deposits on stainless steel liner surfaces of calutrons. The deposit is removed from the stainless steel surface by washing with aqueous nitric acid. The solution obtained containing uranium, chromium, nickels copper, and iron is treated with excess of ammonium hydroxide to precipitatc the uranium, irons and chromium and convert thc nickel and copper to soluble ammonia complexions. The precipitated material is removed, dried, and treated with carbon tetrachloride at an elevated temperature of about 500 to 600 deg C to form a vapor mixture of UCl/sub 4/, UCl/sub 5/, FeCl/ sub 3/, and CrCl/sub 4/. The UCl/sub 4/ is separated from this vapor mixture by selective fractional condensation at a temprrature of about 300 to400 deg C.

  5. Process for recovering uranium

    DOEpatents

    MacWood, G. E.; Wilder, C. D.; Altman, D.

    1959-03-24

    A process useful in recovering uranium from deposits on stainless steel liner surfaces of calutrons is presented. The deposit is removed from the stainless steel surface by washing with aqueous nitric acid. The solution obtained containing uranium, chromium, nickel, copper, and iron is treated with an excess of ammonium hydroxide to precipitnte the uranium, iron, and chromium and convert the nickel and copper to soluble ammonio complexions. The precipitated material is removed, dried and treated with carbon tetrachloride at an elevated temperature of about 500 to 600 deg C to form a vapor mixture of UCl/ sub 4/, UCl/sub 5/, FeCl/sub 3/, and CrCl/sub 4/. The UCl/sub 4/ is separated from this vapor mixture by selective fractional condensation at a temperature of about 500 to 400 deg C.

  6. EXTRACTION OF URANIUM

    DOEpatents

    Kesler, R.D.; Rabb, D.D.

    1959-07-28

    An improved process is presented for recovering uranium from a carnotite ore. In the improved process U/sub 2/O/sub 5/ is added to the comminuted ore along with the usual amount of NaCl prior to roasting. The amount of U/sub 2/O/ sub 5/ is dependent on the amount of free calcium oxide and the uranium in the ore. Specifically, the desirable amount of U/sub 2/O/sub 5/ is 3.2% for each 1% of CaO, and 5 to 6% for each 1% of uranium. The mixture is roasted at about 1560 deg C for about 30 min and then leached with a 3 to 9% aqueous solution of sodium carbonate.

  7. Magnetic phase transitions and electronic structure of the manganese silicides

    NASA Astrophysics Data System (ADS)

    Vinokurova, L.; Ivanov, V.; Kulatov, E.; Vlasov, A.

    1990-12-01

    The results of the experimental investigations of physical properties of the single crystals of Mn 5Si 3 and MnSi≈ l.7 doped by Ge and Cr are presented. For the first time an existence in Mn 5Si 3 the first order metamagnetic transition have been observed. From the experimental data it is found that the properties of the induced ferromagnetic state in Mn 5Si 3 and the doped higher manganese suicides can be interpreted on the basis of the band model. Theoretical calculations conclude that the band character of magnetism in Mn 5Si 3 is due to Mn I atoms in 4(d) positions while atoms in 6(g) positions are covalent bonded and more localized.

  8. Superconductivity in layered binary silicides: A density functional theory study

    NASA Astrophysics Data System (ADS)

    Flores-Livas, José A.; Debord, Régis; Botti, Silvana; San Miguel, Alfonso; Pailhès, Stéphane; Marques, Miguel A. L.

    2011-11-01

    A class of metal disilicides (of the form XSi2, where X is a divalent metal) crystallizes in the EuGe2 structure, formed by hexagonal corrugated silicon planes intercalated with metal atoms. These compounds are superconducting like other layered superconductors, such as MgB2. Moreover, their properties can be easily tuned either by external pressure or by negative chemical pressure (i.e., by changing the metal), which makes disilicides an ideal testbed to study superconductivity in layered systems. In view of this, we present an extensive density functional theory study of the electronic and phonon band structures as well as the electron-phonon interaction of metal disilicides. Our results explain the variation of the superconducting transition temperature with pressure and the species of the intercalating atom, and allow us to predict superconductivity for compounds not yet synthesized belonging to this family.

  9. Solubility characterization of airborne uranium from a uranium recycling plant.

    PubMed

    Metzger, Robert; Cole, Leslie

    2004-07-01

    Solubility profiles of uranium dusts in a uranium recycling plant were determined by performing in vitro solubility tests on breathing zone air samples conducted in all process areas of the processing plant. The recycling plant produces high density shields, closed end tubes that are punched and formed from uranium sheet metal, and high-fired uranium oxide, which is used as a catalyst. The recycled uranium is cut and melted in a vacuum furnace, and part of the molten uranium is poured into molds for further processing. Air samples were taken in process areas under normal working conditions. The dissolution rate of the uranium in a simulant solution of extracellular airway lining fluid (Gamble's solution) was then determined over the next 28 d. Airborne uranium in the oxide section of the plant was found to be highly insoluble with 99% of the uranium having a dissolution half time in excess of 100 d. The solubility of the airborne uranium in other areas of the facility was only slightly more soluble with over 90% of the airborne uranium having dissolution half times in excess of 90 d.

  10. PROCESS OF RECOVERING URANIUM

    DOEpatents

    Price, T.D.; Jeung, N.M.

    1958-06-17

    An improved precipitation method is described for the recovery of uranium from aqueous solutions. After removal of all but small amounts of Ni or Cu, and after complexing any iron present, the uranium is separated as the peroxide by adding H/sub 2/O/sub 2/. The improvement lies in the fact that the addition of H/sub 2/O/sub 2/ and consequent precipitation are carried out at a temperature below the freezing; point of the solution, so that minute crystals of solvent are present as seed crystals for the precipitation.

  11. PRODUCTION OF URANIUM TUBING

    DOEpatents

    Creutz, E.C.

    1958-04-15

    The manufacture of thin-walled uranium tubing by the hot-piercing techique is described. Uranium billets are preheated to a temperature above 780 d C. The heated billet is fed to a station where it is engaged on its external surface by three convex-surfaced rotating rollers which are set at an angle to the axis of the billet to produce a surface friction force in one direction to force the billet over a piercing mandrel. While being formed around the mandrel and before losing the desired shape, the tube thus formed is cooled by a water spray.

  12. Corrosion-resistant uranium

    DOEpatents

    Hovis, Jr., Victor M.; Pullen, William C.; Kollie, Thomas G.; Bell, Richard T.

    1983-01-01

    The present invention is directed to the protecting of uranium and uranium alloy articles from corrosion by providing the surfaces of the articles with a layer of an ion-plated metal selected from aluminum and zinc to a thickness of at least 60 microinches and then converting at least the outer surface of the ion-plated layer of aluminum or zinc to aluminum chromate or zinc chromate. This conversion of the aluminum or zinc to the chromate form considerably enhances the corrosion resistance of the ion plating so as to effectively protect the coated article from corrosion.

  13. TREATMENT OF URANIUM SURFACES

    DOEpatents

    Slunder, C.J.

    1959-02-01

    An improved process is presented for prcparation of uranium surfaces prior to electroplating. The surfacc of the uranium to be electroplated is anodized in a bath comprising a solution of approximately 20 to 602 by weight of phosphoric acid which contains about 20 cc per liter of concentrated hydrochloric acid. Anodization is carried out for approximately 20 minutes at a current density of about 0.5 amperes per square inch at a temperature of about 35 to 45 C. The oxidic film produced by anodization is removed by dipping in strong nitric acid, followed by rinsing with water just prior to electroplating.

  14. Recovery of Uranium Fragments

    NASA Astrophysics Data System (ADS)

    James, H. R.; McElrue, D. H.; Winter, R. E.

    2002-07-01

    We describe a theory for calculating the penetration of fragments into foam. Comparisons with regular projectiles show that the drag term is similar in value to the analogous term in aerodynamics. This, plus the simple model used to describe porosity, enables the theory to be used in predicting the levels of stress present when uranium fragments are arrested in foam catchers. Consequently the theory can be used to assist in the design of catchers which will not distort uranium fragments travelling at 1-3 km/s. The theory is tested against experiments using some current designs.

  15. Corrosion-resistant uranium

    DOEpatents

    Hovis, V.M. Jr.; Pullen, W.C.; Kollie, T.G.; Bell, R.T.

    1981-10-21

    The present invention is directed to the protecting of uranium and uranium alloy articles from corrosion by providing the surfaces of the articles with a layer of an ion-plated metal selected from aluminum and zinc to a thickness of at least 60 microinches and then converting at least the outer surface of the ion-plated layer of aluminum or zinc to aluminum chromate or zinc chromate. This conversion of the aluminum or zinc to the chromate form considerably enhances the corrosion resistance of the ion plating so as to effectively protect the coated article from corrosion.

  16. PREPARATION OF URANIUM TRIOXIDE

    DOEpatents

    Buckingham, J.S.

    1959-09-01

    The production of uranium trioxide from aqueous solutions of uranyl nitrate is discussed. The uranium trioxide is produced by adding sulfur or a sulfur-containing compound, such as thiourea, sulfamic acid, sulfuric acid, and ammonium sulfate, to the uranyl solution in an amount of about 0.5% by weight of the uranyl nitrate hexahydrate, evaporating the solution to dryness, and calcining the dry residue. The trioxide obtained by this method furnished a dioxide with a considerably higher reactivity with hydrogen fluoride than a trioxide prepared without the sulfur additive.

  17. Germylmercury complex of uranium

    SciTech Connect

    Bochkarev, M.N.; Bochkarev, L.N.; Kalinina, G.S.; Razuvaev, G.A.; Sevast'yanov, V.G.

    1983-09-01

    The authors have established that metallic uranium reacts with ((C/sub 6/F/sub 5/)/sub 3/Ge)/sub 3/Hg at about 20/sup 0/C in a medium of 1,2-dimethoxyethane (DME). The reaction was complete after 3 h by the separation of metallic mercury (100 %) and by the formation of the heptakis (tris(pentafluoro-phenyl)germyl) dimercurate of uranium (((C/sub 6/F/sub 5/)/sub 3/Ge)/sub 7/Hg/sub 2/)U3DME (i), 81%. 1 reference.

  18. METHOD OF ELECTROPOLISHING URANIUM

    DOEpatents

    Walker, D.E.; Noland, R.A.

    1959-07-14

    A method of electropolishing the surface of uranium articles is presented. The process of this invention is carried out by immersing the uranium anticle into an electrolyte which contains from 35 to 65% by volume sulfuric acid, 1 to 20% by volume glycerine and 25 to 50% by volume of water. The article is made the anode in the cell and polished by electrolyzing at a voltage of from 10 to 15 volts. Discontinuing the electrolysis by intermittently withdrawing the anode from the electrolyte and removing any polarized film formed therein results in an especially bright surface.

  19. Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces

    NASA Astrophysics Data System (ADS)

    Ye, Ning; Feser, Joseph P.; Sadasivam, Sridhar; Fisher, Timothy S.; Wang, Tianshi; Ni, Chaoying; Janotti, Anderson

    2017-02-01

    Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi2, CoSi2, NiSi, and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no dependence of interface conductance on the detailed structure of the interface. In particular, there is no difference in the thermal interface conductance between epitaxial and nonepitaxial silicide/silicon interfaces, nor between epitaxial interfaces with different interface orientations. While these silicide-based interfaces yield the highest reported interface conductances of any known interface with silicon, none of the interfaces studied are found to operate close to the phonon radiation limit, indicating that phonon transmission coefficients are nonunity in all cases and yet remain insensitive to interfacial structure. In the case of CoSi2, a comparison is made with detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain, and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. Above 100 K, the AGF approach significantly underpredicts interface conductance suggesting that energy transport does not occur purely by coherent transmission of phonons, even for epitaxial interfaces. The full-dispersion DMM closely predicts the experimentally observed interface conductances for CoSi2, NiSi, and TiSi2 interfaces, while it remains an open question whether inelastic scattering, cross-interfacial electron-phonon coupling, or other mechanisms could also account for

  20. RECOVERY OF URANIUM FROM PITCHBLENDE

    DOEpatents

    Ruehle, A.E.

    1958-06-24

    The decontamination of uranium from molybdenum is described. When acid solutions containing uranyl nitrate are contacted with ether for the purpose of extracting the uranium values, complex molybdenum compounds are coextracted with the uranium and also again back-extracted from the ether with the uranium. This invention provides a process for extracting uranium in which coextraction of molybdenum is avoided. It has been found that polyhydric alcohols form complexes with molybdenum which are preferentially water-soluble are taken up by the ether extractant to only a very minor degree. The preferred embodiment of the process uses mannitol, sorbitol or a mixture of the two as the complexing agent.