Science.gov

Sample records for average power semiconductor

  1. High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.

    PubMed

    Rudin, B; Wittwer, V J; Maas, D J H C; Hoffmann, M; Sieber, O D; Barbarin, Y; Golling, M; Südmeyer, T; Keller, U

    2010-12-20

    High-power ultrafast lasers are important for numerous industrial and scientific applications. Current multi-watt systems, however, are based on relatively complex laser concepts, for example using additional intracavity elements for pulse formation. Moving towards a higher level of integration would reduce complexity, packaging, and manufacturing cost, which are important requirements for mass production. Semiconductor lasers are well established for such applications, and optically-pumped vertical external cavity surface emitting lasers (VECSELs) are most promising for higher power applications, generating the highest power in fundamental transverse mode (>20 W) to date. Ultrashort pulses have been demonstrated using passive modelocking with a semiconductor saturable absorber mirror (SESAM), achieving for example 2.1-W average power, sub-100-fs pulse duration, and 50-GHz pulse repetition rate. Previously the integration of both the gain and absorber elements into a single wafer was demonstrated with the MIXSEL (modelocked integrated external-cavity surface emitting laser) but with limited average output power (<200 mW). We have demonstrated the power scaling concept of the MIXSEL using optimized quantum dot saturable absorbers in an antiresonant structure design combined with an improved thermal management by wafer removal and mounting of the 8-µm thick MIXSEL structure directly onto a CVD-diamond heat spreader. The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser. PMID:21197032

  2. Average power constraints in AlGaAs semiconductor lasers under pulse-position-modulation conditions

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1986-01-01

    In some optical communications systems there are advantages to using low duty-cycle pulsed modulation formats such as pulse-position-modulation. However, because of intrinsic limitations of AlGaAs semiconductor lasers, the average power that they can deliver in a pulsed mode of operation is lower than in a CW mode. The magnitude of this problem and its implications are analyzed in this letter, and one possible solution is mentioned.

  3. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    SciTech Connect

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL`s). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL`s which are appropriate for material processing applications, low and intermediate average power DPSSL`s are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications.

  4. New developments in power semiconductors

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1983-01-01

    This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

  5. High average power pockels cell

    DOEpatents

    Daly, Thomas P.

    1991-01-01

    A high average power pockels cell is disclosed which reduces the effect of thermally induced strains in high average power laser technology. The pockels cell includes an elongated, substantially rectangular crystalline structure formed from a KDP-type material to eliminate shear strains. The X- and Y-axes are oriented substantially perpendicular to the edges of the crystal cross-section and to the C-axis direction of propagation to eliminate shear strains.

  6. Semiconductor ac static power switch

    NASA Technical Reports Server (NTRS)

    Vrancik, J.

    1968-01-01

    Semiconductor ac static power switch has long life and high reliability, contains no moving parts, and operates satisfactorily in severe environments, including high vibration and shock conditions. Due to their resistance to shock and vibration, static switches are used where accidental switching caused by mechanical vibration or shock cannot be tolerated.

  7. Hybrid power semiconductor

    NASA Astrophysics Data System (ADS)

    Chen, D. Y.

    1985-10-01

    The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit. One FET is used to drive the bipolar transistor while the other FET is connected in series with the transistor and an inductive load. Both FETs are turned on or off by a single drive signal of load power, the second FET upon ceasing conductions, rendering one power electrode of the bipolar transistor open. Means are provided to dissipate currents which flow after the bipolar transistor is rendered nonconducting.

  8. Hybrid power semiconductor

    NASA Technical Reports Server (NTRS)

    Chen, D. Y.

    1985-01-01

    The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit. One FET is used to drive the bipolar transistor while the other FET is connected in series with the transistor and an inductive load. Both FETs are turned on or off by a single drive signal of load power, the second FET upon ceasing conductions, rendering one power electrode of the bipolar transistor open. Means are provided to dissipate currents which flow after the bipolar transistor is rendered nonconducting.

  9. Cooling and mounting power semiconductors

    NASA Astrophysics Data System (ADS)

    Wetzel, P.

    1980-04-01

    The article examines the process of heat dissipation from power semiconductors. It is shown that for the relationship between temperature loading and dissipation it is possible to take an 'Ohm's law of heat abduction' to define the thermal impedance. The computation of the optimal size for a heatsink is demonstrated in detail. Discussion covers the types of heat dissipation such as heat radiation, heat conduction, and convection. Finally, some factors to consider during installation are examined.

  10. High-Average Power Facilities

    SciTech Connect

    Dowell, David H.; Power, John G.; /Argonne

    2012-09-05

    There has been significant progress in the development of high-power facilities in recent years yet major challenges remain. The task of WG4 was to identify which facilities were capable of addressing the outstanding R&D issues presently preventing high-power operation. To this end, information from each of the facilities represented at the workshop was tabulated and the results are presented herein. A brief description of the major challenges is given, but the detailed elaboration can be found in the other three working group summaries.

  11. Space station power semiconductor package

    NASA Technical Reports Server (NTRS)

    Balodis, Vilnis; Berman, Albert; Devance, Darrell; Ludlow, Gerry; Wagner, Lee

    1987-01-01

    A package of high-power switching semiconductors for the space station have been designed and fabricated. The package includes a high-voltage (600 volts) high current (50 amps) NPN Fast Switching Power Transistor and a high-voltage (1200 volts), high-current (50 amps) Fast Recovery Diode. The package features an isolated collector for the transistors and an isolated anode for the diode. Beryllia is used as the isolation material resulting in a thermal resistance for both devices of .2 degrees per watt. Additional features include a hermetical seal for long life -- greater than 10 years in a space environment. Also, the package design resulted in a low electrical energy loss with the reduction of eddy currents, stray inductances, circuit inductance, and capacitance. The required package design and device parameters have been achieved. Test results for the transistor and diode utilizing the space station package is given.

  12. HIGH AVERAGE POWER OPTICAL FEL AMPLIFIERS.

    SciTech Connect

    BEN-ZVI, ILAN, DAYRAN, D.; LITVINENKO, V.

    2005-08-21

    Historically, the first demonstration of the optical FEL was in an amplifier configuration at Stanford University [l]. There were other notable instances of amplifying a seed laser, such as the LLNL PALADIN amplifier [2] and the BNL ATF High-Gain Harmonic Generation FEL [3]. However, for the most part FELs are operated as oscillators or self amplified spontaneous emission devices. Yet, in wavelength regimes where a conventional laser seed can be used, the FEL can be used as an amplifier. One promising application is for very high average power generation, for instance FEL's with average power of 100 kW or more. The high electron beam power, high brightness and high efficiency that can be achieved with photoinjectors and superconducting Energy Recovery Linacs (ERL) combine well with the high-gain FEL amplifier to produce unprecedented average power FELs. This combination has a number of advantages. In particular, we show that for a given FEL power, an FEL amplifier can introduce lower energy spread in the beam as compared to a traditional oscillator. This properly gives the ERL based FEL amplifier a great wall-plug to optical power efficiency advantage. The optics for an amplifier is simple and compact. In addition to the general features of the high average power FEL amplifier, we will look at a 100 kW class FEL amplifier is being designed to operate on the 0.5 ampere Energy Recovery Linac which is under construction at Brookhaven National Laboratory's Collider-Accelerator Department.

  13. New applications for high average power beams

    NASA Astrophysics Data System (ADS)

    Neau, E. L.; Turman, B. N.; Patterson, E. L.

    1993-06-01

    The technology base formed by the development of high peak power simulators, laser drivers, FEL's, and ICF drivers from the early 60's through the late 80's is being extended to high average power short-pulse machines with the capabilities of supporting new types of manufacturing processes and performing new roles in environmental cleanup applications. This paper discusses a process for identifying and developing possible commercial applications, specifically those requiring very high average power levels of hundreds of kilowatts to perhaps megawatts. The authors discuss specific technology requirements and give examples of application development efforts. The application development work is directed at areas that can possibly benefit from the high specific energies attainable with short pulse machines.

  14. High-average-power exciplex laser system

    NASA Astrophysics Data System (ADS)

    Sentis, M.

    The LUX high-average-power high-PRF exciplex laser (EL) system being developed at the Institut de Mecanique des Fluides de Marseille is characterized, and some preliminary results are presented. The fundamental principles and design criteria of ELs are reviewed, and the LUX components are described and illustrated, including a closed-circuit subsonic wind tunnel and a 100-kW-average power 1-kHz-PRF power pulser providing avalanche-discharge preionization by either an electron beam or an X-ray beam. Laser energy of 50 mJ has been obtained at wavelength 308 nm in the electron-beam mode (14.5 kV) using a 5300/190/10 mixture of Ne/Xe/HCl at pressure 1 bar.

  15. Power semiconductor device with negative thermal feedback

    NASA Technical Reports Server (NTRS)

    Borky, J. M.; Thornton, R. D.

    1970-01-01

    Composite power semiconductor avoids second breakdown and provides stable operation. It consists of an array of parallel-connected integrated circuits fabricated in a single chip. The output power device and associated low-level amplifier are closely coupled thermally, so that they have a predetermined temperature relationship.

  16. High average power linear induction accelerator development

    SciTech Connect

    Bayless, J.R.; Adler, R.J.

    1987-07-01

    There is increasing interest in linear induction accelerators (LIAs) for applications including free electron lasers, high power microwave generators and other types of radiation sources. Lawrence Livermore National Laboratory has developed LIA technology in combination with magnetic pulse compression techniques to achieve very impressive performance levels. In this paper we will briefly discuss the LIA concept and describe our development program. Our goals are to improve the reliability and reduce the cost of LIA systems. An accelerator is presently under construction to demonstrate these improvements at an energy of 1.6 MeV in 2 kA, 65 ns beam pulses at an average beam power of approximately 30 kW. The unique features of this system are a low cost accelerator design and an SCR-switched, magnetically compressed, pulse power system. 4 refs., 7 figs.

  17. Refrigeration penalties for crycooling power semiconductor devices

    SciTech Connect

    Ramalingam, M.L.; Donovan, B.D.; Mahefkey, T.

    1995-12-31

    There has been recent interest in the potential applications of cryogenically cooled power electronics, capacitors, and inductors. There are potentially many military and commercial uses for these devices. Preliminary feasibility studies, based on refrigeration thermodynamics, have been conducted for candidate power semiconductor and power conditioning components. While superconducting devices operate at 77K or lower, the present analysis indicates that significant benefits cannot be derived by cooling the various power conditioning components to such low temperatures. It was found that, by operating the power semiconductor component at 150K instead of at 77K, the overall system efficiency was not jeopardized by way of large input power requirements to dissipate small refrigerator loads. This is an acute problem as current cryogenic refrigeration systems allow for very low levels of energy dissipation while performing at about 7 to 10% of the Carnot coefficients of performance (COP) between 300K and 77K.

  18. A power semiconductor test circuit with reduced power requirements

    NASA Technical Reports Server (NTRS)

    Been, J. F.

    1970-01-01

    Switching circuit utilizing silicon controlled rectifier reduces input power requirements normally associated with testing power semiconductors in an operational type mode. Circuit alleviates problems of inaccessibility, lack of large amounts of power, physical size of power resistors, wiring, and heat generation.

  19. High average power solid state laser power conditioning system

    SciTech Connect

    Steinkraus, R.F.

    1987-03-03

    The power conditioning system for the High Average Power Laser program at Lawrence Livermore National Laboratory (LLNL) is described. The system has been operational for two years. It is high voltage, high power, fault protected, and solid state. The power conditioning system drives flashlamps that pump solid state lasers. Flashlamps are driven by silicon control rectifier (SCR) switched, resonant charged, (LC) discharge pulse forming networks (PFNs). The system uses fiber optics for control and diagnostics. Energy and thermal diagnostics are monitored by computers.

  20. High-power semiconductor separate-confinement double heterostructure lasers

    SciTech Connect

    Tarasov, I S

    2010-10-15

    The review is devoted to high-power semiconductor lasers. Historical reference is presented, physical and technological foundations are considered, and the concept of high-power semiconductor lasers is formulated. Fundamental and technological reasons limiting the optical power of a semiconductor laser are determined. The results of investigations of cw and pulsed high-power semiconductor lasers are presented. Main attention is paid to inspection of the results of experimental studies of single high-power semiconductor lasers. The review is mainly based on the data obtained in the laboratory of semiconductor luminescence and injection emitters at the A.F. Ioffe Physicotechnical Institute. (review)

  1. High average power switching in diamond

    SciTech Connect

    Hofer, W.W.; Schoenbach, K.H.

    1992-06-01

    Diamond has many properties which make it ideal for a high power solid-state switch. The crystal structure of diamond is relatively well characterized. It is a semiconductor with a band-gap of 5.5 eV at 300{degree}K. The high band-gap of diamond results in a small dark current compared to Si or GaAs. As a result the breakdown field or holding voltage is very high, 1--10 MV/cm. The electron and hole mobility are approximately 2000 cm{sup 2}/v-sec. At room temperature, diamond has the highest thermal conductivity of any solid, 20 W/{degree}K -cm, about five times that of copper. This is ideal for switching because heat dissipation and thermal runaway problems are greatly mitigated. Our switch concept uses a low current (power on-off switch. Steady advancements in CVD polycrystalline and single crystal diamond help make this possible.

  2. High average power switching in diamond

    SciTech Connect

    Hofer, W.W. ); Schoenbach, K.H. )

    1992-06-01

    Diamond has many properties which make it ideal for a high power solid-state switch. The crystal structure of diamond is relatively well characterized. It is a semiconductor with a band-gap of 5.5 eV at 300[degree]K. The high band-gap of diamond results in a small dark current compared to Si or GaAs. As a result the breakdown field or holding voltage is very high, 1--10 MV/cm. The electron and hole mobility are approximately 2000 cm[sup 2]/v-sec. At room temperature, diamond has the highest thermal conductivity of any solid, 20 W/[degree]K -cm, about five times that of copper. This is ideal for switching because heat dissipation and thermal runaway problems are greatly mitigated. Our switch concept uses a low current (power on-off switch. Steady advancements in CVD polycrystalline and single crystal diamond help make this possible.

  3. High-Performance Power-Semiconductor Packages

    NASA Technical Reports Server (NTRS)

    Renz, David; Hansen, Irving; Berman, Albert

    1989-01-01

    A 600-V, 50-A transistor and 1,200-V, 50-A diode in rugged, compact, lightweight packages intended for use in inverter-type power supplies having switching frequencies up to 20 kHz. Packages provide low-inductance connections, low loss, electrical isolation, and long-life hermetic seal. Low inductance achieved by making all electrical connections to each package on same plane. Also reduces high-frequency losses by reducing coupling into inherent shorted turns in packaging material around conductor axes. Stranded internal power conductors aid conduction at high frequencies, where skin effect predominates. Design of packages solves historical problem of separation of electrical interface from thermal interface of high-power semiconductor device.

  4. Photoconductive Semiconductor Switches for pulsed power applications

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Denison, G.J.; Helgeson, W.D.; McLaughlin, D.L.; O`Malley, M.W.; Buttram, M.T.

    1993-08-01

    Photoconductive Semiconductor Switches (PCSS) are being used in, or tested for, many different pulsed power applications as diverse as ultrawideband (UWB) transmitters and high current pulsers. Some aspects of the switches that are relevant to most of the applications are: switch lifetime (longevity), switch opening time (related to the lifetime of carriers in the semiconductor), switching jitter, and the required laser energy. This paper will emphasize the results that we have obtained with Si switches for UWB applications. These include: measurement of switch longevity (a total of 80 Coulombs or 40 C/cm for a 2 cm wide switch and 18.4 Coulombs or 73 Coulombs/cm for a 0.25 cm wide switch), switching at high repetition rates (up to 540 Hz), measurement of carrier lifetime decay rates (a fast one of a few {mu}s, and a slow one of about 330 {mu}s), and measurements on the effect of neutron irradiation on carrier lifetimes. The total charge switched seems to be the highest ever reported for a PCSS. We have used these Si switches in a variety of circuits to produce: a monocycle with a period of about 10 ns corresponding to a center frequency of about 84 MHz, and ringing (many pulse) waveforms with periods of about 1 ns and 7.5 ns corresponding to center frequencies of 770 MHz and 133 MHz. We will also discuss recent studies on the switching properties of GaP.

  5. Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications

    SciTech Connect

    Ozpineci, B.

    2004-01-02

    Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide-bandgap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond, with their superior electrical properties, are likely candidates to replace Si in the near future. This report compares wide-bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.

  6. Recent advances in the development of high average power induction accelerators for industrial and environmental applications

    SciTech Connect

    Neau, F.L.

    1994-12-31

    Short-pulse accelerator technology developed during time period from the early 60`s through the late 80`s is now being extended to high average power systems capable of being used in industrial and environmental applications. Processes requiring high dose levels and/or high volume throughput may require systems with beam power levels from several hundreds of kilowatts to megawatts. Processes may include chemical waste mitigation, flue gas cleanup, food pasteurization, and new forms of materials preparation and treatment. This paper will address the present status of high average power systems now in operation that use combinations of semiconductor and saturable core magnetic switches with inductive voltage adders to achieve MeV beams of electrons or x-rays over areas of 10,000 cm{sup 2} or more. Similar high average power technology is also being used below 1 MeV to drive repetitive ion beam sources for treatment of material surfaces.

  7. High average power scaleable thin-disk laser

    DOEpatents

    Beach, Raymond J.; Honea, Eric C.; Bibeau, Camille; Payne, Stephen A.; Powell, Howard; Krupke, William F.; Sutton, Steven B.

    2002-01-01

    Using a thin disk laser gain element with an undoped cap layer enables the scaling of lasers to extremely high average output power values. Ordinarily, the power scaling of such thin disk lasers is limited by the deleterious effects of amplified spontaneous emission. By using an undoped cap layer diffusion bonded to the thin disk, the onset of amplified spontaneous emission does not occur as readily as if no cap layer is used, and much larger transverse thin disks can be effectively used as laser gain elements. This invention can be used as a high average power laser for material processing applications as well as for weapon and air defense applications.

  8. Neutron and gamma irradiation effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  9. Neutron and gamma irradiation effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  10. High power semiconductor lasers for deep space communications

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1981-01-01

    The parameters of semiconductor lasers pertaining to their application as optical emitters are discussed. Several methods to overcome their basic disadvantage, which is the low level of powers they emit, are reviewed. Most of these methods are based on a coherent power combining of several lasers.

  11. Development of over 300-watts average power excimer laser

    NASA Astrophysics Data System (ADS)

    Hirata, Kazuhiro; Kawamura, Joichi; Katou, Hiroyuki; Sajiki, Kazuaki; Okada, Makoto

    2004-05-01

    The high power excimer laser was developed. We have supplied the 240 watts (800 mJ, 300 Hz) average power excimer laser for industrial use, mainly for TFT LCD annealing. We are going to add the 300 watts (1 J, 300 Hz) average power laser for our line-up. This 300 watts new laser is based on the 240 watts laser, but improved some points. The electrodes size is longer and the electrical power circuit is reinforcement. Laser gas recipe is changed to be good for new system. In our test, we could oscillate over 300 watts average power operation. 310 watts servo operation is able to oscillate over 40 million pulses with less than 1.0 per cent for σ output stability. 330 watts servo operation is able to oscillate over 30 million pulses with almost less than 1.0 per cent for σ output stability. Experimental and theoretical studies of various parameters influencing the laser performance will be continued with further investigations and future improvements. We have confidence that it will be possible for this laser to produce higher power with long gas life.

  12. High average power diode pumped solid state lasers for CALIOPE

    SciTech Connect

    Comaskey, B.; Halpin, J.; Moran, B.

    1994-07-01

    Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory`s water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW`s 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL`s first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers.

  13. High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser.

    PubMed

    Kisel, V E; Rudenkov, A S; Pavlyuk, A A; Kovalyov, A A; Preobrazhenskii, V V; Putyato, M A; Rubtsova, N N; Semyagin, B R; Kuleshov, N V

    2015-06-15

    A high-power, diode-pumped, semiconductor saturable absorber mode-locked Yb(5%):KGW bulk laser was demonstrated with high optical-to-optical efficiency. Average output power as high as 8.8 W with optical-to-optical efficiency of 37.5% was obtained for Nm-polarized laser output with 162 fs pulse duration and 142 nJ pulse energy at a pulse repetition frequency of 62 MHz. For Np polarization, 143 fs pulses with pulse energy of 139 nJ and average output power of up to 8.6 W with optical-to-optical efficiency of 31% were generated. PMID:26076242

  14. HIGH AVERAGE POWER UV FREE ELECTRON LASER EXPERIMENTS AT JLAB

    SciTech Connect

    Douglas, David; Evtushenko, Pavel; Gubeli, Joseph; Hernandez-Garcia, Carlos; Legg, Robert; Neil, George; Powers, Thomas; Shinn, Michelle D; Tennant, Christopher; Williams, Gwyn

    2012-07-01

    Having produced 14 kW of average power at {approx}2 microns, JLAB has shifted its focus to the ultraviolet portion of the spectrum. This presentation will describe the JLab UV Demo FEL, present specifics of its driver ERL, and discuss the latest experimental results from FEL experiments and machine operations.

  15. Femtosecond fiber CPA system emitting 830 W average output power.

    PubMed

    Eidam, Tino; Hanf, Stefan; Seise, Enrico; Andersen, Thomas V; Gabler, Thomas; Wirth, Christian; Schreiber, Thomas; Limpert, Jens; Tünnermann, Andreas

    2010-01-15

    In this Letter we report on the generation of 830 W compressed average power from a femtosecond fiber chirped pulse amplification (CPA) system. In the high-power operation we achieved a compressor throughput of about 90% by using high-efficiency dielectric gratings. The output pulse duration of 640 fs at 78 MHz repetition rate results in a peak power of 12 MW. Additionally, we discuss further a scaling potential toward and beyond the kilowatt level by overcoming the current scaling limitations imposed by the transversal spatial hole burning.

  16. High-average-power diode-pumped Yb: YAG lasers

    SciTech Connect

    Avizonis, P V; Beach, R; Bibeau, C M; Emanuel, M A; Harris, D G; Honea, E C; Monroe, R S; Payne, S A; Skidmore, J A; Sutton, S B

    1999-10-01

    A scaleable diode end-pumping technology for high-average-power slab and rod lasers has been under development for the past several years at Lawrence Livermore National Laboratory (LLNL). This technology has particular application to high average power Yb:YAG lasers that utilize a rod configured gain element. Previously, this rod configured approach has achieved average output powers in a single 5 cm long by 2 mm diameter Yb:YAG rod of 430 W cw and 280 W q-switched. High beam quality (M{sup 2} = 2.4) q-switched operation has also been demonstrated at over 180 W of average output power. More recently, using a dual rod configuration consisting of two, 5 cm long by 2 mm diameter laser rods with birefringence compensation, we have achieved 1080 W of cw output with an M{sup 2} value of 13.5 at an optical-to-optical conversion efficiency of 27.5%. With the same dual rod laser operated in a q-switched mode, we have also demonstrated 532 W of average power with an M{sup 2} < 2.5 at 17% optical-to-optical conversion efficiency. These q-switched results were obtained at a 10 kHz repetition rate and resulted in 77 nsec pulse durations. These improved levels of operational performance have been achieved as a result of technology advancements made in several areas that will be covered in this manuscript. These enhancements to our architecture include: (1) Hollow lens ducts that enable the use of advanced cavity architectures permitting birefringence compensation and the ability to run in large aperture-filling near-diffraction-limited modes. (2) Compound laser rods with flanged-nonabsorbing-endcaps fabricated by diffusion bonding. (3) Techniques for suppressing amplified spontaneous emission (ASE) and parasitics in the polished barrel rods.

  17. High average power supercontinuum generation in a fluoroindate fiber

    NASA Astrophysics Data System (ADS)

    Swiderski, J.; Théberge, F.; Michalska, M.; Mathieu, P.; Vincent, D.

    2014-01-01

    We report the first demonstration of Watt-level supercontinuum (SC) generation in a step-index fluoroindate (InF3) fiber pumped by a 1.55 μm fiber master-oscillator power amplifier (MOPA) system. The SC is generated in two steps: first ˜1 ns amplified laser diode pulses are broken up into soliton-like sub-pulses leading to initial spectrum extension and then launched into a fluoride fiber to obtain further spectral broadening. The pump MOPA system can operate at a changeable repetition frequency delivering up to 19.2 W of average power at 2 MHz. When the 8-m long InF3 fiber was pumped with 7.54 W at 420 kHz, output average SC power as high as 2.09 W with 27.8% of slope efficiency was recorded. The achieved SC spectrum spread from 1 to 3.05 μm.

  18. Thermal effects in high average power optical parametric amplifiers.

    PubMed

    Rothhardt, Jan; Demmler, Stefan; Hädrich, Steffen; Peschel, Thomas; Limpert, Jens; Tünnermann, Andreas

    2013-03-01

    Optical parametric amplifiers (OPAs) have the reputation of being average power scalable due to the instantaneous nature of the parametric process (zero quantum defect). This Letter reveals serious challenges originating from thermal load in the nonlinear crystal caused by absorption. We investigate these thermal effects in high average power OPAs based on beta barium borate. Absorption of both pump and idler waves is identified to contribute significantly to heating of the nonlinear crystal. A temperature increase of up to 148 K with respect to the environment is observed and mechanical tensile stress up to 40 MPa is found, indicating a high risk of crystal fracture under such conditions. By restricting the idler to a wavelength range far from absorption bands and removing the crystal coating we reduce the peak temperature and the resulting temperature gradient significantly. Guidelines for further power scaling of OPAs and other nonlinear devices are given.

  19. Thermal effects in high average power optical parametric amplifiers.

    PubMed

    Rothhardt, Jan; Demmler, Stefan; Hädrich, Steffen; Peschel, Thomas; Limpert, Jens; Tünnermann, Andreas

    2013-03-01

    Optical parametric amplifiers (OPAs) have the reputation of being average power scalable due to the instantaneous nature of the parametric process (zero quantum defect). This Letter reveals serious challenges originating from thermal load in the nonlinear crystal caused by absorption. We investigate these thermal effects in high average power OPAs based on beta barium borate. Absorption of both pump and idler waves is identified to contribute significantly to heating of the nonlinear crystal. A temperature increase of up to 148 K with respect to the environment is observed and mechanical tensile stress up to 40 MPa is found, indicating a high risk of crystal fracture under such conditions. By restricting the idler to a wavelength range far from absorption bands and removing the crystal coating we reduce the peak temperature and the resulting temperature gradient significantly. Guidelines for further power scaling of OPAs and other nonlinear devices are given. PMID:23455291

  20. Power combining of semiconductor lasers: A review

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1982-01-01

    Several methods of coherent power combining are described and compared. A comparison is also made between coherent and incoherent power combining, and important operational characteristics are considered. It is found that in communication links with demanding requirements coherent power combining is necessary.

  1. Kilowatt average-power laser for subpicosecond materials processing

    NASA Astrophysics Data System (ADS)

    Benson, Stephen V.; Neil, George R.; Bohn, Courtlandt L.; Biallas, George; Douglas, David; Dylla, H. Frederick; Fugitt, Jock; Jordan, Kevin; Krafft, Geoffrey; Merminga, Lia; Preble, Joe; Shinn, Michelle D.; Siggins, Tim; Walker, Richard; Yunn, Byung

    2000-04-01

    The performance of laser pulses in the sub-picosecond range for materials processing is substantially enhanced over similar fluences delivered in longer pulses. Recent advances in the development of solid state lasers have progressed significantly toward the higher average powers potentially useful for many applications. Nonetheless, prospects remain distant for multi-kilowatt sub-picosecond solid state systems such as would be required for industrial scale surface processing of metals and polymers. We present operation results from the world's first kilowatt scale ultra-fast materials processing laser. A Free Electron Laser (FEL) called the IR Demo is operational as a User Facility at Thomas Jefferson National Accelerator Facility in Newport News, Virginia, USA. In its initial operation at high average power it is capable of wavelengths in the 2 to 6 micron range and can produce approximately 0.7 ps pulses in a continuous train at approximately 75 MHz. This pulse length has been shown to be nearly optimal for deposition of energy in materials at the surface. Upgrades in the near future will extend operation beyond 10 kW CW average power in the near IR and kilowatt levels of power at wavelengths from 0.3 to 60 microns. This paper will cover the design and performance of this groundbreaking laser and operational aspects of the User Facility.

  2. High Average Power, High Energy Short Pulse Fiber Laser System

    SciTech Connect

    Messerly, M J

    2007-11-13

    Recently continuous wave fiber laser systems with output powers in excess of 500W with good beam quality have been demonstrated [1]. High energy, ultrafast, chirped pulsed fiber laser systems have achieved record output energies of 1mJ [2]. However, these high-energy systems have not been scaled beyond a few watts of average output power. Fiber laser systems are attractive for many applications because they offer the promise of high efficiency, compact, robust systems that are turn key. Applications such as cutting, drilling and materials processing, front end systems for high energy pulsed lasers (such as petawatts) and laser based sources of high spatial coherence, high flux x-rays all require high energy short pulses and two of the three of these applications also require high average power. The challenge in creating a high energy chirped pulse fiber laser system is to find a way to scale the output energy while avoiding nonlinear effects and maintaining good beam quality in the amplifier fiber. To this end, our 3-year LDRD program sought to demonstrate a high energy, high average power fiber laser system. This work included exploring designs of large mode area optical fiber amplifiers for high energy systems as well as understanding the issues associated chirped pulse amplification in optical fiber amplifier systems.

  3. A Thermal and Electrical Analysis of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Vafai, Kambiz

    1997-01-01

    The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.

  4. Skutterudite Compounds For Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre; Caillat, Thierry; Borshchevsky, Alexander; Vandersande, Jan

    1996-01-01

    New semiconducting materials with p-type carrier mobility values much higher than state-of-art semiconductors discovered. Nine compounds, antimonides CoSb(sub3), RhSb(sub3), IrSb(sub3), arsenides CoAs(sub3), RhAs(sub3), IrAs(sub3), and phosphides CoP(sub3), RhP(sub3) and IrP(sub3), exhibit same skutterudite crystallographic structure and form solid solutions of general composition Co(1-x-y)RH(x)Ir(y)P(1-w-z)As(w)Sb(z). Materials exhibit high hole mobilities, high doping levels, and high electronic figures of merit. Some compositions show great potential for application to thermoelectric devices.

  5. An Advanced Time Averaging Modelling Technique for Power Electronic Circuits

    NASA Astrophysics Data System (ADS)

    Jankuloski, Goce

    For stable and efficient performance of power converters, a good mathematical model is needed. This thesis presents a new modelling technique for DC/DC and DC/AC Pulse Width Modulated (PWM) converters. The new model is more accurate than the existing modelling techniques such as State Space Averaging (SSA) and Discrete Time Modelling. Unlike the SSA model, the new modelling technique, the Advanced Time Averaging Model (ATAM) includes the averaging dynamics of the converter's output. In addition to offering enhanced model accuracy, application of linearization techniques to the ATAM enables the use of conventional linear control design tools. A controller design application demonstrates that a controller designed based on the ATAM outperforms one designed using the ubiquitous SSA model. Unlike the SSA model, ATAM for DC/AC augments the system's dynamics with the dynamics needed for subcycle fundamental contribution (SFC) calculation. This allows for controller design that is based on an exact model.

  6. A new FET-bipolar combinational power semiconductor switch

    NASA Technical Reports Server (NTRS)

    Chen, D. Y.; Chandrasekaran, S.; Chin, S. A.

    1984-01-01

    A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.

  7. Strategies for Radiation Hardness Testing of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Soltis, James V. (Technical Monitor); Patton, Martin O.; Harris, Richard D.; Rohal, Robert G.; Blue, Thomas E.; Kauffman, Andrew C.; Frasca, Albert J.

    2005-01-01

    Plans on the drawing board for future space missions call for much larger power systems than have been flown in the past. These systems would employ much higher voltages and currents to enable more powerful electric propulsion engines and other improvements on what will also be much larger spacecraft. Long term human outposts on the moon and planets would also require high voltage, high current and long life power sources. Only hundreds of watts are produced and controlled on a typical robotic exploration spacecraft today. Megawatt systems are required for tomorrow. Semiconductor devices used to control and convert electrical energy in large space power systems will be exposed to electromagnetic and particle radiation of many types, depending on the trajectory and duration of the mission and on the power source. It is necessary to understand the often very different effects of the radiations on the control and conversion systems. Power semiconductor test strategies that we have developed and employed will be presented, along with selected results. The early results that we have obtained in testing large power semiconductor devices give a good indication of the degradation in electrical performance that can be expected in response to a given dose. We are also able to highlight differences in radiation hardness that may be device or material specific.

  8. Using Bayes Model Averaging for Wind Power Forecasts

    NASA Astrophysics Data System (ADS)

    Preede Revheim, Pål; Beyer, Hans Georg

    2014-05-01

    For operational purposes predictions of the forecasts of the lumped output of groups of wind farms spread over larger geographic areas will often be of interest. A naive approach is to make forecasts for each individual site and sum them up to get the group forecast. It is however well documented that a better choice is to use a model that also takes advantage of spatial smoothing effects. It might however be the case that some sites tends to more accurately reflect the total output of the region, either in general or for certain wind directions. It will then be of interest giving these a greater influence over the group forecast. Bayesian model averaging (BMA) is a statistical post-processing method for producing probabilistic forecasts from ensembles. Raftery et al. [1] show how BMA can be used for statistical post processing of forecast ensembles, producing PDFs of future weather quantities. The BMA predictive PDF of a future weather quantity is a weighted average of the ensemble members' PDFs, where the weights can be interpreted as posterior probabilities and reflect the ensemble members' contribution to overall forecasting skill over a training period. In Revheim and Beyer [2] the BMA procedure used in Sloughter, Gneiting and Raftery [3] were found to produce fairly accurate PDFs for the future mean wind speed of a group of sites from the single sites wind speeds. However, when the procedure was attempted applied to wind power it resulted in either problems with the estimation of the parameters (mainly caused by longer consecutive periods of no power production) or severe underestimation (mainly caused by problems with reflecting the power curve). In this paper the problems that arose when applying BMA to wind power forecasting is met through two strategies. First, the BMA procedure is run with a combination of single site wind speeds and single site wind power production as input. This solves the problem with longer consecutive periods where the input data

  9. Thermal management in high average power pulsed compression systems

    SciTech Connect

    Wavrik, R.W.; Reed, K.W.; Harjes, H.C.; Weber, G.J.; Butler, M.; Penn, K.J.; Neau, E.L.

    1992-08-01

    High average power repetitively pulsed compression systems offer a potential source of electron beams which may be applied to sterilization of wastes, treatment of food products, and other environmental and consumer applications. At Sandia National Laboratory, the Repetitive High Energy Pulsed Power (RHEPP) program is developing a 7 stage magnetic pulse compressor driving a linear induction voltage adder with an electron beam diode load. The RHEPP machine is being design to deliver 350 kW of average power to the diode in 60 ns FWHM, 2.5 MV, 3 kJ pulses at a repetition rate of 120 Hz. In addition to the electrical design considerations, the repetition rate requires thermal management of the electrical losses. Steady state temperatures must be kept below the material degradation temperatures to maximize reliability and component life. The optimum design is a trade off between thermal management, maximizing overall electrical performance of the system, reliability, and cost effectiveness. Cooling requirements and configurations were developed for each of the subsystems of RHEPP. Finite element models that combine fluid flow and heat transfer were used to screen design concepts. The analysis includes one, two, and three dimensional heat transfer using surface heat transfer coefficients and boundary layer models. Experiments were conducted to verify the models as well as to evaluate cooling channel fabrication materials and techniques in Metglas wound cores. 10 refs.

  10. Thermal management in high average power pulsed compression systems

    SciTech Connect

    Wavrik, R.W.; Reed, K.W.; Harjes, H.C.; Weber, G.J.; Butler, M.; Penn, K.J.; Neau, E.L.

    1992-01-01

    High average power repetitively pulsed compression systems offer a potential source of electron beams which may be applied to sterilization of wastes, treatment of food products, and other environmental and consumer applications. At Sandia National Laboratory, the Repetitive High Energy Pulsed Power (RHEPP) program is developing a 7 stage magnetic pulse compressor driving a linear induction voltage adder with an electron beam diode load. The RHEPP machine is being design to deliver 350 kW of average power to the diode in 60 ns FWHM, 2.5 MV, 3 kJ pulses at a repetition rate of 120 Hz. In addition to the electrical design considerations, the repetition rate requires thermal management of the electrical losses. Steady state temperatures must be kept below the material degradation temperatures to maximize reliability and component life. The optimum design is a trade off between thermal management, maximizing overall electrical performance of the system, reliability, and cost effectiveness. Cooling requirements and configurations were developed for each of the subsystems of RHEPP. Finite element models that combine fluid flow and heat transfer were used to screen design concepts. The analysis includes one, two, and three dimensional heat transfer using surface heat transfer coefficients and boundary layer models. Experiments were conducted to verify the models as well as to evaluate cooling channel fabrication materials and techniques in Metglas wound cores. 10 refs.

  11. A high-average-power FEL for industrial applications

    SciTech Connect

    Dylla, H.F.; Benson, S.; Bisognano, J.

    1995-12-31

    CEBAF has developed a comprehensive conceptual design of an industrial user facility based on a kilowatt UV (150-1000 nm) and IR (2-25 micron) FEL driven by a recirculating, energy-recovering 200 MeV superconducting radio-frequency (SRF) accelerator. FEL users{endash}CEBAF`s partners in the Laser Processing Consortium, including AT&T, DuPont, IBM, Northrop-Grumman, 3M, and Xerox{endash}plan to develop applications such as polymer surface processing, metals and ceramics micromachining, and metal surface processing, with the overall effort leading to later scale-up to industrial systems at 50-100 kW. Representative applications are described. The proposed high-average-power FEL overcomes limitations of conventional laser sources in available power, cost-effectiveness, tunability and pulse structure. 4 refs., 3 figs., 2 tabs.

  12. Potential of high-average-power solid state lasers

    SciTech Connect

    Emmett, J.L.; Krupke, W.F.; Sooy, W.R.

    1984-09-25

    We discuss the possibility of extending solid state laser technology to high average power and of improving the efficiency of such lasers sufficiently to make them reasonable candidates for a number of demanding applications. A variety of new design concepts, materials, and techniques have emerged over the past decade that, collectively, suggest that the traditional technical limitations on power (a few hundred watts or less) and efficiency (less than 1%) can be removed. The core idea is configuring the laser medium in relatively thin, large-area plates, rather than using the traditional low-aspect-ratio rods or blocks. This presents a large surface area for cooling, and assures that deposited heat is relatively close to a cooled surface. It also minimizes the laser volume distorted by edge effects. The feasibility of such configurations is supported by recent developments in materials, fabrication processes, and optical pumps. Two types of lasers can, in principle, utilize this sheet-like gain configuration in such a way that phase and gain profiles are uniformly sampled and, to first order, yield high-quality (undistorted) beams. The zig-zag laser does this with a single plate, and should be capable of power levels up to several kilowatts. The disk laser is designed around a large number of plates, and should be capable of scaling to arbitrarily high power levels.

  13. Novel SiGe Semiconductor Devices for Cryogenic Power Electronics

    NASA Astrophysics Data System (ADS)

    Ward, R. R.; Dawson, W. J.; Zhu, L.; Kirschman, R. K.; Niu, G.; Nelms, R. M.; Mueller, O.; Hennessy, M. J.; Mueller, E. K.

    2006-03-01

    It is predicted that systems for electrical power generation, conversion and distribution on ships and aerospace vehicles could be made smaller, lighter, more efficient, more versatile, and lower maintenance by operating these systems—partly or entirely—at cryogenic temperatures. In view of this, we have taken initial steps in the investigation and development of SiGe semiconductor devices for cryogenic power applications. We have (1) simulated, designed, fabricated and characterized SiGe power diodes, and (2) evaluated these SiGe diodes in cryogenic power converters. Our target low-end temperature is 55 K, although we characterize devices and circuits down to approximately 30 K. We have demonstrated, experimentally, favorable characteristics for SiGe power diodes and have shown higher conversion efficiency compared to equivalent Si power diodes in a 100-W boost switching DC-DC power converter, over an ambient temperature range of 300 K down to approximately 30 K.

  14. Deep impurity trapping concepts for power semiconductor devices

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1982-01-01

    High voltage semiconductor switches using deep impurity doped silicon now appear feasible for high voltage (1-100 kV), high power (10 Kw) switching and protection functions for future space power applications. Recent discoveries have demonstrated several practical ways of gating deep impurity doped silicon devices in planar configurations and of electrically controlling their characteristics, leading to a vast array of possible circuit applications. A new family of semiconductor switching devices and transducers are possible based on this technology. New deep impurity devices could be simpler than conventional p-n junction devices and yet use the same basic materials and processing techniques. In addition, multiple functions may be possible on a single device as well as increased ratings.

  15. An automatic step adjustment method for average power analysis technique used in fiber amplifiers

    NASA Astrophysics Data System (ADS)

    Liu, Xue-Ming

    2006-04-01

    An automatic step adjustment (ASA) method for average power analysis (APA) technique used in fiber amplifiers is proposed in this paper for the first time. In comparison with the traditional APA technique, the proposed method has suggested two unique merits such as a higher order accuracy and an ASA mechanism, so that it can significantly shorten the computing time and improve the solution accuracy. A test example demonstrates that, by comparing to the APA technique, the proposed method increases the computing speed by more than a hundredfold under the same errors. By computing the model equations of erbium-doped fiber amplifiers, the numerical results show that our method can improve the solution accuracy by over two orders of magnitude at the same amplifying section number. The proposed method has the capacity to rapidly and effectively compute the model equations of fiber Raman amplifiers and semiconductor lasers.

  16. High average power CO II laser MOPA system for Tin target LPP EUV light source

    NASA Astrophysics Data System (ADS)

    Ariga, Tatsuya; Hoshino, Hideo; Endo, Akira

    2007-02-01

    Extreme ultraviolet lithography (EUVL) is the candidate for next generation lithography to be introduced by the semiconductor industry to HVM (high volume manufacturing) in 2013. The power of the EUVL light source has to be at least 115W at a wavelength of 13.5nm. A laser produced plasma (LPP) is the main candidate for this light source but a cost effective laser driver is the key requirement for the realization of this concept. We are currently developing a high power and high repetition rate CO II laser system to achieve 50 W intermediate focus EUV power with a Tin droplet target. We have achieved CE of 2.8% with solid Tin wire target by a transversely excited atmospheric (TEA) CO II laser MOPA system with pulse width, pulse energy and pulse repetition rate as 10~15 ns, 30 mJ and 10 Hz, respectively. A CO II laser system with a short pulse length less than 15 ns, a nominal average power of a few kW, and a repetition rate of 100 kHz, based on RF-excited, fast axial flow CO II laser amplifiers is under development. Output power of about 3 kW has been achieved with a pulse length of 15 ns at 130 kHz repletion rate in a small signal amplification condition with P(20) single line. The phase distortion of the laser beam after amplification is negligible and the beam can be focused to about 150μm diameter in 1/e2. The CO II laser system is reported on short pulse amplification performance using RF-excited fast axial flow lasers as amplifiers. And the CO II laser average output power scaling is shown towards 5~10 kW with pulse width of 15 ns from a MOPA system.

  17. Metal deep engraving with high average power femtosecond lasers

    NASA Astrophysics Data System (ADS)

    Faucon, M.; Mincuzzi, G.; Morin, F.; Hönninger, C.; Mottay, E.; Kling, R.

    2015-03-01

    Deep engraving of 3D textures is a very demanding process for the creation of master tool e. g molds, forming tools or coining dies. As these masters are uses for reproduction of 3D patterns the materials for the tools are typically hard and brittle and thus difficult to machine. The new generation of industrial femtosecond lasers provides both high accuracy engraving results and high ablation rates at the same time. Operation at pulse energies of typically 40 μJ and repetition rates in the Mhz range the detrimental effect of heat accumulation has to be avoided. Therefore high scanning speeds are required to reduce the pulse overlap below 90%. As a consequence scan speeds in the range of 25-50 m/s a needed, which is beyond the capability of galvo scanners. In this paper we present results using a combination of a polygon scanner with a high average power femtosecond laser and compare this to results with conventional scanners. The effects of pulse energy and scan speed of the head on geometrical accuracy are discussed. The quality of the obtained structures is analyzed by means of 3D surface metrology microscope as well as SEM images.

  18. Design concept and performance considerations for fast high power semiconductor switching for high repetition rate and high power excimer laser

    NASA Astrophysics Data System (ADS)

    Goto, Tatsumi; Kakizaki, Kouji; Takagi, Shigeyuki; Satoh, Saburoh; Shinohe, Takashi; Ohashi, Hiromichi; Endo, Fumihiko; Okamura, Katsuya; Ishii, Akira; Teranishi, Tsuneharu; Yasuoka, Koichi

    1997-07-01

    A semiconductor switching power supply has been developed, in which a novel structure semiconductor device, metal-oxide-semiconductor assisted gate-triggered thyristor (MAGT) was incorporated with a single stage magnetic pulse compression circuit (MPC). The MAGT was specially designed to directly replace thyratrons in a power supply for a high repetition rate laser. Compared with conventional high power semiconductor switching devices, it was designed to enable a fast switching, retaining a high blocking voltage and to extremely reduce the transient turn-on power losses, enduring a higher peak current. A maximum peak current density of 32 kA/cm2 and a current density risetime rate di/dt of 142 kA/(cm2×μs) were obtained at the chip area with an applied anode voltage of 1.5 kV. A MAGT switching unit connecting 32 MAGTs in series was capable of switching on more than 25 kV-300 A at a repetition rate of 5 kHz, which, coupled with the MPC, was equivalent to the capability of a high power thyratron. A high repetition rate and high power XeCl excimer laser was excited by the power supply. The results confirmed the stable laser operation of a repetition rate of up to 5 kHz, the world record to our knowledge. An average output power of 0.56 kW was obtained at 5 kHz where the shortage of the total discharge current was subjoined by a conventional power supply with seven parallel switching thyratrons, simultaneously working, for the MAGT power supply could not switch a greater current than that switched by one thyratron. It was confirmed by those excitations that the MAGT unit with the MPC could replace a high power commercial thyratron directly for excimer lasers. The switching stability was significantly superior to that of the thyratron in a high repetition rate region, judging from the discharge current wave forms. It should be possible for the MAGT unit, in the future, to directly switch the discharge current within a rise time of 0.1 μs with a magnetic assist.

  19. Noise power spectral density of a fibre scattered-light interferometer with a semiconductor laser source

    SciTech Connect

    Alekseev, A E; Potapov, V T

    2013-10-31

    Spectral characteristics of the noise intensity fluctuations at the output of a scattered-light interferometer, caused by phase fluctuations of semiconductor laser radiation are considered. This kind of noise is one of the main factors limiting sensitivity of interferometric sensors. For the first time, to our knowledge, the expression is obtained for the average noise power spectral density at the interferometer output versus the degree of a light source coherence and length of the scattering segment. Also, the approximate expressions are considered which determine the power spectral density in the low-frequency range (up to 200 kHz) and in the limiting case of extended scattering segments. The expression obtained for the noise power spectral density agrees with experimental normalised power spectra with a high accuracy. (interferometry of radiation)

  20. High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

    NASA Technical Reports Server (NTRS)

    Elmes, John

    2015-01-01

    Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

  1. Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Hung, Nguyen T.; Hasdeo, Eddwi H.; Nugraha, Ahmad R. T.; Dresselhaus, Mildred S.; Saito, Riichiro

    2016-07-01

    We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ , bulk semiconductors may give a higher power factor compared to the lower dimensional ones.

  2. Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors.

    PubMed

    Hung, Nguyen T; Hasdeo, Eddwi H; Nugraha, Ahmad R T; Dresselhaus, Mildred S; Saito, Riichiro

    2016-07-15

    We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ, bulk semiconductors may give a higher power factor compared to the lower dimensional ones. PMID:27472126

  3. Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors.

    PubMed

    Hung, Nguyen T; Hasdeo, Eddwi H; Nugraha, Ahmad R T; Dresselhaus, Mildred S; Saito, Riichiro

    2016-07-15

    We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ, bulk semiconductors may give a higher power factor compared to the lower dimensional ones.

  4. More Efficient Power Conversion for EVs: Gallium-Nitride Advanced Power Semiconductor and Packaging

    SciTech Connect

    2010-02-01

    Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device’s efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi’s GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.

  5. Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

    NASA Astrophysics Data System (ADS)

    Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

    2016-03-01

    Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

  6. High average power magnetic modulator for metal vapor lasers

    DOEpatents

    Ball, Don G.; Birx, Daniel L.; Cook, Edward G.; Miller, John L.

    1994-01-01

    A three-stage magnetic modulator utilizing magnetic pulse compression designed to provide a 60 kV pulse to a copper vapor laser at a 4.5 kHz repetition rate is disclosed. This modulator operates at 34 kW input power. The circuit includes a step up auto transformer and utilizes a rod and plate stack construction technique to achieve a high packing factor.

  7. Present and Future of Semiconductor Pulsed Power Generator ˜Role of Power Semiconductor Devices in Plasma Research˜ 6.High-Speed, Large-Current Power Semiconductors for Pulse Power Generation

    NASA Astrophysics Data System (ADS)

    Takata, Ikunori

    This paper describes the operation principles and limits of power semiconductors. In addition, operation mechanisms of the new pulse power devices, SOS (Semiconductor Opening Switch) and dynistors, are explained qualitatively. The fastest operating power device is the series connection of comparatively low-voltage devices. For large-current operation, a uniformly operating pin-diode structure device is essential. An SOS is constructed from dozens of medium voltage (about 3kV) special hard-recovery diodes. This can shut off 2kA current at 10kV with in 10ns. The dynistor has n+pnp+ four layers and two electrodes. Serial-connected dynistors have the potential to replace thyratrons. These new devices can endure over 10 kA/cm2 at much higher voltage than their static breakdown values in the repetitive use more than 1011 times.

  8. Development of High Average Power Lasers for the Photon Collider

    SciTech Connect

    Gronberg, Jeff; Stuart, Brent; Seryi, Andrei; /SLAC

    2012-07-05

    The laser and optics system for the photon collider seeks to minimize the required laser power by using an optical stacking cavity to recirculate the laser light. An enhancement of between 300 to 400 is desired. In order to achieve this the laser pulses which drive the cavity must precisely match the phase of the pulse circulating within the cavity. We report on simulations of the performance of a stacking cavity to various variations of the drive laser in order to specify the required tolerances of the laser system.

  9. Optimizing average power in low quantum defect lasers.

    PubMed

    Bowman, S R

    2015-11-01

    Waste heat generation is a generic problem in high-power solid-state laser systems. One way to reduce heat loading while improving efficiency is to reduce the laser's quantum defect. This paper presents a simple analysis of low quantum defect laser materials. In these laser materials, the effects of fluorescent cooling and weak loss processes should not be ignored. Simple expressions are developed for efficiency and heating in a steady-state purely radiative material. These expressions are then extended to include weak losses and fluorescence reabsorption. Evaluation of these relations using ytterbium-doped YAG is used to illustrate several optimization schemes and the impact of realistic losses. PMID:26560625

  10. Application of copper-carbon fiber composites to power semiconductor devices

    NASA Technical Reports Server (NTRS)

    Kuniya, Keiichi; Arakawa, Hideo; Sakaue, Tadashi; Minorikawa, Hitoshi; Akeyama, Kenji; Sakamoto, Tatsuji

    1988-01-01

    Copper-carbon composite electrodes are used in a series of power semiconductor devices, i.e., resin molded diodes, button-type diodes, stud-type diodes, power modules, and integrated circuit igniter modules. The properties of these power semiconductor devices compare favorably with those conventional devices using Mo or W electrodes. In thermal fatigue tests, no degradation in the electrical and mechanical characteristics of these devices are observed. The new composite electrode with carbon fibers satisfies all of the major requirements for the electrodes in power semiconductor devices.

  11. Energy stability in a high average power FEL

    SciTech Connect

    Mermings, L.; Bisognano, J.; Delayen, J.

    1995-12-31

    Recirculating, energy-recovering linacs can be used as driver accelerators for high power FELs. Instabilities which arise from fluctuations of the cavity fields or beam current are investigated. Energy changes can cause beam loss on apertures, or, when coupled to M, phase oscillations. Both effects change the beam induced voltage in the cavities and can lead to unstable variations of the accelerating field. Stability analysis for small perturbations from equilibrium is performed and threshold currents are determined. Furthermore, the analytical model is extended to include feedback. Comparison with simulation results derived from direct integration of the equations of motion is presented. Design strategies to increase the instability threshold are discussed and the UV Demo FEL, proposed for construction at CEBAF, and the INP Recuperatron at Novosibirsk are used as examples.

  12. Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser.

    PubMed

    Goldberg, L; Kliner, D A

    1995-05-15

    Tunable UV radiation near 215 nm was produced by frequency quadrupling the 860-nm emission of a mode-locked external-cavity compound semiconductor laser containing a tapered GaAlAs amplifier. A KNbO(3) crystal generated the 430-nm second harmonic, which was doubled by a beta-BaB(2)O(4) crystal, producing tunable UV radiation with as much as 15 microW of average power. PMID:19859453

  13. Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser

    SciTech Connect

    Goldberg, L.; Kliner, D.A.V.

    1995-05-15

    Tunable UV radiation near 215 nm was produced by frequency quadrupling the 860-nm emission of a mode-locked external-cavity compound semiconductor laser containing a tapered GaAlAs amplifier. A KNbO{sub 3} crystal generated the 430-nm second harmonic, which was doubled by a {beta}-BaB{sub 2}O{sub 4} crystal, producing tunable UV radiation with as much as 15 {mu}W of average power.

  14. Development of High Average Power Lasers for the Photon Collider

    SciTech Connect

    Gronberg, J; Stuart, B; Seryi, A

    2010-05-17

    The laser and optics system for the photon collider seeks to minimize the required laser power by using an optical stacking cavity to recirculate the laser light. An enhancement of between 300 to 400 is desired. In order to achieve this the laser pulses which drive the cavity must precisely match the phase of the pulse circulating within the cavity. We report on simulations of the performance of a stacking cavity to various variations of the drive laser in order to specify the required tolerances of the laser system. We look at the behavior of a simple four mirror cavity as shown in Fig. 1. As a unit input pulse is applied to the coupling mirror a pulse begins to build up in the interior of the cavity. If the drive pulses and the interior pulse arrive at the coupling mirror in phase the interior pulse will build up to a larger value. The achievable enhancement is a strong function of the reflectivity of the cavities. The best performance if attained when the reflectivities of the input coupler is matched to the internal reflectivities of the cavity. In Fig. 2 we show the build up of the internal pulse after a certain number of drive pulses, assuming the input coupler has a reflectivity of 0.996 and the interior mirrors have 0.998 reflectivity. With these parameters the cavity will reach an enhancement factor of 450. Reducing the coupler reflectivity gives a faster cavity loading rate but with a reduced enhancement of the internal pulse. The enhancement as a function of coupler reflectivity and total internal cavity reflectivity is shown in Fig. 3. The best enhancement is achieved when the coupling mirror is matched to the reflectivity of the cavity. A coupler reflectivity just below the internal cavity reflectivity minimizes the required laser power.

  15. Method and system for powering and cooling semiconductor lasers

    SciTech Connect

    Telford, Steven J; Ladran, Anthony S

    2014-02-25

    A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

  16. High average power lasers for future particle accelerators

    NASA Astrophysics Data System (ADS)

    Dawson, Jay W.; Crane, John K.; Messerly, Michael J.; Prantil, Matthew A.; Pax, Paul H.; Sridharan, Arun K.; Allen, Graham S.; Drachenberg, Derrek R.; Phan, Henry H.; Heebner, John E.; Ebbers, Christopher A.; Beach, Raymond J.; Hartouni, Edward P.; Siders, Craig W.; Spinka, Thomas M.; Barty, C. P. J.; Bayramian, Andrew J.; Haefner, Leon C.; Albert, Felicie; Lowdermilk, W. Howard; Rubenchik, Alexander M.; Bonanno, Regina E.

    2012-12-01

    Lasers are of increasing interest to the accelerator community and include applications as diverse as stripping electrons from hydrogen atoms, sources for Compton scattering, efficient high repetition rate lasers for dielectric laser acceleration, peta-watt peak power lasers for laser wake field and high energy, short pulse lasers for proton and ion beam therapy. The laser requirements for these applications are briefly surveyed. State of the art of laser technologies with the potential to eventually meet those requirements are reviewed. These technologies include diode pumped solid state lasers (including cryogenic), fiber lasers, OPCPA based lasers and Ti:Sapphire lasers. Strengths and weakness of the various technologies are discussed along with the most important issues to address to get from the current state of the art to the performance needed for the accelerator applications. Efficiency issues are considered in detail as in most cases the system efficiency is a valuable indicator of the actual ability of a given technology to deliver the application requirements.

  17. Scalability of components for kW-level average power few-cycle lasers.

    PubMed

    Hädrich, Steffen; Rothhardt, Jan; Demmler, Stefan; Tschernajew, Maxim; Hoffmann, Armin; Krebs, Manuel; Liem, Andreas; de Vries, Oliver; Plötner, Marco; Fabian, Simone; Schreiber, Thomas; Limpert, Jens; Tünnermann, Andreas

    2016-03-01

    In this paper, the average power scalability of components that can be used for intense few-cycle lasers based on nonlinear compression of modern femtosecond solid-state lasers is investigated. The key components of such a setup, namely, the gas-filled waveguides, laser windows, chirped mirrors for pulse compression and low dispersion mirrors for beam collimation, focusing, and beam steering are tested under high-average-power operation using a kilowatt cw laser. We demonstrate the long-term stable transmission of kW-level average power through a hollow capillary and a Kagome-type photonic crystal fiber. In addition, we show that sapphire substrates significantly improve the average power capability of metal-coated mirrors. Ultimately, ultrabroadband dielectric mirrors show negligible heating up to 1 kW of average power. In summary, a technology for scaling of few-cycle lasers up to 1 kW of average power and beyond is presented.

  18. Scalability of components for kW-level average power few-cycle lasers.

    PubMed

    Hädrich, Steffen; Rothhardt, Jan; Demmler, Stefan; Tschernajew, Maxim; Hoffmann, Armin; Krebs, Manuel; Liem, Andreas; de Vries, Oliver; Plötner, Marco; Fabian, Simone; Schreiber, Thomas; Limpert, Jens; Tünnermann, Andreas

    2016-03-01

    In this paper, the average power scalability of components that can be used for intense few-cycle lasers based on nonlinear compression of modern femtosecond solid-state lasers is investigated. The key components of such a setup, namely, the gas-filled waveguides, laser windows, chirped mirrors for pulse compression and low dispersion mirrors for beam collimation, focusing, and beam steering are tested under high-average-power operation using a kilowatt cw laser. We demonstrate the long-term stable transmission of kW-level average power through a hollow capillary and a Kagome-type photonic crystal fiber. In addition, we show that sapphire substrates significantly improve the average power capability of metal-coated mirrors. Ultimately, ultrabroadband dielectric mirrors show negligible heating up to 1 kW of average power. In summary, a technology for scaling of few-cycle lasers up to 1 kW of average power and beyond is presented. PMID:26974623

  19. Direct digital simulation of power semiconductor-controlled electrical machines

    NASA Astrophysics Data System (ADS)

    Bahnassy, H. M.

    1981-06-01

    Generalized computer programming techniques for simulating power semiconductor-controlled electric machines in coil-variable representation are presented. These techniques are developed primarily for implementation in large scale general purpose computer-aided design and analysis (CADA) circuit programs. To demonstrate the validity of the developed techniques, a coil-variable model of a brushless synchronous generator with an ac exciter and rotating rectifiers was constructed. The performance of the control system (thyristor voltage regulator) is represented by a transfer function block diagram model. The CADA circuit program used is the recently developed SUPER SCEPTRE program. The model is validated using the design data and test results of a 60 kVA brushless generator. Numerous computer simulation cases are presented including the steady state and transient conditions. Brushless generator performance under diode failure faults (opened-diode, shorted-diode) is simulated. The effects of the external faults, at the main generator terminals, on the main generator, as well as its excitation system currents, are simulated.

  20. Improved low-power semiconductor diode lasers for photodynamic therapy in veterinary medicine

    NASA Astrophysics Data System (ADS)

    Lee, Susanne M.; Mueller, Eduard K.; Van de Workeen, Brian C.; Mueller, Otward M.

    2001-05-01

    Cryogenically cooling semiconductor diode lasers provides higher power output, longer device lifetime, and greater monochromaticity. While these effects are well known, such improvements have not been quantified, and thus cryogenically operated semiconductor lasers have not been utilized in photodynamic therapy (PDT). We report quantification of these results from laser power meter and photospectrometer data. The emission wavelengths of these low power multiple quantum well semiconductor lasers were found to decrease and become more monochromatic with decreasing temperature. Significant power output improvements also were obtained at cryogenic temperatures. In addition, the threshold current, i.e. the current at which lasing begins, decreased with decreasing temperature. This lower threshold current combined with the increased power output produced dramatically higher device efficiencies. It is proposed that cryogenic operation of semiconductor diode lasers will reduce the number of devices needed to produce the requisite output for many veterinary and medical applications, permitting significant cost reductions.

  1. Energy and average power scalable optical parametric chirped-pulse amplification in yttrium calcium oxyborate

    NASA Astrophysics Data System (ADS)

    Liao, Zhi M.; Jovanovic, Igor; Ebbers, Chris A.; Fei, Yiting; Chai, Bruce

    2006-05-01

    Optical parametric chirped-pulse amplification (OPCPA) in nonlinear crystals has the potential to produce extremes of peak and average power but is limited either in energy by crystal growth issues or in average power by crystal thermo-optic characteristics. Recently, large (7.5 cm diameter × 25 cm length) crystals of yttrium calcium oxyborate (YCOB) have been grown and utilized for high-average-power second-harmonic generation. Further, YCOB has the necessary thermo-optic properties required for scaling OPCPA systems to high peak and average power operation for wavelengths near 1 μm. We report what is believed to be the first use of YCOB for OPCPA. Scalability to higher peak and average power is addressed.

  2. Potential for efficient frequency conversion at high average power using solid state nonlinear optical materials

    SciTech Connect

    Eimerl, D.

    1985-10-28

    High-average-power frequency conversion using solid state nonlinear materials is discussed. Recent laboratory experience and new developments in design concepts show that current technology, a few tens of watts, may be extended by several orders of magnitude. For example, using KD*P, efficient doubling (>70%) of Nd:YAG at average powers approaching 100 KW is possible; and for doubling to the blue or ultraviolet regions, the average power may approach 1 MW. Configurations using segmented apertures permit essentially unlimited scaling of average power. High average power is achieved by configuring the nonlinear material as a set of thin plates with a large ratio of surface area to volume and by cooling the exposed surfaces with a flowing gas. The design and material fabrication of such a harmonic generator are well within current technology.

  3. Energy and average power scalable optical parametric chirped-pulse amplification in yttrium calcium oxyborate.

    PubMed

    Liao, Zhi M; Jovanovic, Igor; Ebbers, Chris A; Fei, Yiting; Chai, Bruce

    2006-05-01

    Optical parametric chirped-pulse amplification (OPCPA) in nonlinear crystals has the potential to produce extremes of peak and average power but is limited either in energy by crystal growth issues or in average power by crystal thermo-optic characteristics. Recently, large (7.5 cm diameter x 25 cm length) crystals of yttrium calcium oxyborate (YCOB) have been grown and utilized for high-average-power second-harmonic generation. Further, YCOB has the necessary thermo-optic properties required for scaling OPCPA systems to high peak and average power operation for wavelengths near 1 microm. We report what is believed to be the first use of YCOB for OPCPA. Scalability to higher peak and average power is addressed.

  4. Accurate analytical modelling of cosmic ray induced failure rates of power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Bauer, Friedhelm D.

    2009-06-01

    A new, simple and efficient approach is presented to conduct estimations of the cosmic ray induced failure rate for high voltage silicon power devices early in the design phase. This allows combining common design issues such as device losses and safe operating area with the constraints imposed by the reliability to result in a better and overall more efficient design methodology. Starting from an experimental and theoretical background brought forth a few yeas ago [Kabza H et al. Cosmic radiation as a cause for power device failure and possible countermeasures. In: Proceedings of the sixth international symposium on power semiconductor devices and IC's, Davos, Switzerland; 1994. p. 9-12, Zeller HR. Cosmic ray induced breakdown in high voltage semiconductor devices, microscopic model and possible countermeasures. In: Proceedings of the sixth international symposium on power semiconductor devices and IC's, Davos, Switzerland; 1994. p. 339-40, and Matsuda H et al. Analysis of GTO failure mode during d.c. blocking. In: Proceedings of the sixth international symposium on power semiconductor devices and IC's, Davos, Switzerland; 1994. p. 221-5], an exact solution of the failure rate integral is derived and presented in a form which lends itself to be combined with the results available from commercial semiconductor simulation tools. Hence, failure rate integrals can be obtained with relative ease for realistic two- and even three-dimensional semiconductor geometries. Two case studies relating to IGBT cell design and planar junction termination layout demonstrate the purpose of the method.

  5. Far field and wavefront characterization of a high-power semiconductor laser for free space optical communications

    NASA Technical Reports Server (NTRS)

    Cornwell, Donald M., Jr.; Saif, Babak N.

    1991-01-01

    The spatial pointing angle and far field beamwidth of a high-power semiconductor laser are characterized as a function of CW power and also as a function of temperature. The time-averaged spatial pointing angle and spatial lobe width were measured under intensity-modulated conditions. The measured pointing deviations are determined to be well within the pointing requirements of the NASA Laser Communications Transceiver (LCT) program. A computer-controlled Mach-Zehnder phase-shifter interferometer is used to characterize the wavefront quality of the laser. The rms phase error over the entire pupil was measured as a function of CW output power. Time-averaged measurements of the wavefront quality are also made under intensity-modulated conditions. The measured rms phase errors are determined to be well within the wavefront quality requirements of the LCT program.

  6. Analytical expressions for maximum wind turbine average power in a Rayleigh wind regime

    SciTech Connect

    Carlin, P.W.

    1996-12-01

    Average or expectation values for annual power of a wind turbine in a Rayleigh wind regime are calculated and plotted as a function of cut-out wind speed. This wind speed is expressed in multiples of the annual average wind speed at the turbine installation site. To provide a common basis for comparison of all real and imagined turbines, the Rayleigh-Betz wind machine is postulated. This machine is an ideal wind machine operating with the ideal Betz power coefficient of 0.593 in a Rayleigh probability wind regime. All other average annual powers are expressed in fractions of that power. Cases considered include: (1) an ideal machine with finite power and finite cutout speed, (2) real machines operating in variable speed mode at their maximum power coefficient, and (3) real machines operating at constant speed.

  7. Bright High Average Power Table-top Soft X-Ray Lasers

    SciTech Connect

    Rocca, Jorge; Reagan, Brendon; Wernsing, Keith; Luther, Brad; Curtis, Alden; Nichols,, Anthony; Wang, Yong; Alessi, David; Martz, Dale; Yin, Liang; Wang, Shoujun; Berrill, Mark A; Furch, Federico; Woolston, Mark; Patel, Dinesh; Marconi, Mario; Menoni, Carmen

    2012-01-01

    We have demonstrated the generation of bright soft x-ray laser pulses with record-high average power from compact plasma amplifiers excited by ultrafast solid state lasers. These lasers have numerous applications in nanoscience and nanotechnology.

  8. Modulation characteristics of a high-power semiconductor Master Oscillator Power Amplifier (MOPA)

    NASA Technical Reports Server (NTRS)

    Cornwell, Donald Mitchell, Jr.

    1992-01-01

    A semiconductor master oscillator-power amplifier was demonstrated using an anti-reflection (AR) coated broad area laser as the amplifier. Under CW operation, diffraction-limited single-longitudinal-mode powers up to 340 mW were demonstrated. The characteristics of the far-field pattern were measured and compared to a two-dimensional reflective Fabry-Perot amplifier model of the device. The MOPA configuration was modulated by the master oscillator. Prior to injection into the amplifier, the amplitude and frequency modulation properties of the master oscillator were characterized. The frequency response of the MOPA configuration was characterized for an AM/FM modulated injection beam, and was found to be a function of the frequency detuning between the master oscillator and the resonant amplifier. A shift in the phase was also observed as a function of frequency detuning; this phase shift is attributed to the optical phase shift imparted to a wave reflected from a Fabry-Perot cavity. Square-wave optical pulses were generated at 10 MHz and 250 MHz with diffraction-limited peak powers of 200 mW and 250 mW. The peak power for a given modulation frequency is found to be limited by the injected power and the FM modulation at that frequency. The modulation results make the MOPA attractive for use as a transmitter source in applications such as free-space communications and ranging/altimetry.

  9. Technical options for high average power free electron milimeter-wave and laser devices

    NASA Technical Reports Server (NTRS)

    Swingle, James C.

    1989-01-01

    Many of the potential space power beaming applications require the generation of directed energy beams with respectable amounts of average power (MWs). A tutorial summary is provided here on recent advances in the laboratory aimed at producing direct conversion of electrical energy to electromagnetic radiation over a wide spectral regime from microwaves to the ultraviolet.

  10. High-average-power operation of a pulsed Raman fiber amplifier at 1686 nm.

    PubMed

    Yao, Weichao; Chen, Bihui; Zhang, Jianing; Zhao, Yongguang; Chen, Hao; Shen, Deyuan

    2015-05-01

    We report on high-average-power operation of a pulsed Raman fiber amplifier at ~1686 nm which cannot be covered by rare-earth-doped fiber lasers. The Raman fiber amplifier was pumped by a home-made 1565.2 nm Q-switched Er,Yb fiber laser and worked at a repetition frequency of 184 kHz. With 0.8 km Raman fiber, 4.4 W of average output power at the 1st order Stokes wavelength of 1686.5 nm was obtained for launched pump power of 16.2 W, corresponding to an optical-to-optical conversion efficiency of 27.2%. Further increasing the pump power, high-order Stokes waves grew gradually, resulting in a total output power of 6.7 W at the 19.2 W launched pump power. PMID:25969195

  11. Performance and production requirements for the optical components in a high-average-power laser system

    SciTech Connect

    Chow, R.; Doss, F.W.; Taylor, J.R.; Wong, J.N.

    1999-07-02

    Optical components needed for high-average-power lasers, such as those developed for Atomic Vapor Laser Isotope Separation (AVLIS), require high levels of performance and reliability. Over the past two decades, optical component requirements for this purpose have been optimized and performance and reliability have been demonstrated. Many of the optical components that are exposed to the high power laser light affect the quality of the beam as it is transported through the system. The specifications for these optics are described including a few parameters not previously reported and some component manufacturing and testing experience. Key words: High-average-power laser, coating efficiency, absorption, optical components

  12. Transparent ceramic photo-optical semiconductor high power switches

    DOEpatents

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  13. Power conversion efficiency of semiconductor injection lasers and laser arrays in CW operation

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1985-01-01

    The problem of optimizing power conversion efficiency of semiconductor lasers and laser arrays and minimizing efficiency degradation due to temperature effects is treated. A method for calculating this efficiency is described and some calculated results are presented and discussed. Under some conditions, a small increase in the thermal resistance of the device can result in a large reduction of its efficiency. Temperature effects are important in high-power semiconductor laser, and in particular in laser arrays, where low thermal resistance heat sinking may be crucial to the device operation.

  14. Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion

    SciTech Connect

    2010-09-01

    ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

  15. Scaling up a high average power dye laser amplifier and its new pumping designs

    SciTech Connect

    Takehisa, K.

    1997-01-01

    Scaling up of a high average power dye laser amplifier is discussed. Differences in the characteristics between a high average power dye laser amplifier with transverse pumping and longitudinal pumping are presented by a simple theory and simulations. The simulation results for dye laser amplifiers of 10-kW average output power show that longitudinal pumping is as efficient as transverse pumping with the potential of orders of magnitude lower dye flow rate. New pumping designs are also proposed for a dye laser amplifier aimed to achieve high gain with high efficiency to reduce the number of amplifier stages. Simulation results suggest that the new designs, in comparison with a conventional amplifier, can produce several orders of magnitude higher gain without decreasing the conversion efficiency. {copyright} 1997 Optical Society of America

  16. Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

    SciTech Connect

    GopiReddy, Lakshmi Reddy; Tolbert, Leon M.; Ozpineci, Burak; Pinto, Joao O. P.

    2015-07-15

    Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. In conclusion, the degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation.

  17. Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

    DOE PAGES

    GopiReddy, Lakshmi Reddy; Tolbert, Leon M.; Ozpineci, Burak; Pinto, Joao O. P.

    2015-07-15

    Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. In conclusion, the degradation in the life of the IGBT power device is predicted basedmore » on time-dependent temperature calculation.« less

  18. Silicon carbide, a semiconductor for space power electronics

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Matus, Lawrence G.

    1991-01-01

    After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

  19. Silicon carbide, a semiconductor for space power electronics

    NASA Technical Reports Server (NTRS)

    Powell, J. A.; Matus, Lawrence G.

    1991-01-01

    After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

  20. Very high average power solid-state lasers pumped by remotely located nuclear-driven fluorescers

    NASA Astrophysics Data System (ADS)

    Boody, F. P.; Prelas, M. A.

    A total system efficiency of 3 percent is calculated for very high average power active mirror solid-state laser amplifiers of Nd,Cr:GSGG, pumped by remotely generated visible nuclear-driven alkali metal excimer fluorescence. The fluorescence is transported around a radiation shield, separating the fluorescer and the laser, by a large diameter-to-length ratio hollow lightpipe. Parameters are presented for a system producing 1-ms-long 12 MW pulses at 1 Hz, for an average power output of 12 kW.

  1. MOX Average Power Test 30 GWd/MT PIE: Quick Look

    SciTech Connect

    MORRIS, RN

    2001-02-14

    This report summarizes the early results of the post irradiation examination of the 30 GWd/MT MOX Average Power Test Capsules (numbers 3 and 10). The purpose of this preliminary examination is to document and monitor the progress of the MOX Average Power Test Irradiation. The capsules and their fuel pins were found to be in excellent condition. Measurement of the fission gas release fraction (about 1.50 to 2.26%), preliminary fuel stack gamma scan measurements, and preliminary fuel pin diameter measurements indicate that the fuel is behaving as expected.

  2. High average power quasi-CW single-mode green and UV fiber lasers

    NASA Astrophysics Data System (ADS)

    Avdokhin, Alexey; Gapontsev, Valentin; Kadwani, Pankaj; Vaupel, Andreas; Samartsev, Igor; Platonov, Nicholai; Yusim, Alex; Myasnikov, Daniil

    2015-02-01

    Kilowatt-level narrow-linewidth SM ytterbium fiber laser operating in high-repetition-rate QCW regime was used to obtain 700 W average power at 532 nm with single-mode beam quality and wall-plug efficiency of over 23 %. To the best of our knowledge, this is ~60 % higher power than previously reported for single-mode green lasers based on other platforms, and also is ~30 % increase comparing to the previous result obtained by our group on the base of similar fiber laser platform. We have also experimentally proved that the same type of fiber laser can be used for generating of world-record levels of power at other wavelengths of visible and UV spectral ranges by employing cascaded non-linear frequency conversion. Thus, utilizing frequency tripling in 2 LBO crystals, we achieved over 160 W average power of nearly single-mode UV light at 355 nm with THG efficiency of more than 25 %. As far as we know, this is the highest output power ever reported for UV laser with nearly diffraction limited beam quality. We also conducted some preliminary experiments to demonstrate suitability of our approach for generating longer wavelengths of the visible spectrum. By pre-shifting fundamental emission wavelength in fiber Raman converter, followed by frequency doubling in NCPM LBO, we obtained average powers of 36 W at 589 nm and 27 W at 615 nm. These proof-of-concept experiments were performed with low-power pump laser and were not fully optimized with respect to frequency conversion. Our analysis indicates that employing kW-level QCW ytterbium laser with optimized SRS and SHG converters we can achieve hundreds of Watts of average power in red and orange color with single-mode beam quality.

  3. Estimating ensemble average power delivered by a piezoelectric patch actuator to a non-deterministic subsystem

    NASA Astrophysics Data System (ADS)

    Muthalif, Asan G. A.; Wahid, Azni N.; Nor, Khairul A. M.

    2014-02-01

    Engineering systems such as aircraft, ships and automotive are considered built-up structures. Dynamically they are taught of as being fabricated from many components that are classified as 'deterministic subsystems' (DS) and 'non-deterministic subsystems' (Non-DS). Structures' response of the DS is deterministic in nature and analysed using deterministic modelling methods such as finite element (FE) method. The response of Non-DS is statistical in nature and estimated using statistical modelling technique such as statistical energy analysis (SEA). SEA method uses power balance equation, in which any external input to the subsystem must be represented in terms of power. Often, input force is taken as point force and ensemble average power delivered by point force is already well-established. However, the external input can also be applied in the form of moments exerted by a piezoelectric (PZT) patch actuator. In order to be able to apply SEA method for input moments, a mathematical representation for moment generated by PZT patch in the form of average power is needed, which is attempted in this paper. A simply-supported plate with attached PZT patch is taken as a benchmark model. Analytical solution to estimate average power is derived using mobility approach. Ensemble average of power given by the PZT patch actuator to the benchmark model when subjected to structural uncertainties is also simulated using Lagrangian method and FEA software. The analytical estimation is compared with the Lagrangian model and FE method for validation. The effects of size and location of the PZT actuators on the power delivered to the plate are later investigated.

  4. Development of a high average power, CW, MM-wave FEL

    SciTech Connect

    Ramian, G.

    1995-12-31

    Important operational attributes of FELs remain to be demonstrated including high average power and single-frequency, extremely narrow-linewidth lasing. An FEL specifically designed to achieve these goals for scientific research applications is currently under construction. Its most salient feature is operation in a continuous-wave (CW) mode with an electrostatically generated, high-current, recirculating, DC electron beam.

  5. Image registration and averaging of low laser power two-photon fluorescence images of mouse retina.

    PubMed

    Alexander, Nathan S; Palczewska, Grazyna; Stremplewski, Patrycjusz; Wojtkowski, Maciej; Kern, Timothy S; Palczewski, Krzysztof

    2016-07-01

    Two-photon fluorescence microscopy (TPM) is now being used routinely to image live cells for extended periods deep within tissues, including the retina and other structures within the eye . However, very low laser power is a requirement to obtain TPM images of the retina safely. Unfortunately, a reduction in laser power also reduces the signal-to-noise ratio of collected images, making it difficult to visualize structural details. Here, image registration and averaging methods applied to TPM images of the eye in living animals (without the need for auxiliary hardware) demonstrate the structural information obtained with laser power down to 1 mW. Image registration provided between 1.4% and 13.0% improvement in image quality compared to averaging images without registrations when using a high-fluorescence template, and between 0.2% and 12.0% when employing the average of collected images as the template. Also, a diminishing return on image quality when more images were used to obtain the averaged image is shown. This work provides a foundation for obtaining informative TPM images with laser powers of 1 mW, compared to previous levels for imaging mice ranging between 6.3 mW [Palczewska G., Nat Med.20, 785 (2014) Sharma R., Biomed. Opt. Express4, 1285 (2013)].

  6. High Average Power Operation of a Scraper-Outcoupled Free-Electron Laser

    SciTech Connect

    Michelle D. Shinn; Chris Behre; Stephen Vincent Benson; Michael Bevins; Don Bullard; James Coleman; L. Dillon-Townes; Tom Elliott; Joe Gubeli; David Hardy; Kevin Jordan; Ronald Lassiter; George Neil; Shukui Zhang

    2004-08-01

    We describe the design, construction, and operation of a high average power free-electron laser using scraper outcoupling. Using the FEL in this all-reflective configuration, we achieved approximately 2 kW of stable output at 10 um. Measurements of gain, loss, and output mode will be compared with our models.

  7. Image registration and averaging of low laser power two-photon fluorescence images of mouse retina.

    PubMed

    Alexander, Nathan S; Palczewska, Grazyna; Stremplewski, Patrycjusz; Wojtkowski, Maciej; Kern, Timothy S; Palczewski, Krzysztof

    2016-07-01

    Two-photon fluorescence microscopy (TPM) is now being used routinely to image live cells for extended periods deep within tissues, including the retina and other structures within the eye . However, very low laser power is a requirement to obtain TPM images of the retina safely. Unfortunately, a reduction in laser power also reduces the signal-to-noise ratio of collected images, making it difficult to visualize structural details. Here, image registration and averaging methods applied to TPM images of the eye in living animals (without the need for auxiliary hardware) demonstrate the structural information obtained with laser power down to 1 mW. Image registration provided between 1.4% and 13.0% improvement in image quality compared to averaging images without registrations when using a high-fluorescence template, and between 0.2% and 12.0% when employing the average of collected images as the template. Also, a diminishing return on image quality when more images were used to obtain the averaged image is shown. This work provides a foundation for obtaining informative TPM images with laser powers of 1 mW, compared to previous levels for imaging mice ranging between 6.3 mW [Palczewska G., Nat Med.20, 785 (2014) Sharma R., Biomed. Opt. Express4, 1285 (2013)]. PMID:27446697

  8. The LUCIA project: a high average power ytterbium diode pumped solid state laser chain

    NASA Astrophysics Data System (ADS)

    Bourdet, Gilbert L.; Chanteloup, Jean-Christophe; Fulop, A.; Julien, Y.; Migus, Arnold

    2004-04-01

    With the goal to set up a high average power Diode Pumped Solid State Laser (100 Joules/10 Hz/10 ns), the Laboratory for Use of Intense Laser (LULI) is now studying various solutions concerning the amplifier medium, the cooling, the pumping and the extraction architectures. In this paper, we present the last states of these developments and the solutions already chosen.

  9. Image registration and averaging of low laser power two-photon fluorescence images of mouse retina

    PubMed Central

    Alexander, Nathan S.; Palczewska, Grazyna; Stremplewski, Patrycjusz; Wojtkowski, Maciej; Kern, Timothy S.; Palczewski, Krzysztof

    2016-01-01

    Two-photon fluorescence microscopy (TPM) is now being used routinely to image live cells for extended periods deep within tissues, including the retina and other structures within the eye . However, very low laser power is a requirement to obtain TPM images of the retina safely. Unfortunately, a reduction in laser power also reduces the signal-to-noise ratio of collected images, making it difficult to visualize structural details. Here, image registration and averaging methods applied to TPM images of the eye in living animals (without the need for auxiliary hardware) demonstrate the structural information obtained with laser power down to 1 mW. Image registration provided between 1.4% and 13.0% improvement in image quality compared to averaging images without registrations when using a high-fluorescence template, and between 0.2% and 12.0% when employing the average of collected images as the template. Also, a diminishing return on image quality when more images were used to obtain the averaged image is shown. This work provides a foundation for obtaining informative TPM images with laser powers of 1 mW, compared to previous levels for imaging mice ranging between 6.3 mW [PalczewskaG., Nat Med. 20, 785 (2014)24952647 SharmaR., Biomed. Opt. Express 4, 1285 (2013)24009992]. PMID:27446697

  10. Bessel integrals in epsilon expansion: Squared spherical Bessel functions averaged with Gaussian power-law distributions

    NASA Astrophysics Data System (ADS)

    Tomaschitz, Roman

    2013-12-01

    Bessel integrals of type {int_0^infty {k^{μ+2}{e}^{-ak2-(b+{i} ω)k}j_l^{2} (pk)dk}} are studied, where the squared spherical Bessel function j {/l 2} is averaged with a modulated Gaussian power-law density. These integrals define the multipole moments of Gaussian random fields on the unit sphere, arising in multipole fits of temperature and polarization power spectra of the cosmic microwave background. The averages can be calculated in closed form as finite Hankel series, which allow high-precision evaluation. In the case of integer power-law exponents μ, singularities emerge in the series coefficients, which requires ɛ expansion. The pole extraction and regularization of singular Hankel series is performed, for integer Gaussian power-law densities as well as for the special case of Kummer averages (a = 0 in the exponential of the integrand). The singular ɛ residuals are used to derive combinatorial identities (sum rules) for the rational Hankel coefficients, which serve as consistency checks in precision calculations of the integrals. Numerical examples are given, and the Hankel evaluation of Gaussian and Kummer averages is compared with their high-index Airy approximation over a wide range of integer Bessel indices l.

  11. High average power of Q-switched Tm:YAG slab laser

    NASA Astrophysics Data System (ADS)

    Jin, Lin; Liu, Pian; Liu, Xuan; Huang, Haitao; Yao, Weichao; Shen, Deyuan

    2016-08-01

    A laser-diode end-pumped Tm:YAG single crystal slab laser in acousto-optic Q-switched operation was demonstrated. For Q-switched operation, the average output power of 20.7 W at 1 kHz was achieved under the absorbed pump power of 83.6 W, corresponding to the slope efficiency of 36.1%, the shortest pulse width of 84 ns and the maximum pulse energy of 20.7 mJ with peak power of 250 kW were obtained.

  12. Nature of the Thermoelectric Power in Bipolar Semiconductors

    NASA Astrophysics Data System (ADS)

    Titov, O. Yu; Bulat, L. P.; Gurevich, Yu. G.

    2016-08-01

    Thermoelectricity increasingly draws the attention of researchers because it can provide us with methods to generate environmentally clean energy and solid-state cooling. However, some problems in thermoelectricity's physics remain unsolved. In this paper, a new approach to thermoelectric phenomena is presented, one that uses a linear description of the nonequilibrium charge carrier transport. The role of nonequilibrium carriers of both surface and bulk recombination processes has been shown to be crucial even within the linear approximation. Electron and hole quasi-Fermi levels originated from the thermal field are explicitly obtained in the case of a thermoelectric current flowing through an external circuit; the necessary corresponding boundary conditions are obtained. For the first time, it is shown that the quasi-Fermi level of one of the carriers can be a nonmonotonous function of spatial coordinates. General expressions for the thermoelectric current, the thermo-electromotive force (thermo-emf), and the electrical resistance of bipolar semiconductors have been obtained. Also for the first time, the influence of both surface recombination and surface resistance in thermoelectric phenomena was taken into account.

  13. Recent advances in the development of high average power induction accelerators for industrial and environmental applications

    SciTech Connect

    Neau, E.L.

    1994-09-01

    Short-pulse accelerator technology developed during the early 1960`s through the late 1980`s is being extended to high average power systems capable of use in industrial and environmental applications. Processes requiring high dose levels and/or high volume throughput will require systems with beam power levels from several hundreds of kilowatts to megawatts. Beam accelerating potentials can range from less than 1 MeV to as much as 10 MeV depending on the type of beam, depth of penetration required, and the density of the product being treated. This paper addresses the present status of a family of high average power systems, with output beam power levels up to 200 kW, now in operation that use saturable core switches to achieve output pulse widths of 50 to 80 nanoseconds. Inductive adders and field emission cathodes are used to generate beams of electrons or x-rays at up to 2.5 MeV over areas of 1000 cm{sup 2}. Similar high average power technology is being used at {le} 1 MeV to drive repetitive ion beam sources for treatment of material surfaces over 100`s of cm{sup 2}.

  14. Non-chain pulsed DF laser with an average power of the order of 100 W

    NASA Astrophysics Data System (ADS)

    Pan, Qikun; Xie, Jijiang; Wang, Chunrui; Shao, Chunlei; Shao, Mingzhen; Chen, Fei; Guo, Jin

    2016-07-01

    The design and performance of a closed-cycle repetitively pulsed DF laser are described. The Fitch circuit and thyratron switch are introduced to realize self-sustained volume discharge in SF6-D2 mixtures. The influences of gas parameters and charging voltage on output characteristics of non-chain pulsed DF laser are experimentally investigated. In order to improve the laser power stability over a long period of working time, zeolites with different apertures are used to scrub out the de-excitation particles produced in electric discharge. An average output power of the order of 100 W was obtained at an operating repetition rate of 50 Hz, with amplitude difference in laser pulses <8 %. And under the action of micropore alkaline zeolites, the average power fell by 20 % after the laser continuing working 100 s at repetition frequency of 50 Hz.

  15. Distributed and coupled 2D electro-thermal model of power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Belkacem, Ghania; Lefebvre, Stéphane; Joubert, Pierre-Yves; Bouarroudj-Berkani, Mounira; Labrousse, Denis; Rostaing, Gilles

    2014-05-01

    The development of power electronics in the field of transportations (automotive, aeronautics) requires the use of power semiconductor devices providing protection and diagnostic functions. In the case of series protections power semiconductor devices which provide protection may operate in shortcircuit and act as a current limiting device. This mode of operations is very constraining due to the large dissipation of power. In these particular conditions of operation, electro-thermal models of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors based on the coupling between two computation softwares (Matlab and Cast3M) is described in this paper. The 2D electro-thermal model is able to predict (i) the temperature distribution on chip surface well as in the volume under short-circuit operations, (ii) the effect of the temperature on the distribution of the current flowing within the die and (iii) the effects of the ageing of the metallization layer on the current density and the temperature. In this paper, the electrical and thermal models are described as well as the implemented coupling scheme.

  16. Techniques for increasing output power from mode-locked semiconductor lasers

    SciTech Connect

    Mar, A.; Vawter, G.A.

    1996-02-01

    Mode-locked semiconductor lasers have drawn considerable attention as compact, reliable, and relatively inexpensive sources of short optical pulses. Advances in the design of such lasers have resulted in vast improvements in pulsewidth and noise performance, at a very wide range of repetition rates. An attractive application for these lasers would be to serve as alternatives for large benchtop laser systems such as dye lasers and solid-state lasers. However, mode-locked semiconductor lasers have not yet approached the performance of such systems in terms of output power. Different techniques for overcoming the problem of low output power from mode-locked semiconductor lasers will be discussed. Flared and arrayed lasers have been used successfully to increase the pulse saturation energy limit by increasing the gain cross section. Further improvements have been achieved by use of the MOPA configuration, which utilizes a flared semiconductor amplifier s amplify pulses to energies of 120 pJ and peak powers of nearly 30W.

  17. High-power semiconductor laser array packaged on microchannel cooler using gold-tin soldering technology

    NASA Astrophysics Data System (ADS)

    Wang, Jingwei; Kang, Lijun; Zhang, Pu; Nie, Zhiqiang; Li, Xiaoning; Xiong, Lingling; Liu, Xingsheng

    2012-03-01

    High power semiconductor laser arrays have found increased applications in many fields. In this work, a hard soldering microchannel cooler (HSMCC) technology was developed for packaging high power diode laser array. Numerical simulations of the thermal behavior characteristics of hard solder and indium solder MCC-packaged diode lasers were conducted and analyzed. Based on the simulated results, a series of high power HSMCC packaged diode laser arrays were fabricated and characterized. The test and statistical results indicated that under the same output power the HSMCC packaged laser bar has lower smile and high reliability in comparison with the conventional copper MCC packaged laser bar using indium soldering technology.

  18. A kilowatt average power laser for sub-picosecond materials processing

    SciTech Connect

    Stephen V. Benson; George R. Neil; C. Bohn; , G. Biallas; D. Douglas; F. Dylla; J. Fugitt; K. Jordan; G. Krafft; , L. Merminga; , J. Preble; , Michelle D. Shinn; T. Siggins; R. Walker; B. Yunn

    1999-11-01

    The performance of laser pulses in the sub-picosecond range for materials processing is substantially enhanced over similar fluences delivered in longer pulses. Recent advances in the development of solid state lasers have progressed significantly toward the higher average powers potentially useful for many applications. Nonetheless, prospects remain distant for multi-kilowatt sub-picosecond solid state systems such as would be required for industrial scale surface processing of metals and polymers. The authors present operational results from the world's first kilowatt scale ultra-fast materials processing laser. A Free Electron Laser (FEL) called the IR Demo is operational as a User Facility at Thomas Jefferson National Accelerator Facility in Newport News, Virginia, USA. In its initial operation at high average power it is capable of wavelengths in the 2 to 6 micron range and can produce {approximately}0.7 ps pulses in a continuous train at {approximately}75 MHz. This pulse length has been shown to be nearly optimal for deposition of energy in materials at the surface. Upgrades in the near future will extend operation beyond 10 kW CW average power in the near IR and kilowatt levels of power at wavelengths from 0.3 to 60 microns. This paper will cover the design and performance of this groundbreaking laser and operational aspects of the User Facility.

  19. High-average-power actively-mode-locked Tm3+ fiber lasers

    NASA Astrophysics Data System (ADS)

    Eckerle, Michael; Kieleck, Christelle; Hübner, Philipp; Świderski, Jacek; Jackson, Stuart D.; Mazé, Gwenael; Eichhorn, Marc

    2012-02-01

    Fiber lasers emitting in the 2 μm wavelength range doped with thulium ions can be used as highly efficient pump sources for nonlinear converters to generate mid-infrared radiation. For spectroscopic purposes, illumination and countermeasures, a broad mid-infrared emission spectrum is advantageous. This can be reached by supercontinuum generation in fibers, e.g. fluoride fibers, which up to now has, however, only been presented with either low average power, complex Raman-shifted 1.55 μm pump sources or multi-stage amplifier pump schemes. Here we present recent results of a new actively-mode-locked single-oscillator scheme that can provide the high-repetition rate sub-ns pump pulses needed for pumping supercontinuum generators. A thulium-doped silica fiber laser is presented that provides > 11 W of average power CW-mode-locked pulses at 38 MHz repetition rate at ~ 38 ps pulse width. Upgrading the setup to allow Q-switched mode-locked operation yields mode-locked 40 MHz pulses arranged in 60 kHz bunched Q-switch envelopes and thus increases further the available peak power. In this Q-switched mode-locked regime over 5 W of average power has been achieved.

  20. Composite Thin-Disk Laser Scaleable to 100 kW Average Power Output and Beyond

    SciTech Connect

    Zapata, L.; Beach, R.; Payne, S.

    2000-06-01

    By combining newly developed technologies to engineer composite laser components with state of the art diode laser pump delivery technologies, we are in a position to demonstrate high beam quality, continuous wave, laser radiation at scaleable high average powers. The crucial issues of our composite thin disk laser technology were demonstrated during a successful first light effort. The high continuous wave power levels that are now within reach make this system of high interest to future DoD initiatives in solid-state laser technology for the laser weapon arena.

  1. 28W average power hydrocarbon-free rubidium diode pumped alkali laser.

    PubMed

    Zweiback, Jason; Krupke, William F

    2010-01-18

    We present experimental results for a high-power diode pumped hydrocarbon-free rubidium laser with a scalable architecture. The laser consists of a liquid cooled, copper waveguide which serves to both guide the pump light and to provide a thermally conductive surface near the gain volume to remove heat. A laser diode stack, with a linewidth narrowed to approximately 0.35 nm with volume bragg gratings, is used to pump the cell. We have achieved 24W average power output using 4 atmospheres of naturally occurring helium ((4)He) as the buffer gas and 28W using 2.8 atmospheres of (3)He.

  2. High-average-power water window soft X-rays from an Ar laser plasma

    NASA Astrophysics Data System (ADS)

    Amano, Sho

    2016-07-01

    A high average power of 140 mW and high conversion efficiency of 14% were demonstrated in “water window” soft X-rays generated using a laser plasma source developed in-house, when a solid Ar target was irradiated by a commercial Nd:YAG Q-switched laser with an energy of 1 J at a repetition rate of 1 Hz. This soft X-ray power compared favorably with that produced using a synchrotron radiation source, and the developed laser plasma source can be used in various applications, such as soft X-ray microscopy, in place of synchrotron facilities.

  3. Large-aperture YCOB crystal growth for frequency conversion in the high average power laser system

    NASA Astrophysics Data System (ADS)

    Fei, Yiting; Chai, Bruce H. T.; Ebbers, C. A.; Liao, Z. M.; Schaffers, K. I.; Thelin, P.

    2006-04-01

    Yttrium calcium oxyborate YCa4O(BO3)3 (YCOB) is a novel non-linear optical crystal possessing good thermal, mechanical and non-linear optical properties. Large-aperture YCOB crystals with 75 mm diameter were grown for high-average power frequency conversion on the mercury laser system. The growth morphology (included facet and spiral growth), cracking and inclusions in the as-grown crystal boule were discussed as the critical problem for large-aperture YCOB crystal growth. This can be minimized through modification of the growth program, including pulling rate, separation procedure, and cooling program. High-average power frequency conversion of the mercury laser using YCOB has been demonstrated, and experimental validation of YCOB material yields 50% conversion at 10 Hz has been achieved.

  4. Energetic sub-2-cycle laser with 216  W average power.

    PubMed

    Hädrich, Steffen; Kienel, Marco; Müller, Michael; Klenke, Arno; Rothhardt, Jan; Klas, Robert; Gottschall, Thomas; Eidam, Tino; Drozdy, András; Jójárt, Péter; Várallyay, Zoltán; Cormier, Eric; Osvay, Károly; Tünnermann, Andreas; Limpert, Jens

    2016-09-15

    Few-cycle lasers are essential for many research areas such as attosecond physics that promise to address fundamental questions in science and technology. Therefore, further advancements are connected to significant progress in the underlying laser technology. Here, two-stage nonlinear compression of a 660 W femtosecond fiber laser system is utilized to achieve unprecedented average power levels of energetic ultrashort or even few-cycle laser pulses. In a first compression step, 408 W, 320 μJ, 30 fs pulses are achieved, which can be further compressed to 216 W, 170 μJ, 6.3 fs pulses in a second compression stage. To the best of our knowledge, this is the highest average power few-cycle laser system presented so far. It is expected to significantly advance the fields of high harmonic generation and attosecond science.

  5. Synchronously injected amplifiers, a novel approach to high-average-power FEL

    SciTech Connect

    Nguyen, D.C.; Fortgang, C.M.; Goldstein, J.C.; Kinross-Wright, J.M.; Sheffield, R.L.

    1996-11-01

    Two new FEL ideas based on synchronously injected amplifiers are described. Both of these rely on the synchronous injection of the optical signal into a high-gain, high-efficiency tapered wiggler. The first concept, called Regenerative Amplifier FEL (RAFEL), uses an optical feedback loop to provide a coherent signal at the wiggler entrance so that the optical power can reach saturation rapidly. The second idea requires the use of a uniform wiggler in the feedback loop to generate light that can be synchronously injected back into the first wiggler. The compact Advanced FEL is being modified to implement the RAFEL concept. We describe future operation of the Advanced FEL at high average current and discuss the possibility of generating 1 kW average power.

  6. Energetic sub-2-cycle laser with 216  W average power.

    PubMed

    Hädrich, Steffen; Kienel, Marco; Müller, Michael; Klenke, Arno; Rothhardt, Jan; Klas, Robert; Gottschall, Thomas; Eidam, Tino; Drozdy, András; Jójárt, Péter; Várallyay, Zoltán; Cormier, Eric; Osvay, Károly; Tünnermann, Andreas; Limpert, Jens

    2016-09-15

    Few-cycle lasers are essential for many research areas such as attosecond physics that promise to address fundamental questions in science and technology. Therefore, further advancements are connected to significant progress in the underlying laser technology. Here, two-stage nonlinear compression of a 660 W femtosecond fiber laser system is utilized to achieve unprecedented average power levels of energetic ultrashort or even few-cycle laser pulses. In a first compression step, 408 W, 320 μJ, 30 fs pulses are achieved, which can be further compressed to 216 W, 170 μJ, 6.3 fs pulses in a second compression stage. To the best of our knowledge, this is the highest average power few-cycle laser system presented so far. It is expected to significantly advance the fields of high harmonic generation and attosecond science. PMID:27628390

  7. Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics.

    PubMed

    Heo, Jinseong; Byun, Kyung-Eun; Lee, Jaeho; Chung, Hyun-Jong; Jeon, Sanghun; Park, Seongjun; Hwang, Sungwoo

    2013-01-01

    Graphene heterostructures in which graphene is combined with semiconductors or other layered 2D materials are of considerable interest, as a new class of electronic devices has been realized. Here we propose a technology platform based on graphene-thin-film-semiconductor-metal (GSM) junctions, which can be applied to large-scale and power-efficient electronics compatible with a variety of substrates. We demonstrate wafer-scale integration of vertical field-effect transistors (VFETs) based on graphene-In-Ga-Zn-O (IGZO)-metal asymmetric junctions on a transparent 150 × 150 mm(2) glass. In this system, a triangular energy barrier between the graphene and metal is designed by selecting a metal with a proper work function. We obtain a maximum current on/off ratio (Ion/Ioff) up to 10(6) with an average of 3010 over 2000 devices under ambient conditions. For low-power logic applications, an inverter that combines complementary n-type (IGZO) and p-type (Ge) devices is demonstrated to operate at a bias of only 0.5 V.

  8. High-average-power narrow-line-width sum frequency generation 589 nm laser

    NASA Astrophysics Data System (ADS)

    Lu, Yanhua; Fan, Guobin; Ren, Huaijin; Zhang, Lei; Xu, Xiafei; Zhang, Wei; Wan, Min

    2015-10-01

    An 81 W average-power all-solid-state sodium beacon laser at 589 nm with a repetition rate of 250 Hz is introduced, which is based on a novel sum frequency generation idea between two high-energy, different line widths, different beam quality infrared lasers (a 1064 nm laser and a 1319 nm laser). The 1064 nm laser, which features an external modulated CW single frequency seed source and two stages of amplifiers, can provide average-power of 150 W, beam quality M2 of ~1.8 with ultra-narrow line width (< 100 kHz). The 1319 nm laser can deliver average-power of 100 W, beam quality M2 of ~3.0 with a narrow line width of ~0.3 GHz. By sum frequency mixing in a LBO slab crystal (3 mm x 12 mm x 50 mm), pulse energy of 325 mJ is achieved at 589 nm with a conversion efficiency of 32.5 %. Tuning the center wavelength of 1064 nm laser by a PZT PID controller, the target beam's central wavelength is accurately locked to 589.15910 nm with a line width of ~0.3 GHz, which is dominated mainly by the 1319 nm laser. The beam quality is measured to be M2 < 1.3. The pulse duration is measured to be 150 μs in full-width. To the best of our knowledge, this represents the highest average-power for all-solid-state sodium beacon laser ever reported.

  9. Temperature-insensitive frequency tripling for generating high-average power UV lasers.

    PubMed

    Zhong, Haizhe; Yuan, Peng; Wen, Shuangchun; Qian, Liejia

    2014-02-24

    Aimed for generating high-average power ultraviolet (UV) lasers via third-harmonic generation (THG) consisting of frequency doubling and tripling stages, we numerically and experimentally demonstrate a novel frequency tripling scheme capable of supporting temperature-insensitive phase-matching (PM). Two cascaded tripling crystals, with opposite signs of the temperature derivation of phase-mismatch, are proposed and theoretically studied for improving the temperature-acceptance of PM. The proof-of-principle tripling experiment using two crystals of LBO and BBO shows that the temperature acceptance can be ~1.5 times larger than that of using a single tripling crystal. In addition, the phase shift caused by air dispersion, along with its influence on the temperature-insensitive PM, are also discussed. To illustrate the potential applications of proposed two-crystal tripling design in the high-average-power regime, full numerical simulations for the tripling process, are implemented based on the realistic crystals. The demonstrated two-crystal tripling scheme may provide a promising route to high-average-power THG in the UV region.

  10. Hybrid metal-semiconductor mirror for high power VECSEL

    NASA Astrophysics Data System (ADS)

    Laurain, Alexandre; Gbele, Kokou; Hader, Jorg; Stolz, Wolfgang; Koch, Stephan; Ruiz Perez, Antje; Moloney, Jerome V.

    2016-03-01

    We demonstrate a low thermal impedance hybrid mirror VECSEL. We used only 14 pairs of AlGaAs/AlAs, transparent at the pump wavelength, and we used a patterned mask to deposit pure gold on areas of the chip to be pumped, and Ti/Au on other area to circumvent the poor adhesion of gold on GaAs. A higher gain is observed on an area metallized with pure gold and an output power of 4W was obtained, showing the effectiveness of the metallic mirror and validating the bonding quality. Chip processing and laser characteristics are studied in detail and compared to simulations.

  11. Narrow-linewidth master-oscillator power amplifier based on a semiconductor tapered amplifier.

    PubMed

    Wilson, A C; Sharpe, J C; McKenzie, C R; Manson, P J; Warrington, D M

    1998-07-20

    The output of a grating-stabilized external-cavity diode laser was injected into a semiconductor tapered amplifier in a master-oscillator power amplifier configuration, producing as much as 500 mW of power with narrow linewidth. The additional linewidth that is due to the tapered amplifier is much smaller than the typical linewidth of grating-stabilized laser diodes. To demonstrate the usefulness of the narrow linewidth and high output power, we used the system to perform Doppler-free two-photon spectroscopy with rubidium. PMID:18285950

  12. Semiconductor converters/inverters for photovoltaic power supply

    NASA Astrophysics Data System (ADS)

    Longrigg, P.

    The two generic types of DC to AC inverters are discussed, considering inherent problems and prospects for solution. A current source converter uses reference current from the AC utility line to chop the DC into AC using four thyristors as switches. Difficulties exist in that DC current contains lagging quadrature currents and are harmonics rich. Solutions are indicated in the form of tuned filters for controlling harmonics and a static VAR generator for the quadrature demand, except that solving the quadrature problem reintroduces further harmonics. In the voltage-sourced converter, which performs much like a synchronous generator, harmonics are also present and can be eliminated with pulse-width modulation. However, at lower powers, switching accelerates beyond attainable switching speed levels. Finally, a current-fed, force commutated converter is described which commutates ahead of the AC voltage; it may need special filters or buffers in addition to harmonics filters. Further studies are recommended in areas of cost reductions, interface overvoltage protection, harmonics, source stability, safety and code requirements, and utility system protection, all pertinent to photovoltaic power conditioning. Circuitry diagrams and AC V-I graphs are provided.

  13. High-index asymptotics of spherical Bessel products averaged with modulated Gaussian power laws

    NASA Astrophysics Data System (ADS)

    Tomaschitz, Roman

    2014-12-01

    Bessel integrals of type are investigated, where the kernel g( k) is a modulated Gaussian power-law distribution , and the jl ( m) are multiple derivatives of spherical Bessel functions. These integrals define the multipole moments of Gaussian random fields on the unit sphere, arising in multipole fits of temperature and polarization power spectra of the cosmic microwave background. Two methods allowing efficient numerical calculation of these integrals are presented, covering Bessel indices l in the currently accessible multipole range 0 ≤ l ≤ 104 and beyond. The first method is based on a representation of spherical Bessel functions by Lommel polynomials. Gaussian power-law averages can then be calculated in closed form as finite Hankel series of parabolic cylinder functions, which allow high-precision evaluation. The second method is asymptotic, covering the high- l regime, and is applicable to general distribution functions g( k) in the integrand; it is based on the uniform Nicholson approximation of the Bessel derivatives in conjunction with an integral representation of squared Airy functions. A numerical comparison of these two methods is performed, employing Gaussian power laws and Kummer distributions to average the Bessel products.

  14. Simulation of spectral stabilization of high-power broad-area edge emitting semiconductor lasers.

    PubMed

    Holly, Carlo; Hengesbach, Stefan; Traub, Martin; Hoffmann, Dieter

    2013-07-01

    The simulation of spectral stabilization of broad-area edge-emitting semiconductor diode lasers is presented in this paper. In the reported model light-, temperature- and charge carrier-distributions are solved iteratively in frequency domain for transverse slices along the semiconductor heterostructure using wide-angle finite-difference beam propagation. Depending on the operating current the laser characteristics are evaluated numerically, including near- and far-field patterns of the astigmatic laser beam, optical output power and the emission spectra, with central wavelength and spectral width. The focus of the model lies on the prediction of influences on the spectrum and power characteristics by frequency selective feedback from external optical resonators. Results for the free running and the spectrally stabilized diode are presented.

  15. A technique for optimizing the design of power semiconductor devices

    NASA Technical Reports Server (NTRS)

    Schlegel, E. S.

    1976-01-01

    A technique is described that provides a basis for predicting whether any device design change will improve or degrade the unavoidable trade-off that must be made between the conduction loss and the turn-off speed of fast-switching high-power thyristors. The technique makes use of a previously reported method by which, for a given design, this trade-off was determined for a wide range of carrier lifetimes. It is shown that by extending this technique, one can predict how other design variables affect this trade-off. The results show that for relatively slow devices the design can be changed to decrease the current gains to improve the turn-off time without significantly degrading the losses. On the other hand, for devices having fast turn-off times design changes can be made to increase the current gain to decrease the losses without a proportionate increase in the turn-off time. Physical explanations for these results are proposed.

  16. Generation of 1.5 W average power, 18 kHz repetition rate coherent mid-ultraviolet radiation at 271.2 nm.

    PubMed

    Biswal, Ramakanta; Agrawal, Praveen K; Dixit, Sudhir K; Nakhe, Shankar V

    2015-11-10

    This paper presents to our knowledge a first time study on the generation of 1.5 W average power, 18 kHz repetition rate coherent mid-ultraviolet (UV) radiation at 271.2 nm. The work is based on frequency summing of coherent green (G: 510.6 nm) and yellow (Y: 578.2 nm) radiations of a copper-HBr laser in a β-barium borate crystal. Average and peak sum frequency conversion efficiencies of about 13% and 16%, respectively, are obtained. The sum frequency results are experimentally analyzed in terms of the extent of matching of green and yellow pump radiations in space, time, and frequency domains. The result is of high significance for many applications in photonics components fabrication, semiconductor technology, and spectroscopy. PMID:26560794

  17. Accelerated Aging System for Prognostics of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Celaya, Jose R.; Vashchenko, Vladislav; Wysocki, Philip; Saha, Sankalita

    2010-01-01

    Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

  18. High-throughput machining using high average power ultrashort pulse lasers and ultrafast polygon scanner

    NASA Astrophysics Data System (ADS)

    Schille, Joerg; Schneider, Lutz; Streek, André; Kloetzer, Sascha; Loeschner, Udo

    2016-03-01

    In this paper, high-throughput ultrashort pulse laser machining is investigated on various industrial grade metals (Aluminium, Copper, Stainless steel) and Al2O3 ceramic at unprecedented processing speeds. This is achieved by using a high pulse repetition frequency picosecond laser with maximum average output power of 270 W in conjunction with a unique, in-house developed two-axis polygon scanner. Initially, different concepts of polygon scanners are engineered and tested to find out the optimal architecture for ultrafast and precision laser beam scanning. Remarkable 1,000 m/s scan speed is achieved on the substrate, and thanks to the resulting low pulse overlap, thermal accumulation and plasma absorption effects are avoided at up to 20 MHz pulse repetition frequencies. In order to identify optimum processing conditions for efficient high-average power laser machining, the depths of cavities produced under varied parameter settings are analyzed and, from the results obtained, the characteristic removal values are specified. The maximum removal rate is achieved as high as 27.8 mm3/min for Aluminium, 21.4 mm3/min for Copper, 15.3 mm3/min for Stainless steel and 129.1 mm3/min for Al2O3 when full available laser power is irradiated at optimum pulse repetition frequency.

  19. Application of Bayesian model averaging to measurements of the primordial power spectrum

    SciTech Connect

    Parkinson, David; Liddle, Andrew R.

    2010-11-15

    Cosmological parameter uncertainties are often stated assuming a particular model, neglecting the model uncertainty, even when Bayesian model selection is unable to identify a conclusive best model. Bayesian model averaging is a method for assessing parameter uncertainties in situations where there is also uncertainty in the underlying model. We apply model averaging to the estimation of the parameters associated with the primordial power spectra of curvature and tensor perturbations. We use CosmoNest and MultiNest to compute the model evidences and posteriors, using cosmic microwave data from WMAP, ACBAR, BOOMERanG, and CBI, plus large-scale structure data from the SDSS DR7. We find that the model-averaged 95% credible interval for the spectral index using all of the data is 0.940averaging can tighten the credible upper limit, depending on prior assumptions.

  20. The influence of seat configuration on maximal average crank power during pedaling: a simulation study.

    PubMed

    Rankin, Jeffery W; Neptune, Richard R

    2010-11-01

    Manipulating seat configuration (i.e., seat tube angle, seat height and pelvic orientation) alters the bicycle-rider geometry, which influences lower extremity muscle kinematics and ultimately muscle force and power generation during pedaling. Previous studies have sought to identify the optimal configuration, but isolating the effects of specific variables on rider performance from the confounding effect of rider adaptation makes such studies challenging. Of particular interest is the influence of seat tube angle on rider performance, as seat tube angle varies across riding disciplines (e.g., road racers vs. triathletes). The goals of the current study were to use muscle-actuated forward dynamics simulations of pedaling to 1) identify the overall optimal seat configuration that produces maximum crank power and 2) systematically vary seat tube angle to assess how it influences maximum crank power. The simulations showed that a seat height of 0.76 m (or 102% greater than trochanter height), seat tube angle of 85.1 deg, and pelvic orientation of 20.5 deg placed the major power-producing muscles on more favorable regions of the intrinsic force-length-velocity relationships to generate a maximum average crank power of 981 W. However, seat tube angle had little influence on crank power, with maximal values varying at most by 1% across a wide range of seat tube angles (65 to 110 deg). The similar power values across the wide range of seat tube angles were the result of nearly identical joint kinematics, which occurred using a similar optimal seat height and pelvic orientation while systematically shifting the pedal angle with increasing seat tube angles.

  1. High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm.

    PubMed

    Härkönen, Antti; Rautiainen, Jussi; Guina, Mircea; Konttinen, Janne; Tuomisto, Pietari; Orsila, Lasse; Pessa, Markus; Okhotnikov, Oleg G

    2007-03-19

    We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity.

  2. Yttrium Calcium Oxyborate for high average power frequency doubling and OPCPA

    SciTech Connect

    Liao, Z M; Jovanovic, I; Ebbers, C A; Bayramian, A; Schaffers, K; Caird, J; Bibeau, C; Barty, C J; Fei, Y; Chai, B

    2006-06-20

    Significant progress has been achieved recently in the growth of Yttrium Calcium Oxyborate (YCOB) crystals. Boules have been grown capable of producing large aperture nonlinear crystal plates suitable for high average power frequency conversion or optical parametric chirped pulse amplification (OPCPA). With a large aperture (5.5 cm x 8.5 cm) YCOB crystal we have demonstrated a record 227 W of 523.5nm light (22.7 J/pulse, 10 Hz, 14 ns). We have also demonstrated the applicability of YCOB for 1053 nm OPCPA.

  3. Cryogenic Yb:YAG composite-thin-disk for high energy and average power amplifiers.

    PubMed

    Zapata, Luis E; Lin, Hua; Calendron, Anne-Laure; Cankaya, Huseyin; Hemmer, Michael; Reichert, Fabian; Huang, W Ronny; Granados, Eduardo; Hong, Kyung-Han; Kärtner, Franz X

    2015-06-01

    A cryogenic composite-thin-disk amplifier with amplified spontaneous emission (ASE) rejection is implemented that overcomes traditional laser system problems in high-energy pulsed laser drivers of high average power. A small signal gain of 8 dB was compared to a 1.5 dB gain for an uncapped thin-disk without ASE mitigation under identical pumping conditions. A strict image relayed 12-pass architecture using an off-axis vacuum telescope and polarization switching extracted 100 mJ at 250 Hz in high beam quality stretched 700 ps pulses of 0.6-nm bandwidth. PMID:26030570

  4. New generation of high average power industry grade ultrafast ytterbium fiber lasers

    NASA Astrophysics Data System (ADS)

    Yusim, Alex; Samartsev, Igor; Shkurikhin, Oleg; Myasnikov, Daniil; Bordenyuk, Andrey; Platonov, Nikolai; Kancharla, Vijay; Gapontsev, Valentin

    2016-03-01

    We report an industrial grade picosecond and femtosecond pulse Yb fiber lasers with >100 μJ pulse energy and hundreds of Watts of average power for improved laser machining speed of sapphire and glass. This highly efficient laser offers >25% wall plug efficiency within a compact 3U rack-mountable configuration plus a long >2m fiber delivery cable. Reconfigurable features such as controllable repetition rate, fine pulse duration control, burst mode operation and adjustable pulse energy permit the customer to tailor the laser to their application.

  5. Dual-scale turbulence in filamenting laser beams at high average power

    NASA Astrophysics Data System (ADS)

    Schubert, Elise; de la Cruz, Lorena; Mongin, Denis; Klingebiel, Sandro; Schultze, Marcel; Metzger, Thomas; Michel, Knut; Kasparian, Jérôme; Wolf, Jean-Pierre

    2016-10-01

    We investigate the self-induced turbulence of high-repetition-rate laser filaments over a wide range of average powers (1 mW to 100 W) and its sensitivity to external atmospheric turbulence. Although both externally imposed and self-generated types of turbulence can have comparable magnitudes, they act on different temporal and spatial scales. While the former drives the shot-to-shot motion at the millisecond time scale, the latter acts on the 0.5-s scale. As a consequence, their effects are decoupled, preventing beam stabilization by the thermally induced low-density channel produced by the laser filaments.

  6. Method and system for modulation of gain suppression in high average power laser systems

    DOEpatents

    Bayramian, Andrew James

    2012-07-31

    A high average power laser system with modulated gain suppression includes an input aperture associated with a first laser beam extraction path and an output aperture associated with the first laser beam extraction path. The system also includes a pinhole creation laser having an optical output directed along a pinhole creation path and an absorbing material positioned along both the first laser beam extraction path and the pinhole creation path. The system further includes a mechanism operable to translate the absorbing material in a direction crossing the first laser beam extraction laser path and a controller operable to modulate the second laser beam.

  7. High Average Power Laser Gain Medium With Low Optical Distortion Using A Transverse Flowing Liquid Host

    DOEpatents

    Comaskey, Brian J.; Ault, Earl R.; Kuklo, Thomas C.

    2005-07-05

    A high average power, low optical distortion laser gain media is based on a flowing liquid media. A diode laser pumping device with tailored irradiance excites the laser active atom, ion or molecule within the liquid media. A laser active component of the liquid media exhibits energy storage times longer than or comparable to the thermal optical response time of the liquid. A circulation system that provides a closed loop for mixing and circulating the lasing liquid into and out of the optical cavity includes a pump, a diffuser, and a heat exchanger. A liquid flow gain cell includes flow straighteners and flow channel compression.

  8. A High-Average-Power Free Electron Laser for Microfabrication and Surface Applications

    NASA Technical Reports Server (NTRS)

    Dylla, H. F.; Benson, S.; Bisognano, J.; Bohn, C. L.; Cardman, L.; Engwall, D.; Fugitt, J.; Jordan, K.; Kehne, D.; Li, Z.; Liu, H.; Merminga, L.; Neil, G. R.; Neuffer, D.; Shinn, M.; Sinclair, C.; Wiseman, M.; Brillson, L. J.; Henkel, D. P.; Helvajian, H.; Kelley, M. J.; Nair, Shanti

    1995-01-01

    CEBAF has developed a comprehensive conceptual design of an industrial user facility based on a kilowatt ultraviolet (UV) (160-1000 mm) and infrared (IR) (2-25 micron) free electron laser (FEL) driven by a recirculating, energy recovering 200 MeV superconducting radio frequency (SRF) accelerator. FEL users, CEBAF's partners in the Lase Processing Consortium, including AT&T, DuPont, IBM, Northrop Grumman, 3M, and Xerox, are developing applications such as metal, ceramic, and electronic material micro-fabrication and polymer and metal surface processing, with the overall effort leading to later scale-up to industrial systems at 50-100 kW. Representative applications are described. The proposed high-average-power FEL overcomes limitations of conventional laser sources in available power, cost-effectiveness, tunability, and pulse structure.

  9. Phase transition cooled window studies for high average power electron guns

    NASA Astrophysics Data System (ADS)

    Loda, G.; Forcier, D.

    1980-12-01

    The window used to transmit electron beams for use in high average power UV/visible lasers has been a critical technology issue. The window structure must satisfy a number of conflicting requirements including: vacuum integrity, strength to overcome both the static and dynamic pressure loads of the laser gas and a low mass density to minimize energy loss by the electron beam. In addition, it must not perturb the laser gas flow and must be able to dissipate the power deposited by the electron beam. Two experiments were undertaken to demonstrate the applicability of phase transition cooling for high power laser systems. In the first of these a full width 50 cm module was tested with a constant input heat source. The second experiment used a pulsed e-beam source to demonstrate cooling for a low duty cycle high peak power pulsed system. The applicability of phase transition cooling for a dual foil geometry was clearly demonstrated. Cooling rates in excess of 100 W/(sq cm)/foil surface with mass flow rates consistent with low areal mass density were achieved. This represents a factor of ten improvement over pre-existing state of the art.

  10. Analysis of thermal conditions of high-power semiconductor lasers and their arrays

    SciTech Connect

    Mikaelyan, G T

    2006-03-31

    The results of thermophysical investigations of semiconductor lasers are reported, which underlie the formulation of the optimal requirements on the materials, design parameters, and technological assembling conditions for high-power semiconductor lasers and their one- and two-dimensional arrays with the goal of most efficient heat removal. The methods are outlined for calculating the residual post-assembling mechanical stress and determining the assemblage conditions under which the attendant stress is insignificant and its effect on the laser quality is minimal. Also the methods are given for calculating the thermal resistance for different heat sinks, including heat sinks with forced cooling, and of determining the design requirements on the heat sink arising from specific service conditions. (lasers)

  11. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1991-01-01

    The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  12. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    SciTech Connect

    Schwarze, G.E.; Frasca, A.J.

    1994-09-01

    The effects of neutrons and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10{sup 13} n/cm {sup 2} and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are given in this paper. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  13. Thermally induced distortion of a high-average-power laser system by an optical transport system

    NASA Astrophysics Data System (ADS)

    Chow, Robert; Ault, Linda E.; Taylor, John R.; Jedlovec, Don

    1999-11-01

    The atomic vapor laser isotope separation process uses high- average power lasers that have the commercial potential to enrich uranium for the electric power utilities. The transport of the laser beam through the laser system to the separation chambers requires high performance optical components, most of which have either fused silica or Zerodur as the substrate material. One of the requirements of the optical components is to preserve the wavefront quality of the laser beam that propagate over long distances. Full aperture tests with the high power process lasers and finite element analysis (FEA) have been performed on the transport optics. The wavefront distortions of the various sections of the transport path were measured with diagnostic Hartmann sensor packages. The FEA results were derived from an in-house thermal-structural- optical code which is linked to the commercially available CodeV program. In comparing the measured and predicted results, the bulk absorptance of fused silica was estimated to about 50 ppm/cm in the visible wavelength regime. Wavefront distortions will be reported on optics made from fused silica and Zerodur substrate materials.

  14. 1KHz high average power single-frequency Nd:YAG laser

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaolei; Ma, Xiuhua; Li, Shiguang; Chen, Weibiao

    2015-02-01

    A laser-diode-pumped master oscillator and power amplifier was developed with high efficiency, high average power and high beam quality. The oscillator is an injection-seeding, fiber coupled diode-end-pumped E-O Q-switched Nd:YAG laser, producing single frequency pulse laser output with pulse energy of 8mJ and pulse width of 11ns at a pulse repetition rate of 1KHz,The 1KHz was divided into four chains with frequency of 250Hz, through E-O modulation technology, The power amplifier utilizes conductively-cooling Nd:YAG zigzag slab with two sides' pump architecture at bounce point. Pulse energy of more than 800mJ with pulse widths of 12.6ns was obtained at repetition rate of 250Hz in every amplifier chain, the frequency-doubled pulse energy of 360mJ when KTP crystal was used was obtained at a repetition of 250Hz.

  15. Design and component specifications for high average power laser optical systems

    SciTech Connect

    O'Neil, R.W.; Sawicki, R.H.; Johnson, S.A.; Sweatt, W.C.

    1987-01-01

    Laser imaging and transport systems are considered in the regime where laser-induced damage and/or thermal distortion have significant design implications. System design and component specifications are discussed and quantified in terms of the net system transport efficiency and phase budget. Optical substrate materials, figure, surface roughness, coatings, and sizing are considered in the context of visible and near-ir optical systems that have been developed at Lawrence Livermore National Laboratory for laser isotope separation applications. In specific examples of general applicability, details of the bulk and/or surface absorption, peak and/or average power damage threshold, coating characteristics and function, substrate properties, or environmental factors will be shown to drive the component size, placement, and shape in high-power systems. To avoid overstressing commercial fabrication capabilities or component design specifications, procedures will be discussed for compensating for aberration buildup, using a few carefully placed adjustable mirrors. By coupling an aggressive measurements program on substrates and coatings to the design effort, an effective technique has been established to project high-power system performance realistically and, in the process, drive technology developments to improve performance or lower cost in large-scale laser optical systems. 13 refs.

  16. The Mercury Project: A High Average Power, Gas-Cooled Laser For Inertial Fusion Energy Development

    SciTech Connect

    Bayramian, A; Armstrong, P; Ault, E; Beach, R; Bibeau, C; Caird, J; Campbell, R; Chai, B; Dawson, J; Ebbers, C; Erlandson, A; Fei, Y; Freitas, B; Kent, R; Liao, Z; Ladran, T; Menapace, J; Molander, B; Payne, S; Peterson, N; Randles, M; Schaffers, K; Sutton, S; Tassano, J; Telford, S; Utterback, E

    2006-11-03

    Hundred-joule, kilowatt-class lasers based on diode-pumped solid-state technologies, are being developed worldwide for laser-plasma interactions and as prototypes for fusion energy drivers. The goal of the Mercury Laser Project is to develop key technologies within an architectural framework that demonstrates basic building blocks for scaling to larger multi-kilojoule systems for inertial fusion energy (IFE) applications. Mercury has requirements that include: scalability to IFE beamlines, 10 Hz repetition rate, high efficiency, and 10{sup 9} shot reliability. The Mercury laser has operated continuously for several hours at 55 J and 10 Hz with fourteen 4 x 6 cm{sup 2} ytterbium doped strontium fluoroapatite (Yb:S-FAP) amplifier slabs pumped by eight 100 kW diode arrays. The 1047 nm fundamental wavelength was converted to 523 nm at 160 W average power with 73% conversion efficiency using yttrium calcium oxy-borate (YCOB).

  17. High average power CW FELs (Free Electron Laser) for application to plasma heating: Designs and experiments

    SciTech Connect

    Booske, J.H.; Granatstein, V.L.; Radack, D.J.; Antonsen, T.M. Jr.; Bidwell, S.; Carmel, Y.; Destler, W.W.; Latham, P.E.; Levush, B.; Mayergoyz, I.D.; Zhang, Z.X. . Lab. for Plasma Research); Freund, H.P. )

    1989-01-01

    A short period wiggler (period {approximately} 1 cm), sheet beam FEL has been proposed as a low-cost source of high average power (1 MW) millimeter-wave radiation for plasma heating and space-based radar applications. Recent calculation and experiments have confirmed the feasibility of this concept in such critical areas as rf wall heating, intercepted beam ( body'') current, and high voltage (0.5 - 1 MV) sheet beam generation and propagation. Results of preliminary low-gain sheet beam FEL oscillator experiments using a field emission diode and pulse line accelerator have verified that lasing occurs at the predicted FEL frequency. Measured start oscillation currents also appear consistent with theoretical estimates. Finally, we consider the possibilities of using a short-period, superconducting planar wiggler for improved beam confinement, as well as access to the high gain, strong pump Compton regime with its potential for highly efficient FEL operation.

  18. Theoretical and experimental analysis of high-power frequency-stabilized semiconductor master oscillator power-amplifier system.

    PubMed

    Ji, Encai; Liu, Qiang; Nie, Mingming; Fu, Xing; Gong, Mali

    2016-04-10

    We present a compact high-power 780 nm frequency-stabilized diode laser with a power of as high as 2.825 W, corresponding to an estimated overall efficiency of 38.5%. The tapered amplifier (TPA) gain was about 24.5 dB, which was basically consistent with the simulation results. The beam quality factor was M2<1.72. The core feature of the system was stabilizing the frequency of the narrowband semiconductor TPA system with the matured saturated absorption spectrum technique. The laser frequency was stabilized against mode hops for a period of >4200  s with a frequency fluctuation around 6.7×10-10 within 1 s of the observation period, and the linewidth was no more than 0.95 MHz. The laser performance indicates that the current frequency-stabilized semiconductor laser has great potential in certain conditions that require several watts of output power. PMID:27139853

  19. Observation of power gain in an inductive pulsed power system with an optically activated semiconductor closing and opening switch

    NASA Astrophysics Data System (ADS)

    Kung, Chun C.; Funk, Eric E.; Chauchard, Eve A.; Rhee, M. J.; Lee, Chi H.; Yan, Li

    1991-03-01

    Peak power gain greater than 15 was obtained with a current charged transmission line and an optically activated semiconductor opening switch. The optical pulse used for activating the switch is generated by a Nd:glass laser emitting at 1. 054 pm. It has a slow rise-time (''--''2OO uS) and a fast fall-time (s1O uS). In the experiment a 2 kV output voltage pulse was achieved with a 5 mm cube GaAs p-i-n diode sitch at 500 V charging voltage.

  20. Procedure for pressure contact on high-power semiconductor devices free of thermal fatigue

    NASA Technical Reports Server (NTRS)

    Knobloch, J.

    1979-01-01

    To eliminate thermal fatigue, a procedure for manufacturing semiconductor power devices with pure pressure contact without solid binding was developed. Pressure contact without the use of a solid binding to avoid a limitation of the maximum surface in the contact was examined. A silicon wafer covered with a relatively thick metal layer is imbedded with the aid of a soft silver foil between two identically sized hard contact discs (molybdenum or tungsten) which are rotationally symmetrical. The advantages of this concept are shown for large diameters. The pressure contact was tested successfully in many devices in a large variety of applications.

  1. Wavefront control in high average-power multi-slab laser system

    NASA Astrophysics Data System (ADS)

    Pilar, Jan; Bonora, Stefano; Divoky, Martin; Phillips, Jonathan; Smith, Jodie; Ertel, Klaus; Collier, John; Jelinkova, Helena; Lucianetti, Antonio; Mocek, TomáÅ.¡

    2015-03-01

    A high average power cryogenically-cooled diode-pumped solid-state laser system for Hilase centre in Czech Republic is being developed by Central Laser Facility at Rutherford Appleton Laboratory, England in collaboration with Hilase team. The system will deliver pulses with energy of 100 J at 10 Hz repetition rate and will find applications in research and industry. The laser medium and other elements of the system are subject to heavy thermal loading which causes serious optical aberrations and degrade the output beam quality. To meet the stringent laser requirements of this kWclass laser, it is necessary to implement adaptive optics system, which will correct for these aberrations. During our research the sources of aberrations have been identified and analyzed. Based on this analysis, a suitable adaptive optics system was proposed. After finalizing numerical models, simulations and optimizations, the adaptive optics system was developed, characterized and installed in a cryogenically-cooled multi-slab laser system running up to 6 J and 10 Hz. The adaptive optics system consists of 6x6 actuator bimorph deformable mirror and wavefront sensor based on quadriwave lateral shearing interferometry operated in closed loop. The functionality of the system was demonstrated at full power.

  2. Novel cavities and functionality in high-power highbrightness semiconductor vertical external cavity surface emitting lasers

    NASA Astrophysics Data System (ADS)

    Hessenius, Chris

    Ever since the first laser demonstration in 1960, applications for laser systems have increased to include diverse fields such as: national defense, biology and medicine, entertainment, imaging, and communications. In order to serve the growing demand, a wide range of laser types including solid-state, semiconductor, gas, and dye lasers have been developed. For most applications it is critical to have lasers with both high optical power and excellent beam quality. This has traditionally been difficult to simultaneously achieve in semiconductor lasers. In the mid 1990's, the advent of an optically pumped semiconductor vertical-external-cavity surface-emitting laser (VECSEL) led to the demonstration of high (multi-watt) output power with near diffraction limited (TEM00) beam quality. Since that time VECSELs covering large wavelength regions have been developed. It is the objective of this dissertation to investigate and explore novel cavity designs which can lead to increased functionality in high power, high brightness VECSELs. Optically pumped VECSELs have previously demonstrated their potential for high power, high brightness operation. In addition, the "open" cavity design of this type of laser makes intracavity nonlinear frequency conversion, linewidth narrowing, and spectral tuning very efficient. By altering the external cavity design it is possible to add additional functionality to this already flexible design. In this dissertation, the history, theory, design, and fabrication are first presented as VECSEL performance relies heavily on the design and fabrication of the chip. Basic cavities such as the linear cavity and v-shaped cavity will be discussed, including the role they play in wavelength tuning, transverse mode profile, and mode stability. The development of a VECSEL for use as a sodium guide star laser is presented including the theory and simulation of intracavity frequency generation in a modified v-cavity. The results show agreement with theory

  3. High-power optically pumped semiconductor lasers for near infrared wavelengths

    NASA Astrophysics Data System (ADS)

    Wang, Tsuei-Lian

    Optically pumped semiconductor lasers (OPSLs) combine features including an engineerable emission wavelength, good beam quality, and scalable output power and are desirable for a wide variety of applications. Power scaling of OPSLs requires a combination of accurate epitaxial quantum design, accurate wafer growth and good thermal management. Here a fabrication process for OPSL devices was developed to ensure efficient OPSL device cooling and minimum surface scattering. A systematic thermal analysis was performed to optimize thermal management. Strategies for optimizing power extraction were developed; including increasing the gain/micro-cavity detuning that increases the threshold but also increases the slope efficiency and the roll-over temperature, recycling the excess pump via reflection from a metalized reflector at the back of a transparent DBR, anti-reflection coating at the pump wavelength while preserving the signal micro-cavity resonance. With optimized thermal management and the strategy of using large gain/micro-cavity detuning structure, a CW output power of 103 W from a single OPSL device was achieved. 42% optical-to-optical efficiency from the net pump power was obtained from the OPSL device with the double pass pump design and 39% optical-to-optical efficiency with respect to the total pump power was obtained with the new pump anti-reflection coating. For the fundamental mode operation, over 27 W of CW output power was achieved. To our knowledge, this is the highest 1 microm TEM00 mode power reported to date for an OPSL. Finally, strategies for generating high peak power are also discussed. A maximum peak power of over 270 W was achieved using 750 ns pump pulses.

  4. Increasing average power in medical ultrasonic endoscope imaging system by coded excitation

    NASA Astrophysics Data System (ADS)

    Chen, Xiaodong; Zhou, Hao; Wen, Shijie; Yu, Daoyin

    2008-12-01

    Medical ultrasonic endoscope is the combination of electronic endoscope and ultrasonic sensor technology. Ultrasonic endoscope sends the ultrasonic probe into coelom through biopsy channel of electronic endoscope and rotates it by a micro pre-motor, which requires that the length of ultrasonic probe is no more than 14mm and the diameter is no more than 2.2mm. As a result, the ultrasonic excitation power is very low and it is difficult to obtain a sharp image. In order to increase the energy and SNR of ultrasonic signal, we introduce coded excitation into the ultrasonic imaging system, which is widely used in radar system. Coded excitation uses a long coded pulse to drive ultrasonic transducer, which can increase the average transmitting power accordingly. In this paper, in order to avoid the overlapping between adjacent echo, we used a four-figure Barker code to drive the ultrasonic transducer, which is modulated at the operating frequency of transducer to improve the emission efficiency. The implementation of coded excitation is closely associated with the transient operating characteristic of ultrasonic transducer. In this paper, the transient operating characteristic of ultrasonic transducer excited by a shock pulse δ(t) is firstly analyzed, and then the exciting pulse generated by special ultrasonic transmitting circuit composing of MD1211 and TC6320. In the final part of the paper, we designed an experiment to validate the coded excitation with transducer operating at 5MHz and a glass filled with ultrasonic coupling liquid as the object. Driven by a FPGA, the ultrasonic transmitting circuit output a four-figure Barker excitation pulse modulated at 5MHz, +/-20 voltage and is consistent with the transient operating characteristic of ultrasonic transducer after matched by matching circuit. The reflected echo from glass possesses coded character, which is identical with the simulating result by Matlab. Furthermore, the signal's amplitude is higher.

  5. 2 kW average power from a pulsed Yb-doped rod-type fiber amplifier.

    PubMed

    Otto, Hans-Jürgen; Stutzki, Fabian; Modsching, Norbert; Jauregui, Cesar; Limpert, Jens; Tünnermann, Andreas

    2014-11-15

    This Letter reports on a fiber-laser system that, employing a 1 m long rod-type photonic-crystal fiber as its main-amplifier, emits a record average output power of 2 kW, by amplifying stretched ps-pulses. A further increase of the output power was only limited by the available laser-diode pump power. The energy of the pulses is 100 μJ, corresponding to MW-level peak powers extracted directly from the fiber of the main amplifier. The corresponding M2 at the maximum output power is <3, due to the onset of mode instabilities. The Letter covers the influence of this effect on the evolution of the beam quality with the output power. The numerical results show that the M2 value settles at around 3, even if the output average power is further increased. PMID:25490490

  6. Development of a High-Average-Power Compton Gamma Source for Lepton Colliders

    SciTech Connect

    Pogorelsky, Igor; Polyanskiy, Mikhail N.; Yakimenko, Vitaliy; Platonenko, Viktor T.

    2009-01-22

    Gamma-({gamma}{sup -}) ray beams of high average power and peak brightness are of demand for a number of applications in high-energy physics, material processing, medicine, etc. One of such examples is gamma conversion into polarized positrons and muons that is under consideration for projected lepton colliders. A {gamma}-source based on the Compton backscattering from the relativistic electron beam is a promising candidate for this application. Our approach to the high-repetition {gamma}-source assumes placing the Compton interaction point inside a CO{sub 2} laser cavity. A laser pulse interacts with periodical electron bunches on each round-trip inside the laser cavity producing the corresponding train of {gamma}-pulses. The round-trip optical losses can be compensated by amplification in the active laser medium. The major challenge for this approach is in maintaining stable amplification rate for a picosecond CO{sub 2}-laser pulse during multiple resonator round-trips without significant deterioration of its temporal and transverse profiles. Addressing this task, we elaborated on a computer code that allows identifying the directions and priorities in the development of such a multi-pass picosecond CO{sub 2} laser. Proof-of-principle experiments help to verify the model and show the viability of the concept. In these tests we demonstrated extended trains of picosecond CO{sub 2} laser pulses circulating inside the cavity that incorporates the Compton interaction point.

  7. NEO-LISP: Deflecting near-earth objects using high average power, repetitively pulsed lasers

    SciTech Connect

    Phipps, C.R.; Michaelis, M.M.

    1994-10-01

    Several kinds of Near-Earth objects exist for which one would like to cause modest orbit perturbations, but which are inaccessible to normal means of interception because of their number, distance or the lack of early warning. For these objects, LISP (Laser Impulse Space Propulsion) is an appropriate technique for rapidly applying the required mechanical impulse from a ground-based station. In order of increasing laser energy required, examples are: (1) repositioning specially prepared geosynchronous satellites for an enhanced lifetime, (2) causing selected items of space junk to re-enter and burn up in the atmosphere on a computed trajectory, and (3) safely deflecting Earth-directed comet nuclei and earth-crossing asteroids (ECA`s) a few tens of meters in size (the most hazardous size). They will discuss each of these problems in turn and show that each application is best matched by its own matrix of LISP laser pulse width, pulse repetition rate, wavelength and average power. The latter ranges from 100W to 3GW for the cases considered. They will also discuss means of achieving the active beam phase error correction during passage through the atmosphere and very large exit pupil in the optical system which are required in each of these cases.

  8. NEO-LISP: Deflecting near-Earth objects using high average power, repetitively pulsed lasers

    NASA Astrophysics Data System (ADS)

    Phipps, C. R.; Michaelis, M. M.

    Several kinds of Near-Earth objects exist for which one would like to cause modest orbit perturbations, but which are inaccessible to normal means of interception because of their number, distance or the lack of early warning. For these objects, LISP (Laser Impulse Space Propulsion) is an appropriate technique for rapidly applying the required mechanical impulse from a ground-based station. In order of increasing laser energy required, examples are: (1) repositioning specially prepared geosynchronous satellites for an enhanced lifetime; (2) causing selected items of space junk to re-enter and burn up in the atmosphere on a computed trajectory; and (3) safely deflecting Earth-directed comet nuclei and earth-crossing asteroids (ECA's) a few tens of meters in size (the most hazardous size). They will discuss each of these problems in turn and show that each application is best matched by its own matrix of LISP laser pulse width, pulse repetition rate, wavelength and average power. The latter ranges from 100W to 3GW for the cases considered. They will also discuss means of achieving the active beam phase error correction during passage through the atmosphere and very large exit pupil in the optical system which are required in each of these cases.

  9. Design of a high average-power FEL driven by an existing 20 MV electrostatic-accelerator

    SciTech Connect

    Kimel, I.; Elias, L.R.

    1995-12-31

    There are some important applications where high average-power radiation is required. Two examples are industrial machining and space power-beaming. Unfortunately, up to date no FEL has been able to show more than 10 Watts of average power. To remedy this situation we started a program geared towards the development of high average-power FELs. As a first step we are building in our CREOL laboratory, a compact FEL which will generate close to 1 kW in CW operation. As the next step we are also engaged in the design of a much higher average-power system based on a 20 MV electrostatic accelerator. This FEL will be capable of operating CW with a power output of 60 kW. The idea is to perform a high power demonstration using the existing 20 MV electrostatic accelerator at the Tandar facility in Buenos Aires. This machine has been dedicated to accelerate heavy ions for experiments and applications in nuclear and atomic physics. The necessary adaptations required to utilize the machine to accelerate electrons will be described. An important aspect of the design of the 20 MV system, is the electron beam optics through almost 30 meters of accelerating and decelerating tubes as well as the undulator. Of equal importance is a careful design of the long resonator with mirrors able to withstand high power loading with proper heat dissipation features.

  10. High-average-power 266 nm generation with a KBe₂BO₃F₂ prism-coupled device.

    PubMed

    Wang, Lirong; Zhai, Naixia; Liu, Lijuan; Wang, Xiaoyang; Wang, Guiling; Zhu, Yong; Chen, Chuangtian

    2014-11-01

    High-average-power fourth harmonic generation (4thHG) of an Nd:YAG laser has been achieved by using a KBe₂BO₃F₂-prism-coupled device (KBBF-PCD) . The highest output power of 7.86 W at 266 nm was obtained with a conversion efficiency of 10%. To our knowledge, this is the highest power ever obtained by a KBBF-PCD. The stability of the 266 nm output power at 3.26 W was measured over a period of 60 minutes, and the standard deviation jitter of the average power was 1.4%. Moreover, the temperature bandwidth for KBBF was also measured at 266nm for the first time,which shows that KBBF has significant advantages in high power 4thHG compared to other major nonlinear optical crystals and is potential for UV applications. PMID:25401859

  11. Power-averaging method to characterize and upscale permeability in DFNs

    NASA Astrophysics Data System (ADS)

    De Dreuzy, J. R.; Davy, P.; Pichot, G.; Le Goc, R.; Maillot, J.; Darcel, C.; Meheust, Y.

    2015-12-01

    In a lot of geological environments, permeability is dominated by the existence of fractures and by their degree of interconnections. Flow properties depend mainly on the statistical properties of the fracture population (length, apertures, orientation), on the network topology, as well as on some detailed properties within fracture planes. None of them can be a priori discarded as fracture networks are potentially close to some percolation threshold. Still, most details are strongly homogenized by the inherent diffusive nature of flows. It should thus be possible to upscale permeability on the basis of a limited number of descriptors. Based on an extensive analysis of 2D and 3D DFNs as well as on reference connectivity structures, we investigate the relation between the local fracture structures and the effective permeability. On one hand poor connectivity, small intersections and fracture closures limit permeability. If these patterns control flow, permeability would derive from a suite of fracture in series dominated by its weakest element. Effective permeability could then be approached by the harmonic mean of the local permeabilities. On the other hand, extended fractures and locally higher fracture densities, enhance permeability. If these patterns control flow, all fractures would take equally part to flow and effective permeability would tend to the arithmetic mean of the local permeabilities. Defined as the relative weight between the two extreme harmonic and arithmetic means, the power-law averaging exponent gives a compact way to compare fracture network hydraulics. It may further lead to some comprehensive upscaling rules. Permeability is not only determined by global connectivity but also by more local effects. We measure them by defining a local connectivity index equal to the number of fracture connections at some reference local scale. Knowledge of the relative local to global effects should help optimizing characterization strategies.

  12. 53 W average power few-cycle fiber laser system generating soft x rays up to the water window.

    PubMed

    Rothhardt, Jan; Hädrich, Steffen; Klenke, Arno; Demmler, Stefan; Hoffmann, Armin; Gotschall, Thomas; Eidam, Tino; Krebs, Manuel; Limpert, Jens; Tünnermann, Andreas

    2014-09-01

    We report on a few-cycle laser system delivering sub-8-fs pulses with 353 μJ pulse energy and 25 GW of peak power at up to 150 kHz repetition rate. The corresponding average output power is as high as 53 W, which represents the highest average power obtained from any few-cycle laser architecture so far. The combination of both high average and high peak power provides unique opportunities for applications. We demonstrate high harmonic generation up to the water window and record-high photon flux in the soft x-ray spectral region. This tabletop source of high-photon flux soft x rays will, for example, enable coherent diffractive imaging with sub-10-nm resolution in the near future.

  13. The world's first high voltage GaN-on-Diamond power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Baltynov, Turar; Unni, Vineet; Narayanan, E. M. Sankara

    2016-11-01

    This paper presents the detailed fabrication method and extensive electrical characterisation results of the first-ever demonstrated high voltage GaN power semiconductor devices on CVD Diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ∼1100 V. Temperature characterisation of capacitance-voltage characteristics and on-state characteristics provides insight on the temperature dependence of key parameters such as threshold voltage, 2DEG sheet carrier concentration, specific on-state resistance, and drain saturation current in the fabricated devices.

  14. Universal solders for direct and powerful bonding on semiconductors, diamond, and optical materials

    NASA Astrophysics Data System (ADS)

    Mavoori, Hareesh; Ramirez, Ainissa G.; Jin, Sungho

    2001-05-01

    The surfaces of electronic and optical materials such as nitrides, carbides, oxides, sulfides, fluorides, selenides, diamond, silicon, and GaAs are known to be very difficult to bond with low melting point solders (<300 °C). We have achieved a direct and powerful bonding on these surfaces by using low temperature solders doped with rare-earth elements. The rare earth is stored in micron-scale, finely-dispersed intermetallic islands (Sn3Lu or Au4Lu), and when released, causes chemical reactions at the interface producing strong bonds. These solders directly bond to semiconductor surfaces and provide ohmic contacts. They can be useful for providing direct electrical contacts and interconnects in a variety of electronic assemblies, dimensionally stable and reliable bonding in optical fiber, laser, or thermal management assemblies.

  15. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1991-01-01

    Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  16. High sustained average power cw and ultrafast Yb:YAG near-diffraction-limited cryogenic solid-state laser.

    PubMed

    Brown, David C; Singley, Joseph M; Kowalewski, Katie; Guelzow, James; Vitali, Victoria

    2010-11-22

    We report what we believe to be record performance for a high average power Yb:YAG cryogenic laser system with sustained output power. In a CW oscillator-single-pass amplifier configuration, 963 W of output power was measured. In a second configuration, a two amplifier Yb:YAG cryogenic system was driven with a fiber laser picosecond ultrafast oscillator at a 50 MHz repetition rate, double-passed through the first amplifier and single-passed through the second, resulting in 758 W of average power output. Pulses exiting the system have a FWHM pulsewidth of 12.4 ps, an energy/pulse of 15.2 μJ, and a peak power of 1.23 MW. Both systems are force convection-cooled with liquid nitrogen and have been demonstrated to run reliably over long time periods.

  17. A Simple Instant-Estimation Method for Time-Average Quantities of Single-Phase Power and Application to Single-Phase Power Grid Connection by Inverter

    NASA Astrophysics Data System (ADS)

    Shinnaka, Shinji

    This paper presents and analyzes a new simple instant-estimation method for time-average quantities such as rms-values of voltage and current, active and reactive powers, and power factor for single-phase power with the fundamental component of constant or nearly-constant frequency by measuring instantaneous values of voltage and current. According to the analyses, the method can instantly estimate time average values with accuracy of the fundamental frequency, and estimation accuracy of power factor is about two times better than that of voltage, current, and powers. The instant-estimation method is simple and can be easily applied to single-phase power control systems that are expected to control instantly and continuously power factor on a single-phase grid by inverter. Based on the proposed instant-estimation method, two-methods for such power control systems are also proposed and their usefulness is verified through simulations.

  18. Error analysis in the measurement of average power with application to switching controllers

    NASA Technical Reports Server (NTRS)

    Maisel, J. E.

    1980-01-01

    Power measurement errors due to the bandwidth of a power meter and the sampling of the input voltage and current of a power meter were investigated assuming sinusoidal excitation and periodic signals generated by a model of a simple chopper system. Errors incurred in measuring power using a microcomputer with limited data storage were also considered. The behavior of the power measurement error due to the frequency responses of first order transfer functions between the input sinusoidal voltage, input sinusoidal current, and the signal multiplier was studied. Results indicate that this power measurement error can be minimized if the frequency responses of the first order transfer functions are identical. The power error analysis was extended to include the power measurement error for a model of a simple chopper system with a power source and an ideal shunt motor acting as an electrical load for the chopper. The behavior of the power measurement error was determined as a function of the chopper's duty cycle and back EMF of the shunt motor. Results indicate that the error is large when the duty cycle or back EMF is small. Theoretical and experimental results indicate that the power measurement error due to sampling of sinusoidal voltages and currents becomes excessively large when the number of observation periods approaches one-half the size of the microcomputer data memory allocated to the storage of either the input sinusoidal voltage or current.

  19. Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation

    NASA Astrophysics Data System (ADS)

    Cadiz, F.; Paget, D.; Rowe, A. C. H.; Berkovits, V. L.; Ulin, V. P.; Arscott, S.; Peytavit, E.

    2013-09-01

    For n- and p-type semiconductors doped above the 1016 cm-3 range, simple analytical expressions for the surface recombination velocity S have been obtained as a function of excitation power P and surface state density NT. These predictions are in excellent agreement with measurements on p-type GaAs films, using a novel polarized microluminescence technique. The effect on S of surface passivation is a combination of the changes of three factors, each of which depends on NT: (i) a power-independent factor which is inversely proportional to NT and (ii) two factors which reveal the effect of photovoltage and the shift of the electron surface quasi Fermi level, respectively. In the whole range of accessible excitation powers, these two factors play a significant role so that S always depends on power. Three physical regimes are outlined. In the first regime, illustrated experimentally by the oxidized GaAs surface, S depends on P as a power law of exponent determined by NT. A decrease of S such as the one induced by sulfide passivation is caused by a marginal decrease of NT. In a second regime, as illustrated by GaInP-encapsulated GaAs, because of the reduced value of S, the photoelectron concentration in the subsurface depletion layer can no longer be neglected. Thus, S-1 depends logarithmically on P and very weakly on surface state density. In a third regime, expected at extremely small values of P, the photovoltage is comparable to the thermal energy, and S increases with P and decreases with increasing NT.

  20. Analysis of the scalability of diffraction-limited fiber lasers and amplifiers to high average power.

    PubMed

    Dawson, Jay W; Messerly, Michael J; Beach, Raymond J; Shverdin, Miroslav Y; Stappaerts, Eddy A; Sridharan, Arun K; Pax, Paul H; Heebner, John E; Siders, Craig W; Barty, C P J

    2008-08-18

    We analyze the scalability of diffraction-limited fiber lasers considering thermal, non-linear, damage and pump coupling limits as well as fiber mode field diameter (MFD) restrictions. We derive new general relationships based upon practical considerations. Our analysis shows that if the fiber's MFD could be increased arbitrarily, 36 kW of power could be obtained with diffraction-limited quality from a fiber laser or amplifier. This power limit is determined by thermal and non-linear limits that combine to prevent further power scaling, irrespective of increases in mode size. However, limits to the scaling of the MFD may restrict fiber lasers to lower output powers.

  1. Analysis of the scalability of diffraction-limited fiber lasers and amplifiers to high average power.

    PubMed

    Dawson, Jay W; Messerly, Michael J; Beach, Raymond J; Shverdin, Miroslav Y; Stappaerts, Eddy A; Sridharan, Arun K; Pax, Paul H; Heebner, John E; Siders, Craig W; Barty, C P J

    2008-08-18

    We analyze the scalability of diffraction-limited fiber lasers considering thermal, non-linear, damage and pump coupling limits as well as fiber mode field diameter (MFD) restrictions. We derive new general relationships based upon practical considerations. Our analysis shows that if the fiber's MFD could be increased arbitrarily, 36 kW of power could be obtained with diffraction-limited quality from a fiber laser or amplifier. This power limit is determined by thermal and non-linear limits that combine to prevent further power scaling, irrespective of increases in mode size. However, limits to the scaling of the MFD may restrict fiber lasers to lower output powers. PMID:18711562

  2. Alternative lattice options for energy recovery in high-average-power high-efficiency free-electron lasers

    SciTech Connect

    Piot, P.; /Northern Illinois U. /NICADD, DeKalb /Fermilab

    2009-03-01

    High-average-power free-electron lasers often rely on energy-recovering linacs. In a high-efficiency free electron laser, the main limitation to high average power stems from the fractional energy spread induced by the free-electron laser process. Managing beams with large fractional energy spread while simultaneously avoiding beam losses is extremely challenging and relies on intricate longitudinal phase space manipulations. In this paper we discuss a possible alternative technique that makes use of an emittance exchange between one of the transverse and the longitudinal phase spaces.

  3. High average power harmonic mode-locking of a Raman fiber laser based on nonlinear polarization evolution

    NASA Astrophysics Data System (ADS)

    Liu, J.; Zhao, C. J.; Gao, Y. X.; Fan, D. Y.

    2016-03-01

    We experimentally demonstrate the operation of a stable harmonically mode-locked Raman fiber laser based on the nonlinear polarization rotation technique. A maximum average output power of up to 235 mW is achieved at the repetition rate of 466.2 MHz, corresponding to the 1665th order harmonic mode-locking. The temporal width of the mode-locked pulse train is 450 ps. The experimental results should shed some light on the design of wavelength versatile ultrashort lasers with high repetition rate and average output power.

  4. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators

    SciTech Connect

    Hane, G.J.; Yorozu, M.; Sogabe, T.; Suzuki, S.

    1985-04-01

    The review revealed that significant activity is under way in the research of amorphous metals, but that little fundamental work is being pursued on metal oxide varistors and high-power semiconductors. Also, the investigation of long-term research program plans for superconducting generators reveals that activity is at a low level, pending the recommendations of a study currently being conducted through Japan's Central Electric Power Council.

  5. Semiconductor disk laser-pumped subpicosecond holmium fibre laser

    SciTech Connect

    Chamorovskiy, A Yu; Marakulin, A V; Leinonen, T; Kurkov, Andrei S; Okhotnikov, Oleg G

    2012-01-31

    The first passively mode-locked holmium fibre laser has been demonstrated, with a semiconductor saturable absorber mirror (SESAM) as a mode locker. Semiconductor disk lasers have been used for the first time to pump holmium fibre lasers. We obtained 830-fs pulses at a repetition rate of 34 MHz with an average output power of 6.6 mW.

  6. Efficient processing of CFRP with a picosecond laser with up to 1.4 kW average power

    NASA Astrophysics Data System (ADS)

    Onuseit, V.; Freitag, C.; Wiedenmann, M.; Weber, R.; Negel, J.-P.; Löscher, A.; Abdou Ahmed, M.; Graf, T.

    2015-03-01

    Laser processing of carbon fiber reinforce plastic (CFRP) is a very promising method to solve a lot of the challenges for large-volume production of lightweight constructions in automotive and airplane industries. However, the laser process is actual limited by two main issues. First the quality might be reduced due to thermal damage and second the high process energy needed for sublimation of the carbon fibers requires laser sources with high average power for productive processing. To achieve thermal damage of the CFRP of less than 10μm intensities above 108 W/cm² are needed. To reach these high intensities in the processing area ultra-short pulse laser systems are favored. Unfortunately the average power of commercially available laser systems is up to now in the range of several tens to a few hundred Watt. To sublimate the carbon fibers a large volume specific enthalpy of 85 J/mm³ is necessary. This means for example that cutting of 2 mm thick material with a kerf width of 0.2 mm with industry-typical 100 mm/sec requires several kilowatts of average power. At the IFSW a thin-disk multipass amplifier yielding a maximum average output power of 1100 W (300 kHz, 8 ps, 3.7 mJ) allowed for the first time to process CFRP at this average power and pulse energy level with picosecond pulse duration. With this unique laser system cutting of CFRP with a thickness of 2 mm an effective average cutting speed of 150 mm/sec with a thermal damage below 10μm was demonstrated.

  7. Efficient power extraction in surface-emitting semiconductor lasers using graded photonic heterostructures.

    PubMed

    Xu, Gangyi; Colombelli, Raffaele; Khanna, Suraj P; Belarouci, Ali; Letartre, Xavier; Li, Lianhe; Linfield, Edmund H; Davies, A Giles; Beere, Harvey E; Ritchie, David A

    2012-01-01

    Symmetric and antisymmetric band-edge modes exist in distributed feedback surface-emitting semiconductor lasers, with the dominant difference being the radiation loss. Devices generally operate on the low-loss antisymmetric modes, although the power extraction efficiency is low. Here we develop graded photonic heterostructures, which localize the symmetric mode in the device centre and confine the antisymmetric modes close to the laser facet. This modal spatial separation is combined with absorbing boundaries to increase the antisymmetric mode loss, and force device operation on the symmetric mode, with elevated radiation efficiency. Application of this concept to terahertz quantum cascade lasers leads to record-high peak-power surface emission (>100 mW) and differential efficiencies (230 mW A(-1)), together with low-divergence, single-lobed emission patterns, and is also applicable to continuous-wave operation. Such flexible tuning of the radiation loss using graded photonic heterostructures, with only a minimal influence on threshold current, is highly desirable for optimizing second-order distributed feedback lasers. PMID:22805559

  8. Stopping power of fluorides and semiconductor organic films for low-velocity protons

    SciTech Connect

    Serkovic Loli, L. N.; Sanchez, E. A.; Grizzi, O.; Arista, N. R.

    2010-02-15

    A combined experimental and theoretical study of the energy loss of protons in fluorides and organic films is presented. The measurements were performed in fresh AlF{sub 3}, LiF, and N,N{sup '}-bis(1-ethylpropyl)-perylene-3,4,9,10-tetracarboxdiimide (EP-PTCDI) evaporated in situ on self-supported C or Ag foils, covering the very low energy range from 25 keV down to 0.7 keV. The transmission method is used in combination with time-of-flight (TOF) spectrometry. In the case of fluorides with large band gap energies (AlF{sub 3} and LiF), the experimental stopping power increases almost linearly with the mean projectile velocity showing a velocity threshold at about 0.1 a.u. These features are well reproduced by a model based on quantum scattering theory that takes into account the velocity distribution and the excitation of the active 2p electrons in the F{sup -} anions, and the properties of the electronic bands of the insulators. In the case of the semiconductor organic film with a lower gap, the experimental stopping power increases linearly with the mean projectile velocity without presenting a clear threshold. This trend is also reproduced by the proposed model.

  9. Transmission line pulse system for avalanche characterization of high power semiconductor devices

    NASA Astrophysics Data System (ADS)

    Riccio, Michele; Ascione, Giovanni; De Falco, Giuseppe; Maresca, Luca; De Laurentis, Martina; Irace, Andrea; Breglio, Giovanni

    2013-05-01

    Because of the increasing in power density of electronic devices for medium and high power application, reliabilty of these devices is of great interest. Understanding the avalanche behaviour of a power device has become very important in these last years because it gives an indication of the maximum energy ratings which can be seen as an index of the device ruggedness. A good description of this behaviour is given by the static IV blocking characteristc. In order to avoid self heating, very relevant in high power devices, very short pulses of current have to be used, whose value can change from few milliamps up to tens of amps. The most used method to generate short pulses is the TLP (Transmission Line Pulse) test, which is based on charging the equivalent capacitance of a transmission line to high value of voltage and subsequently discharging it onto a load. This circuit let to obtain very short square pulses but it is mostly used for evaluate the ESD capability of semiconductor and, in this environment, it generates pulses of low amplitude which are not high enough to characterize the avalanche behaviour of high power devices . Advanced TLP circuit able to generate high current are usually very expensive and often suffer of distorption of the output pulse. In this article is proposed a simple, low cost circuit, based on a boosted-TLP configuration, which is capable to produce very square pulses of about one hundreds of nanosecond with amplitude up to some tens of amps. A prototype is implemented which can produce pulses up to 20A of amplitude with 200 ns of duration which can characterize power devices up to 1600V of breakdown voltage. Usage of microcontroller based logic make the circuit very flexible. Results of SPICE simulation are provided, together with experimental results. To prove the effectiveness of the circuit, the I-V blocking characteristics of two commercial devices, namely a 600V PowerMOS and a 1200V Trench-IGBT, are measured at different

  10. High-average-power and high-beam-quality Innoslab picosecond laser amplifier.

    PubMed

    Xu, Liu; Zhang, Hengli; Mao, Yefei; Yan, Ying; Fan, Zhongwei; Xin, Jianguo

    2012-09-20

    We demonstrated a laser-diode, end-pumped picosecond amplifier. With effective shaping of the seed laser, we achieved 73 W amplified laser output at the pump power of 255 W, and the optical-optical efficiency was about 28%. The beam propagation factors M(2) measured at the output power of 60 W in the horizontal direction and the vertical direction were 1.5 and 1.4, respectively.

  11. A Code to Produce Cell Averaged Cross Sections for Fast Critical Assemblies and Fast Power Reactors.

    1987-05-14

    Version 00 SLAROM solves the neutron integral transport equations to determine the flux distribution and spectra in a fast reactor lattice and calculates cell averaged effective cross sections. The code uses multigroup data of the type in DLC-111/JFS that use Bondarenko factors for resonance effects.

  12. Integrated Tm:fiber MOPA with polarized output and narrow linewidth with 100 W average power.

    PubMed

    Shah, Lawrence; Sims, R Andrew; Kadwani, Pankaj; Willis, Christina C C; Bradford, Joshua B; Pung, Aaron; Poutous, Menelaos K; Johnson, Eric G; Richardson, Martin

    2012-08-27

    We report on a Tm:fiber master oscillator power amplifier (MOPA) system producing 109 W CW output power, with >15 dB polarization extinction ratio, sub-nm spectral linewidth, and M2 <1.25. The system consists of polarization maintaining (PM) fiber and PM-fiber components including tapered fiber bundle pump combiners, a single-mode to large mode area mode field adapter, and a fiber-coupled isolator. The laser components ultimately determine the system architecture and the limits of laser performance, particularly considering the immature and rapidly developing state of fiber components in the 2 μm wavelength regime. PMID:23037103

  13. Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm

    SciTech Connect

    Gorlachuk, P V; Ivanov, A V; Kurnosov, V D; Kurnosov, K V; Romantsevich, V I; Simakov, V A; Chernov, R V

    2014-02-28

    We report the simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data. (lasers)

  14. Error analysis in the measurement of average power with application to switching controllers

    NASA Technical Reports Server (NTRS)

    Maisel, J. E.

    1979-01-01

    The behavior of the power measurement error due to the frequency responses of first order transfer functions between the input sinusoidal voltage, input sinusoidal current and the signal multiplier was studied. It was concluded that this measurement error can be minimized if the frequency responses of the first order transfer functions are identical.

  15. High average power scaling of optical parametric amplification through cascaded difference-frequency generators

    DOEpatents

    Jovanovic, Igor; Comaskey, Brian J.

    2004-09-14

    A first pump pulse and a signal pulse are injected into a first optical parametric amplifier. This produces a first amplified signal pulse. At least one additional pump pulse and the first amplified signal pulse are injected into at least one additional optical parametric amplifier producing an increased power coherent optical pulse.

  16. Does Stevens's Power Law for Brightness Extend to Perceptual Brightness Averaging?

    ERIC Educational Resources Information Center

    Bauer, Ben

    2009-01-01

    Stevens's power law ([Psi][infinity][Phi][beta]) captures the relationship between physical ([Phi]) and perceived ([Psi]) magnitude for many stimulus continua (e.g., luminance and brightness, weight and heaviness, area and size). The exponent ([beta]) indicates whether perceptual magnitude grows more slowly than physical magnitude ([beta] less…

  17. Providing power for miniaturized medical implants: triplet sensitization of semiconductor surfaces.

    PubMed

    Benniston, Andrew C; Harriman, Anthony; Yang, Songjie

    2013-07-28

    Here, we recognize the growing significance of miniaturized devices as medical diagnostic tools and highlight the need to provide a convenient means of powering such instruments when implanted into the body. One of the most promising approaches to this end involves using a light-collection facility to absorb incident white light and transfer the photonic energy to a tiny semiconductor embedded on the device. Although fluorescent organic molecules offer strong potential as modules for such solar collectors, we emphasize the promise offered by transition metal complexes. Thus, an extended series of binuclear Ru(II)/Os(II) poly(pyridine) complexes has been shown to be highly promising sensitizers for amorphous silicon solar cells. These materials absorb a high fraction of visible light while the Ru(II)-based units possess triplet energies that are comparable to those of the naphthalene-based bridge. The metal complex injects a triplet exciton into the bridge and this, in turn, is trapped by the Os(II)-based terminal. The result is extremely efficacious triplet-energy transfer; at room temperature the rate of energy transfer is independent of distance over some 6 nm and only weakly dependent on temperature.

  18. Compact, High Power, Multi-Spectral Mid-Infrared Semiconductor Laser Package

    NASA Astrophysics Data System (ADS)

    Guo, Bujin; Hwang, Wen-Yen; Lin, Chich-Hsiang

    2001-10-01

    Through a vertically integrated effort involving atomic level material engineering, advanced device processing development, state-of-the-art optomechanical packaging, and thermal management, Applied Optoelectronics, Inc. (AOI), University of Houston (U H), and Physical Science, Inc. (PSI) have made progress in both Sb-based type-II semiconductor material and in P-based type-I laser device development. We have achieved record performance on inP based quantum cascade continuous wave (CW) laser (with more than 5 mW CW power at 210 K). Grating-coupled external-cavity quantum cascade lasers were studied for temperatures from 20 to 230 K. A tuning range of 88 nm has been obtained at 80 K. The technology can be made commercially available and represents a significant milestone with regard to the Dual Use Science and Technology (DUST) intention of fostering dual use commercial technology for defense need. AOI is the first commercial company to ship products of this licensed technology.

  19. High-average-power dye laser at Lawrence Livermore National Laboratory.

    PubMed

    Bass, I L; Bonanno, R E; Hackel, R P; Hammond, P R

    1992-11-20

    The copper-laser-pumped dye laser system developed at the Lawrence Livermore National Laboratory (LLNL) is now capable of sustained, efficient, and reliable operation at total powers exceeding 2500 W and single amplifier chain powers exceeding 1300 W. Wavelength center frequency stability is maintainable to < 50 MHz. Laser dyes developed at LLNL permit tunability from 550 to 650 nm. Wave-front quality is < lambda/4 peak to valley. The system is operated remotely with the aid of a comprehensive set of diagnostics. Besides supporting its primary atomic-vapor-laser-isotope-separation mission, the system is being used in alternate applications such as materials processing and the generation of artificial guide stars. PMID:20802559

  20. High-average-power diode-end-pumped intracavity-doubled Nd:YAG laser

    SciTech Connect

    Honea, E.C.; Ebbers, C.A.; Beach, R.J.; Speth, J.A.; Emanuel, M.S>; Skidmore, J.A.; Payne, S.A.

    1998-02-12

    A compact diode-pumped ND:YAG laser was frequency-doubled to 0.532 {mu}m with an intracavity KTP or LBO crystal using a `V` cavity configuration. Two acousto-optic Q-switches were employed at repetition rates of 10-30 kHz. Dichroic fold and end mirrors were used to output two beams with up to 140 W of 0.532 {mu}m power using KTP and 116 W using LBO as the frequency doubling crystal. This corresponds to 66% of the maximum output power at 1.064 {mu}m obtained with an optimized output coupler reflectivity. The minimum output pulse duration varied with repetition rate from 90 to 130 ns. The multimode output beam had a smooth profile and a beam quality of M{sup 2} = 5 1.

  1. Program THEK energy production units of average power and using thermal conversion of solar radiation

    NASA Technical Reports Server (NTRS)

    1978-01-01

    General studies undertaken by the C.N.R.S. in the field of solar power plants have generated the problem of building energy production units in the medium range of electrical power, in the order of 100 kW. Among the possible solutions, the principle of the use of distributed heliothermal converters has been selected as being, with the current status of things, the most advantageous solution. This principle consists of obtaining the conversion of concentrated radiation into heat by using a series of heliothermal conversion modules scattered over the ground; the produced heat is collected by a heat-carrying fluid circulating inside a thermal loop leading to a device for both regulation and storage.

  2. Intracavity, adaptive correction of a high-average-power, solid-state, heat-capacity laser

    SciTech Connect

    LaFortune, K N; Hurd, R L; Brase, J M; Yamamoto, R M

    2005-01-05

    The Solid-State, Heat-Capacity Laser (SSHCL) program at Lawrence Livermore National Laboratory is a multigeneration laser development effort scalable to the megawatt power levels. Wavefront quality is a driving metric of its performance. A deformable mirror with over 100 degrees of freedom situated within the cavity is used to correct both the static and dynamic aberrations sensed with a Shack-Hartmann wavefront sensor. The laser geometry is an unstable, confocal resonator with a clear aperture of 10 cm x 10 cm. It operates in a pulsed mode at a high repetition rate (up to 200 Hz) with a correction being applied before each pulse. Wavefront information is gathered in real-time from a low-power pick-off of the high-power beam. It is combined with historical trends of aberration growth to calculate a correction that is both feedback and feed-forward driven. The overall system design, measurement techniques and correction algorithms are discussed. Experimental results are presented.

  3. High-repetition rate industrial TEA CO2 laser with average output power of 1.5 kW

    NASA Astrophysics Data System (ADS)

    Wan, Chongyi; Liu, Shiming; Zhou, Jinwen; Qi, Jilan; Yang, Xiaola; Wu, Jin; Tan, Rongqing; Wang, Lichun; Mei, Qichu

    1995-03-01

    High power high repetition rate TEA CO2 laser has potential importance in material processing such as shock hardening, glazing, drilling, welding, and cutting for high damage threshold materials, as well as in chemical reaction and isotope separation. This paper describes a transverse-flow closed-cycle UV-preionized TEA CO2 laser with peak pulse power of 20 MW, maximum average power of 1.5 KW at repetition rate of 300 HZ. The laser has compact constructure of gas flow circulation system using tangential fans. With addition of small amounts of H2 and CO to the normal CO2-N2-He gas mixture, one filling sealed operating lifetime is up to millions of pulses. A novel spark gap switch has been developed for very high repetition rate laser discharge in the condition of high pulse power.

  4. High energy, high average power solid state green or UV laser

    DOEpatents

    Hackel, Lloyd A.; Norton, Mary; Dane, C. Brent

    2004-03-02

    A system for producing a green or UV output beam for illuminating a large area with relatively high beam fluence. A Nd:glass laser produces a near-infrared output by means of an oscillator that generates a high quality but low power output and then multi-pass through and amplification in a zig-zag slab amplifier and wavefront correction in a phase conjugator at the midway point of the multi-pass amplification. The green or UV output is generated by means of conversion crystals that follow final propagation through the zig-zag slab amplifier.

  5. Rate-equation analysis for the frequency-chirp-to-modulated-power ratio of a semiconductor-diode laser

    SciTech Connect

    Welford, D.R.

    1985-11-01

    An expression for the frequency chirp to modulated power ratio (CPR) is derived from a rate-equation analysis of the small-signal, injection-current modulation in a semiconductor diode laser. The model includes the effect of lateral carrier diffusion across the active region of the laser diode. The modulation-frequency dependence of the CPR is flat from dc to a few hundred megahertz, beyond which it is proportional to the modulation frequency.

  6. A rate equation analysis for the frequency chirp to modulated power ratio of a semiconductor diode laser

    SciTech Connect

    Welford, D.

    1985-11-01

    An expression for the frequency chirp to modulated power ratio (CPR) is derived from a rate equation analysis of the small-signal, injection current modulation in a semiconductor diode laser. The model includes the effect of lateral carrier diffusion across the active region of the laser diode. The modulation frequency dependence of the CPR is flat from dc to a few hundred megahertz, beyond which it is proportional to the modulation frequency.

  7. Non-Invasive Beam Detection in a High-Average Power Electron Accelerator

    SciTech Connect

    Williams, J.; Biedron, S.; Harris, J.; Martinez, J.; Milton, S. V.; Van Keuren, J.; Benson, Steve V.; Evtushenko, Pavel; Neil, George R.; Zhang, Shukui

    2013-12-01

    For a free-electron laser (FEL) to work effectively the electron beam quality must meet exceptional standards. In the case of an FEL operating at infrared wavelengths in an amplifier configuration the critical phase space tends to be in the longitudinal direction. Achieving high enough longitudinal phase space density directly from the electron injector system of such an FEL is difficult due to space charge effects, thus one needs to manipulate the longitudinal phase space once the beam energy reaches a sufficiently high value. However, this is fraught with problems. Longitudinal space charge and coherent synchrotron radiation can both disrupt the overall phase space, furthermore, the phase space disruption is exacerbated by the longitudinal phase space manipulation process required to achieve high peak current. To achieve and maintain good FEL performance one needs to investigate the longitudinal emittance and be able to measure it during operation preferably in a non-invasive manner. Using the electro-optical sampling (EOS) method, we plan to measure the bunch longitudinal profile of a high-energy (~120-MeV), high-power (~10kW or more FEL output power) beam.

  8. A novel FFT/IFFT based peak-to-average power reduction method for OFDM communication systems using tone reservation

    NASA Astrophysics Data System (ADS)

    Besong, Samuel Oru; Yu, Xiaoyou; Li, Bin; Hou, Weibing; Wang, Xiaochun

    2011-10-01

    One of the main drawbacks of OFDM systems is the high Peak-to-Average Power ratio, which could limit transmission efficiency and efficient use of HPA. In this paper we present a modified tone reservation scheme for PAPR reduction using FFT iterations to generate the tones. In this Scheme, the reserve tones are designed to both cancel peaks and slightly increase the average power to induce a better PAPR reduction..The tones are generated by means of 2 FFT operations and the process is sometimes iterated to achieve better PAPR reductions. This scheme achieves a significant PAPR reduction of at least 4.6dB when about 4% of the carriers are used as reserve tones and with even lesser iterations when simulated in an OFDM system.

  9. Edge-facet pumped, multi-aperture, thin-disk laser geometry for very high average power output scaling

    DOEpatents

    Zapata, Luis E.

    2004-12-21

    The average power output of a laser is scaled, to first order, by increasing the transverse dimension of the gain medium while increasing the thickness of an index matched light guide proportionately. Strategic facets cut at the edges of the laminated gain medium provide a method by which the pump light introduced through edges of the composite structure is trapped and passes through the gain medium repeatedly. Spontaneous emission escapes the laser volume via these facets. A multi-faceted disk geometry with grooves cut into the thickness of the gain medium is optimized to passively reject spontaneous emission generated within the laser material, which would otherwise be trapped and amplified within the high index composite disk. Such geometry allows the useful size of the laser aperture to be increased, enabling the average laser output power to be scaled.

  10. New Tone Reservation Technique for Peak to Average Power Ratio Reduction

    NASA Astrophysics Data System (ADS)

    Wilharm, Joachim; Rohling, Hermann

    2014-09-01

    In Orthogonal Frequency Division Multiplexing (OFDM) the transmit signals have a highly fluctuating, non-constant envelope which is a technical challenge for the High Power Amplifier (HPA). Without any signal processing procedures the amplitude peaks of the transmit signal will be clipped by the HPA resulting in out-ofband radiation and in bit error rate (BER) performance degradation. The classical Tone Reservation (TR) technique calculates a correction signal in an iterative way to reduce the amplitude peaks. However this step leads to a high computational complexity. Therefore, in this paper an alternative TR technique is proposed. In this case a predefined signal pattern is shifted to any peak position inside the transmit signal and reduces thereby all amplitude peaks. This new procedure is able to outperform the classical TR technique and has a much lower computational complexity.

  11. Laser galvanometric scanning system for improved average power uniformity and larger scanning area.

    PubMed

    Yang, Pei-Ming; Lo, Yu-Lung; Chang, Yuan-Hao

    2016-07-01

    A new laser galvanometric scanning optical system incorporating a dynamic-tilt focusing lens is proposed to improve the laser spot performance in adaptive manufacturing applications. The simulations focus specifically on the laser spot size, the spot profile, the spot position, the spot energy distribution, and the size of the scanning working field. It is shown that for a designed spot size of 50 μm, the proposed system achieves an average spot size of 50.5 μm. Moreover, the maximum position deviation of the laser beam is reduced from (x=-3.02%, y=1.30%) in a traditional scanning system to (x=-0.055%, y=0.162%) in the proposed system. Finally, the maximum working field area is increased by around 240% compared to that of a traditional system. Overall, the results show that the proposed laser galvanometric scanning system achieves a small spot size, a symmetrical and round spot profile, a uniform spot energy distribution, and a large working area. As a result, it is ideally suited to rapid prototyping applications. PMID:27409183

  12. Simulation of a high-average power free-electron laser oscillator

    SciTech Connect

    H.P. Freund; M. Shinn; S.V. Benson

    2007-03-01

    In this paper, we compare the 10 kW-Upgrade experiment at the Thomas Jefferson National Accelerator Facility in Newport News, VA, with numerical simulations using the medusa code. medusa is a three-dimensional FEL simulation code that is capable of treating both amplifiers and oscillators in both the steady-state and time-dependent regimes. medusa employs a Gaussian modal expansion, and treats oscillators by decomposing the modal representation at the exit of the wiggler into the vacuum Gaussian modes of the resonator and then analytically determining the propagation of these vacuum resonator modes through the resonator back to the entrance of the wiggler in synchronism with the next electron bunch. The bunch length in the experiment is of the order of 380–420 fsec FWHM. The experiment operates at a wavelength of about 1.6 microns and the wiggler is 30 periods in length; hence, the slippage time is about 160 fsec. Because of this, slippage is important, and must be included in the simulation. The observed single pass gain is 65%–75% and, given the experimental uncertainties, this is in good agreement with the simulation. Multipass simulations including the cavity detuning yield an output power of 12.4 kW, which is also in good agreement with the experiment.

  13. Application of statistical methods (SPC) for an optimized control of the irradiation process of high-power semiconductors

    NASA Astrophysics Data System (ADS)

    Mittendorfer, J.; Zwanziger, P.

    2000-03-01

    High-power bipolar semiconductor devices (thyristors and diodes) in a disc-type shape are key components (semiconductor switches) for high-power electronic systems. These systems are important for the economic design of energy transmission systems, i.e. high-power drive systems, static compensation and high-voltage DC transmission lines. In their factory located in Pretzfeld, Germany, the company, eupec GmbH+Co.KG (eupec), is producing disc-type devices with ceramic encapsulation in the high-end range for the world market. These elements have to fulfil special customer requirements and therefore deliver tailor-made trade-offs between their on-state voltage and dynamic switching behaviour. This task can be achieved by applying a dedicated electron irradiation on the semiconductor pellets, which tunes this trade-off. In this paper, the requirements to the irradiation company Mediscan GmbH, from the point of view of the semiconductor manufacturer, are described. The actual strategy for controlling the irradiation results to fulfil these requirements are presented, together with the choice of relevant parameters from the viewpoint of the irradiation company. The set of process parameters monitored, using statistical process control (SPC) techniques, includes beam current and energy, conveyor speed and irradiation geometry. The results are highlighted and show the successful co-operation in this business. Watching this process vice versa, an idea is presented and discussed to develop the possibilities of a highly sensitive dose detection device by using modified diodes, which could function as accurate yet cheap and easy-to-use detectors as routine dosimeters for irradiation institutes.

  14. High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band.

    PubMed

    Rantamäki, Antti; Sirbu, Alexei; Saarinen, Esa J; Lyytikäinen, Jari; Mereuta, Alexandru; Iakovlev, Vladimir; Kapon, Eli; Okhotnikov, Oleg G

    2014-08-15

    We present 6.1 W of output power from a flip-chip semiconductor disk laser (SDL) emitting in the 1.3 μm wavelength region. This is the first demonstration of a flip-chip SDL in this wavelength range with output powers that are comparable to those obtained with intracavity diamond heat spreaders. The flip-chip configuration circumvents the optical distortions and losses that the intracavity diamond heat spreaders can introduce into the laser cavity. This is essential for several key applications of SDLs. PMID:25121892

  15. Ultrafast laser with an average power of 120 W at 515 nm and a highly dynamic repetition rate in the MHz range for novel applications in micromachining

    NASA Astrophysics Data System (ADS)

    Harth, F.; Piontek, M. C.; Herrmann, T.; L'huillier, J. A.

    2016-03-01

    A new generation of resonant scanners in the kHz-range shows ultra-high deflection speeds of more than 1000m/s but suffer from an inherent nonlinear mirror oscillation. If this oscillation is not compensated, a typical bitmap, written point by point, would be strongly distorted because of the decreasing spot distance at the turning point of the scanning mirror. However, this can be avoided by a dynamic adaption of the repetition rate (RR) of the ultrafast laser. Since resonant scanners are operated in the 10 kHz-range, this means that the RR has to be continuously swept up to several 10 000 times per second between e.g. 5MHz and 10 MHz. High-speed continuous adaption of the RR could also optimize laser micromachining of narrow curved geometries, where nowadays a time consuming approximation with numerous vectors is required. We present a laser system, which is capable of sweeping the RR more than 32 000 times per second between 5MHz and 10MHz at an average output power of more than 120W at 515nm with a pulse duration of about 40 ps. The laser consists of a semiconductor oscillator, a 3-stage fiber pre-amplifier, a solid state InnoSlab power amplifier and a SHG stage. We systematically analyzed the dynamic of the laser system as well as the spectral and temporal behavior of the optical pulses. Switching the repetition rate typically causes a varying pulse energy, which could affect the machining quality over one scanning line. This effect will be analyzed and discussed. Possible techniques to compensate or avoid this effect will be considered.

  16. Yb-fiber-laser-based, 1.8 W average power, picosecond ultraviolet source at 266 nm.

    PubMed

    Chaitanya Kumar, S; Canals Casals, J; Sanchez Bautista, E; Devi, K; Ebrahim-Zadeh, M

    2015-05-15

    We report a compact, stable, high-power, picosecond ultraviolet (UV) source at 266 nm based on simple single-pass two-step fourth-harmonic generation (FHG) of a mode-locked Yb-fiber laser at 79.5 MHz in LiB3O5 (LBO) and β-BaB2O4. Using a 30-mm-long LBO crystal for single-pass second-harmonic generation, we achieve up to 9.1 W of average green power at 532 nm for 16.8 W of Yb-fiber power at a conversion efficiency of 54% in 16.2 ps pulses with a TEM00 spatial profile and passive power stability better than 0.5% rms over 16 h. The generated green radiation is then used for single-pass FHG into the UV, providing as much as 1.8 W of average power at 266 nm under the optimum focusing condition in the presence of spatial walk-off, at an overall FHG conversion efficiency of ∼11%. The generated UV output exhibits passive power stability better than 4.6% rms over 1.5 h and beam pointing stability better than 84 μrad over 1 h. The UV output beam has a circularity of >80% in high beam quality with the TEM00 mode profile. To the best of our knowledge, this is the first report of picosecond UV generation at 266 nm at megahertz repetition rates. PMID:26393749

  17. Characterization of a High-SpeedHigh-Power Semiconductor Master-Oscillator Power-Amplifier (MOPA) Laser as a Free-Space Transmitter

    NASA Astrophysics Data System (ADS)

    Wright, M. W.

    2000-04-01

    Semiconductor lasers offer promise as high-speed transmitters for free-space optical communication systems. This article examines the performance of a semiconductor laser system in a master-oscillator power-amplifier (MOPA) geometry developed through a Small Business Innovation Research (SBIR) contract with SDL, Inc. The compact thermo-electric cooler (TEC) packaged device is capable of 1-W output optical power at greater than 2-Gb/s data rates and a wavelength of 960 nm. In particular, we have investigated the effects of amplified spontaneous emission on the modulation extinction ratio and bit-error rate (BER) performance. BERs of up to 10^(-9) were possible at 1.4 Gb/s; however, the modulation extinction ratio was limited to 6 dB. Other key parameters for a free-space optical transmitter, such as the electrical-optical efficiency (24 percent) and beam quality, also were measured.

  18. The Mercury Laser System-A scaleable average-power laser for fusion and beyond

    SciTech Connect

    Ebbers, C A; Moses, E I

    2008-03-26

    Nestled in a valley between the whitecaps of the Pacific and the snowcapped crests of the Sierra Nevada, Lawrence Livermore National Laboratory (LLNL) is home to the nearly complete National Ignition Facility (NIF). The purpose of NIF is to create a miniature star-on demand. An enormous amount of laser light energy (1.8 MJ in a pulse that is 20 ns in duration) will be focused into a small gold cylinder approximately the size of a pencil eraser. Centered in the gold cylinder (or hohlraum) will be a nearly perfect sphere filled with a complex mixture of hydrogen gas isotopes that is similar to the atmosphere of our Sun. During experiments, the laser light will hit the inside of the gold cylinder, heating the metal until it emits X-rays (similar to how your electric stove coil emits visible red light when heated). The X-rays will be used to compress the hydrogen-like gas with such pressure that the gas atoms will combine or 'fuse' together, producing the next heavier element (helium) and releasing energy in the form of energetic particles. 2010 will mark the first credible attempt at this world-changing event: the achievement of fusion energy 'break-even' on Earth using NIF, the world's largest laser! NIF is anticipated to eventually perform this immense technological accomplishment once per week, with the capability of firing up to six shots per day - eliminating the need for continued underground testing of our nation's nuclear stockpile, in addition to opening up new realms of science. But what about the day after NIF achieves ignition? Although NIF will achieve fusion energy break-even and gain, the facility is not designed to harness the enormous potential of fusion for energy generation. A fusion power plant, as opposed to a world-class engineering research facility, would require that the laser deliver drive pulses nearly 100,000 times more frequently - a rate closer to 10 shots per second as opposed to several shots per day.

  19. Progress of high average power, short-pulse laser technology for the Compton X-ray source

    NASA Astrophysics Data System (ADS)

    Endo, Akira; Sakaue, Kazuyuki; Washio, Masakazu

    2011-05-01

    Recent progress is reported in the development of high average power, short-pulse laser technology, which is relevant toward achieving a high X-ray flux in a Compton X-ray source for use in various applications. The Yb-based laser material is suitable for high-pulse energy in a picosecond pulse length. The thin disc amplifier technology is now close to operating continuously with 1 J, 2 ps, at a 100 Hz repetition rate with a multi-pass amplification scheme. The average power is 100 W at a 1030 nm wavelength. The laser beam quality is fine enough to focus on the bunched electron beam from a photocathode/S-band linac single-pass accelerator and to generate an X-ray flux of 109 photons/s at 100 Hz. The short-pulse carbon dioxide (CO2) laser has an advantage for a Compton X-ray source in high X-ray flux applications. The short-pulse amplification of the CO2 laser pulse has been demonstrated, at a power level of more than 10 kW at a 100 kHz repetition rate in a single laser beam, for application in the plasma generation for an extreme ultraviolet light source, using a commercially available RF-pumped laser module. The pulse length is now limited to around 1 ns because of the bandwidth of the low-pressure gain medium. The additional pulse compression scheme makes a high average power, pulsed CO2 laser ideal for various applications of the Compton X-ray source.

  20. High-power multiple-frequency narrow-linewidth laser source based on a semiconductor tapered amplifier.

    PubMed

    Ferrari, G; Mewes, M O; Schreck, F; Salomon, C

    1999-02-01

    The output of two grating-stabilized external-cavity diode lasers was injected into a semiconductor tapered amplif ier in a master oscillator-power amplif ier (MOPA) configuration. At a wavelength of 671 nm this configuration produced 210 mW of power in a diffraction-limited mode with two frequency components of narrow linewidth. The frequency difference delta was varied from 20 MHz to 12 GHz, while the power ratio of the two components was freely adjustable. For delta < 2 GHz additional frequency sidebands appear in the output of the MOPA. This configuration is a f lexible and simple high-power cw laser source for light with multiple narrow-linewidth frequency components. PMID:18071437

  1. Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress

    NASA Astrophysics Data System (ADS)

    Yao, Nan; Li, Wei; Zhao, Yihao; Zhong, Li; Liu, Suping; Ma, Xiaoyu

    2015-10-01

    High power semiconductor laser is widely used because of its high transformation efficiency, good working stability, compact volume and simple driving requirements. Laser's lifetime is very long, but tests at high levels of stress can speed up the failure process and shorten the times to failure significantly. So accelerated life test is used here for forecasting the lifetime of 808nm CW GaAs/AlGaAs high power semiconductor laser that has an output power of 1W under 1.04A. Accelerated life test of constant current stress based on the Inverse Power Law Relationship was designed. Tests were conducted under 1.3A, 1.6A and 1.9A at room temperature. It is the first time that this method is used in the domestic research of laser's lifetime prediction. Applying Weibull Distribution to describe the lifetime distribution and analyzing the data of times to failure, characteristics lifetime's functional relationship model with current is achieved. Then the characteristics lifetime under normal current is extrapolated, which is 9473h. Besides, to confirm the validity of the functional relationship model, we conduct an additional accelerated life test under 1.75A. Based on this experimental data we calculated the characteristics lifetime corresponding to 1.75A that is 171h, while the extrapolated characteristics lifetime from the former functional relationship model is 162h. The two results shows 5% deviation that is very low and acceptable, which indicates that the test design is reasonable and authentic.

  2. TECATE - a code for anisotropic thermoelasticity in high-average-power laser technology. Phase 1 final report

    SciTech Connect

    Gelinas, R.J.; Doss, S.K.; Carlson, N.N.

    1985-01-01

    This report describes a totally Eulerian code for anisotropic thermoelasticity (code name TECATE) which may be used in evaluations of prospective crystal media for high-average-power lasers. The present TECATE code version computes steady-state distributions of material temperatures, stresses, strains, and displacement fields in 2-D slab geometry. Numerous heat source and coolant boundary condition options are available in the TECATE code for laser design considerations. Anisotropic analogues of plane stress and plane strain evaluations can be executed for any and all crystal symmetry classes. As with all new and/or large physics codes, it is likely that some code imperfections will emerge at some point in time.

  3. Actively mode-locked Tm(3+)-doped silica fiber laser with wavelength-tunable, high average output power.

    PubMed

    Kneis, Christian; Donelan, Brenda; Berrou, Antoine; Manek-Hönninger, Inka; Robin, Thierry; Cadier, Benoît; Eichhorn, Marc; Kieleck, Christelle

    2015-04-01

    A diode-pumped, actively mode-locked high-power thulium (Tm3+)-doped double-clad silica fiber laser is demonstrated, providing an average output power in mode-locked (continuous wave) operation of 53 W (72 W) with a slope efficiency of 34% (38%). Mode-locking in the 6th-harmonic order was obtained by an acousto-optic modulator driven at 66 MHz without dispersion compensation. The shortest measured output pulse width was 200 ps. Owing to a diffraction grating as cavity end mirror, the central wavelength could be tuned from 1.95 to 2.13 μm. The measured beam quality in mode-locked and continuous wave operation has been close to the diffraction limit. PMID:25831360

  4. Actively mode-locked Tm(3+)-doped silica fiber laser with wavelength-tunable, high average output power.

    PubMed

    Kneis, Christian; Donelan, Brenda; Berrou, Antoine; Manek-Hönninger, Inka; Robin, Thierry; Cadier, Benoît; Eichhorn, Marc; Kieleck, Christelle

    2015-04-01

    A diode-pumped, actively mode-locked high-power thulium (Tm3+)-doped double-clad silica fiber laser is demonstrated, providing an average output power in mode-locked (continuous wave) operation of 53 W (72 W) with a slope efficiency of 34% (38%). Mode-locking in the 6th-harmonic order was obtained by an acousto-optic modulator driven at 66 MHz without dispersion compensation. The shortest measured output pulse width was 200 ps. Owing to a diffraction grating as cavity end mirror, the central wavelength could be tuned from 1.95 to 2.13 μm. The measured beam quality in mode-locked and continuous wave operation has been close to the diffraction limit.

  5. All solid-state spectral broadening: an average and peak power scalable method for compression of ultrashort pulses.

    PubMed

    Seidel, Marcus; Arisholm, Gunnar; Brons, Jonathan; Pervak, Vladimir; Pronin, Oleg

    2016-05-01

    Spectral broadening in bulk material is a simple, robust and low-cost method to extend the bandwidth of a laser source. Consequently, it enables ultrashort pulse compression. Experiments with a 38 MHz repetition rate, 50 W average power Kerr-lens mode-locked thin-disk oscillator were performed. The initially 1.2 μJ, 250 fs pulses are compressed to 43 fs by means of self-phase modulation in a single 15 mm thick quartz crystal and subsequent chirped-mirror compression. The losses due to spatial nonlinear effects are only about 40 %. A second broadening stage reduced the Fourier transform limit to 15 fs. It is shown that the intensity noise of the oscillator is preserved independent of the broadening factor. Simulations manifest the peak power scalability of the concept and show that it is applicable to a wide range of input pulse durations and energies.

  6. Relationship Between Selected Strength and Power Assessments to Peak and Average Velocity of the Drive Block in Offensive Line Play.

    PubMed

    Jacobson, Bert H; Conchola, Eric C; Smith, Doug B; Akehi, Kazuma; Glass, Rob G

    2016-08-01

    Jacobson, BH, Conchola, EC, Smith, DB, Akehi, K, and Glass, RG. Relationship between selected strength and power assessments to peak and average velocity of the drive block in offensive line play. J Strength Cond Res 30(8): 2202-2205, 2016-Typical strength training for football includes the squat and power clean (PC) and routinely measured variables include 1 repetition maximum (1RM) squat and 1RM PC along with the vertical jump (VJ) for power. However, little research exists regarding the association between the strength exercises and velocity of an actual on-the-field performance. The purpose of this study was to investigate the relationship of peak velocity (PV) and average velocity (AV) of the offensive line drive block to 1RM squat, 1RM PC, the VJ, body mass (BM), and body composition. One repetition maximum assessments for the squat and PC were recorded along with VJ height, BM, and percent body fat. These data were correlated with PV and AV while performing the drive block. Peal velocity and AV were assessed using a Tendo Power and Speed Analyzer as the linemen fired, from a 3-point stance into a stationary blocking dummy. Pearson product analysis yielded significant (p ≤ 0.05) correlations between PV and AV and the VJ, the squat, and the PC. A significant inverse association was found for both PV and AV and body fat. These data help to confirm that the typical exercises recommended for American football linemen is positively associated with both PV and AV needed for the drive block effectiveness. It is recommended that these exercises remain the focus of a weight room protocol and that ancillary exercises be built around these exercises. Additionally, efforts to reduce body fat are recommended.

  7. Study of the correlation parameters of the surface structure of disordered semiconductors by the two-dimensional DFA and average mutual information methods

    SciTech Connect

    Alpatov, A. V.; Vikhrov, S. P.; Rybina, N. V.

    2015-04-15

    The processes of self-organization of the surface structure of hydrogenated amorphous silicon are studied by the methods of fluctuation analysis and average mutual information on the basis of atomic-force-microscopy images of the surface. It is found that all of the structures can be characterized by a correlation vector and represented as a superposition of harmonic components and noise. It is shown that, under variations in the technological parameters of the production of a-Si:H films, the correlation properties of their structure vary as well. As the substrate temperature is increased, the formation of structural irregularities becomes less efficient; in this case, the length of the correlation vector and the degree of structural ordering increase. It is shown that the procedure based on the method of fluctuation analysis in combination with the method of average mutual information provides a means for studying the self-organization processes in any structures on different length scales.

  8. Wavelength and average power density dependency of the recrystallization of tooth dentin using a MIR-FEL

    NASA Astrophysics Data System (ADS)

    Heya, Manabu; Awazu, Kunio

    2002-04-01

    Recrystallization of tooth dentin by the application of mid- infrared (MIR) pulsed-laser irradiation is one candidate for a novel, non-invasive treatment for the prevention of tooth decay. Recrystallized dentin functions in a similar way to dental enamel. To recrystallize the dentin effectively and non-invasively it is essential to estimate quantitatively and qualitatively the laser parameters, such as the wavelength and the average power density, required for recrystallization. The laser-tissue interaction is initiated effectively by selective excitation of phosphate acid ions (PO4) in the dentin. Using a tunable, MIR Free Electron Laser (FEL) in the wavelength region of 8.8- 10.6micrometers , corresponding to intense absorption bands due to PO4 vibration modes, we have investigated macroscopically extent of surface modification of dentin, and we have obtained experimental results related to the ablation depth, the MIR absorption spectrum, and the elemental chemical composition. From these results, it was found that (1) the laser parameters at which efficient surface modification, without enhanced ablation effects, occurred were estimated to be approximately in the wavelength and average power density regions of ~9.4- 10.3micrometers and ~10-20 W/cm2, and that (2) in this region PO4 vibration modes with lower binding energy were preferentially excluded from the dentin.

  9. An efficient computational method for characterizing the effects of random surface errors on the average power pattern of reflectors

    NASA Technical Reports Server (NTRS)

    Rahmat-Samii, Y.

    1983-01-01

    Based on the works of Ruze (1966) and Vu (1969), a novel mathematical model has been developed to determine efficiently the average power pattern degradations caused by random surface errors. In this model, both nonuniform root mean square (rms) surface errors and nonuniform illumination functions are employed. In addition, the model incorporates the dependence on F/D in the construction of the solution. The mathematical foundation of the model rests on the assumption that in each prescribed annular region of the antenna, the geometrical rms surface value is known. It is shown that closed-form expressions can then be derived, which result in a very efficient computational method for the average power pattern. Detailed parametric studies are performed with these expressions to determine the effects of different random errors and illumination tapers on parameters such as gain loss and sidelobe levels. The results clearly demonstrate that as sidelobe levels decrease, their dependence on the surface rms/wavelength becomes much stronger and, for a specified tolerance level, a considerably smaller rms/wavelength is required to maintain the low sidelobes within the required bounds.

  10. A Study on Estimation of Average Power Output Fluctuation of Clustered Photovoltaic Power Generation Systems in Urban District of a Few km2

    NASA Astrophysics Data System (ADS)

    Kato, Takeyoshi; Suzuoki, Yasuo

    The fluctuation of the total power output of clustered PV systems would be smaller than that of single PV system because of the time difference in the power output fluctuation among PV systems at different locations. This effect, so called smoothing-effect, must be taken into account properly when the impact of clustered PV systems on electric power system is assessed. If the average power output of clustered PV systems can be estimated from the power output of single PV system, it is very useful and helpful for the impact assessment. In this study, we propose a simple method to estimate the total power output fluctuation of clustered PV systems. In the proposed method, a smoothing effect is assumed to be caused as a result of two factors, i.e. time difference of overhead clouds passing among PV systems and the random change in the size and/or shape of clouds. The first one is formulated as a low-pass filter, assuming that output fluctuation is transmitted to the same direction as the wind direction at the constant speed. The second one is taken into account by using a Fourier transform surrogate data. The parameters in the proposed method were selected, so that the estimated fluctuation can be similar with that of ensemble average fluctuation of data observed at 5 points used as a training data set. Then, by using the selected parameters, the fluctuation property was estimated for other data set. The results show that the proposed method is useful for estimating the total power output fluctuation of clustered PV systems.

  11. Duration-tunable picosecond source at 560  nm with watt-level average power.

    PubMed

    Runcorn, T H; Murray, R T; Kelleher, E J R; Popov, S V; Taylor, J R

    2015-07-01

    A pulse source at 560 nm that is tunable in duration between 50 ps and 2.7 ns with >1  W of average power and near diffraction-limited beam quality is demonstrated. The source is based on efficient (up to 50%) second-harmonic generation in a periodically poled lithium tantalate crystal of a linearly polarized fiber-integrated Raman amplifier operating at 1120 nm. A duration-tunable ytterbium master-oscillator power-fiber amplifier is used to pulse-pump the Raman amplifier, which is seeded by a continuous-wave distributed-feedback laser diode at 1120 nm. The performance of the system using two different master oscillator schemes is compared. A pulse energy of up to 765 nJ is achieved with a conversion efficiency of 25% from the ytterbium fiber pump, demonstrating a compact and turn-key architecture for obtaining high peak-power radiation at 560 nm. PMID:26125373

  12. Process optimization in high-average-power ultrashort pulse laser microfabrication: how laser process parameters influence efficiency, throughput and quality

    NASA Astrophysics Data System (ADS)

    Schille, Joerg; Schneider, Lutz; Loeschner, Udo

    2015-09-01

    In this paper, laser processing of technical grade stainless steel and copper using high-average-power ultrashort pulse lasers is studied in order to gain deeper insight into material removal for microfabrication. A high-pulse repetition frequency picosecond and femtosecond laser is used in conjunction with high-performance galvanometer scanners and an in-house developed two-axis polygon scanner system. By varying the processing parameters such as wavelength, pulse length, fluence and repetition rate, cavities of standardized geometry are fabricated and analyzed. From the depths of the cavities produced, the ablation rate and removal efficiency are estimated. In addition, the quality of the cavities is evaluated by means of scanning electron microscope micrographs or rather surface roughness measurements. From the results obtained, the influence of the machining parameters on material removal and machining quality is discussed. In addition, it is shown that both material removal rate and quality increase by using femtosecond compared to picosecond laser pulses. On stainless steel, a maximum throughput of 6.81 mm3/min is achieved with 32 W femtosecond laser powers; if using 187 W picosecond laser powers, the maximum is 15.04 mm3/min, respectively. On copper, the maximum throughputs are 6.1 mm3/min and 21.4 mm3/min, obtained with 32 W femtosecond and 187 W picosecond laser powers. The findings indicate that ultrashort pulses in the mid-fluence regime yield most efficient material removal. In conclusion, from the results of this analysis, a range of optimum processing parameters are derived feasible to enhance machining efficiency, throughput and quality in high-rate micromachining. The work carried out here clearly opens the way to significant industrial applications.

  13. Bayesian Network Model with Application to Smart Power Semiconductor Lifetime Data.

    PubMed

    Plankensteiner, Kathrin; Bluder, Olivia; Pilz, Jürgen

    2015-09-01

    In this article, Bayesian networks are used to model semiconductor lifetime data obtained from a cyclic stress test system. The data of interest are a mixture of log-normal distributions, representing two dominant physical failure mechanisms. Moreover, the data can be censored due to limited test resources. For a better understanding of the complex lifetime behavior, interactions between test settings, geometric designs, material properties, and physical parameters of the semiconductor device are modeled by a Bayesian network. Statistical toolboxes in MATLAB® have been extended and applied to find the best structure of the Bayesian network and to perform parameter learning. Due to censored observations Markov chain Monte Carlo (MCMC) simulations are employed to determine the posterior distributions. For model selection the automatic relevance determination (ARD) algorithm and goodness-of-fit criteria such as marginal likelihoods, Bayes factors, posterior predictive density distributions, and sum of squared errors of prediction (SSEP) are applied and evaluated. The results indicate that the application of Bayesian networks to semiconductor reliability provides useful information about the interactions between the significant covariates and serves as a reliable alternative to currently applied methods.

  14. A high-average power tapered FEL amplifier at submillimeter frequencies using sheet electron beams and short-period wigglers

    SciTech Connect

    Bidwell, S.W.; Radack, D.J.; Antonsen, T.M. Jr.; Booske, J.H.; Carmel, Y.; Destler, W.W.; Granatstein, V.L.; Levush, B.; Latham, P.E.; Zhang, Z.X.

    1990-01-01

    A high-average-power FEL amplifier operating at submillimeter frequencies is under development at the University of Maryland. Program goals are to produce a CW, {approximately}1 MW, FEL amplifier source at frequencies between 280 GHz and 560 GHz. To this end, a high-gain, high-efficiency, tapered FEL amplifier using a sheet electron beam and a short-period (superconducting) wiggler has been chosen. Development of this amplifier is progressing in three stages: (1) beam propagation through a long length ({approximately}1 m) of short period ({lambda}{sub {omega}} = 1 cm) wiggler, (2) demonstration of a proof-of-principle amplifier experiment at 98 GHz, and (3) designs of a superconducting tapered FEL amplifier meeting the ultimate design goal specifications. 17 refs., 1 fig., 1 tab.

  15. Design and development of a 6 MW peak, 24 kW average power S-band klystron

    SciTech Connect

    Joshi, L.M.; Meena, Rakesh; Nangru, Subhash; Kant, Deepender; Pal, Debashis; Lamba, O.S.; Jindal, Vishnu; Jangid, Sushil Kumar; Chakravarthy, D.P.; Dixit, Kavita

    2011-07-01

    A 6 MW peak, 24 kW average power S-band Klystron is under development at CEERI, Pilani under an MoU between BARC and CEERI. The design of the klystron has been completed. The electron gun has been designed using TRAK and MAGIC codes. RF cavities have been designed using HFSS and CST Microwave Studio while the complete beam wave interaction simulation has been done using MAGIC code. The thermal design of collector and RF window has been done using ANSYS code. A Gun Collector Test Module (GCTM) was developed before making actual klystron to validate gun perveance and thermal design of collector. A high voltage solid state pulsed modulator has been installed for performance valuation of the tube. The paper will cover the design aspects of the tube and experimental test results of GCTM and klystron. (author)

  16. High-average-power femtosecond pulse generation in the blue using BiB3O6

    NASA Astrophysics Data System (ADS)

    Ghotbi, M.; Ebrahim-Zadeh, M.; Majchrowski, A.; Michalski, E.; Kityk, I. V.

    2004-11-01

    Efficient generation of tunable femtosecond pulses in the blue is reported in the nonlinear crystal BiB3O6. By use of fundamental pulses from a mode-locked Ti:sapphire laser at 76 MHz, single-pass second-harmonic average powers of as much as 830 mW have been generated at 50% conversion efficiency, and a tunable range of 375-435 nm in the blue is demonstrated. Temporal measurements using cross correlation of the fundamental and second-harmonic pulses in a 100-µm-thick ß-BaB2O4 crystal result in blue pulse durations of 220 fs for 130-fs fundamental pulses. Direct experimental comparison with ß-BaB2O4 confirms the superior performance BiB3O6 for second-harmonic generation of femtosecond pulses.

  17. [Study on packaging-induced stress in 4 mm cavity length high-power single emitter semiconductor laser].

    PubMed

    Zhang, Yong; Yang, Rui-xia; An, Zhen-feng; Xu, Hui-wu

    2014-06-01

    To reduce packaging-induced stress of long cavity length high-power single emitter semiconductor laser, the relationship between the stress and the wavelength shift was deduced on the basis of the theory that the stress can change the band gap. A method was developed for quantitatively calculating the stress by measuring the emission spectrum of the laser under pulse conditions. The results show that the soldering quality is a critical factor affecting thermal stress. The difference in stress can exceed 300 MPa due to the difference in soldering quality. By optimizing the reflowing soldering curve of the laser, the stress of the laser drops from 129.7 to 53.4 MPa. This method can also effectively solve the problem that the stress varies with storage time. This work demonstrates that the measurement and analysis of the emission spectrum of the laser can provide a useful method to study packaging stress of the high-power single emitter semiconductor laser. It is also an available means to evaluate and analyze soldering quality. PMID:25358141

  18. SEMICONDUCTOR DEVICES: Large signal RF power transmission characterization of InGaP HBT for RF power amplifiers

    NASA Astrophysics Data System (ADS)

    Lixin, Zhao; Zhi, Jin; Xinyu, Liu

    2010-01-01

    The large signal RF power transmission characteristics of an advanced InGaP HBT in an RF power amplifier are investigated and analyzed experimentally. The realistic RF powers reflected by the transistor, transmitted from the transistor and reflected by the load are investigated at small signal and large signal levels. The RF power multiple frequency components at the input and output ports are investigated at small signal and large signal levels, including their effects on RF power gain compression and nonlinearity. The results show that the RF power reflections are different between the output and input ports. At the input port the reflected power is not always proportional to input power level; at large power levels the reflected power becomes more serious than that at small signal levels, and there is a knee point at large power levels. The results also show the effects of the power multiple frequency components on RF amplification.

  19. Method to improve the noise figure and saturation power in multi-contact semiconductor optical amplifiers: simulation and experiment.

    PubMed

    Carney, Kevin; Lennox, Robert; Maldonado-Basilio, Ramon; Philippe, Severine; Surre, Frederic; Bradley, Louise; Landais, Pascal

    2013-03-25

    The consequences of tailoring the longitudinal carrier density along the active layer of a multi-contact bulk semiconductor optical amplifier (SOA) are investigated using a rate equation model. It is shown that both the noise figure and output power saturation can be optimized for a fixed total injected bias current. The simulation results are validated by comparison with experiment using a multi-contact SOA. The inter-contact resistance is increased using a focused ion beam in order to optimize the carrier density control. A chip noise figure of 3.8 dB and a saturation output power of 9 dBm are measured experimentally for a total bias current of 150 mA.

  20. High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

    NASA Technical Reports Server (NTRS)

    Connolly, J. C.; Carlin, D. B.; Ettenberg, M.

    1989-01-01

    A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

  1. High-power ({gt}0.9 W cw) diffraction-limited semiconductor laser based on a fiber Bragg grating external cavity

    SciTech Connect

    Cornwell, D.M. , Jr.; Thomas, H.J.

    1997-02-01

    We have developed a high-power ({gt}0.9 W cw) diffraction-limited semiconductor laser based on a tapered semiconductor optical amplifier using a fiber Bragg grating in an external cavity configuration. Frequency-selective feedback from the fiber grating is injected into the amplifier via direct butt coupling through a single mode fiber, resulting in a spectrally stable and narrow ({lt}0.3 nm) high-power laser for solid-state laser pumping, laser remote sensing, and optical communications. {copyright} {ital 1997 American Institute of Physics.}

  2. High-average-power 2 μm few-cycle optical parametric chirped pulse amplifier at 100 kHz repetition rate.

    PubMed

    Shamir, Yariv; Rothhardt, Jan; Hädrich, Steffen; Demmler, Stefan; Tschernajew, Maxim; Limpert, Jens; Tünnermann, Andreas

    2015-12-01

    Sources of long wavelengths few-cycle high repetition rate pulses are becoming increasingly important for a plethora of applications, e.g., in high-field physics. Here, we report on the realization of a tunable optical parametric chirped pulse amplifier at 100 kHz repetition rate. At a central wavelength of 2 μm, the system delivered 33 fs pulses and a 6 W average power corresponding to 60 μJ pulse energy with gigawatt-level peak powers. Idler absorption and its crystal heating is experimentally investigated for a BBO. Strategies for further power scaling to several tens of watts of average power are discussed.

  3. High-average-power 2 μm few-cycle optical parametric chirped pulse amplifier at 100 kHz repetition rate.

    PubMed

    Shamir, Yariv; Rothhardt, Jan; Hädrich, Steffen; Demmler, Stefan; Tschernajew, Maxim; Limpert, Jens; Tünnermann, Andreas

    2015-12-01

    Sources of long wavelengths few-cycle high repetition rate pulses are becoming increasingly important for a plethora of applications, e.g., in high-field physics. Here, we report on the realization of a tunable optical parametric chirped pulse amplifier at 100 kHz repetition rate. At a central wavelength of 2 μm, the system delivered 33 fs pulses and a 6 W average power corresponding to 60 μJ pulse energy with gigawatt-level peak powers. Idler absorption and its crystal heating is experimentally investigated for a BBO. Strategies for further power scaling to several tens of watts of average power are discussed. PMID:26625047

  4. Improvement of deoxidization efficiency of nitric monoxide by shortening pulse width of semiconductor opening switch pulse power generator

    NASA Astrophysics Data System (ADS)

    Kakuta, Takatoshi; Yagi, Ippei; Takaki, Koichi

    2015-01-01

    The deoxidization efficiency of nitric monoxide (NO) was improved by shortening the pulse width of the voltage applied to a corona reactor. The deoxidization efficiency of NO was evaluated as the NO removal efficiency in nitrogen (N2) gas containing 200 ppm NO. The corona reactor had a coaxial geometry and consisted of center high-voltage wire and outer grounded cylinder electrodes. A nanosecond high-voltage pulse was generated using an inductive energy storage pulse power circuit with a semiconductor opening switch and was applied to the center wire electrode in the corona reactor. Fast recovery diodes were utilized as a semiconductor opening switch. The pulse width of the applied voltage was reduced from 21 to 14 ns with the arrester connected in parallel to the reactor. The energy efficiency for NO removal was improved from 8.2 to 35.7 g kW-1 h-1 with the arrester connected. The pulse width was also reduced to 8 ns by optimizing the circuit parameters. It was confirmed from observation with an intensified charge-coupled device (ICCD) camera that the streamer corona discharge transited to a glowlike discharge after the streamer propagated from the center wire electrode to the outer cylinder electrode. The duration of the glowlike phase was reduced with the arrester connected. The energy consumed in the glowlike phase was also reduced from 15.7 to 4.6 mJ with the arrester connected.

  5. Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier.

    PubMed

    Chi, Mingjun; Jensen, Ole Bjarlin; Holm, Jesper; Pedersen, Christian; Andersen, Peter Eskil; Erbert, Götz; Sumpf, Bernd; Petersen, Paul Michael

    2005-12-26

    A high-power narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The external cavity laser system uses a new tapered amplifier with a super-large optical-cavity (SLOC) design that leads to improved performance of the external cavity diode lasers. The laser system is tunable over a 29 nm range centered at 802 nm. As high as 1.95 W output power is obtained at 803.84 nm, and an output power above 1.5 W is achieved from 793 to 812 nm at operating current of 3.0 A. The emission linewidth is below 0.004 nm and the beam quality factor M2 is below 1.3 over the 29 nm tunable range. As an example of application, the laser system is used as a pump source for the generation of 405 nm blue light by single-pass frequency doubling in a periodically poled KTiOPO4. An output power of 24 mW at 405 nm, corresponding to a conversion efficiency of 0.83%/W is attained. PMID:19503273

  6. A novel power spectrum calculation method using phase-compensation and weighted averaging for the estimation of ultrasound attenuation.

    PubMed

    Heo, Seo Weon; Kim, Hyungsuk

    2010-05-01

    An estimation of ultrasound attenuation in soft tissues is critical in the quantitative ultrasound analysis since it is not only related to the estimations of other ultrasound parameters, such as speed of sound, integrated scatterers, or scatterer size, but also provides pathological information of the scanned tissue. However, estimation performances of ultrasound attenuation are intimately tied to the accurate extraction of spectral information from the backscattered radiofrequency (RF) signals. In this paper, we propose two novel techniques for calculating a block power spectrum from the backscattered ultrasound signals. These are based on the phase-compensation of each RF segment using the normalized cross-correlation to minimize estimation errors due to phase variations, and the weighted averaging technique to maximize the signal-to-noise ratio (SNR). The simulation results with uniform numerical phantoms demonstrate that the proposed method estimates local attenuation coefficients within 1.57% of the actual values while the conventional methods estimate those within 2.96%. The proposed method is especially effective when we deal with the signal reflected from the deeper depth where the SNR level is lower or when the gated window contains a small number of signal samples. Experimental results, performed at 5MHz, were obtained with a one-dimensional 128 elements array, using the tissue-mimicking phantoms also show that the proposed method provides better estimation results (within 3.04% of the actual value) with smaller estimation variances compared to the conventional methods (within 5.93%) for all cases considered.

  7. Experimental assessment of blade tip immersion depth from free surface on average power and thrust coefficients of marine current turbine

    NASA Astrophysics Data System (ADS)

    Lust, Ethan; Flack, Karen; Luznik, Luksa

    2014-11-01

    Results from an experimental study on the effects of marine current turbine immersion depth from the free surface are presented. Measurements are performed with a 1/25 scale (diameter D = 0.8m) two bladed horizontal axis turbine towed in the large towing tank at the U.S. Naval Academy. Thrust and torque are measured using a dynamometer, mounted in line with the turbine shaft. Shaft rotation speed and blade position are measured using a shaft position indexing system. The tip speed ratio (TSR) is adjusted using a hysteresis brake which is attached to the output shaft. Two optical wave height sensors are used to measure the free surface elevation. The turbine is towed at 1.68 m/s, resulting in a 70% chord based Rec = 4 × 105. An Acoustic Doppler Velocimeter (ADV) is installed one turbine diameter upstream of the turbine rotation plane to characterize the inflow turbulence. Measurements are obtained at four relative blade tip immersion depths of z/D = 0.5, 0.4, 0.3, and 0.2 at a TSR value of 7 to identify the depth where free surface effects impact overall turbine performance. The overall average power and thrust coefficient are presented and compared to previously conducted baseline tests. The influence of wake expansion blockage on the turbine performance due to presence of the free surface at these immersion depths will also be discussed.

  8. Optimization of x-ray sources for proximity lithography produced by a high average power Nd:glass laser

    SciTech Connect

    Celliers, P.; DaSilva, L.B.; Dane, C.B.

    1995-07-01

    We measured the conversion efficiency of laser pulse energy into x-rays from a variety of solid planar targets and a Xe gas puff target irradiated using a high average power Nd:glass slab laser capable of delivering 13 ns FWHM pulses at up to 20 J at 1.053 {mu}m and 12 J at 0.53 {mu}m. Targets where chosen to optimize emission in the 9-19 {Angstrom} wavelength band, including L-shell emission from materials with atomic numbers in the Z=24-30 and M-shell emission from Xe (Z=54). With 1.053 {mu}m a maximum conversion of 10% into 2{pi} sr was measured from solid Xe and type 302 stainless steel targets. At 0.527 {mu}m efficiencies of 12-18%/(2{pi} sr) were measured for all of the solid targets in the same wavelength band. The x-ray conversion efficiency from the Xe gas puff target was considerably lower, at about 3%/(2{pi} sr) when irradiated with 1.053 {mu}m.

  9. Description and interpretation of the bracts epidermis of Gramineae (Poaceae) with rotated image with maximum average power spectrum (RIMAPS) technique.

    PubMed

    Favret, Eduardo A; Fuentes, Néstor O; Molina, Ana M; Setten, Lorena M

    2008-10-01

    During the last few years, RIMAPS technique has been used to characterize the micro-relief of metallic surfaces and recently also applied to biological surfaces. RIMAPS is an image analysis technique which uses the rotation of an image and calculates its average power spectrum. Here, it is presented as a tool for describing the morphology of the trichodium net found in some grasses, which is developed on the epidermal cells of the lemma. Three different species of grasses (herbarium samples) are analyzed: Podagrostis aequivalvis (Trin.) Scribn. & Merr., Bromidium hygrometricum (Nees) Nees & Meyen and Bromidium ramboi (Parodi) Rúgolo. Simple schemes representing the real microstructure of the lemma are proposed and studied. RIMAPS spectra of both the schemes and the real microstructures are compared. These results allow inferring how similar the proposed geometrical schemes are to the real microstructures. Each geometrical pattern could be used as a reference for classifying other species. Finally, this kind of analysis is used to determine the morphology of the trichodium net of Agrostis breviculmis Hitchc. As the dried sample had shrunk and the microstructure was not clear, two kinds of morphology are proposed for the trichodium net of Agrostis L., one elliptical and the other rectilinear, the former being the most suitable.

  10. Description and interpretation of the bracts epidermis of Gramineae (Poaceae) with rotated image with maximum average power spectrum (RIMAPS) technique.

    PubMed

    Favret, Eduardo A; Fuentes, Néstor O; Molina, Ana M; Setten, Lorena M

    2008-10-01

    During the last few years, RIMAPS technique has been used to characterize the micro-relief of metallic surfaces and recently also applied to biological surfaces. RIMAPS is an image analysis technique which uses the rotation of an image and calculates its average power spectrum. Here, it is presented as a tool for describing the morphology of the trichodium net found in some grasses, which is developed on the epidermal cells of the lemma. Three different species of grasses (herbarium samples) are analyzed: Podagrostis aequivalvis (Trin.) Scribn. & Merr., Bromidium hygrometricum (Nees) Nees & Meyen and Bromidium ramboi (Parodi) Rúgolo. Simple schemes representing the real microstructure of the lemma are proposed and studied. RIMAPS spectra of both the schemes and the real microstructures are compared. These results allow inferring how similar the proposed geometrical schemes are to the real microstructures. Each geometrical pattern could be used as a reference for classifying other species. Finally, this kind of analysis is used to determine the morphology of the trichodium net of Agrostis breviculmis Hitchc. As the dried sample had shrunk and the microstructure was not clear, two kinds of morphology are proposed for the trichodium net of Agrostis L., one elliptical and the other rectilinear, the former being the most suitable. PMID:18042391

  11. A pure permanent magnet-two plane focusing-tapered wiggler for a high average power FEL

    SciTech Connect

    Fortgang, C.M.

    1996-11-01

    A high-average power FEL is under construction at Los Alamos. The FEL will have aspects of both an oscillator and a SASE (self-amplified spontaneous emission) device. That is, a high-gain and high- extraction efficiency wiggler will be used with a very low-Q optical resonator. FEL simulations reveal that a tapered wiggler with two- plane focusing is required to obtain desired performance. The wiggler is comprised of a I meter long untapered section followed by a 1 meter tapered section. The taper is achieved with the magnetic gap and not the wiggler period which is constant at 2 cm. The gap is tapered from 5.9 mm to 8.8 mm. The, gap, rather than the period, is tapered to avoid vignetting of the 16 {mu}m optical beam. Two-plane focusing is necessary to maintain high current density and thus high gain through out the 2 meter long wiggler. Several magnetic designs have been considered for the wiggler. The leading candidate approach is a pure permanent wiggler with pole faces that are cut to roughly approximate the classical parabolic pole face design. Focusing is provided by the sextupole component of the wiggler magnetic field and is often called ``natural`` or ``betatron`` focusing. Details of the design will be presented.

  12. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  13. The Power of Materials Science Tools for Gaining Insights into Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Treat, Neil D.; Westacott, Paul; Stingelin, Natalie

    2015-07-01

    The structure of organic semiconductors can be complex because features from the molecular level (such as molecular conformation) to the micrometer scale (such as the volume fraction and composition of phases, phase distribution, and domain size) contribute to the definition of the optoelectronic landscape of the final architectures and, hence, to device performance. As a consequence, a detailed understanding of how to manipulate molecular ordering, e.g., through knowledge of relevant phase transitions, of the solidification process, of relevant solidification mechanisms, and of kinetic factors, is required to induce the desired optoelectronic response. In this review, we discuss relevant structural features of single-component and multicomponent systems; provide a case study of the multifaceted structure that polymer:fullerene systems can adopt; and highlight relevant solidification mechanisms such as nucleation and growth, liquid-liquid phase separation, and spinodal decomposition. In addition, cocrystal formation, solid solutions, and eutectic systems are treated and their relevance within the optoelectronic area emphasized.

  14. High-order diffraction gratings for high-power semiconductor lasers

    SciTech Connect

    Vasil'eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N. Shashkin, I. S.; Tarasov, I. S.

    2012-02-15

    A deep diffraction grating with a large period ({approx}2 {mu}m) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating {approx}2 {mu}m deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al{sub 0.3}Ga{sub 0.7}As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

  15. Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Hietala, V.M.; Sloan, L.R.

    1999-02-18

    The power consumption of Radio Frequency (RF) electronics is a significant issue for Wireless systems. Since most wireless systems are portable and thus battery operated, reductions in DC power consumption can significantly reduce the weight and/or increase the battery lifetime of the system. As transmission consumes significantly more power than reception for most Wireless applications, previous efforts have been focused on increasing the efficiency of RF power amplification. These efforts have resulted in large increases in transmit efficiencies with research-grade amplifier efficiencies approaching 100%. In this paper, they describe their efforts on reducing power consumption of reception and other small signal RF functions. Additionally, recent power efficiency measurements on InP HEMT devices for transmission are presented. This work focuses on the needs of today's typical portable Wireless systems, which operate at frequencies up to several GHz.

  16. Octave-spanning OPCPA system delivering CEP-stable few-cycle pulses and 22 W of average power at 1 MHz repetition rate.

    PubMed

    Rothhardt, Jan; Demmler, Stefan; Hädrich, Steffen; Limpert, Jens; Tünnermann, Andreas

    2012-05-01

    We report on an OPCPA system delivering CEP-stable pulses with a pulse duration of only 1.7 optical cycles at 880 nm wavelength. This pulse duration is achieved by the generation, optical parametric amplification and compression of a full optical octave of bandwidth. The system is pumped by a high average power Yb-fiber laser system, which allows for operation of the OPCPA at up to 1 MHz repetition rate and 22 W of average output power. Further scaling towards single-cycle pulses, higher energy and output power is discussed. PMID:22565712

  17. Generation of more than 40  W of average output power from a passively Q-switched Yb-doped fiber laser.

    PubMed

    Chakravarty, Usha; Kuruvilla, Antony; Singh, Ravindra; Upadhyaya, B N; Bindra, K S; Oak, S M

    2016-01-10

    We report on the generation of 41.6 W of average output power from a passively Q-switched ytterbium-doped fiber laser using Cr4+:YAG crystal as a saturable absorber (SA). This is the highest average power from passively Q-switched fiber lasers reported so far in the literature, to our knowledge, and it has been achieved by using a specially designed T-type double-end pumping configuration. Variation in average output power, pulse energy, pulse duration, pulse frequency, and pulse-to-pulse stability has also been studied using SAs of different linear transmissions. The effect of an intracavity SA on self-pulsing dynamics was also investigated and it was observed that, at lower input pump power near threshold, the presence of an SA enhances the peak power of relaxation oscillations to trigger the generation of stimulated Raman scattering in the gain fiber. With an increase in pump power, when the passive Q-switching threshold is reached, high peak power random self-pulses regenerate into low amplitude regular Q-switched pulses. The effect of the length of the gain medium on dual-wavelength generation at very low input pump power and broadband generation at sufficiently higher pump power has also been explored. PMID:26835764

  18. Optimal design of semiconductor opening switches for use in the inductive stage of high power pulse generators

    NASA Astrophysics Data System (ADS)

    Engelko, A.; Bluhm, H.

    2004-05-01

    Semiconductor opening switches (SOS) are able to interrupt currents at density levels of up to 10 kA/cm2 in less than 10 ns, operate at repetition rates up to 1 kHz, and possess lifetimes of more than 1011 pulses. If stacked, SOS diodes can hold off voltage levels up to several 100 kV. They are therefore ideal for the design of compact high voltage pulse generators of the GW-class for industrial applications. The aim of this work was to improve our understanding of the opening process in a semiconductor diode of SOS-type with a doping profile of p+pnn+ structure, obtainable through diffusion from the surfaces. To simulate the physical processes inside this diode the code POSEOSS was developed. It contains a detailed physical model of charge carrier transport under the influence of density gradients and electric fields and considers all relevant generation and recombination processes. It possesses a large degree of flexibility and is easy to use, and thus allows to carry out parameter studies to determine the influence of different physical quantities, such as doping and impurity levels, on the performance of the device. When applying the code some interesting results concerning the plasma dynamics during the opening process in the switch have been found. In particular, using realistic values for the charge carrier mobility, it was found that the opening process starts first at the n-n+ boundary. Also it has been possible to derive the physical conditions for the occurrence of the SOS-effect. Based on the simulation results a simplified SOS equivalent circuit model has been developed. This model can be used in the circuit simulation program PSPICE. A pulse generator scheme based on inductive storage is proposed, in which power multiplication is achieved by unloading the inductors, previously charged in series, in parallel. This scheme can be considered as the inductive equivalent of a Marx-generator. PSPICE simulations of such a scheme based on semiconductor opening

  19. Efficient spectral broadening in the 100-W average power regime using gas-filled kagome HC-PCF and pulse compression.

    PubMed

    Emaury, Florian; Saraceno, Clara J; Debord, Benoit; Ghosh, Debashri; Diebold, Andreas; Gèrôme, Frederic; Südmeyer, Thomas; Benabid, Fetah; Keller, Ursula

    2014-12-15

    We present nonlinear pulse compression of a high-power SESAM-modelocked thin-disk laser (TDL) using an Ar-filled hypocycloid-core kagome hollow-core photonic crystal fiber (HC-PCF). The output of the modelocked Yb:YAG TDL with 127 W average power, a pulse repetition rate of 7 MHz, and a pulse duration of 740 fs was spectrally broadened 16-fold while propagating in a kagome HC-PCF containing 13 bar of static argon gas. Subsequent compression tests performed using 8.4% of the full available power resulted in a pulse duration as short as 88 fs using the spectrally broadened output from the fiber. Compressing the full transmitted power through the fiber (118 W) could lead to a compressed output of >100  W of average power and >100  MW of peak power with an average power compression efficiency of 88%. This simple laser system with only one ultrafast laser oscillator and a simple single-pass fiber pulse compressor, generating both high peak power >100  MW and sub-100-fs pulses at megahertz repetition rate, is very interesting for many applications such as high harmonic generation and attosecond science with improved signal-to-noise performance.

  20. Low-dimensional transport and large thermoelectric power factors in bulk semiconductors by band engineering of highly directional electronic states.

    PubMed

    Bilc, Daniel I; Hautier, Geoffroy; Waroquiers, David; Rignanese, Gian-Marco; Ghosez, Philippe

    2015-04-01

    Thermoelectrics are promising for addressing energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures and the introduction of resonant states were suggested as possible solutions to this paradox, but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly directional character of some orbitals to engineer the band structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principle calculations, the theoretical concept is demonstrated in Fe2YZ Heusler compounds, yielding power factors 4 to 5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting, or photovoltaic applications. PMID:25884131

  1. Low-dimensional transport and large thermoelectric power factors in bulk semiconductors by band engineering of highly directional electronic states.

    PubMed

    Bilc, Daniel I; Hautier, Geoffroy; Waroquiers, David; Rignanese, Gian-Marco; Ghosez, Philippe

    2015-04-01

    Thermoelectrics are promising for addressing energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures and the introduction of resonant states were suggested as possible solutions to this paradox, but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly directional character of some orbitals to engineer the band structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principle calculations, the theoretical concept is demonstrated in Fe2YZ Heusler compounds, yielding power factors 4 to 5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting, or photovoltaic applications.

  2. Development and fabrication of improved power transistor switches. [fabrication and manufacturing of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Hower, P. L.; Chu, C. K.

    1976-01-01

    A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

  3. Nuclear Science Symposium, 23rd, Scintillation and Semiconductor Counter Symposium, 15th, and Nuclear Power Systems Symposium, 8th, New Orleans, La., October 20-22, 1976, Proceedings

    NASA Technical Reports Server (NTRS)

    Wagner, L. J.

    1977-01-01

    The volume includes papers on semiconductor radiation detectors of various types, components of radiation detection and dosimetric systems, digital and microprocessor equipment in nuclear industry and science, and a wide variety of applications of nuclear radiation detectors. Semiconductor detectors of X-rays, gamma radiation, heavy ions, neutrons, and other nuclear particles, plastic scintillator arrays, drift chambers, spark wire chambers, and radiation dosimeter systems are reported on. Digital and analog conversion systems, digital data and control systems, microprocessors, and their uses in scientific research and nuclear power plants are discussed. Large-area imaging and biomedical nucleonic instrumentation, nuclear power plant safeguards, reactor instrumentation, nuclear power plant instrumentation, space instrumentation, and environmental instrumentation are dealt with. Individual items are announced in this issue.

  4. Single Event Effects (SEE) for Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie

    2011-01-01

    Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide.

  5. Radiation and Magnetic Field Effects on New Semiconductor Power Devices for Hl-Lhc Experiments

    NASA Astrophysics Data System (ADS)

    Fiore, S.; Abbate, C.; Baccaro, S.; Busatto, G.; Citterio, M.; Iannuzzo, F.; Lanza, A.; Latorre, S.; Lazzaroni, M.; Sanseverino, A.; Velardi, F.

    2014-06-01

    The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under γ, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operation under magnetic field.

  6. Quaternion Averaging

    NASA Technical Reports Server (NTRS)

    Markley, F. Landis; Cheng, Yang; Crassidis, John L.; Oshman, Yaakov

    2007-01-01

    Many applications require an algorithm that averages quaternions in an optimal manner. For example, when combining the quaternion outputs of multiple star trackers having this output capability, it is desirable to properly average the quaternions without recomputing the attitude from the the raw star tracker data. Other applications requiring some sort of optimal quaternion averaging include particle filtering and multiple-model adaptive estimation, where weighted quaternions are used to determine the quaternion estimate. For spacecraft attitude estimation applications, derives an optimal averaging scheme to compute the average of a set of weighted attitude matrices using the singular value decomposition method. Focusing on a 4-dimensional quaternion Gaussian distribution on the unit hypersphere, provides an approach to computing the average quaternion by minimizing a quaternion cost function that is equivalent to the attitude matrix cost function Motivated by and extending its results, this Note derives an algorithm that deterniines an optimal average quaternion from a set of scalar- or matrix-weighted quaternions. Rirthermore, a sufficient condition for the uniqueness of the average quaternion, and the equivalence of the mininiization problem, stated herein, to maximum likelihood estimation, are shown.

  7. High-average-power Nd:YAG planar waveguide laser that is face pumped by 10 laser diode bars.

    PubMed

    Lee, J R; Baker, H J; Friel, G J; Hilton, G J; Hall, D R

    2002-04-01

    A planar waveguide Nd:YAG laser is pumped with 430 W of power from 10 laser diode bars to produce a multimode output power of 150 W at an optical efficiency of 35%. Use of a hybrid resonator of the positive-branch confocal unstable type for the lateral axis and of one of the near-case I waveguide type for the transverse axis increased the laser brightness by a factor of ~26 with only 12% less power than in the multimode case. PMID:18007853

  8. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply

    NASA Astrophysics Data System (ADS)

    Hao, Hu; Xingbi, Chen

    2010-09-01

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  9. Difference-frequency mixing in AgGaS(2) by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm.

    PubMed

    Simon, U; Tittel, F K; Goldberg, L

    1993-11-15

    As much as 47 microW of cw infrared radiation and 89 microW of pulsed infrared radiation, tunable near 4.3 microm, have been generated by mixing the outputs of a high-power tapered semiconductor amplifier at 858 nm (signal wave) and a Ti:Al(2)O(3) laser at 715 nm (pump wave) in AgGaS(2). The GaAlAs tapered traveling-wave amplifier delivered as much as 1.5 W of diffraction-limited cw power into the nonlinear crystal. Output powers, conversion efficiencies, and spectral characteristics of this novel midinfrared source are discussed. PMID:19829451

  10. Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

    NASA Astrophysics Data System (ADS)

    Walker, A. W.; Heckelmann, S.; Karcher, C.; Höhn, O.; Went, C.; Niemeyer, M.; Bett, A. W.; Lackner, D.

    2016-04-01

    A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2-3 × 1017 cm-3) for an injected excess carrier concentration below 4 × 1012 cm-3. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

  11. High-frequency performances of superjunction laterally diffused metal-oxide-semiconductor transistors for RF power applications

    NASA Astrophysics Data System (ADS)

    Chen, Bo-Yuan; Chen, Kun-Ming; Chiu, Chia-Sung; Huang, Guo-Wei; Chang, Edward Yi

    2016-04-01

    This paper presents the dc and high-frequency performances of laterally diffused metal-oxide-semiconductor (LDMOS) transistors with superjunction (SJ) structures. The SJ-LDMOS transistors were fabricated using a 0.5-µm CMOS process. By utilizing a modified SJ/RESURF layout (Type I) or a tapered SJ layout (Type II) in our devices, better high-frequency performances and higher breakdown voltages are achieved compared with conventional SJ counterpart, owing to the suppression of the substrate-assisted depletion effect and the reduction of the drain resistance. For Type I device with an optimal SJ layout dimension, the cutoff frequency and the breakdown voltage are 3.7 GHz and 68 V, respectively. For Type II device with a smallest p-pillar width near the drain, they can be enhanced further and reach to 4.9 GHz and 83 V. These experimental results suggest that the SJ-LDMOS can be used in the RF power amplifiers.

  12. SEMICONDUCTOR DEVICES: A new integrated SOI power device based on self-isolation technology

    NASA Astrophysics Data System (ADS)

    Huanmei, Gao; Xiaorong, Luo; Wei, Zhang; Hao, Deng; Tianfei, Lei

    2010-08-01

    A new SOI LDMOS structure with buried n-islands (BNIs) on the top interface of the buried oxide (BOX) is presented in a p-SOI high voltage integrated circuits (p-SOI HVICs), which exhibits good self-isolation performance between the power device and low-voltage control circuits. Furthermore, both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V/μm, but also modulate the lateral electric field distribution, resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS. A 673 V BNI SOI LDMOS is experimentally obtained and presents an excellent self-isolation performance in a p-SOI HVIC.

  13. Temporal pulse compression in a xenon-filled Kagome-type hollow-core photonic crystal fiber at high average power.

    PubMed

    Heckl, O H; Saraceno, C J; Baer, C R E; Südmeyer, T; Wang, Y Y; Cheng, Y; Benabid, F; Keller, U

    2011-09-26

    In this study we demonstrate the suitability of Hollow-Core Photonic Crystal Fibers (HC-PCF) for multiwatt average power pulse compression. We spectrally broadened picosecond pulses from a SESAM mode-locked thin disk laser in a xenon gas filled Kagome-type HC-PCF and compressed these pulses to below 250 fs with a hypocycloid-core fiber and 470 fs with a single cell core defect fiber. The compressed average output power of 7.2 W and 10.2 W at a pulse repetition rate of approximately 10 MHz corresponds to pulse energies of 0.7 µJ and 1 µJ and to peak powers of 1.6 MW and 1.7 MW, respectively. Further optimization of the fiber parameters should enable pulse compression to below 50 fs duration at substantially higher pulse energies.

  14. Computations of longitudinal electron dynamics in the recirculating cw RF accelerator-recuperator for the high average power FEL

    NASA Astrophysics Data System (ADS)

    Sokolov, A. S.; Vinokurov, N. A.

    1994-03-01

    The use of optimal longitudinal phase-energy motion conditions for bunched electrons in a recirculating RF accelerator gives the possibility to increase the final electron peak current and, correspondingly, the FEL gain. The computer code RECFEL, developed for simulations of the longitudinal compression of electron bunches with high average current, essentially loading the cw RF cavities of the recirculator-recuperator, is briefly described and illustrated by some computational results.

  15. High peak- and average-power pulse shaped fiber laser in the ns-regime applying step-index XLMA gain fibers

    NASA Astrophysics Data System (ADS)

    Dinger, R.; Grundmann, F.-P.; Hapke, C.; Ruppik, S.

    2014-03-01

    Pulsed fiber lasers and continuous-wave (cw) fiber lasers have become the tool of choice in more and more laser based industrial applications like metal cutting and welding mainly because of their robustness, compactness, high brightness, high efficiency and reasonable costs. However, to further increase the productivity with those laser types there is a great demand for even higher laser power specifications. In this context we demonstrate a pulsed high peak- and averagepower fiber laser in a Master Oscillator Power Amplifier (MOPA) configuration with selectable pulse durations between 1 ns and several hundred nanoseconds. To overcome fiber nonlinearities such as stimulated Raman scattering (SRS) and self-phase-modulation (SPM) flexible Ytterbium doped extra-large mode area (XLMA) step index fibers, prepared by novel powder-sinter technology, have been used as gain fibers. As an example, for 12 ns pulses with a repetition rate of 10 kHz, a pump power limited average laser output power of more than 400 W in combination with peak powers of more than 3.5 MW (close to self-focusing-threshold) has been achieved in stable operation. The potentials of this laser system have been further explored towards longer pulse durations in order to achieve even higher pulse energies by means of pulse shaping techniques. In addition, investigations have been conducted with reduced pulse energies and repetition rates up to 500 kHz and average powers of more than 500 W at nearly diffraction limited beam quality.

  16. Peak torque and average power at flexion/extension of the shoulder and knee when using a mouth guard in adults with mild midline discrepancy.

    PubMed

    Lee, Sang-Yeol; Hong, Min-Ho; Choi, Seung-Jun

    2014-07-01

    [Purpose] This study was conducted to investigate the changes in torque and power during flexion and extension of the shoulder and the knee joints caused by midline correction using mouth guards made from different materials in adults with mild midline discrepancy. [Subjects] The subjects of this study were males (n=12) in their 20s who showed a 3-5 mm difference between the midlines of the upper and lower teeth but had normal masticatory function. [Methods] The torque and average power of the lower limb and upper limb were measured during flexion and extension according to various types of mouth guard. [Results] There were significant differences in relative torque and average power between three conditions (no mouth guard, soft-type mouth guard, and hard-type mouth guard) at shoulder flexion and extension. There were no significant differences in relative torque and average power between the three conditions at knee flexion and extension. [Conclusions] These results suggest that use of a mouth guard is a method by which people with a mild midline discrepancy can improve the stability of the entire body.

  17. Introduction to Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  18. The e-SCRUB Machine: an 800-kV, 500-kW average power pulsed electron beam generator for flue-gas scrubbing

    NASA Astrophysics Data System (ADS)

    Cooper, James R.; Briggs, Ray; Crewson, Walter F.; Johnson, R. D.; Ratafia-Brown, J. A.; Richardson, W. K.; Rienstra, W. W.; Ballard, Perry G.; Cukr, Jeffrey; Cassel, R. L.; Schlitt, Leland; Genuario, R. D.; Morgan, R. D.; Tripoli, G. A.

    1995-03-01

    This paper gives an overview of electron beam dry scrubbing (EBDS) to remove SOx and NOx from flue gases of coal-fired power plants. It also describes the e-SCRUB program, a program currently underway to commercialize this process with an integrated pulsed electron beam. The electron beam, together with injected water and ammonia, causes chemical reactions which convert the SOx and NOx into commercial grade agricultural fertilizer, a usable byproduct. The e-SCRUB facility is a test bed to demonstrate the feasibility and performance of a repetitive, reliable pulsed electron beam generator operating at average power levels of up to 1 MW. This facility contains the electron beam generator and all the auxiliary and support systems required by the machine, including a computer driven central experiment control system, a 100,000 SCFM flowing dry nitrogen load which simulates the characteristics of a power plant flue, and a 2 MVA dedicated electrical service to power the machine. The e-SCRUB electron beam machine is designed to produce an 800 kV pulsed electron beam with a repetition rate of 667 pps. The energy per pulse deposited into the flue gas is approximately 750 J. The pulsed power system converts the utility power input to a 667 pps, 800 kV pulse train which powers the electron gun. The functional units of the pulsed power system will be discussed in the paper, along with some preliminary experimental results.

  19. High average/peak power linearly polarized all-fiber picosecond MOPA seeded by mode-locked noise-like pulses

    NASA Astrophysics Data System (ADS)

    Yu, H. L.; Ma, P. F.; Tao, R. M.; Wang, X. L.; Zhou, P.; Chen, J. B.

    2015-06-01

    The characteristics of mode-locked noise-like pulses generated from a passively mode-locked fiber oscillator are experimentally investigated. By carefully adjusting the two polarization controllers, stable mode-locked noise-like pulse emission with a high radio frequency signal/noise ratio of  >55 dB is successfully achieved, ensuring the safety and possibility of high power amplification. To investigate the amplification characteristics of such pulses, one all-fiber master oscillator power amplifier (MOPA) is built to boost the power and energy of such pulses. Amplified noise-like pulses with average output power of 423 W, repetition rate of 18.71 MHz, pulse energy of 22.61 μJ, pulse duration of 72.1 ps and peak power of 314 kW are obtained. Near diffraction-limited beam is also demonstrated with M2 factor measured at full power operation of ~1.2 in the X and Y directions. The polarization extinction ratio at output power of 183 W is measured to be ~13 dB. To the best of our knowledge, this is the first demonstration of high-power amplification of noise-like pulses and the highest peak power ever reported in all-fiber picosecond MOPAs. The temporal self-compression process of such pulses and high peak power when amplified make it an ideal pump source for generation of high-power supercontinuum. Other potential applications, such as material processing and optical coherent tomography, could also be foreseen.

  20. Pre-chirping management of a self-similar Yb-fiber amplifier towards 80 W average power with sub-40 fs pulse generation.

    PubMed

    Zhao, Jian; Li, Wenxue; Wang, Chao; Liu, Yang; Zeng, Heping

    2014-12-29

    We report on the generation of 80-W average power 38-fs laser pulse from a 2-m polarization-maintaining large-mode-area photonic crystal fiber amplifier with high pump absorption coefficient. The pre-chirping management was demonstrated to play a key role on the self-similar amplification. The achieved spectral bandwidth and compressed pulse duration were determined by the interplay between self-phase modulation and finite gain bandwidth. The power scaling in the self-similar fiber amplifier system was eventually limited by the onset of stimulated Raman scattering. PMID:25607187

  1. The mercury laser system An average power, gas-cooled, Yb:S-FAP based system with frequency conversion and wavefront correction

    NASA Astrophysics Data System (ADS)

    Bibeau, C.; Bayramian, A.; Armstrong, P.; Ault, E.; Beach, R.; Benapfl, M.; Campbell, R.; Dawson, J.; Ebbers, C.; Freitas, B.; Kent, R.; Liao, Z.; Ladran, T.; Menapace, J.; Molander, B.; Moses, E.; Oberhelman, S.; Payne, S.; Peterson, N.; Schaffers, K.; Stolz, C.; Sutton, S.; Tassano, J.; Telford, S.; Utterback, E.; Randles, M.; Chai, B.; Fei, Y.

    2006-06-01

    We report on the operation of the Mercury laser with fourteen 4 × 6 cm2 Yb:S-FAP amplifier slabs pumped by eight 100 kW peak power diode arrays. The system was continuously run at 55 J and 10 Hz for several hours, (2×105 cumulative shots) with over 80% of the energy in a 6 times diffraction limited spot at 1.047 μ m. Improved optical quality was achieved in Yb:S-FAP amplifiers with magneto-rheological finishing, a deterministic polishing method. In addition, average power frequency conversion employing YCOB was demonstrated at 50% conversion efficiency or 22.6 J at 10 Hz.

  2. Investigation of unstable resonators with a variable-reflectivity mirror based on a radial birefringent filter for high-average-power solid-state lasers.

    PubMed

    Kurtev, S; Denchev, O

    1995-07-20

    We investigate a Gaussian-type unstable resonator. The Gaussian mirror comprises a two-element radial birefringent element used within a ring-mirror configuration. It is shown that this resonator compensates undesirable thermally induced birefringence of the active element, which is typical for high-average-power flash-lamp-pumped solid-state lasers. We prove that this resonator is workable and suggest some possibilities for its practical use. Polarization and geometric analyses are also included. PMID:21052249

  3. 1 W average-power 100 MHz repetition-rate 259 nm femtosecond deep ultraviolet pulse generation from ytterbium fiber amplifier.

    PubMed

    Zhou, Xiangyu; Yoshitomi, Dai; Kobayashi, Yohei; Torizuka, Kenji

    2010-05-15

    We demonstrate 1W average-power ultraviolet (UV) femtosecond (fs) ultrashort pulse generation at a wavelength of 259 nm and a repetition rate as high as 100 MHz by quadrupling a fs ytterbium-fiber laser. A cavity-enhanced design is employed for efficient frequency doubling to the UV region. The optical-to-optical efficiency of UV output to the pump diode is 2.6%.

  4. All-fiber high-average power nanosecond-pulsed master-oscillator power amplifier at 2  μm with mJ-level pulse energy.

    PubMed

    Wang, Xiong; Jin, Xiaoxi; Zhou, Pu; Wang, Xiaolin; Xiao, Hu; Liu, Zejin

    2016-03-10

    We present a high-power nanosecond-pulsed Tm-doped fiber amplifier at 1.971 μm based on a master-oscillator power amplifier (MOPA) configuration. When the repetition rate is 500 kHz and the pulse width is 63.3 ns, the average power reaches 238 W, the peak power reaches 7.06 kW, and the pulse energy is 0.477 mJ. When the pulse train's repetition rate is 300 kHz with a pulse width of 63.7 ns, the average power reaches 197 W, the peak power reaches 9.73 kW, and the pulse energy is 0.66 mJ. When the pulse train's repetition rate is 200 kHz with a pulse width of 58.2 ns, the average power reaches 150 W, the peak power reaches 12.1 kW, and the pulse energy is 0.749 mJ. The spectral linewidths of the pulse trains are 0.15, 0.14, and 0.10 nm for 500 kHz repetition rate, 300 kHz repetition rate, and 200 kHz repetition rate, respectively. To the best of our knowledge, this is the first demonstration of high-power nanosecond-pulsed MOPA at 2 μm with the maximum average power reaching 238 W, the maximum peak power reaching 12.1 kW, and the maximum pulse energy reaching 0.749 mJ.

  5. The Influence of the Age, the Years of Training, and the BMI on the Average Muscle Power in Male and Female Rowers.

    PubMed

    Mogus, Mate; Fric, Vlasta Orsić; Atalić, Bruno

    2015-12-01

    The aim of the study was to evaluate the influence of the age, the body mass index (BMI), and the years of training on the average muscle power in male and female rowers. The analysis of the testing results of the members of the Rowing club Iktus from Osijek in Croatia was performed. Results were obtained during the regular yearly testing on the rowing ergometer for the rowing season of 2009. Members of the Rowing club Iktus were divided into two subgroups according to their sex. The obtained results were analysed in accordance with the age, the BMI, and the years of training independently for the each of the two subgroups. The results have showed that the average muscle power is independent of all the three parameters in the male rowers, while it is dependent on the age and the years of training in the female rowers. It seems that the BMI does not play any role at all in the average muscle power. As a conclusion, it could be stated that while one can suggest to female rowers to improve their performance with prolonged training, there is a need for a further research in order to formulate a suitable advice for male rowers. PMID:26987157

  6. Diode-pumped continuous-wave and femtosecond Cr:LiCAF lasers with high average power in the near infrared, visible and near ultraviolet.

    PubMed

    Demirbas, Umit; Baali, Ilyes; Acar, Durmus Alp Emre; Leitenstorfer, Alfred

    2015-04-01

    We demonstrate continuous-wave (cw), cw frequency-doubled, cw mode-locked and Q-switched mode-locked operation of multimode diode-pumped Cr:LiCAF lasers with record average powers. Up to 2.54 W of cw output is obtained around 805 nm at an absorbed pump power of 5.5 W. Using intracavity frequency doubling with a BBO crystal, 0.9 W are generated around 402 nm, corresponding to an optical-to-optical conversion efficiency of 12%. With an intracavity birefringent tuning plate, the fundamental and frequency-doubled laser output is tuned continuously in a broad wavelength range from 745 nm to 885 nm and from 375 to 440 nm, respectively. A saturable Bragg reflector is used to initiate and sustain mode locking. In the cw mode-locked regime, the Cr:LiCAF laser produces 105-fs long pulses near 810 nm with an average power of 0.75 W. The repetition rate is 96.4 MHz, resulting in pulse energies of 7.7 nJ and peak powers of 65 kW. In Q-switched mode-locked operation, pulses with energies above 150 nJ are generated.

  7. Continuously tunable Yb:KYW femtosecond oscillator based on a tunable highly dispersive semiconductor mirror.

    PubMed

    Wnuk, P; Wasylczyk, P; Zinkiewicz, Ł; Dems, M; Hejduk, K; Regiński, K; Wójcik-Jedlińska, A; Jasik, A

    2014-07-28

    The optimized nonuniform growth process was used to achieve spatially dependent reflectivity and dispersions characteristics in a highly dispersive semiconductor mirror. The mirror, together with a semiconductor saturable absorber mirror (SESAM), was used to demonstrate a tunable femtosecond Yb:KYW oscillator. In the passive modelocking regime the laser could be continuously tuned over 3.5 nm spectral band around 1032 nm with high resolution, maintaining the average output power above 140 mW. PMID:25089448

  8. Terbium gallium garnet ceramic-based Faraday isolator with compensation of thermally induced depolarization for high-energy pulsed lasers with kilowatt average power

    SciTech Connect

    Yasuhara, Ryo; Snetkov, Ilya; Starobor, Alexey; Palashov, Oleg

    2014-12-15

    A scalable aperture Faraday isolator for high-energy pulsed lasers with kW-level average power was demonstrated using terbium gallium garnet ceramics with water cooling and compensation of thermally induced depolarization in a magnetic field. An isolation ratio of 35 dB (depolarization ratio γ of 3.4 × 10{sup −4}) was experimentally observed at a maximum laser power of 740 W. By using this result, we estimated that this isolator maintains an isolation ratio of 30 dB for laser powers of up to 2.7 kW. Our results provide the solution for achieving optical isolation in high-energy (100 J to kJ) laser systems with a repetition rate greater than 10 Hz.

  9. Development of a kilowatt-class, joule-level ultrafast laser for driving compact high average power coherent EUV/soft x-ray sources

    NASA Astrophysics Data System (ADS)

    Reagan, Brendan A.; Baumgarten, Cory M.; Pedicone, Michael A.; Bravo, Herman; Yin, Liang; Woolston, Mark; Wang, Hanchen; Menoni, Carmen S.; Rocca, Jorge J.

    2016-03-01

    Our recent progress in the development of high energy / high average power, chirped pulse amplification laser systems based on diode-pumped, cryogenically-cooled Yb:YAG amplifiers is discussed, including the demonstration of a laser that produces 1 Joule, sub-10 picosecond duration, λ = 1.03μm pulses at 500 Hz repetition rate. This compact, all-diodepumped laser combines a mode-locked Yb:KYW oscillator and a water-cooled Yb:YAG preamplifer with two cryogenic power amplification stages to produce 1.5 Joule pulses with high beam quality which are subsequently compressed. This laser system occupies an optical table area of less than 1.5x3m2. This laser was employed to pump plasma-based soft x-ray lasers at λ = 10-20nm at repetition rates >=100 Hz. To accomplish this, temporally-shaped pulses were focused at grazing incidence into a high aspect ratio line focus using cylindrical optics on a high shot capacity rotating metal target. This results in an elongated plasma amplifier that produces microjoule pulses at several narrow-linewidth EUV wavelengths between λ = 109Å and 189Å. The resulting fraction of a milliwatt average powers are the highest reported to date for a compact, coherent source operating at these wavelengths, to the best of our knowledge.

  10. Measurement techniques for high-power semiconductor materials and devices. Annual report, October 1, 1980-December 31, 1981. [For calculating excess-carrier lifetime in silicon

    SciTech Connect

    Thurber, W R; Phillips, W E; Larrabee, R D

    1982-08-01

    This annual report describes results of NBS research directed toward the development of measurement methods for semiconductor materials and devices which will lead to more effective use of high-power semiconductor devices in applications for energy generation, transmission, conversion, and conservation. Emphasis is on the development of measurement methods for power-device-grade silicon. Major accomplishments during this reporting period were : (1) characterizing by deep level transient spectroscopy (DLTS) the energy levels in silicon power rectifier diodes, (2) writing of a computer program to predict lifetime-related parameters using as input the measured properties of the deep energy levels, (3) developing a novel method to detect nonexponential transients using a conventional double-boxcar DLTS system, (4) analyzing transient capacitance measurements to extend the techniques to nonexponential decays, (5) using a platinum resistance thermometer to calibrate temperature sensing diodes to obtain the precision needed for careful isothermal capacitance measurements, and (6) utilizing trap changing time as a technique to resolve overlapping DLTS peaks in sulfur-doped silicon.

  11. 900-mW average power and tunability from a diode-pumped 2.94-{mu}m Er:YAG oscillator

    SciTech Connect

    Hamilton, C.E.; Beach, R.J.; Sutton, S.B.; Furu, L.; Krupke, W.F.

    1994-01-01

    In this paper, the authors report on a diode-side-pumped Er:YAG laser that generates over 500 mW of average power at 2.94 {mu}m, and tunes over a 6 nm range centered about the 2.94-{mu}m transition. Prior to the development of the laser, diode-pumped Er:YAG lasers have been end-pumped monolithic devices that deliver {approximately}200 mW of output at 2.94 {mu}m. Much of the difficulty in obtaining higher average power from Er:YAG stems from the unfavorable lifetimes of the upper and lower laser levels, the complex state dynamics, and a low stimulated emission cross section ({sigma} {approx} 3 {times} 10{sup {minus}20} cm{sup 2}). One of the most important dynamical processes in Er:YAG is cross relaxation between neighboring Er{sup 3+} ions in the {sup 4}I{sub 13/2} level. By recycling much of the {sup 4}I{sub 13/2} population (lower laser level) into {sup 4}I{sub 11/2} (upper laser level), the cross relaxation overcomes the unfavorable lifetimes of the two levels, allowing the population inversion to be sustained. It is this cross relaxation along with thermalization of the two laser levels that allows cw oscillation on the 2.94 {mu}m line to take place. The laser that they describe here is a quasi-cw device as the approach to obtaining higher average power and limited tunability relies on side pumping with a quasi-cw InGaAs laser diode array. In this way, a higher gain-length product is generated, which is necessary for extending the tuning range of the laser, and for overcoming the higher losses associated with a discreet-element resonator.

  12. The Mercury Laser System: An Average power, gas-cooled, Yb:S-FAP based system with frequency conversion and wavefront correction

    SciTech Connect

    Bibeau, C; Bayramian, A; Armstrong, P; Ault, E; Beach, R; Benapfl, M; Campbell, R; Dawson, J; Ebbers, C; Freitas, B; Kent, R; Liao, Z; Ladran, T; Menapace, J; Molander, B; Moses, E; Oberhelman, S; Payne, S; Peterson, N; Schaffers, K; Stolz, C; Sutton, S; Tassano, J; Telford, S; Utterback, E; Randles, M

    2005-08-31

    We report on the operation of the Mercury laser with fourteen 4 x 6 cm{sup 2} Yb:S-FAP amplifier slabs pumped by eight 100 kW peak power diode arrays. The system was continuously run at 55 J and 10 Hz for several hours, (2 x 10{sup 5} cumulative shots) with over 80% of the energy in a 6 times diffraction limited spot at 1.047 um. Improved optical quality was achieved in Yb:S-FAP amplifiers with magneto-rheological finishing, a deterministic polishing method. In addition, average power frequency conversion employing YCOB was demonstrated at 50% conversion efficiency or 22.6 J at 10 Hz.

  13. Evaluation of the peak torque, total work, average power of flexor-estensor and prono-supinator muscles of the elbow in baseball players.

    PubMed

    Costantino, Cosimo; Vaienti, Enrico; Pogliacomi, Francesco

    2003-08-01

    The Authors, after a short analysis on biomechanics of the elbow during throwing in baseball, show the movements of the elbow during the different phases of the throw and the stabilizing action of the ulnar collateral ligament, flexor-pronator muscles of the wrist, anconeus and brachial triceps muscles. Aim of this study is the evaluation of the peak torque, total work and average power of the flexor-extensor and pronator-supinator muscles of the elbows in professional baseball players. Isokinetic test data show that a mayor peak torque in flexo-extension at power and resistance test in the pitchers compared to the strikers. Whereas the strikers show a higher peak torque in pronation at the resistance test. This may happen because during a baseball match the ball is hit many times by the bat and the pronator muscle of the wrist are notably stimulated and reinforced.

  14. Tunable mid-IR parametric conversion system pumped by a high-average-power picosecond Yb:YAG thin-disk laser

    NASA Astrophysics Data System (ADS)

    Novák, Ondřej; Miura, Taisuke; Smrž, Martin; Huynh, Jaroslav; Severová, Patricie; Endo, Akira; Mocek, TomáÅ.¡

    2014-05-01

    The mid-IR wavelength range has gained increased interest due to its applications in gas sensing, medicine, defense, and others. Optical parametric devices play an important role in the generation of radiation in the mid-IR. Low thermal load of nonlinear crystals promises high average power outputs if powerful pump laser is available. We have developed 75-W average power pump laser operating at 100 kHz repetition rate. The pulses of Yb-fiber laser oscillator at 1030-nm wavelength are stretched by a chirped volume Bragg grating from 5 ps to 180 ps and inserted into a cavity of regenerative amplifier with an Yb:YAG thin-disk. The amplified pulses are compressed by a chirped volume Bragg grating with an 88% efficiency. We have proposed a wavelength conversion system generating picosecond pulses tunable between 2 and 3 μm. The seed signal radiation is acquired by the optical parametric generation in the first nonlinear crystal. Signal pulse energy is increased in the subsequent optical parametric amplifiers. Each amplification stage consists of a crystal pair in the walkoff compensating arrangement. The wavelength of the signal beam is tunable between 1.6 and 2.1 μm. The 2.1 - 3 μm tunable source will be the idler beam taken from the last amplification stage. Calculations show the output power of ten watt can be achieved for 100 W pump. The results of preliminary experiments with seeded optical parametric generation and subsequent amplification are presented and discussed.

  15. Continuous-wave seeded mid-IR parametric system pumped by the high-average-power picosecond Yb:YAG thin-disk laser

    NASA Astrophysics Data System (ADS)

    Novák, Ondřej; Smrž, Martin; Miura, Taisuke; Turčičová, Hana; Endo, Akira; Mocek, Tomáś

    2015-05-01

    Mid-IR wavelength range offers variety of interesting applications. Down-conversion in the optical parametric devices is promising to generate high average power mid-IR beam due to inherently low thermal load of the nonlinear crystals if a powerful and high quality pump beam is available. We developed 100 kHz pump laser of 100-W level average power. The stretched pulses of Yb-fiber laser oscillator at 1030 nm wavelength are injected into the regenerative amplifier with an Yb:YAG thin-disk. Diode pumping at zero phonon line at wavelength of 969 nm significantly reduces its thermal load and increases conversion efficiency and stability. We obtained the beam with power of 80 W and 2 ps compressed pulsewidth. We are developing a watt level mid-IR picosecond light source pumped by a beam of the thin disk regenerative amplifier. Part of the beam pumps PPLN, which is seeded by a continuous wave laser diode at 1.94 μm to decrease the generation threshold and determine the amplified spectrum. The 3 W pumping gave output of 30 mW, which is by up to two orders higher compared to unseeded operation. The gain of about 107 was achieved in the PPLN in the temporal window of the pump pulse. The spectrum and beam of the generated idler pulses in the mid-IR was measured. We obtained an amplified signal from the second stage with the KTP crystal. We expect watt level mid-IR output for initial 50-W pumping. The generation of longer wavelengths is discussed.

  16. Performance of MgO:PPLN, KTA, and KNbO₃ for mid-wave infrared broadband parametric amplification at high average power.

    PubMed

    Baudisch, M; Hemmer, M; Pires, H; Biegert, J

    2014-10-15

    The performance of potassium niobate (KNbO₃), MgO-doped periodically poled lithium niobate (MgO:PPLN), and potassium titanyl arsenate (KTA) were experimentally compared for broadband mid-wave infrared parametric amplification at a high repetition rate. The seed pulses, with an energy of 6.5 μJ, were amplified using 410 μJ pump energy at 1064 nm to a maximum pulse energy of 28.9 μJ at 3 μm wavelength and at a 160 kHz repetition rate in MgO:PPLN while supporting a transform limited duration of 73 fs. The high average powers of the interacting beams used in this study revealed average power-induced processes that limit the scaling of optical parametric amplification in MgO:PPLN; the pump peak intensity was limited to 3.8  GW/cm² due to nonpermanent beam reshaping, whereas in KNbO₃ an absorption-induced temperature gradient in the crystal led to permanent internal distortions in the crystal structure when operated above a pump peak intensity of 14.4  GW/cm².

  17. Performance of MgO:PPLN, KTA, and KNbO₃ for mid-wave infrared broadband parametric amplification at high average power.

    PubMed

    Baudisch, M; Hemmer, M; Pires, H; Biegert, J

    2014-10-15

    The performance of potassium niobate (KNbO₃), MgO-doped periodically poled lithium niobate (MgO:PPLN), and potassium titanyl arsenate (KTA) were experimentally compared for broadband mid-wave infrared parametric amplification at a high repetition rate. The seed pulses, with an energy of 6.5 μJ, were amplified using 410 μJ pump energy at 1064 nm to a maximum pulse energy of 28.9 μJ at 3 μm wavelength and at a 160 kHz repetition rate in MgO:PPLN while supporting a transform limited duration of 73 fs. The high average powers of the interacting beams used in this study revealed average power-induced processes that limit the scaling of optical parametric amplification in MgO:PPLN; the pump peak intensity was limited to 3.8  GW/cm² due to nonpermanent beam reshaping, whereas in KNbO₃ an absorption-induced temperature gradient in the crystal led to permanent internal distortions in the crystal structure when operated above a pump peak intensity of 14.4  GW/cm². PMID:25361089

  18. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

    PubMed

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-01

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition.

  19. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    SciTech Connect

    Podoskin, A. A. Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S.

    2015-08-15

    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  20. Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers.

    PubMed

    Lysevych, M; Tan, H H; Karouta, F; Fu, L; Jagadish, C

    2013-04-01

    In this paper we report a method to overcome the limitations of gain-saturation and two-photon absorption faced by developers of high power single mode InP-based lasers and semiconductor optical amplifiers (SOA) including those based on wide-waveguide or slab-coupled optical waveguide laser (SCOWL) technology. The method is based on Y-coupling design of the laser cavity. The reduction in gain-saturation and two-photon absorption in the merged beam laser structures (MBL) are obtained by reducing the intensity of electromagnetic field in the laser cavity. Standard ridge-waveguide lasers and MBLs were fabricated, tested and compared. Despite a slightly higher threshold current, the reduced gain-saturation in MBLs results in higher output power. The MBLs also produced a single spatial mode, as well as a strongly dominating single spectral mode which is the inherent feature of MBL-type cavity.

  1. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  2. Semiconductor devices having a recessed electrode structure

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  3. Diode having trenches in a semiconductor region

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  4. High average power difference-frequency generation of picosecond mid-IR pulses at 80MHz using an Yb-fiber laser pumped optical parametric oscillator

    NASA Astrophysics Data System (ADS)

    Michel, Julia; Beutler, Marcus; Rimke, Ingo; Büttner, Edlef; Farinello, Paolo; Agnesi, Antonio; Petrov, Valentin P.

    2015-02-01

    We present an efficient coherent source widely tunable in the mid-infrared spectral range consisting of a commercial picosecond Yb-fiber laser operating at 80 MHz repetition rate, a synchronously-pumped OPO (SPOPO) and differencefrequency generation (DFG) in AgGaSe2. With an average input pump power of 7.8 W at 1032 nm and at 80 MHz, the SPOPO outputs are tunable from 1380 to 1980 nm (Signal) and from 2.1 to ~4 μm (Idler) with pulse durations between 2.1 and 2.6 ps over the entire tuning range. After temporally overlapping Signal and Idler through a delay line, the two beams are spatially recombined with a dichroic mirror (reflecting for the Signal in s-polarization and transmitting for the Idler in p-polarization), and focused by a 150 mm CaF2 lens to a common focus. For DFG we employ an AR-coated 10- mm thick AgGaSe2 nonlinear crystal cut for type-I interaction at θ =52°. The generated mid-infrared picosecond pulses are continuously tunable between 5 and 18 μm with average power up to 130 mW at 6 μm and more than 1 mW at 18 μm. Their spectra and autocorrelation traces are measured up to 15 μm and 11 μm, respectively, and indicate that the input spectral bandwidth and pulse duration are maintained to a great extent in the nonlinear frequency conversion processes. The pulse duration slightly decreases from 2.1 to 1.9 ps at 6.7 μm while the spectral bandwidth supports ~1.5 ps (~10 cm-1)durations across the entire mid-infrared tuning range. For the first time narrow-band mid-infrared pulses with energy exceeding 1 nJ are generated at such high repetition rates.

  5. High temperature heat source generation with quasi-continuous wave semiconductor lasers at power levels of 6 W for medical use.

    PubMed

    Fujimoto, Takahiro; Imai, Yusuke; Tei, Kazuyoku; Ito, Shinobu; Kanazawa, Hideko; Yamaguchi, Shigeru

    2014-01-01

    We investigate a technology to create a high temperature heat source on the tip surface of the glass fiber proposed for medical surgery applications. Using 4 to 6 W power level semiconductor lasers at a wavelength of 980 nm, a laser coupled fiber tip was preprocessed to contain a certain amount of titanium oxide powder with a depth of 100 μm from the tip surface so that the irradiated low laser energy could be perfectly absorbed to be transferred to thermal energy. Thus, the laser treatment can be performed without suffering from any optical characteristic of the material. A semiconductor laser was operated quasi-continuous wave mode pulse time duration of 180 ms and >95% of the laser energy was converted to thermal energy in the fiber tip. Based on two-color thermometry, by using a gated optical multichannel analyzer with a 0.25 m spectrometer in visible wavelength region, the temperature of the fiber tip was analyzed. The temperature of the heat source was measured to be in excess 3100 K.

  6. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

    PubMed

    Farhadi, Rozita; Farhadi, Bita

    2014-01-01

    Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines.

  7. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

    PubMed

    Farhadi, Rozita; Farhadi, Bita

    2014-01-01

    Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines. PMID:25763152

  8. SEMICONDUCTOR DEVICES: Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

    NASA Astrophysics Data System (ADS)

    Lixin, Zhao; Zhi, Jin; Xinyu, Liu

    2009-12-01

    In wireless mobile communications and wireless local area networks (WLAN), advanced InGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs.

  9. High-resolution X-ray imaging—a powerful nondestructive technique for applications in semiconductor industry

    NASA Astrophysics Data System (ADS)

    Zschech, Ehrenfried; Yun, Wenbing; Schneider, Gerd

    2008-08-01

    The availability of high-brilliance X-ray sources, high-precision X-ray focusing optics and very efficient CCD area detectors has contributed essentially to the development of transmission X-ray microscopy (TXM) and X-ray computed tomography (XCT) with sub-50 nm resolution. Particularly, the fabrication of high aspect ratio Fresnel zone plates with zone widths approaching 15 nm has contributed to the enormous improvement in spatial resolution during the previous years. Currently, Fresnel zone plates give the ability to reach spatial resolutions of 15 to 20 nm in the soft and of about 30 to 50 nm in the hard X-ray energy range. X-ray microscopes with rotating anode X-ray sources that can be installed in an analytical lab next to a semiconductor fab have been developed recently. These unique TXM/XCT systems provide an important new capability of nondestructive 3D imaging of internal circuit structures without destructive sample preparation such as cross sectioning. These lab systems can be used for failure localization in micro- and nanoelectronic structures and devices, e.g., to visualize voids and residuals in on-chip metal interconnects without physical modification of the chip. Synchrotron radiation experiments have been used to study new processes and materials that have to be introduced into the semiconductor industry. The potential of TXM using synchrotron radiation in the soft X-ray energy range is shown for the nondestructive in situ imaging of void evolution in embedded on-chip copper interconnect structures during electromigration and for the imaging of different types of insulating thin films between the on-chip interconnects (spectromicroscopy).

  10. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

    NASA Astrophysics Data System (ADS)

    Hong, Augustin Jinwoo

    Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

  11. Optimization of X-ray sources from a high-average-power ND:Glass laser-produced plasma for proximity lithography

    SciTech Connect

    Celliers, P.; Da Silva, L.B.; Dane, C.B.

    1996-06-01

    The concept of a laser-based proximity lithography system for electronic microcircuit production has advanced to the point where a detailed design of a prototype system capable of exposing wafers at 40 wafer levels per hr is technically feasible with high-average-power laser technology. In proximity x-ray lithography, a photoresist composed of polymethyl- methacrylate (PMMA) or similar material is exposed to x rays transmitted through a mask placed near the photoresist, a procedure which is similar to making a photographic contact print. The mask contains a pattern of opaque metal features, with line widths as small as 0.12 {mu}m, placed on a thin (1-{mu}m thick) Si membrane. During the exposure, the shadow of the mask projected onto the resist produces in the physical and chemical properties of the resist a pattern of variation with the same size and shape as the features contained in the metal mask. This pattern can be further processed to produce microscopic structures in the Si substrate. The main application envisioned for this technology is the production of electronic microcircuits with spatial features significantly smaller than currently achievable with conventional optical lithographic techniques (0.12 {micro}m vs 0.25 {micro}m). This article describes work on optimizing a laser-produced plasma x-ray source intended for microcircuit production by proximity lithography.

  12. Plasma wakefields driven by an incoherent combination of laser pulses: a path towards high-average power laser-plasma accelerators

    SciTech Connect

    Benedetti, C.; Schroeder, C.B.; Esarey, E.; Leemans, W.P.

    2014-05-01

    he wakefield generated in a plasma by incoherently combining a large number of low energy laser pulses (i.e.,without constraining the pulse phases) is studied analytically and by means of fully-self-consistent particle-in-cell simulations. The structure of the wakefield has been characterized and its amplitude compared with the amplitude of the wake generated by a single (coherent) laser pulse. We show that, in spite of the incoherent nature of the wakefield within the volume occupied by the laser pulses, behind this region the structure of the wakefield can be regular with an amplitude comparable or equal to that obtained from a single pulse with the same energy. Wake generation requires that the incoherent structure in the laser energy density produced by the combined pulses exists on a time scale short compared to the plasma period. Incoherent combination of multiple laser pulses may enable a technologically simpler path to high-repetition rate, high-average power laser-plasma accelerators and associated applications.

  13. Plasma wakefields driven by an incoherent combination of laser pulses: A path towards high-average power laser-plasma accelerators

    SciTech Connect

    Benedetti, C.; Schroeder, C. B.; Esarey, E.; Leemans, W. P.

    2014-05-15

    The wakefield generated in a plasma by incoherently combining a large number of low energy laser pulses (i.e., without constraining the pulse phases) is studied analytically and by means of fully self-consistent particle-in-cell simulations. The structure of the wakefield has been characterized and its amplitude compared with the amplitude of the wake generated by a single (coherent) laser pulse. We show that, in spite of the incoherent nature of the wakefield within the volume occupied by the laser pulses, behind this region, the structure of the wakefield can be regular with an amplitude comparable or equal to that obtained from a single pulse with the same energy. Wake generation requires that the incoherent structures in the laser energy density produced by the combined pulses exist on a time scale short compared to the plasma period. Incoherent combination of multiple laser pulses may enable a technologically simpler path to high-repetition rate, high-average power laser-plasma accelerators, and associated applications.

  14. Combined peak-to-average power ratio reduction and physical layer security enhancement in optical orthogonal frequency division multiplexing visible-light communication systems

    NASA Astrophysics Data System (ADS)

    Wang, Zhongpeng; Chen, Shoufa

    2016-07-01

    A physical encryption scheme for discrete Hartley transform (DHT) precoded orthogonal frequency division multiplexing (OFDM) visible-light communication (VLC) systems using frequency domain chaos scrambling is proposed. In the scheme, the chaos scrambling, which is generated by a modified logistic mapping, is utilized to enhance the physical layer of security, and the DHT precoding is employed to reduce of OFDM signal for OFDM-based VLC. The influence of chaos scrambling on peak-to-average power ratio (PAPR) and bit error rate (BER) of systems is studied. The experimental simulation results prove the efficiency of the proposed encryption method for DHT-precoded, OFDM-based VLC systems. Furthermore, the influence of the proposed encryption to the PAPR and BER of systems is evaluated. The experimental results show that the proposed security scheme can protect the DHT-precoded, OFDM-based VLC from eavesdroppers, while keeping the good BER performance of DHT-precoded systems. The BER performance of the encrypted and DHT-precoded system is almost the same as that of the conventional DHT-precoded system without encryption.

  15. Generation of sub-100 ps pulses with a peak power of 65 W by gain switching, pulse shortening, and pulse amplification using a semiconductor-based master oscillator-power amplifier system.

    PubMed

    Schwertfeger, Sven; Klehr, Andreas; Hoffmann, Thomas; Liero, Armin; Wenzel, Hans; Erbert, Götz

    2013-05-10

    We present a method of the generation of sub-100 ps pulses with an all-semiconductor master oscillator-power amplifier (MOPA) system, consisting of a three section distributed Bragg reflector (DBR) laser as MO and a two section tapered PA. The pulses generated by the gain-switched DBR laser are first shortened by the ridge-waveguide input section of the PA acting as a saturable absorber and then amplified by the tapered gain region section. We generate laser pulses with a minimum duration of 35 ps and a peak power of more than 65 W. The spectral width is less than 0.25 nm around a center wavelength of 1063 nm. PMID:23669852

  16. High-Efficiency, Low-Voltage, Compound Semiconductor Devices for Microwave and MM-Wave Power Amplifiers

    SciTech Connect

    Chao, P.C.; Hietala, V.M.; Kong, W.; Sloan, Lynn R.

    1999-07-14

    Improvements in the last decade in InP materials growth, device processing techniques, characterization, and circuit design have enabled solid-state power performance through 122 GHz. Although originally targeted for low-noise and power performance at mm-wave frequencies (>30 GHz), InP HEMTs could become the preferred device for frequencies as low as 800 MHz. This investment has benefited the microwave frequency regime with higher efficiency and power densities at lower operating voltages. State-of-the-art microwave performance at lower operating voltage provides a path to smaller, lighter-weight systems in the battery operated arena of commercial and defense electronics. This paper describes an InP HEMT technology being investigated for many power and low-noise amplifier applications from UHF to W-band frequencies. Specifically the technology demonstrated 640mW/mm power density, 27 dB gain, and 84% power-added efficiency at L-band with a bias of 3.0 volts. Based on the author's literature search, this is a record efficiency at L-band with an operating voltage of less than 5 volts.

  17. Medical applications of semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Mancha, Sylvia D.; Keipert, Andreas; Prairie, Michael W.

    1994-06-01

    The High Power Semiconductor Laser Technology (HPSLT) program is currently developing, in-house, a belt pack medical laser. This compact semiconductor laser device provides the field paramedic or physician a unique portable laser capability. The pack consists of a completely self-contained laser system that fits inside a belt pack. Several other medical applications being investigated by the HPSLT program include urological applications, photodynamic therapy, and ophthalmic applications.

  18. Radiofrequency current source (RFCS) drive and decoupling technique for parallel transmit arrays using a high-power metal oxide semiconductor field-effect transistor (MOSFET).

    PubMed

    Lee, Wonje; Boskamp, Eddy; Grist, Thomas; Kurpad, Krishna

    2009-07-01

    A radiofrequency current source (RFCS) design using a high-power metal oxide semiconductor field effect transistor (MOSFET) that enables independent current control for parallel transmit applications is presented. The design of an RFCS integrated with a series tuned transmitting loop and its associated control circuitry is described. The current source is operated in a gated class AB push-pull configuration for linear operation at high efficiency. The pulsed RF current amplitude driven into the low impedance transmitting loop was found to be relatively insensitive to the various loaded loop impedances ranging from 0.4 to 10.3 ohms, confirming current mode operation. The suppression of current induced by a neighboring loop was quantified as a function of center-to-center loop distance, and was measured to be 17 dB for nonoverlapping, adjacent loops. Deterministic manipulation of the B(1) field pattern was demonstrated by the independent control of RF phase and amplitude in a head-sized two-channel volume transmit array. It was found that a high-voltage rated RF power MOSFET with a minimum load resistance, exhibits current source behavior, which aids in transmit array design.

  19. Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications

    NASA Astrophysics Data System (ADS)

    Yamauchi, Yoshimitsu; Kamakura, Yoshinari; Isagi, Yousuke; Matsuoka, Toshimasa; Malotaux, Satoshi

    2013-09-01

    A novel floating-gate oxide semiconductor (FLOTOS) memory using a wide-band-gap indium-gallium-zinc oxide (IGZO) is presented for low-power system-on-panel applications. An IGZO thin-film-transistor (TFT) is used as a memory transistor for controlling read current as well as a switching transistor for storing charges in a storage capacitor (Cs). The FLOTOS memory is fabricated using a standard IGZO TFT process without any additional process or mask steps. The proposed precharge-assisted threshold voltage compensation technique makes it possible to realize an infinite number of write cycles and a low-power write operation with a bit-line voltage of 5 V. Furthermore, excellent data retention longer than 10 h is obtained at 60 °C even under the worst bias-stress condition of read operation with the ultra low off-state leakage (2.8×10-20 A/µm) of the IGZO TFTs, which is estimated to be smaller by more than 7 orders of magnitude than that of polycrystalline silicon TFTs.

  20. Radiofrequency current source (RFCS) drive and decoupling technique for parallel transmit arrays using a high-power metal oxide semiconductor field-effect transistor (MOSFET).

    PubMed

    Lee, Wonje; Boskamp, Eddy; Grist, Thomas; Kurpad, Krishna

    2009-07-01

    A radiofrequency current source (RFCS) design using a high-power metal oxide semiconductor field effect transistor (MOSFET) that enables independent current control for parallel transmit applications is presented. The design of an RFCS integrated with a series tuned transmitting loop and its associated control circuitry is described. The current source is operated in a gated class AB push-pull configuration for linear operation at high efficiency. The pulsed RF current amplitude driven into the low impedance transmitting loop was found to be relatively insensitive to the various loaded loop impedances ranging from 0.4 to 10.3 ohms, confirming current mode operation. The suppression of current induced by a neighboring loop was quantified as a function of center-to-center loop distance, and was measured to be 17 dB for nonoverlapping, adjacent loops. Deterministic manipulation of the B(1) field pattern was demonstrated by the independent control of RF phase and amplitude in a head-sized two-channel volume transmit array. It was found that a high-voltage rated RF power MOSFET with a minimum load resistance, exhibits current source behavior, which aids in transmit array design. PMID:19353658

  1. High-power high-brightness semiconductor tapered diode lasers for the red and near infrared spectral range

    NASA Astrophysics Data System (ADS)

    Sumpf, B.; Wenzel, H.; Erbert, G.

    2010-02-01

    The most promising concept to achieve high-output power together with a good beam quality is the tapered laser consisting of a straight ridge waveguide (RW) section and a tapered gain-region. The RW section should support only the fundamental guided mode and should suppress higher order modes. The taper angle has to be selected with respect to the lateral divergence of the beam propagating from the RW to the tapered section. High brightness tapered devices in the wavelength range between 635 nm and 1085 nm will be presented. For red emitting tapered lasers around 650 nm, the output power is limited to about 1 W due to the properties of the laser material. At this output power a beam propagation ratio M2 of 1.3 and a brightness of 100 MW•cm-2•sr-1 will be shown. Devices made from laser structures with low vertical divergence down to 25° (95% power included) without a significant deterioration of device parameters will be presented for the longer wavelength range near 1 μm. For tapered lasers manufactured from these structures, nearly diffraction limited output powers larger than 10 W and a brightness of 1 GW•cm-2•sr-1 were measured.

  2. SEMICONDUCTOR INTEGRATED CIRCUITS: A high-performance, low-power σ Δ ADC for digital audio applications

    NASA Astrophysics Data System (ADS)

    Hao, Luo; Yan, Han; Cheung, Ray C. C.; Xiaoxia, Han; Shaoyu, Ma; Peng, Ying; Dazhong, Zhu

    2010-05-01

    A high-performance low-power σ Δ analog-to-digital converter (ADC) for digital audio applications is described. It consists of a 2-1 cascaded σ Δ modulator and a decimation filter. Various design optimizations are implemented in the system design, circuit implementation and layout design, including a high-overload-level coefficient-optimized modulator architecture, a power-efficient class A/AB operational transconductance amplifier, as well as a multi-stage decimation filter conserving area and power consumption. The ADC is implemented in the SMIC 0.18-μm CMOS mixed-signal process. The experimental chip achieves a peak signal-to-noise-plus-distortion ratio of 90 dB and a dynamic range of 94 dB over 22.05-kHz audio band and occupies 2.1 mm2, which dissipates only 2.1 mA quiescent current in the analog circuits.

  3. Experiment Safety Assurance Package for Mixed Oxide Fuel Irradiation in an Average Power Position (I-24) in the Advanced Test Reactor

    SciTech Connect

    J. M . Ryskamp; R. C. Howard; R. C. Pedersen; S. T. Khericha

    1998-10-01

    The Fissile Material Disposition Program Light Water Reactor Mixed Oxide Fuel Irradiation Test Project Plan details a series of test irradiations designed to investigate the use of weapons-grade plutonium in MOX fuel for light water reactors (LWR) (Cowell 1996a, Cowell 1997a, Thoms 1997a). Commercial MOX fuel has been successfully used in overseas reactors for many years; however, weapons-derived test fuel contains small amounts of gallium (about 2 parts per million). A concern exists that the gallium may migrate out of the fuel and into the clad, inducing embrittlement. For preliminary out-of-pile experiments, Wilson (1997) states that intermetallic compound formation is the principal interaction mechanism between zircaloy cladding and gallium. This interaction is very limited by the low mass of gallium, so problems are not expected with the zircaloy cladding, but an in-pile experiment is needed to confirm the out-of-pile experiments. Ryskamp (1998) provides an overview of this experiment and its documentation. The purpose of this Experiment Safety Assurance Package (ESAP) is to demonstrate the safe irradiation and handling of the mixed uranium and plutonium oxide (MOX) Fuel Average Power Test (APT) experiment as required by Advanced Test Reactor (ATR) Technical Safety Requirement (TSR) 3.9.1 (LMITCO 1998). This ESAP addresses the specific operation of the MOX Fuel APT experiment with respect to the operating envelope for irradiation established by the Upgraded Final Safety Analysis Report (UFSAR) Lockheed Martin Idaho Technologies Company (LMITCO 1997a). Experiment handling activities are discussed herein.

  4. Key techniques for space-based solar pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  5. SEMICONDUCTOR INTEGRATED CIRCUITS: A low power cyclic ADC design for a wireless monitoring system for orthopedic implants

    NASA Astrophysics Data System (ADS)

    Yi, Chen; Fule, Li; Hong, Chen; Chun, Zhang; Zhihua, Wang

    2009-08-01

    This paper presents a low power cyclic analog-to-digital convertor (ADC) design for a wireless monitoring system for orthopedic implants. A two-stage cyclic structure including a single to differential converter, two multiplying DAC functional blocks (MDACs) and some comparators is adopted, which brings moderate speed and moderate resolution with low power consumption. The MDAC is implemented with the common switched capacitor method. The 1.5-bit stage greatly simplifies the design of the comparator. The operational amplifier is carefully optimized both in schematic and layout for low power and offset. The prototype chip has been fabricated in a United Microelectronics Corporation (UMC) 0.18-μm 1P6M CMOS process. The core of the ADC occupies only 0.12 mm2. With a 304.7-Hz input and 4-kHz sampling rate, the measured peak SNDR and SFDR are 47.1 dB and 57.8 dBc respectively and its DNL and INL are 0.27 LSB and 0.3 LSB, respectively. The power consumption of the ADC is only 12.5 μW in normal working mode and less than 150 nW in sleep mode.

  6. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process

    SciTech Connect

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-15

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga{sub 0.97}N{sub 0.9}O{sub 0.09} is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga{sub 0.97}N{sub 0.9}O{sub 0.09} of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4 M HCl, 100 °C and pulp density of 100 kg/m{sup 3,} respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. - Highlights: • Waste MOCVD dust is treated through mechanochemical leaching. • GaN is hardly leached, and converted to NaGaO{sub 2} through ball milling and annealing. • Process for gallium recovery from waste MOCVD dust has been developed. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} is revealed. • Solid-state chemistry involved in this process is reported.

  7. Semiconductor structure and devices

    NASA Technical Reports Server (NTRS)

    Dinkel, Nancy A. (Inventor); Goldstein, Bernard (Inventor); Ettenberg, Michael (Inventor)

    1987-01-01

    Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

  8. Numerical analysis of external feedback concepts for spectral stabilization of high-power broad-area semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Holly, Carlo; Hengesbach, Stefan; Traub, Martin; Hoffmann, Dieter

    2014-03-01

    Four different external resonator concepts including VBGs for spectral stabilization of HPDLs are modelled and numerically evaluated to be compared to each other with respect to stabilization efficiency and sensitivity to the "smile-error". The coupled resonators including the external system and the diode laser are solved with a Fox-Li approach. The paper gives a brief summary about the applied simulation model and proceeds with the results for the different feedback concepts. The effective reflectivity, losses in the optical system, losses due to the back-coupling into the waveguide and the averaged optical confinement factor are calculated.

  9. High power, high beam quality laser source with narrow, stable spectra based on truncated-tapered semiconductor amplifier

    NASA Astrophysics Data System (ADS)

    Wang, X.; Erbert, G.; Wenzel, H.; Crump, P.; Eppich, B.; Knigge, S.; Ressel, P.; Ginolas, A.; Maaßdorf, A.; Tränkle, G.

    2013-02-01

    High power diode lasers are increasingly important in many industrial applications. However, an ongoing challenge is to simultaneously obtain high output power, diffraction-limited beam quality and narrow spectral width. One approach to fulfill these requirements is to use a "master oscillator - power amplifier (MOPA)" system. We present recent data on MOPAs using PA designs that have low confinement factor (1%), leading to low modal gain, and low optical loss (<0.5cm-1). Quantum barriers with low refractive index are used to reduce the optical waveguiding due to the active region, which should decrease susceptibility to filament formation. A truncated tapered lateral design was used. Conventional tapered designs have a ridge waveguide (RW) at the entrance of the devices with etched cavity- spoiling grooves at the transition to the tapered gain region. Our amplifier used a truncated tapered design with no RW entrance section. We show that for this approach cavity-spoiling grooves are not necessary, and achieve improved performance when they are omitted, which we attribute to the filament insensitivity of our structure. High beam quality was achieved from a 970nm amplifier with M2 (1/e2) = 1.9, with efficiency of <48% in QCW condition, and <17W diffraction-limited beam maintained in the central lobe. The impact of the in-plane geometrical design was assessed and we show that large surface area is advantageous for device performance. The spectral properties of the amplifier replicated that of the DBRtapered laser, which is used as the master oscillator, with a spectral width of <30pm (FWHM). Design options for further increases in power are presented.

  10. High-Performance electronics at ultra-low power consumption for space applications: From superconductor to nanoscale semiconductor technology

    NASA Technical Reports Server (NTRS)

    Duncan, Robert V.; Simmons, Jerry; Kupferman, Stuart; McWhorter, Paul; Dunlap, David; Kovanis, V.

    1995-01-01

    A detailed review of Sandia's work in ultralow power dissipation electronics for space flight applications, including superconductive electronics, new advances in quantum well structures, and ultra-high purity 3-5 materials, and recent advances in micro-electro-optical-mechanical systems (MEMS) is presented. The superconductive electronics and micromechanical devices are well suited for application in micro-robotics, micro-rocket engines, and advanced sensors.

  11. Tunable UV generation at 286 nm by frequency tripling of a high-power mode-locked semiconductor laser

    SciTech Connect

    Goldberg, L.; Kliner, D.A.V.

    1995-08-01

    We produced ultraviolet radiation by frequency tripling the mode-locked emission of an external cavity laser containing a tapered GaAlAs amplifier gain element. The 429-nm second harmonic produced by a KNbO{sub 3} crystal was sum-frequency mixed with the 858-nm fundamental in a Li{sub 3}BO{sub 5} crystal, generating as much as 50{mu}W of power at 286 nm. {copyright} {ital 1995} {ital Optical} {ital Society} {ital of} {ital America}.

  12. Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers.

    PubMed

    Łaszcz, A; Czerwinski, A; Ratajczak, J; Szerling, A; Phillipp, F; Van Aken, P A; Katcki, J

    2010-03-01

    We report on transmission electron microscopy studies of Au/Pt/Ti/Pt(10-30 nm) contact structures for high power GaAs/InGaAs semiconductor lasers. The studies showed that annealing at 450 degrees C of contact structures causes the reaction of whole Pt with substrate components (Ga and As) and the formation of Pt-GaAs interlayers with smooth interfaces as required for such structures. Annealing of the structures at 470 and 490 degrees C unfavourably affects the contact structure. At this condition, the strong downward diffusion of Au and Pt from the top layers causes a formation of Au-Pt pits, which break the Ti barrier. Transmission electron microscopy observation revealed that Au/Pt/Ti/Pt(10-30 nm) system annealed at 450 degrees C is appropriate for practical applications. The EDS technique used to identify the phase composition in the Pt(30 nm)/GaAs structure (specially produced for the EDS analysis) annealed at 450 degrees C showed that two layers were formed as a result of the reaction of the whole Pt layer with GaAs, and they consist of Ga, Pt and As. The top layer has the highest concentration of Ga. However, the bottom layer, which is close to the substrate, has the highest concentration of As.

  13. SEMICONDUCTOR DEVICES: Gate-structure optimization for high frequency power AlGaN/GaN HEMTs

    NASA Astrophysics Data System (ADS)

    Dongfang, Wang; Tingting, Yuan; Ke, Wei; Xiaojuan, Chen; Xinyu, Liu

    2010-05-01

    The influence of gate-head and gate-source-spacing on the performance of AlGaN/GaN HEMTs was studied. Suggestions are then made to improve the performance of high frequency power AlGaN/GaN HEMTs by optimizing the gate-structure. Reducing the field-plate length can effectively enhance gain, current gain cutoff frequency and maximum frequency of oscillation. By reducing the field-plate length, devices with 0.35 μm gate length have exhibited a current gain cutoff frequency of 30 GHz and a maximum frequency of oscillation of 80 GHz. The maximum frequency of oscillation can be further optimized either by increasing the gate-metal thickness, or by using a τ-shape gate (the gate where the gate-head tends to the source side). Reducing the gate-source spacing can enhance the maximum drain-current and breakdown voltage, which is beneficial in enhancing the maximum output power of AlGaN/GaN HEMTs.

  14. Semiconductor alloys - Structural property engineering

    NASA Technical Reports Server (NTRS)

    Sher, A.; Van Schilfgaarde, M.; Berding, M.; Chen, A.-B.

    1987-01-01

    Semiconductor alloys have been used for years to tune band gaps and average bond lengths to specific applications. Other selection criteria for alloy composition, and a growth technique designed to modify their structural properties, are presently considered. The alloys Zn(1-y)Cd(y)Te and CdSe(y)Te(1-y) are treated as examples.

  15. A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Ettisserry, D. P.; Goldsman, N.; Lelis, A.

    2014-03-01

    In this paper, we present a methodology for the identification and quantification of defects responsible for low channel mobility in 4H-Silicon Carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs). To achieve this, we use an algorithm based on 2D-device simulations of a power MOSFET, density functional simulations, and measurement data. Using physical modeling of carrier mobility and interface traps, we reproduce the experimental I-V characteristics of a 4H-SiC doubly implanted MOSFET through drift-diffusion simulation. We extract the position of Fermi level and the occupied trap density as a function of applied bias and temperature. Using these inputs, our algorithm estimates the number of possible trap types, their energy levels, and concentrations at 4H-SiC/SiO2 interface. Subsequently, we use density functional theory (DFT)-based ab initio simulations to identify the atomic make-up of defects causing these trap levels. We study silicon vacancy and carbon di-interstitial defects in the SiC side of the interface. Our algorithm indicates that the Dit spectrum near the conduction band edge (3.25 eV) is composed of three trap types located at 2.8-2.85 eV, 3.05 eV, and 3.1-3.2 eV, and also calculates their densities. Based on DFT simulations, this work attributes the trap levels very close to the conduction band edge to the C di-interstitial defect.

  16. A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors

    SciTech Connect

    Ettisserry, D. P. Goldsman, N.; Lelis, A.

    2014-03-14

    In this paper, we present a methodology for the identification and quantification of defects responsible for low channel mobility in 4H-Silicon Carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs). To achieve this, we use an algorithm based on 2D-device simulations of a power MOSFET, density functional simulations, and measurement data. Using physical modeling of carrier mobility and interface traps, we reproduce the experimental I-V characteristics of a 4H-SiC doubly implanted MOSFET through drift-diffusion simulation. We extract the position of Fermi level and the occupied trap density as a function of applied bias and temperature. Using these inputs, our algorithm estimates the number of possible trap types, their energy levels, and concentrations at 4H-SiC/SiO{sub 2} interface. Subsequently, we use density functional theory (DFT)-based ab initio simulations to identify the atomic make-up of defects causing these trap levels. We study silicon vacancy and carbon di-interstitial defects in the SiC side of the interface. Our algorithm indicates that the D{sub it} spectrum near the conduction band edge (3.25 eV) is composed of three trap types located at 2.8–2.85 eV, 3.05 eV, and 3.1–3.2 eV, and also calculates their densities. Based on DFT simulations, this work attributes the trap levels very close to the conduction band edge to the C di-interstitial defect.

  17. Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

    NASA Technical Reports Server (NTRS)

    Larsson, Anders G.; Maserjian, Joseph

    1992-01-01

    Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

  18. Screening techniques for high power GaAsP/AlGaAs/GaAs semiconductor diode lasers

    NASA Astrophysics Data System (ADS)

    Wawrzyniak, P.; Kozłlowska, A.; Tomm, J. W.; Maląg, A.; Weik, F.; Teodorczyk, M.; Latoszek, M.

    2005-09-01

    We report on novel evaluation methodology of high-power diode lasers that potentially will increase the reliability level of these devices. The study is carried out for wide-stripe, 808 nm diode lasers with low fast-axis beam divergence that base on a double-barrier single quantum well separate confinement heterostructure. The diodes are assembled in standard packages with base diameter ø = 9 mm. Degradation of diode lasers is a result of the interaction between internal and external factors. Thus, insight into degradation mechanisms is only possible with a complex characterization of the devices. In our analysis we involved standard measurements such as current-voltage, light-current characterizations, as well as advanced methods such as high-resolution thermography. The latter one allows for investigations of thermal properties of diode lasers including fast temperature profiling and defect recognition. We discuss the usefulness of above techniques for screening purposes. Finally we present results of reliability tests of the diode lasers. A correlation between initial tests and lifetest results is shown.

  19. Americans' Average Radiation Exposure

    SciTech Connect

    NA

    2000-08-11

    We live with radiation every day. We receive radiation exposures from cosmic rays, from outer space, from radon gas, and from other naturally radioactive elements in the earth. This is called natural background radiation. It includes the radiation we get from plants, animals, and from our own bodies. We also are exposed to man-made sources of radiation, including medical and dental treatments, television sets and emission from coal-fired power plants. Generally, radiation exposures from man-made sources are only a fraction of those received from natural sources. One exception is high exposures used by doctors to treat cancer patients. Each year in the United States, the average dose to people from natural and man-made radiation sources is about 360 millirem. A millirem is an extremely tiny amount of energy absorbed by tissues in the body.

  20. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If...

  1. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where...

  2. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 120.360 Section...

  3. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents... 46 Shipping 7 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 183.360 Section...

  4. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor-rectifier systems. 129.360 Section...

  5. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a... 46 Shipping 4 2014-10-01 2014-10-01 false Semiconductor rectifier systems. 120.360 Section...

  6. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a... 46 Shipping 4 2012-10-01 2012-10-01 false Semiconductor rectifier systems. 120.360 Section...

  7. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents... 46 Shipping 7 2012-10-01 2012-10-01 false Semiconductor rectifier systems. 183.360 Section...

  8. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents... 46 Shipping 7 2013-10-01 2013-10-01 false Semiconductor rectifier systems. 183.360 Section...

  9. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents... 46 Shipping 7 2014-10-01 2014-10-01 false Semiconductor rectifier systems. 183.360 Section...

  10. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a... 46 Shipping 4 2014-10-01 2014-10-01 false Semiconductor-rectifier systems. 129.360 Section...

  11. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a... 46 Shipping 4 2013-10-01 2013-10-01 false Semiconductor-rectifier systems. 129.360 Section...

  12. 46 CFR 120.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a... 46 Shipping 4 2013-10-01 2013-10-01 false Semiconductor rectifier systems. 120.360 Section...

  13. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a... 46 Shipping 4 2012-10-01 2012-10-01 false Semiconductor-rectifier systems. 129.360 Section...

  14. Wide-Bandgap Semiconductors

    SciTech Connect

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  15. Intra-cavity frequency-doubled mode-locked semiconductor disk laser at 325 nm.

    PubMed

    Bek, Roman; Baumgärtner, Stefan; Sauter, Fabian; Kahle, Hermann; Schwarzbäck, Thomas; Jetter, Michael; Michler, Peter

    2015-07-27

    We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both the gain and the absorber structure contain InP quantum dots (QDs) as active material. In a v-shaped cavity using the semiconductor samples as end mirrors, a beta barium borate (BBO) crystal is placed in front of the semiconductor saturable absorber mirror (SESAM) for pulsed UV laser emission in one of the two outcoupled beams. Autocorrelation (AC) measurements at the fundamental wavelength reveal a FWHM pulse duration of 1.22ps. With a repetition frequency of 836MHz, the average output power is 10mW per beam for the red emission and 0.5mW at 325nm.

  16. Nonlinear fibre-optic devices pumped by semiconductor disk lasers

    SciTech Connect

    Chamorovskiy, A Yu; Okhotnikov, Oleg G

    2012-11-30

    Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

  17. Overview of the Lucia laser program: toward 100-Joules, nanosecond-pulse, kW averaged power based on ytterbium diode-pumped solid state laser

    NASA Astrophysics Data System (ADS)

    Chanteloup, J.-C.; Yu, H.; Bourdet, G.; Dambrine, C.; Ferre, S.; Fulop, A.; Le Moal, S.; Pichot, A.; Le Touze, G.; Zhao, Z.

    2005-04-01

    We present the current status of the Lucia laser being built at the LULI laboratory, the national civil facility for intense laser matter interaction in France. This diode pumped laser will deliver a 100 Joules, 10 ns, 10 Hz pulse train from Yb:YAG using 4400 power diode laser bars. We first focus on the amplifier stage by describing the reasons for selecting our extraction architecture. Thermal issues and solutions for both laser and pumping heads are then described. Finally, we emphasize more specifically the need for long-lifetime high-laser-damage-threshold coatings and optics.

  18. NEW ACTIVE MEDIA AND ELEMENTS OF LASER SYSTEMS: Selection of the discharge-tube material for a nitrogen longitudinal-discharge ultraviolet laser to ensure the maximum average radiation power

    NASA Astrophysics Data System (ADS)

    Il'yushko, V. G.; Kravchenko, Viktor F.

    1987-11-01

    A theoretical and experimental analysis was made of the influence of the material of the surface of a discharge tube on the frequency characteristics of a molecular nitrogen laser emitting ultraviolet radiation under conditions when the influence of the translational temperature of the gas could be ignored. The experimental dependences of the average output power on the repetition frequency of the excitation pulses yielded the rate constants of the deactivation of vibrationally excited molecules and the accommodation coefficients of different surfaces. It was found that the discharge tube materials ensuring the maximum average output power and the highest repetition frequency of the excitation pulses in the case of lasers utilizing ultraviolet transitions in nitrogen molecules are substances with the highest accommodation coefficients and thermal diffusivity. These requirements were satisfied best by copper, aluminum, and graphite. The advantages of these materials were utilized in segmented metal discharge tubes.

  19. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    PubMed Central

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-01-01

    A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

  20. Watt-level passively Q-switched heavily Er(3+)-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror.

    PubMed

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-01-01

    A diode-cladding pumped mid-infrared passively Q-switched Er(3+)-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

  1. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    NASA Astrophysics Data System (ADS)

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-05-01

    A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail.

  2. 500 kHz OPCPA delivering tunable sub-20 fs pulses with 15 W average power based on an all-ytterbium laser.

    PubMed

    Puppin, Michele; Deng, Yunpei; Prochnow, Oliver; Ahrens, Jan; Binhammer, Thomas; Morgner, Uwe; Krenz, Marcel; Wolf, Martin; Ernstorfer, Ralph

    2015-01-26

    An optical parametric chirped pulse amplifier fully based on Yb lasers at 500 kHz is described. Passive optical-synchronization is achieved between a fiber laser-pumped white-light and a 515 nm pump produced with a 200 W picosecond Yb:YAG InnoSlab amplifier. An output power up to 19.7 W with long-term stability of 0.3% is demonstrated for wavelength tunable pulses between 680 nm and 900 nm and spectral stability of 0.2%; 16.5 W can be achieved with a bandwidth supporting 5.4 fs pulses. We demonstrate compression of 30 µJ pulses to sub-20 fs duration with a prism compressor, suitable for high harmonic generation. PMID:25835905

  3. Narrow linewidth, single mode 3 kW average power from a directly diode pumped ytterbium-doped low NA fiber amplifier.

    PubMed

    Beier, F; Hupel, C; Nold, J; Kuhn, S; Hein, S; Ihring, J; Sattler, B; Haarlammert, N; Schreiber, T; Eberhardt, R; Tünnermann, A

    2016-03-21

    We report on a newly designed and fabricated ytterbium-doped large mode area fiber with an extremely low NA (~0.04) and related systematic investigations on fiber parameters that crucially influence the mode instability threshold. The fiber is used to demonstrate a narrow linewidth, continuous wave, single mode fiber laser amplifier emitting a maximum output power of 3 kW at a wavelength of 1070 nm without reaching the mode-instability threshold. A high slope efficiency of 90 %, excellent beam quality, high temporal stability, and an ASE suppression of 70 dB could be reached with a signal linewidth of only 170 pm. PMID:27136795

  4. Neutron resonance averaging

    SciTech Connect

    Chrien, R.E.

    1986-10-01

    The principles of resonance averaging as applied to neutron capture reactions are described. Several illustrations of resonance averaging to problems of nuclear structure and the distribution of radiative strength in nuclei are provided. 30 refs., 12 figs.

  5. Paradoxes in Averages.

    ERIC Educational Resources Information Center

    Mitchem, John

    1989-01-01

    Examples used to illustrate Simpson's paradox for secondary students include probabilities, university admissions, batting averages, student-faculty ratios, and average and expected class sizes. Each result is explained. (DC)

  6. COMPONENTS OF LASER SYSTEMS AND STABILITY PROBLEMS: Influence of interference coatings on the optical strength of semiconductor laser mirrors

    NASA Astrophysics Data System (ADS)

    Stolyarov, S. N.

    1988-08-01

    Accurate analytic expressions are given and proven for the coefficients of reflection from a coating consisting of an arbitrary number of quarter-wave layers. These are used to show that the amplitude of the field at a "cleaved" mirror in a semiconductor laser decreases appreciably if the refractive indices of the neighboring layers in the interference coating differ substantially. The influence of these coatings on the output power of the laser radiation is studied. An analysis is made of the longitudinal field distribution inside a semiconductor laser and it is established that the true field at the mirrors differs appreciably from the averaged one.

  7. Semiconductor Laser Low Frequency Noise Characterization

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Logan, Ronald T.

    1996-01-01

    This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

  8. FY2005 Progress Summary and FY2006 Program Plan Statement of Work and Deliverables for Development of High Average Power Diode-Pumped Solid State Lasers, and Complementary Technologies, for Applications in Energy and Defense

    SciTech Connect

    Ebbers, C

    2006-03-24

    The primary focus this year was to operate the system with two amplifiers populated with and pumped by eight high power diode arrays. The system was operated for extended run periods which enabled average power testing of components, diagnostics, and controls. These tests were highly successful, with a demonstrated energy level of over 55 joules for 4 cumulative hours at a repetition rate of 10 Hz (average power 0.55 kW). In addition, high average power second harmonic generation was demonstrated, achieving 227 W of 523.5 nm light (22.7 J, 10 Hz, 15 ns, 30 minutes) Plans to achieve higher energy levels and average powers are in progress. The dual amplifier system utilizes a 4-pass optical arrangement. The Yb:S-FAP slabs were mounted in aerodynamic aluminum vane structures to allow turbulent helium gas flow across the faces. Diagnostic packages that monitored beam performance were deployed during operation. The laser experiments involved injecting a seed beam from the front end into the system and making four passes through both amplifiers. Beam performance diagnostics monitored the beam on each pass to assess system parameters such as gain and nearfield intensity profiles. This year, an active mirror and wavefront sensor were procured and demonstrated in an off-line facility. The active mirror technology can correct for low order phase distortions at user specified operating conditions (such as repetition rates different than 10 Hz) and is a complementary technology to the static phase plates used in the system for higher order distortions. A picture of the laser system with amplifier No.2 (foreground) and amplifier No.1 (background) is shown in Fig. 1.0.1.1. The control system and diagnostics were recently enhanced for faster processing and allow remote operation of the system. The growth and fabrication of the Yb:S-FAP slabs constituted another major element of our program objectives. Our goal was to produce at least fourteen 4x6 cm2 crystalline slabs. These

  9. Approximate Analysis of Semiconductor Laser Arrays

    NASA Technical Reports Server (NTRS)

    Marshall, William K.; Katz, Joseph

    1987-01-01

    Simplified equation yields useful information on gains and output patterns. Theoretical method based on approximate waveguide equation enables prediction of lateral modes of gain-guided planar array of parallel semiconductor lasers. Equation for entire array solved directly using piecewise approximation of index of refraction by simple functions without customary approximation based on coupled waveguid modes of individual lasers. Improved results yield better understanding of laser-array modes and help in development of well-behaved high-power semiconductor laser arrays.

  10. Anomalous Charge Transport in Disordered Organic Semiconductors

    SciTech Connect

    Muniandy, S. V.; Woon, K. L.; Choo, K. Y.

    2011-03-30

    Anomalous charge carrier transport in disordered organic semiconductors is studied using fractional differential equations. The connection between index of fractional derivative and dispersion exponent is examined from the perspective of fractional Fokker-Planck equation and its link to the continuous time random walk formalism. The fractional model is used to describe the bi-scaling power-laws observed in the time-of flight photo-current transient data for two different types of organic semiconductors.

  11. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  12. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  13. Experimental study and chemical application of GaAs semiconductor laser treating trigeminal neuralgia

    NASA Astrophysics Data System (ADS)

    Qiu, Ke-Qum; Cao, Shu-Chen; Wang, Hu-Zhong; Wang, Ke-Ning; Xiao, Ton-Ha; Shen, Ke-Wei

    1993-03-01

    GaAs semiconductor laser was used to treat trigeminal neuralgia with an effective rate of 91.1%, and no side effects were found in 67 cases. Changes in and the recovery of the trigeminal nerve cell were studied with light and electromicroscope. Discussed in this article are the time length and quantity of laser treatment with low power. Experimental study and clinical application of the GaAs semiconductor laser have been carried out in our department since 1987. One-hundred-fifteen patients with various diseases in the maxillofacial region (including 67 cases of trigeminal neuralgia) have been treated with satisfactory effects and without any side-effects. The wavelength of the laser is 904 mu, the largest pulse length is 200 mu, and the average power is 2000 HZ.

  14. Spatial filters for high average power lasers

    DOEpatents

    Erlandson, Alvin C

    2012-11-27

    A spatial filter includes a first filter element and a second filter element overlapping with the first filter element. The first filter element includes a first pair of cylindrical lenses separated by a first distance. Each of the first pair of cylindrical lenses has a first focal length. The first filter element also includes a first slit filter positioned between the first pair of cylindrical lenses. The second filter element includes a second pair of cylindrical lenses separated by a second distance. Each of the second pair of cylindrical lenses has a second focal length. The second filter element also includes a second slit filter positioned between the second pair of cylindrical lenses.

  15. Drastic emission-spectra changes in a semiconductor laser owing to optical feedback from an optical connector

    SciTech Connect

    Matsuura, M.; Tanifuji, T.; Yamamoto, Y.

    1986-07-01

    The time-averaged longitudinal-mode power of a semiconductor laser coupled to fiber changes drastically when an external force is applied to a multimode fiber terminated with an optical connector. No emission-spectra changes have been observed in the case of a single-mode fiber. This phenomenon is considered to be induced by the wavelength-dependent change of the reflected field speckle intensity coupled into the laser-active region.

  16. Semiconductor technology program. Progress briefs

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1979-01-01

    The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.

  17. Semiconductor ohmic contact

    NASA Technical Reports Server (NTRS)

    Hawrylo, Frank Zygmunt (Inventor); Kressel, Henry (Inventor)

    1977-01-01

    A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.

  18. The average enzyme principle.

    PubMed

    Reznik, Ed; Chaudhary, Osman; Segrè, Daniel

    2013-09-01

    The Michaelis-Menten equation for an irreversible enzymatic reaction depends linearly on the enzyme concentration. Even if the enzyme concentration changes in time, this linearity implies that the amount of substrate depleted during a given time interval depends only on the average enzyme concentration. Here, we use a time re-scaling approach to generalize this result to a broad category of multi-reaction systems, whose constituent enzymes have the same dependence on time, e.g. they belong to the same regulon. This "average enzyme principle" provides a natural methodology for jointly studying metabolism and its regulation.

  19. FY2002 Progress Summary Program Plan, Statement of Work and Deliverables for Development of High Average Power Diode-Pumped Solid State Lasers, and Complementary Technologies, for Applications in Energy and Defense

    SciTech Connect

    Bayramian, A; Bibeau, C; Beach, R; Behrendt, B; Ebbers, C; Latkowski, J; Meier, W; Payne, S; Perkins, J; Schaffers, K; Skulina, K; Ditmire, T; Kelly, J; Waxer, L; Rudi, P; Randles, M; Witter, D; Meissner, H; Merissner, O

    2001-12-13

    The High Average Power Laser Program (HAPL) is a multi-institutional, coordinated effort to develop a high-energy, repetitively pulsed laser system for Inertial Fusion Energy and other DOE and DOD applications. This program is building a laser-fusion energy base to complement the laser-fusion science developed by DOE Defense programs over the past 25 years. The primary institutions responsible for overseeing and coordinating the research activities are the Naval Research Laboratory (NRL) and LLNL. The current LLNL proposal is a companion proposal to that submitted by NRL, for which the driver development element is focused on the krypton fluoride excimer laser option. Aside from the driver development aspect, the NRL and LLNL companion proposals pursue complementary activities with the associated rep-rated laser technologies relating to target fabrication, target injection, final optics, fusion chamber, materials and power plant economics. This report requests continued funding in FY02 to support LLNL in its program to build a 1kW, 100J, diode-pumped, crystalline laser. In addition, research in high gain laser target design, fusion chamber issues and survivability of the final optic element will be pursued. These technologies are crucial to the feasibility of inertial fusion energy power plants and also have relevance in rep-rated stewardship experiments.

  20. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  1. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  2. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  3. Average density in cosmology

    SciTech Connect

    Bonnor, W.B.

    1987-05-01

    The Einstein-Straus (1945) vacuole is here used to represent a bound cluster of galaxies embedded in a standard pressure-free cosmological model, and the average density of the cluster is compared with the density of the surrounding cosmic fluid. The two are nearly but not quite equal, and the more condensed the cluster, the greater the difference. A theoretical consequence of the discrepancy between the two densities is discussed. 25 references.

  4. New, rugged, high power Cockcroft-Walton power supply

    SciTech Connect

    Hinkson, J.; Behrsing, G.; Hazelton, E.; Hearn, W.; Lancaster, H.

    1981-03-01

    A ten foot (3 m), ten-stage air-insulated Crockcroft-Walton power supply designed and built at LBL has been tested to 900 kV at the SuperHILAC. Operating at 80 kHz, the power supply features low ripple, moderate stored energy, 10 ma average current, and no bouncer requirement for pulsed loads. Other system features include: inexpensive generating voltmeters and a capacitive pick off for monitoring and regulation in lieu of costly resistance dividers, home-made semiconductor rectifier modules, excellent component protection against sparking, and easy maintenance. This report describes design, construction, and testing of the high voltage system.

  5. 46 CFR 183.360 - Semiconductor rectifier systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...) Meet Sections 35.84.2 and 35.84.4 of the ABS Steel Vessel Rules (incorporated by reference; see 46 CFR... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor...

  6. Optical correlators with fast updating speed using photorefractive semiconductor materials

    NASA Technical Reports Server (NTRS)

    Gheen, Gregory; Cheng, Li-Jen

    1988-01-01

    The performance of an updatable optical correlator which uses a photorefractive semiconductor to generate real-time matched filters is discussed. The application of compound semiconductors makes possible high-speed operation and low optical input intensities. The Bragg diffraction is considered, along with the speed and power characteristics of these materials. Experimental results on photorefractive GaAs are presented.

  7. Synthesis of semiconductor nanoparticles.

    PubMed

    Chen, Xianfeng; Dobson, Peter J

    2012-01-01

    Here, we describe typical methods and provide detailed experimental protocols for synthesizing and processing various semiconductor nanoparticles which have potential application in biology and medicine. These include synthesis of binary semiconductor nanoparticles; core@shell nanoparticles and alloyed nanoparticles; size-selective precipitation to obtain monodisperse nanoparticles; and strategies for phase transfer of nanoparticles from organic solution to aqueous media. PMID:22791427

  8. Production of 35S for a Liquid Semiconductor Betavoltaic

    SciTech Connect

    Meier, David E.; Garnov, A. Y.; Robertson, J. D.; Kwon, J. W.; Wacharasindhu, T.

    2009-10-01

    The specific energy density from radioactive decay is five to six orders of magnitude greater than the specific energy density in conventional chemical battery and fuel cell technologies. We are currently investigating the use of liquid semiconductor based betavoltaics as a way to directly convert the energy of radioactive decay into electrical power and potentially avoid the radiation damage that occurs in solid state semiconductor devices due to non-ionizing energy loss. Sulfur-35 was selected as the isotope for the liquid semiconductor demonstrations because it can be produced in high specific activity and it is chemically compatible with known liquid semiconductor media.

  9. Fabrication and Characterization of Edge-Emitting Semiconductor Lasers

    NASA Astrophysics Data System (ADS)

    Song, Junyeob

    The semiconductor laser was invented in 1962, and has recently become ubiquitous in modern life. This thesis focuses on the development of a semiconductor laser fabricating process which utilizes semiconductor manufacturing technology in a cleanroom environment including photolithography, etching, deposition, and bonding processes. A photomask for patterning is designed, recipes of photolithography process and etching process are developed with experiments. This work gives how to develop the process of fabrication and determine the parameters for each processes. A series of semiconductor laser devices are then fabricated using the developed process and characterization is performed to assess device performance with industrial standard methods. A fabricated device has 18W power and 11% conversion efficiency.

  10. Power Switching Device

    NASA Technical Reports Server (NTRS)

    1993-01-01

    The MOS-Controlled Thyristor is a new type of power switching device for faster and more efficient control and management of power electronics. It enables power electronic switching at frequencies of 50 to 100 thousand times a second with much lower power losses than other semiconductor devices. Advantages include electric power savings and smaller space. The device is used in motor and power controllers, AC & DC motor drives and induction heating. Early development was supported by Lewis Research Center (LEW) and other agencies. General Electric''s power semiconductor operation, the initial NASA contractor, was later purchased by Harris Semiconductor.

  11. SEMICONDUCTOR DEVICES: A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate

    NASA Astrophysics Data System (ADS)

    Dongfang, Wang; Xiaojuan, Chen; Xinyu, Liu

    2010-02-01

    This paper describes the first domestic Ku-band power AlGaN/GaN HEMT fabricated on a sapphire substrate. The device with a gate width of 0.5 mm and a gate length of 0.35 μm has exhibited an extrinsic current gain cutoff frequency of 20 GHz and an extrinsic maximum frequency of oscillation of 75 GHz. Under VDS = 30 V, CW operating conditions at 14 GHz, the device exhibits a linear gain of 10.4 dB and a 3-dB-gain-compressed output power of 1.4 W with a power added efficiency of 41%. Under pulse operating conditions, the linear gain is 12.8 dB and the 3-dB-compressed output power is 1.7 W. The power density reaches 3.4 W/mm.

  12. April 25, 2003, FY2003 Progress Summary and FY2002 Program Plan, Statement of Work and Deliverables for Development of High Average Power Diode-Pumped Solid State Lasers,and Complementary Technologies, for Applications in Energy and Defense

    SciTech Connect

    Meier, W; Bibeau, C

    2005-10-25

    The High Average Power Laser Program (HAPL) is a multi-institutional, synergistic effort to develop inertial fusion energy (IFE). This program is building a physics and technology base to complement the laser-fusion science being pursued by DOE Defense programs in support of Stockpile Stewardship. The primary institutions responsible for overseeing and coordinating the research activities are the Naval Research Laboratory (NRL) and Lawrence Livermore National Laboratory (LLNL). The current LLNL proposal is a companion document to the one submitted by NRL, for which the driver development element is focused on the krypton fluoride excimer laser option. The NRL and LLNL proposals also jointly pursue complementary activities with the associated rep-rated laser technologies relating to target fabrication, target injection, final optics, fusion chamber, target physics, materials and power plant economics. This proposal requests continued funding in FY03 to support LLNL in its program to build a 1 kW, 100 J, diode-pumped, crystalline laser, as well as research into high gain fusion target design, fusion chamber issues, and survivability of the final optic element. These technologies are crucial to the feasibility of inertial fusion energy power plants and also have relevance in rep-rated stewardship experiments. The HAPL Program pursues technologies needed for laser-driven IFE. System level considerations indicate that a rep-rated laser technology will be needed, operating at 5-10 Hz. Since a total energy of {approx}2 MJ will ultimately be required to achieve suitable target gain with direct drive targets, the architecture must be scaleable. The Mercury Laser is intended to offer such an architecture. Mercury is a solid state laser that incorporates diodes, crystals and gas cooling technologies.

  13. Textured semiconductors for enhanced photoconductive terahertz emission

    NASA Astrophysics Data System (ADS)

    Collier, Christopher M.; Krupa, Jeffrey D. A.; Hristovski, Ilija R.; Stirling, Trevor J.; Bergen, Mark H.; Holzman, Jonathan F.

    2016-02-01

    There are severe limitations that photoconductive (PC) terahertz (THz) antennas experience due to Joule heating and ohmic losses, which cause premature device breakdown through thermal runaway. In response, this work introduces PC THz antennas utilizing textured InP semiconductors. These textured InP semiconductors exhibit high surface recombination properties and have shortened carrier lifetimes which limit residual photocurrents in the picoseconds following THz pulse emission—ultimately reducing Joule heating and ohmic losses. Fine- and coarse-textured InP semiconductors are studied and compared to a smooth-textured InP semiconductor, which provides a baseline. The surface area ratio (measuring roughness) of the smooth-, fine-, and coarse-textured InP semiconductors is resolved through a computational analysis of SEM images and found as 1.0 +/- 0.1, 2.9 +/- 0.4, and 4.3 +/- 0.6, respectively. The carrier lifetimes of the smooth-, fine-, and coarse-textured InP semiconductors are found as respective values of 200 +/- 6, 100 +/- 10, and 20 +/- 3 ps when measured with a pump-probe experimental system. The emitted THz electric fields and corresponding consumption of photocurrent are measured with a THz experimental setup. The temporal and spectral responses of PC THz antennas made with each of the textured InP semiconductors are found to be similar; however, the consumption of photocurrent (relating to Joule heating and ohmic losses) is greatly diminished for the semiconductors that are textured. The findings of this work can assist in engineering of small-scale PC THz antennas for high-power operation, where they are extremely vulnerable to premature device breakdown through thermal runaway.

  14. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  15. Fabrication Processes for Surface-Emitting via External 45-DEGREE Reflectors, High-Power via Arrayed Ridge - Single-Mode Phase-Locked Aluminum Gallium Arsenide/gallium Arsenide Semiconductor Laser Sources.

    NASA Astrophysics Data System (ADS)

    Porkolab, Gyorgy Arpad

    The fabrication of monolithically integrated configurations of semiconductor lasers incorporating multiple functions is still an open issue today in engineering. A useful set of functions to integrate are: surface-emitting, high -power, phase-locked, single-mode, and collimated laser beam output. In this work new materials and advanced fabrication processes are developed for integrating the first four of the five functions listed. The interest in semiconductor lasers is due to their greater than 90% internal quantum efficiency in converting current-flux to photon-flux, their small size and weight, and their wavelength range from 400 to 1,550 nm. Multitudes of applications are possible for semiconductor laser sources ranging from the low-volume market of satellite-based communications systems to the high-volume market of image display screens. Semimetallic amorphous carbon (SMAC) thin film is introduced as an etch mask for chemically assisted ion beam etching (CAIBE) resulting in smooth etched facets in AlGaAs/GaAs at normal- and 45-degrees- incidence angles. A self-aligned etch technique is introduced using 4 separate photoresist selector-masks on top of a fixed SMAC master -mask on top of the AlGaAs/GaAs substrate to perform 4 separate CAIBE etches at 3 different angles and to 3 different depths to create self-aligned 3-dimensional microstructures of 1.3-μm deep ridge waveguides (RWG), 6-μm deep laser facets, and 11- μm long back-to-back 45-degree reflectors arranged in 3 by 100 arrays. Trenches on topside and underside of laser facets are introduced to deflect current away from laser facets. Silicon-rich nitro-oxide thin film is introduced as triple-use encapsulation to provide chemical passivation of AlGaAs/GaAs, optical anti-reflection coating by being refractive-index matched to AlGaAs/GaAs, and electrical insulation. A pincer-action sample-holder for CAIBE is introduced allowing samples to heat up by ion beam heating. Various surface preparations

  16. A new very high voltage semiconductor switch

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1985-01-01

    A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

  17. Semiconductor active plasmonics

    NASA Astrophysics Data System (ADS)

    Mendach, Stefan; Nötzel, Richard

    2013-12-01

    Plasmonics is a research area in nanophotonics attracting increasing interest due to the potential applications in sensing and detecting, sub-wavelength confinement of light, integrated circuits, and many others. In particular, when plasmonic structures such as metal nanostructures or highly doped semiconductor particles are combined with active semiconductor materials and nanostructures, novel exciting physics and applications arise. This special section on semiconductor active plasmonics covers several of the most important and complementary directions in the field. First is the modification of the optical properties of a semiconductor nanostructure due to the close proximity of a metallic film or nanostructure. These arise from the formation hybrid plasmon/exciton states and may lead to enhanced spontaneous emission rates, directional far field emission patterns, strong coupling phenomena, and many more. Second is the realization of sub-wavelength scale nanolasers by coupling a semiconductor gain medium with a plasmonic metallic cavity. Particular emphasis is given on the major technical challenges in the fabrication of these nanolasers, such as device patterning, surface passivation, and metal deposition. While the above topics address mainly active structures and devices operating in the visible or near-infrared wavelength region, in the third, the enhanced THz extinction by periodic arrays of semiconductor particles is discussed. This is based on the build-up of surface plasmon resonances in the doped semiconductor particles which can be resonantly coupled and widely tuned by the carrier density in the semiconductor. We believe these highly diverse aspects give insight into the wide variety of new physics and applications that semiconductor active plasmonics is offering. Finally, we would like to thank the IOP editorial staff, in particular Alice Malhador, for their support, and we would also like to thank the contributors for their efforts and participation

  18. Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser

    SciTech Connect

    Sokolova, Z. N. Pikhtin, N. A.; Tarasov, I. S.; Asryan, L. V.

    2015-11-15

    The operating characteristics of a semiconductor quantum-well laser calculated using three models are compared. These models are (i) a model not taking into account differences between the electron and hole parameters and using the electron parameters for both types of charge carriers; (ii) a model, which does not take into account differences between the electron and hole parameters and uses the hole parameters for both types of charge carriers; and (iii) a model taking into account the asymmetry between the electron and hole parameters. It is shown that, at the same velocity of electron and hole capture into an unoccupied quantum well, the laser characteristics, obtained using the three models, differ considerably. These differences are due to a difference between the filling of the electron and hole subbands in a quantum well. The electron subband is more occupied than the hole subband. As a result, at the same velocities of electron and hole capture into an empty quantum well, the effective electron-capture velocity is lower than the effective hole-capture velocity. Specifically, it is shown that for the laser structure studied the hole-capture velocity of 5 × 10{sup 5} cm/s into an empty quantum well and the corresponding electron-capture velocity of 3 × 10{sup 6} cm/s into an empty quantum well describe the rapid capture of these carriers, at which the light–current characteristic of the laser remains virtually linear up to high pump-current densities. However, an electron-capture velocity of 5 × 10{sup 5} cm/s and a corresponding hole-capture velocity of 8.4 × 10{sup 4} cm/s describe the slow capture of these carriers, causing significant sublinearity in the light–current characteristic.

  19. SEMICONDUCTOR DEVICES: An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    NASA Astrophysics Data System (ADS)

    Hongbin, Pu; Lin, Cao; Jie, Ren; Zhiming, Chen; Yagong, Nan

    2010-04-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively.

  20. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  1. Flicker noise in hot carrier semiconductors

    SciTech Connect

    Orlov, V.B.; Yakimov, A.V.

    1988-04-01

    Change in electrical flicker noise power in hot carrier semiconductors can be explained by fluctuations in the intensity of impurity scattering, which contradicts the Hooge-Kleinpenning-Vandamme hypothesis, which relates flicker conduction noise to lattice scattering. It has been shown that such noise can be caused by fluctuations in the effective number of neutral scattering centers within the semiconductor volume. This source modulates carrier mobility, i.e., mobility fluctuations are a secondary effect. We offer herein an explanation of known experimental data on 1/f noise in silicon and gallium arsenide.

  2. Closing photoconductive semiconductor switches

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Hjalmarson, H.P.; O'Malley, M.W.

    1989-01-01

    One of the most important limitations of Photoconductive Semiconductor Switches (PCSS) for pulsed power applications is the high laser powers required to activate the switches. In this paper, we discuss recent developments on two different aspects of GaAs PCSS that result in reductions in laser power by a factor of nearly 1000. The advantages of using GaAs over Si are many. First of all, the resistivity of GaAs can be orders of magnitude higher than that of the highest resistivity Si material, thus allowing GaAs switches to withstand dc voltages without thermal runaway. Secondly, GaAs has a higher carrier mobility than Si and, thus, is more efficient (per carrier). Finally, GaAs switches can have naturally fast (ns) opening times at room temperature and low fields, microsecond opening times at liquid nitrogen temperature of 77 K, or, on demand, closing and opening at high fields and room temperature by a mechanism called lock-on (see Ref. 1). By contrast, Si switches typically opening times of milliseconds. The amount of laser light required to trigger GaAs for lock-on, or at 77 K, is about three orders of magnitude lower than at room temperature. In this paper we describe the study of lock-on in GaAs and InP, as well as switching of GaAs at 77 K. We shall show that when GaAs is switched at 77 K, the carrier lifetime is about three orders of magnitude longer than it is at room temperature. We shall explain the change in lifetime in terms of the change in electron capture cross section of the deep levels in GaAs (these are defect or impurity levels in the band gap). In the second section, we describe the lock-on effect, now seen in GaAs and InP, and at fields as high as 70 kV/cm. We show how lock-on can be tailored by changing the GaAs temperature or by neutron bombardment. In the third section, we discuss possible lock-on mechanisms. 5 refs., 5 figs.

  3. SLM based semiconductor maskwriter

    NASA Astrophysics Data System (ADS)

    Diez, Steffen; Jehle, Achim

    2015-09-01

    The high-end semiconductor mask fabrication is dominated by e-beam technology. But still more than 50% of all semiconductor masks are produced by laser writers. The current laser writers are based on the same technology that was used 25 years ago. They are reliable and fast but not very economical. Heidelberg Instruments has developed a new economical and fast laser writer based on the latest technologies.

  4. A hybrid magnetic/complementary metal oxide semiconductor process design kit for the design of low-power non-volatile logic circuits

    NASA Astrophysics Data System (ADS)

    Di Pendina, G.; Prenat, G.; Dieny, B.; Torki, K.

    2012-04-01

    Since the advent of the MOS transistor, the performance of microelectronic circuits has followed Moore's law, stating that their speed and density would double every 18 months. Today, this trend tends to get out of breath: the continuously decreasing size of devices and increasing operation frequency result in power consumption and heating issues. Among the solutions investigated to circumvent these limitations, the use of non-volatile devices appears particularly promising. It allows easing, for example, the power gating technique, which consists in cutting-off the power supply of inactive blocks without losing information, drastically reducing the standby power consumption. In this approach, the advantages of magnetic tunnel junctions (MTJs) compared with other non-volatile devices allow one to design hybrid CMOS/magnetic circuits with high performance and new functionalities. Designing such circuits requires integrating MTJs in standard microelectronics design suites. This is performed by means of a process design kit (PDK) for the hybrid CMOS/magnetic technology. We present here a full magnetic PDK, which contains a compact model of the MTJ for electrical simulation, technology files for layout and physical verifications, and standard cells for the design of complex logic circuits and which is compatible with standard design suites. This PDK allows designers to accurately and comfortably design high-performance hybrid CMOS/magnetic logic circuits in the same way as standard CMOS circuits.

  5. Strained-bond semiconductors

    NASA Astrophysics Data System (ADS)

    Dow, John D.

    1994-05-01

    Theories of strained-bond semiconductors and superconductors have been developed that promise to have significant impact on future electronic devices of interest to the Air Force. These include: (1) development of a theory of high-temperature superconductivity based on the idea of strained-layer superlattices, (2) elucidation of the physics of doping in Type-2 semiconductor superlattices, which is now central to the development of high-speed field-effect transistors, (3) a theory of dimerization and reconstruction on (001) semiconductor surfaces, (4) theory of Mobius transforms as applied to physics and remote sensing, (5) new understanding of how defects affect the vibrational properties of semiconductors, (6) new methods of efficiently computing the trajectories of atoms in semiconductors by a priori molecular dynamics, (7) elucidation of the criteria affecting quantum-well luminescence from Si, (8) models of the effects of vacancies in large-gap Al(x)Ga(1-x)N alloys, (9) physics of rare-earth-doped silicon, (10) models of Co adsorption to silicon surfaces, (11) theories of how defects affect the properties of large band-gap superlattices, and (12) models of the effects of electronic structure on the properties of semiconductors.

  6. Model averaging in linkage analysis.

    PubMed

    Matthysse, Steven

    2006-06-01

    Methods for genetic linkage analysis are traditionally divided into "model-dependent" and "model-independent," but there may be a useful place for an intermediate class, in which a broad range of possible models is considered as a parametric family. It is possible to average over model space with an empirical Bayes prior that weights models according to their goodness of fit to epidemiologic data, such as the frequency of the disease in the population and in first-degree relatives (and correlations with other traits in the pleiotropic case). For averaging over high-dimensional spaces, Markov chain Monte Carlo (MCMC) has great appeal, but it has a near-fatal flaw: it is not possible, in most cases, to provide rigorous sufficient conditions to permit the user safely to conclude that the chain has converged. A way of overcoming the convergence problem, if not of solving it, rests on a simple application of the principle of detailed balance. If the starting point of the chain has the equilibrium distribution, so will every subsequent point. The first point is chosen according to the target distribution by rejection sampling, and subsequent points by an MCMC process that has the target distribution as its equilibrium distribution. Model averaging with an empirical Bayes prior requires rapid estimation of likelihoods at many points in parameter space. Symbolic polynomials are constructed before the random walk over parameter space begins, to make the actual likelihood computations at each step of the random walk very fast. Power analysis in an illustrative case is described. (c) 2006 Wiley-Liss, Inc. PMID:16652369

  7. XAFS in dilute magnetic semiconductors.

    PubMed

    Sun, Zhihu; Yan, Wensheng; Yao, Tao; Liu, Qinghua; Xie, Yi; Wei, Shiqiang

    2013-10-14

    X-Ray absorption fine structure (XAFS) spectroscopy has experienced a rapid development in the last four decades and has proved to be a powerful structure characterization technique in the study of local environments in condensed matter. In this article, we first introduce the XAFS basic principles including theory, data analysis and experiment in some detail. Then we attempt to make a review on the applications of XAFS to the study of atomic and electronic structure in dilute magnetic semiconductor (DMS) systems. The power of XAFS in characterizing this interesting material system, such as determining the occupation sites and distribution of the dopants, detecting the presence of metal clusters or secondary phases, as well as identifying the defect types and dopant valence, will be illuminated by selected examples. This review should be of interest both to newcomers in the DMS field and to an interdisciplinary community of researchers working in synthesis, characterization and utilization of DMS materials. PMID:23884341

  8. XAFS in dilute magnetic semiconductors.

    PubMed

    Sun, Zhihu; Yan, Wensheng; Yao, Tao; Liu, Qinghua; Xie, Yi; Wei, Shiqiang

    2013-10-14

    X-Ray absorption fine structure (XAFS) spectroscopy has experienced a rapid development in the last four decades and has proved to be a powerful structure characterization technique in the study of local environments in condensed matter. In this article, we first introduce the XAFS basic principles including theory, data analysis and experiment in some detail. Then we attempt to make a review on the applications of XAFS to the study of atomic and electronic structure in dilute magnetic semiconductor (DMS) systems. The power of XAFS in characterizing this interesting material system, such as determining the occupation sites and distribution of the dopants, detecting the presence of metal clusters or secondary phases, as well as identifying the defect types and dopant valence, will be illuminated by selected examples. This review should be of interest both to newcomers in the DMS field and to an interdisciplinary community of researchers working in synthesis, characterization and utilization of DMS materials.

  9. Semimetal/Semiconductor Nanocomposites for Thermoelectrics

    SciTech Connect

    Lu, Hong; Burke, Peter G.; Gossard, Arthur C.; Zeng, Gehong; Ramu, Ashok T.; Bahk, Je-Hyeong; Bowers, John E.

    2011-04-15

    In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:InxGa1-xSb as a promising p-type thermoelectric material. Nano­structures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By codoping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μm thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed.

  10. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  11. Dissociating Averageness and Attractiveness: Attractive Faces Are Not Always Average

    ERIC Educational Resources Information Center

    DeBruine, Lisa M.; Jones, Benedict C.; Unger, Layla; Little, Anthony C.; Feinberg, David R.

    2007-01-01

    Although the averageness hypothesis of facial attractiveness proposes that the attractiveness of faces is mostly a consequence of their averageness, 1 study has shown that caricaturing highly attractive faces makes them mathematically less average but more attractive. Here the authors systematically test the averageness hypothesis in 5 experiments…

  12. 18 CFR 301.7 - Average System Cost methodology functionalization.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Average System Cost... REGULATORY COMMISSION, DEPARTMENT OF ENERGY REGULATIONS FOR FEDERAL POWER MARKETING ADMINISTRATIONS AVERAGE... ACT § 301.7 Average System Cost methodology functionalization. (a) Functionalization of each...

  13. Where the chips fall: environmental health in the semiconductor industry.

    PubMed Central

    Chepesiuk, R

    1999-01-01

    Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment. PMID:10464084

  14. Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology.

    PubMed

    Sun, Min-Chul; Kim, Garam; Kim, Sang Wan; Kim, Hyun Woo; Kim, Hyungjin; Lee, Jong-Ho; Shin, Hyungcheol; Park, Byung-Gook

    2012-07-01

    In order to extend the conventional low power Si CMOS technology beyond the 20-nm node without SOI substrates, we propose a novel co-integration scheme to build horizontal- and vertical-channel MOSFETs together and verify the idea using TCAD simulations. From the fabrication viewpoint, it is highlighted that this scheme provides additional vertical devices with good scalability by adding a few steps to the conventional CMOS process flow for fin formation. In addition, the benefits of the co-integrated vertical devices are investigated using a TCAD device simulation. From this study, it is confirmed that the vertical device shows improved off-current control and a larger drive current when the body dimension is less than 20 nm, due to the electric field coupling effect at the double-gated channel. Finally, the benefits from the circuit design viewpoint, such as the larger midpoint gain and beta and lower power consumption, are confirmed by the mixed-mode circuit simulation study.

  15. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  16. Will Future Measurement Needs of the Semiconductor Industry Be Met?

    PubMed Central

    Bennett, Herbert S.

    2007-01-01

    We discuss the ability of the nation’s measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the perspective of what will be required to continue the semiconductor industry’s powerful impact in the world’s macro-economy and maintain its exceptional record of numerous technological innovations. This paper concludes with suggestions about ways to strengthen the measurement system for the semiconductor industry. PMID:27110452

  17. Novel High-Performance Analog Devices for Advanced Low-Power High-k Metal Gate Complementary Metal-Oxide-Semiconductor Technology

    NASA Astrophysics Data System (ADS)

    Han, Jin-Ping; Shimizu, Takashi; Pan, Li-Hong; Voelker, Moritz; Bernicot, Christophe; Arnaud, Franck; Mocuta, Anda; Stahrenberg, Knut; Azuma, Atsushi; Eller, Manfred; Yang, Guoyong; Jaeger, Daniel; Zhuang, Haoren; Miyashita, Katsura; Stein, Kenneth; Nair, Deleep; Hoo Park, Jae; Kohler, Sabrina; Hamaguchi, Masafumi; Li, Weipeng; Kim, Kisang; Chanemougame, Daniel; Kim, Nam Sung; Uchimura, Sadaharu; Tsutsui, Gen; Wiedholz, Christian; Miyake, Shinich; van Meer, Hans; Liang, Jewel; Ostermayr, Martin; Lian, Jenny; Celik, Muhsin; Donaton, Ricardo; Barla, Kathy; Na, MyungHee; Goto, Yoshiro; Sherony, Melanie; Johnson, Frank S.; Wachnik, Richard; Sudijono, John; Kaste, Ed; Sampson, Ron; Ku, Ja-Hum; Steegen, An; Neumueller, Walter

    2011-04-01

    High performance analog (HPA) devices in high-k metal gate (HKMG) scheme with innovative halo engineering have been successfully demonstrated to produce superior analog and digital performance for low power applications. HPA device was processed “freely” with no extra mask, no extra litho, and no extra process step. This paper details a comprehensive study of the analog and digital characteristics of these HPA devices in comparison with analog control (conventional digital devices with matched geometry). Analog properties such as output voltage gain (also called self-gain), trans-conductance Gm, conductance Gds, Gm/Id, mismatching (MM) behavior, flicker noise (1/f noise) and current linearity have clearly reflected the advantage of HPA devices over analog control, while DC performance (e.g., Ion-Ioff, Ioff-Vtsat, DIBL, Cjswg) and reliability (HCI) have also shown the comparability of HPA devices over control.

  18. Graphene/semiconductor silicon modified BiFeO3/indium tin oxide ferroelectric photovoltaic device for transparent self-powered windows

    NASA Astrophysics Data System (ADS)

    Gupta, Surbhi; Medwal, Rohit; Limbu, Tej B.; Katiyar, Rajesh K.; Pavunny, Shojan P.; Tomar, Monika; Morell, G.; Gupta, Vinay; Katiyar, R. S.

    2015-08-01

    We report photovoltaic response of highly transparent graphene/BiFe0.95Si0.05O3 (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (ISC 0.75 mA) with 1000 fold upsurge and open-circuit-voltage (VOC ˜ 0.45 V) under standard AM 1.5 illumination through graphene. In combination, ISC of 0.63 mA and VOC of 0.35 V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of ISC and VOC with quick switching (<100 ms) for 20 consecutive cycles and stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows.

  19. High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems

    NASA Astrophysics Data System (ADS)

    Slipchenko, Sergey; Podoskin, Aleksandr; Soboleva, Olga; Zakharov, Maxim S.; Bakhvalov, Kirill; Romanovich, Dmitrii; Pikhtin, Nikita; Tarasov, Il`ya; Bagaev, Timur; Ladugin, Maxim; Marmalyuk, Aleksandr; Simakov, Vladimir

    2016-03-01

    We present a new approach based on the integration of the functions of a high-efficiency current switch and a laser emitter into a single heterostructure as elements of time-of-flight (TOF) systems. The approach being developed employs the effect of an electrical bistability, which occurs in the general case in thyristor structures. We report recent results obtained in a study of the dynamic electrical and optical characteristics of the pulsed sources we developed. An effective generation of 2- to 100-ns laser pulses at a wavelength of 905 nm is demonstrated. The possibility of generating laser pulses shorter than 1 ns is considered. The maximum peak power reached values of 7 and 50 W for 10- and 100-ns pulses, respectively.

  20. Power electronics cooling apparatus

    SciTech Connect

    Sanger, Philip Albert; Lindberg, Frank A.; Garcen, Walter

    2000-01-01

    A semiconductor cooling arrangement wherein a semiconductor is affixed to a thermally and electrically conducting carrier such as by brazing. The coefficient of thermal expansion of the semiconductor and carrier are closely matched to one another so that during operation they will not be overstressed mechanically due to thermal cycling. Electrical connection is made to the semiconductor and carrier, and a porous metal heat exchanger is thermally connected to the carrier. The heat exchanger is positioned within an electrically insulating cooling assembly having cooling oil flowing therethrough. The arrangement is particularly well adapted for the cooling of high power switching elements in a power bridge.

  1. Photoinduced superconductivity in semiconductors

    NASA Astrophysics Data System (ADS)

    Goldstein, Garry; Aron, Camille; Chamon, Claudio

    2015-02-01

    We show that optically pumped semiconductors can exhibit superconductivity. We illustrate this phenomenon in the case of a two-band semiconductor tunnel-coupled to broad-band reservoirs and driven by a continuous wave laser. More realistically, we also show that superconductivity can be induced in a two-band semiconductor interacting with a broad-spectrum light source. We furthermore discuss the case of a three-band model in which the middle band replaces the broad-band reservoirs as the source of dissipation. In all three cases, we derive the simple conditions on the band structure, electron-electron interaction, and hybridization to the reservoirs that enable superconductivity. We compute the finite superconducting pairing and argue that the mechanism can be induced through both attractive and repulsive interactions and is robust to high temperatures.

  2. Special Issue featuring invited articles arising from UK Semiconductors 2012

    NASA Astrophysics Data System (ADS)

    Clarke, Edmund; Wada, Osamu

    2013-07-01

    Semiconductor research has formed the basis of many technological advances over the past 50 years, and the field is still highly active, as new material systems and device concepts are developed to address new applications or operating conditions. In addition to the development of traditional semiconductor devices, the wealth of experience with these materials also allows their use as an ideal environment for testing new physics, leading to new classes of devices exploiting quantum mechanical effects that can also benefit from the advantages of existing semiconductor technology in scalability, compactness and ease of mass production. This special issue features papers arising from the UK Semiconductors 2012 Conference, held at the University of Sheffield. The annual conference covers all aspects of semiconductor research, from crystal growth, through investigations of the physics of semiconductor structures to realization of semiconductor devices and their application in emerging technologies. The 2012 conference featured over 150 presentations, including plenary sessions on interband cascade lasers for the 3-6 µm spectral band, efficient single photon sources based on InAs quantum dots embedded in GaAs photonic nanowires, nitride-based quantum dot visible lasers and single photon sources, and engineering of organic light-emitting diodes. The seven papers collected here highlight current research advances, taken from across the scope of the conference. The papers feature growth of novel nitride-antimonide material systems for mid-infrared sources and detectors, use of semiconductor nanostructures for charge-based memory and visible lasers, optimization of device structures either to reduce losses in solar cells or achieve low noise amplification in transistors, design considerations for surface-emitting lasers incorporating photonic crystals and an assessment of laser power convertors for power transfer. The editors of this special issue and the conference

  3. Superconductivity in doped semiconductors

    NASA Astrophysics Data System (ADS)

    Bustarret, E.

    2015-07-01

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  4. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  5. Semiconductor laser diode

    SciTech Connect

    Amann, M.C.

    1982-09-28

    A semiconductor laser diode is disclosed with a connection electrode consisting of a chromium/gold alloy on a highly-doped gallium arsenide layer. The gallium arsenide layer is strip shaped and overlies a further lesser doped layer of gallium aluminum arsenide. The chromium/gold contact has a low-resistance junction only in the region of the more highly doped layer so that a strip shaped restriction of the current path occurs in the semiconductor body. Accordingly, a laser-active zone which is only strip-shaped is achieved.

  6. Semiconductor surface protection material

    NASA Technical Reports Server (NTRS)

    Packard, R. D. (Inventor)

    1973-01-01

    A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

  7. Graphene/semiconductor silicon modified BiFeO{sub 3}/indium tin oxide ferroelectric photovoltaic device for transparent self-powered windows

    SciTech Connect

    Gupta, Surbhi; Medwal, Rohit Limbu, Tej B.; Katiyar, Rajesh K.; Pavunny, Shojan P.; Morell, G.; Katiyar, R. S.; Tomar, Monika; Gupta, Vinay

    2015-08-10

    We report photovoltaic response of highly transparent graphene/BiFe{sub 0.95}Si{sub 0.05}O{sub 3} (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (I{sub SC} 0.75 mA) with 1000 fold upsurge and open-circuit-voltage (V{sub OC} ∼ 0.45 V) under standard AM 1.5 illumination through graphene. In combination, I{sub SC} of 0.63 mA and V{sub OC} of 0.35 V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of I{sub SC} and V{sub OC} with quick switching (<100 ms) for 20 consecutive cycles and stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows.

  8. Kansas Advanced Semiconductor Project

    SciTech Connect

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  9. Chemically Derivatized Semiconductor Photoelectrodes.

    ERIC Educational Resources Information Center

    Wrighton, Mark S.

    1983-01-01

    Deliberate modification of semiconductor photoelectrodes to improve durability and enhance rate of desirable interfacial redox processes is discussed for a variety of systems. Modification with molecular-based systems or with metals/metal oxides yields results indicating an important role for surface modification in devices for fundamental study…

  10. Amorphous semiconductor solar cell

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  11. Physics of Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Brütting, Wolfgang

    2004-05-01

    Organic semiconductors are of steadily growing interest as active components in electronics and optoelectronics. Due to their flexibility, low cost and ease-of-production they represent a valid alternative to conventional inorganic semiconductor technology in a number of applications, such as flat panel displays and illumination, plastic integrated circuits or solar energy conversion. Although first commercial applications of this technology are being realized nowadays, there is still the need for a deeper scientific understanding in order to achieve optimum device performance.This special issue of physica status solidi (a) tries to give an overview of our present-day knowledge of the physics behind organic semiconductor devices. Contributions from 17 international research groups cover various aspects of this field ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in different devices like organic field-effect transistors, photovoltaic cells and organic light-emitting diodes.Putting together such a special issue one soon realizes that it is simply impossible to fully cover the whole area of organic semiconductors. Nevertheless, we hope that the reader will find the collection of topics in this issue useful for getting an up-to-date review of a field which is still developing very dynamically.

  12. Method of plasma etching GA-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  13. Architectures for Improved Organic Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Beck, Jonathan H.

    Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

  14. Epitaxy of semiconductor-superconductor nanowires.

    PubMed

    Krogstrup, P; Ziino, N L B; Chang, W; Albrecht, S M; Madsen, M H; Johnson, E; Nygård, J; Marcus, C M; Jespersen, T S

    2015-04-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures. PMID:25581626

  15. Epitaxy of semiconductor-superconductor nanowires

    NASA Astrophysics Data System (ADS)

    Krogstrup, P.; Ziino, N. L. B.; Chang, W.; Albrecht, S. M.; Madsen, M. H.; Johnson, E.; Nygård, J.; Marcus, C. M.; Jespersen, T. S.

    2015-04-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures.

  16. Novel room temperature ferromagnetic semiconductors

    SciTech Connect

    Gupta, Amita

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting

  17. Averaging Models: Parameters Estimation with the R-Average Procedure

    ERIC Educational Resources Information Center

    Vidotto, G.; Massidda, D.; Noventa, S.

    2010-01-01

    The Functional Measurement approach, proposed within the theoretical framework of Information Integration Theory (Anderson, 1981, 1982), can be a useful multi-attribute analysis tool. Compared to the majority of statistical models, the averaging model can account for interaction effects without adding complexity. The R-Average method (Vidotto &…

  18. Low-timing-jitter high-power mode-locked 1063 nm Nd:GdVO₄ master oscillator power amplifier.

    PubMed

    Wang, Zhi-min; Zhang, Feng-feng; Zuo, Jun-wei; Yang, Jing; Yuan, Lei; Peng, Qin-jun; Cui, Da-fu; Xu, Zu-yan

    2015-10-01

    A low-timing-jitter high-power semiconductor saturable absorber mirror mode-locked picosecond (ps) 1063 nm Nd:GdVO4 master oscillator power amplifier is presented. Using a single-pass Nd:GdVO4 amplifier, an amplified laser with 21.5 W output power and 8.3 ps pulsewidth was achieved at 250 MHz repetition rate. Employing a servo control, an average RMS timing jitter of ∼222  fs was realized. This laser can be used as a drive laser for photocathode injectors in free-electron lasers. PMID:26479619

  19. Semiconductor radiation detector

    DOEpatents

    Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.; Vilkelis, Gintas

    2002-01-01

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  20. Semiconductor eutectic solar cell

    NASA Astrophysics Data System (ADS)

    Yue, A. S.; Yu, J. G.

    1986-12-01

    Two-phase semiconducting eutectics are potential device-materials. Of these, the SnSe-SnSe2 eutectic was chosen for studies in detail because it consists of multi-p/n-layers of SnSe and SnSe2 semiconductors. Since plasma frequency has not been detected in its infrared reflectance spectrum up to 40 micrometers of wavelength, it suggests that the SnSe-SnSe2 eutectic is a nondegenerate semiconductor. As-grown SnSe2 single crystals have hexagonal crystallographic structure and show n-type conductivity. Polycrystalline SnSe and SnSe2 films have been successfully prepared in vacuum using a close-space-vapor transport technique.

  1. Light amplification using semiconductors

    SciTech Connect

    Dupuis, R.D.

    1987-06-01

    During the summer of 1953, John von Neumann discussed his ideas concerning light amplification using semiconductors with Edward Teller. In September of that year, von Neumann sent a manuscript containing his ideas and calculations on this subject to Teller for his comments. To the best of our knowledge, von Neumann did not take time to work further on these ideas, and the manuscript remained unpublished. These previously unpublished writings of John von Neumann on the subject of light amplification in semiconductors are printed as a service to the laser community. While von Neumann's original manuscript and his letter to Teller are available to anyone who visits the Library of Congress, it is much more convenient to have this paper appear in an archival journal.

  2. Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  3. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  4. Tunable semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

    2006-01-01

    Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

  5. Design and optimization of micro-semiconductor bridge used for solid propellant microthrusters array

    NASA Astrophysics Data System (ADS)

    Ru, Chengbo; Dai, Ji; Xu, Jianbing; Ye, Yinghua; Zhu, Peng; Shen, Ruiqi

    2016-06-01

    Igniter is the basic component of MEMS-based solid propellant microthrusters (SPM) array, which should response fast with low dissipated energy. To satisfy the requirements, micro-semiconductor bridge (MSCB) with dual V-angles contributing to the reduction of dissipated energy is introduced into the array. The electrical explosion characteristics of MSCB investigated under constant voltage, in the considerations of the limit of power supply in the micro/nanosatellite, are similar to those under capacitive discharge. The bridge was completely vaporized and burst into the hot plasma under high-level voltage. While under low-level voltage, the bridge was partly vaporized without detected plasma. The 3#SCB (90° V-angle) with the smallest power density resulting in the lowest applied voltage (12.0 V) and the 2#SCB with the smallest narrow width (Wmin) leading to the lowest average power (11.3 W) were chosen to the further optimization. The ignition tests were implemented to examine the ignition reliability of the contractible igniters, which were optimized to satisfy the voltage limitation with sufficient ignition capacity. The results show that the effective SCB with lowest dissipated power is the 3#-3SCB, which function within 100 μ under 7.0 V, and the average power below 5.0 W.

  6. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  7. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  8. Synchronous semiconductor memory device

    SciTech Connect

    Onno, C.; Hirata, M.

    1989-11-21

    This patent describes a synchronous semiconductor memory device. It comprises: first latch means for latching a write command in synchronism with clock signal; second latch means for latching a write data in synchronism with the clock signal and for outputting two write process signals based on the write data latched thereby; pulse generating means for generating an internal write pulse signal based on the write command latched by the first latch means. The internal write pulse signal having a semiconductor memory device; write control means supplied with the internal write pulse signal and the write process signals for controlling write and read operations of the synchronous semiconductor memory device; memory means for storing the write data latched by the second latch means; and noise preventing means coupled to the second latch means and the write control means for supplying the write process signals to the write control means only in the write mode responsive to the internal write pulse signal and for setting the write process signals to fixed potentials during a time other than the write mode.

  9. Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

    NASA Astrophysics Data System (ADS)

    Song, Yan-Rong; Guoyu, He-Yang; Zhang, Peng; Tian, Jin-Rong

    2015-08-01

    We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained InGaAs symmetrical step quantum wells in the active region. 3-GHz repetition rate, 4.9-ps pulse duration, and 30-mW average output power are obtained with 1.4 W of 808-nm incident pump power. The temperature stability of the laser is demonstrated to have an ideal shift rate of 0.035 nm/K of the lasing wavelength. Project supported by the National Natural Science Foundation of China (Grant No. 61177047) and the Key Project of the National Natural Science Foundation of China (Grant No. 61235010).

  10. Tapered semiconductor amplifiers for optical frequency combs in the near infrared.

    PubMed

    Cruz, Flavio C; Stowe, Matthew C; Ye, Jun

    2006-05-01

    A tapered semiconductor amplifier is injection seeded by a femtosecond optical frequency comb at 780 nm from a mode-locked Ti:sapphire laser. Energy gains of more than 17 dB(12 dB) are obtained for 1 mW(20 mW) of average input power when the input pulses are stretched into the picosecond range. A spectral window of supercontinuum light generated in a photonic fiber has also been amplified. Interferometric measurements show sub-Hertz linewidths for a heterodyne beat between the input and amplified comb components, yielding no detectable phase-noise degradation under amplification. These amplifiers can be used to boost the infrared power in f-to-2f interferometers used to determine the carrier-to-envelope offset frequency, with clear advantages for stabilization of octave-spanning femtosecond lasers and other supercontinuum light sources. PMID:16642104

  11. Recent advances in optically pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Chilla, Juan; Shu, Qi-Ze; Zhou, Hailong; Weiss, Eli; Reed, Murray; Spinelli, Luis

    2007-02-01

    Optically pumped semiconductor lasers offer significant advantages with respect to all traditional diode-pumped solid state lasers (including fiber lasers) in regards to wavelength flexibility, broad pump tolerance, efficient spectral and spatial brightness conversion and high power scaling. In this talk we will describe our recent progress in the lab and applying this technology to commercial systems. Results include diversified wavelengths from 460 to 570nm, power scaling to >60W of CW 532nm, and the launch of a low cost 5W CW visible source for forensic applications.

  12. Magneto-Optical Characterization of Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Agool, Ibrahim R.

    Available from UMI in association with The British Library. The subject matter of this thesis lies within the area of the physics of semiconductor crystals and more particularly is concerned with the characterization of compound semiconductors using the magneto-optical excitation studies for their importance in the field of device technology. In the first part of this thesis a full study is reported for bulk indium phosphide which is important as substrate material for device fabrication. Measurements have shown that the MCD-ODMR technique is a powerful tool in the investigation of ground state transitions of bulk substrate semiconductors. It has also been shown that the optical technique can be used to explore native defects and transition metal ions in semiconductors. It is also shown in the thesis that an important method used in the characterization of semiconductor superlattices is the use of CO_2 optically pumped far-infrared lasers for studies in quantum wells. This method described as optically detected cyclotron resonance (ODCR), where FIR induced changes in luminescence intensity at resonance has allowed the investigation of non-parabolicity and subband structure for both conduction and valence bands in GaAs. ODCR results at FIR frequencies are compared with measurements performed at microwave frequencies. We have demonstrated that the sensitivity and resolution of FIR-ODCR allows the investigation of multilayer (low dimensional) GaAs/GaAlAs systems with different well widths, where one can monitor the emission from each well independently and examine the effective mass versus well thickness. For the first time we have observed the exchange interaction between donor and acceptor pairs. A Hall Effect system is described for the electrical characterization of doped ZnSe grown at Heriot-Watt University using molecular beam epitaxy (MBE) for new optoelectronic devices such as blue light emitting diodes and blue lasers.

  13. MACHINE PROTECTION FOR HIGH AVERAGE CURRENT LINACS

    SciTech Connect

    Jordan, Kevin; Allison, Trent; Evans, Richard; Coleman, James; Grippo, Albert

    2003-05-01

    A fully integrated Machine Protection System (MPS) is critical to efficient commissioning and safe operation of all high current accelerators. The Jefferson Lab FEL [1,2] has multiple electron beam paths and many different types of diagnostic insertion devices. The MPS [3] needs to monitor both the status of these devices and the magnet settings which define the beam path. The matrix of these devices and beam paths are programmed into gate arrays, the output of the matrix is an allowable maximum average power limit. This power limit is enforced by the drive laser for the photocathode gun. The Beam Loss Monitors (BLMs), RF status, and laser safety system status are also inputs to the control matrix. There are 8 Machine Modes (electron path) and 8 Beam Modes (average power limits) that define the safe operating limits for the FEL. Combinations outside of this matrix are unsafe and the beam is inhibited. The power limits range from no beam to 2 megawatts of electron beam power.

  14. Averaging Internal Consistency Reliability Coefficients

    ERIC Educational Resources Information Center

    Feldt, Leonard S.; Charter, Richard A.

    2006-01-01

    Seven approaches to averaging reliability coefficients are presented. Each approach starts with a unique definition of the concept of "average," and no approach is more correct than the others. Six of the approaches are applicable to internal consistency coefficients. The seventh approach is specific to alternate-forms coefficients. Although the…

  15. Visible-wavelength semiconductor lasers and arrays

    DOEpatents

    Schneider, Jr., Richard P.; Crawford, Mary H.

    1996-01-01

    A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

  16. Integrated three-dimensional module heat exchanger for power electronics cooling

    DOEpatents

    Bennion, Kevin; Lustbader, Jason

    2013-09-24

    Embodiments discussed herein are directed to a power semiconductor packaging that removes heat from a semiconductor package through one or more cooling zones that are located in a laterally oriented position with respect to the semiconductor package. Additional embodiments are directed to circuit elements that are constructed from one or more modular power semiconductor packages.

  17. The Average of Rates and the Average Rate.

    ERIC Educational Resources Information Center

    Lindstrom, Peter

    1988-01-01

    Defines arithmetic, harmonic, and weighted harmonic means, and discusses their properties. Describes the application of these properties in problems involving fuel economy estimates and average rates of motion. Gives example problems and solutions. (CW)

  18. Semiconductor optoelectronic devices for free-space optical communications

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1983-01-01

    The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

  19. Output-Level Control of Semiconductor Optical Amplifier by External Light Injection

    NASA Astrophysics Data System (ADS)

    Morito, Ken

    2005-12-01

    A method of controlling the output level of semiconductor optical amplifiers (SOAs) that accepts a wide range of input power and delivers constant output power was experimentally studied. It is demonstrated that external light injection into SOAs could change the signal gain by varying the depth of gain saturation while retaining their saturation output power. This feature is very important in SOAs when amplifying signals modulated in the gigabit-per-second (Gb/s) range because the average output level of SOAs must be limited to a value several decibels lower than the saturation output power to prevent signal distortions due to the pattern effect. For signals modulated at 10 Gb/s in the nonreturn-to-zero (NRZ) format, the upper limit for allowable signal input power increased by > 13.5 dB, while retaining good eye patterns in a signal-wavelength range between 1530 and 1560 nm. Consequently, output-level control with a constant output power of +10 dBm was demonstrated for a wide input dynamic range of 13.5 dB in the signal-wavelength range. This method of controlling the output level of SOAs is promising for equalizing the signal power in future photonic network systems because the short carrier lifetime of SOAs can provide extremely fast gain control.

  20. Multidimensional coherent optical spectroscopy of semiconductor nanostructures: a review

    NASA Astrophysics Data System (ADS)

    Nardin, Gaël

    2016-02-01

    Multidimensional coherent optical spectroscopy (MDCS) is an elegant and versatile tool to measure the ultrafast nonlinear optical response of materials. Of particular interest for semiconductor nanostructures, MDCS enables the separation of homogeneous and inhomogeneous linewidths, reveals the nature of coupling between resonances, and is able to identify the signatures of many-body interactions. As an extension of transient four-wave mixing (FWM) experiments, MDCS can be implemented in various geometries, in which different strategies can be used to isolate the FWM signal and measure its phase. I review and compare different practical implementations of MDCS experiments adapted to the study of semiconductor materials. The power of MDCS is illustrated by discussing experimental results obtained on semiconductor nanostructures such as quantum dots, quantum wells, microcavities, and layered semiconductors.

  1. Evaluation and testing of semiconductor laser reliability in optic system

    NASA Astrophysics Data System (ADS)

    Tang, Wenyan; Fan, Xianguang; Sun, Heyi

    2007-01-01

    In order to improve the performance of an optic system, a new evaluation and testing methodology for the light source which uses semiconductor laser is presented. A new system, combining high accuracy source and measure capabilities for pulsed testing, is developed to achieve the aim of automatic measurement of Light-Current-Power (LIV) for semiconductor laser. The test can provide customer with L-I, V-I curves and other correlative parameters, such as the threshold current and slope efficiency, and so on. Meanwhile, the change of environment temperature versus lasing wavelength under pulse injection is discussed, and the relationship between the lasing wavelength and the width and cycle of injection pulse is obtained. The temperature character of packaged laser unit is measured conveniently. Making use of the above examined curves and parameters, the reliability of semiconductor laser and quality of device can be compared directly and evaluated accurately. The technique is successfully applied for the evaluation of semiconductor laser reliability.

  2. Integrated devices including cleaved semiconductor lasers

    SciTech Connect

    Chen, C.Y.

    1987-11-17

    A process for fabricating a semiconductor device is described comprising semiconductor laser on a semiconductor substrate in which prior to cleaving the semiconductor substrate to form a facet of the semiconductor laser a hole is made in the substrate along the cleave plane so as to produce a stop cleave facet.

  3. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  4. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  5. Developments in space power components for power management and distribution

    NASA Technical Reports Server (NTRS)

    Renz, D. D.

    1984-01-01

    Advanced power electronic components development for space applications is discussed. The components described include transformers, inductors, semiconductor devices such as transistors and diodes, remote power controllers, and transmission lines.

  6. Broadly tunable DBR-free semiconductor disk laser

    NASA Astrophysics Data System (ADS)

    Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Hackett, Shawn; Sheik-Bahae, Mansoor

    2016-03-01

    We report a DBR-free semiconductor disk lasers centered at 1160 nm with a tuning range of 78 nm, and ongoing effort on our DBR-free SDL centered at 1040 nm. Compared with conventional semiconductor disk lasers, DBR-free SDLs have a broader effective gain bandwidth. In CW operation, 2.5 W output power at 1160 nm and 6 W at 1055 nm were collected from the two lasers without thermal-rollover. Intracavity loss mitigation, currently underway, should improve power scaling and efficiency in these systems.

  7. Semiconductor ring lasers with delayed optical feedback: low-frequency fluctuations

    NASA Astrophysics Data System (ADS)

    Van der Sande, Guy; Mashal, Lilia; Nguimdo, Romain Modeste; Cornelles-Soriano, Miguel C.; Danckaert, Jan; Verschaffelt, Guy

    2014-05-01

    Semiconductor lasers subject to external feedback are known to exhibit a wide variety of dynamical regimes desired for some applications such as chaos cryptography, random bit generation, and reservoir computing. Low-frequency fluctuations is one of the most frequently encountered regimes. It is characterized by a fast drop in laser intensity followed by a gradual recovery. The duration of this recovery process is irregular and of the order of hundred nanoseconds. The average time between dropouts is much larger than the laser system characteristic time-scales. Semiconductor ring lasers are currently the focus of a rapidly thriving research activity due to their unique feature of directional bistability. They can be employed in systems for all-optical switching, gating, wavelength-conversion functions, and all-optical memories. Semiconductor ring lasers do not require cleaved facets or gratings for optical feedback and are thus particularly suited for monolithic integration. We experimentally and numerically address the issue of low-frequency fluctuations considering a semiconductor ring laser in a feedback configuration where only one directional mode is re-injected into the same directional mode, a so-called single self-feedback. We have observed that the system is very sensitive to the feedback strength and the injection current. In particular, the power dropouts are more regular when the pump current is increased and become less frequent when the feedback strength is increased. In addition, we find two different recovery processes after the power dropouts of the low-frequency fluctuations. The recovery can either occur via pulses or in a stepwise manner. Since low-frequency fluctuations are not specific to semiconductor ring lasers, we expect these recovery processes to appear also in VCSELs and edge-emitting lasers under similar feedback conditions. The numerical simulations also capture these different behaviors, where the representation in the phase space of

  8. Layered semiconductor neutron detectors

    DOEpatents

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  9. Semiconductor superlattice photodetectors

    NASA Technical Reports Server (NTRS)

    Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

    1984-01-01

    A superlattice photomultiplier and a photodetector based on the real space transfer mechanism were studied. The wavelength for the first device is of the order of a micron or flexible corresponding to the bandgap absorption in a semiconductor. The wavelength for the second device is in the micron range (about 2 to 12 microns) corresponding to the energy of the conduction band edge discontinuity between an Al/(sub x)Ga(sub 1-x)As and GaAs interface. Both devices are described.

  10. Deep levels in semiconductors

    NASA Astrophysics Data System (ADS)

    Watkins, George D.

    1983-03-01

    The 3d transition element ion impurities in silicon are reviewed for the broad insight they provide in understanding deep levels in semiconductors. As interstitials, their interaction with the host tends to confine the d-levels to the forbidden gap, providing many deep states. The interaction at the substitutional site is best considered as an interaction with the lattice vacancy, into which the impurity is placed. This interaction tends to repel deep a1 and t2 levels from the gap. When the levels are present, they are mostly vacancy-like and the defect is likely to display the large lattice relaxations characteristic of the vacancy.

  11. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2001-12-21

    Semiconductor bulk crystals and multilayer structures with controlled isotopic composition have attracted much scientific and technical interest in the past few years. Isotopic composition affects a large number of physical properties, including phonon energies and lifetimes, bandgaps, the thermal conductivity and expansion coefficient and spin-related effects. Isotope superlattices are ideal media for self-diffusion studies. In combination with neutron transmutation doping, isotope control offers a novel approach to metal-insulator transition studies. Spintronics, quantum computing and nanoparticle science are emerging fields using isotope control.

  12. Semiconductor nanorod liquid crystals

    SciTech Connect

    Li, Liang-shi; Walda, Joost; Manna, Liberato; Alivisatos, A. Paul

    2002-01-28

    Rodlike molecules form liquid crystalline phases with orientational order and positional disorder. The great majority of materials in which liquid crystalline phases have been observed are comprised of organic molecules or polymers, even though there has been continuing and growing interest in inorganic liquid crystals. Recent advances in the control of the sizes and shapes of inorganic nanocrystals allow for the formation of a broad class of new inorganic liquid crystals. Here we show the formation of liquid crystalline phases of CdSe semiconductor nanorods. These new liquid crystalline phases may have great importance for both application and fundamental study.

  13. Development of on-line laser power monitoring system

    NASA Astrophysics Data System (ADS)

    Ding, Chien-Fang; Lee, Meng-Shiou; Li, Kuan-Ming

    2016-03-01

    Since the laser was invented, laser has been applied in many fields such as material processing, communication, measurement, biomedical engineering, defense industries and etc. Laser power is an important parameter in laser material processing, i.e. laser cutting, and laser drilling. However, the laser power is easily affected by the environment temperature, we tend to monitor the laser power status, ensuring there is an effective material processing. Besides, the response time of current laser power meters is too long, they cannot measure laser power accurately in a short time. To be more precisely, we can know the status of laser power and help us to achieve an effective material processing at the same time. To monitor the laser power, this study utilize a CMOS (Complementary metal-oxide-semiconductor) camera to develop an on-line laser power monitoring system. The CMOS camera captures images of incident laser beam after it is split and attenuated by beam splitter and neutral density filter. By comparing the average brightness of the beam spots and measurement results from laser power meter, laser power can be estimated. Under continuous measuring mode, the average measuring error is about 3%, and the response time is at least 3.6 second shorter than thermopile power meters; under trigger measuring mode which enables the CMOS camera to synchronize with intermittent laser output, the average measuring error is less than 3%, and the shortest response time is 20 millisecond.

  14. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

    1987-08-31

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

  15. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  16. Aqueous Based Semiconductor Nanocrystals.

    PubMed

    Jing, Lihong; Kershaw, Stephen V; Li, Yilin; Huang, Xiaodan; Li, Yingying; Rogach, Andrey L; Gao, Mingyuan

    2016-09-28

    This review summarizes traditional and recent nonconventional, bioinspired, methods for the aqueous synthesis of colloidal semiconductor quantum dots (QDs). The basic chemistry concepts are critically emphasized at the very beginning as these are strongly correlated with the selection of ligands and the optimal formation of aqueous QDs and their more sophisticated structures. The synergies of biomimetic and biosynthetic methods that can combine biospecific reactivity with the robust and strong optical responses of QDs have also resulted in new approaches to the synthesis of the nanoparticles themselves. A related new avenue is the recent extension of QD synthesis to form nanoparticles endowed with chiral optical properties. The optical characteristics of QD materials and their advanced forms such as core/shell heterostructures, alloys, and doped QDs are discussed: from the design considerations of optical band gap tuning, the control and reduction of the impact of surface traps, the consideration of charge carrier processes that affect emission and energy and charge transfer, to the impact and influence of lattice strain. We also describe the considerable progress in some selected QD applications such as in bioimaging and theranostics. The review concludes with future strategies and identification of key challenges that still need to be resolved in reaching very attractive, scalable, yet versatile aqueous syntheses that may widen the scope of commercial applications for semiconductor nanocrystals. PMID:27586892

  17. Determining GPS average performance metrics

    NASA Technical Reports Server (NTRS)

    Moore, G. V.

    1995-01-01

    Analytic and semi-analytic methods are used to show that users of the GPS constellation can expect performance variations based on their location. Specifically, performance is shown to be a function of both altitude and latitude. These results stem from the fact that the GPS constellation is itself non-uniform. For example, GPS satellites are over four times as likely to be directly over Tierra del Fuego than over Hawaii or Singapore. Inevitable performance variations due to user location occur for ground, sea, air and space GPS users. These performance variations can be studied in an average relative sense. A semi-analytic tool which symmetrically allocates GPS satellite latitude belt dwell times among longitude points is used to compute average performance metrics. These metrics include average number of GPS vehicles visible, relative average accuracies in the radial, intrack and crosstrack (or radial, north/south, east/west) directions, and relative average PDOP or GDOP. The tool can be quickly changed to incorporate various user antenna obscuration models and various GPS constellation designs. Among other applications, tool results can be used in studies to: predict locations and geometries of best/worst case performance, design GPS constellations, determine optimal user antenna location and understand performance trends among various users.

  18. Vocal attractiveness increases by averaging.

    PubMed

    Bruckert, Laetitia; Bestelmeyer, Patricia; Latinus, Marianne; Rouger, Julien; Charest, Ian; Rousselet, Guillaume A; Kawahara, Hideki; Belin, Pascal

    2010-01-26

    Vocal attractiveness has a profound influence on listeners-a bias known as the "what sounds beautiful is good" vocal attractiveness stereotype [1]-with tangible impact on a voice owner's success at mating, job applications, and/or elections. The prevailing view holds that attractive voices are those that signal desirable attributes in a potential mate [2-4]-e.g., lower pitch in male voices. However, this account does not explain our preferences in more general social contexts in which voices of both genders are evaluated. Here we show that averaging voices via auditory morphing [5] results in more attractive voices, irrespective of the speaker's or listener's gender. Moreover, we show that this phenomenon is largely explained by two independent by-products of averaging: a smoother voice texture (reduced aperiodicities) and a greater similarity in pitch and timbre with the average of all voices (reduced "distance to mean"). These results provide the first evidence for a phenomenon of vocal attractiveness increases by averaging, analogous to a well-established effect of facial averaging [6, 7]. They highlight prototype-based coding [8] as a central feature of voice perception, emphasizing the similarity in the mechanisms of face and voice perception.

  19. Vocal attractiveness increases by averaging.

    PubMed

    Bruckert, Laetitia; Bestelmeyer, Patricia; Latinus, Marianne; Rouger, Julien; Charest, Ian; Rousselet, Guillaume A; Kawahara, Hideki; Belin, Pascal

    2010-01-26

    Vocal attractiveness has a profound influence on listeners-a bias known as the "what sounds beautiful is good" vocal attractiveness stereotype [1]-with tangible impact on a voice owner's success at mating, job applications, and/or elections. The prevailing view holds that attractive voices are those that signal desirable attributes in a potential mate [2-4]-e.g., lower pitch in male voices. However, this account does not explain our preferences in more general social contexts in which voices of both genders are evaluated. Here we show that averaging voices via auditory morphing [5] results in more attractive voices, irrespective of the speaker's or listener's gender. Moreover, we show that this phenomenon is largely explained by two independent by-products of averaging: a smoother voice texture (reduced aperiodicities) and a greater similarity in pitch and timbre with the average of all voices (reduced "distance to mean"). These results provide the first evidence for a phenomenon of vocal attractiveness increases by averaging, analogous to a well-established effect of facial averaging [6, 7]. They highlight prototype-based coding [8] as a central feature of voice perception, emphasizing the similarity in the mechanisms of face and voice perception. PMID:20129047

  20. Isotopically engineered semiconductors

    NASA Astrophysics Data System (ADS)

    Haller, E. E.

    1995-04-01

    Scientific interest, technological promise, and increased availability of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This review of mostly recent activities begins with an introduction to some past classical experiments which have been performed on isotopically controlled semiconductors. A review of the natural isotopic composition of the relevant elements follows. Some materials aspects resulting in part from the high costs of enriched isotopes are discussed next. Raman spectroscopy studies with a number of isotopically pure and deliberately mixed Ge bulk crystals show that the Brillouin-zone-center optical phonons are not localized. Their lifetime is almost independent of isotopic disorder, leading to homogeneous Raman line broadening. Studies with short period isotope superlattices consisting of alternating layers of n atomic planes of 70Ge and 74Ge reveal a host of zone-center phonons due to Brillouin-zone folding. At n≳40 one observes two phonon lines at frequencies corresponding to the bulk values of the two isotopes. In natural diamond, isotope scattering of the low-energy phonons, which are responsible for the thermal conductivity, is very strongly affected by small isotope disorder. Isotopically pure 12C diamond crystals exhibit thermal conductivities as high as 410 W cm-1 K-1 at 104 K, leading to projected values of over 2000 W cm-1 K-1 near 80 K. The changes in phonon properties with isotopic composition also weakly affect the electronic band structures and the lattice constants. The latter isotope dependence is most relevant for future standards of length based on crystal lattice constants. Capture of thermal neutrons by isotope nuclei followed by nuclear decay produces new elements, resulting in a very large number of possibilities for isotope selective doping of semiconductors. This neutron transmutation of isotope nuclei, already used

  1. Progress in semiconductor drift detectors

    SciTech Connect

    Rehak, P.; Walton, J.; Gatti, E.; Longoni, A.; Sanpietro, M.; Kemmer, J.; Dietl, H.; Holl, P.; Klanner, R.; Lutz, G.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements.

  2. Variable temperature semiconductor film deposition

    DOEpatents

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  3. Variable temperature semiconductor film deposition

    DOEpatents

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  4. Fibre ring cavity semiconductor laser

    SciTech Connect

    Duraev, V P; Medvedev, S V

    2013-10-31

    This paper presents a study of semiconductor lasers having a polarisation maintaining fibre ring cavity. We examine the operating principle and report main characteristics of a semiconductor ring laser, in particular in single- and multiple-frequency regimes, and discuss its application areas. (lasers)

  5. Stripline mount for semiconductor lasers

    SciTech Connect

    Dietrich, N.R.; Holbrook, W.R.; Johnson, A.F. Jr.; Zacharias, A.

    1988-08-02

    An arrangement for coupling a semiconductor optical device to a signal source, is described, the arrangement comprising a stripline transmission path having a predetermined characteristic impedance Z/sub 0/; and resistance means connected in series with the stripline transmission path, chosen to provide impedance matching between the stripline transmission path and an associated semiconductor optical device.

  6. Vibrational averages along thermal lines

    NASA Astrophysics Data System (ADS)

    Monserrat, Bartomeu

    2016-01-01

    A method is proposed for the calculation of vibrational quantum and thermal expectation values of physical properties from first principles. Thermal lines are introduced: these are lines in configuration space parametrized by temperature, such that the value of any physical property along them is approximately equal to the vibrational average of that property. The number of sampling points needed to explore the vibrational phase space is reduced by up to an order of magnitude when the full vibrational density is replaced by thermal lines. Calculations of the vibrational averages of several properties and systems are reported, namely, the internal energy and the electronic band gap of diamond and silicon, and the chemical shielding tensor of L-alanine. Thermal lines pave the way for complex calculations of vibrational averages, including large systems and methods beyond semilocal density functional theory.

  7. Ferromagnet/semiconductor based spintronic devices

    NASA Astrophysics Data System (ADS)

    Saha, Dipankar

    Spintronics is an emerging field which is great interest for its potential to provide high-speed and low-power novel devices and eventually replace and/or complement conventional silicon-based metal-oxide-semiconductor (MOS) devices. Spin-based optoelectronic devices provide improved laser performance and polarized light sources for secure communication. Spintronics has therefore received a lot of interest with the potential for conventional and novel applications. Spintronics has been investigated both in all-metal and semiconductor based platforms. Spin-based ferromagnet/semiconductor heterojunction devices are particularly attractive compared to all-metal spintronic devices due to the versatility and the long electron spin coherence time in semiconductors. Here we have investigated semiconductor based spintronic devices for logic, memory and communication applications. We have demonstrated electrical injection and detection of spin in a MnAs/GaAs lateral spin valve. A peak magnetoresistance of 3.6% at 10 K and 1.1% at 125 K have been measured in these devices. Spin polarization in semiconductors is usually very small and difficult to detect. We have therefore theoretically designed and experimentally demonstrated a spin-current amplifier to alleviate this problem. A spin polarization of 100% has been measured at 150 K in these devices. We have emphasized the importance of finite sizes of ferromagnetic contact pads in terms of two-dimensional spin-diffusion in lateral spintronic devices, which enhances spin-polarization. We have discovered a new phenomenon observing electrically driven spin-dynamics of paramagnetic impurities. We have demonstrated a spin-capacitor using this novel phenomenon. In this study we have also demonstrated a spin-polarized quantum dot spin-laser which is a fundamental spin-based optoelectronic device. An output circular polarization of 8% and threshold current reduction of 14% have been measured at 200 K. We have also demonstrated

  8. Physics with isotopically controlled semiconductors

    SciTech Connect

    Haller, E. E.

    2010-07-15

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  9. Photoemission studies of semiconductor nanocrystals

    SciTech Connect

    Hamad, K. S.; Roth, R.; Alivisatos, A. P.

    1997-04-01

    Semiconductor nanocrystals have been the focus of much attention in the last ten years due predominantly to their size dependent optical properties. Namely, the band gap of nanocrystals exhibits a shift to higher energy with decreasing size due to quantum confinement effects. Research in this field has employed primarily optical techniques to study nanocrystals, and in this respect this system has been investigated extensively. In addition, one is able to synthesize monodisperse, crystalline particles of CdS, CdSe, Si, InP, InAs, as well as CdS/HgS/CdS and CdSe/CdS composites. However, optical spectroscopies have proven ambiguous in determining the degree to which electronic excitations are interior or surface admixtures or giving a complete picture of the density of states. Photoemission is a useful technique for understanding the electronic structure of nanocrystals and the effects of quantum confinement, chemical environments of the nanocrystals, and surface coverages. Of particular interest to the authors is the surface composition and structure of these particles, for they have found that much of the behavior of nanocrystals is governed by their surface. Previously, the authors had performed x-ray photoelectron spectroscopy (XPS) on CdSe nanocrystals. XPS has proven to be a powerful tool in that it allows one to determine the composition of the nanocrystal surface.

  10. Averaging of globally coupled oscillators

    NASA Astrophysics Data System (ADS)

    Swift, James W.; Strogatz, Steven H.; Wiesenfeld, Kurt

    1992-03-01

    We study a specific system of symmetrically coupled oscillators using the method of averaging. The equations describe a series array of Josephson junctions. We concentrate on the dynamics near the splay-phase state (also known as the antiphase state, ponies on a merry-go-round, or rotating wave). We calculate the Floquet exponents of the splay-phase periodic orbit in the weak-coupling limit, and find that all of the Floquet exponents are purely imaginary; in fact, all the Floquet exponents are zero except for a single complex conjugate pair. Thus, nested two-tori of doubly periodic solutions surround the splay-phase state in the linearized averaged equations. We numerically integrate the original system, and find startling agreement with the averaging results on two counts: The observed ratio of frequencies is very close to the prediction, and the solutions of the full equations appear to be either periodic or doubly periodic, as they are in the averaged equations. Such behavior is quite surprising from the point of view of generic dynamical systems theory-one expects higher-dimensional tori and chaotic solutions. We show that the functional form of the equations, and not just their symmetry, is responsible for this nongeneric behavior.

  11. Averaging inhomogeneous cosmologies - a dialogue.

    NASA Astrophysics Data System (ADS)

    Buchert, T.

    The averaging problem for inhomogeneous cosmologies is discussed in the form of a disputation between two cosmologists, one of them (RED) advocating the standard model, the other (GREEN) advancing some arguments against it. Technical explanations of these arguments as well as the conclusions of this debate are given by BLUE.

  12. Averaging inhomogenous cosmologies - a dialogue

    NASA Astrophysics Data System (ADS)

    Buchert, T.

    The averaging problem for inhomogeneous cosmologies is discussed in the form of a disputation between two cosmologists, one of them (RED) advocating the standard model, the other (GREEN) advancing some arguments against it. Technical explanations of these arguments as well as the conclusions of this debate are given by BLUE.

  13. Polyhedral Painting with Group Averaging

    ERIC Educational Resources Information Center

    Farris, Frank A.; Tsao, Ryan

    2016-01-01

    The technique of "group-averaging" produces colorings of a sphere that have the symmetries of various polyhedra. The concepts are accessible at the undergraduate level, without being well-known in typical courses on algebra or geometry. The material makes an excellent discovery project, especially for students with some background in…

  14. Electrochemical deposition of Al on semiconductors

    NASA Astrophysics Data System (ADS)

    Laperashvili, Tinatin; Khachidze, Manana; Imerlishvili, Iliy

    2002-11-01

    Samples used for the fabrication of M-S diodes were growing by Chochralski method especially undoped n-type GaP into (III) oriented wafers. The thickness and carrier concentration was 200-250 mimic and (2-4). 10 exp17 atom/cm3 respectively. At first ohmical contact to the one side of wafer was formed by alloying of indium at the temperature 600°C during 5 min in hydrogen. Then the sample with ohmical contact and wire for preceding the power was covered with chemical stable polystyrene solution except the area where the metal will be deposited. The wafers were then ached chemically, rinsed in distilled water and were transferred immediately into electrolyte. Deposition of metal was done by the usual electrochemical method. Electrolyte was poured into quartz glass. The semiconductors wafer was used as the one electrode and as another electrode was used aluminum. For deposition Al the aqueous solution of chlorides have been used as an electrolyte, which consisted also NaOCI. At first, semiconductor"s wafer was used as the anode and cleaning of semiconductors surface was done. Then the potential was immediately changed in opposite direction and deposition of metal on freshly cleaned surface was done in the same solution in a united technological process. After the process of realization the samples were washed in distilled water. The polystyrene film was removed mechanically and boiling in acetone. Then samples were cut into pieces of area 1-3 mm, and were measured electric and photoelectric characteristics. The electrical and photoelectric characteristics have been studded and they were analyzed in the usual way to calculate the ideality factor (n) and barrier height (o). The values of coefficient n and SB height were 1.05-1.07 and 1.1 eV respectively.

  15. High-output-power polarization-insensitive SOA

    NASA Astrophysics Data System (ADS)

    Morito, Ken

    2002-05-01

    An 1550 nm semiconductor optical amplifier (SOA) with a very thin tensile-strained bulk active layer and active width-tapered spot-size converters was developed. The SOA module exhibited a record high saturation output power of +17 dBm together with a low noise figure of 7 dB, large gain of 19 dB and small polarization sensitivity of 0.2 dB. A good eye pattern without waveform distortion due to the pattern effect was obtained for amplified 10 Gb/s NRZ signals up to an average output power of +12 dBm.

  16. Bright Core-Shell Semiconductor Quantum Wires

    PubMed Central

    Liu, Yi-Hsin; Wang, Fudong; Hoy, Jessica; Wayman, Virginia L.; Steinberg, Lindsey K.; Loomis, Richard A.; Buhro, William E.

    2012-01-01

    Colloidal CdTe quantum wires are reported having ensemble photoluminescence efficiencies as high as 25% under low excitation-power densities. High photoluminescence efficiencies are achieved by formation of a monolayer CdS shell on the CdTe quantum wires. Like other semiconductor nanowires, the CdTe quantum wires may contain frequent wurtzite–zinc-blende structural alternations along their lengths. The present results demonstrate that the optical properties, emission-peak shape and photoluminescence efficiencies, are independent of the presence or absence of such structural alternations. PMID:23095017

  17. Diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Anderson, James R.

    1990-03-01

    Growth and physical properties of diluted magnetic semiconductors (DMS) were investigated. Growth included Bridgman, solid state recrystallization, and liquid phase epitaxy of Mercury(1-x)Manganese(x)Telluride and Mercury(1-x-y)Manganese(x)Cadmium(y)Telluride. Very uniform crystals were produced by solid state recrystallization. Physical properties studied included magnetization, optical response, and magnetotransport. From magnetization, the exchange interactions among magnetic ions have been deduced. Modulated spectroscopy gave details of the electronic structure of DMS and the quality of the material was indicated by the line widths. Magnetotransport, carried out in some cases to 30 T, showed a large negative magnetoresistance and subsequent increase. The Hg(1-x-y)Mn(x)Cd(y)Te has considerable promise for avalanche photodiodes between 1.2 and 1.8 micrometers.

  18. Semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  19. Ultrafast thin-disk multipass amplifier with 1.4 kW average power and 4.7 mJ pulse energy at 1030 nm converted to 820 W and 2.7 mJ at 515 nm

    NASA Astrophysics Data System (ADS)

    Negel, Jan-Philipp; Loescher, André; Voss, Andreas; Bauer, Dominik; Sutter, Dirk H.; Killi, Alexander; Abdou Ahmed, Marwan; Graf, Thomas

    2015-02-01

    In recent years, there has been a growing interest in increasing the output power of ultrafast lasers to the kW-range. This allows higher productivity for laser material processing, e.g. for cutting of carbon-fiber reinforced plastics (CFRP) or for micro-machining. We developed an Yb:YAG thin-disk multipass amplifier delivering sub-8 ps pulses with 1.4 kW average power which is - to the best of our knowledge - the highest output power reported for a sub-100 ps ultrafast laser system so far. The amplifier is seeded by a regenerative amplifier with 6.5 ps pulses and 115 W of average power at a repetition rate of 300 kHz. Taking this repetition rate into account, the energy of the amplified pulses is as high as 4.7 mJ. This was achieved using a scheme with 40 mirrors in an array to geometrically fold the seed beam 40 times over the thin-disk. The beam quality was measured to be better than M2=1.4. This system was used in first experiments to cut CFRP with very good quality and with unprecedented efficiency. Additionally, the output beam of the amplifier was frequency-doubled in an LBO crystal to 820 W (70 % conversion efficiency) output power at the second harmonic wavelength (515 nm) and 106 W (26.5 % conversion efficiency) at the third harmonic wavelength (343 nm). Both results are record output powers for ultrafast laser systems at the respective wavelengths. In the presentation, we will show concepts on further power scaling of the system.

  20. High power gain-switched diode laser master oscillator and amplifier

    SciTech Connect

    Poelker, M.

    1995-11-06

    A tapered-stripe, traveling-wave semiconductor optical amplifier was seeded with 3.3 mW of gain-switched diode laser light to obtain over 200 mW average power with pulse widths{approx}105 ps full width at half-maximum (FWHM) and a pulse repetition rate of 499 MHz corresponding to a peak power of 3.8 W. Shorter pulse widths were obtained when the amplifier was driven with less current at the expense of reduced output power. Pulse widths as short as 31 ps FWHM and an average power of 98 mW corresponding to a peak power of 6.3 W were obtained when a different, lower power seed laser was used. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.