Power and efficiency scaling of diode pumped Cr:LiSAF lasers: 770-1110 nm tuning range and frequency doubling to 387-463 nm.

PubMed

Demirbas, Umit; Baali, Ilyes

2015-10-15

We report significant average power and efficiency scaling of diode-pumped Cr:LiSAF lasers in continuous-wave (cw), cw frequency-doubled, and mode-locked regimes. Four single-emitter broad-area laser diodes around 660 nm were used as the pump source, which provided a total pump power of 7.2 W. To minimize thermal effects, a 20 mm long Cr:LiSAF sample with a relatively low Cr-concentration (0.8%) was used as the gain medium. In cw laser experiments, 2.4 W of output power, a slope efficiency of 50%, and a tuning range covering the 770-1110 nm region were achieved. Intracavity frequency doubling with beta-barium borate (BBO) crystals generated up to 1160 mW of blue power and a record tuning range in the 387-463 nm region. When mode locked with a saturable absorber mirror, the laser produced 195 fs pulses with 580 mW of average power around 820 nm at a 100.3 MHz repetition rate. The optical-to-optical conversion efficiency of the system was 33% in cw, 16% in cw frequency-doubled, and 8% in cw mode-locked regimes.

Highly efficient and high-power diode-pumped femtosecond Yb:LYSO laser

NASA Astrophysics Data System (ADS)

Tian, Wenlong; Wang, Zhaohua; Zhu, Jiangfeng; Zheng, Lihe; Xu, Jun; Wei, Zhiyi

2017-04-01

A diode-pumped high-power femtosecond Yb:LYSO laser with high efficiency is demonstrated. With a semiconductor saturable absorber mirror for passive mode-locking and a Gires-Tournois interferometer mirror for intracavity dispersion compensation, stable mode-locking pulses of 297 fs duration at 1042 nm were obtained. The maximum average power of 3.07 W was realized under 5.17 W absorbed pump power, corresponding to as high as 59.4% opt-opt efficiency. The single pulse energy and peak power are about 35.5 nJ and 119.5 kW, respectively.

High average power diode pumped solid state laser

NASA Astrophysics Data System (ADS)

Gao, Yue; Wang, Yanjie; Chan, Amy; Dawson, Murray; Greene, Ben

2017-03-01

A new generation of high average power pulsed multi-joule solid state laser system has been developed at EOS Space Systems for various space related tracking applications. It is a completely diode pumped, fully automated multi-stage system consisting of a pulsed single longitudinal mode oscillator, three stages of pre-amplifiers, two stages of power amplifiers, completely sealed phase conjugate mirror or stimulated Brillouin scattering (SBS) cell and imaging relay optics with spatial filters in vacuum cells. It is capable of generating pulse energy up to 4.7 J, a beam quality M 2 ~ 3, pulse width between 10-20 ns, and a pulse repetition rate between 100-200 Hz. The system has been in service for more than two years with excellent performance and reliability.

Generation of high powers from diode pumped chromium-3+ doped colquiriites

NASA Astrophysics Data System (ADS)

Eichenholz, Jason Matthew

1998-12-01

There is considerable interest in the area of laser diode pumped solid-state lasers. Diode pumped solid-state lasers (DPSSL) operating at high average power levels are attractive light sources for various applications such as materials processing, laser radar, and fundamental physics experiments. These laser systems have become more commonplace because of their efficiency, reliability, compactness, low relative cost, and long operational lifetimes. Induced thermal effects in the solid-state laser medium hinder the scaling of DPSSL's to higher average power levels. Therefore a deep insight into the thermo-mechanical properties of the solid state laser is crucial in order to ensure a laser design which is optimized for high average power operation. A comprehensive study of the factors that contribute to thermal loading of the colquiriites was performed. A three-dimensional thermal model has been created to determine the temperature rise inside the laser crystal. This new model calculates the temperature distribution by considering quantum defect, upconversion, and upper-state lifetime quenching as heating sources. The thermally induced lensing in end pumped Cr3+ doped LiSrAlF6, LiSrGaF6, LiSrCaAlF6, and LiCaAlF6 were experimentally measured. Several diode pumped colquiriite laser systems were assembled to quantitatively observe and identify thermally induced effects. Significant differences in each of the colquiriite materials were observed. These differences are explained by the differences in the thermo-mechanical and thermo-optical properties of the material and are explained by the theoretical thermal model.

High efficiency 2 micrometer laser utilizing wing-pumped Tm.sup.3+ and a laser diode array end-pumping architecture

DOEpatents

Beach, Raymond J.

1997-01-01

Wing pumping a Tm.sup.3+ doped, end pumped solid state laser generates 2 .mu.m laser radiation at high average powers with high efficiency. Using laser diode arrays to end-pump the laser rod or slab in the wing of the Tm.sup.3+ absorption band near 785 nm results in 2-for-1 quantum efficiency in Tm.sup.3+ because high Tm.sup.3+ concentrations can be used. Wing pumping allows the thermal power generated in the rod or slab to be distributed over a large enough volume to make thermal management practical in the laser gain medium even at high average power operation. The approach is applicable to CW, Q-switched, and rep-pulsed free-laser operation.

High efficiency 2 micrometer laser utilizing wing-pumped Tm{sup 3+} and a laser diode array end-pumping architecture

DOEpatents

Beach, R.J.

1997-11-18

Wing pumping a Tm{sup 3+} doped, end pumped solid state laser generates 2 {micro}m laser radiation at high average powers with high efficiency. Using laser diode arrays to end-pump the laser rod or slab in the wing of the Tm{sup 3+} absorption band near 785 nm results in 2-for-1 quantum efficiency in Tm{sup 3+} because high Tm{sup 3+} concentrations can be used. Wing pumping allows the thermal power generated in the rod or slab to be distributed over a large enough volume to make thermal management practical in the laser gain medium even at high average power operation. The approach is applicable to CW, Q-switched, and rep-pulsed free-laser operation. 7 figs.

GaAs laser diode pumped Nd:YAG laser

NASA Technical Reports Server (NTRS)

Conant, L. C.; Reno, C. W.

1974-01-01

A 1.5-mm by 3-cm neodymium-ion doped YAG laser rod has been side pumped using a GaAs laser diode array tuned to the 8680-A absorption line, achieving a multimode average output power of 120 mW for a total input power of 20 W to the final-stage laser diode drivers. The pumped arrangement was designed to take advantage of the high brightness of a conventional GaAs array as a linear source by introducing the pump light through a slit into a close-wrapped gold coated pump cavity. This cavity forms an integrating chamber for the pump light.

1-mJ Q-switched diode-pumped Nd:BaY2F8 laser

NASA Astrophysics Data System (ADS)

Agnesi, Antonio; Carraro, Giovanni; Guandalini, Annalisa; Reali, Giancarlo; Sani, Elisa; Toncelli, Alessandra; Tonelli, Mauro

2004-08-01

We report what is to our knowledge the first high repetition rate Q-switched Nd:BaY2F8 (Nd:BaYF) laser pumped with a multiwatt fiber-coupled diode array tuned at 806 nm. As much as 2.42 W of average power and up to 1.05 mJ of pulse energy were obtained with 6.1 W of absorbed pump power, with excellent beam quality (M2<1.2) and linear polarization.

Diode pumped passively Q-switched Nd:LuAG laser at 1442.6 nm

NASA Astrophysics Data System (ADS)

Guan, Chen; Liu, Zhaojun; Cong, Zhenhua; Liu, Yang; Xu, Xiaodong; Xu, Jun; Huang, Qingjie; Rao, Han; Chen, Xia; Zhang, Yanmin; Wu, Qianwen; Bai, Fen; Zhang, Sasa

2017-02-01

A diode-end-pumped passively Q-switched Nd:LuAG laser at 1442.6 nm was demonstrated with a V3+:YAG crystal as the saturable absorber. Under continuous-wave (CW) operation, the maximum output power of 1.83 W was obtained with an absorbed pumping power of 11.1 W. The corresponding optical-to-optical conversion efficiency was 16.5%. Under Q-switched operation, the maximum average output power of 424 mW was obtained at the same pumping power. The pulse duration and pulse repetition rate were 72 ns and 17.4 kHz, respectively.

Direct diode lasers and their advantages for materials processing and other applications

NASA Astrophysics Data System (ADS)

Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

2015-03-01

The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of <10μs and repetition rates can be adjusted continuously from several kHz up to cw mode while addressing power levels from 0-100%. By combining trigger signals with analog modulations nearly any kind of pulse form can be realized. Diode lasers also offer a wide, adaptable range of wavelengths, and wavelength stabilization. We report a line width of less than 0.1nm while the wavelength stability is in the range of MHz which is comparable to solid state lasers. In terms of applications, especially our (broad) wavelength combining technology for power scaling opens the window to new processes of cutting or welding and process control. Fast power modulation through direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but also spurs the development of a wide variety of new applications.

16.7 W 885 nm diode-side-pumped actively Q-switched Nd:YAG/YVO4 intracavity Raman laser at 1176 nm

NASA Astrophysics Data System (ADS)

Jiang, Pengbo; Zhang, Guizhong; Liu, Jian; Ding, Xin; Sheng, Quan; Yu, Xuanyi; Sun, Bing; Shi, Rui; Wu, Liang; Wang, Rui; Yao, Jianquan

2017-11-01

We proposed and experimentally demonstrated the generation of high-power 1176 nm Stokes wave by frequency shifting of a 885 nm diode-side-pumped Nd:YAG laser using a YVO4 crystal in a Z-shaped cavity configuration. Employing the 885 nm diode-side-pumped scheme and the Z-shaped cavity, for the first time to our knowledge, we realized the thermal management effectively, achieving excellent 1176 nm Stokes wave consequently. With an incident pump power of ~190.0 W, a maximum average output power of 16.7 W was obtained at the pulse repetition frequency of 10 kHz. The pulse duration and spectrum linewidth of the Stokes wave at the maximum output power were 20.3 ns and ~0.08 nm, respectively.

Diode-pumped Alexandrite laser with passive SESAM Q-switching and wavelength tunability

NASA Astrophysics Data System (ADS)

Parali, Ufuk; Sheng, Xin; Minassian, Ara; Tawy, Goronwy; Sathian, Juna; Thomas, Gabrielle M.; Damzen, Michael J.

2018-03-01

We report the first experimental demonstration of a wavelength tunable passively Q-switched red-diode-end pumped Alexandrite laser using a semiconductor saturable absorber mirror (SESAM). We present the results of the study of passive SESAM Q-switching and wavelength-tuning in continuous diode-pumped Alexandrite lasers in both linear cavity and X-cavity configurations. In the linear cavity configuration, pulsed operation up to 27 kHz repetition rate in fundamental TEM00 mode was achieved and maximum average power was 41 mW. The shortest pulse generated was 550 ns (FWHM) and the Q-switched wavelength tuning band spanned was between 740 nm and 755 nm. In the X-cavity configuration, a higher average power up to 73 mW, and obtained with higher pulse energy 6 . 5 μJ at 11.2 kHz repetition rate, in fundamental TEM00 mode with excellent spatial quality M2 < 1 . 1. The Q-switched wavelength tuning band spanned was between 775 nm and 781 nm.

Diode-pumped continuous-wave and femtosecond Cr:LiCAF lasers with high average power in the near infrared, visible and near ultraviolet.

PubMed

Demirbas, Umit; Baali, Ilyes; Acar, Durmus Alp Emre; Leitenstorfer, Alfred

2015-04-06

We demonstrate continuous-wave (cw), cw frequency-doubled, cw mode-locked and Q-switched mode-locked operation of multimode diode-pumped Cr:LiCAF lasers with record average powers. Up to 2.54 W of cw output is obtained around 805 nm at an absorbed pump power of 5.5 W. Using intracavity frequency doubling with a BBO crystal, 0.9 W are generated around 402 nm, corresponding to an optical-to-optical conversion efficiency of 12%. With an intracavity birefringent tuning plate, the fundamental and frequency-doubled laser output is tuned continuously in a broad wavelength range from 745 nm to 885 nm and from 375 to 440 nm, respectively. A saturable Bragg reflector is used to initiate and sustain mode locking. In the cw mode-locked regime, the Cr:LiCAF laser produces 105-fs long pulses near 810 nm with an average power of 0.75 W. The repetition rate is 96.4 MHz, resulting in pulse energies of 7.7 nJ and peak powers of 65 kW. In Q-switched mode-locked operation, pulses with energies above 150 nJ are generated.

Laser-diode pumped 40-W Yb:YAG ceramic laser.

PubMed

Hao, Qiang; Li, Wenxue; Pan, Haifeng; Zhang, Xiaoyi; Jiang, Benxue; Pan, Yubai; Zeng, Heping

2009-09-28

We demonstrated a high-power continuous-wave (CW) polycrystalline Yb:YAG ceramic laser pumped by fiber-pigtailed laser diode at 968 nm with 400 mum fiber core. The Yb:YAG ceramic laser performance was compared for different Yb(3+) ion concentrations in the ceramics by using a conventional end-pump laser cavity consisting of two flat mirrors with output couplers of different transmissions. A CW laser output of 40 W average power with M(2) factor of 5.8 was obtained with 5 mol% Yb concentration under 120 W incident pump power. This is to the best of our knowledge the highest output power in end-pumped bulk Yb:YAG ceramic laser.

Passively mode-locked diode-pumped Nd:YVO4 oscillator operating at an ultralow repetition rate.

PubMed

Papadopoulos, D N; Forget, S; Delaigue, M; Druon, F; Balembois, F; Georges, P

2003-10-01

We demonstrate the operation of an ultralow-repetition-rate, high-peak-power, picosecond diode-pumped Nd:YVO4 passively mode-locked laser oscillator. Repetition rates lower than 1 MHz were achieved with the use of a new design for a multiple-pass cavity and a semiconductor saturable absorber. Long-term stable operation at 1.2 MHz with a pulse duration of 16.3 ps and an average output power of 470 mW, corresponding to 24-kW peak-power pulses, is reported. These are to our knowledge the lowest-repetition-rate high-peak-power pulses ever generated directly from apicosecond laser resonator without cavity dumping.

Improvement of two-photon microscopic imaging in deep regions of living mouse brains by utilizing a light source based on an electrically controllable gain-switched laser diode

NASA Astrophysics Data System (ADS)

Sawada, Kazuaki; Kawakami, Ryosuke; Fang, Yi-Cheng; Hung, Jui-Hung; Kozawa, Yuichi; Otomo, Kohei; Sato, Shunichi; Yokoyama, Hiroyuki; Nemoto, Tomomi

2018-02-01

In vivo two-photon microscopy is an advantageous technique for observing living mouse brains at high spatial resolutions. We previously used a 1064 nm high-power light source based on an electrically controllable gain-switched laser diode (maximum power: 4 W, repetition rate: 10 MHz, pulse width: 7.5 picoseconds) and successfully visualized EYFP expressing neurons at deeper regions in H-line mouse brains under living conditions. However, severe damages were frequently observed when the laser power after the objective lens was over 600 mW, suggesting that a higher average power might not be suitable for visualizing neural structures and functions at deep regions. To increase fluorescent signals as a strategy to avoid such invasions, here, we evaluated the effects of the excitation laser parameters such as the repetition rate (5 - 10 MHz), or the peak power, at the moderate average powers (10 - 500 mW), by taking the advantage that this electrically controllable light source could be used to change the repetition rate independently from the average power or the pulse width. The fluorescent signals of EYFP at layer V of the cerebral cortex were increased by approximately twofold when the repetition rate was decreased from 10 MHz to 5 MHz at the same average power. We also confirmed similar effects in the EYFP solution (335 μM) and fixed brain slices. These results suggest that in vivo two-photon microscopic imaging might be improved by increasing the peak power at the same average power while avoiding the severe damages in living brains.

High Average Power Diode Pumped Solid State Lasers: Power Scaling With High Spectral and Spatial Coherence

DTIC Science & Technology

2009-03-30

seeded with 15 W of single-frequency laser light at 1064 nm and cladding -pumped of 700 W in the forward direction and 300 W in the opposite direction...57-W single-mode phosphate fiber laser Our early studies of phosphate fiber lasers taught us that adding an air-hole to the inner cladding and... cladding -pumped with a fiber-coupled laser diode at 977 nm through a dichroic beam splitter placed on the OC side. The fiber ends were cooled using the

Diode laser treatment for osteal and osteoarticular panaritium

NASA Astrophysics Data System (ADS)

Privalov, Valery A.; Krochek, Ivan V.; Lappa, Alexander V.; Poltavsky, Andrew N.; Antonov, Andrew A.

2005-08-01

Laser osteoperforation method, initially developed for treatment of osteomyelitis, was successfully applied to 66 patients with osteal and osteoarticular panaritium. The procedure consisted in perforation of the affected phalanx with diode laser radiation (wavelength 970nm; average power 10-12W; pulse mode 100/50 ms), delivered through quartz monofiber. Additional laser induced thermotherapy (power 2-3W; continuous mode) was fulfilled for persistent fistulas. In comparison with conventional surgery, laser osteoperforation provided faster pain relieve, edema dissipation, wound and fistula closure; good functional results; decreasing of disability cases number.

Compact high-efficiency 100-W-level diode-side-pumped Nd:YAG laser with linearly polarized TEM00 mode output.

PubMed

Xu, Yi-Ting; Xu, Jia-Lin; Guo, Ya-Ding; Yang, Feng-Tu; Chen, Yan-Zhong; Xu, Jian; Xie, Shi-Yong; Bo, Yong; Peng, Qin-Jun; Cui, Dafu; Xu, Zu-Yan

2010-08-20

We present a compact high-efficiency and high-average-power diode-side-pumped Nd:YAG rod laser oscillator operated with a linearly polarized fundamental mode. The oscillator resonator is based on an L-shaped convex-convex cavity with an improved module and a dual-rod configuration for birefringence compensation. Under a pump power of 344 W, a linearly polarized average output power of 101.4 W at 1064 nm is obtained, which corresponds to an optical-to-optical conversion efficiency of 29.4%. The laser is operated at a repetition rate of 400 Hz with a beam quality factor of M(2)=1.14. To the best of our knowledge, this is the highest optical-to-optical efficiency for a side-pumped TEM(00) Nd:YAG rod laser oscillator with a 100-W-level output ever reported.

The Multidisk Diode-Pumped High Power Yb:YAG Laser Amplifier of High-Intensity Laser System with 1 kHz Repetition Rate

NASA Astrophysics Data System (ADS)

Kuptsov, G. V.; Petrov, V. V.; Petrov, V. A.; Laptev, A. V.; Kirpichnikov, A. V.; Pestryakov, E. V.

2018-04-01

The source of instabilities in the multidisk diode-pumped high power Yb:YAG laser amplifier with cryogenic closed-loop cooling in the laser amplification channel of the high-intensity laser system with 1 kHz repetition rate was determined. Dissected copper mounts were designed and used to suppress instabilities and to achieve repeatability of the system. The equilibrium temperature dependency of the active elements on average power was measured. The seed laser for the multidisk amplifier was numerically simulated and designed to allow one to increase pulses output energy after the amplifier up to 500 mJ.

Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser.

PubMed

Kisel, V E; Gorbachenya, K N; Yasukevich, A S; Ivashko, A M; Kuleshov, N V; Maltsev, V V; Leonyuk, N I

2012-07-01

We report, for the first time to our knowledge, a diode-pumped cw and passively Q-switched microchip Er, Yb:YAl(3)(BO(3))(4) laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using Co(2+):MgAl(2)O(4) as a saturable absorber, a TEM(00)-mode Q-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 μJ at a repetition rate of 60 kHz.

Simultaneous in situ measurement of CO, H2O, and gas temperatures in a full-sized coal-fired power plant by near-infrared diode lasers.

PubMed

Teichert, Holger; Fernholz, Thomas; Ebert, Volker

2003-04-20

We present what is to our knowledge the first near-infrared diode-laser-based absorption spectrometer that is suitable for simultaneous in situ measurement of carbon monoxide, water vapor, and temperature in the combustion chamber (20-m diameter, 13-m path length) of a 600-MW lignite-fired power plant. A fiber-coupled distributed-feedback diode-laser module at 1.56 microm served for CO detection, and a Fabry-Perot diode laser at 813 nm was used to determine H2O concentrations and temperature from multiline water spectra. Despite severe light losses (transmission, <10(-8)) and strong background radiation we achieved a resolution of 1.9 x 10(-4) (1sigma) fractional absorption, equivalent to 200 parts in 10(6) by volume of CO (at 1450 K, 10(5) Pa) with 30-s averaging time.

Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

PubMed

Ma, J; Xie, G Q; Gao, W L; Yuan, P; Qian, L J; Yu, H H; Zhang, H J; Wang, J Y

2012-04-15

A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region. © 2012 Optical Society of America

Electrooptic modulation methods for high sensitivity tunable diode laser spectroscopy

NASA Technical Reports Server (NTRS)

Glenar, David A.; Jennings, Donald E.; Nadler, Shacher

1990-01-01

A CdTe phase modulator and low power RF sources have been used with Pb-salt tunable diode lasers operating near 8 microns to generate optical sidebands for high sensitivity absorption spectroscopy. Sweep averaged, first-derivative sample spectra of CH4 were acquired by wideband phase sensitive detection of the electrooptically (EO) generated carrier-sideband beat signal. EO generated beat signals were also used to frequency lock the TDL to spectral lines. This eliminates low frequency diode jitter, and avoids the excess laser linewidth broadening that accompanies TDL current modulation frequency locking methods.

Diode-pumped ytterbium-doped Sr{sub 5}(PO{sub 4}){sub 3}F laser performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marshall, C.D.; Smith, L.K.; Beach, R.J.

The performance of the first diode-pumped Yb{sup 3+}-doped Sr{sub 5}(PO{sub 4}){sup 3}F (Yb:S-FAP) solid-state laser is discussed. An InGaAs diode array has been fabricated that has suitable specifications for pumping a 3 x 3 x 30 mm Yb:S-FAP rod. The saturation fluence for diode pumping was deduced to be 5.5 J/cm{sup 2} for the particular 2.8 kW peak power diode array utilized in the studies. This is 2.5{times} higher than the intrinsic 2.2 J/cm{sup 2} saturation fluence as is attributed to the 6.5 nm bandwidth of the diode pump array. The small signal gain is consistent with the previously measuredmore » emission cross section of 6.0 {times} 10{sup {minus}20} cm{sup 2}, obtained from a narrowband-laser pumped gain experiment. Up to 1.7 J/cm{sup 3} of stored energy density was achieved in a 6 x 6 x 44 mm Yb:S-FAP amplifier rod. In a free running configuration, diode-pumped slope efficiencies up to 43% (laser output energy/absorbed pump energy) were observed with output energies up to {approximately}0.5 J per 1 ms pulse. When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz with 500 {micro}s pulses.« less

Resonantly diode-pumped continuous-wave and Q-switched Er:YAG laser at 1645 nm.

PubMed

Chang, N W H; Simakov, N; Hosken, D J; Munch, J; Ottaway, D J; Veitch, P J

2010-06-21

We describe an efficient Er:YAG laser that is resonantly pumped using continuous-wave (CW) laser diodes at 1470 nm. For CW lasing, it emits 6.1 W at 1645 nm with a slope efficiency of 36%, the highest efficiency reported for an Er:YAG laser that is pumped in this manner. In Q-switched operation, the laser produces diffraction-limited pulses with an average power of 2.5 W at 2 kHz PRF. To our knowledge this is the first Q-switched Er:YAG laser resonantly pumped by CW laser diodes.

High repetition-rate Q-switched and intracavity doubled diode-pumped Nd:YAG laser

NASA Technical Reports Server (NTRS)

Hemmati, Hamid; Lesh, James R.

1992-01-01

A Nd:YAG laser was end pumped with 2.2 W of continuous-wave (CW) diode laser output. Efficient operation of the laser at high repetition rates was emphasized. This laser provides 890 mW of TEM00 CW output at 1064 nm, and 340 mW of 532 nm average power at a Q-switched repetition rate of 25 kHz. Experimental data are compared with analysis.

Femtosecond Cr:LiSAF and Cr:LiCAF lasers pumped by tapered diode lasers.

PubMed

Demirbas, Umit; Schmalz, Michael; Sumpf, Bernd; Erbert, Götz; Petrich, Gale S; Kolodziejski, Leslie A; Fujimoto, James G; Kärtner, Franz X; Leitenstorfer, Alfred

2011-10-10

We report compact, low-cost and efficient Cr:Colquiriite lasers that are pumped by high brightness tapered laser diodes. The tapered laser diodes provided 1 to 1.2 W of output power around 675 nm, at an electrical-to-optical conversion efficiency of about 30%. Using a single tapered diode laser as the pump source, we have demonstrated output powers of 500 mW and 410 mW together with slope efficiencies of 47% and 41% from continuous wave (cw) Cr:LiSAF and Cr:LiCAF lasers, respectively. In cw mode-locked operation, sub-100-fs pulse trains with average power between 200 mW and 250 mW were obtained at repetition rates around 100 MHz. Upon pumping the Cr:Colquiriite lasers with two tapered laser diodes (one from each side of the crystal), we have observed scaling of cw powers to 850 mW in Cr:LiSAF and to 650 mW in Cr:LiCAF. From the double side pumped Cr:LiCAF laser, we have also obtained ~220 fs long pulses with 5.4 nJ of pulse energy at 77 MHz repetition rate. These are the highest energy levels reported from Cr:Colquiriite so far at these repetition rates. Our findings indicate that tapered diodes in the red spectral region are likely to become the standard pump source for Cr:Colquiriite lasers in the near future. Moreover, the simplified pumping scheme might facilitate efficient commercialization of Cr:Colquiriite systems, bearing the potential to significantly boost applications of cw and femtosecond lasers in this spectral region (750-1000 nm).

Self-mode-locking operation of a diode-end-pumped Tm:YAP laser with watt-level output power

NASA Astrophysics Data System (ADS)

Zhang, Su; Zhang, Xinlu; Huang, Jinjer; Wang, Tianhan; Dai, Junfeng; Dong, Guangzong

2018-03-01

We report on a high power continuous wave (CW) self-mode-locked Tm:YAP laser pumped by a 792 nm laser diode. Without any additional mode-locking elements in the cavity, stable and self-starting mode-locking operation has been realized. The threshold pump power of the CW self-mode-locked Tm:YAP laser is only 5.4 W. The maximum average output power is as high as 1.65 W at the pump power of 12 W, with the repetition frequency of 468 MHz and the center wavelength of 1943 nm. To the best of our knowledge, this is the first CW self-mode-locked Tm:YAP laser. The experiment results show that the Tm:YAP crystal is a promising gain medium for realizing the high power self-mode-locking operation at 2 µm.

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties. Part 2; Dynamic Breakdown Properties

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian

1999-01-01

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

CW and femtosecond operation of a diode-pumped Yb:BaY(2)F(8) laser.

PubMed

Galzerano, G; Coluccelli, N; Gatti, D; Di Lieto, A; Tonelli, M; Laporta, P

2010-03-15

We report for the first time on laser action of a diode-pumped Yb:BaY(2)F(8) crystal. Both CW and femtosecond operations have been demonstrated at room-temperature conditions. A maximum output power of 0.56 W, a slope efficiency of 34%, and a tunability range from 1013 to 1067 nm have been obtained in CW regime. Transform-limited pulse trains with a minimum duration of 275 fs, an average power of 40 mW, and a repetition rate of 83 MHz have been achieved in a passive mode-locked regime using a semiconductor saturable absorber mirror.

Diode pumped solid-state laser oscillators for spectroscopic applications

NASA Technical Reports Server (NTRS)

Byer, R. L.; Basu, S.; Fan, T. Y.; Kozlovsky, W. J.; Nabors, C. D.; Nilsson, A.; Huber, G.

1987-01-01

The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

The Mercury Project: A High Average Power, Gas-Cooled Laser For Inertial Fusion Energy Development

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bayramian, A; Armstrong, P; Ault, E

Hundred-joule, kilowatt-class lasers based on diode-pumped solid-state technologies, are being developed worldwide for laser-plasma interactions and as prototypes for fusion energy drivers. The goal of the Mercury Laser Project is to develop key technologies within an architectural framework that demonstrates basic building blocks for scaling to larger multi-kilojoule systems for inertial fusion energy (IFE) applications. Mercury has requirements that include: scalability to IFE beamlines, 10 Hz repetition rate, high efficiency, and 10{sup 9} shot reliability. The Mercury laser has operated continuously for several hours at 55 J and 10 Hz with fourteen 4 x 6 cm{sup 2} ytterbium doped strontiummore » fluoroapatite (Yb:S-FAP) amplifier slabs pumped by eight 100 kW diode arrays. The 1047 nm fundamental wavelength was converted to 523 nm at 160 W average power with 73% conversion efficiency using yttrium calcium oxy-borate (YCOB).« less

Experimental investigation of high power pulsed 2.8 μm Er3+-doped ZBLAN fiber lasers

NASA Astrophysics Data System (ADS)

Shen, Yanlong; Wang, Yishan; Huang, Ke; Luan, Kunpeng; Chen, Hongwei; Tao, Mengmeng; Yu, Li; Yi, Aiping; Si, Jinhai

2017-05-01

We report on the recent progress on high power pulsed 2.8 μm Er3+-doped ZBLAN fiber laser through techniques of passively and actively Q-switching in our research group. In passively Q-switched operation, a diode-cladding-pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) was demonstrated. Stable pulse train was produced at a slope efficient of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ. The maximum peak power was calculated to be 21.9 W. In actively Q-switched operation, a diode-pumped actively Q-switched Er3+-doped ZBLAN fiber laser at 2.8 μm with an optical chopper was reported. The maximum laser pulse energy of up to 130 μJ and a pulse width of 127.3 ns at a repetition rate of 10 kHz with an operating wavelength of 2.78 μm was obtained, yielding the maximum peak power of exceeding 1.1 kW.

Characterisation of flash X-ray source generated by Kali-1000 Pulse Power System

NASA Astrophysics Data System (ADS)

Satyanarayana, N.; Durga Prasada Rao, A.; Mittal, K. C.

2016-02-01

The electron beam-driven Rod Pinch Diode (RPD) is presently fielded on KALI-1000 Pulse Power System at Bhabha Atomic Research Centre, Visakhapatnam and is a leading candidate for future flash X-ray radiographic sources. The diode is capable of producing less than 2-mm radiation spot sizes and greater than 350 milli rads of dose measured at 1 m from the X-ray source. KALI-1000 Pulse Power Source is capable of delivering up to 600 kV using a Tesla Transformer with Demineralized Insulated Transmission Line (DITL), the diode typically operates between 250-330 kV . Since the radiation dose has a power-law dependence on diode voltage, this limits the dose production on KALI-1000 system. Radiation dose with angular variation is measured using thermoluminescent detectors (TLD's) and the X-ray spot size is measured using pin hole arrangement with image plate (IP) to obtain the time-integrated source profile as well as a time-resolved spot diagnostic. An X-ray pinhole camera was used to pick out where the energetic e-beam connects to the anode. Ideally the diode should function such that the radiation is emitted from the tip. The camera was mounted perpendicular to the machine's axis to view the radiation from the tip. Comparison of the spot sizes of the X-ray sources obtained by the pin hole and rolled edge arrangements was carried and results obtained by both the techniques are with in ± 10% of the average values.

Highly stable self-pulsed operation of an Er:Lu2O3 ceramic laser at 2.7 µm

NASA Astrophysics Data System (ADS)

Wang, Li; Huang, Haitao; Shen, Deyuan; Zhang, Jian; Chen, Hao; Tang, Dingyuan

2017-04-01

We report on the highly stable self-pulsed operation of a 2.74 µm Er:Lu2O3 ceramic laser pumped by a wavelength locked narrow bandwidth 976 nm laser diode. The operating pulse repetition rate is continuously tunable from 126 kHz to 270 kHz depending on the pump power level. For 12.3 W of absorbed diode pump power, the Er:Lu2O3 ceramic laser generates 820 mW of average output power at a 270 kHz repetition rate and with a pulse duration of 183 ns. The corresponding pulse-to-pulse amplitude fluctuation is estimated to be less than 0.7%. In the continues-wave (CW) mode of operation, the laser yields over 1.3 W of output power with a slope efficiency of 11.9% with respect to the 976 nm pump power.

Efficient 10 kW diode-pumped Nd:YAG rod laser

NASA Astrophysics Data System (ADS)

Akiyama, Yasuhiro; Takada, Hiroyuki; Sasaki, Mitsuo; Yuasa, Hiroshi; Nishida, Naoto

2003-03-01

As a tool for high speed and high precision material processing such as cutting and welding, we developed a rod-type all-solid-state laser with an average power of more than 10 kW, an electrical-optical efficiency of more than 20%, and a laser head volume of less than 0.05 m3. We developed a highly efficient diode pumped module, and successfully obtained electrical-optical efficiencies of 22% in CW operation and 26% in QCW operation at multi-kW output powers. We also succeeded to reduce the laser head volume, and obtained the output power of 12 kW with an efficiency of 23%, and laser head volume of 0.045 m3. We transferred the technology to SHIBAURA mechatronics corp., who started to provide the LD pumped Nd:YAG laser system with output power up to 4.5 kW. We are now continuing development for further high power laser equipment.

LD-pumped actively Q-switched c-cut Nd:GdVO4 self-Raman laser operating at 1166 and 1176 nm

NASA Astrophysics Data System (ADS)

Sun, Xinzhi; Zhang, Xihe; Li, Shutao; Dong, Yuan

2017-12-01

A laser diode pumped actively Q-switched c-cut Nd:GdVO4 self-Raman laser is experimentally investigated. Simultaneous pulse outputs at 1166 nm and 1176 nm corresponding to the Raman shifts of 807 and 882 cm-1 are acquired. At the pulse repetition frequency (PRF) of 20 kHz, the maximum output power is 103 mW at 1166 nm with the incident pump power of 2.31 W, while 1176 nm output power reaches 530 mW with the incident pump power of 4.11 W. The maximum output power of Raman laser is 570 mW with the incident pump power of 4.11 W and the PRF of 30 kHz. With the incident pump power of 3.67 W and the PRF of 30 kHz, the highest diode-to-Stokes optical conversion efficiency of 14.9% is obtained with the corresponding average output power of 547 mW.

Acousto-optic modulation in diode pumped solid state lasers

NASA Astrophysics Data System (ADS)

Jabczynski, Jan K.; Zendzian, Waldemar; Kwiatkowski, Jacek

2007-02-01

The main properties of acousto-optic modulators (AOM) applied in laser technology are presented and discussed in the paper. The critical review of application of AOMs in several types of diode pumped solid state lasers (DPSSL) is given. The short description of few DPSSLs developed in our group is presented in the following chapters of the paper. The parameters of a simple AO-Q-switched Nd:YVO 4 laser (peak power up to 60 kW, pulse duration of 5-15 ns, repetition rate in the range 10-100 kHz, with average power above 5 W) are satisfactory for different application as follows: higher harmonic generation, pumping of 'eye-safe' OPOs etc. The achieved brightness of 10 17 W/m2/srd is comparable to the strongest technological Q-switched lasers of kW class of average power. The main aim of paper is to present novel type of lasers with acousto-optic modulation namely: AO-q-switched and mode locked (AO-QML) lasers. We have designed the 3.69-m long Z-type resonator of the frequency matched to the RF frequency of AOM. As a gain medium the Nd:YVO 4 crystal end pumped by 20 W laser diode was applied. The energy of envelope of QML pulse train was up to 130 μJ with sub-nanosecond mode locked pulse of maximum 30-μJ energy.

Mass modeling for electrically powered space-based Yb:YAG lasers

NASA Astrophysics Data System (ADS)

Fitzgerald, Kevin F.; Leshner, Richard B.; Winsor, Harry V.

2000-05-01

An estimate for the mass of a nominal high-energy laser system envisioned for space applications is presented. The approach features a diode pumped solid state Yb:YAG laser. The laser specifications are10 MW average output power, and periods of up to 100 seconds continuous, full-power operation without refueling. The system is powered by lithium ion batteries, which are recharged by a solar array. The power requirements for this system dominate over any fixed structural features, so the critical issues in scaling a DPSSL to high power are made transparent. When based on currently available space qualified batteries, the design mass is about 500 metric tons. Therefore, innovations are required before high power electrical lasers will be serious contenders for use in space systems. The necessary innovations must improve the rate at which lithium ion batteries can output power. Masses for systems based on batteries that should be available in the near future are presented. This analysis also finds that heating of the solid state lasing material, cooling of the diode pump lasers and duty cycle are critical issues. Features dominating the thermal control requirements are the heat capacity of garnet, the operational temperature range of the system, and the required cooling time between periods of full operation. The duty cycle is a critical factor in determining both the mass of the diode array needed, and the mass of the power supply system.

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

NASA Astrophysics Data System (ADS)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Seeing laser scalpel: a novel monolithic high-power diode pumped Tm:YAG laser system at 2.02 μm with double-clad fiber combined OCT

NASA Astrophysics Data System (ADS)

Messner, Manuel; Heinrich, Arne; Hagen, Clemens; Unterrainer, Karl

2017-02-01

We report on a novel monolithic high-power diode pumped Tm:YAG laser at 2.02 μm. The pulsed laser generates average output power and pulse energy of beyond 90W and 900mJ in 400 μs pulses, respectively. This wavelength allows usage of standard fused silica fibers and optics, a price competitive solution for minimally-invasive endoscopic surgery. Recent developments in double-clad fiber combiners enable a rugged delivery system for the laser and the OCT ideal for a seeing laser scalpel. This gives the possibility to detect in-depth underlying tissue not yet ablated by the laser in a 2D or 3D fashion with micrometer resolution.

Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

PubMed Central

Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

2016-01-01

A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

Ex vivo evaluation of super pulse diode laser system with smart temperature feedback for contact soft-tissue surgery

NASA Astrophysics Data System (ADS)

Yaroslavsky, Ilya; Boutoussov, Dmitri; Vybornov, Alexander; Perchuk, Igor; Meleshkevich, Val; Altshuler, Gregory

2018-02-01

Until recently, Laser Diodes (LD) have been limited in their ability to deliver high peak power levels, which, in turn, limited their clinical capabilities. New technological developments made possible advent of "super pulse" LD (SPLD). Moreover, advanced means of smart thermal feedback enable precise control of laser power, thus ensuring safe and optimally efficacious application. In this work, we have evaluated a prototype SPLD system ex vivo. The device provided up to 25 W average and up to 150 W pulse power at 940 nm wavelength. The laser was operated in the thermal feedback-controlled mode, where power of the laser was varied automatically as a function of real-time thermal feedback to maintain constant tip temperature. The system was also equipped with a fiber tip initiated with advanced TiO2 /tungsten technique. Evaluation methods were designed to assess: 1) Speed and depth of cutting; 2) Dimensions of coagulative margin. The SPLD system was compared with industry-leading conventional diode and CO2 devices. The results indicate that the SPLD system provides increase in speed of controlled cutting by a factor of >2 in comparison with the conventional diode laser and approaching that of CO2 device. The produced ratio of the depth of cut to the thermal damage margin was significantly higher than conventional diodes and close to that of the CO2 system, suggesting optimal hemostasis conditions. SPLD technology with real-time temperature control has a potential for creating a new standard of care in the field of precision soft tissue surgery.

Compact diode-pumped continuous-wave and passively Q-switched Nd:GYSO laser at 1.07 μm

NASA Astrophysics Data System (ADS)

Lin, Zhi; Huang, Xiaoxu; Lan, Jinglong; Cui, Shengwei; Wang, Yi; Xu, Bin; Luo, Zhengqian; Xu, Huiying; Cai, Zhiping; Xu, Xiaodong; Zhang, Xiaoyan; Wang, Jun; Xu, Jun

2016-08-01

We report diode-pumped continuous-wave (CW) and Q-switched Nd:GYSO lasers using a compact two-mirror linear laser cavity. Single-wavelength laser emissions at 1074.11 nm with 4.1-W power and at 1058.27 nm with 1.47-W power have been obtained in CW mode. The slope efficiencies with respect to the absorbed pump powers are 48.5% and 22.9%, respectively. Wavelength tunability is also demonstrated with range of about 8 nm. Using a MoS2 saturable absorber, maximum average output power up to 410 mW at 1074 nm can be yielded with absorbed pump power 6.41 W and the maximum pulse energy reaches 1.20 μJ with pulse repetition rate of 342.5 kHz and shortest pulse width of 810 ns. The CW laser results represent the best laser performance and the Q-switching also present the highest output power for Q-switched Nd3+ lasers with MoS2 as saturable absorber.

The HALNA project: Diode-pumped solid-state laser for inertial fusion energy

NASA Astrophysics Data System (ADS)

Kawashima, T.; Ikegawa, T.; Kawanaka, J.; Miyanaga, N.; Nakatsuka, M.; Izawa, Y.; Matsumoto, O.; Yasuhara, R.; Kurita, T.; Sekine, T.; Miyamoto, M.; Kan, H.; Furukawa, H.; Motokoshi, S.; Kanabe, T.

2006-06-01

High-enery, rep.-rated, diode-pumped solid-state laser (DPSSL) is one of leading candidates for inertial fusion energy driver (IFE) and related laser-driven high-field applications. The project for the development of IFE laser driver in Japan, HALNA (High Average-power Laser for Nuclear Fusion Application) at ILE, Osaka University, aims to demonstrate 100-J pulse energy at 10 Hz rep. rate with 5 times diffraction limited beam quality. In this article, the advanced solid-state laser technologies for one half scale of HALNA (50 J, 10 Hz) are presented including thermally managed slab amplifier of Nd:phosphate glass and zig-zag optical geometry, and uniform, large-area diode-pumping.

Time-and-space resolved comparison of plasma expansion velocities in high-power diodes with velvet cathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Jie; Shu Ting; Fan Yuwei

2013-01-28

Time-and-space resolved comparison of the expansion velocities of plasmas in the planar diode with cathodes made of carbon velvet and polymer velvet has been performed. The diode was powered by a 200 kV, 110 ns pulse, and the peak current density was nearly 477 A/cm{sup 2}. A four-channel high speed framing camera (HSFC) was used to observe the formation and subsequent movement of the cathode plasmas. More accurate and valuable information about the two-dimensional (radial and axial) velocity components of the cathode plasmas was also acquired by utilizing the digital image processing methods. Additionally, the perveance model based on themore » Child-Langmuir law was used to calculate the expansion velocities of the diode plasmas from voltage and current profiles. Results from the two diagnostics were compared. Comparing the average values of the radial and axial velocity components indicated that the former was much larger than the latter during the initial period of the current. It was also found that the radial velocity of the carbon velvet cathode (190 cm/{mu}s) was much larger than that (90 cm/{mu}s) of the polymer velvet cathode. Moreover, the average values of both the radial and axial velocity components of the carbon velvet cathode were typically in the range of 2.5 {+-} 1.5 cm/{mu}s, which were smaller than that of the polymer velvet cathode during the current flattop. These results, together with the comparison of calculated values from the perveance model, indicated that the diode with carbon velvet cathode was more robust as compared with the polymer velvet cathode for the same electron current densities.« less

Direct diode-pumped Kerr-lens mode-locked Ti:sapphire laser

PubMed Central

Durfee, Charles G.; Storz, Tristan; Garlick, Jonathan; Hill, Steven; Squier, Jeff A.; Kirchner, Matthew; Taft, Greg; Shea, Kevin; Kapteyn, Henry; Murnane, Margaret; Backus, Sterling

2012-01-01

We describe a Ti:sapphire laser pumped directly with a pair of 1.2W 445nm laser diodes. With over 30mW average power at 800 nm and a measured pulsewidth of 15fs, Kerr-lens-modelocked pulses are available with dramatically decreased pump cost. We propose a simple model to explain the observed highly stable Kerr-lens modelocking in spite of the fact that both the mode-locked and continuous-wave modes are smaller than the pump mode in the crystal. PMID:22714433

Observation of enhanced thermal lensing due to near-Gaussian pump energy deposition in a laser-diode side-pumped Nd:YAG laser

NASA Technical Reports Server (NTRS)

Welford, David; Rines, David M.; Dinerman, Bradley J.; Martinsen, Robert

1992-01-01

The authors report operation of a laser-diode side-pumped Nd:YAG laser with a novel pumping geometry that ensures efficient conversion of pump energy into the TEM00 mode. Significant enhancement of thermally induced lensing due to the near-Gaussian energy deposition profile of the pump radiation was observed. An induced lens of approximately 3.2-m focal length was measured at average incident pump powers of only 3.2 W (corresponding to a 0.6 W heat load).

Generation of Ince-Gaussian beams in highly efficient, nanosecond Cr, Nd:YAG microchip lasers

NASA Astrophysics Data System (ADS)

Dong, J.; Ma, J.; Ren, Y. Y.; Xu, G. Z.; Kaminskii, A. A.

2013-08-01

Direct generation of higher-order Ince-Gaussian (IG) beams from laser-diode end-pumped Cr, Nd:YAG self-Q-switched microchip lasers was achieved with high efficiency and high repetition rate. An average output power of over 2 W was obtained at an absorbed pump power of 8.2 W a corresponding optical-to-optical efficiency of 25% was achieved. Various IG modes with nanosecond pulse width and peak power of over 2 kW were obtained in laser-diode pumped Cr, Nd:YAG microchip lasers under different pump power levels by applying a tilted, large area pump beam. The effect of the inversion population distribution induced by the tilted pump beam and nonlinear absorption of Cr4+-ions for different pump power levels on the oscillation of higher-order IG modes in Cr, Nd:YAG microchip lasers is addressed. The higher-order IG mode oscillation has a great influence on the laser performance of Cr, Nd:YAG microchip lasers.

Quantum-dot saturable absorber and Kerr-lens mode-locked Yb:KGW laser with >450  kW of peak power.

PubMed

Akbari, R; Zhao, H; Fedorova, K A; Rafailov, E U; Major, A

2016-08-15

The hybrid action of quantum-dot saturable absorber and Kerr-lens mode locking in a diode-pumped Yb:KGW laser was demonstrated. Using a quantum-dot saturable absorber with a 0.7% (0.5%) modulation depth, the mode-locked laser delivered 90 fs (93 fs) pulses with 3.2 W (2.9 W) of average power at the repetition rate of 77 MHz, corresponding to 462 kW (406 kW) of peak power and 41 nJ (38 nJ) of pulse energy. To the best of our knowledge, this represents the highest average and peak powers generated to date from quantum-dot saturable absorber-based mode-locked lasers.

Experimental investigation on a diode-pumped cesium-vapor laser stably operated at continuous-wave and pulse regime.

PubMed

Chen, Fei; Xu, Dongdong; Gao, Fei; Zheng, Changbin; Zhang, Kuo; He, Yang; Wang, Chunrui; Guo, Jin

2015-05-04

Employing a fiber-coupled diode-laser with a center wavelength of 852.25 nm and a line width of 0.17 nm, experimental investigation on diode-end-pumped cesium (Cs) vapor laser stably operated at continuous-wave (CW) and pulse regime is carried out. A 5 mm long cesium vapor cell filled with 60 kPa helium and 20 kPa ethane is used as laser medium. Using an output coupler with reflectivity of 48.79%, 1.26 W 894.57 nm CW laser is obtained at an incident pump power of 4.76 W, corresponding an optical-optical efficiency of 26.8% and a slope-efficiency of 28.8%, respectively. The threshold temperature is 67.5 °C. Stable pulsed cesium laser with a maximum average output power of 2.6 W is obtained at a repetition rate of 76 Hz, and the pulse repetition rate can be extend to 1 kHz with a pulse width of 18 μs.

Multi-photon microscopy with a low-cost and highly efficient Cr:LiCAF laser

PubMed Central

Sakadić, Sava; Demirbas, Umit; Mempel, Thorsten R.; Moore, Anna; Ruvinskaya, Svetlana; Boas, David A.; Sennaroglu, Alphan; Kartner, Franz X.; Fujimoto, James G.

2009-01-01

Multi-photon microscopy (MPM) is a powerful tool for biomedical imaging, enabling molecular contrast and integrated structural and functional imaging on the cellular and subcellular level. However, the cost and complexity of femtosecond laser sources that are required in MPM are significant hurdles to widespread adoption of this important imaging modality. In this work, we describe femtosecond diode pumped Cr:LiCAF laser technology as a low cost alternative to femtosecond Ti:Sapphire lasers for MPM. Using single mode pump diodes which cost only $150 each, a diode pumped Cr:LiCAF laser generates ~70-fs duration, 1.8-nJ pulses at ~800 nm wavelengths, with a repetition rate of 100 MHz and average output power of 180 mW. Representative examples of MPM imaging in neuroscience, immunology, endocrinology and cancer research using Cr:LiCAF laser technology are presented. These studies demonstrate the potential of this laser source for use in a broad range of MPM applications. PMID:19065223

Miniaturized pulsed CO2 laser with sealed electron source

NASA Astrophysics Data System (ADS)

Bychkov, Y. I.; Orlovskiy, V. M.; Osipov, V. V.; Poteryayev, A. G.

1984-04-01

A new miniature electron beam-controlled CO2 laser (the MIG-3) contains an electron accelerator, gas cell and DC supply in one large unit (0.22 x 0,16 x 0.7 m) and the accelerator power supply and laser control panel in a second smaller unit. The overall weight of the instrument in 30 kg. The electron beam is controlled by four vacuum diodes in parallel; a 180 KV pulse is fed to the vacuum diode inputs from a "NORA" series-produced X-ray source (the MIRA-3D) also is used). The total electron beam current from all diodes was 600 A following the foil with a half-height width of 10 ns. The lasing medium is CO2:N2 - 1:1 at 4.5 atm. The maximum stimulated emission pulse energy was 1 J with an efficiency of 8% when the pressure was 4 atm. With a pulse repetition rate of 4 Hz, the average power consumption of the unit was 100 W.

Application of a 980-nanometer diode laser in neuroendoscopy: a case series.

PubMed

Reis, Rodolfo Casimiro; Teixeira, Manoel Jacobsen; Mancini, Marilia Wellichan; Almeida-Lopes, Luciana; de Oliveira, Matheus Fernandes; Pinto, Fernando Campos Gomes

2016-02-01

Ventricular neuroendoscopy represents an important advance in the treatment of hydrocephalus. High-power (surgical) Nd:YAG laser and low-level laser therapy (using 685-nm-wavelength diode laser) have been used in conjunction with neuroendoscopy with favorable results. This study evaluated the use of surgical 980-nm-wavelength diode laser for the neuroendoscopic treatment of ventricular diseases. Nine patients underwent a neuroendoscopic procedure with 980-nm diode laser. Complications and follow-up were recorded. Three in-hospital postoperative complications were recorded (1 intraventricular hemorrhage and 2 meningitis cases). The remaining 6 patients had symptom improvement after endoscopic surgery and were discharged from the hospital within 24-48 hours after surgery. Patients were followed for an average of 14 months: 1 patient developed meningitis and another died suddenly at home. The other patients did well and were asymptomatic until the last follow-up consultation. The 980-nm diode laser is considered an important therapeutic tool for endoscopic neurological surgeries. This study showed its application in different ventricular diseases.

The impact of plasma dynamics on the self-magnetic-pinch diode impedance

DOE PAGES

Bennett, Nichelle; Crain, M. Dale; Droemer, Darryl W.; ...

2015-03-20

In this study, the self-magnetic-pinch diode is being developed as an intense electron beam source for pulsed-power-driven x-ray radiography. The basic operation of this diode has long been understood in the context of pinched diodes, including the dynamic effect that the diode impedance decreases during the pulse due to electrode plasma formation and expansion. Experiments being conducted at Sandia National Laboratories' RITS-6 accelerator are helping to characterize these plasmas using time-resolved and time-integrated camera systems in the x-ray and visible. These diagnostics are analyzed in conjunction with particle-in-cell simulations of anode plasma formation and evolution. The results confirm the long-standingmore » theory of critical-current operation with the addition of a time-dependent anode-cathode gap length. Finally, the results may suggest that anomalous impedance collapse is driven by increased plasma radial drift, leading to larger-than-average ion v r × B θ acceleration into the gap.« less

Diode-pumped femtosecond mode-locked Nd, Y-codoped CaF2 laser

NASA Astrophysics Data System (ADS)

Zhu, Jiangfeng; Zhang, Lijuan; Gao, Ziye; Wang, Junli; Wang, Zhaohua; Su, Liangbi; Zheng, Lihe; Wang, Jingya; Xu, Jun; Wei, Zhiyi

2015-03-01

A passively mode-locked femtosecond laser based on an Nd, Y-codoped CaF2 disordered crystal was demonstrated. The Y3+-codoping in Nd : CaF2 markedly suppressed the quenching effect and improved the fluorescence quantum efficiency and emission spectra. With a fiber-coupled laser diode as the pump source, the continuous wave tuning range covering from 1042 to 1076 nm was realized, while the mode-locked operation generated 264 fs pulses with an average output power of 180 mW at a repetition rate of 85 MHz. The experimental results show that the Nd, Y-codoped CaF2 disordered crystal has potential in a new generation diode-pumped high repetition rate chirped pulse amplifier.

HiLASE: development of fully diode pumped disk lasers with high average power

NASA Astrophysics Data System (ADS)

Divoky, M.; Smrz, M.; Chyla, M.; Sikocinski, P.; Severova, P.; Novák, O.; Huynh, J.; Nagisetty, S. S.; Miura, T.; Liberatore, C.; Pilař, J.; Slezak, O.; Sawicka, M.; Jambunathan, V.; Gemini, L.; Vanda, J.; Svabek, R.; Endo, A.; Lucianetti, A.; Rostohar, D.; Mason, P. D.; Phillips, P. J.; Ertel, K.; Banerjee, S.; Hernandez-Gomez, C.; Collier, J. L.; Mocek, T.

2015-02-01

An overview of Czech national R&D project HiLASE (High average power pulsed LASEr) is presented. The HiLASE project aims at development of pulsed DPSSL for hi-tech industrial applications. HiLASE will be a user oriented facility with several laser systems with output parameters ranging from a few picosecond pulses with energy of 5 mJ to 0.5 J and repetition rate of 1-100 kHz (based on thin disk technology) to systems with 100 J output energy in nanosecond pulses with repetition rate of 10 Hz (based on multi-slab technology).

High-repetition-rate widely tunable LiF : \\mathbf{\\mathsf{F}}_\\mathbf{\\mathsf{2}}^{-} color center lasers

NASA Astrophysics Data System (ADS)

Men, Shaojie; Liu, Zhaojun; Cong, Zhenhua; Rao, Han; Zhang, Sasa; Liu, Yang; Zverev, Petr G.; Konyushkin, Vasily A.; Zhang, Xingyu

2016-02-01

High-repetition-rate tunable LiF:\\text{F}2- color center lasers pumped by quasi-continuous-wave diode-side-pumped acousto-optically Q-switched Nd:YAG laser are demonstrated. Littrow-grating and Littman-grating tuning schemes are studied respectively. In the Littrow-grating scheme, the tuning range was 1085 nm to 1275 nm, and the maximal average output power was 275 mW. In the Littman-grating scheme, the tuning range was 1105.5 nm to 1215.5 nm, and the maximal average output power was 135 mW.

A diode-pumped Tm:CaYAlO4 laser at 1851 nm

NASA Astrophysics Data System (ADS)

Lan, Jinglong; Guan, Xiaofeng; Xu, Bin; Moncorgé, Richard; Xu, Huiying; Cai, Zhiping

2017-07-01

Laser emission at ~1850 nm is of great interest for neural stimulation applications. In this letter, we report on the diode-pumped continuous-wave (CW) and Q-switched (QS) laser operation of Tm:CaYAlO4 at 1851 nm, for the first time to our knowledge. In the CW regime, a maximum output power up to 0.62 W is obtained with a laser slope efficiency of about 18.0%. Using a Cr:ZnSe saturable absorber, QS laser operation is achieved with a maximum average output power of 0.25 W, the narrowest pulse width of 107 ns and the highest repetition rate of 5.85 kHz. The corresponding pulse peak power and pulse energy are about 388 W and 42.8 µJ, respectively. In this Q-switched mode, wavelength tuning is also realized over about 3 nm by slightly tilting the saturable absorber.

Reliability of IGBT in a STATCOM for Harmonic Compensation and Power Factor Correction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopi Reddy, Lakshmi Reddy; Tolbert, Leon M; Ozpineci, Burak

With smart grid integration, there is a need to characterize reliability of a power system by including reliability of power semiconductors in grid related applications. In this paper, the reliability of IGBTs in a STATCOM application is presented for two different applications, power factor correction and harmonic elimination. The STATCOM model is developed in EMTP, and analytical equations for average conduction losses in an IGBT and a diode are derived and compared with experimental data. A commonly used reliability model is used to predict reliability of IGBT.

Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

NASA Astrophysics Data System (ADS)

Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

2017-02-01

High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

New Submount Requirement of Conductively Cooled Laser Diodes for Lidar Applications

NASA Technical Reports Server (NTRS)

Mo, S. Y.; Cutler, A. D.; Choi, S. H.; Lee, M. H.; Singh, U. N.

2000-01-01

New submount technology is essential for the development of conductively cooled high power diode laser. The simulation and experimental results indicate that thermal conductivity of submount for high power laser-diode must be at least 600 W/m/k or higher for stable operation. We have simulated several theoretical thermal model based on new submount designs and characterized high power diode lasers to determine temperature effects on the performances of laser diodes. The characterization system measures the beam power, output beam profile, temperature distribution, and spectroscopic property of high power diode laser. The characterization system is composed of four main parts: an infrared imaging camera, a CCD camera, a monochromator, and a power meter. Thermal characteristics of two commercial-grade CW 20-W diode laser bars with open heat-sink type were determined with respect to the line shift of emission spectra and beam power stability. The center wavelength of laser emission has a tendency to shift toward longer wavelength as the driving current and heat sink temperature are increased. The increase of heat sink temperature decreases the output power of the laser bar too. Such results lay the guidelines for the design of new submount for high power laser-diodes.

Diode-pumped Kerr-lens mode-locked femtosecond Yb:YAG ceramic laser

NASA Astrophysics Data System (ADS)

Zi-Ye, Gao; Jiang-Feng, Zhu; Ke, Wang; Jun-Li, Wang; Zhao-Hua, Wang; Zhi-Yi, Wei

2016-02-01

We experimentally demonstrated a diode-pumped Kerr-lens mode-locked femtosecond laser based on an Yb:YAG ceramic. Stable laser pulses with 97-fs duration, 2.8-nJ pulse energy, and 320-mW average power were obtained. The femtosecond oscillator operated at a central wavelength of 1049 nm and a repetition rate of 115 MHz. To the best of our knowledge, this is the first demonstration of a Kerr-lens mode-locked operation in a diode-pumped Yb:YAG ceramic laser with sub-100 fs pulse duration. Project supported by the National Major Scientific Instrument Development Project of China (Grant No. 2012YQ120047), the National Natural Science Foundation of China (Grant No. 61205130), and the Fundamental Research Funds for the Central Universities, China (Grant No. JB140502).

Large size crystalline vs. co-sintered ceramic Yb(3+):YAG disk performance in diode pumped amplifiers.

PubMed

Albach, Daniel; Chanteloup, Jean-Christophe

2015-01-12

A comprehensive experimental benchmarking of Yb(3+):YAG crystalline and co-sintered ceramic disks of similar thickness and doping level is presented in the context of high average power laser amplifier operation. Comparison is performed considering gain, depolarization and wave front deformation quantitative measurements and analysis.

Design and characterization of GaN p-i-n diodes for betavoltaic devices

NASA Astrophysics Data System (ADS)

Khan, Muhammad R.; Smith, Joshua R.; Tompkins, Randy P.; Kelley, Stephen; Litz, Marc; Russo, John; Leathersich, Jeff; Shahedipour-Sandvik, Fatemeh (Shadi); Jones, Kenneth A.; Iliadis, Agis

2017-10-01

The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm2 and a reverse leakage current of -0.14 mA/cm2 at -10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6 keV average) to 63Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to 3H and 63Ni beta sources respectively.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: A super junction SiGe low-loss fast switching power diode

NASA Astrophysics Data System (ADS)

Ma, Li; Gao, Yong

2009-01-01

This paper proposes a novel super junction (SJ) SiGe switching power diode which has a columnar structure of alternating p- and n- doped pillar substituting conventional n- base region and has far thinner strained SiGe p+ layer to overcome the drawbacks of existing Si switching power diode. The SJ SiGe diode can achieve low specific on-resistance, high breakdown voltages and fast switching speed. The results indicate that the forward voltage drop of SJ SiGe diode is much lower than that of conventional Si power diode when the operating current densities do not exceed 1000 A/cm2, which is very good for getting lower operating loss. The forward voltage drop of the Si diode is 0.66 V whereas that of the SJ SiGe diode is only 0.52 V at operating current density of 10 A/cm2. The breakdown voltages are 203 V for the former and 235 V for the latter. Compared with the conventional Si power diode, the reverse recovery time of SJ SiGe diode with 20 per cent Ge content is shortened by above a half and the peak reverse current is reduced by over 15%. The SJ SiGe diode can remarkably improve the characteristics of power diode by combining the merits of both SJ structure and SiGe material.

The Mercury Laser System: An Average power, gas-cooled, Yb:S-FAP based system with frequency conversion and wavefront correction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bibeau, C; Bayramian, A; Armstrong, P

We report on the operation of the Mercury laser with fourteen 4 x 6 cm{sup 2} Yb:S-FAP amplifier slabs pumped by eight 100 kW peak power diode arrays. The system was continuously run at 55 J and 10 Hz for several hours, (2 x 10{sup 5} cumulative shots) with over 80% of the energy in a 6 times diffraction limited spot at 1.047 um. Improved optical quality was achieved in Yb:S-FAP amplifiers with magneto-rheological finishing, a deterministic polishing method. In addition, average power frequency conversion employing YCOB was demonstrated at 50% conversion efficiency or 22.6 J at 10 Hz.

Treatment of burning mouth syndrome with a low-level energy diode laser.

PubMed

Yang, Hui-Wen; Huang, Yu-Feng

2011-02-01

To test the therapeutic efficacy of low-level energy diode laser on burning mouth syndrome. Burning mouth syndrome is characterized by burning and painful sensations in the mouth, especially the tongue, in the absence of significant mucosal abnormalities. Although burning mouth syndrome is relatively common, little is known regarding its etiology and pathophysiology. As a result, no treatment is effective in all patients. Low-level energy diode laser therapy has been used in a variety of chronic and acute pain conditions, including neck, back and myofascial pain, degenerative osteoarthritis, and headache. A total of 17 patients who had been diagnosed with burning mouth syndrome were treated with an 800-nm wavelength diode laser. A straight handpiece was used with an end of 1-cm diameter with the fiber end standing 4 cm away from the end of handpiece. When the laser was applied, the handpiece directly contacted or was immediately above the symptomatic lingual surface. The output used was 3 W, 50 msec intermittent pulsing, and a frequency of 10 Hz, which was equivalent to an average power of 1.5 W/cm(2) (3 W × 0.05 msec × 10 Hz = 1.5 W/cm(2)). Depending on the involved area, laser was applied to a 1-cm(2) area for 70 sec until all involved area was covered. Overall pain and discomfort were analyzed with a 10-cm visual analogue scale. All patients received diode laser therapy between one and seven times. The average pain score before the treatment was 6.7 (ranging from 2.9 to 9.8). The results showed an average reduction in pain of 47.6% (ranging from 9.3% to 91.8%). The burning sensation remained unchanged for up to 12 months. Low-level energy diode laser may be an effective treatment for burning mouth syndrome.

2.1 μm high-power laser diode beam combining(Conference Presentation)

NASA Astrophysics Data System (ADS)

Berrou, Antoine P. C.; Elder, Ian F.; Lamb, Robert A.; Esser, M. J. Daniel

2016-10-01

Laser power and brightness scaling, in "eye safe" atmospheric transmission windows, is driving laser system research and development. High power lasers with good beam quality, at wavelength around 2.1 µm, are necessary for optical countermeasure applications. For such applications, focusing on efficiency and compactness of the system is mandatory. In order to cope with these requirements, one must consider the use of laser diodes which emit directly in the desired spectral region. The challenge for these diodes is to maintain a good beam quality factor as the output power increases. 2 µm diodes with excellent beam quality in both axes are available with output powers of 100 mW. Therefore, in order to reach multi-watt of average output power, broad-area single emitters and beam combining becomes relevant. Different solutions have been implemented in the 1.9 to 2 µm wavelength range, one of which is to stack multiple emitter bars reaching more than one hundred watt, while another is a fibre coupled diode module. The beam propagation factor of these systems is too high for long atmospheric propagation applications. Here we describe preliminary results on non-coherent beam combining of 2.1 µm high power Fabry-Perot GaSb laser diodes supplied by Brolis Semiconductors Ltd. First we evaluated single mode diodes (143 mW) with good beam quality (M2 < 1.5 for slow axis and < 1.1 for fast axis). Then we characterized broad-area single emitter diodes (808 mW) with an electrical-to-optical efficiency of 19 %. The emitter width was 90 µm with a cavity length of 1.5 mm. In our experiments we found that the slow axis multimode output beam consisted of two symmetric lobes with a total full width at half maximum (FWHM) divergence angle of 25 degrees, corresponding to a calculated beam quality factor of M2 = 25. The fast axis divergence was specified to be 44 degrees, with an expected beam quality factor close to the diffraction limit, which informed our selection of collimation lenses used in the experiment. We evaluated two broadband (1.8 - 3 µm) AR coated Geltech aspheric lenses with focal lengths of 1.87 mm and 4 mm, with numerical apertures of 0.85 and 0.56, respectively, as an initial collimation lens, followed by an additional cylindrical lens of focal length 100 mm for fully collimating the slow axis. Using D-shaped gold-coated mirrors, multiple single emitter beams are stacked in the fast axis direction with the objective that the combined beam has a beam propagation factor in the stacking direction close to the beam propagation factor of the slow axis of a single emitter, e.g. M2 of 20 to 25 in both axes. We further found that the output beam of a single emitter is highly linearly polarized along the slow axis, making it feasible to implement polarization beam combining techniques to increase the beam power by a factor two while maintaining the same beam quality. Along with full beam characterization, a power scaling strategy towards a multi-watt output power beam combining laser system will be presented.

Effect of interface layer on the performance of high power diode laser arrays

NASA Astrophysics Data System (ADS)

Zhang, Pu; Wang, Jingwei; Xiong, Lingling; Li, Xiaoning; Hou, Dong; Liu, Xingsheng

2015-02-01

Packaging is an important part of high power diode laser (HPLD) development and has become one of the key factors affecting the performance of high power diode lasers. In the package structure of HPLD, the interface layer of die bonding has significant effects on the thermal behavior of high power diode laser packages and most degradations and failures in high power diode laser packages are directly related to the interface layer. In this work, the effects of interface layer on the performance of high power diode laser array were studied numerically by modeling and experimentally. Firstly, numerical simulations using finite element method (FEM) were conducted to analyze the effects of voids in the interface layer on the temperature rise in active region of diode laser array. The correlation between junction temperature rise and voids was analyzed. According to the numerical simulation results, it was found that the local temperature rise of active region originated from the voids in the solder layer will lead to wavelength shift of some emitters. Secondly, the effects of solder interface layer on the spectrum properties of high power diode laser array were studied. It showed that the spectrum shape of diode laser array appeared "right shoulder" or "multi-peaks", which were related to the voids in the solder interface layer. Finally, "void-free" techniques were developed to minimize the voids in the solder interface layer and achieve high power diode lasers with better optical-electrical performances.

High Power High Efficiency Diode Laser Stack for Processing

NASA Astrophysics Data System (ADS)

Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan

2018-03-01

High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.

Gain-switched laser diode seeded Yb-doped fiber amplifier delivering 11-ps pulses at repetition rates up to 40-MHz

NASA Astrophysics Data System (ADS)

Ryser, Manuel; Neff, Martin; Pilz, Soenke; Burn, Andreas; Romano, Valerio

2012-02-01

Here, we demonstrate all-fiber direct amplification of 11 picosecond pulses from a gain-switched laser diode at 1063 nm. The diode was driven at a repetition rate of 40 MHz and delivered 13 μW of fiber-coupled average output power. For the low output pulse energy of 0.33 pJ we have designed a multi-stage core pumped preamplifier based on single clad Yb-doped fibers in order to keep the contribution of undesired amplified spontaneous emission as low as possible and to minimize temporal and spectral broadening. After the preamplifier we reduced the 40 MHz repetition rate to 1 MHz using a fiber coupled pulse-picker. The final amplification was done with a cladding pumped Yb-doped large mode area fiber and a subsequent Yb-doped rod-type fiber. With our setup we achieved amplification of 72 dBs to an output pulse energy of 5.7 μJ, pulse duration of 11 ps and peak power of >0.6 MW.

Characterization of zero-bias microwave diode power detectors at cryogenic temperature.

PubMed

Giordano, Vincent; Fluhr, Christophe; Dubois, Benoît; Rubiola, Enrico

2016-08-01

We present the characterization of commercial tunnel diode low-level microwave power detectors at room and cryogenic temperatures. The sensitivity as well as the output voltage noise of the tunnel diodes is measured as functions of the applied microwave power. We highlight strong variations of the diode characteristics when the applied microwave power is higher than a few microwatts. For a diode operating at 4 K, the differential gain increases from 1000 V/W to about 4500 V/W when the power passes from -30 dBm to -20 dBm. The diode white noise floor is equivalent to a Noise Equivalent Power of 0.8 pW/Hz and 8 pW/Hz at 4 K and 300 K, respectively. Its flicker noise is equivalent to a relative amplitude noise power spectral density Sα(1 Hz) = - 120 dB/Hz at 4 K. Flicker noise is 10 dB higher at room temperature.

High-power diode-pumped solid-state lasers for optical space communications

NASA Technical Reports Server (NTRS)

Koechner, Walter; Burnham, Ralph; Kasinski, Jeff; Bournes, Pat; Dibiase, Don; Le, Khoa; Marshall, Larry; Hays, Alan

1991-01-01

The design and performance of a large diode-pumped multi-stage Nd:YAG laser system for space and airborne applications will be described. The laser operates at a repetition rate of 40 Hz and produces an output either at 1.064 micron or 532 nm with an average power in the Q-switched mode of 30 W at the fundamental and 20 W at the second harmonic wavelength. The output beam is diffraction limited (TEM 00 mode) and can optionally also be operated in a single longitudinal mode. The output energy ranges from 1.25 Joule/pulse in the free lasing mode, 0.75 Joule in a 17 nsec Q-switched pulse, to 0.5 Joules/pulse at 532 nm. The overall electrical efficiency for the Q-switched second harmonic output is 4.

High beam quality of a Q-switched 2-µm Tm,Ho:LuVO4 laser

NASA Astrophysics Data System (ADS)

Wang, Wei; Yang, Xining; Shen, Yingjie; Li, Linjun; Zhou, Long; Yang, Yuqiang; Bai, Yunfeng; Xie, Wenqiang; Ye, Guangchao; Yu, Xiaoyang

2018-05-01

A diode-end-pumped 2.05-µm Q-switched Tm,Ho:LuVO4 laser is reported in this paper. The cryogenic Tm3+ (5.0 at.%),Ho3+ (0.5 at.%):LuVO4 crystal was pumped by an 800-nm laser diode. At a pulse repetition frequency of 10 kHz, the maximum average output power of 3.77 W was achieved at 77 K when an incident pump power of 14.7 W was used. The slope efficiency and optical-optical conversion efficiency were 28.3 and 25.6%, respectively. The maximum per pulse energy was 2.54 mJ for a pulse duration of 69.9 ns. The beam quality factor Mx 2 was approximately 1.17 and My 2 was approximately 1.01 for the Tm,Ho:LuVO4 laser.

Passively mode-locked high power Nd:GdVO4 laser with direct in-band pumping at 912 nm

NASA Astrophysics Data System (ADS)

Nadimi, Mohammad; Waritanant, Tanant; Major, Arkady

2018-01-01

We report on the first semiconductor saturable absorber mirror mode-locked Nd:GdVO4 laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power at 1063 nm with the pulse width of 16 ps at the repetition rate of 85.2 MHz. The optical-to-optical efficiency and slope efficiency in the mode-locked regime were calculated to be 49.6% and 67.4% with respect to the absorbed pump power, respectively. Due to the low quantum defect pumping the output power was limited only by the available pump power.

Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Oder, Tom N.; Kundeti, Krishna C.; Borucki, Nicholas; Isukapati, Sundar B.

2017-12-01

Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes. Post deposition annealing at 500 oC for up to 60 hours in vacuum was carried to further improve the contact properties. Optimum barrier height of 1.13 eV and ideality factor of 1.04 was obtained in contacts deposited at 200 oC and annealed for 60 hours. Under a reverse voltage bias of 400 V, the average leakage current on these set of diodes was 6.6 x 10-8 A. Based on the x-ray diffraction analysis, TiC, Ti5Si3 and Ti3SiC2 were formed at the Ti/SiC interface. These results could be beneficial to improving the performance of 4H-SiC Schottky diodes for high power and high temperature applications.

Every Good Virtue You Ever Wanted in a Q-switched Solid-state Laser and More: Monolithic, Diode-pumped, Self-q-switched, Highly Reproducible, Diffraction-limited Nd:yag Laser

NASA Technical Reports Server (NTRS)

Chen, Y. C.; Lee, K. K.

1993-01-01

The applications of Q-switched lasers are well known, for example, laser radar, laser remote sensing, satellite orbit determination, Moon orbit and 'moon quake' determination, satellite laser communication, and many nonlinear optics applications. Most of the applications require additional properties of the Q-switched lasers, such as single-axial and/or single-transverse mode, high repetition rate, stable pulse shape and pulse width, or ultra compact and rugged oscillators. Furthermore, space based and airborne lasers for lidar and laser communication applications require efficient, compact, lightweight, long-lived, and stable-pulsed laser sources. Diode-pumped solid-state lasers (DPSSL) have recently shown the potential for satisfying all of these requirements. We will report on the operating characteristics of a diode-pumped, monolithic, self-Q-switched Cr,Nd:YAG laser where the chromium ions act as a saturable absorber for the laser emission at 1064 nm. The pulse duration is 3.5 ns and the output is highly polarized with an extinction ratio of 700:1. It is further shown that the output is single-longitudinal-mode with transform-limited spectral line width without pulse-to-pulse mode competition. Consequently, the pulse-to-pulse intensity fluctuation is less than the instrument resolution of 0.25 percent. This self-stabilization mechanism is because the lasing mode bleaches the distributed absorber and establishes a gain-loss grating similar to that used in the distributed feedback semiconductor lasers. A repetition rate above 5 KHz has also been demonstrated. For higher power, this laser can be used for injection seeding an amplifier (or amplifier chain) or injection locking of a power oscillator pumped by diode lasers. We will discuss some research directions on the master oscillator for higher output energy per pulse as well as how to scale the output power of the diode-pumped amplifier(s) to multi-kilowatt average power.

Passively mode-locked diode-pumped Tm3+:YLF laser emitting at 1.91 µm using a GaAs-based SESAM

NASA Astrophysics Data System (ADS)

Tyazhev, A.; Soulard, R.; Godin, T.; Paris, M.; Brasse, G.; Doualan, J.-L.; Braud, A.; Moncorgé, R.; Laroche, M.; Camy, P.; Hideur, A.

2018-04-01

We report on a diode-pumped Tm:YLF laser passively mode-locked with an InGaAs saturable absorber. The laser emits a train of 31 ps pulses at a wavelength of 1.91 µm with a repetition rate of 94 MHz and a maximum average power of 95 mW. A sustained and robust mode-locking with a signal-to-noise ratio of ~70 dB is obtained even at high relative air humidity, making this system attractive for applications requiring ultra-short pulses in the spectral window just below 2 µm.

Dual-wavelength mid-infrared CW and Q-switched laser in diode end-pumped Tm,Ho:GdYTaO4 crystal

NASA Astrophysics Data System (ADS)

Wang, Beibei; Gao, Congcong; Dou, Renqin; Nie, Hongkun; Sun, Guihua; Liu, Wenpeng; Yu, Haijuan; Wang, Guoju; Zhang, Qingli; Lin, Xuechun; He, Jingliang; Wang, Wenjun; Zhang, Bingyuan

2018-02-01

Dual-wavelength continuous-wave and Q-switched lasers are demonstrated in a Tm,Ho:GdYTaO4 crystal under 790 nm laser diode end pumping for the first time to the best of our knowledge. The laser operates with a dual wavelength at 1949.677 nm and 2070 nm for continuous-wave with a spacing of about 120 nm. The maximum output power is 0.332 W with a pump power of 3 W. By using graphene as the saturable absorber, a passively Q-switched operation is performed with a dual-wavelength at 1950.323 nm and 2068.064 nm with a wavelength interval of about 118 nm. The maximum average output power of the Q-switched laser goes up to 200 mW with a minimum pulse duration of 1.2 µs and a maximum repetition rate of 34.72 kHz.

GaSb superluminescent diodes with broadband emission at 2.55 μm

NASA Astrophysics Data System (ADS)

Zia, Nouman; Viheriälä, Jukka; Koivusalo, Eero; Virtanen, Heikki; Aho, Antti; Suomalainen, Soile; Guina, Mircea

2018-01-01

We report the development of superluminescent diodes (SLDs) emitting mW-level output power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure consists of two compressively strained GaInAsSb/GaSb-quantum wells placed within a lattice-matched AlGaAsSb waveguide. An average output power of more than 3 mW and a peak power of 38 mW are demonstrated at room temperature under pulsed operation. A cavity suppression element is used to prevent lasing at high current injection allowing emission in a broad spectrum with a full width at half maximum (FWHM) of 124 nm. The measured far-field of the SLD confirms a good beam quality at different currents. These devices open further development possibilities in the field of spectroscopy, enabling, for example, detection of complex molecules and mixtures of gases that manifest a complex absorption spectrum over a broad spectral range.

High-power diode laser in the circumvestibular incision for Le Fort I osteotomy in orthognathic surgery: a prospective case series study.

PubMed

Jaeger, Filipe; Chiavaioli, Gustavo Marques; de Toledo, Guilherme Lacerda; Freire-Maia, Belini; Amaral, Marcio Bruno Figueiredo; Mesquita, Ricardo Alves

2018-01-01

The incisions during orthognathic surgery are classically performed with conventional scalpel or electrocautery. Considering that the high-power diode laser surgery may provide advantages when compared to conventional incision techniques, the current study aimed to present a prospective case series of patients submitted to circumvestibular incision for Le Fort I osteotomy. Ten patients with dentofacial deformities who underwent to rapid assisted maxillary expansion or bimaxillary orthognathic surgery were enrolled in the study. All incisions were performed by a single surgeon using an 808-nm diode laser, with an optical fiber of 600 μm, at a power of 2.5 W, in a continuous-wave mode. The performance of the incision was evaluated by incision velocity, bleeding, edema, secondary infection, clinical healing, and pain. The velocity of the incision ranged from 0.10 to 0.20 mm/s (mean 0.13 ± 0.03 mm/s). Considering bleeding during the soft tissue incision, all surgeries were classified as absent bleeding. All patients presented a clinical healing of the surgical wound in a period that range from 3 to 5 weeks and experienced swelling during the follow-up period. On average, approximately 50% of the swelling had resolved after the third postoperative week, and 28.8% of swelling remained after 2 months after the surgery. The pain decreased after 2 and 3 days, and 90.0% of the patients reported no pain after 7 postoperative days. High-power diode laser is effective and safety during circumvestibular incisions for Le Fort I osteotomy in orthognathic surgery decreasing bleeding, surgery time, pain, and edema after orthognathic surgery.

High Average Power Laser Gain Medium With Low Optical Distortion Using A Transverse Flowing Liquid Host

DOEpatents

Comaskey, Brian J.; Ault, Earl R.; Kuklo, Thomas C.

2005-07-05

A high average power, low optical distortion laser gain media is based on a flowing liquid media. A diode laser pumping device with tailored irradiance excites the laser active atom, ion or molecule within the liquid media. A laser active component of the liquid media exhibits energy storage times longer than or comparable to the thermal optical response time of the liquid. A circulation system that provides a closed loop for mixing and circulating the lasing liquid into and out of the optical cavity includes a pump, a diffuser, and a heat exchanger. A liquid flow gain cell includes flow straighteners and flow channel compression.

Generation of 1-J bursts with picosecond pulses from Perla B thin-disk laser system

NASA Astrophysics Data System (ADS)

Chyla, Michal; Nagisetty, Siva S.; Severova, Patricie; Zhou, Huang; Smrz, Martin; Endo, Akira; Mocek, Tomas

2018-02-01

In many fields of modern physics and industrial applications high-average power pulsed diode-pumped solid-state lasers are essential. Scaling of these lasers towards higher pulse energies is often limited by the onset of thermal effects which are determined by the average power. In this paper we would like to propose a way of increasing the pulse energies by operating the PERLA B laser system in 100 Hz burst mode with 1 ms burst duration and intra-burst repetition rate of 10 kHz. The CPA-based system incorporates fiber front-end, regenerative amplifier and the multipass amplifier followed by the booster amplifier and <2ps compressor.

Status of HiLASE project: High average power pulsed DPSSL systems for research and industry

NASA Astrophysics Data System (ADS)

Mocek, T.; Divoky, M.; Smrz, M.; Sawicka, M.; Chyla, M.; Sikocinski, P.; Vohnikova, H.; Severova, P.; Lucianetti, A.; Novak, J.; Rus, B.

2013-11-01

We introduce the Czech national R&D project HiLASE which focuses on strategic development of advanced high-repetition rate, diode pumped solid state laser (DPSSL) systems that may find use in research, high-tech industry and in the future European large-scale facilities such as HiPER and ELI. Within HiLASE we explore two major concepts: thin-disk and cryogenically cooled multislab amplifiers capable of delivering average output powers above 1 kW level in picosecond-to-nanosecond pulsed regime. In particular, we have started a programme of technology development to demonstrate the scalability of multislab concept up to the kJ level at repetition rate of 1-10 Hz.

Harmonic Power Generation of IMPATT Diodes.

DTIC Science & Technology

1985-09-01

Performance of Si and GaAs Diodes Taking into Account the Thermal Effect (f = 23 GHz). 136 2.8 CW Results for Second-Harmonic Performance of the Si Uniform...Diode Obtained by Matching l-. Resistance (f = 23 GHz). 138 2.9 CW Results for Second-Harmonic Performance of the Si Uniform Diode Taking into Account ...at V = 28 V, V = 8 V, and Jdc = kA/cm 3. 1 3 181 2.21 Power Output for pin Diode . Taking into Account Circuit Matching Only. 194 2.22 CW Power

Compact and efficient 2μm Tm:YAP lasers with mechanical or passive Q-switching

NASA Astrophysics Data System (ADS)

Cole, Brian; Goldberg, Lew

2017-02-01

We describe compact and efficient Q-switched diode-pumped, Tm:YAP lasers operating at 1.94μm. Laser CW and Q-switched performance is compared, using both compact mechanical as well as passive Q-switching. For passive Q-switching using a Cr:ZnS saturable absorber (unsaturated transmission of 95%), the laser produced 0.5mJ pulses with an average power of 4.4W and 6.5kW peak power, and had an optical efficiency of 30%. A resonant mirror mechanical Q-switch resulted in a 4 kHz PRF pulse train, with an optical slope efficiency of 52% and an optical-to-optical conversion efficiency of 41%. The laser generated 1.5 mJ, 45 ns FWHM, 33kW peak power pulses, and 6.2W of average output. A second mechanically Q-switched laser operating at 10 kHz PRF produced 1mJ, 35kW peak power pulses, generating 11W average power with an optical efficiency of 46%, and a beam quality of 1.4x diffraction limit.

Maximum time-dependent space-charge limited diode currents

DOE Office of Scientific and Technical Information (OSTI.GOV)

Griswold, M. E.; Fisch, N. J.

Recent papers claim that a one dimensional (1D) diode with a time-varying voltage drop can transmit current densities that exceed the Child-Langmuir (CL) limit on average, apparently contradicting a previous conjecture that there is a hard limit on the average current density across any 1D diode, as t → ∞, that is equal to the CL limit. However, these claims rest on a different definition of the CL limit, namely, a comparison between the time-averaged diode current and the adiabatic average of the expression for the stationary CL limit. If the current were considered as a function of the maximummore » applied voltage, rather than the average applied voltage, then the original conjecture would not have been refuted.« less

Bypass diode integration

NASA Technical Reports Server (NTRS)

Shepard, N. F., Jr.

1981-01-01

Protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range were investigated. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.

Checker Takes the Guesswork out of Diode Identification

ERIC Educational Resources Information Center

Harman, Charles

2011-01-01

At technical colleges and secondary-level tech schools, students enrolled in basic electronics labs who have learned about diodes that do rectification are used to seeing power diodes like the 1N4001. When the students are introduced to low-power zener diodes and signal diodes, component identification gets more complex. If the small zeners are…

Remote detection of methane with a 1.66-microm diode laser.

PubMed

Uehara, K; Tai, H

1992-02-20

High-sensitivity real-time remote detection of methane in air with a 1.66-microm distributed-feedback diode laser operating at room temperature is demonstrated by laboratory simulations. The laser current was modulated at a high frequency of ~5 MHz, and the laser-center frequency was locked onto a methane-absorption line. The laser light directed toward the probed region was received after one-way transmission or further reflection from a topographic target. The methane absorption was detected by the second-harmonic component in the optical-power variation. The minimum-detectable concentration-path-length product in the transmission scheme was 0.3 part in 10(6) m for a signal averaging time of 1.3 s. In the reflection scheme, the amount of methane could be measured from the ratio of the fundamental and second-harmonic signal intensities independently of the received power.

THz impulse radar for biomedical sensing: nonlinear system behavior

NASA Astrophysics Data System (ADS)

Brown, E. R.; Sung, Shijun; Grundfest, W. S.; Taylor, Z. D.

2014-03-01

The THz impulse radar is an "RF-inspired" sensor system that has performed remarkably well since its initial development nearly six years ago. It was developed for ex vivo skin-burn imaging, and has since shown great promise in the sensitive detection of hydration levels in soft tissues of several types, such as in vivo corneal and burn samples. An intriguing aspect of the impulse radar is its hybrid architecture which combines the high-peak-power of photoconductive switches with the high-responsivity and -bandwidth (RF and video) of Schottky-diode rectifiers. The result is a very sensitive sensor system in which the post-detection signal-to-noise ratio depends super-linearly on average signal power up to a point where the diode is "turned on" in the forward direction, and then behaves quasi-linearly beyond that point. This paper reports the first nonlinear systems analysis done on the impulse radar using MATLAB.

Low cost electronic ultracapacitor interface technique to provide load leveling of a battery for pulsed load or motor traction drive applications

DOEpatents

King, Robert Dean; DeDoncker, Rik Wivina Anna Adelson

1998-01-01

A battery load leveling arrangement for an electrically powered system in which battery loading is subject to intermittent high current loading utilizes a passive energy storage device and a diode connected in series with the storage device to conduct current from the storage device to the load when current demand forces a drop in battery voltage. A current limiting circuit is connected in parallel with the diode for recharging the passive energy storage device. The current limiting circuit functions to limit the average magnitude of recharge current supplied to the storage device. Various forms of current limiting circuits are disclosed, including a PTC resistor coupled in parallel with a fixed resistor. The current limit circuit may also include an SCR for switching regenerative braking current to the device when the system is connected to power an electric motor.

Recent developments in high average power driver technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prestwich, K.R.; Buttram, M.T.; Rohwein, G.J>

1979-01-01

Inertial confinement fusion (ICF) reactors will require driver systems operating with tens to hundreds of megawatts of average power. The pulse power technology that will be required to build such drivers is in a primitive state of development. Recent developments in repetitive pulse power are discussed. A high-voltage transformer has been developed and operated at 3 MV in a single pulse experiment and is being tested at 1.5 MV, 5 kj and 10 pps. A low-loss, 1 MV, 10 kj, 10 pps Marx generator is being tested. Test results from gas-dynamic spark gaps that operate both in the 100 kVmore » and 700 kV range are reported. A 250 kV, 1.5 kA/cm/sup 2/, 30 ns electron beam diode has operated stably for 1.6 x 10/sup 5/ pulses.« less

High average power laser using a transverse flowing liquid host

DOEpatents

Ault, Earl R.; Comaskey, Brian J.; Kuklo, Thomas C.

2003-07-29

A laser includes an optical cavity. A diode laser pumping device is located within the optical cavity. An aprotic lasing liquid containing neodymium rare earth ions fills the optical cavity. A circulation system that provides a closed loop for circulating the aprotic lasing liquid into and out of the optical cavity includes a pump and a heat exchanger.

Development of the Los Alamos continuous high average-power microsecond pulser ion accelerator

NASA Astrophysics Data System (ADS)

Bitteker, L. J.; Wood, B. P.; Davis, H. A.; Waganaar, W. J.; Boyd, I. D.; Lovberg, R. H.

2000-10-01

The continuous high average-power microsecond pulser (CHAMP) ion accelerator is being constructed at Los Alamos National Laboratory. Progress on the testing of the CHAMP diode is discussed. A direct simulation Monte Carlo computer code is used to investigate the puffed gas fill of the CHAMP anode. High plenum pressures and low plenum volumes are found to be desirable for effective gas puffs. The typical gas fill time is 150-180 μs from initiation of valve operation to end of fill. Results of anode plasma production at three stages of development are discussed. Plasma properties are monitored with electric and magnetic field probes. From this data, the near coil plasma density under nominal conditions is found to be on the order of 1×1016 cm-3. Large error is associated with this calculation due to inconsistencies between tests and the limitations of the instrumentation used. The diode insulating magnetic field is observed to result in lower density plasma with a more diffuse structure than for the cases when the insulating field is not applied. The importance of these differences in plasma quality on the beam production is yet to be determined.

Effect of 655 nm laser different powers on dog sperm motility parameters

NASA Astrophysics Data System (ADS)

Corral-Baqués, M. I.; Rigau, T.; Rivera, M. M.; Rodríguez-Gil, J. E.; Rigau, J.

2006-04-01

Introduction: One of the most appreciated features of the sperm is its motility, which depends on a big energy consumption despite differences among species. Laser acts direct or indirectly on mitochondria increasing ATP production. Material and method: By means of a Computer Aided Sperm Analysis (CASA) we have studied the effects of a 655 nm continuous wave diode laser irradiation at different power outputs with a dose of 3.3418 J on sperm motility. After an eosine-nigrosine stain to establish its quality, the second fraction of fresh beagle dog sperm was divided into 5 groups, 1 control and four to be irradiated respectively with an average output power of 6.84 mW, 15.43 mW, 33.05 mW and 49.66 mW. At times 0 and 45 minutes from irradiation pictures were taken and analysed with the Sperm class Analyzer SCA2002 programme. The motility parameters of 4987 spermatozoa studied were: curvilinear velocity (VCL), progressive velocity (VSL), straightness (STR), wobble (WOB), average path velocity (VAP), linearity (LIN), mean amplitude of lateral head displacement (ALHmed), beat cross frequency (BCF) and the total motility (MT). At time 15 minutes after irradiation a hypoosmotic swelling test (HOST) was done. Results: Several motility parameters that affect the overall motile sperm subpopulation structure have been changed by different output powers of a 655 nm diode laser irradiation, and prevents the decrease of the sperm motility properties along time.

High-power laser diodes at various wavelengths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emanuel, M.A.

High power laser diodes at various wavelengths are described. First, performance and reliability of an optimized large transverse mode diode structure at 808 and 941 nm are presented. Next, data are presented on a 9.5 kW peak power array at 900 nm having a narrow emission bandwidth suitable for pumping Yb:S-FAP laser materials. Finally, results on a fiber-coupled laser diode array at {approx}730 nm are presented.

Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

PubMed

Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

2014-10-01

The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

Low-frequency wide-field fluorescence lifetime imaging using a high-power near-infrared light-emitting diode light source

PubMed Central

Gioux, Sylvain; Lomnes, Stephen J.; Choi, Hak Soo; Frangioni, John V.

2010-01-01

Fluorescence lifetime imaging (FLi) could potentially improve exogenous near-infrared (NIR) fluorescence imaging, because it offers the capability of discriminating a signal of interest from background, provides real-time monitoring of a chemical environment, and permits the use of several different fluorescent dyes having the same emission wavelength. We present a high-power, LED-based, NIR light source for the clinical translation of wide-field (larger than 5 cm in diameter) FLi at frequencies up to 35 MHz. Lifetime imaging of indocyanine green (ICG), IRDye 800-CW, and 3,3′-diethylthiatricarbocyanine iodide (DTTCI) was performed over a large field of view (10 cm by 7.5 cm) using the LED light source. For comparison, a laser diode light source was employed as a gold standard. Experiments were performed both on the bench by diluting the fluorescent dyes in various chemical environments in Eppendorf tubes, and in vivo by injecting the fluorescent dyes mixed in Matrigel subcutaneously into CD-1 mice. Last, measured fluorescence lifetimes obtained using the LED and the laser diode sources were compared with those obtained using a state-of-the-art time-domain imaging system and with those previously described in the literature. On average, lifetime values obtained using the LED and the laser diode light sources were consistent, exhibiting a mean difference of 3% from the expected values and a coefficient of variation of 12%. Taken together, our study offers an alternative to laser diodes for clinical translation of FLi and explores the use of relatively low frequency modulation for in vivo imaging. PMID:20459250

Optimization of passively mode-locked Nd:GdVO4 laser with the selectable pulse duration 15-70 ps

NASA Astrophysics Data System (ADS)

Frank, Milan; Jelínek, Michal; Vyhlídal, David; Kubeček, Václav

2016-12-01

In this paper the optimization of a continuously diode-pumped Nd:GdVO4 laser oscillator in bounce geometry passively mode-locked using semiconductor saturable absorber mirror is presented. In the previous results the Nd:GdVO4 laser system generating 30 ps pulses with the average output power of 6.9 W at the repetition rate of 200 MHz at the wavelength of 1063 nm was reported. Now we are demonstrating up to three times increase of peak power due to the optimization of mode-matching in the laser resonator. Depending on the oscillator configuration we obtained the stable continuously mode-locked operation with pulses having selectable duration from 15 ps to 70 ps with the average output power of 7 W and the repetition rate of 150 MHz.

Coherent and noncoherent low-power diodes in clinical practice

NASA Astrophysics Data System (ADS)

Antipa, Ciprian; Pascu, Mihail-Lucian; Stanciulescu, Viorica; Vlaiculescu, Mihaela; Ionescu, Elena; Bordea, Daniel

1997-05-01

Clinical efficacy of the low power laser (LPL) in medical treatments is still not well established. In a double blind, placebo controlled study, we tried to find out first which type of LPL is more efficient, and second if coherence is an important character for clinical efficacy. We treated 1228 patients having different rheumatic diseases, with low power diode, used as follows: A group: IR coherent diode, continuous emission, 3 mW power; B group: IR coherent diode, pulsed emission, output power about 3 mW; C group: IR noncoherent diode continuous emission 9 mW power; D group: both IR diode lasers (continuous or pulsed) and HeNe laser, continuous emission, 2 mW power; E group: placebo laser as control group. The energy dose used for every group was the same, as well as the clinical protocols. The positive results were: 66.16% for A group; 64.06% for B group; 48.87% for C group; 76.66% for D group, and 39.07% for E group. Finally, we showed that LPL is really efficient in the treatment of some rheumatic diseases, especially when red and IR diode laser were used in combination. The type of emission (continuous or pulsed) is not important, but coherence is obviously necessary for clinical efficacy.

Qualification and Selection of Flight Diode Lasers for Space Applications

NASA Technical Reports Server (NTRS)

Liebe, Carl C.; Dillon, Robert P.; Gontijo, Ivair; Forouhar, Siamak; Shapiro, Andrew A.; Cooper, Mark S.; Meras, Patrick L.

2010-01-01

The reliability and lifetime of laser diodes is critical to space missions. The Nuclear Spectroscopic Telescope Array (NuSTAR) mission includes a metrology system that is based upon laser diodes. An operational test facility has been developed to qualify and select, by mission standards, laser diodes that will survive the intended space environment and mission lifetime. The facility is situated in an electrostatic discharge (ESD) certified clean-room and consist of an enclosed temperature-controlled stage that can accommodate up to 20 laser diodes. The facility is designed to characterize a single laser diode, in addition to conducting laser lifetime testing on up to 20 laser diodes simultaneously. A standard laser current driver is used to drive a single laser diode. Laser diode current, voltage, power, and wavelength are measured for each laser diode, and a method of selecting the most adequate laser diodes for space deployment is implemented. The method consists of creating histograms of laser threshold currents, powers at a designated current, and wavelengths at designated power. From these histograms, the laser diodes that illustrate a performance that is outside the normal are rejected and the remaining lasers are considered spaceborne candidates. To perform laser lifetime testing, the facility is equipped with 20 custom laser drivers that were designed and built by California Institute of Technology specifically to drive NuSTAR metrology lasers. The laser drivers can be operated in constant-current mode or alternating-current mode. Situated inside the enclosure, in front of the laser diodes, are 20 power-meter heads to record laser power throughout the duration of lifetime testing. Prior to connecting a laser diode to the current source for characterization and lifetime testing, a background program is initiated to collect current, voltage, and resistance. This backstage data collection enables the operational test facility to have full laser diode traceablity.

Wavelength stabilized multi-kW diode laser systems

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

2015-03-01

We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

10 kHz ps 1342 nm laser generation by an electro-optically cavity-dumped mode-locked Nd:YVO4 laser

NASA Astrophysics Data System (ADS)

Chen, Ying; Liu, Ke; He, Li-jiao; Yang, Jing; Zong, Nan; Yang, Feng; Gao, Hong-wei; Liu, Zhao; Yuan, Lei; Lan, Ying-jie; Bo, Yong; Peng, Qin-jun; Cui, Da-fu; Xu, Zu-yan

2017-01-01

We have demonstrated an electro-optically cavity-dumped mode-locked (CDML) picosecond Nd:YVO4 laser at 1342 nm with 880 nm diode-laser direct pumping. At a repetition rate of 10 kHz, an average output power of 0.119 W was achieved, corresponding to a pulse energy of 11.9 μJ. Compared with the continuous wave mode-locking pulse energy of 17.5 nJ, the CDML pulse energy was 680 times higher. The pulse width was measured to be 33.4 ps, resulting in the peak power of 356 kW. Meanwhile, the beam quality was nearly diffraction limited with an average beam quality factor M2 of 1.29.

Diode-pumped Kerr-lens mode-locked Yb:CaGdAlO4 laser with tunable wavelength

NASA Astrophysics Data System (ADS)

Gao, Ziye; Zhu, Jiangfeng; Wang, Junli; Wang, Zhaohua; Wei, Zhiyi; Xu, Xiaodong; Zheng, Lihe; Su, Liangbi; Xu, Jun

2016-01-01

We experimentally demonstrated a wavelength tunable Kerr-lens mode-locked femtosecond laser based on an Yb:CaGdAlO4 (Yb:CGA) crystal. The Kerr-lens mode-locked wavelength tuning range was from 1043.5 to 1076 nm, as broad as 32.5 nm, by slightly tilting the end mirror. Pulses as short as 60 fs were generated at the central wavelength of 1043.8 nm with an average output power of 66 mW. By using an output coupler with 1.5% transmittance, the Kerr-lens mode-locked average output power reached 127 mW with a pulse duration of 81 fs at a central wavelength of 1049.5 nm.

A Co2+-doped alumina-rich Mg0.4Al2.4O4 spinel crystal as saturable absorber for a LD pumped Er: glass microchip laser at 1535 nm

NASA Astrophysics Data System (ADS)

Jiang, D. P.; Zou, Y. Q.; Su, L. B.; Tang, H. L.; Wu, F.; Zheng, L. H.; Li, H. J.; Xu, J.

2011-05-01

Co2+-doped Mg0.4Al2.4O4 single crystal up to varnothing28×40 mm3 was successfully grown by the Czochralski method. By using this crystal as saturable absorber, we have demonstrated a diode-end-pumped passively Q-switched Er:glass microchip laser operating at 1535 nm for the first time to the best of our knowledge. The dependences of average output power, repetition rate and pulse energy on the incident pump power were investigated. In the passive Q-switching regime, a maximum average output power of 22.12 mW was obtained at the incident pump power of 410 mW. The narrowest pulse width, the largest pulse energy and the highest peak power were obtained to be about 3.5 ns, 4.8 μJ, and 1.37 kW, respectively.

High power multiple wavelength diode laser stack for DPSSL application without temperature control

NASA Astrophysics Data System (ADS)

Hou, Dong; Yin, Xia; Wang, Jingwei; Chen, Shi; Zhan, Yun; Li, Xiaoning; Fan, Yingmin; Liu, Xingsheng

2018-02-01

High power diode laser stack is widely used in pumping solid-state laser for years. Normally an integrated temperature control module is required for stabilizing the output power of solid-state laser, as the output power of the solid-state laser highly depends on the emission wavelength and the wavelength shift of diode lasers according to the temperature changes. However the temperature control module is inconvenient for this application, due to its large dimension, high electric power consumption and extra adding a complicated controlling system. Furthermore, it takes dozens of seconds to stabilize the output power when the laser system is turned on. In this work, a compact hard soldered high power conduction cooled diode laser stack with multiple wavelengths is developed for stabilizing the output power of solid-state laser in a certain temperature range. The stack consists of 5 laser bars with the pitch of 0.43mm. The peak output power of each bar in the diode laser stack reaches as much as 557W and the combined lasing wavelength spectrum profile spans 15nm. The solidstate laser, structured with multiple wavelength diode laser stacks, allows the ambient temperature change of 65°C without suddenly degrading the optical performance.

Qualification of Laser Diode Arrays for Mercury Laser Altimeter

NASA Technical Reports Server (NTRS)

Stephen, Mark; Vasilyev, Aleksey; Schafer, John; Allan, Graham R.

2004-01-01

NASA's requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance of Quasi-CW, High-power, laser diode arrays under extended use is presented. We report the optical power over several hundred million pulse operation and the effect of power cycling and temperature cycling of the laser diode arrays. Data on the initial characterization of the devices is also presented.

Performance improvement of high repetition rate electro-optical cavity-dumped Nd:GdVO4 laser

NASA Astrophysics Data System (ADS)

Yu, X.; Wang, C.; Ma, Y. F.; Chen, F.; Yan, R. P.; Li, X. D.

2012-02-01

We improved the electro-optical cavity-dumped Nd:GdVO4 laser performance at high repetition rates by employing continuous-grown GdVO4/Nd:GdVO4 composite crystal under 879 nm diode-laser pumping. A constant 3.8 ns duration pulsed laser was obtained and the repetition rate could reach up to 100 kHz with a maximum average output power of 13.1 W and a slope efficiency of 56.4%, corresponding to a peak power of 34.4 kW.

Actively mode-locked Tm-Ho:LiYF4 and Tm-Ho:BaY2F8 lasers

NASA Astrophysics Data System (ADS)

Gatti, D.; Galzerano, G.; Toncelli, A.; Tonelli, M.; Laporta, P.

2007-01-01

We report on the generation of mode-locking pulse trains with high average output powers from diode-pumped Tm-Ho:LiYF4 and Tm-Ho:BaY2F8 lasers emitting at around 2 μm. The highest output power of 365 mW was obtained with the Tm-Ho:YLF4 laser, whereas the shortest pulse duration of 120 ps and the widest tunability range of 59 nm was achieved with the Tm-Ho:BaY2F8 laser.

High peak and high average radiofrequency power transmit/receive switch for thermal magnetic resonance.

PubMed

Ji, Yiyi; Hoffmann, Werner; Pham, Michal; Dunn, Alexander E; Han, Haopeng; Özerdem, Celal; Waiczies, Helmar; Rohloff, Michael; Endemann, Beate; Boyer, Cyrille; Lim, May; Niendorf, Thoralf; Winter, Lukas

2018-04-01

To study the role of temperature in biological systems, diagnostic contrasts and thermal therapies, RF pulses for MR spin excitation can be deliberately used to apply a thermal stimulus. This application requires dedicated transmit/receive (Tx/Rx) switches that support high peak powers for MRI and high average powers for RF heating. To meet this goal, we propose a high-performance Tx/Rx switch based on positive-intrinsic-negative diodes and quarter-wavelength (λ/4) stubs. The λ/4 stubs in the proposed Tx/Rx switch design route the transmitted RF signal directly to the RF coil/antenna without passing through any electronic components (e.g., positive-intrinsic-negative diodes). Bench measurements, MRI, MR thermometry, and RF heating experiments were performed at f = 297 MHz (B 0  = 7 T) to examine the characteristics and applicability of the switch. The proposed design provided an isolation of -35.7dB/-41.5dB during transmission/reception. The insertion loss was -0.41dB/-0.27dB during transmission/reception. The switch supports high peak (3.9 kW) and high average (120 W) RF powers for MRI and RF heating at f = 297 MHz. High-resolution MRI of the wrist yielded image quality competitive with that obtained with a conventional Tx/Rx switch. Radiofrequency heating in phantom monitored by MR thermometry demonstrated the switch applicability for thermal modulation. Upon these findings, thermally activated release of a model drug attached to thermoresponsive polymers was demonstrated. The high-power Tx/Rx switch enables thermal MR applications at 7 T, contributing to the study of the role of temperature in biological systems and diseases. All design files of the switch will be made available open source at www.opensourceimaging.org. © 2018 International Society for Magnetic Resonance in Medicine.

Fully utilizing high power diode lasers by synergizing diode laser light sources and beam shaping micro-optics

NASA Astrophysics Data System (ADS)

Fan, Yingmin; Wang, Jingwei; Cai, Lei; Mitra, Thomas; Hauschild, Dirk; Zah, Chung-En; Liu, Xingsheng

2018-02-01

High power diode lasers (HPDLs) offer the highest wall-plug efficiency, highest specific power (power-to-weight ratio), arguably the lowest cost and highest reliability among all laser types. However, the poor beam quality of commercially HPDLs is the main bottleneck limiting their direct applications requiring high brightness at least in one dimension. In order to expand the applications of HPDLs, beam shaping and optical design are essential. In this work, we report the recent progresses on maximizing applications of HPDLs by synergizing diode laser light source and beam shaping micro-optics. Successful examples of matching of diode laser light sources and beam shaping micro-optics driving new applications are presented.

Investigation of temperature feedback signal parameters during neoplasms treatment by diode laser radiation

NASA Astrophysics Data System (ADS)

Belikov, Andrey V.; Gelfond, Mark L.; Shatilova, Ksenia V.; Semyashkina, Yulia V.

2016-04-01

Dynamics of temperature signal in operation area and laser power at nevus, papilloma, and keratoma in vivo removal by a 980+/-10 nm diode laser with "blackened" tip operating in continuous (CW) mode and with temperature feedback (APC) mode are presented. Feedback allows maintaining temperature in the area of laser treatment at a preset level by regulating power of diode laser radiation (automatic power control). Temperature in the area of laser treatment was controlled by measuring the amplitude of thermal radiation, which occurs when tissue is heated by laser radiation. Removal of neoplasm was carried out in CW mode with laser radiation average power of 12.5+/-0.5 W; mean temperature in the area of laser treatment was 900+/-10°C for nevus, 800+/-15°C for papilloma, and 850+/-20°C for keratoma. The same laser radiation maximal power (12.5 W) and targeted temperature (900°C) were set for nevus removal in APC mode. The results of investigation are real time oscillograms of the laser power and temperature in the area of laser treatment at neoplasms removal in two described above modes. Simultaneously with the measurement of laser power and the temperature in the area of laser treatment video recording of surgeon manipulations was carried out. We discuss the correlation between the power of the laser radiation, the temperature in the area of laser treatment and consistency of surgeon manipulation. It is shown that the method of removal (excision with or without traction, scanning) influences the temperature in the area of laser treatment. It was found, that at removal of nevus with temperature feedback (APC) mode to achieve comparable with CW mode temperature in the area of laser treatment (900+/-10°C) 20-50% less laser power is required. Consequently, removing these neoplasms in temperature feedback mode can be less traumatic than the removal in CW mode.

Comparative study of Nd:KGW lasers pumped at 808 nm and 877 nm

NASA Astrophysics Data System (ADS)

Huang, Ke; Ge, Wen-Qi; Zhao, Tian-Zhuo; He, Jian-Guo; Feng, Chen-Yong; Fan, Zhong-Wei

2015-10-01

The laser performance and thermal analysis of Nd:KGW laser continuously pumped by 808 nm and 877 nm are comparatively investigated. Output power of 670 mW and 1587 mW, with nearly TEM00 mode, are achieved respectively at 808 nm pump and 877 nm pump. Meanwhile, a high-power passively Q-switched Nd:KGW/Cr4+:YAG laser pumped at 877 nm is demonstrated. An average output power of 1495 mW is obtained at pump power of 5.22 W while the laser is operating at repetition of 53.17 kHz. We demonstrate that 877 nm diode laser is a more potential pump source for Nd:KGW lasers.

Diode-pumped solid-state laser driver experiments for inertial fusion energy applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marshall, C.D.; Payne, S.A.; Emanuel, M.E.

Although solid-state lasers have been the primary means by which the physics of inertial confinement fusion (ICF) have been investigated, it was previously thought that solid-state laser technology could not offer adequate efficiencies for an inertial fusion energy (IFE) power plant. Orth and co-workers have recently designed a conceptual IFE power plant, however, with a high efficiency diode-pumped solid-state laser (DPSSL) driver that utilized several recent innovations in laser technology. It was concluded that DPSSLs could offer adequate performance for IFE with reasonable assumptions. This system was based on a novel diode pumped Yb-doped Sr{sub 5}(PO{sub 4}){sub 3}F (Yb:S-FAP) amplifier.more » Because this is a relatively new gain medium, a project was established to experimentally validate the diode-pumping and extraction dynamics of this system at the smallest reasonable scale. This paper reports on the initial experimental results of this study. We found the pumping dynamics and extraction cross-sections of Yb:S-FAP crystals to be similar to those previously inferred by purely spectroscopic techniques. The saturation fluence for pumping was measured to be 2.2 J/cm{sup 2} using three different methods based on either the spatial, temporal, or energy transmission properties of a Yb:S-FAP rod. The small signal gain implies an emission cross section of 6.0{times}10{sup {minus}20} cm{sup 2}. Up to 1.7 J/cm{sup 3} of stored energy density was achieved in a 6{times}6{times}44 mm{sup 3} Yb:S-FAP amplifier rod. In a free running configuration diode-pumped slope efficiencies up to 43% were observed with output energies up to {approximately}0.5 J per 1 ms pulse from a 3{times}3{times}30 mm{sup 3} rod. When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz with 500 {mu}s pulses.« less

External and intralesional photocoagulation of hemangioma in children with infrared diode laser

NASA Astrophysics Data System (ADS)

Abushkin, Ivan A.; Privalov, Valery A.; Lappa, Alexander V.; Besshtanko, Evgeny L.

2005-08-01

Infra-red diode laser with wavelength 1060 nm was used for combined treatment of 163 children aged from 21 days to 13 years with 221 hemangiomas. For interstitial coagulation a power of 1.8-2 W and a power density of 5-90 J/cm3 were used in continuous mode. For distant coagulation pulse mode was applied with pulse/pause duration 30-50/200-250 ms, average power 1.3-2 W, and power density 65-450 J/cm2. 197 (89.1 %) hemangiomas were capillary, 7 (3.2 %) cavernous, and 17 (7.7 %) combined (combination of capillary and cavernous hemangiomas). The area of hemangiomas ranged from 6 mm2 to 48 cm2. For the majority (193, 87.3 %) of hemangiomas one session of photocoagulation was enough to achieve a good cosmetic effect. However, 28 (12.7 %) hemangiomas were treated repeatedly, 11 (5%) of them needed 4-7 sessions. In 8 children with cavernous and combined hemangiomas both distant and interstitial laser coagulation were used. In all, good or excellent results were obtained in 96,3 % of the patients. In 6 (3.7%) patients with extensive combined hematomas the considerable improvement was achieved.

On-Chip Power-Combining for High-Power Schottky Diode-Based Frequency Multipliers

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Mehdi, Imran; Schlecht, Erich T.; Lee, Choonsup; Siles, Jose V.; Maestrini, Alain E.; Thomas, Bertrand; Jung, Cecile D.

2013-01-01

A 1.6-THz power-combined Schottky frequency tripler was designed to handle approximately 30 mW input power. The design of Schottky-based triplers at this frequency range is mainly constrained by the shrinkage of the waveguide dimensions with frequency and the minimum diode mesa sizes, which limits the maximum number of diodes that can be placed on the chip to no more than two. Hence, multiple-chip power-combined schemes become necessary to increase the power-handling capabilities of high-frequency multipliers. The design presented here overcomes difficulties by performing the power-combining directly on-chip. Four E-probes are located at a single input waveguide in order to equally pump four multiplying structures (featuring two diodes each). The produced output power is then recombined at the output using the same concept.

High-efficiency V-band GaAs IMPATT diodes

NASA Technical Reports Server (NTRS)

Ma, Y. E.; Benko, E.; Trinh, T.; Erickson, L. P.; Mattord, T. J.

1984-01-01

Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (1) circular mesa diodes with silver-plated (integrated) heat sinks: (2) pill-type diodes bonded to diamond heat sinks. Both configurations utilized a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3 percent at 55.5 GHz with 1 W output power.

Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars

NASA Astrophysics Data System (ADS)

Hülsewede, R.; Schulze, H.; Sebastian, J.; Schröder, D.; Meusel, J.; Hennig, P.

2007-02-01

There are strong demands at the market to increase power and reliability for 808 nm diode laser bars. Responding to this JENOPTIK Diode Lab GmbH developed high performance 808 nm diode laser bars in the AlGaAs/GaAs material system with special emphasis to high power operation and long term stability. Optimization of the epitaxy structure and improvements in the diode laser bar design results in very high slope efficiency of >1.2 W/A, low threshold current and small beam divergence in slow axis direction. Including low serial resistance the overall wall plug efficiency is up to 65% for our 20%, 30% and 50% filling factor 10 mm diode laser bars. With the JENOPTIK Diode Lab cleaving and coating technique the maximum output power is 205 W in CW operation and 377 W in QCW operation (200 μs, 2% duty cycle) for bars with 50% filling factor. These bars mounted on micro channel cooled package are showing a very high reliability of >15.000 h. Mounted on conductive cooled package high power operation at 100 W is demonstrated for more than 5000h.

High-efficiency, low-temperature cesium diodes with lanthanum-hexaboride electrodes

NASA Technical Reports Server (NTRS)

Morris, J. F.

1974-01-01

Lanthanum hexaboride electrodes in 1700 K cesium diodes may triple power outputs compared with those demonstrated for nuclear thermionic space applications. Still greater relative gains seem possible for emitters below 1700 K. Further improvements in cesium diode performance should result from the lower collector temperatures allowed for earth and low power space duties. Decreased temperatures will lessen thermal transport losses that attend thermionic conversion mechanisms. Such advantages will add to those from collector Carnot and electrode effects. If plasma ignition difficulties impede diode temperature reductions, recycling small fractions of the output power could provide ionization. So high efficiency, low temperature cesium diodes with lanthanum hexaboride electrodes appear feasible.

A spectral measurement method for determining white OLED average junction temperatures

NASA Astrophysics Data System (ADS)

Zhu, Yiting; Narendran, Nadarajah

2016-09-01

The objective of this study was to investigate an indirect method of measuring the average junction temperature of a white organic light-emitting diode (OLED) based on temperature sensitivity differences in the radiant power emitted by individual emitter materials (i.e., "blue," "green," and "red"). The measured spectral power distributions (SPDs) of the white OLED as a function of temperature showed amplitude decrease as a function of temperature in the different spectral bands, red, green, and blue. Analyzed data showed a good linear correlation between the integrated radiance for each spectral band and the OLED panel temperature, measured at a reference point on the back surface of the panel. The integrated radiance ratio of the spectral band green compared to red, (G/R), correlates linearly with panel temperature. Assuming that the panel reference point temperature is proportional to the average junction temperature of the OLED panel, the G/R ratio can be used for estimating the average junction temperature of an OLED panel.

Diode-pumped Yb:Sr{sub 5}(PO{sub 4}){sub 3}F laser performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marshall, C.D.; Payne, S.A.; Smith, L.K.

The performance of the first diode-pumped Yb{sup 3+}-doped Sr{sub 5}(PO{sub 4}){sub 3}F (Yb:S-FAP) laser is discussed. We found the pumping dynamics and extraction cross-sections of Yb:S-FAP crystals to be similar to those previously inferred by purely spectroscopic techniques. The saturation fluence for pumping was measured to be 2.2 J/cm{sup 2} using three different methods based on either the spatial, temporal, or energy transmission properties of a Yb:S-FAP rod. The small signal gain implies an emission cross section of 6.0 x 10{sup -20} cm{sup 2} that falls within error bars of the previously reported value of 7.3 x 10{sup -20} cm{supmore » 2}, obtained from spectroscopic techniques. Up to 1.7 J/cm{sup 3} of stored energy density was achieved in a 6 x 6 x 44 mm Yb:S-FAP amplifier rod. An InGaAs diode array has been fabricated that has suitable specifications for pumping a 3 x 3 x 30 mm Yb:S-FAP rod. In a free running configuration diode-pumped slope efficiencies up to 43% were observed with output energies up to {approximately}0.5 J per 1 ms pulse. When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz and 500 {mu}s pulses.« less

Thermal-structural modeling of polymer Bragg grating waveguides illuminated by a light emitting diode.

PubMed

Joon Kim, Kyoung; Bar-Cohen, Avram; Han, Bongtae

2012-02-20

This study reports both analytical and numerical thermal-structural models of polymer Bragg grating (PBG) waveguides illuminated by a light emitting diode (LED). A polymethyl methacrylate (PMMA) Bragg grating (BG) waveguide is chosen as an analysis vehicle to explore parametric effects of incident optical powers and substrate materials on the thermal-structural behavior of the BG. Analytical models are verified by comparing analytically predicted average excess temperatures, and thermally induced axial strains and stresses with numerical predictions. A parametric study demonstrates that the PMMA substrate induces more adverse effects, such as higher excess temperatures, complex axial temperature profiles, and greater and more complicated thermally induced strains in the BG compared with the Si substrate. © 2012 Optical Society of America

Quantum cascade light emitting diodes based on type-2 quantum wells

NASA Technical Reports Server (NTRS)

Lin, C. H.; Yang, R. Q.; Zhang, D.; Murry, S. J.; Pei, S. S.; Allerman, A. A.; Kurtz, S. R.

1997-01-01

The authors have demonstrated room-temperature CW operation of type-2 quantum cascade (QC) light emitting diodes at 4.2 (micro)m using InAs/InGaSb/InAlSb type-2 quantum wells. The type-2 QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-2 quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (micro)W at 80 K, and 140 (micro)W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

30-W Yb3+-pulsed fiber laser with wavelength tuning

NASA Astrophysics Data System (ADS)

Davydov, B. L.; Krylov, A. A.

2007-12-01

We have investigated various pulsed operation regimes of a diode-pumped Yb3+-doped fiber laser with both an acoustooptic filter and a shutter inside the resonator. To imbed the polarization-sensitive acoustooptic-tunable spectral filter into the polarization-nonmaintaining resonator, based on an “isotropic” single-mode fiber without “polarization’ losses, we have used a CaCO3 single-crystal nondispersive thermostable polarization splitter. Stable smooth bell-shaped laser pulses were obtained in the Q-switch generation regime across the entire wavelength tuning band. Their duration depended on the resonator travel time and their repetition rate was determined exclusively by the outer high-frequency generator controlling the acoustooptic shutter. A pulsed laser radiation tuning bandwidth of more than 20-nm at a repetition rate band of 10-100 kHz was observed in the amplification band of the Yb3+-doped fiber. A stable average power of 30 W of the pulsed 70-ns 100-kHz laser radiation in a near Gaussian beam was reached by means of the two-stage amplifier based on Yb3+-doped fibers with an enlarged mode field diameter (14 μm). The amplifier was pumped by λ = 975 nm CW multimode laser diodes with a maximum average power of 42 W.

Effective of diode laser on teeth enamel in the teeth whitening treatment

NASA Astrophysics Data System (ADS)

Klunboot, U.; Arayathanitkul, K.; Chitaree, R.; Emarat, N.

2011-12-01

This research purpose is to investigate the changing of teeth color and to study the surface of teeth after treatment by laser diode at different power densities for tooth whitening treatment. In the experiment, human-extracted teeth samples were divided into 7 groups of 6 teeth each. After that laser diode was irradiated to teeth, which were coated by 38% concentration of hydrogen peroxide, during for 20, 30 and 60 seconds at power densities of 10.9 and 52.1 W/cm2. The results of teeth color change were described by the CIEL*a*b* systems and the damage of teeth surface were investigated by scanning electron microscopy (SEM). The results showed that the power density of the laser diode could affect the whiteness of teeth. The high power density caused more luminous teeth than the low power density did, but on the other hand the high power density also caused damage to the teeth surface. Therefore, the laser diode at the low power densities has high efficiency for tooth whitening treatment and it has a potential for other clinical applications.

Passive mode-locking of a diode-pumped Nd:YVO(4) laser by intracavity SHG in PPKTP.

PubMed

Iliev, Hristo; Chuchumishev, Danail; Buchvarov, Ivan; Petrov, Valentin

2010-03-15

Experimental results on passive mode-locking of a Nd:YVO(4) laser using intracavity frequency doubling in periodically poled KTP (PPKTP) crystal are reported. Both, negative cascaded chi((2)) lensing and frequency doubling nonlinear mirror (FDNLM) are exploited for the laser mode-locking. The FDNLM based on intensity dependent reflection in the laser cavity ensures self-starting and self-sustaining mode-locking while the cascaded chi((2)) lens process contributes to substantial pulse shortening. This hybrid technique enables generation of stable trains of pulses at high-average output power with several picoseconds pulse width. The pulse repetition rate of the laser is 117 MHz with average output power ranging from 0.5 to 3.1 W and pulse duration from 2.9 to 5.2 ps.

Performance of a thermionic converter module utilizing emitter and collector heat pipes

NASA Technical Reports Server (NTRS)

Kroeger, E. W.; Morris, J. F.; Miskolczy, G.; Lieb, D. P.; Goodale, D. B.

1978-01-01

A thermionic converter module simulating a configuration for an out-of-core thermionic nuclear reactor was designed, fabricated, and tested. The module consists of three cylindrical thermionic converters. The tungsten emitter of the converter is heated by a tungsten, lithium heat pipe. The emitter heat pipes are immersed in a furnace, insulated by MULTI-FOIL thermal insulation, and heated by tungsten radiation filaments. The performance of each thermionic converter was characterized before assembly into the module. Dynamic voltage, current curves were taken using a 60 Hz sweep and computerized data acquisition over a range of emitter, collector, and cesium-reservoir temperatures. An output power of 215 W was observed at an emitter temperature of 1750 K and a collector temperature of 855 K for a two diode module. With a three diode module, an output power of 270 W was observed at an average emitter temperature of 1800 K and a Collector temperature of 875 K.

Characterization of electrical noise limits in ultra-stable laser systems.

PubMed

Zhang, J; Shi, X H; Zeng, X Y; Lü, X L; Deng, K; Lu, Z H

2016-12-01

We demonstrate thermal noise limited and shot noise limited performance of ultra-stable diode laser systems. The measured heterodyne beat linewidth between such two independent diode lasers reaches 0.74 Hz. The frequency instability of one single laser approaches 1.0 × 10 -15 for averaging time between 0.3 s and 10 s, which is close to the thermal noise limit of the reference cavity. Taking advantage of these two ultra-stable laser systems, we systematically investigate the ultimate electrical noise contributions, and derive expressions for the closed-loop spectral density of laser frequency noise. The measured power spectral density of the beat frequency is compared with the theoretically calculated closed-loop spectral density of the laser frequency noise, and they agree very well. It illustrates the power and generality of the derived closed-loop spectral density formula of the laser frequency noise. Our result demonstrates that a 10 -17 level locking in a wide frequency range is feasible with careful design.

Characterization of High-power Quasi-cw Laser Diode Arrays

NASA Technical Reports Server (NTRS)

Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

2005-01-01

NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

Tunable, diode side-pumped Er: YAG laser

DOEpatents

Hamilton, Charles E.; Furu, Laurence H.

1997-01-01

A discrete-element Er:YAG laser, side pumped by a 220 Watt peak-power InGaAs diode array, generates >500 mWatts at 2.94 .mu.m, and is tunable over a 6 nm range near about 2.936 .mu.m. The oscillator is a plano-concave resonator consisting of a concave high reflector, a flat output coupler, a Er:YAG crystal and a YAG intracavity etalon, which serves as the tuning element. The cavity length is variable from 3 cm to 4 cm. The oscillator uses total internal reflection in the Er:YAG crystal to allow efficient coupling of the diode emission into the resonating modes of the oscillator. With the tuning element removed, the oscillator produces up to 1.3 Watts of average power at 2.94 .mu.m. The duty factor of the laser is 6.5% and the repetition rate is variable up to 1 kHz. This laser is useful for tuning to an atmospheric transmission window at 2.935 .mu.m (air wavelength). The laser is also useful as a spectroscopic tool because it can access several infrared water vapor transitions, as well as transitions in organic compounds. Other uses include medical applications (e.g., for tissue ablation and uses with fiber optic laser scalpels) and as part of industrial effluent monitoring systems.

Tunable, diode side-pumped Er:YAG laser

DOEpatents

Hamilton, C.E.; Furu, L.H.

1997-04-22

A discrete-element Er:YAG laser, side pumped by a 220 Watt peak-power InGaAs diode array, generates >500 mWatts at 2.94 {micro}m, and is tunable over a 6 nm range near about 2.936 {micro}m. The oscillator is a plano-concave resonator consisting of a concave high reflector, a flat output coupler, a Er:YAG crystal and a YAG intracavity etalon, which serves as the tuning element. The cavity length is variable from 3 cm to 4 cm. The oscillator uses total internal reflection in the Er:YAG crystal to allow efficient coupling of the diode emission into the resonating modes of the oscillator. With the tuning element removed, the oscillator produces up to 1.3 Watts of average power at 2.94 {micro}m. The duty factor of the laser is 6.5% and the repetition rate is variable up to 1 kHz. This laser is useful for tuning to an atmospheric transmission window at 2.935 {micro}m (air wavelength). The laser is also useful as a spectroscopic tool because it can access several infrared water vapor transitions, as well as transitions in organic compounds. Other uses include medical applications (e.g., for tissue ablation and uses with fiber optic laser scalpels) and as part of industrial effluent monitoring systems. 4 figs.

Improvement in reduced-mode (REM) diodes enable 315 W from 105-μm 0.15-NA fiber-coupled modules

NASA Astrophysics Data System (ADS)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2018-02-01

High-power, high-brightness diode lasers have been pursued for many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - and 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. As a result, there have been many technical thrusts for driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, nLIGHT element®. In the past decade, the power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brightness and the development of techniques for efficiently coupling multiple emitters. In this paper, we demonstrate further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report record 315 W output from a 2×12 nLIGHT element with 105 μm diameter fiber using x-REM diodes and these diodes will allow next generation of fiber-coupled product capable of 250W output power from 105 μm/0.15 NA beam at 915 nm.

3.1 W narrowband blue external cavity diode laser

NASA Astrophysics Data System (ADS)

Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

2018-03-01

We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

Properties and Frequency Conversion of High-Brightness Diode-Laser Systems

NASA Astrophysics Data System (ADS)

Boller, Klaus-Jochen; Beier, Bernard; Wallenstein, Richard

An overview of recent developments in the field of high-power, high-brightness diode-lasers, and the optically nonlinear conversion of their output into other wavelength ranges, is given. We describe the generation of continuous-wave (CW) laser beams at power levels of several hundreds of milliwatts to several watts with near-perfect spatial and spectral properties using Master-Oscillator Power-Amplifier (MOPA) systems. With single- or double-stage systems, using amplifiers of tapered or rectangular geometry, up to 2.85 W high-brightness radiation is generated at wavelengths around 810nm with AlGaAs diodes. Even higher powers, up to 5.2W of single-frequency and high spatial quality beams at 925nm, are obtained with InGaAs diodes. We describe the basic properties of the oscillators and amplifiers used. A strict proof-of-quality for the diode radiation is provided by direct and efficient nonlinear optical conversion of the diode MOPA output into other wavelength ranges. We review recent experiments with the highest power levels obtained so far by direct frequency doubling of diode radiation. In these experiments, 100mW single-frequency ultraviolet light at 403nm was generated, as well as 1W of single-frequency blue radiation at 465nm. Nonlinear conversion of diode radiation into widely tunable infrared radiation has recently yielded record values. We review the efficient generation of widely tunable single-frequency radiation in the infrared with diode-pumped Optical Parametric Oscillators (OPOs). With this system, single-frequency output radiation with powers of more than 0.5W was generated, widely tunable around wavelengths of 2.1,m and 1.65,m and with excellent spectral and spatial quality. These developments are clear indicators of recent advances in the field of high-brightness diode-MOPA systems, and may emphasize their future central importance for applications within a vast range of optical wavelengths.

Compact 2100 nm laser diode module for next-generation DIRCM

NASA Astrophysics Data System (ADS)

Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

2017-10-01

Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

Innovative Facet Passivation for High-Brightness Laser Diodes

DTIC Science & Technology

2016-02-05

and anti-reflection (AR) coatings are deposited after cleaving. Edge- emitting laser diodes emit very high optical powers from small emission areas, as...SECURITY CLASSIFICATION OF: The objective of this effort is to increase the power of low fill-factor (20%) laser diode (LD) bars from the present...2012 16-Nov-2015 Approved for Public Release; Distribution Unlimited Final Report: Innovative Facet Passivation for High-Brightness Laser Diodes The

120W, NA_0.15 fiber coupled LD module with 125-μm clad/NA 0.22 fiber by spatial coupling method

NASA Astrophysics Data System (ADS)

Ishige, Yuta; Kaji, Eisaku; Katayama, Etsuji; Ohki, Yutaka; Gajdátsy, Gábor; Cserteg, András.

2018-02-01

We have fabricated a fiber coupled semiconductor laser diode module by means of spatial beam combining of single emitter broad area semiconductor laser diode chips in the 9xx nm band. In the spatial beam multiplexing method, the numerical aperture of the output light from the optical fiber increases by increasing the number of laser diodes coupled into the fiber. To reduce it, we have tried the approach to improving assembly process technology. As a result, we could fabricate laser diode modules having a light output power of 120W or more and 95% power within NA of 0.15 or less from a single optical fiber with 125-μm cladding diameter. Furthermore, we have obtained that the laser diode module maintaining high coupling efficiency can be realized even around the fill factor of 0.95. This has been achieved by improving the optical alignment method regarding the fast axis stack pitch of the laser diodes in the laser diode module. Therefore, without using techniques such as polarization combining and wavelength combining, high output power was realized while keeping small numerical aperture. This contributes to a reduction in unit price per light output power of the pumping laser diode module.

Preliminary results of Linear Induction Accelerator LIA-200

NASA Astrophysics Data System (ADS)

Sharma, Archana; Senthil, K.; Praveen Kumar, D. D.; Mitra, S.; Sharma, V.; Patel, A.; Sharma, D. K.; Rehim, R.; Kolge, T. S.; Saroj, P. C.; Acharya, S.; Amitava, Roy; Rakhee, M.; Nagesh, K. V.; Chakravarthy, D. P.

2010-05-01

Repetitive Pulsed Power Technology is being developed keeping in mind the potential applications of this technology in material modifications, disinfections of water, timber, and food pasteurization etc. BARC has indigenously developed a Linear Induction Accelerator (LIA-200) rated for 200 kV, 4 kA, 100 ns, 10 Hz. The satisfactory performance of all the sub-systems including solid state power modulator, amorphous core based pulsed transformers, magnetic switches, water capacitors, water pulse- forming line, induction adder and field-emission diode have been demonstrated. This paper presents some design details and operational results of this pulsed power system. It also highlights the need for further research and development to build reliable and economic high-average power systems for industrial applications.

The Beam Characteristics of High Power Diode Laser Stack

NASA Astrophysics Data System (ADS)

Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

2018-03-01

Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

Advancements of ultra-high peak power laser diode arrays

NASA Astrophysics Data System (ADS)

Crawford, D.; Thiagarajan, P.; Goings, J.; Caliva, B.; Smith, S.; Walker, R.

2018-02-01

Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.

Injection locking of a high power ultraviolet laser diode for laser cooling of ytterbium atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosoya, Toshiyuki; Miranda, Martin; Inoue, Ryotaro

2015-07-15

We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power of 40 mW and another laser diode for amplifying the laser power up to 220 mW by injection locking. The systematic method for optimization of our injection locking can also be applied to high power light sources at any other wavelengths. Our system does not depend on complex nonlinear frequency-doubling and can be made compact, which will be useful for providing light sources formore » laser cooling experiments including transportable optical lattice clocks.« less

High-power direct diode laser output by spectral beam combining

NASA Astrophysics Data System (ADS)

Tan, Hao; Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao

2018-03-01

We demonstrate a spectral beam combining scheme based on multiple mini-bar stacks, which have more diode laser combining elements, to increase the combined diode laser power and realize equal beam quality in both the fast and slow axes. A spectral beam combining diode laser output of 1130 W is achieved with an operating current of 75 A. When a 9.6 X de-magnifying telescope is introduced between the output mirror and the diffraction grating, to restrain cross-talk among diode laser emitters, a 710 W spectral beam combining diode laser output is achieved at the operating current of 70 A, and the beam quality on the fast and slow axes of the combined beam is about 7.5 mm mrad and 7.3 mm mrad respectively. The power reduction is caused by the existence of a couple resonator between the rear facet of the diode laser and the fast axis collimation lens, and it should be eliminated by using diode laser chips with higher front facet transmission efficiency and a fast axis collimation lens with lower residual reflectivity.

The advances and characteristics of high-power diode laser materials processing

NASA Astrophysics Data System (ADS)

Li, Lin

2000-10-01

This paper presents a review of the direct applications of high-power diode lasers for materials processing including soldering, surface modification (hardening, cladding, glazing and wetting modifications), welding, scribing, sheet metal bending, marking, engraving, paint stripping, powder sintering, synthesis, brazing and machining. The specific advantages and disadvantages of diode laser materials processing are compared with CO 2, Nd:YAG and excimer lasers. An effort is made to identify the fundamental differences in their beam/material interaction characteristics and materials behaviour. Also an appraisal of the future prospects of the high-power diode lasers for materials processing is given.

Novel High Power Type-I Quantum Well Cascade Diode Lasers

DTIC Science & Technology

2017-08-30

Novel High Power Type-I Quantum Well Cascade Diode Lasers The views, opinions and/or findings contained in this report are those of the author(s...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6... High Power Type-I Quantum Well Cascade Diode Lasers Report Term: 0-Other Email: leon.shterengas@stonybrook.edu Distribution Statement: 1-Approved

Simulative research on the anode plasma dynamics in the high-power electron beam diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Dan; Liu, Lie; Ju, Jin-Chuan

2015-07-15

Anode plasma generated by electron beams could limit the electrical pulse-length, modify the impedance and stability of diode, and affect the generator to diode power coupling. In this paper, a particle-in-cell code is used to study the dynamics of anode plasma in the high-power electron beam diode. The effect of gas type, dynamic characteristic of ions on the diode operation with bipolar flow model are presented. With anode plasma appearing, the amplitude of diode current is increased due to charge neutralizations of electron flow. The lever of neutralization can be expressed using saturation factor. At same pressure of the anodemore » gas layer, the saturation factor of CO{sub 2} is bigger than the H{sub 2}O vapor, namely, the generation rate of C{sup +} ions is larger than the H{sup +} ions at the same pressure. The transition time of ions in the anode-cathode gap could be used to estimate the time of diode current maximum.« less

Far field beam pattern of one MW combined beam of laser diode array amplifiers for space power transmission

NASA Technical Reports Server (NTRS)

Kwon, Jin H.; Lee, Ja H.

1989-01-01

The far-field beam pattern and the power-collection efficiency are calculated for a multistage laser-diode-array amplifier consisting of about 200,000 5-W laser diode arrays with random distributions of phase and orientation errors and random diode failures. From the numerical calculation it is found that the far-field beam pattern is little affected by random failures of up to 20 percent of the laser diodes with reference of 80 percent receiving efficiency in the center spot. The random differences in phases among laser diodes due to probable manufacturing errors is allowed to about 0.2 times the wavelength. The maximum allowable orientation error is about 20 percent of the diffraction angle of a single laser diode aperture (about 1 cm). The preliminary results indicate that the amplifier could be used for space beam-power transmission with an efficiency of about 80 percent for a moderate-size (3-m-diameter) receiver placed at a distance of less than 50,000 km.

Efficient 2-μm Tm:YAP Q-switched and CW lasers

NASA Astrophysics Data System (ADS)

Hays, A. D.; Cole, Brian; King, Vernon; Goldberg, Lew

2018-02-01

Highly efficient, diode pumped Tm:YAP lasers generating emission in the 1.85-1.94 μm range are demonstrated and characterized. Laser optical efficiencies of 51% and 45%, and electrical efficiencies of 31% and 25% are achieved under CW and Q-switched operation, respectively. Laser performance was characterized for maximum average powers up to 20W with various cavity configurations, all using an intra-cavity lens to compensate for thermal lensing in the Tm:YAP crystal. Q-switched lasers incorportating a Cr:ZnS saturable absorber (SA), resonant mechanical mirror scanner, or acousto-optic modulator were characterized. To enable higher average output powers, measurements of the thermal lens were conducted for the Tm:YAP crystal as a function of pump power and were compared to values predicted by a finiteelement- analysis (FEA) thermal-optical model of the Tm:YAP crystal. A resonator model is developed to incorporate this calculated thermal lens and its effect on laser performance. This paper will address approaches for improving the performance of Tm:YAP lasers, and means for achieving increased average output powers while maintaining high optical efficiency for both SA and mechanical Q-switching.

Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique

NASA Astrophysics Data System (ADS)

Kim, Younghyun; Sung, Yunsu; Yang, Jung-Tack; Choi, Woo-Young

2018-02-01

The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

Generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser in a cascade of nonlinear crystals

NASA Astrophysics Data System (ADS)

Hansen, Anders K.; Jensen, Ole B.; Sumpf, Bernd; Erbert, Götz; Unterhuber, Angelika; Drexler, Wolfgang; Andersen, Peter E.; Petersen, Paul Michael

2014-02-01

Many applications, e.g., within biomedicine stand to benefit greatly from the development of diode laser-based multi- Watt efficient compact green laser sources. The low power of existing diode lasers in the green area (about 100 mW) means that the most promising approach remains nonlinear frequency conversion of infrared tapered diode lasers. Here, we describe the generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser, itself yielding 10 W at 1063 nm. This SHG is performed in single pass through a cascade of two PPMgO:LN crystals with re-focusing and dispersion compensating optics between the two nonlinear crystals. In the low-power limit, such a cascade of two crystals has the theoretical potential for generation of four times as much power as a single crystal without adding significantly to the complexity of the system. The experimentally achieved power of 3.5 W corresponds to a power enhancement greater than 2 compared to SHG in each of the crystals individually and is the highest visible output power generated by frequency conversion of a single diode laser. Such laser sources provide the necessary pump power for biophotonics applications, such as optical coherence tomography or multimodal imaging devices, e.g., FTCARS-OCT, based on a strongly pumped ultrafast Ti:Sapphire laser.

PCF based high power narrow line width pulsed fiber laser

NASA Astrophysics Data System (ADS)

Chen, H.; Yan, P.; Xiao, Q.; Wang, Y.; Gong, M.

2012-09-01

Based on semiconductor diode seeded multi-stage cascaded fiber amplifiers, we have obtained 88-W average power of a 1063-nm laser with high repetition rate of up to 1.5 MHz and a constant 2-ns pulse duration. No stimulated Brillouin scattering pulse or optical damage occurred although the maximum pulse peak power has exceeded 112 kW. The output laser exhibits excellent beam quality (M2x = 1.24 and M2y = 1.18), associated with a spectral line width as narrow as 0.065 nm (FWHM). Additionally, we demonstrate high polarization extinction ratio of 18.4 dB and good pulse stabilities superior to 1.6 % (RMS).

Cascaded a-cut Nd:YVO4 self-Raman with second-Stokes laser at 1313 nm

NASA Astrophysics Data System (ADS)

Xie, Zhi; Duan, Yanmin; Guo, Junhong; Huang, Xiaohong; Yan, Lifen; Zhu, Haiyong

2017-11-01

A diode-end-pumped, acousto-optic Q-switched second-Stokes self-Raman laser at 1313 nm was demonstrated in a common a-cut Nd:YVO4 crystal, with the primary Raman shift of 890 cm-1. At the incident pump power of 17.1 W, the maximum average output power up to 2.51 W and pulse width of 5 ns for second-Stokes were obtained with the pulse repetition frequency of 50 kHz. The slope efficiency and conversion efficiency with respect to the incident pump power are about 23.7% and 14.7%. The efficient output should be attributed to suitable transmittance of the output coupler used.

Subnanosecond Tm:KLuW microchip laser Q-switched by a Cr:ZnS saturable absorber.

PubMed

Loiko, Pavel; Serres, Josep Maria; Mateos, Xavier; Yumashev, Konstantin; Yasukevich, Anatoly; Petrov, Valentin; Griebner, Uwe; Aguiló, Magdalena; Díaz, Francesc

2015-11-15

Passive Q-switching of a compact Tm:KLu(WO(4))(2) microchip laser diode pumped at 805 nm is demonstrated with a polycrystalline Cr(2+):ZnS saturable absorber. This laser generates subnanosecond (780 ps) pulses with a pulse repetition frequency of 5.6 kHz at 1846.6 nm, the shortest pulse duration ever achieved by Q-switching of ~2 μm lasers. The maximum average output power is 146 mW with a slope efficiency of 21% with respect to the absorbed power. This corresponds to a pulse energy of 25.6 μJ and a peak power of 32.8 kW.

Passively mode-locking induced by gold nanorods in erbium-doped fiber lasers

NASA Astrophysics Data System (ADS)

Kang, Zhe; Xu, Yang; Zhang, Lei; Jia, Zhixu; Liu, Lai; Zhao, Dan; Feng, Yan; Qin, Guanshi; Qin, Weiping

2013-07-01

We demonstrated a passively mode-locked erbium-doped fiber laser by using gold nanorods as a saturable absorber. The gold nanorods (GNRs) were mixed with sodium carboxymethylcellulose (NaCMC) to form GNRs-NaCMC films. By inserting one of the GNRs-NaCMC films into an EDFL cavity pumped by a 980 nm laser diode, stable passively mode-locking was achieved with a threshold pump power of ˜54 mW, and 12 ps pulses at 1561 nm with a repetition rate of 34.7 MHz and a maximum average power of ˜2.05 mW were obtained for a pump power of ˜62 mW.

Submillimeter sources for radiometry using high power Indium Phosphide Gunn diode oscillators

NASA Technical Reports Server (NTRS)

Deo, Naresh C.

1990-01-01

A study aimed at developing high frequency millimeter wave and submillimeter wave local oscillator sources in the 60-600 GHz range was conducted. Sources involved both fundamental and harmonic-extraction type Indium Phosphide Gunn diode oscillators as well as varactor multipliers. In particular, a high power balanced-doubler using varactor diodes was developed for 166 GHz. It is capable of handling 100 mW input power, and typically produced 25 mW output power. A high frequency tripler operating at 500 GHz output frequency was also developed and cascaded with the balanced-doubler. A dual-diode InP Gunn diode combiner was used to pump this cascaded multiplier to produce on the order of 0.5 mW at 500 GHz. In addition, considerable development and characterization work on InP Gunn diode oscillators was carried out. Design data and operating characteristics were documented for a very wide range of oscillators. The reliability of InP devices was examined, and packaging techniques to enhance the performance were analyzed. A theoretical study of a new class of high power multipliers was conducted for future applications. The sources developed here find many commercial applications for radio astronomy and remote sensing.

High power diode lasers emitting from 639 nm to 690 nm

NASA Astrophysics Data System (ADS)

Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

2014-03-01

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

Development and fabrication of improved Schottky power diodes, phases I and II

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkle, M.; Taft, E. A.

1974-01-01

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values.

Plasma-filled applied B ion diode experiments using a plasma opening switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Renk, T.J.

1994-12-15

In order for a plasma opening switch (POS) to open quickly and transfer power efficiently from an inductively charged vacuum transmission line to an applied B ion diode, the load impedance of the ion diode may be required to have an initial low impedance phase. A plasma-filled diode has such an impedance history. To test the effect of a plasma-filled diode on POS-diode coupling, a drifting plasma was introduced from the cathode side of an applied B ion diode operated on the LION accelerator (1.5 MV, 4 [Omega], 40 ns) at Cornell University. This plasma readily crossed the 2.1 Tmore » magnetic insulation field of the diode, and resulted in both increased diode electrical power, and an increased ability of the ion beam to remove material from a target. The plasma did not appear to have a noticeable effect on local beam steering angle.« less

Diode amplifier of modulated optical beam power

DOE Office of Scientific and Technical Information (OSTI.GOV)

D'yachkov, N V; Bogatov, A P; Gushchik, T I

2014-11-30

Analytical relations are obtained between characteristics of modulated light at the output and input of an optical diode power amplifier operating in the highly saturated gain regime. It is shown that a diode amplifier may act as an amplitude-to-phase modulation converter with a rather large bandwidth (∼10 GHz). The low sensitivity of the output power of the amplifier to the input beam power and its high energy efficiency allow it to be used as a building block of a high-power multielement laser system with coherent summation of a large number of optical beams. (lasers)

Power loss in open cavity diodes and a modified Child-Langmuir law

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biswas, Debabrata; Kumar, Raghwendra; Puri, R.R.

Diodes used in most high power devices are inherently open. It is shown that under such circumstances, there is a loss of electromagnetic radiation leading to a lower critical current as compared to closed diodes. The power loss can be incorporated in the standard Child-Langmuir framework by introducing an effective potential. The modified Child-Langmuir law can be used to predict the maximum power loss for a given plate separation and potential difference as well as the maximum transmitted current for this power loss. The effectiveness of the theory is tested numerically.

Spectroscopic analysis and efficient diode-pumped 1.9 μm Tm3+-doped β'-Gd2(MoO4)3 crystal laser.

PubMed

Tang, Jianfeng; Chen, Yujin; Lin, Yanfu; Gong, Xinghong; Huang, Jianhua; Luo, Zundu; Huang, Yidong

2011-07-04

Tm3+-doped β'-Gd2(MoO4)3 single crystal was grown by the Czochralski method. Spectroscopic analysis was carried out along different polarizations. End-pumped by a quasi-cw diode laser at 795 nm in a plano-concave cavity, an average laser output power of 58 mW around 1.9 μm was achieved in a 0.93-mm-thick crystal when the output coupler transmission was 7.1%. The absorbed pump threshold was 8 mW and the slope efficiency of the laser was 57%. This crystal has smooth and broad gain curve around 1.9 μm, which shows that it is also a potential gain medium for tunable and short pulse lasers.

Influence of face-down and face-up bonding on the degree of polarization of superluminescent diode

NASA Astrophysics Data System (ADS)

Zhou, Shuai

2017-12-01

Face-down and face-up bonded polarization-insensitive buried heterojunction superluminescent diode has been studied in terms of thermal behavior and degree of polarization. Our studies have shown that the thermal rollover of current-power characteristic for face-down bonding was about 1.16 times higher than face-up configurations, and face-down bonding can offer higher heat transfer than face-up one. However, face-down bonding will cause more physical stress to the device, and the average value of degree of polarization for face-down bonding devices (35.3%) was much higher than face-up ones (-2.1%). After 48 h high temperature storage at 85∘C, the stress of face-down devices obtained a better relaxation due to the more stress accumulation.

Green high-power tunable external-cavity GaN diode laser at 515  nm.

PubMed

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-09-15

A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode laser system.

Green lasers are beyond power limits mandated by safety standards.

PubMed

Lee, M H; Fox, K; Goldwasser, S; Lau, D W M; Aliahmad, B; Sarossy, M

2016-08-01

There has been an increasing number of reports of people losing vision from laser exposure from pocket laser pointers despite the safety limit of 1 milliwatt (1mW) imposed by the Australian government. We hypothesize that this is because commercially available red and green laser pointers are exceeding their labeled power outputs. We tested the power outputs of 4 red and 4 green lasers which were purchased for less than AUD$30 each. The average of 10 measurements was recorded for each laser. We found that 3 out of 4 red lasers conformed to the 1mW safety standard; in contrast, all of the green lasers exceeded this limit, with one of the lasers recording an output of 127.9 mW. This contrast in compliance is explained by the construction of these lasers - green lasers are typically Diode Pumped Solid State (DPSS) lasers that can emit excessive infrared (IR) radiation with poor workmanship or inconsistent adherence to practices of safe design and quality control; red lasers are diode lasers which have limited power outputs due to `Catastrophic Optical Damage' (COD). Relevant professional bodies ought to advocate more strongly for stringent testing, quality control and licensing of DPSS lasers with a view towards government intervention to banning green laser pointer use.

808nm high-power high-efficiency GaAsP/GaInP laser bars

NASA Astrophysics Data System (ADS)

Wang, Ye; Yang, Ye; Qin, Li; Wang, Chao; Yao, Di; Liu, Yun; Wang, Lijun

2008-11-01

808nm high power diode lasers, which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems, have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers, and they could lead to new applications where space, weight and electrical power are critical. High efficiency devices generate less waste heat, which means less strain on the cooling system and more tolerance to thermal conductivity variation, a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GaInP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200μs, 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars, we fabricate a 1x3 arrays, the maximum power is 64.3W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A, the slope efficiency is 3.37 W/A.

Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

PubMed

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

PubMed Central

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I–V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems. PMID:22164066

Design and characterization of a novel power over fiber system integrating a high power diode laser

NASA Astrophysics Data System (ADS)

Perales, Mico; Yang, Mei-huan; Wu, Cheng-liang; Hsu, Chin-wei; Chao, Wei-sheng; Chen, Kun-hsein; Zahuranec, Terry

2017-02-01

High power 9xx nm diode lasers along with MH GoPower's (MHGP's) flexible line of Photovoltaic Power Converters (PPCs) are spurring high power applications for power over fiber (PoF), including applications for powering remote sensors and sensors monitoring high voltage equipment, powering high voltage IGBT gate drivers, converters used in RF over Fiber (RFoF) systems, and system power applications, including powering UAVs. In PoF, laser power is transmitted over fiber, and is converted to electricity by photovoltaic cells (packaged into Photovoltaic Power Converters, or PPCs) which efficiently convert the laser light. In this research, we design a high power multi-channel PoF system, incorporating a high power 976 nm diode laser, a cabling system with fiber break detection, and a multichannel PPC-module. We then characterizes system features such as its response time to system commands, the PPC module's electrical output stability, the PPC-module's thermal response, the fiber break detection system response, and the diode laser optical output stability. The high power PoF system and this research will serve as a scalable model for those interested in researching, developing, or deploying a high power, voltage isolated, and optically driven power source for high reliability utility, communications, defense, and scientific applications.

Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator

NASA Astrophysics Data System (ADS)

Kim, Yong-Hae; Han, Jun-Han; Kang, Seung-Youl; Cheon, Sanghoon; Lee, Myung-Lae; Ahn, Seong-Deok; Zyung, Taehyoung; Lee, Jeong-Ik; Moon, Jaehyun; Chu, Hye Yong

2012-09-01

We are successful to lit the organic light emitting diode (OLED) lighting panel through the magnetically coupled wireless power transmission technology. For the wireless power transmission, we used the operation frequency 932 kHz, specially designed double spiral type transmitter, small and thin receiver on the four layered printed circuit board, and schottky diodes for the full bridge rectifier. Our white OLED is a hybrid type, in which phosphorescent and fluorescent organics are used together to generate stable white color. The total efficiency of power transmission is around 72%.

The effects of nuclear radiation on Schottky power diodes and power MOSFETs

NASA Astrophysics Data System (ADS)

Kulisek, Jonathan Andrew

NASA is exploring the potential use of nuclear reactors as power sources for future space missions. These missions will require electrical components, consisting of power circuits and semiconductor devices, to be placed in close vicinity to the reactor, in the midst of a high neutron and gamma-ray radiation field. Therefore, the primary goal of this research is to examine the effects of a mixed neutron and gamma-ray radiation field on the static and dynamic electrical performance of power Schottky diodes and power MOSFETs in order to support future design efforts of radiation-hard power semiconductors and circuits. In order to accomplish this, non-radiation hardened commercial power Si and SiC Schottky power diodes, manufactured by International Rectifier and Cree, respectively, were irradiated in the Ohio State University Research Reactor (OSURR), and their degradation in electrical performance was observed using I-V characterization. Key electrical performance parameters were extracted using least squares curve-fits of the corresponding semiconductor physics model equations to the experimental data, and these electrical performance parameters were used to model the diodes in PSpice. A half-wave rectifier circuit containing Cree SiC Schottky diodes, rated for 5 A DC forward current and 1200 V DC blocking voltage, was also tested and modeled in order to determine and analyze changes in overall circuit performance and diode power dissipation as a function of radiation dose. Also, electrical components will be exposed to charged particle radiation from space, such as high energy protons in the Van Allen Radiation Belts surrounding earth. Therefore, the results from this study, with respect to the Si and SiC Schottky power diodes, were compared to results published by NASA, which had tested the same diode models at the Indiana University Cyclotron Facility (IUCF) with a 203 MeV proton beam. The comparison was made on the basis of displacement damage dose, calculated with the aid of MCNPX 2.6.0, a charged particle transport code. From the results of the calculation, it was determined that the response of both the Si and SiC diodes to the OSURR neutron and gamma-ray radiation field could be used to predict the response of the same diodes to the 203 MeV proton beam to a reasonable extent, relative to other published studies employing the same model. In addition, 100 V and 500 V power MOSFETs were irradiated in the OSURR, and their degradation in electrical performance was observed using I-V characterization. Changes in threshold voltage, transconductance parameter, and on-state resistance were observed for both 100 V and 500 V MOSFETs and were attributed to radiation-induced degradation of the SiO2 gate, Si-SiO2 interface, and n- drift layer. Furthermore, diodes and MOSFETs were irradiated and tested in basic power electronic circuits in order to determine the overall circuit response, as well as the dynamic electrical performance characteristics of the diodes and MOSFETs as they are switched from conducting (on) to non-conducting (off) states. All of the Schottky diodes maintained their voltage-blocking capability in the tested circuits, despite substantial radiation-induced increases in series resistance. Also, as radiation dose increased, an increase was observed in the turn-off delay times and turn-off times of the MOSFETs coupled with a decrease in turn-on delay time, which caused an increase in the output voltage in the buck and boost converters of which the MOSFETs were a part. Furthermore, the power dissipation in the MOSFETs during conduction and the over-voltage turn-off transient increased as a function of radiation dose, while the power dissipation during turn-on was essentially unaffected by the radiation.

Novel power MOSFET-based expander for high frequency ultrasound systems.

PubMed

Choi, Hojong; Shung, K Kirk

2014-01-01

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4% and 240% compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. Copyright © 2013 Elsevier B.V. All rights reserved.

Novel Power MOSFET-Based Expander for High Frequency Ultrasound Systems

PubMed Central

Choi, Hojong; Shung, K. Kirk

2014-01-01

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4 % and 240 % compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. PMID:23835308

Continued improvement in reduced-mode (REM) diodes enable 272 W from 105 μm 0.15 NA beam

NASA Astrophysics Data System (ADS)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2017-02-01

High-power, high-brightness diode lasers from 8xx nm to 9xx nm have been pursued in many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. Thus, there have been many technical efforts on driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, elementTM. In the past decade, the amount of power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brilliance and the development of techniques for efficiently coupling multiple emitters into a single fiber. In this paper, we demonstrate the further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report the record 272W from a 2×9 elementTM with 105 μm/0.15 NA beam using x-REM diodes and a new product introduction at 200W output power from 105 μm/0.15 NA beam at 915 nm.

Compact near-IR and mid-IR cavity ring down spectroscopy device

NASA Technical Reports Server (NTRS)

Miller, J. Houston (Inventor)

2011-01-01

This invention relates to a compact cavity ring down spectrometer for detection and measurement of trace species in a sample gas using a tunable solid-state continuous-wave mid-infrared PPLN OPO laser or a tunable low-power solid-state continuous wave near-infrared diode laser with an algorithm for reducing the periodic noise in the voltage decay signal which subjects the data to cluster analysis or by averaging of the interquartile range of the data.

Effect of diode lasers with wavelength of 445 and 980 nm on a temperature rise when uncovering implants for second stage surgery: An ex-vivo study in pigs.

PubMed

Matys, Jacek; Flieger, Rafał; Dominiak, Marzena

2017-07-01

Many surgical procedures in soft tissue are performed using diode lasers. Recently, a novel diode laser operating at 445 nm wavelength was introduced in dentistry. The aim of our study was to evaluate the time of surgery and an increase in temperature of titanium implants during its uncovering using 445 and 980 nm wavelengths. The research included 45 pig mandibles (n = 45). The specimens were randomly divided into 3 groups (n = 15) according to the laser irradiation mode and wavelength; G1 - 445 nm laser, power: 3 W, continuous wave (CW), distance: 2 mm, power density: 7460 W/cm2, fiber: 320 μm, noncontact mode; G2 - 445 nm laser (power: 2 W, CW, power density: 4970 W/cm2, fiber: 320 μm, contact mode; G3 (control) - 980 nm laser, power: 2.5 W, CW, power density: 15920 W/cm2, fiber: 200 μm, contact mode. The temperature was measured with a 2 K-type thermocouples (a P1 at collar and a P2 at mid height of the implant). The mean temperature rises measured by the P1 thermocouple were 16.9°C, 36.1°C and 21.6°C in the G1, G2 and G3 group, respectively. Significant differences in temperature rise were found between the G1 and G2 group (p = 0.0007) and the G2 and G3 group (p = 0.01). The mean temperature rises measured by the P2 thermocouple were 1.8°C, 1.4°C and 5.6°C in the G1, G2 and G3 group, respectively. Significant differences in temperature rise were found between the G1 and the G2 or G3 group (p = 0.0001). The significant differences among the study groups in average time necessary for uncovering the implants amounted to 69.7, 54.4 and 83.6 s, respectively (p < 0.05). The application of the 445 nm diode laser in non-contact mode reduced the temperature rise of the implants. The additional pulse intervals during laser irradiation with wavelength of 445 nm when operating in contact mode are needed.

Blue laser diode (450 nm) systems for welding copper

NASA Astrophysics Data System (ADS)

Silva Sa, M.; Finuf, M.; Fritz, R.; Tucker, J.; Pelaprat, J.-M.; Zediker, M. S.

2018-02-01

This paper will discuss the development of high power blue laser systems for industrial applications. The key development enabling high power blue laser systems is the emergence of high power, high brightness laser diodes at 450 nm. These devices have a high individual brightness rivaling their IR counterparts and they have the potential to exceed their performance and price barriers. They also have a very high To resulting in a 0.04 nm/°C wavelength shift. They have a very stable lateral far-field profile which can be combined with other diodes to achieve a superior brightness. This paper will report on the characteristics of the blue laser diodes, their integration into a modular laser system suitable for scaling the output power to the 1 kW level and beyond. Test results will be presented for welding of copper with power levels ranging from 150 Watts to 600 Watts

Analysis of High-Power Diode Laser Heating Effects on HY-80 Steel for Laser Assisted Friction Stir Welding Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiechec, Maxwell; Baker, Brad; McNelley, Terry

In this research, several conditions of high power diode laser heated HY-80 steel were characterized to determine the viability of using such lasers as a preheating source before friction stir welding in order to reduce frictional forces thereby reducing tool wear and increasing welding speeds. Differences in microstructures within heat affected zones were identified at specific laser powers and traverse speeds. Vickers hardness values were recorded and analyzed to validate the formation of additional martensite in diode laser heated regions of HY-80 steel. Conditions that produced little to no additional martensite were identified and relationships among high power diode lasermore » power, traverse speed, and martensite formation were determined. The development of heat affected zones, change in grain structure, and creation of additional martensite in HY-80 can be prevented through the optimization of laser amperage and transverse speed.« less

Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

2004-01-01

Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

Contact diode laser: high power application through fiberoptic cutting tips.

PubMed

Wafapoor, H; Peyman, G A; Moritera, T

1994-01-01

Diode laser energy has been applied through a fiberoptic probe using a power setting of 2.5 watts (W) in the continuous mode. In this study we employed high-power diode laser energy (4 to 12 W, continuous wave) to incise ocular tissue through a fiberoptic probe using 100 microns and 300 microns tips. The retina was photocoagulated with a 300 microns orb tip. No bleeding occurred at the incision sites. Histologic evaluation revealed coagulation into the healthy tissue ranging from 10 to 50 microns.

Overview on new diode lasers for defense applications

NASA Astrophysics Data System (ADS)

Neukum, Joerg

2012-11-01

Diode lasers have a broad wavelength range, from the visible to beyond 2.2μm. This allows for various applications in the defense sector, ranging from classic pumping of DPSSL in range finders or target designators, up to pumping directed energy weapons in the 50+ kW range. Also direct diode applications for illumination above 1.55μm, or direct IR countermeasures are of interest. Here an overview is given on some new wavelengths and applications which are recently under discussion. In this overview the following aspects are reviewed: • High Power CW pumps at 808 / 880 / 940nm • Pumps for DPAL - Diode Pumped Alkali Lasers • High Power Diode Lasers in the range < 1.0 μm • Scalable Mini-Bar concept for high brightness fiber coupled modules • The Light Weight Fiber Coupled module based on the Mini-Bar concept Overall, High Power Diode Lasers offer many ways to be used in new applications in the defense market.

High power visible diode laser for the treatment of eye diseases by laser coagulation

NASA Astrophysics Data System (ADS)

Heinrich, Arne; Hagen, Clemens; Harlander, Maximilian; Nussbaumer, Bernhard

2015-03-01

We present a high power visible diode laser enabling a low-cost treatment of eye diseases by laser coagulation, including the two leading causes of blindness worldwide (diabetic retinopathy, age-related macular degeneration) as well as retinopathy of prematurely born children, intraocular tumors and retinal detachment. Laser coagulation requires the exposure of the eye to visible laser light and relies on the high absorption of the retina. The need for treatment is constantly increasing, due to the demographic trend, the increasing average life expectancy and medical care demand in developing countries. The World Health Organization reacts to this demand with global programs like the VISION 2020 "The right to sight" and the following Universal Eye Health within their Global Action Plan (2014-2019). One major point is to motivate companies and research institutes to make eye treatment cheaper and easily accessible. Therefore it becomes capital providing the ophthalmology market with cost competitive, simple and reliable technologies. Our laser is based on the direct second harmonic generation of the light emitted from a tapered laser diode and has already shown reliable optical performance. All components are produced in wafer scale processes and the resulting strong economy of scale results in a price competitive laser. In a broader perspective the technology behind our laser has a huge potential in non-medical applications like welding, cutting, marking and finally laser-illuminated projection.

Efficient Q-switched operation in 1.64 μm Er:YAG tapered rod laser

NASA Astrophysics Data System (ADS)

Polyakov, Vadim M.; Vitkin, Vladimir V.; Krylov, Alexandr A.; Uskov, Alexander V.; Mak, Andrey A.

2017-02-01

We model output characteristics of the 1645 nm 8 mJ 10 ns 100 Hz Q-switched Er:YAG DPSSL. The laser is end pumped at a wavelength of 1532 nm. Fiber-coupled diode laser module was 10 nm FWHM, 12 W CW, 200 μm, NA 0.22. Various tapering of the active rod has been considered for 1 mm diameter, 20 mm long and 0.5% Er doping. We discuss the heat deposition process, the energy storage efficiency and the average power limitations for Q-switched regime of generation and amplification, and find the system scalable for the high power operation.

LED intense headband light source for fingerprint analysis

DOEpatents

Villa-Aleman, Eliel

2005-03-08

A portable, lightweight and high-intensity light source for detecting and analyzing fingerprints during field investigation. On-site field analysis requires long hours of mobile analysis. In one embodiment, the present invention comprises a plurality of light emitting diodes; a power source; and a personal attachment means; wherein the light emitting diodes are powered by the power source, and wherein the power source and the light emitting diodes are attached to the personal attachment means to produce a personal light source for on-site analysis of latent fingerprints. The present invention is available for other applications as well.

High-power and highly efficient diode-cladding-pumped holmium-doped fluoride fiber laser operating at 2.94 microm.

PubMed

Jackson, Stuart D

2009-08-01

A high-power diode-cladding-pumped Ho(3+), Pr(3+)-doped fluoride glass fiber laser is demonstrated. The laser produced a maximum output power of 2.5 W at a slope efficiency of 32% using diode lasers emitting at 1,150 nm. The long-emission wavelength of 2.94 microm measured at maximum pump power, which is particularly suited to medical applications, indicates that tailoring of the proportion of Pr(3+) ions can provide specific emission wavelengths while providing sufficient de-excitation of the lower laser level.

Optimization of Passive Low Power Wireless Electromagnetic Energy Harvesters

PubMed Central

Nimo, Antwi; Grgić, Dario; Reindl, Leonhard M.

2012-01-01

This work presents the optimization of antenna captured low power radio frequency (RF) to direct current (DC) power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical models show that the maximum voltage gain of the coupled resonators is mainly related to the antenna, diode and load (remote sensor) resistances at matched conditions or resonance. The analytical models were verified with experimental results. Different passive wireless RF power harvesters offering high selectivity, broadband response and high voltage sensitivity are presented. Measured results show that with an optimal resistance of antenna and diode, it is possible to achieve high RF to DC voltage sensitivity of 0.5 V and efficiency of 20% at −30 dBm antenna input power. Additionally, a wireless harvester (rectenna) is built and tested for receiving range performance. PMID:23202014

Optimization of passive low power wireless electromagnetic energy harvesters.

PubMed

Nimo, Antwi; Grgić, Dario; Reindl, Leonhard M

2012-10-11

This work presents the optimization of antenna captured low power radio frequency (RF) to direct current (DC) power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical models show that the maximum voltage gain of the coupled resonators is mainly related to the antenna, diode and load (remote sensor) resistances at matched conditions or resonance. The analytical models were verified with experimental results. Different passive wireless RF power harvesters offering high selectivity, broadband response and high voltage sensitivity are presented. Measured results show that with an optimal resistance of antenna and diode, it is possible to achieve high RF to DC voltage sensitivity of 0.5 V and efficiency of 20% at -30 dBm antenna input power. Additionally, a wireless harvester (rectenna) is built and tested for receiving range performance.

Extending solid state laser performance

NASA Astrophysics Data System (ADS)

Miesak, Ed

2017-02-01

Coherent Diode-Pumped Solid-State Orlando (CDO), formerly known as Lee Laser, headquartered in Orlando Florida produces CW and pulsed solid state lasers. Primary wavelengths include 1064 nm, 532 nm, and 355 nm. Other wavelengths produced include 1320 nm, 15xx nm, and 16xx nm. Pulse widths are in the range of singles to hundreds of nanoseconds. Average powers are in the range of a few watts to 1000 watts. Pulse repetition rates are typically in the range of 100 Hz to 100 KHz. Laser performance parameters are often modified according to customer requests. Laser parameters that can be adjusted include average power, pulse repetition rate, pulse length, beam quality, and wavelength. Laser parameters are typically cross-coupled such that adjusting one may change some or all of the others. Customers often request one or more parameters be changed without changing any of the remaining parameters. CDO has learned how to accomplish this successfully with rapid turn-around times and minimal cost impact. The experience gained by accommodating customer requests has produced a textbook of cause and effect combinations of laser components to accomplish almost any parameter change request. Understanding the relationships between component combinations provides valuable insight into lasing effects allowing designers to extend laser performance beyond what is currently available. This has led to several break through products, i.e. >150W average power 355 nm, >60W average power 6 ps 1064 nm, pulse lengths longer than 400 ns at 532 nm with average power >100W, >400W 532 nm with pulse lengths in the 100 ns range.

Development and fabrication of improved Schottky power diodes

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkel, M.; Taft, E. A.

1975-01-01

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

Power and stability limitations of resonant tunneling diodes

NASA Technical Reports Server (NTRS)

Kidner, C.; Mehdi, I.; East, J. R.; Haddad, G. I.

1990-01-01

Stability criteria for resonant tunneling diodes are investigated. Details of how extrinsic elements, such as series inductance and parallel capacitance, affect the stability are presented. A GaAs/AlAs/InGaAs/AlAs/GaAs double-barrier diode is investigated, showing the effect of different modes of low-frequency oscillation and the extrinsic circuit required for stabilization. The effect of device stabilization on high-frequency power generation is described. The main conclusions of the paper are: (1) stable resonant tunneling diode operation is difficult to obtain, and (2) the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices.

MoS2-based passively Q-switched diode-pumped Nd:YAG laser at 946 nm

NASA Astrophysics Data System (ADS)

Lin, Haifeng; Zhu, Wenzhang.; Xiong, Feibing; Cai, Lie

2017-06-01

We demonstrate a passively Q-switched Nd: YAG quasi-three-level laser operating at 946 nm using MoS2 as saturable absorber. A maximum average output power of 210 mW is achieved at an absorbed pump power of 6.67 W with a slope efficiency of about 5.8%. The shortest pulse width and maximum pulse repetition frequency are measured to be 280 ns and 609 kHz, respectively. The maximum pulse energy and maximum pulse peak power are therefore estimated to be about 0.35 μJ and 1.23 W, respectively. This work represents the first MoS2-based Q-switched laser operating at 0.9 μm spectral region.

Performance of chemical vapor deposition fabricated graphene absorber mirror in Yb3+ : Sc2SiO5 mode-locked laser

NASA Astrophysics Data System (ADS)

Cai, Wei; Li, Yaqi; Zhu, Hongtong; Jiang, Shouzhen; Xu, Shicai; Liu, Jie; Zheng, Lihe; Su, Liangbi; Xu, Jun

2014-12-01

A reflective graphene saturable absorber mirror (SAM) was successfully fabricated by chemical vapor deposition technology. A stable diode-pumped passively mode-locked Yb3+:Sc2SiO5 laser using a graphene SAM as a saturable absorber was accomplished for the first time. The measured average output power amounts to 351 mW under the absorbed pump power of 12.5 W. Without prisms compensating for dispersion, the minimum pulse duration of 7 ps with a repetition rate of 97 MHz has been obtained at the central wavelength of 1063 nm. The corresponding peak power and the maximum pulse energy were 516 W and 3.6 nJ, respectively.

Implementation and validation of a CubeSat laser transmitter

NASA Astrophysics Data System (ADS)

Kingsbury, R. W.; Caplan, D. O.; Cahoy, K. L.

2016-03-01

The paper presents implementation and validation results for a CubeSat-scale laser transmitter. The master oscillator power amplifier (MOPA) design produces a 1550 nm, 200mW average power optical signal through the use of a directly modulated laser diode and a commercial fiber amplifier. The prototype design produces high-fidelity M-ary pulse position modulated (PPM) waveforms (M=8 to 128), targeting data rates > 10 Mbit/s while meeting a constraining 8W power allocation. We also present the implementation of an avalanche photodiode (APD) receiver with measured transmitter-to-receiver performance within 3 dB of theory. Via loopback, the compact receiver design can provide built-in self-test and calibration capabilities, and supports incremental on-orbit testing of the design.

Development of thermally controlled HALNA DPSSL for inertial fusion energy

NASA Astrophysics Data System (ADS)

Matsumoto, Osamu; Yasuhara, Ryo; Kurita, Takashi; Ikegawa, Tadashi; Sekine, Takashi; Kawashima, Toshiyuki; Kawanaka, Junji; Norimatsu, Takayoshi; Miyanaga, Noriaki; Izawa, Yasukazu; Nakatsuka, Masahiro; Miyamoto, Masahiro; Kan, Hirofumi; Furukawa, Hiroyuki; Motokoshi, Shinji

2006-02-01

We have been developing a high average-power laser system for science and industry applications that can generate an output of 20 J per pulse at 10-Hz operation. Water-cooled Nd:glass zig-zag slab is pumped with 803-nm AlGaAs laser-diode modules. To efficiently extract energy from the laser medium, the laser beam alternately passes through dual zig-zag slab amplifier modules. Twin LD modules equipped on each slab amplifier module pump the laser medium with a peak power density of 2.5 kW/cm2. In high power laser system, thermal load in the laser medium causes serious thermal effects. We arranged cladding glasses on the top and bottom of the laser slab to reduce thermal effects.

Compact high-power optical source for resonant infrared pulsed laser ablation and deposition of polymer materials

NASA Astrophysics Data System (ADS)

Kolev, V. Z.; Duering, M. W.; Luther-Davies, B.; Rode, A. V.

2006-12-01

We propose a novel tuneable table-top optical source as an alternative to the free electron laser currently used for resonant infrared pulsed laser deposition of polymers. It is based on two-stage pulsed optical parametric amplification using MgO doped periodically poled lithium niobate crystals. Gain in excess of 106 in the first stage and pump depletion of 58% in the second stage were achieved when the system was pumped by a high-power Nd:YVO4 picosecond laser source at 1064 nm and seeded by a CW tuneable diode laser at 1530 nm. An average power of 2 W was generated at 3.5 µm corresponding to 1.3 µJ pulse energy.

Wavelength dependence of l/f noise in the light output of laser diodes; An experimental study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fronen, R.J.

1990-10-01

The optical power emitted by a monomode GaAlAs laser is filtered with a monochromator. The 1/f noise in the filtered emission is found to be directly dependent on the noncoherent emission, such as S{sub p} {proportional to} P{sup m {sub nc}}. Here S{sub p} is the spectral density of the 1/f fluctuations, P{sub nc} is the average noncoherent power, m = 3/2 under spontaneous emission, and m=4 in the superradiation and laser regions. This paper reports that study of the 1/f noise in the optical power in a band centered at the laser wavelength and with variable bandwidth shows threemore » operating regions.« less

Investigation on emission characteristics of metal-ceramic cathode applied to industrial X-ray diode.

PubMed

Xun, Ma; Jianqiang, Yuan; Hongwei, Liu; Hongtao, Li; Lingyun, Wang; Ping, Jiang

2016-06-01

The industrial x-ray diode with high impedance configuration is usually adopted to generate repetitive x-ray, but its performance would be worsened due to lower electric field on the cathode of diode when a voltage of several hundreds of kV is applied. To improve its performance, a novel metal-ceramic cathode is proposed in this paper. Key factors (width, relative permittivity of ceramic, and so on) affecting electric field distribution on triple points are analyzed by electrostatic field calculation program, so as to optimize the design of this novel cathode. Experiments are done to study the characteristics including emission current of cathode, diode voltage duration, diode mean dynamic impedance, and diode impedance drop velocity within diode power duration. The results show that metal-ceramic cathode could improve diode performance by enhancing emission current and stabling impedance; the impedance drop velocity of diode with spoke-shaped metal-ceramic cathode was reduced to -5 Ω ns(-1) within diode power duration, comparing to -15 Ω ns(-1) with metal foil cathode.

Enhanced Performance of GaN-Based Green Light-Emitting Diodes with Gallium-Doped ZnO Transparent Conducting Oxide

NASA Astrophysics Data System (ADS)

Oh, Min-Suk; Seo, Inseok

2014-04-01

Ga-doped ZnO (GZO) transparent conducting oxide was grown by oxygen plasma-enhanced pulsed laser deposition. GZO grown in the presence of oxygen radicals had resistivity of 1 × 10-3 Ω cm and average visible (500-700 nm) transmittance of 92.5%. A low specific contact resistance of 6.5 × 10-4 Ω cm2 of GZO on p-GaN was achieved by excimer laser annealing (ELA) treatment of p-GaN before GZO electrode deposition. The ELA-treated light emitting diode (LED) fabricated with the GZO electrode as a current-spreading layer resulted in light-output power enhanced by 56.2% at 100 mA compared with that fabricated with a conventional Ni/Au metal electrode. The high-light output and low degradation of light-output power were attributed to the decrease in contact resistance between the p-GaN layer and the GZO electrode and uniform current spreading over the p-GaN layer. In addition, low contact resistance results in a decrease of self-heat generation during current drive.

Human papilloma virus lesions of the oral cavity: healing and relapse after treatment with 810-980 nm diode laser.

PubMed

Angiero, Francesca; Buccianti, Alberto; Parma, Luisa; Crippa, Rolando

2015-02-01

This study evaluated the therapeutic efficacy of laser therapy in treating oral human papilloma virus (HPV) lesions. In particular, mode of action, healing, postoperative patient compliance, visual numeric scale (VNS) pain index, and recurrence were analyzed. During 2001-2012, in 170 patients (80 women and 90 men), 174 intraoral and lip HPV lesions were detected and excised by diode laser of different wavelengths (810-980 nm), with an average power of 2.1 W, in continuous wave mode, using 300 to 320 μm optical fibers. In most cases (95.4%), complete healing occurred in the first 30 days. There were no adverse effects and all patients were carefully followed up until complete healing occurred, documenting any complications. There was only one recurrence, which was later treated successfully; the mean VNS pain score was below one. In treating HPV lesions, the diode laser is not only a valuable tool for their eradication but especially it reduces relapses, thanks to the characteristics of the laser light.

Wavelength switchable high-power diode-side-pumped rod Tm:YAG Laser around 2µm.

PubMed

Wang, Caili; Du, Shifeng; Niu, Yanxiong; Wang, Zhichao; Zhang, Chao; Bian, Qi; Guo, Chuan; Xu, Jialin; Bo, Yong; Peng, Qinjun; Cui, Dafu; Zhang, Jingyuan; Lei, Wenqiang; Xu, Zuyan

2013-03-25

We report a high-power diode-side-pumped rod Tm:YAG laser operated at either 2.07 or 2.02 µm depending on the transmission of pumped output coupler. The laser yields 115W of continuous-wave output power at 2.07 µm with 5% output coupling, which is the highest output power for all solid-state 2.07 μm cw rod Tm:YAG laser reported so far. With an output coupler of 10% transmission, the center wavelength of the laser is switched to 2.02 μm with an output power of 77.1 W. This is the first observation of high-power wavelength switchable diode-side-pumped rod Tm:YAG laser around 2 µm.

Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogart, Katherine Huderle Andersen; Shul, Randy John; Stevens, Jeffrey

2008-10-01

Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al{sub x} Ga{sub 1-x} N-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF) power to achieve a facet angle of 5 deg from vertical. Subsequent etching in AZ400K developer was investigated to reduce the facet surface roughness and improve facet verticality. The resulting combined processes produced improved facet sidewalls with an average angle of 0.7 deg from vertical and less than 2-nm root-mean-square (RMS) roughness, yielding an estimated reflectivity greatermore » than 95% of that of a perfectly smooth and vertical facet.« less

Power blue and green laser diodes and their applications

NASA Astrophysics Data System (ADS)

Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

2013-03-01

InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

Robust modeling and performance analysis of high-power diode side-pumped solid-state laser systems.

PubMed

Kashef, Tamer; Ghoniemy, Samy; Mokhtar, Ayman

2015-12-20

In this paper, we present an enhanced high-power extrinsic diode side-pumped solid-state laser (DPSSL) model to accurately predict the dynamic operations and pump distribution under different practical conditions. We introduce a new implementation technique for the proposed model that provides a compelling incentive for the performance assessment and enhancement of high-power diode side-pumped Nd:YAG lasers using cooperative agents and by relying on the MATLAB, GLAD, and Zemax ray tracing software packages. A large-signal laser model that includes thermal effects and a modified laser gain formulation and incorporates the geometrical pump distribution for three radially arranged arrays of laser diodes is presented. The design of a customized prototype diode side-pumped high-power laser head fabricated for the purpose of testing is discussed. A detailed comparative experimental and simulation study of the dynamic operation and the beam characteristics that are used to verify the accuracy of the proposed model for analyzing the performance of high-power DPSSLs under different conditions are discussed. The simulated and measured results of power, pump distribution, beam shape, and slope efficiency are shown under different conditions and for a specific case, where the targeted output power is 140 W, while the input pumping power is 400 W. The 95% output coupler reflectivity showed good agreement with the slope efficiency, which is approximately 35%; this assures the robustness of the proposed model to accurately predict the design parameters of practical, high-power DPSSLs.

Hybrid electroluminescent devices

DOEpatents

Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

2010-08-03

A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

Elimination of current spikes in buck power converters

NASA Technical Reports Server (NTRS)

Mclyman, W. T. (Inventor)

1981-01-01

Current spikes in a buck power converter due to commutating diode turn-off time are eliminated by using a tapped inductor in the converter with the tap connected to the switching transistor. The commutating diode is not in the usual place, but is instead connected to conduct current from one end of the tapped inductor remote from the load during the interval in which the transistor is not conducting. In the case of a converter having a center-tapped (primary and secondary) transformer between two switching power transistors operated in a push-pull mode and two rectifying diodes in the secondary circuit, current spikes due to transformer saturation are also eliminated by using a tapped inductor in the converter with the tap connected to the rectifying diodes and a diode connected to conduct current from one end of the tapped inductor remote from the load during the interval in which the transistors are not conducting.

11-kW direct diode laser system with homogenized 55 × 20 mm2 Top-Hat intensity distribution

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Noeske, Axel; Kindervater, Tobias; Wessollek, Armin; Brand, Thomas; Biesenbach, Jens

2007-02-01

In comparison with other laser systems diode lasers are characterized by a unique overall efficiency, a small footprint and high reliability. However, one major drawback of direct diode laser systems is the inhomogeneous intensity distribution in the far field. Furthermore the output power of current commercially available systems is limited to about 6 kW. We report on a diode laser system with 11 kW output power at a single wavelength of 940 nm aiming for customer specific large area treatment. To the best of our knowledge this is the highest output power reported so far for a direct diode laser system. In addition to the high output power the intensity distribution of the laser beam is homogenized in both axes leading to a 55 x 20 mm2 Top-Hat intensity profile at a working distance of 400 mm. Homogeneity of the intensity distribution is better than 90%. The intensity in the focal plane is 1 kW/cm2. We will present a detailed characterization of the laser system, including measurements of power, power stability and intensity distribution of the homogenized laser beam. In addition we will compare the experimental data with the results of non-sequential raytracing simulations.

Active mirror amplifiers for HiPER kiloJoule beamlines

NASA Astrophysics Data System (ADS)

Chanteloup, J.-C.; Lucianetti, A.

2013-11-01

A major challenge the HiPER [1] project is facing is to derive laser architectures satisfying simultaneously all HiPER requirements; among them, high wall-plug efficiency (15 to 20%) and repetition rate (around 10 Hz) are the most challenging constraints. Several groups over the world are actively pursuing research in the field of High average power Diode Pumped Solid State Lasers (DPSSL) [2]. We propose a comprehensive solution for a 1 kJ DPSSL beamline as the unit brick of a 12 beams bundle.

Sub-100-ps amplitude-modulation mode-locked Tm-Ho:BaY2F8 laser at 2.06 μm

NASA Astrophysics Data System (ADS)

Galzerano, G.; Marano, M.; Longhi, S.; Sani, E.; Toncelli, A.; Tonelli, M.; Laporta, P.

2003-11-01

We report the generation of sub-100-ps pulse trains near the 2.06-μm wavelength in an actively mode-locked diode-pumped Tm-Ho:BaYF laser operating at room temperature. Transform-limited, 97-ps Gaussian pulses at a 100-MHz repetition rate with an average power in excess of 20 mW and with a carrier wavelength tunable by ~50 nm near 2.066 μm are demonstrated.

Diode pumped Nd:YAG laser development

NASA Technical Reports Server (NTRS)

Reno, C. W.; Herzog, D. G.

1976-01-01

A low power Nd:YAG laser was constructed which employs GaAs injection lasers as a pump source. Power outputs of 125 mW TEM CW with the rod at 250 K and the pump at 180 K were achieved for 45 W input power to the pump source. Operation of the laser, with array and laser at a common heat sink temperature of 250 K, was inhibited by difficulties in constructing long-life GaAs LOC laser arrays. Tests verified pumping with output power of 20 to 30 mW with rod and pump at 250 K. Although life tests with single LOC GaAs diodes were somewhat encouraging (with single diodes operating as long as 9000 hours without degradation), failures of single diodes in arrays continue to occur, and 50 percent power is lost in a few hundred hours at 1 percent duty factor. Because of the large recent advances in the state of the art of CW room temperature AlGaAs diodes, their demonstrated lifetimes of greater than 5,000 hours, and their inherent advantages for this task, it is recommended that these sources be used for further CW YAG injection laser pumping work.

Extremely high-brightness kW-class fiber coupled diode lasers with wavelength stabilization

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-06-01

TeraDiode has produced ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Higher brightness fiber-coupled diode lasers, including a module with 418 W of power coupled to a 100 μm, 0.15 NA fiber, have also been demonstrated.

High-power direct-diode laser successes

NASA Astrophysics Data System (ADS)

Haake, John M.; Zediker, Mark S.

2004-06-01

Direct diode laser will become much more prevalent in the solar system of manufacturing due to their high efficiency, small portable size, unique beam profiles, and low ownership costs. There has been many novel applications described for high power direct diode laser [HPDDL] systems but few have been implemented in extreme production environments due to diode and diode system reliability. We discuss several novel applications in which the HPDDL have been implemented and proven reliable and cost-effective in production environments. These applications are laser hardening/surface modification, laser wire feed welding and laser paint stripping. Each of these applications uniquely tests the direct diode laser systems capabilities and confirms their reliability in production environments. A comparison of the advantages direct diode laser versus traditional industrial lasers such as CO2 and Nd:YAG and non-laser technologies such a RF induction, and MIG welders for each of these production applications is presented.

FY2005 Progress Summary and FY2006 Program Plan Statement of Work and Deliverables for Development of High Average Power Diode-Pumped Solid State Lasers, and Complementary Technologies, for Applications in Energy and Defense

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ebbers, C

The primary focus this year was to operate the system with two amplifiers populated with and pumped by eight high power diode arrays. The system was operated for extended run periods which enabled average power testing of components, diagnostics, and controls. These tests were highly successful, with a demonstrated energy level of over 55 joules for 4 cumulative hours at a repetition rate of 10 Hz (average power 0.55 kW). In addition, high average power second harmonic generation was demonstrated, achieving 227 W of 523.5 nm light (22.7 J, 10 Hz, 15 ns, 30 minutes) Plans to achieve higher energymore » levels and average powers are in progress. The dual amplifier system utilizes a 4-pass optical arrangement. The Yb:S-FAP slabs were mounted in aerodynamic aluminum vane structures to allow turbulent helium gas flow across the faces. Diagnostic packages that monitored beam performance were deployed during operation. The laser experiments involved injecting a seed beam from the front end into the system and making four passes through both amplifiers. Beam performance diagnostics monitored the beam on each pass to assess system parameters such as gain and nearfield intensity profiles. This year, an active mirror and wavefront sensor were procured and demonstrated in an off-line facility. The active mirror technology can correct for low order phase distortions at user specified operating conditions (such as repetition rates different than 10 Hz) and is a complementary technology to the static phase plates used in the system for higher order distortions. A picture of the laser system with amplifier No.2 (foreground) and amplifier No.1 (background) is shown in Fig. 1.0.1.1. The control system and diagnostics were recently enhanced for faster processing and allow remote operation of the system. The growth and fabrication of the Yb:S-FAP slabs constituted another major element of our program objectives. Our goal was to produce at least fourteen 4x6 cm2 crystalline slabs. These goals were met. Nine crystal boules were successfully grown to produce 14 slabs. In addition, we have prepared the way to scale the Yb:S-FAP crystals to the next growth diameter (10-inch diameter as opposed to 7-inch diameter). An outside contract was placed with Northrop-Grumman to scaleup the Yb:S-FAP crystal size. The following sections discuss the above accomplishments in more technical detail and are followed by plans and a budget request for FY2006.« less

Macro-channel cooled high power fiber coupled diode lasers exceeding 1.2kW of output power

NASA Astrophysics Data System (ADS)

Koenning, Tobias; Alegria, Kim; Wang, Zuolan; Segref, Armin; Stapleton, Dean; Faßbender, Wilhelm; Flament, Marco; Rotter, Karsten; Noeske, Axel; Biesenbach, Jens

2011-03-01

We report on a new series of fiber coupled diode laser modules exceeding 1.2kW of single wavelength optical power from a 400um / 0.2NA fiber. The units are constructed from passively cooled laser bars as opposed to other comparably powered, commercially available modules that use micro-channel heat-sinks. Micro-channel heat sinks require cooling water to meet demanding specifications and are therefore prone to failures due to contamination and increase the overall cost to operate and maintain the laser. Dilas' new series of high power fiber coupled diode lasers are designed to eliminate micro channel coolers and their associated failure mechanisms. Low-smile soldering processes were developed to maximize the brightness available from each diode laser bar. The diode laser brightness is optimally conserved using Dilas' recently developed propriety laser bar stacking geometry and optics. A total of 24 bars are coupled into a single fiber core using a polarization multiplexing scheme. The modular design permits further power scaling through wavelength multiplexing. Other customer critical features such as industrial grade fibers, pilot beams, fiber interlocks and power monitoring are standard features on these modules. The optical design and the beam parameter calculations will be presented to explain the inherit design trade offs. Results for single and dual wavelengths modules will be presented.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents

PubMed Central

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-01-01

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power POUT of 564 μW and a rectifier output voltage VRECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a POUT of 288 μW and a VRECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier. PMID:28422085

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents.

PubMed

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-04-19

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power P OUT of 564 μW and a rectifier output voltage V RECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a P OUT of 288 μW and a V RECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier.

Theoretical study on the thermal and optical features of a diode side-pumped alkali laser

NASA Astrophysics Data System (ADS)

Han, Juhong; Liu, Xiaoxu; Wang, Hongyuan; Cai, He; An, Guofei; Zhang, Wei; Wang, You

2018-03-01

As one of the most hopeful candidates to achieve high power performances, a diode-pumped alkali laser (DPAL) has attracted a lot of attention in the last decade. Comparing with a diode end-pumped alkali laser (DEPAL), a diode side-pumped alkali laser (DSPAL) has great potentiality to realize an even-higher output of alkali lasers. However, there are few related researching studies concern DSPAL. In this paper, we introduce a theoretical model to investigate the physical features of a double-directions side-pumped alkali laser. The distributions of the population density, temperature, and absorption power at the cross section of a vapor cell are systematically studied. The analyses should be valuable for design of a steady high-powered DPAL.

High-power fiber-coupled 100W visible spectrum diode lasers for display applications

NASA Astrophysics Data System (ADS)

Unger, Andreas; Küster, Matthias; Köhler, Bernd; Biesenbach, Jens

2013-02-01

Diode lasers in the blue and red spectral range are the most promising light sources for upcoming high-brightness digital projectors in cinemas and large venue displays. They combine improved efficiency, longer lifetime and a greatly improved color space compared to traditional xenon light sources. In this paper we report on high-power visible diode laser sources to serve the demands of this emerging market. A unique electro-optical platform enables scalable fiber coupled sources at 638 nm with an output power of up to 100 W from a 400 μm NA0.22 fiber. For the blue diode laser we demonstrate scalable sources from 5 W to 100 W from a 400 μm NA0.22 fiber.

Integrated injection-locked semiconductor diode laser

DOEpatents

Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1991-01-01

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

DOE PAGES

Liu, Bo; Braiman, Yehuda

2018-02-06

In this paper, we introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ~25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. Finally, we found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

NASA Astrophysics Data System (ADS)

Liu, Bo; Braiman, Yehuda

2018-05-01

We introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ∼25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. We found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Research and Development of Laser Diode Based Instruments for Applications in Space

NASA Technical Reports Server (NTRS)

Krainak, Michael; Abshire, James; Cornwell, Donald; Dragic, Peter; Duerksen, Gary; Switzer, Gregg

1999-01-01

Laser diode technology continues to advance at a very rapid rate due to commercial applications such as telecommunications and data storage. The advantages of laser diodes include, wide diversity of wavelengths, high efficiency, small size and weight and high reliability. Semiconductor and fiber optical-amplifiers permit efficient, high power master oscillator power amplifier (MOPA) transmitter systems. Laser diode systems which incorporate monolithic or discrete (fiber optic) gratings permit single frequency operation. We describe experimental and theoretical results of laser diode based instruments currently under development at NASA Goddard Space Flight Center including miniature lidars for measuring clouds and aerosols, water vapor and wind for Earth and planetary (Mars Lander) use.

High brightness laser-diode device emitting 160 watts from a 100 μm/NA 0.22 fiber.

PubMed

Yu, Junhong; Guo, Linui; Wu, Hualing; Wang, Zhao; Tan, Hao; Gao, Songxin; Wu, Deyong; Zhang, Kai

2015-11-10

A practical method of achieving a high-brightness and high-power fiber-coupled laser-diode device is demonstrated both by experiment and ZEMAX software simulation, which is obtained by a beam transformation system, free-space beam combining, and polarization beam combining based on a mini-bar laser-diode chip. Using this method, fiber-coupled laser-diode module output power from the multimode fiber with 100 μm core diameter and 0.22 numerical aperture (NA) could reach 174 W, with equalizing brightness of 14.2  MW/(cm2·sr). By this method, much wider applications of fiber-coupled laser-diodes are anticipated.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Bo; Braiman, Yehuda

In this paper, we introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ~25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. Finally, we found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Power-scaling performance of a three-dimensional tritium betavoltaic diode

NASA Astrophysics Data System (ADS)

Liu, Baojun; Chen, Kevin P.; Kherani, Nazir P.; Zukotynski, Stefan

2009-12-01

Three-dimensional diodes fabricated by electrochemical etching are exposed to tritium gas at pressures from 0.05 to 33 atm at room temperature to examine its power scaling performance. It is shown that the three-dimensional microporous structure overcomes the self-absorption limited saturation of beta flux at high tritium pressures. These results are contrasted against the three-dimensional device powered in one instance by tritium absorbed in the near surface region of the three-dimensional microporous network, and in another by a planar scandium tritide foil. These findings suggest that direct tritium occlusion in the near surface of three-dimensional diode can improve the specific power production.

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Goldstein, B.; Pultz, G. N.; Slavin, S. E.; Carlin, D. B.; Ettenberg, M.

1988-01-01

A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

Experimental study on parasitic mode suppression using FeSiAl in relativistic klystron amplifier

NASA Astrophysics Data System (ADS)

Zhang, Zehai

2015-03-01

Experimental study of parasitic mode suppression using electromagnetic attenuate material FeSiAl in an S-band Relativistic Klystron Amplifier (RKA) is presented in this paper. The FeSiAl powder is coated and sintered onto the inner surface of a drift tube which locates between the input and the middle cavity of the RKA. Cold tests show that the attenuate rate of the tube against parasitic mode TE11 is about 50%. Experiments carried out on the Torch-01 accelerator present that the tube is effective in suppressing the parasitic mode. Two typical outputs are obtained. When the diode voltage is on a moderate level, the RKA operates well and the parasitic mode is totally suppressed. The pulse length of the High Power Microwave (HPM) almost equals the electron beam pulse length and the HPM average output power is about 300 MW, with a power efficiency of 10%. When the diode voltage is on a higher level, the output power and efficiency rise but the parasitic mode oscillation occurred and the pulse length is shortened. By contrast, the parasitic mode oscillation is too strong for the RKA to operate normally with un-sintered drift tube. The experimental study implies that FeSiAl is effective in suppressing the parasitic mode oscillation in a certain extent. However, total suppression needs a deeper attenuate rate and further investigation.

Experimental study on parasitic mode suppression using FeSiAl in Relativistic Klystron Amplifier.

PubMed

Zhang, Zehai

2015-03-01

Experimental study of parasitic mode suppression using electromagnetic attenuate material FeSiAl in an S-band Relativistic Klystron Amplifier (RKA) is presented in this paper. The FeSiAl powder is coated and sintered onto the inner surface of a drift tube which locates between the input and the middle cavity of the RKA. Cold tests show that the attenuate rate of the tube against parasitic mode TE11 is about 50%. Experiments carried out on the Torch-01 accelerator present that the tube is effective in suppressing the parasitic mode. Two typical outputs are obtained. When the diode voltage is on a moderate level, the RKA operates well and the parasitic mode is totally suppressed. The pulse length of the High Power Microwave (HPM) almost equals the electron beam pulse length and the HPM average output power is about 300 MW, with a power efficiency of 10%. When the diode voltage is on a higher level, the output power and efficiency rise but the parasitic mode oscillation occurred and the pulse length is shortened. By contrast, the parasitic mode oscillation is too strong for the RKA to operate normally with un-sintered drift tube. The experimental study implies that FeSiAl is effective in suppressing the parasitic mode oscillation in a certain extent. However, total suppression needs a deeper attenuate rate and further investigation.

Laser diode and pumped Cr:Yag passively Q-switched yellow-green laser at 543 nm

NASA Astrophysics Data System (ADS)

Yao, Y.; Ling, Zhao; Li, B.; Qu, D. P.; Zhou, K.; Zhang, Y. B.; Zhao, Y.; Zheng, Q.

2013-03-01

Efficient and compact yellow green pulsed laser output at 543 nm is generated by frequency doubling of a passively Q-switched end diode-pumped Nd:YVO4 laser at 1086 nm under the condition of sup-pressing the higher gain transition near 1064 nm. With 15 W of diode pump power and the frequency doubling crystal LBO, as high as 1.58 W output power at 543 nm is achieved. The optical to optical conversion efficiency from the corresponding Q-switched fundamental output to the yellow green output is 49%. The peak power of the Q-switched yellow green pulse laser is up to 30 kW with 5 ns pulse duration. The output power stability over 8 hours is better than 2.56% at the maximum output power. To the best of our knowledge, this is the highest watt-level laser at 543 nm generated by frequency doubling of a passively Q-switched end diode pumped Nd:YVO4 laser at 1086 nm.

Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Xu, Ting-Ting; Wu, Di; Zhang, Yuan-Tao; Zhang, Bao-Lin; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores.Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07236k

16 W output power by high-efficient spectral beam combining of DBR-tapered diode lasers.

PubMed

Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-01-17

Up to 16 W output power has been obtained using spectral beam combining of two 1063 nm DBR-tapered diode lasers. Using a reflecting volume Bragg grating, a combining efficiency as high as 93.7% is achieved, resulting in a single beam with high spatial coherence. The result represents the highest output power achieved by spectral beam combining of two single element tapered diode lasers. Since spectral beam combining does not affect beam propagation parameters, M2-values of 1.8 (fast axis) and 3.3 (slow axis) match the M2-values of the laser with lowest spatial coherence. The principle of spectral beam combining used in our experiments can be expanded to combine more than two tapered diode lasers and hence it is expected that the output power may be increased even further in the future.

Performance of continuous wave and acousto-optically Q-switched Tm, Ho: YAP laser pumped by diode laser

NASA Astrophysics Data System (ADS)

Li, Guoxing; Xie, Wenqiang; Yang, Xining; Zhang, Ziqiu; Zhang, Hongda; Zhang, Liang

2018-02-01

A two-end-pumped a-cut Tm(0.5%), Ho(0.5%):YAP laser output at 2119nm is reported under cryogenic temperature. The maximum output power reached to 7.76W with the incident pump power of 24.2W in CW mode. With the acousto-optically Q-switch, an average power of 7.3W can be obtained, when the pulse repetition frequency was 7.5 kHz. The corresponding optical-to-optical conversion efficiency was 30.2% and the slope efficiency was 31.4%. Then, the laser output characteristics in the repetition frequency of 7.5 kHz and 10kHz were researched. The output power, the optical-to-optical conversion efficiency and slope efficiency were increased with the increase of the repetition frequency. In the same repetition frequency, the pulse duration was decreasing with the growth of the incident pump power.

High temperature semiconductor diode laser pumps for high energy laser applications

NASA Astrophysics Data System (ADS)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

High voltage-high power components for large space power distribution systems

NASA Technical Reports Server (NTRS)

Renz, D. D.

1984-01-01

Space power components including a family of bipolar power switching transistors, fast switching power diodes, heat pipe cooled high frequency transformers and inductors, high frequency conduction cooled transformers, high power-high frequency capacitors, remote power controllers and rotary power transfer devices were developed. Many of these components such as the power switching transistors, power diodes and the high frequency capacitor are commercially available. All the other components were developed to the prototype level. The dc/dc series resonant converters were built to the 25 kW level.

Next generation diode lasers with enhanced brightness

NASA Astrophysics Data System (ADS)

Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

2018-02-01

High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

Ion Diode Experiments on PBFA-X

NASA Astrophysics Data System (ADS)

Lockner, Thomas

1996-05-01

The PBFA-II pulsed power accelerator at Sandia National Laboratories has been modified to replace the radially focusing ion diode with an extraction ion diode. In the extraction diode mode (PBFA X) the ion beam is generated on the surface of an annular disk and extracted along the cylindrical axis. An additional magnetically insulated transmission line (MITL) has been installed to transmit power from the center to the bottom of the accelerator, where it drives a magnetically insulated extraction ion diode. The modification increases access to the diode and the diagnostics, permitting a higher shot rate, and allows us to study extraction diode technology at a power level near what is required for a high yield facility. The modification also includes reversing the polarity of the top half of the accelerator to permit operation at twice the previous source voltage. In the new configuration the diode could operate at 15 MV and 0.8 MA. This operating point is near the 30 MV, 1.0 MA operating point envisioned for one module of a high yield facility, and will allow the study of intense extraction ion diodes at power levels relevant to such a facility. Experimental results will be presented including MITL coupling studies, beam current density control, discharge cleaning of diode surfaces to reduce the presence of contaminant ions in the source beam, and the effect of anode substrate materials on the purity of the lithium beam. A comparison between predicted and measured radial beam profiles will also be presented, with the predicted profiles obtained from the ATHETA code that solves magnetostatics problems in two dimensions. This work was supported by the US/DOE under contract No. DE-AC04-94AL85000. +In collaboration with R. S. Coats, M. E. Cuneo, M. P. Desjarlias, D. J. Johnson, T. A. Mehlhorn, C. W. Mendel, Jr., P. Menge#, and W. J. Poukey,

Method and system for communicating with a laser power driver

DOEpatents

Telford, Steven

2017-07-18

A system for controlling a plurality of laser diodes includes an optical transmitter coupled to the laser diode driver for each laser diode. An optical signal including bi-phase encoded data is provided to each laser diode driver. The optical signal includes current level and pulse duration information at which each of the diodes is to be driven. Upon receiving a trigger signal, the laser diode drivers operate the laser diodes using the current level and pulse duration information to output a laser beam.

Diode step stress testing program for JANTX1N5550

NASA Technical Reports Server (NTRS)

1979-01-01

The effect was studied of power/temperature step stress when applied to the switching diode JANTX1N5550 manufactured by Semtech and Micro Semiconductor. The power/temperature stress tests are presented, and failure analyses are included.

Quasi-passive heat sink for high-power laser diodes

NASA Astrophysics Data System (ADS)

Vetrovec, John

2009-02-01

We report on a novel heat sink for high-power laser diodes offering unparalleled capacity in high-heat flux handling and temperature control. The heat sink uses a liquid coolant flowing at high speed in a miniature closed and sealed loop. Diode waste heat is received at high flux and transferred to environment, coolant fluid, heat pipe, or structure at a reduced flux. When pumping solid-state or alkali vapor lasers, diode wavelength can be electronically tuned to the absorption features of the laser gain medium. This paper presents the heat sink physics, engineering design, performance modeling, and configurations.

Coupling of high power laser diode optical power.

PubMed

Landry, M J; Rupert, J W; Mittas, A

1991-06-20

This paper describes the characteristics of optical couplers with high power laser diodes as sources. The couplers investigated include gradient-index (GRIN) lenses manufactured by Nippon Sheet Glass, a plano-convex lens, a prism, optical fibers manufactured by Ensign-Bickford and Nippon Sheet Glass, and fiber optic stub manufacture by Spec Tran. The characteristics measured included: (1) GRIN lens transmission of up to 97%, fiber transmission of up to 90%, plano-convex lens transmission of up to 92%; (2) intensity distribution contours and profiles of the beam transmitted through GRIN lenses and optical fibers; (3) the beam dimensions of a collimating system; and (4) the divergence of optical fibers of varying lengths. Spectra Diode Laboratory and McDonnell Astronautics Company/Opto Electronics Center manufactured the laser diodes sources that emitted up to 3.6 W.

Thermal investigation on high power dfb broad area lasers at 975 nm, with 60% efficiency

NASA Astrophysics Data System (ADS)

Mostallino, R.; Garcia, M.; Deshayes, Y.; Larrue, A.; Robert, Y.; Vinet, E.; Bechou, L.; Lecomte, M.; Parillaud, O.; Krakowski, M.

2016-03-01

The demand of high power diode lasers in the range of 910-980nm is regularly growing. This kind of device for many applications, such as fiber laser pumping [1], material processing [1], solid-state laser pumping [1], defense and medical/dental. The key role of this device lies in the efficiency (𝜂𝐸) of converting input electrical power into output optical power. The high value of 𝜂𝐸 allows high power level and reduces the need in heat dissipation. The requirement of wavelength stabilization with temperature is more obvious in the case of multimode 975nm diode lasers used for pumping Yb, Er and Yb/Er co-doped solid-state lasers, due to the narrow absorption line close to this wavelength. Such spectral width property (<1 nm), combined with wavelength thermal stabilization (0.07 𝑛𝑚 • °𝐶-1), provided by a uniform distributed feedback grating (DFB) introduced by etching and re-growth process techniques, is achievable in high power diode lasers using optical feedback. This paper reports on the development of the diode laser structure and the process techniques required to write the gratings taking into account of the thermal dissipation and optical performances. Performances are particularly determined in terms of experimental electro-optical characterizations. One of the main objectives is to determine the thermal resistance of the complete assembly to ensure the mastering of the diode laser temperature for operating condition. The classical approach to determine junction temperature is based on the infrared thermal camera, the spectral measurement and the pulse electrical method. In our case, we base our measurement on the spectral measurement but this approach is not well adapted to the high power diodes laser studied. We develop a new measurement based on the pulse electrical method and using the T3STERequipment. This method is well known for electronic devices and LEDs but is weakly developed for the high power diodes laser. This crucial measurement compared to spectral one is critical for understand the thermal management of diode laser device and improve the structure based on design for reliability. To have a perfect relation between structure, and their modification, and temperature, FEM simulations are performed using COMSOL software. In this case, we can understand the impact of structure on the isothermal distribution and then reveal the sensitive zones in the diode laser. To validate the simulation, we compare the simulation results to the experimental one and develop an analytical model to determine the different contributions of the thermal heating. This paper reports on the development laser structure and the process techniques required to write the gratings. Performances are particularly characterized in terms of experimental electro-optical characterization and spectral response. The extraction of thermal resistance (Rth) is particularly difficult, because of the implicit low value (Rth ≈ 2𝐾/𝑊) and the multimodal nature of the diode laser. In such a context, thermal resistance has been measured using a dedicated equipment namely T3STER©. The results have been compared with those given by the well-known technique achieved from the spectrum of the diode laser (central wavelength variations vs temperature) that is more difficult to apply for multimodal diodes laser. The last section deals with thermal simulations based on finite elements method (FEM) modeling in order to estimate junction temperature . This study represent a significant part of the general Design for Reliability (DfR) effort carried out on such devices to produce efficient and reliable high power devices at the industrial level.

Thermal resistance of etched-pillar vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Wipiejewski, Torsten; Peters, Matthew G.; Young, D. Bruce; Thibeault, Brian; Fish, Gregory A.; Coldren, Larry A.

1996-03-01

We discuss our measurements on thermal impedance and thermal crosstalk of etched-pillar vertical-cavity lasers and laser arrays. The average thermal conductivity of AlAs-GaAs Bragg reflectors is estimated to be 0.28 W/(cmK) and 0.35W/(cmK) for the transverse and lateral direction, respectively. Lasers with a Au-plated heat spreading layer exhibit a 50% lower thermal impedance compared to standard etched-pillar devices resulting in a significant increase of maximum output power. For an unmounted laser of 64 micrometer diameter we obtain an improvement in output power from 20 mW to 42 mW. The experimental results are compared with a simple analytical model showing the importance of heat sinking for maximizing the output power of vertical-cavity lasers.

The LIFE Laser Design in Context: A Comparison to the State-of-the-Art

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deri, R J; Bayramian, A J; Erlandson, A C

2011-03-21

The current point design for the LIFE laser leverages decades of solid-state laser development in order to achieve the performance and attributes required for inertial fusion energy. This document provides a brief comparison of the LIFE laser point design to other state-of-the-art solid-state lasers. Table I compares the attributes of the current LIFE laser point design to other systems. the state-of-the-art for single-shot performance at fusion-relevant beamline energies is exemplified by performance observed on the National Ignition Facility. The state-of-the-art for high average power is exemplified by the Northrup Grumman JHPSSL laser. Several items in Table I deal with themore » laser efficiency; a more detailed discussion of efficiency can be found in reference 5. The electrical-to-optical efficiency of the LIFE design exceeds that of reference 4 due to the availability of higher efficiency laser diode pumps (70% vs. {approx}50% used in reference 4). LIFE diode pumps are discussed in greater detail in reference 6. The 'beam steering' state of the art is represented by the deflection device that will be used in the LIFE laser, not a laser system. Inspection of Table I shows that most LIFE laser attributes have already been experimentally demonstrated. The two cases where the LIFE design is somewhat better than prior experimental work do not involve the development of new concepts: beamline power is increased simply by increasing aperture (as demonstrated by the power/aperture comparison in Table I), and efficiency increases are achieved by employing state-of-the-art diode pumps. In conclusion, the attributes anticipated for the LIFE laser are consistent with the demonstrated performance of existing solid-state lasers.« less

Inelastic tunnel diodes

NASA Technical Reports Server (NTRS)

Anderson, L. M. (Inventor)

1984-01-01

Power is extracted from plasmons, photons, or other guided electromagnetic waves at infrared to midultraviolet frequencies by inelastic tunneling in metal-insulator-semiconductor-metal diodes. Inelastic tunneling produces power by absorbing plasmons to pump electrons to higher potential. Specifically, an electron from a semiconductor layer absorbs a plasmon and simultaneously tunnels across an insulator into metal layer which is at higher potential. The diode voltage determines the fraction of energy extracted from the plasmons; any excess is lost to heat.

High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array

DOEpatents

Freitas, Barry L.

1998-01-01

An optically corrected, micro-channel cooled, high density laser diode array achieves stacking pitches to 33 bars/cm by mounting laser diodes into V-shaped grooves. This design will deliver>4kW/cm2 of directional pulsed laser power. This optically corrected, micro-channel cooled, high density laser is usable in all solid state laser systems which require efficient, directional, narrow bandwidth, high optical power density pump sources.

kW-class diode laser bars

NASA Astrophysics Data System (ADS)

Strohmaier, S. G.; Erbert, G.; Meissner-Schenk, A. H.; Lommel, M.; Schmidt, B.; Kaul, T.; Karow, M.; Crump, P.

2017-02-01

Progress will be presented on ongoing research into the development of ultra-high power and efficiency bars achieving significantly higher output power, conversion efficiency and brightness than currently commercially available. We combine advanced InAlGaAs/GaAs-based epitaxial structures and novel lateral designs, new materials and superior cooling architectures to enable improved performance. Specifically, we present progress in kilowatt-class 10-mm diode laser bars, where recent studies have demonstrated 880 W continuous wave output power from a 10 mm x 4 mm laser diode bar at 850 A of electrical current and 15°C water temperature. This laser achieves < 60% electro-optical efficiency at 880 W CW output power.

Integrated injection-locked semiconductor diode laser

DOEpatents

Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

1991-02-19

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

High-power diode laser versus electrocautery surgery on human papillomavirus lesion treatment.

PubMed

Baeder, Fernando Martins; Santos, Maria Teresa Botti R; Pelino, Jose Eduardo Pelizon; Duarte, Danilo Antonio; Genovese, Walter Joao

2012-05-01

The use of high-power lasers has facilitated and improved human papillomavirus (HPV) treatment protocols and has also become very popular in recent years. This application has been more frequently used in hospitals, especially in gynecology. The present study aimed to evaluate the effects of high-power diode laser to remove oral lesions caused by HPV and the consequent effects on virus load following the wound tissue healing process compared with one of the most conventional surgical techniques involving electrocautery. Surgeries were performed on 5 patients who had 2 distinct lesions caused by HPV. All patients were submitted to both electrocautery and high-power diode laser. Following a 20-day period, when the area was healed, sample material was collected through curettage for virus load quantitative analysis.Observation verified the presence of virus in all the samples; however, surgeries performed with the laser also revealed a significant reduction in virus load per cell compared with those performed with electrocautery. The ease when handling the diode laser, because of the flexibility of its fibers and precision of its energy delivery system, provides high-accuracy surgery, which facilitates the treatment of large and/or multifocal lesions. The use of high-power diode laser is more effective in treatment protocols of lesions caused by HPV.

Study on constant-step stress accelerated life tests in white organic light-emitting diodes.

PubMed

Zhang, J P; Liu, C; Chen, X; Cheng, G L; Zhou, A X

2014-11-01

In order to obtain reliability information for a white organic light-emitting diode (OLED), two constant and one step stress tests were conducted with its working current increased. The Weibull function was applied to describe the OLED life distribution, and the maximum likelihood estimation (MLE) and its iterative flow chart were used to calculate shape and scale parameters. Furthermore, the accelerated life equation was determined using the least squares method, a Kolmogorov-Smirnov test was performed to assess if the white OLED life follows a Weibull distribution, and self-developed software was used to predict the average and the median lifetimes of the OLED. The numerical results indicate that white OLED life conforms to a Weibull distribution, and that the accelerated life equation completely satisfies the inverse power law. The estimated life of a white OLED may provide significant guidelines for its manufacturers and customers. Copyright © 2014 John Wiley & Sons, Ltd.

Passive mode-locking of 3.25μm GaSb-based type-I quantum-well cascade diode lasers

NASA Astrophysics Data System (ADS)

Feng, Tao; Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi; Wang, Meng; Belenky, Gregory

2018-02-01

Passively mode-locked type-I quantum well cascade diode lasers emitting in the methane absorption band near 3.25 μm were designed, fabricated and characterized. The deep etched 5.5-μm-wide single spatial mode ridge waveguide design utilizing split-contact architecture was implemented. The devices with absorber to gain section length ratios of 11% and 5.5% were studied. Lasers with the longer absorber section ( 300 μm) generated smooth bell-shape-like emission spectrum with about 30 lasing modes at full-width-at-half-maximum level. Devices with reverse biased absorber section demonstrated stable radio frequency beat with nearly perfect Lorentzian shape over four orders of magnitude of intensity. The estimated pulse-to-pulse timing jitter was about 110 fs/cycle. Laser generated average power of more than 1 mW in mode-locked regime.

The effect of low-level laser irradiation on dog spermatozoa motility is dependent on laser output power.

PubMed

Corral-Baqués, M I; Rivera, M M; Rigau, T; Rodríguez-Gil, J E; Rigau, J

2009-09-01

Biological tissues respond to low-level laser irradiation and so do dog spermatozoa. Among the main parameters to be considered when a biological tissue is irradiated is the output power. We have studied the effects on sperm motility of 655 nm continuous wave diode laser irradiation at different output powers with 3.34 J (5.97 J/cm(2)). The second fraction of fresh dog sperm was divided into five groups: control, and four to be irradiated with an average output power of 6.8 mW, 15.4 mW, 33.1 mW and 49.7 mW, respectively. At 0 min and 45 min after irradiation, pictures were taken and a computer aided sperm analysis (CASA) performed to analyse different motility parameters. The results showed that different output powers affected dog semen motility parameters differently. The highest output power showed the most intense effects. Significant changes in the structure of the motile sperm subpopulation were linked to the different output powers used.

Teradiode's high brightness semiconductor lasers

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

2016-03-01

TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, <0.08 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. Our TeraBlade industrial platform achieves world-record brightness levels for direct diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

High-power diode laser modules from 410 nm to 2200 nm

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Kissel, Heiko; Flament, Marco; Wolf, Paul; Brand, Thomas; Biesenbach, Jens

2010-02-01

In this work we report on high-power diode laser modules covering a wide spectral range from 410 nm to 2200 nm. Driven by improvements in the technology of diode laser bars with non-standard wavelengths, such systems are finding a growing number of applications. Fields of application that benefit from these developments are direct medical applications, printing industry, defense technology, polymer welding and pumping of solid-sate lasers. Diode laser bars with standard wavelengths from 800 - 1000 nm are based on InGaAlAs, InGaAlP, GaAsP or InGaAs semiconductor material with an optical power of more than 100 W per bar. For shorter wavelengths from 630 - 690 nm InGaAlP semiconductor material is used with an optical power of about 5 W per bar. Extending the wavelength range beyond 1100 nm is realized by using InGaAs on InP substrates or with InAs quantum dots embedded in GaAs for wavelengths up to 1320 nm and (AlGaIn)(AsSb) for wavelengths up to 2200 nm. In these wavelength ranges the output power per bar is about 6 - 20 W. In this paper we present a detailed characterization of these diode laser bars, including measurements of power, spectral data and life time data. In addition, we will show different fiber coupled modules, ranging from 638 nm with 13 W output power (400 μm fiber, NA 0.22) up to 1940 nm with more than 50 W output power (600 μm fiber NA 0.22).

30 CFR 18.50 - Protection against external arcs and sparks.

Code of Federal Regulations, 2014 CFR

2014-07-01

... volts. (c) A device(s) such as a diode(s) of adequate peak inverse voltage rating and current-carrying capacity to conduct possible fault current through the grounded power conductor. Diode installations shall include: (1) An overcurrent device in series with the diode, the contacts of which are in the machine's...

30 CFR 18.50 - Protection against external arcs and sparks.

Code of Federal Regulations, 2013 CFR

2013-07-01

... volts. (c) A device(s) such as a diode(s) of adequate peak inverse voltage rating and current-carrying capacity to conduct possible fault current through the grounded power conductor. Diode installations shall include: (1) An overcurrent device in series with the diode, the contacts of which are in the machine's...

30 CFR 18.50 - Protection against external arcs and sparks.

Code of Federal Regulations, 2012 CFR

2012-07-01

... volts. (c) A device(s) such as a diode(s) of adequate peak inverse voltage rating and current-carrying capacity to conduct possible fault current through the grounded power conductor. Diode installations shall include: (1) An overcurrent device in series with the diode, the contacts of which are in the machine's...

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

NASA Technical Reports Server (NTRS)

Eegholm, Niels; Ott, Melanie; Stephen, Mark; Leidecker, Henning

2005-01-01

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to 50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at 50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths 10-200 (mu)s and with repetition rates of 10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Reliability of High Power Laser Diode Arrays Operating in Long Pulse Mode

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Barnes, Bruce W.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.; Baker, Nathaniel R.

2006-01-01

Reliability and lifetime of quasi-CW laser diode arrays are greatly influenced by their thermal characteristics. This paper examines the thermal properties of laser diode arrays operating in long pulse duration regime.

760nm: a new laser diode wavelength for hair removal modules

NASA Astrophysics Data System (ADS)

Wölz, Martin; Zorn, Martin; Pietrzak, Agnieszka; Kindsvater, Alex; Meusel, Jens; Hülsewede, Ralf; Sebastian, Jürgen

2015-02-01

A new high-power semiconductor laser diode module, emitting at 760 nm is introduced. This wavelength permits optimum treatment results for fair skin individuals, as demonstrated by the use of Alexandrite lasers in dermatology. Hair removal applications benefit from the industry-standard diode laser design utilizing highly efficient, portable and light-weight construction. We show the performance of a tap-water-cooled encapsulated laser diode stack with a window for use in dermatological hand-pieces. The stack design takes into account the pulse lengths required for selectivity in heating the hair follicle vs. the skin. Super-long pulse durations place the hair removal laser between industry-standard CW and QCW applications. The new 760 nm laser diode bars are 30% fill factor devices with 1.5 mm long resonator cavities. At CW operation, these units provide 40 W of optical power at 43 A with wall-plug-efficiency greater than 50%. The maximum output power before COMD is 90 W. Lifetime measurements starting at 40 W show an optical power loss of 20% after about 3000 h. The hair removal modules are available in 1x3, 1x8 and 2x8 bar configurations.

Frequency stabilization of diode-laser-pumped solid state lasers

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1988-01-01

The goal of the NASA Sunlite program is to fly two diode-laser-pumped solid-state lasers on the space shuttle and while doing so to perform a measurement of their frequency stability and temporal coherence. These measurements will be made by combining the outputs of the two lasers on an optical radiation detector and spectrally analyzing the beat note. Diode-laser-pumped solid-state lasers have several characteristics that will make them useful in space borne experiments. First, this laser has high electrical efficiency. Second, it is of a technology that enables scaling to higher powers in the future. Third, the laser can be made extremely reliable, which is crucial for many space based applications. Fourth, they are frequency and amplitude stable and have high temporal coherence. Diode-laser-pumped solid-state lasers are inherently efficient. Recent results have shown 59 percent slope efficiency for a diode-laser-pumped solid-state laser. As for reliability, the laser proposed should be capable of continuous operation. This is possible because the diode lasers can be remote from the solid state gain medium by coupling through optical fibers. Diode lasers are constructed with optical detectors for monitoring their output power built into their mounting case. A computer can actively monitor the output of each diode laser. If it sees any variation in the output power that might indicate a problem, the computer can turn off that diode laser and turn on a backup diode laser. As for stability requirements, it is now generally believed that any laser can be stabilized if the laser has a frequency actuator capable of tuning the laser frequency as far as it is likely to drift in a measurement time.

A two-stage series diode for intense large-area moderate pulsed X rays production.

PubMed

Lai, Dingguo; Qiu, Mengtong; Xu, Qifu; Su, Zhaofeng; Li, Mo; Ren, Shuqing; Huang, Zhongliang

2017-01-01

This paper presents a method for moderate pulsed X rays produced by a series diode, which can be driven by high voltage pulse to generate intense large-area uniform sub-100-keV X rays. A two stage series diode was designed for Flash-II accelerator and experimentally investigated. A compact support system of floating converter/cathode was invented, the extra cathode is floating electrically and mechanically, by withdrawing three support pins several milliseconds before a diode electrical pulse. A double ring cathode was developed to improve the surface electric field and emission stability. The cathode radii and diode separation gap were optimized to enhance the uniformity of X rays and coincidence of the two diode voltages based on the simulation and theoretical calculation. The experimental results show that the two stage series diode can work stably under 700 kV and 300 kA, the average energy of X rays is 86 keV, and the dose is about 296 rad(Si) over 615 cm 2 area with uniformity 2:1 at 5 cm from the last converter. Compared with the single diode, the average X rays' energy reduces from 132 keV to 88 keV, and the proportion of sub-100-keV photons increases from 39% to 69%.

High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array

DOEpatents

Freitas, B.L.

1998-10-27

An optically corrected, micro-channel cooled, high density laser diode array achieves stacking pitches to 33 bars/cm by mounting laser diodes into V-shaped grooves. This design will deliver > 4kW/cm{sup 2} of directional pulsed laser power. This optically corrected, micro-channel cooled, high density laser is usable in all solid state laser systems which require efficient, directional, narrow bandwidth, high optical power density pump sources. 13 figs.

Laser-Powered Thrusters for High Efficiency Variable Specific Impulse Missions (Preprint)

DTIC Science & Technology

2007-04-10

technology. However, a laser-ablation propulsion engine using a set of diode-pumped glass fiber amplifiers with a total of 350-W optical power can...in a single device using low-mass diode-pumped glass fiber laser amplifiers to operate in either long- or short-pulse regimes at will. Adequate fiber...pulsewidth glass fiber oscillator-amplifiers, rather than the diodes used in the µ LPT, to achieve Table 2. Demonstrated technology basis Ablation Fuel Gold

Temperature evaluation of dental implant surface irradiated with high-power diode laser.

PubMed

Rios, F G; Viana, E R; Ribeiro, G M; González, J C; Abelenda, A; Peruzzo, D C

2016-09-01

The prevalence of peri-implantitis and the absence of a standard approach for decontamination of the dental implant surface have led to searches for effective therapies. Since the source of diode lasers is portable, has reduced cost, and does not cause damage to the titanium surface of the implant, high-power diode lasers have been used for this purpose. The effect of laser irradiation on the implants is the elevation of the temperature surface. If this elevation exceeds 47 °C, the bone tissue is irreversibly damaged, so for a safety therapy, the laser parameters should be controlled. In this study, a diode laser of GaAsAl was used to irradiate titanium dental implants, for powers 1.32 to 2.64 W (real) or 2.00 to 4.00 W (nominal), in continuous/pulsed mode DC/AC, with exposure time of 5/10 s, with/without air flow for cooling. The elevation of the temperature was monitored in real time in two positions: cervical and apical. The best results for decontamination using a 968-nm diode laser were obtained for a power of 1.65 and 1.98 W (real) for 10 s, in DC or AC mode, with an air flow of 2.5 l/min. In our perspective in this article, we determine a suggested approach for decontamination of the dental implant surface using a 968-nm diode laser.

Integrated RGB laser light module for autostereoscopic outdoor displays

NASA Astrophysics Data System (ADS)

Reitterer, Jörg; Fidler, Franz; Hambeck, Christian; Saint Julien-Wallsee, Ferdinand; Najda, Stephen; Perlin, Piotr; Stanczyk, Szymon; Czernecki, Robert; McDougall, Stewart D.; Meredith, Wyn; Vickers, Garrie; Landles, Kennedy; Schmid, Ulrich

2015-02-01

We have developed highly compact RGB laser light modules to be used as light sources in multi-view autostereoscopic outdoor displays and projection devices. Each light module consists of an AlGaInP red laser diode, a GaInN blue laser diode, a GaInN green laser diode, as well as a common cylindrical microlens. The plano-convex microlens is a so-called "fast axis collimator", which is widely used for collimating light beams emitted from high-power laser diode bars, and has been optimized for polychromatic RGB laser diodes. The three light beams emitted from the red, green, and blue laser diodes are collimated in only one transverse direction, the so-called "fast axis", and in the orthogonal direction, the so-called "slow axis", the beams pass the microlens uncollimated. In the far field of the integrated RGB light module this produces Gaussian beams with a large ellipticity which are required, e.g., for the application in autostereoscopic outdoor displays. For this application only very low optical output powers of a few milliwatts per laser diode are required and therefore we have developed tailored low-power laser diode chips with short cavity lengths of 250 μm for red and 300 μm for blue. Our RGB laser light module including the three laser diode chips, associated monitor photodiodes, the common microlens, as well as the hermetically sealed package has a total volume of only 0.45 cm³, which to our knowledge is the smallest RGB laser light source to date.

Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

NASA Astrophysics Data System (ADS)

Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

2018-02-01

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications <1 um smile and >96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

InGaP alpha voltaic batteries: Synthesis, modeling, and radiation tolerance

NASA Astrophysics Data System (ADS)

Cress, Cory D.; Landi, Brian J.; Raffaelle, Ryne P.; Wilt, David M.

2006-12-01

The viability of InGaP diodes coupled with α-particle sources as radioisotope power supplies is investigated both theoretically and experimentally. The electrical power output of epitaxially grown InGaP p-type/n-type (p/n) junction diodes coupled with Am241 and Po210 α-particle sources was measured. A theoretical model was developed that determines the α-particle energy deposition profile within an InGaP diode when irradiated by an omnidirectional α-particle source. The results of the model illustrate the dramatic influence the radiation source/diode configuration has on the α-particle energy deposition profile within a device. Progress has been shown towards increasing the radiation tolerance of the InGaP devices, which included utilizing an intrinsic region and reducing the junction thickness. Introduction of the intrinsic region within a conventional n /p diode to form a n-type/intrinsic/p-type diode enabled the device to withstand a ten times greater fluence of 4.2MeV α particles before decreasing to 50% of its original power output under simulated air mass zero illumination, when compared to an abrupt junction device with the same active region thickness.

Gigahertz frequency comb from a diode-pumped solid-state laser.

PubMed

Klenner, Alexander; Schilt, Stéphane; Südmeyer, Thomas; Keller, Ursula

2014-12-15

We present the first stabilization of the frequency comb offset from a diode-pumped gigahertz solid-state laser oscillator. No additional external amplification and/or compression of the output pulses is required. The laser is reliably modelocked using a SESAM and is based on a diode-pumped Yb:CALGO gain crystal. It generates 1.7-W average output power and pulse durations as short as 64 fs at a pulse repetition rate of 1 GHz. We generate an octave-spanning supercontinuum in a highly nonlinear fiber and use the standard f-to-2f carrier-envelope offset (CEO) frequency f_CEO detection method. As a pump source, we use a reliable and cost-efficient commercial diode laser. Its multi-spatial-mode beam profile leads to a relatively broad frequency comb offset beat signal, which nevertheless can be phase-locked by feedback to its current. Using improved electronics, we reached a feedback-loop-bandwidth of up to 300 kHz. A combination of digital and analog electronics is used to achieve a tight phase-lock of f_CEO to an external microwave reference with a low in-loop residual integrated phase-noise of 744 mrad in an integration bandwidth of [1 Hz, 5 MHz]. An analysis of the laser noise and response functions is presented which gives detailed insights into the CEO stabilization of this frequency comb.

Diode step stress program, JANTX1N5614

NASA Technical Reports Server (NTRS)

1978-01-01

The reliability of switching diode JANTX1N5614 was tested. The effect of power/temperature step stress on the diode was determined. Control sample units were maintained for verification of the electrical parametric testing. Results are reported.

High average power, diode pumped petawatt laser systems: a new generation of lasers enabling precision science and commercial applications

NASA Astrophysics Data System (ADS)

Haefner, C. L.; Bayramian, A.; Betts, S.; Bopp, R.; Buck, S.; Cupal, J.; Drouin, M.; Erlandson, A.; Horáček, J.; Horner, J.; Jarboe, J.; Kasl, K.; Kim, D.; Koh, E.; Koubíková, L.; Maranville, W.; Marshall, C.; Mason, D.; Menapace, J.; Miller, P.; Mazurek, P.; Naylon, A.; Novák, J.; Peceli, D.; Rosso, P.; Schaffers, K.; Sistrunk, E.; Smith, D.; Spinka, T.; Stanley, J.; Steele, R.; Stolz, C.; Suratwala, T.; Telford, S.; Thoma, J.; VanBlarcom, D.; Weiss, J.; Wegner, P.

2017-05-01

Large laser systems that deliver optical pulses with peak powers exceeding one Petawatt (PW) have been constructed at dozens of research facilities worldwide and have fostered research in High-Energy-Density (HED) Science, High-Field and nonlinear physics [1]. Furthermore, the high intensities exceeding 1018W/cm2 allow for efficiently driving secondary sources that inherit some of the properties of the laser pulse, e.g. pulse duration, spatial and/or divergence characteristics. In the intervening decades since that first PW laser, single-shot proof-of-principle experiments have been successful in demonstrating new high-intensity laser-matter interactions and subsequent secondary particle and photon sources. These secondary sources include generation and acceleration of charged-particle (electron, proton, ion) and neutron beams, and x-ray and gamma-ray sources, generation of radioisotopes for positron emission tomography (PET), targeted cancer therapy, medical imaging, and the transmutation of radioactive waste [2, 3]. Each of these promising applications requires lasers with peak power of hundreds of terawatt (TW) to petawatt (PW) and with average power of tens to hundreds of kW to achieve the required secondary source flux.

Compact 151 W green laser with U-type resonator for prostate surgery

NASA Astrophysics Data System (ADS)

Bazyar, Hossein; Aghaie, Mohammad; Daemi, Mohammad Hossein; Bagherzadeh, Seyed Morteza

2013-04-01

We analyzed, designed and fabricated a U-type resonator for intra-cavity frequency doubling of a diode-side-pumped Q-switched Nd:YAG rod laser with high power and high stability for surgery of prostatic tissue. The resonator stability conditions were analyzed graphically in the various configurations for a U-type resonator. We obtained green light at 532 nm using a single KTP crystal, with average output power of 151 W at 10 kHz repetition rate, and with 113 ns pulse duration at 810 W input pump power. We achieved 1064-532 nm conversion efficiency of 75.8%, and pump-to-green optical-optical efficiency of 18.6%. The green power fluctuation was ±1.0% and pointing stability was better than 4 μrad. The green laser output was coupled to a side-firing medical fiber to transfer the laser beam to the prostatic tissue.

High brightness diode lasers controlled by volume Bragg gratings

NASA Astrophysics Data System (ADS)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

Bactericidal effects of a high-power, red light-emitting diode on two periodontopathic bacteria in antimicrobial photodynamic therapy in vitro.

PubMed

Umeda, Makoto; Tsuno, Akiko; Okagami, Yoshihide; Tsuchiya, Fumito; Izumi, Yuichi; Ishikawa, Isao

2011-11-01

  Light-emitting diodes have been investigated as new light activators for photodynamic therapy. We investigated the bactericidal effects of high-power, red light-emitting diodes on two periodontopathic bacteria in vitro.   A light-emitting diode (intensity: 1100 mW/cm(2) , peak wavelength: 650 nm) was used to irradiate a bacterial solution for either 10 or 20 s. Bacterial solutions (Porphyromonas gingivalis or Aggregatibacter actinomycetemcomitans) at a concentration of 2.5 × 10(6) c.f.u./mL were mixed with an equal volume of either methylene blue or toluidine blue O (0-20 μg/mL) and added to titer plate wells. The plate wells were irradiated with red light-emitting diode light from a distance of 22 or 40 mm. The contents were diluted, and 50 μL was smeared onto blood agar plates. After 1 week of culturing, bacterial c.f.u. were counted.   The light-emitting diode energy density was estimated to be approximately 4 and 8 J/cm(2) after 10 and 20 s of irradiation, respectively. Red light-emitting diode irradiation for 10 s from a distance of 22 mm, combined with methylene blue at concentrations >10 μg/mL, completely killed Porphyromonas gingivalis and Aggregatibacter actinomycetemcomitans.   High-power, red light-emitting diode irradiation with a low concentration of dye showed effective bactericidal effects against two periodontopathic bacteria. © 2011 Blackwell Publishing Asia Pty Ltd.

Efficient, frequency-stable laser-diode-pumped Nd:YAG laser

NASA Technical Reports Server (NTRS)

Zhou, B.; Kane, T. J.; Dixon, G. J.; Byer, R. L.

1985-01-01

One of the main goals of the study was to demonstrate a low-power efficient Nd:YAG laser oscillator for applications in remote coherent Doppler anemometry. An electrical-to-optical slope efficiency of 6.5 percent has been achieved by using commercially available CW laser diodes of up to 100 mW to pump monolithic Nd:YAG rod lasers. The observed Nd:YAG oscillation threshold is at 2.3 mW of laser-diode output power, i.e., a small fraction of the rated output power. The highest Nd:YAG CW output power reached is 4.4 mW at an overall electrical-to-optical efficiency of 1.5 percent. The frequency jitter is less than 10 kHz in 0.3 s.

Power subsystem performance prediction /PSPP/ computer program.

NASA Technical Reports Server (NTRS)

Weiner, H.; Weinstein, S.

1972-01-01

A computer program which simulates the operation of the Viking Orbiter Power Subsystem has been developed. The program simulates the characteristics and interactions of a solar array, battery, battery charge controls, zener diodes, power conditioning equipment, and the battery spacecraft and zener diode-spacecraft thermal interfaces. This program has been used to examine the operation of the Orbiter power subsystem during critical phases of the Viking mission - from launch, through midcourse maneuvers, Mars orbital insertion, orbital trims, Lander separation, solar occultations and unattended operation - until the end of the mission. A typical computer run for the first 24 hours after launch is presented which shows the variations in solar array, zener diode, battery charger, batteries and user load characteristics during this period.

Analysis on IGBT and Diode Failures in Distribution Electronic Power Transformers

NASA Astrophysics Data System (ADS)

Wang, Si-cong; Sang, Zi-xia; Yan, Jiong; Du, Zhi; Huang, Jia-qi; Chen, Zhu

2018-02-01

Fault characteristics of power electronic components are of great importance for a power electronic device, and are of extraordinary importance for those applied in power system. The topology structures and control method of Distribution Electronic Power Transformer (D-EPT) are introduced, and an exploration on fault types and fault characteristics for the IGBT and diode failures is presented. The analysis and simulation of different fault types for the fault characteristics lead to the D-EPT fault location scheme.

Video semaphore decoding for free-space optical communication

NASA Astrophysics Data System (ADS)

Last, Matthew; Fisher, Brian; Ezekwe, Chinwuba; Hubert, Sean M.; Patel, Sheetal; Hollar, Seth; Leibowitz, Brian S.; Pister, Kristofer S. J.

2001-04-01

Using teal-time image processing we have demonstrated a low bit-rate free-space optical communication system at a range of more than 20km with an average optical transmission power of less than 2mW. The transmitter is an autonomous one cubic inch microprocessor-controlled sensor node with a laser diode output. The receiver is a standard CCD camera with a 1-inch aperture lens, and both hardware and software implementations of the video semaphore decoding algorithm. With this system sensor data can be reliably transmitted 21 km form San Francisco to Berkeley.

Theoretical analysis of AlGaN/GaN resonant tunnelling diodes with step heterojunctions spacer and sub-quantum well

NASA Astrophysics Data System (ADS)

Liu, Y.; Gao, B.; Gong, M.

2017-06-01

In this paper, we proposed to use step heterojunctions emitter spacer (SHES) and InGaN sub-quantum well in AlGaN/GaN/AlGaN double barrier resonant tunnelling diodes (RTDs). Theoretical analysis of RTD with SHES and InGaN sub-quantum well was presented, which indicated that the negative differential resistance (NDR) characteristic was improved. And the simulation results, peak current density JP=82.67 mA/μm2, the peak-to-valley current ratio PVCR=3.38, and intrinsic negative differential resistance RN=-0.147Ω at room temperature, verified the improvement of NDR characteristic brought about by SHES and InGaN sub-quantum well. Both the theoretical analysis and simulation results showed that the device performance, especially the average oscillator output power presented great improvement and reached 2.77mW/μm2 magnitude. And the resistive cut-off frequency would benefit a lot from the relatively small RN as well. Our works provide an important alternative to the current approaches in designing new structure GaN based RTD for practical high frequency and high power applications.

Evaluation of implantation-disordering of (InGa)As/GaAs strained-layer superlattices

NASA Astrophysics Data System (ADS)

Myers, D. R.; Barnes, C. E.; Arnold, G. W.; Dawson, L. R.; Biefeld, R. M.; Zipperian, T. E.; Gourley, P. L.; Fritz, I. J.

The optical and transport properties of InO 2GaO 8As/GaAs strained-layer superlattices (SLS's) which were implanted either with 5 x 10 to the 15th power, 250 keV Zn(+) or with 5 x 10 to 14th power/square cm/cm(2), 70 keV Be(+) and annealed under an arsenic overpressure at 600 (0) C were examined. For both cases, electrical activation in the implantation-doped regions equalled that of similar implants and anneals in bulk GaAs, even though the Be implant retained the SLS structure, while the Zn implant intermixed the SLS layers to produce an alloy semiconductor of the average SLS composition. Photoluminescence intensities in the annealed implanted regions were significantly reduced from that of virgin material, apparently due to residual implant damage. Diodes formed from both the Be- and the Zn-implanted SLS' produced electroluminescence internsity comparable to that of grown-junction SLS diodes in the same chemical system, despite the implantation processing and the potential for vertical lattice mismatch in the Zn-disordered SLS device. These results indicate that Zn-disordering can be as useful for strained-layer superlattices as in lattice-matched systems.

A sub-nW 2.4 GHz Transmitter for Low Data-Rate Sensing Applications

PubMed Central

Mercier, Patrick P.; Bandyopadhyay, Saurav; Lysaght, Andrew C.; Stankovic, Konstantina M.; Chandrakasan, Anantha P.

2015-01-01

This paper presents the design of a narrowband transmitter and antenna system that achieves an average power consumption of 78 pW when operating at a duty-cycled data rate of 1 bps. Fabricated in a 0.18 µm CMOS process, the transmitter employs a direct-RF power oscillator topology where a loop antenna acts as a both a radiative and resonant element. The low-complexity single-stage architecture, in combination with aggressive power gating techniques and sizing optimizations, limited the standby power of the transmitter to only 39.7 pW at 0.8 V. Supporting both OOK and FSK modulations at 2.4 GHz, the transmitter consumed as low as 38 pJ/bit at an active-mode data rate of 5 Mbps. The loop antenna and integrated diodes were also used as part of a wireless power transfer receiver in order to kick-start the system power supply during energy harvesting operation. PMID:26246641

Diode lasers optimized in brightness for fiber laser pumping

NASA Astrophysics Data System (ADS)

Kelemen, M.; Gilly, J.; Friedmann, P.; Hilzensauer, S.; Ogrodowski, L.; Kissel, H.; Biesenbach, J.

2018-02-01

In diode laser applications for fiber laser pumping and fiber-coupled direct diode laser systems high brightness becomes essential in the last years. Fiber coupled modules benefit from continuous improvements of high-power diode lasers on chip level regarding output power, efficiency and beam characteristics resulting in record highbrightness values and increased pump power. To gain high brightness not only output power must be increased, but also near field widths and far field angles have to be below a certain value for higher power levels because brightness is proportional to output power divided by beam quality. While fast axis far fields typically show a current independent behaviour, for broadarea lasers far-fields in the slow axis suffer from a strong current and temperature dependence, limiting the brightness and therefore their use in fibre coupled modules. These limitations can be overcome by carefully optimizing chip temperature, thermal lensing and lateral mode structure by epitaxial and lateral resonator designs and processing. We present our latest results for InGaAs/AlGaAs broad-area single emitters with resonator lengths of 4mm emitting at 976nm and illustrate the improvements in beam quality over the last years. By optimizing the diode laser design a record value of the brightness for broad-area lasers with 4mm resonator length of 126 MW/cm2sr has been demonstrated with a maximum wall-plug efficiency of more than 70%. From these design also pump modules based on 9 mini-bars consisting of 5 emitters each have been realized with 360W pump power.

Single event burnout of high-power diodes

NASA Astrophysics Data System (ADS)

Maier, K. H.; Denker, A.; Voss, P.; Becker, H.-W.

1998-12-01

High-power diodes might be damaged by a single particle of cosmic radiation. This particle has first to produce a secondary nucleus, that ionizes more densely, through a nuclear reaction with the silicon of the diode. A multiplication of the number of charge carriers, primarily produced by this nucleus, can occur and eventually lead to a break down. The onset of this charge carrier multiplication is investigated with accelerated heavy ions under well controlled conditions. Clear trends are revealed, but the process is not yet understood.

Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics

NASA Technical Reports Server (NTRS)

Been, J. F.

1973-01-01

The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.

Diode-pumped passively mode-locked and passively stabilized Nd3+:BaY2F8 laser

NASA Astrophysics Data System (ADS)

Agnesi, Antonio; Guandalini, Annalisa; Tomaselli, Alessandra; Sani, Elisa; Toncelli, Alessandra; Tonelli, Mauro

2004-07-01

Continuous-wave mode locking (CW-ML) of a diode-pumped Nd3+:BaY2F8 laser is reported for the first time to our knowledge. Pulses as short as 4.8 ps were measured with a total output power of almost equal to 1 W at 1049 nm, corresponding to 3.4 W of absorbed power from the pump diode at 806 nm. A novel technique for passive stabilization of CW-ML has been demonstrated.

Integrated heterodyne terahertz transceiver

DOEpatents

Lee, Mark [Albuquerque, NM; Wanke, Michael C [Albuquerque, NM

2009-06-23

A heterodyne terahertz transceiver comprises a quantum cascade laser that is integrated on-chip with a Schottky diode mixer. An antenna connected to the Schottky diode receives a terahertz signal. The quantum cascade laser couples terahertz local oscillator power to the Schottky diode to mix with the received terahertz signal to provide an intermediate frequency output signal. The fully integrated transceiver optimizes power efficiency, sensitivity, compactness, and reliability. The transceiver can be used in compact, fieldable systems covering a wide variety of deployable applications not possible with existing technology.

High power diode lasers for solid-state laser pumps

NASA Technical Reports Server (NTRS)

Linden, Kurt J.; Mcdonnell, Patrick N.

1994-01-01

The development and commercial application of high power diode laser arrays for use as solid-state laser pumps is described. Such solid-state laser pumps are significantly more efficient and reliable than conventional flash-lamps. This paper describes the design and fabrication of diode lasers emitting in the 780 - 900 nm spectral region, and discusses their performance and reliability. Typical measured performance parameters include electrical-to-optical power conversion efficiencies of 50 percent, narrow-band spectral emission of 2 to 3 nm FWHM, pulsed output power levels of 50 watts/bar with reliability values of over 2 billion shots to date (tests to be terminated after 10 billion shots), and reliable operation to pulse lengths of 1 ms. Pulse lengths up to 5 ms have been demonstrated at derated power levels, and CW performance at various power levels has been evaluated in a 'bar-in-groove' laser package. These high-power 1-cm stacked-bar arrays are now being manufactured for OEM use. Individual diode laser bars, ready for package-mounting by OEM customers, are being sold as commodity items. Commercial and medical applications of these laser arrays include solid-state laser pumping for metal-working, cutting, industrial measurement and control, ranging, wind-shear/atmospheric turbulence detection, X-ray generation, materials surface cleaning, microsurgery, ophthalmology, dermatology, and dental procedures.

Push-pull converter with energy saving circuit for protecting switching transistors from peak power stress

NASA Technical Reports Server (NTRS)

Mclyman, W. T. (Inventor)

1981-01-01

In a push-pull converter, switching transistors are protected from peak power stresses by a separate snubber circuit in parallel with each comprising a capacitor and an inductor in series, and a diode in parallel with the inductor. The diode is connected to conduct current of the same polarity as the base-emitter juction of the transistor so that energy stored in the capacitor while the transistor is switched off, to protect it against peak power stress, discharges through the inductor when the transistor is turned on, and after the capacitor is discharges through the diode. To return this energy to the power supply, or to utilize this energy in some external circuit, the inductor may be replaced by a transformer having its secondary winding connected to the power supply or to the external circuit.

Mecanismes physiques et fondements theoriques de la recuperation d'energie micro-ondes ambiante pour les dispositifs sans fil a faible consommation

NASA Astrophysics Data System (ADS)

Petzl Lorenz, Carlos Henrique

Powering low consumption and low duty cycle devices and circuits using Ambient Microwave Energy Harvesting (AMEH) has been the subject of several investigations in recent years. The interest for this research topic has been promoted mainly by various and new applications driven mainly by the Internet of things, Building Automation and new developments in devices for the Body Area Networks. A common characteristic among several of these applications is the need for a wireless source which does not require regular maintenance, and has a small size and low weight. Batteries are often too cumbersome and require a maintenance plan to recharge or replace them, which is not always possible. A new source of energy is thus necessary. Ambient energy harvesting is proposed as an alternative source of power to these low power consumption devices and circuits. This M.A.Sc. work is developed to explore the microwave ambient energy harvesting using diode rectifier circuits. A mathematical model is first developed to explain the mechanisms that contribute to the process of recovery of microwave energy in the range of power found in the ambient microwave energy harvesting applications. An evaluation of this model is made using simulation results and then measurements results from three prototypes developed under this M.A.Sc. program. The results show an excellent agreement between the three methods. The developed model includes losses in the parasitic components of the non-linear element used for the rectification of energy as well as the impedance matching network insertion losses. Based on this model, two possible ways of improving the efficiency of ambient microwave power rectifiers at the power levels found in the AMEH are explored. In this work, it is considered that the AMEH takes place within the range of powers with a peak value of -30 dBm, however at average power levels well below this threshold. First, a cooperative hybrid circuit of ambient energy harvesting is presented where collected microwave and mechanical energies are converted in a cooperative manner through a single nonlinear component. Theory, simulations and measurements show that the total power recovered by the proposed scheme can provide up to twice the efficiency of a circuit combining the output of two independent harvesters. Then, a work demonstrating for the first time that the limitations of a Schottky diode harvester can be overcome by using backward tunnel diodes is presented. It is shown that the limitation reached by the Schottky diodes half a century ago can be overcome thanks to a higher current responsivity obtained through tunneling transport. The measured power recovery efficiency was equal to 18.2% when a -30 dBm signal at 2.4 GHz was applied to the input of the microwave energy harvesting circuit. The efficiency of conversion for a similar circuit using Schottky diodes, which is presented in the first chapter together with the mathematical model, does not exceed 11% at the same input power level and similar frequency. On the date of publication of the articles presented in this thesis, the highest published microwave power conversion efficiency was close to 5% for input power levels equal to -30 dBm and frequency close to 2 GHz. Finally, an application of microwave power transfer is presented. A rectenna operating at 94 GHz is built and measured, an energy conversion efficiency equal to 37.7% was obtained for an input power equal to 3 dBm. This rectenna is proposed as an alternative power source for microrobots, which may not use batteries due to their small size and light weight.

Resonantly diode-pumped Er:YAG laser: 1470-nm versus 1530-nm CW pumping case

NASA Astrophysics Data System (ADS)

Kudryashov, Igor; Ter-Gabrielyan, Nikolai; Dubinskii, Mark

2009-05-01

Growing interest to high power lasers in the eye-safe spectral domain initiated a new wave of activity in developing solid-state lasers based on bulk Er3+-doped materials. The resonant pumping of SSL allows for shifting significant part of thermal load from gain medium itself to the pump diodes, thus greatly reducing gain medium thermal distortions deleterious to SSL power scaling with high beam quality. The two major resonant pumping bands in Er:YAG are centered around 1470 and 1532 nm. Pumping into each of these bands has its pros and contras. The best approach to resonant pumping of Er:YAG active media in terms of pump wavelength is yet to be determined. We report the investigation results of high power diode-pumped Er:YAG laser aimed at direct comparison of resonant pumping at 1470 and 1532 nm. Two sources used for pumping were: 1530-nm 10-diode bar stack (>300 W CW) and 1470-nm 10-diode bar stack (>650 W CW). Both pumps were spectrally narrowed by external volume Bragg gratings. The obtained spectral width of less than 1 nm allowed for 'in-line' pumping of Er3+ in either band. The obtained CW power of over 87 W is, to the best of our knowledge, the record high power reported for resonantly pumped Er:YAG DPSSL at room temperature.

Device characterization and optimization of small molecule organic solar cells assisted by modelling simulation of the current-voltage characteristics.

PubMed

Zuo, Yi; Wan, Xiangjian; Long, Guankui; Kan, Bin; Ni, Wang; Zhang, Hongtao; Chen, Yongsheng

2015-07-15

In order to understand the photovoltaic performance differences between the recently reported DR3TBTT-HD and DR3TBDT2T based solar cells, a modified two-diode model with Hecht equation was built to simulate the corresponding current-voltage characteristics. The simulation results reveal that the poor device performance of the DR3TBDTT-HD based device mainly originated from its insufficient charge transport ability, where an average current of 5.79 mA cm(-2) was lost through this pathway at the maximum power point for the DR3TBDTT-HD device, nearly three times as large as that of the DR3TBDT2T based device under the same device fabrication conditions. The morphology studies support these simulation results, in which both Raman and 2D-GIXD data reveal that DR3TBTT-HD based blend films exhibit lower crystallinity. Spin coating at low temperature was used to increase the crystallinity of DR3TBDTT-HD based blend films, and the average current loss through insufficient charge transport at maximum power point was suppressed to 2.08 mA cm(-2). As a result, the average experimental power conversion efficiency of DR3TBDTT-HD based solar cells increased by over 40%.

Experimental study on parasitic mode suppression using FeSiAl in relativistic klystron amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zehai

2015-03-15

Experimental study of parasitic mode suppression using electromagnetic attenuate material FeSiAl in an S-band Relativistic Klystron Amplifier (RKA) is presented in this paper. The FeSiAl powder is coated and sintered onto the inner surface of a drift tube which locates between the input and the middle cavity of the RKA. Cold tests show that the attenuate rate of the tube against parasitic mode TE{sub 11} is about 50%. Experiments carried out on the Torch-01 accelerator present that the tube is effective in suppressing the parasitic mode. Two typical outputs are obtained. When the diode voltage is on a moderate level,more » the RKA operates well and the parasitic mode is totally suppressed. The pulse length of the High Power Microwave (HPM) almost equals the electron beam pulse length and the HPM average output power is about 300 MW, with a power efficiency of 10%. When the diode voltage is on a higher level, the output power and efficiency rise but the parasitic mode oscillation occurred and the pulse length is shortened. By contrast, the parasitic mode oscillation is too strong for the RKA to operate normally with un-sintered drift tube. The experimental study implies that FeSiAl is effective in suppressing the parasitic mode oscillation in a certain extent. However, total suppression needs a deeper attenuate rate and further investigation.« less

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

NASA Astrophysics Data System (ADS)

Liang, De-Chun; An, Qi; Jin, Peng; Li, Xin-Kun; Wei, Heng; Wu, Ju; Wang, Zhan-Guo

2011-10-01

This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

303 nm continuous wave ultraviolet laser generated by intracavity frequency-doubling of diode-pumped Pr3+:LiYF4 laser

NASA Astrophysics Data System (ADS)

Zhu, Pengfei; Zhang, Chaomin; Zhu, Kun; Ping, Yunxia; Song, Pei; Sun, Xiaohui; Wang, Fuxin; Yao, Yi

2018-03-01

We demonstrate an efficient and compact ultraviolet laser at 303 nm generated by intracavity frequency doubling of a continuous wave (CW) laser diode-pumped Pr3+:YLiF4 laser at 607 nm. A cesium lithium borate (CLBO) crystal, cut for critical type I phase matching at room temperature, is used for second-harmonic generation (SHG) of the fundamental laser. By using an InGaN laser diode array emitting at 444.3 nm with a maximum incident power of 10 W, as high as 68 mW of CW output power at 303 nm is achieved. The output power stability in 4 h is better than 2.85%. To the best of our knowledge, this is high efficient UV laser generated by frequency doubling of an InGaN laser diode array pumped Pr3+:YLiF4 laser.

On-Chip Power-Combining for High-Power Schottky Diode Based Frequency Multipliers

NASA Technical Reports Server (NTRS)

Siles Perez, Jose Vicente (Inventor); Chattopadhyay, Goutam (Inventor); Lee, Choonsup (Inventor); Schlecht, Erich T. (Inventor); Jung-Kubiak, Cecile D. (Inventor); Mehdi, Imran (Inventor)

2015-01-01

A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.

Fibre-coupled red diode-pumped Alexandrite TEM00 laser with single and double-pass end-pumping

NASA Astrophysics Data System (ADS)

Arbabzadah, E. A.; Damzen, M. J.

2016-06-01

We report the investigation of an Alexandrite laser end-pumped by a fibre-coupled red diode laser module. Power, efficiency, spatial, spectral, and wavelength tuning performance are studied as a function of pump and laser cavity parameters. It is the first demonstration, to our knowledge, of greater than 1 W power and also highest laser slope efficiency (44.2%) in a diode-pumped Alexandrite laser with diffraction-limited TEM00 mode operation. Spatial quality was excellent with beam propagation parameter M 2 ~ 1.05. Wavelength tuning from 737-796 nm was demonstrated using an intracavity birefringent tuning filter. Using a novel double pass end-pumping scheme to get efficient absorption of both polarisation states of the scrambled fibre-delivered diode pump, a total output coupled power of 1.66 W is produced in TEM00 mode with 40% slope efficiency.

Vertical III-nitride thin-film power diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

2017-03-14

A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

Enhancement of the performance of GaN IMPATT diodes by negative differential mobility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Yang; Yang, Lin’an, E-mail: layang@xidian.edu.cn; Chen, Qing

2016-05-15

A theoretical analysis of high-efficiency punch-through operation GaN-based terahertz IMPATT diodes has been carried out in this paper. It is shown that the negative differential mobility (NDM) characteristics of GaN coupled with the space charge effect acting as a self-feedback system can markedly increase the drift velocity of injection carriers, and thereby enhance diode performance under appropriate external RF voltage. The behavior of traveling electrons in the transit zone is investigated in detail. It is found that the IMPATT diode with a punch-through structure operating in the NDM mode exhibits superior characteristics compared with the equivalent diode operating in themore » Si-like constant mobility mode. In particular, the NDM-mode diode can tolerate a larger RF voltage swing than that operating in constant mobility mode. Numerical simulation results reveal that the highest efficiency of 26.6% and maximum RF power of 2.29 W can be achieved for the NDM-mode diode at a frequency of 225 GHz. A highest efficiency of 19.0% and maximum RF power of 1.58 W are obtained for the diode with constant mobility.« less

Theoretical and experimental investigation of a rectenna element for microwave power transmission

NASA Technical Reports Server (NTRS)

Mcspadden, James O.; Yoo, Taewhan; Chang, Kai

1992-01-01

A microstrip measurement system has been designed to analyze packaged GaAs Schottky barrier diodes under small and large signal conditions. The nonlinear equivalent circuit parameters of the diode are determined using a small signal test method that analyzes the diode's scattering parameters at various bias levels. The experimental results of a 2.45 GHz diode are verified using a nonlinear circuit simulation program based on a multireflection algorithm. A 35 GHz rectenna has been built using a microstrip patch antenna and Ka-band mixer diode. The measured efficiency was 29 percent at 120 mW input power. A frequency selective surface is designed using an equivalent circuit model to reduce the second harmonic radiations for a 2.45 GHz rectenna. Theoretical results are found to be in fairly good agreement with experiments.

Potential converter for laser-power beaming

NASA Technical Reports Server (NTRS)

Walker, Gilbert H.; Williams, Michael D.; Schuster, Gregory L.; Iles, Peter A.

1991-01-01

Future space missions, such as those associated with the Space Exploration Initiative (SEI), will require large amounts of power for operation of bases, rovers, and orbit transfer vehicles. One method for supplying this power is to beam power from a spaced based or Earth based laser power station to a receiver where laser photons can be converted to electricity. Previous research has described such laser power stations orbiting the Moon and beaming power to a receiver on the surface of the Moon by using arrays of diode lasers. Photovoltaic converters that can be efficiently used with these diode lasers are described.

Coupled Electro-Thermal Simulations of Single Event Burnout in Power Diodes

NASA Astrophysics Data System (ADS)

Albadri, A. M.; Schrimpf, R. D.; Walker, D. G.; Mahajan, S. V.

2005-12-01

Power diodes may undergo destructive failures when they are struck by high-energy particles during the off state (high reverse-bias voltage). This paper describes the failure mechanism using a coupled electro-thermal model. The specific case of a 3500-V diode is considered and it is shown that the temperatures reached when high voltages are applied are sufficient to cause damage to the constituent materials of the diode. The voltages at which failure occurs (e.g., 2700 V for a 17-MeV carbon ion) are consistent with previously reported data. The simulation results indicate that the catastrophic failures result from local heating caused by avalanche multiplication of ion-generated carriers.

Ceramic planar waveguide laser of non-aqueous tape casting fabricated YAG/Yb:YAG/YAG

PubMed Central

Wang, Chao; Li, Wenxue; Yang, Chao; Bai, Dongbi; Li, Jiang; Ge, Lin; Pan, Yubai; Zeng, Heping

2016-01-01

Ceramic YAG/Yb:YAG/YAG planar waveguide lasers were realized on continuous-wave and mode-locked operations. The straight waveguide, fabricated by non-aqueous tape casting and solid state reactive sintering, enabled highly efficient diode-pumped waveguide continuous-wave laser with the slope efficiency of 66% and average output power of more than 3 W. The influence of the waveguide structure on the wavelength tunability was also experimentally investiccgated with a dispersive prism. Passively mode-locked operation of the ceramic waveguide laser was achieved by using a semiconductor saturable absorber mirror (SESAM), output 2.95 ps pulses with maximum power of 385 mW at the central wavelength of 1030 nm. PMID:27535577

Advances in high-power 9XXnm laser diodes for pumping fiber lasers

NASA Astrophysics Data System (ADS)

Skidmore, Jay; Peters, Matthew; Rossin, Victor; Guo, James; Xiao, Yan; Cheng, Jane; Shieh, Allen; Srinivasan, Raman; Singh, Jaspreet; Wei, Cailin; Duesterberg, Richard; Morehead, James J.; Zucker, Erik

2016-03-01

A multi-mode 9XXnm-wavelength laser diode was developed to optimize the divergence angle and reliable ex-facet power. Lasers diodes were assembled into a multi-emitter pump package that is fiber coupled via spatial and polarization multiplexing. The pump package has a 135μm diameter output fiber that leverages the same optical train and mechanical design qualified previously. Up to ~ 270W CW power at 22A is achieved at a case temperature ~ 30ºC. Power conversion efficiency is 60% (peak) that drops to 53% at 22A with little thermal roll over. Greater than 90% of the light is collected at < 0.12NA at 16A drive current that produces 3.0W/(mm-mr)2 radiance from the output fiber.

Injection locking of a low cost high power laser diode at 461 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pagett, C. J. H.; Moriya, P. H., E-mail: paulohisao@ifsc.usp.br; Celistrino Teixeira, R.

2016-05-15

Stable laser sources at 461 nm are important for optical cooling of strontium atoms. In most existing experiments, this wavelength is obtained by frequency doubling infrared lasers, since blue laser diodes either have low power or large emission bandwidths. Here, we show that injecting less than 10 mW of monomode laser radiation into a blue multimode 500 mW high power laser diode is capable of slaving at least 50% of the power to the desired frequency. We verify the emission bandwidth reduction by saturation spectroscopy on a strontium gas cell and by direct beating of the slave with the mastermore » laser. We also demonstrate that the laser can efficiently be used within the Zeeman slower for optical cooling of a strontium atomic beam.« less

700 W blue fiber-coupled diode-laser emitting at 450 nm

NASA Astrophysics Data System (ADS)

Balck, A.; Baumann, M.; Malchus, J.; Chacko, R. V.; Marfels, S.; Witte, U.; Dinakaran, D.; Ocylok, S.; Weinbach, M.; Bachert, C.; Kösters, A.; Krause, V.; König, H.; Lell, A.; Stojetz, B.; Löffler, A.; Strauss, U.

2018-02-01

A high-power blue laser source was long-awaited for processing materials with low absorption in the near infrared (NIR) spectral range like copper or gold. Due to the huge progress of GaN-based semiconductors, the performance of blue diode-lasers has made a major step forward recently. With the availability of unprecedented power levels at cw-operating blue diode-lasers emitting at 450 nm, it was possible to set up a high-power diode-laser in the blue spectral range to address these conventional laser applications and probably beyond that to establish completely new utilizations for lasers. Within the scope of the research project "BlauLas", funded within the German photonic initiative "EFFILAS" [8] by the German Federal Ministry of Education and Research (BMBF), Laserline in cooperation with OSRAM aims to realize a cw fiber-coupled diode-laser exceeding 1 kW blue laser power. In this paper the conceptual design and experimental results of a 700 W blue fiber-coupled diode-laser are presented. Initially a close look had to be taken on the mounting techniques of the semiconductors to serve the requirements of the GaN laser diodes. Early samples were used for extensive long term tests to investigate degradation processes. With first functional laser-modules we set up fiber-coupled laser-systems for further testing. Besides adaption of well-known optical concepts a main task within the development of the laser system was the selection and examination of suitable materials and assembling in order to minimize degradation and reach adequate lifetimes. We realized R&D blue lasersystems with lifetimes above 5,000 h, which enable first application experiments on processing of various materials as well as experiments on conversion to white-light.

AlGaInN laser diode technology for defence, security and sensing applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2014-10-01

The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW in the 400-420nm wavelength range that are suitable for telecom applications. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode `mini-array' with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.or.

The Impact of a 940 nm Diode Laser with Radial Firing Tip and Bare End Fiber Tip on Enterococcus faecalis in the Root Canal Wall Dentin of Bovine Teeth: An In Vitro Study.

PubMed

Schulte-Lünzum, Ruth; Gutknecht, Norbert; Conrads, Georg; Franzen, Rene

2017-07-01

This in vitro study aimed to compare the bactericidal effect of two different laser delivery systems, a radial firing tip (RFT) and bare end fiber tip (BFT) used with the 940 nm diode laser on Enterococcus faecalis inoculated onto bovine radicular dentin. A total of 100 bovine dentin slices with a defined thickness of 500 and 1000 μm were prepared. They were assigned into four test groups together with untreated samples served as control for each slice thickness. The slices were inoculated on one side with 1 μL E. faecalis suspension and laser irradiation was performed indirectly on the opposite side with the 940 nm diode laser delivered with a 200 μm RFT and a BFT at 1 and 1.5 W in continuous wave mode for 8 sec per cycle and repeated four times. After irradiation, the remaining bacteria were detached and the produced suspension was diluted and plated onto blood agar plates with 5% sheep blood and incubated overnight at 37°C in a CO 2 -rich atmosphere. The colony-forming units of E. faecalis were counted and the bacterial reduction was analyzed. The diode laser equipped with RFT fiber design further reduced the number of vital E. faecalis cells significantly compared with BFT design, regardless of the used power and dentin thickness (p < 0.0001). The highest average value of 4 log kills was observed in 500 μm slice thickness irradiated with RFT at 1.5 W. Temperature measurements on the external root surface at 1 mm from the apex did not elicit a harmful temperature elevation in both power settings and fiber designs. Within the studied parameters, 940 nm diode laser in conjugation with RFT showed a satisfactory bactericidal effect without any thermal side effect to the tooth-supporting tissues.

Coupling of an applied field magnetically insulated ion diode to a high power magnetically insulated transmission line system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maenchen, J.E.

1983-01-01

The coupling of energy from a high power pulsed accelerator through a long triplate magnetically insulated transmission line (MITL) in vacuum to an annular applied magnetic field insulated extraction ion diode is examined. The narrow power transport window and the wave front erosion of the MITL set stringent impedance history conditions on the diode load. A new ion diode design developed to satisfy these criteria with marginal electron insulation is presented. The LION accelerator is used to provide a positive polarity 1.5 MV, 350 kA, 40 ns FWHM pulse with a 30 kA/ns current rate from a triplate MITL source.more » A transition converts the triplate into a cylindrical cross section which flares into the ion diode load. Extensive current and voltage measurements performed along this structure and on the extracted ion beam provide conclusive evidence that the self insulation condition of the MITL is maintained in the transition by current loss alone. The ion diode utilizes a radial magnetic field between a grounded cathode annular emission tip and a disk anode. A 50 cm/sup 2/ dielectric/metal anode area serves as the ion plasma source subject to direct electron bombardment from the opposing cathode tip under marginal magnetic insulation conditions. The ions extracted cross the radial magnetic field and exit the diode volume as an annular cross section beam of peak current about 100 kA. The diode current gradually converts from the initial electron flow to nearly 100% ion current af« less

Respiratory complications after diode-laser-assisted tonsillotomy.

PubMed

Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

2014-08-01

Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p < 0.01, 95 % CI 1.4780-16.9152) or who suffered from relevant comorbidities (OR = 4.84, p < 0.01, 95 % CI 1.5202-15.4091). Moreover, a diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p < 0.01, 95 % CI 1.3924-8.5602). Postoperative respiratory complications should not be underestimated in children with sleep-disordered breathing (SDB). Therefore, children with SDB, children with comorbidities or children younger than 3 years should be considered "at risk" and children with confirmed moderate to severe OSAS should be referred to a PICU following diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

Improved long-term electrical stability of pulsed high-power diodes using dense carbon fiber velvet cathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Jie; Shu Ting; Wang Hui

2012-07-15

The influence of fibrous velvet cathodes on the electrical stability of a planar high-power diode powered by a {approx}230 kV, {approx}110 ns pulse has been investigated. The current density was on the order of {approx}123 A/cm{sup 2}. A combination of time-resolved electrical and optical diagnostics has been employed to study the basic phenomenology of the temporal and spatial evolution of the diode plasmas. Additionally, an impedance model was used to extract information about this plasma from voltage and current profiles. The results from the two diagnostics were compared. By comparison with commercial polymer velvet cathode, the dense carbon fiber velvetmore » cathode showed superior long-term electrical stability as judged by the change in cathode turn-on field, ignition delays, diode impedance, and surface plasma characteristics during the voltage flattop, a promising result for applications where reliable operation at high power is required. Finally, it was shown that the interaction of the electron beam with the stainless steel anode did not lead to the formation of anode plasma. These results may be of interest to the high power microwave systems with cold cathodes.« less

Detonation control

DOEpatents

Mace, Jonathan L.; Seitz, Gerald J.; Bronisz, Lawrence E.

2016-10-25

Detonation control modules and detonation control circuits are provided herein. A trigger input signal can cause a detonation control module to trigger a detonator. A detonation control module can include a timing circuit, a light-producing diode such as a laser diode, an optically triggered diode, and a high-voltage capacitor. The trigger input signal can activate the timing circuit. The timing circuit can control activation of the light-producing diode. Activation of the light-producing diode illuminates and activates the optically triggered diode. The optically triggered diode can be coupled between the high-voltage capacitor and the detonator. Activation of the optically triggered diode causes a power pulse to be released from the high-voltage capacitor that triggers the detonator.

High power cascade diode lasers emitting near 2 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu

2016-03-28

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumpingmore » scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.« less

Microwatt power consumption maximum power point tracking circuit using an analogue differentiator for piezoelectric energy harvesting

NASA Astrophysics Data System (ADS)

Chew, Z. J.; Zhu, M.

2015-12-01

A maximum power point tracking (MPPT) scheme by tracking the open-circuit voltage from a piezoelectric energy harvester using a differentiator is presented in this paper. The MPPT controller is implemented by using a low-power analogue differentiator and comparators without the need of a sensing circuitry and a power hungry controller. This proposed MPPT circuit is used to control a buck converter which serves as a power management module in conjunction with a full-wave bridge diode rectifier. Performance of this MPPT control scheme is verified by using the prototyped circuit to track the maximum power point of a macro-fiber composite (MFC) as the piezoelectric energy harvester. The MFC was bonded on a composite material and the whole specimen was subjected to various strain levels at frequency from 10 to 100 Hz. Experimental results showed that the implemented full analogue MPPT controller has a tracking efficiency between 81% and 98.66% independent of the load, and consumes an average power of 3.187 μW at 3 V during operation.

Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

NASA Astrophysics Data System (ADS)

Muramoto, Yoshihiko; Kimura, Masahiro; Nouda, Suguru

2014-06-01

Ultraviolet light-emitting diodes (UV-LEDs) have started replacing UV lamps. The power per LED of high-power LED products has reached 12 W (14 A), which is 100 times the values observed ten years ago. In addition, the cost of these high-power LEDs has been decreasing. In this study, we attempt to understand the technologies and potential of UV-LEDs.

A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

NASA Technical Reports Server (NTRS)

Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

2018-01-01

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

Analysis and Design of Bridgeless Switched Mode Power Supply for Computers

NASA Astrophysics Data System (ADS)

Singh, S.; Bhuvaneswari, G.; Singh, B.

2014-09-01

Switched mode power supplies (SMPSs) used in computers need multiple isolated and stiffly regulated output dc voltages with different current ratings. These isolated multiple output dc voltages are obtained by using a multi-winding high frequency transformer (HFT). A half-bridge dc-dc converter is used here for obtaining different isolated and well regulated dc voltages. In the front end, non-isolated Single Ended Primary Inductance Converters (SEPICs) are added to improve the power quality in terms of low input current harmonics and high power factor (PF). Two non-isolated SEPICs are connected in a way to completely eliminate the need of single-phase diode-bridge rectifier at the front end. Output dc voltages at both the non-isolated and isolated stages are controlled and regulated separately for power quality improvement. A voltage mode control approach is used in the non-isolated SEPIC stage for simple and effective control whereas average current control is used in the second isolated stage.

High power diode and solid state lasers

NASA Astrophysics Data System (ADS)

Eichler, H. J.; Fritsche, H.; Lux, O.; Strohmaier, S. G.

2017-01-01

Diode lasers are now basic pump sources of crystal, glass fiber and other solid state lasers. Progress in the performance of all these lasers is related. Examples of recently developed diode pumped lasers and Raman frequency converters are described for applications in materials processing, Lidar and medical surgery.

CW 50W/M2 = 10.9 diode laser source by spectral beam combining based on a transmission grating.

PubMed

Zhang, Jun; Peng, Hangyu; Fu, Xihong; Liu, Yun; Qin, Li; Miao, Guoqing; Wang, Lijun

2013-02-11

An external cavity structure based on the -1st transmission grating is introduced to spectral beam combining a 970 nm diode laser bar. A CW output power of 50.8 W, an electro-optical conversion efficiency of 45%, a spectral beam combining efficiency of 90.2% and a holistic M(2) value of 10.9 are achieved. This shows a way for a diode laser source with several KW power and diffraction-limited beam quality at the same time.

Direct diode-pumped Kerr Lens 13 fs Ti:sapphire ultrafast oscillator using a single blue laser diode

DOE PAGES

Backus, Sterling; Colorado State Univ., Fort Collins, CO; Kirchner, Matt; ...

2017-05-18

We demonstrate a direct diode-pumped Kerr Lens Modelocked Ti:sapphire laser producing 13 fs pulses with 1.85 nJ energy at 78 MHz (145 mW) using a single laser diode pump. We also present a similar laser using three spectrally combined diodes, generating >300 mW output power with >50 nm bandwidth. We discuss the use of far-from TEM 00 pump laser sources, and their effect on the Kerr lens modelocking process.

Direct diode-pumped Kerr Lens 13 fs Ti:sapphire ultrafast oscillator using a single blue laser diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Backus, Sterling; Colorado State Univ., Fort Collins, CO; Kirchner, Matt

We demonstrate a direct diode-pumped Kerr Lens Modelocked Ti:sapphire laser producing 13 fs pulses with 1.85 nJ energy at 78 MHz (145 mW) using a single laser diode pump. We also present a similar laser using three spectrally combined diodes, generating >300 mW output power with >50 nm bandwidth. We discuss the use of far-from TEM 00 pump laser sources, and their effect on the Kerr lens modelocking process.

Plasma-filled diode based on the coaxial gun

NASA Astrophysics Data System (ADS)

Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.

2012-10-01

The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

Plasma-filled diode based on the coaxial gun.

PubMed

Zherlitsyn, A A; Kovalchuk, B M; Pedin, N N

2012-10-01

The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

Efficient, diode-laser-pumped, diode-laser-seeded, high-peak-power Nd:YLF regenerative amplifier.

PubMed

Selker, M D; Afzal, R S; Dallas, J L; Yu, A W

1994-04-15

Optical amplification of 11 orders of magnitude in a microlens-collimated, diode-laser-pumped regenerative amplifier has been demonstrated. The amplifier was seeded with 20-ps pulses from an FM mode-locked oscillator and with 0.9-ns pulses from a modulated diode laser. Seed pulses from both sources were amplified to energies exceeding 2.5 mJ. With the thermoelectric coolers and the Pockels cell electronics neglected, the diode-seeded system exhibited an electrical-to-optical efficiency of 2.2%.

Quasi-CW Laser Diode Bar Life Tests

NASA Technical Reports Server (NTRS)

Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

1997-01-01

NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

The 20 GHz solid state transmitter design, impatt diode development and reliability assessment

NASA Technical Reports Server (NTRS)

Picone, S.; Cho, Y.; Asmus, J. R.

1984-01-01

A single drift gallium arsenide (GaAs) Schottky barrier IMPATT diode and related components were developed. The IMPATT diode reliability was assessed. A proof of concept solid state transmitter design and a technology assessment study were performed. The transmitter design utilizes technology which, upon implementation, will demonstrate readiness for development of a POC model within the 1982 time frame and will provide an information base for flight hardware capable of deployment in a 1985 to 1990 demonstrational 30/20 GHz satellite communication system. Life test data for Schottky barrier GaAs diodes and grown junction GaAs diodes are described. The results demonstrate the viability of GaAs IMPATTs as high performance, reliable RF power sources which, based on the recommendation made herein, will surpass device reliability requirements consistent with a ten year spaceborne solid state power amplifier mission.

Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Jaya, T. P.; Pradyumnan, P. P.

2017-12-01

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

PubMed

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-06-20

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

Diode laser (980nm) cartilage reshaping

NASA Astrophysics Data System (ADS)

El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

2011-03-01

Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

A homogeneous focusing system for diode lasers and its applications in metal surface modification

NASA Astrophysics Data System (ADS)

Wang, Fei; Zhong, Lijing; Tang, Xiahui; Xu, Chengwen; Wan, Chenhao

2018-06-01

High power diode lasers are applied in many different areas, including surface modification, welding and cutting. It is an important technical trend in laser processing of metals in the future. This paper aims to analyze the impact of the shape and homogeneity of the focal spot of the diode laser on surface modification. A focusing system using the triplet lenses for a direct output diode laser which can be used to eliminate coma aberrations is studied. A rectangular stripe with an aspect ratio from 8:1 to 25:1 is obtained, in which the power is homogeneously distributed along the fast axis, the power is 1117.6 W and the peak power intensity is 1.1587 × 106 W/cm2. This paper also presents a homogeneous focusing system by use of a Fresnel lens, in which the incident beam size is 40 × 40 mm2, the focal length is 380 mm, and the dimension of the obtained focal spot is 2 × 10 mm2. When the divergence angle of the incident light is in the range of 12.5-20 mrad and the pitch is 1 mm, the obtained homogeneity in the focal spot is the optimum (about 95.22%). Experimental results show that the measured focal spot size is 2.04 × 10.39 mm2. This research presents a novel design of homogeneous focusing systems for high power diode lasers.

Retrospective analysis of the treatment of melasma lesions exhibiting increased vascularity with the 595-nm pulsed dye laser combined with the 1927-nm fractional low-powered diode laser.

PubMed

Geddes, Elizabeth R C; Stout, Ashlyn B; Friedman, Paul M

2017-01-01

Melasma presents a significant challenge to laser surgeons. Aggressive treatments often result in rebound melasma or post-inflammatory pigmentary alteration. Recent reports suggest melasma pathogenesis may have a vascular component. Spectrocolorimetry can detect subtle or sub-clinical telangiectatic erythema within melasma lesions. For certain patients identified by spectrocolorimetry, effective melasma treatment may include vascular-targeted therapy together with pigment-specific treatment modalities. Such combined therapies may reduce the likelihood of melasma recurrence. To evaluate the efficacy of treating melasma lesions exhibiting subtle or sub-clinical telangiectatic erythema with the 595-nm pulsed dye laser (PDL) combined with the 1927-nm fractional low-powered diode laser (FDL). A retrospective review was performed over a 2-year period as follows. Evaluated patients (n = 11) include 10 women and 1 man, average age of 38.7 years, and Fitzpatrick skin types II-IV. Each patient exhibited melasma lesions with subtle or sub-clinical telangiectatic erythema identified by spectrocolorimetry. Each underwent a series of treatments (average of four) at approximate 4-6 week intervals of the PDL followed by the FDL. Treatments were performed same-day, sequentially, with 10-15 minute interim time allowance for skin cooling. The following PDL parameters were utilized: 10 mm spot, 10-20 ms pulse duration, 7.5-8.5 J/cm 2 fluence, 30/30 DCD. Eight passes with the FDL (Clear + Brilliant ® Permea™, Solta Medical, Hayward, CA) were then performed utilizing a "low" treatment level. Clinical endpoint was mild erythema and edema. Patients were encouraged to practice strict photoprotection and apply topical skin lightening agents, but compliance was not measured. An independent physician evaluated photographs taken at baseline and at follow-up after last treatment session (average follow-up of 96 days). A quartile improvement score was used to grade the improvement of melasma and underlying telangiectatic erythema. At time of data analysis, patient satisfaction was self-graded on a three-point scale (0 = not satisfied, 1 = satisfied, 2 = very satisfied). Six out of eleven patients (54%) demonstrated greater than 50% improvement in melasma presentation. Improvement in melasma generally paralleled improvement in erythema. No rebound melasma, post-inflammatory changes, or adverse events were noted. Patient satisfaction responses averaged 1.6, with all (10) patients reporting 1 "satisfied" or 2 "very satisfied." Melasma lesions exhibiting subtle or sub-clinical telangiectatic erythema may be improved by combined vascular-targeted laser therapy together with fractional low-powered diode laser therapy. A parallel improvement in telangiectatic erythema suggests a relationship between the underlying vasculature and hyperpigmentation. There is a low risk of adverse effects and overall patient satisfaction is high. Follow-up to optimize treatment parameters and determine long-term durability is needed. Lasers Surg. Med. 49:20-26, 2017. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

Triggering Mechanism for Neutron Induced Single-Event Burnout in Power Devices

NASA Astrophysics Data System (ADS)

Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori

2013-04-01

Cosmic ray neutrons can trigger catastrophic failures in power devices. It has been reported that parasitic transistor action causes single-event burnout (SEB) in power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). However, power diodes do not have an inherent parasitic transistor. In this paper, we describe the mechanism triggering SEB in power diodes for the first time using transient device simulation. Initially, generated electron-hole pairs created by incident recoil ions generate transient current, which increases the electron density in the vicinity of the n-/n+ boundary. The space charge effect of the carriers leads to an increase in the strength of the electric field at the n-/n+ boundary. Finally, the onset of impact ionization at the n-/n+ boundary can trigger SEB. Furthermore, this failure is closely related to diode secondary breakdown. It was clarified that the impact ionization at the n-/n+ boundary is a key point of the mechanism triggering SEB in power devices.

Power scaling of diode-pumped neodymium yttrium aluminum borate laser

NASA Technical Reports Server (NTRS)

Hemmati, Hamid

1991-01-01

Preliminary results are presented of the efficient diode-pumped operation of a neodymium yttrium aluminum borate (NYAB) laser at 531.5 nm using two 1-W diode-laser arrays for the pump. With 1380 mW of CW power incident on the crystal, as much as 51 mW of 532.5-nm laser radiation was obtained with the unoptimized cavity. The corresponding optical-to-optical conversion efficiency was 3.7 percent. A plot of the output 531.5 nm vs incident 807 nm pump power is shown. The crystal output power was critically dependent on the rotational and translational adjustment of the NYAB crystal inside the cavity. It is suggested that a crystal cut at the exact phase matching angle, placed in a cavity with proper optimal reflection and transmission mirror coatings, and pumped at proper wavelength can result in higher output power. Thus, the NYAB output power approaches that of a CW intracavity frequency doubled Nd:YAG laser.

A passive dual-circulator based transmit/receive switch for use with reflection resonators in pulse EPR

PubMed Central

Subramanian, V. S.; Epel, Boris; Mailer, Colin; Halpern, Howard J.

2009-01-01

In order to protect the low noise amplifier (LNA) in the receive arm of a pulsed 250 MHz EPR bridge, it is necessary to install as much isolation as possible between the power exciting the spin system and the LNA when high power is present in the receive arm of the bridge, while allowing the voltage induced by the magnetization in the spin sample to be passed undistorted and undiminished to the LNA once power is reduced below the level that can cause a LNA damage. We discuss a combination of techniques to accomplish this involving the power-routing circulator in the bridge, a second circulator acting as an isolator with passive shunt PIN diodes immediately following the second circulator. The low resistance of the forward biased PIN diode passively generates an impedance mismatch at the second circulator output port during the high power excitation pulse and resonator ring down. The mismatch reflects the high power to the remaining port of the second circulator, dumping it into a system impedance matched load. Only when the power diminishes below the diode conduction threshold will the resistance of the PIN diode rise to a value much higher than the system impedance. This brings the device into conduction mode. We find that the present design passively limits the output power to 14 dBm independent of the input power. For high input power levels the isolation may exceed 60 dB. This level of isolation is sufficient to fully protect the LNA of pulse EPR bridge. PMID:20052312

All-solid-state continuous-wave frequency doubling Nd:LuVO4/LBO laser with 2.17 W output power at 543 nm

NASA Astrophysics Data System (ADS)

Li, B.; Zhao, L.; Zhang, Y. B.; Zheng, Q.; Zhao, Y.; Yao, Y.

2013-03-01

Efficient and compact green-yellow laser output at 543 nm is generated by intracavity frequency doubling of a CW diode-pumped Nd:LuVO4 laser at 1086 nm under the condition of suppressing the higher gain transition near 1064 nm. With 16 W of diode pump power and the frequency-doubling crystal LBO, as high as 2.17 W of CW output power at 543 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 13.6% and the output power stability over 8 hours is better than 2.86%. To the best of our knowledge, this is the highest watt-level laser at 543 nm generated by intracavity frequency doubling of a diode pumped Nd:LuVO4 laser at 1086 nm.

High power fiber coupled diode lasers for display and lighting applications

NASA Astrophysics Data System (ADS)

Drovs, Simon; Unger, Andreas; Dürsch, Sascha; Köhler, Bernd; Biesenbach, Jens

2017-02-01

The performance of diode lasers in the visible spectral range has been continuously improved within the last few years, which was mainly driven by the goal to replace arc lamps in cinema or home projectors. In addition, the availability of such high power visible diode lasers also enables new applications in the medical field, but also the usage as pump sources for other solid state lasers. This paper summarizes the latest developments of fiber coupled sources with output power from 1.4 W to 120 W coupled into 100 μm to 400 μm fibers in the spectral range around 405 nm and 640 nm. New developments also include the use of fiber coupled multi single emitter arrays at 450 nm, as well as very compact modules with multi-W output power.

980-nm, 15-W cw laser diodes on F-mount-type heat sinks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bezotosnyi, V V; Krokhin, O N; Oleshchenko, V A

2015-12-31

We have studied the key optical emission parameters of laser diodes (emission wavelength, 980 nm; stripe contact width, 95 μm) mounted directly on F- and C-mount-type copper heat sinks, without intermediate elements (submounts). When effectively cooled by a thermoelectric microcooler, the lasers on the F-mount operated stably at output powers up to 20 W. The lasers were tested for reliable operation at an output power of 15 W for 100 h, and no decrease in output power was detected to within measurement accuracy. The experimentally determined maximum total efficiency is 71.7% and the efficiency at a nominal output power ofmore » 15 W is 61%. We compare parameters of the laser diodes mounted on C- and F-mounts and discuss the advantages of the F-mounts. (lasers)« less

Numerical modeling of reverse recovery characteristic in silicon pin diodes

NASA Astrophysics Data System (ADS)

Yamashita, Yusuke; Tadano, Hiroshi

2018-07-01

A new numerical reverse recovery model of silicon pin diode is proposed by the approximation of the reverse recovery waveform as a simple shape. This is the first model to calculate the reverse recovery characteristics using numerical equations without adjusted by fitting equations and fitting parameters. In order to verify the validity and the accuracy of the numerical model, the calculation result from the model is verified through the device simulation result. In 1980, he joined Toyota Central R&D Labs, Inc., where he was involved in the research and development of power devices such as SIT, IGBT, diodes and power MOSFETs. Since 2013 he has been a professor at the Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Japan. His current research interest is high-efficiency power conversion circuits for electric vehicles using advanced power devices.

A high power diode-side-pumped Nd:YAG/BaWO4 Raman laser at 1103 nm

NASA Astrophysics Data System (ADS)

Li, Lei; Zhang, Xingyu; Liu, Zhaojun; Wang, Qingpu; Cong, Zhenhua; Zhang, Yuangeng; Wang, Weitao; Wu, Zhenguo; Zhang, Huaijin

2013-04-01

Pulsed operation at 1103 nm of a diode-side-pumped Nd:YAG laser with intracavity Raman shifting in BaWO4 is reported. The first Stokes wavelength at 1103 nm was generated by a Raman shift of 332 cm-1 from the fundamental wave (1064 nm). A maximum power at 1103 nm of 9.4 W was obtained for a diode pump power of 115 W at a pulse repetition rate of 15 kHz. The pump-to-Stokes conversion efficiency was up to 8.2%. When the output power at 1103 nm was over 7 W, a second Stokes line at 1145 nm was also observed in the experiment. Our research indicates that efficient Raman conversion can be realized by a Raman frequency shift at 332 cm-1 in BaWO4 Raman lasers.

Ruggedized microchannel-cooled laser diode array with self-aligned microlens

DOEpatents

Freitas, Barry L.; Skidmore, Jay A.

2003-11-11

A microchannel-cooled, optically corrected, laser diode array is fabricated by mounting laser diode bars onto Si surfaces. This approach allows for the highest thermal impedance, in a ruggedized, low-cost assembly that includes passive microlens attachment without the need for lens frames. The microlensed laser diode array is usable in all solid-state laser systems that require efficient, directional, narrow bandwidth, high optical power density pump sources.

Remote Powering and Steering of Self-Propelling Microdevices by Modulated Electric Field

NASA Astrophysics Data System (ADS)

Sharma, Rachita; Velev, Orlin

2011-03-01

We have demonstrated a new class of self-propelling particles based on semiconductor diodes powered by an external uniform alternating electric field. The millimeter-sized diodes floating in water rectify the applied voltage. The resulting particle-localized electroosmotic flux propels them in the direction of the cathode or the anode depending on their surface charge. These particles suggest solutions to problems facing self-propelling microdevices, and have potential for a range of additional functions. The next step in this direction is the steering of these devices. We will present a novel technique that allows on-demand steering of these self-propelling diodes. We control remotely their direction of motion by modifying the duty cycle of the applied AC field. The diodes change their direction of motion when a DC component (wave asymmetry) is introduced into the AC signal. The DC component leads to redistribution of the counterions near the diode surface. The electric field resulting from this counterion redistribution exerts a torque on the dipole across the diode, causing its rotation. Thus, the reversal of the direction of the electroosmotic flux caused by field asymmetry leads to reversal of the direction of diode motion. This new principle of steering of self-propelling diodes can find applications in MEMs and micro-robotics.

Highly efficient, versatile, self-Q-switched, high-repetition-rate microchip laser generating Ince-Gaussian modes for optical trapping

NASA Astrophysics Data System (ADS)

Dong, Jun; He, Yu; Zhou, Xiao; Bai, Shengchuang

2016-03-01

Lasers operating in the Ince-Gaussian (IG) mode have potential applications for optical manipulation of microparticles and formation of optical vortices, as well as for optical trapping and optical tweezers. Versatile, self-Q-switched, high-peak-power, high-repetition-rate Cr, Nd:YAG microchip lasers operating in the IG mode are implemented under tilted, tightly focused laser-diode pumping. An average output power of over 2 W is obtained at an absorbed pump power of 6.4 W. The highest optical-to-optical efficiency of 33.2% is achieved at an absorbed pump power of 3.9 W. Laser pulses with a pulse energy of 7.5 μJ, pulse width of 3.5 ns and peak power of over 2 kW are obtained. A repetition rate up to 335 kHz is reached at an absorbed pump power of 5.8 W. Highly efficient, versatile, IG-mode lasers with a high repetition rate and a high peak power ensure a better flexibility in particle manipulation and optical trapping.

Highly efficient, versatile, self-Q-switched, high-repetition-rate microchip laser generating Ince–Gaussian modes for optical trapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jun Dong; Yu He; Xiao Zhou

2016-03-31

Lasers operating in the Ince-Gaussian (IG) mode have potential applications for optical manipulation of microparticles and formation of optical vortices, as well as for optical trapping and optical tweezers. Versatile, self-Q-switched, high-peak-power, high-repetition-rate Cr, Nd:YAG microchip lasers operating in the IG mode are implemented under tilted, tightly focused laser-diode pumping. An average output power of over 2 W is obtained at an absorbed pump power of 6.4 W. The highest optical-to-optical efficiency of 33.2% is achieved at an absorbed pump power of 3.9 W. Laser pulses with a pulse energy of 7.5 μJ, pulse width of 3.5 ns and peakmore » power of over 2 kW are obtained. A repetition rate up to 335 kHz is reached at an absorbed pump power of 5.8 W. Highly efficient, versatile, IG-mode lasers with a high repetition rate and a high peak power ensure a better flexibility in particle manipulation and optical trapping. (control of laser radiation parameters)« less

Four-Pass Coupler for Laser-Diode-Pumped Solid-State Laser

NASA Technical Reports Server (NTRS)

Coyle, Donald B.

2008-01-01

A four-pass optical coupler affords increased (in comparison with related prior two-pass optical couplers) utilization of light generated by a laser diode in side pumping of a solid-state laser slab. The original application for which this coupler was conceived involves a neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal slab, which, when pumped by a row of laser diodes at a wavelength of 809 nm, lases at a wavelength of 1,064 nm. Heretofore, typically, a thin laser slab has been pumped in two passes, the second pass occurring by virtue of reflection of pump light from a highly reflective thin film on the side opposite the side through which the pump light enters. In two-pass pumping, a Nd:YAG slab having a thickness of 2 mm (which is typical) absorbs about 84 percent of the 809-nm pump light power, leaving about 16 percent of the pump light power to travel back toward the laser diodes. This unused power can cause localized heating of the laser diodes, thereby reducing their lifetimes. Moreover, if the slab is thinner than 2 mm, then even more unused power travels back toward the laser diodes. The four-pass optical coupler captures most of this unused pump light and sends it back to the laser slab for two more passes. As a result, the slab absorbs more pump light, as though it were twice as thick. The gain and laser cavity beam quality of a smaller laser slab in conjunction with this optical coupler can thus be made comparable to those of a larger two-pass-pumped laser slab.

Geologic fracturing method and resulting fractured geologic structure

DOEpatents

Mace, Jonathan L.; Bradley, Christopher R.; Greening, Doran R.; Steedman, David W.

2016-11-08

Detonation control modules and detonation control circuits are provided herein. A trigger input signal can cause a detonation control module to trigger a detonator. A detonation control module can include a timing circuit, a light-producing diode such as a laser diode, an optically triggered diode, and a high-voltage capacitor. The trigger input signal can activate the timing circuit. The timing circuit can control activation of the light-producing diode. Activation of the light-producing diode illuminates and activates the optically triggered diode. The optically triggered diode can be coupled between the high-voltage capacitor and the detonator. Activation of the optically triggered diode causes a power pulse to be released from the high-voltage capacitor that triggers the detonator.

Investigations of shot reproducibility for the SMP diode at 4.5 MV.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bennett, Nichelle; Crain, Marlon D.; Droemer, Darryl W.

In experiments conducted on the RITS-6 accelerator, the SMP diode exhibits sig- ni cant shot-to-shot variability. Speci cally, for identical hardware operated at the same voltage, some shots exhibit a catastrophic drop in diode impedance. A study is underway to identify sources of shot-to-shot variations which correlate with diode impedance collapse. To remove knob emission as a source, only data from a shot series conducted with a 4.5-MV peak voltage are considered. The scope of this report is limited to sources of variability which occur away from the diode, such as power ow emission and trajectory changes, variations in pulsedmore » power, dustbin and transmission line alignment, and di erent knob shapes. We nd no changes in the transmission line hardware, alignment, or hardware preparation methods which correlate with impedance collapse. However, in classifying good versus poor shots, we nd that there is not a continuous spectrum of diode impedance behavior but that the good and poor shots can be grouped into two distinct impedance pro les. This result forms the basis of a follow-on study focusing on the variability resulting from diode physics. 3« less

Ablation of dentin by irradiation of violet diode laser

NASA Astrophysics Data System (ADS)

Hatayama, H.; Kato, J.; Akashi, G.; Hirai, Y.; Inoue, A.

2006-02-01

Several lasers have been used for clinical treatment in dentistry. Among them, diode lasers are attractive because of their compactness compared with other laser sources. Near-infrared diode lasers have been practically used for cutting soft tissues. Because they penetrate deep to soft tissues, they cause sufficiently thick coagulation layer. However, they aren't suitable for removal of carious dentin because absorption by components in dentin is low. Recently, a violet diode laser with a wavelength of 405nm has been developed. It will be effective for cavity preparation because dentin contains about 20% of collagen whose absorption coefficient at a violet wavelength is larger than that at a near-infrared wavelength. In this paper, we examined cutting performance of the violet diode laser for dentin. To our knowledge, there have been no previous reports on application of a violet laser to dentin ablation. Bovine teeth were irradiated by continuous wave violet diode laser with output powers in a range from 0.4W to 2.4W. The beam diameter on the sample was about 270μm and an irradiation time was one second. We obtained the crater ablated at more than an output power of 0.8W. The depth of crater ranged from 20μm at 0.8W to 90μm at 2.4W. Furthermore, the beam spot with an output power of 1.7W was scanned at a speed of 1mm/second corresponding to movement of a dentist's hand in clinical treatment. Grooves with the depth of more than 50μm were also obtained. From these findings, the violet diode laser has good potential for cavity preparation. Therefore, the violet diode laser may become an effective tool for cavity preparation.

High-energy directly diode-pumped Q-switched 1617 nm Er:YAG laser at room temperature.

PubMed

Wang, Mingjian; Zhu, Liang; Chen, Weibiao; Fan, Dianyuan

2012-09-01

We describe high-energy Erbium-doped yttrium aluminum garnet (Er:YAG) lasers operating at 1617 nm, resonantly pumped using 1532 nm fiber-coupled laser diodes. A maximum continuous wave output power of 4.3 W at 1617 nm was achieved with an output coupler of 20% transmission under incident pump power of 29.7 W, resulting in an optical conversion of 14% with respect to the incident pump power. In Q-switched operation, the pulse energy of 11.8 mJ at 100 Hz pulse repetition frequency and 81 ns pulse duration was obtained. This energy is the highest pulse energy reported for a directly diode-pumped Q-switched Er:YAG laser operating at 1617 nm.

Design of 6 kw fiber-coupled system for semiconductor laser

NASA Astrophysics Data System (ADS)

Wu, Yulong; Dong, Zhiyong; Chen, Yongqi; Qi, Yunfei; Ding, Lushuang; Zhao, Pengfei; Zou, Yonggang; Xu, Li; Lin, Xuechun

2016-10-01

In this paper, we present the design of a 6 kW fiber-coupled laser diode system by using ZEMAX, and power scaling and fiber coupling techniques for high-power laser diode stacks were introduced in detail. Beams emitted from eight laser diode stacks comprised of four 960 W stacks with center wavelength of 938 nm and four 960 W stacks with center wavelength of 976 nm are combined and coupled into a standard fiber with a core diameter of 800 μm and numerical aperture of 0.22. Simulative result shows that the final power came out of the fiber could reach 6283.9 W, the fiber-coupling efficiency is 87%, and the brightness is 8.2 MW/ (cm2·sr).

Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, X., E-mail: xi.zeng@csem.ch, E-mail: dmitri.boiko@csem.ch; Stadelmann, T.; Grossmann, S.

2015-02-16

In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation when the slave MSLD is driven near free running threshold, and the peak output power is significantly enhanced with respect to free running configuration. When the slave laser is driven well above threshold, optical injection reduces the peak power. Using standard semiconductor laser rate equation model, we find that both power enhancement and suppression effects are the result of partial bleaching of the saturable absorber by externally injectedmore » photons.« less

Protocol for Determining Ultraviolet Light Emitting Diode (UV-LED) Fluence for Microbial Inactivation Studies.

PubMed

Kheyrandish, Ataollah; Mohseni, Madjid; Taghipour, Fariborz

2018-06-15

Determining fluence is essential to derive the inactivation kinetics of microorganisms and to design ultraviolet (UV) reactors for water disinfection. UV light emitting diodes (UV-LEDs) are emerging UV sources with various advantages compared to conventional UV lamps. Unlike conventional mercury lamps, no standard method is available to determine the average fluence of the UV-LEDs, and conventional methods used to determine the fluence for UV mercury lamps are not applicable to UV-LEDs due to the relatively low power output, polychromatic wavelength, and specific radiation profile of UV-LEDs. In this study, a method was developed to determine the average fluence inside a water suspension in a UV-LED experimental setup. In this method, the average fluence was estimated by measuring the irradiance at a few points for a collimated and uniform radiation on a Petri dish surface. New correction parameters were defined and proposed, and several of the existing parameters for determining the fluence of the UV mercury lamp apparatus were revised to measure and quantify the collimation and uniformity of the radiation. To study the effect of polychromatic output and radiation profile of the UV-LEDs, two UV-LEDs with peak wavelengths of 262 and 275 nm and different radiation profiles were selected as the representatives of typical UV-LEDs applied to microbial inactivation. The proper setup configuration for microorganism inactivation studies was also determined based on the defined correction factors.

Compact CH 4 sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

DOE PAGES

Dong, Lei; Li, Chunguang; Sanchez, Nancy P.; ...

2016-01-05

A tunable diode laser absorption spectroscopy-based methane sensor, employing a dense-pattern multi-pass gas cell and a 3.3 µm, CW, DFB, room temperature interband cascade laser (ICL), is reported. The optical integration based on an advanced folded optical path design and an efficient ICL control system with appropriate electrical power management resulted in a CH 4 sensor with a small footprint (32 x 20 x 17 cm 3) and low-power consumption (6 W). Polynomial and least-squares fit algorithms are employed to remove the baseline of the spectral scan and retrieve CH 4 concentrations, respectively. An Allan-Werle deviation analysis shows that themore » measurement precision can reach 1.4 ppb for a 60 s averaging time. Continuous measurements covering a seven-day period were performed to demonstrate the stability and robustness of the reported CH 4 sensor system.« less

Compact CH 4 sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Lei; Li, Chunguang; Sanchez, Nancy P.

A tunable diode laser absorption spectroscopy-based methane sensor, employing a dense-pattern multi-pass gas cell and a 3.3 µm, CW, DFB, room temperature interband cascade laser (ICL), is reported. The optical integration based on an advanced folded optical path design and an efficient ICL control system with appropriate electrical power management resulted in a CH 4 sensor with a small footprint (32 x 20 x 17 cm 3) and low-power consumption (6 W). Polynomial and least-squares fit algorithms are employed to remove the baseline of the spectral scan and retrieve CH 4 concentrations, respectively. An Allan-Werle deviation analysis shows that themore » measurement precision can reach 1.4 ppb for a 60 s averaging time. Continuous measurements covering a seven-day period were performed to demonstrate the stability and robustness of the reported CH 4 sensor system.« less

Compact self-Q-switched Tm:YLF laser at 1.91 μm

NASA Astrophysics Data System (ADS)

Zhang, B.; Li, L.; He, C. J.; Tian, F. J.; Yang, X. T.; Cui, J. H.; Zhang, J. Z.; Sun, W. M.

2018-03-01

We report self-Q-switching operation in a diode-pumped Tm:YLF bulk laser by exploiting saturable re-absorption under the quasi-three-level regime. Robust self-Q-switched pulse output at 1.91 μm in fundamental mode is demonstrated experimentally with 1.5 at.% doped Tm:YLF crystal. At maximum absorbed pump power of 4.5 W, the average output power and pulse energy are obtained as high as 610 mW and 29 μJ, respectively, with the corresponding slope efficiency of 22%. Pulse repetition rate is tunable in the range of 3-21 kHz with changing the pump power. The dynamics of self-Q-switching of Tm:YLF laser are discussed with the help of a rate equation model showing good agreement with the experiment. The compact self-Q-switched laser near 2 μm has potential application in laser radar systems for accurate wind velocity measurements.

Research and Development of Silicon Carbide (SiC) Junction Recovery Diodes for Picosecond Range, High Power Opening Switches

NASA Astrophysics Data System (ADS)

Grekhov, Igor V.

2002-07-01

This report results from a contract tasking Ioffe Institute as follows: The purpose of the proposed project is to develop, fabricate, test, and characterize silicon carbide power semiconductor opening switches operating in the picosecond range of switch time. Special SiC diode structures will be fabricated and investigated, including Junction Recovery Diodes (JRD). The operation of such diodes is founded on the superfast recovery of the junction's blocking ability after switching the device from forward to reverse bias conditions. Our estimations show that the parameters of JRD devices can be substantially improved in case of SiC devices, compared to both Si and GaAs capabilities. We expect i) to increase the speed of switch operation, the specific commutated power, and the operation frequency repetition; ii) to reduce the weight and size of pulse devices; and iii) to achieve better reliability of the devices due to the unique thermal conductivity and radiation hardness of SiC.

High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Carlin, D. B.; Ettenberg, M.

1989-01-01

A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

Large-area high-power VCSEL pump arrays optimized for high-energy lasers

NASA Astrophysics Data System (ADS)

Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

2012-06-01

Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes

NASA Astrophysics Data System (ADS)

Chen, Zimin; Zhuo, Yi; Tu, Wenbin; Ma, Xuejin; Pei, Yanli; Wang, Chengxin; Wang, Gang

2017-06-01

Various kinds of materials have been developed as transparent conductors for applications in semiconductor optoelectronic devices. However, there is a bottleneck that transparent conductive materials lose their transparency at ultraviolet (UV) wavelengths and could not meet the demands for commercial UV device applications. In this work, textured indium tin oxide (ITO) is grown and its potential to be used at UV wavelengths is explored. It is observed that the pronounced Burstein-Moss effect could widen the optical bandgap of the textured ITO to 4.7 eV. The average transmittance in UVA (315 nm-400 nm) and UVB (280 nm-315 nm) ranges is as high as 94% and 74%, respectively. The excellent optical property of textured ITO is attributed to its unique structural property. The compatibility of textured ITO thin films to the device fabrication is demonstrated on 368-nm nitride-based light emitting diodes, and the enhancement of light output power by 14.8% is observed compared to sputtered ITO.

Deformable mirror technologies at AOA Xinetics

NASA Astrophysics Data System (ADS)

Wirth, Allan; Cavaco, Jeffrey; Bruno, Theresa; Ezzo, Kevin M.

2013-05-01

AOA Xinetics (AOX) has been at the forefront of Deformable Mirror (DM) technology development for over two decades. In this paper the current state of that technology is reviewed and the particular strengths and weaknesses of the various DM architectures are presented. Emphasis is placed on the requirements for DMs applied to the correction of high-energy and high average power lasers. Mirror designs optimized for the correction of typical thermal lensing effects in diode pumped solid-state lasers will be detailed and their capabilities summarized. Passive thermal management techniques that allow long laser run times to be supported will also be discussed.

1.34 µm picosecond self-mode-locked Nd:GdVO4 watt-level laser

NASA Astrophysics Data System (ADS)

Han, Ming; Peng, Jiying; Li, Zuohan; Cao, Qiuyuan; Yuan, Ruixia

2017-01-01

With a simple linear configuration, a diode-pumped, self-mode-locked Nd:GdVO4 laser at 1.34 µm is experimentally demonstrated for the first time. Based on the aberrationless theory of self-focusing and thermal lensing effect, through designing and optimizing the resonator, a pulse width as short as 9.1 ps is generated at a repetition rate of 2.0 GHz and the average output power is 2.51 W. The optical conversion efficiency and the slope efficiency for the stable mode-locked operation are approximately 16.7% and 19.2%, respectively.

Sub-nanosecond Yb:KLu(WO₄)₂ microchip laser.

PubMed

Loiko, P; Serres, J M; Mateos, X; Yumashev, K; Yasukevich, A; Petrov, V; Griebner, U; Aguiló, M; Díaz, F

2016-06-01

A diode-pumped Yb:KLu(WO₄)₂ microchip laser passively Q-switched by a Cr⁴⁺:YAG saturable absorber generated a maximum average output power of 590 mW at 1031 nm with a slope efficiency of 55%. The pulse characteristics were 690 ps/47.6 μJ at a pulse repetition frequency of 12.4 kHz. The output beam had an excellent circular profile with M²<1.05. Yb:KLu(WO₄)₂ is very promising for ultrathin sub-ns microchip lasers.

Diode-pumped passively Q-switched Nd:YAG ceramic laser with a gold nanotriangles saturable absorber at 1 µm

NASA Astrophysics Data System (ADS)

Bai, Jinxi; Li, Ping; Chen, Xiaohan; Guo, Lei; Wang, Lili; Liu, Binghai

2017-08-01

Passively Q-switched Nd:YAG ceramic lasers at 1064 and 1123 nm are demonstrated based on a gold nanotriangles saturable absorber (GNTs-SA) for the first time. The maximum average output power reaches 226 mW at 1064 nm and 172 mW at 1123 nm with corresponding shortest pulse widths and maximum pulse repetition rates of (179 ns, 320 kHz) and (231 ns, 457 kHz), respectively. Our results prove that the GNTs-SA is a promising saturable absorber around the 1-µm region.

2000W high beam quality diode laser for direct materials processing

NASA Astrophysics Data System (ADS)

Qin, Wen-bin; Liu, You-qiang; Cao, Yin-hua; Gao, Jing; Pan, Fei; Wang, Zhi-yong

2011-11-01

This article describes high beam quality and kilowatt-class diode laser system for direct materials processing, using optical design software ZEMAX® to simulate the diode laser optical path, including the beam shaping, collimation, coupling, focus, etc.. In the experiment, the diode laser stack of 808nm and the diode laser stack of 915nm were used for the wavelength coupling, which were built vertical stacks up to 16 bars. The threshold current of the stack is 6.4A, the operating current is 85A and the output power is 1280W. Through experiments, after collimating the diode laser beam with micro-lenses, the fast axis BPP of the stack is less than 60mm.mrad, and the slow-axis BPP of the stack is less than 75mm.mrad. After shaping the laser beam and improving the beam quality, the fast axis BPP of the stack is still 60mm.mrad, and the slow-axis BPP of the stack is less than 19mm.mrad. After wavelength coupling and focusing, ultimately the power of 2150W was obtained, focal spot size of 1.5mm * 1.2mm with focal length 300mm. The laser power density is 1.2×105W/cm2, and that can be used for metal remelting, alloying, cladding and welding. The total optical coupling conversion efficiency is 84%, and the total electrical - optical conversion efficiency is 50%.

5 mW parallel-connected resonant-tunnelling diode oscillator

NASA Technical Reports Server (NTRS)

Stephan, K. D.; Wong, S.-C.; Brown, E. R.; Molvar, K. M.; Calawa, A. R.; Manfra, M. J.

1992-01-01

A new type of resonant-tunneling diode (RTD) oscillator that generates 5 mW at 1.18 GHz is reported. This result was obtained by connecting in parallel 25 individual diodes designed for such a connection. This experiment demonstrates that RTDs can successfully be used in a chip-level power-combining circuit.

Holographic injection locking of a broad area laser diode via a photorefractive thin-film device.

PubMed

van Voorst, P D; de Wit, M R; Offerhaus, H L; Tay, S; Thomas, J; Peyghambarian, N; Boller, K-J

2007-12-24

We demonstrate locking of a high power broad area laser diode to a single frequency using holographic feedback from a photorefractive polymer thin-film device for the first time. A four-wave mixing setup is used to generate feedback for the broad area diode at the wavelength of the single frequency source (Ti:Sapphire laser) while the spatial distribution adapts to the preferred profile of the broad area diode. The result is an injection-locked broad area diode emitting with a linewidth comparable to the Ti:Sapphire laser.

High-power diode-side-pumped rod Tm:YAG laser at 2.07 μm.

PubMed

Wang, Caili; Niu, Yanxiong; Du, Shifeng; Zhang, Chao; Wang, Zhichao; Li, Fangqin; Xu, Jialin; Bo, Yong; Peng, Qinjun; Cui, Dafu; Zhang, Jingyuan; Xu, Zuyan

2013-11-01

We report a high-power diode-laser (LD) side-pumped rod Tm:YAG laser of around 2 μm. The laser was water-cooled at 8°C and yielded a maximum output power of 267 W at 2.07 μm, which is the highest output power for an all solid-state cw 2.07 μm rod Tm:YAG laser reported as far as we know. The corresponding optical-optical conversion efficiency was 20.7%, and the slope efficiency was about 29.8%, respectively.

An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz

NASA Technical Reports Server (NTRS)

Siles, Jose V.; Mehdi, Imran; Schlecht, Erich T.; Gulkis, Samuel; Chattopadhyay, Goutam; Lin, Robert H.; Lee, Choonsup; Gill, John J.; Thomas, Bertrand; Maestrini, Alain E.

2013-01-01

Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (˜20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.

Electronic safing of a diode laser arm-fire device

NASA Astrophysics Data System (ADS)

Willis, Kenneth E.; Chang, Suk T.

1993-06-01

The paper describes a rocket motor arm-fire device which uses a diode laser protected from unintentional function with a specially designed RF frequency attenuating coupler (RFAC). The RFAC transfers power into a Faraday cage via magnetic flux, thereby protecting the diode, its drive circuit, and the pyrotechnic from all electromagnetic and electrostatic hazards. Diagrams of the diode laser arm-fire device are presented together with a diagram illustrating the RFAC principle of operation.

Laser induced white lighting of tungsten filament

NASA Astrophysics Data System (ADS)

Strek, W.; Tomala, R.; Lukaszewicz, M.

2018-04-01

The sustained bright white light emission of thin tungsten filament was induced under irradiation with focused beam of CW infrared laser diode. The broadband emission centered at 600 nm has demonstrated the threshold behavior on excitation power. Its intensity increased non-linearly with excitation power. The emission occurred only from the spot of focused beam of excitation laser diode. The white lighting was accompanied by efficient photocurrent flow and photoelectron emission which both increased non-linearly with laser irradiation power.

High-power and highly efficient diode-cladding-pumped Ho3+-doped silica fiber lasers.

PubMed

Jackson, Stuart D; Bugge, Frank; Erbert, Götz

2007-11-15

We demonstrate high-power operation from a singly Ho3+-doped silica fiber laser that is cladding pumped directly with diode lasers operating at 1150 nm. Internal slope efficiencies approaching the Stokes limit were produced, and the maximum output power was 2.2W. This result was achieved using a low Ho3+-ion concentration and La3+-ion codoping, which together limit the transfer of energy between excited Ho3+ ions.

Numerical and experimental determination of weld pool shape during high-power diode laser welding

NASA Astrophysics Data System (ADS)

Klimpel, Andrzej; Lisiecki, Aleksander; Szymanski, Andrzej; Hoult, Anthony P.

2003-10-01

In this paper, results of investigations on the shape of weld pool during High Power Diode Laser (HPDL) welding are presented. The results of tests showed that the shape of weld pool and mechanism of laser welding with a rectangular pattern of 808 nm laser radiation differs distinctly from previous laser welding mechanisms. For all power densities the conduction mode welds were observed and weld pool geometry depends significantly on the welding parameters.

An all-silicon passive optical diode.

PubMed

Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

2012-01-27

A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

Improving Reliability of High Power Quasi-CW Laser Diode Arrays Operating in Long Pulse Mode

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Barnes, Bruce W.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.; Baker, Nathaniel R.

2006-01-01

Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data of the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime.

Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%

NASA Astrophysics Data System (ADS)

Ladugin, M. A.; Marmalyuk, A. A.; Padalitsa, A. A.; Telegin, K. Yu; Lobintsov, A. V.; Sapozhnikov, S. M.; Danilov, A. I.; Podkopaev, A. V.; Simakov, V. A.

2017-08-01

The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%.

Dye-enhanced protein solders and patches in laser-assisted tissue welding.

PubMed

Small, W; Heredia, N J; Maitland, D J; Da Silva, L B; Matthews, D L

1997-01-01

This study examines the use of dye-enhanced protein bonding agents in 805 nm diode laser-assisted tissue welding. A comparison of an albumin liquid solder and collagen solid-matrix patches used to repair arteriotomies in an in vitro porcine model is presented. Extrinsic bonding media in the form of solders and patches have been used to enhance the practice of laser tissue welding. Preferential absorption of the laser wavelength has been achieved by the incorporation of chromophores. Both the solder and the patch included indocyanine green dye (ICG) to absorb the 805 nm continuous-wave diode laser light used to perform the welds. Solder-mediated welds were divided into two groups (high power/short exposure and low power/long exposure), and the patches were divided into three thickness groups ranging from 0.1 to 1.3 mm. The power used to activate the patches was constant, but the exposure time was increased with patch thickness. Burst pressure results indicated that solder-mediated and patched welds yielded similar average burst strengths in most cases, but the patches provided a higher success rate (i.e., more often exceeded 150 mmHg) and were more consistent (i.e., smaller standard deviation) than the solder. The strongest welds were obtained using 1.0-1.3 mm thick patches, while the high power/short exposure solder group was the weakest. Though the solder and patches yielded similar acute weld strengths, the solid-matrix patches facilitated the welding process and provided consistently strong welds. The material properties of the extrinsic agents influenced their performance.

NASA seeking high-power 60-GHz IMPATT diodes

NASA Technical Reports Server (NTRS)

Haugland, E. J.

1984-01-01

Recent progress in the development of high-power 60 GHz GaAs IMPATT diodes for communication links with high-data-rate satellites is discussed. One of the advantages of GaAs over Si as the material for the diodes are that GaAs is likely to have a higher output and efficiency than Si despite recent advances in Si technology. It is therefore in GaAs technology that research is currently concentrating. Some of the design strategies of the various companies working on the technology are described, including a pill process, MOCVD growth, and the use of diethy zinc as a dopant. Reliability testing of the diodes will be performed by NASA. Some of the alternatives to solid state amplifiers are discussed, including optical and traveling wave tube technology (TWT).

The characteristics of Kerr-lens mode-locked self-Raman Nd:YVO4 1176 nm laser

NASA Astrophysics Data System (ADS)

Li, Zuohan; Peng, Jiying; Yao, Jianquan; Han, Ming

2017-03-01

In this paper we report on a compact and feasible dual-concave cavity CW Kerr-lens mode-locked self-Raman Nd:YVO4 laser. A self-starting diode-pumped picosecond Nd:YVO4 1176 nm laser is demonstrated without any additional components, where the stimulated Stokes Raman scattering and Kerr-lens-induced mode locking are operated in the same crystal. With an incident pump power of 12 W, the average output power at 1176 nm is up to 643 mW. Meanwhile, the repetition rate and the pulse width of the fundamental laser are measured to be 1.53 GHz and 8.6 ps, respectively. In addition, the yellow laser output at 588 nm is realized by frequency doubling with a LiB3O5 crystal.

A solar module fabrication process for HALE solar electric UAV's

NASA Astrophysics Data System (ADS)

Carey, P. G.; Aceves, R. C.; Colella, N. J.; Williams, K. A.; Sinton, R. A.; Glenn, G. S.

1994-12-01

We describe a fabrication process used to manufacture high power-to-weight-ratio flexible solar array modules for use on high-altitude-long-endurance (HALE) solar-electric unmanned air vehicles (UAV's). These modules have achieved power-to-weight ratios of 315 and 396 W/kg for 150 micron-thick monofacial and 110 micron-thick bifacial silicon solar cells, respectively. These calculations reflect average module efficiencies of 15.3% (150 micron) and 14.7% (110 micron) obtained from electrical tests performed by Spectrolab, Inc. under AMO global conditions at 25 C, and include weight contributions from all module components (solar cells, lamination material, bypass diodes, interconnect wires, and adhesive tape used to attach the modules to the wing). The fabrication, testing, and performance of 32 sq m of these modules is described.

Microwave generation enhancement of X-band CRBWO by use of coaxial dual annular cathodes

NASA Astrophysics Data System (ADS)

Teng, Yan; Sun, Jun; Chen, Changhua; Shao, Hao

2013-07-01

This paper presents an approach that greatly enhances both the output power and the conversion efficiency of the coaxial relativistic backward wave oscillator (CRBWO) by using coaxial dual annular cathodes, which increases the diode current rather than the diode voltage. The reasons for the maladjustment of CRBWO under a high diode voltage are analyzed theoretically. It is found that by optimization of the diode structure, the shielding effect of the space charge of the outer beams on the inner cathode can be alleviated effectively and dual annular beams with the same kinetic energy can be explosively emitted in parallel. The coaxial reflector can enhance the conversion efficiency by improving the premodulation of the beams. The electron dump on the inner conductor ensures that the electron beams continue to provide kinetic energy to the microwave output until they vanish. Particle-in-cell (PIC) simulation results show that generation can be enhanced up to an output power level of 3.63 GW and conversion efficiency of 45% at 8.97 GHz under a diode voltage of 659 kV and current of 12.27 kA. The conversion efficiency remains above 40% and the output frequency variation is less than 100 MHz over a voltage range of more than 150 kV. Also, the application of the coaxial dual annular cathodes means that the diode impedance is matched to that of the transmission line of the accelerators. This impedance matching can effectively eliminate power reflection at the diode, and thus increase the energy efficiency of the entire system.

High-efficiency, 154  W CW, diode-pumped Raman fiber laser with brightness enhancement.

PubMed

Glick, Yaakov; Fromzel, Viktor; Zhang, Jun; Ter-Gabrielyan, Nikolay; Dubinskii, Mark

2017-01-20

We demonstrate a high-power, high-efficiency Raman fiber laser pumped directly by laser diode modules at 978 nm. 154 W of CW power were obtained at a wavelength of 1023 nm with an optical to optical efficiency of 65%. A commercial graded-index (GRIN) core fiber acts as the Raman fiber in a power oscillator configuration, which includes spectral selection to prevent generation of the second Stokes. In addition, brightness enhancement of the pump beam by a factor of 8.4 is attained due to the Raman gain distribution profile in the GRIN fiber. To the best of our knowledge this is the highest power and highest efficiency Raman fiber laser demonstrated in any configuration allowing brightness enhancement (i.e., in either cladding-pumped configuration or with GRIN fibers, excluding step-index core pumped), regardless of pumping scheme (i.e., either diode pumped or fiber laser pumped).

All-solid-state cw frequency-doubling Nd:YLiF4/LBO blue laser with 4.33 W output power at 454 nm under in-band diode pumping at 880 nm.

PubMed

Lü, Yanfei; Zhang, Xihe; Cheng, Weibo; Xia, Jing

2010-07-20

We generated efficient blue laser output at 454 nm by intracavity frequency doubling of a continuous-wave (cw) diode-pumped Nd:YLiF(4) (Nd:YLF) laser at 908 nm based on the (4)F(3/2)-(4)I(9/2) transition. With 32.8 W of incident pump power at 880 nm and the frequency-doubling crystal LiB(3)O(5), a level as high as 4.33 W of cw output power at 454 nm is achieved, corresponding to an optical conversion efficiency of 13.2% with respect to the incident pump power. To the best of our knowledge, this is the first blue laser at 454 nm generated by intracavity frequency doubling of a diode-pumped Nd:YLF.

Basic studies on laser-assisted phacoemulsification using diode-pumped Er:YAG laser

NASA Astrophysics Data System (ADS)

Hausladen, Florian; Wurm, Holger; Stock, Karl

2016-03-01

The aim of this study was to determine the potential of a novel diode-pumped Er:YAG laser for phacoemulsification in basic experimental investigations. An appropriate experimental setup was created, including a translation stage for sample movement, a sample holder, a water spray for sample humidification and a surgical microscope with a CCD camera for video documentation. The analysis of the laser cuts and histological sections was done by light microscopy. As samples porcine eye lenses hardened by formalin were used. In ablation experiments with different spot diameters and radiant powers and a constant repetition rate νr = 200 Hz the maximum ablation depths of (4.346 +/- 0.044) mm have reached at (Ø = 480 μm, Φ = 24.15 W) with a maximum extend of thermal damage of (0.165 +/- 0.030) mm. The average ablation efficiency is 0.241 mm3/J. With a spot diameter of 308 μm the maximum ablation depth is (4.238 +/- 0.040) mm at 24.65 W with a mean ablation efficiency of 0.293 mm3/J. The extend of the thermally damaged region is (0.171 +/- 0.024) mm at this laser power. Using a sapphire cylinder with a diameter of 412 μm (length 38.5 mm) in direct tissue contact with water spray for sample humidification the ablation depth reaches (1.017 +/- 0.074) mm at 4.93 W and (1.840 +/- 0.092) mm at 9.87 W with a mean efficiency of 0.261 mm3/J. A thermal damage zone of (0.064 +/-0.024) mm at 9.87 W was measured. Additionally, at this high power, a progressive contamination and destruction of the cylinder end facet was observed. In conclusion, the investigations show that the diode-pumped Er:YAG laser has considerable potential for cataract surgery.

Comparison for 1030nm DBR-tapered diode lasers with 10W central lobe output power and different grating layouts for wavelength stabilization and lateral spatial mode filtering

NASA Astrophysics Data System (ADS)

Müller, André; Zink, Christof; Fricke, Jörg; Bugge, Frank; Erbert, Götz; Sumpf, Bernd; Tränkle, Günther

2018-02-01

1030 nm DBR tapered diode lasers with different lateral layouts are presented. The layout comparison includes lasers with straight waveguide and grating, tapered waveguide and straight grating, and straight waveguide and tapered grating. The lasers provide narrowband emission and optical output powers up to 15 W. The highest diffraction-limited central lobe output power of 10.5 W is obtained for lasers with tapered gratings only. Small variations in central lobe output power with RW injection current density also indicate the robustness of that layout. For lasers with tapered waveguides, high RW injection current densities up to 150 A/mm2 have to be applied in order to obtain high central lobe output powers. Lasers with straight waveguide and grating operate best at low RW injection current densities, 50 A/mm2 applied in this study. Using the layout optimizations discussed in this study may help to increase the application potential of DBR tapered diode lasers.

Tunnel injection transit-time diodes for W-band power generation

NASA Technical Reports Server (NTRS)

Kidner, C.; Eisele, H.; Haddad, G. I.

1992-01-01

GaAs p(+ +)n(+)n(-)n(+) single-drift tunnel injection transit-time (TUNNETT) diodes for W-band operation have been successfully designed and tested. An output power of 32 mW at 93.5 GHz with a dc to RF conversion efficiency of 2.6 percent was obtained. The oscillations have a clean spectrum in a conventional waveguide cavity.

Power degradation and reliability study of high-power laser bars at quasi-CW operation

NASA Astrophysics Data System (ADS)

Zhang, Haoyu; Fan, Yong; Liu, Hui; Wang, Jingwei; Zah, Chungen; Liu, Xingsheng

2017-02-01

The solid state laser relies on the laser diode (LD) pumping array. Typically for high peak power quasi-CW (QCW) operation, both energy output per pulse and long term reliability are critical. With the improved bonding technique, specially Indium-free bonded diode laser bars, most of the device failures were caused by failure within laser diode itself (wearout failure), which are induced from dark line defect (DLD), bulk failure, point defect generation, facet mirror damage and etc. Measuring the reliability of LD under QCW condition will take a rather long time. Alternatively, an accelerating model could be a quicker way to estimate the LD life time under QCW operation. In this report, diode laser bars were mounted on micro channel cooler (MCC) and operated under QCW condition with different current densities and junction temperature (Tj ). The junction temperature is varied by modulating pulse width and repetition frequency. The major concern here is the power degradation due to the facet failure. Reliability models of QCW and its corresponding failures are studied. In conclusion, QCW accelerated life-time model is discussed, with a few variable parameters. The model is compared with CW model to find their relationship.

Power scaling of laser diode pumped Pr3+:LiYF4 cw lasers: efficient laser operation at 522.6 nm, 545.9 nm, 607.2 nm, and 639.5 nm.

PubMed

Gün, Teoman; Metz, Philip; Huber, Günter

2011-03-15

We report efficient cw laser operation of laser diode pumped Pr(3+)-doped LiYF4 crystals in the visible spectral region. Using two InGaN laser diodes emitting at λ(P)=443.9 nm with maximum output power of 1 W each and a 2.9-mm-long crystal with a doping concentration of 0.5%, output powers of 938 mW, 418 mW, 384 mW, and 773 mW were achieved for the laser wavelengths 639.5 nm, 607.2 nm, 545.9 nm, and 522.6 nm, respectively. The maximum absorbed pump powers were approximately 1.5 W, resulting in slope efficiencies of 63.6%, 32.0%, 52.1%, and 61.5%, as well as electro-optical efficiencies of 9.4%, 4.2%, 3.8%, and 7.7%, respectively. Within these experiments, laser diode-pumped laser action at 545.9 nm was demonstrated for what is believed to be the first time.

Comparative study of two intraoral laser techniques for soft tissue surgery

NASA Astrophysics Data System (ADS)

Swick, Michael D.; Richter, Alexander

2003-06-01

Historically, 810nm has been the predominant wavelength used for intraoral surgery, when diode lasers have been discussed, due to their large numbers in the market place. The techniques used intraorally with the 810nm diode have been relatively similar in most cases. Low powers, 1 or 2 watts, using continuous wave, are employed. The purpose of this study is to compare the thermal damage of the technique of using continuous wave at low powers, to using higher powers with a pulse mode and water for coolant, with the 980nm diode wavelength. During the study the laser fiber was held immobile eliminating surgical manipulation as an error. The resultant histology proves, while the volume of vaporization dramatically increases, thus giving the clinician the ability to reduce the time for destructive conduction of excess heat for a given procedure, the amount of coagulation actually decreases in width and depth. As an added benefit charring, which has been implicated in delayed healing is virtually eliminated. This evidence, coupled with excellent clinical results, lends validity to the use of pulsed higher powers and water coolant for the 980nm diode laser.

2.36 J, 50 Hz nanosecond pulses from a diode side-pumped Nd:YAG MOPA system

NASA Astrophysics Data System (ADS)

Li, Chaoyang; Lu, Chengqiang; Li, Chuan; Yang, Ning; Li, Ye; Yang, Zhen; Han, Song; Shi, Junfeng; Zhou, Zewu

2017-07-01

We report on a high-energy high-repetition-rate nanosecond Nd:YAG main oscillator power amplifier (MOPA) system. Maximum output pulse energy of 2.36 J with duration of 9.4 ns at 50 Hz has been achieved. The master oscillator was a LD side-pumped electro-optical Q-switched Nd:YAG rod laser adopting unstable cavity with variable reflectivity mirror (VRM). It delivered a pulse train with energy up to 180 mJ and pulse duration of 10.7 ns. The near-field pattern demonstrated a nearly super Gaussian flat top profile. In the amplification stage, the pulse was boosted via double-pass two Nd:YAG rod amplifiers. Maximum pulse energy was obtained at the peak pump power of 37.5 kW, corresponding to an optical-optical conversion efficiency of 25.2%. The correlative peak power was deduced to be 251 MW. We also presented the result of 100 Hz nanosecond laser with average output power of >100 W.

Piezoelectric-nanowire-enabled power source for driving wireless microelectronics.

PubMed

Xu, Sheng; Hansen, Benjamin J; Wang, Zhong Lin

2010-10-19

Harvesting energy from irregular/random mechanical actions in variable and uncontrollable environments is an effective approach for powering wireless mobile electronics to meet a wide range of applications in our daily life. Piezoelectric nanowires are robust and can be stimulated by tiny physical motions/disturbances over a range of frequencies. Here, we demonstrate the first chemical epitaxial growth of PbZr(x)Ti(1-x)O(3) (PZT) nanowire arrays at 230 °C and their application as high-output energy converters. The nanogenerators fabricated using a single array of PZT nanowires produce a peak output voltage of ~0.7 V, current density of 4 μA cm(-2) and an average power density of 2.8 mW cm(-3). The alternating current output of the nanogenerator is rectified, and the harvested energy is stored and later used to light up a commercial laser diode. This work demonstrates the feasibility of using nanogenerators for powering mobile and even personal microelectronics.

Temperature issues with white laser diodes, calculation and approach for new packages

NASA Astrophysics Data System (ADS)

Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

2015-01-01

Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

Method and system for powering and cooling semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Telford, Steven J; Ladran, Anthony S

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Diode Laser Measurements of Concentration and Temperature in Microgravity Combustion

NASA Technical Reports Server (NTRS)

Silver, Joel A.; Kane, Daniel J.

1999-01-01

Diode laser absorption spectroscopy provides a direct method of determinating species concentration and local gas temperature in combustion flames. Under microgravity conditions, diode lasers are particularly suitable, given their compact size, low mass and low power requirements. The development of diode laser-based sensors for gas detection in microgravity is presented, detailing measurements of molecular oxygen. Current progress of this work and future application possibilities for these methods on the International Space Station are discussed.

Back-streaming ion beam measurements in a Self Magnetic Insulated (SMP) electron diode

NASA Astrophysics Data System (ADS)

Mazarakis, Michael; Johnston, Mark; Kiefer, Mark; Leckbee, Josh; Webb, Timothy; Bennett, Nichelle; Droemer, Darryl; Welch, Dale; Nielsen, Dan; Ziska, Derek; Wilkins, Frank; Advance radiography department Team

2014-10-01

A self-magnetic pinch diode (SMP) is presently the electron diode of choice for high energy flash x-ray radiography utilizing pulsed power drivers. The Sandia National Laboratories RITS accelerator is presently fit with an SMP diode that generates very small electron beam spots. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulse of six 1.3 MV inductively insulated cavities. The diode's anode is made of high Z metal in order to produce copious and energetic flash x-rays for radiographic imaging of high areal density objects. In any high voltage inductive voltage adder (IVA) utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the anode-cathode (A-K) gap is problematic. This is even more difficult in an SMP diode where the A-K gap is very small (~1 cm) and the diode region very hostile. We are currently measuring the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip. We then are evaluating the A-K gap voltage by ion time of flight measurements supplemented with filtered Rogowski coils. Sandia is a multiprogram laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under Contract No. DE- AC04-94AL850.

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

NASA Technical Reports Server (NTRS)

Boric-Lubecke, Olga; Pan, Dee-Son; Itoh, Tatsuo

1995-01-01

Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.

Diode-pumped cw Nd:YAG three-level laser at 869 nm.

PubMed

Lü, Yanfei; Xia, Jing; Cheng, Weibo; Chen, Jifeng; Ning, Guobin; Liang, Zuoliang

2010-11-01

We report for the first time (to our knowledge) a diode-pumped Nd:YAG laser emitting at 869 nm based on the (4)F(3/2)-(4)I(9/2) transition, generally used for a 946 nm emission. Power of 453 mW at 869 nm has been achieved in cw operation with a fiber-coupled laser diode emitting 35.4 W at 809 nm. Intracavity second-harmonic generation in the cw mode has also been demonstrated with power of 118 mW at 435 nm by using a BiB(3)O(6) nonlinear crystal. In our experiment, we used a LiNbO(3) crystal lens to complement the thermal lens of the laser rod, and we obtained good beam quality and high output power stability.

2.4 μm diode-pumped Dy2+:CaF2 laser

NASA Astrophysics Data System (ADS)

Švejkar, Richard; Papashvili, Alexander G.; Šulc, Jan; Němec, Michal; Jelínková, Helena; Doroshenko, Maxim E.; Batygov, Sergei H.; Osiko, Vyacheslav V.

2018-01-01

In this work, a cryogenic cooled, longitudinal diode-pumped Dy2+ :CaF2 laser was investigated for the first time. The temperature dependence of the spectroscopy and the laser properties of Dy2+ :CaF2 are presented. The tested Dy2+ :CaF2 crystal was a longitudinal pump in a near-IR region (926 nm) by laser diode radiation. The maximal mean output power and slope efficiency at 78 K during the pulse regime of the laser were 57.5 mW and 7%, respectively. Furthermore, the CW regime was successfully tested and a maximum output power of 0.37 W was obtained for the absorbed pumping power 5.7 W. The emission laser wavelength was 2367 nm.

High efficiency, linearly polarized, directly diode-pumped Er:YAG laser at 1617  nm.

PubMed

Yu, Zhenzhen; Wang, Mingjian; Hou, Xia; Chen, Weibiao

2014-12-01

An efficient, directly diode-pumped Er:YAG laser at 1617 nm was demonstrated. A folding mirror with high reflectivity for the s-polarized light at the laser wavelength was used to achieve a linearly polarized laser. A maximum continuous-wave output power of 7.73 W was yielded under incident pump power of 50.57 W, and the optical conversion efficiency with respect to incident pump power was ∼15.28%, which was the highest optical conversion efficiency with directly diode-pumped Er:YAG lasers up to now; in Q-switched operation, the maximum pulse energy of 7.82 mJ was generated with pulse duration of about 80 ns at a pulse repetition frequency of 500 Hz.

Efficient yellow-green light generation at 561 nm by frequency-doubling of a QD-FBG laser diode in a PPLN waveguide.

PubMed

Fedorova, Ksenia A; Sokolovskii, Grigorii S; Khomylev, Maksim; Livshits, Daniil A; Rafailov, Edik U

2014-12-01

A compact high-power yellow-green continuous wave (CW) laser source based on second-harmonic generation (SHG) in a 5% MgO doped periodically poled congruent lithium niobate (PPLN) waveguide crystal pumped by a quantum-dot fiber Bragg grating (QD-FBG) laser diode is demonstrated. A frequency-doubled power of 90.11 mW at the wavelength of 560.68 nm with a conversion efficiency of 52.4% is reported. To the best of our knowledge, this represents the highest output power and conversion efficiency achieved to date in this spectral region from a diode-pumped PPLN waveguide crystal, which could prove extremely valuable for the deployment of such a source in a wide range of biomedical applications.

An efficient continuous-wave 591 nm light source based on sum-frequency mixing of a diode pumped Nd:GdVO4-Nd:CNGG laser

NASA Astrophysics Data System (ADS)

Zhao, Y. D.; Liu, J. H.

2013-08-01

We report a laser architecture to obtain continuous-wave (CW) yellow-orange light sources at the 591 nm wavelength. An 808 nm diode pumped a Nd:GdVO4 crystal emitting at 1063 nm. A part of the pump power was then absorbed by the Nd:CNGG crystal. The remaining pump power was used to pump a Nd:CNGG crystal emitting at 1329 nm. Intracavity sum-frequency mixing at 1063 and 1329 nm was then realized in a LiB3O5 (LBO) crystal to reach the yellow-orange radiation. We obtained a CW output power of 494 mW at 591 nm with a pump laser diode emitting 17.8 W at 808 nm.

A Self-Synchronized Optoelectronic Oscillator based on an RTD Photo-Detector and a Laser Diode

PubMed Central

Romeira, Bruno; Seunarine, Kris; Ironside, Charles N.; Kelly, Anthony E.; Figueiredo, José M. L.

2013-01-01

We propose and demonstrate a simple and stable low-phase noise optoelectronic oscillator (OEO) that uses a laser diode, an optical fiber delay line and a resonant tunneling diode (RTD) free-running oscillator that is monolithic integrated with a waveguide photo-detector. The RTD-OEO exhibits single-side band phase noise power below −100 dBc/Hz with more than 30 dB noise suppression at 10 kHz from the center free-running frequency for fiber loop lengths around 1.2 km. The oscillator power consumption is below 0.55 W, and can be controlled either by the injected optical power or the fiber delay line. The RTD-OEO stability is achieved without using other high-speed optical/optoelectronic components and amplification. PMID:23814452

Intracavity frequency doubling of a continuous-wave, diode-laser-pumped neodymium lanthanum scandium borate laser.

PubMed

Meyn, J P; Huber, G

1994-09-15

Neodymium-doped lanthanum scandium borate [Nd:LaSc(3)(BO(3))(4)] is a new material for efficient and compact diode-pumped solid-state lasers. A simple plane-plane 3-mm-long resonator is formed by a coated Nd(10%):LaSc(3)(BO(3))(4) crystal and a coated potassium titanyl phosphate (KTP) crystal. The second-harmonic output power at 531 nm is 522 mW at 2.05-W incident pump power of the diode laser. The corresponding optical efficiency is 25%, and the conversion efficiency from the fundamental to the second harmonic is 55%. The wellknown chaotic power fluctuations of intracavity frequency-doubled lasers (green problem) are avoided by use of a short KTP crystal, between 0.5 and 2 mm in length.

75 FR 51931 - Airworthiness Directives; Dassault-Aviation Model FALCON 7X Airplanes

Federal Register 2010, 2011, 2012, 2013, 2014

2010-08-24

... root cause: A leakage failure mode of Transient Voltage Suppressor (TVS) diodes used on Power... condition is a leakage failure mode of TVS diodes used on PDCU cards or GCU cards in the PPDB, which in... discovery of a common root cause: A leakage failure mode of Transient Voltage Suppressor (TVS) diodes used...

Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry

PubMed Central

2017-01-01

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples. PMID:28632988

Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry.

PubMed

Yung, Yeni P; Wickramasinghe, Raveendra; Vaikkinen, Anu; Kauppila, Tiina J; Veryovkin, Igor V; Hanley, Luke

2017-07-18

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples.

100W high-brightness multi-emitter laser pump

NASA Astrophysics Data System (ADS)

Duesterberg, Richard; Xu, Lei; Skidmore, Jay A.; Guo, James; Cheng, Jane; Du, Jihua; Johnson, Brad; Vecht, David L.; Guerin, Nicolas; Huang, Benlih; Yin, Dongliang; Cheng, Peter; Raju, Reddy; Lee, Kong Weng; Cai, Jason; Rossin, Victor; Zucker, Erik P.

2011-03-01

We report results of a spatially-multiplexed broad area laser diode platform designed for efficient pumping of fiber lasers or direct-diode systems. Optical output power in excess of 100W from a 105μm core, 0.15NA fiber is demonstrated with high coupling efficiency. The compact form factor and low thermal resistance enable tight packing densities needed for kW-class fiber laser systems. Broad area laser diodes have been optimized to reduce near- and far-field performance and prevent blooming without sacrificing other electro-optic parameters. With proper lens optimization this produces ~5% increase in coupling / wall plug efficiency for our design. In addition to performance characteristics, an update on long term reliability testing of 9XX nm broad area laser diode is provided that continues to show no wear out under high acceleration. Under nominal operating conditions of 12W ex-facet power at 25C, the diode mean time to failure (MTTF) is forecast to be ~ 480 kh.

Cavity-Enhanced Raman Spectroscopy of Natural Gas with Optical Feedback cw-Diode Lasers.

PubMed

Hippler, Michael

2015-08-04

We report on improvements made on our previously introduced technique of cavity-enhanced Raman spectroscopy (CERS) with optical feedback cw-diode lasers in the gas phase, including a new mode-matching procedure which keeps the laser in resonance with the optical cavity without inducing long-term frequency shifts of the laser, and using a new CCD camera with improved noise performance. With 10 mW of 636.2 nm diode laser excitation and 30 s integration time, cavity enhancement achieves noise-equivalent detection limits below 1 mbar at 1 bar total pressure, depending on Raman cross sections. Detection limits can be easily improved using higher power diodes. We further demonstrate a relevant analytical application of CERS, the multicomponent analysis of natural gas samples. Several spectroscopic features have been identified and characterized. CERS with low power diode lasers is suitable for online monitoring of natural gas mixtures with sensitivity and spectroscopic selectivity, including monitoring H2, H2S, N2, CO2, and alkanes.

Power supply conditioning circuit

NASA Technical Reports Server (NTRS)

Primas, L. E.; Loveland, R.

1987-01-01

A power supply conditioning circuit that can reduce Periodic and Random Deviations (PARD) on the output voltages of dc power supplies to -150 dBV from dc to several KHz with no measurable periodic deviations is described. The PARD for a typical commercial low noise power supply is -74 dBV for frequencies above 20 Hz and is often much worse at frequencies below 20 Hz. The power supply conditioning circuit described here relies on the large differences in the dynamic impedances of a constant current diode and a zener diode to establish a dc voltage with low PARD. Power supplies with low PARD are especially important in circuitry involving ultrastable frequencies for the Deep Space Network.

Development and optimization of a diode laser for photodynamic therapy.

PubMed

Lim, Hyun Soo

2011-01-01

This study demonstrated the development of a laser system for cancer treatment with photodynamic therapy (PDT) based on a 635 nm laser diode. In order to optimize efficacy in PDT, the ideal laser system should deliver a homogeneous nondivergent light energy with a variable spot size and specific wavelength at a stable output power. We developed a digital laser beam controller using the constant current method to protect the laser diode resonator from the current spikes and other fluctuations, and electrical faults. To improve the PDT effects, the laser system should deliver stable laser energy in continuous wave (CW), burst mode and super burst mode, with variable irradiation times depending on the tumor type and condition. The experimental results showed the diode laser system described herein was eminently suitable for PDT. The laser beam was homogeneous without diverging and the output power increased stably and in a linear manner from 10 mW to 1500 mW according to the increasing input current. Variation between the set and delivered output was less than 7%. The diode laser system developed by the author for use in PDT was compact, user-friendly, and delivered a stable and easily adjustable output power at a specific wavelength and user-set emission modes.

Development and optimization of a diode laser for photodynamic therapy

PubMed Central

Lim, Hyun Soo

2011-01-01

Background and Aims: This study demonstrated the development of a laser system for cancer treatment with photodynamic therapy (PDT) based on a 635 nm laser diode. In order to optimize efficacy in PDT, the ideal laser system should deliver a homogeneous nondivergent light energy with a variable spot size and specific wavelength at a stable output power. Materials and Methods: We developed a digital laser beam controller using the constant current method to protect the laser diode resonator from the current spikes and other fluctuations, and electrical faults. To improve the PDT effects, the laser system should deliver stable laser energy in continuous wave (CW), burst mode and super burst mode, with variable irradiation times depending on the tumor type and condition. Results and Comments: The experimental results showed the diode laser system described herein was eminently suitable for PDT. The laser beam was homogeneous without diverging and the output power increased stably and in a linear manner from 10 mW to 1500 mW according to the increasing input current. Variation between the set and delivered output was less than 7%. Conclusions: The diode laser system developed by the author for use in PDT was compact, user-friendly, and delivered a stable and easily adjustable output power at a specific wavelength and user-set emission modes. PMID:24155529

Subsurface optical stimulation of rat prostate cavernous nerves using a continuous wave, single mode, 1490 nm diode laser

NASA Astrophysics Data System (ADS)

Tozburun, Serhat; Stahl, Charlotte S. D.; Hutchens, Thomas C.; Lagoda, Gwen A.; Burnett, Arthur L.; Fried, Nathaniel M.

2013-03-01

Successful identification of the cavernous nerves (CN's) during radical prostatectomy requires detection of the CN's through a thin layer of overlying fascia. This study explores the 1490 nm infrared (IR) diode laser wavelength for rapid and deep subsurface CN stimulation in a rat model, in vivo. A 150-mW, 1490-nm diode laser providing an optical penetration depth of 520 μm was used to stimulate the CN's in 8 rats through a single mode fiber optic probe with 1-mm-diameter spot and 15 s irradiation time. Successful ONS was judged by an intracavernous pressure response (ICP) in the rat penis. Subsurface ONS at 1490 nm was also compared with previous studies using 1455 and 1550 nm IR diode laser wavelengths. ONS was observed through fascia layers up to 380 μm thick using an incident laser power of 50 mW. ICP response times as short as 4.6 +/- 0.2 s were recorded using higher laser powers bust still below the nerve damage threshold. The 1490-nm diode laser represents a compact, low cost, high power, and high quality infrared light source for use in ONS. This wavelength provides deeper optical penetration than 1455 nm and more rapid and efficient nerve stimulation than 1550 nm.

Narrow linewidth diode laser modules for quantum optical sensor applications in the field and in space

NASA Astrophysics Data System (ADS)

Wicht, A.; Bawamia, A.; Krüger, M.; Kürbis, Ch.; Schiemangk, M.; Smol, R.; Peters, A.; Tränkle, G.

2017-02-01

We present the status of our efforts to develop very compact and robust diode laser modules specifically suited for quantum optics experiments in the field and in space. The paper describes why hybrid micro-integration and GaAs-diode laser technology is best suited to meet the needs of such applications. The electro-optical performance achieved with hybrid micro-integrated, medium linewidth, high power distributed-feedback master-oscillator-power-amplifier modules and with medium power, narrow linewidth extended cavity diode lasers emitting at 767 nm and 780 nm are briefly described and the status of space relevant stress tests and space heritage is summarized. We also describe the performance of an ECDL operating at 1070 nm. Further, a novel and versatile technology platform is introduced that allows for integration of any type of laser system or electro-optical module that can be constructed from two GaAs chips. This facilitates, for the first time, hybrid micro-integration, e.g. of extended cavity diode laser master-oscillator-poweramplifier modules, of dual-stage optical amplifiers, or of lasers with integrated, chip-based phase modulator. As an example we describe the implementation of an ECDL-MOPA designed for experiments on ultra-cold rubidium and potassium atoms on board a sounding rocket and give basic performance parameters.

Modeling the effect of heatsink performance in high-peak-power laser-diode-bar pump sources for solid-state lasers 011 011

DOE Office of Scientific and Technical Information (OSTI.GOV)

Honea, E.C., LLNL

We derive approximate expressions for transient output power and wavelength chirp of high- peak-power laser-diode bars assuming one-dimensional heat flow and linear temperature dependences for chirp and efficiency. The model is derived for pulse durations, 10 < {tau} < 1000 ps, typically used for diode-pumped solid-state lasers and is in good agreement with experimental data for Si heatsink mounted 940 nm laser-diode bars operating at 100 W/cm. The analytic expressions are more flexible and easily used than the results of operating point dependent numerical modeling. In addition, the analytic expressions used here can be integrated to describe the energy permore » unit wavelength for a given pulse duration, initial emission bandwidth and heatsink material. We find that the figure-of-merit for a heatsink material in this application is ({rho}C{sub p}K) where {rho}C{sub p} is the volumetric heat capacity and K is the thermal conductivity. As an example of the utility of the derived expressions, we determine an effective absorption coefficient as a function of pump pulse duration for a diode-pumped solid-state laser utilizing Yb:Sr{sub 5}(PO{sub 4}){sub 3}F (Yb:S-FAP) as the gain medium.« less

AlGaInN laser diode technology and systems for defence and security applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2015-10-01

AlGaInN laser diodes is an emerging technology for defence and security applications such as underwater communications and sensing, atomic clocks and quantum information. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries. Ridge waveguide laser diodes are fabricated to achieve single mode operation with optical powers up to 100mW with the 400-440nm wavelength range with high reliability. Visible free-space and underwater communication at frequencies up to 2.5GHz is reported using a directly modulated 422nm GaN laser diode. Low defectivity and highly uniform GaN substrates allow arrays and bars to be fabricated. High power operation operation of AlGaInN laser bars with up to 20 emitters have been demonstrated at optical powers up to 4W in a CS package with common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space or optical fibre system integration with a very small form-factor.

LASER BIOLOGY AND MEDICINE: Medical instruments based on high-power diode and fibre lasers

NASA Astrophysics Data System (ADS)

Gapontsev, V. P.; Minaev, V. P.; Savin, V. I.; Samartsev, I. E.

2002-11-01

The characteristics and possible applications of scalpels based on diode and fibre lasers emitting at 0.97, 1.06, 1.56, and 1.9 μm, which are produced and developed by the IRE-Polyus Co., are presented. The advantages of such devices and the possibilities for increasing their output power and extending their spectral range are shown.

Rectified diode response of a multimode quantum cascade laser integrated terahertz transceiver.

PubMed

Dyer, Gregory C; Norquist, Christopher D; Cich, Michael J; Grine, Albert D; Fuller, Charles T; Reno, John L; Wanke, Michael C

2013-02-25

We characterized the DC transport response of a diode embedded in a THz quantum cascade laser as the laser current was changed. The overall response is described by parallel contributions from the rectification of the laser field due to the non-linearity of the diode I-V and from thermally activated transport. Sudden jumps in the diode response when the laser changes from single mode to multi-mode operation, with no corresponding jumps in output power, suggest that the coupling between the diode and laser field depends on the spatial distribution of internal fields. The results demonstrate conclusively that the internal laser field couples directly to the integrated diode.

NicoLase—An open-source diode laser combiner, fiber launch, and sequencing controller for fluorescence microscopy

PubMed Central

Walsh, James; Böcking, Till; Gaus, Katharina

2017-01-01

Modern fluorescence microscopy requires software-controlled illumination sources with high power across a wide range of wavelengths. Diode lasers meet the power requirements and combining multiple units into a single fiber launch expands their capability across the required spectral range. We present the NicoLase, an open-source diode laser combiner, fiber launch, and software sequence controller for fluorescence microscopy and super-resolution microscopy applications. Two configurations are described, giving four or six output wavelengths and one or two single-mode fiber outputs, with all CAD files, machinist drawings, and controller source code openly available. PMID:28301563

Electrical system for a motor vehicle

DOEpatents

Tamor, Michael Alan

1999-01-01

In one embodiment of the present invention, an electrical system for a motor vehicle comprises a capacitor, an engine cranking motor coupled to receive motive power from the capacitor, a storage battery and an electrical generator having an electrical power output, the output coupled to provide electrical energy to the capacitor and to the storage battery. The electrical system also includes a resistor which limits current flow from the battery to the engine cranking motor. The electrical system further includes a diode which allows current flow through the diode from the generator to the battery but which blocks current flow through the diode from the battery to the cranking motor.

High-power and brightness laser diode modules using new DBR chips

NASA Astrophysics Data System (ADS)

Yu, Hao; Riva, Martina; Rossi, Giammarco; Braglia, Andrea; Perrone, Guido

2018-02-01

The paper reports on the design, manufacturing and preliminary characterization of a new family of compact and high beam quality multi-emitter laser diode modules capable of delivering up to over 400W in a 135/0.15 fiber. The layout exploits a proprietary architecture and is based on innovative narrow linewidth high-power DBR chips, properly combined through spatial, polarization and wavelength multiplexing. The intrinsic wavelength-stabilization of these DBR chips allows the use of the developed modules not only for direct-diode material processing but also in pump sources for ytterbium-doped fiber lasers without the need of external stabilization devices.

High frequency capacitor-diode voltage multiplier dc-dc converter development

NASA Technical Reports Server (NTRS)

Kisch, J. J.; Martinelli, R. M.

1977-01-01

A power conditioner was developed which used a capacitor diode voltage multiplier to provide a high voltage without the use of a step-up transformer. The power conditioner delivered 1200 Vdc at 100 watts and was operated from a 120 Vdc line. The efficiency was in excess of 90 percent. The component weight was 197 grams. A modified boost-add circuit was used for the regulation. A short circuit protection circuit was used which turns off the drive circuit upon a fault condition, and recovers within 5 ms after removal of the short. High energy density polysulfone capacitors and high speed diodes were used in the multiplier circuit.

Electrical system for a motor vehicle

DOEpatents

Tamor, M.A.

1999-07-20

In one embodiment of the present invention, an electrical system for a motor vehicle comprises a capacitor, an engine cranking motor coupled to receive motive power from the capacitor, a storage battery and an electrical generator having an electrical power output, the output coupled to provide electrical energy to the capacitor and to the storage battery. The electrical system also includes a resistor which limits current flow from the battery to the engine cranking motor. The electrical system further includes a diode which allows current flow through the diode from the generator to the battery but which blocks current flow through the diode from the battery to the cranking motor. 2 figs.

Single-frequency diode-pumped lasers for free-space optical communication

NASA Technical Reports Server (NTRS)

Kane, Thomas J.; Cheng, Emily A. P.; Gerstenberger, David C.; Wallace, Richard W.

1990-01-01

Recent advances in laser technology for intersatellite optical communication systems are reviewed and illustrated with graphs and diagrams. Topics addressed include (1) single-frequency diode-pumped Nd:YAG lasers of monolithic ring configuration (yielding 368-384 mW output power with 1-W pumping), (2) injection chaining of up to 10 monolithic resonators to achieve redundancy and/or higher output power, (3) 2-kHz-linewidth 5-mW versions of (1) which are tunable over a 30-MHz range for use as local oscillators in coherent communication, (4) resonant external modulation and doubling or resonant phase modulation of diode-pumped lasers, and (5) wavelength multiplexing.

Testing of active heat sink for advanced high-power laser diodes

NASA Astrophysics Data System (ADS)

Vetrovec, John; Copeland, Drew A.; Feeler, Ryan; Junghans, Jeremy

2011-03-01

We report on the development of a novel active heat sink for high-power laser diodes offering unparalleled capacity in high-heat flux handling and temperature control. The heat sink employs convective heat transfer by a liquid metal flowing at high speed inside a miniature sealed flow loop. Liquid metal flow in the loop is maintained electromagnetically without any moving parts. Thermal conductance of the heat sink is electronically adjustable, allowing for precise control of diode temperature and the laser light wavelength. This paper presents the principles and challenges of liquid metal cooling, and data from testing at high heat flux and high heat loads.

High power, 1060-nm diode laser with an asymmetric hetero-waveguide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, T; Zhang, Yu; Hao, E

2015-07-31

By introducing an asymmetric hetero-waveguide into the epitaxial structure of a diode laser, a 6.21-W output is achieved at a wavelength of 1060 nm. A different design in p- and n-confinement, based on optimisation of energy bands, is used to reduce voltage loss and meet the requirement of high power and high wall-plug efficiency. A 1060-nm diode laser with a single quantum well and asymmetric hetero-structure waveguide is fabricated and analysed. Measurement results show that the asymmetric hetero-structure waveguide can be efficiently used for reducing voltage loss and improving the confinement of injection carriers and wall-plug efficiency. (lasers)

Power combination of two phase-locked high power microwave beams from a new coaxial microwave source based on dual beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yangmei; Zhang, Xiaoping, E-mail: plinafly@163.com; Zhang, Jiande

2014-10-15

The new coaxial high power microwave source based on dual beams has demonstrated two phase-locked output microwave beams generated by its two sub-sources. In order to achieve a single higher output power, we present a three-port waveguide-based power combiner to combine the two microwave beams. Particle-in-cell simulation results show that when the diode voltage is 675 kV and the guiding magnetic field is 0.8 T, a combined microwave with an average power of about 4.0 GW and a frequency of 9.74 GHz is generated; the corresponding power conversion efficiency is 29%. The combination effect of the combiner is further validated in the diodemore » voltage range from 675 kV to 755 kV as well as in the pulse regime. The simulations indicate that the maximum surface axial electric field strength of the electrodynamic structure is 720 kV/cm, which is relatively low corresponding to an output power of 4.0 GW. The stable combined output suggests the probability of long-pulse operation for the combined source.« less

Propagation of a radial phased-locked Lorentz beam array in turbulent atmosphere.

PubMed

Zhou, Guoquan

2011-11-21

A radial phased-locked (PL) Lorentz beam array provides an appropriate theoretical model to describe a coherent diode laser array, which is an efficient radiation source for high-power beaming use. The propagation of a radial PL Lorentz beam array in turbulent atmosphere is investigated. Based on the extended Huygens-Fresnel integral and some mathematical techniques, analytical formulae for the average intensity and the effective beam size of a radial PL Lorentz beam array are derived in turbulent atmosphere. The average intensity distribution and the spreading properties of a radial PL Lorentz beam array in turbulent atmosphere are numerically calculated. The influences of the beam parameters and the structure constant of the atmospheric turbulence on the propagation of a radial PL Lorentz beam array in turbulent atmosphere are discussed in detail. © 2011 Optical Society of America

Effect of particle size on the UV pulsed-laser scribing in computational fluid dynamics-based simulations

NASA Astrophysics Data System (ADS)

Park, Kwan-Woo; Na, Suck-Joo

2010-06-01

A computational model for UV pulsed-laser scribing of silicon target is presented and compared with experimental results. The experiments were performed with a high-power Q-switched diode-pumped solid state laser which was operated at 355 nm. They were conducted on n-type 500 μm thick silicon wafers. The scribing width and depth were measured using scanning electron microscopy. The model takes into account major physics, such as heat transfer, evaporation, multiple reflections, and Rayleigh scattering. It also considers the attenuation and redistribution of laser energy due to Rayleigh scattering. Especially, the influence of the average particle sizes in the model is mainly investigated. Finally, it is shown that the computational model describing the laser scribing of silicon is valid at an average particle size of about 10 nm.

Efficient generation of 509 nm light by sum-frequency mixing between two tapered diode lasers

NASA Astrophysics Data System (ADS)

Tawfieq, Mahmoud; Jensen, Ole Bjarlin; Hansen, Anders Kragh; Sumpf, Bernd; Paschke, Katrin; Andersen, Peter E.

2015-03-01

We demonstrate a concept for visible laser sources based on sum-frequency generation of beam combined tapered diode lasers. In this specific case, a 1.7 W sum-frequency generated green laser at 509 nm is obtained, by frequency adding of 6.17 W from a 978 nm tapered diode laser with 8.06 W from a 1063 nm tapered diode laser, inside a periodically poled MgO doped lithium niobate crystal. This corresponds to an optical to optical conversion efficiency of 12.1%. As an example of potential applications, the generated nearly diffraction-limited green light is used for pumping a Ti:sapphire laser, thus demonstrating good beam quality and power stability. The maximum output powers achieved when pumping the Ti:sapphire laser are 226 mW (CW) and 185 mW (mode-locked) at 1.7 W green pump power. The optical spectrum emitted by the mode-locked Ti:sapphire laser shows a spectral width of about 54 nm (FWHM), indicating less than 20 fs pulse width.

Advancements in high-power high-brightness laser bars and single emitters for pumping and direct diode application

NASA Astrophysics Data System (ADS)

An, Haiyan; Jiang, Ching-Long J.; Xiong, Yihan; Zhang, Qiang; Inyang, Aloysius; Felder, Jason; Lewin, Alexander; Roff, Robert; Heinemann, Stefan; Schmidt, Berthold; Treusch, Georg

2015-03-01

We have continuously optimized high fill factor bar and packaging design to increase power and efficiency for thin disc laser system pump application. On the other hand, low fill factor bars packaged on the same direct copper bonded (DCB) cooling platform are used to build multi-kilowatt direct diode laser systems. We have also optimized the single emitter designs for fiber laser pump applications. In this paper, we will give an overview of our recent advances in high power high brightness laser bars and single emitters for pumping and direct diode application. We will present 300W bar development results for our next generation thin disk laser pump source. We will also show recent improvements on slow axis beam quality of low fill factor bar and its application on performance improvement of 4-5 kW TruDiode laser system with BPP of 30 mm*mrad from a 600 μm fiber. Performance and reliability results of single emitter for multiemitter fiber laser pump source will be presented as well.

Development of an efficient DC-DC SEPIC converter using wide bandgap power devices for high step-up applications

NASA Astrophysics Data System (ADS)

Al-bayati, Ali M. S.; Alharbi, Salah S.; Alharbi, Saleh S.; Matin, Mohammad

2017-08-01

A highly efficient high step-up dc-dc converter is the major requirement in the integration of low voltage renewable energy sources, such as photovoltaic panel module and fuel cell stacks, with a load or utility. This paper presents the development of an efficient dc-dc single-ended primary-inductor converter (SEPIC) for high step-up applications. Three SEPIC converters are designed and studied using different combinations of power devices: a combination based on all Si power devices using a Si-MOSFET and a Si-diode and termed as Si/Si, a combination based on a hybrid of Si and SiC power devices using the Si-MOSFET and a SiC-Schottky diode and termed as Si/SiC, and a combination based on all SiC power devices using a SiC-MOSFET and the SiC-Schottky diode and termed as SiC/SiC. The switching behavior of the Si-MOSFET and SiC-MOSFET is characterized and analyzed within the different combinations at the converter level. The effect of the diode type on the converter's overall performance is also discussed. The switching energy losses, total power losses, and the overall performance effciency of the converters are measured and reported under different switching frequencies. Furthermore, the potential of the designed converters to operate efficiently at a wide range of input voltages and output powers is studied. The analysis and results show an outstanding performance efficiency of the designed SiC/SiC based converter under a wide range of operating conditions.

Microwave switching power divider. [antenna feeds

NASA Technical Reports Server (NTRS)

Stockton, R. J.; Johnson, R. W. (Inventor)

1981-01-01

A pair of parallel, spaced-apart circular ground planes define a microwave cavity with multi-port microwave power distributing switching circuitry formed on opposite sides of a thin circular dielectric substrate disposed between the ground planes. The power distributing circuitry includes a conductive disk located at the center of the substrate and connected to a source of microwave energy. A high speed, low insertion loss switching diode and a dc blocking capacitor are connected in series between the outer end of a transmission line and an output port. A high impedance, microwave blocking dc bias choke is connected between each switching diode and a source of switching current. The switching source forward biases the diodes to couple microwave energy from the conductive disk to selected output ports and, to associated antenna elements connected to the output ports to form a synthesized antenna pattern.

Continuous-wave laser operation at 743 and 753 nm based on a diode-pumped c-cut Pr:YAlO3 crystal

NASA Astrophysics Data System (ADS)

Lin, Xiuji; Huang, Xiaoxu; Liu, Bin; Xu, Bin; Xu, Huiying; Cai, Zhiping; Xu, Xiaodong; Li, Dongzhen; Liu, Jian; Xu, Jun

2018-02-01

We report on blue-diode-pumped continuous-wave Pr:YAlO3 (YAP) crystal lasers. Using a b-cut sample, a maximum output power of 181 mW is achieved at ∼747 nm with slope efficiency of 12.7% with respect to the absorbed power. Using a c-cut sample, a dual-wavelength laser at ∼743 and ∼753 nm is obtained with a total maximum output power of 72 mW by using the blue diode pumping, for the first time to our knowledge. These laser emissions are all linearly polarized and M2 factors of these output laser beams are also measured. YAP is experimentally verified to be one of effective oxide hosts for Pr-doped visible laser operation besides its fluoride counterparts.

Space station power semiconductor package

NASA Technical Reports Server (NTRS)

Balodis, Vilnis; Berman, Albert; Devance, Darrell; Ludlow, Gerry; Wagner, Lee

1987-01-01

A package of high-power switching semiconductors for the space station have been designed and fabricated. The package includes a high-voltage (600 volts) high current (50 amps) NPN Fast Switching Power Transistor and a high-voltage (1200 volts), high-current (50 amps) Fast Recovery Diode. The package features an isolated collector for the transistors and an isolated anode for the diode. Beryllia is used as the isolation material resulting in a thermal resistance for both devices of .2 degrees per watt. Additional features include a hermetical seal for long life -- greater than 10 years in a space environment. Also, the package design resulted in a low electrical energy loss with the reduction of eddy currents, stray inductances, circuit inductance, and capacitance. The required package design and device parameters have been achieved. Test results for the transistor and diode utilizing the space station package is given.

A High Efficiency Multiple-Anode 260-340 GHz Frequency Tripler

NASA Technical Reports Server (NTRS)

Maestrini, Alain; Tripon-Canseliet, Charlotte; Ward, John S.; Gill, John J.; Mehdi, Imran

2006-01-01

We report on the fabrication at the Jet Propulsion Laboratory of a fixed-tuned split-block waveguide balanced frequency tripler working in the 260-340 GHz band. This tripler will be the first stage of a x3x3x3 multiplier chain to 2.7 THz (the last stages of which are being fabricated at JPL) and is therefore optimized for high power operation. The multiplier features six GaAs Schottky planar diodes in a balanced configuration integrated on a GaAs membrane. Special attention was put on splitting the input power as evenly as possible among the diodes in order to ensure that no diode is overdriven. Preliminary RF tests indicate that the multiplier covers the expected bandwidth and that the efficiency is in the range 1.5-7.5 % with 100 mW of input power.

Thermal modelling of high-power laser diodes mounted using various types of submounts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bezotosnyi, V V; Krokhin, O N; Oleshchenko, V A

2014-10-31

Using three-dimensional thermal modelling of a highpower 980-nm laser diode with a stripe contact width of 100 μm as an example, we analyse the thermal parameters of high-power laser diodes mounted using submounts. We consider a range of thermal conductivities of submounts that includes parameters of widely used thermal compensators based on AlN, BeO and SiC, as well as on CuW and CuMo composites and polycrystalline and single-crystal synthetic diamond with high thermal conductivity. Taking into account experimental overall efficiency vs. pump current data, we calculate the temperature of the active layer as a function of the width, thickness andmore » thermal conductivity of the submount at thermal loads corresponding to cw output powers of 10, 15 and 20 W. (lasers)« less

Overview of optical rectennas for solar energy harvesting

NASA Astrophysics Data System (ADS)

Zhu, Zixu; Joshi, Saumil; Pelz, Bradley; Moddel, Garret

2013-09-01

Although the concept of using optical rectenna for harvesting solar energy was first introduced four decades ago, only recently has it invited a surge of interest, with dozens of laboratories around the world working on various aspects of the technology. An optical rectenna couples an ultra-high-speed diode to a submicron antenna so that the incoming radiation received by the antenna is rectified by the diode to produce a DC power output. The result is a technology that can be efficient and inexpensive, requiring only low-cost materials. Conventional classical rectification theory does not apply at optical frequencies, necessitating the application of quantum photon-assisted tunneling theory to describe the device operation. At first glance it would appear that the ultimate conversion efficiency is limited only by the Landsberg limit of 93%, but a more sober analysis that includes limitation due to the coherence of solar radiation leads to a result that coincides with the Trivich-Flinn limit of 44%. Innovative antenna designs are required to achieve high efficiency at frequencies where resistive losses in metal are substantial. The diode most often considered for rectennas make use of electron tunneling through ultra-thin insulators in metal-insulator-metal (MIM) diodes. The most severe constraint is that the impedances of the antenna and diodes must match for efficient power transfer. The consequence is an RC time constant that cannot be achieved with parallel-plate MIM diodes, leading to the need for real innovations in diode structures. Technologies under consideration include sharp-tip and traveling-wave MIM diodes, and graphene geometric diodes. We survey the technologies under consideration.

Progress on single barrier varactors for submillimeter wave power generation

NASA Technical Reports Server (NTRS)

Nilsen, Svein M.; Groenqvist, Hans; Hjelmgren, Hans; Rydberg, Anders; Kollberg, Erik L.

1992-01-01

Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modeling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated I-V, and C-V characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modeled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modeled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes.

Carbon-Nanotube Schottky Diodes

NASA Technical Reports Server (NTRS)

Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter

2006-01-01

Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid-state Schottky diodes.

Generating a high brightness multi-kilowatt laser by dense spectral combination of VBG stabilized single emitter laser diodes

NASA Astrophysics Data System (ADS)

Fritsche, H.; Koch, Ralf; Krusche, B.; Ferrario, F.; Grohe, Andreas; Pflueger, S.; Gries, W.

2014-05-01

Generating high power laser radiation with diode lasers is commonly realized by geometrical stacking of diode bars, which results in high output power but poor beam parameter product (BPP). The accessible brightness in this approach is limited by the fill factor, both in slow and fast axis. By using a geometry that accesses the BPP of the individual diodes, generating a multi kilowatt diode laser with a BPP comparable to fiber lasers is possible. We will demonstrate such a modular approach for generating multi kilowatt lasers by combining single emitter diode lasers. Single emitter diodes have advantages over bars, mainly a simplified cooling, better reliability and a higher brightness per emitter. Additionally, because single emitters can be arranged in many different geometries, they allow building laser modules where the brightness of the single emitters is preserved. In order to maintain the high brightness of the single emitter we developed a modular laser design which uses single emitters in a staircase arrangement, then coupling two of those bases with polarization combination which is our basic module. Those modules generate up to 160 W with a BPP better than 7.5 mm*mrad. For further power scaling wavelength stabilization is crucial. The wavelength is stabilized with only one Volume Bragg Grating (VBG) in front of a base providing the very same feedback to all of the laser diodes. This results in a bandwidth of < 0.5 nm and a wavelength stability of better than 250 MHz over one hour. Dense spectral combination with dichroic mirrors and narrow channel spacing allows us to combine multiple wavelength channels, resulting in a 2 kW laser module with a BPP better than 7.5 mm*mrad, which can easily coupled into a 100 μm fiber and 0.15 NA.

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

NASA Technical Reports Server (NTRS)

Kuczmarski, Maria A.; Neudeck, Philip G.

2000-01-01

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

940nm QCW diode laser bars with 70% efficiency at 1 kW output power at 203K: analysis of remaining limits and path to higher efficiency and power at 200K and 300K

NASA Astrophysics Data System (ADS)

Frevert, C.; Bugge, F.; Knigge, S.; Ginolas, A.; Erbert, G.; Crump, P.

2016-03-01

Both high-energy-class laser facilities and commercial high-energy pulsed laser sources require reliable optical pumps with the highest pulse power and electro-optical efficiency. Although commercial quasi-continuous wave (QCW) diode laser bars reach output powers of 300…500 W further improvements are urgently sought to lower the cost per Watt, improve system performance and reduce overall system complexity. Diode laser bars operating at temperatures of around 200 K show significant advances in performance, and are particularly attractive in systems that use cryogenically cooled solid state lasers. We present the latest results on 940 nm, passively cooled, 4 mm long QCW diode bars which operate under pulse conditions of 1.2 ms, 10 Hz at an output power of 1 kW with efficiency of 70% at 203 K: a two-fold increase in power compared to 300 K, without compromising efficiency. We discuss how custom low-temperature design of the vertical layers can mitigate the limiting factors such as series resistance while sustaining high power levels. We then focus on the remaining obstacles to higher efficiency and power, and use a detailed study of multiple vertical structures to demonstrate that the properties of the active region are a major performance limit. Specifically, one key limit to series resistance is transport in the layers around the active region and the differential internal efficiency is closely correlated to the threshold current. Tailoring the barriers around the active region and reducing transparency current density thus promise bars with increased performance at temperatures of 200 K as well as 300 K.

Formation of 2D bright spatial solitons in lithium niobate with photovoltaic response and incoherent background

NASA Astrophysics Data System (ADS)

Pustozerov, A.; Shandarov, V.

2017-12-01

The influence of incoherent background illumination produced by light-emitting diodes (LED's) of different average wavelengths and laser diode emitting in blue region of visible on diffraction characteristics of narrow coherent light beams of He-Ne laser due to refractive index changes of Fe-doped lithium niobate sample are studied. It has been experimentally demonstrated that nonlinear diffraction of red beams with wavelength 633 nm and diameters on full width of half maximum (FWHM) near to 15 μm may be totally compensated using background light with average wavelengths 450 - 465 nm. To provide the necessary intensity of incoherent background, the combinations of spherical and cylindrical concave lenses with blue LED and laser diode module without focusing its beam have been used.

Operation of a high impedance applied-B extraction ion diode on the SABRE positive polarity linear induction accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanson, D.L.; Cuneo, M.E.; McKay, P.F.

We present results from initial experiments with a high impedance applied-B extraction diode on the SABRE ten stage linear induction accelerator (6.7 MV, 300 kA). We have demonstrated efficient coupling of power from the accelerator through an extended MITL (Magnetically Insulated Transmission Line) into a high intensity ion beam. Both MITL electron flow in the diode region and ion diode behavior, including ion source turn-on, virtual cathode formation and evolution, enhancement delay, and ion coupling efficiency, are strongly influenced by the geometry of the diode insulating magnetic field. For our present diode electrode geometry, electrons from the diode feed stronglymore » influence the evolution of the virtual cathode. Both experimental data and particle-in-cell numerical simulations show that uniform insulation of these feed electrons is required for uniform ion emission and efficient diode operation.« less

Direct diode lasers with comparable beam quality to fiber, CO2, and solid state lasers

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Burgess, James; Kaiman, Michael; Overman, Robert; Glenn, John D.; Tayebati, Parviz

2012-03-01

TeraDiode has produced kW-class ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 2,040 W from a 50 μm core diameter, 0.15 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.75 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 2-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers.

Development and fabrication of a fast recovery, high voltage power diode

NASA Technical Reports Server (NTRS)

Berman, A. H.; Balodis, V.; Duffin, J. J.; Gaugh, C.; Kkaratnicki, H. M.; Troutman, G.

1981-01-01

The use of positive bevels for P-I-N mesa structures to achieve high voltages is described. The technique of glass passivation for mesa structures is described. The utilization of high energy radiation to control the lifetime of carriers in silicon is reported as a means to achieve fast recovery times. Characterization data is reported and is in agreement with design concepts developed for power diodes.

Efficient diode-pumped Tm:KYW 1.9-μm microchip laser with 1 W cw output power.

PubMed

Gaponenko, Maxim; Kuleshov, Nikolay; Südmeyer, Thomas

2014-05-19

We report on a diode-pumped Tm:KYW microchip laser generating 1 W continuous-wave output power. The laser operates at a wavelength of 1.94 μm in the fundamental TEM(00) mode with 71% slope efficiency relative to the absorbed pump radiation and 59% slope efficiency relative to the incident pump radiation. The optical-to-optical laser efficiency is 43%.

Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module

NASA Astrophysics Data System (ADS)

Wang, Xin; Wang, Cuiluan; Wu, Xia; Zhu, Lingni; Jing, Hongqi; Ma, Xiaoyu; Liu, Suping

2017-02-01

Based on the high-speed development of the fiber laser in recent years, the development of researching 915 nm semiconductor laser as main pumping sources of the fiber laser is at a high speed. Because the beam quality of the laser diode is very poor, the 915 nm laser diode is generally based on optical fiber coupling module to output the laser. Using the beam-shaping and fiber-coupling technology to improve the quality of output beam light, we present a kind of high-power and high-brightness semiconductor laser module, which can output 13.22 W through the optical fiber. Based on 915 nm GaAs semiconductor laser diode which has output power of 13.91 W, we describe a thoroughly detailed procedure for reshaping the beam output from the semiconductor laser diode and coupling the beam into the optical fiber of which the core diameter is 105 μm and the numerical aperture is 0.18. We get 13.22 W from the output fiber of the module at 14.5 A, the coupling efficiency of the whole module is 95.03% and the brightness is 1.5 MW/cm2 -str. The output power of the single chip semiconductor laser module achieves the advanced level in the domestic use.

Methods for slow axis beam quality improvement of high power broad area diode lasers

NASA Astrophysics Data System (ADS)

An, Haiyan; Xiong, Yihan; Jiang, Ching-Long J.; Schmidt, Berthold; Treusch, Georg

2014-03-01

For high brightness direct diode laser systems, it is of fundamental importance to improve the slow axis beam quality of the incorporated laser diodes regardless what beam combining technology is applied. To further advance our products in terms of increased brightness at a high power level, we must optimize the slow axis beam quality despite the far field blooming at high current levels. The later is caused predominantly by the built-in index step in combination with the thermal lens effect. Most of the methods for beam quality improvements reported in publications sacrifice the device efficiency and reliable output power. In order to improve the beam quality as well as maintain the efficiency and reliable output power, we investigated methods of influencing local heat generation to reduce the thermal gradient across the slow axis direction, optimizing the built-in index step and discriminating high order modes. Based on our findings, we have combined different methods in our new device design. Subsequently, the beam parameter product (BPP) of a 10% fill factor bar has improved by approximately 30% at 7 W/emitter without efficiency penalty. This technology has enabled fiber coupled high brightness multi-kilowatt direct diode laser systems. In this paper, we will elaborate on the methods used as well as the results achieved.

Concepts and performance of solid state RGB laser sources for large-frame laser projection displays

NASA Astrophysics Data System (ADS)

Nebel, Achim; Wallenstein, Richard E.

2000-04-01

We report on concepts and the performance of diode pumped solid state laser systems which generate simultaneously red (R), green (G) and blue (B) laser light with output powers of up to 7.1 W at 629 nm, 6.9 W at 532 nm and 5.0 W at 446 nm. The superposition of this RGB radiation provides white light with a power of 19 W. In respect to the diode pump power of 110 W the RGB output corresponds to an optical efficiency of 17%.

Multi-wavelength and multiband RE-doped optical fiber source array for WDM-GPON applications

NASA Astrophysics Data System (ADS)

Perez-Sanchez, G. G.; Bertoldi-Martins, I.; Gallion, P.; Gosset, C.; Álvarez-Chávez, J. A.

2013-12-01

In this paper, a multiband, multi-wavelength, all-fibre source array consisting of an 810nm pump laser diode, thretwo fiber splitters and three segments of Er-, Tm- and Nd-doped fiber is proposed for PON applications. In the set-up, cascaded pairs of standard fiber gratings are used for extracting the required multiple wavelengths within their corresponding bands. A thorough design parameter description, optical array details and full simulation results, such as: full multi-wavelength spectrum, peak and average powers for each generated wavelength, linewidth at FWHM for each generated signal, and individual and overall conversion efficiency, will be included in the manuscript.

Novel packaging for CW and QCW diode laser modules for operation with high power and duty cycles

NASA Astrophysics Data System (ADS)

Fassbender, Wilhelm; Lotz, Jens; Kissel, Heiko; Biesenbach, Jens

2018-02-01

Continuous wave (CW) and quasi-continuous wave (QCW) operated diode laser bars and arrays have found a wide range of industrial, medical, scientific, military and space applications with a broad variety in wavelength, pulse energy, pulse duration and beam quality. Recent applications require even higher power, duty cycles and power density. The heat loss will be dissipated by conductive cooling or liquid cooling close to the bars. We present the latest performance and reliability data of two novel high-brightness CW and QCW arrays of customized and mass-production modules, in compact and robust industry design for operation with high power and high duty cycles. All designs are based on single diode packages consisting of 10mm laser bars, soft or hard soldered between expansion matched submounts. The modular components cover a wide span of designs which differ basically in water/conduction (active/passive) cooled, single, linear (horizontal and vertical) arranged designs, as well as housed and unhoused modules. The different assembling technologies of active and passive cooled base plates affect the heat dissipation and therefore the reachable power at different QCW operating conditions, as well as the lifetime. As an example, a package consisting of 8 laser diodes, connected to a 28.8*13.5*7.0mm3 DCB (direct copper bonded) submount, passively or actively cooled is considered. This design is of particular interest for mobile applications seamless module to module building system, with an infinite number of laser bars at 1.7mm pitch. Using 940nm bars we can reach an optical output power per bar of 450W at 25°C base plate temperature with 10Hz, 1.2% duty cycle and 1.2ms pulse duration. As an additional example, micro channel coolers can be vertically stacked up to 50 diodes with a 1,15mm pitch. This design is suitable for all applications, demanding also compactness and light weight and high power density. Using near infrared bars and others, we can reach an optical output power of 250W per bar at 25°C coolant temperature at CW operation.

Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

PubMed

Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

2014-12-01

Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Efficient single-mode (TEM{sub 00}) Nd : YVO{sub 4} laser with longitudinal 808-nm diode pumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Donin, V I; Yakovin, D V; Yakovin, M D

2013-10-31

A single-mode Nd : YVO{sub 4} laser with unidirectional longitudinal pumping by laser diodes with λ = 808 nm and a power of 40 W is studied. In the TEM{sub 00} mode, the output laser power is 24 W with the optical efficiency η{sub opt} = 57.1 % (slope efficiency 63.3 %), which, as far as we know, is the best result for Nd{sup 3+} : YVO{sub 4} lasers with longitudinal pumping at λ = 808 nm from one face of the active crystal. Estimates of thermal effects show that, using a Nd : YVO{sub 4} crystal (length 20 mm,more » diameter 3 mm, dopant concentration 0.27 at%) with two undoped ends and bidirectional diode pumping with a total power of 170 W, one can obtain an output power of ∼100 W in the TEM{sub 00} mode from one active element. (lasers)« less

Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications

NASA Astrophysics Data System (ADS)

Ziegler, Volker; Berg, Michael; Tobler, Hans; Woelk, Claus; Deufel, Reinhard; Trasser, Andreas; Schumacher, Hermann; Alekseev, Egor; Pavlidis, Dimitris; Dickmann, Juergen

1999-02-01

In this paper, we present the measurement results of two InP-based coplanar SPST (single pole single throw) PIN diode switches operating at V-band frequencies. The switches show excellent mm-wave performance combined with a very low DC-power consumption. The SPST with on-chip biasing and DC-blocking capacitors demonstrates an insertion loss as low as 0.84 dB and a high isolation value of 21.8 dB at a center frequency of 53 GHz with only 0.8 mW of DC-power consumption. A more simple SPST exhibits under equivalent conditions (0.9 mW) an excellent insertion loss of 0.52 dB and an isolation of 21.7 dB. Furthermore the power-handling capability of the InGaAs PIN diodes, which are used as active switching elements, is investigated in this paper and found to exceed 25 dBm at a reverse voltage of -5 V.

Laser-induced electron source in a vacuum diode

NASA Astrophysics Data System (ADS)

Ghera, U.; Boxman, R. L.; Kleinman, H.; Ruschin, S.

1989-11-01

Experiments were conducted in which a high-power CO2 TEA laser interacted with metallic cathode in a high-vacuum (10 to the -8th Torr) diode. For power densities lower than 5 x 10 to the 7th W/sq cm, no current was detected. For power densities in the range of 5 x 10 to the 7th to 5 x 10 to the 8th W/sq cm, the Cu cathode emitted a maximum current of 40 mA. At a higher power density level, a circuit-limited current of 8 A was detected. The jump of a few orders of magnitude in the current is attributed to breakdown of the diode gap. The experimental results are similar to those of a triggered vacuum gap, and a thorough comparison is presented in this paper. The influence of the pressure in the vacuum chamber on the current magnitude shows the active role that adsorbed gas molecules have in the initial breakdown. When the cathode material was changed from metal to metal oxide, much lower laser power densities were required to reach the breakdown current region.

Thermal imaging of high power diode lasers subject to back-irradiance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, C.; Pipe, K. P.; Cao, C.

In this study, CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying themore » relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.« less

Narrow-line, cw orange light generation in a diode-pumped Nd:YVO4 laser using volume Bragg gratings.

PubMed

Chen, Y L; Chen, W W; Du, C E; Chang, W K; Wang, J L; Chung, T Y; Chen, Y H

2009-12-07

We report on the demonstration of a narrow-line, cw orange 593-nm laser achieved via intracavity sum-frequency generation (SFG) of a diode-pumped dual-wavelength (1064 and 1342 nm) Nd:YVO(4) laser using two volume Bragg grating (VBG) reflectors. At diode pump power of up to 3.6 W, the 593-nm intracavity SFG laser radiates at the single longitudinal mode of spectral linewidth as narrow as approximately 15 MHz. More than 23-mW single-longitudinal-mode or 40-mW, <8.5-GHz (10-pm) linewidth (at 4.2-W diode pump power) 593-nm orange lights can be obtained from this compact laser system. Spectral tuning of the orange light was performed via the temperature tuning of the two VBGs in this system, achieving an effective tuning rate of ~5 pm/degrees C.

Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence

NASA Astrophysics Data System (ADS)

Wen, Pengyan; Liu, Jianping; Zhang, Shuming; Zhang, Liqun; Ikeda, Masao; Li, Deyao; Tian, Aiqin; Zhang, Feng; Cheng, Yang; Zhou, Wei; Yang, Hui

2017-11-01

The temperature, power, and voltage dependent photoluminescence spectra are studied in InGaN/GaN double quantum well blue laser diodes. Emissions from the two quantum wells can be distinguished at low temperature at low excitation power density due to the different built-in electric field in the two quantum wells. This finding is utilized to study the degradation of InGaN/GaN blue laser diodes. Two peaks are observed for the non-aged laser diode (LD), while one peak for the aged LD which performed 3200 h until no laser output is detected. The disappearance of the high energy peak in the photoluminescence spectra indicates a heavier degradation of the quantum well on the p-side, which agrees with our previous observation that both the linewidth and the potential fluctuation of InGaN quantum wells (QWs) reduced for the aged LDs.

Thermal imaging of high power diode lasers subject to back-irradiance

DOE PAGES

Li, C.; Pipe, K. P.; Cao, C.; ...

2018-03-07

In this study, CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying themore » relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.« less

Thermal imaging of high power diode lasers subject to back-irradiance

NASA Astrophysics Data System (ADS)

Li, C.; Pipe, K. P.; Cao, C.; Thiagarajan, P.; Deri, R. J.; Leisher, P. O.

2018-03-01

CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying the relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.

Gallium phosphide high temperature diodes

NASA Technical Reports Server (NTRS)

Chaffin, R. J.; Dawson, L. R.

1981-01-01

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed-Energy Capability

DTIC Science & Technology

2017-03-01

Relating Silicon Carbide Avalanche Breakdown Diode Design to Pulsed- Energy Capability Damian Urciuoli, Miguel Hinojosa, and Ronald Green US...were pulse tested in an inductive load circuit at peak powers of over 110 kW. Total pulsed- energy dissipation was kept nearly the same among the...voltages about which design provides the highest pulsed- energy capability. Keywords: Avalanche; Breakdown; Diode; Silicon Carbide Introduction

Thermal and optical modeling of "blackened" tips for diode laser surgery

NASA Astrophysics Data System (ADS)

Belikov, Andrey V.; Skrypnik, Alexei V.; Kurnyshev, Vadim Y.

2016-04-01

This paper presents the results of thermal and optical modeling of "blackened" tips (fiber-optic thermal converter) with different structures: film and volumetric. Film converter is created by laser radiation action on a cork or paper and it is a one-step process. As a result, a carbonized cork or paper adhered to the distal end of the optical fiber absorbs light that leads to heating of the distal end of the optical fiber. We considered the peculiarities of volumetric converters formed by sintering (second step) of the target material transferred to the tip, at irradiating the target with laser radiation (first step). We investigated the interaction between 980 nm laser radiation and converters in the air and water. As a result of experiments and modeling, it was obtain, that converter temperature and power of converter destruction depend on the environment in which it is placed. We found that film converter in the air at average power of laser radiation of 0.30+/-0.05 W is heated to 900+/-50°C and destructed, and volumetric converter in the air at average power of laser radiation of 1.0+/-0.1 W is heated to 1000+/-50°C and destructed at reaching of 4.0+/-0.1 W only. We found that film converter in the water at average power of laser radiation of 1.0+/-0.1 W is heated to 550+/-50°C and destructed at reaching of 4.0+/-0.1 W only. Volumetric converter at average power of laser radiation of4.0+/-0.1 W is heated to 450+/-50°C and is not destructed up to 7.5+/-0.1 W, it is heated to 500+/-50°C in this case. Thus, volumetric converter is more resistant to action of laser heating.

Solid State Clipper Diodes for High Power Modulators.

DTIC Science & Technology

1978-11-01

modeled at low powers and later confirmed in actua l P W pulsar operation. 0~ \\ ~~~~~~~~~ . ~~~~~ .. . .— - - I. ~~~~~ 3 J~ItV~ . \\ W \\_ UNC l ASSIFIE...and CG is the di ide api-i tance to 1avg — Ip ~ j- ground . In our design the worst case diode leakage (I 2( lO ~C) was 15 milliamperes (mA) at I kV...without it. I2rms 1p 2 ~~ ( 4) the diode junction capacitance and stray l’nns — 5 x lO ~ A 2 capacitance affect the voltage division whenever the

Small core fiber coupled 60-W laser diode

NASA Astrophysics Data System (ADS)

Fernie, Douglas P.; Mannonen, Ilkka; Raven, Anthony L.

1995-05-01

Semiconductor laser diodes are compact, efficient and reliable sources of laser light and 25 W fiber coupled systems developed by Diomed have been in clinical use for over three years. For certain applications, particularly in the treatment of benign prostatic hyperplasia and flexible endoscopy, higher powers are desirable. In these applications the use of flexible optical fibers of no more than 600 micrometers core diameter is essential for compatibility with most commercial delivery fibers and instrumentation. A high power 60 W diode laser system for driving these small core fibers has been developed. The design requirements for medical applications are analyzed and system performance and results of use in gastroenterology and urology with small core fibers will be presented.

A diode-pumped Nd:YAlO3 dual-wavelength yellow light source

NASA Astrophysics Data System (ADS)

Zhang, Jing; Fu, Xihong; Zhai, Pei; Xia, Jing; Li, Shutao

2013-11-01

We present what is, to the best of our knowledge, the first diode-pumped Nd:YAlO3 (Nd:YAP) continuous-wave (cw) dual-wavelength yellow laser at 593 nm and 598 nm, based on sum-frequency generation between 1064 and 1339 nm in a-axis polarization using LBO crystal and between 1079 and 1341 nm in c-axis polarization using PPKTP crystal, respectively. At an incident pump power of 17.3 W, the maximum output power obtained at 593 nm and 598 nm is 0.18 W and 1.86 W, respectively. The laser experiment shows that Nd:YAP crystal can be used for an efficient diode-pumped dual-wavelength yellow laser system.

Visible high power fiber coupled diode lasers

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Drovs, Simon; Stoiber, Michael; Dürsch, Sascha; Kissel, Heiko; Könning, Tobias; Biesenbach, Jens; König, Harald; Lell, Alfred; Stojetz, Bernhard; Löffler, Andreas; Strauß, Uwe

2018-02-01

In this paper we report on further development of fiber coupled high-power diode lasers in the visible spectral range. New visible laser modules presented in this paper include the use of multi single emitter arrays @ 450 nm leading to a 120 W fiber coupled unit with a beam quality of 44 mm x mrad, as well as very compact modules with multi-W output power from 405 nm to 640 nm. However, as these lasers are based on single emitters, power scaling quickly leads to bulky laser units with a lot of optical components to be aligned. We also report on a new approach based on 450 nm diode laser bars, which dramatically reduces size and alignment effort. These activities were performed within the German government-funded project "BlauLas": a maximum output power of 80 W per bar has been demonstrated @ 450 nm. We show results of a 200 μm NA0.22 fiber coupled 35 W source @ 450 nm, which has been reduced in size by a factor of 25 compared to standard single emitter approach. In addition, we will present a 200 μm NA0.22 fiber coupled laser unit with an output power of 135 W.

Miniaturized power limiter metasurface based on Fano-type resonance and Babinet principle.

PubMed

Loo, Y L; Wang, H G; Zhang, H; Ong, C K

2016-09-05

In this work, we present a miniaturize power limiter, a device with size smaller than that required by the working frequency, made of coupled self-complementary electric inductive-capacitive (CELC) resonator and original electric inductive-capacitive (ELC) structure. We also make use of Babinet principle to ensure both CELC and ELC are resonating at the same frequency. The CELC structure is loaded with a Schottky diode to achieve the effect of a nonlinear power limiter. The constructive interference of CELC and ELC structure produces a new Fano-type resonance peak at a lower frequency. The Fano peak is sharp and able to concentrate electric field at a region between the inner and outer metallic patch of the metastructure, hence enhancing the nonlinear properties of the loaded diode. The Fano peak enhances the maximum isolation of the power limiter due to the local field enhancement at where the diode is loaded. Numerical simulation and experiment are conducted in the S-band frequency to verify the power limiting effect of the device designed and to discuss the formation of Fano peak. The power limiter designed has a maximum isolation of 8.4 dB and a 3-dB isolation bandwidth of 6%.

Developments in space power components for power management and distribution

NASA Technical Reports Server (NTRS)

Renz, D. D.

1984-01-01

Advanced power electronic components development for space applications is discussed. The components described include transformers, inductors, semiconductor devices such as transistors and diodes, remote power controllers, and transmission lines.

Characteristics of a large vacuum wave precursor on the SABRE voltage adder MITL and extraction ion diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuneo, M.E.; Hanson, D.L.; Menge, P.R.

SABRE (Sandia Accelerator and Beam Research Experiment) is a ten-cavity linear induction magnetically insulated voltage adder (6 MV, 300 kA) operated in positive polarity to investigate issues relevant to ion beam production and propagation for inertial confinement fusion. The voltage adder section is coupled to an applied-B extraction ion diode via a long coaxial output transmission line. Observations indicate that the power propagates in a vacuum wave prior to electron emission. After the electron emission threshold is reached, power propagates in a magnetically insulated wave. The precursor is observed to have a dominant impact on he turn-on, impedance history, andmore » beam characteristics of applied-B ion diodes since the precursor voltage is large enough to cause electron emission at the diode from both the cathode feed and cathode tips. The amplitude of the precursor at the load (3--4.5 MV) is a significant fraction of the maximum load voltage (5--6 MV) because (1) the transmission line gaps ( {approx} 9 cm at output) and therefore impedances are relatively large, and hence the electric field threshold for electron emission (200 to 300 kV/cm) is not reached until well into the power pulse rise time; and (2) the rapidly falling forward wave and diode impedance reduces the ratio of main pulse voltage to precursor voltage. Experimental voltage and current data from the transmission line and the ion diode will be presented and compared with TWOQUICK (2-D electromagnetic PIC code) simulations and analytic models.« less

Generation of 369.4 nm Radiation by Efficient Doubling of a Diode Laser

NASA Technical Reports Server (NTRS)

Williams, A.; Seidel, D. J.; Maleki, J.

1993-01-01

A resonant cavity second harmonic generation system has been developed to produce 369.4 nm radiation from a 738.8 nm diode laser with 10 mW nominal output power. This system utilizes a polarization technique to lock the cavity to the laser frequency. In this paper we report on an evaluation of the system using a Titanium:Sapphire laser as the input source, and preliminary results with a diode laser source. To our knowledge, this is the deepest uv light ever produced by frequency-doubling a diode laser.

Laser-diode-pumped 1319-nm monolithic non-planar ring single-frequency laser

NASA Astrophysics Data System (ADS)

Wang, Qing; Gao, Chunqing; Zhao, Yan; Yang, Suhui; Wei, Guanghui; 2, Dongmei Hong

2003-10-01

Single-frequency 1319-nm laser was obtained by using a laser-diode-pumped monolithic Nd:YAG crystal with a non-planar ring oscillator (NPRO). When the NPRO laser was pumped by an 800-?m fiber coupled laser diode, the output power of the single-frequency 1319-nm laser was 220 mW, and the slope efficiency was 16%. With a 100-1m fiber coupled diode laser pumped, 99-mW single-frequency 1319-nm laser was obtained with a slope efficiency of 29%.

Pulse power applications of silicon diodes in EML capacitive pulsers

NASA Astrophysics Data System (ADS)

Dethlefsen, Rolf; McNab, Ian; Dobbie, Clyde; Bernhardt, Tom; Puterbaugh, Robert; Levine, Frank; Coradeschi, Tom; Rinaldi, Vito

1993-01-01

Crowbar diodes are used for increasing the energy transfer from capacitive pulse forming networks. They also prevent voltage reversal on the energy storage capacitors. 52 mm diameter diodes with a 5 kV reverse blocking voltage, rated 40 kA were successfully used for the 32 MJ SSG rail gun. An uprated diode with increased current capability and a 15 kV reverse blocking voltage has been developed. Transient thermal analysis has predicted the current ratings for different pulse length. Analysis verification is obtained from destructive testing.

View from... Photonics Meets Biology Summer School: The bio-mission of diode lasers

NASA Astrophysics Data System (ADS)

Won, Rachel

2015-12-01

Diode lasers represent a viable alternative to light sources used in many biomedical applications. Their ongoing development will further increase their importance, offering not only multiple wavelength ranges, but also higher power levels.

Thin film application device and method for coating small aperture vacuum vessels

DOEpatents

Walters, Dean R; Este, Grantley O

2015-01-27

A device and method for coating an inside surface of a vessel is provided. In one embodiment, a coating device comprises a power supply and a diode in electrical communication with the power supply, wherein electrodes comprising the diode reside completely within the vessel. The method comprises reversibly sealing electrodes in a vessel, sputtering elemental metal or metal compound on the surface while maintaining the surface in a controlled atmosphere.

Diode step stress program for JANTX1N5615

NASA Technical Reports Server (NTRS)

1979-01-01

The effect of power/temperature step stress when applied to the switching diode JANTX1N5615 manufactured by Semtech and Micro semiconductor was examined. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are presented.

Solid-state X-band Combiner Study

NASA Technical Reports Server (NTRS)

Pitzalis, O., Jr.; Russell, K. J.

1979-01-01

The feasibility of developing solid-state amplifiers at 4 and 10 GHz for application in spacecraft altimeters was studied. Bipolar-transistor, field-effect-transistor, and Impatt-diode amplifier designs based on 1980 solid-state technology are investigated. Several output power levels of the pulsed, low-duty-factor amplifiers are considered at each frequency. Proposed transistor and diode amplifier designs are illustrated in block diagrams. Projections of size, weight, and primary power requirements are given for each design.

Surgical effects on soft tissue produced by a 405-nm violet diode laser in vivo

NASA Astrophysics Data System (ADS)

Miyazaki, H.; Kato, J.; Kawai, S.; Hatayama, H.; Uchida, K.; Otsuki, M.; Tagami, J.; Yokoo, S.

2011-12-01

This study evaluated the surgical performance of a 405-nm diode laser in vivo, using living rat liver tissue. Tissue was incised by irradiation with the laser at low output power ranging from 1 W (722 W/cm2) to 3 W (2165 W/cm2) on a manual control at a rate of 1 mm/s. As a control, incisions using a stainless scalpel were compared. Immediately after operation, the surface of the incisions was macroscopically observed and histopathologically evaluated by microscopy. Laser-ablated liver tissue was smooth with observable signs of remnant carbonization and easily acquired hemostasis. The thickness of the denatured layer increased in proportion to the output power; the coagulation layer did not thicken accordingly. Bleeding could not be stopped for tissues incised with the stainless scalpel. The 405-nm diode laser thus proved to be effective for ablating soft tissue with high hemostatic ability at low power.

Thermal sensing of cryogenic wind tunnel model surfaces Evaluation of silicon diodes

NASA Technical Reports Server (NTRS)

Daryabeigi, K.; Ash, R. L.; Dillon-Townes, L. A.

1986-01-01

Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.

Thermal sensing of cryogenic wind tunnel model surfaces - Evaluation of silicon diodes

NASA Technical Reports Server (NTRS)

Daryabeigi, Kamran; Ash, Robert L.; Dillon-Townes, Lawrence A.

1986-01-01

Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.

Proposed Use of Zero Bias Diode Arrays as Thermal Electric Noise Rectifiers and Non-Thermal Energy Harvesters

NASA Astrophysics Data System (ADS)

Valone, Thomas F.

2009-03-01

The well known built-in voltage potential for some select semiconductor p-n junctions and various rectifying devices is proposed to be favorable for generating DC electricity at "zero bias" (with no DC bias voltage applied) in the presence of Johnson noise or 1/f noise which originates from the quantum vacuum (Koch et al., 1982). The 1982 Koch discovery that certain solid state devices exhibit measurable quantum noise has also recently been labeled a finding of dark energy in the lab (Beck and Mackey, 2004). Tunnel diodes are a class of rectifiers that are qualified and some have been credited with conducting only because of quantum fluctuations. Microwave diodes are also good choices since many are designed for zero bias operation. A completely passive, unamplified zero bias diode converter/detector for millimeter (GHz) waves was developed by HRL Labs in 2006 under a DARPA contract, utilizing a Sb-based "backward tunnel diode" (BTD). It is reported to be a "true zero-bias diode." It was developed for a "field radiometer" to "collect thermally radiated power" (in other words, 'night vision'). The diode array mounting allows a feed from horn antenna, which functions as a passive concentrating amplifier. An important clue is the "noise equivalent power" of 1.1 pW per root hertz and the "noise equivalent temperature difference" of 10° K, which indicate sensitivity to Johnson noise (Lynch, et al., 2006). There also have been other inventions such as "single electron transistors" that also have "the highest signal to noise ratio" near zero bias. Furthermore, "ultrasensitive" devices that convert radio frequencies have been invented that operate at outer space temperatures (3 degrees above zero point: 3° K). These devices are tiny nanotech devices which are suitable for assembly in parallel circuits (such as a 2-D array) to possibly produce zero point energy direct current electricity with significant power density (Brenning et al., 2006). Photovoltaic p-n junction cells are also considered for possible higher frequency ZPE transduction. Diode arrays of self-assembled molecular rectifiers or preferably, nano-sized cylindrical diodes are shown to reasonably provide for rectification of electron fluctuations from thermal and non-thermal ZPE sources to create an alternative energy DC electrical generator in the picowatt per diode range.

Can small field diode correction factors be applied universally?

PubMed

Liu, Paul Z Y; Suchowerska, Natalka; McKenzie, David R

2014-09-01

Diode detectors are commonly used in dosimetry, but have been reported to over-respond in small fields. Diode correction factors have been reported in the literature. The purpose of this study is to determine whether correction factors for a given diode type can be universally applied over a range of irradiation conditions including beams of different qualities. A mathematical relation of diode over-response as a function of the field size was developed using previously published experimental data in which diodes were compared to an air core scintillation dosimeter. Correction factors calculated from the mathematical relation were then compared those available in the literature. The mathematical relation established between diode over-response and the field size was found to predict the measured diode correction factors for fields between 5 and 30 mm in width. The average deviation between measured and predicted over-response was 0.32% for IBA SFD and PTW Type E diodes. Diode over-response was found to be not strongly dependent on the type of linac, the method of collimation or the measurement depth. The mathematical relation was found to agree with published diode correction factors derived from Monte Carlo simulations and measurements, indicating that correction factors are robust in their transportability between different radiation beams. Copyright © 2014. Published by Elsevier Ireland Ltd.