49 CFR 236.735 - Current, leakage.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Current, leakage. 236.735 Section 236.735 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION... Current, leakage. A stray electric current of relatively small value which flows through or across the...

49 CFR 236.735 - Current, leakage.

Code of Federal Regulations, 2011 CFR

2011-10-01

... Current, leakage. A stray electric current of relatively small value which flows through or across the... 49 Transportation 4 2011-10-01 2011-10-01 false Current, leakage. 236.735 Section 236.735 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION...

49 CFR 236.735 - Current, leakage.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Current, leakage. A stray electric current of relatively small value which flows through or across the... 49 Transportation 4 2014-10-01 2014-10-01 false Current, leakage. 236.735 Section 236.735 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION...

49 CFR 236.735 - Current, leakage.

Code of Federal Regulations, 2013 CFR

2013-10-01

... Current, leakage. A stray electric current of relatively small value which flows through or across the... 49 Transportation 4 2013-10-01 2013-10-01 false Current, leakage. 236.735 Section 236.735 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION...

49 CFR 236.735 - Current, leakage.

Code of Federal Regulations, 2012 CFR

2012-10-01

... Current, leakage. A stray electric current of relatively small value which flows through or across the... 49 Transportation 4 2012-10-01 2012-10-01 false Current, leakage. 236.735 Section 236.735 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION...

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

NASA Astrophysics Data System (ADS)

Sometani, Mitsuru; Okamoto, Dai; Harada, Shinsuke; Ishimori, Hitoshi; Takasu, Shinji; Hatakeyama, Tetsuo; Takei, Manabu; Yonezawa, Yoshiyuki; Fukuda, Kenji; Okumura, Hajime

2015-01-01

The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO2/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO2/4H-SiC interface. On the basis of Arrhenius plots of the PF current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO2 films on the Si-face of 4H-SiC.

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sometani, Mitsuru; Takei, Manabu; Fuji Electric Co. Ltd., 1 Fuji-machi, Hino, 191-8502 Tokyo

The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO{sub 2}/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO{sub 2}/4H-SiC interface. On the basis of Arrhenius plots of the PFmore » current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO{sub 2} films on the Si-face of 4H-SiC.« less

Suppression of TFT leakage current effect on active matrix displays by employing a new circular switch

NASA Astrophysics Data System (ADS)

Lee, Jae-Hoon; Park, Hyun-Sang; Jeon, Jae-Hong; Han, Min-Koo

2008-03-01

We have proposed a new poly-Si TFT pixel, which can suppress TFT leakage current effect on active matrix organic diode (AMOLED) displays, by employing a new circular switching TFT and additional signal line for compensating the leakage current. When the leakage current of switching TFT is increased, the VGS of the current driving TFT in the proposed pixel is not altered by the variable data voltages due to the circular switching TFT. Our simulation results show that OLED current variation of the proposed pixel can be suppressed less than 3%, while that of conventional pixel exceeds 30%. The proposed pixel may be suitable to suppress the leakage current effect on AMOLED display.

Leakage current evaluation for pn junctions formed in DC and RF MeV ion implanted wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yanagisawa, Yasunobu; Honda, Mitsuharu; Ogasawara, Makota

1996-12-31

The leakage current of pn junctions formed in DC and RF MeV implanted wells have been evaluated. There is no substantial difference in the leakage current levels between the continuous and pulsive beam implantations. However, the leakage current, so called diffusion current, for RF implanted wells is slightly higher than that for DC implanted wells on some condition. This suggests a possibility that relatively higher density of residual defects remains in the case of RIF implant.

Determination of canal leakage potential using continuous resistivity profiling techniques, Interstate and Tri-State Canals, western Nebraska and eastern Wyoming, 2004

USGS Publications Warehouse

Ball, Lyndsay B.; Kress, Wade H.; Steele, Gregory V.; Cannia, James C.; Andersen, Michael J.

2006-01-01

In the North Platte River Basin, a ground-water model is being developed to evaluate the effectiveness of using water leakage from selected irrigation canal systems to enhance ground-water recharge. The U.S. Geological Survey, in cooperation with the North Platte Natural Resources District, used land-based capacitively coupled and water-borne direct-current continuous resistivity profiling techniques to map the lithology of the upper 8 meters and to interpret the relative canal leakage potential of 110 kilometers of the Interstate and Tri-State Canals in western Nebraska and eastern Wyoming. Lithologic descriptions from 25 test holes were used to evaluate the effectiveness of both techniques for indicating relative grain size. An interpretive color scale was developed that symbolizes contrasting resistivity features indicative of different grain-size categories. The color scale was applied to the vertically averaged resistivity and used to classify areas of the canals as having either high, moderate, or low canal leakage potential. When results were compared with the lithologic descriptions, both land-based and water-borne continuous resistivity profiling techniques were determined to be effective at differentiating coarse-grained from fine-grained sediment. Both techniques were useful for producing independent, similar interpretations of canal leakage potential.

Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

NASA Astrophysics Data System (ADS)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Watahiki, Tatsuro; Yamamuka, Mikio

2018-04-01

The origin of the leakage current of a trench-type vertical GaN diode was discussed. We found that the edge of p-GaN is the main leakage spot. To reduce the reverse leakage current at the edge of p-GaN, a dual-anode process was proposed. As a result, the reverse blocking voltage defined at the leakage current density of 1 mA/cm2 of a vertical GaN junction barrier Schottky (JBS) diode was improved from 780 to 1,190 V, which is the highest value ever reported for vertical GaN Schottky barrier diodes (SBDs).

Investigation of Turbulent Tip Leakage Vortex in an Axial Water Jet Pump with Large Eddy Simulation

NASA Technical Reports Server (NTRS)

Hah, Chunill; Katz, Joseph

2012-01-01

Detailed steady and unsteady numerical studies were performed to investigate tip clearance flow in an axial water jet pump. The primary objective is to understand physics of unsteady tip clearance flow, unsteady tip leakage vortex, and cavitation inception in an axial water jet pump. Steady pressure field and resulting steady tip leakage vortex from a steady flow analysis do not seem to explain measured cavitation inception correctly. The measured flow field near the tip is unsteady and measured cavitation inception is highly transient. Flow visualization with cavitation bubbles shows that the leakage vortex is oscillating significantly and many intermittent vortex ropes are present between the suction side of the blade and the tip leakage core vortex. Although the flow field is highly transient, the overall flow structure is stable and a characteristic frequency seems to exist. To capture relevant flow physics as much as possible, a Reynolds-averaged Navier-Stokes (RANS) calculation and a Large Eddy Simulation (LES) were applied for the current investigation. The present study reveals that several vortices from the tip leakage vortex system cross the tip gap of the adjacent blade periodically. Sudden changes in local pressure field inside tip gap due to these vortices create vortex ropes. The instantaneous pressure filed inside the tip gap is drastically different from that of the steady flow simulation. Unsteady flow simulation which can calculate unsteady vortex motion is necessary to calculate cavitation inception accurately even at design flow condition in such a water jet pump.

Intensity and Compactness Enabled Saliency Estimation for Leakage Detection in Diabetic and Malarial Retinopathy.

PubMed

Zhao, Yitian; Zheng, Yalin; Liu, Yonghuai; Yang, Jian; Zhao, Yifan; Chen, Duanduan; Wang, Yongtian

2017-01-01

Leakage in retinal angiography currently is a key feature for confirming the activities of lesions in the management of a wide range of retinal diseases, such as diabetic maculopathy and paediatric malarial retinopathy. This paper proposes a new saliency-based method for the detection of leakage in fluorescein angiography. A superpixel approach is firstly employed to divide the image into meaningful patches (or superpixels) at different levels. Two saliency cues, intensity and compactness, are then proposed for the estimation of the saliency map of each individual superpixel at each level. The saliency maps at different levels over the same cues are fused using an averaging operator. The two saliency maps over different cues are fused using a pixel-wise multiplication operator. Leaking regions are finally detected by thresholding the saliency map followed by a graph-cut segmentation. The proposed method has been validated using the only two publicly available datasets: one for malarial retinopathy and the other for diabetic retinopathy. The experimental results show that it outperforms one of the latest competitors and performs as well as a human expert for leakage detection and outperforms several state-of-the-art methods for saliency detection.

Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N2 plasma surface treatment

NASA Astrophysics Data System (ADS)

Liu, Hui; Zhang, Zongjing; Luo, Weijun

2018-06-01

The mechanism of reverse gate leakage current of AlGaN/GaN HEMTs with two different surface treatment methods are studied by using C-V, temperature dependent I-V and theoretical analysis. At the lower reverse bias region (VR >- 3.5 V), the dominant leakage current mechanism of the device with N2 plasma surface treatment is the Poole-Frenkel emission current (PF), and Trap-Assisted Tunneling current (TAT) is the principal leakage current of the device which treated by HCl:H2O solution. At the higher reverse bias region (VR <- 3.5 V), both of the two samples show good agreement with the surface leakage mechanism. The leakage current of the device with N2 plasma surface treatment is one order of magnitude smaller than the device which treated by HCl:H2O solution. This is due to the recovery of Ga-N bond in N2 plasma surface treatment together with the reduction of the shallow traps in post-gate annealing (PGA) process. The measured results agree well with the theoretical calculations and demonstrate N2 plasma surface treatment can reduce the reverse leakage current of the AlGaN/GaN HEMTs.

Influence of thermal aging on AC leakage current in XLPE insulation

NASA Astrophysics Data System (ADS)

Geng, Pulong; Song, Jiancheng; Tian, Muqin; Lei, Zhipeng; Du, Yakun

2018-02-01

Cross-linked polyethylene (XLPE) has been widely used as cable insulation material because of its excellent dielectric properties, thermal stability and solvent resistance. To understand the influence of thermal aging on AC leakage current in XLPE insulation, all XLPE specimens were aged in oven in temperature range from 120 °C to 150 °C, and a series of tests were conducted on these XLPE specimens in different aging stages to measure the characteristic parameters, such as complex permittivity, leakage current and complex dielectric modulus. In the experiments, the effects of thermal aging, temperature and frequency on the AC leakage current in XLPE insulation were studied by analyzing complex dielectric constant and dielectric relaxation modulus spectrum, the change of relaxation peak and activation energy. It has been found that the active part of leakage current increases sharply with the increase of aging degree, and the test temperature and frequency have an influence on AC leakage current but the influence of test temperature is mainly reflected in the low frequency region. In addition, it has been shown by the experiments that the reactive part of leakage current exhibits a strong frequency dependent characteristic in the testing frequency range from 10-2 Hz to 105 Hz, but the influence of test temperature and thermal aging on it is relatively small.

Non-Ideal Properties of Gallium Nitride Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Shan, Qifeng

The spectacular development of gallium nitride (GaN) based light-emitting diodes (LEDs) in recent years foreshadows a new era for lighting. There are still several non-ideal properties of GaN based LEDs that hinder their widespread applications. This dissertation studies these non-ideal properties including the large reverse leakage current, large subthreshold forward leakage current, an undesired parasitic cyan luminescence and high-concentration deep levels in GaInN blue LEDs. This dissertation also studies the thermal properties of GaInN LEDs. Chapter 1 gives a brief introduction of non-ideal properties of GaN based LEDs. The leakage current of GaN based LEDs, defects in epitaxially grown GaN devices, and doping problems of p-type GaN materials are discussed. The transient junction temperature measurement technique for GaN based LEDs is introduced. The leakage current of an LED includes the subthreshold forward leakage current and the reverse leakage current. The leakage current of GaN based LEDs affects the reliability, electrostatic discharge resilience, and sub-threshold power consumption. In Chapter 2, the reverse leakage current of a GaInN LED is analyzed by temperaturedependent current-voltage measurements. At low temperature, the reverse leakage current is attributed to the variable-range-hopping conduction. At high temperature, the reverse leakage current is attributed to a thermally-assisted multi-step tunneling. The thermal activation energies (95 meV ~ 162 meV), extracted from the Arrhenius plot for the reverse current in the high-temperature range, indicate a thermally activated tunneling process. Additional room-temperature capacitance-voltage (C-V) measurements are performed to obtain information on the depletion width and doping concentration of the LED. The average internal electric field is estimated by the C-V measurements. The strong internal electric field enhances the thermal emission of electrons in the thermally-assisted multi-step tunneling process. Another problem of GaInN blue LEDs is the undesired parasitic cyan emission band. The undesired parasitic emission band strongly influence the electrical and optical properties of GaInN blue LEDs including the subthreshold forward leakage current and the color purity of the emission. In Chapter 3 , GaInN blue LEDs emitting at 445 nm with a parasitic cyan (blue-green) emission band (480 nm), which dominates the emission spectrum at low injection current, are analyzed. Photoluminescence using resonant optical excitation shows that the cyan emission originates from the active region of the LED. The current- and excitation-density-dependent blue-to-cyan intensity ratio reveals that the cyan emission is due to a transition from the conduction band to a Mg acceptor having diffused into the last-grown quantum well of the active region. The Mg in the active region provides an additional carrier-transport path, and therefore can explain the high subthreshold forward leakage current that is measured in these LEDs. Deep levels in GaN-based materials strongly affect the electrical and optical properties of GaN-based LEDs. Chapter 4 describes the basic principle and the setup of a deep-level transient spectroscopy (DLTS) measurement system. This DLTS system is used to determine the concentration and thermal activation energy of deep levels in the depletion region of the GaInN LED. Two types of hole traps in the n-type side of the depletion region are observed in the DLTS measurement. The thermal activation energies of these two types of hole traps are compared with the results reported in literature. The hole trap associated with the major DLTS peak with a thermal activation energy of 0.80 eV is presumably related to the “yellow luminescence band”. Self-heating of LEDs is an important issue that affects the efficiency and reliability. In Chapter 5, the thermal properties, including thermal time constants, of GaN LEDs are analyzed. The transient-junction-temperature behavior of unpackaged LED chips is described by a single time constant, which is the product of a thermal resistance Rth and a thermal capacitance Cth. Furthermore, a multistage RthCth thermal model for packaged LEDs is developed. The transient response of the junction temperature of LEDs after the power is switched on or switched off can be described by a multi-exponential function. Each time constant of this function is approximately the product of a thermal resistance, Rth, and a thermal capacitance, Cth. The transient junction temperature after the power is switched off is measured for a high-power flip-chip LED by the forward-voltage method. A two-stage RthCth model is used to analyze the thermal properties of the packaged LED. Two time constants, 2.72 ms and 18.7 ms are extracted from the junction temperature decay measurement and attributed to the thermal time constant of the LED GaN / sapphire chip and LED Si submount, respectively.

Field Test Evaluation of Conservation Retrofits of Low-Income, Single-Family Buildings in Wisconsin: Blower-Door-Directed Infiltration Reduction Procedure, Field Test Implementation and Results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gettings, M.B.

A blower-door-directed infiltration retrofit procedure was field tested on 18 homes in south central Wisconsin. The procedure, developed by the Wisconsin Energy Conservation Corporation, includes recommended retrofit techniques as well as criteria for estimating the amount of cost-effective work to be performed on a house. A recommended expenditure level and target air leakage reduction, in air changes per hour at 50 Pascal (ACH50), are determined from the initial leakage rate measured. The procedure produced an average 16% reduction in air leakage rate. For the 7 houses recommended for retrofit, 89% of the targeted reductions were accomplished with 76% of themore » recommended expenditures. The average cost of retrofits per house was reduced by a factor of four compared with previous programs. The average payback period for recommended retrofits was 4.4 years, based on predicted energy savings computed from achieved air leakage reductions. Although exceptions occurred, the procedure's 8 ACH50 minimum initial leakage rate for advising retrofits to be performed appeared a good choice, based on cost-effective air leakage reduction. Houses with initial rates of 7 ACH50 or below consistently required substantially higher costs to achieve significant air leakage reductions. No statistically significant average annual energy savings was detected as a result of the infiltration retrofits. Average measured savings were -27 therm per year, indicating an increase in energy use, with a 90% confidence interval of 36 therm. Measured savings for individual houses varied widely in both positive and negative directions, indicating that factors not considered affected the results. Large individual confidence intervals indicate a need to increase the accuracy of such measurements as well as understand the factors which may cause such disparity. Recommendations for the procedure include more extensive training of retrofit crews, checks for minimum air exchange rates to insure air quality, and addition of the basic cost of determining the initial leakage rate to the recommended expenditure level. Recommendations for the field test of the procedure include increasing the number of houses in the sample, more timely examination of metered data to detect anomalies, and the monitoring of indoor air temperature. Though not appropriate in a field test of a procedure, further investigation into the effects of air leakage rate reductions on heating loads needs to be performed.« less

Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime

NASA Astrophysics Data System (ADS)

Swami, Yashu; Rai, Sanjeev

2017-02-01

The high leakage current in nano-meter regimes is becoming a significant portion of power dissipation in nano-MOSFET circuits as threshold voltage, channel length, and gate oxide thickness are scaled down to nano-meter range. Precise leakage current valuation and meticulous modeling of the same at nano-meter technology scale is an increasingly a critical work in designing the low power nano-MOSFET circuits. We present a specific compact model for sub-threshold regime leakage current in bulk driven nano-MOSFETs. The proposed logical model is instigated and executed into the latest updated PTM bulk nano-MOSFET model and is found to be in decent accord with technology-CAD simulation data. This paper also reviews various transistor intrinsic leakage mechanisms for nano-MOSFET exclusively in weak inversion, like drain-induced barricade lowering (DIBL), gate-induced drain leakage (GIDL), gate oxide tunneling (GOT) leakage etc. The root cause of the sub-surface leakage current is mainly due to the nano-scale short channel length causing source-drain coupling even in sub-threshold domain. Consequences leading to carriers triumphing the barricade between the source and drain. The enhanced model effectively considers the following parameter dependence in the account for better-quality value-added results like drain-to-source bias (VDS), gate-to-source bias (VGS), channel length (LG), source/drain junction depth (Xj), bulk doping concentration (NBULK), and operating temperature (Top).

Simulation of leakage current measurement on medical devices using helmholtz coil configuration with different current flow

NASA Astrophysics Data System (ADS)

Sutanto, E.; Chandra, F.; Dinata, R.

2017-05-01

Leakage current measurement which can follow IEC standard for medical device is one of many challenges to be answered. The IEC 60601-1 has defined that the limit for a leakage current for Medical Device can be as low as 10 µA and as high as 500 µA, depending on which type of contact (applied part) connected to the patient. Most people are using ELCB (Earth-leakage circuit breaker) for safety purpose as this is the most common and available safety device in market. One type of ELCB devices is RCD (Residual Current Device) and this RCD type can measure the leakage current directly. This work will show the possibility on how Helmholtz Coil Configuration can be made to be like the RCD. The possibility is explored by comparing the magnetic field formula from each device, then it proceeds with a simulation using software EJS (Easy Java Simulation). The simulation will make sure the concept of magnetic field current cancellation follows the RCD concept. Finally, the possibility of increasing the measurement’s sensitivity is also analyzed. The sensitivity is needed to see the possibility on reaching the minimum leakage current limit defined by IEC, 0.01mA.

Low leakage current gate dielectrics prepared by ion beam assisted deposition for organic thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Chang Su; Jo, Sung Jin; Kim, Jong Bok; Ryu, Seung Yoon; Noh, Joo Hyon; Baik, Hong Koo; Lee, Se Jong; Kim, Youn Sang

2007-12-01

This communication reports on the fabrication of low operating voltage pentacene thin-film transistors with high-k gate dielectrics by ion beam assisted deposition (IBAD). These densely packed dielectric layers by IBAD show a much lower level of leakage current than those created by e-beam evaporation. These results, from the fact that those thin films deposited with low adatom mobility, have an open structure, consisting of spherical grains with pores in between, that acts as a significant path for leakage current. By contrast, our results demonstrate the potential to limit this leakage. The field effect mobility, on/off current ratio, and subthreshold slope obtained from pentacene thin-film transistors (TFTs) were 1.14 cm2/V s, 105, and 0.41 V/dec, respectively. Thus, the high-k gate dielectrics obtained by IBAD show promise in realizing low leakage current, low voltage, and high mobility pentacene TFTs.

Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide-Semiconductor Image Sensors.

PubMed

Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

2017-05-02

Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components.

Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide–Semiconductor Image Sensors

PubMed Central

Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

2017-01-01

Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components. PMID:28468324

Determination of secondhand smoke leakage from the smoking room of an Internet café.

PubMed

Kim, Hyejin; Lee, Kiyoung; An, Jaehoon; Won, Sungho

2017-10-01

Although Internet cafes have been designated as nonsmoking areas in Korea, smoke-free legislation has allowed the installation of indoor smoking rooms. The purposes of this study were to determine secondhand smoke (SHS) leakage from an Internet café smoking room and to identify factors associated with SHS leakage. PM 2.5 (particulate matter with an aerodynamic diameter ≤2.5 μm) mass concentrations were measured simultaneously both inside and outside the door to the smoking room. During each measurement, a field technician observed how long the smoking room door was opened and closed, the direction of door opening, and the number of smokers. A multivariate linear regression model was used to identify the causality of SHS leakage from the smoking room. A time series of PM 2.5 concentrations both inside and outside the door to the smoking room showed a similar trend. SHS leakage was significantly increased because of factors associated with the direction of the smoking room door being opened, the duration of how long the smoking room door was opened until it was closed, and the average PM 2.5 concentration inside the smoking room when the door was opened. SHS leakage from inside the smoking room to outside the smoking room was evident especially when the smoking room door was opened. Since the smoking room is not effective in preventing SHS exposure, the smoking room should be removed from the facilities to protect citizens from SHS exposure through revision of the current legislation, which permits installation of a smoking room. This paper concerns secondhand smoke (SHS) leakage from indoor smoking room. Unlike previous studies, the authors statistically analyzed the causality of PM 2.5 concentration leakage from a smoking room using time-series analysis. Since the authors selected the most common smoking room, the outcomes could be generalized. The study demonstrated that SHS leakage from smoking room and SHS leakage were clearly associated with door opening. The finding demonstrated ineffectiveness of smoking room to protect citizens and supports removal of indoor smoking room.

A Passive EMI Filter with Access to the Ungrounded Motor Neutral Line-Its Effect on Eliminating Leakage Current from the Inverter Heat Sink-

NASA Astrophysics Data System (ADS)

Doumoto, Takafumi; Akagi, Hirofumi

This paper deals with a leakage current flowing out of the heat sink of a voltage-source PWM inverter. The heat-sink leakage current is caused by a steep change in the common-mode voltage produced by the inverter. It flows through parasitic capacitors between the heat sink and power semiconductor devices when no EMI filter is connected. Experimental results reveal that the heat-sink leakage current flows not into the supply side, but into the motor side. These understandings succeed in describing an equivalent common-mode circuit taking the parasitic capacitors into account. The authors have proposed a passive EMI filter that is unique in access to the ungrounded motor neutral line. It is discussed from this equivalent circuit that the passive EMI filter is effective in preventing the leakage current from flowing. Moreover, installation of another small-sized common-mode inductor at the ac side of the diode rectifier prevents the leakage current from flowing into the supply side. Experimental results obtained from a 200-V, 3.7-kW laboratory system confirm the effectiveness and viability of the EMI filter.

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

NASA Astrophysics Data System (ADS)

Usami, Shigeyoshi; Ando, Yuto; Tanaka, Atsushi; Nagamatsu, Kentaro; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi; Sugawara, Yoshihiro; Yao, Yong-Zhao; Ishikawa, Yukari

2018-04-01

Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that 1c pure screw dislocations are related to the reverse leakage in vertical p-n diodes.

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Sang, Liwen; Ren, Bing; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Tanaka, Atsushi; Cho, Yujin; Harada, Yoshitomo; Nabatame, Toshihide; Sekiguchi, Takashi; Usami, Shigeyoshi; Honda, Yoshio; Amano, Hiroshi

2017-09-01

Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.

Detecting the leakage source of a reservoir using isotopes.

PubMed

Yi, Peng; Yang, Jing; Wang, Yongdong; Mugwanezal, Vincent de Paul; Chen, Li; Aldahan, Ala

2018-07-01

A good monitoring method is vital for understanding the sources of a water reservoir leakage and planning for effective restoring. Here we present a combination of several tracers ( 222 Rn, oxygen and hydrogen isotopes, anions and temperature) for identification of water leakage sources in the Pushihe pumped storage power station which is in the Liaoning province, China. The results show an average 222 Rn activity of 6843 Bq/m 3 in the leakage water, 3034 Bq/m 3 in the reservoir water, and 41,759 Bq/m 3 in the groundwater. Considering that 222 Rn activity in surface water is typically less than 5000 Bq/m 3 , the low level average 222 Rn activity in the leakage water suggests the reservoir water as the main source of water. Results of the oxygen and hydrogen isotopes show comparable ranges and values in the reservoir and the leakage water samples. However, important contribution of the groundwater (up to 36%) was present in some samples from the bottom and upper parts of the underground powerhouse, while the leakage water from some other parts indicate the reservoir water as the dominant source. The isotopic finding suggests that the reservoir water is the main source of the leakage water which is confirmed by the analysis of anions (nitrate, sulfate, and chloride) in the water samples. The combination of these tracer methods for studying dam water leakage improves the accuracy of identifying the source of leaks and provide a scientific reference for engineering solutions to ensure the dam safety. Copyright © 2018 Elsevier Ltd. All rights reserved.

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

NASA Astrophysics Data System (ADS)

Zheng, Xue-Feng; Fan, Shuang; Chen, Yong-He; Kang, Di; Zhang, Jian-Kun; Wang, Chong; Mo, Jiang-Hui; Li, Liang; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-02-01

The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor (HEMT) becomes one of the most important reliability issues with the downscaling of feature size. In this paper, the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K. Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current. By comparing the experimental data with the numerical transport models, it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current. However, good agreement is found between the experimental data and the two-dimensional variable range hopping (2D-VRH) model. Therefore, it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer. Moreover, the activation energy of surface leakage current is extracted, which is around 0.083 eV. Finally, the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied. It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV, which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206), the New Experiment Development Funds for Xidian University, China (Grant No. SY1213), the 111 Project, China (Grant No. B12026), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051325002).

Fabrication and Benchmarking of a Stratix V FPGA with Monolithic Integrated Microfluidic Cooling

DTIC Science & Technology

2017-03-01

run. The output from all cores were monitored through the Altera Signaltap tool in order to detect glitches which occurred in the output...dependence on temperature, and static/ leakage power, which comes from several components, such as subthreshold leakage , gate leakage , and reverse bias 220...junction current. Subthreshold leakage current tends to be the most significant temperature dependent component of the power [6,7] and is given by

Conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage.

PubMed

Kano, Shinya; Fujii, Minoru

2017-03-03

We study the conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage. Heat leakage current from a hot electrode to a cold electrode is taken into account in the analysis of the harvester operation. Modeling of electrical output indicates that a maximum heat leakage current is not negligible because it is larger than that of the heat current harvested into electrical power. A reduction of heat leakage is required in this energy harvester in order to obtain efficient heat-to-electrical conversion. Multiple energy levels of a quantum dot can increase the output power of the harvester. Heavily doped colloidal semiconductor quantum dots are a possible candidate for a quantum-dot monolayer in the energy harvester to reduce heat leakage, scaling down device size, and increasing electrical output via multiple discrete energy levels.

FELERION: a new approach for leakage power reduction

NASA Astrophysics Data System (ADS)

R, Anjana; Somkuwar, Ajay

2014-12-01

The circuit proposed in this paper simultaneously reduces the sub threshold leakage power and saves the state of art aspect of the logic circuits. Sleep transistors and PMOS-only logic are used to further reduce the leakage power. Sleep transistors are used as the keepers to reduce the sub threshold leakage current providing the low resistance path to the output. PMOS-only logic is used between the pull up and pull down devices to mitigate the leakage power further. Our proposed fast efficient leakage reduction circuit not only reduces the leakage current but also reduces the power dissipation. Power and delay are analyzed at the 32 nm BSIM4 model for a chain of four inverters, NAND, NOR and ISCAS-85 c17 benchmark circuits using DSCH3 and the Microwind tool. The simulation results reveal that our proposed approach mitigates leakage power by 90%-94% as compared to the conventional approach.

The ``Leakage Current Sentinel'': A novel plug-in socket device for online biomedical equipment electrical safety surveillance

NASA Astrophysics Data System (ADS)

Cappa, Paolo; Marinozzi, Franco; Sciuto, Salvatore Andrea

2000-07-01

The Leakage Current Sentinel (LCS) has been designed and implemented for the detection of hazardous situations caused by dangerous earth leakage current values in intensive care units and operating theaters. The device, designed and manufactured with full compliance of the high risk environment requirements, is able to monitor online the earth leakage current and detect ground wire faults. Operation utilizes a microammeter with an overall sensitivity of 2.5×104 V/A. In order to assure the reliability of the device in providing alarm signals, the simultaneous presence of absorbed power current is monitored by means of another ammeter with decreased sensitivity (3.0 V/A). The measured root mean square current values are compared with reference values in order to send signals to NAND and OR complementary metal-oxide-semiconductor gates to enable audible and visible alarms according to the possible hazardous cases examined in the article. The final LCS packaging was shaped as a wall socket adapter for common electromedical device power cord plugs, with particular attention to minimizing its dimensions and to provide analog voltage outputs for both measured leakage and power currents, in order to allow automatic data acquisition and computerized hazardous situation management. Finally, a personal computer based automatic measuring system has been configured to simultaneously monitor several LCSs installed in the same intensive care unit room and, as a consequence, to distinguish different hazardous scenarios and provide an adequate alert to the clinical personnel whose final decision is still required. The test results confirm the effectiveness and reliability of the LCS in giving an alert in case of leakage current anomalous values, either in case of a ground fault or in case of a dangerous leakage current.

Investigation of mercury thruster isolators. [service life

NASA Technical Reports Server (NTRS)

Mantenieks, M. A.

1973-01-01

Mercury ion thruster isolator lifetime tests were performed using different isolator materials and geometries. Tests were performed with and without the flow of mercury through the isolators in an oil diffusion pumped vacuum facility and cryogenically pumped bell jar. The onset of leakage current in isolators tested occurred in time intervals ranging from a few hours to many hundreds of hours. In all cases, surface contamination was responsible for the onset of leakage current and subsequent isolator failure. Rate of increase of leakage current and the leakage current level increased approximately exponentially with isolator temperature. Careful attention to shielding techniques and the elimination of sources of metal oxides appear to have eliminated isolator failures as a thruster life limiting mechanism.

Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO2 area ratio

NASA Astrophysics Data System (ADS)

Li, Jeng-Ting; Tsai, Ho-Lin; Lai, Wei-Yao; Hwang, Weng-Sing; Chen, In-Gann; Chen, Jen-Sue

2018-04-01

This study addresses the variation in gate-leakage current due to the Fowler-Nordheim (FN) tunneling of electrons through a SiO2 dielectric layer in zinc-tin oxide (ZTO) thin film transistors. It is shown that the gate-leakage current is not related to the absolute area of the ZTO active layer, but it is reduced by reducing the ZTO/SiO2 area ratio. The ZTO/SiO2 area ratio modulates the ZTO-SiO2 interface dipole strength as well as the ZTO-SiO2 conduction band offset and subsequently affects the FN tunneling current through the SiO2 layer, which provides a route that modifies the gate-leakage current.

SENSITIVITY OF THE HOUSE PRESSURE TEST FOR DUCT LEAKAGE TO VARIATIONS IN THE DISTRIBUTION OF AIR LEAKAGE IN THE HOUSE ENVELOPE

DOE Office of Scientific and Technical Information (OSTI.GOV)

ANDREWS,J.W.

1998-12-01

The house pressure test for air leakage in ducts calculates the signed difference between the supply and return leakage from the response of the air pressure in the house to operation of the system fan. The currently accepted version of this calculation was based on particular assumptions about how the house envelope leakage is distributed between the walls, ceiling, and floor. This report generalizes the equation to account for an arbitrary distribution of envelope leakage. It concludes that the currently accepted equation is usually accurate to within {+-}5%, but in a small proportion of cases the results may diverge bymore » 50% or more.« less

Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bochkareva, N. I.; Ivanov, A. M.; Klochkov, A. V.

2015-06-15

It is shown that the emission efficiency and the 1/f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode varies with increasing current. Analysis of the results shows that hopping transport via defect states across the n-type part of the space-charge region results in limitation of the current by the tunneling resistance at intermediate currents and shunting of the n-type barrier at high currents. The increase in the average number of tunneling electrons suppresses the 1/f current noise at intermediate currents. The strong growth in the density of current noise atmore » high currents, S{sub J} ∝ J{sup 3}, is attributed to a decrease in the average number of tunneling electrons as the n-type barrier decreases in height and width with increasing forward bias. The tunneling-recombination leakage current along extended defects grows faster than the tunneling injection current, which leads to emission efficiency droop.« less

The SSME seal test program: Leakage tests for helically-grooved seals

NASA Technical Reports Server (NTRS)

Childs, D. W.

1983-01-01

Helically grooved annular seal configurations were tested in highly turbulent flow to determine if reduced leakage and enhanced stability would result from the pumping action of the seal. It was found that: (1) leakage of a helically grooved seals decreases with running speed; (2) leakage reduction due to increased running speed is greater at lower values of R sub a; (3) an asymptote for leakage reduction is indicated with increasing running speed; (4) leakage is reduced by reducing the ridge (minimum) and average clearances; (5) leakage increases with increasing pitch angles and with increasing groove depth. Plain seals with smooth rotors and stators will leak more than a helically grooved seal. It was also found that plain seals with a rough rotor and a rough stator leak less than a properly designed helically grooved seal. A properly designed helically grooved seal consumes at least twice as much power as a conventional annular seal.

Degradation of Leakage Currents in Solid Tantalum Capacitors Under Steady-State Bias Conditions

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2010-01-01

Degradation of leakage currents in various types of solid tantalum capacitors under steady-state bias conditions was investigated at temperatures from 105 oC to 170 oC and voltages up to two times the rated voltage. Variations of leakage currents with time under highly accelerated life testing (HALT) and annealing, thermally stimulated depolarization currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. During HALT the currents increase gradually up to three orders of magnitude in some cases, and then stabilize with time. This degradation is reversible and annealing can restore the initial levels of leakage currents. The results are attributed to migration of positively charged oxygen vacancies in tantalum pentoxide films that diminish the Schottky barrier at the MnO2/Ta2O5 interface and increase electron injection. A simple model allows for estimation of concentration and mobility of oxygen vacancies based on the level of current degradation.

Leakage characterization of top select transistor for program disturbance optimization in 3D NAND flash

NASA Astrophysics Data System (ADS)

Zhang, Yu; Jin, Lei; Jiang, Dandan; Zou, Xingqi; Zhao, Zhiguo; Gao, Jing; Zeng, Ming; Zhou, Wenbin; Tang, Zhaoyun; Huo, Zongliang

2018-03-01

In order to optimize program disturbance characteristics effectively, a characterization approach that measures top select transistor (TSG) leakage from bit-line is proposed to quantify TSG leakage under program inhibit condition in 3D NAND flash memory. Based on this approach, the effect of Vth modulation of two-cell TSG on leakage is evaluated. By checking the dependence of leakage and corresponding program disturbance on upper and lower TSG Vth, this approach is validated. The optimal Vth pattern with high upper TSG Vth and low lower TSG Vth has been suggested for low leakage current and high boosted channel potential. It is found that upper TSG plays dominant role in preventing drain induced barrier lowering (DIBL) leakage from boosted channel to bit-line, while lower TSG assists to further suppress TSG leakage by providing smooth potential drop from dummy WL to edge of TSG, consequently suppressing trap assisted band-to-band tunneling current (BTBT) between dummy WL and TSG.

Groundwater Salinity Simulation of a Subsurface Reservoir in Taiwan

NASA Astrophysics Data System (ADS)

Fang, H. T.

2015-12-01

The subsurface reservoir is located in Chi-Ken Basin, Pescadores (a group islands located at western part of Taiwan). There is no river in these remote islands and thus the freshwater supply is relied on the subsurface reservoir. The basin area of the subsurface reservoir is 2.14 km2 , discharge of groundwater is 1.27×106m3 , annual planning water supplies is 7.9×105m3 , which include for domestic agricultural usage. The annual average temperature is 23.3oC, average moisture is 80~85%, annual average rainfall is 913 mm, but ET rate is 1975mm. As there is no single river in the basin; the major recharge of groundwater is by infiltration. Chi-Ken reservoir is the first subsurface reservoir in Taiwan. Originally, the water quality of the reservoir is good. The reservoir has had the salinity problem since 1991 and it became more and more serious from 1992 until 1994. Possible reason of the salinity problem was the shortage of rainfall or the leakage of the subsurface barrier which caused the seawater intrusion. The present study aimed to determine the leakage position of subsurface barrier that caused the salinity problem. In order to perform the simulation for different possible leakage position of the subsurface reservoir, a Groundwater Modeling System (GMS) is used to define soils layer data, hydro-geological parameters, initial conditions, boundary conditions and the generation of three dimension meshes. A three dimension FEMWATER(Yeh , 1996) numerical model was adopted to find the possible leakage position of the subsurface barrier and location of seawater intrusion by comparing the simulation of different possible leakage with the observations. 1.By assuming the leakage position in the bottom of barrier, the simulated numerical result matched the observation better than the other assumed leakage positions. It showed that the most possible leakage position was at the bottom of the barrier. 2.The research applied three dimension FEMWATER and GMS as an interface to input parameter. The simulation of water level and chloride concentration already showed the real situation, and the result can be applied to the future study of the Chi-Ken subsurface reservoir salinity problems.

Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and the effects on gate leakage characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kotani, Junji, E-mail: kotani.junji-01@jp.fujitsu.com; Yamada, Atsushi; Ishiguro, Tetsuro

2016-04-11

This paper reports on the electrical characterization of Ni/Au Schottky diodes fabricated on InAlN high-electron-mobility transistor (HEMT) structures grown on low dislocation density free-standing GaN substrates. InAlN HEMT structures were grown on sapphire and GaN substrates by metal-organic vapor phase epitaxy, and the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky diodes were investigated. Threading dislocation densities were determined to be 1.8 × 10{sup 4 }cm{sup −2} and 1.2 × 10{sup 9 }cm{sup −2} by the cathodoluminescence measurement for the HEMT structures grown on GaN and sapphire substrates, respectively. Leakage characteristics of Ni/Au Schottky diodes were compared between the two samples, andmore » a reduction of the leakage current of about three to four orders of magnitude was observed in the forward bias region. For the high reverse bias region, however, no significant improvement was confirmed. We believe that the leakage current in the low bias region is governed by a dislocation-related Frenkel–Poole emission, and the leakage current in the high reverse bias region originates from field emission due to the large internal electric field in the InAlN barrier layer. Our results demonstrated that the reduction of dislocation density is effective in reducing leakage current in the low bias region. At the same time, it was also revealed that another approach will be needed, for instance, band modulation by impurity doping and insertion of insulating layers beneath the gate electrodes for a substantial reduction of the gate leakage current.« less

Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.

PubMed

Oh, S K; Song, C G; Jang, T; Kim, Kwang-Choong; Jo, Y J; Kwak, J S

2013-03-01

This study examined the effect of electron-beam (E-beam) irradiation on the AIGaN/GaN HEMTs for the reduction of gate leakage. After E-beam irradiation, the gate leakage current significantly decreased from 2.68 x 10(-8) A to 4.69 x 10(-9) A at a drain voltage of 10 V. The maximum drain current density of the AIGaN/GaN HEMTs with E-beam irradiation increased 14%, and the threshold voltage exhibited a negative shift, when compared to that of the AIGaN/GaN HEMTs before E-beam irradiation. These results strongly suggest that the reduction of gate leakage current resulted from neutralization nitrogen vacancies and removing of oxygen impurities.

Design optimization of high frequency transformer with controlled leakage inductance for current fed dual active bridge converter

NASA Astrophysics Data System (ADS)

Jung, Tae-Uk; Kim, Myung-Hwan; Yoo, Jin-Hyung

2018-05-01

Current fed dual active bridge converters for photovoltaic generation may typically require a given leakage or extra inductance in order to provide proper control of the currents. Therefore, the many researches have been focused on the leakage inductance control of high frequency transformer to integrate an extra inductor. In this paper, an asymmetric winding arrangement to get the controlled leakage inductance for the high frequency transformer is proposed to improve the efficiency of the current fed dual active bridge converter. In order to accurate analysis, a coupled electromagnetic analysis model of transformer connected with high frequency switching circuit is used. A design optimization procedure for high efficiency is also presented using design analysis model, and it is verified by the experimental result.

Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

NASA Astrophysics Data System (ADS)

Kojima, Eiji; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Hosoi, Takuji; Watanabe, Heiji; Shiraishi, Kenji

2018-06-01

We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced gate leakage current and that VOVAl complexes in Al2O3 cause negative fixed charge. We revealed that the incorporation of N atoms into Al2O3 eliminates the VO defect levels, reducing the stress-induced gate leakage current. Moreover, this suppresses the formation of negatively charged VOVAl complexes. Therefore, AlON can reduce both stress-induced gate leakage current and negative fixed charge in wide-bandgap-semiconductor MOSFETs.

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

InP electroluminescence as a tool to directly monitor carrier leakage in InGaAsP/InP buried heterostructure lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stern, M.B.; Brody, E.; Sowell, B.

1987-12-15

Direct measurements of homojunction and heterojunction carrier leakage currents in InGaAsP/InP buried heterostructure lasers have been made by monitoring the electroluminescence (EL) at 0.96 ..mu..m in the InP confinement layers. These EL measurements show directly, for the first time, a correlation between homojunction leakage currents and the sublinearity in the 1.3-..mu..m light output-current characteristic. The observed decrease in the 0.96-..mu..m intensity with increasing p-dopant concentration is a direct confirmation that heterojunction leakage is reduced when the doping level in the p-InP confinement layer is increased.

Determination of the Steady State Leakage Current in Structures with Ferroelectric Ceramic Films

NASA Astrophysics Data System (ADS)

Podgornyi, Yu. V.; Vorotilov, K. A.; Sigov, A. S.

2018-03-01

Steady state leakage currents have been investigated in capacitor structures with ferroelectric solgel films of lead zirconate titanate (PZT) formed on silicon substrates with a lower Pt electrode. It is established that Pt/PZT/Hg structures, regardless of the PZT film thickness, are characterized by the presence of a rectifying contact similar to p-n junction. The steady state leakage current in the forward direction increases with a decrease in the film thickness and is determined by the ferroelectric bulk conductivity.

Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

NASA Astrophysics Data System (ADS)

Moon, Sung-Woon; Twynam, John; Lee, Jongsub; Seo, Deokwon; Jung, Sungdal; Choi, Hong Goo; Shim, Heejae; Yim, Jeong Soon; Roh, Sungwon D.

2014-06-01

We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal-oxide-semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0-700 V.

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2014 CFR

2014-04-01

... (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable... the electrical leakage current between any two points of an electrical system and to sound an alarm if...

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2013 CFR

2013-04-01

... (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable... the electrical leakage current between any two points of an electrical system and to sound an alarm if...

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2012 CFR

2012-04-01

... (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable... the electrical leakage current between any two points of an electrical system and to sound an alarm if...

Diffusive leakage of brine from aquifers during CO2 geological storage

NASA Astrophysics Data System (ADS)

Dejam, Morteza; Hassanzadeh, Hassan

2018-01-01

The area of investigation in this study is designed around an improved understanding of fundamentals of the diffusive leakage of brine from a storage aquifer into overlying and underlying low permeability layers during geosequestration of carbon dioxide (CO2) through development of a theoretical model. Here, we consider a two-dimensional domain in cylindrical coordinates, comprised of an aquifer and an overburden, where the interaction between the two media is handled by imposing the continuities of pressures and fluid fluxes at the aquifer-overburden interface. This coupled problem is solved by successive implementation of the Laplace and finite Hankel transforms. The developed solutions can be used to analyze diffusive leakage of brine from the aquifer into overburden and generate type curves for average pressures in the aquifer and overburden during injection and post injection periods. The results show that the leakage rate at early times is scaled with t1/2 while it remains constant at late times. It is also shown that the average pressure in the aquifer is scaled with t for short and long times. Moreover, the average pressure in the overburden is scaled with t at late times while it is scaled with t3/2 at early times. In addition, the results reveal that factors affecting diffusive leakage rate through intact overburden during CO2 storage are, in decreasing order of significance, thickness of overburden, thickness of aquifer, aquifer to overburden permeability ratio, and aquifer to overburden porosity ratio. However, thickness of aquifer has minimal effect on diffusive leakage of brine within post injection period. To evaluate the theoretical model, case studies for two potential sites in United Kingdom, one in Lincolnshire and the other one in the Firth of Forth, are conducted. The field studies show that the diffusive leakage from the aquifer into the overburden diminishes ∼40 years after the injection has ceased for Lincolnshire while it stops after ∼12 years for Firth of Forth. The average amount of the brine leaked from the aquifers per standard cubic meter (Sm3) of the injected CO2 through diffusive leakage was found to be 6.28 × 10-4 m3 of brine (or 0.330 kg of brine/kg of CO2) over ∼70 years for Lincolnshire and 4.59 × 10-4 m3 of brine (or 0.242 kg of brine/kg of CO2) over ∼42 years for Firth of Forth.

Effects of microstructural defects on the performance of base-metal multilayer ceramic capacitors

NASA Astrophysics Data System (ADS)

Samantaray, Malay M.

Multilayer ceramic capacitors (MLCCs), owing to their processing conditions, can exhibit microstructure defects such as electrode porosity and roughness. The effect of such extrinsic defects on the electrical performance of these devices needs to be understood in order to achieve successful miniaturization into the submicron dielectric layer thickness regime. Specifically, the presence of non-planar and discontinuous electrodes can lead to local field enhancements while the relative morphologies of two adjacent electrodes determine variations in the local dielectric thickness. To study the effects of electrode morphologies, an analytical approach is taken to calculate the electric field enhancement and leakage current with respect to an ideal parallel-plate capacitor. Idealized electrode defects are used to simulate the electric field distribution. It is shown that the electrode roughness causes both the electric field and the leakage current to increase with respect to that of the ideal flat parallel-plate capacitor. Moreover, finite element methods are used to predict electric field enhancements by as high as 100% within capacitor structures containing rough interfaces and porosity. To understand the influence of microstructural defects on field distributions and leakage current, the real three-dimensional microstructure of local regions in MLCCs are reconstructed using a serial-sectioning technique in the focused ion beam. These microstructures are then converted into a finite element model in order to simulate the perturbations in electric field due to the presence of electrode defects. The electric field is three times the average value, and this leads to increase in current density of these devices. It is also shown that increasing sintering rates of MLCCs leads to improved electrode morphology with smoother more continuous electrodes, which in turn leads to a decrease in electric field enhancement and calculated leakage current density. To simulate scaling effects, the dielectric layer thickness is reduced from 2.0mum to 0.5mum in the three-dimensional microstructure keeping the same electrode morphology. It is seen that the effect of microstructure defects is more pronounced as one approaches thinner layers, leading to higher local electric field concentrations and a concomitant drop in insulation resistance. It is also seen that the electric field values are as high as 3.8 times the average field in termination regions due the disintegrated structure of the electrodes. In order to assess the effect of microstructure on MLCC performance, two sets of multilayer capacitors subjected to two vastly different sintering rates of 150ºC/hr and 3000ºC/hr are compared for their electrical properties. Capacitors with higher electrode continuity exhibit proportionally higher capacitance, provided the grain size distributions are similar. From the leakage current measurements, it is found that the Schottky barrier at the electrode-dielectric interface controls the conduction mechanism. This barrier height is calculated to be 1.06 eV for slow-fired MLCCs and was 1.15 for fast-fired MLCCs. This shows that high concentration of electrode defects cause field perturbations and subsequent drop in the net Schottky barrier height. These results are further supported by frequency-dependent impedance measurements. With temperature dependence behavior of current-voltage trends we note that below temperatures of 135°C, the conduction is controlled by interfacial effects, whereas at higher temperatures it is consistent with bulk-controlled space charge limited current for the samples that are highly reoxidized. The final part of this work studies the various aspects of the initial stages of degradation of MLCCs. MLCCs subjected to unipolar and bipolar degradation are studied for changes in microstructure and electrical properties. With bipolar degradation studies new insights into degradation are gained. First, the ionic accumulation with oxygen vacancies at cathodes is only partially reversible. This has implications on the controlling interface with electronic conduction. Also, it is shown that oxygen vacancy accumulation near the cathodes leads to a drop in insulation resistance. The capacitance also increases with progressive steps of degradation due to the effective thinning of dielectric layer. The reduction in interfacial resistance is also confirmed by impedance analysis. Finally, it is observed that on degradation, the dominant leakage current mechanism changes from being controlled by cathodic injection of electrons to being controlled by their anodic extraction. (Abstract shortened by UMI.)

Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms

DOEpatents

Hoffbauer, Mark A.; Prettyman, Thomas H.

2001-01-01

Reduction of surface leakage current by surface passivation of Cd.sub.1-x Zn.sub.x Te and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (.about.3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.

47 CFR 76.611 - Cable television basic signal leakage performance criteria.

Code of Federal Regulations, 2014 CFR

2014-10-01

... average power level of the strongest cable television carrier on the system. (c) In paragraph (a)(1) and... 47 Telecommunication 4 2014-10-01 2014-10-01 false Cable television basic signal leakage...) BROADCAST RADIO SERVICES MULTICHANNEL VIDEO AND CABLE TELEVISION SERVICE Technical Standards § 76.611 Cable...

47 CFR 76.611 - Cable television basic signal leakage performance criteria.

Code of Federal Regulations, 2013 CFR

2013-10-01

... average power level of the strongest cable television carrier on the system. (c) In paragraph (a)(1) and... 47 Telecommunication 4 2013-10-01 2013-10-01 false Cable television basic signal leakage...) BROADCAST RADIO SERVICES MULTICHANNEL VIDEO AND CABLE TELEVISION SERVICE Technical Standards § 76.611 Cable...

47 CFR 76.611 - Cable television basic signal leakage performance criteria.

Code of Federal Regulations, 2012 CFR

2012-10-01

... average power level of the strongest cable television carrier on the system. (c) In paragraph (a)(1) and... 47 Telecommunication 4 2012-10-01 2012-10-01 false Cable television basic signal leakage...) BROADCAST RADIO SERVICES MULTICHANNEL VIDEO AND CABLE TELEVISION SERVICE Technical Standards § 76.611 Cable...

Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

NASA Technical Reports Server (NTRS)

Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

2007-01-01

We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

Energy breakdown in capacitive deionization.

PubMed

Hemmatifar, Ali; Palko, James W; Stadermann, Michael; Santiago, Juan G

2016-11-01

We explored the energy loss mechanisms in capacitive deionization (CDI). We hypothesize that resistive and parasitic losses are two main sources of energy losses. We measured contribution from each loss mechanism in water desalination with constant current (CC) charge/discharge cycling. Resistive energy loss is expected to dominate in high current charging cases, as it increases approximately linearly with current for fixed charge transfer (resistive power loss scales as square of current and charging time scales as inverse of current). On the other hand, parasitic loss is dominant in low current cases, as the electrodes spend more time at higher voltages. We built a CDI cell with five electrode pairs and standard flow between architecture. We performed a series of experiments with various cycling currents and cut-off voltages (voltage at which current is reversed) and studied these energy losses. To this end, we measured series resistance of the cell (contact resistances, resistance of wires, and resistance of solution in spacers) during charging and discharging from voltage response of a small amplitude AC current signal added to the underlying cycling current. We performed a separate set of experiments to quantify parasitic (or leakage) current of the cell versus cell voltage. We then used these data to estimate parasitic losses under the assumption that leakage current is primarily voltage (and not current) dependent. Our results confirmed that resistive and parasitic losses respectively dominate in the limit of high and low currents. We also measured salt adsorption and report energy-normalized adsorbed salt (ENAS, energy loss per ion removed) and average salt adsorption rate (ASAR). We show a clear tradeoff between ASAR and ENAS and show that balancing these losses leads to optimal energy efficiency. Copyright © 2016 Elsevier Ltd. All rights reserved.

Energy breakdown in capacitive deionization

DOE PAGES

Hemmatifar, Ali; Palko, James W.; Stadermann, Michael; ...

2016-08-12

We explored the energy loss mechanisms in capacitive deionization (CDI). We hypothesize that resistive and parasitic losses are two main sources of energy losses. We measured contribution from each loss mechanism in water desalination with constant current (CC) charge/discharge cycling. Resistive energy loss is expected to dominate in high current charging cases, as it increases approximately linearly with current for fixed charge transfer (resistive power loss scales as square of current and charging time scales as inverse of current). On the other hand, parasitic loss is dominant in low current cases, as the electrodes spend more time at higher voltages.more » We built a CDI cell with five electrode pairs and standard flow between architecture. We performed a series of experiments with various cycling currents and cut-off voltages (voltage at which current is reversed) and studied these energy losses. To this end, we measured series resistance of the cell (contact resistances, resistance of wires, and resistance of solution in spacers) during charging and discharging from voltage response of a small amplitude AC current signal added to the underlying cycling current. We performed a separate set of experiments to quantify parasitic (or leakage) current of the cell versus cell voltage. We then used these data to estimate parasitic losses under the assumption that leakage current is primarily voltage (and not current) dependent. Our results confirmed that resistive and parasitic losses respectively dominate in the limit of high and low currents. We also measured salt adsorption and report energy-normalized adsorbed salt (ENAS, energy loss per ion removed) and average salt adsorption rate (ASAR). As a result, we show a clear tradeoff between ASAR and ENAS and show that balancing these losses leads to optimal energy efficiency.« less

Leakage Currents and Gas Generation in Advanced Wet Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2015-01-01

Currently, military grade, established reliability wet tantalum capacitors are among the most reliable parts used for space applications. This has been achieved over the years by extensive testing and improvements in design and materials. However, a rapid insertion of new types of advanced, high volumetric efficiency capacitors in space systems without proper testing and analysis of degradation mechanisms might increase risks of failures. The specifics of leakage currents in wet electrolytic capacitors is that the conduction process is associated with electrolysis of electrolyte and gas generation resulting in building up of internal gas pressure in the parts. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. In this work, in Part I, leakages currents in various types of tantalum capacitors have been analyzed in a wide range of voltages, temperatures, and time under bias. Gas generation and the level of internal pressure have been calculated in Part II for different case sizes and different hermeticity leak rates to assess maximal allowable leakage currents. Effects related to electrolyte penetration to the glass seal area have been studied and the possibility of failures analyzed in Part III. Recommendations for screening and qualification to reduce risks of failures have been suggested.

Further Characterization of an Active Clearance Control Concept

NASA Technical Reports Server (NTRS)

Taylor, Shawn C.; Steinetz, Bruce M.; Oswald, Jay J.

2007-01-01

A new test chamber and precision hydraulic actuation system were incorporated into an active clearance control (ACC) test rig at NASA Glenn Research Center. Using the improved system, a fast-acting, mechanically-actuated, ACC concept was evaluated at engine simulated temperatures and pressure differentials up to 1140 F and 120 psig, on the basis of secondary seal leakage and kinematic controllability. During testing, the ACC concept tracked a simulated flight clearance transient profile at 1140 F, 120 psig, with a maximum error of only 0.0012 in. Comparison of average dynamic leakage of the system with average static leakage did not show significant differences between the two operating conditions. Calculated effective clearance values for the rig were approximately 0.0002 in. at 120 psig, well below the industry specified effective clearance threshold of 0.001 in.

Distribution of leakage currents in the cylindrical and conical sections of the magnetically insulated transmission line of the Angara-5-1 facility in experiments with wire arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grabovski, E. V.; Gribov, A. N.; Samokhin, A. A.

2016-08-15

Current leakages in the magnetically insulated transmission lines (MITL) impose restrictions on the transmission of electromagnetic pulses to the load in high-power electrophysical facilities. The multimodule Angara-5-1 facility with an output electric power of up to 6 TW is considered. In this work, the experimental and calculated profiles of leakage currents in two sections of the line are compared when the eight-module facility is loaded by a wire array. The azimuthal distribution of the current in the cylindrical section of the MITL is also considered.

Current transport mechanisms in mercury cadmium telluride diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Li, Qing; He, Jiale

This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation,more » flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.« less

Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Zhili; Song, Liang; Li, Weiyi; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Fan, Yaming; Deng, Xuguang; Li, Shuiming; Sun, Shichuang; Li, Xiajun; Yuan, Jie; Sun, Qian; Dong, Zhihua; Cai, Yong; Zhang, Baoshun

2017-08-01

In this paper, we systematically investigated the leakage mechanism of the ion-implantation isolated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate. By means of combined DC tests at different temperatures and electric field dependence, we demonstrated the following original results: (1) It is proved that gate leakage is the main contribution to OFF-state leakage of ion-implantation isolated AlGaN/GaN MIS-HEMTs, and the gate leakage path is a series connection of the gate dielectric Si3N4 and Si3N4-GaN interface. (2) The dominant mechanisms of the leakage current through LPCVD-Si3N4 gate dielectric and Si3N4-GaN interface are identified to be Frenkel-Poole emission and two-dimensional variable range hopping (2D-VRH), respectively. (3) A certain temperature annealing could reduce the density of the interface state that produced by ion implantation, and consequently suppress the interface leakage transport, which results in a decrease in OFF-state leakage current of ion-implantation isolated AlGaN/GaN MIS-HEMTs.

SU-F-T-366: Dosimetric Parameters Enhancement of 120-Leaf Millennium MLC Using EGSnrc and IAEA Phase-Space Data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haddad, K; Alopoor, H

Purpose: Recently, the multileaf collimators (MLC) have become an important part of any LINAC collimation systems because they reduce the treatment planning time and improves the conformity. Important factors that affects the MLCs collimation performance are leaves material composition and their thickness. In this study, we investigate the main dosimetric parameters of 120-leaf Millennium MLC including dose in the buildup point, physical penumbra as well as average and end leaf leakages. Effects of the leaves geometry and density on these parameters are evaluated Methods: From EGSnrc Monte Carlo code, BEAMnrc and DOSXYZnrc modules are used to evaluate the dosimetric parametersmore » of a water phantom exposed to a Varian xi for 100cm SSD. Using IAEA phasespace data just above MLC (Z=46cm) and BEAMnrc, for the modified 120-leaf Millennium MLC a new phase space data at Z=52cm is produces. The MLC is modified both in leaf thickness and material composition. EGSgui code generates 521ICRU library for tungsten alloys. DOSXYZnrc with the new phase space evaluates the dose distribution in a water phantom of 60×60×20 cm3 with voxel size of 4×4×2 mm3. Using DOSXYZnrc dose distributions for open beam and closed beam as well as the leakages definition, end leakage, average leakage and physical penumbra are evaluated. Results: A new MLC with improved dosimetric parameters is proposed. The physical penumbra for proposed MLC is 4.7mm compared to 5.16 mm for Millennium. Average leakage in our design is reduced to 1.16% compared to 1.73% for Millennium, the end leaf leakage suggested design is also reduced to 4.86% compared to 7.26% of Millennium. Conclusion: The results show that the proposed MLC with enhanced dosimetric parameters could improve the conformity of treatment planning.« less

Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

NASA Astrophysics Data System (ADS)

Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

2016-08-01

To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al2O3 films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al2O3 metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO2 capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al2O3 capacitors are found to outperform the SiO2 capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al2O3 interface. The Al2O3 electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al2O3 capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al2O3. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al2O3 capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al2O3/underlying SiO2 interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al2O3 films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al2O3 films.

Imaging Polarimetry in Central Serous Chorioretinopathy

PubMed Central

MIURA, MASAHIRO; ELSNER, ANN E.; WEBER, ANKE; CHENEY, MICHAEL C.; OSAKO, MASAHIRO; USUI, MASAHIKO; IWASAKI, TAKUYA

2006-01-01

PURPOSE To evaluate a noninvasive technique to detect the leakage point of central serous chorioretinopathy (CSR), using a polarimetry method. DESIGN Prospective cohort study. METHODS SETTING Institutional practice. PATIENTS We examined 30 eyes of 30 patients with CSR. MAIN OUTCOME MEASURES Polarimetry images were recorded using the GDx-N (Laser Diagnostic Technologies). We computed four images that differed in their polarization content: a depolarized light image, an average reflectance image, a parallel polarized light image, and a birefringence image. Each polarimetry image was compared with abnormalities seen on fluorescein angiography. RESULTS In all eyes, leakage area could be clearly visualized as a bright area in the depolarized light images. Michelson contrasts for the leakage areas were 0.58 ± 0.28 in the depolarized light images, 0.17 ± 0.11 in the average reflectance images, 0.09 ± 0.09 in the parallel polarized light images, and 0.11 ± 0.21 in the birefringence images from the same raw data. Michelson contrasts in depolarized light images were significantly higher than for the other three images (P < .0001, for all tests, paired t test). The fluid accumulated in the retina was well-visualized in the average and parallel polarized light images. CONCLUSIONS Polarization-sensitive imaging could readily localize the leakage point and area of fluid in CSR. This may assist with the rapid, noninvasive assessment of CSR. PMID:16376644

R-134a emissions from vehicles.

PubMed

Siegl, W O; Wallington, T J; Guenther, M T; Henney, T; Pawlak, D; Duffy, M

2002-02-15

We report the first study of R-134a (also known as HFC-134a and CF3CFH2) refrigerant leakage from air conditioning (AC) systems of modern vehicles. Twenty-eight light duty vehicles from five manufacturers (Ford, Toyota, Daimler Chrysler, General Motors, and Honda) were tested according to the USEPA (Federal) extended diurnal test procedure using the Sealed Housing for Evaporative Determination (SHED) apparatus. All tests were conducted using stationary vehicles with the motor and air conditioning system turned off. R-134a was measured using gas chromatography (GC) with a flame ionization detector (FID). All vehicles exhibited measurable R-134a leakage over the 2-day diurnal test. Leak rates of R-134a ranged from 0.01 to 0.36 g/day with an average of 0.07+/-0.07 g/day. When combined with leakage associated with vehicle operation, servicing, and disposal we estimate that the lifetime average R-134a emission rate from an AC equipped vehicle is 0.41+/-0.27 g/day (the majority of emissions are associated with vehicle servicing and disposal). Assuming that the average vehicle travels 10 000 miles per year we estimate that the global warming impact of R-134a leakage from an AC equipped vehicle is approximately 4-5% of that of the CO2 emitted by the vehicle. The results are discussed with respect to the contribution of vehicle emissions to global climate change.

Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates

NASA Technical Reports Server (NTRS)

Neudeck, P. G.; Carpenter, M. S.; Melloch, Michael R.; Cooper, James A., Jr.

1991-01-01

Ammonium-sulfide (NH4)2S treated gates have been employed in the fabrication of GaAs MESFETs that exhibit a remarkable reduction in subthreshold leakage current. A greater than 100-fold reduction in drain current minimum is observed due to a decrease in Schottky gate leakage. The electrical characteristics have remained stable for over a year during undesiccated storage at room temperature, despite the absence of passivation layers.

Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Hejazi, M. M.; Safari, A.

2011-11-01

This paper discusses the electrical conduction mechanisms in a 0.88 Bi0.5Na0.5TiO3-0.08 Bi0.5K0.5TiO3-0.04 BaTiO3 thin film in the temperature range of 200-350 K. The film was deposited on a SrRuO3/SrTiO3 substrate by pulsed laser deposition technique. At all measurement temperatures, the leakage current behavior of the film matched well with the Lampert's triangle bounded by three straight lines of different slopes. The relative location of the triangle sides varied with temperature due to its effect on the density of charge carriers and un-filled traps. At low electric fields, the ohmic conduction governed the leakage mechanism. The calculated activation energy of the trap is 0.19 eV implying the presence of shallow traps in the film. With increasing the applied field, an abrupt increase in the leakage current was observed. This was attributed to a trap-filling process by the injected carriers. At sufficiently high electric fields, the leakage current obeyed the Child's trap-free square law suggesting the space charge limited current was the dominant mechanism.

Analysis and modeling of leakage current sensor under pulsating direct current

NASA Astrophysics Data System (ADS)

Li, Kui; Dai, Yihua; Wang, Yao; Niu, Feng; Chen, Zhao; Huang, Shaopo

2017-05-01

In this paper, the transformation characteristics of current sensor under pulsating DC leakage current is investigated. The mathematical model of current sensor is proposed to accurately describe the secondary side current and excitation current. The transformation process of current sensor is illustrated in details and the transformation error is analyzed from multi aspects. A simulation model is built and a sensor prototype is designed to conduct comparative evaluation, and both simulation and experimental results are presented to verify the correctness of theoretical analysis.

Apparatus for detecting leakage of liquid sodium

DOEpatents

Himeno, Yoshiaki

1978-01-01

An apparatus for detecting the leakage of liquid sodium includes a cable-like sensor adapted to be secured to a wall of piping or other equipment having sodium on the opposite side of the wall, and the sensor includes a core wire electrically connected to the wall through a leak current detector and a power source. An accidental leakage of the liquid sodium causes the corrosion of a metallic layer and an insulative layer of the sensor by products resulted from a reaction of sodium with water or oxygen in the atmospheric air so as to decrease the resistance between the core wire and the wall. Thus, the leakage is detected as an increase in the leaking electrical current. The apparatus is especially adapted for use in detecting the leakage of liquid sodium from sodium-conveying pipes or equipment in a fast breeder reactor.

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PubMed Central

Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan

2015-01-01

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc. PMID:26039589

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PubMed

Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan

2015-01-01

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc.

Estimating the environmental and resource costs of leakage in water distribution systems: A shadow price approach.

PubMed

Molinos-Senante, María; Mocholí-Arce, Manuel; Sala-Garrido, Ramon

2016-10-15

Water scarcity is one of the main problems faced by many regions in the XXIst century. In this context, the need to reduce leakages from water distribution systems has gained almost universal acceptance. The concept of sustainable economic level of leakage (SELL) has been proposed to internalize the environmental and resource costs within economic level of leakage calculations. However, because these costs are not set by the market, they have not often been calculated. In this paper, the directional-distance function was used to estimate the shadow price of leakages as a proxy of their environmental and resource costs. This is a pioneering approach to the economic valuation of leakage externalities. An empirical application was carried out for the main Chilean water companies. The estimated results indicated that for 2014, the average shadow price of leakages was approximately 32% of the price of the water delivered. Moreover, as a sensitivity analysis, the shadow prices of the leakages were calculated from the perspective of the water companies' managers and the regulator. The methodology and findings of this study are essential for supporting the decision process of reducing leakage, contributing to the improvement of economic, social and environmental efficiency and sustainability of urban water supplies. Copyright © 2016 Elsevier B.V. All rights reserved.

Building America Case Study: Apartment Compartmentalization with an Aerosol-Based Sealing Process - Queens, NY; Technology Solutions for New and Existing Homes, Energy Efficiency & Renewable Energy (EERE)

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2015-07-01

Air sealing of building enclosures is a difficult and time-consuming process. Current methods in new construction require laborers to physically locate small and sometimes large holes in multiple assemblies and then manually seal each of them. The innovation demonstrated under this research study was the automated air sealing and compartmentalization of buildings through the use of an aerosolized sealant, developed by the Western Cooling Efficiency Center at University of California Davis.CARB sought to demonstrate this new technology application in a multifamily building in Queens, NY. The effectiveness of the sealing process was evaluated by three methods: air leakage testing ofmore » overall apartment before and after sealing, point-source testing of individual leaks, and pressure measurements in the walls of the target apartment during sealing. Aerosolized sealing was successful by several measures in this study. Many individual leaks that are labor-intensive to address separately were well sealed by the aerosol particles. In addition, many diffuse leaks that are difficult to identify and treat were also sealed. The aerosol-based sealing process resulted in an average reduction of 71% in air leakage across three apartments and an average apartment airtightness of 0.08 CFM50/SF of enclosure area.« less

Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor

NASA Astrophysics Data System (ADS)

KhademHosseini, Vahideh; Dideban, Daryoosh; Ahmadi, MohammadTaghi; Ismail, Razali

2018-05-01

Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other hand, co-tunneling process increases leakage current, so it reduces main current and reliability of SET. Due to co-tunneling phenomenon, main characteristics of fullerene SET with multiple islands are modelled in this research. Its performance is compared with silicon SET and consequently, research result reports that fullerene SET has lower leakage current and higher reliability than silicon counterpart. Based on the presented model, lower co-tunneling current is achieved by selection of fullerene as SET island material which leads to smaller value of the leakage current. Moreover, island length and the number of islands can affect on co-tunneling and then they tune the current flow in SET.

Comparison of the Standard of Air Leakage in Current Metal Duct Systems in the World

NASA Astrophysics Data System (ADS)

Di, Yuhui; Wang, Jiqian; Feng, Lu; Li, Xingwu; Hu, Chunlin; Shi, Junshe; Xu, Qingsong; Qiao, Leilei

2018-01-01

Based on the requirements of air leakage of metal ducts in Chinese design standards, technical measures and construction standards, this paper compares the development history, the classification of air pressure levels and the air tightness levels of air leakage standards of current Chinese and international metal ducts, sums up the differences, finds shortage by investigating the design and construction status and access to information, and makes recommendations, hoping to help the majority of engineering and technical personnel.

Effects of improper source coupling in frequency-domain near-infrared spectroscopy

NASA Astrophysics Data System (ADS)

Noponen, T. E. J.; Kotilahti, K.; Nissilä, I.; Kajava, T.; Meriläinen, P. T.

2010-05-01

Currently, there is no widely used method to assess the reliability of contact between optodes and tissue in near-infrared spectroscopy (NIRS). In this study we observe a high linear dependence (R2 ~ 0.99) of the logarithmic modulation amplitude (ln(IAC)), average intensity (ln(IDC)) and phase (phi) on the source-detector distance (SDD) ranging from ~20 to 50 mm on human forehead measurements. The regression of phi is clearly reduced in measurements where light leakage occurs, mainly due to insufficient contact between the source optode and tissue. Utilizing this observation, a novel criterion to detect light leakage is developed. The criterion is applied to study the reliability of hemodynamic responses measured on the human forehead when breathing carbon dioxide-enriched air and during hyperventilation. The contrast of the signals is significantly lower in measurements which were adversely affected by light leakage. Furthermore, such unreliable signals at SDDs >= 50 mm correlate significantly (for \\rm [HbO_2] p < 0.01 and for [HbR] p < 0.001) better with the signals measured at SDDs < 20 mm. Using this method, poor contact between the source optode and tissue can be detected and corrected before the actual measurement, which enables us to avoid the acquisition of low contrast cortical signals.

Hydrophobicity and leakage current statistics of polymeric insulators long-term exposed to coastal contamination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soerqvist, T.; Vlastos, A.E.

1996-12-31

The hydrophobicity of polymeric insulators is crucial for their performance. This paper reports the hydrophobicity and the peak leakage current statistics of one porcelain, two ethylene-propylene-diene monomer (EPDM) and four silicone rubber (SIR) commercially available insulators. The insulators have been energized with 130 kV rms phase-to-ground AC voltage under identical outdoor conditions for more than seven years. The results presented show that under wet and polluted conditions the hydrophilic EPDM rubber insulators develop high leakage currents and substantial arcing. During a typical salt-storm the arcing amplitude of the EPDM rubber insulators is at least twice as high as that ofmore » the porcelain insulator. The SIR insulators, on the other hand, preserve a high degree of hydrophobicity after more than seven years in service and maintain very low leakage currents. However, the results show that during heavy salt contaminated conditions a highly stressed SIR insulator can temporarily lose its hydrophobicity and thereby develop considerable surface arcing.« less

Effect of Compressive Stresses on Leakage Currents in Microchip Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2012-01-01

Microchip tantalum capacitors are manufactured using new technologies that allow for production of small size capacitors (down to EIA case size 0402) with volumetric efficiency much greater than for regular chip capacitors. Due to a small size of the parts and leadless design they might be more sensitive to mechanical stresses that develop after soldering onto printed wiring boards (PWB) compared to standard chip capacitors. In this work, the effect of compressive stresses on leakage currents in capacitors has been investigated in the range of stresses up to 200 MPa. Significant, up to three orders of magnitude, variations of currents were observed after the stress exceeds a certain critical level that varied from 10 MPa to 180 MPa for capacitors used in this study. A stress-induced generation of electron traps in tantalum pentoxide dielectric is suggested to explain reversible variations of leakage currents in tantalum capacitors. Thermo-mechanical characteristics of microchip capacitors have been studied to estimate the level of stresses caused by assembly onto PWB and assess the risk of stress-related degradation and failures. Keywords: tantalum capacitors, leakage current, soldering, reliability, mechanical stress.

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Portable leakage current alarm. 870.2640 Section 870.2640 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable...

21 CFR 870.2640 - Portable leakage current alarm.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Portable leakage current alarm. 870.2640 Section 870.2640 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Monitoring Devices § 870.2640 Portable...

Printed Circuit Board Surface Finish and Effects of Chloride Contamination, Electric Field, and Humidity on Corrosion Reliability

NASA Astrophysics Data System (ADS)

Conseil-Gudla, Hélène; Jellesen, Morten S.; Ambat, Rajan

2017-02-01

Corrosion reliability is a serious issue today for electronic devices, components, and printed circuit boards (PCBs) due to factors such as miniaturization, globalized manufacturing practices which can lead to process-related residues, and global usage effects such as bias voltage and unpredictable user environments. The investigation reported in this paper focuses on understanding the synergistic effect of such parameters, namely contamination, humidity, PCB surface finish, pitch distance, and potential bias on leakage current under different humidity levels, and electrochemical migration probability under condensing conditions. Leakage currents were measured on interdigitated comb test patterns with three different types of surface finish typically used in the electronics industry, namely gold, copper, and tin. Susceptibility to electrochemical migration was studied under droplet conditions. The level of base leakage current (BLC) was similar for the different surface finishes and NaCl contamination levels up to relative humidity (RH) of 65%. A significant increase in leakage current was found for comb patterns contaminated with NaCl above 70% to 75% RH, close to the deliquescent RH of NaCl. Droplet tests on Cu comb patterns with varying pitch size showed that the initial BLC before dendrite formation increased with increasing NaCl contamination level, whereas electrochemical migration and the frequency of dendrite formation increased with bias voltage. The effect of different surface finishes on leakage current under humid conditions was not very prominent.

The Random Telegraph Signal Behavior of Intermittently Stuck Bits in SDRAMs

NASA Astrophysics Data System (ADS)

Chugg, Andrew Michael; Burnell, Andrew J.; Duncan, Peter H.; Parker, Sarah; Ward, Jonathan J.

2009-12-01

This paper reports behavior analogous to the Random Telegraph Signal (RTS) seen in the leakage currents from radiation induced hot pixels in Charge Coupled Devices (CCDs), but in the context of stuck bits in Synchronous Dynamic Random Access Memories (SDRAMs). Our analysis suggests that pseudo-random sticking and unsticking of the SDRAM bits is due to thermally induced fluctuations in leakage current through displacement damage complexes in depletion regions that were created by high-energy neutron and proton interactions. It is shown that the number of observed stuck bits increases exponentially with temperature, due to the general increase in the leakage currents through the damage centers with temperature. Nevertheless, some stuck bits are seen to pseudo-randomly stick and unstick in the context of a continuously rising trend of temperature, thus demonstrating that their damage centers can exist in multiple widely spaced, discrete levels of leakage current, which is highly consistent with RTS. This implies that these intermittently stuck bits (ISBs) are a displacement damage phenomenon and are unrelated to microdose issues, which is confirmed by the observation that they also occur in unbiased irradiation. Finally, we note that observed variations in the periodicity of the sticking and unsticking behavior on several timescales is most readily explained by multiple leakage current pathways through displacement damage complexes spontaneously and independently opening and closing under the influence of thermal vibrations.

Universality of Non-Ohmic Shunt Leakage in Thin-Film Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dongaonkar, S.; Servaites, J.D.; Ford, G.M.

2010-01-01

We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In,Ga)Se 2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (V<~0.4) and reverse bias, which cannot be explained by the classical solar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (I sh) , across all three solar cell types considered, is characterized by the following commonmore » phenomenological features: (a) voltage symmetry about V=0 , (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from the measured data and discuss its implications on dark IV parameter extraction. We propose a space charge limited (SCL) current model for capturing all these features of the shunt leakage in a consistent framework and discuss possible physical origin of the parasitic paths responsible for this shunt current mechanism.« less

Module Hipot and ground continuity test results

NASA Technical Reports Server (NTRS)

Griffith, J. S.

1984-01-01

Hipot (high voltage potential) and module frame continuity tests of solar energy conversion modules intended for deployment into large arrays are discussed. The purpose of the tests is to reveal potentially hazardous voltage conditions in installed modules, and leakage currents that may result in loss of power or cause ground fault system problems, i.e., current leakage potential and leakage voltage distribution. The tests show a combined failure rate of 36% (69% when environmental testing is included). These failure rates are believed easily corrected by greater care in fabrication.

a High-Level Technique for Estimation and Optimization of Leakage Power for Full Adder

NASA Astrophysics Data System (ADS)

Shrivas, Jayram; Akashe, Shyam; Tiwari, Nitesh

2013-06-01

Optimization of power is a very important issue in low-voltage and low-power application. In this paper, we have proposed power gating technique to reduce leakage current and leakage power of one-bit full adder. In this power gating technique, we use two sleep transistors i.e., PMOS and NMOS. PMOS sleep transistor is inserted between power supply and pull up network. And NMOS sleep transistor is inserted between pull down network and ground terminal. These sleep transistors (PMOS and NMOS) are turned on when the circuit is working in active mode. And sleep transistors (PMOS and NMOS) are turned off when circuit is working in standby mode. We have simulated one-bit full adder and compared with the power gating technique using cadence virtuoso tool in 45 nm technology at 0.7 V at 27°C. By applying this technique, we have reduced leakage current from 2.935 pA to 1.905 pA and leakage power from 25.04μw to 9.233μw. By using this technique, we have reduced leakage power up to 63.12%.

Uncertainty analysis of gas flow measurements using clearance-sealed piston provers in the range from 0.0012 g min-1 to 60 g min-1

NASA Astrophysics Data System (ADS)

Bobovnik, G.; Kutin, J.; Bajsić, I.

2016-08-01

This paper deals with an uncertainty analysis of gas flow measurements using a compact, high-speed, clearance-sealed realization of a piston prover. A detailed methodology for the uncertainty analysis, covering the components due to the gas density, dimensional and time measurements, the leakage flow, the density correction factor and the repeatability, is presented. The paper also deals with the selection of the isothermal and adiabatic measurement models, the treatment of the leakage flow and discusses the need for averaging multiple consecutive readings of the piston prover. The analysis is prepared for the flow range (50 000:1) covered by the three interchangeable flow cells. The results show that using the adiabatic measurement model and averaging the multiple readings, the estimated expanded measurement uncertainty of the gas mass flow rate is less than 0.15% in the flow range above 0.012 g min-1, whereas it increases for lower mass flow rates due to the leakage flow related effects. At the upper end of the measuring range, using the adiabatic instead of the isothermal measurement model, as well as averaging multiple readings, proves important.

Field size dependent mapping of medical linear accelerator radiation leakage

NASA Astrophysics Data System (ADS)

Vũ Bezin, Jérémi; Veres, Attila; Lefkopoulos, Dimitri; Chavaudra, Jean; Deutsch, Eric; de Vathaire, Florent; Diallo, Ibrahima

2015-03-01

The purpose of this study was to investigate the suitability of a graphics library based model for the assessment of linear accelerator radiation leakage. Transmission through the shielding elements was evaluated using the build-up factor corrected exponential attenuation law and the contribution from the electron guide was estimated using the approximation of a linear isotropic radioactive source. Model parameters were estimated by a fitting series of thermoluminescent dosimeter leakage measurements, achieved up to 100 cm from the beam central axis along three directions. The distribution of leakage data at the patient plane reflected the architecture of the shielding elements. Thus, the maximum leakage dose was found under the collimator when only one jaw shielded the primary beam and was about 0.08% of the dose at isocentre. Overall, we observe that the main contributor to leakage dose according to our model was the electron beam guide. Concerning the discrepancies between the measurements used to calibrate the model and the calculations from the model, the average difference was about 7%. Finally, graphics library modelling is a readily and suitable way to estimate leakage dose distribution on a personal computer. Such data could be useful for dosimetric evaluations in late effect studies.

Effect of Mechanical Stresses on Characteristics of Chip Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2007-01-01

The effect of compressive mechanical stresses on chip solid tantalum capacitors is investigated by monitoring characteristics of different part types under axial and hydrostatic stresses. Depending on part types, an exponential increase of leakage currents was observed when stresses exceeded 10 MPa to 40 MPa. For the first time, reversible variations of leakage currents (up to two orders of magnitude) with stress have been demonstrated. Mechanical stresses did not cause significant changes of AC characteristics of the capacitors, whereas breakdown voltages measured during the surge current testing decreased substantially indicating an increased probability of failures of stressed capacitors in low impedance applications. Variations of leakage currents are explained by a combination of two mechanisms: stress-induced scintillations and stress-induced generation of electron traps in the tantalum pentoxide dielectric.

Reduction of leakage current at the gate edge of SDB SOI NMOS transistor

NASA Astrophysics Data System (ADS)

Kang, Sung-Weon; Lyu, Jong-Son; Kang, Jin-Young; Kang, Sang-Won; Lee, Jin-Hyo

1995-06-01

Leakage current through the parasitic channel formed at the sidewall of the SOI active region has been investigated by measuring the subthreshold I-V characteristics. Partially depleted (PD, approximately 2500 Angstrom) and fully depleted (FD, approximately 800 Angstrom) SOI NMOS transistors of enhancement mode have been fabricated using the silicon direct bonding (SDB) technology. Isolation processes for the SOI devices were LOCOS, LOCOS with channel stop ion implantation or fully recessed trench (FRT). The electron concentration of the parasitic channel is calculated by the PISCES Ilb simulation. As a result, leakage current of the FD mode SOI device with FRT isolation at the front and back gate biases of 0 V was reduced to approximately pA and no hump was seen on the drain current curve.

The role of localized junction leakage in the temperature-dependent laser-beam-induced current spectra for HgCdTe infrared focal plane array photodiodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, A. L.; Li, G., E-mail: liguang1971@ahu.edu.cn, E-mail: xschen@mail.sitp.ac.cn; He, G.

2013-11-07

We have performed the study on the dependence of laser beam induced current (LBIC) spectra on the temperature for the vacancy-doped molecular beam epitaxy grown Hg{sub 1−x}Cd{sub x}Te (x = 0.31) photodiodes by both experiment and numerical simulations. It is found that the measured LBIC signal has different distributions for different temperature extents. The LBIC profile tends to be more asymmetric with increasing temperature below 170 K. But the LBIC profile becomes more symmetric with increasing temperature above 170 K. Based on a localized leakage model, it is indicated that the localized junction leakage can lead to asymmetric LBIC signal, in good agreement withmore » the experimental data. The reason is that the trap-assisted tunneling current is the dominant leakage current at the cryogenic temperature below 170 K while the diffusion current component becomes dominant above the temperature of 170 K. The results are helpful for us to better clarify the mechanism of the dependence of LBIC spectra on temperature for the applications of HgCdTe infrared photodiodes.« less

Preparation and properties of sol-gel derived PZT thin films for decoupling capacitor applications

NASA Astrophysics Data System (ADS)

Schwartz, R. W.; Dimos, D.; Lockwood, S. J.; Torres, V. M.

The use of ceramic thin films as decoupling capacitors offers the possibility of capacitor integration within the integrated circuit (IC) package and, potentially, directly onto the IC itself. Since these configurations minimize series inductance, higher operational speeds are possible. In the present study, the authors have investigated the dielectric and leakage characteristics of sol-gel PZT films. For compositions near the morphotropic phase boundary, dielectric constants of 1000, and loss tangents of about 0.02, are observed. The current-voltage behavior of the capacitors is characterized by a non-linear response, and significant asymmetry in both the leakage and breakdown characteristics as a function of bias sign is observed. Breakdown fields for PZT 53/47 thin films are typically approximately 800 kV/cm at 25 C. The authors have also studied the effects of La and Nb dopant additions and alternate firing strategies on film leakage characteristics. Donor doping at 2 - 5 mol % lowers leakage currents by a factor of 10(exp 3). For films prepared by a multilayering approach, firing each layer to crystallization results in leakage currents that are a factor of 10(exp 2) lower than films prepared by the standard process.

A precision analogue integrator system for heavy current measurement in MFDC resistance spot welding

NASA Astrophysics Data System (ADS)

Xia, Yu-Jun; Zhang, Zhong-Dian; Xia, Zhen-Xin; Zhu, Shi-Liang; Zhang, Rui

2016-02-01

In order to control and monitor the quality of middle frequency direct current (MFDC) resistance spot welding (RSW), precision measurement of the welding current up to 100 kA is required, for which Rogowski coils are the only viable current transducers at present. Thus, a highly accurate analogue integrator is the key to restoring the converted signals collected from the Rogowski coils. Previous studies emphasised that the integration drift is a major factor that influences the performance of analogue integrators, but capacitive leakage error also has a significant impact on the result, especially in long-time pulse integration. In this article, new methods of measuring and compensating capacitive leakage error are proposed to fabricate a precision analogue integrator system for MFDC RSW. A voltage holding test is carried out to measure the integration error caused by capacitive leakage, and an original integrator with a feedback adder is designed to compensate capacitive leakage error in real time. The experimental results and statistical analysis show that the new analogue integrator system could constrain both drift and capacitive leakage error, of which the effect is robust to different voltage levels of output signals. The total integration error is limited within  ±0.09 mV s-1 0.005% s-1 or full scale at a 95% confidence level, which makes it possible to achieve the precision measurement of the welding current of MFDC RSW with Rogowski coils of 0.1% accuracy class.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng, Yong; Yao, Manwen, E-mail: yaomw@tongji.edu.cn; Chen, Jianwen

The electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} (160 nm up/90 nm down) laminated film capacitors using the sol-gel process have been investigated. SrTiO{sub 3} is a promising and extensively studied high-K dielectric material, but its leakage current property is poor. SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated films can effectively suppress the demerits of pure SrTiO{sub 3} films under low electric field, but the leakage current value reaches to 0.1 A/cm{sup 2} at higher electric field (>160 MV/m). In this study, a new approach was applied to reduce the leakage current and improve the dielectric strength of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated films. Compared tomore » laminated films with Au top electrodes, dielectric strength of laminated films with Al top electrodes improves from 205 MV/m to 322 MV/m, simultaneously the leakage current maintains the same order of magnitude (10{sup −4} A/cm{sup 2}) until the breakdown occurs. The above electrical characteristics are attributed to the anodic oxidation reaction in origin, which can repair the defects of laminated films at higher electric field. The anodic oxidation reactions have been confirmed by the corresponding XPS measurement and the cross sectional HRTEM analysis. This work provides a new approach to fabricate dielectrics with high dielectric strength and low leakage current.« less

The Value of Changing Position in the Detection of CSF Leakage in Spontaneous Intracranial Hypotension Using Tc-99m DTPA Scintigraphy: Two Case Reports.

PubMed

Lu, Yu Yu; Wang, Hsin Yi; Lin, Ying; Lin, Wan Yu

2012-09-01

Radionuclide Cisternography (RNC) is of potential value in pointing out the sites of cerebrospinal fluid (CSF) leakage in patients with spontaneous intracranial hypotension (SIH). In the current report, we present two patients who underwent RNC for suspected CSF leakage. Both patients underwent magnetic resonance imaging (MRI) and RNC for evaluation. We describe a simple method to increase the detection ability of RNC for CSF leakage in patients with SIH.

Using provenance of terrigenous sediment to reconstruct the Agulhas Leakage during the Early and Late Pleistocene

NASA Astrophysics Data System (ADS)

Pearson, B.; Franzese, A. M.

2017-12-01

The Agulhas Current, the strongest western boundary current in the southern hemisphere, is uniquely characterized by its strong retroflection. The current carries water southward from the Indian Ocean toward the cape of South Africa, before turning back on itself. At this point of retroflection, some of the current's flow escapes into the southern Atlantic Ocean. This transfer of water from the Indian Ocean to Atlantic Ocean makes up the Agulhas Leakage. The Leakage occurs in a series of eddies and rings located in the Cape Basin south of the African continent. Scientific literature demonstrates that relatively buoyant leakage water has been a determining factor varying strength of the Atlantic Meridional Ocean Current (AMOC), during glacial-interglacial cycles. It has been demonstrated that radiogenic isotope, major, and trace element concentrations serve as a proxy for terrigenous sediment provenance in the Agulhas region. Current understanding is that terrigenous sediment provenance is older during warmer periods of deposition. This corresponds to more input from southeastern African end members, and thus a stronger Agulhas Current, during warming periods in the paleoclimate record. Conversely, younger terrigenous sediment deposited during colder periods, such as the Last Glacial Maximum, suggests a weaker Agulhas Current, and less Agulhas Leakage. In 2016, on the International Ocean Discovery Program Expedition 361, sediment cores were drilled at 6 sites in the Greater Agulhas region. A major goal of the expedition was to expand knowledge of the relation between changes in the Agulhas System and changes in paleoclimate, southern African climate, and AMOC. We analyzed sediment from Expedition 361 Site U1479 (35°03.53'S; 17°24.06'E; 2615 mbsl) located where the Agulhas Leakage occurs. We measured Argon, strontium isotope ratios, ɛNd, trace and major element concentrations on the <2 micron clay fraction. Preliminary results foretell promising findings. For instance, for the Early Pleistocene ( 1.3 - 1.5 Ma), K-Ar model ages correlate with shipboard measurements of natural gamma radiation, which show approximate 41 kyr periodicity.

Effect of atomic layer deposition temperature on current conduction in Al{sub 2}O{sub 3} films formed using H{sub 2}O oxidant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hiraiwa, Atsushi, E-mail: hiraiwa@aoni.waseda.jp, E-mail: qs4a-hriw@asahi-net.or.jp; Matsumura, Daisuke; Kawarada, Hiroshi, E-mail: kawarada@waseda.jp

To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al{sub 2}O{sub 3} films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al{sub 2}O{sub 3} metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO{sub 2} capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al{sub 2}O{sub 3} capacitors are found to outperform the SiO{sub 2} capacitors in the cases where the capacitors are negatively biased andmore » the gate material is adequately selected to reduce virtual dipoles at the gate/Al{sub 2}O{sub 3} interface. The Al{sub 2}O{sub 3} electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al{sub 2}O{sub 3} capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al{sub 2}O{sub 3}. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al{sub 2}O{sub 3} capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al{sub 2}O{sub 3}/underlying SiO{sub 2} interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al{sub 2}O{sub 3} films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al{sub 2}O{sub 3} films.« less

Local measurement and numerical modeling of mass/heat transfer from a turbine blade in a linear cascade with tip clearance

NASA Astrophysics Data System (ADS)

Jin, Peitong

2000-11-01

Local mass/heat transfer measurements from the turbine blade near-tip and the tip surfaces are performed using the naphthalene sublimation technique. The experiments are conducted in a linear cascade consisting of five high-pressure blades with a central test-blade configuration. The incoming flow conditions are close to those of the gas turbine engine environment (boundary layer displacement thickness is about 0.01 of chord) with an exit Reynolds number of 6.2 x 105. The effects of tip clearance level (0.86%--6.90% of chord), mainstream Reynolds number and turbulence intensity (0.2 and 12.0%) are investigated. Two methods of flow visualization---oil and lampblack, laser light sheet smoke wire---as well as static pressure measurement on the blade surface are used to study the tip leakage flow and vortex in the cascade. In addition, numerical modeling of the flow and heat transfer processes in the linear cascade with different tip clearances is conducted using commercial software incorporating advanced turbulence models. The present study confirms many important results on the tip leakage flow and vortex from the literature, contributes to the current understanding in the effects of tip leakage flow and vortex on local heat transfer from the blade near-tip and the tip surfaces, and provides detailed local and average heat/mass transfer data applicable to turbine blade tip cooling design.

Mechanism of a-IGZO TFT device deterioration—illumination light wavelength and substrate temperature effects

NASA Astrophysics Data System (ADS)

Chen, Te-Chih; Kuo, Yue; Chang, Ting-Chang; Chen, Min-Chen; Chen, Hua-Mao

2017-10-01

Device characteristics changes in an a-IGZO thin film transistor under light illumination and at raised temperature have been investigated. Light exposure causes a large leakage current, which is more obvious with an increase in the illumination energy, power and the temperature. The increase in the leakage current is due to the trap assisted photon excitation process that generates electron-hole pairs and the mechanism is enhanced with the additional thermal energy. The leakage current comes from the source side because holes generated in the process drift to the source side and therefore lower the barrier height. The above mechanism has been further verified with experiments of drain bias induced shifts in the threshold voltage and the subthreshold slope.

The effect of guard ring on leakage current and spectroscopic performance of TlBr planar detectors

NASA Astrophysics Data System (ADS)

Kargar, Alireza; Kim, Hadong; Cirignano, Leonard; Shah, Kanai

2014-09-01

Four thallium bromide planar detectors were fabricated from materials grown at RMD Inc. The TlBr samples were prepared to investigate the effect of guard ring on device gamma-ray spectroscopy performance, and to investigate the leakage current through surface and bulk. The devices' active area in planar configuration were 4.4 × 4.4 × 1.0 mm3. In this report, the detector fabrication process is described and the resulting energy spectra are discussed. It is shown that the guard ring improves device spectroscopic performance by shielding the sensing electrode from the surface leakage current, and by making the electric filed more uniform in the active region of the device.

Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Chae, Hee Jae; Seok, Ki Hwan; Lee, Sol Kyu; Joo, Seung Ki

2018-04-01

A novel inverted staggered metal-induced laterally crystallized (MILC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with a combination of a planarized gate and an overlap/off-set at the source-gate/drain-gate structure were fabricated and characterized. While the MILC process is advantageous for fabricating inverted staggered poly-Si TFTs, MILC TFTs reveal higher leakage current than TFTs crystallized by other processes due to their high trap density of Ni contamination. Due to this drawback, the planarized gate and overlap/off-set structure were applied to inverted staggered MILC TFTs. The proposed device shows drastic suppression of leakage current and pinning phenomenon by reducing the lateral electric field and the space-charge limited current from the gate to the drain.

Endoscopic Vacuum-Assisted Closure Therapy in Patients with Anastomotic Leakage after Esophagectomy: A Single-Center Experience

PubMed Central

Noh, Soo Min; Lee, Jeong Hoon; Jung, Hwoon-Yong; AlGhamdi, Zeead; Kim, Hyeong Ryul; Kim, Yong-Hee

2018-01-01

Aim To study the efficacy of E-VAC therapy for patients with anastomotic leakage after esophagectomy. Methods Between January 2013 and April 2017, 12 patients underwent E-VAC therapy for the management of postoperative leakage. Their clinical features and endoscopic procedure details, therapy results, adverse events, and survival were investigated. Results All 12 patients were male and the median age was 57 years (interquartile range 51.5–62.8 years). The reasons for esophageal surgery were esophageal cancer (83.3%), gastrointestinal stromal tumor (8.3%), and esophageal diverticulum (8.3%). Prior to E-VAC therapy, 6 patients had undergone failed primary surgical repair and the median duration from esophagectomy to leakage discovery was 13.5 days (IQR 6–207 days). The median duration of E-VAC therapy was 25 days (IQR 13.5–34.8 days) and the average sponge exchange rate was 2.7 times during the treatment period. After E-VAC therapy, 8 patients (66.7%) had complete leakage closure, 3 (25%) had a decreased leakage size, and 1 (8.3%) was unchanged. The three patients with a decreased leakage size after E-VAC therapy were treated with endoscopic and conservative management without further surgery. Conclusion With proper patient selection, E-VAC therapy is a feasible and safe method for the treatment of anastomotic leakage after esophagectomy. PMID:29849581

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

NASA Astrophysics Data System (ADS)

Sun, Huarui; Bajo, Miguel Montes; Uren, Michael J.; Kuball, Martin

2015-01-01

Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage "hot spots" at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7-0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which is consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites.

The Greenhouse Effect - Re-examination of the Impact of an Increase in Carbon Dioxide in the Atmosphere

NASA Astrophysics Data System (ADS)

Underwood, T. G.

2017-12-01

Examination of the radiation budget at the surface of the Earth shows that there are three factors affecting the surface temperature; the amount of solar radiation absorbed by the atmosphere and by the surface respectively, and the amount of leakage of infrared radiation emitted from the surface directly into space. If there were no leakage, the upwelling infrared radiation from the Earth's surface would be equal to the incoming solar radiation absorbed by the atmosphere plus twice the solar radiation absorbed by the surface. This results from the summation of a sequence of equal upward and downward re-emissions of infrared radiation absorbed by the atmosphere following the initial absorption of solar radiation. At current levels of solar absorption, this would result in total upwelling radiation of approximately 398.6 W/m2, or a maximum surface temperature of 16.4°C. Allowing for leakage of infrared radiation through the atmospheric window, the resulting emission from the Earth's surface is reduced to around 396 W/m2, corresponding to the current average global surface temperature of around 15.9°C. Absorption of solar and infrared radiation by greenhouse gases is determined by the absorption bands for the respective gases and their concentrations. Absorption of incoming solar radiation is largely by water vapor and ozone, and an increase in absorption would reduce not increase the surface temperature. Moreover, it is probable that all emitted infrared radiation that can be absorbed by greenhouse gases, primarily water vapor, with a small contribution from carbon dioxide and ozone, is already fully absorbed, and the leakage of around 5.5 % corresponds to the part of the infrared red spectrum that is not absorbed by greenhouse gases. The carbon dioxide absorption bands, which represent a very small percentage of the infrared spectrum, are most likely fully saturated. In these circumstances, increased concentrations of greenhouse gases, and carbon dioxide in particular, will have no effect on the emitted radiation. The surface temperature is probably at the thermodynamic limit for the current luminosity of the sun. Satellite based measurements since 1979 suggest that any global warming over the past 150 years may be due to an increase in total solar irradiance, which we are still a decade or two from being able to confirm.

Systematic review of methods to predict and detect anastomotic leakage in colorectal surgery.

PubMed

Hirst, N A; Tiernan, J P; Millner, P A; Jayne, D G

2014-02-01

Anastomotic leakage is a serious complication of gastrointestinal surgery resulting in increased morbidity and mortality, poor function and predisposing to cancer recurrence. Earlier diagnosis and intervention can minimize systemic complications but is hindered by current diagnostic methods that are non-specific and often uninformative. The purpose of this paper is to review current developments in the field and to identify strategies for early detection and treatment of anastomotic leakage. A systematic literature search was performed using the MEDLINE, Embase, PubMed and Cochrane Library databases. Search terms included 'anastomosis' and 'leak' and 'diagnosis' or 'detection' and 'gastrointestinal' or 'colorectal'. Papers concentrating on the diagnosis of gastrointestinal anastomotic leak were identified and further searches were performed by cross-referencing. Computerized tomography CT scanning and water-soluble contrast studies are the current preferred techniques for diagnosing anastomotic leakage but suffer from variable sensitivity and specificity, have logistical constraints and may delay timely intervention. Intra-operative endoscopy and imaging may offer certain advantages, but the ability to predict anastomotic leakage is unproven. Newer techniques involve measurement of biomarkers for anastomotic leakage and have the potential advantage of providing cheap real-time monitoring for postoperative complications. Current diagnostic tests often fail to diagnose anastomotic leak at an early stage that enables timely intervention and minimizes serious morbidity and mortality. Emerging technologies, based on detection of local biomarkers, have achieved proof of concept status but require further evaluation to determine whether they translate into improved patient outcomes. Further research is needed to address this important, yet relatively unrecognized, area of unmet clinical need. Colorectal Disease © 2013 The Association of Coloproctology of Great Britain and Ireland.

Potential for EMU Fabric Damage by Electron Beam and Molten Metal During Space Welding for the International Space Welding Experiment

NASA Technical Reports Server (NTRS)

Fragomeni, James M.

1998-01-01

As a consequence of preparations concerning the International Space Welding Experiment (ISWE), studies were performed to better understand the effect of molten metal contact and electron beam impingement with various fabrics for space suit applications. The question arose as to what would occur if the electron beam from the Ukrainian Universal Hand Tool (UHT) designed for welding in space were to impinge upon a piece of Nextel AF-62 ceramic cloth designed to withstand temperatures up to 1427 C. The expectation was that the electron beam would lay down a static charge pattern with no damage to the ceramic fabric. The electron beam is capable of spraying the fabric with enough negative charge to repel further electrons from the fabric before significant heating occurs. The static charge pattern would deflect any further charge accumulation except for a small initial amount of leakage to the grounded surface of the welder. However, when studies were made of the effect of the electron beam on the insulating ceramic fabric it was surprisingly found that the electron beam did indeed burn through the ceramic fabric. It was also found that the shorter electron beam standoff distances had longer burnthrough times than did some greater electron beam standoff distances. A possible explanation for the longer burnthrough times for the small electron beam standoff distance would be outgassing of the fabric which caused the electron beam hand-tool to cycle on and off to provide some protection for the cathodes. The electron beam hand tool was observed to cycle off at the short standoff distance of two inches likely due to vapors being outgassed. During the electron beam welding process there is an electron leakage, or current leakage, flow from the fabric. A static charge pattern is initially laid down by the electron beam current flow. The static charge makes up the current leakage flow which initially slightly heats up the fabric. The initially laid down surface charge leaks a small amount of current. The rate at which the current charge leaks from the fabric controls how fast the fabric heats up. As the ceramic fabric is heated it begins to outgass primarily from contamination/impurities atoms or molecules on and below the fabric surface. The contaminant gases ionize to create extra charge carriers and multiply a current of electrons. The emitted gas which ionized in the electron leakage flow promotes further leakage. Thus, the small leakage of charge from the fabric surface is enhanced by outgassing. When the electron beam current makes up the lost current, the incoming electrons heat the fabric and further enhance the outgassing. The additional leakage promotes additional heating up of the ceramic fabric. The electrons bound to the ceramic fabric surface leak off more and more as the surface gets hotter promoting even greater leakage. The additional electrons that result also gain energy in the field and produce further electrons. Eventually the process becomes unstable and accelerates to the point where a hole is burned through the fabric.

Multichannel detection of ionic currents through two nanopores fabricated on integrated Si3N4 membranes.

PubMed

Yanagi, Itaru; Akahori, Rena; Aoki, Mayu; Harada, Kunio; Takeda, Ken-Ichi

2016-08-16

Integration of solid-state nanopores and multichannel detection of signals from each nanopore are effective measures for realizing high-throughput nanopore sensors. In the present study, we demonstrated fabrication of Si3N4 membrane arrays and the simultaneous measurement of ionic currents through two nanopores formed in two adjacent membranes. Membranes with thicknesses as low as 6.4 nm and small nanopores with diameters of less than 2 nm could be fabricated using the poly-Si sacrificial-layer process and multilevel pulse-voltage injection. Using the fabricated nanopore membranes, we successfully achieved simultaneous detection of clear ionic-current blockades when single-stranded short homopolymers (poly(dA)60) passed through two nanopores. In addition, we investigated the signal crosstalk and leakage current among separated chambers. When two nanopores were isolated on the front surface of the membrane, there was no signal crosstalk or leakage current between the chambers. However, when two nanopores were isolated on the backside of the Si substrate, signal crosstalk and leakage current were observed owing to high-capacitance coupling between the chambers and electrolysis of water on the surface of the Si substrate. The signal crosstalk and leakage current could be suppressed by oxidizing the exposed Si surface in the membrane chip. Finally, the observed ionic-current blockade when poly(dA)60 passed through the nanopore in the oxidized chip was approximately half of that observed in the non-oxidized chip.

Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gillinger, M.; Schneider, M.; Bittner, A.

2015-02-14

Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 hmore » in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.« less

On Leakage Current Measured at High Cell Voltages in Lithium-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vadivel, Nicole R.; Ha, Seungbum; He, Meinan

2017-01-01

In this study, parasitic side reactions in lithium-ion batteries were examined experimentally using a potentiostatic hold at high cell voltage. The experimental leakage current measured during the potentiostatic hold was compared to the Tafel expression and showed poor agreement with the expected transfer coefficient values, indicating that a more complicated expression could be needed to accurately capture the physics of this side reaction. Here we show that cross-talk between the electrodes is the primary contribution to the observed leakage current after the relaxation of concentration gradients has ceased. This cross-talk was confirmed with experiments using a lithium-ion conducting glass ceramicmore » (LICGC) separator, which has high conductance only for lithium cations. The cells with LICGC separators showed significantly less leakage current during the potentiostatic hold test compared to cells with standard microporous separators where cross-talk is present. In addition, direct-current pulse power tests show an impedance rise for cells held at high potentials and for cells held at high temperatures, which could be attributed to film formation from the parasitic side reaction. Based on the experimental findings, a phenomenological mechanism is proposed for the parasitic side reaction which accounts for cross-talk and mass transport of the decomposition products across the separator.« less

Defect-Enabled Electrical Current Leakage in Ultraviolet Light-Emitting Diodes

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2015-04-13

The AlGaN materials system offers a tunable, ultra-wide bandgap that is exceptionally useful for high-power electronics and deep ultraviolet optoelectronics. Moseley et al. (pp. 723–726) investigate a structural defect known as an open-core threading dislocation or ''nanopipe'' that is particularly detrimental to devices that employ these materials. Furthermore, an AlGaN thin film was synthesized using metal-organic chemical-vapor deposition. Electrical current leakage is detected at a discrete point using a conductive atomic-force microscope (CAFM). However, no physical feature or abnormality at this location was visible by an optical microscope. The AlGaN thin film was then etched in hot phosphoric acid, andmore » the same location that was previously analyzed was revisited with the CAFM. The point that previously exhibited electrical current leakage had been decorated with a 1.1 μm wide hexagonal pit, which identified the site of electrical current leakage as a nanopipe and allows these defects to be easily observed by optical microscopy. Moreover, with this nanopipe identification and quantification strategy, the authors were able to correlate decreasing ultraviolet light-emitting diode optical output power with increasing nanopipe density.« less

Application of poly (p-phenylene oxide) as blocking layer to reduce self-discharge in supercapacitors

NASA Astrophysics Data System (ADS)

Tevi, Tete; Yaghoubi, Houman; Wang, Jing; Takshi, Arash

2013-11-01

Supercapacitors are electrochemical energy storage devices with high power density. However, application of supercapacitors is limited mainly due to their high leakage current. In this work, application of an ultra-thin layer of electrodeposited poly (p-phenylene oxide) (PPO) has been investigated as a blocking layer to reduce the leakage current. The polymer was first deposited on a glassy carbon electrode. The morphology of the film was studied by atomic force microscopy (AFM), and the film thickness was estimated to be ˜1.5 nm by using the electrochemical impedance spectroscopy (EIS) technique. The same deposition method was applied to coat the surface of the activated carbon electrodes of a supercapacitor with PPO. The specific capacitance, the leakage current, and the series resistance were measured in two devices with and without the blocking layer. The results demonstrate that the application of the PPO layer reduced the leakage current by ˜78%. However, the specific capacitance was decreased by ˜56%, when the blocking layer was applied. Due to the lower rate of self-discharge, the suggested approach can be applied to fabricate devices with longer charge storage time.

Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

NASA Astrophysics Data System (ADS)

Zebrev, Gennady I.; Vatuev, Alexander S.; Useinov, Rustem G.; Emeliyanov, Vladimir V.; Anashin, Vasily S.; Gorbunov, Maxim S.; Turin, Valentin O.; Yesenkov, Kirill A.

2014-08-01

We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.

A compact model of the reverse gate-leakage current in GaN-based HEMTs

NASA Astrophysics Data System (ADS)

Ma, Xiaoyu; Huang, Junkai; Fang, Jielin; Deng, Wanling

2016-12-01

The gate-leakage behavior in GaN-based high electron mobility transistors (HEMTs) is studied as a function of applied bias and temperature. A model to calculate this current is given, which shows that trap-assisted tunneling, trap-assisted Frenkel-Poole (FP) emission, and direct Fowler-Nordheim (FN) tunneling have their main contributions at different electric field regions. In addition, the proposed model clearly illustrates the effect of traps and their assistance to the gate leakage. We have demonstrated the validity of the model by comparisons between model simulation results and measured experimental data of HEMTs, and a good agreement is obtained.

Advanced Wet Tantalum Capacitors: Design, Specifications and Performance

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2016-01-01

Insertion of new types of commercial, high volumetric efficiency wet tantalum capacitors in space systems requires reassessment of the existing quality assurance approaches that have been developed for capacitors manufactured to MIL-PRF-39006 requirements. The specifics of wet electrolytic capacitors is that leakage currents flowing through electrolyte can cause gas generation resulting in building up of internal gas pressure and rupture of the case. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. This presentation gives a review of specifics of the design, performance, and potential reliability risks associated with advanced wet tantalum capacitors. Problems related to setting adequate requirements for DPA, leakage currents, hermeticity, stability at low and high temperatures, ripple currents for parts operating in vacuum, and random vibration testing are discussed. Recommendations for screening and qualification to reduce risks of failures have been suggested.

Advanced Wet Tantalum Capacitors: Design, Specifications and Performance

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2017-01-01

Insertion of new types of commercial, high volumetric efficiency wet tantalum capacitors in space systems requires reassessment of the existing quality assurance approaches that have been developed for capacitors manufactured to MIL-PRF-39006 requirements. The specifics of wet electrolytic capacitors is that leakage currents flowing through electrolyte can cause gas generation resulting in building up of internal gas pressure and rupture of the case. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. This presentation gives a review of specifics of the design, performance, and potential reliability risks associated with advanced wet tantalum capacitors. Problems related to setting adequate requirements for DPA, leakage currents, hermeticity, stability at low and high temperatures, ripple currents for parts operating in vacuum, and random vibration testing are discussed. Recommendations for screening and qualification to reduce risks of failures have been suggested.

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2015-03-01

Current-voltage (IV) characteristics of two AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are analyzed. A three-diode circuit is simulated to emulate the IV characteristics of the DUV-LEDs, but is only able to accurately model the lower leakage current, lower nanopipe density DUV-LED. It was found that current leakage through the nanopipes in these structures is rectifying, despite nanopipes being previously established as inherently n-type. Using defect-sensitive etching, the nanopipes are revealed to terminate within the p-type GaN capping layer of the DUV-LEDs. The circuit model is modified to account for another p-nmore » junction between the n-type nanopipes and the p-type GaN, and an excellent fit to the IV characteristics of the leaky DUV-LED is achieved.« less

Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2015-01-01

Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Huarui, E-mail: huarui.sun@bristol.ac.uk; Bajo, Miguel Montes; Uren, Michael J.

2015-01-26

Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage “hot spots” at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7–0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which ismore » consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites.« less

2017 NEPP Tasks Update for Ceramic and Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2017-01-01

This presentation gives an overview of current NEPP tasks on ceramic and tantalum capacitors and plans for the future. It includes tasks on leakage currents, gas generation and case deformation in wet tantalum capacitors; ESR degradation and acceleration factors in MnO2 and polymer cathode capacitors. Preliminary results on the effect of moisture on degradation of reverse currents in MnO2 tantalum capacitors are discussed. Latest results on mechanical characteristics of MLCCs and modeling of degradation of leakage currents in BME capacitors with defects are also presented.

Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratio.

PubMed

Qiu, Chenguang; Zhang, Zhiyong; Zhong, Donglai; Si, Jia; Yang, Yingjun; Peng, Lian-Mao

2015-01-27

Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes (CNTs) usually suffer from ambipolar behavior, large off-state current and small current on/off ratio, which are highly undesirable for digital electronics. To overcome these problems, a feedback-gate (FBG) FET structure is designed and tested. This FBG FET differs from normal top-gate FET by an extra feedback-gate, which is connected directly to the drain electrode of the FET. It is demonstrated that a FBG FET based on a semiconducting CNT with a diameter of 1.5 nm may exhibit low off-state current of about 1 × 10(-13) A, high current on/off ratio of larger than 1 × 10(8), negligible drain-induced off-state leakage current, and good subthreshold swing of 75 mV/DEC even at large source-drain bias and room temperature. The FBG structure is promising for CNT FETs to meet the standard for low-static-power logic electronics applications, and could also be utilized for building FETs using other small band gap semiconductors to suppress leakage current.

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

NASA Astrophysics Data System (ADS)

Alvarez, J.; Boutchich, M.; Kleider, J. P.; Teraji, T.; Koide, Y.

2014-09-01

The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy and confocal micro-Raman/photoluminescence imaging analysis. Local areas characterized by a strong decrease of the local resistance (5-6 orders of magnitude drop) with respect to their close surrounding have been identified in several different regions of the sample surface. The same local areas, also referenced as electrical hot-spots, reveal a slightly constrained diamond lattice and three dominant Raman bands in the low-wavenumber region (590, 914 and 1040 cm-1). These latter bands are usually assigned to the vibrational modes involving boron impurities and its possible complexes that can electrically act as traps for charge carriers. Local current-voltage measurements performed at the hot-spots point out a trap-filled-limited current as the main conduction mechanism favouring the leakage current in the Schottky devices.

An assessment of the Space Station Freedom program's leakage current requirement

NASA Technical Reports Server (NTRS)

Nagy, Michael

1991-01-01

The Space Station Freedom Program requires leakage currents to be limited to less than human perception level, which NASA presently defines as 5 mA for dc. The origin of this value is traced, and the literature for other dc perception threshold standards is surveyed. It is shown that while many varying standards exist, very little experimental data is available to support them.

Investigation of defect-induced abnormal body current in fin field-effect-transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Kuan-Ju; Tsai, Jyun-Yu; Lu, Ying-Hsin

2015-08-24

This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.

Case Study of Envelope Sealing in Existing Multiunit Structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dentz, Jordan; Conlin, Francis; Podorson, David

2012-10-01

This report describes envelope air sealing that was included in the retrofit of a 244 unit low-rise multifamily housing complex in Durham, N.C. On average, total leakage was reduced by nearly half, from 19.7 ACH50 to 9.4 ACH50. Important air leakage locations identified included plumbing and electrical penetrations, dropped ceilings/soffits, windows, ducts and wall-to-floor intersections. Specifications and a pictorial guide were developed for contractors performing the work.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Constantin, M; Sawkey, D; Johnsen, S

Purpose: To validate the physics parameters of a Monte Carlo model for patient plane leakage calculations on the 6MV Unique linac by comparing the simulations against IEC patient plane leakage measurements. The benchmarked model can further be used for shielding design optimization, to predict leakage in the proximity of intended treatment fields, reduce the system weight and cost, and improve components reliability. Methods: The treatment head geometry of the Unique linac was simulated in Geant4 (v9.4.p02 with “Opt3” standard electromagnetic physics list) based on CAD drawings of all collimation and shielding components projected from the target to the area withinmore » 2m from isocenter. A 4×4m2 scorer was inserted 1m from the target in the patient plane and multiple phase space files were recorded by performing a 40-node computing cluster simulation on the EC2 cloud. The photon energy fluence was calculated relative to the value at isocenter for a 10×10cm2 field using 10×10mm2 bins. Tungsten blocks were parked accordingly to represent MLC120. The secondary particle contamination to patient plane was eliminated by “killing” those particles prior to the primary collimator entrance using a “kill-plane”, which represented the upper head shielding components not being modeled. Both IEC patient-plane leakage and X/Y-jaws transmission were simulated. Results: The contribution of photons to energy fluence was 0.064% on average, in excellent agreement with the experimental data available at 0.5, 1.0, and 1.5m from isocenter, characterized by an average leakage of 0.045% and a maximum leakage of 0.085%. X- and Y-jaws transmissions of 0.43% and 0.44% were found in good agreement with measurements of 0.48% and 0.43%, respectively. Conclusion: A Geant4 model based on energy fluence calculations for the 6MV Unique linac was created and validated using IEC patient plane leakage measurements. The “kill-plane” has effectively eliminated electron contamination to patient plane in these simulations.« less

Nonstoichiometric Solution-Processed BaTiO₃ Film for Gate Insulator Applications.

PubMed

Lau, Joyce; Kim, Sangsub; Kim, Hyunki; Koo, Kwangjun; Lee, Jaeseob; Kim, Sangsoo; Choi, Byoungdeog

2018-09-01

Solution processed barium titanate (BTO) was used to fabricate an Al/BaTiO3/p-Si metal-insulator-semiconductor (MIS) structure, which was used as a gate insulator. Changes in the electrical characteristics of the film were investigated as a function of the film thickness and post deposition annealing conditions. Our results showed that a thickness of 5 layers and an annealing temperature of 650 °C produced the highest electrical performance. BaxTi1-xO3 was altered at x = 0.10, 0.30, 0.50, 0.70, 0.90, and 1.0 to investigate changes in the electrical properties as a function of composition. The highest dielectric constant of 87 was obtained for x = 0.10, while the leakage current density was suppressed as Ba content increased. The lowest leakage current density was 1.34×10-10 A/cm2, which was observed at x = 0.90. The leakage current was related to the resistivity of the film, the interface states, and grain densification. Space charge limited current (SCLC) was the dominant leakage mechanism in BTO films based on leakage current analysis. Although a Ba content of x = 0.90 had the highest trap density, the traps were mainly composed of Ti-vacancies, which acted as strong electron traps and affected the film resistivity. A secondary phase, Ba2TiO4, which was observed in cases of excess Ba, acted as a grain refiner and provided faster densification of the film during the thermal process. The absence of a secondary phase in BaO (x = 1.0) led to the formation of many interface states and degradation in the electrical properties. Overall, the insulator properties of BTO were improved when the composition ratio was x = 0.90.

Estimation of methane emission from California natural gas industry.

PubMed

Kuo, Jeff; Hicks, Travis C; Drake, Brian; Chan, Tat Fu

2015-07-01

Energy generation and consumption are the main contributors to greenhouse gases emissions in California. Natural gas is one of the primary sources of energy in California. A study was recently conducted to develop current, reliable, and California-specific source emission factors (EFs) that could be used to establish a more accurate methane emission inventory for the California natural gas industry. Twenty-five natural gas facilities were surveyed; the surveyed equipment included wellheads (172), separators (131), dehydrators (17), piping segments (145), compressors (66), pneumatic devices (374), metering and regulating (M&R) stations (19), hatches (34), pumps (2), and customer meters (12). In total, 92,157 components were screened, including flanges (10,101), manual valves (10,765), open-ended lines (384), pressure relief valves (358), regulators (930), seals (146), threaded connections (57,061), and welded connections (12,274). Screening values (SVs) were measured using portable monitoring instruments, and Hi-Flow samplers were then used to quantify fugitive emission rates. For a given SV range, the measured leak rates might span several orders of magnitude. The correlation equations between the leak rates and SVs were derived. All the component leakage rate histograms appeared to have the same trend, with the majority of leakage rates<0.02 cubic feet per minute (cfm). Using the cumulative distribution function, the geometric mean was found to be a better indicator than the arithmetic mean, as the mean for each group of leakage rates found. For most component types, the pegged EFs for SVs of ≥10,000 ppmV and of ≥50,000 ppmV are relatively similar. The component-level average EFs derived in this study are often smaller than the corresponding ones in the 1996 U.S. Environmental Protection Agency/Gas Research Institute (EPA/GRI) study. Twenty-five natural gas facilities in California were surveyed to develop current, reliable, and California-specific source emission factors (EFs) for the natural gas industry. Screening values were measured by using portable monitoring instruments, and Hi-Flow samplers were then used to quantify fugitive emission rates. The component-level average EFs derived in this study are often smaller than the corresponding ones in the 1996 EPA/GRI study. The smaller EF values from this study might be partially attributable to the employment of the leak detection and repair program by most, if not all, of the facilities surveyed.

Noise in CdZnTe detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luke, P. N.; Amman, M.; Lee J. S.

2000-10-10

Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current was substantially higher. This implies that reducing the surface leakage current of a CdZnTe detector may not necessarily result in a significant improvement in noise performance. The noise generated by the bulk current is also observed to be below full shot noise. This partial suppression of shot noise may bemore » the result of Coulomb interaction between carriers or carrier trapping. Devices with coplanar strip electrodes were observed to produce a 1/f noise term at the preamplifier output. Higher levels of this 1/f noise were observed with decreasing gap widths between electrodes. The level of this 1/f noise appeared to be independent of bias voltage and leakage current but was substantially reduced after certain surface treatments.« less

Conduction mechanism of leakage current due to the traps in ZrO2 thin film

NASA Astrophysics Data System (ADS)

Seo, Yohan; Lee, Sangyouk; An, Ilsin; Song, Chulgi; Jeong, Heejun

2009-11-01

In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current-voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5-5.0 MV cm-1) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8-1.5 MV cm-1). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV.

SU-E-T-774: Use of a Scintillator-Mirror-Camera System for the Measurement of MLC Leakage Radiation with the CyberKnife M6 System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goggin, L; Kilby, W; Noll, M

2015-06-15

Purpose: A technique using a scintillator-mirror-camera system to measure MLC leakage was developed to provide an efficient alternative to film dosimetry while maintaining high spatial resolution. This work describes the technique together with measurement uncertainties. Methods: Leakage measurements were made for the InCise™ MLC using the Logos XRV-2020A device. For each measurement approximately 170 leakage and background images were acquired using optimized camera settings. Average background was subtracted from each leakage frame before filtering the integrated leakage image to replace anomalous pixels. Pixel value to dose conversion was performed using a calibration image. Mean leakage was calculated within an ROImore » corresponding to the primary beam, and maximum leakage was determined by binning the image into overlapping 1mm x 1mm ROIs. 48 measurements were performed using 3 cameras and multiple MLC-linac combinations in varying beam orientations, with each compared to film dosimetry. Optical and environmental influences were also investigated. Results: Measurement time with the XRV-2020A was 8 minutes vs. 50 minutes using radiochromic film, and results were available immediately. Camera radiation exposure degraded measurement accuracy. With a relatively undamaged camera, mean leakage agreed with film measurement to ≤0.02% in 92% cases, ≤0.03% in 100% (for maximum leakage the values were 88% and 96%) relative to reference open field dose. The estimated camera lifetime over which this agreement is maintained is at least 150 measurements, and can be monitored using reference field exposures. A dependency on camera temperature was identified and a reduction in sensitivity with distance from image center due to optical distortion was characterized. Conclusion: With periodic monitoring of the degree of camera radiation damage, the XRV-2020A system can be used to measure MLC leakage. This represents a significant time saving when compared to the traditional film-based approach without any substantial reduction in accuracy.« less

Surface leakage current in 12.5  μm long-wavelength HgCdTe infrared photodiode arrays.

PubMed

Qiu, Weicheng; Hu, Weida; Lin, Chun; Chen, Xiaoshuang; Lu, Wei

2016-02-15

Long-wavelength (especially >12  μm) focal plane array (FPA) infrared detection is the cutting edge technique for third-generation infrared remote sensing. However, dark currents, which are very sensitive to the growth of small Cd composition HgCdTe, strongly limits the performance of long wavelength HgCdTe photodiode arrays in FPAs. In this Letter, 12.5 μm long-wavelength Hg_1-xCd_xTe (x≈0.219) infrared photodiode arrays are reported. The variable-area and variable-temperature electrical characteristics of the long-wavelength infrared photodiodes are measured. The characteristics of the extracted zero-bias resistance-area product (l/R₀A) varying with the perimeter-to-area (P/A) ratio clearly show that surface leakage current mechanisms severely limit the overall device performance. A sophisticated model has been developed for investigating the leakage current mechanism in the photodiodes. Modeling of temperature-dependent I-V characteristic indicates that the trap-assisted tunneling effect dominates the dark current at 50 K resulting in nonuniformities in the arrays. The extracted trap density, approximately 10¹³-10¹⁴  cm^-3, with an ionized energy of 30 meV is determined by simulation. The work described in this Letter provides the basic mechanisms for a better understanding of the leakage current mechanism for long-wavelength (>12  μm) HgCdTe infrared photodiode arrays.

Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness

NASA Astrophysics Data System (ADS)

Jegert, Gunther; Kersch, Alfred; Weinreich, Wenke; Lugli, Paolo

2011-01-01

In this paper, we investigate the influence of electrode roughness on the leakage current in TiN/high-κ ZrO2/TiN (TZT) thin-film capacitors which are used in dynamic random access memory cells. Based on a microscopic transport model, which is expanded to incorporate electrode roughness, we assess the ultimate scaling potential of TZT capacitors in terms of equivalent oxide thickness, film smoothness, thickness fluctuations, defect density and distribution, and conduction band offset (CBO). The model is based on three-dimensional, fully self-consistent, kinetic Monte Carlo transport simulations. Tunneling transport in the bandgap of the dielectric is treated, which includes defect-assisted transport mechanisms. Electrode roughness is described in the framework of fractal geometry. While the short-range roughness of the electrodes is found not to influence significantly the leakage current, thickness fluctuations of the dielectric have a major impact. For thinner dielectric films they cause a transformation of the dominant transport mechanism from Poole-Frenkel conduction to trap-assisted tunneling. Consequently, the sensitivity of the leakage current on electrode roughness drastically increases on downscaling. Based on the simulations, optimization of the CBO is suggested as the most viable strategy to extend the scalability of TZT capacitors over the next chip generations.

Large Area Cd0.9Zn0.1Te Pixelated Detector: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Chaudhuri, Sandeep K.; Nguyen, Khai; Pak, Rahmi O.; Matei, Liviu; Buliga, Vladimir; Groza, Michael; Burger, Arnold; Mandal, Krishna C.

2014-04-01

Cd0.9Zn0.1Te (CZT) based pixelated radiation detectors have been fabricated and characterized for gamma ray detection. Large area CZT single crystals has been grown using a tellurium solvent method. A 10 ×10 guarded pixelated detector has been fabricated on a 19.5 ×19.5 ×5 mm3 crystal cut out from the grown ingot. The pixel dimensions were 1.3 ×1.3 mm2 and were pitched at 1.8 mm. A guard grid was used to reduce interpixel/inter-electrode leakage. The crystal was characterized in planar configuration using electrical, optical and optoelectronic methods prior to the fabrication of pixelated geometry. Current-voltage (I-V) measurements revealed a leakage current of 27 nA at an operating bias voltage of 1000 V and a resistivity of 3.1 ×1010 Ω-cm. Infrared transmission imaging revealed an average tellurium inclusion/precipitate size less than 8 μm. Pockels measurement has revealed a near-uniform depth-wise distribution of the internal electric field. The mobility-lifetime product in this crystal was calculated to be 6.2 ×10 - 3 cm2/V using alpha ray spectroscopic method. Gamma spectroscopy using a 137Cs source on the pixelated structure showed fully resolved 662 keV gamma peaks for all the pixels, with percentage resolution (FWHM) as high as 1.8%.

Atmospheric leakage and condensate production in NASA's biomass production chamber. Effect of diurnal temperature cycles

NASA Technical Reports Server (NTRS)

Wheeler, Raymond M.; Drese, John H.; Sager, John C.

1991-01-01

A series of tests were conducted to monitor atmospheric leakage rate and condensate production in NASA's Biomass Production Chamber (BPC). Water was circulated through the 64 plant culture trays inside the chamber during the tests but no plants were present. Environmental conditions were set to a 12-hr photoperiod with either a matching 26 C (light)/20 C (dark) thermoperiod, or a constant 23 C temperature. Leakage, as determined by carbon dioxide decay rates, averaged about 9.8 percent for the 26 C/20 C regime and 7.3 percent for the constant 23 C regime. Increasing the temperature from 20 C to 26 C caused a temporary increase in pressure (up to 0.5 kPa) relative to ambient, while decreasing the temperature caused a temporary decrease in pressure of similar magnitude. Little pressure change was observed during transition between 23 C (light) and 23 C (dark). The lack of large pressure events under isothermal conditions may explain the lower leakage rate observed. When only the plant support inserts were placed in the culture trays, condensate production averaged about 37 liters per day. Placing acrylic germination covers over the tops of culture trays reduced condensate production to about 7 liters per day. During both tests, condensate production from the lower air handling system was 60 to 70 percent greater than from the upper system, suggesting imbalances exist in chilled and hot water flows for the two air handling systems. Results indicate that atmospheric leakage rates are sufficiently low to measure CO2 exchange rates by plants and the accumulation of certain volatile contaminants (e.g., ethylene). Control system changes are recommended in order to balance operational differences (e.g., humidity and temperature) between the two halves of the chamber.

Suppression of gate leakage current in in-situ grown AlN/InAlN/AlN/GaN heterostructures based on the control of internal polarization fields

NASA Astrophysics Data System (ADS)

Kotani, Junji; Yamada, Atsushi; Ishiguro, Tetsuro; Yamaguchi, Hideshi; Nakamura, Norikazu

2017-03-01

This paper investigates the gate leakage characteristics of in-situ AlN capped InAlN/AlN/GaN heterostructures grown by metal-organic vapor phase epitaxy. It was revealed that the leakage characteristics of AlN capped InAlN/AlN/GaN heterostructures are strongly dependent on the growth temperature of the AlN cap. For an AlN capped structure with an AlN growth temperature of 740 °C, the leakage current even increased although there exists a large bandgap material on InAlN/AlN/GaN heterostructures. On the other hand, a large reduction of the gate leakage current by 4-5 orders of magnitudes was achieved with a very low AlN growth temperature of 430 °C. X-ray diffraction analysis of the AlN cap grown at 740 °C indicated that the AlN layer is tensile-strained. In contrast to this result, the amorphous structure was confirmed for the AlN cap grown at 430 °C by transmission electron microscopy. Furthermore, theoretical analysis based on one-dimensional band simulation was carried out, and the large increase in two-dimensional electron gas (2DEG) observed in Hall measurements was well reproduced by taking into account the spontaneous and piezo-electric polarization in the AlN layer grown at 740 °C. For the AlN capped structure grown at 430 °C, it is believed that the reduced polarization field in the AlN cap suppressed the penetration of 2DEG into the InAlN barrier layer, resulting in a small impact on 2DEG mobility and density. We believe that an in-situ grown AlN cap with a very low growth temperature of 430 °C is a promising candidate for high-frequency/high-power GaN-based devices with low gate leakage current.

Optimal Dynamic Sub-Threshold Technique for Extreme Low Power Consumption for VLSI

NASA Technical Reports Server (NTRS)

Duong, Tuan A.

2012-01-01

For miniaturization of electronics systems, power consumption plays a key role in the realm of constraints. Considering the very large scale integration (VLSI) design aspect, as transistor feature size is decreased to 50 nm and below, there is sizable increase in the number of transistors as more functional building blocks are embedded in the same chip. However, the consequent increase in power consumption (dynamic and leakage) will serve as a key constraint to inhibit the advantages of transistor feature size reduction. Power consumption can be reduced by minimizing the voltage supply (for dynamic power consumption) and/or increasing threshold voltage (V(sub th), for reducing leakage power). When the feature size of the transistor is reduced, supply voltage (V(sub dd)) and threshold voltage (V(sub th)) are also reduced accordingly; then, the leakage current becomes a bigger factor of the total power consumption. To maintain low power consumption, operation of electronics at sub-threshold levels can be a potentially strong contender; however, there are two obstacles to be faced: more leakage current per transistor will cause more leakage power consumption, and slow response time when the transistor is operated in weak inversion region. To enable low power consumption and yet obtain high performance, the CMOS (complementary metal oxide semiconductor) transistor as a basic element is viewed and controlled as a four-terminal device: source, drain, gate, and body, as differentiated from the traditional approach with three terminals: i.e., source and body, drain, and gate. This technique features multiple voltage sources to supply the dynamic control, and uses dynamic control to enable low-threshold voltage when the channel (N or P) is active, for speed response enhancement and high threshold voltage, and when the transistor channel (N or P) is inactive, to reduce the leakage current for low-leakage power consumption.

Suppression of Lateral Diffusion and Surface Leakage Currents in nBn Photodetectors Using an Inverted Design

NASA Astrophysics Data System (ADS)

Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

2018-02-01

Surface leakage and lateral diffusion currents in InAs-based nBn photodetectors have been investigated. Devices fabricated using a shallow etch processing scheme that etches through the top contact and stops at the barrier exhibited large lateral diffusion current but undetectably low surface leakage. Such large lateral diffusion current significantly increased the dark current, especially in small devices, and causes pixel-to-pixel crosstalk in detector arrays. To eliminate the lateral diffusion current, two different approaches were examined. The conventional solution utilized a deep etch process, which etches through the top contact, barrier, and absorber. This deep etch processing scheme eliminated lateral diffusion, but introduced high surface current along the device mesa sidewalls, increasing the dark current. High device failure rate was also observed in deep-etched nBn structures. An alternative approach to limit lateral diffusion used an inverted nBn structure that has its absorber grown above the barrier. Like the shallow etch process on conventional nBn structures, the inverted nBn devices were fabricated with a processing scheme that only etches the top layer (the absorber, in this case) but avoids etching through the barrier. The results show that inverted nBn devices have the advantage of eliminating the lateral diffusion current without introducing elevated surface current.

Leakage current transport mechanism under reverse bias in Au/Ni/GaN Schottky barrier diode

NASA Astrophysics Data System (ADS)

Peta, Koteswara Rao; Kim, Moon Deock

2018-01-01

The leakage current transport mechanism under reverse bias of Au/Ni/GaN Schottky diode is studied using temperature dependent current-voltage (I-V-T) and capacitance-voltage (C-V) characteristics. I-V measurement in this study is in the range of 140 K-420 K in steps of 10 K. A reduction in voltage dependent barrier height and a strong internal electric field in depletion region under reverse bias suggested electric field enhanced thermionic emission in carrier transport via defect states in Au/Ni/GaN SBD. A detailed analysis of reverse leakage current revealed two different predominant transport mechanisms namely variable-range hopping (VRH) and Poole-Frenkel (PF) emission conduction at low (<260 K) and high (>260 K) temperatures respectively. The estimated thermal activation energies (0.20-0.39 eV) from Arrhenius plot indicates a trap assisted tunneling of thermally activated electrons from a deep trap state into a continuum of states associated with each conductive threading dislocation.

Fabrication and high temperature characteristics of ion-implanted GaAs bipolar transistors and ring-oscillators

NASA Technical Reports Server (NTRS)

Doerbeck, F. H.; Yuan, H. T.; Mclevige, W. V.

1981-01-01

Ion implantation techniques that permit the reproducible fabrication of bipolar GaAs integrated circuits are studied. A 15 stage ring oscillator and discrete transistor were characterized between 25 and 400 C. The current gain of the transistor was found to increase slightly with temperature. The diode leakage currents increase with an activation energy of approximately 1 eV and dominate the transistor leakage current 1 sub CEO above 200 C. Present devices fail catastrophically at about 400 C because of Au-metallization.

Conceptual and numerical modeling approach of the Guarani Aquifer System

NASA Astrophysics Data System (ADS)

Rodríguez, L.; Vives, L.; Gomez, A.

2013-01-01

In large aquifers, relevant for their considerable size, regional groundwater modeling remains challenging given geologic complexity and data scarcity in space and time. Yet, it may be conjectured that regional scale groundwater flow models can help in understanding the flow system functioning and the relative magnitude of water budget components, which are important for aquifer management. The Guaraní Aquifer System is the largest transboundary aquifer in South America. It contains an enormous volume of water; however, it is not well known, being difficult to assess the impact of exploitation currently used to supply over 25 million inhabitants. This is a sensitive issue because the aquifer is shared by four countries. Moreover, an integrated groundwater model, and therefore a global water balance, were not available. In this work, a transient regional scale model for the entire aquifer based upon five simplified, equally plausible conceptual models represented by different hydraulic conductivity parametrizations is used to analyze the flow system and water balance components. Combining an increasing number of hydraulic conductivity zones and an appropriate set of boundary conditions, the hypothesis of a continuous sedimentary unit yielded errors within the calibration target in a regional sense. The magnitude of the water budget terms resulted very similar for all parametrizations. Recharge and stream/aquifer fluxes were the dominant components representing, on average, 84.2% of total inflows and 61.4% of total outflows, respectively. However, leakage was small compared to stream discharges of main rivers. For instance, the simulated average leakage for the Uruguay River was 8 m3 s-1 while the observed absolute minimum discharge was 382 m3 s-1. Streams located in heavily pumped regions switched from a gaining condition in early years to a losing condition over time. Water is discharged through the aquifer boundaries, except at the eastern boundary. On average, pumping represented 16.2% of inflows while aquifer storage experienced a small overall increment. The model water balance indicates that the current rate of groundwater withdrawals does not exceed the rate of recharge in a regional sense.

Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling

NASA Astrophysics Data System (ADS)

Racko, Juraj; Benko, Peter; Mikolášek, Miroslav; Granzner, Ralf; Kittler, Mario; Schwierz, Frank; Harmatha, Ladislav; Breza, Juraj

2017-02-01

The contribution employs electrical simulation to assess the effect of the distribution of aluminium in the metal/GaN/AlGaN heterostructure on the leakage current. The heterostructure is characterized by a high density of traps causing an increase of the leakage current consisting of the thermionic emission component and of a non-negligible contribution of trap-assisted tunnelling. The leakage current is highly sensitive to the bending of the potential barrier Ec in the subsurface region of the GaN/AlGaN structure. The band bending is strongly affected by the sheet bound charge at the first GaN/AlGaN/GaN interface due to spontaneous and piezoelectric polarization. The overall charge depends on the concentration of Al, the distribution of Al at the first heterointerface having a strong effect on the formation of the potential barrier.

TID Simulation of Advanced CMOS Devices for Space Applications

NASA Astrophysics Data System (ADS)

Sajid, Muhammad

2016-07-01

This paper focuses on Total Ionizing Dose (TID) effects caused by accumulation of charges at silicon dioxide, substrate/silicon dioxide interface, Shallow Trench Isolation (STI) for scaled CMOS bulk devices as well as at Buried Oxide (BOX) layer in devices based on Silicon-On-Insulator (SOI) technology to be operated in space radiation environment. The radiation induced leakage current and corresponding density/concentration electrons in leakage current path was presented/depicted for 180nm, 130nm and 65nm NMOS, PMOS transistors based on CMOS bulk as well as SOI process technologies on-board LEO and GEO satellites. On the basis of simulation results, the TID robustness analysis for advanced deep sub-micron technologies was accomplished up to 500 Krad. The correlation between the impact of technology scaling and magnitude of leakage current with corresponding total dose was established utilizing Visual TCAD Genius program.

Integrated circuit electrometer and sweep circuitry for an atmospheric probe

NASA Technical Reports Server (NTRS)

Zimmerman, L. E.

1971-01-01

The design of electrometer circuitry using an integrated circuit operational amplifier with a MOSFET input is described. Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp. Factors affecting frequency response leakage resistance, and current stability are discussed, and methods are suggested for increasing response speed and for eliminating leakage resistance and current instabilities. Based on the above, two practical circuits, one having a linear response and the other a logarithmic response, were designed and evaluated experimentally. The design of a sweep circuit to implement mobility measurements using atmospheric probes is presented. A triangular voltage waveform is generated and shaped to contain a step in voltage from zero volts in both positive and negative directions.

Study of the dose rate effect of 180 nm nMOSFETs

NASA Astrophysics Data System (ADS)

He, Bao-Ping; Yao, Zhi-Bin; Sheng, Jiang-Kun; Wang, Zu-Jun; Huang, Shao-Yan; Liu, Min-Bo; Xiao, Zhi-Gang

2015-01-01

Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A “true” dose rate effect (TDRE) is observed. Increased damage is observed at low dose rate (LDR) than at high dose rate (HDR) when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation (STI) is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.

Bidirectional Contrast agent leakage correction of dynamic susceptibility contrast (DSC)-MRI improves cerebral blood volume estimation and survival prediction in recurrent glioblastoma treated with bevacizumab.

PubMed

Leu, Kevin; Boxerman, Jerrold L; Lai, Albert; Nghiemphu, Phioanh L; Pope, Whitney B; Cloughesy, Timothy F; Ellingson, Benjamin M

2016-11-01

To evaluate a leakage correction algorithm for T 1 and T2* artifacts arising from contrast agent extravasation in dynamic susceptibility contrast magnetic resonance imaging (DSC-MRI) that accounts for bidirectional contrast agent flux and compare relative cerebral blood volume (CBV) estimates and overall survival (OS) stratification from this model to those made with the unidirectional and uncorrected models in patients with recurrent glioblastoma (GBM). We determined median rCBV within contrast-enhancing tumor before and after bevacizumab treatment in patients (75 scans on 1.5T, 19 scans on 3.0T) with recurrent GBM without leakage correction and with application of the unidirectional and bidirectional leakage correction algorithms to determine whether rCBV stratifies OS. Decreased post-bevacizumab rCBV from baseline using the bidirectional leakage correction algorithm significantly correlated with longer OS (Cox, P = 0.01), whereas rCBV change using the unidirectional model (P = 0.43) or the uncorrected rCBV values (P = 0.28) did not. Estimates of rCBV computed with the two leakage correction algorithms differed on average by 14.9%. Accounting for T 1 and T2* leakage contamination in DSC-MRI using a two-compartment, bidirectional rather than unidirectional exchange model might improve post-bevacizumab survival stratification in patients with recurrent GBM. J. Magn. Reson. Imaging 2016;44:1229-1237. © 2016 International Society for Magnetic Resonance in Medicine.

Pilot study on preventing anastomotic leakage in stapled gastroesophageal anastomosis

PubMed Central

Huang, Weiming; Liu, Xiangzheng; Li, Jian

2017-01-01

Background This study explored how to improve the surgical technique to reduce or avoid anastomotic leakage. Methods From January 2012 to December 2016, 101 consecutive patients with cancer of the esophagus or gastroesophageal junction underwent stapled gastroesophageal anastomosis. The procedure included creating a tube‐type stomach, fixing an inserted anvil, inspecting mucosa‐to‐mucosa alignment in the lumen under direct vision after firing the stapler, and, if found, manually repairing a rupture of the mucous membrane of the anastomosis. Results A rupture of the mucous membrane of the anastomosis was found in four out of the 101 patients and manually repaired. No postsurgical anastomotic leakage occurred. All patients recovered well and the average postoperative stay was 10.4 days. There was no mortality within 30 days after surgery. Conclusion It is critical to inspect the integrality of the luminal mucous membrane of the anastomosis under direct vision in order to prevent anastomotic leakage in surgical resection of esophageal and gastroesophageal junction malignancies. PMID:29130643

[Reflection on the present study of anastomotic leakage after colorectal surgery].

PubMed

Wu, Zhouqiao; Shi, Jinyao; Li, Ziyu; Ji, Jiafu

Anastomotic leakage is one of the most serious complications of colorectal surgery. Despite progress in available surgical techniques, the morbidity associated with anastomotic leakage remains high. In this review, we summarize the current clinical status of this complication, the problems it causes, and relevant research achievements. To date, a lack of consensus regarding the diagnosis of anastomotic leakage has resulted in varying rates of diagnosis across countries and regions worldwide. Accurately predicting the occurrence of anastomotic leakage using the established risk factors and preoperative scoring systems remains difficult. Many of the described preventive measures, including defunctioning stoma creation, positive air leak testing, and use of effective tissue adhesives, remain controversial; more evidence-based medical information is urgently needed. Delayed diagnoses of anastomotic leakage also remain common in clinical practice. To prevent catastrophic outcomes, such as reoperations or deaths, early diagnosis is critically important. Parameters local to the area of the anastomosis may facilitate early detection of leakage, but their effectiveness is subject to clinical validation. Lastly, the pathological etiology of anastomotic leakage remains to be determined, and its elucidation may inspire innovative interventions that solve this critical surgical complication.

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

NASA Astrophysics Data System (ADS)

Hu, J.; Stoffels, S.; Lenci, S.; Bakeroot, B.; Venegas, R.; Groeseneken, G.; Decoutere, S.

2015-02-01

This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5 V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ϕB increase) together with RON degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.

First principles calculations of La2O3/GaAs interface properties under biaxial strain and hydrostatic pressure

NASA Astrophysics Data System (ADS)

Shi, Li-Bin; Li, Ming-Biao; Xiu, Xiao-Ming; Liu, Xu-Yang; Zhang, Kai-Cheng; Li, Chun-Ran; Dong, Hai-Kuan

2017-04-01

La2O3 is a potential dielectric material with high permittivity (high-κ) for metal-oxide-semiconductor (MOS) devices. However, band offsets and oxide defects should still be concerned. Smaller band offsets and carrier traps increase leakage current, and degenerate performance of the devices. In this paper, the interface behaviors of La2O3/GaAs under biaxial strain and hydrostatic pressure are investigated, which is performed by first principles calculations based on density functional theory (DFT). Strain engineering is attempted to improve performance of the metal/La2O3/GaAs devices. First of all, we creatively realize band alignment of La2O3/GaAs interface under biaxial strain and hydrostatic pressure. The proper biaxial tensile strain can effectively increase valence band offsets (VBO) and conduction band offsets (CBO), which can be used to suppress leakage current. However, the VBO will decrease with the increase of hydrostatic pressure, indicating that performance of the devices is degenerated. Then, a direct tunneling leakage current model is used to investigate current and voltage characteristics of the metal/La2O3/GaAs. The impact of biaxial strain and hydrostatic pressure on leakage current is discussed. At last, formation energies and transition levels of oxygen interstitial (Oi) and oxygen vacancy (VO) in La2O3 are assessed. We investigate how they will affect performance of the devices.

Case Study of Envelope Sealing in Existing Multiunit Structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dentz, J.; Conlin, F.; Podorson, D.

2012-10-01

Envelope air sealing was included in the retrofit of a 244 unit low-rise multifamily housing complex in Durham, N.C. Pre- and post-retrofit enclosure leakage tests were conducted on 51 units and detailed diagnostics were performed on 16. On average, total leakage was reduced by nearly half, from 19.7 ACH50 to 9.4 ACH50. Costs for air sealing were $0.31 per square foot of conditioned floor area, lower than estimates found in the National Residential Efficiency Measures Database (NREMD) and other sources, perhaps due in part to the large-scale production nature of the project. Modeling with BEopt software -- using an estimatemore » of 85% of the envelope air leakage going to the outside (based on guarded tests performed at the site) -- calculated a space conditioning energy cost savings of 15% to 21% due to the air sealing retrofit. Important air leakage locations identified included plumbing and electrical penetrations, dropped ceilings/soffits, windows, ducts and wall-to-floor intersections. Previous repair activity had created significant leakage locations as well. Specifications and a pictorial guide were developed for contractors performing the work.« less

A method of percutaneous vertebroplasty under the guidance of two C-arm fluoroscopes

PubMed Central

Xu, Ren-Jie; Yan, Yong-Qing; Chen, Guang-Xiang; Zou, Tian-Ming; Cai, Xiao-Qiang; Wang, Dong-Lai

2014-01-01

Objective: To compare the clinical application in the percutaneous vertebroplasty under the guidance of one or two C-arm fluoroscopes. Methods: One hundred forty three elderly patients with Osteoporotic vertebral compression fractures (OVCFs) underwent percutaneous vertebroplasty under the guidance of one or two C-arm fluoroscopes. The number of pulsed imagings, the time of operation and the incidence of cement leakage were recorded. Results: The average number of pulsed imagings was 16.00±1.58 vs 13.07±2.00 per patient under the guidance of one vs two C-arm fluoroscopes. The average time of operation was 48.42±5.00 minutes vs 39.70±7.42 minutes per patient under the guidance of one vs two C-arm fluoroscopes. The incidence of cement leakage was 20% vs 15.7% of the patients under the guidance of one vs two C-arm fluoroscopes. The differences in the number of pulsed imagings and the time of operation were statistically significant. The difference in incidence of cement leakage was not statistically significant. Conclusion: The two-fluoroscopic technique reduce the labor cost, the radiation, the time of operation and the operation risk. PMID:24772138

Suppression of Leakage Current of Metal-Insulator-Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer

NASA Astrophysics Data System (ADS)

Tonomura, Osamu; Miki, Hiroshi; Takeda, Ken-ichi

2011-10-01

An Al2O3/SiO buffer layer was incorporated in a metal-insulator-semiconductor (MIS) Ta2O5 capacitor for dynamic random access memory (DRAM) application. Al2O3 was chosen for the buffer layer owing to its high band offset against silicon and oxidation resistance against increase in effective oxide thickness (EOT). It was clarified that post-deposition annealing in nitrogen at 800 °C for 600 s increased the band offset between Al2O3 and the lower electrode and decreased leakage current by two orders of magnitude at 1 V. Furthermore, we predicted and experimentally confirmed that there was an optimized value of y in (Si3N4)y(SiO2)(1-y), which is 0.58, for minimizing the leakage current and EOT of SiON. To clarify the oxidation resistance and appropriate thickness of Al2O3, a TiN/Ta2O5/Al2O3/SiON/polycrystalline-silicon capacitor was fabricated. It was confirmed that the lower electrode was not oxidized during the crystallization annealing of Ta2O5. By setting the Al2O3 thickness to 3.4 nm, the leakage current is lowered below the required value with an EOT of 3.6 nm.

Effects of doping on ferroelectric properties and leakage current behavior of KNN-LT-LS thin films on SrTiO3 substrate

NASA Astrophysics Data System (ADS)

Abazari, M.; Safari, A.

2009-05-01

We report the effects of Ba, Ti, and Mn dopants on ferroelectric polarization and leakage current of (K0.44Na0.52Li0.04)(Nb0.84Ta0.1Sb0.06)O3 (KNN-LT-LS) thin films deposited by pulsed laser deposition. It is shown that donor dopants such as Ba2+, which increased the resistivity in bulk KNN-LT-LS, had an opposite effect in the thin film. Ti4+ as an acceptor B-site dopant reduces the leakage current by an order of magnitude, while the polarization values showed a slight degradation. Mn4+, however, was found to effectively suppress the leakage current by over two orders of magnitude while enhancing the polarization, with 15 and 23 μC/cm2 remanent and saturated polarization, whose values are ˜70% and 82% of the reported values for bulk composition. This phenomenon has been associated with the dual effect of Mn4+ in KNN-LT-LS thin film, by substituting both A- and B-site cations. A detailed description on how each dopant affects the concentrations of vacancies in the lattice is presented. Mn-doped KNN-LT-LS thin films are shown to be a promising candidate for lead-free thin films and applications.

Leakage current phenomena in Mn-doped Bi(Na,K)TiO{sub 3}-based ferroelectric thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walenza-Slabe, J.; Gibbons, B. J., E-mail: brady.gibbons@oregonstate.edu

2016-08-28

Mn-doped 80(Bi{sub 0.5}Na{sub 0.5})TiO{sub 3}-20(Bi{sub 0.5}K{sub 0.5})TiO{sub 3} thin films were fabricated by chemical solution deposition on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, theremore » were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ{sub ion} ≈ 1.7 × 10{sup −12} cm{sup 2} V{sup −1} s{sup −1} and E{sub A,ion} ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.« less

Depression of the Thoracolumbar Posterior Vertebral Body on the Estimation of Cement Leakage in Vertebroplasty and Kyphoplasty Operations

PubMed Central

Chen, Hao; Jia, Pu; Bao, Li; Feng, Fei; Yang, He; Li, Jin-Jun; Tang, Hai

2015-01-01

Background: The cross-section of thoracolumbar vertebral body is kidney-shaped with depressed posterior boundary. The anterior wall of the vertebral canal is separated from the posterior wall of the vertebral body on the lateral X-ray image. This study was designed to determine the sagittal distance between the anterior border of the vertebral canal and the posterior border of the vertebral body (DBCV) and to analyze the potential role of DBCV in the estimation of cement leakage during percutaneous vertebroplasty (PVP) or percutaneous kyphoplasty (PKP). Methods: We retrospectively recruited 233 patients who had osteoporotic vertebral compression fractures and were treated with PVP or PKP. Computed tomography images of T11–L2 normal vertebrae were measured to obtain DBCV. The distance from cement to the posterior wall of the vertebral body (DCPW) of thoracolumbar vertebrae was measured from C-arm images. The selected vertebrae were divided into two groups according to DCPW, with the fracture levels, fracture grades and leakage rates of the two groups compared. A relative operating characteristic (ROC) curve was applied to determine whether the DCPW difference can be used to estimate the degree of cement leakage. The data were processed by statistical software SPSS version 21.0 using independent sample t-test and Chi-square tests. Results: The maximum DBCV was 6.40 mm and the average DBCV was 3.74 ± 0.95 mm. DBCV appeared to be longer in males than in females, but the difference was not statistically significant. The average DCPW of type-B leakage vertebrae (2.59 ± 1.20 mm) was shorter than that of other vertebrae (7.83 ± 2.38 mm, P < 0.001). The leakage rate of group DCPW ≤6.40 mm was lower than that of group DCPW >6.40 mm for type-C and type-S, but much higher for type-B. ROC curve revealed that DCPW only has a predictive value for type-B leakage (area under the curve: 0.98, 95% confidence interval: 0.95–0.99, P < 0.001), and when the cut-off value was 4.05 mm, the diagnostic sensitivity and the specificity were 94.87% and 93.02%, respectively. Conclusions: Depression of the thoracolumbar posterior vertebral body may be informative for the estimation of cement location on C-arm images. To reduce type-B leakage, DCPW should be made longer than DBCV on C-arm images for safety during PVP or PKP. PMID:26612289

Depression of the Thoracolumbar Posterior Vertebral Body on the Estimation of Cement Leakage in Vertebroplasty and Kyphoplasty Operations.

PubMed

Chen, Hao; Jia, Pu; Bao, Li; Feng, Fei; Yang, He; Li, Jin-Jun; Tang, Hai

2015-12-05

The cross-section of thoracolumbar vertebral body is kidney-shaped with depressed posterior boundary. The anterior wall of the vertebral canal is separated from the posterior wall of the vertebral body on the lateral X-ray image. This study was designed to determine the sagittal distance between the anterior border of the vertebral canal and the posterior border of the vertebral body (DBCV) and to analyze the potential role of DBCV in the estimation of cement leakage during percutaneous vertebroplasty (PVP) or percutaneous kyphoplasty (PKP). We retrospectively recruited 233 patients who had osteoporotic vertebral compression fractures and were treated with PVP or PKP. Computed tomography images of T11-L2 normal vertebrae were measured to obtain DBCV. The distance from cement to the posterior wall of the vertebral body (DCPW) of thoracolumbar vertebrae was measured from C-arm images. The selected vertebrae were divided into two groups according to DCPW, with the fracture levels, fracture grades and leakage rates of the two groups compared. A relative operating characteristic (ROC) curve was applied to determine whether the DCPW difference can be used to estimate the degree of cement leakage. The data were processed by statistical software SPSS version 21.0 using independent sample t-test and Chi-square tests. The maximum DBCV was 6.40 mm and the average DBCV was 3.74 ± 0.95 mm. DBCV appeared to be longer in males than in females, but the difference was not statistically significant. The average DCPW of type-B leakage vertebrae (2.59 ± 1.20 mm) was shorter than that of other vertebrae (7.83 ± 2.38 mm, P < 0.001). The leakage rate of group DCPW ≤6.40 mm was lower than that of group DCPW >6.40 mm for type-C and type-S, but much higher for type-B. ROC curve revealed that DCPW only has a predictive value for type-B leakage (area under the curve: 0.98, 95% confidence interval: 0.95-0.99, P < 0.001), and when the cut-off value was 4.05 mm, the diagnostic sensitivity and the specificity were 94.87% and 93.02%, respectively. Depression of the thoracolumbar posterior vertebral body may be informative for the estimation of cement location on C-arm images. To reduce type-B leakage, DCPW should be made longer than DBCV on C-arm images for safety during PVP or PKP.

Intraoperative and postoperative risk factors for anastomotic leakage and pneumonia after esophagectomy for cancer.

PubMed

Goense, L; van Rossum, P S N; Tromp, M; Joore, H C; van Dijk, D; Kroese, A C; Ruurda, J P; van Hillegersberg, R

2017-01-01

Morbidity and mortality after esophagectomy are often related to anastomotic leakage or pneumonia. This study aimed to assess the relationship of intraoperative and postoperative vital parameters with anastomotic leakage and pneumonia after esophagectomy. Consecutive patients who underwent transthoracic esophagectomy with cervical anastomosis for esophageal cancer from January 2012 to December 2013 were analyzed. Univariable and multivariable logistic regression analyses were used to determine potential associations of hemodynamic and respiratory parameters with anastomotic leakage or pneumonia. From a total of 82 included patients, 19 (23%) developed anastomotic leakage and 31 (38%) experienced pneumonia. The single independent factor associated with an increased risk of anastomotic leakage in multivariable analysis included a lower minimum intraoperative pH (OR 0.85, 95% CI 0.77-0.94). An increased risk of pneumonia was associated with a lower mean arterial pressure (MAP) in the first 12 hours after surgery (OR 0.93, 95% CI 0.86-0.99) and a higher maximum intraoperative pH (OR 1.14, 95% CI 1.02-1.27). Interestingly, no differences were noted for the MAP and inotrope requirement between patients with and without anastomotic leakage. A lower minimum intraoperative pH (below 7.25) is associated with an increased risk of anastomotic leakage after esophagectomy, whereas a lower postoperative average MAP (below 83 mmHg) and a higher intraoperative pH (above 7.34) increase the risk of postoperative pneumonia. These parameters indicate the importance of setting strict perioperative goals to be protected intensively. © International Society for Diseases of the Esophagus 2016. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Extensive paternal mtDNA leakage in natural populations of Drosophila melanogaster.

PubMed

Nunes, Maria D S; Dolezal, Marlies; Schlötterer, Christian

2013-04-01

Strict maternal inheritance is considered a hallmark of animal mtDNA. Although recent reports suggest that paternal leakage occurs in a broad range of species, it is still considered an exceptionally rare event. To evaluate the impact of paternal leakage on the evolution of mtDNA, it is essential to reliably estimate the frequency of paternal leakage in natural populations. Using allele-specific real-time quantitative PCR (RT-qPCR), we show that heteroplasmy is common in natural populations with at least 14% of the individuals carrying multiple mitochondrial haplotypes. However, the average frequency of the minor mtDNA haplotype is low (0.8%), which suggests that this pervasive heteroplasmy has not been noticed before due to a lack of power in sequencing surveys. Based on the distribution of mtDNA haplotypes in the offspring of heteroplasmic mothers, we found no evidence for strong selection against one of the haplotypes. We estimated that the rate of paternal leakage is 6% and that at least 100 generations are required for complete sorting of mtDNA haplotypes. Despite the high proportion of heteroplasmic individuals in natural populations, we found no evidence for recombination between mtDNA molecules, suggesting that either recombination is rare or recombinant haplotypes are counter-selected. Our results indicate that evolutionary studies using mtDNA as a marker might be biased by paternal leakage in this species. © 2013 Blackwell Publishing Ltd.

Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

NASA Astrophysics Data System (ADS)

Bae, Tae-Eon; Wakabayashi, Yuki; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Improvement in the performance of Ge-source/Si-channel heterojunction tunneling FETs (TFETs) with high on-current/off-current (I on/I off) ratio and steep subthreshold swing (SS) is demonstrated. In this paper, we experimentally examine the effects of gas ambient [N2 and forming gas (4% H2/N2)] and a doping concentration in the drain regions on the electrical characteristics of Ge/Si heterojunction TFETs. The minimum SS (SSmin) of 70.9 mV/dec and the large I on/I off ratio of 1.4 × 107 are realized by postmetallization annealing in forming gas. Also, the steep SSmin and averaged SS (SSavr) values of 64.2 and 78.4 mV/dec, respectively, are obtained in low drain doping concentration. This improvement is attributable to the reduction in interface state density (D it) in the channel region and to the low leakage current in the drain region.

Effect of surface roughness of trench sidewalls on electrical properties in 4H-SiC trench MOSFETs

NASA Astrophysics Data System (ADS)

Kutsuki, Katsuhiro; Murakami, Yuki; Watanabe, Yukihiko; Onishi, Toru; Yamamoto, Kensaku; Fujiwara, Hirokazu; Ito, Takahiro

2018-04-01

The effects of the surface roughness of trench sidewalls on electrical properties have been investigated in 4H-SiC trench MOSFETs. The surface roughness of trench sidewalls was well controlled and evaluated by atomic force microscopy. The effective channel mobility at each measurement temperature was analyzed on the basis of the mobility model including optical phonon scattering. The results revealed that surface roughness scattering had a small contribution to channel mobility, and at the arithmetic average roughness in the range of 0.4-1.4 nm, there was no correlation between the experimental surface roughness and the surface roughness scattering mobility. On the other hand, the characteristics of the gate leakage current and constant current stress time-dependent dielectric breakdown tests demonstrated that surface morphology had great impact on the long-term reliability of gate oxides.

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

NASA Technical Reports Server (NTRS)

Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre L.; Ferlet-Cavrois, Veronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronald D.; Weller, Robert A.;

Low leakage current Ni/CdZnTe/In diodes for X/ γ-ray detectors

NASA Astrophysics Data System (ADS)

Sklyarchuk, V. M.; Gnatyuk, V. A.; Pecharapa, W.

2018-01-01

The electrical characteristics of the Ni/Cd1-xZnxTe/In structures with a metal-semiconductor rectifying contact are investigated. The diodes, fabricated on the base of In-doped n-type Cd1-xZnxTe (CZT) crystals with resistivity of ∼1010 Ω ṡ cm, have low leakage current and can be used as X/ γ-ray detectors. The rectifying contact was obtained by vacuum deposition of Ni on the semiconductor surface pretreated with argon plasma. The high barrier rectifying contact allowed us to increase applied reverse bias voltage up to 2500 V at the CZT crystal thickness of 1 mm. Dark (leakage) currents of the diodes with the rectifying contact area of 4 mm2 did not exceed 3-5 nA at bias voltage of 2000 V and room temperature. The charge transport mechanisms in the Ni/CZT/In structures have been interpreted as generation-recombination in the space charge region within the range of reverse bias of 5-100 V and as currents limited by space charge at both forward and reverse bias at V >100 V.

Methods and apparatus for measurement of the resistivity of geological formations from within cased wells in presence of acoustic and magnetic energy sources

DOEpatents

Vail, W.B. III.

1991-08-27

Methods and apparatus are provided for measuring the acoustically modulated electronic properties of geological formations and cement layers adjacent to cased boreholes. Current is passed from an electrode in electrical contact with the interior of the borehole casing to an electrode on the surface of the earth. Voltage measuring electrodes in electrical contact with the interior of the casing measure the voltage at various points thereon. The voltage differences between discrete pairs of the voltage measuring electrodes provide a measurement of the leakage current conducted into formation in the vicinity of those electrodes. Simultaneously subjecting the casing and formation to an acoustic source acoustically modulates the leakage current measured thereby providing a measure of the acoustically modulated electronic properties of the adjacent formation. Similarly, methods and apparatus are also described which measure the leakage current into formation while simultaneously subjecting the casing to an applied magnetic field which therefore allows measurement of the magnetically modulated electronic properties of the casing and the adjacent formation. 9 figures.

Methods and apparatus for measurement of the resistivity of geological formations from within cased wells in presence of acoustic and magnetic energy sources

DOEpatents

Vail, III, William B.

1991-01-01

Methods and apparatus are provided for measuring the acoustically modulated electronic properties of geological formations and cement layers adjacent to cased boreholes. Current is passed from an electrode in electrical contact with the interior of the borehole casing to an electrode on the surface of the earth. Voltage measuring electrodes in electrical contact with the interior of the casing measure the voltage at various points thereon. The voltage differences between discrete pairs of the voltage measuring electrodes provide a measurement of the leakage current conducted into formation in the vicinity of those electrodes. Simultaneously subjecting the casing and formation to an acoustic source acoustically modulates the leakage current measured thereby providing a measure of the acoustically modulated electronic properties of the adjacent formation. Similarly, methods and apparatus are also described which measure the leakage current into formation while simultaneously subjecting the casing to an applied magnetic field which therefore allows measurement of the magnetically modulated electronic properties of the casing and the adjacent formation.

IMPACT OF HEATING AND AIR CONDITIONING SYSTEM OPERATION AND LEAKAGE ON VENTILATION AND INTERCOMPARTMENT TRANSPORT: STUDIES IN UNOCCUPIED AND OCCUPIED TENNESSEE VALLEY HOMES

EPA Science Inventory

Forced-air heating and air conditioning (HAC) systems caused an average and maximum increase in air infiltration rates of 1.8- and 4.3-fold, respectively, during brief whole-house studies of tracer gas decay In 39 occupied houses. An average Increase in air infiltration rate of 0...

Improved laparoscopic nephron-sparing surgery for renal cell carcinoma based on the precise anatomy of the nephron.

PubMed

Guo, Gang; Cai, Wei; Zhang, Xu

2016-11-01

The aim of the present study was to investigate a method of laparoscopic nephron-sparing surgery (LNSS) for renal cell carcinoma (RCC) based on the precise anatomy of the nephron, and to decrease the incidence of hemorrhage and urinary leakage. Between January 2012 and December 2013, 31 patients who presented to the General Hospital of the People's Liberation Army (Beijing, China) were treated for RCC. The mean tumor size was 3.4±0.7 cm in diameter (range, 1.2-6.0 cm). During surgery, the renal artery was blocked, and subsequently, an incision in the renal capsule and renal cortex was performed, at 3-5 mm from the tumor edge. Subsequent to the incision of the renal parenchyma, scissors with blunt and sharp edge were used to separate the base of the tumor from the normal renal medulla, in the direction of the ray medullary in the renal pyramids. The basal blood vessels were incised following the hemostasis of the region using bipolar coagulation. The minor renal calyces were stripped carefully and the wound was closed with an absorbable sutures. The arterial occlusion time, duration of surgery, intraoperative bleeding volume, post-operative drainage volume, pathological results and complications were recorded. The surgery was successful for all patients. The estimated average intraoperative bleeding volume was 55.7 ml, the average surgical duration was 95.5 min, the average arterial occlusion time was 21.2 min, the average post-operative drainage volume was 92.3 ml and the average post-operative length of hospital stay was 6.1 days. No hemorrhage or urinary leakage was observed in the patients following the surgery. LNSS for RCC based on the precise anatomy of the nephron was concluded to be effective and feasible. The surgery is useful for the complete removal of tumors and guarantees a negative margin, which may also decrease the incidence of hemorrhage and urinary leakage following surgery.

Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beck, Patrick R.

2010-01-07

Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current ormore » leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.« less

Design and simulation of nanoscale double-gate TFET/tunnel CNTFET

NASA Astrophysics Data System (ADS)

Bala, Shashi; Khosla, Mamta

2018-04-01

A double-gate tunnel field-effect transistor (DG tunnel FET) has been designed and investigated for various channel materials such as silicon (Si), gallium arsenide (GaAs), alminium gallium arsenide (Al x Ga1‑x As) and CNT using a nano ViDES Device and TCAD SILVACO ATLAS simulator. The proposed devices are compared on the basis of inverse subthreshold slope (SS), I ON/I OFF current ratio and leakage current. Using Si as the channel material limits the property to reduce leakage current with scaling of channel, whereas the Al x Ga1‑x As based DG tunnel FET provides a better I ON/I OFF current ratio (2.51 × 106) as compared to other devices keeping the leakage current within permissible limits. The performed silmulation of the CNT based channel in the double-gate tunnel field-effect transistor using the nano ViDES shows better performace for a sub-threshold slope of 29.4 mV/dec as the channel is scaled down. The proposed work shows the potential of the CNT channel based DG tunnel FET as a futuristic device for better switching and high retention time, which makes it suitable for memory based circuits.

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Musolino, M.; Treeck, D. van, E-mail: treeck@pdi-berlin.de; Tahraoui, A.

2016-01-28

We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n junction. These band gap states are located at energies of 570 ± 20 and 840 ± 30 meV below the conduction band minimum. The physical origin of these deep level states is discussed. Themore » temperature-dependent I-V characteristics, acquired between 83 and 403 K, show that different conduction mechanisms cause the observed leakage current. On the basis of all these results, we developed a quantitative physical model for charge transport in the reverse bias regime. By taking into account the mutual interaction of variable range hopping and electron emission from Coulombic trap states, with the latter being described by phonon-assisted tunnelling and the Poole-Frenkel effect, we can model the experimental I-V curves in the entire range of temperatures with a consistent set of parameters. Our model should be applicable to planar GaN-based LEDs as well. Furthermore, possible approaches to decrease the leakage current in NW-LEDs are proposed.« less

Development of advanced seals for space propulsion turbomachinery

NASA Technical Reports Server (NTRS)

Hendricks, R. C.; Liang, A. D.; Childs, D. W.; Proctor, M. P.

1992-01-01

Current activities in seals for space propulsion turbomachinery that the NASA Lewis Research Center sponsors are surveyed. The overall objective is to provide the designer and researcher with the concepts and the data to control seal dynamics and leakage. Included in the program are low-leakage seals, such as the brush seal, the 'ceramic rope' seal, low-leakage seals for liquid oxygen turbopumps, face seals for two phase flow, and swirl brakes for stability. Two major efforts are summarized: a seal dynamics in rotating machinery and an effort in seal code development.

First-principles study on leakage current caused by oxygen vacancies at HfO2/SiO2/Si interface

NASA Astrophysics Data System (ADS)

Takagi, Kensuke; Ono, Tomoya

2018-06-01

The relationship between the position of oxygen vacancies in HfO2/SiO2/Si gate stacks and the leakage current is studied by first-principles electronic-structure and electron-conduction calculations. We find that the increase in the leakage current due to the creation of oxygen vacancies in the HfO2 layer is much larger than that in the SiO2 interlayer. According to previous first-principles total energy calculations, the formation energy of oxygen vacancies is smaller in the SiO2 interlayer than that in the HfO2 layer under the same conditions. Therefore, oxygen vacancies will be attracted from the SiO2 interlayer to minimize the energy, thermodynamically justifying the scavenging technique. Thus, the scavenging process efficiently improves the dielectric constant of HfO2-based gate stacks without increasing the number of oxygen vacancies, which cause the dielectric breakdown.

Numerical analysis and experimental studies on solenoid common rail diesel injector with worn control valve

NASA Astrophysics Data System (ADS)

Krivtsov, S. N.; Yakimov, I. V.; Ozornin, S. P.

2018-03-01

A mathematical model of a solenoid common rail fuel injector was developed. Its difference from existing models is control valve wear simulation. A common rail injector of 0445110376 Series (Cummins ISf 2.8 Diesel engine) produced by Bosch Company was used as a research object. Injector parameters (fuel delivery and back leakage) were determined by calculation and experimental methods. GT-Suite model average R2 is 0.93 which means that it predicts the injection rate shape very accurately (nominal and marginal technical conditions of an injector). Numerical analysis and experimental studies showed that control valve wear increases back leakage and fuel delivery (especially at 160 MPa). The regression models for determining fuel delivery and back leakage effects on fuel pressure and energizing time were developed (for nominal and marginal technical conditions).

Energy efficient face seal

NASA Technical Reports Server (NTRS)

Sehnal, J.; Sedy, J.; Etsion, I.; Zobens, A.

1982-01-01

Torque, face temperature, leakage, and wear of a flat face seal were compared with three coned face seals at pressures up to 2758 kPa and speeds up to 8000 rpm. Axial movement of the mating seal parts was recorded by a digital data acquisition system. The coning of the tungsten carbide primary ring ranged from .51 micro-m to 5.6 micro-m. The torque of the coned face seal balanced to 76.3% was an average 42% lower, the leakage eleven times higher, than that of the standard flat face seal. The reduction of the balance of the coned face seal to 51.3% resulted by decreasing the torque by an additional 44% and increasing leakage 12 to 230 times, depending on the seal shaft speed. No measurable wear was observed on the face of the coned seals.

Capital dissipation minimization for a class of complex irreversible resource exchange processes

NASA Astrophysics Data System (ADS)

Xia, Shaojun; Chen, Lingen

2017-05-01

A model of a class of irreversible resource exchange processes (REPes) between a firm and a producer with commodity flow leakage from the producer to a competitive market is established in this paper. The REPes are assumed to obey the linear commodity transfer law (LCTL). Optimal price paths for capital dissipation minimization (CDM) (it can measure economic process irreversibility) are obtained. The averaged optimal control theory is used. The optimal REP strategy is also compared with other strategies, such as constant-firm-price operation and constant-commodity-flow operation, and effects of the amount of commodity transferred and the commodity flow leakage on the optimal REP strategy are also analyzed. The commodity prices of both the producer and the firm for the CDM of the REPes with commodity flow leakage change with the time exponentially.

[Complications of percutaneous kyphoplasty non-related with bone leakage in treating osteoporotic thoracolumbar vertebral compression fractures].

PubMed

Ru, Xuan-liong; Jiang, Zeng-hui; Gui, Xian-ge; Sun, Qi-cai; Song, Bo-Shan; Lin, Hang; He, Jian

2015-08-01

To analyze the complications of percutaneous kyphoplasty except bone leakge for the treatment of osteoporotic thoracolumbar vertebral compression fractures. From October 2008 to October 2012,178 patients with 224 osteoporotic vertebral compression fractures were treated with percutaneous kyphoplasty under local anethsia. There were 72 males and 106 females,ranging in age from 58 to 92 years old,with an average of 75.3 years,including 93 thoracic vertebrae and 131 lumbar vertebrae. The complications except bone cement leakage were analyzed during operation and after operation. All operations were successful and all patients were followed up from 12 to 60 months with an average of 26.2 months. No death was found. Bone cement leakage occurred in 27 cases, about 15.1% in 178 cases; and complications except bone cement leakage occurred in 15 cases. There was 1 case with cardiac arrest,was completely recovery by cardiopulmonary resuscitation (CPR) immediately; and 1 case with temporary absence of breathing,was recovery after treatment. There were 3 cases with fall of blood pressure and slower of heart rate; 1 case with intestinal obstruction; 2 cases with local hematoma and 1 case with intercostal neuralgia. Vertebral body fractures of 2 cases were split by bone cement and the fractures of adjacent body occurred in 4 cases. It's uncommon complication except bone cement leakge in treatment of osteoporotic thoracolumbar vertebral compression fractures with percutaneous kyphoplasty. The complication of cardiopulmonary system is a high risk in surgery; and cytotoxicity of bone cement,nervous reflex,fat embolism and alteration of intravertebral pressure may be main reasons.

Analysis of the Effects of Calcium or Magnesium on Voltage-Clamp Currents in Perfused Squid Axons Bathed in Solutions of High Potassium

PubMed Central

Rojas, Eduardo; Taylor, Robert E.; Atwater, Illani; Bezanilla, Francisco

1969-01-01

Isolated axons from the squid, Dosidicus gigas, were internally perfused with potassium fluoride solutions. Membrane currents were measured following step changes of membrane potential in a voltage-clamp arrangement with external isosmotic solution changes in the order: potassium-free artificial seawater; potassium chloride; potassium chloride containing 10, 25, 40 or 50, mM calcium or magnesium; and potassium-free artificial seawater. The following results suggest that the currents measured under voltage clamp with potassium outside and inside can be separated into two components and that one of them, the predominant one, is carried through the potassium system. (a) Outward currents in isosmotic potassium were strongly and reversibly reduced by tetraethylammonium chloride. (b) Without calcium or magnesium a progressive increase in the nontime-dependent component of the currents (leakage) occurred. (c) The restoration of calcium or magnesium within 15–30 min decreases this leakage. (d) With 50 mM divalent ions the steady-state current-voltage curve was nonlinear with negative resistance as observed in intact axons in isosmotic potassium. (e) The time-dependent components of the membrane currents were not clearly affected by calcium or magnesium. These results show a strong dependence of the leakage currents on external calcium or magnesium concentration but provide no support for the involvement of calcium or magnesium in the kinetics of the potassium system. PMID:5823216

Analysis of the effects of calcium or magnesium on voltage-clamp currents in perfused squid axons bathed in solutions of high potassium.

PubMed

Rojas, E; Taylor, R E; Atwater, I; Bezanilla, F

1969-10-01

Isolated axons from the squid, Dosidicus gigas, were internally perfused with potassium fluoride solutions. Membrane currents were measured following step changes of membrane potential in a voltage-clamp arrangement with external isosmotic solution changes in the order: potassium-free artificial seawater; potassium chloride; potassium chloride containing 10, 25, 40 or 50, mM calcium or magnesium; and potassium-free artificial seawater. The following results suggest that the currents measured under voltage clamp with potassium outside and inside can be separated into two components and that one of them, the predominant one, is carried through the potassium system. (a) Outward currents in isosmotic potassium were strongly and reversibly reduced by tetraethylammonium chloride. (b) Without calcium or magnesium a progressive increase in the nontime-dependent component of the currents (leakage) occurred. (c) The restoration of calcium or magnesium within 15-30 min decreases this leakage. (d) With 50 mM divalent ions the steady-state current-voltage curve was nonlinear with negative resistance as observed in intact axons in isosmotic potassium. (e) The time-dependent components of the membrane currents were not clearly affected by calcium or magnesium. These results show a strong dependence of the leakage currents on external calcium or magnesium concentration but provide no support for the involvement of calcium or magnesium in the kinetics of the potassium system.

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

NASA Astrophysics Data System (ADS)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing BTBT leakage. With further replacement of raised InGaAs spacers by recessed, doping-graded InP spacers at high field regions, BTBT leakage can be reduced ~100:1. Using the above-mentioned techniques, record high performance InAs MOSFETs with a 2.7 nm InAs channel and a ZrO2 gate dielectric were demonstrated with Ion = 500 microA/microm at Ioff = 100 nA/microm and VDS =0.5 V, showing the highest on-state performance among all the III-V MOSFETs and comparable performance to 22 nm Si FinFETs. Record low leakage InGaAs MOSFETs with recessed InP source/drain spacers were also demonstrated with minimum I off = 60 pA/microm at 30 nm-Lg , and Ion = 150 microA/microm at I off = 1 nA/microm and VDS =0.5 V. This recessed InP source/drain spacer technique improves device scalability and enables III-V MOSFETs for low standby power logic applications. Furthermore, ultra-thin InAs channel MOSFETs were fabricated on Si substrates, exhibiting high yield and high transconductance gm ~2.0 mS/microm at 20 nm- Lg and VDS =0.5 V. With further scaling of gate lengths, a 12 nm-Lg III-V MOSFET has shown maximum Ion/Ioff ratio ~8.3x105 , confirming that III-V MOSFETs are scalable to sub-10-nm technology nodes.

Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

PubMed Central

Lu, Qifeng; Mu, Yifei; Roberts, Joseph W.; Althobaiti, Mohammed; Dhanak, Vinod R.; Wu, Jingjin; Zhao, Chun; Zhao, Ce Zhou; Zhang, Qian; Yang, Li; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

2015-01-01

In this research, the hafnium titanate oxide thin films, TixHf1–xO2, with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C. The approximate deposition rates of 0.2 Å and 0.17 Å per cycle were obtained for titanium oxide and hafnium oxide, respectively. X-ray Photoelectron Spectroscopy (XPS) indicates the formation of GeOx and germanate at the interface. X-ray diffraction (XRD) indicates that all the thin films remain amorphous for this deposition condition. The surface roughness was analyzed using an atomic force microscope (AFM) for each sample. The electrical characterization shows very low hysteresis between ramp up and ramp down of the Capacitance-Voltage (CV) and the curves are indicative of low trap densities. A relatively large leakage current is observed and the lowest leakage current among the four samples is about 1 mA/cm2 at a bias of 0.5 V for a Ti0.9Hf0.1O2 sample. The large leakage current is partially attributed to the deterioration of the interface between Ge and TixHf1–xO2 caused by the oxidation source from HfO2. Consideration of the energy band diagrams for the different materials systems also provides a possible explanation for the observed leakage current behavior. PMID:28793705

A novel model of persistent retinal neovascularization for the development of sustained anti-VEGF therapies.

PubMed

Li, Yong; Busoy, Joanna Marie; Zaman, Ben Alfyan Achirn; Tan, Queenie Shu Woon; Tan, Gavin Siew Wei; Barathi, Veluchamy Amutha; Cheung, Ning; Wei, Jay Ji-Ye; Hunziker, Walter; Hong, Wanjin; Wong, Tien Yin; Cheung, Chui Ming Gemmy

2018-05-28

Anti-vascular endothelial growth factor (VEGF) therapies lead to a major breakthrough in treatment of neovascular retinal diseases such as age-related macular degeneration or diabetic retinopathy. Current management of these conditions require regular and frequent intravitreal injections to prevent disease recurrence once the effect of the injected drug wears off. This has led to a pressing clinical need of developing sustained release formulations or therapies with longer duration. A major drawback in developing such therapies is that the currently available animal models show spontaneous regression of vascular leakage. They therefore not only fail to recapitulate retinal vascular disease in humans, but also prevent to discern if regression is due to prolonged therapeutic effect or simply reflects spontaneous healing. Here, we described the development of a novel rabbit model of persistent retinal neovascularization (PRNV). Retinal Müller glial are essential for maintaining the integrity of the blood-retinal barrier. Intravitreal injection of DL-alpha-aminoadipic acid (DL-AAA), a selective retinal glial (Müller) cell toxin, results in persistent vascular leakage for up to 48 weeks. We demonstrated that VEGF concentrations were significantly increased in vitreous suggesting VEGF plays a significant role in mediating the leakage observed. Intravitreal administration of anti-VEGF drugs (e.g. bevacizumab, ranibizumab and aflibercept) suppresses vascular leakage for 8-10 weeks, before recurrence of leakage to pre-treatment levels. All three anti-VEGF drugs are very effective in re-ducing angiographic leakage in PRNV model, and aflibercept demonstrated a longer duration of action compared with the others, reminiscent of what is observed with these drugs in human in the clinical setting. Therefore, this model provides a unique tool to evaluate novel anti-VEGF formulations and therapies with respect to their duration of action in comparison to the currently used drugs. Copyright © 2018 Elsevier Ltd. All rights reserved.

Improving energy efficiency of Embedded DRAM Caches for High-end Computing Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mittal, Sparsh; Vetter, Jeffrey S; Li, Dong

2014-01-01

With increasing system core-count, the size of last level cache (LLC) has increased and since SRAM consumes high leakage power, power consumption of LLCs is becoming a significant fraction of processor power consumption. To address this, researchers have used embedded DRAM (eDRAM) LLCs which consume low-leakage power. However, eDRAM caches consume a significant amount of energy in the form of refresh energy. In this paper, we propose ESTEEM, an energy saving technique for embedded DRAM caches. ESTEEM uses dynamic cache reconfiguration to turn-off a portion of the cache to save both leakage and refresh energy. It logically divides the cachemore » sets into multiple modules and turns-off possibly different number of ways in each module. Microarchitectural simulations confirm that ESTEEM is effective in improving performance and energy efficiency and provides better results compared to a recently-proposed eDRAM cache energy saving technique, namely Refrint. For single and dual-core simulations, the average saving in memory subsystem (LLC+main memory) on using ESTEEM is 25.8% and 32.6%, respectively and average weighted speedup are 1.09X and 1.22X, respectively. Additional experiments confirm that ESTEEM works well for a wide-range of system parameters.« less

Effects of flow separation and cove leakage on pressure and heat-transfer distributions along a wing-cove-elevon configuration at Mach 6.9. [Langley 8-ft high temperature tunnel test

NASA Technical Reports Server (NTRS)

Deveikis, W. D.

1983-01-01

External and internal pressure and cold-wall heating-rate distributions were obtained in hypersonic flow on a full-scale heat-sink representation of the space shuttle orbiter wing-elevon-cove configuration in an effort to define effects of flow separation on cove aerothermal environment as a function of cove seal leak area, ramp angle, and free-stream unit Reynolds number. Average free-stream Mach number from all tests was 6.9; average total temperature from all tests was 3360 R; free-stream dynamic pressure ranged from about 2 to 9 psi; and wing angle of attack was 5 deg (flow compression). For transitional and turbulent flow separation, increasing cove leakage progressively increased heating rates in the cove. When ingested mass flow was sufficient to force large reductions in extent of separation, increasing cove leakage reduced heating rates in the cove to those for laminar attached flow. Cove heating-rate distributions calculated with a method that assumed laminar developing channel flow agreed with experimentally obtained distributions within root-mean-square differences that varied between 11 and 36 percent where cove walls were parallel for leak areas of 50 and 100 percent.

Electrical leakage detection circuit

DOEpatents

Wild, Arthur

2006-09-05

A method is provided for detecting electrical leakage between a power supply and a frame of a vehicle or machine. The disclosed method includes coupling a first capacitor between a frame and a first terminal of a power supply for a predetermined period of time. The current flowing between the frame and the first capacitor is limited to a predetermined current limit. It is determined whether the voltage across the first capacitor exceeds a threshold voltage. A first output signal is provided when the voltage across the capacitor exceeds the threshold voltage.

Application of Arrester Simulation Device in Training

NASA Astrophysics Data System (ADS)

Baoquan, Zhang; Ziqi, Chai; Genghua, Liu; Wei, Gao; Kaiyue, Wu

2017-12-01

Combining with the arrester simulation device put into use successfully, this paper introduces the application of arrester test in the insulation resistance measurement, counter test, Leakage current test under DC 1mA voltage and leakage current test under 0.75U1mA. By comparing with the existing training, this paper summarizes the arrester simulation device’s outstanding advantages including real time monitoring, multi-type fault data analysis and acousto-optic simulation. It effectively solves the contradiction between authenticity and safety in the existing test training, and provides a reference for further training.

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

NASA Astrophysics Data System (ADS)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Yamamuka, Mikio

2017-06-01

In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and comparatively investigated the cyclic p-GaN width (W p) dependence of their electrical characteristics, including turn-on voltage and reverse leakage current. The MPS diodes with W p of more than 6 µm can turn on at around 3 V. Increasing W p can suppress the reverse leakage current. Moreover, the vertical GaN MPS diode with the breakdown voltage of 2 kV was realized for the first time.

Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-10-01

The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density J G at high oxide fields E ox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler-Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current I PF dominates FN electron tunneling current I FN at oxide electric fields E ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide-semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

Measurements of leakage from Lake Michigan through three control structures near Chicago, Illinois, April-October 1993

USGS Publications Warehouse

Oberg, K.A.; Schmidt, A.R.

1994-01-01

A total of 213 measurements of leakage were made at three control structures near Chicago, Ill.--the Chicago River Controlling Works (CRCW), Thomas J. O'Brien Lock and Dam (O'Brien), and Wilmette Pumping Station (Wilmette)--using acoustic Doppler current profilers (ADCP's) and dye-dilution techniques. The CRCW consists of the Chicago Lock and two sets of sluice gates connected by a network of harbor walls. Leakage measurements were made in April, May, July, September, and October 1993 using an ADCP. The mean and standard deviation of leakage measured by the ADCP for the Chicago Lock river gate were 133 and 39 cubic feet per second, respectively. The mean and standard deviation of the leakage measurements at CRCW were 204 and 70 cubic feet per second, respectively. The mean and standard deviation of leakage measurements at O'Brien on September 17, 1993, were 21 and 10 cubic feet per second, respectively. The mean and standard deviation leakage measured at Wilmette using the ADCP were 59 and 8 cubic feet per second, respectively, in April 1993. After the pump bays at Wilmette were sealed in July 1993, the leakage dropped to less than 15 cubic feet per second in September 1993. Discharge estimated by dye-dilution at the Chicago Lock on July 15, 1993, was 160 cubic feet per second, or within 8 percent of the discharge measured with the ADCP. (USGS)

Polarization leakage in epoch of reionization windows - III. Wide-field effects of narrow-field arrays

NASA Astrophysics Data System (ADS)

Asad, K. M. B.; Koopmans, L. V. E.; Jelić, V.; de Bruyn, A. G.; Pandey, V. N.; Gehlot, B. K.

2018-05-01

Leakage of polarized Galactic diffuse emission into total intensity can potentially mimic the 21-cm signal coming from the epoch of reionization (EoR), as both of them might have fluctuating spectral structure. Although we are sensitive to the EoR signal only in small fields of view, chromatic side-lobes from further away can contaminate the inner region. Here, we explore the effects of leakage into the `EoR window' of the cylindrically averaged power spectra (PS) within wide fields of view using both observation and simulation of the 3C196 and North Celestial Pole (NCP) fields, two observing fields of the LOFAR-EoR project. We present the polarization PS of two one-night observations of the two fields and find that the NCP field has higher fluctuations along frequency, and consequently exhibits more power at high-k∥ that could potentially leak to Stokes I. Subsequently, we simulate LOFAR observations of Galactic diffuse polarized emission based on a model to assess what fraction of polarized power leaks into Stokes I because of the primary beam. We find that the rms fractional leakage over the instrumental k-space is 0.35 {per cent} in the 3C196 field and 0.27 {per cent} in the NCP field, and it does not change significantly within the diameters of 15°, 9°, and 4°. Based on the observed PS and simulated fractional leakage, we show that a similar level of leakage into Stokes I is expected in the 3C196 and NCP fields, and the leakage can be considered to be a bias in the PS.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lingyan, E-mail: l.y.wang@mail.xjtu.edu.cn, E-mail: wren@mail.xjtu.edu.cn; Ren, Wei, E-mail: l.y.wang@mail.xjtu.edu.cn, E-mail: wren@mail.xjtu.edu.cn; Shi, Peng

Lead-free ferroelectric un-doped and doped K{sub 0.5}Na{sub 0.5}NbO{sub 3} (KNN) films with different amounts of manganese (Mn) were prepared by a chemical solution deposition method. The thicknesses of all films are about 1.6 μm. Their phase, microstructure, leakage current behavior, and electrical properties were investigated. With increasing the amounts of Mn, the crystallinity became worse. Fortunately, the electrical properties were improved due to the decreased leakage current density after Mn-doping. The study on leakage behaviors shows that the dominant conduction mechanism at low electric field in the un-doped KNN film is ohmic mode and that at high electric field is space-charge-limitedmore » and Pool-Frenkel emission. After Mn doping, the dominant conduction mechanism at high electric field of KNN films changed single space-charge-limited. However, the introduction of higher amount of Mn into the KNN film would lead to a changed conduction mechanism from space-charge-limited to ohmic mode. Consequently, there exists an optimal amount of Mn doping of 2.0 mol. %. The 2.0 mol. % Mn doped KNN film shows the lowest leakage current density and the best electrical properties. With the secondary ion mass spectroscopies and x-ray photoelectron spectroscopy analyses, the homogeneous distribution in the KNN films and entrance of Mn element in the lattice of KNN perovskite structure were also confirmed.« less

Leakage effects in n-GaAs MESFET with n-GaAs buffer layer

NASA Technical Reports Server (NTRS)

Wang, Y. C.; Bahrami, M.

1983-01-01

Whereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.

Women's experience of using the Mooncup.

PubMed

Stewart, K; Greer, R; Powell, M

2010-04-01

The Mooncup is a menstrual cup that is an alternative to conventional sanitary protection. We aimed to determine whether the Mooncup is tolerated by asking 53 healthy female volunteers to record the frequency of changing sanitary protection and leakage over three menstrual cycles with regular sanitary protection and three cycles with the Mooncup. We measured the frequency of leakage and changing the Mooncup along with acceptability of the Mooncup. A total of 126 baseline cycles and 71 cycles with the Mooncup were recorded. The Mooncup leaked 0.5 times less frequently and required to be changed 2.8 times less frequently, on average, during one menstrual period than regular sanitary protection. Of the participants, 55% will carry on using the Mooncup for sanitary protection. Thus, we have concluded that, the Mooncup is acceptable for most women but could not be used for the objective measurement of menstrual blood loss because of the leakage that did occur.

Three-dimensional supersonic flow around double compression ramp with finite span

NASA Astrophysics Data System (ADS)

Lee, H. S.; Lee, J. H.; Park, G.; Park, S. H.; Byun, Y. H.

2017-01-01

Three-dimensional flows of Mach number 3 around a double-compression ramp with finite span have been investigated numerically. Shadowgraph visualisation images obtained in a supersonic wind tunnel are used for comparison. A three-dimensional Reynolds-averaged Navier-Stokes solver was used to obtain steady numerical solutions. Two-dimensional numerical results are also compared. Four different cases were studied: two different second ramp angles of 30° and 45° in configurations with and without sidewalls, respectively. Results showed that there is a leakage of mass and momentum fluxes heading outwards in the spanwise direction for three-dimensional cases without sidewalls. The leakage changed the flow characteristics of the shock-induced boundary layer and resulted in the discrepancy between the experimental data and two-dimensional numerical results. It is found that suppressing the flow leakage by attaching the sidewalls enhances the two-dimensionality of the experimental data for the double-compression ramp flow.

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

NASA Astrophysics Data System (ADS)

Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid

2018-03-01

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

Leakage and field emission in side-gate graphene field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Bartolomeo, A., E-mail: dibant@sa.infn.it; Iemmo, L.; Romeo, F.

We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO{sub 2}/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO{sub 2} up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current densitymore » as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.« less

Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

NASA Astrophysics Data System (ADS)

Kiyota, Yuji; Itaka, Kenji; Iwashita, Yuta; Adachi, Tetsuya; Chikyow, Toyohiro; Ogura, Atsushi

2011-06-01

We investigated zirconia (ZrO2)-based material libraries in search of new dielectric materials for dynamic random-access memory (DRAM) by combinatorial-pulsed laser deposition (combi-PLD). We found that the substitution of yttrium (Y) to Zr sites in the ZrO2 system suppressed the leakage current effectively. The metal-insulator-metal (MIM) capacitor property of this system showed a leakage current density of less than 5×10-7 A/cm2 and the dielectric constant was 20. Moreover, the addition of titanium (Ti) or tantalum (Ta) to this system caused the dielectric constant to increase to ˜25 within the allowed leakage level of 5×10-7 A/cm2. Therefore, Zr-Y-Ti-O and Zr-Y-Ta-O systems have good potentials for use as new materials with high dielectric constants of DRAM capacitors instead of silicon dioxides (SiO2).

Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis

NASA Astrophysics Data System (ADS)

Meng, Xiao; Wang, Lai; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2016-01-01

Efficiency droop is currently one of the most popular research problems for GaN-based light-emitting diodes (LEDs). In this work, a differential carrier lifetime measurement system is optimized to accurately determine carrier lifetimes (τ) of blue and green LEDs under different injection current (I). By fitting the τ-I curves and the efficiency droop curves of the LEDs according to the ABC carrier rate equation model, the impact of Auger recombination and carrier leakage on efficiency droop can be characterized simultaneously. For the samples used in this work, it is found that the experimental τ-I curves cannot be described by Auger recombination alone. Instead, satisfactory fitting results are obtained by taking both carrier leakage and carriers delocalization into account, which implies carrier leakage plays a more significant role in efficiency droop at high injection level.

Leakage current behavior in lead-free ferroelectric (K,Na)NbO3-LiTaO3-LiSbO3 thin films

NASA Astrophysics Data System (ADS)

Abazari, M.; Safari, A.

2010-12-01

Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200-380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.

Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popovici, M., E-mail: Mihaela.Ioana.Popovici@imec.be; Swerts, J.; Redolfi, A.

2014-02-24

Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electricallymore » active defects and is essential to achieve a low leakage current in the MIM capacitor.« less

Self-compensating design for reduction of timing and leakage sensitivity to systematic pattern dependent variation

NASA Astrophysics Data System (ADS)

Gupta, Puneet; Kahng, Andrew B.; Kim, Youngmin; Sylvester, Dennis

2006-03-01

Focus is one of the major sources of linewidth variation. CD variation caused by defocus is largely systematic after the layout is finished. In particular, dense lines "smile" through focus while isolated lines "frown" in typical Bossung plots. This well-defined systematic behavior of focus-dependent CD variation allows us to develop a self-compensating design methodology. In this work, we propose a novel design methodology that allows explicit compensation of focus-dependent CD variation, either within a cell (self-compensated cells) or across cells in a critical path (self-compensated design). By creating iso and dense variants for each library cell, we can achieve designs that are more robust to focus variation. Optimization with a mixture of iso and dense cell variants is possible both for area and leakage power, with the latter providing an interesting complement to existing leakage reduction techniques such as dual-Vth. We implement both heuristic and Mixed-Integer Linear Programming (MILP) solution methods to address this optimization, and experimentally compare their results. Our results indicate that designing with a self-compensated cell library incurs ~12% area penalty and ~6% leakage increase over original layouts while compensating for focus-dependent CD variation (i.e., the design meets timing constraints across a large range of focus variation). We observe ~27% area penalty and ~7% leakage increase at the worst-case defocus condition using only single-pitch cells. The area penalty of circuits after using either the heuristic or MILP optimization approach is reduced to ~3% while maintaining timing. We also apply our optimizations to leakage, which traditionally shows very large variability due to its exponential relationship with gate CD. We conclude that a mixed iso/dense library combined with a sensitivity-based optimization approach yields much better area/timing/leakage tradeoffs than using a self-compensated cell library alone. Self-compensated design shows an average of 25% leakage reduction at the worst defocus condition for the benchmark designs that we have studied.

Automated Quantitative Characterization of Retinal Vascular Leakage and Microaneurysms in Ultra-widefield Fluorescein Angiography

PubMed Central

Ehlers, Justis P.; Wang, Kevin; Vasanji, Amit; Hu, Ming; Srivastava, Sunil K.

2017-01-01

Summary Ultra-widefield fluorescein angiography (UWFA) is an emerging imaging modality used to characterize pathology in the retinal vasculature such as microaneurysms (MA) and vascular leakage. Despites its potential value for diagnosis and disease surveillance, objective quantitative assessment of retinal pathology by UWFA is currently limited because it requires laborious manual segmentation by trained human graders. In this report, we describe a novel fully automated software platform, which segments MAs and leakage areas in native and dewarped UWFA images with retinal vascular disease. Comparison of the algorithm to human grader generated gold standards demonstrated significant strong correlations for MA and leakage areas (ICC=0.78-0.87 and ICC=0.70-0.86, respectively, p=2.1×10-7 to 3.5×10-10 and p=7.8×10-6 to 1.3×10-9, respectively). These results suggest the algorithm performs similarly to human graders in MA and leakage segmentation and may be of significant utility in clinical and research settings. PMID:28432113

Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

DOE PAGES

King, M. P.; Wu, X.; Eller, Manfred; ...

2016-12-07

Here, total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibitmore » a larger change in off-state leakage current. The “worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.« less

Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, M. P.; Wu, X.; Eller, Manfred

Here, total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibitmore » a larger change in off-state leakage current. The “worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.« less

Indoor-Outdoor Air Leakage of Apartments and Commercial Buildings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Price, P.N.; Shehabi, A.; Chan, R.W.

We compiled and analyzed available data concerning indoor-outdoor air leakage rates and building leakiness parameters for commercial buildings and apartments. We analyzed the data, and reviewed the related literature, to determine the current state of knowledge of the statistical distribution of air exchange rates and related parameters for California buildings, and to identify significant gaps in the current knowledge and data. Very few data were found from California buildings, so we compiled data from other states and some other countries. Even when data from other developed countries were included, data were sparse and few conclusive statements were possible. Little systematicmore » variation in building leakage with construction type, building activity type, height, size, or location within the u.s. was observed. Commercial buildings and apartments seem to be about twice as leaky as single-family houses, per unit of building envelope area. Although further work collecting and analyzing leakage data might be useful, we suggest that a more important issue may be the transport of pollutants between units in apartments and mixed-use buildings, an under-studied phenomenon that may expose occupants to high levels of pollutants such as tobacco smoke or dry cleaning fumes.« less

Reduction of the spatially mutual coupling between dual-polarized patch antennas using coupled metamaterial slabs.

PubMed

Pan, Bai Cao; Tang, Wen Xuan; Qi, Mei Qing; Ma, Hui Feng; Tao, Zui; Cui, Tie Jun

2016-07-22

Mutual coupling inside antenna array is usually caused by two routes: signal leakage via conducting currents on the metallic background or surface wave along substrates; radio leakage received from space between antenna elements. The former one can be depressed by changing the distribution of surface currents, as reported in literatures. But when it comes to the latter one, the radiation-leakage-caused coupling, traditional approaches using circuit manipulation may be inefficient. In this article, we propose and design a new type of decoupling module, which is composed of coupled metamaterial (MTM) slabs. Two classes of MTM particles, the interdigital structure (IS) and the split-ring resonators (SRRs), are adopted to provide the first and second modulations of signal. We validate its function to reduce the radiation leakage between two dual-polarized patch antennas. A prototype is fabricated in a volume with subwavelength scale (0.6λ × 0.3λ × 0.053λ) to provide 7dB improvement for both co-polarization and cross-polarization isolations from 1.95 to 2.2 GHz. The design has good potential for wireless communication and radar systems.

Reduction of the spatially mutual coupling between dual-polarized patch antennas using coupled metamaterial slabs

PubMed Central

Pan, Bai Cao; Tang, Wen Xuan; Qi, Mei Qing; Ma, Hui Feng; Tao, Zui; Cui, Tie Jun

2016-01-01

Mutual coupling inside antenna array is usually caused by two routes: signal leakage via conducting currents on the metallic background or surface wave along substrates; radio leakage received from space between antenna elements. The former one can be depressed by changing the distribution of surface currents, as reported in literatures. But when it comes to the latter one, the radiation-leakage-caused coupling, traditional approaches using circuit manipulation may be inefficient. In this article, we propose and design a new type of decoupling module, which is composed of coupled metamaterial (MTM) slabs. Two classes of MTM particles, the interdigital structure (IS) and the split-ring resonators (SRRs), are adopted to provide the first and second modulations of signal. We validate its function to reduce the radiation leakage between two dual-polarized patch antennas. A prototype is fabricated in a volume with subwavelength scale (0.6λ × 0.3λ × 0.053λ) to provide 7dB improvement for both co-polarization and cross-polarization isolations from 1.95 to 2.2 GHz. The design has good potential for wireless communication and radar systems. PMID:27444147

Magnon cotunneling through a quantum dot

NASA Astrophysics Data System (ADS)

Karwacki, Łukasz

2017-11-01

I consider a single-level quantum dot coupled to two reservoirs of spin waves (magnons). Such systems have been studied recently from the point of view of possible coupling between electronic and magnonic spin currents. However, usually weakly coupled systems were investigated. When coupling between the dot and reservoirs is not weak, then higher order processes play a role and have to be included. Here I consider cotunneling of magnons through a spin-occupied quantum dot, which can be understood as a magnon (spin) leakage current in analogy to leakage currents in charge-based electronics. Particular emphasis has been put on investigating the effect of magnetic field and temperature difference between the magnonic reservoirs.

Space-charge limited current in CdTe thin film solar cell

NASA Astrophysics Data System (ADS)

Li, Qiang; Shen, Kai; Li, Xun; Yang, Ruilong; Deng, Yi; Wang, Deliang

2018-04-01

In this study, we demonstrate that space-charge limited current (SCLC) is an intrinsic current shunting leakage in CdTe thin film solar cells. The SCLC leakage channel, which is formed by contact between the front electrode, CdTe, and the back electrode, acts as a metal-semiconductor-metal (MSM) like transport path. The presence of SCLC leaking microchannels in CdTe leads to a band bending at the MSM structure, which enhances minority carrier recombination and thus decreases the minority carrier lifetime in CdTe thin film solar cells. SCLC was found to be a limiting factor both for the fill factor and the open-circuit voltage of CdTe thin film solar cells.

Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Hanna, Mina J.; Zhao, Han; Lee, Jack C.

2012-10-01

We analyze the anomalous I-V behavior in SiN prepared by plasma enhanced chemical vapor deposition for use as a gate insulator in AlGaN/GaN metal insulator semiconductor heterostructure filed effect transistors (HFETs). We observe leakage current across the dielectric with opposite polarity with respect to the applied electric field once the voltage sweep reaches a level below a determined threshold. This is observed as the absolute minimum of the leakage current does not occur at minimum voltage level (0 V) but occurs earlier in the sweep interval. Curve-fitting analysis suggests that the charge-transport mechanism in this region is Poole-Frenkel current, followed by Schottky emission due to band bending. Despite the current anomaly, the sample devices have shown a notable reduction of leakage current of over 2 to 6 order of magnitudes compared to the standard Schottky HFET. We show that higher pressures and higher silane concentrations produce better films manifesting less trapping. This conforms to our results that we reported in earlier publications. We found that higher chamber pressure achieves higher sheet carrier concentration that was found to be strongly dependent on the trapped space charge at the SiN/GaN interface. This would suggest that a lower chamber pressure induces more trap states into the SiN/GaN interface.

FAST TRACK COMMUNICATION: Deposition temperature effect on electrical properties and interface of high-k ZrO2 capacitor

NASA Astrophysics Data System (ADS)

Kim, Joo-Hyung; Ignatova, Velislava A.; Heitmann, Johannes; Oberbeck, Lars

2008-09-01

The electrical characteristics, i.e. leakage current and capacitance, of ZrO2 based metal-insulator-metal structures, grown at 225, 250 and 275 °C by atomic layer deposition, were studied. The lowest leakage current was obtained at 250 °C deposition temperature, while the highest dielectric constant (k ~ 43) was measured for the samples grown at 275 °C, most probably due to the formation of tetragonal/cubic phases in the ZrO2 layer. We have shown that the main leakage current of these ZrO2 capacitors is governed by the Poole-Frenkel conduction mechanism. It was observed by x-ray photoelectron spectroscopy depth profiling that at 275 °C deposition temperature the oxygen content at and beyond the ZrO2/TiN interface is higher than at lower deposition temperatures, most probably due to oxygen inter-diffusion towards the electrode layer, forming a mixed TiN-TiOxNy interface layer. At and above 275 °C the ZrO2 layer changes its structure and becomes crystalline as proven by XRD analysis.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhi, Ting; Tao, Tao; Liu, Bin, E-mail: bliu@nju.edu.cn, E-mail: rzhang@nju.edu.cn

Through investigating the temperature dependent current-voltage (T-I-V) properties of GaN based blue and green LEDs in this study, we propose an asymmetric tunneling model to understand the leakage current below turn-on voltage (V < 3.2 V): At the forward bias within 1.5 V ∼ 2.1 V (region 1), the leakage current is main attributed to electrons tunneling from the conduction band of n-type GaN layer to the valence band of p-type GaN layer via defect states in space-charge region (SCR); While, at the forward bias within 2 V ∼ 2.4 V (region 2), heavy holes tunneling gradually becomes dominant atmore » low temperature (T < 200K) as long as they can overcome the energy barrier height. The tunneling barrier for heavy holes is estimated to be lower than that for electrons, indicating the heavy holes might only tunnel to the defect states. This asymmetric tunneling model shows a novel carrier transport process, which provides better understanding of the leakage characteristics and is vital for future device improvements.« less

Deposition temperature dependent optical and electrical properties of ALD HfO{sub 2} gate dielectrics pretreated with tetrakisethylmethylamino hafnium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, J.; School of Sciences, Anhui University of Science and Technology, Huainan 232001; He, G., E-mail: hegang@ahu.edu.cn

2015-10-15

Highlights: • ALD-derived HfO{sub 2} gate dielectrics have been deposited on Si substrates. • The leakage current mechanism for different deposition temperature was discussed. • Different emission at different field region has been determined precisely. - Abstract: The effect of deposition temperature on the growth rate, band gap energy and electrical properties of HfO{sub 2} thin film deposited by atomic layer deposition (ALD) has been investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the growth rate and optical constant of ALD-derived HfO{sub 2} gate dielectrics are determined precisely. The deposition temperature dependent electrical properties of HfO{sub 2}more » films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. The leakage current mechanism for different deposition temperature has been discussed systematically. As a result, the optimized deposition temperature has been obtained to achieve HfO{sub 2} thin film with high quality.« less

Effect of La substitution on structural and electrical properties of BiFeO3 thin film

NASA Astrophysics Data System (ADS)

Das, S. R.; Bhattacharya, P.; Choudhary, R. N. P.; Katiyar, R. S.

2006-03-01

The effect of La substitution on the structural and electrical properties of multiferroic BiFeO3 thin films grown on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition has been reported. X-ray diffraction data confirmed the substitutions of La into the Bi site with the elimination of all of the secondary phases. The dielectric constant of the films was systematically increased from 165 to ~350 and the films showed excellent dielectric loss behavior. We observed a gradual increase in the remnant polarization (2Pr) with lanthanum substitution obtaining a maximum value of ~42 μC/cm2 at 20 mol % La incorporation. The leakage current behavior at room temperature of the films was studied and it was found that the leakage current decreased from 10-4 to 10-7 A/cm2 for La-substituted films at a field strength of 50 kV/cm. The reduction of dc leakage current of La-substituted films is explained on the basis of relative phase stability and improved microstructure of the material.

Magnetic, ferroelectric and leakage current properties of gadolinium doped bismuth ferrite thin films by sol-gel method

NASA Astrophysics Data System (ADS)

Chen, Hone-Zern; Kao, Ming-Cheng; Young, San-Lin; Hwang, Jun-Dar; Chiang, Jung-Lung; Chen, Po-Yen

2015-05-01

Bi0.9Gd0.1FeO3 (BGFO) thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by using the sol-gel technology. The effects of annealing temperature (400-700 °C) on microstructure and multiferroic properties of thin films were investigated. The X-ray diffraction analysis showed that the BGFO thin films had an orthorhombic structure. The thin films showed ferroelectric and ferromagnetic properties with remanent polarization (2Pr) of 10 μC/cm2, remnant magnetization (2Mr) of 2.4 emu/g and saturation magnetization (Ms) of 5.3 emu/g. A small leakage current density (J) was 4.64×10-8 A/cm2 under applied field 100 kV/cm. It was found that more than one conduction mechanism is involved in the electric field range used in these experiments. The leakage current mechanisms were controlled by Poole-Frenkel emission in the low electric field region and by Schottky emission from the Pt electrode in the high field region.

An evaluation of an ICCD imager of dynamic range expansion technique and application of insitu procedures for life-time extension

NASA Technical Reports Server (NTRS)

Currie, D. G.

1982-01-01

Research toward practical implementation of the Intensified Charge Coupled Device (ICCD) as a photon-counting array detector for astronomy is reported. The first area of concentration was to determine the rate and extent of the lifetime limiting damage to the CCD caused by the impact of high energy electrons, and to find whether various methods of annealing the damage were productive. The second effort was to determine the performance of the ICCD in a photon-counting mode to produce extended dynamic range measurements. There are two main effects that appear as the practical results of the electron damage to the CCD. One is an increase in the leakage current, i.e., the normal thermal generation of charge carriers in the silicon that provides a background dark signal that adds to the light produced image. In an undamaged CCD, the leakage current is usually fairly uniform across the photosensitive area of the silicon chip, with the exception of various bright pixels which have an anomalous leakage current well above the overall level.

Effects of Double-Leakage Tip Clearance Flow on the Performance of a Compressor Stage with a Large Rotor Tip Gap

NASA Technical Reports Server (NTRS)

Hah, Chunill

2016-01-01

Effects of a large rotor tip gap on the performance of a one and half stage axial compressor are investigated in detail with a numerical simulation based on LES and available PIV data. The current paper studies the main flow physics, including why and how the loss generation is increased with the large rotor tip gap. The present study reveals that when the tip gap becomes large, tip clearance fluid goes over the tip clearance core vortex and enters into the next blade's tip gap, which is called double-leakage tip clearance flow. As the tip clearance flow enters into the adjacent blade's tip gap, a vortex rope with a lower pressure core is generated. This vortex rope breaks up the tip clearance core vortex of the adjacent blade, resulting in a large additional mixing. This double-leakage tip clearance flow occurs at all operating conditions, from design flow to near stall condition, with the large tip gap for the current compressor stage. The double-leakage tip clearance flow, its interaction with the tip clearance core vortex of the adjacent blade, and the resulting large mixing loss are the main flow mechanism of the large rotor tip gap in the compressor. When the tip clearance is smaller, flow near the end wall follows more closely with the main passage flow and this double-leakage tip clearance flow does not happen near the design flow condition for the current compressor stage. When the compressor with a large tip gap operates at near stall operation, a strong vortex rope is generated near the leading edge due to the double-leakage flow. Part of this vortex separates from the path of the tip clearance core vortex and travels from the suction side of the blade toward the pressure side of the blade. This vortex is generated periodically at near stall operation with a large tip gap. As the vortex travels from the suction side to the pressure side of the blade, a large fluctuation of local pressure forces blade vibration. Nonsynchronous blade vibration occurs due to this vortex as the frequency of this vortex generation is not the same as the rotor. The present investigation confirms that this vortex is a part of separated tip clearance vortex, which is caused by the double-leakage tip clearance flow.

Dark current reduction of Ge photodetector by GeO₂ surface passivation and gas-phase doping.

PubMed

Takenaka, Mitsuru; Morii, Kiyohito; Sugiyama, Masakazu; Nakano, Yoshiaki; Takagi, Shinichi

2012-04-09

We have investigated the dark current of a germanium (Ge) photodetector (PD) with a GeO₂ surface passivation layer and a gas-phase-doped n+/p junction. The gas-phase-doped PN diodes exhibited a dark current of approximately two orders of magnitude lower than that of the diodes formed by a conventional ion implantation process, indicating that gas-phase doping is suitable for low-damage PN junction formation. The bulk leakage (Jbulk) and surface leakage (Jsurf) components of the dark current were also investigated. We have found that GeO₂ surface passivation can effectively suppress the dark current of a Ge PD in conjunction with gas-phase doping, and we have obtained extremely low values of Jbulk of 0.032 mA/cm² and Jsurf of 0.27 μA/cm.

A novel, intelligent, pressure-sensing colostomy plug for reducing fecal leakage.

PubMed

Chen, Fei; Li, Zhi-Chao; Li, Qiang; Liang, Fei-Xue; Guo, Xiong-Bo; Huang, Zong-Hai

2015-06-01

This study aims to describe and report the effectiveness of a novel, pressure-sensing colostomy plug for reducing fecal leakage. Nine miniature Tibetan pigs, aged 6-8 months, were given colostomies and divided into three groups (n = 3 each group). A novel pressure-sensing colostomy plug was placed in each pig and set to indicate when intestinal pressures of either 5, 10, or 15 mm Hg, respectively, were reached. When the pressure thresholds were reached, the animals' bowels were examined for the presence of stool and/or stomal leakage, and the data were recorded at weeks 1, 4, and 8 after surgery. The colostomy plug calibrated to 15 mm Hg pressure demonstrated the greatest accuracy in predicting the presence of stool in the bowels of study animals, averaging >90% sensitivity. In general, the sensitivity for predicting the presence of stool did not vary significantly over time, though there was a slight increase in accuracy in the 5 mm Hg group at later time-points. The sensitivity for predicting stool in the bowel did not change significantly over time in any of the three groups. Stomal leakage was found to be inversely proportional to the pressure-sensor setting, in that the 15 mm Hg group exhibited the greatest amount of leakage. This difference, however, was found to be significant only at week 1 postsurgery. The intelligent, pressure-sensing colostomy plug was able to accurately predict the presence of stool in the bowel and maintain continence, allowing negligible leakage. Copyright © 2015 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

Origins and trends in ethane and propane in the United Kingdom from 1993 to 2012

NASA Astrophysics Data System (ADS)

Derwent, R. G.; Field, R. A.; Dumitrean, P.; Murrells, T. P.; Telling, S. P.

2017-05-01

Continuous, high frequency in situ observations of ethane and propane began in the United Kingdom in 1993 and have continued through to the present day at a range of kerbside, urban background and rural locations. Whilst other monitored C2 - C8 hydrocarbons have shown dramatic declines in concentrations by close to or over an order of magnitude, ethane and propane levels have remained at or close to their 1993 values. Urban ethane sources appear to be dominated by natural gas leakage. Background levels of ethane associated with long range transport are rising. However, natural gas leakage is not the sole source of urban propane. Oil and gas operations lead to elevated propane levels in urban centres when important refinery operations are located nearby. Weekend versus weekday average diurnal curves for ethane and propane at an urban background site in London show the importance of natural gas leakage for both ethane and propane, and road traffic sources for propane. The road traffic source of propane was tentatively identified as arising from petrol-engined motor vehicle refuelling and showed a strong downwards trend at the long-running urban background and rural sites. The natural gas leakage source of ethane and propane in the observations exhibits an upwards trend whereas that in the UK emission inventory trends downwards. Also, inventory emissions for natural gas leakage appeared to be significantly underestimated compared with the observations. In addition, the observed ethane to propane ratio found here for natural gas leakage strongly disagreed with the inventory ratio.

A harmonic pulse testing method for leakage detection in deep subsurface storage formations

NASA Astrophysics Data System (ADS)

Sun, Alexander Y.; Lu, Jiemin; Hovorka, Susan

2015-06-01

Detection of leakage in deep geologic storage formations (e.g., carbon sequestration sites) is a challenging problem. This study investigates an easy-to-implement frequency domain leakage detection technology based on harmonic pulse testing (HPT). Unlike conventional constant-rate pressure interference tests, HPT stimulates a reservoir using periodic injection rates. The fundamental principle underlying HPT-based leakage detection is that leakage modifies a storage system's frequency response function, thus providing clues of system malfunction. During operations, routine HPTs can be conducted at multiple pulsing frequencies to obtain experimental frequency response functions, using which the possible time-lapse changes are examined. In this work, a set of analytical frequency response solutions is derived for predicting system responses with and without leaks for single-phase flow systems. Sensitivity studies show that HPT can effectively reveal the presence of leaks. A search procedure is then prescribed for locating the actual leaks using amplitude and phase information obtained from HPT, and the resulting optimization problem is solved using the genetic algorithm. For multiphase flows, the applicability of HPT-based leakage detection procedure is exemplified numerically using a carbon sequestration problem. Results show that the detection procedure is applicable if the average reservoir conditions in the testing zone stay relatively constant during the tests, which is a working assumption under many other interpretation methods for pressure interference tests. HPT is a cost-effective tool that only requires periodic modification of the nominal injection rate. Thus it can be incorporated into existing monitoring plans with little additional investment.

Dose distribution and mapping with 3D imaging presentation in intraoral and panoramic examinations

NASA Astrophysics Data System (ADS)

Chen, Hsiu-Ling; Huang, Yung-Hui; Wu, Tung-Hsin; Wang, Shih-Yuan; Lee, Jason J. S.

2011-10-01

In current medical imaging applications, high quality images not only provide more diagnostic value for anatomic delineation but also offer functional information for treatment direction. However, this approach would potentially subscribe higher radiation dose in dental radiographies, which has been putatively associated with low-birth-weight during pregnancy, which affects the hypothalamus-pituitary-thyroid axis or thereby directly affects the reproductive organs. The aim of this study was to apply the high resolution 3-D image mapping technique to evaluate radiation doses from the following aspects: (1) verifying operating parameters of dental X-ray units, (2) measuring the leakage radiations and (3) mapping dose with 3-D radiographic imaging to evaluate dose distribution in head and neck regions. From the study results, we found that (1) leakage radiation from X-ray units was about 21.31±15.24 mR/h (<100 mR/h), (2) error of actual tube voltage for 60 kVp setting was from 0.2% to 6.5%, with an average of 2.5% (<7%) and (3) the error of exposure time for a 0.5-1.5 s setting was within 0.7-8.5%, with an average of 7.3% (<10%) error as well. Our 3-D dose mapping demonstrated that dose values were relatively lower in soft tissues and higher in bone surfaces compared with other investigations. Multiple causes could contribute to these variations, including irradiation geometry, image equipment and type of technique applied, etc. From the results, we also observed that larger accumulated doses were presented in certain critical organs, such as salivary gland, thyroid gland and bone marrow. Potential biological affects associated with these findings warrant further investigation.

Is routine postoperative gastrografin study needed after laparoscopic sleeve gastrectomy? Experience of 712 cases.

PubMed

Wahby, M; Salama, A F; Elezaby, A F; Belgrami, F; Abd Ellatif, M E; El-Kaffas, H F; Al-Katary, M

2013-11-01

The current standard of care is to perform a postoperative gastrografin study following laparoscopic sleeve gastrectomy (LSG) to detect leakage or obstruction. This study evaluated the usefulness of this routine procedure. A retrospective chart review was performed in December 2012. All patients had routine intraoperative methylene blue testing to check for possible leakage from the staple line, and any leaking points were oversewn. We also performed postoperative contrast study (gastrografin) routinely in the first 24-48 h for all patients. From June 2007 to December 2012, 712 cases underwent LSG during the study period. Patients included in this study were 556 women (78.1%) and 156 men (21.9%). The mean age was 35 years. The mean BMI was 48 kg/m2. The operative time was 107 ± 29 min, and there were no conversions to open surgery. Intraoperative methylene blue test detected leakage in 28 cases (3.93%). Postoperative contrast study (gastrografin) was negative for leakage in all cases. Computed tomography (CT) scan with oral contrast study detected leakage in 1.4% (ten cases); none of these cases were detected by regular contrast study. Our study showed that intraoperative methylene blue test for leakage is a very sensitive and effective method for detecting leakage during sleeve gastrectomy and should be done routinely in all cases. Routine postoperative contrast study is not needed to detect leakage unless clinically indicated in selected cases, and in such cases contrast-enhanced CT scans are the modality of choice.

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

PubMed

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

Dielectric property study of poly(4-vinylphenol)-graphene oxide nanocomposite thin film

NASA Astrophysics Data System (ADS)

Roy, Dhrubojyoti

2018-05-01

Thin film capacitor device having a sandwich structure of indium tin oxide (ITO)-coated glass/polymer or polymer nanocomposite /silver has been fabricated and their dielectric and leakage current properties has been studied. The dielectric properties of the capacitors were characterized for frequencies ranging from 1 KHz to 1 MHz. 5 wt% Poly(4-vinylphenol)(PVPh)-Graphene (GO) nanocomposite exhibited an increase in dielectric constant to 5.6 and small rise in dielectric loss to around˜0.05 at 10 KHz w.r.t polymer. The DC conductivity measurements reveal rise of leakage current in nanocomposite.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majzoobi, A.; Joshi, R. P., E-mail: ravi.joshi@ttu.edu; Neuber, A. A.

Particle-in-cell simulations are performed to analyze the efficiency, output power and leakage currents in a 12-Cavity, 12-Cathode rising-sun magnetron with diffraction output (MDO). The central goal is to conduct a parameter study of a rising-sun magnetron that comprehensively incorporates performance enhancing features such as transparent cathodes, axial extraction, the use of endcaps, and cathode extensions. Our optimum results demonstrate peak output power of about 2.1 GW, with efficiencies of ∼70% and low leakage currents at a magnetic field of 0.45 Tesla, a 400 kV bias with a single endcap, for a range of cathode extensions between 3 and 6 centimeters.

Results of More Than 11,800 Sleeve Gastrectomies: Data Analysis of the German Bariatric Surgery Registry.

PubMed

Stroh, Christine; Köckerling, Ferdinand; Volker, Lange; Frank, Benedix; Stefanie, Wolff; Christian, Knoll; Christiane, Bruns; Thomas, Manger

2016-05-01

Laparoscopic sleeve gastrectomy (SG) is an upcoming procedure in bariatric surgery and is currently performed worldwide. Staple line leakage, as the most frequent and most feared complication, is still a major concern. Since 2005 data from patients undergoing bariatric procedures in Germany have been prospectively registered in an online database and analyzed. All patients who had undergone primary SG within a 7-year period were considered for analysis. Using the German Bariatric Surgery Registry, data from more than 11,800 SGs were collected between January 1, 2005, and December 31, 2013. Staple line leak rate decreased from 6.5% to 1.4%. Male sex, higher body mass index, concomitant sleep apnea, conversion to laparotomy, longer operation time, a combination of buttresses and oversewing, and the occurrence of intraoperative complications were associated with a significantly higher leakage rate compared with when using either buttresses or oversewing alone. On multivariable analysis, operation time and year of procedure only had a significant impact on staple line leakage rate. Owing to the growing experience a constant decrease in the leakage rate after SG has been observed. Staple line disruption may still lead to sepsis, multiorgan dysfunction, and increased mortality. The results of the current study demonstrated that there are factors that increase the risk of leakage and which would enable surgeons to define risk groups, select patients more carefully, and offer closer follow-up during the postoperative course with early recognition and adequate treatment.

Transparent nanotubular capacitors based on transplanted anodic aluminum oxide templates.

PubMed

Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Wu, Wenhui; Yue, Jin; Liu, Chang

2015-03-11

Transparent AlZnO/Al2O3/AlZnO nanocapacitor arrays have been fabricated by atomic layer deposition in anodic aluminum oxide templates transplanted on the AlZnO/glass substrates. A high capacitance density of 37 fF/μm(2) is obtained, which is nearly 5.8 times bigger than that of planar capacitors. The capacitance density almost remains the same in a broad frequency range from 1 kHz to 200 kHz. Moreover, a low leakage current density of 1.7 × 10(-7) A/cm(2) at 1 V has been achieved. The nanocapacitors exhibit an average optical transmittance of more than 80% in the visible range, and thus open the door to practical applications in transparent integrated circuits.

Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3.

PubMed

Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Yue, Jin; Liu, Chang

2015-01-01

Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

Three-dimensional Navier-Stokes simulations of turbine rotor-stator interaction

NASA Technical Reports Server (NTRS)

Rai, Man Mohan

1988-01-01

Fluid flows within turbomachinery tend to be extremely complex in nature. Understanding such flows is crucial to improving current designs of turbomachinery. The computational approach can be used to great advantage in understanding flows in turbomachinery. A finite difference, unsteady, thin layer, Navier-Stokes approach to calculating the flow within an axial turbine stage is presented. The relative motion between the stator and rotor airfoils is made possible with the use of patched grids that move relative to each other. The calculation includes endwall and tip leakage effects. An introduction to the rotor-stator problem and sample results in the form of time averaged surface pressures are presented. The numerical data are compared with experimental data and the agreement between the two is found to be good.

Energy Efficient Commercial Refrigeration with Carbon Dioxide Refrigerant and Scroll Expanders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dieckmann, John

Current supermarket refrigeration systems are built around conventional fluorocarbon refrigerants – HFC-134a and the HFC blends R-507 and R404A, which replaced the CFC refrigerants, R-12 and R-502, respectively, used prior to the Montreal Protocol phase out of ozone depleting substances. While the HFC refrigerants are non-ozone depleting, they are strong greenhouse gases, so there has been continued interest in replacing them, particularly in applications with above average refrigerant leakage. Large supermarket refrigeration systems have proven to be particularly difficult to maintain in a leak-tight condition. Refrigerant charge losses of 15% of total charge per year are the norm, making themore » global warming impact of refrigerant emissions comparable to that associated with the energy consumption of these systems.« less

Development of an ultrasmall C-band linear accelerator guide for a four-dimensional image-guided radiotherapy system with a gimbaled x-ray head.

PubMed

Kamino, Yuichiro; Miura, Sadao; Kokubo, Masaki; Yamashita, Ichiro; Hirai, Etsuro; Hiraoka, Masahiro; Ishikawa, Junzo

2007-05-01

We are developing a four-dimensional image-guided radiotherapy system with a gimbaled x-ray head. It is capable of pursuing irradiation and delivering irradiation precisely with the help of an agile moving x-ray head on the gimbals. Requirements for the accelerator guide were established, system design was developed, and detailed design was conducted. An accelerator guide was manufactured and basic beam performance and leakage radiation from the accelerator guide were evaluated at a low pulse repetition rate. The accelerator guide including the electron gun is 38 cm long and weighs about 10 kg. The length of the accelerating structure is 24.4 cm. The accelerating structure is a standing wave type and is composed of the axial-coupled injector section and the side-coupled acceleration cavity section. The injector section is composed of one prebuncher cavity, one buncher cavity, one side-coupled half cavity, and two axial coupling cavities. The acceleration cavity section is composed of eight side-coupled nose reentrant cavities and eight coupling cavities. The electron gun is a diode-type gun with a cerium hexaboride (CeB6) direct heating cathode. The accelerator guide can be operated without any magnetic focusing device. Output beam current was 75 mA with a transmission efficiency of 58%, and the average energy was 5.24 MeV. Beam energy was distributed from 4.95 to 5.6 MeV. The beam profile, measured 88 mm from the beam output hole on the axis of the accelerator guide, was 0.7 mm X 0.9 mm full width at half maximum (FWHM) width. The beam loading line was 5.925 (MeV)-Ib (mA) X 0.00808 (MeV/mA), where Ib is output beam current. The maximum radiation leakage of the accelerator guide at 100 cm from the axis of the accelerator guide was calculated as 0.33 cGy/min at the rated x-ray output of 500 cGy/min from the measured value. This leakage requires no radiation shielding for the accelerator guide itself per IEC 60601-2-1.

Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach

NASA Astrophysics Data System (ADS)

Molaei Imen Abadi, Rouzbeh; Sedigh Ziabari, Seyed Ali

2016-11-01

In this paper, a first qualitative study on the performance characteristics of dual-work function gate junctionless TFET (DWG-JLTFET) on the basis of energy band profile modulation is investigated. A dual-work function gate technique is used in a JLTFET in order to create a downward band bending on the source side similar to PNPN structure. Compared with the single-work function gate junctionless TFET (SWG-JLTFET), the numerical simulation results demonstrated that the DWG-JLTFET simultaneously optimizes the ON-state current, the OFF-state leakage current, and the threshold voltage and also improves average subthreshold slope. It is illustrated that if appropriate work functions are selected for the gate materials on the source side and the drain side, the JLTFET exhibits a considerably improved performance. Furthermore, the optimization design of the tunnel gate length ( L Tun) for the proposed DWG-JLTFET is studied. All the simulations are done in Silvaco TCAD for a channel length of 20 nm using the nonlocal band-to-band tunneling (BTBT) model.

Correlating antimicrobial activity and model membrane leakage induced by nylon-3 polymers and detergents

PubMed Central

Hovakeemian, Sara G.; Liu, Runhui; Gellman, Samuel H.; Heerklotz, Heiko

2015-01-01

Most antimicrobial peptides act upon target microorganisms by permeabilizing their membranes. The mode of action is often assessed by vesicle leakage experiments that use model membranes, with the assumption that biological activity arises from permeabilization of the lipid bilayer. The current work aims to extend the interpretation of vesicle leakage results and examine the correlation between vesicle leakage and antimicrobial activity. To this end, we used a lifetime-based leakage assay with calcein-loaded vesicles to study the membrane permeabilizing properties of a novel antifungal polymer poly-NM, two of its analogs, and a series of detergents. In conjunction, the biological activities of these compounds against Candida albicans were assessed and correlated with data from vesicle leakage. Poly-NM induces all-or-none leakage in polar yeast lipid vesicles at the polymer’s MIC, 3 μg/mL. At this and higher concentrations, complete leakage after an initial lag time was observed. Concerted activity tests imply that this polymer acts independently of the detergent octyl glucoside (OG) for both vesicle leakage and activity against C. albicans spheroplasts. In addition, Poly-NM was found to have negligible activity against zwitterionic vesicles and red blood cells. Our results provide a consistent, detailed picture of the mode of action of Poly-NM: this polymer induces membrane leakage by electrostatic lipid clustering. In contrast, Poly-MM:CO, a nylon-3 polymer comprised of both cationic and hydrophobic segments, seems to act by a different mechanism that involves membrane asymmetry stress. Vesicle leakage for this polymer is transient (limited to <100%) and graded, non-specific among zwitterionic and polar yeast lipid vesicles, additive with detergent action, and correlates poorly with biological activity. Based on these results, we conclude that comprehensive leakage experiments can provide a detailed description of the mode of action of membrane permeabilizing compounds. Without this thorough approach, it would have been logical to assume that the two nylon-3 polymers we examined act via similar mechanisms; it is surprising that their mechanisms are so distinct. Some, but not all mechanisms of vesicle permeabilization allow for antimicrobial activity. PMID:26234884

Correlating antimicrobial activity and model membrane leakage induced by nylon-3 polymers and detergents.

PubMed

Hovakeemian, Sara G; Liu, Runhui; Gellman, Samuel H; Heerklotz, Heiko

2015-09-14

Most antimicrobial peptides act upon target microorganisms by permeabilizing their membranes. The mode of action is often assessed by vesicle leakage experiments that use model membranes, with the assumption that biological activity correlates with the permeabilization of the lipid bilayer. The current work aims to extend the interpretation of vesicle leakage results and examine the correlation between vesicle leakage and antimicrobial activity. To this end, we used a lifetime-based leakage assay with calcein-loaded vesicles to study the membrane permeabilizing properties of a novel antifungal polymer poly-NM, two of its analogs, and a series of detergents. In conjunction, the biological activities of these compounds against Candida albicans were assessed and correlated with data from vesicle leakage. Poly-NM induces all-or-none leakage in polar yeast lipid vesicles at the polymer's MIC, 3 μg mL(-1). At this and higher concentrations, complete leakage after an initial lag time was observed. Concerted activity tests imply that this polymer acts independently of the detergent octyl glucoside (OG) for both vesicle leakage and activity against C. albicans spheroplasts. In addition, poly-NM was found to have negligible activity against zwitterionic vesicles and red blood cells. Our results provide a consistent, detailed picture of the mode of action of poly-NM: this polymer induces membrane leakage by electrostatic lipid clustering. In contrast, poly-MM:CO, a nylon-3 polymer comprised of both cationic and hydrophobic segments, seems to act by a different mechanism that involves membrane asymmetry stress. Vesicle leakage for this polymer is transient (limited to <100%) and graded, non-specific among zwitterionic and polar yeast lipid vesicles, additive with detergent action, and correlates poorly with biological activity. Based on these results, we conclude that comprehensive leakage experiments can provide a detailed description of the mode of action of membrane permeabilizing compounds. Without this thorough approach, it would have been logical to assume that the two nylon-3 polymers we examined act via similar mechanisms; it is surprising that their mechanisms are so distinct. Some, but not all mechanisms of vesicle permeabilization allow for antimicrobial activity.

A 3D CZT high resolution detector for x- and gamma-ray astronomy

NASA Astrophysics Data System (ADS)

Kuvvetli, I.; Budtz-Jørgensen, C.; Zappettini, A.; Zambelli, N.; Benassi, G.; Kalemci, E.; Caroli, E.; Stephen, J. B.; Auricchio, N.

2014-07-01

At DTU Space we have developed a high resolution three dimensional (3D) position sensitive CZT detector for high energy astronomy. The design of the 3D CZT detector is based on the CZT Drift Strip detector principle. The position determination perpendicular to the anode strips is performed using a novel interpolating technique based on the drift strip signals. The position determination in the detector depth direction, is made using the DOI technique based the detector cathode and anode signals. The position determination along the anode strips is made with the help of 10 cathode strips orthogonal to the anode strips. The position resolutions are at low energies dominated by the electronic noise and improve therefore with increased signal to noise ratio as the energy increases. The achievable position resolution at higher energies will however be dominated by the extended spatial distribution of the photon produced ionization charge. The main sources of noise contribution of the drift signals are the leakage current between the strips and the strip capacitance. For the leakage current, we used a metallization process that reduces the leakage current by means of a high resistive thin layer between the drift strip electrodes and CZT detector material. This method was applied to all the proto type detectors and was a very effective method to reduce the surface leakage current between the strips. The proto type detector was recently investigated at the European Synchrotron Radiation Facility, Grenoble which provided a fine 50 × 50 μm2 collimated X-ray beam covering an energy band up to 600 keV. The Beam positions are resolved very well with a ~ 0.2 mm position resolution (FWHM ) at 400 keV in all directions.

Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors

NASA Astrophysics Data System (ADS)

Hourdakis, E.; Koutsoureli, M.; Papaioannou, G.; Nassiopoulou, A. G.

2018-06-01

Barrier-type anodic alumina thin films are interesting for use in high capacitance density metal-insulator-metal capacitors due to their excellent dielectric properties at small thickness. This thickness is easily controlled by the anodization voltage. In previous papers we studied the main parameters of interest of the Al/barrier-type anodic alumina/Al structure for use in RF applications and showed the great potential of barrier-type anodic alumina in this respect. In this paper, we investigated in detail charging/discharging processes and leakage current of the above dielectric material. Two different sets of metal-insulator-metal capacitors were studied, namely, with the top Al electrode being either e-gun deposited or sputtered. The dielectric constant of the barrier-type anodic alumina was found at 9.3. Low leakage current was observed in all samples studied. Furthermore, depending on the film thickness, field emission following the Fowler-Nordheim mechanism was observed above an applied electric field. Charging of the anodic dielectric was observed, occurring in the bulk of the anodic layer. The stored charge was of the order of few μC/cm2 and the calculated trap density ˜2 × 1018 states/cm3, the most probable origin of charge traps being, in our opinion, positive electrolyte ions trapped in the dielectric during anodization. We do not think that oxygen vacancies play an important role, since their existence would have a more important impact on the leakage current characteristics, such as resistive memory effects or significant changes during annealing, which were not observed. Finally, discharging characteristic times as high as 5 × 109 s were measured.

P-type doping of GaN(000\\bar{1}) by magnesium ion implantation

NASA Astrophysics Data System (ADS)

Narita, Tetsuo; Kachi, Tetsu; Kataoka, Keita; Uesugi, Tsutomu

2017-01-01

Magnesium ion implantation has been performed on a GaN(000\\bar{1}) substrate, whose surface has a high thermal stability, thus allowing postimplantation annealing without the use of a protective layer. The current-voltage characteristics of p-n diodes fabricated on GaN(000\\bar{1}) showed distinct rectification at a turn-on voltage of about 3 V, although the leakage current varied widely among the diodes. Coimplantation with magnesium and hydrogen ions effectively suppressed the leakage currents and device-to-device variations. In addition, an electroluminescence band was observed at wavelengths shorter than 450 nm for these diodes. These results provide strong evidence that implanted magnesium ions create acceptors in GaN(000\\bar{1}).

Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

NASA Technical Reports Server (NTRS)

Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

1998-01-01

The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

Estimation of steady-state leakage current in polycrystalline PZT thin films

NASA Astrophysics Data System (ADS)

Podgorny, Yury; Vorotilov, Konstantin; Sigov, Alexander

2016-09-01

Estimation of the steady state (or "true") leakage current Js in polycrystalline ferroelectric PZT films with the use of the voltage-step technique is discussed. Curie-von Schweidler (CvS) and sum of exponents (Σ exp ) models are studied for current-time J (t) data fitting. Σ exp model (sum of three or two exponents) gives better fitting characteristics and provides good accuracy of Js estimation at reduced measurement time thus making possible to avoid film degradation, whereas CvS model is very sensitive to both start and finish time points and give in many cases incorrect results. The results give rise to suggest an existence of low-frequency relaxation processes in PZT films with characteristic duration of tens and hundreds of seconds.

RADON PRESSURE DIFFERENTIAL PROJECT - PHASE I - FLORIDA RESEARCH PROGRAM

EPA Science Inventory

The report gives results of tests on 70 central Florida houses to assess and characterize pressure differentials in new (age 5 years or less) Florida houses. Blower door tests determined house airtightness and air distribution system leakage. The 70 houses had an average airtight...

Buried structure for increasing fabrication performance of micromaterial by electromigration

NASA Astrophysics Data System (ADS)

Kimura, Yasuhiro; Saka, Masumi

2016-06-01

The electromigration (EM) technique is a physical synthetic growth method for micro/nanomaterials. EM causes atomic diffusion in a metal line by high-density electron flows. The intentional control of accumulation and relaxation of atoms by EM can lead to the fabrication of a micro/nanomaterial. TiN passivation has been utilized as a component of sample in the EM technique. Although TiN passivation can simplify the cumbersome processes for preparing the sample, the leakage of current naturally occurs because of the conductivity of TiN as a side effect and decreases the performance of micro/nanomaterial fabrication. In the present work, we propose a buried structure, which contributes to significantly decreasing the current for fabricating an Al micromaterial by confining the current flow in the EM technique. The fabrication performance was evaluated based on the threshold current for fabricating an Al micromaterial using the buried structure and the previous structure with the leakage of current.

Investigating the origin of efficiency droop by profiling the temperature across the multi-quantum well of an operating light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Euihan; Hwang, Gwangseok; Chung, Jaehun

2015-01-26

Performance degradation resulting from efficiency droop during high-power operation is a critical problem in the development of high-efficiency light-emitting diodes (LEDs). In order to resolve the efficiency droop and increase the external quantum efficiency of LEDs, the droop's origin should be identified first. To experimentally investigate the cause of efficiency droop, we used null-point scanning thermal microscopy to quantitatively profile the temperature distribution on the cross section of the epi-layers of an operating GaN-based vertical LED with nanoscale spatial resolution at four different current densities. The movement of temperature peak towards the p-GaN side as the current density increases suggestsmore » that more heat is generated by leakage current than by Auger recombination. We therefore suspect that at higher current densities, current leakage becomes the dominant cause of the droop problem.« less

A prospective randomised study comparing the jubilee dressing method to a standard adhesive dressing for total hip and knee replacements.

PubMed

Burke, Neil G; Green, Connor; McHugh, Gavin; McGolderick, Niall; Kilcoyne, Carol; Kenny, Patrick

2012-08-01

It is important to reduce potential wound complications in total hip and total knee arthroplasty procedures. The purpose of this study was to compare the jubilee dressing method to a standard adhesive dressing. 124 patients (62 total hip replacements and 62 total knee replacements) were randomly selected to have either a standard adhesive dressing or jubilee method dressing. The number of dressing changes, incidence of blistering, leakage, appearance of inflammation, infection rate and the average stay in hospital was recorded for each patient. The jubilee dressing significantly reduced the rate of blistering, leakage and number of dressing changes when compare to a traditional adhesive dressing (p < 0.05). The rate of inflammation and average length of stay in hospital was not significantly different between the two groups. The authors recommend the use of this dressing for total hip and total knee arthroplasty procedures due to the associated lower complication rate. Copyright © 2012 Tissue Viability Society. Published by Elsevier Ltd. All rights reserved.

THE FIRST LUNAR MAP OF THE AVERAGE SOIL ATOMIC MASS

DOE Office of Scientific and Technical Information (OSTI.GOV)

O. GASNAULT; W. FELDMAN; ET AL

2001-01-01

Measurements of indexes of lunar surface composition were successfully made during Lunar Prospector (LP) mission, using the Neutron Spectrometers (NS) [1]. This capability is demonstrated for fast neutrons in Plates 1 of Maurice et al. [2] (similar to Figure 2 here). Inspection shows a clear distinction between mare basalt (bright) and highland terranes [2]. Fast neutron simulations demonstrate the sensitivity of the fast neutron leakage flux to the presence of iron and titanium in the soil [3]. The dependence of the flux to a third element (calcium or aluminum) was also suspected [4]. We expand our previous work in thismore » study by estimating fast neutron leakage fluxes for a more comprehensive set of assumed lunar compositions. We find a strong relationship between the fast neutron fluxes and the average soil atomic mass: . This relation can be inverted to provide a map of from the measured map of fast neutrons from the Moon.« less

1T1R Nonvolatile Memory with Al/TiO₂/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor.

PubMed

Lee, Ke-Jing; Chang, Yu-Chi; Lee, Cheng-Jung; Wang, Li-Wen; Wang, Yeong-Her

2017-12-09

A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 5 cm²/Vs, low threshold voltage of -1.1 V, and low leakage current of 10 -12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO₂-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.

Study of true-remanent polarization using remanent hysteresis task and resistive leakage analysis in ferroelectric 0.64Pb(Mg1/3Nb2/3)O3-0.36PbTiO3 ceramics

NASA Astrophysics Data System (ADS)

Joseph, Abhilash J.; Kumar, Binay

2018-03-01

The conventionally reported value of remanent polarization (Pr) contains contribution from non-remanent components which are not usable for memory device applications. This report presents techniques which extract the true-remanent (intrinsic) component of polarization after eliminating the non-remanent component in ferroelectric ceramics. For this, "remanent hysteresis task" and "positive-up-negative-down technique" were performed which utilized the switchable properties of polarizations to nullify the contributions from the non-remanent (non-switchable) components. The report also addresses the time-dependent leakage behavior of the ceramics focusing on the presence of resistive leakage (a time-dependent parameter) present in the ceramics. The techniques presented here are especially useful for polycrystalline ceramics where leakage current leads to an erroneous estimation of Pr.

Measuring resistivity changes from within a first cased well to monitor fluids injected into oil bearing geological formations from a second cased well while passing electrical current between the two cased wells

DOEpatents

Vail, III, William B.

1993-01-01

A.C. current is conducted through geological formations separating two cased wells in an oil field undergoing enhanced oil recovery operations such as water flooding operations. Methods and apparatus are disclosed to measure the current leakage conducted into a geological formation from within a first cased well that is responsive to fluids injected into formation from a second cased well during the enhanced oil production activities. The current leakage and apparent resistivity measured within the first cased well are responsive to fluids injected into formation from the second cased well provided the distance of separation between the two cased wells is less than, or on the order of, a Characteristic Length appropriate for the problem.

Carrier Transport of Silver Nanowire Contact to p-GaN and its Influence on Leakage Current of LEDs

NASA Astrophysics Data System (ADS)

Oh, Munsik; Kang, Jae-Wook; Kim, Hyunsoo

2018-03-01

The authors investigated the silver nanowires (AgNWs) contact formed on p-GaN. Transmission line model applied to the AgNWs contact to p-GaN produced near ohmic contact with a specific contact resistance (ρ sc) of 10-1˜10-4 Ω·cm2. Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature (I-V-T) measurement revealed a strong temperature dependence with respect to ρ sc, indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.

Measuring resistivity changes from within a first cased well to monitor fluids injected into oil bearing geological formations from a second cased well while passing electrical current between the two cased wells

DOEpatents

Vail, W.B. III.

1993-02-16

A.C. current is conducted through geological formations separating two cased wells in an oil field undergoing enhanced oil recovery operations such as water flooding operations. Methods and apparatus are disclosed to measure the current leakage conducted into a geological formation from within a first cased well that is responsive to fluids injected into formation from a second cased well during the enhanced oil production activities. The current leakage and apparent resistivity measured within the first cased well are responsive to fluids injected into formation from the second cased well provided the distance of separation between the two cased wells is less than, or on the order of, a Characteristic Length appropriate for the problem.

Random Telegraph Signal-Like Fluctuation Created by Fowler-Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor

NASA Astrophysics Data System (ADS)

Kim, Heesang; Oh, Byoungchan; Kim, Kyungdo; Cha, Seon-Yong; Jeong, Jae-Goan; Hong, Sung-Joo; Lee, Jong-Ho; Park, Byung-Gook; Shin, Hyungcheol

2010-09-01

We generated traps inside gate oxide in gate-drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler-Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time domain and in frequency domain. It was found that the trap inside gate oxide could generate random telegraph signal (RTS)-like fluctuation in GIDL current. The characteristics of that fluctuation were similar to those of RTS-like fluctuation in GIDL current observed in the non-stressed device. This result shows the possibility that the trap causing variable retention time (VRT) in DRAM data retention time can be located inside gate oxide like channel RTS of metal-oxide-semiconductor field-effect transistors (MOSFETs).

Relating Agulhas Leakage to the Agulhas Current Retroflection Location

DTIC Science & Technology

2009-11-03

branch return flow of the Atlantic meridional overturning circulation (Gordon, 1986; Weijer et al., 1999; Peeters et al., 2004; Biastoch et al., 2008a...demonstrated that the mesoscale dynamics reflected in the decadal variability of the Atlantic meridional overturning circulation (Biastoch et al...Lutjeharms, J. R. E.: Agulhas leakage dynamics affects decadal variability in Atlantic overturn - ing circulation , Nature, 456, 489–492, 2008a. Biastoch, A

Design and fabrication of piezoresistive p-SOI Wheatstone bridges for high-temperature applications

NASA Astrophysics Data System (ADS)

Kähler, Julian; Döring, Lutz; Merzsch, Stephan; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2011-06-01

For future measurements while depth drilling, commercial sensors are required for a temperature range from -40 up to 300 °C. Conventional piezoresistive silicon sensors cannot be used at higher temperatures due to an exponential increase of leakage currents which results in a drop of the bridge voltage. A well-known procedure to expand the temperature range of silicon sensors and to reduce leakage currents is to employ Silicon-On-Insulator (SOI) instead of standard wafer material. Diffused resistors can be operated up to 200 °C, but show the same problems beyond due to leakage of the p-njunction. Our approach is to use p-SOI where resistors as well as interconnects are defined by etching down to the oxide layer. Leakage is suppressed and the temperature dependence of the bridges is very low (TCR = (2.6 +/- 0.1) μV/K@1 mA up to 400 °C). The design and process flow will be presented in detail. The characteristics of Wheatstone bridges made of silicon, n- SOI, and p-SOI will be shown for temperatures up to 300 °C. Besides, thermal FEM-simulations will be described revealing the effect of stress between silicon and the silicon-oxide layer during temperature cycling.

TA [2] Continuous, regional methane emissions estimates in northern Pennsylvania gas fields using atmospheric inversions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lauvaux, Thomas

Natural Gas (NG) production activities in the northeastern Marcellus shale have significantly increased in the last decade, possibly releasing large amounts of methane (CH 4) into the atmosphere from the operations at the productions sites and during the processing and transmission steps of the natural gas chain. Based on an intensive aircraft survey, leakage rates from the NG production were quantified in May 2015 and found to be in the order of 0.5% of the total production, higher than reported by the Environmental Protection Agency (EPA) but below the usually observed leakage rates over the shale gases in the US.more » Thanks to the high production rates on average at each well, leakage rates normalized by production appeared to be low in the northeastern Marcellus shale. This result confirms that natural gas production using unconventional techniques in this region is emitting relatively less CH 4 into the atmosphere than other shale reservoirs. The low emissions rate can be explained in part by the high productivity of wells drilled across the northeastern Marcellus region. We demonstrated here that atmospheric monitoring techniques can provide an independent quantification of NG leakage rates using aircraft measurements. The CH 4 analyzers were successfully calibrated at four sites across the region, measuring continuously the atmospheric CH 4 mixing ratios and isotopic 13Ch 4. Our preliminary findings confirm the low leakage rates from tower data collected over September 2015 to November 2016 compared to the aircraft mass-balance estimates in may 2015. However, several episodes revealing large releases of natural gas over several weeks showed that temporal variations in the emissions of CH 4 may increase the actual leakage rate over longer time periods.« less

Fabrication and characterization of tensile In0.3Al0.7As barrier and compressive In0.7Ga0.3As channel pHEMTs having extremely low gate leakage for low-noise applications

NASA Astrophysics Data System (ADS)

Packeer, F.; Mohamad Isa, M.; Mat Jubadi, W.; Ian, K. W.; Missous, M.

2013-07-01

This study focuses on the area of the epitaxial design, fabrication and characterization of a 1 µm gate-length InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs-InAlAs material systems. The advanced epitaxial layer design incorporates a highly strained aluminum-rich Schottky contact barrier, an indium-rich channel and a double delta-doped structure, which significantly improves upon the conventional low-noise pHEMT which suffers from high gate current leakage and low breakdown voltage. The outstanding achievements of the new design approach are 99% less gate current leakage and a 73% increase in breakdown voltage, compared with the conventional design. Furthermore, no degradation in RF performance is observed in terms of the cut-off frequency in this new highly tensile strained design. The remarkable performance of this advanced pHEMT design facilitates the implementation of outstanding low-noise devices.

In Vitro Evaluation of Leakage at Implant-Abutment Connection of Three Implant Systems Having the Same Prosthetic Interface Using Rhodamine B

PubMed Central

Tehini, Georges; Rifai, Khaldoun; Bou Nasser Eddine, Farah; El Zein, Nabil; Badran, Bassam

2014-01-01

Objectives. Hollow space between implant and abutment may act as reservoir for commensal and/or pathogenic bacteria representing a potential source of tissue inflammation. Microbial colonization of the interfacial gap may ultimately lead to infection and bone resorption. Using Rhodamine B, a sensitive fluorescent tracer dye, we aim in this study to investigate leakage at implant-abutment connection of three implant systems having the same prosthetic interface. Materials and Methods. Twenty-one implants (seven Astra Tech, seven Euroteknika, and seven Dentium) with the same prosthetic interface were connected to their original abutments, according to the manufacturers' recommendation. After determination of the inner volume of each implant systems, the kinetic quantification of leakage was evaluated for each group using Rhodamine B (10−2 M). For each group, spectrophotometric analysis was performed to detect leakage with a fluorescence spectrophotometer at 1 h (T0) and 48 h (T1) of incubation time at room temperature. Results. Astra Tech had the highest inner volume (6.8 μL), compared to Dentium (4 μL) and Euroteknika (2.9 μL). At T0 and T1, respectively, the leakage volume and percentage of each system were as follows: Astra Tech 0.043 μL or 1.48% (SD 0.0022), 0.08 μL or 5.56% (SD 0.0074), Euroteknika 0.09 μL or 6.93% (SD 0.0913), 0.21 μL or 20.55% (SD 0.0035), and Dentium 0.07 μL or 4.6% (SD 0.0029), 0.12 μL or 10.47% (SD 0.0072). Conclusion. The tested internal conical implant-abutment connections appear to be unable to prevent leakage. In average, Astra Tech implants showed the highest inner volume and the least leakage. PMID:24899896

40 CFR 86.1866-12 - CO2 fleet average credit programs.

Code of Federal Regulations, 2012 CFR

2012-07-01

... technologies designed to reduce air conditioning refrigerant leakage over the useful life of their passenger....1865-12 by implementing specific air conditioning system technologies designed to reduce air... performance improvement for the system of greater than 10% when compared to previous industry standard designs...

Transferred wrinkled Al2O3 for highly stretchable and transparent graphene-carbon nanotube transistors

NASA Astrophysics Data System (ADS)

Chae, Sang Hoon; Yu, Woo Jong; Bae, Jung Jun; Duong, Dinh Loc; Perello, David; Jeong, Hye Yun; Ta, Quang Huy; Ly, Thuc Hue; Vu, Quoc An; Yun, Minhee; Duan, Xiangfeng; Lee, Young Hee

2013-05-01

Despite recent progress in producing transparent and bendable thin-film transistors using graphene and carbon nanotubes, the development of stretchable devices remains limited either by fragile inorganic oxides or polymer dielectrics with high leakage current. Here we report the fabrication of highly stretchable and transparent field-effect transistors combining graphene/single-walled carbon nanotube (SWCNT) electrodes and a SWCNT-network channel with a geometrically wrinkled inorganic dielectric layer. The wrinkled Al2O3 layer contained effective built-in air gaps with a small gate leakage current of 10-13 A. The resulting devices exhibited an excellent on/off ratio of ~105, a high mobility of ~40 cm2 V-1 s-1 and a low operating voltage of less than 1 V. Importantly, because of the wrinkled dielectric layer, the transistors retained performance under strains as high as 20% without appreciable leakage current increases or physical degradation. No significant performance loss was observed after stretching and releasing the devices for over 1,000 times. The sustainability and performance advances demonstrated here are promising for the adoption of stretchable electronics in a wide variety of future applications.

Electrical safety Q&A. A reference guide for the clinical engineer.

PubMed

2005-02-01

This guide, which ECRI developed to answer the electrical safety questions most frequently asked by member hospitals, features practical advice for addressing electrical safety concerns in the healthcare environment. Questions addressed include: STANDARDS AND APPROVALS: What electrical safety standards apply? How do NFPA 99 and IEC 60601-1 differ? What organizations approve medical devices? LEAKAGE CURRENT LIMITS AND TESTING: How are leakage current limits established? What limits apply to equipment used in the hospital? And how should the limits be applied in special cases, such as the use of PCs in the patient care area or equipment used in the clinical laboratory? ISOLATED POWER: What are its advantages and disadvantages, and is isolated power needed in the operating room? Other topics addressed include double insulation, ground-fault circuit interrupters (GFCIs), and requirements for medical devices used in the home. Supplementary articles discuss acceptable alternatives to UL listing, the use of Hospital Grade plugs, the limitations of leakage current testing of devices connected to isolated power systems, and the debate about whether to designate ORs as wet locations. Experienced clinical engineers should find this guide to be a handy reference, while those new to the field should find it to be a helpful educational resource.

Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film

NASA Astrophysics Data System (ADS)

Wu, Chi-Chang; Hsiao, Yu-Ping; You, Hsin-Chiang; Lin, Guan-Wei; Kao, Min-Fang; Manga, Yankuba B.; Yang, Wen-Luh

2018-02-01

We have developed an organic-based resistive random access memory (ReRAM) by using spin-coated polyimide (PI) as the resistive layer. In this study, the chain distance and number of chain stacks of PI molecules are investigated. We employed different solid contents of polyamic acid (PAA) to synthesize various PI films, which served as the resistive layer of ReRAM, the electrical performance of which was evaluated. By tuning the PAA solid content, the intermolecular interaction energy of the PI films is changed without altering the molecular structure. Our results show that the leakage current in the high-resistance state and the memory window of the PI-based ReRAM can be substantially improved using this technique. The superior properties of the PI-based ReRAM are ascribed to fewer molecular chain stacks in the PI films when the PAA solid content is decreased, hence suppressing the leakage current. In addition, a device retention time of more than 107 s can be achieved using this technique. Finally, the conduction mechanism in the PI-based ReRAM was analyzed using hopping and conduction models.

Threshold-voltage modulated phase change heterojunction for application of high density memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Baihan; Tong, Hao, E-mail: tonghao@hust.edu.cn; Qian, Hang

2015-09-28

Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-raymore » photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current.« less

Design and characterization of GaN p-i-n diodes for betavoltaic devices

NASA Astrophysics Data System (ADS)

Khan, Muhammad R.; Smith, Joshua R.; Tompkins, Randy P.; Kelley, Stephen; Litz, Marc; Russo, John; Leathersich, Jeff; Shahedipour-Sandvik, Fatemeh (Shadi); Jones, Kenneth A.; Iliadis, Agis

2017-10-01

The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm2 and a reverse leakage current of -0.14 mA/cm2 at -10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6 keV average) to 63Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to 3H and 63Ni beta sources respectively.

Surface Conduction in III-V Semiconductor Infrared Detector Materials

NASA Astrophysics Data System (ADS)

Sidor, Daniel Evan

III-V semiconductors are increasingly used to produce high performance infrared photodetectors; however a significant challenge inherent to working with these materials is presented by unintended electrical conduction pathways that form along their surfaces. Resulting leakage currents contribute to system noise and are ineffectively mitigated by device cooling, and therefore limit ultimate performance. When the mechanism of surface conduction is understood, the unipolar barrier device architecture offers a potential solution. III-V bulk unipolar barrier detectors that effectively suppress surface leakage have approached the performance of the best II-VI pn-based structures. This thesis begins with a review of empirically determined Schottky barrier heights and uses this information to present a simple model of semiconductor surface conductivity. The model is validated through measurements of degenerate n-type surface conductivity on InAs pn junctions, and non-degenerate surface conductivity on GaSb pn junctions. It is then extended, along with design principles inspired by the InAs-based nBn detector, to create a flat-band pn-based unipolar barrier detector possessing a conductive surface but free of detrimental surface leakage current. Consideration is then given to the relative success of these and related bulk detectors in suppressing surface leakage when compared to analogous superlattice-based designs, and general limitations of unipolar barriers in suppressing surface leakage are proposed. Finally, refinements to the molecular beam epitaxy crystal growth techniques used to produce InAs-based unipolar barrier heterostructure devices are discussed. Improvements leading to III-V device performance well within an order of magnitude of the state-of-the-art are demonstrated.

Geochemical monitoring for detection of CO_{2} leakage from subsea storage sites

NASA Astrophysics Data System (ADS)

García-Ibáñez, Maribel I.; Omar, Abdirahman M.; Johannessen, Truls

2017-04-01

Carbon Capture and Storage (CCS) in subsea geological formations is a promising large-scale technology for mitigating the increases of carbon dioxide (CO2) in the atmosphere. However, detection and quantification of potential leakage of the stored CO2 remains as one of the main challenges of this technology. Geochemical monitoring of the water column is specially demanding because the leakage CO2 once in the seawater may be rapidly dispersed by dissolution, dilution and currents. In situ sensors capture CO2 leakage signal if they are deployed very close to the leakage point. For regions with vigorous mixing and/or deep water column, and for areas far away from the leakage point, a highly sensitive carbon tracer (Cseep tracer) was developed based on the back-calculation techniques used to estimate anthropogenic CO2 in the water column. Originally, the Cseep tracer was computed using accurate discrete measurements of total dissolved inorganic carbon (DIC) and total alkalinity (AT) in the Norwegian Sea to isolate the effect of natural submarine vents in the water column. In this work we assess the effect of measurement variables on the performance of the method by computing the Cseep tracer twice: first using DIC and AT, and second using partial pressure of CO2 (pCO2) and pH. The assessment was performed through the calculation of the signal to noise ratios (STNR). We found that the use of the Cseep tracer increases the STNR ten times compared to the raw measurement data, regardless of the variables used. Thus, while traditionally the pH-pCO2 pair generates the greatest uncertainties in the oceanic CO2 system, it seems that the Cseep technique is insensitive to that issue. On the contrary, the use of the pCO2-pH pair has the highest CO2 leakage detection and localization potential due to the fact that both pCO2 and pH can currently be measured at high frequency and in an autonomous mode.

Durable Airtightness in Single-Family Dwellings - Field Measurementsand Analysis

DOE PAGES

Chan, Wanyu R.; Walker, Iain S.; Sherman, Max H.

2015-06-01

Here, durability of the building envelope is important to new homes that are increasingly built with improved levels of airtightness. It is also important to weatherized homes such that energy savings from retrofit measures, such as air sealing, are persistent. This paper presents a comparison of air leakage measurements collected in November 2013 through March 2014, with two sets of prior data collected between 2001-2003 from 17 new homes located near Atlanta, GA, and 17 homes near Boise, ID that were weatherized in 2007- 2008. The purpose of the comparison is to determine if there are changes to the airtightnessmore » of building envelopes over time. The air leakage increased in all but one of the new homes, with a mean increase of about 25%. The weatherized homes also showed an increase in the mean air leakage (12%). A regression analysis was performed to describe the relationship between prior and current measurements in terms of normalized leakage (NL). The best estimate of the ageing factor predicts a 15% increase in NL over ten years. Further analysis using ResDB data (LBNL’s Residential Diagnostic Database) showed the expected changes in air leakage if ageing were modelled. These results imply the need to examine the causes of increased leakage and methods to avoid them. This increase in leakage with time should be accounted for in long-term population-wide energy savings estimates, such as those used in ratings or energy savings programs.« less

Wide bandwidth transimpedance amplifier for extremely high sensitivity continuous measurements.

PubMed

Ferrari, Giorgio; Sampietro, Marco

2007-09-01

This article presents a wide bandwidth transimpedance amplifier based on the series of an integrator and a differentiator stage, having an additional feedback loop to discharge the standing current from the device under test (DUT) to ensure an unlimited measuring time opportunity when compared to switched discharge configurations while maintaining a large signal amplification over the full bandwidth. The amplifier shows a flat response from 0.6 Hz to 1.4 MHz, the capability to operate with leakage currents from the DUT as high as tens of nanoamperes, and rail-to-rail dynamic range for sinusoidal current signals independent of the DUT leakage current. Also available is a monitor output of the stationary current to track experimental slow drifts. The circuit is ideal for noise spectral and impedance measurements of nanodevices and biomolecules when in the presence of a physiological medium and in all cases where high sensitivity current measurements are requested such as in scanning probe microscopy systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. A., E-mail: dmitriy90@list.ru; Shashkin, I. S.; Bakhvalov, K. V.

Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswavemore » output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).« less

Fabrication of self-aligned, nanoscale, complex oxide varactors

NASA Astrophysics Data System (ADS)

Fu, Richard X.; Toonen, Ryan C.; Hirsch, Samuel G.; Ivill, Mathew P.; Cole, Melanie W.; Strawhecker, Kenneth E.

2015-01-01

Applications in ferroelectric random access memory and superparaelectric devices require the fabrication of ferroelectric capacitors at the nanoscale that exhibit extremely small leakage currents. To systematically study the material-size dependence of ferroelectric varactor performance, arrays of parallel-plate structures have been fabricated with nanoscale dielectric diameters. Electron beam lithography and inductively coupled plasma dry etching have been used to fabricate arrays of ferroelectric varactors using top electrodes as a self-aligned etch mask. Parallel-plate test structures using RF-sputtered Ba0.6Sr0.4TiO3 thin-films were used to optimize the fabrication process. Varactors with diameters down to 20 nm were successfully fabricated. Current-voltage (I-V) characteristics were measured to evaluate the significance of etch-damage and fabrication quality by ensuring low leakage currents through the structures.

Development of environmental impact monitoring protocol for offshore carbon capture and storage (CCS): A biological perspective

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Hyewon, E-mail: hyewon@ldeo.columbia.edu; Kim, Yong Hoon, E-mail: Yong.Kim@rpsgroup.com; Kang, Seong-Gil, E-mail: kangsg@kriso.re.kr

Offshore geologic storage of carbon dioxide (CO{sub 2}), known as offshore carbon capture and sequestration (CCS), has been under active investigation as a safe, effective mitigation option for reducing CO{sub 2} levels from anthropogenic fossil fuel burning and climate change. Along with increasing trends in implementation plans and related logistics on offshore CCS, thorough risk assessment (i.e. environmental impact monitoring) needs to be conducted to evaluate potential risks, such as CO{sub 2} gas leakage at injection sites. Gas leaks from offshore CCS may affect the physiology of marine organisms and disrupt certain ecosystem functions, thereby posing an environmental risk. Here,more » we synthesize current knowledge on environmental impact monitoring of offshore CCS with an emphasis on biological aspects and provide suggestions for better practice. Based on our critical review of preexisting literatures, this paper: 1) discusses key variables sensitive to or indicative of gas leakage by summarizing physico-chemical and ecological variables measured from previous monitoring cruises on offshore CCS; 2) lists ecosystem and organism responses to a similar environmental condition to CO{sub 2} leakage and associated impacts, such as ocean acidification and hypercapnia, to predict how they serve as responsive indicators of short- and long-term gas exposure, and 3) discusses the designs of the artificial gas release experiments in fields and the best model simulation to produce realistic leakage scenarios in marine ecosystems. Based on our analysis, we suggest that proper incorporation of biological aspects will provide successful and robust long-term monitoring strategies with earlier detection of gas leakage, thus reducing the risks associated with offshore CCS. - Highlights: • This paper synthesizes the current knowledge on environmental impact monitoring of offshore Carbon Capture and Sequestration (CCS). • Impacts of CO{sub 2} leakage (ocean acidification, hypercapnia) on marine organisms and ecosystems are discussed. • Insights and recommendations on EIA monitoring for CCS operations are proposed specifically in marine ecosystem perspective.« less

Principles of a multistack electrochemical wastewater treatment design

NASA Astrophysics Data System (ADS)

Elsahwi, Essam S.; Dawson, Francis P.; Ruda, Harry E.

2018-02-01

Electrolyzer stacks in a bipolar architecture (cells connected in series) are desirable since power provided to a stack can be transferred at high voltages and low currents and thus the losses in the power bus can be reduced. The anode electrodes (active electrodes) considered as part of this study are single sided but there are manufacturing cost advantages to implementing double side anodes in the future. One of the main concerns with a bipolar stack implementation is the existence of leakage currents (bypass currents). The leakage current is associated with current paths that are not between adjacent anode and cathode pairs. This leads to non uniform current density distributions which compromise the electrochemical conversion efficiency of the stack and can also lead to unwanted side reactions. The objective of this paper is to develop modelling tools for a bipolar architecture consisting of two single sided cells that use single sided anodes. It is assumed that chemical reactions are single electron transfer rate limited and that diffusion and convection effects can be ignored. The design process consists of the flowing two steps: development of a large signal model for the stack, and then the extraction of a small signal model from the large signal model. The small signal model facilitates the design of a controller that satisfies current or voltage regulation requirements. A model has been developed for a single cell and two cells in series but can be generalized to more than two cells in series and to incorporate double sided anode configurations in the future. The developed model is able to determine the leakage current and thus provide a quantitative assessment on the performance of the cell.

Experimental investigation of localized stress-induced leakage current distribution in gate dielectrics using array test circuit

NASA Astrophysics Data System (ADS)

Park, Hyeonwoo; Teramoto, Akinobu; Kuroda, Rihito; Suwa, Tomoyuki; Sugawa, Shigetoshi

2018-04-01

Localized stress-induced leakage current (SILC) has become a major problem in the reliability of flash memories. To reduce it, clarifying the SILC mechanism is important, and statistical measurement and analysis have to be carried out. In this study, we applied an array test circuit that can measure the SILC distribution of more than 80,000 nMOSFETs with various gate areas at a high speed (within 80 s) and a high accuracy (on the 10-17 A current order). The results clarified that the distributions of localized SILC in different gate areas follow a universal distribution assuming the same SILC defect density distribution per unit area, and the current of localized SILC defects does not scale down with the gate area. Moreover, the distribution of SILC defect density and its dependence on the oxide field for measurement (E OX-Measure) were experimentally determined for fabricated devices.

Simulated Effects of Ground-Water Augmentation on the Hydrology of Round and Halfmoon Lakes in Northwestern Hillsborough County, Florida

USGS Publications Warehouse

Yager, Richard M.; Metz, P.A.

2004-01-01

Pumpage from the Upper Floridan aquifer in northwest Hillsborough County near Tampa, Florida, has induced downward leakage from the overlying surficial aquifer and lowered the water table in many areas. Leakage is highest where the confining layer separating the aquifers is breached, which is common beneath many of the lakes in the study area. Leakage of water to the Upper Floridan aquifer has lowered the water level in many lakes and drained many wetlands. Ground water from the Upper Floridan aquifer has been added (augmented) to some lakes in an effort to maintain lake levels, but the resulting lake-water chemistry and lake leakage patterns are substantially different from those of natural lakes. Changes in lake-water chemistry can cause changes in lake flora, fauna, and lake sediment composition, and large volumes of lake leakage are suspected to enhance the formation of sinkholes near the shoreline of augmented lakes. The leakage rate of lake water through the surficial aquifer to the Upper Floridan aquifer was estimated in this study using ground-water-flow models developed for an augmented lake (Round Lake) and non-augmented lake (Halfmoon Lake). Flow models developed with MODFLOW were calibrated through nonlinear regression with UCODE to measured water levels and monthly net ground-water-flow rates from the lakes estimated from lake-water budgets. Monthly estimates of ground-water recharge were computed using an unsaturated flow model (LEACHM) that simulated daily changes in storage of water in the soil profile, thus estimating recharge as drainage to the water table. Aquifer properties in the Round Lake model were estimated through transient-state simulations using two sets of monthly recharge rates computed during July 1996 to February 1999, which spanned both average conditions (July 1996 through October 1997), and an El Ni?o event (November 1997 through September 1998) when the recharge rate doubled. Aquifer properties in the Halfmoon Lake model were estimated through steady-state simulations of average conditions in July 1996. Simulated hydrographs computed by the Round and Halfmoon Lake models closely matched measured water-level fluctuations, except during El Ni?o, when the Halfmoon Lake model was unable to accurately reproduce water levels. Possibly, potential recharge during El Ni?o was diverted through ground-water-flow outlets that were not represented in the Halfmoon Lake model, or a large part of the rainfall was diverted into runoff before it could become recharge. Solute transport simulations with MT3D indicate that leakage of lake water extended 250 to 400 feet into the surficial aquifer around Round Lake, and from 75 to 150 feet around Halfmoon Lake before flowing to the underlying Upper Floridan aquifer. These results are in agreement with concentrations of stable isotopes of oxygen-18 (d18O) and deuterium (dD) in the surficial aquifer. Schedules of monthly augmentation rates to maintain constant stages in Round and Halfmoon Lakes were computed using an equation that accounted for changes in the Upper Floridan aquifer head and the deviation from the mean recharge rate. Resulting lake stages were nearly constant during the first half of the study, but increased above target lake stages during El Ni?o; modifying the computation of augmentation rates to account for the higher recharge rate during El Ni?o resulted in lake stages that were closer to the target lake stage. Substantially more lake leakage flows to the Upper Floridan aquifer from Round Lake than from Halfmoon Lake, because the estimated vertical hydraulic conductivities of lake and confining layer sediments and breaches in the confining layer beneath Round Lake are much greater. Augmentation rates required to maintain the low guidance stages in Round Lake (53 feet) and Halfmoon Lake (42 feet) under average Upper Floridan aquifer heads are estimated as 33,850 cubic feet per day and 1,330 to 10,000 cubic feet per day, respectively. T

Detection of urinary leakage after radical retropubic prostatectomy by contrast enhanced ultrasound - do we still need conventional retrograde cystography?

PubMed

Schoeppler, Gita M; Buchner, Alexander; Zaak, Dirk; Khoder, Wael; Staehler, Michael; Stief, Christian G; Reiser, Maximilian F; Clevert, Dirk-Andre

2010-12-01

To prospectively evaluate the accuracy of transvesical contrast-enhanced ultrasound (CEUS) as an alternative method for the detection of anastomotic leakage after radical retropubic prostatectomy (RRP) in comparison with the current standard method of conventional retrograde cystography (CG). Forty-three patients underwent RRP for histologically proven localized prostate cancer. The vesico-urethral anastomosis was evaluated 8 days after RRP by CG and CEUS. Any peri-anastomotic leakage was assessed and determined in CG and CEUS as follows: no extravasation (EV), small leakage (≤0.5 cm), moderate leakage (>0.5 cm to ≤2 cm), large leakage (>2 cm diameter of EV seen). In total, 21 (49%) patients showed a watertight anastomosis. Ten (23%), two (4.7%) and ten (23%) patients showed a small, intermediate and large EV, respectively. In 31 cases (72%) there was 100% agreement of CG and CEUS for detection of no, moderate and large EV, respectively. In nine cases a small and in two cases a moderate EV was categorized as watertight anastomosis by CEUS. Only in one case did CG detect a small EV where a large EV was detected in CEUS. The agreement between both methods was 95% for detecting absence or large leakages. CEUS is a promising imaging modality that seems to be equivalent to CG for detecting the presence of a large anastomotic leakage that is clinically relevant for postoperative persistence of the indwelling catheter. CEUS could be a cheap and time-saving alternative to the CG without exposure of the patient to radiation. © 2010 THE AUTHORS. JOURNAL COMPILATION © 2010 BJU INTERNATIONAL.

Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device

NASA Astrophysics Data System (ADS)

Katase, Takayoshi; Suzuki, Yuki; Ohta, Hiromichi

2017-10-01

The electrochemical switching of SrCoOx-based non-volatile memory with a thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivities (σ) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO.7Al2O3 film with a nanoporous structure (Calcium Aluminate with Nanopore), but the electrochemical oxidation/reduction of the SrCoOx layer required the application of a high gate voltage (Vg) up to 20 V for a very long current-flowing-time (t) ˜40 min, primarily due to the low σ [2.0 × 10-8 S cm-1 at room temperature (RT)] of leakage-free water. We then controlled the σ of the leakage-free electrolyte, infiltrated in the a-NaxTaO3 film with a nanopillar array structure, from 8.0 × 10-8 S cm-1 to 2.5 × 10-6 S cm-1 at RT by changing the x = 0.01-1.0. As the result, the t, required for the metallization of the SrCoOx layer under small Vg = -3 V, becomes two orders of magnitude shorter with increase of the σ of the a-NaxTaO3 leakage-free electrolyte. These results indicate that the ion migration in the leakage-free electrolyte is the rate-determining step for the electrochemical switching, compared to the other electrochemical process, and the high σ of the leakage-free electrolyte is the key factor for the development of the non-volatile SrCoOx-based electro-magnetic phase switching device.

Numerical Modeling of Methane Leakage from a Faulty Natural Gas Well into Fractured Tight Formations.

PubMed

Moortgat, Joachim; Schwartz, Franklin W; Darrah, Thomas H

2018-03-01

Horizontal drilling and hydraulic fracturing have enabled hydrocarbon recovery from unconventional reservoirs, but led to natural gas contamination of shallow groundwaters. We describe and apply numerical models of gas-phase migration associated with leaking natural gas wells. Three leakage scenarios are simulated: (1) high-pressure natural gas pulse released into a fractured aquifer; (2) continuous slow leakage into a tilted fractured formation; and (3) continuous slow leakage into an unfractured aquifer with fluvial channels, to facilitate a generalized evaluation of natural gas transport from faulty natural gas wells. High-pressure pulses of gas leakage into sparsely fractured media are needed to produce the extensive and rapid lateral spreading of free gas previously observed in field studies. Transport in fractures explains how methane can travel vastly different distances and directions laterally away from a leaking well, which leads to variable levels of methane contamination in nearby groundwater wells. Lower rates of methane leakage (≤1 Mcf/day) produce shorter length scales of gas transport than determined by the high-pressure scenario or field studies, unless aquifers have low vertical permeabilities (≤1 millidarcy) and fractures and bedding planes have sufficient tilt (∼10°) to allow a lateral buoyancy component. Similarly, in fractured rock aquifers or where permeability is controlled by channelized fluvial deposits, lateral flow is not sufficiently developed to explain fast-developing gas contamination (0-3 months) or large length scales (∼1 km) documented in field studies. Thus, current efforts to evaluate the frequency, mechanism, and impacts of natural gas leakage from faulty natural gas wells likely underestimate contributions from small-volume, low-pressure leakage events. © 2018, National Ground Water Association.

Groundwater-Quality Impacts from Natural-Gas Wellbore Leakage: Numerical Sensitivity Analysis of Hydrogeologic, Geostatistical, and Source-Term Parameterization at Varying Depths

NASA Astrophysics Data System (ADS)

Rice, A. K.; McCray, J. E.; Singha, K.

2016-12-01

The development of directional drilling and stimulation of reservoirs by hydraulic fracturing has transformed the energy landscape in the U.S. by making recovery of hydrocarbons from shale formations not only possible but economically viable. Activities associated with hydraulic fracturing present a set of water-quality challenges, including the potential for impaired groundwater quality. In this project, we use a three-dimensional, multiphase, multicomponent numerical model to investigate hydrogeologic conditions that could lead to groundwater contamination from natural gas wellbore leakage. This work explores the fate of methane that enters a well annulus, possibly from an intermediate formation or from the production zone via a flawed cement seal, and leaves the annulus at one of two depths: at the elevation of groundwater or below a freshwater aquifer. The latter leakage scenario is largely ignored in the current scientific literature, where focus has been on leakage directly into freshwater aquifers, despite modern regulations requiring steel casings and cement sheaths at these depths. We perform a three-stage sensitivity analysis, examining (1) hydrogeologic parameters of media surrounding a methane leakage source zone, (2) geostatistical variations in intrinsic permeability, and (3) methane source zone pressurization. Results indicate that in all cases methane reaches groundwater within the first year of leakage. To our knowledge, this is the first study to consider natural gas wellbore leakage in the context of multiphase flow through heterogeneous permeable media; advantages of multiphase modeling include more realistic analysis of methane vapor-phase relative permeability as compared to single-phase models. These results can be used to inform assessment of aquifer vulnerability to hydrocarbon wellbore leakage at varying depths.

The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Sheremet, V.; Genç, M.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2017-11-01

The effect of a transparent ITO current spreading layer on electrical and light output properties of blue InGaN/GaN light emitting diodes (LEDs) is discussed. When finite conductivity of ITO is taken into account, unlike in previous models, the topology of LED die and contacts are shown to significantly affect current spreading and light output characteristics in top emitting devices. We propose an approach for calculating the current transfer length describing current spreading. We show that an inter-digitated electrode configuration with distance between the contact pad and the edge of p-n junction equal to transfer length in the current spreading ITO layer allows one to increase the optical area of LED chip, as compared to the physical area of the die, light output power, and therefore, the LED efficiency for a given current density. A detailed study of unpassivated LEDs also shows that current transfer lengths longer than the distance between the contact pad and the edge of p-n junction leads to increasing surface leakage that can only be remedied with proper passivation.

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

NASA Astrophysics Data System (ADS)

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena

2016-03-01

Many passivation dielectrics are pursued for suppressing current collapse due to trapping/detrapping of access-region surface traps in AlGaN/GaN based metal oxide semiconductor heterojuction field effect transistors (MOS-HFETs). The suppression of current collapse can potentially be achieved either by reducing the interaction of surface traps with the gate via surface leakage current reduction, or by eliminating surface traps that can interact with the gate. But, the latter is undesirable since a high density of surface donor traps is required to sustain a high 2D electron gas density at the AlGaN/GaN heterointerface and provide a low ON-resistance. This presents a practical trade-off wherein a passivation dielectric with the optimal surface trap characteristics and minimal surface leakage is to be chosen. In this work, we compare MOS-HFETs fabricated with popular ALD gate/passivation dielectrics like SiO2, Al2O3, HfO2 and HfAlO along with an additional thick plasma-enhanced chemical vapor deposition SiO2 passivation. It is found that after annealing in N2 at 700 °C, the stack containing ALD HfAlO provides a combination of low surface leakage and a high density of shallow donor traps. Physics-based TCAD simulations confirm that this combination of properties helps quick de-trapping and minimal current collapse along with a low ON resistance.

[Bile leakage after liver resection: A retrospective cohort study].

PubMed

Menclová, K; Bělina, F; Pudil, J; Langer, D; Ryska, M

2015-12-01

Many previous reports have focused on bile leakage after liver resection. Despite the improvements in surgical techniques and perioperative care the incidence of this complication rather keeps increasing. A number of predictive factors have been analyzed. There is still no consensus regarding their influence on the formation of bile leakage. The objective of our analysis was to evaluate the incidence of bile leakage, its impact on mortality and duration of hospitalization at our department. At the same time, we conducted an analysis of known predictive factors. The authors present a retrospective review of the set of 146 patients who underwent liver resection at the Department of Surgery of the 2nd Faculty of Medicine of the Charles University and Central Military Hospital Prague, performed between 20102013. We used the current ISGLS (International Study Group of Liver Surgery) classification to evaluate the bile leakage. The severity of this complication was determined according to the Clavien-Dindo classification system. Statistical significance of the predictive factors was determined using Fishers exact test and Students t-test. The incidence of bile leakage was 21%. According to ISGLS classification the A, B, and C rates were 6.5%, 61.2%, and 32.3%, respectively. The severity of bile leakage according to the Clavien-Dindo classification system - I-II, IIIa, IIIb, IV and V rates were 19.3%, 42%, 9.7%, 9.7%, and 19.3%, respectively. We determined the following predictive factors as statistically significant: surgery for malignancy (p<0.001), major hepatic resection (p=0.001), operative time (p<0.001), high intraoperative blood loss (p=0.02), construction of HJA (p=0.005), portal venous embolization/two-stage surgery (p=0.009) and ASA score (p=0.02). Bile leakage significantly prolonged hospitalization time (p<0.001). In the group of patients with bile leakage the perioperative mortality was 23 times higher (p<0.001) than in the group with no leakage. Bile leakage is one of the most serious complications of liver surgery. Most of the risk factors are not easily controllable and there is no clear consensus on their influence. Intraoperative leak tests could probably reduce the incidence of bile leakage. In the future, further studies will be required to improve the perioperative management and techniques to prevent such serious complications. Multidisciplinary approach is essential in the treatment.

Multilayer Piezoelectric Stack Actuator Characterization

NASA Technical Reports Server (NTRS)

Sherrit, Stewart; Jones, Christopher M.; Aldrich, Jack B.; Blodget, Chad; Bao, Xioaqi; Badescu, Mircea; Bar-Cohen, Yoseph

2008-01-01

Future NASA missions are increasingly seeking to use actuators for precision positioning to accuracies of the order of fractions of a nanometer. For this purpose, multilayer piezoelectric stacks are being considered as actuators for driving these precision mechanisms. In this study, sets of commercial PZT stacks were tested in various AC and DC conditions at both nominal and extreme temperatures and voltages. AC signal testing included impedance, capacitance and dielectric loss factor of each actuator as a function of the small-signal driving sinusoidal frequency, and the ambient temperature. DC signal testing includes leakage current and displacement as a function of the applied DC voltage. The applied DC voltage was increased to over eight times the manufacturers' specifications to investigate the correlation between leakage current and breakdown voltage. Resonance characterization as a function of temperature was done over a temperature range of -180C to +200C which generally exceeded the manufacturers' specifications. In order to study the lifetime performance of these stacks, five actuators from one manufacturer were driven by a 60volt, 2 kHz sine-wave for ten billion cycles. The tests were performed using a Lab-View controlled automated data acquisition system that monitored the waveform of the stack electrical current and voltage. The measurements included the displacement, impedance, capacitance and leakage current and the analysis of the experimental results will be presented.

1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

PubMed Central

Lee, Ke-Jing; Chang, Yu-Chi; Lee, Cheng-Jung; Wang, Li-Wen; Wang, Yeong-Her

2017-01-01

A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 2.5 cm2/Vs, low threshold voltage of −2.8 V, and low leakage current of 10−12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO2-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications. PMID:29232828

Clinical Evaluation of a Prototype Underwear Designed to Detect Urine Leakage From Continence Pads.

PubMed

Long, Adele; Edwards, Julia; Worthington, Joanna; Cotterill, Nikki; Weir, Iain; Drake, Marcus J; van den Heuvel, Eleanor

2015-01-01

We evaluated the performance of prototype underwear designed to detect urine leakage from continence pads, their acceptability to users, and their effect on health-related quality of life and psychosocial factors. Prototype product evaluation. Participants were 81 women with an average age of 67 years (range, 32-98 years) recruited between October 2010 and February 2012 from outpatient clinics, general practice surgeries, community continence services, and through charities and networks. The TACT3 project developed and manufactured a prototype undergarment designed to alert the wearer to a pad leak before it reaches outer clothing or furniture. The study was conducted in 2 stages: a pilot/feasibility study to assess general performance and a larger study to measure performance, acceptability to users, health-related quality of life, and psychosocial impact. Participants were asked to wear the prototype underwear for a period of 2 weeks, keeping a daily diary of leakage events for the first 7 days. They also completed validated instruments measuring lower urinary tract symptoms, health-related quality of life, and psychosocial impact. On average, 86% of the time participants were alerted to pad leakage events. More than 90% thought the prototype underwear was "good" or "OK" and that it would or could give them more confidence. Mean scores for the International Consultation on Incontinence Questionnaire-Urinary Incontinence Short Form indicated no change in the level of symptoms reported before or after the intervention, and no significant changes in health-related quality of life status occurred, except improvement in for travel restrictions. Evaluation via the Psychosocial Impact of Assistive Devices Scale also indicated a positive impact. The prototype underwear evaluated in this study was effective and acceptable for 5 out of every 10 wearers. Findings also suggest that the prototype underwear is suitable for women of all ages, dress sizes, and continence severity.

Visual Inspection of Water Leakage from Ground Penetrating Radar Radargram

NASA Astrophysics Data System (ADS)

Halimshah, N. N.; Yusup, A.; Mat Amin, Z.; Ghazalli, M. D.

2015-10-01

Water loss in town and suburban is currently a significant issue which reflect the performance of water supply management in Malaysia. Consequently, water supply distribution system has to be maintained in order to prevent shortage of water supply in an area. Various techniques for detecting a mains water leaks are available but mostly are time-consuming, disruptive and expensive. In this paper, the potential of Ground Penetrating Radar (GPR) as a non-destructive method to correctly and efficiently detect mains water leaks has been examined. Several experiments were designed and conducted to prove that GPR can be used as tool for water leakage detection. These include instrument validation test and soil compaction test to clarify the maximum dry density (MDD) of soil and simulation studies on water leakage at a test bed consisting of PVC pipe burying in sand to a depth of 40 cm. Data from GPR detection are processed using the Reflex 2D software. Identification of water leakage was visually inspected from the anomalies in the radargram based on GPR reflection coefficients. The results have ascertained the capability and effectiveness of the GPR in detecting water leakage which could help avoiding difficulties with other leak detection methods.

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

NASA Astrophysics Data System (ADS)

Zheng, Meijuan; Zhang, Guozhen; Wang, Xiao; Wan, Jiaxian; Wu, Hao; Liu, Chang

2017-04-01

GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10-9 A/cm2 at 1 V was obtained when O3 was used for the growth of ZrO2. Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.

Cu2ZnSnSe4 Thin Film Solar Cell with Depth Gradient Composition Prepared by Selenization of Sputtered Novel Precursors.

PubMed

Lai, Fang-I; Yang, Jui-Fu; Chen, Wei-Chun; Kuo, Shou-Yi

2017-11-22

In this study, we proposed a new method for the synthesis of the target material used in a two stage process for preparation of a high quality CZTSe thin film. The target material consisting of a mixture of Cu x Se and Zn x Sn 1-x alloy was synthesized, providing a quality CZTSe precursor layer for highly efficient CZTSe thin film solar cells. The CZTSe thin film can be obtained by annealing the precursor layers through a 30 min selenization process under a selenium atmosphere at 550 °C. The CZTSe thin films prepared by using the new precursor thin film were investigated and characterized using X-ray diffraction, Raman scattering, and photoluminescence spectroscopy. It was found that diffusion of Sn occurred and formed the CTSe phase and Cu x Se phase in the resultant CZTSe thin film. By selective area electron diffraction transmission electron microscopy images, the crystallinity of the CZTSe thin film was verified to be single crystal. By secondary ion mass spectroscopy measurements, it was confirmed that a double-gradient band gap profile across the CZTSe absorber layer was successfully achieved. The CZTSe solar cell with the CZTSe absorber layer consisting of the precursor stack exhibited a high efficiency of 5.46%, high short circuit current (J SC ) of 37.47 mA/cm 2 , open circuit voltage (V OC ) of 0.31 V, and fill factor (F.F.) of 47%, at a device area of 0.28 cm 2 . No crossover of the light and dark current-voltage (I-V) curves of the CZTSe solar cell was observed, and also, no red kink was observed under red light illumination, indicating a low defect concentration in the CZTSe absorber layer. Shunt leakage current with a characteristic metal/CZTSe/metal leakage current model was observed by temperature-dependent I-V curves, which led to the discovery of metal incursion through the CdS buffer layer on the CZTSe absorber layer. This leakage current, also known as space charge-limited current, grew larger as the measurement temperature increased and completely overwhelmed the diode current at a measurement temperature of 200 °C. This is due to interlayer diffusion of metal that increases the shunt leakage current and decreases the efficiency of the CZTSe thin film solar cells.

TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance Density.

PubMed

Cheng, Chun-Hu; Hsu, Hsiao-Hsuan; Chou, Kun-i

2015-04-01

We report a low-temperature InP p-MOS with a high capacitance density of 2.7 µF/cm2, low leakage current of 0.77 A/cm2 at 1 V and tight current distribution. The high-density and low-leakage InP MOS was achieved by using high-κ TiLaO dielectric and ultra-thin SiO2 buffer layer with a thickness of less than 0.5 nm. The obtained EOT can be aggressively scaled down to < 1 nm through the use of stacked TiLaO/SiO2 dielectric, which has the potential for the future application of high mobility III-V CMOS devices.

INSTRUMENTATION AND TECHNIQUES. A SELF-CONTAINED, REGULATED, BURST-FIRING CONSTANT-CURRENT AC SHOCK GENERATOR

EPA Science Inventory

A line- and load-regulated constant-current ac shock generator has been designed for animal behavior experiments. The self-contained unit has four operating modes, amplitude adjustment, and a leakage current detection circuit. A unique feature of this generator is that the good l...

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

Experimental investigation of leak detection using mobile distributed monitoring system

NASA Astrophysics Data System (ADS)

Chen, Jiang; Zheng, Junli; Xiong, Feng; Ge, Qi; Yan, Qixiang; Cheng, Fei

2018-01-01

The leak detection of rockfill dams is currently hindered by spatial and temporal randomness and wide monitoring range. The spatial resolution of fiber Bragg grating (FBG) temperature sensing technology is related to the distance between measuring points. As a result, the number of measuring points should be increased to ensure that the precise location of the leak is detected. However, this leads to a higher monitoring cost. Consequently, it is difficult to promote and apply this technology to effectively monitor rockfill dam leakage. In this paper, a practical mobile distributed monitoring system with dual-tubes is used by combining the FBG sensing system and hydrothermal cycling system. This dual-tube structure is composed of an outer polyethylene of raised temperature resistance heating pipe, an inner polytetrafluoroethylene tube, and a FBG sensor string, among which, the FBG sensor string can be dragged freely in the internal tube to change the position of the measuring points and improve the spatial resolution. In order to test the effectiveness of the system, the large-scale model test of concentrated leakage in 13 working conditions is carried out by identifying the location, quantity, and leakage rate of leakage passage. Based on Newton’s law of cooling, the leakage state is identified using the seepage identification index ζ v that was confirmed according to the cooling curve. Results suggested that the monitoring system shows high sensitivity and can improve the spatial resolution with limited measuring points, and thus better locate the leakage area. In addition, the seepage identification index ζ v correlated well with the leakage rate qualitatively.

40 CFR 86.1866-12 - CO2 fleet average credit programs.

Code of Federal Regulations, 2010 CFR

2010-07-01

... technologies designed to reduce air conditioning refrigerant leakage over the useful life of their passenger... implementing specific air conditioning system technologies designed to reduce air conditioning-related CO2... than 10% when compared to previous industry standard designs): 1.1 g/mi. (viii) Oil separator: 0.6 g/mi...

40 CFR 86.1866-12 - CO2 fleet average credit programs.

Code of Federal Regulations, 2011 CFR

2011-07-01

... technologies designed to reduce air conditioning refrigerant leakage over the useful life of their passenger... implementing specific air conditioning system technologies designed to reduce air conditioning-related CO2... than 10% when compared to previous industry standard designs): 1.1 g/mi. (viii) Oil separator: 0.6 g/mi...

76 FR 64223 - Cardiovascular Devices; Reclassification of External Pacemaker Pulse Generator Devices

Federal Register 2010, 2011, 2012, 2013, 2014

2011-10-17

... arrhythmias; and 4. Micro/macro shocks--Uncontrolled leakage currents or patient auxiliary currents can cause...); Medtronic, Inc. v. Lohr, 518 U.S. 470 (1996); and Riegel v. Medtronic, Inc. 128 S. Ct. 999 (2008)). If this...

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE PAGES

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; ...

2017-08-01

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

Electric modulation of conduction in multiferroic Ni-doped GaFeO3 ceramics

NASA Astrophysics Data System (ADS)

Ghani, Awais; Yang, Sen; Rajput, S. S.; Ahmed, S.; Murtaza, Adil; Zhou, Chao; Yu, Zhonghai; Zhang, Yin; Song, Xiaoping; Ren, Xiaobing

2018-06-01

In this work, the effects of Ni substitution on the electrical leakage and multiferroic properties of GaFeO3 were examined. Structural analysis of grown ceramics using x-ray diffraction and Raman shows that all ceramics have pure phases with an orthorhombic structure and space group. Ni substitutions slightly modify lattice parameters and induce lattice distortion within the same crystalline structure. It is observed that with increasing Ni-content up to 0.10, the magnetic transition temperature () increases from 196 K to 407 K. Ni-doped samples showed better ferroelectric properties and a drastic reduction in leakage current (~three orders of magnitude) at room temperature. Enhanced characteristics behavior is observed for 10% Ni substitution (GaFe0.9Ni0.1O3) and higher substitution leads to deterioration of properties with a larger leakage current. It is proposed that the role of Ni substitution can reduce hopping between Fe+3 and Fe+2 as well as suppressing the oxygen vacancies. This work would open new possibilities for integrating polycrystalline GaFeO3 at room temperature for magnetoelectric applications.

Gamma Rhythm Simulations in Alzheimer's Disease

NASA Astrophysics Data System (ADS)

Montgomery, Samuel; Perez, Carlos; Ullah, Ghanim

The different neural rhythms that occur during the sleep-wake cycle regulate the brain's multiple functions. Memory acquisition occurs during fast gamma rhythms during consciousness, while slow oscillations mediate memory consolidation and erasure during sleep. At the neural network level, these rhythms are generated by the finely timed activity within excitatory and inhibitory neurons. In Alzheimer's Disease (AD) the function of inhibitory neurons is compromised due to an increase in amyloid beta (A β) leading to elevated sodium leakage from extracellular space in the hippocampus. Using a Hodgkin-Huxley formalism, heightened sodium leakage current into inhibitory neurons is observed to compromise functionality. Using a simple two neuron system it was observed that as the conductance of the sodium leakage current is increased in inhibitory neurons there is a significant decrease in spiking frequency regarding the membrane potential. This triggers a significant increase in excitatory spiking leading to aberrant network behavior similar to that seen in AD patients. The next step is to extend this model to a larger neuronal system with varying synaptic densities and conductance strengths as well as deterministic and stochastic drives.

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions.

PubMed

Trommer, Jens; Heinzig, André; Mühle, Uwe; Löffler, Markus; Winzer, Annett; Jordan, Paul M; Beister, Jürgen; Baldauf, Tim; Geidel, Marion; Adolphi, Barbara; Zschech, Ehrenfried; Mikolajick, Thomas; Weber, Walter M

2017-02-28

Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation. In this paper, we experimentally demonstrate a solution to suppress the off-state leakage in germanium nanowire Schottky barrier transistors. Thereto, a device layout with two independent gates is used to induce an additional energy barrier to the channel that blocks the undesired carrier type. In addition, the polarity of the same doping-free device can be dynamically switched between p- and n-type. The shown germanium nanowire approach is able to outperform previous polarity-controllable device concepts on other material systems in terms of threshold voltages and normalized on-currents. The dielectric and Schottky barrier interface properties of the device are analyzed in detail. Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.

Parallel interference cancellation for CDMA applications

NASA Technical Reports Server (NTRS)

Divsalar, Dariush (Inventor); Simon, Marvin K. (Inventor); Raphaeli, Dan (Inventor)

1997-01-01

The present invention provides a method of decoding a spread spectrum composite signal, the composite signal comprising plural user signals that have been spread with plural respective codes, wherein each coded signal is despread, averaged to produce a signal value, analyzed to produce a tentative decision, respread, summed with other respread signals to produce combined interference signals, the method comprising scaling the combined interference signals with a weighting factor to produce a scaled combined interference signal, scaling the composite signal with the weighting factor to produce a scaled composite signal, scaling the signal value by the complement of the weighting factor to produce a leakage signal, combining the scaled composite signal, the scaled combined interference signal and the leakage signal to produce an estimate of a respective user signal.

The footprint of CO2 leakage in the water-column: Insights from numerical modeling based on a North Sea gas release experiment

NASA Astrophysics Data System (ADS)

Vielstädte, L.; Linke, P.; Schmidt, M.; Sommer, S.; Wallmann, K.; McGinnis, D. F.; Haeckel, M.

2013-12-01

Assessing the environmental impact of potential CO2 leakage from offshore carbon dioxide storage sites necessitates the investigation of the corresponding pH change in the water-column. Numerical models have been developed to simulate the buoyant rise and dissolution of CO2 bubbles in the water-column and the subsequent near-field dispersion of dissolved CO2 in seawater under ocean current and tidal forcing. In order to test and improve numerical models a gas release experiment has been conducted at 80 m water-depth within the Sleipner area (North Sea). CO2 and Kr (used as inert tracer gas) were released on top of a benthic lander at varying gas flows (<140 kg/day) and bubble sizes (de: 1-6 mm). pCO2 and pH were measured by in situ sensors to monitor the spread of the solute in different vertical heights and distances downstream of the artificial leak. The experiment and numerical analysis show that the impact of such leakage rates is limited to the near-field bottom waters, due to the rapid dissolution of CO2 bubbles in seawater (CO2 is being stripped within the first two to five meters of bubble rise). In particular, small bubbles, which will dissolve close to the seafloor, may cause a dangerous low-pH environment for the marine benthos. However, on the larger scale, the advective transport by e.g. tidal currents, dominates the CO2 dispersal in the North Sea and dilutes the CO2 peak quickly. The model results show that at the small scales (<100 m) of the CO2 plume the lateral eddy diffusion (~0.01 m2/s) has only a negligible effect. Overall, we can postulate that CO2 leakage at a rate of ~ 100 kg per day as in our experiment will only have a localized impact on the marine environment, thereby reducing pH substantially (by 0.4 units) within a diameter of less than 50 m around the release spot (depending on the duration of leakage and the current velocities). Strong currents and tidal cycles significantly reduce the spreading of low-pH water masses into the far-field by efficiently diluting the amount of CO2 in ambient seawater.

Ducted fan inlet/exit and rotor tip flow improvements for vertical lift systems

NASA Astrophysics Data System (ADS)

Akturk, Ali

The current research utilized experimental and computational techniques in 5" and 22" diameter ducted fan test systems that have been custom designed and manufactured. Qualitative investigation of flow around the ducted fan was also performed using smoke flow visualizations. Quantitative measurements consisted of 2D and 3D velocity measurements using planar and Stereoscopic Particle Image Velocimetry (PIV and SPIV), high resolution total pressure measurements using Kiel total pressure probes and real time six-component force and torque measurements. The computational techniques used in this thesis included a recently developed radial equilibrium based rotor model(REBRM) and a three dimensional Reynolds-Averaged Navier Stokes (RANS) based CFD model. A radial equilibrium based rotor model (REBRM) developed by the author was effectively integrated into a three-dimensional RANS based computational system. The PIV measurements and computational flow predictions using (REBRM) near the fan inlet plane were in a good agreement at hover and forward flight conditions. The aerodynamic modifications resulting from the fan inlet flow distortions in forward flight regime were clearly captured in 2D PIV results. High resolution total pressure measurements at the downstream of the fan rotor showed that tip leakage, rotor hub separation, and passage flow related total pressure losses were dominant in hover condition. However, the losses were dramatically increased in forward flight because of inlet lip separation and distortion. A novel ducted fan inlet flow conditioning concept named "Double Ducted Fan" (DDF) was developed. The (DDF) concept has a potential to significantly improve the performance and controllability of VTOL UAVs and many other ducted fan based vertical lift systems. The new concept that will significantly reduce the inlet lip separation related performance penalties used a secondary stationary duct system to control "inlet lip separation" occurring especially at elevated forward flight velocities. The (DDF) is self-adjusting in a wide forward flight velocity range. DDFs corrective aerodynamic in influence becomes more pronounced with increasing flight velocity due to its inherent design properties. RANS simulations of the flow around rotor blades and duct geometry in the rotating frame of reference provided a comprehensive description of the tip leakage and passage flow in the flow environment of the two ducted fan research facilities developed throughout this thesis. The aerodynamic measurements and results of the RANS simulation showed good agreement especially near the tip region. A number of novel tip treatments based on custom designed pressure side extensions were introduced. Various tip leakage mitigation schemes were introduced by varying the chordwise location and the width of the extension in the circumferential direction. The current study showed that a proper selection of the pressure side bump location and width were the two critical parameters in influencing the success of the tip leakage mitigation approach. Significant gains in axial mean velocity component were observed when a proper pressure side tip extension was used. It is also observed that an effective tip leakage mitigation scheme significantly reduced the tangential velocity component near the tip of the axial fan blade. Reduced tip clearance related flow interactions were essential in improving the energy efficiency and range of ducted fan based vehicle. Full and inclined pressure side tip squealers were designed. Squealer tips were effective in changing the overall trajectory of the tip vortex to a higher path in radial direction. The interaction of rotor blades and tip vortex was effectively reduced and aerodynamic performance of the rotor blades was improved. The overall aerodynamic gain was a measurable reduction in leakage mass flow rate. This leakage reduction increased thrust significantly. Full and inclined pressure side tip squealers increased thrust obtained in hover condition by 9.1 % and 9.6 % respectively. A reduction or elimination of the momentum deficit in tip vortices is essential to reduce the adverse performance effects originating from the unsteady and highly turbulent tip leakage flows rotating against a stationary casing. The novel tip treatments developed throughout this thesis research are highly effective in reducing the adverse performance effects of ducted fan systems developed for VTOL vehicles. (Abstract shortened by UMI.)

Ionic currents in the guinea-pig taenia coli.

PubMed Central

Inomata, H; Kao, C Y

1976-01-01

Short segments of portions of taenia coli of the guinea-pig averaging 54 mum X 219 mum X ca. 200 mum have been studied by a double sucrose-gap voltage-clamp technique. 2. The average total capacitance was 0-4 muF, corresponding to approximately 10(4) cells, if a specific membrane capacitance of 3 muF/cm2 were assumed. 3. A significant resistance, averaging 11-4omega, was in series with the membrane, and seriously limited the accuracy of the voltage control possible. 4. On depolarization, an early transient inward current was followed by a late maintained outwary current. 5. The late current was carried mainly by K+, because its direction could be reversed if the preparation were first depolarized in isotonic K2SO4 and held back to the original resting potential. 6. After appropriate corrections for residual capacitative and leakage currents, a reversal potential for the late current (Eb) was determined to be 15-20 mV more negative than the natural resting potential. It was not affected by the amplitude or the duration of the activating voltage step, but could be changed by prolonged applications of holding current. 7. At rest, the ratio of PNa:PK was 0-16:1; for Eb it was 0-05:1. 8. The reversal potential for the transient early inward current (Ea) averaged 22 mV in Krebs-bicarbonate solution, but was shifted to about 35 mV when the late current was first suppressed with tetraethylammonium ion. The shift suggested that there was some overlap of the early and late currents. 9. Reduction of [Na+]o to 50% of normal, or replacement of all Na+ with dimethyldiethanol ammonium ion and choline ion, failed to cause any significant shifts in the reversal potential of the early current or reduce the magnitude of the early current. 10. Reduction of [Ca2+]o to 0-25 or 0-1 of the normal caused shifts of the Ea toward the negative and reductions in the early current. These changes can occur without changes in the maximum chord conductance of the early current, such as might happen in ordinary Krebs-bicarbonate solution, or in preparations which had been depolarized by prior treatment with isotonic K2SO4 and then held back to the original membrane voltage. 11. Increase of [Ca2+]o to 5 times normal increased the early inward current, and the maximum chord conductances of the early and late currents, but did not shift the Ea. 12. In preparations pretreated with TEA, increasing [Ca2+]o to 5 times normal shifted Ea toward 45 mV. 13. The various observations are interpreted to mean that the early current in the taenia coli is carried principally by influx of Ca2+, and not by Na+. PMID:1255524

Martian neutron leakage spectra

NASA Astrophysics Data System (ADS)

Drake, D. M.; Feldman, W. C.; Jakosky, B. M.

1988-06-01

A high-energy nucleon-meson transport code is used to calculate energy spectra of Martian leakage neutrons. Four calculations are used to simulate a uniform surface layer containing various amounts of water, different burial depths of a 50 percent water layer underneath a 1 percent water layer, changing atmospheric pressure, and a thick carbon dioxide ice sheet overlying a "dirty" water ice sheet. Calculated spectra at energies less than about 1000 eV were fitted by a superposition of thermal and epithermal functions having four free parameters, two of which (thermal and epithermal amplitudes) were found to vary systematically and to specify uniquely the configuration in each of the series. Parameter variations depend on the composition of the assumed surface layers through the average atomic mass and the macroscopic scattering and absorption cross sections. It is concluded that measurements of leakage neutron spectra should allow determination of the hydrogen content of surface layers buried to depths up to about 100 g/sq. cm and determination of the thickness of a polar dry ice cap up to a thickness of about 250 g/sq. cm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mittal, Sparsh; Zhang, Zhao

With each CMOS technology generation, leakage energy consumption has been dramatically increasing and hence, managing leakage power consumption of large last-level caches (LLCs) has become a critical issue in modern processor design. In this paper, we present EnCache, a novel software-based technique which uses dynamic profiling-based cache reconfiguration for saving cache leakage energy. EnCache uses a simple hardware component called profiling cache, which dynamically predicts energy efficiency of an application for 32 possible cache configurations. Using these estimates, system software reconfigures the cache to the most energy efficient configuration. EnCache uses dynamic cache reconfiguration and hence, it does not requiremore » offline profiling or tuning the parameter for each application. Furthermore, EnCache optimizes directly for the overall memory subsystem (LLC and main memory) energy efficiency instead of the LLC energy efficiency alone. The experiments performed with an x86-64 simulator and workloads from SPEC2006 suite confirm that EnCache provides larger energy saving than a conventional energy saving scheme. For single core and dual-core system configurations, the average savings in memory subsystem energy over a shared baseline configuration are 30.0% and 27.3%, respectively.« less

Illumination effects on the ferroelectric and photovoltaic properties of Pb0.95La0.05Zr0.54Ti0.46O3 thin film based asymmetric MFM structure

NASA Astrophysics Data System (ADS)

Batra, V.; Kotru, S.

2017-12-01

We report the effects of illumination on the ferroelectric and photovoltaic properties of the Pb0.95La0.05Zr0.54Ti0.46O3 (PLZT) thin film based asymmetric metal/ferroelectric/metal capacitor structure, using Au as a top electrode and Pt as a bottom electrode. Conductive-AFM (atomic force microscopy) measurements demonstrate the evolution of charge carriers in PLZT films on illumination. The capacitance-voltage, the polarization-electric field, and the leakage current-voltage characteristics of the asymmetric Au/PLZT/Pt capacitor are discussed under dark and illuminated conditions. The light generates charge carriers in the film, which increase the coercive field and net remnant polarization and decrease the capacitance. The leakage current of the capacitor increases by an order of magnitude upon illumination. The leakage current data analyzed to study the conduction mechanism shows that the capacitor structure follows the Schottky emission "1/4" law. The illuminated current density-voltage curve of the capacitor shows non-zero photovoltaic parameters. An open circuit voltage (Voc) of -0.19 V and a short circuit current density (Jsc) of 1.48 μA/cm2 were obtained in an unpoled film. However, after positive poling, the illuminated curve shifts towards a higher voltage value resulting in a Voc of -0.93 V. After negative poling, the curve shows no change in the Voc value. For both poling directions, the Jsc values decrease. The photocurrent in the capacitor shows a linear variation with the incident illumination intensity.

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaidi, Z. H., E-mail: zaffar.zaidi@sheffield.ac.uk; Lee, K. B.; Qian, H.

2014-12-28

In this work, we have compared SiN{sub x} passivation, hydrogen peroxide, and sulfuric acid treatment on AlGaN/GaN HEMTs surface after full device fabrication on Si substrate. Both the chemical treatments resulted in the suppression of device pinch-off gate leakage current below 1 μA/mm, which is much lower than that for SiN{sub x} passivation. The greatest suppression over the range of devices is observed with the sulfuric acid treatment. The device on/off current ratio is improved (from 10{sup 4}–10{sup 5} to 10{sup 7}) and a reduction in the device sub-threshold (S.S.) slope (from ∼215 to 90 mV/decade) is achieved. The sulfuric acid ismore » believed to work by oxidizing the surface which has a strong passivating effect on the gate leakage current. The interface trap charge density (D{sub it}) is reduced (from 4.86 to 0.90 × 10{sup 12 }cm{sup −2} eV{sup −1}), calculated from the change in the device S.S. The gate surface leakage current mechanism is explained by combined Mott hopping conduction and Poole Frenkel models for both untreated and sulfuric acid treated devices. Combining the sulfuric acid treatment underneath the gate with the SiN{sub x} passivation after full device fabrication results in the reduction of D{sub it} and improves the surface related current collapse.« less

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers.

PubMed

Zheng, Meijuan; Zhang, Guozhen; Wang, Xiao; Wan, Jiaxian; Wu, Hao; Liu, Chang

2017-12-01

GaN-based metal-oxide-semiconductor capacitors with ZrO 2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10 -9  A/cm 2 at 1 V was obtained when O 3 was used for the growth of ZrO 2 . Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.

Experimental comparison of manually inflatable versus autoinflatable retrograde cardioplegia catheters.

PubMed

Menasché, P

1994-08-01

A pig model of cardiopulmonary bypass and cardioplegic arrest was used to compare leakage around manually inflatable and autoinflatable retrograde coronary sinus cardioplegia catheters. Warm and cold blood cardioplegia were alternately delivered through the catheter under study at both low (16 to 24 mm Hg) and high (30 to 40 mm Hg) perfusion pressures. During each experiment, the coronary sinus ostium was sealed around the shaft of the retrograde cannula so that all backflow occurring during cardioplegia delivery could be collected by a separate drainage catheter inserted directly into the coronary sinus approximately midway between the right atrium and the distal end of the balloon. Only two of the 52 manually inflatable cannulas leaked. The leakage in both cases was negligible (< 1% of the total retrograde cardioplegia flow). In contrast, leakage occurred with 57 of the 73 autoinflatable devices tested (p < 0.0001) and averaged 22% +/- 3% (mean +/- the standard error of the mean) of the total retrograde flow. The temperature of the cardioplegia solution had no effect on leakage. These results suggest that autoinflatable balloons inconsistently seal the coronary sinus during cardioplegia infusion, thereby decreasing the amount of flow that effectively reaches the myocardium. This should make surgeons cautious about using them with warm blood cardioplegia, which largely relies upon the delivery of sufficiently high retrograde nutritive flows for preventing cardioprotective aerobic arrest from becoming a life-threatening ischemic arrest.

Lowering whole-body radiation doses in pediatric intensity-modulated radiotherapy through the use of unflattened photon beams.

PubMed

Cashmore, Jason; Ramtohul, Mark; Ford, Dan

2011-07-15

Intensity modulated radiotherapy (IMRT) has been linked with an increased risk of secondary cancer induction due to the extra leakage radiation associated with delivery of these techniques. Removal of the flattening filter offers a simple way of reducing head leakage, and it may be possible to generate equivalent IMRT plans and to deliver these on a standard linear accelerator operating in unflattened mode. An Elekta Precise linear accelerator has been commissioned to operate in both conventional and unflattened modes (energy matched at 6 MV) and a direct comparison made between the treatment planning and delivery of pediatric intracranial treatments using both approaches. These plans have been evaluated and delivered to an anthropomorphic phantom. Plans generated in unflattened mode are clinically identical to those for conventional IMRT but can be delivered with greatly reduced leakage radiation. Measurements in an anthropomorphic phantom at clinically relevant positions including the thyroid, lung, ovaries, and testes show an average reduction in peripheral doses of 23.7%, 29.9%, 64.9%, and 70.0%, respectively, for identical plan delivery compared to conventional IMRT. IMRT delivery in unflattened mode removes an unwanted and unnecessary source of scatter from the treatment head and lowers leakage doses by up to 70%, thereby reducing the risk of radiation-induced second cancers. Removal of the flattening filter is recommended for IMRT treatments. Copyright © 2011 Elsevier Inc. All rights reserved.

Evaluation method of leachate leaking from carcass burial site

NASA Astrophysics Data System (ADS)

Park, S.; Kim, H.; Lee, M.; Lee, K.; Kim, S.; Kim, M.; Kim, H.; Kim, T.; Han, J.

2012-12-01

More than 150,000 cattle carcasses and 3,140,000 pig carcasses were buried all over the nation in Korea because of 2010 outbreak of foot and mouth disease (FMD). Various disposal Techniques such as incineration, composting, rendering, and burial have been developed and applied to effectively dispose an animal carcass. Since a large number of carcasses should be disposed for a short-term period to prevent the spread of FMD virus, most of the carcasses were disposed by mass burial technique. However, a long-term management and monitoring of leachate discharges are required because mass burial can cause soil and groundwater contamination. In this study, we used key parameters related to major components of leachate such as NH4-N, NO3-N, Cl-, E.coli and electrical conductivity as potential leachate contamination indicator to determine leachate leakage from the site. We monitored 300 monitoring wells in both burial site and the monitoring well 5m away from burial sites to identify leachate leaking from burial site. Average concentration of NH3-N in 300 monitoring wells, both burial site and the well 5m away from burial sites, were 2,593 mg/L and 733 mg/L, respectively. 24% out of 300 monitoring wells showed higher than 10 mg/L NH4-N, 100 mg/L Cl- and than 800 μS/cm electrical conductivity. From this study, we set up 4 steps guidelines to evaluate leachate leakage like; step 1 : High potential step of leachate leakage, step 2 : Middle potential step of leachate leakage, step 3 : Low potential step of leachate leakage, step 4 : No leachate leakage. On the basis of this result, we moved 34 leachate leaking burial sites to other places safely and it is necessary to monitor continuously the monitoring wells for environmental protection and human health.

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors.

PubMed

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; Bergstrom, Paul L; Banyai, Douglas; Savaikar, Madhusudan A; Jaszczak, John A; Yap, Yoke Khin

2016-02-05

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (in-situ STM-TEM). As suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.

Structural evaluation of a DTHR bundle divertor particle collector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prevenslik, T.V.

1980-09-01

The purpose of this report is to present a structural evaluation of the current bundle divertor particle collector BDPC design under a peak heat flux in relation to criteria that protect against coolant leakage into the plasma over replacement schedules planned during DTHR operation. In addition, an assessment of the BDPC structural integrity at higher heat fluxes is presented. Further, recommendations for modifications in the current BDPC design that would improve design reliability to be considered in future design studies are described. Finally, experimental test programs directed to establishing materials data necessary in providing greater confidence in subsequent structural evaluationsmore » of BDPC designs in relation to coolant leakage over planned replacement schedules are identified.« less

Gallium phosphide high temperature diodes

NASA Technical Reports Server (NTRS)

Chaffin, R. J.; Dawson, L. R.

1981-01-01

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

Electrical evaluation of crack generation in SiNx and SiOxNy thin-film encapsulation layers for OLED displays

NASA Astrophysics Data System (ADS)

Park, Eun Kil; Kim, Sungmin; Heo, Jaeyeong; Kim, Hyeong Joon

2016-05-01

By measuring leakage current density, we detected crack generation in silicon nitride (SiNx) and silicon oxynitride (SiOxNy) thin-film encapsulation layers, and correlated with the films' water vapor permeability characteristics. After repeated bending cycles, both the changes in water vapor transmission rate and leakage current density were directly proportional to the crack density. Thick SiNx films had better water vapor barrier characteristics in their pristine state, but cyclic loading led to fast failure. Varying the atomic concentration of the SiOxNy films affected their bending reliability. We attribute these differences to changes in the shape of the crack tip as the oxygen content varies.

Method for surface passivation and protection of cadmium zinc telluride crystals

DOEpatents

Mescher, Mark J.; James, Ralph B.; Schlesinger, Tuviah E.; Hermon, Haim

2000-01-01

A method for reducing the leakage current in CZT crystals, particularly Cd.sub.1-x Zn.sub.x Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd.sub.0.9 Zn.sub.0.1 Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state.

Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

2018-01-01

Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

Bacterial leakage through temporary fillings in core buildup composite material - an in vitro study.

PubMed

Rechenberg, Dan-Krister; Schriber, Martina; Attin, Thomas

2012-08-01

To evaluate the ability of the provisional filling material Cavit-W alone or in combination with different restorative materials to prevent bacterial leakage through simulated access cavities in a resin buildup material. LuxaCore resin cylinders were subdivided into 4 experimental groups (n = 30), plus a positive (n = 5) and a negative (n = 30) control group. One bore hole was drilled through each cylinder, except those in the negative control group (G1). The holes were filled with Cavit-W (G2), Cavit-W and Ketac-Molar (glassionomer cement, G3), Cavit-W and LuxaCore bonded with LuxaBond (G4), Cavit-W and LuxaCore (G5), or left empty (G6). Specimens were mounted in a two-chamber leakage setup. The upper chamber was inoculated with E. faecalis. An enterococci-selective broth was used in the lower chamber. Leakage was assessed for 60 days and compared using Fisher's exact test (α < 0.05) corrected for multiple testing. Bacteria penetrated specimens in the positive control group within 24 h. All specimens in the negative control group resisted bacterial leakage for 60 days. Twenty-seven specimens in G2, 26 in G3, and 16 specimens in G5 showed bacterial leakage by the end of the experiment. G4 prevented bacterial penetration completely. The statistical comparison revealed significant differences between G4 and all other experimental groups. Under the current conditions, Cavit-W alone or combined with a glass-ionomer cement did not prevent bacterial leakage through a resin buildup material for two months. In contrast, covering Cavit-W with a bonded resin material resulted in a bacteria-tight seal for two months.

Hypertonic Saline Reduces Vascular Leakage in a Mouse Model of Severe Dengue

PubMed Central

Tan, Kar Wai; Angeli, Veronique; Moochhala, Shabbir; Ooi, Eng Eong; Alonso, Sylvie

2013-01-01

Dengue (DEN) is a mosquito-borne viral disease and represents a serious public health threat and an economical burden throughout the tropics. Dengue clinical manifestations range from mild acute febrile illness to severe DEN hemorrhagic fever/DEN shock syndrome (DHF/DSS). Currently, resuscitation with large volumes of isotonic fluid remains the gold standard of care for DEN patients who develop vascular leakage and shock. Here, we investigated the ability of small volume of hypertonic saline (HTS) suspensions to control vascular permeability in a mouse model of severe DEN associated with vascular leakage. Several HTS treatment regimens were considered and our results indicated that a single bolus of 7.5% NaCl at 4 mL per kg of body weight administered at the onset of detectable vascular leakage rapidly and significantly reduced vascular leak for several days after injection. This transient reduction of vascular leakage correlated with reduced intestine and liver damage with restoration of the hepatic functions, and resulted in delayed death of the infected animals. Mechanistically, we showed that HTS did not directly impact on the viral titers but resulted in lower immune cells counts and decreased systemic levels of soluble mediators involved in vascular permeability. In addition, we demonstrated that neutrophils do not play a critical role in DEN-associated vascular leakage and that the therapeutic effect of HTS is not mediated by its impact on the neutrophil counts. Together our data indicate that HTS treatment can transiently but rapidly reduce dengue-associated vascular leakage, and support the findings of a recent clinical trial which evaluated the efficacy of a hypertonic suspension to impact on vascular permeability in DSS children. PMID:23637867

Effects of sub-seabed CO2 leakage: Short- and medium-term responses of benthic macrofaunal assemblages.

PubMed

Amaro, T; Bertocci, I; Queiros, A M; Rastelli, E; Borgersen, G; Brkljacic, M; Nunes, J; Sorensen, K; Danovaro, R; Widdicombe, S

2018-03-01

The continued rise in atmospheric carbon dioxide (CO 2 ) levels is driving climate change and temperature shifts at a global scale. CO 2 Capture and Storage (CCS) technologies have been suggested as a feasible option for reducing CO 2 emissions and mitigating their effects. However, before CCS can be employed at an industrial scale, any environmental risks associated with this activity should be identified and quantified. Significant leakage of CO 2 from CCS reservoirs and pipelines is considered to be unlikely, however direct and/or indirect effects of CO 2 leakage on marine life and ecosystem functioning must be assessed, with particular consideration given to spatial (e.g. distance from the source) and temporal (e.g. duration) scales at which leakage impacts could occur. In the current mesocosm experiment we tested the potential effects of CO 2 leakage on macrobenthic assemblages by exposing infaunal sediment communities to different levels of CO 2 concentration (400, 1000, 2000, 10,000 and 20,000 ppm CO 2 ), simulating a gradient of distance from a hypothetic leakage, over short-term (a few weeks) and medium-term (several months). A significant impact on community structure, abundance and species richness of macrofauna was observed in the short-term exposure. Individual taxa showed idiosyncratic responses to acidification. We conclude that the main impact of CO 2 leakage on macrofaunal assemblages occurs almost exclusively at the higher CO 2 concentration and over short time periods, tending to fade and disappear at increasing distance and exposure time. Although under the cautious perspective required by the possible context-dependency of the present findings, this study contributes to the cost-benefit analysis (environmental risk versus the achievement of the intended objectives) of CCS strategies. Copyright © 2018. Published by Elsevier Ltd.

Comparing Natural Gas Leakage Detection Technologies Using an Open-Source "Virtual Gas Field" Simulator.

PubMed

Kemp, Chandler E; Ravikumar, Arvind P; Brandt, Adam R

2016-04-19

We present a tool for modeling the performance of methane leak detection and repair programs that can be used to evaluate the effectiveness of detection technologies and proposed mitigation policies. The tool uses a two-state Markov model to simulate the evolution of methane leakage from an artificial natural gas field. Leaks are created stochastically, drawing from the current understanding of the frequency and size distributions at production facilities. Various leak detection and repair programs can be simulated to determine the rate at which each would identify and repair leaks. Integrating the methane leakage over time enables a meaningful comparison between technologies, using both economic and environmental metrics. We simulate four existing or proposed detection technologies: flame ionization detection, manual infrared camera, automated infrared drone, and distributed detectors. Comparing these four technologies, we found that over 80% of simulated leakage could be mitigated with a positive net present value, although the maximum benefit is realized by selectively targeting larger leaks. Our results show that low-cost leak detection programs can rely on high-cost technology, as long as it is applied in a way that allows for rapid detection of large leaks. Any strategy to reduce leakage should require a careful consideration of the differences between low-cost technologies and low-cost programs.

Routine Use of Contrast Swallow After Total Gastrectomy and Esophagectomy: Is it Justified?

PubMed

El-Sourani, Nader; Bruns, Helge; Troja, Achim; Raab, Hans-Rudolf; Antolovic, Dalibor

2017-01-01

After gastrectomy or esophagectomy, esophagogastrostomy and esophagojejunostomy are commonly used for reconstruction. Water-soluble contrast swallow is often used as a routine screening to exclude anastomotic leakage during the first postoperative week. In this retrospective study, the sensitivity and specificity of oral water-soluble contrast swallow for the detection of anastomotic leakage and its clinical symptoms were analysed. Records of 104 consecutive total gastrectomies and distal esophagectomies were analysed. In all cases, upper gastrointestinal contrast swallow with the use of a water-soluble contrast agent was performed on the 5 th postoperative day. Extravasation of the contrast agent was defined as anastomotic leakage. When anastomotic insufficiency was suspected but no extravasation was present, a computed tomography (CT) scan and upper endoscopy were performed. Oral contrast swallow detected 7 anastomotic leaks. Based on CT-scans and upper endoscopy, the true number of anastomotic leakage was 15. The findings of the oral contrast swallow were falsely positive in 4 and falsely negative in 12 patients, respectively. The sensitivity and specificity of the oral contrast swallow was 20% and 96%, respectively. Routine radiological contrast swallow following total gastrectomy or distal esophagectomy cannot be recommended. When symptoms of anastomotic leakage are present, a CT-scan and endoscopy are currently the methods of choice.

On the feasibility of the computational modelling of the endoluminal vacuum-assisted closure of an oesophageal anastomotic leakage

PubMed Central

Bellomo, Facundo J.; Rosales, Iván; del Castillo, Luis F.; Sánchez, Ricardo; Turon, Pau

2018-01-01

Endoluminal vacuum-assisted closure (E-VAC) is a promising therapy to treat anastomotic leakages of the oesophagus and bowel which are associated with high morbidity and mortality rates. An open-pore polyurethane foam is introduced into the leakage cavity and connected to a device that applies a suction pressure to accelerate the closure of the defect. Computational analysis of this healing process can advance our understanding of the biomechanical mechanisms at play. To this aim, we use a dual-stage finite-element analysis in which (i) the structural problem addresses the cavity reduction caused by the suction and (ii) a new constitutive formulation models tissue healing via permanent deformations coupled to a stiffness increase. The numerical implementation in an in-house code is described and a qualitative example illustrates the basic characteristics of the model. The computational model successfully reproduces the generic closure of an anastomotic leakage cavity, supporting the hypothesis that suction pressure promotes healing by means of the aforementioned mechanisms. However, the current framework needs to be enriched with empirical data to help advance device designs and treatment guidelines. Nonetheless, this conceptual study confirms that computational analysis can reproduce E-VAC of anastomotic leakages and establishes the bases for better understanding the mechanobiology of anastomotic defect healing. PMID:29515846

Integrated CMOS photodetectors and signal processing for very low-level chemical sensing with the bioluminescent bioreporter integrated circuit

NASA Technical Reports Server (NTRS)

Bolton, Eric K.; Sayler, Gary S.; Nivens, David E.; Rochelle, James M.; Ripp, Steven; Simpson, Michael L.

2002-01-01

We report an integrated CMOS microluminometer optimized for the detection of low-level bioluminescence as part of the bioluminescent bioreporter integrated circuit (BBIC). This microluminometer improves on previous devices through careful management of the sub-femtoampere currents, both signal and leakage, that flow in the front-end processing circuitry. In particular, the photodiode is operated with a reverse bias of only a few mV, requiring special attention to the reset circuitry of the current-to-frequency converter (CFC) that forms the front-end circuit. We report a sub-femtoampere leakage current and a minimum detectable signal (MDS) of 0.15 fA (1510 s integration time) using a room temperature 1.47 mm2 CMOS photodiode. This microluminometer can detect luminescence from as few as 5000 fully induced Pseudomonas fluorescens 5RL bacterial cells. c2002 Elsevier Science B.V. All rights reserved.

Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, J.-Y.; Nielsen, M. C.; Rymaszewski, E. J.; Lu, T.-M.

2000-02-01

Room temperature deposition of tantalum oxide films on metallized silicon substrates was investigated by reactive pulsed magnetron sputtering of Ta in an Ar/O2 ambient. The dielectric constant of the tantalum oxide ranged from 19 to 31 depending on the oxygen percentage [P(%)=PO2/(PO2+PAr)] used during sputtering. The leakage current density was less than 10 nA/cm2 at 0.5 MV/cm electric field and the dielectric breakdown field was greater than 3.8 MV/cm for P=60%. A charge storage as high as 3.3 μF/cm2 was achieved for 70-Å-thick film. Pulse frequency variation (from 20 to 200 kHz) did not give a significant effect in the electrical properties (dielectric constant or leakage current density) of the Ta2O5 films.

Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors

NASA Astrophysics Data System (ADS)

Sheremet, V.; Genç, M.; Gheshlaghi, N.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2018-01-01

Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch in addition to conventional Si3N4 dielectric surface passivation leads to decrease in the reverse bias leakage current by a factor of two as well as a decrease in the shunt current under forward bias by an order of magnitude. Mitigation of the leakage currents owing to the two-step passivation leads to significant increase in the radiant intensity of LEDs by more than a factor of two compared to the conventional single step surface passivation. Further, micro-dome patterned surface of Si3N4 passivation layer allow enhanced light extraction from LEDs.

Fabrication of large area Si cylindric drift detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, W.; Kraner, H.W.; Li, Z.

1993-04-01

Advanced Si drift detector, a large area cylindrical drift detector (CDD), processing steps, with the exception of the ion implantation, were carried out in the BNL class 100 cleanroom. The double-side planer process technique was developed for the fabrication of CDD. Important improvements of the double-side planer process in this fabrication are the introduction of Al implantation protection mask and the remaining of a 1000 Angstroms oxide layer in the p-window during the implantation. Another important design of the CDD is the structure called ``river,`` which ,allows the current generated on Si-SiO{sub 2} interface to ``flow`` into the guard anode,more » and thus can minimize the leakage current at the signed anode. The test result showed that most of the signal anodes have the leakage current about 0.3 nA/cm{sup 2} for the best detector.« less

Burner ignition system

DOEpatents

Carignan, Forest J.

1986-01-21

An electronic ignition system for a gas burner is battery operated. The battery voltage is applied through a DC-DC chopper to a step-up transformer to charge a capacitor which provides the ignition spark. The step-up transformer has a significant leakage reactance in order to limit current flow from the battery during initial charging of the capacitor. A tank circuit at the input of the transformer returns magnetizing current resulting from the leakage reactance to the primary in succeeding cycles. An SCR in the output circuit is gated through a voltage divider which senses current flow through a flame. Once the flame is sensed, further sparks are precluded. The same flame sensor enables a thermopile driven main valve actuating circuit. A safety valve in series with the main gas valve responds to a control pressure thermostatically applied through a diaphragm. The valve closes after a predetermined delay determined by a time delay orifice if the pilot gas is not ignited.

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc 2O 3 gate dielectric or surface passivation

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jessen, G. H.; Jenkins, T. J.; Yannuzi, M. J.; Via, G. D.; Crespo, A.

2003-10-01

The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc 2O 3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (˜0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (˜0.6 A/mm and ˜5%). The Sc 2O 3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ˜5% to 12%) on the surface passivated HEMTs, showing that Sc 2O 3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance

NASA Astrophysics Data System (ADS)

Pham, T. T.; Maréchal, A.; Muret, P.; Eon, D.; Gheeraert, E.; Rouger, N.; Pernot, J.

2018-04-01

Metal oxide semiconductor capacitors were fabricated using p - type oxygen-terminated (001) diamond and Al2O3 deposited by atomic layer deposition at two different temperatures 250 °C and 380 °C. Current voltage I(V), capacitance voltage C(V), and capacitance frequency C(f) measurements were performed and analyzed for frequencies ranging from 1 Hz to 1 MHz and temperatures from 160 K to 360 K. A complete model for the Metal-Oxide-Semiconductor Capacitors electrostatics, leakage current mechanisms through the oxide into the semiconductor and small a.c. signal equivalent circuit of the device is proposed and discussed. Interface states densities are then evaluated in the range of 1012eV-1cm-2 . The strong Fermi level pinning is demonstrated to be induced by the combined effects of the leakage current through the oxide and the presence of diamond/oxide interface states.

Study of gain homogeneity and radiation effects of Low Gain Avalanche Pad Detectors

NASA Astrophysics Data System (ADS)

Gallrapp, C.; Fernández García, M.; Hidalgo, S.; Mateu, I.; Moll, M.; Otero Ugobono, S.; Pellegrini, G.

2017-12-01

Silicon detectors with intrinsic charge amplification implementing a n++-p+-p structure are considered as a sensor technology for future tracking and timing applications in high energy physics experiments. The performance of the intrinsic gain in Low Gain Avalanche Detectors (LGAD) after irradiation is crucial for the characterization of radiation hardness and timing properties in this technology. LGAD devices irradiated with reactor neutrons or 800 MeV protons reaching fluences of 2.3 × 1016 neq/cm2 were characterized using Transient Current Technique (TCT) measurements with red and infra-red laser pulses. Leakage current variations observed in different production lots and within wafers were investigated using Thermally Stimulated Current (TSC). Results showed that the intrinsic charge amplification is reduced with increasing fluence up to 1015 neq/cm2 which is related to an effective acceptor removal. Further relevant issues were charge collection homogeneity across the detector surface and leakage current performance before and after irradiation.

Low-energy BF2, BCl2, and BBr2 implants for ultrashallow P+-N junctions

NASA Astrophysics Data System (ADS)

Nandan, S. R.; Agarwal, Vikas; Banerjee, Sanjay K.

1997-08-01

We have examined low energy BCl2 and BBr2 implants as a means of fabricating ultra-shallow P+-N junctions. Five keV and 9 keV BCl2 implants and 18 keV BBr2 implants have been compared to 5 keV BF2 implants to study the benefits of using these species. BCl2 and BBr2, being heavier species, have a lower projected range and produce more damage. The greater damage restricts channeling, resulting in shallower as-implanted profiles. The increased damage amorphizes the substrate at low implant doses which results in reduced transient enhanced diffusion (TED) during the post-implant anneal. Post-anneal SIMS profiles indicate a junction depth reduction of over 10 nm (at 5 X 1017 cm-3 background doping) for 5 keV BCl2 implants as compared to 5 keV BF2 implants. Annealed junctions as shallow as 10 nm have been obtained from the 18 keV BBr2 implants. The increased damage degrades the electrical properties of these junctions by enhancing the leakage current densities. BCl2 implanted junctions have leakage current densities of approximately 1 (mu) A/cm2 as compared to 10 nA/cm2 for the BF2 implants. BBr2 implants have a lower leakage density of approximately 50 nA/cm2. Low energy BBr2 implants offer an exciting alternative for fabricating low leakage, ultra-shallow P+-N junctions.

Southern ocean winds during past (and future) warm periods and their affect on Agulhas Leakage and the Atlantic Merdional Overturning Circulation

NASA Astrophysics Data System (ADS)

Patel, N. P.; Deconto, R. M.; Condron, A.

2013-12-01

The leakage of Agulhas Current water into the South Atlantic is now thought to be a major player in global climate change. The volume of Agulhas Leakage is linked to the strength and position of southern westerlies. Past changes in the westerly winds over the southern ocean have been noted on glacial-interglacial timescales, in response to both Northern Hemispheric conditions and more proximal changes in Antarctic ice volume. Over recent decades, a southward shift in the southern ocean westerlies has been observed and is expected to continue with projected climate warming. The resulting increase in Agulhas Leakage is thought to allow more warm, salty water from the Indian Ocean into the Atlantic, with the potential to impact the Atlantic Meridional Overturning circulation (AMOC). Some climate models have predicted global warming will result in a slowdown and weakening of the AMOC. A strengthening of the Agulhas Leakage therefore has the potential to counteract that slowdown. Much of the Agulhas leakage is carried in small eddies rotating off the main flow south of Cape Horn. High ocean model resolution (< 1/2°) is therefore required to simulate their response to the overlying wind field. However the majority of previous model studies have been too coarse in resolution to quantify the link between the Agulhas Leakage the AMOC. Here we run a series of global high-resolution ocean model (1/6°) experiments using the MITgcm to test the effect of a shift in the southern hemisphere westerlies on the Agulhas Leakage. A prescribed perturbation of the winds near South Africa shows a significant increase in Agulhas eddies into the Atlantic. Following this, we have conducted longer simulations with the winds over the Southern Ocean perturbed to reflect both past and possible future shifts in the wind field to quantify changes in North Atlantic Deep Water formation and the overall response of the AMOC to this perturbation.

Geologic Storage at the Basin Scale: Region-Based Basin Modeling, Powder River Basin (PRB), NE Wyoming and SE Montana

NASA Astrophysics Data System (ADS)

Melick, J. J.; Gardner, M. H.

2008-12-01

Carbon capture and storage from the over 2000 power plants is estimated at 3-5 GT/yr, which requires large- scale geologic storage of greenhouse gasses in sedimentary basins. Unfortunately, determination of basin scale storage capacity is currently based on oversimplified geologic models that are difficult to validate. Simplification involves reducing the number of geologic parameters incorporated into the model, modeling with large grid cells, and treatment of subsurface reservoirs as homogeneous media. The latter problem reflects the focus of current models on fluid and/or fluid-rock interactions rather than fluid movement and migration pathways. For example, homogeneous models over emphasize fluid behavior, like the buoyancy of super-critical CO2, and hence overestimate leakage rates. Fluid mixing and fluid-rock interactions cannot be assessed with models that only investigate these reactions at a human time scale. Preliminary and conservative estimates of the total pore volume for the PRB suggest 200 GT of supercritical CO2 can be stored in this typical onshore sedimentary basin. The connected pore volume (CPV) however is not included in this estimate. Geological characterization of the CPV relates subsurface storage units to the most prolific reservoir classes (RCs). The CPV, number of well penetrations, supercritical storage area, and potential leakage pathways characterize each RC. Within each RC, a hierarchy of stratigraphic cycles is populated with stationary sedimentation regions that control rock property distributions by correlating environment of deposition (EOD) to CPV. The degree to which CPV varies between RCs depends on the geology and attendant heterogeneity retained in the fluid flow model. Region-based modeling of the PRB incorporates 28000 wells correlated across a 70,000 Km2 area, 2 km thick on average. Within this basin, five of the most productive RCs were identified from production history and placed in a fourfold stratigraphic framework (second- through fourth-order cycles). Within the small- scale 4th-order sequences (30-150-m thick, 16 total), sedimentation regions, each corresponding to an EOD, are defined by thickness, lithology and core-calibrated well-log patterns. This talk illustrates the workflow by focusing on one of the 16 layers in the basin-scale model. Isopach maps from this sample layer conform to depositional patterns confirmed through definition of five core-calibrated, well-log defined sedimentation regions. Lithology distributions also conform to thickness trends in nearshore deltas, but not in offshore regions, where sand-rich and sheet-like, but thin-bedded sandstones are flanked by mud-rich intervals of equivalent thickness. These maps represent sedimentation patterns confined by basal erosional sequence boundary and basin-wide bentonite, yet containing up to seven high-frequency sequence boundaries. To illustrate over simplification problems in this same layer, a 14000 km2 sample area is 600 km3 and using standard averaging methods, which are considered to be geologic in origin, the CPV is 16 km3. However, averaging increases connectivity with high CPV more uniformly distributed; significantly, the key mud belt region separating nearshore from offshore sandstones is not represented. Region-based modeling of this layer yields 13 km3 (110 Bbl). Furthermore, significant vertical leakage may exist from the 20000 well penetrations and faults and fractures along the western basin margin. This example illustrates the importance of accurately characterizing heterogeneity and distributing CPV using sedimentation regions.

Microwave synthesis of noncentrosymmetric BaTiO3 truncated nanocubes for charge storage applications.

PubMed

Swaminathan, V; Pramana, Stevin S; White, T J; Chen, L; Chukka, Rami; Ramanujan, R V

2010-11-01

Truncated nanocubes of barium titanate (BT) were synthesized using a rapid, facile microwave-assisted hydrothermal route. Stoichiometric composition of pellets of nanocube BT powders was prepared by two-stage microwave process. Characterization by powder XRD, Rietveld refinement, SEM, TEM, and dielectric and polarization measurements was performed. X-ray diffraction revealed a polymorphic transformation from cubic Pm3̅m to tetragonal P4mm after 15 min of microwave irradiation, arising from titanium displacement along the c-axis. Secondary electron images were examined for nanocube BT synthesis and annealed at different timings. Transmission electron microscopy showed a narrow particle size distribution with an average size of 70 ± 9 nm. The remanence and saturation polarization were 15.5 ± 1.6 and 19.3 ± 1.2 μC/cm(2), respectively. A charge storage density of 925 ± 47 nF/cm(2) was obtained; Pt/BT/Pt multilayer ceramic capacitor stack had an average leakage current density of 5.78 ± 0.46 × 10(-8) A/cm(2) at ±2 V. The significance of this study shows an inexpensive and facile processing platform for synthesis of high-k dielectric for charge storage applications.

Improved Seals for High Temperature Airframe Applications

NASA Technical Reports Server (NTRS)

DeMange, Jeffrey J.; Dunlap, Patrick H.; Steinetz, Bruce M.

2006-01-01

Current thermal barrier seals, such as those used on the Space Shuttle, are insufficient to fully meet the demands of future hypersonic vehicles and reentry spacecraft. Previous investigations have demonstrated limited usage temperatures, as evidenced by a decreased ability to maintain sealing effectiveness at high temperatures (i.e., inadequate resiliency). In order to improve resiliency at elevated temperatures, Rene 41 (Allvac) was substituted for Inconel X-750 (Special Metals Corp.) as the spring tube material in the existing seal design. A seal construction incorporating the Rene 41 spring tube was fabricated and tested against the baseline Inconel X-750 spring tube seal. Although resiliency improvements were not as dramatic as in previous tests with the spring tubes alone, seals incorporating the Rene 41 spring tube exhibited an average 20 percent resiliency enhancement up to 1750 F when compared to seals containing the Inconel spring tube. In addition, the seals with the Rene 41 spring tubes showed less reduction in resiliency as temperatures increased above 1200 F. Results also indicated the Saffil (Saffil Ltd.) insulation in the core of the seal contributed more to resiliency than previously thought. Leakage data did not demonstrate an improvement with the seal containing the Rene 41 spring tube. However, based upon resiliency results, one could reasonably expect the Rene 41 version of the seal to track gap openings over a wider range. Therefore it would exhibit lower leakage than the Inconel X-750 version as the seal gap opens during a typical mission.

Measured values of coal mine stopping resistance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oswald, N.; Prosser, B.; Ruckman, R.

2008-12-15

As coal mines become larger, the number of stoppings in the ventilation system increases. Each stopping represents a potential leakage path which must be adequately represented in the ventilation model. Stopping resistance can be calculated using two methods, the USBM method, used to determine a resistance for a single stopping, and the MVS technique, in which an average resistance is calculated for multiple stoppings. Through MVS data collected from ventilation surveys of different subsurface coal mines, average resistances for stoppings were determined for stopping in poor, average, good, and excellent conditions. The calculated average stoppings resistance were determined for concretemore » block and Kennedy stopping. Using the average stopping resistance, measured and calculated using the MVS method, provides a ventilation modeling tool which can be used to construct more accurate and useful ventilation models. 3 refs., 3 figs.« less

Integrating Flexible Sensor and Virtual Self-Organizing DC Grid Model With Cloud Computing for Blood Leakage Detection During Hemodialysis.

PubMed

Huang, Ping-Tzan; Jong, Tai-Lang; Li, Chien-Ming; Chen, Wei-Ling; Lin, Chia-Hung

2017-08-01

Blood leakage and blood loss are serious complications during hemodialysis. From the hemodialysis survey reports, these life-threatening events occur to attract nephrology nurses and patients themselves. When the venous needle and blood line are disconnected, it takes only a few minutes for an adult patient to lose over 40% of his / her blood, which is a sufficient amount of blood loss to cause the patient to die. Therefore, we propose integrating a flexible sensor and self-organizing algorithm to design a cloud computing-based warning device for blood leakage detection. The flexible sensor is fabricated via a screen-printing technique using metallic materials on a soft substrate in an array configuration. The self-organizing algorithm constructs a virtual direct current grid-based alarm unit in an embedded system. This warning device is employed to identify blood leakage levels via a wireless network and cloud computing. It has been validated experimentally, and the experimental results suggest specifications for its commercial designs. The proposed model can also be implemented in an embedded system.

Essentials for Successful and Widespread LED Lighting Adoption

NASA Astrophysics Data System (ADS)

Khan, Nisa

2011-03-01

Solid-state lighting (SSL), with light-emitting diodes (LEDs) as the light source, is a growing and essential field, particularly in regard to the heightened need for global energy efficiency. In recent years, SSL has experienced remarkable advances in efficiency, light output magnitude and quality. Thus such diverse applications as signage, message centers, displays, and special lighting are now adopting LEDs, taking 2010's market to 9.1 billion - 68% growth from the previous year! While this is promising, future growth in both display and lighting applications will rely upon unveiling deeper understanding and key innovations in LED lighting science and technologies. In this presentation, some LED lighting fundamentals, engineering challenges and novel solutions will be discussed to address reduction in efficiency (a.k.a. droop) at high currents, and to obtain uniform light distribution for overcoming LEDs' directional nature. The droop phenomenon has been a subject of much controversy in the industry and despite several studies and claims, a widely-accepted explanation still lacks because of counter arguments and experiments. Recently several research studies have identified that the droop behavior in nitride-based LEDs beyond certain current density ranges can only be comprehensively explained if the current leaking beyond the LED active region is included. Although such studies have identified a few useful current leakage mechanisms outside the active region, no one has included current leakage, due to non-ideal, 3-D device structures that create undesirable current distribution inside and outside the active region. This talk will address achieving desirable current distributions from optimized 3-D device structures that should reduce current leakage and hence the droop behavior. In addition to novel LED design solutions for droop reduction and uniform light distribution, the talk will address cost and yield concerns as they pertain to core material scarcity. Such solutions are expected to make LED lights more energy efficient, pleasant in appearance, longer-lasting, affordable, and thus suitable for green living.

Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

NASA Astrophysics Data System (ADS)

Esakky, Papanasam; Kailath, Binsu J.

2017-08-01

HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

Timing, predictors, and progress of third space fluid accumulation during preliminary phase fluid resuscitation in adult patients with dengue.

PubMed

Premaratna, R; Ragupathy, A; Miththinda, J K N D; de Silva, H J

2013-07-01

Fluid leakage remains the hallmark of dengue hemorrhagic fever (DHF). The applicability of currently recommended predictors of DHF for adults with dengue is questionable as these are based on studies conducted in children. One hundred and two adults with dengue were prospectively followed up to investigate whether home-based or hospital-based early phase fluid resuscitation has an impact on clinical and hematological parameters used for the diagnosis of early or critical phase fluid leakage. In the majority of subjects, third space fluid accumulation (TSFA) was detected on the fifth and sixth days of infection. The quantity and quality of fluids administered played no role in TSFA. A reduction in systolic blood pressure appeared to be more helpful than a reduction in pulse pressure in predicting fluid leakage. TSFA occurred with lower percentage rises in packed cell volume (PCV) than stated in the current recommendations. A rapid reduction in platelets, progressive reduction in white blood cells, percentage rises in Haemoglobin (Hb), and PCV, and rises in aspartate aminotransferase and alanine aminotransferase were observed in patients with TSFA and therefore with the development of severe illness. Clinicians should be aware of the limitations of currently recommended predictors of DHF in adult patients who are receiving fluid resuscitation. Copyright © 2013 International Society for Infectious Diseases. Published by Elsevier Ltd. All rights reserved.

Fast switching thyristor applied in nanosecond-pulse high-voltage generator with closed transformer core.

PubMed

Li, Lee; Bao, Chaobing; Feng, Xibo; Liu, Yunlong; Fochan, Lin

2013-02-01

For a compact and reliable nanosecond-pulse high-voltage generator (NPHVG), the specification parameter selection and potential usage of fast controllable state-solid switches have an important bearing on the optimal design. The NPHVG with closed transformer core and fast switching thyristor (FST) was studied in this paper. According to the analysis of T-type circuit, the expressions for the voltages and currents of the primary and secondary windings on the transformer core of NPHVG were deduced, and the theoretical maximum analysis was performed. For NPHVG, the rise-rate of turn-on current (di/dt) across a FST may exceed its transient rating. Both mean and maximum values of di/dt were determined by the leakage inductances of the transformer, and the difference is 1.57 times. The optimum winding ratio is helpful to getting higher voltage output with lower specification FST, especially when the primary and secondary capacitances have been established. The oscillation period analysis can be effectively used to estimate the equivalent leakage inductance. When the core saturation effect was considered, the maximum di/dt estimated from the oscillating period of the primary current is more accurate than one from the oscillating period of the secondary voltage. Although increasing the leakage inductance of NPHVG can decrease di/dt across FST, it may reduce the output peak voltage of the NPHVG.

Tunable dielectric properties of Barium Magnesium Niobate (BMN) doped Barium Strontium Titanate (BST) thin films by magnetron sputtering

NASA Astrophysics Data System (ADS)

Alema, Fikadu; Reinholz, Aaron; Pokhodnya, Konstantin

2013-03-01

We report on the tunable dielectric properties of Mg and Nb co-doped Ba0.45Sr0.55TiO3 (BST) thin film prepared by the magnetron sputtering using BST target (pure and doped with BaMg0.33Nb0.67O3 (BMN)) on Pt/TiO2/SiO2/Al2O3 4'' wafers at 700 °C under oxygen atmosphere. The electrical measurements are conducted on 2432 metal-ferroelectric-metal capacitors using Pt as the top and bottom electrode. The crystalline structure, microstructure, and surface morphology of the films are analyzed and correlated to the films dielectric properties. The BMN doped and undoped BST films have shown tunabilities of 48% and 52%; and leakage current densities of 2.2x10-6 A/cm2 and 3.7x10-5 A/cm2, respectively at 0.5 MV/cm bias field. The results indicate that the BMN doped film exhibits a lower leakage current with no significant decrease in tunability. Due to similar electronegativity and ionic radii, it was suggested that both Mg2+ (accepter-type) and Nb5+ (donor-type) dopants substitutTi4+ ion in BST. The improvement in the film dielectric losses and leakage current with insignificant loss of tunability is attributed to the adversary effects of Mg2+ and Nb5+ in BST.

EVA Suit Microbial Leakage Investigation Project

NASA Technical Reports Server (NTRS)

Falker, Jay; Baker, Christopher; Clayton, Ronald; Rucker, Michelle

2016-01-01

The objective of this project is to collect microbial samples from various EVA suits to determine how much microbial contamination is typically released during simulated planetary exploration activities. Data will be released to the planetary protection and science communities, and advanced EVA system designers. In the best case scenario, we will discover that very little microbial contamination leaks from our current or prototype suit designs, in the worst case scenario, we will identify leak paths, learn more about what affects leakage--and we'll have a new, flight-certified swab tool for our EVA toolbox.

INVESTIGATION OF LEAKAGE CURRENT BEHAVIOR OF Pt/Bi0.975La0.025Fe0.975Ni0.025O3/Pt CAPACITOR MEASURED AT DIFFERENT TEMPERATURES

NASA Astrophysics Data System (ADS)

Dai, Xiu Hong; Zhao, Hong Dong; Zhang, Lei; Zhu, Hui Juan; Li, Xiao Hong; Zhao, Ya Jun; Guo, Jian Xin; Zhao, Qing Xun; Wang, Ying Long; Liu, Bao Ting; Ma, Lian Xi

2014-03-01

Polycrystalline Bi0.975La0.025Fe0.975Ni0.025O3 (BLFNO) film is fabricated on Pt/Ti/SiO2/Si(111) substrate by sol-gel method. It is found that the well-crystallized BLFNO film is polycrystalline, and the Pt/BLFNO/Pt capacitor possesses good ferroelectric properties with remnant polarization of 74 μC/cm2 at electric field of 833 kV/cm. Moreover, it is also found that the leakage current density of the Pt/BLFNO/Pt capacitor increases with the increase of measurement temperature ranging from 100 to 300 K. The leakage density of the Pt/BLFNO/Pt capacitor satisfies space-charge-limited conduction (SCLC) at higher electric field and shows little dependence on voltage polarity and temperature, but shows polarity and temperature dependence at lower applied electric field. With temperature increasing from 100 to 300 K at lower applied electric field, the most likely conduction mechanism is from Ohmic behavior to SCLC for positive biases, but no clear dominant mechanism for negative biases is shown.

Study on the dielectric properties of Al2O3/TiO2 sub-nanometric laminates: effect of the bottom electrode and the total thickness

NASA Astrophysics Data System (ADS)

Ben Elbahri, M.; Kahouli, A.; Mercey, B.; Lebedev, O.; Donner, W.; Lüders, U.

2018-02-01

Dielectrics based on amorphous sub-nanometric laminates of TiO2 and Al2O3 are subject to elevated dielectric losses and leakage currents, in large parts due to the extremely thin individual layer thickness chosen for the creation of the Maxwell-Wagner relaxation and therefore the high apparent dielectric constants. The optimization of performances of the laminate itself being strongly limited by this contradiction concerning its internal structure, we will show in this study that modifications of the dielectric stack of capacitors based on these sub-nanometric laminates can positively influence the dielectric losses and the leakage, as for example the nature of the electrodes, the introduction of thick insulating layers at the laminate/electrode interfaces and the modification of the total laminate thickness. The optimization of the dielectric stack leads to the demonstration of a capacitor with an apparent dielectric constant of 90, combined with low dielectric loss (tan δ) of 7 · 10-2 and with leakage currents smaller than 1  ×  10-6 A cm-2 at 10 MV m-1.

Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis

NASA Astrophysics Data System (ADS)

Nagata, Takahiro; Suzuki, Yoshihisa; Yamashita, Yoshiyuki; Ogura, Atsushi; Chikyow, Toyohiro

2018-04-01

The effects of Sn and Mg doping of a TiO2 film on a Ge substrate were investigated to improve leakage current properties and Ge diffusion into the TiO2 film. For systematic analysis, dopant-composition-spread TiO2 samples with dopant concentrations of up to 20.0 at. % were fabricated by RF sputtering and a combinatorial method. X-ray photoelectron spectroscopy revealed that the instability of Mg doping of TiO2 at dopant concentrations above 10.5 at. %. Both Sn and Mg dopants reduced Ge diffusion into TiO2. Sn doping enhanced the crystallization of the rutile phase, which is a high-dielectric-constant phase, although the Mg-doped TiO2 film indicated an amorphous structure. Sn-doping indicated systematic leakage current reduction with increasing dopant concentration. Doping at Sn concentrations higher than 16.8 at. % improved the leakage properties (˜10-7 A/cm2 at -3.0 V) and capacitance-voltage properties of metal-insulator-semiconductor (MIS) operation. The Sn doping of TiO2 may be useful for interface control and as a dielectric material for Ge-based MIS capacitors.

Charging and breakdown in amorphous dielectrics: Phenomenological modeling approach and applications

NASA Astrophysics Data System (ADS)

Palit, Sambit

Amorphous dielectrics of different thicknesses (nm to mm) are used in various applications. Low temperature processing/deposition of amorphous thin-film dielectrics often result in defect-states or electronic traps. These traps are responsible for increased leakage currents and bulk charge trapping in many associated applications. Additional defects may be generated during regular usage, leading to electrical breakdown. Increased leakage currents, charge trapping and defect generation/breakdown are important and pervasive reliability concerns in amorphous dielectrics. We first explore the issue of charge accumulation and leakage in amorphous dielectrics. Historically, charge transport in amorphous dielectrics has been presumed, depending on the dielectric thickness, to be either bulk dominated (Frenkel-Poole (FP) emission) or contact dominated (Fowler-Nordheim tunneling). We develop a comprehensive dielectric charging modeling framework which solves for the transient and steady state charge accumulation and leakage currents in an amorphous dielectric, and show that for intermediate thickness dielectrics, the conventional assumption of FP dominated current transport is incorrect, and may lead to false extraction of dielectric parameters. We propose an improved dielectric characterization methodology based on an analytical approximation of our model. Coupled with ab-initio computed defect levels, the dielectric charging model explains measured leakage currents more accurately with lesser empiricism. We study RF-MEMS capacitive switches as one of the target applications of intermediate thickness amorphous dielectrics. To achieve faster analysis and design of RF-MEMS switches in particular, and electro-mechanical actuators in general, we propose a set of fundamental scaling relationships which are independent of specific physical dimensions and material properties; the scaling relationships provide an intrinsic classification of all electro-mechanical actuators. However, RF-MEMS capacitive switches are plagued by the reliability issue of temporal shifts of actuation voltages due to dielectric charge accumulation, often resulting in failure due to membrane stiction. Using the dielectric charging model, we show that in spite of unpredictable roughness of deposited dielectrics, there are predictable shifts in actuation voltages due to dielectric charging in RF-MEMS switches. We also propose a novel non-obtrusive, non-contact, fully electronic resonance based technique to characterize charging driven actuation shifts in RF-MEMS switches which overcomes limitations in conventionally used methods. Finally, we look into the issue of defect generation and breakdown in thick polymer dielectrics. Polymer materials often face premature electrical breakdown due to high electric fields and frequencies, and exposure to ambient humidity conditions. Using a field-driven correlated defect generation model, coupled with a model for temperature rise due to dielectric heating at AC stresses, we explain measured trends in time-to-breakdown and breakdown electric fields in polymer materials. Using dielectric heating we are able to explain the observed lifetime and dielectric strength reduction with increasing dielectric thicknesses. Performing lifetime measurements after exposure to controlled humidity conditions, we find that moisture ingress into a polymer material reduces activation barriers for chain breakage and increases dielectric heating. Overall, this thesis develops a comprehensive framework of dielectric charging, leakage and degradation of insulators of different thicknesses that have broad applications in multiple technologies.

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

NASA Astrophysics Data System (ADS)

Hamachi, T.; Takeuchi, S.; Tohei, T.; Imanishi, M.; Imade, M.; Mori, Y.; Sakai, A.

2018-04-01

The mechanisms associated with electrical conduction through individual threading dislocations (TDs) in a Na-flux GaN crystal grown with a multipoint-seed-GaN technique were investigated by conductive atomic force microscopy (C-AFM). To focus on individual TDs, dislocation-related etch pits (DREPs) were formed on the Na-flux GaN surface by wet chemical etching, after which microscopic Pt electrodes were locally fabricated on the DREPs to form conformal contacts to the Na-flux GaN crystal, using electron beam assisted deposition. The C-AFM data clearly demonstrate that the leakage current flows through the individual TD sites. It is also evident that the leakage current and the electrical conduction mechanism vary significantly based on the area within the Na-flux GaN crystal where the TDs are formed. These regions include the c-growth sector (cGS) in which the GaN grows in the [0001 ] direction on top of the point-seed with a c-plane growth front, the facet-growth sector (FGS) in which the GaN grows with {10 1 ¯ 1 } facets on the side of the cGS, the boundary region between the cGS and FGS (BR), and the coalescence boundary region between FGSs (CBR). The local current-voltage (I-V) characteristics of the specimen demonstrate space charge limited current conduction and conduction related to band-like trap states associated with TDs in the FGS, BR, and CBR. A detailed analysis of the I-V data indicates that the electrical conduction through TDs in the cGS may proceed via the Poole-Frenkel emission mechanism.

Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

PubMed Central

Abidin, Mastura Shafinaz Zainal; Hashim, Abdul Manaf; Sharifabad, Maneea Eizadi; Rahman, Shaharin Fadzli Abd; Sadoh, Taizoh

2011-01-01

The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V) characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications. PMID:22163786

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Meng; Zhao, Yuning; Yan, Xiaodong

2015-12-07

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

Evaluation of eddy current and magnetic techniques for inspecting rebars in bridge barrier rails

NASA Astrophysics Data System (ADS)

Lo, C. C. H.; Nakagawa, N.

2013-01-01

This paper reports on a feasibility study of using eddy current (EC) and magnetic flux leakage (MFL) methods to detect corrosion damage in rebars that anchor concrete barrier rails to the road deck of bridge structures. EC and MFL measurements were carried out on standalone rebars with and without artificial defects of 25% and 50% material loss, using a commercial EC-based rebar locator and a MFL system that was developed using giant magnetoresistance sensors to detect leakage fluxes from the defects. Both techniques can readily detect the defects at a distance of 2.5″ (63.5 mm). The amplitudes of the EC and MFL signals vary monotonically with the amount of material loss, indicating the potential of using the techniques to quantify material loss of standalone rebars.

Pinhole mediated electrical transport across LaTiO3/SrTiO3 and LaAlO3/SrTiO3 oxide hetero-structures

NASA Astrophysics Data System (ADS)

Kumar, Pramod; Dogra, Anjana; Toutam, Vijaykumar

2013-11-01

Metal-insulator-metal configuration of LaTiO3/SrTiO3 and LaAlO3/SrTiO3 hetero-structures between two dimensional electron gas formed at the interface and different area top electrodes is employed for Conductive Atomic force microscopy (CAFM) imaging, Current-Voltage (I-V), and Capacitance-Voltage (C-V) spectroscopy. Electrode area dependent I-V characteristics are observed for these oxide hetero-structures. With small area electrodes, rectifying I-V characteristics are observed, compared to, both tunneling and leakage current characteristics for large area electrodes. CAFM mapping confirmed the presence of pinholes on both surfaces. Resultant I-V characteristics have a contribution from both tunneling and leakage due to pinholes.

Effect of threading defects on InGaN /GaN multiple quantum well light emitting diodes

NASA Astrophysics Data System (ADS)

Ferdous, M. S.; Wang, X.; Fairchild, M. N.; Hersee, S. D.

2007-12-01

Photoelectrochemical etching was used to measure the threading defect (TD) density in InGaN multiple quantum well light-emitting diodes (LEDs) fabricated from commercial quality epitaxial wafers. The TD density was measured in the LED active region and then correlated with the previously measured characteristics of these LEDs. It was found that the reverse leakage current increased exponentially with TD density. The temperature dependence of this dislocation-related leakage current was consistent with a hopping mechanism at low reverse-bias voltage and Poole-Frenkel emission at higher reverse-bias voltage. The peak intensity and spectral width of the LED electroluminescence were found to be only weakly dependent on TD density for the measured TD range of 1×107-2×108cm-2.

Schottky barrier diode and method thereof

NASA Technical Reports Server (NTRS)

Aslam, Shahid (Inventor); Franz, David (Inventor)

2008-01-01

Pt/n.sup.-GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n.sup.-GaN Schottky barrier diodes have very large active areas, up to 1 cm.sup.2, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n.sup.-GaN Schottky diodes of sizes 0.25 cm.sup.2 and 1 cm.sup.2 have been fabricated from n.sup.-/n.sup.+ GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm.sup.2 and 1 cm.sup.2 diodes both configured at a 0.5V reverse bias.

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Schwartz, Zachary D.; Alterovitz, Samuel A.; Downey, Alan N.

2004-01-01

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

Water permeation and electrical properties of pottants, backings, and pottant/backing composites

NASA Technical Reports Server (NTRS)

Orehotsky, J.

1986-01-01

It is reported that the interface between plastic film back covers and ethylene vinyl acetates (EVA) or polyvinyl butyral (PVB) in photovoltaic modules can influence water permeation, and electrial properties of the composites such as leakage current and dielectric constant. The interface can either be one of two dissimilar materials in physical contact with no intermixing, or the interface can constitute a thin zone which is an interphase of the two materials having a gradient composition from one material to the other. The former condition is described as a discrete interface. A discrete interface model was developed to predict water permeation, dielectric strength, and leakage current for EVA, ethylene methyl acrylate (EMA), and PVB coupled to Tedlar and mylar films. Experimental data was compared with predicted data.

Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Lee, Yong Hee; Joo, Seung Ki

2017-06-01

Low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated via metal-induced crystallization (MIC) are attractive candidates for use in active-matrix flat-panel displays. However, these exhibit a large leakage current due to the nickel silicide being trapped at the grain boundaries of the poly-Si. We reduced the leakage current of the MIC poly-Si TFTs by developing a gettering method to remove the Ni impurities using a Si getter layer and natively-formed SiO2 as the etch stop interlayer. The Ni trap state density (Nt) in the MIC poly-Si film decreased after the Ni silicide gettering, and as a result, the leakage current of the MIC poly-Si TFTs decreased. Furthermore, the leakage current of MIC poly-Si TFTs gradually decreased with additional gettering. To explain the gettering effect on MIC poly-Si TFTs, we suggest an appropriate model. He received the B.S. degree in School of Advanced Materials Engineering from Kookmin University, Seoul, South Korea in 2012, and the M.S. degree in Department of Materials Science and Engineering from Seoul National University, Seoul, South Korea in 2014. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and top-gate polycrystalline-silicon thin-film transistors. He received the M.S. degree in innovation technology from Ecol Polytechnique, Palaiseau, France in 2013. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and copper-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He received the B.S. degree in metallurgical engineering from Seoul National University, Seoul, South Korea, in 1974, and the M.S. and Ph.D. degrees in material science and engineering from Stanford University, Stanford, CA, USA, in 1980 and 1983, respectively. He is currently a Professor with the Department of Materials Science and Engineering, Seoul National University, Seoul.

Physiological responses of Kobresia pygmaea to warming in Qinghai-Tibetan Plateau permafrost region

NASA Astrophysics Data System (ADS)

Yang, Y.; Wang, G. X.; Yang, L. D.; Guo, J. Y.; Li, N.

2012-02-01

Kobresia pygmaea (C. B. Clarke) C. B. Clarke is one dominant herbaceous species in the alpine meadows of the Qinghai-Tibetan Plateau. From 2006 to 2009, a warming experiment was conducted in this permafrost region. Two 2-year warming treatments with an annual average warming of 2.1 °C and 4.4 °C, and one 4-year warming treatment with an annual average warming of 2.3 °C were established to examine physiological responses of K. pygmaea to warming. Our results indicated that 2-years of warming increased malondialdehyde and non-structural carbohydrates in the plants. There was no effect of 2-year warming on electrolyte leakage and free proline content. In the 2-year warming treatment, superoxide dismutase activity and peroxidase activity increased, ascorbate peroxidase activity and ascorbic acid only increased in 2-year high warming treatment, whereas in the 4-year warming treatment, active oxygen species, electrolyte leakage, UV-absorbing compounds and anthocyanins decreased. The 4-year warming treatment also significantly increased non-structural carbonhydrate and free proline accumulation for osmotic adjustment. The results of this study suggest that K. pygmaea could adapt to a warmer environment in the future.

Beta-phenylethylamine inhibits K+ currents in neocortical neurons of the rat: a possible mechanism of beta-phenylethylamine-induced seizures.

PubMed

Kitamura, Taro; Munakata, Mitsutoshi; Haginoya, Kazuhiro; Tsuchiya, Shigeru; Iinuma, Kazuie

2008-08-01

beta-Phenylethylamine (beta-PEA), an endogenous amine synthesized in the brain, serves as a neuromodulator and is involved in the pathophysiology of various neurological disorders such as depression, schizophrenia, and attention-deficit hyperactivity disorder. beta-PEA fully exerts the physiological effects within the nanomolar concentration range via the trace amine receptors, but beta-PEA also causes convulsions at much higher concentrations via an as yet unknown mechanism. To investigate the electrophysiological mechanism by which beta-PEA induces convulsions, we examined the effect of beta-PEA on ionic currents passing through the cell membrane of dissociated rat cerebral cortical neurons, using a patch-clamp technique. The external application of beta-PEA suppressed ionic currents which continuously flowed when the membrane potential was held at -25 mV. The suppression was in a concentration-dependent manner and a half-maximal effective concentration was 540 muM. These currents suppressed by beta-PEA consisted of two K(+) currents: a time- and voltage-dependent K(+) current (M-current) and a leakage K(+) current. The suppression of the M-current reduces the efficacy of the current in limiting excessive neuronal firing, and the suppression of the leakage K(+) current can cause membrane depolarization and thus promote neuronal excitation. Reducing both of these currents in concert may produce neuronal seizing activity, which could conceivably underlie the convulsions induced by high-dose beta-PEA.

Key factors for determining groundwater impacts due to leakage from geologic carbon sequestration reservoirs

DOE PAGES

Carroll, Susan A.; Keating, Elizabeth; Mansoor, Kayyum; ...

2014-09-07

The National Risk Assessment Partnership (NRAP) is developing a science-based toolset for the analysis of potential impacts to groundwater chemistry from CO 2 injection (www.netldoe.gov/nrap). The toolset adopts a stochastic approach in which predictions address uncertainties in shallow groundwater and leakage scenarios. It is derived from detailed physics and chemistry simulation results that are used to train more computationally efficient models, referred to here as reduced-order models (ROMs), for each component system. In particular, these tools can be used to help regulators and operators understand the expected sizes and longevity of plumes in pH, TDS, and dissolved metals that couldmore » result from a leakage of brine and/or CO 2 from a storage reservoir into aquifers. This information can inform, for example, decisions on monitoring strategies that are both effective and efficient. We have used this approach to develop predictive reduced-order models for two common types of reservoirs, but the approach could be used to develop a model for a specific aquifer or other common types of aquifers. In this paper we describe potential impacts to groundwater quality due to CO 2 and brine leakage, discuss an approach to calculate thresholds under which no impact to groundwater occurs, describe the time scale for impact on groundwater, and discuss the probability of detecting a groundwater plume should leakage occur. To facilitate this, multi-phase flow and reactive transport simulations and emulations were developed for two classes of aquifers, considering uncertainty in leakage source terms and aquifer hydrogeology. We targeted an unconfined fractured carbonate aquifer based on the Edwards aquifer in Texas and a confined alluvium aquifer based on the High Plains Aquifer in Kansas, which share characteristics typical of many drinking water aquifers in the United States. The hypothetical leakage scenarios centered on the notion that wellbores are the most likely conduits for brine and CO 2 leaks. Leakage uncertainty was based on hypothetical injection of CO 2 for 50 years at a rate of 5 million tons per year into a depleted oil/gas reservoir with high permeability and, one or more wells provided leakage pathways from the storage reservoir to the overlying aquifer. This scenario corresponds to a storage site with historical oil/gas production and some poorly completed legacy wells that went undetected through site evaluation, operations, and post-closure. For the aquifer systems and leakage scenarios studied here, CO 2 and brine leakage are likely to drive pH below and increase total dissolved solids (TDS) above the “no-impact thresholds;” and the subsequent plumes, although small, are likely to persist for long periods of time in the absence of remediation. In these scenarios, however, risk to human health may not be significant for two reasons. First, our simulated plume volumes are much smaller than the average inter-well spacing for these representative aquifers, so the impacted groundwater would be unlikely to be pumped for drinking water. Second, even within the impacted plume volumes little water exceeds the primary maximum contamination levels.« less

Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-09-01

We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

Lowering Whole-Body Radiation Doses in Pediatric Intensity-Modulated Radiotherapy Through the Use of Unflattened Photon Beams;Flattening filter; Pediatric; Intensity-modulated radiotherapy; Second cancers; Radiation-induced malignancies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cashmore, Jason, E-mail: Jason.cashmore@uhb.nhs.uk; Ramtohul, Mark; Ford, Dan

Purpose: Intensity modulated radiotherapy (IMRT) has been linked with an increased risk of secondary cancer induction due to the extra leakage radiation associated with delivery of these techniques. Removal of the flattening filter offers a simple way of reducing head leakage, and it may be possible to generate equivalent IMRT plans and to deliver these on a standard linear accelerator operating in unflattened mode. Methods and Materials: An Elekta Precise linear accelerator has been commissioned to operate in both conventional and unflattened modes (energy matched at 6 MV) and a direct comparison made between the treatment planning and delivery ofmore » pediatric intracranial treatments using both approaches. These plans have been evaluated and delivered to an anthropomorphic phantom. Results: Plans generated in unflattened mode are clinically identical to those for conventional IMRT but can be delivered with greatly reduced leakage radiation. Measurements in an anthropomorphic phantom at clinically relevant positions including the thyroid, lung, ovaries, and testes show an average reduction in peripheral doses of 23.7%, 29.9%, 64.9%, and 70.0%, respectively, for identical plan delivery compared to conventional IMRT. Conclusions: IMRT delivery in unflattened mode removes an unwanted and unnecessary source of scatter from the treatment head and lowers leakage doses by up to 70%, thereby reducing the risk of radiation-induced second cancers. Removal of the flattening filter is recommended for IMRT treatments.« less

Geological and geophysical investigation of water leakage from two micro-dam reservoirs: Implications for future site selection, northern Ethiopia

NASA Astrophysics Data System (ADS)

Berhane, Gebremedhin; Amare, Mogos; Gebreyohannes, Tesfamichael; Walraevens, Kristine

2017-05-01

Water resources are essential to human development activities and to eradicate extreme poverty and hunger. Geological problems of two water harvesting Micro-Dam Reservoirs (MDRs) were evaluated from leakage perspectives in the northern part of Ethiopia, East Africa. Conventional geological mapping, discontinuity and weathering descriptions, test pits and geophysical methods were used to characterize the hydrogeological features of the MDRs. Vertical Electrical Sounding (VES) and Electrical Profiling (EP), were executed using Terrameter SAS (signal averaging system) 1000 manufactured by ABEM, Sweden, with Schlumberger and Wenner array configuration respectively. It was concluded that the foundations of both MDRs, except the right abutment for Adishuhu which is partly composed of dolerite, are pervious due to the presence of thin bedding planes, joints, weathered materials and fault. The presence of water in the downstream toe of the MDRs, at depressions, existing test pits and test pits excavated during the present study which lie within the seepage zone demarcated during surface geological mapping, correspond with the electrical resistivity study. The results of the electrical resistivity survey (EP and VES) were merged with the geological and structural mapping and the observation of seepage zones, for the delineation of weak zones responsible for leakage. Monitoring of the leakage (reservoir water and groundwater levels), both manually and using automatic divers, is recommended, along with monitoring of the stability of the embankments and the discharge or flow downstream of the MDRs.

Transmastoid approach to temporal bone cerebrospinal fluid leaks.

PubMed

Oliaei, Sepehr; Mahboubi, Hossein; Djalilian, Hamid R

2012-01-01

The aim of the study was to evaluate various presentations and treatment options for spontaneous cerebrospinal fluid (CSF) leakage originating in the temporal bone. Clinical data and imaging results for 18 ears (15 patients) presenting with spontaneous CSF leakage originating in the temporal bone were reviewed. Average follow-up period was 13.5 months. The main outcome measure was presence of persistent CSF leak postoperatively. A standard postauricular mastoidectomy was performed. Fifteen patients diagnosed with spontaneous CSF leakage over an 8-year period including 3 treated for bilateral disease were included in the study. The age ranged between 33 and 83 years. Presenting symptoms included serous otitis media (44%), persistent otorrhea after tympanostomy tube placement (28%), and meningitis (28%). Preoperative diagnosis was made using imaging studies and was substantiated by observation of CSF leakage and dural herniation intraoperatively. Treatment was eustachian tube plugging (5%), mastoidectomy with fat obliteration (61%), middle fossa approach with extradural (17%), intradural repair (5%), or combined middle fossa and transmastoid (TM) approach (11%). Successful treatment was obtained in 17 of the 18 cases. The last 9 patients in the series underwent TM approach alone for repair with no treatment failures. Repair of defects in tegmen mastoideum and posterior fossa can be successfully achieved on an outpatient basis without regard to size and multitude of defects via TM approach. This approach obviates the need for a craniotomy or lumbar drain. Copyright © 2012 Elsevier Inc. All rights reserved.

External biliary drainage following major liver resection for perihilar cholangiocarcinoma: impact on development of liver failure and biliary leakage

PubMed Central

Olthof, Pim B.; Coelen, Robert J.S.; Wiggers, Jimme K.; Besselink, Marc G.H.; Busch, Olivier R.C.; van Gulik, Thomas M.

2016-01-01

Background Preoperative biliary drainage is considered essential in perihilar cholangiocarcinoma (PHC) requiring major hepatectomy with biliary-enteric reconstruction. However, evidence for postoperative biliary drainage as to protect the anastomosis is currently lacking. This study investigated the impact of postoperative external biliary drainage on the development of post-hepatectomy biliary leakage and liver failure (PHLF). Methods All patients who underwent major liver resection for suspected PHC between 2000 and 2015 were retrospectively analyzed. Biliary leakage and PHLF was defined as grade B or higher according to the International Study Group of Liver Surgery (ISGLS) criteria. Results Eighty-nine out of 125 (71%) patients had postoperative external biliary drainage. PHLF was more prevalent in the drain group (29% versus 6%; P = 0.004). There was no difference in the incidence of biliary leakage (32% versus 36%). On multivariable analysis, postoperative external biliary drainage was identified as an independent risk factor for PHLF (Odds-ratio 10.3, 95% confidence interval 2.1–50.4; P = 0.004). Conclusions External biliary drainage following major hepatectomy for PHC was associated with an increased incidence of PHLF. It is therefore not recommended to routinely use postoperative external biliary drainage, especially as there is no evidence that this decreases the risk of biliary anastomotic leakage. PMID:27037204

Evaluation of ground-water flow and solute transport in the Lompoc area, Santa Barbara County, California

USGS Publications Warehouse

Bright, Daniel J.; Nash, David B.; Martin, Peter

1997-01-01

Ground-water quality in the Lompoc area, especially in the Lompoc plain, is only marginally acceptable for most uses. Demand for ground water has increased for municipal use since the late 1950's and has continued to be high for irrigation on the Lompoc plain, the principal agricultural area in the Santa Ynez River basin. As use has increased, the quality of ground water has deteriorated in some areas of the Lompoc plain. The dissolved-solids concentration in the main zone of the upper aquifer beneath most of the central and western plains has increased from less than 1,000 milligrams per liter in the 1940's to greater than 2,000 milligrams per liter in the 1960's. Dissolved- solids concentration have remained relatively constant since the 1960's. A three-dimensional finite-difference model was used to simulate ground-water flow in the Lompoc area and a two-dimensional finite-element model was used to simulate solute transport to gain a better understanding of the ground-water system and to evaluate the effects of proposed management plans for the ground-water basin. The aquifer system was simulated in the flow model as four horizontal layers. In the area of the Lompoc plain, the layers represent the shallow, middle, and main zones of the upper aquifer, and the lower aquifer. For the Lompoc upland and Lompoc terrace, the four layers represent the lower aquifer. The solute transport model was used to simulate dissolved-solids transport in the main zone of the upper aquifer beneath the Lompoc plain. The flow and solute-transport models were calibrated to transient conditions for 1941-88. A steady-state simulation was made to provide initial conditions for the transient-state simulation by using long-term average (1941-88) recharge rates. Model- simulated hydraulic heads generally were within 5 feet of measured heads in the main zone for transient conditions. Model-simulated dissolved- solids concentrations for the main zone generally differed less than 200milligrams per liter from concentrations in 1988. During 1941-88 about 1,096,000 acre-feet of water was pumped from the aquifer system. Average pumpage for this period (22,830 acre-feet per year) exceeded pumpage for the steady-state simulation by 16,590 acre-feet per year. The results of the transient simulation indicate that about 60 percent of this increase in pumpage was contributed by increased recharge, 28 percent by decreased natural discharge from the system (primarily discharge to the Santa Ynez River and transpiration), and 13 percent was withdrawn from storage. Total simulated downward leakage from the middle zone to the main zone in the central plain and upward leakage from the consolidated rocks to the main zone significantly increased in response to increased pumpage, which increased from about 6,240 to 30,870 acre-feet per year from 1941 to 1988. Average dissolved-solid concentration in the middle zone in 1987-88 ranged from 2,000 to 3,000 milligrams per liter beneath the northeastern plain and the dissolved-solids concentration of two samples from the consolidated rocks beneath the western plain averaged 4,300 milligrams per liter. Because the dissolved-solids concentration for the middle zone and the consolidated rocks is higher than the simulated steady-state dissolved-solids concentration of the main zone, the increase in the leakage from these two sources resulted in increased dissolved-solids concentration in the main zone during the transient period. The model results indicate that the main source of increased dissolved- solids concentration in the northeastern and central plains was downward leakage from the middle zone; whereas, upward leakage from the consolidated rocks was the main source of the increased dissolved-solids concentrations in the northwestern and western plains. The models were used to estimate changes in hydraulic head and in dissolved-solids concentration resulting from three proposed management alternatives: (1) average recharge

Reducing leakage current in semiconductor devices

DOEpatents

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

2018-03-06

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

Hydrogeology and ground-water flow in the Memphis and Fort Pillow aquifers in the Memphis area, Tennessee

USGS Publications Warehouse

Brahana, J.V.; Broshears, R.E.

2001-01-01

On the basis of known hydrogeology of the Memphis and Fort Pillow aquifers in the Memphis area, a three-layer, finite-difference numerical model was constructed and calibrated as the primary tool to refine understanding of flow in the aquifers. The model was calibrated and tested for accuracy in simulating measured heads for nine periods of transient flow from 1886-1985. Testing and sensitivity analyses indicated that the model accurately simulated observed heads areally as well as through time. The study indicates that the flow system is currently dominated by the distribution of pumping in relation to the distribution of areally variable confining units. Current withdrawal of about 200 million gallons per day has altered the prepumping flow paths, and effectively captured most of the water flowing through the aquifers. Ground-water flow is controlled by the altitude and location of sources of recharge and discharge, and by the hydraulic characteristics of the hydrogeologic units. Leakage between the Fort Pillow aquifer and Memphis aquifer, and between the Memphis aquifer and the water-table aquifers (alluvium and fluvial deposits) is a major component of the hydrologic budget. The study indicates that more than 50 percent of the water withdrawn from the Memphis aquifer in 1980 is derived from vertical leakage across confining units, and the leakage from the shallow aquifer (potential source of contamination) is not uniformly distributed. Simulated leakage was concentrated along the upper reaches of the Wolf and Loosahatchie Rivers, along the upper reaches of Nonconnah Creek, and the surficial aquifer of the Mississippi River alluvial plain. These simulations are supported by the geologic and geophysical evidence suggesting relatively thin or sandy confining units in these general locations. Because water from surficial aquifers is inferior in quality and more susceptible to contamination than water in the deeper aquifers, high rates of leakage to the Memphis aquifer may be cause for concern. A significant component of flow (12 percent) discharging from the Fort Pillow aquifer was calculated as upward leakage to the Memphis aquifer. This upward leakage was generally limited to areas near major pumping centers in the Memphis aquifer, where heads in the Memphis aquifer have been drawn significantly below heads in the Fort Pillow aquifer. Although the Fort Pillow aquifer is not capable of producing as much water as the Memphis aquifer for similar conditions, it is nonetheless a valuable resource throughout the area.

Large-Eddy Simulation of Crashback in a Ducted Propulsor

NASA Astrophysics Data System (ADS)

Jang, Hyunchul; Mahesh, Krishnan

2011-11-01

Crashback is an operating condition to quickly stop a propelled vehicle, where the propeller is rotated in the reverse direction to yield negative thrust. The crashback condition is dominated by the interaction of free stream flow with strong reverse flow. Crashback causes highly unsteady loads and flow separation on blade surface. This study uses Large-Eddy Simulation to predict the highly unsteady flow field in crashback for a ducted propulsor. Thrust mostly arises from the blade surface, but most of side-force is generated from the duct surface. Both mean and RMS of pressure are much higher on inner surface of duct, especially near blade tips. This implies that side-force on the ducted propulsor is caused by the blade-duct interaction. Strong tip leakage flow is observed behind the suction side at the tip gap. The physical source of the tip leakage flow is seen to be the large pressure difference between pressure and suction sides. The conditional average during high amplitude event shows that the tip leakage flow and pressure difference are significantly higher. This work is supported by the United States Office of Naval Research under ONR Grant N00014-05-1-0003.

Three-dimensional analysis of the Pratt and Whitney alternate design SSME fuel turbine

NASA Technical Reports Server (NTRS)

Kirtley, K. R.; Beach, T. A.; Adamczyk, J. J.

1991-01-01

The three dimensional viscous time-mean flow in the Pratt and Whitney alternate design space shuttle main engine fuel turbine is simulated using the average passage Navier-Stokes equations. The migration of secondary flows generated by upstream blade rows and their effect on the performance of downstream blade rows is studied. The present simulation confirms that the flow in this two stage turbine is highly three dimensional and dominated by the tip leakage flow. The tip leakage vortex generated by the first blade persists through the second blade and adversely affects its performance. The greatest mixing of the inlet total temperature distortion occurs in the second vane and is due to the large leakage vortex generated by the upstream rotor. It is assumed that the predominant spanwise mixing mechanism in this low aspect ratio turbine is the radial transport due to the deterministically unsteady vortical flow generated by upstream blade rows. A by-product of the analysis is accurate pressure and heat loads for all blade rows under the influence of neighboring blade rows. These aero loads are useful for advanced structural analysis of the vanes and blades.

Short-term effects of CO2 leakage on the soil bacterial community in a simulated gas leakage scenario.

PubMed

Ma, Jing; Zhang, Wangyuan; Zhang, Shaoliang; Zhu, Qianlin; Feng, Qiyan; Chen, Fu

2017-01-01

The technology of carbon dioxide (CO 2 ) capture and storage (CCS) has provided a new option for mitigating global anthropogenic emissions with unique advantages. However, the potential risk of gas leakage from CO 2 sequestration and utilization processes has attracted considerable attention. Moreover, leakage might threaten soil ecosystems and thus cannot be ignored. In this study, a simulation experiment of leakage from CO 2 geological storage was designed to investigate the short-term effects of different CO 2 leakage concentration (from 400 g m -2 day -1 to 2,000 g m -2 day -1 ) on soil bacterial communities. A shunt device and adjustable flow meter were used to control the amount of CO 2 injected into the soil. Comparisons were made between soil physicochemical properties, soil enzyme activities, and microbial community diversity before and after injecting different CO 2 concentrations. Increasing CO 2 concentration decreased the soil pH, and the largest variation ranged from 8.15 to 7.29 ( p < 0.05). Nitrate nitrogen content varied from 1.01 to 4.03 mg/Kg, while Olsen-phosphorus and total phosphorus demonstrated less regular downtrends. The fluorescein diacetate (FDA) hydrolytic enzyme activity was inhibited by the increasing CO 2 flux, with the average content varying from 22.69 to 11.25 mg/(Kg h) ( p < 0.05). However, the increasing activity amplitude of the polyphenol oxidase enzyme approached 230%, while the urease activity presented a similar rising trend. Alpha diversity results showed that the Shannon index decreased from 7.66 ± 0.13 to 5.23 ± 0.35 as the soil CO 2 concentration increased. The dominant phylum in the soil samples was Proteobacteria , whose proportion rose rapidly from 28.85% to 67.93%. In addition, the proportion of Acidobacteria decreased from 19.64% to 9.29% ( p < 0.01). Moreover, the abundances of genera Methylophilus , Methylobacillus , and Methylovorus increased, while GP4 , GP6 and GP7 decreased. Canonical correlation analysis results suggested that there was a correlation between the abundance variation of Proteobacteria , Acidobacteria , and the increasing nitrate nitrogen, urease and polyphenol oxidase enzyme activities, as well as the decreasing FDA hydrolytic enzyme activity, Olsen-phosphorus and total phosphorus contents. These results might be useful for evaluating the risk of potential CO 2 leakages on soil ecosystems.

Dry etching, surface passivation and capping processes for antimonide based photodetectors

NASA Astrophysics Data System (ADS)

Dutta, Partha; Langer, Jeffery; Bhagwat, Vinay; Juneja, Jasbir

2005-05-01

III-V antimonide based devices suffer from leakage currents. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of antimonide based devices. The quest for a suitable surface passivation technology is still on. In this paper, we will present some of the promising recent developments in this area based on dry etching of GaSb based homojunction photodiodes structures followed by various passivation and capping schemes. We have developed a damage-free, universal dry etching recipe based on unique ratios of Cl2/BCl3/CH4/Ar/H2 in ECR plasma. This novel dry plasma process etches all III-V compounds at different rates with minimal damage to the side walls. In GaSb based photodiodes, an order of magnitude lower leakage current, improved ideality factor and higher responsivity has been demonstrated using this recipe compared to widely used Cl2/Ar and wet chemical etch recipes. The dynamic zero bias resistance-area product of the Cl2/BCl3/CH4/Ar/H2 etched diodes (830 Ω cm2) is higher than the Cl2/Ar (300 Ω cm2) and wet etched (330 Ω cm2) diodes. Ammonium sulfide has been known to passivate surfaces of III-V compounds. In GaSb photodiodes, the leakage current density reduces by a factor of 3 upon sulfur passivation using ammonium sulfide. However, device performance degrades over a period of time in the absence of any capping or protective layer. Silicon Nitride has been used as a cap layer by various researchers. We have found that by using silicon nitride caps, the devices exhibit higher leakage than unpassivated devices probably due to plasma damage during SiNx deposition. We have experimented with various polymers for capping material. It has been observed that ammonium sulfide passivation when combined with parylene capping layer (150 Å), devices retain their improved performance for over 4 months.

Evaluation of Information Leakage from Cryptographic Hardware via Common-Mode Current

NASA Astrophysics Data System (ADS)

Hayashi, Yu-Ichi; Homma, Naofumi; Mizuki, Takaaki; Sugawara, Takeshi; Kayano, Yoshiki; Aoki, Takafumi; Minegishi, Shigeki; Satoh, Akashi; Sone, Hideaki; Inoue, Hiroshi

This paper presents a possibility of Electromagnetic (EM) analysis against cryptographic modules outside their security boundaries. The mechanism behind the information leakage is explained from the view point of Electromagnetic Compatibility: electric fluctuation released from cryptographic modules can conduct to peripheral circuits based on ground bounce, resulting in radiation. We demonstrate the consequence of the mechanism through experiments where the ISO/IEC standard block cipher AES (Advanced Encryption Standard) is implemented on an FPGA board and EM radiations from power and communication cables are measured. Correlation Electromagnetic Analysis (CEMA) is conducted in order to evaluate the information leakage. The experimental results show that secret keys are revealed even though there are various disturbing factors such as voltage regulators and AC/DC converters between the target module and the measurement points. We also discuss information-suppression techniques as electrical-level countermeasures against such CEMAs.

Treatment vault shielding for a flattening filter-free medical linear accelerator

NASA Astrophysics Data System (ADS)

Kry, Stephen F.; Howell, Rebecca M.; Polf, Jerimy; Mohan, Radhe; Vassiliev, Oleg N.

2009-03-01

The requirements for shielding a treatment vault with a Varian Clinac 2100 medical linear accelerator operated both with and without the flattening filter were assessed. Basic shielding parameters, such as primary beam tenth-value layers (TVLs), patient scatter fractions, and wall scatter fractions, were calculated using Monte Carlo simulations of 6, 10 and 18 MV beams. Relative integral target current requirements were determined from treatment planning studies of several disease sites with, and without, the flattening filter. The flattened beam shielding data were compared to data published in NCRP Report No. 151, and the unflattened beam shielding data were presented relative to the NCRP data. Finally, the shielding requirements for a typical treatment vault were determined for a single-energy (6 MV) linac and a dual-energy (6 MV/18 MV) linac. With the exception of large-angle patient scatter fractions and wall scatter fractions, the vault shielding parameters were reduced when the flattening filter was removed. Much of this reduction was consistent with the reduced average energy of the FFF beams. Primary beam TVLs were reduced by 12%, on average, and small-angle scatter fractions were reduced by up to 30%. Head leakage was markedly reduced because less integral target current was required to deliver the target dose. For the treatment vault examined in the current study, removal of the flattening filter reduced the required thickness of the primary and secondary barriers by 10-20%, corresponding to 18 m3 less concrete to shield the single-energy linac and 36 m3 less concrete to shield the dual-energy linac. Thus, a shielding advantage was found when the linac was operated without the flattening filter. This translates into a reduction in occupational exposure and/or the cost and space of shielding.

Treatment vault shielding for a flattening filter-free medical linear accelerator.

PubMed

Kry, Stephen F; Howell, Rebecca M; Polf, Jerimy; Mohan, Radhe; Vassiliev, Oleg N

2009-03-07

The requirements for shielding a treatment vault with a Varian Clinac 2100 medical linear accelerator operated both with and without the flattening filter were assessed. Basic shielding parameters, such as primary beam tenth-value layers (TVLs), patient scatter fractions, and wall scatter fractions, were calculated using Monte Carlo simulations of 6, 10 and 18 MV beams. Relative integral target current requirements were determined from treatment planning studies of several disease sites with, and without, the flattening filter. The flattened beam shielding data were compared to data published in NCRP Report No. 151, and the unflattened beam shielding data were presented relative to the NCRP data. Finally, the shielding requirements for a typical treatment vault were determined for a single-energy (6 MV) linac and a dual-energy (6 MV/18 MV) linac. With the exception of large-angle patient scatter fractions and wall scatter fractions, the vault shielding parameters were reduced when the flattening filter was removed. Much of this reduction was consistent with the reduced average energy of the FFF beams. Primary beam TVLs were reduced by 12%, on average, and small-angle scatter fractions were reduced by up to 30%. Head leakage was markedly reduced because less integral target current was required to deliver the target dose. For the treatment vault examined in the current study, removal of the flattening filter reduced the required thickness of the primary and secondary barriers by 10-20%, corresponding to 18 m(3) less concrete to shield the single-energy linac and 36 m(3) less concrete to shield the dual-energy linac. Thus, a shielding advantage was found when the linac was operated without the flattening filter. This translates into a reduction in occupational exposure and/or the cost and space of shielding.

Power reduction by power gating in differential pair type spin-transfer-torque magnetic random access memories for low-power nonvolatile cache memories

NASA Astrophysics Data System (ADS)

Ohsawa, Takashi; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

2014-01-01

Array operation currents in spin-transfer-torque magnetic random access memories (STT-MRAMs) that use four differential pair type magnetic tunnel junction (MTJ)-based memory cells (4T2MTJ, two 6T2MTJs and 8T2MTJ) are simulated and compared with that in SRAM. With L3 cache applications in mind, it is assumed that the memories are composed of 32 Mbyte capacity to be accessed in 64 byte in parallel. All the STT-MRAMs except for the 8T2MTJ one are designed with 32 bit fine-grained power gating scheme applied to eliminate static currents in the memory cells that are not accessed. The 8T2MTJ STT-MRAM, the cell’s design concept being not suitable for the fine-grained power gating, loads and saves 32 Mbyte data in 64 Mbyte unit per 1 Mbit sub-array in 2 × 103 cycles. It is shown that the array operation current of the 4T2MTJ STT-MRAM is 70 mA averaged in 15 ns write cycles at Vdd = 0.9 V. This is the smallest among the STT-MRAMs, about the half of the low standby power (LSTP) SRAM whose array operation current is totally dominated by the cells’ subthreshold leakage.

Properties of zirconium silicate and zirconium-silicon oxynitride high-k dielectric alloys for advanced microelectronic applications: Chemical and electrical characterizations

NASA Astrophysics Data System (ADS)

Ju, Byongsun

2005-11-01

As the microelectronic devices are aggressively scaled down to the 1999 International Technology Roadmap, the advanced complementary metal oxide semiconductor (CMOS) is required to increase packing density of ultra-large scale integrated circuits (ULSI). High-k alternative dielectrics can provide the required levels of EOT for device scaling at larger physical thickness, thereby providing a materials pathway for reducing the tunneling current. Zr silicates and its end members (SiO2 and ZrO2) and Zr-Si oxynitride films, (ZrO2)x(Si3N 4)y(SiO2)z, have been deposited using a remote plasma-enhanced chemical vapor deposition (RPECVD) system. After deposition of Zr silicate, the films were exposed to He/N2 plasma to incorporate nitrogen atoms into the surface of films. The amount of incorporated nitrogen atoms was measured by on-line Auger electron spectrometry (AES) as a function of silicate composition and showed its local minimum around the 30% silicate. The effect of nitrogen atoms on capacitance-voltage (C-V) and leakage-voltage (J-V) were also investigated by fabricating metal-oxide-semiconductor (MOS) capacitors. Results suggested that incorporating nitrogen into silicate decreased the leakage current in SiO2-rich silicate, whereas the leakage increased in the middle range of silicate. Zr-Si oxynitride was a pseudo-ternary alloy and no phase separation was detected by x-ray photoelectron spectroscopy (XPS) analysis up to 1100°C annealing. The leakage current of Zr-Si oxynitride films showed two different temperature dependent activation energies, 0.02 eV for low temperature and 0.3 eV for high temperature. Poole-Frenkel emission was the dominant leakage mechanism. Zr silicate alloys with no Si3N4 phase were chemically separated into the SiO2 and ZrO2 phase as annealed above 900°C. While chemical phase separation in Zr silicate films with Si 3N4 phase (Zr-Si oxynitride) were suppressed as increasing the amount of Si3N4 phase due to the narrow bonding network m Si3N4 phase. (3.4 bonds/atom for Si3 N4 network, 2.67 bonds/atom for SiO2 network).

30 CFR 75.301 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-07-01

... solid blocks of coal or rock so that any mixing of air currents between each is limited to leakage. AMS...-warning fire detection systems using newer technology that provides equal or greater protection, as...

Current isolating epitaxial buffer layers for high voltage photodiode array

DOEpatents

Morse, Jeffrey D.; Cooper, Gregory A.

2002-01-01

An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Kyu Sang

2017-09-01

In this work, the impact of trap states at the p-(Al)GaN/AlGaN interface has been investigated for the normally-off mode p-(Al)GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) by means of frequency dependent conductance. From the current-voltage (I-V) measurement, it was found that the p-AlGaN gate integrated device has higher drain current and lower gate leakage current compared to the p-GaN gate integrated device. We obtained the interface trap density and the characteristic time constant for the p-type gate integrated HFETs under the forward gate voltage of up to 6 V. As a result, the interface trap density (characteristic time constant) of the p-GaN gate device was lower (longer) than that of the p-AlGaN. Furthermore, it was analyzed that the trap state energy level of the p-GaN gate device was located at the shallow level relative to the p-AlGaN gate device, which accounts for different gate leakage current of each devices.

Silicon device performance measurements to support temperature range enhancement

NASA Technical Reports Server (NTRS)

Bromstead, James; Weir, Bennett; Nelms, R. Mark; Johnson, R. Wayne; Askew, Ray

1994-01-01

Silicon based power devices can be used at 200 C. The device measurements made during this program show a predictable shift in device parameters with increasing temperature. No catastrophic or abrupt changes occurred in the parameters over the temperature range. As expected, the most dramatic change was the increase in leakage currents with increasing temperature. At 200 C the leakage current was in the milliAmp range but was still several orders of magnitude lower than the on-state current capabilities of the devices under test. This increase must be considered in the design of circuits using power transistors at elevated temperature. Three circuit topologies have been prototyped using MOSFET's and IGBT's. The circuits were designed using zero current or zero voltage switching techniques to eliminate or minimize hard switching of the power transistors. These circuits have functioned properly over the temperature range. One thousand hour life data have been collected for two power supplies with no failures and no significant change in operating efficiency. While additional reliability testing should be conducted, the feasibility of designing soft switched circuits for operation at 200 C has been successfully demonstrated.

Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes

NASA Astrophysics Data System (ADS)

Hsueh, Kuang-Po; Cheng, Po-Wei; Cheng, Yi-Chang; Sheu, Jinn-Kong; Yeh, Yu-Hsiang; Chiu, Hsien-Chin; Wang, Hsiang-Chun

2013-03-01

This study investigates the temperature dependence of the current-voltage (I-V) characteristics of Al-doped MgxZn1-xO/p-GaN junction diodes. Specifically, this study reports the deposition of n-type Al-doped MgxZn1-xO (AMZO) films on p-GaN using a radio-frequency (RF) magnetron sputtering system followed by annealing at 700, 800, 900, and 1000 °C in a nitrogen ambient for 60 seconds, respectively. The AMZO/GaN films were thereafter analyzed using Hall measurement and the x-ray diffraction (XRD) patterns. The XRD results show that the diffraction angles of the annealed AMZO films remain the same as that of GaN without shifting. The n-AMZO/p-GaN diode with 900 °C annealing had the lowest leakage current in forward and reverse bias. However, the leakage current of the diodes did not change significantly with an increase in annealing temperatures. These findings show that the n-AMZO/p-GaN junction diode is feasible for GaN-based heterojunction bipolar transistors (HBTs) and UV light-emitting diodes (LEDs).

A disposable adhesive patch for stress urinary incontinence.

PubMed

North, B B

1998-04-01

Stress urinary incontinence (SUI) affects 5 million women in the United States. Current surgical and pharmacological management options are often unsuccessful, forcing many sufferers to rely on bulky and uncomfortable sanitary protection. This study evaluated the safety, efficacy, and acceptability of a small, disposable adhesive patch designed to seal the urethral opening and prevent urine leakage. Thirty-seven women with mild-to-moderate SUI were recruited from a suburban community. Each volunteer participated in a 21-week protocol that included a 1-week qualifying period, 4-week (pretest) control period, 12-week patch-use period, and 4-week (posttest) control period. Patch efficacy was evaluated with quantitative (leakage into sanitary napkin) and qualitative (voiding diary) measures of urine leakage. Symptom questionnaires were also completed. Overall leakage was reduced by 60%, from 1.1 +/- .3 standard error of the mean (SEM) to .44 +/- .11 (SEM) grams of urine per hour. Perception of dryness, measured by voiding diaries, improved 67%, from 13.3 +/- 1.9 (SEM) to 4.3 +/- 0.9 (SEM) leakage episodes per week. Safety evaluation included peri-urethral cytology, urinalysis and urine culture, and vaginal cultures. All measures were unaffected by 3 months of patch use. Acceptability was assessed with questionnaires that measured the impact of patch use on activities of daily living and overall quality of life. Women reported a significant improvement in both measures. All but one volunteer found that the patch was comfortable and were able to place it correctly between the inner labia with written instructions only. The disposable patch significantly reduced urine leakage resulting from SUI in community-based women. Dryness improved significantly, both by measurement of actual leakage and by the subject's perception of dryness. The maturation index of the vestibular tissues showed an increase in the number of superficial cells during patch use. Otherwise, there were no significant changes in vulvar tissues, urine composition, or microbial flora (in vaginal and urine samples). Volunteers reported that the patch improved their overall quality of life.

A new lifetime estimation model for a quicker LED reliability prediction

NASA Astrophysics Data System (ADS)

Hamon, B. H.; Mendizabal, L.; Feuillet, G.; Gasse, A.; Bataillou, B.

2014-09-01

LED reliability and lifetime prediction is a key point for Solid State Lighting adoption. For this purpose, one hundred and fifty LEDs have been aged for a reliability analysis. LEDs have been grouped following nine current-temperature stress conditions. Stress driving current was fixed between 350mA and 1A and ambient temperature between 85C and 120°C. Using integrating sphere and I(V) measurements, a cross study of the evolution of electrical and optical characteristics has been done. Results show two main failure mechanisms regarding lumen maintenance. The first one is the typically observed lumen depreciation and the second one is a much more quicker depreciation related to an increase of the leakage and non radiative currents. Models of the typical lumen depreciation and leakage resistance depreciation have been made using electrical and optical measurements during the aging tests. The combination of those models allows a new method toward a quicker LED lifetime prediction. These two models have been used for lifetime predictions for LEDs.

Electrical Current Leakage and Open-Core Threading Dislocations in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2014-08-04

Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) lightemitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al0.7Ga0.3N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these opencore threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al0.7Ga0.3N templatesmore » are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.« less

Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

NASA Astrophysics Data System (ADS)

Mamor, M.; Fu, Y.; Nur, O.; Willander, M.; Bengtsson, S.

We investigate, both experimentally and theoretically, current and capacitance (I-V/C-V) characteristics and the device performance of Si/SiO2/Si single-barrier varactor diodes (SBVs). Two diodes were fabricated with different SiO2 layer thicknesses using the state-of-the-art wafer bonding technique. The devices have very low leakage currents (about 5×10-2 and 1.8×10-2 mA/mm2) and intrinsic capacitance levels of typically 1.5 and 50 nF/mm2 for diodes with 5-nm and 20-nm oxide layers, respectively. With the present device physical parameters (25-mm2 device area, 760-μm modulation layer thickness and 1015-cm-3 doping level), the estimated cut-off frequency is about 5×107 Hz. With the physical parameters of the present existing III-V triplers, the cut-off frequency of our Si-based SBV can be as high as 0.5 THz.

Solar power generation system for reducing leakage current

NASA Astrophysics Data System (ADS)

Wu, Jinn-Chang; Jou, Hurng-Liahng; Hung, Chih-Yi

2018-04-01

This paper proposes a transformer-less multi-level solar power generation system. This solar power generation system is composed of a solar cell array, a boost power converter, an isolation switch set and a full-bridge inverter. A unipolar pulse-width modulation (PWM) strategy is used in the full-bridge inverter to attenuate the output ripple current. Circuit isolation is accomplished by integrating the isolation switch set between the solar cell array and the utility, to suppress the leakage current. The isolation switch set also determines the DC bus voltage for the full-bridge inverter connecting to the solar cell array or the output of the boost power converter. Accordingly, the proposed transformer-less multi-level solar power generation system generates a five-level voltage, and the partial power of the solar cell array is also converted to AC power using only the full-bridge inverter, so the power efficiency is increased. A prototype is developed to validate the performance of the proposed transformer-less multi-level solar power generation system.

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

PubMed

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Topics in electrochemical degradation of photovoltaic modules

NASA Technical Reports Server (NTRS)

Mon, G. R.

1984-01-01

Electrochemical degradation of photovoltaic modules was examined. It is found that the extent of electrochemical damage is dependent on the integrated leakage current. The PV electrochemical degradation mechanisms in the two polarities are different: (1) degradation rates in the two polarities are of the same order of magnitude; (2) center tapped grounded arrays are a preferred system configuration to minimize electrochemical degradation. The use of thicker pottant layers and polymer substrate films to reduce equilibrium leakage current values is suggested. A metallized substrate layer, if used, should be isolated from the pottant and the frame by polyester layers, and EVA modules appear to be consistent with 30 year life allocation levels for electrochemical damage. Temperature acceleration factors are well behaved and moderately well understood; humidity acceleration factors vary radically with module construction and materials and require additional research.

Sheath effects observed on a 10 meter high voltage panel in simulated low earth orbit plasma

NASA Technical Reports Server (NTRS)

Mccox, J. E.; Konradi, A.

1979-01-01

A large (1m x 10m) flat surface of conductive material was biased to high voltage (+ or - 3000 V) to simulate the behavior of a large solar array in low earth orbit. The model array was operated in a plasma environment of 1,000 to 1,000,000/cu cm, with sufficient free space around it for the resulting plasma sheaths to develop unimpeded for 5-10 meters into the surrounding plasma. Measurements of the resulting sheath thickness were obtained. The observed thickness varied approximately as V to the 3/4 power and N to the 1/2 power. This effect appears to limit total current leakage from the test array until sheath dimensions exceed about 1 meter. Total leakage current was also measured with the array.

Effects of europium content on the microstructural and ferroelectric properties of Bi4-xEuxTi3O12 thin films

NASA Astrophysics Data System (ADS)

Zheng, X. J.; He, L.; Zhou, Y. C.; Tang, M. H.

2006-12-01

The effects of europium (Eu) content on the microstructure, fatigue endurance, leakage current density, and remnant polarization (2Pr) of Bi4-xEuxTi3O12 (BET) thin films prepared by metal-organic decomposition method at 700°C annealing temperature were studied in detail. The results showed that 2Pr (82μC/cm2 under 300kV/cm), fatigue endurance (2% loss of 2Pr after 9.0×109 switching cycles), and leakage current density (1×10-8A/cm2 at 200kV/cm) of BET thin film with x =0.85 are better than those of thin films with other contents. Additionally, the mechanism concerning the dependence of ferroelectric properties on Eu content was discussed.

Relationship between Leakage Current and Pollution Deposits on the Surface of Polymeric Insulator

NASA Astrophysics Data System (ADS)

Miyake, Takuma; Seo, Yuya; Sakoda, Tatsuya; Otsubo, Masahisa

Application of polymeric materials used for housing insulators is considered. However, because polymeric insulator is organic matter, the aged deterioration is anxious. The lifetime of polymeric insulator is influenced by environmental conditions such as ultraviolet, acid rain, and polluted deposits. A change of the surface condition of polymeric material causes the dry band arc discharge and the discharge may lower the insulation strength. To investigate the relationship between insoluble pollution and occurrence of dry band arc discharge, we performed a salt-fog test with ethylene vinyl acetate (EVA) samples. The results showed that the heavy erosion caused by frequent dry band arc discharges occurred even in the case of a light polluted condition. Additionally, a very characteristic increase tendency in leakage current with a period of about 5 h was observed during the mist period.

Seal Investigations of an Active Clearance Control System Concept

NASA Technical Reports Server (NTRS)

Steinetz, Bruce M.; Taylor, Shawn; Oswald, Jay; DeCastro, Jonathan A.

2006-01-01

In an effort to improve upon current thermal active clearance control methods, a first generation, fast-acting mechanically actuated, active clearance control system has been designed and installed into a non-rotating test rig. In order to harvest the benefit of tighter blade tip clearances, low-leakage seals are required for the actuated carrier segments of the seal shroud to prevent excessive leakage of compressor discharge (P3) cooling air. The test rig was designed and fabricated to facilitate the evaluation of these types of seals, identify seal leakage sources, and test other active clearance control system concepts. The objective of this paper is to present both experimental and analytical investigations into the nature of the face-seal to seal-carrier interface. Finite element analyses were used to examine face seal contact pressures and edge-loading under multiple loading conditions, varied E-seal positions and two new face seal heights. The analyses indicated that moving the E-seal inward radially and reducing face seal height would lead to more uniform contact conditions between the face seal and the carriers. Lab testing confirmed that moving the balance diameter inward radially caused a decrease in overall system leakage.

Modelling of illuminated current-voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

NASA Astrophysics Data System (ADS)

Gopal, Vishnu; Qiu, WeiCheng; Hu, Weida

2014-11-01

The current-voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation-recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, Iexcess = Ir0 + K1 exp (K2 V), where Ir0, K1, and K2 are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.

Mechanisms of mineral membrane fouling growth modulated by pulsed modes of current during electrodialysis: evidences of water splitting implications in the appearance of the amorphous phases of magnesium hydroxide and calcium carbonate.

PubMed

Cifuentes-Araya, Nicolás; Astudillo-Castro, Carolina; Bazinet, Laurent

2014-07-15

Experiments revealed the fouling nature evolutions along different electrodialysis (ED) trials, and how it disappears when current pulsation acts repetitively on the interfaces of ion-exchange membranes (IEMs). Fouling was totally controlled on the diluate side of cation-exchange membrane (CEM) by the repetitive pulsation frequency of the higher on-duty ratios applied. They created steady water splitting proton-barriers that neutralized OH(-) leakage through the membrane, decreasing the interfacial pH, and fouling of the concentrate side. The anion-exchange membrane (AEM) on the diluate side was similarly protected, but it was fouled once water splitting OH(-) generation became either intense enough or excessively weak. Interestingly, amorphous magnesium hydroxide (AMH) stemmed on the CEM-diluate side from brucite under intense water splitting OH(-) generation, and/or strong OH(-) leakage electromigration through the membrane. Water dissociation and overlimiting current regimes triggered drastic water molecule removal from crystal lattices through an accelerated cascade water splitting reaction. Also, amorphous calcium carbonate (ACC) appeared on CEM under intense water splitting reaction, and disappeared once intense OH(-) leakage was allowed by the water splitting proton-barrier dissipation. Our findings have implications for membrane fouling control, as well as for the understanding of the growth behavior of CaCO3 and Mg(OH)2 species on electromembrane interfaces. Copyright © 2014 Elsevier Inc. All rights reserved.

Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2018-02-01

Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

Assessment of the risk of failure of high voltage substations due to environmental conditions and pollution on insulators.

PubMed

Castillo Sierra, Rafael; Oviedo-Trespalacios, Oscar; Candelo, John E; Soto, Jose D

2015-07-01

Pollution on electrical insulators is one of the greatest causes of failure of substations subjected to high levels of salinity and environmental pollution. Considering leakage current as the main indicator of pollution on insulators, this paper focuses on establishing the effect of the environmental conditions on the risk of failure due to pollution on insulators and determining the significant change in the magnitude of the pollution on the insulators during dry and humid periods. Hierarchical segmentation analysis was used to establish the effect of environmental conditions on the risk of failure due to pollution on insulators. The Kruskal-Wallis test was utilized to determine the significant changes in the magnitude of the pollution due to climate periods. An important result was the discovery that leakage current was more common on insulators during dry periods than humid ones. There was also a higher risk of failure due to pollution during dry periods. During the humid period, various temperatures and wind directions produced a small change in the risk of failure. As a technical result, operators of electrical substations can now identify the cause of an increase in risk of failure due to pollution in the area. The research provides a contribution towards the behaviour of the leakage current under conditions similar to those of the Colombian Caribbean coast and how they affect the risk of failure of the substation due to pollution.

Theory versus experiment for the rotordynamic coefficients of annular gas seals. I - Test facility and apparatus

NASA Technical Reports Server (NTRS)

Childs, D. W.; Nelson, C. E.; Nicks, C.; Scharrer, J.; Elrod, D.

1985-01-01

A facility and apparatus are described for determining the rotordynamic coefficients and leakage characteristics of annular gas seals. The coefficients and leakage characteristics of annular gas seals. The apparatus has a current top speed of 8000 cpm with a nominal seal diameter of 15.24 cmn (6 in.). The air supply unit yields a seal pressure ratio of approximately 7. An external shaker is used to excite the test rotor. The capability to independently calculate all rotordynamic coefficients at a given operating condition with one excitation frequency are discussed.

Sacral nerve root neuromodulation: an effective treatment for refractory urge incontinence.

PubMed

Shaker, H S; Hassouna, M

1998-05-01

Sacral foramina implants have been recognized recently as a method for treatment of refractory urinary urge incontinence. We study the outcome of the procedure with in-depth analysis of the results of 18 implanted cases. Patients with urinary urge incontinence were subjected to percutaneous nerve evaluation of the S3 roots as a temporary screening test to determine response to neuromodulation. Satisfactory responders were implanted with permanent sacral root neuroprosthesis. The study design included comprehensive voiding diaries for 4 consecutive days twice as a baseline, 1 with percutaneous nerve evaluation screening, 1 after the percutaneous nerve evaluation, 1 at the 1, 3 and 6 post-implantation visits, and every 6 months thereafter. Uroflowmetry and quality of life questionnaires were performed at the same intervals. Urodynamic study was done as a baseline and 6 months after implantation of the neuroprosthesis. All 18 patients (16 women and 2 men) with refractory urge incontinence received a sacral foramina neuroprosthesis after demonstrating a good response to the percutaneous nerve evaluation. Average patient age at presentation was 42.3+/-3.3 years (range 22 to 67) and duration of urinary symptoms was 6.6+/-1.3 years (range 1.2 to 18.8). Average followup was 18.8 months (range 3 to 83). Neuromodulation in these patients showed a marked reduction in leakage episodes from 6.49 to 1.98 times per 24 hours and in the leakage severity score. Eight patients became completely dry and 4 had average leakage episodes of 1 or less daily. Patients showed as well a decrease in urinary frequency with an increase in functional bladder capacity. Associated pelvic pain improved substantially. Cystometrograms demonstrated increased volume at first sensation by 50% and increased cystometric capacity by 15% with the disappearance of uninhibited contractions in 1 of the 4 patients who presented with it preoperatively. There was also noticeable improvement in the quality of life. Complication rate was low and none was life threatening. Sacral root neuromodulation is an appealing modality for treatment of urge incontinence refractory to conventional pharmacotherapy. The relative simplicity of the technique, promising results and low complication rate make this therapy a likely alternative.

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2016-02-01

Our paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. Moreover, the experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermalmore » model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Finally, numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.« less

Closed Incision Negative Pressure Wound Therapy vs Conventional Dry Dressings After Primary Knee Arthroplasty: A Randomized Controlled Study.

PubMed

Manoharan, Varaguna; Grant, Andrea L; Harris, Alicia C; Hazratwala, Kaushik; Wilkinson, Matthew P R; McEwen, Peter J C

2016-11-01

The purpose of this study was to assess the effect of negative pressure wound therapy (NPWT) on quality of life (QoL), wound complications, and cost after primary knee arthroplasty. A prospective analysis of 33 patients undergoing primary knee arthroplasty performed by 3 surgeons in one institution. The first 12 patients (3 bilateral and 9 unilateral) had conventional dry dressings (CDD) applied and cost of dressings was assessed. The other 21 patients all underwent bilateral knee arthroplasty and had either side randomized to receiving NPWT or CDD. Cost of dressings, wound complications, and QoL were compared. One patient had a reaction to the NPWT requiring readmission. Another had persistent wound drainage that required NPWT application. There were no wound issues in the remaining 31 patients. The average cost in the first 12 patients was Australian dollar $48.70 with an average of 1.5 changes on ward. In the 21 patients receiving both dressings, the average cost for CDD was less (Australian dollar $43.51 vs $396.02, P ≤ .011, effect size [ES] = 1.06). When comparing QoL factors, wound leakage (0.14 vs 0.39 P = .019, ES = 1.02), and wound protection (0.16 vs 0.33, P = .001, ES = 0.021) were better in the NPWT group. There was no other significant difference in QoL factors. The average number of changes on the ward was less for the NPWT group (1.19 vs 1.38, P = .317, ES = 1.02). We found no benefit in wound healing or cost with NPWT post knee arthroplasty. There was some benefit in NPWT QoL factors less wound leakage and better protection. Crown Copyright © 2016. Published by Elsevier Inc. All rights reserved.

Nanowire Tunnel Field Effect Transistors: Prospects and Pitfalls

NASA Astrophysics Data System (ADS)

Sylvia, Somaia Sarwat

The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower power than the field effect transistor (FET). The TFET can circumvent the fundamental thermal limit of the inverse subthreshold slope (S) by exploiting interband tunneling of non-equilibrium "cold" carriers. The conduction mechanism in the TFET is governed by band-to-band tunneling which limits the drive current. TFETs built with III-V materials like InAs and InSb can produce enough tunneling current because of their small direct bandgap. Our simulation results show that although they require highly degenerate source doping to support the high electric fields in the tunnel region, the devices achieve minimum inverse subthreshold slopes of 30 mV/dec. In subthreshold, these devices experience both regimes of voltage-controlled tunneling and cold-carrier injection. Numerical results based on a discretized 8-band k.p model are compared to analytical WKB theory. For both regular FETs and TFETs, direct channel tunneling dominates the leakage current when the physical gate length is reduced to 5 nm. Therefore, a survey of materials is performed to determine their ability to suppress the direct tunnel current through a 5 nm barrier. The tunneling effective mass gives the best indication of the relative size of the tunnel currents. Si gives the lowest overall tunnel current for both the conduction and valence band and, therefore, it is the optimum choice for suppressing tunnel current at the 5 nm scale. Our numerical simulation shows that the finite number, random placement, and discrete nature of the dopants in the source of an InAs nanowire (NW) TFET affect both the mean value and the variance of the drive current and the inverse subthreshold slope. The discrete doping model gives an average drive current and an inverse subthreshold slope that are less than those predicted from the homogeneous doping model. The doping density required to achieve a target drive current is higher in the discrete doping model compared to the homogeneous doping model. The relative variation in the ON current decreases as the average doping density and/or NW diameter increases. For the largest 8 nm NW studied, the coefficient of variation in the ON current is ˜15% at a doping density of 1.5 x 1020 cm--3. Results from full self-consistent non-equilibrium Green's function calculations and semi-classical calculations are compared.

Push the flash floating gate memories toward the future low energy application

NASA Astrophysics Data System (ADS)

Della Marca, V.; Just, G.; Regnier, A.; Ogier, J.-L.; Simola, R.; Niel, S.; Postel-Pellerin, J.; Lalande, F.; Masoero, L.; Molas, G.

2013-01-01

In this paper the energy consumption of flash floating gate cell, during a channel hot electron operation, is investigated. We characterize the device using different ramp and box pulses on control gate, to find the best solution to have low energy consumption and good cell performances. We use a new dynamic method to measure the drain current absorption in order to evaluate the impact of different bias conditions, and to study the cell behavior. The programming window and the energy consumption are considered as fundamental parameters. Using this dynamic technique, three zones of work are found; it is possible to optimize the drain voltage during the programming operation to minimize the energy consumption. Moreover, the cell's performances are improved using the CHISEL effect, with a reverse body bias. After the study concerning the programming pulses adjusting, we show the results obtained by increasing the channel doping dose parameter. Considering a channel hot electron programming operation, it is important to focus our attention on the bitline leakage consumption contribution. We measured it for the unselected bitline cells, and we show the effects of the lightly doped drain implantation energy on the leakage current. In this way the impact of gate induced drain leakage in band-to-band tunneling regime decreases, improving the cell's performances in a memory array.

Investigation of electrolyte leaching in the performance degradation of phosphoric acid-doped polybenzimidazole membrane-based high temperature fuel cells

NASA Astrophysics Data System (ADS)

Jeong, Yeon Hun; Oh, Kyeongmin; Ahn, Sungha; Kim, Na Young; Byeon, Ayeong; Park, Hee-Young; Lee, So Young; Park, Hyun S.; Yoo, Sung Jong; Jang, Jong Hyun; Kim, Hyoung-Juhn; Ju, Hyunchul; Kim, Jin Young

2017-09-01

Precise monitoring of electrolyte leaching in high-temperature polymer electrolyte membrane fuel cell (HT-PEMFC) devices during lifetime tests is helpful in making a diagnosis of their quality changes and analyzing their electrochemical performance degradation. Here, we investigate electrolyte leaching in the performance degradation of phosphoric acid (PA)-doped polybenzimidazole (PBI) membrane-based HT-PEMFCs. We first perform quantitative analyses to measure PA leakage during cell operation by spectrophotometric means, and a higher PA leakage rate is detected when the current density is elevated in the cell. Second, long-term degradation tests under various current densities of the cells and electrochemical impedance spectroscopy (EIS) analysis are performed to examine the influence of PA loss on the membrane and electrodes during cell performance degradation. The combined results indicate that PA leakage affect cell performance durability, mostly due to an increase in charge transfer resistance and a decrease in the electrochemical surface area (ECSA) of the electrodes. Additionally, a three-dimensional (3-D) HT-PEMFC model is applied to a real-scale experimental cell, and is successfully validated against the polarization curves measured during various long-term experiments. The simulation results highlight that the PA loss from the cathode catalyst layer (CL) is a significant contributor to overall performance degradation.

Accurate electrical prediction of memory array through SEM-based edge-contour extraction using SPICE simulation

NASA Astrophysics Data System (ADS)

Shauly, Eitan; Rotstein, Israel; Peltinov, Ram; Latinski, Sergei; Adan, Ofer; Levi, Shimon; Menadeva, Ovadya

2009-03-01

The continues transistors scaling efforts, for smaller devices, similar (or larger) drive current/um and faster devices, increase the challenge to predict and to control the transistor off-state current. Typically, electrical simulators like SPICE, are using the design intent (as-drawn GDS data). At more sophisticated cases, the simulators are fed with the pattern after lithography and etch process simulations. As the importance of electrical simulation accuracy is increasing and leakage is becoming more dominant, there is a need to feed these simulators, with more accurate information extracted from physical on-silicon transistors. Our methodology to predict changes in device performances due to systematic lithography and etch effects was used in this paper. In general, the methodology consists on using the OPCCmaxTM for systematic Edge-Contour-Extraction (ECE) from transistors, taking along the manufacturing and includes any image distortions like line-end shortening, corner rounding and line-edge roughness. These measurements are used for SPICE modeling. Possible application of this new metrology is to provide a-head of time, physical and electrical statistical data improving time to market. In this work, we applied our methodology to analyze a small and large array's of 2.14um2 6T-SRAM, manufactured using Tower Standard Logic for General Purposes Platform. 4 out of the 6 transistors used "U-Shape AA", known to have higher variability. The predicted electrical performances of the transistors drive current and leakage current, in terms of nominal values and variability are presented. We also used the methodology to analyze an entire SRAM Block array. Study of an isolation leakage and variability are presented.

Mitigation of PID in commercial PV modules using current interruption method

NASA Astrophysics Data System (ADS)

Bora, Birinchi; Oh, Jaewon; Tatapudi, Sai; Sastry, Oruganty S.; Kumar, Rajesh; Prasad, Basudev; Tamizhmani, Govindasamy

2017-08-01

Potential-induced degradation (PID) is known to have a very severe effect on the reliability of PV modules. PID is caused due to the leakage of current from the cell circuit to the grounded frame under humid conditions of high voltage photovoltaic (PV) systems. There are multiple paths for the current leakage. The most dominant leakage path is from the cell to the frame through encapsulant, glass bulk and glass surface. This dominant path can be prevented by interrupting the electrical conductivity at the glass surface. In our previous works related to this topic, we demonstrated the effectiveness of glass surface conductivity interruption technique using one-cell PV coupons. In this work, we demonstrate the effectiveness of this technique using a full size commercial module susceptible to PID. The interruption of surface conductivity of the commercial module was achieved by attaching a narrow, thin flexible glass strips, from Corning, called Willow Glass on the glass surface along the inner edges of the frame. The flexible glass strip was attached to the module glass surface by heating the glass strip with an ionomer adhesive underneath using a handheld heat gun. The PID stress test was performed at 60°C and 85% RH for 96 hours at -600 V. Pre- and post-PID characterizations including I-V and electroluminescence were carried out to determine the performance loss and affected cell areas. This work demonstrates that the PID issue can be effectively addressed by using this current interruption technique. An important benefit of this approach is that this interruption technique can be applied after manufacturing the modules and after installing the modules in the field as well.

Significantly enhanced ferroelectricity and magnetic properties in (Sr{sub 0.5}Ca{sub 0.5})TiO{sub 3}-modified BiFeO{sub 3} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Juan; Liu, Xiao Qiang, E-mail: xqliu@zju.edu.cn, E-mail: xmchen59@zju.edu.cn; Chen, Xiang Ming, E-mail: xqliu@zju.edu.cn, E-mail: xmchen59@zju.edu.cn

2015-05-07

BiFeO{sub 3} multiferroic ceramics were modified by introducing (Sr{sub 0.5}Ca{sub 0.5})TiO{sub 3} to form solid solutions. The single phase structure was easy to be obtained in Bi{sub 1−x}(Sr{sub 0.5}Ca{sub 0.5}){sub x}Fe{sub 1−x}Ti{sub x}O{sub 3} (x = 0.2, 0.25, 0.3, and 0.4) solid solutions. Rietveld refinement of X-ray diffraction data revealed a transition from rhombohedral R3c (x = 0.2, 0.25, and 0.3) to orthorhombic Pnma (x = 0.4). Current density-field (J-E) characteristics indicated that the leakage current density was reduced by three orders of magnitude in Bi{sub 1−x}(Sr{sub 0.5}Ca{sub 0.5}){sub x}Fe{sub 1−x}Ti{sub x}O{sub 3} ceramics. Both the ferroelectricity and magnetic properties were significantly enhanced in the presentmore » solid solutions. P-E hysteresis loop measurements with dynamic leakage current compensation methods showed the significantly enhanced ferroelectric properties for x = 0.25 and 0.3 and the paraelectric behavior for x = 0.4. The best ferromagnetic characteristics were achieved in the composition of x = 0.25, where the saturated M-H loop was determined with M{sub r} = 34.8 emu/mol. The improvement of ferroelectricity was mainly due to the suppressed leakage current, and the enhanced magnetism originated from the partial substitution of Fe{sup 3+} by Ti{sup 4+}, which destroyed its previous spiral structure to allow the appearance of a macroscopic magnetization.« less

Assessing the greenhouse impact of natural gas

NASA Astrophysics Data System (ADS)

Cathles, L. M.

2012-06-01

The global warming impact of substituting natural gas for coal and oil is currently in debate. We address this question here by comparing the reduction of greenhouse warming that would result from substituting gas for coal and some oil to the reduction which could be achieved by instead substituting zero carbon energy sources. We show that substitution of natural gas reduces global warming by 40% of that which could be attained by the substitution of zero carbon energy sources. At methane leakage rates that are ˜1% of production, which is similar to today's probable leakage rate of ˜1.5% of production, the 40% benefit is realized as gas substitution occurs. For short transitions the leakage rate must be more than 10 to 15% of production for gas substitution not to reduce warming, and for longer transitions the leakage must be much greater. But even if the leakage was so high that the substitution was not of immediate benefit, the 40%-of-zero-carbon benefit would be realized shortly after methane emissions ceased because methane is removed quickly from the atmosphere whereas CO2 is not. The benefits of substitution are unaffected by heat exchange to the ocean. CO2 emissions are the key to anthropogenic climate change, and substituting gas reduces them by 40% of that possible by conversion to zero carbon energy sources. Gas substitution also reduces the rate at which zero carbon energy sources must eventually be introduced.

Design Study of Wafer Seals for Future Hypersonic Vehicles

NASA Technical Reports Server (NTRS)

Dunlap, Patrick H.; Finkbeiner, Joshua R.; Steinetz, Bruce M.; DeMange, Jeffrey J.

2005-01-01

Future hypersonic vehicles require high temperature, dynamic seals in advanced hypersonic engines and on the vehicle airframe to seal the perimeters of movable panels, flaps, and doors. Current seals do not meet the demanding requirements of these applications, so NASA Glenn Research Center is developing improved designs to overcome these shortfalls. An advanced ceramic wafer seal design has shown promise in meeting these needs. Results from a design of experiments study performed on this seal revealed that several installation variables played a role in determining the amount of leakage past the seals. Lower leakage rates were achieved by using a tighter groove width around the seals, a higher seal preload, a tighter wafer height tolerance, and a looser groove length. During flow testing, a seal activating pressure acting behind the wafers combined with simulated vibrations to seat the seals more effectively against the sealing surface and produce lower leakage rates. A seal geometry study revealed comparable leakage for full-scale wafers with 0.125 and 0.25 in. thicknesses. For applications in which lower part counts are desired, fewer 0.25-in.-thick wafers may be able to be used in place of 0.125-in.-thick wafers while achieving similar performance. Tests performed on wafers with a rounded edge (0.5 in. radius) in contact with the sealing surface resulted in flow rates twice as high as those for wafers with a flat edge. Half-size wafers had leakage rates approximately three times higher than those for full-size wafers.

Defunctioning ileostomy reduces leakage rate in rectal cancer surgery - systematic review and meta-analysis.

PubMed

Pisarska, Magdalena; Gajewska, Natalia; Małczak, Piotr; Wysocki, Michał; Witowski, Jan; Torbicz, Grzegorz; Major, Piotr; Mizera, Magdalena; Dembiński, Marcin; Migaczewski, Marcin; Budzyński, Andrzej; Pędziwiatr, Michał

2018-04-17

The role of a defunctioning ileostomy in every anterior rectal resection with total mesorectal excision (TME) is still controversial. In this study, we aimed to review the current literature to determine the impact of ileostomy creation on postoperative outcomes in patients undergoing anterior rectal resection with TME. MEDLINE, Embase and Cochrane Library were searched for eligible studies. We analyzed data up to October 2017. Eligible studies had to compare patients with vs. without a defunctioning ileostomy in rectal cancer surgery and comprise data on anastomotic leakage in both groups. The primary outcome was anastomotic leakage. Secondary outcomes included the complication rate, mortality, reoperation rate, length of hospital stay and 30-day readmission. Initial search yielded 1,966 articles. Thorough evaluation resulted in 13 eligible articles which were analyzed. Leakage rate (RR = 0.43, 95% CI 0.28-0.67) and the number of reoperations (RR = 0.62, 95% CI 0.40-0.94) were significantly lower in the defunctioning stoma group. Morbidity was significantly higher in the stoma group (RR = 1.32, 95% CI 1.05-1.65). Analysis of mortality, length of hospital stay and readmission rate did not show any significant differences. A defunctioning ileostomy may decrease the anastomotic leakage rate, additionally significantly reducing the risk of reoperations but it may also increase the overall complication rate. The presence of the protective stoma has no effect on mortality, length of hospital stay and readmission rate.

The Three Dimensional Flow Field at the Exit of an Axial-Flow Turbine Rotor

NASA Technical Reports Server (NTRS)

Lakshminarayana, B.; Ristic, D.; Chu, S.

1998-01-01

A systematic and comprehensive investigation was performed to provide detailed data on the three dimensional viscous flow phenomena downstream of a modem turbine rotor and to understand the flow physics such as origin, nature, development of wakes, secondary flow, and leakage flow. The experiment was carried out in the Axial Flow Turbine Research Facility (AFTRF) at Penn State, with velocity measurements taken with a 3-D LDV System. Two radial traverses at 1% and 10% of chord downstream of the rotor have been performed to identify the three-dimensional flow features at the exit of the rotor blade row. Sufficient spatial resolution was maintained to resolve blade wake, secondary flow, and tip leakage flow. The wake deficit is found to be substantial, especially at 1% of chord downstream of the rotor. At this location, negative axial velocity occurs near the tip, suggesting flow separation in the tip clearance region. Turbulence intensities peak in the wake region, and cross- correlations are mainly associated with the velocity gradient of the wake deficit. The radial velocities, both in the wake and in the endwall region, are found to be substantial. Two counter-rotating secondary flows are identified in the blade passage, with one occupying the half span close to the casino and the other occupying the half span close to the hub. The tip leakage flow is well restricted to 10% immersion from the blade tip. There are strong vorticity distributions associated with these secondary flows and tip leakage flow. The passage averaged data are in good agreement with design values.

A comparison of ground-based and aircraft-based methane emission flux estimates in a western oil and natural gas production basin

NASA Astrophysics Data System (ADS)

Snare, Dustin A.

Recent increases in oil and gas production from unconventional reservoirs has brought with it an increase of methane emissions. Estimating methane emissions from oil and gas production is complex due to differences in equipment designs, maintenance, and variable product composition. Site access to oil and gas production equipment can be difficult and time consuming, making remote assessment of emissions vital to understanding local point source emissions. This work presents measurements of methane leakage made from a new ground-based mobile laboratory and a research aircraft around oil and gas fields in the Upper Green River Basin (UGRB) of Wyoming in 2014. It was recently shown that the application of the Point Source Gaussian (PSG) method, utilizing atmospheric dispersion tables developed by US EPA (Appendix B), is an effective way to accurately measure methane flux from a ground-based location downwind of a source without the use of a tracer (Brantley et al., 2014). Aircraft measurements of methane enhancement regions downwind of oil and natural gas production and Planetary Boundary Layer observations are utilized to obtain a flux for the entire UGRB. Methane emissions are compared to volumes of natural gas produced to derive a leakage rate from production operations for individual production sites and basin-wide production. Ground-based flux estimates derive a leakage rate of 0.14 - 0.78 % (95 % confidence interval) per site with a mass-weighted average (MWA) of 0.20 % for all sites. Aircraft-based flux estimates derive a MWA leakage rate of 0.54 - 0.91 % for the UGRB.

Practical management of periprosthetic leakage in patients rehabilitated with a Provox® 2 voice prosthesis after total laryngectomy.

PubMed

Friedlander, Eviatar; Pinacho Martínez, Paloma; Poletti Serafini, Daniel; Martín-Oviedo, Carlos; Martínez Guirado, Tomás; Scola Yurrita, Bartolomé

Periprosthetic leakage of liquids is a common complication in patients rehabilitated with voice prostheses. Our objective was to describe and review the results of procedures for treating periprosthetic leakage. This was a retrospective analysis of 41 patients rehabilitated with Provox® 2 voice prostheses between 1997 and 2015. We describe 3 techniques: periprosthetic silicon collar placement, injection of hyaluronic acid into the tracheoesophageal wall and the combination of the 2 techniques. We present a method to reduce the diameter of the tracheoesophageal fistula by removing the voice prosthesis and placing a nasogastric tube through the fistula. In the 3 groups treated with silicone collar (n=5, 13 procedures), hyaluronic acid injection (n=5, 9 procedures) and the combination of both techniques (n=3, 5 procedures), we observed an increase in prosthesis lifespan of an average of 56 days (range 7-118 days), 32 days (range 3-55 days) and 63 days (range 28-136 days), respectively. The tracheoesophageal fistula diameter reduction was performed in 100% (n=6) of patients. The use of silicone collars, injection of hyaluronic acid into the tracheoesophageal wall and the combination of both techniques for the treatment of periprosthesis leakage increase the lifespan of the prosthesis. Temporary prosthesis removal and placement of nasogastric tube has also been shown effective in our experience. These techniques are simple, inexpensive and reproducible, thereby reducing healthcare costs. Copyright © 2016 Elsevier España, S.L.U. and Sociedad Española de Otorrinolaringología y Cirugía de Cabeza y Cuello. All rights reserved.

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

PubMed Central

Song, Mingxia; Stolz, Arnaud; Zhang, Douguo; Arocas, Juan; Markey, Laurent; Colas des Francs, Gérard; Dujardin, Erik; Bouhelier, Alexandre

2013-01-01

Plasmonics is an emerging technology capable of simultaneously transporting a plasmonic signal and an electronic signal on the same information support1,2,3. In this context, metal nanowires are especially desirable for realizing dense routing networks4. A prerequisite to operate such shared nanowire-based platform relies on our ability to electrically contact individual metal nanowires and efficiently excite surface plasmon polaritons5 in this information support. In this article, we describe a protocol to bring electrical terminals to chemically-synthesized silver nanowires6 randomly distributed on a glass substrate7. The positions of the nanowire ends with respect to predefined landmarks are precisely located using standard optical transmission microscopy before encapsulation in an electron-sensitive resist. Trenches representing the electrode layout are subsequently designed by electron-beam lithography. Metal electrodes are then fabricated by thermally evaporating a Cr/Au layer followed by a chemical lift-off. The contacted silver nanowires are finally transferred to a leakage radiation microscope for surface plasmon excitation and characterization8,9. Surface plasmons are launched in the nanowires by focusing a near infrared laser beam on a diffraction-limited spot overlapping one nanowire extremity5,9. For sufficiently large nanowires, the surface plasmon mode leaks into the glass substrate9,10. This leakage radiation is readily detected, imaged, and analyzed in the different conjugate planes in leakage radiation microscopy9,11. The electrical terminals do not affect the plasmon propagation. However, a current-induced morphological deterioration of the nanowire drastically degrades the flow of surface plasmons. The combination of surface plasmon leakage radiation microscopy with a simultaneous analysis of the nanowire electrical transport characteristics reveals the intrinsic limitations of such plasmonic circuitry. PMID:24378340

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Ballarin, Roberto

The aim of this document is to study the effect of radiation damage on the silicon sensors. The reflection of the effect of radiation can be observed in two fundamental parameters of the detector: the bias current and the bias voltage. The leakage current directly affects the noise, while the bias voltage is required to collect the maximum signal deposited by the charged particle.

Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.

PubMed

Plassmeyer, Paul N; Archila, Kevin; Wager, John F; Page, Catherine J

2015-01-28

Amorphous LaAlO3 dielectric thin films were fabricated via solution processing from inorganic nitrate precursors. Precursor solutions contained soluble oligomeric metal-hydroxyl and/or -oxo species as evidenced by dynamic light scattering (DLS) and Raman spectroscopy. Thin-film formation was characterized as a function of annealing temperature using Fourier transform infrared (FTIR), X-ray diffraction (XRD), X-ray reflectivity (XRR), scanning electron microscopy (SEM), and an array of electrical measurements. Annealing temperatures ≥500 °C result in thin films with low leakage-current densities (∼1 × 10(-8) A·cm(-2)) and dielectric constants ranging from 11.0 to 11.5. When incorporated as the gate dielectric layer in a-IGZO thin-film transistors (TFTs), LaAlO3 thin films annealed at 600 °C in air yielded TFTs with relatively low average mobilities (∼4.5 cm(2)·V(-1)·s(-1)) and high turn-on voltages (∼26 V). Interestingly, reannealing the LaAlO3 in 5%H2/95%N2 at 300 °C before deposition of a-IGZO channel layers resulted in TFTs with increased average mobilities (11.1 cm(2)·V(-1)·s(-1)) and lower turn-on voltages (∼6 V).

The effect of no naked pancreatic surface in the cavity of jejunum on pancreaticojejunostomy in 132 consecutive cases.

PubMed

Zhang, Fumin; Jin, Jichun; Jiang, Hao; Wang, Shiyang; Gu, Hanbao; Jin, Xinglin

2015-01-01

To prevent the pancreatic fistulas, we designed a technique termed "no naked pancreatic surface in the cavity of jejunum" on pancreaticojejunostomy. We adopted pancreatic exocrine secretions following the pancreatic duct by drainage; there was no naked pancreatic surface in the cavity of jejunum, and entail 2-3 cm sheath of the jejunum to the pancreatic stump. Only 3 (2.27%) cases developed pancreatic fistulas, 1 patient had a grade A leak, and 2 patients had grade B leakage. The overall morbidity was 25.76%. There was no dilatation of pancreatic duct or pancreatic enzyme deficiency shown during followed-up. The duration for accomplishing the anastomosis was 20 minutes averagely. The technique of no naked pancreatic surface in the cavity of jejunum can be routinely used in any case with pancreaticojejunostomy. It is a safe, simple, and effective technique that avoids the primary complication of anastomotic leakage.

SU-E-T-646: Quality Assurance of Truebeam Multi-Leaf Collimator Using a MLC QA Phantom

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, J; Lu, J; Hong, D

2015-06-15

Purpose: To perform a routine quality assurance procedure for Truebeam multi-leaf collimator (MLC) using MLC QA phantom, verify the stability and reliability of MLC during the treatment. Methods: MLC QA phantom is a specialized phantom for MLC quality assurance (QA), and contains five radio-opaque spheres that are embedded in an “L” shape. The phantom was placed isocentrically on the Truebeam treatment couch for the tests. A quality assurance plan was setted up in the Eclipse v10.0, the fields that need to be delivered in order to acquire the necessary images, the MLC shapes can then be obtained by the images.more » The images acquired by the electronic portal imaging device (EPID), and imported into the PIPSpro software for the analysis. The tests were delivered twelve weeks (once a week) to verify consistency of the delivery, and the images are acquired in the same manner each time. Results: For the Leaf position test, the average position error was 0.23mm±0.02mm (range: 0.18mm∼0.25mm). The Leaf width was measured at the isocenter, the average error was 0.06mm±0.02mm (range: 0.02mm∼0.08mm) for the Leaf width test. Multi-Port test showed the dynamic leaf shift error, the average error was 0.28mm±0.03mm (range: 0.2mm∼0.35mm). For the leaf transmission test, the average inter-leaf leakage value was 1.0%±0.17% (range: 0.8%∼1.3%) and the average inter-bank leakage value was 32.6%±2.1% (range: 30.2%∼36.1%). Conclusion: By the test of 12 weeks, the MLC system of the Truebeam is running in a good condition and the MLC system can be steadily and reliably carried out during the treatment. The MLC QA phantom is a useful test tool for the MLC QA.« less

Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Oder, Tom N.; Kundeti, Krishna C.; Borucki, Nicholas; Isukapati, Sundar B.

2017-12-01

Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes. Post deposition annealing at 500 oC for up to 60 hours in vacuum was carried to further improve the contact properties. Optimum barrier height of 1.13 eV and ideality factor of 1.04 was obtained in contacts deposited at 200 oC and annealed for 60 hours. Under a reverse voltage bias of 400 V, the average leakage current on these set of diodes was 6.6 x 10-8 A. Based on the x-ray diffraction analysis, TiC, Ti5Si3 and Ti3SiC2 were formed at the Ti/SiC interface. These results could be beneficial to improving the performance of 4H-SiC Schottky diodes for high power and high temperature applications.

Spectroscopic ellipsometry analysis of nanocrystalline silicon carbide obtained at low temperature

NASA Astrophysics Data System (ADS)

Kerdiles, S.; Madelon, R.; Rizk, R.

2001-12-01

Thin films of silicon carbide obtained by hydrogen-reactive magnetron sputtering with various substrate temperatures TS (100-600 °C) were analysed by transmission electron microscopy (TEM) and spectroscopic ellipsometry (SE). The TEM images show evidence of the growth of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) deposited at TS as low as 300 °C, with an average grain size of 4-5 nm. The SE spectra were reproduced by using the Forouhi-Bloomer model and assuming a 7 nm thick overlayer with a void fraction of 45%. The observed increase of the refractive index with TS is assigned to the improvement of both crystallinity and compactness of the layer. The expected increase of the optical gap seems to be offset by the drop of hydrogen content, leaving the gap unchanged. The fabrication and characteristics of nc-SiC:H/c-Si diode are finally described and the data indicate a good rectifying behaviour, together with a low leakage current.

Transparent and Flexible Capacitors with an Ultrathin Structure by Using Graphene as Bottom Electrodes.

PubMed

Guo, Tao; Zhang, Guozhen; Su, Xi; Zhang, Heng; Wan, Jiaxian; Chen, Xue; Wu, Hao; Liu, Chang

2017-11-28

Ultrathin, transparent and flexible capacitors using graphene as the bottom electrodes were directly fabricated on polyethylene naphthalate (PEN) substrates. ZrO₂ dielectric films were deposited on the treated surface of graphene by atomic layer deposition (ALD). The deposition process did not introduce any detectible defects in the graphene, as indicated by Raman measurements, guaranteeing the electrical performances of the graphene electrodes. The Aluminum-doped zinc oxide (AZO) films were prepared as the top electrodes using the ALD technique. The capacitors presented a high capacitance density (10.3 fF/μm² at 10 kHz) and a relatively low leakage current (5.3 × 10 -6 A/cm² at 1 V). Bending tests revealed that the capacitors were able to work normally at an outward bending radius of 10 mm without any deterioration of electrical properties. The capacitors exhibited an average optical transmittance of close to 70% at visible wavelengths. Thus, it opens the door to practical applications in transparent integrated circuits.

Transparent and Flexible Capacitors with an Ultrathin Structure by Using Graphene as Bottom Electrodes

PubMed Central

Guo, Tao; Zhang, Guozhen; Su, Xi; Zhang, Heng; Wan, Jiaxian; Chen, Xue; Wu, Hao; Liu, Chang

2017-01-01

Ultrathin, transparent and flexible capacitors using graphene as the bottom electrodes were directly fabricated on polyethylene naphthalate (PEN) substrates. ZrO2 dielectric films were deposited on the treated surface of graphene by atomic layer deposition (ALD). The deposition process did not introduce any detectible defects in the graphene, as indicated by Raman measurements, guaranteeing the electrical performances of the graphene electrodes. The Aluminum-doped zinc oxide (AZO) films were prepared as the top electrodes using the ALD technique. The capacitors presented a high capacitance density (10.3 fF/μm2 at 10 kHz) and a relatively low leakage current (5.3 × 10−6 A/cm2 at 1 V). Bending tests revealed that the capacitors were able to work normally at an outward bending radius of 10 mm without any deterioration of electrical properties. The capacitors exhibited an average optical transmittance of close to 70% at visible wavelengths. Thus, it opens the door to practical applications in transparent integrated circuits. PMID:29182551

Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on (\\bar{2}01) β-Ga2O3

NASA Astrophysics Data System (ADS)

Kasu, Makoto; Oshima, Takayoshi; Hanada, Kenji; Moribayashi, Tomoya; Hashiguchi, Akihiro; Oishi, Toshiyuki; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu

2017-09-01

A pixel array of vertical Schottky-barrier diodes (SBDs) was fabricated and measured on the surface of a (\\bar{2}01) β-Ga2O3 single crystal. Subsequently, etch pits and patterns were observed on the same surface. Three types of etch pits were discovered: (1) a line-shaped etch pattern originating from a void and extending toward the [010] direction, (2) an arrow-shaped etch pit whose arrow’s head faces toward the [102] direction and, (3) a gourd-shaped etch pit whose point head faces toward the [102] direction. Their average densities were estimated to be 5 × 102, 7 × 104, and 9 × 104 cm-2, respectively. We confirmed no clear relationship between the leakage current in SBDs and these crystalline defects. Such results are obtained because threading dislocations run mainly in the [010] growth direction and do not go through the (\\bar{2}01) sample plate.

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

PubMed Central

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; Bergstrom, Paul L.; Banyai, Douglas; Savaikar, Madhusudan A.; Jaszczak, John A.; Yap, Yoke Khin

2016-01-01

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (in-situ STM-TEM). As suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending. PMID:26846587

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

DOE PAGES

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; ...

2016-02-05

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under variousmore » bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (insitu STM-TEM). Ultimately, as suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.« less

New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under variousmore » bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (insitu STM-TEM). Ultimately, as suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.« less

Ferroelectric polymer-ceramic composite thick films for energy storage applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Paritosh; Borkar, Hitesh; Singh, B. P.

2014-08-15

We have successfully fabricated large area free standing polyvinylidene fluoride -Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PVDF-PZT) ferroelectric polymer-ceramic composite (wt% 80–20, respectively) thick films with an average diameter (d) ∼0.1 meter and thickness (t) ∼50 μm. Inclusion of PZT in PVDF matrix significantly enhanced dielectric constant (from 10 to 25 at 5 kHz) and energy storage capacity (from 11 to 14 J/cm{sup 3}, using polarization loops), respectively, and almost similar leakage current and mechanical strength. Microstructural analysis revealed the presence of α and β crystalline phases and homogeneous distribution of PZT crystals in PVDF matrix. It was also found that apartmore » from the microcrystals, well defined naturally developed PZT nanocrystals were embedded in PVDF matrix. The observed energy density indicates immense potential in PVDF-PZT composites for possible applications as green energy and power density electronic elements.« less

Low Temperature Noise and Electrical Characterization of the Company Heterojunction Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Cunningham, Thomas J.; Gee, Russell C.; Fossum, Eric R.; Baier, Steven M.

1993-01-01

This paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4K, including the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage.

Light intensity-voltage correlations and leakage-current excess noise in a single-mode semiconductor laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurin, I.; Bramati, A.; Giacobino, E.

2005-09-15

Semiconductor lasers are particularly well suited for the implementation of pump-noise suppression, yielding a reduction of the intensity noise in the laser. In this simple picture, the maximal amount of squeezing is equal to the quantum efficiency. However, experimental results on intensity noise reduction by pump-noise suppression are usually above this limit. This discrepancy suggests that additional noise sources must be involved. Here we successful y interpret the full noise behavior of a single-mode laser diode far above threshold by considering two excess noise sources: the leakage current fluctuations across the laser and the Petermann excess noise. We have estimatedmore » the contribution of each noise source using the results of the correlations between the laser output intensity noise and the voltage fluctuations across the laser diode (light-voltage correlations) and obtained good agreement between our theory and experimental results.« less

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel.

PubMed

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na + /K + -ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K + -battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

The improvement of retention time of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor transistors and capacitors by leakage current reduction using surface treatment

NASA Astrophysics Data System (ADS)

Shih, Wen-Chieh; Kang, Kun-Yung; Lee, Joseph Ya-Min

2007-11-01

Metal-ferroelectric-insulator-semiconductor transistors (MFISFETs) and capacitors with the structure of Al /Pb (Zr0.53,Ti0.47) O3/ZrO2/Si were fabricated. The wafers were pretreated with H2O2 before ZrO2 deposition and/or post-treated with HCl after ZrO2 deposition. The leakage current density at 5V is reduced from 10-1to5×10-6A /cm2. The subthreshold slope was improved to 91mV/decade. The MFISFETs maintain a threshold voltage window of about 1.1V after an elapsed time of 3000s. The mobility is 267cm2/Vs. The improvements are most likely due to the reduction of interfacial layer thickness and the interface states at the ZrO2/Si interface.

Effect of high-pressure H{sub 2}O treatment on elimination of interfacial GeO{sub X} layer between ZrO{sub 2} and Ge stack

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Chen-Shuo; Liu, Po-Tsun

2011-08-22

This investigation demonstrates the effect of high-pressure H{sub 2}O treatment on the elimination of the interfacial germanium suboxide (GeO{sub X}) layer between ZrO{sub 2} and Ge. The formation of GeO{sub X} interlayer increases the gate-leakage current and worsen the controllability of the gate during deposition or thermal cycles. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy reveal that high-pressure H{sub 2}O treatment eliminates the interfacial GeO{sub X} layer. The physical mechanism involves the oxidation of non-oxidized Zr with H{sub 2}O and the reduction of GeO{sub X} by H{sub 2}. Treatment with H{sub 2}O reduces the gate-leakage current of a ZrO{submore » 2}/Ge capacitor by a factor of 1000.« less

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel

NASA Astrophysics Data System (ADS)

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na+/K+-ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K+-battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films

NASA Astrophysics Data System (ADS)

Ahn, C. W.; Y Lee, S.; Lee, H. J.; Ullah, A.; Bae, J. S.; Jeong, E. D.; Choi, J. S.; Park, B. H.; Kim, I. W.

2009-11-01

We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V-1, which is comparable to that of polycrystalline PZT thin films.

A comparison of lightning and nuclear electromagnetic pulse response of tactical shelters

NASA Technical Reports Server (NTRS)

Perala, R. A.; Rudolph, T. H.; Mckenna, P. M.

1984-01-01

The internal response (electromagnetic fields and cable responses) of tactical shelters is addressed. Tactical shelters are usually well-shielded systems. Apart from penetrations by signal and power lines, the main leakage paths to the interior are via seams and the environment control unit (ECU) honeycomb filter. The time domain in three-dimensional finite-difference technique is employed to determine the external and internal coupling to a shelter excited by nuclear electromagnetic pulses (NEMP) and attached lightning. The responses of interest are the internal electromagnetic fields and the voltage, current, power, and energy coupled to internal cables. Leakage through the seams and ECU filter is accomplished by their transfer impedances which relate internal electric fields to external current densities. Transfer impedances which were experimentally measured are used in the analysis. The internal numerical results are favorably compared to actual shelter test data under simulated NEMP illumination.

Development of a low-noise, 4th-order readout ASIC for CdZnTe detectors in gamma spectrometer applications

NASA Astrophysics Data System (ADS)

Wang, Jia; Su, Lin; Wei, Xiaomin; Zheng, Ran; Hu, Yann

2016-09-01

This paper presents an ASIC readout circuit development, which aims to achieve low noise. In order to compensate the leakage current and improve gain, a dual-stage CSA has been utilized. A 4th-order high-linearity shaper is proposed to obtain a Semi-Gaussian wave and further decrease the noise induced by the leakage current. The ASIC has been designed and fabricated in a standard commercial 2P4M 0.35 μm CMOS process. Die area of one channel is about 1190 μm×147 μm. The input charge range is 1.8 fC. The peaking time can be adjusted from 1 μs to 3 μs. Measured ENC is about 55e- (rms) at input capacitor of 0 F. The gain is 271 mV/fC at the peaking time of 1 μs.

Zirconium doped TiO{sub 2} thin films: A promising dielectric layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Arvind; Mondal, Sandip, E-mail: sandipmondal@physics.iisc.ernet.in; Rao, K. S. R. Koteswara

2016-05-06

In the present work, we have fabricated the zirconium doped TiO{sub 2} thin (ZTO) films from a facile spin – coating method. The addition of Zirconium in TiO{sub 2} offers conduction band offset to Si and consequently decreased the leakage current density by approximately two orders as compared to pure TiO{sub 2} thin (TO) films. The ZTO thin film shows a high dielectric constant 27 with a very low leakage current density ∼10{sup −8} A/cm{sup 2}. The oxide capacitate, flat band voltage and change in flat band voltage are 172 pF, -1.19 V and 54 mV. The AFM analysis confirmed the compactmore » and pore free flat surface. The RMS surface roughness is found to be 1.5 Å. The ellipsometry analysis also verified the fact with a high refractive index 2.21.« less

4H-SiC UV Photo Detector with Large Area and Very High Specific Detectivity

NASA Technical Reports Server (NTRS)

Yan, Feng; Shahid, Aslam; Franz, David; Xin, Xiaobin; Zhao, Jian H.; Zhao, Yuegang; Winer, Maurice

2004-01-01

Pt/4H-SiC Schottky photodiodes have been fabricated with the device areas up to 1 sq cm. The I-V characteristics and photo-response spectra have been measured and analyzed. For a 5 mm x 5 mm area device leakage current of 1 x 10(exp 15)A at zero bias and 1.2 x 10(exp 14)A at -IV have been established. The quantum efficiency is over 30% from 240nm to 320nm. The specific detectivity, D(sup *), has been calculated from the directly measured leakage current and quantum efficiency data and are shown to be higher than 10(exp 15) cmHz(sup 1/2)/W from 210nm to 350nm with a peak D(sup *) of 3.6 x 10(exp 15)cmH(sup 1/2)/W at 300nm.

Public Housing: A Tailored Approach to Energy Retrofits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dentz, J.; Conlin, F.; Podorson, D.

2014-06-01

Over one million HUD-supported public housing units provide rental housing for eligible low-income families across the country. A survey of over 100 PHAs across the country indicated that there is a high level of interest in developing low cost solutions that improve energy efficiency and can be seamlessly included in the refurbishment process. Further, PHAs, have incentives (both internal and external) to reduce utility bills. ARIES worked with two public housing authorities (PHAs) to develop packages of energy efficiency retrofit measures the PHAs can cost effectively implement with their own staffs in the normal course of housing operations at themore » time when units are refurbished between occupancies. The energy efficiency turnover protocols emphasized air infiltration reduction, duct sealing and measures that improve equipment efficiency. ARIES documented implementation in ten housing units. Reductions in average air leakage were 16-20% and duct leakage reductions averaged 38%. Total source energy consumption savings was estimated at 6-10% based on BEopt modeling with a simple payback of 1.7 to 2.2 years. Implementation challenges were encountered mainly related to required operational changes and budgetary constraints. Nevertheless, simple measures can feasibly be accomplished by PHA staff at low or no cost. At typical housing unit turnover rates, these measures could impact hundreds of thousands of unit per year nationally.« less

Manganese biogeochemistry in a central Czech Republic catchment

USGS Publications Warehouse

Navratil, T.; Shanley, J.B.; Skrivan, P.; Kram, P.; Mihaljevic, M.; Drahota, P.

2007-01-01

Mn biogeochemistry was studied from 1994 to 2003 in a small forested catchment in the central Czech Republic using the watershed mass balance approach together with measurements of internal stores and fluxes. Mn inputs in bulk deposition were relatively constant during a period of sharply decreasing acidic deposition, suggesting that the Mn source was terrestrial, and not from fossil fuel combustion. Mn inputs in bulk deposition and Mn supplied by weathering each averaged 13 mg m-2 year-1 (26 mg m -2 year-1 total input), whereas Mn export in streamwater and groundwater averaged 43 mg m-2 year-1. Thus an additional Mn source is needed to account for 17 mg m-2 year -1. Internal fluxes and pools of Mn were significantly greater than annual inputs and outputs. Throughfall Mn flux was 70 mg m-2 year-1, litterfall Mn flux was 103 mg m-2 year -1, and Mn net uptake by vegetation was 62 mg m-2 year-1. Large pools of labile or potentially labile Mn were present in biomass and surficial soil horizons. Small leakages from these large pools likely supply the additional Mn needed to close the watershed mass balance. This leakage may reflect an adjustment of the ecosystem to recent changes in atmospheric acidity. ?? 2007 Springer Science+Business Media B.V.

Flowfield and heat transfer past an unshrouded gas turbine blade tip with different shapes

NASA Astrophysics Data System (ADS)

Liu, Jian-Jun; Li, Peng; Zhang, Chao; An, Bai-Tao

2013-04-01

This paper describes the numerical investigations of flow and heat transfer in an unshrouded turbine rotor blade of a heavy duty gas turbine with four tip configurations. By comparing the calculated contours of heat transfer coefficients on the flat tip of the HP turbine rotor blade in the GE-E3 aircraft engine with the corresponding experimental data, the κ-ω turbulence model was chosen for the present numerical simulations. The inlet and outlet boundary conditions for the turbine rotor blade are specified as the real gas turbine, which were obtained from the 3D full stage simulations. The rotor blade and the hub endwall are rotary and the casing is stationary. The influences of tip configurations on the tip leakage flow and blade tip heat transfer were discussed. It's showed that the different tip configurations changed the leakage flow patterns and the pressure distributions on the suction surface near the blade tip. Compared with the flat tip, the total pressure loss caused by the leakage flow was decreased for the full squealer tip and pressure side squealer tip, while increased for the suction side squealer tip. The suction side squealer tip results in the lowest averaged heat transfer coefficient on the blade tip compared to the other tip configurations.

Regional evaluation of hydrologic factors and effects of pumping, St Peter-Jordan aquifer, Iowa

USGS Publications Warehouse

Burkart, M.R.; Buchmiller, Robert

1990-01-01

Pumping has caused changes in the flow system that include regional declines in the potentiometric surface of the aquifer. Simulation indicates that pumping through 1980 increased net vertical leakage into the aquifer to about double the predevelopment rate. Discharge across lateral boundaries has been substantially reduced or reversed by pumping. Aquifer storage provided about one-third of the water required to supply pumping in the 1970's. Simulation of future conditions, assuming no increase in pumping rates, indicates that the rate of decline in water levels will decrease by the year 2020. As equilibrium with pumping is approached in 2020, 75 percent of the pumpage will be balanced by vertical leakage, eight percent by water released from aquifer storage, and 17 percent by increases in boundary recharge or decreases in boundary discharge. Future pumping at an increasing rate of about 10 percent per decade of the average pumping rate in 1975 will require about one and one-half times the vertical leakage of the 1971-1980 period and about fivetimes the net inflow from lateral boundaries; however, the rate of water released from aquifer storage will be about half the 1970's rate. Under these conditions, the head in the aquifer will continue to decline at an almost constant rate until 2020.

Effects of surface-water and groundwater inflows and outflows on the hydrology of the Tsala Apopka Lake Basin in Citrus County, Florida

USGS Publications Warehouse

Sepúlveda, Nicasio; Fulkerson, Mark; Basso, Ron; Ryan, Patrick J.

2018-05-21

The U.S. Geological Survey, in cooperation with the Southwest Florida Water Management District, initiated a study to quantify the inflows and outflows in the Floral City, Inverness, and Hernando pools of the Tsala Apopka Lake Basin in Citrus County, Florida. This study assesses hydrologic changes in pool stages, groundwater levels, spring flows, and streamflows caused by the diversion of streamflow from the Withlacoochee River to the Tsala Apopka Lake Basin through water-control structures. A surface-water/groundwater flow model was developed using hydraulic parameters for lakes, streams, the unsaturated zone, and the underlying surficial and Upper Floridan aquifers estimated using an inverse modeling calibration technique. After calibration, the model was used to assess the relation between inflows and outflows in the Tsala Apopka Lake Basin and changes in pool stages.Simulation results using the calibrated surface-water/groundwater flow model showed that leakage rates from the pools to the Upper Floridan aquifer were largest at the deep lake cells and that these leakage rates to the Upper Floridan aquifer were the highest in the model area. Downward leakage to the Upper Floridan aquifer occurred beneath most of the extent of the Floral City, Inverness, and Hernando pools. These leakage rates depended on the lakebed leakance and the difference between lake stages and heads in the Upper Floridan aquifer. Leakage rates were higher for the Floral City pool than for the Inverness pool, and higher for the Inverness pool than for the Hernando pool. Lakebed leakance was higher for the Floral City pool than for the Hernando pool, and higher for the Hernando pool than for the Inverness pool.Simulation results showed that the average recharge rate to the surficial aquifer was 10.3 inches per year for the 2004 to 2012 simulation period. Areas that recharge the surficial aquifer covered about 86 percent of the model area. Simulations identified areas along segments of the Withlacoochee River and within land-surface depressions that receive water from the surficial aquifer. Recharge rates were largest in physiographic regions having a deep water table. Simulated heads in the Upper Floridan aquifer indicated the general flow directions in the active flow model area were from the northeast toward the southwest and then westward toward the coast, and from the southeast toward the northwest and then westward toward the coast, consistent with flow directions inferred from the estimated potentiometric surface map for May 2010. The largest inflow in the water budget of the Upper Floridan aquifer was downward leakage from the overlying hydrogeologic unit. The largest outflow in the water budget of the Upper Floridan aquifer was spring flow.The calibrated surface-water and groundwater flow model was used to simulate hydrologic scenarios that included changes in rainfall rates, projected increases in groundwater pumping rates for 2025 and 2035, no flow for the 2004–12 period through the eight water-control structures in the Tsala Apopka Lake Basin, and the removal of the Inglis Dam and the Inglis Bypass Spillway on Lake Rousseau. Scenario simulation results were compared to annual average calibrated water levels and flows from 2004 to 2012. Simulated declines in the Tsala Apopka Lake pool stages under the 10-percent lower rainfall scenario were about 0.8, 0.3, and 1.3 feet (ft) for the Floral City, Inverness, and Hernando pools, respectively. Simulated groundwater levels under the same scenario declined up to 5.4 ft in the surficial aquifer and up to 2.9 ft in the Upper Floridan aquifer. Under the projected increases in groundwater pumping rates for 2035 that represented an increase of 36 percent from average 2004 to 2012 pumping rates, the simulated declines in the Floral City, Inverness, and Hernando pool stages were, in downstream order, 0.02, 0.06, and 0.04 ft. The largest drawdown under the projected increases in groundwater pumping rates for 2035 was 2.1 ft in the surficial aquifer and about 1.8 ft in the Upper Floridan aquifer. A scenario of decreased rainfall by 10 percent caused greater declines in water levels and pool stages than projected increases in groundwater pumping rates. The simulation with no flow through the eight Tsala Apopka Lake water-control structures resulted in simulated declines in average pool stage of 1.8, 1.9, and 0.5 ft in the Floral City, Inverness, and Hernando pools, respectively. The simulated removal of the two water-control structures in Lake Rousseau caused flow to increase at Rainbow Springs by 28 cubic feet per second, an increase of 4.7 percent from the average calibrated flow for 2004 to 2012.

Highly temperature insensitive, low threshold-current density (λ = 8.7–8.8 μm) quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirch, J. D.; Chang, C.-C.; Boyle, C.

2015-04-13

By stepwise tapering, both the barrier heights and quantum-well depths in the active regions of 8.7–8.8 μm-emitting quantum-cascade-laser (QCL) structures, virtually complete carrier-leakage suppression is achieved. Such step-taper active-region-type QCLs possess, for 3 mm-long devices with high-reflectivity-coated back facets, threshold-current characteristic temperature coefficients, T{sub 0}, as high as 283 K and slope-efficiency characteristic temperature coefficients, T{sub 1}, as high as 561 K, over the 20–60 °C heatsink-temperature range. These high T{sub 0} and T{sub 1} values reflect at least a factor of four reduction in carrier-leakage current compared to conventional 8–9 μm-emitting QCLs. Room temperature, pulsed, threshold-current densities are 1.58 kA/cm{sup 2}; values comparable to those formore » 35-period conventional QCLs of similar injector-region doping level. Superlinear behavior of the light-current curves is shown to be the result of the onset of resonant extraction from the lower laser level at a drive level of ∼1.3× threshold. Maximum room-temperature slope efficiencies are 1.23 W/A; that is, slope efficiency per period values of 35 mW/A, which are 37%–40% higher than for same-geometry conventional 8–9 μm-emitting QCLs. Since the waveguide-loss coefficients are very similar, we estimate that the internal differential efficiency is at least 30% higher than in conventional QCLs. Such high internal differential efficiency values reflect the combined effect of nearly complete carrier-leakage suppression and high differential efficiency of the laser transition (∼90%), due to resonant extraction from the lower laser level.« less

Atmospheric Tracer Depletion Testing for Unfiltered Air In-Leakage Determination at the Wolf Creek Nuclear Power Plant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, T. M.; Wilke, R. J.; Roberts, T.

Atmospheric Tracer Depletion tests were conducted at the Wolf Creek Nuclear Power Plant to quantify the unfiltered in-leakage (UI) into the Control Room (CR), Control Building (CB), and Equipment Rooms (ER) at the Wolf Creek Nuclear Power Plant. Wolf Creek has two independent charcoal filter Emergency Ventilation Systems (EVS) that can be used to purify air entering the control building and control room. The Bravo System contains a filtration system in Room 1501 in the Auxiliary Building for the Control Room and another filtration system (FGK02B) on Elevation 2016 for the Control Building. The Alpha system contains a filtration systemmore » in Room 1512 in the Auxiliary Building for the Control Room and another filtration system (FGK02A) on Elevation 2016 for the Control Building. The Atmospheric Tracer Depletion (ATD) test is a technique to measure in-leakage using the concentration of perfluorocarbon compounds that have a constant atmospheric background. These levels are present in the Control Room and Control Building under normal operating conditions. When air is supplied by either of the EVS, most of the PFTS are removed by the charcoal filters. If the concentrations of the PFTs measured in protected areas are the same as the levels at the output of the EVS, the in-leakage of outside air into the protected area would be zero. If the concentration is higher in the protected area than at the output of the filter system, there is in-leakage and the in-leakage can be quantified by the difference. Sampling was performed using state-of-the-art Brookhaven Atmospheric Tracer Samplers (BATS) air sampling equipment and analysis performed on Brookhaven National Laboratory (BNL) dedicated PFT analytical systems. In the Alpha test two tracers PMCH and mcPDCH were used to determine in-leakage into the control building. The analytical system was tuned to maximize sensitivity after initial analysis of the Alpha test. The increased sensitivity permitted accurate quantification of five isomers of the PFT PDCH (mtPDCH, pcPDCH, otPDCH, mcPDCH, and ptPDCH). These isomers were quantified in the low concentration samples in the Alpha test and in all samples in the Bravo test. The best estimates of UI (Rui) for the four zones are provided in Table ES-1. For the CB, this estimate averages the four tracers at the four elevations. For the CR, this estimate uses the four sampling units located in the Control Room.« less

Atmospheric Tracer Depletion Testing for Unfiltered Air In-Leakage Determination at the Wolf Creek Nuclear Power Plant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, T. M.; Wilke, R. J.; Roberts, T.

Atmospheric Tracer Depletion tests were conducted at the Wolf Creek Nuclear Power Plant to quantify the unfiltered in-leakage (UI) into the Control Room (CR), Control Building (CB), and Equipment Rooms (ER) at the Wolf Creek Nuclear Power Plant. Wolf Creek has two independent charcoal filter Emergency Ventilation Systems (EVS) that can be used to purify air entering the control building and control room. The Bravo System contains a filtration system in Room 1501 in the Auxiliary Building for the Control Room and another filtration system (FGK02B) on Elevation 2016 for the Control Building. The Alpha system contains a filtration systemmore » in Room 1512 in the Auxiliary Building for the Control Room and another filtration system (FGK02A) on Elevation 2016 for the Control Building.The Atmospheric Tracer Depletion (ATD) test is a technique to measure in-leakage using the concentration of perfluorocarbon compounds that have a constant atmospheric background. These levels are present in the Control Room and Control Building under normal operating conditions. When air is supplied by either of the EVS, most of the PFTS are removed by the charcoal filters. If the concentrations of the PFTs measured in protected areas are the same as the levels at the output of the EVS, the in-leakage of outside air into the protected area would be zero. If the concentration is higher in the protected area than at the output of the filter system, there is in-leakage and the in-leakage can be quantified by the difference.Sampling was performed using state-of-the-art Brookhaven Atmospheric Tracer Samplers (BATS) air sampling equipment and analysis performed on Brookhaven National Laboratory (BNL) dedicated PFT analytical systems. In the Alpha test two tracers PMCH and mcPDCH were used to determine in-leakage into the control building. The analytical system was tuned to maximize sensitivity after initial analysis of the Alpha test. The increased sensitivity permitted accurate quantification of five isomers of the PFT PDCH (mtPDCH, pcPDCH, otPDCH, mcPDCH, and ptPDCH). These isomers were quantified in the low concentration samples in the Alpha test and in all samples in the Bravo test.The best estimates of UI (Rui) for the four zones are provided in Table ES-1. For the CB, this estimate averages the four tracers at the four elevations. For the CR, this estimate uses the four sampling units located in the Control Room.« less

Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

NASA Astrophysics Data System (ADS)

Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

2018-04-01

For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

Contribution of ethylenetetrafluoroethylene (ETFE) insulation to the electrical performance of Riata® silicone leads having externalized conductors.

PubMed

Fischer, Avi; Klehn, Russell

2013-08-01

The insulation of St. Jude Medical Riata® leads contains a polytetrafluoroethylene (PTFE) liner, silicone tubing, and ethylenetetrafluoroethylene (ETFE) coating on individual cable conductors. ETFE has sufficient dielectric strength to assure electrical function. This investigation intended to analyze performance of leads with and without externalized conductors and with intact and breached ETFE. Testing was performed on ETFE-coated conductors to determine their ability to deliver high-voltage therapy. Tests were performed on samples under different conditions and current leakage was measured. A high-voltage test and a cyclic pulse test were performed, and the effect of lead modifications on the potential gradient from a high-voltage shock was used to determine functionality. Measurements from modified Riata® leads were compared with a control lead with all insulation and conducting elements intact. Current leakage for all conditions tested, was within the acceptance criteria for the high-voltage test and the cyclic pulse test. In conductors that underwent cyclic testing, the highest value of current leakage was within the limit of acceptability for both phases of the test. Testing of leads with externalized conductors and breached ETFE showed similar potential gradients compared with a control lead. Testing of ETFE-coated conductors following multiple preconditioning steps showed that ETFE serves as a redundant layer of insulation. In the event that the ETFE coating is breached, the potential gradient seen resulting from a high-voltage defibrillation shock was similar to a lead with no breach to the ETFE, even after 100 shocks.

Are there risk factors that increase the rate of staple line leakage in patients undergoing primary sleeve gastrectomy for morbid obesity?

PubMed

Benedix, Frank; Benedix, Diana D; Knoll, Christian; Weiner, Rudolf; Bruns, Christiane; Manger, Thomas; Stroh, Christine

2014-10-01

Laparoscopic sleeve gastrectomy (LSG) is currently being performed with increasing frequency worldwide. It offers an excellent weight loss and resolution of comorbidities in the short term with a very low incidence of complications. However, the ever present risk of a staple line leak is still a major concern. Since 2005, data from obese patients that undergo bariatric procedures in Germany are prospectively registered in an online database and analyzed at the Institute of Quality Assurance in Surgical Medicine. For the current analysis, all patients that had undergone primary sleeve gastrectomy for morbid obesity within a 7-year period were considered. Using the GBSR, data from 5.400 LSGs were considered for analysis. Staple line leak rate decreased during the study period from 6.5 to 1.4 %. Male gender, higher BMI, concomitant sleep apnea, conversion to laparotomy, longer operation time, use of both buttresses and oversewing, and the occurrence of intraoperative complications were associated with a significantly higher leakage rate. On multivariate analysis, operation time and year of procedure only had a significant impact on staple line leak rate. The results of the current study demonstrated that there are factors that increase the risk of a leakage which would enable surgeons to define risk groups, to more carefully select patients, and to offer a closer follow-up during the postoperative course with early recognition and adequate treatment. All future efforts should be focused on a further reduction of serious complications to make the LSG a widely accepted and safer procedure.

Irradiation study of UV Silicon Photomultipliers for the Mu2e calorimeter

NASA Astrophysics Data System (ADS)

Baccaro, S.; Cemmi, A.; Cordelli, M.; Diociaiuti, E.; Donghia, R.; Ferrari, A.; Giovannella, S.; Loreti, S.; Miscetti, S.; Müller, S.; Pillon, M.; Sarra, I.

2017-02-01

The Mu2e calorimeter is composed of 1400 un-doped CsI crystals, coupled to large area UV extended Silicon Photomultipliers (SiPMs), arranged in two annular disks. This calorimeter has to provide precise information on energy, timing and position resolutions. It should also be fast enough to handle the high rate background and it must operate and survive in the high radiation environment. Simulation studies estimated that, in the highest irradiated regions, each photo-sensor will absorb a dose of 20 krad and will be exposed to a neutron fluency of 5.5×1011n1 MeV/cm2 in three years of running, with a safety factor of 3 included. At the end of 2015, we have concluded an irradiation campaign at the Frascati Neutron Generator (FNG, Frascati, Italy) measuring the response of two different 16 array models from Hamamatsu, which differ for the protection windows and a SiPM from FBK. In 2016, we have carried out two additional irradiation campaigns with neutrons and photons at the Helmholtz-Zentrum Dresden-Rossendorf (HZDR, Dresden, Germany) and at the Calliope gamma irradiation facility at ENEA-Casaccia, respectively. A negligible increment of the leakage current and no gain change have been observed with the dose irradiation. On the other hand, at the end of the neutron irradiation, the gain does not show large changes whilst the leakage current increases by around a factor of 2000. In these conditions, the too high leakage current makes problematic to bias the SiPMs, thus requiring to cool them down to a running temperature of ~0oC.

Impact of the Agulhas Return Current on the glacial Subantarctic region in the South Indian Ocean

NASA Astrophysics Data System (ADS)

Ikehara, M.; Crosta, X.; Manoj, M. C.

2017-12-01

The Southern Ocean has played an important role in the evolution of the global climate system. The Southern Ocean circulation is dominated by the Antarctic Circumpolar Current (ACC), the world's longest and largest current system. Sea ice coverage on sea surface strongly affects the climate of the Southern Hemisphere through its impacts on the energy and gas budget, on the atmospheric circulation, on the hydrological cycle, and on the biological productivity. The Agulhas Return Current (ARC) originates from the Agulhas Current, the major western boundary current in the Indian Ocean, and transports heat from subtropical to subantarctic region. It's thought that the Agulhas leakage from the Indian Ocean to the Atlantic was reduced for the last glacial due to a northward shift of the westerlies and ACC, however, there are still unknown yet how the ARC was responded to the reduced Agulhas leakage. A piston core DCR-1PC was collected from the Del Caño Rise (46°S, 44°E, 2632m), Indian sector of the Southern Ocean. Core site located in the Subantarctic region between the Subtropical Front (STF) and Subantarctic Front (SAF). Age model of the core was established by radiocarbon dating of planktic foraminifer Globorotalia bulloides and oxygen isotope stratigraphy of benthic foraminifers Cibicidoides wuellerstorfi and Melonis bareelanus. Sediment of DCR-1PC show the cyclic changes of diatom/carbonate ooze sedimentation corresponding to Southern Ocean fronts' migrations on glacial-interglacial timescales. Records of ice-rafted debris (IRD) and oxygen isotope in planktic foraminfer G. bulloides suggest that the melting of sea ice was significantly increased during the last glacial maximum (LGM) in the Subantarctic surface water. Diatom assemblage based summer SST also shows the relative warmer condition in the Subantarctic during the LGM. These results might be explained by the strong influence of the Agulhas Return Current during the LGM in the Subantarctic. The reduced Agulhas leakage due to a northward shift of the westerlies and ACC impacted significantly on sea ice melting in the glacial Subantarctic region in the South Indian Ocean.

Direct DC 10 V comparison between two programmable Josephson voltage standards made of niobium nitride (NbN)-based and niobium (Nb)-based Josephson junctions

NASA Astrophysics Data System (ADS)

Solve, S.; Chayramy, R.; Maruyama, M.; Urano, C.; Kaneko, N.-H.; Rüfenacht, A.

2018-04-01

BIPM’s new transportable programmable Josephson voltage standard (PJVS) has been used for an on-site comparison at the National Metrology Institute of Japan (NMIJ) and the National Institute of Advanced Industrial Science and Technology (AIST) (NMIJ/AIST, hereafter called just NMIJ unless otherwise noted). This is the first time that an array of niobium-based Josephson junctions with amorphous niobium silicon Nb x Si1-x barriers, developed by the National Institute of Standards and Technology4 (NIST), has been directly compared to an array of niobium nitride (NbN)-based junctions (developed by the NMIJ in collaboration with the Nanoelectronics Research Institute (NeRI), AIST). Nominally identical voltages produced by both systems agreed within 5 parts in 1012 (0.05 nV at 10 V) with a combined relative uncertainty of 7.9  ×  10-11 (0.79 nV). The low side of the NMIJ apparatus is, by design, referred to the ground potential. An analysis of the systematic errors due to the leakage current to ground was conducted for this ground configuration. The influence of a multi-stage low-pass filter installed at the output measurement leads of the NMIJ primary standard was also investigated. The number of capacitances in parallel in the filter and their insulation resistance have a direct impact on the amplitude of the systematic voltage error introduced by the leakage current, even if the current does not necessarily return to ground. The filtering of the output of the PJVS voltage leads has the positive consequence of protecting the array from external sources of noise. Current noise, when coupled to the array, reduces the width or current range of the quantized voltage steps. The voltage error induced by the leakage current in the filter is an order of magnitude larger than the voltage error in the absence of all filtering, even though the current range of steps is significantly decreased without filtering.

Simulating CO₂ leakages from CCS to determine Zn toxicity using the marine microalgae Pleurochrysis roscoffensis.

PubMed

Bautista-Chamizo, Esther; De Orte, Manoela Romanó; DelValls, Tomás Ángel; Riba, Inmaculada

2016-02-01

Due to the current climate change and ocean acidification, a new technology for CO2 mitigation has been proposed, the Carbon dioxide Capture and Storage (CCS). However, there is an ecological risk associated with potential CO2 leakages from the sub-seabed storages sites. To evaluate the effects related to CO2 leakages, laboratory-scales experiments were performed using the marine microalgae Pleurochrysis roscoffensis. Five Zn concentrations were tested at different pHs to study Zn toxicity under acidified conditions. Seawater was collected and submitted to acidification by means of CO2 injection and by HCl addition. Results showed differences between both acidification techniques: while microalgae growth was enhanced by CO2 supply, reaching the optimal growth at pH 6.5 and full inhibition at pH 5.5, HCl acidification growth was inhibited at pH 6.5. Although small concentrations of Zn were positive for P. roscoffensis growth, Zn toxicity increased at lower pHs, and more severely on samples acidified with HCl. The conclusions obtained in this work are useful to address the potential effects on the marine ecosystem related to changes in metal bioavailability during CO2 leakages scenarios. Copyright © 2015 Elsevier Ltd. All rights reserved.

Design of a Vertical Composite Thin Film System with Ultralow Leakage To Yield Large Converse Magnetoelectric Effect.

PubMed

Wu, Rui; Kursumovic, Ahmed; Gao, Xingyao; Yun, Chao; Vickers, Mary E; Wang, Haiyan; Cho, Seungho; MacManus-Driscoll, Judith L

2018-05-30

Electric field control of magnetism is a critical future technology for low-power, ultrahigh density memory. However, despite intensive research efforts, no practical material systems have emerged. Interface-coupled, composite systems containing ferroelectric and ferri-/ferromagnetic elements have been widely explored, but they have a range of problems, for example, substrate clamping, large leakage, and inability to miniaturize. In this work, through careful material selection, design, and nanoengineering, a high-performance room-temperature magnetoelectric system is demonstrated. The clamping problem is overcome by using a vertically aligned nanocomposite structure in which the strain coupling is independent of the substrate. To overcome the leakage problem, three key novel advances are introduced: a low leakage ferroelectric, Na 0.5 Bi 0.5 TiO 3 ; ferroelectric-ferrimagnetic vertical interfaces which are not conducting; and current blockage via a rectifying interface between the film and the Nb-doped SrTiO 3 substrate. The new multiferroic nanocomposite (Na 0.5 Bi 0.5 TiO 3 -CoFe 2 O 4 ) thin-film system enables, for the first time, large-scale in situ electric field control of magnetic anisotropy at room temperature in a system applicable for magnetoelectric random access memory, with a magnetoelectric coefficient of 1.25 × 10 -9 s m -1 .

Conductive paths through polycrystalline BaTiO{sub 3}: Scanning probe microscopy study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ayvazian, Talin; Bersuker, Gennadi; Lingley, Zachary R.

2016-08-15

The microstructural features determining the leakage current through polycrystalline BaTiO{sub 3} films are investigated using Conductive Atomic Force Microscopy. Grain boundaries are found to be the dominant conductive paths compared to the conduction through the grains. Grain boundary currents are observed to reversibly rise with the increase of the applied DC voltages, indicating that the current is controlled by a field-activated charge transport process.

A method to estimate canal leakage to the Biscayne Aquifer, Dade County, Florida

USGS Publications Warehouse

Chin, D.A.

1990-01-01

The leakage characteristics of channels that partially penetrate the Biscayne aquifer and have reduced bed permeability were studied. Leakage characteristics were described in terms of a reach transmissivity-defined as the volume flow rate out of the channel per unit length of the channel per unit drawdown, where drawdown is defined as the difference in altitude between the water surface in the canal and the water table in the adjacent aquifer. A theoretical expression was developed to relate the reach transmissivity to the transmissivity of the formation, mean channel width, distance of drawdown measurement from the channel centerline, ratio of drawdowns on both sides of the channel, and local reach transmissivity associated with reduced bed permeability. This theoretical expression was verified using a fine-scale numerical model, which gave accurate results when drawdowns were measured beyond 10 aquifer depths from the side of the channel. Using the theoretical formulation, it is shown that the reach transmissivity employed in regional ground-water models, which are based on average drawdowns within a cell, depends on the size of the cell as well as the transmissivity of the formation, channel width, and local reach transmissivity due to reduced bed permeability. The theoretical reach transmissivity function was compared with field measurements at L-31N Canal and Snapper Creek Extension Canal in Dade County, Florida. Analyses of the data for both canals showed good agreement between the estimated and measured reach transmissivities. At L- 31N Canal, field measurements indicated that the local reach transmissivity was relatively uniform over a 2-mile reach of the channel (averaging 630 cubic feet per second per mile per foot), and the formation transmissivity was 1.8 x106 feet squared per day. At Snapper Creek Extension Canal, an approximate analysis was necessary due to the inability of the acoustic velocity meter to measure very low water velocities in the channel. Assuming an aquifer transmissivity of 1 x 106 feet squared per day, drawdown measurements indicated that the local reach transmissivity was about 400 cubic feet per second per mile per foot. The theoretical relation, combined with the local reach transmissivity and formation transmissivity, was sufficient to predict the leakage out of L-31N Canal and Snapper Creek Extension Canal for any drawdown scenario.

Effect of ozone treatment on the electrical properties of (Ba0.7Sr0.3)TiO3 thin films

NASA Astrophysics Data System (ADS)

Halder, Sandip; Schneller, Theodor; Meyer, Rene; Waser, Rainer

2005-06-01

Thin films of (BaxSr1-x)TiO3 were deposited on Pt-coated Si substrates by chemical solution deposition. The films were postannealed under ozone atmosphere at various temperatures. Although there was no change observed in the microstructure after the anneal in ozone, the dielectric dispersion and the loss tangents were reduced for the films. It was also noticed that the leakage current reduced by almost two orders of magnitude after treatment with ozone. The ozone treatment was done at various temperatures between 250 and 450°C to find an optimum temperature with regard to the electrical properties. Films postannealed in ozone at 350°C for 30min showed a leakage reduction by almost three orders of magnitude. The leakage dependence on ozone postannealing is discussed on the basis of an interface-dominated (Schottky injection) and a bulk-dominated (point defect approach) charge transport process as the two limiting conduction mechanisms across thin films.

Understanding and Mitigating Tip Leakage and Endwall Losses in High Pressure Ratio Cores

NASA Technical Reports Server (NTRS)

Christophel, Jesse

2015-01-01

Reducing endwall and tip secondary flow losses will be a key enabler for the next generation of commercial and military air transport and will be an improvement on the state-of-the-art in turbine loss reduction strategies. The objective of this research is three-fold: 1) To improve understanding of endwall secondary flow and tip clearance losses 2) To develop novel technologies to mitigate these losses and test them in low-speed cascade and rig environments 3) To validate predictive tools To accomplish these objectives, Pratt & Whitney (P&W) has teamed with Pennsylvania State University (PSU) to experimentally test new features designed by P&W. P&W will create new rim-cavity features to reduce secondary flow loss and improve purge flow cooling effectiveness and new blade tip features to manage leakage flows and reduce tip leakage secondary flow loss. P&W is currently developing technologies in these two areas that expect to be assimilated in the N+2/N+3 generation of commercial engines.

75 FR 17169 - Nextera Energy Duane Arnold, LLC, Duane Arnold Energy Center; Exemption

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-05

... leakage from the overall integrated leak rate test measurement. Main steam leakage includes leakage... integrated leakage rate (Type A) test measurement and from the sum of the leakage rates from local leakage... leakage rate (Type A) test [[Page 17170

Voltage and Current Clamp Transients with Membrane Dielectric Loss

PubMed Central

Fitzhugh, R.; Cole, K. S.

1973-01-01

Transient responses of a space-clamped squid axon membrane to step changes of voltage or current are often approximated by exponential functions of time, corresponding to a series resistance and a membrane capacity of 1.0 μF/cm2. Curtis and Cole (1938, J. Gen. Physiol. 21:757) found, however, that the membrane had a constant phase angle impedance z = z1(jωτ)-α, with a mean α = 0.85. (α = 1.0 for an ideal capacitor; α < 1.0 may represent dielectric loss.) This result is supported by more recently published experimental data. For comparison with experiments, we have computed functions expressing voltage and current transients with constant phase angle capacitance, a parallel leakage conductance, and a series resistance, at nine values of α from 0.5 to 1.0. A series in powers of tα provided a good approximation for short times; one in powers of t-α, for long times; for intermediate times, a rational approximation matching both series for a finite number of terms was used. These computations may help in determining experimental series resistances and parallel leakage conductances from membrane voltage or current clamp data. PMID:4754194

Design and Synthesis of Archaea-Inspired Tetraether Lipids

NASA Astrophysics Data System (ADS)

Koyanagi, Takaoki

Maintaining the correct ion homeostasis across membranes is a major challenge in both nature and artificial systems. Archaea, have evolved to solve membrane permeability problems to survive in extreme environments by incorporating unique structural features found in their lipid. Specifically, inclusion of phytanyl side chains, ether glycerol linkages, tethering of lipids, cycloalkanes, and different polar lipid headgroups into their lipid membrane are believed to contribute to membrane stability. We sought to gain a better understanding of the functional benefits attributed to these structural features to membrane stability to design a new class of synthetic Archaea inspired lipid membranes that can be used to overcome limitations (i.e. unstable in serum environment, high background leakage, and prone to hydrolysis) found in current lipid based technologies. Leakage experiments revealed liposomes made from GMGTPC (glycerol monoalkyl glycerol tetraether lipid with phosphatidylcholine headgroup) demonstrated a two order magnitude reduction in membrane leakage to small ions when compared with liposomes made from EggPC. Additionally, liposomes composed of GMGTPC-CH (cyclohexane integrated) lipid displayed an additional 40% decrease in membrane leakage to small ions when compared with liposomes made from GMGTPC lipids. Furthermore, leakage experiments revealed a higher degree of tolerance to headgroup modifications to membrane leakage for liposomes made from GMGT lipid analogs when compared with liposomes made from POPC. After designing an optimal tetraether lipid scaffold that incorporates key Archaeal structural features for membrane leakage, we explored to integrate strategies employed by eukaryotes to improve membrane properties (i.e. addition of cholesterol). Liposomes made from the hybrid lipid, GcGTPC-CH, displayed a five-fold decrease in membrane leakage when compared with liposomes made from GMGTPC-CH, while maintaining functional membrane properties similar to membranes made from diacyl lipids. Lastly, we engineered a thiol responsive hybrid lipid, GcGT(S-S)PC-CH, that demonstrated similar membrane stability in serum as GcGTPC-CH. Gratifyingly, doxorubicin loaded liposomes composed of GcGT(S-S)PC-CH liposomes displayed a 4 or 20-fold increase in toxicity to HeLa cells when compared with liposomes made from GcGTPC-CH or Doxil, respectively. This work represents a first step towards development of stimuli-responsive tetraether lipids that may offer advantages in membrane properties to be used in cancer therapy.

High-voltage space-plasma interactions measured on the PASP Plus test arrays

NASA Astrophysics Data System (ADS)

Guidice, Donald A.

1995-10-01

The Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment was developed by the Air Force's Phillips Laboratory with support from NASA's Lewis Research Center. It was launched on the Advanced Photovoltaic and Electronics EXperiments (APEX) satellite on August 3, 1994 into a 70 degree inclination, 363 km by 2550 km elliptical orbit. This orbit allows the investigation of space plasma effects on high-voltage operation (leakage current at positive voltages and arcing at negative voltages) in the perigee region. PASP Plus is testing twelve solar arrays. There are four planar Si arrays: an old standard type (used as a reference), the large-cell Space Station Freedom (SSF) array, a thin 'APSA' array, and an amorphous Si array. Next are three GaAs on Ge planar arrays and three new material planar arrays, including InP and two multijunction types. Finally, there are two concentrator arrays: a reflective-focusing Mini-Cassegrainian and a Fresnel-lens focusing Mini-Dome. PASP Plus's diagnostic sensors include: Langmuir probe to measure plasma density, an electrostatic analyzer (ESA) to measure the 30 eV to 30 KeV electron/ion spectra and determine vehicle negative potential during positive biasing, and a transient pulse monitor (TPM) to characterize the arcs that occur during the negative biasing. Through positive biasing of its test arrays, PASP Plus investigated the snapover phenomenon, which took place over the range of +100 to +300 V. It was found that array configurations where the interconnects are shielded from the space plasma (i.e., the concentrators or arrays with 'wrap-through' connectors) have lower leakage current. The concentrators exhibited negligible leakage current over the whole range up to +500 V. In the case of two similar GaAs on Ge arrays, the one with 'wrap-through' connectors had lower leakage current than the one with conventional interconnects. Through negative biasing, PASP Plus investigated the arcing rates of its test arrays. The standard Si array, with its old construction (exposed rough-surface interconnects), arced significantly over a wide voltage and plasma-density range. The other arrays arced at very low rates, mostly at voltages greater than -350 V and plasma densities near or greater than 10(exp 5)/cm(exp -3). AS expected according to theory, arcing was more prevalent when array temperatures were cold (based on biasing in eclipse).

High-voltage space-plasma interactions measured on the PASP Plus test arrays

NASA Technical Reports Server (NTRS)

Guidice, Donald A.

1995-01-01

The Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment was developed by the Air Force's Phillips Laboratory with support from NASA's Lewis Research Center. It was launched on the Advanced Photovoltaic and Electronics EXperiments (APEX) satellite on August 3, 1994 into a 70 degree inclination, 363 km by 2550 km elliptical orbit. This orbit allows the investigation of space plasma effects on high-voltage operation (leakage current at positive voltages and arcing at negative voltages) in the perigee region. PASP Plus is testing twelve solar arrays. There are four planar Si arrays: an old standard type (used as a reference), the large-cell Space Station Freedom (SSF) array, a thin 'APSA' array, and an amorphous Si array. Next are three GaAs on Ge planar arrays and three new material planar arrays, including InP and two multijunction types. Finally, there are two concentrator arrays: a reflective-focusing Mini-Cassegrainian and a Fresnel-lens focusing Mini-Dome. PASP Plus's diagnostic sensors include: Langmuir probe to measure plasma density, an electrostatic analyzer (ESA) to measure the 30 eV to 30 KeV electron/ion spectra and determine vehicle negative potential during positive biasing, and a transient pulse monitor (TPM) to characterize the arcs that occur during the negative biasing. Through positive biasing of its test arrays, PASP Plus investigated the snapover phenomenon, which took place over the range of +100 to +300 V. It was found that array configurations where the interconnects are shielded from the space plasma (i.e., the concentrators or arrays with 'wrap-through' connectors) have lower leakage current. The concentrators exhibited negligible leakage current over the whole range up to +500 V. In the case of two similar GaAs on Ge arrays, the one with 'wrap-through' connectors had lower leakage current than the one with conventional interconnects. Through negative biasing, PASP Plus investigated the arcing rates of its test arrays. The standard Si array, with its old construction (exposed rough-surface interconnects), arced significantly over a wide voltage and plasma-density range. The other arrays arced at very low rates, mostly at voltages greater than -350 V and plasma densities near or greater than 10(exp 5)/cm(exp -3). AS expected according to theory, arcing was more prevalent when array temperatures were cold (based on biasing in eclipse).

A time accurate prediction of the viscous flow in a turbine stage including a rotor in motion

NASA Astrophysics Data System (ADS)

Shavalikul, Akamol

In this current study, the flow field in the Pennsylvania State University Axial Flow Turbine Research Facility (AFTRF) was simulated. This study examined four sets of simulations. The first two sets are for an individual NGV and for an individual rotor. The last two sets use a multiple reference frames approach for a complete turbine stage with two different interface models: a steady circumferential average approach called a mixing plane model, and a time accurate flow simulation approach called a sliding mesh model. The NGV passage flow field was simulated using a three-dimensional Reynolds Averaged Navier-Stokes finite volume solver (RANS) with a standard kappa -- epsilon turbulence model. The mean flow distributions on the NGV surfaces and endwall surfaces were computed. The numerical solutions indicate that two passage vortices begin to be observed approximately at the mid axial chord of the NGV suction surface. The first vortex is a casing passage vortex which occurs at the corner formed by the NGV suction surface and the casing. This vortex is created by the interaction of the passage flow and the radially inward flow, while the second vortex, the hub passage vortex, is observed near the hub. These two vortices become stronger towards the NGV trailing edge. By comparing the results from the X/Cx = 1.025 plane and the X/Cx = 1.09 plane, it can be concluded that the NGV wake decays rapidly within a short axial distance downstream of the NGV. For the rotor, a set of simulations was carried out to examine the flow fields associated with different pressure side tip extension configurations, which are designed to reduce the tip leakage flow. The simulation results show that significant reductions in tip leakage mass flow rate and aerodynamic loss reduction are possible by using suitable tip platform extensions located near the pressure side corner of the blade tip. The computations used realistic turbine rotor inlet flow conditions in a linear cascade arrangement in the relative frame of reference; the boundary conditions for the computations were obtained from inlet flow measurements performed in the AFTRF. A complete turbine stage, including an NGV and a rotor row was simulated using the RANS solver with the SST kappa -- o turbulence model, with two different computational models for the interface between the rotating component and the stationary component. The first interface model, the circumferentially averaged mixing plane model, was solved for a fixed position of the rotor blades relative to the NGV in the stationary frame of reference. The information transferred between the NGV and rotor domains is obtained by averaging across the entire interface. The quasi-steady state flow characteristics of the AFTRF can be obtained from this interface model. After the model was validated with the existing experimental data, this model was not only used to investigate the flow characteristics in the turbine stage but also the effects of using pressure side rotor tip extensions. The tip leakage flow fields simulated from this model and from the linear cascade model show similar trends. More detailed understanding of unsteady characteristics of a turbine flow field can be obtained using the second type of interface model, the time accurate sliding mesh model. The potential flow interactions, wake characteristics, their effects on secondary flow formation, and the wake mixing process in a rotor passage were examined using this model. Furthermore, turbine stage efficiency and effects of tip clearance height on the turbine stage efficiency were also investigated. A comparison between the results from the circumferential average model and the time accurate flow model results is presented. It was found that the circumferential average model cannot accurately simulate flow interaction characteristics on the interface plane between the NGV trailing edge and the rotor leading edge. However, the circumferential average model does give accurate flow characteristics in the NGV domain and the rotor domain with less computational time and computer memory requirements. In contrast, the time accurate flow simulation can predict all unsteady flow characteristics occurring in the turbine stage, but with high computational resource requirements. (Abstract shortened by UMI.)

Hydrogeology of the Croton-Ossining area, Westchester County, New York

USGS Publications Warehouse

Reynolds, Richard J.

1988-01-01

The hydrogeology of a 29-sq-mi area surrounding the village of Croton-on-Hudson, New York, is summarized on 6 sheets at 1:12 ,000 scale that show locations of wells and test holes, surficial geology, geologic sections, bedrock geology, land use, and soil permeability. The primary stratified-drift aquifer in this area is the Croton River aquifer, which consists of outwash sand and gravel that partly fills the Croton River valley from the New Croton Dam to the Hudson River--a distance of approximately 3 miles. The valley is narrow and ranges in width from 100 to 1,900 ft, and its v-notch bedrock floor ranges from 30 to 50 ft below sea level. Detailed hydrogeologic studies during 1936-38 showed the stratigraphy to consist of an upper water-table aquifer with a saturated thickness of about 35 ft, underlain by a silt and clay confining unit 8 to o0 ft in thickness that in turn is underlain by a lower confined outwash aquifer up to 40 ft thick. Aquifer-test data and laboratory permeability tests show that the average hydraulic conductivity of the upper outwash aquifer is 475 ft/d, and that of the lower confined aquifer is about 300 ft/d. The aquifer is recharged through direct precipitation, runoff from adjacent hillsides, and leakage under the new Croton Dam. Previous studies estimate the average leakage under the dam to be 0.65 Mgal/d and the total average daily recharge to the aquifer between New Croton Dam and Quaker Bridge to be 1.73 Mgal/d. (USGS)

Modeling of Dual Gate Material Hetero-dielectric Strained PNPN TFET for Improved ON Current

NASA Astrophysics Data System (ADS)

Kumari, Tripty; Saha, Priyanka; Dash, Dinesh Kumar; Sarkar, Subir Kumar

2018-01-01

The tunnel field effect transistor (TFET) is considered to be a promising alternative device for future low-power VLSI circuits due to its steep subthreshold slope, low leakage current and its efficient performance at low supply voltage. However, the main challenging issue associated with realizing TFET for wide scale applications is its low ON current. To overcome this, a dual gate material with the concept of dielectric engineering has been incorporated into conventional TFET structure to tune the tunneling width at source-channel interface allowing significant flow of carriers. In addition to this, N+ pocket is implanted at source-channel junction of the proposed structure and the effect of strain is added for exploring the performance of the model in nanoscale regime. All these added features upgrade the device characteristics leading to higher ON current, low leakage and low threshold voltage. The present work derives the surface potential, electric field expression and drain current by solving 2D Poisson's equation at different boundary conditions. A comparative analysis of proposed model with conventional TFET has been done to establish the superiority of the proposed structure. All analytical results have been compared with the results obtained in SILVACO ATLAS device simulator to establish the accuracy of the derived analytical model.

A new leakage measurement method for damaged seal material

NASA Astrophysics Data System (ADS)

Wang, Shen; Yao, Xue Feng; Yang, Heng; Yuan, Li; Dong, Yi Feng

2018-07-01

In this paper, a new leakage measurement method based on the temperature field and temperature gradient field is proposed for detecting the leakage location and measuring the leakage rate in damaged seal material. First, a heat transfer leakage model is established, which can calculate the leakage rate based on the temperature gradient field near the damaged zone. Second, a finite element model of an infinite plate with a damaged zone is built to calculate the leakage rate, which fits the simulated leakage rate well. Finally, specimens in a tubular rubber seal with different damage shapes are used to conduct the leakage experiment, validating the correctness of this new measurement principle for the leakage rate and the leakage position. The results indicate the feasibility of the leakage measurement method for damaged seal material based on the temperature gradient field from infrared thermography.

Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Qiu, WeiCheng; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn

2014-11-14

The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be themore » best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.« less

Asymmetrical Capacitors for Propulsion

NASA Technical Reports Server (NTRS)

Canning, Francis X.; Melcher, Cory; Winet, Edwin

2004-01-01

Asymmetrical Capacitor Thrusters have been proposed as a source of propulsion. For over eighty years, it has been known that a thrust results when a high voltage is placed across an asymmetrical capacitor, when that voltage causes a leakage current to flow. However, there is surprisingly little experimental or theoretical data explaining this effect. This paper reports on the results of tests of several Asymmetrical Capacitor Thrusters (ACTs). The thrust they produce has been measured for various voltages, polarities, and ground configurations and their radiation in the VHF range has been recorded. These tests were performed at atmospheric pressure and at various reduced pressures. A simple model for the thrust was developed. The model assumed the thrust was due to electrostatic forces on the leakage current flowing across the capacitor. It was further assumed that this current involves charged ions which undergo multiple collisions with air. These collisions transfer momentum. All of the measured data was consistent with this model. Many configurations were tested, and the results suggest general design principles for ACTs to be used for a variety of purposes.

Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing

NASA Astrophysics Data System (ADS)

Huang, Shyh-Jer; Chou, Cheng-Wei; Su, Yan-Kuin; Lin, Jyun-Hao; Yu, Hsin-Chieh; Chen, De-Long; Ruan, Jian-Long

2017-04-01

In this paper, we present a technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p-NiOx capping layer. The p-NiOx layer is produced by sputtering at room temperature and post-annealing at 500 °C for 30 min in pure O2 environment to achieve high hole concentration. The Vth shifts from -3 V in the conventional transistor to 0.33 V, and on/off current ratio became 107. The forward and reverse gate breakdown increase from 3.5 V and -78 V to 10 V and -198 V, respectively. The reverse gate leakage current is 10-9 A/mm, and the off-state drain-leakage current is 10-8 A/mm. The Vth hysteresis is extremely small at about 33 mV. We also investigate the mechanism that increases hole concentration of p-NiOx after annealing in oxygen environment resulted from the change of Ni2+ to Ni3+ and the surge of (111)-orientation.

Training Graduate and Undergraduate Students in Simulation and Risk Assessment for Carbon Sequestration

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCray, John

Capturing carbon dioxide (CO2) and injecting it into deep underground formations for storage (carbon capture and underground storage, or CCUS) is one way of reducing anthropogenic CO2 emissions. Gas or aqueous-phase leakage may occur due to transport via faults and fractures, through faulty well bores, or through leaky confining materials. Contaminants of concern include aqueous salts and dissolved solids, gaseous or aqueous-phase organic contaminants, and acidic gas or aqueous-phase fluids that can liberate metals from aquifer minerals. Understanding the mechanisms and parameters that can contribute to leakage of the CO2 and the ultimate impact on shallow water aquifers that overliemore » injection formations is an important step in evaluating the efficacy and risks associated with long-term CO2 storage. Three students were supported on the grant Training Graduate and Undergraduate Students in Simulation and Risk Assessment for Carbon Sequestration. These three students each examined a different aspect of simulation and risk assessment related to carbon dioxide sequestration and the potential impacts of CO2 leakage. Two performed numerical simulation studies, one to assess leakage rates as a function of fault and deep reservoir parameters and one to develop a method for quantitative risk assessment in the event of a CO2 leak and subsequent changes in groundwater chemistry. A third student performed an experimental evaluation of the potential for metal release from sandstone aquifers under simulated leakage conditions. This study has resulted in two student first-authored published papers {Siirila, 2012 #560}{Kirsch, 2014 #770} and one currently in preparation {Menke, In prep. #809}.« less

Complement Activation in Relation to Capillary Leakage in Children with Septic Shock and Purpura

PubMed Central

Hazelzet, Jan A.; de Groot, Ronald; van Mierlo, Gerard; Joosten, Koen F. M.; van der Voort, Edwin; Eerenberg, Anke; Suur, Marja H.; Hop, Wim C. J.; Hack, C. Erik

1998-01-01

To assess the relationship between capillary leakage and inflammatory mediators during sepsis, blood samples were taken on hospital admission, as well as 24 and 72 h later, from 52 children (median age, 3.3 years) with severe meningococcal sepsis, of whom 38 survived and 14 died. Parameters related to cytokines (interleukin 6 [IL-6] IL-8, plasma phospholipase A2, and C-reactive protein [CRP]), to neutrophil degranulation (elastase and lactoferrin), to complement activation (C3a, C3b/c, C4b/c, and C3- and C4-CRP complexes), and to complement regulation (functional and inactivated C1 inhibitor and C4BP) were determined. The degree of capillary leakage was derived from the amount of plasma infused and the severity of disease by assessing the pediatric risk of mortality (PRISM) score. Levels of IL-6, IL-8, C3b/c, C3-CRP complexes, and C4BP on admission, adjusted for the duration of skin lesions, were significantly different in survivors and nonsurvivors (C3b/c levels were on average 2.2 times higher in nonsurvivors, and C3-CRP levels were 1.9 times higher in survivors). Mortality was independently related to the levels of C3b/c and C3-CRP complexes. In agreement with this, levels of complement activation products correlated well with the PRISM score or capillary leakage. Thus, these data show that complement activation in patients with severe meningococcal sepsis is associated with a poor outcome and a more severe disease course. Further studies should reveal whether complement activation may be a target for therapeutical intervention in this disease. PMID:9784543

Less invasive reduction and fusion of fresh A2 and A 3 traumatic L 1-L 4 fractures with a novel vertebral body augmentation implant and short pedicle screw fixation and fusion.

PubMed

Korovessis, Panagiotis; Vardakastanis, Konstantinos; Repantis, Thomas; Vitsas, Vasilios

2014-04-01

The aim of this clinical study was to report on the efficacy in reduction and safety in PMMA leakage of a novel vertebral augmentation technique with PEEK and PMMA, together with pedicle screws in the treatment of fresh vertebral fractures in young adults. Twenty consecutive young adults aged 45 ± 11 years with fresh burst A3/AO or severely compressed A2/AO fractures underwent via a less invasive posterior approach one-staged reduction with a novel augmentation implant and PMMA plus 3-vertebrae pedicle screw fixation and fusion. Radiologic parameters as segmental kyphosis (SKA), anterior (AVBHr) and posterior vertebral body height ratio (PVBHr), spinal canal encroachment (SCE), cement leakage and functional parameters as VAS, SF-36 were measured pre- and post-operatively. Hybrid construct restored AVBHr (P < 0.000), PVBHr (P = 0.02), SKA (P = 0.015), SCE (P = 0.002) without loss of correction at an average follow-up of 17 months. PMMA leakage occurred in 3 patients (3 vertebrae) either anteriorly to the fractured vertebral body or to the adjacent disc, but in no case to the spinal canal. Two pedicle screws were malpositioned (one medially, one laterally to the pedicle at the fracture level) without neurologic sequelae. Solid posterolateral spinal fusion occurred 8-10 months post-operatively. Pre-operative VAS and SF-36 scores improved post-operatively significantly. This study showed that this novel vertebral augmentation technique using PEEK implant and PMMA reduces and stabilizes via less invasive technique A2 and A3 vertebral fractures without loss of correction and leakage to the spinal canal.

Reduce Air Infiltration in Furnaces (English/Chinese) (Fact Sheet) (in Chinese; English)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

Chinese translation of the Reduce Air Infiltration in Furnaces fact sheet. Provides suggestions on how to improve furnace energy efficiency. Fuel-fired furnaces discharge combustion products through a stack or a chimney. Hot furnace gases are less dense and more buoyant than ambient air, so they rise, creating a differential pressure between the top and the bottom of the furnace. This differential, known as thermal head, is the source of a natural draft or negative pressure in furnaces and boilers. A well-designed furnace (or boiler) is built to avoid air leakage into the furnace or leakage of flue gases from themore » furnace to the ambient. However, with time, most furnaces develop cracks or openings around doors, joints, and hearth seals. These openings (leaks) usually appear small compared with the overall dimensions of the furnace, so they are often ignored. The negative pressure created by the natural draft (or use of an induced-draft fan) in a furnace draws cold air through the openings (leaks) and into the furnace. The cold air becomes heated to the furnace exhaust gas temperature and then exits through the flue system, wasting valuable fuel. It might also cause excessive oxidation of metals or other materials in the furnaces. The heat loss due to cold air leakage resulting from the natural draft can be estimated if you know four major parameters: (1) The furnace or flue gas temperature; (2) The vertical distance H between the opening (leak) and the point where the exhaust gases leave the furnace and its flue system (if the leak is along a vertical surface, H will be an average value); (3) The area of the leak, in square inches; and (4) The amount of operating time the furnace spends at negative pressure. Secondary parameters that affect the amount of air leakage include these: (1) The furnace firing rate; (2) The flue gas velocity through the stack or the stack cross-section area; (3) The burner operating conditions (e.g., excess air, combustion air temperature, and so on). For furnaces or boilers using an induced-draft (ID) fan, the furnace negative pressure depends on the fan performance and frictional losses between the fan inlet and the point of air leakage. In most cases, it would be necessary to measure or estimate negative pressure at the opening. The amount of air leakage, the heat lost in flue gases, and their effects on increased furnace or boiler fuel consumption can be calculated by using the equations and graphs given in Industrial Furnaces (see W. Trinks et al., below). Note that the actual heat input required to compensate for the heat loss in flue gases due to air leakage would be greater than the heat contained in the air leakage because of the effect of available heat in the furnace. For a high-temperature furnace that is not maintained properly, the fuel consumption increase due to air leakage can be as high as 10% of the fuel input.« less

Postprostatectomy urinary incontinence: a comparison of the cost of conservative versus surgical management.

PubMed

Brown, J A; Elliott, D S; Barrett, D M

1998-05-01

Post-radical prostatectomy stress incontinence occurs in up to 20% of patients. Postprostatectomy incontinence is initially treated with undergarments, pads, or drip collectors. Patients with persistent leakage are often treated with a transurethral bulking agent (Contigen) or placement of an artificial genitourinary sphincter (AGUS). We have compared the direct costs of each treatment at our institution over 10 years. The Mayo Clinic estimating office provided the Medicare and non-Medicare charges for patients receiving both collagen injection (outpatient) and AGUS placement (2-day hospitalization) during August 1995. The Mayo Store provided the current price of all undergarments, pads, and drip collectors carried. Two local grocery stores provided the cost of Depends undergarments. The following items were the least expensive carried at the Mayo Clinic Store: Entrust undergarments, Active Style pads, and Conveen drip collectors at $0.99, $0.52, $1.05 each, respectively. The average cost of Depends undergarments was $0.52 each. The cost of wearing 5 of the least expensive undergarments or pads per day for 10 years is $9497. The average estimated Medicare and non-Medicare cost for outpatient (general anesthesia) collagen injection is $4300 and $5625, respectively. The average Medicare and non-Medicare cost for AGUS placement is $15,400 and $20,300, respectively. Factoring in our current 22.4% reoperation rate, the average per patient Medicare and non-Medicare cost for AGUS placement is $18,850 and $24,847, respectively. The cost of the AGUS placement compares favorably with the cost of transurethral collagen injection (under general anesthesia) in patients requiring several (more than three) collagen injection treatments or requiring the continued use of undergarments after collagen injection. Whereas the cost of transurethral collagen injection, when effective, compares favorably with conservative treatment, AGUS placement is significantly more expensive than conservative management for almost all patients except the exceedingly rare patient wearing more than 9 undergarments or pads per day. When the psychosocial benefit of urinary continence is considered, however, transurethral injection of collagen or AGUS placement often becomes the preferred treatment.

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

NASA Astrophysics Data System (ADS)

Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

2017-05-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Cunningham, Thomas; Hancock, Bruce

2008-01-01

Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated-circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal-handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.

Comparison of Transformer Winding Methods for Contactless Power Transfer Systems of Electric Vehicle

NASA Astrophysics Data System (ADS)

Kaneko, Yasuyoshi; Ehara, Natsuki; Iwata, Takuya; Abe, Shigeru; Yasuda, Tomio; Ida, Kazuhiko

This paper describes the comparison of the characteristics of double- and single-sided windings of contactless power transfer systems used in electric vehicles. The self-inductance changes with the electric current when the gap length is fixed in single-sided windings. The issue is resolved by maintaining the secondary voltage constant. In the case of double-sided windings, the transformer can be miniaturized in comparison with the single-sided winding transformer. However, the coupling factor is small, and appropriate countermeasures must be adopted to reduce the back leakage flux. The leakage flux is reduced by placing an aluminum board behind the transformer. Thus, the coupling factor increases.