Analysis and modeling of optical crosstalk in InP-based Geiger-mode avalanche photodiode FPAs

NASA Astrophysics Data System (ADS)

Chau, Quan; Jiang, Xudong; Itzler, Mark A.; Entwistle, Mark; Piccione, Brian; Owens, Mark; Slomkowski, Krystyna

2015-05-01

Optical crosstalk is a major factor limiting the performance of Geiger-mode avalanche photodiode (GmAPD) focal plane arrays (FPAs). This is especially true for arrays with increased pixel density and broader spectral operation. We have performed extensive experimental and theoretical investigations on the crosstalk effects in InP-based GmAPD FPAs for both 1.06-μm and 1.55-μm applications. Mechanisms responsible for intrinsic dark counts are Poisson processes, and their inter-arrival time distribution is an exponential function. In FPAs, intrinsic dark counts and cross talk events coexist, and the inter-arrival time distribution deviates from purely exponential behavior. From both experimental data and computer simulations, we show the dependence of this deviation on the crosstalk probability. The spatial characteristics of crosstalk are also demonstrated. From the temporal and spatial distribution of crosstalk, an efficient algorithm to identify and quantify crosstalk is introduced.

Recent advances in very large area avalanche photodiodes

NASA Astrophysics Data System (ADS)

Squillante, Michael R.; Christian, James; Entine, Gerald; Farrell, Richard; Karger, Arieh M.; McClish, Mickel; Myers, Richard; Shah, Kanai S.; Taylor, David; Vanderpuye, Kofi; Waer, Peter; Woodring, Mitchell

2003-09-01

The Avalanche Photodiode (APD) is a unique device that combines the advantages of solid state photodetectors with those of high gain devices such as photomultiplier tubes (PMTs). APDs have internal gain that provides a high signal-to-noise ratio. APDs have high quantum efficiency, are fast, compact, and rugged. These properties make them suitable detectors for important applications such as LADAR, detection and identification toxic chemicals and bio-warfare agents, LIDAR fluorescence detection, stand-off laser induced breakdown spectroscopy (LIBS), and nuclear detectors and imagers. Recently there have been significant technical breakthroughs in fabricating very large APDs, APD arrays, and position sensitive APD arrays (PSAPD). Signal gain of over 10,000 has been achieved, single element APDs have been fabricated with active area greater than 40 cm2, monolithic pixelated arrays with up to 28 x 28 elements have been fabricated, and position sensitive APDs have been developed and tested. Additionally, significant progress has been made in improving the fabrication process to provide better uniformity and high yield, permitting cost effective manufacturing of APDs for reduced cost.

Implementation of Strategies to Improve the Reliability of III-Nitride Photodetectors towards the Realization of Visible and Solar-Blind Imaging Arrays

NASA Astrophysics Data System (ADS)

Bulmer, John J.

Ultraviolet (UV) radiation detectors are being heavily researched for applications in non-line-of-sight (NLOS) communication systems, flame monitoring, biological detection, and astronomical studies. These applications are currently being met by the use of Si-based photomultiplier tubes (PMTs), which are bulky, fragile, expensive and require the use of external filters to achieve true visible-blind and solar-blind operation. GaN and AlxGa1-xN avalanche photodiodes have been of great interest as a replacement for PMT technology. III-Nitride materials are radiation hard and have a wide, tunable bandgap that allows devices to operate in both visible and solar-blind regimes without the use of external filters. The high price and relative unavailability of bulk substrates demands heteroepitaxy of III-Nitride films on lattice-mismatched substrates, which leads to large dark current and premature breakdown in GaN and AlGaN avalanche photodiodes. While significant advances have been made towards the development of III-Nitride UV photodetectors using a variety of device designs, GaN-based avalanche photodiodes typically demonstrate poor device performance, low yield, and breakdown that results in permanent device damage. To address these challenges, a novel implantation technique was used to achieve edge termination and electric field redistribution at the contact edges in GaN and AlGaN p-i-n photodiode structures to enhance reliability. This process was successful at significantly reducing the levels of dark current over two orders of magnitude and resulted in improved device reliability. Further improvement in reliability of III-Nitride devices was also proposed and explored by a technique for isolation of electrically conductive structural defects. The large number of dislocations induced by the lattice and thermal mismatch with the substrate are known to be leakage current pathways and non-radiative recombination centers in III-Nitride films. This process selectively isolates conductive pathways in III-Nitrides using an electrochemical etch and novel foam passivation technique. Establishing improved photodiode performance and device reliability, 4x4 and 8x8 arrays of GaN p-i-n photodiodes were demonstrated and integrated with external circuitry to generate image patterns using 360nm illumination. This work represents significant progress towards the realization of reliable III-Nitride UV detectors arrays and future directions are proposed in order to demonstrate large-scale arrays for high-resolution ultraviolet imaging.

The performance of Geiger mode avalanche photo-diodes in free space laser communication links

NASA Astrophysics Data System (ADS)

Farrell, Thomas C.

2018-05-01

Geiger mode avalanche photo-diode (APD) arrays, when used as detectors in laser communication (lasercom) receivers, promise better performance at lower signal levels than APDs operated in the linear mode. In this paper, we describe the basic operation of the Geiger mode APD array as a lasercom detector, concentrating on aspects relevant to the link design engineer (rather than, for example, describing the details of the physics of the basic device operation itself). Equations are developed that describe the effects of defocus and hold-off time on the relation between the number of photons detected by the array and the output of photo-electron counts. We show how to incorporate these equations into a link budget. The resulting predictions are validated by comparison against simulation results. Finally, we compare the performance of linear mode APD based receivers and Geiger mode APD array based receivers. Results show the Geiger mode receivers yield better performance, in terms of probability of bit error, at lower signal levels, except on links where there is an exceptionally large amount of background noise. Under those conditions, not surprisingly, the hold-off time degrades performance.

Silicon avalanche photodiodes developed at the Institute of Electron Technology

NASA Astrophysics Data System (ADS)

Wegrzecka, Iwona; Wegrzecki, Maciej; Bar, Jan; Grynglas, Maria; Uszynski, Andrzej; Grodecki, Remigiusz; Grabiec, Piotr B.; Krzeminski, Sylwester; Budzynski, Tadeusz

2004-07-01

Silicon avalanche photodiodes (APDs) -- due to the effect of avalanche multiplication of carriers in their structure -- are most sensitive and fastest detectors of visible and near infrared radiation. Also the value of noise equivalent power NEP of these detectors is the smallest. In the paper, the design, technology and properties of the silicon avalanche photodiodes with a n+ - p - π - p+ epiplanar structure developed at the Institute of Electron Technology (ITE) are presented. The diameters of photosensitive area range from 0.3 mm to 5 mm. The ITE photodiodes are optimized for the detection of the 800 nm - 850 nm radiation, but the detailed research on spectral dependencies of the gain and noise parameters has revealed that the spectral operating range of the ITE photodiodes is considerable wider and achieves 550 - 1000 nm. These photodiodes can be used in detection of very weak and very fast optical signals. Presently in the world, the studies are carried out on applying the avalanche photodiodes in detection of X radiation and in the scintillation detection of nuclear radiation.

Construction and evaluation of a capillary array DNA sequencer based on a micromachined sheath-flow cuvette.

PubMed

Crabtree, H J; Bay, S J; Lewis, D F; Zhang, J; Coulson, L D; Fitzpatrick, G A; Delinger, S L; Harrison, D J; Dovichi, N J

2000-04-01

A capillary array electrophoresis DNA sequencer is reported based on a micromachined sheath-flow cuvette as the detection chamber. This cuvette is equipped with a set of micromachined features that hold the capillaries in precise registration to ensure uniform spacing between the capillaries, in order to generate uniform hydrodynamic flow in the cuvette. A laser beam excites all of the samples simultaneously, and a microscope objective images fluorescence onto a set of avalanche photodiodes, which operate in the analog mode. A high-gain transimpedance amplifier is used for each photodiode, providing high duty-cycle detection of fluorescence.

Design and Development of 256x256 Linear Mode Low-Noise Avalanche Photodiode Arrays

NASA Technical Reports Server (NTRS)

Yuan, Ping; Sudharsanan, Rengarajan; Bai, Xiaogang; Boisvert, Joseph; McDonald, Paul; Chang, James

2011-01-01

A larger format photodiode array is always desirable for many LADAR imaging applications. However, as the array format increases, the laser power or the lens aperture has to increase to maintain the same flux per pixel thus increasing the size, weight and power of the imaging system. In order to avoid this negative impact, it is essential to improve the pixel sensitivity. The sensitivity of a short wavelength infrared linear-mode avalanche photodiode (APD) is a delicate balance of quantum efficiency, usable gain, excess noise factor, capacitance, and dark current of APD as well as the input equivalent noise of the amplifier. By using InA1As as a multiplication layer in an InP-based APD, the ionization coefficient ratio, k, is reduced from 0.40 (lnP) to 0.22, and the excess noise is reduced by about 50%. An additional improvement in excess noise of 25% was achieved by employing an impact-ionization-engineering structure with a k value of 0.15. Compared with the traditional InP structure, about 30% reduction in the noise-equivalent power with the following amplifier can be achieved. Spectrolab demonstrated 30-um mesa APD pixels with a dark current less than 10 nA and a capacitance of 60 fF at gain of 10. APD gain uninformity determines the usable gain of most pixels in an array, which is critical to focal plane array sensitivity. By fine tuning the material growth and device process, a break-down-voltage standard deviation of 0.1 V and gain of 30 on individual pixels were demonstrated in our 256x256 linear-mode APD arrays.

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

DTIC Science & Technology

2016-01-20

Figure 7 4×4 GMAPD array wire bonded to CMOS timing circuits Figure 8 Low‐fill‐factor APD design used in lidar sensors The APD doping...epitaxial growth and the pixels are isolated by mesa etch. 128×32 lidar image sensors were built by bump bonding the APD arrays to a CMOS timing...passive image sensor with this large a format based on hybridization of a GMAPD array to a CMOS readout. Fig. 14 shows one of the first images taken

Evaluation of Space Radiation Effects on HgCdTe Avalanche Photodiode Arrays for Lidar Applications

NASA Technical Reports Server (NTRS)

Sun, Xiaoli; Abshire, James B.; Lauenstein, Jean-Marie; Sullivan, William III; Beck, Jeff; Hubbs, John E.

2018-01-01

We report the results from proton and gamma ray radiation testing of HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS for space lidar detectors. We tested these devices with both approximately 60 MeV protons and gamma rays, with and without the read out integrated circuit (ROIC). We also measured the transient responses with the device fully powered and with the APD gain from unity to greater than 1000. The detectors produced a large current impulse in response to each proton hit but the response completely recovered within 1 microsecond. The devices started to have persistent damage at a proton fluence of 7e10 protons/cm2, equivalent to 10 krad(Si) total ionization dose. The dark current became much higher after the device was warmed to room temperature and cooled to 80K again, but it completely annealed after baking at 85 C for several hours. These results showed the HgCdTe APD arrays are suitable for use in space lidar for typical Earth orbiting and planetary missions provided that provisions are made to heat the detector chip to 85 C for several hours after radiation damage becomes evident that system performance is impacted.

Reliable InP-based Geiger-mode avalanche photodiode arrays

NASA Astrophysics Data System (ADS)

Smith, Gary M.; McIntosh, K. Alex; Donnelly, Joseph P.; Funk, Joseph E.; Mahoney, Leonard J.; Verghese, Simon

2009-05-01

Arrays as large as 256 x 64 of single-photon counting avalanche photodiodes have been developed for defense applications in free-space communication and laser radar. Focal plane arrays (FPAs) sensitive to both 1.06 and 1.55 μm wavelength have been fabricated for these applications. At 240 K and 4 V overbias, the dark count rate (DCR) of 15 μm diameter devices is typically 250 Hz for 1.06 μm sensitive APDs and 1 kHz for 1.55 μm APDs. Photon detection efficiencies (PDE) at 4 V overbias are about 45% for both types of APDs. Accounting for microlens losses, the full FPA has a PDE of 30%. The reset time needed for a pixel to avoid afterpulsing at 240 K is about 3-4 μsec. These devices have been used by system groups at Lincoln Laboratory and other defense contractors for building operational systems. For these fielded systems the device reliability is a strong concern. Individual APDs as well as full arrays have been run for over 1000 hrs of accelerated testing to verify their stability. The reliability of these GM-APDs is shown to be under 10 FITs at operating temperatures of 250 K, which also corresponds to an MTTF of 17,100 yrs.

Studies of Avalanche Photodiodes (APDS) as Readout Devices for Scintillating Fibers for High Energy Gamma-Ray Astronomy Telescopes

NASA Technical Reports Server (NTRS)

Vasile, Stefan; Shera, Suzanne; Shamo, Denis

1998-01-01

New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive area diameter) and output in the 1-5 volt range. If successful, this feasibility study will make possible the development of a scintillating fiber detector with unsurpassed sensitivity, extremely low power usage, a crucial factor of merit for space based sensors and telescopes.

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

PubMed

Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

2016-08-22

We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10^-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

Impulse response measurement in the HgCdTe avalanche photodiode

NASA Astrophysics Data System (ADS)

Singh, Anand; Pal, Ravinder

2018-04-01

HgCdTe based mid-wave infrared focal plane arrays (MWIR FPAs) are being developed for high resolution imaging and range determination of distant camouflaged targets. Effect of bandgap grading on the response time in the n+/ν/p+ HgCdTe electron avalanche photodiode (e-APD) is evaluated using impulse response measurement. Gain normalized dark current density of 2 × 10-9 A/cm2 at low reverse bias for passive mode and 2 × 10-4 A/cm2 at -8 V for active mode is measured in the fabricated APD device, yielding high gain bandwidth product of 2.4 THZ at the maximum gain. Diffusion of carriers is minimized to achieve transit time limited impulse response by introducing composition grading in the HgCdTe epilayer. The noise equivalent photon performance less than one is achievable in the FPA that is suitable for active cum passive imaging applications.

Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

NASA Technical Reports Server (NTRS)

Sullivan, William, III; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry

2015-01-01

An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes

DOE PAGES

Martinez, Nicholas J. D.; Derose, Christopher T.; Brock, Reinhard W.; ...

2016-08-09

Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10 –12, in the range from –18.3 dBm to –12 dBm received optical powermore » into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.« less

Infrared sensors for Earth observation missions

NASA Astrophysics Data System (ADS)

Ashcroft, P.; Thorne, P.; Weller, H.; Baker, I.

2007-10-01

SELEX S&AS is developing a family of infrared sensors for earth observation missions. The spectral bands cover shortwave infrared (SWIR) channels from around 1μm to long-wave infrared (LWIR) channels up to 15μm. Our mercury cadmium telluride (MCT) technology has enabled a sensor array design that can satisfy the requirements of all of the SWIR and medium-wave infrared (MWIR) bands with near-identical arrays. This is made possible by the combination of a set of existing technologies that together enable a high degree of flexibility in the pixel geometry, sensitivity, and photocurrent integration capacity. The solution employs a photodiode array under the control of a readout integrated circuit (ROIC). The ROIC allows flexible geometries and in-pixel redundancy to maximise operability and reliability, by combining the photocurrent from a number of photodiodes into a single pixel. Defective or inoperable diodes (or "sub-pixels") can be deselected with tolerable impact on the overall pixel performance. The arrays will be fabricated using the "loophole" process in MCT grown by liquid-phase epitaxy (LPE). These arrays are inherently robust, offer high quantum efficiencies and have been used in previous space programs. The use of loophole arrays also offers access to SELEX's avalanche photodiode (APD) technology, allowing low-noise, highly uniform gain at the pixel level where photon flux is very low.

Ultralow-noise readout circuit with an avalanche photodiode: toward a photon-number-resolving detector.

PubMed

Tsujino, Kenji; Akiba, Makoto; Sasaki, Masahide

2007-03-01

The charge-integration readout circuit was fabricated to achieve an ultralow-noise preamplifier for photoelectrons generated in an avalanche photodiode with linear mode operation at 77 K. To reduce the various kinds of noise, the capacitive transimpedance amplifier was used and consisted of low-capacitance circuit elements that were cooled with liquid nitrogen. As a result, the readout noise is equal to 3.0 electrons averaged for a period of 40 ms. We discuss the requirements for avalanche photodiodes to achieve photon-number-resolving detectors below this noise level.

Relative degradation of near infrared avalanche photodiodes from proton irradiation

NASA Technical Reports Server (NTRS)

Becker, Heidi; Johnston, Allan H.

2004-01-01

InGaAs and Ge avalanche photodiodes are compared for the effects of 63-MeV protons on dark current. Differences in displacement damage factors are discussed as they relate to structural differences between devices.

Radiation and Temperature Hard Multi-Pixel Avalanche Photodiodes

NASA Technical Reports Server (NTRS)

Bensaoula, Abdelhak (Inventor); Starikov, David (Inventor); Pillai, Rajeev (Inventor)

2017-01-01

The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.

A 1.5k x 1.5k class photon counting HgCdTe linear avalanche photo-diode array for low background space astronomy in the 1-5micron infrared

NASA Astrophysics Data System (ADS)

Hall, Donald

Under a current award, NASA NNX 13AC13G "EXTENDING THE ASTRONOMICAL APPLICATION OF PHOTON COUNTING HgCdTe LINEAR AVALANCHE PHOTODIODE ARRAYS TO LOW BACKGROUND SPACE OBSERVATIONS" UH has used Selex SAPHIRA 320 x 256 MOVPE L-APD HgCdTe arrays developed for Adaptive Optics (AO) wavefront (WF) sensing to investigate the potential of this technology for low background space astronomy applications. After suppressing readout integrated circuit (ROIC) glow, we have placed upper limits on gain normalized dark current of 0.01 e-/sec at up to 8 volts avalanche bias, corresponding to avalanche gain of 5, and have operated with avalanche gains of up to several hundred at higher bias. We have also demonstrated detection of individual photon events. The proposed investigation would scale the format to 1536 x 1536 at 12um (the largest achievable in a standard reticule without requiring stitching) while incorporating reference pixels required at these low dark current levels. The primary objective is to develop, produce and characterize a 1.5k x 1.5k at 12um pitch MOVPE HgCdTe L-APD array, with nearly 30 times the pixel count of the 320 x 256 SAPHIRA, optimized for low background space astronomy. This will involve: 1) Selex design of a 1.5k x 1.5k at 12um pitch ROIC optimized for low background operation, silicon wafer fabrication at the German XFab foundry in 0.35 um 3V3 process and dicing/test at Selex, 2) provision by GL Scientific of a 3-side close-buttable carrier building from the heritage of the HAWAII xRG family, 3) Selex development and fabrication of 1.5k x 1.5k at 12 um pitch MOVPE HgCdTe L-APD detector arrays optimized for low background applications, 4) hybridization, packaging into a sensor chip assembly (SCA) with initial characterization by Selex and, 5) comprehensive characterization of low background performance, both in the laboratory and at ground based telescopes, by UH. The ultimate goal is to produce and eventually market a large format array, the L-APD equivalent of the Teledyne H1RG and H2RG, able to achieve sub-electron read noise and count 1 - 5 um photons with high quantum efficiency and low dark count rate while preserving their Poisson statistics and noise.

Theory of single-photon detectors employing smart strategies of detection

NASA Astrophysics Data System (ADS)

Silva, João Batista Rosa; Ramos, Rubens Viana

2005-11-01

Single-photon detectors have become more important with the advent of set-ups for optical communication using single-photon pulses, mainly quantum key distribution. The performance of quantum key distribution systems depends strongly on the performance of single-photon detectors. In this paper, aiming to overcome the afterpulsing that limits strongly the maximal transmission rate of quantum key distribution systems, three smart strategies for single-photon detection are discussed using analytical and numerical procedures. The three strategies are: hold-off time conditioned to avalanche presence, termed the Norwegian strategy, using one avalanche photodiode, using two raffled avalanche photodiodes and using two switched avalanche photodiodes. Finally we give examples using these strategies in a quantum key distribution set-up.

Compact and high-sensitivity 100-Gb/s (4 × 25 Gb/s) APD-ROSA with a LAN-WDM PLC demultiplexer.

PubMed

Yoshimatsu, Toshihide; Nada, Masahiro; Oguma, Manabu; Yokoyama, Haruki; Ohno, Tetsuichiro; Doi, Yoshiyuki; Ogawa, Ikuo; Takahashi, Hiroshi; Yoshida, Eiji

2012-12-10

We demonstrate an integrated 100 GbE receiver optical sub-assembly (ROSA) that incorporates a monolithic four-channel avalanche photodiode (APD) array and a planer lightwave circuit (PLC) based LAN-WDM demultiplexer. A record minimum receiver sensitivity of -20 dBm and 50-km error-free SMF transmission without an optical amplifier have been achieved.

Solid State Research

DTIC Science & Technology

1997-08-15

superconducting resonators that have been demonstrated use microstrip circuits of YBCO at 77 K and niobium at 4 K coupled to polycrystalline magnetic garnet... demagnetizing factor in plane along the direction of propagation, and Ny is the effective demagnetizing factor of the rf magnetization component normal to...Geiger-Mode Avalanche Photodiode Arrays for Imaging Laser Radar 31 6. ANALOG DEVICE TECHNOLOGY 35 6.1 Tunable Superconducting Resonators Using Ferrite

Radiation Response of Emerging High Gain, Low Noise Detectors

NASA Technical Reports Server (NTRS)

Becker, Heidi N.; Farr, William H; Zhu, David Q.

2007-01-01

Data illustrating the radiation response of emerging high gain, low noise detectors are presented. Ionizing dose testing of silicon internal discrete avalanche photodiodes, and 51-MeV proton testing of InGaAs/InAlAs avalanche photodiodes operated in Geiger mode are discussed.

Photoionization of Trapped Carriers in Avalanche Photodiodes to Reduce Afterpulsing During Geiger-Mode Photon Counting

NASA Technical Reports Server (NTRS)

Krainak, Michael A.

2005-01-01

We reduced the afterpulsing probability by a factor of five in a Geiger-mode photon-counting InGaAs avalanche photodiode by using sub-band-gap (lambda = 1.95 micron) laser diode illumination, which we believe photoionizes the trapped carriers.

The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

NASA Astrophysics Data System (ADS)

Wegrzecka, Iwona; Wegrzecki, Maciej

1999-04-01

The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping

NASA Astrophysics Data System (ADS)

Maddox, S. J.; Sun, W.; Lu, Z.; Nair, H. P.; Campbell, J. C.; Bank, S. R.

2012-10-01

We reduced the room temperature dark current in an InAs avalanche photodiode by increasing the p-type contact doping, resulting in an increased energetic barrier to minority electron injection into the p-region, which is a significant source of dark current at room temperature. In addition, by improving the molecular beam epitaxy growth conditions, we reduced the background doping concentration and realized depletion widths as wide as 5 μm at reverse biases as low as 1.5 V. These improvements culminated in low-noise InAs avalanche photodiodes exhibiting a room temperature multiplication gain of ˜80, at a record low reverse bias of 12 V.

AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes

NASA Astrophysics Data System (ADS)

Ren, Min; Maddox, Scott J.; Woodson, Madison E.; Chen, Yaojia; Bank, Seth R.; Campbell, Joe C.

2016-05-01

We report AlxIn1-xAsySb1-y separate absorption, charge, and multiplication avalanche photodiodes (APDs) that operate in the short-wavelength infrared spectrum. They exhibit excess noise factor less or equal to that of Si and the low dark currents typical of III-V compound APDs.

The blocking probability of Geiger-mode avalanche photo-diodes

NASA Technical Reports Server (NTRS)

Moision, Bruce; Srinivasan, Meera; Hamkins, Jon

2005-01-01

When a photo is detected by a Geiger-mode avalanche photo-diode (GMAPD), the detector is rendered inactive, or blocked, for a certain period of time. In this paper we derive the blocking probability for a GMAPD whose input is either an unmodulated, Benoulli modulated or pulse-position-modulated Poisson process.

32 bit digital optical computer - A hardware update

NASA Technical Reports Server (NTRS)

Guilfoyle, Peter S.; Carter, James A., III; Stone, Richard V.; Pape, Dennis R.

1990-01-01

Such state-of-the-art devices as multielement linear laser diode arrays, multichannel acoustooptic modulators, optical relays, and avalanche photodiode arrays, are presently applied to the implementation of a 32-bit supercomputer's general-purpose optical central processing architecture. Shannon's theorem, Morozov's control operator method (in conjunction with combinatorial arithmetic), and DeMorgan's law have been used to design an architecture whose 100 MHz clock renders it fully competitive with emerging planar-semiconductor technology. Attention is given to the architecture's multichannel Bragg cells, thermal design and RF crosstalk considerations, and the first and second anamorphic relay legs.

Optimization of eyesafe avalanche photodiode lidar for automobile safety and autonomous navigation systems

NASA Astrophysics Data System (ADS)

Williams, George M.

2017-03-01

Newly emerging accident-reducing, driver-assistance, and autonomous-navigation technology for automobiles is based on real-time three-dimensional mapping and object detection, tracking, and classification using lidar sensors. Yet, the lack of lidar sensors suitable for meeting application requirements appreciably limits practical widespread use of lidar in trucking, public livery, consumer cars, and fleet automobiles. To address this need, a system-engineering perspective to eyesafe lidar-system design for high-level advanced driver-assistance sensor systems and a design trade study including 1.5-μm spot-scanned, line-scanned, and flash-lidar systems are presented. A cost-effective lidar instrument design is then proposed based on high-repetition-rate diode-pumped solid-state lasers and high-gain, low-excess-noise InGaAs avalanche photodiode receivers and focal plane arrays. Using probabilistic receiver-operating-characteristic analysis, derived from measured component performance, a compact lidar system is proposed that is capable of 220 m ranging with 5-cm accuracy, which can be readily scaled to a 360-deg field of regard.

Geiger mode avalanche photodiodes for microarray systems

NASA Astrophysics Data System (ADS)

Phelan, Don; Jackson, Carl; Redfern, R. Michael; Morrison, Alan P.; Mathewson, Alan

2002-06-01

New Geiger Mode Avalanche Photodiodes (GM-APD) have been designed and characterized specifically for use in microarray systems. Critical parameters such as excess reverse bias voltage, hold-off time and optimum operating temperature have been experimentally determined for these photon-counting devices. The photon detection probability, dark count rate and afterpulsing probability have been measured under different operating conditions. An active- quench circuit (AQC) is presented for operating these GM- APDs. This circuit is relatively simple, robust and has such benefits as reducing average power dissipation and afterpulsing. Arrays of these GM-APDs have already been designed and together with AQCs open up the possibility of having a solid-state microarray detector that enables parallel analysis on a single chip. Another advantage of these GM-APDs over current technology is their low voltage CMOS compatibility which could allow for the fabrication of an AQC on the same device. Small are detectors have already been employed in the time-resolved detection of fluorescence from labeled proteins. It is envisaged that operating these new GM-APDs with this active-quench circuit will have numerous applications for the detection of fluorescence in microarray systems.

Vacuum ultraviolet instrumentation for solar irradiance and thermospheric airglow

NASA Technical Reports Server (NTRS)

Woods, Thomas N.; Rottman, Gary J.; Bailey, Scott M.; Solomon, Stanley C.

1993-01-01

A NASA sounding rocket experiment was developed to study the solar extreme ultraviolet (EUV) spectral irradiance and its effect on the upper atmosphere. Both the solar flux and the terrestrial molecular nitrogen via the Lyman-Birge-Hopfield bands in the far ultraviolet (FUV) were measured remotely from a sounding rocket on October 27, 1992. The rocket experiment also includes EUV instruments from Boston University (Supriya Chakrabarti), but only the National Center for Atmospheric Research (NCAR)/University of Colorado (CU) four solar instruments and one airglow instrument are discussed here. The primary solar EUV instrument is a 1/4 meter Rowland circle EUV spectrograph which has flown on three rockets since 1988 measuring the solar spectral irradiance from 30 to 110 nm with 0.2 nm resolution. Another solar irradiance instrument is an array of six silicon XUV photodiodes, each having different metallic filters coated directly on the photodiodes. This photodiode system provides a spectral coverage from 0.1 to 80 nm with about 15 nm resolution. The other solar irradiance instrument is a silicon avalanche photodiode coupled with pulse height analyzer electronics. This avalanche photodiode package measures the XUV photon energy providing a solar spectrum from 50 to 12,400 eV (25 to 0.1 nm) with an energy resolution of about 50 eV. The fourth solar instrument is an XUV imager that images the sun at 17.5 nm with a spatial resolution of 20 arc-seconds. The airglow spectrograph measures the terrestrial FUV airglow emissions along the horizon from 125 to 160 nm with 0.2 nm spectral resolution. The photon-counting CODACON detectors are used for three of these instruments and consist of coded arrays of anodes behind microchannel plates. The one-dimensional and two-dimensional CODACON detectors were developed at CU by Dr. George Lawrence. The pre-flight and post-flight photometric calibrations were performed at our calibration laboratory and at the Synchrotron Ultraviolet Radiation Facility (SURF) at the National Institute of Standards and Technology (NIST) in Gaithersburg, Maryland.

Low-Noise Free-Running High-Rate Photon-Counting for Space Communication and Ranging

NASA Technical Reports Server (NTRS)

Lu, Wei; Krainak, Michael A.; Yang, Guangning; Sun, Xiaoli; Merritt, Scott

2016-01-01

We present performance data for low-noise free-running high-rate photon counting method for space optical communication and ranging. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We successfully measured real-time communication performance using both the 2 detected-photon threshold and logic AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects without using other method of Time Gating The HgCdTe APD array routinely demonstrated very high photon detection efficiencies ((is) greater than 50%) at near infrared wavelength. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output. NASA GSFC has tested both detectors for their potential application for space communications and ranging. We developed and compare their performances using both the 2 detected photon threshold and coincidence methods.

Low-Noise Free-Running High-Rate Photon-Counting for Space Communication and Ranging

NASA Technical Reports Server (NTRS)

Lu, Wei; Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Merritt, Scott

2016-01-01

We present performance data for low-noise free-running high-rate photon counting method for space optical communication and ranging. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We successfully measured real-time communication performance using both the 2 detected-photon threshold and logic AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects without using other method of Time Gating The HgCdTe APD array routinely demonstrated very high photon detection efficiencies (50) at near infrared wavelength. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output. NASA GSFC has tested both detectors for their potential application for space communications and ranging. We developed and compare their performances using both the 2 detected photon threshold and coincidence methods.

Determination of the excess noise of avalanche photodiodes integrated in 0.35-μm CMOS technologies

NASA Astrophysics Data System (ADS)

Jukić, Tomislav; Brandl, Paul; Zimmermann, Horst

2018-04-01

The excess noise of avalanche photodiodes (APDs) integrated in a high-voltage (HV) CMOS process and in a pin-photodiode CMOS process, both with 0.35-μm structure sizes, is described. A precise excess noise measurement technique is applied using a laser source, a spectrum analyzer, a voltage source, a current meter, a cheap transimpedance amplifier, and a personal computer with a MATLAB program. In addition, usage for on-wafer measurements is demonstrated. The measurement technique is verified with a low excess noise APD as a reference device with known ratio k = 0.01 of the impact ionization coefficients. The k-factor of an APD developed in HV CMOS is determined more accurately than known before. In addition, it is shown that the excess noise of the pin-photodiode CMOS APD depends on the optical power for avalanche gains above 35 and that modulation doping can suppress this power dependence. Modulation doping, however, increases the excess noise.

Charge Gain, Voltage Gain, and Node Capacitance of the SAPHIRA Detector Pixel by Pixel

NASA Astrophysics Data System (ADS)

Pastrana, Izabella M.; Hall, Donald N. B.; Baker, Ian M.; Jacobson, Shane M.; Goebel, Sean B.

2018-01-01

The University of Hawai`i Institute for Astronomy has partnered with Leonardo (formerly Selex) in the development of HgCdTe linear mode avalanche photodiode (L-APD) SAPHIRA detectors. The SAPHIRA (Selex Avalanche Photodiode High-speed Infra-Red Array) is ideally suited for photon-starved astronomical observations, particularly near infrared (NIR) adaptive optics (AO) wave-front sensing. I have measured the stability, and linearity with current, of a 1.7-um (10% spectral bandpass) infrared light emitting diode (IR LED) used to illuminate the SAPHIRA and have then utilized this source to determine the charge gain (in e-/ADU), voltage gain (in uV/ADU), and node capacitance (in fF) for each pixel of the 320x256@24um SAPHIRA. These have previously only been averages over some sub-array. Determined from the ratio of the temporal averaged signal level to variance under constant 1.7-um LED illumination, I present the charge gain pixel-by-pixel in a 64x64 sub-array at the center of the active area of the SAPHIRA (analyzed separately as four 32x32 sub-arrays) to be about 1.6 e-/ADU (σ=0.5 e-/ADU). Additionally, the standard technique of varying the pixel reset voltage (PRV) in 10 mV increments and recording output frames for the same 64x64 subarray found the voltage gain per pixel to be about 11.7 uV/ADU (σ=0.2 uV/ADU). Finally, node capacitance was found to be approximately 23 fF (σ=6 fF) utilizing the aforementioned charge and voltage gain measurements. I further discuss the linearity measurements of the 1.7-um LED used in the charge gain characterization procedure.

25-Gbit/s burst-mode optical receiver using high-speed avalanche photodiode for 100-Gbit/s optical packet switching.

PubMed

Nada, Masahiro; Nakamura, Makoto; Matsuzaki, Hideaki

2014-01-13

25-Gbit/s error-free operation of an optical receiver is successfully demonstrated against burst-mode optical input signals without preambles. The receiver, with a high-sensitivity avalanche photodiode and burst-mode transimpedance amplifier, exhibits sufficient receiver sensitivity and an extremely quick response suitable for burst-mode operation in 100-Gbit/s optical packet switching.

Recent progress in high gain InAs avalanche photodiodes (Presentation Recording)

NASA Astrophysics Data System (ADS)

Bank, Seth; Maddox, Scott J.; Sun, Wenlu; Nair, Hari P.; Campbell, Joe C.

2015-08-01

InAs possesses nearly ideal material properties for the fabrication of near- and mid-infrared avalanche photodiodes (APDs), which result in strong electron-initiated impact ionization and negligible hole-initiated impact ionization [1]. Consequently, InAs multiplication regions exhibit several appealing characteristics, including extremely low excess noise factors and bandwidth independent of gain [2], [3]. These properties make InAs APDs attractive for a number of near- and mid-infrared sensing applications including remote gas sensing, light detection and ranging (LIDAR), and both active and passive imaging. Here, we discuss our recent advances in the growth and fabrication of high gain, low noise InAs APDs. Devices yielded room temperature multiplication gains >300, with much reduced (~10x) lower dark current densities. We will also discuss a likely key contributor to our current performance limitations: silicon diffusion into the intrinsic (multiplication) region from the underlying n-type layer during growth. Future work will focus on increasing the intrinsic region thickness, targeting gains >1000. This work was supported by the Army Research Office (W911NF-10-1-0391). [1] A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, "Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes," Applied Physics Letters, vol. 93, p. 111107, 2008. [2] A. R. J. Marshall, A. Krysa, S. Zhang, A. S. Idris, S. Xie, J. P. R. David, and C. H. Tan, "High gain InAs avalanche photodiodes," in 6th EMRS DTC Technical Conference, Edinburgh, Scotland, UK, 2009. [3] S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping," Applied Physics Letters, vol. 101, no. 15, pp. 151124-151124-3, Oct. 2012.

Temperature characteristics of silicon avalanche photodiodes

NASA Astrophysics Data System (ADS)

Wegrzecka, Iwona; Grynglas, Maria; Wegrzecki, Maciej; Bar, Jan; Grodecki, Remigiusz

2001-08-01

The paper presents the results of studies on temperature dependence of such parameters as a dark current, noise current, gain, noise equivalent power and detectivity of silicon epiplanar avalanche photodiodes at the ITE. The photodiode reach-through structure is of an nPLU-p-(pi) - p+ type with an under-contact ring and a channel stopper. The temperature range was stretching from -40 C to +40 C. Specially developed for this purpose an automatic system for low noise measurements was used. A two- stage micro-cooler with a Peltier's element was applied to control and stabilize the temperature of measured structures.

Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

NASA Astrophysics Data System (ADS)

Britvitch, I.; Johnson, I.; Renker, D.; Stoykov, A.; Lorenz, E.

2007-02-01

Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate.

Nonlinear Time-Variant Response in an Avalanche Photodiode Array Based Laser Detection and Ranging System

DTIC Science & Technology

2007-03-01

the system is treated in a gray-box manner, with limited known parameters. The analytical approach which follows was used to identify the deviations be...effect spherical aberration, coma and astigmatism is to blur the image by introducing light from outside each pixel’s IFOV. Petzval field curvature and...difference between the two records is not the linear difference of the incident light levels. Even dark current subtraction must be treated with caution

A new detector for mass spectrometry: direct detection of low energy ions using a multi-pixel photon counter.

PubMed

Wilman, Edward S; Gardiner, Sara H; Nomerotski, Andrei; Turchetta, Renato; Brouard, Mark; Vallance, Claire

2012-01-01

A new type of ion detector for mass spectrometry and general detection of low energy ions is presented. The detector consists of a scintillator optically coupled to a single-photon avalanche photodiode (SPAD) array. A prototype sensor has been constructed from a LYSO (Lu(1.8)Y(0.2)SiO(5)(Ce)) scintillator crystal coupled to a commercial SPAD array detector. As proof of concept, the detector is used to record the time-of-flight mass spectra of butanone and carbon disulphide, and the dependence of detection sensitivity on the ion kinetic energy is characterised.

Negative feedback avalanche diode

NASA Technical Reports Server (NTRS)

Itzler, Mark Allen (Inventor)

2010-01-01

A single-photon avalanche detector is disclosed that is operable at wavelengths greater than 1000 nm and at operating speeds greater than 10 MHz. The single-photon avalanche detector comprises a thin-film resistor and avalanche photodiode that are monolithically integrated such that little or no additional capacitance is associated with the addition of the resistor.

SWIR HgCdTe avalanche photiode focal plane array performances evaluation

NASA Astrophysics Data System (ADS)

de Borniol, E.; Rothman, J.; Salveti, F.; Feautrier, P.

2017-11-01

One of the main challenges of modern astronomical instruments like adaptive optics (AO) systems or fringe trackers is to deal with the very low photons flux detection scenarios. The typical timescale of atmospheric turbulences being in the range of some tens of milliseconds, infrared wavefront sensors for AO systems needs frame rates higher than 1 KHz leading to integration times lower than 1 ms. This integration time associated with a low irradiance results in a few number of integrated photons per frame per pixel. To preserve the information coming from this weak signal, the focal plane array (FPA) has to present a low read out noise, a high quantum efficiency and a low dark current. Up to now, the output noise of high speed near infrared sensors is limited by the silicon read out circuit noise. The use of HgCdTe avalanche photodiodes with high gain at moderate reverse bias and low excess noise seems then a logical way to reduce the impact of the read noise on images signal to noise ratio. These low irradiance passive imaging applications with integration times in the millisecond range needs low photodiode dark current and low background current. These requirements lead to the choice of the photodiode cut off wavelength. The short wave infrared (SWIR) around 3 μm is a good compromise between the gain that can be obtain for a given APD bias and the background and dark current. The CEA LETI HgCdTe APD technology, and a fine analysis of the gain curve characteristic are presented in [1] and won't be detailed here. The response time of the APD is also a key factor for a high frame rate FPA. This parameter has been evaluated in [2] and the results shows cut off frequencies in the GHz range. In this communication we report the performances of a SWIR APD FPA designed and fabricated by CEA LETI and SOFRADIR for astrophysical applications. This development was made in the frame of RAPID, a 4 years R&D project funded by the French FUI (Fond Unique Interministériel). This project involves industrial and academic partners from the field of advanced infrared focal plane arrays fabrication (SOFRADIR and CEA LETI) and of astronomical/defense institutes (IPAG, LAM, ONERA). The goal of this program is to develop a fast and low noise SWIR camera for astronomical fast applications like adaptive optics wavefront sensing and fringe tracking for astronomical interferometers [3]. The first batch of FPA's was based on liquid-phase epitaxy (LPE) grown photodiode arrays with 3 μm cut off wavelength. In order to get higher avalanche gain for a given photodiode reverse bias voltage, we have made a second batch with a cadmium composition leading to 3.3 μm cut off wavelength (λc). This paper described the read out circuit in the next section. The aim section III is to find the critical parameter that has to be measured to evaluate the signal to noise ratio (SNR) of an APD FPA. The main electro optical characteristics of an FPA based on 3.3μm cut off wavelength APDs are reported in "Rapid FPAs characterisation" section. The dark current evolution with temperature of a 3 μm FPA high and low APD bias is also detailed in this section.

Short-Wave Infrared HgCdTe Electron Avalanche Photodiodes for Gated Viewing

NASA Astrophysics Data System (ADS)

Sieck, A.; Benecke, M.; Eich, D.; Oelmaier, R.; Wendler, J.; Figgemeier, H.

2018-06-01

Short-wave infrared (SWIR) HgCdTe electron avalanche photodiodes (eAPDs) with different doping profiles have been characterized for use in SWIR gated viewing systems. Gated viewing offers enhanced image contrast in scenes with clutter from the foreground or background. HgCdTe-based eAPDs show exponential gain-voltage characteristics and low excess noise and are, therefore, well suited for active imaging applications. The gain achievable at a fixed reverse voltage varies with the bandgap of the Hg1-xCdxTe detector material. We analyze current-voltage and gain-voltage plots measured on SWIR Hg1-xCdxTe eAPDs with x = 0.45, corresponding to a cutoff wavelength of 2.55 μm at 150 K. The cutoff has been chosen as a trade-off between achievable APD gain and operating temperature for SWIR gated-viewing systems with target distances of about 1000 m. Focal plane arrays with a readout-integrated circuit featuring a fast internal clock have been built and their performance with respect to gated viewing applications has been evaluated on a laboratory demonstrator for short distances. Future plans for a field demonstrator for distances up to 1000 m are described briefly at the end.

Nano-Multiplication-Region Avalanche Photodiodes and Arrays

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

2008-01-01

Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be about 0.1 microns in diameter and between 0.3 and 0.4 nm high. The top layer in the reach-through structure would be heavily doped with electron-donor impurities (n+-doped) to make it act as a cathode. A layer beneath the cathode, between 0.1 and 0.2 nm thick, would be p-doped to a concentration .10(exp 17)cu cm. A thin n+-doped polysilicon pad would be formed on the top of the cathode to protect the cathode against erosion during a metal-silicon alloying step that would be part of the process of fabricating the array.

Characterization of Geiger mode avalanche photodiodes for fluorescence decay measurements

NASA Astrophysics Data System (ADS)

Jackson, John C.; Phelan, Don; Morrison, Alan P.; Redfern, R. Michael; Mathewson, Alan

2002-05-01

Geiger mode avalanche photodiodes (APD) can be biased above the breakdown voltage to allow detection of single photons. Because of the increase in quantum efficiency, magnetic field immunity, robustness, longer operating lifetime and reduction in costs, solid-state detectors capable of operating at non-cryogenic temperatures and providing single photon detection capabilities provide attractive alternatives to the photomultiplier tube (PMT). Shallow junction Geiger mode APD detectors provide the ability to manufacture photon detectors and detector arrays with CMOS compatible processing steps and allows the use of novel Silicon-on-Insulator(SoI) technology to provide future integrated sensing solutions. Previous work on Geiger mode APD detectors has focused on increasing the active area of the detector to make it more PMT like, easing the integration of discrete reaction, detection and signal processing into laboratory experimental systems. This discrete model for single photon detection works well for laboratory sized test and measurement equipment, however the move towards microfluidics and systems on a chip requires integrated sensing solutions. As we move towards providing integrated functionality of increasingly nanoscopic sized emissions, small area detectors and detector arrays that can be easily integrated into marketable systems, with sensitive small area single photon counting detectors will be needed. This paper will demonstrate the 2-dimensional and 3-dimensional simulation of optical coupling that occurs in Geiger mode APDs. Fabricated Geiger mode APD detectors optimized for fluorescence decay measurements were characterized and preliminary results show excellent results for their integration into fluorescence decay measurement systems.

Novel Photon-Counting Detectors for Free-Space Communication

NASA Technical Reports Server (NTRS)

Krainak, M. A.; Yang, G.; Sun, X.; Lu, W.; Merritt, S.; Beck, J.

2016-01-01

We present performance data for novel photon-counting detectors for free space optical communication. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We present and compare dark count, photon-detection efficiency, wavelength response and communication performance data for these detectors. We successfully measured real-time communication performance using both the 2 detected-photon threshold and AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects. The HgCdTe APD array routinely demonstrated photon detection efficiencies of greater than 50% across 5 arrays, with one array reaching a maximum PDE of 70%. We performed high-resolution pixel-surface spot scans and measured the junction diameters of its diodes. We found that decreasing the junction diameter from 31 micrometers to 25 micrometers doubled the e- APD gain from 470 for an array produced in the year 2010 to a gain of 1100 on an array delivered to NASA GSFC recently. The mean single-photon SNR was over 12 and the excess noise factors measurements were 1.2-1.3. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output.

Study on avalanche photodiode influence on heterodyne laser interferometer linearity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Budzyn, Grzegorz, E-mail: grzegorz.budzyn@pwr.wroc.pl; Podzorny, Tomasz

2016-06-28

In the paper we analyze factors reducing the possible accuracy of the heterodyne laser interferometers. The analysis is performed for the avalanche-photodiode input stages but is in main points valid also for stages with other type of photodetectors. Instrumental error originating from optical, electronic and digital signal processing factors is taken into consideration. We stress factors which are critical and those which can be neglected at certain accuracy requirements. In the work we prove that it is possible to reduce errors of the laser instrument below 1 nm point for multiaxial APD based interferometers by precise control of incident optical powermore » and the temperature of the photodiode.« less

Reliability assessment of multiple quantum well avalanche photodiodes

NASA Technical Reports Server (NTRS)

Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

1995-01-01

The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

The 1.06 micrometer avalanche photodiode detectors with integrated circuit preamplifiers

NASA Technical Reports Server (NTRS)

Eden, R. C.

1975-01-01

The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short-pulse detection, is reported. This work entailed both the development of a new type of heterojunction 3-5 semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low-noise preamp design making use of GaAs Schottky barrier-gate field effect transistors.

Dark Current Degradation of Near Infrared Avalanche Photodiodes from Proton Irradiation

NASA Technical Reports Server (NTRS)

Becker, Heidi N.; Johnston, Allan H.

2004-01-01

InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.

Type-II Superlattice Avalanche Photodiodes

NASA Astrophysics Data System (ADS)

Huang, Jun

Type-II superlattice avalanche photodiodes have shown advantages compared to conventional mercury cadmium telluride photodiodes for infrared wavelength detection. However, surface or interface leakage current has been a major issue for superlattice avalanche photodiodes, especially in infrared wavelength region. First, passivation of the superlattice device with ammonium sulfide and thioacetamide was carried out, and its surface quality was studied by X-ray Photoelectron Spectroscopy. The study showed that both ammonium sulfide and thiacetamide passivation can actively remove the native oxide at the surface. Thiacetamide passivation combine more sulfur bonds with III-V elements than that of ammonium sulfide. Another X-ray photoelectron spectra of thiacetamide-treated atomic layer deposited zinc sulfide capped InAs/GaSb superlattice was performed to investigate the interface sulfur bond conditions. Sb--S and As--S bonds disappear while In-S bond gets enhanced, indicating that Indium Sulfide should be the major components at the interface after ZnS deposition. Second, the simulation of electrical characteristics for zinc sulfide, silicon nitride and silicon dioxide passivated superlattice devices was performed by SILVACO software to fit the experimental results and to discover the surface current mechanism. Different surface current mechanism strengths were found. Third, several novel dual-carrier avalanche photodiode structures were designed and simulated. The structures had alternate carrier multiplication regions, placed next to a wider electron multiplication region, creating dual-carrier multiplication feedback systems. Gain and excess noise factor of these structures were simulated and compared based on the dead space multiplication theory under uniform electric field. From the simulation, the applied bias can be greatly lowered or the thickness can be shrunk to achieve the same gain from the conventional device. The width of the thin region was the most critical parameter determining the device performance.

Comparison of 32 x 128 and 32 x 32 Geiger-mode APD FPAs for single photon 3D LADAR imaging

NASA Astrophysics Data System (ADS)

Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph

2011-05-01

We present results obtained from 3D imaging focal plane arrays (FPAs) employing planar-geometry InGaAsP/InP Geiger-mode avalanche photodiodes (GmAPDs) with high-efficiency single photon sensitivity at 1.06 μm. We report results obtained for new 32 x 128 format FPAs with 50 μm pitch and compare these results to those obtained for 32 x 32 format FPAs with 100 μm pitch. We show excellent pixel-level yield-including 100% pixel operability-for both formats. The dark count rate (DCR) and photon detection efficiency (PDE) performance is found to be similar for both types of arrays, including the fundamental DCR vs. PDE tradeoff. The optical crosstalk due to photon emission induced by pixel-level avalanche detection events is found to be qualitatively similar for both formats, with some crosstalk metrics for the 32 x 128 format found to be moderately elevated relative to the 32 x 32 FPA results. Timing jitter measurements are also reported for the 32 x 128 FPAs.

Linear terrestrial laser scanning using array avalanche photodiodes as detectors for rapid three-dimensional imaging.

PubMed

Cai, Yinqiao; Tong, Xiaohua; Tong, Peng; Bu, Hongyi; Shu, Rong

2010-12-01

As an active remote sensor technology, the terrestrial laser scanner is widely used for direct generation of a three-dimensional (3D) image of an object in the fields of geodesy, surveying, and photogrammetry. In this article, a new laser scanner using array avalanche photodiodes, as designed by the Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, is introduced for rapid collection of 3D data. The system structure of the new laser scanner is first presented, and a mathematical model is further derived to transform the original data to the 3D coordinates of the object in a user-defined coordinate system. The performance of the new laser scanner is tested through a comprehensive experiment. The result shows that the new laser scanner can scan a scene with a field view of 30° × 30° in 0.2 s and that, with respect to the point clouds obtained on the wall and ground floor surfaces, the root mean square errors for fitting the two planes are 0.21 and 0.01 cm, respectively. The primary advantages of the developed laser scanner include: (i) with a line scanning mode, the new scanner achieves simultaneously the 3D coordinates of 24 points per single laser pulse, which enables it to scan faster than traditional scanners with a point scanning mode and (ii) the new scanner makes use of two galvanometric mirrors to deflect the laser beam in both the horizontal and the vertical directions. This capability makes the instrument smaller and lighter, which is more acceptable for users.

Breakdown flash at telecom wavelengths in InGaAs avalanche photodiodes

NASA Astrophysics Data System (ADS)

Shi, Yicheng; Lim, Janet Zheng Jie; Poh, Hou Shun; Tan, Peng Kian; Tan, Peiyu Amelia; Ling, Alexander; Kurtsiefer, Christian

2017-11-01

Quantum key distribution (QKD) at telecom wavelengths (1260-1625nm) has the potential for fast deployment due to existing optical fibre infrastructure and mature telecom technologies. At these wavelengths, indium gallium arsenide (InGaAs) avalanche photodiode (APD) based detectors are the preferred choice for photon detection. Similar to their silicon counterparts used at shorter wavelengths, they exhibit fluorescence from recombination of electron-hole pairs generated in the avalanche breakdown process. This fluorescence may open side channels for attacks on QKD systems. Here, we characterize the breakdown fluorescence from two commercial InGaAs single photon counting modules, and find a spectral distribution between 1000nm and 1600nm. We also show that by spectral filtering, this side channel can be efficiently suppressed.

Breakdown flash at telecom wavelengths in InGaAs avalanche photodiodes.

PubMed

Shi, Yicheng; Lim, Janet Zheng Jie; Poh, Hou Shun; Tan, Peng Kian; Tan, Peiyu Amelia; Ling, Alexander; Kurtsiefer, Christian

2017-11-27

Quantum key distribution (QKD) at telecom wavelengths (1260 - 1625 nm) has the potential for fast deployment due to existing optical fibre infrastructure and mature telecom technologies. At these wavelengths, Indium Gallium Arsenide (InGaAs) avalanche photodiode (APD) based detectors are the preferred choice for photon detection. Similar to their Silicon counterparts used at shorter wavelengths, they exhibit fluorescence from recombination of electron-hole pairs generated in the avalanche breakdown process. This fluorescence may open side channels for attacks on QKD systems. Here, we characterize the breakdown fluorescence from two commercial InGaAs single photon counting modules, and find a spectral distribution between 1000 nm and 1600 nm. We also show that by spectral filtering, this side channel can be efficiently suppressed.

Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

NASA Technical Reports Server (NTRS)

Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

2014-01-01

The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

Detectors for optical communications: A review

NASA Technical Reports Server (NTRS)

Katz, J.

1983-01-01

Detectors for optical communications in the visible and near infrared regions of the spectrum are reviewed. The three generic types of detectors described are: photomultipliers, photodiodes and avalanche photodiodes. Most of the information is applicable to other optical communications systems.

Effective amplifier noise for an optical receiver based on linear mode avalanche photodiodes

NASA Technical Reports Server (NTRS)

Chen, C.-C.

1989-01-01

The rms noise charge induced by the amplifier for an optical receiver based on the linear-mode avalanche photodiode (APD) was analyzed. It is shown that for an amplifier with a 1-pF capacitor and a noise temperature of 100 K, the rms noise charge due to the amplifier is about 300. Since the noise charge must be small compared to the signal gain, APD gains on the order of 1000 will be required to operate the receiver in the linear mode.

Spectral dependence of the main parameters of ITE silicon avalanche photodiodes

NASA Astrophysics Data System (ADS)

Wegrzecka, Iwona; Grynglas, Maria; Wegrzecki, Maciej

2001-08-01

New applications for avalanche photodiodes (APDs) as in systems using visible radiation, have prompted the need for the evaluation of detection properties of ITE APDs in the 400 divided by 700 nm spectral range. The paper presents the method and result of studies on the spectral dependence of the gain, dark and noise currents, sensitivity and excess noise factor of ITE APDs. The studies have shown that ITE APDs optimized for the near IR radiation can be effectively applied in the detection of radiation above the 500 nm wavelength.

A 1.06 micrometer avalanche photodiode receiver

NASA Technical Reports Server (NTRS)

Eden, R. C.

1975-01-01

The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.

Detection technique of targets for missile defense system

NASA Astrophysics Data System (ADS)

Guo, Hua-ling; Deng, Jia-hao; Cai, Ke-rong

2009-11-01

Ballistic missile defense system (BMDS) is a weapon system for intercepting enemy ballistic missiles. It includes ballistic-missile warning system, target discrimination system, anti-ballistic-missile guidance systems, and command-control communication system. Infrared imaging detection and laser imaging detection are widely used in BMDS for surveillance, target detection, target tracking, and target discrimination. Based on a comprehensive review of the application of target-detection techniques in the missile defense system, including infrared focal plane arrays (IRFPA), ground-based radar detection technology, 3-dimensional imaging laser radar with a photon counting avalanche photodiode (APD) arrays and microchip laser, this paper focuses on the infrared and laser imaging detection techniques in missile defense system, as well as the trends for their future development.

Performance of InGaAs short wave infrared avalanche photodetector for low flux imaging

NASA Astrophysics Data System (ADS)

Singh, Anand; Pal, Ravinder

2017-11-01

Opto-electronic performance of the InGaAs/i-InGaAs/InP short wavelength infrared focal plane array suitable for high resolution imaging under low flux conditions and ranging is presented. More than 85% quantum efficiency is achieved in the optimized detector structure. Isotropic nature of the wet etching process poses a challenge in maintaining the required control in the small pitch high density detector array. Etching process is developed to achieve low dark current density of 1 nA/cm2 in the detector array with 25 µm pitch at 298 K. Noise equivalent photon performance less than one is achievable showing single photon detection capability. The reported photodiode with low photon flux is suitable for active cum passive imaging, optical information processing and quantum computing applications.

A dispersed fringe sensor prototype for the Giant Magellan Telescope

NASA Astrophysics Data System (ADS)

Frostig, Danielle; McLeod, Brian A.; Kopon, Derek

2017-01-01

The Giant Magellan Telescope (GMT) will employ seven 8.4m primary mirror segments and seven 1m secondary mirror segments to achieve the diffraction limit of a 25.4m aperture. One challenge of the GMT is keeping the seven pairs of mirror segments in phase. We present a conceptual opto mechanical design for a prototype dispersed fringe sensor. The prototype, which operates at J-band and incorporates an infrared avalanche photodiode array, will be deployed on the Magellan Clay Telescope to verify the sensitivity and accuracy of the planned GMT phasing sensor.

Infrared Detector Activities at NASA Langley Research Center

NASA Technical Reports Server (NTRS)

Abedin, M. N.; Refaat, T. F.; Sulima, O. V.; Amzajerdian, F.

2008-01-01

Infrared detector development and characterization at NASA Langley Research Center will be reviewed. These detectors were intended for ground, airborne, and space borne remote sensing applications. Discussion will be focused on recently developed single-element infrared detector and future development of near-infrared focal plane arrays (FPA). The FPA will be applied to next generation space-based instruments. These activities are based on phototransistor and avalanche photodiode technologies, which offer high internal gain and relatively low noise-equivalent-power. These novel devices will improve the sensitivity of active remote sensing instruments while eliminating the need for a high power laser transmitter.

Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

NASA Technical Reports Server (NTRS)

Menkara, H. M.; Wagner, B. K.; Summers, C. J.

1995-01-01

A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

Best-Practice Criteria for Practical Security of Self-Differencing Avalanche Photodiode Detectors in Quantum Key Distribution

NASA Astrophysics Data System (ADS)

Koehler-Sidki, A.; Dynes, J. F.; Lucamarini, M.; Roberts, G. L.; Sharpe, A. W.; Yuan, Z. L.; Shields, A. J.

2018-04-01

Fast-gated avalanche photodiodes (APDs) are the most commonly used single photon detectors for high-bit-rate quantum key distribution (QKD). Their robustness against external attacks is crucial to the overall security of a QKD system, or even an entire QKD network. We investigate the behavior of a gigahertz-gated, self-differencing (In,Ga)As APD under strong illumination, a tactic Eve often uses to bring detectors under her control. Our experiment and modeling reveal that the negative feedback by the photocurrent safeguards the detector from being blinded through reducing its avalanche probability and/or strengthening the capacitive response. Based on this finding, we propose a set of best-practice criteria for designing and operating fast-gated APD detectors to ensure their practical security in QKD.

Single photon detection using Geiger mode CMOS avalanche photodiodes

NASA Astrophysics Data System (ADS)

Lawrence, William G.; Stapels, Christopher; Augustine, Frank L.; Christian, James F.

2005-10-01

Geiger mode Avalanche Photodiodes fabricated using complementary metal-oxide-semiconductor (CMOS) fabrication technology combine high sensitivity detectors with pixel-level auxiliary circuitry. Radiation Monitoring Devices has successfully implemented CMOS manufacturing techniques to develop prototype detectors with active diameters ranging from 5 to 60 microns and measured detection efficiencies of up to 60%. CMOS active quenching circuits are included in the pixel layout. The actively quenched pixels have a quenching time less than 30 ns and a maximum count rate greater than 10 MHz. The actively quenched Geiger mode avalanche photodiode (GPD) has linear response at room temperature over six orders of magnitude. When operating in Geiger mode, these GPDs act as single photon-counting detectors that produce a digital output pulse for each photon with no associated read noise. Thermoelectrically cooled detectors have less than 1 Hz dark counts. The detection efficiency, dark count rate, and after-pulsing of two different pixel designs are measured and demonstrate the differences in the device operation. Additional applications for these devices include nuclear imaging and replacement of photomultiplier tubes in dosimeters.

Performance of a junction termination extension avalanche photodiode for use with scintillators

NASA Astrophysics Data System (ADS)

Gramsch, E.; Pcheliakov, O.; Chistokhin, Igor B.

2008-11-01

An avalanche photodiode with a ring structure called junction termination extension (JTE) was built and tested. It has three diffused rings around the main junction to avoid early breakdown at the surface. The ITE rings have less doping than the main junction and can be built by well controlled single ion-implantation through a single mask. Avalanche photodiodes with two mm diameter active area have been have been built by implantation of boron with a dose of 2, 3, 4 and 5 × 1012 cm-2, followed by deep diffusion of the junction up to 14 μm. The dark current is strongly dependent on the implantation dose, decreasing with decreasing charge. For the APDs with implanted dose of 5 × 1012 cm-2 a gain of 8 is obtained at 1120 V. The energy resolution from a 137Cs source was measured to be 24.4% FWHM with a 2 × 2 × 2 mm3 BGO scintillator. We have also performed simulations of the gain and breakdown voltage that correlate well with the results.

A Study of Photoreceivers for Free-Space, Analog, Intensity-Modulated, Direct-Detection Optical Links Operating at Microwave Frequencies

DTIC Science & Technology

2010-09-10

photodiode with internal resistor followed by a high-gain RF amplifier , and c) a p-i-n photodiode followed by a transimpedance amplifier (TIA). We...gain, RF electrical amplifier ; and 3) a p-i-n photodiode followed by a transimpedance amplifier . Finally, we perform calculations to predict the...common photoreceiver is a p-i-n or avalanche photodiode with a built-in transimpedance amplifier (TIA) and often incorporating automatic gain control

X-ray spectroscopy with silicon pin and avalanche photo diodes

NASA Technical Reports Server (NTRS)

Desai, U. D.

1992-01-01

Results of an evaluation of silicon P-Intrinsic-N (PIN) photodiodes and Avalanche Photodiodes (APD) for the direct detection of soft x rays from 1 to 20 keV and for the detection of scintillation light output from CsI(TI) for higher x ray energies (30 to 1000 keV) are presented. About one keV resolution was achieved at room temperature for both the PIN and APD detectors for soft x rays (1 to 20 keV). Commercially available, low power (18 mV), low noise, hybrid preamplifiers, were used. These photodiodes were also coupled to CsI(TI) scintillator and obtained about 6 resolution at 662 keV. The photodiode frequency response matches well with the emission spectrum of the CsI(TI) scintillator providing good spectral resolution and a higher signal than NaI(TI) when viewed by conventional photomultipliers. A PIN-CsI(TI) combination provides a low energy threshold of around 60 keV while for the APD-CsI(TI) it is 15 keV.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diepold, Marc, E-mail: marc.diepold@mpq.mpg.de; Franke, Beatrice; Götzfried, Johannes

Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work, we report on a fitting technique used to account for different detector responses resulting from photoabsorption in the various avalanche photodiode layers. The use of this technique results in an improvement of the energy resolution at 8.2 keV by up to a factor of 2 and corrects the timing information by up to 25 ns to account for space dependent electron drift time. In addition, this waveform analysis is used for particle identification, e.g., to distinguish between x-rays and MeV electrons in our experiment.

Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

PubMed Central

Farrell, Alan C.; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M.; Huffaker, Diana L.

2015-01-01

Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III–V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure. PMID:26627932

Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic-Inorganic Hybrid Structure

NASA Astrophysics Data System (ADS)

Abe, Tomoki; Uchida, Shigeto; Tanaka, Keita; Fujisawa, Takanobu; Kasada, Hirofumi; Ando, Koshi; Akaiwa, Kazuaki; Ichino, Kunio

2018-05-01

We investigated device degradation in PEDOT:PSS/ZnSSe organic-inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). ZnSSe/n-GaAs wafers were grown by molecular beam epitaxy, and PEDOT:PSS window layers were formed by inkjet technique. We observed rapid degradation with APD-mode stress (˜ 30 V) in the N2 (4 N) atmosphere, while we observed no marked change in forward bias current stress and photocurrent stress. In the case of a vacuum condition, we observed no detectable degradation in the dark avalanche current with APD-mode stress. Therefore, the degradation in the PEDOT:PSS/ZnSSe interface under the APD-mode stress was caused by the residual water vapor or oxygen in the N2 atmosphere and could be controlled by vacuum packaging.

Hybrid photodetector for single-molecule spectroscopy and microscopy

PubMed Central

Michalet, X.; Cheng, Adrian; Antelman, Joshua; Suyama, Motohiro; Arisaka, Katsushi; Weiss, Shimon

2011-01-01

We report benchmark tests of a new single-photon counting detector based on a GaAsP photocathode and an electron-bombarded avalanche photodiode developed by Hamamatsu Photonics. We compare its performance with those of standard Geiger-mode avalanche photodiodes. We show its advantages for FCS due to the absence of after-pulsing and for fluorescence lifetime measurements due to its excellent time resolution. Its large sensitive area also greatly simplifies setup alignment. Its spectral sensitivity being similar to that of recently introduced CMOS SPADs, this new detector could become a valuable tool for single-molecule fluorescence measurements, as well as for many other applications. PMID:21822361

Evaluation of a fast single-photon avalanche photodiode for measurement of early transmitted photons through diffusive media.

PubMed

Mu, Ying; Valim, Niksa; Niedre, Mark

2013-06-15

We tested the performance of a fast single-photon avalanche photodiode (SPAD) in measurement of early transmitted photons through diffusive media. In combination with a femtosecond titanium:sapphire laser, the overall instrument temporal response time was 59 ps. Using two experimental models, we showed that the SPAD allowed measurement of photon-density sensitivity functions that were approximately 65% narrower than the ungated continuous wave case at very early times. This exceeds the performance that we have previously achieved with photomultiplier-tube-based systems and approaches the theoretical maximum predicted by time-resolved Monte Carlo simulations.

Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode

NASA Technical Reports Server (NTRS)

Laird, Jamie S.; Onoda, Shinobu; Hirao, Toshio; Becker, Heidi; Johnston, Allan; Laird, Jamie S.; Itoh, Hisayoshi

2006-01-01

Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.

Six orders of magnitude dynamic range in capillary electrophoresis with ultrasensitive laser-induced fluorescence detection

PubMed Central

Whitmore, Colin D.; Essaka, David; Dovichi, Norman J.

2009-01-01

An ultrasensitive laser-induced fluorescence detector was used with capillary electrophoresis for the study of 5-carboxy-tetramethylrhodamine. The raw signal from the detector provided roughly three orders of magnitude dynamic range. The signal saturated at high analyte concentrations due to the dead time associated with the single-photon counting avalanche photodiode employed in the detector. The signal can be corrected for the detector dead time, providing an additional order of magnitude dynamic range. To further increase dynamic range, two fiber-optic beam-splitters were cascaded to generate a primary signal and two attenuated signals, each monitored by a single-photon counting avalanche photodiode. The combined signals from the three photodiodes are reasonably linear from the concentration detection limit of 3 pM to 10 μM, the maximum concentration investigated, a range of 3,000,000. Mass detection limits were 150 yoctomoles injected onto the capillary. PMID:19836546

HgCdTe Avalanche Photodiode Detectors for Airborne and Spaceborne Lidar at Infrared Wavelengths

NASA Technical Reports Server (NTRS)

Sun, Xiaoli; Abshire, James B.; Beck, Jeffrey D.; Mitra, Pradip; Reiff, Kirk; Yang, Guangning

2017-01-01

We report results from characterizing the HgCdTe avalanche photodiode (APD) sensorchip assemblies (SCA) developed for lidar at infrared wavelength using the high density vertically integrated photodiodes (HDVIP) technique. These devices demonstrated high quantum efficiency, typically greater than 90 between 0.8 micrometers and the cut-off wavelength, greater than 600 APD gain, near unity excess noise factor, 6-10 MHz electrical bandwidth and less than 0.5 fW/Hz(exp.1/2) noise equivalent power (NEP). The detectors provide linear analog output with a dynamic range of 2-3 orders of magnitude at a fixed APD gain without averaging, and over 5 orders of magnitude by adjusting the APD and preamplifier gain settings. They have been successfully used in airborne CO2 and CH4 integrated path differential absorption (IPDA) lidar as a precursor for space lidar applications.

Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes

NASA Astrophysics Data System (ADS)

Collins, X.; Craig, A. P.; Roblin, T.; Marshall, A. R. J.

2018-01-01

We report the impact ionisation coefficients of the quaternary alloy Al0.9Ga0.1As0.08Sb0.92 lattice matched to GaSb substrates within the field range of 150 to 550 kV cm-1 using p-i-n and n-i-p diodes of various intrinsic thicknesses. The coefficients were found with an evolutionary fitting algorithm using a non-local recurrence based multiplication model and a variable electric field profile. These coefficients indicate that an avalanche photodiode not only can be designed to be a function in the mid-wave infrared but also can be operated at lower voltages. This is due to the high magnitude of the impact ionisation coefficients at relatively low fields compared to other III-V materials typically used in avalanche multiplication regions.

Practical photon number detection with electric field-modulated silicon avalanche photodiodes.

PubMed

Thomas, O; Yuan, Z L; Shields, A J

2012-01-24

Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes

NASA Astrophysics Data System (ADS)

Cao, Siyu; Zhao, Yue; ur Rehman, Sajid; Feng, Shuai; Zuo, Yuhua; Li, Chuanbo; Zhang, Lichun; Cheng, Buwen; Wang, Qiming

2018-05-01

In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and a theoretical model of APDs is built. Through theoretical analysis and two-dimensional (2D) simulation, the influence of charge layer and tunneling effect on the APDs is fully understood. The design of charge layer (including doping level and thickness) can be calculated by our predictive model for different multiplication thickness. We find that as the thickness of charge layer increases, the suitable doping level range in charge layer decreases. Compared to thinner charge layer, performance of APD varies significantly via several percent deviations of doping concentrations in thicker charge layer. Moreover, the generation rate ( G btt ) of band-to-band tunnel is calculated, and the influence of tunneling effect on avalanche field was analyzed. We confirm that avalanche field and multiplication factor ( M n ) in multiplication will decrease by the tunneling effect. The theoretical model and analysis are based on InGaAs/InAlAs APD; however, they are applicable to other APD material systems as well.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kishimoto, S., E-mail: syunji.kishimoto@kek.jp; Haruki, R.; Mitsui, T.

We developed a silicon avalanche photodiode (Si-APD) linear-array detector to be used for time-resolved X-ray scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm{sup 2}) with a pixel pitch of 150 μm and a depletion depth of 10 μm. The multichannel scaler counted X-ray pulses over continuous 2046 time bins for every 0.5 ns and recorded a time spectrum at each pixel with a time resolution of 0.5 ns (FWHM) for 8.0 keV X-rays. Using the detector system, we were able to observe X-ray peaks clearly separated with 2 nsmore » interval in the multibunch-mode operation of the Photon Factory ring. The small-angle X-ray scattering for polyvinylidene fluoride film was also observed with the detector.« less

Origin of large dark current increase in InGaAs/InP avalanche photodiode

NASA Astrophysics Data System (ADS)

Wen, J.; Wang, W. J.; Chen, X. R.; Li, N.; Chen, X. S.; Lu, W.

2018-04-01

The large dark current increase near the breakdown voltage of an InGaAs/InP avalanche photodiode is observed and analyzed from the aspect of bulk defects in the device materials. The trap level information is extracted from the temperature-dependent electrical characteristics of the device and the low temperature photoluminescence spectrum of the materials. Simulation results with the extracted trap level taken into consideration show that the trap is in the InP multiplication layer and the trap assisted tunneling current induced by the trap is the main cause of the large dark current increase with the bias from the punch-through voltage to 95% breakdown voltage.

Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping

NASA Astrophysics Data System (ADS)

Bayram, C.; Pau, J. L.; McClintock, R.; Razeghi, M.

2008-06-01

High quality δ-doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with δ-doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with δ-doped p-GaN also achieve a maximum multiplication gain of 5.1×104, more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with δ-doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via δ-doping.

Response of CMS avalanche photo-diodes to low energy neutrons

NASA Astrophysics Data System (ADS)

Brown, R. M.; Deiters, K.; Ingram, Q.; Renker, D.

2012-12-01

The response of the Avalanche Photo-diodes (APDs) installed in the CMS detector at the LHC to neutrons from 241AmBe and 252Cf sources is reported. Signals in size equivalent to those of up to 106 photo-electrons with the nominal APD gain are observed. Measurements with an APD with the protective epoxy coating removed and with the source placed behind the APD show that there is an important response due to recoil protons from neutron interactions with the hydrogen in the epoxy, in addition to signals from neutron interactions with the silicon of the diode. The effective gain of these signals is much smaller than the diode's nominal gain.

Interplanetary Space Weather Effects on Lunar Reconnaissance Orbiter Avalanche Photodiode Performance

NASA Technical Reports Server (NTRS)

Clements, E. B.; Carlton, A. K.; Joyce, C. J.; Schwadron, N. A.; Spence, H. E.; Sun, X.; Cahoy, K.

2016-01-01

Space weather is a major concern for radiation-sensitive space systems, particularly for interplanetary missions, which operate outside of the protection of Earth's magnetic field. We examine and quantify the effects of space weather on silicon avalanche photodiodes (SiAPDs), which are used for interplanetary laser altimeters and communications systems and can be sensitive to even low levels of radiation (less than 50 cGy). While ground-based radiation testing has been performed on avalanche photodiode (APDs) for space missions, in-space measurements of SiAPD response to interplanetary space weather have not been previously reported. We compare noise data from the Lunar Reconnaissance Orbiter (LRO) Lunar Orbiter Laser Altimeter (LOLA) SiAPDs with radiation measurements from the onboard Cosmic Ray Telescope for the Effects of Radiation (CRaTER) instrument. We did not find any evidence to support radiation as the cause of changes in detector threshold voltage during radiation storms, both for transient detector noise and long-term average detector noise, suggesting that the approximately 1.3 cm thick shielding (a combination of titanium and beryllium) of the LOLA detectors is sufficient for SiAPDs on interplanetary missions with radiation environments similar to what the LRO experienced (559 cGy of radiation over 4 years).

Development of an integrated four-channel fast avalanche-photodiode detector system with nanosecond time resolution

NASA Astrophysics Data System (ADS)

Li, Zhenjie; Li, Qiuju; Chang, Jinfan; Ma, Yichao; Liu, Peng; Wang, Zheng; Hu, Michael Y.; Zhao, Jiyong; Alp, E. E.; Xu, Wei; Tao, Ye; Wu, Chaoqun; Zhou, Yangfan

2017-10-01

A four-channel nanosecond time-resolved avalanche-photodiode (APD) detector system is developed at Beijing Synchrotron Radiation. It uses a single module for signal processing and readout. This integrated system provides better reliability and flexibility for custom improvement. The detector system consists of three parts: (i) four APD sensors, (ii) four fast preamplifiers and (iii) a time-digital-converter (TDC) readout electronics. The C30703FH silicon APD chips fabricated by Excelitas are used as the sensors of the detectors. It has an effective light-sensitive area of 10 × 10 mm2 and an absorption layer thickness of 110 μm. A fast preamplifier with a gain of 59 dB and bandwidth of 2 GHz is designed to readout of the weak signal from the C30703FH APD. The TDC is realized by a Spartan-6 field-programmable-gate-array (FPGA) with multiphase method in a resolution of 1ns. The arrival time of all scattering events between two start triggers can be recorded by the TDC. The detector has been used for nuclear resonant scattering study at both Advanced Photon Source and also at Beijing Synchrotron Radiation Facility. For the X-ray energy of 14.4 keV, the time resolution, the full width of half maximum (FWHM) of the detector (APD sensor + fast amplifier) is 0.86 ns, and the whole detector system (APD sensors + fast amplifiers + TDC readout electronics) achieves a time resolution of 1.4 ns.

Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range

NASA Astrophysics Data System (ADS)

Hahn, L.; Fuchs, F.; Kirste, L.; Driad, R.; Rutz, F.; Passow, T.; Köhler, K.; Rehm, R.; Ambacher, O.

2018-04-01

AlxGa1-xN based avalanche photodiodes grown on sapphire substrate with Al-contents of x = 0.65 and x = 0.60 have been examined under back- and frontside illumination with respect to their avalanche gain properties. The photodetectors suitable for the solar-blind ultraviolet spectral regime show avalanche gain for voltages in excess of 30 V reverse bias in the linear gain mode. Devices with a mesa diameter of 100 μm exhibit stable avalanche gain below the break through threshold voltage, exceeding a multiplication gain of 5500 at 84 V reverse bias. A dark current below 1 pA can be found for reverse voltages up to 60 V.

NASA Tech Briefs, March 2008

NASA Technical Reports Server (NTRS)

2008-01-01

Topics covered include: WRATS Integrated Data Acquisition System; Breadboard Signal Processor for Arraying DSN Antennas; Digital Receiver Phase Meter; Split-Block Waveguide Polarization Twist for 220 to 325 GHz; Nano-Multiplication-Region Avalanche Photodiodes and Arrays; Tailored Asymmetry for Enhanced Coupling to WGM Resonators; Disabling CNT Electronic Devices by Use of Electron Beams; Conical Bearingless Motor/Generators; Integrated Force Method for Indeterminate Structures; Carbon-Nanotube-Based Electrodes for Biomedical Applications; Compact Directional Microwave Antenna for Localized Heating; Using Hyperspectral Imagery to Identify Turfgrass Stresses; Shaping Diffraction-Grating Grooves to Optimize Efficiency; Low-Light-Shift Cesium Fountain without Mechanical Shutters; Magnetic Compensation for Second-Order Doppler Shift in LITS; Nanostructures Exploit Hybrid-Polariton Resonances; Microfluidics, Chromatography, and Atomic-Force Microscopy; Model of Image Artifacts from Dust Particles; Pattern-Recognition System for Approaching a Known Target; Orchestrator Telemetry Processing Pipeline; Scheme for Quantum Computing Immune to Decoherence; Spin-Stabilized Microsatellites with Solar Concentrators; Phase Calibration of Antenna Arrays Aimed at Spacecraft; Ring Bus Architecture for a Solid-State Recorder; and Image Compression Algorithm Altered to Improve Stereo Ranging.

Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.

PubMed

Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

2017-07-10

We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.

Measurement of nuclear resonant scattering on 61Ni with fast scintillation detector using proportional-mode silicon avalanche photodiode

NASA Astrophysics Data System (ADS)

Inoue, Keisuke; Kobayashi, Yasuhiro; Yoda, Yoshitaka; Koshimizu, Masanori; Nishikido, Fumihiko; Haruki, Rie; Kishimoto, Shunji

2018-02-01

We developed a new scintillation timing detector using a proportional-mode silicon avalanche photodiode (Si-APD) for synchrotron radiation nuclear resonant scattering. We report on the nuclear forward scattering measurement on 61Ni with a prototype detector using a lead-loaded plastic scintillator (EJ-256, 3 mm in diameter and 2 mm in thickness), mounted on a proportional-mode Si-APD. Using synchrotron X-rays of 67.41 keV, we successfully measured the time spectra of nuclear forward scattering on 61Ni enriched metal foil and 61Ni86V14 alloy. The prototype detector confirmed the expected dynamical beat structure with a time resolution of 0.53 ns (FWHM).

Equivalent circuit model of Ge/Si separate absorption charge multiplication avalanche photodiode

NASA Astrophysics Data System (ADS)

Wang, Wei; Chen, Ting; Yan, Linshu; Bao, Xiaoyuan; Xu, Yuanyuan; Wang, Guang; Wang, Guanyu; Yuan, Jun; Li, Junfeng

2018-03-01

The equivalent circuit model of Ge/Si Separate Absorption Charge Multiplication Avalanche Photodiode (SACM-APD) is proposed. Starting from the carrier rate equations in different regions of device and considering the influences of non-uniform electric field, noise, parasitic effect and some other factors, the equivalent circuit model of SACM-APD device is established, in which the steady-state and transient current voltage characteristics can be described exactly. In addition, the proposed Ge/Si SACM APD equivalent circuit model is embedded in PSpice simulator. The important characteristics of Ge/Si SACM APD such as dark current, frequency response, shot noise are simulated, the simulation results show that the simulation with the proposed model are in good agreement with the experimental results.

Advanced MCT technologies at LETI for space applications

NASA Astrophysics Data System (ADS)

Durand, A.; Destefanis, G.; Gravrand, O.; Rothmann, J.

This document is a recap of an oral presentation made at Nice during the INSU Astrophysics Detector Workshop 2008. It aims at giving an overview of the achievements and ongoing developments presently carried out at CEA-LETI in the field of Infrared focal plane array. Although most of the research actually performed at LETI is not driven by space oriented application, the excellence and the cutting edge of the outcome is or can be applied to space-dedicated components. This paper focus on features and developments from which astrophysics observation would benefit in the near future on the European market. This encompassed “traditionnal” developments such as format enlargement, low dark current technology such as p/n structure but it also shade light on promising and thrilling development such as avalanche photodiode array. It eventually gives some hints of none MCT technologies processed at LETI.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kishimoto, S., E-mail: syunji.kishimoto@kek.jp; Haruki, R.; Mitsui, T.

We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm{sup 2}) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10{sup 7} cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrummore » of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on {sup 57}Fe.« less

Development of novel technologies to enhance performance and reliability of III-Nitride avalanche photodiodes

NASA Astrophysics Data System (ADS)

Suvarna, Puneet Harischandra

Solar-blind ultraviolet avalanche photodiodes are an enabling technology for applications in the fields of astronomy, communication, missile warning systems, biological agent detection and particle physics research. Avalanche photodiodes (APDs) are capable of detecting low-intensity light with high quantum efficiency and signal-to-noise ratio without the need for external amplification. The properties of III-N materials (GaN and AlGaN) are promising for UV photodetectors that are highly efficient, radiation-hard and capable of visible-blind or solar-blind operation without the need for external filters. However, the realization of reliable and high performance III-N APDs and imaging arrays has several technological challenges. The high price and lack of availability of bulk III-N substrates necessitates the growth of III-Ns on lattice mismatched substrates leading to a high density of dislocations in the material that can cause high leakage currents, noise and premature breakdown in APDs. The etched sidewalls of III-N APDs and high electric fields at contact edges are also detrimental to APD performance and reliability. In this work, novel technologies have been developed and implemented that address the issues of performance and reliability in III-Nitride based APDs. To address the issue of extended defects in the bulk of the material, a novel pulsed MOCVD process was developed for the growth of AlGaN. This process enables growth of high crystal quality AlxGa1-xN with excellent control over composition, doping and thickness. The process has also been adapted for the growth of high quality III-N materials on silicon substrate for devices such as high electron mobility transistors (HEMTs). A novel post-growth defect isolation technique is also discussed that can isolate the impact of conductive defects from devices. A new sidewall passivation technique using atomic layer deposition (ALD) of dielectric materials was developed for III-N APDs that is effective in reducing the dark-current and trap states at sidewalls by close to an order of magnitude, leading to improved APD performance. Development and implementation of an ion implantation based contact edge termination technique for III-N APDs that helps prevent premature breakdown from the contact edge of the devices, has further lead to improved reliability. Finally novel improved III-N APD device designs are proposed using preliminary experiments and numerical simulations for future implementations.

Current isolating epitaxial buffer layers for high voltage photodiode array

DOEpatents

Morse, Jeffrey D.; Cooper, Gregory A.

2002-01-01

An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

The Use of Self-scanned Silicon Photodiode Arrays for Astronomical Spectrophotometry

NASA Technical Reports Server (NTRS)

Cochran, A. L.

1984-01-01

The use of a Reticon self scanned silicon photodiode array for precision spectrophotometry is discussed. It is shown that internal errors are + or - 0.003 mag. Observations obtained with a photodiode array are compared with observations obtained with other types of detectors with agreement, from 3500 A to 10500 A, of 1%. The photometric properties of self scanned photodiode arrays are discussed. Potential pitfalls are given.

A new three-dimensional nonscanning laser imaging system based on the illumination pattern of a point-light-source array

NASA Astrophysics Data System (ADS)

Xia, Wenze; Ma, Yayun; Han, Shaokun; Wang, Yulin; Liu, Fei; Zhai, Yu

2018-06-01

One of the most important goals of research on three-dimensional nonscanning laser imaging systems is the improvement of the illumination system. In this paper, a new three-dimensional nonscanning laser imaging system based on the illumination pattern of a point-light-source array is proposed. This array is obtained using a fiber array connected to a laser array with each unit laser having independent control circuits. This system uses a point-to-point imaging process, which is realized using the exact corresponding optical relationship between the point-light-source array and a linear-mode avalanche photodiode array detector. The complete working process of this system is explained in detail, and the mathematical model of this system containing four equations is established. A simulated contrast experiment and two real contrast experiments which use the simplified setup without a laser array are performed. The final results demonstrate that unlike a conventional three-dimensional nonscanning laser imaging system, the proposed system meets all the requirements of an eligible illumination system. Finally, the imaging performance of this system is analyzed under defocusing situations, and analytical results show that the system has good defocusing robustness and can be easily adjusted in real applications.

An excess noise measurement system for weak responsivity avalanche photodiodes

NASA Astrophysics Data System (ADS)

Qiao, Liang; Dimler, Simon J.; Baharuddin, Aina N. A. P.; Green, James E.; David, John P. R.

2018-06-01

A system for measuring, with reduced photocurrent, the excess noise associated with the gain in avalanche photodiodes (APDs), using a transimpedance amplifier front-end and based on phase-sensitive detection is described. The system can reliably measure the excess noise power of devices, even when the un-multiplied photocurrent is low (~10 nA). This is more than one order of magnitude better than previously reported systems and represents a significantly better noise signal to noise ratio. This improvement in performance has been achieved by increasing the value of the feedback resistor and reducing the op-amp bandwidth. The ability to characterise APD performance with such low photocurrents enables the use of low power light sources such as light emitting diode rather than lasers to investigate the APD noise performance.

Adaptive aperture for Geiger mode avalanche photodiode flash ladar systems.

PubMed

Wang, Liang; Han, Shaokun; Xia, Wenze; Lei, Jieyu

2018-02-01

Although the Geiger-mode avalanche photodiode (GM-APD) flash ladar system offers the advantages of high sensitivity and simple construction, its detection performance is influenced not only by the incoming signal-to-noise ratio but also by the absolute number of noise photons. In this paper, we deduce a hyperbolic approximation to estimate the noise-photon number from the false-firing percentage in a GM-APD flash ladar system under dark conditions. By using this hyperbolic approximation function, we introduce a method to adapt the aperture to reduce the number of incoming background-noise photons. Finally, the simulation results show that the adaptive-aperture method decreases the false probability in all cases, increases the detection probability provided that the signal exceeds the noise, and decreases the average ranging error per frame.

Adaptive aperture for Geiger mode avalanche photodiode flash ladar systems

NASA Astrophysics Data System (ADS)

Wang, Liang; Han, Shaokun; Xia, Wenze; Lei, Jieyu

2018-02-01

Although the Geiger-mode avalanche photodiode (GM-APD) flash ladar system offers the advantages of high sensitivity and simple construction, its detection performance is influenced not only by the incoming signal-to-noise ratio but also by the absolute number of noise photons. In this paper, we deduce a hyperbolic approximation to estimate the noise-photon number from the false-firing percentage in a GM-APD flash ladar system under dark conditions. By using this hyperbolic approximation function, we introduce a method to adapt the aperture to reduce the number of incoming background-noise photons. Finally, the simulation results show that the adaptive-aperture method decreases the false probability in all cases, increases the detection probability provided that the signal exceeds the noise, and decreases the average ranging error per frame.

Infrasound array criteria for automatic detection and front velocity estimation of snow avalanches: towards a real-time early-warning system

NASA Astrophysics Data System (ADS)

Marchetti, E.; Ripepe, M.; Ulivieri, G.; Kogelnig, A.

2015-11-01

Avalanche risk management is strongly related to the ability to identify and timely report the occurrence of snow avalanches. Infrasound has been applied to avalanche research and monitoring for the last 20 years but it never turned into an operational tool to identify clear signals related to avalanches. We present here a method based on the analysis of infrasound signals recorded by a small aperture array in Ischgl (Austria), which provides a significant improvement to overcome this limit. The method is based on array-derived wave parameters, such as back azimuth and apparent velocity. The method defines threshold criteria for automatic avalanche identification by considering avalanches as a moving source of infrasound. We validate the efficiency of the automatic infrasound detection with continuous observations with Doppler radar and we show how the velocity of a snow avalanche in any given path around the array can be efficiently derived. Our results indicate that a proper infrasound array analysis allows a robust, real-time, remote detection of snow avalanches that is able to provide the number and the time of occurrence of snow avalanches occurring all around the array, which represent key information for a proper validation of avalanche forecast models and risk management in a given area.

Simultaneous acquisition of multislice PET and MR images: initial results with a MR-compatible PET scanner.

PubMed

Catana, Ciprian; Wu, Yibao; Judenhofer, Martin S; Qi, Jinyi; Pichler, Bernd J; Cherry, Simon R

2006-12-01

PET and MRI are powerful imaging techniques that are largely complementary in the information they provide. We have designed and built a MR-compatible PET scanner based on avalanche photodiode technology that allows simultaneous acquisition of PET and MR images in small animals. The PET scanner insert uses magnetic field-insensitive, position-sensitive avalanche photodiode (PSAPD) detectors coupled, via short lengths of optical fibers, to arrays of lutetium oxyorthosilicate (LSO) scintillator crystals. The optical fibers are used to minimize electromagnetic interference between the radiofrequency and gradient coils and the PET detector system. The PET detector module components and the complete PET insert assembly are described. PET data were acquired with and without MR sequences running, and detector flood histograms were compared with the ones generated from the data acquired outside the magnet. A uniform MR phantom was also imaged to assess the effect of the PET detector on the MR data acquisition. Simultaneous PET and MRI studies of a mouse were performed ex vivo. PSAPDs can be successfully used to read out large numbers of scintillator crystals coupled through optical fibers with acceptable performance in terms of energy and timing resolution and crystal identification. The PSAPD-LSO detector performs well in the 7-T magnet, and no visible artifacts are detected in the MR images using standard pulse sequences. The first images from the complete system have been successfully acquired and reconstructed, demonstrating that simultaneous PET and MRI studies are feasible and opening up interesting possibilities for dual-modality molecular imaging studies.

Thomson Scattering Diagnostic Data Acquisition Systems for Modern Fusion Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanenko, S.V.; Khilchenko, A.D.; Ovchar, V.K.

2015-07-01

Uniquely designed complex data acquisition system for Thomson scattering diagnostic was developed. It allows recording short duration (3-5 ns) scattered pulses with 2 GHz sampling rate and 10-bit total resolution in oscilloscope mode. The system consists up to 48 photo detector modules with 0- 200 MHz bandwidth, 1-48 simultaneously sampling ADC modules and synchronization subsystem. The photo detector modules are based on avalanche photodiodes (APD) and ultra-low noise trans-impedance amplifiers. ADC modules include fast analog to digital converters and digital units based on the FPGA (Field- Programmable Gate Array) for data processing and storage. The synchronization subsystem is used tomore » form triggering pulses and to organize the simultaneously mode of ADC modules operation. (authors)« less

CMOS integrated avalanche photodiodes and frequency-mixing optical sensor front end for portable NIR spectroscopy instruments.

PubMed

Yun, Ruida; Sthalekar, Chirag; Joyner, Valencia M

2011-01-01

This paper presents the design and measurement results of two avalanche photodiode structures (APDs) and a novel frequency-mixing transimpedance amplifier (TIA), which are key building blocks towards a monolithically integrated optical sensor front end for near-infrared (NIR) spectroscopy applications. Two different APD structures are fabricated in an unmodified 0.18 \\im CMOS process, one with a shallow trench isolation (STI) guard ring and the other with a P-well guard ring. The APDs are characterized in linear mode. The STI bounded APD demonstrates better performance and exhibits 3.78 A/W responsivity at a wavelength of 690 nm and bias voltage of 10.55 V. The frequency-mixing TIA (FM-TIA) employs a T-feedback network incorporating gate-controlled transistors for resistance modulation, enabling the simultaneous down-conversion and amplification of the high frequency modulated photodiode (PD) current. The TIA achieves 92 dS Ω conversion gain with 0.5 V modulating voltage. The measured IIP(3) is 10.6/M. The amplifier together with the 50 Ω output buffer draws 23 mA from a1.8 V power supply.

1300 nm wavelength InAs quantum dot photodetector grown on silicon.

PubMed

Sandall, Ian; Ng, Jo Shien; David, John P R; Tan, Chee Hing; Wang, Ting; Liu, Huiyun

2012-05-07

The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon substrate have been investigated to evaluate their potential as both photodiodes and avalanche photodiodes (APDs) operating at a wavelength of 1300 nm. A peak responsivity of 5 mA/W was observed at 1280 nm, with an absorption tail extending beyond 1300 nm, while the dark currents were two orders of magnitude lower than those reported for Ge on Si photodiodes. The diodes exhibited avalanche breakdown at 22 V reverse bias which is probably dominated by impact ionisation occurring in the GaAs and AlGaAs barrier layers. A red shift in the absorption peak of 61.2 meV was measured when the reverse bias was increased from 0 to 22 V, which we attributed to the quantum confined stark effect. This shift also leads to an increase in the responsivity at a fixed wavelength as the bias is increased, yielding a maximum increase in responsivity by a factor of 140 at the wavelength of 1365 nm, illustrating the potential for such a structure to be used as an optical modulator.

Efficient light collection from crystal scintillators using a compound parabolic concentrator coupled to an avalanche photodiode

NASA Astrophysics Data System (ADS)

Jenke, P. A.; Briggs, M. S.; Bhat, P. N.; Reardon, P.; Connaughton, V.; Wilson-Hodge, C.

2013-09-01

In support of improved gamma-ray detectors for astrophysics and observations of Terrestrial Gamma-ray Flashes (TGFs), we have designed a new approach for the collection and detection of optical photons from scintillators such as Sodium Iodide and Lanthanum Bromide using a light concentrator coupled to an Avalanche photodiode (APD). The APD has many advantages over traditional photomultiplier tubes such as their low power consumption, their compact size, their durability, and their very high quantum efficiency. The difficulty in using these devices in gamma-ray astronomy has been coupling their relatively small active area to the large scintillators necessary for gamma-ray science. Our solution is to use an acrylic Compound Parabolic Concentrator (CPC) to match the large output area of the scintillation crystal to the smaller photodiode. These non-imaging light concentrators exceed the light concentration of focused optics and are light and inexpensive to produce. We present our results from the analysis and testing of such a system including gains in light collecting efficiency, energy resolution of nuclear decay lines, as well as our design for a new, fast TGF detector.

Negative Avalanche Feedback Detectors for Photon-Counting Optical Communications

NASA Technical Reports Server (NTRS)

Farr, William H.

2009-01-01

Negative Avalanche Feedback photon counting detectors with near-infrared spectral sensitivity offer an alternative to conventional Geiger mode avalanche photodiode or phototube detectors for free space communications links at 1 and 1.55 microns. These devices demonstrate linear mode photon counting without requiring any external reset circuitry and may even be operated at room temperature. We have now characterized the detection efficiency, dark count rate, after-pulsing, and single photon jitter for three variants of this new detector class, as well as operated these uniquely simple to use devices in actual photon starved free space optical communications links.

Temperature Control of Avalanche Photodiode Using Thermoelectric Cooler

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Luck, William S., Jr.; DeYoung, Russell J.

1999-01-01

Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrared optical detection applications. Although APDs are compact, rugged, and have an internal gain mechanism that is suitable for low light intensity; their responsivity, and therefore their output, is strongly dependent on the device temperature. Thermoelectric coolers (TEC) offers a suitable solution to this problem. A TEC is a solid state cooling device, which can be controlled by changing its current. TECs are compact and rugged, and they can precisely control the temperature to within 0.1 C with more than a 150 C temperature gradient between its surfaces. In this Memorandum, a proportional integral (PI) temperature controller for APDs using a TEC is discussed. The controller is compact and can successfully cool the APD to almost 0 C in an ambient temperature environment of up to 27 C.

Active quench and reset integrated circuit with novel hold-off time control logic for Geiger-mode avalanche photodiodes.

PubMed

Deng, Shijie; Morrison, Alan P

2012-09-15

This Letter presents an active quench-and-reset circuit for Geiger-mode avalanche photodiodes (GM-APDs). The integrated circuit was fabricated using a conventional 0.35 μm complementary metal oxide semiconductor process. Experimental results show that the circuit is capable of linearly setting the hold-off time from several nanoseconds to microseconds with a resolution of 6.5 ns. This allows the selection of the optimal afterpulse-free hold-off time for the GM-APD via external digital inputs or additional signal processing circuitry. Moreover, this circuit resets the APD automatically following the end of the hold-off period, thus simplifying the control for the end user. Results also show that a minimum dead time of 28.4 ns is achieved, demonstrating a saturated photon-counting rate of 35.2 Mcounts/s.

Comparative analysis of high-performance infrared avalanche InxGa1-xAsyP1-y and Hg1-xCdxTe heterophotodiodes

NASA Astrophysics Data System (ADS)

Kholodnov, Viacheslav; Drugova, Albina; Nikitin, Mikhail; Chekanova, Galina

2012-10-01

Technology of infrared (IR) avalanche photodiodes (APDs) gradually moves from simple single element APD to 2D focal plane arrays (FPA). Spectral covering of APDs is expanded continuously from classic 1.3 μm to longer wavelengths due to using of narrow-gap semiconductor materials like Hg1-xCdxTe. APDs are of great interest to developers and manufacturers of different optical communication, measuring and 3D reconstruction thermal imaging systems. Major IR detector materials for manufacturing of high-performance APDs became heteroepitaxial structures InxGa1-xAsyP1-y and Hg1-xCdxTe. Progress in IR APD technology was achieved through serious improvement in material growing techniques enabling forming of multilayer heterostuctures with separate absorption and multiplication regions (SAM). Today SAM-APD design can be implemented both on InxGa1-xAsyP1-y and Hg1-xCdxTe multilayer heteroepitaxial structures. To create the best performance optimal design avalanche heterophotodiode (AHPD) it is necessary to carry out a detailed theoretical analysis of basic features of generation, avalanche breakdown and multiplication of charge carriers in proper heterostructure. Optimization of AHPD properties requires comprehensive estimation of AHPD's pixel performance depending on pixel's multi-layer structure design, layers doping, distribution of electric field in the structure and operating temperature. Objective of the present article is to compare some features of 1.55 μm SAM-AHPDs based on InxGa1-xAsyP1-y and Hg1-xCdxTe.

Solid state tritium detector for biomedical applications

NASA Astrophysics Data System (ADS)

Gordon, J. S.; Farrell, R.; Daley, K.; Oakes, C. E.

1994-08-01

Radioactive labeling of proteins is a very important technique used in biomedical research to identify, isolate, and investigate the expression and properties of proteins in biological systems. In such procedures, the preferred radiolabel is often tritium. Presently, binding assays involving tritium are carried out using inconvenient and expensive techniques which rely on the use of scintillation fluid counting systems. This traditional method involves both time-consuming laboratory protocols and the generation of substantial quantities of radioactive and chemical waste. We have developed a novel technology to measure the tritium content of biological specimens that does not rely on scintillation fluids. The tritiated samples can be positioned directly under a large area, monolithic array of specially prepared avalanche photodiodes (APDs) which record the tritium activity distribution at each point within the field of view of the array. The 1 mm(sup 2) sensing elements exhibit an intrinsic tritium beta detection efficiency of 27% with high gain uniformity and very low cross talk.

III-V strain layer superlattice based band engineered avalanche photodiodes (Presentation Recording)

NASA Astrophysics Data System (ADS)

Ghosh, Sid

2015-08-01

Laser detection and ranging (LADAR)-based systems operating in the Near Infrared (NIR) and Short Wave Infrared (SWIR) have become popular optical sensors for remote sensing, medical, and environmental applications. Sophisticated laser-based radar and weapon systems used for long-range military and astronomical applications need to detect, recognize, and track a variety of targets under a wide spectrum of atmospheric conditions. Infrared APDs play an important role in LADAR systems by integrating the detection and gain stages in a single device. Robust silicon-APDs are limited to visible and very near infrared region (< 1 um), while InGaAs works well up to wavelengths of about 1.5um. Si APDs have low multiplication or excess noise but are limited to below 1um due very poor quantum efficiency above 0.8um. InGaAs and Ge APDs operate up to wavelengths of 1.5um but have poor multiplication or excess noise due to a low impact ionization coefficient ratio between electrons and holes. For the past several decades HgCdTe has been traditionally used in longer wavelength (> 3um) infrared photon detection applications. Recently, various research groups (including Ghosh et. al.) have reported SWIR and MWIR HgCdTe APDs on CdZnTe and Si substrates. However, HgCdTe APDs suffer from low breakdown fields due to material defects, and excess noise increases significantly at high electric fields. During the past decade, InAs/GaSb Strain Layer Superlattice (SLS) material system has emerged as a potential material for the entire infrared spectrum because of relatively easier growth, comparable absorption coefficients, lower tunneling currents and longer Auger lifetimes resulting in enhanced detectivities (D*). Band engineering in type II SLS allows us to engineer avalanche properties of electrons and holes. This is a great advantage over bulk InGaAs and HgCdTe APDs where engineering avalanche properties is not possible. The talk will discuss the evolution of superlattice based avalanche photodiodes and some of the recent results on the work being done at Raytheon on SWIR avalanche photodiodes.

Fiscal Year 2011 Director’s Strategic Initiative Final Report Heterogeneous Device Architectures Incorporating Nitride Semiconductors for Enhanced Functionality of Optoelectronic Devices

DTIC Science & Technology

2014-03-01

electromagnetic radiation across the spectrum from the ultraviolet ( UV ) to terahertz, heterogeneous integration of these materials with others having different...weak absorption that limit the QE of homogenous SiC-based photodetectors in the deep UV and near UV regions, respectively. Furthermore, we have...Polarization-Enhanced III-Nitride-SiC Avalanche Photodiodes Semiconductor-based ultraviolet ( UV ) avalanche photodetectors (APDs) have significant promise

Optical design of infrared pyramid wavefront sensor for the MMT

NASA Astrophysics Data System (ADS)

Chen, Shaojie; Sivanandam, Suresh; Liu, Siqi; Veran, Jean-Pierre; Hinz, Phil; Mieda, Etsuko; Hardy, Tim; Lardiere, Olivier

2017-09-01

We report the optical design of an infrared (0.85-1.8 μm) pyramid wavefront sensor (IRPWFS) that is designed for the 6.5m MMT on telescope adaptive optics system using the latest developments in low-noise infrared avalanche photodiode arrays. The comparison between the pyramid and the double-roof prism based wavefront sensors and the evaluation of their micro pupils' quality are presented. According to our analysis, the use of two double-roof prisms with achromatic materials produces the competitive performance when compared to the traditional pyramid prism, which is difficult to manufacture. The final micro pupils on the image plane have the residual errors of pupil position, chromatism, and distortion within 1/10 pixel over the 2×2 arcsecond field of view, which meet the original design goals.

Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

NASA Technical Reports Server (NTRS)

Huntington, Andrew

2013-01-01

The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

Effect of electron irradiation dose on the performance of avalanche photodiode electron detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawauchi, Taizo; Wilde, Markus; Fukutani, Katsuyuki

2009-01-01

Avalanche photodiodes (APDs) are efficient detectors for electrons with energies below 100 keV. The damaging effects of 8 keV electron beam irradiation on the dark current and the output signal of the APD detector were investigated in this study. The APD dark current increases after electron doses exceeding 1.4x10{sup 13} cm{sup -2}. Preirradiation by high doses of 8 keV electrons further causes a deformation of the pulse height distribution of the APD output in the subsequent detection of low-flux electrons. This effect is particularly prominent when the energy of the detected electrons is lower than that of the damaging electrons.more » By comparing the experimental data with results of a simulation based on an electron trapping model, we conclude that the degradation of the APD performance is attributable to an enhancement of secondary-electron trapping at irradiation induced defects.« less

Avalanche photodiode based time-of-flight mass spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ogasawara, Keiichi, E-mail: kogasawara@swri.edu; Livi, Stefano A.; Desai, Mihir I.

2015-08-15

This study reports on the performance of Avalanche Photodiodes (APDs) as a timing detector for ion Time-of-Flight (TOF) mass spectroscopy. We found that the fast signal carrier speed in a reach-through type APD enables an extremely short timescale response with a mass or energy independent <2 ns rise time for <200 keV ions (1−40 AMU) under proper bias voltage operations. When combined with a microchannel plate to detect start electron signals from an ultra-thin carbon foil, the APD comprises a novel TOF system that successfully operates with a <0.8 ns intrinsic timing resolution even using commercial off-the-shelf constant-fraction discriminators. Bymore » replacing conventional total-energy detectors in the TOF-Energy system, APDs offer significant power and mass savings or an anti-coincidence background rejection capability in future space instrumentation.« less

Infrasound and seismic array analysis of snow avalanches: results from the 2015-2017 experiment in Dischma valley above Davos, Switzerland

NASA Astrophysics Data System (ADS)

Marchetti, Emanuele; van Herwijnen, Alec; Ripepe, Maurizio

2017-04-01

While flowing downhill a snow avalanche radiates seismic and infrasonic waves being coupled both with the ground and the atmosphere. Infrasound waves are mostly generated by the powder cloud of the avalanche, while seismic waves are mostly generated by the dense flowing snow mass on the ground, resulting in different energy partitioning between seismic and infrasound for different kinds of avalanches. This results into a general uncertainty on the efficiency of seismic and infrasound monitoring, in terms of the size and source-to-receiver distance of detectable events. Nevertheless, both seismic and infrasound have been used as monitoring systems for the remote detection of snow avalanches, being the reliable detection of snow avalanches of crucial importance to better understand triggering mechanisms, identify possible precursors, or improve avalanche forecasting. We present infrasonic and seismic array data collected during the winters of 2015- 2016 and 2016-2017 in the Dischma valley above Davos, Switzerland, where a five element infrasound array and a 7 element seismic array had been deployed at short distance from each other and with several avalanche paths nearby. Avalanche observation in the area is performed through automatic cameras providing additional information on the location, type (dry or wet), size and occurrence time of the avalanches released. The use of arrays instead of single sensors allows increasing the signal-to-noise ratio and identifying events in terms of back-azimuth and apparent velocity of the wave-field, thus providing indication on the source position of the recorded signal. For selected snow avalanches captured with automatic cameras, we therefore perform seismic and infrasound array processing to constrain the avalanche path and dynamics and investigate the partitioning of seismic and infrasound energy for the different portions of the avalanche path. Moreover we compare results of seismic and infrasound array processing for the whole 2015-2016 winter season in order to investigate the ability of the two monitoring systems to identify and characterize snow avalanches and the benefit of the combined seismo-acoustic analysis.

Pixelated Geiger-Mode Avalanche Photo-Diode Characterization Through Dark Current Measurement

NASA Astrophysics Data System (ADS)

Amaudruz, Pierre-Andre; Bishop, Daryl; Gilhully, Colleen; Goertzen, Andrew; James, Lloyd; Kozlowski, Piotr; Retiere, Fabrice; Shams, Ehsan; Sossi, Vesna; Stortz, Greg; Thiessen, Jonathan D.; Thompson, Christopher J.

2014-06-01

PIXELATED geiger-mode avalanche photodiodes (PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic physics experiments, which requires extensive test and operation procedures in order to achieve uniform responses from all the devices. In this paper, we show for two PPD brands, Hamamatsu MPPC and SensL SPM, that at room temperature, the dark noise rate, breakdown voltage and rate of correlated avalanches can be inferred from the sole measure of dark current as a function of operating voltage, hence greatly simplifying the characterization procedure. We introduce a custom electronics system that allows measurement for many devices concurrently, hence allowing rapid testing and monitoring of many devices at low cost. Finally, we show that the dark current of Hamamastu Multi-Pixel Photon Counter (MPPC) is rather independent of temperature at constant operating voltage, hence the current measure cannot be used to probe temperature variations. On the other hand, the MPPC current can be used to monitor light source conditions in DC mode without requiring strong temperature stability, as long as the integrated source brightness is comparable to the dark noise rate.

A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology.

PubMed

Padmanabhan, Preethi; Hancock, Bruce; Nikzad, Shouleh; Bell, L Douglas; Kroep, Kees; Charbon, Edoardo

2018-02-03

Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 × 8 capacitive transimpedance amplifiers (CTIAs), implemented in a 0.35 µm high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to ≈80 V with verified measurement results. The readout offers a conversion gain of 0.43 µV/e - , obtaining avalanche gains up to 10³. Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology.

How to squeeze high quantum efficiency and high time resolution out of a SPAD

NASA Technical Reports Server (NTRS)

Lacaita, A.; Zappa, F.; Cova, Sergio; Ripamonti, Giancarlo; Spinelli, A.

1993-01-01

We address the issue whether Single-Photon Avalanche Diodes (SPADs) can be suitably designed to achieve a trade-off between quantum efficiency and time resolution performance. We briefly recall the physical mechanisms setting the time resolution of avalanche photodiodes operated in single-photon counting, and we give some criteria for the design of SPADs with a quantum efficiency better than l0 percent at 1064 nm together with a time resolution below 50 ps rms.

Single Photon Counting Detectors for Low Light Level Imaging Applications

NASA Astrophysics Data System (ADS)

Kolb, Kimberly

2015-10-01

This dissertation presents the current state-of-the-art of semiconductor-based photon counting detector technologies. HgCdTe linear-mode avalanche photodiodes (LM-APDs), silicon Geiger-mode avalanche photodiodes (GM-APDs), and electron-multiplying CCDs (EMCCDs) are compared via their present and future performance in various astronomy applications. LM-APDs are studied in theory, based on work done at the University of Hawaii. EMCCDs are studied in theory and experimentally, with a device at NASA's Jet Propulsion Lab. The emphasis of the research is on GM-APD imaging arrays, developed at MIT Lincoln Laboratory and tested at the RIT Center for Detectors. The GM-APD research includes a theoretical analysis of SNR and various performance metrics, including dark count rate, afterpulsing, photon detection efficiency, and intrapixel sensitivity. The effects of radiation damage on the GM-APD were also characterized by introducing a cumulative dose of 50 krad(Si) via 60 MeV protons. Extensive development of Monte Carlo simulations and practical observation simulations was completed, including simulated astronomical imaging and adaptive optics wavefront sensing. Based on theoretical models and experimental testing, both the current state-of-the-art performance and projected future performance of each detector are compared for various applications. LM-APD performance is currently not competitive with other photon counting technologies, and are left out of the application-based comparisons. In the current state-of-the-art, EMCCDs in photon counting mode out-perform GM-APDs for long exposure scenarios, though GM-APDs are better for short exposure scenarios (fast readout) due to clock-induced-charge (CIC) in EMCCDs. In the long term, small improvements in GM-APD dark current will make them superior in both long and short exposure scenarios for extremely low flux. The efficiency of GM-APDs will likely always be less than EMCCDs, however, which is particularly disadvantageous for moderate to high flux rates where dark noise and CIC are insignificant noise sources. Research into decreasing the dark count rate of GM-APDs will lead to development of imaging arrays that are competitive for low light level imaging and spectroscopy applications in the near future.

64-element photodiode array for scintillation detection of x-rays

NASA Astrophysics Data System (ADS)

Wegrzecki, Maciej; Wolski, Dariusz; Bar, Jan; Budzyński, Tadeusz; Chłopik, Arkadiusz; Grabiec, Piotr; Kłos, Helena; Panas, Andrzej; Piotrowski, Tadeusz; Słysz, Wojciech; Stolarski, Maciej; Szmigiel, Dariusz; Wegrzecka, Iwona; Zaborowski, Michał

2014-08-01

The paper presents the design, technology and parameters of a new, silicon 64-element linear photodiode array developed at the Institute of Electron Technology (ITE) for the detection of scintillations emitted by CsI scintillators (λ≈550 nm). The arrays are used in a device for examining the content of containers at border crossings under development at the National Centre for Nuclear Research. Two arrays connected with a scintillator block (128 CsI scintillators) form a 128-channel detection module. The array consists of 64 epiplanar photodiode structures (5.1 × 7.2 mm) and a 5.3 mm module. p+-ν-n+ photodiode structures are optimised for the detection of radiation of λ≈ 550 nm wavelength with no voltage applied (photovoltaic mode). The structures are mounted on an epoxy-glass laminate substrate, copper-clad on both sides, on which connections with a common anode and separate cathode leads are located. The photosensitive surface of photodiodes is covered with a special silicone gel, which protects photodiodes against the mechanical impact of scintillators

Photodiode arrays having minimized cross-talk between diodes

DOEpatents

Guckel, Henry; McNamara, Shamus P.

2000-10-17

Photodiode arrays are formed with close diode-to-diode spacing and minimized cross-talk between diodes in the array by isolating the diodes from one another with trenches that are formed between the photodiodes in the array. The photodiodes are formed of spaced regions in a base layer, each spaced region having an impurity type opposite to that of the base layer to define a p-n junction between the spaced regions and the base layer. The base layer meets a substrate at a boundary, with the substrate being much more heavily doped than the base layer with the same impurity type. The trenches extend through the base layer and preferably into the substrate. Minority carriers generated by absorption of light photons in the base layer can only migrate to an adjacent photodiode through the substrate. The lifetime and the corresponding diffusion length of the minority carriers in the substrate is very short so that all minority carriers recombine in the substrate before reaching an adjacent photodiode.

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes. Degree awarded Oct. 1997

NASA Technical Reports Server (NTRS)

Hunt, W. D.; Brennan, K. F.; Summers, C. J.; Yun, Ilgu

1994-01-01

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

Gated IR imaging with 128 × 128 HgCdTe electron avalanche photodiode FPA

NASA Astrophysics Data System (ADS)

Beck, Jeff; Woodall, Milton; Scritchfield, Richard; Ohlson, Martha; Wood, Lewis; Mitra, Pradip; Robinson, Jim

2007-04-01

The next generation of IR sensor systems will include active imaging capabilities. One example of such a system is a gated-active/passive system. The gated-active/passive system promises long-range target detection and identification. A detector that is capable of both active and passive modes of operation opens up the possibility of a self-aligned system that uses a single focal plane. The detector would need to be sensitive in the 3-5 μm band for passive mode operation. In the active mode, the detector would need to be sensitive in eye-safe range, e.g. 1.55 μm, and have internal gain to achieve the required system sensitivity. The MWIR HgCdTe electron injection avalanche photodiode (e-APD) not only provides state-of-the-art 3-5 μm spectral sensitivity, but also high avalanche photodiode gain without minimal excess noise. Gains of greater than 1000 have been measured in MWIR e-APDs with a gain independent excess noise factor of 1.3. This paper reports the application of the mid-wave HgCdTe e-APD for near-IR gated-active/passive imaging. Specifically a 128x128 FPA composed of 40 μm pitch, 4.2 μm to 5 μm cutoff, APD detectors with a custom readout integrated circuit was designed, fabricated, and tested. Median gains as high as 946 at 11 V bias with noise equivalent inputs as low as 0.4 photon were measured at 80 K. A gated imaging demonstration system was designed and built using commercially available parts. High resolution gated imagery out to 9 km was obtained with this system that demonstrated predicted MTF, precision gating, and sub 10 photon sensitivity.

An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

NASA Astrophysics Data System (ADS)

Tang, Yin; Cai, Qing; Yang, Lian-Hong; Dong, Ke-Xiu; Chen, Dun-Jun; Lu, Hai; Zhang, Rong; Zheng, You-Dou

2017-03-01

Not Available Project supported by the State Key Project of Research and Development Plan, China (Grant No. 2016YFB0400903), the National Natural Science Foundation of China (Grant Nos. 61634002, 61274075, and 61474060), the Key Project of Jiangsu Province, China (Grant No. BE2016174), the Anhui University Natural Science Research Project, China (Grant No. KJ2015A153), the Open Fund (KFS) of State Key Lab of Optical Technologieson Nanofabrication and Microengineering, Institute of Optics and Electronics, Chinese Academy of Science.

Deterministic filtering of breakdown flashing at telecom wavelengths

NASA Astrophysics Data System (ADS)

Marini, Loris; Camphausen, Robin; Eggleton, Benjamin J.; Palomba, Stefano

2017-11-01

Breakdown flashes are undesired photo-emissions from the active area of single-photon avalanche photo-diodes. They arise from radiative recombinations of hot carriers generated during an avalanche and can induce crosstalk, compromise the measurement of optical quantum states, and hinder the security of quantum communications. Although the spectrum of this emission extends over hundreds of nanometers, active quenching may lead to a smaller uncertainty in the time of emission, thus enabling deterministic filtering. Our results pave the way to broadband interference mitigation in time-correlated single-photon applications.

Monolithic integration of an InP-based 4 × 25 GHz photodiode array to an O-band arrayed waveguide grating demultiplexer

NASA Astrophysics Data System (ADS)

Ye, Han; Han, Qin; Lv, Qianqian; Pan, Pan; An, Junming; Yang, Xiaohong

2017-12-01

We demonstrate the monolithic integration of a uni-traveling carrier photodiode array with a 4 channel, O-band arrayed waveguide grating demultiplexer on the InP platform by the selective area growth technique. An extended coupling layer at the butt-joint is adopted to ensure both good fabrication compatibility and high photodiode quantum efficiency of 77%. The fabricated integrated chip exhibits a uniform bandwidth over 25 GHz for each channel and a crosstalk below -22 dB.

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

PubMed Central

Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

2016-01-01

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

Investigation of Avalanche Photodiodes and Multipixel Photon Counters as Light Detectors for Cosmic Rays

NASA Astrophysics Data System (ADS)

Vasquez, Jaime; Saavedra, Arthur; Ramos, Roxana; Tavares, Pablo; Wade, Marcus; Fan, Sewan; Haag, Brooke

2013-04-01

Through the Research Scholars Institute, students of Hartnell Community College experimented with the application of avalanche photodiodes (APDs) as cosmic ray detectors during the summer of 2012. An APD detector was coupled with a 10 meter long wavelength shifting fiber (WSF) wrapped around a cylindrical plastic scintillator to maximize signal detection. A photomultiplier tube (PMT) was used in conjunction to detect the same scintillation light caused by incoming cosmic rays. Two APD detectors were evaluated to confirm the viability of the setup. In addition, a similar setup was recently utilized to implement multi-pixel photon counters (MPPCs) as readout detectors. Under this configuration, a high gain preamplifier was used to amplify the signals for both the MPPC and APD detectors. We report on our results characterizing the MPPC and discuss its overall performance. Compared to the APD, our findings suggest that the MPPC detector has greater sensitivity in detecting weak light signals, and can be used in place of the PMT for certain counting applications.

Compact lidar system using laser diode, binary continuous wave power modulation, and an avalanche photodiode-based receiver controlled by a digital signal processor

NASA Astrophysics Data System (ADS)

Ardanuy, Antoni; Comerón, Adolfo

2018-04-01

We analyze the practical limits of a lidar system based on the use of a laser diode, random binary continuous wave power modulation, and an avalanche photodiode (APD)-based photereceiver, combined with the control and computing power of the digital signal processors (DSP) currently available. The target is to design a compact portable lidar system made all in semiconductor technology, with a low-power demand and an easy configuration of the system, allowing change in some of its features through software. Unlike many prior works, we emphasize the use of APDs instead of photomultiplier tubes to detect the return signal and the application of the system to measure not only hard targets, but also medium-range aerosols and clouds. We have developed an experimental prototype to evaluate the behavior of the system under different environmental conditions. Experimental results provided by the prototype are presented and discussed.

Cryptographic robustness of practical quantum cryptography: BB84 key distribution protocol

DOE Office of Scientific and Technical Information (OSTI.GOV)

Molotkov, S. N.

2008-07-15

In real fiber-optic quantum cryptography systems, the avalanche photodiodes are not perfect, the source of quantum states is not a single-photon one, and the communication channel is lossy. For these reasons, key distribution is impossible under certain conditions for the system parameters. A simple analysis is performed to find relations between the parameters of real cryptography systems and the length of the quantum channel that guarantee secure quantum key distribution when the eavesdropper's capabilities are limited only by fundamental laws of quantum mechanics while the devices employed by the legitimate users are based on current technologies. Critical values are determinedmore » for the rate of secure real-time key generation that can be reached under the current technology level. Calculations show that the upper bound on channel length can be as high as 300 km for imperfect photodetectors (avalanche photodiodes) with present-day quantum efficiency ({eta} {approx} 20%) and dark count probability (p{sub dark} {approx} 10{sup -7})« less

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

PubMed

Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas

2016-06-21

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

NASA Astrophysics Data System (ADS)

Gasmi, Khaled

2018-02-01

An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

Cryptographic robustness of practical quantum cryptography: BB84 key distribution protocol

NASA Astrophysics Data System (ADS)

Molotkov, S. N.

2008-07-01

In real fiber-optic quantum cryptography systems, the avalanche photodiodes are not perfect, the source of quantum states is not a single-photon one, and the communication channel is lossy. For these reasons, key distribution is impossible under certain conditions for the system parameters. A simple analysis is performed to find relations between the parameters of real cryptography systems and the length of the quantum channel that guarantee secure quantum key distribution when the eavesdropper’s capabilities are limited only by fundamental laws of quantum mechanics while the devices employed by the legitimate users are based on current technologies. Critical values are determined for the rate of secure real-time key generation that can be reached under the current technology level. Calculations show that the upper bound on channel length can be as high as 300 km for imperfect photodetectors (avalanche photodiodes) with present-day quantum efficiency (η ≈ 20%) and dark count probability ( p dark ˜ 10-7).

A silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

NASA Astrophysics Data System (ADS)

Hsieh, C.-L.; Haskovec, J.; Carlstrom, T. N.; Deboo, J. C.; Greenfield, C. M.; Snider, R. T.; Trost, P.

1990-06-01

A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge sensitive preamplifier was developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N = 1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low frequency background light component. The background signal is amplified with a computer controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Z sub eff measurements of the plasma. The signal processing was analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis.

Silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

NASA Astrophysics Data System (ADS)

Hsieh, C. L.; Haskovec, J.; Carlstrom, T. N.; DeBoo, J. C.; Greenfield, C. M.; Snider, R. T.; Trost, P.

1990-10-01

A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature-controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge-sensitive preamplifier has been developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N=1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low-frequency background light component. The background signal is amplified with a computer-controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Zeff measurements of the plasma. The signal processing has been analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis.

Electro-optic modulator based gate transient suppression for sine-wave gated InGaAs/InP single photon avalanche photodiode

NASA Astrophysics Data System (ADS)

Zhang, Yixin; Zhang, Xuping; Shi, Yuanlei; Ying, Zhoufeng; Wang, Shun

2014-06-01

Capacitive gate transient noise has been problematic for the high-speed single photon avalanche photodiode (SPAD), especially when the operating frequency extends to the gigahertz level. We proposed an electro-optic modulator based gate transient noise suppression method for sine-wave gated InGaAs/InP SPAD. With the modulator, gate transient is up-converted to its higher-order harmonics that can be easily removed by low pass filtering. The proposed method enables online tuning of the operating rate without modification of the hardware setup. At 250 K, detection efficiency of 14.7% was obtained with 4.8×10-6 per gate dark count and 3.6% after-pulse probabilities for 1550-nm optical signal under 1-GHz gating frequency. Experimental results have shown that the performance of the detector can be maintained within a designated frequency range from 0.97 to 1.03 GHz, which is quite suitable for practical high-speed SPAD applications operated around the gigahertz level.

Superlinear threshold detectors in quantum cryptography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lydersen, Lars; Maroey, Oystein; Skaar, Johannes

2011-09-15

We introduce the concept of a superlinear threshold detector, a detector that has a higher probability to detect multiple photons if it receives them simultaneously rather than at separate times. Highly superlinear threshold detectors in quantum key distribution systems allow eavesdropping the full secret key without being revealed. Here, we generalize the detector control attack, and analyze how it performs against quantum key distribution systems with moderately superlinear detectors. We quantify the superlinearity in superconducting single-photon detectors based on earlier published data, and gated avalanche photodiode detectors based on our own measurements. The analysis shows that quantum key distribution systemsmore » using detector(s) of either type can be vulnerable to eavesdropping. The avalanche photodiode detector becomes superlinear toward the end of the gate. For systems expecting substantial loss, or for systems not monitoring loss, this would allow eavesdropping using trigger pulses containing less than 120 photons per pulse. Such an attack would be virtually impossible to catch with an optical power meter at the receiver entrance.« less

High-speed, large-area, p-i-n InGaAs photodiode linear array at 2-micron wavelength

NASA Astrophysics Data System (ADS)

Joshi, Abhay; Datta, Shubhashish

2012-06-01

We present 16-element and 32-element lattice-mismatched InGaAs photodiode arrays having a cut-off wavelength of ~2.2 um. Each 100 um × 200 um large pixel of the 32-element array has a capacitance of 2.5 pF at 5 V reverse bias, thereby allowing a RC-limited bandwidth of ~1.3 GHz. At room temperature, each pixel demonstrates a dark current of 25 uA at 5 V reverse bias. Corresponding results for the 16-element array having 200 um × 200 um pixels are also reported. Cooling the photodiode array to 150K is expected to reduce its dark current to < 50 nA per pixel at 5 V reverse bias. Additionally, measurement results of 2-micron single photodiodes having 16 GHz bandwidth and corresponding PIN-TIA photoreceiver having 6 GHz bandwidth are also reported.

A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology †

PubMed Central

Hancock, Bruce; Nikzad, Shouleh; Bell, L. Douglas; Kroep, Kees; Charbon, Edoardo

2018-01-01

Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 × 8 capacitive transimpedance amplifiers (CTIAs), implemented in a 0.35 µm high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to ≈80 V with verified measurement results. The readout offers a conversion gain of 0.43 µV/e−, obtaining avalanche gains up to 103. Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology. PMID:29401655

Progress on development of an airborne two-micron IPDA lidar for water vapor and carbon dioxide column measurements

NASA Astrophysics Data System (ADS)

Singh, Upendra N.; Petros, Mulugeta; Refaat, Tamer F.; Yu, Jirong; Antill, Charles W.; Taylor, Bryant D.; Bowen, Stephen C.; Welters, Angela M.; Remus, Ruben G.; Wong, Teh-Hwa; Reithmaier, Karl; Lee, Jane; Ismail, Syed

2017-09-01

An airborne 2-μm triple-pulse integrated path differential absorption (IPDA) lidar is currently under development at NASA Langley Research Center (LaRC). This lidar targets both atmospheric carbon dioxide (CO2) and water vapor (H2O) column measurements, simultaneously. Advancements in the development of this IPDA lidar are presented in this paper. Updates on advanced two-micron triple-pulse high-energy laser transmitter will be given including packaging and lidar integration status. In addition, receiver development updates will also be presented. This includes a state-of-the-art detection system integrated at NASA Goddard Space Flight Center. This detection system is based on a newly developed HgCdTe (MCT) electron-initiated avalanche photodiode (e-APD) array. Future plan for IPDA lidar system for ground integration, testing and flight validation will be discussed.

Camera Concepts for the Advanced Gamma-Ray Imaging System (AGIS)

NASA Astrophysics Data System (ADS)

Nepomuk Otte, Adam

2009-05-01

The Advanced Gamma-Ray Imaging System (AGIS) is a concept for the next generation observatory in ground-based very high energy gamma-ray astronomy. Design goals are ten times better sensitivity, higher angular resolution, and a lower energy threshold than existing Cherenkov telescopes. Each telescope is equipped with a camera that detects and records the Cherenkov-light flashes from air showers. The camera is comprised of a pixelated focal plane of blue sensitive and fast (nanosecond) photon detectors that detect the photon signal and convert it into an electrical one. The incorporation of trigger electronics and signal digitization into the camera are under study. Given the size of AGIS, the camera must be reliable, robust, and cost effective. We are investigating several directions that include innovative technologies such as Geiger-mode avalanche-photodiodes as a possible detector and switched capacitor arrays for the digitization.

Progress on Development of an Airborne Two-Micron IPDA Lidar for Water Vapor and Carbon Dioxide Column Measurements

NASA Technical Reports Server (NTRS)

Singh, Upendra N.; Petros, Mulugeta; Refaat, Tamer F.; Yu, Jirong; Antill, Charles W.; Taylor, Bryant D.; Bowen, Stephen C.; Welters, Angela M.; Remus, Ruben G.; Wong, Teh-Hwa;

Pin-photodiode array for the measurement of fan-beam energy and air kerma distributions of X-ray CT scanners.

PubMed

Haba, Tomonobu; Koyama, Shuji; Aoyama, Takahiko; Kinomura, Yutaka; Ida, Yoshihiro; Kobayashi, Masanao; Kameyama, Hiroshi; Tsutsumi, Yoshinori

2016-07-01

Patient dose estimation in X-ray computed tomography (CT) is generally performed by Monte Carlo simulation of photon interactions within anthropomorphic or cylindrical phantoms. An accurate Monte Carlo simulation requires an understanding of the effects of the bow-tie filter equipped in a CT scanner, i.e. the change of X-ray energy and air kerma along the fan-beam arc of the CT scanner. To measure the effective energy and air kerma distributions, we devised a pin-photodiode array utilizing eight channels of X-ray sensors arranged at regular intervals along the fan-beam arc of the CT scanner. Each X-ray sensor consisted of two plate type of pin silicon photodiodes in tandem - front and rear photodiodes - and of a lead collimator, which only allowed X-rays to impinge vertically to the silicon surface of the photodiodes. The effective energy of the X-rays was calculated from the ratio of the output voltages of the photodiodes and the dose was calculated from the output voltage of the front photodiode using the energy and dose calibration curves respectively. The pin-photodiode array allowed the calculation of X-ray effective energies and relative doses, at eight points simultaneously along the fan-beam arc of a CT scanner during a single rotation of the scanner. The fan-beam energy and air kerma distributions of CT scanners can be effectively measured using this pin-photodiode array. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Large-area, low-noise, high-speed, photodiode-based fluorescence detectors with fast overdrive recovery

NASA Astrophysics Data System (ADS)

Bickman, S.; DeMille, D.

2005-11-01

Two large-area, low-noise, high-speed fluorescence detectors have been built. One detector consists of a photodiode with an area of 28mm×28mm and a low-noise transimpedance amplifier. This detector has a input light-equivalent spectral noise density of less than 3pW/√Hz , can recover from a large scattered light pulse within 10μs, and has a bandwidth of at least 900 kHz. The second detector consists of a 16-mm-diam avalanche photodiode and a low-noise transimpedance amplifier. This detector has an input light-equivalent spectral noise density of 0.08pW/√Hz , also can recover from a large scattered light pulse within 10μs, and has a bandwidth of 1 MHz.

Surface leakage current in 12.5  μm long-wavelength HgCdTe infrared photodiode arrays.

PubMed

Qiu, Weicheng; Hu, Weida; Lin, Chun; Chen, Xiaoshuang; Lu, Wei

2016-02-15

Long-wavelength (especially >12  μm) focal plane array (FPA) infrared detection is the cutting edge technique for third-generation infrared remote sensing. However, dark currents, which are very sensitive to the growth of small Cd composition HgCdTe, strongly limits the performance of long wavelength HgCdTe photodiode arrays in FPAs. In this Letter, 12.5 μm long-wavelength Hg_1-xCd_xTe (x≈0.219) infrared photodiode arrays are reported. The variable-area and variable-temperature electrical characteristics of the long-wavelength infrared photodiodes are measured. The characteristics of the extracted zero-bias resistance-area product (l/R₀A) varying with the perimeter-to-area (P/A) ratio clearly show that surface leakage current mechanisms severely limit the overall device performance. A sophisticated model has been developed for investigating the leakage current mechanism in the photodiodes. Modeling of temperature-dependent I-V characteristic indicates that the trap-assisted tunneling effect dominates the dark current at 50 K resulting in nonuniformities in the arrays. The extracted trap density, approximately 10¹³-10¹⁴  cm^-3, with an ionized energy of 30 meV is determined by simulation. The work described in this Letter provides the basic mechanisms for a better understanding of the leakage current mechanism for long-wavelength (>12  μm) HgCdTe infrared photodiode arrays.

Room temperature single-photon detectors for high bit rate quantum key distribution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Comandar, L. C.; Patel, K. A.; Engineering Department, Cambridge University, 9 J J Thomson Ave., Cambridge CB3 0FA

We report room temperature operation of telecom wavelength single-photon detectors for high bit rate quantum key distribution (QKD). Room temperature operation is achieved using InGaAs avalanche photodiodes integrated with electronics based on the self-differencing technique that increases avalanche discrimination sensitivity. Despite using room temperature detectors, we demonstrate QKD with record secure bit rates over a range of fiber lengths (e.g., 1.26 Mbit/s over 50 km). Furthermore, our results indicate that operating the detectors at room temperature increases the secure bit rate for short distances.

An economical fluorescence detector for lab-on-a-chip devices with a light emitting photodiode and a low-cost avalanche photodiode.

PubMed

Wu, Jing; Liu, Xianhu; Wang, Lili; Dong, Lijun; Pu, Qiaosheng

2012-01-21

An economical fluorescence detector was developed with an LED as the exciting source and a low-cost avalanche photodiode (APD) module as a photon sensor. The detector was arranged in an epifluorescence configuration using a microscope objective (20× or 40×) and a dichroic mirror. The low-cost APD was biased by a direct current (DC) high voltage power supply at 121 V, which is much lower than that normally used for a PMT. Both DC and square wave (SW) supplies were used to power the LED and different data treatment protocols, such as simple average for DC mode, software based lock-in amplification and time specific average for SW mode, were tested to maximize the signal-to-noise ratio. Using an LED at a DC mode with simple data averaging, a limit of detection of 0.2 nmol L(-1) for sodium fluorescein was attained, which is among the lowest ever achieved with an LED as an excitation source. The detector was successfully used in both capillary and chip electrophoresis. The most significant advantages of the detector are the compact size and low cost of its parts. The aim of the work is to prove that widely available, low-cost components for civilian use can be successfully used for miniaturized analytical devices.

Fast sub-electron detectors review for interferometry

NASA Astrophysics Data System (ADS)

Feautrier, Philippe; Gach, Jean-Luc; Bério, Philippe

2016-08-01

New disruptive technologies are now emerging for detectors dedicated to interferometry. The detectors needed for this kind of applications need antonymic characteristics: the detector noise must be very low, especially when the signal is dispersed but at the same time must also sample the fast temporal characteristics of the signal. This paper describes the new fast low noise technologies that have been recently developed for interferometry and adaptive optics. The first technology is the Avalanche PhotoDiode (APD) infrared arrays made of HgCdTe. In this paper are presented the two programs that have been developed in that field: the Selex Saphira 320x256 [1] and the 320x255 RAPID detectors developed by Sofradir/CEA LETI in France [2], [3], [4]. Status of these two programs and future developments are presented. Sub-electron noise can now be achieved in the infrared using this technology. The exceptional characteristics of HgCdTe APDs are due to a nearly exclusive impaction ionization of the electrons, and this is why these devices have been called "electrons avalanche photodiodes" or e-APDs. These characteristics have inspired a large effort in developing focal plan arrays using HgCdTe APDs for low photon number applications such as active imaging in gated mode (2D) and/or with direct time of flight detection (3D imaging) and, more recently, passive imaging for infrared wave front correction and fringe tracking in astronomical observations. In addition, a commercial camera solution called C-RED, based on Selex Saphira and commercialized by First Light Imaging [5], is presented here. Some groups are also working with instruments in the visible. In that case, another disruptive technology is showing outstanding performances: the Electron Multiplying CCDs (EMCCD) developed mainly by e2v technologies in UK. The OCAM2 camera, commercialized by First Light Imaging [5], uses the 240x240 EMMCD from e2v and is successfully implemented on the VEGA instrument on the CHARA interferometer (US) by the Lagrange laboratory from Observatoire de la Cote d'Azur. By operating the detector at gain 1000, the readout noise is as low as 0.1 e and data can be analyzed with a better contrast in photon counting mode.

High spectral resolution studies of gamma ray bursts on new missions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Desai, U. D.; Acuna, M. H.; Cline, T. L.

1996-08-01

Two new missions will be launched in 1996 and 1997, each carrying X-ray and gamma ray detectors capable of high spectral resolution at room temperature. The Argentine Satelite de Aplicaciones Cientificas (SAC-B) and the Small Spacecraft Technology Initiative (SSTI) Clark missions will each carry several arrays of X-ray detectors primarily intended for the study of solar flares and gamma-ray bursts. Arrays of small (1 cm{sup 2}) cadmium zinc telluride (CZT) units will provide x-ray measurements in the 10 to 80 keV range with an energy resolution of {approx_equal}6 keV. Arrays of both silicon avalanche photodiodes (APD) and P-intrinsic-N (PIN) photodiodesmore » (for the SAC-B mission only) will provide energy coverage from 2-25 keV with {approx_equal}1 keV resolution. For SAC-B, higher energy spectral data covering the 30-300 keV energy range will be provided by CsI(Tl) scintillators coupled to silicon APDs, resulting in similar resolution but greater simplicity relative to conventional CsI/PMT systems. Because of problems with the Pegasus launch vehicle, the launch of SAC-B has been delayed until 1997. The launch of the SSTI Clark mission is scheduled for June 1996.« less

Study of a 3×3 module array of the ECAL0 calorimeter with an electron beam at the ELSA

NASA Astrophysics Data System (ADS)

Dziewiecki, M.; Anfimov, N.; Anosov, V.; Barth, J.; Chalyshev, V.; Chirikov-Zorin, I.; Elsner, D.; Frolov, V.; Frommberger, F.; Guskov, A.; Klein, F.; Krumshteyn, Z.; Kurjata, R.; Marzec, J.; Nagaytsev, A.; Olchevski, A.; Orlov, I.; Rybnikov, A.; Rychter, A.; Selyunin, A.; Zaremba, K.; Ziembicki, M.

2015-02-01

ECAL0 is a new electromagnetic calorimeter designed for studying generalized parton distributions at the COMPASS II experiment at CERN. It will be located next to the target and will cover larger photon angles (up to 30 degrees). It is a modular high-granularity Shashlyk device with total number of individual channels of approx. 1700 and readout based on wavelength shifting fibers and micropixel avalanche photodiodes. Characterization of the calorimeter includes tests of particular sub-components, tests of complete modules and module arrays, as well as a pilot run of a fully-functional, quarter-size prototype in the COMPASS experiment. The main goals of the tests on low-intensity electron beam at the ELSA accelerator in Bonn were: to provide energy calibration using electrons, to measure angular response of the calorimeter and to perform an energy scan to cross-check previously collected data. A dedicated measurement setup was prepared for the tests, including a 3x3 array of the ECAL0 modules, a scintillating-fibre hodoscope and a remotely-controlled motorized movable platform. The measurements were performed using three electron energies: 3.2 GeV, 1.6 GeV and 0.8 GeV. They include a calibration of the whole detector array with a straight beam and multiple angular scans.

Comparison of SensL and Hamamatsu 4×4 channel SiPM arrays in gamma spectrometry with scintillators

NASA Astrophysics Data System (ADS)

Grodzicka-Kobylka, M.; Szczesniak, T.; Moszyński, M.

2017-06-01

The market of Silicon Photomultipliers (SiPMs) consists of many manufacturers that produce their detectors in different technology. Hamamatsu (Japan) and SensL (Ireland) seems to be the most popular companies that produce large SiPM arrays. The aim of this work is characterization and comparison of 4×4 channel SiPM arrays produced by these two producers. Both of the tested SiPMs are made in through-silicon via (TSV) technology, consist of 16, 3×3 mm avalanche photodiode (APD) cells and have fill factor slightly above 60%. The largest difference is a single APD cell size and hence total number of APD cells (55,424 for Hamamatsu, 76,640 for SensL). In the case of SensL SiPM, its spectral response characteristics is shifted slightly toward shorter wavelengths with maximum at 420 nm (450 nm for Hamamatsu). The presented measurements cover selection of the SiPM optimum operating voltage (in respect to energy resolution), verification of the excess noise factor and check of the linearity characteristics. Moreover, the gamma spectrometry with LSO, BGO and CsI:Tl scintillators together with pulse characteristics for these crystals (rise time and fall time) is reported, as well as temperature dependence. The presented measurements show better performance of the SensL array comparing to the Hamamatsu detector.

Capillary array scanner for time-resolved detection and identification of fluorescently labelled DNA fragments.

PubMed

Neumann, M; Herten, D P; Dietrich, A; Wolfrum, J; Sauer, M

2000-02-25

The first capillary array scanner for time-resolved fluorescence detection in parallel capillary electrophoresis based on semiconductor technology is described. The system consists essentially of a confocal fluorescence microscope and a x,y-microscope scanning stage. Fluorescence of the labelled probe molecules was excited using a short-pulse diode laser emitting at 640 nm with a repetition rate of 50 MHz. Using a single filter system the fluorescence decays of different labels were detected by an avalanche photodiode in combination with a PC plug-in card for time-correlated single-photon counting (TCSPC). The time-resolved fluorescence signals were analyzed and identified by a maximum likelihood estimator (MLE). The x,y-microscope scanning stage allows for discontinuous, bidirectional scanning of up to 16 capillaries in an array, resulting in longer fluorescence collection times per capillary compared to scanners working in a continuous mode. Synchronization of the alignment and measurement process were developed to allow for data acquisition without overhead. Detection limits in the subzeptomol range for different dye molecules separated in parallel capillaries have been achieved. In addition, we report on parallel time-resolved detection and separation of more than 400 bases of single base extension DNA fragments in capillary array electrophoresis. Using only semiconductor technology the presented technique represents a low-cost alternative for high throughput DNA sequencing in parallel capillaries.

Avalanche photodiode photon counting receivers for space-borne lidars

NASA Technical Reports Server (NTRS)

Sun, Xiaoli; Davidson, Frederic M.

1991-01-01

Avalanche photodiodes (APD) are studied for uses as photon counting detectors in spaceborne lidars. Non-breakdown APD photon counters, in which the APD's are biased below the breakdown point, are shown to outperform: (1) conventional APD photon counters biased above the breakdown point; (2) conventional APD photon counters biased above the breakdown point; and (3) APD's in analog mode when the received optical signal is extremely weak. Non-breakdown APD photon counters were shown experimentally to achieve an effective photon counting quantum efficiency of 5.0 percent at lambda = 820 nm with a dead time of 15 ns and a dark count rate of 7000/s which agreed with the theoretically predicted values. The interarrival times of the counts followed an exponential distribution and the counting statistics appeared to follow a Poisson distribution with no after pulsing. It is predicted that the effective photon counting quantum efficiency can be improved to 18.7 percent at lambda = 820 nm and 1.46 percent at lambda = 1060 nm with a dead time of a few nanoseconds by using more advanced commercially available electronic components.

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xiaodong; Pan, Ming; Hou, Liwei

2014-01-07

The gain and photoresponse characteristics have been numerically studied for back-illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes (APDs). The parameters of fundamental models are calibrated by simultaneously comparing the simulated dark and light current characteristics with the experimental results. Effects of environmental temperatures and device dimensions on gain characteristics have been investigated, and a method to achieve the optimum thickness of charge layer is obtained. The dependence of gain characteristics and breakdown voltage on the doping concentration of the charge layer is also studied in detail to get the optimal charge layer. The bias-dependent spectral responsivity and quantummore » efficiency are then presented to study the photoresponse mechanisms inside SAM GaN APDs. It is found the responsivity peak red-shifts at first due to the Franz-Keldysh effect and then blue-shifts due to the reach-through effect of the absorption layer. Finally, a new SAM GaN/AlGaN heterojunction APD structure is proposed for optimizing SAM GaN APDs.« less

Observation of 67 keV x-rays with a scintillation detector using proportional-mode silicon avalanche photodiode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inoue, Keisuke; Kishimoto, Shunji, E-mail: syunji.kishimoto@kek.jp; Inst. of Materials Structure Science, KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801

2016-07-27

We developed a scintillation X-ray detector using a proportional-mode silicon avalanche photodiode (Si-APD). We report a prototype detector using a lead-loaded plastic scintillator mounted on a proportional-mode Si-APD (active area size: 3 mm in diameter), which is operated at a low temperature. Using 67.41 keV X-rays, we could measure pulse-height spectra of scintillation light with a charge-sensitive preamplifier at 20, 0, and −35°C. Time spectra of the X-ray bunch structure were successfully recorded using a wideband and 60-dB-gain amplifier in hybrid-mode operation of the Photon Factory ring. We obtained a better time resolution of 0.51 ns (full width at half-maximum)more » for the single-bunch X-ray peak at −35°C. We were also able to observe a linear response of the scintillation pulses up to 8 Mcps for input photon rates up to 1.4 × 10{sup 8} photons/s.« less

Word timing recovery in direct detection optical PPM communication systems with avalanche photodiodes using a phase lock loop

NASA Technical Reports Server (NTRS)

Sun, Xiaoli; Davidson, Frederic M.

1990-01-01

A technique for word timing recovery in a direct-detection optical PPM communication system is described. It tracks on back-to-back pulse pairs in the received random PPM data sequences with the use of a phase locked loop. The experimental system consisted of an 833-nm AlGaAs laser diode transmitter and a silicon avalanche photodiode photodetector, and it used Q = 4 PPM signaling at source data rate 25 Mb/s. The mathematical model developed to describe system performance is shown to be in good agreement with the experimental measurements. Use of this recovered PPM word clock with a slot clock recovery system caused no measurable penalty in receiver sensitivity. The completely self-synchronized receiver was capable of acquiring and maintaining both slot and word synchronizations for input optical signal levels as low as 20 average detected photons per information bit. The receiver achieved a bit error probability of 10 to the -6th at less than 60 average detected photons per information bit.

Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

NASA Astrophysics Data System (ADS)

Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

2016-04-01

A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

Performance Dependences of Multiplication Layer Thickness for InP/InGaAs Avalanche Photodiodes Based on Time Domain Modeling

NASA Technical Reports Server (NTRS)

Xiao, Yegao; Bhat, Ishwara; Abedin, M. Nurul

2005-01-01

InP/InGaAs avalanche photodiodes (APDs) are being widely utilized in optical receivers for modern long haul and high bit-rate optical fiber communication systems. The separate absorption, grading, charge, and multiplication (SAGCM) structure is an important design consideration for APDs with high performance characteristics. Time domain modeling techniques have been previously developed to provide better understanding and optimize design issues by saving time and cost for the APD research and development. In this work, performance dependences on multiplication layer thickness have been investigated by time domain modeling. These performance characteristics include breakdown field and breakdown voltage, multiplication gain, excess noise factor, frequency response and bandwidth etc. The simulations are performed versus various multiplication layer thicknesses with certain fixed values for the areal charge sheet density whereas the values for the other structure and material parameters are kept unchanged. The frequency response is obtained from the impulse response by fast Fourier transformation. The modeling results are presented and discussed, and design considerations, especially for high speed operation at 10 Gbit/s, are further analyzed.

Large-area, low-noise, high-speed, photodiode-based fluorescence detectors with fast overdrive recovery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bickman, S.; DeMille, D.

2005-11-15

Two large-area, low-noise, high-speed fluorescence detectors have been built. One detector consists of a photodiode with an area of 28 mmx28 mm and a low-noise transimpedance amplifier. This detector has a input light-equivalent spectral noise density of less than 3 pW/{radical}(Hz), can recover from a large scattered light pulse within 10 {mu}s, and has a bandwidth of at least 900 kHz. The second detector consists of a 16-mm-diam avalanche photodiode and a low-noise transimpedance amplifier. This detector has an input light-equivalent spectral noise density of 0.08 pW/{radical}(Hz), also can recover from a large scattered light pulse within 10 {mu}s, andmore » has a bandwidth of 1 MHz.« less

A photon-counting photodiode array detector for far ultraviolet (FUV) astronomy

NASA Technical Reports Server (NTRS)

Hartig, G. F.; Moos, H. W.; Pembroke, R.; Bowers, C.

1982-01-01

A compact, stable, single-stage intensified photodiode array detector designed for photon-counting, far ultraviolet astronomy applications employs a saturable, 'C'-type MCP (Galileo S. MCP 25-25) to produce high gain pulses with a narrowly peaked pulse height distribution. The P-20 output phosphor exhibits a very short decay time, due to the high current density of the electron pulses. This intensifier is being coupled to a self-scanning linear photodiode array which has a fiber optic input window which allows direct, rigid mechanical coupling with minimal light loss. The array was scanned at a 250 KHz pixel rate. The detector exhibits more than adequate signal-to-noise ratio for pulse counting and event location.

Optical Demonstrations with a Scanning Photodiode Array.

ERIC Educational Resources Information Center

Turman, Bobby N.

1980-01-01

Describes the photodiode array and the electrical connections necessary for it. Also shows a few of the optical demonstration possibilities-shadowgraphs for measuring small objects, interference and diffraction effects, angular resolution of an optical system, and a simple spectrometer. (Author/DS)

High-optical-power handling InGaAs photodiodes and balanced receivers for high-spurious free dynamic range (SFDR) analog photonic links

NASA Astrophysics Data System (ADS)

Joshi, Abhay M.; Wang, Xinde; Mohr, Dan; Becker, Donald; Patil, Ravikiran

2004-08-01

We have developed 20 mA or higher photocurrent handling InGaAs photodiodes with 20 GHz bandwidth, and 10 mA or higher photocurrent handling InGaAs photodiodes with >40 GHz bandwidth. These photodiodes have been thoroughly tested for reliability including Bellcore GR 468 standard and are built to ISO 9001:2000 Quality Management System. These Dual-depletion InGaAs/InP photodiodes are surface illuminated and yet handle such large photocurrent due to advanced band-gap engineering. They have broad wavelength coverage from 800 nm to 1700 nm, and thus can be used at several wavelengths such as 850 nm, 1064 nm, 1310 nm, 1550 nm, and 1620 nm. Furthermore, they exhibit very low Polarization Dependence Loss of 0.05dB typical to 0.1dB maximum. Using above high current handling photodiodes, we have developed classical Push-Pull pair balanced photoreceivers for the 2 to 18 GHz EW system. These balanced photoreceivers boost the Spurious Free Dynamic Range (SFDR) by almost 3 dB by eliminating the laser RIN noise. Future research calls for designing an Avalanche Photodiode Balanced Pair to boost the SFDR even further by additional 3 dB. These devices are a key enabling technology in meeting the SFDR requirements for several DoD systems.

Robust snow avalanche detection using machine learning on infrasonic array data

NASA Astrophysics Data System (ADS)

Thüring, Thomas; Schoch, Marcel; van Herwijnen, Alec; Schweizer, Jürg

2014-05-01

Snow avalanches may threaten people and infrastructure in mountain areas. Automated detection of avalanche activity would be highly desirable, in particular during times of poor visibility, to improve hazard assessment, but also to monitor the effectiveness of avalanche control by explosives. In the past, a variety of remote sensing techniques and instruments for the automated detection of avalanche activity have been reported, which are based on radio waves (radar), seismic signals (geophone), optical signals (imaging sensor) or infrasonic signals (microphone). Optical imagery enables to assess avalanche activity with very high spatial resolution, however it is strongly weather dependent. Radar and geophone-based detection typically provide robust avalanche detection for all weather conditions, but are very limited in the size of the monitoring area. On the other hand, due to the long propagation distance of infrasound through air, the monitoring area of infrasonic sensors can cover a large territory using a single sensor (or an array). In addition, they are by far more cost effective than radars or optical imaging systems. Unfortunately, the reliability of infrasonic sensor systems has so far been rather low due to the strong variation of ambient noise (e.g. wind) causing a high false alarm rate. We analyzed the data collected by a low-cost infrasonic array system consisting of four sensors for the automated detection of avalanche activity at Lavin in the eastern Swiss Alps. A comparably large array aperture (~350m) allows highly accurate time delay estimations of signals which arrive at different times at the sensors, enabling precise source localization. An array of four sensors is sufficient for the time resolved source localization of signals in full 3D space, which is an excellent method to anticipate true avalanche activity. Robust avalanche detection is then achieved by using machine learning methods such as support vector machines. The system is initially trained by using characteristic data features from known avalanche and non-avalanche events. Data features are obtained from output signals of the source localization algorithm or from Fourier or time domain processing and support the learning phase of the system. A significantly improved detection rate as well as a reduction of the false alarm rate was achieved compared to previous approaches.

New silicon photodiodes for detection of the 1064nm wavelength radiation

NASA Astrophysics Data System (ADS)

Wegrzecki, Maciej; Piotrowski, Tadeusz; Puzewicz, Zbigniew; Bar, Jan; Czarnota, Ryszard; Dobrowolski, Rafal; Klimov, Andrii; Kulawik, Jan; Kłos, Helena; Marchewka, Michał; Nieprzecki, Marek; Panas, Andrzej; Seredyński, Bartłomiej; Sierakowski, Andrzej; Słysz, Wojciech; Synkiewicz, Beata; Szmigiel, Dariusz; Zaborowski, Michał

2016-12-01

In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described. Electric and photoelectric parameters of the photodiodes mentioned above are presented.

SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

NASA Technical Reports Server (NTRS)

Yan, Feng

2006-01-01

A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

16-element photodiode array for the angular microdeflection detector and for stabilization of a laser radiation direction

NASA Astrophysics Data System (ADS)

Wegrzecki, Maciej; Piotrowski, Tadeusz; Bar, Jan; Dobrowolski, Rafał; Klimov, Andrii; Klos, Helena; Marchewka, Michał; Nieprzecki, Marek; Panas, Andrzej; Prokaryn, Piotr; Seredyński, Bartłomiej; Sierakowski, Andrzej; Słysz, Wojciech; Szmigiel, Dariusz; Zaborowski, Michal

2016-12-01

In this paper, the design and technology of two types of 16-element photodiode arrays is described. The arrays were developed by the ITE and are to be used in detection of microdeflection of laser radiation at the Institute of Metrology and Biomedical Engineering in the Faculty of Mechatronics of Warsaw University of Technology. The electrical and photoelectrical parameters of the arrays are presented.

Photon counting photodiode array detector for far ultraviolet (FUV) astronomy

NASA Technical Reports Server (NTRS)

Hartig, G. F.; Moos, H. W.; Pembroke, R.; Bowers, C.

1982-01-01

A compact, stable, single-stage intensified photodiode array detector designed for photon-counting, far ultraviolet astronomy applications employs a saturable, 'C'-type MCP (Galileo S. MCP 25-25) to produce high gain pulses with a narrowly peaked pulse height distribution. The P-20 output phosphor exhibits a very short decay time, due to the high current density of the electron pulses. This intensifier is being coupled to a self-scanning linear photodiode array which has a fiber optic input window which allows direct, rigid mechanical coupling with minimal light loss. The array was scanned at a 250 KHz pixel rate. The detector exhibits more than adequate signal-to-noise ratio for pulse counting and event location. Previously announced in STAR as N82-19118

The Sensitive Infrared Signal Detection by Sum Frequency Generation

NASA Technical Reports Server (NTRS)

Wong, Teh-Hwa; Yu, Jirong; Bai, Yingxin

2013-01-01

An up-conversion device that converts 2.05-micron light to 700 nm signal by sum frequency generation using a periodically poled lithium niobate crystal is demonstrated. The achieved 92% up-conversion efficiency paves the path to detect extremely weak 2.05-micron signal with well established silicon avalanche photodiode detector for sensitive lidar applications.

Fast, Deep-Record-Length, Fiber-Coupled Photodiode Imaging Array for Plasma Diagnostics

NASA Astrophysics Data System (ADS)

Brockington, Samuel; Case, Andrew; Witherspoon, F. Douglas

2014-10-01

HyperV Technologies has been developing an imaging diagnostic comprised of an array of fast, low-cost, long-record-length, fiber-optically-coupled photodiode channels to investigate plasma dynamics and other fast, bright events. By coupling an imaging fiber bundle to a bank of amplified photodiode channels, imagers and streak imagers of 100 to 1000 pixels can be constructed. By interfacing analog photodiode systems directly to commercial analog-to-digital converters and modern memory chips, a prototype 100 pixel array with an extremely deep record length (128 k points at 20 Msamples/s) and 10 bit pixel resolution has already been achieved. HyperV now seeks to extend these techniques to construct a prototype 1000 Pixel framing camera with up to 100 Msamples/sec rate and 10 to 12 bit depth. Preliminary experimental results as well as Phase 2 plans will be discussed. Work supported by USDOE Phase 2 SBIR Grant DE-SC0009492.

Infrasonic monitoring of snow avalanches in the Alps

NASA Astrophysics Data System (ADS)

Marchetti, E.; Ulivieri, G.; Ripepe, M.; Chiambretti, I.; Segor, V.

2012-04-01

Risk assessment of snow avalanches is mostly related to weather conditions and snow cover. However a robust risk validation requires to identify all avalanches occurring, in order to compare predictions to real effects. For this purpose on December 2010 we installed a permanent 4-element, small aperture (100 m), infrasound array in the Alps, after a pilot experiment carried out in Gressonay during the 2009-2010 winter season. The array has been deployed in the Ayas Valley, at an elevation of 2000 m a.s.l., where natural avalanches are expected and controlled events are regularly performed. The array consists into 4 Optimic 2180 infrasonic microphones, with a sensitivity of 10-3 Pa in the 0.5-50 Hz frequency band and a 4 channel Guralp CMG-DM24 A/D converter, sampling at 100 Hz. Timing is achieved with a GPS receiver. Data are transmitted to the Department of Earth Sciences of the University of Firenze, where data is recorded and processed in real-time. A multi-channel semblance is carried out on the continuous data set as a function of slowness, back-azimuth and frequency of recorded infrasound in order to detect all avalanches occurring from the back-ground signal, strongly affected by microbarom and mountain induced gravity waves. This permanent installation in Italy will allow to verify the efficiency of the system in short-to-medium range (2-8 km) avalanche detection, and might represent an important validation to model avalanches activity during this winter season. Moreover, the real-time processing of infrasonic array data, might strongly contribute to avalanche risk assessments providing an up-to-description of ongoing events.

Development of solid-state avalanche amorphous selenium for medical imaging.

PubMed

Scheuermann, James R; Goldan, Amir H; Tousignant, Olivier; Léveillé, Sébastien; Zhao, Wei

2015-03-01

Active matrix flat panel imagers (AMFPI) have limited performance in low dose applications due to the electronic noise of the thin film transistor (TFT) array. A uniform layer of avalanche amorphous selenium (a-Se) called high gain avalanche rushing photoconductor (HARP) allows for signal amplification prior to readout from the TFT array, largely eliminating the effects of the electronic noise. The authors report preliminary avalanche gain measurements from the first HARP structure developed for direct deposition onto a TFT array. The HARP structure is fabricated on a glass substrate in the form of p-i-n, i.e., the electron blocking layer (p) followed by an intrinsic (i) a-Se layer and finally the hole blocking layer (n). All deposition procedures are scalable to large area detectors. Integrated charge is measured from pulsed optical excitation incident on the top electrode (as would in an indirect AMFPI) under continuous high voltage bias. Avalanche gain measurements were obtained from samples fabricated simultaneously at different locations in the evaporator to evaluate performance uniformity across large area. An avalanche gain of up to 80 was obtained, which showed field dependence consistent with previous measurements from n-i-p HARP structures established for vacuum tubes. Measurements from multiple samples demonstrate the spatial uniformity of performance using large area deposition methods. Finally, the results were highly reproducible during the time course of the entire study. We present promising avalanche gain measurement results from a novel HARP structure that can be deposited onto a TFT array. This is a crucial step toward the practical feasibility of AMFPI with avalanche gain, enabling quantum noise limited performance down to a single x-ray photon per pixel.

Ultrasonic imaging using optoelectronic transmitters.

PubMed

Emery, C D; Casey, H C; Smith, S W

1998-04-01

Conventional ultrasound scanners utilize electronic transmitters and receivers at the scanner with a separate coaxial cable connected to each transducer element in the handle. The number of transducer elements determines the size and weight of the transducer cable assembly that connects the imaging array to the scanner. 2-D arrays that allow new imaging modalities to be introduced significantly increase the channel count making the transducer cable assembly more difficult to handle. Therefore, reducing the size and increasing the flexibility of the transducer cable assembly is a concern. Fiber optics can be used to transmit signals optically and has distinct advantages over standard coaxial cable to increase flexibility and decrease the weight of the transducer cable for larger channel numbers. The use of fiber optics to connect the array and the scanner entails the use of optoelectronics such as detectors and laser diodes to send and receive signals. In transmit, optoelectronics would have to be designed to produce high-voltage wide-bandwidth pulses across the transducer element. In this paper, we describe a 48 channel ultrasound system having 16 optoelectronic transmitters and 32 conventional electronic receivers. We investigated both silicon avalanche photodiodes (APD's) and GaAs lateral photoconductive semiconductor switches (PCSS's) for producing the transmit pulses. A Siemens SI-1200 scanner and a 2.25 MHz linear array were used to compare the optoelectronic system to a conventional electronic transmit system. Transmit signal results and images in tissue mimicking of cysts and tumors are provided for comparison.

500-MHz x-ray counting with a Si-APD and a fast-pulse processing system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kishimoto, Shunji; Taniguchi, Takashi; Tanaka, Manobu

2010-06-23

We introduce a counting system of up to 500 MHz for synchrotron x-ray high-rate measurements. A silicon avalanche photodiode detector was used in the counting system. The fast-pulse circuit of the amplifier was designed with hybrid ICs to prepare an ASIC system for a large-scale pixel array detector in near future. The fast amplifier consists of two cascading emitter-followers using 10-GHz band transistors. A count-rate of 3.25x10{sup 8} s{sup -1} was then achieved using the system for 8-keV x-rays. However, a baseline shift by adopting AC-coupling in the amplifier disturbed us to observe the maximum count of 4.49x10{sup 8} s{supmore » -1}, determined by electron-bunch filling into a ring accelerator. We also report that an amplifier with a baseline restorer was tested in order to keep the baseline level to be 0 V even at high input rates.« less

Concept of a photon-counting camera based on a diffraction-addressed Gray-code mask

NASA Astrophysics Data System (ADS)

Morel, Sébastien

2004-09-01

A new concept of photon counting camera for fast and low-light-level imaging applications is introduced. The possible spectrum covered by this camera ranges from visible light to gamma rays, depending on the device used to transform an incoming photon into a burst of visible photons (photo-event spot) localized in an (x,y) image plane. It is actually an evolution of the existing "PAPA" (Precision Analog Photon Address) Camera that was designed for visible photons. This improvement comes from a simplified optics. The new camera transforms, by diffraction, each photo-event spot from an image intensifier or a scintillator into a cross-shaped pattern, which is projected onto a specific Gray code mask. The photo-event position is then extracted from the signal given by an array of avalanche photodiodes (or photomultiplier tubes, alternatively) downstream of the mask. After a detailed explanation of this camera concept that we have called "DIAMICON" (DIffraction Addressed Mask ICONographer), we briefly discuss about technical solutions to build such a camera.

An acoustic charge transport imager for high definition television applications

NASA Technical Reports Server (NTRS)

Hunt, William D.; Brennan, Kevin F.; Summers, Chris J.

1992-01-01

In this report we present the progress during the second six month period of the project. This includes both experimental and theoretical work on the acoustic charge transport (ACT) portion of the chip, the theoretical program modelling of both the avalanche photodiode (APD) and the charge transfer and overflow transistor and the materials growth and fabrication part of the program.

Laser Light Scattering, from an Advanced Technology Development Program to Experiments in a Reduced Gravity Environment

NASA Technical Reports Server (NTRS)

Meyer, William V.; Tscharnuter, Walther W.; Macgregor, Andrew D.; Dautet, Henri; Deschamps, Pierre; Boucher, Francois; Zuh, Jixiang; Tin, Padetha; Rogers, Richard B.; Ansari, Rafat R.

1994-01-01

Recent advancements in laser light scattering hardware are described. These include intelligent single card correlators; active quench/active reset avalanche photodiodes; laser diodes; and fiber optics which were used by or developed for a NASA advanced technology development program. A space shuttle experiment which will employ aspects of these hardware developments is previewed.

Recent progress in avalanche photodiodes for sensing in the IR spectrum

NASA Astrophysics Data System (ADS)

Maddox, S. J.; Ren, M.; Woodson, M. E.; Bank, S. R.; Campbell, J. C.

2016-05-01

Abstract—We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, AlxIn1-xAsySb1-y, grown lattice-matched on GaSb substrates. By varying the aluminum content the direct bandgap can be tuned from 0.25 eV (0% aluminum) to 1.24 eV (75% aluminum), corresponding to photon wavelengths from 5000 nm to 1000 nm, with the transition from direct-gap to indirect-gap occurring at ~1.18 eV (~72% aluminum), or 1050 nm. This has been used to fabricate separate absorption, charge, and multiplication (SACM) APDs using Al0.7In0.3As0.3Sb0.7 for the multiplication region and Al0.4In0.6As0.3Sb0.7 for the absorber. Gain values as high as 100 have been achieved and the excess noise factor is characterized by a k value of 0.01, which is comparable to or below that of Si. In addition, since the bandgap of the absorption region is direct, its absorption depth is 5 to 10 times shorter than indirect-bandgap silicon, potentially enabling significantly higher operating bandwidths.

Pulse oximeter using a gain-modulated avalanche photodiode operated in a pseudo lock-in light detection mode

NASA Astrophysics Data System (ADS)

Miyata, Tsuyoshi; Iwata, Tetsuo; Araki, Tsutomu

2006-01-01

We propose a reflection-type pulse oximeter, which employs two pairs of a light-emitting diode (LED) and a gated avalanche photodiode (APD). One LED is a red one with an emission wavelength λ = 635 nm and the other is a near-infrared one with that λ = 945 nm, which are both driven with a pulse mode at a frequency f (=10 kHz). Superposition of a transistor-transistor-logic (TTL) gate pulse on a direct-current (dc) bias, which is set so as not exceeding the breakdown voltage of each APD, makes the APD work in a gain-enhanced operation mode. Each APD is gated at a frequency 2f (=20 kHz) and its output signal is fed into a laboratory-made lock-in amplifier that works in synchronous with the pulse modulation signal of each LED at a frequency f (=10 kHz). A combination of the gated APD and the lock-in like signal detection scheme is useful for the reflection-type pulse oximeter thanks to the capability of detecting a weak signal against a large background (BG) light.

Effect of atmospheric turbulence on the bit error probability of a space to ground near infrared laser communications link using binary pulse position modulation and an avalanche photodiode detector

NASA Technical Reports Server (NTRS)

Safren, H. G.

1987-01-01

The effect of atmospheric turbulence on the bit error rate of a space-to-ground near infrared laser communications link is investigated, for a link using binary pulse position modulation and an avalanche photodiode detector. Formulas are presented for the mean and variance of the bit error rate as a function of signal strength. Because these formulas require numerical integration, they are of limited practical use. Approximate formulas are derived which are easy to compute and sufficiently accurate for system feasibility studies, as shown by numerical comparison with the exact formulas. A very simple formula is derived for the bit error rate as a function of signal strength, which requires only the evaluation of an error function. It is shown by numerical calculations that, for realistic values of the system parameters, the increase in the bit error rate due to turbulence does not exceed about thirty percent for signal strengths of four hundred photons per bit or less. The increase in signal strength required to maintain an error rate of one in 10 million is about one or two tenths of a db.

Optical Communication with Semiconductor Laser Diode. Interim Progress Report. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Davidson, Frederic; Sun, Xiaoli

1989-01-01

Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

Radiation detection measurements with a new ``Buried Junction'' silicon avalanche photodiode

NASA Astrophysics Data System (ADS)

Lecomte, R.; Pepin, C.; Rouleau, D.; Dautet, H.; McIntyre, R. J.; McSween, D.; Webb, P.

1999-02-01

An improved version of a recently developed "Buried Junction" avalanche photodiode (APD), designed for use with scintillators, is described and characterized. This device, also called the "Reverse APD", is designed to have a wide depletion layer and thus low capacitance, but to have high gain only for e-h pairs generated within the first few microns of the depletion layer. Thus it has high gain for light from scintillators emitting in the 400-600 nm range, with relatively low dark current noise and it is relatively insensitive to minimum ionizing particles (MIPs). An additional feature is that the metallurgical junction is at the back of the wafer, leaving the front surface free to be coupled to a scintillator without fear of junction contamination. The modifications made in this device, as compared with the earlier diode, have resulted in a lower excess noise factor, lower dark current, and much-reduced trapping. The electrical and optical characteristics of this device are described and measurements of energy and timing resolution of this device with several scintillators (BGO, LSO and GSO) of potential interest in high-energy physics and PET imaging systems are presented.

Single-photon semiconductor photodiodes for distributed optical fiber sensors: state of the art and perspectives

NASA Astrophysics Data System (ADS)

Ripamonti, Giancarlo; Lacaita, Andrea L.

1993-03-01

The extreme sensitivity and time resolution of Geiger-mode avalanche photodiodes (GM- APDs) have already been exploited for optical time domain reflectometry (OTDR). Better than 1 cm spatial resolution in Rayleigh scattering detection was demonstrated. Distributed and quasi-distributed optical fiber sensors can take advantage of the capabilities of GM-APDs. Extensive studies have recently disclosed the main characteristics and limitations of silicon devices, both commercially available and developmental. In this paper we report an analysis of the performance of these detectors. The main characteristics of GM-APDs of interest for distributed optical fiber sensors are briefly reviewed. Command electronics (active quenching) is then introduced. The detector timing performance sets the maximum spatial resolution in experiments employing OTDR techniques. We highlight that the achievable time resolution depends on the physics of the avalanche spreading over the device area. On the basis of these results, trade-off between the important parameters (quantum efficiency, time resolution, background noise, and afterpulsing effects) is considered. Finally, we show first results on Germanium devices, capable of single photon sensitivity at 1.3 and 1.5 micrometers with sub- nanosecond time resolution.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Fan; Wang, Yuanqing, E-mail: yqwang@nju.edu.cn; Li, Fenfang

The avalanche-photodiode-array (APD-array) laser detection and ranging (LADAR) system has been continually developed owing to its superiority of nonscanning, large field of view, high sensitivity, and high precision. However, how to achieve higher-efficient detection and better integration of the LADAR system for real-time three-dimensional (3D) imaging continues to be a problem. In this study, a novel LADAR system using four linear mode APDs (LmAPDs) is developed for high-efficient detection by adopting a modulation and multiplexing technique. Furthermore, an automatic control system for the array LADAR system is proposed and designed by applying the virtual instrumentation technique. The control system aimsmore » to achieve four functions: synchronization of laser emission and rotating platform, multi-channel synchronous data acquisition, real-time Ethernet upper monitoring, and real-time signal processing and 3D visualization. The structure and principle of the complete system are described in the paper. The experimental results demonstrate that the LADAR system is capable of achieving real-time 3D imaging on an omnidirectional rotating platform under the control of the virtual instrumentation system. The automatic imaging LADAR system utilized only 4 LmAPDs to achieve 256-pixel-per-frame detection with by employing 64-bit demodulator. Moreover, the lateral resolution is ∼15 cm and range accuracy is ∼4 cm root-mean-square error at a distance of ∼40 m.« less

Solid state optical microscope

DOEpatents

Young, I.T.

1983-08-09

A solid state optical microscope wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. A galvanometer scanning mirror, for scanning in one of two orthogonal directions is provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal. 2 figs.

Solid-state optical microscope

DOEpatents

Young, I.T.

1981-01-07

A solid state optical microscope is described wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. Means for scanning in one of two orthogonal directions are provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal.

Solid state optical microscope

DOEpatents

Young, Ian T.

1983-01-01

A solid state optical microscope wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. A galvanometer scanning mirror, for scanning in one of two orthogonal directions is provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal.

Solid State Research

DTIC Science & Technology

1975-04-17

1-3. CO2 laser raster scan sensitivity profile of HgCdTe quadrantal array with two of the four elements connected to 50-ohm load. Fig. 1-4...Response of HgCdTe quadrantal array to CO2 laser beam scanned across center with (a) two opposite photodiodes connected, and (b) all four photodiodes...RESEARCH 1 A. Planar HgCdTe Quadrantal Arrays for Gigahertz Heterodyne Operation at 10.6 (im 1 B. Electrical Properties of Silicon Ion-Implanted

The Trace Analysis of DEET in Water using an On-line Preconcentration Column and Liquid Chromatography with UV Photodiode Array Detection

EPA Science Inventory

A method for the detection of trace levels of N,N-diethyl-m-toluamide (DEET) in water is discussed. The method utilizes an on-line preconcentration column in series with high performance liquid chromatography (HPLC) and UV photodiode array detection. DEET, a common insect repel...

GeSn/Si Avalanche Photodetectors on Si substrates

DTIC Science & Technology

2016-09-16

of processes for different photo detectors. In-depth of study has been conducted for GeSn photo conductors and photodiodes. A summary of the...The material growth mechanism was in-depth studied; secondly, the material and optical characterizations have been conducted , including SEM, TEM, XRD...investigated. The material growth mechanism was in-depth studied; secondly, the material and optical characterizations have been conducted , including

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scheuermann, James R., E-mail: James.Scheuermann@stonybrook.edu; Goldan, Amir H.; Zhao, Wei

Purpose: Active matrix flat panel imagers (AMFPI) have limited performance in low dose applications due to the electronic noise of the thin film transistor (TFT) array. A uniform layer of avalanche amorphous selenium (a-Se) called high gain avalanche rushing photoconductor (HARP) allows for signal amplification prior to readout from the TFT array, largely eliminating the effects of the electronic noise. The authors report preliminary avalanche gain measurements from the first HARP structure developed for direct deposition onto a TFT array. Methods: The HARP structure is fabricated on a glass substrate in the form of p-i-n, i.e., the electron blocking layermore » (p) followed by an intrinsic (i) a-Se layer and finally the hole blocking layer (n). All deposition procedures are scalable to large area detectors. Integrated charge is measured from pulsed optical excitation incident on the top electrode (as would in an indirect AMFPI) under continuous high voltage bias. Avalanche gain measurements were obtained from samples fabricated simultaneously at different locations in the evaporator to evaluate performance uniformity across large area. Results: An avalanche gain of up to 80 was obtained, which showed field dependence consistent with previous measurements from n-i-p HARP structures established for vacuum tubes. Measurements from multiple samples demonstrate the spatial uniformity of performance using large area deposition methods. Finally, the results were highly reproducible during the time course of the entire study. Conclusions: We present promising avalanche gain measurement results from a novel HARP structure that can be deposited onto a TFT array. This is a crucial step toward the practical feasibility of AMFPI with avalanche gain, enabling quantum noise limited performance down to a single x-ray photon per pixel.« less

The Design of Optical Sensor for the Pinhole/Occulter Facility

NASA Technical Reports Server (NTRS)

Greene, Michael E.

1990-01-01

Three optical sight sensor systems were designed, built and tested. Two optical lines of sight sensor system are capable of measuring the absolute pointing angle to the sun. The system is for use with the Pinhole/Occulter Facility (P/OF), a solar hard x ray experiment to be flown from Space Shuttle or Space Station. The sensor consists of a pinhole camera with two pairs of perpendicularly mounted linear photodiode arrays to detect the intensity distribution of the solar image produced by the pinhole, track and hold circuitry for data reduction, an analog to digital converter, and a microcomputer. The deflection of the image center is calculated from these data using an approximation for the solar image. A second system consists of a pinhole camera with a pair of perpendicularly mounted linear photodiode arrays, amplification circuitry, threshold detection circuitry, and a microcomputer board. The deflection of the image is calculated by knowing the position of each pixel of the photodiode array and merely counting the pixel numbers until threshold is surpassed. A third optical sensor system is capable of measuring the internal vibration of the P/OF between the mask and base. The system consists of a white light source, a mirror and a pair of perpendicularly mounted linear photodiode arrays to detect the intensity distribution of the solar image produced by the mirror, amplification circuitry, threshold detection circuitry, and a microcomputer board. The deflection of the image and hence the vibration of the structure is calculated by knowing the position of each pixel of the photodiode array and merely counting the pixel numbers until threshold is surpassed.

Design and characterization of single photon avalanche diodes arrays

NASA Astrophysics Data System (ADS)

Neri, L.; Tudisco, S.; Lanzanò, L.; Musumeci, F.; Privitera, S.; Scordino, A.; Condorelli, G.; Fallica, G.; Mazzillo, M.; Sanfilippo, D.; Valvo, G.

2010-05-01

During the last years, in collaboration with ST-Microelectronics, we developed a new avalanche photo sensor, single photon avalanche diode (SPAD) see Ref.[S. Privitera, et al., Sensors 8 (2008) 4636 [1];S. Tudisco et al., IEEE Sensors Journal 8 (2008) 1324 [2

Preliminary studies of a simultaneous PET/MRI scanner based on the RatCAP small animal tomograph

NASA Astrophysics Data System (ADS)

Woody, C.; Schlyer, D.; Vaska, P.; Tomasi, D.; Solis-Najera, S.; Rooney, W.; Pratte, J.-F.; Junnarkar, S.; Stoll, S.; Master, Z.; Purschke, M.; Park, S.-J.; Southekal, S.; Kriplani, A.; Krishnamoorthy, S.; Maramraju, S.; O'Connor, P.; Radeka, V.

2007-02-01

We are developing a scanner that will allow simultaneous acquisition of high resolution anatomical data using magnetic resonance imaging (MRI) and quantitative physiological data using positron emission tomography (PET). The approach is based on the technology used for the RatCAP conscious small animal PET tomograph which utilizes block detectors consisting of pixelated arrays of LSO crystals read out with matching arrays of avalanche photodiodes and a custom-designed ASIC. The version of this detector used for simultaneous PET/MRI imaging will be constructed out of all nonmagnetic materials and will be situated inside the MRI field. We have demonstrated that the PET detector and its electronics can be operated inside the MRI, and have obtained MRI images with various detector components located inside the MRI field. The MRI images show minimal distortion in this configuration even where some components still contain traces of certain magnetic materials. We plan to improve on the image quality in the future using completely non-magnetic components and by tuning the MRI pulse sequences. The combined result will be a highly compact, low mass PET scanner that can operate inside an MRI magnet without distorting the MRI image, and can be retrofitted into existing MRI instruments.

Large format geiger-mode avalanche photodiode LADAR camera

NASA Astrophysics Data System (ADS)

Yuan, Ping; Sudharsanan, Rengarajan; Bai, Xiaogang; Labios, Eduardo; Morris, Bryan; Nicholson, John P.; Stuart, Gary M.; Danny, Harrison

2013-05-01

Recently Spectrolab has successfully demonstrated a compact 32x32 Laser Detection and Range (LADAR) camera with single photo-level sensitivity with small size, weight, and power (SWAP) budget for threedimensional (3D) topographic imaging at 1064 nm on various platforms. With 20-kHz frame rate and 500- ps timing uncertainty, this LADAR system provides coverage down to inch-level fidelity and allows for effective wide-area terrain mapping. At a 10 mph forward speed and 1000 feet above ground level (AGL), it covers 0.5 square-mile per hour with a resolution of 25 in2/pixel after data averaging. In order to increase the forward speed to fit for more platforms and survey a large area more effectively, Spectrolab is developing 32x128 Geiger-mode LADAR camera with 43 frame rate. With the increase in both frame rate and array size, the data collection rate is improved by 10 times. With a programmable bin size from 0.3 ps to 0.5 ns and 14-bit timing dynamic range, LADAR developers will have more freedom in system integration for various applications. Most of the special features of Spectrolab 32x32 LADAR camera, such as non-uniform bias correction, variable range gate width, windowing for smaller arrays, and short pixel protection, are implemented in this camera.

Fully Digital Arrays of Silicon Photomultipliers (dSiPM) - a Scalable Alternative to Vacuum Photomultiplier Tubes (PMT)

NASA Astrophysics Data System (ADS)

Haemisch, York; Frach, Thomas; Degenhardt, Carsten; Thon, Andreas

Silicon Photomultipliers (SiPMs) have emerged as promising alternative to fast vacuum photomultiplier tubes (PMT). A fully digital implementation of the Silicon Photomultiplier (dSiPM) has been developed in order to overcome the deficiencies and limitations of the so far only analog SiPMs (aSiPMs). Our sensor is based on arrays of single photon avalanche photodiodes (SPADs) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bit memory for the selective inhibit of detector cells. A balanced trigger network is used to propagate the trigger signal from all cells to the integrated time-to-digital converter. In consequence, photons are detected and counted as digital signals, thus making the sensor less susceptible to temperature variations and electronic noise. The integration with CMOS logic provides the added benefit of low power consumption and possible integration of data post-processing directly in the sensor. In this overview paper, we discuss the sensor architecture together with its characteristics with a focus on scalability and practicability aspects for applications in medical imaging, high energy- and astrophysics.

High-performance silicon nanowire bipolar phototransistors

NASA Astrophysics Data System (ADS)

Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

2016-07-01

Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

Modelisation de photodetecteurs a base de matrices de diodes avalanche monophotoniques pour tomographie d'emission par positrons

NASA Astrophysics Data System (ADS)

Corbeil Therrien, Audrey

La tomographie d'emission par positrons (TEP) est un outil precieux en recherche preclinique et pour le diagnostic medical. Cette technique permet d'obtenir une image quantitative de fonctions metaboliques specifiques par la detection de photons d'annihilation. La detection des ces photons se fait a l'aide de deux composantes. D'abord, un scintillateur convertit l'energie du photon 511 keV en photons du spectre visible. Ensuite, un photodetecteur convertit l'energie lumineuse en signal electrique. Recemment, les photodiodes avalanche monophotoniques (PAMP) disposees en matrice suscitent beaucoup d'interet pour la TEP. Ces matrices forment des detecteurs sensibles, robustes, compacts et avec une resolution en temps hors pair. Ces qualites en font un photodetecteur prometteur pour la TEP, mais il faut optimiser les parametres de la matrice et de l'electronique de lecture afin d'atteindre les performances optimales pour la TEP. L'optimisation de la matrice devient rapidement une operation difficile, car les differents parametres interagissent de maniere complexe avec les processus d'avalanche et de generation de bruit. Enfin, l'electronique de lecture pour les matrices de PAMP demeure encore rudimentaire et il serait profitable d'analyser differentes strategies de lecture. Pour repondre a cette question, la solution la plus economique est d'utiliser un simulateur pour converger vers la configuration donnant les meilleures performances. Les travaux de ce memoire presentent le developpement d'un tel simulateur. Celui-ci modelise le comportement d'une matrice de PAMP en se basant sur les equations de physique des semiconducteurs et des modeles probabilistes. Il inclut les trois principales sources de bruit, soit le bruit thermique, les declenchements intempestifs correles et la diaphonie optique. Le simulateur permet aussi de tester et de comparer de nouvelles approches pour l'electronique de lecture plus adaptees a ce type de detecteur. Au final, le simulateur vise a quantifier l'impact des parametres du photodetecteur sur la resolution en energie et la resolution en temps et ainsi optimiser les performances de la matrice de PAMP. Par exemple, l'augmentation du ratio de surface active ameliore les performances, mais seulement jusqu'a un certain point. D'autres phenomenes lies a la surface active, comme le bruit thermique, provoquent une degradation du resultat. Le simulateur nous permet de trouver un compromis entre ces deux extremes. Les simulations avec les parametres initiaux demontrent une efficacite de detection de 16,7 %, une resolution en energie de 14,2 % LMH et une resolution en temps de 0.478 ns LMH. Enfin, le simulateur propose, bien qu'il vise une application en TEP, peut etre adapte pour d'autres applications en modifiant la source de photons et en adaptant les objectifs de performances. Mots-cles : Photodetecteurs, photodiodes avalanche monophotoniques, semiconducteurs, tomographie d'emission par positrons, simulations, modelisation, detection monophotonique, scintillateurs, circuit d'etouffement, SPAD, SiPM, Photodiodes avalanche operees en mode Geiger

A fast and compact electromagnetic calorimeter for the PANDA detector at FAIR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilms, Andrea

2005-10-26

In this presentation we report on the electromagnetic calorimeter of the 4{pi} detector PANDA to be installed at the antiproton storage ring of the proposed Facility for Antiproton and Ion Research (FAIR). We present details of the R and D work with two scintillator materials, PbWO4 (PWO) and BGO, and the new developed large area avalanche photodiodes (LAAPDs) as detector readout.

The beam test of muon detector parameters for the SHiP experiment at CERN

NASA Astrophysics Data System (ADS)

Likhacheva, V. L.; Kudenko, Yu. G.; Mefodiev, A. V.; Mineev, O. V.; Khotyantsev, A. N.

2018-01-01

Scintillation detectors based on extruded plastics have been tested in a 10 GeV/c beam at CERN. The scintillation signal readout was provided using optical wavelength shifting fibers Y11 Kuraray and Hamamatsu MPPC micropixel avalanche photodiodes. The light yield was scanned along and across the detectors. Time resolution was found by fitting the MPPC digitized pulse rise and other methods.

Channel Modelling and Performance of Non-Line-of-Sight Ultraviolet Scattering Communications

DTIC Science & Technology

2012-01-01

Avalanche photodiode (APD) detectors are also rapidly being developed [6, 7]. These device advances have inspired recent research in LED-based short...response and path loss results for outdoor NLOS UV communication channels in Section 3. The impulse response modelling describes UV pulse broadening via...Both the impulse response and path loss are critical to communication system design and performance assessment. Although pulse broadening creates inter

Single photon counting linear mode avalanche photodiode technologies

NASA Astrophysics Data System (ADS)

Williams, George M.; Huntington, Andrew S.

2011-10-01

The false count rate of a single-photon-sensitive photoreceiver consisting of a high-gain, low-excess-noise linear-mode InGaAs avalanche photodiode (APD) and a high-bandwidth transimpedance amplifier (TIA) is fit to a statistical model. The peak height distribution of the APD's multiplied dark current is approximated by the weighted sum of McIntyre distributions, each characterizing dark current generated at a different location within the APD's junction. The peak height distribution approximated in this way is convolved with a Gaussian distribution representing the input-referred noise of the TIA to generate the statistical distribution of the uncorrelated sum. The cumulative distribution function (CDF) representing count probability as a function of detection threshold is computed, and the CDF model fit to empirical false count data. It is found that only k=0 McIntyre distributions fit the empirically measured CDF at high detection threshold, and that false count rate drops faster than photon count rate as detection threshold is raised. Once fit to empirical false count data, the model predicts the improvement of the false count rate to be expected from reductions in TIA noise and APD dark current. Improvement by at least three orders of magnitude is thought feasible with further manufacturing development and a capacitive-feedback TIA (CTIA).

Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes

NASA Astrophysics Data System (ADS)

Lyu, Yuexi; Han, Xi; Sun, Yaoyao; Jiang, Zhi; Guo, Chunyan; Xiang, Wei; Dong, Yinan; Cui, Jie; Yao, Yuan; Jiang, Dongwei; Wang, Guowei; Xu, Yingqiang; Niu, Zhichuan

2018-01-01

We report on the growth of high quality GaSb-based AlInAsSb quaternary alloy by molecular beam epitaxy (MBE) to fabricate avalanche photodiodes (APDs). By means of high resolution X-ray diffraction (HRXRD) and scanning transmission electron microscope (STEM), phase separation phenomenon of AlInAsSb random alloy with naturally occurring vertical superlattice configuration was demonstrated. To overcome the tendency for phase segregation while maintaining a highly crystalline film, a digital alloy technique with migration-enhanced epitaxy growth method was employed, using a shutter sequence of AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb. AlInAsSb digital alloy has proved to be reproducible and consistent with single phase, showing sharp satellite peaks on HRXRD rocking curve and smooth surface morphology under atomic force microscopy (AFM). Using optimized digital alloy, AlInAsSb separate absorption, grading, charge, and multiplication (SAGCM) APD was grown and fabricated. At room temperature, the device showed high performance with low dark current density of ∼14.1 mA/cm2 at 95% breakdown and maximum stable gain before breakdown as high as ∼200, showing the potential for further applications in optoelectronic devices.

Characterization of Advanced Avalanche Photodiodes for Water Vapor Lidar Receivers

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Halama, Gary E.; DeYoung, Russell J.

2000-01-01

Development of advanced differential absorption lidar (DIAL) receivers is very important to increase the accuracy of atmospheric water vapor measurements. A major component of such receivers is the optical detector. In the near-infrared wavelength range avalanche photodiodes (APD's) are the best choice for higher signal-to-noise ratio, where there are many water vapor absorption lines. In this study, characterization experiments were performed to evaluate a group of silicon-based APD's. The APD's have different structures representative of different manufacturers. The experiments include setups to calibrate these devices, as well as characterization of the effects of voltage bias and temperature on the responsivity, surface scans, noise measurements, and frequency response measurements. For each experiment, the setup, procedure, data analysis, and results are given and discussed. This research was done to choose a suitable APD detector for the development of an advanced atmospheric water vapor differential absorption lidar detection system operating either at 720, 820, or 940 nm. The results point out the benefits of using the super low ionization ratio (SLIK) structure APD for its lower noise-equivalent power, which was found to be on the order of 2 to 4 fW/Hz(sup (1/2)), with an appropriate optical system and electronics. The water vapor detection systems signal-to-noise ratio will increase by a factor of 10.

Multiple-Event, Single-Photon Counting Imaging Sensor

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Position sensitive solid-state photomultipliers, systems and methods

DOEpatents

Shah, Kanai S; Christian, James; Stapels, Christopher; Dokhale, Purushottam; McClish, Mickel

2014-11-11

An integrated silicon solid state photomultiplier (SSPM) device includes a pixel unit including an array of more than 2.times.2 p-n photodiodes on a common substrate, a signal division network electrically connected to each photodiode, where the signal division network includes four output connections, a signal output measurement unit, a processing unit configured to identify the photodiode generating a signal or a center of mass of photodiodes generating a signal, and a global receiving unit.

High-performance liquid chromatographic peak identification of 2,4-dinitrophenylhydrazine derivatives of lipid peroxidation aldehydes by photodiode array detection.

PubMed

Cordis, G A; Das, D K; Riedel, W

1998-03-06

Malonaldehyde (MDA), a product of lipid peroxidation, is a presumptive marker for the development of oxidative stress in tissues and plasmas. In this study we report the photodiode array detection of the 2,4-dinitrophenylhydrazine (DNPH) derivatives of MDA using HPLC. Oxidative stress was produced by injecting (i.p.) bacterial lipopolysaccharide (LPS) into rats at a dose of 100 micrograms/kg, or i.v. into rabbits (1 microgram/kg), or added to freshly drawn human blood (200 ng/ml). Blood was collected at several time points up to 5 h, centrifuged, and equal volumes of 20% TCA were used to precipitate proteins from the plasma. The supernatants were derivatized with DNPH, and the aldehyde-DNPHs were extracted with pentane. After evaporation, aliquots of 10 microliters in acetonitrile were injected onto a Beckman Ultrasphere C18 (3 microns) column, chromatographed with an acetonitrile-water-acetic acid gradient mobile phase and scanned using Waters 996 photodiode array detector. Peak identification and homogeneity was determined by comparing the experimental peaks and UV scans with those of authentic standards. A significant increase in the DNPH derivative of malonaldehyde (MDA-DNPH), but not of the other aldehyde-DNPH derivatives of formaldehyde (FDA), acetaldehyde (ADA), acetone and propionaldehyde (PDA) was seen over the first hour after LPS administration in anesthetized rats, while in conscious rabbits this trend lasted up to 3 h. The retention times as well as the UV scans of the derivatized aldehydes matched the authentic standards. Thus, photodiode array detection has proved valuable in establishing this HPLC method for estimating oxidative stress. This technique could accurately measure pmol amounts of MDA-DNPH indicating the usefulness of photodiode array detection method for estimating small changes in the oxidative stress.

Early Holocene (8.6 ka) rock avalanche deposits, Obernberg valley (Eastern Alps): Landform interpretation and kinematics of rapid mass movement.

PubMed

Ostermann, Marc; Sanders, Diethard; Ivy-Ochs, Susan; Alfimov, Vasily; Rockenschaub, Manfred; Römer, Alexander

2012-10-15

In the Obernberg valley, the Eastern Alps, landforms recently interpreted as moraines are re-interpreted as rock avalanche deposits. The catastrophic slope failure involved an initial rock volume of about 45 million m³, with a runout of 7.2 km over a total vertical distance of 1330 m (fahrböschung 10°). 36 Cl surface-exposure dating of boulders of the avalanche mass indicates an event age of 8.6 ± 0.6 ka. A 14 C age of 7785 ± 190 cal yr BP of a palaeosoil within an alluvial fan downlapping the rock avalanche is consistent with the event age. The distal 2 km of the rock-avalanche deposit is characterized by a highly regular array of transverse ridges that were previously interpreted as terminal moraines of Late-Glacial. 'Jigsaw-puzzle structure' of gravel to boulder-size clasts in the ridges and a matrix of cataclastic gouge indicate a rock avalanche origin. For a wide altitude range the avalanche deposit is preserved, and the event age of mass-wasting precludes both runout over glacial ice and subsequent glacial overprint. The regularly arrayed transverse ridges thus were formed during freezing of the rock avalanche deposits.

Application of a silicon photodiode array for solar edge tracking in the Halogen Occultation Experiment

NASA Technical Reports Server (NTRS)

Mauldin, L. E., III; Moore, A. S.; Stump, C. S.; Mayo, L. S.

1985-01-01

The optical and electronic design of the Halogen Occultation Experiment (HALOE) elevation sunsensor is described. This system uses a Galilean telescope to form a solar image on a linear silicon photodiode array. The array is a self-scanned, monolithic charge coupled device. The addresses of both solar edges imaged on the array are used by the control/pointing system to scan the HALOE science instantaneous-field-of-view (IFOV) across the vertical solar diameter during instrument calibration, and then maintain the science IFOV four arcmin below the top edge during the science data occultation event. Vertical resolution of 16 arcsec and a radiometric dynamic range of 100 are achieved at the 0.7 micrometer operating wavelength. The design provides for loss of individual photodiode elements without loss of angular tracking capability. The HALOE instrument is a gas correlation radiometer that is now being developed by NASA Langley Research Center for the Upper Atmospheric Research Satellite.

InGaAs Avalanche Photodetectors

NASA Astrophysics Data System (ADS)

Stillman, G. E.; Cook, L. W.; Tashima, M. M.; Tabatabaie, N.

1981-07-01

The development of optical fibers with extremely low loss and near zero pulse dispersion in the 1.30-1.55 pm spectral range has generated considerable interest in emitters and detectors for use in optical fiber communication systems utilizing these wavelengths. The InGaAsP quaternary alloy, lattice matched to InP, is one of at least three different semi-conductor alloys being evaluated for detector applications in these systems. In this paper we will review some of the previous results obtained in InGaAsP/InP photodetectors, and discuss the possible mechanisms responsible for the large dark current observed in some of these devices. The material properties and device structures which minimize the dark current are described, and the possibilities of achieving efficient avalanche photodiodes using these materials are evaluated.

Fill-factor improvement of Si CMOS single-photon avalanche diode detector arrays by integration of diffractive microlens arrays.

PubMed

Intermite, Giuseppe; McCarthy, Aongus; Warburton, Ryan E; Ren, Ximing; Villa, Federica; Lussana, Rudi; Waddie, Andrew J; Taghizadeh, Mohammad R; Tosi, Alberto; Zappa, Franco; Buller, Gerald S

2015-12-28

Single-photon avalanche diode (SPAD) detector arrays generally suffer from having a low fill-factor, in which the photo-sensitive area of each pixel is small compared to the overall area of the pixel. This paper describes the integration of different configurations of high efficiency diffractive optical microlens arrays onto a 32 × 32 SPAD array, fabricated using a 0.35 µm CMOS technology process. The characterization of SPAD arrays with integrated microlens arrays is reported over the spectral range of 500-900 nm, and a range of f-numbers from f/2 to f/22. We report an average concentration factor of 15 measured for the entire SPAD array with integrated microlens array. The integrated SPAD and microlens array demonstrated a very high uniformity in overall efficiency.

Receiver design, performance analysis, and evaluation for space-borne laser altimeters and space-to-space laser ranging systems

NASA Technical Reports Server (NTRS)

Davidson, Frederic M.; Sun, Xiaoli; Field, Christopher T.

1994-01-01

This interim report consists of two reports: 'Space Radiation Effects on Si APDs for GLAS' and 'Computer Simulation of Avalanche Photodiode and Preamplifier Output for Laser Altimeters.' The former contains a detailed description of our proton radiation test of Si APD's performed at the Brookhaven National Laboratory. The latter documents the computer program subroutines which were written for the upgrade of NASA's GLAS simulator.

1.06 Micrometer Avalanche Photodiode Detector

DTIC Science & Technology

1977-04-01

for Gigabit Nd-YAG Laser Communication ............. 30 2.1.6 Influence of Modulator Extinction Ration on Communication Performance with Different...GAASFET Preamps ............ 157 4.2.1.1 Circuit Description for GAASFET Preamps #4 and #5 157 4.2.1.2 Performance Results for GAASFET Preamp #5...163 4.2.1.3 Performance Results for GAASFET Preamp #4 ...... 169 4.2.2 Results for Mark II GAASFET Preamp ............. 173 4.2.2.1 Circuit Description

Low-SWAP Lidar Instrument for Arctic Ice Sheet Mass Balance Monitoring Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, George; Barsic, David

To meet the need to obtain statistically significant data in the North Slope of Alaska (NSA) in support of climate models, Voxtel is developing an nmanned-aircraft-system (UAS)-optimized lidar focal plane array (FPA) and lidar instrument design that integrates the most recent developments in optics, electronics, and computing. Bound by the size, weight, and power (SWAP) budget of low altitude/long endurance (LALE) small UAS (SUAS) platforms—a design tradeoff study was conducted. The class of SUAS considered typically: operates at altitudes between 150 meters and 2,000 meters; accommodates payloads weighing less than 5 kg; encompasses no more than 4,000 cm3 of space;more » and consumes no more than 50 watts of power. To address the SWAP constraints, a lowpower standalone strap-down (gimbal-less) lidar was developed based on single-photon-counting silicon avalanche photodiodes. To reduce SWAP, a lidar FPA design capable of simultaneous imaging and lidar was developed. The 532-nm-optimized FPA modular design was developed for easy integration, as a lidar payload, in any of a variety of SUAS platforms.« less

Integrated fiber optical receiver reducing the gap to the quantum limit.

PubMed

Zimmermann, Horst; Steindl, Bernhard; Hofbauer, Michael; Enne, Reinhard

2017-06-01

Experimental results of a single-photon avalanche diode (SPAD) based optical fiber receiver integrated in 0.35 µm PIN-photodiode CMOS technology are presented. To cope with the parasitic effects of SPADs an array of four receivers is implemented. The SPADs consist of a multiplication zone and a separate thick absorption zone to achieve a high photon detection probability (PDP). In addition cascoded quenchers allow to use a quenching voltage of twice the usual supply voltage, i.e. 6.6 V instead of 3.3 V, in order to increase the PDP further. Measurements result in sensitivities of -55.7 dBm at a data rate of 50 Mbit/s and -51.6 dBm at 100 Mbit/s for a wavelength of 635 nm and a bit-error ratio of 2 × 10 -3 , which is sufficient to perform error correction. These sensitivities are better than those of linear-mode APD receivers integrated in the same CMOS technology. These results are a major advance towards direct detection optical receivers working close to the quantum limit.

High-performance MCT and QWIP IR detectors at Sofradir

NASA Astrophysics Data System (ADS)

Reibel, Yann; Rubaldo, Laurent; Manissadjian, Alain; Billon-Lanfrey, David; Rothman, Johan; de Borniol, Eric; Destéfanis, Gérard; Costard, E.

2012-11-01

Cooled IR technologies are challenged for answering new system needs like compactness and reduction of cryo-power which is key feature for the SWaP (Size, Weight and Power) requirements. This paper describes the status of MCT IR technology in France at Leti and Sofradir. A focus will be made on hot detector technology for SWAP applications. Sofradir has improved its HgCdTe technology to open the way for High Operating Temperature systems that release the Stirling cooler engine power consumption. Solutions for high performance detectors such as dual bands, much smaller pixel pitch or megapixels will also be discussed. In the meantime, the development of avalanche photodiodes or TV format with digital interface is key to bringing customers cutting-edge functionalities. Since 1997, Sofradir has been working with Thales and Research Technologies (TRT) to develop and produce Quantum Well Infrared Photodetectors (QWIP) as a complementary offer with MCT, to provide large LW staring arrays. A dualband MW-LW QWIP detector (25μm pitch 384×288 IDDCA) is currently under development. We will present in this paper its latest results.

Vertical-cavity surface-emitting laser sources for gigahertz-bandwidth, multiwavelength frequency-domain photon migration

NASA Astrophysics Data System (ADS)

O'Sullivan, Thomas D.; No, Keunsik; Matlock, Alex; Warren, Robert V.; Hill, Brian; Cerussi, Albert E.; Tromberg, Bruce J.

2017-10-01

Frequency-domain photon migration (FDPM) uses modulated laser light to measure the bulk optical properties of turbid media and is increasingly applied for noninvasive functional medical imaging in the near-infrared. Although semiconductor edge-emitting laser diodes have been traditionally used as miniature light sources for this application, we show that vertical-cavity surface-emitting lasers (VCSELs) exhibit output power and modulation performance characteristics suitable for FDPM measurements of tissue optical properties at modulation frequencies exceeding 1 GHz. We also show that an array of multiple VCSEL devices can be coherently modulated at frequencies suitable for FDPM and can improve optical power. In addition, their small size and simple packaging make them an attractive choice as components in wearable sensors and clinical FDPM-based optical spectroscopy systems. We demonstrate the benefits of VCSEL technology by fabricating and testing a unique, compact VCSEL-based optical probe with an integrated avalanche photodiode. We demonstrate sensitivity of the VCSEL-based probe to subcutaneous tissue hemodynamics that was induced during an arterial cuff occlusion of the upper arm in a human subject.

WIYN tip-tilt module performance

NASA Astrophysics Data System (ADS)

Claver, Charles F.; Corson, Charles; Gomez, R. Richard, Jr.; Daly, Philip N.; Dryden, David M.; Abareshi, Behzod

2003-02-01

The WIYN Tip-Tilt Module (WTTM) is an addition to the existing Instrument Adapter System (IAS) providing a high performance optical-NIR image stabilized port on the WIYN 3.5m telescope. The WTTM optical system uses a 3-mirror off-axis design along with a high bandwidth tilt mirror. The WTTM is a reimaging system with 15% magnification producing a 4x4 arcminute field of view and near diffraction limited imagery from 400-2000nm. The optics are diamond turned in electroless Nickel over an Aluminum substrate. The WTTM opto-mechanical assembly was designed and built using the principals of the "build-to-print" technique, where the entire system is fabricated and assembled to tolerance with no adjustments. A unique high performance error sensor, using an internal mirrorlette array that feeds 4 fiber coupled avalanche photodiode photon counters, provides the tilt signal. The system runs under the Real-Time Linux operating system providing a maximum closed loop rate of 3khz. In this paper we report on the successful lab testing, verification of the "build-to-print" technique and on telescope performance of the WTTM.

Temporal intensity interferometry: photon bunching in three bright stars

NASA Astrophysics Data System (ADS)

Guerin, W.; Dussaux, A.; Fouché, M.; Labeyrie, G.; Rivet, J.-P.; Vernet, D.; Vakili, F.; Kaiser, R.

2017-12-01

We report the first intensity correlation measured with starlight since the historical experiments of Hanbury Brown and Twiss. The photon bunching g(2)(τ, r = 0), obtained in the photon-counting regime, was measured for three bright stars: α Boo, α CMi and β Gem. The light was collected at the focal plane of a 1-m optical telescope, transported by a multi-mode optical fibre, split into two avalanche photodiodes and correlated digitally in real time. For total exposure times of a few hours, we obtained contrast values around 2 × 10-3, in agreement with the expectation for chaotic sources, given the optical and electronic bandwidths of our set-up. Comparing our results with the measurement of Hanbury Brown et al. for α CMi, we argue for the timely opportunity to extend our experiments to measuring the spatial correlation function over existing and/or foreseen arrays of optical telescopes diluted over several kilometres. This would enable microarcsec long-baseline interferometry in the optical, especially in the visible wavelengths, with a limiting magnitude of 10.

A 10MHz Fiber-Coupled Photodiode Imaging Array for Plasma Diagnostics

NASA Astrophysics Data System (ADS)

Brockington, Samuel; Case, Andrew; Witherspoon, F. Douglas

2013-10-01

HyperV Technologies has been developing an imaging diagnostic comprised of arrays of fast, low-cost, long-record-length, fiber-optically-coupled photodiode channels to investigate plasma dynamics and other fast, bright events. By coupling an imaging fiber bundle to a bank of amplified photodiode channels, imagers and streak imagers of 100 to 10,000 pixels can be constructed. By interfacing analog photodiode systems directly to commercial analog to digital convertors and modern memory chips, a prototype pixel with an extremely deep record length (128 k points at 40 Msamples/s) has been achieved for a 10 bit resolution system with signal bandwidths of at least 10 MHz. Progress on a prototype 100 Pixel streak camera employing this technique is discussed along with preliminary experimental results and plans for a 10,000 pixel imager. Work supported by USDOE Phase 1 SBIR Grant DE-SC0009492.

Fast, Deep-Record-Length, Fiber-Coupled Photodiode Imaging Array for Plasma Diagnostics

NASA Astrophysics Data System (ADS)

Brockington, Samuel; Case, Andrew; Witherspoon, F. Douglas

2015-11-01

HyperV Technologies has been developing an imaging diagnostic comprised of an array of fast, low-cost, long-record-length, fiber-optically-coupled photodiode channels to investigate plasma dynamics and other fast, bright events. By coupling an imaging fiber bundle to a bank of amplified photodiode channels, imagers and streak imagers can be constructed. By interfacing analog photodiode systems directly to commercial analog-to-digital converters and modern memory chips, a scalable solution for 100 to 1000 pixel systems with 14 bit resolution and record-lengths of 128k frames has been developed. HyperV is applying these techniques to construct a prototype 1000 Pixel framing camera with up to 100 Msamples/sec rate and 10 to 14 bit depth. Preliminary experimental results as well as future plans will be discussed. Work supported by USDOE Phase 2 SBIR Grant DE-SC0009492.

Direction-Sensitive Hand-Held Gamma-Ray Spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukhopadhyay, S.

2012-10-04

A novel, light-weight, hand-held gamma-ray detector with directional sensitivity is being designed. The detector uses a set of multiple rings around two cylindrical surfaces, which provides precise location of two interaction points on two concentric cylindrical planes, wherefrom the source location can be traced back by back projection and/or Compton imaging technique. The detectors are 2.0 × 2.0 mm europium-doped strontium iodide (SrI2:Eu2+) crystals, whose light output has been measured to exceed 120,000 photons/MeV, making it one of the brightest scintillators in existence. The crystal’s energy resolution, less than 3% at 662 keV, is also excellent, and the response ismore » highly linear over a wide range of gamma-ray energies. The emission of SrI2:Eu2+ is well matched to both photo-multiplier tubes and blue-enhanced silicon photodiodes. The solid-state photomultipliers used in this design (each 2.0 × 2.0 mm) are arrays of active pixel sensors (avalanche photodiodes driven beyond their breakdown voltage in reverse bias); each pixel acts as a binary photon detector, and their summed output is an analog representation of the total photon energy, while the individual pixel accurately defines the point of interaction. A simple back-projection algorithm involving cone-surface mapping is being modeled. The back projection for an event cone is a conical surface defining the possible location of the source. The cone axis is the straight line passing through the first and second interaction points.« less

Photodiode design study. Final report, May--December 1977

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamorte, M.F.

1977-12-01

The purpose of this work was to apply the analytical method developed for single junction and multijunction solar cells, Contract No. F33615-76-C-1283, to photodiodes and avalanche photodiodes. It was anticipated that this analytical method will advance the state-of-the-art because of the following: (1) the analysis considers the total photodetector multilayer structure rather than just the depleted region; (2) a model of the complete band structure is analyzed; (3) application of the integral form of the continuity equation is used; (4) structures that reduce dark current and/or increase the ratio of photocurrent to dark current are obtained; and (5) structures thatmore » increase spectral response in the depleted region and reduce response in other regions of the diode are obtained. The integral form of the continuity equation developed for solar cells is the steady-state or time-independent form. The contract specified that the time-independent equation would only be employed to determine applicability to photodetectors. The GaAsSb photodiode under development at Rockwell International, Thousand Oaks, California was used to determine the applicability to photodetectors. The diode structure is composed of four layers grown on a substrate. The analysis presents calculations of spectral response. This parameter is used in this study to optimize the structure.« less

Early Holocene (8.6 ka) rock avalanche deposits, Obernberg valley (Eastern Alps): Landform interpretation and kinematics of rapid mass movement

PubMed Central

Ostermann, Marc; Sanders, Diethard; Ivy-Ochs, Susan; Alfimov, Vasily; Rockenschaub, Manfred; Römer, Alexander

2012-01-01

In the Obernberg valley, the Eastern Alps, landforms recently interpreted as moraines are re-interpreted as rock avalanche deposits. The catastrophic slope failure involved an initial rock volume of about 45 million m³, with a runout of 7.2 km over a total vertical distance of 1330 m (fahrböschung 10°). 36Cl surface-exposure dating of boulders of the avalanche mass indicates an event age of 8.6 ± 0.6 ka. A 14C age of 7785 ± 190 cal yr BP of a palaeosoil within an alluvial fan downlapping the rock avalanche is consistent with the event age. The distal 2 km of the rock-avalanche deposit is characterized by a highly regular array of transverse ridges that were previously interpreted as terminal moraines of Late-Glacial. ‘Jigsaw-puzzle structure’ of gravel to boulder-size clasts in the ridges and a matrix of cataclastic gouge indicate a rock avalanche origin. For a wide altitude range the avalanche deposit is preserved, and the event age of mass-wasting precludes both runout over glacial ice and subsequent glacial overprint. The regularly arrayed transverse ridges thus were formed during freezing of the rock avalanche deposits. PMID:24966447

Optical Reflectance Measurements for Commonly Used Reflectors

NASA Astrophysics Data System (ADS)

Janecek, Martin; Moses, William W.

2008-08-01

When simulating light collection in scintillators, modeling the angular distribution of optical light reflectance from surfaces is very important. Since light reflectance is poorly understood, either purely specular or purely diffuse reflectance is generally assumed. In this paper we measure the optical reflectance distribution for eleven commonly used reflectors. A 440 nm, output power stabilized, un-polarized laser is shone onto a reflector at a fixed angle of incidence. The reflected light's angular distribution is measured by an array of silicon photodiodes. The photodiodes are movable to cover 2pi of solid angle. The light-induced current is, through a multiplexer, read out with a digital multimeter. A LabVIEW program controls the motion of the laser and the photodiode array, the multiplexer, and the data collection. The laser can be positioned at any angle with a position accuracy of 10 arc minutes. Each photodiode subtends 6.3deg, and the photodiode array can be positioned at any angle with up to 10 arc minute angular resolution. The dynamic range for the current measurements is 10 5:1. The measured light reflectance distribution was measured to be specular for several ESR films as well as for aluminum foil, mostly diffuse for polytetrafluoroethylene (PTFE) tape and titanium dioxide paint, and neither specular nor diffuse for Lumirrorreg, Melinexreg and Tyvekreg. Instead, a more complicated light distribution was measured for these three materials.

A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

NASA Astrophysics Data System (ADS)

Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

2009-05-01

Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.

Monolithic optical link in silicon-on-insulator CMOS technology.

PubMed

Dutta, Satadal; Agarwal, Vishal; Hueting, Raymond J E; Schmitz, Jurriaan; Annema, Anne-Johan

2017-03-06

This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n⁺p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.

The 1.06 optical receiver. [avalanche photodiodes for laser range finders

NASA Technical Reports Server (NTRS)

Tomasetta, L. R.; Law, H. D.; Nakano, K.; Scholl, F. W.; Harris, J. S., Jr.

1978-01-01

High performance 1.06 micron m avalanche photodetectors (APDs), fabricated in the GaAlSb system, have high quantum efficiency (90 percent), high speed (risetime less than 60 ps) and low leakage currents (less than 50 na). The dark current represents more than an order of magnitude reduction compared to previously reported results. The high speed avalanche gain of these devices is between 20 and 50. The area uniformity is better than + or - 10 percent. GaAlAs APDs at 0.53 micron m have even faster speed, lower dark currents, and high speed gains of 100 to 200. Optical rangefinders based on measured APD performance parameters have far superior performance when compared to even ideal photomultiplier tubes in either a one color or two color rangefinder system. For a one color system, f factor of two lower time jitter can be achieved with identical transmitted power. The superiority of the APD based two color receiver is significant and exists in the entire range of desired time jitters (less than 100 ps) and received power levels.

Temporal dependence of transient dark counts in an avalanche photodiode: A solution for power-law behavior of afterpulsing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akiba, M., E-mail: akiba@nict.go.jp; Tsujino, K.

This paper offers a theoretical explanation of the temperature and temporal dependencies of transient dark count rates (DCRs) measured for a linear-mode silicon avalanche photodiode (APD) and the dependencies of afterpulsing that were measured in Geiger-mode Si and InGaAs/InP APDs. The temporal dependencies exhibit power-law behavior, at least to some extent. For the transient DCR, the value of the DCR for a given time period increases with decreases in temperature, while the power-law behavior remains unchanged. The transient DCR is attributed to electron emissions from traps in the multiplication layer of the APD with a high electric field, and itsmore » temporal dependence is explained by a continuous change in the electron emission rate as a function of the electric field strength. The electron emission rate is calculated using a quantum model for phonon-assisted tunnel emission. We applied the theory to the temporal dependence of afterpulsing that was measured for Si and InGaAs/InP APDs. The power-law temporal dependence is attributed to the power-law function of the electron emission rate from the traps as a function of their position across the p–n junction of the APD. Deviations from the power-law temporal dependence can be derived from the upper and lower limits of the electric field strength.« less

Avalanche photodiode for measurement of low-energy electrons

NASA Astrophysics Data System (ADS)

Ogasawara, K.; Asamura, K.; Mukai, T.; Saito, Y.

2005-06-01

We report on the performance of an Avalanche Photodiode (APD) produced by Hamamatsu Photonics Co. Ltd. (Type Z7966-20) for measurements of low energy electrons. We have set up an electron gun, which can generate a 1-20 keV electron beam impinging onto the APD in a vacuum chamber. The result shows that the pulse height distribution (PHD) of the APD signal exhibits a significant peak for electrons with energies above 8 keV, and the variation of the PHD peak shows a good linearity with the energy of incident electrons. The energy resolution is quite good, though it slightly depends on the electron energy. In the case of low-energies (lower than 10 keV), the pulse height distribution has a characteristic tail on the low energy side, and the energy resolution becomes a little worse. The position of the peak appears on a slightly lower channel than is expected from data at higher energies (near 20 keV). Qualitatively, the low-energy tail is caused by the dead-layer on the surface of the device. The nonlinearity and the worse resolution of the peaks for higher energy electrons may have resulted from a space-charge effect due to created e-h pairs. For a quantitative understanding, we have made a Monte Carlo particle simulation of charge transport and collection inside the APD.

Ultra-violet avalanche photodiode based on AlN/GaN periodically-stacked-structure

NASA Astrophysics Data System (ADS)

Wu, Xingzhao; Zheng, Jiyuan; Wang, Lai; Brault, Julien; Matta, Samuel; Hao, Zhibiao; Sun, Changzheng; Xiong, Bing; Luo, Yi; Han, Yianjun; Wang, Jian; Li, Hongtao; Khalfioui, Mohamed A.; Li, Mo; Kang, Jianbin; Li, Qian

2018-02-01

The high-gain photomultiplier tube (PMT) is the most popular method to detect weak ultra-violet signals which attenuate quickly in atmosphere, although the vacuum tube makes it fragile and difficult to integrate. To overcome the disadvantage of PMT, an AlN/GaN periodically-stacked-structure (PSS) avalanche photodiode (APD) has been proposed, finally achieving good quality of high gain and low excessive noise. As there is a deep g valley only in the conduction band of both GaN and AlN, the electron transfers suffering less scattering and thus becomes easier to obtain the threshold of ionization impact. Because of unipolar ionization in the PSS APD, it works in linear mode. Four prototype devices of 5-period, 10-period, 15-period, and 20-period were fabricated to verify that the gain of APD increases exponentially with period number. And in 20-period device, a recorded high and stable gain of 104 was achieved under constant bias. In addition, it is proved both experimentally and theoretically, that temperature stability on gain is significantly improved in PSS APD. And it is found that the resonant enhancement in interfacial ionization may bring significant enhancement of electron ionization performance. To make further progress in PSS APD, the device structure is investigated by simulation. Both the gain and temperature stability are optimized alternatively by a proper design of periodical thickness and AlN layer occupancy.

Thematic mapper critical elements breadboard program

NASA Technical Reports Server (NTRS)

Dale, C. H., Jr.; Engel, J. L.; Harney, E. D.

1976-01-01

A 40.6 cm bidirectional scan mirror assembly, a scan line corrector and a silicon photodiode array with integral preamplifier input stages were designed, fabricated, and tested to demonstrate performance consistent with requirements of the Hughes thematic mapper system. The measured performance met or exceeded the original design goals in all cases with the qualification that well defined and well understood deficiencies in the design of the photodiode array package will require the prescribed corrections before flight use.

An acoustic charge transport imager for high definition television applications

NASA Technical Reports Server (NTRS)

Hunt, W. D.; Brennan, K. F.; Summers, C. J.

1994-01-01

The primary goal of this research is to develop a solid-state television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels/frame. This imager will offer an order of magnitude improvements in speed over CCD designs and will allow for monolithic imagers operating from the IR to UV. The technical approach of the project focuses on the development of the three basic components of the imager and their subsequent integration. The camera chip can be divided into three distinct functions: (1) image capture via an array of avalanche photodiodes (APD's); (2) charge collection, storage, and overflow control via a charge transfer transistor device (CTD); and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the optimization of each of these component devices. In addition to the development of each of the three distinct components, work towards their integration and manufacturability is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail.

Development and verification of signal processing system of avalanche photo diode for the active shields onboard ASTRO-H

NASA Astrophysics Data System (ADS)

Ohno, M.; Kawano, T.; Edahiro, I.; Shirakawa, H.; Ohashi, N.; Okada, C.; Habata, S.; Katsuta, J.; Tanaka, Y.; Takahashi, H.; Mizuno, T.; Fukazawa, Y.; Murakami, H.; Kobayashi, S.; Miyake, K.; Ono, K.; Kato, Y.; Furuta, Y.; Murota, Y.; Okuda, K.; Wada, Y.; Nakazawa, K.; Mimura, T.; Kataoka, J.; Ichinohe, Y.; Uchida, Y.; Katsuragawa, M.; Yoneda, H.; Sato, G.; Sato, R.; Kawaharada, M.; Harayama, A.; Odaka, H.; Hayashi, K.; Ohta, M.; Watanabe, S.; Kokubun, M.; Takahashi, T.; Takeda, S.; Kinoshita, M.; Yamaoka, K.; Tajima, H.; Yatsu, Y.; Uchiyama, H.; Saito, S.; Yuasa, T.; Makishima, K.; ASTRO-H HXI/SGD Team

2016-09-01

The hard X-ray Imager and Soft Gamma-ray Detector onboard ASTRO-H demonstrate high sensitivity to hard X-ray (5-80 keV) and soft gamma-rays (60-600 keV), respectively. To reduce the background, both instruments are actively shielded by large, thick Bismuth Germanate scintillators. We have developed the signal processing system of the avalanche photodiode in the BGO active shields and have demonstrated its effectiveness after assembly in the flight model of the HXI/SGD sensor and after integration into the satellite. The energy threshold achieved is about 150 keV and anti-coincidence efficiency for cosmic-ray events is almost 100%. Installed in the BGO active shield, the developed signal processing system successfully reduces the room background level of the main detector.

Low dose digital X-ray imaging with avalanche amorphous selenium

NASA Astrophysics Data System (ADS)

Scheuermann, James R.; Goldan, Amir H.; Tousignant, Olivier; Léveillé, Sébastien; Zhao, Wei

2015-03-01

Active Matrix Flat Panel Imagers (AMFPI) based on an array of thin film transistors (TFT) have become the dominant technology for digital x-ray imaging. In low dose applications, the performance of both direct and indirect conversion detectors are limited by the electronic noise associated with the TFT array. New concepts of direct and indirect detectors have been proposed using avalanche amorphous selenium (a-Se), referred to as high gain avalanche rushing photoconductor (HARP). The indirect detector utilizes a planar layer of HARP to detect light from an x-ray scintillator and amplify the photogenerated charge. The direct detector utilizes separate interaction (non-avalanche) and amplification (avalanche) regions within the a-Se to achieve depth-independent signal gain. Both detectors require the development of large area, solid state HARP. We have previously reported the first avalanche gain in a-Se with deposition techniques scalable to large area detectors. The goal of the present work is to demonstrate the feasibility of large area HARP fabrication in an a-Se deposition facility established for commercial large area AMFPI. We also examine the effect of alternative pixel electrode materials on avalanche gain. The results show that avalanche gain > 50 is achievable in the HARP layers developed in large area coaters, which is sufficient to achieve x-ray quantum noise limited performance down to a single x-ray photon per pixel. Both chromium (Cr) and indium tin oxide (ITO) have been successfully tested as pixel electrodes.

Hard-X-Ray/Soft-Gamma-Ray Imaging Sensor Assembly for Astronomy

NASA Technical Reports Server (NTRS)

Myers, Richard A.

2008-01-01

An improved sensor assembly has been developed for astronomical imaging at photon energies ranging from 1 to 100 keV. The assembly includes a thallium-doped cesium iodide scintillator divided into pixels and coupled to an array of high-gain avalanche photodiodes (APDs). Optionally, the array of APDs can be operated without the scintillator to detect photons at energies below 15 keV. The array of APDs is connected to compact electronic readout circuitry that includes, among other things, 64 independent channels for detection of photons in various energy ranges, up to a maximum energy of 100 keV, at a count rate up to 3 kHz. The readout signals are digitized and processed by imaging software that performs "on-the-fly" analysis. The sensor assembly has been integrated into an imaging spectrometer, along with a pair of coded apertures (Fresnel zone plates) that are used in conjunction with the pixel layout to implement a shadow-masking technique to obtain relatively high spatial resolution without having to use extremely small pixels. Angular resolutions of about 20 arc-seconds have been measured. Thus, for example, the imaging spectrometer can be used to (1) determine both the energy spectrum of a distant x-ray source and the angular deviation of the source from the nominal line of sight of an x-ray telescope in which the spectrometer is mounted or (2) study the spatial and temporal development of solar flares, repeating - ray bursters, and other phenomena that emit transient radiation in the hard-x-ray/soft- -ray region of the electromagnetic spectrum.

High Accuracy Verification of a Correlated-Photon-Based Method for Determining Photon-Counting Detection Efficiency

DTIC Science & Technology

2007-01-01

Metrology; (270.5290) Photon statistics. References and links 1. W. H. Louisell, A. Yariv, and A. E. Siegman , “Quantum Fluctuations and Noise in...939–941 (1981). 7. S. R. Bowman, Y. H. Shih, and C. O. Alley, “The use of Geiger mode avalanche photodiodes for precise laser ranging at very low...light levels: An experimental evaluation”, in Laser Radar Technology and Applications I, James M. Cruickshank, Robert C. Harney eds., Proc. SPIE 663

Recent improvements of the JET lithium beam diagnostica)

NASA Astrophysics Data System (ADS)

Brix, M.; Dodt, D.; Dunai, D.; Lupelli, I.; Marsen, S.; Melson, T. F.; Meszaros, B.; Morgan, P.; Petravich, G.; Refy, D. I.; Silva, C.; Stamp, M.; Szabolics, T.; Zastrow, K.-D.; Zoletnik, S.; JET-EFDA Contributors

2012-10-01

A 60 kV neutral lithium diagnostic beam probes the edge plasma of JET for the measurement of electron density profiles. This paper describes recent enhancements of the diagnostic setup, new procedures for calibration and protection measures for the lithium ion gun during massive gas puffs for disruption mitigation. New light splitting optics allow in parallel beam emission measurements with a new double entrance slit CCD spectrometer (spectrally resolved) and a new interference filter avalanche photodiode camera (fast density and fluctuation studies).

Evolution of Trace Gases and Particles Emitted by a Chaparral Fire in California

DTIC Science & Technology

2012-02-07

length of 78 m and was then focused onto an MCT detector . The cell exchange time was about ten seconds when the flow con- trol valves were open and IR...through a 1064 nm Nd:YAG laser cavity where light scattered by the particles was measured by two avalanche photodiode detectors . Sufficiently light...collected with higher signal-to- noise . Smoke samples collected more than 1.8 km from the source showed signs of aging (O3 for- mation) and were not

Generation of High Purity Photon-Pair in a Short Highly Non-Linear Fiber

DTIC Science & Technology

2013-01-01

Avalanche photodiode. A 10 m long HNLF fabricated by Sumitomo with a core diameter of 4 microns is fusion spliced to a single mode fiber for a...parametric down conversion (SPDC) was first observed in χ(2) nonlinear crystal [3]. However, the compatibility of a nonlinear crystal source with fiber and...PAIR IN A SHORT HIGHLY NON-LINEAR FIBER 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA8750-12-1-0136 5c. PROGRAM ELEMENT NUMBER N/A 6. AUTHOR(S

High sensitivity 1.06 micron optical receiver for precision laser range finding. [YAG laser design

NASA Technical Reports Server (NTRS)

Scholl, F. W.; Harris, J. S., Jr.

1977-01-01

Aluminum gallium antimonide avalanche photodiodes with average gain of 10, internal quantum efficiency of greater than 60%, capacitance less than 0.2pf, and dark current of less than 1 micron were designed and fabricated for use in a low noise optical receiver suitable for 2 cm accuracy rangefinding. Topics covered include: (1) design of suitable photodetector structures; (2) epitaxial growth of AlGaSb devices; (3) fabrication of photodetectors; and (4) electro-optics characterization.

Decoding mobile-phone image sensor rolling shutter effect for visible light communications

NASA Astrophysics Data System (ADS)

Liu, Yang

2016-01-01

Optical wireless communication (OWC) using visible lights, also known as visible light communication (VLC), has attracted significant attention recently. As the traditional OWC and VLC receivers (Rxs) are based on PIN photo-diode or avalanche photo-diode, deploying the complementary metal-oxide-semiconductor (CMOS) image sensor as the VLC Rx is attractive since nowadays nearly every person has a smart phone with embedded CMOS image sensor. However, deploying the CMOS image sensor as the VLC Rx is challenging. In this work, we propose and demonstrate two simple contrast ratio (CR) enhancement schemes to improve the contrast of the rolling shutter pattern. Then we describe their processing algorithms one by one. The experimental results show that both the proposed CR enhancement schemes can significantly mitigate the high-intensity fluctuations of the rolling shutter pattern and improve the bit-error-rate performance.

Development of a novel combined fluorescence and reflectance spectroscopy system for guiding high-grade glioma resections: confirmation of capability in lab experiments

NASA Astrophysics Data System (ADS)

Mousavi, Monirehalsadat; Xie, Haiyan; Xie, Zhiyuan; Brydegaard, Mikkel; Axelsson, Johan; Andersson-Engels, Stefan

2013-11-01

Total resection of glioblastoma multiform (GBM), the most common and aggressive malignant brain tumor, is challenging among other things due to difficulty in intraoperative discrimination between normal and residual tumor cells. This project demonstrates the potential of a system based on a combination of autofluorescence and diffuse reflectance spectroscopy to be useful as an intraoperative guiding tool. In this context, a system based on 5 LEDs coupled to optical fibers was employed to deliver UV/visible light to the sample sequentially. Remitted light from the tissue; including diffuse reflected and fluorescence of endogenous and exogenous fluorophores, as well as its photobleaching product, is transmitted to one photodiode and four avalanche photodiodes. This instrument has been evaluated with very promising results by performing various tissue-equivalent phantom laboratory and clinical studies on skin lesions.

High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping

DOE PAGES

Xia, Zhenyang; Zang, Kai; Liu, Dong; ...

2017-08-21

Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping profile and electric field in the top nanometer range of the photo detection devices become critical. Traditional UV photodetectors usually use a constant doping profile near the semiconductor surface, resulting in a negligible electric field, which limits the photo-generated carrier collection efficiency of the photodetector. Here, we demonstrate, via the use of an optimized gradient boron doping technique, that the carrier collection efficiency and photo responsivity under the UV wavelength region have been enhanced. Moreover,more » the ultrathin p+-i-n junction shows an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad), indicating potential applications in the low timing jitter single photon detection area.« less

High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, Zhenyang; Zang, Kai; Liu, Dong

Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping profile and electric field in the top nanometer range of the photo detection devices become critical. Traditional UV photodetectors usually use a constant doping profile near the semiconductor surface, resulting in a negligible electric field, which limits the photo-generated carrier collection efficiency of the photodetector. Here, we demonstrate, via the use of an optimized gradient boron doping technique, that the carrier collection efficiency and photo responsivity under the UV wavelength region have been enhanced. Moreover,more » the ultrathin p+-i-n junction shows an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad), indicating potential applications in the low timing jitter single photon detection area.« less

Determination of nitroaromatic explosives and their degradation products in unsaturated-zone water samples by high-performance liquid chromatography with photodiode-array, mass spectrometric, and tandem mass spectrometric detection

USGS Publications Warehouse

Gates, Paul M.; Furlong, E.T.; Dorsey, T.F.; Burkhardt, M.R.

1996-01-01

Mass spectrometry and tandem mass spectrometry, coupled by a thermospray interface to a high-performance liguid chromatography system and equipped with a photodiode array detector, were used to determine the presence of nitroaromatic explosives and their degradation products in USA unsaturated-zone water samples. Using this approach, the lower limits of quantitation for explosives determined by mass spectrometry in this study typically ranged from 10 to 100 ng/l.

Large-Format AlGaN PIN Photodiode Arrays for UV Images

NASA Technical Reports Server (NTRS)

Aslam, Shahid; Franz, David

2010-01-01

A large-format hybridized AlGaN photodiode array with an adjustable bandwidth features stray-light control, ultralow dark-current noise to reduce cooling requirements, and much higher radiation tolerance than previous technologies. This technology reduces the size, mass, power, and cost of future ultraviolet (UV) detection instruments by using lightweight, low-voltage AlGaN detectors in a hybrid detector/multiplexer configuration. The solar-blind feature eliminates the need for additional visible light rejection and reduces the sensitivity of the system to stray light that can contaminate observations.

Development of a photodiode array biochip using a bipolar semiconductor and its application to detection of human papilloma virus.

PubMed

Baek, Taek Jin; Park, Pan Yun; Han, Kwi Nam; Kwon, Ho Taik; Seong, Gi Hun

2008-03-01

We describe a DNA microarray system using a bipolar integrated circuit photodiode array (PDA) chip as a new platform for DNA analysis. The PDA chip comprises an 8 x 6 array of photodiodes each with a diameter of 600 microm. Each photodiode element acts both as a support for an immobilizing probe DNA and as a two-dimensional photodetector. The usefulness of the PDA microarray platform is demonstrated by the detection of high-risk subtypes of human papilloma virus (HPV). The polymerase chain reaction (PCR)-amplified biotinylated HPV target DNA was hybridized with the immobilized probe DNA on the photodiode surface, and the chip was incubated in an anti-biotin antibody-conjugated gold nanoparticle solution. The silver enhancement by the gold nanoparticles bound to the biotin of the HPV target DNA precipitates silver metal particles at the chip surfaces, which block light irradiated from above. The resulting drop in output voltage depends on the amount of target DNA present in the sample solution, which allows the specific detection and the quantitative analysis of the complementary target DNA. The PDA chip showed high relative signal ratios of HPV probe DNA hybridized with complementary target DNA, indicating an excellent capability in discriminating HPV subtypes. The detection limit for the HPV target DNA analysis improved from 1.2 nM to 30 pM by changing the silver development time from 5 to 10 min. Moreover, the enhanced silver development promoted by the gold nanoparticles could be applied to a broader range of target DNA concentration by controlling the silver development time.

Photodetector development at Fraunhofer IAF: From LWIR to SWIR operating from cryogenic close to room temperature

NASA Astrophysics Data System (ADS)

Daumer, V.; Gramich, V.; Müller, R.; Schmidt, J.; Rutz, F.; Stadelmann, T.; Wörl, A.; Rehm, R.

2017-02-01

Photodetectors in the non-visible region of the electromagnetic spectrum are essential for security, defense and space science as well as industrial and scientific applications. The research activities at Fraunhofer IAF cover a broad range in the infrared (IR) regime. Whereas short-wavelength IR (SWIR, <1.7 μm) detectors are realized by InGaAs/InP structures, InAs/GaSb type-II superlattice (T2SL) infrared detectors are developed for the spectral bands from mid- (MWIR, 3-5 μm) to long-wavelength IR (LWIR, 8-12 μm). We report on the extension of the superlattice empirical pseudopotential method (SEPM) to 300 K for the design of LWIR heterostructures for operation near room temperature. Recently, we have also adapted heterostructure concepts to our well established bi-spectral T2SL MWIR detector resulting in a dark current density below 2 × 10-9 A/cm2 for a cut-off wavelength close to 5 μm. Finally, we present first results obtained with a gated viewing system based on our InGaAs/InAlAs/InP avalanche photodiode arrays.

Development of brain PET using GAPD arrays.

PubMed

Jung, Jin Ho; Choi, Yong; Hong, Key Jo; Kang, Jihoon; Hu, Wei; Lim, Hyun Keong; Huh, Yoonsuk; Kim, Sangsu; Jung, Jiwoong; Kim, Kyu Bom

2012-03-01

In recent times, there has been great interest in the use of Geiger-mode avalanche photodiodes (GAPDs) as scintillator readout in positron emission tomography (PET) detectors because of their advantages, such as high gain, compact size, low power consumption, and magnetic field insensitivity. The purpose of this study was to develop a novel PET system based on GAPD arrays for brain imaging. The PET consisted of 72 detector modules arranged in a ring of 330 mm diameter. Each PET module was composed of a 4 × 4 matrix of 3 × 3 × 20 mm(3) cerium-doped lutetium yttrium orthosilicate (LYSO) crystals coupled with a 4 × 4 array three-side tileable GAPD. The signals from each PET module were fed into preamplifiers using a 3 m long flat cable and then sent to a position decoder circuit (PDC), which output a digital address and an analog pulse of the interacted channel among 64 preamplifier signals transmitted from four PET detector modules. The PDC outputs were fed into field programmable gate array (FPGA)-embedded data acquisition (DAQ) boards. The analog signal was then digitized, and arrival time and energy of the signal were calculated and stored. The energy and coincidence timing resolutions measured for 511 keV gamma rays were 18.4 ± 3.1% and 2.6 ns, respectively. The transaxial spatial resolution and sensitivity in the center of field of view (FOV) were 3.1 mm and 0.32% cps/Bq, respectively. The rods down to a diameter of 2.5 mm were resolved in a hot-rod phantom image, and activity distribution patterns between the white and gray matters in the Hoffman brain phantom were well imaged. Experimental results indicate that a PET system can be developed using GAPD arrays and the GAPD-based PET system can provide high-quality PET imaging.

Progress in low light-level InAs detectors- towards Geiger-mode detection

NASA Astrophysics Data System (ADS)

Tan, Chee Hing; Ng, Jo Shien; Zhou, Xinxin; David, John; Zhang, Shiyong; Krysa, Andrey

2017-05-01

InAs avalanche photodiodes (APDs) can be designed such that only electrons are allowed to initiate impact ionization, leading to the lowest possible excess noise factor. Optimization of wet chemical etching and surface passivation produced mesa APDs with bulk dominated dark current and responsivity that are comparable and higher, respectively, than a commercial InAs detector. Our InAs electron-APDs also show high stability with fluctuation of 0.1% when operated at a gain of 11.2 over 60 s. These InAs APDs can detect very weak signal down to 35 photons per pulse. Fabrication of planar InAs by Be implantation produced planar APDs with bulk dominated dark current. Annealing at 550 °C was necessary to remove implantation damage and to activate Be dopants. Due to minimal diffusion of Be, thick depletion of 8 μm was achieved. Since the avalanche gain increases exponentially with the thickness of avalanche region, our planar APD achieved high gain > 300 at 200 K. Our work suggest that both mesa and planar InAs APDs can exhibit high gain. When combined with a suitable preamplifier, single photon detection using InAs electron-APDs could be achieved.

Timing resolution and time walk in super low K factor single-photon avalanche diode-measurement and optimization

NASA Astrophysics Data System (ADS)

Fong, Bernicy S.; Davies, Murray; Deschamps, Pierre

2018-01-01

Timing resolution (or timing jitter) and time walk are separate parameters associated with a detector's response time. Studies have been done mostly on the time resolution of various single-photon detectors. As the designer and manufacturer of the ultra-low noise (ƙ-factor) silicon avalanche photodiode the super low K factor (SLiK) single-photon avalanche diode (SPAD), which is used in many single-photon counting applications, we often get inquiries from customers to better understand how this detector behaves under different operating conditions. Hence, here, we will be focusing on the study of these time-related parameters specifically for the SLiK SPAD, as a way to provide the most direct information for users of this detector to help with its use more efficiently and effectively. We will be providing the study data on how these parameters can be affected by temperature (both intrinsic to the detector chip and environmental input based on operating conditions), operating voltage, photon wavelength, as well as light spot size. How these parameters can be optimized and the trade-offs from optimization from the desired performance will be presented?

Effects of reflector and crystal surface on the performance of a depth-encoding PET detector with dual-ended readout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Silin; Yang, Yongfeng, E-mail: yfyang@ucdavis.edu; Cherry, Simon R.

Purpose: Depth encoding detectors are required to improve the spatial resolution and spatial resolution uniformity of small animal positron emission tomography (PET) scanners, as well as dedicated breast and brain scanners. Depth of interaction (DOI) can be measured by using dual-ended readout of lutetium oxyorthosilicate (LSO) scintillator arrays with position-sensitive avalanche photodiodes. Inter-crystal reflectors and crystal surface treatments play important roles in determining the performance of dual-ended detectors. In this paper, the authors evaluated five LSO arrays made with three different intercrystal reflectors and with either polished or unpolished crystal surfaces. Methods: The crystal size in all arrays was 1.5more » mm, which is typical of the detector size used in small animal and dedicated breast scanners. The LSO arrays were measured with dual-ended readout and were compared in terms of flood histogram, energy resolution, and DOI resolution performance. Results: The four arrays using enhanced specular reflector (ESR) and Toray reflector provided similar quality flood histograms and the array using Crystal Wrap reflector gave the worst flood histogram. The two arrays using ESR reflector provided the best energy resolution and the array using Crystal Wrap reflector yielded the worst energy resolution. All arrays except the polished ESR array provided good DOI resolution ranging from 1.9 mm to 2.9 mm. DOI resolution improved as the gradient in light collection efficiency with depth (GLCED) increased. The geometric mean energies were also calculated for these dual-ended readout detectors as an alternative to the conventional summed total energy. It was shown that the geometric mean energy is advantageous in that it provides more uniform photopeak amplitude at different depths for arrays with high GLCED, and is beneficial in event selection by allowing a fixed energy window independent of depth. A new method of DOI calculation that improved the linearity of DOI ratio vs depth and simplifies the DOI calibration procedure also was developed and tested. Conclusions: The results of these studies provide useful guidance in selecting the proper reflectors and crystal surface treatments when LSO arrays are used for high-resolution PET applications in small animal scanners or dedicated breast and brain scanners.« less

An acoustic charge transport imager for high definition television applications

NASA Technical Reports Server (NTRS)

Hunt, W. D.; Brennan, Kevin F.

1994-01-01

The primary goal of this research is to develop a solid-state high definition television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels per frame. This imager offers an order of magnitude improvement in speed over CCD designs and will allow for monolithic imagers operating from the IR to the UV. The technical approach of the project focuses on the development of the three basic components of the imager and their integration. The imager chip can be divided into three distinct components: (1) image capture via an array of avalanche photodiodes (APD's), (2) charge collection, storage and overflow control via a charge transfer transistor device (CTD), and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the development of manufacturable designs for each of these component devices. In addition to the development of each of the three distinct components, work towards their integration is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail in Sections 2-4.

Sci-Sat AM(1): Imaging-08: Small animal APD PET detector with submillimetric resolution for molecular imaging.

PubMed

Bérard, P; Bergeron, M; Pepin, C M; Cadorette, J; Tétrault, M-A; Viscogliosi, N; Fontaine, R; Dautet, H; Davies, M; Lecomte, R

2008-07-01

Visualization and quantification of biological processes in mice, the preferred animal model in most preclinical studies, require the best possible spatial resolution in positron emission tomography (PET). A new 64-channel avalanche photodiode (APD) detector module was developed to achieve submillimeter spatial resolution for this purpose. The module consists of dual 4 × 8 APD arrays mounted in a custom ceramic holder. Individual APD pixels having an active area of 1.1 × 1.1 mm2 at a 1.2 mm pitch can be fitted to an 8 × 8 LYSO scintillator block designed to accommodate one-to-one coupling. An analog test board with four 16-channel preamplifier ASICs was designed to be interfaced with the existing LabPET digital processing electronics. At a standard APD operating bias, a mean energy resolution of 27.5 ± 0.6% was typically obtained at 511 keV with a relative standard deviation of 13.8% in signal amplitude for the 64 individual pixels. Crosstalk between pixels was found to be well below the typical lower energy threshold used for PET imaging applications. With two modules in coincidence, a global timing resolution of 5.0 ns FWHM was measured. Finally, an intrinsic spatial resolution of 0.8 mm FWHM was measured by sweeping a 22Na point source between two detector arrays. The proposed detector module demonstrates promising characteristics for dedicated mouse PET imaging at submillimiter resolution. © 2008 American Association of Physicists in Medicine.

Strain effects in Hg/sub 1-//sub x/Cd/sub x/Te (xapprox. 0. 2) photovoltaic arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiss, E.; Mainzer, N.

1989-03-01

The effect of stress and strain on the performance of Hg/sub 1-//sub x/Cd/sub x/Te (xapprox.0.2) photovoltaic arrays was studied both in the dark and under illumination. Stress, external as well as internal, affects the current--voltage characteristic of the photodiode. The combined action of illumination and strain yields an anomalous response to light absorption in the device. A model is conceived wherein the photodiode and guard ring are treated as a metal-insulator semiconductor field effect transistor (MISFET). Stress developed in the vicinity of small contact windows causes n-type damage, which brings about a forward bias in the device. The effect ofmore » strain on the reverse current of the photodiode is explained by a change in the n-channel conductivity of the MISFET. This change is caused by charges which are due either to a piezoelectric effect or n-type damage. Using this model observed phenomena in Hg/sub 1-//sub x/Cd/sub x/Te photovoltaic arrays are explained, as due to internal stresses originating from wafer deformation.« less

Gamma-insensitive optical sensor

DOEpatents

Kruger, Hans W.

1994-01-01

An ultra-violet/visible/infra-red gamma-insensitive gas avalanche focal plane array comprising a planar photocathode and a planar anode pad array separated by a gas-filled gap and across which is applied an electric potential. Electrons ejected from the photocathode are accelerated sufficiently between collisions with the gas molecules to ionize them, forming an electron avalanche. The gap acts like a proportional counter. The array of anode pad are mounted on the front of an anode plate and are connected to matching contact pads on the back of the anode via feed through wires. Connection of the anode to signal processing electronics is made from the contact pads using standard indium bump techniques, for example.

Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scarcella, Carmelo; Tosi, Alberto, E-mail: alberto.tosi@polimi.it; Villa, Federica

2013-12-15

We developed a single-photon counting multichannel detection system, based on a monolithic linear array of 32 CMOS SPADs (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diodes). All channels achieve a timing resolution of 100 ps (full-width at half maximum) and a photon detection efficiency of 50% at 400 nm. Dark count rate is very low even at room temperature, being about 125 counts/s for 50 μm active area diameter SPADs. Detection performance and microelectronic compactness of this CMOS SPAD array make it the best candidate for ultra-compact time-resolved spectrometers with single-photon sensitivity from 300 nm to 900 nm.

Radiation-Resistant Photon-Counting Detector Package Providing Sub-ps Stability for Laser Time Transfer in Space

NASA Technical Reports Server (NTRS)

Prochzaka, Ivan; Kodat, Jan; Blazej, Josef; Sun, Xiaoli (Editor)

2015-01-01

We are reporting on a design, construction and performance of photon-counting detector packages based on silicon avalanche photodiodes. These photon-counting devices have been optimized for extremely high stability of their detection delay. The detectors have been designed for future applications in fundamental metrology and optical time transfer in space. The detectors have been qualified for operation in space missions. The exceptional radiation tolerance of the detection chip itself and of all critical components of a detector package has been verified in a series of experiments.

Apparatus for time-resolved and energy-resolved measurement of internal conversion electron emission induced by nuclear resonant excitation with synchrotron radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawauchi, Taizo; Matsumoto, Masuaki; Fukutani, Katsuyuki

2007-01-15

A high-energy and large-object-spot type cylindrical mirror analyzer (CMA) was constructed with the aid of electron trajectory simulations. By adopting a particular shape for the outer cylinder, an energy resolution of 7% was achieved without guide rings as used in conventional CMAs. Combined with an avalanche photodiode as an electron detector, the K-shell internal conversion electrons were successfully measured under irradiation of synchrotron radiation at 14.4 keV in an energy-resolved and time-resolved manner.

AGARD Conference Proceedings on Guidance and Control of Precision Guided Weapons Held in Geilo, Norway from 3-6 May 1988

DTIC Science & Technology

1989-01-11

EFFECT OF BANK-TO-TURN VERSUS SKID-TO-TURN STEERING ON THE MANOEUVRABILITY OF AUTONOMOUS PRECISION GUIDED MUUNITION AGAINST GROUND TARGETS by B.J.Damen...space. Basic Relationships of an Interferometer Gyro The Sagnac effect in the fiber optic gyro causes a phase shift in the sensor col during rotation with... a read-out coupler and an.avalanche photodiode for optical detection. The opto module is rigidly connected with the sensor module via a fiber link

Direct measurement of fast transients by using boot-strapped waveform averaging

NASA Astrophysics Data System (ADS)

Olsson, Mattias; Edman, Fredrik; Karki, Khadga Jung

2018-03-01

An approximation to coherent sampling, also known as boot-strapped waveform averaging, is presented. The method uses digital cavities to determine the condition for coherent sampling. It can be used to increase the effective sampling rate of a repetitive signal and the signal to noise ratio simultaneously. The method is demonstrated by using it to directly measure the fluorescence lifetime from Rhodamine 6G by digitizing the signal from a fast avalanche photodiode. The obtained lifetime of 4.0 ns is in agreement with the known values.

Local Sampling of the Wigner Function at Telecom Wavelength with Loss-Tolerant Detection of Photon Statistics.

PubMed

Harder, G; Silberhorn, Ch; Rehacek, J; Hradil, Z; Motka, L; Stoklasa, B; Sánchez-Soto, L L

2016-04-01

We report the experimental point-by-point sampling of the Wigner function for nonclassical states created in an ultrafast pulsed type-II parametric down-conversion source. We use a loss-tolerant time-multiplexed detector based on a fiber-optical setup and a pair of photon-number-resolving avalanche photodiodes. By capitalizing on an expedient data-pattern tomography, we assess the properties of the light states with outstanding accuracy. The method allows us to reliably infer the squeezing of genuine two-mode states without any phase reference.

A linear photodiode array employed in a short range laser triangulation obstacle avoidance sensor. M.S. Thesis; [Martian roving vehicle sensor

NASA Technical Reports Server (NTRS)

Odenthal, J. P.

1980-01-01

An opto-electronic receiver incorporating a multi-element linear photodiode array as a component of a laser-triangulation rangefinder was developed as an obstacle avoidance sensor for a Martian roving vehicle. The detector can resolve the angle of laser return in 1.5 deg increments within a field of view of 30 deg and a range of five meters. A second receiver with a 1024 elements over 60 deg and a 3 meter range is also documented. Design criteria, circuit operation, schematics, experimental results and calibration procedures are discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riot, Vincent J.

The present disclosure provides a system and a method for measuring fluorescence of a sample. The sample may be a polymerase-chain-reaction (PCR) array, a loop-mediated-isothermal amplification array, etc. LEDs are used to excite the sample, and a photodiode is used to collect the sample's fluorescence. An electronic offset signal is used to reduce the effects of background fluorescence and the noises from the measurement system. An integrator integrates the difference between the output of the photodiode and the electronic offset signal over a given period of time. The resulting integral is then converted into digital domain for further processing andmore » storage.« less

An investigation of signal performance enhancements achieved through innovative pixel design across several generations of indirect detection, active matrix, flat-panel arrays

PubMed Central

Antonuk, Larry E.; Zhao, Qihua; El-Mohri, Youcef; Du, Hong; Wang, Yi; Street, Robert A.; Ho, Jackson; Weisfield, Richard; Yao, William

2009-01-01

Active matrix flat-panel imager (AMFPI) technology is being employed for an increasing variety of imaging applications. An important element in the adoption of this technology has been significant ongoing improvements in optical signal collection achieved through innovations in indirect detection array pixel design. Such improvements have a particularly beneficial effect on performance in applications involving low exposures and∕or high spatial frequencies, where detective quantum efficiency is strongly reduced due to the relatively high level of additive electronic noise compared to signal levels of AMFPI devices. In this article, an examination of various signal properties, as determined through measurements and calculations related to novel array designs, is reported in the context of the evolution of AMFPI pixel design. For these studies, dark, optical, and radiation signal measurements were performed on prototype imagers incorporating a variety of increasingly sophisticated array designs, with pixel pitches ranging from 75 to 127 μm. For each design, detailed measurements of fundamental pixel-level properties conducted under radiographic and fluoroscopic operating conditions are reported and the results are compared. A series of 127 μm pitch arrays employing discrete photodiodes culminated in a novel design providing an optical fill factor of ∼80% (thereby assuring improved x-ray sensitivity), and demonstrating low dark current, very low charge trapping and charge release, and a large range of linear signal response. In two of the designs having 75 and 90 μm pitches, a novel continuous photodiode structure was found to provide fill factors that approach the theoretical maximum of 100%. Both sets of novel designs achieved large fill factors by employing architectures in which some, or all of the photodiode structure was elevated above the plane of the pixel addressing transistor. Generally, enhancement of the fill factor in either discrete or continuous photodiode arrays was observed to result in no degradation in MTF due to charge sharing between pixels. While the continuous designs exhibited relatively high levels of charge trapping and release, as well as shorter ranges of linearity, it is possible that these behaviors can be addressed through further refinements to pixel design. Both the continuous and the most recent discrete photodiode designs accommodate more sophisticated pixel circuitry than is present on conventional AMFPIs – such as a pixel clamp circuit, which is demonstrated to limit signal saturation under conditions corresponding to high exposures. It is anticipated that photodiode structures such as the ones reported in this study will enable the development of even more complex pixel circuitry, such as pixel-level amplifiers, that will lead to further significant improvements in imager performance. PMID:19673228

Quantitative color measurement of pH indicator paper using trichromatic LEDs and TCS230 color sensor

NASA Astrophysics Data System (ADS)

Ghorude, T. N.; Chaudhari, A. L.; Shaligram, A. D.

2008-11-01

Quantitative analysis of pH indicator paper color is needed in the various fields. An indigenously developed Tristimulus colorimeter is used in this work for pH Indicator paper color measurement. The colorimeter uses Trichromatic RGB LEDs and a programmable color light to frequency converter (TCS230), combining configurable silicon photodiodes and a current to frequency converter on a single monolithic CMOS integrated circuit. The output is a square wave (50% duty cycle) with frequency directly proportional to light intensity. Digital input and digital output allow directly to a microcontroller. The light to frequency converter reads an 8*8 array of photodiodes. Sixteen photodiodes have red filters, 16 photodiodes have green filters, 16 photodiodes have blue filters, and 16 photodiodes are clear with no filters. All 16 photodiodes of the same colors are connected in parallel and type of photodiode the device uses during operation is pin selectable. Solutions having different standard pH were prepared and indicator paper was dipped in solution, it shows change in color. Using the developed RGB colorimeter chromaticity coordinates were measured and compared with the chromaticity coordinates measured using Ocean Optics HR-4000 high resolution spectrophotometer.

Solid-state flat panel imager with avalanche amorphous selenium

NASA Astrophysics Data System (ADS)

Scheuermann, James R.; Howansky, Adrian; Goldan, Amir H.; Tousignant, Olivier; Levéille, Sébastien; Tanioka, K.; Zhao, Wei

2016-03-01

Active matrix flat panel imagers (AMFPI) have become the dominant detector technology for digital radiography and fluoroscopy. For low dose imaging, electronic noise from the amorphous silicon thin film transistor (TFT) array degrades imaging performance. We have fabricated the first prototype solid-state AMFPI using a uniform layer of avalanche amorphous selenium (a-Se) photoconductor to amplify the signal to eliminate the effect of electronic noise. We have previously developed a large area solid-state avalanche a-Se sensor structure referred to as High Gain Avalanche Rushing Photoconductor (HARP) capable of achieving gains of 75. In this work we successfully deposited this HARP structure onto a 24 x 30 cm2 TFT array with a pixel pitch of 85 μm. An electric field (ESe) up to 105 Vμm-1 was applied across the a-Se layer without breakdown. Using the HARP layer as a direct detector, an X-ray avalanche gain of 15 +/- 3 was achieved at ESe = 105 Vμm-1. In indirect mode with a 150 μm thick structured CsI scintillator, an optical gain of 76 +/- 5 was measured at ESe = 105 Vμm-1. Image quality at low dose increases with the avalanche gain until the electronic noise is overcome at a constant exposure level of 0.76 mR. We demonstrate the success of a solid-state HARP X-ray imager as well as the largest active area HARP sensor to date.

An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

NASA Astrophysics Data System (ADS)

Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

2017-09-01

Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

Measurement of the Circular Dichroism of Electronic Transitions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutherland, J.C.

2010-08-11

This chapter describes the measurement of circular dichroism (CD) for absorption due to transitions between two distinct electronic states. This is distinguished from absorption of lower energy photons, which are associated with changes of only the vibrational modes of the absorber and from the absorption of higher energy photons, which may result in ionizations. From the instrumental viewpoint, the chapter describes the measurement of CD that can be recorded using a photomultiplier or avalanche photodiode to quantify the intensity of a light beam, a photoelastic modulator to periodically alter the beam's polarization, and a monochromator located between the light sourcemore » and the modulator. Using either criterion, the focus is on the spectral domain spanning about a decade in wavelength (photon energy) from roughly 1.2 {micro}m (1 eV {approx} 160 zJ) in the near infrared to 120 nm (10 eV {approx} 1.6 aJ) in the vacuum ultraviolet (VUV). In the near infrared, there is overlap between the domain of electronic and purely vibrational transitions, the use of photomultipliers or avalanche photodiodes versus solid state detectors and dispersive versus Fourier-transform spectrometers. There is also some overlap in the VUV with synchrotron beamlines that use arrays of magnets called 'insertion devices' to cause the emitted synchrotron radiation to be elliptically polarized. To my knowledge, no single spectrometer spans this entire spectral domain discussed here, and the vast majority of laboratory instruments come nowhere close to either the upper or lower limit. However, similar analytical approaches and types of instrumentation are employed throughout this spectral domain and thus are logically treated together. The focus in this chapter is on the measurement of CD resulting from the inherent chirality of the absorbing system. Several spectroscopic methods that are closely related in terms of science or instrumentation are treated in other chapters. These include magnetic circular dichroism (MCD), linear dichroism (LD), optical rotary dispersion (ORD), fluorescence detected circular dichroism (FDCD), and circularly polarized luminescence (CPL). A basic CD instrument of the type described here can be configured by temporary alterations of the sample compartment, an additional or repositioned detector and modified electronics to perform many of the important experiments in the visible and UV regions. These include unpolarized absorption and total fluorescence in addition to most of the experiments mentioned above. Except for absorption, such extensions of the basic technology will not be discussed here. Other reviews of instrumentation related to CD have appeared, some containing information complementary to that included here.« less

Rad-hard Dual-threshold High-count-rate Silicon Pixel-array Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Adam

In this program, a Voxtel-led team demonstrates a full-format (192 x 192, 100-µm pitch, VX-810) high-dynamic-range x-ray photon-counting sensor—the Dual Photon Resolved Energy Acquisition (DUPREA) sensor. Within the Phase II program the following tasks were completed: 1) system analysis and definition of the DUPREA sensor requirements; 2) design, simulation, and fabrication of the full-format VX-810 ROIC design; 3) design, optimization, and fabrication of thick, fully depleted silicon photodiodes optimized for x-ray photon collection; 4) hybridization of the VX-810 ROIC to the photodiode array in the creation of the optically sensitive focal-plane array; 5) development of an evaluation camera; and 6)more » electrical and optical characterization of the sensor.« less

Optochemical sensor based on screenprinted fluorescent sensorspots surrounded by organic photodiodes for multianalyte detection

NASA Astrophysics Data System (ADS)

Kraker, E.; Lamprecht, B.; Haase, A.; Jakopic, G.; Abel, T.; Konrad, C.; Köstler, S.; Tscherner, M.; Stadlober, B.; Mayr, T.

2010-08-01

A compact, integrated photoluminescence based oxygen sensor, utilizing an organic light emitting device (OLED) as the light source and an organic photodiode (OPD) as the detection unit, is described. The detection system of the sensor array consists of an array of circular screen-printed fluorescent sensor spots surrounded by organic photodiodes as integrated fluorescence detectors. The OPD originates from the well-known Tang photodiode, consisting of a stacked layer of copper phthalocyanine (CuPc, p-type material) and perylene tetracarboxylic bisbenzimidazole (PTCBi, n-type material). An additional layer of tris-8-hydroxyquinolinatoaluminium (Alq3, n-type material) was inserted between the PTCBi layer and cathode. An ORMOCERR layer was used as encapsulation layer. For excitation an organic light emitting diode is used. The sensor spot and the detector are processed on the same flexible substrate. This approach not only simplifies the detection system by minimizing the numbers of required optical components - no optical filters have to be used for separating the excitation light and the luminescent emission-, but also has a large potential for low-cost sensor applications. The feasibility of the concept is demonstrated by an integrated oxygen sensor, indicating good performance. Sensor schemes for other chemical parameters are proposed.

A Comprehensive Analysis of the Physical Properties of Advanced GaAs/AlGaAs Junctions

NASA Technical Reports Server (NTRS)

Menkara, Hicham M.

1996-01-01

Extensive studies have been performed on MQW junctions and structures because of their potential applications as avalanche photodetectors in optical communications and imaging systems. The role of the avalanche photodiode is to provide for the conversion of an optical signal into charge. Knowledge of junction physics, and the various carrier generation/recombination mechanisms, is crucial for effectively optimizing the conversion process and increasing the structure's quantum efficiency. In addition, the recent interest in the use of APDs in imaging systems has necessitated the development of semiconductor junctions with low dark currents and high gains for low light applications. Because of the high frame rate and high pixel density requirements in new imaging applications, it is necessary to provide some front-end gain in the imager to allow operation under reasonable light conditions. Understanding the electron/hole impact ionization process, as well as diffusion and surface leakage effects, is needed to help maintain low dark currents and high gains for such applications. In addition, the APD must be capable of operating with low power, and low noise. Knowledge of the effects of various doping configurations and electric field profiles, as well as the excess noise resulting from the avalanche process, are needed to help maintain low operating bias and minimize the noise output.

System and method for measuring fluorescence of a sample

DOEpatents

Riot, Vincent J

2015-03-24

The present disclosure provides a system and a method for measuring fluorescence of a sample. The sample may be a polymerase-chain-reaction (PCR) array, a loop-mediated-isothermal amplification array, etc. LEDs are used to excite the sample, and a photodiode is used to collect the sample's fluorescence. An electronic offset signal is used to reduce the effects of background fluorescence and the noises from the measurement system. An integrator integrates the difference between the output of the photodiode and the electronic offset signal over a given period of time. The resulting integral is then converted into digital domain for further processing and storage.

Evaluation of the electro-optic direction sensor

NASA Technical Reports Server (NTRS)

Johnson, A. R.; Salomon, P. M.

1973-01-01

Evaluation of a no-moving-parts single-axis star tracker called an electro-optic direction sensor (EODS) concept is described and the results are given in detail. The work involved experimental evaluation of a breadboard sensor yielding results which would permit design of a prototype sensor for a specific application. The laboratory work included evaluation of the noise equivalent input angle of the sensor, demonstration of a technique for producing an acquisition signal, constraints on the useful field-of-view, and a qualitative evaluation of the effects of stray light. In addition, the potential of the silicon avalanche-type photodiode for this application was investigated. No benefit in noise figure was found, but the easily adjustable gain of the avalanche device was useful. The use of mechanical tuning of the modulating element to reduce voltage requirements was also explored. The predicted performance of EODS in both photomultiplier and solid state detector configurations was compared to an existing state-of-the-art star tracker.

Cosmic Ray Measurements by Scintillators with Metal Resistor Semiconductor Avalanche Photo Diodes

ERIC Educational Resources Information Center

Blanco, Francesco; La Rocca, Paola; Riggi, Francesco; Akindinov, Alexandre; Mal'kevich, Dmitry

2008-01-01

An educational set-up for cosmic ray physics experiments is described. The detector is based on scintillator tiles with a readout through metal resistor semiconductor (MRS) avalanche photo diode (APD) arrays. Typical measurements of the cosmic angular distribution at sea level and a study of the East-West asymmetry obtained by such a device are…

Advances in SELEX ES infrared detectors for space and astronomy

NASA Astrophysics Data System (ADS)

Knowles, P.; Hipwood, L.; Baker, I.; Weller, H.

2017-11-01

Selex ES produces a wide range of infrared detectors from mercury cadmium telluride (MCT) and triglycine sulfate (TGS), and has supplied both materials into space programmes spanning a period of over 40 years. Current development activities that underpin potential future space missions include large format arrays for near- and short-wave infrared (NIR and SWIR) incorporating radiation-hard designs and suppression of glow. Improved heterostructures are aimed at the reduction of dark currents and avalanche photodiodes (APDs), and parallel studies have been undertaken for low-stress MCT array mounts. Much of this development work has been supported by ESA, UK Space, and ESO, and some has been performed in collaboration with the UK Astronomy Technology Centre and E2V. This paper focuses on MCT heterostructure developments and novel design elements in silicon read-out chips (ROICs). The 2048 x 2048 element, 17um pitch ROIC for ESA's SWIR array development forms the basis for the largest cooled infrared detector manufactured in Europe. Selex ES MCT is grown by metal organic vapour phase epitaxy (MOVPE), currently on 75mm diameter GaAs substrates. The MCT die size of the SWIR array is 35mm square and only a single array can be printed on the 75mm diameter wafer, utilising only 28% of the wafer area. The situation for 100mm substrates is little better, allowing only 2 arrays and 31% utilisation. However, low cost GaAs substrates are readily available in 150mm diameter and the MCT growth is scalable to this size, offering the real possibility of 6 arrays per wafer with 42% utilisation. A similar 2k x 2k ROIC is the goal of ESA's NIR programme, which is currently in phase 2 with a 1k x 1k demonstrator, and a smaller 320 x 256 ROIC (SAPHIRA) has been designed for ESO for the adaptive optics application in the VLT Gravity instrument. All 3 chips have low noise source-follower architecture and are enabled for MCT APD arrays, which have been demonstrated by ESO to be capable of single photon detection. The possibility therefore exists in the near future of demonstrating a photon counting, 2k x 2k SWIR MCT detector manufactured on an affordable wafer scale of 6 arrays per wafer.

Organic non-volatile resistive photo-switches for flexible image detector arrays.

PubMed

Nau, Sebastian; Wolf, Christoph; Sax, Stefan; List-Kratochvil, Emil J W

2015-02-01

A unique implementation of an organic image detector using resistive photo-switchable pixels is presented. This resistive photo-switch comprises the vertical integration of an organic photodiode and an organic resistive switching memory element. The photodiodes act as a photosensitive element while the resistive switching elements simultaneously store the detected light information. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of an advanced Two-Micron triple-pulse IPDA lidar for carbon dioxide and water vapor measurements

NASA Astrophysics Data System (ADS)

Petros, Mulugeta; Refaat, Tamer F.; Singh, Upendra N.; Yu, Jirong; Antill, Charles; Remus, Ruben; Taylor, Bryant D.; Wong, Teh-Hwa; Reithmaier, Karl; Lee, Jane; Ismail, Syed; Davis, Kenneth J.

2018-04-01

An advanced airborne triple-pulse 2-μm integrated path differential absorption (IPDA) lidar is under development at NASA Langley Research Center that targets both carbon dioxide (CO2) and water vapor (H2O) measurements simultaneously and independently. This lidar is an upgrade to the successfully demonstrated CO2 2-μm double-pulse IPDA. Upgrades include high-energy, highrepetition rate 2-μm triple-pulse laser transmitter, innovative wavelength control and advanced HgCdTe (MCT) electron-initiated avalanche photodiode detection system. Ground testing and airborne validation plans are presented.

Integration of a 6LilnSe 2 thermal neutron detector into a CubeSat instrument

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egner, Joanna C.; Groza, Michael; Burger, Arnold

This paper describes the development of a preliminary compact and lightweight neutron detection system that uses the low power consuming CubeSat platform and will be especially effective for space-based applications. This is made possible using the novel 6LiInSe 2 scintillator crystal and a silicon avalanche photodiode (Si-APD). The schematics of this instrument are presented as well as the response of the instrument to initial testing under alpha radiation. The entire system weighs 670 grams and requires 5 volts direct current at 3 watts.

Integration of a 6LilnSe 2 thermal neutron detector into a CubeSat instrument

DOE PAGES

Egner, Joanna C.; Groza, Michael; Burger, Arnold; ...

2016-11-08

This paper describes the development of a preliminary compact and lightweight neutron detection system that uses the low power consuming CubeSat platform and will be especially effective for space-based applications. This is made possible using the novel 6LiInSe 2 scintillator crystal and a silicon avalanche photodiode (Si-APD). The schematics of this instrument are presented as well as the response of the instrument to initial testing under alpha radiation. The entire system weighs 670 grams and requires 5 volts direct current at 3 watts.

Femtosecond Laser--Pumped Source of Entangled Photons for Quantum Cryptography Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, D.; Donaldson, W.; Sobolewski, R.

2007-07-31

We present an experimental setup for generation of entangled-photon pairs via spontaneous parametric down-conversion, based on the femtosecond-pulsed laser. Our entangled-photon source utilizes a 76-MHz-repetition-rate, 100-fs-pulse-width, mode-locked, ultrafast femtosecond laser, which can produce, on average, more photon pairs than a cw laser of an equal pump power. The resulting entangled pairs are counted by a pair of high-quantum-efficiency, single-photon, silicon avalanche photodiodes. Our apparatus is intended as an efficient source/receiver system for the quantum communications and quantum cryptography applications.

SAPHIRA detector for infrared wavefront sensing

NASA Astrophysics Data System (ADS)

Finger, Gert; Baker, Ian; Alvarez, Domingo; Ives, Derek; Mehrgan, Leander; Meyer, Manfred; Stegmeier, Jörg; Weller, Harald J.

2014-08-01

The only way to overcome the CMOS noise barrier of near infrared sensors used for wavefront sensing and fringe tracking is the amplification of the photoelectron signal inside the infrared pixel by means of the avalanche gain. In 2007 ESO started a program at Selex to develop near infrared electron avalanche photodiode arrays (eAPD) for wavefront sensing and fringe tracking. In a first step the cutoff wavelength was reduced from 4.5 micron to 2.5 micron in order to verify that the dark current scales with the bandgap and can be reduced to less than one electron/ms, the value required for wavefront sensing. The growth technology was liquid phase epitaxy (LPE) with annular diodes based on the loophole interconnect technology. The arrays required deep cooling to 40K to achieve acceptable cosmetic performance at high APD gain. The second step was to develop a multiplexer tailored to the specific application of the GRAVITY instrument wavefront sensors and the fringe tracker. The pixel format is 320x256 pixels. The array has 32 parallel video outputs which are arranged in such a way that the full multiplex advantage is available also for small subwindows. Nondestructive readout schemes with subpixel sampling are possible. This reduces the readout noise at high APD gain well below the subelectron level at frame rates of 1 KHz. The third step was the change of the growth technology from liquid phase epitaxy to metal organic vapour phase epitaxy (MOVPE). This growth technology allows the band structure and doping to be controlled on a 0.1μm scale and provides more flexibility for the design of diode structures. The bandgap can be varied for different layers of Hg(1-x)CdxTe. It is possible to make heterojunctions and apply solid state engineering techniques. The change to MOVPE resulted in a dramatic improvement in the cosmetic quality with 99.97 % operable pixels at an operating temperature of 85K. Currently this sensor is deployed in the 4 wavefront sensors and in the fringe tracker of the VLT instrument GRAVITY. Initial results will be presented. An outlook will be given on the potential of APD technology to be employed in large format near infrared science detectors. Several of the results presented here have also been shown to a different audience at the Scientific Detector Workshop in October 2013 in Florence but this paper has been updated with new results [1].

A positron emission tomograph based on LSO-APD modules with a sampling ADC read-out system for a students' advanced laboratory course.

PubMed

Schneider, Florian R; Mann, Alexander B; Konorov, Igor; Delso, Gaspar; Paul, Stephan; Ziegler, Sibylle I

2012-06-01

A one-day laboratory course on positron emission tomography (PET) for the education of physics students and PhD students in medical physics has been set up. In the course, the physical background and the principles of a PET scanner are introduced. Course attendees set the system in operation, calibrate it using a (22)Na point source and reconstruct different source geometries filled with (18)F. The PET scanner features an individual channel read-out of 96 lutetium oxyorthosilicate (LSO) scintillator crystals coupled to avalanche photodiodes (APD). The analog data of each APD are digitized by fast sampling analog to digital converters (SADC) and processed within field programmable gate arrays (FPGA) to extract amplitudes and time stamps. All SADCs are continuously sampling with a precise rate of 80MHz, which is synchronous for the whole system. The data is transmitted via USB to a Linux PC, where further processing and the image reconstruction are performed. The course attendees get an insight into detector techniques, modern read-out electronics, data acquisition and PET image reconstruction. In addition, a short introduction to some common software applications used in particle and high energy physics is part of the course. Copyright © 2011. Published by Elsevier GmbH.

Development of a PET Scanner for Simultaneously Imaging Small Animals with MRI and PET

PubMed Central

Thompson, Christopher J; Goertzen, Andrew L; Thiessen, Jonathan D; Bishop, Daryl; Stortz, Greg; Kozlowski, Piotr; Retière, Fabrice; Zhang, Xuezhu; Sossi, Vesna

2014-01-01

Recently, positron emission tomography (PET) is playing an increasingly important role in the diagnosis and staging of cancer. Combined PET and X-ray computed tomography (PET-CT) scanners are now the modality of choice in cancer treatment planning. More recently, the combination of PET and magnetic resonance imaging (MRI) is being explored in many sites. Combining PET and MRI has presented many challenges since the photo-multiplier tubes (PMT) in PET do not function in high magnetic fields, and conventional PET detectors distort MRI images. Solid state light sensors like avalanche photo-diodes (APDs) and more recently silicon photo-multipliers (SiPMs) are much less sensitive to magnetic fields thus easing the compatibility issues. This paper presents the results of a group of Canadian scientists who are developing a PET detector ring which fits inside a high field small animal MRI scanner with the goal of providing simultaneous PET and MRI images of small rodents used in pre-clinical medical research. We discuss the evolution of both the crystal blocks (which detect annihilation photons from positron decay) and the SiPM array performance in the last four years which together combine to deliver significant system performance in terms of speed, energy and timing resolution. PMID:25120157

X-ray and gamma ray detector readout system

DOEpatents

Tumer, Tumay O; Clajus, Martin; Visser, Gerard

2010-10-19

A readout electronics scheme is under development for high resolution, compact PET (positron emission tomography) imagers based on LSO (lutetium ortho-oxysilicate, Lu.sub.2SiO.sub.5) scintillator and avalanche photodiode (APD) arrays. The key is to obtain sufficient timing and energy resolution at a low power level, less than about 30 mW per channel, including all required functions. To this end, a simple leading edge level crossing discriminator is used, in combination with a transimpedance preamplifier. The APD used has a gain of order 1,000, and an output noise current of several pA/ Hz, allowing bipolar technology to be used instead of CMOS, for increased speed and power efficiency. A prototype of the preamplifier and discriminator has been constructed, achieving timing resolution of 1.5 ns FWHM, 2.7 ns full width at one tenth maximum, relative to an LSO/PMT detector, and an energy resolution of 13.6% FWHM at 511 keV, while operating at a power level of 22 mW per channel. Work is in progress towards integration of this preamplifier and discriminator with appropriate coincidence logic and amplitude measurement circuits in an ASIC suitable for a high resolution compact PET instrument. The detector system and/or ASIC can also be used for many other applications for medical to industrial imaging.

High-sensitivity, high-speed continuous imaging system

DOEpatents

Watson, Scott A; Bender, III, Howard A

2014-11-18

A continuous imaging system for recording low levels of light typically extending over small distances with high-frame rates and with a large number of frames is described. Photodiode pixels disposed in an array having a chosen geometry, each pixel having a dedicated amplifier, analog-to-digital convertor, and memory, provide parallel operation of the system. When combined with a plurality of scintillators responsive to a selected source of radiation, in a scintillator array, the light from each scintillator being directed to a single corresponding photodiode in close proximity or lens-coupled thereto, embodiments of the present imaging system may provide images of x-ray, gamma ray, proton, and neutron sources with high efficiency.

Broadband Electric-Field Sensor Array Technology

DTIC Science & Technology

2012-08-05

output voltage modulation on the output RF transmission line (impedance Z0 = 50 Ω) via a transimpedance amplifier connected to the photodiode. The...voltage amplitude is where G is the conversion gain of the photodiode and amplifier . The RF power detected by an RF receiver with a matched impedance...wave (CW) tunable near-infrared laser amplified by an erbium-doped fiber amplifier (EDFA) is guided by single-mode optical fiber and coupled into

A discrete component low-noise preamplifier readout for a linear (1×16) SiC photodiode array

NASA Astrophysics Data System (ADS)

Kahle, Duncan; Aslam, Shahid; Herrero, Federico A.; Waczynski, Augustyn

2016-09-01

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1×16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analog signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

NASA Technical Reports Server (NTRS)

Kahle, Duncan; Aslam, Shahid; Herrero, Frederico A.; Waczynski, Augustyn

2016-01-01

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

Avalanches and plasticity for colloids in a time dependent optical trap

DOE PAGES

Olson Reichhardt, Cynthia Jane; McDermott, Danielle Marie; Reichhardt, Charles

2015-08-25

Here, with the use of optical traps it is possible to confine assemblies of colloidal particles in two-dimensional and quasi-one-dimensional arrays. Here we examine how colloidal particles rearrange in a quasi-one-dimensional trap with a time dependent confining potential. The particle motion occurs both through slow elastic uniaxial distortions as well as through abrupt large-scale two-dimensional avalanches associated with plastic rearrangements. During the avalanches the particle velocity distributions extend over a broad range and can be fit to a power law consistent with other studies of plastic events mediated by dislocations.

Integrated photodiodes complement the VCSEL platform

NASA Astrophysics Data System (ADS)

Grabherr, Martin; Gerlach, Philipp; King, Roger; Jäger, Roland

2009-02-01

Many VCSEL based applications require optical feedback of the emitted light. E.g. light output monitor functions in transceivers are used to compensate for thermally induced power variation, power degradation, or even breakdown of pixels if logic for redundancy is available. In this case integrated photodiodes offer less complex assembly compared to widely used hybrid solutions, e.g. known in LC-TOSA assemblies. Especially for chip-on-board (COB) assembly and array configurations, integrated monitor diodes offer a simple and compact power monitoring possibility. For 850 nm VCSELs the integrated photodiodes can be placed between substrate and bottom-DBR, on top of the top-DBR, or inbetween the layer sequence of one DBR. Integrated intra-cavity photodiodes offer superior characteristics in terms of reduced sensitivity for spontaneously emitted light [1] and thus are very well suited for power monitoring or even endof- life (EOL) detection. We present an advanced device design for an intra-cavity photodiode and according performance data in comparison with competing approaches.

Optimization and application of cooled avalanche photodiodes for spectroscopic fluctuation measurements with ultra-fast charge exchange recombination spectroscopy

DOE PAGES

Truong, D. D.; Fonck, R. J.; McKee, G. R.

2016-09-23

The Ultra Fast Charge Exchange Recombination Spectroscopy (UF-CHERS) diagnostic is a highly specialized spectroscopic instrument with 2 spatial channels consisting of 8 spectral channels each and a resolution of ~0.25 nm deployed at DIII-D to measure turbulent ion temperature fluctuations. Charge exchange emissions are obtained between 528-530 nm with 1 μs time resolution to study plasma instabilities. A primary challenge of extracting fluctuation measurements from raw UF-CHERS signals is photon and electronic noise. In order to reduce dark current, the Avalanche Photodiode (APD) detectors are thermoelectrically cooled. State-of-the-art components are used for the signal amplifiers and conditioners to minimize electronicmore » noise. Due to the low incident photon power (≤ 1 nW), APDs with a gain of up to 300 are used to optimize the signal to noise ratio. Maximizing the APDs’ gain while minimizing the excess noise factor (ENF) is essential since the total noise of the diagnostic sets a floor for the minimum level of detectable broadband fluctuations. The APDs’ gain should be high enough that photon noise dominates electronic noise, but not excessive so that the ENF overwhelms plasma fluctuations. A new generation of cooled APDs and optimized preamplifiers exhibits significantly enhanced signal-to-noise compared to a previous generation. Experiments at DIII-D have allowed for characterization and optimization of the ENF vs. gain. Here, a gain of ~100 at 1700 V is found to be near optimal for most plasma conditions. Ion temperature and toroidal velocity fluctuations due to the Edge Harmonic Oscillation (EHO) in Quiescent H-mode (QH) plasmas are presented to demonstrate UF-CHERS’ capabilities.« less

In Orbit Performance of Si Avalanche Photodiode Single Photon Counting Modules in the Geoscience Laser Altimeter System on ICESat

NASA Technical Reports Server (NTRS)

Sun, X.; Jester, P. L.; Palm, S. P.; Abshire, J. B.; Spinhime, J. D.; Krainak, M. A.

2006-01-01

Si avalanche photodiode (APD) single photon counting modules (SPCMs) are used in the Geoscience Laser Altimeter System (GLAS) on Ice, Cloud, anti land Elevation Satellite (ICESat), currently in orbit measuring Earth surface elevation and atmosphere backscattering. These SPCMs are used to measure cloud and aerosol backscatterings to the GLAS laser light at 532-nm wavelength with 60-70% quantum efficiencies and up to 15 millions/s maximum count rates. The performance of the SPCMs has been closely monitored since ICESat launch on January 12, 2003. There has been no measurable change in the quantum efficiency, as indicated by the average photon count rates in response to the background light from the sunlit earth. The linearity and the afterpulsing seen from the cloud and surface backscatterings profiles have been the same as those during ground testing. The detector dark count rates monitored while the spacecraft was in the dark side of the globe have increased almost linearly at about 60 counts/s per day due to space radiation damage. The radiation damage appeared to be independent of the device temperature and power states. There was also an abrupt increase in radiation damage during the solar storm in 28-30 October 2003. The observed radiation damage is a factor of two to three lower than the expected and sufficiently low to provide useful atmosphere backscattering measurements through the end of the ICESat mission. To date, these SPCMs have been in orbit for more than three years. The accumulated operating time to date has reached 290 days (7000 hours). These SPCMs have provided unprecedented receiver sensitivity and dynamic range in ICESat atmosphere backscattering measurements.

HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements

NASA Astrophysics Data System (ADS)

Gravrand, O.; Rothman, J.; Cervera, C.; Baier, N.; Lobre, C.; Zanatta, J. P.; Boulade, O.; Moreau, V.; Fieque, B.

2016-09-01

HgCdTe (MCT) is a very versatile material system for infrared (IR) detection, suitable for high performance detection in a wide range of applications and spectral ranges. Indeed, the ability to tailor the cutoff frequency as close as possible to the needs makes it a perfect candidate for high performance detection. Moreover, the high quality material available today, grown either by molecular beam epitaxy or liquid phase epitaxy, allows for very low dark currents at low temperatures, suitable for low flux detection applications such as science imaging. MCT has also demonstrated robustness to the aggressive environment of space and faces, therefore, a large demand for space applications. A satellite may stare at the earth, in which case detection usually involves a lot of photons, called a high flux scenario. Alternatively, a satellite may stare at outer space for science purposes, in which case the detected photon number is very low, leading to low flux scenarios. This latter case induces very strong constraints onto the detector: low dark current, low noise, (very) large focal plane arrays. The classical structure used to fulfill those requirements are usually p/ n MCT photodiodes. This type of structure has been deeply investigated in our laboratory for different spectral bands, in collaboration with the CEA Astrophysics lab. However, another alternative may also be investigated with low excess noise: MCT n/ p avalanche photodiodes (APD). This paper reviews the latest achievements obtained on this matter at DEFIR (LETI and Sofradir common laboratory) from the short wave infrared (SWIR) band detection for classical astronomical needs, to long wave infrared (LWIR) band for exoplanet transit spectroscopy, up to very long wave infrared (VLWIR) bands. The different available diode architectures ( n/ p VHg or p/ n, or even APDs) are reviewed, including different available ROIC architectures for low flux detection.

Digital solar edge tracker for the Halogen Occultation Experiment

NASA Technical Reports Server (NTRS)

Mauldin, L. E., III; Moore, A. S.; Stump, C. W.; Mayo, L. S.

1987-01-01

The optical and electronic design of the Halogen Occultation Experiment (Haloe) elevation sun sensor is described. The Haloe instrument is a gas-correlation radiometer now being developed at NASA Langley for the Upper Atmosphere Research Satellite. The system uses a Galilean telescope to form a solar image on a linear silicon photodiode array. The array is a self-scanned monolithic CCD. The addresses of both solar edges imaged on the array are used by the control/pointing system to scan the Haloe science instantaneous field of view (IFOV) across the vertical solar diameter during instrument calibration and then to maintain the science IFOV 4 arcmin below the top edge during the science data occultation event. Vertical resolution of 16 arcsec and a radiometric dynamic range of 100 are achieved at the 700-nm operating wavelength. The design provides for loss of individual photodiode elements without loss of angular tracking capability.

Downsampling Photodetector Array with Windowing

NASA Technical Reports Server (NTRS)

Patawaran, Ferze D.; Farr, William H.; Nguyen, Danh H.; Quirk, Kevin J.; Sahasrabudhe, Adit

2012-01-01

In a photon counting detector array, each pixel in the array produces an electrical pulse when an incident photon on that pixel is detected. Detection and demodulation of an optical communication signal that modulated the intensity of the optical signal requires counting the number of photon arrivals over a given interval. As the size of photon counting photodetector arrays increases, parallel processing of all the pixels exceeds the resources available in current application-specific integrated circuit (ASIC) and gate array (GA) technology; the desire for a high fill factor in avalanche photodiode (APD) detector arrays also precludes this. Through the use of downsampling and windowing portions of the detector array, the processing is distributed between the ASIC and GA. This allows demodulation of the optical communication signal incident on a large photon counting detector array, as well as providing architecture amenable to algorithmic changes. The detector array readout ASIC functions as a parallel-to-serial converter, serializing the photodetector array output for subsequent processing. Additional downsampling functionality for each pixel is added to this ASIC. Due to the large number of pixels in the array, the readout time of the entire photodetector is greater than the time between photon arrivals; therefore, a downsampling pre-processing step is done in order to increase the time allowed for the readout to occur. Each pixel drives a small counter that is incremented at every detected photon arrival or, equivalently, the charge in a storage capacitor is incremented. At the end of a user-configurable counting period (calculated independently from the ASIC), the counters are sampled and cleared. This downsampled photon count information is then sent one counter word at a time to the GA. For a large array, processing even the downsampled pixel counts exceeds the capabilities of the GA. Windowing of the array, whereby several subsets of pixels are designated for processing, is used to further reduce the computational requirements. The grouping of the designated pixel frame as the photon count information is sent one word at a time to the GA, the aggregation of the pixels in a window can be achieved by selecting only the designated pixel counts from the serial stream of photon counts, thereby obviating the need to store the entire frame of pixel count in the gate array. The pixel count se quence from each window can then be processed, forming lower-rate pixel statistics for each window. By having this processing occur in the GA rather than in the ASIC, future changes to the processing algorithm can be readily implemented. The high-bandwidth requirements of a photon counting array combined with the properties of the optical modulation being detected by the array present a unique problem that has not been addressed by current CCD or CMOS sensor array solutions.

Two-way and three-way approaches to ultra high performance liquid chromatography-photodiode array dataset for the quantitative resolution of a two-component mixture containing ciprofloxacin and ornidazole.

PubMed

Dinç, Erdal; Ertekin, Zehra Ceren; Büker, Eda

2016-09-01

Two-way and three-way calibration models were applied to ultra high performance liquid chromatography with photodiode array data with coeluted peaks in the same wavelength and time regions for the simultaneous quantitation of ciprofloxacin and ornidazole in tablets. The chromatographic data cube (tensor) was obtained by recording chromatographic spectra of the standard and sample solutions containing ciprofloxacin and ornidazole with sulfadiazine as an internal standard as a function of time and wavelength. Parallel factor analysis and trilinear partial least squares were used as three-way calibrations for the decomposition of the tensor, whereas three-way unfolded partial least squares was applied as a two-way calibration to the unfolded dataset obtained from the data array of ultra high performance liquid chromatography with photodiode array detection. The validity and ability of two-way and three-way analysis methods were tested by analyzing validation samples: synthetic mixture, interday and intraday samples, and standard addition samples. Results obtained from two-way and three-way calibrations were compared to those provided by traditional ultra high performance liquid chromatography. The proposed methods, parallel factor analysis, trilinear partial least squares, unfolded partial least squares, and traditional ultra high performance liquid chromatography were successfully applied to the quantitative estimation of the solid dosage form containing ciprofloxacin and ornidazole. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Linear array of photodiodes to track a human speaker for video recording

NASA Astrophysics Data System (ADS)

DeTone, D.; Neal, H.; Lougheed, R.

2012-12-01

Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant- the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting-a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

Linear LIDAR versus Geiger-mode LIDAR: impact on data properties and data quality

NASA Astrophysics Data System (ADS)

Ullrich, A.; Pfennigbauer, M.

2016-05-01

LIDAR has become the inevitable technology to provide accurate 3D data fast and reliably even in adverse measurement situations and harsh environments. It provides highly accurate point clouds with a significant number of additional valuable attributes per point. LIDAR systems based on Geiger-mode avalanche photo diode arrays, also called single photon avalanche photo diode arrays, earlier employed for military applications, now seek to enter the commercial market of 3D data acquisition, advertising higher point acquisition speeds from longer ranges compared to conventional techniques. Publications pointing out the advantages of these new systems refer to the other category of LIDAR as "linear LIDAR", as the prime receiver element for detecting the laser echo pulses - avalanche photo diodes - are used in a linear mode of operation. We analyze the differences between the two LIDAR technologies and the fundamental differences in the data they provide. The limitations imposed by physics on both approaches to LIDAR are also addressed and advantages of linear LIDAR over the photon counting approach are discussed.

Detector with internal gain for short-wave infrared ranging applications

NASA Astrophysics Data System (ADS)

Fathipour, Vala; Mohseni, Hooman

2017-09-01