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Sample records for atomized uranium silicide

  1. Status of the atomized uranium silicide fuel development at KAERI

    SciTech Connect

    Kim, C.K.; Kim, K.H.; Park, H.D.; Kuk, I.H.

    1997-08-01

    While developing KMRR fuel fabrication technology an atomizing technique has been applied in order to eliminate the difficulties relating to the tough property of U{sub 3}Si and to take advantage of the rapid solidification effect of atomization. The comparison between the conventionally comminuted powder dispersion fuel and the atomized powder dispersion fuel has been made. As the result, the processes, uranium silicide powdering and heat treatment for U{sub 3}Si transformation, become simplified. The workability, the thermal conductivity and the thermal compatibility of fuel meat have been investigated and found to be improved due to the spherical shape of atomized powder. In this presentation the overall developments of atomized U{sub 3}Si dispersion fuel and the planned activities for applying the atomizing technique to the real fuel fabrication are described.

  2. Production of Mo-99 using low-enriched uranium silicide

    SciTech Connect

    Hutter, J. C.; Srinivasan, B.; Vicek, M.; Vandegrift, G. F.

    1994-09-01

    Over the last several years, uranium silicide fuels have been under development as low-enriched uranium (LEU) targets for Mo-99. The use of LEU silicide is aimed at replacing the UAl{sub x} alloy in the highly-enriched uranium dissolution process. A process to recover Mo-99 from low-enriched uranium silicide is being developed at Argonne National Laboratory. The uranium silicide is dissolved in alkaline hydrogen peroxide. Experiments performed to determine the optimum dissolution procedure are discussed, and the results of dissolving a portion of a high-burnup (>40%) U{sub 3}Si{sub 2} miniplate are presented. Future work related to Mo-99 separation and waste disposal are also discussed.

  3. Preliminary investigations on the use of uranium silicide targets for fission Mo-99 production

    SciTech Connect

    Cols, H.; Cristini, P.; Marques, R.

    1997-08-01

    The National Atomic Energy Commission (CNEA) of Argentine Republic owns and operates an installation for production of molybdenum-99 from fission products since 1985, and, since 1991, covers the whole national demand of this nuclide, carrying out a program of weekly productions, achieving an average activity of 13 terabecquerel per week. At present they are finishing an enlargement of the production plant that will allow an increase in the volume of production to about one hundred of terabecquerel. Irradiation targets are uranium/aluminium alloy with 90% enriched uranium with aluminium cladding. In view of international trends held at present for replacing high enrichment uranium (HEU) for enrichment values lower than 20 % (LEU), since 1990 the authors are in contact with the RERTR program, beginning with tests to adapt their separation process to new irradiation target conditions. Uranium silicide (U{sub 3}Si{sub 2}) was chosen as the testing material, because it has an uranium mass per volume unit, so that it allows to reduce enrichment to a value of 20%. CNEA has the technology for manufacturing miniplates of uranium silicide for their purposes. In this way, equivalent amounts of Molybdenum-99 could be obtained with no substantial changes in target parameters and irradiation conditions established for the current process with Al/U alloy. This paper shows results achieved on the use of this new target.

  4. Progress in alkaline peroxide dissolution of low-enriched uranium metal and silicide targets

    SciTech Connect

    Chen, L.; Dong, D.; Buchholz, B.A.; Vandegrift, G.F.; Wu, D.

    1996-12-31

    This paper reports recent progress on two alkaline peroxide dissolution processes: the dissolution of low-enriched uranium metal and silicide (U{sub 3}Si{sub 2}) targets. These processes are being developed to substitute low-enriched for high-enriched uranium in targets used for production of fission-product {sup 99}Mo. Issues that are addressed include (1) dissolution kinetics of silicide targets, (2) {sup 99}Mo lost during aluminum dissolution, (3) modeling of hydrogen peroxide consumption, (4) optimization of the uranium foil dissolution process, and (5) selection of uranium foil barrier materials. Future work associated with these two processes is also briefly discussed.

  5. Atomic size effects studied by transport in single silicide nanowires

    NASA Astrophysics Data System (ADS)

    Miccoli, I.; Edler, F.; Pfnür, H.; Appelfeller, S.; Dähne, M.; Holtgrewe, K.; Sanna, S.; Schmidt, W. G.; Tegenkamp, C.

    2016-03-01

    Ultrathin metallic silicide nanowires with extremely high aspect ratios can be easily grown, e.g., by deposition of rare earth elements on semiconducting surfaces. These wires play a pivotal role in fundamental research and open intriguing perspectives for CMOS applications. However, the electronic properties of these one-dimensional systems are extremely sensitive to atomic-sized defects, which easily alter the transport characteristics. In this study, we characterized comprehensively TbSi2 wires grown on Si(100) and correlated details of the atomic structure with their electrical resistivities. Scanning tunneling microscopy (STM) as well as all transport experiments were performed in situ using a four-tip STM system. The measurements are complemented by local spectroscopy and density functional theory revealing that the silicide wires are electronically decoupled from the Si template. On the basis of a quasiclassical transport model, the size effect found for the resistivity is quantitatively explained in terms of bulk and surface transport channels considering details of atomic-scale roughness. Regarding future applications the full wealth of these robust nanostructures will emerge only if wires with truly atomically sharp interfaces can be reliably grown.

  6. Thermal Analysis of a Uranium Silicide Miniplate Irradiation Experiment

    SciTech Connect

    Donna Post Guillen

    2009-09-01

    This paper outlines the thermal analysis for the irradiation of high density uranium-silicide (U3Si2 dispersed in an aluminum matrix and clad in aluminum) booster fuel for a Boosted Fast Flux Loop designed to provide fast neutron flux test capability in the ATR. The purpose of this experiment (designated as Gas Test Loop-1 [GTL-1]) is two-fold: (1) to assess the adequacy of the U3Si2/Al dispersion fuel and the aluminum alloy 6061 cladding, and (2) to verify stability of the fuel cladding boehmite pre-treatment at nominal power levels in the 430 to 615 W/cm2 (2.63 to 3.76 Btu/s•in2) range. The GTL-1 experiment relies on a difficult balance between achieving a high heat flux, yet keeping fuel centerline temperature below a specified maximum value throughout an entire operating cycle of the reactor. A detailed finite element model was constructed to calculate temperatures and heat flux levels and to reveal which experiment parameters place constraints on reactor operations. Analyses were performed to determine the bounding lobe power level at which the experiment could be safely irradiated, yet still provide meaningful data under nominal operating conditions. Then, simulations were conducted for nominal and bounding lobe power levels under steady-state and transient conditions with the experiment in the reactor. Reactivity changes due to a loss of commercial power with pump coast-down to emergency flow or a standard in-pile tube pump discharge break were evaluated. The time after shutdown for which the experiment can be adequately cooled by natural convection cooling was determined using a system thermal hydraulic model. An analysis was performed to establish the required in-reactor cooling time prior to removal of the experiment from the reactor. The inclusion of machining tolerances in the numerical model has a large effect on heat transfer.

  7. Neutron irradiated uranium silicides studied by neutron diffraction and Rietveld analysis

    SciTech Connect

    Birtcher, R.C.; Mueller, M.H.; Richardson, J.W. Jr.

    1990-11-01

    The irradiation behavior of high-density uranium silicides has been a matter of interest to the nuclear industry for use in high power or low enrichment applications. Transmission electron microscopy studies have found that heavy ion bombardment renders U{sub 3}Si and U{sub 3}Si{sub 2} amorphous at temperatures below about 250 C and that U{sub 3}Si becomes mechanically unstable suffering rapid growth by plastic flow. In this present work, crystallographic changes preceding amorphization by fission fragment damage have been studied by high-resolution neutron diffraction as a function of damage produced by uranium fission at room temperature. Initially, both silicides had tetragonal crystal structures. Crystallographic and amorphous phases were studied simultaneously by combining conventional Rietveld refinement of the crystallographic phases with Fourier-filtering analysis of the non-crystalline scattering component. 13 refs., 5 figs.

  8. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    NASA Astrophysics Data System (ADS)

    Harp, Jason M.; Lessing, Paul A.; Hoggan, Rita E.

    2015-11-01

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ± 0.06 g/cm3. Additional characterization of the pellets by scanning electron microscopy and X-ray diffraction has also been performed. Pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.

  9. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    SciTech Connect

    Harp, Jason Michael; Lessing, Paul Alan; Hoggan, Rita Elaine

    2015-06-21

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.

  10. Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

    DOE PAGES

    Harp, Jason Michael; Lessing, Paul Alan; Hoggan, Rita Elaine

    2015-06-21

    In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U3Si2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U3Si2 has been optimized and high phase purity U3Si2 has been successfully produced. Results are presented from sintering studies and microstructural examinationsmore » that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.« less

  11. Calculating Atomic Number Densities for Uranium

    1993-01-01

    Provides method to calculate atomic number densities of selected uranium compounds and hydrogenous moderators for use in nuclear criticality safety analyses at gaseous diffusion uranium enrichment facilities.

  12. Fuel loading and homogeneity analysis of HFIR design fuel plates loaded with uranium silicide fuel

    SciTech Connect

    Blumenfeld, P.E.

    1995-08-01

    Twelve nuclear reactor fuel plates were analyzed for fuel loading and fuel loading homogeneity by measuring the attenuation of a collimated X-ray beam as it passed through the plates. The plates were identical to those used by the High Flux Isotope Reactor (HFIR) but were loaded with uranium silicide rather than with HFIR`s uranium oxide fuel. Systematic deviations from nominal fuel loading were observed as higher loading near the center of the plates and underloading near the radial edges. These deviations were within those allowed by HFIR specifications. The report begins with a brief background on the thermal-hydraulic uncertainty analysis for the Advanced Neutron Source (ANS) Reactor that motivated a statistical description of fuel loading and homogeneity. The body of the report addresses the homogeneity measurement techniques employed, the numerical correction required to account for a difference in fuel types, and the statistical analysis of the resulting data. This statistical analysis pertains to local variation in fuel loading, as well as to ``hot segment`` analysis of narrow axial regions along the plate and ``hot streak`` analysis, the cumulative effect of hot segment loading variation. The data for all twelve plates were compiled and divided into 20 regions for analysis, with each region represented by a mean and a standard deviation to report percent deviation from nominal fuel loading. The central regions of the plates showed mean values of about +3% deviation, while the edge regions showed mean values of about {minus}7% deviation. The data within these regions roughly approximated random samplings from normal distributions, although the chi-square ({chi}{sup 2}) test for goodness of fit to normal distributions was not satisfied.

  13. Method for producing uranium atomic beam source

    DOEpatents

    Krikorian, Oscar H.

    1976-06-15

    A method for producing a beam of neutral uranium atoms is obtained by vaporizing uranium from a compound UM.sub.x heated to produce U vapor from an M boat or from some other suitable refractory container such as a tungsten boat, where M is a metal whose vapor pressure is negligible compared to that of uranium at the vaporization temperature. The compound, for example, may be the uranium-rhenium compound, URe.sub.2. An evaporation rate in excess of about 10 times that of conventional uranium beam sources is produced.

  14. Safety evaluation report related to the evaluation of low-enriched uranium silicide-aluminum dispersion fuel for use in non-power reactors

    SciTech Connect

    Not Available

    1988-07-01

    Low-enriched uranium silicide-aluminum dispersion plate-type fuels have been extensively researched and developed under the international program, Reduced Enrichment in Research and Test Reactors. The international effort was led by Argonne National Laboratory (ANL) in the United States. This evaluation is based primarily on reports issued by ANL that discuss and summarize the developmental tests and experiments, including postirradiation examinations, of both miniature and full-sized plates of prototypical fuel compositions. This evaluation concludes that plate-type fuels suitable and acceptable for use in research and test reactors can be fabricated with U/sub 3/Si/sub 2/-Al dispersion compacts with uranium densities up to 4.8 g/cm/sup 3/. 4 refs., 1 fig.

  15. Interaction transfer of silicon atoms forming Co silicide for Co/√(3)×√(3)R30°-Ag/Si(111) and related magnetic properties

    SciTech Connect

    Chang, Cheng-Hsun-Tony; Fu, Tsu-Yi; Tsay, Jyh-Shen

    2015-05-07

    Combined scanning tunneling microscopy, Auger electron spectroscopy, and surface magneto-optic Kerr effect studies were employed to study the microscopic structures and magnetic properties for ultrathin Co/√(3)×√(3)R30°-Ag/Si(111). As the annealing temperature increases, the upward diffusion of Si atoms and formation of Co silicides occurs at temperature above 400 K. Below 600 K, the √(3)×√(3)R30°-Ag/Si(111) surface structure persists. We propose an interaction transferring mechanism of Si atoms across the √(3)×√(3)R30°-Ag layer. The upward transferred Si atoms react with Co atoms to form Co silicide. The step height across the edge of the island, a separation of 0.75 nm from the analysis of the 2 × 2 structure, and the calculations of the normalized Auger signal serve as strong evidences for the formation of CoSi{sub 2} at the interface. The interaction transferring mechanism for Si atoms enhances the possibility of interactions between Co and Si atoms. The smoothness of the surface is advantage for that the easy axis of magnetization for Co/√(3)×√(3)R30°-Ag/Si(111) is in the surface plane. This provides a possible way of growing flat magnetic layers on silicon substrate with controllable silicide formation and shows potential applications in spintronics devices.

  16. Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si(111) and Si(100)

    NASA Astrophysics Data System (ADS)

    Tedesco, J. L.; Rowe, J. E.; Nemanich, R. J.

    2009-04-01

    Cobalt silicide (CoSi2) islands have been formed by the deposition of thin films (˜0.1-0.3 nm) of cobalt on clean Si(111) and Si(100) substrates in ultrahigh vacuum (UHV) followed by annealing to ˜880 °C. Conducting atomic force microscopy has been performed on these islands to characterize and measure their current-voltage (I-V) characteristics. Current-voltage curves were analyzed using standard thermionic emission theory to obtain the Schottky barrier heights and ideality factors between the silicide islands and the silicon substrates. Current-voltage measurements were performed ex situ for one set of samples (termed "passivated surfaces") where the silicon surface surrounding the islands was passivated with a native oxide. Other samples (termed "clean surfaces") remained in UHV, while I-V curves were recorded. By comparing the barrier heights and ideality factors for islands on passivated surfaces and clean surfaces, the effects of the nonpassivated surfaces on conduction have been studied. The barrier heights measured from CoSi2 islands on clean surfaces are found to be ˜0.2-0.3 eV below barrier heights measured from similar islands on passivated surfaces. The main cause of the reduced Schottky barrier in the clean surface samples is attributed to Fermi level pinning by nonpassivated surface states of the clean silicon surface. However, the measured barrier heights of the islands are equivalent on both clean Si(111) and Si(100) surfaces, suggesting that the nonpassivated surface is influenced by cobalt impurities. Furthermore, the barrier heights of islands on the clean surfaces are lower than what can be explained by Fermi level pinning alone, suggesting the presence of additional reductions in the Schottky barrier heights. These variations are greater than what can be attributed to experimental error, and the additional barrier height lowering is primarily attributed to spreading resistance effects. Schottky barrier inhomogeneity is also identified as a

  17. An atomic model for neutral and singly ionized uranium

    NASA Technical Reports Server (NTRS)

    Maceda, E. L.; Miley, G. H.

    1979-01-01

    A model for the atomic levels above ground state in neutral, U(0), and singly ionized, U(+), uranium is described based on identified atomic transitions. Some 168 states in U(0) and 95 in U(+) are found. A total of 1581 atomic transitions are used to complete this process. Also discussed are the atomic inverse lifetimes and line widths for the radiative transitions as well as the electron collisional cross sections.

  18. Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters

    NASA Astrophysics Data System (ADS)

    Okada, Naoya; Uchida, Noriyuki; Kanayama, Toshihiko

    2015-03-01

    We investigated the electrical properties and derived the energy band structures of amorphous Si-rich W silicide (a-WSin) films and approximately 1-nm-thick crystalline WSin epitaxial films (e-WSin) on Si (100) substrates with composition n = 8-10, both composed of Sin clusters each of which encapsulates a W atom (WSin clusters). The effect of annealing in the temperature range of 300-500 °C was also investigated. The Hall measurements at room temperature revealed that a-WSin is a nearly intrinsic semiconductor, whereas e-WSin is an n-type semiconductor with electron mobility of ˜8 cm2/V s and high sheet electron density of ˜7 × 1012 cm-2. According to the temperature dependence of the electrical properties, a-WSin has a mobility gap of ˜0.1 eV and mid gap states in the region of 1019 cm-3 eV-1 in an optical gap of ˜0.6 eV with considerable band tail states; e-WSin has a donor level of ˜0.1 eV with sheet density in the region of 1012 cm-2 in a band gap of ˜0.3 eV. These semiconducting band structures are primarily attributed to the open band-gap properties of the constituting WSin cluster. In a-WSin, the random network of the clusters generates the band tail states, and the formation of Si dangling bonds results in the generation of mid gap states; in e-WSin, the original cluster structure is highly distorted to accommodate the Si lattice, resulting in the formation of intrinsic defects responsible for the donor level.

  19. Development of Insulated Conductive Probes with Platinum Silicide Tips for Atomic Force Microscopy in Cell Biology

    NASA Astrophysics Data System (ADS)

    Akiyama, Terunobu; Gullo, Maurizio R.; Rooij, Nicolaas F. de; Tonin, Andreas; Hidber, Hans-Rudolf; Frederix, Patrick L. T. M.; Engel, Andreas; Staufer, Urs

    2004-06-01

    A microfabrication process of a multifunctional probe is introduced for atomic force microscopy and various electrochemical measurements on biological samples in buffer solution. The silicon nitride probes have a spring constant lower than 0.1 N/m and a conductive tip, which is tightly insulated except at the apex. The conductive core of the tip consists of PtxSiy and shows a typical radius of curvature of 15 nm. A simultaneous measurement of topography and electrical current on graphite in air was demonstrated.

  20. Laser-excited fluorescence spectra of atomic uranium

    SciTech Connect

    Wang Songyue; Jin Changtai; Shen Mingtao; Wang Xiulan

    1987-05-01

    Using a dc-supply hollow-cathode lamp as a source of uranium vapor and a rhodamine 6G dye laser to excite the vapor optically, it was simple and convenient to detect fluorescence from uranium atoms at 753.393, 763.175, and 763.954 nm. We give a detailed discussion of how we eliminated the intense background emissions, which were principally due to the lamp.

  1. Quantum oscillations of nitrogen atoms in uranium nitride

    NASA Astrophysics Data System (ADS)

    Aczel, A. A.; Granroth, G. E.; MacDougall, G. J.; Buyers, W. J. L.; Abernathy, D. L.; Samolyuk, G. D.; Stocks, G. M.; Nagler, S. E.

    2012-10-01

    The vibrational excitations of crystalline solids corresponding to acoustic or optic one-phonon modes appear as sharp features in measurements such as neutron spectroscopy. In contrast, many-phonon excitations generally produce a complicated, weak and featureless response. Here we present time-of-flight neutron scattering measurements for the binary solid uranium nitride, showing well-defined, equally spaced, high-energy vibrational modes in addition to the usual phonons. The spectrum is that of a single atom, isotropic quantum harmonic oscillator and characterizes independent motions of light nitrogen atoms, each found in an octahedral cage of heavy uranium atoms. This is an unexpected and beautiful experimental realization of one of the fundamental, exactly solvable problems in quantum mechanics. There are also practical implications, as the oscillator modes must be accounted for in the design of generation IV nuclear reactors that plan to use uranium nitride as a fuel.

  2. Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters

    SciTech Connect

    Okada, Naoya; Uchida, Noriyuki; Kanayama, Toshihiko

    2015-03-07

    We investigated the electrical properties and derived the energy band structures of amorphous Si-rich W silicide (a-WSi{sub n}) films and approximately 1-nm-thick crystalline WSi{sub n} epitaxial films (e-WSi{sub n}) on Si (100) substrates with composition n = 8–10, both composed of Si{sub n} clusters each of which encapsulates a W atom (WSi{sub n} clusters). The effect of annealing in the temperature range of 300–500 °C was also investigated. The Hall measurements at room temperature revealed that a-WSi{sub n} is a nearly intrinsic semiconductor, whereas e-WSi{sub n} is an n-type semiconductor with electron mobility of ∼8 cm{sup 2}/V s and high sheet electron density of ∼7 × 10{sup 12 }cm{sup −2}. According to the temperature dependence of the electrical properties, a-WSi{sub n} has a mobility gap of ∼0.1 eV and mid gap states in the region of 10{sup 19 }cm{sup −3} eV{sup −1} in an optical gap of ∼0.6 eV with considerable band tail states; e-WSi{sub n} has a donor level of ∼0.1 eV with sheet density in the region of 10{sup 12 }cm{sup −2} in a band gap of ∼0.3 eV. These semiconducting band structures are primarily attributed to the open band-gap properties of the constituting WSi{sub n} cluster. In a-WSi{sub n}, the random network of the clusters generates the band tail states, and the formation of Si dangling bonds results in the generation of mid gap states; in e-WSi{sub n}, the original cluster structure is highly distorted to accommodate the Si lattice, resulting in the formation of intrinsic defects responsible for the donor level.

  3. Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation

    SciTech Connect

    Liu, Hailong; She, Guangwei; Mu, Lixuan; Shi, Wensheng

    2012-12-15

    Graphical abstract: Display Omitted Highlight: ► Nickel silicides nanowire arrays prepared by a simple in situ silicidation method. ► Phases of nickel silicides could be varied by tuning the reaction temperature. ► A growth model was proposed for the nickel silicides nanowires. ► Diffusion rates of Ni and Si play a critical role for the phase variation. -- Abstract: In this paper, we report an in situ silicidizing method to prepare nickel silicide nanowire arrays with varied structures and phases. The in situ reaction (silicidation) between Si and NiCl{sub 2} led to conversion of Si nanowires to nickel silicide nanowires. Structures and phases of the obtained nickel silicides could be varied by changing the reaction temperature. At a relatively lower temperature of 700 °C, the products are Si/NiSi core/shell nanowires or NiSi nanowires, depending on the concentration of NiCl{sub 2} solution. At a higher temperature (800 °C and 900 °C), other phases of the nickel silicides, including Ni{sub 2}Si, Ni{sub 31}Si{sub 12}, and NiSi{sub 2}, were obtained. It is proposed that the different diffusion rates of Ni and Si atoms at different temperatures played a critical role in the formation of nickel silicide nanowires with different phases.

  4. 76 FR 58049 - Atomic Safety and Licensing Board; Honeywell International, Inc.; Metropolis Works Uranium...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-19

    ... From the Federal Register Online via the Government Publishing Office NUCLEAR REGULATORY COMMISSION Atomic Safety and Licensing Board; Honeywell International, Inc.; Metropolis Works Uranium... assurance for its Metropolis Works uranium conversion facility in Metropolis, Illinois. \\1\\ LBP-11-19,...

  5. Uranium isotopes quantitatively determined by modified method of atomic absorption spectrophotometry

    NASA Technical Reports Server (NTRS)

    Lee, G. H.

    1967-01-01

    Hollow-cathode discharge tubes determine the quantities of uranium isotopes in a sample by using atomic absorption spectrophotometry. Dissociation of the uranium atoms allows a large number of ground state atoms to be produced, absorbing the incident radiation that is different for the two major isotopes.

  6. Si-rich W silicide films composed of W-atom-encapsulated Si clusters deposited using gas-phase reactions of WF6 with SiH4

    NASA Astrophysics Data System (ADS)

    Okada, Naoya; Uchida, Noriyuki; Kanayama, Toshihiko

    2016-02-01

    We formed Si-rich W silicide films composed of Sin clusters, each of which encapsulates a W atom (WSin clusters with 8 < n ≤ ˜ 12), by using a gas-phase reaction between WF6 and SiH4 in a hot-wall reactor. The hydrogenated WSinHx clusters with reduced F concentration were synthesized in a heated gas phase and subsequently deposited on a substrate heated to 350-420 °C, where they dehydrogenated and coalesced into the film. Under a gas pressure of SiH4 high enough for the WSinHx reactant to collide a sufficient number of times with SiH4 molecules before reaching the substrate, the resulting film was composed of WSin clusters with a uniform n, which was determined by the gas temperature. The formed films were amorphous semiconductors with an optical gap of ˜0.8-1.5 eV and an electrical mobility gap of ˜0.05-0.12 eV, both of which increased as n increased from 8 to 12. We attribute this dependence to the reduction of randomness in the Si network as n increased, which decreased the densities of band tail states and localized states.

  7. Diffusion - Reaction: The Oxidation of Silicides in Electronics and Elsewhere

    NASA Astrophysics Data System (ADS)

    D'Heurle, F. M.

    1995-11-01

    The present article is a review of the up-to-date state of knowledge about the oxidation of silicide in film and “bulk" forms. The oxidation of silicides is analyzed with due respect to thermodynamics but the emphasis is placed on the kinetics of the process. A distinction is made between what occurs with silicide thin films used as conductors in the electronic industry, where the silicides are always in presence of excess silicon, and in the oxidation of “bulk" silicide structural parts where this condition is not encountered. Use is made of a graphical approach that was originally used to illustrate the oxidation of Si itself. The kinetic analysis provides at least a qualitative explanation of the conditions that must be met in the electronic industry to maintain the integrity of silicide layers in oxidizing atmospheres, and of the conditions that cause the occurrence of the “pest" phenomenon in structural parts. Although attention is directed mostly to silicides, it is clear that the approach and the model used are valid for other refractory compounds, so that allusions are made also to aluminides and beryllides, etc. Marker experiments to probe the motion of atoms in the silicides during oxidation are analyzed. It is suggested that the relation between electron concentrations and oxidation rates is related to the decomposition of oxygen molecules.

  8. Energy dependence of the trapping of uranium atoms by aluminum oxide surfaces

    NASA Technical Reports Server (NTRS)

    Librecht, K. G.

    1979-01-01

    The energy dependence of the trapping probability for sputtered U-235 atoms striking an oxidized aluminum collector surface at energies between 1 eV and 184 eV was measured. At the lowest energies, approximately 10% of the uranium atoms are not trapped, while above 10 eV essentially all of them stick. Trapping probabilities averaged over the sputtered energy distribution for uranium incident on gold and mica are also presented.

  9. Determination of 235U/238U atom ratio in uranium samples using liquid scintillation counting (LSC).

    PubMed

    Alamelu, D; Aggarwal, S K

    2009-01-15

    A correlation has been developed for the determination of (235)U/(238)U atom ratio in uranium samples using liquid scintillation counting (LSC). The (235)U/(238)U atom ratio determined by thermal ionization mass spectrometry (TIMS) was correlated to the ratio of (i) alpha-count rate and (ii) Cerenkov count rate due to (234 m)Pa in the sample; both measured by LSC. This correlation is linear over the range of (235)U/(238)U atom ratio encountered in the nuclear fuel samples, i.e. the low enriched uranium (LEU) samples with (235)U<20 atom%. The methodology based on this correlation will be useful for the quick determination and verification of (235)U/(238)U atom ratios in fuel samples using cost effective technique of LSC. PMID:19064080

  10. Surface morphology of erbium silicide

    NASA Technical Reports Server (NTRS)

    Lau, S. S.; Pai, C. S.; Wu, C. S.; Kuech, T. F.; Liu, B. X.

    1982-01-01

    The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.

  11. Measurement of lanthanum and technetium in uranium fuels by inductively coupled plasma atomic emission spectroscopy.

    SciTech Connect

    Carney, K.; Crane, P.; Cummings, D.; Krsul, J.; McKnight, R.

    1999-06-10

    An important parameter in characterizing an irradiated nuclear fuel is determining the amount of uranium fissioned. By determining the amount of uranium fissioned in the fuel a burnup performance parameter can be calculated, and the amount of fission products left in the fuel can be predicted. The quantity of uranium fissioned can be calculated from the amount of lanthanum and technetium present in the fuel. Lanthanum and technetium were measured in irradiated fuel samples using an Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES) instrument and separation equipment located in a shielded glove-box. A discussion of the method, interferences, detection limits, quality control and a comparison to other work will be presented.

  12. Identification and quantification of iron silicide phases in thin films

    SciTech Connect

    Miquita, D. R.; Gonzalez, J. C.; Silva, M. I. N. da; Rodrigues, W. N.; Moreira, M. V. B.; Paniago, R.; Ribeiro-Andrade, R.; Magalhaes-Paniago, R.; Pfannes, H.-D.; Oliveira, A. G. de

    2008-09-15

    Iron silicide samples were grown on Si (111) substrates by solid phase epitaxy and reactive deposition epitaxy. The different iron silicide phases and their correlations with the growth parameters were analyzed by x-ray photoelectron spectroscopy, conversion electron Moessbauer spectroscopy, x-ray diffraction, atomic force microscopy, and magnetic force microscopy. The authors investigated the potential of each technique for identifying and quantifying of the phases. In particular, the authors used a semiquantitative analysis of magnetic force microscopy images to spatially resolve the semiconductor {beta}-FeSi{sub 2} phase.

  13. Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour

    PubMed Central

    Martin, T. L.; Coe, C.; Bagot, P. A. J.; Morrall, P.; Smith, G. D. W; Scott, T.; Moody, M. P.

    2016-01-01

    Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour. PMID:27403638

  14. Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour.

    PubMed

    Martin, T L; Coe, C; Bagot, P A J; Morrall, P; Smith, G D W; Scott, T; Moody, M P

    2016-01-01

    Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour. PMID:27403638

  15. Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour

    NASA Astrophysics Data System (ADS)

    Martin, T. L.; Coe, C.; Bagot, P. A. J.; Morrall, P.; Smith, G. D. W.; Scott, T.; Moody, M. P.

    2016-07-01

    Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour.

  16. Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

    SciTech Connect

    Lee, J.-G.; Nagase, T.; Yasuda, H.; Mori, H.

    2015-05-21

    The synthesis of metal silicide at the metal/silicon oxide interface by electronic excitation was investigated using transmission electron microscopy. A platinum silicide, α-Pt{sub 2}Si, was successfully formed at the platinum/silicon oxide interface under 25–200 keV electron irradiation. This is of interest since any platinum silicide was not formed at the platinum/silicon oxide interface by simple thermal annealing under no-electron-irradiation conditions. From the electron energy dependence of the cross section for the initiation of the silicide formation, it is clarified that the silicide formation under electron irradiation was not due to a knock-on atom-displacement process, but a process induced by electronic excitation. It is suggested that a mechanism related to the Knotek and Feibelman mechanism may play an important role in silicide formation within the solid. Similar silicide formation was also observed at the palladium/silicon oxide and nickel/silicon oxide interfaces, indicating a wide generality of the silicide formation by electronic excitation.

  17. Silicide surface phases on gold

    NASA Technical Reports Server (NTRS)

    Green, A. K.; Bauer, E.

    1981-01-01

    The crystalline silicide layers formed on (111) and (100) surfaces of Au films on various Si single-crystal substrates are studied by LEED and AES in conjunction with sputter-depth profiling as a function of annealing temperature. On the (111) surface, three basic silicide structures are obtained corresponding to layers of various thicknesses as obtained by different preparation conditions. The (100) surface shows only two different structures. None of the structures is compatible with the various bulk silicide structures deduced from X-ray diffraction. Using LEED as a criterion for the presence or absence of silicide on the surface, smaller layer thicknesses are obtained than reported previously on the basis of AES studies.

  18. High temperature structural silicides

    SciTech Connect

    Petrovic, J.J.

    1997-03-01

    Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi{sub 2}-based materials, which are borderline ceramic-intermetallic compounds. MoSi{sub 2} single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi{sub 2} possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi{sub 2}-Si{sub 3}N{sub 4} composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi{sub 2}-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing.

  19. Silicide Nanowires for Low-Resistance CMOS Transistor Contacts.

    NASA Astrophysics Data System (ADS)

    Zollner, Stefan

    2007-03-01

    Transition metal (TM) silicide nanowires are used as contacts for modern CMOS transistors. (Our smallest wires are ˜20 nm thick and ˜50 nm wide.) While much research on thick TM silicides was conducted long ago, materials perform differently at the nanoscale. For example, the usual phase transformation sequences (e.g., Ni, Ni2Si, NiSi, NiSi2) for the reaction of thick metal films on Si no longer apply to nanostructures, because the surface and interface energies compete with the bulk energy of a given crystal structure. Therefore, a NiSi film will agglomerate into hemispherical droplets of NiSi by annealing before it reaches the lowest-energy (NiSi2) crystalline structure. These dynamics can be tuned by addition of impurities (such as Pt in Ni). The Si surface preparation is also a more important factor for nanowires than for silicidation of thick TM films. Ni nanowires formed on Si surfaces that were cleaned and amorphized by sputtering with Ar ions have a tendency to form NiSi2 pyramids (``spikes'') even at moderate temperatures (˜400^oC), while similar Ni films formed on atomically clean or hydrogen-terminated Si form uniform NiSi nanowires. Another issue affecting TM silicides is the barrier height between the silicide contact and the silicon transistor. For most TM silicides, the Fermi level of the silicide is aligned with the center of the Si band gap. Therefore, silicide contacts experience Schottky barrier heights of around 0.5 eV for both n-type and p-type Si. The resulting contact resistance becomes a significant term for the overall resistance of modern CMOS transistors. Lowering this contact resistance is an important goal in CMOS research. New materials are under investigation (for example PtSi, which has a barrier height of only 0.3 eV to p-type Si). This talk will describe recent results, with special emphasis on characterization techniques and electrical testing useful for the development of silicide nanowires for CMOS contacts. In collaboration

  20. Reduction of uranium hexafluoride to tetrafluoride by using the hydrogen atoms

    NASA Astrophysics Data System (ADS)

    Aleksandrov, B. P.; Gordon, E. B.; Ivanov, A. V.; Kotov, A. A.; Smirnov, V. E.

    2016-09-01

    We consider the reduction of UF6 to UF4 by chemical reaction with hydrogen atoms originated in the powerful chemical generator. The principal design of such a chemical convertor is described. The results of the mathematical modeling of the thermodynamics and kinetics of the UF6 to UF4 reduction process are analyzed. The few options for the hydrogen atom generator design are proposed. A layout of the experimental setup with the chemical reactor is presented. The high efficiency together with the ability of the process scaling without loss of its efficiency makes this approach to the uranium hexafluoride depletion into tetrafluoride promising for its application in the industry.

  1. Dual fuel gradients in uranium silicide plates

    SciTech Connect

    Pace, B.W.

    1997-08-01

    Babcock & Wilcox has been able to achieve dual gradient plates with good repeatability in small lots of U{sub 3}Si{sub 2} plates. Improvements in homogeneity and other processing parameters and techniques have allowed the development of contoured fuel within the cladding. The most difficult obstacles to overcome have been the ability to evaluate the bidirectional fuel loadings in comparison to the perfect loading model and the different methods of instilling the gradients in the early compact stage. The overriding conclusion is that to control the contour of the fuel, a known relationship between the compact, the frames and final core gradient must exist. Therefore, further development in the creation and control of dual gradients in fuel plates will involve arriving at a plausible gradient requirement and building the correct model between the compact configuration and the final contoured loading requirements.

  2. Monocrystalline molybdenum silicide based quantum dot superlattices grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Savelli, Guillaume; Silveira Stein, Sergio; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent

    2016-09-01

    This paper presents the growth of doped monocrystalline molybdenum-silicide-based quantum dot superlattices (QDSL). This is the first time that such nanostructured materials integrating molybdenum silicide nanodots have been grown. QDSL are grown by reduced pressure chemical vapor deposition (RPCVD). We present here their crystallographic structures and chemical properties, as well as the influence of the nanostructuration on their thermal and electrical properties. Particularly, it will be shown some specific characteristics for these QDSL, such as a localization of nanodots between the layers, unlike other silicide based QDSL, an accumulation of doping atoms near the nanodots, and a strong decrease of the thermal conductivity obtained thanks to the nanostructuration.

  3. Uranium Recovery from Seawater: Development of Fiber Adsorbents Prepared via Atom-Transfer Radical Polymerization

    SciTech Connect

    Saito, Tomonori; Brown, Suree; Chatterjee, Sabornie; Kim, Jungseung; Tsouris, Costas; Mayes, Richard T; Kuo, Li-Jung; Gill, Gary; Oyola, Yatsandra; Janke, Christopher James; Dai, Sheng

    2014-01-01

    A novel adsorbent preparation method using atom-transfer radical polymerization (ATRP) combined with radiation-induced graft polymerization (RIGP) was developed to synthesize an adsorbent for uranium recovery from seawater. The ATRP method allowed a much higher degree of grafting on the adsorbent fibers (595 2818%) than that allowed by RIGP alone. The adsorbents were prepared with varied composition of amidoxime groups and hydrophilic acrylate groups. The successful preparation revealed that both ligand density and hydrophilicity were critical for optimal performance of the adsorbents. Adsorbents synthesized in this study showed a relatively high performance (141 179 mg/g at 49 62 % adsorption) in laboratory screening tests using a uranium concentration of ~6 ppm. This performance is much higher than that of known commercial adsorbents. However, actual seawater experiment showed impeded performance compared to the recently reported high-surface-area-fiber adsorbents, due to slow adsorption kinetics. The impeded performance motivated an investigation of the effect of hydrophilic block addition on the graft chain terminus. The addition of hydrophilic block on the graft chain terminus nearly doubled the uranium adsorption capacity in seawater, from 1.56 mg/g to 3.02 mg/g. The investigation revealed the importance of polymer chain conformation, in addition to ligand and hydrophilic group ratio, for advanced adsorbent synthesis for uranium recovery from seawater.

  4. Summary history of domestic uranium procurement under US Atomic Energy Commission contracts. Final report

    SciTech Connect

    Albrethsen, H. Jr.; McGinley, F.E.

    1982-09-01

    During the period 1947 through 1970, the Atomic Energy Commission (AEC) fostered the rapid development and expansion of the domestic uranium mining and milling industry by providing a market for uranium. Some thirty-two mills were constructed during that period to produce U/sub 3/O/sub 8/ concentrates for sale to the AEC. In addition, there were various pilot plants, concentrators, upgraders, heap leach, and solution mining facilities that operated during the period. The purpose of this report is to compile a short narrative history of the AEC's uranium concentrate procurement program and to describe briefly each of the operations that produced uranium for sale to the AEC. Contractual arrangements are described and data are given on quantities of U/sub 3/O/sub 8/ purchased and prices paid. Similar data are included for V/sub 2/O/sub 5/, where applicable. Mill and other plant operating data were also compiled from old AEC records. These latter data were provided by the companies, as a contractual requirement, during the period of operation under AEC contracts. Additionally, an effort was made to determine the present status of each facility by reference to other recently published reports. No sites were visited nor were the individual reports reviewed by the companies, many of which no longer exist. The authors relied almost entirely on published information for descriptions of facilities and milling processes utilized.

  5. Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

    PubMed Central

    2011-01-01

    We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field. PMID:21968083

  6. 78 FR 56944 - Strata Energy, Inc. (Ross In Situ Recovery Uranium Project); Notice of Atomic Safety and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-16

    ... From the Federal Register Online via the Government Publishing Office NUCLEAR REGULATORY COMMISSION Strata Energy, Inc. (Ross In Situ Recovery Uranium Project); Notice of Atomic Safety and Licensing Board Reconstitution Pursuant to 10 CFR 2.313(c) and 2.321(b), the Atomic Safety and Licensing...

  7. Magnesium silicide intermetallic alloys

    NASA Astrophysics Data System (ADS)

    Li, Gh.; Gill, H. S.; Varin, R. A.

    1993-11-01

    Methods of induction melting an ultra-low-density magnesium silicide (Mg2Si) intermetallic and its alloys and the resulting microstructure and microhardness were studied. The highest quality ingots of Mg2Si alloys were obtained by triple melting in a graphite crucible coated with boron nitride to eliminate reactivity, under overpressure of high-purity argon (1.3 X 105 Pa), at a temperature close to but not exceeding 1105 °C ± 5 °C to avoid excessive evaporation of Mg. After establishing the proper induction-melting conditions, the Mg-Si binary alloys and several Mg2Si alloys macroalloyed with 1 at. pct of Al, Ni, Co, Cu, Ag, Zn, Mn, Cr, and Fe were induction melted and, after solidification, investigated by optical microscopy and quantitative X-ray energy dispersive spectroscopy (EDS). Both the Mg-rich and Si-rich eutectic in the binary alloys exhibited a small but systematic increase in the Si content as the overall composition of the binary alloy moved closer toward the Mg2Si line compound. The Vickers microhardness (VHN) of the as-solidified Mg-rich and Si-rich eutectics in the Mg-Si binary alloys decreased with increasing Mg (decreasing Si) content in the eutectic. This behavior persisted even after annealing for 75 hours at 0.89 pct of the respective eutectic temperature. The Mg-rich eutectic in the Mg2Si + Al, Ni, Co, Cu, Ag, and Zn alloys contained sections exhibiting a different optical contrast and chemical composition than the rest of the eutectic. Some particles dispersed in the Mg2Si matrix were found in the Mg2Si + Cr, Mn, and Fe alloys. The EDS results are presented and discussed and compared with the VHN data.

  8. Process for producing enriched uranium having a {sup 235}U content of at least 4 wt. % via combination of a gaseous diffusion process and an atomic vapor laser isotope separation process to eliminate uranium hexafluoride tails storage

    DOEpatents

    Horton, J.A.; Hayden, H.W. Jr.

    1995-05-30

    An uranium enrichment process capable of producing an enriched uranium, having a {sup 235}U content greater than about 4 wt. %, is disclosed which will consume less energy and produce metallic uranium tails having a lower {sup 235}U content than the tails normally produced in a gaseous diffusion separation process and, therefore, eliminate UF{sub 6} tails storage and sharply reduce fluorine use. The uranium enrichment process comprises feeding metallic uranium into an atomic vapor laser isotope separation process to produce an enriched metallic uranium isotopic mixture having a {sup 235} U content of at least about 2 wt. % and a metallic uranium residue containing from about 0.1 wt. % to about 0.2 wt. % {sup 235} U; fluorinating this enriched metallic uranium isotopic mixture to form UF{sub 6}; processing the resultant isotopic mixture of UF{sub 6} in a gaseous diffusion process to produce a final enriched uranium product having a {sup 235}U content of at least 4 wt. %, and up to 93.5 wt. % or higher, of the total uranium content of the product, and a low {sup 235}U content UF{sub 6} having a {sup 235}U content of about 0.71 wt. % of the total uranium content of the low {sup 235}U content UF{sub 6}; and converting this low {sup 235}U content UF{sub 6} to metallic uranium for recycle to the atomic vapor laser isotope separation process. 4 figs.

  9. Process for producing enriched uranium having a .sup.235 U content of at least 4 wt. % via combination of a gaseous diffusion process and an atomic vapor laser isotope separation process to eliminate uranium hexafluoride tails storage

    DOEpatents

    Horton, James A.; Hayden, Jr., Howard W.

    1995-01-01

    An uranium enrichment process capable of producing an enriched uranium, having a .sup.235 U content greater than about 4 wt. %, is disclosed which will consume less energy and produce metallic uranium tails having a lower .sup.235 U content than the tails normally produced in a gaseous diffusion separation process and, therefore, eliminate UF.sub.6 tails storage and sharply reduce fluorine use. The uranium enrichment process comprises feeding metallic uranium into an atomic vapor laser isotope separation process to produce an enriched metallic uranium isotopic mixture having a .sup.235 U content of at least about 2 wt. % and a metallic uranium residue containing from about 0.1 wt. % to about 0.2 wt. % .sup.235 U; fluorinating this enriched metallic uranium isotopic mixture to form UF.sub.6 ; processing the resultant isotopic mixture of UF.sub.6 in a gaseous diffusion process to produce a final enriched uranium product having a .sup.235 U content of at least 4 wt. %, and up to 93.5 wt. % or higher, of the total uranium content of the product, and a low .sup.235 U content UF.sub.6 having a .sup.235 U content of about 0.71 wt. % of the total uranium content of the low .sup.235 U content UF.sub.6 ; and converting this low .sup.235 U content UF.sub.6 to metallic uranium for recycle to the atomic vapor laser isotope separation process.

  10. Optical properties of beta-iron silicide, ruthenium silicide and osmium silicide: Semiconducting transition metal silicides

    NASA Astrophysics Data System (ADS)

    Birdwell, Anthony Glen

    2001-09-01

    Various optical techniques were used to study the semiconducting transition metal silicides of β- FeSi2, Ru2Si3, and OsSi2. The Raman spectra of ion beam synthesized (IBS) β-FeSi 2 were shown to provide evidence of a net tensile stress in these IBS materials. Possible origins of the observed stress were suggested and a simple model was proposed in order to calculate a value of the observed stress. A correlation between the tensile stress, the nature of the band gap, and the resulting light emitting properties of IBS β-FeSi2 was suggested. The photoreflectance (PR) spectra of IBS β- FeSi2 reveals a direct gap at 0.815 eV and were shown to agree with the band gap value obtained by photoluminescence (PL) once the adjustments for the temperature difference and trap related recombination effects were made. This provides very convincing evidence for intrinsic light emission from IBS β- FeSi2. Furthermore, a model was developed that helps to clarify the variety of inconsistent results obtained by optical absorption measurements. When the results of PL and PR were inserted into this model, a good agreement was obtained with our measured optical absorption results. We also obtained PR spectra of β-FeSi 2 thin films grown by molecular beam epitaxy. These spectra reveal the multiple direct transitions near the fundamental absorption edge of β-FeSi 2 that were predicted by theory. We suggest an order of these critical point transitions following the trends reported in the theoretical investigations. Doping these β-FeSi2 thin films with small amounts of chromium was shown to have a measurable effect on the interband optical spectra. We also report on the effects of alloying β- FeSi2 with cobalt. A decrease in the critical point transitions nearest the fundamental absorption edge was observed as the cobalt concentration increased. Finally, Raman spectroscopy was used to study the vibrational properties of β-FeSi2. The measured Raman spectra agreed very well with the

  11. Uranium Isotopic Ratio Measurements of U3O8 Reference Materials by Atom Probe Tomography

    SciTech Connect

    Fahey, Albert J.; Perea, Daniel E.; Bartrand, Jonah AG; Arey, Bruce W.; Thevuthasan, Suntharampillai

    2016-01-01

    We report results of measurements of isotopic ratios obtained with atom probe tomography on U3O8 reference materials certified for their isotopic abundances of uranium. The results show good agreement with the certified values. High backgrounds due to tails from adjacent peaks complicate the measurement of the integrated peak areas as well as the fact that only oxides of uranium appear in the spectrum, the most intense of which is doubly charged. In addition, lack of knowledge of other instrumental parameters, such as the dead time, may bias the results. Isotopic ratio measurements can be performed at the nanometer-scale with the expectation of sensible results. The abundance sensitivity and mass resolving power of the mass spectrometer are not sufficient to compete with magnetic-sector instruments but are not far from measurements made by ToF-SIMS of other isotopic systems. The agreement of the major isotope ratios is more than sufficient to distinguish most anthropogenic compositions from natural.

  12. Uranium isotopic ratio measurements of U3O8 reference materials by atom probe tomography.

    PubMed

    Fahey, Albert J; Perea, Daniel E; Bartrand, Jonah; Arey, Bruce W; Thevuthasan, Suntharampillai

    2016-03-01

    We report results of measurements of isotopic ratios obtained with atom probe tomography on U3O8 reference materials certified for their isotopic abundances of uranium. The results show good agreement with the certified values. High backgrounds due to tails from adjacent peaks complicate the measurement of the integrated peak areas as well as the fact that only oxides of uranium appear in the spectrum, the most intense of which is doubly charged. In addition, lack of knowledge of other instrumental parameters, such as the dead time, may bias the results. Isotopic ratio measurements can be performed at the nanometer-scale with the expectation of sensible results. The abundance sensitivity and mass resolving power of the mass spectrometer are not sufficient to compete with magnetic-sector instruments but are not far from measurements made by ToF-SIMS of other isotopic systems. The agreement of the major isotope ratios is more than sufficient to distinguish most anthropogenic compositions from natural. PMID:26774651

  13. Multireference configuration interaction calculations of the first six ionization potentials of the uranium atom

    NASA Astrophysics Data System (ADS)

    Bross, David H.; Parmar, Payal; Peterson, Kirk A.

    2015-11-01

    The first 6 ionization potentials (IPs) of the uranium atom have been calculated using multireference configuration interaction (MRCI+Q) with extrapolations to the complete basis set limit using new all-electron correlation consistent basis sets. The latter was carried out with the third-order Douglas-Kroll-Hess Hamiltonian. Correlation down through the 5s5p5d electrons has been taken into account, as well as contributions to the IPs due to the Lamb shift. Spin-orbit coupling contributions calculated at the 4-component Kramers restricted configuration interaction level, as well as the Gaunt term computed at the Dirac-Hartree-Fock level, were added to the best scalar relativistic results. The final ionization potentials are expected to be accurate to at least 5 kcal/mol (0.2 eV) and thus more reliable than the current experimental values of IP3 through IP6.

  14. Multireference configuration interaction calculations of the first six ionization potentials of the uranium atom

    SciTech Connect

    Bross, David H.; Parmar, Payal; Peterson, Kirk A.

    2015-11-14

    The first 6 ionization potentials (IPs) of the uranium atom have been calculated using multireference configuration interaction (MRCI+Q) with extrapolations to the complete basis set limit using new all-electron correlation consistent basis sets. The latter was carried out with the third-order Douglas-Kroll-Hess Hamiltonian. Correlation down through the 5s5p5d electrons has been taken into account, as well as contributions to the IPs due to the Lamb shift. Spin-orbit coupling contributions calculated at the 4-component Kramers restricted configuration interaction level, as well as the Gaunt term computed at the Dirac-Hartree-Fock level, were added to the best scalar relativistic results. The final ionization potentials are expected to be accurate to at least 5 kcal/mol (0.2 eV) and thus more reliable than the current experimental values of IP{sub 3} through IP{sub 6}.

  15. Nucleation and growth of nanoscale metal silicides in nanowires of silicon

    NASA Astrophysics Data System (ADS)

    Chou, Yi-Chia

    Transition metal silicides have been used in the SALICIDE process to form gate and source/drain contacts in MOSFET devices. How to control silicide formation in shallow junction devices and the kinetics of single silicide phase formation between the Si and metal thin films have received extensive attention and study. As the trend of miniaturization of Si devices moves from 45 rim to smaller sizes, the formation of nanoscale metal silicides has attracted renewed interest. Nanostructures in Si nanowires have been studied for basic components in electronic and optoelectronics devices, especially for biosensors. Well-defined nanoscale building blocks such as ohmic contacts and gates on Si nanowires must be developed in order to be assembled into functional circuit components in future nanotechnology. It requires a systematic study of solid state chemical reactions in the nanoscale to form these circuit components. In the dissertation, the nucleation and growth of epitaxial silicides in Si nanowires has been discussed and the comparison of silicide formation in thin films and in nanowires has been made. The difference of silicide formation between the thin film case and the nanowire case, especially the kinetics of nucleation and growth, will be emphasized. In this dissertation, I focused on the nucleation and growth of Ni and Co silicides formation in Si nanowires and used in situ high resolution transmission electron microscopy (TEM) to investigate kinetics of the silicides formation. Heterostructures of silicide/Si/silicide, such as NiSi/Si/NiSi, NiSi2/Si/NiSi2, and CoSi2/Si/CoSi 2, have been produced with sharp interfaces. Periodic multi-heterostructures of NiSi/Si and NiSi2/Si have been synthesized by in-situ TEM. The NiSi, NiSi2, and CoSi2 were found to have epitaxial growth with Si and the growth can be decomposed into nucleation periods and growth periods instead of continues growth as thin film silicides formation on Si wafers. The silicides grow atomic layer

  16. Uranium Adsorbent Fibers Prepared by Atom-Transfer Radical Polymerization from Chlorinated Polypropylene and Polyethylene Trunk Fibers

    SciTech Connect

    Brown, Suree; Chatterjee, Sabornie; Li, Meijun; Yue, Yanfeng; Tsouris, Costas; Janke, Christopher J.; Saito, Tomonori; Dai, Sheng

    2015-12-10

    Seawater contains a large amount of uranium (~4.5 billion tons) which can serve as a limitless supply of an energy source. However, in order to make the recovery of uranium from seawater economically feasible, lower manufacturing and deployment costs are required, and thus, solid adsorbents must have high uranium uptake, reusability, and high selectivity toward uranium. In this study, atom-transfer radical polymerization (ATRP), without the radiation-induced graft polymerization (RIGP), was used for grafting acrylonitrile (AN) and tert-butyl acrylate (tBA) from a new class of trunk fibers, forming adsorbents in a readily deployable form. The new class of trunk fibers was prepared by the chlorination of PP round fiber, hollow-gear-shaped PP fiber, and hollow-gear-shaped PE fiber. During ATRP, degrees of grafting (d.g.) varied according to the structure of active chlorine sites on trunk fibers and ATRP conditions, and the d.g. as high as 2570% was obtained. Resulting adsorbent fibers were evaluated in U-spiked simulated seawater and the maximum adsorption capacity of 146.6 g U/kg, much higher than that of a standard adsorbent JAEA fiber (75.1 g/kg), was obtained. This new type of trunk fibers can be used for grafting a variety of uranium-interacting ligands, including designed ligands that are highly selective toward uranium.

  17. Uranium Adsorbent Fibers Prepared by Atom-Transfer Radical Polymerization from Chlorinated Polypropylene and Polyethylene Trunk Fibers

    DOE PAGES

    Brown, Suree; Chatterjee, Sabornie; Li, Meijun; Yue, Yanfeng; Tsouris, Costas; Janke, Christopher J.; Saito, Tomonori; Dai, Sheng

    2015-12-10

    Seawater contains a large amount of uranium (~4.5 billion tons) which can serve as a limitless supply of an energy source. However, in order to make the recovery of uranium from seawater economically feasible, lower manufacturing and deployment costs are required, and thus, solid adsorbents must have high uranium uptake, reusability, and high selectivity toward uranium. In this study, atom-transfer radical polymerization (ATRP), without the radiation-induced graft polymerization (RIGP), was used for grafting acrylonitrile (AN) and tert-butyl acrylate (tBA) from a new class of trunk fibers, forming adsorbents in a readily deployable form. The new class of trunk fibers wasmore » prepared by the chlorination of PP round fiber, hollow-gear-shaped PP fiber, and hollow-gear-shaped PE fiber. During ATRP, degrees of grafting (d.g.) varied according to the structure of active chlorine sites on trunk fibers and ATRP conditions, and the d.g. as high as 2570% was obtained. Resulting adsorbent fibers were evaluated in U-spiked simulated seawater and the maximum adsorption capacity of 146.6 g U/kg, much higher than that of a standard adsorbent JAEA fiber (75.1 g/kg), was obtained. This new type of trunk fibers can be used for grafting a variety of uranium-interacting ligands, including designed ligands that are highly selective toward uranium.« less

  18. Improved high-temperature silicide coatings

    NASA Technical Reports Server (NTRS)

    Klopp, W. D.; Stephens, J. R.; Stetson, A. R.; Wimber, R. T.

    1969-01-01

    Special technique for applying silicide coatings to refractory metal alloys improves their high-temperature protective capability. Refractory metal powders mixed with a baked-out organic binder and sintered in a vacuum produces a porous alloy layer on the surface. Exposing the layer to hot silicon converts it to a silicide.

  19. Silicidation of Niobium Deposited on Silicon by Physical Vapor Deposition

    SciTech Connect

    Coumba Ndoye, Kandabara Tapily, Marius Orlowski, Helmut Baumgart, Diefeng Gu

    2011-07-01

    Niobium was deposited by physical vapor deposition (PVD) using e-beam evaporation on bare (100) silicon substrates and SiO2 surfaces. The formation of niobium silicide was investigated by annealing PVD Nb films in the temperatures range 400–1000°C. At all elevated annealing temperatures the resistivity of Nb silicide is substantially higher than that of Nb. The Nb silicidation as a function of temperature has been investigated and different NbXSiy compounds have been characterized. It has been observed that the annealing of the Nb film on Si is accompanied by a strong volume expansion of about 2.5 of the resulting reacted film. The films' structural properties were studied using X-Ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM), which was not previously presented in the context of the extant NbSi literature. The X-Ray diffraction characterization of the Nb on Si sample annealed at 1000°C, showed the presence of hexagonal Nb5Si3 phases, with a dominant peak at the (200) plane, and NbSi2 phases. Fractal dimension calculations indicate a distinct transition from Stranski-Krastanov to Volmer-Weber film growth for NbSi formation at the annealing temperature of 600°C and above.

  20. Nanoscale contact engineering for Silicon/Silicide nanowire devices

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Chen

    Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at nanoscale have indicated possible deviations from the bulk and the thin film system. Here we studied growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. We have grown single crystal PtSi nanowires and PtSi/Si/PtSi nanowire heterostructures through solid state reaction. TEM studies show that the heterostructures have atomically sharp interfaces free of defects. Electrical measurement of PtSi nanowires shows a low resistivity of ˜28.6 μΩ·cm and a high breakdown current density beyond 108 A/cm2. Furthermore, using single-crystal PtSi/Si/PtSi nanowire heterostructures with atomically clean interfaces, we have fabricated p-channel enhancement mode transistors with the best reported performance for intrinsic silicon nanowires to date. In our results, silicide can provide a clean and no Fermi level pinning interface and then silicide can form Ohmic-contact behavior by replacing the source/drain metal with PtSi. It has been proven by our experiment by contacting PtSi with intrinsic Si nanowires (no extrinsic doping) to achieve high performance p-channel device. By utilizing the same approach, single crystal MnSi nanowires and MnSi/Si/MnSi nanowire heterojunction with atomically sharp interfaces can also been grown. Electrical transport studies on Mn

  1. Neutronic study on conversion of SAFARI-1 to LEU silicide fuel

    SciTech Connect

    Ball, G.; Pond, R.; Hanan, N.; Matos, J.

    1995-02-01

    This paper marks the initial study into the technical and economic feasibility of converting the SAFARI-1 reactor in South Africa to LEU silicide fuel. Several MTR assembly geometries and LEU uranium densities have been studied and compared with MEU and HEU fuels. Two factors of primary importance for conversion of SAFARI-1 to LEU fuel are the economy of the fuel cycle and the performance of the incore and excore irradiation positions.

  2. Multireference configuration interaction calculations of the first six ionization potentials of the uranium atom

    DOE PAGES

    Bross, David H.; Parmar, Payal; Peterson, Kirk A.

    2015-11-12

    The first 6 ionization potentials (IPs) of the uranium atom have been calculated using multireference configuration interaction (MRCI+Q) with extrapolations to the complete basis set (CBS) limit using new all-electron correlation consistent basis sets. The latter were carried out with the third-order Douglas-Kroll-Hess Hamiltonian. Correlation down through the 5s5p5d electrons have been taken into account, as well as contributions to the IPs due to the Lamb shift. Spin-orbit coupling contributions calculated at the 4-component Kramers restricted configuration interaction level, as well as the Gaunt term computed at the Dirac-Hartree-Fock level, were added to the best scalar relativistic results. As amore » result, the final ionization potentials are expected to be accurate to at least 5 kcal/mol (0.2 eV), and thus more reliable than the current experimental values of IP3 through IP6.« less

  3. Multireference configuration interaction calculations of the first six ionization potentials of the uranium atom

    SciTech Connect

    Bross, David H.; Parmar, Payal; Peterson, Kirk A.

    2015-11-12

    The first 6 ionization potentials (IPs) of the uranium atom have been calculated using multireference configuration interaction (MRCI+Q) with extrapolations to the complete basis set (CBS) limit using new all-electron correlation consistent basis sets. The latter were carried out with the third-order Douglas-Kroll-Hess Hamiltonian. Correlation down through the 5s5p5d electrons have been taken into account, as well as contributions to the IPs due to the Lamb shift. Spin-orbit coupling contributions calculated at the 4-component Kramers restricted configuration interaction level, as well as the Gaunt term computed at the Dirac-Hartree-Fock level, were added to the best scalar relativistic results. As a result, the final ionization potentials are expected to be accurate to at least 5 kcal/mol (0.2 eV), and thus more reliable than the current experimental values of IP3 through IP6.

  4. Synthesis and design of silicide intermetallic materials

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.; Park, Y.; Hollis, K.J.; Kung, H.H.

    1998-11-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries.

  5. Near-threshold photoionization of hydrogenlike uranium studied in ion-atom collisions via the time-reversed process.

    PubMed

    Stöhlker, T; Ma, X; Ludziejewski, T; Beyer, H F; Bosch, F; Brinzanescu, O; Dunford, R W; Eichler, J; Hagmann, S; Ichihara, A; Kozhuharov, C; Krämer, A; Liesen, D; Mokler, P H; Stachura, Z; Swiat, P; Warczak, A

    2001-02-01

    Radiative electron capture, the time-reversed photoionization process occurring in ion-atom collisions, provides presently the only access to photoionization studies for very highly charged ions. By applying the deceleration mode of the ESR storage ring, we studied this process in low-energy collisions of bare uranium ions with low- Z target atoms. This technique allows us to extend the current information about photoionization to much lower energies than those accessible for neutral heavy elements in the direct reaction channel. The results prove that for high- Z systems, higher-order multipole contributions and magnetic corrections persist even at energies close to the threshold.

  6. Near-threshold photoionization of hydrogenlike uranium studied in ion-atom collisions via the time-reversed process.

    PubMed

    Stöhlker, T; Ma, X; Ludziejewski, T; Beyer, H F; Bosch, F; Brinzanescu, O; Dunford, R W; Eichler, J; Hagmann, S; Ichihara, A; Kozhuharov, C; Krämer, A; Liesen, D; Mokler, P H; Stachura, Z; Swiat, P; Warczak, A

    2001-02-01

    Radiative electron capture, the time-reversed photoionization process occurring in ion-atom collisions, provides presently the only access to photoionization studies for very highly charged ions. By applying the deceleration mode of the ESR storage ring, we studied this process in low-energy collisions of bare uranium ions with low- Z target atoms. This technique allows us to extend the current information about photoionization to much lower energies than those accessible for neutral heavy elements in the direct reaction channel. The results prove that for high- Z systems, higher-order multipole contributions and magnetic corrections persist even at energies close to the threshold. PMID:11177990

  7. Method for forming metallic silicide films on silicon substrates by ion beam deposition

    DOEpatents

    Zuhr, Raymond A.; Holland, Orin W.

    1990-01-01

    Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

  8. Epitaxial insertion of gold silicide nanodisks during the growth of silicon nanowires.

    PubMed

    Um, Han-Don; Jee, Sang-Won; Park, Kwang-Tae; Jung, Jin-Young; Guo, Zhongyi; Lee, Jung-Ho

    2011-07-01

    Nanodisk-shaped, single-crystal gold silicide heterojunctions were inserted into silicon nanowires during vapor-liquid-solid growth using Au as a catalyst within a specific range of chlorine-to-hydrogen atomic ratio. The mechanism of nanodisk formation has been investigated by changing the source gas ratio of SiCl4 to H2. We report that an over-supply of silicon into the Au-Si liquid alloy leads to highly supersaturated solution and enhances the precipitation of Au in the silicon nanowires due to the formation of unstable phases within the liquid alloy. It is shown that the gold precipitates embedded in the silicon nanowires consisted of a metastable gold silicide. Interestingly, faceting of gold silicide was observed at the Au/Si interfaces, and silicon nanowires were epitaxially grown on the top of the nanodisk by vapor-liquid-solid growth. High resolution transmission electron microscopy confirmed that gold silicide nanodisks are epitaxially connected to the silicon nanowires in the direction of growth direction. These gold silicide nanodisks would be useful as nanosized electrical junctions for future applications in nanowire interconnections.

  9. A computational investigation of nickel (silicides) as potential contact layers for silicon photovoltaic cells.

    PubMed

    Butler, Keith T; Harding, John H

    2013-10-01

    Nickel has been proposed as a low-cost alternative to silver for contacting in high-performance solar cells. Nickel at a crystalline silicon surface can form a number of silicide phases, depending on fabrication conditions. Using density functional theory calculations we calculate the Schottky barrier height (SBH) at the different possible interfaces. Depending on the silicide phase, crystallographic orientation and doping the SBH at the interface with Si can range from 0.39 to 0.70 eV. These calculations demonstrate which of the nickel (silicide) phases have potential use as contacting materials for silicon based solar cells. Furthermore, we explain the origin of the SBH tuning effect of P dopant atoms as being due to a dipole formed at the interface, demonstrating the linear relationship between the charge transfer at the interface upon doping and the concomitant modulation of the SBH.

  10. Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

    SciTech Connect

    Das, Debolina; Mahato, J. C.; Bisi, Bhaskar; Dev, B. N.; Satpati, B.

    2014-11-10

    Iron silicide (cubic FeSi{sub 2}) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi{sub 2} nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along their edges.

  11. On the kinetics of platinum silicide formation

    NASA Astrophysics Data System (ADS)

    Faber, Erik J.; Wolters, Rob A. M.; Schmitz, Jurriaan

    2011-02-01

    In this work, the kinetics of platinum silicide formation for thin Pt films (50 nm) on monocrystalline ⟨100⟩ silicon is investigated via in situ resistance measurements under isothermal (197-275 °C) conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and √t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n =1.4±0.1. Additionally, an effective activation energy EA=1.7±0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts.

  12. Synthesis and Design of Silicide Intermetallic Materials

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Vaidya, R.U.; Park, Y.

    1999-05-14

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the US processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive US processing industries. The program presently has a number of industrial connections, including a CRADA with Johns Manville Corporation targeted at the area of MoSi{sub 2}-based high temperature materials for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. With the Exotherm Corporation, they are developing advanced silicide powders for the fabrication of silicide materials with tailored and improved properties for industrial applications. In October 1998, the authors initiated a new activity funded by DOE/OIT on ``Molybdenum Disilicide Composites for Glass Processing Sensors''. With Accutru International Corporation, they are developing silicide-based protective sheaths for self-verifying temperature sensors which may be used in glass furnaces and other industrial applications. With Combustion Technology Inc., they are developing silicide-based periscope sight tubes for the direct observation of glass melts.

  13. METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES

    DOEpatents

    Bowman, M.G.; Krikorian, N.H.

    1961-10-01

    A method is described for forming a non-corrosive silicide coating on tantalum. The coating is made through the heating of trirhenium silicides in contact with the tantalum object to approximately 1400 deg C at which temperature trirhenium silicide decomposes into rhenium and gaseous silicons. The silicon vapor reacts with the tantalum surface to form a tantalum silicide layer approximately 10 microns thick. (AEC)

  14. Near surface silicide formation after off-normal Fe-implantation of Si(001) surfaces

    SciTech Connect

    Khanbabaee, B. Pietsch, U.; Lützenkirchen-Hecht, D.; Hübner, R.; Grenzer, J.; Facsko, S.

    2014-07-14

    We report on formation of non-crystalline Fe-silicides of various stoichiometries below the amorphized surface of crystalline Si(001) after irradiation with 5 keV Fe{sup +} ions under off-normal incidence. We examined samples prepared with ion fluences of 0.1 × 10{sup 17} and 5 × 10{sup 17} ions cm{sup −2} exhibiting a flat and patterned surface morphology, respectively. Whereas the iron silicides are found across the whole surface of the flat sample, they are concentrated at the top of ridges at the rippled surface. A depth resolved analysis of the chemical states of Si and Fe atoms in the near surface region was performed by combining X-ray photoelectron spectroscopy and X-ray absorption spectroscopy (XAS) using synchrotron radiation. The chemical shift and the line shape of the Si 2p core levels and valence bands were measured and associated with the formation of silicide bonds of different stoichiometric composition changing from an Fe-rich silicides (Fe{sub 3}Si) close to the surface into a Si-rich silicide (FeSi{sub 2}) towards the inner interface to the Si(001) substrate. This finding is supported by XAS analysis at the Fe K-edge which shows changes of the chemical environment and the near order atomic coordination of the Fe atoms in the region close to surface. Because a similar Fe depth profile has been found for samples co-sputtered with Fe during Kr{sup +} ion irradiation, our results suggest the importance of chemically bonded Fe in the surface region for the process of ripple formation.

  15. Robust micromachining of compliant mechanisms using silicides

    NASA Astrophysics Data System (ADS)

    Khosraviani, Kourosh; Leung, Albert M.

    2013-01-01

    We introduce an innovative sacrificial surface micromachining process that enhances the mechanical robustness of freestanding microstructures and compliant mechanisms. This process facilitates the fabrication, and improves the assembly yield of the out-of-plane micro sensors and actuators. Fabrication of a compliant mechanism using conventional sacrificial surface micromachining results in a non-planar structure with a step between the structure and its anchor. During mechanism actuation or assembly, stress accumulation at the structure step can easily exceed the yield strength of the material and lead to the structure failure. Our process overcomes this topographic issue by virtually eliminating the step between the structure and its anchor, and achieves planarization without using chemical mechanical polishing. The process is based on low temperature and post-CMOS compatible nickel silicide technology. We use a layer of amorphous silicon (a-Si) as a sacrificial layer, which is locally converted to nickel silicide to form the anchors. High etch selectivity between silicon and nickel silicide in the xenon difluoride gas (sacrificial layer etchant) enables us to use the silicide to anchor the structures to the substrate. The formed silicide has the same thickness as the sacrificial layer; therefore, the structure is virtually flat. The maximum measured step between the anchor and the sacrificial layer is about 10 nm on a 300 nm thick sacrificial layer.

  16. Plutonium and Uranium Atom Ratios and Activity Levels in Cochiti Lake Bottom Sediments Provided by Pueblo de Cochiti

    SciTech Connect

    Gallaher, B.M.; Efurd, D.W.; Rokop, D.J.; Benjamin, T.M.

    1999-05-01

    Historical operations at the Los Alamos National Laboratory have contaminated stream sediments with plutonium and other radionuclides. A small portion of these contaminated sediments has been carried by floods into the Rio Grande drainage system, eventually to be trapped by Cochiti Lake located on Pueblo de Cochiti lands approximately 8 km downstream of the Laboratory. In this study, lake bottom sediment samples provided by the Pueblo de Cochiti were analyzed by thermal ionization mass spectrometry to determine plutonium and uranium activity levels and isotopic atom ratios. This specialized analytical method allows us to take isotopic fingerprints of radionuclides found in the sediment and to determine how much plutonium and uranium came from the Laboratory and how much was deposited by worldwide fallout or is natural. Two distinct types of samples were processed: segments of a continuous vertical core of the entire accumulated sediment sequence and other samples from across the lake bottom at the water/sediment interface. Based on measurement of the {sup 240}Pu/{sup 239}Pu atom ratio, Laboratory-derived plutonium is present in eight of nine samples at the core site. On a depth-weighted basis, approximately one-half of the {sup 239}Pu and {sup 240}Pu came from early operations at the Laboratory; the remaining plutonium came from fallout dispersed by above-ground nuclear tests. In contrast to the core site, the samples from the other locations showed little or no evidence of Laboratory-derived plutonium, with more than 90 percent of the plutonium attributable to fallout. The overall amount of plutonium in all the samples is of the same magnitude as other reservoirs in the region. The net increase in plutonium over upstream reservoirs unaffected by Laboratory activities is a maximum of 0.014 pCi/g or 3.5 times. All of the samples reflect natural uranium compositions. Laboratory-derived uranium is not identifiable, presumably because the sediment contains abundant

  17. Hybrid interferometric/dispersive atomic spectroscopy of laser-induced uranium plasma

    NASA Astrophysics Data System (ADS)

    Morgan, Phyllis K.; Scott, Jill R.; Jovanovic, Igor

    2016-02-01

    An established optical emission spectroscopy technique, laser-induced breakdown spectroscopy (LIBS), holds promise for detection and rapid analysis of elements relevant for nuclear safeguards, nonproliferation, and nuclear power, including the measurement of isotope ratios. One such important application of LIBS is the measurement of uranium enrichment (235U/238U), which requires high spectral resolution (e.g., 25 pm for the 424.4 nm U II line). High-resolution dispersive spectrometers necessary for such measurements are typically bulky and expensive. We demonstrate the use of an alternative measurement approach, which is based on an inexpensive and compact Fabry-Perot etalon integrated with a low to moderate resolution Czerny-Turner spectrometer, to achieve the resolution needed for isotope selectivity of LIBS of uranium in ambient air. Spectral line widths of ~ 10 pm have been measured at a center wavelength 424.437 nm, clearly discriminating the natural from the highly enriched uranium.

  18. Assessment of current atomic scale modelling methods for the investigation of nuclear fuels under irradiation: Example of uranium dioxide

    SciTech Connect

    Bertolus, Marjorie; Krack, Matthias; Freyss, Michel; Devanathan, Ram

    2015-10-13

    Multiscale approaches are developed to build more physically based kinetic and mechanical mesoscale models to enhance the predictive capability of fuel performance codes and increase the efficiency of the development of the safer and more innovative nuclear materials needed in the future. Atomic scale methods, and in particular electronic structure and empirical potential methods, form the basis of this multiscale approach. It is therefore essential to know the accuracy of the results computed at this scale if we want to feed them into higher scale models. We focus here on the assessment of the description of interatomic interactions in uranium dioxide using on the one hand electronic structure methods, in particular in the density functional theory (DFT) framework and on the other hand empirical potential methods. These two types of methods are complementary, the former enabling to get results from a minimal amount of input data and further insight into the electronic and magnetic properties, while the latter are irreplaceable for studies where a large number of atoms needs to be considered. We consider basic properties as well as specific ones, which are important for the description of nuclear fuel under irradiation. These are especially energies, which are the main data passed to higher scale models. We limit ourselves to uranium dioxide.

  19. Chromium silicide formation by ion mixing

    NASA Technical Reports Server (NTRS)

    Shreter, U.; So, F. C. T.; Nicolet, M.-A.

    1984-01-01

    The formation of CrSi2 by ion mixing was studied as a function of temperature, silicide thickness and irradiated interface. Samples were prepared by annealing evaporated couples of Cr on Si and Si on Cr at 450 C for short times to form Si/CrSi2/Cr sandwiches. Xenon beams with energies up to 300 keV and fluences up to 8 x 10 to the 15th per sq cm were used for mixing at temperatures between 20 and 300 C. Penetrating only the Cr/CrSi2 interface at temperatures above 150 C induces further growth of the silicide as a uniform stoichiometric layer. The growth rate does not depend on the thickness of the initially formed silicide at least up to a thickness of 150 nm. The amount of growth depends linearly on the density of energy deposited at the interface. The growth is temperature dependent with an apparent activation energy of 0.2 eV. Irradiating only through the Si/CrSi2 interface does not induce silicide growth. It is concluded that the formation of CrSi2 by ion beam mixing is an interface-limited process and that the limiting reaction occurs at the Cr/CrSi2 interface.

  20. Challenges of nickel silicidation in CMOS technologies

    SciTech Connect

    Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet; Baumann, Frieder; Klymko, Nancy; Nummy, Karen; Sun, Bing; Jordan-Sweet, Jean; Yu, Jian; Zhu, Frank; Narasimha, Shreesh; Chudzik, Michael

    2015-04-01

    In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.

  1. Synthesis and design of silicide intermetallic materials

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.

    1997-04-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries. The program presently has a number of developing industrial connections, including a CRADA with Schuller International Inc. targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. Current experimental emphasis is on the development and characterization of MoSi{sub 2}-Si{sub 3}N{sub 4} and MoSi{sub 2}-SiC composites, the plasma spraying of MoSi{sub 2}-based materials, and the joining of MoSi{sub 2} materials to metals.

  2. Hybrid interferometric/dispersive atomic spectroscopy of laser-induced uranium plasma

    SciTech Connect

    Morgan, Phyllis K.; Scott, Jill R.; Jovanovic, Igor

    2015-12-19

    An established optical emission spectroscopy technique, laser-induced breakdown spectroscopy (LIBS), holds promise for detection and rapid analysis of elements relevant for nuclear safeguards, nonproliferation, and nuclear power, including the measurement of isotope ratios. One such important application of LIBS is the measurement of uranium enrichment (235U/238U), which requires high spectral resolution (e.g., 25 pm for the 424.4 nm U II line). High-resolution dispersive spectrometers necessary for such measurements are typically bulky and expensive. We demonstrate the use of an alternative measurement approach, which is based on an inexpensive and compact Fabry–Perot etalon integrated with a low to moderate resolution Czerny–Turner spectrometer, to achieve the resolution needed for isotope selectivity of LIBS of uranium in ambient air. Furthermore, spectral line widths of ~ 10 pm have been measured at a center wavelength 424.437 nm, clearly discriminating the natural from the highly enriched uranium.

  3. Hybrid interferometric/dispersive atomic spectroscopy of laser-induced uranium plasma

    DOE PAGES

    Morgan, Phyllis K.; Scott, Jill R.; Jovanovic, Igor

    2015-12-19

    An established optical emission spectroscopy technique, laser-induced breakdown spectroscopy (LIBS), holds promise for detection and rapid analysis of elements relevant for nuclear safeguards, nonproliferation, and nuclear power, including the measurement of isotope ratios. One such important application of LIBS is the measurement of uranium enrichment (235U/238U), which requires high spectral resolution (e.g., 25 pm for the 424.4 nm U II line). High-resolution dispersive spectrometers necessary for such measurements are typically bulky and expensive. We demonstrate the use of an alternative measurement approach, which is based on an inexpensive and compact Fabry–Perot etalon integrated with a low to moderate resolution Czerny–Turnermore » spectrometer, to achieve the resolution needed for isotope selectivity of LIBS of uranium in ambient air. Furthermore, spectral line widths of ~ 10 pm have been measured at a center wavelength 424.437 nm, clearly discriminating the natural from the highly enriched uranium.« less

  4. Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

    SciTech Connect

    Escobedo-Cousin, Enrique; Vassilevski, Konstantin; Hopf, Toby; Wright, Nick; O'Neill, Anthony; Horsfall, Alton; Goss, Jonathan; Cumpson, Peter

    2013-03-21

    Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semi-insulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such as the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS, and atomic force microscopy. The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films. A simple model of diffusion-driven solid phase chemical reaction was used to explain formation of the FLG film at the interface between nickel silicide and silicon carbide.

  5. Microwave absorption properties of Ni/(C, silicides) nanocapsules

    PubMed Central

    2012-01-01

    The microwave absorption properties of Ni/(C, silicides) nanocapsules prepared by an arc discharge method have been studied. The composition and the microstructure of the Ni/(C, silicides) nanocapsules were determined by means of X-ray diffraction, X-ray photoelectric spectroscopy, and transmission electron microscope observations. Silicides, in the forms of SiOx and SiC, mainly exist in the shells of the nanocapsules and result in a large amount of defects at the ‘core/shell’ interfaces as well as in the shells. The complex permittivity and microwave absorption properties of the Ni/(C, silicides) nanocapsules are improved by the doped silicides. Compared with those of Ni/C nanocapsules, the positions of maximum absorption peaks of the Ni/(C, silicides) nanocapsules exhibit large red shifts. An electric dipole model is proposed to explain this red shift phenomenon. PMID:22548846

  6. Microwave absorption properties of Ni/(C, silicides) nanocapsules

    NASA Astrophysics Data System (ADS)

    Jiang, Jingjing; Wang, Han; Guo, Huaihong; Yang, Teng; Tang, Wen-Shu; Li, Da; Ma, Song; Geng, Dianyu; Liu, Wei; Zhang, Zhidong

    2012-05-01

    The microwave absorption properties of Ni/(C, silicides) nanocapsules prepared by an arc discharge method have been studied. The composition and the microstructure of the Ni/(C, silicides) nanocapsules were determined by means of X-ray diffraction, X-ray photoelectric spectroscopy, and transmission electron microscope observations. Silicides, in the forms of SiOx and SiC, mainly exist in the shells of the nanocapsules and result in a large amount of defects at the `core/shell' interfaces as well as in the shells. The complex permittivity and microwave absorption properties of the Ni/(C, silicides) nanocapsules are improved by the doped silicides. Compared with those of Ni/C nanocapsules, the positions of maximum absorption peaks of the Ni/(C, silicides) nanocapsules exhibit large red shifts. An electric dipole model is proposed to explain this red shift phenomenon.

  7. Microwave absorption properties of Ni/(C, silicides) nanocapsules.

    PubMed

    Jiang, Jingjing; Wang, Han; Guo, Huaihong; Yang, Teng; Tang, Wen-Shu; Li, Da; Ma, Song; Geng, Dianyu; Liu, Wei; Zhang, Zhidong

    2012-05-01

    The microwave absorption properties of Ni/(C, silicides) nanocapsules prepared by an arc discharge method have been studied. The composition and the microstructure of the Ni/(C, silicides) nanocapsules were determined by means of X-ray diffraction, X-ray photoelectric spectroscopy, and transmission electron microscope observations. Silicides, in the forms of SiOx and SiC, mainly exist in the shells of the nanocapsules and result in a large amount of defects at the 'core/shell' interfaces as well as in the shells. The complex permittivity and microwave absorption properties of the Ni/(C, silicides) nanocapsules are improved by the doped silicides. Compared with those of Ni/C nanocapsules, the positions of maximum absorption peaks of the Ni/(C, silicides) nanocapsules exhibit large red shifts. An electric dipole model is proposed to explain this red shift phenomenon.

  8. First-principles study on the interaction of nitrogen atom with α–uranium: From surface adsorption to bulk diffusion

    SciTech Connect

    Su, Qiulei; Deng, Huiqiu E-mail: hqdeng@gmail.com; Xiao, Shifang; Li, Xiaofan; Hu, Wangyu; Ao, Bingyun; Chen, Piheng

    2014-04-28

    Experimental studies of nitriding on uranium surfaces show that the modified layers provide considerable protection against air corrosion. The bimodal distribution of nitrogen is affected by both its implantation and diffusion, and the diffusion of nitrogen during implantation is also governed by vacancy trapping. In the present paper, nitrogen adsorption, absorption, diffusion, and vacancy trapping on the surface of and in the bulk of α–uranium are studied with a first-principles density functional theory approach and the climbing image nudged elastic band method. The calculated results indicate that, regardless of the nitrogen coverage, a nitrogen atom prefers to reside at the hollow1 site and octahedral (Oct) site on and below the surface, respectively. The lowest energy barriers for on-surface and penetration diffusion occur at a coverage of 1/2 monolayer. A nitrogen atom prefers to occupy the Oct site in bulk α–uranium. High energy barriers are observed during the diffusion between neighboring Oct sites. A vacancy can capture its nearby interstitial nitrogen atom with a low energy barrier, providing a significant attractive nitrogen-vacancy interaction at the trapping center site. This study provides a reference for understanding the nitriding process on uranium surfaces.

  9. Environmental site description for a Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) production plant at the Paducah Gaseous Diffusion Plant site

    SciTech Connect

    Marmer, G.J.; Dunn, C.P.; Moeller, K.L.; Pfingston, J.M.; Policastro, A.J.; Yuen, C.R.; Cleland, J.H.

    1991-09-01

    Uranium enrichment in the United States has utilized a diffusion process to preferentially enrich the U-235 isotope in the uranium product. The U-AVLIS process is based on electrostatic extraction of photoionized U-235 atoms from an atomic vapor stream created by electron-beam vaporization of uranium metal alloy. The U-235 atoms are ionized when precisely tuned laser light -- of appropriate power, spectral, and temporal characteristics -- illuminates the uranium vapor and selectively photoionizes the U-235 isotope. A programmatic document for use in screening DOE site to locate a U-AVLIS production plant was developed and implemented in two parts. The first part consisted of a series of screening analyses, based on exclusionary and other criteria, that identified a reasonable number of candidate sites. These sites were subjected to a more rigorous and detailed comparative analysis for the purpose of developing a short list of reasonable alternative sites for later environmental examination. This environmental site description (ESD) provides a detailed description of the PGDP site and vicinity suitable for use in an environmental impact statement (EIS). The report is based on existing literature, data collected at the site, and information collected by Argonne National Laboratory (ANL) staff during a site visit. 65 refs., 15 tabs.

  10. Solution synthesis of metal silicide nanoparticles.

    PubMed

    McEnaney, Joshua M; Schaak, Raymond E

    2015-02-01

    Transition-metal silicides are part of an important family of intermetallic compounds, but the high-temperature reactions that are generally required to synthesize them preclude the formation of colloidal nanoparticles. Here, we show that palladium, copper, and nickel nanoparticles react with monophenylsilane in trioctylamine and squalane at 375 °C to form colloidal Pd(2)Si, Cu(3)Si, and Ni(2)Si nanoparticles, respectively. These metal silicide nanoparticles were screened as electrocatalysts for the hydrogen evolution reaction, and Pd(2)Si and Ni(2)Si were identified as active catalysts that require overpotentials of -192 and -243 mV, respectively, to produce cathodic current densities of -10 mA cm(-2).

  11. Silicide formation and dopant diffusion in silicon

    NASA Astrophysics Data System (ADS)

    Wittmer, M.; Fahey, P.; Cotte, J.; Iyer, S. S.; Scilla, G. J.

    1992-05-01

    Recently, we reported that formation of Pd2Si from Pd induced asymmetric diffusion of buried dopant marker layers in the silicon substrate at surprisingly low temperatures (~200 °C) [M. Wittmer, P. Fahey, G. J. Scilla, S. S. Iyer, and M. Tejwani, Phys. Rev. Lett. 66, 632 (1991)]. We concluded that asymmetric diffusion could not be readily explained within the framework of existing diffusion theories. In this investigation we have examined in detail whether the observed asymmetries in profile shapes after silicidation could be induced by the secondary-ion mass spectroscopy (SIMS) profiling technique; however, we were unable to show that asymmetries can be attributed solely to the SIMS measurements. We have also utilized high-resolution Rutherford backscattering to confirm with another profiling technique that dopant diffusion does indeed occur as a result of the silicidation process.

  12. Influence of instrument conditions on the evaporation behavior of uranium dioxide with UV laser-assisted atom probe tomography

    SciTech Connect

    Valderrama, B.; Henderson, H.B.; Gan, J.; Manuel, M.V.

    2015-04-01

    Atom probe tomography (APT) provides the ability to detect subnanometer chemical variations spatially, with high accuracy. However, it is known that compositional accuracy can be affected by experimental conditions. A study of the effect of laser energy, specimen base temperature, and detection rate is performed on the evaporation behavior of uranium dioxide (UO2). In laser-assisted mode, tip geometry and standing voltage also contribute to the evaporation behavior. In this investigation, it was determined that modifying the detection rate and temperature did not affect the evaporation behavior as significantly as laser energy. It was also determined that three laser evaporation regimes are present in UO2. Very low laser energy produces a behavior similar to DC-field evaporation, moderate laser energy produces the desired laser-assisted field evaporation characteristic and high laser energy induces thermal effects, negatively altering the evaporation behavior. The need for UO2 to be analyzed under moderate laser energies to produce accurate stoichiometry distinguishes it from other oxides. The following experimental conditions providing the best combination of mass resolving power, accurate stoichiometry, and uniform evaporation behavior: 50 K, 10 pJ laser energy, a detection rate of 0.003 atoms per pulse, and a 100 kHz repetition rate.

  13. Rare Earth Metal Silicides and exotic Nuclei

    NASA Astrophysics Data System (ADS)

    Kriske, Richard

    2009-11-01

    The use of Rare Earth Metal Silicides has been seen in thermal detection since World War II. What results can be expected when Rare Earths are used with certain isotopes? More to the point can exotic isotopes of Rare Earths be made from what is known more recently about Hadrons and their construction? What if anything can be gained from manipulating isotopes with a more recent theory than that known around World War II?

  14. Fusion silicide coatings for tantalum alloys.

    NASA Technical Reports Server (NTRS)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    Calculation of the performance of fusion silicide coatings under simulated atmospheric reentry conditions to a maximum temperature of 1810 K (2800 F). Both recently developed and commercially available coatings are included. Data are presented on oxidation rate with and without intentional defecting, the influence of the coatings on the ductile-brittle bend transition temperature, and the mechanical properties. Coatings appear capable of affording protection for at least 100 simulated cycles to 2600 F and 63 cycles to 2800 F.

  15. Subsurface structure of epitaxial rare-earth silicides imaged by STM

    NASA Astrophysics Data System (ADS)

    Rogero, C.; Martín-Gago, J. A.; Cerdá, J. I.

    2006-09-01

    We combine scanning tunneling microscopy (STM) images, density functional theory total energy calculations, and STM simulations to conclusively determine the surface structure of the Y3Si5(0001) silicide epitaxially grown on Si(111) . We observe, for the same sample, two different types of atomic resolution images exhibiting either p3m or p6 symmetry, in analogy with previous works on similar rare-earth silicide surfaces. We elucidate the long-standing controversy regarding the interpretation of these images by showing that they are mainly related to the registry of the surfacemost Si bilayer with respect to the Si vacancy network located two layers below the surface and, therefore, to the existence of two different buried structural domains. Our results demonstrate an unsual STM depth sensitivity—up to 5Å —for metallic systems.

  16. The formation of magnetic silicide Fe3Si clusters during ion implantation

    NASA Astrophysics Data System (ADS)

    Balakirev, N.; Zhikharev, V.; Gumarov, G.

    2014-05-01

    A simple two-dimensional model of the formation of magnetic silicide Fe3Si clusters during high-dose Fe ion implantation into silicon has been proposed and the cluster growth process has been computer simulated. The model takes into account the interaction between the cluster magnetization and magnetic moments of Fe atoms random walking in the implanted layer. If the clusters are formed in the presence of the external magnetic field parallel to the implanted layer, the model predicts the elongation of the growing cluster in the field direction. It has been proposed that the cluster elongation results in the uniaxial magnetic anisotropy in the plane of the implanted layer, which is observed in iron silicide films ion-beam synthesized in the external magnetic field.

  17. Formation, structure, and orientation of gold silicide on gold surfaces

    NASA Technical Reports Server (NTRS)

    Green, A. K.; Bauer, E.

    1976-01-01

    The formation of gold silicide on Au films evaporated onto Si(111) surfaces is studied by Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED). Surface condition, film thickness, deposition temperature, annealing temperature, and heating rate during annealing are varied. Several oriented crystalline silicide layers are observed.

  18. Raman scattering from rapid thermally annealed tungsten silicide

    NASA Technical Reports Server (NTRS)

    Kumar, Sandeep; Dasgupta, Samhita; Jackson, Howard E.; Boyd, Joseph T.

    1987-01-01

    Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.

  19. Thermal Stability of Magnesium Silicide/Nickel Contacts

    NASA Astrophysics Data System (ADS)

    de Boor, J.; Droste, D.; Schneider, C.; Janek, J.; Mueller, E.

    2016-06-01

    Magnesium silicide-based materials are a very promising class of thermoelectric materials with excellent potential for thermoelectric waste heat recovery. For the successful application of magnesium silicide-based thermoelectric generators, the development of long-term stable contacts with low contact resistance is as important as material optimization. We have therefore studied the suitability of Ni as a contact material for magnesium silicide. Co-sintering of magnesium silicide and Ni leads to the formation of a stable reaction layer with low electrical resistance. In this paper we show that the contacts retain their low electrical contact resistance after annealing at temperatures up to 823 K for up to 168 h. By employing scanning electron microscope analysis and time-of-flight (ToF)-secondary ion mass spectrometry, we can further show that elemental diffusion is occurring to a very limited extent. This indicates long-term stability under practical operation conditions for magnesium silicide/nickel contacts.

  20. Thermal Stability of Magnesium Silicide/Nickel Contacts

    NASA Astrophysics Data System (ADS)

    de Boor, J.; Droste, D.; Schneider, C.; Janek, J.; Mueller, E.

    2016-10-01

    Magnesium silicide-based materials are a very promising class of thermoelectric materials with excellent potential for thermoelectric waste heat recovery. For the successful application of magnesium silicide-based thermoelectric generators, the development of long-term stable contacts with low contact resistance is as important as material optimization. We have therefore studied the suitability of Ni as a contact material for magnesium silicide. Co-sintering of magnesium silicide and Ni leads to the formation of a stable reaction layer with low electrical resistance. In this paper we show that the contacts retain their low electrical contact resistance after annealing at temperatures up to 823 K for up to 168 h. By employing scanning electron microscope analysis and time-of-flight (ToF)-secondary ion mass spectrometry, we can further show that elemental diffusion is occurring to a very limited extent. This indicates long-term stability under practical operation conditions for magnesium silicide/nickel contacts.

  1. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

    SciTech Connect

    Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E.

    2004-09-28

    A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

  2. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, A.J.; Akinc, M.

    1996-12-03

    A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

  3. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, Andrew J.; Akinc, Mufit

    1998-07-14

    A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

  4. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, A.J.; Akinc, M.

    1998-07-14

    A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

  5. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, Andrew J.; Akinc, Mufit

    1996-12-03

    A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

  6. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, A.J.; Akinc, M.

    1997-12-02

    A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

  7. Carbon or boron modified titanium silicide

    DOEpatents

    Thom, Andrew J.; Akinc, Mufit

    1997-12-02

    A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

  8. Uranium Adsorbent Fibers Prepared by Atom-Transfer Radical Polymerization (ATRP) from Poly(vinyl chloride)- co -chlorinated Poly(vinyl chloride) (PVC- co -CPVC) Fiber

    DOE PAGES

    Brown, Suree; Yue, Yanfeng; Kuo, Li-Jung; Mehio, Nada; Li, Meijun; Gill, Gary; Tsouris, Costas; Mayes, Richard T.; Saito, Tomonori; Dai, Sheng

    2016-03-11

    The need to secure future supplies of energy attracts researchers in several countries to a vast resource of nuclear energy fuel: uranium in seawater (estimated at 4.5 billion tons in seawater). In this study, we developed effective adsorbent fibers for the recovery of uranium from seawater via atom-transfer radical polymerization (ATRP) from a poly-(vinyl chloride)-co-chlorinated poly(vinyl chloride) (PVC-co-CPVC) fiber. ATRP was employed in the surface graft polymerization of acrylonitrile (AN) and tert-butyl acrylate (tBA), precursors for uranium-interacting functional groups, from PVC-co-CPVC fiber. The [tBA]/[AN] was systematically varied to identify the optimal ratio between hydrophilic groups (from tBA) and uranyl-binding ligandsmore » (from AN). The best performing adsorbent fiber, the one with the optimal [tBA]/[AN] ratio and a high degree of grafting (1390%), demonstrated uranium adsorption capacities that are significantly greater than those of the Japan Atomic Energy Agency (JAEA) reference fiber in natural seawater tests (2.42 3.24 g/kg in 42 days of seawater exposure and 5.22 g/kg in 49 days of seawater exposure, versus 1.66 g/kg in 42 days of seawater exposure and 1.71 g/kg in 49 days of seawater exposure for JAEA). Lastly, adsorption of other metal ions from seawater and their corresponding kinetics were also studied. The grafting of alternative monomers for the recovery of uranium from seawater is now under development by this versatile technique of ATRP.« less

  9. Tungsten silicide formation from sequentially sputtered tungsten and silicon films

    NASA Astrophysics Data System (ADS)

    Molarius, J. M.; Franssila, S.; Drozdy, G.; Saarilahti, J.

    1991-11-01

    As-deposited tungsten silicide films have typically high resistivity and require annealing to lower the resistivity to practical values. Rapid thermal annealing (RTA) has emerged as the main method because impurity diffusion in silicides is extremely fast. In this study we have explored the possibility of reducing the required thermal budget for tungsten silicide annealing by sputtering multilayer W /Si films. In addition to direct technological relevance, multilayer structures offer new insights into silicide formation. We propose a hypothesis "oxygen supply to interface ratio" for explaining why multilayer W /Si structures are beneficial for silicide formation. We have prevented the possible oxygen barrier formation at the W /Si interface by diminishing the oxygen supply by several means: substrate heating during deposition, multiple thin layers, a silicon capping layer and argon purging during RTA. Tetragonal WSi 2 is formed at 700°C and no silicon-rich phases are observed. Low-resistivity WSi 2 is produced by RTA at 1000°C, 120 s. Sheet resistance values around 3 ω/□ amends the use of tungsten silicide in practical polycide structures. The ultimate resistivity of our WSi 2, 30 μω · cm, is among the lowest reported for tungsten silicide, and it is achieved in a very straightforward fashion, using typical production equipment.

  10. Boron modified molybdenum silicide and products

    DOEpatents

    Meyer, M.K.; Akinc, M.

    1999-02-02

    A boron-modified molybdenum silicide material is disclosed having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo{sub 5}Si{sub 3} phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi{sub 2} heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo{sub 5}Si{sub 3} for structural integrity. 7 figs.

  11. Boron modified molybdenum silicide and products

    DOEpatents

    Meyer, Mitchell K.; Akinc, Mufit

    1999-02-02

    A boron-modified molybdenum silicide material having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo.sub.5 Si.sub.3 phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi.sub.2 heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo.sub.5 Si.sub.3 for structural integrity.

  12. The effect of uranium on bacterial viability and cell surface morphology using atomic force microscopy in the presence of bicarbonate ions.

    PubMed

    Sepulveda-Medina, Paola; Katsenovich, Yelena; Musaramthota, Vishal; Lee, Michelle; Lee, Brady; Dua, Rupak; Lagos, Leonel

    2015-06-01

    Past disposal practices at nuclear production facilities have led to the release of liquid waste into the environment creating multiple radionuclide plumes. Microorganisms are known for the ability to interact with radionuclides and impact their mobility in soils and sediments. Gram-positive Arthrobacter sp. are one of the most common bacterial groups in soils and are found in large numbers in subsurface environments contaminated with radionuclides. This study experimentally analyzed changes on the bacteria surface at the nanoscale level after uranium exposure and evaluated the effect of aqueous bicarbonate ions on U(VI) toxicity of a low uranium-tolerant Arthrobacter oxydans strain G968 by investigating changes in adhesion forces and cell dimensions via atomic force microscopy (AFM). Experiments were extended to assess cell viability by the Live/Dead BacLight Bacterial Viability Kit (Molecular Probes) and quantitatively illustrate the effect of uranium exposure in the presence of varying concentrations of bicarbonate ions. AFM and viability studies showed that samples containing bicarbonate were able to withstand uranium toxicity and remained viable. Samples containing no bicarbonate exhibited deformed surfaces and a low height profile, which, in conjunction with viability studies, indicated that the cells were not viable.

  13. A poly(acrylonitrile)-functionalized porous aromatic framework synthesized by atom-transfer radical polymerization for the extraction of uranium from seawater

    DOE PAGES

    Yue, Yanfeng; Zhang, Chenxi; Tang, Qing; Mayes, Richard T.; Liao, Wei -Po; Liao, Chen; Tsouris, Costas; Stankovich, Joseph J.; Chen, Jihua; Hensley, Dale K.; et al

    2015-10-30

    In order to ensure a sustainable reserve of fuel for nuclear power generation, tremendous research efforts have been devoted to developing advanced sorbent materials for extracting uranium from seawater. In this work, a porous aromatic framework (PAF) was surface-functionalized with poly(acrylonitrile) through atom-transfer radical polymerization (ATRP). Batches of this adsorbent were conditioned with potassium hydroxide (KOH) at room temperature or 80 °C prior to contact with a uranium-spiked seawater simulant, with minimal differences in uptake observed as a function of conditioning temperature. A maximum capacity of 4.81 g-U/kg-ads was obtained following 42 days contact with uranium-spiked filtered environmental seawater, whichmore » demonstrates a comparable adsorption rate. A kinetic investigation revealed extremely rapid uranyl uptake, with more than 80% saturation reached within 14 days. Furthermore, relying on the semiordered structure of the PAF adsorbent, density functional theory (DFT) calculations reveal cooperative interactions between multiple adsorbent groups yield a strong driving force for uranium binding.« less

  14. A poly(acrylonitrile)-functionalized porous aromatic framework synthesized by atom-transfer radical polymerization for the extraction of uranium from seawater

    SciTech Connect

    Yue, Yanfeng; Zhang, Chenxi; Tang, Qing; Mayes, Richard T.; Liao, Wei -Po; Liao, Chen; Tsouris, Costas; Stankovich, Joseph J.; Chen, Jihua; Hensley, Dale K.; Abney, Carter W.; Jiang, De-en; Brown, Suree; Dai, Sheng

    2015-10-30

    In order to ensure a sustainable reserve of fuel for nuclear power generation, tremendous research efforts have been devoted to developing advanced sorbent materials for extracting uranium from seawater. In this work, a porous aromatic framework (PAF) was surface-functionalized with poly(acrylonitrile) through atom-transfer radical polymerization (ATRP). Batches of this adsorbent were conditioned with potassium hydroxide (KOH) at room temperature or 80 °C prior to contact with a uranium-spiked seawater simulant, with minimal differences in uptake observed as a function of conditioning temperature. A maximum capacity of 4.81 g-U/kg-ads was obtained following 42 days contact with uranium-spiked filtered environmental seawater, which demonstrates a comparable adsorption rate. A kinetic investigation revealed extremely rapid uranyl uptake, with more than 80% saturation reached within 14 days. Furthermore, relying on the semiordered structure of the PAF adsorbent, density functional theory (DFT) calculations reveal cooperative interactions between multiple adsorbent groups yield a strong driving force for uranium binding.

  15. ITEP MEVVA ion beam for rhenium silicide production

    SciTech Connect

    Kulevoy, T.; Seleznev, D.; Kropachev, G.; Kozlov, A.; Kuibeda, R.; Yakushin, P.; Petrenko, S.; Gerasimenko, N.; Medetov, N.; Zaporozhan, O.

    2010-02-15

    The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

  16. Microalloying of transition metal silicides by mechanical activation and field-activated reaction

    DOEpatents

    Munir, Zuhair A.; Woolman, Joseph N.; Petrovic, John J.

    2003-09-02

    Alloys of transition metal suicides that contain one or more alloying elements are fabricated by a two-stage process involving mechanical activation as the first stage and densification and field-activated reaction as the second stage. Mechanical activation, preferably performed by high-energy planetary milling, results in the incorporation of atoms of the alloying element(s) into the crystal lattice of the transition metal, while the densification and field-activated reaction, preferably performed by spark plasma sintering, result in the formation of the alloyed transition metal silicide. Among the many advantages of the process are its ability to accommodate materials that are incompatible in other alloying methods.

  17. On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

    NASA Astrophysics Data System (ADS)

    Fatima, Can Oguz, Ismail; ćakır, Deniz; Hossain, Sehtab; Mohottige, Rasika; Gulseren, Oguz; Oncel, Nuri

    2016-09-01

    Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77 K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires.

  18. Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

    SciTech Connect

    El-Atwani, Osman; Gonderman, Sean; Suslova, Anastassiya; Fowler, Justin; El-Atwani, Mohamad; DeMasi, Alexander; Ludwig, Karl; Paul Allain, Jean

    2013-03-28

    We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for a time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution.

  19. A promising new thermoelectric material - Ruthenium silicide

    NASA Technical Reports Server (NTRS)

    Vining, Cronin B.; Mccormack, Joseph A.; Zoltan, Andrew; Zoltan, Leslie D.

    1991-01-01

    Experimental and theoretical efforts directed toward increasing thermoelectric figure of merit values by a factor of 2 or 3 have been encouraging in several respects. An accurate and detailed theoretical model developed for n-type silicon-germanium (SiGe) indicates that ZT values several times higher than currently available are expected under certain conditions. These new, high ZT materials are expected to be significantly different from SiGe, but not unreasonably so. Several promising candidate materials have been identified which may meet the conditions required by theory. One such candidate, ruthenium silicide, currently under development at JPL, has been estimated to have the potential to exhibit figure of merit values 4 times higher than conventional SiGe materials. Recent results are summarized.

  20. Valence photoelectron spectroscopy of Gd silicides

    SciTech Connect

    Braicovich, L. ); Puppin, E.; Lindau, I. ); Iandelli, A.; Olcese, G.L.; Palenzona, A. )

    1990-02-15

    Gd{sub 3}Si{sub 5}, GdSi, and Gd{sub 5}Si{sub 3} were investigated with photoemission spectroscopy in the photon-energy range 40.8--149 eV by exploiting the energy dependence of the photoemission cross sections and the valence resonance at the crossing of the Gd 4{ital d}-4{ital f} threshold. The modification of the spectra versus photon energy, along with their stoichiometry dependence, show the relevance of covalent mixed Gd 5{ital d}--Si 3{ital sp} states in the formation of the chemical bond. In the region close to the Fermi level an increase of the {ital d} contribution is observed. These points are discussed in connection with the existing models of the silicide bond.

  1. ZPR-3 Assembly 6F : A spherical assembly of highly enriched uranium, depleted uranium, aluminum and steel with an average {sup 235}U enrichment of 47 atom %.

    SciTech Connect

    Lell, R. M.; McKnight, R. D; Schaefer, R. W.; Nuclear Engineering Division

    2010-09-30

    Over a period of 30 years, more than a hundred Zero Power Reactor (ZPR) critical assemblies were constructed at Argonne National Laboratory. The ZPR facilities, ZPR-3, ZPR-6, ZPR-9 and ZPPR, were all fast critical assembly facilities. The ZPR critical assemblies were constructed to support fast reactor development, but data from some of these assemblies are also well suited for nuclear data validation and to form the basis for criticality safety benchmarks. A number of the Argonne ZPR/ZPPR critical assemblies have been evaluated as ICSBEP and IRPhEP benchmarks. Of the three classes of ZPR assemblies, engineering mockups, engineering benchmarks and physics benchmarks, the last group tends to be most useful for criticality safety. Because physics benchmarks were designed to test fast reactor physics data and methods, they were as simple as possible in geometry and composition. The principal fissile species was {sup 235}U or {sup 239}Pu. Fuel enrichments ranged from 9% to 95%. Often there were only one or two main core diluent materials, such as aluminum, graphite, iron, sodium or stainless steel. The cores were reflected (and insulated from room return effects) by one or two layers of materials such as depleted uranium, lead or stainless steel. Despite their more complex nature, a small number of assemblies from the other two classes would make useful criticality safety benchmarks because they have features related to criticality safety issues, such as reflection by soil-like material. ZPR-3 Assembly 6 consisted of six phases, A through F. In each phase a critical configuration was constructed to simulate a very simple shape such as a slab, cylinder or sphere that could be analyzed with the limited analytical tools available in the 1950s. In each case the configuration consisted of a core region of metal plates surrounded by a thick depleted uranium metal reflector. The average compositions of the core configurations were essentially identical in phases A - F. ZPR-3

  2. Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties.

    PubMed

    Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Huang, Yu-Ting; Hu, Jung-Chih; Chen, Lien-Tai; Hsin, Cheng-Lun; Wu, Wen-Wei

    2013-06-01

    Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology.

  3. {sup 45}Sc Solid State NMR studies of the silicides ScTSi (T=Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt)

    SciTech Connect

    Harmening, Thomas; Eckert, Hellmut; Fehse, Constanze M.; Sebastian, C. Peter; Poettgen, Rainer

    2011-12-15

    The silicides ScTSi (T=Fe, Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt) were synthesized by arc-melting and characterized by X-ray powder diffraction. The structures of ScCoSi, ScRuSi, ScPdSi, and ScIrSi were refined from single crystal diffractometer data. These silicides crystallize with the TiNiSi type, space group Pnma. No systematic influences of the {sup 45}Sc isotropic magnetic shift and nuclear electric quadrupolar coupling parameters on various structural distortion parameters calculated from the crystal structure data can be detected. {sup 45}Sc MAS-NMR data suggest systematic trends in the local electronic structure probed by the scandium atoms: both the electric field gradients and the isotropic magnetic shifts relative to a 0.2 M aqueous Sc(NO{sub 3}){sub 3} solution decrease with increasing valence electron concentration and within each T group the isotropic magnetic shift decreases monotonically with increasing atomic number. The {sup 45}Sc nuclear electric quadrupolar coupling constants are generally well reproduced by quantum mechanical electric field gradient calculations using the WIEN2k code. Highlights: Black-Right-Pointing-Pointer Arc-melting synthesis of silicides ScTSi. Black-Right-Pointing-Pointer Single crystal X-ray data of ScCoSi, ScRuSi, ScPdSi, and ScIrSi. Black-Right-Pointing-Pointer {sup 45}Sc solid state NMR of silicides ScTSi.

  4. Rate Theory Modeling and Simulations of Silicide Fuel at LWR Conditions

    SciTech Connect

    Miao, Yinbin; Ye, Bei; Mei, Zhigang; Hofman, Gerard; Yacout, Abdellatif

    2015-12-10

    Uranium silicide (U3Si2) fuel has higher thermal conductivity and higher uranium density, making it a promising candidate for the accident-tolerant fuel (ATF) used in light water reactors (LWRs). However, previous studies on the fuel performance of U3Si2, including both experimental and computational approaches, have been focusing on the irradiation conditions in research reactors, which usually involve low operation temperatures and high fuel burnups. Thus, it is important to examine the fuel performance of U3Si2 at typical LWR conditions so as to evaluate the feasibility of replacing conventional uranium dioxide fuel with this silicide fuel material. As in-reactor irradiation experiments involve significant time and financial cost, it is appropriate to utilize modeling tools to estimate the behavior of U3Si2 in LWRs based on all those available research reactor experimental references and state-of-the-art density functional theory (DFT) calculation capabilities at the early development stage. Hence, in this report, a comprehensive investigation of the fission gas swelling behavior of U3Si2 at LWR conditions is introduced. The modeling efforts mentioned in this report was based on the rate theory (RT) model of fission gas bubble evolution that has been successfully applied for a variety of fuel materials at devious reactor conditions. Both existing experimental data and DFT-calculated results were used for the optimization of the parameters adopted by the RT model. Meanwhile, the fuel-cladding interaction was captured by the coupling of the RT model with simplified mechanical correlations. Therefore, the swelling behavior of U3Si2 fuel and its consequent interaction with cladding in LWRs was predicted by the rate theory modeling, providing valuable information for the development of U3Si2 fuel as an accident

  5. Formation, optical properties, and electronic structure of thin Yb silicide films on Si(111)

    NASA Astrophysics Data System (ADS)

    Galkin, N. G.; Maslov, A. M.; Polyarnyi, V. O.

    2005-06-01

    Continuous very thin (2.5-3.0 nm) and thin (16-18 nm) ytterbium suicide films with some pinhole density (3×107- 1×108 cm-2) have been formed on Si(111) by solid phase epitaxy (SPE) and reactive deposition epitaxy (RDE) growth methods on templates. The stoichiometric ytterbium suicide (YbSi2) formation has shown in SPE grown films by AES and EELS data. Very thin Yb suicide films grown by RDE method had the silicon enrichment in YbSi2 suicide composition. The analysis of LEED data and AFM imaging has shown that ytterbium suicide films had non-oriented blocks with the polycrystalline structure. The analysis of scanning region length dependencies of the root mean square roughness deviation (σR(L)) for grown suicide films has shown that the formation of ytterbium suicide in SPE and RDE growth methods is determined by the surface diffusion of Yb atoms during the three-dimensional growth process. Optical functions (n, k, α, ɛ1, ɛ2, Im ɛ1-1, neff, ɛeff) of ytterbium silicide films grown on Si(1 1 1) have been calculated from transmittance and reflectance spectra in the energy range of 0.1-6.2 eV. Two nearly discrete absorption bands have been observed in the electronic structure of Yb silicide films with different composition, which connected with interband transitions on divalent and trivalent Yb states. It was established that the reflection coefficient minimum in R-spectra at energies higher 4.2 eV corresponds to the state density minimum in Yb suicide between divalent and trivalent Yb states. It was shown from optical data that Yb silicide films have the semi-metallic properties with low state densities at energies less 0.4 eV and high state densities at 0.5-2.5 eV.

  6. ZPR-3 Assembly 12 : A cylindrical assembly of highly enriched uranium, depleted uranium and graphite with an average {sup 235}U enrichment of 21 atom %.

    SciTech Connect

    Lell, R. M.; McKnight, R. D.; Perel, R. L.; Wagschal, J. J.; Nuclear Engineering Division; Racah Inst. of Physics

    2010-09-30

    Over a period of 30 years, more than a hundred Zero Power Reactor (ZPR) critical assemblies were constructed at Argonne National Laboratory. The ZPR facilities, ZPR-3, ZPR-6, ZPR-9 and ZPPR, were all fast critical assembly facilities. The ZPR critical assemblies were constructed to support fast reactor development, but data from some of these assemblies are also well suited for nuclear data validation and to form the basis for criticality safety benchmarks. A number of the Argonne ZPR/ZPPR critical assemblies have been evaluated as ICSBEP and IRPhEP benchmarks. Of the three classes of ZPR assemblies, engineering mockups, engineering benchmarks and physics benchmarks, the last group tends to be most useful for criticality safety. Because physics benchmarks were designed to test fast reactor physics data and methods, they were as simple as possible in geometry and composition. The principal fissile species was {sup 235}U or {sup 239}Pu. Fuel enrichments ranged from 9% to 95%. Often there were only one or two main core diluent materials, such as aluminum, graphite, iron, sodium or stainless steel. The cores were reflected (and insulated from room return effects) by one or two layers of materials such as depleted uranium, lead or stainless steel. Despite their more complex nature, a small number of assemblies from the other two classes would make useful criticality safety benchmarks because they have features related to criticality safety issues, such as reflection by soil-like material. ZPR-3 Assembly 12 (ZPR-3/12) was designed as a fast reactor physics benchmark experiment with an average core {sup 235}U enrichment of approximately 21 at.%. Approximately 68.9% of the total fissions in this assembly occur above 100 keV, approximately 31.1% occur below 100 keV, and essentially none below 0.625 eV - thus the classification as a 'fast' assembly. This assembly is Fast Reactor Benchmark No. 9 in the Cross Section Evaluation Working Group (CSEWG) Benchmark Specifications

  7. Silicide/Silicon Hetero-Junction Structure for Thermoelectric Applications.

    PubMed

    Jun, Dongsuk; Kim, Soojung; Choi, Wonchul; Kim, Junsoo; Zyung, Taehyoung; Jang, Moongyu

    2015-10-01

    We fabricated silicide/silicon hetero-junction structured thermoelectric device by CMOS process for the reduction of thermal conductivity with the scatterings of phonons at silicide/silicon interfaces. Electrical conductivities, Seebeck coefficients, power factors, and temperature differences are evaluated using the steady state analysis method. Platinum silicide/silicon multilayered structure showed an enhanced Seebeck coefficient and power factor characteristics, which was considered for p-leg element. Also, erbium silicide/silicon structure showed an enhanced Seebeck coefficient, which was considered for an n-leg element. Silicide/silicon multilayered structure is promising for thermoelectric applications by reducing thermal conductivity with an enhanced Seebeck coefficient. However, because of the high thermal conductivity of the silicon packing during thermal gradient is not a problem any temperature difference. Therefore, requires more testing and analysis in order to overcome this problem. Thermoelectric generators are devices that based on the Seebeck effect, convert temperature differences into electrical energy. Although thermoelectric phenomena have been used for heating and cooling applications quite extensively, it is only in recent years that interest has increased in energy generation.

  8. Valence Band Control of Metal Silicide Films via Stoichiometry.

    PubMed

    Streller, Frank; Qi, Yubo; Yang, Jing; Mangolini, Filippo; Rappe, Andrew M; Carpick, Robert W

    2016-07-01

    The unique electronic and mechanical properties of metal silicide films render them interesting for advanced materials in plasmonic devices, batteries, field-emitters, thermoelectric devices, transistors, and nanoelectromechanical switches. However, enabling their use requires precisely controlling their electronic structure. Using platinum silicide (PtxSi) as a model silicide, we demonstrate that the electronic structure of PtxSi thin films (1 ≤ x ≤ 3) can be tuned between metallic and semimetallic by changing the stoichiometry. Increasing the silicon content in PtxSi decreases the carrier density according to valence band X-ray photoelectron spectroscopy and theoretical density of states (DOS) calculations. Among all PtxSi phases, Pt3Si offers the highest DOS due to the modest shift of the Pt5d manifold away from the Fermi edge by only 0.5 eV compared to Pt, rendering it promising for applications. These results, demonstrating tunability of the electronic structure of thin metal silicide films, suggest that metal silicides can be designed to achieve application-specific electronic properties. PMID:27322019

  9. Epitaxial silicide formation on recoil-implanted substrates

    SciTech Connect

    Hashimoto, Shin; Egashira, Kyoko; Tanaka, Tomoya; Etoh, Ryuji; Hata, Yoshifumi; Tung, R. T.

    2005-01-15

    An epitaxy-on-recoil-implanted-substrate (ERIS) technique is presented. A disordered surface layer, generated by forward recoil implantation of {approx}0.7-3x10{sup 15} cm{sup -2} of oxygen during Ar plasma etching of surface oxide, is shown to facilitate the subsequent epitaxial growth of {approx}25-35-nm-thick CoSi{sub 2} layers on Si(100). The dependence of the epitaxial fraction of the silicide on the recoil-implantation parameters is studied in detail. A reduction in the silicide reaction rate due to recoil-implanted oxygen is shown to be responsible for the observed epitaxial formation, similar to mechanisms previously observed for interlayer-mediated growth techniques. Oxygen is found to remain inside the fully reacted CoSi{sub 2} layer, likely in the form of oxide precipitates. The presence of these oxide precipitates, with only a minor effect on the sheet resistance of the silicide layer, has a surprisingly beneficial effect on the thermal stability of the silicide layers. The agglomeration of ERIS-grown silicide layers on polycrystalline Si is significantly suppressed, likely from a reduced diffusivity due to oxygen in the grain boundaries. The implications of the present technique for the processing of deep submicron devices are discussed.

  10. Hafnium silicide formation on Si(100) upon annealing

    SciTech Connect

    Siervo, A. de; Fluechter, C. R.; Weier, D.; Schuermann, M.; Dreiner, S.; Westphal, C.; Carazzolle, M. F.; Pancotti, A.; Landers, R.; Kleiman, G. G.

    2006-08-15

    High dielectric constant materials, such as HfO{sub 2}, have been extensively studied as alternatives to SiO{sub 2} in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/SiO{sub 2}. The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction (XPD) analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase (HfSi{sub 2}), which starts to crystallize when the annealing temperature is higher than 550 deg. C.

  11. Valence Band Control of Metal Silicide Films via Stoichiometry.

    PubMed

    Streller, Frank; Qi, Yubo; Yang, Jing; Mangolini, Filippo; Rappe, Andrew M; Carpick, Robert W

    2016-07-01

    The unique electronic and mechanical properties of metal silicide films render them interesting for advanced materials in plasmonic devices, batteries, field-emitters, thermoelectric devices, transistors, and nanoelectromechanical switches. However, enabling their use requires precisely controlling their electronic structure. Using platinum silicide (PtxSi) as a model silicide, we demonstrate that the electronic structure of PtxSi thin films (1 ≤ x ≤ 3) can be tuned between metallic and semimetallic by changing the stoichiometry. Increasing the silicon content in PtxSi decreases the carrier density according to valence band X-ray photoelectron spectroscopy and theoretical density of states (DOS) calculations. Among all PtxSi phases, Pt3Si offers the highest DOS due to the modest shift of the Pt5d manifold away from the Fermi edge by only 0.5 eV compared to Pt, rendering it promising for applications. These results, demonstrating tunability of the electronic structure of thin metal silicide films, suggest that metal silicides can be designed to achieve application-specific electronic properties.

  12. Anomalous frequency dependent diamagnetism in metal silicide

    NASA Astrophysics Data System (ADS)

    Dahal, Ashutosh; Gunasekera, Jagat; Harriger, Leland; Singh, David J.; Singh, Deepak K.; Leland Harriger Collaboration

    Discovery of superconductivity in PbO-type FeSe has generated a lot of interest. Among the samples we synthesize with similar structure, NiSi has showed anomalous but very interesting results. Nickel silicides are important electronic materials that have been used as contacts for field effect transistors, as interconnects and in nanoelectronic devices. The magnetic properties of NiSi are not well known, however. In this presentation, we report a highly unusual magnetic phenomenon in NiSi. The ac susceptibility measurements on NiSi reveal strong frequency dependence of static and dynamic susceptibilities that are primarily diamagnetic at room temperature. The static susceptibility is found to exhibit a strong frequency dependence of the diamagnetic response below 100K, while dynamic susceptibility showed peak type feature at 10KHz frequency around 50K. Detailed neutron scattering measurements on high quality powder sample of NiSi on SPINS cold spectrometer further revealed an inelastic peak around 1.5meV, even though no magnetic order is detected. The inelastic peak dissipates above 100K, which is where the static susceptibility starts to diverge with frequency. Research is supported by U.S. Department of Energy, Office of Basic Energy Sciences under Grant No. DE-SC0014461.

  13. Thermoelectric Properties of Higher Manganese Silicide Nanowires

    NASA Astrophysics Data System (ADS)

    Moore, Arden; Higgins, Jeremy; Zhou, Feng; Jin, Song; Shi, Li

    2009-03-01

    Higher manganese silicides (HMS) have a relatively high thermoelectric figure of merit (ZT) of about 0.7. HMS nanowires have been synthesized using a chemical vapor deposition method. In this work, the thermoelectric properties of individual HMS nanowires are measured and analyzed to determine the role of size effects on electron and phonon transport as well as potential ZT enhancement. Measurements of Seebeck coefficient, electrical conductivity, and thermal conductivity were performed using both suspended and substrate-based microdevices. Results show that the Seebeck coefficient of two as-synthesized 60 nm diameter nanowires between 300-400K is about 25-50% lower than that of single crystal bulk parallel to the c-axis, while the electrical conductivity values are about 25% lower than bulk single crystal in the same direction. The thermal conductivity of one 60 nm diameter nanowire at room temperature was found to be four times smaller than the bulk value along the c-axis. The large reduction in thermal conductivity and small to moderate impact on electrical transport may lead to HMS nanowires with enhanced ZT.

  14. Environmental site description for a Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) production plant at the Oak Ridge Gaseous Diffusion Plant Site

    SciTech Connect

    Not Available

    1991-09-01

    In January 1990, the Secretary of Energy approved a plan for the demonstration and deployment of the Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) technology, with the near-term goal to provide the necessary information to make a deployment decision by November 1992. The U-AVLIS process is based on electrostatic extraction of photoionized U-235 atoms from an atomic vapor stream created by electron-beam vaporization of uranium metal alloy. A programmatic document for use in screening DOE sites to locate the U-AVLIS production plant was developed and implemented in two parts (Wolsko et al. 1991). The first part consisted of a series of screening analyses, based on exclusionary and other criteria, that identified a reasonable number of candidate sites. These sites were then subjected to a more rigorous and detailed comparative analysis for the purpose of developing a short list of reasonable alternative sites for later environmental examination. This environmental site description (ESD) provides a detailed description of the ORGDP site and vicinity suitable for use in an environmental impact statement (EIS). The report is based on existing literature, data collected at the site, and information collected by Argonne National Laboratory (ANL) staff during a site visit. The organization of the ESD is as follows. Topics addressed in Sec. 2 include a general site description and the disciplines of geology, water resources, biotic resources, air resources, noise, cultural resources, land use, socioeconomics, and waste management. Identification of any additional data that would be required for an EIS is presented in Sec. 3. Following the site description and additional data requirements, Sec. 4 provides a short, qualitative assessment of potential environmental issues. 37 refs., 20 figs., 18 tabs.

  15. Formation of cobalt silicide by ion beam mixing

    NASA Astrophysics Data System (ADS)

    Min, Ye; Burte, Edmund P.; Ryssel, Heiner

    1991-07-01

    The formation of cobalt silicides by arsenic ion implantation through a cobalt film which causes a mixing of the metal with the silicon substrate was investigated. Furthermore, cobalt suicides were formed by rapid thermal annealing (RTA). Sheet resistance and silicide phases of implanted Co/Si samples depend on the As dose. Ion beam mixing at doses higher than 5 × 10 15 cm -2 and RTA at temperatures T ⩾ 900° C result in almost equal values of Rs. RBS and XRD spectra of these samples illustrate the formation of a homogeneous CoSi 2 layer. Significant lateral growth of cobalt silicide beyond the edge of patterned SiO 2 was observed in samples which were only subjected to an RTA process ( T ⩾ 900 ° C), while this lateral suicide growth could be reduced efficiently by As implantation prior to RTA.

  16. Si-Ge Nano-Structured with Tungsten Silicide Inclusions

    NASA Technical Reports Server (NTRS)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

  17. Americium, plutonium and uranium contamination and speciation in well waters, streams and atomic lakes in the Sarzhal region of the Semipalatinsk Nuclear Test Site, Kazakhstan.

    PubMed

    León Vintró, L; Mitchell, P I; Omarova, A; Burkitbayev, M; Jiménez Nápoles, H; Priest, N D

    2009-04-01

    New data are reported on the concentrations, isotopic composition and speciation of americium, plutonium and uranium in surface and ground waters in the Sarzhal region of the Semipalatinsk Test Site, and an adjacent area including the settlement of Sarzhal. The data relate to filtered water and suspended particulate from (a) streams originating in the Degelen Mountains, (b) the Tel'kem 1 and Tel'kem 2 atomic craters, and (c) wells on farms located within the study area and at Sarzhal. The measurements show that (241)Am, (239,240)Pu and (238)U concentrations in well waters within the study area are in the range 0.04-87mBq dm(-3), 0.7-99mBq dm(-3), and 74-213mBq dm(-3), respectively, and for (241)Am and (239,240)Pu are elevated above the levels expected solely on the basis of global fallout. Concentrations in streams sourced in the Degelen Mountains are similar, while concentrations in the two water-filled atomic craters are somewhat higher. Suspended particulate concentrations in well waters vary considerably, though median values are very low, at 0.01mBq dm(-3), 0.08mBq dm(-3) and 0.32mBq dm(-3) for (241)Am, (239,240)Pu and (238)U, respectively. The (235)U/(238)U isotopic ratio in almost all well and stream waters is slightly elevated above the 'best estimate' value for natural uranium worldwide, suggesting that some of the uranium in these waters is of test-site provenance. Redox analysis shows that on average most of the plutonium present in the microfiltered fraction of these waters is in a chemically reduced form (mean 69%; 95% confidence interval 53-85%). In the case of the atomic craters, the proportion is even higher. As expected, all of the americium present appears to be in a reduced form. Calculations suggest that annual committed effective doses to individual adults arising from the daily ingestion of these well waters are in the range 11-42microSv (mean 21microSv). Presently, the ground water feeding these wells would not appear to be contaminated with

  18. Facile Preparation of a Platinum Silicide Nanoparticle-Modified Tip Apex for Scanning Kelvin Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Lin, Chun-Ting; Chen, Yu-Wei; Su, James; Wu, Chien-Ting; Hsiao, Chien-Nan; Shiao, Ming-Hua; Chang, Mao-Nan

    2015-10-01

    In this study, we propose an ultra-facile approach to prepare a platinum silicide nanoparticle-modified tip apex (PSM tip) used for scanning Kelvin probe microscopy (SKPM). We combined a localized fluoride-assisted galvanic replacement reaction (LFAGRR) and atmospheric microwave annealing (AMA) to deposit a single platinum silicide nanoparticle with a diameter of 32 nm on the apex of a bare silicon tip of atomic force microscopy (AFM). The total process was completed in an ambient environment in less than 3 min. The improved potential resolution in the SKPM measurement was verified. Moreover, the resolution of the topography is comparable to that of a bare silicon tip. In addition, the negative charges found on the PSM tips suggest the possibility of exploring the use of current PSM tips to sense electric fields more precisely. The ultra-fast and cost-effective preparation of the PSM tips provides a new direction for the preparation of functional tips for scanning probe microscopy.

  19. Environmental site description for a Uranium Atomic Vapor Laser Isotope Separation (U-AVLIS) production plant at the Portsmouth Gaseous Diffusion Plant site

    SciTech Connect

    Marmer, G.J.; Dunn, C.P.; Filley, T.H.; Moeller, K.L.; Pfingston, J.M.; Policastro, A.J.; Cleland, J.H.

    1991-09-01

    Uranium enrichment in the United States has utilized a diffusion process to preferentially enrich the U-235 isotope in the uranium product. In the 1970s, the US Department of Energy (DOE) began investigating more efficient and cost-effective enrichment technologies. In January 1990, the Secretary of Energy approved a plan for the demonstration and deployment of the Uranium Atomic Vapor Laser isotope Separation (U-AVLIS) technology with the near-term goal to provide the necessary information to make a deployment decision by November 1992. Initial facility operation is anticipated for 1999. A programmatic document for use in screening DOE sites to locate a U-AVLIS production plant was developed and implemented in two parts. The first part consisted of a series of screening analyses, based on exclusionary and other criteria, that identified a reasonable number of candidate sites. The final evaluation, which included sensitivity studies, identified the Oak Ridge Gaseous Diffusion Plant (ORGDP) site, the Paducah Gaseous Diffusion Plant (PGDP) site, and the Portsmouth Gaseous Diffusion Plant (PORTS) site as having significant advantages over the other sites considered. This environmental site description (ESD) provides a detailed description of the PORTS site and vicinity suitable for use in an environmental impact statement (EIS). This report is based on existing literature, data collected at the site, and information collected by Argonne National Laboratory (ANL) staff during site visits. The organization of the ESD is as follows. Topics addressed in Sec. 2 include a general site description and the disciplines of geology, water resources, biotic resources, air resources, noise, cultural resources, land use. Socioeconomics, and waste management. Identification of any additional data that would be required for an EIS is presented in Sec. 3.

  20. ZPR-3 Assembly 11 : A cylindrical sssembly of highly enriched uranium and depleted uranium with an average {sup 235}U enrichment of 12 atom % and a depleted uranium reflector.

    SciTech Connect

    Lell, R. M.; McKnight, R. D.; Tsiboulia, A.; Rozhikhin, Y.; National Security; Inst. of Physics and Power Engineering

    2010-09-30

    Over a period of 30 years, more than a hundred Zero Power Reactor (ZPR) critical assemblies were constructed at Argonne National Laboratory. The ZPR facilities, ZPR-3, ZPR-6, ZPR-9 and ZPPR, were all fast critical assembly facilities. The ZPR critical assemblies were constructed to support fast reactor development, but data from some of these assemblies are also well suited for nuclear data validation and to form the basis for criticality safety benchmarks. A number of the Argonne ZPR/ZPPR critical assemblies have been evaluated as ICSBEP and IRPhEP benchmarks. Of the three classes of ZPR assemblies, engineering mockups, engineering benchmarks and physics benchmarks, the last group tends to be most useful for criticality safety. Because physics benchmarks were designed to test fast reactor physics data and methods, they were as simple as possible in geometry and composition. The principal fissile species was {sup 235}U or {sup 239}Pu. Fuel enrichments ranged from 9% to 95%. Often there were only one or two main core diluent materials, such as aluminum, graphite, iron, sodium or stainless steel. The cores were reflected (and insulated from room return effects) by one or two layers of materials such as depleted uranium, lead or stainless steel. Despite their more complex nature, a small number of assemblies from the other two classes would make useful criticality safety benchmarks because they have features related to criticality safety issues, such as reflection by soil-like material. ZPR-3 Assembly 11 (ZPR-3/11) was designed as a fast reactor physics benchmark experiment with an average core {sup 235}U enrichment of approximately 12 at.% and a depleted uranium reflector. Approximately 79.7% of the total fissions in this assembly occur above 100 keV, approximately 20.3% occur below 100 keV, and essentially none below 0.625 eV - thus the classification as a 'fast' assembly. This assembly is Fast Reactor Benchmark No. 8 in the Cross Section Evaluation Working Group

  1. Deposition of aluminide and silicide based protective coatings on niobium

    NASA Astrophysics Data System (ADS)

    Majumdar, S.; Arya, A.; Sharma, I. G.; Suri, A. K.; Banerjee, S.

    2010-11-01

    We compare aluminide and alumino-silicide composite coatings on niobium using halide activated pack cementation (HAPC) technique for improving its oxidation resistance. The coated samples are characterized by SEM, EDS, EPMA and hardness measurements. We observe formation of NbAl3 in aluminide coating of Nb, though the alumino-silicide coating leads to formation primarily of NbSi2 in the inner layer and a ternary compound of Nb-Si-Al in the outer layer, as reported earlier (Majumdar et al. [11]). Formation of niobium silicide is preferred over niobium aluminide during alumino-silicide coating experiments, indicating Si is more strongly bonded to Nb than Al, although equivalent quantities of aluminium and silicon powders were used in the pack chemistry. We also employ first-principles density functional pseudopotential-based calculations to calculate the relative stability of these intermediate phases and the adhesion strength of the Al/Nb and Si/Nb interfaces. NbSi2 exhibits much stronger covalent character as compared to NbAl3. The ideal work of adhesion for the relaxed Al/Nb and Si/Nb interfaces are calculated to be 3226 mJ/m2 and 3545 mJ/m2, respectively, indicating stronger Nb-Si bonding across the interface.

  2. Texture in thin film silicides and germanides: A review

    NASA Astrophysics Data System (ADS)

    De Schutter, B.; De Keyser, K.; Lavoie, C.; Detavernier, C.

    2016-09-01

    Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi2, C54-TiSi2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si1-xGex in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

  3. Study of nickel silicide formation by physical vapor deposition techniques

    NASA Astrophysics Data System (ADS)

    Pancharatnam, Shanti

    Metal silicides are used as contacts to the highly n-doped emitter in photovoltaic devices. Thin films of nickel silicide (NiSi) are of particular interest for Si-based solar cells, as they form at lower temperature and consume less silicon. However, interfacial oxide limits the reduction in sheet resistance. Hence, different diffusion barriers were investigated with regard to optimizing the conductivity and thermal stability. The formation of NiSi, and if it can be doped to have good contact with the n-side of a p-n junction were studied. Reduction of the interfacial oxide by the interfacial Ti layer to allow the formation of NiSi was observed. Silicon was treated in dilute hydrofluoric acid for removing the surface oxide layer. Ni and a Ti diffusion barrier were deposited on Si by physical vapor deposition (PVD) methods - electron beam evaporation and sputtering. The annealing temperature and time were varied to observe the stability of the deposited film. The films were then etched to observe the retention of the silicide. Characterization was done using scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and Rutherford back scattering (RBS). Sheet resistance was measured using the four-point probe technique. Annealing temperatures from 300°C showed films began to agglomerate indicating some diffusion between Ni and Si in the Ti layer, also supported by the compositional analysis in the Auger spectra. Films obtained by evaporation and sputtering were of high quality in terms of coverage over substrate area and uniformity. Thicknesses of Ni and Ti were optimized to 20 nm and 10 nm respectively. Resistivity was low at these thicknesses, and reduced by about half post annealing at 300°C for 8 hours. Thus a low resistivity contact was obtained at optimized thicknesses of the metal layers. It was also shown that some silicide formation occurs at temperatures starting from 300°C and can thus be used to make good silicide contacts.

  4. Atomic Fuel, Understanding the Atom Series. Revised.

    ERIC Educational Resources Information Center

    Hogerton, John F.

    This publication is part of the "Understanding the Atom" series. Complete sets of the series are available free to teachers, schools, and public librarians who can make them available for reference or use by groups. Among the topics discussed are: What Atomic Fuel Is; The Odyssey of Uranium; Production of Uranium; Fabrication of Reactor Fuel…

  5. Uranium triamidoamine chemistry.

    PubMed

    Gardner, Benedict M; Liddle, Stephen T

    2015-07-01

    Triamidoamine (Tren) complexes of the p- and d-block elements have been well-studied, and they display a diverse array of chemistry of academic, industrial and biological significance. Such in-depth investigations are not as widespread for Tren complexes of uranium, despite the general drive to better understand the chemical behaviour of uranium by virtue of its fundamental position within the nuclear sector. However, the chemistry of Tren-uranium complexes is characterised by the ability to stabilise otherwise reactive, multiply bonded main group donor atom ligands, construct uranium-metal bonds, promote small molecule activation, and support single molecule magnetism, all of which exploit the steric, electronic, thermodynamic and kinetic features of the Tren ligand system. This Feature Article presents a current account of the chemistry of Tren-uranium complexes.

  6. Evolution of the atomic order and valence state of rare-earth atoms and uranium in a new carbon-metal composite—diphthalocyanine pyrolysate C64H32N16 Me ( Me = Y, La, Ce, Eu, and U)

    NASA Astrophysics Data System (ADS)

    Sovestnov, A. E.; Kapustin, V. K.; Tikhonov, V. I.; Fomin, E. V.; Chernenkov, Yu. P.

    2014-08-01

    The structure of a metal-carbon composite formed by the pyrolysis of diphthalocyanine of some rare-earth elements (Y, La, Ce, Eu) and uranium in the temperature range T ann = 800-1700°C has been investigated for the first time by the methods of X-ray diffraction analysis and X-ray line shift. It has been shown that, in the general case, the studied pyrolysates consist of three phases. One phase corresponds to the structure of graphite. The second phase corresponds to nitrides, carbides, and oxides of basic metal elements with a crystallite size ranging from 5 to 100 nm. The third phase is amorphous or consisting of crystallites with a size of ˜1 nm. It has been found that all the basic elements (Y, La, Ce, Eu, U) and incorporated iodine atoms in the third phase are in a chemically bound state. The previously unobserved electronic configurations have been revealed for europium. The possibility of including not only atoms of elements forming diphthalocyanine but also other elements (for example, iodine) in the composite structure is of interest, in particular, for the creation of a thermally, chemically, and radiation resistant metal-carbon matrix for the radioactive waste storage.

  7. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    NASA Astrophysics Data System (ADS)

    Ozcan, Ahmet S.; Lavoie, Christian; Alptekin, Emre; Jordan-Sweet, Jean; Zhu, Frank; Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M.

    2016-04-01

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  8. Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

    PubMed

    Savelli, Guillaume; Stein, Sergio Silveira; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent; Dilhaire, Stefan; Pernot, Gilles

    2015-07-10

    Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields. PMID:26086207

  9. Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts

    NASA Astrophysics Data System (ADS)

    Alberti, Alessandra; Roccaforte, Fabrizio; Libertino, Sebania; Bongiorno, Corrado; La Magna, Antonino

    2011-11-01

    Ni-silicide/silicon Schottky contacts have been realised by promoting low-temperature Ni-Si interdiffusion during deposition (˜50 °C) and reaction (450 °C) on an oxygen-free [001] silicon surface. A 14 nm transrotational NiSi layer was produced made of extremely flat pseudo-epitaxial domains (˜200 nm in diameter). The current-voltage (I-V) characteristics (340-80 K) have indicated the presence of structural inhomogeneities which lower the Schottky barrier by Δ≈0.1 eV. They have been associated with the core regions of the trans-domains (wherein the silicide lattice is epitaxially aligned to that of Si) since their density (˜2.5×109 cm-2) and dimension (˜10 nm) fit the I-V curves vs temperature following the Tung's approach.

  10. Oxidation behavior of molybdenum silicides and their composites

    SciTech Connect

    Natesan, K.; Deevi, S. C.

    2000-04-03

    A key materials issue associated with the future of high-temperature structural silicides is the resistance of these materials to oxidation at low temperatures. Oxidation tests were conducted on Mo-based silicides over a wide temperature range to evaluate the effects of alloy composition and temperature on the protective scaling characteristics and testing regime for the materials. The study included Mo{sub 5}Si{sub 3} alloys that contained several concentrations of B. In addition, oxidation characteristics of MoSi{sub 2}-Si{sub 3}N{sub 4} composites that contained 20--80 vol.% Si{sub 3}N{sub 4} were evaluated at 500--1,400 C.

  11. Infrared and Raman characterization of beta iron silicide

    NASA Astrophysics Data System (ADS)

    Lefki, K.; Muret, P.; Bustarret, E.; Boutarek, N.; Madar, R.; Chevrier, J.; Derrien, J.; Brunel, M.

    1991-12-01

    Samples of beta-iron silicide were prepared by three different methods : solid phase reaction on silicon (111), on a monocrystaline FeSi substrate, and from the melt. These samples have been characterized by x-ray diffraction and investigated by Infrared and Raman spectroscopies. The infrared and Raman lines are compared with theoretical predictions given by the factor group analysis of the silicide primitive cell, which yields the number and the symmetry of the different modes. We relate the red shift of the Infrared and Raman lines on samples with smaller lattice parameters to the presence of Iron vacancies in films deposited on silicon, in agreement with the sign of the thermoelectric power.

  12. Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

    PubMed

    Savelli, Guillaume; Stein, Sergio Silveira; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent; Dilhaire, Stefan; Pernot, Gilles

    2015-07-10

    Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields.

  13. Characteristics of a promising new thermoelectric material - Ruthenium silicide

    NASA Technical Reports Server (NTRS)

    Ohta, Toshitaka; Vining, Cronin B.; Allevato, Camillo E.

    1991-01-01

    A preliminary study on arc-melted samples has indicated that ruthenium silicide has the potential to obtain figure-of-merit values four times higher than that of conventional silicon-germanium material. In order to realize the high figure-of-merit values, high-quality crystal from the melt is needed. A Bridgman-like method has been employed and has realized much better crystals than arc-melted ones.

  14. Processing, Microstructure, and Properties of Multiphase Mo Silicide Alloys

    SciTech Connect

    Heatherly, L.; Liu, C.T.; Schneibel, J.H.

    1998-11-30

    Multiphase Mo silicide alloys containing T2 (Mo{sub 5}SiB{sub 2}), Mo{sub 3}Si and Mo phases where prepared by both melting and casting (M and C) and powder metallurgical (PM) processes. Glassy phases are observed in PM materials but not in M and C materials. Microstructural studies indicate that the primary phase is Mo-rich solid solution in alloys containing {le}(9.4Si+13.8B, at. %) and T2 in alloys with {ge}(9.8Si+14.6B). An eutectic composition is estimated to be close to Mo-9.6Si-14.2B. The mechanical properties of multiphase silicide alloys were determined by hardness, tensile and bending tests at room temperature. The multiphase alloy MSB-18 (Mo-9.4Si-13.8B) possesses a flexure strength distinctly higher than that of MoSi{sub 2} and other Mo{sub 5}Si{sub 3} silicide alloys containing no Mo particles. Also, MSB-18 is tougher than MoSi{sub 2} by a factor of 4.

  15. Increasing the heat resistance of vanadium by siliciding

    SciTech Connect

    Lyutyi, E.M.; Tsvikilevich, O.S.; Shirokov, V.V.; Stepanishin, V.I.

    1988-01-01

    The purpose of this article was to evaluate the influence of modifier metals on the protective properties of silicide coatings in heating of vanadium in air and also on the mechanical properties of type VnM-2 unalloyed vanadium and VTsU alloy. Coatings were produced by diffusion impregnation from molten sodium with silicon or silicides of the modifying elements. The silicides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, chromium, tungsten, rhenium, and nickel were investigated using x-ray spectrometric and hardness investigations and x-ray diffractometric analysis. The protective properties of the coatings were determined from the relative change in weight of the samples with and without coatings during isothermal oxidation in air at 1073/sup 0/K and also by differential thermal analysis. The influence of the coating on the mechanical properties of the material was also investigated using a borosilicide coating. High-temperature vacuum annealing was assessed as a method for restoring the plastic properties and relieving the stresses of vanadium and VTsU alloy subsequent to coating.

  16. Formation of Cobalt Silicide Films by Ion Beam Deposition

    SciTech Connect

    Zhang, Yanwen; McCready, David E.; Wang, Chong M.; Young, James S.; Mckinley, Mathew I.; Whitlow, Harry J.; Razpet, Alenka; Possnert, Göran; Zhang, Tonghe; Wu, Yuguang

    2006-01-01

    Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si (111) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700 C for 30 minutes. Cobalt depth profiles and contaminations were determined using Rutherford backscattering spectrometry (RBS) and time-of-flight energy elastic recoil detection analysis (ToF-E ERDA). The polycrystalline cobalt silicide phases formed were characterized by grazing-incidence x-ray diffraction (GIXRD). The surface topography development and interfaces have been investigated by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700 C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.

  17. In Situ Study of the Formation of Silicide Phases in Amorphous Co–Si Mixed Layers

    SciTech Connect

    Van Bockstael, C.; De Keyser, K; Demeulemeester, J; Vantomme, A; Van Meirhaeghe, R; Detavernier, C; Jordan-Sweet, J; Lavoie, C

    2010-01-01

    We investigate Co silicide phase formation when extra Si is added within an as deposited 50 nm Co film. The addition of Si is investigated for both the Co/SiO{sub 2} and Co/Si(1 0 0) system. A series of 10 Co-Si mixed films with a Si content varying from 21 to 59 at.% was prepared and investigated during annealing with in situ X-ray diffraction. The oxide system is used as reference system to identify phases that initially crystallize in an amorphous mixture of a given composition. Multiple phases can nucleate, and the temperature of crystallization depends on the Co-Si atomic ratio. Upon heating of the Co(Si)/Si system, the first reaction is a similar crystallization reaction of the Co(Si) mixture. Once the first phase is formed, one has the normal system of a silicide phase in contact with an unlimited amount of Si from the substrate, and the sequential phase formation towards CoSi{sub 2} is established. For deposited layers of composition ranging from 48%Si to 52%Si, the CoSi is the first phase to form and increasing the amount of Si leads to a remarkable improvement of the thermal stability of CoSi on Si(1 0 0). CoSi{sub 2} nucleation was extensively delayed by 150 C compared to the reaction observed from a pure Co film on Si(1 0 0). Electron backscatter diffraction measurements reveal that in this range, the gradual Si increase systematically leads to bigger CoSi grains (up to 20 {micro}m). This shows that the grain size of the CoSi precursor strongly affects the nucleation of the following CoSi{sub 2} phase. Laser-light scattering measurements suggest that adding more than 42%Si reduces the roughness of the CoSi{sub 2} layer.

  18. Nickel-affected silicon crystallization and silicidation on polyimide by multipulse excimer laser annealing

    SciTech Connect

    Alberti, A.; La Magna, A.; Spinella, C.; Privitera, V.; Cuscuna, M.; Fortunato, G.

    2010-12-15

    Nickel enhanced amorphous Si crystallization and silicidation on polyimide were studied during multipulse excimer laser annealing (ELA) from submelting to melting conditions. A {approx}8 nm thick Ni film was deposited on a 100 nm thick {alpha}-Si layer at {approx}70 deg. C in order to promote partial nickel diffusion into silicon. In the submelting regime, Ni atoms distributed during deposition in {alpha}-Si and the thermal gradient due to the presence of the plastic substrate were crucial to induce low fluence ({>=}0.08 J/cm{sup 2}) Si crystallization to a depth which is strictly related to the starting Ni profile. {Alpha}morphous-Si crystallization is not expected on pure Si at those low fluences. Additional pulses at higher fluences do not modify the double poly-Si/{alpha}-Si structure until melting conditions are reached. At a threshold of {approx}0.2 J/cm{sup 2}, melting was induced simultaneously in the polycrystalline layer as well as in the residual {alpha}-Si due to a thermal gradient of {approx}200 deg. C. Further increasing the laser fluence causes the poly-Si layer to be progressively melted to a depth which is proportional to the energy density used. As a consequence of the complete Si melting, columnar poly-Si grains are formed above 0.3 J/cm{sup 2}. For all fluences, a continuous NiSi{sub 2} layer is formed at the surface which fills the large Si grain boundaries, with the beneficial effect of flattening the poly-Si surface. The results would open the perspective of integrating Ni-silicide layers as metallic contacts on Si during {alpha}-Si-crystallization by ELA on plastic substrate.

  19. Status of core conversion with LEU silicide fuel in JRR-4

    SciTech Connect

    Nakajima, Teruo; Ohnishi, Nobuaki; Shirai, Eiji

    1997-08-01

    Japan Research Reactor No.4 (JRR-4) is a light water moderated and cooled, 93% enriched uranium ETR-type fuel used and swimming pool type reactor with thermal output of 3.5MW. Since the first criticality was achieved on January 28, 1965, JRR-4 has been used for shielding experiments, radioisotope production, neutron activation analyses, training for reactor engineers and so on for about 30 years. Within the framework of the RERTR Program, the works for conversion to LEU fuel are now under way, and neutronic and thermal-hydraulic calculations emphasizing on safety and performance aspects are being carried out. The design and evaluation for the core conversion are based on the Guides for Safety Design and Evaluation of research and testing reactor facilities in Japan. These results show that the JRR-4 will be able to convert to use LEU fuel without any major design change of core and size of fuel element. LEU silicide fuel (19.75%) will be used and maximum neutron flux in irradiation hole would be slightly decreased from present neutron flux value of 7x10{sup 13}(n/cm{sup 2}/s). The conversion works are scheduled to complete in 1998, including with upgrade of the reactor building and utilization facilities.

  20. The whole-core LEU silicide fuel demonstration in the JMTR

    SciTech Connect

    Aso, Tomokazu; Akashi, Kazutomo; Nagao, Yoshiharu

    1997-08-01

    The JMTR was fully converted to LEU silicide (U{sub 3}Si{sub 2}) fuel with cadmium wires as burnable absorber in January, 1994. The reduced enrichment program for the JMTR was initiated in 1979, and the conversion to MEU (enrichment ; 45%) aluminide fuel was carried out in 1986 as the first step of the program. The final goal of the program was terminated by the present LEU conversion. This paper describes the results of core physics measurement through the conversion phase from MEU fuel core to LEU fuel core. Measured excess reactivities of the LEU fuel cores are mostly in good agreement with predicted values. Reactivity effect and burnup of cadmium wires, therefore, were proved to be well predicted. Control rod worth in the LEU fuel core is mostly less than that in the MEU fuel core. Shutdown margin was verified to be within the safety limit. There is no significant difference in temperature coefficient of reactivity between the MEU and LEU fuel cores. These results verified that the JMTR was successfully and safely converted to LEU fuel. Extension of the operating cycle period was achieved and reduction of spend fuel elements is expected by using the fuel with high uranium density.

  1. Experimental studies of thermal and chemical interactions between oxide and silicide nuclear fuels with water

    SciTech Connect

    farahani, A.A.; Corradini, M.L.

    1995-09-01

    Given some transient power/cooling mismatch is a nuclear reactor and its inability to establish the necessary core cooling, energetic fuel-coolant interactions (FCI`s commonly called `vapor explosions`) could occur as a result of the core melting and coolant contact. Although a large number of studies have been done on energetic FCI`s, very few experiments have been performed with the actual fuel materials postulated to be produced in severe accidents. Because of the scarcity of well-characterized FCI data for uranium allows in noncommercial reactors (cermet and silicide fuels), we have conducted a series of experiments to provide a data base for the foregoing materials. An existing 1-D shock-tube facility was modified to handle depleted radioactive materials (U{sub 3}O{sub 8}-Al, and U{sub 3}Si{sub 2}-Al). Our objectives have been to determine the effects of the initial fuel composition and temperature and the driving pressure (triggering) on the explosion work output, dynamic pressures, transient temperatures, and the hydrogen production. Experimental results indicate limited energetics, mainly thermal interactions, for these fuel materials as compared to aluminum where more chemical reactions occur between the molten aluminum and water.

  2. SOLVENT EXTRACTION OF URANIUM VALUES

    DOEpatents

    Feder, H.M.; Ader, M.; Ross, L.E.

    1959-02-01

    A process is presented for extracting uranium salt from aqueous acidic solutions by organic solvent extraction. It consists in contacting the uranium bearing solution with a water immiscible dialkylacetamide having at least 8 carbon atoms in the molecule. Mentioned as a preferred extractant is dibutylacetamide. The organic solvent is usually used with a diluent such as kerosene or CCl/sub 4/.

  3. Reaction of Laser-Ablated Uranium and Thorium Atoms with H2Se: A Rare Example of Selenium Multiple Bonding.

    PubMed

    Vent-Schmidt, Thomas; Andrews, Lester; Thanthiriwatte, K Sahan; Dixon, David A; Riedel, Sebastian

    2015-10-19

    The compounds H2ThSe and H2USe were synthesized by the reaction of laser-ablated actinide metal atoms with H2Se under cryogenic conditions following the procedures used to synthesize H2AnX (An = Th, U; X = O, S). The molecules were characterized by infrared spectra in an argon matrix with the aid of deuterium substitution and electronic structure calculations at the density functional theory level. The main products, H2ThSe and H2USe, are shown to have a highly polarized actinide-selenium triple bond, as found for H2AnS on the basis of electronic structure calculations. There is an even larger back-bonding of the Se with the An than found for the corresponding sulfur compounds. These molecules are of special interest as rare examples of multiple bonding of selenium to a metal, particularly an actinide metal. PMID:26418218

  4. Reaction of Laser-Ablated Uranium and Thorium Atoms with H2Se: A Rare Example of Selenium Multiple Bonding.

    PubMed

    Vent-Schmidt, Thomas; Andrews, Lester; Thanthiriwatte, K Sahan; Dixon, David A; Riedel, Sebastian

    2015-10-19

    The compounds H2ThSe and H2USe were synthesized by the reaction of laser-ablated actinide metal atoms with H2Se under cryogenic conditions following the procedures used to synthesize H2AnX (An = Th, U; X = O, S). The molecules were characterized by infrared spectra in an argon matrix with the aid of deuterium substitution and electronic structure calculations at the density functional theory level. The main products, H2ThSe and H2USe, are shown to have a highly polarized actinide-selenium triple bond, as found for H2AnS on the basis of electronic structure calculations. There is an even larger back-bonding of the Se with the An than found for the corresponding sulfur compounds. These molecules are of special interest as rare examples of multiple bonding of selenium to a metal, particularly an actinide metal.

  5. Columnar and subsurface silicide growth with novel molecular beam epitaxy techniques

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; George, T.; Pike, W. T.

    1992-01-01

    We have found novel growth modes for epitaxial CoSi2 at high temperatures coupled with Si-rich flux ratios or low deposition rates. In the first of these modes, codeposition of metal and Si at 600-800 C with excess Si leads to the formation of epitaxial silicide columns surrounded by single-crystal Si. During the initial stages of the deposition, the excess Si grows homoepitaxially in between the silicide, which forms islands, so that the lateral growth of the islands is confined. Once a template layer is established by this process, columns of silicide form as a result of selective epitaxy of silicide on silicide and Si on Si. This growth process allows nanometer control over silicide particles in three dimensions. In the second of these modes, a columnar silicide seed layer is used as a template to nucleate subsurface growth of CoSi2. With a 100 nm Si layer covering CoSi2 seeds, Co deposited at 800C and 0.01 nm/s diffuses down to grow on the buried seeds rather than nucleating surface silicide islands. For thicker Si caps or higher deposition rates, the surface concentration of Co exceeds the critical concentration for nucleation of islands, preventing this subsurface growth mode from occurring. Using this technique, single-crystal layers of CoSi2 buried under single-crystal Si caps have been grown.

  6. Defect-free erbium silicide formation using an ultrathin Ni interlayer.

    PubMed

    Choi, Juyun; Choi, Seongheum; Kang, Yu-Seon; Na, Sekwon; Lee, Hoo-Jeong; Cho, Mann-Ho; Kim, Hyoungsub

    2014-08-27

    An ultrathin Ni interlayer (∼1 nm) was introduced between a TaN-capped Er film and a Si substrate to prevent the formation of surface defects during thermal Er silicidation. A nickel silicide interfacial layer formed at low temperatures and incurred uniform nucleation and the growth of a subsequently formed erbium silicide film, effectively inhibiting the generation of recessed-type surface defects and improving the surface roughness. As a side effect, the complete transformation of Er to erbium silicide was somewhat delayed, and the electrical contact property at low annealing temperatures was dominated by the nickel silicide phase with a high Schottky barrier height. After high-temperature annealing, the early-formed interfacial layer interacted with the growing erbium silicide, presumably forming an erbium silicide-rich Er-Si-Ni mixture. As a result, the electrical contact property reverted to that of the low-resistive erbium silicide/Si contact case, which warrants a promising source/drain contact application for future high-performance metal-oxide-semiconductor field-effect transistors.

  7. Formation of low resistivity titanium silicide gates in semiconductor integrated circuits

    DOEpatents

    Ishida, Emi

    1999-08-10

    A method of forming a titanium silicide (69) includes the steps of forming a transistor having a source region (58), a drain region (60) and a gate structure (56) and forming a titanium layer (66) over the transistor. A first anneal is performed with a laser anneal at an energy level that causes the titanium layer (66) to react with the gate structure (56) to form a high resistivity titanium silicide phase (68) having substantially small grain sizes. The unreacted portions of the titanium layer (66) are removed and a second anneal is performed, thereby causing the high resistivity titanium silicide phase (68) to convert to a low resistivity titanium silicide phase (69). The small grain sizes obtained by the first anneal allow low resistivity titanium silicide phase (69) to be achieved at device geometries less than about 0.25 micron.

  8. Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion

    PubMed Central

    2014-01-01

    Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems. PMID:24994964

  9. Ion-beam nanopatterning of silicon surfaces under codeposition of non-silicide-forming impurities

    NASA Astrophysics Data System (ADS)

    Moon, B.; Yoo, S.; Kim, J.-S.; Kang, S. J.; Muñoz-García, J.; Cuerno, R.

    2016-03-01

    We report experiments on surface nanopatterning of Si targets which are irradiated with 2-keV Ar+ ions impinging at near-glancing incidence, under concurrent codeposition of Au impurities simultaneously extracted from a gold target by the same ion beam. Previous recent experiments by a number of groups suggest that silicide formation is a prerequisite for pattern formation in the presence of metallic impurities. In spite of the fact that Au is known not to form stable compounds with the Si atoms, ripples nonetheless emerge in our experiments with nanometric wavelengths and small amplitudes, and with an orientation that changes with distance to the Au source. We provide results of sample analysis through Auger electron and energy-dispersive x-ray spectroscopies for their space-resolved chemical composition, and through atomic force, scanning transmission electron, and high-resolution transmission microscopies for their morphological properties. We discuss these findings in the light of current continuum models for this class of systems. The composition of and the dynamics within the near-surface amorphized layer that ensues is expected to play a relevant role to account for the unexpected formation of these surface structures.

  10. Progress in doping of ruthenium silicide (Ru2Si3)

    NASA Technical Reports Server (NTRS)

    Vining, C. B.; Allevato, C. E.

    1992-01-01

    Ruthenium silicide is currently under development as a promising thermoelectric material suitable for space power applications. Key to realizing the potentially high figure of merit values of this material is the development of appropriate doping techniques. In this study, manganese and iridium have been identified as useful p- and n-type dopants, respectively. Resistivity values have been reduced by more than 3 orders of magnitude. Anomalous Hall effect results, however, complicate interpretation of some of the results and further effort is required to achieve optimum doping levels.

  11. Nanomaterials of silicides and silicon for energy conversion and storage

    NASA Astrophysics Data System (ADS)

    Szczech, Jeannine Robin

    Our consumption of fossil fuels can be reduced to address the pressing concerns of global climate change by maximizing the efficiency of conversion technologies. Since many of the alternative fuel sources also being examined are intermittent in nature, it is imperative that high capacity and high power density storage devices are also developed. The conversion efficiency of current state-of-the-art thermoelectric materials is too low to meet our needs, but it may be possible to increase the conversion efficiency of thermoelectric materials by moving from the bulk to the nanoscale. The transition metal silicides, including CrSi2, beta-FeSi2 , Mg2Si and MnSi1.7, have been explored as environmentally friendly non-toxic thermoelectric materials. I began my research in the group synthesizing silicide nanowires via chemical vapor transport (CVT), and later expanded my research to include the synthesis of silicide nanocomposites for thermoelectrics and mesoporous silicon nanocomposites for use as high capacity lithium battery electrodes. Nanoscale thermoelectrics and the enhanced thermoelectric figure-of-merit ZT reported by thermoelectric researchers are reviewed in Chapter 1. Chapter 2 reviews the progress being made in the research community with nanoscale and nanostructured silicon battery anodes. The synthesis and characterization of CrSi2 nanowires synthesized via CVT is detailed in Chapter 3, followed by hyperbranched epitaxial FeSi nanostructures exhibiting merohedral twinning in Chapter 4. Nanowires are fundamentally interesting and provide insight into the changes in materials properties compared to the bulk. The synthesis of interesting nanostructured silicide materials are detailed in Chapter 5, where the conversion of diatoms into a nanostructured thermoelectric Mg2Si/MgO nanocomposite that retains the basic diatom structure after conversion is detailed. This reaction was then modified to use mesoporous silica instead of diatoms to reduce the nanocrystalline

  12. India's Worsening Uranium Shortage

    SciTech Connect

    Curtis, Michael M.

    2007-01-15

    As a result of NSG restrictions, India cannot import the natural uranium required to fuel its Pressurized Heavy Water Reactors (PHWRs); consequently, it is forced to rely on the expediency of domestic uranium production. However, domestic production from mines and byproduct sources has not kept pace with demand from commercial reactors. This shortage has been officially confirmed by the Indian Planning Commission’s Mid-Term Appraisal of the country’s current Five Year Plan. The report stresses that as a result of the uranium shortage, Indian PHWR load factors have been continually decreasing. The Uranium Corporation of India Ltd (UCIL) operates a number of underground mines in the Singhbhum Shear Zone of Jharkhand, and it is all processed at a single mill in Jaduguda. UCIL is attempting to aggrandize operations by establishing new mines and mills in other states, but the requisite permit-gathering and development time will defer production until at least 2009. A significant portion of India’s uranium comes from byproduct sources, but a number of these are derived from accumulated stores that are nearing exhaustion. A current maximum estimate of indigenous uranium production is 430t/yr (230t from mines and 200t from byproduct sources); whereas, the current uranium requirement for Indian PHWRs is 455t/yr (depending on plant capacity factor). This deficit is exacerbated by the additional requirements of the Indian weapons program. Present power generation capacity of Indian nuclear plants is 4350 MWe. The power generation target set by the Indian Department of Atomic Energy (DAE) is 20,000 MWe by the year 2020. It is expected that around half of this total will be provided by PHWRs using indigenously supplied uranium with the bulk of the remainder provided by breeder reactors or pressurized water reactors using imported low-enriched uranium.

  13. Work function characterization of solution-processed cobalt silicide

    NASA Astrophysics Data System (ADS)

    Shihab Ullah, Syed; Robinson, Matt; Hoey, Justin; Sky Driver, M.; Caruso, A. N.; Schulz, Douglas L.

    2012-06-01

    Cobalt silicide thin films were prepared by spin-coating liquid cyclohexasilane-based inks onto silicon substrates followed by a thermal treatment. The work function of the solution-processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoemission spectroscopy (UPS). Variable frequency C-V of MOS structures with silicon oxide layers of variable thickness showed that solution-processed metal silicide films exhibit a work function of 4.36 eV with one Co-Si film on Si <1 0 0> giving a UPS-derived work function of 4.80 eV. Similar work function measurements were collected for vapor-deposited MOS capacitors where Al thin films were prepared according to standard class 100 cleanroom handling techniques. In both instances, the work function values established by the electrical measurements were lower than those measured by UPS and this difference appears to be a consequence of parasitic series resistance.

  14. Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

    NASA Astrophysics Data System (ADS)

    Lin, L.; Guo, Y.; Robertson, J.

    2012-07-01

    Experimental data and ab-initio calculations find that metal silicide-silicon interfaces have weaker Fermi level pinning than simple metal-Si interfaces, which is incompatible with standard metal induced gap state (MIGS) model of Schottky barriers. We show that this arises because the MIGS in silicide interfaces are not derived from Si surface dangling bonds, but from metal "dangling bond" states in the silicide, whose energies vary with the metal. Calculations predict that rare-earth germinides will have very small barriers on n-Ge.

  15. Oxygen impurity effects at metal/silicide interfaces - Formation of silicon oxide and suboxides in the Ni/Si system

    NASA Technical Reports Server (NTRS)

    Grunthaner, P. J.; Grunthaner, F. J.; Scott, D. M.; Nicolet, M.-A.; Mayer, J. W.

    1981-01-01

    The effect of implanted oxygen impurities on the Ni/Ni2Si interface is investigated using X-ray photoelectron spectroscopy, He-4(+) backscattering and O(d, alpha)-16 N-14 nuclear reactions. Oxygen dosages corresponding to concentrations of 1, 2, and 3 atomic percent were implanted into Ni films evaporated on Si substrates. The oxygen, nickel, and silicon core lines were monitored as a function of time during in situ growth of the Ni silicide to determine the chemical nature of the diffusion barrier which forms in the presence of oxygen impurities. Analysis of the Ni, Si, and O core levels demonstrates that the formation of SiO2 is responsible for the Ni diffusion barrier rather than Ni oxide or mixed oxides, such as Ni2SiO4. It is determined that 2.2 x 10 to the 16th O/qu cm is sufficient to prevent Ni diffusion under UHV annealing conditions.

  16. NMOS contact resistance reduction with selenium implant into NiPt silicide

    NASA Astrophysics Data System (ADS)

    Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.

    2012-11-01

    A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

  17. Optimisation of a smooth multilayer nickel silicide surface for ALN growth

    NASA Astrophysics Data System (ADS)

    Martin, D. M.; Enlund, J.; Yantchev, V.; Olsson, J.; Katardjiev, I.

    2008-03-01

    For use in thin film electroacoustic (TEA) technology a few hundred nanometre thick nickel silicide (NiSi) electrode would need to be fabricated. A complete fabrication process for the formation of over 200 nm thick silicide films has been optimised for use as an electroacoustic electrode. Optimisation of silicidation temperature and identification of the mono phase of silicide is demonstrated. Thick electrodes are formed by depositing multilayers of silicon and nickel pairs onto silicon (Si) substrates before rapid thermal annealing. The numbers of multilayers and relative material thicknesses are optimized for both surface roughness and electrical resistivity. The growth of textured aluminium nitride (AlN) has been investigated on the optimised surfaces.

  18. Stacked silicide/silicon mid- to long-wavelength infrared detector

    DOEpatents

    Maserjian, Joseph

    1990-03-13

    The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

  19. Synthetic Development of Metal Silicide Nanowires for Thermoelectric and Spintronic Applications

    NASA Astrophysics Data System (ADS)

    Higgins, Jeremy Michael

    2011-12-01

    Nanomaterials, including nanowires (NWs), are a new class of materials with the potential to lead to major changes in many aspects of human society. Innumerable applications for nanomaterials are envisioned or are being realized now. However, such new functionalities are and will continue to be predicated on our ability to precisely synthesize nanomaterials, a skill yet undeveloped in a majority of chemical systems. Metal silicides are a class of refractory intermetallic compounds composed of abundant elements with widely varying properties that are currently employed in a large range of technological applications. In this thesis, I describe my exploration of metal silicide NWs, particularly those in the Mn-Si binary system, in order to develop rational synthetic strategies for accessing binary and ternary silicide NWs and characterize their potential for thermoelectric and spintronic applications. Chapter 1 develops a common set of ideas and a common language before reviewing the current "state of the art" in silicide NW synthesis, exploring a number of the mysteries still surrounding silicide NW synthesis, and presenting silicide NW applications. Chapter 2 depicts the use of Mn(CO) 5SiCl3 as the vapor phase precursor to synthesize higher manganese silicide NWs (also known as HMS, MnSi˜1.7 MnSi2--x) for the first time, the identification of the NW subphase as Mn19Si33, and conductivity measurement on HMS NWs revealing bulk-like behavior. Chapter 3 describes employing MnCl 2 as the precursor for the first successful synthesis of MnSi NWs and transverse magnetoresistance measurements on these MnSi NWs to observe the signatures of helimagnetism in NWs for the first time. Chapter 4 is a systematic examination of silicide NW synthesis by single source precursor chemical vapor deposition, highlighting the complex interplay of substrate diffusion and vapor phase reactivity giving rise to material incorporation in silicide NWs. Chapter 5 details the direct reaction of Mn

  20. Method for removing silicide coatings in a medium of low-melting metals

    SciTech Connect

    Filipovskii, A.V.; Tarasenko, I.V.

    1994-11-01

    We propose a method for removing silicide coatings from the surfaces of workpieces made of refractory metals. The entire volume of the silicide layer is borated in a melt based on low-melting metals. The boride layer formed as a result is characterized by a large number of defects, low mechanical strength, and high etching susceptibility. Therefore, it can easily be removed by any existing method.

  1. Europium Silicide – a Prospective Material for Contacts with Silicon

    PubMed Central

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-01-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

  2. Europium Silicide – a Prospective Material for Contacts with Silicon

    NASA Astrophysics Data System (ADS)

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-05-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

  3. Europium Silicide - a Prospective Material for Contacts with Silicon.

    PubMed

    Averyanov, Dmitry V; Tokmachev, Andrey M; Karateeva, Christina G; Karateev, Igor A; Lobanovich, Eduard F; Prutskov, Grigory V; Parfenov, Oleg E; Taldenkov, Alexander N; Vasiliev, Alexander L; Storchak, Vyacheslav G

    2016-01-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

  4. Controlled formation and resistivity scaling of nickel silicide nanolines

    NASA Astrophysics Data System (ADS)

    Li, Bin; Luo, Zhiquan; Shi, Li; Zhou, Ji Ping; Rabenberg, Lew; Ho, Paul S.; Allen, Richard A.; Cresswell, Michael W.

    2009-02-01

    We demonstrate a top-down method for fabricating nickel mono-silicide (NiSi) nanolines (also referred to as nanowires) with smooth sidewalls and line widths down to 15 nm. Four-probe electrical measurements reveal that the room temperature electrical resistivity of the NiSi nanolines remains constant as the line widths are reduced to 23 nm. The resistivity at cryogenic temperatures is found to increase with decreasing line width. This finding can be attributed to electron scattering at the sidewalls and is used to deduce an electron mean free path of 6.3 nm for NiSi at room temperature. The results suggest that NiSi nanolines with smooth sidewalls are able to meet the requirements for implementation at the 22 nm technology node without degradation of device performance.

  5. Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application

    NASA Astrophysics Data System (ADS)

    Biswas, Nivedita; Gurganus, Jason; Misra, Veena; Yang, Yan; Stemmer, Susanne

    2005-01-01

    Characteristics of NiSi and MoSi via full consumption of undoped silicon layers have been studied. Interaction of nickel (Ni) and molybdenum (Mo) silicides with SiO2 was evaluated in terms of work function and thermal stability. For nickel silicide, the work function values were low for samples annealed at 400 °C even after full consumption of silicon. The work function increased with the anneal temperature and stabilized at 600 °C to close to midgap values. Dielectric interaction as a result of silicide formation was studied using current-voltage characteristics. Low leakage currents in these stacks indicated minimum dielectric damage due to silicided gates. Silicidation of Mo was found to be incomplete as the capacitance-voltage curves were marked with larger EOT values and negative shifts in the flatband voltages even at 700 °C. Auger depth profiling, high resolution transmission electron microscopy (HRTEM) and x-ray diffraction (XRD) were used for material analysis of the silicided gate stacks.

  6. Synthesis and design of silicide intermetallic materials. 1998 annual progress report

    SciTech Connect

    Petrovic, J.J.; Castro, R.G.; Butt, D.P.; Park, Y.; Vaidya, R.U.; Hollis, K.J.; Kung, H.H.

    1999-03-01

    The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the US processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive US processing industries. The program presently has a number of developing industrial connections, including a CRADA with Johns Manville Corporation targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. With Combustion Technology Inc., they are developing silicide-based periscope sight tubes for the direct observation of glass melts. With Accutru International Corporation, they are developing silicide-based protective sheaths for self-verifying temperature sensors which may be used in glass furnaces and other industrial applications. The progress made on the program in this period is summarized.

  7. Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

    NASA Astrophysics Data System (ADS)

    Ozcan, Ahmet S.; Wall, Donald; Jordan-Sweet, Jean; Lavoie, Christian

    2013-04-01

    Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.

  8. Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

    SciTech Connect

    Ozcan, Ahmet S.; Wall, Donald; Jordan-Sweet, Jean; Lavoie, Christian

    2013-04-29

    Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.

  9. On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

    SciTech Connect

    Glushkov, G. I.; Tuchin, A. V.; Popov, S. V.; Bityutskaya, L. A.

    2015-12-15

    Theoretical investigations of the electronic structure, synthesis, and all-optical magnetization switching of transition-metal silicide nanostructures are reported. The magnetic moment of the nanostructures is studied as a function of the silicide cluster size and configuration. The experimentally demonstrated magnetization switching of nanostructured nickel silicide by circularly polarized light makes it possible to create high-speed storage devices with high density data recording.

  10. Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil

    NASA Astrophysics Data System (ADS)

    Liu, Zhihong; Zhang, Hui; Wang, Lei; Yang, Deren

    2008-09-01

    Nickel silicide nanowire arrays have been achieved by the decomposition of SiH4 on Ni foil at 650 °C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100-200 nm and tips with diameter of about 10-50 nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7 V µm-1, and the field enhancement factor is as high as 4280, so the arrays have promising applications as emitters.

  11. A new swelling model and its application to uranium silicide research reactor fuel

    SciTech Connect

    Hofman, G.L.; Rest, J.; Snelgrove, J.L.

    1992-01-01

    This document discusses a new version of the dispersion fuel behavior model currently being incorporated in DART, which has been generated. The model's description of fuel swelling - more specifically, the evaluation of fission-gas bubble morphology - is significantly improved. Although some of the assumptions underlying the basic model are derived from systems other than U[sub 3]Si[sub 2], it represents a physically realistic interpretation of the observed irradiation behavior of U[sub 3]Si[sub 2] over a wide range of fission densities and fission rates.

  12. A new swelling model and its application to uranium silicide research reactor fuel

    SciTech Connect

    Hofman, G.L.; Rest, J.; Snelgrove, J.L.

    1992-12-31

    This document discusses a new version of the dispersion fuel behavior model currently being incorporated in DART, which has been generated. The model`s description of fuel swelling - more specifically, the evaluation of fission-gas bubble morphology - is significantly improved. Although some of the assumptions underlying the basic model are derived from systems other than U{sub 3}Si{sub 2}, it represents a physically realistic interpretation of the observed irradiation behavior of U{sub 3}Si{sub 2} over a wide range of fission densities and fission rates.

  13. Some recent observations on the radiation behavior of uranium silicide dispersion fuel

    SciTech Connect

    Hofman, G.L.

    1988-01-01

    Addition of B{sub 4}C burnable poison results in higher plate swelling in both U{sub 3}Si{sub 2} and U{sub 3}Si-Al dispersion fuel plates and also decreases the blister threshold temperature of these plates. Prolonged annealing of U{sub 3}Si{sub 2}-Al fuel plates produced no blister after 696 hours at 400{degrees}C. Blister formation started between 257 hours and 327 hours at 425{degrees}C and between 115 hours and 210 hours at 450{degrees}C. Operation with breached cladding resulted in pillowing of an U{sub 3}Si-Al fuel plate due to reaction of the fuel core with coolant water. 4 refs., 10 figs., 2 tabs.

  14. Irradiation behavior of the CNEA's experimental uranium silicide dispersion fuel plates

    SciTech Connect

    Hofman, G.L.; Marajofsky, A.; Kohut, C.; Comision Nacional de Energia Atomica, Buenos Aires )

    1988-01-01

    Since 1978 the CNEA ECBE project has been involved in the development of dispersion fuel plates with four types of fuel materials -- UAl{sub x}, U{sub 3}O{sub 8}, U{sub 3}Si, and U{sub 3}Si{sub 2} -- to be used in low enriched (LEU < 20% {sup 235}U) fuel elements for research reactors. Miniplates with these fuel materials were manufactured at CNEA and were irradiated in the ORR in three series of irradiations as part of the RERTR miniplate irradiation program. The first irradiation contained U{sub 3}O{sub 8} and UAl{sub x} fuel, the second U{sub 3}O{sub 8}, UAl{sub x} and U{sub 3}Si, while the third irradiation test consisted of six U{sub 3}Si{sub 2} miniplates and one U{sub 3}Si miniplate. This third test is the subject of this paper. The present results compare favorably with other irradiations performed in the RERTR program{sup 1,2} showing in particular the excellent behavior of the U{sub 3}Si{sub 2}. The overall data accumulated support the qualification of the CNEA fabrication techniques. 5 refs., 13 figs., 3 tabs.

  15. URANIUM COMPOSITIONS

    DOEpatents

    Allen, N.P.; Grogan, J.D.

    1959-05-12

    This patent relates to high purity uranium alloys characterized by improved stability to thermal cycling and low thermal neutron absorption. The high purity uranium alloy contains less than 0.1 per cent by weight in total amount of any ore or more of the elements such as aluminum, silicon, phosphorous, tin, lead, bismuth, niobium, and zinc.

  16. 45Sc Solid State NMR studies of the silicides Sc TSi ( T=Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt)

    NASA Astrophysics Data System (ADS)

    Harmening, Thomas; Eckert, Hellmut; Fehse, Constanze M.; Sebastian, C. Peter; Pöttgen, Rainer

    2011-12-01

    The silicides Sc TSi ( T=Fe, Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt) were synthesized by arc-melting and characterized by X-ray powder diffraction. The structures of ScCoSi, ScRuSi, ScPdSi, and ScIrSi were refined from single crystal diffractometer data. These silicides crystallize with the TiNiSi type, space group Pnma. No systematic influences of the 45Sc isotropic magnetic shift and nuclear electric quadrupolar coupling parameters on various structural distortion parameters calculated from the crystal structure data can be detected. 45Sc MAS-NMR data suggest systematic trends in the local electronic structure probed by the scandium atoms: both the electric field gradients and the isotropic magnetic shifts relative to a 0.2 M aqueous Sc(NO 3) 3 solution decrease with increasing valence electron concentration and within each T group the isotropic magnetic shift decreases monotonically with increasing atomic number. The 45Sc nuclear electric quadrupolar coupling constants are generally well reproduced by quantum mechanical electric field gradient calculations using the WIEN2k code.

  17. Orientation dependence of nickel silicide formation in contacts to silicon nanowires

    NASA Astrophysics Data System (ADS)

    Dellas, N. S.; Liu, B. Z.; Eichfeld, S. M.; Eichfeld, C. M.; Mayer, T. S.; Mohney, S. E.

    2009-05-01

    The orientation dependence of Ni silicide phase formation in the silicidation of silicon nanowires (SiNWs) by Ni has been studied. SiNWs with a [112] growth direction contacted by Ni pads form θ-Ni2Si for annealing conditions from 350 to 700 °C for 2 min. The θ-Ni2Si has an epitaxial orientation of θ-Ni2Si[001]∥Si[111¯] and θ-Ni2Si(100)∥Si(112) with the SiNW. On the other hand, SiNWs with a [111] growth direction react with Ni pads to form NiSi2 with an epitaxial orientation of NiSi2[11¯0]∥Si[11¯0] and NiSi2(111)∥Si(111) after annealing at 450 °C for 2 min. The [111] SiNWs were also silicided at 700 °C for 2 min, forming the low-resistivity NiSi phase. The epitaxial phases identified in the reactions of Ni films with SiNWs suggest that lattice matching at both the silicide/Si growth front and the surface of the original SiNW may play a significant role in determining the first silicide segment to grow.

  18. Formation of optically-active, metal silicides using ion implantation and/or oxidation

    NASA Astrophysics Data System (ADS)

    Mitchell, L. J.; Holland, O. W.; Hossain, K.; Smith, E. B.; Golden, T. D.; Duggan, J. L.; McDaniel, F. D.

    2005-12-01

    While Si-based integrated circuits dominate the microelectronics marketplace, they cannot be fabricated with optical functionality since Si is indirect. Alternative materials have been used in such applications but the ability to integrate an optically active material directly onto a silicon substrate to co-opt the advances in Si technology and processing capabilities is the better solution. Many of the transition metals form silicides that are direct band gap semiconductors and, as such, may be integrated with Si to achieve the desired optical properties. Ion implantation of the transition metal into Si was used to form the desired silicide phase by reaction of the metal with the Si substrate. Depending upon the fluence the resulting implanted layer can consist of a two-phase region in which the silicide phase forms as isolated precipitates randomly oriented within a heavily dislocated Si matrix. Rutherford backscattering/ion channeling spectrometry was used to monitor this process as a function of temperature and time. A unique method for orienting the silicide precipitates to align them crystallographically with the Si substrate and eliminate the ion-induced dislocations that form during the initial implant is discussed. This method involves oxidation of the implanted region to segregate the silicide phase at the oxide interface. Initial results of Os- ions implanted into Si(1 0 0) are presented.

  19. Deposit model for volcanogenic uranium deposits

    USGS Publications Warehouse

    Breit, George N.; Hall, Susan M.

    2011-01-01

    The International Atomic Energy Agency's tabulation of volcanogenic uranium deposits lists 100 deposits in 20 countries, with major deposits in Russia, Mongolia, and China. Collectively these deposits are estimated to contain uranium resources of approximately 500,000 tons of uranium, which amounts to 6 percent of the known global resources. Prior to the 1990s, these deposits were considered to be small (less than 10,000 tons of uranium) with relatively low to moderate grades (0.05 to 0.2 weight percent of uranium). Recent availability of information on volcanogenic uranium deposits in Asia highlighted the large resource potential of this deposit type. For example, the Streltsovskoye district in eastern Russia produced more than 100,000 tons of uranium as of 2005; with equivalent resources remaining. Known volcanogenic uranium deposits within the United States are located in Idaho, Nevada, Oregon, and Utah. These deposits produced an estimated total of 800 tons of uranium during mining from the 1950s through the 1970s and have known resources of 30,000 tons of uranium. The most recent estimate of speculative resources proposed an endowment of 200,000 tons of uranium.

  20. Continuing investigations for technology assessment of /sup 99/Mo production from LEU (low enriched Uranium) targets

    SciTech Connect

    Vandergrift, G.F.; Kwok, J.D.; Marshall, S.L.; Vissers, D.R.; Matos, J.E.

    1987-01-01

    Currently much of the world's supply of /sup 99m/Tc for medical purposes is produced from /sup 99/Mo derived from the fissioning of high enriched uranium (HEU). The need for /sup 99m/Tc is continuing to grow, especially in developing countries, where needs and national priorities call for internal production of /sup 99/Mo. This paper presents the results of our continuing studies on the effects of substituting low enriched Uranium (LEU) for HEU in targets for the production of fission product /sup 99/Mo. Improvements in the electrodeposition of thin films of uranium metal are reported. These improvements continue to increase the appeal for the substitution of LEU metal for HEU oxide films in cylindrical targets. The process is effective for targets fabricated from stainless steel or hastaloy. A cost estimate for setting up the necessary equipment to electrodeposit uranium metal on cylindrical targets is reported. Further investigations on the effect of LEU substitution on processing of these targets are also reported. Substitution of uranium silicides for the uranium-aluminum alloy or uranium aluminide dispersed fuel used in other current target designs will allow the substitution of LEU for HEU in these targets with equivalent /sup 99/Mo-yield per target and no change in target geometries. However, this substitution will require modifications in current processing steps due to (1) the insolubility of uranium silicides in alkaline solutions and (2) the presence of significant quantities of silicate in solution. Results to date suggest that both concerns can be handled and that substitution of LEU for HEU can be achieved.

  1. New Manganese Silicide Mineral Phase in an Interplanetary Dust Particle

    NASA Technical Reports Server (NTRS)

    Nakamura-Messenger, K.; Keller, L. P.; Clemett, S. J.; Jones, J. H.; Palma, R. L.; Pepin, R. O.; Kloeck, W.; Zolensky, M. E.; Messenger, S.

    2008-01-01

    Comet 26P/Grigg-Skjellerup was identified as a source of an Earth-crossing dust stream with low Earth-encounter velocities, with peak anticipated fluxes during April in 2003 and 2004 [1]. In response to this prediction, NASA performed dedicated stratospheric dust collections using high altitude aircraft to target potential interplanetary dust particles (IDPs) from this comet stream in April 2003. Several IDPs from this collection have shown unusually low noble gas abundances [2] consistent with the predicted short space exposure ages of Grigg-Skjellerup dust particles [1]. High abundances of large D enrichments [3] and presolar grains [4] in IDPs from this collection are also consistent with an origin from the comet Grigg-Skjellerup. Here we report a new mineral from one of the cluster IDPs of the "Grigg-Skjellerup" collection, L2055. Our report focuses on an unusual manganese-iron-chromium silicide phase that, to our knowledge, has not been observed previously in nature. This unique phase may also shed light on the genesis of the enigmatic low-Fe,Mn-enriched (LIME) olivine that has been previously reported in IDPs and meteorites [5].

  2. Oxidation/vaporization of silicide coated columbium base alloys

    NASA Technical Reports Server (NTRS)

    Kohl, F. J.; Stearns, C. A.

    1971-01-01

    Mass spectrometric and target collection experiments were made at 1600 K to elucidate the mode of oxidative vaporization of two columbium alloys, fused-slurry-coated with a complex silicide former (Si-20Cr-Fe). At oxygen pressures up to 0.0005 torr the major vapor component detected by mass spectrometry for oxidized samples was gaseous silicon monoxide. Analysis of condensates collected at oxygen pressures of 0.1, 1.0 and 10 torr revealed that chromium-, silicon-, iron- and tungsten- containing species were the major products of vaporization. Equilibrium thermochemical diagrams were constructed for the metal-oxygen system corresponding to each constituent metal in both the coating and base alloy. The major vaporizing species are expected to be the gaseous oxides of chromium, silicon, iron and tungsten. Plots of vapor phase composition and maximum vaporization rate versus oxygen pressure were calculated for each coating constituent. The major contribution to weight loss by vaporization at oxygen pressures above 1 torr was shown to be the chromium-containing species.

  3. Unique lithiation and delithiation processes of nanostructured metal silicides.

    PubMed

    Zhou, Sa; Wang, Dunwei

    2010-11-23

    We report that TiSi(2) nanonet exhibits considerable activities in the reversible lithiation and delithiation processes, although bulk-sized titanium silicide is known to be inactive when used as an electrode material for lithium ion batteries. The detailed mechanism of this unique process was studied using electrochemical techniques including the electrochemical impedance spectroscopy (EIS) method. By systematic characterizations of the Nyquist plots and comparisons with the microstructure examinations, we identified the main reason for the activities as the layered crystal structure that is found stable only in TiSi(2) nanonets. The layer structure is characterized by the existence of a Si-only layer, which exhibits reactivity when exposed to lithium ions. Control studies where TiSi(2) nanowires and TiSi(2)/Si heteronanostructures were involved, respectively, were performed. Similar to bulk TiSi(2), TiSi(2) nanowires show limited reactivity in lithium ion insertion and deinsertion; the EIS characteristics of TiSi(2)/Si heteronanostructures, on the other hand, are distinctly different from those of TiSi(2) nanonets. The result supports our proposed TiSi(2) nanonet lithiation mechanism. This discovery highlights the uniqueness of nanoscale materials and will likely broaden the spectrum of electrode material choices for electrochemical energy storage.

  4. High quality factor platinum silicide microwave kinetic inductance detectors

    NASA Astrophysics Data System (ADS)

    Szypryt, P.; Mazin, B. A.; Ulbricht, G.; Bumble, B.; Meeker, S. R.; Bockstiegel, C.; Walter, A. B.

    2016-10-01

    We report on the development of microwave kinetic inductance detectors (MKIDs) using platinum silicide as the sensor material. MKIDs are an emerging superconducting detector technology, capable of measuring the arrival times of single photons to better than two microseconds and their energies to around ten percent. Previously, MKIDs have been fabricated using either sub-stoichiometric titanium nitride or aluminum, but TiN suffers from the spatial inhomogeneities in the superconducting critical temperature and Al has a low kinetic inductance fraction, causing low detector sensitivity. To address these issues, we have instead fabricated the PtSi microresonators with the superconducting critical temperatures of 944 ± 12 mK and high internal quality factors ( Q i ≳ 10 6 ). These devices show typical quasiparticle lifetimes of τ q p ≈ 30 - 40 μ s and spectral resolution, R = λ / Δ λ , of 8 at 406.6 nm. We compare PtSi MKIDs to those fabricated with TiN and detail the substantial advantages that PtSi MKIDs have to offer.

  5. Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

    PubMed Central

    Babenko, Vitaliy; Murdock, Adrian T.; Koós, Antal A.; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A.; Nicholas, Robin J.; Grobert, Nicole

    2015-01-01

    Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min−1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials. PMID:26175062

  6. Oxidation and crystal field effects in uranium

    NASA Astrophysics Data System (ADS)

    Tobin, J. G.; Yu, S.-W.; Booth, C. H.; Tyliszczak, T.; Shuh, D. K.; van der Laan, G.; Sokaras, D.; Nordlund, D.; Weng, T.-C.; Bagus, P. S.

    2015-07-01

    An extensive investigation of oxidation in uranium has been pursued. This includes the utilization of soft x-ray absorption spectroscopy, hard x-ray absorption near-edge structure, resonant (hard) x-ray emission spectroscopy, cluster calculations, and a branching ratio analysis founded on atomic theory. The samples utilized were uranium dioxide (U O2) , uranium trioxide (U O3) , and uranium tetrafluoride (U F4) . A discussion of the role of nonspherical perturbations, i.e., crystal or ligand field effects, will be presented.

  7. Oxidation and crystal field effects in uranium

    SciTech Connect

    Tobin, J. G.; Booth, C. H.; Shuh, D. K.; van der Laan, G.; Sokaras, D.; Weng, T. -C.; Yu, S. W.; Bagus, P. S.; Tyliszczak, T.; Nordlund, D.

    2015-07-06

    An extensive investigation of oxidation in uranium has been pursued. This includes the utilization of soft x-ray absorption spectroscopy, hard x-ray absorption near-edge structure, resonant (hard) x-ray emission spectroscopy, cluster calculations, and a branching ratio analysis founded on atomic theory. The samples utilized were uranium dioxide (UO2), uranium trioxide (UO3), and uranium tetrafluoride (UF4). As a result, a discussion of the role of non-spherical perturbations, i.e., crystal or ligand field effects, will be presented.

  8. JACKETING URANIUM

    DOEpatents

    Saller, H.A.; Keeler, J.R.

    1959-07-14

    The bonding to uranium of sheathing of iron or cobalt, or nickel, or alloys thereof is described. The bonding is accomplished by electro-depositing both surfaces to be joined with a coating of silver and amalgamating or alloying the silver layer with mercury or indium. Then the silver alloy is homogenized by exerting pressure on an assembly of the uranium core and the metal jacket, reducing the area of assembly and heating the assembly to homogenize by diffusion.

  9. Sputtering of uranium

    NASA Technical Reports Server (NTRS)

    Gregg, R.; Tombrello, T. A.

    1978-01-01

    Results are presented for an experimental study of the sputtering of U-235 atoms from foil targets by hydrogen, helium, and argon ions, which was performed by observing tracks produced in mica by fission fragments following thermal-neutron-induced fission. The technique used allowed measurements of uranium sputtering yields of less than 0.0001 atom/ion as well as yields involving the removal of less than 0.01 monolayer of the uranium target surface. The results reported include measurements of the sputtering yields for 40-120-keV protons, 40-120-keV He-4(+) ions, and 40- and 80-keV Ar-40(+) ions, the mass distribution of chunks emitted during sputtering by the protons and 80-keV Ar-40(+) ions, the total chunk yield during He-4(+) sputtering, and some limited data on molecular sputtering by H2(+) and H3(+). The angular distribution of the sputtered uranium is discussed, and the yields obtained are compared with the predictions of collision cascade theory.

  10. Exploitation of a Self-limiting Process for Reproducible Formation of Ultrathin Ni(1-x)Pt(x) Silicide Films

    SciTech Connect

    Z Zhang; B Yang; Y Zhu; S Gaudet; S Rossnagel; A Kellock; A Ozcan; C Murray; P Desjardins; et al.

    2011-12-31

    This letter reports on a process scheme to obtain highly reproducible Ni{sub 1-x}Pt{sub x} silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction.

  11. Impact of additional Pt and NiSi crystal orientation on channel stress induced by Ni silicide film in metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Mizuo, Mariko; Yamaguchi, Tadashi; Kudo, Shuichi; Hirose, Yukinori; Kimura, Hiroshi; Tsuchimoto, Jun-ichi; Hattori, Nobuyoshi

    2014-01-01

    The impact of additional Pt and Ni monosilicide (NiSi) crystal orientation on channel stress from Ni silicide in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been demonstrated. The channel stress generation mechanism can be explained by the NiSi crystal orientation. In pure Ni silicide films, the channel stress in the p-type substrate is much larger than that in the n-type one, since the NiSi a-axis parallel to the channel direction is strongly aligned on the p-type substrate compared with on the n-type one. On the other hand, in NiPt silicide films, the difference in the channel stress between the p- and n-type substrates is small, because the NiSi crystal orientation on the p-type substrate is similar to that on the n-type one. These results can be explained by the Pt segregation at the interface between the NiSi film and the Si surface. Segregated Pt atoms cause the NiSi b-axis to align normal to the Si(001) surface in the nucleation step owing to the expansion of the NiSi lattice spacing at the NiSi/Si interface. Furthermore, the Pt segregation mechanism is considered to be caused by the grain boundary diffusion in the Ni2Si film during NiSi formation. We confirmed that the grains of Ni2Si on the p-type substrate are smaller than those on the n-type one. The Ni2Si film on the p-type substrate has more grain boundary diffusion paths than that on the n-type one. Therefore, the amount of Pt segregation at the NiSi/Si interface on the p-type substrate is larger than that on the n-type one. Consequently, the number of NiSi grains with the b-axis aligned normal to the Si(001) in the p-type substrate is larger than that in the n-type one. As a result, the channel stress induced by NiPt silicide in PMOS is larger than that in NMOS. According to this mechanism, controlling the Pt concentration at the NiSi/Si interface is one of the key factors for channel stress engineering.

  12. Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides

    NASA Astrophysics Data System (ADS)

    Geenen, F. A.; Knaepen, W.; Moens, F.; Brondeel, L.; Leenaers, A.; Van den Berghe, S.; Detavernier, C.

    2016-07-01

    Silicon or germanium-based transistors are nowadays used in direct contact with silicide or germanide crystalline alloys for semiconductor device applications. Since these compounds are formed at elevated temperatures, accurate knowledge of the thermal expansion of both substrate and the contact is important to address temperature depending effects such as thermal stress. Here we report the linear coefficients of thermal expansion of Ni-, Pd- and Pt-based mono-germanides, mono-silicides and di-metal-silicides as determined by powder-based x-ray diffraction between 300 and 1225 K. The investigated mono-metallic compounds, all sharing the MnP crystal structure, as well as Pd2Si and Pt2Si exhibit anisotropic expansion. By consequence, this anisotropic behaviour should be taken into account for evaluating the crystal unit’s cell at elevated temperatures.

  13. Silicide formation process of Er films with Ta and TaN capping layers.

    PubMed

    Choi, Juyun; Choi, Seongheum; Kim, Jungwoo; Na, Sekwon; Lee, Hoo-Jeong; Lee, Seok-Hee; Kim, Hyoungsub

    2013-12-11

    The phase development and defect formation during the silicidation reaction of sputter-deposited Er films on Si with ∼20-nm-thick Ta and TaN capping layers were examined. TaN capping effectively prevented the oxygen incorporation from the annealing atmosphere, which resulted in complete conversion to the ErSi2-x phase. However, significant oxygen penetration through the Ta capping layer inhibited the ErSi2-x formation, and incurred the growth of several Er-Si-O phases, even consuming the ErSi2-x layer formed earlier. Both samples produced a number of small recessed defects at an early silicidation stage. However, large rectangular or square-shaped surface defects, which were either pitlike or pyramidal depending on the capping layer identity, were developed as the annealing temperature increased. The origin of different defect generation mechanisms was suggested based on the capping layer-dependent silicidation kinetics.

  14. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    SciTech Connect

    Siekhaus, W. J.; Teslich, N. E.; Weber, P. K.

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

  15. Radiation-associated lung cancer: a comparison of the histology of lung cancers in uranium miners and survivors of the atomic bombings of Hiroshima and Nagasaki.

    PubMed

    Land, C E; Shimosato, Y; Saccomanno, G; Tokuoka, S; Auerbach, O; Tateishi, R; Greenberg, S D; Nambu, S; Carter, D; Akiba, S

    1993-05-01

    A binational panel of Japanese and American pulmonary pathologists reviewed tissue slides of lung cancer cases diagnosed among Japanese A-bomb survivors and American uranium miners and classified the cases according to histological subtype. Blind reviews were completed on slides from 92 uranium miners and 108 A-bomb survivors, without knowledge of population, sex, age, smoking history, or level of radiation exposure. Consensus diagnoses were obtained with respect to principal subtype, including squamous-cell cancer, small-cell cancer, adenocarcinoma, and less frequent subtypes. The results were analyzed in terms of population, radiation dose, and smoking history. As expected, the proportion of squamous-cell cancer was positively related to smoking history in both populations. The relative frequencies of small-cell cancer and adenocarcinoma were very different in the two populations, but this difference was accounted for adequately by differences in radiation dose or, more specifically, dose-based relative risk estimates based on published data. Radiation-induced cancers appeared more likely to be of the small-cell subtype, and less likely to be adenocarcinomas, in both populations. The data appeared to require no additional explanation in terms of radiation quality (alpha particles vs gamma rays), uniform or local irradiation, inhaled vs external radiation source, or other population difference. PMID:8387679

  16. Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content

    NASA Astrophysics Data System (ADS)

    Redondo-Cubero, A.; Galiana, B.; Lorenz, K.; Palomares, FJ; Bahena, D.; Ballesteros, C.; Hernandez-Calderón, I.; Vázquez, L.

    2016-11-01

    We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe+ ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution.

  17. Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content.

    PubMed

    Redondo-Cubero, A; Galiana, B; Lorenz, K; Palomares, F J; Bahena, D; Ballesteros, C; Hernandez-Calderón, I; Vázquez, L

    2016-11-01

    We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe(+) ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution.

  18. Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content.

    PubMed

    Redondo-Cubero, A; Galiana, B; Lorenz, K; Palomares, F J; Bahena, D; Ballesteros, C; Hernandez-Calderón, I; Vázquez, L

    2016-11-01

    We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe(+) ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution. PMID:27670245

  19. An inert marker study for palladium silicide formation - Si moves in polycrystalline Pd2Si

    NASA Technical Reports Server (NTRS)

    Ho, K. T.; Lien, C.-D.; Shreter, U.; Nicolet, M.-A.

    1985-01-01

    A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 111 and 100 line-type Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed.

  20. Contributions to the geology of uranium and thorium by the United States Geological Survey and Atomic Energy Commission for the United Nations International Conference on Peaceful Uses of Atomic Energy, Geneva, Switzerland, 1955

    USGS Publications Warehouse

    Page, Lincoln R.; Stocking, Hobart E.; Smith, Harriet B.

    1956-01-01

    Within the boundaries of the United States abnormal amounts of uranium have been found in rocks of nearly all geologic ages and lithologic types. Distribution of ore is more restricted. On the Colorado Plateau, the Morrison formation of Jurassic age yields 61.4 percent of the ore produced in the United States, and the Chinle conglomerate and Shinarump formation of Triassic age contribute 26.0 and 5.8 percent, respectively. Clastic, carbonaceous, and carbonate sedimentary rocks of Tertiary, Mesozoic, and Paleozoic ages and veins of Tertiary age are the source of the remaining 6.8 percent.

  1. Nuclear reactor fuel structure containing uranium alloy wires embedded in a metallic matrix plate

    DOEpatents

    Travelli, Armando

    1988-01-01

    A flat or curved plate structure, to be used as fuel in a nuclear reactor, comprises elongated fissionable wires or strips embedded in a metallic continuous non-fissionable matrix plate. The wires or strips are made predominantly of a malleable uranium alloy, such as uranium silicide, uranium gallide or uranium germanide. The matrix plate is made predominantly of aluminum or an aluminum alloy. The wires or strips are located in a single row at the midsurface of the plate, parallel with one another and with the length dimension of the plate. The wires or strips are separated from each other, and from the surface of the plate, by sufficient thicknesses of matrix material, to provide structural integrity and effective fission product retention, under neutron irradiation. This construction makes it safely feasible to provide a high uranium density, so that the uranium enrichment with uranium 235 may be reduced below about 20%, to deter the reprocessing of the uranium for use in nuclear weapons.

  2. Nuclear reactor fuel structure containing uranium alloy wires embedded in a metallic matrix plate

    DOEpatents

    Travelli, A.

    1985-10-25

    A flat or curved plate structure, to be used as fuel in a nuclear reactor, comprises elongated fissionable wires or strips embedded in a metallic continuous non-fissionable matrix plate. The wires or strips are made predominantly of a malleable uranium alloy, such as uranium silicide, uranium gallide or uranium germanide. The matrix plate is made predominantly of aluminum or an aluminum alloy. The wires or strips are located in a single row at the midsurface of the plate, parallel with one another and with the length dimension of the plate. The wires or strips are separated from each other, and from the surface of the plate, by sufficient thicknesses of matrix material, to provide structural integrity and effective fission product retention, under neutron irradiation. This construction makes it safely feasible to provide a high uranium density, so that the uranium enrichment with uranium 235 may be reduced below about 20%, to deter the reprocessing of the uranium for use in nuclear weapons.

  3. A study of a zone approach to IAEA (International Atomic Energy Agency) safeguards: The low-enriched-uranium zone of a light-water-reactor fuel cycle

    SciTech Connect

    Fishbone, L.G.; Higinbotham, W.A.

    1986-06-01

    At present the IAEA designs its safeguards approach with regard to each type of nuclear facility so that the safeguards activities and effort are essentially the same for a given type and size of nuclear facility wherever it may be located. Conclusions regarding a state are derived by combining the conclusions regarding the effectiveness of safeguards for the individual facilities within a state. In this study it was convenient to define three zones in a state with a closed light-water-reactor nuclear fuel cycle. Each zone contains those facilities or parts thereof which use or process nuclear materials of the same safeguards significance: low-enriched uranium, radioactive spent fuel, or recovered plutonium. The possibility that each zone might be treated as an extended material balance area for safeguards purposes is under investigation. The approach includes defining the relevant features of the facilities in the three zones and listing the safeguards activities which are now practiced. This study has focussed on the fresh-fuel zone, the several facilities of which use or process low-enriched uranium. At one extreme, flows and inventories would be verified at each material balance area. At the other extreme, the flows into and out of the zone and the inventory of the whole zone would be verified. There are a number of possible safeguards approaches which fall between the two extremes. The intention is to develop a rational approach which will make it possible to compare the technical effectiveness and the inspection effort for the facility-oriented approach, for the approach involving the zone as a material balance area, and for some reasonable intermediate safeguards approaches.

  4. High-temperature thermochemistry of transition metal borides, silicides and related compounds. Final report

    SciTech Connect

    Klemppa, Ole J.

    2000-10-01

    Earlier this year in collaboration with Dr. Susan V. Meschel we prepared a major review paper which gives a comprehensive summary of what our laboratory has accomplished with support from DOE. This paper is No.43 in the List of Publications provided. It was presented to TMS at its National Meeting in Nashville, TN last March. A copy of the manuscript of this paper was recently mailed to DOE. It has been submitted for publication in Journal of Alloys and Compounds. This review paper summarizes our observed trends in the enthalpies of formation of TR-X and RE-X compounds (where X is a IIIB or IVB element) in their dependence of the atomic number of the transition metal (TR) and the lanthanide metal (RE). In this paper our measured enthalpies of formation for each alloy family are compared for the 3d, 4d and 5d transition metal elements. We also compare our experimental results with predicted values based on Miedema's semi-empirical model. Data are presented for the carbides, silicides, germanides and stannides in Group IVB, and for the borides and aluminides in Group IIIB. During the past year (1999-2000) we have extended our work to compounds of the 3d, 4d and 5d elements with gallium (see papers No.40, No.41, and No.45 in the List of Publications). Fig. 1 (taken from No.45) presents a systematic picture of our experimental values for the most exothermic gallide compounds formed with the transition elements. This figure is characteristic of the other systematic pictures which we have found for the two other IIIB elements which we have studied and for the four IVB elements. These figures are all presented in Ref. No.43. This paper also illustrates how the enthalpy of formation of compounds of the IIIB and IVB elements with the lanthanide elements (with the exception of Pm, Eu and Yb) depend on the atomic number of RE. Finally our results for the RE-X compounds are compared with the predictions of Gschneidner (K.A. Gschneidner, Jr., J. Less Common Metals 17, 1

  5. Epitaxy of CoSix (1silicides on Si(111) studied by photoemission and extended x-ray-absorption fine-structure techniques

    NASA Astrophysics Data System (ADS)

    Pirri, C.; Hong, S.; Tuilier, M. H.; Wetzel, P.; Gewinner, G.; Cortès, R.

    1996-01-01

    Electronic and structural properties of epitaxial CoSix layers have been investigated by means of core-level and valence-band photoemission, x-ray photoelectron diffraction, and extended x-ray-absorption fine-structure (EXAFS) experiments. CoSix layers of various x compositions have been grown on silicon by low rate Co and Si co-deposition onto room-temperature Si(111) substrates, with film thicknesses ranging from 30 to 100 Å. Photoemission shows substantial differences in valence and core-level spectra with respect to those of stable fluorite-type CoSi2 and ɛ-CoSi and indicate that well-defined metastable phases are formed. In particular, core-level photoemission experiments performed with a monochromatized x-ray source show large Si 2p binding-energy shifts (~0.4 eV) in the room-temperature deposited CoSix (1atoms are coordinated with eight Si atoms with a bond length of ~2.33 Å and with Co atoms with bond lengths in the 2.67-2.68 Å range. Such short Co-Co bond lengths show that the structure is definitively different from the stable CaF2-type CoSi2, even at the CoSi2 composition. All experimental data indicate that CoSix silicides crystallize in a cubic lattice close to that of pseudomorphic FeSix silicides, namely, a CsCl-type derived structure.

  6. Uranium bombs

    NASA Astrophysics Data System (ADS)

    DeGroot, Gerard

    2009-11-01

    Enrico Fermi was a brilliant physicist, but he did occasionally get things wrong. In 1934 he famously bombarded a sample of uranium with neutrons. The result was astounding: the experiment had, Fermi concluded, produced element 93, later called neptunium. The German physicist Ida Noddack, however, came to an even more spectacular conclusion, namely that Fermi had split the uranium nucleus to produce lighter elements. Noddack's friend Otto Hahn judged that idea preposterous and advised her to keep quiet, since ridicule could ruin a female physicist. She ignored that advice, and was, indeed, scorned.

  7. Atom Probe Tomography of Nanoscale Electronic Materials

    SciTech Connect

    Larson, David J.; Prosa, Ty J.; Perea, Daniel E.; Inoue, Hidekazu; Mangelinck, D.

    2016-01-01

    Atom probe tomography (APT) is a mass spectrometry based on time-of-flight measurements which also concurrently produces 3D spatial information. The reader is referred to any of the other papers in this volume or to the following references for further information 4–8. The current capabilities of APT, such as detecting a low number of dopant atoms in nanoscale devices or segregation at a nanoparticle interface, make this technique an important component in the nanoscale metrology toolbox. In this manuscript, we review some of the applications of APT to nanoscale electronic materials, including transistors and finFETs, silicide contact microstructures, nanowires, and nanoparticles.

  8. Measurements of uranium mass confined in high density plasmas

    NASA Technical Reports Server (NTRS)

    Stoeffler, R. C.

    1976-01-01

    An X-ray absorption method for measuring the amount of uranium confined in high density, rf-heated uranium plasmas is described. A comparison of measured absorption of 8 keV X-rays with absorption calculated using Beer Law indicated that the method could be used to measure uranium densities from 3 times 10 to the 16th power atoms/cu cm to 5 times 10 to the 18th power atoms/cu cm. Tests were conducted to measure the density of uranium in an rf-heated argon plasma with UF6 infection and with the power to maintain the discharge supplied by a 1.2 MW rf induction heater facility. The uranium density was measured as the flow rate through the test chamber was varied. A maximum uranium density of 3.85 times 10 to the 17th power atoms/cu cm was measured.

  9. Methods of investigation and properties of powder materials: Thermodynamic properties of lanthanum silicides at high temperatures

    SciTech Connect

    Bolgar, A.S.; Gorbachuk, N.P.; Blinder, A.V.

    1994-09-01

    The enthalpies of five lanthanum silicides were determined over the temperature range 380-2225 K by the method of mixtures. Values of the basic thermodynamic functions of the materials were calculated and tabulated, as well as the temperatures, enthalpies, and entropies of fusion. The temperatures and enthalpies of fusion were related to the relative concentrations of silicon in the compounds.

  10. Silicide Coating Fabricated by HAPC/SAPS Combination to Protect Niobium Alloy from Oxidation.

    PubMed

    Sun, Jia; Fu, Qian-Gang; Guo, Li-Ping; Wang, Lu

    2016-06-22

    A combined silicide coating, including inner NbSi2 layer and outer MoSi2 layer, was fabricated through a two-step method. The NbSi2 was deposited on niobium alloy by halide activated pack cementation (HAPC) in the first step. Then, supersonic atmospheric plasma spray (SAPS) was applied to obtain the outer MoSi2 layer, forming a combined silicide coating. Results show that the combined coating possessed a compact structure. The phase constitution of the combined coating prepared by HAPC and SAPS was NbSi2 and MoSi2, respectively. The adhesion strength of the combined coating increased nearly two times than that for single sprayed coating, attributing to the rougher surface of the HAPC-bond layer whose roughness increased about three times than that of the grit-blast substrate. After exposure at 1200 °C in air, the mass increasing rate for single HAPC-silicide coating was 3.5 mg/cm(2) because of the pest oxidation of niobium alloy, whereas the combined coating displayed better oxidation resistance with a mass gain of only 1.2 mg/cm(2). Even more, the combined coating could significantly improve the antioxidation ability of niobium based alloy at 1500 °C. The good oxidation resistance of the combined silicide coating was attributed to the integrity of the combined coating and the continuous SiO2 protective scale provided by the oxidation of MoSi2.

  11. Machining of uranium and uranium alloys

    SciTech Connect

    Morris, T.O.

    1981-12-14

    Uranium and uranium alloys can be readily machined by conventional methods in the standard machine shop when proper safety and operating techniques are used. Material properties that affect machining processes and recommended machining parameters are discussed. Safety procedures and precautions necessary in machining uranium and uranium alloys are also covered. 30 figures.

  12. URANIUM ALLOYS

    DOEpatents

    Seybolt, A.U.

    1958-04-15

    Uranium alloys containing from 0.1 to 10% by weight, but preferably at least 5%, of either zirconium, niobium, or molybdenum exhibit highly desirable nuclear and structural properties which may be improved by heating the alloy to about 900 d C for an extended period of time and then rapidly quenching it.

  13. Uranium, natural

    Integrated Risk Information System (IRIS)

    Uranium , natural ; CASRN 7440 - 61 - 1 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogeni

  14. Processing of transition metal silicides for high-temperature applications

    SciTech Connect

    Deevi, S.C.; Sikka, V.K.

    1995-12-31

    The authors review and discuss recent developments in the processing and mechanical properties of MoSi{sub 2} and its composites. High-temperature creep rates of MoSi{sub 2} and its composites are compared to those of several intermetallics and discussed in relation to grain-size effects. Thermophysical properties of MoSi{sub 2} and Si{sub 3}N{sub 4} are compared, and the need for functionally graded composites of MoSi{sub 2}-Si{sub 3}N{sub 4} is discussed. This is followed by a discussion of combustion synthesis, reaction synthesis and densification, in-situ composite development, and reactive hot extrusion of metal-silicon mixtures. In combustion synthesis, a heterogeneous reaction occurs between liquid Si and Mo powder to form MoSi{sub 2}. This technique can be applied to obtain composites and alloys of MoSi{sub 2} and various other transition-metal silicides. In-situ synthesis of a composite of MoSi{sub 2}-Al{sub 2}O{sub 3} was carried out by reacting a thermite mixture consisting of MoO{sub 3}, Al, and Si powders. X-ray characterization of the products obtained at various temperatures reveals that the mechanism consists of a reduction of MoO{sub 3} by Al to MoO{sub 2}, followed by a simultaneous oxidation of Al to Al{sub 2}O{sub 3} and a synthesis reaction between reduced Mo and Si to form MoSi{sub 2}. The rate-determining step is found to be reduction of MoO{sub 2} by Al and oxidation of Al to Al{sub 2}O{sub 3}. The thermite reaction was moderated by adding Mo and Si to the mixture of MoO{sub 3}, Al, and Si, such that the ratio of MoSi{sub 2} to the thermite was in the range of 60:40 to 90:10. Reactive extrusion of metal-silicon mixtures of 3Ni-Si and Co-2Si results in a dense product with at least two phases.

  15. Thermal Stability Study from Room Temperature to 1273 K (1000 °C) in Magnesium Silicide

    NASA Astrophysics Data System (ADS)

    Stefanaki, Eleni-Chrysanthi; Hatzikraniotis, Euripides; Vourlias, George; Chrissafis, Konstantinos; Kitis, George; Paraskevopoulos, Konstantinos M.; Polymeris, George S.

    2016-10-01

    Doped magnesium silicide has been identified as a promising and environmentally friendly advanced thermoelectric material in the temperature range between 500 K and 800 K (227 °C and 527 °C). Besides the plethora of magnesium silicide thermoelectric advantages, it is well known for its high sensitivity to oxidation. Oxidation is one of the primary instability mechanisms of degradation of high-temperature Mg2Si thermoelectric devices, as in the presence of O2, Mg2Si decomposes to form MgO and Si. In this work, commercial magnesium silicide in bulk form was used for thermal stability study from room temperature to 1273 K (1000 °C). Various techniques such as DTA-TG, PXRD, and FTIR have been applied. Moreover, the application of thermoluminescence (TL) as an effective and alternative probe for the study of oxidation and decomposition has been exploited. The latter provides qualitative but very helpful hints toward oxidation studies. The low-detection threshold of thermoluminescence, in conjunction with the chemical composition of the oxidation byproducts, consisting of MgO, Mg2SiO4, and SiO2, constitute two powerful motivations for further investigating its viable use as proxy for instability/decomposition studies of magnesium silicide. The partial oxidation reaction has been adopted due to the experimental fact that magnesium silicide is monitored throughout the heating temperature range of the present study. Finally, the role of silicon dioxide to the decomposition procedure, being in amorphous state and gradually crystallizing, has been highlighted for the first time in the literature. Mg2Si oxidation takes place in two steps, including a mild oxidation process with temperature threshold of 573 K (300 °C) and an abrupt one after 773 K (500 °C). Implications on the optimum operational temperature range for practical thermoelectric (TE) applications have also been briefly discussed.

  16. Impact of silicide layer on single photon avalanche diodes in a 130 nm CMOS process

    NASA Astrophysics Data System (ADS)

    Cheng, Zeng; Palubiak, Darek; Zheng, Xiaoqing; Deen, M. Jamal; Peng, Hao

    2016-09-01

    Single photon avalanche diode (SPAD) is an attractive solid-state optical detector that offers ultra-high photon sensitivity (down to the single photon level), high speed (sub-nanosecond dead time) and good timing performance (less than 100 ps). In this work, the impact of the silicide layer on SPAD’s characteristics, including the breakdown voltage, dark count rate (DCR), after-pulsing probability and photon detection efficiency (PDE) is investigated. For this purpose, two sets of SPAD structures in a standard 130 nm complementary metal oxide semiconductor (CMOS) process are designed, fabricated, measured and compared. A factor of 4.5 (minimum) in DCR reduction, and 5 in PDE improvements are observed when the silicide layer is removed from the SPAD structure. However, the after-pulsing probability of the SPAD without silicide layer is two times higher than its counterpart with silicide. The reasons for these changes will be discussed.

  17. Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

    PubMed

    Liu, Zhihong; Zhang, Hui; Wang, Lei; Yang, Deren

    2008-09-17

    Nickel silicide nanowire arrays have been achieved by the decomposition of SiH(4) on Ni foil at 650 °C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100-200 nm and tips with diameter of about 10-50 nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7 V µm(-1), and the field enhancement factor is as high as 4280, so the arrays have promising applications as emitters.

  18. Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

    PubMed

    Liu, Zhihong; Zhang, Hui; Wang, Lei; Yang, Deren

    2008-09-17

    Nickel silicide nanowire arrays have been achieved by the decomposition of SiH(4) on Ni foil at 650 °C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100-200 nm and tips with diameter of about 10-50 nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7 V µm(-1), and the field enhancement factor is as high as 4280, so the arrays have promising applications as emitters. PMID:21832554

  19. Matrix Infrared Spectroscopic and Computational Investigations of Novel Small Uranium Containing Molecules - Final Technical Report

    SciTech Connect

    Andrews, Lester

    2014-10-17

    Direct reactions of f-element uranium, thorium and lanthanide metal atoms were investigated with small molecules. These metal atoms were generated by laser ablation and mixed with the reagent molecules then condensed with noble gases at 4K. The products were analyzed by absorption of infrared light to measure vibrational frequencies which were confirmed by quantum chemical calculations. We have learned more about the reactivity of uranium atoms with common molecules, which will aid in the develolpment of further applications of uranium.

  20. Derived enriched uranium market

    SciTech Connect

    Rutkowski, E.

    1996-12-01

    The potential impact on the uranium market of highly enriched uranium from nuclear weapons dismantling in the Russian Federation and the USA is analyzed. Uranium supply, conversion, and enrichment factors are outlined for each country; inventories are also listed. The enrichment component and conversion components are expected to cause little disruption to uranium markets. The uranium component of Russian derived enriched uranium hexafluoride is unresolved; US legislation places constraints on its introduction into the US market.

  1. Uzbekistan unveiled. [Uranium production to commence

    SciTech Connect

    Mazurkevich, A.P.

    1993-05-01

    Through centuries of revolution, war and strife, the people of Uzbekistan have built a reputation as skilled and tenacious merchants. Since antiquity, when the Silk Road from China turned toward Europe at Smarakand, they have been master traders of such valuable commodities as cotton, fruits, vegetables, spices and gold. Now, they're about to introduce another of their specialties to the world: Uranium. Uranium mining in the country is controlled by a new, independent company, the Kizilkumredmetzoloto, parent of the Navoi Mining Metallurgy Combine [NMMC]. Established in 1958 at the height of the Cold War, when uranium mining for military stockpiles got started in earnest, Navoi was wholly owned by the USSR's Ministry of Medium Machine Building. Up until 1991, virtually all of Navoi's uranium production, strictly in the form of uranium concentrates, was used for either military purposes or for nuclear power plants within the former Soviet Union. The republic exerted no control over the final destination of its uranium. All production and operating decisions for Navoi's mines were dictated by the Soviet Union's Ministry of Atomic Power Industry [MAPI], which developed annual quotas for uranium production in each republic of the country. Uranium from the republics was sold to Techsnabexport [Tenex], the distribution and marketing arm of MAPI. Exports to other countries were handled strictly by Tenex.

  2. Development of fused slurry silicide coatings for tantalum reentry heat shields

    NASA Technical Reports Server (NTRS)

    Warnock, R. V.; Stetson, A. R.

    1972-01-01

    A fused slurry silicide coating was developed to provide atmospheric reentry protection for the 90Ta-lOW alloy. Overlaying the silicide with a highly refractory glass greatly improved total lifetime and reliability of the coating system. Low pressure, slow cycle lifetimes in excess of 100 cycles were consistently recorded for 1700 K - 13 and 1300 N/sq m test conditions. A minimum of 25 cycles was obtained for 1810 K - 1300 N/sq m conditions. About 50 simulated reentry cycles (variable temperature, pressure, and stress) were endured by coated 1-inch miniature heat shield panels when exposed to a maximum of 1700 K and either internal or external pressure conditions.

  3. Iron silicide root formation in carbon nanotubes grown by microwave PECVD.

    PubMed

    AuBuchon, Joseph F; Daraio, Chiara; Chen, Li-Han; Gapin, Andrew I; Jin, Sungho

    2005-12-29

    Aligned carbon nanotubes have been grown using microwave plasma enhanced chemical vapor deposition (PECVD). The carbon nanotubes are nucleated from iron catalyst particles which, during growth, remain adherent to the silicon substrates. By analysis with high-resolution electron microscopy, we observe iron silicide roots penetrating into the silicon substrate at the interface of the catalyst particles and the substrate, thus providing strong adhesion of the carbon nanotubes onto the substrate. The iron silicide roots assist in the attachment of the catalyst particles to the substrate and play a role in the evolution of the catalyst particle morphology and resulting base growth mode. Carbon nanotubes grown by microwave PECVD could exhibit superior electrical and thermal transport properties over other PECVD processes, so an understanding of the growth mechanism is important for utilization in device applications. PMID:16375415

  4. Growth of single-crystalline cobalt silicide nanowires and their field emission property

    PubMed Central

    2013-01-01

    In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ~ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ~ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters. PMID:23819795

  5. Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

    SciTech Connect

    Pizzocchero, Filippo; Bøggild, Peter; Booth, Timothy J.

    2013-09-21

    We show that surface arc-discharge deposited carbon plays a critical intermediary role in the breakdown of thermally grown oxide diffusion barriers of 90 nm on a silicon wafer at 1035 °C in an Ar/H{sub 2} atmosphere, resulting in the formation of epitaxial copper silicide particles in ≈ 10 μm wide channels, which are aligned with the intersections of the (100) surface of the wafer and the (110) planes on an oxidized silicon wafer, as well as endotaxial copper silicide nanoparticles within the wafer bulk. We apply energy dispersive x-ray spectroscopy, in combination with scanning and transmission electron microscopy of focused ion beam fabricated lammelas and trenches in the structure to elucidate the process of their formation.

  6. Development of a fused slurry silicide coating for the protection of tantalum alloys

    NASA Technical Reports Server (NTRS)

    Packer, C. M.; Perkins, R. A.

    1974-01-01

    Results are reported of a research program to develop a reliable high-performance, fused slurry silicide protective coating for a tantalum-10 tungsten alloy for use at 1427 to 1538 C at 0.1 to 10 torr air pressure under cyclic temperature conditions. A review of silicide coating performance under these conditions indicated that the primary wear-out mode is associated with widening of hairline fissures in the coating. Consideration has been given to modifying the oxidation products that form on the coating surface to provide a seal for these fissures and to minimize their widening. On the basis of an analysis of the phase relationships between silica and various other oxides, a coating having the slurry composition 2.5Mn-33Ti-64.5Si was developed that is effective in the pressure range from 1 to 10 torr.

  7. Uranium Industry Annual, 1992

    SciTech Connect

    Not Available

    1993-10-28

    The Uranium Industry Annual provides current statistical data on the US uranium industry for the Congress, Federal and State agencies, the uranium and electric utility industries, and the public. The feature article, ``Decommissioning of US Conventional Uranium Production Centers,`` is included. Data on uranium raw materials activities including exploration activities and expenditures, resources and reserves, mine production of uranium, production of uranium concentrate, and industry employment are presented in Chapter 1. Data on uranium marketing activities including domestic uranium purchases, commitments by utilities, procurement arrangements, uranium imports under purchase contracts and exports, deliveries to enrichment suppliers, inventories, secondary market activities, utility market requirements, and uranium for sale by domestic suppliers are presented in Chapter 2.

  8. Silicide Coating Fabricated by HAPC/SAPS Combination to Protect Niobium Alloy from Oxidation.

    PubMed

    Sun, Jia; Fu, Qian-Gang; Guo, Li-Ping; Wang, Lu

    2016-06-22

    A combined silicide coating, including inner NbSi2 layer and outer MoSi2 layer, was fabricated through a two-step method. The NbSi2 was deposited on niobium alloy by halide activated pack cementation (HAPC) in the first step. Then, supersonic atmospheric plasma spray (SAPS) was applied to obtain the outer MoSi2 layer, forming a combined silicide coating. Results show that the combined coating possessed a compact structure. The phase constitution of the combined coating prepared by HAPC and SAPS was NbSi2 and MoSi2, respectively. The adhesion strength of the combined coating increased nearly two times than that for single sprayed coating, attributing to the rougher surface of the HAPC-bond layer whose roughness increased about three times than that of the grit-blast substrate. After exposure at 1200 °C in air, the mass increasing rate for single HAPC-silicide coating was 3.5 mg/cm(2) because of the pest oxidation of niobium alloy, whereas the combined coating displayed better oxidation resistance with a mass gain of only 1.2 mg/cm(2). Even more, the combined coating could significantly improve the antioxidation ability of niobium based alloy at 1500 °C. The good oxidation resistance of the combined silicide coating was attributed to the integrity of the combined coating and the continuous SiO2 protective scale provided by the oxidation of MoSi2. PMID:27243944

  9. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    SciTech Connect

    Yuryev, V. A. Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-05-28

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.

  10. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

    NASA Astrophysics Data System (ADS)

    Yuryev, V. A.; Chizh, K. V.; Chapnin, V. A.; Mironov, S. A.; Dubkov, V. P.; Uvarov, O. V.; Kalinushkin, V. P.; Senkov, V. M.; Nalivaiko, O. Y.; Novikau, A. G.; Gaiduk, P. I.

    2015-05-01

    Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si3N4/SiO2/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about -2%/ °C in the temperature interval from 25 to 50 °C.

  11. Durability of Silicide-Based Thermoelectric Modules at High Temperatures in Air

    NASA Astrophysics Data System (ADS)

    Funahashi, Ryoji; Matsumura, Yoko; Barbier, Tristan; Takeuchi, Tomonari; Suzuki, Ryosuke O.; Katsuyama, Shigeru; Yamamoto, Atsushi; Takazawa, Hiroyuki; Combe, Emmanuel

    2015-08-01

    Thermoelectric modules consisting of n-type Mn2.7Cr0.3Si4Al2 and p-type MnSi1.75 legs have been fabricated by use of composite pastes of Ag with Pt or Pd. For the module prepared by Ni-B plating and with Ag paste, the specific power density reached 370 mW/cm2 at a heat-source temperature of 873 K. Ni-B plating 5 μm thick on the surfaces of the silicide legs reduced both the internal resistance and degradation of the power generated by silicide modules at temperatures up to 873 K in air. This is because of oxidation of Al diffusing into the n-type legs and reaching the Ag electrodes on both the hot and cold sides. Ni-B plating can suppress Al diffusion into n-type legs. However, cracking was observed parallel to the contact surface in the middle of the Ni-B plating layer on the p-type legs. It was also found that incorporating Pt or Pd into the Ag paste effectively suppressed degradation of the contact resistance between the silicide legs and the Ag electrodes.

  12. Descriptive models of major uranium deposits in China - Some results of the Workshop on Uranium Resource Assessment sponsored by the International Atomic Energy Agency, Vienna, Austria, in cooperation with China National Nuclear Corporation, Beijing, and the U.S. Geological Survey, Denver, Colorado, and Reston, Virginia

    USGS Publications Warehouse

    Finch, W.I.; Feng, S.; Zuyi, C.; McCammon, R.B.

    1993-01-01

    Four major types of uranium deposits occur in China: granite, volcanic, sandstone, and carbonaceous-siliceous-pelitic rock. These types are major sources of uranium in many parts of the world and account for about 95 percent of Chinese production. Descriptive models for each of these types record the diagnostic regional and local geologic features of the deposits that are important to genetic studies, exploration, and resource assessment. A fifth type of uranium deposit, metasomatite, is also modeled because of its high potential for production. These five types of uranium deposits occur irregularly in five tectonic provinces distributed from the northwest through central to southern China. ?? 1993 Oxford University Press.

  13. URANIUM EXTRACTION

    DOEpatents

    Harrington, C.D.; Opie, J.V.

    1958-07-01

    The recovery of uranium values from uranium ore such as pitchblende is described. The ore is first dissolved in nitric acid, and a water soluble nitrate is added as a salting out agent. The resulting feed solution is then contacted with diethyl ether, whereby the bulk of the uranyl nitrate and a portion of the impurities are taken up by the ether. This acid ether extract is then separated from the aqueous raffinate, and contacted with water causing back extractioa of the uranyl nitrate and impurities into the water to form a crude liquor. After separation from the ether extract, this crude liquor is heated to about 118 deg C to obtain molten uranyl nitrate hexahydratc. After being slightly cooled the uranyl nitrate hexahydrate is contacted with acid free diethyl ether whereby the bulk of the uranyl nitrate is dissolved into the ethcr to form a neutral ether solution while most of the impurities remain in the aqueous waste. After separation from the aqueous waste, the resultant ether solution is washed with about l0% of its volume of water to free it of any dissolved impurities and is then contacted with at least one half its volume of water whereby the uranyl nitrate is extracted into the water to form an aqueous product solution.

  14. Structural and electrochemical properties of nanostructured nickel silicides by reduction and silicification of high-surface-area nickel oxide

    SciTech Connect

    Chen, Xiao; Zhang, Bingsen; Li, Chuang; Shao, Zhengfeng; Su, Dangsheng; Williams, Christopher T.; Liang, Changhai

    2012-03-15

    Graphical abstract: Nanostructured nickel silicides have been synthesized by reduction and silification of high-surface-area nickel oxide, and exhibited remarkably like-noble metal property, lower electric resistivity, and ferromagnetism at room temperature. Highlights: Black-Right-Pointing-Pointer NiSi{sub x} have been prepared by reduction and silification of high-surface-area NiO. Black-Right-Pointing-Pointer The structure of nickel silicides changed with increasing reaction temperature. Black-Right-Pointing-Pointer Si doping into nickel changed the magnetic properties of metallic nickel. Black-Right-Pointing-Pointer NiSi{sub x} have remarkably lower electric resistivity and like-noble metal property. -- Abstract: Nanostructured nickel silicides have been prepared by reduction and silicification of high-surface-area nickel oxide (145 m{sup 2} g{sup -1}) produced via precipitation. The prepared materials were characterized by nitrogen adsorption, X-ray diffraction, thermal analysis, FT-IR spectroscopy, scanning electron microscopy, transmission electron microscopy, magnetic and electrochemical measurements. The nickel silicide formation involves the following sequence: NiO (cubic) {yields} Ni (cubic) {yields} Ni{sub 2}Si (orthorhombic) {yields} NiSi (orthorhombic) {yields} NiSi{sub 2} (cubic), with particles growing from 13.7 to 21.3 nm. The nickel silicides are ferromagnetic at room temperature, and their saturation magnetization values change drastically with the increase of Si content. Nickel silicides have remarkably low electrical resistivity and noble metal-like properties because of a constriction of the Ni d band and an increase of the electronic density of states. The results suggest that such silicides are promising candidates as inexpensive yet functional materials for applications in electrochemistry as well as catalysis.

  15. PRODUCTION OF URANIUM TETRACHLORIDE

    DOEpatents

    Calkins, V.P.

    1958-12-16

    A process is descrlbed for the production of uranium tetrachloride by contacting uranlum values such as uranium hexafluoride, uranlum tetrafluoride, or uranium oxides with either aluminum chloride, boron chloride, or sodium alumlnum chloride under substantially anhydrous condltlons at such a temperature and pressure that the chlorldes are maintained in the molten form and until the uranium values are completely converted to uranlum tetrachloride.

  16. PRODUCTION OF URANIUM MONOCARBIDE

    DOEpatents

    Powers, R.M.

    1962-07-24

    A method of making essentially stoichiometric uranium monocarbide by pelletizing a mixture of uranium tetrafluoride, silicon, and carbon and reacting the mixture at a temperature of approximately 1500 to 1700 deg C until the reaction goes to completion, forming uranium monocarbide powder and volatile silicon tetrafluoride, is described. The powder is then melted to produce uranium monocarbide in massive form. (AEC)

  17. DECONTAMINATION OF URANIUM

    DOEpatents

    Feder, H.M.; Chellew, N.R.

    1958-02-01

    This patent deals with the separation of rare earth and other fission products from neutron bombarded uranium. This is accomplished by melting the uranium in contact with either thorium oxide, maguesium oxide, alumnum oxide, beryllium oxide, or uranium dioxide. The melting is preferably carried out at from 1150 deg to 1400 deg C in an inert atmosphere, such as argon or helium. During this treatment a scale of uranium dioxide forms on the uranium whtch contains most of the fission products.

  18. Discrete breathers in alpha-uranium

    NASA Astrophysics Data System (ADS)

    Murzaev, Ramil T.; Babicheva, Rita I.; Zhou, Kun; Korznikova, Elena A.; Fomin, Sergey Yu.; Dubinko, Vladimir I.; Dmitriev, Sergey V.

    2016-07-01

    Uranium is an important radioactive material used in the field of nuclear energy and it is interesting from the scientific point of view because it possesses unique structure and properties. There exist several experimental reports on anomalies of physical properties of uranium that have not been yet explained. Manley et al. [Phys. Rev. Lett. 96, 125501 (2006); Phys. Rev. B 77, 214305 (2008)] speculate that the excitation of discrete breathers (DBs) could be the reason for anisotropy of thermal expansion and for the deviation of heat capacity from the theoretical prediction in the high temperature range. In the present work, with the use of molecular dynamics, the existence of DBs in α-uranium is demonstrated and their properties are studied. It is found that DB frequency lies above the phonon band and increases with DB amplitude. DB is localized on half a dozen of atoms belonging to a straight atomic chain. DB in uranium, unlike DBs in fcc, bcc and hcp metals, is almost immobile. Thus, the DB reported in this study cannot contribute to thermal conductivity and the search for other types of DBs in α-uranium should be continued. Our results demonstrate that even metals with low-symmetry crystal lattices such as the orthorhombic lattice of α-uranium can support DBs.

  19. URANIUM DECONTAMINATION

    DOEpatents

    Buckingham, J.S.; Carroll, J.L.

    1959-12-22

    A process is described for reducing the extractability of ruthenium, zirconium, and niobium values into hexone contained in an aqueous nitric acid uranium-containing solution. The solution is made acid-deficient, heated to between 55 and 70 deg C, and at that temperature a water-soluble inorganic thiosulfate is added. By this, a precipitate is formed which carries the bulk of the ruthenium, and the remainder of the ruthenium as well as the zirconium and niobium are converted to a hexone-nonextractable form. The rutheniumcontaining precipitate can either be removed from the solu tion or it can be dissolved as a hexone-non-extractable compound by the addition of sodium dichromate prior to hexone extraction.

  20. Measurement of enriched uranium and uranium-aluminum fuel materials with the AWCC

    SciTech Connect

    Krick, M.S.; Menlove, H.O.; Zick, J.; Ikonomou, P.

    1985-05-01

    The active well coincidence counter (AWCC) was calibrated at the Chalk River Nuclear Laboratories (CRNL) for the assay of 93%-enriched fuel materials in three categories: (1) uranium-aluminum billets, (2) uranium-aluminum fuel elements, and (3) uranium metal pieces. The AWCC was a standard instrument supplied to the International Atomic Energy Agency under the International Safeguards Project Office Task A.51. Excellent agreement was obtained between the CRNL measurements and previous Los Alamos National Laboratory measurements on similar mockup fuel material. Calibration curves were obtained for each sample category. 2 refs., 8 figs., 15 tabs.

  1. Uranium industry annual 1998

    SciTech Connect

    1999-04-22

    The Uranium Industry Annual 1998 (UIA 1998) provides current statistical data on the US uranium industry`s activities relating to uranium raw materials and uranium marketing. It contains data for the period 1989 through 2008 as collected on the Form EIA-858, ``Uranium Industry Annual Survey.`` Data provides a comprehensive statistical characterization of the industry`s activities for the survey year and also include some information about industry`s plans and commitments for the near-term future. Data on uranium raw materials activities for 1989 through 1998, including exploration activities and expenditures, EIA-estimated reserves, mine production of uranium, production of uranium concentrate, and industry employment, are presented in Chapter 1. Data on uranium marketing activities for 1994 through 2008, including purchases of uranium and enrichment services, enrichment feed deliveries, uranium fuel assemblies, filled and unfilled market requirements, and uranium inventories, are shown in Chapter 2. The methodology used in the 1998 survey, including data edit and analysis, is described in Appendix A. The methodologies for estimation of resources and reserves are described in Appendix B. A list of respondents to the ``Uranium Industry Annual Survey`` is provided in Appendix C. The Form EIA-858 ``Uranium Industry Annual Survey`` is shown in Appendix D. For the readers convenience, metric versions of selected tables from Chapters 1 and 2 are presented in Appendix E along with the standard conversion factors used. A glossary of technical terms is at the end of the report. 24 figs., 56 tabs.

  2. Exploitation of a self-limiting process for reproducible formation of ultrathin Ni{sub 1-x}Pt{sub x} silicide films

    SciTech Connect

    Zhang Zhen; Zhu Yu; Rossnagel, Steve; Murray, Conal; Jordan-Sweet, Jean; Yang, Bin; Gaudet, Simon; Desjardins, Patrick; Kellock, Andrew J.; Ozcan, Ahmet; Zhang Shili; Lavoie, Christian

    2010-12-20

    This letter reports on a process scheme to obtain highly reproducible Ni{sub 1-x}Pt{sub x} silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction.

  3. Boron site preference in ternary Ta and Nb boron silicides

    SciTech Connect

    Khan, Atta U.; Nunes, Carlos A.; Coelho, Gilberto C.; Suzuki, Paulo A.; Grytsiv, Andriy; Bourree, Francoise; Rogl, Peter F.

    2012-06-15

    X-ray single crystal (XSC) and neutron powder diffraction data (NPD) were used to elucidate boron site preference for five ternary phases. Ta{sub 3}Si{sub 1-x}B{sub x} (x=0.112(4)) crystallizes with the Ti{sub 3}P-type (space group P4{sub 2}/n) with B-atoms sharing the 8g site with Si atoms. Ta{sub 5}Si{sub 3-x} (x=0.03(1); Cr{sub 5}B{sub 3}- type) crystallizes with space group I4/mcm, exhibiting a small amount of vacancies on the 4a site. Both, Ta{sub 5}(Si{sub 1-x}B{sub x}){sub 3}, x=0.568(3), and Nb{sub 5}(Si{sub 1-x}B{sub x}){sub 3}, x=0.59(2), are part of solid solutions of M{sub 5}Si{sub 3} with Cr{sub 5}B{sub 3}-type into the ternary M-Si-B systems (M=Nb or Ta) with B replacing Si on the 8h site. The D8{sub 8}-phase in the Nb-Si-B system crystallizes with the Ti{sub 5}Ga{sub 4}-type revealing the formula Nb{sub 5}Si{sub 3}B{sub 1-x} (x=0.292(3)) with B partially filling the voids in the 2b site of the Mn{sub 5}Si{sub 3} parent type. - Graphical abstract: The crystal structures of a series of compounds have been solved from X-ray single crystal diffractometry revealing details on the boron incorporation. Highlights: Black-Right-Pointing-Pointer Structure of a series of compounds have been solved by X-ray single crystal diffractometry. Black-Right-Pointing-Pointer Ta{sub 3}(Si{sub 1-x}B{sub x}) (x=0.112) crystallizes with the Ti{sub 3}P-type, B and Si atoms randomly share the 8g site. Black-Right-Pointing-Pointer Structure of Nb{sub 5}Si{sub 3}B{sub 1-x} (x=0.292; Ti{sub 5}Ga{sub 4}-type) was solved from NPD.

  4. Process for electroslag refining of uranium and uranium alloys

    DOEpatents

    Lewis, P.S. Jr.; Agee, W.A.; Bullock, J.S. IV; Condon, J.B.

    1975-07-22

    A process is described for electroslag refining of uranium and uranium alloys wherein molten uranium and uranium alloys are melted in a molten layer of a fluoride slag containing up to about 8 weight percent calcium metal. The calcium metal reduces oxides in the uranium and uranium alloys to provide them with an oxygen content of less than 100 parts per million. (auth)

  5. NiSi formation at the silicide/Si interface on the NiPt/Si system

    NASA Astrophysics Data System (ADS)

    Ottaviani, G.; Tu, K. N.; Chu, W. K.; Hung, L. S.; Mayer, J. W.

    1982-07-01

    Alloy films of NiPt were e-beam codeposited on n-type Si and annealed up to 700 °C in a purified- He ambient furnace. Silicide formation was monitored using MeV4 He Rutherford backscattering and glancing-angle x-ray diffraction. At low temperatures (300-350 °C), Ni segregates at the Si/ silicide interface and the first phases detected are NiSi and PtSi. At intermediate temperatures (400- 500 °C), there is further accumulation of Ni at the Si/silicide interface, and at later stages an incursion of Pt to the interface. The barrier height increase reflects the presence of Pt. At 700 °C, the Ni and Pt redistribute to form a uniform ternary.

  6. URANIUM RECOVERY PROCESS

    DOEpatents

    Bailes, R.H.; Long, R.S.; Olson, R.S.; Kerlinger, H.O.

    1959-02-10

    A method is described for recovering uranium values from uranium bearing phosphate solutions such as are encountered in the manufacture of phosphate fertilizers. The solution is first treated with a reducing agent to obtain all the uranium in the tetravalent state. Following this reduction, the solution is treated to co-precipitate the rcduced uranium as a fluoride, together with other insoluble fluorides, thereby accomplishing a substantially complete recovery of even trace amounts of uranium from the phosphate solution. This precipitate usually takes the form of a complex fluoride precipitate, and after appropriate pre-treatment, the uranium fluorides are leached from this precipitate and rccovered from the leach solution.

  7. PRODUCTION OF PURIFIED URANIUM

    DOEpatents

    Burris, L. Jr.; Knighton, J.B.; Feder, H.M.

    1960-01-26

    A pyrometallurgical method for processing nuclear reactor fuel elements containing uranium and fission products and for reducing uranium compound; to metallic uranium is reported. If the material proccssed is essentially metallic uranium, it is dissolved in zinc, the sulution is cooled to crystallize UZn/sub 9/ , and the UZn/sub 9/ is distilled to obtain uranium free of fission products. If the material processed is a uranium compound, the sollvent is an alloy of zinc and magnesium and the remaining steps are the same.

  8. NUSIMEP-7: uranium isotope amount ratios in uranium particles.

    PubMed

    Truyens, J; Stefaniak, E A; Aregbe, Y

    2013-11-01

    The Institute for Reference Materials and Measurements (IRMM) has extensive experience in the development of isotopic reference materials and the organization of interlaboratory comparisons (ILC) for nuclear measurements in compliance with the respective international guidelines (ISO Guide 34:2009 and ISO/IEC 17043:2010). The IRMM Nuclear Signatures Interlaboratory Measurement Evaluation Program (NUSIMEP) is an external quality control program with the objective of providing materials for measurements of trace amounts of nuclear materials in environmental matrices. Measurements of the isotopic ratios of the elements uranium and plutonium in small amounts, typical of those found in environmental samples, are required for nuclear safeguards and security, for the control of environmental contamination and for the detection of nuclear proliferation. The measurement results of participants in NUSIMEP are evaluated according to international guidelines in comparison to independent external certified reference values with demonstrated metrological traceability and uncertainty. NUSIMEP-7 focused on measurements of uranium isotope amount ratios in uranium particles aiming to support European Safeguards Directorate General for Energy (DG ENER), the International Atomic Energy Agency's (IAEA) network of analytical laboratories for environmental sampling (NWAL) and laboratories in the field of particle analysis. Each participant was provided two certified test samples: one with single and one with double isotopic enrichment. These NUSIMEP test samples were prepared by controlled hydrolysis of certified uranium hexafluoride in a specially designed aerosol deposition chamber at IRMM. Laboratories participating in NUSIMEP-7 received the test samples of uranium particles on two graphite disks with undisclosed isotopic ratio values n((234)U)/n((238)U), n((235)U)/n((238)U) and n((236)U)/n((238)U). The uranium isotope ratios had to be measured using their routine analytical

  9. NUSIMEP-7: uranium isotope amount ratios in uranium particles.

    PubMed

    Truyens, J; Stefaniak, E A; Aregbe, Y

    2013-11-01

    The Institute for Reference Materials and Measurements (IRMM) has extensive experience in the development of isotopic reference materials and the organization of interlaboratory comparisons (ILC) for nuclear measurements in compliance with the respective international guidelines (ISO Guide 34:2009 and ISO/IEC 17043:2010). The IRMM Nuclear Signatures Interlaboratory Measurement Evaluation Program (NUSIMEP) is an external quality control program with the objective of providing materials for measurements of trace amounts of nuclear materials in environmental matrices. Measurements of the isotopic ratios of the elements uranium and plutonium in small amounts, typical of those found in environmental samples, are required for nuclear safeguards and security, for the control of environmental contamination and for the detection of nuclear proliferation. The measurement results of participants in NUSIMEP are evaluated according to international guidelines in comparison to independent external certified reference values with demonstrated metrological traceability and uncertainty. NUSIMEP-7 focused on measurements of uranium isotope amount ratios in uranium particles aiming to support European Safeguards Directorate General for Energy (DG ENER), the International Atomic Energy Agency's (IAEA) network of analytical laboratories for environmental sampling (NWAL) and laboratories in the field of particle analysis. Each participant was provided two certified test samples: one with single and one with double isotopic enrichment. These NUSIMEP test samples were prepared by controlled hydrolysis of certified uranium hexafluoride in a specially designed aerosol deposition chamber at IRMM. Laboratories participating in NUSIMEP-7 received the test samples of uranium particles on two graphite disks with undisclosed isotopic ratio values n((234)U)/n((238)U), n((235)U)/n((238)U) and n((236)U)/n((238)U). The uranium isotope ratios had to be measured using their routine analytical

  10. Combustion synthesis of molybdenum silicides and borosilicides for ultrahigh-temperature structural applications

    NASA Astrophysics Data System (ADS)

    Alam, Mohammad Shafiul

    Molybdenum silicides and borosilicides are promising structural materials for gas-turbine power plants. A major challenge, however, is to simultaneously achieve high oxidation resistance and acceptable mechanical properties at high temperatures. For example, molybdenum disilicide (MoSi2) has excellent oxidation resistance and poor mechanical properties, while Mo-rich silicides such as Mo5Si3 (called T 1) have much better mechanical properties but poor oxidation resistance. One approach is based on the fabrication of MoSi2-T 1 composites that combine high oxidation resistance of MoSi2 and good mechanical properties of T1. Another approach involves the addition of boron to Mo-rich silicides for improving their oxidation resistance through the formation of a borosilicate surface layer. In particular, Mo 5SiB2 (called T2) phase is considered as an attractive material. In the thesis, MoSi2-T1 composites and materials based on T2 phase are obtained by mechanically activated SHS. Use of SHS compaction (quasi-isostatic pressing) significantly improves oxidation resistance of the obtained MoSi2-T1 composites. Combustion of Mo-Si-B mixtures for the formation of T2 phase becomes possible if the composition is designed for the addition of more exothermic reactions leading to the formation of molybdenum boride. These mixtures exhibit spin combustion, the characteristics of which are in good agreement with the spin combustion theory. Oxidation resistance of the obtained Mo-Si-B materials is independent on the concentration of Mo phase in the products so that the materials with a higher Mo content are preferable because of better mechanical properties. Also, T2 phase has been obtained by the chemical oven combustion synthesis technique.

  11. X-ray photoemission spectromicroscopy of titanium silicide formation in patterned microstructures

    SciTech Connect

    Singh, S.; Solak, H.; Cerrina, F.

    1997-04-01

    Titanium silicide has the lowest resistivity of all the refractory metal silicides and has good thermal stability as well as excellent compatibility with Al metallization. It is used as an intermediate buffer layer between W vias and the Si substrate to provide good electrical contact in ULSI technology, whose submicron patterned features form the basis of the integrated circuits of today and tomorrow, in the self aligned silicide (salicide) formation process. TiSi{sub 2} exists in two phases: a metastable C49 base-centered orthorhombic phase with specific resistivity of 60-90 {mu}{Omega}-cm that is formed at a lower temperature (formation anneal) and the stable 12-15 {mu}{Omega}-cm resistivity face-centered orthorhombic C54 phase into which C49 is transformed with a higher temperature (conversion anneal) step. C54 is clearly the target for low resistivity VLSI interconnects. However, it has been observed that when dimensions shrink below 1/mic (or when the Ti thickness drops below several hundred angstroms), the transformation of C49 into C54 is inhibited and agglomeration often occurs in fine lines at high temperatures. This results in a rise in resistivity due to incomplete transformation to C54 and because of discontinuities in the interconnect line resulting from agglomeration. Spectromicroscopy is an appropriate tool to study the evolution of the TiSi2 formation process because of its high resolution chemical imaging ability which can detect bonding changes even in the absence of changes in the relative amounts of species and because of the capability of studying thick {open_quotes}as is{close_quotes} industrial samples.

  12. Metal silicide/Si thin-film Schottky-diode bolometers

    NASA Astrophysics Data System (ADS)

    Yuryev, Vladimir A.; Chizh, Kirill V.; Chapnin, Valery V.; Kalinushkin, Victor P.

    2015-06-01

    Recently, we have demonstrated Ni silicide/poly-Si diodes as a budget alternative to SOI-diode temperature sensors in uncooled microbolometer FPAs. This paper introduces a solution still more suitable for industry: We have developed PtSi/poly-Si Schottky diodes for microbolometers. Ease of integration of the PtSi/poly-Si diode formation process into the CMOS technology, in analogy with the internal photoemission PtSi/Si IR FPAs, is the merit of the PtSi/poly-Si sensors. Now we demonstrate PtSi/poly-Si diode microbolometers and propose them as a promising solution for focal plane arrays.

  13. Optical response at 10.6 microns in tungsten silicide Schottky barrier diodes

    NASA Technical Reports Server (NTRS)

    Kumar, Sandeep; Boyd, Joseph T.; Jackson, Howard E.

    1987-01-01

    Optical response to radiation at a wavelength of 10.6 microns in tungsten silicide-silicon Schottky barrier diodes has been observed. Incident photons excite electrons by means of junction plasmon assisted inelastic electron tunneling. At 78 K, a peak in the second derivative of current versus junction bias voltage was observed at a voltage corresponding to the energy of photons having a wavelength of 10.6 microns. This peak increased with increasing incident laser power, saturating at the highest laser powers investigated.

  14. Ferromagnetic nickel silicide nanowires for isolating primary CD4+ T lymphocytes

    NASA Astrophysics Data System (ADS)

    Kim, Dong-Joo; Seol, Jin-Kyeong; Lee, Mi-Ri; Hyung, Jung-Hwan; Kim, Gil-Sung; Ohgai, Takeshi; Lee, Sang-Kwon

    2012-04-01

    Direct CD4+ T lymphocytes were separated from whole mouse splenocytes using 1-dimensional ferromagnetic nickel silicide nanowires (NiSi NWs). NiSi NWs were prepared by silver-assisted wet chemical etching of silicon and subsequent deposition and annealing of Ni. This method exhibits a separation efficiency of ˜93.5%, which is comparable to that of the state-of-the-art superparamagnetic bead-based cell capture (˜96.8%). Furthermore, this research shows potential for separation of other lymphocytes, B, natural killer and natural killer T cells, and even rare tumor cells simply by changing the biotin-conjugated antibodies.

  15. Organic geochemical analysis of sedimentary organic matter associated with uranium

    USGS Publications Warehouse

    Leventhal, J.S.; Daws, T.A.; Frye, J.S.

    1986-01-01

    Samples of sedimentary organic matter from several geologic environments and ages which are enriched in uranium (56 ppm to 12%) have been characterized. The three analytical techniqyes used to study the samples were Rock-Eval pyrolysis, pyrolysis-gas chromatography-mass spectrometry, and solid-state C-13 nuclear magnetic resonance (NMR) spectroscopy. In samples with low uranium content, the pyrolysis-gas chromatography products contain oxygenated functional groups (as hydroxyl) and molecules with both aliphatic and aromatic carbon atoms. These samples with low uranium content give measurable Rock-Eval hydrocarbon and organic-CO2 yields, and C-13 NMR values of > 30% aliphatic carbon. In contrast, uranium-rich samples have few hydrocarbon pyrolysis products, increased Rock-Eval organic-CO2 contents and > 70% aromatic carbon contents from C-13 NMR. The increase in aromaticity and decrease in hydrocarbon pyrolysis yield are related to the amount of uranium and the age of the uranium minerals, which correspond to the degree of radiation damage. The three analytical techniques give complementary results. Increase in Rock-Eval organic-CO2 yield correlates with uranium content for samples from the Grants uranium region. Calculations show that the amount of organic-CO2 corresponds to the quantity of uranium chemically reduced by the organic matter for the Grants uranium region samples. ?? 1986.

  16. NICKEL COATED URANIUM ARTICLE

    DOEpatents

    Gray, A.G.

    1958-10-01

    Nickel coatings on uranium and various methods of obtaining such coatings are described. Specifically disclosed are such nickel or nickel alloy layers as barriers between uranium and aluminum- silicon, chromium, or copper coatings.

  17. METHOD FOR PURIFYING URANIUM

    DOEpatents

    Knighton, J.B.; Feder, H.M.

    1960-04-26

    A process is given for purifying a uranium-base nuclear material. The nuclear material is dissolved in zinc or a zinc-magnesium alloy and the concentration of magnesium is increased until uranium precipitates.

  18. Uranium from phosphate ores

    SciTech Connect

    Hurst, F.J.

    1983-01-01

    The following topics are described briefly: the way phosphate fertilizers are made; how uranium is recovered in the phosphate industry; and how to detect covert uranium recovery operations in a phsophate plant.

  19. PREPARATION OF URANIUM HEXAFLUORIDE

    DOEpatents

    Lawroski, S.; Jonke, A.A.; Steunenberg, R.K.

    1959-10-01

    A process is described for preparing uranium hexafluoride from carbonate- leach uranium ore concentrate. The briquetted, crushed, and screened concentrate is reacted with hydrogen fluoride in a fluidized bed, and the uranium tetrafluoride formed is mixed with a solid diluent, such as calcium fluoride. This mixture is fluorinated with fluorine and an inert diluent gas, also in a fluidized bed, and the uranium hexafluoride obtained is finally purified by fractional distillation.

  20. PROCESS OF PURIFYING URANIUM

    DOEpatents

    Seaborg, G.T.; Orlemann, E.F.; Jensen, L.H.

    1958-12-23

    A method of obtaining substantially pure uranium from a uranium composition contaminated with light element impurities such as sodium, magnesium, beryllium, and the like is described. An acidic aqueous solution containing tetravalent uranium is treated with a soluble molybdate to form insoluble uranous molybdate which is removed. This material after washing is dissolved in concentrated nitric acid to obtaln a uranyl nitrate solution from which highly purified uranium is obtained by extraction with ether.

  1. PRODUCTION OF URANIUM TETRAFLUORIDE

    DOEpatents

    Shaw, W.E.; Spenceley, R.M.; Teetzel, F.M.

    1959-08-01

    A method is presented for producing uranium tetrafluoride from the gaseous hexafluoride by feeding the hexafluoride into a high temperature zone obtained by the recombination of molecularly dissociated hydrogen. The molal ratio of hydrogen to uranium hexnfluoride is preferably about 3 to 1. Uranium tetrafluoride is obtained in a finely divided, anhydrous state.

  2. Organometallic halide perovskite/barium di-silicide thin-film double-junction solar cells

    NASA Astrophysics Data System (ADS)

    Vismara, R.; Isabella, O.; Zeman, M.

    2016-04-01

    Barium di-silicide (BaSi2) is an abundant and inexpensive semiconductor with appealing opto-electrical properties. In this work we show that a 2-μm thick BaSi2-based thin-film solar cell can exhibit an implied photo-current density equal to 41.1 mA/cm2, which is higher than that of a state-of-the-art wafer-based c-Si hetero-junction solar cell. This performance makes BaSi2 an attractive absorber for high-performing thin-film and multi-junction solar cells. In particular, to assess the potential of barium di-silicide, we propose a thin-film double-junction solar cell based on organometallic halide perovskite (CH3NH3PbI3) as top absorber and BaSi2 as bottom absorber. The resulting modelled ultra-thin double-junction CH3NH3PbI3 / BaSi2 (< 2 μm) exhibits an implied total photo-current density equal to 38.65 mA/cm2 (19.84 mA/cm2 top cell, 18.81 mA/cm2 bottom cell) and conversion efficiencies up to 28%.

  3. Magnesium and Manganese Silicides For Efficient And Low Cost Thermo-Electric Power Generation

    SciTech Connect

    Trivedi, Sudhir B.; Kutcher, Susan W.; Rosemeier, Cory A.; Mayers, David; Singh, Jogender

    2013-12-02

    Thermoelectric Power Generation (TEPG) is the most efficient and commercially deployable power generation technology for harvesting wasted heat from such things as automobile exhausts, industrial furnaces, and incinerators, and converting it into usable electrical power. We investigated the materials magnesium silicide (Mg2Si) and manganese silicide (MnSi) for TEG. MgSi2 and MnSi are environmentally friendly, have constituent elements that are abundant in the earth's crust, non-toxic, lighter and cheaper. In Phase I, we successfully produced Mg2Si and MnSi material with good TE properties. We developed a novel technique to synthesize Mg2Si with good crystalline quality, which is normally very difficult due to high Mg vapor pressure and its corrosive nature. We produced n-type Mg2Si and p-type MnSi nanocomposite pellets using FAST. Measurements of resistivity and voltage under a temperature gradient indicated a Seebeck coefficient of roughly 120 V/K on average per leg, which is quite respectable. Results indicated however, that issues related to bonding resulted in high resistivity contacts. Determining a bonding process and bonding material that can provide ohmic contact from room temperature to the operating temperature is an essential part of successful device fabrication. Work continues in the development of a process for reproducibly obtaining low resistance electrical contacts.

  4. "Nanoparticle-in-alloy" approach to efficient thermoelectrics: silicides in SiGe.

    PubMed

    Mingo, N; Hauser, D; Kobayashi, N P; Plissonnier, M; Shakouri, A

    2009-02-01

    We present a "nanoparticle-in-alloy" material approach with silicide and germanide fillers leading to a potential 5-fold increase in the thermoelectric figure of merit of SiGe alloys at room temperature and 2.5 times increase at 900 K. Strong reductions in computed thermal conductivity are obtained for 17 different types of silicide nanoparticles. We predict the existence of an optimal nanoparticle size that minimizes the nanocomposite's thermal conductivity. This thermal conductivity reduction is much stronger and strikingly less sensitive to nanoparticle size for an alloy matrix than for a single crystal one. At the same time, nanoparticles do not negatively affect the electronic conduction properties of the alloy. The proposed material can be monolithically integrated into Si technology, enabling an unprecedented potential for micro refrigeration on a chip. High figure-of-merit at high temperatures (ZT approximately 1.7 at 900 K) opens up new opportunities for thermoelectric power generation and waste heat recovery at large scale.

  5. Geometry-dependent phase, stress state and electrical properties in nickel-silicide nanowires

    NASA Astrophysics Data System (ADS)

    Wang, C. C.; Lai, W. T.; Hsiao, Y. Y.; Chen, I. H.; George, T.; Li, P. W.

    2016-05-01

    We report that the geometry of single-crystalline Si nanowires (NWs) prior to salicidation at 500 °C is the key factor controlling the phase, stress state, and electrical resistivity of the resulting Ni x Si y NWs of width less than 100 nm. This is a radical departure from previous observations of a single phase formation for nickel silicides generated from the silicidation of bulk Si substrates. The phase transition from NiSi for large NWs ( W Si NW  =  250-450 nm) to Ni2Si for small NWs ( W Si NW  =  70-100 nm) is well correlated with the observed volumetric expansion and electrical resistivity variation with the NW width. For the extremely small dimensions of Ni x Si y NWs, we propose that the preeminent, kinetics-based Zhang and d’Heurle model for salicidation be modified to a more thermodynamically-governed, volume-expansion dependent Ni x Si y phase formation. A novel, plastic deformation mechanism is proposed to explain the observed, geometry-dependent Ni x Si y NW phase formation that also strongly influences the electrical performance of the NWs.

  6. Microstructure of the irradiated U 3Si 2/Al silicide dispersion fuel

    NASA Astrophysics Data System (ADS)

    Gan, J.; Keiser, D. D.; Miller, B. D.; Jue, J.-F.; Robinson, A. B.; Madden, J. W.; Medvedev, P. G.; Wachs, D. M.

    2011-12-01

    The silicide dispersion fuel of U 3Si 2/Al is recognized as the best performance fuel for many nuclear research and test reactors with up to 4.8 gU/cm 3 fuel loading. An irradiated U 3Si 2/Al dispersion fuel ( 235U ˜ 75%) from the high-flux side of a fuel plate (U0R040) from the Reduced Enrichment for Research and Test Reactors (RERTR)-8 test was characterized using transmission electron microscopy (TEM). The fuel was irradiated in the Advanced Test Reactor (ATR) for 105 days. The average irradiation temperature and fission density of the U 3Si 2 fuel particles for the TEM sample are estimated to be approximately 110 °C and 5.4 × 10 27 f/m 3. The characterization was performed using a 200-kV TEM. The U/Si ratio for the fuel particle and (Si + Al)/U for the fuel-matrix-interaction layer are approximately 1.1 and 4-10, respectively. The estimated average diameter, number density and volume fraction for small bubbles (<1 μm) in the fuel particle are ˜94 nm, 1.05 × 10 20 m -3 and ˜11%, respectively. The results and their implication on the performance of the U 3Si 2/Al silicide dispersion fuel are discussed.

  7. Kinetics of silicide formation over a wide range of heating rates spanning six orders of magnitude

    SciTech Connect

    Molina-Ruiz, Manel; Lopeandía, Aitor F.; Gonzalez-Silveira, Marta; Garcia, Gemma; Clavaguera-Mora, Maria T.; Peral, Inma; Rodríguez-Viejo, Javier

    2014-07-07

    Kinetic processes involving intermediate phase formation are often assumed to follow an Arrhenius temperature dependence. This behavior is usually inferred from limited data over narrow temperature intervals, where the exponential dependence is generally fully satisfied. However, direct evidence over wide temperature intervals is experimentally challenging and data are scarce. Here, we report a study of silicide formation between a 12 nm film of palladium and 15 nm of amorphous silicon in a wide range of heating rates, spanning six orders of magnitude, from 0.1 to 10{sup 5 }K/s, or equivalently more than 300 K of variation in reaction temperature. The calorimetric traces exhibit several distinct exothermic events related to interdiffusion, nucleation of Pd{sub 2}Si, crystallization of amorphous silicon, and vertical growth of Pd{sub 2}Si. Interestingly, the thickness of the initial nucleation layer depends on the heating rate revealing enhanced mass diffusion at the fastest heating rates during the initial stages of the reaction. In spite of this, the formation of the silicide strictly follows an Arrhenius temperature dependence over the whole temperature interval explored. A kinetic model is used to fit the calorimetric data over the complete heating rate range. Calorimetry is complemented by structural analysis through transmission electron microscopy and both standard and in-situ synchrotron X-ray diffraction.

  8. Mitigation of interfacial silicide reactions for electroplated CoPt films on Si substrates

    NASA Astrophysics Data System (ADS)

    Oniku, Ololade D.; Arnold, David P.

    2015-12-01

    We report in this paper the influence of film thickness on the material and magnetic properties of electroplated CoPt permanent magnets. Layers of CoPt magnets with film thicknesses ranging from 0.5 μm to 5 μm are deposited into photoresist molds (3.5 mm x 3.5 mm square and 5 μm x 50 μm arrays) on a (100)Si substrate coated with 10 nm/100 nm Ti/Cu adhesion/seed layer. Results show an unexpected reduction in magnetic properties for films below 2 μm thick. This effect is determined to be a consequence of metal-silicide reactions at the substrate interface during annealing leading to the formation of a non-magnetic layer at the interface. Subsequently, a TiN diffusion-barrier layer is added to inhibit the silicide reaction and thereby maintain strong magnetic properties (Hci ∼800 kA/m, Mr/Ms = 0.8) in micron- thick electroplated CoPt layers.

  9. The multiphoton ionization of uranium hexafluoride

    SciTech Connect

    Armstrong, D.P. . UEO Enrichment Technical Operations Div.)

    1992-05-01

    Multiphoton ionization (MPI) time-of-flight mass spectroscopy and photoelectron spectroscopy studies of UF{sub 6} have been conducted using focused light from the Nd:YAG laser fundamental ({lambda}=1064 nm) and its harmonics ({lambda}=532, 355, or 266 nm), as well as other wavelengths provided by a tunable dye laser. The MPI mass spectra are dominated by the singly and multiply charged uranium ions rather than by the UF{sub x}{sup +} fragment ions even at the lowest laser power densities at which signal could be detected. The laser power dependence of U{sup n+} ions signals indicates that saturation can occur for many of the steps required for their ionization. In general, the doubly-charged uranium ion (U{sup 2+}) intensity is much greater than that of the singly-charged uranium ion (U{sup +}). For the case of the tunable dye laser experiments, the U{sup n+} (n = 1- 4) wavelength dependence is relatively unstructured and does not show observable resonance enhancement at known atomic uranium excitation wavelengths. The dominance of the U{sup 2+} ion and the absence or very small intensities of UF{sub x}{sup +} fragments, along with the unsaturated wavelength dependence, indicate that mechanisms may exist other than ionization of bare U atoms after the stepwise photodissociation of F atoms from the parent molecule.

  10. URANIUM SEPARATION PROCESS

    DOEpatents

    Hyde, E.K.; Katzin, L.I.; Wolf, M.J.

    1959-07-14

    The separation of uranium from a mixture of uranium and thorium by organic solvent extraction from an aqueous solution is described. The uranium is separrted from an aqueous mixture of uranium and thorium nitrates 3 N in nitric acid and containing salting out agents such as ammonium nitrate, so as to bring ihe total nitrate ion concentration to a maximum of about 8 N by contacting the mixture with an immiscible aliphatic oxygen containing organic solvent such as diethyl carbinol, hexone, n-amyl acetate and the like. The uranium values may be recovered from the organic phase by back extraction with water.

  11. PRODUCTION OF URANIUM

    DOEpatents

    Spedding, F.H.; Wilhelm, H.A.; Keller, W.H.

    1958-04-15

    The production of uranium metal by the reduction of uranium tetrafluoride is described. Massive uranium metal of high purily is produced by reacting uranium tetrafluoride with 2 to 20% stoichiometric excess of magnesium at a temperature sufficient to promote the reaction and then mantaining the reaction mass in a sealed vessel at temperature in the range of 1150 to 2000 d C, under a superatomospheric pressure of magnesium for a period of time sufficient 10 allow separation of liquid uranium and liquid magnesium fluoride into separate layers.

  12. URANIUM RECOVERY PROCESS

    DOEpatents

    Yeager, J.H.

    1958-08-12

    In the prior art processing of uranium ores, the ore is flrst digested with nitric acid and filtered, and the uranium values are then extracted tom the filtrate by contacting with an organic solvent. The insoluble residue has been processed separately in order to recover any uranium which it might contain. The improvement consists in contacting a slurry, composed of both solution and residue, with the organic solvent prior to filtration. Tbe result is that uranium values contained in the residue are extracted along with the uranium values contained th the solution in one step.

  13. PROCESS OF RECOVERING URANIUM

    DOEpatents

    Carter, J.M.; Larson, C.E.

    1958-10-01

    A process is presented for recovering uranium values from calutron deposits. The process consists in treating such deposits to produce an oxidlzed acidic solution containing uranium together with the following imparities: Cu, Fe, Cr, Ni, Mn, Zn. The uranium is recovered from such an impurity-bearing solution by adjusting the pH of the solution to the range 1.5 to 3.0 and then treating the solution with hydrogen peroxide. This results in the precipitation of uranium peroxide which is substantially free of the metal impurities in the solution. The peroxide precipitate is then separated from the solution, washed, and calcined to produce uranium trioxide.

  14. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

    NASA Astrophysics Data System (ADS)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-01

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+-n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  15. Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction

    PubMed Central

    2013-01-01

    This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation. PMID:23663726

  16. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

    PubMed

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-03

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  17. Method for converting uranium oxides to uranium metal

    DOEpatents

    Duerksen, Walter K.

    1988-01-01

    A process is described for converting scrap and waste uranium oxide to uranium metal. The uranium oxide is sequentially reduced with a suitable reducing agent to a mixture of uranium metal and oxide products. The uranium metal is then converted to uranium hydride and the uranium hydride-containing mixture is then cooled to a temperature less than -100.degree. C. in an inert liquid which renders the uranium hydride ferromagnetic. The uranium hydride is then magnetically separated from the cooled mixture. The separated uranium hydride is readily converted to uranium metal by heating in an inert atmosphere. This process is environmentally acceptable and eliminates the use of hydrogen fluoride as well as the explosive conditions encountered in the previously employed bomb-reduction processes utilized for converting uranium oxides to uranium metal.

  18. Conversion and Evaluation of the University of Massachusetts Lowell Research Reactor From High-Enriched To Low-Enriched Uranium Fuel

    SciTech Connect

    Leo M. Bobek

    2003-11-19

    The process for converting the University of Massachusetts Lowell Research Reactor (UMLRR) from high-enrichment uranium (HEU) fuel to low-enrichment uranium (LEU) fuel began in 1988. Several years of design reviews, computational modeling, and thermal hydraulic analyses resulted in a preliminary reference core design and configuration based on 20 standard, MTR-type, flat-plate, 19.75% enriched, uranium silicide (u3Si2) fuel elements. A final safety analysis for the fuel conversion was submitted to the Nuclear Regulatory Commission (NRC) in 1993. The NRC made two additional requests for additional information and supplements were submitted in 1994 and 1997. The new UMLRR Reactor Supervisor initiated an effort to change the LEU reference core configuration to eliminate a complicated control rod modification needed for the smaller core.

  19. Risk assessment applications for determining cleanup limits for uranium in treated and untreated soils

    SciTech Connect

    Armstrong, A.Q.; Layton, D.W.; Rutz, E.E.

    1994-06-01

    Uranium-contaminated soils are present at various locations across the US where uranium was processed for nuclear fuels or atomic weapons. Important issues relative to such contamination include the assessment of potential health risks associated with human exposures to the residual uranium and the determination of safe levels of uranium in soils that have been treated by a given technology. This paper discusses various risk assessment considerations that must be dealt with when developing cleanup limits for uranium in treated and untreated soils. Key issues addressed include alternative land use scenarios, potential exposure pathways, characterization of the bioavailability of uranium compounds in food and water, a brief overview of health risks associated with uranium and its daughter products as well as a summary of considerations for development of risk-based cleanup limits for uranium in soils.

  20. 31 CFR 540.317 - Uranium feed; natural uranium feed.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Uranium feed; natural uranium feed... (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.317 Uranium feed; natural uranium feed....

  1. 31 CFR 540.317 - Uranium feed; natural uranium feed.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Uranium feed; natural uranium feed... (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.317 Uranium feed; natural uranium feed....

  2. 31 CFR 540.317 - Uranium feed; natural uranium feed.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Uranium feed; natural uranium feed... (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.317 Uranium feed; natural uranium feed....

  3. 31 CFR 540.317 - Uranium feed; natural uranium feed.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Uranium feed; natural uranium feed... (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.317 Uranium feed; natural uranium feed....

  4. 31 CFR 540.317 - Uranium feed; natural uranium feed.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Uranium feed; natural uranium feed... (Continued) OFFICE OF FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.317 Uranium feed; natural uranium feed....

  5. Isotopic fractionation of uranium in sandstone

    USGS Publications Warehouse

    Rosholt, J.N.; Shields, W.R.; Garner, E.L.

    1963-01-01

    Relatively unoxidized black uranium ores from sandstone deposits in the western United States show deviations in the uranium-235 to uranium-234 ratio throughout a range from 40 percent excess uranium-234 to 40 percent deficient uranium-234 with respect to a reference uranium-235 to uranium-234 ratio. The deficient uranium-234 is leached preferentially to uranium-238 and the excess uranium-234 is believed to result from deposition of uranium-234 enriched in solutions from leached deposits.

  6. Uranium hexafluoride public risk

    SciTech Connect

    Fisher, D.R.; Hui, T.E.; Yurconic, M.; Johnson, J.R.

    1994-08-01

    The limiting value for uranium toxicity in a human being should be based on the concentration of uranium (U) in the kidneys. The threshold for nephrotoxicity appears to lie very near 3 {mu}g U per gram kidney tissue. There does not appear to be strong scientific support for any other improved estimate, either higher or lower than this, of the threshold for uranium nephrotoxicity in a human being. The value 3 {mu}g U per gram kidney is the concentration that results from a single intake of about 30 mg soluble uranium by inhalation (assuming the metabolism of a standard person). The concentration of uranium continues to increase in the kidneys after long-term, continuous (or chronic) exposure. After chronic intakes of soluble uranium by workers at the rate of 10 mg U per week, the concentration of uranium in the kidneys approaches and may even exceed the nephrotoxic limit of 3 {mu}g U per gram kidney tissue. Precise values of the kidney concentration depend on the biokinetic model and model parameters assumed for such a calculation. Since it is possible for the concentration of uranium in the kidneys to exceed 3 {mu}g per gram tissue at an intake rate of 10 mg U per week over long periods of time, we believe that the kidneys are protected from injury when intakes of soluble uranium at the rate of 10 mg U per week do not continue for more than two consecutive weeks. For long-term, continuous occupational exposure to low-level, soluble uranium, we recommend a reduced weekly intake limit of 5 mg uranium to prevent nephrotoxicity in workers. Our analysis shows that the nephrotoxic limit of 3 {mu}g U per gram kidney tissues is not exceeded after long-term, continuous uranium intake at the intake rate of 5 mg soluble uranium per week.

  7. Understanding and Improving High-Temperature Structural Properties of Metal-Silicide Intermetallics

    SciTech Connect

    Bruce S. Kang

    2005-10-10

    The objective of this project was to understand and improve high-temperature structural properties of metal-silicide intermetallic alloys. Through research collaboration between the research team at West Virginia University (WVU) and Dr. J.H. Schneibel at Oak Ridge National Laboratory (ORNL), molybdenum silicide alloys were developed at ORNL and evaluated at WVU through atomistic modeling analyses, thermo-mechanical tests, and metallurgical studies. In this study, molybdenum-based alloys were ductilized by dispersing MgAl2O4 or MgO spinel particles. The addition of spinel particles is hypothesized to getter impurities such as oxygen and nitrogen from the alloy matrix with the result of ductility improvement. The introduction of fine dispersions has also been postulated to improve ductility by acting as a dislocation source or reducing dislocation pile-ups at grain boundaries. The spinel particles, on the other hand, can also act as local notches or crack initiation sites, which is detrimental to the alloy mechanical properties. Optimization of material processing condition is important to develop the desirable molybdenum alloys with sufficient room-temperature ductility. Atomistic analyses were conducted to further understand the mechanism of ductility improvement of the molybdenum alloys and the results showed that trace amount of residual oxygen may be responsible for the brittle behavior of the as-cast Mo alloys. For the alloys studied, uniaxial tensile tests were conducted at different loading rates, and at room and elevated temperatures. Thermal cycling effect on the mechanical properties was also studied. Tensile tests for specimens subjected to either ten or twenty thermal cycles were conducted. For each test, a follow-up detailed fractography and microstructural analysis were carried out. The test results were correlated to the size, density, distribution of the spinel particles and processing time. Thermal expansion tests were carried out using thermo

  8. Bioremediation of uranium contamination with enzymatic uranium reduction

    USGS Publications Warehouse

    Lovley, D.R.; Phillips, E.J.P.

    1992-01-01

    Enzymatic uranium reduction by Desulfovibrio desulfuricans readily removed uranium from solution in a batch system or when D. desulfuricans was separated from the bulk of the uranium-containing water by a semipermeable membrane. Uranium reduction continued at concentrations as high as 24 mM. Of a variety of potentially inhibiting anions and metals evaluated, only high concentrations of copper inhibited uranium reduction. Freeze-dried cells, stored aerobically, reduced uranium as fast as fresh cells. D. desulfuricans reduced uranium in pH 4 and pH 7.4 mine drainage waters and in uraniumcontaining groundwaters from a contaminated Department of Energy site. Enzymatic uranium reduction has several potential advantages over other bioprocessing techniques for uranium removal, the most important of which are as follows: the ability to precipitate uranium that is in the form of a uranyl carbonate complex; high capacity for uranium removal per cell; the formation of a compact, relatively pure, uranium precipitate.

  9. Preparation of uranium compounds

    DOEpatents

    Kiplinger, Jaqueline L; Montreal, Marisa J; Thomson, Robert K; Cantat, Thibault; Travia, Nicholas E

    2013-02-19

    UI.sub.3(1,4-dioxane).sub.1.5 and UI.sub.4(1,4-dioxane).sub.2, were synthesized in high yield by reacting turnings of elemental uranium with iodine dissolved in 1,4-dioxane under mild conditions. These molecular compounds of uranium are thermally stable and excellent precursor materials for synthesizing other molecular compounds of uranium including alkoxide, amide, organometallic, and halide compounds.

  10. Metals fact sheet - uranium

    SciTech Connect

    1996-04-01

    About 147 million pounds of this radioactive element are consumed annually by the worldwide nuclear power and weapons industries, as well as in the manufacture of ceramics and metal products. The heaviest naturally occurring element, uranium is typically found in intrusive granites, igneous and metamorphic veins, tabular sedimentary deposits, and unconformity-related structures. This article discusses the geology, exploitation, market, and applications of uranium and uranium ores.

  11. Process for continuous production of metallic uranium and uranium alloys

    DOEpatents

    Hayden, Jr., Howard W.; Horton, James A.; Elliott, Guy R. B.

    1995-01-01

    A method is described for forming metallic uranium, or a uranium alloy, from uranium oxide in a manner which substantially eliminates the formation of uranium-containing wastes. A source of uranium dioxide is first provided, for example, by reducing uranium trioxide (UO.sub.3), or any other substantially stable uranium oxide, to form the uranium dioxide (UO.sub.2). This uranium dioxide is then chlorinated to form uranium tetrachloride (UCl.sub.4), and the uranium tetrachloride is then reduced to metallic uranium by reacting the uranium chloride with a metal which will form the chloride of the metal. This last step may be carried out in the presence of another metal capable of forming one or more alloys with metallic uranium to thereby lower the melting point of the reduced uranium product. The metal chloride formed during the uranium tetrachloride reduction step may then be reduced in an electrolysis cell to recover and recycle the metal back to the uranium tetrachloride reduction operation and the chlorine gas back to the uranium dioxide chlorination operation.

  12. Process for continuous production of metallic uranium and uranium alloys

    DOEpatents

    Hayden, H.W. Jr.; Horton, J.A.; Elliott, G.R.B.

    1995-06-06

    A method is described for forming metallic uranium, or a uranium alloy, from uranium oxide in a manner which substantially eliminates the formation of uranium-containing wastes. A source of uranium dioxide is first provided, for example, by reducing uranium trioxide (UO{sub 3}), or any other substantially stable uranium oxide, to form the uranium dioxide (UO{sub 2}). This uranium dioxide is then chlorinated to form uranium tetrachloride (UCl{sub 4}), and the uranium tetrachloride is then reduced to metallic uranium by reacting the uranium chloride with a metal which will form the chloride of the metal. This last step may be carried out in the presence of another metal capable of forming one or more alloys with metallic uranium to thereby lower the melting point of the reduced uranium product. The metal chloride formed during the uranium tetrachloride reduction step may then be reduced in an electrolysis cell to recover and recycle the metal back to the uranium tetrachloride reduction operation and the chlorine gas back to the uranium dioxide chlorination operation. 4 figs.

  13. PROCESS FOR THE RECOVERY OF URANIUM FROM PHOSPHATIC ORE

    DOEpatents

    Long, R.L.

    1959-04-14

    A proccss is described for the recovery of uranium from phosphatic products derived from phosphatic ores. It has been discovered that certain alkyl phosphatic, derivatives can be employed in a direct solvent extraction operation to recover uranium from solid products, such as superphosphates, without first dissolving such solids. The organic extractants found suitable include alkyl derivatives of phosphoric, pyrophosphoric, phosof the derivative contains from 4 to 7 carbon atoms. A diluent such as kerosene is also used.

  14. Hydrogen generation systems and methods utilizing sodium silicide and sodium silica gel materials

    SciTech Connect

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2015-08-11

    Systems, devices, and methods combine thermally stable reactant materials and aqueous solutions to generate hydrogen and a non-toxic liquid by-product. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Springs and other pressurization mechanisms pressurize and deliver an aqueous solution to the reaction. A check valve and other pressure regulation mechanisms regulate the pressure of the aqueous solution delivered to the reactant fuel material in the reactor based upon characteristics of the pressurization mechanisms and can regulate the pressure of the delivered aqueous solution as a steady decay associated with the pressurization force. The pressure regulation mechanism can also prevent hydrogen gas from deflecting the pressure regulation mechanism.

  15. Growth and thermal properties of doped monocrystalline titanium-silicide based quantum dot superlattices

    NASA Astrophysics Data System (ADS)

    Savelli, G.; Silveira Stein, S.; Bernard-Granger, G.; Faucherand, P.; Montès, L.

    2016-04-01

    This paper presents the growth mechanism of a monocrystalline silicide quantum dot superlattices (QDSL) grown by reduced pressure chemical vapor deposition (RPCVD). QDSL are made of TiSi2-based nanodots scattered in a p-doped Si90Ge10 matrix. It is the first time that the growth of a p-type monocrystalline QDSL is presented. We focus here on the growth mechanisms of QDSL and the influence of nanostructuration on their thermal properties. Thus, the dots surface deposition, the dots embedding mechanisms and the final QDSL growths are studied. The crystallographic structures and chemical properties are presented, as well as the thermal properties. It will be shown that some specific mechanisms occur such as the formation of self-formed quantum well superlattices and the dopant accumulation near the quantum dots. Finally, a slight decrease of the QDSL thermal conductivity has been measured compared to the reference sample.

  16. Modified fused silicide coatings for tantalum (Ta-10W) reentry heat shields

    NASA Technical Reports Server (NTRS)

    Packer, C. M.; Perkins, R. A.

    1973-01-01

    Results are presented of a program of research to develop a reliable, high performance, fused slurry silicide coating for the Ta-10W alloy. The effort was directed toward developing new and improved formulations for use at 2600 to 2800 F (1700 to 1811 K) in an atmospheric reentry thermal protection system with a 100-mission capability. Based on a thorough characterization of isothermal and cyclic oxidation behavior, bend transition temperatures, room- and elevated-temperature tensile properties, and creep behavior, a 2.5 Mn-33Ti-64.5Si coating (designated MTS) provides excellent protection for the Ta-10W alloy in simulated reentry environments. An extensive analysis of the oxidation behavior and characteristics of the MTS coating in terms of fundamental mechanisms also is presented.

  17. Hydrogen generation systems utilizing sodium silicide and sodium silica gel materials

    SciTech Connect

    Wallace, Andrew P.; Melack, John M.; Lefenfeld, Michael

    2015-07-14

    Systems, devices, and methods combine reactant materials and aqueous solutions to generate hydrogen. The reactant materials can sodium silicide or sodium silica gel. The hydrogen generation devices are used in fuels cells and other industrial applications. One system combines cooling, pumping, water storage, and other devices to sense and control reactions between reactant materials and aqueous solutions to generate hydrogen. Multiple inlets of varied placement geometries deliver aqueous solution to the reaction. The reactant materials and aqueous solution are churned to control the state of the reaction. The aqueous solution can be recycled and returned to the reaction. One system operates over a range of temperatures and pressures and includes a hydrogen separator, a heat removal mechanism, and state of reaction control devices. The systems, devices, and methods of generating hydrogen provide thermally stable solids, near-instant reaction with the aqueous solutions, and a non-toxic liquid by-product.

  18. Friction and wear of radiofrequency-sputtered borides, silicides, and carbides

    NASA Technical Reports Server (NTRS)

    Brainard, W. A.; Wheeler, D. R.

    1978-01-01

    The friction and wear properties of several refractory compound coatings were examined. These compounds were applied to 440 C bearing steel surfaces by radiofrequency (RF) sputtering. The refractory compounds were the titanium and molybdenum borides, the titanium and molybdenum silicides, and the titanium, molybdenum, and boron carbides. Friction testing was done with a pin-on-disk wear apparatus at loads from 0.1 to 5.0 newtons. Generally, the best wear properties were obtained when the coatings were bias sputtered onto 440 C disks that had been preoxidized. Adherence was improved because of the better bonding of the coatings to the iron oxide formed during preoxidation. As a class the carbides provided wear protection to the highest loads. Titanium boride coatings provided low friction and good wear properties to moderate loads.

  19. Strain-promoted growth of Mn silicide nanowires on Si(001)

    NASA Astrophysics Data System (ADS)

    Miki, Kazushi; Liu, Hongjun; Owen, James H. G.; Renner, Christoph

    2011-03-01

    We have discovered a method to promote the growth of Mn silicide nanowires on the Si(001) at 450° C. Deposition of sub-monolayer quantities of Mn onto a Si(001) surface with a high density of Bi nanolines results in the formation of nanowires, 5-10 nm wide, and up to 600 nm long. These nanowires are never formed if the same growth procedure is followed in the absence of the Bi nanolines. The Haiku core of the Bi nanoline is known to induce short-range stress in the surrounding silicon surface, straining neighbouring dimers, and repelling step edges. We discuss the possible mechanisms for this effect, including the effect of the Bi nanolines on the surface stress tensor and alteration of the available diffusion channels on the surface. This research was partially supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Scientific Research, the Iketani Science and Technology Foundation.

  20. Comparative study of metallic silicide-germanide orthorhombic MnP systems.

    PubMed

    Connétable, Damien; Thomas, Olivier

    2013-09-01

    We present a comparative study of the structural, energetic, electronic and elastic properties of MX type MnP systems (where X=Si or Ge, and M=Pt, Pd or Ni) using first-principles calculations. The optimized ground state properties of these systems are in excellent agreement with the experimental values. A detailed comparative study of the elastic properties of polycrystalline structures is also presented. We analyze the relationship between the composition and the properties of the systems. Finally, we present the properties of NiSi1-xGex alloys. We show that these properties depend linearly on the Ge content of the alloy. This work has important consequences for semiconductor devices in which silicides, germanides and alloys thereof are used as contact materials.

  1. Fused slurry silicide coatings for columbium alloys reentry heat shields. Volume 1: Evaluation analysis

    NASA Technical Reports Server (NTRS)

    Fitzgerald, B.

    1973-01-01

    The R-512E (Si-20Cr-20Fe) fused slurry silicide coating process was optimized to coat full size (20in x 20in) single face rib and corrugation stiffened panels fabricated from FS-85 columbium alloy for 100 mission space shuttle heat shield applications. Structural life under simulated space shuttle lift-off stresses and reentry conditions demonstrated reuse capability well beyond 100 flights for R-512E coated FS-85 columbium heat shield panels. Demonstrated coating damage tolerance showed no immediate structural failure on exposure. The FS-85 columbium alloy was selected from five candidate alloys (Cb-752, C-129Y, WC-3015, B-66 and FS-85) based on the evaluation tests which have designed to determine: (1) change in material properties due to coating and reuse; (2) alloy tolerance to coating damage; (3) coating emittance characteristics under reuse conditions; and (4) new coating chemistries for improved coating life.

  2. Contacting nanowires and nanotubes with atomic precision for electronic transport

    SciTech Connect

    Qin, Shengyong; Hellstrom, Sondra L; Bao, Zhenan; Boyanov, Boyan; Li, An-Ping

    2012-01-01

    Making contacts to nanostructures with atomic precision is an important process in the bottom-up fabrication and characterization of electronic nanodevices. Existing contacting techniques use top-down lithography and chemical etching, but lack atomic precision and introduce the possibility of contamination. Here, we report that a field-induced emission process can be used to make local contacts onto individual nanowires and nanotubes with atomic spatial precision. The gold nano-islands are deposited onto nanostructures precisely by using a scanning tunneling microscope tip, which provides a clean and controllable method to ensure both electrically conductive and mechanically reliable contacts. To demonstrate the wide applicability of the technique, nano-contacts are fabricated on silicide atomic wires, carbon nanotubes, and copper nanowires. The electrical transport measurements are performed in situ by utilizing the nanocontacts to bridge the nanostructures to the transport probes.

  3. Forensic analysis of uranium

    SciTech Connect

    Stoyer, N.J.; Moody, K.J.

    1996-10-01

    As more and more offers for illicit {open_quotes}Black Market{close_quotes} radioactive materials are found, the forensic information contained within the radioactive material itself becomes more important. Many {open_quotes}Black Market{close_quotes} offers are for uranium in various forms and enrichments. Although most are scams, some countries have actually interdicted enriched uranium. We will discuss the forensic information that can be obtained from materials containing uranium along with examples of data that has been determined from analysis of uranium samples obtained from legitimate sources.

  4. METHOD OF ROLLING URANIUM

    DOEpatents

    Smith, C.S.

    1959-08-01

    A method is described for rolling uranium metal at relatively low temperatures and under non-oxidizing conditions. The method involves the steps of heating the uranium to 200 deg C in an oil bath, withdrawing the uranium and permitting the oil to drain so that only a thin protective coating remains and rolling the oil coated uranium at a temperature of 200 deg C to give about a 15% reduction in thickness at each pass. The operation may be repeated to accomplish about a 90% reduction without edge cracking, checking or any appreciable increase in brittleness.

  5. Uranium Dispersion & Dosimetry Model.

    SciTech Connect

    MICHAEL,; MOMENI, H.

    2002-03-22

    The Uranium Dispersion and Dosimetry (UDAD) program provides estimates of potential radiation exposure to individuals and to the general population in the vicinity of a uranium processing facility such as a uranium mine or mill. Only transport through the air is considered. Exposure results from inhalation, external irradiation from airborne and ground-deposited activity, and ingestion of foodstuffs. Individual dose commitments, population dose commitments, and environmental dose commitments are computed. The program was developed for application to uranium mining and milling; however, it may be applied to dispersion of any other pollutant.

  6. Uranium Dispersion & Dosimetry Model.

    2002-03-22

    The Uranium Dispersion and Dosimetry (UDAD) program provides estimates of potential radiation exposure to individuals and to the general population in the vicinity of a uranium processing facility such as a uranium mine or mill. Only transport through the air is considered. Exposure results from inhalation, external irradiation from airborne and ground-deposited activity, and ingestion of foodstuffs. Individual dose commitments, population dose commitments, and environmental dose commitments are computed. The program was developed for applicationmore » to uranium mining and milling; however, it may be applied to dispersion of any other pollutant.« less

  7. URANIUM RECOVERY PROCESS

    DOEpatents

    Kaufman, D.

    1958-04-15

    A process of recovering uranium from very low-grade ore residues is described. These low-grade uraniumcontaining hydroxide precipitates, which also contain hydrated silica and iron and aluminum hydroxides, are subjected to multiple leachings with aqueous solutions of sodium carbonate at a pH of at least 9. This leaching serves to selectively extract the uranium from the precipitate, but to leave the greater part of the silica, iron, and aluminum with the residue. The uranium is then separated from the leach liquor by the addition of an acid in sufficient amount to destroy the carbonate followed by the addition of ammonia to precipitate uranium as ammonium diuranate.

  8. PRODUCTION OF URANIUM

    DOEpatents

    Ruehle, A.E.; Stevenson, J.W.

    1957-11-12

    An improved process is described for the magnesium reduction of UF/sub 4/ to produce uranium metal. In the past, there have been undesirable premature reactions between the Mg and the bomb liner or the UF/sub 4/ before the actual ignition of the bomb reaction. Since these premature reactions impair the yield of uranium metal, they have been inhibited by forming a protective film upon the particles of Mg by reacting it with hydrated uranium tetrafluoride, sodium bifluoride, uranyl fluoride, or uranium trioxide. This may be accomplished by adding about 0.5 to 2% of the additive to the bomb charge.

  9. COATING URANIUM FROM CARBONYLS

    DOEpatents

    Gurinsky, D.H.; Storrs, S.S.

    1959-07-14

    Methods are described for making adherent corrosion resistant coatings on uranium metal. According to the invention, the uranium metal is heated in the presence of an organometallic compound such as the carbonyls of nickel, molybdenum, chromium, niobium, and tungsten at a temperature sufficient to decompose the metal carbonyl and dry plate the resultant free metal on the surface of the uranium metal body. The metal coated body is then further heated at a higher temperature to thermally diffuse the coating metal within the uranium bcdy.

  10. Discovery of Brownleeite: a New Manganese Silicide Mineral in an Interplanetary Dust Particle

    NASA Technical Reports Server (NTRS)

    Keller, Lindsay P.; Nakamura-Messenger, Keiko; Clemett, Simon J.; Messenger, Scott; Jones, John H.; Palma, Russell L.; Pepin, Robert O.; Klock, Wolfgang; Zolensky, Michael E.; Tatsuoka, Hirokazu

    2011-01-01

    The Earth accretes approximately 40,000 tons of cosmic dust annually, originating mainly from the disintegration of comets and collisions among asteroids. This cosmic dust, also known as interplanetary dust particles (IDPs), is a subject of intense interest since it is made of the original building blocks of our Solar System. Although the specific parent bodies of IDPs are unknown, the anhydrous chondritic-porous IDPs (CP-IDPs) subset has been potentially linked to a cometary source. The CP-IDPs are extremely primitive materials based on their unequilibrated mineralogy, C-rich chemistry, and anomalous isotopic signatures. In particular, some CP-IDPs escaped the thermal, aqueous and impact shock processing that has modified or destroyed the original mineralogy of meteorites. Thus, the CP-IDPs represent some of the most primitive solar system materials available for laboratory study. Most CP-IDPs are comprised of minerals that are common on Earth. However, in the course of an examination of one of the CP-IDPs, we encountered three sub-micrometer sized grains of manganese silicide (MnSi), a phase that has heretofore not been found in nature. In the seminar, we would like to focus on IDP studies and this manganese silicide phase that has been approved as the first new mineral identified from a comet by the International Mineralogical Association (IMA) in 2008. The mineral is named in honour of Donald E. Brownlee, an American astronomer and a founder of the field of cosmic dust research who is the principal investigator of the NASA Stardust Mission that collected dust samples from Comet 81P/Wild-2 and returned them to Earth. Much of our current view and understanding of the early solar system would not exist without the pioneering work of professor Don Brownlee in the study of IDPs.

  11. High temperature behavior of metallic inclusions in uranium dioxide

    SciTech Connect

    Yang, R.L.

    1980-08-01

    The object of this thesis was to construct a temperature gradient furnace to simulate the thermal conditions in the reactor fuel and to study the migration of metallic inclusions in uranium oxide under the influence of temperature gradient. No thermal migration of molybdenum and tungsten inclusions was observed under the experimental conditions. Ruthenium inclusions, however, dissolved and diffused atomically through grain boundaries in slightly reduced uranium oxide. An intermetallic compound (probably URu/sub 3/) was formed by reaction of Ru and UO/sub 2-x/. The diffusivity and solubility of ruthenium in uranium oxide were measured.

  12. URANIUM LEACHING AND RECOVERY PROCESS

    DOEpatents

    McClaine, L.A.

    1959-08-18

    A process is described for recovering uranium from carbonate leach solutions by precipitating uranium as a mixed oxidation state compound. Uranium is recovered by adding a quadrivalent uranium carbon;te solution to the carbonate solution, adjusting the pH to 13 or greater, and precipitating the uranium as a filterable mixed oxidation state compound. In the event vanadium occurs with the uranium, the vanadium is unaffected by the uranium precipitation step and remains in the carbonate solution. The uranium-free solution is electrolyzed in the cathode compartment of a mercury cathode diaphragm cell to reduce and precipitate the vanadium.

  13. Uranium industry annual 1993

    SciTech Connect

    Not Available

    1994-09-01

    Uranium production in the United States has declined dramatically from a peak of 43.7 million pounds U{sub 3}O{sub 8} (16.8 thousand metric tons uranium (U)) in 1980 to 3.1 million pounds U{sub 3}O{sub 8} (1.2 thousand metric tons U) in 1993. This decline is attributed to the world uranium market experiencing oversupply and intense competition. Large inventories of uranium accumulated when optimistic forecasts for growth in nuclear power generation were not realized. The other factor which is affecting U.S. uranium production is that some other countries, notably Australia and Canada, possess higher quality uranium reserves that can be mined at lower costs than those of the United States. Realizing its competitive advantage, Canada was the world`s largest producer in 1993 with an output of 23.9 million pounds U{sub 3}O{sub 8} (9.2 thousand metric tons U). The U.S. uranium industry, responding to over a decade of declining market prices, has downsized and adopted less costly and more efficient production methods. The main result has been a suspension of production from conventional mines and mills. Since mid-1992, only nonconventional production facilities, chiefly in situ leach (ISL) mining and byproduct recovery, have operated in the United States. In contrast, nonconventional sources provided only 13 percent of the uranium produced in 1980. ISL mining has developed into the most cost efficient and environmentally acceptable method for producing uranium in the United States. The process, also known as solution mining, differs from conventional mining in that solutions are used to recover uranium from the ground without excavating the ore and generating associated solid waste. This article describes the current ISL Yang technology and its regulatory approval process, and provides an analysis of the factors favoring ISL mining over conventional methods in a declining uranium market.

  14. Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method

    SciTech Connect

    Won, Youngdo; Park, Sangwook; Koo, Jaehyoung; Kim, Seokhoon; Kim, Jinwoo; Jeon, Hyeongtag

    2005-12-26

    A remote plasma atomic layer deposition (RPALD) method has been applied to grow a hafnium oxide thin film on the Si substrate. The deposition process was monitored by in situ XPS and the as-deposited structure and chemical bonding were examined by TEM and XPS. The in situ XPS measurement showed the presence of a hafnium silicate phase at the initial stage of the RPALD process up to the 20th cycle and indicated that no hafnium silicide was formed. The initial hafnium silicate was amorphous and grew to a thickness of approximately 2 nm. Based on these results and model reactions for silicate formation, we proposed an initial growth mechanism that includes adatom migration at nascent step edges. Density functional theory calculations on model compounds indicate that the hafnium silicate is thermodynamically favored over the hafnium silicide by as much as 250 kJ/mol.

  15. Uranium: A Dentist's perspective.

    PubMed

    Toor, R S S; Brar, G S

    2012-01-01

    Uranium is a naturally occurring radionuclide found in granite and other mineral deposits. In its natural state, it consists of three isotopes (U-234, U-235 and U-238). On an average, 1% - 2% of ingested uranium is absorbed in the gastrointestinal tract in adults. The absorbed uranium rapidly enters the bloodstream and forms a diffusible ionic uranyl hydrogen carbonate complex (UO2HCO3+) which is in equilibrium with a nondiffusible uranyl albumin complex. In the skeleton, the uranyl ion replaces calcium in the hydroxyapatite complex of the bone crystal. Although in North India, there is a risk of radiological toxicity from orally ingested natural uranium, the principal health effects are chemical toxicity. The skeleton and kidney are the primary sites of uranium accumulation. Acute high dose of uranyl nitrate delays tooth eruption, and mandibular growth and development, probably due to its effect on target cells. Based on all previous research and recommendations, the role of a dentist is to educate the masses about the adverse effects of uranium on the overall as well as the dental health. The authors recommended that apart from the discontinuation of the addition of uranium to porcelain, the Public community water supplies must also comply with the Environmental Protection Agency (EPA) standards of uranium levels being not more than 30 ppb (parts per billion).

  16. DECONTAMINATION OF URANIUM

    DOEpatents

    Spedding, F.H.; Butler, T.A.

    1962-05-15

    A process is given for separating fission products from uranium by extracting the former into molten aluminum. Phase isolation can be accomplished by selectively hydriding the uranium at between 200 and 300 deg C and separating the hydride powder from coarse particles of fissionproduct-containing aluminum. (AEC)

  17. Uranium and Thorium

    ERIC Educational Resources Information Center

    Finch, Warren I.

    1978-01-01

    The results of President Carter's policy on non-proliferation of nuclear weapons are expected to slow the growth rate in energy consumption, put the development of the breeder reactor in question, halt plans to reprocess and recycle uranium and plutonium, and expand facilities to supply enriched uranium. (Author/MA)

  18. Uranium: A Dentist's perspective

    PubMed Central

    Toor, R. S. S.; Brar, G. S.

    2012-01-01

    Uranium is a naturally occurring radionuclide found in granite and other mineral deposits. In its natural state, it consists of three isotopes (U-234, U-235 and U-238). On an average, 1% – 2% of ingested uranium is absorbed in the gastrointestinal tract in adults. The absorbed uranium rapidly enters the bloodstream and forms a diffusible ionic uranyl hydrogen carbonate complex (UO2HCO3+) which is in equilibrium with a nondiffusible uranyl albumin complex. In the skeleton, the uranyl ion replaces calcium in the hydroxyapatite complex of the bone crystal. Although in North India, there is a risk of radiological toxicity from orally ingested natural uranium, the principal health effects are chemical toxicity. The skeleton and kidney are the primary sites of uranium accumulation. Acute high dose of uranyl nitrate delays tooth eruption, and mandibular growth and development, probably due to its effect on target cells. Based on all previous research and recommendations, the role of a dentist is to educate the masses about the adverse effects of uranium on the overall as well as the dental health. The authors recommended that apart from the discontinuation of the addition of uranium to porcelain, the Public community water supplies must also comply with the Environmental Protection Agency (EPA) standards of uranium levels being not more than 30 ppb (parts per billion). PMID:24478959

  19. Uranium dioxide electrolysis

    DOEpatents

    Willit, James L.; Ackerman, John P.; Williamson, Mark A.

    2009-12-29

    This is a single stage process for treating spent nuclear fuel from light water reactors. The spent nuclear fuel, uranium oxide, UO.sub.2, is added to a solution of UCl.sub.4 dissolved in molten LiCl. A carbon anode and a metallic cathode is positioned in the molten salt bath. A power source is connected to the electrodes and a voltage greater than or equal to 1.3 volts is applied to the bath. At the anode, the carbon is oxidized to form carbon dioxide and uranium chloride. At the cathode, uranium is electroplated. The uranium chloride at the cathode reacts with more uranium oxide to continue the reaction. The process may also be used with other transuranic oxides and rare earth metal oxides.

  20. METHOD FOR PURIFYING URANIUM

    DOEpatents

    Kennedy, J.W.; Segre, E.G.

    1958-08-26

    A method is presented for obtaining a compound of uranium in an extremely pure state and in such a condition that it can be used in determinations of the isotopic composition of uranium. Uranium deposited in calutron receivers is removed therefrom by washing with cold nitric acid and the resulting solution, coataining uranium and trace amounts of various impurities, such as Fe, Ag, Zn, Pb, and Ni, is then subjected to various analytical manipulations to obtain an impurity-free uranium containing solution. This solution is then evaporated on a platinum disk and the residue is ignited converting it to U2/sub 3//sub 8/. The platinum disk having such a thin film of pure U/sub 2/O/sub 8/ is suitable for use with isotopic determination techaiques.

  1. URANIUM PRECIPITATION PROCESS

    DOEpatents

    Thunaes, A.; Brown, E.A.; Smith, H.W.; Simard, R.

    1957-12-01

    A method for the recovery of uranium from sulfuric acid solutions is described. In the present process, sulfuric acid is added to the uranium bearing solution to bring the pH to between 1 and 1.8, preferably to about 1.4, and aluminum metal is then used as a reducing agent to convert hexavalent uranium to the tetravalent state. As the reaction proceeds, the pH rises amd a selective precipitation of uranium occurs resulting in a high grade precipitate. This process is an improvement over the process using metallic iron, in that metallic aluminum reacts less readily than metallic iron with sulfuric acid, thus avoiding consumption of the reducing agent and a raising of the pH without accomplishing the desired reduction of the hexavalent uranium in the solution. Another disadvantage to the use of iron is that positive ferric ions will precipitate with negative phosphate and arsenate ions at the pH range employed.

  2. 16. VIEW OF THE ENRICHED URANIUM RECOVERY SYSTEM. ENRICHED URANIUM ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    16. VIEW OF THE ENRICHED URANIUM RECOVERY SYSTEM. ENRICHED URANIUM RECOVERY PROCESSED RELATIVELY PURE MATERIALS AND SOLUTIONS AND SOLID RESIDUES WITH RELATIVELY LOW URANIUM CONTENT. URANIUM RECOVERY INVOLVED BOTH SLOW AND FAST PROCESSES. (4/4/66) - Rocky Flats Plant, General Manufacturing, Support, Records-Central Computing, Southern portion of Plant, Golden, Jefferson County, CO

  3. Fabrication and characterization of periodic arrays of epitaxial Ni-silicide nanocontacts on (1 1 0)Si

    NASA Astrophysics Data System (ADS)

    Cheng, S. L.; Chang, L. H.; Chuang, C. F.; Chen, H.

    2015-07-01

    In this study, we report on the fabrication and characterization of periodic Ni and Ni-silicide nanocontact arrays on (1 1 0)Si substrates. From transmission electron microscopy and selected-area electron diffraction analysis, it is found that the epitaxial NiSi2 is the first and the only silicide phase formed in the nanoscale Ni contact/(1 1 0)Si sample after annealing at a temperature as low as 300 °C, demonstrating that the nanoscale Ni contact is more favorable for the epitaxial growth of NiSi2 phase on (1 1 0)Si. The orientation relationship between the epitaxial NiSi2 nanocontacts and the (1 1 0)Si substrate is identified as [1 1 0]NiSi2//[1 1 0]Si and (1 bar 1 1 bar)NiSi2//(1 bar 1 1 bar)Si. For the samples annealed at higher temperatures, all the epitaxial NiSi2 nanocontacts formed on (1 1 0)Si are anisotropic in shape and elongated along the crystallographic < 1 1 bar 0 > directions. The observed results can be attributed to the higher surface area to volume ratio of Ni nanocontacts and the faster growth rate along the <1 1 0> directions than along other directions. The size and periodicity of the nanocontacts can be readily controlled by adjusting the diameter of the colloidal nanosphere template. The self-assembled approach proposed here will provide the capability to fabricate other highly-ordered metal silicide nanocontact arrays and may offer potential applications in constructing silicide-based nanodevices.

  4. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

    PubMed Central

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-01-01

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. PMID:26632759

  5. NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains

    NASA Astrophysics Data System (ADS)

    Mizuo, Mariko; Yamaguchi, Tadashi; Pagès, Xavier; Vanormelingen, Koen; Smits, Martin; Granneman, Ernst; Fujisawa, Masahiko; Hattori, Nobuyoshi

    2015-04-01

    Pt-doped Ni (NiPt) silicide agglomeration in terms of NiSi crystal orientation, Pt segregation at the NiSi/Si interface, and residual stress is studied for the first time. In the annealing of Ni monosilicide (NiSi), the growth of NiSi grains whose NiSi b-axes are aligned normal to Si(001) [NiSi(010) ∥ Si(001)] with increasing Pt segregation at the NiSi/Si interface owing to a high annealing temperature was observed. The residual stress in NiSi(010) ∥ Si(001) grains also increases with increasing annealing temperature. Furthermore, the recrystallization of NiSi(010) ∥ Si(001) grains with increasing residual stress continues through additional annealing after NiSi formation. After the annealing of NiSi(010) ∥ Si(001) grains with their strain at approximately 2%, the start of NiPt silicide agglomerates accompanied by stress relaxation was observed. This preferential recrystallization of NiSi(010) ∥ Si(001) grains with increasing residual stress is considered to enhance the NiPt silicide agglomeration.

  6. Phase formation and morphological stability of ultrathin Ni-Co-Pt silicide films formed on Si(100)

    SciTech Connect

    Xu, Peng; Wu, Dongping; Kubart, Tomas; Gao, Xindong; Zhang, Shi-Li

    2014-05-15

    Ultrathin Ni, Co, and Pt films, each no more than 4 nm in thickness, as well as their various combinations are employed to investigate the competing growth of epitaxial Co{sub 1-y}Ni{sub y}Si{sub 2} films against polycrystalline Pt{sub 1-z}Ni{sub z}Si. The phase formation critically affects the morphological stability of the resulting silicide films, with the epitaxial films being superior to the polycrystalline ones. Any combination of those metals improves the morphological stability with reference to their parent individual metal silicide films. When Ni, Co, and Pt are all included, the precise initial location of Pt does little to affect the final phase formation in the silicide films and the epitaxial growth of Co{sub 1-x}Ni{sub x}Si{sub 2} films is always perturbed, in accordance to thermodynamics that shows a preferential formation of Pt{sub 1-z}Ni{sub z}Si over that of Co{sub 1-y}Ni{sub y}Si{sub 2}.

  7. Pack cementation Cr-Al coating of steels and Ge-doped silicide coating of Cr-Nb alloy

    SciTech Connect

    He, Y.R.; Zheng, M.H.; Rapp, R.A.

    1995-08-01

    Carbon steels or low-alloy steels used in utility boilers, heat exchangers, petrochemical plants and coal gasification systems are subjected to high temperature corrosion attack such as oxidation, sulfidation and hot corrosion. The pack cementation coating process has proven to be an economical and effective method to enhance the corrosion resistance by modifying the surface composition of steels. With the aid of a computer program, STEPSOL, pack cementation conditions to produce a ferrite Cr-Al diffusion coating on carbon-containing steels by using elemental Cr and Al powders have been calculated and experimentally verified. The cyclic oxidation kinetics for the Cr-Al coated steels are presented. Chromium silicide can maintain high oxidation resistance up to 1100{degrees}C by forming a SiO{sub 2} protective scale. Previous studies at Ohio State University have shown that the cyclic oxidation resistance of MOSi{sub 2} and TiSi{sub 2} can be further improved by Ge addition introduced during coating growth. The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating in a single processing step for the ORNL-developed Cr-Nb advanced intermetallic alloy. The oxidation behavior of the silicide-coated Cr-Nb alloy was excellent: weight gain of about 1 mg/cm{sup 2} upon oxidation at 1100{degrees}C in air for 100 hours.

  8. Atomic vapor laser isotope separation

    NASA Astrophysics Data System (ADS)

    Paisner, J. A.

    1988-07-01

    Atomic Vapor Laser Isotope Separation (AVLIS) is a general and powerful technique applicable to many elements. A major present application to the enrichement of uranium for lightwater power reactor fuel has been under development at the Lawrence Livermore National Laboratory since 1973. In June 1985, the Department of Energy announced the selection of AVLIS as the technology to meet future U.S. needs for the internationally competitive production of uranium separative work. Major features of the AVLIS process will be discussed with consideration of the process figures of merit.

  9. Uranium Pyrophoricity Phenomena and Prediction

    SciTech Connect

    DUNCAN, D.R.

    2000-04-20

    We have compiled a topical reference on the phenomena, experiences, experiments, and prediction of uranium pyrophoricity for the Hanford Spent Nuclear Fuel Project (SNFP) with specific applications to SNFP process and situations. The purpose of the compilation is to create a reference to integrate and preserve this knowledge. Decades ago, uranium and zirconium fires were commonplace at Atomic Energy Commission facilities, and good documentation of experiences is surprisingly sparse. Today, these phenomena are important to site remediation and analysis of packaging, transportation, and processing of unirradiated metal scrap and spent nuclear fuel. Our document, bearing the same title as this paper, will soon be available in the Hanford document system [Plys, et al., 2000]. This paper explains general content of our topical reference and provides examples useful throughout the DOE complex. Moreover, the methods described here can be applied to analysis of potentially pyrophoric plutonium, metal, or metal hydride compounds provided that kinetic data are available. A key feature of this paper is a set of straightforward equations and values that are immediately applicable to safety analysis.

  10. PROCESS OF RECOVERING URANIUM

    DOEpatents

    Kilner, S.B.

    1959-12-29

    A method is presented for separating and recovering uranium from a complex mixure of impurities. The uranium is dissolved to produce an aqueous acidic solution including various impurities. In accordance with one method, with the uranium in the uranyl state, hydrogen cyanide is introduced into the solution to complex the impurities. Subsequently, ammonia is added to the solution to precipitate the uraniunn as ammonium diuranate away from the impurities in the solution. Alternatively, the uranium is precipitated by adding an alkaline metal hydroxide. In accordance with the second method, the uranium is reduced to the uranous state in the solution. The reduced solution is then treated with solid alkali metal cyanide sufficient to render the solution about 0.1 to 1.0 N in cyanide ions whereat cyanide complex ions of the metal impurities are produced and the uranium is simultaneously precipituted as uranous hydroxide. Alternatively, hydrogen cyanide may be added to the reduced solution and the uranium precipitated subsequently by adding ammonium hydroxide or an alkali metal hydroxide. Other refinements of the method are also disclosed.

  11. 75 FR 44817 - Notice of Availability of Uranium Enrichment Fuel Cycle Facility Inspection Reports Regarding...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-29

    ... satisfies the requirements of 10 CFR 70.32(k) and section 193(c) of the Atomic Energy Act of 1954, as amended. The introduction of uranium hexafluoride into any module of the National Enrichment Facility...

  12. 76 FR 67765 - Notice of Availability of Uranium Enrichment Fuel Cycle Facility's Inspection Reports Regarding...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-02

    ... requirements of Title 10 of the Code of Federal Regulations (10 CFR) 70.32 (k) and Section 193(c) of the Atomic Energy Act of 1954, as amended. The introduction of uranium hexafluoride into any module of the...

  13. Synthesis and characterization of barium silicide (BaSi2) nanowire arrays for potential solar applications

    NASA Astrophysics Data System (ADS)

    Pokhrel, Ankit; Samad, Leith; Meng, Fei; Jin, Song

    2015-10-01

    In order to utilize nanostructured materials for potential solar and other energy-harvesting applications, scalable synthetic techniques for these materials must be developed. Herein we use a vapor phase conversion approach to synthesize nanowire (NW) arrays of semiconducting barium silicide (BaSi2) in high yield for the first time for potential solar applications. Dense arrays of silicon NWs obtained by metal-assisted chemical etching were converted to single-crystalline BaSi2 NW arrays by reacting with Ba vapor at about 930 °C. Structural characterization by X-ray diffraction and high-resolution transmission electron microscopy confirm that the converted NWs are single-crystalline BaSi2. The optimal conversion reaction conditions allow the phase-pure synthesis of BaSi2 NWs that maintain the original NW morphology, and tuning the reaction parameters led to a controllable synthesis of BaSi2 films on silicon substrates. The optical bandgap and electrochemical measurements of these BaSi2 NWs reveal a bandgap and carrier concentrations comparable to previously reported values for BaSi2 thin films.In order to utilize nanostructured materials for potential solar and other energy-harvesting applications, scalable synthetic techniques for these materials must be developed. Herein we use a vapor phase conversion approach to synthesize nanowire (NW) arrays of semiconducting barium silicide (BaSi2) in high yield for the first time for potential solar applications. Dense arrays of silicon NWs obtained by metal-assisted chemical etching were converted to single-crystalline BaSi2 NW arrays by reacting with Ba vapor at about 930 °C. Structural characterization by X-ray diffraction and high-resolution transmission electron microscopy confirm that the converted NWs are single-crystalline BaSi2. The optimal conversion reaction conditions allow the phase-pure synthesis of BaSi2 NWs that maintain the original NW morphology, and tuning the reaction parameters led to a controllable

  14. Recovery of uranium values

    DOEpatents

    Brown, K. B.; Crouse, Jr., D. J.; Moore, J. G.

    1959-03-10

    A liquid-liquid extraction method is presented for recovering uranium values from an aqueous acidic solution by means of certain high molecular weight amine fn the amine classes of primary, secondary, heterocyclic secondary, tertiary, or heterocyclic tertiary. The uranium bearing aqueous acidic solution is contacted with the selected anine dissolved in a nonpolar waterimmiscible organfc solvent such as kerosene. The uranium which is substantially completely extracted by the organic phase may be stripped therefrom by water, and recovered from the aqueous phase by treatment into ammonia to precipitate ammonium diuranate.

  15. RECOVERY OF URANIUM VALUES

    DOEpatents

    Brown, K.B.; Crouse, D.J. Jr.; Moore, J.G.

    1959-03-10

    A liquid-liquid extraction method is presented for recovering uranium values from an aqueous acidic solution by means of certain high molecular weight amine in the amine classes of primary, secondary, heterocyclic secondary, tertiary, or heterocyclic tertiary. The uranium bearing aqueous acidic solution is contacted with the selected amine dissolved in a nonpolar water-immiscible organic solvent such as kerosene. The uranium which is substantially completely exiracted by the organic phase may be stripped therefrom by waters and recovered from the aqueous phase by treatment into ammonia to precipitate ammonium diuranate.

  16. Thermodynamic properties of α-uranium

    NASA Astrophysics Data System (ADS)

    Ren, Zhiyong; Wu, Jun; Ma, Rong; Hu, Guichao; Luo, Chao

    2016-11-01

    The lattice constants and equilibrium atomic volume of α-uranium were calculated by Density Functional Theory (DFT). The first principles calculation results of the lattice for α-uranium are in agreement with the experimental results well. The thermodynamic properties of α-uranium from 0 to 900 K and 0-100 GPa were calculated with the quasi-harmonic Debye model. Volume, bulk modulus, entropy, Debye temperature, thermal expansion coefficient and the heat capacity of α-uranium were calculated. The calculated results show that the bulk modulus and Debye temperature increase with the increasing pressure at a given temperature while decreasing with the increasing temperature at a given pressure. Volume, entropy, thermal expansion coefficient and the heat capacity decrease with the increasing pressure while increasing with the increasing temperature. The theoretical results of entropy, Debye temperature, thermal expansion coefficient and the heat capacity show good agreement with the general trends of the experimental values. The constant-volume heat capacity shows typical Debye T3 power-law behavior at low temperature limit and approaches to the classical asymptotic Dulong-Petit limit at high temperature limit.

  17. Uranium purchases report 1993

    SciTech Connect

    Not Available

    1994-08-10

    Data reported by domestic nuclear utility companies in their responses to the 1991 through 1993 ``Uranium Industry Annual Survey,`` Form EIA-858, Schedule B,`` Uranium Marketing Activities,`` are provided in response to the requirements in the Energy Policy Act 1992. Appendix A contains an explanation of Form EIA-858 survey methodologies with emphasis on the processing of Schedule B data. Additional information published in this report not included in Uranium Purchases Report 1992, includes a new data table. Presented in Table 1 are US utility purchases of uranium and enrichment services by origin country. Also, this report contains additional purchase information covering average price and contract duration. Table 2 is an update of Table 1 and Table 3 is an update of Table 2 from the previous year`s report. The report contains a glossary of terms.

  18. URANIUM RECOVERY PROCESS

    DOEpatents

    Stevenson, J.W.; Werkema, R.G.

    1959-07-28

    The recovery of uranium from magnesium fluoride slag obtained as a by- product in the production of uranium metal by the bomb reduction prccess is presented. Generally the recovery is accomplished by finely grinding the slag, roasting ihe ground slag air, and leaching the roasted slag with a hot, aqueous solution containing an excess of the sodium bicarbonate stoichiometrically required to form soluble uranium carbonate complex. The roasting is preferably carried out at between 425 and 485 deg C for about three hours. The leaching is preferably done at 70 to 90 deg C and under pressure. After leaching and filtration the uranium may be recovered from the clear leach liquor by any desired method.

  19. Uranium concentrations in asparagus

    SciTech Connect

    Tiller, B.L.; Poston, T.M.

    1992-05-01

    Concentrations of uranium were determined in asparagus collected from eight locations near and ten locations on the Hanford Site southcentral Washington State. Only one location (Sagemoor) had samples with elevated concentrations. The presence of elevated uranium in asparagus at Sagemoor may be explained by the elevated levels in irrigation water. These levels of uranium are comparable to levels previously reported upstream and downstream of the 300-FF-1 Operable Unit on the Hanford Site (0.0008 {mu}g/g), but were below the 0.020-{mu}g/g level reported for brush collected at Sagemoor in a 1982 study. Concentrations at all other onsite and offsite sample locations were considerably lower than concentrations reported immediately upstream and downstream of the 300-FF-1 Operable Unit. Using an earlier analysis of the uranium concentrations in asparagus collected from the Hanford Site constitutes a very small fraction of the US Department of Energy effective dose equivalent limit of 100 mrem.

  20. 300 AREA URANIUM CONTAMINATION

    SciTech Connect

    BORGHESE JV

    2009-07-02

    {sm_bullet} Uranium fuel production {sm_bullet} Test reactor and separations experiments {sm_bullet} Animal and radiobiology experiments conducted at the. 331 Laboratory Complex {sm_bullet} .Deactivation, decontamination, decommissioning,. and demolition of 300 Area facilities

  1. PURIFICATION OF URANIUM FUELS

    DOEpatents

    Niedrach, L.W.; Glamm, A.C.

    1959-09-01

    An electrolytic process of refining or decontaminating uranium is presented. The impure uranium is made the anode of an electrolytic cell. The molten salt electrolyte of this cell comprises a uranium halide such as UF/sub 4/ or UCl/sub 3/ and an alkaline earth metal halide such as CaCl/sub 2/, BaF/sub 2/, or BaCl/sub 2/. The cathode of the cell is a metal such as Mn, Cr, Co, Fe, or Ni which forms a low melting eutectic with U. The cell is operated at a temperature below the melting point of U. In operation the electrodeposited uranium becomes alloyed with the metal of the cathode, and the low melting alloy thus formed drips from the cathode.

  2. URANIUM EXTRACTION PROCESS

    DOEpatents

    Baldwin, W.H.; Higgins, C.E.

    1958-12-16

    A process is described for recovering uranium values from acidic aqueous solutions containing hexavalent uranium by contacting the solution with an organic solution comprised of a substantially water-immiscible organlc diluent and an organic phosphate to extract the uranlum values into the organic phase. Carbon tetrachloride and a petroleum hydrocarbon fraction, such as kerosene, are sultable diluents to be used in combination with organlc phosphates such as dibutyl butylphosphonate, trlbutyl phosphine oxide, and tributyl phosphate.

  3. ANODIC TREATMENT OF URANIUM

    DOEpatents

    Kolodney, M.

    1959-02-01

    A method is presented for effecting eloctrolytic dissolution of a metallic uranium article at a uniform rate. The uranium is made the anode in an aqueous phosphoric acid solution containing nitrate ions furnished by either ammonium nitrate, lithium nitrate, sodium nitrate, or potassium nitrate. A stainless steel cathode is employed and electrolysls carried out at a current density of about 0.1 to 1 ampere per square inch.

  4. URANIUM SEPARATION PROCESS

    DOEpatents

    Lyon, W.L.

    1962-04-17

    A method of separating uranium oxides from PuO/sub 2/, ThO/sub 2/, and other actinide oxides is described. The oxide mixture is suspended in a fused salt melt and a chlorinating agent such as chlorine gas or phosgene is sparged through the suspension. Uranium oxides are selectively chlorinated and dissolve in the melt, which may then be filtered to remove the unchlorinated oxides of the other actinides. (AEC)

  5. Formation of the Thermoelectric Candidate Chromium Silicide by Use of a Pack-Cementation Process

    NASA Astrophysics Data System (ADS)

    Stathokostopoulos, D.; Chaliampalias, D.; Tarani, E.; Theodorakakos, A.; Giannoulatou, V.; Polymeris, G. S.; Pavlidou, E.; Chrissafis, K.; Hatzikraniotis, E.; Paraskevopoulos, K. M.; Vourlias, G.

    2014-10-01

    Transition-metal silicides are reported to be good candidates for thermoelectric applications because of their thermal and structural stability, high electrical conductivity, and generation of thermoelectric power at elevated temperatures. Chromium disilicide (CrSi2) is a narrow-gap semiconductor and a potential p-type thermoelectric material up to 973 K with a band gap of 0.30 eV. In this work, CrSi2 was formed from Si wafers by use of a two-step, pack-cementation, chemical diffusion method. Several deposition conditions were used to investigate the effect of temperature and donor concentration on the structure of the final products. Scanning electron microscopy and x-ray diffraction analysis were performed for phase identification, and thermal stability was evaluated by means of thermogravimetric measurements. The results showed that after the first step, chromizing, the structure of the products was a mixture of several Cr-Si phases, depending on the donor (Cr) concentration during the deposition process. After the second step, siliconizing, the pure CrSi2 phase was formed as a result of Si enrichment of the initial Cr-Si phases. It was also revealed that this compound has thermoelectric properties similar to those reported elsewhere. Moreover, it was found to have exceptional chemical stability even at temperatures up to 1273 K.

  6. Enhanced power factor of higher manganese silicide via melt spin synthesis method

    SciTech Connect

    Shi, Xiaoya; Li, Qiang; Shi, Xun; Chen, Lidong; Li, Yulong; He, Ying

    2014-12-28

    We report on the thermoelectric properties of the higher manganese silicide MnSi{sub 1.75} synthesized by means of a one-step non-equilibrium method. The ultrahigh cooling rate generated from the melt-spin technique is found to be effective in reducing second phases, which are inevitable during the traditional solid state diffusion processes. Aside from being detrimental to thermoelectric properties, second phases skew the revealing of the intrinsic properties of this class of materials, for example, the optimal level of carrier concentration. With this melt-spin sample, we are able to formulate a simple model based on a single parabolic band that can well describe the carrier concentration dependence of the Seebeck coefficient and power factor of the data reported in the literature. An optimal carrier concentration around 5 × 10{sup 20 }cm{sup −3} at 300 K is predicted according to this model. The phase-pure melt-spin sample shows the largest power factor at high temperature, resulting in the highest zT value among the three samples in this paper.

  7. Mechanical Alloying and Spark Plasma Sintering of Higher Manganese Silicides for Thermoelectric Applications

    NASA Astrophysics Data System (ADS)

    Sadia, Yatir; Dinnerman, Liron; Gelbstein, Yaniv

    2013-07-01

    The present challenges in the energy crisis require finding new ways to reduce consumption of fossil fuels. Thermoelectrics can help reduce fuel consumption by producing electricity from waste heat. The higher manganese silicides (HMS) have shown promise in this field as inexpensive, nontoxic, and highly stable p-type thermoelectric materials. One of the production techniques for HMS is mechanical alloying by ball milling. In this research the effect of the ball-milling duration and speed on the phases produced was studied. Mn and Si powders were milled at speeds of 200 RPM to 800 RPM for 1 h to 7 h. X-ray diffraction (XRD) results of the samples prepared using mechanical alloying show deterioration into the MnSi phase. The sample that underwent 5 h of milling at 800 RPM showed the greatest amount of HMS phase and was subsequently spark plasma sintered. The sample showed insufficient thermoelectric properties ( ZT ≈ 0.1 at 450°C), compared with either solid-state reaction samples showing ZT ≈ 0.4 or cast samples showing ZT ≈ 0.63 at 450°C. The reduced ZT values of the mechanically alloyed and spark-plasma-sintered samples were attributed to the high relative amount of MnSi phase. The correlation between the relative amount of MnSi and the transport properties is described in detail.

  8. Enhanced power factor of higher manganese silicide via melt spin synthesis method

    DOE PAGES

    Shi, Xiaoya; Shi, Xun; Li, Yulong; He, Ying; Chen, Lidong; Li, Qiang

    2014-12-30

    We report on the thermoelectric properties of the Higher Manganese Silicide MnSi₁.₇₅ (HMS) synthesized by means of a one-step non-equilibrium method. The ultrahigh cooling rate generated from the melt-spin technique is found to be effective in reducing second phases, which are inevitable during the traditional solid state diffusion processes. Aside from being detrimental to thermoelectric properties, second phases skew the revealing of the intrinsic properties of this class of materials, for example the optimal level of carrier concentration. With this melt-spin sample, we are able to formulate a simple model based on a single parabolic band that can well describemore » the carrier concentration dependence of the Seebeck coefficient and power factor of the data reported in the literature. An optimal carrier concentration around 5x10²⁰ cm⁻³ at 300 K is predicted according to this model. The phase-pure melt-spin sample shows the largest power factor at high temperature, resulting in the highest zT value among the three samples in this paper; the maximum value is superior to those reported in the literatures.« less

  9. The ability of silicide coating to delay the catastrophic oxidation of vanadium under severe conditions

    NASA Astrophysics Data System (ADS)

    Chaia, N.; Mathieu, S.; Rouillard, F.; Vilasi, M.

    2015-02-01

    V-4Cr-4Ti vanadium alloy is a potential cladding material for sodium-cooled fast-neutron reactors (SFRs). However, its affinity for oxygen and the subsequent embrittlement that oxygen induces causes a need for an oxygen diffusion barrier, which can be obtained by manufacturing a multi-layered silicide coating. The present work aims to evaluate the effects of thermal cycling (using a cyclic oxidation device) and tensile and compressive stresses (using the three-point flexure test) on the coated alloy system. Tests were performed in air up to 1100 °C, which is 200 °C higher than the accidental temperature for SFR applications. The results showed that the VSi2 coating was able to protect the vanadium substrate from oxidation for more than 400 1-h cycles between 1100 °C and room temperature. The severe bending applied to the coated alloy at 950 °C using a load of 75 MPa did not lead to specimen breakage. It can be suggested that the VSi2 coating has mechanical properties compatible with the V-4Cr-4Ti alloy for SFR applications.

  10. Enhanced power factor of higher manganese silicide via melt spin synthesis method

    SciTech Connect

    Shi, Xiaoya; Shi, Xun; Li, Yulong; He, Ying; Chen, Lidong; Li, Qiang

    2014-12-30

    We report on the thermoelectric properties of the Higher Manganese Silicide MnSi₁.₇₅ (HMS) synthesized by means of a one-step non-equilibrium method. The ultrahigh cooling rate generated from the melt-spin technique is found to be effective in reducing second phases, which are inevitable during the traditional solid state diffusion processes. Aside from being detrimental to thermoelectric properties, second phases skew the revealing of the intrinsic properties of this class of materials, for example the optimal level of carrier concentration. With this melt-spin sample, we are able to formulate a simple model based on a single parabolic band that can well describe the carrier concentration dependence of the Seebeck coefficient and power factor of the data reported in the literature. An optimal carrier concentration around 5x10²⁰ cm⁻³ at 300 K is predicted according to this model. The phase-pure melt-spin sample shows the largest power factor at high temperature, resulting in the highest zT value among the three samples in this paper; the maximum value is superior to those reported in the literatures.

  11. Approaching the Minimum Thermal Conductivity in Rhenium-Substituted Higher Manganese Silicides

    SciTech Connect

    Chen, Xi; Girard, S. N.; Meng, F.; Lara-Curzio, Edgar; Jin, S; Goodenough, J. B.; Zhou, J. S.; Shi, L

    2014-01-01

    Higher manganese silicides (HMS) made of earth-abundant and non-toxic elements are regarded as promising p-type thermoelectric materials because their complex crystal structure results in low lattice thermal conductivity. It is shown here that the already low thermal conductivity of HMS can be reduced further to approach the minimum thermal conductivity via partial substitu- tion of Mn with heavier rhenium (Re) to increase point defect scattering. The solubility limit of Re in the obtained RexMn1 xSi1.8 is determined to be about x = 0.18. Elemental inhomogeneity and the formation of ReSi1.75 inclusions with 50 200 nm size are found within the HMS matrix. It is found that the power factor does not change markedly at low Re content of x 0.04 before it drops considerably at higher Re contents. Compared to pure HMS, the reduced lattice thermal conductivity in RexMn1 xSi1.8 results in a 25% increase of the peak figure of merit ZT to reach 0.57 0.08 at 800 K for x = 0.04. The suppressed thermal conductivity in the pure RexMn1 xSi1.8 can enable further investigations of the ZT limit of this system by exploring different impurity doping strategies to optimize the carrier concentration and power factor.

  12. Topological nodal-line semimetals in alkaline-earth stannides, germanides, and silicides

    NASA Astrophysics Data System (ADS)

    Huang, Huaqing; Liu, Jianpeng; Vanderbilt, David; Duan, Wenhui

    2016-05-01

    Based on first-principles calculations and an effective Hamiltonian analysis, we systematically investigate the electronic and topological properties of alkaline-earth compounds A X2 (A =Ca , Sr, Ba; X =Si , Ge, Sn). Taking BaSn2 as an example, we find that when spin-orbit coupling is ignored, these materials are three-dimensional topological nodal-line semimetals characterized by a snakelike nodal loop in three-dimensional momentum space. Drumheadlike surface states emerge either inside or outside the loop circle on the (001) surface depending on surface termination, while complicated double-drumhead-like surface states appear on the (010) surface. When spin-orbit coupling is included, the nodal line is gapped and the system becomes a topological insulator with Z2 topological invariants (1;001). Since spin-orbit coupling effects are weak in light elements, the nodal-line semimetal phase is expected to be achievable in some alkaline-earth germanides and silicides.

  13. Method for the recovery of uranium values from uranium tetrafluoride

    DOEpatents

    Kreuzmann, A.B.

    1982-10-27

    The invention is a novel method for the recovery of uranium from dry, particulate uranium tetrafluoride. In one aspect, the invention comprises reacting particulate uranium tetrafluoride and calcium oxide in the presence of gaseous oxygen to effect formation of the corresponding alkaline earth metal uranate and alkaline earth metal fluoride. The product uranate is highly soluble in various acidic solutions whereas the product fluoride is virtually insoluble therein. The product mixture of uranate and alkaline earth metal fluoride is contacted with a suitable acid to provide a uranium-containing solution, from which the uranium is recovered. The invention can achieve quantitative recovery of uranium in highly pure form.

  14. Method for the recovery of uranium values from uranium tetrafluoride

    DOEpatents

    Kreuzmann, Alvin B.

    1983-01-01

    The invention is a novel method for the recovery of uranium from dry, particulate uranium tetrafluoride. In one aspect, the invention comprises reacting particulate uranium tetrafluoride and calcium oxide in the presence of gaseous oxygen to effect formation of the corresponding alkaline earth metal uranate and alkaline earth metal fluoride. The product uranate is highly soluble in various acidic solutions wherein the product fluoride is virtually insoluble therein. The product mixture of uranate and alkaline earth metal fluoride is contacted with a suitable acid to provide a uranium-containing solution, from which the uranium is recovered. The invention can achieve quantitative recovery of uranium in highly pure form.

  15. Pribram uranium district

    SciTech Connect

    1990-11-01

    Pribram is one of the largest and richest vein uranium districts in the world. The Pribram district has accounted for about 60 percent of Czechoslovakia`s total uranium production. The Pribram uranium district is located about 60 kilometers southwest of Prague, in Cezechslovakia`s central Bohemia region. This district contains perigranitic, monometallic, vein-type uranium deposits. The deposits are within a northeast-southwest elongated area, about 20 kilometers long and 1-2 kilometers wide, located between Oboriste in the northeast and Tresko in the southwest. Several thousand veins have been discovered; about 1,600 have been mined. Most of the veins are grouped in clusters, which are intense accumulations of veins paralleling or intersecting each other within a narrow segment. Until this year, all uranium production was exported to the USSR, with only the amount required for Czechoslovakia`s nuclear power stations being returned (as fabricated fuel). Most of Czechoslovakia`s present and future uranium production will come from sandstone deposits in the North Bohemian Cretaceous Basin, such as Hamr and Straz.

  16. A density functional theory study of uranium-doped thoria and uranium adatoms on the major surfaces of thorium dioxide

    NASA Astrophysics Data System (ADS)

    Shields, Ashley E.; Santos-Carballal, David; de Leeuw, Nora H.

    2016-05-01

    Thorium dioxide is of significant research interest for its use as a nuclear fuel, particularly as part of mixed oxide fuels. We present the results of a density functional theory (DFT) study of uranium-substituted thorium dioxide, where we found that increasing levels of uranium substitution increases the covalent nature of the bonding in the bulk ThO2 crystal. Three low Miller index surfaces have been simulated and we propose the Wulff morphology for a ThO2 particle and STM images for the (100), (110), and (111) surfaces studied in this work. We have also calculated the adsorption of a uranium atom and the U adatom is found to absorb strongly on all three surfaces, with particular preference for the less stable (100) and (110) surfaces, thus providing a route to the incorporation of uranium into a growing thoria particle.

  17. Isotopic Analysis of Uranium in NIST SRM Glass by Femtosecond Laser Ablation

    SciTech Connect

    Duffin, Andrew M.; Hart, Garret L.; Hanlen, Richard C.; Eiden, Gregory C.

    2013-05-19

    We employed femtosecond Laser Ablation Multicollector Inductively Coupled Mass Spectrometry for the 11 determination of uranium isotope ratios in a series of standard reference material glasses (NIST 610, 612, 614, and 12 616). This uranium concentration in this series of SRM glasses is a combination of isotopically natural uranium in 13 the materials used to make the glass matrix and isotopically depleted uranium added to increase the uranium 14 elemental concentration across the series. Results for NIST 610 are in excellent agreement with literature values. 15 However, other than atom percent 235U, little information is available for the remaining glasses. We present atom 16 percent and isotope ratios for 234U, 235U, 236U, and 238U for all four glasses. Our results show deviations from the 17 certificate values for the atom percent 235U, indicating the need for further examination of the uranium isotopes in 18 NIST 610-616. Our results are fully consistent with a two isotopic component mixing between the depleted 19 uranium spike and natural uranium in the bulk glass.

  18. Analysis of beryllium and depleted uranium: An overview of detection methods in aerosols and soils

    SciTech Connect

    Camins, I.; Shinn, J.H.

    1988-06-01

    We conducted a survey of commercially available methods for analysis of beryllium and depleted uranium in aerosols and soils to find a reliable, cost-effective, and sufficiently precise method for researchers involved in environmental testing at the Yuma Proving Ground, Yuma, Arizona. Criteria used for evaluation include cost, method of analysis, specificity, sensitivity, reproducibility, applicability, and commercial availability. We found that atomic absorption spectrometry with graphite furnace meets these criteria for testing samples for beryllium. We found that this method can also be used to test samples for depleted uranium. However, atomic absorption with graphite furnace is not as sensitive a measurement method for depleted uranium as it is for beryllium, so we recommend that quality control of depleted uranium analysis be maintained by testing 10 of every 1000 samples by neutron activation analysis. We also evaluated 45 companies and institutions that provide analyses of beryllium and depleted uranium. 5 refs., 1 tab.

  19. Helium on Venus - Implications for uranium and thorium

    NASA Technical Reports Server (NTRS)

    Prather, M. J.; Mcelroy, M. B.

    1983-01-01

    Helium is removed at an average rate of 10 to the 6th atoms per square centimeter per second from Venus's atmosphere by the solar wind following ionization above the plasmapause. The surface source of helium-4 on Venus is similar to that on earth, suggesting comparable abundances of crustal uranium and thorium.

  20. Analysis of Channel Stress Induced by NiPt-Silicide in Metal-Oxide-Semiconductor Field-Effect Transistor and Its Generation Mechanism

    NASA Astrophysics Data System (ADS)

    Mizuo, Mariko; Yamaguchi, Tadashi; Kudo, Shuichi; Hirose, Yukinori; Kimura, Hiroshi; Tsuchimoto, Jun-ichi; Hattori, Nobuyoshi

    2013-09-01

    Channel stress induced by NiPt-silicide films in metal-oxide-semiconductor field-effect transistors (MOSFETs) was demonstrated using UV-Raman spectroscopy, and its generation mechanism was revealed. It was possible to accurately measure the channel stress with the Raman test structure. The channel stress depends on the source/drain doping type and the second silicide annealing method. In order to discuss the channel stress generation mechanism, NiPt-silicide microstructure analyses were performed using X-ray diffraction analysis and scanning transmission electron microscopy. The channel stress generation mechanism can be elucidated by the following two factors: the change in the NiSi lattice spacing, which depends on the annealing temperature, and the NiSi crystal orientation. The analyses of these factors are important for controlling channel stress in stress engineering for high-performance transistors.

  1. Atomic vapor laser isotope separation

    SciTech Connect

    Stern, R.C.; Paisner, J.A.

    1985-11-08

    Atomic vapor laser isotope separation (AVLIS) is a general and powerful technique. A major present application to the enrichment of uranium for light-water power reactor fuel has been under development for over 10 years. In June 1985 the Department of Energy announced the selection of AVLIS as the technology to meet the nation's future need for the internationally competitive production of uranium separative work. The economic basis for this decision is considered, with an indicated of the constraints placed on the process figures of merit and the process laser system. We then trace an atom through a generic AVLIS separator and give examples of the physical steps encountered, the models used to describe the process physics, the fundamental parameters involved, and the role of diagnostic laser measurements.

  2. Process for electrolytically preparing uranium metal

    DOEpatents

    Haas, Paul A.

    1989-01-01

    A process for making uranium metal from uranium oxide by first fluorinating uranium oxide to form uranium tetrafluoride and next electrolytically reducing the uranium tetrafluoride with a carbon anode to form uranium metal and CF.sub.4. The CF.sub.4 is reused in the fluorination reaction rather than being disposed of as a hazardous waste.

  3. Process for electrolytically preparing uranium metal

    DOEpatents

    Haas, Paul A.

    1989-08-01

    A process for making uranium metal from uranium oxide by first fluorinating uranium oxide to form uranium tetrafluoride and next electrolytically reducing the uranium tetrafluoride with a carbon anode to form uranium metal and CF.sub.4. The CF.sub.4 is reused in the fluorination reaction rather than being disposed of as a hazardous waste.

  4. Influence of uranium hydride oxidation on uranium metal behaviour

    SciTech Connect

    Patel, N.; Hambley, D.; Clarke, S.A.; Simpson, K.

    2013-07-01

    This work addresses concerns that the rapid, exothermic oxidation of active uranium hydride in air could stimulate an exothermic reaction (burning) involving any adjacent uranium metal, so as to increase the potential hazard arising from a hydride reaction. The effect of the thermal reaction of active uranium hydride, especially in contact with uranium metal, does not increase in proportion with hydride mass, particularly when considering large quantities of hydride. Whether uranium metal continues to burn in the long term is a function of the uranium metal and its surroundings. The source of the initial heat input to the uranium, if sufficient to cause ignition, is not important. Sustained burning of uranium requires the rate of heat generation to be sufficient to offset the total rate of heat loss so as to maintain an elevated temperature. For dense uranium, this is very difficult to achieve in naturally occurring circumstances. Areas of the uranium surface can lose heat but not generate heat. Heat can be lost by conduction, through contact with other materials, and by convection and radiation, e.g. from areas where the uranium surface is covered with a layer of oxidised material, such as burned-out hydride or from fuel cladding. These rates of heat loss are highly significant in relation to the rate of heat generation by sustained oxidation of uranium in air. Finite volume modelling has been used to examine the behaviour of a magnesium-clad uranium metal fuel element within a bottle surrounded by other un-bottled fuel elements. In the event that the bottle is breached, suddenly, in air, it can be concluded that the bulk uranium metal oxidation reaction will not reach a self-sustaining level and the mass of uranium oxidised will likely to be small in relation to mass of uranium hydride oxidised. (authors)

  5. Uranium deposits of Brazil

    SciTech Connect

    1991-09-01

    Brazil is a country of vast natural resources, including numerous uranium deposits. In support of the country`s nuclear power program, Brazil has developed the most active uranium industry in South America. Brazil has one operating reactor (Angra 1, a 626-MWe PWR), and two under construction. The country`s economic challenges have slowed the progress of its nuclear program. At present, the Pocos de Caldas district is the only active uranium production. In 1990, the Cercado open-pit mine produced approximately 45 metric tons (MT) U{sub 3}O{sub 8} (100 thousand pounds). Brazil`s state-owned uranium production and processing company, Uranio do Brasil, announced it has decided to begin shifting its production from the high-cost and nearly depleted deposits at Pocos de Caldas, to lower-cost reserves at Lagoa Real. Production at Lagoa Real is schedules to begin by 1993. In addition to these two districts, Brazil has many other known uranium deposits, and as a whole, it is estimated that Brazil has over 275,000 MT U{sub 3}O{sub 8} (600 million pounds U{sub 3}O{sub 8}) in reserves.

  6. Microbial reduction of uranium

    USGS Publications Warehouse

    Lovley, D.R.; Phillips, E.J.P.; Gorby, Y.A.; Landa, E.R.

    1991-01-01

    REDUCTION of the soluble, oxidized form of uranium, U(VI), to insoluble U(IV) is an important mechanism for the immobilization of uranium in aquatic sediments and for the formation of some uranium ores1-10. U(VI) reduction has generally been regarded as an abiological reaction in which sulphide, molecular hydrogen or organic compounds function as the reductant1,2,5,11. Microbial involvement in U(VI) reduction has been considered to be limited to indirect effects, such as microbial metabolism providing the reduced compounds for abiological U(VI) reduction and microbial cell walls providing a surface to stimulate abiological U(VI) reduction1,12,13. We report here, however, that dissimilatory Fe(III)-reducing microorganisms can obtain energy for growth by electron transport to U(VI). This novel form of microbial metabolism can be much faster than commonly cited abiological mechanisms for U(VI) reduction. Not only do these findings expand the known potential terminal electron acceptors for microbial energy transduction, they offer a likely explanation for the deposition of uranium in aquatic sediments and aquifers, and suggest a method for biological remediation of environments contaminated with uranium.

  7. PRODUCTION OF URANIUM HEXAFLUORIDE

    DOEpatents

    Fowler, R.D.

    1957-08-27

    A process for the production of uranium hexafluoride from the oxides of uranium is reported. In accordance with the method, the higher oxides of uranium may be reduced to uranium dioxide (UO/sub 2/), the latter converted into uranium tetrafluoride by reaction with hydrogen fluoride, and the UF/sub 4/ converted to UF/sub 6/ by reaction with a fluorinating agent, such as CoF/sub 3/. The UO/sub 3/ or U/sub 3/O/sub 8/ is placed in a reac tion chamber in a copper boat or tray enclosed in a copper oven, and heated to 500 to 650 deg C while hydrogen gas is passed through the oven. After nitrogen gas is used to sweep out the hydrogen and the water vapor formed, and while continuing to inaintain the temperature between 400 deg C and 600 deg C, anhydrous hydrogen fluoride is passed through. After completion of the conversion of UO/sub 2/ to UF/sub 4/ the temperature of the reaction chamber is lowered to about 400 deg C or less, the UF/sub 4/ is mixed with the requisite quantity of CoF/sub 3/, and after evacuating the chamber, the mixture is heated to 300 to 400 deg C, and the resulting UF/sub 6/ is led off and delivered to a condenser.

  8. Uranium hexafluoride handling. Proceedings

    SciTech Connect

    Not Available

    1991-12-31

    The United States Department of Energy, Oak Ridge Field Office, and Martin Marietta Energy Systems, Inc., are co-sponsoring this Second International Conference on Uranium Hexafluoride Handling. The conference is offered as a forum for the exchange of information and concepts regarding the technical and regulatory issues and the safety aspects which relate to the handling of uranium hexafluoride. Through the papers presented here, we attempt not only to share technological advances and lessons learned, but also to demonstrate that we are concerned about the health and safety of our workers and the public, and are good stewards of the environment in which we all work and live. These proceedings are a compilation of the work of many experts in that phase of world-wide industry which comprises the nuclear fuel cycle. Their experience spans the entire range over which uranium hexafluoride is involved in the fuel cycle, from the production of UF{sub 6} from the naturally-occurring oxide to its re-conversion to oxide for reactor fuels. The papers furnish insights into the chemical, physical, and nuclear properties of uranium hexafluoride as they influence its transport, storage, and the design and operation of plant-scale facilities for production, processing, and conversion to oxide. The papers demonstrate, in an industry often cited for its excellent safety record, continuing efforts to further improve safety in all areas of handling uranium hexafluoride. Selected papers were processed separately for inclusion in the Energy Science and Technology Database.

  9. Uranium resources: Issues and facts

    SciTech Connect

    Delene, J.G.

    1993-12-31

    Although there are several secondary issues, the most important uranium resource issue is, ``will there be enough uranium available at a cost which will allow nuclear power to be competitive in the future?`` This paper will attempt to answer this question by discussing uranium supply, demand, and economics from the perspective of the United States. The paper will discuss: how much uranium is available; the sensitivity of nuclear power costs to uranium price; the potential future demand for uranium in the Unites States, some of the options available to reduce this demand, the potential role of the Advanced Liquid Metal Cooled Reactor (ALMR) in reducing uranium demand; and potential alternative uranium sources and technologies.

  10. METHOD OF RECOVERING URANIUM COMPOUNDS

    DOEpatents

    Poirier, R.H.

    1957-10-29

    S>The recovery of uranium compounds which have been adsorbed on anion exchange resins is discussed. The uranium and thorium-containing residues from monazite processed by alkali hydroxide are separated from solution, and leached with an alkali metal carbonate solution, whereby the uranium and thorium hydrorides are dissolved. The carbonate solution is then passed over an anion exchange resin causing the uranium to be adsorbed while the thorium remains in solution. The uranium may be recovered by contacting the uranium-holding resin with an aqueous ammonium carbonate solution whereby the uranium values are eluted from the resin and then heating the eluate whereby carbon dioxide and ammonia are given off, the pH value of the solution is lowered, and the uranium is precipitated.

  11. Infrared photodetectors with tailorable response due to resonant plasmon absorption in epitaxial silicide particles embedded in silicon

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Dejewski, S. M.; George, T.; Jones, E. W.; Krabach, T. N.; Ksendzov, A.

    1993-01-01

    Tailorable infrared photoresponse in the 1-2 micron range are demonstrated in a device incorporating electrically floating metal silicide particles. Photons absorbed by excitation of the metallic-particle surface plasmon are shown to contribute to the photoresponse. Quantum efficiencies of roughly 0.2 percent are measured at 77 K, with dark currents of less than 2 nA/sq cm at a reverse bias of 1 V and detectivities of 4 x 10 exp 9 - 8 x 10 exp 9 cm sq rt Hz/W are obtained.

  12. Tris(bis(trimethylsilyl)amido)uranium: Compounds with tri-, tetra-, and penta-valent uranium

    SciTech Connect

    Stewart, J.L.

    1988-04-01

    This trivalent uranium compound, serves as a precursor to new tri-, tetra-, and penta-valent uranium species. The geometry about the U atom is pyramidal. Lewis-base coordination compounds of U(N(SiMe/sub 3/)/sub 2/)/sub 3/ with a one-to-one- ratio of Lewis base to uranium were isolated with pyridine, 4-dimethylamino-pyridine, 2,6-Me/sub 2/-C/sub 6/H/sub 3/NC, and TPO. Two-to-one coordination compounds were obtained with t-butylnitrile and t-butylisocyanide. Compounds with more sterically demanding bases could not be isolated. The expected decrease in U-N(SiMe/sub 3/)/sub 2/ bond length with increase in oxidation state is not observed. Reaction of ClU(N(SiMe/sub 3/)/sub 2/)/sub 3/and Li(NH(p-tolyl)) yields the uranium (IV) dimer, U/sub 2/(N(SiMe/sub 3/)/sub 2/)/sub 4/(..mu..-N(p-tolyl))/sub 2/. Reaction with 2,4,6-triemethylaniline produces a dimer. Analogous substitution products could not be obtained with aniline or p-toluidine. t-Bu/sub 3/CO/sup /minus//, t-Bu/sub 2/CHO/sup /minus//, and t-Bu/sub 3/SiO/sup /minus// are used to synthesize new tetravalent, mononuclear uranium compounds. Reaction of ClU(tritox)/sub 3/ with alkyllithium reagents leads to isolation of RU(tritox)/sub 3/. The reaction of U(ditox)/sub 4/ with MeLi affords the addition product U(ditox)/sub 4/(Me)Li, whose crystal structure is described. Preparation of uranium silox compounds is reported. 97 refs., 26 figs., 39 tabs.

  13. Investigation of Exotic Spin Textures in Chiral Magnetic Silicide Nanowires for Spintronics Applications

    NASA Astrophysics Data System (ADS)

    DeGrave, John P.

    Chiral magnetic materials exhibit a wide array of exotic spin configurations that are incommensurate with the underlying crystal lattice and their formation results from the competition of ferromagnetic exchange interactions and weaker Dzyaloshinskii-Moriya spin-orbit interactions. One recently revealed configuration for the B20-structure type, known as a "skyrmion," is a topologically non-trivial vortex-like magnetic domain. Skyrmion domains have become of great interest for applications in future magnetic memory storage devices since they can be manipulated as particle-like entities with remarkably low electrical currents. A major question is how the formation and current-induced dynamics of skyrmion domains are affected by the nanoscale dimensions required for such applications, and we have developed several characterization techniques to address the electrical and magnetic properties of the two silicide nanowire systems, MnSi and Fe1-xCoxSi that both have the B20-structure type. We have first observed skyrmion domains in a focus ion-beam thinned MnSi nanowire specimen using Lorentz transmission electron microscopy, and we identified that the skyrmion lattice phase is stable under small applied magnetic fields between the temperatures of 6 K and 35 K. We then developed a novel Hall effect measurement method for nanowires that we used to identify the topological Hall effect which is the electrical signature of magnetic skyrmion domains. These topological Hall effect measurements reveal that the skyrmion phase is stable in pristine MnSi nanowires between 15 K and 35 K which is a significantly larger temperature window compared to the skyrmion lattice in bulk MnSi crystals (only observed between 27 K and 29.5 K). Finally, we have measured the spin polarization of conduction electrons (which can have a significant impact on the magnitude of the topological Hall effect) in Fe1-xCoxSi nanowires using Andreev reflection spectroscopy implemented with a superconducting

  14. Development of silicide coating over molybdenum based refractory alloy and its characterization

    NASA Astrophysics Data System (ADS)

    Chakraborty, S. P.; Banerjee, S.; Sharma, I. G.; Suri, A. K.

    2010-08-01

    Molybdenum based refractory alloys are potential candidate materials for structural applications in high temperature compact nuclear reactors and fusion reactors. However, these alloys being highly susceptible to oxidation in air or oxygen at elevated temperature, undergoes severe losses from highly volatile molybdenum trioxide species. Present investigation, therefore, examines the feasibility of development of silicide type of coating over molybdenum base TZM alloy shape (Mo > 99 wt.%) using pack cementation coating technique. TZM alloy was synthesized in this laboratory from oxide intermediates of MoO 2, TiO 2 and ZrO 2 in presence of requisite amount of carbon, by alumino-thermic reduction smelting technique. The arc melted and homogenized samples of TZM alloy substrate was then embedded in the chosen and intimately mixed pack composition consisting of inert matrix (Al 2O 3), coating powder (Si) and activator (NH 4Cl) taken in the judicious proportion. The sealed charge packs contained in an alumina crucible were heated at temperatures of 1000 °C for 8-16 h heating cycle to develop the coating. The coating phase was confirmed to be of made of MoSi 2 by XRD analysis. The morphology of the coating was studied by SEM characterization. It had revealed that the coating was diffusion bonded where Si from coating diffused inward and Mo from TZM substrate diffused outward to form the coating. The coating was found to be resistant to oxidation when tested in air up to 1200 °C. A maximum 100 μm of coating thickness was achieved on each side of the substrate.

  15. Superconductivity and long range magnetic order in ternary rare earth iron silicides

    SciTech Connect

    Vining, C.B.

    1983-01-01

    Low temperature heat capacity measurements on three superconducting ternary rare-earth iron silicides, Lu/sub 2/Fe/sub 3/Si/sub 5/, Sc/sub 2/Fe/sub 3/Si/sub 5/ and Y/sub 2/Fe/sub 3/Si/sub 5/, indicate a number of unusual features in the superconducting state of these materials. These materials show a large linear term in the superconducting heat capacity and a reduced normalized jump in the specific heat at T/sub c/. These data suggest a significant fraction of the conduction electrons in these materials do not participate in the superconducting state but instead remain normal well below the superconducting transition temperature. A two band model is proposed to explain these and previously reported anomalous properties of these materials. Low temperature heat capacity measurements on the compounds RE/sub 2/Fe/sub 3/Si/sub 5/, RE = Sm, Gd-Yb, from 0.5 K to 30 K confirm previously reported antiferromagnetic ordering temperatures for RE = Gd-Tm and indicate that the compounds Sm/sub 2/Fe/sub 3/Si/sub 5/ and Yb/sub 2/Fe/sub 3/Si/sub 5/ also order antiferromagnetically. The magnetic behavoir of Yb in this system is consistent with lattice parameter determinations which indicate Yb is in the trivalent state rather than the more usual nonmagnetic divalent state. No evidence is found in the heat capacity data, even on careful inspection, for superconductivity in any of these antiferromagnetically ordered compounds.

  16. EXTRACTION OF URANIUM

    DOEpatents

    Kesler, R.D.; Rabb, D.D.

    1959-07-28

    An improved process is presented for recovering uranium from a carnotite ore. In the improved process U/sub 2/O/sub 5/ is added to the comminuted ore along with the usual amount of NaCl prior to roasting. The amount of U/sub 2/O/ sub 5/ is dependent on the amount of free calcium oxide and the uranium in the ore. Specifically, the desirable amount of U/sub 2/O/sub 5/ is 3.2% for each 1% of CaO, and 5 to 6% for each 1% of uranium. The mixture is roasted at about 1560 deg C for about 30 min and then leached with a 3 to 9% aqueous solution of sodium carbonate.

  17. Process for recovering uranium

    DOEpatents

    MacWood, G. E.; Wilder, C. D.; Altman, D.

    1959-03-24

    A process useful in recovering uranium from deposits on stainless steel liner surfaces of calutrons is presented. The deposit is removed from the stainless steel surface by washing with aqueous nitric acid. The solution obtained containing uranium, chromium, nickel, copper, and iron is treated with an excess of ammonium hydroxide to precipitnte the uranium, iron, and chromium and convert the nickel and copper to soluble ammonio complexions. The precipitated material is removed, dried and treated with carbon tetrachloride at an elevated temperature of about 500 to 600 deg C to form a vapor mixture of UCl/ sub 4/, UCl/sub 5/, FeCl/sub 3/, and CrCl/sub 4/. The UCl/sub 4/ is separated from this vapor mixture by selective fractional condensation at a temperature of about 500 to 400 deg C.

  18. PROCESS FOR RECOVERING URANIUM

    DOEpatents

    MacWood, G.E.; Wilder, C.D.; Altman, D.

    1959-03-24

    A process is described for recovering uranium from deposits on stainless steel liner surfaces of calutrons. The deposit is removed from the stainless steel surface by washing with aqueous nitric acid. The solution obtained containing uranium, chromium, nickels copper, and iron is treated with excess of ammonium hydroxide to precipitatc the uranium, irons and chromium and convert thc nickel and copper to soluble ammonia complexions. The precipitated material is removed, dried, and treated with carbon tetrachloride at an elevated temperature of about 500 to 600 deg C to form a vapor mixture of UCl/sub 4/, UCl/sub 5/, FeCl/ sub 3/, and CrCl/sub 4/. The UCl/sub 4/ is separated from this vapor mixture by selective fractional condensation at a temprrature of about 300 to400 deg C.

  19. Uranium immobilization and nuclear waste

    SciTech Connect

    Duffy, C.J.; Ogard, A.E.

    1982-02-01

    Considerable information useful in nuclear waste storage can be gained by studying the conditions of uranium ore deposit formation. Further information can be gained by comparing the chemistry of uranium to nuclear fission products and other radionuclides of concern to nuclear waste disposal. Redox state appears to be the most important variable in controlling uranium solubility, especially at near neutral pH, which is characteristic of most ground water. This is probably also true of neptunium, plutonium, and technetium. Further, redox conditions that immobilize uranium should immobilize these elements. The mechanisms that have produced uranium ore bodies in the Earth's crust are somewhat less clear. At the temperatures of hydrothermal uranium deposits, equilibrium models are probably adequate, aqueous uranium (VI) being reduced and precipitated by interaction with ferrous-iron-bearing oxides and silicates. In lower temperature roll-type uranium deposits, overall equilibrium may not have been achieved. The involvement of sulfate-reducing bacteria in ore-body formation has been postulated, but is uncertain. Reduced sulfur species do, however, appear to be involved in much of the low temperature uranium precipitation. Assessment of the possibility of uranium transport in natural ground water is complicated because the system is generally not in overall equilibrium. For this reason, Eh measurements are of limited value. If a ground water is to be capable of reducing uranium, it must contain ions capable of reducing uranium both thermodynamically and kinetically. At present, the best candidates are reduced sulfur species.

  20. PROCESS OF PREPARING URANIUM CARBIDE

    DOEpatents

    Miller, W.E.; Stethers, H.L.; Johnson, T.R.

    1964-03-24

    A process of preparing uranium monocarbide is de scribed. Uranium metal is dissolved in cadmium, zinc, cadmium-- zinc, or magnesium-- zinc alloy and a small quantity of alkali metal is added. Addition of stoichiometric amounts of carbon at 500 to 820 deg C then precipitates uranium monocarbide. (AEC)

  1. Uranium isotope separation from 1941 to the present

    NASA Astrophysics Data System (ADS)

    Maier-Komor, Peter

    2010-02-01

    Uranium isotope separation was the key development for the preparation of highly enriched isotopes in general and thus became the seed for target development and preparation for nuclear and applied physics. In 1941 (year of birth of the author) large-scale development for uranium isotope separation was started after the US authorities were warned that NAZI Germany had started its program for enrichment of uranium and might have confiscated all uranium and uranium mines in their sphere of influence. Within the framework of the Manhattan Projects the first electromagnetic mass separators (Calutrons) were installed and further developed for high throughput. The military aim of the Navy Department was to develop nuclear propulsion for submarines with practically unlimited range. Parallel to this the army worked on the development of the atomic bomb. Also in 1941 plutonium was discovered and the production of 239Pu was included into the atomic bomb program. 235U enrichment starting with natural uranium was performed in two steps with different techniques of mass separation in Oak Ridge. The first step was gas diffusion which was limited to low enrichment. The second step for high enrichment was performed with electromagnetic mass spectrometers (Calutrons). The theory for the much more effective enrichment with centrifugal separation was developed also during the Second World War, but technical problems e.g. development of high speed ball and needle bearings could not be solved before the end of the war. Spying accelerated the development of uranium separation in the Soviet Union, but also later in China, India, Pakistan, Iran and Iraq. In this paper, the physical and chemical procedures are outlined which lead to the success of the project. Some security aspects and Non-Proliferation measures are discussed.

  2. PROCESS OF RECOVERING URANIUM

    DOEpatents

    Price, T.D.; Jeung, N.M.

    1958-06-17

    An improved precipitation method is described for the recovery of uranium from aqueous solutions. After removal of all but small amounts of Ni or Cu, and after complexing any iron present, the uranium is separated as the peroxide by adding H/sub 2/O/sub 2/. The improvement lies in the fact that the addition of H/sub 2/O/sub 2/ and consequent precipitation are carried out at a temperature below the freezing; point of the solution, so that minute crystals of solvent are present as seed crystals for the precipitation.

  3. PREPARATION OF URANIUM TRIOXIDE

    DOEpatents

    Buckingham, J.S.

    1959-09-01

    The production of uranium trioxide from aqueous solutions of uranyl nitrate is discussed. The uranium trioxide is produced by adding sulfur or a sulfur-containing compound, such as thiourea, sulfamic acid, sulfuric acid, and ammonium sulfate, to the uranyl solution in an amount of about 0.5% by weight of the uranyl nitrate hexahydrate, evaporating the solution to dryness, and calcining the dry residue. The trioxide obtained by this method furnished a dioxide with a considerably higher reactivity with hydrogen fluoride than a trioxide prepared without the sulfur additive.

  4. Corrosion-resistant uranium

    DOEpatents

    Hovis, V.M. Jr.; Pullen, W.C.; Kollie, T.G.; Bell, R.T.

    1981-10-21

    The present invention is directed to the protecting of uranium and uranium alloy articles from corrosion by providing the surfaces of the articles with a layer of an ion-plated metal selected from aluminum and zinc to a thickness of at least 60 microinches and then converting at least the outer surface of the ion-plated layer of aluminum or zinc to aluminum chromate or zinc chromate. This conversion of the aluminum or zinc to the chromate form considerably enhances the corrosion resistance of the ion plating so as to effectively protect the coated article from corrosion.

  5. Corrosion-resistant uranium

    DOEpatents

    Hovis, Jr., Victor M.; Pullen, William C.; Kollie, Thomas G.; Bell, Richard T.

    1983-01-01

    The present invention is directed to the protecting of uranium and uranium alloy articles from corrosion by providing the surfaces of the articles with a layer of an ion-plated metal selected from aluminum and zinc to a thickness of at least 60 microinches and then converting at least the outer surface of the ion-plated layer of aluminum or zinc to aluminum chromate or zinc chromate. This conversion of the aluminum or zinc to the chromate form considerably enhances the corrosion resistance of the ion plating so as to effectively protect the coated article from corrosion.

  6. PRODUCTION OF URANIUM TUBING

    DOEpatents

    Creutz, E.C.

    1958-04-15

    The manufacture of thin-walled uranium tubing by the hot-piercing techique is described. Uranium billets are preheated to a temperature above 780 d C. The heated billet is fed to a station where it is engaged on its external surface by three convex-surfaced rotating rollers which are set at an angle to the axis of the billet to produce a surface friction force in one direction to force the billet over a piercing mandrel. While being formed around the mandrel and before losing the desired shape, the tube thus formed is cooled by a water spray.

  7. TREATMENT OF URANIUM SURFACES

    DOEpatents

    Slunder, C.J.

    1959-02-01

    An improved process is presented for prcparation of uranium surfaces prior to electroplating. The surfacc of the uranium to be electroplated is anodized in a bath comprising a solution of approximately 20 to 602 by weight of phosphoric acid which contains about 20 cc per liter of concentrated hydrochloric acid. Anodization is carried out for approximately 20 minutes at a current density of about 0.5 amperes per square inch at a temperature of about 35 to 45 C. The oxidic film produced by anodization is removed by dipping in strong nitric acid, followed by rinsing with water just prior to electroplating.

  8. Solubility characterization of airborne uranium from a uranium recycling plant.

    PubMed

    Metzger, Robert; Cole, Leslie

    2004-07-01

    Solubility profiles of uranium dusts in a uranium recycling plant were determined by performing in vitro solubility tests on breathing zone air samples conducted in all process areas of the processing plant. The recycling plant produces high density shields, closed end tubes that are punched and formed from uranium sheet metal, and high-fired uranium oxide, which is used as a catalyst. The recycled uranium is cut and melted in a vacuum furnace, and part of the molten uranium is poured into molds for further processing. Air samples were taken in process areas under normal working conditions. The dissolution rate of the uranium in a simulant solution of extracellular airway lining fluid (Gamble's solution) was then determined over the next 28 d. Airborne uranium in the oxide section of the plant was found to be highly insoluble with 99% of the uranium having a dissolution half time in excess of 100 d. The solubility of the airborne uranium in other areas of the facility was only slightly more soluble with over 90% of the airborne uranium having dissolution half times in excess of 90 d.

  9. The multiphoton ionization of uranium hexafluoride. Revision 1

    SciTech Connect

    Armstrong, D.P.

    1992-05-01

    Multiphoton ionization (MPI) time-of-flight mass spectroscopy and photoelectron spectroscopy studies of UF{sub 6} have been conducted using focused light from the Nd:YAG laser fundamental ({lambda}=1064 nm) and its harmonics ({lambda}=532, 355, or 266 nm), as well as other wavelengths provided by a tunable dye laser. The MPI mass spectra are dominated by the singly and multiply charged uranium ions rather than by the UF{sub x}{sup +} fragment ions even at the lowest laser power densities at which signal could be detected. The laser power dependence of U{sup n+} ions signals indicates that saturation can occur for many of the steps required for their ionization. In general, the doubly-charged uranium ion (U{sup 2+}) intensity is much greater than that of the singly-charged uranium ion (U{sup +}). For the case of the tunable dye laser experiments, the U{sup n+} (n = 1- 4) wavelength dependence is relatively unstructured and does not show observable resonance enhancement at known atomic uranium excitation wavelengths. The dominance of the U{sup 2+} ion and the absence or very small intensities of UF{sub x}{sup +} fragments, along with the unsaturated wavelength dependence, indicate that mechanisms may exist other than ionization of bare U atoms after the stepwise photodissociation of F atoms from the parent molecule.

  10. RECOVERY OF URANIUM FROM PITCHBLENDE

    DOEpatents

    Ruehle, A.E.

    1958-06-24

    The decontamination of uranium from molybdenum is described. When acid solutions containing uranyl nitrate are contacted with ether for the purpose of extracting the uranium values, complex molybdenum compounds are coextracted with the uranium and also again back-extracted from the ether with the uranium. This invention provides a process for extracting uranium in which coextraction of molybdenum is avoided. It has been found that polyhydric alcohols form complexes with molybdenum which are preferentially water-soluble are taken up by the ether extractant to only a very minor degree. The preferred embodiment of the process uses mannitol, sorbitol or a mixture of the two as the complexing agent.

  11. High loading uranium fuel plate

    DOEpatents

    Wiencek, Thomas C.; Domagala, Robert F.; Thresh, Henry R.

    1990-01-01

    Two embodiments of a high uranium fuel plate are disclosed which contain a meat comprising structured uranium compound confined between a pair of diffusion bonded ductile metal cladding plates uniformly covering the meat, the meat having a uniform high fuel loading comprising a content of uranium compound greater than about 45 Vol. % at a porosity not greater than about 10 Vol. %. In a first embodiment, the meat is a plurality of parallel wires of uranium compound. In a second embodiment, the meat is a dispersion compact containing uranium compound. The fuel plates are fabricated by a hot isostatic pressing process.

  12. Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates

    NASA Astrophysics Data System (ADS)

    Bhatta, Umananda M.; Rath, Ashutosh; Dash, Jatis K.; Ghatak, Jay; Yi-Feng, Lai; Liu, Chuan-Pu; Satyam, P. V.

    2009-11-01

    Silicon nanowires grown using the vapor-liquid-solid method are promising candidates for nanoelectronics applications. The nanowires grow from an Au-Si catalyst during silicon chemical vapor deposition. In this paper, the effect of temperature, oxide at the interface and substrate orientation on the nucleation and growth kinetics during formation of nanogold silicide structures is explained using an oxide mediated liquid-solid growth mechanism. Using real time in situ high temperature transmission electron microscopy (with 40 ms time resolution), we show the formation of high aspect ratio (≈15.0) aligned gold silicide nanorods in the presence of native oxide at the interface during in situ annealing of gold thin films on Si(110) substrates. Steps observed in the growth rate and real time electron diffraction show the existence of liquid Au-Si nano-alloy structures on the surface besides the un-reacted gold nanostructures. These results might enable us to engineer the growth of nanowires and similar structures with an Au-Si alloy as a catalyst.

  13. Silicide induced surface defects in FePt nanoparticle fcc-to-fct thermally activated phase transition

    NASA Astrophysics Data System (ADS)

    Chen, Shu; Lee, Stephen L.; André, Pascal

    2016-11-01

    Magnetic nanoparticles (MnPs) are relevant to a wide range of applications including high density information storage and magnetic resonance imaging to name but a few. Among the materials available to prepare MnPs, FePt is attracting growing attention. However, to harvest the strongest magnetic properties of FePt MnPs, a thermal annealing is often required to convert face-centered cubic as synthesized nPs into its tetragonal phase. Rarely addressed are the potential side effects of such treatments on the magnetic properties. In this study, we focus on the impact of silica shells often used in strategies aiming at overcoming MnP coalescence during the thermal annealing. While we show that this shell does prevent sintering, and that fcc-to-fct conversion does occur, we also reveal the formation of silicide, which can prevent the stronger magnetic properties of fct-FePt MnPs from being fully realised. This report therefore sheds lights on poorly investigated and understood interfacial phenomena occurring during the thermal annealing of MnPs and, by doing so, also highlights the benefits of developing new strategies to avoid silicide formation.

  14. Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates.

    PubMed

    Bhatta, Umananda M; Rath, Ashutosh; Dash, Jatis K; Ghatak, Jay; Yi-Feng, Lai; Liu, Chuan-Pu; Satyam, P V

    2009-11-18

    Silicon nanowires grown using the vapor-liquid-solid method are promising candidates for nanoelectronics applications. The nanowires grow from an Au-Si catalyst during silicon chemical vapor deposition. In this paper, the effect of temperature, oxide at the interface and substrate orientation on the nucleation and growth kinetics during formation of nanogold silicide structures is explained using an oxide mediated liquid-solid growth mechanism. Using real time in situ high temperature transmission electron microscopy (with 40 ms time resolution), we show the formation of high aspect ratio ( approximately 15.0) aligned gold silicide nanorods in the presence of native oxide at the interface during in situ annealing of gold thin films on Si(110) substrates. Steps observed in the growth rate and real time electron diffraction show the existence of liquid Au-Si nano-alloy structures on the surface besides the un-reacted gold nanostructures. These results might enable us to engineer the growth of nanowires and similar structures with an Au-Si alloy as a catalyst. PMID:19843987

  15. STRIPPING OF URANIUM FROM ORGANIC EXTRACTANTS

    DOEpatents

    Crouse, D.J. Jr.

    1962-09-01

    A liquid-liquid extraction method is given for recovering uranium values from uranium-containing solutions. Uranium is removed from a uranium-containing organic solution by contacting said organic solution with an aqueous ammonium carbonate solution substantially saturated in uranium values. A uranium- containing precipitate is thereby formed which is separated from the organic and aqueous phases. Uranium values are recovered from this separated precipitate. (AE C)

  16. Uranium, soluble salts

    Integrated Risk Information System (IRIS)

    Uranium , soluble salts ; no CASRN Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogenic Eff

  17. The neurotoxicology of uranium.

    PubMed

    Dinocourt, Céline; Legrand, Marie; Dublineau, Isabelle; Lestaevel, Philippe

    2015-11-01

    The brain is a target of environmental toxic pollutants that impair cerebral functions. Uranium is present in the environment as a result of natural deposits and release by human applications. The first part of this review describes the passage of uranium into the brain, and its effects on neurological functions and cognitive abilities. Very few human studies have looked at its cognitive effects. Experimental studies show that after exposure, uranium can reach the brain and lead to neurobehavioral impairments, including increased locomotor activity, perturbation of the sleep-wake cycle, decreased memory, and increased anxiety. The mechanisms underlying these neurobehavioral disturbances are not clearly understood. It is evident that there must be more than one toxic mechanism and that it might include different targets in the brain. In the second part, we therefore review the principal mechanisms that have been investigated in experimental models: imbalance of the anti/pro-oxidant system and neurochemical and neurophysiological pathways. Uranium effects are clearly specific according to brain area, dose, and time. Nonetheless, this review demonstrates the paucity of data about its effects on developmental processes and the need for more attention to the consequences of exposure during development.

  18. Uranium Reduction by Clostridia

    SciTech Connect

    Francis, A.J.; Dodge, Cleveland J.; Gillow, Jeffrey B.

    2006-04-05

    The FRC groundwater and sediment contain significant concentrations of U and Tc and are dominated by low pH, and high nitrate and Al concentrations where dissimilatory metal reducing bacterial activity may be limited. The presence of Clostridia in Area 3 at the FRC site has been confirmed and their ability to reduce uranium under site conditions will be determined. Although the phenomenon of uranium reduction by Clostridia has been firmly established, the molecular mechanisms underlying such a reaction are not very clear. The authors are exploring the hypothesis that U(VI) reduction occurs through hydrogenases and other enzymes (Matin and Francis). Fundamental knowledge of metal reduction using Clostridia will allow us to exploit naturally occurring processes to attenuate radionuclide and metal contaminants in situ in the subsurface. The outline for this report are as follows: (1) Growth of Clostridium sp. under normal culture conditions; (2) Fate of metals and radionuclides in the presence of Clostridia; (3) Bioreduction of uranium associated with nitrate, citrate, and lepidocrocite; and (4) Utilization of Clostridium sp. for immobilization of uranium at the FRC Area 3 site.

  19. URANIUM SOLVENT EXTRACTION PROCESS

    DOEpatents

    Harrington, C.D.

    1959-09-01

    A method is given for extracting uranium values from ores of high phosphate content consisting of dissolving them in aqueous nitric acid, adjusting the concentration of the aqueous solution to about 2 M with respect to nitric acid, and then contacting it with diethyl ether which has previously been made 1 M with respect to nitric acid.

  20. URANIUM RECOVERY PROCESS

    DOEpatents

    Hyman, H.H.; Dreher, J.L.

    1959-07-01

    The recovery of uranium from the acidic aqueous metal waste solutions resulting from the bismuth phosphate carrier precipitation of plutonium from solutions of neutron irradiated uranium is described. The waste solutions consist of phosphoric acid, sulfuric acid, and uranium as a uranyl salt, together with salts of the fission products normally associated with neutron irradiated uranium. Generally, the process of the invention involves the partial neutralization of the waste solution with sodium hydroxide, followed by conversion of the solution to a pH 11 by mixing therewith sufficient sodium carbonate. The resultant carbonate-complexed waste is contacted with a titanated silica gel and the adsorbent separated from the aqueous medium. The aqueous solution is then mixed with sufficient acetic acid to bring the pH of the aqueous medium to between 4 and 5, whereby sodium uranyl acetate is precipitated. The precipitate is dissolved in nitric acid and the resulting solution preferably provided with salting out agents. Uranyl nitrate is recovered from the solution by extraction with an ether such as diethyl ether.

  1. 78 FR 16483 - Notice of Availability of the Draft Uranium Leasing Program Programmatic Environmental Impact...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-15

    ...://ulpeis.anl.gov/ gov/. DOE will give equal weight to written, email, and oral comments. Questions.... Atomic Energy Commission (AEC), to develop a supply of domestic uranium. In 1948, the BLM issued Public... Atomic Energy Commission.'' Subsequently, other PLOs increased or decreased the total acreage of...

  2. Orientational atom interferometers sensitive to gravitational waves

    SciTech Connect

    Lorek, Dennis; Laemmerzahl, Claus; Wicht, Andreas

    2010-02-15

    We present an atom interferometer that differs from common atom interferometers as it is not based on the spatial splitting of electronic wave functions, but on orienting atoms in space. As an example we present how an orientational atom interferometer based on highly charged hydrogen-like atoms is affected by gravitational waves. We show that a monochromatic gravitational wave will cause a frequency shift that scales with the binding energy of the system rather than with its physical dimension. For a gravitational wave amplitude of h=10{sup -23} the frequency shift is of the order of 110 {mu}Hz for an atom interferometer based on a 91-fold charged uranium ion. A frequency difference of this size can be resolved by current atom interferometers in 1 s.

  3. Uranium from Seawater Program Review; Fuel Resources Uranium from Seawater Program DOE Office of Nuclear Energy

    SciTech Connect

    2013-07-01

    For nuclear energy to remain sustainable in the United States, economically viable sources of uranium beyond terrestrial ores must be developed. The goal of this program is to develop advanced adsorbents that can extract uranium from seawater at twice the capacity of the best adsorbent developed by researchers at the Japan Atomic Energy Agency (JAEA), 1.5 mg U/g adsorbent. A multidisciplinary team from Oak Ridge National Laboratory, Lawrence Berkeley National Laboratory, Pacific Northwest National Laboratory, and the University of Texas at Austin was assembled to address this challenging problem. Polymeric adsorbents, based on the radiation grafting of acrylonitrile and methacrylic acid onto high surface-area polyethylene fibers followed by conversion of the nitriles to amidoximes, have been developed. These poly(acrylamidoxime-co-methacrylic acid) fibers showed uranium adsorption capacities for the extraction of uranium from seawater that exceed 3 mg U/g adsorbent in testing at the Pacific Northwest National Laboratory Marine Sciences Laboratory. The essence of this novel technology lies in the unique high surface-area trunk material that considerably increases the grafting yield of functional groups without compromising its mechanical properties. This technology received an R&D100 Award in 2012. In addition, high surface area nanomaterial adsorbents are under development with the goal of increasing uranium adsorption capacity by taking advantage of the high surface areas and tunable porosity of carbon-based nanomaterials. Simultaneously, de novo structure-based computational design methods are being used to design more selective and stable ligands and the most promising candidates are being synthesized, tested and evaluated for incorporation onto a support matrix. Fundamental thermodynamic and kinetic studies are being carried out to improve the adsorption efficiency, the selectivity of uranium over other metals, and the stability of the adsorbents. Understanding

  4. Uranium from seawater

    SciTech Connect

    Gregg, D.; Folkendt, M.

    1982-09-21

    A novel process for recovering uranium from seawater is proposed and some of the critical technical parameters are evaluated. The process, in summary, consists of two different options for contacting adsorbant pellets with seawater without pumping the seawater. It is expected that this will reduce the mass handling requirements, compared to pumped seawater systems, by a factor of approximately 10/sup 5/, which should also result in a large reduction in initial capital investment. Activated carbon, possibly in combination with a small amount of dissolved titanium hydroxide, is expected to be the preferred adsorbant material instead of the commonly assumed titanium hydroxide alone. The activated carbon, after exposure to seawater, can be stripped of uranium with an appropriate eluant (probably an acid) or can be burned for its heating value (possible in a power plant) leaving the uranium further enriched in its ash. The uranium, representing about 1% of the ash, is then a rich ore and would be recovered in a conventional manner. Experimental results have indicated that activated carbon, acting alone, is not adequately effective in adsorbing the uranium from seawater. We measured partition coefficients (concentration ratios) of approximately 10/sup 3/ in seawater instead of the reported values of 10/sup 5/. However, preliminary tests carried out in fresh water show considerable promise for an extraction system that uses a combination of dissolved titanium hydroxide (in minute amounts) which forms an insoluble compound with the uranyl ion, and the insoluble compound then being sorbed out on activated carbon. Such a system showed partition coefficients in excess of 10/sup 5/ in fresh water. However, the system was not tested in seawater.

  5. Fluid-bed fluoride volatility process recovers uranium from spent uranium alloy fuels

    NASA Technical Reports Server (NTRS)

    Barghusen, J. J.; Chilenskas, A. A.; Gunderson, G. E.; Holmes, J. T.; Jonke, A. A.; Kincinas, J. E.; Levitz, N. M.; Potts, G. L.; Ramaswami, D.; Stethers, H.; Turner, K. S.

    1967-01-01

    Fluid-bed fluoride volatility process recovers uranium from uranium fuels containing either zirconium or aluminum. The uranium is recovered as uranium hexafluoride. The process requires few operations in simple, compact equipment, and eliminates aqueous radioactive wastes.

  6. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

    NASA Technical Reports Server (NTRS)

    Mahan, John E.

    1990-01-01

    Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x

  7. The study of material accountancy procedures for uranium in a whole nuclear fuel cycle

    SciTech Connect

    Nakano, Hiromasa; Akiba, Mitsunori

    1995-07-01

    Material accountancy procedures for uranium under a whole nuclear fuel cycle were studied by taking into consideration the material accountancy capability associated with realistic measurement uncertainties. The significant quantity used by the International Atomic Energy Agency (IAEA) for low-enriched uranium is 75 kg U-235 contained. A loss of U-235 contained in uranium can be detected by either of the following two procedures: one is a traditional U-235 isotope balance, and the other is a total uranium element balance. Facility types studied in this paper were UF6 conversion, gas centrifuge uranium enrichment, fuel fabrication, reprocessing, plutonium conversion, and MOX fuel production in Japan, where recycled uranium is processed in addition to natural uranium. It was found that the material accountancy capability of a total uranium element balance was almost always higher than that of a U-235 isotope balance under normal accuracy of weight, concentration, and enrichment measurements. Changing from the traditional U-235 isotope balance to the total uranium element balance for these facilities would lead to a gain of U-235 loss detection capability through material accountancy and to a reduction in the required resources of both the IAEA and operators.

  8. Psychosocial and health impacts of uranium mining and milling on Navajo lands.

    PubMed

    Dawson, Susan E; Madsen, Gary E

    2011-11-01

    The uranium industry in the American Southwest has had profoundly negative impacts on American Indian communities. Navajo workers experienced significant health problems, including lung cancer and nonmalignant respiratory diseases, and psychosocial problems, such as depression and anxiety. There were four uranium processing mills and approximately 1,200 uranium mines on the Navajo Nation's over 27,000 square miles. In this paper, a chronology is presented of how uranium mining and milling impacted the lives of Navajo workers and their families. Local community leaders organized meetings across the reservation to inform workers and their families about the relationship between worker exposures and possible health problems. A reservation-wide effort resulted in activists working with political leaders and attorneys to write radiation compensation legislation, which was passed in 1990 as the Radiation Exposure Compensation Act (RECA) and included underground uranium miners, atomic downwinders, and nuclear test-site workers. Later efforts resulted in the inclusion of surface miners, ore truck haulers, and millworkers in the RECA Amendments of 2000. On the Navajo Nation, the Office of Navajo Uranium Workers was created to assist workers and their families to apply for RECA funds. Present issues concerning the Navajo and other uranium-impacted groups include those who worked in mining and milling after 1971 and are excluded from RECA. Perceptions about uranium health impacts have contributed recently to the Navajo people rejecting a resumption of uranium mining and milling on Navajo lands. PMID:21979550

  9. X-ray photoelectron and Auger electron spectroscopic study of the adsorption of molecular iodine on uranium metal and uranium dioxide

    SciTech Connect

    Dillard, J.G.; Moers, H.; Klewe-Nebenius, H.; Kirch, G.; Pfennig, G.; Ache, H.J.

    1984-08-30

    The adsorption of molecular iodine on uranium metal and on uranium dioxide has been investigated at 25/sup 0/C. Clean surfaces were prepared in an ultrahigh vacuum apparatus and were characterized by X-ray photoelectron (XPS) and X-ray and electron-induced Auger electron spectroscopies (AES). Adsorption of I/sub 2/ was studied for exposures up to 100 langmuirs (1 langmuir = 10/sup -6/ torr s) on uranium metal and to 75 langmuirs on uranium dioxide. Above about 2-langmuir I/sub 2/ exposure on uranium, spectroscopic evidence is obtained to indicate the beginning of UI/sub 3/ formation. Saturation coverage for I/sub 2/ adsorption on uranium dioxide occurs at approximately 10-15 langmuirs. Analysis of the XPS and AES results as well as studies of spectra as a function of temperature lead to the conclusions that a dissociative chemisorption/reaction process occurs on uranium metal while nondissociative adsorption occurs on uranium dioxide. Variations in the iodine Auger kinetic energy and in the Auger parameter are interpreted in light of extra-atomic relaxation processes. 42 references, 10 figures, 1 table.

  10. PRODUCTION OF URANIUM METAL BY CARBON REDUCTION

    DOEpatents

    Holden, R.B.; Powers, R.M.; Blaber, O.J.

    1959-09-22

    The preparation of uranium metal by the carbon reduction of an oxide of uranium is described. In a preferred embodiment of the invention a charge composed of carbon and uranium oxide is heated to a solid mass after which it is further heated under vacuum to a temperature of about 2000 deg C to produce a fused uranium metal. Slowly ccoling the fused mass produces a dendritic structure of uranium carbide in uranium metal. Reacting the solidified charge with deionized water hydrolyzes the uranium carbide to finely divide uranium dioxide which can be separated from the coarser uranium metal by ordinary filtration methods.

  11. Probing Electronic Transport of Individual Nanostructures with Atomic Precision

    NASA Astrophysics Data System (ADS)

    Qin, Shengyong; Li, An-Ping

    Accessing individual nanostructures with atomic precision is an important process in the bottom-up fabrication and characterization of electronic nanodevices. Local electrical contacts, namely nanoelectrodes, are often fabricated by using top-down lithography and chemical etching techniques. These processes however lack atomic precision and introduce the possibility of contamination. Here, we review recent reports on the application of a field-induced emission process in the fabrication of local contacts onto individual nanowires and nanotubes with atomic spatial precision. In this method, gold nanoislands are deposited onto nanostructures precisely by using a scanning tunneling microscope tip, which provides a clean and controllable process to ensure both electrically conductive and mechanically reliable contacts. The applicability of the technique has been demonstrated in a wide variety of nanostructures, including silicide atomic wires, carbon nanotubes, and copper nanowires. These local contacts bridge the nanostructures and the transport probes, allowing for the measurements of both electrical transport and scanning tunneling microscopy on the same nanostructures in situ. The direct correlation between electronic and transport properties and atomic structures can be explored on individual nanostructures at the unprecedented atomic level.

  12. Probing electronic transport of individual nanostructures with atomic precision

    SciTech Connect

    Qin, Shengyong; Li, An-Ping

    2012-01-01

    Accessing individual nanostructures with atomic precision is an important process in the bottom-up fabrication and characterization of electronic nanodevices. Local electrical contacts, namely nanoelectrodes, are often fabricated by using top-down lithography and chemical etching techniques. These processes however lack atomic precision and introduce the possibility of contamination. Here, we review recent reports on the application of a field-induced emission process in the fabrication of local contacts onto individual nanowires and nanotubes with atomic spatial precision. In this method, gold nanoislands are deposited onto nanostructures precisely by using a scanning tunneling microscope tip, which provides a clean and controllable process to ensure both electrically conductive and mechanically reliable contacts. The applicability of the technique has been demonstrated in a wide variety of nanostructures, including silicide atomic wires, carbon nanotubes, and copper nanowires. These local contacts bridge the nanostructures and the transport probes, allowing for the measurements of both electrical transport and scanning tunneling microscopy on the same nanostructures in situ. The direct correlation between electronic and transport properties and atomic structures can be explored on individual nanostructures at the unprecedented atomic level.

  13. 31 CFR 540.309 - Natural uranium.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Natural uranium. 540.309 Section 540... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.309 Natural uranium. The term natural uranium means uranium found...

  14. 31 CFR 540.309 - Natural uranium.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Natural uranium. 540.309 Section 540... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.309 Natural uranium. The term natural uranium means uranium found...

  15. 31 CFR 540.309 - Natural uranium.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Natural uranium. 540.309 Section 540... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.309 Natural uranium. The term natural uranium means uranium found...

  16. 31 CFR 540.309 - Natural uranium.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Natural uranium. 540.309 Section 540... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.309 Natural uranium. The term natural uranium means uranium found...

  17. Method of preparation of uranium nitride

    DOEpatents

    Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James

    2013-07-09

    Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

  18. 31 CFR 540.309 - Natural uranium.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Natural uranium. 540.309 Section 540... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.309 Natural uranium. The term natural uranium means uranium found...

  19. Perimeter safeguards techniques for uranium-enrichment plants

    SciTech Connect

    Fehlau, P.E.; Chamber, W.H.

    1981-09-01

    In 1972, a working group of the International Atomic Energy Agency identified a goal to develop and evaluate perimeter safeguards for uranium isotope enrichment plants. As part of the United State's response to that goal, Los Alamos Detection and Verification personnel studied gamma-ray and neutron emissions from uranium hexafluoride. They developed instruments that use the emissions to verify uranium enrichment and to monitor perimeter personnel and shipping portals. Unattended perimeter monitors and hand-held verification instruments were evaluated in field measurements and, when possible, were loaned to enrichment facilities for trials. None of the seven package monitoring techniques that were investigated proved entirely satisfactory for an unattended monitor. They either revealed proprietary information about centrifuge design or were subject to interference by shielding materials that could be present in a package. Further evaluation in a centrifuge facility may help in developing an acceptable attended package monitor. 34 figures, 9 tables.

  20. Atomistic Properties of Y Uranium

    SciTech Connect

    Benjamin Beeler; Chaitanya Deo; Mmichael Baskes; Maria Okuniewski

    2012-02-01

    The properties of the body-centered cubic y phase of uranium (U) are calculated using atomistic simulations. First, a modified embedded-atom method interatomic potential is developed for the high temperature body-centered cubic (y) phase of U. This phase is stable only at high temperatures and is thus relatively inaccessible to first principles calculations and room temperature experiments. Using this potential, equilibrium volume and elastic constants are calculated at 0 K and found to be in close agreement with previous first principles calculations. Further, the melting point, heat capacity, enthalpy of fusion, thermal expansion and volume change upon melting are calculated and found to be in reasonable agreement with experiment. The low temperature mechanical instability of y U is correctly predicted and investigated as a function of pressure. The mechanical instability is suppressed at pressures greater than 17.2 GPa. The vacancy formation energy is analyzed as a function of pressure and shows a linear trend, allowing for the calculation of the extrapolated zero pressure vacancy formation energy. Finally, the self-defect formation energy is analyzed as a function of temperature. This is the first atomistic y calculation of U properties above 0 K with interatomic potentials.

  1. Critical analysis of world uranium resources

    USGS Publications Warehouse

    Hall, Susan; Coleman, Margaret

    2013-01-01

    report’s analysis of 141 mines that are operating or are being actively developed identifies 2.7 million tU of in-situ uranium resources worldwide, approximately 2.1 million tU recoverable after mining and milling losses were deducted. Sixty-four operating mines report a total of 1.4 million tU of in-situ RAR (about 1 million tU recoverable). Seventy-seven developing mines/production centers report 1.3 million tU in-situ Reasonably Assured Resources (RAR) (about 1.1 million tU recoverable), which have a reasonable chance of producing uranium within 5 years. Most of the production is projected to come from conventional underground or open pit mines as opposed to in-situ leach mines. Production capacity in operating mines is about 76,000 tU/yr, and in developing mines is estimated at greater than 52,000 tU/yr. Production capacity in operating mines should be considered a maximum as mines seldom produce up to licensed capacity due to operational difficulties. In 2010, worldwide mines operated at 70 percent of licensed capacity, and production has never exceeded 89 percent of capacity. The capacity in developing mines is not always reported. In this study 35 percent of developing mines did not report a target licensed capacity, so estimates of future capacity may be too low. The Organisation for Economic Co-operation and Development’s Nuclear Energy Agency (NEA) and International Atomic Energy Agency (IAEA) estimate an additional 1.4 million tU economically recoverable resources, beyond that identified in operating or developing mines identified in this report. As well, 0.5 million tU in subeconomic resources, and 2.3 million tU in the geologically less certain inferred category are identified worldwide. These agencies estimate 2.2 million tU in secondary sources such as government and commercial stockpiles and re-enriched uranium tails. They also estimate that unconventional uranium supplies (uraniferous phosphate and black shale deposits) may contain up to 7.6 million t

  2. Method of preparing uranium nitride or uranium carbonitride bodies

    DOEpatents

    Wilhelm, Harley A.; McClusky, James K.

    1976-04-27

    Sintered uranium nitride or uranium carbonitride bodies having a controlled final carbon-to-uranium ratio are prepared, in an essentially continuous process, from U.sub.3 O.sub.8 and carbon by varying the weight ratio of carbon to U.sub.3 O.sub.8 in the feed mixture, which is compressed into a green body and sintered in a continuous heating process under various controlled atmospheric conditions to prepare the sintered bodies.

  3. Quaternary aluminum silicides grown in Al flux: RE5Mn4Al(23-x)Si(x) (RE = Ho, Er, Yb) and Er44Mn55(AlSi)237.

    PubMed

    Calta, Nicholas P; Kanatzidis, Mercouri G

    2013-09-01

    Four novel intermetallic silicides, RE5Mn4Al(23-x)Si(x) (x = 7.9(9), RE = Ho, Er, Yb) and Er44Mn55(AlSi)237, have been prepared by reaction in aluminum flux. Three RE5Mn4Al(23-x)Si(x) compounds crystallize in the tetragonal space group P4/mmm with the relatively rare Gd5Mg5Fe4Al(18-x)Si(x) structure type. Refinement of single-crystal X-ray diffraction data yielded unit cell parameters of a = 11.3834(9)-11.4171(10) Å and c = 4.0297(2)-4.0575(4) Å with volumes ranging from 522.41(5) to 528.90(8) Å(3). Structure refinements on single-crystal diffraction data show that Er44Mn55(AlSi)237 adopts a new cubic structure type in the space group Pm3n with a very large unit cell edge of a = 21.815(3) Å. This new structure is best understood when viewed as two sets of nested polyhedra centered on a main group atom and a manganese atom. These polyhedral clusters describe the majority of the atomic positions in the structure and form a perovskite-type network. We also report the electrical and magnetic properties of the title compounds. All compounds except the Ho analogue behave as normal paramagnetic metals without any observed magnetic transitions above 5 K and exhibit antiferromagnetic correlations deduced from the value of their Curie constants. Ho5Mn4Al(23-x)Si(x) exhibits a ferromagnetic transition at 20 K and an additional metamagnetic transition at 10 K, suggesting independent ordering temperatures for two distinct magnetic sublattices. PMID:23931551

  4. Femtosecond Laser Ablation Multicollector ICPMS Analysis of Uranium Isotopes in NIST Glass

    SciTech Connect

    Duffin, Andrew M.; Springer, Kellen WE; Ward, Jesse D.; Jarman, Kenneth D.; Robinson, John W.; Endres, Mackenzie C.; Hart, Garret L.; Gonzalez, Jhanis J.; Oropeza, Dayana; Russo, Richard; Willingham, David G.; Naes, Benjamin E.; Fahey, Albert J.; Eiden, Gregory C.

    2015-02-06

    We have utilized femtosecond laser ablation coupled to multi-collector inductively couple plasma mass spectrometry to measure the uranium isotopic content of NIST 61x (x=0,2,4,6) glasses. The uranium content of these glasses is a linear two-component mixing between isotopically natural uranium and the isotopically depleted spike used in preparing the glasses. Laser ablation results match extremely well, generally within a few ppm, with solution analysis following sample dissolution and chemical separation. In addition to isotopic data, sample utilization efficiency measurements indicate that over 1% of ablated uranium atoms reach a mass spectrometer detector, making this technique extremely efficient. Laser sampling also allows for spatial analysis and our data indicate that rare uranium concentration inhomogeneities exist in NIST 616 glass.

  5. RECOVERY OF URANIUM FROM ZIRCONIUM-URANIUM NUCLEAR FUELS

    DOEpatents

    Gens, T.A.

    1962-07-10

    An improvement was made in a process of recovering uranium from a uranium-zirconium composition which was hydrochlorinated with gsseous hydrogen chloride at a temperature of from 350 to 800 deg C resulting in volatilization of the zirconium, as zirconium tetrachloride, and the formation of a uranium containing nitric acid insoluble residue. The improvement consists of reacting the nitric acid insoluble hydrochlorination residue with gaseous carbon tetrachloride at a temperature in the range 550 to 600 deg C, and thereafter recovering the resulting uranium chloride vapors. (AEC)

  6. Method for fabricating uranium foils and uranium alloy foils

    DOEpatents

    Hofman, Gerard L.; Meyer, Mitchell K.; Knighton, Gaven C.; Clark, Curtis R.

    2006-09-05

    A method of producing thin foils of uranium or an alloy. The uranium or alloy is cast as a plate or sheet having a thickness less than about 5 mm and thereafter cold rolled in one or more passes at substantially ambient temperatures until the uranium or alloy thereof is in the shape of a foil having a thickness less than about 1.0 mm. The uranium alloy includes one or more of Zr, Nb, Mo, Cr, Fe, Si, Ni, Cu or Al.

  7. METHOD OF PRODUCING URANIUM

    DOEpatents

    Foster, L.S.; Magel, T.T.

    1958-05-13

    A modified process is described for the production of uranium metal by means of a bomb reduction of UF/sub 4/. Difficulty is sometimes experienced in obtaining complete separation of the uranium from the slag when the process is carried out on a snnall scale, i.e., for the production of 10 grams of U or less. Complete separation may be obtained by incorporating in the reaction mixture a quantity of MnCl/sub 2/, so that this compound is reduced along with the UF/sub 4/ . As a result a U--Mn alloy is formed which has a melting point lower than that of pure U, and consequently the metal remains molten for a longer period allowing more complete separation from the slag.

  8. FORMATION OF URANIUM PRECIPITATES

    DOEpatents

    Googin, J.M. Jr.

    1959-03-17

    A method is described for precipitation of uranium peroxide from uranium- containing solutions so as to obtain larger aggregates which facilitates washings decantations filtrations centrifugations and the like. The desired larger aggregate form is obtained by maintaining the pH of the solution in the approximate range of 1 to 3 and the temperature at about 25 deg C or below while carrytng out the precipitation. Then prior to removal of the precipitate a surface active sulfonated bicarboxyacids such as di-octyl sodium sulfo-succinates is incorporated in an anount of the order of 0.01 to 0.05 percent by weights and the slurry is allowed to ripen for about one-half hour at a temperatare below 10 deg C.

  9. Recovery of uranium from seawater

    SciTech Connect

    Sugasaka, K.; Katoh, S.; Takai, N.; Takahashi, H.; Umezawa, Y.

    1981-01-01

    Seawater contains various elements in solution. Deuterium, lithium, and uranium are the important ingredients for energy application at present and in the future. This paper deals with the recovery of uranium from seawater, with emphasis on the development of an adsorbent with high selectivity and rate of adsorption for uranium. Polyacrylamidoxime chelating resins were synthesized from various co-polymers of acrylonitrile and cross-linking agents. The resulting resins with the chelating amidoxime group showed selective adsorption for uranium in seawater. The amount of uranium adsorbed from seawater at room temperature reached 3.2 mg/g resin after 180 days. Polyacrylamidoxime fiber, which was prepared from polyacrylonitrile fiber and hydroxylamine, showed a high rate of adsorption for uranium. The polyacrylamidoxime fiber conditioned with 1 M HC1 and 1 M NaOH adsorbed 4 mg U/g fiber from seawater in ten days. 9 figures, 6 tables.

  10. PROCESS FOR PRODUCING URANIUM TETRAFLUORIDE

    DOEpatents

    Harvey, B.G.

    1954-09-14

    >This patent relates to improvements in the method for producing uranium tetrafluoride by treating an aqueous solutlon of a uranyl salt at an elevated temperature with a reducing agent effective in acld solutlon in the presence of hydrofluoric acid. Uranium tetrafluoride produced this way frequentiy contains impurities in the raw material serving as the source of uranium. Uranium tetrafluoride much less contaminated with impurities than when prepared by the above method can be prepared from materials containing such impurities by first adding a small proportion of reducing agent so as to cause a small fraction, for example 1 to 5% of the uranium tetrafluoride to be precipitated, rejecting such precipitate, and then precipitating and recovering the remainder of the uranium tetrafluoride.

  11. ELECTROLYSIS OF THORIUM AND URANIUM

    DOEpatents

    Hansen, W.N.

    1960-09-01

    An electrolytic method is given for obtaining pure thorium, uranium, and thorium-uranium alloys. The electrolytic cell comprises a cathode composed of a metal selected from the class consisting of zinc, cadmium, tin, lead, antimony, and bismuth, an anode composed of at least one of the metals selected from the group consisting of thorium and uranium in an impure state, and an electrolyte composed of a fused salt containing at least one of the salts of the metals selected from the class consisting of thorium, uranium. zinc, cadmium, tin, lead, antimony, and bismuth. Electrolysis of the fused salt while the cathode is maintained in the molten condition deposits thorium, uranium, or thorium-uranium alloys in pure form in the molten cathode which thereafter may be separated from the molten cathode product by distillation.

  12. The international uranium market

    SciTech Connect

    Neff, T.

    1984-01-01

    Shortages, glut, political manipulation and worries about security have all marked the international trade in uranium. In this book, the director of the International Energy Studies Program of the MIT Energy Laboratory sorts out these factors, looks closely at the position of a number of countries, and speculates on the future of a market in which supply will exceed demand, costs will vary widely, and governments will continue to be directly involved for as far ahead as anyone can see.

  13. WELDED JACKETED URANIUM BODY

    DOEpatents

    Gurinsky, D.H.

    1958-08-26

    A fuel element is presented for a neutronic reactor and is comprised of a uranium body, a non-fissionable jacket surrounding sald body, thu jacket including a portion sealed by a weld, and an inclusion in said sealed jacket at said weld of a fiux having a low neutron capture cross-section. The flux is provided by combining chlorine gas and hydrogen in the intense heat of-the arc, in a "Heliarc" welding muthod, to form dry hydrochloric acid gas.

  14. Atomic polarizabilities

    SciTech Connect

    Safronova, M. S.; Mitroy, J.; Clark, Charles W.; Kozlov, M. G.

    2015-01-22

    The atomic dipole polarizability governs the first-order response of an atom to an applied electric field. Atomic polarization phenomena impinge upon a number of areas and processes in physics and have been the subject of considerable interest and heightened importance in recent years. In this paper, we will summarize some of the recent applications of atomic polarizability studies. A summary of results for polarizabilities of noble gases, monovalent, and divalent atoms is given. The development of the CI+all-order method that combines configuration interaction and linearized coupled-cluster approaches is discussed.

  15. Depleted Uranium in Repositories

    SciTech Connect

    Haire, M.J.; Croff, A.G.

    1997-12-31

    For uranium to be useful in most fission nuclear reactors, it must be enriched (i.e. the concentration of the fissile isotope 235U must be increased). Therefore, depleted uranium (DU)-uranium which has less than naturally occurring concentrations of 235U-is a co-product of the enrichment process. Four to six tons of DU exist for every ton of fresh light water reactor fuel. There were 407,006 MgU 407,000 metric tons (t) of DU stored on U.S. Department of Energy (DOE) sites as of July 1993. If this DU were to be declared surplus, converted to a stable oxide form, and emplaced in a near surface disposal facility, the costs are estimated to be several billion dollars. However, the U.S. Nuclear Regulatory Commission has stated that near surface disposal of large quantities of DU tails is not appropriate. Thus, there is the possibility that disposition via disposal will be in a deep geological repository. One alternative that may significantly reduce the cost of DU disposition is to use it beneficially. In fact, DOE has begun the Beneficial Uses of DU Project to identify large scale uses of DU and to encourage its reuse. Several beneficial uses, many of which involve applications in the repository per se or in managing the wastes to go into the repository, are discussed in this report.

  16. PROCESS FOR PREPARING URANIUM METAL

    DOEpatents

    Prescott, C.H. Jr.; Reynolds, F.L.

    1959-01-13

    A process is presented for producing oxygen-free uranium metal comprising contacting iodine vapor with crude uranium in a reaction zone maintained at 400 to 800 C to produce a vaporous mixture of UI/sub 4/ and iodine. Also disposed within the maction zone is a tungsten filament which is heated to about 1600 C. The UI/sub 4/, upon contacting the hot filament, is decomposed to molten uranium substantially free of oxygen.

  17. METHOD OF JACKETING URANIUM BODIES

    DOEpatents

    Maloney, J.O.; Haines, E.B.; Tepe, J.B.

    1958-08-26

    An improved process is presented for providing uranium slugs with thin walled aluminum jackets. Since aluminum has a slightiy higher coefficient of thermal expansion than does uraaium, both uranium slugs and aluminum cans are heated to an elevated temperature of about 180 C, and the slug are inserted in the cans at that temperature. During the subsequent cooling of the assembly, the aluminum contracts more than does the uranium and a tight shrink fit is thus assured.

  18. METHOD OF DISSOLVING URANIUM METAL

    DOEpatents

    Slotin, L.A.

    1958-02-18

    This patent relates to an economicai means of dissolving metallic uranium. It has been found that the addition of a small amount of perchloric acid to the concentrated nitric acid in which the uranium is being dissolved greatly shortens the time necessary for dissolution of the metal. Thus the use of about 1 or 2 percent of perchioric acid based on the weight of the nitric acid used, reduces the time of dissolution of uranium by a factor of about 100.

  19. PROCESS FOR REMOVING NOBLE METALS FROM URANIUM

    DOEpatents

    Knighton, J.B.

    1961-01-31

    A pyrometallurgical method is given for purifying uranium containing ruthenium and palladium. The uranium is disintegrated and oxidized by exposure to air and then the ruthenium and palladium are extracted from the uranium with molten zinc.

  20. Profile of World Uranium Enrichment Programs - 2007

    SciTech Connect

    Laughter, Mark D

    2007-11-01

    of the future, but has yet to be demonstrated commercially. In the early 1980s, six countries developing gas centrifuge technology (United States, United Kingdom, Germany, the Netherlands, Japan, and Australia) along with the International Atomic Energy Agency (IAEA) and the European Atomic Energy Community (EURATOM) began developing effective safeguards techniques for GCEPs. This effort was known as the Hexapartite Safeguards Project (HSP). The HSP had the goal of maximizing safeguards effectiveness while minimizing the cost to the operator and inspectorate, and adopted several recommendations, such as the acceptance of limited-frequency unannounced access (LFUA) inspections in cascade halls, and the use of nondestructive assay (NDA) measurements and tamper-indicating seals. While only the HSP participants initially committed to implementing all the measures of the approach, it has been used as a model for the safeguards applied to GCEPs in additional states. This report provides a snapshot overview of world enrichment capacity in 2007, including profiles of the uranium enrichment programs of individual states. It is based on open-source information, which is dependent on unclassified sources and may therefore not reflect the most recent developments. In addition, it briefly describes some of the safeguards techniques being used at various enrichment plants, including implementation of HSP recommendations.

  1. THERMAL DECOMPOSITION OF URANIUM COMPOUNDS

    DOEpatents

    Magel, T.T.; Brewer, L.

    1959-02-10

    A method is presented of preparing uranium metal of high purity consisting contacting impure U metal with halogen vapor at between 450 and 550 C to form uranium halide vapor, contacting the uranium halide vapor in the presence of H/sub 2/ with a refractory surface at about 1400 C to thermally decompose the uranium halides and deposit molten U on the refractory surface and collecting the molten U dripping from the surface. The entire operation is carried on at a sub-atmospheric pressure of below 1 mm mercury.

  2. ELECTROLYTIC PRODUCTION OF URANIUM TETRAFLUORIDE

    DOEpatents

    Lofthouse, E.

    1954-08-31

    This patent relates to electrolytic methods for the production of uranium tetrafluoride. According to the present invention a process for the production of uranium tetrafluoride comprises submitting to electrolysis an aqueous solution of uranyl fluoride containing free hydrofluoric acid. Advantageously the aqueous solution of uranyl fluoride is obtained by dissolving uranium hexafluoride in water. On electrolysis, the uranyl ions are reduced to uranous tons at the cathode and immediately combine with the fluoride ions in solution to form the insoluble uranium tetrafluoride which is precipitated.

  3. SEPARATION OF THORIUM FROM URANIUM

    DOEpatents

    Bane, R.W.

    1959-09-01

    A description is given for the separation of thorium from uranium by forming an aqueous acidic solution containing ionic species of thorium, uranyl uranium, and hydroxylamine, flowing the solution through a column containing the phenol-formaldehyde type cation exchange resin to selectively adsorb substantially all the thorium values and a portion of the uranium values, flowing a dilute solution of hydrochloric acid through the column to desorb the uranium values, and then flowing a dilute aqueous acidic solution containing an ion, such as bisulfate, which has a complexing effect upon thortum through the column to desorb substantially all of the thorium.

  4. Uranium droplet core nuclear rocket

    NASA Technical Reports Server (NTRS)

    Anghaie, Samim

    1991-01-01

    Uranium droplet nuclear rocket is conceptually designed to utilize the broad temperature range ofthe liquid phase of metallic uranium in droplet configuration which maximizes the energy transfer area per unit fuel volume. In a baseline system dissociated hydrogen at 100 bar is heated to 6000 K, providing 2000 second of Isp. Fission fragments and intense radian field enhance the dissociation of molecular hydrogen beyond the equilibrium thermodynamic level. Uranium droplets in the core are confined and separated by an axisymmetric vortex flow generated by high velocity tangential injection of hydrogen in the mid-core regions. Droplet uranium flow to the core is controlled and adjusted by a twin flow nozzle injection system.

  5. The alpha-recoil effects of uranium in the Oklo reactor

    NASA Astrophysics Data System (ADS)

    Sheng, Z. Z.; Kuroda, P. K.

    1984-12-01

    A series of acid-leaching experiments have been carried out on a sample of uranium ore from reactor zone number 10 of the Oklo mines in Gabon. Anomalously high U-234/U-238 ratios were observed accompanied by modestly increased U-235/U-238 ratios in uranium fractions. These results, which can be interpreted as being due to the alpha-recoil effects of U-238 and Pu-239, provide a convenient way of calculating the conversion factor (the fraction of uranium atoms converted to plutonium) of the natural reactors from radiochemical data, obviating the necessity for mass-spectrometric measurements.

  6. Physical, Mechanical, and Structural Properties of Highly Efficient Nanostructured n- and p-Silicides for Practical Thermoelectric Applications

    NASA Astrophysics Data System (ADS)

    Gelbstein, Yaniv; Tunbridge, Jonathan; Dixon, Richard; Reece, Mike J.; Ning, Huanpo; Gilchrist, Robert; Summers, Richard; Agote, Iñigo; Lagos, Miguel A.; Simpson, Kevin; Rouaud, Cedric; Feulner, Peter; Rivera, Sergio; Torrecillas, Ramon; Husband, Mark; Crossley, Julian; Robinson, Ivan

    2014-06-01

    Cost-effective highly efficient nanostructured n-type Mg2Si1- x Sn x and p-type higher manganese silicide (HMS) compositions were prepared for the development of practical waste heat generators for automotive and marine thermoelectric applications, in the frame of the European Commission (EC)-funded PowerDriver project. The physical, mechanical, and structural properties were fully characterized as part of a database-generation exercise required for the thermoelectric converter design. A combination of high maximal ZT values of ˜0.6 and ˜1.1 for the HMS and Mg2Si1- x Sn x compositions, respectively, and adequate mechanical properties was obtained.

  7. Oxidation at through-hole defects in fused slurry silicide coated columbium alloys FS-85 and Cb-752

    NASA Technical Reports Server (NTRS)

    Levine, S. R.

    1973-01-01

    Metal recession and interstitial contamination at 0.08-centimeter-diameter through-hole intentional defects in fused slurry silicide coated FS-85 and Cb-752 columbium alloys were studied to determine the tolerance of these materials to coating defects. Five external pressure reentry simulation exposures to 1320 C and 4.7 x 1,000 N/sq m (maximum pressure) resulted in a consumed metal zone having about twice the initial defect diameter for both alloys with an interstitial contamination zone extending about three to four initial defect diameters. Self-healing occurred in the 1.33 x 10 N/sq m, 1320 C exposures and to a lesser extent in internal pressure reentry cycles to 1320 C and 1.33 x 100 N/sq m (maximum pressure).

  8. METHOD FOR RECOVERING URANIUM FROM OILS

    DOEpatents

    Gooch, L.H.

    1959-07-14

    A method is presented for recovering uranium from hydrocarbon oils, wherein the uranium is principally present as UF/sub 4/. According to the invention, substantially complete removal of the uranium from the hydrocarbon oil may be effected by intimately mixing one part of acetone to about 2 to 12 parts of the hydrocarbon oil containing uranium and separating the resulting cake of uranium from the resulting mixture. The uranium in the cake may be readily recovered by burning to the oxide.

  9. PROCESS OF PRODUCING REFRACTORY URANIUM OXIDE ARTICLES

    DOEpatents

    Hamilton, N.E.

    1957-12-01

    A method is presented for fabricating uranium oxide into a shaped refractory article by introducing a uranium halide fluxing reagent into the uranium oxide, and then mixing and compressing the materials into a shaped composite mass. The shaped mass of uranium oxide and uranium halide is then fired at an elevated temperature so as to form a refractory sintered article. It was found in the present invention that the introduction of a uraninm halide fluxing agent afforded a fluxing action with the uranium oxide particles and that excellent cohesion between these oxide particles was obtained. Approximately 90% of uranium dioxide and 10% of uranium tetrafluoride represent a preferred composition.

  10. FLAME DENITRATION AND REDUCTION OF URANIUM NITRATE TO URANIUM DIOXIDE

    DOEpatents

    Hedley, W.H.; Roehrs, R.J.; Henderson, C.M.

    1962-06-26

    A process is given for converting uranyl nitrate solution to uranium dioxide. The process comprises spraying fine droplets of aqueous uranyl nitrate solution into a hightemperature hydrocarbon flame, said flame being deficient in oxygen approximately 30%, retaining the feed in the flame for a sufficient length of time to reduce the nitrate to the dioxide, and recovering uranium dioxide. (AEC)

  11. Kinetics of Uranium Extraction from Uranium Tailings by Oxidative Leaching

    NASA Astrophysics Data System (ADS)

    Zhang, Biao; Li, Mi; Zhang, Xiaowen; Huang, Jing

    2016-07-01

    Extraction of uranium from uranium tailings by oxidative leaching with hydrogen peroxide (H2O2) was studied. The effects of various extraction factors were investigated to optimize the dissolution conditions, as well as to determine the leaching kinetic parameters. The behavior of H2O2 in the leaching process was determined through scanning electron microscopy-energy dispersive x-ray spectroscopy (SEM-EDX) and x-ray diffraction analysis of leaching residues. Results suggest that H2O2 can significantly improve uranium extraction by decomposing the complex gangue structures in uranium tailings and by enhancing the reaction rate between uranium phases and the leaching agent. The extraction kinetics expression was changed from 1 - 3(1 - α)2/3 + 2(1 - α) = K 0(H2SO4)-0.14903(S/L)-1.80435( R o)0.20023 e -1670.93/T t ( t ≥ 5) to 1 - 3(1 - α)2/3 + 2(1 - α) = K 0(H2SO4)0.01382(S/L)-1.83275( R o)0.25763 e -1654.59/T t ( t ≥ 5) by the addition of H2O2 in the leaching process. The use of H2O2 in uranium leaching may help in extracting uranium more efficiently and rapidly from low-uranium-containing ores or tailings.

  12. Conversion of depleted uranium hexafluoride to a solid uranium compound

    DOEpatents

    Rothman, Alan B.; Graczyk, Donald G.; Essling, Alice M.; Horwitz, E. Philip

    2001-01-01

    A process for converting UF.sub.6 to a solid uranium compound such as UO.sub.2 and CaF. The UF.sub.6 vapor form is contacted with an aqueous solution of NH.sub.4 OH at a pH greater than 7 to precipitate at least some solid uranium values as a solid leaving an aqueous solution containing NH.sub.4 OH and NH.sub.4 F and remaining uranium values. The solid uranium values are separated from the aqueous solution of NH.sub.4 OH and NH.sub.4 F and remaining uranium values which is then diluted with additional water precipitating more uranium values as a solid leaving trace quantities of uranium in a dilute aqueous solution. The dilute aqueous solution is contacted with an ion-exchange resin to remove substantially all the uranium values from the dilute aqueous solution. The dilute solution being contacted with Ca(OH).sub.2 to precipitate CaF.sub.2 leaving dilute NH.sub.4 OH.

  13. 12. VIEW OF DEPLETED URANIUM INGOT AND MOLDS. DEPLETED URANIUM ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    12. VIEW OF DEPLETED URANIUM INGOT AND MOLDS. DEPLETED URANIUM CASTING OPERATIONS CEASED IN 1988. (11/14/57) - Rocky Flats Plant, Non-Nuclear Production Facility, South of Cottonwood Avenue, west of Seventh Avenue & east of Building 460, Golden, Jefferson County, CO

  14. Solubility measurement of uranium in uranium-contaminated soils

    SciTech Connect

    Lee, S.Y.; Elless, M.; Hoffman, F.

    1993-08-01

    A short-term equilibration study involving two uranium-contaminated soils at the Fernald site was conducted as part of the In Situ Remediation Integrated Program. The goal of this study is to predict the behavior of uranium during on-site remediation of these soils. Geochemical modeling was performed on the aqueous species dissolved from these soils following the equilibration study to predict the on-site uranium leaching and transport processes. The soluble levels of total uranium, calcium, magnesium, and carbonate increased continually for the first four weeks. After the first four weeks, these components either reached a steady-state equilibrium or continued linearity throughout the study. Aluminum, potassium, and iron, reached a steady-state concentration within three days. Silica levels approximated the predicted solubility of quartz throughout the study. A much higher level of dissolved uranium was observed in the soil contaminated from spillage of uranium-laden solvents and process effluents than in the soil contaminated from settling of airborne uranium particles ejected from the nearby incinerator. The high levels observed for soluble calcium, magnesium, and bicarbonate are probably the result of magnesium and/or calcium carbonate minerals dissolving in these soils. Geochemical modeling confirms that the uranyl-carbonate complexes are the most stable and dominant in these solutions. The use of carbonate minerals on these soils for erosion control and road construction activities contributes to the leaching of uranium from contaminated soil particles. Dissolved carbonates promote uranium solubility, forming highly mobile anionic species. Mobile uranium species are contaminating the groundwater underlying these soils. The development of a site-specific remediation technology is urgently needed for the FEMP site.

  15. ELECTRODEPOSITION OF NICKEL ON URANIUM

    DOEpatents

    Gray, A.G.

    1958-08-26

    A method is described for preparing uranium objects prior to nickel electroplating. The process consiats in treating the surface of the uranium with molten ferric chloride hexahydrate, at a slightiy elevated temperature. This treatment etches the metal surface providing a structure suitable for the application of adherent electrodeposits and at the same time plates the surface with a thin protective film of iron.

  16. METHOD OF DISSOLVING METALLIC URANIUM

    DOEpatents

    Schulz, W.W.

    1959-07-28

    A process is presented for more rapidly dissolving metallic uranium which comprises contacting the uranium with a mixture of nitric and phosphoric acids. The preferred concentration is a mixture which is about 10 M in nitric acid and between 0.1 to 0.15 M in phosphoric acid.

  17. Aluminosilicate Precipitation Impact on Uranium

    SciTech Connect

    WILMARTH, WILLIAM

    2006-03-10

    Experiments have been conducted to examine the fate of uranium during the formation of sodium aluminosilicate (NAS) when wastes containing high aluminate concentrations are mixed with wastes of high silicate concentration. Testing was conducted at varying degrees of uranium saturation. Testing examined typical tank conditions, e.g., stagnant, slightly elevated temperature (50 C). The results showed that under sub-saturated conditions uranium is not removed from solution to any large extent in both simulant testing and actual tank waste testing. This aspect was not thoroughly understood prior to this work and was necessary to avoid criticality issues when actual tank wastes were aggregated. There are data supporting a small removal due to sorption of uranium on sites in the NAS. Above the solubility limit the data are clear that a reduction in uranium concentration occurs concomitant with the formation of aluminosilicate. This uranium precipitation is fairly rapid and ceases when uranium reaches its solubility limit. At the solubility limit, it appears that uranium is not affected, but further testing might be warranted.

  18. METHOD OF SEPARATING URANIUM SUSPENSIONS

    DOEpatents

    Wigner, E.P.; McAdams, W.A.

    1958-08-26

    A process is presented for separating colloidally dissed uranium oxides from the heavy water medium in upwhich they are contained. The method consists in treating such dispersions with hydrogen peroxide, thereby converting the uranium to non-colloidal UO/sub 4/, and separating the UO/sub 4/ sfter its rapid settling.

  19. PLUTONIUM-URANIUM-TITANIUM ALLOYS

    DOEpatents

    Coffinberry, A.S.

    1959-07-28

    A plutonium-uranium alloy suitable for use as the fuel element in a fast breeder reactor is described. The alloy contains from 15 to 60 at.% titanium with the remainder uranium and plutonium in a specific ratio, thereby limiting the undesirable zeta phase and rendering the alloy relatively resistant to corrosion and giving it the essential characteristic of good mechanical workability.

  20. METHOD OF ELECTROPLATING ON URANIUM

    DOEpatents

    Rebol, E.W.; Wehrmann, R.F.

    1959-04-28

    This patent relates to a preparation of metallic uranium surfaces for receiving coatings, particularly in order to secure adherent electroplated coatings upon uranium metal. In accordance with the invention the uranium surface is pretreated by degreasing in trichloroethylene, followed by immersion in 25 to 50% nitric acid for several minutes, and then rinsed with running water, prior to pickling in trichloroacetic acid. The last treatment is best accomplished by making the uranium the anode in an aqueous solution of 50 per cent by weight trichloroacetic acid until work-distorted crystals or oxide present on the metal surface have been removed and the basic crystalline structure of the base metal has been exposed. Following these initial steps the metallic uranium is rinsed in dilute nitric acid and then electroplated with nickel. Adnerent firmly-bonded coatings of nickel are obtained.

  1. Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction

    NASA Astrophysics Data System (ADS)

    Zhu, Shiyang; Chu, H. S.; Lo, G. Q.; Bai, P.; Kwong, D. L.

    2012-02-01

    An all-silicon photodetector integrated in a silicon-on-insulator waveguide for the telecom regime is proposed. The device is based on internal photoemission from electrically floating metal silicide nanoparticles (NPs) embedded in the space charge region of a Si p-n junction. Numerical simulation indicates that the light absorption could be enhanced if localized surface plasmon resonances are excited on the metal silicide nanoparticles, thus enabling to shrink the detector's footprint to a submicron scale. A proof-of-concept detector fabricated using standard silicon complementary metal-oxide-semiconductor technology exhibits a peak responsivity of ˜30 mA/W at 5-V reverse bias and a 3-dB bandwidth of ˜6 GHz. It is expected that the overall performance would be significantly improved by optimization of both the detector's configuration and the fabrication parameters.

  2. Twisting phonons in complex crystals with quasi-one-dimensional substructures [Twisting Phonons in Higher Manganese Silicides with a Complex Nowotny Chimney Ladder Structure

    SciTech Connect

    Abernathy, Douglas L.; Ma, Jie; Yan, Jiaqiang; Delaire, Olivier A.; Chen, Xi; Weathers, Annie; Mukhopadhyay, Saikat; Shi, Li

    2015-04-15

    A variety of crystals contain quasi-one-dimensional substructures, which yield distinctive electronic, spintronic, optical and thermoelectric properties. There is a lack of understanding of the lattice dynamics that influences the properties of such complex crystals. Here we employ inelastic neutron scatting measurements and density functional theory calculations to show that numerous low-energy optical vibrational modes exist in higher manganese silicides, an example of such crystals. These optical modes, including unusually low-frequency twisting motions of the Si ladders inside the Mn chimneys, provide a large phase space for scattering acoustic phonons. A hybrid phonon and diffuson model is proposed to explain the low and anisotropic thermal conductivity of higher manganese silicides and to evaluate nanostructuring as an approach to further suppress the thermal conductivity and enhance the thermoelectric energy conversion efficiency. This discovery offers new insights into the structure-property relationships of a broad class of materials with quasi-one-dimensional substructures for various applications.

  3. Global Uranium And Thorium Resources: Are They Adequate To Satisfy Demand Over The Next Half Century?

    NASA Astrophysics Data System (ADS)

    Lambert, I. B.

    2012-04-01

    This presentation will consider the adequacy of global uranium and thorium resources to meet realistic nuclear power demand scenarios over the next half century. It is presented on behalf of, and based on evaluations by, the Uranium Group - a joint initiative of the OECD Nuclear Energy Agency and the International Atomic Energy Agency, of which the author is a Vice Chair. The Uranium Group produces a biennial report on Uranium Resources, Production and Demand based on information from some 40 countries involved in the nuclear fuel cycle, which also briefly reviews thorium resources. Uranium: In 2008, world production of uranium amounted to almost 44,000 tonnes (tU). This supplied approximately three-quarters of world reactor requirements (approx. 59,000 tU), the remainder being met by previously mined uranium (so-called secondary sources). Information on availability of secondary sources - which include uranium from excess inventories, dismantling nuclear warheads, tails and spent fuel reprocessing - is incomplete, but such sources are expected to decrease in market importance after 2013. In 2008, the total world Reasonably Assured plus Inferred Resources of uranium (recoverable at less than 130/kgU) amounted to 5.4 million tonnes. In addition, it is clear that there are vast amounts of uranium recoverable at higher costs in known deposits, plus many as yet undiscovered deposits. The Uranium Group has concluded that the uranium resource base is more than adequate to meet projected high-case requirements for nuclear power for at least half a century. This conclusion does not assume increasing replacement of uranium by fuels from reprocessing current reactor wastes, or by thorium, nor greater reactor efficiencies, which are likely to ameliorate future uranium demand. However, progressively increasing quantities of uranium will need to be mined, against a backdrop of the relatively small number of producing facilities around the world, geopolitical uncertainties and

  4. Atomic supersymmetry

    NASA Technical Reports Server (NTRS)

    Kostelecky, V. Alan

    1993-01-01

    Atomic supersymmetry is a quantum-mechanical supersymmetry connecting the properties of different atoms and ions. A short description of some established results in the subject are provided and a few recent developments are discussed including the extension to parabolic coordinates and the calculation of Stark maps using supersymmetry-based models.

  5. Atomic Calligraphy

    NASA Astrophysics Data System (ADS)

    Imboden, Matthias; Pardo, Flavio; Bolle, Cristian; Han, Han; Tareen, Ammar; Chang, Jackson; Christopher, Jason; Corman, Benjamin; Bishop, David

    2013-03-01

    Here we present a MEMS based method to fabricate devices with a small number of atoms. In standard semiconductor fabrication, a large amount of material is deposited, after which etching removes what is not wanted. This technique breaks down for structures that approach the single atom limit, as it is inconceivable to etch away all but one atom. What is needed is a bottom up method with single or near single atom precision. We demonstrate a MEMS device that enables nanometer position controlled deposition of gold atoms. A digitally driven plate is swept as a flux of gold atoms passes through an aperture. Appling voltages on four comb capacitors connected to the central plate by tethers enable nanometer lateral precision in the xy plane over 15x15 sq. microns. Typical MEMS structures have manufacturing resolutions on the order of a micron. Using a FIB it is possible to mill apertures as small as 10 nm in diameter. Assuming a low incident atomic flux, as well as an integrated MEMS based shutter with microsecond response time, it becomes possible to deposit single atoms. Due to their small size and low power consumption, such nano-printers can be mounted directly in a cryogenic system at ultrahigh vacuum to deposit clean quench condensed metallic structures.

  6. Photodegradation of uranium-citrate complex with uranium recovery

    SciTech Connect

    Dodge, C.J.; Francis, A.J. )

    1994-07-01

    Upon exposure to visible light, uranyl citrate complex showed photodegradation of citric acid to acetic acid and carbon dioxide, with the precipitation of uranium as uranium trioxide (UO[sub 3][center dot]2H[sub 2]O). The initial pH and presence of oxygen affected the rate and extent of photochemical degradation of the complex, the formation of intermediate organic degradation products, and uranium speciation. Under aerobic conditions at pH 3.5, acetic, acetoacetic, 3-oxoglutaric, and malonic acids and acetone were detected; at pH 6.0, 3-oxoglutaric and acetic acids were present. The uranyl U(VI) ion was reduced to uranous U(IV) ion and was subsequently reoxidized to the hexavalent form and precipitated out of solution as uranium trioxide. Uranium trioxide precipitate was insoluble at near-neutral pH and was soluble in acidic pH (<4.1). Under anaerobic conditions, the uranyl citrate complex showed only partial (57%) degradation, and uranium was present in the reduced form as U(IV). Excess citric acid retarded the precipitation of uranium. 26 refs., 9 figs., 1 tab.

  7. Critical analysis of world uranium resources

    USGS Publications Warehouse

    Hall, Susan; Coleman, Margaret

    2013-01-01

    report’s analysis of 141 mines that are operating or are being actively developed identifies 2.7 million tU of in-situ uranium resources worldwide, approximately 2.1 million tU recoverable after mining and milling losses were deducted. Sixty-four operating mines report a total of 1.4 million tU of in-situ RAR (about 1 million tU recoverable). Seventy-seven developing mines/production centers report 1.3 million tU in-situ Reasonably Assured Resources (RAR) (about 1.1 million tU recoverable), which have a reasonable chance of producing uranium within 5 years. Most of the production is projected to come from conventional underground or open pit mines as opposed to in-situ leach mines. Production capacity in operating mines is about 76,000 tU/yr, and in developing mines is estimated at greater than 52,000 tU/yr. Production capacity in operating mines should be considered a maximum as mines seldom produce up to licensed capacity due to operational difficulties. In 2010, worldwide mines operated at 70 percent of licensed capacity, and production has never exceeded 89 percent of capacity. The capacity in developing mines is not always reported. In this study 35 percent of developing mines did not report a target licensed capacity, so estimates of future capacity may be too low. The Organisation for Economic Co-operation and Development’s Nuclear Energy Agency (NEA) and International Atomic Energy Agency (IAEA) estimate an additional 1.4 million tU economically recoverable resources, beyond that identified in operating or developing mines identified in this report. As well, 0.5 million tU in subeconomic resources, and 2.3 million tU in the geologically less certain inferred category are identified worldwide. These agencies estimate 2.2 million tU in secondary sources such as government and commercial stockpiles and re-enriched uranium tails. They also estimate that unconventional uranium supplies (uraniferous phosphate and black shale deposits) may contain up to 7.6 million t

  8. Uranium in river water

    SciTech Connect

    Palmer, M.R. ); Edmond, J.M. )

    1993-10-01

    The concentration of dissolved uranium has been determined in over 250 river waters from the Orinoco, Amazon, and Ganges basins. Uranium concentrations are largely determined by dissolution of limestones, although weathering of black shales represents an important additional source in some basins. In shield terrains the level of dissolved U is transport limited. Data from the Amazon indicate that floodplains do not represent a significant source of U in river waters. In addition, the authors have determined dissolved U levels in forty rivers from around the world and coupled these data with previous measurements to obtain an estimate for the global flux of dissolved U to the oceans. The average concentration of U in river waters is 1.3 nmol/kg, but this value is biased by very high levels observed in the Ganges-Brahmaputra and Yellow rivers. When these river systems are excluded from the budget, the global average falls to 0.78 nmol/kg. The global riverine U flux lies in the range of 3-6 [times] 10[sup 7] mol/yr. The major uncertainty that restricts the accuracy of this estimate (and that of all other dissolved riverine fluxes) is the difficulty in obtaining representative samples from rivers which show large seasonal and annual variations in runoff and dissolved load.

  9. Simultaneous aluminizing and chromizing of steels to form (Fe,Cr){sub 3}Al coatings and Ge-doped silicide coatings of Cr-Zr base alloys

    SciTech Connect

    Zheng, M.; He, Y.R.; Rapp, R.A.

    1997-12-01

    A halide-activated cementation pack involving elemental Al and Cr powders has been used to achieve surface compositions of approximately Fe{sub 3}Al plus several percent Cr for low alloy steels (T11, T2 and T22) and medium carbon steel (1045 steel). A two-step treatment at 925 C and 1150 C yields the codeposition and diffusion of aluminum and chromium to form dense and uniform ferrite coatings of about 400 {micro}m thickness, while preventing the formation of a blocking chromium carbide at the substrate surfaces. Upon cyclic oxidation in air at 700 C, the coated steel exhibits a negligible 0.085 mg/cm{sup 2} weight gain for 1900 one-hour cycles. Virtually no attack was observed on coated steels tested at ABB in simulated boiler atmospheres at 500 C for 500 hours. But coatings with a surface composition of only 8 wt% Al and 6 wt% Cr suffered some sulfidation attack in simulated boiler atmospheres at temperatures higher than 500 C for 1000 hours. Two developmental Cr-Zr based Laves phase alloys (CN129-2 and CN117(Z)) were silicide/germanide coated. The cross-sections of the Ge-doped silicide coatings closely mimicked the microstructure of the substrate alloys. Cyclic oxidation in air at 1100 C showed that the Ge-doped silicide coating greatly improved the oxidation resistance of the Cr-Zr based alloys.

  10. PREPARATION OF URANIUM-ALUMINUM ALLOYS

    DOEpatents

    Moore, R.H.

    1962-09-01

    A process is given for preparing uranium--aluminum alloys from a solution of uranium halide in an about equimolar molten alkali metal halide-- aluminum halide mixture and excess aluminum. The uranium halide is reduced and the uranium is alloyed with the excess aluminum. The alloy and salt are separated from each other. (AEC)

  11. 31 CFR 540.316 - Uranium enrichment.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Uranium enrichment. 540.316 Section... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.316 Uranium enrichment. The term uranium enrichment means the process...

  12. 31 CFR 540.316 - Uranium enrichment.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Uranium enrichment. 540.316 Section... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.316 Uranium enrichment. The term uranium enrichment means the process...

  13. THE RECOVERY OF URANIUM FROM GAS MIXTURE

    DOEpatents

    Jury, S.H.

    1964-03-17

    A method of separating uranium from a mixture of uranium hexafluoride and other gases is described that comprises bringing the mixture into contact with anhydrous calcium sulfate to preferentially absorb the uranium hexafluoride on the sulfate. The calcium sulfate is then leached with a selective solvent for the adsorbed uranium. (AEC)

  14. 31 CFR 540.316 - Uranium enrichment.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Uranium enrichment. 540.316 Section... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.316 Uranium enrichment. The term uranium enrichment means the process...

  15. 31 CFR 540.316 - Uranium enrichment.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Uranium enrichment. 540.316 Section... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.316 Uranium enrichment. The term uranium enrichment means the process...

  16. 31 CFR 540.316 - Uranium enrichment.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Uranium enrichment. 540.316 Section... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY HIGHLY ENRICHED URANIUM (HEU) AGREEMENT ASSETS CONTROL REGULATIONS General Definitions § 540.316 Uranium enrichment. The term uranium enrichment means the process...

  17. Process for removing carbon from uranium

    DOEpatents

    Powell, George L.; Holcombe, Jr., Cressie E.

    1976-01-01

    Carbon contamination is removed from uranium and uranium alloys by heating in inert atmosphere to 700.degree.-1900.degree.C in effective contact with yttrium to cause carbon in the uranium to react with the yttrium. The yttrium is either in direct contact with the contaminated uranium or in indirect contact by means of an intermediate transport medium.

  18. Moderate positive spin Hall angle in uranium

    SciTech Connect

    Singh, Simranjeet; Anguera, Marta; Barco, Enrique del E-mail: cwmsch@rit.edu; Springell, Ross; Miller, Casey W. E-mail: cwmsch@rit.edu

    2015-12-07

    We report measurements of spin pumping and the inverse spin Hall effect in Ni{sub 80}Fe{sub 20}/uranium bilayers designed to study the efficiency of spin-charge interconversion in a super-heavy element. We employ broad-band ferromagnetic resonance on extended films to inject a spin current from the Ni{sub 80}Fe{sub 20} (permalloy) into the uranium layer, which is then converted into an electric field by the inverse spin Hall effect. Surprisingly, our results suggest a spin mixing conductance of order 2 × 10{sup 19} m{sup −2} and a positive spin Hall angle of 0.004, which are both merely comparable with those of several transition metals. These results thus support the idea that the electronic configuration may be at least as important as the atomic number in governing spin pumping across interfaces and subsequent spin Hall effects. In fact, given that both the magnitude and the sign are unexpected based on trends in d-electron systems, materials with unfilled f-electron orbitals may hold additional exploration avenues for spin physics.

  19. Atomic vapor laser isotope separation using resonance ionization

    SciTech Connect

    Comaskey, B.; Crane, J.; Erbert, G.; Haynam, C.; Johnson, M.; Morris, J.; Paisner, J.; Solarz, R.; Worden, E.

    1986-09-01

    Atomic vapor laser isotope separation (AVLIS) is a general and powerful technique. A major present application to the enrichment of uranium for light-water power-reactor fuel has been under development for over 10 years. In June 1985, the Department of Energy announced the selection of AVLIS as the technology to meet the nation's future need for enriched uranium. Resonance photoionization is the heart of the AVLIS process. We discuss those fundamental atomic parameters that are necessary for describing isotope-selective resonant multistep photoionization along with the measurement techniques that we use. We illustrate the methodology adopted with examples of other elements that are under study in our program.

  20. ELUTION OF URANIUM FROM RESIN

    DOEpatents

    McLEan, D.C.

    1959-03-10

    A method is described for eluting uranium from anion exchange resins so as to decrease vanadium and iron contamination and permit recycle of the major portion of the eluats after recovery of the uranium. Diminution of vanadium and iron contamination of the major portion of the uranium is accomplished by treating the anion exchange resin, which is saturated with uranium complex by adsorption from a sulfuric acid leach liquor from an ore bearing uranium, vanadium and iron, with one column volume of eluant prepared by passing chlorine into ammonium hydroxide until the chloride content is about 1 N and the pH is about 1. The resin is then eluted with 8 to 9 column volumes of 0.9 N ammonium chloride--0.1 N hydrochloric acid solution. The eluants are collected separately and treated with ammonia to precipitate ammonium diuranate which is filtered therefrom. The uranium salt from the first eluant is contaminated with the major portion of ths vanadium and iron and is reworked, while the uranium recovered from the second eluant is relatively free of the undesirable vanadium and irons. The filtrate from the first eluant portion is discarded. The filtrate from the second eluant portion may be recycled after adding hydrochloric acid to increase the chloride ion concentration and adjust the pH to about 1.