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Sample records for band electronic structure

  1. Electronic band structure of defect chalcopyrites

    NASA Astrophysics Data System (ADS)

    Jiang, Xiaoshu; Lambrecht, Walter R. L.

    2001-03-01

    The defect chalcopyrites of chemical composition II-III-VI4 in which II, III and VI mean group-II elements such as Cd or Hg, group-III elements such as Al and Ga and group-VI elements such as S, Se, Te, form an interesting family of semiconductor compounds with potential nonlinear optical applications. They can be thought of as derived from the regular I-III-VI2 chalcopyrites by doubling the formula unit and replacing the group I element, for example, Ag by the group-II element and a vacancy in an ordered manner. The chalcopyrites themselves are derived from II-VI compounds by replacing the group-II by a group I and a group-III element. In this contribution we present electronic band structure calculations of some of these compounds, calculated using the linear muffin-tin orbital method combined with the local density functional approximation. We discuss the relation of the band structures of the corresponding zincblende, chalcopyrite and defect chalcopyrite compounds. In particular, the role of the group I or group II d-band energy will be shown to be important. The trends with chemical substutions and the effects of structural distortions c/a and internal parameters accompanying the chemical distortion will be discussed.

  2. Topological Insulators: Electronic Band Structure and Spectroscopy

    NASA Astrophysics Data System (ADS)

    Palaz, S.; Koc, H.; Mamedov, A. M.; Ozbay, E.

    2017-02-01

    In this study, we present the results of our ab initio calculation of the elastic constants, density of states, charge density, and Born effective charge tensors for ferroelectric (rhombohedral) and paraelectric phases (cubic) of the narrow band ferroelectrics (GeTe, SnTe) pseudopotentials. The related quantities such as bulk modulus and shear modulus using obtained elastic constants have also been estimated in the present work. The total and partial densities of states corresponding to the band structure of Sn(Ge)Te(S,Se) were calculated. We also calculated the Born effective charge tensor of an atom (for instance, Ge, Sn, Te, etc.), which is defined as the induced polarization of the solid along the main direction by a unit displacement in the perpendicular direction of the sublattice of an atom at the vanishing electric field.

  3. Engineering the Electronic Band Structure for Multiband Solar Cells

    SciTech Connect

    Lopez, N.; Reichertz, L.A.; Yu, K.M.; Campman, K.; Walukiewicz, W.

    2010-07-12

    Using the unique features of the electronic band structure of GaNxAs1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the Band Anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

  4. Engineering the electronic band structure for multiband solar cells.

    PubMed

    López, N; Reichertz, L A; Yu, K M; Campman, K; Walukiewicz, W

    2011-01-14

    Using the unique features of the electronic band structure of GaN(x)As(1-x) alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the band anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.

  5. Electronic band structure of surface-doped black phosphorus

    NASA Astrophysics Data System (ADS)

    Kim, Jimin; Ryu, Sae Hee; Sohn, Yeongsup; Kim, Keun Su

    2015-03-01

    There are rapidly growing interests in the study of few-layer black phosphorus owing to its promising device characteristics that may impact our future electronics technology. The low-energy band structure of black phosphorus has been widely predicted to be controllable by external perturbations, such as strain and doping. In this work, we attempt to control the electronic band structure of black phosphorous by in-situ surface deposition of alkali-metal atoms. We found that surface doping induces steep band bending towards the bulk, leading to the emergence of new 2D electronic states that are confined within only few phosphorene layers of black phosphorus. Using angle-resolved photoemission spectroscopy, we directly measured the electronic band structure and its evolution as a function of dopant density. Supported by IBS.

  6. Banded Electron Structure Formation in the Inner Magnetosphere

    NASA Technical Reports Server (NTRS)

    Liemohn, M. W.; Khazanov, G. V.

    1997-01-01

    Banded electron structures in energy-time spectrograms have been observed in the inner magnetosphere concurrent with a sudden relaxation of geomagnetic activity. In this study, the formation of these banded structures is considered with a global, bounce-averaged model of electron transport, and it is concluded that this structure is a natural occurrence when plasma sheet electrons are captured on closed drift paths near the Earth. These bands do not appear unless there is capture of plasma sheet electrons; convection along open drift paths making open pass around the Earth do not have time to develop this feature. The separation of high-energy bands from the injection population due to the preferential advection of the gradient-curvature drift creates spikes in the energy distribution, which overlap to form a series of bands in the energy spectrograms. The lowest band is the bulk of the injected population in the sub-key energy range. Using the Kp history for an observed banded structure event, a cloud of plasma sheet electrons is captured and the development of their distribution function is examined and discussed.

  7. Strain-driven electronic band structure modulation of si nanowires.

    PubMed

    Hong, Ki-Ha; Kim, Jongseob; Lee, Sung-Hoon; Shin, Jai Kwang

    2008-05-01

    One of the major challenges toward Si nanowire (SiNW) based photonic devices is controlling the electronic band structure of the Si nanowire to obtain a direct band gap. Here, we present a new strategy for controlling the electronic band structure of Si nanowires. Our method is attributed to the band structure modulation driven by uniaxial strain. We show that the band structure modulation with lattice strain is strongly dependent on the crystal orientation and diameter of SiNWs. In the case of [100] and [111] SiNWs, tensile strain enhances the direct band gap characteristic, whereas compressive strain attenuates it. [110] SiNWs have a different strain dependence in that both compressive and tensile strain make SiNWs exhibit an indirect band gap. We discuss the origin of this strain dependence based on the band features of bulk silicon and the wave functions of SiNWs. These results could be helpful for band structure engineering and analysis of SiNWs in nanoscale devices.

  8. Electronic band structure and phonons in V2O5

    NASA Astrophysics Data System (ADS)

    Bhandari, Churna; Lambrecht, Walter R. L.

    2013-03-01

    Among the vanadium oxides, V2O5 presents special interest as a layered material. As for other layered materials, it is of interest to search for changes in its electronic structure and phonon spectrum in the monolayer modification of this material. For example, reduced screening may modify phonon modes affected by long-range Coulomb interactions. As a preliminary we here present a first-principles study of the bulk electronic band structure and the phonons at the Γ-point. Density functional calculations in the local density approximation were carried out for the electronic band structure and the density functional perturbation method was used for the phonon calculations. We used LDA and norm-conserving pseudopotentials in the abinit code. A group theoretical analysis is used to label the phonon modes. Non-analyticity is included for the LO modes. The band structures are in good agreement with previous work and yield an indirect band gap. Relaxed structural properties are also in good agreement with experiment. Simulated infrared and Raman spectra will be presented. Our results will be compared with experimental and previous theoretical work.

  9. Electronic band structure of magnetic bilayer graphene superlattices

    SciTech Connect

    Pham, C. Huy; Nguyen, T. Thuong

    2014-09-28

    Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

  10. Electronic structure of graphene: (Nearly) free electron bands versus tight-binding bands

    NASA Astrophysics Data System (ADS)

    Kogan, E.; Silkin, V. M.

    2017-09-01

    In our previous paper (Phys. Rev. B {\\bf 89}, 165430 (2014)) we have found that in graphene, in distinction to the four occupied bands, which can be described by the simple tight-binding model (TBM) with four atomic orbitals per atom, the two lowest lying at the $\\Gamma$-point unoccupied bands (one of them of a $\\sigma$ type and the other of a $\\pi$ type) can not be described by such model. In the present work we suggest a minimalistic model for these two bands, based on (nearly) free electrons model (FEM), which correctly describes the symmetry of these bands, their dispersion law and their localization with respect to the graphene plane.

  11. Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon

    PubMed Central

    Zhu, Zhen; Shao, Hezhu; Dong, Xiao; Li, Ning; Ning, Bo-Yuan; Ning, Xi-Jing; Zhao, Li; Zhuang, Jun

    2015-01-01

    We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can introduce intermediate band in the gap. Considering the stability of the single defects and the rapid resolidification following the laser melting process in our sample preparation method, we conclude that the substitutional nitrogen defect, whose fraction was tiny and could be neglected before, should have considerable fraction in the hyperdoped silicon and results in the visible sub-band-gap absorption as observed in the experiment. Furthermore, our calculations show that the substitutional nitrogen defect has good stability, which could be one of the reasons why the sub-band-gap absorptance remains almost unchanged after annealing. PMID:26012369

  12. Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon.

    PubMed

    Zhu, Zhen; Shao, Hezhu; Dong, Xiao; Li, Ning; Ning, Bo-Yuan; Ning, Xi-Jing; Zhao, Li; Zhuang, Jun

    2015-05-27

    We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can introduce intermediate band in the gap. Considering the stability of the single defects and the rapid resolidification following the laser melting process in our sample preparation method, we conclude that the substitutional nitrogen defect, whose fraction was tiny and could be neglected before, should have considerable fraction in the hyperdoped silicon and results in the visible sub-band-gap absorption as observed in the experiment. Furthermore, our calculations show that the substitutional nitrogen defect has good stability, which could be one of the reasons why the sub-band-gap absorptance remains almost unchanged after annealing.

  13. Band warping, band non-parabolicity, and Dirac points in electronic and lattice structures

    NASA Astrophysics Data System (ADS)

    Resca, Lorenzo; Mecholsky, Nicholas A.; Pegg, Ian L.

    2017-10-01

    We illustrate at a fundamental level the physical and mathematical origins of band warping and band non-parabolicity in electronic and vibrational structures. We point out a robust presence of pairs of topologically induced Dirac points in a primitive-rectangular lattice using a p-type tight-binding approximation. We analyze two-dimensional primitive-rectangular and square Bravais lattices with implications that are expected to generalize to more complex structures. Band warping is shown to arise at the onset of a singular transition to a crystal lattice with a larger symmetry group, which allows the possibility of irreducible representations of higher dimensions, hence band degeneracy, at special symmetry points in reciprocal space. Band warping is incompatible with a multi-dimensional Taylor series expansion, whereas band non-parabolicities are associated with multi-dimensional Taylor series expansions to all orders. Still band non-parabolicities may merge into band warping at the onset of a larger symmetry group. Remarkably, while still maintaining a clear connection with that merging, band non-parabolicities may produce pairs of conical intersections at relatively low-symmetry points. Apparently, such conical intersections are robustly maintained by global topology requirements, rather than any local symmetry protection. For two p-type tight-binding bands, we find such pairs of conical intersections drifting along the edges of restricted Brillouin zones of primitive-rectangular Bravais lattices as lattice constants vary relatively to each other, until these conical intersections merge into degenerate warped bands at high-symmetry points at the onset of a square lattice. The conical intersections that we found appear to have similar topological characteristics as Dirac points extensively studied in graphene and other topological insulators, even though our conical intersections have none of the symmetry complexity and protection afforded by the latter more

  14. Global Kinetic Modeling of Banded Electron Structures in the Plasmasphere

    NASA Technical Reports Server (NTRS)

    Liemohn, M. W.; Khazanov, G. V.

    1997-01-01

    Significant fluxes of 10 eV to 30 keV electrons have been detected in the plasmasphere, appearing as banded structures in energy with broad spatial extents and slowly evolving over several days. It is thought that these populations are decaying plasma sheet electrons injected into the corotating region of near-Earth space. This capture can occur when the convective electric field drops rapidly and the Alfven boundary suddenly outward, trapping the inner edge of the plasma sheet along closed drift paths. Our bounce-averaged kinetic model of superthermal electron transport is able to simulate this capture and the subsequent drift, diffusion, and decay of the plasma cloud. Results of this simulation will be shown and discussed, from the initial injection during the elevated convection to the final loss of the particles. It is thought that not only Coulomb collisions but also wave-particle interactions play a significant role in altering the plasma cloud. Quasilinear diffusion is currently being incorporated into the model and the importance of this mechanism will be examined. Also, the high anisotropy of the trapped population could be unstable and generate plasma waves. These and other processes will be investigated to determine the final fate of the cloud and to quantify where, how, and when the energy of the plasma cloud is deposited. Comparisons with CRRES observations of these events are shown to verify the model and explain the data.

  15. Electron-Phonon Renormalization of Electronic Band Structures of C Allotropes and BN Polymorphs

    NASA Astrophysics Data System (ADS)

    Tutchton, Roxanne M.; Marchbanks, Christopher; Wu, Zhigang

    The effect of lattice vibration on electronic band structures has been mostly neglected in first-principles calculations because the electron-phonon (e-ph) renormalization of quasi-particle energies is often small (< 100 meV). However, in certain materials, such as diamond, the electron-phonon coupling reduces the band gap by nearly 0.5 eV, which is comparable to the many-body corrections of the electronic band structures calculated using the density functional theory (DFT). In this work, we compared two implementations of the Allen-Heine-Cardona theory in the EPW code and the ABINIT package respectively. Our computations of Si and diamond demonstrate that the ABINIT implementation converges much faster. Using this method, the e-ph renormalizations of electronic structures of three C allotropes (diamond, graphite, graphene) and four BN polymorphs (zincblend, wurtzite, mono-layer, and layered-hexagonal) were calculated. Our results suggest that (1) all of the zero-point renormalizations of band gaps in these materials, except for graphene, are larger than 100 meV, and (2) there are large variations in e-ph renormalization of band gaps due to differences in crystal structure. This work was supported by a U.S. DOE Early Career Award (Grant No. DE-SC0006433). Computations were carried out at the Golden Energy Computing Organization at CSM and the National Energy Research Scientific Computing Center (NERSC).

  16. Calculation of 2D electronic band structure using matrix mechanics

    NASA Astrophysics Data System (ADS)

    Pavelich, R. L.; Marsiglio, F.

    2016-12-01

    We extend previous work, applying elementary matrix mechanics to one-dimensional periodic arrays (to generate energy bands), to two-dimensional arrays. We generate band structures for the square-lattice "2D Kronig-Penney model" (square wells), the "muffin-tin" potential (circular wells), and Gaussian wells. We then apply the method to periodic arrays of more than one atomic site in a unit cell, specifically to the case of materials with hexagonal lattices like graphene. These straightforward extensions of undergraduate-level calculations allow students to readily determine band structures of current research interest.

  17. Electronic transitions in GdN band structure

    SciTech Connect

    Vidyasagar, R. Kita, T.; Sakurai, T.; Ohta, H.

    2014-05-28

    Using the near-infrared (NIR) absorbance spectroscopy, electronic transitions and spin polarization of the GdN epitaxial film have been investigated; and the GdN epitaxial film was grown by a reactive rf sputtering technique. The GdN film exhibited three broad bands in the NIR frequency regimes; and those bands are attributable primarily to the minority and majority spin transitions at the X-point and an indirect transition along the Γ-X symmetric direction of GdN Brillouin zone. We experimentally observe a pronounced red-shift of the indirect band gap when cooling down below the Curie temperature which is ascribed to the orbital-dependent coulomb interactions of Gd-5dxy electrons, which tend to push-up the N-2p bands. On the other hand, we have evaluated the spin polarization of 0.17 (±0.005), which indicates that the GdN epitaxial film has almost 100% spin-polarized carriers. Furthermore, the experimental result of GdN electronic transitions are consistent with the previous reports and are thus well-reproduced. The Arrott plots evidenced that the Curie temperature of GdN film is 36 K and the large spin moment is explained by the nitrogen vacancies and the intra-atomic exchange interaction.

  18. Electronic band structure of TiN/MgO nanostructures

    NASA Astrophysics Data System (ADS)

    Kobayashi, Kazuaki; Takaki, Hirokazu; Shimono, Masato; Kobayashi, Nobuhiko; Hirose, Kenji

    2017-04-01

    Various nanostructured TiN(001)/MgO(001) superlattices based on a repeated slab model with a vacuum region have been investigated by the total energy pseudopotential method. They are rectangular and rectangular parallelepiped TiN(001) dot structures on MgO(001)-2×2 and 3×3 substrates. A rectangular TiN(001) structure on a MgO(001)-2×1 substrate has also been calculated. Their detailed electronic and internal lattice properties were investigated systematically. The internal atomic coordinates in a unit cell were fully relaxed. The rectangular TiN(001) structure on the MgO(001)-2×1 superlattice, which is not a dot owing to its periodicity, corresponds to metallicity. The electronic states of relaxed rectangular TiN(001) dot/MgO(001)-2×2 and MgO(001)-3×3 superlattices are semiconducting. All relaxed rectangular parallelepiped TiN(001) dot/MgO(001)-2×2 and MgO(001)-3×3 superlattices correspond to metallicity. The electronic properties depend on the shape of the TiN dot and the size of the MgO substrate.

  19. Electronic band structure effects in the stopping of protons in copper [Electronic band structure non-linear effects in the stopping of protons in copper

    DOE PAGES

    Quashie, Edwin E.; Saha, Bidhan C.; Correa, Alfredo A.

    2016-10-05

    Here, we present an ab initio study of the electronic stopping power of protons in copper over a wide range of proton velocities v = 0.02–10a.u. where we take into account nonlinear effects. Time-dependent density functional theory coupled with molecular dynamics is used to study electronic excitations produced by energetic protons. A plane-wave pseudopotential scheme is employed to solve the time-dependent Kohn-Sham equations for a moving ion in a periodic crystal. The electronic excitations and the band structure determine the stopping power of the material and alter the interatomic forces for both channeling and off-channeling trajectories. Our off-channeling results aremore » in quantitative agreement with experiments, and at low velocity they unveil a crossover region of superlinear velocity dependence (with a power of ~1.5) in the velocity range v = 0.07–0.3a.u., which we associate to the copper crystalline electronic band structure. The results are rationalized by simple band models connecting two separate regimes. We find that the limit of electronic stopping v → 0 is not as simple as phenomenological models suggest and it is plagued by band-structure effects.« less

  20. Electronic band structure effects in the stopping of protons in copper [Electronic band structure non-linear effects in the stopping of protons in copper

    SciTech Connect

    Quashie, Edwin E.; Saha, Bidhan C.; Correa, Alfredo A.

    2016-10-05

    Here, we present an ab initio study of the electronic stopping power of protons in copper over a wide range of proton velocities v = 0.02–10a.u. where we take into account nonlinear effects. Time-dependent density functional theory coupled with molecular dynamics is used to study electronic excitations produced by energetic protons. A plane-wave pseudopotential scheme is employed to solve the time-dependent Kohn-Sham equations for a moving ion in a periodic crystal. The electronic excitations and the band structure determine the stopping power of the material and alter the interatomic forces for both channeling and off-channeling trajectories. Our off-channeling results are in quantitative agreement with experiments, and at low velocity they unveil a crossover region of superlinear velocity dependence (with a power of ~1.5) in the velocity range v = 0.07–0.3a.u., which we associate to the copper crystalline electronic band structure. The results are rationalized by simple band models connecting two separate regimes. We find that the limit of electronic stopping v → 0 is not as simple as phenomenological models suggest and it is plagued by band-structure effects.

  1. Electronic band structure effects in the stopping of protons in copper [Electronic band structure non-linear effects in the stopping of protons in copper

    SciTech Connect

    Quashie, Edwin E.; Saha, Bidhan C.; Correa, Alfredo A.

    2016-10-05

    Here, we present an ab initio study of the electronic stopping power of protons in copper over a wide range of proton velocities v = 0.02–10a.u. where we take into account nonlinear effects. Time-dependent density functional theory coupled with molecular dynamics is used to study electronic excitations produced by energetic protons. A plane-wave pseudopotential scheme is employed to solve the time-dependent Kohn-Sham equations for a moving ion in a periodic crystal. The electronic excitations and the band structure determine the stopping power of the material and alter the interatomic forces for both channeling and off-channeling trajectories. Our off-channeling results are in quantitative agreement with experiments, and at low velocity they unveil a crossover region of superlinear velocity dependence (with a power of ~1.5) in the velocity range v = 0.07–0.3a.u., which we associate to the copper crystalline electronic band structure. The results are rationalized by simple band models connecting two separate regimes. We find that the limit of electronic stopping v → 0 is not as simple as phenomenological models suggest and it is plagued by band-structure effects.

  2. Probing the band structure and local electronic properties of low-dimensional semiconductor structures

    NASA Astrophysics Data System (ADS)

    Walrath, Jenna Cherie

    Low-dimensional semiconductor structures are important for a wide variety of applications, and recent advances in nanoscale fabrication are paving the way for increasingly precise nano-engineering of a wide range of materials. It is therefore essential that the physics of materials at the nanoscale are thoroughly understood to unleash the full potential of nanotechnology, requiring the development of increasingly sophisticated instrumentation and modeling. Of particular interest is the relationship between the local density of states (LDOS) of low-dimensional structures and the band structure and local electronic properties. This dissertation presents the investigation of the band structure, LDOS, and local electronic properties of nanostructures ranging from zero-dimensional (0D) quantum dots (QDs) to two-dimensional (2D) thin films, synthesizing computational and experimental approaches including Poisson-Schrodinger band structure calculations, scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and scanning thermoelectric microscopy (SThEM). A method is presented for quantifying the local Seebeck coefficient (S) with SThEM, using a quasi-3D conversion matrix approach to directly convert temperature gradient-induced voltages S. For a GaAs p-n junction, the resulting S-profile is consistent with that computed using the free carrier concentration profile. This combined computational-experimental approach is expected to enable nanoscale measurements of S across a wide variety of heterostructure interfaces. The local carrier concentration, n, is profiled across epitaxial InAs/GaAs QDs, where SThEM is used to profile the temperature gradient-induced voltage, which is converted to a profile of the local S and finally to an n profile. The S profile is converted to a conduction band-edge profile and compared with Poisson-Schrodinger band-edge simulations. The combined computational-experimental approach suggests a reduced n in the QD center in

  3. Narrow-band anisotropic electronic structure of ReS2

    NASA Astrophysics Data System (ADS)

    Biswas, D.; Ganose, Alex M.; Yano, R.; Riley, J. M.; Bawden, L.; Clark, O. J.; Feng, J.; Collins-Mcintyre, L.; Sajjad, M. T.; Meevasana, W.; Kim, T. K.; Hoesch, M.; Rault, J. E.; Sasagawa, T.; Scanlon, David O.; King, P. D. C.

    2017-08-01

    We have used angle-resolved photoemission spectroscopy to investigate the band structure of ReS2, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of structural distortion and spin-orbit coupling. We further show how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zigzag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone center along kz. These experiments are in good agreement with our density-functional theory calculations, shedding light on the bulk electronic structure of ReS2, and how it can be expected to evolve when thinned to a single layer.

  4. Electron momentum density, band structure, and structural properties of SrS

    SciTech Connect

    Sharma, G.; Munjal, N.; Vyas, V.; Kumar, R.; Sharma, B. K.; Joshi, K. B.

    2013-10-15

    The electron momentum density, the electronic band structure, and the structural properties of SrS are presented in this paper. The isotropic Compton profile, anisotropies in the directional Compton profiles, the electronic band structure and density of states are calculated using the ab initio periodic linear combination of atomic orbitals method with the CRYSTAL06 code. Structural parameters of SrS-lattice constants and bulk moduli in the B1 and B2 phases-are computed together with the transition pressure. The computed parameters are well in agreement with earlier investigations. To compare the calculated isotropic Compton profile, measurement on polycrystalline SrS is performed using 5Ci-{sup 241}Am Compton spectrometer. Additionally, charge transfer is studied by means of the Compton profiles computed from the ionic model. The nature of bonding in the isovalent SrS and SrO compounds is compared on the basis of equal-valenceelectron-density profiles and the bonding in SrS is found to be more covalent than in SrO.

  5. Vibrational structure of defect luminescence bands in GaN from electronic structure calculations

    NASA Astrophysics Data System (ADS)

    Alkauskas, Audrius; van de Walle, Chris G.

    2012-02-01

    Optical methods are among the most powerful to characterize defects in materials. The study of optical signatures based on state-of-the-art electronic structure methods is therefore very important. In this work we investigate the vibrational structure of luminescence bands pertaining to deep defect levels in GaN. Since luminescence lineshapes depend sensitively on defect geometries and vibrational frequencies, these should be described accurately. The latter is achieved through the use of hybrid density functionals. Both quasi-localized and bulk phonons are included in our description. In the case of transitions accompanied by very large lattice relaxations, anharmonic effects become sizeable, and these are also accounted for. For the defects studied a very good agreement with available experimental data is achieved. For instance, in the case of wide luminescence bands the resulting line widths are within 0.05 eV of the experimental values. This work was supported by the Swiss NSF and by NSF.

  6. Electronic band structure effects in monolayer, bilayer, and hybrid graphene structures

    NASA Astrophysics Data System (ADS)

    Puls, Conor

    Since its discovery in 2005, graphene has been the focus of intense theoretical and experimental study owing to its unique two-dimensional band structure and related electronic properties. In this thesis, we explore the electronic properties of graphene structures from several perspectives including the magnetoelectrical transport properties of monolayer graphene, gap engineering and measurements in bilayer graphene, and anomalous quantum oscillation in the monolayer-bilayer graphene hybrids. We also explored the device implications of our findings, and the application of some experimental techniques developed for the graphene work to the study of a complex oxide, Ca3Ru2O7, exhibiting properties of strongly correlated electrons. Graphene's high mobility and ballistic transport over device length scales, make it suitable for numerous applications. However, two big challenges remain in the way: maintaining high mobility in fabricated devices, and engineering a band gap to make graphene compatible with logical electronics and various optical devices. We address the first challenge by experimentally evaluating mobilities in scalable monolayer graphene-based field effect transistors (FETs) and dielectric-covered Hall bars. We find that the mobility is limited in these devices, and is roughly inversely proportional to doping. By considering interaction of graphene's Dirac fermions with local charged impurities at the interface between graphene and the top-gate dielectric, we find that Coulomb scattering is responsible for degraded mobility. Even in the cleanest devices, a band gap is still desirable for electronic applications of graphene. We address this challenge by probing the band structure of bilayer graphene, in which a field-tunable energy band gap has been theoretically proposed. We use planar tunneling spectroscopy of exfoliated bilayer graphene flakes demonstrate both measurement and control of the energy band gap. We find that both the Fermi level and

  7. Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy

    NASA Astrophysics Data System (ADS)

    Wang, Zefang; Zhao, Liang; Mak, Kin Fai; Shan, Jie

    2017-02-01

    We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe2 and MoSe2 by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct spin polarization in the conduction bands of these compounds by a systematic study of the doping dependence of the A and B excitonic resonances. Electrons in the highest-energy valence band and the lowest-energy conduction band have antiparallel spins in monolayer WSe2, and parallel spins in monolayer MoSe2. The spin splitting is determined to be hundreds of meV for the valence bands and tens of meV for the conduction bands, which are in good agreement with first principles calculations. These values also suggest that both n- and p-type WSe2 and MoSe2 can be relevant for spin- and valley-based applications

  8. Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy.

    PubMed

    Wang, Zefang; Zhao, Liang; Mak, Kin Fai; Shan, Jie

    2017-02-08

    We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe2 and MoSe2 by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct spin polarization in the conduction bands of these compounds by a systematic study of the doping dependence of the A and B excitonic resonances. Electrons in the highest-energy valence band and the lowest-energy conduction band have antiparallel spins in monolayer WSe2 and parallel spins in monolayer MoSe2. The spin splitting is determined to be hundreds of meV for the valence bands and tens of meV for the conduction bands, which are in good agreement with first-principles calculations. These values also suggest that both n- and p-type WSe2 and MoSe2 can be relevant for spin- and valley-based applications.

  9. Electronic energy band structure of the double perovskite Ba2MnWO6.

    PubMed

    Fujioka, Yukari; Frantti, Johannes; Nieminen, Risto M

    2008-06-05

    The electronic and magnetic structures of the double perovskite oxide Ba 2MnWO6 (BMW) were determined by employing the density functional theory within the generalized gradient approximation (GGA) + U approach. BMW is considered a prototype double perovskite due to its high degree of B-site ordering and is a good case study for making a comparison between computations and experiments. By adjusting the U-parameter, the electronic energy band structure and magnetic properties, which were consistent with the experimental results, were obtained. These computations revealed that the valence bands are mainly formed from Mn 3d and O 2p states, while the conduction bands are derived from W 5d and O 2p states. The localized bands composed from Mn 3d states are located in the bandgap. The results imply that the formation of polarons in the conduction band initiate the resonance Raman modes observed as a series of equidistant peaks.

  10. Effects of extrinsic and intrinsic perturbations on the electronic structure of graphene: Retaining an effective primitive cell band structure by band unfolding

    NASA Astrophysics Data System (ADS)

    Medeiros, Paulo V. C.; Stafström, Sven; Björk, Jonas

    2014-01-01

    We use a band unfolding technique to recover an effective primitive cell picture of the band structure of graphene under the influence of different types of perturbations. This involves intrinsic perturbations, such as structural defects, and external ones, comprising nitrogen substitutions and the inclusion of graphene in adsorbed systems. In such cases, the band unfolding provides a reliable and efficient tool for quantitatively analyzing the effect of doping and defects on the electronic structure of graphene. We envision that this approach will become a standard method in the computational analysis of graphene's electronic structure in related systems.

  11. Observation of interface band structure by ballistic-electron-emission microscopy

    NASA Technical Reports Server (NTRS)

    Bell, L. D.; Kaiser, W. J.

    1988-01-01

    The paper reports an advanced ballistic electron spectroscopy technique that was used to directly measure semiconductor band structure properties at a subsurface interface. Two interface systems having contrasting band structures were investigated by this method: Au-Si and Au-GaAs. It is concluded that the proposed method, based on scanning tunneling microscopy, enables the spatially resolved carrier-transport spectroscopy of interfaces.

  12. Observation of interface band structure by ballistic-electron-emission microscopy

    NASA Technical Reports Server (NTRS)

    Bell, L. D.; Kaiser, W. J.

    1988-01-01

    The paper reports an advanced ballistic electron spectroscopy technique that was used to directly measure semiconductor band structure properties at a subsurface interface. Two interface systems having contrasting band structures were investigated by this method: Au-Si and Au-GaAs. It is concluded that the proposed method, based on scanning tunneling microscopy, enables the spatially resolved carrier-transport spectroscopy of interfaces.

  13. Electronic band structures of graphene nanoribbons with self-passivating edge reconstructions

    NASA Astrophysics Data System (ADS)

    Nguyen, L. Tung; Pham, C. Huy; Nguyen, V. Lien

    2011-07-01

    Using the nearest-neighbor tight-binding approach we study the electronic band structures of graphene nanoribbons with self-passivating edge reconstructions. For zigzag ribbons the edge reconstruction moves both the Fermi energy and the flat band down by several hundred meV, and the flat band is always found to be below the Fermi energy. The states featured by the flat band are shown to be mainly localized at the atoms belonging to several lattice lines closest to the edges. For armchair ribbons the edge reconstruction strongly modifies the band structure in the region close to the Fermi energy, leading to the appearance of a band gap even for ribbons which were predicted to be metallic in the model of standard armchair edges. The gap widths are, however, strongly different in magnitude and behave in different ways regarding the ribbon width.

  14. Coexisting Honeycomb and Kagome Characteristics in the Electronic Band Structure of Molecular Graphene.

    PubMed

    Paavilainen, Sami; Ropo, Matti; Nieminen, Jouko; Akola, Jaakko; Räsänen, Esa

    2016-06-08

    We uncover the electronic structure of molecular graphene produced by adsorbed CO molecules on a copper (111) surface by means of first-principles calculations. Our results show that the band structure is fundamentally different from that of conventional graphene, and the unique features of the electronic states arise from coexisting honeycomb and Kagome symmetries. Furthermore, the Dirac cone does not appear at the K-point but at the Γ-point in the reciprocal space and is accompanied by a third, almost flat band. Calculations of the surface structure with Kekulé distortion show a gap opening at the Dirac point in agreement with experiments. Simple tight-binding models are used to support the first-principles results and to explain the physical characteristics behind the electronic band structures.

  15. Ab initio electronic band structure study of the valence bands of II-VI C(2 × 2) reconstructed surfaces

    NASA Astrophysics Data System (ADS)

    Rubio-Ponce, A.; Olguín, D.

    2015-01-01

    The structural and electronic properties of CdTe(001), CdSe(001), and ZnSe(001) C(2 x 2) reconstructed surfaces have been investigated through the use of first-principles calculations. To simulate the surface, we employed the slab model. Using the experimentally determined lattice parameters as inputs, we relaxed the internal atomic positions of the outer atomic layers. We demonstrate that our model appropriately reproduces both the surface structural parameters and the known electronic properties found for these semiconductor compounds in bulk. Finally, we discuss our results of the projected bulk bands and the surface and resonance states found for these surfaces.

  16. Band like Electronic Structures in Square Hollow Quantum Dots by 3D-MHFKS Calculation

    NASA Astrophysics Data System (ADS)

    Takizawa, Tokihiro; Okada, Hoshihito; Matsuse, Takehiro

    To find novel aspects of the electronic structures in quantum dots (QD) from a view point of spatial broken symmetry, 3-dimensional-mesh Hartree-Fock-Kohn-Sham (3D-MHFKS) calculations1 are applied to the interacting electron system of electron number N in a symmetry broken hollow QD. For the case of a square hollow quantum dot confined in square hard wall (HW) potential (SSHQD), the magnetic (B) field dependence of the obtained single particle energy levels and chemical potentials in B-N diagram are shown to have a band like electronic structures over the wide B-field range up to 20T. To clarify the origin of the band like electronic structures in SSHQD, 3D-MHFKS calculations are also applied for the mixed symmetry QD's with a circular hollow in square HW potential (SCHQD) and with a square hollow in circular HW potential (CSHQD).

  17. Topological band order, structural, electronic and optical properties of XPdBi (X = Lu, Sc) compounds

    NASA Astrophysics Data System (ADS)

    Narimani, M.; Nourbakhsh, Z.

    2016-05-01

    In this paper, the structural, electronic and optical properties of LuPdBi and ScPdBi compounds are investigated using the density functional theory by WIEN2K package within the generalized gradient approximation, local density approximation, Engel-Vosco generalized gradient approximations and modified Becke-Johnson potential approaches. The topological phases and band orders of these compounds are studied. The effect of pressure on band inversion strength, electron density of states and the linear coefficient of the electronic specific heat of these compounds is investigated. Furthermore, the effect of pressure on real and imaginary parts of dielectric function, absorption and reflectivity coefficients of these compounds is studied.

  18. Observation of 'Band' Structures in Spacecraft Observations of Inner Magnetosphere Plasma Electrons

    NASA Astrophysics Data System (ADS)

    Mohan Narasimhan, Kirthika; Fazakerley, Andrew; Milhaljcic, Branislav; Grimald, Sandrine; Dandouras, Iannis; Owen, Chris

    2013-04-01

    In previous studies, several authors have reported inner magnetosphere observations of proton distributions confined to narrow energy bands in the range of 1-25 keV. These structures have been known as "nose structures", with reference to their appearance in energy-time spectrograms and are known as "bands" if they are observed for extended periods of time. These proton structures have been studied quite extensively with multiple mechanisms proposed for their formation, not all of which apply for electrons. We examine Double-Star TC1 PEACE electron data recorded in the inner magnetosphere (L<15) near the equatorial plane to see if these features are also observed in the electron energy spectra. These "bands" also appear in electron spectrograms, spanning an energy range of 0.2-30 keV, and are shown to occur predominantly towards the dayside and dusk sectors. We also see multiple bands in some instances. We investigate the properties of these multi-banded structures and carry out a statistical survey analysing them as a function of geomagnetic activity, looking at both the Kp and Auroral Indices, in an attempt to explain their presence.

  19. Exploring the Electronic Band Structure of Organometal Halide Perovskite via Photoluminescence Anisotropy of Individual Nanocrystals.

    PubMed

    Täuber, Daniela; Dobrovolsky, Alexander; Camacho, Rafael; Scheblykin, Ivan G

    2016-08-10

    Understanding electronic processes in organometal halide perovskites, flourishing photovoltaic, and emitting materials requires unraveling the origin of their electronic transitions. Light polarization studies can provide important information regarding transition dipole moment orientations. Investigating individual methylammonium lead triiodide perovskite nanocrystals enabled us to detect the polarization of photoluminescence intensity and photoluminescence excitation, hidden in bulk samples by ensemble averaging. Polarization properties of the crystals were correlated with their photoluminescence spectra and electron microscopy images. We propose that distortion of PbI6 octahedra leads to peculiarities of the electronic band structure close to the band-edge. Namely, the lowest band transition possesses a transition dipole moment along the apical Pb-I-Pb bond resulting in polarized photoluminescence. Excitation of photoluminescence above the bandgap is unpolarized because it involves molecular orbitals delocalized both in the apical and equatorial directions of the perovskite octahedron. Trap-assisted emission at 77 K, rather surprisingly, was polarized similar to the bandgap emission.

  20. Reconstruction of band structure induced by electronic nematicity in an FeSe superconductor.

    PubMed

    Nakayama, K; Miyata, Y; Phan, G N; Sato, T; Tanabe, Y; Urata, T; Tanigaki, K; Takahashi, T

    2014-12-05

    We have performed high-resolution angle-resolved photoemission spectroscopy on an FeSe superconductor (T_{c}∼8  K), which exhibits a tetragonal-to-orthorhombic structural transition at T_{s}∼90  K. At low temperature, we found splitting of the energy bands as large as 50 meV at the M point in the Brillouin zone, likely caused by the formation of electronically driven nematic states. This band splitting persists up to T∼110  K, slightly above T_{s}, suggesting that the structural transition is triggered by the electronic nematicity. We have also revealed that at low temperature the band splitting gives rise to a van Hove singularity within 5 meV of the Fermi energy. The present result strongly suggests that this unusual electronic state is responsible for the unconventional superconductivity in FeSe.

  1. The electronic structures of vanadate salts: Cation substitution as a tool for band gap manipulation

    NASA Astrophysics Data System (ADS)

    Dolgos, Michelle R.; Paraskos, Alexandra M.; Stoltzfus, Matthew W.; Yarnell, Samantha C.; Woodward, Patrick M.

    2009-07-01

    The electronic structures of six ternary metal oxides containing isolated vanadate ions, Ba 3(VO 4) 2, Pb 3(VO 4) 2, YVO 4, BiVO 4, CeVO 4 and Ag 3VO 4 were studied using diffuse reflectance spectroscopy and electronic structure calculations. While the electronic structure near the Fermi level originates largely from the molecular orbitals of the vanadate ion, both experiment and theory show that the cation can strongly influence these electronic states. The observation that Ba 3(VO 4) 2 and YVO 4 have similar band gaps, both 3.8 eV, shows that cations with a noble gas configuration have little impact on the electronic structure. Band structure calculations support this hypothesis. In Pb 3(VO 4) 2 and BiVO 4 the band gap is reduced by 0.9-1.0 eV through interactions of (a) the filled cation 6 s orbitals with nonbonding O 2 p states at the top of the valence band, and (b) overlap of empty 6 p orbitals with antibonding V 3 d-O 2 p states at the bottom of the conduction band. In Ag 3VO 4 mixing between filled Ag 4 d and O 2 p states destabilizes states at the top of the valence band leading to a large decrease in the band gap ( Eg=2.2 eV). In CeVO 4 excitations from partially filled 4 f orbitals into the conduction band lower the effective band gap to 1.8 eV. In the Ce 1-xBi xVO 4 (0≤ x≤0.5) and Ce 1-xY xVO 4 ( x=0.1, 0.2) solid solutions the band gap narrows slightly when Bi 3+ or Y 3+ are introduced. The nonlinear response of the band gap to changes in composition is a result of the localized nature of the Ce 4 f orbitals.

  2. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    SciTech Connect

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; Hozumi, Hideaki; Gao, Yongqian; Eda, Goki; Mattevi, Cecilia; Fujita, Takeshi; Yoshigoe, Akitaka; Ishizuka, Shinji; Adamska, Lyudmyla; Yamada, Takatoshi; Dattelbaum, Andrew M.; Gupta, Gautam; Doorn, Stephen K.; Velizhanin, Kirill A.; Teraoka, Yuden; Chen, Mingwei; Htoon, Han; Chhowalla, Manish; Mohite, Aditya D.; Takakuwa, Yuji

    2016-09-01

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

  3. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    DOE PAGES

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; ...

    2016-09-01

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a setmore » of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.« less

  4. Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

    SciTech Connect

    Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; Hozumi, Hideaki; Gao, Yongqian; Eda, Goki; Mattevi, Cecilia; Fujita, Takeshi; Yoshigoe, Akitaka; Ishizuka, Shinji; Adamska, Lyudmyla; Yamada, Takatoshi; Dattelbaum, Andrew M.; Gupta, Gautam; Doorn, Stephen K.; Velizhanin, Kirill A.; Teraoka, Yuden; Chen, Mingwei; Htoon, Han; Chhowalla, Manish; Mohite, Aditya D.; Takakuwa, Yuji

    2016-09-01

    We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

  5. The LDA+U calculation of electronic band structure of GaAs

    SciTech Connect

    Bahuguna, B. P. Sharma, R. O.; Saini, L. K.

    2016-05-06

    We present the electronic band structure of bulk gallium arsenide (GaAs) using first principle approach. A series of calculations has been performed by applying norm-conserving pseudopotentials and ultrasoft non-norm-conserving pseudopotentials within the density functional theory. These calculations yield too small band gap as compare to experiment. Thus, we use semiemperical approach called local density approximation plus the multi-orbital mean-field Hubbard model (LDA+U), which is quite effective in order to describe the band gap of GaAs.

  6. Engineering the electronic structure and band gap of boron nitride nanoribbon via external electric field

    NASA Astrophysics Data System (ADS)

    Chegel, Raad

    2016-06-01

    By using the third nearest neighbor modified tight binding (3NN-TB) method, the electronic structure and band gap of BNNRs under transverse electric fields are explored. The band gap of the BNNRs has a decreasing with increasing the intensity of the applied electric field, independent on the ribbon edge types. Furthermore, an analytic model for the dependence of the band gap in armchair and zigzag BNNRs on the electric field is proposed. The reduction of E g is similar for some N a armchair and N z zigzag BNNRs independent of their edges.

  7. Electronic band structure effects in the stopping of protons in copper

    NASA Astrophysics Data System (ADS)

    Quashie, Edwin E.; Saha, Bidhan C.; Correa, Alfredo A.

    2016-10-01

    We present an ab initio study of the electronic stopping power of protons in copper over a wide range of proton velocities v =0.02 -10 a .u . where we take into account nonlinear effects. Time-dependent density functional theory coupled with molecular dynamics is used to study electronic excitations produced by energetic protons. A plane-wave pseudopotential scheme is employed to solve the time-dependent Kohn-Sham equations for a moving ion in a periodic crystal. The electronic excitations and the band structure determine the stopping power of the material and alter the interatomic forces for both channeling and off-channeling trajectories. Our off-channeling results are in quantitative agreement with experiments, and at low velocity they unveil a crossover region of superlinear velocity dependence (with a power of ˜1.5 ) in the velocity range v =0.07 -0.3 a .u . , which we associate to the copper crystalline electronic band structure. The results are rationalized by simple band models connecting two separate regimes. We find that the limit of electronic stopping v →0 is not as simple as phenomenological models suggest and it is plagued by band-structure effects.

  8. Electronic band structures and excitonic properties of delafossites: A GW-BSE study

    NASA Astrophysics Data System (ADS)

    Wang, Xiaoming; Meng, Weiwei; Yan, Yanfa

    2017-08-01

    We report the band structures and excitonic properties of delafossites CuMO2 (M=Al, Ga, In, Sc, Y, Cr) calculated using the state-of-the-art GW-BSE approach. We evaluate different levels of self-consistency of the GW approximations, namely G0W0, GW0, GW, and QSGW, on the band structures and find that GW0, in general, predicts the band gaps in better agreement with experiments considering the electron-hole effect. For CuCrO2, the HSE wave function is used as the starting point for the perturbative GW0 calculations, since it corrects the band orders wrongly predicted by PBE. The discrepancy about the valence band characters of CuCrO2 is classified based on both HSE and QSGW calculations. The PBE wave functions, already good, are used for other delafossites. All the delafossites are shown to be indirect band gap semiconductors with large exciton binding energies, varying from 0.24 to 0.44 eV, in consistent with experimental findings. The excitation mechanisms are explained by examining the exciton amplitude projections on the band structures. Discrepancies compared with experiments are also addressed. The lowest and strongest exciton, mainly contributed from either Cu 3d → Cu 3p (Al, Ga, In) or Cu 3d → M 3d (M = Sc, Y, Cr) transitions, is always located at the L point of the rhombohedral Brillouin zone.

  9. Enlarged band gap and electron switch in graphene-based step-barrier structure

    SciTech Connect

    Lu, Wei-Tao Ye, Cheng-Zhi; Li, Wen

    2013-11-04

    We study the transmission through a step-barrier in gapped graphene and propose a method to enlarge the band gap. The step-barrier structure consists of two or more barriers with different strengths. It is found that the band gap could be effectively enlarged and controlled by adjusting the barrier strengths in the light of the mass term. Klein tunneling at oblique incidence is suppressed due to the asymmetry of step-barrier, contrary to the cases in single-barrier and superlattices. Furthermore, a tunable conductance channel could be opened up in the conductance gap, suggesting an application of the structure as an electron switch.

  10. Microstructure and electronic band structure of pulsed laser deposited iron fluoride thin film for battery electrodes.

    PubMed

    Santos-Ortiz, Reinaldo; Volkov, Vyacheslav; Schmid, Stefan; Kuo, Fang-Ling; Kisslinger, Kim; Nag, Soumya; Banerjee, Rajarshi; Zhu, Yimei; Shepherd, Nigel D

    2013-04-10

    Battery electrodes in thin-film form are free of the binders used with traditional powder electrodes and present an ideal platform to obtain basic insight to the evolution of the electrode-electrolyte interface passivation layer, the formation of secondary phases, and the structural underpinnings of reversibility. This is particularly relevant to the not yet fully understood conversion electrode materials, which possess enormous potential for providing transformative capacity improvements in next-generation lithium-ion batteries. However, this necessitates an understanding of the electronic charge transport properties and band structure of the thin films. This work presents an investigation of the electron transport properties of iron fluoride (FeF2) thin-film electrodes for Li-ion batteries. FeF2 thin films were prepared by pulsed-laser deposition, and their phase purity was characterized by electron microscopy and diffraction. The grown materials are polycrystalline FeF2 with a P42/mnm crystallographic symmetry. Room-temperature Hall measurements reveal that as-deposited FeF2 is n-type: the Hall coefficients were negative, electron mobility was 0.33 cm2/(V s) and resistivity was 0.255 Ω cm. The electronic band diagram of FeF2 was obtained using a combination of ultraviolet photoelectron spectroscopy, photoluminescence, photoluminescence excitation and optical absorption, which revealed that FeF2 is a direct bandgap, n-type semiconductor whose band structure is characterized by a 3.4 eV bandgap, a workfunction of ∼4.51 eV, and an effective Fermi level that resides approximately 0.22 eV below the conduction band edge. We propose that the shallow donor levels at 0.22 eV are responsible for the measured n-type conductivity. The band diagram was used to understand electron transport in FeF2 thin film and FeF2-C composite electrodes.

  11. Electronic band structure, doping, and defects in the semiconducting Half Heusler compound CoTiSb

    NASA Astrophysics Data System (ADS)

    Kawasaki, Jason; Johansson, Linda; Hjort, Martin; Timm, Rainer; Schultz, Brian; Balasubramanian, Thiagarajan; Mikkelsen, Anders; Palmstrom, Chris

    2013-03-01

    We report transport and electronic band structure measurements on epitaxial films of the Half Heusler compound CoTiSb. CoTiSb belongs to the family of Half Heuslers with 18 valence electrons per formula unit that are predicted to be semiconducting despite being composed of all metallic components. Here the CoTiSb films were grown by molecular beam epitaxy on a lattice matched InAlAs buffer. The films are epitaxial and single crystalline, as measured by reflection high-energy electron diffraction and X-ray diffraction. Scanning tunnelling spectroscopy and temperature-dependent transport measurements reveal that the films are semiconducting, with unintentionally doped carrier concentrations comparable to that of highly doped conventional compound semiconductors. These carrier concentrations can be modulated by doping with Sn. The band structure of the films was measured by angle resolved photoemission spectroscopy at the MAX-Lab Synchrotron facility. The bulk bands are in general agreement with density functional theory calculations, with a valence band maximum at Γ and surface states within the bulk band gap. The effects of defects are explored in order to explain the ARPES results. This work was supported by the ARO, AFOSR, ONR, and NSF.

  12. Effects of electron band structure on neutrino pair bremsstrahlung in neutron star crusts

    SciTech Connect

    Pethick, C.J. |

    1997-12-01

    We calculate the rate of energy emission by bremsstrahlung of neutrino pairs by electrons moving in the crystalline lattice of ions in dense matter in the crust of a neutron star. Since the periodic potential in the solid gives rise to electronic band gaps which can be as large as about 1 MeV, it is necessary in estimating the bremsstrahlung rate at low temperatures to take into account band structure in detail. We find that, in the densest parts of the inner crust of a neutron star, neutrino emission at temperatures of about 2{times}10{sup 9}K or less is much suppressed compared with earlier estimates that treated the electron-lattice interaction perturbatively, and conclude that neutrino pair bremsstrahlung by electrons in the crusts of neutron stars is much less important for neutron star thermal evolution than was previously thought. {copyright} {ital 1997} {ital The American Physical Society}

  13. Electronic- and band-structure evolution in low-doped (Ga,Mn)As

    SciTech Connect

    Yastrubchak, O.; Gluba, L.; Żuk, J.; Sadowski, J.; Krzyżanowska, H.; Domagala, J. Z.; Andrearczyk, T.; Wosinski, T.

    2013-08-07

    Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free-hole concentration. The experimental results are consistent with the valence-band origin of mobile holes mediating ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor.

  14. Understanding the electronic band structure of Pt-alloys for surface reactivity

    NASA Astrophysics Data System (ADS)

    Jung, Jongkeun; Kim, Beomyoung; Hong, Ji Sook; Jin, Tae Won; Shim, Ji Hoon; Nemsak, Slavomir; Denlinger, Jonathan D.; Masashi, Arita; Kenya, Shimada; Kim, Changyoung; Mun, Bongjin Simon

    In polymer exchange membrane fuel cell (PEMFC), the oxygen reduction reaction (ORR) at cathode side has been continuously investigated due to its critical importance in performance of fuel cell. So far, even with best industrial catalyst made with Pt, the performance of ORR is too far below from the commercial purpose. In 2007, Stamenkovic et al. showed that Pt alloys with 3- dtransition metal exhibited significantly improved ORR performance and pointed out the altered electronic structure of surface as the major contributing factor for enhanced ORR. Since 1990, with the advance of DFT calculation, the trend of surface chemical reactivity is explained with the analysis of d-band structures, known as d-band model. While d-band provides valid insight on surface chemical reactivity based on the valence band DOS, the relation between surface work function and DOS has not been well understood. The element-specific local electronic band structure of Pt alloys are identified by ARPES measurement, and the correlation between surface work function and local charge density is investigated.

  15. Monoclinic Tungsten Oxide with {100} Facet Orientation and Tuned Electronic Band Structure for Enhanced Photocatalytic Oxidations.

    PubMed

    Zhang, Ning; Chen, Chen; Mei, Zongwei; Liu, Xiaohe; Qu, Xiaolei; Li, Yunxiang; Li, Siqi; Qi, Weihong; Zhang, Yuanjian; Ye, Jinhua; Roy, Vellaisamy A L; Ma, Renzhi

    2016-04-27

    Exploring surface-exposed highly active crystal facets for photocatalytic oxidations is promising in utilizing monoclinic WO3 semiconductor. However, the previously reported highly active facets for monoclinic WO3 were mainly toward enhancing photocatalytic reductions. Here we report that the WO3 with {100} facet orientation and tuned surface electronic band structure can effectively enhance photocatalytic oxidation properties. The {100} faceted WO3 single crystals are synthesized via a facile hydrothermal method. The UV-visible diffuse reflectance, X-ray photoelectron spectroscopy valence band spectra, and photoelectrochemical measurements suggest that the {100} faceted WO3 has a much higher energy level of valence band maximum compared with the normal WO3 crystals without preferred orientation of the crystal face. The density functional theory calculations reveal that the shift of O 2p and W 5d states in {100} face induce a unique band structure. In comparison with the normal WO3, the {100} faceted WO3 exhibits an O2 evolution rate about 5.1 times in water splitting, and also shows an acetone evolution rate of 4.2 times as well as CO2 evolution rate of 3.8 times in gaseous degradation of 2-propanol. This study demonstrates an efficient crystal face engineering route to tune the surface electronic band structure for enhanced photocatalytic oxidations.

  16. The electronic structures of vanadate salts: Cation substitution as a tool for band gap manipulation

    SciTech Connect

    Dolgos, Michelle R.; Paraskos, Alexandra M.; Stoltzfus, Matthew W.; Yarnell, Samantha C.; Woodward, Patrick M.

    2009-07-15

    The electronic structures of six ternary metal oxides containing isolated vanadate ions, Ba{sub 3}(VO{sub 4}){sub 2}, Pb{sub 3}(VO{sub 4}){sub 2}, YVO{sub 4}, BiVO{sub 4}, CeVO{sub 4} and Ag{sub 3}VO{sub 4} were studied using diffuse reflectance spectroscopy and electronic structure calculations. While the electronic structure near the Fermi level originates largely from the molecular orbitals of the vanadate ion, both experiment and theory show that the cation can strongly influence these electronic states. The observation that Ba{sub 3}(VO{sub 4}){sub 2} and YVO{sub 4} have similar band gaps, both 3.8 eV, shows that cations with a noble gas configuration have little impact on the electronic structure. Band structure calculations support this hypothesis. In Pb{sub 3}(VO{sub 4}){sub 2} and BiVO{sub 4} the band gap is reduced by 0.9-1.0 eV through interactions of (a) the filled cation 6s orbitals with nonbonding O 2p states at the top of the valence band, and (b) overlap of empty 6p orbitals with antibonding V 3d-O 2p states at the bottom of the conduction band. In Ag{sub 3}VO{sub 4} mixing between filled Ag 4d and O 2p states destabilizes states at the top of the valence band leading to a large decrease in the band gap (E{sub g}=2.2 eV). In CeVO{sub 4} excitations from partially filled 4f orbitals into the conduction band lower the effective band gap to 1.8 eV. In the Ce{sub 1-x}Bi{sub x}VO{sub 4} (0<=x<=0.5) and Ce{sub 1-x}Y{sub x}VO{sub 4} (x=0.1, 0.2) solid solutions the band gap narrows slightly when Bi{sup 3+} or Y{sup 3+} are introduced. The nonlinear response of the band gap to changes in composition is a result of the localized nature of the Ce 4f orbitals. - Graphical abstract: The electronic structures of six vanadate salts, Ba{sub 3}(VO{sub 4}){sub 2}, Pb{sub 3}(VO{sub 4}){sub 2}, YVO{sub 4}, BiVO{sub 4}, Ag{sub 3}VO{sub 4} and CeVO{sub 4}, are studied. The results show that the oxygen to vanadium charge transfer, which is largely responsible for the

  17. Electronic band structure and Fermi surface of ferromagnetic Tb: Experiment and theory

    NASA Astrophysics Data System (ADS)

    Döbrich, K. M.; Bihlmayer, G.; Starke, K.; Prieto, J. E.; Rossnagel, K.; Koh, H.; Rotenberg, E.; Blügel, S.; Kaindl, G.

    2007-07-01

    We have investigated the bulk valence-band structure of Tb metal in the ferromagnetic phase by angle-resolved photoelectron spectroscopy and full-potential-linearized-augmented-plane-wave calculations. The experiments were performed at undulator beamline 7.0.1 of the Advanced Light Source using a three-axis rotatable low-temperature goniometer and a display-type photoelectron spectrometer that give access to a large region of momentum space. The results of our calculations, which make use of recent progress in the theoretical description of the magnetic properties of 4f metals, are in remarkably good agreement with experiment. This can be best seen from a comparison of the electronic structure in high-symmetry directions, at critical points, on Fermi contours, and at band crossings with the Fermi level. To our knowledge, the present work represents the most detailed combined experimental and theoretical study of the electronic structure of a magnetic lanthanide metal to date.

  18. Doping and strain dependence of the electronic band structure in Ge and GeSn alloys

    NASA Astrophysics Data System (ADS)

    Xu, Chi; Gallagher, James; Senaratne, Charutha; Brown, Christopher; Fernando, Nalin; Zollner, Stefan; Kouvetakis, John; Menendez, Jose

    2015-03-01

    A systematic study of the effect of dopants and strain on the electronic structure of Ge and GeSn alloys is presented. Samples were grown by UHV-CVD on Ge-buffered Si using Ge3H8 and SnD4 as the sources of Ge and Sn, and B2H6/P(GeH3)3 as dopants. High-energy critical points in the joint-density of electronic states were studied using spectroscopic ellipsometry, which yields detailed information on the strain and doping dependence of the so-called E1, E1 +Δ1 , E0' and E2 transitions. The corresponding dependencies of the lowest direct band gap E0 and the fundamental indirect band gap Eindwere studied via room-T photoluminescence spectroscopy. Of particular interest for this work were the determination of deformation potentials, band gap renormalization effects, Burstein-Moss shifts due to the presence of carriers at band minima, and the dependence of other critical point parameters, such as amplitudes and phase angles, on the doping concentration. The selective blocking of transitions due to high doping makes it possible to investigate the precise k-space location of critical points. These studies are complemented with detailed band-structure calculations within a full-zone k-dot- p approach. Supported by AFOSR under DOD AFOSR FA9550-12-1-0208 and DOD AFOSR FA9550-13-1-0022.

  19. Electronic band structure and optical properties of the cubic, Sc, Y and La hydride systems

    SciTech Connect

    Peterman, D.J.

    1980-01-01

    Electronic band structure calculations are used to interpret the optical spectra of the cubic Sc, Y and La hydride systems. Self-consistent band calculations of ScH/sub 2/ and YH/sub 2/ were carried out. The respective joint densities of states are computed and compared to the dielectric functions determined from the optical measurements. Additional calculations were performed in which the Fermi level or band gap energies are rigidly shifted by a small energy increment. These calculations are then used to simulate the derivative structure in thermomodulation spectra and relate the origin of experimental interband features to the calculated energy bands. While good systematic agreement is obtained for several spectral features, the origin of low-energy interband transitions in YH/sub 2/ cannot be explained by these calculated bands. A lattice-size-dependent premature occupation of octahedral sites by hydrogen atoms in the fcc metal lattice is suggested to account for this discrepancy. Various non-self-consistent calculations are used to examine the effect of such a premature occupation. Measurements of the optical absorptivity of LaH/sub x/ with 1.6 < x < 2.9 are presented which, as expected, indicate a more premature occupation of the octahedral sites in the larger LaH/sub 2/ lattice. These experimental results also suggest that, in contrast to recent calculations, LaH/sub 3/ is a small-band-gap semiconductor.

  20. Impact of the Electronic Band Structure in High-Harmonic Generation Spectra of Solids

    NASA Astrophysics Data System (ADS)

    Tancogne-Dejean, Nicolas; Mücke, Oliver D.; Kärtner, Franz X.; Rubio, Angel

    2017-02-01

    An accurate analytic model describing the microscopic mechanism of high-harmonic generation (HHG) in solids is derived. Extensive first-principles simulations within a time-dependent density-functional framework corroborate the conclusions of the model. Our results reveal that (i) the emitted HHG spectra are highly anisotropic and laser-polarization dependent even for cubic crystals; (ii) the harmonic emission is enhanced by the inhomogeneity of the electron-nuclei potential; the yield is increased for heavier atoms; and (iii) the cutoff photon energy is driver-wavelength independent. Moreover, we show that it is possible to predict the laser polarization for optimal HHG in bulk crystals solely from the knowledge of their electronic band structure. Our results pave the way to better control and optimize HHG in solids by engineering their band structure.

  1. Impact of the Electronic Band Structure in High-Harmonic Generation Spectra of Solids.

    PubMed

    Tancogne-Dejean, Nicolas; Mücke, Oliver D; Kärtner, Franz X; Rubio, Angel

    2017-02-24

    An accurate analytic model describing the microscopic mechanism of high-harmonic generation (HHG) in solids is derived. Extensive first-principles simulations within a time-dependent density-functional framework corroborate the conclusions of the model. Our results reveal that (i) the emitted HHG spectra are highly anisotropic and laser-polarization dependent even for cubic crystals; (ii) the harmonic emission is enhanced by the inhomogeneity of the electron-nuclei potential; the yield is increased for heavier atoms; and (iii) the cutoff photon energy is driver-wavelength independent. Moreover, we show that it is possible to predict the laser polarization for optimal HHG in bulk crystals solely from the knowledge of their electronic band structure. Our results pave the way to better control and optimize HHG in solids by engineering their band structure.

  2. Effect of the d electrons on the electronic band structure of the valence bands of IIb-VIa C (2 × 2) reconstructed surfaces: GGA+U calculation

    NASA Astrophysics Data System (ADS)

    Rubio-Ponce, A.; Olguín, D.

    2017-06-01

    The structural and electronic properties of the ZnSe(001), ZnTe(001), CdSe(001), and CdTe(001) C (2 × 2) reconstructed surfaces have been studied using first principles calculations. To study the influence of the cation d states on the surface and resonance states of the valence bands, we have used the GGA+U approach. From a relaxation procedure of the reconstructed surface, we show that our model properly reproduces the electronic properties found in the bulk for these semiconductor compounds, as well as the known surface structural parameters.

  3. Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

    SciTech Connect

    Yastrubchak, O.; Sadowski, J.; Domagala, J. Z.; Andrearczyk, T.; Wosinski, T.

    2014-08-18

    Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.

  4. Electron band structure of the high pressure cubic phase of AlH3

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Zarifi, Niliffar; Yim, Wai-Leung; Tse, J. S.

    2012-07-01

    The electronic band structure of the cubic Pm3n phase of AlH3 stable above 100 GPa is examined with semi-local, Tran-Blaha modified Becke-Johnson local density approximation (TB-mBJLDA), screened hybrid density functionals and GW methods. The shift of the conduction band to higher energy with increasing pressure is predicted by all methods. However, there are significant differences in detail band structure. In the pressure range from 90 to160 GPa, semi-local, hybrid functional and TB-mBJLDA calculations predicted that AlH3 is a poor metal. In comparison, GW calculations show a gap opening at 160 GPa and AlH3 becomes a small gap semi-conductor. From the trends of the calculated band shifts, it can be concluded that the favourable conditions leading to the nesting of Fermi surfaces predicted by semi-local calculation have disappeared if the exchange term is included. The results highlight the importance of the correction to the exchange energy on the band structure of hydrogen dominant dense metal hydrides at high pressure hydrides and may help to rationalize the absence of superconductivity in AlH3 from experimental measurements.

  5. Electronic band structure and optical properties of antimony selenide under pressure

    SciTech Connect

    Abhijit, B.K.; Jayaraman, Aditya; Molli, Muralikrishna

    2016-05-23

    In this work we present the optical properties of Antimony Selenide (Sb{sub 2}Se{sub 3}) under ambient conditions and under pressure of 9.2 GPa obtained using first principles calculations. We investigated the electronic band structure using the FP-LAPW method within the sphere of the density functional theory. Optical properties like refractive index, absorption coefficient and optical conductivity are calculated using the WIEN2k code.

  6. Banded Structures in Electron Pitch Angle Diffusion Coefficients from Resonant Wave Particle Interactions

    NASA Technical Reports Server (NTRS)

    Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-01-01

    Electron pitch angle (D (alpha)) and momentum (D(pp)) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L = 4.6 and 6.8 for electron energies 10 keV. Landau (n = 0) resonance and cyclotron harmonic resonances n = +/-1, +/-2,...+/-5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (alpha) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n = +1 and n = +2. A major contribution to momentum diffusion coefficients appears from n = +2. However, the banded structures in D alpha and Dpp coefficients appear only in the profile of diffusion coefficients for n = +2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The Dpp diffusion coefficient for ECH waves is one to two orders smaller than D alpha coefficients. For chorus waves, Dpp coefficients are about an order of magnitude smaller than D alpha coefficients for the case n does not = 0. In case of Landau resonance, the values of Dpp coefficient are generally larger than the values of D alpha coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89 deg and harmonic resonances n = +1, +2, and +3, whereas for whistler mode waves, the frequencies have been calculated for angle

  7. Banded Structures in Electron Pitch Angle Diffusion Coefficients from Resonant Wave-Particle Interactions

    NASA Technical Reports Server (NTRS)

    Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-01-01

    Electron pitch angle (D(sub (alpha alpha))) and momentum (D(sub pp)) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L=4.6 and 6.8 for electron energies less than or equal to 10 keV. Landau (n=0) resonance and cyclotron harmonic resonances n= +/- 1, +/-2, ... +/-5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (alpha) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n=+1 and n=+2. A major contribution to momentum diffusion coefficients appears from n=+2. However, the banded structures in D(sub alpha alpha) and D(sub pp) coefficients appear only in the profile of diffusion coefficients for n=+2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The D(sub pp) diffusion coefficient for ECH waves is one to two orders smaller than D(sub alpha alpha) coefficients. For chorus waves, D(sub pp) coefficients are about an order of magnitude smaller than D(sub alpha alpha) coefficients for the case n does not equal 0. In case of Landau resonance, the values of D(sub pp) coefficient are generally larger than the values of D(sub alpha alpha) coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89 deg and harmonic resonances

  8. Banded Structures in Electron Pitch Angle Diffusion Coefficients from Resonant Wave Particle Interactions

    NASA Technical Reports Server (NTRS)

    Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-01-01

    Electron pitch angle (D (alpha)) and momentum (D(pp)) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L = 4.6 and 6.8 for electron energies 10 keV. Landau (n = 0) resonance and cyclotron harmonic resonances n = +/-1, +/-2,...+/-5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (alpha) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n = +1 and n = +2. A major contribution to momentum diffusion coefficients appears from n = +2. However, the banded structures in D alpha and Dpp coefficients appear only in the profile of diffusion coefficients for n = +2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The Dpp diffusion coefficient for ECH waves is one to two orders smaller than D alpha coefficients. For chorus waves, Dpp coefficients are about an order of magnitude smaller than D alpha coefficients for the case n does not = 0. In case of Landau resonance, the values of Dpp coefficient are generally larger than the values of D alpha coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89 deg and harmonic resonances n = +1, +2, and +3, whereas for whistler mode waves, the frequencies have been calculated for angle

  9. Electronic structure descriptor for the discovery of narrow-band red-emitting phosphors

    DOE PAGES

    Wang, Zhenbin; Chu, Iek -Heng; Zhou, Fei; ...

    2016-05-09

    Narrow-band red-emitting phosphors are a critical component of phosphor-converted light-emitting diodes for highly efficient illumination-grade lighting. In this work, we report the discovery of a quantitative descriptor for narrow-band Eu2+-activated emission identified through a comparison of the electronic structures of known narrow-band and broad-band phosphors. We find that a narrow emission bandwidth is characterized by a large splitting of more than 0.1 eV between the two highest Eu2+ 4f7 bands. By incorporating this descriptor in a high-throughput first-principles screening of 2259 nitride compounds, we identify five promising new nitride hosts for Eu2+-activated red-emitting phosphors that are predicted to exhibit goodmore » chemical stability, thermal quenching resistance, and quantum efficiency, as well as narrow-band emission. Lastly, our findings provide important insights into the emission characteristics of rare-earth activators in phosphor hosts and a general strategy to the discovery of phosphors with a desired emission peak and bandwidth.« less

  10. Electronic structure descriptor for the discovery of narrow-band red-emitting phosphors

    SciTech Connect

    Wang, Zhenbin; Chu, Iek -Heng; Zhou, Fei; Ong, Shyue Ping

    2016-05-09

    Narrow-band red-emitting phosphors are a critical component of phosphor-converted light-emitting diodes for highly efficient illumination-grade lighting. In this work, we report the discovery of a quantitative descriptor for narrow-band Eu2+-activated emission identified through a comparison of the electronic structures of known narrow-band and broad-band phosphors. We find that a narrow emission bandwidth is characterized by a large splitting of more than 0.1 eV between the two highest Eu2+ 4f7 bands. By incorporating this descriptor in a high-throughput first-principles screening of 2259 nitride compounds, we identify five promising new nitride hosts for Eu2+-activated red-emitting phosphors that are predicted to exhibit good chemical stability, thermal quenching resistance, and quantum efficiency, as well as narrow-band emission. Lastly, our findings provide important insights into the emission characteristics of rare-earth activators in phosphor hosts and a general strategy to the discovery of phosphors with a desired emission peak and bandwidth.

  11. Interacting quasi-band theory for electronic states in compound semiconductor alloys: Wurtzite structure

    NASA Astrophysics Data System (ADS)

    Kishi, Ayaka; Oda, Masato; Shinozuka, Yuzo

    2016-05-01

    This paper reports on the electronic states of compound semiconductor alloys of wurtzite structure calculated by the recently proposed interacting quasi-band (IQB) theory combined with empirical sp3 tight-binding models. Solving derived quasi-Hamiltonian 24 × 24 matrix that is characterized by the crystal parameters of the constituents facilitates the calculation of the conduction and valence bands of wurtzite alloys for arbitrary concentrations under a unified scheme. The theory is applied to III-V and II-VI wurtzite alloys: cation-substituted Al1- x Ga x N and Ga1- x In x N and anion-substituted CdS1- x Se x and ZnO1- x S x . The obtained results agree well with the experimental data, and are discussed in terms of mutual mixing between the quasi-localized states (QLS) and quasi-average bands (QAB): the latter bands are approximately given by the virtual crystal approximation (VCA). The changes in the valence and conduction bands, and the origin of the band gap bowing are discussed on the basis of mixing character.

  12. Electronic structure descriptor for the discovery of narrow-band red-emitting phosphors

    SciTech Connect

    Wang, Zhenbin; Chu, Iek -Heng; Zhou, Fei; Ong, Shyue Ping

    2016-05-09

    Narrow-band red-emitting phosphors are a critical component of phosphor-converted light-emitting diodes for highly efficient illumination-grade lighting. In this work, we report the discovery of a quantitative descriptor for narrow-band Eu2+-activated emission identified through a comparison of the electronic structures of known narrow-band and broad-band phosphors. We find that a narrow emission bandwidth is characterized by a large splitting of more than 0.1 eV between the two highest Eu2+ 4f7 bands. By incorporating this descriptor in a high-throughput first-principles screening of 2259 nitride compounds, we identify five promising new nitride hosts for Eu2+-activated red-emitting phosphors that are predicted to exhibit good chemical stability, thermal quenching resistance, and quantum efficiency, as well as narrow-band emission. Lastly, our findings provide important insights into the emission characteristics of rare-earth activators in phosphor hosts and a general strategy to the discovery of phosphors with a desired emission peak and bandwidth.

  13. Ab initio electronic structure of a small band gap polymer: Poly-aminosquaraine

    NASA Astrophysics Data System (ADS)

    Brocks, G.

    1995-02-01

    Poly-aminosquaraine is the prototype of a class of organic polymers which recently has been shown to provide a route towards small band gap materials. We predict that poly-aminosquaraine has a small band gap of ˜0.5 eV. Our prediction is based upon a detailed analysis of first-principles calculations of the geometrical and the electronic structure, using the Car-Parrinello technique of simultaneous optimization. We analyze the bands around the Fermi level in terms of a simple tight-binding model based upon the highest occupied and lowest occupied (HOMO/LUMO) states of the individual squaraine molecules. The small band gap of the polymer is shown to be the result of the small splitting between the occupied and the unoccupied states of the squaraine molecule combined with a favorable hybridization in the polymer. It should be possible to analyze the electronic structure of a wide class of squaraine based polymers in the same way.

  14. Ab initio electronic band structure study of III-VI layered semiconductors

    NASA Astrophysics Data System (ADS)

    Olguín, Daniel; Rubio-Ponce, Alberto; Cantarero, Andrés

    2013-08-01

    We present a total energy study of the electronic properties of the rhombohedral γ-InSe, hexagonal ɛ-GaSe, and monoclinic GaTe layered compounds. The calculations have been done using the full potential linear augmented plane wave method, including spin-orbit interaction. The calculated valence bands of the three compounds compare well with angle resolved photoemission measurements and a discussion of the small discrepancies found has been given. The present calculations are also compared with recent and previous band structure calculations available in the literature for the three compounds. Finally, in order to improve the calculated band gap value we have used the recently proposed modified Becke-Johnson correction for the exchange-correlation potential.

  15. W-Band Free Electron Laser for High Gradient Structure Research

    NASA Astrophysics Data System (ADS)

    Lidia, S. M.; Whittum, D. H.; Donohue, J. T.

    1997-05-01

    We discuss the use of a free electron laser in support of material stress studies of W-band high-gradient accelerating structures. We propose the use of the linear induction accelerator LELIA (CEA/CESTA, France) to generate a 1-kiloamp, 80-ns FWHM electron pulse. We present a design for a helical FEL TE_11 amplifier that will generate high peak power (100's MW) at 93 GHz. We support our design with analytical estimates of gain, and with numerical simulations of power and phase development.

  16. High-throughput combinatorial database of electronic band structures for inorganic scintillator materials.

    PubMed

    Setyawan, Wahyu; Gaume, Romain M; Lam, Stephanie; Feigelson, Robert S; Curtarolo, Stefano

    2011-07-11

    For the purpose of creating a database of electronic structures of all the known inorganic compounds, we have developed a computational framework based on high-throughput ab initio calculations (AFLOW) and an online repository (www.aflowlib.org). In this article, we report the first step of this task: the calculation of band structures for 7439 compounds intended for the research of scintillator materials for γ-ray radiation detection. Data-mining is performed to select the candidates from 193,456 compounds compiled in the Inorganic Crystal Structure Database. Light yield and scintillation nonproportionality are predicted based on semiempirical band gaps and effective masses. We present a list of materials, potentially bright and proportional, and focus on those exhibiting small effective masses and effective mass ratios.

  17. Correlation between morphology, electron band structure, and resistivity of Pb atomic chains on the Si(5 5 3)-Au surface.

    PubMed

    Jałochowski, M; Kwapiński, T; Łukasik, P; Nita, P; Kopciuszyński, M

    2016-07-20

    Structural and electron transport properties of multiple Pb atomic chains fabricated on the Si(5 5 3)-Au surface are investigated using scanning tunneling spectroscopy, reflection high electron energy diffraction, angular resolved photoemission electron spectroscopy and in situ electrical resistance. The study shows that Pb atomic chains growth modulates the electron band structure of pristine Si(5 5 3)-Au surface and hence changes its sheet resistivity. Strong correlation between chains morphology, electron band structure and electron transport properties is found. To explain experimental findings a theoretical tight-binding model of multiple atomic chains interacting on effective substrate is proposed.

  18. Correlation between morphology, electron band structure, and resistivity of Pb atomic chains on the Si(5 5 3)-Au surface

    NASA Astrophysics Data System (ADS)

    Jałochowski, M.; Kwapiński, T.; Łukasik, P.; Nita, P.; Kopciuszyński, M.

    2016-07-01

    Structural and electron transport properties of multiple Pb atomic chains fabricated on the Si(5 5 3)-Au surface are investigated using scanning tunneling spectroscopy, reflection high electron energy diffraction, angular resolved photoemission electron spectroscopy and in situ electrical resistance. The study shows that Pb atomic chains growth modulates the electron band structure of pristine Si(5 5 3)-Au surface and hence changes its sheet resistivity. Strong correlation between chains morphology, electron band structure and electron transport properties is found. To explain experimental findings a theoretical tight-binding model of multiple atomic chains interacting on effective substrate is proposed.

  19. Giant amplification in degenerate band edge slow-wave structures interacting with an electron beam

    SciTech Connect

    Othman, Mohamed A. K.; Veysi, Mehdi; Capolino, Filippo; Figotin, Alexander

    2016-03-15

    We propose a new amplification regime based on a synchronous operation of four degenerate electromagnetic (EM) modes in a slow-wave structure and the electron beam, referred to as super synchronization. These four EM modes arise in a Fabry-Pérot cavity when degenerate band edge (DBE) condition is satisfied. The modes interact constructively with the electron beam resulting in superior amplification. In particular, much larger gains are achieved for smaller beam currents compared to conventional structures based on synchronization with only a single EM mode. We demonstrate giant gain scaling with respect to the length of the slow-wave structure compared to conventional Pierce type single mode traveling wave tube amplifiers. We construct a coupled transmission line model for a loaded waveguide slow-wave structure exhibiting a DBE, and investigate the phenomenon of giant gain via super synchronization using the Pierce model generalized to multimode interaction.

  20. Giant amplification in degenerate band edge slow-wave structures interacting with an electron beam

    NASA Astrophysics Data System (ADS)

    Othman, Mohamed A. K.; Veysi, Mehdi; Figotin, Alexander; Capolino, Filippo

    2016-03-01

    We propose a new amplification regime based on a synchronous operation of four degenerate electromagnetic (EM) modes in a slow-wave structure and the electron beam, referred to as super synchronization. These four EM modes arise in a Fabry-Pérot cavity when degenerate band edge (DBE) condition is satisfied. The modes interact constructively with the electron beam resulting in superior amplification. In particular, much larger gains are achieved for smaller beam currents compared to conventional structures based on synchronization with only a single EM mode. We demonstrate giant gain scaling with respect to the length of the slow-wave structure compared to conventional Pierce type single mode traveling wave tube amplifiers. We construct a coupled transmission line model for a loaded waveguide slow-wave structure exhibiting a DBE, and investigate the phenomenon of giant gain via super synchronization using the Pierce model generalized to multimode interaction.

  1. Spin-resolved electronic band structure of fct-cobalt (100) (abstract)

    NASA Astrophysics Data System (ADS)

    Schneider, C. M.; Schuster, P.; Hammond, M.; Ebert, H.; Noffke, J.; Kirschner, J.

    1991-04-01

    The spin-polarized electronic structure of the fcc high-temperature modification of cobalt has not been investigated yet, because of the experimental difficulties of photoemission at high temperature. We stabilized fcc Co by molecular-beam epitaxy on a Cu(100) substrate with large, atomically flat terasses (0.5-1 μm wide) as revealed by STM. The structure of the layers was studied by LEED and MEED, showing a tetragonal distortion of the fcc lattice perpendicular to the (100) surface plane. The dispersion of the exchange split bands perpendicular to the surface was determined for a 5-monolayer-thick sample (tetragonal distortion on average 4%-5%) by spin- and momentum-resolved photoemission. The results are compared to two relativistic spin-polarized band-structure calculations for fcc cobalt. Somewhat surprisingly, even a 5-ML-thick sample shows three-dimensional dispersion in good agreement with the calculations, as far as the average exchange splitting (1.2±0.2 eV), and the symmetry character of the bands is concerned. There are, however, some systematic deviations of minority bands near the Fermi energy which are attributed to the tetragonal compression.

  2. Adsorbate-induced modification of electronic band structure of epitaxial Bi(111) films

    NASA Astrophysics Data System (ADS)

    Matetskiy, A. V.; Bondarenko, L. V.; Tupchaya, A. Y.; Gruznev, D. V.; Eremeev, S. V.; Zotov, A. V.; Saranin, A. A.

    2017-06-01

    Changes of the electronic band structure of Bi(111) films on Si(111) induced by Cs and Sn adsorption have been studied using angle-resolved photoemission spectroscopy and density functional theory calculations. It has been found that small amounts of Cs when it presents at the surface in a form of the adatom gas leads to shifting of the surface and quantum well states to the higher binding energies due to the electron donation from adsorbate to the Bi film. In contrast, adsorbed Sn dissolves into the Bi film bulk upon heating and acts as an acceptor dopant, that results in shifting of the surface and quantum well states upward to the lower binding energies. These results pave the way to manipulate with the Bi thin film electron band structure allowing to achieve a certain type of conductivity (electron or hole) with a single spin channel at the Fermi level making the adsorbate-modified Bi a reliable base for prospective spintronics applications.

  3. Electronic band structure imaging of three layer twisted graphene on single crystal Cu(111)

    SciTech Connect

    Marquez Velasco, J.; Kelaidis, N.; Xenogiannopoulou, E.; Tsoutsou, D.; Tsipas, P.; Speliotis, Th.; Pilatos, G.; Likodimos, V.; Falaras, P.; Dimoulas, A.; Raptis, Y. S.

    2013-11-18

    Few layer graphene (FLG) is grown on single crystal Cu(111) by Chemical Vapor Deposition, and the electronic valence band structure is imaged by Angle-Resolved Photo-Emission Spectroscopy. It is found that graphene essentially grows polycrystalline. Three nearly ideal Dirac cones are observed along the Cu Γ{sup ¯}K{sup ¯} direction in k-space, attributed to the presence of ∼4° twisted three layer graphene with negligible interlayer coupling. The number of layers and the stacking order are compatible with Raman data analysis demonstrating the complementarity of the two techniques for a more accurate characterization of FLG.

  4. Physical properties and electronic band structure of noncentrosymmetric Th7Co3 superconductor.

    PubMed

    Sahakyan, M; Tran, V H

    2016-05-25

    The physical properties of the noncentrosymmetric superconductor Th7Co3 have been investigated by means of ac-magnetic susceptibility, magnetization, specific heat, electrical resistivity, magnetoresistance and Hall effect measurements. From these data it is established that Th7Co3 is a dirty type-II superconductor with [Formula: see text] K, [Formula: see text] and moderate electron-phonon coupling [Formula: see text]. Some evidences for anisotropic superconducting gap are found, including e.g. reduced specific heat jump ([Formula: see text]) at T c, diminished superconducting energy gap ([Formula: see text]) as compared to the BCS values, power law field dependence of the Sommerfeld coefficient at 0.4 K ([Formula: see text]), and a concave curvature of the [Formula: see text] line. The magnitudes of the thermodynamic critical field and the energy gap are consistent with mean-squared anisotropy parameter [Formula: see text]. The electronic specific heat in the superconducting state is reasonably fitted to an oblate spheroidal gap model. Calculations of scalar relativistic and fully relativistic electronic band structures reveal considerable differences in the degenerate structure, resulting from asymmetric spin-orbit coupling (ASOC). A large splitting energy of spin-up spin-down bands at the Fermi level E F, [Formula: see text] meV is observed and a sizeable ratio [Formula: see text] could classify the studied compound into the class of noncentrosymmetric superconductors with strong ASOC. The noncentrosymmetry of the crystal structure and the atomic relativistic effects are both responsible for an importance of ASOC in Th7Co3. The calculated results for the density of states show a Van Hove singularity just below E F and dominant role of the 6d electrons of Th to the superconductivity.

  5. Banded structures in electron pitch angle diffusion coefficients from resonant wave-particle interactions

    SciTech Connect

    Tripathi, A. K. Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

    2016-04-15

    Electron pitch angle (D{sub αα}) and momentum (D{sub pp}) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L = 4.6 and 6.8 for electron energies ≤10 keV. Landau (n = 0) resonance and cyclotron harmonic resonances n = ±1, ±2, … ±5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (α) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n = +1 and n = +2. A major contribution to momentum diffusion coefficients appears from n = +2. However, the banded structures in D{sub αα} and D{sub pp} coefficients appear only in the profile of diffusion coefficients for n = +2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The D{sub pp} diffusion coefficient for ECH waves is one to two orders smaller than D{sub αα} coefficients. For chorus waves, D{sub pp} coefficients are about an order of magnitude smaller than D{sub αα} coefficients for the case n ≠ 0. In case of Landau resonance, the values of D{sub pp} coefficient are generally larger than the values of D{sub αα} coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89° and harmonic resonances n = +1, +2, and +3

  6. Band-structure-based collisional model for electronic excitations in ion-surface collisions

    SciTech Connect

    Faraggi, M.N.; Gravielle, M.S.; Alducin, M.; Silkin, V.M.; Juaristi, J.I.

    2005-07-15

    Energy loss per unit path in grazing collisions with metal surfaces is studied by using the collisional and dielectric formalisms. Within both theories we make use of the band-structure-based (BSB) model to represent the surface interaction. The BSB approach is based on a model potential and provides a precise description of the one-electron states and the surface-induced potential. The method is applied to evaluate the energy lost by 100 keV protons impinging on aluminum surfaces at glancing angles. We found that when the realistic BSB description of the surface is used, the energy loss obtained from the collisional formalism agrees with the dielectric one, which includes not only binary but also plasmon excitations. The distance-dependent stopping power derived from the BSB model is in good agreement with available experimental data. We have also investigated the influence of the surface band structure in collisions with the Al(100) surface. Surface-state contributions to the energy loss and electron emission probability are analyzed.

  7. Microstructure, optical property, and electronic band structure of cuprous oxide thin films

    SciTech Connect

    Park, Jun-Woo; Jang, Hyungkeun; Kim, Sung; Choi, Suk-Ho; Lee, Hosun; Kang, Joongoo; Wei, Su-Huai

    2011-11-15

    Cuprous oxide (Cu{sub 2}O) thin films were grown via radio frequency sputtering deposition at various temperatures. The dielectric functions and luminescence properties of the Cu{sub 2}O thin films were measured using spectroscopic ellipsometry and photoluminescence, respectively. High-energy peaks were observed in the photoluminescence spectra. Several critical points (CPs) were found using second derivative spectra of the dielectric functions and the standard critical point model. The electronic band structure and the dielectric functions were calculated using density functional theory, and the CP energies were estimated to compare with the experimental data. We identified the high-energy photoluminescence peaks to quasi-direct transitions which arose from the granular structures of the Cu{sub 2}O thin films.

  8. The electronic and transport properties of monolayer transition metal dichalcogenides: a complex band structure analysis

    NASA Astrophysics Data System (ADS)

    Szczesniak, Dominik

    Recently, monolayer transition metal dichalcogenides have attracted much attention due to their potential use in both nano- and opto-electronics. In such applications, the electronic and transport properties of group-VIB transition metal dichalcogenides (MX2 , where M=Mo, W; X=S, Se, Te) are particularly important. Herein, new insight into these properties is presented by studying the complex band structures (CBS's) of MX2 monolayers while accounting for spin-orbit coupling effects. By using the symmetry-based tight-binding model a nonlinear generalized eigenvalue problem for CBS's is obtained. An efficient method for solving such class of problems is presented and gives a complete set of physically relevant solutions. Next, these solutions are characterized and classified into propagating and evanescent states, where the latter states present not only monotonic but also oscillatory decay character. It is observed that some of the oscillatory evanescent states create characteristic complex loops at the direct band gaps, which describe the tunneling currents in the MX2 materials. The importance of CBS's and tunneling currents is demonstrated by the analysis of the quantum transport across MX2 monolayers within phase field matching theory. Present work has been prepared within the Qatar Energy and Environment Research Institute (QEERI) grand challenge ATHLOC project (Project No. QEERI- GC-3008).

  9. Band edge electronic structure of transition metal/rare earth oxide dielectrics

    NASA Astrophysics Data System (ADS)

    Lucovsky, Gerald

    2006-10-01

    This article addresses band edge electronic structure of transition metal/rare earth (TM/RE) non-crystalline and nano-crystalline elemental and complex oxide high- k dielectrics for advanced semiconductor devices. Experimental approaches include X-ray absorption spectroscopy (XAS) from TM, RE and oxygen core states, photoconductivity (PC), and visible/vacuum ultra-violet (UV) spectroscopic ellipsometry (SE) combined with ab initio theory is applied to small clusters. These measurements are complemented by Fourier transform infra-red absorption (FTIR), X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Two issues are highlighted: Jahn-Teller term splittings that remove d-state degeneracies of states at the bottom of the conduction band, and chemical phase separation and crystallinity in Zr and Hf silicates and ternary (Zr(Hf)O 2) x(Si 3N 4) y(SiO 2) 1- x- y alloys. Engineering solutions for optimization of both classes of high- k dielectric films, including limits imposed on the continued and ultimate scaling of the equivalent oxide thickness (EOT) are addressed.

  10. Correlating structure and electronic band-edge properties in organolead halide perovskites nanoparticles.

    PubMed

    Zhu, Qiushi; Zheng, Kaibo; Abdellah, Mohamed; Generalov, Alexander; Haase, Dörthe; Carlson, Stefan; Niu, Yuran; Heimdal, Jimmy; Engdahl, Anders; Messing, Maria E; Pullerits, Tonu; Canton, Sophie E

    2016-06-01

    After having emerged as primary contenders in the race for highly efficient optoelectronics materials, organolead halide perovskites (OHLP) are now being investigated in the nanoscale regime as promising building blocks with unique properties. For example, unlike their bulk counterpart, quantum dots of OHLP are brightly luminescent, owing to large exciton binding energies that cannot be rationalized solely on the basis of quantum confinement. Here, we establish the direct correlation between the structure and the electronic band-edge properties of CH3NH3PbBr3 nanoparticles. Complementary structural and spectroscopic measurements probing long-range and local order reveal that lattice strain influences the nature of the valence band and modifies the subtle stereochemical activity of the Pb(2+) lone-pair. More generally, this work demonstrates that the stereochemical activity of the lone-pair at the metal site is a specific physicochemical parameter coupled to composition, size and strain, which can be employed to engineer novel functionalities in OHLP nanomaterials.

  11. Electronic structure and optical properties of noncentrosymmetric LiGaSe2: Experimental measurements and DFT band structure calculations

    NASA Astrophysics Data System (ADS)

    Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Ananchenko, L. N.; Isaenko, L. I.; Yelisseyev, A. P.; Khyzhun, O. Y.

    2017-04-01

    We report on measurements of X-ray photoelectron (XP) spectra for pristine and Ar+ ion-irradiated surfaces of LiGaSe2 single crystal grown by Bridgman-Stockbarger method. Electronic structure of the LiGaSe2 compound is studied from a theoretical and experimental viewpoint. In particular, total and partial densities of states of LiGaSe2 are investigated by density functional theory (DFT) calculations employing the augmented plane wave + local orbitals (APW + lo) method and they are verified by data of X-ray spectroscopy measurements. The DFT calculations indicate that the main contributors to the valence band of LiGaSe2 are the Se 4p states, which contribute mainly at the top and in the upper portion of the valence band, with also essential contributions of these states in the lower portion of the band. Other substantial contributions to the valence band of LiGaSe2 emerge from the Ga 4s and Ga 4p states contributing mainly at the lower ant upper portions of the valence band, respectively. With respect to the conduction band, the calculations indicate that its bottom is composed mainly from contributions of the unoccupied Ga s and Se p states. The present calculations are confirmed experimentally when comparing the XP valence-band spectrum of the LiGaS2 single crystal on a common energy scale with the X-ray emission bands representing the energy distribution of the Ga 4p and Se 4p states. Measurements of the fundamental absorption edges at room temperature reveal that bandgap value, Eg, of LiGaSe2 is equal to 3.47 eV and the Eg value increases up to 3.66 eV when decreasing temperature to 80 K. The main optical characteristics of the LiGaSe2 compound are clarified by the DFT calculations.

  12. Physical properties and electronic band structure of noncentrosymmetric Th7Co3 superconductor

    NASA Astrophysics Data System (ADS)

    Sahakyan, M.; Tran, V. H.

    2016-05-01

    The physical properties of the noncentrosymmetric superconductor Th7Co3 have been investigated by means of ac-magnetic susceptibility, magnetization, specific heat, electrical resistivity, magnetoresistance and Hall effect measurements. From these data it is established that Th7Co3 is a dirty type-II superconductor with {{T}\\text{c}}=1.8+/- 0.02 K, Hc2\\text{orb}<{{H}c2}(0)˜ 10~\\text{kOe}c2p and moderate electron-phonon coupling {λ\\text{el-\\text{ph}}}=0.56 . Some evidences for anisotropic superconducting gap are found, including e.g. reduced specific heat jump (Δ {{C}p}/γ {{T}\\text{c}}=1.01 ) at T c, diminished superconducting energy gap ({{Δ }0}/{{k}\\text{B}}{{T}\\text{c}}=2.17 ) as compared to the BCS values, power law field dependence of the Sommerfeld coefficient at 0.4 K ({{C}p}/T\\propto {{H}0.6} ), and a concave curvature of the {{H}c2}≤ft({{T}\\text{c}}\\right) line. The magnitudes of the thermodynamic critical field and the energy gap are consistent with mean-squared anisotropy parameter < {{a}2}> ˜ 0.23 . The electronic specific heat in the superconducting state is reasonably fitted to an oblate spheroidal gap model. Calculations of scalar relativistic and fully relativistic electronic band structures reveal considerable differences in the degenerate structure, resulting from asymmetric spin-orbit coupling (ASOC). A large splitting energy of spin-up spin-down bands at the Fermi level E F, Δ {{E}\\text{ASOC}}˜ 100 meV is observed and a sizeable ratio Δ {{E}\\text{ASOC}}/{{k}\\text{B}}{{T}\\text{c}}˜ 640 could classify the studied compound into the class of noncentrosymmetric superconductors with strong ASOC. The noncentrosymmetry of the crystal structure and the atomic relativistic effects are both responsible for an importance of ASOC in Th7Co3. The calculated results for the density of states show a Van Hove singularity just below E F and dominant role of the 6d electrons of Th to the superconductivity.

  13. Band structure and Fermi surface of electron-doped C60 monolayers.

    PubMed

    Yang, W L; Brouet, V; Zhou, X J; Choi, Hyoung J; Louie, Steven G; Cohen, Marvin L; Kellar, S A; Bogdanov, P V; Lanzara, A; Goldoni, A; Parmigiani, F; Hussain, Z; Shen, Z-X

    2003-04-11

    C60 fullerides are challenging systems because both the electron-phonon and electron-electron interactions are large on the energy scale of the expected narrow band width. We report angle-resolved photoemission data on the band dispersion for an alkali-doped C60 monolayer and a detailed comparison with theory. Compared to the maximum bare theoretical band width of 170 meV, the observed 100-meV dispersion is within the range of renormalization by electron-phonon coupling. This dispersion is only a fraction of the integrated peak width, revealing the importance of many-body effects. Additionally, measurements on the Fermi surface indicate the robustness of the Luttinger theorem even for materials with strong interactions.

  14. Micro-metric electronic patterning of a topological band structure using a photon beam

    PubMed Central

    Frantzeskakis, E.; De Jong, N.; Zwartsenberg, B.; Huang, Y. K.; Bay, T. V.; Pronk, P.; Van Heumen, E.; Wu, D.; Pan, Y.; Radovic, M.; Plumb, N. C.; Xu, N.; Shi, M.; De Visser, A.; Golden, M. S.

    2015-01-01

    In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi2−xSbxTe3−ySey with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi2−xSbxTe3−ySey crystals cleaved in ultrahigh vacuum also exhibits occupied states originating from the bulk conduction band. This is due to adsorbate-induced downward band-bending, a phenomenon known from other Bi-based 3D TIs. Here we show, using angle-resolved photoemission, how an EUV light beam of moderate flux can be used to exclude these topologically trivial states from the Fermi level of Bi1.46Sb0.54Te1.7Se1.3 single crystals, thereby re-establishing the purely topological character of the low lying electronic states of the system. We furthermore prove that this process is highly local in nature in this bulk-insulating TI, and are thus able to imprint structures in the spatial energy landscape at the surface. We illustrate this by ‘writing’ micron-sized letters in the Dirac point energy of the system. PMID:26543011

  15. Quasiparticle self-consistent G W electronic band structure of Cd-IV-N2 compounds

    NASA Astrophysics Data System (ADS)

    Lyu, Sai; Lambrecht, Walter R. L.

    2017-07-01

    Quasiparticle self-consistent G W calculations of the electronic band structures of Cd-IV-N2 with group-IV elements, Si, Ge, and Sn, are reported. The lattice parameters in the P n a 21 crystal structure are obtained both in the local density approximation and generalized gradient approximation (GGA) and provide respectively an underestimate and overestimate of the lattice constants for these until now not synthesized materials. The Wyckoff positions are obtained by structural minimization. At the GGA lattice constant, which is expected to be the most reliable, CdSiN2 is found to have an indirect gap (U -Γ ) of 2.72 eV, which is 0.55 eV lower than the direct gap at Γ of 3.27 eV. In CdGeN2, the indirect gap of 2.01 eV is only 0.1 eV smaller than the direct gap of 2.11 eV, and in CdSnN2 the gap is direct and equals 0.64 eV close to that of InN, as expected. The direct/indirect nature of CdGeN2 is found to be sensitive to shear strain. The conduction band effective masses decrease from CdSiN2 to CdGeN2 to CdSnSn2. The energies of formation indicate these materials to be stable with the possible exception of CdSnN2.

  16. The hybridizations of cobalt 3 d bands with the electron band structure of the graphene/cobalt interface on a tungsten substrate

    NASA Astrophysics Data System (ADS)

    Hwang, Jinwoong; Hwang, Choongyu; Chung, Nak-Kwan; N'Diaye, A. D.; Schmid, A. K.; Denlinger, Jonathan

    2016-08-01

    The interface between graphene and a ferromagnetic substrate has attracted recent research interests due to its potential for spintronic applications. We report an angle-resolved photoemission spectroscopy study on the interface between graphene and cobalt epitaxially grown on a tungsten substrate. We find that the electron band structure of the interface exhibits clear discontinuities at the crossing points with cobalt 3 d bands. These observations indicate strong hybridizations between the electronic states in the interface and provide an important clue to understand the intriguing electromagnetic properties of the graphene/ferromagnet interface.

  17. Electronic band structure trends of perovskite halides: Beyond Pb and Sn to Ge and Si

    NASA Astrophysics Data System (ADS)

    Huang, Ling-yi; Lambrecht, Walter R. L.

    2016-05-01

    The trends in electronic band structure are studied in the cubic A B X3 halide perovskites for A =Cs ; B =Pb , Sn, Ge, Si; and X =I , Br, Cl. The gaps are found to decrease from Pb to Sn and from Ge to Si, but increase from Sn to Ge. The trend is explained in terms of the atom s levels of the group-IV element and the atomic sizes which changes the amount of hybridization with X -p and hence the valence bandwidth. Along the same series spin-orbit coupling also decreases and this tends to increase the gap because of the smaller splitting of the conduction band minimum. Both effects compensate each other to a certain degree. The trend with halogens is to reduce the gap from Cl to I, i.e., with decreasing electronegativity. The role of the tolerance factor in avoiding octahedron rotations and octahedron edge sharing is discussed. The Ge containing compounds have tolerance factor t >1 and hence do not show the series of octahedral rotation distortions and the existence of edge-sharing octahedral phases known for Pb and Sn-based compounds, but rather a rhombohedral distortion. CsGeI3 is found to have a suitable gap for photovoltaics both in its cubic (high-temperature) and rhombohedral (low-temperature) phases. The structural stability of the materials in the different phases is also discussed. We find the rhombohedral phase to have lower total energy and slightly larger gaps but to present a less significant distortion of the band structure than the edge-sharing octahedral phases, such as the yellow phase in CsSnI3. The corresponding silicon based compounds have not yet been synthesized and therefore our estimates are less certain but indicate a small gap for cubic CsSiI3 and CsSiBr3 of about 0.2 ±0.2 eV and 0.8 ±0.6 eV for CsSiCl3. The intrinsic stability of the Si compounds is discussed.

  18. The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting.

    PubMed

    Li, Kexue; Liu, Lei; Yu, Peter Y; Chen, Xiaobo; Shen, D Z

    2016-05-11

    By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

  19. Electronic band structures of AV(2) (A = Ta, Ti, Hf and Nb) Laves phase compounds.

    PubMed

    Charifi, Z; Reshak, Ali Hussain; Baaziz, H

    2009-01-14

    First-principles density functional calculations, using the all-electron full potential linearized augmented plane wave method, have been performed in order to investigate the structural and electronic properties for Laves phase AV(2) (A = Ta, Ti, Hf and Nb) compounds. The generalized gradient approximation and the Engel-Vosko-generalized gradient approximation were used. Our calculations show that these compounds are metallic with more bands cutting the Fermi energy (E(F)) as we move from Nb to Ta, Hf and Ti, consistent with the increase in the values of the density of states at the Fermi level N(E(F)). N(E(F)) is controlled by the overlapping of V-p/d, A-d and A-p states around the Fermi energy. The ground state properties of these compounds, such as equilibrium lattice constant, are calculated and compared with the available literature. There is a strong/weak hybridization between the states, V-s states are strongly hybridized with A-s states below and above E(F). Around the Fermi energy we notice that V-p shows strong hybridization with A-p states.

  20. The angular electronic band structure and free particle model of aromatic molecules: High-frequency photon-induced ring current

    NASA Astrophysics Data System (ADS)

    Öncan, Mehmet; Koç, Fatih; Şahin, Mehmet; Köksal, Koray

    2017-05-01

    This work introduces an analysis of the relationship of first-principles calculations based on DFT method with the results of free particle model for ring-shaped aromatic molecules. However, the main aim of the study is to reveal the angular electronic band structure of the ring-shaped molecules. As in the case of spherical molecules such as fullerene, it is possible to observe a parabolic dispersion of electronic states with the variation of angular quantum number in the planar ring-shaped molecules. This work also discusses the transition probabilities between the occupied and virtual states by analyzing the angular electronic band structure and the possibility of ring currents in the case of spin angular momentum (SAM) or orbital angular momentum (OAM) carrying light. Current study focuses on the benzene molecule to obtain its angular electronic band structure. The obtained electronic band structure can be considered as a useful tool to see the transition probabilities between the electronic states and possible contribution of the states to the ring currents. The photoinduced current due to the transfer of SAM into the benzene molecule has been investigated by using analytical calculations within the frame of time-dependent perturbation theory.

  1. Electronic structure of NaxCu1-xIn5S8 compounds: X-ray photoemission spectroscopy study and band structure calculations

    NASA Astrophysics Data System (ADS)

    Guillot-Deudon, Catherine; Harel, Sylvie; Mokrani, Arezki; Lafond, Alain; Barreau, Nicolas; Fernandez, Vincent; Kessler, John

    2008-12-01

    The aim of the present work is to complete a preliminary study concerning the electronic band structure investigations of NaxCu1-xIn5S8 compounds with 0≤x≤1 , which are expected to be formed at the Cu(In,Ga)Se2/In2S3 interface. The band structure calculations demonstrate that for the compounds containing both Na and Cu, as the Cu content increases the band gap tends to decrease, and x-ray photoemission spectroscopy measurements show that this variation is mainly due to valence-band-maximum shift along the solid solution. The band gap strongly depends on the nature of the monovalent cation, and the band structure calculations demonstrate that the d electrons of copper are responsible for the shift of the valence band. In addition, it is worth noting that the Cu-containing compounds have indirect gaps.

  2. Anisotropic electronic band structure of intrinsic Si(110) studied by angle-resolved photoemission spectroscopy and first-principles calculations

    NASA Astrophysics Data System (ADS)

    Matsushita, Stephane Yu; Takayama, Akari; Kawamoto, Erina; Hu, Chunping; Hagiwara, Satoshi; Watanabe, Kazuyuki; Takahashi, Takashi; Suto, Shozo

    2017-09-01

    We have studied the electronic band structure of the hydrogen-terminated Si(110)-(1 ×1 ) [H:Si(110)-(1 ×1 )] surface using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations in the framework of density functional theory with local density approximation (LDA). The bulk-truncated H:Si(110)-(1 ×1 ) surface is a good template to investigate the electronic band structure of the intrinsic Si(110). In the ARPES spectra, seven bulk states and one surface state due to the H-H interaction are observed clearly. The four bulk states consisting of Si 3 px y orbitals exhibit anisotropic band dispersions along the high symmetric direction of Γ ¯-X ¯ and Γ ¯-X¯' directions, where one state shows one-dimensional character. The calculated band structures show a good agreement with the experimental results except the surface state. We discuss the exact nature of electronic band structures and the applicability of LDA. We have estimated the anisotropic effective masses of electrons and holes of Si(110) for device application.

  3. Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

    SciTech Connect

    Gu, Zhi-Gang; Heinke, Lars Wöll, Christof; Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin; Gordan, Ovidiu D.; Zahn, Dietrich R. T.

    2015-11-02

    The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly “simple” MOF, the excitation spectra cannot be explained by a superposition of “intra-unit” excitations within the individual building blocks. Instead, “inter-unit” excitations also have to be considered.

  4. A class of monolayer metal halogenides MX{sub 2}: Electronic structures and band alignments

    SciTech Connect

    Lu, Feng; Wang, Weichao; Luo, Xiaoguang; Cheng, Yahui; Dong, Hong; Liu, Hui; Wang, Wei-Hua; Xie, Xinjian

    2016-03-28

    With systematic first principles calculations, a class of monolayer metal halogenides MX{sub 2} (M = Mg, Ca, Zn, Cd, Ge, Pb; M = Cl, Br, I) has been proposed. Our study indicates that these monolayer materials are semiconductors with the band gaps ranging from 2.03 eV of ZnI{sub 2} to 6.08 eV of MgCl{sub 2}. Overall, the band gap increases with the increase of the electronegativity of the X atom or the atomic number of the metal M. Meanwhile, the band gaps of monolayer MgX{sub 2} (X = Cl, Br) are direct while those of other monolayers are indirect. Based on the band edge curvatures, the derived electron (m{sub e}) and hole (m{sub h}) effective masses of MX{sub 2} monolayers are close to their corresponding bulk values except that the m{sub e} of CdI{sub 2} is three times larger and the m{sub h} for PbI{sub 2} is twice larger. Finally, the band alignments of all the studied MX{sub 2} monolayers are provided using the vacuum level as energy reference. These theoretical results may not only introduce the monolayer metal halogenides family MX{sub 2} into the emerging two-dimensional materials, but also provide insights into the applications of MX{sub 2} in future electronic, visible and ultraviolet optoelectronic devices.

  5. The origin of electronic band structure anomaly in topological crystalline insulator group-IV tellurides

    NASA Astrophysics Data System (ADS)

    Ye, Zhen-Yu; Deng, Hui-Xiong; Wu, Hui-Zhen; Li, Shu-Shen; Wei, Su-Huai; Luo, Jun-Wei

    2015-11-01

    Group-IV tellurides have exhibited exotic band structures. Specifically, despite the fact that Sn sits between Ge and Pb in the same column of the periodic table, cubic SnTe is a topological crystalline insulator with band inversion, but both isovalent GeTe and PbTe are trivial semiconductors with normal band order. By performing first-principles band structure calculations, we unravel the origin of this abnormal behaviour by using symmetry analysis and the atomic orbital energy levels and atomic sizes of these elements. In group-IV tellurides, the s lone pair band of the group-IV element is allowed by symmetry to couple with the anion valence p band at the L-point, and such s-p coupling leads to the occurrence of bandgap at the L-point. We find that such s-p coupling is so strong in SnTe that it inverts the band order near the bandgap; however, it is not strong enough in both GeTe and PbTe, so they remain normal semiconductors. The reason for this is the incomplete screening of the core of the relatively tight-binding Ge 4s orbital by its 3d orbitals and the large atomic size and strong relativistic effect in Pb, respectively. Interestingly, we also find that the rhombohedral distortion removes the inversion symmetry and the reduced s-p coupling transforms the α-SnTe back to a normal semiconductor. Our study demonstrates that, in addition to spin-orbital coupling, strain and interface dipole fields, inter-orbital coupling is another effective way to engineer the topological insulators.

  6. Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies

    NASA Astrophysics Data System (ADS)

    Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar

    2016-07-01

    The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.

  7. Dynamical and anharmonic effects on the electron-phonon coupling and the zero-point renormalization of the band structure

    NASA Astrophysics Data System (ADS)

    Antonius, Gabriel; Poncé, Samuel; Lantagne-Hurtubise, Étienne; Auclair, Gabriel; Côté, Michel; Gonze, Xavier

    2015-03-01

    The electron-phonon coupling in solids renormalizes the band structure, reducing the band gap by several tenths of an eV in light-atoms semiconductors. Using the Allen-Heine-Cardona theory (AHC), we compute the zero-point renormalization (ZPR) as well as the quasiparticle lifetimes of the full band structure in diamond, BN, LiF and MgO. We show how dynamical effects can be included in the AHC theory, and still allow for the use of a Sternheimer equation to avoid the summation over unoccupied bands. The convergence properties of the electron-phonon coupling self-energy with respect to the Brillouin zone sampling prove to be strongly affected by dynamical effects. We complement our study with a frozen-phonon approach, which reproduces the static AHC theory, but also allows to probe the phonon wavefunctions at finite displacements and include anharmonic effects in the self-energy. We show that these high-order components tend to reduce the strongest electron-phonon coupling elements, which affects significantly the band gap ZPR.

  8. Spectroscopic investigation on the electronic structure of a 5 d band insulator SrHfO3

    NASA Astrophysics Data System (ADS)

    Lee, Yunsang; Seo, Y. K.; Lee, D. J.; Noh, H. J.

    2011-03-01

    We investigated the high-energy electronic structure of a 5d perovskite SrHf O3 . By using optical spectroscopy and O 1 s x-ray absorption spectroscopy, the values of electronic structure parameters are estimated properly. In particular, the crystal field splitting energy, which is closely associated with the p - d hybridization strength, is as high as 5 eV, and the Sr 4 d bands appear to be strongly mixed with the Hf 5 d bands. Moreover, the emission spectra with a 325 nm light excitation exhibit a sizable strength near 500 nm at low temperatures due to oxygen defects. These findings in SrHf O3 are compared with electronic properties of similar compounds, 3 d SrTi O3 and 4 d SrZr O3 .

  9. Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

    SciTech Connect

    Yastrubchak, O. Gluba, L.; Żuk, J.; Wosinski, T. Andrearczyk, T.; Domagala, J. Z.; Sadowski, J.

    2014-01-07

    The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

  10. Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

    NASA Astrophysics Data System (ADS)

    Yastrubchak, O.; Wosinski, T.; Gluba, L.; Andrearczyk, T.; Domagala, J. Z.; Żuk, J.; Sadowski, J.

    2014-01-01

    The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

  11. Unified band-theoretic description of structural, electronic, and magnetic properties of vanadium dioxide phases

    NASA Astrophysics Data System (ADS)

    Xu, Sheng; Shen, Xiao; Hallman, Kent A.; Haglund, Richard F.; Pantelides, Sokrates T.

    2017-03-01

    The debate about whether the insulating phases of vanadium dioxide (V O2 ) can be described by band theory or whether it requires a theory of strong electron correlations remains unresolved even after decades of research. Energy-band calculations using hybrid exchange functionals or including self-energy corrections account for the insulating or metallic nature of different phases but have not yet successfully accounted for the observed magnetic orderings. Strongly correlated theories have had limited quantitative success. Here we report that by using hard pseudopotentials and an optimized hybrid exchange functional, the energy gaps and magnetic orderings of both monoclinic V O2 phases and the metallic nature of the high-temperature rutile phase are consistent with available experimental data, obviating an explicit role for strong correlations. We also identify a potential candidate for the newly found metallic monoclinic phase.

  12. Evidence for a diamondlike electronic band structure of Si multilayers on Ag(111)

    NASA Astrophysics Data System (ADS)

    Mahatha, S. K.; Moras, P.; Sheverdyaeva, P. M.; Flammini, R.; Horn, K.; Carbone, C.

    2015-12-01

    Silicon multilayers on Ag(111) have been suggested to exhibit the structure of silicene, a material that has been heralded as a novel basis for microelectronic applications. However, our angle-resolved photoemission spectra (ARPES) from silicon multilayers on Ag(111) and of the silver-induced reconstruction of Si(111) demonstrate, from the close match in the valence level band structures, that the films exhibit a s p3 diamondlike structure. This refutes the interpretation of silicon multilayers on Ag(111) as silicene, a conclusion that is strengthened by the observation from core level photoemission that significant silver segregation occurs to the surface of these layers.

  13. The influence of heat excitations, vacancies and impurities on the energy electronic band-structure of metallic lithium

    SciTech Connect

    Popov, V.A.

    1999-07-01

    The Korringa-Kohn-Rostoker method with Green's function averaged over the atomic configurations in a complex Ising lattice and a muffin-tin potential was used to calculate the electronic-band structure in lithium containing vacancies and s, p, and d impurities. It is shown that substantial changes in the profile of the Fermi surface do not lead to necking, as was postulated previously, but cause splitting of the electronic states at the face of the Brillouin zone. This is attributed to the reduced symmetry of the crystal lattice with impurity excitation of the electronic-subsystem.

  14. All-electron GW quasiparticle band structures of group 14 nitride compounds

    NASA Astrophysics Data System (ADS)

    Chu, Iek-Heng; Kozhevnikov, Anton; Schulthess, Thomas C.; Cheng, Hai-Ping

    2014-07-01

    We have investigated the group 14 nitrides (M3N4) in the spinel phase (γ-M3N4 with M = C, Si, Ge, and Sn) and β phase (β-M3N4 with M = Si, Ge, and Sn) using density functional theory with the local density approximation and the GW approximation. The Kohn-Sham energies of these systems have been first calculated within the framework of full-potential linearized augmented plane waves (LAPW) and then corrected using single-shot G0W0 calculations, which we have implemented in the modified version of the Elk full-potential LAPW code. Direct band gaps at the Γ point have been found for spinel-type nitrides γ-M3N4 with M = Si, Ge, and Sn. The corresponding GW-corrected band gaps agree with experiment. We have also found that the GW calculations with and without the plasmon-pole approximation give very similar results, even when the system contains semi-core d electrons. These spinel-type nitrides are novel materials for potential optoelectronic applications because of their direct and tunable band gaps.

  15. All-electron GW quasiparticle band structures of group 14 nitride compounds

    SciTech Connect

    Chu, Iek-Heng; Cheng, Hai-Ping; Kozhevnikov, Anton; Schulthess, Thomas C.

    2014-07-28

    We have investigated the group 14 nitrides (M{sub 3}N{sub 4}) in the spinel phase (γ-M{sub 3}N{sub 4} with M = C, Si, Ge, and Sn) and β phase (β-M{sub 3}N{sub 4} with M = Si, Ge, and Sn) using density functional theory with the local density approximation and the GW approximation. The Kohn-Sham energies of these systems have been first calculated within the framework of full-potential linearized augmented plane waves (LAPW) and then corrected using single-shot G{sub 0}W{sub 0} calculations, which we have implemented in the modified version of the Elk full-potential LAPW code. Direct band gaps at the Γ point have been found for spinel-type nitrides γ-M{sub 3}N{sub 4} with M = Si, Ge, and Sn. The corresponding GW-corrected band gaps agree with experiment. We have also found that the GW calculations with and without the plasmon-pole approximation give very similar results, even when the system contains semi-core d electrons. These spinel-type nitrides are novel materials for potential optoelectronic applications because of their direct and tunable band gaps.

  16. Electronic band structure for occupied and unoccupied states of the natural topological superlattice phase Sb2Te

    NASA Astrophysics Data System (ADS)

    Khalil, L.; Papalazarou, E.; Caputo, M.; Nilforoushan, N.; Perfetti, L.; Taleb-Ibrahimi, A.; Kandyba, V.; Barinov, A.; Gibson, Q. D.; Cava, R. J.; Marsi, M.

    2017-02-01

    We present an experimental study describing the effects of surface termination on the electronic structure of the natural topological superlattice phase Sb2Te . Using scanning angle-resolved photoemission microscopy, we consistently find various nonequivalent regions on the same surface after cleaving various Sb2Te single crystals. We were able to identify three distinct terminations characterized by different Sb/Te surface stoichiometric ratios and with clear differences in their band structure. For the dominating Te-rich termination, we also provide a direct observation of the excited electronic states and of their relaxation dynamics by means of time-resolved angle-resolved photoemission spectroscopy. Our results clearly indicate that the surface electronic structure is strongly affected by the bulk properties of the superlattice.

  17. Effect of intercalated lithium on the electronic band structure of indium selenide

    NASA Astrophysics Data System (ADS)

    1990-08-01

    The purpose of the project on Superionics supported by DARPA Contract No. N00014-88-K-0392 is to develop a physical understanding of the elements of a solid state battery consisting of a lithium anode, a lithium-doped borate glass separator and a lithium-intercalated InSe cathode. In this report a theoretical analysis based on a tight-binding model is presented for the electronic structure of both pure and lithium-intercalated InSe. An understanding of the electronic structure is necessary for an understanding of the electrical conductivity due to both electronic motion and lithium-ion motion. The conductivity is an important parameter for the performance of the solid state battery.

  18. Electronic structure of metal hydrides. VI. Photoemission studies and band theory of VH, NbH, and TaH

    SciTech Connect

    Peterman, D.J.; Misemer, D.K.; Weaver, J.H.; Peterson, D.T.

    1983-01-15

    The electronic structures of VH/sub x/, NbH/sub x/, and TaH/sub x/ (0.6< or =x< or =1.0) have been studied with the use of photoemission spectroscopy with synchrotron radiation (10< or =h..nu..< or =100 eV). Two hydrogen-derived features are observed at approx.5.5- and 7.5-eV binding energies, and the metal d bands are shown to be modified by the hydrogen interaction. These results show no agreement with rigid-band models based on the density of states of the pure metals and relatively poor agreement with previous band-structure calculations for monohydrides. We have calculated the energy bands of ..gamma..-phase NbH (self-consistently) and of NbH/sub 0/ and NbH/sub 2/ (non-self-consistently). Together, the calculations and experiments show how the metal-hydrogen interaction alters the electronic properties of the bcc metals.

  19. Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Zhang, Chenxi; Gong, Cheng; Nie, Yifan; Min, Kyung-Ah; Liang, Chaoping; Oh, Young Jun; Zhang, Hengji; Wang, Weihua; Hong, Suklyun; Colombo, Luigi; Wallace, Robert M.; Cho, Kyeongjae

    2017-03-01

    Two-dimensional transition metal dichalcogenides (TMDs) are promising low-dimensional materials which can produce diverse electronic properties and band alignment in van der Waals heterostructures. Systematic density functional theory (DFT) calculations are performed for 24 different TMD monolayers and their bilayer heterostacks. DFT calculations show that monolayer TMDs can behave as semiconducting, metallic or semimetallic depending on their structures; we also calculated the band alignment of the TMDs to predict their alignment in van der Waals heterostacks. We have applied the charge equilibration model (CEM) to obtain a quantitative formula predicting the highest occupied state of any type of bilayer TMD heterostacks (552 pairs for 24 TMDs). The CEM predicted values agree quite well with the selected DFT simulation results. The quantitative prediction of the band alignment in the TMD heterostructures can provide an insightful guidance to the development of TMD-based devices.

  20. Observations of Multi-band Structures in Double Star TC-1 PEACE Electron and HIA Ion Data

    NASA Astrophysics Data System (ADS)

    Mohan Narasimhan, K.; Fazakerley, A. N.; Grimald, S.; Dandouras, I. S.; Mihaljcic, B.; Kistler, L. M.; Owen, C. J.

    2015-12-01

    Several authors have reported inner magnetosphere observations of proton distributions confined to narrow energy bands in the range 1 - 25 keV (Smith and Hoffman (1974), etc). These structures have been described as "nose structures", with reference to their appearance in energy-time spectrograms and are also known as "bands" if they occur for extended periods of time. Multi-nose structures have been observed if 2 or more noses appear at the same time (Vallat et al., 2007). Gaps between "noses" (or "bands") have been explained in terms of the competing corotation, convection and magnetic gradient drifts. Charge exchange losses in slow drift paths for steady state scenarios and the role of substorm injections have also been considered (Li et al., 2000; Ebihara et al., 2004). We analyse observations of electron and ion multi-band structures frequently seen in Double-Star TC1 PEACE and HIA data. We present results from statistical surveys conducted using data from the duration of the mission. Furthermore, using a combination of both statistics and simulations, we test previous theories as to possible formation mechanisms and explore other possible explanations.

  1. 2D Tl-Pb compounds on Ge(1 1 1) surface: atomic arrangement and electronic band structure.

    PubMed

    Gruznev, D V; Bondarenko, L V; Tupchaya, A Y; Eremeev, S V; Mihalyuk, A N; Chou, J P; Wei, C M; Zotov, A V; Saranin, A A

    2017-01-25

    Structural transformations and evolution of the electron band structure in the (Tl, Pb)/Ge(1 1 1) system have been studied using low-energy electron diffraction, scanning tunneling microscopy, angle-resolved photoelectron spectroscopy and density functional theory calculations. The two 2D Tl-Pb compounds on Ge(1 1 1), [Formula: see text]-(Tl, Pb) and [Formula: see text]-(Tl, Pb), have been found and their composition, atomic arrangement and electron properties has been characterized. The (Tl, Pb)/Ge(1 1 1)[Formula: see text] compound is almost identical to the alike (Tl, Pb)/Si(1 1 1)[Formula: see text] system from the viewpoint of its atomic structure and electronic properties. They contain 1.0 ML of Tl atoms arranged into a honeycomb network of chained trimers and 1/3 ML of Pb atoms occupying the centers of the honeycomb units. The (Tl, Pb)/Ge(1 1 1)[Formula: see text] compound contains six Tl atoms and seven Pb atoms per [Formula: see text] unit cell (i.e.  ∼0.67 ML Tl and  ∼0.78 ML Pb). Its atomic structure can be visualized as consisting of Pb hexagons surrounded by Tl trimers. The (Tl, Pb)/Ge(1 1 1)[Formula: see text] and (Tl, Pb)/Ge(1 1 1)[Formula: see text] compounds are metallic and their band structures contain spin-split surface-state bands. By analogy with the (Tl, Pb)/Si(1 1 1)[Formula: see text], these (Tl, Pb)/Ge(1 1 1) compounds are believed to be promising objects for prospective studies of superconductivity in one-atom-layer systems.

  2. 2D Tl-Pb compounds on Ge(1 1 1) surface: atomic arrangement and electronic band structure

    NASA Astrophysics Data System (ADS)

    Gruznev, D. V.; Bondarenko, L. V.; Tupchaya, A. Y.; Eremeev, S. V.; Mihalyuk, A. N.; Chou, J. P.; Wei, C. M.; Zotov, A. V.; Saranin, A. A.

    2017-01-01

    Structural transformations and evolution of the electron band structure in the (Tl, Pb)/Ge(1 1 1) system have been studied using low-energy electron diffraction, scanning tunneling microscopy, angle-resolved photoelectron spectroscopy and density functional theory calculations. The two 2D Tl-Pb compounds on Ge(1 1 1), \\sqrt{3}× \\sqrt{3} -(Tl, Pb) and 3× 3 -(Tl, Pb), have been found and their composition, atomic arrangement and electron properties has been characterized. The (Tl, Pb)/Ge(1 1 1)\\sqrt{3}× \\sqrt{3} compound is almost identical to the alike (Tl, Pb)/Si(1 1 1)\\sqrt{3}× \\sqrt{3} system from the viewpoint of its atomic structure and electronic properties. They contain 1.0 ML of Tl atoms arranged into a honeycomb network of chained trimers and 1/3 ML of Pb atoms occupying the centers of the honeycomb units. The (Tl, Pb)/Ge(1 1 1)3× 3 compound contains six Tl atoms and seven Pb atoms per 3× 3 unit cell (i.e.  ˜0.67 ML Tl and  ˜0.78 ML Pb). Its atomic structure can be visualized as consisting of Pb hexagons surrounded by Tl trimers. The (Tl, Pb)/Ge(1 1 1)\\sqrt{3}× \\sqrt{3} and (Tl, Pb)/Ge(1 1 1)3× 3 compounds are metallic and their band structures contain spin-split surface-state bands. By analogy with the (Tl, Pb)/Si(1 1 1)\\sqrt{3}× \\sqrt{3} , these (Tl, Pb)/Ge(1 1 1) compounds are believed to be promising objects for prospective studies of superconductivity in one-atom-layer systems.

  3. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

    SciTech Connect

    Gladysiewicz, M.; Wartak, M. S.; Kudrawiec, R.

    2015-08-07

    The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.

  4. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

    NASA Astrophysics Data System (ADS)

    Gladysiewicz, M.; Kudrawiec, R.; Wartak, M. S.

    2015-08-01

    The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 1018 cm-3, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ɛ = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga0.47In0.53As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.

  5. Electron transport and Goos-Hänchen shift in graphene with electric and magnetic barriers: optical analogy and band structure

    NASA Astrophysics Data System (ADS)

    Sharma, Manish; Ghosh, Sankalpa

    2011-02-01

    Transport of massless Dirac fermions in graphene monolayers is analysed in the presence of a combination of singular magnetic barriers and applied electrostatic potential. Extending a recently proposed (Ghosh and Sharma 2009 J. Phys.: Condens. Matter 21 292204) analogy between the transmission of light through a medium with modulated refractive index and electron transmission in graphene through singular magnetic barriers to the present case, we find the addition of a scalar potential profoundly changes the transmission. We calculate the quantum version of the Goos-Hänchen shift that the electron wave suffers upon being totally reflected by such barriers. The combined electric and magnetic barriers substantially modify the band structure near the Dirac point. This affects transport near the Dirac point significantly and has important consequences for graphene-based electronics.

  6. Electron transport and Goos-Hänchen shift in graphene with electric and magnetic barriers: optical analogy and band structure.

    PubMed

    Sharma, Manish; Ghosh, Sankalpa

    2011-02-09

    Transport of massless Dirac fermions in graphene monolayers is analysed in the presence of a combination of singular magnetic barriers and applied electrostatic potential. Extending a recently proposed (Ghosh and Sharma 2009 J. Phys.: Condens. Matter 21 292204) analogy between the transmission of light through a medium with modulated refractive index and electron transmission in graphene through singular magnetic barriers to the present case, we find the addition of a scalar potential profoundly changes the transmission. We calculate the quantum version of the Goos-Hänchen shift that the electron wave suffers upon being totally reflected by such barriers. The combined electric and magnetic barriers substantially modify the band structure near the Dirac point. This affects transport near the Dirac point significantly and has important consequences for graphene-based electronics.

  7. Coherent Optical Control of Electronic Excitations in Wide-Band-Gap Semiconductor Structures

    DTIC Science & Technology

    2015-05-01

    ABSTRACT The main objective of this research is to study coherent quantum effects , such as Rabi oscillations in optical spectra of wide- band-gap...DRI) Research Objectives 1 2. Temperature Effects in the Kinetics of Photoexcited Carriers in Wide- Band-Gap Semiconductors 2 2.1 Theoretical...3 Fig. 2 Calculated polar optical scattering rate for the nonparabolic conduction band in GaN including the screening effect

  8. Electronic structure of reconstructed InAs(001) surfaces - identification of bulk and surface bands based on their symmetries

    NASA Astrophysics Data System (ADS)

    Olszowska, Natalia; Kolodziej, Jacek J.

    2016-02-01

    Using angle-resolved photoelectron spectroscopy (ARPES) band structures of indium- and arsenic-terminated InAs(001) surfaces are investigated. These surfaces are highly reconstructed, elementary cells of their lattices contain many atoms in different chemical configurations, and moreover, they are composed of domains having related but different reconstructions. These domain-type surface reconstructions result in the reciprocal spaces containing regions with well-defined k→∥-vector and regions with not-well-defined one. In the ARPES spectra most of the surface related features appear as straight lines in the indeterminate k→∥-vector space. It is shown that, thanks to differences in crystal and surface symmetries, the single photon energy ARPES may be successfully used for classification of surface and bulk bands of electronic states on complex, highly reconstructed surfaces instead of the most often used variable photon energy studies.

  9. Atomic and electronic structures evolution of the narrow band gap semiconductor Ag2Se under high pressure.

    PubMed

    Naumov, P; Barkalov, O; Mirhosseini, H; Felser, C; Medvedev, S A

    2016-09-28

    Non-trivial electronic properties of silver telluride and other chalcogenides, such as the presence of a topological insulator state, electronic topological transitions, metallization, and the possible emergence of superconductivity under pressure have attracted attention in recent years. In this work, we studied the electronic properties of silver selenide (Ag2Se). We performed direct current electrical resistivity measurements, in situ Raman spectroscopy, and synchrotron x-ray diffraction accompanied by ab initio calculations to explore pressure-induced changes to the atomic and electronic structure of Ag2Se. The temperature dependence of the electrical resistivity was measured up to 30 GPa in the 4-300 K temperature interval. Resistivity data showed an unusual increase in the thermal energy gap of phase I, which is a semiconductor under ambient conditions. Recently, a similar effect was reported for the 3D topological insulator Bi2Se3. Raman spectroscopy studies revealed lattice instability in phase I indicated by the softening of observed vibrational modes with pressure. Our hybrid functional band structure calculations predicted that phase I of Ag2Se would be a narrow band gap semiconductor, in accordance with experimental results. At a pressure of ~7.5 GPa, Ag2Se underwent a structural transition to phase II with an orthorhombic Pnma structure. The temperature dependence of the resistivity of Ag2Se phase II demonstrated its metallic character. Ag2Se phase III, which is stable above 16.5 GPa, is also metallic according to the resistivity data. No indication of the superconducting transition is found above 4 K in the studied pressure range.

  10. Atomic and electronic structures evolution of the narrow band gap semiconductor Ag2Se under high pressure

    NASA Astrophysics Data System (ADS)

    Naumov, P.; Barkalov, O.; Mirhosseini, H.; Felser, C.; Medvedev, S. A.

    2016-09-01

    Non-trivial electronic properties of silver telluride and other chalcogenides, such as the presence of a topological insulator state, electronic topological transitions, metallization, and the possible emergence of superconductivity under pressure have attracted attention in recent years. In this work, we studied the electronic properties of silver selenide (Ag2Se). We performed direct current electrical resistivity measurements, in situ Raman spectroscopy, and synchrotron x-ray diffraction accompanied by ab initio calculations to explore pressure-induced changes to the atomic and electronic structure of Ag2Se. The temperature dependence of the electrical resistivity was measured up to 30 GPa in the 4-300 K temperature interval. Resistivity data showed an unusual increase in the thermal energy gap of phase I, which is a semiconductor under ambient conditions. Recently, a similar effect was reported for the 3D topological insulator Bi2Se3. Raman spectroscopy studies revealed lattice instability in phase I indicated by the softening of observed vibrational modes with pressure. Our hybrid functional band structure calculations predicted that phase I of Ag2Se would be a narrow band gap semiconductor, in accordance with experimental results. At a pressure of ~7.5 GPa, Ag2Se underwent a structural transition to phase II with an orthorhombic Pnma structure. The temperature dependence of the resistivity of Ag2Se phase II demonstrated its metallic character. Ag2Se phase III, which is stable above 16.5 GPa, is also metallic according to the resistivity data. No indication of the superconducting transition is found above 4 K in the studied pressure range.

  11. Band Structures of Plasmonic Polarons

    NASA Astrophysics Data System (ADS)

    Caruso, Fabio; Lambert, Henry; Giustino, Feliciano

    2015-03-01

    In angle-resolved photoemission spectroscopy (ARPES), the acceleration of a photo-electron upon photon absorption may trigger shake-up excitations in the sample, leading to the emission of phonons, electron-hole pairs, and plasmons, the latter being collective charge-density fluctuations. Using state-of-the-art many-body calculations based on the `GW plus cumulant' approach, we show that electron-plasmon interactions induce plasmonic polaron bands in group IV transition metal dichalcogenide monolayers (MoS2, MoSe2, WS2, WSe2). We find that the energy vs. momentum dispersion relations of these plasmonic structures closely follow the standard valence bands, although they appear broadened and blueshifted by the plasmon energy. Based on our results we identify general criteria for observing plasmonic polaron bands in the angle-resolved photoelectron spectra of solids.

  12. Photonic band structure

    SciTech Connect

    Yablonovitch, E.

    1993-05-01

    We learned how to create 3-dimensionally periodic dielectric structures which are to photon waves, as semiconductor crystals are to electron waves. That is, these photonic crystals have a photonic bandgap, a band of frequencies in which electromagnetic waves are forbidden, irrespective of propagation direction in space. Photonic bandgaps provide for spontaneous emission inhibition and allow for a new class of electromagnetic micro-cavities. If the perfect 3-dimensional periodicity is broken by a local defect, then local electromagnetic modes can occur within the forbidden bandgap. The addition of extra dielectric material locally, inside the photonic crystal, produces {open_quotes}donor{close_quotes} modes. Conversely, the local removal of dielectric material from the photonic crystal produces {open_quotes}acceptor{close_quotes} modes. Therefore, it will now be possible to make high-Q electromagnetic cavities of volume {approx_lt}1 cubic wavelength, for short wavelengths at which metallic cavities are useless. These new dielectric micro-resonators can cover the range all the way from millimeter waves, down to ultraviolet wavelengths.

  13. Effect of spin-orbit interaction on the electronic structure of indium-antimonide d bands

    SciTech Connect

    Sobolev, V. V. Perevoshchikov, D. A.

    2015-05-15

    The bands and densities of states of d bands in indium antimonide (InSb) are determined taking into account and disregarding the spin-orbit interaction. It is established that taking into account the effect of spin-orbit interaction results also in a substantial change in the dispersion of the obtained bands instead of only in the doublet splitting of the band of core d levels at ∼(0.79–0.86) eV. It is established that it is indium 4d states with e{sub g} and t{sub 2g} symmetry that give the main contribution to the density of states. The calculations are carried out by the LAPW method with the exchange-correlation potential in the generalized gradient approximation (LAPW + GGA)

  14. Effect of Sr doping on the electronic band structure and optical properties of ZnO: A first principle calculation

    NASA Astrophysics Data System (ADS)

    Mahmood, Asad; Tezcan, Fatih; Kardaş, Gülfeza; Karadaǧ, Faruk

    2017-09-01

    Incorporating impurities in ZnO provide opportunities to manipulate its electronic and optical properties, which can be exploited for optoelectronic device applications. Among various elements doped in ZnO crystal structure, limited attempts have been accounted for the Sr-doped ZnO system. Further, no theoretical evidence has been reported so far to explore the Sr-doped ZnO frameworks. Here, we report first principle study for the pure and Sr-doped ZnO (Zn1-xSrxO) structure. We employed the Perdew-Burke-Ernzerhof exchange-correlation function parameters in generalized gradient approximations. In light of these estimations, we calculated the electronic band gap, density of states, and optical parameters, for example, absorption, dielectric functions, reflectivity, refractive index, and energy-loss. The studies suggested that Sr incorporation expanded the optical band gap of ZnO. In addition, the energy-loss significantly increased with Sr content which might be associated with an increase in the degree of disorder in the crystal lattice with Sr incorporation. Also, significant changes were seen in the optical properties of ZnO with Sr content in the low energy region. The theoretical results were likewise compared with the previously reported experimental data.

  15. Micro-metric electronic patterning of a topological band structure using a photon beam

    NASA Astrophysics Data System (ADS)

    Golden, Mark; Frantzeskakis, Emmanouil; de Jong, Nick; Huang, Yingkai; Wu, Dong; Pan, Yu; de Visser, Anne; van Heumen, Erik; van Bay, Tran; Zwartsenberg, Berend; Pronk, Pieter; Varier Ramankutty, Shyama; Tytarenko, Alona; Xu, Nan; Plumb, Nick; Shi, Ming; Radovic, Milan; Varkhalov, Andrei

    2015-03-01

    The only states crossing EF in ideal, 3D TIs are topological surface states. Single crystals of Bi2Se3andBi2Te3 are too defective to exhibit bulk-insulating behaviour, and ARPES shows topologically trivial 2DEGs at EF in the surface region due to downward band bending. Ternary & quaternary alloys of Bi /Te /Se /Sb hold promise for obtaining bulk-insulating crystals. Here we report ARPES data from quaternary, bulk-insulating, Bi-based TIs. Shortly after cleavage in UHV, downward band bending pulls the bulk conduction band below EF, once again frustrating the ``topological only'' ambition for the Fermi surface. However, there is light at the end of the tunnel: we show that a super-band-gap photon beam generates a surface photovoltage sufficient to flatten the bands, thereby recovering the ideal, ``topological only'' situation. In our bulk-insulating quaternary TIs, this effect is local in nature, and permits the writing of arbitrary, micron-sized patterns in the topological energy landscape at the surface. Support from FOM, NWO and the EU is gratefully acknowledged.

  16. Spin- and valley-dependent electronic band structure and electronic heat capacity of ferromagnetic silicene in the presence of strain, exchange field and Rashba spin-orbit coupling

    NASA Astrophysics Data System (ADS)

    Hoi, Bui Dinh; Yarmohammadi, Mohsen; Kazzaz, Houshang Araghi

    2017-10-01

    We studied how the strain, induced exchange field and extrinsic Rashba spin-orbit coupling (RSOC) enhance the electronic band structure (EBS) and electronic heat capacity (EHC) of ferromagnetic silicene in presence of external electric field (EF) by using the Kane-Mele Hamiltonian, Dirac cone approximation and the Green's function approach. Particular attention is paid to investigate the EHC of spin-up and spin-down bands at Dirac K and K‧ points. We have varied the EF, strain, exchange field and RSOC to tune the energy of inter-band transitions and consequently EHC, leading to very promising features for future applications. Evaluation of EF exhibits three phases: Topological insulator (TI), valley-spin polarized metal (VSPM) and band insulator (BI) at given aforementioned parameters. As a new finding, we have found a quantum anomalous Hall phase in BI regime at strong RSOCs. Interestingly, the effective mass of carriers changes with strain, resulting in EHC behaviors. Here, exchange field has the same behavior with EF. Finally, we have confirmed the reported and expected symmetry results for both Dirac points and spins with the study of valley-dependent EHC.

  17. Electronic structure of the surface unoccupied band of Ge(001)-c (4 ×2 ) : Direct imaging of surface electron relaxation pathways

    NASA Astrophysics Data System (ADS)

    Kanasaki, J.; Yamamoto, I.; Azuma, J.; Fukatsu, S.

    2017-09-01

    We have studied the electronic structure of the surface unoccupied band (SUB) of clean Ge(001)-c (4 ×2 ) , with high energy and momentum resolution, by means of time- and angle-resolved two-photon photoelectron spectroscopy. The time evolution of photoelectron intensity images, measured as functions of energy and emission angle after photoexcitation with laser pulses (1.5 eV, 200 fs), provides a momentum space view of the relaxation pathways of surface excited electrons toward the bottom of the SUB. Surface excited electrons relax in several picoseconds along the strongly dispersive directions (Γ ¯J'¯ and Γ ¯J2 '¯ ) and then accumulate near the band bottom. Taking into account the ultrafast change of surface potential, possibly due to the spatial redistribution of nonthermal carriers generated by photoexcitation, an energy width of 0.22 eV was determined as the surface band gap, as well as the surface dispersion properties along three high-symmetry directions.

  18. Electronic band structure of zinc blende CdSe and rock salt PbSe semiconductors with silicene-type honeycomb geometry

    NASA Astrophysics Data System (ADS)

    Delerue, Christophe; Vanmaekelbergh, D.

    2015-09-01

    We report on the electronic band structure of 2D CdSe and PbSe semiconductors that have a silicene-type honeycomb geometry. Atomistic tight-binding calculations are performed on several model systems that bear a strong resemblance to the silicene-type honeycomb structures that were recently obtained by nanocrystal self-assembly. The calculated band structures are compared both to those of 2D quantum wells and graphene-type honeycomb structures. It is found that in silicene type CdSe honeycomb structures, the lowest electron conduction bands (derived from S-type nanocrystal wave functions) form a Dirac-type dispersion, very similar as in graphene. The P-type bands are usually more complex. However, when the hybridization between S- and P-type bands increases, a second Dirac cone and a genuine non-trivial flat band is observed, similar as in the case of graphene-type honeycomb structures of CdSe. There is a strong non-trivial gap between the first and second valence band, hosting the quantum spin Hall effect. Silicene-type PbSe structures show Dirac features in their bands, which however can be clouded due to the multi-valley character of PbSe.

  19. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Suppression of Anti-resonant Effect in Presence of Band Overlap

    NASA Astrophysics Data System (ADS)

    Xiong, Gang

    2010-07-01

    By exact resolution of coupled ideal chains connecting an extra side site, we show that the so-called "anti-resonant effect" is suppressed when the electron energy is inside the overlap region of extended bands of the ideal tight-binding chains. When the electronic energy is outside the band overlap region, the existence of "anti-resonant effect" is tuned by details of local connectivity around the extra side site and can be suppressed by introduction of magnetic flux.

  20. Electronic structure of the conduction band upon the formation of ultrathin fullerene films on the germanium oxide surface

    NASA Astrophysics Data System (ADS)

    Komolov, A. S.; Lazneva, E. F.; Gerasimova, N. B.; Panina, Yu. A.; Baramygin, A. V.; Zashikhin, G. D.

    2016-06-01

    The results of the investigation of the electronic structure of the conduction band in the energy range 5-25 eV above the Fermi level E F and the interfacial potential barrier upon deposition of aziridinylphenylpyrrolofullerene (APP-C60) and fullerene (C60) films on the surface of the real germanium oxide ((GeO2)Ge) have been presented. The content of the oxide on the (GeO2)Ge surface has been determined using X-ray photoelectron spectroscopy. The electronic properties have been measured using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode. The regularities of the change in the fine structure of total current spectra (FSTCS) with an increase in the thickness of the APP-C60 and C60 coatings to 7 nm have been investigated. A comparison of the structures of the FSTCS maxima for the C60 and APP-C60 films has made it possible to reveal the energy range (6-10 eV above the Fermi level E F) in which the energy states are determined by both the π* and σ* states and the FSTCS spectra have different structures of the maxima for the APP-C60 and unsubstituted C60 films. The formation of the interfacial potential barrier upon deposition of APP-C60 and C60 on the (GeO2)Ge surface is accompanied by an increase in the work function of the surface E vac- E F by the value of 0.2-0.3 eV, which corresponds to the transfer of the electron density from the substrate to the organic films under investigation. The largest changes occur with an increase in the coating thickness to 3 nm, and with further deposition of APP-C60 and C60, the work function of the surface changes only slightly.

  1. Effect of electron correlations on the Fe3Si and α -FeSi2 band structure and optical properties

    NASA Astrophysics Data System (ADS)

    Sandalov, Igor; Zamkova, Natalia; Zhandun, Vyacheslav; Tarasov, Ivan; Varnakov, Sergey; Yakovlev, Ivan; Solovyov, Leonid; Ovchinnikov, Sergey

    2015-11-01

    We use the Vienna ab initio simulation package (vasp) for evaluation of the quasiparticle spectra and their spectral weights within Hedin's GW approximation (GWA) for Fe3Si and α -FeSi2 within the non-self-consistent one-shot approximation G0W0 and self-consistent scGWA with the vertex corrections in the particle-hole channel, taken in the form of two-point kernel. As input for G0W0 , the band structure and wave functions evaluated within the generalized gradient corrected local-density approximation to density functional theory (GGA) have been used. The spectral weights of quasiparticles in these compounds deviate from unity everywhere and show nonmonotonic behavior in those parts of bands where the delocalized states contribute to their formation. The G0W0 and scGWA spectral weights are the same within 2%-5%. The scGWA shows a general tendency to return G0W0 bands to their GGA positions for the delocalized states, while in the flat bands it flattens even more. Variable angle spectroscopic ellipsometry measurements at T =296 K on grown single-crystalline ˜50 -nm-thick films of Fe3Si on n -Si(111) wafer have been performed in the interval of energies ω ˜(1.3 -5 ) eV. The comparison of G0W0 and scGW theory with experimental real and imaginary parts of permittivity, refractive index, extinction and absorption coefficients, reflectivity, and electron energy loss function shows that both G0W0 and scGW qualitatively describe experiment correctly, the position of the low-energy peaks is described better by the scGW theory, however, its detailed structure is not observed in the experimental curves. We suggest that the angle-resolved photoemission spectroscopy experiments, which can reveal the fine details of the quasiparticle band structure and spectral weights, could help to understand (i) if the scGWA with this type of vertex correction is sufficiently good for description of these iron silicides and, possibly, (ii) why some features of calculated permittivity are

  2. Quasiparticle self-consistent GW study of cuprates: electronic structure, model parameters, and the two-band theory for Tc

    PubMed Central

    Jang, Seung Woo; Kotani, Takao; Kino, Hiori; Kuroki, Kazuhiko; Han, Myung Joon

    2015-01-01

    Despite decades of progress, an understanding of unconventional superconductivity still remains elusive. An important open question is about the material dependence of the superconducting properties. Using the quasiparticle self-consistent GW method, we re-examine the electronic structure of copper oxide high-Tc materials. We show that QSGW captures several important features, distinctive from the conventional LDA results. The energy level splitting between and is significantly enlarged and the van Hove singularity point is lowered. The calculated results compare better than LDA with recent experimental results from resonant inelastic xray scattering and angle resolved photoemission experiments. This agreement with the experiments supports the previously suggested two-band theory for the material dependence of the superconducting transition temperature, Tc. PMID:26206417

  3. Structural vs electronic origin of renormalized band widths in TTF-TCNQ: An angular dependent NEXAFS study

    NASA Astrophysics Data System (ADS)

    Sing, M.; Meyer, J.; Hoinkis, M.; Glawion, S.; Blaha, P.; Gavrila, G.; Jacobsen, C. S.; Claessen, R.

    2007-12-01

    We have performed angle-dependent near-edge x-ray absorption fine structure measurements in the Auger electron yield mode on the correlated quasi-one-dimensional organic conductor tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) in order to determine the orientation of the molecules in the topmost surface layer. We find that the tilt angles of the molecules with respect to the one-dimensional axis are essentially the same as in the bulk. Thus, we can rule out surface relaxation as the origin of the renormalized band widths which were inferred from the analysis of photoemission data within the one-dimensional Hubbard model. Thereby, recent theoretical results are corroborated which invoke long-range Coulomb repulsion as alternative explanation to understand the spectral dispersions of TTF-TCNQ quantitatively within an extended Hubbard model.

  4. 5f band dispersion in the highly correlated electronic structure of uranium compounds

    NASA Astrophysics Data System (ADS)

    Moore, D. P.; Joyce, J. J.; Arko, A. J.; Morales, L.; Sarrao, J.

    2000-07-01

    Despite the fact that the 5f shell of the light actinides is less than half filled, the relatively short radial extent of 5f-electron wave functions yields at most minimal f-f overlap (the critical actinide-actinide spacing for which f-f overlap is no longer viable was first quantified by H. Hill and found to be 3.4 Å. The spacing for both USb2 and UAsSe is about 4.5. Å) and results in a myriad of phenomena collectively called correlated electron behavior. We present data from angle resolved photoemission studies of USb2 and UAsSe on correlated electron behavior.

  5. Electronic band structure and specific features of Sm2NiMnO6 compound: DFT calculation

    NASA Astrophysics Data System (ADS)

    Reshak, A. H.; Azam, Sikander

    2013-09-01

    The band structure, density of states, electronic charge density, Fermi surface and optical properties of Sm2NiMnO6 compound have been investigated with the support of density functional theory (DFT). The atomic positions of Sm2NiMnO6 compound were optimized by minimizing the forces acting on the atoms, using the full potential linear augmented plane wave method. We employed the local density approximation (LDA), generalized gradient approximation (GGA) and Engel-Vosko GGA (EVGGA) to treat the exchange correlation potential by solving Kohn-Sham equations. The calculation shows that the compound is metallic with strong hybridization near the Fermi energy level (EF). The calculated density of states at the EF is about 21.60, 24.52 and 26.21 states/eV, and the bare linear low-temperature electronic specific heat coefficient (γ) is found to be 3.74, 4.25 and 4.54 mJ/mol K2 for EVGGA, GGA and LDA, respectively. The Fermi surface is composed of two sheets. The bonding features of the compounds are analyzed using the electronic charge density in the (011) crystallographic plane. The dispersion of the optical constants was calculated and discussed.

  6. Hybridization of electronic band structure and enhancement of thermoelectric properties of ZnSb thin film by In doping

    NASA Astrophysics Data System (ADS)

    Zheng, Zhuang-hao; Fan, Ping; Luo, Jing-ting; Liang, Guang-xing

    2017-04-01

    Here we report the In doped ZnSb thermoelectric thin films which were deposited by direct current magnetron co-sputtering with prefabricate layer doping method. The X-ray diffraction result indicates that the peaks of the In doped ZnSb thin films are related to ZnSb phase and are slightly shifted to smaller angle. The calculations of In occupy one of the Sb or Zn location in normal site were performed based on the first-principles and it has lower total energy when the In substitutes the Zn. The thermo-electrical testing experimental results indicate that the Seebeck coefficient increases greatly after In doped due to increase of the total density of states and the complicate of the electronic band structure. The Fermi surface moves to the valence band after In doped that will reduce the electrical conductivity and it corresponds to the testing result. It can be observed that the power factor of the In doped ZnSb is approach two times than that of the thin film without doping.

  7. Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO3 (A=Ca, Sr, and Ba) and SrTiO3

    PubMed Central

    Baniecki, John D.; Yamazaki, Takashi; Ricinschi, Dan; Van Overmeere, Quentin; Aso, Hiroyuki; Miyata, Yusuke; Yamada, Hiroaki; Fujimura, Norifumi; Maran, Ronald; Anazawa, Toshihisa; Valanoor, Nagarajan; Imanaka, Yoshihiko

    2017-01-01

    The valence band (VB) electronic structure and VB alignments at heterointerfaces of strained epitaxial stannate ASnO3 (A=Ca, Sr, and Ba) thin films are characterized using in situ X-ray and ultraviolet photoelectron spectroscopies, with band gaps evaluated using spectroscopic ellipsometry. Scanning transmission electron microscopy with geometric phase analysis is used to resolve strain at atomic resolution. The VB electronic structure is strain state dependent in a manner that correlated with a directional change in Sn-O bond lengths with strain. However, VB offsets are found not to vary significantly with strain, which resulted in ascribing most of the difference in band alignment, due to a change in the band gaps with strain, to the conduction band edge. Our results reveal significant strain tuning of conduction band offsets using epitaxial buffer layers, with strain-induced offset differences as large as 0.6 eV possible for SrSnO3. Such large conduction band offset tunability through elastic strain control may provide a pathway to minimize the loss of charge confinement in 2-dimensional electron gases and enhance the performance of photoelectrochemical stannate-based devices. PMID:28195149

  8. Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO3 (A=Ca, Sr, and Ba) and SrTiO3

    NASA Astrophysics Data System (ADS)

    Baniecki, John D.; Yamazaki, Takashi; Ricinschi, Dan; van Overmeere, Quentin; Aso, Hiroyuki; Miyata, Yusuke; Yamada, Hiroaki; Fujimura, Norifumi; Maran, Ronald; Anazawa, Toshihisa; Valanoor, Nagarajan; Imanaka, Yoshihiko

    2017-02-01

    The valence band (VB) electronic structure and VB alignments at heterointerfaces of strained epitaxial stannate ASnO3 (A=Ca, Sr, and Ba) thin films are characterized using in situ X-ray and ultraviolet photoelectron spectroscopies, with band gaps evaluated using spectroscopic ellipsometry. Scanning transmission electron microscopy with geometric phase analysis is used to resolve strain at atomic resolution. The VB electronic structure is strain state dependent in a manner that correlated with a directional change in Sn-O bond lengths with strain. However, VB offsets are found not to vary significantly with strain, which resulted in ascribing most of the difference in band alignment, due to a change in the band gaps with strain, to the conduction band edge. Our results reveal significant strain tuning of conduction band offsets using epitaxial buffer layers, with strain-induced offset differences as large as 0.6 eV possible for SrSnO3. Such large conduction band offset tunability through elastic strain control may provide a pathway to minimize the loss of charge confinement in 2-dimensional electron gases and enhance the performance of photoelectrochemical stannate-based devices.

  9. Effects of strain, d-band filling, and oxidation state on the bulk electronic structure of cubic 3d perovskites

    NASA Astrophysics Data System (ADS)

    Akhade, Sneha A.; Kitchin, John R.

    2011-09-01

    The properties of the d-band structure of the transition metal atom in cubic LaBO3 and SrBO3 perovskites (where B = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu) and their dependence on strain, d-band filling, and oxidation state were investigated using density functional theory calculations and atom-projected density of states. The strain dependence of the d-band width is shown to depend systematically on the size of the B atom. We show that the transition metal d-band width and center are linearly correlated with each other in agreement with a rectangular band model. A simple matrix element formalism based on the solid state table can readily predict the strain dependence of the d-band width.

  10. Dual Character of the Electronic Structure of YBa2Cu4O8: The Conduction Bands of CuO2 Planes and CuO Chains

    NASA Astrophysics Data System (ADS)

    Kondo, T.; Khasanov, R.; Karpinski, J.; Kazakov, S. M.; Zhigadlo, N. D.; Ohta, T.; Fretwell, H. M.; Palczewski, A. D.; Koll, J. D.; Mesot, J.; Rotenberg, E.; Keller, H.; Kaminski, A.

    2007-04-01

    We use microprobe angle-resolved photoemission spectroscopy (μARPES) to separately investigate the electronic properties of CuO2 planes and CuO chains in the high temperature superconductor, YBa2Cu4O8. For the CuO2 planes, a two-dimensional (2D) electronic structure is observed and, in contrast to Bi2Sr2CaCu2O8+δ, the bilayer splitting is almost isotropic and 50% larger, which strongly suggests that bilayer splitting has no direct effect on the superconducting properties. In addition, the scattering rate for the bonding band is about 1.5 times stronger than the antibonding band and is independent of momentum. For the CuO chains, the electronic structure is quasi-one-dimensional and consists of a conduction and insulating band. Finally, we find that the conduction electrons are well confined within the planes and chains with a nontrivial hybridization.

  11. Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species.

    PubMed

    Saleh, Navid B; Milliron, Delia J; Aich, Nirupam; Katz, Lynn E; Liljestrand, Howard M; Kirisits, Mary Jo

    2016-10-15

    Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics.

  12. Investigation of the electronic and structural properties of potassium hexaboride, KB6, by transport, magnetic susceptibility, EPR, and NMR measurements, temperature-dependent crystal structure determination, and electronic band structure calculations.

    PubMed

    Ammar, A; Ménétrier, M; Villesuzanne, A; Matar, S; Chevalier, B; Etourneau, J; Villeneuve, G; Rodríguez-Carvajal, J; Koo, H-J; Smirnov, A I; Whangbo, M-H

    2004-08-09

    The electronic and structural properties of potassium hexaboride, KB(6), were examined by transport, magnetic susceptibility, EPR, and NMR measurements, temperature-dependent crystal structure determination, and electronic band structure calculations. The valence bands of KB(6) are partially empty, but the electrical resistivity of KB(6) reveals that it is not a normal metal. The magnetic susceptibility as well as EPR and NMR measurements show the presence of localized electrons in KB(6). The EPR spectra of KB(6) have two peaks, a broad ( approximately 320 G) and a narrow (less than approximately 27 G) line width, and the temperature-dependence of the magnetic susceptibility of KB(6) exhibits a strong hysteresis below 70 K. The temperature-dependent crystal structure determination of KB(6) shows the occurrence of an unusual variation in the unit cell parameter hence supporting that the hysteresis of the magnetic susceptibility is a bulk phenomenon. The line width DeltaH(pp) of the broad EPR signal is independent of temperature and EPR frequency. This finding indicates that the line broadening results from the dipole-dipole interaction, and the spins responsible for the broad EPR peak has the average distance of approximately 1.0 nm. To explain these apparently puzzling properties, we examined a probable mechanism of electron localization in KB(6) and its implications.

  13. Dual character of the electronic structure in YBa2Cu4O8: conduction bands of CuO2 planes and CuO chains

    NASA Astrophysics Data System (ADS)

    Kaminski, A.; Kondo, T.; Khasanov, R.; Karpinski, J.; Kazakov, S. M.; Zhigadlo, N. D.; Ohta, T.; Fretwell, H. M.; Palczewski, A. D.; Koll, J. D.; Mesot, J.; Rotenberg, E.; Keller, H.

    2007-03-01

    We use microprobe Angle-Resolved Photoemission Spectroscopy (μARPES) to separately investigate the electronic properties of CuO2 planes and CuO chains in the high temperature superconductor, YBa2Cu4O8. In the CuO2 planes, a two dimensional (2D) electronic structure with nearly momentum independent bilayer splitting is observed. The splitting energy is 150 meV at (π,0), almost 50% larger than in Bi2Sr2CaCu2O8+δ and the electron scattering at the Fermi level in the bonding band is about 1.5 times stronger than in the antibonding band. The CuO chains have a quasi one dimensional (1D) electronic structure. We observe two 1D bands separated by ˜ 550meV: a conducting band and an insulating band with an energy gap of ˜240meV. We find that the conduction electrons are well confined within the planes and chains with a non-trivial hybridization.

  14. Crystal symmetry and pressure effects on the valence band structure of γ -InSe and ɛ -GaSe: Transport measurements and electronic structure calculations

    NASA Astrophysics Data System (ADS)

    Errandonea, D.; Segura, A.; Manjón, F. J.; Chevy, A.; Machado, E.; Tobias, G.; Ordejón, P.; Canadell, E.

    2005-03-01

    This paper reports on Hall effect and resistivity measurements under high pressure up to 3-4 GPa in p -type γ -indium selenide (InSe) (doped with As, Cd, or Zn) and ɛ -gallium selenide (GaSe) (doped with N or Sn). The pressure behavior of the hole concentration and mobility exhibits dramatic differences between the two layered compounds. While the hole concentration and mobility increase moderately and monotonously in ɛ -GaSe, a large increase of the hole concentration near 0.8 GPa and a large continuous increase of the hole mobility, which doubled its ambient pressure value by 3.2 GPa, is observed in γ -InSe. Electronic structure calculations show that the different pressure behavior of hole transport parameters can be accounted for by the evolution of the valence-band maximum in each material under compression. While the shape of the valence band maximum is virtually pressure-insensitive in ɛ -GaSe, it changes dramatically in γ -InSe, with the emergence of a ring-shaped subsidiary maximum that becomes the absolute valence-band maximum as pressure increases. These differences are shown to be a consequence of the presence or absence of a symmetry element (mirror plane perpendicular to the anisotropy axis) in the point group of each polytype ( D3h for the ɛ -polytype and C3v for the γ -polytype), resulting in different selection rules that affect the k⃗•p⃗ interaction between valence bands.

  15. Electronic structure of Na{sub x}Cu{sub 1-x}In{sub 5}S{sub 8} compounds: X-ray photoemission spectroscopy study and band structure calculations

    SciTech Connect

    Guillot-Deudon, Catherine; Harel, Sylvie; Mokrani, Arezki; Lafond, Alain; Barreau, Nicolas; Fernandez, Vincent; Kessler, John

    2008-12-15

    The aim of the present work is to complete a preliminary study concerning the electronic band structure investigations of Na{sub x}Cu{sub 1-x}In{sub 5}S{sub 8} compounds with 0{<=}x{<=}1, which are expected to be formed at the Cu(In,Ga)Se{sub 2}/In{sub 2}S{sub 3} interface. The band structure calculations demonstrate that for the compounds containing both Na and Cu, as the Cu content increases the band gap tends to decrease, and x-ray photoemission spectroscopy measurements show that this variation is mainly due to valence-band-maximum shift along the solid solution. The band gap strongly depends on the nature of the monovalent cation, and the band structure calculations demonstrate that the d electrons of copper are responsible for the shift of the valence band. In addition, it is worth noting that the Cu-containing compounds have indirect gaps.

  16. Engineering of optical polarization based on electronic band structures of A-plane ZnO layers under biaxial strains

    SciTech Connect

    Matsui, Hiroaki Tabata, Hitoshi; Hasuike, Noriyuki; Harima, Hiroshi

    2014-09-21

    In-plane anisotropic strains in A-plane layers on the electronic band structure of ZnO were investigated from the viewpoint of optical polarization anisotropy. Investigations utilizing k·p perturbation theory revealed that energy transitions and associated oscillation strengths were dependent on in-plane strains. The theoretical correlation between optical polarizations and in-plane strains was experimentally demonstrated using A-plane ZnO layers with different in-plane strains. Finally, optical polarization anisotropy and its implications for in-plane optical properties are discussed in relation to the energy shift between two orthogonal directions. Higher polarization rotations were obtained in an A-plane ZnO layer with in-plane biaxially compressive strains as compared to strain-free ZnO. This study provides detailed information concerning the role played by in-plane strains in optically polarized applications based on nonpolar ZnO in the ultra-violet region.

  17. Calculation of the Energy-Band Structure of the Kronig-Penney Model Using the Nearly-Free and Tightly-Bound-Electron Approximations

    ERIC Educational Resources Information Center

    Wetsel, Grover C., Jr.

    1978-01-01

    Calculates the energy-band structure of noninteracting electrons in a one-dimensional crystal using exact and approximate methods for a rectangular-well atomic potential. A comparison of the two solutions as a function of potential-well depth and ratio of lattice spacing to well width is presented. (Author/GA)

  18. Calculation of the Energy-Band Structure of the Kronig-Penney Model Using the Nearly-Free and Tightly-Bound-Electron Approximations

    ERIC Educational Resources Information Center

    Wetsel, Grover C., Jr.

    1978-01-01

    Calculates the energy-band structure of noninteracting electrons in a one-dimensional crystal using exact and approximate methods for a rectangular-well atomic potential. A comparison of the two solutions as a function of potential-well depth and ratio of lattice spacing to well width is presented. (Author/GA)

  19. Valence electronic structure of semiconductor quantum dot and wide band gap oxide interfaces by ultraviolet photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Timp, Brooke Andrea

    Energy level alignment is an important factor in efficient charge transfer at an interface between two semiconductors. This topic is explored in model systems that are relevant to quantum dot-sensitized solar cells, inorganic semiconductor nanoparticles adsorbed on single crystal wide band gap oxide substrates, using ultraviolet photoelectron spectroscopy. Cadmium selenide quantum dots are assembled on a ZnO (10 1¯ 0) surface using 3-mercaptopropionic acid linkers. The valence band maximum of the CdSe quantum dots is found to be located at 1.1 +/- 0.1 eV above the valence band maximum of ZnO, nearly independent of the size of the quantum dots (2.1-4.2 nm). This finding suggests that, upon adsorption, there is strong electronic interaction between CdSe quantum dots and the ZnO surface. As a result, varying the quantum dot size mainly tunes the alignment of the conduction band minimum of CdSe with respect to that of the ZnO surface. Sub-monolayer films of PbSe quantum dots are prepared on single crystal substrates, ZnO (10 1 0 ) and TiO2 (110), and exposed to ligand solutions, either hydrazine or 1,2-ethanedithiol (EDT) in acetonitrile. Interfacial energy alignment is measured as a function of quantum dot size, substrate and ligand treatment. The affect of the ligand treatments on the energy alignment is substrate-dependent. The valence band maximum of the dots is size-independent on ZnO due to strong electronic interactions with the substrate; in particular, EDT-treated films show significant enhancement of quantum dot valence band intensity due to electronic coupling with the ZnO surface. In contrast, the quantum dot valence band maximum is size-dependent and shows a smaller shift between ligand treatments for films on TiO2, suggesting weaker quantum dot-substrate interactions. In most cases the measured alignment predicts that electron injection from a photoexcited PbSe quantum dot to either ZnO or TiO2 will necessitate the involvement of higher-lying levels

  20. On the influence of tetrahedral covalent-hybridization on electronic band structure of topological insulators from first principles

    SciTech Connect

    Zhang, X. M.; Xu, G. Z.; Liu, E. K.; Wang, W. H. Wu, G. H.; Liu, Z. Y.

    2015-01-28

    Based on first-principles calculations, we investigate the influence of tetrahedral covalent-hybridization between main-group and transition-metal atoms on the topological band structures of binary HgTe and ternary half-Heusler compounds, respectively. Results show that, for the binary HgTe, when its zinc-blend structure is artificially changed to rock-salt one, the tetrahedral covalent-hybridization will be removed and correspondingly the topologically insulating band character lost. While for the ternary half-Heusler system, the strength of covalent-hybridization can be tuned by varying both chemical compositions and atomic arrangements, and the competition between tetrahedral and octahedral covalent-hybridization has been discussed in details. As a result, we found that a proper strength of tetrahedral covalent-hybridization is probably in favor to realizing the topologically insulating state with band inversion occurring at the Γ point of the Brillouin zone.

  1. Electronic structure of cerium hydrides: Augmented-plane-wave linear-combination-of-atomic-orbitals energy bands

    NASA Astrophysics Data System (ADS)

    Fujimori, A.; Minami, F.; Tsuda, N.

    1980-10-01

    Electronic energy bands have been calculated for CeH2 and CeH3 using the augmented-plane-wave method and have been fitted by the linear-combination-of-atomic-orbitals interpolation scheme. The partial densities of states and the numbers of electrons on atomic orbitals indicate that hydrogen in CeH2 is almost anionlike. When going from CeH2 to CeH3, shallow bonding levels are found to form between the third hydrogen state and conduction electrons of CeH2, other features of CeH2 being little affected by it. Thus the rare-earth dihydrides are regarded as ionic compounds similar to the saline-element dihydrides except for the presence of d-like conduction electrons.

  2. Electronic structure of polyenes related to the visual chromophore. A simple model for the observed band shapes.

    PubMed Central

    Hemley, R; Kohler, B E

    1977-01-01

    A model is presented which attributes the widths of absorption bands in carotenoids to conformational disorder induced by the beta-ionylidene moiety. With reasonable parameter choices, the model gives a good quantitative fit to the spectra observed for four carotenoids and at the same time accounts for the lack of structure in the long-wavelength absorption of retinal. PMID:922126

  3. Intermetallic solid solution Fe{sub 1-x}Co{sub x}Ga{sub 3}: Synthesis, structure, NQR study and electronic band structure calculations

    SciTech Connect

    Verchenko, V.Yu.; Likhanov, M.S.; Kirsanova, M.A.; Gippius, A.A; Tkachev, A.V.; Gervits, N.E.; Galeeva, A.V.; Buettgen, N.; Kraetschmer, W.; Lue, C.S.; Okhotnikov, K.S.; Shevelkov, A.V.

    2012-10-15

    Unlimited solid solution Fe{sub 1-x}Co{sub x}Ga{sub 3} was prepared from Ga flux. Its crystal structure was refined for Fe{sub 0.5}Co{sub 0.5}Ga{sub 3} (P4{sub 2}/mnm, a=6.2436(9), c=6.4654(13), Z=4) and showed no ordering of the metal atoms. A combination of the electronic band structure calculations within the density functional theory (DFT) approach and {sup 69,71}Ga nuclear quadrupole resonance (NQR) spectroscopy clearly shows that the Fe-Fe and Co-Co dumbbells are preferred to the Fe-Co dumbbells in the crystals structure. The band structure features a band gap of about 0.4 eV, with the Fermi level crossing peaks of a substantial density of electronic states above the gap for x>0. The solid solution is metallic for x>0.025. The study of the nuclear spin-lattice relaxation shows that the rate of the relaxation, 1/T{sub 1}, is very sensitive to the Co concentration and correlates well with the square of the density of states at the Fermi level, N{sup 2}(E{sub F}). - Graphical abstract: Rate of the nuclear spin-lattice relaxation, 1/T{sub 1}, observed in the {sup 69}Ga NQR experiments for the intermetallic solid solution Fe{sub 1-x}Co{sub x}Ga{sub 3} is the highest for x=0.25 with the highest calculated density of electronic states at the Fermi level, N(E{sub F}); in general, 1/T{sub 1} correlates with N{sup 2}(E{sub F}). Highlights: Black-Right-Pointing-Pointer Fe{sub 1-x}Co{sub x}Ga{sub 3} solid solution is prepared in single crystalline form from Ga flux. Black-Right-Pointing-Pointer In the crystal structure Fe-Fe and Co-Co dumbbells are preferred to Fe-Co dumbbells. Black-Right-Pointing-Pointer Metal-to-semiconductor transition occurs at 0

  4. Electronic band structure and optical gain of GaNxBiyAs1-x-y/GaAs pyramidal quantum dots

    NASA Astrophysics Data System (ADS)

    Song, Zhi-Gang; Bose, Sumanta; Fan, Wei-Jun; Li, Shu-Shen

    2016-04-01

    The electronic band structure and optical gain of GaNxBiyAs1-x-y/GaAs pyramidal quantum dots (QDs) are investigated using the 16-band k ṡ p model with constant strain. The optical gain is calculated taking both homogeneous and inhomogeneous broadenings into consideration. The effective band gap falls as we increase the composition of nitrogen (N) and bismuth (Bi) and with an appropriate choice of composition we can tune the emission wavelength to span within 1.3 μm-1.55 μm, for device application in fiber technology. The extent of this red shift is more profound in QDs compared with bulk material due to quantum confinement. Other factors affecting the emission characteristics include virtual crystal, strain profile, band anticrossing (BAC), and valence band anticrossing (VBAC). The strain profile has a profound impact on the electronic structure, specially the valence band of QDs, which can be determined using the composition distribution of wave functions. All these factors eventually affect the optical gain spectrum. With an increase in QD size, we observe a red shift in the emission energy and emergence of secondary peaks owing to transitions or greater energy compared with the fundamental transition.

  5. Effects of Side-Chain and Electron Exchange Correlation on the Band Structure of Perylene Diimide Liquid Crystals: A Density Functional Study

    SciTech Connect

    Arantes, J. T.; Lima, M. P.; Fazzio, A.; Xiang, H.; Wei, S. H.; Dalpian, G. M.

    2009-04-01

    The structural and electronic properties of perylene diimide liquid crystal PPEEB are studied using ab initio methods based on the density functional theory (DFT). Using available experimental crystallographic data as a guide, we propose a detailed structural model for the packing of solid PPEEB. We find that due to the localized nature of the band edge wave function, theoretical approaches beyond the standard method, such as hybrid functional (PBE0), are required to correctly characterize the band structure of this material. Moreover, unlike previous assumptions, we observe the formation of hydrogen bonds between the side chains of different molecules, which leads to a dispersion of the energy levels. This result indicates that the side chains of the molecular crystal not only are responsible for its structural conformation but also can be used for tuning the electronic and optical properties of these materials.

  6. Tuning the electronic band gap of graphene by oxidation

    SciTech Connect

    Dabhi, Shweta D.; Jha, Prafulla K.

    2015-06-24

    Using plane wave pseudo potential density functional theory, we studied the electronic properties of graphene with different C:O ratio. In this work, we discussed the changes that occur in electronic band structure of graphene functionalized with different amount of epoxy group. Electronic band gap depends on C:O ratio in graphene oxide containing epoxy group. The present work will have its implication for making devices with tunable electronic properties by oxidizing graphene.

  7. Band-edge electronic structure of β-In2S3: the role of s or p orbitals of atoms at different lattice positions.

    PubMed

    Zhao, Zongyan; Cao, Yuechan; Yi, Juan; He, Xijia; Ma, Chenshuo; Qiu, Jianbei

    2012-04-23

    As a promising solar-energy material, the electronic structure and optical properties of Beta phase indium sulfide (β-In(2)S(3)) are still not thoroughly understood. This paper devotes to solve these issues using density functional theory calculations. β-In(2)S(3) is found to be an indirect band gap semiconductor. The roles of its atoms at different lattice positions are not exactly identical because of the unique crystal structure. Additonally, a significant phenomenon of optical anisotropy was observed near the absorption edge. Owing to the low coordination numbers of the In3 and S2 atoms, the corresponding In3-5s states and S2-3p states are crucial for the composition of the band-edge electronic structure, leading to special optical properties and excellent optoelectronic performances.

  8. Electronic transport and band structures of GaAs/AlAs nanostructures superlattices for near-infrared detection

    NASA Astrophysics Data System (ADS)

    Barkissy, Driss; Nafidi, Abdelhakim; Boutramine, Abderrazak; Benchtaber, Nassima; Khalal, Ali; El Gouti, Thami

    2017-01-01

    We report here the theoretical calculations of band structures E( d 1), E( k z , k p ) and effective mass along the growth axis and in the plane of GaAs/Al x Ga1- x As superlattices, in the envelope function formalism. The effect of valence band offset, well thickness and temperature on the band structures, has been also studied. Our results show that a transition from indirect to direct band gap in (GaAs) m /(AlAs)4 takes place between m = 5 and 6 monolayers at room temperature. Samples (GaAs)9/(AlAs)4 and GaAs( d 1 = 10 nm)/Al0.15Ga0.85As( d 2 = 15 nm) have a direct band gap of 1.747 eV at room temperature and 1.546 eV at T = 30 mK, respectively. Their corresponding cutoff wavelengths are located in the near infrared region. We have interpreted the photoluminescence measurements of Ledentsov et al. in GaAs( d 1 = 2.52 nm)/AlAs ( d 1 = 1.16 nm) and the oscillations in the magnetoresistance observed by Kawamura et al. in GaAs/Al0.15Ga0.85As superlattice. In the later, the existence of discrete quantized levels along the growth direction z indicates extremely low interactions between adjacent wells leading to the use in parallel transport. The position of Fermi level predicts that this sample exhibits n-type conductivity. These results were compared and discussed with the available data in the literature and can be used as a guide for the design of infrared nanostructured detectors.

  9. Substrate-induced band structure and electronic properties in graphene/Al2O3(0001) interface

    NASA Astrophysics Data System (ADS)

    Ilyasov, V. V.; Ershov, I. V.; Ilyasov, A. V.; Popova, I. G.; Nguyen, Chuong V.

    2015-02-01

    Band structure investigation results of two-dimensional (2D) graphene (SLG) on Al2O3(0001) using the density functional theory (DFT) method as a possible element base for spintronics are presented. Regularities of a band structure change in the order three-dimensional (3D) Al2O3 → 2D Al2O3(0001) → 2D SLG/Al2O3(0001) as well as features of a chemical bond between SLG and sapphire on the basis of DFT calculations have been studied. Analysis of the band structure and interatomic spacing in the interface for both models allows speaking about physical SLG adsorption on the (0001)-surface sapphire constrained by aluminum atoms. Energy distribution features of surface states in 2D SLG/Al2O3(0001) interface are discussed. Analysis of effective atomic charge in the interface revealed surface charge fluctuations on the substrate in the presence of SLG, which can be explained by a decrease of the energy of occupied subsurface Al2O3 states relatively to the Fermi level.

  10. Electronic Structures, Bonding Configurations, and Band-Gap-Opening Properties of Graphene Binding with Low-Concentration Fluorine

    DOE PAGES

    Duan, Yuhua; Stinespring, Charter D.; Chorpening, Benjamin

    2015-06-18

    To better understand the effects of low-level fluorine in graphene-based sensors, first-principles density functional theory (DFT) with van der Waals dispersion interactions has been employed to investigate the structure and impact of fluorine defects on the electrical properties of single-layer graphene films. The results show that both graphite-2H and graphene have zero band gaps. When fluorine bonds to a carbon atom, the carbon atom is pulled slightly above the graphene plane, creating what is referred to as a CF defect. The lowest-binding energy state is found to correspond to two CF defects on nearest neighbor sites, with one fluorine abovemore » the carbon plane and the other below the plane. Overall this has the effect of buckling the graphene. The results further show that the addition of fluorine to graphene leads to the formation of an energy band (BF) near the Fermi level, contributed mainly from the 2p orbitals of fluorine with a small contribution from the porbitals of the carbon. Among the 11 binding configurations studied, our results show that only in two cases does the BF serve as a conduction band and open a band gap of 0.37 eV and 0.24 eV respectively. The binding energy decreases with decreasing fluorine concentration due to the interaction between neighboring fluorine atoms. The obtained results are useful for sensor development and nanoelectronics.« less

  11. Electronic Structures, Bonding Configurations, and Band-Gap-Opening Properties of Graphene Binding with Low-Concentration Fluorine.

    PubMed

    Duan, Yuhua; Stinespring, Charter D; Chorpening, Benjamin

    2015-10-01

    To better understand the effects of low-level fluorine in graphene-based sensors, first-principles density functional theory (DFT) with van der Waals dispersion interactions has been employed to investigate the structure and impact of fluorine defects on the electrical properties of single-layer graphene films. The results show that both graphite-2 H and graphene have zero band gaps. When fluorine bonds to a carbon atom, the carbon atom is pulled slightly above the graphene plane, creating what is referred to as a CF defect. The lowest-binding energy state is found to correspond to two CF defects on nearest neighbor sites, with one fluorine above the carbon plane and the other below the plane. Overall this has the effect of buckling the graphene. The results further show that the addition of fluorine to graphene leads to the formation of an energy band (BF) near the Fermi level, contributed mainly from the 2p orbitals of fluorine with a small contribution from the p orbitals of the carbon. Among the 11 binding configurations studied, our results show that only in two cases does the BF serve as a conduction band and open a band gap of 0.37 eV and 0.24 eV respectively. The binding energy decreases with decreasing fluorine concentration due to the interaction between neighboring fluorine atoms. The obtained results are useful for sensor development and nanoelectronics.

  12. Electronic Structures, Bonding Configurations, and Band-Gap-Opening Properties of Graphene Binding with Low-Concentration Fluorine

    SciTech Connect

    Duan, Yuhua; Stinespring, Charter D.; Chorpening, Benjamin

    2015-06-18

    To better understand the effects of low-level fluorine in graphene-based sensors, first-principles density functional theory (DFT) with van der Waals dispersion interactions has been employed to investigate the structure and impact of fluorine defects on the electrical properties of single-layer graphene films. The results show that both graphite-2H and graphene have zero band gaps. When fluorine bonds to a carbon atom, the carbon atom is pulled slightly above the graphene plane, creating what is referred to as a CF defect. The lowest-binding energy state is found to correspond to two CF defects on nearest neighbor sites, with one fluorine above the carbon plane and the other below the plane. Overall this has the effect of buckling the graphene. The results further show that the addition of fluorine to graphene leads to the formation of an energy band (BF) near the Fermi level, contributed mainly from the 2p orbitals of fluorine with a small contribution from the porbitals of the carbon. Among the 11 binding configurations studied, our results show that only in two cases does the BF serve as a conduction band and open a band gap of 0.37 eV and 0.24 eV respectively. The binding energy decreases with decreasing fluorine concentration due to the interaction between neighboring fluorine atoms. The obtained results are useful for sensor development and nanoelectronics.

  13. Electronic structures of filled tetrahedral semiconductors LiMgN and LiZnN: conduction band distortion

    NASA Astrophysics Data System (ADS)

    Yu, L. H.; Yao, K. L.; Liu, Z. L.

    2004-12-01

    The band structures of the filled tetrahedral semiconductors LiMgN and LiZnN, viewed as the zinc-blende (MgN) - and (ZnN) - lattices partially filled with He-like Li + ion interstitials, were studied using the full-potential linearized augmented plane wave method (FP-LAPW) within density functional theory. The conduction band distortions of LiMgN and LiZnN, compared to their “parent” zinc-blende analog AlN and GaN, are discussed. It was found that the insertion of Li + ions at the interstitial sites near the cation or anion pushes the conduction band minimum of the X point in the Brillouin zone upward, relative to that of the Γ point, for both (MgN) - and (ZnN) - lattices (the valence band maximum is at Γ for AlN, GaN, LiMgN, and LiZnN), which provides a method to convert a zinc-blende indirect gap semiconductor into a direct gap material, but the conduction band distortion of the β phase (Li + near the cation) is quite stronger than that of the α phase (Li + near the anion). The total energy calculations show the α phase to be more stable than the β phase for both LiMgN and LiZnN. The Li-N and Mg-N bonds exhibit a strong ionic character, whereas the Zn-N bond has a strong covalent character in LiMgN and LiZnN.

  14. Interaction of an ultrarelativistic electron bunch train with a W-band accelerating structure: High power and high gradient

    DOE PAGES

    Wang, D.; Antipov, S.; Jing, C.; ...

    2016-02-05

    Electron beam interaction with high frequency structures (beyond microwave regime) has a great impact on future high energy frontier machines. We report on the generation of multimegawatt pulsed rf power at 91 GHz in a planar metallic accelerating structure driven by an ultrarelativistic electron bunch train. This slow-wave wakefield device can also be used for high gradient acceleration of electrons with a stable rf phase and amplitude which are controlled by manipulation of the bunch train. To achieve precise control of the rf pulse properties, a two-beam wakefield interferometry method was developed in which the rf pulse, due to themore » interference of the wakefields from the two bunches, was measured as a function of bunch separation. As a result, measurements of the energy change of a trailing electron bunch as a function of the bunch separation confirmed the interferometry method.« less

  15. Interaction of an ultrarelativistic electron bunch train with a W-band accelerating structure: High power and high gradient

    SciTech Connect

    Wang, D.; Antipov, S.; Jing, C.; Power, J. G.; Conde, M.; Wisniewski, E.; Liu, W.; Qiu, J.; Ha, G.; Dolgashev, V.; Tang, C.; Gai, W.

    2016-02-05

    Electron beam interaction with high frequency structures (beyond microwave regime) has a great impact on future high energy frontier machines. We report on the generation of multimegawatt pulsed rf power at 91 GHz in a planar metallic accelerating structure driven by an ultrarelativistic electron bunch train. This slow-wave wakefield device can also be used for high gradient acceleration of electrons with a stable rf phase and amplitude which are controlled by manipulation of the bunch train. To achieve precise control of the rf pulse properties, a two-beam wakefield interferometry method was developed in which the rf pulse, due to the interference of the wakefields from the two bunches, was measured as a function of bunch separation. As a result, measurements of the energy change of a trailing electron bunch as a function of the bunch separation confirmed the interferometry method.

  16. Interaction of an Ultrarelativistic Electron Bunch Train with a W -Band Accelerating Structure: High Power and High Gradient

    NASA Astrophysics Data System (ADS)

    Wang, D.; Antipov, S.; Jing, C.; Power, J. G.; Conde, M.; Wisniewski, E.; Liu, W.; Qiu, J.; Ha, G.; Dolgashev, V.; Tang, C.; Gai, W.

    2016-02-01

    Electron beam interaction with high frequency structures (beyond microwave regime) has a great impact on future high energy frontier machines. We report on the generation of multimegawatt pulsed rf power at 91 GHz in a planar metallic accelerating structure driven by an ultrarelativistic electron bunch train. This slow-wave wakefield device can also be used for high gradient acceleration of electrons with a stable rf phase and amplitude which are controlled by manipulation of the bunch train. To achieve precise control of the rf pulse properties, a two-beam wakefield interferometry method was developed in which the rf pulse, due to the interference of the wakefields from the two bunches, was measured as a function of bunch separation. Measurements of the energy change of a trailing electron bunch as a function of the bunch separation confirmed the interferometry method.

  17. Low-temperature electronic properties and band structures of LaTE2Si2 (TE=Fe, Co, Ag and Au)

    NASA Astrophysics Data System (ADS)

    Ciesielski, K.; Chajewski, G.; Samsel-Czekała, M.; Hackemer, A.; Pikul, A. P.; Kaczorowski, D.

    2017-05-01

    Motivated by recent discovery of a non-Fermi liquid behavior and unconventional superconductivity in YFe2Ge2 we performed physical properties studies and fully relativistic band structure calculations for a few La-based silicides, namely LaFe2Si2, LaCo2Si2, LaAg2Si2 and LaAu2Si2. Electrical resistivity and heat capacity measurements revealed decreasing influence of d-electrons of the transition elements on the conduction electron scattering and the Sommerfeld coefficient with increasing the atomic number. Band structure calculations fully corroborated the experimental findings. No superconductivity was found in the investigated compounds down to 0.35 K.

  18. Electronic band structure of ReS2 by high-resolution angle-resolved photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Webb, James L.; Hart, Lewis S.; Wolverson, Daniel; Chen, Chaoyu; Avila, Jose; Asensio, Maria C.

    2017-09-01

    The rhenium-based transition metal dichalcogenides (TMDs) are atypical of the TMD family due to their highly anisotropic crystalline structure and are recognized as promising materials for two-dimensional heterostructure devices. The nature of the band gap (direct or indirect) for bulk, few-, and single-layer forms of ReS2 is of particular interest, due to its comparatively weak interplanar interaction. However, the degree of interlayer interaction and the question of whether a transition from indirect to direct gap is observed on reducing thickness (as in other TMDs) are controversial. We present a direct determination of the valence band structure of bulk ReS2 using high-resolution angle-resolved photoemission spectroscopy. We find a clear in-plane anisotropy due to the presence of chains of Re atoms, with a strongly directional effective mass which is larger in the direction orthogonal to the Re chains (2.2 me ) than along them (1.6 me ). An appreciable interplane interaction results in an experimentally measured difference of ≈100 -200 meV between the valence band maxima at the Z point (0,0,1/2 ) and the Γ point (0,0,0) of the three-dimensional Brillouin zone. This leads to a direct gap at Z and a close-lying but larger gap at Γ , implying that bulk ReS2 is marginally indirect. This may account for recent conflicting transport and photoluminescence measurements and the resulting uncertainty about the nature of the band gap in this material.

  19. Reconstructing the energy band electronic structure of pulsed laser deposited CZTS thin films intended for solar cell absorber applications

    NASA Astrophysics Data System (ADS)

    Pandiyan, Rajesh; Oulad Elhmaidi, Zakaria; Sekkat, Zouheir; Abd-lefdil, Mohammed; El Khakani, My Ali

    2017-02-01

    We report here on the use of pulsed KrF-laser deposition (PLD) technique for the growth of high-quality Cu2ZnSnS4 (CZTS) thin films onto Si, and glass substrates without resorting to any post sulfurization process. The PLD-CZTS films were deposited at room temperature (RT) and then subjected to post annealing at different temperatures ranging from 200 to 500 °C in Argon atmosphere. The X-ray diffraction and Raman spectroscopy confirmed that the PLD films crystallize in the characteristic kesterite CZTS structure regardless of their annealing temperature (Ta), but their crystallinity is much improved for Ta ≥ 400 °C. The PLD-CZTS films were found to exhibit a relatively dense morphology with a surface roughness (RMS) that increases with Ta (from ∼14 nm at RT to 70 nm at Ta = 500 °C with a value around 40 nm for Ta = 300-400 °C). The optical bandgap of the PLD-CZTS films, was derived from UV-vis transmission spectra analysis, and found to decrease from 1.73 eV for non-annealed films to ∼1.58 eV for those annealed at Ta = 300 °C. These band gap values are very close to the optimum value needed for an ideal solar cell absorber. In order to achieve a complete reconstruction of the one-dimensional energy band structure of these PLD-CZTS absorbers, we have combined both XPS and UPS spectroscopies to determine their chemical bondings, the position of their valence band maximum (relative to Fermi level), and their work function values. This enabled us to sketch out, as accurately as possible, the band alignment of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials.

  20. The electronic band structure of Ge1-x Sn x in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein-Moss effect

    NASA Astrophysics Data System (ADS)

    Polak, M. P.; Scharoch, P.; Kudrawiec, R.

    2017-05-01

    A comprehensive and detailed study of the composition dependence of lattice constants, band gaps and band offsets has been performed for bulk Ge1-x Sn x alloy in the full composition range using state-of-the-art density functional theory methods. A spectral weight approach to band unfolding has been applied as a means of distinguishing the indirect and direct band gaps from folded supercell band structures. In this way, four characteristic regions of the band gap character have been identified for Ge1-x Sn x alloy: an indirect band gap (x  <  6.5%), a direct band gap (6.5%  <  x  <  25%) and an inverse band gap (x  >  25%) with inverse spin-orbit split-off for 45%  <  x  <  85%. In general, it has been observed that the bowing parameters of band edges (Γ and L-point in conduction band (CBΓ and CB L ), valence band (VB), and spin-orbit (SO) band) are rather large ({{b}\\text{C{{\\text{B}} Γ }}}   =  2.43  ±  0.06 eV, {{b}\\text{C{{\\text{B}}L}}}   =  0.64  ±  0.04 eV, {{b}\\text{VB}}   =  -0.59  ±  0.04 eV, and {{b}\\text{SO}}   =  -0.49  ±  0.05 eV). This indicates that Ge1-x Sn x behaves like a highly mismatched group IV alloy. The composition dependence of lattice constant shows negligible bowing (b a   =  -0.083 Å). Obtained results have been compared with available experimental data. The origin of band gap reduction and large bowing has been analyzed and conclusions have been drawn regarding the relationship between experimental and theoretical results. It is shown that due to the low DOS at the Γ-point, a significant filling of CB by electrons in the direct gap regime may easily take place. Therefore, the Burstein-Moss effect should be considered when comparing experimental data with theoretical predictions as has already been shown for other intrinsic n-type narrow gap semiconductors (e.g. InN).

  1. Electronic structure and band gaps in cationic heterocyclic oligomers. Multidimensional analysis of the interplay of heteroatoms, substituents, molecular length, and charge on redox and transparency characteristics.

    PubMed

    Hutchison, Geoffrey R; Ratner, Mark A; Marks, Tobin J

    2005-03-03

    Oxidative doping of extended pi-conjugated polymers and oligomers produces dramatic changes in optical and electrical properties, arising from polaron and soliton-derived midgap states. Despite the great importance of such changes for materials properties, far less is known about the cationic polaron states than about the neutral, semiconducting or insulating, undoped materials. The systematic, multifactor computational analysis of oligoheterocycles such as oligothiophenes, oligofurans, and oligopyrroles presented here affords qualitative and quantitative understanding of the interplay among skeletal substitution pattern, electronic structure, and the effective band gap reduction on p-doping. A simple linear relation is derived for predicting p-doped oligomer and polymer effective band gaps based on those of the neutral oligomers; this relationship confirms the effectiveness of a "fixed band" approximation and explains the counterintuitive increase of the effective band gap on p-doping of many small band gap oligomers. The present analysis also suggests new candidates for transparent conductive polymers and predicts limiting behavior of ionization potential, electron affinity, and other properties for various polyheterocyclic systems. The results yield insight into materials constraints in electrochromic polymers as well as on p- and n-type conductors and semiconductors.

  2. Electronic band structure of Mg -IV -N2 compounds in the quasiparticle-self-consistent G W approximation

    NASA Astrophysics Data System (ADS)

    Jaroenjittichai, Atchara Punya; Lambrecht, Walter R. L.

    2016-09-01

    We present calculations of the lattice constants, structural parameters, bulk moduli, energies of formation, and band structures of Mg -IV -N2 compounds with IV=Si, Ge, Sn by using the full-potential linearized muffin-tin orbital method and the quasiparticle-self-consistent G W approach for the wurtzite-based P n a 21 crystal structure. The lattice parameters calculated with the generalized gradient approximation (GGA) are found to be in good agreement (within 1%) with experiment for the cases of MgSiN2 and MgGeN2, where data are available. Similar to the Zn-IV-N2 compounds, MgSiN2 is found to have an indirect gap slightly lower than the lowest direct gap, while the other materials have direct gaps. The direct gaps, calculated at the GGA lattice constant, range from 3.43 eV for MgSnN2 to 5.14 eV for MgGeN2 and 6.28 eV for MgSiN2 in the 0.8 Σ approximation, i.e., reducing the QS G W Σ by a factor 0.8 and including an estimated zero-point-motion correction. The symmetry character of the valence-band maximum states and their splittings and effective masses are determined. The conduction-band minima are found to have slightly higher Mg s - than Si s -like character in MgSiN2 but in MgGeN2 and MgSnN2, the group-IV-s character becomes increasingly dominant.

  3. Electronic structure of transition metal-doped XNiSn and XCoSb (X = Hf,Zr) phases in the vicinity of the band gap

    NASA Astrophysics Data System (ADS)

    Simonson, J. W.; Poon, S. J.

    2008-06-01

    Half-Heusler alloys of the compositions X1-aAaNi1-bBbSn and X1-aAaCo1-bBbSb (X = Hf,Zr) were synthesized with transition metals (A, B) substituted at the X and Ni/Co sites with the values of a and b between 0 and 0.15. Thermopower and electrical resistivity measurements from room temperature to 1100 K were performed to investigate resultant modifications to the electronic band structure in the vicinity of the band gap. As a result of these substitutions, thermopower was typically reduced across the entire temperature spectrum, in some cases changing sign. In the case of XNiSn-type alloys, electrical resistivity curves were indicative of semiconducting behavior, except in the case of samples in which Sb was introduced to the Sn site as a dopant. XCoSb-type alloys, however, were found to exhibit metallic resistivity behavior for all substitutions investigated. Hall effect measurements were performed to confirm the dominant carrier type and carrier concentration. The effects of transition metal substitution on the locations of a dopant band and the pinned Fermi level were discussed in the light of recent first-principles electronic structure calculations for half-Heusler alloys. For some of the semiconducting alloys, the band gaps that were determined from the high temperature region of the resistivity curves were found to be in closer agreement with those obtained from calculations than previously reported.

  4. Effects of strain, d-band filling, and oxidation state on the surface electronic structure and reactivity of 3d perovskite surfaces

    NASA Astrophysics Data System (ADS)

    Akhade, Sneha A.; Kitchin, John R.

    2012-08-01

    Trends in the dissociative oxygen adsorption energy and oxygen vacancy formation energy on cubic LaBO3 and SrBO3 perovskite (001) surfaces (where B = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu) and their dependence on strain, d-band filling, and oxidation state were examined using density functional theory in the generalized gradient approximation. The effects of strain were found to be small compared to the effects of d-band filling and oxidations state. Electronic structure descriptors such as the d-band center of the B-atom were identified for trends in the dissociative oxygen adsorption energy and for the oxygen vacancy formation energy. A chemical correlation between these two reaction energies was also identified showing the trends in these reaction energies are not independent of each other.

  5. A review on the empirical calculation of the electronic band structure of the valence band of the ideal (001) surface of the III-V and II-VI semiconductor compounds

    NASA Astrophysics Data System (ADS)

    Olguín, D.; Baquero, R.; de Coss, R.

    2012-02-01

    In our previous work we have discussed the valence band electronic band structure of a (001) oriented surface (semi-infinite medium) of some II-VI and III-V zinc-blende semiconductor compounds. For these systems, we have found three characteristic surface resonances, besides the known bulk bands (hh, lh and spin-orbit bands). Two of these resonances correspond to the anion terminated surface and the third one to the cation terminated one. We have shown, specifically, that three non dispersive (001)-surface induced bulk states, in the Γ-X direction of the 2D Brillouin zone, do exist and are characteristic of these systems. The existence of these states has been confirmed, independently, by different experimental groups. In this work, we briefly review the main characteristics of the electronic structure of the (001)-surfaces to up-date their analysis. We found that, in general, the nondispersive states occur in several, if not all, crystal surfaces, and, on general grounds, as the consequence of introducing to an infinite medium a frontier of any kind (not only the vacuum). For that reason we propose here, to name them, more appropriately as Frontier Induced Semi-Infinite Medium (FISIM) states.

  6. A theoretical study of pressure-induced phase transitions and electronic band structure of anti-A-sesquioxide type γ-Be3N2

    NASA Astrophysics Data System (ADS)

    Paliwal, Uttam; Bihari Joshi, Kunj

    2011-06-01

    Structural parameters and electronic band structure of anti-A-sesquioxide (aAs) type γ-Be3N2 are presented following the first-principles linear combination of atomic orbitals method within the framework of a posteriori density-functional theory implemented in the CRYSTAL code. Pressure-induced phase transitions among the four polymorphs α, β, cubic-γ and aAs-γ of Be3N2 are examined. Enthalpy-pressure curves do not show the possibility of pressure-induced structural phase transition to the cubic-γ phase. However, α → aAs-γ and β → aAs-γ structural phase transitions are observed at 139 GPa and 93 GPa, respectively. Band structure calculations predict that aAs-γ Be3N2 is an indirect semiconductor with 4.73 eV bandgap at L point. Variation of bandgap with pressure and deformation potentials are studied for the α, β and aAs-γ polymorphs. Pressure-dependent band structure calculations reveal that, within the low-pressure limit, bandgaps of β and aAs-γ increase with pressure unlike α-Be3N2.

  7. Electronic bands, Fermi surface, and elastic properties of new 4.2 K superconductor SrPtAs with a honeycomb structure from first principles calculations

    NASA Astrophysics Data System (ADS)

    Shein, I. R.; Ivanovskii, A. L.

    2011-10-01

    The hexagonal phase SrPtAs (s.g. P6/ mmm; #194) with a honeycomb lattice structure was recently declared as a new low-temperature ( T C ∼ 4.2 K) superconductor. Here, by means of first-principles calculations the optimized structural parameters, electronic bands, Fermi surface, total and partial densities of states, inter-atomic bonding picture, independent elastic constants, bulk and shear moduli for SrPtAs were obtained for the first time and analyzed in comparison with the related layered superconductor SrPt 2As 2.

  8. First-principles study of the structures and electronic band properties of Bi{sub 2}Te{sub 3} (0 1 1{sup -} 5) nanoribbons

    SciTech Connect

    Ma, Jing; Zhou, Jian-Ping E-mail: zhoujp@tsinghua.org.cn; Yang, Jia; Chen, Xiao-Ming; Zhao, Hong-Sheng; Deng, Chao-Yong

    2015-06-15

    Bi{sub 2}Te{sub 3} is known to be an excellent thermoelectric material as well as a topological insulator. We prepare Bi{sub 2}Te{sub 3} (0 1 1{sup -} 5) nanosheets with a hydrothermal method and find that the interplanar spacings have a little difference though they belong to a same family of crystal planes. Then, we investigate the structural and electronic properties of Bi{sub 2}Te{sub 3} (0 1 1{sup -} 5) nanoribbons with one to six atomic layers by density-functional theory. The results indicate that the nanoribbons exhibit insulator with a band gap except the three-atomic-layer ribbon, which unexpectedly shows a metallic behavior with a gapless band structure.

  9. Band offsets and electronic structures of interface between In{sub 0.5}Ga{sub 0.5}As and InP

    SciTech Connect

    Cai, Genwang; Wang, Changhong; Wang, Weichao; Liang, Erjun

    2016-02-07

    III–V semiconductor interfacing with high-κ gate oxide is crucial for the high mobility metal-oxide-semiconductor field transistor device. With density functional theory calculations, we explored the band offsets and electronic structures of the In{sub 0.5}Ga{sub 0.5}As/InP interfaces with various interfacial bondings. Among six different bonding interfaces, we found that P-In(Ga) bonding interface showed the highest stability. Local density of states calculations was adopted to calculate the band offsets. Except for the metallic interface, we noticed that neither valence band offset nor conduction band offset depended on the interfacial bondings. For the most stable P-In(Ga) interface, we did not observe any gap states. Furthermore, we explored the P-In(Ga) interfaces with interfacial P-As exchange defects, which slightly modified the interface stability and the band offsets but did not produce any gap states. These findings provide solid evidence that InP could serve as a promising interfacial passivation layer between III–V material and high-κ oxide in the application of high mobility devices.

  10. Ballistic-electron-emission spectroscopy of Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

    SciTech Connect

    OShea, J.J.; Brazel, E.G.; Rubin, M.E.; Bhargava, S.; Chin, M.A.; Narayanamurti, V.

    1997-07-01

    We report an extensive investigation of semiconductor band-structure effects in single-barrier Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0{le}x{le}1). The initial ({Gamma}) BEES thresholds for Al{sub x}Ga{sub 1{minus}x}As single barriers with 0{le}x{le}0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements at 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime ({ital x}{gt}0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al{sub x}Ga{sub 1{minus}x}As {ital X} valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al{sub x}Ga{sub 1{minus}x}As interface produces a significant fraction of this{ital X} valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al{sub x}Ga{sub 1{minus}x}As {Gamma}, {ital L}, and {ital X} points yields good agreement over the entire composition range. {copyright} {ital 1997} {ital The American Physical Society}

  11. Structurally Integrated X-Band Array Development

    DTIC Science & Technology

    2006-10-01

    work in progress towards the development of a very large structural x-band electronically scanned array (ESA). A building block approach that...significant structural testing from coupon through large scale structural validation have been complete and is reported. The active array testing will...mechanical performance, so trades could be used to develop the most promising configuration. This involved evaluating coupons to understand the

  12. Investigation of electronic band structure and charge transfer mechanism of oxidized three-dimensional graphene as metal-free anodes material for dye sensitized solar cell application

    NASA Astrophysics Data System (ADS)

    Loeblein, Manuela; Bruno, Annalisa; Loh, G. C.; Bolker, Asaf; Saguy, Cecile; Antila, Liisa; Tsang, Siu Hon; Teo, Edwin Hang Tong

    2017-10-01

    Dye-sensitized solar cells (DSSCs) offer an optimal trade-off between conversion-efficiency and low-cost fabrication. However, since all its electrodes need to fulfill stringent work-function requirements, its materials have remained unchanged since DSSC's first report early-90s. Here we describe a new material, oxidized-three-dimensional-graphene (o-3D-C), with a band gap of 0.2 eV and suitable electronic band-structure as alternative metal-free material for DSSCs-anodes. o-3D-C/dye-complex has a strong chemical bonding via carboxylic-group chemisorption with full saturation after 12 sec at capacity of ∼450 mg/g (600x faster and 7x higher than optimized metal surfaces). Furthermore, fluorescence quenching of life-time by 28-35% was measured demonstrating charge-transfer from dye to o-3D-C.

  13. Single layer lead iodide: computational exploration of structural, electronic and optical properties, strain induced band modulation and the role of spin-orbital-coupling

    NASA Astrophysics Data System (ADS)

    Zhou, Mei; Duan, Wenhui; Chen, Ying; Du, Aijun

    Graphitic like layered materials exhibit intriguing electronic structures and the search for new types of two-dimensional (2D) monolayer materials is of great interest for developing novel nano-devices. By using density functional theory method, we investigate the structure, stability, electronic and optical properties of monolayer lead iodide (PbI2) . The stability of PbI2 monolayer is first confirmed by phonon dispersion calculation. Compared to the calculation using generalized gradient approximation, screened hybrid functional and spin-orbit coupling effects can predicts an accurate band gap (2.63 eV). The biaxial strain can tune its band gap size in a wide range from 1 eV to 3 eV, which can be understood by the strain induced uniformly change of electric field between Pb and I atomic layer. The calculated imaginary part of the dielectric function of 2D graphene/PbI2 van der Waals type hetero-structure shows significant red shift of absorption edge compared to that of a pure monolayer PbI2. Our findings highlight a new interesting 2D material with potential applications in nanoelectronics and optoelectronics.

  14. Shape of impurity electronic absorption bands in nematic liquid crystal

    SciTech Connect

    Aver`yanov, E.M.

    1994-11-01

    The impurity-matrix anisotropic static intermolecular interactions, orientation-statistical properties, and electronic structure of uniaxial impurity molecules are shown to have a significant influence on spectral moments of the electronic absorption bands of impurities in the nematic liquid crystal. 14 refs., 3 figs.

  15. Band structures in 101Pd

    NASA Astrophysics Data System (ADS)

    Singh, V.; Sihotra, S.; Bhat, G. H.; Sheikh, J. A.; Kaur, M.; Kumar, S.; Singh, K.; Goswamy, J.; Saha, S.; Sethi, J.; Palit, R.; Malik, S. S.; Singh, N.; Garg, U.; Mehta, D.

    2017-06-01

    Excited states in the 101Pd nucleus were investigated through the 75As(31P,2 p 3 n ) fusion-evaporation reaction at Elab=125 MeV by using the Indian National Gamma Array spectrometer equipped with 21 clover Ge detectors. The level scheme is considerably extended for medium spin values. New positive-parity band structures in 101Pd have been studied within the framework of the projected shell model and are found to undergo transition from single quasiparticle to high-K three quasiparticle configuration after band crossing, i.e., from principal-axis rotation to tilted-axis rotation. The negative-parity band structures are discussed in the framework of the hybrid version of tilted-axis cranking shell model calculations. The observed alignment gain in the lowest excited ν h11 /2 negative-parity band results from successive (νg7 /2) 2 and (πg9 /2) 2 pair alignments. The higher excited negative-parity bands are reproduced for the ν [h11 /2(g7/2/d5 /2) 2] and (πg9 /2) -2⊗ν h11 /2 configurations.

  16. Structural, electronic structure, and band alignment properties at epitaxial NiO/Al{sub 2}O{sub 3} heterojunction evaluated from synchrotron based X-ray techniques

    SciTech Connect

    Singh, S. D. Das, Arijeet; Ajimsha, R. S.; Upadhyay, Anuj; Kamparath, Rajiv; Mukherjee, C.; Misra, P.; Rai, S. K.; Sinha, A. K.; Ganguli, Tapas; Nand, Mangla; Jha, S. N.; Shukla, D. K.; Phase, D. M.

    2016-04-28

    The valence band offset value of 2.3 ± 0.2 eV at epitaxial NiO/Al{sub 2}O{sub 3} heterojunction is determined from photoelectron spectroscopy experiments. Pulsed laser deposited thin film of NiO on Al{sub 2}O{sub 3} substrate is epitaxially grown along [111] direction with two domain structures, which are in-plane rotated by 60° with respect to each other. Observation of Pendellosung oscillations around Bragg peak confirms high interfacial and crystalline quality of NiO layer deposited on Al{sub 2}O{sub 3} substrate. Surface related feature in Ni 2p{sub 3/2} core level spectra along with oxygen K-edge soft X-ray absorption spectroscopy results indicates that the initial growth of NiO on Al{sub 2}O{sub 3} substrate is in the form of islands, which merge to form NiO layer for the larger coverage. The value of conduction band offset is also evaluated from the measured values of band gaps of NiO and Al{sub 2}O{sub 3} layers. A type-I band alignment at NiO and Al{sub 2}O{sub 3} heterojunction is also obtained. The determined values of band offsets can be useful in heterojunction based light emitting devices.

  17. Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques

    NASA Astrophysics Data System (ADS)

    Singh, S. D.; Nand, Mangla; Das, Arijeet; Ajimsha, R. S.; Upadhyay, Anuj; Kamparath, Rajiv; Shukla, D. K.; Mukherjee, C.; Misra, P.; Rai, S. K.; Sinha, A. K.; Jha, S. N.; Phase, D. M.; Ganguli, Tapas

    2016-04-01

    The valence band offset value of 2.3 ± 0.2 eV at epitaxial NiO/Al2O3 heterojunction is determined from photoelectron spectroscopy experiments. Pulsed laser deposited thin film of NiO on Al2O3 substrate is epitaxially grown along [111] direction with two domain structures, which are in-plane rotated by 60° with respect to each other. Observation of Pendellosung oscillations around Bragg peak confirms high interfacial and crystalline quality of NiO layer deposited on Al2O3 substrate. Surface related feature in Ni 2p3/2 core level spectra along with oxygen K-edge soft X-ray absorption spectroscopy results indicates that the initial growth of NiO on Al2O3 substrate is in the form of islands, which merge to form NiO layer for the larger coverage. The value of conduction band offset is also evaluated from the measured values of band gaps of NiO and Al2O3 layers. A type-I band alignment at NiO and Al2O3 heterojunction is also obtained. The determined values of band offsets can be useful in heterojunction based light emitting devices.

  18. Electronic band structure and Fermi surfaces of the quasi-two-dimensional monophosphate tungsten bronze, P4W12O44

    NASA Astrophysics Data System (ADS)

    Paul, S.; Ghosh, A.; Sato, T.; Sarma, D. D.; Takahashi, T.; Wang, E.; Greenblatt, M.; Raj, S.

    2014-02-01

    The electronic structure of quasi-two-dimensional monophosphate tungsten bronze, P4W12O44, has been investigated by high-resolution angle-resolved photoemission spectroscopy and density functional theoretical calculations. Experimental electron-like bands around \\Gamma point and Fermi surfaces have similar shapes as predicted by calculations. Fermi surface mapping at different temperatures shows a depletion of density of states at low temperature in certain flat portions of the Fermi surfaces. These flat portions of the Fermi surfaces satisfy the partial nesting condition with incommensurate nesting vectors q_1 and q_2 , which leads to the formation of charge density waves in this phosphate tungsten bronzes. The setting up of charge density wave in these bronzes can well explain the anomaly observed in its transport properties.

  19. Single layer lead iodide: computational exploration of structural, electronic and optical properties, strain induced band modulation and the role of spin-orbital-coupling

    NASA Astrophysics Data System (ADS)

    Zhou, Mei; Duan, Wenhui; Chen, Ying; Du, Aijun

    2015-09-01

    Graphitic like layered materials exhibit intriguing electronic structures and thus the search for new types of two-dimensional (2D) monolayer materials is of great interest for developing novel nano-devices. By using density functional theory (DFT) method, here we for the first time investigate the structure, stability, electronic and optical properties of monolayer lead iodide (PbI2). The stability of PbI2 monolayer is first confirmed by phonon dispersion calculation. Compared to the calculation using generalized gradient approximation, screened hybrid functional and spin-orbit coupling effects can not only predicts an accurate bandgap (2.63 eV), but also the correct position of valence and conduction band edges. The biaxial strain can tune its bandgap size in a wide range from 1 eV to 3 eV, which can be understood by the strain induced uniformly change of electric field between Pb and I atomic layer. The calculated imaginary part of the dielectric function of 2D graphene/PbI2 van der Waals type hetero-structure shows significant red shift of absorption edge compared to that of a pure monolayer PbI2. Our findings highlight a new interesting 2D material with potential applications in nanoelectronics and optoelectronics.Graphitic like layered materials exhibit intriguing electronic structures and thus the search for new types of two-dimensional (2D) monolayer materials is of great interest for developing novel nano-devices. By using density functional theory (DFT) method, here we for the first time investigate the structure, stability, electronic and optical properties of monolayer lead iodide (PbI2). The stability of PbI2 monolayer is first confirmed by phonon dispersion calculation. Compared to the calculation using generalized gradient approximation, screened hybrid functional and spin-orbit coupling effects can not only predicts an accurate bandgap (2.63 eV), but also the correct position of valence and conduction band edges. The biaxial strain can tune its

  20. Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects

    SciTech Connect

    Robins, Lawrence H.; Bertness, Kris A.; Barker, Joy M.; Sanford, Norman A.; Schlager, John B.

    2007-06-01

    GaN nanowires with diameters of 50-250 nm, grown by catalyst-free molecular beam epitaxy, were characterized by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy at temperatures from 3 to 297 K. Both as-grown samples and dispersions of the nanowires onto other substrates were examined. The properties of the near-band-edge PL and CL spectra were discussed in Part I of this study by [Robins et al. [L. H. Robins, K. A. Bertness, J. M. Barker, N. A. Sanford, and J. B. Schlager, J. Appl. Phys. 101,113505 (2007)]. Spectral features below the band gap, and the effect of extended electron irradiation on the CL, are discussed in Part II. The observed sub-band-gap PL and CL peaks are identified as phonon replicas of the free-exciton transitions, or excitons bound to structural defects or surface states. The defect-related peaks in the nanowires are correlated with luminescence lines previously reported in GaN films, denoted the Y lines [M. A. Reshchikov and H. Morkoc, J. Appl. Phys. 97, 061301 (2005)]. The CL was partially quenched by electron beam irradiation for an extended time; the quenching was stronger for the free and shallow-donor-bound exciton peaks than for the defect-related peaks. The quenching appeared to saturate at high irradiation dose (with final intensity {approx_equal}30% of initial intensity) and was reversible on thermal cycling to room temperature. The electron irradiation-induced quenching of the CL is ascribed to charge injection and trapping phenomena.

  1. Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects

    NASA Astrophysics Data System (ADS)

    Robins, Lawrence H.; Bertness, Kris A.; Barker, Joy M.; Sanford, Norman A.; Schlager, John B.

    2007-06-01

    GaN nanowires with diameters of 50-250 nm, grown by catalyst-free molecular beam epitaxy, were characterized by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy at temperatures from 3 to 297 K. Both as-grown samples and dispersions of the nanowires onto other substrates were examined. The properties of the near-band-edge PL and CL spectra were discussed in Part I of this study by [Robins et al. [L. H. Robins, K. A. Bertness, J. M. Barker, N. A. Sanford, and J. B. Schlager, J. Appl. Phys. 101,113505 (2007)]. Spectral features below the band gap, and the effect of extended electron irradiation on the CL, are discussed in Part II. The observed sub-band-gap PL and CL peaks are identified as phonon replicas of the free-exciton transitions, or excitons bound to structural defects or surface states. The defect-related peaks in the nanowires are correlated with luminescence lines previously reported in GaN films, denoted the Y lines [M. A. Reshchikov and H. Morkoc, J. Appl. Phys. 97, 061301 (2005)]. The CL was partially quenched by electron beam irradiation for an extended time; the quenching was stronger for the free and shallow-donor-bound exciton peaks than for the defect-related peaks. The quenching appeared to saturate at high irradiation dose (with final intensity ≈30% of initial intensity) and was reversible on thermal cycling to room temperature. The electron irradiation-induced quenching of the CL is ascribed to charge injection and trapping phenomena.

  2. Systematic study of the effect of HSE functional internal parameters on the electronic structure and band gap of a representative set of metal oxides.

    PubMed

    Viñes, Francesc; Lamiel-García, Oriol; Chul Ko, Kyoung; Yong Lee, Jin; Illas, Francesc

    2017-04-30

    The effect of the amount of Hartree-Fock mixing parameter (α) and of the screening parameter (w) defining the range separated HSE type hybrid functional is systematically studied for a series of seven metal oxides: TiO2 , ZrO2 , CuO2 , ZnO, MgO, SnO2 , and SrTiO3 . First, reliable band gap values were determined by comparing the optimal α reproducing the experiment with the inverse of the experimental dielectric constant. Then, the effect of the w in the HSE functional on the calculated band gap was explored in detail. Results evidence the existence of a virtually infinite number of combinations of the two parameters which are able to reproduce the experimental band gap, without a unique pair able to describe the full studied set of materials. Nevertheless, the results point out the possibility of describing the electronic structure of these materials through a functional including a screened HF exchange and an appropriate correlation contribution. © 2017 Wiley Periodicals, Inc.

  3. Effect of standard deviation, strength of magnetic field and electron density on the photonic band gap of an extrinsic disorder plasma photonic structure

    NASA Astrophysics Data System (ADS)

    Nayak, Chittaranjan; Aghajamali, Alireza; Scotognella, Francesco; Saha, Ardhendu

    2017-10-01

    Transmission properties of electromagnetic waves within microwave region of the one-dimensional random extrinsic plasma photonic crystals were computed using the transfer matrix method. The layers thicknesses of the extrinsic random photonic structure follow a Gaussian distribution. Compared with the periodic extrinsic photonic crystal, wider photonic band gaps (PBGs) were found in case of random extrinsic plasma photonic crystals with few resonant peaks. The PBGs are much wider while the randomness was increased and the number and the strength of resonant peaks were enhanced. The above observations were confirmed through analysis of histogram of normalized average transmissions for four different values of standard deviation with one thousand random samples for each group. The normalized average transmission was controlled by changing the strength of external magnetic field and the electron density of magnetized cold plasma. These features of disordered extrinsic plasma photonic structures would have potential applications such as omnidirectional reflectors and random multichannel filters with lower and higher rate of disorder.

  4. Mn Doping Effects on the Electronic Band Structure of PbS Quantum Dot Thin Films: A Scanning Tunneling Microscopy Analysis

    NASA Astrophysics Data System (ADS)

    Yost, Andrew J.; Rimal, Gaurab; Tang, Jinke; Chien, Teyu

    A thorough understanding of the phenomena associated with doping of transition metals in semiconductors is important for the development of semiconducting electronic technologies such as semiconducting quantum dot sensitized solar cells (QDSSC). Manganese doping is of particular interest in a PbS QD as it is potentially capable of increasing overall QDSSC performance. Here we present scanning tunneling microscopy and spectroscopy studies about the effects of Manganese doping on the energy band structures of PbS semiconducting QD thin films, grown using pulsed laser deposition. As a result of Manganese doping in the PbS QD thin films, a widening of the electronic band gap was observed, which is responsible for the observed increase in resistivity. Furthermore, a loss of long range periodicity observed by XRD, upon incorporation of Manganese, indicates that the Manganese dopants also induce a large amount of grain boundaries. This work was supported by the following: U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Science and Engineering, DEFG02-10ER46728 and the National Science Foundation Grant #0948027.

  5. Characterization of Structural Defects in Wide Band-Gap Compound Materials for Semiconductor and Opto-Electronic Applications

    NASA Astrophysics Data System (ADS)

    Goue, Ouloide Yannick

    Single crystals of binary and ternary compounds are touted to replace silicon for specialized applications in the semiconductor industry. However, the relative high density of structural defects in those crystals has hampered the performance of devices built on them. In order to enhance the performance of those devices, structurally perfect single crystals must be grown. The aim of this thesis is to investigate the interplay between crystal growth process and crystal quality as well as structural defect types and transport property. To this end, the thesis is divided into two parts. The first part provides a general review of the theory of crystal growth (chapter I), an introduction to the materials being investigated (chapter II and III) and the characterization techniques being used (chapter IV). • In chapter I, a brief description of the theory of crystal growth is provided with an eye towards the driving force behind crystal nucleation and growth along with the kinetic factors affecting crystal growth. The case of crystal growth of silicon carbide (SiC) by physical vapor transport (PVT) and chemical vapor deposition (CVD) is discussed. The Bridgman, travelling heater method (THM) and physical transport growth of cadmium zinc telluride (CZT) is also treated. In chapters II and III, we introduce the compound materials being investigated in this study. While a description of their crystal structure and properties is provided, the issues associated with their growth are discussed. In chapter IV, a description of the characterization techniques used in these studies is presented. These techniques are synchrotron X-ray topography (SXRT), transmission electron microscopy, transmission infrared microscopy (TIM), micro-Raman spectroscopy (muRS) and light microscopy. Extensive treatment of SXRT technique is also provided. In the second part, the experimental results obtained in the course of these studies are presented and discussed. These results are divided into

  6. Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range

    NASA Astrophysics Data System (ADS)

    Gladysiewicz, M.; Kudrawiec, R.; Wartak, M. S.

    2016-02-01

    The 8-band kp Hamiltonian is applied to calculate electronic band structure and material gain in III-V-Bi quantum wells (QWs) grown on GaSb substrates. We analyzed three Bi-containing QWs (GaSbBi, GaInSbBi, and GaInAsSbBi) and different Bi-free barriers (GaSb and AlGaInAsSb), lattice matched to GaSb. Bi-related changes in the electronic band structure of III-V host incorporated into our formalism are based on recent ab-initio calculations for ternary alloys (III-Ga-Bi and III-In-Bi) [Polak et al., Semicond. Sci. Technol. 30, 094001 (2015)]. When compared to Bi-free QWs, the analyzed Bi-containing structures show much better quantum confinement in the valence band and also larger redshift of material gain peak per percent of compressive strain. For 8 nm thick GaInSb/GaSb QWs, material gain of the transverse electric (TE) mode is predicted at 2.1 μm for the compressive strain of ɛ = 2% (32% In). The gain peak of the TE mode in 8 nm thick GaSbBi/GaSb QW reaches this wavelength for compressive strain of 0.15% that corresponds to about 5% Bi. It has also been shown that replacing In atoms by Bi atoms in GaInSbBi/GaSb QWs while keeping the same compressive strain (ɛ = 2%) in QW region enhances and shifts gain peak significantly to the longer wavelengths. For 8 nm wide GaInSbBi/GaSb QW with 5% Bi, the gain peak is predicted at around 2.6 μm, i.e., is redshifted by about 400 nm compared to Bi-free QW. For 8 nm wide GaInAsSbSb QWs (80% In, 5% Bi, and ɛ = 2%) with proper AlGaInAsSb barriers, it is possible to achieve large material gain even at 4.0 μm.

  7. Elucidating the stop bands of structurally colored systems through recursion

    NASA Astrophysics Data System (ADS)

    Amir, Ariel; Vukusic, Peter

    2013-04-01

    Interference is the source of some of the spectacular colors of animals and plants in nature. In some of these systems, the physical structure consists of an ordered array of layers with alternating high and low refractive indices. This periodicity leads to an optical band structure that is analogous to the electronic band structure encountered in semiconductor physics: specific bands of wavelengths (the stop bands) are perfectly reflected. Here, we present a minimal model for optical band structure in a periodic multilayer structure and solve it using recursion relations. The stop bands emerge in the limit of an infinite number of layers by finding the fixed point of the recursion. We compare to experimental data for various beetles, whose optical structure resembles the proposed model. Thus, using only the phenomenon of interference and the idea of recursion, we are able to elucidate the concept of band structure in the context of the experimentally observed high reflectance and iridescent appearance of structurally colored beetles.

  8. Band structure in 113Sn

    NASA Astrophysics Data System (ADS)

    Banerjee, P.; Ganguly, S.; Pradhan, M. K.; Sharma, H. P.; Muralithar, S.; Singh, R. P.; Bhowmik, R. K.

    2016-07-01

    The structure of collective bands in 113Sn, populated in the reaction 100Mo(19F,p 5 n ) at a beam energy of 105 MeV, has been studied. A new positive-parity sequence of eight states extending up to 7764.9 keV and spin (39 /2+) has been observed. The band is explained as arising from the coupling of the odd valence neutron in the g7 /2 or the d5 /2 orbital to the deformed 2p-2h proton configuration of the neighboring even-A Sn isotope. Lifetimes of six states up to an excitation energy of 9934.9 keV and spin 47 /2-belonging to a Δ I =2 intruder band have been measured for the first time, including an upper limit for the last state, from Doppler-shift-attenuation data. A moderate average quadrupole deformation β2=0.22 ±0.02 is deduced from these results for the five states up to spin 43 /2- . The transition quadrupole moments decrease with increase in rotational frequency, indicating a reduction of collectivity with spin, a feature common for terminating bands. The behavior of the kinematic and dynamic moments of inertia as a function of rotational frequency has been studied and total Routhian surface calculations have been performed in an attempt to obtain an insight into the nature of the states near termination.

  9. X-ray characterization, electronic band structure, and thermoelectric properties of the cluster compound Ag2Tl2Mo9Se11.

    PubMed

    Al Rahal Al Orabi, Rabih; Gougeon, Patrick; Gall, Philippe; Fontaine, Bruno; Gautier, Régis; Colin, Malika; Candolfi, Christophe; Dauscher, Anne; Hejtmanek, Jiri; Malaman, Bernard; Lenoir, Bertrand

    2014-11-03

    We report on a detailed investigation of the crystal and electronic band structures and of the transport and thermodynamic properties of the Mo-based cluster compound Ag2Tl2Mo9Se11. This novel structure type crystallizes in the trigonal space group R3̅c and is built of a three-dimensional network of interconnected Mo9Se11 units. Single-crystal X-ray diffraction indicates that the Ag and Tl atoms are distributed in the voids of the cluster framework, both of which show unusually large anisotropic thermal ellipsoids indicative of strong local disorder. First-principles calculations show a weakly dispersive band structure around the Fermi level as well as a semiconducting ground state. The former feature naturally explains the presence of both hole-like and electron-like signals observed in Hall effect. Of particular interest is the very low thermal conductivity that remains quasi-constant between 150 and 800 K at a value of approximately 0.6 W·m(-1)·K(-1). The lattice thermal conductivity is close to its minimum possible value, that is, in a regime where the phonon mean free path nears the mean interatomic distance. Such extremely low values likely originate from the disorder induced by the Ag and Tl atoms giving rise to strong anharmonicity of the lattice vibrations. The strongly limited ability of this compound to transport heat is the key feature that leads to a dimensionless thermoelectric figure of merit ZT of 0.6 at 800 K.

  10. Li induced effects in the core level and π-band electronic structure of graphene grown on C-face SiC

    SciTech Connect

    Johansson, Leif I. Xia, Chao; Virojanadara, Chariya

    2015-11-15

    Studies of the effects induced in the electronic structure after Li deposition, and subsequent heating, on graphene samples prepared on C-face SiC are reported. The as prepared graphene samples are essentially undoped, but after Li deposition, the Dirac point shifts down to 1.2 eV below the Fermi level due to electron doping. The shape of the C 1s level also indicates a doping concentration of around 10{sup 14 }cm{sup −2} after Li deposition, when compared with recent calculated results of core level spectra of graphene. The C 1s, Si 2p, and Li 1s core level results show little intercalation directly after deposition but that most of the Li has intercalated after heating at 280 °C. Heating at higher temperatures leads to desorption of Li from the sample, and at 1030 °C, Li can no longer be detected on the sample. The single π-band observable from multilayer C-face graphene samples in conventional angle resolved photoelectron spectroscopy is reasonably sharp both on the initially prepared sample and after Li deposition. After heating at 280 °C, the π-band appears more diffuse and possibly split. The Dirac point becomes located at 0.4 eV below the Fermi level, which indicates occurrence of a significant reduction in the electron doping concentration. Constant energy photoelectron distribution patterns extracted from the as prepared graphene C-face sample and also after Li deposition and heating at 280 °C look very similar to earlier calculated distribution patterns for monolayer graphene.

  11. Electronic and crystalline structures of zero band-gap LuPdBi thin films grown epitaxially on MgO(100)

    SciTech Connect

    Shan, Rong; Ouardi, Siham; Fecher, Gerhard H.; ViolBarbosa, Carlos E.; Felser, Claudia; Gao, Li; Kellock, Andrew; Roche, Kevin P.; Samant, Mahesh G.; Parkin, Stuart S. P.; Ikenaga, Eiji

    2013-04-29

    Thin films of the proposed topological insulator LuPdBi-a Heusler compound with the C1{sub b} structure-were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi{sub 2} and Lu targets. Epitaxial growth of LuPdBi films was confirmed by X-ray diffraction and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, even though the films were deposited at high temperature. The film composition is close to the ideal stoichiometric ratio. The valence band spectra of the LuPdBi films, observed by hard X-ray photoelectron spectroscopy, correspond very well with the ab initio-calculated density of states.

  12. Syntheses, structure, some band gaps, and electronic structures of CsLnZnTe3 (Ln=La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Y).

    PubMed

    Yao, Jiyong; Deng, Bin; Sherry, Leif J; McFarland, Adam D; Ellis, Donald E; Van Duyne, Richard P; Ibers, James A

    2004-11-29

    Eleven new quaternary rare-earth tellurides, CsLnZnTe3 (Ln=La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Y), were prepared from solid-state reactions at 1123 K. These isostructural materials crystallize in the layered KZrCuS3 structure type in the orthorhombic space group Cmcm. The structure is composed of LnTe6 octahedra and ZnTe4 tetrahedra that share edges to form [LnZnTe3] layers. These layers stack perpendicular to [010] and are separated by layers of face- and edge-sharing CsTe8 bicapped trigonal prisms. There are no Te-Te bonds in the structure of these CsLnZnTe3 compounds so the formal oxidation states of Cs/Ln/Zn/Te are 1+/3+/2+/2-. Optical band gaps of 2.13 eV for CsGdZnTe3 and 2.12 eV for CsTbZnTe3 were deduced from single-crystal optical absorption measurements. A first-principles calculation of the density of states and the frequency-dependent optical properties was performed on CsGdZnTe3. The calculated band gap of 2.1 eV is in good agreement with the experimental value. A quadratic fit for the lanthanide contraction of the Ln-Te distance is superior to a linear one if the closed-shell atom is included.

  13. Electronic structures of bare and terephthalic acid adsorbed TiO2(110)-(1 × 2) reconstructed surfaces: origin and reactivity of the band gap states.

    PubMed

    Zhang, Wenhua; Liu, Liming; Wan, Li; Liu, Lingyun; Cao, Liang; Xu, Faqiang; Zhao, Jin; Wu, Ziyu

    2015-08-21

    Combined core level spectroscopy, valence spectroscopy and density functional theory studies have probed the terephthalic acid (TPA) adsorption behavior and the electronic structure of the rutile TiO2(110)-(1 × 2) reconstructed surface at room temperature. The TiO2(110)-(1 × 2) reconstructed surface exhibits an electron rich nature owing to the unsaturated coordination of the surface terminated Ti2O3 rows. Deprotonation of TPA molecules upon adsorption produces both surface bridging hydroxyl (ObH) and bidentate terephthalate species with a saturation coverage of nearly 0.5 monolayers (ML). In contrast to the TiO2(110)-(1 × 1) surface, the band gap states (BGSs) on the bare (1 × 2) surface exhibit an asymmetric spectral feature, which is originated from integrated contributions of the Ti2O3 termination and the defects in the near-surface region. The Ti2O3 originated BGSs are found to be highly sensitive to the TPA adsorption, a phenomenon well reproduced by the density functional theory (DFT) calculations. Theoretical simulations of the adsorption process also suggest that the redistribution of the electronic density on the (1 × 2) reconstructed surface accompanying the hydroxyl formation promotes the disappearance of the Ti2O3-row derived BGS.

  14. Correlation effects of π electrons on the band structures of conjugated polymers using the self-consistent GW approximation with vertex corrections.

    PubMed

    Chang, Yao-Wen; Jin, Bih-Yaw

    2012-01-14

    Many-body perturbation theory is used to investigate the effect of π-electron correlations on the quasi-particle band structures of conjugated polymers at the level of the Pariser-Parr-Pople model. The self-consistent GW approximation with vertex corrections to both the self-energy and the polarization in Hedin's equations is employed in order to eliminate self-interaction errors and include the effects of electron-hole attraction in screening processes. The dynamic inverse dielectric function is constructed from the generalized plasmon-pole approximation with the static dressed polarization given by the coupled-perturbed Hartree-Fock equation. The bandgaps of trans-polyacetylene, trans-polyphenylenevinylene and poly(para)phenylene are calculated by both the Hartree-Fock and GW approximation, and a lowering of bandgaps due to electron correlations is found. We conclude that both dielectric screening and vertex corrections are important for calculating the quasi-particle bandgaps of conjugated polymers.

  15. Elucidation of electronic structure by the analysis of hyperfine interactions: The MnH A 7Π-X 7Sigma + (0,0) band

    NASA Astrophysics Data System (ADS)

    Varberg, Thomas D.; Field, Robert W.; Merer, Anthony J.

    1991-08-01

    We present a complete analysis of the hyperfine structure of the MnH A 7Π-X 7Σ+ (0,0) band near 5680 Å, studied with sub-Doppler resolution by intermodulated fluorescence spectroscopy. Magnetic hyperfine interactions involving both the 55Mn (I=5/2) and 1H (I=1/2) nuclear spins are observed as well as 55Mn electric quadrupole effects. The manganese Fermi contact interaction in the X 7Σ+ state is the dominant contributor to the observed hyperfine splittings; the ΔF=0, ΔN=0, ΔJ=±1 matrix elements of this interaction mix the electron spin components of the ground state quite strongly at low N, destroying the ``goodness'' of J as a quantum number and inducing rotationally forbidden, ΔJ=±2 and ±3 transitions. The hyperfine splittings of over 50 rotational transitions covering all 7 spin components of both states were analyzed and fitted by least squares, allowing the accurate determination of 14 different hyperfine parameters. Using single electronic configurations to describe the A 7Π and X 7Σ+ states and Herman-Skillman atomic radial wave functions to represent the molecular orbitals, we calculated a priori values for the 55Mn and 1H hyperfine parameters which agree closely with experiment. We show that the five high-spin coupled Mn 3d electrons do not contribute to the manganese hyperfine structure but are responsible for the observed proton magnetic dipolar couplings. Furthermore, the results suggest that the Mn 3d electrons are not significantly involved in bonding and demonstrate that the molecular hyperfine interactions may be quantitatively understood using simple physical interpretations.

  16. Electron paramagnetic resonance of conduction-band electrons in silicon

    NASA Astrophysics Data System (ADS)

    Young, C. F.; Poindexter, E. H.; Gerardi, G. J.; Warren, W. L.; Keeble, D. J.

    1997-06-01

    The g value of conduction-band electrons in silicon was properly determined by using electron paramagnetic resonance. A linear empirical relationship was first found between the g values and the thermal ionization energies of several well-known group-V substitutional shallow donors in silicon. An extrapolation of the empirical relation to zero ionization energy predicted the g value of conduction-band (CB) electrons, gCB=1.9995, which is slightly but definitely different from that of conduction electrons in the donor-impurity band of degenerate n-type silicon; although both g values have been tacitly accepted to be identical for nearly four decades. The prediction was directly verified by measuring the g value of CB electrons created either by thermal emission from shallow donors in phosphorus-doped silicon at T=125 K and by above-band-gap optical excitation in high-purity p-type silicon at T=3.5 K; the measured g value in both experiments was precisely gCB=1.9995(1). The empirical relation is still not theoretically explained.

  17. Topological structure of the inter-band phase difference soliton in two-band superconductivity

    NASA Astrophysics Data System (ADS)

    Tanaka, Y.; Iyo, A.; Tokiwa, K.; Watanabe, T.; Crisan, A.; Sundaresan, A.; Terada, N.

    2010-11-01

    Two-component superconductivity based on the two-band superconductor has a functional topology such as an inter-band phase difference soliton (i-soliton) to realize topological electronics (topolonics). Many gauge field theories are applied to investigate the topology of two-band superconductivity. To ease experimental and electronics applications, these theories should be refined. Weinberg-Salam theory and SU(2) (two-dimensional special unitary symmetry) gauge field theory are proper starting points. An effective extra force field because of the crystal structure and inter-band Josephson interaction, rather than spontaneous symmetry breaking, simplifies the conventional gauge field theory.

  18. Electronic structure of tin monosulfide

    NASA Astrophysics Data System (ADS)

    Bletskan, D. I.; Bletskan, M. M.; Glukhov, K. E.

    2017-01-01

    The band structure of three-dimensional and two-dimensional tin monosulfide was calculated by the density functional method in LDA and LDA+U approximations. Group-theoretical analysis of the electronic band structure of SnS crystallized in the orthorhombic structure with space group D2h16- Pcmn is carried out, the symmetry of wave functions of the valence band and the bottom of the conduction band is found. The selection rules for direct and indirect optical transitions at different incident light polarization are determined. The group-theoretical analysis of energy states of the three-dimensional and two-dimensional SnS structures explains the formation of the band structure including the Davydov splitting. The calculated total density of states is compared with the known experimental XPS and UPS spectra, providing the assignment of their main features.

  19. Electronic structure of the conduction band of the interface region of ultrathin films of substituted perylenedicarboximides and the germanium oxide surface

    NASA Astrophysics Data System (ADS)

    Komolov, A. S.; Lazneva, E. F.; Gerasimova, N. B.; Panina, Yu. A.; Baramygin, A. V.; Pshenichnyuk, S. A.

    2016-09-01

    The results of the investigation of the electronic structure of the conduction band and the interfacial potential barrier during the formation of interfaces of dioctyl-substituted perylenedicarboximide (PTCDI-C8) and diphenyl-substituted perylenedicarboximide (PTCDI-Ph) ultrathin films with the oxidized germanium surface have been presented. The experimental results have been obtained using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode at energies in the range from 5 to 20 eV above the Fermi level E F. The positions of the maxima of the fine structure of total current spectra (FSTCS) of the PTCDI-C8 and PTCDI-Ph films differ significantly in the energy range from 9 to 20 eV above the Fermi level E F, which can be associated with the difference between the substituents of the chosen molecules, dioctyl- and diphenyl-, respectively. At the same time, the positions of the lowenergy maxima in the FSTCS spectra at an energy 6-7 eV above the Fermi level E F for the PTCDI-C8 and PTCDI-Ph films almost coincide with each other. It has been suggested that these maxima are attributed to the electronic states of the perylene core of the molecules under investigation. The process of the formation of interfacial potential barriers of the PTCDI-C8 and PTCDI-Ph films with the oxidized germanium surface has been analyzed. It has been found that the work functions of the surface, E vac- E F, differ little from 4.6 ± 0.1 eV over the entire range of organic coating thicknesses from 0 to 6 nm.

  20. Theoretical electronic structure of structurally modified graphene

    NASA Astrophysics Data System (ADS)

    Dvorak, Marc David

    Graphene has emerged as a promising replacement for silicon in next-generation electronics and optoelectronic devices. If graphene is to be used in semiconductor devices, however, it must acquire an electronic band gap. Numerous approaches have been proposed to control the band gap of graphene, including the periodic patterning of defects. However, the mechanism for band gap opening and the associated physics in graphene patterned with defects remain unclear. Using both analytic theory and first-principles calculations, we show that periodic patterning of defects on graphene can open a large and tunable band gap, induce strong absorption peaks at optical wavelengths, and host a giant band gap quantum spin Hall phase. First, a geometric rule is analytically derived for the arrangements of defects that open a band gap in graphene, with one ninth of all possible patterns opening a band gap. Next, we perform ab-initio density functional calculations to compare the effects of structural vacancies, hexagonal BN dopants, and passivants on the electronic structure of graphene. Qualitatively, these three types of structural defects behave the same, with only slight differences in their resulting band structures. By adjusting the shape of structural defects, we show how to move the Dirac cones in reciprocal space in accordance with the tight-binding model for the anisotropic honeycomb lattice, while the fundamental mechanism for band gap opening remains the same. To quantitatively predict the band gap and optical properties of these materials, we employ many-body perturbation theory with Green's functions (GW/Bethe-Salpeter equation) to directly include electron-electron and electron-hole interactions. Structurally modified graphene shows a strong renormalization of the fundamental band gap over single particle descriptions, and a strong electron-hole interaction as indicated by strong exciton binding energies (> 0.5 eV). Finally, we show that structurally modified graphene

  1. Band structure of the growth rate of the two-stream instability of an electron beam propagating in a bounded plasma

    DOE PAGES

    Kaganovich, I. D.; Sydorenko, D.

    2016-11-18

    Our paper presents a study of the two-stream instability of an electron beam propagating in a finite-size plasma placed between two electrodes. It is shown that the growth rate in such a system is much smaller than that of an infinite plasma or a finite size plasma with periodic boundary conditions. Even if the width of the plasma matches the resonance condition for a standing wave, a spatially growing wave is excited instead with the growth rate small compared to that of the standing wave in a periodic system. Furthermore, the approximate expression for this growth rate is γ≈(1/13)ωpe(nb/np)(Lωpe/vb)ln(Lωpe/vb)[1-0.18 cosmore » (Lωpe/vb+π/2)], where ωpe is the electron plasma frequency, nb and np are the beam and the plasma densities, respectively, vb is the beam velocity, and L is the plasma width. The frequency, wave number, and the spatial and temporal growth rates, as functions of the plasma size, exhibit band structure. Finally, the amplitude of saturation of the instability depends on the system length, not on the beam current. For short systems, the amplitude may exceed values predicted for infinite plasmas by more than an order of magnitude.« less

  2. Band structure of the growth rate of the two-stream instability of an electron beam propagating in a bounded plasma

    SciTech Connect

    Kaganovich, I. D.; Sydorenko, D.

    2016-11-18

    Our paper presents a study of the two-stream instability of an electron beam propagating in a finite-size plasma placed between two electrodes. It is shown that the growth rate in such a system is much smaller than that of an infinite plasma or a finite size plasma with periodic boundary conditions. Even if the width of the plasma matches the resonance condition for a standing wave, a spatially growing wave is excited instead with the growth rate small compared to that of the standing wave in a periodic system. Furthermore, the approximate expression for this growth rate is γ≈(1/13)ωpe(nb/np)(Lωpe/vb)ln(Lωpe/vb)[1-0.18 cos (Lωpe/vb+π/2)], where ωpe is the electron plasma frequency, nb and np are the beam and the plasma densities, respectively, vb is the beam velocity, and L is the plasma width. The frequency, wave number, and the spatial and temporal growth rates, as functions of the plasma size, exhibit band structure. Finally, the amplitude of saturation of the instability depends on the system length, not on the beam current. For short systems, the amplitude may exceed values predicted for infinite plasmas by more than an order of magnitude.

  3. Band structure of the growth rate of the two-stream instability of an electron beam propagating in a bounded plasma

    NASA Astrophysics Data System (ADS)

    Kaganovich, I. D.; Sydorenko, D.

    2016-11-01

    This paper presents a study of the two-stream instability of an electron beam propagating in a finite-size plasma placed between two electrodes. It is shown that the growth rate in such a system is much smaller than that of an infinite plasma or a finite size plasma with periodic boundary conditions. Even if the width of the plasma matches the resonance condition for a standing wave, a spatially growing wave is excited instead with the growth rate small compared to that of the standing wave in a periodic system. The approximate expression for this growth rate is γ≈(1 /13 )ωpe(nb/np)(L ωpe/vb)ln (L ωpe/vb)[1 -0.18 cos (L ωpe/vb+π/2 ) ] , where ωpe is the electron plasma frequency, nb and np are the beam and the plasma densities, respectively, vb is the beam velocity, and L is the plasma width. The frequency, wave number, and the spatial and temporal growth rates, as functions of the plasma size, exhibit band structure. The amplitude of saturation of the instability depends on the system length, not on the beam current. For short systems, the amplitude may exceed values predicted for infinite plasmas by more than an order of magnitude.

  4. First-principle calculation of the elastic, band structure, electronic states, and optical properties of Cu-doped ZnS nanolayers

    NASA Astrophysics Data System (ADS)

    Lahiji, Mohammadreza Askaripour; Ziabari, Ali Abdolahzadeh

    2016-11-01

    The structural, elastic, electronic, and optical properties of undoped and Cu-doped ZnS nanostructured layers have been studied in the zincblende (ZB) phase, by first-principle approach. Density functional theory (DFT) has been employed to calculate the fundamental properties of the layers using full-potential linearized augmented plane-wave (FPLAPW) method. Mechanical analysis revealed that the bulk modulus increases with the increase of Cu content. Cu doping was found to reduce the band gap value of the material. In addition, DOS effective mass of the electrons and heavy holes was evaluated. Adding Cu caused the decrement/increment of transmission/reflectance of nanolayers in the UV-vis region. The substitution by Cu increased the intensity of the peaks, and a slight red shift was observed in the absorption peak. Moreover, the static dielectric constant, and static refractive index increased with Cu content. The optical conductivity also followed a similar trend to that of the dielectric constants. Energy loss function of the modeled compounds was also evaluated. All calculated parameters were compared with the available experimental and other theoretical results.

  5. Photonic band gap structure simulator

    DOEpatents

    Chen, Chiping; Shapiro, Michael A.; Smirnova, Evgenya I.; Temkin, Richard J.; Sirigiri, Jagadishwar R.

    2006-10-03

    A system and method for designing photonic band gap structures. The system and method provide a user with the capability to produce a model of a two-dimensional array of conductors corresponding to a unit cell. The model involves a linear equation. Boundary conditions representative of conditions at the boundary of the unit cell are applied to a solution of the Helmholtz equation defined for the unit cell. The linear equation can be approximated by a Hermitian matrix. An eigenvalue of the Helmholtz equation is calculated. One computation approach involves calculating finite differences. The model can include a symmetry element, such as a center of inversion, a rotation axis, and a mirror plane. A graphical user interface is provided for the user's convenience. A display is provided to display to a user the calculated eigenvalue, corresponding to a photonic energy level in the Brilloin zone of the unit cell.

  6. Impurity levels, impurity bands, excited impurity bands, and band tails: The electronic density of states in quantum wells and heterostructures

    NASA Astrophysics Data System (ADS)

    Serre, J.; Ghazali, A.; Gold, A.

    1989-04-01

    We have investigated in quantum wells (QW's) and heterostructures (HS's) the modification of the electronic structure near the band edge, which is induced by selective doping. The density of states has been calculated as a function of the relevant parameters, namely, carrier and impurity concentrations (and depletion concentrations for HS's), QW width, and impurity position. Using a multiple-scattering method which includes a finite-range screened potential and impurity concentration to all orders, we have succeeded in obtaining ground-state and excited-state impurity bands (IB's). We observed these bands merging gradually with the lowest conduction subband as the impurity concentration is increased, leading to the formation of a band tail into the energy gap. Other main results obtained for different values of the parameters are the binding energy for a single impurity, the widths and energy shifts of ground- and excited-state IB's, and the contribution of the electron-impurity interaction to the gap shrinkage in the band-tail regime. Our results are compared with experiments and other theories.

  7. Modification of the electronic band structure of the topological insulator Bi2Te3 by the adsorption of the organic molecule Manganese Phthalocyanine

    NASA Astrophysics Data System (ADS)

    Hewitt, Andrew; Boltersdorf, Jonathon; Maggard, Paul; Dougherty, Daniel

    Topological insulators (TIs) have a spin-textured surface state protected by time-reversal symmetry within a bulk insulating gap. Typical approaches to breaking time-reversal symmetry have been to introduce dilute magnetic impurities into a solid-solution synthesis. Organic molecules offer another route for magnetic-doping of TIs. It has been shown that a coupling may exist, along with a new hybrid-interface state, between the magnetic molecule Manganese Phthalocyanine (MnPc) and the TI Bi2Te3. We report the modification of the electronic band structure by the adsorption of MnPc molecules as measured by ultraviolet photoelectron spectroscopy. We show a new state emerging below the Fermi level at less than a monolayer coverage of MnPc molecules. We also observe an n-doping effect as charge is transferred from the molecule to the TI substrate in agreement with recent work. We suggest that this interface system may have important implications for understanding the role of local time reversal symmetry breaking in TI's and in controlling spin injection into these novel materials.

  8. Valence band electronic structure of Nb2Pd1.2Se5 and Nb2Pd0.95S5 superconductors

    NASA Astrophysics Data System (ADS)

    Lohani, H.; Mishra, P.; Goyal, R.; Awana, V. P. S.; Sekhar, B. R.

    2017-03-01

    We present a comparative study of our valence band photoemission results on Nb2Pd1.2Se5 and Nb2Pd0.95S5 superconductors which are supported by our DFT based electronic structure calculations. We observe that the VB spectra of both the compounds are qualitatively similar, except for some slight differences in the binding energy positions of all the features. This could be due to the unequal electronegativities of Se and S atom. The calculated density of states (DOS) reveals that the VB features are mainly composed of Pd-Se/S hybridized states. The nature of DOS originating from the distinctly coordinated Pd atoms is different. Further, various Pd-4d and Nb-4d states crossing the Fermi level (Ef) signifies the multiband character of these compounds. In addition, we find a temperature dependent pseudogap in Nb2Pd0.95S5 which is absent in Nb2Pd1.2Se5.

  9. Electronic structures of porous nanocarbons

    PubMed Central

    Baskin, Artem; Král, Petr

    2011-01-01

    We use large scale ab-initio calculations to describe electronic structures of graphene, graphene nanoribbons, and carbon nanotubes periodically perforated with nanopores. We disclose common features of these systems and develop a unified picture that permits us to analytically predict and systematically characterize metal-semiconductor transitions in nanocarbons with superlattices of nanopores of different sizes and types. These novel materials with highly tunable band structures have numerous potential applications in electronics, light detection, and molecular sensing. PMID:22355555

  10. Electronic structures of porous nanocarbons.

    PubMed

    Baskin, Artem; Král, Petr

    2011-01-01

    We use large scale ab-initio calculations to describe electronic structures of graphene, graphene nanoribbons, and carbon nanotubes periodically perforated with nanopores. We disclose common features of these systems and develop a unified picture that permits us to analytically predict and systematically characterize metal-semiconductor transitions in nanocarbons with superlattices of nanopores of different sizes and types. These novel materials with highly tunable band structures have numerous potential applications in electronics, light detection, and molecular sensing.

  11. Electronic structures of porous nanocarbons

    NASA Astrophysics Data System (ADS)

    Baskin, Artem; Král, Petr

    2011-07-01

    We use large scale ab-initio calculations to describe electronic structures of graphene, graphene nanoribbons, and carbon nanotubes periodically perforated with nanopores. We disclose common features of these systems and develop a unified picture that permits us to analytically predict and systematically characterize metal-semiconductor transitions in nanocarbons with superlattices of nanopores of different sizes and types. These novel materials with highly tunable band structures have numerous potential applications in electronics, light detection, and molecular sensing.

  12. Electronic structure of spinel-type nitride compounds Si3N4, Ge3N4, and Sn3N4 with tunable band gaps: application to light emitting diodes.

    PubMed

    Boyko, T D; Hunt, A; Zerr, A; Moewes, A

    2013-08-30

    In this Letter using experimental and theoretical methods, we show that the solid solutions of group 14 nitrides having spinel structure (γ-M3N4 where M=Si, Ge, Sn) exhibit mainly direct electronic band gaps with values that span the entire visible wavelength region, making these hard and thermally stable materials suitable for optoelectronic devices and, in particular, lighting applications. Using the simulated band structure, we also calculate the exciton binding energy. The combination of large exciton binding energies and the tunable electronic band gaps in the visible range makes these binary spinel nitrides and their solid solutions a new class of multifunctional materials with optoelectronic properties that can be engineered to suit the desired application.

  13. Band-structure engineering in conjugated 2D polymers.

    PubMed

    Gutzler, Rico

    2016-10-26

    Conjugated polymers find widespread application in (opto)electronic devices, sensing, and as catalysts. Their common one-dimensional structure can be extended into the second dimension to create conjugated planar sheets of covalently linked molecules. Extending π-conjugation into the second dimension unlocks a new class of semiconductive polymers which as a consequence of their unique electronic properties can find usability in numerous applications. In this article the theoretical band structures of a set of conjugated 2D polymers are compared and information on the important characteristics band gap and valence/conduction band dispersion is extracted. The great variance in these characteristics within the investigated set suggests 2D polymers as exciting materials in which band-structure engineering can be used to tailor sheet-like organic materials with desired electronic properties.

  14. V-band electronically reconfigurable metamaterial

    NASA Astrophysics Data System (ADS)

    Radisic, Vesna; Hester, Jimmy G.; Nguyen, Vinh N.; Caira, Nicholas W.; DiMarzio, Donald; Hilgeman, Theodore; Larouche, Stéphane; Kaneshiro, Eric; Gutierrez-Aitken, Augusto

    2017-04-01

    In this work, we report on a reconfigurable V-band metamaterial fabricated using an InP heterojunction bipolar transistor production process. As designed and fabricated, the implementation uses complementary split ring resonators (cSRRs) and Schottky diodes in both single unit cell and three unit cell monolithic microwave integrated circuits. Each unit cell has two diodes embedded within the gaps of the cSRRs. Reconfigurability is achieved by applying an external bias that turns the diodes on and off, which effectively controls the resonant property of the structure. In order to measure the metamaterial properties, the unit cells are fed and followed by transmission lines. Measured data show good agreement with simulations and demonstrate that the metamaterial structure exhibits resonance at around 65 GHz that can be switched on and off. The three-unit cell transmission line metamaterial shows a deeper resonance and a larger phase change than a single cell, as expected. These are the first reported reconfigurable metamaterials operating at the V-band using the InP high speed device fabrication process.

  15. Band-structure parameters by genetic algorithm

    SciTech Connect

    Starrost, F.; Bornholdt, S.; Solterbeck, C.; Schattke, W.

    1996-05-01

    A genetic algorithm has been used to solve a complex multidimensional parameter-fitting problem. We will focus on the parameters of an empirical tight-binding Hamiltonian. The method is used to approximate the electronic energy band structure if energy values are known for a few wave vectors of high symmetry. Compared to the usual manual procedure this method is more accurate and automatic. This approach, based on the extended H{umlt u}ckel theory (EHT), has provided a list of EHT parameters for IV-IV and III-V semiconductors with zinc-blende structure and helped us to find a symmetry in the EHT. {copyright} {ital 1996 The American Physical Society.}

  16. Electronic structure of an [FeFe] hydrogenase model complex in solution revealed by X-ray absorption spectroscopy using narrow-band emission detection.

    PubMed

    Leidel, Nils; Chernev, Petko; Havelius, Kajsa G V; Schwartz, Lennart; Ott, Sascha; Haumann, Michael

    2012-08-29

    High-resolution X-ray absorption spectroscopy with narrow-band X-ray emission detection, supported by density functional theory calculations (XAES-DFT), was used to study a model complex, ([Fe(2)(μ-adt)(CO)(4)(PMe(3))(2)] (1, adt = S-CH(2)-(NCH(2)Ph)-CH(2)-S), of the [FeFe] hydrogenase active site. For 1 in powder material (1(powder)), in MeCN solution (1'), and in its three protonated states (1H, 1Hy, 1HHy; H denotes protonation at the adt-N and Hy protonation of the Fe-Fe bond to form a bridging metal hydride), relations between the molecular structures and the electronic configurations were determined. EXAFS analysis and DFT geometry optimization suggested prevailing rotational isomers in MeCN, which were similar to the crystal structure or exhibited rotation of the (CO) ligands at Fe1 (1(CO), 1Hy(CO)) and in addition of the phenyl ring (1H(CO,Ph), 1HHy(CO,Ph)), leading to an elongated solvent-exposed Fe-Fe bond. Isomer formation, adt-N protonation, and hydride binding caused spectral changes of core-to-valence (pre-edge of the Fe K-shell absorption) and of valence-to-core (Kß(2,5) emission) electronic transitions, and of Kα RIXS data, which were quantitatively reproduced by DFT. The study reveals (1) the composition of molecular orbitals, for example, with dominant Fe-d character, showing variations in symmetry and apparent oxidation state at the two Fe ions and a drop in MO energies by ~1 eV upon each protonation step, (2) the HOMO-LUMO energy gaps, of ~2.3 eV for 1(powder) and ~2.0 eV for 1', and (3) the splitting between iron d(z(2)) and d(x(2)-y(2)) levels of ~0.5 eV for the nonhydride and ~0.9 eV for the hydride states. Good correlations of reduction potentials to LUMO energies and oxidation potentials to HOMO energies were obtained. Two routes of facilitated bridging hydride binding thereby are suggested, involving ligand rotation at Fe1 for 1Hy(CO) or adt-N protonation for 1HHy(CO,Ph). XAES-DFT thus enables verification of the effects of ligand

  17. Experimental Studies of Band-Structure Properties in Bloch Transistors

    NASA Astrophysics Data System (ADS)

    Flees, Daniel J.

    1998-03-01

    One of the most striking features in small SIS tunnel junctions is the energy-band structure produced by Josephson coupling and charging effects. These energy bands are analogous to Bloch bands in crystalline solids. The superconducting single-electron (Bloch) transistor is the simplest system in which the energy bands can be readily studied. It consists of a superconducting island coupled to a source and drain through two small tunnel junctions. The elastic tunneling of Cooper-Pairs onto the island mixes the discrete charge states of the island. The shapes of the resulting energy bands can be modified by changing the electrostatic energies of these charge states with a voltage applied to a capacitively coupled gate. The maximum zero-voltage current (supercurrent) of each band depends upon the shape of the band and so the gate modulates the supercurrent. Each band has a different characteristic supercurrent modulation, with excited bands generally having lower currents. Thus! we can use the reduction in super current associated with a transition to an excited band to begin probing band- structure properties such as the band-gap.(Daniel J. Flees, Siyuan Han, and J.E. Lukens, Phys. Rev. Lett. 78), 4817 (1997).

  18. Electronic band structure and optical gain of GaN{sub x}Bi{sub y}As{sub 1−x−y}/GaAs pyramidal quantum dots

    SciTech Connect

    Song, Zhi-Gang; Bose, Sumanta; Fan, Wei-Jun

    2016-04-14

    The electronic band structure and optical gain of GaN{sub x}Bi{sub y}As{sub 1−x−y}/GaAs pyramidal quantum dots (QDs) are investigated using the 16-band k ⋅ p model with constant strain. The optical gain is calculated taking both homogeneous and inhomogeneous broadenings into consideration. The effective band gap falls as we increase the composition of nitrogen (N) and bismuth (Bi) and with an appropriate choice of composition we can tune the emission wavelength to span within 1.3 μm–1.55 μm, for device application in fiber technology. The extent of this red shift is more profound in QDs compared with bulk material due to quantum confinement. Other factors affecting the emission characteristics include virtual crystal, strain profile, band anticrossing (BAC), and valence band anticrossing (VBAC). The strain profile has a profound impact on the electronic structure, specially the valence band of QDs, which can be determined using the composition distribution of wave functions. All these factors eventually affect the optical gain spectrum. With an increase in QD size, we observe a red shift in the emission energy and emergence of secondary peaks owing to transitions or greater energy compared with the fundamental transition.

  19. Electronic structure of Ca, Sr, and Ba under pressure.

    NASA Technical Reports Server (NTRS)

    Animalu, A. O. E.; Heine, V.; Vasvari, B.

    1967-01-01

    Electronic band structure calculations phase of Ca, Sr and Ba over wide range of atomic volumes under pressure electronic band structure calculations for fcc phase of Ca, Sr and Ba over wide range of atomic volumes under pressure electronic band structure calculations for fcc phase of Ca, Sr and Ba over wide range of atomic volumes under pressure

  20. Controlling the Electronic Structure of Bilayer Graphene

    NASA Astrophysics Data System (ADS)

    Ohta, Taisuke; Bostwick, Aaron; Seyller, Thomas; Horn, Karsten; Rotenberg, Eli

    2006-08-01

    We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands. This control over the band structure suggests the potential application of bilayer graphene to switching functions in atomic-scale electronic devices.

  1. Spectroscopic investigation on the electronic structure of a 5d band insulator SrHfO in proximity to ferroelectric instability: Comparison with SrTiO and SrZrO

    NASA Astrophysics Data System (ADS)

    Lee, D. J.; Seo, Y. K.; Lee, Y. S.; Noh, H.-J.

    2010-02-01

    We investigated the high-energy electronic structure of a 5d perovskite SrHfO 3 by using optical spectroscopy and O 1s x-ray absorption spectroscopy. From the combined spectra the values of electronic structure parameters are estimated properly. In particular, the crystal field splitting energy, which is closely associated with the p-d hybridization strength, is as high as ˜5 eV, and the Sr 4d bands appear to be strongly mixed with the Hf 5d bands. These findings are discussed in relation to a possible ferroelectric instability in SrHfO 3, and are compared with electronic properties of similar compounds, 3d SrTiO 3 and 4d SrZrO 3.

  2. Electronic structure of RSn1.1Ge0.9 (R = Dy, Ho) ternary compounds: Band calculation and optical properties

    NASA Astrophysics Data System (ADS)

    Knyazev, Yu. V.; Lukoyanov, A. V.; Kuz'min, Yu. I.; Gupta, S.; Suresh, K. G.

    2017-09-01

    The results of investigations of the electronic structure and optical properties of the compounds DySn1.1Ge0.9 and HoSn1.1Ge0.9 are presented. Our spin-polarized calculations of the electronic structure are carried out in the local spin density approximation with correction for strong electronic correlations (LSDA+U method) in the 4f shell of the rare-earth ion. In the wavelength range 0.22-15 μm, the optical constants of the intermetallic compounds were measured by the ellipsometric method, and a number of spectral and electronic characteristics are determined. Based on the calculated densities of states, the structural features of the optical conductivity in the region of interband light absorption are interpreted.

  3. Effective band structure of random alloys.

    PubMed

    Popescu, Voicu; Zunger, Alex

    2010-06-11

    Random substitutional A(x)B(1-x) alloys lack formal translational symmetry and thus cannot be described by the language of band-structure dispersion E(k(→)). Yet, many alloy experiments are interpreted phenomenologically precisely by constructs derived from wave vector k(→), e.g., effective masses or van Hove singularities. Here we use large supercells with randomly distributed A and B atoms, whereby many different local environments are allowed to coexist, and transform the eigenstates into an effective band structure (EBS) in the primitive cell using a spectral decomposition. The resulting EBS reveals the extent to which band characteristics are preserved or lost at different compositions, band indices, and k(→) points, showing in (In,Ga)N the rapid disintegration of the valence band Bloch character and in Ga(N,P) the appearance of a pinned impurity band.

  4. Theoretical study on electronic structure of bathocuproine: Renormalization of the band gap in the crystalline state and the large exciton binding energy

    NASA Astrophysics Data System (ADS)

    Yanagisawa, Susumu; Hatada, Shin-No-Suke; Morikawa, Yoshitada

    Bathocuproine (BCP) is a promising organic material of a hole blocking layer in organic light-emitting diodes or an electron buffer layer in organic photovoltaic cells. The nature of the unoccupied electronic states is a key characteristic of the material, which play vital roles in the electron transport. To elucidate the electronic properties of the molecular or crystalline BCP, we use the GW approximation for calculation of the fundamental gap, and the long-range corrected density functional theory for the molecular optical absorption. It is found that the band gap of the BCP single crystal is 4.39 eV, and it is in agreement with the recent low-energy inverse photoemission spectroscopy measurement. The polarization energy is estimated to be larger than 1 eV, demonstrating the large polarization effects induced by the electronic clouds surrounding the injected charge. The theoretical optical absorption energy is 3.68 eV, and the exciton binding energy is estimated to be 0.71 eV, implying the large binding in the eletron-hole pair distributed around the small part of the molecular region. This work was supported by the Grants-in-Aid for Young Scientists (B) (No. 26810009), and for Scientific Research on Innovative Areas ``3D Active-Site Science'' (No. 26105011) from Japan Society for the Promotion of Science.

  5. DFT-based ab initio study of electronic band structure and elastic properties of Li2B3O4F3 and Li2B6O9F2 crystals

    NASA Astrophysics Data System (ADS)

    Andriyevsky, B.; Doll, K.; Pilz, T.; Jansen, M.

    2013-04-01

    An ab initio DFT-based study of the electronic band structure and elastic properties of the new lithium ion conductors Li2B3O4F3 and Li2B6O9F2 has been performed. The hybrid functional B3LYP was employed with the CRYSTAL code, and the local density approximation (LDA) with the VASP code. Starting from the experimentally determined structures, both crystals were computationally optimized. The relaxed structures were found to be very close to the initial, experimental, ones. The band structure shows wide band gaps Eg, near 9-10 eV (B3LYP) or 6-7 eV (LDA), depending on the level of theory applied. The top valence bands of both crystals mainly derive from oxygen and fluorine, and the bottom conduction bands are mainly associated with boron and oxygen. An analysis of the elastic properties of the two compounds has been done, and all coefficients of the elastic stiffness tensor cij and the bulk modulus B are calculated. The interatomic distances, Mulliken charges and overlap populations are discussed from the viewpoint of lithium ion conductivity.

  6. Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

    NASA Astrophysics Data System (ADS)

    Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

    2016-04-01

    X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

  7. Unfolding the band structure of GaAsBi

    NASA Astrophysics Data System (ADS)

    Maspero, R.; Sweeney, S. J.; Florescu, Marian

    2017-02-01

    Typical supercell approaches used to investigate the electronic properties of GaAs(1-x)Bi(x) produce highly accurate, but folded, band structures. Using a highly optimized algorithm, we unfold the band structure to an approximate E≤ft(\\mathbf{k}\\right) relation associated with an effective Brillouin zone. The dispersion relations we generate correlate strongly with experimental results, confirming that a regime of band gap energy greater than the spin-orbit-splitting energy is reached at around 10% bismuth fraction. We also demonstrate the effectiveness of the unfolding algorithm throughout the Brillouin zone (BZ), which is key to enabling transition rate calculations, such as Auger recombination rates. Finally, we show the effect of disorder on the effective masses and identify approximate values for the effective mass of the conduction band and valence bands for bismuth concentrations from 0-12%.

  8. Electronic band structure and optical properties of titanium oxyphosphates Li{sub 0.50}Co{sub 0.25}TiO(PO{sub 4}) single crystals: An ab-initio calculations

    SciTech Connect

    Reshak, Ali Hussain; Khenata, R.; Auluck, S.

    2011-08-15

    From the refined atomic positions obtained by Belmal et al. (2004) using X-ray diffraction for Li{sub 0.50}Co{sub 0.25}TiO(PO{sub 4}), we have performed a structural optimization by minimizing the forces acting on the atoms keeping the lattice parameters fixed at the experimental values. With this relaxed (optimized) geometry we have performed a comprehensive theoretical study of electronic properties and dispersion of the linear optical susceptibilities using the full potential linear augmented plane wave (FP-LAPW) method. The generalized gradient approximation (GGA) exchange-correlation potential was applied. In addition, the Engel-Vosko generalized gradient approximation (EVGGA) was used for comparison with GGA because it is known that EVGGA approach yields better band splitting compared to the GGA. We have calculated the band structure, and the total and partial densities of states. The electron charge densities and the bonding properties were analyzed and discussed. The complex dielectric optical susceptibilities were discussed in detail. - Graphical abstract: It is shown that P is tetrahedrally coordinated by four O ions. Highlights: > Comprehensive theoretical study of electronic and optical properties was performed. > Using X-ray diffraction data we have performed a structural optimization. > The electron charge densities and the bonding properties were analyzed and discussed. > Fermi surface was analyzed since it is useful for predicting thermal, magnetic, and optical properties. > The density of states at E{sub F} and the electronic specific heat coefficient were calculated.

  9. Ultrafast Electronic Band Gap Control in an Excitonic Insulator

    NASA Astrophysics Data System (ADS)

    Mor, Selene; Herzog, Marc; Golež, Denis; Werner, Philipp; Eckstein, Martin; Katayama, Naoyuki; Nohara, Minoru; Takagi, Hide; Mizokawa, Takashi; Monney, Claude; Stähler, Julia

    2017-08-01

    We report on the nonequilibrium dynamics of the electronic structure of the layered semiconductor Ta2NiSe5 investigated by time- and angle-resolved photoelectron spectroscopy. We show that below the critical excitation density of FC=0.2 mJ cm-2 , the band gap narrows transiently, while it is enhanced above FC . Hartree-Fock calculations reveal that this effect can be explained by the presence of the low-temperature excitonic insulator phase of Ta2 NiSe5 , whose order parameter is connected to the gap size. This work demonstrates the ability to manipulate the band gap of Ta2 NiSe5 with light on the femtosecond time scale.

  10. Transport in bilayer and trilayer graphene: band gap engineering and band structure tuning

    NASA Astrophysics Data System (ADS)

    Zhu, Jun

    2014-03-01

    Controlling the stacking order of atomically thin 2D materials offers a powerful tool to control their properties. Linearly dispersed bands become hyperbolic in Bernal (AB) stacked bilayer graphene (BLG). Both Bernal (ABA) and rhombohedral (ABC) stacking occur in trilayer graphene (TLG), producing distinct band structures and electronic properties. A symmetry-breaking electric field perpendicular to the sample plane can further modify the band structures of BLG and TLG. In this talk, I will describe our experimental effort in these directions using dual-gated devices. Using thin HfO2 film deposited by ALD as gate dielectric, we are able to apply large displacement fields D > 6 V/nm and observe the opening and saturation of the field-induced band gap Eg in bilayer and ABC-stacked trilayer graphene, where the conduction in the mid gap changes by more than six decades. Its field and temperature dependence highlights the crucial role played by Coulomb disorder in facilitating hopping conduction and suppressing the effect of Eg in the tens of meV regime. In contrast, mid-gap conduction decreases with increasing D much more rapidly in clean h-BN dual-gated devices. Our studies also show the evolution of the band structure in ABA-stacked TLG, in particular the splitting of the Dirac-like bands in large D field and the signatures of two-band transport at high carrier densities. Comparison to theory reveals the need for more sophisticated treatment of electronic screening beyond self-consistent Hartree calculations to accurately predict the band structures of trilayer graphene and graphenic materials in general.

  11. The role of specific features of the electronic structure in electrical resistivity of band ferromagnets Co2Fe Z ( Z = Al, Si, Ga, Ge, In, Sn, Sb)

    NASA Astrophysics Data System (ADS)

    Kourov, N. I.; Marchenkov, V. V.; Perevozchikova, Yu. A.; Weber, H. W.

    2017-05-01

    The electrical resistivity ρ( T) of the band ferromagnets Co2FeZ (where Z = Al, Si, Ga, Ge, In, Sn, and Sb are s- and p-elements of Mendeleev's Periodic Table) has been investigated in the temperature range 4.2 K < T < 1100 K. It has been shown that the dependences ρ( T) of these alloys in a magnetically ordered state at temperatures T < T C are predominantly determined by the specific features of the electronic spectrum in the vicinity of the Fermi level. The processes of charge carrier scattering affect the behavior of the electrical resistivity ρ( T) only in the vicinity of the Curie temperature T C and above, as well as in the low-temperature range (at T ≪ T C).

  12. Atomic arrangement and electron band structure of Si(1 1 1)-ß-√3 x √3-Bi reconstruction modified by alkali-metal adsorption: ab initio study.

    PubMed

    Eremeev, S V; Chukurov, E N; Gruznev, D V; Zotov, A V; Saranin, A A

    2015-08-05

    Using ab initio calculations, atomic structure and electronic properties of Si(1 1 1)[Formula: see text]-Bi surface modified by adsorption of 1/3 monolayer of alkali metals, Li, Na, K, Rb and Cs, have been explored. Upon adsorption of all metals, a similar atomic structure develops at the surface where twisted chained Bi trimers are arranged into a honeycomb network and alkali metal atoms occupy the [Formula: see text] sites in the center of each honeycomb unit. Among other structural characteristics, the greatest variation concerns the relative heights at which alkali metals reside with respect to Bi-trimer layer. Except for Li, the other metals reside higher than Bi layer and their heights increase with atomic number. All adsorbed surface structures display similar electron band structures of which the most essential feature is metallic surface-state band with a giant spin splitting. This electronic property allows one to consider the Si(1 1 1)[Formula: see text]-Bi surfaces modified by alkali metal adsorption as a set of material systems showing promise for spintronic applications.

  13. Atomic arrangement and electron band structure of Si(1 1 1)-ß-\\sqrt{3}\\times \\sqrt{3} -Bi reconstruction modified by alkali-metal adsorption: ab initio study

    NASA Astrophysics Data System (ADS)

    Eremeev, S. V.; Chukurov, E. N.; Gruznev, D. V.; Zotov, A. V.; Saranin, A. A.

    2015-08-01

    Using ab initio calculations, atomic structure and electronic properties of Si(1 1 1)\\sqrt{3}× \\sqrt{3} -Bi surface modified by adsorption of 1/3 monolayer of alkali metals, Li, Na, K, Rb and Cs, have been explored. Upon adsorption of all metals, a similar atomic structure develops at the surface where twisted chained Bi trimers are arranged into a honeycomb network and alkali metal atoms occupy the {{T}4} sites in the center of each honeycomb unit. Among other structural characteristics, the greatest variation concerns the relative heights at which alkali metals reside with respect to Bi-trimer layer. Except for Li, the other metals reside higher than Bi layer and their heights increase with atomic number. All adsorbed surface structures display similar electron band structures of which the most essential feature is metallic surface-state band with a giant spin splitting. This electronic property allows one to consider the Si(1 1 1)\\sqrt{3}× \\sqrt{3} -Bi surfaces modified by alkali metal adsorption as a set of material systems showing promise for spintronic applications.

  14. Electronic structure of layered quaternary chalcogenide materials for band-gap engineering: The example of Cs2MIIM3IVQ8

    NASA Astrophysics Data System (ADS)

    Besse, Rafael; Sabino, Fernando P.; Da Silva, Juarez L. F.

    2016-04-01

    Quaternary chalcogenide materials offer a wide variety of chemical and physical properties, and hence, those compounds have been widely studied for several technological applications. Recently, experimental studies have found that the chalcogenide Cs2MIIM3IVQ8 family (MII = Mg , Zn , Cd , Hg , MIV = Ge , Sn and Q = S , Se , Te ), which includes 24 compounds, yields a wide range of band gaps, namely, from 1.07 to 3.4 eV, and hence, they have attracted great interest. To obtain an improved atomistic understanding of the role of the cations and anions on the physical properties, we performed a first-principles investigation of the 24 Cs2MIIM3IVQ8 compounds employing density functional theory within semilocal and hybrid exchange-correlation energy functionals and the addition of van der Waals corrections to improve the description of the weakly interacting layers. Our lattice parameters are in good agreement with the available experimental data (i.e., 11 compounds), and the equilibrium volume increases linearly by increasing the atomic number of the chalcogen, which can be explained by the increased atomic radius of the chalcogen atoms from S to Te . We found that van der Waals corrections play a crucial role in the lattice parameter in the stacking direction of the Cs2MIIM3IVQ8 layers, while the binding energy per unit area has similar magnitude as obtained for different layered materials. We obtained that the band gaps follow a linear relation as a function of the unit cell volume, which can be explained by the atomic size of the chalcogen atom and the relative position of the Q p states within the band structure. The fundamental and optical band gaps differ by less than 0.1 eV. The band gaps obtained with the hybrid functional are in good agreement with the available experimental data. Furthermore, we found from the Bader analysis, that the Coulomb interations among the cations and anions play a crucial role on the energetic properties.

  15. Theory of Auger-electron and appearance-potential spectroscopy for interacting valence-band electrons

    NASA Astrophysics Data System (ADS)

    Nolting, W.; Geipel, G.; Ertl, K.

    1991-12-01

    A theory of Auger-electron spectroscopy (AES) and appearance-potential spectroscopy (APS) is presented for interacting electrons in a nondegenerate energy band, described within the framework of the Hubbard model. Both types of spectroscopy are based on the same two-particle spectral density. A diagrammatic vertex-correction method (Matsubara formalism) is used to express this function in terms of the one-particle spectral density. The latter is approximately determined for arbitrary temperature T, arbitrary coupling strength U/W (U, the intra-atomic Coulomb matrix element; W, the width of the ``free'' Bloch band), and arbitrary band occupations n (0<=n<=2 average number of band electrons per site) by a self-consistent moment method. In weakly coupled systems the electron correlations give rise to certain deformations of the quasiparticle density of states (QDOS) in relation to the Bloch density of states (BDOS), where, however, spontaneous magnetic order is excluded, irrespective of the band filling n. The AE (AP) spectra consist of only one structure a few eV wide (``bandlike'') which is strongly n dependent, but only slightly T dependent, being rather well approximated by a simple self-convolution of the occupied (unoccupied) QDOS. For strongly correlated electrons the Bloch band splits into two quasiparticle subbands. This leads for n<1 to one line in the AE spectrum and three lines in the AP spectrum, and vice versa for n>1. For sufficiently strong correlations U/W additional satellites appear that refer to situations where the two excited quasiparticles (quasiholes) propagate as tightly bound pairs through the lattice without being scattered by other charge carriers. As soon as the satellite splits off from the bandlike part of the spectrum, it takes almost the full spectral weight, conveying the impression of an ``atomiclike'' AE (AP) line shape. The satellite has almost exactly the structure of the free BDOS. If the particle density n as well as the hole

  16. Temperature Effects in the Band Structure of Topological Insulators.

    PubMed

    Monserrat, Bartomeu; Vanderbilt, David

    2016-11-25

    We study the effects of temperature on the band structure of the Bi_{2}Se_{3} family of topological insulators using first-principles methods. Increasing temperature drives these materials towards the normal state, with similar contributions from thermal expansion and from electron-phonon coupling. The band gap changes with temperature reach 0.3 eV at 600 K, of similar size to the changes caused by electron correlation. Our results suggest that temperature-induced topological phase transitions should be observable near critical points of other external parameters.

  17. Energetic stabilization of the Mizoguchi structure for magnetite by band-structure effects

    NASA Astrophysics Data System (ADS)

    Mishra, S. K.; Satpathy, S.

    1993-03-01

    We show that the Mizoguchi structure is energetically stabilized over the Verwey structure for magnetite by electron hopping on the B sublattice. We use the one-band Cullen-Callen model Hamiltonian for the electronic band structure taking the nearest-neighbor and the second-neighbor Coulomb interactions, U1 and U2, into account. There is a competition between the Coulomb and the band-structure energies. The Coulomb energy tends to favor the Verwey structure while the band-structure energy tends to favor the Mizoguchi structure. We find that for U1<~0.25 eV, the kinetic-energy (band-structure energy) term dominates making the Mizoguchi structure energetically favorable over the Verwey structure. For a larger value of U1, the band-structure effect alone is insufficient, making it necessary to invoke other mechanisms such as the electron-phonon coupling earlier proposed by other authors, to stabilize the Mizoguchi structure. The energy of a single ``reversed-ring'' excitation in the Mizoguchi structure is calculated to be of the order of a few meV. The small energy is consistent with Cullen's explanation of the absence of cell doubling in the Ca plane as observed in diffraction experiments. The Mizoguchi order is unstable with respect to the formation of reversed-ring excitations if only U1 is present, but is stabilized by a small value of U2.

  18. Electronic band structure and exchange coupling constants in ACr2X4 spinels ( A=Zn , Cd, Hg; X=O , S, Se)

    NASA Astrophysics Data System (ADS)

    Yaresko, A. N.

    2008-03-01

    We present the results of band structure calculations for ACr2X4 ( A=Zn , Cd, Hg and X=O , S, Se) spinels. Effective exchange coupling constants between Cr spins are determined by fitting the energy of spin spirals to a classical Heisenberg model. The calculations reproduce the change of the sign of the dominant nearest-neighbor exchange interaction J1 from antiferromagnetic in oxides to ferromagnetic in sulfides and selenides. It is verified that the ferromagnetic contribution to J1 is due to indirect hopping between Crt2g and eg states via Xp states. Antiferromagnetic coupling between third Cr neighbors is found to be important in all the ACr2X4 spinels studied, whereas other interactions are much weaker. The results are compared to predictions based on the Goodenough-Kanamori rules of superexchange.

  19. Nonreciprocal microwave band-gap structures.

    PubMed

    Belov, P A; Tretyakov, S A; Viitanen, A J

    2002-07-01

    An electrically controlled nonreciprocal electromagnetic band-gap material is proposed and studied. The new material is a periodic three-dimensional regular lattice of small magnetized ferrite spheres. In this paper, we consider plane electromagnetic waves in this medium and design an analytical model for the material parameters. An analytical solution for plane-wave reflection from a planar interface is also presented. In the proposed material, a new electrically controlled stop band appears for one of the two circularly polarized eigenwaves in a frequency band around the ferrimagnetic resonance frequency. This frequency can be well below the usual lattice band gap, which allows the realization of rather compact structures. The main properties of the material are outlined.

  20. Band structures of121,123I

    NASA Astrophysics Data System (ADS)

    Goswami, R.; Sethi, B.; Sarkar, M. S.; Sen, S.

    1995-12-01

    The band structures of121, 123I nuclei have been studied using a version of the particle-rotor-model in which the experimental excitation energies of the neighbouring (A-1) cores can be fed directly as input parameters. The calculations have been carried out with axially symmetric Nilsson potential with both prolate and oblate deformations. The parameters of the model have been chosen from earlier theoretical work and experimental odd-even mass differences. Only the Coriolis attenuation factor has been treated as adjustable parameter. The theoretical band structures are in very good agreement with the available experimental data.

  1. Shear-strain-induced structural and electronic modifications of the molecular crystal 1,1-diamino-2,2-dinitroethylene: Slip-plane flow and band gap relaxation

    NASA Astrophysics Data System (ADS)

    Kuklja, Maija M.; Rashkeev, Sergey N.

    2007-03-01

    First-principles calculations of the structural and electronic properties of the deformed molecular crystal 1,1-diamino-2,2-dinitroethylene (FOX-7) under shear-strain loading are presented. The reaction of the crystal to applied shear-strain loading is found to be highly anisotropic. When the external loading is removed, the relaxation of the system is mainly defined by stretching, bending, and rotations of the NO2 groups of neighboring molecules from the two adjacent zigzag-shaped crystalline planes that were initially shifted. In general, the deformed molecular crystal relaxes to its initial, ideal crystalline FOX-7 structure. However, different planes remain shifted relatively to each other on vectors, which are typically incommensurated with any translational vector of the ideal crystal. This fact makes an existence of ideal crystals of this material quite problematic. We also found that no metallization occurs under shear-strain loading. We suggest that the considered mechanisms of the shear-strain relaxation of the structural and electronic degrees of freedom are typical for layered anisotropic molecular crystals, and that they should significantly affect their chemical reactivity, conductivity, optical properties, and initiation of detonation in energetic materials.

  2. Quasi-particle electronic band structure and alignment of the V-VI-VII semiconductors SbSI, SbSBr, and SbSeI for solar cells

    SciTech Connect

    Butler, Keith T.; McKechnie, Scott; Azarhoosh, Pooya; Schilfgaarde, Mark van; Scanlon, David O.; Walsh, Aron

    2016-03-14

    The ternary V-VI-VII chalcohalides consist of one cation and two anions. Trivalent antimony—with a distinctive 5s{sup 2} electronic configuration—can be combined with a chalcogen (e.g., S or Se) and halide (e.g., Br or I) to produce photoactive ferroelectric semiconductors with similarities to the Pb halide perovskites. We report—from relativistic quasi-particle self-consistent GW theory—that these materials have a multi-valley electronic structure with several electron and hole basins close to the band extrema. We predict ionisation potentials of 5.3–5.8 eV from first-principles for the three materials, and assess electrical contacts that will be suitable for achieving photovoltaic action from these unconventional compounds.

  3. Electronic structure investigations of quasicrystals

    NASA Astrophysics Data System (ADS)

    Rotenberg, E.; Theis, W.; Horn, K.

    2004-08-01

    We present a review of the determination of density of states (DOS) of quasicrystals using valence band photoemission spectroscopy. The absence of fine or spiky structure in the angle-integrated DOS of quasicrystals suggests the possibility of delocalized electronic states. These were confirmed with angle-resolved photoemission studies, which clearly establish the presence of dispersing features attributed to momentum-dependent bandstructure. Such dispersing states are observed not only for deeper-lying sp states, but also for d-derived bands near the Fermi level. Data from three different high symmetry surfaces of decagonal Al-Ni-Co, an ideal model system, are presented. We find that only a few dominant reciprocal lattice vectors are sufficient to describe the quasiperiodic potential, and the implications for electronic properties are discussed.

  4. Valence band structure in crystalline pentacene thin films

    NASA Astrophysics Data System (ADS)

    Hatch, Richard; Huber, David; Höchst, Hartmut

    2009-03-01

    Organic semiconductors, such as pentacene (Pn), are beginning to show promise as a low-cost substitute for conventional semiconductors for a variety of electronic devices. The overlap of π-orbitals in the Pn crystal leads to molecular orbital-derived bands. We used angle-resolved photoemission spectroscopy (ARPES) to reveal the Pn in-plane band structure of the two highest occupied molecular orbital-derived bands in crystalline thin film Pn (grown on a Bi substrate) for various temperatures between 75 K and 300 K. We mapped these two bands in several crystallographic directions with special attention given to the region near the top of the valence band and show, within the limits of our experimental resolution, that temperature does not change the dispersions of these bands. We fit the band structure to a tight binding model and compared our results with recent theoretical predictions[1-2]. We also calculated the in-plane reciprocal effective mass for the M point and compared it with the measured mobility. [1] H. Yoshida et. al. Phys. Rev. B 77, 235205 (2008). [2] G. A. de Wijs et. al. Synth. Met. 139, 109 (2003).

  5. Gigahertz-band electronically scanned antennas

    NASA Astrophysics Data System (ADS)

    Bei, Nikolai A.

    2000-12-01

    Foundation and principles of radio lenses construction of centimeter and millimeter wave ranges with controlled refracting index, combining the quality of phased array antennas with optical devices are stated. Possibilities of the electronically scanning with wide-angle sector and high gain are maintained. Construction principles of scanning antennas with controlled lenses, combining the quality of phased array antennas with optical devices, are stated. Possibilities of electronically scanning with broad angle sector and high gain are maintained. Some examples of construction of antennas millimeter range of waves are listed here.

  6. Band structure engineering at heterojunction interfaces via the piezotronic effect.

    PubMed

    Shi, Jian; Starr, Matthew B; Wang, Xudong

    2012-09-04

    Engineering the electronic band structure using the piezopotential is an important aspect of piezotronics, which describes the coupling between the piezoelectric property and semiconducting behavior and functionalities. The time-independent band structure change under short-circuit condition is believed to be due to the remnant piezopotential present at the interface, a result of the finite charge-screening depth at the interface. A series of materials, including metals, semiconductors and electrolytes, are selected to investigate the interfacial band structure engineered by remnant piezopotential when they are in contact with a strained piezoelectric semiconductor. The remnant piezopotential at the interface can switch the junction between Ohmic and Schottky characters, enhance charge combination/separation, regulate barrier height, and modulate reaction kinetics. The difference between the regular time-dependent, pulse-type piezopotential and constant remnant piezopotential is also discussed in detail using a ZnO-based photoelectrochemical anode as an example. The piezotronic effect offers a new pathway for engineering the interface band structure without altering the interface structure or chemical composition, which is promising for improving the performance of many electronics, optoelectronics, and photovoltaic devices.

  7. Novel band structures in germanene on aluminium nitride substrate

    NASA Astrophysics Data System (ADS)

    Ren, Miaojuan; Li, Mingming

    2017-09-01

    Germanene is difficult to grow epitaxially on conventional semiconductor substrates, and to open a sizable band gap is also a hot topic. Using first-principles calculations, we investigate the structural and electronic properties of germanene/aluminium nitride heterobilayers (Ge/AlN HBLs). The results indicate that the Dirac cone with the nearly linear band dispersion of germanene is almost maintained in the band gap of the substrate. Very low effective masses and high carrier mobilities are achieved, and the band gap of germanene can be effectively tuned from 0.004 to 0.46 eV. These results suggest a possible method to design effective field effect transistors that can operate at room temperature.

  8. Synthesis, microstructure, and electronic band structure properties of nanocrystalline neodymium-doped bismuth titanate ferroelectric films fabricated by the sol–gel method

    SciTech Connect

    Miao, Fengjuan; Tao, Bairui; Chu, Paul K.

    2015-01-15

    Graphical abstract: X-ray diffraction indicates that the films are polycrystalline with the pure perovskite phase. Ten Raman active modes and one silicon substrate mode can be observed. The A{sub 1} {sub g}[Bi] at about 59 cm{sup −1} is unchanged whereas the B{sub 1} {sub g} and A{sub 1} {sub g}[Ti] phonon modes shift towards higher frequencies. Photoluminescence shows that the intensities of the two peaks increase with Nd concentration except the Bi{sub 3}NdTi{sub 3}O{sub 12} film, due to the smallest grain size and oxygen vacancy defects. Good optical functions of the BNT films are achieved due to the SE suggesting potential applications in ferroelectric-based optoelectronic devices. - Abstract: Bi{sub 4−x}Nd{sub x}Ti{sub 3}O{sub 12} (BNT) films with different Nd contents (from 0 to 1 with 0.25 intervals) are prepared by the sol–gel process. The Nd substitution effects on the preferred orientation, surface morphology, phonon modes, emission bands, andelectronic band structures of the BNT films are investigated by microscopy, Raman scattering, photoluminescence, and spectroscopic ellipsometry (SE) at room temperature. X-ray diffraction indicates that the films are polycrystalline with the pure perovskite phase. Ten Raman active modes and one silicon substrate mode can be observed. The A{sub 1} {sub g}[Bi] at about 59 cm{sup −1} is unchanged whereas the B{sub 1} {sub g} and A{sub 1} {sub g}[Ti] phonon modes shift towards higher frequencies. Photoluminescence shows that the intensities of the two peaks increase with Nd concentration except the Bi{sub 3}NdTi{sub 3}O{sub 12} film, due to the smallest grain size and oxygen vacancy defects. Good optical functions of the BNT films are achieved due to the SE suggesting potential applications in ferroelectric-based optoelectronic devices.

  9. Measurement of valence band structure in arbitrary dielectric films

    SciTech Connect

    Uhm, Han S.; Choi, Eun H.

    2012-10-15

    A new way of measuring the band structure of various dielectric materials using the secondary electron emission from Auger neutralization of ions is introduced. The first example of this measurement scheme is the magnesium oxide (MgO) films with respect to the application of the films in the display industries. The density of state in the valence bands of MgO film and MgO film with a functional layer (FL) deposited over a dielectric surface reveals that the density peak of film with a FL is considerably less than that of film, thereby indicating a better performance of MgO film with functional layer in display devices. The second example of the measurement is the boron-zinc oxide (BZO) films with respect to the application of the films to the development of solar cells. The measurement of density of state in BZO film suggests that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film. Secondary electron emission by the Auger neutralization of ions is highly instrumental for the determination of the density of states in the valence band of dielectric materials.

  10. Deduction of the chemical state and the electronic structure of Nd{sub 2}Fe{sub 14}B compound from X-ray photoelectron spectroscopy core-level and valence-band spectra

    SciTech Connect

    Wang, Jing; Liang, Le; Zhang, Lanting E-mail: lmsun@sjtu.edu.cn; Sun, Limin E-mail: lmsun@sjtu.edu.cn; Hirano, Shinichi

    2014-10-28

    Characterization of chemical state and electronic structure of the technologically important Nd{sub 2}Fe{sub 14}B compound is attractive for understanding the physical nature of its excellent magnetic properties. X-ray photoelectron spectroscopy (XPS) study of such rare-earth compound is important and also challenging due to the easy oxidation of surface and small photoelectron cross-sections of rare-earth 4f electrons and B 2p electrons, etc. Here, we reported an investigation based on XPS spectra of Nd{sub 2}Fe{sub 14}B compound as a function of Ar ion sputtering time. The chemical state of Fe and that of B in Nd{sub 2}Fe{sub 14}B compound can be clearly determined to be 0 and −3, respectively. The Nd in Nd{sub 2}Fe{sub 14}B compound is found to have the chemical state of close to +3 instead of +3 as compared with the Nd in Nd{sub 2}O{sub 3}. In addition, by comparing the valence-band spectrum of Nd{sub 2}Fe{sub 14}B compound to that of the pure Fe, the contributions from Nd, Fe, and B to the valence-band structure of Nd{sub 2}Fe{sub 14}B compound is made more clear. The B 2p states and B 2s states are identified to be at ∼11.2 eV and ∼24.6 eV, respectively, which is reported for the first time. The contribution from Nd 4f states can be identified both in XPS core-level spectrum and XPS valence-band spectrum. Although Nd 4f states partially hybridize with Fe 3d states, Nd 4f states are mainly localized in Nd{sub 2}Fe{sub 14}B compound.

  11. Density of states in a two-dimensional electron gas: Impurity bands and band tails

    NASA Astrophysics Data System (ADS)

    Gold, A.; Serre, J.; Ghazali, A.

    1988-03-01

    We calculate the density of states of a two-dimensional electron gas in the presence of charged impurities within Klauder's best multiple-scattering approach. The silicon metal-oxide-semiconductor (MOS) system with impurities at the interface is studied in detail. The finite extension of the electron wave function into the bulk is included as well as various dependences of the density of states on the electron, the depletion, and the impurity densities. The transition from an impurity band at low impurity concentration to a band tail at high impurity concentration is found to take place at a certain impurity concentration. If the screening parameter of the electron gas is decreased, the impurity band shifts to lower energy. For low impurity density we find excited impurity bands. Our theory at least qualitatively explains conductivity and infrared-absorption experiments on impurity bands in sodium-doped MOS systems and deep band tails in the gap observed for high doping levels in these systems.

  12. Torque detected broad band electron spin resonance.

    PubMed

    El Hallak, Fadi; van Slageren, Joris; Dressel, Martin

    2010-09-01

    We present a novel technique to measure high frequency electron spin resonance spectra in a broad frequency range (30-1440 GHz) with high sensitivity. We use a quasioptical setup with tunable frequency sources to induce magnetic resonance transitions. These transitions are detected by measuring the change in the magnetic torque signal by means of cantilever torque magnetometry. The setup allows tuning of the frequency, magnetic field, polarization, and the angle between the sample and the external magnetic field. We demonstrate the capabilities of this technique by showing preliminary results obtained on a single crystal of an Fe(4) molecular nanomagnet.

  13. Midfrequency band dynamics of large space structures

    NASA Astrophysics Data System (ADS)

    Coppolino, Robert N.; Adams, Douglas S.; Levine, Marie B.

    2004-09-01

    High and low intensity dynamic environments experienced by a spacecraft during launch and on-orbit operations, respectively, induce structural loads and motions, which are difficult to reliably predict. Structural dynamics in low- and mid-frequency bands are sensitive to component interface uncertainty and non-linearity as evidenced in laboratory testing and flight operations. Analytical tools for prediction of linear system response are not necessarily adequate for reliable prediction of mid-frequency band dynamics and analysis of measured laboratory and flight data. A new MATLAB toolbox, designed to address the key challenges of mid-frequency band dynamics, is introduced in this paper. Finite-element models of major subassemblies are defined following rational frequency-wavelength guidelines. For computational efficiency, these subassemblies are described as linear, component mode models. The complete structural system model is composed of component mode subassemblies and linear or non-linear joint descriptions. Computation and display of structural dynamic responses are accomplished employing well-established, stable numerical methods, modern signal processing procedures and descriptive graphical tools. Parametric sensitivity and Monte-Carlo based system identification tools are used to reconcile models with experimental data and investigate the effects of uncertainties. Models and dynamic responses are exported for employment in applications, such as detailed structural integrity and mechanical-optical-control performance analyses.

  14. Model development for MODIS thermal band electronic cross-talk

    NASA Astrophysics Data System (ADS)

    Chang, Tiejun; Wu, Aisheng; Geng, Xu; Li, Yonghong; Brinkmann, Jake; Keller, Graziela; Xiong, Xiaoxiong (Jack)

    2016-10-01

    MODerate-resolution Imaging Spectroradiometer (MODIS) has 36 bands. Among them, 16 thermal emissive bands covering a wavelength range from 3.8 to 14.4 μm. After 16 years on-orbit operation, the electronic crosstalk of a few Terra MODIS thermal emissive bands develop substantial issues which cause biases in the EV brightness temperature measurements and surface feature contamination. The crosstalk effects on band 27 with center wavelength at 6.7 μm and band 29 at 8.5 μm increased significantly in recent years, affecting downstream products such as water vapor and cloud mask. The crosstalk issue can be observed from nearly monthly scheduled lunar measurements, from which the crosstalk coefficients can be derived. Most of MODIS thermal bands are saturated at moon surface temperatures and the development of an alternative approach is very helpful for verification. In this work, a physical model was developed to assess the crosstalk impact on calibration as well as in Earth view brightness temperature retrieval. This model was applied to Terra MODIS band 29 empirically for correction of Earth brightness temperature measurements. In the model development, the detector nonlinear response is considered. The impacts of the electronic crosstalk are assessed in two steps. The first step consists of determining the impact on calibration using the on-board blackbody (BB). Due to the detector nonlinear response and large background signal, both linear and nonlinear coefficients are affected by the crosstalk from sending bands. The crosstalk impact on calibration coefficients was calculated. The second step is to calculate the effects on the Earth view brightness temperature retrieval. The effects include those from affected calibration coefficients and the contamination of Earth view measurements. This model links the measurement bias with crosstalk coefficients, detector nonlinearity, and the ratio of Earth measurements between the sending and receiving bands. The correction

  15. Low Starting Electron Beam Current in Degenerate Band Edge Oscillators

    NASA Astrophysics Data System (ADS)

    Othman, Mohamed A. K.; Veysi, Mehdi; Figotin, Alexander; Capolino, Filippo

    2016-06-01

    We propose a new principle of operation in vacuum electron-beam-based oscillators that leads to a low beam current for starting oscillations. The principle is based on super synchronous operation of an electron beam interacting with four degenerate electromagnetic modes in a slow-wave structure (SWS). The four mode super synchronous regime is associated with a very special degeneracy condition in the dispersion diagram of a cold periodic SWS called degenerate band edge (DBE). This regime features a giant group delay in the finitelength SWS and low starting-oscillation beam current. The starting beam current is at least an order of magnitude smaller compared to a conventional backward wave oscillator (BWO) of the same length. As a representative example we consider a SWS conceived by a periodically-loaded metallic waveguide supporting a DBE, and investigate starting-oscillation conditions using Pierce theory generalized to coupled transmission lines (CTL). The proposed super synchronism regime can be straightforwardly adapted to waveguide geometries others than the periodically-loaded waveguide considered here since DBE is a general property that can be realized in a variety of structures.

  16. Semiempirical band structure calculations on skutterudite-type compounds

    NASA Astrophysics Data System (ADS)

    Partik, M.; Lutz, H. D.

    Semiempirical band structure calculations were performed on several skutterudite-type compounds by using the extended Hückel method. Starting with the molecular orbital calculations on isolated P4 and As4 rings, the reason for the band dispersions of the skutterudites was found to be the interactions between the nonmetal atoms. Both the intermolecular and the intramolecular interactions between the phosphorus atoms are stronger than those between the arsenic atoms. Hence, the dispersion of the bands in CoP3 is larger than that in CoAs3. The COOP (crystal orbital overlap population) integrals of the intramolecular P-P bonds reveal the relation between the valence electron count and the observed bond lengths. The P-P bonds in the skutterudite-type compounds like TP3 (T=Co, Rh, Ir) become stronger by reduction as in NiP3 and weaker by oxidation as in RT4X12 (X=P, As, Sb; R=alkaline earth or rare earth metals) because the bands near the Fermi level are bonding. The electronic reason for the geometric distortion of the Ge2Y2 (Y=S, Se) units of mixed skutterudites TGe1.5Y1.5 is caused by an electron pair gap on germanium, which corresponds to low electron density perpendicular to the ring plane on the germanium atoms.

  17. Electronic Structure of UGe_2

    NASA Astrophysics Data System (ADS)

    Denlinger, J. D.; Rossnagel, Kai; Allen, J. W.; Huxley, A. D.; Flouquet, J.

    2003-03-01

    UGe2 is of high current interest in connection with the possible role of ferromagnetic fluctuations in its pressure induced superconductivity, for which the Fermi surface (FS) is thought to be important. The band structure and FS contours of a single crystal have been measured using resonant angle-resolved photoemission near the U 5d to 5f edge. Quantitative comparisons to available band structure calculations and to magneto-oscillaory measurements will be presented. Discrepancies with theory are generically similar to those(J.D. Denlinger et al.), J. Electron Spectrosc. Relat. Phenom. 117-118, 347 (2001). found for heavy Fermion URu_2Si2 in that the underlying non-f bands appear to play the major role in defining the FS and in determining the k-space location of 5f spectral weight, in contrast to the important role of actual f-bands in the theory. Supported by the U.S. NSF at U. Mich. (DMR-9971611) and by the U.S. DOE at U. Mich. (DE-FG02-90ER45416) and at the Advanced Light Source (DE-AC03-76SF00098).

  18. Terra MODIS Band 27 Electronic Crosstalk Effect and Its Removal

    NASA Technical Reports Server (NTRS)

    Sun, Junqiang; Xiong, Xiaoxiong; Madhavan, Sriharsha; Wenny, Brian

    2012-01-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the NASA Earth Observing System (EOS). The first MODIS instrument was launched in December, 1999 on-board the Terra spacecraft. MODIS has 36 bands, covering a wavelength range from 0.4 micron to 14.4 micron. MODIS band 27 (6.72 micron) is a water vapor band, which is designed to be insensitive to Earth surface features. In recent Earth View (EV) images of Terra band 27, surface feature contamination is clearly seen and striping has become very pronounced. In this paper, it is shown that band 27 is impacted by electronic crosstalk from bands 28-30. An algorithm using a linear approximation is developed to correct the crosstalk effect. The crosstalk coefficients are derived from Terra MODIS lunar observations. They show that the crosstalk is strongly detector dependent and the crosstalk pattern has changed dramatically since launch. The crosstalk contributions are positive to the instrument response of band 27 early in the mission but became negative and much larger in magnitude at later stages of the mission for most detectors of the band. The algorithm is applied to both Black Body (BB) calibration and MODIS L1B products. With the crosstalk effect removed, the calibration coefficients of Terra MODIS band 27 derived from the BB show that the detector differences become smaller. With the algorithm applied to MODIS L1B products, the Earth surface features are significantly removed and the striping is substantially reduced in the images of the band. The approach developed in this report for removal of the electronic crosstalk effect can be applied to other MODIS bands if similar crosstalk behaviors occur.

  19. Model Development for MODIS Thermal Band Electronic Crosstalk

    NASA Technical Reports Server (NTRS)

    Chang, Tiejun; Wu, Aisheng; Geng, Xu; Li, Yonghonh; Brinkman, Jake; Keller, Graziela; Xiong, Xiaoxiong

    2016-01-01

    MODerate-resolution Imaging Spectroradiometer (MODIS) has 36 bands. Among them, 16 thermal emissive bands covering a wavelength range from 3.8 to 14.4 m. After 16 years on-orbit operation, the electronic crosstalk of a few Terra MODIS thermal emissive bands developed substantial issues that cause biases in the EV brightness temperature measurements and surface feature contamination. The crosstalk effects on band 27 with center wavelength at 6.7 m and band 29 at 8.5 m increased significantly in recent years, affecting downstream products such as water vapor and cloud mask. The crosstalk effect is evident in the near-monthly scheduled lunar measurements, from which the crosstalk coefficients can be derived. The development of an alternative approach is very helpful for independent verification.In this work, a physical model was developed to assess the crosstalk impact on calibration as well as in Earth view brightness temperature retrieval. This model was applied to Terra MODIS band 29 empirically to correct the Earth brightness temperature measurements. In the model development, the detectors nonlinear response is considered. The impact of the electronic crosstalk is assessed in two steps. The first step consists of determining the impact on calibration using the on-board blackbody (BB). Due to the detectors nonlinear response and large background signal, both linear and nonlinear coefficients are affected by the crosstalk from sending bands. The second step is to calculate the effects on the Earth view brightness temperature retrieval. The effects include those from affected calibration coefficients and the contamination of Earth view measurements. This model links the measurement bias with crosstalk coefficients, detector non-linearity, and the ratio of Earth measurements between the sending and receiving bands. The correction of the electronic cross talk can be implemented empirically from the processed bias at different brightness temperature. The implementation

  20. Shape of impurity electronic absorption bands in a nematic liquid crystal

    SciTech Connect

    Aver`yanov, E.M.

    1995-02-01

    It is shown that the anisotropic intermolecular impurity-matrix interactions, statistical orientation properties, and the electronic structure of the uniaxial impurity molecules considerably affect the spectral moments of the impurity electronic adsorption bands in a nematic liquid crystal. 15 refs., 3 figs.

  1. Band structure of polymer extracted from oligomer calculations by elongation method and its applications to nanosystems

    NASA Astrophysics Data System (ADS)

    Pomogaeva, Anna; Springborg, Michael; Kirtman, Bernard; Gu, Feng Long; Aoki, Yuriko

    2012-12-01

    A method developed for building band structure of polymer from elongation oligomer calculations has been applied for studying electronic structures of nanoscaled periodic systems. Band structures of single-walled (4,4) carbon and boron nitrogen nanotubes have been built at different levels of approximations. This method also has been applied for band structure construction of molecular systems where periodicity is disturbed by presence of local defects.

  2. Exciton band structure in two-dimensional materials

    NASA Astrophysics Data System (ADS)

    Cudazzo, Pier Luigi; Sponza, Lorenzo; Giorgetti, Christine; Reining, Lucia; Sottile, Francesco; Gatti, Matteo

    In low-dimensional materials the screening of the Coulomb interaction is strongly reduced. As a consequence, the binding energy of both Wannier and Frenkel excitons in the optical spectra is large and comparable in size. Therefore, contrarily to bulk materials, it cannot serve as a criterion to distinguish different kinds of excitons. Here we demonstrate that the exciton band structure, which can be accessed experimentally, instead provides a powerful way to identify the exciton character. By comparing the ab initio solution of the many-body Bethe-Salpeter equation for graphane and single-layer hexagonal BN, we draw a general picture of the exciton dispersion in two-dimensional materials, highlighting the different role played by the exchange electron-hole interaction and by the hopping terms related to the electronic band structure.

  3. The Band Structure of Polymers: Its Calculation and Interpretation. Part 3. Interpretation.

    ERIC Educational Resources Information Center

    Duke, B. J.; O'Leary, Brian

    1988-01-01

    In this article, the third part of a series, the results of ab initio polymer calculations presented in part 2 are discussed. The electronic structure of polymers, symmetry properties of band structure, and generalizations are presented. (CW)

  4. Electronic valence bands in decagonal Al-Ni-Co

    NASA Astrophysics Data System (ADS)

    Theis, W.; Rotenberg, Eli; Franke, K. J.; Gille, P.; Horn, K.

    2003-09-01

    Valence-band photoemission from the s-p region of the tenfold and the two inequivalent twofold surfaces of quasicrystalline decagonal Al71.8Ni14.8Co13.4 reveals strongly dispersing bands. These exhibit a free-electron-like dispersion along quasiperiodic and periodic directions of the decagonal quasicrystal. The experimental photoemission maps are reproduced in detail by a model in which parabolic bands emanate from a set of reciprocal lattice vectors. A parity rule for the principal zone centers is observed.

  5. Electronic structure of Calcium hexaborides

    SciTech Connect

    Lee, Byounghak; Wang, Lin-Wang

    2005-06-15

    We present a theoretical study of crystal and electronic structures of CaB6 within a screened-exchange local density approximation (sX-LDA). Our ab initio total energy calculations show that CaB6 is a semiconductor with a gap of >1.2 eV, in agreement with recent experimental observations. We show a very sensitive band gap dependence on the crystal internal parameter, which might partially explain the scatter of previous theoretical results. Our calculation demonstrates that it is essential to study this system simultaneously for both crystal structures and electronic properties, and that the sX-LDA provides an ideal method for this problem.

  6. The electronic structure of Lu

    NASA Astrophysics Data System (ADS)

    Tibbetts, T. A.; Harmon, B. N.

    1982-12-01

    The electronic structure of hcp Lu has been calculated using a linearized augmented plane wave (LAPW) method and the Hedin-Lundqvist local density approximation for exchange and correlation. Although complete self-consistency was hindered by the proximity of the 4f levels to the Fermi energy, the valence bands were converged and the calculation yielded a Fermi surface remarkably similar to that calculated by Keeton and Loucks. Comparison is made with recent de Haas-van Alphen and neutron magnetic form factor experiments.

  7. The band-gap enhanced photovoltaic structure

    SciTech Connect

    Tessler, Nir

    2016-05-02

    We critically examine the recently suggested structure that was postulated to potentially add 50% to the photo-conversion efficiency of organic solar cells. We find that the structure could be realized using stepwise increase in the gap as long as the steps are not above 0.1 eV. We also show that the charge extraction is not compromised due to an interplay between the contact's space charge and the energy level modification, which result in a flat energy band at the extracting contact.

  8. Band structure engineering strategies of metal oxide semiconductor nanowires and related nanostructures: A review

    NASA Astrophysics Data System (ADS)

    Piyadasa, Adimali; Wang, Sibo; Gao, Pu-Xian

    2017-07-01

    The electronic band structure of a solid state semiconductor determines many of its physical and chemical characteristics such as electrical, optical, physicochemical, and catalytic activity. Alteration or modification of the band structure could lead to significant changes in these physical and chemical characteristics, therefore we introduce new mechanisms of creating novel solid state materials with interesting properties. Over the past three decades, research on band structure engineering has allowed development of various methods to modify the band structure of engineered materials. Compared to bulk counterparts, nanostructures generally exhibit higher band structure modulation capabilities due to the quantum confinement effect, prominent surface effect, and higher strain limit. In this review we will discuss various band structure engineering strategies in semiconductor nanowires and other related nanostructures, mostly focusing on metal oxide systems. Several important strategies of band structure modulation are discussed in detail, such as doping, alloying, straining, interface and core-shell nanostructuring.

  9. Strong Renormalization of the Electronic Band Gap due to Lattice Polarization in the GW Formalism

    NASA Astrophysics Data System (ADS)

    Botti, Silvana; Marques, Miguel A. L.

    2013-05-01

    The self-consistent GW band gaps are known to be significantly overestimated. We show that this overestimation is, to a large extent, due to the neglect of the contribution of the lattice polarization to the screening of the electron-electron interaction. To solve this problem, we derive within the GW formalism a generalized plasmon-pole model that accounts for lattice polarization. The resulting GW self-energy is used to calculate the band structures of a set of binary semiconductors and insulators. The lattice contribution always decreases the band gap. The shrinkage increases with the size of the longitudinal-transverse optical splitting and it can represent more than 15% of the band gap in highly polar compounds, reducing the band-gap percentage error by a factor of 3.

  10. Band structure of doubly-odd nuclei around mass 130

    SciTech Connect

    Higashiyama, Koji; Yoshinaga, Naotaka

    2011-05-06

    Nuclear structure of the doublet bands in the doubly-odd nuclei with mass A{approx}130 is studied in terms of a pair-truncated shell model. The model reproduces quite well the energy levels of the doublet bands and the electromagnetic transitions. The analysis of the electromagnetic transitions reveals new band structure of the doublet bands.

  11. 5 CFR 9701.321 - Structure of bands.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 5 Administrative Personnel 3 2013-01-01 2013-01-01 false Structure of bands. 9701.321 Section 9701... Structure of bands. (a) DHS may, after coordination with OPM, establish ranges of basic pay for bands, with... rates. (b) For each band within an occupational cluster, DHS will establish a common rate range...

  12. Electronic band structure of compressively strained Ge{sub 1−x}Sn{sub x} with x < 0.11 studied by contactless electroreflectance

    SciTech Connect

    Zelazna, K.; Polak, M. P.; Scharoch, P.; Gladysiewicz, M.; Misiewicz, J.; Kudrawiec, R.; Serafinczuk, J.

    2015-04-06

    Contactless electroreflectance is applied to study direct optical transitions from the heavy hole, light hole, and spin-orbit split-off band to the conduction band in compressively strained Ge{sub 1−x}Sn{sub x} layers of various Sn concentrations at room temperature. It is shown that the energies of these transitions are in very good agreement with theoretical predictions, which take into account non-linear variation of bandgap and spin-orbit splitting plus the strain-related shifts obtained from the Bir-Pikus theory. The bowing parameter for the direct bandgap has been determined to be 1.8 ± 0.2 eV and agree with this one obtained within ab initio calculations, which is 1.97 eV (for indirect bandgap the bowing parameter is 0.26 eV)

  13. Electron Structure of Francium

    NASA Astrophysics Data System (ADS)

    Koufos, Alexander

    2012-02-01

    This talk presents the first calculations of the electronic structure of francium for the bcc, fcc and hcp structures, using the Augmented Plane Wave (APW) method in its muffin-tin and linearized general potential forms. Both the Local Density Approximation (LDA) and Generalized Gradient Approximation (GGA), were used to calculate the electronic structure and total energy of francium (Fr). The GGA and LDA both found the total energy of the hcp structure slightly below that of the fcc and bcc structure, respectively. This is in agreement with similar results for the other alkali metals using the same methodology. The equilibrium lattice constant, bulk modulus and superconductivity parameters were calculated. We found that under pressures, in the range of 1-5 GPa, Fr could be a superconductor at a critical temperature of about 4K.

  14. Photonic bands in two-dimensional microplasma arrays. I. Theoretical derivation of band structures of electromagnetic waves

    SciTech Connect

    Sakai, Osamu; Sakaguchi, Takui; Tachibana, Kunihide

    2007-04-01

    Two theoretical approaches appropriate for two-dimensional plasma photonic crystals reveal dispersions of propagating waves including photonic (electromagnetic) band gaps and multiflatbands. A modified plane-wave expansion method yields dispersions of collisional periodical plasmas, and the complex-value solution of a wave equation by a finite difference method enables us to obtain dispersions with structure effects in an individual microplasma. Periodical plasma arrays form band gaps as well as normal photonic crystals, and multiflatbands are present below the electron plasma frequency in the transverse electric field mode. Electron elastic collisions lower the top frequency of the multiflatbands but have little effect on band gap properties. The spatial gradient of the local dielectric constant resulting from an electron density profile widens the frequency region of the multiflatbands, as demonstrated by the change of surface wave distributions. Propagation properties described in dispersions including band gaps and flatbands agree with experimental observations of microplasma arrays.

  15. Engineering flat electronic bands in quasiperiodic and fractal loop geometries

    NASA Astrophysics Data System (ADS)

    Nandy, Atanu; Chakrabarti, Arunava

    2015-11-01

    Exact construction of one electron eigenstates with flat, non-dispersive bands, and localized over clusters of various sizes is reported for a class of quasi-one-dimensional looped networks. Quasiperiodic Fibonacci and Berker fractal geometries are embedded in the arms of the loop threaded by a uniform magnetic flux. We work out an analytical scheme to unravel the localized single particle states pinned at various atomic sites or over clusters of them. The magnetic field is varied to control, in a subtle way, the extent of localization and the location of the flat band states in energy space. In addition to this we show that an appropriate tuning of the field can lead to a re-entrant behavior of the effective mass of the electron in a band, with a periodic flip in its sign.

  16. A free-electron model for the Dirac bands in graphene

    NASA Astrophysics Data System (ADS)

    Kissinger, G. S.; Satpathy, S.

    2016-11-01

    We present a new method for describing the electronic structure of graphene, by treating the honeycomb lattice as an arrangement of crisscrossing one-dimensional quantum wires. The electrons travel as free particles along the wires and interfere at the three-way junctions formed by the carbon atoms. The approach produces the linearly dispersive Dirac band structure as well as the chiral pseudo-spin-wave functions. When vacancies are incorporated, the model reproduces the well known zero mode states.

  17. Electronic structure and photophysical properties of polyimides

    SciTech Connect

    LaFemina, J.P. ); Kafafi, S.A. . Div. of Environmental Chemistry)

    1992-04-01

    The quantum mechanical AM1 and CNDO/S3 models were used to examine the effect of isoelectronic substitutions on the conformation, electronic structure, and optical absorption spectra for a series of aromatic polyimides. An analysis of the geometric changes at the substitution site and its effect on the electronic structure allowed for the prediction of changes in the ICT band of the optical absorption spectra.

  18. Band gap bowing parameter in pseudomorphic Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structures

    SciTech Connect

    Goyal, Anshu; Kapoor, Ashok K.; Raman, R.; Dalal, Sandeep; Mohan, Premila; Muralidharan, R.

    2015-06-14

    A method for evaluation of aluminium composition in pseudomorphic Al{sub x}Ga{sub 1−x}N layer from the measured photoluminescence (PL) peak energy is presented here. The layers were grown by metalorganic chemical vapor deposition and characterized by high resolution X-ray diffraction (HRXRD), PL, cathodoluminescence, and atomic force microscopy. We estimated the value of biaxial stress in pseudomorphic Al{sub x}Ga{sub 1−x}N layers grown on sapphire and silicon carbide substrates using HRXRD scans. The effect of biaxial stress on the room temperature band edge luminescence in pseudomorphic Al{sub x}Ga{sub 1−x}N/GaN layers for various aluminium compositions in the range of 0.2 < x < 0.3 was determined. The value of pressure coefficient of band gap was also estimated. The stress corrected bowing parameter in Al{sub x}Ga{sub 1−x}N was determined as 0.50 ± 0.06 eV. Our values match well with the theoretically obtained value of bowing parameter from the density functional theory.

  19. Electronic structures of TiO2-TCNE, -TCNQ, and -2,6-TCNAQ surface complexes studied by ionization potential measurements and DFT calculations: Mechanism of the shift of interfacial charge-transfer bands

    NASA Astrophysics Data System (ADS)

    Fujisawa, Jun-ichi; Hanaya, Minoru

    2016-06-01

    Interfacial charge-transfer (ICT) transitions between inorganic semiconductors and π-conjugated molecules allow direct charge separation without loss of energy. This feature is potentially useful for efficient photovoltaic conversions. Charge-transferred complexes of TiO2 nanoparticles with 7,7,8,8-tetracyanoquinodimethane (TCNQ) and its analogues (TCNX) show strong ICT absorption in the visible region. The ICT band was reported to be significantly red-shifted with extension of the π-conjugated system of TCNX. In order to clarify the mechanism of the red-shift, in this work, we systematically study electronic structures of the TiO2-TCNX surface complexes (TCNX; TCNE, TCNQ, 2,6-TCNAQ) by ionization potential measurements and density functional theory (DFT) calculations.

  20. Electron scattering off the ground-state band and the. gamma. band in sup 150 Nd

    SciTech Connect

    Sandor, R.K.J.; Blok, H.P.; Garg, U.; Girod, M.; Harakeh, M.N.; de Jager, C.W.; de Vries, H. Service de Physique et Techniques Nucleaires, Commissariat a l'Energie Atomique, Bruyeres-le-Chatel, Boite Postale 12, F-91680 Bruyeres-le-Chatel, France Nationaal Instituut voor Kernfysica en Hoge-Energiefysica, sectie K , P.O. Box 4395, 1009AJ Amsterdam, The Netherlands Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556)

    1991-05-01

    Inelastic electron scattering to levels of the ground-state band and the {gamma} band in {sup 150}Nd was studied in a momentum transfer range of 0.5 to 2.8 fm{sup {minus}1}. The extracted transition charge densities were compared to microscopic Hartree-Fock-Boguliubov calculations. The overall agreement between the data and the calculations is good, indicating that the dynamic properties of the rotational collective degrees of freedom in statically deformed nuclei can be well described in this microscopic model.

  1. Band structure engineered layered metals for low-loss plasmonics

    PubMed Central

    Gjerding, Morten N.; Pandey, Mohnish; Thygesen, Kristian S.

    2017-01-01

    Plasmonics currently faces the problem of seemingly inevitable optical losses occurring in the metallic components that challenges the implementation of essentially any application. In this work, we show that Ohmic losses are reduced in certain layered metals, such as the transition metal dichalcogenide TaS2, due to an extraordinarily small density of states for scattering in the near-IR originating from their special electronic band structure. On the basis of this observation, we propose a new class of band structure engineered van der Waals layered metals composed of hexagonal transition metal chalcogenide-halide layers with greatly suppressed intrinsic losses. Using first-principles calculations, we show that the suppression of optical losses lead to improved performance for thin-film waveguiding and transformation optics. PMID:28436432

  2. Band structure engineered layered metals for low-loss plasmonics.

    PubMed

    Gjerding, Morten N; Pandey, Mohnish; Thygesen, Kristian S

    2017-04-24

    Plasmonics currently faces the problem of seemingly inevitable optical losses occurring in the metallic components that challenges the implementation of essentially any application. In this work, we show that Ohmic losses are reduced in certain layered metals, such as the transition metal dichalcogenide TaS2, due to an extraordinarily small density of states for scattering in the near-IR originating from their special electronic band structure. On the basis of this observation, we propose a new class of band structure engineered van der Waals layered metals composed of hexagonal transition metal chalcogenide-halide layers with greatly suppressed intrinsic losses. Using first-principles calculations, we show that the suppression of optical losses lead to improved performance for thin-film waveguiding and transformation optics.

  3. From lattice Hamiltonians to tunable band structures by lithographic design

    NASA Astrophysics Data System (ADS)

    Tadjine, Athmane; Allan, Guy; Delerue, Christophe

    2016-08-01

    Recently, new materials exhibiting exotic band structures characterized by Dirac cones, nontrivial flat bands, and band crossing points have been proposed on the basis of effective two-dimensional lattice Hamiltonians. Here, we show using atomistic tight-binding calculations that these theoretical predictions could be experimentally realized in the conduction band of superlattices nanolithographed in III-V and II-VI semiconductor ultrathin films. The lithographed patterns consist of periodic lattices of etched cylindrical holes that form potential barriers for the electrons in the quantum well. In the case of honeycomb lattices, the conduction minibands of the resulting artificial graphene host several Dirac cones and nontrivial flat bands. Similar features, but organized in different ways, in energy or in k -space are found in kagome, distorted honeycomb, and Lieb superlattices. Dirac cones extending over tens of meV could be obtained in superlattices with reasonable sizes of the lithographic patterns, for instance in InAs/AlSb heterostructures. Bilayer artificial graphene could be also realized by lithography of a double quantum-well heterostructure. These new materials should be interesting for the experimental exploration of Dirac-based quantum systems, for both fundamental and applied physics.

  4. Hydrogen production by tuning the photonic band gap with the electronic band gap of TiO₂.

    PubMed

    Waterhouse, G I N; Wahab, A K; Al-Oufi, M; Jovic, V; Anjum, D H; Sun-Waterhouse, D; Llorca, J; Idriss, H

    2013-10-10

    Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.

  5. Band-Gap Design of Quaternary (In,Ga) (As,Sb) Semiconductors via the Inverse-Band-Structure Approach

    SciTech Connect

    Piquini, P.; Graf, P. A.; Zunger. A.

    2008-01-01

    Quaternary systems illustrated by (Ga,In)(As,Sb) manifest a huge configurational space, offering in principle the possibility of designing structures that are lattice matched to a given substrate and have given electronic properties (e.g., band gap) at more than one composition. Such specific configurations were however, hitherto, unidentified. We show here that using a genetic-algorithm search with a pseudopotential Inverse-band-structure (IBS) approach it is possible to identify those configurations that are naturally lattice matching (to GaSb) and have a specific band gap (310 meV) at more than one composition. This is done by deviating from randomness, allowing the IBS to find a partial atomic ordering. This illustrates multitarget design of the electronic structure of multinary systems.

  6. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Frequency in Middle of Magnon Band Gap in a Layered Ferromagnetic Superlattice

    NASA Astrophysics Data System (ADS)

    Qiu, Rong-Ke; Zhao, Jian; Ying, Cai-Hong

    2010-12-01

    The frequency in middle of magnon energy hand in a five-layer ferromagnetic superlattice is studied by using the linear spin-wave approach and Green's function technique. It is found that four energy gaps and corresponding four frequencie in middle of energy gaps exist in the magnon band along Kx direction perpendicular to the superlattice plane. The spin quantum numbers and the interlayer exchange couplings all affect the four frequencies in middle of the energy gaps. When all interlayer exchange couplings are same, the effect of spin quantum numbers on the frequency ωg1 in middle of the energy gap Δω12 is complicated, and the frequency ωg1 depends on the match of spin quantum numbers in each layer. Meanwhile, the frequencies ωg2, ωg3, and ωg4 in middle of other energy gaps increase monotonously with increasing spin quantum numbers. When the spin quantum numbers in each layer are same, the frequencies ωg1, ωg2, ωg3, and ωg4, all increase monotonously with increasing interlayer exchange couplings.

  7. Rotational band structure in 32Mg

    NASA Astrophysics Data System (ADS)

    Crawford, H. L.; Fallon, P.; Macchiavelli, A. O.; Poves, A.; Bader, V. M.; Bazin, D.; Bowry, M.; Campbell, C. M.; Carpenter, M. P.; Clark, R. M.; Cromaz, M.; Gade, A.; Ideguchi, E.; Iwasaki, H.; Langer, C.; Lee, I. Y.; Loelius, C.; Lunderberg, E.; Morse, C.; Richard, A. L.; Rissanen, J.; Smalley, D.; Stroberg, S. R.; Weisshaar, D.; Whitmore, K.; Wiens, A.; Williams, S. J.; Wimmer, K.; Yamamato, T.

    2016-03-01

    There is significant evidence supporting the existence of deformed ground states within the neutron-rich N ≈20 neon, sodium, and magnesium isotopes that make up what is commonly called the "island of inversion." However, the rotational band structures, which are a characteristic fingerprint of a rigid nonspherical shape, have yet to be observed. In this work, we report on a measurement and analysis of the yrast (lowest lying) rotational band in 32Mg up to spin I =6+ produced in a two-step projectile fragmentation reaction and observed using the state-of-the-art γ -ray tracking detector array, GRETINA (γ -ray energy tracking in-beam nuclear array). Large-scale shell-model calculations using the SDPF-U-MIX effective interaction show excellent agreement with the new data. Moreover, a theoretical analysis of the spectrum of rotational states as a function of the pairing gap, together with cranked-shell-model calculations, provides intriguing evidence for a reduction in pairing correlations with increased angular momentum, also in line with the shell-model results.

  8. Rotational Band Structure in 32Mg

    NASA Astrophysics Data System (ADS)

    Crawford, Heather; NSCL E11029 Collaboration Team

    2016-03-01

    There is significant evidence supporting the existence of deformed ground states within the neutron-rich N =20 neon, sodium, and magnesium isotopes that make up what is commonly called the ``Island of Inversion''. However, rotational band structures, a characteristic fingerprint of a rigid non-spherical shape, have yet to be observed. We report on a measurement and analysis of the yrast (lowest lying) rotational band in 32Mg up to spin I = 6+, produced in a two-step projectile fragmentation reaction and observed using the state-of-the-art γ-ray tracking detector array, GRETINA. Large-scale shell model calculations using the SDPF-U-MIX effective interaction show excellent agreement with the new data. Moreover, a theoretical analysis of the spectrum of rotational states as a function of the pairing gap, together with cranked shell model calculations, provides intriguing evidence for a reduction in pairing correlations with increased angular momentum, also in line with the shell-model results. This material is based upon work supported by the U.S. DOE, Office of Science, NP Office under Contract No. DE-AC02-05CH11231 (LBNL). GRETINA was funded by the U.S. DOE Office of Science. Operation of the array at NSCL was supported by NSF.

  9. Dispersion of electronic bands in intermetallic compound LiBe and related properties

    NASA Astrophysics Data System (ADS)

    Reshak, A. H.

    2015-10-01

    Based on the all-electron full-potential linearized augmented plane wave within density functional theory calculations dispersion of the electronic band structure, total and the angular momentum resolved projected density of states, the shape of Fermi surface, the electronic charge density distribution and the optical response of the intermetallic LiBe compound are performed. Seeking the influence of the different exchange correlations on the ground state properties of the intermetallic LiBe, calculations are performed within four types of exchange correlations, namely the local density approximation, general gradient approximation, Engel-Vosko generalized gradient approximation and the modified Becke-Johnson potential. It has been found that replacing the exchange correlations exhibit insignificant influence on the bands dispersion, density of states and hence the optical properties. The obtained results suggest that there exists a strong hybridization between the states resulting in covalent bonds. The Fermi surface is formed by two bands and the center of the Fermi surface is formed by holes. The electronic charge density distribution confirms that the charge is attracted toward Be atoms and the calculated bond lengths are in good accordance with the available experimental data. To get deep insight into the electronic structure, the optical properties are investigated and analyzed in accordance with the calculated band structure and the density of states.

  10. Electron phonon effects on the direct band gap in semiconductors: LCAO calculations

    NASA Astrophysics Data System (ADS)

    Olguín, D.; Cardona, M.; Cantarero, A.

    2002-06-01

    Using a perturbative treatment of the electron-phonon interaction, we have studied the effect of phonons on the direct band gap of conventional semiconductors. Our calculations are performed in the framework of the tight-binding linear combination of atomic orbitals (LCAO) approach. Within this scheme we have calculated the temperature and isotopic mass dependence of the lowest direct band gap of several semiconductors with diamond and zincblende structure. Our results reproduce the overall trend of available experimental data for the band gap as a function of temperature, as well as give correctly the mass dependence of the band gap on isotopic. A calculation of conduction band intervalley deformation potentials is also reported. Finally, calculated Debye-Waller factors are compared with X-ray and EXAFS experimental results.

  11. Segmental structure in banded mongoose calls.

    PubMed

    Fitch, W Tecumseh

    2012-12-03

    In complex animal vocalizations, such as bird or whale song, a great variety of songs can be produced via rearrangements of a smaller set of 'syllables', known as 'phonological syntax' or 'phonocoding' However, food or alarm calls, which function as referential signals, were previously thought to lack such combinatorial structure. A new study of calls in the banded mongoose Mungos mungo provides the first evidence of phonocoding at the level of single calls. The first portion of the call provides cues to the identity of the caller, and the second part encodes its current activity. This provides the first example known in animals of something akin to the consonants and vowels of human speech.

  12. Segmental structure in banded mongoose calls

    PubMed Central

    2012-01-01

    In complex animal vocalizations, such as bird or whale song, a great variety of songs can be produced via rearrangements of a smaller set of 'syllables', known as 'phonological syntax' or 'phonocoding' However, food or alarm calls, which function as referential signals, were previously thought to lack such combinatorial structure. A new study of calls in the banded mongoose Mungos mungo provides the first evidence of phonocoding at the level of single calls. The first portion of the call provides cues to the identity of the caller, and the second part encodes its current activity. This provides the first example known in animals of something akin to the consonants and vowels of human speech. See research article http://www.biomedcentral.com/1741-7007/10/97 PMID:23206277

  13. Concerning the Optical Absorption Band of the Hydrated Electron,

    DTIC Science & Technology

    methylene blue ) showed marked nonlinear absorption due to saturation of optical transitions, no such change was observed for hydrated electrons even though the light intensity was varied by > 10 to the 7th power up to 200 photons per hydrated electron per sq cm. Consequently the photoexcited state lifetime is estimated to be than 6 x 10 to the -12th power sec. This finding is discussed briefly in terms of three possible origins for the absorption band, namely that involving excitation to a bound excited state, as a photoionization efficiency profile or as a distribution

  14. Electronic materials with a wide band gap: recent developments

    PubMed Central

    Klimm, Detlef

    2014-01-01

    The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider E g were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity. PMID:25295170

  15. Electron charge densities at conduction-band edges of semiconductors

    SciTech Connect

    Richardson, S.L.; Cohen, M.L.; Louie, S.G.; Chelikowsky, J.R.

    1986-01-15

    We demonstrate that both the empirical pseudopotential method (EPM) and the linear combination of atomiclike orbitals (LCAO) approach are capable of producing consistent electronic charge distributions in a compound semiconductor. Since the EPM approach is known to produce total valence electron charge densities which compare well with experimental x-ray data (e.g., Si), this work serves as a further test for the LCAO method. In particular, the EPM scheme, which uses an extended plane-wave basis, and the LCAO scheme, which employs a localized Gaussian basis, are used, with the same empirical potential as input, to analyze both the total valence electron charge density and the charge density of the first conduction band at the GAMMA, L, and X k points of the Brillouin zone. These charge densities are decomposed into their s-, p-, and d-orbital contributions, and this information is used to interpret the differences in the topologies of the conduction bands at GAMMA, L, and X. Such differences are crucial for a comprehensive understanding of interstitial impurities and the response of specific band states to perturbations in compound semiconductors.

  16. Discrete Electronic Bands in Semiconductors and Insulators: Potential High-Light-Yield Scintillators

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Du, Mao-Hua

    2015-05-01

    Bulk semiconductors and insulators typically have continuous valence and conduction bands. Here, we show that valence and conduction bands of a multinary semiconductor or insulator can be split to narrow discrete bands separated by large energy gaps. This unique electronic structure is demonstrated by first-principles calculations in several quaternary elpasolite compounds, i.e., Cs2NaInBr6 , Cs2NaBiCl6 , and Tl2NaBiCl6 . The narrow discrete band structure in these quaternary elpasolites is due to the large electronegativity difference among cations and the large nearest-neighbor distances in cation sublattices. We further use Cs2NaInBr6 as an example to show that the narrow bands can stabilize self-trapped and dopant-bound excitons (in which both the electron and the hole are strongly localized in static positions on adjacent sites) and promote strong exciton emission at room temperature. The discrete band structure should further suppress thermalization of hot carriers and may lead to enhanced impact ionization, which is usually considered inefficient in bulk semiconductors and insulators. These characteristics can enable efficient room-temperature light emission in low-gap scintillators and may overcome the light-yield bottleneck in current scintillator research.

  17. Discrete Electronic Bands in Semiconductors and Insulators: Potential High-Light-Yield Scintillators

    DOE PAGES

    Shi, Hongliang; Du, Mao-Hua

    2015-05-12

    Bulk semiconductors and insulators typically have continuous valence and conduction bands. In this paper, we show that valence and conduction bands of a multinary semiconductor or insulator can be split to narrow discrete bands separated by large energy gaps. This unique electronic structure is demonstrated by first-principles calculations in several quaternary elpasolite compounds, i.e., Cs2NaInBr6, Cs2NaBiCl6, and Tl2NaBiCl6. The narrow discrete band structure in these quaternary elpasolites is due to the large electronegativity difference among cations and the large nearest-neighbor distances in cation sublattices. We further use Cs2NaInBr6 as an example to show that the narrow bands can stabilize self-trappedmore » and dopant-bound excitons (in which both the electron and the hole are strongly localized in static positions on adjacent sites) and promote strong exciton emission at room temperature. The discrete band structure should further suppress thermalization of hot carriers and may lead to enhanced impact ionization, which is usually considered inefficient in bulk semiconductors and insulators. Finally, these characteristics can enable efficient room-temperature light emission in low-gap scintillators and may overcome the light-yield bottleneck in current scintillator research.« less

  18. Discrete Electronic Bands in Semiconductors and Insulators: Potential High-Light-Yield Scintillators

    SciTech Connect

    Shi, Hongliang; Du, Mao-Hua

    2015-05-12

    Bulk semiconductors and insulators typically have continuous valence and conduction bands. In this paper, we show that valence and conduction bands of a multinary semiconductor or insulator can be split to narrow discrete bands separated by large energy gaps. This unique electronic structure is demonstrated by first-principles calculations in several quaternary elpasolite compounds, i.e., Cs2NaInBr6, Cs2NaBiCl6, and Tl2NaBiCl6. The narrow discrete band structure in these quaternary elpasolites is due to the large electronegativity difference among cations and the large nearest-neighbor distances in cation sublattices. We further use Cs2NaInBr6 as an example to show that the narrow bands can stabilize self-trapped and dopant-bound excitons (in which both the electron and the hole are strongly localized in static positions on adjacent sites) and promote strong exciton emission at room temperature. The discrete band structure should further suppress thermalization of hot carriers and may lead to enhanced impact ionization, which is usually considered inefficient in bulk semiconductors and insulators. Finally, these characteristics can enable efficient room-temperature light emission in low-gap scintillators and may overcome the light-yield bottleneck in current scintillator research.

  19. 5 CFR 9701.321 - Structure of bands.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 5 Administrative Personnel 3 2014-01-01 2014-01-01 false Structure of bands. 9701.321 Section 9701.321 Administrative Personnel DEPARTMENT OF HOMELAND SECURITY HUMAN RESOURCES MANAGEMENT SYSTEM... Structure of bands. (a) DHS may, after coordination with OPM, establish ranges of basic pay for bands, with...

  20. A Theoretical Structure of High School Concert Band Performance

    ERIC Educational Resources Information Center

    Bergee, Martin J.

    2015-01-01

    This study used exploratory (EFA) and confirmatory factor analysis (CFA) to verify a theoretical structure for high school concert band performance and to test that structure for viability, generality, and invariance. A total of 101 university students enrolled in two different bands rated two high school band performances (a "first"…

  1. A Theoretical Structure of High School Concert Band Performance

    ERIC Educational Resources Information Center

    Bergee, Martin J.

    2015-01-01

    This study used exploratory (EFA) and confirmatory factor analysis (CFA) to verify a theoretical structure for high school concert band performance and to test that structure for viability, generality, and invariance. A total of 101 university students enrolled in two different bands rated two high school band performances (a "first"…

  2. Mixed-valence effects and metamagnetism in a two-band model of correlated electrons

    NASA Astrophysics Data System (ADS)

    Acquarone, M.; SpaŁek, J.; Ray, D. K.

    1986-03-01

    We discuss both continuous and discontinuous transitions form para- to ferromagnetism within a model of electrons in double degenerate and hybridized band. We transform out rigorously the hybridization and obtain a two-band model with the component bands of substantially different width. This band structure is approximated by a band and a level placed in the center of the band. The model is solved both with and without applied magnetic field, within the Hartree-Fock approximation for the intraband and the interband interactions, and treating the Coulomb interactions on the level exactly. The self-consistent solutions for the magnetic moment and the band filling are given allowing for a redistribution of particles between the band and the level. A number of ferromagnetic and mixed-valent-type of configurations is possible, leading to a possibility of appearance of ferromagnetism in a discontinuous way and without the Stoner condition being fulfilled at the transition. Such transition cannot be described within the standard Ginzburg-Landau theory obtained from the Stoner-Wohlfarth model for a single band. The obtained result are used to give a qualitative explanation of the main results observed for the systems Co(S 1 - xSe x) 2 and CoTi 1 - xAl x.

  3. Band structure engineering in topological insulator based heterostructures.

    PubMed

    Menshchikova, T V; Otrokov, M M; Tsirkin, S S; Samorokov, D A; Bebneva, V V; Ernst, A; Kuznetsov, V M; Chulkov, E V

    2013-01-01

    The ability to engineer an electronic band structure of topological insulators would allow the production of topological materials with tailor-made properties. Using ab initio calculations, we show a promising way to control the conducting surface state in topological insulator based heterostructures representing an insulator ultrathin films on the topological insulator substrates. Because of a specific relation between work functions and band gaps of the topological insulator substrate and the insulator ultrathin film overlayer, a sizable shift of the Dirac point occurs resulting in a significant increase in the number of the topological surface state charge carriers as compared to that of the substrate itself. Such an effect can also be realized by applying the external electric field that allows a gradual tuning of the topological surface state. A simultaneous use of both approaches makes it possible to obtain a topological insulator based heterostructure with a highly tunable topological surface state.

  4. First principle study of band structure of SrMO3 perovskites

    NASA Astrophysics Data System (ADS)

    Daga, Avinash; Sharma, Smita

    2016-05-01

    First principle study of band structure calculations in the local density approximations (LDA) as well as in the generalized gradient approximations (GGA) have been used to determine the electronic structure of SrMO3 where M stands for Ti, Zr and Mo. Occurrence of band gap proves SrTiO3 and SrZrO3 to be insulating. A small band gap is observed in SrMoO3 perovskite signifies it to be metallic. Band structures are found to compare well with the available data in the literature showing the relevance of this approach. ABINIT computer code has been used to carry out all the calculations.

  5. Thermodynamic consequence of the new attribution of bands in the electronic absorption spectrum of electron donor-iodine-solvent systems

    NASA Astrophysics Data System (ADS)

    Abramov, Sergey P.

    1999-06-01

    The subject review pays attention to the peculiarities in behaviour of bands in the electronic absorption spectra of electron donor-iodine-solvent systems, the appearance of which is associated with the intermolecular interaction of molecular iodine with electron donor organic molecules. The new concept of the bands’ attribution to the isomeric equilibrium molecular charge-transfer complexes (CTCs) of CTC-I and CTC-II types is considered. The features of possible phase transitions in the solid state are discussed on the basis of the thermodynamic properties and electronic structures of the CTC-I and CTC-II in electron donor-iodine-solvent systems. The stabilisation of the CTC-II structure with the temperature lowering coincided in many cases with the electrons’ localisation in the solid state structures having charge-transfer bonds.

  6. Band Structure Asymmetry of Bilayer Graphene Revealed by Infrared Spectroscopy

    SciTech Connect

    Li, Z.Q.; Henriksen, E.A.; Jiang, Z.; Hao, Zhao; Martin, Michael C.; Kim, P.; Stormer, H.L.; Basov, Dimitri N.

    2008-12-10

    We report on infrared spectroscopy of bilayer graphene integrated in gated structures. We observe a significant asymmetry in the optical conductivity upon electrostatic doping of electrons and holes. We show that this finding arises from a marked asymmetry between the valence and conduction bands, which is mainly due to the inequivalence of the two sublattices within the graphene layer and the next-nearest-neighbor interlayer coupling. From the conductivity data, the energy difference of the two sublattices and the interlayer coupling energy are directly determined.

  7. Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer InSe

    NASA Astrophysics Data System (ADS)

    Guo, Yuzheng; Robertson, John

    2017-09-01

    We present a detailed study of the electronic structure of the layered semiconductor InSe. We calculate the band structure of the monolayer and bulk material using density functional theory, hybrid functionals, and G W . The band gap of the monolayer InSe is calculated to be 2.4 eV in screened exchange hybrid functional, close to the experimental photoluminescence gap. The electron affinities and band offsets are calculated for vertical stacked-layer heterostructures, and are found to be suitable for tunnel field effect transistors (TFETs) in combination with WS e2 or similar. The valence-band edge of InSe is calculated to lie 5.2 eV below the vacuum level, similar to that for the closed shell systems HfS e2 or SnS e2 . Hence InSe would be suitable to act as a p -type drain in the TFET. The intrinsic defects are calculated. For Se-rich layers, the Se adatom (interstitial) is found to be the most stable defect, whereas for In-rich layers, the Se vacancy is the most stable for the neutral state. Antisites tend to have energies just above those of vacancies. The Se antisite distorts towards a bond-breaking distortion as in the EL2 center of GaAs. Both substitutional donors and acceptors are calculated to be shallow, and effective dopants. They do not reconstruct to form nondoping configurations as occurs in black phosphorus. Finally, the Schottky barriers of metals on InSe are found to be strongly pinned by metal induced gap states (MIGS) at ˜0.5 eV above the valence-band edge. Any interfacial defects would lead to a stronger pinning at a similar energy. Overall, InSe is an effective semiconductor combining the good features of 2D (lack of dangling bonds, etc.) with the good features of 3D (effective doping), which few others achieve.

  8. Achieving Higher Energies via Passively Driven X-band Structures

    NASA Astrophysics Data System (ADS)

    Sipahi, Taylan; Sipahi, Nihan; Milton, Stephen; Biedron, Sandra

    2014-03-01

    Due to their higher intrinsic shunt impedance X-band accelerating structures significant gradients with relatively modest input powers, and this can lead to more compact particle accelerators. At the Colorado State University Accelerator Laboratory (CSUAL) we would like to adapt this technology to our 1.3 GHz L-band accelerator system using a passively driven 11.7 GHz traveling wave X-band configuration that capitalizes on the high shunt impedances achievable in X-band accelerating structures in order to increase our overall beam energy in a manner that does not require investment in an expensive, custom, high-power X-band klystron system. Here we provide the design details of the X-band structures that will allow us to achieve our goal of reaching the maximum practical net potential across the X-band accelerating structure while driven solely by the beam from the L-band system.

  9. Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy

    PubMed Central

    Jobst, Johannes; van der Torren, Alexander J. H.; Krasovskii, Eugene E.; Balgley, Jesse; Dean, Cory R.; Tromp, Rudolf M.; van der Molen, Sense Jan

    2016-01-01

    High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the ‘chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of. PMID:27897180

  10. Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy

    NASA Astrophysics Data System (ADS)

    Jobst, Johannes; van der Torren, Alexander J. H.; Krasovskii, Eugene E.; Balgley, Jesse; Dean, Cory R.; Tromp, Rudolf M.; van der Molen, Sense Jan

    2016-11-01

    High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the `chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.

  11. A unified perspective of complex band structure: interpretations, formulations, and applications.

    PubMed

    Reuter, Matthew G

    2017-02-08

    Complex band structure generalizes conventional band structure by also considering wavevectors with complex components. In this way, complex band structure describes both the bulk-propagating states from conventional band structure and the evanescent states that grow or decay from one unit cell to the next. Even though these latter states are excluded by translational symmetry, they become important when translational symmetry is broken via, for example, a surface or impurity. Many studies over the last 80 years have directly or indirectly developed complex band structure for an impressive range of applications, but very few discuss its fundamentals or compare its various results. In this work we build upon these previous efforts to expose the physical foundation of complex band structure, which mathematically implies its existence. We find that a material's static and dynamic electronic structure are both completely described by complex band structure. Furthermore, we show that complex band structure reflects the minimal, intrinsic information contained in the material's Hamiltonian. These realizations then provide a context for comparing and unifying the different formulations and applications of complex band structure that have been reported over the years. Ultimately, this discussion introduces the idea of examining the amount of information contained in a material's Hamiltonian so that we can find and exploit the minimal information necessary for understanding a material's properties.

  12. A unified perspective of complex band structure: interpretations, formulations, and applications

    NASA Astrophysics Data System (ADS)

    Reuter, Matthew G.

    2017-02-01

    Complex band structure generalizes conventional band structure by also considering wavevectors with complex components. In this way, complex band structure describes both the bulk-propagating states from conventional band structure and the evanescent states that grow or decay from one unit cell to the next. Even though these latter states are excluded by translational symmetry, they become important when translational symmetry is broken via, for example, a surface or impurity. Many studies over the last 80 years have directly or indirectly developed complex band structure for an impressive range of applications, but very few discuss its fundamentals or compare its various results. In this work we build upon these previous efforts to expose the physical foundation of complex band structure, which mathematically implies its existence. We find that a material’s static and dynamic electronic structure are both completely described by complex band structure. Furthermore, we show that complex band structure reflects the minimal, intrinsic information contained in the material’s Hamiltonian. These realizations then provide a context for comparing and unifying the different formulations and applications of complex band structure that have been reported over the years. Ultimately, this discussion introduces the idea of examining the amount of information contained in a material’s Hamiltonian so that we can find and exploit the minimal information necessary for understanding a material’s properties.

  13. Venus banded terrain - Tectonic models for band formation and their relationship to lithospheric thermal structure

    NASA Technical Reports Server (NTRS)

    Solomon, S. C.; Head, J. W.

    1984-01-01

    Two classes of tectonic models for the formation of band structure on Venus mountain ranges are quantitatively evaluated: folding models and extensional models. The characteristics of banded terrain on Ishtar Terra are reviewed, particularly the evidence for a tectonic origin and such important details of band geometry as the spacing between adjacent bands. The tectonic models are tested against these observed features, and it it shown that both classes of models are possible explanations of banded terrain as long as the outer elastic-brittle layer of the Venus crust is at most a few kilometers thick. A general assessment is given of hypotheses for the origin of banded terrain and of the relationship between mechanical models for band formation and the thermal structure of the Venus lithosphere.

  14. Electronic structure of FeS

    NASA Astrophysics Data System (ADS)

    Miao, J.; Niu, X. H.; Xu, D. F.; Yao, Q.; Chen, Q. Y.; Ying, T. P.; Li, S. Y.; Fang, Y. F.; Zhang, J. C.; Ideta, S.; Tanaka, K.; Xie, B. P.; Feng, D. L.; Chen, Fei

    2017-05-01

    Here we report the electronic structure of FeS, a recently identified iron-based superconductor. Our high-resolution angle-resolved photoemission spectroscopy studies show two holelike (α and β ) and two electronlike (η and δ ) Fermi pockets around the Brillouin zone center and corner, respectively, all of which exhibit moderate dispersion along kz. However, a third holelike band (γ ) is not observed, which is expected around the zone center from band calculations and is common in iron-based superconductors. Since this band has the highest renormalization factor and is known to be the most vulnerable to defects, its absence in our data is likely due to defect scattering—and yet superconductivity can exist without coherent quasiparticles in the γ band. This may help resolve the current controversy on the superconducting gap structure of FeS. Moreover, by comparing the β bandwidths of various iron chalcogenides, including FeS, FeSe1 -xSx , FeSe, and FeSe1 -xTex , we find that the β bandwidth of FeS is the broadest. However, the band renormalization factor of FeS is still quite large, when compared with the band calculations, which indicates sizable electron correlations. This explains why the unconventional superconductivity can persist over such a broad range of isovalent substitution in FeSe1 -xTex and FeSe1 -xSx .

  15. Electronic structure of lithium tetraborate

    NASA Astrophysics Data System (ADS)

    Wooten, David J.

    Due to many of its attributes, Li2B4O7 provides a possible material for incorporation as either a primary or companion material in future solid state neutron detectors. There is however a lack of fundamental characterization information regarding this useful material, particularly its electronic configuration. To address this, an investigation of Li2B4O7(110) and Li2B 4O7(100) was undertaken, utilizing photoemission and inverse photoemission spectroscopic techniques. The measured band gap depended on crystallographic direction with the band gaps ranging from 8.9+/-0.5 eV to 10.1+/-0.5 eV. The measurement yielded a density of states that qualitatively agreed with the theoretical results from model bulk band structure calculations for Li2B4O7; albeit with a larger band gap than predicted, but consistent with the known deficiencies of Local Density Approximation and Density Functional Theory calculations. The occupied states of both surfaces were extremely flat; to the degree that resolving periodic dispersion of the occupied states was inconclusive, within the resolution of the system. However, both surfaces demonstrated clear periodic dispersion within the empty states very close to theoretical Brillouin zone values. These attributes also translated to a lighter charge carrier effective mass in the unoccupied states. Of the two surfaces, Li2B4O 7(110) yielded the more consistent values in orthogonal directions for energy states. The presence of a bulk band gap surface state and image potential state in Li2B4O7(110) was indicative of a defect-free surface. The absence of both in the more polar, more dielectric Li2B4O7(100) was attributed to the presence of defects determined to be O vacancies. The results from Li2B 4O7(110) were indicative of a more stable surface than Li 2B4O7(100). In addition, Li 1s bulk and surface core level components were determined at the binding energies of -56.5+0.4 and -53.7+0.5 eV. Resonance features were observed along the [001

  16. Plasmon enhanced heterogeneous electron transfer with continuous band energy model

    NASA Astrophysics Data System (ADS)

    Zhao, Dandan; Niu, Lu; Wang, Luxia

    2017-08-01

    Photoinduced charge injection from a perylene dye molecule into the conduction band of a TiO2 system decorated by a metal nanoparticles (MNP) is studied theoretically. Utilizing the density matrix theory the charge transfer dynamics is analyzed. The continuous behavior of the TiO2 conduction band is accounted for by a Legendre polynomials expansion. The simulations consider optical excitation of the dye molecule coupled to the MNP and the subsequent electron injection into the TiO2 semiconductor. Due to the energy transfer coupling between the molecule and the MNP optical excitation and subsequent charge injection into semiconductor is strongly enhanced. The respective enhancement factor can reach values larger than 103. Effects of pulse duration, coupling strength and energetic resonances are also analyzed. The whole approach offers an efficient way to increase charge injection in dye-sensitized solar cells.

  17. Electron elevator: Excitations across the band gap via a dynamical gap state

    SciTech Connect

    Lim, Anthony; Foulkes, W. M. C.; Horsfield, A. P.; Mason, D. R.; Schleife, A.; Draeger, E. W.; Correa, A. A.

    2016-01-27

    We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. Lastly, an analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.

  18. Electron elevator: Excitations across the band gap via a dynamical gap state

    DOE PAGES

    Lim, Anthony; Foulkes, W. M. C.; Horsfield, A. P.; ...

    2016-01-27

    We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. Lastly, an analysis of the time dependence of the transition rates using coupled linear rate equations enables one of themore » excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.« less

  19. Investigation of macro deformation bands in fatigued [001] Cu single crystals by electron channeling contrast technique

    SciTech Connect

    Gong, B.; Wang, Z.; Chen, D.; Wang, Z.

    1997-11-15

    In recent years, electron channeling contrast (ECC) technique accomplished in conventional scanning electron microscopes (SEM) has received much interest in studying dislocation configuration in deformed materials, especially in cyclically deformed materials. This technique can not only provide a real and wide view of dislocation substructures conveniently, but also make it possible to establish relationship between the surface structures, such as slip bands, and the bulk dislocation structures due to the unique feature of this technique. The present study is to use ECC technique to reveal the dislocation substructures of macro deformation bands formed in fatigued [001] Cu single crystals. The ECC results will also be correlated with those of light microscopy and transmission electron microscopy (TEM) studies.

  20. Exciton Band Structure in Two-Dimensional Materials

    NASA Astrophysics Data System (ADS)

    Cudazzo, Pierluigi; Sponza, Lorenzo; Giorgetti, Christine; Reining, Lucia; Sottile, Francesco; Gatti, Matteo

    2016-02-01

    Low-dimensional materials differ from their bulk counterparts in many respects. In particular, the screening of the Coulomb interaction is strongly reduced, which can have important consequences such as the significant increase of exciton binding energies. In bulk materials the binding energy is used as an indicator in optical spectra to distinguish different kinds of excitons, but this is not possible in low-dimensional materials, where the binding energy is large and comparable in size for excitons of very different localization. Here we demonstrate that the exciton band structure, which can be accessed experimentally, instead provides a powerful way to identify the exciton character. By comparing the ab initio solution of the many-body Bethe-Salpeter equation for graphane and single-layer hexagonal boron nitride, we draw a general picture of the exciton dispersion in two-dimensional materials, highlighting the different role played by the exchange electron-hole interaction and by the electronic band structure. Our interpretation is substantiated by a prediction for phosphorene.

  1. Exciton Band Structure in Two-Dimensional Materials.

    PubMed

    Cudazzo, Pierluigi; Sponza, Lorenzo; Giorgetti, Christine; Reining, Lucia; Sottile, Francesco; Gatti, Matteo

    2016-02-12

    Low-dimensional materials differ from their bulk counterparts in many respects. In particular, the screening of the Coulomb interaction is strongly reduced, which can have important consequences such as the significant increase of exciton binding energies. In bulk materials the binding energy is used as an indicator in optical spectra to distinguish different kinds of excitons, but this is not possible in low-dimensional materials, where the binding energy is large and comparable in size for excitons of very different localization. Here we demonstrate that the exciton band structure, which can be accessed experimentally, instead provides a powerful way to identify the exciton character. By comparing the ab initio solution of the many-body Bethe-Salpeter equation for graphane and single-layer hexagonal boron nitride, we draw a general picture of the exciton dispersion in two-dimensional materials, highlighting the different role played by the exchange electron-hole interaction and by the electronic band structure. Our interpretation is substantiated by a prediction for phosphorene.

  2. Detecting Band Inversions by Measuring the Environment: Fingerprints of Electronic Band Topology in Bulk Phonon Linewidths

    NASA Astrophysics Data System (ADS)

    Saha, Kush; Légaré, Katherine; Garate, Ion

    2015-10-01

    The interplay between topological phases of matter and dissipative baths constitutes an emergent research topic with links to condensed matter, photonic crystals, cold atomic gases, and quantum information. While recent studies suggest that dissipative baths can induce topological phases in intrinsically trivial quantum materials, the backaction of topological invariants on dissipative baths is overlooked. By exploring this backaction for a centrosymmetric Dirac insulator coupled to phonons, we show that the linewidths of bulk optical phonons can reveal electronic band inversions. This result is the first known example where topological phases of an open quantum system may be detected by measuring the bulk properties of the surrounding environment.

  3. Design of an X-band accelerating structure using a newly developed structural optimization procedure

    NASA Astrophysics Data System (ADS)

    Huang, Xiaoxia; Fang, Wencheng; Gu, Qiang; Zhao, Zhentang

    2017-05-01

    An X-band high gradient accelerating structure is a challenging technology for implementation in advanced electron linear accelerator facilities. The present work discusses the design of an X-band accelerating structure for dedicated application to a compact hard X-ray free electron laser facility at the Shanghai Institute of Applied Physics, and numerous design optimizations are conducted with consideration for radio frequency (RF) breakdown, RF efficiency, short-range wakefields, and dipole/quadrupole field modes, to ensure good beam quality and a high accelerating gradient. The designed X-band accelerating structure is a constant gradient structure with a 4π/5 operating mode and input and output dual-feed couplers in a racetrack shape. The design process employs a newly developed effective optimization procedure for optimization of the X-band accelerating structure. In addition, the specific design of couplers providing high beam quality by eliminating dipole field components and reducing quadrupole field components is discussed in detail.

  4. Electronic bandstructure of semiconductor dilute bismide structures

    NASA Astrophysics Data System (ADS)

    Erucar, T.; Nutku, F.; Donmez, O.; Erol, A.

    2017-02-01

    In this work electronic band structure of dilute bismide GaAs/GaAs1-xBix quantum well structures with 1.8% and 3.75% bismuth compositions have been investigated both experimentally and theoretically. Photoluminescence (PL) measurements reveal that effective bandgap of the samples decreases approximately 65 meV per bismuth concentration. Temperature dependence of the effective bandgap is obtained to be higher for the sample with higher bismuth concentration. Moreover, both asymmetric characteristic at the low energy tail of the PL and full width at half maximum (FWHM) of PL peak increase with increasing bismuth composition as a result of increased Bi related defects located above valence band (VB). In order to explain composition dependence of the effective bandgap quantitatively, valence band anti-crossing (VBAC) model is used. Bismuth composition and temperature dependence of effective bandgap in a quantum well structure is modeled by solving Schrödinger equation and compared with experimental PL data.

  5. Band structures of 4f and 5f materials studied by angle-resolved photoelectron spectroscopy.

    PubMed

    Fujimori, Shin-ichi

    2016-04-20

    Recent remarkable progress in angle-resolved photoelectron spectroscopy (ARPES) has enabled the direct observation of the band structures of 4f and 5f materials. In particular, ARPES with various light sources such as lasers (hν ~ 7 eV) or high-energy synchrotron radiations (hν >/~ 400 eV) has shed light on the bulk band structures of strongly correlated materials with energy scales of a few millielectronvolts to several electronvolts. The purpose of this paper is to summarize the behaviors of 4f and 5f band structures of various rare-earth and actinide materials observed by modern ARPES techniques, and understand how they can be described using various theoretical frameworks. For 4f-electron materials, ARPES studies of CeMIn5(M = Rh, Ir, and Co) and YbRh2Si2 with various incident photon energies are summarized. We demonstrate that their 4f electronic structures are essentially described within the framework of the periodic Anderson model, and that the band-structure calculation based on the local density approximation cannot explain their low-energy electronic structures. Meanwhile, electronic structures of 5f materials exhibit wide varieties ranging from itinerant to localized states. For itinerant U5f compounds such as UFeGa5, their electronic structures can be well-described by the band-structure calculation assuming that all U5f electrons are itinerant. In contrast, the band structures of localized U5f compounds such as UPd3 and UO2 are essentially explained by the localized model that treats U5f electrons as localized core states. In regards to heavy fermion U-based compounds such as the hidden-order compound URu2Si2, their electronic structures exhibit complex behaviors. Their overall band structures are generally well-explained by the band-structure calculation, whereas the states in the vicinity of EF show some deviations due to electron correlation effects. Furthermore, the electronic structures of URu2Si2 in the paramagnetic and hidden-order phases are

  6. Band structures of 4f and 5f materials studied by angle-resolved photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Fujimori, Shin-ichi

    2016-04-01

    Recent remarkable progress in angle-resolved photoelectron spectroscopy (ARPES) has enabled the direct observation of the band structures of 4f and 5f materials. In particular, ARPES with various light sources such as lasers (hν ∼ 7~\\text{eV} ) or high-energy synchrotron radiations (hν ≳ 400~\\text{eV} ) has shed light on the bulk band structures of strongly correlated materials with energy scales of a few millielectronvolts to several electronvolts. The purpose of this paper is to summarize the behaviors of 4f and 5f band structures of various rare-earth and actinide materials observed by modern ARPES techniques, and understand how they can be described using various theoretical frameworks. For 4f-electron materials, ARPES studies of \\text{Ce}M\\text{I}{{\\text{n}}5} (M=\\text{Rh} , \\text{Ir} , and \\text{Co} ) and \\text{YbR}{{\\text{h}}2}\\text{S}{{\\text{i}}2} with various incident photon energies are summarized. We demonstrate that their 4f electronic structures are essentially described within the framework of the periodic Anderson model, and that the band-structure calculation based on the local density approximation cannot explain their low-energy electronic structures. Meanwhile, electronic structures of 5f materials exhibit wide varieties ranging from itinerant to localized states. For itinerant \\text{U}~5f compounds such as \\text{UFeG}{{\\text{a}}5} , their electronic structures can be well-described by the band-structure calculation assuming that all \\text{U}~5f electrons are itinerant. In contrast, the band structures of localized \\text{U}~5f compounds such as \\text{UP}{{\\text{d}}3} and \\text{U}{{\\text{O}}2} are essentially explained by the localized model that treats \\text{U}~5f electrons as localized core states. In regards to heavy fermion \\text{U} -based compounds such as the hidden-order compound \\text{UR}{{\\text{u}}2}\\text{S}{{\\text{i}}2} , their electronic structures exhibit complex behaviors. Their overall band structures

  7. Energy loss of ions at metal surfaces: Band-structure effects

    SciTech Connect

    Alducin, M.; Silkin, V.M.; Juaristi, J.I.; Chulkov, E.V.

    2003-03-01

    We study band-structure effects on the energy loss of protons scattered off the Cu (111) surface. The distance dependent stopping power for a projectile traveling parallel to the surface is calculated within the linear response theory. The self-consistent electronic response of the system is evaluated within the random-phase approximation. In order to characterize the surface band structure, the electronic single-particle wave functions and energies are obtained by solving the Schroedinger equation with a realistic one-dimensional model potential. This potential reproduces the main features of the Cu (111) surface: the energy band gap for electron motion along the surface normal, as well as the binding energy of the occupied surface state and the first image state. Comparison of our results with those obtained within the jellium model allows us to characterize the band-structure effects in the energy loss of protons interacting with the Cu (111) surface.

  8. Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

    SciTech Connect

    Li, Wei; Zhang, Qin; Kirillov, Oleg A.; Levin, Igor; Richter, Curt A.; Gundlach, David J.; Nguyen, N. V. E-mail: liangxl@pku.edu.cn; Bijesh, R.; Datta, S.; Liang, Yiran; Peng, Lian-Mao; Liang, Xuelei E-mail: liangxl@pku.edu.cn

    2014-11-24

    We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al{sub 2}O{sub 3}/InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al{sub 2}O{sub 3} conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al{sub 2}O{sub 3} valence band to the bottom of the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance.

  9. Complex structures of dense lithium: Electronic origin

    NASA Astrophysics Data System (ADS)

    Degtyareva, V. F.

    2016-11-01

    Lithium—the lightest alkali metal exhibits unexpected structures and electronic behavior at high pressures. Like the heavier alkali metals, Li is bcc at ambient pressure and transforms first to fcc (at 7.5 GPa). The post-fcc high-pressure form Li-cI 16 (at 40-60 GPa) is similar to Na-cI 16 and related to more complex structures of heavy alkalis Rb-oC52 and Cs- oC84. The other high pressure phases for Li (oC88, oC40, oC24) observed at pressures up to 130 GPa are found only in Li. The different route of Li high-pressure structures correlates with its special electronic configuration containing the only 3 electrons (at 1s and 2s levels). Crystal structures for Li are analyzed within the model of Fermi sphere-Brillouin zone interactions. Stability of post-fcc structures for Li are supported by the Hume-Rothery arguments when new diffraction plains appear close to the Fermi level producing pseudogaps near the Fermi level and decreasing the crystal energy. The filling of Brillouin-Jones zones by electron states for a given structure defines the physical properties as optical reflectivity, electrical resistivity and superconductivity. To understand the complexity of structural and physical properties of Li above 60 GPa it is necessary to assume the valence electron band overlap with the core electrons and increase the valence electron count under compression.

  10. Formation of Hubbard-like bands as a fingerprint of strong electron-electron interactions in FeSe

    NASA Astrophysics Data System (ADS)

    Watson, Matthew D.; Backes, Steffen; Haghighirad, Amir A.; Hoesch, Moritz; Kim, Timur K.; Coldea, Amalia I.; Valentí, Roser

    2017-02-01

    We use angle-resolved photoemission spectroscopy (ARPES) to explore the electronic structure of single crystals of FeSe over a wide range of binding energies and study the effects of strong electron-electron correlations. We provide evidence for the existence of "Hubbard-like bands" at high binding energies consisting of incoherent many-body excitations originating from Fe 3 d states in addition to the renormalized quasiparticle bands near the Fermi level. Many high-energy features of the observed ARPES data can be accounted for when incorporating the effects of strong local Coulomb interactions in calculations of the spectral function via dynamical mean-field theory, including the formation of a Hubbard-like band. This shows that over the energy scale of several eV, local correlations arising from the on-site Coulomb repulsion and Hund's coupling are essential for a proper understanding of the electronic structure of FeSe and other related iron-based superconductors.

  11. Comprehensive Study on Band-Gap Variations in sp3-Bonded Semiconductors: Roles of Electronic States Floating in Internal Space

    NASA Astrophysics Data System (ADS)

    Matsushita, Yu-ichiro; Oshiyama, Atsushi

    2017-05-01

    We have performed electronic structure calculations to explore the band-gap dependence on the polytype for sp3-bonded semiconducting materials, i.e., SiC, AlN, BN, GaN, Si, and diamond. In this comprehensive study, we have found that the dependence of the band gap on the polytype is common in sp3-bonded semiconductors; SiC, AlN, and BN exhibit the smallest band gaps in the 3C structure, whereas diamond does in the 2H structure. We have also clarified that the microscopic mechanism of the band-gap variations is due to peculiar electron states floating in the internal channel space at the conduction band minimum (CBM), and that the internal channel length and the electrostatic potential in the channel affect the energy level of the CBM.

  12. Investigations of the Band Structure and Morphology of Nanostructured Surfaces

    NASA Astrophysics Data System (ADS)

    Knox, Kevin R.

    2011-12-01

    In this dissertation, I examine the electronic structure of two very different types of two-dimensional systems: valence band electrons in single layer graphene and electronic states created at the vacuum interface of single crystal copper surfaces. The characteristics of both electronic systems depend intimately on the morphology of the surfaces they inhabit. Thus, in addition to discussing the respective band structures of these systems, a significant portion of this dissertation will be devoted to measurements of the surface morphology of these systems. Free-standing exfoliated monolayer graphene is an ultra-thin flexible membrane and, as such, is known to exhibit large out-of-plane deformation due to substrate and adsorbate interaction as well as thermal vibrations and, possibly, intrinsic buckling. Such crystal deformation is known to limit mobility and increase local chemical reactivity. Additionally, deformations present a measurement challenge to researchers wishing to determine the band structure by angle-resolved photoemission since they limit electron coherence in such measurements. In this dissertation, I present low energy electron microscopy and micro probe diffraction measurements, which are used to image and characterize corrugation in SiO2-supported and suspended exfoliated graphene at nanometer length scales. Diffraction line-shape analysis reveals quantitative differences in surface roughness on length scales below 20 nm which depend on film thickness and interaction with the substrate. Corrugation decreases with increasing film thickness, reflecting the increased stiffness of multilayer films. Specifically, single-layer graphene shows a markedly larger short range roughness than multilayer graphene. Due to the absence of interactions with the substrate, suspended graphene displays a smoother morphology and texture than supported graphene. A specific feature of suspended single-layer films is the dependence of corrugation on both adsorbate load

  13. The energy band structure of Si and Ge nanolayers

    NASA Astrophysics Data System (ADS)

    Wu, Xueke; Huang, Weiqi; Huang, Zhongmei; Qin, Chaojie; Tang, Yanlin

    2016-12-01

    First-principles calculation based on density functional theory (DFT) with the generalized gradient approximation (GGA) were carried out to investigate the energy band gap structure of Si and Ge nanofilms. Calculation results show that the band gaps of Si(111) and Ge(110) nanofilms are indirect structures and independent of film thickness, the band gaps of Si(110) and Ge(100) nanofilms could be transfered into the direct structure for nanofilm thickness of less than a certain value, and the band gaps of Si(100) and Ge(111) nanofilms are the direct structures in the present model thickness range (about 7 nm). Moreover, the changes of the band gaps on the Si and Ge nanofilms follow the quantum confinement effects. It will be a good way to obtain direct band gap emission in Si and Ge materials, and to develop Si and Ge laser on Si chip.

  14. Actinide electronic structure and atomic forces

    NASA Astrophysics Data System (ADS)

    Albers, R. C.; Rudin, Sven P.; Trinkle, Dallas R.; Jones, M. D.

    2000-07-01

    We have developed a new method[1] of fitting tight-binding parameterizations based on functional forms developed at the Naval Research Laboratory.[2] We have applied these methods to actinide metals and report our success using them (see below). The fitting procedure uses first-principles local-density-approximation (LDA) linear augmented plane-wave (LAPW) band structure techniques[3] to first calculate an electronic-structure band structure and total energy for fcc, bcc, and simple cubic crystal structures for the actinide of interest. The tight-binding parameterization is then chosen to fit the detailed energy eigenvalues of the bands along symmetry directions, and the symmetry of the parameterization is constrained to agree with the correct symmetry of the LDA band structure at each eigenvalue and k-vector that is fit to. By fitting to a range of different volumes and the three different crystal structures, we find that the resulting parameterization is robust and appears to accurately calculate other crystal structures and properties of interest.

  15. Tuning the electronic band-gap of fluorinated 3C-silicon carbide nanowires

    NASA Astrophysics Data System (ADS)

    Miranda Durán, Álvaro; Trejo Baños, Alejandro; Pérez, Luis Antonio; Cruz Irisson, Miguel

    The possibility of control and modulation of the electronic properties of silicon carbide nanowires (SiCNWs) by varying the wire diameter is well known. SiCNWs are particularly interesting and technologically important, due to its electrical and mechanical properties, allowing the development of materials with specific electronic features for the design of stable and robust electronic devices. Tuning the band gap by chemical surface passivation constitutes a way for the modification of the electronic band gap of these nanowires. We present, the structural and electronic properties of fluorinated SiCNWs, grown along the [111] crystallographic direction, which are investigated by first principles. We consider nanowires with six diameters, varying from 0.35 nm to 2.13 nm, and eight random covering schemes including fully hydrogen- and fluorine terminated ones. Gibbs free energy of formation and electronic properties were calculated for the different surface functionalization schemes and diameters considered. The results indicate that the stability and band gap of SiCNWs can be tuned by surface passivation with fluorine atoms This work was supported by CONACYT infrastructure project 252749 and UNAM-DGAPA-PAPIIT IN106714. A.M. would like to thank for financial support from CONACyT-Retención. Computing resources from proyect SC15-1-IR-27 of DGTIC-UNAM are acknowledged.

  16. First-principle study of energy band structure of armchair graphene nanoribbons

    NASA Astrophysics Data System (ADS)

    Ma, Fei; Guo, Zhankui; Xu, Kewei; Chu, Paul K.

    2012-07-01

    First-principle calculation is carried out to study the energy band structure of armchair graphene nanoribbons (AGNRs). Hydrogen passivation is found to be crucial to convert the indirect band gaps into direct ones as a result of enhanced interactions between electrons and nuclei at the edge boundaries, as evidenced from the shortened bond length as well as the increased differential charge density. Ribbon width usually leads to the oscillatory variation of band gaps due to quantum confinement no matter hydrogen passivated or not. Mechanical strain may change the crystal symmetry, reduce the overlapping integral of C-C atoms, and hence modify the band gap further, which depends on the specific ribbon width sensitively. In practical applications, those effects will be hybridized to determine the energy band structure and subsequently the electronic properties of graphene. The results can provide insights into the design of carbon-based devices.

  17. Three-dimensional structure of the Z band in a normal mammalian skeletal muscle

    PubMed Central

    1996-01-01

    The three-dimensional structure of the vertebrate skeletal muscle Z band reflects its function as the muscle component essential for tension transmission between successive sarcomeres. We have investigated this structure as well as that of the nearby I band in a normal, unstimulated mammalian skeletal muscle by tomographic three- dimensional reconstruction from electron micrograph tilt series of sectioned tissue. The three-dimensional Z band structure consists of interdigitating axial filaments from opposite sarcomeres connected every 18 +/- 12 nm (mean +/- SD) to one to four cross-connecting Z- filaments are observed to meet the axial filaments in a fourfold symmetric arrangement. The substantial variation in the spacing between cross-connecting Z-filament to axial filament connection points suggests that the structure of the Z band is not determined solely by the arrangement of alpha-actinin to actin-binding sites along the axial filament. The cross-connecting filaments bind to or form a "relaxed interconnecting body" halfway between the axial filaments. This filamentous body is parallel to the Z band axial filaments and is observed to play an essential role in generating the small square lattice pattern seen in electron micrographs of unstimulated muscle cross sections. This structure is absent in cross section of the Z band from muscles fixed in rigor or in tetanus, suggesting that the Z band lattice must undergo dynamic rearrangement concomitant with crossbridge binding in the A band. PMID:8636232

  18. Vorticity structuring and velocity rolls triggered by gradient shear bands.

    PubMed

    Fielding, Suzanne M

    2007-07-01

    We suggest a mechanism by which vorticity structuring and velocity rolls can form in complex fluids, triggered by the linear instability of one-dimensional gradient shear banded flow. We support this with a numerical study of the diffusive Johnson-Segalman model. In the steady vorticity structured state, the thickness of the interface between the bands remains finite in the limit of zero stress diffusivity, presenting a possible challenge to the accepted theory of shear banding.

  19. Universality of Mallmann correlations for nuclear band structures

    NASA Astrophysics Data System (ADS)

    Bucurescu, D.; Zamfir, N. V.; Cǎta-Danil, G.; Ivaşcu, M.; Mǎrginean, N.

    2008-11-01

    It is shown that the Mallmann's energy ratio correlations, first time proposed 50 years ago for the ground state bands of the even-even nuclei, are universal: all band structures in collective nuclei obey the same systematics. Based on a second order anharmonic vibrator description, parameter-free recurrence relations are proposed for Mallmann-type energy ratios, which can be used to extrapolate band structures to higher spin.

  20. Transition-metal-substituted indium thiospinels as novel intermediate-band materials: prediction and understanding of their electronic properties.

    PubMed

    Palacios, P; Aguilera, I; Sánchez, K; Conesa, J C; Wahnón, P

    2008-07-25

    Results of density-functional calculations for indium thiospinel semiconductors substituted at octahedral sites with isolated transition metals (M=Ti,V) show an isolated partially filled narrow band containing three t2g-type states per M atom inside the usual semiconductor band gap. Thanks to this electronic structure feature, these materials will allow the absorption of photons with energy below the band gap, in addition to the normal light absorption of a semiconductor. To our knowledge, we demonstrate for the first time the formation of an isolated intermediate electronic band structure through M substitution at octahedral sites in a semiconductor, leading to an enhancement of the absorption coefficient in both infrared and visible ranges of the solar spectrum. This electronic structure feature could be applied for developing a new third-generation photovoltaic cell.

  1. On the origin of a band gap in compounds of diamond-like structures.

    PubMed

    Köhler, Jürgen; Deng, Shuiquan; Lee, Changhoon; Whangbo, Myung-Hwan

    2007-03-19

    Electronic structure calculations were performed to examine the origin of a band gap present in most 18-electron half-Heusler compounds and its absence in NaTl. In these compounds of diamond-like structures, the presence or absence of a band gap is controlled by the sigma antibonding between the valence s orbitals, and the bonding characteristics of the late-main-group elements depend on the extent of their ns/np hybridization. Implications of these observations on the formal oxidation state and the covalent bonding of the transition-metal atoms in 18-electron half-Heusler and related compounds were discussed.

  2. Bi-directional evolutionary optimization for photonic band gap structures

    SciTech Connect

    Meng, Fei; Huang, Xiaodong; Jia, Baohua

    2015-12-01

    Toward an efficient and easy-implement optimization for photonic band gap structures, this paper extends the bi-directional evolutionary structural optimization (BESO) method for maximizing photonic band gaps. Photonic crystals are assumed to be periodically composed of two dielectric materials with the different permittivity. Based on the finite element analysis and sensitivity analysis, BESO starts from a simple initial design without any band gap and gradually re-distributes dielectric materials within the unit cell so that the resulting photonic crystal possesses a maximum band gap between two specified adjacent bands. Numerical examples demonstrated the proposed optimization algorithm can successfully obtain the band gaps from the first to the tenth band for both transverse magnetic and electric polarizations. Some optimized photonic crystals exhibit novel patterns markedly different from traditional designs of photonic crystals.

  3. Weak morphology dependent valence band structure of boron nitride

    NASA Astrophysics Data System (ADS)

    Zhi, Chunyi; Ueda, Shigenori; Zeng, Haibo; Wang, Xuebin; Tian, Wei; Wang, Xi; Bando, Yoshio; Golberg, Dmitri

    2013-08-01

    We report a hard X-ray photoelectron spectroscopy (HX-PES) investigation on valence band structure of Boron Nitrides (BN) having different morphologies, including nanosheets, nanotubes, and micro-sized particles. Very weak morphology/valence band structure dependence was observed. For each case, the B-N π-band overlapping with σ-band between 0 to -12.5 eV and the s-band below -15 eV were identified. No obvious morphology-induced band shifts and intensity variations were observed. First-principles calculations based on density functional theory were performed and the results were compared with the experimental data. This theoretical analysis well explains the weak morphology dependent valence band spectra of BN nanomaterials obtained during HX-PES measurements.

  4. Band structure and many body effects in graphene

    NASA Astrophysics Data System (ADS)

    Bostwick, A.; Ohta, T.; McChesney, J. L.; Seyller, T.; Horn, K.; Rotenberg, E.

    2007-09-01

    We have determined the electronic bandstructure of clean and potassium-doped single layer graphene, and fitted the graphene π bands to a one- and three-near-neighbor tight binding model. We characterized the quasiparticle dynamics using angle resolved photoemission spectroscopy. The dynamics reflect the interaction between holes and collective excitations, namely plasmons, phonons, and electron-hole pairs. Taking the topology of the bands around the Dirac energy for n-doped graphene into account, we compute the contribution to the scattering lifetimes due to electron-plasmon and electron phonon coupling.

  5. Effect of Uniaxial Strain on Band Structure of Multi-layer WS2

    NASA Astrophysics Data System (ADS)

    Troha, Conrad; Le, Duy; Rahman, Talat

    The ability to tailor band structure of a multi-layer transition metal dichalcogenide is of interest because it opens up utilizations of the material for various applications. Strain is considered a robust way to alter the electronic structure of a material. We performed calculations, using density functional theory, of band structure of multi-layer WS2 under the effects of uniaxial strain. We show that the position of the bottom of conduction band (BCB) at ∑ moves to higher, and at K to lower, energy levels under the effects of uniaxial tensile strain, making multi-layer WS2 closer to a direct band gap material. Our results suggest that uniaxial tensile strain can be used to alter band structure of multi-layer WS2 to achieve higher yield photo luminescence. This work is supported in part by U.S. Department of Energy (DOE DE-FG02-07ER15842).

  6. Band structure controlled by chiral imprinting

    NASA Astrophysics Data System (ADS)

    Castro-Garay, P.; Adrian Reyes, J.; Ramos-Garcia, R.

    2007-09-01

    Using the configuration of an imprinted cholesteric elastomer immersed in a racemic solvent, the authors find the solution of the boundary-value problem for the reflection and transmission of incident optical waves due to the elastomer. They show a significant width reduction of the reflection band for certain values of nematic penetration depth, which depends on the volume fraction of molecules from the solvent, whose handedness is preferably absorbed. The appearance of nested band gaps of both handednesses during the sorting mixed chiral process is also obtained. This suggests the design of chemically controlled optical filters and optically monitored chiral pumps.

  7. Nonrigid band shift and nonmonotonic electronic structure changes upon doping in the normal state of the pnictide high-temperature superconductor Ba (Fe1-xC ox) 2A s2

    NASA Astrophysics Data System (ADS)

    Vilmercati, Paolo; Mo, Sung-Kwan; Fedorov, Alexei; McGuire, Michael A.; Sefat, Athena; Sales, Brian; Mandrus, David; Singh, David J.; Ku, Wei; Johnston, Steve; Mannella, Norman

    2016-11-01

    We report systematic angle-resolved photoemission (ARPES) experiments using different photon polarizations and experimental geometries and find that the doping evolution of the normal state of Ba (Fe1-xC ox) 2A s2 deviates significantly from the predictions of a rigid band model. The data reveal a nonmonotonic dependence upon doping of key quantities such as band filling, bandwidth of the electron pocket, and quasiparticle coherence. Our analysis suggests that the observed phenomenology and the inapplicability of the rigid band model in Co-doped Ba122 are due to electronic correlations, and not to the either the strength of the impurity potential, or self-energy effects due to impurity scattering. Our findings indicate that the effects of doping in pnictides are much more complicated than currently believed. More generally, they indicate that a deep understanding of the evolution of the electronic properties of the normal state, which requires an understanding of the doping process, remains elusive even for the 122 iron-pnictides, which are viewed as the least correlated of the high-TC unconventional superconductors.

  8. Nonrigid band shift and nonmonotonic electronic structure changes upon doping in the normal state of the pnictide high-temperature superconductor Ba(Fe1-xCox)2As2

    DOE PAGES

    Vilmercati, Paolo; Mo, Sung -Kwan; Fedorov, Alexei; ...

    2016-11-28

    Here, we report systematic angle-resolved photoemission (ARPES) experiments using different photon polarizations and experimental geometries and find that the doping evolution of the normal state of Ba(Fe1–xCox)2As2 deviates significantly from the predictions of a rigid band model. The data reveal a nonmonotonic dependence upon doping of key quantities such as band filling, bandwidth of the electron pocket, and quasiparticle coherence. Our analysis suggests that the observed phenomenology and the inapplicability of the rigid band model in Co-doped Ba122 are due to electronic correlations, and not to the either the strength of the impurity potential, or self-energy effects due to impuritymore » scattering. Our findings indicate that the effects of doping in pnictides are much more complicated than currently believed. More generally, they indicate that a deep understanding of the evolution of the electronic properties of the normal state, which requires an understanding of the doping process, remains elusive even for the 122 iron-pnictides, which are viewed as the least correlated of the high-TC unconventional superconductors.« less

  9. Design and Additive Manufacturing of 3D Phononic Band Gap Structures Based on Gradient Based Optimization.

    PubMed

    Wormser, Maximilian; Wein, Fabian; Stingl, Michael; Körner, Carolin

    2017-09-22

    We present a novel approach for gradient based maximization of phononic band gaps. The approach is a geometry projection method combining parametric shape optimization with density based topology optimization. By this approach, we obtain, in a two dimension setting, cellular structures exhibiting relative and normalized band gaps of more than 8 and 1.6, respectively. The controlling parameter is the minimal strut size, which also corresponds with the obtained stiffness of the structure. The resulting design principle is manually interpreted into a three dimensional structure from which cellular metal samples are fabricated by selective electron beam melting. Frequency response diagrams experimentally verify the numerically determined phononic band gaps of the structures. The resulting structures have band gaps down to the audible frequency range, qualifying the structures for an application in noise isolation.

  10. Convergence of electronic bands for high performance bulk thermoelectrics.

    PubMed

    Pei, Yanzhong; Shi, Xiaoya; LaLonde, Aaron; Wang, Heng; Chen, Lidong; Snyder, G Jeffrey

    2011-05-05

    Thermoelectric generators, which directly convert heat into electricity, have long been relegated to use in space-based or other niche applications, but are now being actively considered for a variety of practical waste heat recovery systems-such as the conversion of car exhaust heat into electricity. Although these devices can be very reliable and compact, the thermoelectric materials themselves are relatively inefficient: to facilitate widespread application, it will be desirable to identify or develop materials that have an intensive thermoelectric materials figure of merit, zT, above 1.5 (ref. 1). Many different concepts have been used in the search for new materials with high thermoelectric efficiency, such as the use of nanostructuring to reduce phonon thermal conductivity, which has led to the investigation of a variety of complex material systems. In this vein, it is well known that a high valley degeneracy (typically ≤6 for known thermoelectrics) in the electronic bands is conducive to high zT, and this in turn has stimulated attempts to engineer such degeneracy by adopting low-dimensional nanostructures. Here we demonstrate that it is possible to direct the convergence of many valleys in a bulk material by tuning the doping and composition. By this route, we achieve a convergence of at least 12 valleys in doped PbTe(1-x)Se(x) alloys, leading to an extraordinary zT value of 1.8 at about 850 kelvin. Band engineering to converge the valence (or conduction) bands to achieve high valley degeneracy should be a general strategy in the search for and improvement of bulk thermoelectric materials, because it simultaneously leads to a high Seebeck coefficient and high electrical conductivity.

  11. Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2

    PubMed Central

    Waterhouse, G. I. N.; Wahab, A. K.; Al-Oufi, M.; Jovic, V.; Anjum, D. H.; Sun-Waterhouse, D.; Llorca, J.; Idriss, H.

    2013-01-01

    Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability. PMID:24108361

  12. Atomic and Electronic Structure of Solids

    NASA Astrophysics Data System (ADS)

    Kaxiras, Efthimios

    2003-01-01

    Preface; Acknowledgements; Part I. Crystalline Solids: 1. Atomic structure of crystals; 2. The single-particle approximation; 3. Electrons in crystal potential; 4. Band structure of crystals; 5. Applications of band theory; 6. Lattice vibrations; 7. Magnetic behaviour of solids; 8. Superconductivity; Part II. Defects, Non-Crystalline Solids and Finite Structures: 9. Defects I: point defects; 10. Defects II: line defects; 11. Defects III: surfaces and interfaces; 12. Non-crystalline solids; 13. Finite structures; Part III. Appendices: A. Elements of classical electrodynamics; B. Elements of quantum mechanics; C. Elements of thermodynamics; D. Elements of statistical mechanics; E. Elements of elasticity theory; F. The Madelung energy; G. Mathematical tools; H. Nobel Prize citations; I. Units and symbols; References; Index.

  13. Band structure and optical properties of silicon carbide

    NASA Astrophysics Data System (ADS)

    Gavrilenko, Vladimir I.; Frolov, Sergey I.

    1991-03-01

    Silicon carbide is an interesting high-temperature large band gap semiconquctor. it ispromising as a basical material for optoelectronic devices . The optical properties of SiC have been studied by several authors. The absrption coefficient of SiC 6H3 has been measured by Choyke and Patrick up to 4.9 eV and by Makarov to 5.8 eV. Reflection spectra of 6H, 15R, and 3C SiC in the range 3.0 to 13 eV have been stidied in . The optical constants of SiC 6H have been measured by reflectivity in the range 4 to 25 eV, The energies of direct optical transitions between subbands in the conduction band, resulting from confinement in a one dimensional superI,at,,tice, have been measured in8sveral polytypes of SiC by absorption ' and electroreflection (ER) ' The electron energy band structure (85) of SiC of1he1 halerite structure (3C SiC) has been calculated by several 1tu4r2 ' . BS of wurtzite modification of SiC have been calculated 1 in ' ' ' for 2H iC. BS of 4H and 6H SiC has been calculated by the semiempirical pseudopotential method at high-symmetry points of the Brillouin zone (BZ). Tight binding calculations of 2H SiC show valence bands which agree with experiment, but unrealistic conductive bands due to the restriction to nearest neighbours in the Hamiltonian matrix In this work we report the electroreflectance (ER) spectra of hexagonal (4H and 6H) and cubic SiC measured in the range 1.0 to 5.6 eV. Values of direct optical gps1ave been obtained from the ER spectra using a multiple oscillator model ' . BS of SiC has been calculated by the first-principles self-consistent linear muffin-tin orbital (LMTO-ASA) method (2H, 4H, and 6H SiC) and by the semiempirical pseudopotential method (3C SiC). Calculated BS parameters have been compared with experimental data measured in this work and those available in the literature.

  14. Band structure and phonon properties of lithium fluoride at high pressure

    SciTech Connect

    Panchal, J. M.; Joshi, Mitesh; Gajjar, P. N.

    2016-05-23

    High pressure structural and electronic properties of Lithium Fluoride (LiF) have been studied by employing an ab-initio pseudopotential method and a linear response scheme within the density functional theory (DFT) in conjunction with quasi harmonic Debye model. The band structure and electronic density of states conforms that the LiF is stable and is having insulator behavior at ambient as well as at high pressure up to 1 Mbar. Conclusions based on Band structure, phonon dispersion and phonon density of states are outlined.

  15. Formation of Deformation Band Structures Normal to the Shear Plane

    NASA Astrophysics Data System (ADS)

    Balasko, C. M.; Schultz, R. A.

    2001-12-01

    Recent fieldwork has shown that many of the geometric relationships previously observed in cataclastic deformation bands are based on a two dimensional view of a three dimensional structure. When the bands are viewed in the shear direction lenses and inosculating bands are seen, as first noted by Aydin [1978] and later by many others. When viewed normal to the shear direction "ladder structures" (linked mode II echelon stepovers or duplexes) and conjugate structures are seen [Davis, 1999]. Davis [1999] grouped these two geometries as different classes of deformation bands and many have interpreted the duplexes as strain localization in Riedel shear zones. Here we demonstrate an alternative explanation. When viewed normal to the shear direction, deformation bands display either mutually crosscutting ("conjugate") sets or contractional stepovers ("duplexes") between interacting mode-II bands. Our field observations reveal that the principal difference between the two is the relative distance separating the parallel echelon bands. Bands that are sufficiently close interact mechanically to promote linking bands within the stepovers. These linking bands are younger than the bounding echelon bands. Because the orientations of bands within the stepovers are the same as that of "conjugate" bands that are more widely spaced, we infer that the magnitude of stress within the stepovers was increased somewhat over background values, but that stress rotations within the stepovers were negligible. To accomplish this, the echelon deformation bands must be strong relative to the host rock and accommodate only small offsets, leading to only minor perturbations of the local stress state in their vicinity. Ladder structure, "radiator rock" [Davis, 1999], and linked echelon stepovers demonstrate a progression from distributed to more localized strain of the sandstone, with the scale dependent on the size and offset magnitude of individual bands. Occurrence of linked echelon stepovers

  16. Band structures in the nematic elastomers phononic crystals

    NASA Astrophysics Data System (ADS)

    Yang, Shuai; Liu, Ying; Liang, Tianshu

    2017-02-01

    As one kind of new intelligent materials, nematic elastomers (NEs) represent an exciting physical system that combines the local orientational symmetry breaking and the entropic rubber elasticity, producing a number of unique physical phenomena. In this paper, the potential application of NEs in the band tuning is explored. The band structures in two kinds of NE phononic crystals (PCs) are investigated. Through changing NE intrinsic parameters, the influence of the porosity, director rotation and relaxation on the band structures in NE PCs are analyzed. This work is a meaningful try for application of NEs in acoustic field and proposes a new intelligent strategy in band turning.

  17. Band-gap measurements of direct and indirect semiconductors using monochromated electrons

    SciTech Connect

    Gu Lin; Srot, Vesna; Sigle, Wilfried; Koch, Christoph; Aken, Peter van; Ruehle, Manfred; Scholz, Ferdinand; Thapa, Sarad B.; Kirchner, Christoph; Jetter, Michael

    2007-05-15

    With the development of monochromators for transmission electron microscopes, valence electron-energy-loss spectroscopy (VEELS) has become a powerful technique to study the band structure of materials with high spatial resolution. However, artifacts such as Cerenkov radiation pose a limit for interpretation of the low-loss spectra. In order to reveal the exact band-gap onset using the VEELS method, semiconductors with direct and indirect band-gap transitions have to be treated differently. For direct semiconductors, spectra acquired at thin regions can efficiently minimize the Cerenkov effects. Examples of hexagonal GaN (h-GaN) spectra acquired at different thickness showed that a correct band-gap onset value can be obtained for sample thicknesses up to 0.5 t/{lambda}. In addition, {omega}-q maps acquired at different specimen thicknesses confirm the thickness dependency of Cerenkov losses. For indirect semiconductors, the correct band-gap onset can be obtained in the dark-field mode when the required momentum transfer for indirect transition is satisfied. Dark-field VEEL spectroscopy using a star-shaped entrance aperture provides a way of removing Cerenkov effects in diffraction mode. Examples of Si spectra acquired by displacing the objective aperture revealed the exact indirect transition gap E{sub g} of 1.1 eV.

  18. The structure of band-tail states in amorphous silicon

    NASA Astrophysics Data System (ADS)

    Drabold, D. A.; Dong, Jianjun

    1997-03-01

    We compute and analyze the electronic eigenstates of the realistic and large (4096) atom model of Djordjevic, Thorpe and Wooten(B. R. Djordjevic, M. F. Thorpe and F. Wooten, Phys. Rev. B 52) 5685 (1995) in the vicinity of the gap. We discuss the structure, localization, and conductivity (from the Kubo formula) for states from midgap, well into the interior of the valence band. Tight-binding and ab initio (LDA) approximations for the states are discussed; comparisons are made to total yield photoelectron spectroscopy measurements(S. Aljisji, J. D. Cohen, S. Jin and L. Ley, Phys. Rev. Lett. 64), 2811 (1990). This is an extension of our earlier work on amorphous diamond( J. Dong and D. A. Drabold, Phys. Rev. B 54) 10284 (1996) to a-Si.

  19. Controlling the Electronic Structure of Bilayer Graphene

    NASA Astrophysics Data System (ADS)

    Ohta, Taisuke; Bostwick, Aaron; McChesney, Jessica; Seyller, Thomas; Horn, Karsten; Rotenberg, Eli

    2007-03-01

    Carbon-based materials such as carbon nanotubes, graphite intercalation compounds, fullerenes, and ultrathin graphite films exhibit many exotic phenomena such as superconductivity and an anomalous quantum Hall effect. These findings have caused renewed interest in the electronic structure of ultrathin layers of graphene: a single honeycomb carbon layer that is the building block for these materials. There is a strong motivation to incorporate graphene multilayers into atomic-scale devices, spurred on by rapid progress in their fabrication and manipulation. We have synthesized bilayer graphene thin films deposited on insulating silicon carbide and characterized their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands [1]. This control over the band structure suggests the potential application of bilayer graphene to switching functions in atomic scale electronic devices. [1] T. Ohta, A. Bostwick, T. Seyller, K. Horn, E. Rotenberg, Science, 313, 951 (2006).

  20. One-dimensional electromagnetic band gap structures formed by discharge plasmas in a waveguide

    SciTech Connect

    Arkhipenko, V. I.; Simonchik, L. V. Usachonak, M. S.; Callegari, Th.; Sokoloff, J.

    2014-09-28

    We demonstrate the ability to develop one-dimensional electromagnetic band gap structure in X-band waveguide solely by using the positive columns of glow discharges in neon at the middle pressure. Plasma inhomogeneities are distributed uniformly along a typical X-band waveguide with cross section of 23×10 mm². It is shown that electron densities larger than 10¹⁴ cm ⁻³ are needed in order to create an effective one-dimensional electromagnetic band gap structure. Some applications for using the one-dimensional electromagnetic band gap structure in waveguide as a control of microwave (broadband filter and device for variation of pulse duration) are demonstrated.

  1. Calculation of the band structure of polyguanilic acid in the presence of water and Na+ ions

    NASA Astrophysics Data System (ADS)

    Ladik, J.; Bende, A.; Bogar, F.

    2007-08-01

    Using the Hartree-Fock crystal orbital method with a combined symmetry (helix) operation, the band structure of polyguanilic acid was calculated in the presence of water and Na+ ions. The water structure was optimized with the help of molecular mechanics.The obtained band structure shows that both the valence and conduction bands are purely guanine type. The three impurity bands in the 10.66eV large gap are close to the conduction band and therefore cannot play any role in the assumed hole conduction of the system. Namely, according to detailed x-ray diffraction investigations of the nucleosomes in chromatin, there are possibilities of charge transfer from the negative sites of DNA to the positive ones in histones. Therefore most probably there is a hole conduction in DNA and an electronic one in the histone proteins.

  2. New Band Structures in Aapprox110 Neutron-Rich Nuclei

    SciTech Connect

    Zhu, S. J.; Wang, J. G.; Ding, H. B.; Gu, L.; Xu, Q.; Yeoh, E. Y.; Xiao, Z. G.; Hamilton, J. H.; Ramayya, A. V.; Hwang, J. K.; Liu, S. H.; Li, K.; Luo, Y. X.; Rasmussen, J. O.; Lee, I. Y.; Qi, B.; Meng, J.

    2010-05-12

    The high spin states of neutron-rich nuclei in Aapprox110 region have been carefully investigated by measuring prompt gamma-gamma-gamma coincident measurements populated in the spontaneous fission of {sup 252}Cf with the Gammasphere detector array. Many new collective bands have been discovered. In this proceeding paper, we introduce some interesting new band structures recently observed by our cooperative groups, that is, the one-phonon- and two-phonon gamma-vibrational bands in odd-A {sup 103}Nb, {sup 105}Mo and {sup 107}Tc, the chiral doublet bands in even-even {sup 106}Mo, {sup 110}Ru and {sup 112}Ru, and the pseudospin partner bands with in {sup 108}Tc. The characteristics of these band structures have been discussed.

  3. Experimental Benchmarking of Pu Electronic Structure

    SciTech Connect

    Tobin, J.G.; Moore, K.T.; Chung, B.W.; Wall, M.A.; Schwartz, A.J.; Ebbinghaus, B.B.; Butterfield, M.T.; Teslich, Jr., N.E.; Bliss, R.A.; Morton, S.A.; Yu, S.W.; Komesu, T.; Waddill, G.D.; van der Laan, G.; Kutepov, A.L.

    2008-10-30

    The standard method to determine the band structure of a condensed phase material is to (1) obtain a single crystal with a well defined surface and (2) map the bands with angle resolved photoelectron spectroscopy (occupied or valence bands) and inverse photoelectron spectroscopy (unoccupied or conduction bands). Unfortunately, in the case of Pu, the single crystals of Pu are either nonexistent, very small and/or having poorly defined surfaces. Furthermore, effects such as electron correlation and a large spin-orbit splitting in the 5f states have further complicated the situation. Thus, we have embarked upon the utilization of unorthodox electron spectroscopies, to circumvent the problems caused by the absence of large single crystals of Pu with well-defined surfaces. Our approach includes the techniques of resonant photoelectron spectroscopy, x-ray absorption spectroscopy, electron energy loss spectroscopy, Fano Effect measurements, and Bremstrahlung Isochromat Spectroscopy, including the utilization of micro-focused beams to probe single-crystallite regions of polycrystalline Pu samples.

  4. Experimental Benchmarking of Pu Electronic Structure

    SciTech Connect

    Tobin, J G; Moore, K T; Chung, B W; Wall, M A; Schwartz, A J; Ebbinghaus, B B; Butterfield, M T; Teslich, Jr., N E; Bliss, R A; Morton, S A; Yu, S W; Komesu, T; Waddill, G D; der Laan, G v; Kutepov, A L

    2005-10-13

    The standard method to determine the band structure of a condensed phase material is to (1) obtain a single crystal with a well defined surface and (2) map the bands with angle resolved photoelectron spectroscopy (occupied or valence bands) and inverse photoelectron spectroscopy (unoccupied or conduction bands). Unfortunately, in the case of Pu, the single crystals of Pu are either nonexistent, very small and/or having poorly defined surfaces. Furthermore, effects such as electron correlation and a large spin-orbit splitting in the 5f states have further complicated the situation. Thus, we have embarked upon the utilization of unorthodox electron spectroscopies, to circumvent the problems caused by the absence of large single crystals of Pu with well-defined surfaces. Our approach includes the techniques of resonant photoelectron spectroscopy [1], x-ray absorption spectroscopy [1,2,3,4], electron energy loss spectroscopy [2,3,4], Fano Effect measurements [5], and Bremstrahlung Isochromat Spectroscopy [6], including the utilization of micro-focused beams to probe single-crystallite regions of polycrystalline Pu samples. [2,3,6

  5. Band gap widening at random CIGS grain boundary detected by valence electron energy loss spectroscopy

    NASA Astrophysics Data System (ADS)

    Keller, Debora; Buecheler, Stephan; Reinhard, Patrick; Pianezzi, Fabian; Bissig, Benjamin; Carron, Romain; Hage, Fredrik; Ramasse, Quentin; Erni, Rolf; Tiwari, Ayodhya N.

    2016-10-01

    Cu(In,Ga) Se2 (CIGS) thin film solar cells have demonstrated very high efficiencies, but still the role of nanoscale inhomogeneities in CIGS and their impact on the solar cell performance are not yet clearly understood. Due to the polycrystalline structure of CIGS, grain boundaries are very common structural defects that are also accompanied by compositional variations. In this work, we apply valence electron energy loss spectroscopy in scanning transmission electron microscopy to study the local band gap energy at a grain boundary in the CIGS absorber layer. Based on this example, we demonstrate the capabilities of a 2nd generation monochromator that provides a very high energy resolution and allows for directly relating the chemical composition and the band gap energy across the grain boundary. A band gap widening of about 20 meV is observed at the grain boundary. Furthermore, the compositional analysis by core-loss EELS reveals an enrichment of In together with a Cu, Ga and Se depletion at the same area. The experimentally obtained results can therefore be well explained by the presence of a valence band barrier at the grain boundary.

  6. Universality of Mallmann correlations for nuclear band structures

    NASA Astrophysics Data System (ADS)

    Bucurescu, D.; Zamfir, N. V.; Căta-Danil, G.; Ivaşcu, M.; Mărginean, N.

    2008-10-01

    It is shown that the Mallmann's energy ratio correlations, for the first time observed for the ground state band of the even-even nuclei, are universal: various band structures in all collective nuclei obey the same systematics, and consequently the same spin dependence. Based on a second order anharmonic vibrator description, parameter-free recurrence relations between Mallmann-type energy ratios are deduced, which can be used to extrapolate bands to higher spin.

  7. Electronic structure of (Ga,Mn)As revisited

    NASA Astrophysics Data System (ADS)

    Kanski, J.; Ilver, L.; Karlsson, K.; Ulfat, I.; Leandersson, M.; Sadowski, J.; Di Marco, I.

    2017-02-01

    The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band versus impurity band carriers. Using angle resolved photoemission we show that the electronic structure of the (Ga,Mn)As system is significantly modified from that of GaAs throughout the valence band. Close to the Fermi energy, the presence of Mn induces a strong mixing of the bulk bands of GaAs, which results in the appearance of a highly dispersive band in the gap region of GaAs. For Mn concentrations above 1% the band reaches the Fermi level, and can thus host the delocalized holes needed for ferromagnetic coupling. Overall, our data provide a firm evidence of delocalized carriers belonging to the modified host valence band.

  8. Band structure evolution during the ultrafast ferromagnetic-paramagnetic phase transition in cobalt

    PubMed Central

    Eich, Steffen; Plötzing, Moritz; Rollinger, Markus; Emmerich, Sebastian; Adam, Roman; Chen, Cong; Kapteyn, Henry Cornelius; Murnane, Margaret M.; Plucinski, Lukasz; Steil, Daniel; Stadtmüller, Benjamin; Cinchetti, Mirko; Aeschlimann, Martin; Schneider, Claus M.; Mathias, Stefan

    2017-01-01

    The evolution of the electronic band structure of the simple ferromagnets Fe, Co, and Ni during their well-known ferromagnetic-paramagnetic phase transition has been under debate for decades, with no clear and even contradicting experimental observations so far. Using time- and spin-resolved photoelectron spectroscopy, we can make a movie on how the electronic properties change in real time after excitation with an ultrashort laser pulse. This allows us to monitor large transient changes in the spin-resolved electronic band structure of cobalt for the first time. We show that the loss of magnetization is not only found around the Fermi level, where the states are affected by the laser excitation, but also reaches much deeper into the electronic bands. We find that the ferromagnetic-paramagnetic phase transition cannot be explained by a loss of the exchange splitting of the spin-polarized bands but instead shows rapid band mirroring after the excitation, which is a clear signature of extremely efficient ultrafast magnon generation. Our result helps to understand band structure formation in these seemingly simple ferromagnetic systems and gives first clear evidence of the transient processes relevant to femtosecond demagnetization. PMID:28378016

  9. Electronic structures of geometrically restricted nanocarbons

    NASA Astrophysics Data System (ADS)

    Baskin, Artem; Kral, Petr

    2012-02-01

    We use large scale ab-initio calculations to explore the electronic structures of graphene, graphene nanoribbons, and carbon nanotubes periodically perforated with nanopores. We disclose common features in electronic structures of these porous nanocarbons (PNCs) with nanopores of different size, shapes, and localization. We develop a unified picture that permits to analytically predict and systematically characterize metal-semiconductor transitions in PNCs, allowing mapping of their electronic structures on those in pristine nanocarbons [1]. In contrast to other studies, we show that porous graphene can be metallic for certain arrangements of the pores. When we replace pores by defects (such as SW 55-77), we observe similar features in the electronic structures of the formed nanocarbons. We also study magnetic ordering in these nanocarbons and show that the position of pores/defects can influence the ordering of localized electronic spin states. These periodically modified nanocarbons with highly tunable band structures have great potential applications in electronics and optics. [1] A.I. Baskin and P. Kral, Sci. Rep.1, 36 (2011).

  10. Band structure of ABC-trilayer graphene superlattice

    NASA Astrophysics Data System (ADS)

    Uddin, Salah; Chan, K. S.

    2014-11-01

    We investigate the effect of one-dimensional periodic potentials on the low energy band structure of ABC trilayer graphene first by assuming that all the three layers have the same potential. Extra Dirac points having the same electron hole crossing energy as that of the original Dirac point are generated by superlattice potentials with equal well and barrier widths. When the potential height is increased, the numbers of extra Dirac points are increased. The dispersions around the Dirac points are not isotropic. It is noted that the dispersion along the ky direction for kx = 0 oscillates between a non-linear dispersion and a linear dispersion when the potential height is increased. When the well and barrier widths are not identical, the symmetry of the conduction and valence bands is broken. The extra Dirac points are shifted either upward or downward depending on the barrier and well widths from the zero energy, while the position of the central Dirac point oscillates with the superlattice potential height. By considering different potentials for different layers, extra Dirac points are generated not from the original Dirac points but from the valleys formed in the energy spectrum. Two extra Dirac points appear from each pair of touched valleys, so four Dirac points appeared in the spectrum at particular barrier height. By increasing the barrier height of superlattice potential two Dirac points merge into the original Dirac point. This emerging and merging of extra Dirac points is different from the equal potential case.

  11. Electronic structure interpolation via atomic orbitals.

    PubMed

    Chen, Mohan; Guo, G-C; He, Lixin

    2011-08-17

    We present an efficient scheme for accurate electronic structure interpolation based on systematically improvable optimized atomic orbitals. The atomic orbitals are generated by minimizing the spillage value between the atomic basis calculations and the converged plane wave basis calculations on some coarse k-point grid. They are then used to calculate the band structure of the full Brillouin zone using the linear combination of atomic orbitals algorithms. We find that usually 16-25 orbitals per atom can give an accuracy of about 10 meV compared to the full ab initio calculations, and the accuracy can be systematically improved by using more atomic orbitals. The scheme is easy to implement and robust, and works equally well for metallic systems and systems with complicated band structures. Furthermore, the atomic orbitals have much better transferability than Shirley's basis and Wannier functions, which is very useful for perturbation calculations.

  12. Chaos in the band structure of a soft Sinai lattice

    NASA Astrophysics Data System (ADS)

    Porter, Max D.; Barr, Aaron; Barr, Ariel; Reichl, L. E.

    2017-05-01

    We study the effect of broken spatial and dynamical symmetries on the band structure of two lattices with unit cells that are soft versions of the classic Sinai billiard. We find significant signatures of chaos in the band structure of these lattices, in energy regimes where the underlying classical unit cell undergoes a transition to chaos. Broken dynamical symmetries and the presence of chaos can diminish the feasibility of changing and controlling band structure in a wide variety of two-dimensional lattice-based devices, including two-dimensional solids, optical lattices, and photonic crystals.

  13. Designing and engineering electronic band gap of graphene nanosheet by P dopants

    NASA Astrophysics Data System (ADS)

    Mohammed, Mohammed H.

    2017-05-01

    Chemical doping is promising route to modify and control the electronic properties of graphene Nanosheet (GNS). The electronic properties of the GNS are investigated with and without various concentrations of phosphorus impurities in the various sites by using the first-principles of the density functional theory (DFT) method, which realized in Quantum Espresso packages. My founding results show that the electronic band structure of the GNS is not only depending on the concentrations of phosphorus impurities, but also depending on the geometrical pattern of phosphorus impurities in the GNS. Furthermore, I found out that there is an electronic band gap with a single phosphorus impurities and it is increased with increasing the concentrations of phosphorus impurities. Also, total energy is affected and decreased with increasing the concentrations of phosphorus impurities, which is led to make all structures are unstable and more reactive. Then, phosphorus impurities are significantly contributing to engineering, control and alter the electronic properties of the GNS, which is very important in various applications.

  14. Shell model description of band structure in 48Cr

    SciTech Connect

    Vargas, Carlos E.; Velazquez, Victor M.

    2007-02-12

    The band structure for normal and abnormal parity bands in 48Cr are described using the m-scheme shell model. In addition to full fp-shell, two particles in the 1d3/2 orbital are allowed in order to describe intruder states. The interaction includes fp-, sd- and mixed matrix elements.

  15. Enhanced power factor and reduced Lorenz number in the Wiedemann-Franz law due to pudding mold type band structures

    NASA Astrophysics Data System (ADS)

    Usui, Hidetomo; Kuroki, Kazuhiko

    2017-04-01

    We study the relationship between the shape of the electronic band structure and the thermoelectric properties. In order to study the band shape dependence of the thermoelectric properties generally, we first adopt models with band structures having the dispersion E ( k ) ˜ | k | n with n = 2, 4, and 6. We consider one-, two-, and three-dimensional systems and calculate the thermoelectric properties using the Boltzmann equation approach within the constant quasi-particle lifetime approximation. n = 2 corresponds to the usual parabolic band structure, while the band shape for n = 4 and 6 has a flat portion at the band edge, so that the density of states diverges at the bottom of the band. We call this kind of band structure the "pudding mold type band". n ≥ 4 belong to the pudding mold type band, but since the density of states diverges even for n = 2 in the one dimensional system, this is also categorized as the pudding mold type. Due to the large density of states and the rapid change of the group velocity around the band edge, the spectral conductivity of the pudding mold type band structures becomes larger than that of the usual parabolic band structures. It is found that the pudding mold type band has a coexistence of a large Seebeck coefficient and a large electric conductivity and a small Lorenz number in the Wiedemann-Franz law due to the specific band shape. We also find that the low dimensionality of the band structure can contribute to large electronic conductivity and hence a small Lorenz number. We conclude that the pudding mold type band, especially in low dimensional systems, can enhance not only the power factor but also the dimensionless figure of merit due to stronger reduction of the Lorenz number.

  16. Stacking-sequence-independent band structure and shear exfoliation of two-dimensional electride materials

    NASA Astrophysics Data System (ADS)

    Yi, Seho; Choi, Jin-Ho; Lee, Kimoon; Kim, Sung Wng; Park, Chul Hong; Cho, Jun-Hyung

    2016-12-01

    The electronic band structure of crystals is generally influenced by the periodic arrangement of their constituent atoms. Specifically, the emerging two-dimensional (2D) layered structures have shown different band structures with respect to their stacking configurations. Here, based on first-principles density-functional theory calculations, we demonstrate that the band structure of the recently synthesized 2D Ca2N electride changes little for the stacking sequence as well as the lateral interlayer shift. This intriguing invariance of band structure with respect to geometrical variations can be attributed to a complete screening of [Ca2N ] + cationic layers by anionic excess electrons delocalized between the cationic layers. The resulting weak interactions between 2D dressed cationic layers give rise to not only a shallow potential barrier for bilayer sliding but also an electron-doping-facilitated shear exfoliation. Our findings open a route for exploration of the peculiar geometry-insensitive electronic properties in 2D electride materials, which will be useful for future thermally stable electronic applications.

  17. Unfolding the band structure of non-crystalline photonic band gap materials

    NASA Astrophysics Data System (ADS)

    Tsitrin, Samuel; Williamson, Eric Paul; Amoah, Timothy; Nahal, Geev; Chan, Ho Leung; Florescu, Marian; Man, Weining

    2015-08-01

    Non-crystalline photonic band gap (PBG) materials have received increasing attention, and sizeable PBGs have been reported in quasi-crystalline structures and, more recently, in disordered structures. Band structure calculations for periodic structures produce accurate dispersion relations, which determine group velocities, dispersion, density of states and iso-frequency surfaces, and are used to predict a wide-range of optical phenomena including light propagation, excited-state decay rates, temporal broadening or compression of ultrashort pulses and complex refraction phenomena. However, band calculations for non-periodic structures employ large super-cells of hundreds to thousands building blocks, and provide little useful information other than the PBG central frequency and width. Using stereolithography, we construct cm-scale disordered PBG materials and perform microwave transmission measurements, as well as finite-difference time-domain (FDTD) simulations. The photonic dispersion relations are reconstructed from the measured and simulated phase data. Our results demonstrate the existence of sizeable PBGs in these disordered structures and provide detailed information of the effective band diagrams, dispersion relation, iso-frequency contours, and their angular dependence. Slow light phenomena are also observed in these structures near gap frequencies. This study introduces a powerful tool to investigate photonic properties of non-crystalline structures and provides important effective dispersion information, otherwise difficult to obtain.

  18. Unfolding the band structure of non-crystalline photonic band gap materials.

    PubMed

    Tsitrin, Samuel; Williamson, Eric Paul; Amoah, Timothy; Nahal, Geev; Chan, Ho Leung; Florescu, Marian; Man, Weining

    2015-08-20

    Non-crystalline photonic band gap (PBG) materials have received increasing attention, and sizeable PBGs have been reported in quasi-crystalline structures and, more recently, in disordered structures. Band structure calculations for periodic structures produce accurate dispersion relations, which determine group velocities, dispersion, density of states and iso-frequency surfaces, and are used to predict a wide-range of optical phenomena including light propagation, excited-state decay rates, temporal broadening or compression of ultrashort pulses and complex refraction phenomena. However, band calculations for non-periodic structures employ large super-cells of hundreds to thousands building blocks, and provide little useful information other than the PBG central frequency and width. Using stereolithography, we construct cm-scale disordered PBG materials and perform microwave transmission measurements, as well as finite-difference time-domain (FDTD) simulations. The photonic dispersion relations are reconstructed from the measured and simulated phase data. Our results demonstrate the existence of sizeable PBGs in these disordered structures and provide detailed information of the effective band diagrams, dispersion relation, iso-frequency contours, and their angular dependence. Slow light phenomena are also observed in these structures near gap frequencies. This study introduces a powerful tool to investigate photonic properties of non-crystalline structures and provides important effective dispersion information, otherwise difficult to obtain.

  19. Unfolding the band structure of non-crystalline photonic band gap materials

    PubMed Central

    Tsitrin, Samuel; Williamson, Eric Paul; Amoah, Timothy; Nahal, Geev; Chan, Ho Leung; Florescu, Marian; Man, Weining

    2015-01-01

    Non-crystalline photonic band gap (PBG) materials have received increasing attention, and sizeable PBGs have been reported in quasi-crystalline structures and, more recently, in disordered structures. Band structure calculations for periodic structures produce accurate dispersion relations, which determine group velocities, dispersion, density of states and iso-frequency surfaces, and are used to predict a wide-range of optical phenomena including light propagation, excited-state decay rates, temporal broadening or compression of ultrashort pulses and complex refraction phenomena. However, band calculations for non-periodic structures employ large super-cells of hundreds to thousands building blocks, and provide little useful information other than the PBG central frequency and width. Using stereolithography, we construct cm-scale disordered PBG materials and perform microwave transmission measurements, as well as finite-difference time-domain (FDTD) simulations. The photonic dispersion relations are reconstructed from the measured and simulated phase data. Our results demonstrate the existence of sizeable PBGs in these disordered structures and provide detailed information of the effective band diagrams, dispersion relation, iso-frequency contours, and their angular dependence. Slow light phenomena are also observed in these structures near gap frequencies. This study introduces a powerful tool to investigate photonic properties of non-crystalline structures and provides important effective dispersion information, otherwise difficult to obtain. PMID:26289434

  20. Band structure engineering through orbital interaction for enhanced thermoelectric power factor

    SciTech Connect

    Zhu, Hong; Sun, Wenhao; Ceder, Gerbrand; Armiento, Rickard; Lazic, Predrag

    2014-02-24

    Band structure engineering for specific electronic or optical properties is essential for the further development of many important technologies including thermoelectrics, optoelectronics, and microelectronics. In this work, we report orbital interaction as a powerful tool to finetune the band structure and the transport properties of charge carriers in bulk crystalline semiconductors. The proposed mechanism of orbital interaction on band structure is demonstrated for IV-VI thermoelectric semiconductors. For IV-VI materials, we find that the convergence of multiple carrier pockets not only displays a strong correlation with the s-p and spin-orbit coupling but also coincides with the enhancement of power factor. Our results suggest a useful path to engineer the band structure and an enticing solid-solution design principle to enhance thermoelectric performance.

  1. Control over band structure and tunneling in bilayer graphene induced by velocity engineering.

    PubMed

    Cheraghchi, Hosein; Adinehvand, Fatemeh

    2014-01-08

    The band structure and transport properties of massive Dirac fermions in bilayer graphene with velocity modulation in space are investigated in the presence of a previously created band gap. It is pointed out that velocity engineering may be considered as a factor to control the band gap of symmetry-broken bilayer graphene. The band gap is direct and independent of velocity value if the velocity modulated in two layers is set up equally. Otherwise, in the case of interlayer asymmetric velocity, not only is the band gap indirect, but also the electron-hole symmetry fails. This band gap is controllable by the ratio of the velocity modulated in the upper layer to the velocity modulated in the lower layer. In more detail, the shift of momentum from the conduction band edge to the valence band edge can be engineered by the gate bias and velocity ratio. A transfer matrix method is also elaborated to calculate the four-band coherent conductance through a velocity barrier possibly subjected to a gate bias. Electronic transport depends on the ratio of velocity modulated inside the barrier to that for surrounding regions. As a result, a quantum version of total internal reflection is observed for thick enough velocity barriers. Moreover, a transport gap originating from the applied gate bias is engineered by modulating the velocities of the carriers in the upper and lower layers.

  2. Quantum chemistry, band structures and polymers

    NASA Astrophysics Data System (ADS)

    André, Jean-Marie

    2012-06-01

    A short review of the long way from the first calculations on polyenes after the second world war to the recent electronic devices like Organic Light Emitting Diodes or Photovoltaic Cells is given. It shows how quantum chemical methods on one side and synthesis or experiments have (or should have) interacted as incentives to new methods and technologies.

  3. Band structure in Yang-Mills theories

    NASA Astrophysics Data System (ADS)

    Bachas, Constantin; Tomaras, Theodore

    2016-05-01

    We show how Yang-Mills theory on S3 × ℝ can exhibit a spectrum with continuous bands if coupled either to a topological 3-form gauge field, or to a dynamical axion with heavy Peccei-Quinn scale. The basic mechanism consists in associating winding histories to a bosonic zero mode whose role is to convert a circle in configuration space into a helix. The zero mode is, respectively, the holonomy of the 3-form field or the axion momentum. In these models different θ sectors coexist and are only mixed by (non-local) volume operators. Our analysis sheds light on, and extends Seiberg's proposal for modifying the topological sums in quantum field theories. It refutes a recent claim that B + L violation at LHC is unsuppressed.

  4. Band structure peculiarities of magnetic photonic crystals

    NASA Astrophysics Data System (ADS)

    Gevorgyan, A. H.; Golik, S. S.

    2017-10-01

    In this work we studied light diffraction in magneto-photonic crystals (MPC) having large magneto-optical activity and modulation large depth. The case of arbitrary angles between the direction of the external static magnetic field and the normal to the border of the MPC layer is considered. The problem is solved by Ambartsumian's modified layer addition method. It is found that there is a new type of non-reciprocity, namely, the relation R (α) ≠ R (- α) takes place, where R is the reflection coefficient, and α is the incidence angle. It is shown the formation of new photonic band gap (PBG) at oblique incidence of light, which is not selective for the polarization of the incident light, in the case when the external magnetic field is directed along the medium axis. Such a system can be used as: a tunable polarization filter, polarization mirror, circular (elliptical) polarizer, tunable optical diode, etc.

  5. Study on band gap structure of Fibonacci quantum superlattices by using the transfer matrix method

    NASA Astrophysics Data System (ADS)

    Ferrando, V.; Castro-Palacio, J. C.; Marí, B.; Monsoriu, J. A.

    2014-02-01

    The scattering properties of particles in a one-dimensional Fibonacci sequence based potential have been analyzed by means of the Transfer Matrix Method. The electronic band gaps are examined comparatively with those obtained using the corresponding periodic potentials. The reflection coefficient shows self-similar properties for the Fibonacci superlattices. Moreover, by using the generalized Bragg's condition, the band gaps positions are derived from the golden mean involved in the design of the superlattice structure.

  6. Characterization of electronic structure of periodically strained graphene

    SciTech Connect

    Aslani, Marjan; Garner, C. Michael Nishi, Yoshio; Kumar, Suhas; Nordlund, Dennis; Pianetta, Piero

    2015-11-02

    We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial strains in graphene in the range of 0.4% to 0.7%. Its band structure was characterized using photoemission from valance bands, shifts in the secondary electron emission, and x-ray absorption from the carbon 1s levels to the unoccupied graphene conduction bands. It was observed that relative to unstrained graphene, strained graphene had a higher work function and higher density of states in the valence and conduction bands. We measured the conductivity of the strained and unstrained graphene in response to a gate voltage and correlated the changes in their behavior to the changes in the electronic structure. From these sets of data, we propose a simple band diagram representing graphene with periodic biaxial strain.

  7. Characterization of electronic structure of periodically strained graphene

    SciTech Connect

    Aslani, Marjan; Garner, C. Michael; Kumar, Suhas; Nordlund, Dennis; Pianetta, Piero; Nishi, Yoshio

    2015-11-03

    We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial strains in graphene in the range of 0.4% to 0.7%. Its band structure was characterized using photoemission from valance bands, shifts in the secondary electron emission, and x-ray absorption from the carbon 1s levels to the unoccupied graphene conduction bands. It was observed that relative to unstrained graphene, strained graphene had a higher work function and higher density of states in the valence and conduction bands. Furthermore, we measured the conductivity of the strained and unstrained graphene in response to a gate voltage and correlated the changes in their behavior to the changes in the electronic structure. From these sets of data, we propose a simple band diagram representing graphene with periodic biaxial strain.

  8. Electronic structure of germanium selenide investigated using ultra-violet photo-electron spectroscopy

    NASA Astrophysics Data System (ADS)

    Mishra, P.; Lohani, H.; Kundu, A. K.; Patel, R.; Solanki, G. K.; Menon, Krishnakumar S. R.; Sekhar, B. R.

    2015-07-01

    The valence band electronic structure of GeSe single crystals has been investigated using angle resolved photoemission spectroscopy (ARPES) and x-ray photoelectron spectroscopy. The experimentally observed bands from ARPES, match qualitatively with our LDA-based band structure calculations along the Γ-Z, Γ-Y and Γ-T symmetry directions. The valence band maximum occurs nearly midway along the Γ-Z direction, at a binding energy of -0.5 eV, substantiating the indirect band gap of GeSe. Non-dispersive features associated with surface states and indirect transitions have been observed. The difference in hybridization of Se and Ge 4p orbitals leads to the variation of dispersion along the three symmetry directions. The predominance of the Se 4pz orbitals, evidenced from theoretical calculations, may be the cause for highly dispersive bands along the Γ-T direction. Detailed electronic structure analysis reveals the significance of the cation-anion 4p orbitals hybridization in the valence band dispersion of IV-VI semiconductors. This is the first comprehensive report of the electronic structure of a GeSe single crystal using ARPES in conjugation with theoretical band structure analysis.

  9. Electronic structure study of wide band gap magnetic semiconductor (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} nanocrystals in paramagnetic and ferromagnetic phases

    SciTech Connect

    Dwivedi, G. D.; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Joshi, Amish G.; Kumar, Shiv; Ghosh, A. K.; Chatterjee, Sandip

    2016-04-25

    X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} near Fermi-level. XMCD results indicate that Mn{sup 3+} and Mn{sup 4+} spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below T{sub C}. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

  10. High-Pressure Crystal Structure, Lattice Vibrations, and Band Structure of BiSbO4.

    PubMed

    Errandonea, Daniel; Muñoz, Alfonso; Rodríguez-Hernández, Placida; Gomis, Oscar; Achary, S Nagabhusan; Popescu, Catalin; Patwe, Sadeque J; Tyagi, Avesh K

    2016-05-16

    The high-pressure crystal structure, lattice-vibrations, and electronic band structure of BiSbO4 were studied by ab initio simulations. We also performed Raman spectroscopy, infrared spectroscopy, and diffuse-reflectance measurements, as well as synchrotron powder X-ray diffraction. High-pressure X-ray diffraction measurements show that the crystal structure of BiSbO4 remains stable up to at least 70 GPa, unlike other known MTO4-type ternary oxides. These experiments also give information on the pressure dependence of the unit-cell parameters. Calculations properly describe the crystal structure of BiSbO4 and the changes induced by pressure on it. They also predict a possible high-pressure phase. A room-temperature pressure-volume equation of state is determined, and the effect of pressure on the coordination polyhedron of Bi and Sb is discussed. Raman- and infrared-active phonons were measured and calculated. In particular, calculations provide assignments for all the vibrational modes as well as their pressure dependence. In addition, the band structure and electronic density of states under pressure were also calculated. The calculations combined with the optical measurements allow us to conclude that BiSbO4 is an indirect-gap semiconductor, with an electronic band gap of 2.9(1) eV. Finally, the isothermal compressibility tensor for BiSbO4 is given at 1.8 GPa. The experimental (theoretical) data revealed that the direction of maximum compressibility is in the (0 1 0) plane at ∼33° (38°) to the c-axis and 47° (42°) to the a-axis. The reliability of the reported results is supported by the consistency between experiments and calculations.

  11. Stacking dependent electronic structures of transition metal dichalcogenides heterobilayer

    NASA Astrophysics Data System (ADS)

    Lee, Yea-Lee; Park, Cheol-Hwan; Ihm, Jisoon

    The systematic study of the electronic structures and optical properties of the transition metal dichalcogenides (TMD) heterobilayers can significantly improve the designing of new electronic and optoelectronic devices. Here, we theoretically study the electronic structures and optical properties of TMD heterobilayers using the first-principles methods. The band structures of TMD heterobilayer are shown to be determined by the band alignments of the each layer, the weak interlayer interactions, and angle dependent stacking patterns. The photoluminescence spectra are investigated using the calculated band structures, and the optical absorption spectra are examined by the GW approximations including the electron-hole interaction through the solution of the Bethe-Salpeter equation. It is expected that the weak interlayer interaction gives rise to the substantial interlayer optical transition which will be corresponding to the interlayer exciton.

  12. Locally resonant periodic structures with low-frequency band gaps

    NASA Astrophysics Data System (ADS)

    Cheng, Zhibao; Shi, Zhifei; Mo, Y. L.; Xiang, Hongjun

    2013-07-01

    Presented in this paper are study results of dispersion relationships of periodic structures composited of concrete and rubber, from which the frequency band gap can be found. Two models with fixed or free boundary conditions are proposed to approximate the bound frequencies of the first band gap. Studies are conducted to investigate the low-frequency and directional frequency band gaps for their application to engineering. The study finds that civil engineering structures can be designed to block harmful waves, such as earthquake disturbance.

  13. Active Narrow-Band Vibration Isolation of Large Engineering Structures

    NASA Technical Reports Server (NTRS)

    Rahman, Zahidul; Spanos, John

    1994-01-01

    We present a narrow-band tracking control method using a variant of the Least Mean Squares (LMS) algorithm to isolate slowly changing periodic disturbances from engineering structures. The advantage of the algorithm is that it has a simple architecture and is relatively easy to implement while it can isolate disturbances on the order of 40-50 dB over decades of frequency band. We also present the results of an experiment conducted on a flexible truss structure. The average disturbance rejection achieved is over 40 dB over the frequency band of 5 Hz to 50 Hz.

  14. Active Narrow-Band Vibration Isolation of Large Engineering Structures

    NASA Technical Reports Server (NTRS)

    Rahman, Zahidul; Spanos, John

    1994-01-01

    We present a narrow-band tracking control method using a variant of the Least Mean Squares (LMS) algorithm to isolate slowly changing periodic disturbances from engineering structures. The advantage of the algorithm is that it has a simple architecture and is relatively easy to implement while it can isolate disturbances on the order of 40-50 dB over decades of frequency band. We also present the results of an experiment conducted on a flexible truss structure. The average disturbance rejection achieved is over 40 dB over the frequency band of 5 Hz to 50 Hz.

  15. Shape dependence of band-edge exciton fine structure in CdSe nanocrystals.

    PubMed

    Zhao, Qingzhong; Graf, Peter A; Jones, Wesley B; Franceschetti, Alberto; Li, Jingbo; Wang, Lin-Wang; Kim, Kwiseon

    2007-11-01

    The band-edge exciton fine structure of wurtzite CdSe nanocrystals is investigated by a plane-wave pseudopotential method that includes spin-orbit coupling, screened electron-hole Coulomb interactions, and exchange interactions. Large-scale, systematic simulations have been carried out on quantum dots, nanorods, nanowires, and nanodisks. The size and shape dependence of the exciton fine structure is explored over the whole diameter-length configuration space and is explained by the interplay of quantum confinement, intrinsic crystal-field splitting, and electron-hole exchange interactions. Our results show that the band-edge exciton fine structure of CdSe nanocrystals is determined by the origin of their valence-band single-particle wave functions. Nanocrystals where the valence-band maximum originates from the bulk A band have a "dark" ground-state exciton. Nanocrystals where the valence-band maximum is derived from the bulk B band have a "quasi-bright" ground-state exciton. Thus, the diameter-length configuration map can be divided into two regions, corresponding to dark and quasi-bright ground-state excitons. We find that the dark/quasi-bright ground-state exciton crossover is not only diameter-dependent but also length-dependent, and it is characterized by a curve in the two-parameter space of diameter and length.

  16. Electronic crosstalk in Terra MODIS thermal emissive bands

    NASA Astrophysics Data System (ADS)

    Sun, Junqiang; Madhavan, Sriharsha; Xiong, Xiaoxiong; Wang, Menghua

    2015-09-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is a legacy Earth remote sensing instrument in the National Aeronautics and Space Administration (NASA) Earth Observing System (EOS). The first MODIS instrument was launched in December 1999 on board the Terra spacecraft. MODIS has 36 bands, among which bands 20-25 and bands 27-36 are thermal emissive bands covering a wavelength range from 3.7μm to 14.2μm. It has been found that there are severe contaminations in Terra bands 27-30 (6.7 μm - 9.73 μm) due to crosstalk of signals among themselves. The crosstalk effect induces strong striping artifacts in the Earth View (EV) images and causes large long-term drifts in the EV brightness temperature (BT) in these bands. An algorithm using a linear approximation derived from on-orbit lunar observations has been developed to correct the crosstalk effect for them. It was demonstrated that the crosstalk correction can substantially reduce the striping noise in the EV images and significantly remove the long-term drifts in the EV BT in the Long Wave InfraRed (LWIR) water vapor channels (bands 27-28). In this paper, the crosstalk correction algorithm previously developed is applied to correct the crosstalk effect in the remaining LWIR bands 29 and 30. The crosstalk correction successfully reduces the striping artifact in the EV images and removes long-term drifts in the EV BT in bands 29-30 as was done similarly for bands 27-28. The crosstalk correction algorithm can thus substantially improve both the image quality and the radiometric accuracy of the Level 1B (L1B) products of the LWIR PV bands, bands 27-30. From this study it is also understood that other Terra MODIS thermal emissive bands are contaminated by the crosstalk effect and that the algorithm can be applied to these bands for crosstalk correction.

  17. Graphene band structure and its 2D Raman mode

    NASA Astrophysics Data System (ADS)

    Narula, Rohit; Reich, Stephanie

    2014-08-01

    High-precision simulations are used to generate the 2D Raman mode of graphene under a range of screening conditions and laser energies EL. We reproduce the decreasing trend of the 2D mode FWHM vs EL and the nearly linearly increasing dispersion ∂ω2D/∂EL seen experimentally in freestanding (unscreened) graphene, and propose relations between these experimentally accessible quantities and the local, two-dimensional gradients |∇ | of the electronic and TO phonon bands. In light of state-of-the-art electronic structure calculations that acutely treat the long-range e-e interactions of isolated graphene and its experimentally observed 2D Raman mode, our calculations determine a 40% greater slope of the TO phonons about K than given by explicit phonon measurements performed in graphite or GW phonon calculations in graphene. We also deduce the variation of the broadening energy γ [EL] for freestanding graphene and find a nominal value γ ˜140 meV, showing a gradually increasing trend for the range of frequencies available experimentally.

  18. Electronic Power Conditioner for Ku-band Travelling Wave Tube

    NASA Astrophysics Data System (ADS)

    Kowstubha, Palle; Krishnaveni, K.; Ramesh Reddy, K.

    2016-07-01

    A highly sophisticated regulated power supply is known as electronic power conditioner (EPC) is required to energise travelling wave tubes (TWTs), which are used as RF signal amplifiers in satellite payloads. The assembly consisting of TWT and EPC together is known as travelling wave tube amplifier (TWTA). EPC is used to provide isolated and conditioned voltage rails with tight regulation to various electrodes of TWT and makes its RF performance independent of solar bus variations which are caused due to varying conditions of eclipse and sunlit. The payload mass and their power consumption is mainly due to the existence of TWTAs that represent about 35 % of total mass and about 70-90 % (based on the type of satellite application) of overall dc power consumption. This situation ensures a continuous improvement in the design of TWTAs and their associated EPCs to realize more efficient and light products. Critical technologies involved in EPCs are design and configuration, closed loop regulation, component and material selection, energy limiting of high voltage (HV) outputs and potting of HV card etc. This work addresses some of these critical technologies evolved in realizing and testing the state of art of EPC and it focuses on the design of HV supply with a HV and high power capability, up to 6 kV and 170 WRF, respectively required for a space TWTA. Finally, an experimental prototype of EPC with a dc power of 320 W provides different voltages required by Ku-band TWT in open loop configuration.

  19. Electronic Power Conditioner for Ku-band Travelling Wave Tube

    NASA Astrophysics Data System (ADS)

    Kowstubha, Palle; Krishnaveni, K.; Ramesh Reddy, K.

    2017-04-01

    A highly sophisticated regulated power supply is known as electronic power conditioner (EPC) is required to energise travelling wave tubes (TWTs), which are used as RF signal amplifiers in satellite payloads. The assembly consisting of TWT and EPC together is known as travelling wave tube amplifier (TWTA). EPC is used to provide isolated and conditioned voltage rails with tight regulation to various electrodes of TWT and makes its RF performance independent of solar bus variations which are caused due to varying conditions of eclipse and sunlit. The payload mass and their power consumption is mainly due to the existence of TWTAs that represent about 35 % of total mass and about 70-90 % (based on the type of satellite application) of overall dc power consumption. This situation ensures a continuous improvement in the design of TWTAs and their associated EPCs to realize more efficient and light products. Critical technologies involved in EPCs are design and configuration, closed loop regulation, component and material selection, energy limiting of high voltage (HV) outputs and potting of HV card etc. This work addresses some of these critical technologies evolved in realizing and testing the state of art of EPC and it focuses on the design of HV supply with a HV and high power capability, up to 6 kV and 170 WRF, respectively required for a space TWTA. Finally, an experimental prototype of EPC with a dc power of 320 W provides different voltages required by Ku-band TWT in open loop configuration.

  20. Electron mean free path and conduction-band density-of-states in solid methane as determined from low-energy electron transmission experiments

    NASA Astrophysics Data System (ADS)

    Jay-Gerin, J.-P.; Plenkiewicz, B.; Plenkiewicz, P.; Perluzzo, G.; Sanche, L.

    1985-09-01

    Recently, Plenkiewicz et al. developed a theoretical model for analyzing the current I t transmitted by a thin dielectric film as a function of incident electron energy E. The purpose of this paper is to apply this model to the analysis of recent I t( E) results for solid methane. The analysis permits the determination of both the electron mean free path as a function of energy and the electronic conduction-band density-of-states in the quasi-elastic scattering region. The differences between our results and Kunz's solid methane band structure calculations are also discussed.

  1. Automated effective band structures for defective and mismatched supercells

    NASA Astrophysics Data System (ADS)

    Brommer, Peter; Quigley, David

    2014-12-01

    In plane-wave density functional theory codes, defects and incommensurate structures are usually represented in supercells. However, interpretation of E versus k band structures is most effective within the primitive cell, where comparison to ideal structures and spectroscopy experiments are most natural. Popescu and Zunger recently described a method to derive effective band structures (EBS) from supercell calculations in the context of random alloys. In this paper, we present bs_sc2pc, an implementation of this method in the CASTEP code, which generates an EBS using the structural data of the supercell and the underlying primitive cell with symmetry considerations handled automatically. We demonstrate the functionality of our implementation in three test cases illustrating the efficacy of this scheme for capturing the effect of vacancies, substitutions and lattice mismatch on effective primitive cell band structures.

  2. Automated effective band structures for defective and mismatched supercells.

    PubMed

    Brommer, Peter; Quigley, David

    2014-12-03

    In plane-wave density functional theory codes, defects and incommensurate structures are usually represented in supercells. However, interpretation of E versus k band structures is most effective within the primitive cell, where comparison to ideal structures and spectroscopy experiments are most natural. Popescu and Zunger recently described a method to derive effective band structures (EBS) from supercell calculations in the context of random alloys. In this paper, we present bs_sc2pc, an implementation of this method in the CASTEP code, which generates an EBS using the structural data of the supercell and the underlying primitive cell with symmetry considerations handled automatically. We demonstrate the functionality of our implementation in three test cases illustrating the efficacy of this scheme for capturing the effect of vacancies, substitutions and lattice mismatch on effective primitive cell band structures.

  3. Quantitative study of band structure in BaTiO3 particles with vacant ionic sites

    NASA Astrophysics Data System (ADS)

    Oshime, Norihiro; Kano, Jun; Ikeda, Naoshi; Teranishi, Takashi; Fujii, Tatsuo; Ueda, Takeji; Ohkubo, Tomoko

    2016-10-01

    Levels of the conduction band minimum and the valence band maximum in ion-deficient BaTiO3 particles were investigated with optical band gap and ionization energy measurements. Though it is known that the quantification of the band structure in an insulator is difficult, due to the poor electrical conductivity of BaTiO3, systematic variation in the band energy levels was found that correlated with the introduction of vacancies. Photoelectron yield spectroscopy provided direct observation of the occupancy level of electrons, which is altered by the presence of oxygen and barium vacancies. In addition, the conduction band deviation from the vacuum level was determined by optical reflectance spectroscopy. Our results show that: (1) Introduction of oxygen vacancies forms a donor level below the conduction band. (2) The conduction band is shifted to a lower level by a larger number of oxygen vacancies, while the valence band also shifts to a lower level, due to the reduction in the density of O 2p orbitals. (3) Introduction of barium vacancies widens the band gap. Since barium vacancies can induce a small number of oxygen vacancies with accompanying charge compensation, this behavior suppresses any large formation of donor levels in the gap states, indicating that cation vacancies can control the number of both donor and acceptor levels.

  4. Effects of electron-impurity scattering on density of states in silicene: Impurity bands and band-gap narrowing

    NASA Astrophysics Data System (ADS)

    Liu, S. Y.; Zeng, Y. C.; Lei, X. L.

    2016-12-01

    Considering the interband correlation, we present a generalized multiple-scattering approach of Green's function to investigate the effects of electron-impurity scattering on the density of states in silicene at zero temperature. The reduction of energy gaps in the case of relatively high chemical potential and the transformation of split-off impurity bands into band tails for low chemical potential are found. The dependency of optical conductivity on the impurity concentration is also discussed for frequency within the terahertz regime.

  5. Deformed band structures at high spin in 200Tl

    NASA Astrophysics Data System (ADS)

    Bhattacharya, Soumik; Bhattacharyya, S.; Das Gupta, S.; Pai, H.; Mukherjee, G.; Palit, R.; Xu, F. R.; Wu, Q.; Shrivastava, A.; Asgar, Md. A.; Banik, R.; Bhattacharjee, T.; Chanda, S.; Chatterjee, A.; Goswami, A.; Nanal, V.; Pandit, S. K.; Saha, S.; Sethi, J.; Roy, T.; Thakur, S.

    2017-01-01

    High-spin band structures of 200Tl have been studied by γ -ray spectroscopic methods using the 198Pt(7Li,5 n )200Tl reaction at 45 MeV of beam energy. The level scheme of 200Tl has been extended significantly and several new band structures have been established with the observation of 60 new transitions. The π h9 /2⊗ν i13 /2 oblate band has been extended beyond the particle alignment frequencies. The band structures and the other excited states have been compared with the neighboring odd-odd Tl isotopes. Total Routhian surface calculations have been performed to study the deformation and shape changes as a function of spin in this nucleus. These calculations could reproduce the particle alignment frequency and suggest that the neutron pair alignment in ν i13 /2 orbital induces γ softness in 200Tl.

  6. Evidence of Eu{sup 2+} 4f electrons in the valence band spectra of EuTiO{sub 3} and EuZrO{sub 3}

    SciTech Connect

    Kolodiazhnyi, T.; Valant, M.; Williams, J. R.; Bugnet, M.; Botton, G. A.; Ohashi, N.; Sakka, Y.

    2012-10-15

    We report on optical band gap and valence electronic structure of two Eu{sup 2+}-based perovskites, EuTiO{sub 3} and EuZrO{sub 3} as revealed by diffuse optical scattering, electron energy loss spectroscopy, and valence-band x-ray photoelectron spectroscopy. The data show good agreement with the first-principles studies in which the top of the valence band structure is formed by the narrow Eu 4f{sup 7} electron band. The O 2p band shows the features similar to those of the Ba(Sr)TiO{sub 3} perovskites except that it is shifted to higher binding energies. Appearance of the Eu{sup 2+} 4f{sup 7} band is a reason for narrowing of the optical band gap in the title compounds as compared to their Sr-based analogues.

  7. Evidence of Eu2+ 4f electrons in the valence band spectra of EuTiO3 and EuZrO3

    NASA Astrophysics Data System (ADS)

    Kolodiazhnyi, T.; Valant, M.; Williams, J. R.; Bugnet, M.; Botton, G. A.; Ohashi, N.; Sakka, Y.

    2012-10-01

    We report on optical band gap and valence electronic structure of two Eu2+-based perovskites, EuTiO3 and EuZrO3 as revealed by diffuse optical scattering, electron energy loss spectroscopy, and valence-band x-ray photoelectron spectroscopy. The data show good agreement with the first-principles studies in which the top of the valence band structure is formed by the narrow Eu 4f7 electron band. The O 2p band shows the features similar to those of the Ba(Sr)TiO3 perovskites except that it is shifted to higher binding energies. Appearance of the Eu2+ 4f7 band is a reason for narrowing of the optical band gap in the title compounds as compared to their Sr-based analogues.

  8. Electronic structure of disordered conjugated polymers: Polythiophenes

    SciTech Connect

    Vukmirovic, Nenad; Wang, Lin-Wang

    2008-11-26

    Electronic structure of disordered semiconducting conjugated polymers was studied. Atomic structure was found from a classical molecular dynamics simulation and the charge patching method was used to calculate the electronic structure with the accuracy similar to the one of density functional theory in local density approximation. The total density of states, the local density of states at different points in the system and the wavefunctions of several states around the gap were calculated in the case of poly(3-hexylthiophene) (P3HT) and polythiophene (PT) systems to gain insight into the origin of disorder in the system, the degree of carrier localization and the role of chain interactions. The results indicated that disorder in the electronic structure of alkyl substituted polythiophenes comes from disorder in the conformation of individualchains, while in the case of polythiophene there is an additional contribution due to disorder in the electronic coupling between the chains. Each of the first several wavefunctions in the conduction and valence band of P3HT is localized over several rings of a single chain. It was shown that the localization can be caused in principle both by ring torsions and chain bending, however the effect of ring torsions is much stronger. PT wavefunctions are more complicated due to larger interchain electronic coupling and are not necessarily localized on a single chain.

  9. First principle study of band structure of SrMO{sub 3} perovskites

    SciTech Connect

    Daga, Avinash; Sharma, Smita

    2016-05-06

    First principle study of band structure calculations in the local density approximations (LDA) as well as in the generalized gradient approximations (GGA) have been used to determine the electronic structure of SrMO{sub 3} where M stands for Ti, Zr and Mo. Occurrence of band gap proves SrTiO{sub 3} and SrZrO{sub 3} to be insulating. A small band gap is observed in SrMoO{sub 3} perovskite signifies it to be metallic. Band structures are found to compare well with the available data in the literature showing the relevance of this approach. ABINIT computer code has been used to carry out all the calculations.

  10. Valence and conduction band structure of the quasi-two-dimensional semiconductor Sn S2

    NASA Astrophysics Data System (ADS)

    Racke, David A.; Neupane, Mahesh R.; Monti, Oliver L. A.

    2016-02-01

    We present the momentum-resolved photoemission spectroscopy of both the valence and the conduction band region in the quasi-two-dimensional van der Waals-layered indirect band gap semiconductor Sn S2 . Using a combination of angle-resolved ultraviolet photoemission and angle-resolved two-photon photoemission (AR-2PPE) spectroscopy, we characterize the band structure of bulk Sn S2 . Comparison with density functional theory calculations shows excellent quantitative agreement in the valence band region and reveals several localized bands that likely originate from defects such as sulfur vacancies. Evidence for a moderate density of defects is also observed by AR-2PPE in the conduction band region, leading to localized bands not present in the computational results. The energetic structure and dispersion of the conduction bands is captured well by the computational treatment, with some quantitative discrepancies remaining. Our results provide a broader understanding of the electronic structure of Sn S2 in particular and van der Waals-layered semiconductors in general.

  11. Development of X-Band Dielectric-Loaded Accelerating Structures

    SciTech Connect

    Gold, S. H.; Jing, C.; Kanareykin, A.; Gai, W.; Konecny, R.; Power, J. G.; Kinkead, A. K.

    2010-11-04

    This paper presents a progress report on the development and testing of X-band dielectric-loaded accelerating structures. Recent tests on several quartz DLA structures with different inner diameters are reported. Designs for gap-free DLA structures are presented. Also, planned new experiments are discussed, including higher gradient traveling-wave and standing-wave structures and special grooved structures for multipactor suppression.

  12. Band structures of nonmagnetic transition-metal oxides: PdO and PtO

    SciTech Connect

    Hass, K.C. ); Carlsson, A.E. )

    1992-08-15

    The electronic band structures of PdO and PtO are calculated using the augmented-spherical-wave method and the local-density approximation. Our results are consistent with the widely held view of these materials as conventional band insulators with the crystal-field splitting of metal {ital d} states primarily responsible for gap formation. A significant role for correlation effects as well cannot be ruled out. The predicted valence-band structure for PdO agrees well with published photoemission data. The electronic structure of PtO is qualitatively similar. In both cases the calculated gap is direct and occurs at the {ital M} point of the Brillouin zone. The magnitude of the gap is found to be larger in PtO, which we attribute to the more relativistic nature of Pt compared to Pd.

  13. Two-zone heterogeneous structure within shear bands of a bulk metallic glass

    SciTech Connect

    Shao, Yang; Yao, Kefu; Liu, Xue; Li, Mo

    2013-10-21

    Shear bands, the main plastic strain carrier in metallic glasses, are severely deformed regions often considered as disordered and featureless. Here we report the observations of a sandwich-like heterogeneous structure inside shear bands in Pd{sub 40.5}Ni{sub 40.5}P{sub 19} metallic glass sample after plastic deformation by high-resolution transmission electron microscopy. The experimental results suggest a two-step plastic deformation mechanism with corresponding microstructure evolution at atomic scale, which may intimately connected to the stability of the shear band propagation and the overall plastic deformability.

  14. Electronic structure of one-dimensional cuprates

    NASA Astrophysics Data System (ADS)

    Maiti, K.; Sarma, D. D.; Mizokawa, T.; Fujimori, A.

    1998-01-01

    We have investigated the electronic structures of one-dimensional antiferromagnetic insulators Ca2CuO3 and Sr2CuO3 combining electron spectroscopic measurements and various calculations. While calculations based on a local-spin-density approach for the real magnetic structures fail to yield an insulating state, from our experiments we estimate the intrinsic band gaps in these materials to be about 1.7 eV (Ca2CuO3) and 1.5 eV (Sr2CuO3). Analysis of the core-level and the valence-band spectra in terms of model many-body Hamiltonians show that the charge-transfer energy Δ for these one-dimensional systems is significantly smaller than other cuprates, such as the high-Tc oxides (two-dimensional) and CuO (three-dimensional). Such a small Δ suggests the presence of the bare upper Hubbard band within the oxygen p bandwidth and thus provides an example of a correlated covalent insulator.

  15. Modeling the electronic properties of GaAs polytype nanostructures: Impact of strain on the conduction band character

    NASA Astrophysics Data System (ADS)

    Marquardt, Oliver; Ramsteiner, Manfred; Corfdir, Pierre; Geelhaar, Lutz; Brandt, Oliver

    2017-06-01

    We study the electronic properties of GaAs nanowires composed of both the zinc-blende and wurtzite modifications using a ten-band k .p model. In the wurtzite phase, two energetically close conduction bands are of importance for the confinement and the energy levels of the electron ground state. These bands form two intersecting potential landscapes for electrons in zinc-blende/wurtzite nanostructures. The energy difference between the two bands depends sensitively on strain, such that even small strains can reverse the energy ordering of the two bands. This reversal may already be induced by the non-negligible lattice mismatch between the two crystal phases in polytype GaAs nanostructures, a fact that was ignored in previous studies of these structures. We present a systematic study of the influence of intrinsic and extrinsic strain on the electron ground state for both purely zinc-blende and wurtzite nanowires as well as for polytype superlattices. The coexistence of the two conduction bands and their opposite strain dependence results in complex electronic and optical properties of GaAs polytype nanostructures. In particular, both the energy and the polarization of the lowest intersubband transition depends on the relative fraction of the two crystal phases in the nanowire.

  16. The Development of Layered Photonic Band Gap Structures Using a Micro-Transfer Molding Technique

    SciTech Connect

    Sutherland, Kevin Jerome

    2001-01-01

    Photonic band gap (PBG) crystals are periodic dielectric structures that manipulate electromagnetic radiation in a manner similar to semiconductor devices manipulating electrons. Whereas a semiconductor material exhibits an electronic band gap in which electrons cannot exist, similarly, a photonic crystal containing a photonic band gap does not allow the propagation of specific frequencies of electromagnetic radiation. This phenomenon results from the destructive Bragg diffraction interference that a wave propagating at a specific frequency will experience because of the periodic change in dielectric permitivity. This gives rise to a variety of optical applications for improving the efficiency and effectiveness of opto-electronic devices. These applications are reviewed later. Several methods are currently used to fabricate photonic crystals, which are also discussed in detail. This research involves a layer-by-layer micro-transfer molding ({mu}TM) and stacking method to create three-dimensional FCC structures of epoxy or titania. The structures, once reduced significantly in size can be infiltrated with an organic gain media and stacked on a semiconductor to improve the efficiency of an electronically pumped light-emitting diode. Photonic band gap structures have been proven to effectively create a band gap for certain frequencies of electro-magnetic radiation in the microwave and near-infrared ranges. The objective of this research project was originally two-fold: to fabricate a three dimensional (3-D) structure of a size scaled to prohibit electromagnetic propagation within the visible wavelength range, and then to characterize that structure using laser dye emission spectra. As a master mold has not yet been developed for the micro transfer molding technique in the visible range, the research was limited to scaling down the length scale as much as possible with the current available technology and characterizing these structures with other methods.

  17. Cherenkov oscillator operating at the second band gap of leakage waveguide structures

    NASA Astrophysics Data System (ADS)

    Jang, Kyu-Ha; Park, Seong Hee; Lee, Kitae; Jeong, Young Uk

    2016-10-01

    An electromagnetic wave source operating around second band gaps of metallic grating structures is presented. The considered metallic grating structures are not perfect periodic but inhomogeneously structured within a period to have a second band gap where the wavelength is equal to the period of the structures. The radiation mechanism by an electron beam in the structures is different from the well-known Smith-Purcell radiation occurring in perfect periodic grating structures. That is, the radiating wave has a single frequency and the radiation is unidirectional. When the energy of the electron beam is synchronized at the standing wave point in the dispersion curves, strong interaction happens and coherent radiation perpendicular to the grating surface is generated with relatively lower starting oscillation current.

  18. Effect of pressure on the band structure of BC{sub 3}

    SciTech Connect

    Manju, M.S.; Harikrishnan, G.; Ajith, K.M.; Valsakumar, M.C.

    2016-05-23

    Density functional theory (DFT) calculations were carried out to study the effect of pressure on the band structure of two dimensional BC{sub 3} sheet. BC{sub 3} is a semiconductor at ambient conditions having a band gap of ~0.3 eV. Electronic structure calculations are carried out on BC{sub 3} at pressures of 5, 20, 50 and 100 GPa. The system shows a semiconductor – metal transition by the application of pressure without any structural transition.

  19. Terra MODIS band 27 electronic crosstalk: cause, impact, and mitigation

    NASA Astrophysics Data System (ADS)

    Sun, J.; Madhavan, S.; Wenny, B. N.; Xiong, X.

    2011-11-01

    MODIS-Terra is one of the key sensors in the suite of remote sensing instruments in the Earth Observing System (EOS). MODIS on the Terra platform was launched into orbit in December of 1999 and has successfully completed eleven plus years of operation. MODIS has 36 spectral channels with wavelengths varying from 0.4 μm to 14.4 μm. The native spatial resolutions for the reflective channels are 2 bands at 0.25 km, 5 bands at 0.5 km and 29 bands at 1km. However, the MODIS L1B product allows the high spatial resolution bands to be aggregated into 1km resolution. All the thermal channels in MODIS (i.e. 3.75μm - 14.24μm) have a native spatial resolution of 1 km. Over the eleven plus years of mission lifetime, the sensor degradation has been carefully monitored using various On-Board Calibrators (OBC). In particular, the thermal channels are monitored using the on-board Black-Body (BB) which is traceable to NIST standards. MODIS also has a unique feature for calibration reference in terms of lunar irradiance. The lunar observations are scheduled for MODIS periodically (at least 9 observations in a calendar year). Based on the lunar observations, it was found that there was a possible signal leak for band 27 from its neighboring bands located on the Long-Wave Infrared (LWIR) focal plane. Further investigations revealed a possible leak from bands 28, 29 and 30. The magnitude of the leak was trended and correction coefficients were derived. In this paper, we demonstrate the across-band signal leak in MODIS band 27, its potential impact on the retrieved Brightness temperature (B.T.). Also, the paper explores a correction methodology to relieve the artifacts due to the across-band signal leak. Finally, the improvement in the band 27 image quality is quantified.

  20. Layer dependence of the electronic band alignment of few-layer Mo S2 on Si O2 measured using photoemission electron microscopy

    NASA Astrophysics Data System (ADS)

    Berg, Morgann; Keyshar, Kunttal; Bilgin, Ismail; Liu, Fangze; Yamaguchi, Hisato; Vajtai, Robert; Chan, Calvin; Gupta, Gautam; Kar, Swastik; Ajayan, Pulickel; Ohta, Taisuke; Mohite, Aditya D.

    2017-06-01

    Tailoring band alignment layer-by-layer using heterojunctions of two-dimensional (2D) semiconductors is an attractive prospect for producing next-generation electronic and optoelectronic devices that are ultrathin, flexible, and efficient. The 2D layers of transition metal dichalcogenides (TMDs) in laboratory devices have already shown favorable characteristics for electronic and optoelectronic applications. Despite these strides, a systematic understanding of how band alignment evolves from monolayer to multilayer structures is still lacking in experimental studies, which hinders development of novel devices based on TMDs. Here, we report on the local band alignment of monolayer, bilayer, and trilayer Mo S2 on a 285-nm-thick Si O2 substrate using an approach to probe the occupied electronic states based on photoemission electron microscopy and deep-ultraviolet light. Local measurements of the vacuum level and the valence band edge at the Brillouin zone center show that the addition of layers to monolayer Mo S2 increases the relative work function and pushes the valence band edge toward the vacuum level. We also deduced n -type doping of few-layer Mo S2 and type-I band alignment across monolayer-to-bilayer and bilayer-to-trilayer lateral junctions. Conducted in isolation from environmental effects owing to the vacuum condition of the measurement and an insulating Si O2 substrate, this study shows a metrology to uncover electronic properties intrinsic to Mo S2 semiconducting layers and emerging 2D crystals alike.

  1. Outstanding problems in the band structures of 152Sm

    NASA Astrophysics Data System (ADS)

    Gupta, J. B.; Hamilton, J. H.

    2017-09-01

    The recent data on B (E 2 ) values, deduced from the multi-Coulex excitation of the low spin states in the decay of 152Sm, and other experimental findings in the last two decades are compared with the predictions from the microscopic dynamic pairing plus quadrupole model of Kumar and Baranger. The 1292.8 keV 2+ state is assigned to the 03 + band, and the K =2 assignment of the 1769 keV 2+ state is confirmed. The anomaly of the shape coexistence of the assumed spherical β band versus the deformed ground band is resolved. The values from the critical point symmetry X(5) support the collective character of the β band. The problem with the two-term interacting boson model Hamiltonian in predicting β and γ bands in 152Sm leads to interesting consequences. The collective features of the second excited Kπ=03 + band are preferred over the "pairing isomer" view. Also the multiphonon nature of the higher lying Kπ=22 +β γ band and Kπ=4+ band are illustrated vis-à-vis the new data and the nuclear structure theory.

  2. Effective band structure of random III-V alloys

    NASA Astrophysics Data System (ADS)

    Popescu, Voicu; Zunger, Alex

    2010-03-01

    Random substitutional alloys have no long range order (LRO) or translational symmetry so rigorously speaking they have no E(k) band structure or manifestations thereof. Yet, many experiments on alloys are interpreted using the language of band theory, e.g. inferring Van Hove singularities, band dispersion and effective masses. Many standard alloy theories (VCA- or CPA-based) have the LRO imposed on the alloy Hamiltonian, assuming only on-site disorder, so they can not be used to judge the extent of LRO that really exists. We adopt the opposite way, by using large (thousand atom) randomly generated supercells in which chemically identical alloy atoms are allowed to have different local environments (a polymorphous representation). This then drives site-dependent atomic relaxation as well as potential fluctuations. The eigenstates from such supercells are then mapped onto the Brillouin zone (BZ) of the primitive cell, producing effective band dispersion. Results for (In,Ga)X show band-like behaviour only near the centre and faces of the BZ but rapidly lose such characteristics away from γ or for higher bands. We further analyse the effects of stoichiometry variation, internal relaxation, and short-range order on the alloy band structure.

  3. Band structure of ABC-trilayer graphene superlattice

    SciTech Connect

    Uddin, Salah Chan, K. S.

    2014-11-28

    We investigate the effect of one-dimensional periodic potentials on the low energy band structure of ABC trilayer graphene first by assuming that all the three layers have the same potential. Extra Dirac points having the same electron hole crossing energy as that of the original Dirac point are generated by superlattice potentials with equal well and barrier widths. When the potential height is increased, the numbers of extra Dirac points are increased. The dispersions around the Dirac points are not isotropic. It is noted that the dispersion along the k{sub y} direction for k{sub x} = 0 oscillates between a non-linear dispersion and a linear dispersion when the potential height is increased. When the well and barrier widths are not identical, the symmetry of the conduction and valence bands is broken. The extra Dirac points are shifted either upward or downward depending on the barrier and well widths from the zero energy, while the position of the central Dirac point oscillates with the superlattice potential height. By considering different potentials for different layers, extra Dirac points are generated not from the original Dirac points but from the valleys formed in the energy spectrum. Two extra Dirac points appear from each pair of touched valleys, so four Dirac points appeared in the spectrum at particular barrier height. By increasing the barrier height of superlattice potential two Dirac points merge into the original Dirac point. This emerging and merging of extra Dirac points is different from the equal potential case.

  4. Band structures and localization properties of aperiodic layered phononic crystals

    NASA Astrophysics Data System (ADS)

    Yan, Zhi-Zhong; Zhang, Chuanzeng

    2012-03-01

    The band structures and localization properties of in-plane elastic waves with coupling of longitudinal and transverse modes oblique propagating in aperiodic phononic crystals based on Thue-Morse and Rudin-Shapiro sequences are studied. Using transfer matrix method, the concept of the localization factor is introduced and the correctness is testified through the Rytov dispersion relation. For comparison, the perfect periodic structure and the quasi-periodic Fibonacci system are also considered. In addition, the influences of the random disorder, local resonance, translational and/or mirror symmetries on the band structures of the aperiodic phononic crystals are analyzed in this paper.

  5. Fine structure of the red luminescence band in undoped GaN

    SciTech Connect

    Reshchikov, M. A.; Usikov, A.; Helava, H.; Makarov, Yu.

    2014-01-20

    Many point defects in GaN responsible for broad photoluminescence (PL) bands remain unidentified. Their presence in thick GaN layers grown by hydride vapor phase epitaxy (HVPE) detrimentally affects the material quality and may hinder the use of GaN in high-power electronic devices. One of the main PL bands in HVPE-grown GaN is the red luminescence (RL) band with a maximum at 1.8 eV. We observed the fine structure of this band with a zero-phonon line (ZPL) at 2.36 eV, which may help to identify the related defect. The shift of the ZPL with excitation intensity and the temperature-related transformation of the RL band fine structure indicate that the RL band is caused by transitions from a shallow donor (at low temperature) or from the conduction band (above 50 K) to an unknown deep acceptor having an energy level 1.130 eV above the valence band.

  6. Band structure engineering and thermoelectric properties of charge-compensated filled skutterudites

    DOE PAGES

    Shi, Xiaoya; Yang, Jiong; Wu, Lijun; ...

    2015-10-12

    Thermoelectric properties of semiconductors are intimately related to their electronic band structure, which can be engineered via chemical doping. Dopant Ga in the cage-structured skutterudite Co4Sb12 substitutes Sb sites while occupying the void sites. Combining quantitative scanning transmission electron microscopy and first-principles calculations, we show that Ga dual-site occupancy breaks the symmetry of the Sb-Sb network, splits the deep triply-degenerate conduction bands, and drives them downward to the band edge. The charge-compensating nature of the dual occupancy Ga increases overall filling fraction limit. By imparting this unique band structure feature, and judiciously doping the materials by increasing the Yb content,more » we promote the Fermi level to a point where carriers are in energetic proximity to these features. Increased participation of these heavier bands in electronic transport leads to increased thermopower and effective mass. Further, the localized distortion from Ga/Sb substitution enhances the phonon scattering to reduce the thermal conductivity effectively.« less

  7. Band structure engineering and thermoelectric properties of charge-compensated filled skutterudites

    SciTech Connect

    Shi, Xiaoya; Yang, Jiong; Wu, Lijun; Salvador, James R.; Zhang, Cheng; Villaire, William L.; Haddad, Daad; Yang, Jihui; Zhu, Yimei; Li, Qiang

    2015-10-12

    Thermoelectric properties of semiconductors are intimately related to their electronic band structure, which can be engineered via chemical doping. Dopant Ga in the cage-structured skutterudite Co4Sb12 substitutes Sb sites while occupying the void sites. Combining quantitative scanning transmission electron microscopy and first-principles calculations, we show that Ga dual-site occupancy breaks the symmetry of the Sb-Sb network, splits the deep triply-degenerate conduction bands, and drives them downward to the band edge. The charge-compensating nature of the dual occupancy Ga increases overall filling fraction limit. By imparting this unique band structure feature, and judiciously doping the materials by increasing the Yb content, we promote the Fermi level to a point where carriers are in energetic proximity to these features. Increased participation of these heavier bands in electronic transport leads to increased thermopower and effective mass. Further, the localized distortion from Ga/Sb substitution enhances the phonon scattering to reduce the thermal conductivity effectively.

  8. Band Structure Engineering and Thermoelectric Properties of Charge-Compensated Filled Skutterudites

    NASA Astrophysics Data System (ADS)

    Shi, Xiaoya; Yang, Jiong; Wu, Lijun; Salvador, James R.; Zhang, Cheng; Villaire, William L.; Haddad, Daad; Yang, Jihui; Zhu, Yimei; Li, Qiang

    2015-10-01

    Thermoelectric properties of semiconductors are intimately related to their electronic band structure, which can be engineered via chemical doping. Dopant Ga in the cage-structured skutterudite Co4Sb12 substitutes Sb sites while occupying the void sites. Combining quantitative scanning transmission electron microscopy and first-principles calculations, we show that Ga dual-site occupancy breaks the symmetry of the Sb-Sb network, splits the deep triply-degenerate conduction bands, and drives them downward to the band edge. The charge-compensating nature of the dual occupancy Ga increases overall filling fraction limit. By imparting this unique band structure feature, and judiciously doping the materials by increasing the Yb content, we promote the Fermi level to a point where carriers are in energetic proximity to these features. Increased participation of these heavier bands in electronic transport leads to increased thermopower and effective mass. Further, the localized distortion from Ga/Sb substitution enhances the phonon scattering to reduce the thermal conductivity effectively.

  9. Band Structure Engineering and Thermoelectric Properties of Charge-Compensated Filled Skutterudites

    PubMed Central

    Shi, Xiaoya; Yang, Jiong; Wu, Lijun; Salvador, James R.; Zhang, Cheng; Villaire, William L.; Haddad, Daad; Yang, Jihui; Zhu, Yimei; Li, Qiang

    2015-01-01

    Thermoelectric properties of semiconductors are intimately related to their electronic band structure, which can be engineered via chemical doping. Dopant Ga in the cage-structured skutterudite Co4Sb12 substitutes Sb sites while occupying the void sites. Combining quantitative scanning transmission electron microscopy and first-principles calculations, we show that Ga dual-site occupancy breaks the symmetry of the Sb-Sb network, splits the deep triply-degenerate conduction bands, and drives them downward to the band edge. The charge-compensating nature of the dual occupancy Ga increases overall filling fraction limit. By imparting this unique band structure feature, and judiciously doping the materials by increasing the Yb content, we promote the Fermi level to a point where carriers are in energetic proximity to these features. Increased participation of these heavier bands in electronic transport leads to increased thermopower and effective mass. Further, the localized distortion from Ga/Sb substitution enhances the phonon scattering to reduce the thermal conductivity effectively. PMID:26456013

  10. Electronic structure of worm-eaten graphene

    NASA Astrophysics Data System (ADS)

    Negishi, Hayato; Takeda, Kyozaburo

    2017-02-01

    We theoretically study the electronic structure of graphenes having several kinds of imperfections such as atomic vacancies and heteroatom replacements. We consider 12 different configurations of vacancies and 39 different geometries of heteroatom replacements in order to approximately take into account the random conformations of imperfections. To systematically provide a perspective understanding of the defect π and σ states caused by atomistic voids and/or vacancies and heteroatom replacements, we have carried out a tight-binding (TB) calculation. We study the orbital hybridization to clarify the origin and formation of π and σ defect states arising from such imperfections. We also discuss the electronic structure around the Fermi level through the TB band calculation.

  11. Electronic states in hybrid boron nitride and graphene structures

    NASA Astrophysics Data System (ADS)

    Zhao, M.; Huang, Y. H.; Ma, F.; Hu, T. W.; Xu, K. W.; Chu, Paul K.

    2013-08-01

    The energy bands and electronic states of hybrid boron nitride (BN) and graphene structures are studied by first principle calculations. The electronic states change from semi-metallic to insulating depending on the number of B and N atoms as well as domain symmetry. When there are unequal numbers of B and N atoms, mid-gap states usually appear around the Fermi level and the corresponding hybrid structure possesses magnetic and semi-metallic properties. However, when the numbers of B and N atoms are equal, a band gap exists indicative of a semiconducting or insulating nature which depends on the structural symmetry.

  12. Electronic structure and bonding in skutterudite-type phosphides

    NASA Astrophysics Data System (ADS)

    Llunell, Miquel; Alemany, Pere; Alvarez, Santiago; Zhukov, Vladlen P.; Vernes, Andreas

    1996-04-01

    The electronic structures of the skutterudite-type phosphides CoP3 and NiP3 have been investigated by means of first-principles linear muffin-tin orbital-atomic sphere approximation band-structure calculations. The presence of P4 rings in the skutterudite structure is of great importance in determining the nature of the electronic bands around the Fermi level, composed mainly of π-type molecular orbitals of these units. The metallic character found for NiP3 should be ascribed to the phosphorus framework rather than to the metal atoms.

  13. Electronic Structure of LaSb_2

    NASA Astrophysics Data System (ADS)

    Browne, Dana A.; Kurtz, Richard

    2004-03-01

    LaSb2 is a nonmagnetic material that exhibits a large linear magnetoresistance. We have calculated its electronic structure using a full potential LAPW GGA density functional method including the spin-orbit interaction. We find that the Fermi surface consists of both two dimensional sheets and three dimensional bands. Our results are consistent with recent dHvA measurements^1. We discuss the possibility of CDW formation based on nesting of the sheets as well as compare with photoemission^2 and neutron scattering. ^1 R.G. Goodrich et al, submitted to Phys Rev B. ^2 A. I. Acatrinei et al, J. Phys.: Condens. Matter 15, L511 (2003).

  14. Surface structure and electronic properties of materials

    NASA Technical Reports Server (NTRS)

    Siekhaus, W. J.; Somorjai, G. A.

    1975-01-01

    A surface potential model is developed to explain dopant effects on chemical vapor deposition. Auger analysis of the interaction between allotropic forms of carbon and silicon films has shown Si-C formation for all forms by glassy carbon. LEED intensity measurements have been used to determine the mean square displacement of surface atoms of silicon single crystals, and electron loss spectroscopy has shown the effect of structure and impurities on surface states located within the band gap. A thin film of Al has been used to enhance film crystallinity at low temperature.

  15. Electronic structure of nonstoichiometric cubic hydrides

    SciTech Connect

    Switendick, A.C.

    1980-01-01

    Using the supercell approach we have calculated the electronic structure of Y/sub 4/H/sub 8/, Y/sub 4/H/sub 9/, Y/sub 4/H/sub 11/, and Y/sub 4/H/sub 12/ as prototypic of nonstoichiometric cubic di- and trihydrides. The nature of the interaction between the yttrium and the octahedral and tetrahedral hydrogens is shown by the relative amount of charge contained in the crystal spheres. Each added hydrogen lowers one band which was already partially filled. The charge on both the octahedral and tetrahedral sites is very similar and significantly more than is contained in a comparable atomic sphere.

  16. Mechanisms of fine extinction band development in vein quartz: new insights from correlative light and electron microscopy

    NASA Astrophysics Data System (ADS)

    Derez, Tine; Van Der Donck, Tom; Plümper, Oliver; Muchez, Philippe; Pennock, Gill; Drury, Martyn R.; Sintubin, Manuel

    2017-07-01

    Fine extinction bands (FEBs) (also known as deformation lamellae) visible with polarized light microscopy in quartz consist of a range of nanostructures, inferring different formation processes. Previous transmission electron microscopy studies have shown that most FEB nanostructures in naturally deformed quartz are elongated subgrains formed by recovery of dislocation slip bands. Here we show that three types of FEB nanostructure occur in naturally deformed vein quartz from the low-grade metamorphic High-Ardenne slate belt (Belgium). Prismatic oriented FEBs are defined by bands of dislocation walls. Dauphiné twin boundaries present along the FEB boundaries probably formed after FEB formation. In an example of two sub-rhombohedral oriented FEBs, developed as two sets in one grain, the finer FEB set consists of elongated subgrains, similar to FEBs described in previous transmission electron microscopy studies. The second wider FEB set consists of bands with different dislocation density and fluid-inclusion content. The wider FEB set is interpreted as bands with different plastic strain associated with the primary growth banding of the vein quartz grain. The nanometre-scale fluid inclusions are interpreted to have formed from structurally bounded hydroxyl groups that moreover facilitated formation of the elongate subgrains. Larger fluid inclusions aligned along FEBs are explained by fluid-inclusion redistribution along dislocation cores. The prismatic FEB nanostructure and the relation between FEBs and growth bands have not been recognized before, although related structures have been reported in experimentally deformed quartz.

  17. Experimental Electronic Structure of Be_2C

    NASA Astrophysics Data System (ADS)

    Tsuei, K.-D.; Tzeng, C.-T.; Lo, W.-S.; Yuh, J.-Y.; Chu, R.-Y.

    1998-03-01

    The insulating Be_2C thin films have been successfully prepared on a Be surface. LEED pattern shows that the films have (100) orientation along the surface normal. We have used angle-resolved photoemission to map out the occupied bulk band dispersion along Γ-X direction. The band gap edges at X point are 6.5 and 11.7 eV below the valence band maximum which is located at Γ point. These values are in good agreement with theoretical calculations. [1,2] In addition two surface states are observed. One is 0.5 eV above VBM. The other is located at 9.5 eV below VBM in the middle of the band gap at X point. The unoccupied bulk electronic structure is measured using C 1s near edge x-ray absorption spectroscopy. The spectrum is similar in shape to an energy loss spectrum [3] and p-PDOS from the calculation, [2] while the relative peak positions are different. [1] J.L. Corkill and M.L. Cohen, Phy. Rev. B 48, 17138 (1993). [2] C.H. Lee, W.R. Lambrecht, and B. Segall, Phys. Rev. B 51, 10392 (1995). [3] M.M. Disko, J.C.H. Spence, O.F. Sankey, and D. Saldin, Phys. Rev. B 33, 5642 (1986).

  18. Electronic structure of sulfanilamides

    SciTech Connect

    Grechishkin, V.S.; Grechishkina, R.V.; Starovoitova, O.V.

    1986-05-01

    At present, about 30,000 derivatives of sulfanilamide are known. The establishment of a relationship between the structure of these compounds and their bacteriostatic activity is an urgent problem. In the present work, this problem is solved by means of NQR and NMR spectroscopy. Since the content of the /sup 14/N nuclei in these molecules is not high, to run the NQR, they used the double resonance method. Some samples of the sulfanilamides were studied by direct pulsed NQR method. The high resolution NMR spectra were run in heavy water solution on a RS-60MA spectrometer. All the measurements were carried out at 120/sup 0/K in the solid phase. The results of the calculation of eQq/sub zz/ for the NH/sub 2/ groups in the sulfanilamide residue are listed. To interpret the results by the MO LCAO method in the Hueckel approximation on the EC-1022 computer by a special FORTRAN program, they calculated the charged rho on an atom in the amino group with parameters of hetero atoms and coupling constants.

  19. Electronic properties of Janus silicene: new direct band gap semiconductors

    NASA Astrophysics Data System (ADS)

    Sun, Minglei; Ren, Qingqiang; Wang, Sake; Yu, Jin; Tang, Wencheng

    2016-11-01

    Using first-principles calculations, we propose a new class of materials, Janus silicene, which is silicene asymmetrically functionalized with hydrogen and halogen atoms. Formation energies and phonon dispersion indicated that all the Janus silicene systems exhibit good kinetic stability. As compared to silicane, all Janus silicene systems are direct band gap semiconductors. The band gap of Janus silicene can take any value between 1.91 and 2.66 eV by carefully tuning the chemical composition of the adatoms. In addition, biaxial elastic strain can further reduce the band gap to 1.11 eV (under a biaxial tensile strain up to 10%). According to moderate direct band gap, these materials demonstrate potential applications in optoelectronics, exhibiting a very wide spectral range, and they are expected to be highly stable under ambient conditions.

  20. Universal phase diagrams with superconducting domes for electronic flat bands

    NASA Astrophysics Data System (ADS)

    Löthman, Tomas; Black-Schaffer, Annica M.

    2017-08-01

    Condensed matter systems with flat bands close to the Fermi level generally exhibit, due to their very large density of states, extraordinarily high critical ordering temperatures of symmetry-breaking orders, such as superconductivity and magnetism. Here we show that the critical temperatures follow one of two universal curves with doping away from a flat band depending on the ordering channel, which completely dictates both the general order competition and the phase diagram. Notably, we find that orders in the particle-particle channel (superconducting orders) survive decisively farther than orders in the particle-hole channel (magnetic or charge orders) because the channels have fundamentally different polarizabilities. Thus, even if a magnetic or charge order initially dominates, superconducting domes are still likely to exist on the flanks of flat bands. We apply these general results to both the topological surface flat bands of rhombohedral ABC-stacked graphite and to the Van Hove singularity of graphene.

  1. Metal-like Band Structures of Ultrathin Si {111} and {112} Surface Layers Revealed through Density Functional Theory Calculations.

    PubMed

    Tan, Chih-Shan; Huang, Michael H

    2017-09-04

    Density functional theory calculations have been performed on Si (100), (110), (111), and (112) planes with tunable number of planes for evaluation of their band structures and density of states profiles. The purpose is to see whether silicon can exhibit facet-dependent properties derived from the presence of a thin surface layer having different band structures. No changes have been observed for single to multiple layers of Si (100) and (110) planes with a consistent band gap between the valence band and the conduction band. However, for 1, 2, 4, and 5 Si (111) and (112) planes, metal-like band structures were obtained with continuous density of states going from the valence band to the conduction band. For 3, 6, and more Si (111) planes, as well as 3 and 6 Si (112) planes, the same band structure as that seen for Si (100) and (110) planes has been obtained. Thus, beyond a layer thickness of five Si (111) planes at ≈1.6 nm, normal semiconductor behavior can be expected. The emergence of metal-like band structures for the Si (111) and (112) planes are related to variation in Si-Si bond length and bond distortion plus 3s and 3p orbital electron contributions in the band structure. This work predicts possession of facet-dependent electrical properties of silicon with consequences in FinFET transistor design. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Dual-Band Perfect Absorption by Breaking the Symmetry of Metamaterial Structure

    NASA Astrophysics Data System (ADS)

    Hai, Le Dinh; Qui, Vu Dinh; Dinh, Tiep Hong; Hai, Pham; Giang, Trinh Thị; Cuong, Tran Manh; Tung, Bui Son; Lam, Vu Dinh

    2017-02-01

    Since the first proposal of Landy et al. (Phys Rev Lett 100:207402, 2008), the metamaterial perfect absorber (MPA) has rapidly become one of the most crucial research trends. Recently, dual-band, multi-band and broadband MPA have been highly desirable in electronic applications. In this paper, we demonstrate and evaluate a MPA structure which can generate dual-band absorption operating at the microwave frequency by breaking the symmetry of structure. There is an agreement between simulation and experimental results. The results can be explained by using the equivalent LC circuit and the electric field distribution of this structure. In addition, various structures with different symmetry configurations were studied to gain greater insight into the absorption.

  3. Calculation of RIXS spectra of cuprates using band structure parameters

    NASA Astrophysics Data System (ADS)

    Shi, Yifei; Klich, Israel; Benjamin, David; Demler, Eugene

    2015-03-01

    We explore the quasi particle theory to study the Resonant Inelastic X-ray Scattering(RIXS) by using the band structure parameters. We use both the determinant method(D. Benjamin, I. Klich and E. Demler, Phys. Rev. Lett. 112, 247002(2014)) and the expansion in the core-hole potential. The methods are applied to the (CaxLa1?x)(Ba1 . 75 - xLa0 . 25 + x)Cu3Oy, (x= 0 . 1 and 0 . 4). We find that by using the band structure alone we can obtain quantitative agreement with the experimental data, especially for the position of the peak.

  4. Electronic bands and optical conductivity of the Dzyaloshinsky-Moriya multiferroic Ba2CuGe2O7

    NASA Astrophysics Data System (ADS)

    Corasaniti, M.; Barone, P.; Nucara, A.; Ortolani, M.; Baldassarre, L.; Fittipaldi, R.; Granata, V.; Rocco, L.; Vecchione, A.; Mohamed, W. S.; Lorenzana, J.; Calvani, P.

    2017-08-01

    We have measured the reflectivity in the a b plane and along the c axis of a single crystal of the Dzyaloshinsky-Moriya multiferroic Ba2CuGe2O7 , from 20 to 300 K and from 700 to 24 000 cm-1. The resulting optical conductivity σ (ω ) has been compared with the results of calculations of its electronic band structure based on density functional theory (DFT). A broad midinfrared band, which in the a b plane strongly hardens for decreasing temperature, is consistent with d-d transitions of the Cu atom. A further electronic absorption, whose edge falls in the near infrared and has a strong O-p character, unusually softens with decreasing temperature by more than 0.15 eV, in both polarizations. Calculations show that the behavior with temperature of those electronic bands can be related to distortions of the CuO4 tetrahedra.

  5. Magnetic excitations versus electronic bands on twinned YBa_2Cu_3O_7-δ superconductors

    NASA Astrophysics Data System (ADS)

    Li, Jun; Tam, Ka Ming; Lin, Hai-Qing

    2002-03-01

    Connection between the magnetic excitations detected by the inelastic neutron-scattering (INS) [1,2,3] and the angle-resolved photoemission (ARPES) measured electronic structures [4] on the high temperature YBa_2Cu_3O_7-δ superconductors is still an open question. Direct use of the ARPES derived bonding and antibonding quasiparticle bands will produce an unphysical incommensurability (ICM) of δ =0.5π in the INS measured ICM peak positions Q^*=(π ,π ± δ ). We point out that the slave-boson approach [5] provides a systematic way of relating these two kinds of experiments. At nearly optimal doping of x=15%, the ARPES derived bands on untwinned YBa_2Cu_3O_7-δ are taken as a starting point. The slave-boson renormalized fermion bands are less curved around the Brillouin zone diagonals so that they are able to induce an incommensurability of δ =0.2π in the odd spin excitation channel with neutron energy ω =37.5meV as well as resonance peak with neutron frequency ω =47.3 meV . These magnetic spectra are in good agreement with the INS experiments on nearly optimally doped twinned YBa_2twinning is averaged out due to the equal populations of the two twin domains. New factor should be taken into account to explain the INS spectra of untwinned samples [3]. In the underdoped region (x=10%), no ARPES derived band is presently available. A rigid band approximations by using the same ARPES bands cannot give consistent INS spectra [1] for less doped YBaslave-boson approach is used. This is due to the sensitive doping dependence of electronic structures of high-Tc cuprates. References [1] H. A. Mook et al. , Nature 395, 580 (1998). [2] P. Bourges et al. , Science 288, 1234 (2000). [3] H. A. Mook et al. , Nature 404, 729 (2000). [4] M.C.Schabel et al., Phys. Rev. B 57, 6090 (1998). [5] J. Brinckmann and P. A. Lee, Phys. Rev. Lett. 82, 2915(1999).

  6. Tunable band structure and effective mass of disordered chalcopyrite

    NASA Astrophysics Data System (ADS)

    Wang, Ze-Lian; Xie, Wen-Hui; Zhao, Yong-Hong

    2017-02-01

    The band structure and effective mass of disordered chalcopyrite photovoltaic materials Cu1- x Ag x Ga X 2 ( X = S, Se) are investigated by density functional theory. Special quasirandom structures are used to mimic local atomic disorders at Cu/Ag sites. A local density plus correction method is adopted to obtain correct semiconductor band gaps for all compounds. The bandgap anomaly can be seen for both sulfides and selenides, where the gap values of Ag compounds are larger than those of Cu compounds. Band gaps can be modulated from 1.63 to 1.78 eV for Cu1- x Ag x Ga Se 2, and from 2.33 to 2.64 eV for Cu1- x Ag x Ga S 2. The band gap minima and maxima occur at around x = 0:5 and x = 1, respectively, for both sulfides and selenides. In order to show the transport properties of Cu1- x Ag x Ga X 2, the effective mass is shown as a function of disordered Ag concentration. Finally, detailed band structures are shown to clarify the phonon momentum needed by the fundamental indirect-gap transitions. These results should be helpful in designing high-efficiency photovoltaic devices, with both better absorption and high mobility, by Ag-doping in CuGa X 2.

  7. Reconfigurable wave band structure of an artificial square ice

    SciTech Connect

    lacocca, Ezio; Gliga, Sebastian; Stamps, Robert L.; Heinonen, Olle

    2016-04-18

    Artificial square ices are structures composed of magnetic nanoelements arranged on the sites of a twodimensional square lattice, such that there are four interacting magnetic elements at each vertex, leading to geometrical frustration. Using a semianalytical approach, we show that square ices exhibit a rich spin-wave band structure that is tunable both by external magnetic fields and the magnetization configuration of individual elements. Internal degrees of freedom can give rise to equilibrium states with bent magnetization at the element edges leading to characteristic excitations; in the presence of magnetostatic interactions these form separate bands analogous to impurity bands in semiconductors. Full-scale micromagnetic simulations corroborate our semianalytical approach. Our results show that artificial square ices can be viewed as reconfigurable and tunable magnonic crystals that can be used as metamaterials for spin-wave-based applications at the nanoscale.

  8. Band structure mapping of bilayer graphene via quasiparticle scattering

    NASA Astrophysics Data System (ADS)

    Yankowitz, Matthew; Wang, Joel I.-Jan; Li, Suchun; Birdwell, A. Glen; Chen, Yu-An; Watanabe, Kenji; Taniguchi, Takashi; Quek, Su Ying; Jarillo-Herrero, Pablo; LeRoy, Brian J.

    2014-09-01

    A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle interference properties are controlled by the bilayer graphene band structure, allowing a direct local probe of the evolution of the band structure of bilayer graphene as a function of electric field. We extract the Slonczewski-Weiss-McClure model tight binding parameters as γ0 = 3.1 eV, γ1 = 0.39 eV, and γ4 = 0.22 eV.

  9. Reconfigurable wave band structure of an artificial square ice

    DOE PAGES

    lacocca, Ezio; Gliga, Sebastian; Stamps, Robert L.; ...

    2016-04-18

    Artificial square ices are structures composed of magnetic nanoelements arranged on the sites of a twodimensional square lattice, such that there are four interacting magnetic elements at each vertex, leading to geometrical frustration. Using a semianalytical approach, we show that square ices exhibit a rich spin-wave band structure that is tunable both by external magnetic fields and the magnetization configuration of individual elements. Internal degrees of freedom can give rise to equilibrium states with bent magnetization at the element edges leading to characteristic excitations; in the presence of magnetostatic interactions these form separate bands analogous to impurity bands in semiconductors.more » Full-scale micromagnetic simulations corroborate our semianalytical approach. Our results show that artificial square ices can be viewed as reconfigurable and tunable magnonic crystals that can be used as metamaterials for spin-wave-based applications at the nanoscale.« less

  10. Reconfigurable wave band structure of an artificial square ice

    SciTech Connect

    lacocca, Ezio; Gliga, Sebastian; Stamps, Robert L.; Heinonen, Olle

    2016-04-18

    Artificial square ices are structures composed of magnetic nanoelements arranged on the sites of a twodimensional square lattice, such that there are four interacting magnetic elements at each vertex, leading to geometrical frustration. Using a semianalytical approach, we show that square ices exhibit a rich spin-wave band structure that is tunable both by external magnetic fields and the magnetization configuration of individual elements. Internal degrees of freedom can give rise to equilibrium states with bent magnetization at the element edges leading to characteristic excitations; in the presence of magnetostatic interactions these form separate bands analogous to impurity bands in semiconductors. Full-scale micromagnetic simulations corroborate our semianalytical approach. Our results show that artificial square ices can be viewed as reconfigurable and tunable magnonic crystals that can be used as metamaterials for spin-wave-based applications at the nanoscale.

  11. Band gap and chemically ordered domain structure of a graphene analogue BCN

    NASA Astrophysics Data System (ADS)

    Venu, K.; Kanuri, S.; Raidongia, K.; Hembram, K. P. S. S.; Waghmare, U. V.; Datta, R.

    2010-12-01

    Chemically synthesized few layer graphene analogues of B xC yN z are characterized by aberration corrected transmission electron microscopy and high resolution electron energy loss spectroscopy (HREELS) to determine the local phase, electronic structure and band gap. HREELS band gap studies of a B xC yN z composition reveal absorption edges at 2.08, 3.43 and 6.01 eV, indicating that the B xC yN z structure may consist of domains of different compositions. The K-absorption edge energy position of the individual elements in B xC yN z is determined and compared with h-BN and graphite. An understanding of these experimental findings is developed with complementary first-principles based calculations of the various ordered configurations of B xC yN z.

  12. Electron correlations and the minority-spin band gap in half-metallic Heusler alloys.

    PubMed

    Chioncel, L; Arrigoni, E; Katsnelson, M I; Lichtenstein, A I

    2006-04-07

    Electron-electron correlations affect the band gap of half-metallic ferromagnets by introducing nonquasiparticle states just above the Fermi level. In contrast with the spin-orbit coupling, a large asymmetric nonquasiparticle spectral weight is present in the minority-spin channel, leading to a peculiar finite-temperature spin depolarization effects. Using recently developed first-principle dynamical mean-field theory, we investigate these effects for the half-metallic ferrimagnetic Heusler compound FeMnSb. We discuss depolarization effects in terms of strength of local Coulomb interaction U and temperature in FeMnSb. We propose Ni(1-x)Fe(x)MnSb alloys as a perspective materials to be used in spin-valve structures and for experimental search of nonquasiparticle states in half-metallic materials.

  13. Complex band structures of transition metal dichalcogenide monolayers with spin-orbit coupling effects

    NASA Astrophysics Data System (ADS)

    Szczęśniak, Dominik; Ennaoui, Ahmed; Ahzi, Saïd

    2016-09-01

    Recently, the transition metal dichalcogenides have attracted renewed attention due to the potential use of their low-dimensional forms in both nano- and opto-electronics. In such applications, the electronic and transport properties of monolayer transition metal dichalcogenides play a pivotal role. The present paper provides a new insight into these essential properties by studying the complex band structures of popular transition metal dichalcogenide monolayers (MX 2, where M  =  Mo, W; X  =  S, Se, Te) while including spin-orbit coupling effects. The conducted symmetry-based tight-binding calculations show that the analytical continuation from the real band structures to the complex momentum space leads to nonlinear generalized eigenvalue problems. Herein an efficient method for solving such a class of nonlinear problems is presented and yields a complete set of physically relevant eigenvalues. Solutions obtained by this method are characterized and classified into propagating and evanescent states, where the latter states manifest not only monotonic but also oscillatory decay character. It is observed that some of the oscillatory evanescent states create characteristic complex loops at the direct band gap of MX 2 monolayers, where electrons can directly tunnel between the band gap edges. To describe these tunneling currents, decay behavior of electronic states in the forbidden energy region is elucidated and their importance within the ballistic transport regime is briefly discussed.

  14. Complex band structures of transition metal dichalcogenide monolayers with spin-orbit coupling effects.

    PubMed

    Szczęśniak, Dominik; Ennaoui, Ahmed; Ahzi, Saïd

    2016-09-07

    Recently, the transition metal dichalcogenides have attracted renewed attention due to the potential use of their low-dimensional forms in both nano- and opto-electronics. In such applications, the electronic and transport properties of monolayer transition metal dichalcogenides play a pivotal role. The present paper provides a new insight into these essential properties by studying the complex band structures of popular transition metal dichalcogenide monolayers (MX 2, where M  =  Mo, W; X  =  S, Se, Te) while including spin-orbit coupling effects. The conducted symmetry-based tight-binding calculations show that the analytical continuation from the real band structures to the complex momentum space leads to nonlinear generalized eigenvalue problems. Herein an efficient method for solving such a class of nonlinear problems is presented and yields a complete set of physically relevant eigenvalues. Solutions obtained by this method are characterized and classified into propagating and evanescent states, where the latter states manifest not only monotonic but also oscillatory decay character. It is observed that some of the oscillatory evanescent states create characteristic complex loops at the direct band gap of MX 2 monolayers, where electrons can directly tunnel between the band gap edges. To describe these tunneling currents, decay behavior of electronic states in the forbidden energy region is elucidated and their importance within the ballistic transport regime is briefly discussed.

  15. Electronic Structure of Silicon Nanowires Matrix from Ab Initio Calculations.

    PubMed

    Monastyrskii, Liubomyr S; Boyko, Yaroslav V; Sokolovskii, Bogdan S; Potashnyk, Vasylyna Ya

    2016-12-01

    An investigation of the model of porous silicon in the form of periodic set of silicon nanowires has been carried out. The electronic energy structure was studied using a first-principle band method-the method of pseudopotentials (ultrasoft potentials in the basis of plane waves) and linearized mode of the method of combined pseudopotentials. Due to the use of hybrid exchange-correlation potentials (B3LYP), the quantitative agreement of the calculated value of band gap in the bulk material with experimental data is achieved. The obtained results show that passivation of dangling bonds with hydrogen atoms leads to substantial transformation of electronic energy structure. At complete passivation of the dangling silicon bonds by hydrogen atoms, the band gap value takes the magnitude which substantially exceeds that for bulk silicon. The incomplete passivation gives rise to opposite effect when the band gap value decreases down the semimetallic range.

  16. Electronic Structure of Silicon Nanowires Matrix from Ab Initio Calculations

    NASA Astrophysics Data System (ADS)

    Monastyrskii, Liubomyr S.; Boyko, Yaroslav V.; Sokolovskii, Bogdan S.; Potashnyk, Vasylyna Ya.

    2016-01-01

    An investigation of the model of porous silicon in the form of periodic set of silicon nanowires has been carried out. The electronic energy structure was studied using a first-principle band method—the method of pseudopotentials (ultrasoft potentials in the basis of plane waves) and linearized mode of the method of combined pseudopotentials. Due to the use of hybrid exchange-correlation potentials (B3LYP), the quantitative agreement of the calculated value of band gap in the bulk material with experimental data is achieved. The obtained results show that passivation of dangling bonds with hydrogen atoms leads to substantial transformation of electronic energy structure. At complete passivation of the dangling silicon bonds by hydrogen atoms, the band gap value takes the magnitude which substantially exceeds that for bulk silicon. The incomplete passivation gives rise to opposite effect when the band gap value decreases down the semimetallic range.

  17. Extracting band structure characteristics of GaSb/InAs core-shell nanowires from thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Viñas, Florinda; Xu, H. Q.; Leijnse, Martin

    2017-03-01

    Nanowires with a GaSb core and an InAs shell (and the inverted structure) are interesting for studies of electron-hole hybridization and interaction effects due to the bulk broken band-gap alignment at the material interface. We have used eight-band k .p theory together with the envelope function approximation to calculate the band structure of such nanowires. For a fixed core radius, as a function of shell thickness the band structure changes from metallic (for a thick shell) to semiconducting (for a thin shell) with a gap induced by quantum confinement. For intermediate shell thickness, a different gapped band structure can appear, where the gap is induced by hybridization between the valence band in GaSb and the conduction band in InAs. To establish a relationship between the nanowire band structures and signatures in thermoelectrical measurements, we use the calculated energy dispersions as input to the Boltzmann equation and to ballistic transport equations to study the diffusive limit and the ballistic limit, respectively. Our theoretical results provide a guide for experiments, showing how thermoelectric measurements in a gated setup can be used to distinguish between different types of band gaps, or tune the system into a regime with few electrons and few holes, which can be of interest for studies of exciton physics.

  18. Characterization of borate glasses by W-band pulse electron-nuclear double resonance spectroscopy

    SciTech Connect

    Kordas, George; Goldfarb, Daniella

    2008-10-21

    (100-x) mol % B{sub 2}O{sub 3} x mol %Me{sub 2}O (Me=Li,Na,K) glasses, exposed to {gamma}-{sup 60}Co irradiation to produce paramagnetic states, were characterized by W-band (95 GHz) pulse electron-nuclear double resonance (ENDOR) spectroscopy in order to characterize local structures occurring in the range of compositions between x=16 and x=25 at which the 'boron oxide' anomaly occurs. The high resolution of nuclear frequencies allowed resolving the {sup 7}Li and {sup 11}B ENDOR lines. In the samples with x=16 and x=20 glasses, {sup 11}B hyperfine couplings of 16, 24, and 36 MHz were observed and attributed to the tetraborate, triborate, and boron oxygen hole center (BOHC) structures, respectively. The x=25 samples showed hyperfine couplings of 15 MHz for the tetraborate and 36 MHz for BOHC. Density functional theory (DFT) calculations predicted for these structures negative hyperfine couplings, which were confirmed by W-band ENDOR. This suggests that a spin polarization mechanism accounts for the negative hyperfine structure splitting.

  19. Disorder enabled band structure engineering of a topological insulator surface

    PubMed Central

    Xu, Yishuai; Chiu, Janet; Miao, Lin; He, Haowei; Alpichshev, Zhanybek; Kapitulnik, A.; Biswas, Rudro R.; Wray, L. Andrew

    2017-01-01

    Three-dimensional topological insulators are bulk insulators with Z2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. At native densities in the model Bi2X3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport. PMID:28155858

  20. Disorder enabled band structure engineering of a topological insulator surface

    NASA Astrophysics Data System (ADS)

    Xu, Yishuai; Chiu, Janet; Miao, Lin; He, Haowei; Alpichshev, Zhanybek; Kapitulnik, A.; Biswas, Rudro R.; Wray, L. Andrew

    2017-02-01

    Three-dimensional topological insulators are bulk insulators with Z2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. At native densities in the model Bi2X3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.

  1. Disorder enabled band structure engineering of a topological insulator surface

    DOE PAGES

    Xu, Yishuai; Chiu, Janet; Miao, Lin; ...

    2017-02-03

    Three-dimensional topological insulators are bulk insulators with Z2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localizedmore » regime usually associated with impurity bands. Lastly, at native densities in the model Bi2X3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.« less

  2. Electronic structure of Sn/Cu(100)-[Formula: see text].

    PubMed

    Martínez-Blanco, J; Joco, V; Fujii, J; Segovia, P; Michel, E G

    2009-02-04

    We present measurements of the Fermi surface and underlying band structure of Sn/Cu(100)-[Formula: see text]. This phase is observed for a coverage of 0.60-0.65 monolayers. Its electronic structure is characterized by a free-electron-like surface band folded with the reconstruction periodicity. At variance with other surface phases of Sn on Cu(100), no temperature-induced phase transition is observed for this phase from 100 K up to the desorption of Sn.

  3. Band-structure loops and multistability in cavity QED

    NASA Astrophysics Data System (ADS)

    Prasanna Venkatesh, B.; Larson, J.; O'Dell, D. H. J.

    2011-06-01

    We calculate the band structure of ultracold atoms located inside a laser-driven optical cavity. For parameters where the atom-cavity system exhibits bistability, the atomic band structure develops loop structures akin to the ones predicted for Bose-Einstein condensates in ordinary (noncavity) optical lattices. However, in our case the nonlinearity derives from the cavity back-action rather than from direct interatomic interactions. We find both bi- and tristable regimes associated with the lowest band, and show that the multistability we observe can be analyzed in terms of swallowtail catastrophes. Dynamic and energetic stability of the mean-field solutions is also discussed, and we show that the bistable solutions have, as expected, one unstable and two stable branches. The presence of loops in the atomic band structure has important implications for proposals concerning Bloch oscillations of atoms inside optical cavities [Peden , Phys. Rev. APLRAAN1050-294710.1103/PhysRevA.80.043803 80, 043803 (2009); Prasanna Venkatesh , Phys. Rev. APLRAAN1050-294710.1103/PhysRevA.80.063834 80, 063834 (2009)].

  4. Band structure of W and Mo by empirical pseudopotential method

    NASA Technical Reports Server (NTRS)

    Sridhar, C. G.; Whiting, E. E.

    1977-01-01

    The empirical pseudopotential method (EPM) is used to calculate the band structure of tungsten and molybdenum. Agreement between the calculated reflectivity, density of states, density of states at the Fermi surface and location of the Fermi surface from this study and experimental measurements and previous calculations is good. Also the charge distribution shows the proper topological distribution of charge for a bcc crystal.

  5. Band structure, cohesive properties, and Compton profile of γ- and α-cerium

    NASA Astrophysics Data System (ADS)

    Podloucky, R.; Glötzel, D.

    1983-03-01

    Recent Compton scattering experiments on the high-volume (γ) and low-volume (α) phases of fcc cerium and their interpretation in terms of the renormalized-free-atom model cast severe doubts on the promotional model of Pauling and Zachariasen for the γ-α transition. Stimulated by these results, we have extended a previous self-consistent local-density band-structure investigation to study the Compton profiles of γ- and α-cerium. For the band structure, Bloch functions, and their Fourier transforms we use the linear muffin-tin orbital method in the atomic-sphere approximation. We analyze the calculated Compton profiles in terms of band structure and local angular momentum character of the wave functions. The change in band structure and wave functions under compression (with approximately one electron per atom in the 4f band of both phases) accounts well for the observed change in the Compton profile. This provides further evidence against the promotional model in agreement with the analysis of Kornstädt et al. In addition, we study the cohesive energy of fcc cerium as a function of volume in the local-density approximation. For α-cerium in the 4f1(5d 6s)3 configuration we find a cohesive energy of 5.4 eV/atom in good agreement with experiment, whereas the "promotional" 4f0(5d 6s)4 state yields a binding energy of 0.6 eV/atom only. Therefore the fourth valence electron has to be a 4f electron, and α-cerium has to be regarded as an f-band metal.

  6. Near E{sub F} Electronic Structure of Graphite from Photoemission and Inverse Photoemission Studies

    SciTech Connect

    Sekhar, B. R.; Kundu, R.; Mishra, P.; Maniraj, M.; Barman, S. R.

    2011-10-20

    A comparative study of the electronic band structure of single crystal and highly oriented pyrolitic graphite is presented. We have used angle resolved photoelectron spectroscopy and angle resolved inverse photoelectron spectroscopy to map the occupied and unoccupied electronic states respectively.

  7. Electronic structure of wet DNA.

    PubMed

    Gervasio, Francesco Luigi; Carloni, Paolo; Parrinello, Michele

    2002-09-02

    The electronic properties of a Z-DNA crystal synthesized in the laboratory are investigated by means of density-functional theory Car-Parrinello calculations. The electronic structure has a gap of only 1.28 eV. This separates a manifold of 12 occupied states which came from the pi guanine orbitals from the lowest empty states in which the electron is transferred to the Na+ from PO-4 groups and water molecules. We have evaluated the anisotropic optical conductivity. At low frequency the conductivity is dominated by the pi-->Na+ transitions. Our calculation demonstrates that the cost of introducing electron holes in wet DNA strands could be lower than previously anticipated.

  8. X-Band Photonic Band-Gap Accelerator Structure Breakdown Experiment

    SciTech Connect

    Marsh, Roark A.; Shapiro, Michael A.; Temkin, Richard J.; Dolgashev, Valery A.; Laurent, Lisa L.; Lewandowski, James R.; Yeremian, A.Dian; Tantawi, Sami G.; /SLAC

    2012-06-11

    In order to understand the performance of photonic band-gap (PBG) structures under realistic high gradient, high power, high repetition rate operation, a PBG accelerator structure was designed and tested at X band (11.424 GHz). The structure consisted of a single test cell with matching cells before and after the structure. The design followed principles previously established in testing a series of conventional pillbox structures. The PBG structure was tested at an accelerating gradient of 65 MV/m yielding a breakdown rate of two breakdowns per hour at 60 Hz. An accelerating gradient above 110 MV/m was demonstrated at a higher breakdown rate. Significant pulsed heating occurred on the surface of the inner rods of the PBG structure, with a temperature rise of 85 K estimated when operating in 100 ns pulses at a gradient of 100 MV/m and a surface magnetic field of 890 kA/m. A temperature rise of up to 250 K was estimated for some shots. The iris surfaces, the location of peak electric field, surprisingly had no damage, but the inner rods, the location of the peak magnetic fields and a large temperature rise, had significant damage. Breakdown in accelerator structures is generally understood in terms of electric field effects. These PBG structure results highlight the unexpected role of magnetic fields in breakdown. The hypothesis is presented that the moderate level electric field on the inner rods, about 14 MV/m, is enhanced at small tips and projections caused by pulsed heating, leading to breakdown. Future PBG structures should be built to minimize pulsed surface heating and temperature rise.

  9. Electron Scattering and Nuclear Structure

    ERIC Educational Resources Information Center

    Trower, W. P.; Ficenec, J. R.

    1971-01-01

    Presents information about the nucleus gained by studies of electron scattering. Discusses what can be implied about the shape of the charge distribution, the nucleus positions, the vibrational modes of the nucleus, the momentum of the nucleus, and the granularity and core structures of the nucleus. (DS)

  10. Electronic Structure Principles and Aromaticity

    ERIC Educational Resources Information Center

    Chattaraj, P. K.; Sarkar, U.; Roy, D. R.

    2007-01-01

    The relationship between aromaticity and stability in molecules on the basis of quantities such as hardness and electrophilicity is explored. The findings reveal that aromatic molecules are less energetic, harder, less polarizable, and less electrophilic as compared to antiaromatic molecules, as expected from the electronic structure principles.

  11. Electronic Structure Principles and Aromaticity

    ERIC Educational Resources Information Center

    Chattaraj, P. K.; Sarkar, U.; Roy, D. R.

    2007-01-01

    The relationship between aromaticity and stability in molecules on the basis of quantities such as hardness and electrophilicity is explored. The findings reveal that aromatic molecules are less energetic, harder, less polarizable, and less electrophilic as compared to antiaromatic molecules, as expected from the electronic structure principles.

  12. Electron Scattering and Nuclear Structure

    ERIC Educational Resources Information Center

    Trower, W. P.; Ficenec, J. R.

    1971-01-01

    Presents information about the nucleus gained by studies of electron scattering. Discusses what can be implied about the shape of the charge distribution, the nucleus positions, the vibrational modes of the nucleus, the momentum of the nucleus, and the granularity and core structures of the nucleus. (DS)

  13. The effects of different possible modes of uniaxial strain on the tunability of electronic and band structures in {MoS}_2 monolayer nanosheet via first-principles density functional theory

    NASA Astrophysics Data System (ADS)

    Dimple; Jena, Nityasagar; Behere, Shounak Dhananjay; De Sarkar, Abir

    2017-07-01

    Ab-initio density functional theory-based calculations have been performed on monolayer (ML) {MoS}_2 nanosheet to study the variation of its electronic properties with the application of uniaxial tensile and compressive strain along its two non-equivalent lattice directions, namely, the zig-zag and the arm-chair directions. Among all the strain types considered in this study, uniaxial tensile strain applied along the zig-zag direction is found to be the most efficacious, inducing a greater tunability in the band gap over a large energy range (from 1.689 to 0.772 eV corresponding to 0-9% of applied strain), followed by uniaxial tensile strain along arm-chair direction. In contrast, the ML- {MoS}_2 nanosheet is found to be less sensitive to the compressive strain applied uniaxially along both the arm-chair as well as zig-zag directions. Moreover, the charges on Mo and S atoms are not found to undergo considerable changes under the application of uniaxial strain, as the atomic motion along the other direction is free from any constraint.

  14. Change of Electronic Structures by Dopant-Induced Local Strain

    NASA Astrophysics Data System (ADS)

    Hyeong Kim, Gyu; Jeong, Sukmin

    2015-06-01

    Ag-induced Si(111)- surfaces (-Ag) exhibit unusual electronic structures that cannot be explained by the conventional rigid band model and charge transfer model. The (-Ag surfaces feature a free-electron-like parabolic band, the S1 band, that selectively shifts downward upon the adsorption of noble metal or alkali metal adatoms. Furthermore, the downward shift of S1 is independent of the type of dopants, Au, Ag, and Na. According to charge transfer analysis, Au adatoms accumulate electrons from the substrate and become negatively charged, whereas Na adatoms become positively charged, which indicates that S1 should shift in the opposite direction for both the adatoms. Investigation of calculated structures, calculation of model structures, and tight-binding analysis disclose that the changes in the electronic structure are closely related to the average Ag-Ag distance in the substrate and have their origin in the local strain induced by dopants (adatoms). This explanation implies that the electronic structure is irrespective of the dopant characters itself and paves a new way for understanding the electronic structures associated with the presence of dopants.

  15. Photonic crystal digital alloys and their band structure properties.

    PubMed

    Lee, Jeongkug; Kim, Dong-Uk; Jeon, Heonsu

    2011-09-26

    We investigated semi-disordered photonic crystals (PCs), digital alloys, and made thorough comparisons with their counterparts, random alloys. A set of diamond lattice PC digital alloys operating in a microwave regime were prepared by alternately stacking two kinds of sub-PC systems composed of alumina and silica spheres of the same size. Measured transmission spectra as well as calculated band structures revealed that when the digital alloy period is short, band-gaps of the digital alloys are practically the same as those of the random alloys. This study indicates that the concept of digital alloys holds for photons in PCs as well.

  16. Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

    SciTech Connect

    Dey, Anup; Maiti, Biswajit; Chanda, Debasree

    2014-04-14

    A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup →}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1−x}Cd{sub x}Te, and In{sub 1−x}Ga{sub x}As{sub y}P{sub 1−y} lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

  17. Structurally tunable resonant absorption bands in ultrathin broadband plasmonic absorbers.

    PubMed

    Butun, Serkan; Aydin, Koray

    2014-08-11

    Light absorption is a fundamental optical process playing significantly important role in wide variety of applications ranging from photovoltaics to photothermal therapy. Semiconductors have well-defined absorption bands with low-energy edge dictated by the band gap energy, therefore it is rather challenging to tune the absorption bandwidth of semiconductors. However, resonant absorbers based on plasmonic nanostructures and optical metamaterials emerged as alternative light absorbers due to spectrally selective absorption bands resulting from optical resonances. Recently, a broadband plasmonic absorber design was introduced by Aydin et al. with a reasonably high broadband absorption. Based on that design, here, structurally tunable, broadband absorbers with improved performance are demonstrated. This broadband absorber has a total thickness of 190 nm with 80% average measured absorption (90% simulated absorption) over the entire visible spectrum (400 - 700 nm). Moreover, the effect of the metal and the oxide thicknesses on the absorption spectra are investigated and results indicate that the shorter and the longer band-edge of broadband absorption can be structurally tuned with the metal and the oxide thicknesses, as well as with the resonator size. Detailed numerical simulations shed light on the type of optical resonances that contribute to the broadband absorption response and provide a design guideline for realizing plasmonic absorbers with structurally tunable bandwidths.

  18. Electronic structure tuning via surface modification in semimetallic nanowires

    NASA Astrophysics Data System (ADS)

    Sanchez-Soares, Alfonso; O'Donnell, Conor; Greer, James C.

    2016-12-01

    Electronic structure properties of nanowires (NWs) with diameters of 1.5 and 3 nm based on semimetallic α -Sn are investigated by employing density functional theory and perturbative GW methods. We explore the dependence of electron affinity, band structure, and band-gap values with crystallographic orientation, NW cross-sectional size, and surface passivants of varying electronegativity. We consider four chemical terminations in our study: methyl (CH3), hydrogen (H ), hydroxyl (OH ), and fluorine (F ). Results suggest a high degree of elasticity of Sn-Sn bonds within the Sn NWs' cores with no significant structural variations for nanowires with different surface passivants. Direct band gaps at Brillouin-zone centers are found for most studied structures with quasiparticle corrected band-gap magnitudes ranging from 0.25 to 3.54 eV in 1.5-nm-diameter structures, indicating an exceptional range of properties for semimetal NWs below the semimetal-to-semiconductor transition. Band-gap variations induced by changes in surface passivants indicate the possibility of realizing semimetal-semiconductor interfaces in NWs with constant cross-section and crystallographic orientation, allowing the design of novel dopant-free NW-based electronic devices.

  19. Feasibility study of electron transfer quantum well infrared photodetectors for spectral tuning in the long-wave infrared band

    NASA Astrophysics Data System (ADS)

    Jolley, Greg; Dehdashti Akhavan, Nima; Umana-Membreno, Gilberto; Antoszewski, Jarek; Faraone, Lorenzo

    2013-11-01

    An electron transfer quantum well infrared photodetector (QWIP) consisting of repeating units of two coupled quantum wells (QWs) is capable of exhibiting a two color voltage dependent spectral response. However, significant electron transfer between the coupled QWs is required for spectral tuning, which may require the application of relatively high electric fields. Also, the band structure of coupled quantum wells is more complicated in comparison to a regular quantum well and, therefore, it is not always obvious if an electron transfer QWIP can be designed such that it meets specific performance characteristics. This paper presents a feasibility study of the electron transfer QWIP and its suitability for spectral tuning. Self consistent calculations have been performed of the bandstructure and the electric field that results from electron population within the quantum wells, from which the optical characteristics have been obtained. The band structure, spectral response, and the resonant final state energy locations have been compared with standard QWIPs. It is shown that spectral tuning in the long-wave infrared band can be achieved over a wide wavelength range of several microns while maintaining a relatively narrow spectral response FWHM. However, the total absorption strength is more limited in comparison to a standard QWIP, since the higher QW doping densities require much higher electric fields for electron transfer.

  20. Feasibility study of electron transfer quantum well infrared photodetectors for spectral tuning in the long-wave infrared band

    SciTech Connect

    Jolley, Greg; Dehdashti Akhavan, Nima; Umana-Membreno, Gilberto; Antoszewski, Jarek; Faraone, Lorenzo

    2013-11-21

    An electron transfer quantum well infrared photodetector (QWIP) consisting of repeating units of two coupled quantum wells (QWs) is capable of exhibiting a two color voltage dependent spectral response. However, significant electron transfer between the coupled QWs is required for spectral tuning, which may require the application of relatively high electric fields. Also, the band structure of coupled quantum wells is more complicated in comparison to a regular quantum well and, therefore, it is not always obvious if an electron transfer QWIP can be designed such that it meets specific performance characteristics. This paper presents a feasibility study of the electron transfer QWIP and its suitability for spectral tuning. Self consistent calculations have been performed of the bandstructure and the electric field that results from electron population within the quantum wells, from which the optical characteristics have been obtained. The band structure, spectral response, and the resonant final state energy locations have been compared with standard QWIPs. It is shown that spectral tuning in the long-wave infrared band can be achieved over a wide wavelength range of several microns while maintaining a relatively narrow spectral response FWHM. However, the total absorption strength is more limited in comparison to a standard QWIP, since the higher QW doping densities require much higher electric fields for electron transfer.