Advanced electromagnetic methods for aerospace vehicles

NASA Technical Reports Server (NTRS)

Balanis, Constantine A.; El-Sharawy, El-Budawy; Hashemi-Yeganeh, Shahrokh; Aberle, James T.; Birtcher, Craig R.

1991-01-01

The Advanced Helicopter Electromagnetics is centered on issues that advance technology related to helicopter electromagnetics. Progress was made on three major topics: composite materials; precipitation static corona discharge; and antenna technology. In composite materials, the research has focused on the measurements of their electrical properties, and the modeling of material discontinuities and their effect on the radiation pattern of antennas mounted on or near material surfaces. The electrical properties were used to model antenna performance when mounted on composite materials. Since helicopter platforms include several antenna systems at VHF and UHF bands, measuring techniques are being explored that can be used to measure the properties at these bands. The effort on corona discharge and precipitation static was directed toward the development of a new two dimensional Voltage Finite Difference Time Domain computer program. Results indicate the feasibility of using potentials for simulating electromagnetic problems in the cases where potentials become primary sources. In antenna technology the focus was on Polarization Diverse Conformal Microstrip Antennas, Cavity Backed Slot Antennas, and Varactor Tuned Circular Patch Antennas. Numerical codes were developed for the analysis of two probe fed rectangular and circular microstrip patch antennas fed by resistive and reactive power divider networks.

Astrobiology Learning Progressions: Linking Astrobiology Concepts with the 3D Learning Paradigm of NGSS

NASA Astrophysics Data System (ADS)

Scalice, D.; Davis, H. B.; Leach, D.; Chambers, N.

2016-12-01

The Next Generation Science Standards (NGSS) introduce a Framework for teaching and learning with three interconnected "dimensions:" Disciplinary Core Ideas (DCI's), Cross-cutting Concepts (CCC's), and Science and Engineering Practices (SEP's). This "3D" Framework outlines progressions of learning from K-12 based on the DCI's, detailing which parts of a concept should be taught at each grade band. We used these discipline-based progressions to synthesize interdisciplinary progressions for core concepts in astrobiology, such as the origins of life, what makes a world habitable, biosignatures, and searching for life on other worlds. The final product is an organizing tool for lesson plans, learning media, and other educational materials in astrobiology, as well as a fundamental resource in astrobiology education that serves both educators and scientists as they plan and carry out their programs for learners.

Relativistic GW calculations on CH3NH3PbI3 and CH3NH3SnI3 perovskites for solar cell applications.

PubMed

Umari, Paolo; Mosconi, Edoardo; De Angelis, Filippo

2014-03-26

Hybrid AMX3 perovskites (A = Cs, CH3NH3; M = Sn, Pb; X = halide) have revolutionized the scenario of emerging photovoltaic technologies, with very recent results demonstrating 15% efficient solar cells. The CH3NH3PbI3/MAPb(I(1-x)Cl(x))3 perovskites have dominated the field, while the similar CH3NH3SnI3 has not been exploited for photovoltaic applications. Replacement of Pb by Sn would facilitate the large uptake of perovskite-based photovoltaics. Despite the extremely fast progress, the materials electronic properties which are key to the photovoltaic performance are relatively little understood. Density Functional Theory electronic structure methods have so far delivered an unbalanced description of Pb- and Sn-based perovskites. Here we develop an effective GW method incorporating spin-orbit coupling which allows us to accurately model the electronic, optical and transport properties of CH3NH3SnI3 and CH3NH3PbI3, opening the way to new materials design. The different CH3NH3SnI3 and CH3NH3PbI3 electronic properties are discussed in light of their exploitation for solar cells, and found to be dominantly due to relativistic effects. These effects stabilize the CH3NH3PbI3 material towards oxidation, by inducing a deeper valence band edge. Relativistic effects, however, also increase the material band-gap compared to CH3NH3SnI3, due to the valence band energy downshift (~0.7 eV) being only partly compensated by the conduction band downshift (~0.2 eV).

Relativistic GW calculations on CH3NH3PbI3 and CH3NH3SnI3 Perovskites for Solar Cell Applications

PubMed Central

Umari, Paolo; Mosconi, Edoardo; De Angelis, Filippo

2014-01-01

Hybrid AMX3 perovskites (A = Cs, CH3NH3; M = Sn, Pb; X = halide) have revolutionized the scenario of emerging photovoltaic technologies, with very recent results demonstrating 15% efficient solar cells. The CH3NH3PbI3/MAPb(I1−xClx)3 perovskites have dominated the field, while the similar CH3NH3SnI3 has not been exploited for photovoltaic applications. Replacement of Pb by Sn would facilitate the large uptake of perovskite-based photovoltaics. Despite the extremely fast progress, the materials electronic properties which are key to the photovoltaic performance are relatively little understood. Density Functional Theory electronic structure methods have so far delivered an unbalanced description of Pb- and Sn-based perovskites. Here we develop an effective GW method incorporating spin-orbit coupling which allows us to accurately model the electronic, optical and transport properties of CH3NH3SnI3 and CH3NH3PbI3, opening the way to new materials design. The different CH3NH3SnI3 and CH3NH3PbI3 electronic properties are discussed in light of their exploitation for solar cells, and found to be dominantly due to relativistic effects. These effects stabilize the CH3NH3PbI3 material towards oxidation, by inducing a deeper valence band edge. Relativistic effects, however, also increase the material band-gap compared to CH3NH3SnI3, due to the valence band energy downshift (~0.7 eV) being only partly compensated by the conduction band downshift (~0.2 eV). PMID:24667758

Progress in piezo-phototronic effect modulated photovoltaics.

PubMed

Que, Miaoling; Zhou, Ranran; Wang, Xiandi; Yuan, Zuqing; Hu, Guofeng; Pan, Caofeng

2016-11-02

Wurtzite structured materials, like ZnO, GaN, CdS, and InN, simultaneously possess semiconductor and piezoelectric properties. The inner-crystal piezopotential induced by external strain can effectively tune/control the carrier generation, transport and separation/combination processes at the metal-semiconductor contact or p-n junction, which is called the piezo-phototronic effect. This effect can efficiently enhance the performance of photovoltaic devices based on piezoelectric semiconductor materials by utilizing the piezo-polarization charges at the junction induced by straining, which can modulate the energy band of the piezoelectric material and then accelerate or prevent the separation process of the photon-generated electrons and vacancies. This paper introduces the fundamental physics principles of the piezo-phototronic effect, and reviews recent progress in piezo-phototronic effect enhanced solar cells, including solar cells based on semiconductor nanowire, organic/inorganic materials, quantum dots, and perovskite. The piezo-phototronic effect is suggested as a suitable basis for the development of an innovative method to enhance the performance of solar cells based on piezoelectric semiconductors by applied extrinsic strains, which might be appropriate for fundamental research and potential applications in various areas of optoelectronics.

Progress in piezo-phototronic effect modulated photovoltaics

NASA Astrophysics Data System (ADS)

Que, Miaoling; Zhou, Ranran; Wang, Xiandi; Yuan, Zuqing; Hu, Guofeng; Pan, Caofeng

2016-11-01

Wurtzite structured materials, like ZnO, GaN, CdS, and InN, simultaneously possess semiconductor and piezoelectric properties. The inner-crystal piezopotential induced by external strain can effectively tune/control the carrier generation, transport and separation/combination processes at the metal-semiconductor contact or p-n junction, which is called the piezo-phototronic effect. This effect can efficiently enhance the performance of photovoltaic devices based on piezoelectric semiconductor materials by utilizing the piezo-polarization charges at the junction induced by straining, which can modulate the energy band of the piezoelectric material and then accelerate or prevent the separation process of the photon-generated electrons and vacancies. This paper introduces the fundamental physics principles of the piezo-phototronic effect, and reviews recent progress in piezo-phototronic effect enhanced solar cells, including solar cells based on semiconductor nanowire, organic/inorganic materials, quantum dots, and perovskite. The piezo-phototronic effect is suggested as a suitable basis for the development of an innovative method to enhance the performance of solar cells based on piezoelectric semiconductors by applied extrinsic strains, which might be appropriate for fundamental research and potential applications in various areas of optoelectronics.

Discrete Analysis of Damage and Shear Banding in Argillaceous Rocks

NASA Astrophysics Data System (ADS)

Dinç, Özge; Scholtès, Luc

2018-05-01

A discrete approach is proposed to study damage and failure processes taking place in argillaceous rocks which present a transversely isotropic behavior. More precisely, a dedicated discrete element method is utilized to provide a micromechanical description of the mechanisms involved. The purpose of the study is twofold: (1) presenting a three-dimensional discrete element model able to simulate the anisotropic macro-mechanical behavior of the Callovo-Oxfordian claystone as a particular case of argillaceous rocks; (2) studying how progressive failure develops in such material. Material anisotropy is explicitly taken into account in the numerical model through the introduction of weakness planes distributed at the interparticle scale following predefined orientation and intensity. Simulations of compression tests under plane-strain and triaxial conditions are performed to clarify the development of damage and the appearance of shear bands through micromechanical analyses. The overall mechanical behavior and shear banding patterns predicted by the numerical model are in good agreement with respect to experimental observations. Both tensile and shear microcracks emerging from the modeling also present characteristics compatible with microstructural observations. The numerical results confirm that the global failure of argillaceous rocks is well correlated with the mechanisms taking place at the local scale. Specifically, strain localization is shown to directly result from shear microcracking developing with a preferential orientation distribution related to the orientation of the shear band. In addition, localization events presenting characteristics similar to shear bands are observed from the early stages of the loading and might thus be considered as precursors of strain localization.

Cooled optical filters for Q-band infrared astronomy (15-40 μm)

NASA Astrophysics Data System (ADS)

Hawkins, Gary J.; Sherwood, Richard E.; Djotni, Karim; Threadgold, Timothy M.

2016-07-01

With a growing interest in mid- and far-infrared astronomy using cooled imaging and spectrometer instruments in highaltitude observatories and spaceflight telescopes, it is becoming increasingly important to characterise and assess the spectral performance of cooled multilayer filters across the Q-band atmospheric window. This region contains spectral features emitted by many astrophysical phenomena and objects fundamental to circumstellar and planetary formation theories. However extending interference filtering to isolate radiation at progressively longer wavelengths and improve photometric accuracy is an area of ongoing and challenging thin-film research. We have successfully fabricated cooled bandpass and edge filters with high durability for operation across the 15-30 μm Q-band region. In this paper we describe the rationale for selection of optical materials and properties of fabricated thin-film coatings for this region, together with FTIR spectral measurements and assessment of environmental durability.

Multifunctional porous graphene for nanoelectronics and hydrogen storage: new properties revealed by first principle calculations.

PubMed

Du, Aijun; Zhu, Zhonghua; Smith, Sean C

2010-03-10

The lack of an obvious "band gap" is a formidable hurdle for making a nanotransistor from graphene. Here, we use density functional calculations to demonstrate for the first time that porosity such as evidenced in recently synthesized porous graphene ( http://www.sciencedaily.com/releases/2009/11/091120084337.htm ) opens a band gap. The size of the band gap (3.2 eV) is comparable to most popular photocatalytic titania and graphitic C(3)N(4) materials. In addition, the adsorption of hydrogen on Li-decorated porous graphene is much stronger than that in regular Li-doped graphene due to the natural separation of Li cations, leading to a potential hydrogen storage gravimetric capacity of 12 wt %. In light of the most recent experimental progress on controlled synthesis, these results uncover new potential for the practical application of porous graphene in nanoelectronics and clean energy.

Spintronics Based on Topological Insulators

NASA Astrophysics Data System (ADS)

Fan, Yabin; Wang, Kang L.

2016-10-01

Spintronics using topological insulators (TIs) as strong spin-orbit coupling (SOC) materials have emerged and shown rapid progress in the past few years. Different from traditional heavy metals, TIs exhibit very strong SOC and nontrivial topological surface states that originate in the bulk band topology order, which can provide very efficient means to manipulate adjacent magnetic materials when passing a charge current through them. In this paper, we review the recent progress in the TI-based magnetic spintronics research field. In particular, we focus on the spin-orbit torque (SOT)-induced magnetization switching in the magnetic TI structures, spin-torque ferromagnetic resonance (ST-FMR) measurements in the TI/ferromagnet structures, spin pumping and spin injection effects in the TI/magnet structures, as well as the electrical detection of the surface spin-polarized current in TIs. Finally, we discuss the challenges and opportunities in the TI-based spintronics field and its potential applications in ultralow power dissipation spintronic memory and logic devices.

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges.

PubMed

Duan, Xidong; Wang, Chen; Pan, Anlian; Yu, Ruqin; Duan, Xiangfeng

2015-12-21

The discovery of graphene has ignited intensive interest in two-dimensional layered materials (2DLMs). These 2DLMs represent a new class of nearly ideal 2D material systems for exploring fundamental chemistry and physics at the limit of single-atom thickness, and have the potential to open up totally new technological opportunities beyond the reach of existing materials. In general, there are a wide range of 2DLMs in which the atomic layers are weakly bonded together by van der Waals interactions and can be isolated into single or few-layer nanosheets. The van der Waals interactions between neighboring atomic layers could allow much more flexible integration of distinct materials to nearly arbitrarily combine and control different properties at the atomic scale. The transition metal dichalcogenides (TMDs) (e.g., MoS2, WSe2) represent a large family of layered materials, many of which exhibit tunable band gaps that can undergo a transition from an indirect band gap in bulk crystals to a direct band gap in monolayer nanosheets. These 2D-TMDs have thus emerged as an exciting class of atomically thin semiconductors for a new generation of electronic and optoelectronic devices. Recent studies have shown exciting potential of these atomically thin semiconductors, including the demonstration of atomically thin transistors, a new design of vertical transistors, as well as new types of optoelectronic devices such as tunable photovoltaic devices and light emitting devices. In parallel, there have also been considerable efforts in developing diverse synthetic approaches for the rational growth of various forms of 2D materials with precisely controlled chemical composition, physical dimension, and heterostructure interface. Here we review the recent efforts, progress, opportunities and challenges in exploring the layered TMDs as a new class of atomically thin semiconductors.

System and method for progressive band selection for hyperspectral images

NASA Technical Reports Server (NTRS)

Fisher, Kevin (Inventor)

2013-01-01

Disclosed herein are systems, methods, and non-transitory computer-readable storage media for progressive band selection for hyperspectral images. A system having module configured to control a processor to practice the method calculates a virtual dimensionality of a hyperspectral image having multiple bands to determine a quantity Q of how many bands are needed for a threshold level of information, ranks each band based on a statistical measure, selects Q bands from the multiple bands to generate a subset of bands based on the virtual dimensionality, and generates a reduced image based on the subset of bands. This approach can create reduced datasets of full hyperspectral images tailored for individual applications. The system uses a metric specific to a target application to rank the image bands, and then selects the most useful bands. The number of bands selected can be specified manually or calculated from the hyperspectral image's virtual dimensionality.

Limits of transparency of transparent conducting oxides

NASA Astrophysics Data System (ADS)

Peelaers, Hartwin

A fundamental understanding of the factors that limit transparency in transparent conducting oxides (TCOs) is essential for further progress in materials and applications. These materials have a sufficiently large band gap, so that direct optical transitions do not lead to absorption of light within the visible spectrum. Since the presence of free carriers is essential for conductivity and thus for device applications, this introduces the possibility of additional absorption processes. In particular, indirect processes are possible, and these will constitute a fundamental limit of the material. The Drude theory is widely used to describe free-carrier absorption, but it is phenomenological in nature and tends to work poorly at shorter wavelengths, where band-structure effects are important. We will present calculations of phonon- and defect-assisted free-carrier absorption in a TCO completely from first principles. We will focus in detail on SnO2, but the methodology is general and we will also compare the results obtained for other TCO materials such as In2O3. These calculations provide not just quantitative results but also deeper insights in the mechanisms that govern absorption processes, which is essential for engineering improved materials to be used in more efficient devices. This work was performed in collaboration with E. Kioupakis and C.G. Van de Walle and was supported by ARO and NSF.

Jupiter Systems Data Analysis Program Galileo Multi-Spectral Analysis of the Galilean Satellites

NASA Technical Reports Server (NTRS)

Hendrix, Amanda; Carlson, Robert; Smythe, William

2002-01-01

Progress was made on this project at the University of Colorado, particularly concerning analysis of data of the galilean moons Io and Europa. The goal of the Io portion of this study is to incorporate Near Infrared Mapping Spectrometer (NIMS) measured sulfur dioxide (SO2) frost amounts into models used with Ultraviolet spectrometer (UVS) spectra, in order to better constrain SO2 gas amounts determined by the UVS. The overall goal of this portion of the study is to better understand the thickness and distribution of Io's SO2 atmosphere. The goal of the analysis of the Europa data is to better understand the source of the UV absorption feature centered near 280 rim which has been noted in disk-integrated spectra primarily on the trailing hemisphere. The NIMS data indicate asymmetric water ice bands on Europa, particularly over the trailing hemisphere, and especially concentrated in the visibly dark regions associated with chaotic terrain and lines. The UPS data, the first-ever disk-resolved UV spectra of Europa, shown that the UV absorber is likely concentrated in regions where the NIMS data show asymmetric water ice bands. The material that produces both spectral features is likely the same, and we use data from both wavelength regions to better understand this material, and whether it is endogenically or exogenically produced. This work is still in progress at JPL.

A polymer dataset for accelerated property prediction and design.

PubMed

Huan, Tran Doan; Mannodi-Kanakkithodi, Arun; Kim, Chiho; Sharma, Vinit; Pilania, Ghanshyam; Ramprasad, Rampi

2016-03-01

Emerging computation- and data-driven approaches are particularly useful for rationally designing materials with targeted properties. Generally, these approaches rely on identifying structure-property relationships by learning from a dataset of sufficiently large number of relevant materials. The learned information can then be used to predict the properties of materials not already in the dataset, thus accelerating the materials design. Herein, we develop a dataset of 1,073 polymers and related materials and make it available at http://khazana.uconn.edu/. This dataset is uniformly prepared using first-principles calculations with structures obtained either from other sources or by using structure search methods. Because the immediate target of this work is to assist the design of high dielectric constant polymers, it is initially designed to include the optimized structures, atomization energies, band gaps, and dielectric constants. It will be progressively expanded by accumulating new materials and including additional properties calculated for the optimized structures provided.

Material challenges for solar cells in the twenty-first century: directions in emerging technologies.

PubMed

Almosni, Samy; Delamarre, Amaury; Jehl, Zacharie; Suchet, Daniel; Cojocaru, Ludmila; Giteau, Maxime; Behaghel, Benoit; Julian, Anatole; Ibrahim, Camille; Tatry, Léa; Wang, Haibin; Kubo, Takaya; Uchida, Satoshi; Segawa, Hiroshi; Miyashita, Naoya; Tamaki, Ryo; Shoji, Yasushi; Yoshida, Katsuhisa; Ahsan, Nazmul; Watanabe, Kentaro; Inoue, Tomoyuki; Sugiyama, Masakazu; Nakano, Yoshiaki; Hamamura, Tomofumi; Toupance, Thierry; Olivier, Céline; Chambon, Sylvain; Vignau, Laurence; Geffroy, Camille; Cloutet, Eric; Hadziioannou, Georges; Cavassilas, Nicolas; Rale, Pierre; Cattoni, Andrea; Collin, Stéphane; Gibelli, François; Paire, Myriam; Lombez, Laurent; Aureau, Damien; Bouttemy, Muriel; Etcheberry, Arnaud; Okada, Yoshitaka; Guillemoles, Jean-François

2018-01-01

Photovoltaic generation has stepped up within the last decade from outsider status to one of the important contributors of the ongoing energy transition, with about 1.7% of world electricity provided by solar cells. Progress in materials and production processes has played an important part in this development. Yet, there are many challenges before photovoltaics could provide clean, abundant, and cheap energy. Here, we review this research direction, with a focus on the results obtained within a Japan-French cooperation program, NextPV, working on promising solar cell technologies. The cooperation was focused on efficient photovoltaic devices, such as multijunction, ultrathin, intermediate band, and hot-carrier solar cells, and on printable solar cell materials such as colloidal quantum dots.

Implementation of a Smeared Crack Band Model in a Micromechanics Framework

NASA Technical Reports Server (NTRS)

Pineda, Evan J.; Bednarcyk, Brett A.; Waas, Anthony M.; Arnold, Steven M.

2012-01-01

The smeared crack band theory is implemented within the generalized method of cells and high-fidelity generalized method of cells micromechanics models to capture progressive failure within the constituents of a composite material while retaining objectivity with respect to the size of the discretization elements used in the model. An repeating unit cell containing 13 randomly arranged fibers is modeled and subjected to a combination of transverse tension/compression and transverse shear loading. The implementation is verified against experimental data (where available), and an equivalent finite element model utilizing the same implementation of the crack band theory. To evaluate the performance of the crack band theory within a repeating unit cell that is more amenable to a multiscale implementation, a single fiber is modeled with generalized method of cells and high-fidelity generalized method of cells using a relatively coarse subcell mesh which is subjected to the same loading scenarios as the multiple fiber repeating unit cell. The generalized method of cells and high-fidelity generalized method of cells models are validated against a very refined finite element model.

Progressive Band Selection

NASA Technical Reports Server (NTRS)

Fisher, Kevin; Chang, Chein-I

2009-01-01

Progressive band selection (PBS) reduces spectral redundancy without significant loss of information, thereby reducing hyperspectral image data volume and processing time. Used onboard a spacecraft, it can also reduce image downlink time. PBS prioritizes an image's spectral bands according to priority scores that measure their significance to a specific application. Then it uses one of three methods to select an appropriate number of the most useful bands. Key challenges for PBS include selecting an appropriate criterion to generate band priority scores, and determining how many bands should be retained in the reduced image. The image's Virtual Dimensionality (VD), once computed, is a reasonable estimate of the latter. We describe the major design details of PBS and test PBS in a land classification experiment.

Excited State Properties of Hybrid Perovskites.

PubMed

Saba, Michele; Quochi, Francesco; Mura, Andrea; Bongiovanni, Giovanni

2016-01-19

Metal halide perovskites have come to the attention of the scientific community for the progress achieved in solar light conversion. Energy sustainability is one of the priorities of our society, and materials advancements resulting in low-cost but efficient solar cells and large-area lighting devices represent a major goal for applied research. From a basic point of view, perovskites are an exotic class of hybrid materials combining some merits of organic and inorganic semiconductors: large optical absorption, large mobilities, and tunable band gap together with the possibility to be processed in solution. When a novel class of promising semiconductors comes into the limelight, lively discussions ensue on the photophysics of band-edge excitations, because just the states close to the band edge are entailed in energy/charge transport and light emission. This was the case several decades ago for III-V semiconductors, it has been up to 10 years ago for organics, and it is currently the case for perovskites. Our aim in this Account is to rationalize the body of experimental evidence on perovskite photophysics in a coherent theoretical framework, borrowing from the knowledge acquired over the years in materials optoelectronics. A crucial question is whether photon absorption leads to a population of unbound, conductive free charges or instead excitons, neutral and insulating bound states created by Coulomb interaction just below the energy of the band gap. We first focus on the experimental estimates of the exciton binding energy (Eb): at room temperature, Eb is comparable to the thermal energy kBT in MAPbI3 and increases up to values 2-3kBT in wide band gap MAPbBr3 and MAPbCl3. Statistical considerations predict that these values, even though comparable to or larger than thermal energy, let free carriers prevail over bound excitons for all levels of excitation densities relevant for devices. The analysis of photophysics evidence confirms that all hybrid halide perovskites behave as free-charge semiconductors. Thanks to such property, in combination with band gap energies covering the entire solar spectrum, perovskites represent a promising materials platform for highly efficient, single and multijunction solar cells. Concerning the use of perovskites as color-tunable materials in light emitting devices, free-charges are not the preferred species, as they recombine radiatively through a bimolecular process that is inefficient at the charge-injection levels typical of LED operation. Strategies to overcome this limit, and thus extend the use of perovskite materials beyond solar energy conversion, could be borrowed from inorganic semiconductor optoelectronics and include the fabrication of nanostructures with reduced dimensionality to alter the electronic density of states, as well as engineering composite materials.

Yield stress materials in soft condensed matter

NASA Astrophysics Data System (ADS)

Bonn, Daniel; Denn, Morton M.; Berthier, Ludovic; Divoux, Thibaut; Manneville, Sébastien

2017-07-01

A comprehensive review is presented of the physical behavior of yield stress materials in soft condensed matter, which encompasses a broad range of materials from colloidal assemblies and gels to emulsions and non-Brownian suspensions. All these disordered materials display a nonlinear flow behavior in response to external mechanical forces due to the existence of a finite force threshold for flow to occur: the yield stress. Both the physical origin and rheological consequences associated with this nonlinear behavior are discussed and an overview is given of experimental techniques available to measure the yield stress. Recent progress is discussed concerning a microscopic theoretical description of the flow dynamics of yield stress materials, emphasizing, in particular, the role played by relaxation time scales, the interplay between shear flow and aging behavior, the existence of inhomogeneous shear flows and shear bands, wall slip, and nonlocal effects in confined geometries.

The hard x-ray imager onboard IXO

NASA Astrophysics Data System (ADS)

Nakazawa, Kazuhiro; Takahashi, Tadayuki; Limousin, Olivier; Kokubun, Motohide; Watanabe, Shin; Laurent, Philippe; Arnaud, Monique; Tajima, Hiroyasu

2010-07-01

The Hard X-ray Imager (HXI) is one of the instruments onboard International X-ray Observatory (IXO), to be launched into orbit in 2020s. It covers the energy band of 10-40 keV, providing imaging-spectroscopy with a field of view of 8 x 8 arcmin2. The HXI is attached beneath the Wide Field Imager (WFI) covering 0.1-15 keV. Combined with the super-mirror coating on the mirror assembly, this configuration provides observation of X-ray source in wide energy band (0.1-40.0 keV) simultaneously, which is especially important for varying sources. The HXI sensor part consists of the semiconductor imaging spectrometer, using Si in the medium energy detector and CdTe in the high energy detector as its material, and an active shield covering its back to reduce background in orbit. The HXI technology is based on those of the Japanese-lead new generation X-ray observatory ASTRO-H, and partly from those developed for Simbol-X. Therefore, the technological development is in good progress. In the IXO mission, HXI will provide a major assets to identify the nature of the object by penetrating into thick absorbing materials and determined the inherent spectral shape in the energy band well above the structure around Fe-K lines and edges.

Antibacterial nanosilver coated orthodontic bands with potential implications in dentistry.

PubMed

Prabha, Rahul Damodaran; Kandasamy, Rajasigamani; Sivaraman, U Sajeev; Nandkumar, Maya A; Nair, Prabha D

2016-10-01

Fixed orthodontic treatment, an indispensable procedure in orthodontics, necessitates insertion of dental bands. Insertion of band material could also introduce a site of plaque retention. It was hypothesized that band materials with slow-release antimicrobial properties could help in sustained infection control, prevention of dental plaque formation and further associated health risks. Considering the known antimicrobial proprieties of silver, a coating of silver nanoparticle (SNP) onto the stainless steel bands was done and characterized for its beneficial properties in the prevention of plaque accumulation. Coatings of SNPs on conventional stainless steel dental bands were prepared using thermal evaporation technology. The coated dental bands were characterized for their physicochemical properties and evaluated for antimicrobial activity and biocompatibility. The physiochemical characterization of band material both coated and uncoated was carried out using scanning electron microscope, energy dispersive spectroscopy, atomic force microscopyand contact angle test. Biocompatibility tests for coated band material were carried using L929 mouse fibroblast cell culture and MTT [3-(4, 5-dimethyl thiazol-2-yl)-2, 5-diphenyl tetrazolium bromide] assay. Antimicrobial activity of coated band material against Gram-positive bacteria was tested. A stable and uniform coating of SNPs was obtained. The coated band materials were biocompatible as well as possessed distinct antimicrobial activity. The SNP coated dental bands could be potential antimicrobial dental bands for future clinical use. Further studies need to be done to validate the efficiency of coated band materials in oral environments.

Band Structure Characteristics of Nacreous Composite Materials with Various Defects

NASA Astrophysics Data System (ADS)

Yin, J.; Zhang, S.; Zhang, H. W.; Chen, B. S.

2016-06-01

Nacreous composite materials have excellent mechanical properties, such as high strength, high toughness, and wide phononic band gap. In order to research band structure characteristics of nacreous composite materials with various defects, supercell models with the Brick-and-Mortar microstructure are considered. An efficient multi-level substructure algorithm is employed to discuss the band structure. Furthermore, two common systems with point and line defects and varied material parameters are discussed. In addition, band structures concerning straight and deflected crack defects are calculated by changing the shear modulus of the mortar. Finally, the sensitivity of band structures to the random material distribution is presented by considering different volume ratios of the brick. The results reveal that the first band gap of a nacreous composite material is insensitive to defects under certain conditions. It will be of great value to the design and synthesis of new nacreous composite materials for better dynamic properties.

Material challenges for solar cells in the twenty-first century: directions in emerging technologies

PubMed Central

Delamarre, Amaury; Jehl, Zacharie; Suchet, Daniel; Cojocaru, Ludmila; Giteau, Maxime; Behaghel, Benoit; Julian, Anatole; Ibrahim, Camille; Tatry, Léa; Wang, Haibin; Kubo, Takaya; Uchida, Satoshi; Segawa, Hiroshi; Miyashita, Naoya; Tamaki, Ryo; Shoji, Yasushi; Yoshida, Katsuhisa; Ahsan, Nazmul; Watanabe, Kentaro; Inoue, Tomoyuki; Sugiyama, Masakazu; Nakano, Yoshiaki; Hamamura, Tomofumi; Toupance, Thierry; Olivier, Céline; Chambon, Sylvain; Vignau, Laurence; Geffroy, Camille; Cloutet, Eric; Hadziioannou, Georges; Cavassilas, Nicolas; Rale, Pierre; Cattoni, Andrea; Collin, Stéphane; Gibelli, François; Paire, Myriam; Lombez, Laurent; Aureau, Damien; Bouttemy, Muriel; Etcheberry, Arnaud; Okada, Yoshitaka

2018-01-01

Abstract Photovoltaic generation has stepped up within the last decade from outsider status to one of the important contributors of the ongoing energy transition, with about 1.7% of world electricity provided by solar cells. Progress in materials and production processes has played an important part in this development. Yet, there are many challenges before photovoltaics could provide clean, abundant, and cheap energy. Here, we review this research direction, with a focus on the results obtained within a Japan–French cooperation program, NextPV, working on promising solar cell technologies. The cooperation was focused on efficient photovoltaic devices, such as multijunction, ultrathin, intermediate band, and hot-carrier solar cells, and on printable solar cell materials such as colloidal quantum dots. PMID:29707072

Band gap structures for 2D phononic crystals with composite scatterer

NASA Astrophysics Data System (ADS)

Qi, Xiao-qiao; Li, Tuan-jie; Zhang, Jia-long; Zhang, Zhen; Tang, Ya-qiong

2018-05-01

We investigated the band gap structures in two-dimensional phononic crystals with composite scatterer. The composite scatterers are composed of two materials (Bragg scattering type) or three materials (locally resonance type). The finite element method is used to calculate the band gap structure, eigenmodes and transmission spectrum. The variation of the location and width of band gap are also investigated as a function of material ratio in the scatterer. We have found that the change trends the widest band gap of the two phononic crystals are different as the material ratio changing. In addition to this, there are three complete band gaps at most for the Bragg-scattering-type phononic crystals in the first six bands; however, the locally resonance-type phononic crystals exist only two complete band gap at most in the first six bands. The gap-tuning effect can be controlled by the material ratio in the scatterer.

Turning copper metal into a Weyl semimetal

NASA Astrophysics Data System (ADS)

Du, Yongping; Kan, Er-jun; Xu, Hu; Savrasov, Sergey Y.; Wan, Xiangang

2018-06-01

A search for new topological quantum systems is challenging due to the requirement of nontrivial band connectivity that leads to protected surface states of electrons. Progress in this field was primarily due to a realization of a band inversion mechanism between even and odd parity states that was proven to be very useful in both predicting many such systems and our understanding of their topological properties. Despite many proposed materials that assume the band inversion between s and p (or p /d , d /f ) electrons, here, we explore a different mechanism where the occupied d states subjected to a tetrahedral crystal field produce an active t2 g manifold behaving as a state with an effective orbital momentum equal to -1 , and pushing jeff=1 /2 doublet at a higher energy. Via hybridization with nearest-neighbor orbitals realizable, e.g., in a zinc-blende structural environment, this allows a formation of odd parity state whose subsequent band inversion with an unoccupied s band becomes possible, prompting us to look for the compounds with Cu+1 ionic state. Chemical valence arguments coupled to a search in the materials database of zinc-blende-like lattice space groups Td2 (F 4 ¯3 m ) lead us to systematically investigate electronic structures and topological properties of CuY (Y =F , Cl, Br, I) and Cu X O (X =Li , Na, K, Rb) families of compounds. Our theoretical results show that CuF displays a behavior characteristic of an ideal Weyl semimetal with 24 Weyl nodes at the bulk Brillouin zone. We also find that other compounds, CuNaO and CuLiO, are the s -d inversion-type topological insulators. Results for their electronic structures and corresponding surfaces states are presented and discussed in the context of their topological properties.

Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

PubMed

Zhang, Panlong; Wang, Haibo; Yan, Donghang

2017-09-01

A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains

NASA Astrophysics Data System (ADS)

Christol, P.; Rodriguez, J.-B.

2017-11-01

Infrared photodetectors based on type-II InAs/GaSb superlattice (T2SL) material has been given a lot of attention this past decade, in particular by U.S. laboratories. Among the advantages of this material system, one can cite the possibility to span a large Infrared (IR) range (3μm to 30 μm) by tailoring the band-gap independently from the lattice constant, allowing addressing many applications by the same fabrication process and the realization of multi-color IR sensors for high performance imaging systems. Recently, the maturity of the growth of the quantum structure by molecular beam epitaxy (MBE) and progress on the processing resulted in the demonstration of high-performance mega-pixel focal plane arrays (FPA) in both the mid-wavelength (MWIR) and the long-wavelength (LWIR) infrared spectral bands [1]. Consequently, InAs/GaSb T2SL photodetector can be now considered as a new infrared technology which can be complementary to InSb, MCT or QWIPs technologies. After some reminders on InAs/GaSb T2SL quantum structure properties, we present in this communication the results obtained by the IES laboratory, from Montpellier University, France, for photodiodes operating in the MWIR spectral domains. We then complete the paper by the main results reached by others laboratories for T2SL detectors operating from MWIR to VLWIR spectral ranges.

Approach to failure in porous granular materials under compression

NASA Astrophysics Data System (ADS)

Kun, Ferenc; Varga, Imre; Lennartz-Sassinek, Sabine; Main, Ian G.

2013-12-01

We investigate the approach to catastrophic failure in a model porous granular material undergoing uniaxial compression. A discrete element computational model is used to simulate both the microstructure of the material and the complex dynamics and feedbacks involved in local fracturing and the production of crackling noise. Under strain-controlled loading, microcracks initially nucleate in an uncorrelated way all over the sample. As loading proceeds the damage localizes into a narrow damage band inclined at 30∘-45∘ to the load direction. Inside the damage band the material is crushed into a poorly sorted mixture of mainly fine powder hosting some larger fragments. The mass probability density distribution of particles in the damage zone is a power law of exponent 2.1, similar to a value of 1.87 inferred from observations of the length distribution of wear products (gouge) in natural and laboratory faults. Dynamic bursts of radiated energy, analogous to acoustic emissions observed in laboratory experiments on porous sedimentary rocks, are identified as correlated trails or cascades of local ruptures that emerge from the stress redistribution process. As the system approaches macroscopic failure consecutive bursts become progressively more correlated. Their size distribution is also a power law, with an equivalent Gutenberg-Richter b value of 1.22 averaged over the whole test, ranging from 3 to 0.5 at the time of failure, all similar to those observed in laboratory tests on granular sandstone samples. The formation of the damage band itself is marked by a decrease in the average distance between consecutive bursts and an emergent power-law correlation integral of event locations with a correlation dimension of 2.55, also similar to those observed in the laboratory (between 2.75 and 2.25).

Applications of Advanced, Waveform Based AE Techniques for Testing Composite Materials

NASA Technical Reports Server (NTRS)

Prosser, William H.

1996-01-01

Advanced, waveform based acoustic emission (AE) techniques have been previously used to evaluate damage progression in laboratory tests of composite coupons. In these tests, broad band, high fidelity acoustic sensors were used to detect signals which were then digitized and stored for analysis. Analysis techniques were based on plate mode wave propagation characteristics. This approach, more recently referred to as Modal AE, provides an enhanced capability to discriminate and eliminate noise signals from those generated by damage mechanisms. This technique also allows much more precise source location than conventional, threshold crossing arrival time determination techniques. To apply Modal AE concepts to the interpretation of AE on larger composite structures, the effects of wave propagation over larger distances and through structural complexities must be well characterized and understood. In this research, measurements were made of the attenuation of the extensional and flexural plate mode components of broad band simulated AE signals in large composite panels. As these materials have applications in a cryogenic environment, the effects of cryogenic insulation on the attenuation of plate mode AE signals were also documented.

HgCdTe barrier infrared detectors

NASA Astrophysics Data System (ADS)

Kopytko, M.; Rogalski, A.

2016-05-01

In the last decade, new strategies to achieve high-operating temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, and multistage (cascade) infrared detectors. The ability to tune the positions of the conduction and valence band edges independently in a broken-gap type-II superlattices is especially helpful in the design of unipolar barriers. This idea has been also implemented in HgCdTe ternary material system. However, the implementation of this detector structure in HgCdTe material system is not straightforward due to the existence of a valence band discontinuity (barrier) at the absorber-barrier interface. In this paper we present status of HgCdTe barrier detectors with emphasis on technological progress in fabrication of MOCVD-grown HgCdTe barrier detectors achieved recently at the Institute of Applied Physics, Military University of Technology. Their performance is comparable with state-of-the-art of HgCdTe photodiodes. From the perspective of device fabrication their important technological advantage results from less stringent surface passivation requirements and tolerance to threading dislocations.

Tetradymites as thermoelectrics and topological insulators

NASA Astrophysics Data System (ADS)

Heremans, Joseph P.; Cava, Robert J.; Samarth, Nitin

2017-10-01

Tetradymites are M2X3 compounds — in which M is a group V metal, usually Bi or Sb, and X is a group VI anion, Te, Se or S — that crystallize in a rhombohedral structure. Bi2Se3, Bi2Te3 and Sb2Te3 are archetypical tetradymites. Other mixtures of M and X elements produce common variants, such as Bi2Te2Se. Because tetradymites are based on heavy p-block elements, strong spin-orbit coupling greatly influences their electronic properties, both on the surface and in the bulk. Their surface electronic states are a cornerstone of frontier work on topological insulators. The bulk energy bands are characterized by small energy gaps, high group velocities, small effective masses and band inversion near the centre of the Brillouin zone. These properties are favourable for high-efficiency thermoelectric materials but make it difficult to obtain an electrically insulating bulk, which is a requirement of topological insulators. This Review outlines recent progress made in bulk and thin-film tetradymite materials for the optimization of their properties both as thermoelectrics and as topological insulators.

A polymer dataset for accelerated property prediction and design

DOE PAGES

Huan, Tran Doan; Mannodi-Kanakkithodi, Arun; Kim, Chiho; ...

2016-03-01

Emerging computation- and data-driven approaches are particularly useful for rationally designing materials with targeted properties. Generally, these approaches rely on identifying structure-property relationships by learning from a dataset of sufficiently large number of relevant materials. The learned information can then be used to predict the properties of materials not already in the dataset, thus accelerating the materials design. Herein, we develop a dataset of 1,073 polymers and related materials and make it available at http://khazana.uconn.edu/. This dataset is uniformly prepared using first-principles calculations with structures obtained either from other sources or by using structure search methods. Because the immediate targetmore » of this work is to assist the design of high dielectric constant polymers, it is initially designed to include the optimized structures, atomization energies, band gaps, and dielectric constants. As a result, it will be progressively expanded by accumulating new materials and including additional properties calculated for the optimized structures provided.« less

Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.

PubMed

Wang, Feng; Wang, Zhenxing; Jiang, Chao; Yin, Lei; Cheng, Ruiqing; Zhan, Xueying; Xu, Kai; Wang, Fengmei; Zhang, Yu; He, Jun

2017-09-01

2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides.

PubMed

Rhyee, Jong-Soo; Kim, Jin Hee

2015-03-20

Researchers have long been searching for the materials to enhance thermoelectric performance in terms of nano scale approach in order to realize phonon-glass-electron-crystal and quantum confinement effects. Peierls distortion can be a pathway to enhance thermoelectric figure-of-merit ZT by employing natural nano-wire-like electronic and thermal transport. The phonon-softening known as Kohn anomaly, and Peierls lattice distortion decrease phonon energy and increase phonon scattering, respectively, and, as a result, they lower thermal conductivity. The quasi-one-dimensional electrical transport from anisotropic band structure ensures high Seebeck coefficient in Indium Selenide. The routes for high ZT materials development of In₄Se₃ - δ are discussed from quasi-one-dimensional property and electronic band structure calculation to materials synthesis, crystal growth, and their thermoelectric properties investigations. The thermoelectric properties of In₄Se₃ - δ can be enhanced by electron doping, as suggested from the Boltzmann transport calculation. Regarding the enhancement of chemical potential, the chlorine doped In₄Se₃ - δ Cl 0.03 compound exhibits high ZT over a wide temperature range and shows state-of-the-art thermoelectric performance of ZT = 1.53 at 450 °C as an n -type material. It was proven that multiple elements doping can enhance chemical potential further. Here, we discuss the recent progress on the enhancement of thermoelectric properties in Indium Selenides by increasing chemical potential.

High performance p-type half-Heusler thermoelectric materials

NASA Astrophysics Data System (ADS)

Yu, Junjie; Xia, Kaiyang; Zhao, Xinbing; Zhu, Tiejun

2018-03-01

Half-Heusler compounds, which possess robust mechanical strength, good high temperature thermal stability and multifaceted physical properties, have been verified as a class of promising thermoelectric materials. During the last two decades, great progress has been made in half-Heusler thermoelectrics. In this review, we summarize some representative work of p-type half-Heusler materials, the thermoelectric performance of which has been remarkably enhanced in recent years. We introduce the features of the crystal and electronic structures of half-Heusler compounds, and successful strategies for optimizing electrical and thermal transport in the p-type RFeSb (R  =  V, Nb, Ta) and MCoSb (M  =  Ti, Zr, Hf) based systems, including band engineering, the formation of solid solutions and hierarchical phonon scattering. The outlook for future research directions of half-Heusler thermoelectrics is also presented.

Band Gap Tuning via Lattice Contraction and Octahedral Tilting in Perovskite Materials for Photovoltaics

DOE PAGES

Prasanna, Rohit; Gold-Parker, Aryeh; Leijtens, Tomas; ...

2017-07-13

Tin and lead iodide perovskite semiconductors of the composition AMX 3, where M is a metal and X is a halide, are leading candidates for high efficiency low cost tandem photovoltaics, in part because they have band gaps that can be tuned over a wide range by compositional substitution. We experimentally identify two competing mechanisms through which the A-site cation influences the band gap of 3D metal halide perovskites. Using a smaller A-site cation can distort the perovskite lattice in two distinct ways: by tilting the MX 6 octahedra or by simply contracting the lattice isotropically. The former effect tendsmore » to raise the band gap, while the latter tends to decrease it. Lead iodide perovskites show an increase in band gap upon partial substitution of the larger formamidinium with the smaller cesium, due to octahedral tilting. Perovskites based on tin, which is slightly smaller than lead, show the opposite trend: they show no octahedral tilting upon Cs-substitution but only a contraction of the lattice, leading to progressive reduction of the band gap. We outline a strategy to systematically tune the band gap and valence and conduction band positions of metal halide perovskites through control of the cation composition. Using this strategy, we demonstrate solar cells that harvest light in the infrared up to 1040 nm, reaching a stabilized power conversion efficiency of 17.8%, showing promise for improvements of the bottom cell of all-perovskite tandem solar cells. In conclusion, the mechanisms of cation-based band gap tuning we describe are broadly applicable to 3D metal halide perovskites and will be useful in further development of perovskite semiconductors for optoelectronic applications.« less

Band Gap Tuning via Lattice Contraction and Octahedral Tilting in Perovskite Materials for Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prasanna, Rohit; Gold-Parker, Aryeh; Leijtens, Tomas

Tin and lead iodide perovskite semiconductors of the composition AMX 3, where M is a metal and X is a halide, are leading candidates for high efficiency low cost tandem photovoltaics, in part because they have band gaps that can be tuned over a wide range by compositional substitution. We experimentally identify two competing mechanisms through which the A-site cation influences the band gap of 3D metal halide perovskites. Using a smaller A-site cation can distort the perovskite lattice in two distinct ways: by tilting the MX 6 octahedra or by simply contracting the lattice isotropically. The former effect tendsmore » to raise the band gap, while the latter tends to decrease it. Lead iodide perovskites show an increase in band gap upon partial substitution of the larger formamidinium with the smaller cesium, due to octahedral tilting. Perovskites based on tin, which is slightly smaller than lead, show the opposite trend: they show no octahedral tilting upon Cs-substitution but only a contraction of the lattice, leading to progressive reduction of the band gap. We outline a strategy to systematically tune the band gap and valence and conduction band positions of metal halide perovskites through control of the cation composition. Using this strategy, we demonstrate solar cells that harvest light in the infrared up to 1040 nm, reaching a stabilized power conversion efficiency of 17.8%, showing promise for improvements of the bottom cell of all-perovskite tandem solar cells. In conclusion, the mechanisms of cation-based band gap tuning we describe are broadly applicable to 3D metal halide perovskites and will be useful in further development of perovskite semiconductors for optoelectronic applications.« less

Band Gap Tuning via Lattice Contraction and Octahedral Tilting in Perovskite Materials for Photovoltaics.

PubMed

Prasanna, Rohit; Gold-Parker, Aryeh; Leijtens, Tomas; Conings, Bert; Babayigit, Aslihan; Boyen, Hans-Gerd; Toney, Michael F; McGehee, Michael D

2017-08-16

Tin and lead iodide perovskite semiconductors of the composition AMX 3 , where M is a metal and X is a halide, are leading candidates for high efficiency low cost tandem photovoltaics, in part because they have band gaps that can be tuned over a wide range by compositional substitution. We experimentally identify two competing mechanisms through which the A-site cation influences the band gap of 3D metal halide perovskites. Using a smaller A-site cation can distort the perovskite lattice in two distinct ways: by tilting the MX 6 octahedra or by simply contracting the lattice isotropically. The former effect tends to raise the band gap, while the latter tends to decrease it. Lead iodide perovskites show an increase in band gap upon partial substitution of the larger formamidinium with the smaller cesium, due to octahedral tilting. Perovskites based on tin, which is slightly smaller than lead, show the opposite trend: they show no octahedral tilting upon Cs-substitution but only a contraction of the lattice, leading to progressive reduction of the band gap. We outline a strategy to systematically tune the band gap and valence and conduction band positions of metal halide perovskites through control of the cation composition. Using this strategy, we demonstrate solar cells that harvest light in the infrared up to 1040 nm, reaching a stabilized power conversion efficiency of 17.8%, showing promise for improvements of the bottom cell of all-perovskite tandem solar cells. The mechanisms of cation-based band gap tuning we describe are broadly applicable to 3D metal halide perovskites and will be useful in further development of perovskite semiconductors for optoelectronic applications.

Design of phononic band gaps in functionally graded piezocomposite materials by using topology optimization

NASA Astrophysics Data System (ADS)

Vatanabe, Sandro L.; Silva, Emílio C. N.

2011-04-01

One of the properties of composite materials is the possibility of having phononic band gaps, within which sound and vibrations at certain frequencies do not propagate. These materials are called Phononic Crystals (PCs). PCs with large band gaps are of great interest for many applications, such as transducers, elastic/ acoustic filters, noise control, and vibration shields. Most of previous works concentrates on PCs made of elastic isotropic materials; however, band gaps can be enlarged by using non-isotropic materials, such as piezoelectric materials. Since the main property of PCs is the presence of band gaps, one possible way to design structures which have a desired band gap is through Topology Optimization Method (TOM). TOM is a computational technique that determines the layout of a material such that a prescribed objective is maximized. Functionally Graded Materials (FGM) are composite materials whose properties vary gradually and continuously along a specific direction within the domain of the material. One of the advantages of applying the FGM concept to TOM is that it is not necessary a discrete 0-1 result, once the material gradation is part of the solution. Therefore, the interpretation step becomes easier and the dispersion diagram obtained from the optimization is not significantly modified. In this work, the main objective is to optimize the position and width of piezocomposite materials band gaps. Finite element analysis is implemented with Bloch-Floquet theory to solve the dynamic behavior of two-dimensional functionally graded unit cells. The results demonstrate that phononic band gaps can be designed by using this methodology.

Recent Advances of Graphitic Carbon Nitride-Based Structures and Applications in Catalyst, Sensing, Imaging, and LEDs

NASA Astrophysics Data System (ADS)

Wang, Aiwu; Wang, Chundong; Fu, Li; Wong-Ng, Winnie; Lan, Yucheng

2017-10-01

The graphitic carbon nitride (g-C3N4) which is a two-dimensional conjugated polymer has drawn broad interdisciplinary attention as a low-cost, metal-free, and visible-light-responsive photocatalyst in the area of environmental remediation. The g-C3N4-based materials have excellent electronic band structures, electron-rich properties, basic surface functionalities, high physicochemical stabilities and are "earth-abundant." This review summarizes the latest progress related to the design and construction of g-C3N4-based materials and their applications including catalysis, sensing, imaging, and white-light-emitting diodes. An outlook on possible further developments in g-C3N4-based research for emerging properties and applications is also included.

P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same

DOEpatents

Guha, Subhendu; Ovshinsky, Stanford R.

1988-10-04

An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

Method for producing a thin sample band in a microchannel device

DOEpatents

Griffiths, Stewart K [Livermore, CA; Nilson, Robert H [Cardiff, CA

2004-08-03

The present invention improves the performance of microchannel systems for chemical and biological synthesis and analysis by providing a method and apparatus for producing a thin band of a species sample. Thin sample bands improve the resolution of microchannel separation processes, as well as many other processes requiring precise control of sample size and volume. The new method comprises a series of steps in which a species sample is manipulated by controlled transport through a junction formed at the intersection of four or more channels. A sample is first inserted into the end of one of these channels in the vicinity of the junction. Next, this sample is thinned by transport across the junction one or more times. During these thinning steps, flow enters the junction through one of the channels and exists through those remaining, providing a divergent flow field that progressively stretches and thins the band with each traverse of the junction. The thickness of the resulting sample band may be smaller than the channel width. Moreover, the thickness of the band may be varied and controlled by altering the method alone, without modification to the channel or junction geometries. The invention is applicable to both electroosmotic and electrophoretic transport, to combined electrokinetic transport, and to some special cases in which bulk fluid transport is driven by pressure gradients. It is further applicable to channels that are open, filled with a gel or filled with a porous or granular material.

Apparatus for producing a thin sample band in a microchannel system

DOEpatents

Griffiths, Stewart K [Livermore, CA; Nilson, Robert H [Cardiff, CA

2008-05-13

The present invention improves the performance of microchannel systems for chemical and biological synthesis and analysis by providing a method and apparatus for producing a thin band of a species sample. Thin sample bands improve the resolution of microchannel separation processes, as well as many other processes requiring precise control of sample size and volume. The new method comprises a series of steps in which a species sample is manipulated by controlled transport through a junction formed at the intersection of four or more channels. A sample is first inserted into the end of one of these channels in the vicinity of the junction. Next, this sample is thinned by transport across the junction one or more times. During these thinning steps, flow enters the junction through one of the channels and exists through those remaining, providing a divergent flow field that progressively stretches and thins the band with each traverse of the junction. The thickness of the resulting sample band may be smaller than the channel width. Moreover, the thickness of the band may be varied and controlled by altering the method alone, without modification to the channel or junction geometries. The invention is applicable to both electroosmotic and electrophoretic transport, to combined electrokinetic transport, and to some special cases in which bulk fluid transport is driven by pressure gradients. It is further applicable to channels that are open, filled with a gel or filled with a porous or granular material.

Improved photovoltaic properties of ZnTeO-based intermediate band solar cells

NASA Astrophysics Data System (ADS)

Tanaka, Tooru; Saito, Katsuhiko; Guo, Qixin; Yu, Kin Man; Walukiewicz, Wladek

2018-02-01

Highly mismatched ZnTe1-xOx (ZnTeO) alloy is one of the potential candidates for an absorber material in a bulk intermediate band solar cell (IBSC) because a narrow, O-derived intermediate band IB (E-) is formed well below the conduction band CB (E+) edge of the ZnTe. We have previously demonstrated the generation of photocurrent induced by two-step photon absorption (TSPA) in ZnTeO IBSCs using n-ZnO window layer. However, because of the large conduction band offset (CBO) between ZnTe and ZnO, only a small open circuit voltage (Voc) was observed in this structure. Here, we report our recent progress on the development of ZnTeO IBSCs with n-ZnS window layer. ZnS has a large direct band gap of 3.7 eV with an electron affinity of 3.9 eV that can realize a smaller CBO with ZnTe. We have grown n-type ZnS thin films on ZnTe substrates by molecular beam epitaxy (MBE), and demonstrated ZnTe solar cells and ZnTeO IBSCs using n-ZnS window layer with an improved VOC. Especially, a n-ZnS/i-ZnTe/p-ZnTe solar cell showed an improved Voc of 0.77 V, a large short-circuit current density of 6.7 mA/cm2 with a fill factor of 0.60, yielding the power conversion efficiency of 3.1 %, under 1 sun illumination.

Optical and electronic properties of 2 H -Mo S2 under pressure: Revealing the spin-polarized nature of bulk electronic bands

NASA Astrophysics Data System (ADS)

Brotons-Gisbert, Mauro; Segura, Alfredo; Robles, Roberto; Canadell, Enric; Ordejón, Pablo; Sánchez-Royo, Juan F.

2018-05-01

Monolayers of transition-metal dichalcogenide semiconductors present spin-valley locked electronic bands, a property with applications in valleytronics and spintronics that is usually believed to be absent in their centrosymmetric (as the bilayer or bulk) counterparts. Here we show that bulk 2 H -Mo S2 hides a spin-polarized nature of states determining its direct band gap, with the spin sequence of valence and conduction bands expected for its single layer. This relevant finding is attained by investigating the behavior of the binding energy of A and B excitons under high pressure, by means of absorption measurements and density-functional-theory calculations. These results raise an unusual situation in which bright and dark exciton degeneracy is naturally broken in a centrosymmetric material. Additionally, the phonon-assisted scattering process of excitons has been studied by analyzing the pressure dependence of the linewidth of discrete excitons observed at the absorption coefficient edge of 2 H -Mo S2 . Also, the pressure dependence of the indirect optical transitions of bulk 2 H -Mo S2 has been analyzed by absorption measurements and density-functional-theory calculations. These results reflect a progressive closure of the indirect band gap as pressure increases, indicating that metallization of bulk Mo S2 may occur at pressures higher than 26 GPa.

Nanocomposites with high thermoelectric figures of merit

NASA Technical Reports Server (NTRS)

Dresselhaus, Mildred (Inventor); Ren, Zhifeng (Inventor); Chen, Gang (Inventor)

2008-01-01

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k.sub.BT, wherein k.sub.B is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Nanocomposites with High Thermoelectric Figures of Merit

NASA Technical Reports Server (NTRS)

Chen, Gang (Inventor); Ren, Zhifeng (Inventor); Dresselhaus, Mildred (Inventor)

2015-01-01

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k(sub B)T, wherein k(sub B) is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Nanocomposites with high thermoelectric figures of merit

NASA Technical Reports Server (NTRS)

Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Dresselhaus, Mildred (Inventor)

2012-01-01

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k.sub.BT, wherein k.sub.B is the Boltzman constant and T is an average temperature of said nanocomposite composition.

High-field/high-pressure ESR

NASA Astrophysics Data System (ADS)

Sakurai, T.; Okubo, S.; Ohta, H.

2017-07-01

We present a historical review of high-pressure ESR systems with emphasis on our recent development of a high-pressure, high-field, multi-frequency ESR system. Until 2000, the X-band system was almost established using a resonator filled with dielectric materials or a combination of the anvil cell and dielectric resonators. Recent developments have shifted from that in the low-frequency region, such as X-band, to that in multi-frequency region. High-pressure, high-field, multi-frequency ESR systems are classified into two types. First are the systems that use a vector network analyzer or a quasi-optical bridge, which have high sensitivity but a limited frequency region; the second are like our system, which has a very broad frequency region covering the THz region, but lower sensitivity. We will demonstrate the usefulness of our high-pressure ESR system, in addition to its experimental limitations. We also discuss the recent progress of our system and future plans.

Detoxification of castor bean residues and the simultaneous production of tannase and phytase by solid-state fermentation using Paecilomyces variotii.

PubMed

Madeira, Jose Valdo; Macedo, Juliana Alves; Macedo, Gabriela Alves

2011-08-01

In this work, we introduce a biological detoxification method that converts toxic waste from castor beans into animal feed material. This method simultaneously induces the production of tannase and phytase by Paecilomyces variotii; both enzymes have high levels of activity and have the potential to be used in feedstuffs because they decrease overall anti-nutritional factors. The maximum tannase and phytase activities obtained were 2600 and 260 U/g after 48 and 72 h, respectively. SDS-PAGE electrophoresis of the fermented castor cake extracts revealed a reduction in ricin bands during fermentation, and the bands were no longer visible after 48 h. The cytotoxicity of the extracts was evaluated by MTT testing on RAW cells, and a progressive increase in cellular viability was obtained, reaching almost 100% after 72 h of fermentation. Copyright © 2011 Elsevier Ltd. All rights reserved.

Remote sensing research for agricultural applications. [San Joaquin County, California and Snake River Plain and Twin Falls area, Idaho

NASA Technical Reports Server (NTRS)

Colwell, R. N. (Principal Investigator); Wall, S. L.; Beck, L. H.; Degloria, S. D.; Ritter, P. R.; Thomas, R. W.; Travlos, A. J.; Fakhoury, E.

1984-01-01

Materials and methods used to characterize selected soil properties and agricultural crops in San Joaquin County, California are described. Results show that: (1) the location and widths of TM bands are suitable for detecting differences in selected soil properties; (2) the number of TM spectral bands allows the quantification of soil spectral curve form and magnitude; and (3) the spatial and geometric quality of TM data allows for the discrimination and quantification of within field variability of soil properties. The design of the LANDSAT based multiple crop acreage estimation experiment for the Idaho Department of Water Resources is described including the use of U.C. Berkeley's Survey Modeling Planning Model. Progress made on Peditor software development on MIDAS, and cooperative computing using local and remote systems is reported as well as development of MIDAS microcomputer systems.

Effective theory of monolayer TMDC double quantum dots

NASA Astrophysics Data System (ADS)

David, Alessandro; Burkard, Guido; Kormányos, Andor

2018-07-01

Monolayer transition metal dichalcogenides (TMDCs) are promising candidates for quantum technologies, such as spin qubits in quantum dots, because they are truly two-dimensional semiconductors with a direct band gap. In this work, we analyse theoretically the behaviour of a double quantum dot (DQD) system created in the conduction band of these materials, with two electrons in the (1,1) charge configuration. Motivated by recent experimental progress, we consider several scenarios, including different spin–orbit splittings in the two dots and including the case when the valley degeneracy is lifted due to an insulating ferromagnetic substrate. Finally, we discuss in which cases it is possible to reduce the low energy subspace to the lowest Kramers pairs. We find that in this case the low energy model is formally identical to the Heisenberg exchange Hamiltonian, indicating that such Kramers pairs may serve as qubit implementations.

Self-organization in precipitation reactions far from the equilibrium

PubMed Central

Nakouzi, Elias; Steinbock, Oliver

2016-01-01

Far from the thermodynamic equilibrium, many precipitation reactions create complex product structures with fascinating features caused by their unusual origins. Unlike the dissipative patterns in other self-organizing reactions, these features can be permanent, suggesting potential applications in materials science and engineering. We review four distinct classes of precipitation reactions, describe similarities and differences, and discuss related challenges for theoretical studies. These classes are hollow micro- and macrotubes in chemical gardens, polycrystalline silica carbonate aggregates (biomorphs), Liesegang bands, and propagating precipitation-dissolution fronts. In many cases, these systems show intricate structural hierarchies that span from the nanometer scale into the macroscopic world. We summarize recent experimental progress that often involves growth under tightly regulated conditions by means of wet stamping, holographic heating, and controlled electric, magnetic, or pH perturbations. In this research field, progress requires mechanistic insights that cannot be derived from experiments alone. We discuss how mesoscopic aspects of the product structures can be modeled by reaction-transport equations and suggest important targets for future studies that should also include materials features at the nanoscale. PMID:27551688

Design of radial phononic crystal using annular soft material with low-frequency resonant elastic structures

NASA Astrophysics Data System (ADS)

Gao, Nansha; Wu, Jiu Hui; Yu, Lie; Xin, Hang

2016-10-01

Using FEM, we theoretically study the vibration properties of radial phononic crystal (RPC) with annular soft material. The band structures, transmission spectra, and displacement fields of eigenmode are given to estimate the starting and cut-off frequency of band gaps. Numerical calculation results show that RPC with annular soft material can yield low-frequency band gaps below 350 Hz. Annular soft material decreases equivalent stiffness of the whole structure effectively, and makes corresponding band gaps move to the lower frequency range. Physical mechanism behind band gaps is the coupling effect between long or traveling wave in plate matrix and the vibrations of corrugations. By changing geometrical dimensions of plate thickness e, the length of silicone rubber h2, and the corrugation width b, we can control the location and width of the first band gap. These research conclusions of RPC structure with annular soft material can potentially be applied to optimize band gaps, generate filters, and design acoustic devices.

The properties of optimal two-dimensional phononic crystals with different material contrasts

NASA Astrophysics Data System (ADS)

Liu, Zong-Fa; Wu, Bin; He, Cun-Fu

2016-09-01

By modifying the spatial distribution of constituent material phases, phononic crystals (PnCs) can be designed to exhibit band gaps within which sound and vibration cannot propagate. In this paper, the developed topology optimization method (TOM), based on genetic algorithms (GAs) and the finite element method (FEM), is proposed to design two-dimensional (2D) solid PnC structures composed of two contrasting elastic materials. The PnCs have the lowest order band gap that is the third band gap for the coupled mode, the first band gap for the shear mode or the XY 34 Z band gap for the mixed mode. Moreover, the effects of the ratios of contrasting material properties on the optimal layout of unit cells and the corresponding phononic band gaps (PBGs) are investigated. The results indicate that the topology of the optimal PnCs and corresponding band gaps varies with the change of material contrasts. The law can be used for the rapid design of desired PnC structures.

Combined spectrophotometry and tensile measurements of human connective tissues: potentials and limitations.

PubMed

Ernstberger, Markus; Sichting, Freddy; Baselt, Tobias; Hartmann, Peter; Aust, Gabriela; Hammer, Niels

2013-06-01

Strain-dependent transmission data of nine iliotibial tract specimens are determined using a custom-built optical setup with a halogen light source and an industrial norm material testing machine. Polarized light microscopy and hematoxylin-eosin staining indicated that lateral contraction of collagen structures is responsible for total intensity variations during a 20-cycle preconditioning and a 5-cycle tensile test. Tensile force progress is opposite to total transmission progress. Due to dehydration, wavelength-specific radiation intensity shifting is determined during the test, primarily noticeable in a water absorption band between 1400 and 1500 nm. The results show the capability of integrating spectrophotometry technology into biomechanics for determining structural alterations of human collagen due to applied strain. Being more sensitive to drying, spectrophotometry may likely serve as a quality control in stress-strain testing of biological structures.

Visible/near-infrared spectral diversity from in situ observations of the Bagnold Dune Field sands in Gale Crater, Mars

NASA Astrophysics Data System (ADS)

Johnson, Jeffrey R.; Achilles, Cherie; Bell, James F.; Bender, Steve; Cloutis, Edward; Ehlmann, Bethany; Fraeman, Abigail; Gasnault, Olivier; Hamilton, Victoria E.; Le Mouélic, Stéphane; Maurice, Sylvestre; Pinet, Patrick; Thompson, Lucy; Wellington, Danika; Wiens, Roger C.

2017-12-01

As part of the Bagnold Dune campaign conducted by Mars Science Laboratory rover Curiosity, visible/near-infrared reflectance spectra of dune sands were acquired using Mast Camera (Mastcam) multispectral imaging (445-1013 nm) and Chemistry and Camera (ChemCam) passive point spectroscopy (400-840 nm). By comparing spectra from pristine and rover-disturbed ripple crests and troughs within the dune field, and through analysis of sieved grain size fractions, constraints on mineral segregation from grain sorting could be determined. In general, the dune areas exhibited low relative reflectance, a weak 530 nm absorption band, an absorption band near 620 nm, and a spectral downturn after 685 nm consistent with olivine-bearing sands. The finest grain size fractions occurred within ripple troughs and in the subsurface and typically exhibited the strongest 530 nm bands, highest relative reflectances, and weakest red/near-infrared ratios, consistent with a combination of crystalline and amorphous ferric materials. Coarser-grained samples were the darkest and bluest and exhibited weaker 530 nm bands, lower relative reflectances, and stronger downturns in the near-infrared, consistent with greater proportions of mafic minerals such as olivine and pyroxene. These grains were typically segregated along ripple crests and among the upper surfaces of grain flows in disturbed sands. Sieved dune sands exhibited progressive decreases in reflectance with increasing grain size, as observed in laboratory spectra of olivine size separates. The continuum of spectral features observed between the coarse- and fine-grained dune sands suggests that mafic grains, ferric materials, and air fall dust mix in variable proportions depending on aeolian activity and grain sorting.

Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides

PubMed Central

Rhyee, Jong-Soo; Kim, Jin Hee

2015-01-01

Researchers have long been searching for the materials to enhance thermoelectric performance in terms of nano scale approach in order to realize phonon-glass-electron-crystal and quantum confinement effects. Peierls distortion can be a pathway to enhance thermoelectric figure-of-merit ZT by employing natural nano-wire-like electronic and thermal transport. The phonon-softening known as Kohn anomaly, and Peierls lattice distortion decrease phonon energy and increase phonon scattering, respectively, and, as a result, they lower thermal conductivity. The quasi-one-dimensional electrical transport from anisotropic band structure ensures high Seebeck coefficient in Indium Selenide. The routes for high ZT materials development of In4Se3−δ are discussed from quasi-one-dimensional property and electronic band structure calculation to materials synthesis, crystal growth, and their thermoelectric properties investigations. The thermoelectric properties of In4Se3−δ can be enhanced by electron doping, as suggested from the Boltzmann transport calculation. Regarding the enhancement of chemical potential, the chlorine doped In4Se3−δCl0.03 compound exhibits high ZT over a wide temperature range and shows state-of-the-art thermoelectric performance of ZT = 1.53 at 450 °C as an n-type material. It was proven that multiple elements doping can enhance chemical potential further. Here, we discuss the recent progress on the enhancement of thermoelectric properties in Indium Selenides by increasing chemical potential. PMID:28788002

Thermoelectric Transport in Nanocomposites

PubMed Central

Liu, Bin; Hu, Jizhu; Zhou, Jun; Yang, Ronggui

2017-01-01

Thermoelectric materials which can convert energies directly between heat and electricity are used for solid state cooling and power generation. There is a big challenge to improve the efficiency of energy conversion which can be characterized by the figure of merit (ZT). In the past two decades, the introduction of nanostructures into bulk materials was believed to possibly enhance ZT. Nanocomposites is one kind of nanostructured material system which includes nanoconstituents in a matrix material or is a mixture of different nanoconstituents. Recently, nanocomposites have been theoretically proposed and experimentally synthesized to be high efficiency thermoelectric materials by reducing the lattice thermal conductivity due to phonon-interface scattering and enhancing the electronic performance due to manipulation of electron scattering and band structures. In this review, we summarize the latest progress in both theoretical and experimental works in the field of nanocomposite thermoelectric materials. In particular, we present various models of both phonon transport and electron transport in various nanocomposites established in the last few years. The phonon-interface scattering, low-energy electrical carrier filtering effect, and miniband formation, etc., in nanocomposites are discussed. PMID:28772777

Thermoelectric Transport in Nanocomposites.

PubMed

Liu, Bin; Hu, Jizhu; Zhou, Jun; Yang, Ronggui

2017-04-15

Thermoelectric materials which can convert energies directly between heat and electricity are used for solid state cooling and power generation. There is a big challenge to improve the efficiency of energy conversion which can be characterized by the figure of merit ( ZT ). In the past two decades, the introduction of nanostructures into bulk materials was believed to possibly enhance ZT . Nanocomposites is one kind of nanostructured material system which includes nanoconstituents in a matrix material or is a mixture of different nanoconstituents. Recently, nanocomposites have been theoretically proposed and experimentally synthesized to be high efficiency thermoelectric materials by reducing the lattice thermal conductivity due to phonon-interface scattering and enhancing the electronic performance due to manipulation of electron scattering and band structures. In this review, we summarize the latest progress in both theoretical and experimental works in the field of nanocomposite thermoelectric materials. In particular, we present various models of both phonon transport and electron transport in various nanocomposites established in the last few years. The phonon-interface scattering, low-energy electrical carrier filtering effect, and miniband formation, etc., in nanocomposites are discussed.

Physics of higher orbital bands in optical lattices: a review.

PubMed

Li, Xiaopeng; Liu, W Vincent

2016-11-01

The orbital degree of freedom plays a fundamental role in understanding the unconventional properties in solid state materials. Experimental progress in quantum atomic gases has demonstrated that high orbitals in optical lattices can be used to construct quantum emulators of exotic models beyond natural crystals, where novel many-body states such as complex Bose-Einstein condensates and topological semimetals emerge. A brief introduction of orbital degrees of freedom in optical lattices is given and a summary of exotic orbital models and resulting many-body phases is provided. Experimental consequences of the novel phases are also discussed.

Terahertz detectors and focal plane arrays

NASA Astrophysics Data System (ADS)

Rogalski, A.; Sizov, F.

2011-09-01

Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands. In the paper, issues associated with the development and exploitation of THz radiation detectors and focal plane arrays are discussed. Historical impressive progress in THz detector sensitivity in a period of more than half century is analyzed. More attention is put on the basic physical phenomena and the recent progress in both direct and heterodyne detectors. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Also, the operational conditions of THz detectors and their upper performance limits are reviewed. Finally, recent advances in novel nanoelectronic materials and technologies are described. It is expected that applications of nanoscale materials and devices will open the door for further performance improvement in THz detectors.

Polycyclic Aromatic Hydrocarbons

NASA Technical Reports Server (NTRS)

Salama, Farid

2010-01-01

Carbonaceous materials play an important role in space. Polycyclic Aromatic Hydrocarbons (PAHs) are a ubiquitous component of the carbonaceous materials. PAHs are the best-known candidates to account for the IR emission bands. They are also thought to be among the carriers of the diffuse interstellar absorption bands (DIBs). PAH ionization states reflect the ionization balance of the medium while PAH size, composition, and structure reflect the energetic and chemical history of the medium. A major challenge is to reproduce in the laboratory the physical conditions that exist in the emission and absorption interstellar zones. The harsh physical conditions of the ISM -low temperature, collisionless, strong UV radiation fields- are simulated in the laboratory by associating a molecular beam with an ionizing discharge to generate a cold plasma expansion. PAH ions and radicals are formed from the neutral precursors in an isolated environment at low temperature and probed with high-sensitivity cavity ringdown spectroscopy in the NUV-NIR range. Carbon nanoparticles are also formed during the short residence time of the precursors in the plasma and are characterized with time-offlight mass spectrometry. These experiments provide unique information on the spectra of large carbonaceous molecules and ions in the gas phase that can now be directly compared to interstellar and circumstellar observations (IR emission bands, DIBs, extinction curve). These findings also hold great potential for understanding the formation process of interstellar carbonaceous grains. We will review recent progress in the experimental and theoretical studies of PAHs, compare the laboratory data with astronomical observations and discuss the global implications.

Asymmetric Semiconductor Nanorod/Oxide Nanoparticle Hybrid Materials: Model Nanomaterials for Light-Activated Formation of Fuels from Sunlight. Formal Progress Report -- Award DE-FG02-05ER15753

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armstrong, Neal R.

Executive Summary on Project Accomplishments: We focused our efforts for this project on the synthesis and characterization of semiconductor nanomaterials composed of semiconductor nanorods (NRs - e.g., CdSe, CdSe@CdS, CdS) with metal (Au, Pt, Co) or metal oxide (CoxOy) nanoparticle (NP) “tips.” These systems are attractive model systems where control of spatial, energetic and compositional features of both NRs and NP tips potentially enhances the efficiency of photogeneration and directional transport of charges, and photoelectrochemical conversion of sunlight to fuels. Synthetic methods to control material dimensions (20-200 nm in length), topology (one vs. two NP tips) and NR/NP tip compositionsmore » have been developed in the current project period (Pyun). We also achieved, for the first time in heterostructured nanorod materials, estimates of both valence band energies (E VB) and conduction band energies (E CB), using unique combinations of in vacuuo ultraviolet photoelectron spectroscopy (UPS, Armstrong), and waveguide spectroelectrochemistry (Saavedra), respectively. The spectroelectrochemical measurements in particular provide a unique path to estimation of E CB, and the distribution in E CB brought about by modification of NR composition. The combination of both approaches promises to be universally applicable to the characterization of energetics in nanomaterials of interest both for photovoltaic and sunlight-to-fuel photoelectrochemical assemblies.« less

A Case Study Of Organic Dirac Materials -

NASA Astrophysics Data System (ADS)

Commeau, Benjamin; Geilhufe, Matthias; Fernando, Gayanath; Balatsky, Alexander

Dirac Materials are characterized by linear band crossings within the electronic band structure. Most research of Dirac materials has been dedicated towards inorganic materials, e.g., binary chalcogenides as toplogical insulators, the Weyl semimetal TaAs or graphene. The purpose of this study is to investigate the formation of Dirac points in organic materials under pressure and mechanical strain. We study multiple structural phases of the organic charge-transfer salt (BEDT-TTF)2I3. We numerically calculate the relaxed band structure near the Fermi level along different k-space directions. Once the relaxed ion structure is obtained, we pick different cell parameters to shrink and investigate the changes in the band structure. We discuss band structure degeneracies protected by crystalline and other symmetries, if any. Quantum Espresso and VASP codes were used to calculate and validate our results.

The Volpe Center GPS Adjacent Band Compatibility Program Plan : GPS Adjacent Band Compatibility Workshop, Volpe Center, Cambridge MA

DOT National Transportation Integrated Search

2014-09-18

Approach to DOT GPS Adjacent Band Compatibility Assessment. Identify forums and provide public outreach to make sure the progress and work are as open and transparent as possible. Develop an implementation plan that incorporates aspects from the DOT ...

Ultrastructure of myocardial widened Z bands and endocardial cells in two teleostean species.

PubMed

Leknes, I L

1981-01-01

Widened myocardial Z bands and endocardial cells are described in two teleostean species Cichlasoma meeki and Corydoras aeneus. Widened Z bands containing mainly amorphous and electron-dense material were seen in a number of myocardial cells. Further, similar material may occur in large amounts beneath the sarcolemma and at intercellular junctions. Occasionally, we observed continuity between the latter material and that in expanded Z bands. In C. meeki the ventricular endocardial layer consists of two structurally different cell types, whereas in C. aeneus only one cell type was seen. The functional aspects of widened Z bands are discussed.

Band Gap Engineering of Titania Systems Purposed for Photocatalytic Activity

NASA Astrophysics Data System (ADS)

Thurston, Cameron

Ab initio computer aided design drastically increases candidate population for highly specified material discovery and selection. These simulations, carried out through a first-principles computational approach, accurately extrapolate material properties and behavior. Titanium Dioxide (TiO2 ) is one such material that stands to gain a great deal from the use of these simulations. In its anatase form, titania (TiO2 ) has been found to exhibit a band gap nearing 3.2 eV. If titania is to become a viable alternative to other contemporary photoactive materials exhibiting band gaps better suited for the solar spectrum, then the band gap must be subsequently reduced. To lower the energy needed for electronic excitation, both transition metals and non-metals have been extensively researched and are currently viable candidates for the continued reduction of titania's band gap. The introduction of multicomponent atomic doping introduces new energy bands which tend to both reduce the band gap and recombination loss. Ta-N, Nb-N, V-N, Cr-N, Mo-N, and W-N substitutions were studied in titania and subsequent energy and band gap calculations show a favorable band gap reduction in the case of passivated systems.

Dorsal arachnoid web.

PubMed

McCormick, Paul C

2014-09-01

Dorsal thoracic arachnoid web is a rare but often overlooked cause of progressive myelopathy. Syringomyelia, either above or below the compressive arachnoid band, may also be present. Dorsal arachnoid cyst and ventral spinal cord herniation may be mistaken for this condition. This video demonstrates the microsurgical identification and techniques of resection of a dorsal arachnoid band producing a progressive myelopathy in a 63-year-old man. The video can be found here: http://youtu.be/KDNTqiyW6yo.

Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

NASA Astrophysics Data System (ADS)

Dey, Anup; Maiti, Biswajit; Chanda Sarkar, Debasree

2014-04-01

A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k→) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg1-xCdxTe, and In1-xGaxAsyP1-y lattice matched to InP, as example of III-V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

Ultrawide low frequency band gap of phononic crystal in nacreous composite material

NASA Astrophysics Data System (ADS)

Yin, J.; Huang, J.; Zhang, S.; Zhang, H. W.; Chen, B. S.

2014-06-01

The band structure of a nacreous composite material is studied by two proposed models, where an ultrawide low frequency band gap is observed. The first model (tension-shear chain model) with two phases including brick and mortar is investigated to describe the wave propagation in the nacreous composite material, and the dispersion relation is calculated by transfer matrix method and Bloch theorem. The results show that the frequency ranges of the pass bands are quite narrow, because a special tension-shear chain motion in the nacreous composite material is formed by some very slow modes. Furthermore, the second model (two-dimensional finite element model) is presented to investigate its band gap by a multi-level substructure scheme. Our findings will be of great value to the design and synthesis of vibration isolation materials in a wide and low frequency range. Finally, the transmission characteristics are calculated to verify the results.

Health Risks Faced by Public School Band Directors

ERIC Educational Resources Information Center

Woolery, Danielle N.; Woolery, Jesse A.

2013-01-01

Public school band directors face many work-related hazards in their grueling, yet rewarding job. As a school year progresses, directors are expected to work long hours, while trying to balance professional and personal responsibilities. A band director whose career spans multiple decades can potentially face a number of serious medical problems.…

Subcutaneous botryomycosis due to Bibersteinia trehalosi in a Texas Longhorn steer.

PubMed

Spagnoli, S; Reilly, T J; Calcutt, M J; Fales, W H; Kim, D Y

2012-09-01

A 3-year-old Texas Longhorn steer had a long history of progressive swelling of the soft tissues of the jaw and neck. At necropsy, multifocal to coalescing dermal and subcutaneous pyogranulomas were surrounded by fibrous tissue. Microscopically, the pyogranulomas contained aggregates of gram-negative coccobacilli surrounded by Splendore-Hoeppli material and were separated by bands of fibrovascular tissue (botryomycosis). Phylogenetic analysis of multilocus sequence-typing data revealed that the bacteria recovered in pure culture from swabs of submandibular tissue were most closely related to Bibersteinia [Pasteurella] trehalosi. The bacterial colonies were immunohistochemically reactive with a rabbit polyclonal anti-Pasteurella class C acid phosphatase antibody. Botryomycosis is a pyogranulomatous inflammation caused by a variety of nonbranching, nonfilamentous bacteria that elicit the formation of Splendore-Hoeppli material. This case of botryomycosis is unique for its association with Bibersteinia trehalosi.

8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gladysiewicz, M.; Wartak, M. S.; Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5

The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be usedmore » to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.« less

Quasiparticle band gap of organic-inorganic hybrid perovskites: Crystal structure, spin-orbit coupling, and self-energy effects

NASA Astrophysics Data System (ADS)

Gao, Weiwei; Gao, Xiang; Abtew, Tesfaye A.; Sun, Yi-Yang; Zhang, Shengbai; Zhang, Peihong

2016-02-01

The quasiparticle band gap is one of the most important materials properties for photovoltaic applications. Often the band gap of a photovoltaic material is determined (and can be controlled) by various factors, complicating predictive materials optimization. An in-depth understanding of how these factors affect the size of the gap will provide valuable guidance for new materials discovery. Here we report a comprehensive investigation on the band gap formation mechanism in organic-inorganic hybrid perovskites by decoupling various contributing factors which ultimately determine their electronic structure and quasiparticle band gap. Major factors, namely, quasiparticle self-energy, spin-orbit coupling, and structural distortions due to the presence of organic molecules, and their influences on the quasiparticle band structure of organic-inorganic hybrid perovskites are illustrated. We find that although methylammonium cations do not contribute directly to the electronic states near band edges, they play an important role in defining the band gap by introducing structural distortions and controlling the overall lattice constants. The spin-orbit coupling effects drastically reduce the electron and hole effective masses in these systems, which is beneficial for high carrier mobilities and small exciton binding energies.

Beta-galactosidase deficiency in a Korat cat: a new form of feline GM1-gangliosidosis.

PubMed

De Maria, R; Divari, S; Bo, S; Sonnio, S; Lotti, D; Capucchio, M T; Castagnaro, M

1998-09-01

A 7-month-old Korat cat was referred for a slowly progressive neurological disease. Circulating monocytes and lymphocytes showed the presence of single or multiple empty vacuoles and blood leukocytes enzyme assay revealed a very low beta-galactosidase activity level (4.7 nmol/mg per h) as compared to unaffected parents and relatives. Histologically, the cat, euthanized at the owner request at 21 months of age, presented diffuse vacuolization and enlargement of neurons throughout the brain, spinal cord and peripheral ganglia, severe cerebellar neuronal cell loss, and moderate astrocytosis. Stored material was stained with periodic acid-Schiff on frozen sections and with the lectins Ricinus conmmunis agglutinin-I, concanavalin A and wheat germ agglutinin on paraffin-embedded sections. Ultrastructurally, neuronal vacuoles were filled with concentrically whorled lamellae and small membrane-bound vesicles. In the affected cat, beta-galactosidase activity was markedly reduced in brain (18.9%) and liver (33.25%), while total beta-hexosaminidase activity showed a remarkable increase. Quantitation of total gangliosides revealed a 3-fold increase in brain and 1.7-fold in liver of affected cat. High-performance thin layer chromatography (HPTLC) detected a striking increase of GM1-ganglioside. On densitometric analysis of HPTLC bands, the absorption of GM1-ganglioside band was 98.52% of all stained bands (GD1a, GD1b, GT1b). Based on clinical onset, morphological and histochemical features, and biochemical findings, the Korat cat GM1-gangliosidosis is comparable with the human type II (juvenile) form. However, clinical progression, survival time and level of beta-galactosidase deficiency do not completely fit with those of human type II GM1-gangliosidosis. The disease in the Korat cat is also different from other reported forms of feline GM1-gangliosidosis.

Photonic band structures in one-dimensional photonic crystals containing Dirac materials

NASA Astrophysics Data System (ADS)

Wang, Lin; Wang, Li-Gang

2015-09-01

We have investigated the band structures of one-dimensional photonic crystals (1DPCs) composed of Dirac materials and ordinary dielectric media. It is found that there exist an omnidirectional passing band and a kind of special band, which result from the interaction of the evanescent and propagating waves. Due to the interface effect and strong dispersion, the electromagnetic fields inside the special bands are strongly enhanced. It is also shown that the properties of these bands are invariant upon the lattice constant but sensitive to the resonant conditions.

Evaluation of oxidation behavior of γ-irradiated EPDM/PP compounds

NASA Astrophysics Data System (ADS)

Zaharescu, T.; Jipa, S.; Setnescu, R.; Setnescu, T.

2007-12-01

The oxidation effect of irradiation on ethylene-propylene diene terpolymer/polypropylene blends is presented. The polymer samples consisting of both materials under various ratios (20:80, 40:60, 60:40 and 80:20) were exposed to γ-irradiation ( 137Cs). The irradiation effects were assessed by two methods: oxygen uptake and IR spectroscopy (1720 cm -1 and 3350 cm -1, the characteristic bands for carbonyl and hydroxyl groups, respectively). The carbonyl and hydroxyl indexes were calculated for all formulations. From oxygen uptake investigation the kinetic parameters for thermal oxidation of irradiated samples were calculated. The contribution of each component to the progress of degradation is discussed.

Barrier infrared detector research at the Jet Propulsion Laboratory

NASA Astrophysics Data System (ADS)

Ting, David Z.; Keo, Sam A.; Liu, John K.; Mumolo, Jason M.; Khoshakhlagh, Arezou; Soibel, Alexander; Nguyen, Jean; Höglund, Linda; Rafol, B., , Sir; Hill, Cory J.; Gunapala, Sarath D.

2012-10-01

The barrier infrared detector device architecture offers the advantage of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination and surface leakage. The versatility of the antimonide material system, with the availability of three different types of band offsets for flexibility in device design, provides the ideal setting for implementing barrier infrared detectors. We describe the progress made at the NASA Jet Propulsion Laboratory in recent years in Barrier infrared detector research that resulted in high-performance quantum structure infrared detectors, including the type-II superlattice complementary barrier infrared detector (CBIRD), and the high operating quantum dot barrier infrared detector (HOT QD-BIRD).

Spectral Band Selection for Urban Material Classification Using Hyperspectral Libraries

NASA Astrophysics Data System (ADS)

Le Bris, A.; Chehata, N.; Briottet, X.; Paparoditis, N.

2016-06-01

In urban areas, information concerning very high resolution land cover and especially material maps are necessary for several city modelling or monitoring applications. That is to say, knowledge concerning the roofing materials or the different kinds of ground areas is required. Airborne remote sensing techniques appear to be convenient for providing such information at a large scale. However, results obtained using most traditional processing methods based on usual red-green-blue-near infrared multispectral images remain limited for such applications. A possible way to improve classification results is to enhance the imagery spectral resolution using superspectral or hyperspectral sensors. In this study, it is intended to design a superspectral sensor dedicated to urban materials classification and this work particularly focused on the selection of the optimal spectral band subsets for such sensor. First, reflectance spectral signatures of urban materials were collected from 7 spectral libraires. Then, spectral optimization was performed using this data set. The band selection workflow included two steps, optimising first the number of spectral bands using an incremental method and then examining several possible optimised band subsets using a stochastic algorithm. The same wrapper relevance criterion relying on a confidence measure of Random Forests classifier was used at both steps. To cope with the limited number of available spectra for several classes, additional synthetic spectra were generated from the collection of reference spectra: intra-class variability was simulated by multiplying reference spectra by a random coefficient. At the end, selected band subsets were evaluated considering the classification quality reached using a rbf svm classifier. It was confirmed that a limited band subset was sufficient to classify common urban materials. The important contribution of bands from the Short Wave Infra-Red (SWIR) spectral domain (1000-2400 nm) to material classification was also shown.

Programmable optical processor chips: toward photonic RF filters with DSP-level flexibility and MHz-band selectivity

NASA Astrophysics Data System (ADS)

Xie, Yiwei; Geng, Zihan; Zhuang, Leimeng; Burla, Maurizio; Taddei, Caterina; Hoekman, Marcel; Leinse, Arne; Roeloffzen, Chris G. H.; Boller, Klaus-J.; Lowery, Arthur J.

2017-12-01

Integrated optical signal processors have been identified as a powerful engine for optical processing of microwave signals. They enable wideband and stable signal processing operations on miniaturized chips with ultimate control precision. As a promising application, such processors enables photonic implementations of reconfigurable radio frequency (RF) filters with wide design flexibility, large bandwidth, and high-frequency selectivity. This is a key technology for photonic-assisted RF front ends that opens a path to overcoming the bandwidth limitation of current digital electronics. Here, the recent progress of integrated optical signal processors for implementing such RF filters is reviewed. We highlight the use of a low-loss, high-index-contrast stoichiometric silicon nitride waveguide which promises to serve as a practical material platform for realizing high-performance optical signal processors and points toward photonic RF filters with digital signal processing (DSP)-level flexibility, hundreds-GHz bandwidth, MHz-band frequency selectivity, and full system integration on a chip scale.

Musical Collaboration outside School: Processes of Negotiation in Band Rehearsals

ERIC Educational Resources Information Center

Miell, Dorothy; Littleton, Karen

2008-01-01

This paper presents a study of a series of band rehearsals run by five young people as they practised for a gig together: preparing new songs as well as developing their existing sets. The analysis specifically explores the ways in which the band members collectively develop and evaluate their musical "works in progress." Their interactions were…

Effects of initial condition spectral content on shock-driven turbulent mixing.

PubMed

Nelson, Nicholas J; Grinstein, Fernando F

2015-07-01

The mixing of materials due to the Richtmyer-Meshkov instability and the ensuing turbulent behavior is of intense interest in a variety of physical systems including inertial confinement fusion, combustion, and the final stages of stellar evolution. Extensive numerical and laboratory studies of shock-driven mixing have demonstrated the rich behavior associated with the onset of turbulence due to the shocks. Here we report on progress in understanding shock-driven mixing at interfaces between fluids of differing densities through three-dimensional (3D) numerical simulations using the rage code in the implicit large eddy simulation context. We consider a shock-tube configuration with a band of high density gas (SF(6)) embedded in low density gas (air). Shocks with a Mach number of 1.26 are passed through SF(6) bands, resulting in transition to turbulence driven by the Richtmyer-Meshkov instability. The system is followed as a rarefaction wave and a reflected secondary shock from the back wall pass through the SF(6) band. We apply a variety of initial perturbations to the interfaces between the two fluids in which the physical standard deviation, wave number range, and the spectral slope of the perturbations are held constant, but the number of modes initially present is varied. By thus decreasing the density of initial spectral modes of the interface, we find that we can achieve as much as 25% less total mixing at late times. This has potential direct implications for the treatment of initial conditions applied to material interfaces in both 3D and reduced dimensionality simulation models.

Effects of Initial Condition Spectral Content on Shock Driven-Turbulent Mixing

DOE PAGES

Nelson, Nicholas James; Grinstein, Fernando F.

2015-07-15

The mixing of materials due to the Richtmyer-Meshkov instability and the ensuing turbulent behavior is of intense interest in a variety of physical systems including inertial confinement fusion, combustion, and the final stages of stellar evolution. Extensive numerical and laboratory studies of shock-driven mixing have demonstrated the rich behavior associated with the onset of turbulence due to the shocks. Here we report on progress in understanding shock-driven mixing at interfaces between fluids of differing densities through three-dimensional (3D) numerical simulations using the RAGE code in the implicit large eddy simulation context. We consider a shock-tube configuration with a band ofmore » high density gas (SF 6) embedded in low density gas (air). Shocks with a Mach number of 1.26 are passed through SF 6 bands, resulting in transition to turbulence driven by the Richtmyer-Meshkov instability. The system is followed as a rarefaction wave and a reflected secondary shock from the back wall pass through the SF 6 band. We apply a variety of initial perturbations to the interfaces between the two fluids in which the physical standard deviation, wave number range, and the spectral slope of the perturbations are held constant, but the number of modes initially present is varied. By thus decreasing the density of initial spectral modes of the interface, we find that we can achieve as much as 25% less total mixing at late times. This has potential direct implications for the treatment of initial conditions applied to material interfaces in both 3D and reduced dimensionality simulation models.« less

Improved Photoactivity of Pyroxene Silicates by Cation Substitutions.

PubMed

Legesse, Merid; Park, Heesoo; El Mellouhi, Fedwa; Rashkeev, Sergey N; Kais, Sabre; Alharbi, Fahhad H

2018-04-17

We investigated the possibility of band structure engineering of pyroxene silicates with chemical formula A +1 B +3 Si 2 O 6 by proper cation substitution. Typically, band gaps of naturally formed pyroxene silicates such as NaAlSi 2 O 6 are quite high (≈5 eV). Therefore, it is important to find a way to reduce band gaps for these materials below 3 eV to make them usable for optoelectronic applications operating at visible light range of the spectrum. Using first-principles calculations, we found that appropriate substitutions of both A + and B 3+ cations can reduce the band gaps of these materials to as low as 1.31 eV. We also discuss how the band gap in this class of materials is affected by cation radii, electronegativity of constituent elements, spin-orbit coupling, and structural modifications. In particular, the replacement of Al 3+ in NaAlSi 2 O 6 by another trivalent cation Tl 3+ results in the largest band-gap reduction and emergence of intermediate bands. We also found that all considered materials are still thermodynamically stable. This work provides a design approach for new environmentally benign and abundant materials for use in photovoltaics and optoelectronic devices. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

W-Band Transmission MeasurementS and X-Band Dielectric Properties Measurements for a Radome Material Sample

NASA Technical Reports Server (NTRS)

Cravey, Robin L.; Tiemsin, Pacita I.

1997-01-01

This paper describes measurements which were performed on a sample of radome material in the Electromagnetic Properties Measurements Laboratory (EPML). The purpose of the measurements described in this paper was to determine the one-way transmission loss through the flat panel of radome material for a frequency range of 84 to 94 GHz, for varying incidence angles. The panel, which was manufactured by Norton Performance Plastics Corporation, was provided to the EPML by TRW. The size of the panel is 40 in x 36 in x 0.422 in and consists of a foam material with one side coated with a smooth white coating (this side will be referred to as the front side). The dielectric properties of the foam material from the inside of the panel were also determined at X-band (8.2-12.4 GHz). The W-band free space measurements are presented first, followed by the X-band dielectric properties measurements.

Optical and Excitonic Properties of Atomically Thin Transition-Metal Dichalcogenides

NASA Astrophysics Data System (ADS)

Berkelbach, Timothy C.; Reichman, David R.

2018-03-01

Starting with the isolation of a single sheet of graphene, the study of layered materials has been one of the most active areas of condensed matter physics, chemistry, and materials science. Single-layer transition-metal dichalcogenides are direct-gap semiconducting analogs of graphene that exhibit novel electronic and optical properties. These features provide exciting opportunities for the discovery of both new fundamental physical phenomena as well as innovative device platforms. Here, we review the progress associated with the creation and use of a simple microscopic framework for describing the optical and excitonic behavior of few-layer transition-metal dichalcogenides, which is based on symmetry, band structure, and the effective interactions between charge carriers in these materials. This approach provides an often quantitative account of experiments that probe the physics associated with strong electron–hole interactions in these quasi two-dimensional systems and has been successfully employed by many groups to both describe and predict emergent excitonic behavior in these layered semiconducting systems.

High Performance Oxides-Based Thermoelectric Materials

NASA Astrophysics Data System (ADS)

Ren, Guangkun; Lan, Jinle; Zeng, Chengcheng; Liu, Yaochun; Zhan, Bin; Butt, Sajid; Lin, Yuan-Hua; Nan, Ce-Wen

2015-01-01

Thermoelectric materials have attracted much attention due to their applications in waste-heat recovery, power generation, and solid state cooling. In comparison with thermoelectric alloys, oxide semiconductors, which are thermally and chemically stable in air at high temperature, are regarded as the candidates for high-temperature thermoelectric applications. However, their figure-of-merit ZT value has remained low, around 0.1-0.4 for more than 20 years. The poor performance in oxides is ascribed to the low electrical conductivity and high thermal conductivity. Since the electrical transport properties in these thermoelectric oxides are strongly correlated, it is difficult to improve both the thermoelectric power and electrical conductivity simultaneously by conventional methods. This review summarizes recent progresses on high-performance oxide-based thermoelectric bulk-materials including n-type ZnO, SrTiO3, and In2O3, and p-type Ca3Co4O9, BiCuSeO, and NiO, enhanced by heavy-element doping, band engineering and nanostructuring.

Night sleep electroencephalogram power spectral analysis in excessive daytime sleepiness disorders.

PubMed

Reimão, R

1991-06-01

A group of 53 patients (40 males, 13 females) with mean age of 49 years, ranging from 30 to 70 years, was evaluated in the following excessive daytime sleepiness (EDS) disorders: obstructive sleep apnea syndrome (B4a), periodic movements in sleep (B5a), affective disorder (B2a), functional psychiatric non affective disorder (B2b). We considered all adult patients referred to the Center sequentially with no other distinctions but these three criteria: (a) EDS was the main complaint; (b) right handed; (c) not using psychotropic drugs for two weeks prior to the all-night polysomnography. EEG (C3/A1, C4/A2) samples from 2 to 10 minutes of each stage of the first REM cycle were chosen. The data was recorded simultaneously in magnetic tape and then fed into a computer for power spectral analysis. The percentage of power (PP) in each band calculated in relation to the total EEG power was determined of subsequent sections of 20.4 s for the following frequency bands: delta, theta, alpha and beta. The PP in all EDS patients sample had a tendency to decrease progressively from the slowest to the fastest frequency bands, in every sleep stage. PP distribution in the delta range increased progressively from stage 1 to stage 4; stage REM levels were close to stage 2 levels. In an EDS patients interhemispheric coherence was high in every band and sleep stage. B4a patients sample PP had a tendency to decrease progressively from the slowest to the fastest frequency bands, in every sleep stage; PP distribution in the delta range increased progressively from stage 1 to stage 4; stage REM levels were between stage 1 and stage 2 levels.(ABSTRACT TRUNCATED AT 250 WORDS)

On the tuning of electrical and thermal transport in thermoelectrics: an integrated theory–experiment perspective

DOE PAGES

Yang, Jiong; Xi, Lili; Qiu, Wujie; ...

2016-02-26

During the last two decades, we have witnessed great progress in research on thermoelectrics. There are two primary focuses. One is the fundamental understanding of electrical and thermal transport, enabled by the interplay of theory and experiment; the other is the substantial enhancement of the performance of various thermoelectric materials, through synergistic optimisation of those intercorrelated transport parameters. In this article, we review some of the successful strategies for tuning electrical and thermal transport. For electrical transport, we start from the classical but still very active strategy of tuning band degeneracy (or band convergence), then discuss the engineering of carriermore » scattering, and finally address the concept of conduction channels and conductive networks that emerge in complex thermoelectric materials. For thermal transport, we summarise the approaches for studying thermal transport based on phonon–phonon interactions valid for conventional solids, as well as some quantitative efforts for nanostructures. We also discuss the thermal transport in complex materials with chemical-bond hierarchy, in which a portion of the atoms (or subunits) are weakly bonded to the rest of the structure, leading to an intrinsic manifestation of part-crystalline part-liquid state at elevated temperatures. In this review, we provide a summary of achievements made in recent studies of thermoelectric transport properties, and demonstrate how they have led to improvements in thermoelectric performance by the integration of modern theory and experiment, and point out some challenges and possible directions.« less

Multi-band filter design with less total film thickness for short-wave infrared

NASA Astrophysics Data System (ADS)

Yan, Yung-Jhe; Chien, I.-Pen; Chen, Po-Han; Chen, Sheng-Hui; Tsai, Yi-Chun; Ou-Yang, Mang

2017-08-01

A multi-band pass filter array was proposed and designed for short wave infrared applications. The central wavelength of the multi-band pass filters are located about 905 nm, 950 nm, 1055 nm and 1550 nm. In the simulation of an optical interference band pass filter, high spectrum performance (high transmittance ratio between the pass band and stop band) relies on (1) the index gap between the selected high/low-index film materials, with a larger gap correlated to higher performance, and (2) sufficient repeated periods of high/low-index thin-film layers. When determining high and low refractive index materials, spectrum performance was improved by increasing repeated periods. Consequently, the total film thickness increases rapidly. In some cases, a thick total film thickness is difficult to process in practice, especially when incorporating photolithography liftoff. Actually the maximal thickness of the photoresist being able to liftoff will bound the total film thickness of the band pass filter. For the application of the short wave infrared with the wavelength range from 900nm to 1700nm, silicone was chosen as a high refractive index material. Different from other dielectric materials used in the visible range, silicone has a higher absorptance in the visible range opposite to higher transmission in the short wave infrared. In other words, designing band pass filters based on silicone as a high refractive index material film could not obtain a better spectrum performance than conventional high index materials like TiO2 or Ta2O5, but also its material cost would reduce about half compared to the total film thickness with the conventional material TiO2. Through the simulation and several experimental trials, the total film thickness below 4 um was practicable and reasonable. The fabrication of the filters was employed a dual electric gun deposition system with ion assisted deposition after the lithography process. Repeating four times of lithography and deposition process and black matrix coating, the optical device processes were completed.

Development of zirconia based phosphors for application in lighting and as luminescent bioprobes =

NASA Astrophysics Data System (ADS)

Soares, Maria Rosa Nunes

The strong progress evidenced in photonic and optoelectronic areas, accompanied by an exponential development in the nanoscience and nanotechnology, gave rise to an increasing demand for efficient luminescent materials with more and more exigent characteristics. In this field, wide band gap hosts doped with lanthanide ions represent a class of luminescent materials with a strong technological importance. Within wide band gap material, zirconia owns a combination of physical and chemical properties that potentiate it as an excellent host for the aforementioned ions, envisaging its use in different areas, including in lighting and optical sensors applications, such as pressure sensors and biosensors. Following the demand for outstanding luminescent materials, there is also a request for fast, economic and an easy scale-up process for their production. Regarding these demands, laser floating zone, solution combustion synthesis and pulsed laser ablation in liquid techniques are explored in this thesis for the production of single crystals, nanopowders and nanoparticles of lanthanides doped zirconia based hosts. Simultaneously, a detailed study of the morphological, structural and optical properties of the produced materials is made. The luminescent characteristics of zirconia and yttria stabilized zirconia (YSZ) doped with different lanthanide ions (Ce3+ (4f1), Pr3+ (4f2), Sm3+ (4f5), Eu3+ (4f6), Tb3+ (4f8), Dy3+ (4f9), Er3+ (4f11), Tm3+ (4f12), Yb3+ (4f13)) and co-doped with Er3+,Yb3+ and Tm3+,Yb3+ are analysed. Besides the Stokes luminescence, the anti- Stokes emission upon infrared excitation (upconversion and black body radiation) is also analysed and discussed. The comparison of the luminescence characteristics in materials with different dimensions allowed to analyse the effect of size in the luminescent properties of the dopant lanthanide ions. The potentialities of application of the produced luminescent materials in solid state light, biosensors and pressure sensors are explored taking into account their studied characteristics.

Designing broad phononic band gaps for in-plane modes

NASA Astrophysics Data System (ADS)

Li, Yang Fan; Meng, Fei; Li, Shuo; Jia, Baohua; Zhou, Shiwei; Huang, Xiaodong

2018-03-01

Phononic crystals are known as artificial materials that can manipulate the propagation of elastic waves, and one essential feature of phononic crystals is the existence of forbidden frequency range of traveling waves called band gaps. In this paper, we have proposed an easy way to design phononic crystals with large in-plane band gaps. We demonstrated that the gap between two arbitrarily appointed bands of in-plane mode can be formed by employing a certain number of solid or hollow circular rods embedded in a matrix material. Topology optimization has been applied to find the best material distributions within the primitive unit cell with maximal band gap width. Our results reveal that the centroids of optimized rods coincide with the point positions generated by Lloyd's algorithm, which deepens our understandings on the formation mechanism of phononic in-plane band gaps.

Analysis of Glass-Reinforced Epoxy Material for Radio Frequency Resonator

PubMed Central

Islam, M. T.; Misran, N.; Yatim, Baharudin

2014-01-01

A radio frequency (RF) resonator using glass-reinforced epoxy material for C and X band is proposed in this paper. Microstrip line technology for RF over glass-reinforced epoxy material is analyzed. Coupling mechanism over RF material and parasitic coupling performance is explained utilizing even and odd mode impedance with relevant equivalent circuit. Babinet's principle is deployed to explicate the circular slot ground plane of the proposed resonator. The resonator is designed over four materials from different backgrounds which are glass-reinforced epoxy, polyester, gallium arsenide (GaAs), and rogers RO 4350B. Parametric studies and optimization algorithm are applied over the geometry of the microstrip resonator to achieve dual band response for C and X band. Resonator behaviors for different materials are concluded and compared for the same structure. The final design is fabricated over glass-reinforced epoxy material. The fabricated resonator shows a maximum directivity of 5.65 dBi and 6.62 dBi at 5.84 GHz and 8.16 GHz, respectively. The lowest resonance response is less than −20 dB for C band and −34 dB for X band. The resonator is prototyped using LPKF (S63) drilling machine to study the material behavior. PMID:24977230

Inverse Band Structure Design via Materials Database Screening: Application to Square Planar Thermoelectrics

DOE PAGES

Isaacs, Eric B.; Wolverton, Chris

2018-02-26

Electronic band structure contains a wealth of information on the electronic properties of a solid and is routinely computed. However, the more difficult problem of designing a solid with a desired band structure is an outstanding challenge. In order to address this inverse band structure design problem, we devise an approach using materials database screening with materials attributes based on the constituent elements, nominal electron count, crystal structure, and thermodynamics. Our strategy is tested in the context of thermoelectric materials, for which a targeted band structure containing both flat and dispersive components with respect to crystal momentum is highly desirable.more » We screen for thermodynamically stable or metastable compounds containing d 8 transition metals coordinated by anions in a square planar geometry in order to mimic the properties of recently identified oxide thermoelectrics with such a band structure. In doing so, we identify 157 compounds out of a total of over half a million candidates. After further screening based on electronic band gap and structural anisotropy, we explicitly compute the band structures for the several of the candidates in order to validate the approach. We successfully find two new oxide systems that achieve the targeted band structure. Electronic transport calculations on these two compounds, Ba 2PdO 3 and La 4PdO 7, confirm promising thermoelectric power factor behavior for the compounds. This methodology is easily adapted to other targeted band structures and should be widely applicable to a variety of design problems.« less

Inverse Band Structure Design via Materials Database Screening: Application to Square Planar Thermoelectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Isaacs, Eric B.; Wolverton, Chris

Electronic band structure contains a wealth of information on the electronic properties of a solid and is routinely computed. However, the more difficult problem of designing a solid with a desired band structure is an outstanding challenge. In order to address this inverse band structure design problem, we devise an approach using materials database screening with materials attributes based on the constituent elements, nominal electron count, crystal structure, and thermodynamics. Our strategy is tested in the context of thermoelectric materials, for which a targeted band structure containing both flat and dispersive components with respect to crystal momentum is highly desirable.more » We screen for thermodynamically stable or metastable compounds containing d 8 transition metals coordinated by anions in a square planar geometry in order to mimic the properties of recently identified oxide thermoelectrics with such a band structure. In doing so, we identify 157 compounds out of a total of over half a million candidates. After further screening based on electronic band gap and structural anisotropy, we explicitly compute the band structures for the several of the candidates in order to validate the approach. We successfully find two new oxide systems that achieve the targeted band structure. Electronic transport calculations on these two compounds, Ba 2PdO 3 and La 4PdO 7, confirm promising thermoelectric power factor behavior for the compounds. This methodology is easily adapted to other targeted band structures and should be widely applicable to a variety of design problems.« less

Thermal Infrared Spectral Band Detection Limits for Unidentified Surface Materials

NASA Technical Reports Server (NTRS)

Kirkland, Laurel E.; Herr, Kenneth C.; Salisbury, John W.

2001-01-01

Infrared emission spectra recorded by airborne or satellite spectrometers can be searched for spectral features to determine the composition of rocks on planetary surfaces. Surface materials are identified by detections of characteristic spectral bands. We show how to define whether to accept an observed spectral feature as a detection when the target material is unknown. We also use remotely sensed spectra measured by the Thermal Emission Spectrometer (TES) and the Spatially Enhanced Broadband Array Spectrograph System to illustrate the importance of instrument parameters and surface properties on band detection limits and how the variation in signal-to-noise ratio with wavelength affects the bands that are most detectable for a given instrument. The spectrometer's sampling interval, spectral resolution, signal-to-noise ratio as a function of wavelength, and the sample's surface properties influence whether the instrument can detect a spectral feature exhibited by a material. As an example, in the 6-13 micrometer wavelength region, massive carbonates exhibit two bands: a very strong, broad feature at approximately 6.5 micrometers and a less intense, sharper band at approximately 11.25 micrometers. Although the 6.5-micrometer band is stronger and broader in laboratory-measured spectra, the 11.25-micrometer band will cause a more detectable feature in TES spectra.

Associations of HLA DRB1 alleles with IgG oligoclonal bands and their influence on multiple sclerosis course and disability status.

PubMed

Balnytė, Renata; Rastenytė, Daiva; Vaitkus, Antanas; Skrodenienė, Erika; Vitkauskienė, Astra; Ulozienė, Ingrida

2016-01-01

Oligoclonal bands (OCB) may be associated with the genes of HLA complex, which allows to consider the possible interaction of genetic and immunological factors and its importance in the development and progression of multiple sclerosis (MS). The aim of this study was to evaluate the associations between HLA DRB1 alleles and oligoclonal bands (OCBs) in the disease course and disability of multiple sclerosis (MS) patients. This was a prospective study of 120 patients with MS. HLA DRB1 alleles were genotyped using the polymerase chain reaction. Matched cerebrospinal fluid (CSF) and plasma samples were analyzed using isoelectric focusing and IgG specific immunofixation to test for the presence of intrathecal specific OCB. HLA DRB1*08 allele was related to a lower degree of disability. Oligoclonal bands were an independent and significant factor that influenced disability status irrespective of HLA DRB1* 04, *07, *08, *13, *15 and *16 alleles. Age at the onset and duration of the disease were independent and significant factors for MS progression in all logistic regression models with each newly added HLA DRB1 allele. HLA DRB1*08 allele was related to 75% lower odds that relapsing remitting (RR) MS will change to a progressive course MS irrespective of the other factors investigated. Detection of OCBs in the CSF was associated with the higher possibility of RR MS progression in all cases, except when the *08 allele was present. OCBs had an influence on disability status, while HLA DRB1*08 allele was significantly associated with lower possibility that RR MS will change to progressive course MS. Copyright © 2016 The Lithuanian University of Health Sciences. Production and hosting by Elsevier Urban & Partner Sp. z o.o. All rights reserved.

Sb-Based Double Heterojunction Bipolar Transistors (DHBTs) With Fmax 650GHz for 340GHz Transmitter

DTIC Science & Technology

2008-12-01

PROPER IDENTIFICATION . NOT TO BE USED FOR INTERIM PROGRESS REPORTS SEE PAGE 2 FOR INTERIM PROGRESS REPORT INSTRUCTIONS MEMORANDUM OF TRANSMITTAL...conduction band lineup . These advantages have led to rapid progress in increasing device bandwidths, allowing competitive RF performance with established

Second-harmonic generation at angular incidence in a negative-positive index photonic band-gap structure.

PubMed

D'Aguanno, Giuseppe; Mattiucci, Nadia; Scalora, Michael; Bloemer, Mark J

2006-08-01

In the spectral region where the refractive index of the negative index material is approximately zero, at oblique incidence, the linear transmission of a finite structure composed of alternating layers of negative and positive index materials manifests the formation of a new type of band gap with exceptionally narrow band-edge resonances. In particular, for TM-polarized (transverse magnetic) incident waves, field values that can be achieved at the band edge may be much higher compared to field values achievable in standard photonic band-gap structures. We exploit the unique properties of these band-edge resonances for applications to nonlinear frequency conversion, second-harmonic generation, in particular. The simultaneous availability of high field localization and phase matching conditions may be exploited to achieve second-harmonic conversion efficiencies far better than those achievable in conventional photonic band-gap structures. Moreover, we study the role played by absorption within the negative index material, and find that the process remains efficient even for relatively high values of the absorption coefficient.

Perovskite Solar Cells: From the Atomic Level to Film Quality and Device Performance.

PubMed

Saliba, Michael; Correa-Baena, Juan-Pablo; Grätzel, Michael; Hagfeldt, Anders; Abate, Antonio

2018-03-01

Organic-inorganic perovskites have made tremendous progress in recent years due to exceptional material properties such as high panchromatic absorption, charge carrier diffusion lengths, and a sharp optical band edge. The combination of high-quality semiconductor performance with low-cost deposition techniques seems to be a match made in heaven, creating great excitement far beyond academic ivory towers. This is particularly true for perovskite solar cells (PSCs) that have shown unprecedented gains in efficiency and stability over a time span of just five years. Now there are serious efforts for commercialization with the hope that PSCs can make a major impact in generating inexpensive, sustainable solar electricity. In this Review, we will focus on perovskite material properties as well as on devices from the atomic to the thin film level to highlight the remaining challenges and to anticipate the future developments of PSCs. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes

PubMed Central

Lee, Ching-Ting

2010-01-01

Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm−1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.

High-performance black phosphorus top-gate ferroelectric transistor for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Lee, Young Tack; Hwang, Do Kyung; Choi, Won Kook

2016-10-01

Two-dimensional (2D) van der Waals (vdW) atomic crystals have been extensively studied and significant progress has been made. The newest 2D vdW material, called black phosphorus (BP), has attracted considerable attention due to its unique physical properties, such as its being a singlecomponent material like graphene, and its having a high mobility and direct band gap. Here, we report on a high-performance BP nanosheet based ferroelectric field effect transistor (FeFET) with a poly(vinylidenefluoride-trifluoroethylene) top-gate insulator for a nonvolatile memory application. The BP FeFETs show the highest linear hole mobility of 563 cm2/Vs and a clear memory window of more than 15 V. For more advanced nonvolatile memory circuit applications, two different types of resistive-load and complementary ferroelectric memory inverters were implemented, which showed distinct memory on/off switching characteristics.

Development of Si(1-x)Ge(x) technology for microwave sensing applications

NASA Technical Reports Server (NTRS)

Mena, Rafael A.; Taub, Susan R.; Alterovitz, Samuel A.; Young, Paul E.; Simons, Rainee N.; Rosenfeld, David

1993-01-01

The progress for the first year of the work done under the Director's Discretionary Fund (DDF) research project entitled, 'Development of Si(1-x)Ge(x) Technology for Microwave Sensing Applications.' This project includes basic material characterization studies of silicon-germanium (SiGe), device processing on both silicon (Si) and SiGe substrates, and microwave characterization of transmission lines on silicon substrates. The material characterization studies consisted of ellipsometric and magneto-transport measurements and theoretical calculations of the SiGe band-structure. The device fabrication efforts consisted of establishing SiGe device processing capabilities in the Lewis cleanroom. The characterization of microwave transmission lines included studying the losses of various coplanar transmission lines and the development of transitions on silicon. Each part of the project is discussed individually and the findings for each part are presented. Future directions are also discussed.

Morphology-dependent optical absorption and conduction properties of photoelectrochemical photocatalysts for H2 production: A case study

NASA Astrophysics Data System (ADS)

Huda, Muhammad N.; Turner, John A.

2010-06-01

Efficient photoelectrochemical H2 production by solar irradiation depends not only on the photocatalyst's band gap and its band-edge positions but also on the detailed electronic nature of the bands, such as the localization or delocalization of the band edges and their orbital characteristics. These determine the carrier transport properties, reactivity, light absorption strength, etc. and significantly impact the material's efficiency as a photoconverter. The localization or delocalization of the band edges may arise either due to the orbital nature of the bands or the structural morphology of the material. A recent experimental report on a photocatalyst based on s /p orbitals showed very poor performance for H2 production despite the delocalized nature of the s /p bands as compared to the d-bands of transition metal oxides. It is then important to examine whether this poor performance is inherent to these materials or rather arises from some experimental limitations. A theoretical analysis by first-principle methods is well suited to shed light on this question.

Use of Modal Acoustic Emission to Monitor Damage Progression in Carbon Fiber/Epoxy and Implications for Composite Structures

NASA Technical Reports Server (NTRS)

Waller, J. M.; Nichols, C. T.; Wentzel, D. J.; Saulsberry R. L.

2010-01-01

Broad-band modal acoustic emission (AE) data was used to characterize micromechanical damage progression in uniaxial IM7 and T1000 carbon fiber-epoxy tows and an IM7 composite overwrapped pressure vessel (COPV) subjected to an intermittent load hold tensile stress profile known to activate the Felicity ratio (FR). Damage progression was followed by inspecting the Fast Fourier Transforms (FFTs) associated with acoustic emission events. FFT analysis revealed the occurrence of cooperative micromechanical damage events in a frequency range between 100 kHz and 1 MHz. Evidence was found for the existence of a universal damage parameter, referred to here as the critical Felicity ratio, or Felicity ratio at rupture (FR*), which had a value close to 0.96 for the tows and the COPV tested. The implications of using FR* to predict failure in carbon/epoxy composite materials and related composite components such as COPVs are discussed. Trends in the FFT data are also discussed; namely, the difference between the low and high energy events, the difference between early and late-life events, comparison of IM7 and T1000 damage progression, and lastly, the similarity of events occurring at the onset of significant acoustic emission used to calculate the FR.

Tunable band gaps in bio-inspired periodic composites with nacre-like microstructure

NASA Astrophysics Data System (ADS)

Chen, Yanyu; Wang, Lifeng

2014-08-01

Periodic composite materials have many promising applications due to their unique ability to control the propagation of waves. Here, we report the existence and frequency tunability of complete elastic wave band gaps in bio-inspired periodic composites with nacre-like, brick-and-mortar microstructure. Numerical results show that complete band gaps in these periodic composites derive from local resonances or Bragg scattering, depending on the lattice angle and the volume fraction of each phase in the composites. The investigation of elastic wave propagation in finite periodic composites validates the simulated complete band gaps and further reveals the mechanisms leading to complete band gaps. Moreover, our results indicate that the topological arrangement of the mineral platelets and changes of material properties can be utilized to tune the evolution of complete band gaps. Our finding provides new opportunities to design mechanically robust periodic composite materials for wave absorption under hostile environments, such as for deep water applications.

Optical properties of II-VI structures for solar energy utilization

NASA Astrophysics Data System (ADS)

Schrier, Joshua; Demchenko, Denis; Wang, Lin-Wang

2007-03-01

Although II-VI semiconductor materials are abundant, stable, and have direct band gaps, the band gaps are too large for optimal photovoltaic efficiency. However, staggered band alignments of pairs of these materials, and also the formation of intermediate impurity levels in the band gap (which has been demonstrated to increase the efficiency as compared to both single-junction devices), could be utilized to improve the suitability of these materials for solar energy utilization. Previous theoretical studies of these materials are limited, due to the well-known band gap underestimation by density-functional theory. To calculate the absorption spectra, we utilize a band-corrected planewave pseudopotential approach, which gives agreements of within 0.1 eV of the bulk optical gaps values. In this talk, I will present our work on predicting the optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures, nanostructures, and alloys. This work was supported by U.S. Department of Energy under Contract No.DE-AC02-05CH11231 and used the resources of the National Energy Research Scientific Computing Center.

A model for the energy band gap of GaSbxAs1-x and InSbxAs1-x in the whole composition range

NASA Astrophysics Data System (ADS)

Zhao, Chuan-Zhen; Ren, He-Yu; Wei, Tong; Wang, Sha-Sha; Wang, Jun

2018-04-01

The band gap evolutions of GaSbxAs1-x and InSbxAs1-x in the whole composition range are investigated. It is found that the band gap evolutions of GaSbxAs1-x and InSbxAs1-x are determined by two factors. One is the impurity-host interaction in the As-rich and Sb-rich composition ranges. The other is the intraband coupling within the conduction band and separately within the valence band in the moderate composition range. Based on the band gap evolutions of GaSbxAs1-x and InSbxAs1-x, a model is established. In addition, it is found that the impurity-host interaction is determined by not only the mismatches in size and electronegativity between the introduced atoms in the host material and the anions of the host material, but also the difference in electronegativity between the introduced atoms in the host material and the cations of the host material.

Optoelectronic properties analysis of Ti-substituted GaP.

PubMed

Tablero, C

2005-11-08

A study using first principles of the electronic and optical properties of materials derived from a GaP host semiconductor where one Ti atom is substituted for one of the eight P atoms is presented. This material has a metallic intermediate band sandwiched between the valence and conduction bands of the host semiconductor for 0 < or = U < or = 8 eV where U is the Hubbard parameter. The potential of these materials is that when they are used as an absorber of photons in solar cells, the efficiency is increased significantly with respect to that of the host semiconductor. The results show that the main contribution to the intermediate band is the Ti atom and that this material can absorb photons of lower energy than that of the host semiconductor. The efficiency is increased with respect to that of the host semiconductor mainly because of the absorption from the intermediate to conduction band. As U increases, the contribution of the Ti-d orbitals to the intermediate band varies, increasing the d(z2) character at the bottom of the intermediate band.

Zodiacal emission. III - Dust near the asteroid belt

NASA Technical Reports Server (NTRS)

Reach, William T.

1992-01-01

Properties of the zodiacal dust bands are derived from fits to Infrared Astronomical Satellite profiles of the ecliptic. Three observations lead to the conclusion that the dust-band material is spread over a range of heliocentric distances between the asteroid belt and the sun: parallax, color temperature, and wavelength dependence of the band latitudes. The orientations of the midplanes of the bands are found to be typical of asteroids. A model of 'migrating bands', wherein dust is produced near the asteroid belt and spirals into the sun under the influence of Poynting-Robertson drag, is used to explain the range of heliocentric distances of dust-band material.

Spectral reflectance "deconstruction" of the Murchison CM2 carbonaceous chondrite and implications for spectroscopic investigations of dark asteroids

NASA Astrophysics Data System (ADS)

Cloutis, Edward A.; Pietrasz, Valerie B.; Kiddell, Cain; Izawa, Matthew R. M.; Vernazza, Pierre; Burbine, Thomas H.; DeMeo, Francesca; Tait, Kimberly T.; Bell, James F.; Mann, Paul; Applin, Daniel M.; Reddy, Vishnu

2018-05-01

Carbonaceous chondrites (CCs) are important materials for understanding the early evolution of the solar system and delivery of volatiles and organic material to the early Earth. Presumed CC-like asteroids are also the targets of two current sample return missions: OSIRIS-REx to asteroid Bennu and Hayabusa-2 to asteroid Ryugu, and the Dawn orbital mission at asteroid Ceres. To improve our ability to identify and characterize CM2 CC-type parent bodies, we have examined how factors such as particle size, particle packing, and viewing geometry affect reflectance spectra of the Murchison CM2 CC. The derived relationships have implications for disc-resolved examinations of dark asteroids and sampleability. It has been found that reflectance spectra of slabs are more blue-sloped (reflectance decreasing toward longer wavelengths as measured by the 1.8/0.6 μm reflectance ratio), and generally darker, than powdered sample spectra. Decreasing the maximum grain size of a powdered sample results in progressively brighter and more red-sloped spectra. Decreasing the average grain size of a powdered sample results in a decrease in diagnostic absorption band depths, and redder and brighter spectra. Decreasing porosity of powders and variations in surface texture result in spectral changes that may be different as a function of viewing geometry. Increasing thickness of loose dust on a denser powdered substrate leads to a decrease in absorption band depths. Changes in viewing geometry lead to different changes in spectral metrics depending on whether the spectra are acquired in backscatter or forward-scatter geometries. In backscattered geometry, increasing phase angle leads to an initial increase and then decrease in spectral slope, and a general decrease in visible region reflectance and absorption band depths, and frequent decreases in absorption band minima positions. In forward scattering geometry, increasing phase angle leads to small non-systematic changes in spectral slope, and general decreases in visible region reflectance, and absorption band depths. The highest albedos and larger band depths are generally seen in the lowest phase angle backscattering geometry spectra. The reddest spectra are generally seen in the lowest phase angle backscatter geometry spectra. For the same phase angle, spectra acquired in forward scatter geometry are generally redder and darker and have shallower absorption bands than those acquired in backscatter geometry. Overall, backscatter geometry-acquired spectra are flatter, brighter, and have deeper 0.7 μm region absorption band depths than forward scatter geometry-acquired spectra. It was also found that the 0.7, 0.9, and 1.1 μm absorption bands in Murchison spectra, which are attributable to various Fe electronic processes, are ubiquitous and can be used to recognize CM2 chondrites regardless of the physical properties of the meteorite and viewing geometry.

ERIM progress report on use of ERTS-1 data: Summary report of work on ten tasks

NASA Technical Reports Server (NTRS)

Thomson, F. J. (Principal Investigator)

1973-01-01

The author has identified the following significant results. Several of the tasks have produced significant results which are summarized: (1) Absolute water depth can be calculated from a ratio of signals from bands MSS 4 and MSS 5. (2) A 13 category terrain feature classification map of Yellowstone National Park has been produced using supervised pattern recognition techniques. (3) ERTS-1 data has been shown to provide a detection and monitoring capability for a number of water quality problems associated with off-shore ocean dumping sites and inland lakes. (4) A corrected ratio of bands MSS-5 and MSS-7 signals has been formed. (5) A concise format has been devised for storing the ratio signatures of geologic rock and mineral materials determined from laboratory reflectance spectra. (6) Results of work in information extraction demonstrate: signal variability exists among ERTS-1 detectors in any one spectral band that will impact users doing quantitative analysis on successive ERTS-1 images; a newly developed computer-aided procedure for correlating ERTS-1 pixels to ground features; the strong influence of atmospheric effects in ERTS-1 data; and area estimation accuracies are better using the ERIM proportion estimation algorithm than for conventional recognition techniques.

Ideal band shape in the potential thermoelectric material CuAlO2: Comparison to NaxCoO2

NASA Astrophysics Data System (ADS)

Mori, Kouta; Sakakibara, Hirofumi; Usui, Hidetomo; Kuroki, Kazuhiko

2013-08-01

A potential thermoelectric material CuAlO2 is theoretically studied. We first construct a model Hamiltonian of CuAlO2 based on the first principles band calculation, and calculate the Seebeck coefficient. Then, we compare the model with that of a well-known thermoelectric material NaxCoO2, and discuss the similarities and the differences. It is found that the two materials are similar from an electronic structure viewpoint in that they have a peculiar pudding-mold type band shape, which is advantageous for thermoelectric materials. There are, however, some differences, and we analyze the origin of the difference from a microscopic viewpoint. The band shape (a very flat band top but with an overall wide bandwidth) of CuAlO2 is found to be even more ideal than that of NaxCoO2, and we predict that once a significant amount of holes is doped in CuAlO2, thermoelectric properties (especially the power factor) even better than those of NaxCoO2 can be expected.

Layered Chalcogenides beyond Graphene: from Electronic Structure Evolution to the Spin Transport

NASA Astrophysics Data System (ADS)

Yuan, Hongtao

2014-03-01

Recent efforts on graphene-like atomic layer materials, aiming at novel electronic properties and quantum phenomena beyond graphene, have attracted much attention for potential electronics/spintronics applications. Compared to the weak spin-orbit-interaction (SOI) in graphene, metal chalcogenides MX2 have heavy 4d/5d elements with strong atomic SOI, providing a unique way for generating spin polarization based on valleytronics physics. Indeed, such a spin-polarized band structure has been demonstrated theoretically and supported by optical investigations. However, despite these exciting progresses, following two important issues in MX2 community remain elusive: 1. the quantitative band structure of MX2 compounds (where are the valleys -band maxima/minima- locating in the BZ) have not been experimentally confirmed. Especially for those cleaved ultrathin mono- and bi-layer flakes hosting most of recently-reported exotic phenomena at the 2D limit, the direct detection for band dispersion becomes of great importance for valleytronics. 2. Spin transports have seldom been reported even though such a strong SOI system can serve as an ideal platform for the spin polarization and spin transport. In this work, we started from the basic electronic structures of representative MX2, obtained by ARPES, and investigated both the band variation between these compounds and their band evolution from bulk to the monolayer limit. After having a systematic understanding on band structures, we reported a giant Zeeman-type spin-polarization generated and modulated by an external electric field in WSe2 electric-double-layer transistors. The non-magnetic approach for realizing such an intriguing spin splitting not only keeps the system time-reversally invariant but also suggests a new paradigm for manipulating the spin-degrees of freedom of electrons. Acknowledge the support from DoE, BES, Division of MSE under contract DE-AC02-76SF00515.

Complexities in pyroxene compositions derived from absorption band centers: Examples from Apollo samples, HED meteorites, synthetic pure pyroxenes, and remote sensing data

NASA Astrophysics Data System (ADS)

Moriarty, D. P.; Pieters, C. M.

2016-02-01

We reexamine the relationship between pyroxene composition and near-infrared absorption bands, integrating measurements of diverse natural and synthetic samples. We test an algorithm (PLC) involving a two-part linear continuum removal and parabolic fits to the 1 and 2 μm bands—a computationally simple approach which can easily be automated and applied to remote sensing data. Employing a suite of synthetic pure pyroxenes, the PLC technique is shown to derive similar band centers to the modified Gaussian model. PLC analyses are extended to natural pyroxene-bearing materials, including (1) bulk lunar basalts and pyroxene separates, (2) diverse lunar soils, and (3) HED meteorites. For natural pyroxenes, the relationship between composition and absorption band center differs from that of synthetic pyroxenes. These differences arise from complexities inherent in natural materials such as exsolution, zoning, mixing, and space weathering. For these reasons, band center measurements of natural pyroxene-bearing materials are compositionally nonunique and could represent three distinct scenarios (1) pyroxene with a narrow compositional range, (2) complexly zoned pyroxene grains, or (3) a mixture of multiple pyroxene (or nonpyroxene) components. Therefore, a universal quantitative relationship between band centers and pyroxene composition cannot be uniquely derived for natural pyroxene-bearing materials without additional geologic context. Nevertheless, useful relative relationships between composition and band center persist in most cases. These relationships are used to interpret M3 data from the Humboldtianum Basin. Four distinct compositional units are identified (1) Mare Humboldtianum basalts, (2) distinct outer basalts, (3) low-Ca pyroxene-bearing materials, and (4) feldspathic materials.

Recent Developments in Quantum-Well Infrared Photodetectors

NASA Technical Reports Server (NTRS)

Gunapala, S. D.; Bandara, K. M. S. V.

1995-01-01

Intrinsic infrared (IR) detectors in the long wavelength range (8-20 Am) are based on an optically excited interband transition, which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction band as shown. These photoelectrons can be collected efficiently, thereby producing a photocurrent in the external circuit. Since the incoming photon has to promote an electron from the valence band to the conduction band, the energy of the photon (h(sub upsilon)) must be higher than the E(sub g) of the photosensitive material. Therefore, the spectral response of the detectors can be controlled by controlling the E(sub g) of the photosensitive material. Examples for such materials are Hg(1-x), Cd(x), Te, and Pb(1-x), Sn(x), Te, in which the energy gap can be controlled by varying x. This means detection of very-long-wavelength IR radiation up to 20 microns requires small band gaps down to 62 meV. It is well known that these low band gap materials, characterized by weak bonding and low melting points, are more difficult to grow and process than large-band gap semiconductors such as GaAs. These difficulties motivate the exploration of utilizing the intersub-band transitions in multiquantum well (MQW) structures made of more refractory large-band gap semiconductors. The idea of using MQW structures to detect IR radiation can be explained by using the basic principles of quantum mechanics. The quantum well is equivalent to the well-known particle in a box problem in quantum mechanics, which can be solved by the time independent Schroudiner equation.

Development status of the mid-infrared two-field camera and spectrograph MIMIZUKU for the TAO 6.5-m Telescope

NASA Astrophysics Data System (ADS)

Kamizuka, Takafumi; Miyata, Takashi; Sako, Shigeyuki; Ohsawa, Ryou; Okada, Kazushi; Uchiyama, Masahito S.; Mori, Kiyoshi; Yamaguchi, Jumpei; Asano, Kentaro; Uchiyama, Mizuho; Sakon, Itsuki; Onaka, Takashi; Kataza, Hirokazu; Hasegawa, Sunao; Usui, Fumihiko; Takato, Naruhisa; Aoki, Tsutomu; Doi, Mamoru; Kato, Natsuko M.; Kitagawa, Yutaro; Kobayakawa, Yutaka; Kohno, Kotaro; Konishi, Masahiro; Minezaki, Takeo; Morokuma, Tomoki; Motohara, Kentaro; Ohashi, Hirofumi; Soyano, Takao; Takahashi, Hidenori; Tamura, Yoichi; Tanabé, Toshihiko; Tanaka, Masuo; Tarusawa, Ken'ichi; Terao, Yasunori; Yoshii, Yuzuru

2016-08-01

MIMIZUKU is the first-generation mid-infrared instrument for the university of Tokyo Atacama Observatory (TAO) 6.5-m telescope. MIMIZUKU provides imaging and spectroscopic monitoring capabilities in a wide wavelength range from 2 to 38 μm, including unique bands like 2.7-μm and 30-μm band. Recently, we decided to add spectroscopic functions, KL-band mode (λ= 2.1-4.0 μm R =λ/Δλ 210) and 2.7-μm band mode ( λ= 2.4-2.95 μm R 620), and continuous spectroscopic coverage from 2.1 to 26 μm is realized by this update. Their optical designing is completed, and fabrications of optical elements are ongoing. As recent progress, we also report the completion of the cryogenic system and optics. The cryogenic system has been updated by changing materials and structures of thermal links, and the temperatures of the optical bench and detector mounting stages finally achieved required temperatures. Their stability against instrument attitude is also confirmed through an inclination test. As for the optics, its gold-plated mirrors have been recovered from galvanic corrosion by refabrication and reconstruction. Enough image quality and stability are confirmed by room-temperature tests. MIMIZUKU is intended to be completed in this autumn, and commissioning at the Subaru telescope and scientific operations on the TAO telescope are planned in 2017 and around 2019, respectively. In this paper, these development activities and future prospects of MIMIZUKU are reported.

The shear band controlled deformation in metallic glass: a perspective from fracture

NASA Astrophysics Data System (ADS)

Yang, G. N.; Shao, Y.; Yao, K. F.

2016-02-01

Different from the homogenous deformation in conventional crystalline alloys, metallic glasses and other work-softening materials deform discontinuously by localized plastic strain in shear bands. Here by three-point bending test on a typical ductile Pd-Cu-Si metallic glass, we found that the plastic deformed region during fracture didn’t follow the yielding stress distribution as the conventional material mechanics expected. We speculated that such special behavior was because the shear bands in metallic glasses could propagate easily along local shear stress direction once nucleated. Based on a 3D notch tip stress field simulation, we considered a new fracture process in a framework of multiple shear band deformation mechanism instead of conventional materials mechanics, and successfully reproduced the as-observed complicate shear band morphologies. This work clarifies many common misunderstandings on metallic glasses fracture, and might also provide a new insight to the shear band controlled deformation. It suggests that the deformation of metallic glasses is sensitive to local stress condition, and therefore their mechanical properties would depend on not only the material, but also other external factors on stress condition. We hope that start from this work, new methods, criteria, or definitions could be proposed to further study these work-softening materials, especially for metallic glasses.

What are the factors that affect band 5 nurses' career development and progression?

PubMed

Balls, Paula

Continuing professional development (CPD) and career progression opportunities have been linked with job satisfaction and intent to remain in nursing. To provide an insight into band 5 registered nurses' perceptions of development opportunities and their ability to change posts. A hermeneutic phenomenological approach was used, collecting data through semi structured interviews with six RNs. Seven themes emerged, including the thirst for knowledge and the importance of structured learning and career advice. Barriers to career development were perceived as the working environment and the trust not enabling and facilitating development through funding and release time. Ward and team culture can inhibit career development and progression by failing to nurture staff and promote self confidence. In addition, organisational changes can facilitate career mobility.

Progress and prospects of GaN-based VCSEL from near UV to green emission

NASA Astrophysics Data System (ADS)

Yu, Hsin-chieh; Zheng, Zhi-wei; Mei, Yang; Xu, Rong-bin; Liu, Jian-ping; Yang, Hui; Zhang, Bao-ping; Lu, Tien-chang; Kuo, Hao-chung

2018-01-01

GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface-mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the 'green gap'.

Long Baseline Nulling Interferometry with the Keck Telescopes: A Progress Report

NASA Technical Reports Server (NTRS)

Mennesson, Bertrand; Akeson, R.; Appleby, E.; Bell, J.; Booth, A.; Colavita, M. M.; Crawford, S.; Creech-Eakman, M. J.; Dahl, W.; Fanson, J.;

High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

2015-01-01

The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

The dynamics of a shear band

NASA Astrophysics Data System (ADS)

Giarola, Diana; Capuani, Domenico; Bigoni, Davide

2018-03-01

A shear band of finite length, formed inside a ductile material at a certain stage of a continued homogeneous strain, provides a dynamic perturbation to an incident wave field, which strongly influences the dynamics of the material and affects its path to failure. The investigation of this perturbation is presented for a ductile metal, with reference to the incremental mechanics of a material obeying the J2-deformation theory of plasticity (a special form of prestressed, elastic, anisotropic, and incompressible solid). The treatment originates from the derivation of integral representations relating the incremental mechanical fields at every point of the medium to the incremental displacement jump across the shear band faces, generated by an impinging wave. The boundary integral equations (under the plane strain assumption) are numerically approached through a collocation technique, which keeps into account the singularity at the shear band tips and permits the analysis of an incident wave impinging a shear band. It is shown that the presence of the shear band induces a resonance, visible in the incremental displacement field and in the stress intensity factor at the shear band tips, which promotes shear band growth. Moreover, the waves scattered by the shear band are shown to generate a fine texture of vibrations, parallel to the shear band line and propagating at a long distance from it, but leaving a sort of conical shadow zone, which emanates from the tips of the shear band.

Small band gap superlattices as intrinsic long wavelength infrared detector materials

NASA Technical Reports Server (NTRS)

Smith, Darryl L.; Mailhiot, C.

1990-01-01

Intrinsic long wavelength (lambda greater than or equal to 10 microns) infrared (IR) detectors are currently made from the alloy (Hg, Cd)Te. There is one parameter, the alloy composition, which can be varied to control the properties of this material. The parameter is chosen to set the band gap (cut-off wavelength). The (Hg, Cd)Te alloy has the zincblend crystal structure. Consequently, the electron and light-hole effective masses are essentially inversely proportional to the band gap. As a result, the electron and light-hole effective masses are very small (M sub(exp asterisk)/M sub o approx. M sub Ih/M sub o approx. less than 0.01) whereas the heavy-hole effective mass is ordinary size (M sub hh(exp asterisk)/M sub o approx. 0.4) for the alloy compositions required for intrinsic long wavelength IR detection. This combination of effective masses leads to rather easy tunneling and relatively large Auger transition rates. These are undesirable characteristics, which must be designed around, of an IR detector material. They follow directly from the fact that (Hg, Cd)Te has the zincblend crystal structure and a small band gap. In small band gap superlattices, such as HgTe/CdTe, In(As, Sb)/InSb and InAs/(Ga,In)Sb, the band gap is determined by the superlattice layer thicknesses as well as by the alloy composition (for superlattices containing an alloy). The effective masses are not directly related to the band gap and can be separately varied. In addition, both strain and quantum confinement can be used to split the light-hole band away from the valence band maximum. These band structure engineering options can be used to reduce tunneling probabilities and Auger transition rates compared with a small band gap zincblend structure material. Researchers discuss the different band structure engineering options for the various classes of small band gap superlattices.

Numerical band structure calculations of plasma metamaterials

NASA Astrophysics Data System (ADS)

Pederson, Dylan; Kourtzanidis, Konstantinos; Raja, Laxminarayan

2015-09-01

Metamaterials (MM) are materials engineered to display negative macroscopic permittivity and permeability. These materials allow for designed control over electromagnetic energy flow, especially at frequencies where natural materials do not interact. Plasmas have recently found application in MM as a negative permittivity component. The permittivity of a plasma depends on its electron density, which can be controlled by an applied field. This means that plasmas can be used in MM to actively control the transmission or reflection of incident waves. This work focuses on a plasma MM geometry in which microplasmas are generated in perforations in a metal plate. We characterizethis material by its band structure, which describes its interaction with incident waves. The plasma-EM interactions are obtained by coupling Maxwell's equations to a simplified plasma momentum equation. A plasma density profile is prescribed, and its effect on the band structure is investigated. The band structure calculations are typically done for static structures, whereas our current density responds to the incident waves. The resulting band structures are compared with experimental results.

A Wide Band Absorbing Material Design Using Band-Pass Frequency Selective Surface

NASA Astrophysics Data System (ADS)

Xu, Yonggang; Xu, Qiang; Liu, Ting; Zheng, Dianliang; Zhou, Li

2018-03-01

Based on the high frequency advantage characteristics of the Fe based absorbing coating, a method for designing the structure of broadband absorbing structure by using frequency selective surface (FSS) is proposed. According to the transmission and reflection characteristic of the different size FSS structure, the frequency variation characteristic was simulated. Secondly, the genetic algorithm was used to optimize the high frequency broadband absorbing materials, including the single and double magnetic layer material. Finally, the absorbing characteristics in iron layer were analyzed as the band pass FSS structure was embedded, the results showed that the band-pass FSS had the influence on widening the absorbing frequency. As the FSS was set as the bottom layer, it was effective to achieve the good absorbing property in low frequency and the high frequency absorbing performance was not weakened, because the band-pass FSS led the low frequency absorption and the high frequency shielding effect. The results of this paper are of guiding significance for designing and manufacturing the broadband absorbing materials.

Superlattice optical device

DOEpatents

Biefeld, R.M.; Fritz, I.J.; Gourley, P.L.; Osbourn, G.C.

A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

Energies of rare-earth ion states relative to host bands in optical materials from electron photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Thiel, Charles Warren

There are a vast number of applications for rare-earth-activated materials and much of today's cutting-edge optical technology and emerging innovations are enabled by their unique properties. In many of these applications, interactions between the rare-earth ion and the host material's electronic states can enhance or inhibit performance and provide mechanisms for manipulating the optical properties. Continued advances in these technologies require knowledge of the relative energies of rare-earth and crystal band states so that properties of available materials may be fully understood and new materials may be logically developed. Conventional and resonant electron photoemission techniques were used to measure 4f electron and valence band binding energies in important optical materials, including YAG, YAlO3, and LiYF4. The photoemission spectra were theoretically modeled and analyzed to accurately determine relative energies. By combining these energies with ultraviolet spectroscopy, binding energies of excited 4fN-15d and 4fN+1 states were determined. While the 4fN ground-state energies vary considerably between different trivalent ions and lie near or below the top of the valence band in optical materials, the lowest 4f N-15d states have similar energies and are near the bottom of the conduction band. As an example for YAG, the Tb3+ 4f N ground state is in the band gap at 0.7 eV above the valence band while the Lu3+ ground state is 4.7 eV below the valence band maximum; however, the lowest 4fN-15d states are 2.2 eV below the conduction band for both ions. We found that a simple model accurately describes the binding energies of the 4fN, 4fN-1 5d, and 4fN+1 states. The model's success across the entire rare-earth series indicates that measurements on two different ions in a host are sufficient to predict the energies of all rare-earth ions in that host. This information provides new insight into electron transfer transitions, luminescence quenching, and valence stability. All of these results lead to a clearer picture for the host's effect on the rare-earth ion's electron binding energies and will motivate fundamental theoretical analysis and accelerate the development of new optical materials.

Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

NASA Astrophysics Data System (ADS)

Saladukha, D.; Clavel, M. B.; Murphy-Armando, F.; Greene-Diniz, G.; Grüning, M.; Hudait, M. K.; Ochalski, T. J.

2018-05-01

Germanium is an indirect semiconductor which attracts particular interest as an electronics and photonics material due to low indirect-to-direct band separation. In this work we bend the bands of Ge by means of biaxial tensile strain in order to achieve a direct band gap. Strain is applied by growth of Ge on a lattice mismatched InGaAs buffer layer with variable In content. Band structure is studied by photoluminescence and photoreflectance, giving the indirect and direct bands of the material. Obtained experimental energy band values are compared with a k .p simulation. Photoreflectance spectra are also simulated and compared with the experiment. The obtained results indicate direct band structure obtained for a Ge sample with 1.94 % strain applied, with preferable Γ valley to heavy hole transition.

Bi-directional evolutionary optimization for photonic band gap structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Fei; School of Civil Engineering, Central South University, Changsha 410075; Huang, Xiaodong, E-mail: huang.xiaodong@rmit.edu.au

2015-12-01

Toward an efficient and easy-implement optimization for photonic band gap structures, this paper extends the bi-directional evolutionary structural optimization (BESO) method for maximizing photonic band gaps. Photonic crystals are assumed to be periodically composed of two dielectric materials with the different permittivity. Based on the finite element analysis and sensitivity analysis, BESO starts from a simple initial design without any band gap and gradually re-distributes dielectric materials within the unit cell so that the resulting photonic crystal possesses a maximum band gap between two specified adjacent bands. Numerical examples demonstrated the proposed optimization algorithm can successfully obtain the band gapsmore » from the first to the tenth band for both transverse magnetic and electric polarizations. Some optimized photonic crystals exhibit novel patterns markedly different from traditional designs of photonic crystals.« less

First-principles studies of a photovoltaic material based on silicon heavily codoped with sulfur and nitrogen

NASA Astrophysics Data System (ADS)

Dong, Xiao; Wang, Yongyong; Song, Xiaohui; Yang, Feng

2018-03-01

In silicon co-hyperdoped with nitrogen and sulfur, dopant atoms tend to form dimers in the near-equilibrium process. The dimer that contains substitutional N and S atoms has the lowest formation energy and can form an impurity band that overlaps with the conduction band (CB). When separating the two atoms far apart from each other, the impurity band is clearly isolated from the CB and becomes an intermediate band (IB). The sub-band-gap absorption decreases with the decrease in the substitutional atom distance. The sub-band-gap absorption of the material is the combined effect of the configurations with different N-S distances.

Investigations of the Nonlinear Optical Response of Composite and Photonic Band Gap Materials

DTIC Science & Technology

1998-11-01

M. J. Bloemer, M. Scalora , J. P. Dowling, and C. M. Bowden, "Measurement of spontaneous-emission enhancement near the one-dimensional photonic band...with applications to photonic band structures," Phys. Rev. A 46, 612 (1992). 5. M. Scalora , J. P. Dowling, M. Tocci, M. J. Bloemer, C. M. Bowden, and...J. W. Haus, "Dipole emission rates in one-dimensional photonic band-gap materials," Appl. Phys. B 60, S57 (1995). 6. J. P. Dowling, M. Scalora , M. J

Improvements on the optical properties of Ge-Sb-Se chalcogenide glasses with iodine incorporation

NASA Astrophysics Data System (ADS)

Jiang, Chen; Wang, Xunsi; Zhu, Qingde; Nie, Qiuhua; Zhu, Minming; Zhang, Peiquan; Dai, Shixun; Shen, Xiang; Xu, Tiefeng; Cheng, Ci; Liao, Fangxing; Liu, Zijun; Zhang, Xianghua

2015-11-01

Decreasing glass network defects and improving optical transmittance are essential work for material researchers. We studied the function of halogen iodine (I) acting as a glass network modifier in Ge-Sb-Se-based chalcogenide glass system. A systematic series of Ge20Sb5Se75-xIx (x = 0, 5, 10, 15, 20 at.%) infrared (IR) chalcohalide glasses were investigated to decrease the weak absorption tail (WAT) and improve the mid-IR transparency. The mechanisms of the halogen I affecting the physical, thermal, and optical properties of Se-based chalcogenide glasses were reported. The structural evolutions of these glasses were also revealed by Raman spectroscopy and camera imaging. The progressive substitution of I for Se increased the optical bandgap. The WAT and scatting loss significantly decreased corresponding to the progressive decrease in structural defects caused by dangling bands and structure defects in the original Ge20Sb5Se75 glass. The achieved maximum IR transparency of Ge-Sb-Se-I glasses can reach up to 80% with an effective transmission window between 0.94 μm and 17 μm, whereas the absorption coefficient decreased to 0.029 cm-1 at 10.16 μm. Thus, these materials are promising candidates for developing low-loss IR fibers.

Recent Progress on Stability and Passivation of Black Phosphorus.

PubMed

Abate, Yohannes; Akinwande, Deji; Gamage, Sampath; Wang, Han; Snure, Michael; Poudel, Nirakar; Cronin, Stephen B

2018-05-11

From a fundamental science perspective, black phosphorus (BP) is a canonical example of a material that possesses fascinating surface and electronic properties. It has extraordinary in-plane anisotropic electrical, optical, and vibrational states, as well as a tunable band gap. However, instability of the surface due to chemical degradation in ambient conditions remains a major impediment to its prospective applications. Early studies were limited by the degradation of black phosphorous surfaces in air. Recently, several robust strategies have been developed to mitigate these issues, and these novel developments can potentially allow researchers to exploit the extraordinary properties of this material and devices made out of it. Here, the fundamental chemistry of BP degradation and the tremendous progress made to address this issue are extensively reviewed. Device performances of encapsulated BP are also compared with nonencapsulated BP. In addition, BP possesses sensitive anisotropic photophysical surface properties such as excitons, surface plasmons/phonons, and topologically protected and Dirac semi-metallic surface states. Ambient degradation as well as any passivation method used to protect the surface could affect the intrinsic surface properties of BP. These properties and the extent of their modifications by both the degradation and passivation are reviewed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics.

PubMed

Ten Cate, Sybren; Sandeep, C S Suchand; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J; Schins, Juleon M; Siebbeles, Laurens D A

2015-02-17

CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production of free charges that can contribute to the photocurrent in a device. We show that free mobile charges can be efficiently produced via CM in solids of strongly coupled PbSe QDs. Strong electronic coupling between the QDs resulted in a charge carrier mobility of the order of 1 cm(2) V(-1) s(-1). This mobility is sufficiently high so that virtually all electron-hole pairs escape from recombination. The impact of temperature on the CM efficiency in PbSe QD solids was also studied. We inferred that temperature has no observable effect on the rate of cooling of hot charges nor on the CM rate. We conclude that exploitation of CM requires that charges have sufficiently high mobility to escape from recombination. The contribution of CM to the efficiency of photovoltaic devices can be further enhanced by an increase of the CM efficiency above the energetic threshold of twice the band gap. For large-scale applications in photovoltaic devices, it is important to develop abundant and nontoxic materials that exhibit efficient CM.

Visible light photoreduction of CO.sub.2 using heterostructured catalysts

DOEpatents

Matranga, Christopher; Thompson, Robert L; Wang, Congjun

2015-03-24

The method provides for use of sensitized photocatalyst for the photocatalytic reduction of CO.sub.2 under visible light illumination. The photosensitized catalyst is comprised of a wide band gap semiconductor material, a transition metal co-catalyst, and a semiconductor sensitizer. The semiconductor sensitizer is photoexcited by visible light and forms a Type II band alignment with the wide band gap semiconductor material. The wide band gap semiconductor material and the semiconductor sensitizer may be a plurality of particles, and the particle diameters may be selected to accomplish desired band widths and optimize charge injection under visible light illumination by utilizing quantum size effects. In a particular embodiment, CO.sub.2 is reduced under visible light illumination using a CdSe/Pt/TiO2 sensitized photocatalyst with H.sub.2O as a hydrogen source.

Alkali/TX{sub 2} catalysts for CO/H{sub 2} conversion to C{sub 1}-C{sub 4} alcohols. Final technical progress report, September 1, 1988--August 31, 1991

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klier, K.; Herman, R.G.; Richards-Babb, M.

1993-03-01

The objective of this research is to determine the patterns of variations of catalyst activity and selectivity for the synthesis of alcohols from H{sub 2}/CO synthesis gas. Since the source of carbon can be coal-derived synthesis gas, this research makes a contribution to the technology for high quality clean transportation fuels and for basic chemicals from coal. Catalysts prepared were principally based on MoS{sub 2}, RuS{sub 2}, TaS{sub 2}, and NbS{sub 2}. Catalytic testing of these materials was carried out both before and after surface doping with Cs. In alcohol synthesis activation of hydrogen by the catalyst surface is essential.more » Knowledge of transition metal disulfide surface properties is important before the mechanism of hydrogen dissociation can be addressed. The electronic structures of MoS{sub 2}, RuS{sub 2}, and NbS{sub 2} were studied both theoretically and experimentally. Experimental valence bands were obtained by high resolution electron spectroscopy for chemical analysis (HR-ESCA, also referred to as x-ray photoelectron spectroscopy) and theoretical valence bands were calculated using solid state extended Hueckel theory. Comparison of two-dimensional (2-D) MoS{sub 2} theoretical valence bands with the experimental HR-ESCA valence bands of polycrystalline MoS{sub 2} led to parametrization of the S 3s, S 3p, and Mo 4d atomic ionization potentials and Slater-type coefficients and exponents. The S 3s and S 3p parameters obtained for MoS{sub 2} were used to obtain the NbS{sub 2} and RuS{sub 2} theoretical valence bands.« less

Tantalum-based semiconductors for solar water splitting.

PubMed

Zhang, Peng; Zhang, Jijie; Gong, Jinlong

2014-07-07

Solar energy utilization is one of the most promising solutions for the energy crises. Among all the possible means to make use of solar energy, solar water splitting is remarkable since it can accomplish the conversion of solar energy into chemical energy. The produced hydrogen is clean and sustainable which could be used in various areas. For the past decades, numerous efforts have been put into this research area with many important achievements. Improving the overall efficiency and stability of semiconductor photocatalysts are the research focuses for the solar water splitting. Tantalum-based semiconductors, including tantalum oxide, tantalate and tantalum (oxy)nitride, are among the most important photocatalysts. Tantalum oxide has the band gap energy that is suitable for the overall solar water splitting. The more negative conduction band minimum of tantalum oxide provides photogenerated electrons with higher potential for the hydrogen generation reaction. Tantalates, with tunable compositions, show high activities owning to their layered perovskite structure. (Oxy)nitrides, especially TaON and Ta3N5, have small band gaps to respond to visible-light, whereas they can still realize overall solar water splitting with the proper positions of conduction band minimum and valence band maximum. This review describes recent progress regarding the improvement of photocatalytic activities of tantalum-based semiconductors. Basic concepts and principles of solar water splitting will be discussed in the introduction section, followed by the three main categories regarding to the different types of tantalum-based semiconductors. In each category, synthetic methodologies, influencing factors on the photocatalytic activities, strategies to enhance the efficiencies of photocatalysts and morphology control of tantalum-based materials will be discussed in detail. Future directions to further explore the research area of tantalum-based semiconductors for solar water splitting are also discussed.

Interstellar PAH Analogs in the Laboratory: Comparison with Astronomical Data

NASA Technical Reports Server (NTRS)

Salama, Farid

2005-01-01

Polycyclic Aromatic Hydrocarbons (PAHs) are an important and ubiquitous component of carbon-bearing materials in space. PAHs are the best-known candidates to account for the IR emission bands (UIR bands) and PAH spectral features are now being used as new probes of the ISM. PAHs are also thought to be among the carriers of the diffuse interstellar absorption bands (DIBs). In the model dealing with the interstellar spectral features, PAHs are present as a mixture of radicals, ions and neutral species. PAH ionization states reflect the ionization balance of the medium while PAH size, composition, and structure reflect the energetic and chemical history of the medium. A major challenge for laboratory astrophysics is to reproduce (in a realistic way) the physical conditions that exist in the emission and/or absorption interstellar zones. An extensive laboratory program has been developed at NASA Ames to assess the physical and chemical properties of PAHs in such environments and to describe how they influence the radiation and energy balance in space and the interstellar chemistry. In particular, laboratory experiments provide measurements of the spectral characteristics of interstellar PAH analogs from the ultraviolet and visible range to the infrared range for comparison with astronomical data. This paper will focus on the recent progress made in the laboratory to measure the direct absorption spectra of neutral and ionized PAHs in the near-UV and visible range. Intrinsic band profiles and band positions of cold gas-phase PAHs can now be measured with high-sensitivity spectroscopy and directly compared to the astronomical data. Preliminary conclusions from the comparison of the laboratory data with astronomical observations will also be presented.

Differences in Landsat TM derived lava flow thermal structures during summit and flank eruption at Mount Etna

NASA Astrophysics Data System (ADS)

Lombardo, V.; Buongiorno, M. F.; Pieri, D.; Merucci, L.

2004-06-01

The simultaneous solution of the Planck equation (the so-called "dual-band" technique) for two shortwave infrared Landsat Thematic Mapper (TM) bands allows an estimate of the fractional area of the hottest part of an active flow and the temperature of the cooler crust. Here, the dual-band method has been applied to a time series of Mount Etna eruptions. The frequency distribution of the fractional area of the hottest component reveals specific differences between summit and flank lava flows. The shape of the density function shows a trend consistent with a Gaussian distribution and suggests a relationship between the moments of the distribution and the emplacement environment. Because flow composition of Etnean lavas generally remains constant during the duration of their emplacement, it appears that the shape of any particular frequency distribution is probably related to fluid mechanical aspects of flow emplacement that affect flow velocity and flow heat loss and thus the rate of formation of the surface crust. These factors include the influence of topographical features such as changes in slope gradient, changes in volume effusion rate, and progressive downflow increases in bulk or effective viscosity. A form of the general theoretical solution for the 'dual-band' system, which illustrates the relationship between radiance in TM bands 5 and 7, corresponding to hot fractional area and crust temperature, is presented. Generally speaking, it appears that for a given flow at any point in time, larger fractional areas of exposed hot material are correlated with higher temperatures and that, while the overall shape of that distribution is common for the flows studied, its amplitude and slope reflect individual flow rheological regimes.

Unraveling submicron-scale mechanical heterogeneity by three-dimensional X-ray microdiffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Runguang; Xie, Qingge; Wang, Yan-Dong

Shear banding is a ubiquitous phenomenon of severe plastic deformation, and damage accumulation in shear bands often results in the catastrophic failure of a material. Despite extensive studies, the microscopic mechanisms of strain localization and deformation damage in shear bands remain elusive due to their spatial-temporal complexities embedded in bulk materials. Here we conducted synchrotron-based X-ray microdiffraction (μXRD) experiments to map out the 3D lattice strain field with a submicron resolution around fatigue shear bands in a stainless steel. Both in situ and postmortem μXRD results revealed large lattice strain gradients at intersections of the primary and secondary shear bands.more » Such strain gradients resulted in severe mechanical heterogeneities across the fatigue shear bands, leading to reduced fatigue limits in the high-cycle regime. The ability to spatially quantify the localized strain gradients with submicron resolution through μXRD opens opportunities for understanding the microscopic mechanisms of damage and failure in bulk materials.« less

Electric-dipole effect of defects on the energy band alignment of rutile and anatase TiO₂.

PubMed

Zhang, Daoyu; Yang, Minnan; Dong, Shuai

2015-11-21

Titanium dioxide materials have been studied intensively and extensively for photocatalytic applications. A long-standing open question is the energy band alignment of rutile and anatase TiO2 phases, which can affect the photocatalytic process in the composite system. There are basically two contradictory viewpoints about the alignment of these two TiO2 phases supported by the respective experiments: (1) straddling type and (2) staggered type. In this work, our DFT plus U calculations show that the perfect rutile(110) and anatase(101) surfaces have the straddling type band alignment, whereas the surfaces with defects can turn the band alignment into the staggered type. The electric dipoles induced by defects are responsible for the reversal of band alignment. Thus the defects introduced during the preparation and post-treatment processes of materials are probably the answer to the above open question regarding the band alignment, which can be considered in real practice to tune the photocatalytic activity of materials.

Unraveling submicron-scale mechanical heterogeneity by three-dimensional X-ray microdiffraction

DOE PAGES

Li, Runguang; Xie, Qingge; Wang, Yan-Dong; ...

2017-12-28

Shear banding is a ubiquitous phenomenon of severe plastic deformation, and damage accumulation in shear bands often results in the catastrophic failure of a material. Despite extensive studies, the microscopic mechanisms of strain localization and deformation damage in shear bands remain elusive due to their spatial-temporal complexities embedded in bulk materials. Here we conducted synchrotron-based X-ray microdiffraction (μXRD) experiments to map out the 3D lattice strain field with a submicron resolution around fatigue shear bands in a stainless steel. Both in situ and postmortem μXRD results revealed large lattice strain gradients at intersections of the primary and secondary shear bands.more » Such strain gradients resulted in severe mechanical heterogeneities across the fatigue shear bands, leading to reduced fatigue limits in the high-cycle regime. The ability to spatially quantify the localized strain gradients with submicron resolution through μXRD opens opportunities for understanding the microscopic mechanisms of damage and failure in bulk materials.« less

Unraveling submicron-scale mechanical heterogeneity by three-dimensional X-ray microdiffraction

PubMed Central

Li, Runguang; Xie, Qingge; Wang, Yan-Dong; Liu, Wenjun; Wang, Mingguang; Wu, Guilin; Li, Xiaowu; Zhang, Minghe; Lu, Zhaoping; Geng, Chang; Zhu, Ting

2018-01-01

Shear banding is a ubiquitous phenomenon of severe plastic deformation, and damage accumulation in shear bands often results in the catastrophic failure of a material. Despite extensive studies, the microscopic mechanisms of strain localization and deformation damage in shear bands remain elusive due to their spatial−temporal complexities embedded in bulk materials. Here we conducted synchrotron-based X-ray microdiffraction (μXRD) experiments to map out the 3D lattice strain field with a submicron resolution around fatigue shear bands in a stainless steel. Both in situ and postmortem μXRD results revealed large lattice strain gradients at intersections of the primary and secondary shear bands. Such strain gradients resulted in severe mechanical heterogeneities across the fatigue shear bands, leading to reduced fatigue limits in the high-cycle regime. The ability to spatially quantify the localized strain gradients with submicron resolution through μXRD opens opportunities for understanding the microscopic mechanisms of damage and failure in bulk materials. PMID:29284751

Stability of the tungsten diselenide and silicon carbide heterostructure against high energy proton exposure

NASA Astrophysics Data System (ADS)

Walker, Roger C.; Shi, Tan; Jariwala, Bhakti; Jovanovic, Igor; Robinson, Joshua A.

2017-10-01

Single layers of tungsten diselenide (WSe2) can be used to construct ultra-thin, high-performance electronics. Additionally, there has been considerable progress in controlled and direct growth of single layers on various substrates. Based on these results, high-quality WSe2-based devices that approach the limit of physical thickness are now possible. Such devices could be useful for space applications, but understanding how high-energy radiation impacts the properties of WSe2 and the WSe2/substrate interface has been lacking. In this work, we compare the stability against high energy proton radiation of WSe2 and silicon carbide (SiC) heterostructures generated by mechanical exfoliation of WSe2 flakes and by direct growth of WSe2 via metal-organic chemical vapor deposition (MOCVD). These two techniques produce WSe2/SiC heterostructures with distinct differences due to interface states generated during the MOCVD growth process. This difference carries over to differences in band alignment from interface states and the ultra-thin nature of the MOCVD-grown material. Both heterostructures are not susceptible to proton-induced charging up to a dose of 1016 protons/cm2, as measured via shifts in the binding energy of core shell electrons and a decrease in the valence band offset. Furthermore, the MOCVD-grown material is less affected by the proton exposure due to its ultra-thin nature and a greater interaction with the substrate. These combined effects show that the directly grown material is suitable for multi-year use in space, provided that high quality devices can be fabricated from it.

Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

NASA Astrophysics Data System (ADS)

Huang, Shouting

Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the size of Si/Ge core-shell NWs and corresponding quantum confinement is shown to be efficient for modifying both valence and conduction band offsets simultaneously. Our proposed approaches to control band offsets in nano-sized heterojunctions may be of practical interest for nanoelectronic and photovoltaic applications. Additionally, I also studied the lattice vibrational modes of Si/Ge core-shell N-Ws. Our calculations show that the internal strain induced by the lattice mismatch between core and shell plays an important role in significantly shifting the frequency of characteristic optical modes of core-shell NWs. In particular, our simulation demonstrates that these frequency shifts can be detected by Raman-scattering experiments, giving rise to a convenient and nondestructive way to obtain structural information of core-shell materials. Meanwhile, another type of collective modes, the radial breathing modes (RBM), is identified in Si-core/Ge-shell NWs and their frequency dependence is explained by an elastic media model. Our studied vibrational modes and their frequency evolution are useful for thermoelectric applications based on core-shell nanostructures. Then I studied optical properties and exciton spectra of 2D semiconducting carbon structures. The energy spectra and wavefunctions of excitons in the 2D graphene derivatives, i.e., graphyne and graphane, are found to be strongly modified by quantum confinement, making them qualitatively different from the usual Rydberg series. However, their parity and optical selection rules are preserved. Thus a one-parameter hydrogenic model is applied to quantitatively explain the ab initio exciton spectra, and allows one to extrapolate the electron-hole binding energy from optical spectroscopies of 2D semiconductors without costly simulations. Meanwhile, our calculated optical absorption spectrum and enhanced spin singlet-triplet splitting project graphyne, an allotrope of graphene, as a good candidate for intriguing energy and biomedical applications. Lastly, we report first-principles results on electronic structures of 2D graphene-like system, i.e., silicene. For planar and simply buckled silicene structures, we confirm their zero-gap nature and show a significant renormalization of their Fermi velocity by including many-electron effects. However, the other two recently proposed silicene structures exhibit a finite band gap, indicating that they are gapped semiconductors instead of expected Dirac-fermion semimetals. This finite band gap of the latter two structures is preserved even with the Ag substrate included. The gap opening is explained by the symmetry breaking of the buckled structures. Moreover, our GW calculation reveals enhanced many-electron effects in these 2D structures. Finally the band gap of the latter two structures can be tuned in a wide range by applying strain.

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

NASA Astrophysics Data System (ADS)

Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Ooi, Boon S.

2014-11-01

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building blocks of EPIC and ICT. Alternatively, these optical sources are potential candidates for other multi-disciplinary field applications.

Thermoelectric band engineering: The role of carrier scattering

NASA Astrophysics Data System (ADS)

Witkoske, Evan; Wang, Xufeng; Lundstrom, Mark; Askarpour, Vahid; Maassen, Jesse

2017-11-01

Complex electronic band structures, with multiple valleys or bands at the same or similar energies, can be beneficial for thermoelectric performance, but the advantages can be offset by inter-valley and inter-band scattering. In this paper, we demonstrate how first-principles band structures coupled with recently developed techniques for rigorous simulation of electron-phonon scattering provide the capabilities to realistically assess the benefits and trade-offs associated with these materials. We illustrate the approach using n-type silicon as a model material and show that intervalley scattering is strong. This example shows that the convergence of valleys and bands can improve thermoelectric performance, but the magnitude of the improvement depends sensitively on the relative strengths of intra- and inter-valley electron scattering. Because anisotropy of the band structure also plays an important role, a measure of the benefit of band anisotropy in the presence of strong intervalley scattering is presented.

Band structure engineering strategies of metal oxide semiconductor nanowires and related nanostructures: A review

NASA Astrophysics Data System (ADS)

Piyadasa, Adimali; Wang, Sibo; Gao, Pu-Xian

2017-07-01

The electronic band structure of a solid state semiconductor determines many of its physical and chemical characteristics such as electrical, optical, physicochemical, and catalytic activity. Alteration or modification of the band structure could lead to significant changes in these physical and chemical characteristics, therefore we introduce new mechanisms of creating novel solid state materials with interesting properties. Over the past three decades, research on band structure engineering has allowed development of various methods to modify the band structure of engineered materials. Compared to bulk counterparts, nanostructures generally exhibit higher band structure modulation capabilities due to the quantum confinement effect, prominent surface effect, and higher strain limit. In this review we will discuss various band structure engineering strategies in semiconductor nanowires and other related nanostructures, mostly focusing on metal oxide systems. Several important strategies of band structure modulation are discussed in detail, such as doping, alloying, straining, interface and core-shell nanostructuring.

Nondestructive spectroscopic characterization of building materials

NASA Astrophysics Data System (ADS)

Kassu, Aschalew; Walker, Lauren; Sanders, Rachel; Farley, Carlton; Mills, Jonathan; Sharma, Anup

2017-04-01

The purpose of this research project is to demonstrate the application of Raman spectroscopy technique for characterization and identification of the distinct Raman signatures of construction materials. The results reported include the spectroscopic characterization of building materials using compact Raman system with 785 nm wavelength laser. The construction materials studied include polyblend sanded grout, fire barrier sealant, acrylic latex caulk plus and white silicone. It is found that, both fire barrier sealant and acrylic latex caulk plus has a prominent Raman band at 1082 cm-1, and three minor Raman signatures located at 275, 706 and 1436 cm-1. On the other hand, sand grout has three major Raman bands at 1265, 1368 and 1455 cm-1, and four minor peaks at 1573, 1683, 1762, and 1868 cm-1. White silicone, which is a widely used sealant material in construction industry, has two major Raman bands at 482 and 703 cm-1, and minor Raman characteristic bands at 783 and 1409 cm-1.

NiO: correlated band structure of a charge-transfer insulator.

PubMed

Kunes, J; Anisimov, V I; Skornyakov, S L; Lukoyanov, A V; Vollhardt, D

2007-10-12

The band structure of the prototypical charge-transfer insulator NiO is computed by using a combination of an ab initio band structure method and the dynamical mean-field theory with a quantum Monte-Carlo impurity solver. Employing a Hamiltonian which includes both Ni d and O p orbitals we find excellent agreement with the energy bands determined from angle-resolved photoemission spectroscopy. This brings an important progress in a long-standing problem of solid-state theory. Most notably we obtain the low-energy Zhang-Rice bands with strongly k-dependent orbital character discussed previously in the context of low-energy model theories.

MANUFACTURING METHODS FOR PHASE SHIFTERS.

DTIC Science & Technology

MANUFACTURING), (*PHASE SHIFT CIRCUITS, FERRITES, GARNET , DIGITAL SYSTEMS, X BAND, C BAND, S BAND, RADAR EQUIPMENT, MAGNETIC MATERIALS, YTTRIUM COMPOUNDS, GADOLINIUM COMPOUNDS, ALUMINUM COMPOUNDS, IRON COMPOUNDS, OXIDES.

Manipulation of Dirac cones in intercalated epitaxial graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Minsung; Tringides, Michael C.; Hershberger, Matthew T.

Graphene is an intriguing material in view of its unique Dirac quasi-particles, and the manipulation of its electronic structure is important in material design and applications. Here, we theoretically investigate the electronic band structure of epitaxial graphene on SiC with intercalation of rare earth metal ions (e.g., Yb and Dy) using first-principles calculations. We can use the intercalation to control the coupling of the constituent components (buffer layer, graphene, and substrate), resulting in strong modification of the graphene band structure. We also demonstrate that the metal-intercalated epitaxial graphene has tunable band structures by controlling the energies of Dirac cones asmore » well as the linear and quadratic band dispersion depending on the intercalation layer and density. Thus, the metal intercalation is a viable method to manipulate the electronic band structure of the epitaxial graphene, which can enhance the functional utility and controllability of the material.« less

Band Formation and Ocean-Surface Interaction on Europa and Ganymede

NASA Astrophysics Data System (ADS)

Howell, Samuel M.; Pappalardo, Robert T.

2018-05-01

Geologic activity in the outer H2O ice shells of Europa and Ganymede, Galilean moons of Jupiter, may facilitate material exchange between global water oceans and the icy surface, fundamentally affecting potential habitability and the future search for life. Spacecraft imagery reveals surfaces rich with tectonic bands, predominantly attributed to the extension of brittle ice overlaying a convecting ice layer. However, the details of band-forming processes and links to potential ocean-surface exchange have remained elusive. We simulate ice shell faulting and convection with two-dimensional numerical models and track the movement of "fossil" ocean material frozen into the base of the ice shell and deformed through geologic time. We find that distinct band types form within a spectrum of extensional terrains correlated to lithosphere strength, governed by lithosphere thickness and cohesion. Furthermore, we find that smooth bands formed in weak lithosphere promote exposure of fossil ocean material at the surface.

Quasiparticle band structures and interface physics of SnS and GeS

NASA Astrophysics Data System (ADS)

Malone, Brad; Kaxiras, Efthimios

2013-03-01

Orthorhombic SnS and GeS are layered materials made of earth-abundant elements which have the potential to play a useful role in the massive scale up of renewable power necessary by 2050 to avoid unmanageable levels of climate change. We report on first principles calculations of the quasiparticle spectra of these two materials, predicting the type and magnitude of the fundamental band gap, a quantity which shows a strong degree of scatter in the experimental literature. Additionally, in order to evaluate the possible role of GeS as an electron-blocking layer in a SnS-based photovoltaic device, we investigate the band offsets of the interfaces between these materials along the three principle crystallographic directions. We find that while the valence-band offsets are similar along the three principle directions, the conduction-band offsets display a substantial amount of anisotropy.

Research on the effects of geometrical and material uncertainties on the band gap of the undulated beam

NASA Astrophysics Data System (ADS)

Li, Yi; Xu, Yanlong

2017-09-01

Considering uncertain geometrical and material parameters, the lower and upper bounds of the band gap of an undulated beam with periodically arched shape are studied by the Monte Carlo Simulation (MCS) and interval analysis based on the Taylor series. Given the random variations of the overall uncertain variables, scatter plots from the MCS are used to analyze the qualitative sensitivities of the band gap respect to these uncertainties. We find that the influence of uncertainty of the geometrical parameter on the band gap of the undulated beam is stronger than that of the material parameter. And this conclusion is also proved by the interval analysis based on the Taylor series. Our methodology can give a strategy to reduce the errors between the design and practical values of the band gaps by improving the accuracy of the specially selected uncertain design variables of the periodical structures.

Manipulation of Dirac cones in intercalated epitaxial graphene

DOE PAGES

Kim, Minsung; Tringides, Michael C.; Hershberger, Matthew T.; ...

2017-07-12

Graphene is an intriguing material in view of its unique Dirac quasi-particles, and the manipulation of its electronic structure is important in material design and applications. Here, we theoretically investigate the electronic band structure of epitaxial graphene on SiC with intercalation of rare earth metal ions (e.g., Yb and Dy) using first-principles calculations. We can use the intercalation to control the coupling of the constituent components (buffer layer, graphene, and substrate), resulting in strong modification of the graphene band structure. We also demonstrate that the metal-intercalated epitaxial graphene has tunable band structures by controlling the energies of Dirac cones asmore » well as the linear and quadratic band dispersion depending on the intercalation layer and density. Thus, the metal intercalation is a viable method to manipulate the electronic band structure of the epitaxial graphene, which can enhance the functional utility and controllability of the material.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitkova, Maria; Butt, Darryl; Kozicki, Michael

For many decades, various radiation detecting material have been extensively researched, to find a better material or mechanism for radiation sensing. Recently, there is a growing need for a smaller and effective material or device that can perform similar functions of bulkier Geiger counters and other measurement options, which fail the requirement for easy, cheap and accurate radiation dose measurement. Here arises the use of thin film chalcogenide glass, which has unique properties of high thermal stability along with high sensitivity towards short wavelength radiation. The unique properties of chalcogenide glasses are attributed to the lone pair p-shell electrons, whichmore » provide some distinctive optical properties when compared to crystalline material. These qualities are derived from the energy band diagram and the presence of localized states in the band gap. Chalcogenide glasses have band tail states and localized states, along with the two band states. These extra states are primarily due to the lone pair electrons as well as the amorphous structure of the glasses. The localized states between the conductance band (CB) and valence band (VB) are primarily due to the presence of the lone pair electrons, while the band tail states are attributed to the Van der Waal's forces between layers of atoms [1]. Localized states are trap locations within the band gap where electrons from the valence band can hop into, in their path towards the conduction band. Tail states on the other hand are locations near the band gap edges and are known as Urbach tail states (Eu). These states are occupied with many electrons that can participate in the various transformations due to interaction with photons. According to Y. Utsugi et. al.[2], the electron-phonon interactions are responsible for the generation of the Urbach tails. These states are responsible for setting the absorption edge for these glasses and photons with energy near the band gap affect these states. We have studied the effect of x-rays and γ-rays, on thin film chalcogenide glasses and applied them in conjunction with film incorporating a silver source in a new type of radiation sensor for which we have an US patent application [3]. In this report, we give data about our studies regarding our designed radiation sensor along with the testing and performance at various radiation doses. These studies have been preceded by materials characterization research related to the compositional and structural characteristics of the active materials used in the radiation sensor design. During the work on the project, we collected a large volume of material since every experiment was repeated many times to verify the results. We conducted a comprehensive material research, analysis and discussion with the aim to understand the nature of the occurring effects, design different structures to harness these effects, generated models to aid in the understanding the effects, built different device structures and collected data to quantify device performance. These various aspects of our investigation have been detailed in previous quarterly reports. In this report, we present our main results and emphasize on the results pertaining to the core project goals materials development, sensor design and testing and with an emphasis on classifying the appropriate material and design for the optimal application. The report has three main parts: (i) Presentation of the main data; (ii) Bulleted summary of the most important results; (iii) List of the patent, journal publications, conference proceedings and conferences participation, occurring as a result of working on the project.« less

Understanding the interfacial properties of graphene-based materials/BiOI heterostructures by DFT calculations

NASA Astrophysics Data System (ADS)

Dai, Wen-Wu; Zhao, Zong-Yan

2017-06-01

Heterostructure constructing is a feasible and powerful strategy to enhance the performance of photocatalysts, because they can be tailored to have desirable photo-electronics properties and couple distinct advantageous of components. As a novel layered photocatalyst, the main drawback of BiOI is the low edge position of the conduction band. To address this problem, it is meaningful to find materials that possess suitable band gap, proper band edge position, and high mobility of carrier to combine with BiOI to form hetertrostructure. In this study, graphene-based materials (including: graphene, graphene oxide, and g-C3N4) were chosen as candidates to achieve this purpose. The charge transfer, interface interaction, and band offsets are focused on and analyzed in detail by DFT calculations. Results indicated that graphene-based materials and BiOI were in contact and formed van der Waals heterostructures. The valence and conduction band edge positions of graphene oxide, g-C3N4 and BiOI changed with the Fermi level and formed the standard type-II heterojunction. In addition, the overall analysis of charge density difference, Mulliken population, and band offsets indicated that the internal electric field is facilitate for the separation of photo-generated electron-hole pairs, which means these heterostructures can enhance the photocatalytic efficiency of BiOI. Thus, BiOI combines with 2D materials to construct heterostructure not only make use of the unique high electron mobility, but also can adjust the position of energy bands and promote the separation of photo-generated carriers, which provide useful hints for the applications in photocatalysis.

Topological Magnon Bands in a Kagome Lattice Ferromagnet.

PubMed

Chisnell, R; Helton, J S; Freedman, D E; Singh, D K; Bewley, R I; Nocera, D G; Lee, Y S

2015-10-02

There is great interest in finding materials possessing quasiparticles with topological properties. Such materials may have novel excitations that exist on their boundaries which are protected against disorder. We report experimental evidence that magnons in an insulating kagome ferromagnet can have a topological band structure. Our neutron scattering measurements further reveal that one of the bands is flat due to the unique geometry of the kagome lattice. Spin wave calculations show that the measured band structure follows from a simple Heisenberg Hamiltonian with a Dzyaloshinkii-Moriya interaction. This serves as the first realization of an effectively two-dimensional topological magnon insulator--a new class of magnetic material that should display both a magnon Hall effect and protected chiral edge modes.

All-optical band engineering of gapped Dirac materials

NASA Astrophysics Data System (ADS)

Kibis, O. V.; Dini, K.; Iorsh, I. V.; Shelykh, I. A.

2017-03-01

We demonstrate theoretically that the interaction of electrons in gapped Dirac materials (gapped graphene and transition-metal dichalchogenide monolayers) with a strong off-resonant electromagnetic field (dressing field) substantially renormalizes the band gaps and the spin-orbit splitting. Moreover, the renormalized electronic parameters drastically depend on the field polarization. Namely, a linearly polarized dressing field always decreases the band gap (and, particularly, can turn the gap into zero), whereas a circularly polarized field breaks the equivalence of valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. As a consequence, the dressing field can serve as an effective tool to control spin and valley properties of the materials and be potentially exploited in optoelectronic applications.

21 CFR 872.5410 - Orthodontic appliance and accessories.

Code of Federal Regulations, 2010 CFR

2010-04-01

... (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Therapeutic Devices § 872.5410 Orthodontic appliance and... device includes the preformed orthodontic band, orthodontic band material, orthodontic elastic band...

Theory of scanning tunneling spectroscopy: from Kondo impurities to heavy fermion materials

NASA Astrophysics Data System (ADS)

Morr, Dirk K.

2017-01-01

Kondo systems ranging from the single Kondo impurity to heavy fermion materials present us with a plethora of unconventional properties whose theoretical understanding is still one of the major open problems in condensed matter physics. Over the last few years, groundbreaking scanning tunneling spectroscopy (STS) experiments have provided unprecedented new insight into the electronic structure of Kondo systems. Interpreting the results of these experiments—the differential conductance and the quasi-particle interference spectrum—however, has been complicated by the fact that electrons tunneling from the STS tip into the system can tunnel either into the heavy magnetic moment or the light conduction band states. In this article, we briefly review the theoretical progress made in understanding how quantum interference between these two tunneling paths affects the experimental STS results. We show how this theoretical insight has allowed us to interpret the results of STS experiments on a series of heavy fermion materials providing detailed knowledge of their complex electronic structure. It is this knowledge that is a conditio sine qua non for developing a deeper understanding of the fascinating properties exhibited by heavy fermion materials, ranging from unconventional superconductivity to non-Fermi-liquid behavior in the vicinity of quantum critical points.

Strain fields induced by kink band propagation in Cu-Nb nanolaminate composites

DOE PAGES

Nizolek, T. J.; Begley, M. R.; McCabe, R. J.; ...

2017-07-01

Kink band formation is a common deformation mode for anisotropic materials and has been observed in polymer matrix fiber composites, single crystals, geological formations, and recently in metallic nanolaminates. While numerous studies have been devoted to kink band formation, the majority do not consider the often rapid and unstable process of kink band propagation. In this paper, we take advantage of stable kink band formation in Cu-Nb nanolaminates to quantitatively map the local strain fields surrounding a propagating kink band during uniaxial compression. Kink bands are observed to initiate at specimen edges, propagate across the sample during a rising globalmore » stress, and induce extended strain fields in the non-kinked material surrounding the propagating kink band. Finally, it is proposed that these stress/strain fields significantly contribute to the total energy dissipated during kinking and, analogous to crack tip stress/strain fields, influence the direction of kink propagation and therefore the kink band inclination angle.« less

Excitation of the Werner bands of H2 by electron impact

NASA Technical Reports Server (NTRS)

Stone, E. J.; Zipf, E. C.

1972-01-01

Absolute cross sections for the excitation of the H2 Werner band system were measured from energy threshold to 300 eV for electron impact on H2. The bands were observed in emission in the wavelength region 1100A to 1250A. The measured cross sections were compared with published transition probabilities, leading to the conclusion that the Werner bands are suitable as the basis for a relative spectral response calibration only when the bands are observed under sufficiently high resolution. The effect of the perturbation between the C 1Pi u and B 1 Sigma-u states of the hydrogen molecule was clearly observed in anomalies in the rotational intensity distribution in bands of the (3 v '') progression.

Measuring the band structures of periodic beams using the wave superposition method

NASA Astrophysics Data System (ADS)

Junyi, L.; Ruffini, V.; Balint, D.

2016-11-01

Phononic crystals and elastic metamaterials are artificially engineered periodic structures that have several interesting properties, such as negative effective stiffness in certain frequency ranges. An interesting property of phononic crystals and elastic metamaterials is the presence of band gaps, which are bands of frequencies where elastic waves cannot propagate. The presence of band gaps gives this class of materials the potential to be used as vibration isolators. In many studies, the band structures were used to evaluate the band gaps. The presence of band gaps in a finite structure is commonly validated by measuring the frequency response as there are no direct methods of measuring the band structures. In this study, an experiment was conducted to determine the band structure of one dimension phononic crystals with two wave modes, such as a bi-material beam, using the frequency response at only 6 points to validate the wave superposition method (WSM) introduced in a previous study. A bi-material beam and an aluminium beam with varying geometry were studied. The experiment was performed by hanging the beams freely, exciting one end of the beams, and measuring the acceleration at consecutive unit cells. The measured transfer function of the beams agrees with the analytical solutions but minor discrepancies. The band structure was then determined using WSM and the band structure of one set of the waves was found to agree well with the analytical solutions. The measurements taken for the other set of waves, which are the evanescent waves in the bi-material beams, were inaccurate and noisy. The transfer functions at additional points of one of the beams were calculated from the measured band structure using WSM. The calculated transfer function agrees with the measured results except at the frequencies where the band structure was inaccurate. Lastly, a study of the potential sources of errors was also conducted using finite element modelling and the errors in the dispersion curve measured from the experiments were deduced to be a result of a combination of measurement noise, the different placement of the accelerometer with finite mass, and the torsional mode.

Further improvements in program to calculate electronic properties of narrow band gap materials

NASA Technical Reports Server (NTRS)

Patterson, James D.

1991-01-01

Research into the properties of narrow band gap materials during the period 15 Jun. to 15 Dec. 1991 is discussed. Abstracts and bibliographies from papers presented during this period are reported. Graphs are provided.

Correlation effects and electronic properties of Cr-substituted SZn with an intermediate band.

PubMed

Tablero, C

2005-09-15

A study using first principles of the electronic properties of S32Zn31Cr, a material derived from the SZn host semiconductor where a Cr atom has been substituted for each of the 32 Zn atoms, is presented. This material has an intermediate band sandwiched between the valence and conduction bands of the host semiconductor, which in a formal band-theoretic picture is metallic because the Fermi energy is located within the impurity band. The potential technological application of these materials is that when they are used to absorb photons in solar cells, the efficiency increases significantly with respect to the host semiconductor. An analysis of the gaps, bandwidths, density of states, total and orbital charges, and electronic density is carried out. The main effects of the local-density approximation with a Hubbard term corrections are an increase in the bandwidth, a modification of the relative composition of the five d and p transition-metal orbitals, and a splitting of the intermediate band. The results demonstrate that the main contribution to the intermediate band is the Cr atom. For values of U greater than 6 eV, where U is the empirical Hubbard term U parameter, this band is unfolded, thus creating two bands, a full one below the Fermi energy and an empty one above it, i.e., a metal-insulator transition.

Mixed Valence Perovskite Cs2 Au2 I6 : A Potential Material for Thin-Film Pb-Free Photovoltaic Cells with Ultrahigh Efficiency.

PubMed

Debbichi, Lamjed; Lee, Songju; Cho, Hyunyoung; Rappe, Andrew M; Hong, Ki-Ha; Jang, Min Seok; Kim, Hyungjun

2018-03-01

New light is shed on the previously known perovskite material, Cs 2 Au 2 I 6 , as a potential active material for high-efficiency thin-film Pb-free photovoltaic cells. First-principles calculations demonstrate that Cs 2 Au 2 I 6 has an optimal band gap that is close to the Shockley-Queisser value. The band gap size is governed by intermediate band formation. Charge disproportionation on Au makes Cs 2 Au 2 I 6 a double-perovskite material, although it is stoichiometrically a single perovskite. In contrast to most previously discussed double perovskites, Cs 2 Au 2 I 6 has a direct-band-gap feature, and optical simulation predicts that a very thin layer of active material is sufficient to achieve a high photoconversion efficiency using a polycrystalline film layer. The already confirmed synthesizability of this material, coupled with the state-of-the-art multiscale simulations connecting from the material to the device, strongly suggests that Cs 2 Au 2 I 6 will serve as the active material in highly efficient, nontoxic, and thin-film perovskite solar cells in the very near future. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Resolution of the Band Gap Prediction Problem for Materials Design

DOE PAGES

Crowley, Jason M.; Tahir-Kheli, Jamil; Goddard, William A.

2016-03-04

An important property with any new material is the band gap. Standard density functional theory methods grossly underestimate band gaps. This is known as the band gap problem. Here in this paper, we show that the hybrid B3PW91 density functional returns band gaps with a mean absolute deviation (MAD) from experiment of 0.22 eV over 64 insulators with gaps spanning a factor of 500 from 0.014 to 7 eV. The MAD is 0.28 eV over 70 compounds with gaps up to 14.2 eV, with a mean error of -0.03 eV. To benchmark the quality of the hybrid method, we comparedmore » the hybrid method to the rigorous GW many-body perturbation theory method. Surprisingly, the MAD for B3PW91 is about 1.5 times smaller than the MAD for GW. Furthermore, B3PW91 is 3-4 orders of magnitude faster computationally. Hence, B3PW91 is a practical tool for predicting band gaps of materials before they are synthesized and represents a solution to the band gap prediction problem.« less

Fabrication and characterization of multiband solar cells based on highly mismatched alloys

NASA Astrophysics Data System (ADS)

López, N.; Braña, A. F.; García Núñez, C.; Hernández, M. J.; Cervera, M.; Martínez, M.; Yu, K. M.; Walukiewicz, W.; García, B. J.

2015-10-01

Multiband solar cells are one type of third generation photovoltaic devices in which an increase of the power conversion efficiency is achieved through the absorption of low energy photons while preserving a large band gap that determines the open circuit voltage. The ability to absorb photons from different parts of the solar spectrum originates from the presence of an intermediate energy band located within the band gap of the material. This intermediate band, acting as a stepping stone allows the absorption of low energy photons to transfer electrons from the valence band to the conduction band by a sequential two photons absorption process. It has been demonstrated that highly mismatched alloys offer a potential to be used as a model material system for practical realization of multiband solar cells. Dilute nitride GaAs1-xNx highly mismatched alloy with low mole fraction of N is a prototypical multiband semiconductor with a well-defined intermediate band. Currently, we are using chemical beam epitaxy to synthesize dilute nitride highly mismatched alloys. The materials are characterized by a variety of structural and optical methods to optimize their properties for multiband photovoltaic devices.

Energy band alignment of antiferroelectric (Pb,La)(Zr,Sn,Ti)O3

NASA Astrophysics Data System (ADS)

Klein, Andreas; Lohaus, Christian; Reiser, Patrick; Dimesso, Lucangelo; Wang, Xiucai; Yang, Tongqing

2017-06-01

The energy band alignment of antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 is studied with photoelectron spectroscopy using interfaces with high work function RuO2 and low work function Sn-doped In2O3 (ITO). It is demonstrated how spectral deconvolution can be used to determine absolute Schottky barrier heights for insulating materials with a high accuracy. Using this approach it is found that the valence band maximum energy of (Pb,La)(Zr,Sn,Ti)O3 is found to be comparable to that of Pb- and Bi-containing ferroelectric materials, which is ∼1 eV higher than that of BaTiO3. The results provide additional evidence for the occupation of the 6s orbitals as origin of the higher valence band maximum, which is directly related to the electrical properties of such compounds. The results also verify that the energy band alignment determined by photoelectron spectroscopy of as-deposited electrodes is not influenced by polarisation. The electronic structure of (Pb,La)(Zr,Sn,Ti)O3 should enable doping of the material without strongly modifying its insulating properties, which is crucial for high energy density capacitors. Moreover, the position of the energy bands should result in a great freedom of selecting electrode materials in terms of avoiding charge injection.

L-band InSAR Penetration Depth Experiment, North Slope Alaska

NASA Astrophysics Data System (ADS)

Muskett, Reginald

2017-04-01

Since the first spacecraft-based synthetic aperture radar (SAR) mission NASA's SEASAT in 1978 radars have been flown in Low Earth Orbit (LEO) by other national space agencies including the Canadian Space Agency, European Space Agency, India Space Research Organization and the Japanese Aerospace Exploration Agency. Improvements in electronics, miniaturization and production have allowed for the deployment of SAR systems on aircraft for usage in agriculture, hazards assessment, land-use management and planning, meteorology, oceanography and surveillance. LEO SAR systems still provide a range of needful and timely information on large and small-scale weather conditions like those found across the Arctic where ground-base weather radars currently provide limited coverage. For investigators of solid-earth deformation attention must be given to the atmosphere on Interferometric SAR (InSAR) by aircraft and spacecraft multi-pass operations. Because radar has the capability to penetrate earth materials at frequencies from the P- to X-band attention must be given to the frequency dependent penetration depth and volume scattering. This is the focus of our new research project: to test the penetration depth of L-band SAR/InSAR by aircraft and spacecraft systems at a test site in Arctic Alaska using multi-frequency analysis and progressive burial of radar mesh-reflectors at measured depths below tundra while monitoring environmental conditions. Knowledge of the L-band penetration depth on lowland Arctic tundra is necessary to constrain analysis of carbon mass balance and hazardous conditions arising form permafrost degradation and thaw, surface heave and subsidence and thermokarst formation at local and regional scales.

Nanoscale measurements of unoccupied band dispersion in few-layer graphene.

PubMed

Jobst, Johannes; Kautz, Jaap; Geelen, Daniël; Tromp, Rudolf M; van der Molen, Sense Jan

2015-11-26

The properties of any material are fundamentally determined by its electronic band structure. Each band represents a series of allowed states inside a material, relating electron energy and momentum. The occupied bands, that is, the filled electron states below the Fermi level, can be routinely measured. However, it is remarkably difficult to characterize the empty part of the band structure experimentally. Here, we present direct measurements of unoccupied bands of monolayer, bilayer and trilayer graphene. To obtain these, we introduce a technique based on low-energy electron microscopy. It relies on the dependence of the electron reflectivity on incidence angle and energy and has a spatial resolution ∼10 nm. The method can be easily applied to other nanomaterials such as van der Waals structures that are available in small crystals only.

Searching for an Improved Spectral Match to TES and IRIS Sinus Meridiani Spectra: Coatings and Cemented Materials

NASA Astrophysics Data System (ADS)

Kirkland, L. E.; Herr, K. C.; Adams, P. M.

2001-05-01

A region on Mars within Sinus Meridiani has been interpreted as a surface partially covered by coarse-grained (gray) hematite, using spectra measured by the 1996 Global Surveyor Thermal Emission Spectrometer (TES) [Lane et al., 1999; Christensen et al., 2000]. The band strengths recorded by TES of this region are consistent with either coarse-grained hematite, or cemented poorly crystalline or cemented fine-grained hematite. The band strengths are inconsistent with unconsolidated, poorly crystalline or fine-grained hematite, including nanophase hematite dust [Christensen et al., 2000]. Currently the gray hematite interpretation is based on bands centered near 22 and 33 microns. TES also records a band centered near 18 microns that was used in early hematite interpretations [Lane et al., 1999]. However, it was noted [Kirkland et al., 1999a] that the 18 micron band is too narrow in both TES and the 1971 Mariner Mars IRIS spectra to be a good match to typical spectra of well-crystalline hematite [e.g. Salisbury et al., 1991]. The 18 micron band is near the very strong 15 micron atmospheric CO2 band, but if anything the nearby CO2 band should cause the 18 micron band to appear wider, not narrower. In addition, the higher spectral resolution of IRIS allows improved separation of the bands [Kirkland et al., 1999b]. More recent publications no longer show the TES 18 micron band [e.g. Lane et al., 2000; Christensen et al., 2000], which temporarily resolved the issue. However, we feel it is important to understand why TES and IRIS spectra exhibit an 18 micron band that is too narrow to match typical spectra of coarse-grained hematite. Smooth-surfaced cemented (e.g. ferricrete) or coated materials (e.g. desert varnish) have spectral contrast that is consistent with the observed IRIS and TES band contrast. On Mars, one possible source for cemented material or coatings would be the nanophase hematite dust. Cemented materials may occur in bulk (e.g. duricrust or ferricrete), or as a thin coating (e.g. desert varnish). We have investigated the signatures of naturally occurring cemented materials that contain hematite, and found samples that exhibit 22 and 33 micron bands that are consistent with coarse-grained hematite signatures, and yet also exhibit narrower 18 micron bands. We are continuing to study the materials more in-depth to examine the variations in spectral shape, and to determine the cause of varied 18 micron band width. References. Christensen, P. R. et al., JGR 105, 9632, 2000. Kirkland, L., K. Herr, P. Forney, and J. Salisbury, LPSC XXX, abs. 1693 and oral presentation, 1999a. Kirkland, L., K. Herr, and P. Forney, 5th Internat'l Conf. on Mars, abs. 6174, 1999b. Lane, M., R. Morris, and P. Christensen, LPSC XXX, abs. 1469, 1999. Lane, M., R. Morris, and P. Christensen, LPSC XXXI, abs. 1140, 2000. Salisbury, J., L. Walter, N. Vergo, D. D'Aria, Infrared (2.1-25 micron) Spectra of Minerals, Johns Hopkins UP, 1991.

"Fullerene-like" Raman bands in UHP metamorphic diamonds: Metastable intermediate phases for diamond formation

NASA Astrophysics Data System (ADS)

Harada, Y.; Igarashi, M.; Hashiguchi, Y.; Ogasawara, Y.

2011-12-01

Mysterious Raman bands at 1430-1480 cm-1 suggesting carbon (or carbon-bearing) species have been discovered in UHP metamorphic microdiamonds entirely enclosed in dolomite marble from Kokchetav Massif (Igarashi et al., 2011). Such Raman bands first discovered at some domains in a T-type (see Ishida et al., 2003) diamond in dolomite marble in 2005, but we have not reported this because of the possibility of misidentification by contamination. Later, similar bands were also found in the rim and the core of S-type and R-type. The relative intensities of these Raman bands to diamond (at 1332 cm-1) were 10-40 % in average (max. 90-110 %) and FWHMs are broad (25-45 cm-1). The possibility of the appearance of these Raman bands was low. As we used ordinary polished thin sections (thickness: 25 μm) and the organic materials used in thin section making have Raman bands at ca. 1450 cm-1, we carefully examined observed Raman spectra and the positions of the source materials of these bands to exclude the possibility of contaminations. Examined microdiamond grains are entirely enclosed in the host garnet, and no crack was observed in the host. We conducted 2D Raman mappings at different depths with 2 μm intervals. The result showed that the domains having these Raman bands were located within diamond grains and limited area (1-3 μm). These bands were never detected from outside diamond grains (e.g., host garnet). Thus, the unknown Raman bands at 1430-1480 cm-1 were attributed to some materials inside microdiamonds entirely included in the host garnet. The possibility of contamination was denied. Recently, we found similar Raman bands in the microdiamonds in garnet in Grt-Bt gneiss. Examined microdiamonds are entirely enclosed in garnet grain and no extra phase observed near laser spots in these microdiamond grains under an optical microscope. The Raman bands at 1430-1480 cm-1 were found from 4 microdiamond grains. The peak positions and FWHMs of these bands were as follows: (a) 1433, 31 (b) 1456, 35 (b) 1458, 41 (c) 1461, 31 (e) 1462 cm-1, 44 cm-1. Their intensities to the host diamond were 10-20 % in average. The mappings at different depths also showed very limited source space inside microdiamond grains. Although it is difficult to identify the source materials only by Raman spectroscopy, we considered that the Raman bands could be attributed to some carbon or carbon-bearing species which were relicts as metastable intermediate phases for microdiamond formation under UHP. Fullerenes are speculated as possible carbon materials for those bands. The band at 1470 cm-1 is similar to Ag (2) band of C60 fullerene. The large FWHM and the variation of peak positions at 1430-1480 cm-1 may be caused by aggregations of several species of fullerenes. If our speculation is correct, metamorphic diamond could have the possibility of preservation of intermediate carbon phases in diamond because the duration for diamond growth was much shorter than kimberlitic diamonds. We should pay attentions to such extra materials inside diamonds in order to clarify the real image of the diamond formation.

Correlation and nuclear distortion effects of Cr-substituted ZnSe.

PubMed

Tablero, C

2007-04-28

There is a great deal of interest in the effect of the correlation and effect of the atomic distortion in materials with a metallic intermediate band. This band, situated within the semiconductor band gaps, would be split, thus creating two bands, a full one below the Fermi energy and an empty one above it, i.e., a metal-insulator transition. This basic electronic band structure corresponds to intermediate band materials and is characteristic of transparent-conducting oxides, up and down converters, and intermediate band solar cells. A sufficiently high density of Cr in ZnSe substituting the Zn atoms leads to a microscopic intermediate band, in which these effects will be analyzed. A Hubbard term has been included to improve the description of the many-body effect. This term modifies the bandwidth of the intermediate band, the Fermi energy, and breaks the orbital-occupation degeneracy. From the results, the intermediate band is not split within the range of Hubbard term values analyzed and for Cr substituting Zn from 0.463% to 3.125% of Cr atomic concentration.

Quantitative image analysis for investigating cell-matrix interactions

NASA Astrophysics Data System (ADS)

Burkel, Brian; Notbohm, Jacob

2017-07-01

The extracellular matrix provides both chemical and physical cues that control cellular processes such as migration, division, differentiation, and cancer progression. Cells can mechanically alter the matrix by applying forces that result in matrix displacements, which in turn may localize to form dense bands along which cells may migrate. To quantify the displacements, we use confocal microscopy and fluorescent labeling to acquire high-contrast images of the fibrous material. Using a technique for quantitative image analysis called digital volume correlation, we then compute the matrix displacements. Our experimental technology offers a means to quantify matrix mechanics and cell-matrix interactions. We are now using these experimental tools to modulate mechanical properties of the matrix to study cell contraction and migration.

A review of the growth, doping, and applications of β-Ga2O3 thin films

NASA Astrophysics Data System (ADS)

Razeghi, Manijeh; Park, Ji-Hyeon; McClintock, Ryan; Pavlidis, Dimitris; Teherani, Ferechteh H.; Rogers, David J.; Magill, Brenden A.; Khodaparast, Giti A.; Xu, Yaobin; Wu, Jinsong; Dravid, Vinayak P.

2018-03-01

β-Ga2O3 is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg 4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga2O3 thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga2O3 devices to penetrate the market in real-world applications are also considered, along with paths for future work.

Nutrient enrichment enhances black band disease progression in corals

NASA Astrophysics Data System (ADS)

Voss, Joshua D.; Richardson, Laurie L.

2006-11-01

Infectious diseases are recognized as significant contributors to the dramatic loss of corals observed worldwide. However, the causes of increased coral disease prevalence and severity are not well understood. One potential factor is elevated nutrient concentration related to localized anthropogenic activities such as inadequate waste water treatment or terrestrial runoff. In this study the effect of nutrient enrichment on the progression of black band disease (BBD) was investigated using both in situ and laboratory experiments. Experimental increases in localized nutrient availability using commercial time release fertilizer in situ resulted in doubling of BBD progression and coral tissue loss in the common reef framework coral Siderastrea siderea. Laboratory experiments in which artificially infected S. siderea colonies were exposed to increased nitrate concentrations (up to 3 μM) demonstrated similar increases in BBD progression. These findings provide evidence that the impacts of this disease on coral populations are exacerbated by nutrient enrichment and that management to curtail excess nutrient loading may be important for reducing coral cover loss due to BBD.

Electronic properties of hexagonal gallium phosphide: A DFT investigation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Vipin; Shah, Esha V.; Roy, Debesh R., E-mail: drr@ashd.svnit.ac.in

2016-05-23

A detail density functional investigation is performed to develop hexagonal 2D gallium phosphide material. The geometry, band structure and density of states (total and projected) of 2D hexagonal GaP are reported in detail. It is heartening to note that the developed material is identified as an indirect band gap semiconductor. The indirect gap for this material is predicted as 1.97 eV at K-Γ, and a direct gap of 2.28 eV at K point is achieved, which is very close to the reported direct band gap for zinc blende and buckled structures of GaP.

X-band noise temperature effects of rain on DSN antenna feedhorns

NASA Technical Reports Server (NTRS)

Slobin, S. D.; Franco, M. M.; Clauss, R. C.

1982-01-01

Simulated rain tests were carried out to determine the noise temperature contribution of liquid water adhering to the aperture cover material on both a standard DSN X-band feedhorn and on an S/X-band common aperture feedhorn. It was found that for the particular common aperture feedhorn tested, system noise temperature increases were much greater when the plastic horn cover material was old and weathered than when it was new. The age and condition of the aperture cover material is believed to be a major factor in the amount of degradation experienced by a telecommunications system during rain events.

Ultra-Wideband Optical Modulation Spectrometer (OMS) Development: Study of the Optical Setup of a Wide-Band Optical Modulation Spectrometer

NASA Technical Reports Server (NTRS)

Tolls, Volker; Stringfellow, Guy (Technical Monitor)

2001-01-01

The purpose of this study is to advance the design of the optical setup for a wide-band Optical Modulation Spectrometer (OMS) for use with astronomical heterodyne receiver systems. This report describes the progress of this investigation achieved from March until December 2001.

Formation of Bragg band gaps in anisotropic phononic crystals analyzed with the empty lattice model

DOE PAGES

Wang, Yan -Feng; Maznev, Alexei; Laude, Vincent

2016-05-11

Bragg band gaps of phononic crystals generally, but not always, open at Brillouin zone boundaries. The commonly accepted explanation stems from the empty lattice model: assuming a small material contrast between the constituents of the unit cell, avoided crossings in the phononic band structure appear at frequencies and wavenumbers corresponding to band intersections; for scalar waves the lowest intersections coincide with boundaries of the first Brillouin zone. However, if a phononic crystal contains elastically anisotropic materials, its overall symmetry is not dictated solely by the lattice symmetry. We construct an empty lattice model for phononic crystals made of isotropic andmore » anisotropic materials, based on their slowness curves. We find that, in the anisotropic case, avoided crossings generally do not appear at the boundaries of traditionally defined Brillouin zones. Furthermore, the Bragg "planes" which give rise to phononic band gaps, are generally not flat planes but curved surfaces. Lastly, the same is found to be the case for avoided crossings between shear (transverse) and longitudinal bands in the isotropic case.« less

Formation of Bragg band gaps in anisotropic phononic crystals analyzed with the empty lattice model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yan -Feng; Maznev, Alexei; Laude, Vincent

Bragg band gaps of phononic crystals generally, but not always, open at Brillouin zone boundaries. The commonly accepted explanation stems from the empty lattice model: assuming a small material contrast between the constituents of the unit cell, avoided crossings in the phononic band structure appear at frequencies and wavenumbers corresponding to band intersections; for scalar waves the lowest intersections coincide with boundaries of the first Brillouin zone. However, if a phononic crystal contains elastically anisotropic materials, its overall symmetry is not dictated solely by the lattice symmetry. We construct an empty lattice model for phononic crystals made of isotropic andmore » anisotropic materials, based on their slowness curves. We find that, in the anisotropic case, avoided crossings generally do not appear at the boundaries of traditionally defined Brillouin zones. Furthermore, the Bragg "planes" which give rise to phononic band gaps, are generally not flat planes but curved surfaces. Lastly, the same is found to be the case for avoided crossings between shear (transverse) and longitudinal bands in the isotropic case.« less

Geologic mapping of Europa

USGS Publications Warehouse

Greeley, R.; Figueredo, P.H.; Williams, D.A.; Chuang, F.C.; Klemaszewski, J.E.; Kadel, S.D.; Prockter, L.M.; Pappalardo, R.T.; Head, J. W.; Collins, G.C.; Spaun, N.A.; Sullivan, R.J.; Moore, Johnnie N.; Senske, D.A.; Tufts, B.R.; Johnson, T.V.; Belton, M.J.S.; Tanaka, K.L.

2000-01-01

Galileo data enable the major geological units, structures, and surface features to be identified on Europa. These include five primary units (plains, chaos, band, ridge, and crater materials) and their subunits, along with various tectonic structures such as faults. Plains units are the most widespread. Ridged plains material spans a wide range of geological ages, including the oldest recognizable features on Europa, and appears to represent a style of tectonic resurfacing, rather than cryovolcanism. Smooth plains material typically embays other terrains and units, possibly as a type of fluid emplacement, and is among the youngest material units observed. At global scales, plains are typically mapped as undifferentiated plains material, although in some areas differences can be discerned in the near infrared which might be related to differences in ice grain size. Chaos material is composed of plains and other preexisting materials that have been severely disrupted by inferred internal activity; chaos is characterized by blocks of icy material set in a hummocky matrix. Band material is arrayed in linear, curvilinear, wedge-shaped, or cuspate zones with contrasting albedo and surface textures with respect to the surrounding terrain. Bilateral symmetry observed in some bands and the relationships with the surrounding units suggest that band material forms by the lithosphere fracturing, spreading apart, and infilling with material derived from the subsurface. Ridge material is mapped as a unit on local and some regional maps but shown with symbols at global scales. Ridge material includes single ridges, doublet ridges, and ridge complexes. Ridge materials are considered to represent tectonic processes, possibly accompanied by the extrusion or intrusion of subsurface materials, such as diapirs. The tectonic processes might be related to tidal flexing of the icy lithosphere on diurnal or longer timescales. Crater materials include various interior (smooth central, rough inner, and annular massif) and exterior (continuous ejecta) subunits. Structural features and landforms are shown with conventional symbols. Type localities for the units are identified, along with suggestions for portraying the features on geological maps, including colors and letter abbreviations for material units. Implementing these suggestions by the planetary mapping community would facilitate comparisons of maps for different parts of Europa and contribute to an eventual global synthesis of its complex geology. On the basis of initial mapping results, a stratigraphic sequence is suggested in which ridged plains form the oldest unit on Europa, followed by development of band material and individual ridges. Band materials tend to be somewhat older than ridges, but in many areas the two units formed simultaneously. Similarly, the formation of most chaos follows the development of ridged plains; although chaos is among the youngest materials on Europa, some chaos units might have formed contemporaneously with ridged plains. Smooth plains generally embay all other units and are late-stage in the evolution of the surface. C1 craters are superposed on ridged plains but are crosscut by other materials, including bands and ridges. Most c2 craters postdate all other units, but a few c2 craters are cut by ridge material. C3 craters constitute the youngest recognizable material on Europa. Copyright 2000 by the American Geophysical Union.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kao, Kuo-Hsing; Meyer, Kristin De; Department of Electrical Engineering, KU Leuven, Leuven

Band-to-band tunneling parameters of strained indirect bandgap materials are not well-known, hampering the reliability of performance predictions of tunneling devices based on these materials. The nonlocal band-to-band tunneling model for compressively strained SiGe is calibrated based on a comparison of strained SiGe p-i-n tunneling diode measurements and doping-profile-based diode simulations. Dopant and Ge profiles of the diodes are determined by secondary ion mass spectrometry and capacitance-voltage measurements. Theoretical parameters of the band-to-band tunneling model are calculated based on strain-dependent properties such as bandgap, phonon energy, deformation-potential-based electron-phonon coupling, and hole effective masses of strained SiGe. The latter is determined withmore » a 6-band k·p model. The calibration indicates an underestimation of the theoretical electron-phonon coupling with nearly an order of magnitude. Prospects of compressively strained SiGe tunneling transistors are made by simulations with the calibrated model.« less

Characterization of Mineralogy Across Vesta

NASA Technical Reports Server (NTRS)

De Sanctis, M. C.; Ammannito, E.; Capria, M. T.; Capaccioni, F.; Carraro, F.; Fonte, S.; Frigeri, A.; Magni, G.; Marchi, S.; Palomba, E.;

Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species.

PubMed

Saleh, Navid B; Milliron, Delia J; Aich, Nirupam; Katz, Lynn E; Liljestrand, Howard M; Kirisits, Mary Jo

2016-10-15

Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. Copyright © 2016 Elsevier B.V. All rights reserved.

Progressive sample processing of band selection for hyperspectral imagery

NASA Astrophysics Data System (ADS)

Liu, Keng-Hao; Chien, Hung-Chang; Chen, Shih-Yu

2017-10-01

Band selection (BS) is one of the most important topics in hyperspectral image (HSI) processing. The objective of BS is to find a set of representative bands that can represent the whole image with lower inter-band redundancy. Many types of BS algorithms were proposed in the past. However, most of them can be carried on in an off-line manner. It means that they can only be implemented on the pre-collected data. Those off-line based methods are sometime useless for those applications that are timeliness, particular in disaster prevention and target detection. To tackle this issue, a new concept, called progressive sample processing (PSP), was proposed recently. The PSP is an "on-line" framework where the specific type of algorithm can process the currently collected data during the data transmission under band-interleavedby-sample/pixel (BIS/BIP) protocol. This paper proposes an online BS method that integrates a sparse-based BS into PSP framework, called PSP-BS. In PSP-BS, the BS can be carried out by updating BS result recursively pixel by pixel in the same way that a Kalman filter does for updating data information in a recursive fashion. The sparse regression is solved by orthogonal matching pursuit (OMP) algorithm, and the recursive equations of PSP-BS are derived by using matrix decomposition. The experiments conducted on a real hyperspectral image show that the PSP-BS can progressively output the BS status with very low computing time. The convergence of BS results during the transmission can be quickly achieved by using a rearranged pixel transmission sequence. This significant advantage allows BS to be implemented in a real time manner when the HSI data is transmitted pixel by pixel.

Study and analysis of filtering characteristics of 1D photonic crystal

NASA Astrophysics Data System (ADS)

Juyal, Rohan; Suthar, Bhuvneshwer; Kumar, Arun

2018-05-01

Propagation of electromagnetic wave have been studied and analyzed through 1D photonic crystal. 1D photonic band gap material with low and high refractive index material has been chosen for this study. Band structure and reflectivity of this 1D structure has been calculated using transmission matrix method (TMM). Study and analysis of the band structure and reflectivity of this structure shows that this structure may work as an optical filter.

High-power klystrons

NASA Astrophysics Data System (ADS)

Siambis, John G.; True, Richard B.; Symons, R. S.

1994-05-01

Novel emerging applications in advanced linear collider accelerators, ionospheric and atmospheric sensing and modification and a wide spectrum of industrial processing applications, have resulted in microwave tube requirements that call for further development of high power klystrons in the range from S-band to X-band. In the present paper we review recent progress in high power klystron development and discuss some of the issues and scaling laws for successful design. We also discuss recent progress in electron guns with potential grading electrodes for high voltage with short and long pulse operation via computer simulations obtained from the code DEMEOS, as well as preliminary experimental results. We present designs for high power beam collectors.

Indentation-Induced Shear Band Formation in Thin-Film Multilayers

NASA Astrophysics Data System (ADS)

Bigelow, Shannon; Shen, Yu-Lin

2017-08-01

We report an exploratory investigation into the cause of shear band formation in multilayer thin-films subject to nanoindentation. The material system considered here is composed of alternating aluminum (Al) and silicon carbide (SiC) nanolayers, atop a silicon (Si) substrate. Finite element models are developed in an attempt to reproduce the shear banding phenomenon observed experimentally. By introducing strain softening into the material model for the hard SiC layers, shear bands can be seen to emerge from the indentation site in the finite element analysis. Broad implications, along with possible directions for future work, are discussed.

Alkali-metal induced band structure deformation investigated by angle-resolved photoemission spectroscopy and first-principles calculations

NASA Astrophysics Data System (ADS)

Ito, S.; Feng, B.; Arita, M.; Someya, T.; Chen, W.-C.; Takayama, A.; Iimori, T.; Namatame, H.; Taniguchi, M.; Cheng, C.-M.; Tang, S.-J.; Komori, F.; Matsuda, I.

2018-04-01

Alkali-metal adsorption on the surface of materials is widely used for in situ surface electron doping, particularly for observing unoccupied band structures by angle-resolved photoemission spectroscopy (ARPES). However, the effects of alkali-metal atoms on the resulting band structures have yet to be fully investigated, owing to difficulties in both experiments and calculations. Here, we combine ARPES measurements on cesium-adsorbed ultrathin bismuth films with first-principles calculations of the electronic charge densities and demonstrate a simple method to evaluate alkali-metal induced band deformation. We reveal that deformation of bismuth surface bands is directly correlated with vertical charge-density profiles at each electronic state of bismuth. In contrast, a change in the quantized bulk bands is well described by a conventional rigid-band-shift picture. We discuss these two aspects of the band deformation holistically, considering spatial distributions of the electronic states and cesium-bismuth hybridization, and provide a prescription for applying alkali-metal adsorption to a wide range of materials.

A Unifying Perspective on Oxygen Vacancies in Wide Band Gap Oxides.

PubMed

Linderälv, Christopher; Lindman, Anders; Erhart, Paul

2018-01-04

Wide band gap oxides are versatile materials with numerous applications in research and technology. Many properties of these materials are intimately related to defects, with the most important defect being the oxygen vacancy. Here, using electronic structure calculations, we show that the charge transition level (CTL) and eigenstates associated with oxygen vacancies, which to a large extent determine their electronic properties, are confined to a rather narrow energy range, even while band gap and the electronic structure of the conduction band vary substantially. Vacancies are classified according to their character (deep versus shallow), which shows that the alignment of electronic eigenenergies and CTL can be understood in terms of the transition between cavity-like localized levels in the large band gap limit and strong coupling between conduction band and vacancy states for small to medium band gaps. We consider both conventional and hybrid functionals and demonstrate that the former yields results in very good agreement with the latter provided that band edge alignment is taken into account.

Application of 2D Non-Graphene Materials and 2D Oxide Nanostructures for Biosensing Technology

PubMed Central

Shavanova, Kateryna; Bakakina, Yulia; Burkova, Inna; Shtepliuk, Ivan; Viter, Roman; Ubelis, Arnolds; Beni, Valerio; Starodub, Nickolaj; Yakimova, Rositsa; Khranovskyy, Volodymyr

2016-01-01

The discovery of graphene and its unique properties has inspired researchers to try to invent other two-dimensional (2D) materials. After considerable research effort, a distinct “beyond graphene” domain has been established, comprising the library of non-graphene 2D materials. It is significant that some 2D non-graphene materials possess solid advantages over their predecessor, such as having a direct band gap, and therefore are highly promising for a number of applications. These applications are not limited to nano- and opto-electronics, but have a strong potential in biosensing technologies, as one example. However, since most of the 2D non-graphene materials have been newly discovered, most of the research efforts are concentrated on material synthesis and the investigation of the properties of the material. Applications of 2D non-graphene materials are still at the embryonic stage, and the integration of 2D non-graphene materials into devices is scarcely reported. However, in recent years, numerous reports have blossomed about 2D material-based biosensors, evidencing the growing potential of 2D non-graphene materials for biosensing applications. This review highlights the recent progress in research on the potential of using 2D non-graphene materials and similar oxide nanostructures for different types of biosensors (optical and electrochemical). A wide range of biological targets, such as glucose, dopamine, cortisol, DNA, IgG, bisphenol, ascorbic acid, cytochrome and estradiol, has been reported to be successfully detected by biosensors with transducers made of 2D non-graphene materials. PMID:26861346

Application of 2D Non-Graphene Materials and 2D Oxide Nanostructures for Biosensing Technology.

PubMed

Shavanova, Kateryna; Bakakina, Yulia; Burkova, Inna; Shtepliuk, Ivan; Viter, Roman; Ubelis, Arnolds; Beni, Valerio; Starodub, Nickolaj; Yakimova, Rositsa; Khranovskyy, Volodymyr

2016-02-06

The discovery of graphene and its unique properties has inspired researchers to try to invent other two-dimensional (2D) materials. After considerable research effort, a distinct "beyond graphene" domain has been established, comprising the library of non-graphene 2D materials. It is significant that some 2D non-graphene materials possess solid advantages over their predecessor, such as having a direct band gap, and therefore are highly promising for a number of applications. These applications are not limited to nano- and opto-electronics, but have a strong potential in biosensing technologies, as one example. However, since most of the 2D non-graphene materials have been newly discovered, most of the research efforts are concentrated on material synthesis and the investigation of the properties of the material. Applications of 2D non-graphene materials are still at the embryonic stage, and the integration of 2D non-graphene materials into devices is scarcely reported. However, in recent years, numerous reports have blossomed about 2D material-based biosensors, evidencing the growing potential of 2D non-graphene materials for biosensing applications. This review highlights the recent progress in research on the potential of using 2D non-graphene materials and similar oxide nanostructures for different types of biosensors (optical and electrochemical). A wide range of biological targets, such as glucose, dopamine, cortisol, DNA, IgG, bisphenol, ascorbic acid, cytochrome and estradiol, has been reported to be successfully detected by biosensors with transducers made of 2D non-graphene materials.

Band structure and thermoelectric properties of half-Heusler semiconductors from many-body perturbation theory

NASA Astrophysics Data System (ADS)

Zahedifar, Maedeh; Kratzer, Peter

2018-01-01

Various ab initio approaches to the band structure of A NiSn and A CoSb half-Heusler compounds (A = Ti, Zr, Hf) are compared and their consequences for the prediction of thermoelectric properties are explored. Density functional theory with the generalized-gradient approximation (GGA), as well as the hybrid density functional HSE06 and ab initio many-body perturbation theory in the form of the G W0 approach, are employed. The G W0 calculations confirm the trend of a smaller band gap (0.75 to 1.05 eV) in A NiSn compared to the A CoSb compounds (1.13 to 1.44 eV) already expected from the GGA calculations. While in A NiSn materials the G W0 band gap is 20% to 50% larger than in HSE06, the fundamental gap of A CoSb materials is smaller in G W0 compared to HSE06. This is because G W0 , similar to PBE, locates the valence band maximum at the L point of the Brillouin zone, whereas it is at the Γ point in the HSE06 calculations. The differences are attributed to the observation that the relative positions of the d levels of the transition metal atoms vary among the different methods. Using the calculated band structures and scattering rates taking into account the band effective masses at the extrema, the Seebeck coefficients, thermoelectric power factors, and figures of merit Z T are predicted for all six half-Heusler compounds. Comparable performance is predicted for the n -type A NiSn materials, whereas clear differences are found for the p -type A CoSb materials. Using the most reliable G W0 electronic structure, ZrCoSb is predicted to be the most efficient material with a power factor of up to 0.07 W/(K2 m) at a temperature of 600 K. We find strong variations among the different ab initio methods not only in the prediction of the maximum power factor and Z T value of a given material, but also in comparing different materials to each other, in particular in the p -type thermoelectric materials. Thus we conclude that the most elaborate, but also most costly G W0 method is required to perform a reliable computational search for the optimum material.

Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion

NASA Astrophysics Data System (ADS)

Ochi, Masayuki; Usui, Hidetomo; Kuroki, Kazuhiko

2017-12-01

Thermoelectric power generation has been recognized as one of the most important technologies, and high-performance thermoelectric materials have long been pursued. However, because of the large number of candidate materials, this quest is extremely challenging, and it has become clear that a firm theoretical concept from the viewpoint of band-structure engineering is needed. We theoretically demonstrate that pnictogen dichalcogenide layered compounds, which originally attracted attention as a family of superconductors and have recently been investigated as thermoelectric materials, can exhibit very high thermoelectric performance with elemental substitution. Specifically, we clarify a promising guiding principle for material design and find that LaOAsSe2, a material that has yet to be synthesized, has a power factor that is 6 times as large as that of the known compound LaOBiS2 and can exhibit a very large Z T under some plausible assumptions. This large enhancement of the thermoelectric performance originates from the quasi-one-dimensional gapped Dirac-like band dispersion, which is realized by the square-lattice network. We offer one ideal limit of the band structure for thermoelectric materials. Because our target materials have high controllability of constituent elements and feasibility of carrier doping, experimental studies along this line are eagerly awaited.

High throughput light absorber discovery, Part 2: Establishing structure–band gap energy relationships

DOE PAGES

Suram, Santosh K.; Newhouse, Paul F.; Zhou, Lan; ...

2016-09-23

Combinatorial materials science strategies have accelerated materials development in a variety of fields, and we extend these strategies to enable structure-property mapping for light absorber materials, particularly in high order composition spaces. High throughput optical spectroscopy and synchrotron X-ray diffraction are combined to identify the optical properties of Bi-V-Fe oxides, leading to the identification of Bi 4V 1.5Fe 0.5O 10.5 as a light absorber with direct band gap near 2.7 eV. Here, the strategic combination of experimental and data analysis techniques includes automated Tauc analysis to estimate band gap energies from the high throughput spectroscopy data, providing an automated platformmore » for identifying new optical materials.« less

High throughput light absorber discovery, Part 2: Establishing structure–band gap energy relationships

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suram, Santosh K.; Newhouse, Paul F.; Zhou, Lan

Combinatorial materials science strategies have accelerated materials development in a variety of fields, and we extend these strategies to enable structure-property mapping for light absorber materials, particularly in high order composition spaces. High throughput optical spectroscopy and synchrotron X-ray diffraction are combined to identify the optical properties of Bi-V-Fe oxides, leading to the identification of Bi 4V 1.5Fe 0.5O 10.5 as a light absorber with direct band gap near 2.7 eV. Here, the strategic combination of experimental and data analysis techniques includes automated Tauc analysis to estimate band gap energies from the high throughput spectroscopy data, providing an automated platformmore » for identifying new optical materials.« less

Three-dimensional organic Dirac-line materials due to nonsymmorphic symmetry: A data mining approach

NASA Astrophysics Data System (ADS)

Geilhufe, R. Matthias; Bouhon, Adrien; Borysov, Stanislav S.; Balatsky, Alexander V.

2017-01-01

A data mining study of electronic Kohn-Sham band structures was performed to identify Dirac materials within the Organic Materials Database. Out of that, the three-dimensional organic crystal 5,6-bis(trifluoromethyl)-2-methoxy-1 H -1,3-diazepine was found to host different Dirac-line nodes within the band structure. From a group theoretical analysis, it is possible to distinguish between Dirac-line nodes occurring due to twofold degenerate energy levels protected by the monoclinic crystalline symmetry and twofold degenerate accidental crossings protected by the topology of the electronic band structure. The obtained results can be generalized to all materials having the space group P 21/c (No. 14, C2h 5) by introducing three distinct topological classes.

High Throughput Light Absorber Discovery, Part 2: Establishing Structure-Band Gap Energy Relationships.

PubMed

Suram, Santosh K; Newhouse, Paul F; Zhou, Lan; Van Campen, Douglas G; Mehta, Apurva; Gregoire, John M

2016-11-14

Combinatorial materials science strategies have accelerated materials development in a variety of fields, and we extend these strategies to enable structure-property mapping for light absorber materials, particularly in high order composition spaces. High throughput optical spectroscopy and synchrotron X-ray diffraction are combined to identify the optical properties of Bi-V-Fe oxides, leading to the identification of Bi 4 V 1.5 Fe 0.5 O 10.5 as a light absorber with direct band gap near 2.7 eV. The strategic combination of experimental and data analysis techniques includes automated Tauc analysis to estimate band gap energies from the high throughput spectroscopy data, providing an automated platform for identifying new optical materials.

Charge transport in organic semiconductors.

PubMed

Bässler, Heinz; Köhler, Anna

2012-01-01

Modern optoelectronic devices, such as light-emitting diodes, field-effect transistors and organic solar cells require well controlled motion of charges for their efficient operation. The understanding of the processes that determine charge transport is therefore of paramount importance for designing materials with improved structure-property relationships. Before discussing different regimes of charge transport in organic semiconductors, we present a brief introduction into the conceptual framework in which we interpret the relevant photophysical processes. That is, we compare a molecular picture of electronic excitations against the Su-Schrieffer-Heeger semiconductor band model. After a brief description of experimental techniques needed to measure charge mobilities, we then elaborate on the parameters controlling charge transport in technologically relevant materials. Thus, we consider the influences of electronic coupling between molecular units, disorder, polaronic effects and space charge. A particular focus is given to the recent progress made in understanding charge transport on short time scales and short length scales. The mechanism for charge injection is briefly addressed towards the end of this chapter.

Boron Nitride Nanotubes for Engineering Applications

NASA Technical Reports Server (NTRS)

Hurst, Janet; Hull, David; Gorican, Daniel

2005-01-01

Boron nitride nanotubes (BNNT) are of significant interest to the scientific and technical communities for many of the same reasons that carbon nanotubes (CNT) have attracted wide attention. Both materials have potentially unique and important properties for structural and electronic applications. However of even more consequence than their similarities may be the complementary differences between carbon and boron nitride nanotubes While BNNT possess a very high modulus similar to CNT, they also possess superior chemical and thermal stability. Additionally, BNNT have more uniform electronic properties, with a uniform band gap of 5.5 eV while CNT vary from semi-conductive to highly conductive behavior. Boron nitride nanotubes have been synthesized both in the literature and at NASA Glenn Research Center, by a variety of methods such as chemical vapor deposition, arc discharge and reactive milling. Consistent large scale production of a reliable product has proven difficult. Progress in the reproducible synthesis of 1-2 gram sized batches of boron nitride nanotubes will be discussed as well as potential uses for this unique material.

Synthesis of Boron Nitride Nanotubes for Engineering Applications

NASA Technical Reports Server (NTRS)

Hurst, Janet; Hull, David; Gorican, Dan

2005-01-01

Boron Nitride nanotubes (BNNT) are of interest to the scientific and technical communities for many of the same reasons that carbon nanotubes (CNT) have attracted large amounts of attention. Both materials have potentially unique and significant properties which may have important structural and electronic applications in the future. However of even more interest than their similarities may be the differences between carbon and boron nanotubes. Whilt boron nitride nanotubes possess a very high modulus similaar to CNT, they are also more chemically and thermally inert. Additionally BNNT possess more uniform electronic properties, having a uniform band gap of approximately 5.5 eV while CNT vary from semi-conductin to conductor behavior. Boron Nitride nanotubes have been synthesized by a variety of methods such as chemical vapor deposition, arc discharge and reactive milling. Consistently producing a reliable product has proven difficult. Progress in synthesis of 1-2 gram sized batches of Boron Nitride nanotubes will be discussed as well as potential uses for this unique material.

Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions.

PubMed

Barrett, N; Gottlob, D M; Mathieu, C; Lubin, C; Passicousset, J; Renault, O; Martinez, E

2016-05-01

Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

Field induced gap infrared detector

NASA Technical Reports Server (NTRS)

Elliott, C. Thomas (Inventor)

1990-01-01

A tunable infrared detector which employs a vanishing band gap semimetal material provided with an induced band gap by a magnetic field to allow intrinsic semiconductor type infrared detection capabilities is disclosed. The semimetal material may thus operate as a semiconductor type detector with a wavelength sensitivity corresponding to the induced band gap in a preferred embodiment of a diode structure. Preferred semimetal materials include Hg(1-x)Cd(x)Te, x is less than 0.15, HgCdSe, BiSb, alpha-Sn, HgMgTe, HgMnTe, HgZnTe, HgMnSe, HgMgSe, and HgZnSe. The magnetic field induces a band gap in the semimetal material proportional to the strength of the magnetic field allowing tunable detection cutoff wavelengths. For an applied magnetic field from 5 to 10 tesla, the wavelength detection cutoff will be in the range of 20 to 50 micrometers for Hg(1-x)Cd(x)Te alloys with x about 0.15. A similar approach may also be employed to generate infrared energy in a desired band gap and then operating the structure in a light emitting diode or semiconductor laser type of configuration.

Analysis of SnS2 hyperdoped with V proposed as efficient absorber material.

PubMed

Seminovski, Yohanna; Palacios, Pablo; Wahnón, Perla

2014-10-01

Intermediate-band materials can improve the photovoltaic efficiency of solar cells through the absorption of two subband-gap photons that allow extra electron-hole pair formations. Previous theoretical and experimental findings support the proposal that the layered SnS2 compound, with a band-gap of around 2 eV, is a candidate for an intermediate-band material when it is doped with a specific transition-metal. In this work we characterize vanadium doped SnS2 using density functional theory at the dilution level experimentally found and including a dispersion correction combined with the site-occupancy-disorder method. In order to analyze the electronic characteristics that depend on geometry, two SnS2 polytypes partially substituted with vanadium in symmetry-adapted non-equivalent configurations were studied. In addition the magnetic configurations of vanadium in a SnS2 2H-polytype and its comparison with a 4H-polytype were also characterized. We demonstrate that a narrow intermediate-band is formed, when these dopant atoms are located in different layers. Our theoretical predictions confirm the recent experimental findings in which a paramagnetic intermediate-band material in a SnS2 2H-polytype with 10% vanadium concentration is obtained.

Nanoscale measurements of unoccupied band dispersion in few-layer graphene

PubMed Central

Jobst, Johannes; Kautz, Jaap; Geelen, Daniël; Tromp, Rudolf M.; van der Molen, Sense Jan

2015-01-01

The properties of any material are fundamentally determined by its electronic band structure. Each band represents a series of allowed states inside a material, relating electron energy and momentum. The occupied bands, that is, the filled electron states below the Fermi level, can be routinely measured. However, it is remarkably difficult to characterize the empty part of the band structure experimentally. Here, we present direct measurements of unoccupied bands of monolayer, bilayer and trilayer graphene. To obtain these, we introduce a technique based on low-energy electron microscopy. It relies on the dependence of the electron reflectivity on incidence angle and energy and has a spatial resolution ∼10 nm. The method can be easily applied to other nanomaterials such as van der Waals structures that are available in small crystals only. PMID:26608712

Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane

NASA Astrophysics Data System (ADS)

Qi, Jingshan; Li, Xiao; Qian, Xiaofeng

2016-06-01

Electrically controlled band gap and topological electronic states are important for the next-generation topological quantum devices. In this letter, we study the electric field control of band gap and topological phase transitions in multilayer germanane. We find that although the monolayer and multilayer germananes are normal insulators, a vertical electric field can significantly reduce the band gap of multilayer germananes owing to the giant Stark effect. The decrease of band gap eventually leads to band inversion, transforming them into topological insulators with nontrivial Z2 invariant. The electrically controlled topological phase transition in multilayer germananes provides a potential route to manipulate topologically protected edge states and design topological quantum devices. This strategy should be generally applicable to a broad range of materials, including other two-dimensional materials and ultrathin films with controlled growth.

All-optical materials design of chiral edge modes in transition-metal dichalcogenides

DOE PAGES

Claassen, Martin; Jia, Chunjing; Moritz, Brian; ...

2016-10-10

Monolayer transition-metal dichalcogenides are novel materials which at low energies constitute a condensed-matter realization of massive relativistic fermions in two dimensions. Here, we show that this picture breaks for optical pumping—instead, the added complexity of a realistic materials description leads to a new mechanism to optically induce topologically protected chiral edge modes, facilitating optically switchable conduction channels that are insensitive to disorder. In contrast to graphene and previously discussed toy models, the underlying mechanism relies on the intrinsic three-band nature of transition-metal dichalcogenide monolayers near the band edges. Photo-induced band inversions scale linearly in applied pump field and exhibit transitionsmore » from one to two chiral edge modes on sweeping from red to blue detuning. As a result, we develop an ab initio strategy to understand non-equilibrium Floquet–Bloch bands and topological transitions, and illustrate for WS 2 that control of chiral edge modes can be dictated solely from symmetry principles and is not qualitatively sensitive to microscopic materials details.« less

FP-LAPW calculations of the elastic, electronic and thermoelectric properties of the filled skutterudite CeRu{sub 4}Sb{sub 12}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shankar, A., E-mail: amitshan2009@gmail.com; Rai, D.P.; Chettri, Sandeep

2016-08-15

We have investigated the electronic structure, elastic and thermoelectric properties of the filled skutterudite CeRu{sub 4}Sb{sub 12} using the density functional theory (DFT). The full potential linearized augmented plane wave (FP-LAPW) method within a framework of the generalized gradient approximation (GGA) approach is used to perform the calculations presented here. The electronic structure calculation suggests an indirect band gap semiconducting nature of the material with energy band gap of 0.08 eV. The analysis of the elastic constants at relaxed positions reveals the ductile nature of the sample material with covalent contribution in the inter-atomic bonding. The narrow band gap semiconductingmore » nature with high value of Seebeck coefficient suggests the possibility of the thermoelectric application of the material. The analysis of the thermal transport properties confirms the result obtained from the energy band structure of the material with high thermopower and dimensionless figure of merit 0.19 at room temperature.« less

All-optical materials design of chiral edge modes in transition-metal dichalcogenides

PubMed Central

Claassen, Martin; Jia, Chunjing; Moritz, Brian; Devereaux, Thomas P.

2016-01-01

Monolayer transition-metal dichalcogenides are novel materials which at low energies constitute a condensed-matter realization of massive relativistic fermions in two dimensions. Here, we show that this picture breaks for optical pumping—instead, the added complexity of a realistic materials description leads to a new mechanism to optically induce topologically protected chiral edge modes, facilitating optically switchable conduction channels that are insensitive to disorder. In contrast to graphene and previously discussed toy models, the underlying mechanism relies on the intrinsic three-band nature of transition-metal dichalcogenide monolayers near the band edges. Photo-induced band inversions scale linearly in applied pump field and exhibit transitions from one to two chiral edge modes on sweeping from red to blue detuning. We develop an ab initio strategy to understand non-equilibrium Floquet–Bloch bands and topological transitions, and illustrate for WS2 that control of chiral edge modes can be dictated solely from symmetry principles and is not qualitatively sensitive to microscopic materials details. PMID:27721504

Energy band offsets of dielectrics on InGaZnO4

NASA Astrophysics Data System (ADS)

Hays, David C.; Gila, B. P.; Pearton, S. J.; Ren, F.

2017-06-01

Thin-film transistors (TFTs) with channels made of hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) are used extensively in the display industry. Amorphous silicon continues to dominate large-format display technology, but a-Si:H has a low electron mobility, μ ˜ 1 cm2/V s. Transparent, conducting metal-oxide materials such as Indium-Gallium-Zinc Oxide (IGZO) have demonstrated electron mobilities of 10-50 cm2/V s and are candidates to replace a-Si:H for TFT backplane technologies. The device performance depends strongly on the type of band alignment of the gate dielectric with the semiconductor channel material and on the band offsets. The factors that determine the conduction and valence band offsets for a given material system are not well understood. Predictions based on various models have historically been unreliable and band offset values must be determined experimentally. This paper provides experimental band offset values for a number of gate dielectrics on IGZO for next generation TFTs. The relationship between band offset and interface quality, as demonstrated experimentally and by previously reported results, is also explained. The literature shows significant variations in reported band offsets and the reasons for these differences are evaluated. The biggest contributor to conduction band offsets is the variation in the bandgap of the dielectrics due to differences in measurement protocols and stoichiometry resulting from different deposition methods, chemistry, and contamination. We have investigated the influence of valence band offset values of strain, defects/vacancies, stoichiometry, chemical bonding, and contamination on IGZO/dielectric heterojunctions. These measurements provide data needed to further develop a predictive theory of band offsets.

Optimizing the effectiveness of a mechanical suture-based anulus fibrosus repair construct in an acute failure laboratory simulation.

PubMed

Bartlett, Ashley; Wales, Larry; Houfburg, Rodney; Durfee, William K; Griffith, Steven L; Bentley, Ishmael

2013-10-01

In vitro comparative, laboratory experiments. This study developed a laboratory apparatus that measured resistance to failure using pressures similar to intradiscal pressure of a lumbar spinal disk. Various combinations of an anular repair device were compared. Herniated material of the intervertebral disk is removed during a lumbar discectomy; however, the defect in the anulus fibrosus remains and can provide a pathway for future herniation. Repairing the anulus fibrosus could mitigate this reherniation and improve patient outcomes. A pneumatic cylinder was used to increase the pressure of a sealed chamber until artificial nucleus pulposus material was expulsed through either a 3-mm circular (diameter) or a 6-mm slit anular defect created in a surrogate anulus fibrosus. Each unrepaired condition was compared with 3 repaired conditions using a commercially available soft tissue repair system. The repaired conditions included: (1) a single tension band; (2) 2 tension bands in a cruciate pattern; or (3) 2 tension bands in a parallel pattern. Maximum pressure at the point of extrusion of the internal chamber material and failure or nonfailure of the repair was measured. Significant differences were detected (P<0.05) in maximum failure pressures for the nonrepaired (control) versus repaired conditions. With 1 or 2 tension bands repairing the circular defect, the maximum failure pressure increased by approximately 76% and 131%, respectively. In addition, the failure pressure for 2 tension bands in either a cruciate or parallel configuration was not different, and was approximately 32% higher (P<0.05) than a single tension band in the case of the circular defect. Similar results were seen for the slit defect, with the exception that no difference between the repaired conditions (ie, single vs. 2 tension bands) was detected. This laboratory simulation demonstrated that repairing the anulus fibrosus after a discectomy procedure can be beneficial for retaining intradiscal material. The use of 2 tension bands, versus a single tension band, in either a cruciate or parallel configuration may further improve the ability to retain disk material.

The Application of Graphene and Its Derivatives to Energy Conversion, Storage, and Environmental and Biosensing Devices.

PubMed

Ali Tahir, Asif; Ullah, Habib; Sudhagar, Pitchaimuthu; Asri Mat Teridi, Mohd; Devadoss, Anitha; Sundaram, Senthilarasu

2016-06-01

Graphene (GR) and its derivatives are promising materials on the horizon of nanotechnology and material science and have attracted a tremendous amount of research interest in recent years. The unique atom-thick 2D structure with sp(2) hybridization and large specific surface area, high thermal conductivity, superior electron mobility, and chemical stability have made GR and its derivatives extremely attractive components for composite materials for solar energy conversion, energy storage, environmental purification, and biosensor applications. This review gives a brief introduction of GR's unique structure, band structure engineering, physical and chemical properties, and recent energy-related progress of GR-based materials in the fields of energy conversion (e.g., photocatalysis, photoelectrochemical water splitting, CO2 reduction, dye-sensitized and organic solar cells, and photosensitizers in photovoltaic devices) and energy storage (batteries, fuel cells, and supercapacitors). The vast coverage of advancements in environmental applications of GR-based materials for photocatalytic degradation of organic pollutants, gas sensing, and removal of heavy-metal ions is presented. Additionally, the use of graphene composites in the biosensing field is discussed. We conclude the review with remarks on the challenges, prospects, and further development of GR-based materials in the exciting fields of energy, environment, and bioscience. © 2016 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Factors Influencing Progressive Failure Analysis Predictions for Laminated Composite Structure

NASA Technical Reports Server (NTRS)

Knight, Norman F., Jr.

2008-01-01

Progressive failure material modeling methods used for structural analysis including failure initiation and material degradation are presented. Different failure initiation criteria and material degradation models are described that define progressive failure formulations. These progressive failure formulations are implemented in a user-defined material model for use with a nonlinear finite element analysis tool. The failure initiation criteria include the maximum stress criteria, maximum strain criteria, the Tsai-Wu failure polynomial, and the Hashin criteria. The material degradation model is based on the ply-discounting approach where the local material constitutive coefficients are degraded. Applications and extensions of the progressive failure analysis material model address two-dimensional plate and shell finite elements and three-dimensional solid finite elements. Implementation details are described in the present paper. Parametric studies for laminated composite structures are discussed to illustrate the features of the progressive failure modeling methods that have been implemented and to demonstrate their influence on progressive failure analysis predictions.

Surface composition of pull-apart bands in Argadnel Regio, Europa: Evidence of localized cryovolcanic resurfacing during basin formation

NASA Astrophysics Data System (ADS)

Prockter, Louise M.; Shirley, James H.; Dalton, James B.; Kamp, L.

2017-03-01

We combine Galileo Solid State Imager (SSI) and Near-Infrared Mapping Spectrometer (NIMS) data to investigate the composition of pull-apart bands in Europa's Argadnel Regio. Using spectral linear mixture modeling employing cryogenic laboratory reference spectra, we find that bands of intermediate age ("grey" bands) are compositionally distinct from bands that are stratigraphically younger ("dark" bands). The grey bands have higher abundances of larger ice grains and lower abundances of hydrated salts than the dark bands; both of these tendencies are statistically significant at the 1% level. The grey and dark bands have similar abundances of hexahydrite, a material which is relatively stable under irradiation; however, the derived abundances of frozen magnesium sulfate brine and of mirabilite, which are more susceptible to fragmentation by radiation, are significantly higher in the dark bands than in the grey bands. These results are consistent with a physical model in which the differences in composition and in ice grain sizes are linked to space weathering and radiolytic processing levels; the grey bands have presumably undergone higher levels of processing, due to being exposed on Europa's surface for a longer period of time. One prominent wedge-shaped band exhibits an anomalous albedo variation across its northern portion, appearing dark in its top third, and grey in its southernmost two-thirds. We find that the dark part of the band has a modeled composition that is in-family with other dark bands, while the grey portion has a modeled composition that is indistinguishable from other grey bands in the study area. Because these variations cannot easily be attributed to the band's formation mechanism (bands open sequentially along a central axis), we surmise that the northern part has been resurfaced, probably in response to the formation of a large topographic basin that cuts through the band. Faulting accompanying basin formation may provide conduits allowing transport to the surface of materials from Europa's interior. We hypothesize that the formation of the basin resulted in fresh cryovolcanic material being deposited across the northern portion of the band, effectively "resetting" its surface age. If, as has been suggested, the giant arcuate basins resulted from an episode of true polar wander, our study may help to more tightly constrain the age of that event within Europa's geologic column.

Identical Bands: Does ``Seeing Double'' Mean We Learn Twice as Much?

NASA Astrophysics Data System (ADS)

Fallon, Paul

1996-10-01

The phenomenon of `identical bands' has been under discussion for several years, however the origin of this surprising observation, whereby rotational cascades in different nuclei exhibit very similar transition energies (and/or moments of inertia), remains uncertain. The first cases of identical superdeformed bands were observed when only a small number of superdeformed bands were known. Since then many more examples of superdeformation have been found and it is important to see if the number of `identical' bands has risen in proportion. In addition the `identical' band discussion has been extended to normal deformed nuclei. In this talk I will briefly review the topic of identical bands and attempt to address the progress made and add some personal views on what remains to be done. Work supported in part by the U.S. DOE under contract number DE-AC03-76SF0098.

Idea Bank: Progress through Incentives: How One Music Program Helps Students Progress to Higher Levels of Musicianship

ERIC Educational Resources Information Center

Boyd, Joshua

2013-01-01

Students are motivated when they have a constant system of rewards. They have a desire to please others and be recognized. It was with this idea in mind that the Smokey Road Middle School Band in Newman, Georgia, started using the "Power in the Progress System" in 2011. This system, created by H. Dwight Satterwhite, a professor of music…

Forecasting of Radiation Belts: Results From the PROGRESS Project.

NASA Astrophysics Data System (ADS)

Balikhin, M. A.; Arber, T. D.; Ganushkina, N. Y.; Walker, S. N.

2017-12-01

Forecasting of Radiation Belts: Results from the PROGRESS Project. The overall goal of the PROGRESS project, funded in frame of EU Horizon2020 programme, is to combine first principles based models with the systems science methodologies to achieve reliable forecasts of the geo-space particle radiation environment.The PROGRESS incorporates three themes : The propagation of the solar wind to L1, Forecast of geomagnetic indices, and forecast of fluxes of energetic electrons within the magnetosphere. One of the important aspects of the PROGRESS project is the development of statistical wave models for magnetospheric waves that affect the dynamics of energetic electrons such as lower band chorus, hiss and equatorial noise. The error reduction ratio (ERR) concept has been used to optimise the set of solar wind and geomagnetic parameters for organisation of statistical wave models for these emissions. The resulting sets of parameters and statistical wave models will be presented and discussed. However the ERR analysis also indicates that the combination of solar wind and geomagnetic parameters accounts for only part of the variance of the emissions under investigation (lower band chorus, hiss and equatorial noise). In addition, advances in the forecast of fluxes of energetic electrons, exploiting empirical models and the first principles IMPTAM model achieved by the PROGRESS project is presented.

Synthesis and evaluation of ultra-pure rare-earth-coped glass for laser refrigeration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patterson, Wendy M; Hehlen, Markus P; Epstein, Richard I

2009-01-01

Significant progress has been made in synthesizing and characterizing ultra-pure, rare-earth doped ZIBLAN (ZrF{sub 4}-InF{sub 3}BaF{sub 2}-LaF{sub 3}-AlF{sub 3}-NaF) glass capable of laser refrigeration. The glass was produced from fluorides which were purified and subsequently treated with hydrofluoric gas at elevated temperatures to remove impurities before glass formation. Several Yb3 +-doped samples were studied with degrees of purity and composition with successive iterations producing an improved material. We have developed a non-invasive, spectroscopic technique, two band differential luminescence thermometry (TBDLT), to evaluate the intrinsic quality of the ytterbium doped ZIBLAN used for laser cooling experiments. TBDLT measures local temperature changesmore » within an illuminated volume resulting solely from changes in the relative thermal population of the excited state levels. This TBDLT technique utilizes two commercially available band pass filters to select and integrate the 'difference regions' of interest in the luminescence spectra. The goal is to determine the minimum temperature to which the ytterbium sample can cool on the local scale, unphased by surface heating. This temperature where heating and cooling are exactly balanced is the zero crossing temperature (ZCT) and can be used as a measure for the presence of impurities and the overall quality of the laser cooling material. Overall, favorable results were obtained from 1 % Yb3+-doped glass, indicating our glasses are desirable for laser refrigeration.« less

Angle-resolved photoemission spectroscopy studies of metallic surface and interface states of oxide insulators

NASA Astrophysics Data System (ADS)

Plumb, Nicholas C.; Radović, Milan

2017-11-01

Over the last decade, conducting states embedded in insulating transition metal oxides (TMOs) have served as gateways to discovering and probing surprising phenomena that can emerge in complex oxides, while also opening opportunities for engineering advanced devices. These states are commonly realized at thin film interfaces, such as the well-known case of LaAlO3 (LAO) grown on SrTiO3 (STO). In recent years, the use of angle-resolved photoemission spectroscopy (ARPES) to investigate the k-space electronic structure of such materials led to the discovery that metallic states can also be formed on the bare surfaces of certain TMOs. In this topical review, we report on recent studies of low-dimensional metallic states confined at insulating oxide surfaces and interfaces as seen from the perspective of ARPES, which provides a direct view of the occupied band structure. While offering a fairly broad survey of progress in the field, we draw particular attention to STO, whose surface is so far the best-studied, and whose electronic structure is probably of the most immediate interest, given the ubiquitous use of STO substrates as the basis for conducting oxide interfaces. The ARPES studies provide crucial insights into the electronic band structure, orbital character, dimensionality/confinement, spin structure, and collective excitations in STO surfaces and related oxide surface/interface systems. The obtained knowledge increases our understanding of these complex materials and gives new perspectives on how to manipulate their properties.

Imaging the motion of electrons in 2D semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Dani, Keshav

Technological progress since the late 20th century has centered on semiconductor devices, such as transistors, diodes, and solar cells. At the heart of these devices, is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. In this talk, we combine femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy to image the motion of photoexcited electrons from high-energy to low-energy states in a 2D InSe/GaAs heterostructure exhibiting a type-II band alignment. At the instant of photoexcitation, energy-resolved photoelectron images reveal a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observe the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we make a movie lasting a few tens of picoseconds of the electron transfer process in the photoexcited type-II heterostructure - a fundamental phenomenon in semiconductor devices like solar cells. Quantitative analysis and theoretical modeling of spatial variations in the video provide insight into future solar cells, electron dynamics in 2D materials, and other semiconductor devices.

Body composition influenced by progressive elastic band resistance exercise of sarcopenic obesity elderly women: a pilot randomized controlled trial.

PubMed

Huang, Shih-Wei; Ku, Jan-Wen; Lin, Li-Fong; Liao, Chun-De; Chou, Lin-Chuan; Liou, Tsan-Hon

2017-08-01

Sarcopenia involves age-related decreases in muscle strength and muscle mass, leading to frailty and disability in elderly people. When combined with obesity, it is defined as sarcopenic obesity (SO), which can result in more functional limitations and metabolic disorders than either disorder alone. The aim of this study was to investigate body composition changes after elastic band resistance training in elderly women with SO. Randomized single-blinded (assessor blinded) controlled pilot trial. Academic medical center. Thirty-five elderly (>60 years old) women with SO. This pilot randomized controlled trial focused on elderly women with SO. The study group underwent progressive elastic band resistance training for 12 weeks (3 times per week). The control group received only a 40-minute lesson about the exercise concept. Dual-energy X-ray absorptiometry was performed before and after intervention to evaluate body composition. Mann-Whitney U and Wilcoxon signed rank tests were used to analyze the differences within and between these groups. In total, 35 elderly women with SO were enrolled and divided into study (N.=18) and control groups (N.=17). No difference was observed in age, biochemical parameters, or Body Mass Index between both groups. After the intervention, the fat proportion of body composition in the right upper extremity (P=0.03), left upper extremity (P=0.04), total fat (P=0.035), and fat percentage (P=0.012) had decreased, and bone mineral density (BMD) (P=0.026), T-score (P=0.028), and Z-score (P=0.021) had increased in the study group. Besides, statistical difference was observed in outcome measurements of right upper extremity (P=0.013), total fat (P=0.023), and fat percentage (P=0.012) between the groups. Our study demonstrated that progressive elastic band resistance exercise can reduce fat mass and increase BMD in elderly women with SO, and that this exercise program is feasible for this demographic. Additional studies with larger sample sizes and longer intervention periods should be conducted. Twelve weeks of progressive elastic band resistance exercise program is safe and effective for SO elder women.

Progress in Piezo-Phototronic-Effect-Enhanced Light-Emitting Diodes and Pressure Imaging.

PubMed

Pan, Caofeng; Chen, Mengxiao; Yu, Ruomeng; Yang, Qing; Hu, Youfan; Zhang, Yan; Wang, Zhong Lin

2016-02-24

Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non-central symmetric crystal structures. The three-way coupling of semiconductor properties, piezoelectric polarization and optical excitation in ZnO, GaN, CdS and other piezoelectric semiconductors leads to the emerging field of piezo-phototronics. This effect can efficiently manipulate the emission intensity of light-emitting diodes (LEDs) by utilizing the piezo-polarization charges created at the junction upon straining to modulate the energy band diagrams and the optoelectronic processes, such as generation, separation, recombination and/or transport of charge carriers. Starting from fundamental physics principles, recent progress in piezo-phototronic-effect-enhanced LEDs is reviewed; following their development from single-nanowire pressure-sensitive devices to high-resolution array matrices for pressure-distribution mapping applications. The piezo-phototronic effect provides a promising method to enhance the light emission of LEDs based on piezoelectric semiconductors through applying static strains, and may find perspective applications in various optoelectronic devices and integrated systems. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental observations of shear band nucleation and propagation in a bulk metallic glass using wedge-like cylindrical indentation

NASA Astrophysics Data System (ADS)

Antoniou, Antonia Maki

2006-12-01

Bulk metallic glasses (BMGs), or amorphous metal alloys, have a unique combination of properties such as high strength, large elastic strain limit (up to 2%), corrosion resistance and formability. These unique properties make them candidates for precision mechanical elements, hinge supports, contact surfaces as well as miniaturized systems (MEMS). However, their limited ductility hinders further realizations of their industrial potential. Under uniaxial tension tests, metallic glass fails in a brittle manner with unstable propagation of a single shear band. There is a need to understand the conditions for shear band nucleation and propagation in order to achieve a superior material system with adequate toughness to ensure in-service reliability. This dissertation focuses on understanding the nucleation and propagation mechanisms of shear bands in BMGs under constrained deformation. The nature of the work is primarily experimental with integrated finite element simulations to elucidate the observed trends. Wedge indentation with a circular profile of different radii is used to provide a stable loading path for in situ monitoring of shear band nucleation, propagation in Vitreloy-1. Detailed analyses of the in-plane finite deformation fields are carried out using digital image correlation. The incremental surface analysis showed that multiple shear bands are developed beneath the indenter. The observed pattern closely follow the traces of slip line field for a pressure sensitive material. The first shear bands initiate in the bulk beneath the indenter when a critical level of mean pressure is achieved. Two distinct shear band patterns are developed, that conform to either the alpha or beta lines for each sector. The deformation zones developed under indenters with different radii were found to be self-similar. The evolution of shear bands beneath the indenter is also characterized into two different categories. A set of primary bands is identified to evolve with the process zone front and presents an included angle of 78°-80°. The other set of bands evolves at a later stage of loading within the originally formed ones but with consistently higher included angle of around 87°. The band spacing is found to scale with the local average of maximum in-plane shear strain such that the local strain energy is minimized. The measurements shed light on the critical shear strain needed to initiate these bands. The richness of the shear band network establishes a basis for calibration of constitutive models. Experimental in-plane deformation maps show the amount of total strain that builds prior to the initiation of localized deformation. Furthermore, the maps help examine the change imposed on the surrounding strain field by the appearance of shear bands. It was verified that shear bands relax the asymptotic field by changing the order of singularity. Finally, it was seen that the shear bands are not the only accumulation of permanent deformation but that the surrounding material can accrue relatively high level of inelastic deformation (up to 5%). To rationalize these findings, the Johnson cavity expansion model is adapted and modified to account for pressure-dependent yielding conditions. The elasto-plastic boundary from such analysis is used to scale the experimental measurements for all indenter radii, loading level and spatial position beneath the indenter. The continuum finite element simulations have shown that the macroscopic measurements of force-depth indentation curves would predict a lower value of the pressure sensitivity than those observed from the detailed microscopic measurements. Moreover, a transition from pressure insensitive response to progressive pressure sensitivity is observed by decreasing the indenter radius, or in effect by increasing the level of hydrostatic pressure under the indenter. This leads to the belief that the BMG's pressure sensitivity parameter is in itself dependent on the level of the applied pressure. These observations give detailed insight on the post-yield behavior of BMGs, which cannot be obtained from macroscopic uniaxial tension or compression tests. Despite the richness of the shear band details, the current framework has provided several notable results. First, the macroscopic trends, force-indentation depth response and the extent of deformation zones are well captured for this constrained deformation mode by continuum models that address only the onset of yielding. Second, the apparent pressure dependence of the shear band angle on the macroscopic measurements is minimal. Third, the initiation point, and not the shear band development is of critical importance. These findings would formulate the basis for simulation of shear band nucleation, propagation and interactions. They would also elucidate the role of secondary particle inclusion for toughening. Another form of inhomogeneous deformation in the form of shear bands is also studied in constrained layer of ductile metal subjected to shearing deformation. The material system utilized was comprised of a ductile layer of tin based solder, encapsulated within relatively hard copper shoulders. The experimental configuration provides pure shear state within the constrained solder layer. Different Pb/Sn compositions are tested with grain size approaching the film thickness. The in-plane strain distribution within the joint thickness is measured by a microscopic digital image correlation system. The toughness evolution within such highly gradient deformation field is monitored qualitatively through a 2D surface scan with a nanoindenter. The measurements showed a highly inhomogeneous deformation field within the film with discreet shear bands of concentrated strain. The localized shear bands showed long-range correlations of the order of 2-3 grain diameter. A size-dependent macroscopic response on the layer thickness is observed. However, the corresponding film thickness is approximately 100-1000 times larger than those predicted by non-local continuum theories and discreet dislocation.

Tunable photonic crystals with partial bandgaps from blue phase colloidal crystals and dielectric-doped blue phases.

PubMed

Stimulak, Mitja; Ravnik, Miha

2014-09-07

Blue phase colloidal crystals and dielectric nanoparticle/polymer doped blue phases are demonstrated to combine multiple components with different symmetries in one photonic material, creating a photonic crystal with variable and micro-controllable photonic band structure. In this composite photonic material, one contribution to the band structure is determined by the 3D periodic birefringent orientational profile of the blue phases, whereas the second contribution emerges from the regular array of the colloidal particles or from the dielectric/nanoparticle-doped defect network. Using the planewave expansion method, optical photonic bands of the blue phase I and II colloidal crystals and related nanoparticle/polymer doped blue phases are calculated, and then compared to blue phases with no particles and to face-centred-cubic and body-centred-cubic colloidal crystals in isotropic background. We find opening of local band gaps at particular points of Brillouin zone for blue phase colloidal crystals, where there were none in blue phases without particles or dopants. Particle size and filling fraction of the blue phase defect network are demonstrated as parameters that can directly tune the optical bands and local band gaps. In the blue phase I colloidal crystal with an additionally doped defect network, interestingly, we find an indirect total band gap (with the exception of one point) at the entire edge of SC irreducible zone. Finally, this work demonstrates the role of combining multiple - by symmetry - differently organised components in one photonic crystal material, which offers a novel approach towards tunable soft matter photonic materials.

Accurate determination of the valence band edge in hard x-ray photoemission spectra using GW theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lischner, Johannes, E-mail: jlischner597@gmail.com; Department of Physics and Department of Materials and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, London SW7 2AZ; Nemšák, Slavomír

We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band region of the experimental spectrum with the corresponding feature of a theoretical valence-band density of states curve from ab initio GW theory calculations. This method is particularly useful for soft and hard x-ray photoemission studies of materials with a mixture of valence-band characters, where strong matrix element effects can render standard methods for extracting the valence-band maximum unreliable. We apply our method to hydrogen-terminated boron-doped diamond, which is a promising substrate material for novelmore » solar cell devices. By carrying out photoemission experiments with variable light polarizations, we verify the accuracy of our analysis and the general validity of the method.« less

Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Jingshan, E-mail: qijingshan@jsnu.edu.cn, E-mail: feng@tamu.edu; Li, Xiao; Qian, Xiaofeng, E-mail: qijingshan@jsnu.edu.cn, E-mail: feng@tamu.edu

2016-06-20

Electrically controlled band gap and topological electronic states are important for the next-generation topological quantum devices. In this letter, we study the electric field control of band gap and topological phase transitions in multilayer germanane. We find that although the monolayer and multilayer germananes are normal insulators, a vertical electric field can significantly reduce the band gap of multilayer germananes owing to the giant Stark effect. The decrease of band gap eventually leads to band inversion, transforming them into topological insulators with nontrivial Z{sub 2} invariant. The electrically controlled topological phase transition in multilayer germananes provides a potential route tomore » manipulate topologically protected edge states and design topological quantum devices. This strategy should be generally applicable to a broad range of materials, including other two-dimensional materials and ultrathin films with controlled growth.« less

Solar fuels photoanode materials discovery by integrating high-throughput theory and experiment

DOE PAGES

Yan, Qimin; Yu, Jie; Suram, Santosh K.; ...

2017-03-06

The limited number of known low-band-gap photoelectrocatalytic materials poses a significant challenge for the generation of chemical fuels from sunlight. Here, using high-throughput ab initio theory with experiments in an integrated workflow, we find eight ternary vanadate oxide photoanodes in the target band-gap range (1.2-2.8 eV). Detailed analysis of these vanadate compounds reveals the key role of VO 4 structural motifs and electronic band-edge character in efficient photoanodes, initiating a genome for such materials and paving the way for a broadly applicable high-throughput-discovery and materials-by-design feedback loop. Considerably expanding the number of known photoelectrocatalysts for water oxidation, our study establishesmore » ternary metal vanadates as a prolific class of photoanodematerials for generation of chemical fuels from sunlight and demonstrates our high-throughput theory-experiment pipeline as a prolific approach to materials discovery.« less

Solar fuels photoanode materials discovery by integrating high-throughput theory and experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Qimin; Yu, Jie; Suram, Santosh K.

The limited number of known low-band-gap photoelectrocatalytic materials poses a significant challenge for the generation of chemical fuels from sunlight. Here, using high-throughput ab initio theory with experiments in an integrated workflow, we find eight ternary vanadate oxide photoanodes in the target band-gap range (1.2-2.8 eV). Detailed analysis of these vanadate compounds reveals the key role of VO 4 structural motifs and electronic band-edge character in efficient photoanodes, initiating a genome for such materials and paving the way for a broadly applicable high-throughput-discovery and materials-by-design feedback loop. Considerably expanding the number of known photoelectrocatalysts for water oxidation, our study establishesmore » ternary metal vanadates as a prolific class of photoanodematerials for generation of chemical fuels from sunlight and demonstrates our high-throughput theory-experiment pipeline as a prolific approach to materials discovery.« less

Final Report: Rational Design of Wide Band Gap Buffer Layers for High-Efficiency Thin-Film Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lordi, Vincenzo

The main objective of this project is to enable rational design of wide band gap buffer layer materials for CIGS thin-film PV by building understanding of the correlation of atomic-scale defects in the buffer layer and at the buffer/absorber interface with device electrical properties. Optimized wide band gap buffers are needed to reduce efficiency loss from parasitic absorption in the buffer. The approach uses first-principles materials simulations coupled with nanoscale analytical electron microscopy as well as device electrical characterization. Materials and devices are produced by an industrial partner in a manufacturing line to maximize relevance, with the goal of enablingmore » R&D of new buffer layer compositions or deposition processes to push device efficiencies above 21%. Cadmium sulfide (CdS) is the reference material for analysis, as the prototypical high-performing buffer material.« less

Design of an ultra-thin absorption layer with magnetic materials based on genetic algorithm at the S band

NASA Astrophysics Data System (ADS)

Wang, Fang; Yang, Xiaoning; Liu, Xiaoning; Niu, Tiaoming; Wang, Jing; Mei, Zhonglei; Jian, Yabin

2018-04-01

In this work, we design an ultra-thin absorption coating at the S band, and the total thickness is less than 2 mm. For incident angle less than 30 degree and the whole S band, the reflection is less than -5 dB. The coating is constructed with 4/3 layers of magnetic material with different thicknesses, which are optimized by using genetic algorithm. Analytic and simulation results confirm the correctness of the design.

Holmium Doped Solid State Laser Resonantly Pumped and Q-Switched by Novel GaSb-Based Photonic Devices

DTIC Science & Technology

2011-08-31

increased overlap with p-cladding, presumably due to dominant role of inter valence band absorption [7]. Details of the conduction band structure of the...absorption to total loss. In the specific structures used here the n-cladding composition resulted into material with three valleys in conduction band to...materials. The beam properties of the high power 2 μm emitting GaSb -based diode lasers was improved by utilization of the waveguide structure with

Angle-resolved photoemission spectroscopy of strontium lanthanum copper oxide thin films grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Harter, John Wallace

Among the multitude of known cuprate material families and associated structures, the archetype is "infinite-layer" ACuO2, where perfectly square and flat CuO2 planes are separated by layers of alkaline earth atoms. The infinite-layer structure is free of magnetic rare earth ions, oxygen chains, orthorhombic distortions, incommensurate superstructures, ordered vacancies, and other complications that abound among the other material families. Furthermore, it is the only cuprate that can be made superconducting by both electron and hole doping, making it a potential platform for decoding the complex many-body interactions responsible for high-temperature superconductivity. Research on the infinite-layer compound has been severely hindered by the inability to synthesize bulk single crystals, but recent progress has led to high-quality superconducting thin film samples. Here we report in situ angle-resolved photoemission spectroscopy measurements of epitaxially-stabilized Sr1-chiLa chiCuO2 thin films grown by molecular-beam epitaxy. At low doping, the material exhibits a dispersive lower Hubbard band typical of other cuprate parent compounds. As carriers are added to the system, a continuous evolution from Mott insulator to superconducting metal is observed as a coherent low-energy band develops on top of a concomitant remnant lower Hubbard band, gradually filling in the Mott gap. For chi = 0.10, our results reveal a strong coupling between electrons and (pi,pi) anti-ferromagnetism, inducing a Fermi surface reconstruction that pushes the nodal states below the Fermi level and realizing nodeless superconductivity. Electron diffraction measurements indicate the presence of a surface reconstruction that is consistent with the polar nature of Sr1-chiLachiCuO2. Most knowledge about the electron-doped side of the cuprate phase diagram has been deduced by generalizing from a single material family, Re2-chi CechiCuO4, where robust antiferromagnetism has been observed past chi ≈ 0.14. In contrast, in all hole-doped cuprates, Neel order is rapidly suppressed by chi ≈ 0.03, with superconductivity following at higher doping levels. Studies of cuprates, however, often yield material-specific features that are idiosyncratic to particular compounds. By studying a completely different electron-doped cuprate, we can for the first time independently confirm that the cuprate phase diagram is fundamentally asymmetric and provide a coherent framework for understanding the generic properties of all electron-doped cuprates.

Hydrocarbons in the ISM: Their Evolution and the Grain-to-Molecule Transition

NASA Astrophysics Data System (ADS)

Jones, Anthony P.

The evolution of hydrocarbon grains in the ISM is determined, principally, by the effects of photo-processing (annealing) which lead to a progressive loss of hydrogen from the structure and an associated 'graphitisation' of the material. Eventually this 'graphitisation' results in a low-density, highly aromatic material that can disaggregate into its aromatic-rich molecular components. These changes are followed through the use of an extended random covalent network (RCN) model for the hydrocarbon structure. This type of 'top down' process could be a significant source of the large molecular infrared band carriers in photon dominated regions. On the basis of this simple model there should thus be a relationship between the small grain and large molecule infrared emission bands across, and within, astrophysical boundaries such as photo-dissociation regions. 1. Introduction Carbon is the most abundant dust-forming element in the ISM and a large fraction of this carbon is in the form of grains comprised, principally, of hydrocarbon materials, including those where the hydrogen content is minimal. Interstellar hydrocarbon grains include: graphite, hydrogenated amorphous aliphatic and/or aromatic hydrocarbons (a-C, a-C:H) and (nano)diamond. These hydrocarbon dusts play a pivotal role in determining, amongst other things, the interstellar extinction, the dust thermal emission and the photo-electric heating of the gas in the ISM. 2. Hydrocarbon grains in the ISM Hydrocarbon grains are formed in the circumstellar shells around C-rich evolved stars, in supernova ejecta and also in the ISM itself via accretion and solid-state chemistry. The physical and chemical properties of hydrocarbon grains are indeed complex and vary in response to the ambient conditions (density, temperature, radiation field, ...). For example they can undergo both chemical and physical processing (growth and changes in chemical composition through accretion and reaction, erosion via inertial or chemi-sputtering, photo-darkening or 'graphitisation', photo-disruption in intense radiation fields and fragmentation in interstellar shock waves). Recently, using laboratory simulations of carbon dust analogues, Dartois, Muñoz Caro, Deboffle, et al. (2004,2005) have shown that hydrogen-rich (> 50 atomic % H) hydrocarbon solids can explain the observed interstellar absorption bands at 3.4, 6.85 and 7.25 μm. They also show that the thermal annealing of this material is accompanied by an increase in the aromatic component, i.e., a 'graphitisation'. Such a transformation and evolution of interstellar hydrocarbons was proposed by Duley, Jones & Williams (1989) and Jones, Duley & Wiliams (1990). This photon-driven process, acting on the hydrogen-rich hydrocarbon grains in the ISM that originate predominantly from carbon-rich evolved stars, will lead to a progressive loss of hydrogen and an associated 'graphitisation' and 'openingup' of the structure. The end point of the 'graphitisation' process is then a low-density material that will disaggregate into its constituent aromatic molecular components and the necessarily-associated sp3 and sp2 carbon and hydrogen atom bridging structures, e.g., Duley (2000), Petrie, Stranger & Duley (2003). In this work we follow the 'graphitisation' process using a random covalent network (RCN) approach that extends the work of Jones (1990). To summarise, the RCN model characterises a series of hydrocarbons based upon the sp3/sp2 carbon atom ratio (R) and the atomic fraction of hydrogen (XH) within the material. This model allows an essentially one-parameter determination of the a-C:H structure and a prediction of the major infrared bands. We find that the large hydrocarbon grains, with temperatures in equilibrium with the local radiation field, will be rather hydrogen-rich and that the smaller grains, which undergo stochastic heating to high temperatures, will be converted into hydrogen-poorer and more graphitic materials. The photo-fragmentation of the smaller aromatic grains can be an important source of molecular aromatic species. The infrared spectrum of a given RCN hydrocarbon depends, principally, upon only its hydrogen content XH. The spectra predicted from this RCN model can then be compared with the interstellar absorption and emission bands in the 32 μm range. The compositional changes of a-C:H, and its constituent 'molecular' components, can then be mapped across a given region. 3. Conclusions The physics and chemistry of hydrocarbon grains is complex. Interstellar hydrocarbon grains will be a mixture of many different forms arising from many different sources and modified in many different regions of the ISM. Nevertheless, we can appreciate how this complex material evolves chemically, structurally and physically as a function of the ambient conditions through the use of a rather simple, and extended, RCN model. The transition/evolution of hydrocarbons in the ISM is, generally, from hydrogen-rich a-C:H, in the form of large grains formed around evolved stars, through to smaller, hydrogen-poor, low-density, aromatic a-C:H materials. The subsequent photo-fragmentation of the small aromatic grains could then be the origin of the aromatic emission band carriers within the ISM. We find that the spectral and physical properties of hydrocarbons in the ISM vary in a systematic way across, and also within, astrophysical environments. However, the history of the particles, prior to their incorporation into a given region, could also play a major role in determining their physical properties in that region. Thus, the evolution of hydrocarbon grains in the ISM will be size-, time- and history-dependent. It is therefore necessary that dust models take into account this complexity in predicting the properties of hydrocarbons in the ISM.

Band crossing in isovalent semiconductor alloys with large size mismatch

NASA Astrophysics Data System (ADS)

Deng, Hui-Xiong; Wei, Su-Huai

2012-02-01

Mixing isovalent compounds AC with BC to form alloys A1-xBxC has been an effective way in band structure engineering to enhance the availability of material properties. In most cases, the mixed isovalent atoms A and B, such as Al and Ga in Al1-xGaxAs or As and Sb in GaAs1-xSbx are similar in their atomic sizes and chemical potentials; therefore, the physical properties of A1-xBxC change smoothly from AC to BC. However, in some cases when the chemical and size differences between the isovalent atoms A and B are large, adding a small amount of B to AC or vice versa can lead to a discontinuous change in the electronic band structure. These large size- and chemicalmismatched (LSCM) systems often show unusual and abrupt changes in the alloys' material properties, which provide great potential in material design for novel device applications. In this report, based on first-principles band-structure calculations we show that for LSCM GaAs1-xNx and GaAs1-xBix alloys at the impurity limit the N (Bi)-induced impurity level is above (below) the conduction-(valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

Soft phononic crystals with deformation-independent band gaps

PubMed Central

2017-01-01

Soft phononic crystals have the advantages over their stiff counterparts of being flexible and reconfigurable. Normally, the band gaps of soft phononic crystals will be modified after deformation due to both geometric and constitutive nonlinearity. Indeed these are important properties that can be exploited to tune the dynamic properties of the material. However, in some instances, it may be that one wishes to deform the medium while retaining the band gap structure. A special class of soft phononic crystals is described here with band gaps that are independent or almost-independent of the imposed mechanical deformation, which enables the design of phononic crystals with robust performance. This remarkable behaviour originates from transformation elasticity theory, which leaves the wave equation and the eigenfrequencies invariant after deformation. The necessary condition to achieve such a property is that the Lagrangian elasticity tensor of the hyperelastic material should be constant, i.e. independent of deformation. It is demonstrated that incompressible neo-Hookean materials exhibit such a unique property. Semilinear materials also possess this property under special loading conditions. Phononic crystals composed of these two materials are studied theoretically and the predictions of invariance, or the manner in which the response deviates from invariance, are confirmed via numerical simulation. PMID:28484331

An X-band waveguide measurement technique for the accurate characterization of materials with low dielectric loss permittivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allen, Kenneth W., E-mail: kenneth.allen@gtri.gatech.edu; Scott, Mark M.; Reid, David R.

In this work, we present a new X-band waveguide (WR90) measurement method that permits the broadband characterization of the complex permittivity for low dielectric loss tangent material specimens with improved accuracy. An electrically long polypropylene specimen that partially fills the cross-section is inserted into the waveguide and the transmitted scattering parameter (S{sub 21}) is measured. The extraction method relies on computational electromagnetic simulations, coupled with a genetic algorithm, to match the experimental S{sub 21} measurement. The sensitivity of the technique to sample length was explored by simulating specimen lengths from 2.54 to 15.24 cm, in 2.54 cm increments. Analysis ofmore » our simulated data predicts the technique will have the sensitivity to measure loss tangent values on the order of 10{sup −3} for materials such as polymers with relatively low real permittivity values. The ability to accurately characterize low-loss dielectric material specimens of polypropylene is demonstrated experimentally. The method was validated by excellent agreement with a free-space focused-beam system measurement of a polypropylene sheet. This technique provides the material measurement community with the ability to accurately extract material properties of low-loss material specimen over the entire X-band range. This technique could easily be extended to other frequency bands.« less

Current trends on 2D materials for photonics devices: an NSF perspective (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fallahi, Mahmoud

2017-05-01

Recent advancements in two-dimensional (2D) materials have opened significant research opportunities in optics and photonics. While the initial focus on 2D materials was on Graphene, new generation of 2D materials such as hexagonal boron nitride (h-BN), transition metal dichalcogenides (TMDCs), monolayer black phosphorous (BP) and other monolayer structures have shown unique electrical and optical properties. For example, h-BN is an insulator, while monolayers of some TMDCs such as MoS2 and WSe2 are direct band-gap semiconductors. Depending on the choice of material compositional and layer variations their optical properties can be engineered, making them particularly attractive as novel light sources, photodetectors, modulators and photovoltaic components, in particular for few photon applications. Plasmonic properties of 2D materials make them suitable for nanophotonics and monolithic integration with other conventional materials. The National Science Foundation (NSF) is a US federal agency dedicated to promote progress of science and engineering. NSF is the funding source for approximately 24 percent of all federally supported basic research conducted by America's colleges and universities. NSF has recently supported several initiatives related to novel 2D material and device research. In this talk, I will first give an overview of the NSF programs and funding opportunities. The second part of the talk will be focused on the programs related to 2D materials for photonic devices and program specific initiatives. Several highlights of the recent achievements and awards in the field of 2D materials for photonic devices will be presented.

Exciplex electroluminescence and photoluminescence spectra of the new organic materials based on zinc complexes of sulphanylamino-substituted ligands.

PubMed

Kaplunov, Mikhail G; Krasnikova, Svetlana S; Nikitenko, Sergey L; Sermakasheva, Natalia L; Yakushchenko, Igor K

2012-04-03

We have investigated the electroluminescence spectra of the electroluminescent devices based on the new zinc complexes of amino-substituted benzothiazoles and quinolines containing the C-N-M-N chains in their chelate cycles. The spectra exhibit strong exciplex bands in the green to yellow region 540 to 590 nm due to interaction of the excited states of zinc complexes and triaryl molecules of the hole-transporting layer. For some devices, the intrinsic luminescence band of 460 nm in the blue region is also observed along with the exciplex band giving rise to an almost white color of the device emission. The exciplex band can be eliminated if the material of the hole-transporting layer is not a triarylamine derivative. We have also found the exciplex emission in the photoluminescence spectra of the films containing blends of zinc complex and triphenylamine material.

Exciplex electroluminescence and photoluminescence spectra of the new organic materials based on zinc complexes of sulphanylamino-substituted ligands

PubMed Central

2012-01-01

We have investigated the electroluminescence spectra of the electroluminescent devices based on the new zinc complexes of amino-substituted benzothiazoles and quinolines containing the C-N-M-N chains in their chelate cycles. The spectra exhibit strong exciplex bands in the green to yellow region 540 to 590 nm due to interaction of the excited states of zinc complexes and triaryl molecules of the hole-transporting layer. For some devices, the intrinsic luminescence band of 460 nm in the blue region is also observed along with the exciplex band giving rise to an almost white color of the device emission. The exciplex band can be eliminated if the material of the hole-transporting layer is not a triarylamine derivative. We have also found the exciplex emission in the photoluminescence spectra of the films containing blends of zinc complex and triphenylamine material. PMID:22471942

Tunability of temperature dependent THz photonic band gaps in 1-D photonic crystals composed of graded index materials and semiconductor InSb

NASA Astrophysics Data System (ADS)

Singh, Bipin K.; Pandey, Praveen C.; Rastogi, Vipul

2018-05-01

Tunable temperature dependent terahertz photonic band gaps (PBGs) in one-dimensional (1-D) photonic crystal composed of alternating layers of graded index and semiconductor materials are demonstrated. Results show the influence of temperature, geometrical parameters, grading profile and material damping factor on the PBGs. Number of PBG increases with increasing the layer thickness and their bandwidth can be tuned with external temperature and grading parameters. Lower order band gap is more sensitive to the temperature which shows increasing trend with temperature, and higher order PBGs can also be tuned by controlling the external temperature. Band edges of PBGs are shifted toward higher frequency side with increasing the temperature. Results show that the operational frequencies of PBGs are unaffected when loss involved. This work enables to design tunable Temperature dependent terahertz photonic devices such as reflectors, sensors and filters etc.

Compaction dynamics of crunchy granular material

NASA Astrophysics Data System (ADS)

Guillard, François; Golshan, Pouya; Shen, Luming; Valdès, Julio R.; Einav, Itai

2017-06-01

Compaction of brittle porous material leads to a wide variety of densification patterns. Static compaction bands occurs naturally in rocks or bones, and have important consequences in industry for the manufacturing of powder tablets or metallic foams for example. Recently, oscillatory compaction bands have been observed in brittle porous media like snow or cereals. We will discuss the great variety of densification patterns arising during the compaction of puffed rice, including erratic compaction at low velocity, one or several travelling compaction bands at medium velocity and homogeneous compaction at larger velocity. The conditions of existence of each pattern are studied thanks to a numerical spring lattice model undergoing breakage and is mapped to the phase diagram of the patterns based on dimensionless characteristic quantities. This also allows to rationalise the evolution of the compaction behaviour during a single test. Finally, the localisation of compaction bands is linked to the strain rate sensitivity of the material.

Band alignment at the CdS/FeS2 interface based on the first-principles calculation

NASA Astrophysics Data System (ADS)

Ichimura, Masaya; Kawai, Shoichi

2015-03-01

FeS2 is potentially well-suited for the absorber layer of a thin-film solar cell. Since it usually has p-type conductivity, a pn heterojunction cell can be fabricated by combining it with an n-type material. In this work, the band alignment in the heterostructure based on FeS2 is investigated on the basis of the first-principles calculation. CdS, the most popular buffer-layer material for thin-film solar cells, is selected as the partner in the heterostructure. The results indicate that there is a large conduction band offset (0.65 eV) at the interface, which will hinder the flow of photogenerated electrons from FeS2 to CdS. Thus an n-type material with the conduction band minimum positioned lower than that of CdS will be preferable as the partner in the heterostructure.

Perovskite-perovskite tandem photovoltaics with optimized band gaps

NASA Astrophysics Data System (ADS)

Eperon, Giles E.; Leijtens, Tomas; Bush, Kevin A.; Prasanna, Rohit; Green, Thomas; Wang, Jacob Tse-Wei; McMeekin, David P.; Volonakis, George; Milot, Rebecca L.; May, Richard; Palmstrom, Axel; Slotcavage, Daniel J.; Belisle, Rebecca A.; Patel, Jay B.; Parrott, Elizabeth S.; Sutton, Rebecca J.; Ma, Wen; Moghadam, Farhad; Conings, Bert; Babayigit, Aslihan; Boyen, Hans-Gerd; Bent, Stacey; Giustino, Feliciano; Herz, Laura M.; Johnston, Michael B.; McGehee, Michael D.; Snaith, Henry J.

2016-11-01

We demonstrate four- and two-terminal perovskite-perovskite tandem solar cells with ideally matched band gaps. We develop an infrared-absorbing 1.2-electron volt band-gap perovskite, FA0.75Cs0.25Sn0.5Pb0.5I3, that can deliver 14.8% efficiency. By combining this material with a wider-band gap FA0.83Cs0.17Pb(I0.5Br0.5)3 material, we achieve monolithic two-terminal tandem efficiencies of 17.0% with >1.65-volt open-circuit voltage. We also make mechanically stacked four-terminal tandem cells and obtain 20.3% efficiency. Notably, we find that our infrared-absorbing perovskite cells exhibit excellent thermal and atmospheric stability, not previously achieved for Sn-based perovskites. This device architecture and materials set will enable “all-perovskite” thin-film solar cells to reach the highest efficiencies in the long term at the lowest costs.

Tunable Dielectric Materials and Devices for Broadband Wireless Communications

NASA Technical Reports Server (NTRS)

Mueller, Carl H.; Miranda, Felix A.; Dayton, James A. (Technical Monitor)

1998-01-01

Wireless and satellite communications are a rapidly growing industries which are slated for explosive growth into emerging countries as well as countries with advanced economies. The dominant trend in wireless communication systems is towards broadband applications such as multimedia file transfer, video transmission and Internet access. These applications require much higher data transmission rates than those currently used for voice transmission applications. To achieve these higher data rates, substantially larger bandwidths and higher carrier frequencies are required. A key roadblock to implementing these systems at K-band (18-26.5 GHz) and Ka-band (26.5-40 GHz) is the need to develop hardware which meets the requirements for high data rate transmission in a cost effective manner. In this chapter, we report on the status of tunable dielectric thin films for devices, such as resonators, filters, phased array antennas, and tunable oscillators, which utilize nonlinear tuning in the control elements. Paraelectric materials such as Barium Strontium Titanate ((Ba, Sr)TiO3) have dielectric constants which can be tuned by varying the magnitude of the electric field across the material. Therefore, these materials can be used to control the frequency and/or phase response of various devices such as electronically steerable phased array antennas, oscillators, and filters. Currently, tunable dielectric devices are being developed for applications which require high tunability, low loss, and good RF power-handling capabilities at microwave and millimeter-wave frequencies. These properties are strongly impacted by film microstructure and device design, and considerable developmental work is still required. However, in the last several years enormous progress has occurred in this field, validating the potential of tunable dielectric technology for broadband wireless communication applications. In this chapter we summarize how film processing techniques, microwave test configurations, and prototype devices have combined to drive the field to its current stage of development.

Heightened Background Cortical Synchrony in Patients With Epilepsy: EEG Phase Synchrony Analysis During Awake and Sleep Stages Using Novel Ensemble Measure.

PubMed

Nayak, Chetan S; Mariyappa, N; Majumdar, Kaushik K; Prasad, Pradeep D; Ravi, G S; Nagappa, M; Kandavel, Thennarasu; Taly, Arun B; Sinha, Sanjib

2018-05-01

Excessive cortical synchrony within neural ensembles has been implicated as an important mechanism driving epileptiform activity. The current study measures and compares background electroencephalographic (EEG) phase synchronization in patients having various types of epilepsies and healthy controls during awake and sleep stages. A total of 120 patients with epilepsy (PWE) subdivided into 3 groups (juvenile myoclonic epilepsy [JME], temporal lobe epilepsy [TLE], and extra-temporal lobe epilepsy [Ex-TLE]; n = 40 in each group) and 40 healthy controls were subjected to overnight polysomnography. EEG phase synchronization (SI) between the 8 EEG channels was assessed for delta, theta, alpha, sigma, and high beta frequency bands using ensemble measure on 10-second representative time windows and compared between patients and controls and also between awake and sleep stages. Mean ± SD of SI was compared using 2-way analysis of variance followed by pairwise comparison ( P ≤ .05). In both delta and theta bands, the SI was significantly higher in patients with JME, TLE, and Ex-TLE compared with controls, whereas in alpha, sigma, and high beta bands, SI was comparable between the groups. On comparison of SI between sleep stages, delta band: progressive increase in SI from wake ⇒ N1 ⇒ N2 ⇒ N3, whereas REM (rapid eye movement) was comparable to wake; theta band: decreased SI during N2 and increase during N3; alpha band: SI was highest in wake and lower in N1, N2, N3, and REM; and sigma and high beta bands: progressive increase in SI from wake ⇒ N1 ⇒ N2 ⇒ N3; however, sigma band showed lower SI during REM. This study found an increased background cortical synchronization in PWE compared with healthy controls in delta and theta bands during wake and sleep. This background hypersynchrony may be an important property of epileptogenic brain circuitry in PWE, which enables them to effortlessly generate a paroxysmal EEG depolarization shift.

User-Defined Material Model for Progressive Failure Analysis

NASA Technical Reports Server (NTRS)

Knight, Norman F. Jr.; Reeder, James R. (Technical Monitor)

2006-01-01

An overview of different types of composite material system architectures and a brief review of progressive failure material modeling methods used for structural analysis including failure initiation and material degradation are presented. Different failure initiation criteria and material degradation models are described that define progressive failure formulations. These progressive failure formulations are implemented in a user-defined material model (or UMAT) for use with the ABAQUS/Standard1 nonlinear finite element analysis tool. The failure initiation criteria include the maximum stress criteria, maximum strain criteria, the Tsai-Wu failure polynomial, and the Hashin criteria. The material degradation model is based on the ply-discounting approach where the local material constitutive coefficients are degraded. Applications and extensions of the progressive failure analysis material model address two-dimensional plate and shell finite elements and three-dimensional solid finite elements. Implementation details and use of the UMAT subroutine are described in the present paper. Parametric studies for composite structures are discussed to illustrate the features of the progressive failure modeling methods that have been implemented.

Tunable terahertz reflection spectrum based on band gaps of GaP materials excited by ultrasonic

NASA Astrophysics Data System (ADS)

Cui, H.; Zhang, X. B.; Wang, X. F.; Wang, G. Q.

2018-02-01

Tunable terahertz (THz) reflection spectrum, ranged from 0.2 to 8 THz, in band gaps of gallium phosphide (GaP) materials excited by ultrasonic is investigated in the present paper, in which tunable ultrasonic and terahertz wave collinear transmission in the same direction is postulated. Numerical simulation results show that, under the acousto-optic interaction, band gaps of transverse optical phonon polariton dispersion curves are turned on, this leads to a dis-propagation of polariton in GaP bulk. On the other side, GaP material has less absorption to THz wave according to experimental studies, as indicates that THz wave could be reflected by the band gaps spontaneously. The band gaps width and acousto-optic coupling strength are proportional with ultrasonic frequency and its intensity in ultrasonic frequency range of 0-250 MHz, in which low-frequency branch of transverse optical phonon polariton dispersion curves demonstrate periodicity and folding as well as. With the increase of ultrasonic frequency, frequency of band gap is blue-shifted, and total reflectivity decreased with -1-order and -2-order reflectivity decrease. The band gaps converge to the restrahlen band infinitely with frequency of ultrasonic exceeding over 250 MHz, total reflectivity of which is attenuated. As is show above, reflection of THz wave can be accommodated by regulating the frequency and its intensity of ultrasonic frequency. Relevant technology may be available in tunable THz frequency selection and filtering.

Cytotoxic effects of resin-modified orthodontic band adhesives. Are they safe?

PubMed

Malkoc, Siddik; Corekci, Bayram; Botsali, Hayriye Esra; Yalçin, Muhammet; Sengun, Abdülkadir

2010-09-01

To evaluate the cytotoxic effects of three different resin-modified orthodontic band adhesives. Three resin-modified orthodontic band adhesives (Bisco Ortho Band Paste LC, Multi-Cure Glass Ionomer Band Cement, and Transbond Plus Light Cure Band Adhesive) were prepared and the samples were extracted in 3 mL of Basal Medium Eagle with 10% newborn calf serum for 24 hours. The L929 cells were plated (25,000 cells/mL) in wells of 96-well dishes and maintained in a humidified incubator for 24 hours at 37 degrees C, 5% CO(2), and 95% air. After 24-hour incubation of the cells, the incubation medium was replaced by the immersed medium in which the samples were stored. Then L929 cells were incubated in contact with eluates for 24 hours. The cell mitochondrial activity was evaluated by the methyltetrazolium test. Twelve wells were used for each specimen, and methyltetrazolium tests were applied two times. The data were statistically analyzed using one-way analysis of variance and Tukey Honestly Significantly Different tests. Results with L929 fibroblasts demonstrated that all freshly prepared resin-modified orthodontic band adhesive materials reduced vital cell numbers (P > .05), in comparison to the control group. Our data demonstrate that all materials showed significant cytotoxicity compared to the control group. The results indicate that all materials showed significant cytotoxicity compared to the control group, and further studies using different test methods are needed for all resin-modified orthodontic band adhesives.

Origin of band gaps in graphene on hexagonal boron nitride

PubMed Central

Jung, Jeil; DaSilva, Ashley M.; MacDonald, Allan H.; Adam, Shaffique

2015-01-01

Recent progress in preparing well-controlled two-dimensional van der Waals heterojunctions has opened up a new frontier in materials physics. Here we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed on a hexagonal boron nitride substrate, demonstrating that they are produced by an interesting interplay between structural and electronic properties, including electronic many-body exchange interactions. Our theory is able to explain the observed gap behaviour by accounting first for the structural relaxation of graphene’s carbon atoms when placed on a boron nitride substrate, and then for the influence of the substrate on low-energy π-electrons located at relaxed carbon atom sites. The methods we employ can be applied to many other van der Waals heterojunctions. PMID:25695638

Double perovskites overtaking the single perovskites: A set of new solar harvesting materials with much higher stability and efficiency

NASA Astrophysics Data System (ADS)

Kangsabanik, Jiban; Sugathan, Vipinraj; Yadav, Anuradha; Yella, Aswani; Alam, Aftab

2018-05-01

Solar energy plays an important role in substituting the ever declining source of fossil fuel energy. Finding novel materials for solar cell applications is an integral part of photovoltaic research. Hybrid lead halide perovskites are one of, if not the most, well sought material in the photovoltaic research community. Its unique intrinsic properties, flexible synthesis techniques, and device fabrication architecture made the community highly buoyant over the past few years. Yet, there are two fundamental issues that still remain a concern, i.e., the stability in external environment and the toxicity due to Pb. This led to a search for alternative materials. More recently, double perovskite [A2B B'X6 (X =Cl, Br, I)] materials have emerged as a promising choice. Few experimental synthesis and high throughput computational studies have been carried out to check for promising candidates of this class. The main outcome from these studies, however, can essentially be summarized into two categories: (i) either they have an indirect band gap or (ii) a direct but large optical band gap, which is not suitable for solar devices. Here we propose a large set of stable double perovskite materials, Cs2B B 'X6 (X =Cl, Br, I), which show indirect to direct band gap transition via small Pb+2 doping at both B and B'sites. This is done by careful band (orbital) engineering using first-principles calculations. This kind of doping has helped to change the topology of the band structure, triggering an indirect to direct transition that is optically allowed. It also reduces the band gap significantly, bringing it well into the visible region. We also simulated the optical absorption spectra of these systems and found a comparable/higher absorption coefficient and solar efficiency with respect to the state of the art photovoltaic absorber material CH3NH3PbI3 . A number of materials Cs2(B0.75Pb0.25) (B0.75'Pb0.25) X6 (for various combinations of B ,B ', and X ) are found to be promising, some with better stability and solar efficiency than CH3NH3PbI3 , but with much less toxicity. Experimental characterization of one of the materials, Cs2(Ag0.75Pb0.25) (Bi0.75Pb0.25) Br6 , is carried out. The measured properties such as band gap and chemical stability agree fairly well with the theoretical predictions. This material is shown to be even more stable than CH3NH3PbI3 , both under sufficient humidity (˜55 %) and temperature (T =338 K), and hence has the potential to become a better candidate than the state of the art materials.

L-band InSAR Penetration Depth Experiment, North Slope Alaska

NASA Astrophysics Data System (ADS)

Muskett, R. R.

2017-12-01

Since the first spacecraft-based synthetic aperture radar (SAR) mission NASA's SEASAT in 1978 radars have been flown in Low Earth Orbit (LEO) by other national space agencies including the Canadian Space Agency, European Space Agency, India Space Research Organization and the Japanese Aerospace Exploration Agency. Improvements in electronics, miniaturization and production have allowed for the deployment of SAR systems on aircraft for usage in agriculture, hazards assessment, land-use management and planning, meteorology, oceanography and surveillance. LEO SAR systems still provide a range of needful and timely information on large and small-scale weather conditions like those found across the Arctic where ground-base weather radars currently provide limited coverage. For investigators of solid-earth deformation attention must be given to the atmosphere on Interferometric SAR (InSAR) by aircraft and spacecraft multi-pass operations. Because radar has the capability to penetrate earth materials at frequencies from the P- to X-band attention must be given to the frequency dependent penetration depth and volume scattering. This is the focus of our new research project: to test the penetration depth of L-band SAR/InSAR by aircraft and spacecraft systems at a test site in Arctic Alaska using multi-frequency analysis and progressive burial of radar mesh-reflectors at measured depths below tundra while monitoring environmental conditions. Knowledge of the L-band penetration depth on lowland Arctic tundra is necessary to constrain analysis of carbon mass balance and hazardous conditions arising form permafrost degradation and thaw, surface heave and subsidence and thermokarst formation at local and regional scales. Ref.: Geoscience and Environment Protection, vol. 5, no. 3, p. 14-30, 2017. DOI: 10.4236/gep.2017.53002.

Tailoring Thermal Conductivity of Single-stranded Carbon-chain Polymers through Atomic Mass Modification

PubMed Central

Liao, Quanwen; Zeng, Lingping; Liu, Zhichun; Liu, Wei

2016-01-01

Tailoring the thermal conductivity of polymers is central to enlarge their applications in the thermal management of flexible integrated circuits. Progress has been made over the past decade by fabricating materials with various nanostructures, but a clear relationship between various functional groups and thermal properties of polymers remains to be established. Here, we numerically study the thermal conductivity of single-stranded carbon-chain polymers with multiple substituents of hydrogen atoms through atomic mass modification. We find that their thermal conductivity can be tuned by atomic mass modifications as revealed through molecular dynamics simulations. The simulation results suggest that heavy homogeneous substituents do not assist heat transport and trace amounts of heavy substituents can in fact hinder heat transport substantially. Our analysis indicates that carbon chain has the biggest contribution (over 80%) to the thermal conduction in single-stranded carbon-chain polymers. We further demonstrate that atomic mass modifications influence the phonon bands of bonding carbon atoms, and the discrepancies of phonon bands between carbon atoms are responsible for the remarkable drops in thermal conductivity and large thermal resistances in carbon chains. Our study provides fundamental insight into how to tailor the thermal conductivity of polymers through variable substituents. PMID:27713563

Theory of Band Warping and its Effects on Thermoelectronic Transport Properties

NASA Astrophysics Data System (ADS)

Mecholsky, Nicholas; Resca, Lorenzo; Pegg, Ian; Fornari, Marco

2015-03-01

Transport properties of materials depend upon features of band structures near extrema in the BZ. Such features are generally described in terms of quadratic expansions and effective masses. Such expansions, however, are permissible only under strict conditions that are sometimes violated by materials. Suggestive terms such as ``band warping'' have been used to refer to such situations and ad hoc methods have been developed to treat them. We develop a generally applicable theory, based on radial expansions, and a corresponding definition of angular effective mass which also accounts for effects of band non-parabolicity and anisotropy. Further, we develop precise procedures to evaluate band warping quantitatively and as an example we analyze the warping features of valence bands in silicon using first-principles calculations and we compare those with semi-empirical models. We use our theory to generalize derivations of transport coefficients for cases of either single or multiple electronic bands, with either quadratically expansible or warped energy surfaces. We introduce the transport-equivalent ellipsoid and illustrate the drastic effects that band warping can induce on thermoelectric properties using multi-band models. Vitreous State Laboratory and Samsung's GRO program.

Stability of direct band gap under mechanical strains for monolayer MoS2, MoSe2, WS2 and WSe2

NASA Astrophysics Data System (ADS)

Deng, Shuo; Li, Lijie; Li, Min

2018-07-01

Single layer transition-metal dichalcogenides materials (MoS2, MoSe2, WS2 and WSe2) are investigated using the first-principles method with the emphasis on their responses to mechanical strains. All these materials display the direct band gap under a certain range of strains from compressive to tensile (stable range). We have found that this stable range is different for these materials. Through studying on their mechanical properties again using the first-principles approach, it is unveiled that this stable strain range is determined by the Young's modulus. More analysis on strains induced electronic band gap properties have also been conducted.

Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor.

PubMed

Lan, Yann-Wen; Torres, Carlos M; Tsai, Shin-Hung; Zhu, Xiaodan; Shi, Yumeng; Li, Ming-Yang; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L

2016-11-01

The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS 2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS 2 , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Generalized Ellipsometry on Complex Nanostructures and Low-Symmetry Materials

NASA Astrophysics Data System (ADS)

Mock, Alyssa Lynn

In this thesis, complex anisotropic materials are investigated and characterized by generalized ellipsometry. In recent years, anisotropic materials have gained considerable interest for novel applications in electronic and optoelectronic devices, mostly due to unique properties that originate from reduced crystal symmetry. Examples include white solid-state lighting devices which have become ubiquitous just recently, and the emergence of high-power, high-voltage electronic transistors and switches in all-electric vehicles. The incorporation of single crystalline material with low crystal symmetry into novel device structures requires reconsideration of existing optical characterization approaches. Here, the generalized ellipsometry concept is extended to include applications for materials with monoclinic and triclinic symmetries. A model eigendielectric displacement vector approach is developed, described and utilized to characterize monoclinic materials. Materials are investigated in spectral regions spanning from the far-infrared to the vacuum ultraviolet. Examples are demonstrated for phonon mode determination in cadmium tungstate and yttrium silicate and for band-to-band transitions in gallia (beta-Ga2O3) single crystals. Furthermore, the anisotropic optical properties of an emerging class of spatially coherent heterostructure materials with nanostructure dimensions are investigated. The so-called anisotropic effective medium approximation for slanted columnar thin films is extended to the concept of slanted columnar heterostructure thin films as well as core-shell heterostructure thin films. Examples include the determination of band-to-band transitions, phonon modes and oxidation properties of cobalt-oxide core shell structures and gas-liquid-solid distribution during controlled adsorption of organic solvents in silicon slanted columnar thin films.

Composition of bands in Argadnel Regio, Europa: Implications for Volcanic Resurfacing.

NASA Astrophysics Data System (ADS)

Prockter, L. M.; Shirley, J. H.; Dalton, J. B.; Kamp, L. W.

2012-04-01

Bands on Europa are dark or grey features which formed as a result of the pulling apart of cracks in Europa's surface, allowing new cryovolcanic material to be emplaced into the newly formed gaps. Bands have been shown to be sites of extensive resurfacing, and appear to have brightened over time, although the exact cause is not known. Thus the relative albedo of a band can be used as a proxy for age, as has been observed on Europa's surface, where the darkest bands crosscut, and are therefore younger than, lighter, or "grey" bands. We here combine Galileo Near-Infrared Mapping Spectrometer (NIMS) and Solid State Imager (SSI) data, using the methods of Shirley et al., [2010], to determine the surface compositions and water ice grain sizes of dark and grey bands in Europa's anti-Jovian Argadnel Regio, and to understand their relative histories. Preliminary results show that the total amount of hydrated salts modeled in the grey bands tends to be less than that seen in the dark bands (from ~19 to ~38% and ~38 to 47% respectively). One dark band contains hydrated sulfuric acid which is >5% lower than that of the surrounding ridged plains, as well as only 9% water ice of small grain size. These observations are interpreted as evidence that this band has been less processed by radiolysis, and so is relatively young or has been recently resurfaced. Relatively larger ice grain sizes are observed in the grey bands, as might be expected if they are older than the dark bands, and all the bands contain less large-grained ice than the surrounding ridged plains, thought to be the oldest unit on Europa's surface. We also find a wedge-shaped band that exhibits a different composition across its northern part, and appears to have undergone resurfacing as the result of the formation of a large, shallow trough that cuts diagonally across the band. We speculate that this resurfacing could be due to processes such as (1) the removal of frost due to surface shaking during the tectonic event, resulting in lower albedo material being revealed; (2) the emplacement of fine-grained plume or similar material due to a cryovolcanic eruption on the wedge floor; or (3) because the fault forming the southwestern wall of the depression intersected a near-surface briny reservoir, such as has been suggested to exist on Europa, enabling low-albedo material to be emplaced onto the floor of the depression, thereby darkening the wedge and modifying its surface composition. Reference: [1] Shirley J.H. et al. (2010) Icarus, 210, 358-384.

Kohn-Sham Band Structure Benchmark Including Spin-Orbit Coupling for 2D and 3D Solids

NASA Astrophysics Data System (ADS)

Huhn, William; Blum, Volker

2015-03-01

Accurate electronic band structures serve as a primary indicator of the suitability of a material for a given application, e.g., as electronic or catalytic materials. Computed band structures, however, are subject to a host of approximations, some of which are more obvious (e.g., the treatment of the exchange-correlation of self-energy) and others less obvious (e.g., the treatment of core, semicore, or valence electrons, handling of relativistic effects, or the accuracy of the underlying basis set used). We here provide a set of accurate Kohn-Sham band structure benchmarks, using the numeric atom-centered all-electron electronic structure code FHI-aims combined with the ``traditional'' PBE functional and the hybrid HSE functional, to calculate core, valence, and low-lying conduction bands of a set of 2D and 3D materials. Benchmarks are provided with and without effects of spin-orbit coupling, using quasi-degenerate perturbation theory to predict spin-orbit splittings. This work is funded by Fritz-Haber-Institut der Max-Planck-Gesellschaft.

Switchable S = 1/2 and J = 1/2 Rashba bands in ferroelectric halide perovskites

PubMed Central

Kim, Minsung; Im, Jino; Freeman, Arthur J.; Ihm, Jisoon; Jin, Hosub

2014-01-01

The Rashba effect is spin degeneracy lift originated from spin–orbit coupling under inversion symmetry breaking and has been intensively studied for spintronics applications. However, easily implementable methods and corresponding materials for directional controls of Rashba splitting are still lacking. Here, we propose organic–inorganic hybrid metal halide perovskites as 3D Rashba systems driven by bulk ferroelectricity. In these materials, it is shown that the helical direction of the angular momentum texture in the Rashba band can be controlled by external electric fields via ferroelectric switching. Our tight-binding analysis and first-principles calculations indicate that and Rashba bands directly coupled to ferroelectric polarization emerge at the valence and conduction band edges, respectively. The coexistence of two contrasting Rashba bands having different compositions of the spin and orbital angular momentum is a distinctive feature of these materials. With recent experimental evidence for the ferroelectric response, the halide perovskites will be, to our knowledge, the first practical realization of the ferroelectric-coupled Rashba effect, suggesting novel applications to spintronic devices. PMID:24785294

K-Band Latching Switches

NASA Technical Reports Server (NTRS)

Piotrowski, W. S.; Raue, J. E.

1984-01-01

Design, development, and tests are described for two single-pole-double-throw latching waveguide ferrite switches: a K-band switch in WR-42 waveguide and a Ka-band switch in WR-28 waveguide. Both switches have structurally simple junctions, mechanically interlocked without the use of bonding materials; they are impervious to the effects of thermal, shock, and vibration stresses. Ferrite material for the Ka-band switch with a proper combination of magnetic and dielectric properties was available and resulted in excellent low loss, wideband performance. The high power handling requirement of the K-band switch limited the choice of ferrite to nickel-zinc compositions with adequate magnetic properties, but with too low relative dielectric constant. The relative dielectric constant determines the junction dimensions for given frequency responses. In this case the too low value unavoidably leads to a larger than optimum junction volume, increasing the insertion loss and restricting the operating bandwidth. Efforts to overcome the materials-related difficulties through the design of a composite junction with increased effective dielectric properties efforts to modify the relative dielectric constant of nickel-zinc ferrite are examined.

Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

NASA Astrophysics Data System (ADS)

Horsley, Kimberly Anne

Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining a wide surface band gap, as seen in Cu-poor films. A novel absorber was prepared Cu-rich with a final In-Se treatment to produce a Cu-poor surface, and compared directly to Cu-poor and Cu-rich produced samples. Despite reduced Cu at the surface, the novel absorber was found to have a surface band gap similar to that of traditional, Cu-poor grown absorbers. Furthermore, estimation of the near-surface bulk band gap suggests a narrowing of the band gap away from the surface, similar to highly efficient, Cu-poor grown absorbers. Long-term degradation is another concern facing solar cells, as heat and moistures stress can result in reduced efficiencies over time. The interface of the back contact material and absorber layer in (Au/Cu)/CdTe/CdS thin-film structures from the University of Toledo were investigated after a variety of accelerated stress treatments with the aim of further understanding the chemical and/or electronic degradation of this interface. Sulfur migration to the back contact was observed, along with the formation of Au-S and Cu-S bonds. A correlation between heat stress under illumination and the formation of Cu-Cl bonds was also found. Nanocomposite materials hold promise as a next-generation photovoltaic material and for use in LED devices, due in part to the unique ability to tune the absorption edge of the film by adjusting the semiconductor particle size, and the prospective for long-range charge-carrier (exciton) transport through the wide band gap matrix material. Thin films of CdTe were sputter deposited onto ZnO substrates at the University of Arizona and studied before and after a short, high temperature annealing to further understand the effects of annealing on the CdTe/ZnO interface. A clumping of the CdTe layer and the formation of Cd- and Te-oxides was observed using surface microscopy and photoelectron spectroscopy techniques. These findings help to evaluate post-deposition annealing as a treatment to adjust the final crystallinity and optoelectronic properties of these films. Through publication and/or discussion with collaborators, each project presented in this dissertation contributed to the understanding of the chemical and electronic properties of the material surface, near-surface bulk, and/or interfaces formed. The information gained on these unique chalcogenide materials will assist in designing more efficient and successful optoelectronic devices for the next generation of solar cells and LEDs.

Research progress of cholesteric liquid crystals with broadband reflection characteristics in application of intelligent optical modulation materials

NASA Astrophysics Data System (ADS)

Zhang, Lan-Ying; Gao, Yan-Zi; Song, Ping; Wu, Xiao-Juan; Yuan, Xiao; He, Bao-Feng; Chen, Xing-Wu; Hu, Wang; Guo, Ren-Wei; Ding, Hang-Jun; Xiao, Jiu-Mei; Yang, Huai

2016-09-01

Cholesteric liquid crystals (CLCs) have recently sparked an enormous amount of interest in the development of soft matter materials due to their unique ability to self-organize into a helical supra-molecular architecture and their excellent selective reflection of light based on the Bragg relationship. Nowadays, by the virtue of building the self-organized nanostructures with pitch gradient or non-uniform pitch distribution, extensive work has already been performed to obtain CLC films with a broad reflection band. Based on authors’ many years’ research experience, this critical review systematically summarizes the physical and optical background of the CLCs with broadband reflection characteristics, methods to obtain broadband reflection of CLCs, as well as the application in the field of intelligent optical modulation materials. Combined with the research status and the advantages in the field, the important basic and applied scientific problems in the research direction are also introduced. Project supported by the National Natural Science Foundation of China (Grant Nos. 51573006, 51573003, 51203003, 51303008, 51302006, 51402006, 51272026, and 51273022), the Major Project of Beijing Science and Technology Program, China (Grant Nos. Z151100003315023 and Z141100003814011), and the Fok Ying Tung Education Foundation, China (Grant No. 142009).

Recent Progress on Antimonene: A New Bidimensional Material.

PubMed

Ares, Pablo; Palacios, Juan José; Abellán, Gonzalo; Gómez-Herrero, Julio; Zamora, Félix

2018-01-01

Antimonene, defined in sensu stricto as a single layer of antimony atoms, is recently the focus of numerous theoretical works predicting a variety of interesting properties and is quickly attracting the attention of the scientific community. However, what places antimonene in a different category from other 2D crystals is its strong spin-orbit coupling and a drastic evolution of its properties from the monolayer to the few-layer system. The recent isolation of this novel 2D material pushes the interest for antimonene even further. Here, a review of both theoretical predictions and experimental results is compiled. First, an account of the calculations anticipating an electronic band structure suitable for optoelectronics and thermoelectric applications in monolayer form and a topological semimetal in few-layer form is given. Second, the different approaches to produce antimonene-mechanical and liquid phase exfoliation, and epitaxial growth methods-are reviewed. In addition, this work also reports the main characterization techniques used to study this exotic material. This review provides insights for further exploring the appealing properties of antimonene and puts forward the opportunities and challenges for future applications from (opto)electronic device fabrication to biomedicine. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?

PubMed

Wu, Dan-Dan; Liu, Qing-Bo; Fu, Hua-Hua; Wu, Ruqian

2017-11-30

The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics. In the traditional device designs of spin-dependent Seebeck rectifiers and diodes, finite spin-dependent band gaps of materials are required to realize the on-off characteristic in thermal spin currents, and nearly zero charge current should be achieved to reduce energy dissipation. Here, we propose that two ferromagnetic zigzag γ-graphyne nanoribbons (ZγGNRs) without any spin-dependent band gaps around the Fermi level can not only exhibit the SDSE, but also display rectifier and diode effects in thermal spin currents characterized by threshold temperatures, which originates from the compensation effect occurring in spin-dependent transmissions but not from the spin-splitting band gaps in materials. The metallic characteristics of ZγGNRs bring about an advantage that the gate voltage is an effective route to adjust the symmetry of spin-splitting bands to obtain pure thermal spin currents. The results provide a new mechanism to realize spin-Seebeck rectifier and diode effects in 2D materials and expand material candidates towards spin-Seebeck device applications.

Canopy reflectance related to marsh dieback onset and progression in Coastal Louisiana

USGS Publications Warehouse

Ramsey, Elijah W.; Rangoonwala, A.

2006-01-01

In this study, we extended previous work linking leaf spectral changes, dieback onset, and progression of Spartina alterniflora marshes to changes in site-specific canopy reflectance spectra. First, we obtained canopy reflectance spectra (approximately 20 m ground resolution) from the marsh sites occupied during the leaf spectral analyses and from additional sites exhibiting visual signs of dieback. Subsequently, the canopy spectra were analyzed at two spectral scales: the first scale corresponded to whole-spectra sensors, such as the NASA Earth Observing-1 (EO-1) Hyperion, and the second scale corresponded to broadband spectral sensors, such as the EO-1 Advanced Land Imager and the Landsat Enhanced Thematic Mapper. In the whole-spectra analysis, spectral indicators were generated from the whole canopy spectra (about 400 nm to 1,000 nm) by extracting typical dead and healthy marsh spectra, and subsequently using them to determine the percent composition of all canopy reflectance spectra. Percent compositions were then used to classify canopy spectra at each field site into groups exhibiting similar levels of dieback progression ranging from relatively healthy to completely dead. In the broadband reflectance analysis, blue, green, red, red-edge, and near infrared (NIR) spectral bands and NIR/green and NIR/red transforms were extracted from the canopy spectra. Spectral band and band transform indicators of marsh dieback and progression were generated by relating them to marsh status indicators derived from classifications of the 35 mm slides collected at the same time as the canopy reflectance recordings. The whole spectra and broadband spectral indicators were both able to distinguish (a) healthy marsh, (b) live marsh impacted by dieback, and (c) dead marsh, and they both provided some discrimination of dieback progression. Whole-spectra resolution sensors like the EO-1 Hyperion, however, offered an enhanced ability to categorize dieback progression. ?? 2006 American Society for Photogrammetry and Remote Sensing.

Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

NASA Astrophysics Data System (ADS)

Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

2012-09-01

A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously considered inaccessible.

Memory Device and Nanofabrication Techniques Using Electrically Configurable Materials

NASA Astrophysics Data System (ADS)

Ascenso Simões, Bruno

Development of novel nanofabrication techniques and single-walled carbon nanotubes field configurable transistor (SWCNT-FCT) memory devices using electrically configurable materials is presented. A novel lithographic technique, electric lithography (EL), that uses electric field for pattern generation has been demonstrated. It can be used for patterning of biomolecules on a polymer surface and patterning of resist as well. Using electrical resist composed of a polymer having Boc protected amine group and iodonium salt, Boc group on the surface of polymer was modified to free amine by applying an electric field. On the modified surface of the polymer, Streptavidin pattern was fabricated with a sub-micron scale. Also patterning of polymer resin composed of epoxy monomers and diaryl iodonium salt by EL has been demonstrated. Reaction mechanism for electric resist configuration is believed to be induced by an acid generation via electrochemical reduction in the resist. We show a novel field configurable transistor (FCT) based on single-walled carbon nanotube network field-effect transistors in which poly (ethylene glycol) crosslinked by electron-beam is incorporated into the gate. The device conductance can be configured to arbitrary states reversibly and repeatedly by applying external gate voltages. Raman spectroscopy revealed that evolution of the ratio of D- to G-band intensity in the SWCNTs of the FCT progressively increases as the device is configured to lower conductance states. Electron transport studies at low temperatures showed a strong temperature dependence of the resistance. Band gap widening of CNTs up to ˜ 4 eV has been observed by examining the differential conductance-gate voltage-bias voltage relationship. The switching mechanism of the FCT is attributed a structural transformation of CNTs via reversible hydrogenation and dehydrogenations induced by gate voltages, which tunes the CNT bandgap continuously and reversibly to non-volatile analog values. The CNT transistors with field tunable band gaps would facilitate field programmable circuits based on the self-organized CNTs, and might also lead to novel analog memory, neuromorphic, and photonic devices.

Laser-induced optical breakdown spectroscopy of polymer materials based on evaluation of molecular emission bands

NASA Astrophysics Data System (ADS)

Trautner, Stefan; Jasik, Juraj; Parigger, Christian G.; Pedarnig, Johannes D.; Spendelhofer, Wolfgang; Lackner, Johannes; Veis, Pavel; Heitz, Johannes

2017-03-01

Laser-induced breakdown spectroscopy (LIBS) for composition analysis of polymer materials results in optical spectra containing atomic and ionic emission lines as well as molecular emission bands. In the present work, the molecular bands are analyzed to obtain spectroscopic information about the plasma state in an effort to quantify the content of different elements in the polymers. Polyethylene (PE) and a rubber material from tire production are investigated employing 157 nm F2 laser and 532 nm Nd:YAG laser ablation in nitrogen and argon gas background or in air. The optical detection reaches from ultraviolet (UV) over the visible (VIS) to the near infrared (NIR) spectral range. In the UV/VIS range, intense molecular emissions, C2 Swan and CN violet bands, are measured with an Echelle spectrometer equipped with an intensified CCD camera. The measured molecular emission spectra can be fitted by vibrational-rotational transitions by open access programs and data sets with good agreement between measured and fitted spectra. The fits allow determining vibrational-rotational temperatures. A comparison to electronic temperatures Te derived earlier from atomic carbon vacuum-UV (VUV) emission lines show differences, which can be related to different locations of the atomic and molecular species in the expanding plasma plume. In the NIR spectral region, we also observe the CN red bands with a conventional CDD Czerny Turner spectrometer. The emission of the three strong atomic sulfur lines between 920 and 925 nm is overlapped by these bands. Fitting of the CN red bands allows a separation of both spectral contributions. This makes a quantitative evaluation of sulfur contents in the start material in the order of 1 wt% feasible.

Ultrathin 2D Photocatalysts: Electronic-Structure Tailoring, Hybridization, and Applications.

PubMed

Di, Jun; Xiong, Jun; Li, Huaming; Liu, Zheng

2018-01-01

As a sustainable technology, semiconductor photocatalysis has attracted considerable interest in the past several decades owing to the potential to relieve or resolve energy and environmental-pollution issues. By virtue of their unique structural and electronic properties, emerging ultrathin 2D materials with appropriate band structure show enormous potential to achieve efficient photocatalytic performance. Here, the state-of-the-art progress on ultrathin 2D photocatalysts is reviewed and a critical appraisal of the classification, controllable synthesis, and formation mechanism of ultrathin 2D photocatalysts is presented. Then, different strategies to tailor the electronic structure of ultrathin 2D photocatalysts are summarized, including component tuning, thickness tuning, doping, and defect engineering. Hybridization with the introduction of a foreign component and maintaining the ultrathin 2D structure is presented to further boost the photocatalytic performance, such as quantum dots/2D materials, single atoms/2D materials, molecular/2D materials, and 2D-2D stacking materials. More importantly, the advancement of versatile photocatalytic applications of ultrathin 2D photocatalysts in the fields of water oxidation, hydrogen evolution, CO 2 reduction, nitrogen fixation, organic syntheses, and removal pollutants is discussed. Finally, the future opportunities and challenges regarding ultrathin 2D photocatalysts to bring about new opportunities for future research in the field of photocatalysis are also presented. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photonic band structures of two-dimensional magnetized plasma photonic crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, L.

By using modified plane wave method, photonic band structures of the transverse electric polarization for two types of two-dimensional magnetized plasma photonic crystals are obtained, and influences of the external magnetic field, plasma density, and dielectric materials on the dispersion curves are studied, respectively. Results show that two areas of flat bands appear in the dispersion curves due to the role of external magnetic field, and the higher frequencies of the up and down flat bands are corresponding to the right-circled and left-circled cutoff frequencies, respectively. Adjusting external magnetic field and plasma density can not only control positions of themore » flat bands, but also can control the location and width of the local gap; increasing relative dielectric constant of the dielectric materials makes omni-direction gaps appear.« less

Transition-metal-substituted indium thiospinels as novel intermediate-band materials: prediction and understanding of their electronic properties.

PubMed

Palacios, P; Aguilera, I; Sánchez, K; Conesa, J C; Wahnón, P

2008-07-25

Results of density-functional calculations for indium thiospinel semiconductors substituted at octahedral sites with isolated transition metals (M=Ti,V) show an isolated partially filled narrow band containing three t2g-type states per M atom inside the usual semiconductor band gap. Thanks to this electronic structure feature, these materials will allow the absorption of photons with energy below the band gap, in addition to the normal light absorption of a semiconductor. To our knowledge, we demonstrate for the first time the formation of an isolated intermediate electronic band structure through M substitution at octahedral sites in a semiconductor, leading to an enhancement of the absorption coefficient in both infrared and visible ranges of the solar spectrum. This electronic structure feature could be applied for developing a new third-generation photovoltaic cell.

Forces directing germ-band extension in Drosophila embryos.

PubMed

Kong, Deqing; Wolf, Fred; Großhans, Jörg

2017-04-01

Body axis elongation by convergent extension is a conserved developmental process found in all metazoans. Drosophila embryonic germ-band extension is an important morphogenetic process during embryogenesis, by which the length of the germ-band is more than doubled along the anterior-posterior axis. This lengthening is achieved by typical convergent extension, i.e. narrowing the lateral epidermis along the dorsal-ventral axis and simultaneous extension along the anterior-posterior axis. Germ-band extension is largely driven by cell intercalation, whose directionality is determined by the planar polarity of the tissue and ultimately by the anterior-posterior patterning system. In addition, extrinsic tensile forces originating from the invaginating endoderm induce cell shape changes, which transiently contribute to germ-band extension. Here, we review recent progress in understanding of the role of mechanical forces in germ-band extension. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

Design on compatible stealth photonic crystal of nearmiddle infrared and 1.06 μm laser

NASA Astrophysics Data System (ADS)

Zhang, Ji-kui; Wang, Jia-Chun; Wang, Qi-Chao

2016-01-01

In the near and middle infrared atmospheric window, infrared stealth material require a low absorptivity (which means a low emissivity according to Kirchhoff's law of black body), at the same time, it also requires high absorptivity so as to decrease the reflectance at military laser wavelength of 1.06μm. Under this circumstances, compatible stealth of infrared and laser is an urgent demand, but the demand is ambivalent for conventional materials. Photonic crystal (PC), as a new type of artificial periodic structure function material, can realize broadband thermal infrared stealth based on its high-reflection photon forbidden band(also called photonic band gap). The high-reflection photon forbidden band of PC can be adjusted to near and middle infrared wave band through some rational methods. When a defect was added into the periodic structure of PC, a "hole-digging" reflection spectrum, which is high absorption at military laser wavelength of 1.06μm, can be achieved, so compatible stealth of near and middle infrared and military laser wavelength of 1.06μm can be achieved too. In this paper, we selected near and middle infrared-transparent materials, Te and MgF2 , as high refractive index and low refractive index material respectively, and designed a one-dimensional one-defect-mode PC whose photon forbidden band was broadened to 1-5μm by constructing two photonic crystals into one. The optical property of the PC was calculated by Transfer matrix method(TMM) of thin-film optical theory, and the results shows that the as-designed PC has a high spectral reflectance in the near and middle infrared band, among which the reflectivity in 1.68μm 5.26μm band reached more than 90%, and the 2.48 5.07μm band even reached 99.99%. The result also shows that between the band gap of 1-5μm, there are one defect mode locating in the wavelength of 1.06μm, whose reflectance is below 0.70%, which means its spectral absorptivity is greater than 99.30%. All the above we have discussed proved that this "hole-digging spectrum" PC can realize the compatible stealth of near and middle infrared and 1.06μm military laser.

Direct observation of mode-specific phonon-band gap coupling in methylammonium lead halide perovskites.

PubMed

Kim, Heejae; Hunger, Johannes; Cánovas, Enrique; Karakus, Melike; Mics, Zoltán; Grechko, Maksim; Turchinovich, Dmitry; Parekh, Sapun H; Bonn, Mischa

2017-09-25

Methylammonium lead iodide perovskite is an outstanding semiconductor for photovoltaics. One of its intriguing peculiarities is that the band gap of this perovskite increases with increasing lattice temperature. Despite the presence of various thermally accessible phonon modes in this soft material, the understanding of how precisely these phonons affect macroscopic material properties and lead to the peculiar temperature dependence of the band gap has remained elusive. Here, we report a strong coupling of a single phonon mode at the frequency of ~ 1 THz to the optical band gap by monitoring the transient band edge absorption after ultrafast resonant THz phonon excitation. Excitation of the 1 THz phonon causes a blue shift of the band gap over the temperature range of 185 ~ 300 K. Our results uncover the mode-specific coupling between one phonon and the optical properties, which contributes to the temperature dependence of the gap in the tetragonal phase.Methylammonium lead iodide perovskite, a promising material for efficient photovoltaics, shows a unique temperature dependence of its optical properties. Kim et al. quantify the coupling between the optical gap and a lattice phonon at 1 THz, which favorably contributes to the thermal variation of the gap.

Band-Limited Masks and Direct Imaging of Exoplanets

NASA Technical Reports Server (NTRS)

Kuchner, Marc J.

2009-01-01

Band-limited masks have become the baseline design for what is now called "classical TPF" and also the N|RCamcomnagraphonJW8 .This technology remains one of the most promising paths for direct detection ofmxop|anedm and disks. I'll describe some of the latest progress in the implementation of this technique and what we have learned about where it can and can not be effectively applied.

Advances in nonlinear optical materials and devices

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1991-01-01

The recent progress in the application of nonlinear techniques to extend the frequency of laser sources has come from the joint progress in laser sources and in nonlinear materials. A brief summary of the progress in diode pumped solid state lasers is followed by an overview of progress in nonlinear frequency extension by harmonic generation and parametric processes. Improved nonlinear materials including bulk crystals, quasiphasematched interactions, guided wave devices, and quantum well intersubband studies are discussed with the idea of identifying areas of future progress in nonlinear materials and devices.

Metallic behavior in the graphene analogue Ni 3(HITP) 2 and a strategy to render the material a semiconductor.

DOE PAGES

Foster, Michael E.; Sohlberg, Karl; Spataru, Dan Catalin; ...

2016-06-19

The metal organic framework material Ni 3(2,3,6,7,10,11 - hexaiminotriphenylene) 2, (Ni 3(HITP) 2) is composed of layers of extended conjugated planes analogous to graphene. We carried out Density functional theory (DFT) calculations to model the electronic structure of bulk and monolayer Ni 3(HITP) 2. The layered 3D material is metallic, similar to graphene. Our calculations predict that there is appreciable band dispersion not only in-plane, but perpendicular to the stacking planes as well, suggesting that, unlike graphene, the conductivity may be nearly isotropic. In contrast, a 2D monolayer of the material exhibits a band gap, consistent with previously published results.more » Insight obtained from studies of the evolution of the material from semiconducting to metallic as the material is transitioned from 2D to 3D suggests the possibility of modifying the material to render it semiconducting by changing the metal center and inserting spacer moieties between the layers. Furthermore, the DFT calculations predict that the modified material will be structurally stable and exhibit a band gap.« less

Modal expansions in periodic photonic systems with material loss and dispersion

NASA Astrophysics Data System (ADS)

Wolff, Christian; Busch, Kurt; Mortensen, N. Asger

2018-03-01

We study band-structure properties of periodic optical systems composed of lossy and intrinsically dispersive materials. To this end, we develop an analytical framework based on adjoint modes of a lossy periodic electromagnetic system and show how the problem of linearly dependent eigenmodes in the presence of material dispersion can be overcome. We then formulate expressions for the band-structure derivative (∂ ω )/(∂ k ) (complex group velocity) and the local and total density of transverse optical states. Our exact expressions hold for 3D periodic arrays of materials with arbitrary dispersion properties and in general need to be evaluated numerically. They can be generalized to systems with two, one, or no directions of periodicity provided the fields are localized along nonperiodic directions. Possible applications are photonic crystals, metamaterials, metasurfaces composed of highly dispersive materials such as metals or lossless photonic crystals, and metamaterials or metasurfaces strongly coupled to resonant perturbations such as quantum dots or excitons in 2D materials. For illustration purposes, we analytically evaluate our expressions for some simple systems consisting of lossless dielectrics with one sharp Lorentzian material resonance added. By combining several Lorentz poles, this provides an avenue to perturbatively treat quite general material loss bands in photonic crystals.

Fabrication of photonic band gap materials

DOEpatents

Constant, Kristen; Subramania, Ganapathi S.; Biswas, Rana; Ho, Kai-Ming

2002-01-15

A method for forming a periodic dielectric structure exhibiting photonic band gap effects includes forming a slurry of a nano-crystalline ceramic dielectric or semiconductor material and monodisperse polymer microspheres, depositing a film of the slurry on a substrate, drying the film, and calcining the film to remove the polymer microspheres therefrom. The film may be cold-pressed after drying and prior to calcining. The ceramic dielectric or semiconductor material may be titania, and the polymer microspheres may be polystyrene microspheres.

Electronic and optical properties of mixed Be-chalcogenides

NASA Astrophysics Data System (ADS)

Khan, Imad; Ahmad, Iftikhar; Zhang, D.; Rahnamaye Aliabad, H. A.; Jalali Asadabadi, S.

2013-02-01

The electronic and optical properties of BeSxSe1-x, BeSxTe1-x and BeSexTe1-x, (0≤x≤1) are studied using the highly accurate modified Beck and Johnson (mBJ) potential. The binary Be-chalcogenides are wide and indirect band gap semiconductors and hence they are not efficient materials for optoelectronics. In order to modify them into optically active materials, the anion chalcogen atoms are partially replaced by other chalcogen atoms like BeSxSe1-x, BeSxTe1-x and BeSexTe1-x (0≤x≤1). The modified ternary compounds are of direct band gap nature and hence they are optically active. Some of these direct band gap materials are lattice matched with silicon and can possibly replace Si in semiconductor devices. Keeping in view the importance of these materials in optoelectronics, the optical properties of BeSxSe1-x, BeSxTe1-x and BeSexTe1-x in the full composition range are investigated. It is found that these materials are transparent in the IR, visible and near UV spectral regions. The alloys for the most of the concentrations have band gaps larger than 3 eV, so it is expected that they may be efficient materials for blue, green and UV light emitting diodes.

Optic nerve compression as a late complication of a hydrogel explant with silicone encircling band.

PubMed

Crama, Niels; Kluijtmans, Leo; Klevering, B Jeroen

2018-06-01

To present a complication of compressive optic neuropathy caused by a swollen hydrogel explant and posteriorly displaced silicone encircling band. A 72-year-old female patient presented with progressive visual loss and a tilted optic disc. Her medical history included a retinal detachment in 1993 that was treated with a hydrogel explant under a solid silicone encircling band. Visual acuity had decreased from 6/10 to 6/20 and perimetry showed a scotoma in the temporal superior quadrant. On Magnetic Resonance Imaging (MRI), compression of the optic nerve by a displaced silicone encircling band inferior nasally in combination with a swollen episcleral hydrogel explant was observed. Surgical removal of the hydrogel explant and silicone encircling band was uneventful and resulted in improvement of visual acuity and visual field loss. This is the first report on compressive optic neuropathy caused by swelling of a hydrogel explant resulting in a dislocated silicone encircling band. The loss of visual function resolved upon removal of the explant and encircling band.

Testing Plastic Deformations of Materials in the Introductory Undergraduate Mechanics Laboratory

ERIC Educational Resources Information Center

Romo-Kroger, C. M.

2012-01-01

Normally, a mechanics laboratory at the undergraduate level includes an experiment to verify compliance with Hooke's law in materials, such as a steel spring and an elastic rubber band. Stress-strain curves are found for these elements. Compression in elastic bands is practically impossible to achieve due to flaccidity. A typical experiment for…

Uncertainty relations and topological-band insulator transitions in 2D gapped Dirac materials

NASA Astrophysics Data System (ADS)

Romera, E.; Calixto, M.

2015-05-01

Uncertainty relations are studied for a characterization of topological-band insulator transitions in 2D gapped Dirac materials isostructural with graphene. We show that the relative or Kullback-Leibler entropy in position and momentum spaces, and the standard variance-based uncertainty relation give sharp signatures of topological phase transitions in these systems.

Band-engineering of TiO2 as a wide-band gap semiconductor using organic chromophore dyes

NASA Astrophysics Data System (ADS)

Wahyuningsih, S.; Kartini, I.; Ramelan, A. H.; Saputri, L. N. M. Z.; Munawaroh, H.

2017-07-01

Bond-engineering as applied to semiconductor materials refers to the manipulation of the energy bands in order to control charge transfer processes in a device. When the device in question is a photoelectrochemical cell, the charges affected by drift become the focus of the study. The ideal band gap of semiconductors for enhancement of photocatalyst activity can be lowered to match with visible light absorption and the location of conduction Band (CB) should be raised to meet the reducing capacity. Otherwise, by the addition of the chromofor organic dyes, the wide-band gab can be influences by interacation resulting between TiO2 surface and the dyes. We have done the impruvisation wide-band gap of TiO2 by the addition of organic chromophore dye, and the addition of transition metal dopand. The TiO2 morphology influence the light absorption as well as the surface modification. The organic chromophore dye was syntesized by formation complexes compound of Co(PAR)(SiPA)(PAR)= 4-(2-piridylazoresorcinol), SiPA = Silyl propil amine). The result showed that the chromophore groups adsorbed onto TiO2 surface can increase the visible light absorption of wide-band gab semiconductor. Initial absorption of a chromophore will affect light penetration into the material surfaces. The use of photonic material as a solar cell shows this phenomenon clearly from the IPCE (incident photon to current conversion efficiency) measurement data. Organic chromophore dyes of Co(PAR)(SiPA) exhibited the long wavelength absorption character compared to the N719 dye (from Dyesol).

Formation of Cu-type shear bands and their influence on deformation and texture of rolled f.c.c. {l_brace}112{r_brace}<111> single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wagner, P.; Engler, O.; Luecke, K.

1995-10-01

Microstructural and textural evolution during rolling were investigated in (112)[11{bar 1}] single crystals of Al, Cu, and homogeneous supersaturated Al1.8wt%Cu. After a rolling degree of 30% the initial C-orientation (112)[11{bar 1}] of all three materials has rotated towards the so called D-orientation (4411)[1111{bar 8}]. While in the non-shear banding Al the D-orientation remains stable up to high rolling degrees, in the shear banding materials Cu and Al-Cu it rotates back to the initial C-orientation simultaneously with the formation of shear bands. This orientation change is explained by a rigid body rotation due to the special geometry of a deformation withmore » unidirectional shear bands. With the onset of shear band formation also strong orientation scatterings about the transverse direction appear in the pole figures. These scatterings are located inside the shear bands as well as their vicinity. They are due to the strong shear deformation and the resulting reaction stresses occurring in the shear bands and in their vicinity, respectively.« less

Band-edges and band-gap in few-layered transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Bhunia, Hrishikesh; Pal, Amlan J.

2018-05-01

We have considered liquid-exfoliated transition metal dichalcogenides (WS2, WSe2, MoS2, and MoSe2) and studied their band-edges and band-gap through scanning tunneling spectroscopy (STS) and density of states. A monolayer, bilayer (2L), and trilayer (3L) of each of the layered materials were characterized to derive the energies. Upon an increase in the number of layers, both the band-edges were found to shift towards the Fermi energy. The results from the exfoliated nanosheets have been compared with reported STS studies of MoS2 and WSe2 formed through chemical vapor deposition or molecular beam epitaxy methods; an uncontrolled lattice strain existed in such 2L and 3L nanoflakes due to mismatch in stacking-patterns between the monolayers affecting their energies. In the present work, the layers formed through the liquid-exfoliation process retained their interlayer coupling or stacking-sequence prevalent to the bulk and hence allowed determination of band-energies in these strain-free two-dimensional materials.

Cobalt (II) oxide and nickel (II) oxide alloys as potential intermediate-band semiconductors: A theoretical study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alidoust, Nima; Lessio, Martina; Carter, Emily A., E-mail: eac@princeton.edu

2016-01-14

Solar cells based on single pn junctions, employing single-gap semiconductors can ideally achieve efficiencies as high as 34%. Developing solar cells based on intermediate-band semiconductors (IBSCs), which can absorb light across multiple band gaps, is a possible way to defy this theoretical limit and achieve efficiencies as high as 60%. Here, we use first principles quantum mechanics methods and introduce CoO and Co{sub 0.25}Ni{sub 0.75}O as possible IBSCs. We show that the conduction band in both of these materials is divided into two distinct bands separated by a band gap. We further show that the lower conduction band (i.e., themore » intermediate band) is wider in Co{sub 0.25}Ni{sub 0.75}O compared with CoO. This should enhance light absorption from the valence band edge to the intermediate band, making Co{sub 0.25}Ni{sub 0.75}O more appropriate for use as an IBSC. Our findings provide the basis for future attempts to partially populate the intermediate band and to reduce the lower band gap in Co{sub 0.25}Ni{sub 0.75}O in order to enhance the potential of this material for use in IBSC solar cell technologies. Furthermore, with proper identification of heterojunctions and dopants, CoO and Co{sub 0.25}Ni{sub 0.75}O could be used in multi-color light emitting diode and laser technologies.« less

p × n-Type Transverse Thermoelectrics: A Novel Type of Thermal Management Material

NASA Astrophysics Data System (ADS)

Tang, Yang; Cui, Boya; Zhou, Chuanle; Grayson, Matthew

2015-06-01

In this paper we review the recently identified p × n-type transverse thermoelectrics and study the thermoelectric properties of the proposed candidate materials. Anisotropic electron and hole conductivity arise from either an artificially engineered band structure or from appropriately anisotropic crystals, and result in orthogonal p-type and n-type directional Seebeck coefficients, inducing a non-zero off-diagonal transverse Seebeck coefficient with appropriately oriented currents. Such materials have potential for new applications of thermoelectric materials in transverse Peltier cooling and transverse thermal energy harvesting. In this paper we review general transverse thermoelectric phenomena to identify advantages of p × n-type transverse thermoelectrics compared with previously studied transverse thermoelectric phenomena. An intuitive overview of the band structure of one such p × n-material, the InAs/GaSb type-II superlattice, is introduced, and the plot of thermoelectric performance as a function of superlattice structure is calculated, as an example of how band structures can be optimized for the best transverse thermoelectric performance.

Investigation of high temperature antennas for space shuttle

NASA Technical Reports Server (NTRS)

Kuhlman, E. A.

1973-01-01

The design and development of high temperature antennas for the space shuttle orbiter are discussed. The antenna designs were based on three antenna types, an annular slot (L-Band), a linear slot (C-Band), and a horn (C-Band). The design approach was based on combining an RF window, which provides thermal protection, with an off-the-shelf antenna. Available antenna window materials were reviewed and compared, and the materials most compatible with the design requirements were selected. Two antenna window design approaches were considered: one employed a high temperature dielectric material and a low density insulation material, and the other an insulation material usable for the orbiter thermal protection system. Preliminary designs were formulated and integrated into the orbiter structure. Simple electrical models, with a series of window configurations, were constructed and tested. The results of tests and analyses for the final antenna system designs are given and show that high temperature antenna systems consisting of off-the-shelf antennas thermally protected by RF windows can be designed for the Space Shuttle Orbiter.

Correlation of antigenic expression with progress in antibiotic therapy of acute human brucellosis.

PubMed

Kwaasi, A A A; Al-Mohanna, F A; Nakeeb, S M; Roberts, G T; Al-Thawadi, S; Hassan, A Y; Al-Hokail, A; Elfaki, M G

2005-06-01

Human brucellosis is a zoonotic disease which is endemic in Saudi Arabia. The aim of this study was to investigate the humoral immune responses and identify the target antigens that persist at different stages in human brucellosis during antibiotic therapy. To do this, an acute case of accidental nosocomial infection was studied experimentally. Blood was collected from the patient at the time of diagnosis, and at weekly intervals during therapy until remission. IgG and IgM immunoblotting was used to characterize specific antigenic determinants, and ELISA antibody titration was performed to quantify the circulating antibodies. Results indicated that protein bands of 12-13.5 kDa bound IgG in the patient's sera but did not bind IgM on immunoblots and are probably not specific for, or important in, early stage infections. However, an 18 kDa band persisted during infection through remission. The pivotal and most important findings were that the number of protein bands seen on immunoblots, the magnitude of ELISA antibody titres and the concomitant changes in the intensity of the polypeptide bands of 42-43 kDa were positively correlated with the stage of infection. High numbers of anti-IgG and -IgM immunoblot bands coupled with high ELISA antibody titres and a concomitant increase in intensity of the 42-43 kDa bands were positively correlated with acute and severe infection. Conversely, a reduction in the number of polypeptide bands as well as a decrease in the intensity, until the complete disappearance of the 42-43 kDa bands, coupled with low (baseline) ELISA antibody titration values indicated successful treatment and remission. The routine use of the methods described here to ascertain the stage of the disease, assess the progress of antimicrobial therapy and monitor cases of relapse in human brucellosis is suggested.

Two-dimensional wide-band-gap II-V semiconductors with a dilated graphene-like structure

NASA Astrophysics Data System (ADS)

Zhang, Xue-Jing; Liu, Bang-Gui

2016-12-01

Since the advent of graphene, two-dimensional (2D) materials have become very attractive and there is growing interest in exploring new 2D materials beyond graphene. Here, through density-functional theory (DFT) calculations, we predict 2D wide-band-gap II-V semiconductor materials of M3X2 (M = Zn, Cd and X = N, P, As) with a dilated graphene-like honeycomb structure. In this structure the group-V X atoms form two X-atomic planes symmetrically astride the centering group-IIB M atomic plane. Our DFT calculation shows that 2D Zn3N2, Zn3P2 and Zn3As2 have direct band gaps of 2.87, 3.81 and 3.55 eV, respectively, and 2D Cd3N2, Cd3P2 and Cd3As2 exhibit indirect band gaps of 2.74, 3.51 and 3.29 eV, respectively. Each of the six 2D materials is shown to have effective carrier (either hole or electron) masses down to 0.03m 0-0.05m 0. The structural stability and feasibility of experimental realization of these 2D materials has been shown in terms of DFT phonon spectra and total energy comparison with related existing bulk materials. On the experimental side, there already are many similar two-coordinate structures of Zn and other transition metals in various organic materials. Therefore, these 2D semiconductors can enrich the family of 2D electronic materials and may have promising potential for achieving novel transistors and optoelectronic devices.

Ab initio electronic structure calculations for metallic intermediate band formation in photovoltaic materials

NASA Astrophysics Data System (ADS)

Wahnón, P.; Tablero, C.

2002-04-01

A metallic isolated band in the middle of the band gap of several III-V semiconductors has been predicted as photovoltaic materials with the possibility of providing substantially enhanced efficiencies. We have investigated the electronic band structures and lattice constants of GanAsmM and GanPmM with M=Sc, Ti, V, and Cr, to identify whether this isolated band is likely to exist by means of accurate calculations. For this task, we use the SIESTA program, an ab initio periodic density-functional method, fully self consistent in the local-density approximation. Norm-conserving, nonlocal pseudopotentials and confined linear combination of atomic orbitals have been used. We have carried out a case study of GanAsmTi and GanPmTi energy-band structure including analyses of the effect of the basis set, fine k-point mesh to ensure numerical convergence, structural parameters, and generalized gradient approximation for exchange and correlation corrections. We find the isolated intermediate band when one Ti atom replaces the position of one As (or P) atom in the crystal structure. For this kind of compound we show that the intermediate band relative position inside the band gap and width are sensitive to the dynamic relaxation of the crystal and the size of the basis set.

Band structure of comb-like photonic crystals containing meta-materials

NASA Astrophysics Data System (ADS)

Weng, Yi; Wang, Zhi-Guo; Chen, Hong

2007-09-01

We study the transmission properties and band structure of comb-like photonic crystals (PC) with backbones constructed of meta-materials (negative-index materials) within the frame of the interface response theory. The result shows the existence of a special band gap at low frequency. This gap differs from the Bragg gaps in that it is insensitive to the geometrical scaling and disorder. In comparison with the zero-average-index gap in one-dimensional PC made of alternating positive- and negative-index materials, the gap is obviously deeper and broader, given the same system parameters. In addition, the behavior of its gap-edges is also different. One gap-edge is decided by the average permittivity whereas the other is only subject to the changing of the permeability of the backbone. Due to this asymmetry of the two gap-edges, the broadening of the gap could be realized with much freedom and facility.

Investigation of electronic band structure and charge transfer mechanism of oxidized three-dimensional graphene as metal-free anodes material for dye sensitized solar cell application

NASA Astrophysics Data System (ADS)

Loeblein, Manuela; Bruno, Annalisa; Loh, G. C.; Bolker, Asaf; Saguy, Cecile; Antila, Liisa; Tsang, Siu Hon; Teo, Edwin Hang Tong

2017-10-01

Dye-sensitized solar cells (DSSCs) offer an optimal trade-off between conversion-efficiency and low-cost fabrication. However, since all its electrodes need to fulfill stringent work-function requirements, its materials have remained unchanged since DSSC's first report early-90s. Here we describe a new material, oxidized-three-dimensional-graphene (o-3D-C), with a band gap of 0.2 eV and suitable electronic band-structure as alternative metal-free material for DSSCs-anodes. o-3D-C/dye-complex has a strong chemical bonding via carboxylic-group chemisorption with full saturation after 12 sec at capacity of ∼450 mg/g (600x faster and 7x higher than optimized metal surfaces). Furthermore, fluorescence quenching of life-time by 28-35% was measured demonstrating charge-transfer from dye to o-3D-C.

Design Principles for the Atomic and Electronic Structure of Halide Perovskite Photovoltaic Materials: Insights from Computation.

PubMed

Berger, Robert F

2018-02-09

In the current decade, perovskite solar cell research has emerged as a remarkably active, promising, and rapidly developing field. Alongside breakthroughs in synthesis and device engineering, halide perovskite photovoltaic materials have been the subject of predictive and explanatory computational work. In this Minireview, we focus on a subset of this computation: density functional theory (DFT)-based work highlighting the ways in which the electronic structure and band gap of this class of materials can be tuned via changes in atomic structure. We distill this body of computational literature into a set of underlying design principles for the band gap engineering of these materials, and rationalize these principles from the viewpoint of band-edge orbital character. We hope that this perspective provides guidance and insight toward the rational design and continued improvement of perovskite photovoltaics. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Identification of strained black phosphorous by Raman spectroscopy

NASA Astrophysics Data System (ADS)

Wan, Jiawei; Guo, Junhong; Hu, Fangren

2017-04-01

Phosphorene has a very high hole mobility and can be a tuned band structure, and has become an ideal material for electronic devices. For this new type of two-dimensional material, in the applied strain, black phosphorus (BP) can be changed into an indirect band gap and metallic materials from the direct band gap semiconductor material, which greatly affect its inherent physical characteristics. How to identify strained microstructure changes becomes an important problem. The calculated Raman spectra disclose that the A{}{{g}}2 mode and B{}2{{g}} mode will split and the Raman spectra appear, while the A{}{{g}}1 mode is shifted to low-frequency region. The deformation induced by strain will effectively change the Raman mode position and intensity, this can be used to identify phosphorus changes. Project supported by the National Science Foundation of China (Nos. 61505085, 61574080, 61274127) and the Innovation Project of Jiangsu Graduate Student, China (No. SJLX15_0379).

Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands

PubMed Central

Zhang, Jiawei; Song, Lirong; Pedersen, Steffen Hindborg; Yin, Hao; Hung, Le Thanh; Iversen, Bo Brummerstedt

2017-01-01

Widespread application of thermoelectric devices for waste heat recovery requires low-cost high-performance materials. The currently available n-type thermoelectric materials are limited either by their low efficiencies or by being based on expensive, scarce or toxic elements. Here we report a low-cost n-type material, Te-doped Mg3Sb1.5Bi0.5, that exhibits a very high figure of merit zT ranging from 0.56 to 1.65 at 300−725 K. Using combined theoretical prediction and experimental validation, we show that the high thermoelectric performance originates from the significantly enhanced power factor because of the multi-valley band behaviour dominated by a unique near-edge conduction band with a sixfold valley degeneracy. This makes Te-doped Mg3Sb1.5Bi0.5 a promising candidate for the low- and intermediate-temperature thermoelectric applications. PMID:28059069

Electronic and structural properties of M3(HITP)2 (M = Ni, Cu and Co) metal-organic frameworks

NASA Astrophysics Data System (ADS)

Silveira, Orlando; Chacham, Helio; Alexandre, Simone

Theoretical and experimental works have demonstrated that electrical and structural properties of metal-organic frameworks (MOF) can be significantly changed by the identity of the metal center, leading to a potential strategy for tuning the selectivity of the material toward different types of technological applications. In this work, we use first principle calculations to investigate the electronic properties of 2D MOF M3(HITP)2 (M is Ni, Cu and Co and HITP = 2,3,6,7,10,11 - hexaiminotriphenylene). Our results show that for M=Ni and Co, the structures are perfect planar and there is a full charge delocalization in the 2D plane of stacking due to the predominance of π - π bonding. The band structure for M = Ni shows that this material is a semiconductor with an indirect band gap of 132 meV, whilst for M = Co the band structure shows that this material is a ferromagnetic semiconductor with a direct band gap of 386 meV for spin down and a indirect band gap of 246 meV for spin up. For M=Cu, the material is a metal and adopts a distorted structure due to a different hybridization of the metal atom in comparison with its counterparts. We also propose a tight binding model that can represent the electronic structure near the Fermi level of this family of MOF.

Determination of cell cycle phases in live B16 melanoma cells using IRMS.

PubMed

Bedolla, Diana E; Kenig, Saša; Mitri, Elisa; Ferraris, Paolo; Marcello, Alessandro; Grenci, Gianluca; Vaccari, Lisa

2013-07-21

The knowledge of cell cycle phase distribution is of paramount importance for understanding cellular behaviour under normal and stressed growth conditions. This task is usually assessed using Flow Cytometry (FC) or immunohistochemistry. Here we report on the use of FTIR microspectroscopy in Microfluidic Devices (MD-IRMS) as an alternative technique for studying cell cycle distribution in live cells. Asynchronous, S- and G0-synchronized B16 mouse melanoma cells were studied by running parallel experiments based on MD-IRMS and FC using Propidium Iodide (PI) staining. MD-IRMS experiments have been done using silicon-modified BaF2 devices, where the thin silicon layer prevents BaF2 dissolution without affecting the transparency of the material and therefore enabling a better assessment of the Phosphate I (PhI) and II (PhII) bands. Hierarchical Cluster Analysis (HCA) of cellular microspectra in the 1300-1000 cm(-1) region pointed out a distribution of cells among clusters, which is in good agreement with FC results among G0/G1, S and G2/M phases. The differentiation is mostly driven by the intensity of PhI and PhII bands. In particular, PhI almost doubles from the G0/G1 to G2/M phase, in agreement with the trend followed by nucleic acids during cellular progression. MD-IRMS is then proposed as a powerful method for the in situ determination of the cell cycle stage of an individual cell, without any labelling or staining, which gives the advantage of possibly monitoring specific cellular responses to several types of stimuli by clearly separating the spectral signatures related to the cellular response from those of cells that are normally progressing.

Steadily oscillating axial bands of binary granules in a nearly filled coaxial cylinder.

PubMed

Inagaki, Shio; Ebata, Hiroyuki; Yoshikawa, Kenichi

2015-01-01

Granular materials often segregate under mechanical agitation such as flowing, shaking, or rotating, in contrast to an expectation of mixing. It is well known that bidisperse mixtures of granular materials in a partially filled rotating cylinder exhibit monotonic coarsening dynamics of segregation. Here we report the steady oscillation of segregated axial bands under the stationary rotation of a nearly filled coaxial cylinder for O(10(3)) revolutions. The axial bands demonstrate steady back-and-forth motion along the axis of rotation. Experimental findings indicated that these axial band dynamics are driven by global convection throughout the system. The essential features of the spatiotemporal dynamics are reproduced with a simple phenomenological equation that incorporates the effect of global convection.

Numerical simulation of systems of shear bands in ductile metal with inclusions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Plohr, JeeYeon N., E-mail: jplohr@lanl.gov; Plohr, Bradley J.

2016-02-15

We develop a method for numerical simulations of high strain-rate loading of mesoscale samples of ductile metal with inclusions. Because of its small-scale inhomogeneity, the composite material is prone to localized shear deformation (adiabatic shear bands). This method employs the Generalized Method of Cells of Paley and Aboudi [Mech. Materials, vol. 14, pp. 127–139, 1992] to ensure that the micro mechanical behavior of the metal and inclusions is reflected properly in the behavior of the composite at the mesoscale. To find the effective plastic strain rate when shear bands are present, we extend and apply the analytic and numerical analysismore » of shear bands of Glimm, Plohr, and Sharp [Mech. Materials, vol. 24, pp. 31–41, 1996]. Our tests of the method focus on the stress/strain response in uniaxial-strain flow, both compressive and tensile, of depleted uranium metal containing silicon carbide inclusions. We use the Preston-Tonks-Wallace viscoplasticity model [J. Appl. Phys., vol. 93, pp. 211–220, 2003], which applies to the high strain-rate regime of an isotropic viscoplastic solid. In results, we verify the elevated temperature and thermal softening at shear bands in our simulations of pure DU and DU/SiC composites. We also note that in composites, due the asymmetry caused by the inclusions, shear band form at different times in different subcells. In particular, in the subcells near inclusions, shear band form much earlier than they do in pure DU.« less

Numerical simulation of systems of shear bands in ductile metal with inclusions

NASA Astrophysics Data System (ADS)

Plohr, JeeYeon N.; Plohr, Bradley J.

2016-02-01

We develop a method for numerical simulations of high strain-rate loading of mesoscale samples of ductile metal with inclusions. Because of its small-scale inhomogeneity, the composite material is prone to localized shear deformation (adiabatic shear bands). This method employs the Generalized Method of Cells of Paley and Aboudi [Mech. Materials, vol. 14, pp. 127-139, 1992] to ensure that the micro mechanical behavior of the metal and inclusions is reflected properly in the behavior of the composite at the mesoscale. To find the effective plastic strain rate when shear bands are present, we extend and apply the analytic and numerical analysis of shear bands of Glimm, Plohr, and Sharp [Mech. Materials, vol. 24, pp. 31-41, 1996]. Our tests of the method focus on the stress/strain response in uniaxial-strain flow, both compressive and tensile, of depleted uranium metal containing silicon carbide inclusions. We use the Preston-Tonks-Wallace viscoplasticity model [J. Appl. Phys., vol. 93, pp. 211-220, 2003], which applies to the high strain-rate regime of an isotropic viscoplastic solid. In results, we verify the elevated temperature and thermal softening at shear bands in our simulations of pure DU and DU/SiC composites. We also note that in composites, due the asymmetry caused by the inclusions, shear band form at different times in different subcells. In particular, in the subcells near inclusions, shear band form much earlier than they do in pure DU.

Dipole-allowed direct band gap silicon superlattices

PubMed Central

Oh, Young Jun; Lee, In-Ho; Kim, Sunghyun; Lee, Jooyoung; Chang, Kee Joo

2015-01-01

Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable pure-silicon superlattice structures that can serve as promising materials for solar cell applications and can lead to the realization of pure Si-based optoelectronic devices. The structures are almost identical to that of bulk Si except that defective layers are intercalated in the diamond lattice. The superlattices exhibit dipole-allowed direct band gaps as well as indirect band gaps, providing ideal conditions for the investigation of a direct-to-indirect band gap transition. The fact that almost all structural portions of the superlattices originate from bulk Si warrants their stability and good lattice matching with bulk Si. Through first-principles molecular dynamics simulations, we confirmed their thermal stability and propose a possible method to synthesize the defective layer through wafer bonding. PMID:26656482

Simultaneous band-gap narrowing and carrier-lifetime prolongation of organic–inorganic trihalide perovskites

PubMed Central

Kong, Lingping; Liu, Gang; Gong, Jue; Hu, Qingyang; Schaller, Richard D.; Dera, Przemyslaw; Zhang, Dongzhou; Liu, Zhenxian; Yang, Wenge; Zhu, Kai; Tang, Yuzhao; Wang, Chuanyi; Wei, Su-Huai; Xu, Tao; Mao, Ho-kwang

2016-01-01

The organic–inorganic hybrid lead trihalide perovskites have been emerging as the most attractive photovoltaic materials. As regulated by Shockley–Queisser theory, a formidable materials science challenge for improvement to the next level requires further band-gap narrowing for broader absorption in solar spectrum, while retaining or even synergistically prolonging the carrier lifetime, a critical factor responsible for attaining the near-band-gap photovoltage. Herein, by applying controllable hydrostatic pressure, we have achieved unprecedented simultaneous enhancement in both band-gap narrowing and carrier-lifetime prolongation (up to 70% to ∼100% increase) under mild pressures at ∼0.3 GPa. The pressure-induced modulation on pure hybrid perovskites without introducing any adverse chemical or thermal effect clearly demonstrates the importance of band edges on the photon–electron interaction and maps a pioneering route toward a further increase in their photovoltaic performance. PMID:27444014

Self-organized pseudo-graphene on grain boundaries in topological band insulators

NASA Astrophysics Data System (ADS)

Slager, Robert-Jan; Juričić, Vladimir; Lahtinen, Ville; Zaanen, Jan

2016-06-01

Semimetals are characterized by nodal band structures that give rise to exotic electronic properties. The stability of Dirac semimetals, such as graphene in two spatial dimensions, requires the presence of lattice symmetries, while akin to the surface states of topological band insulators, Weyl semimetals in three spatial dimensions are protected by band topology. Here we show that in the bulk of topological band insulators, self-organized topologically protected semimetals can emerge along a grain boundary, a ubiquitous extended lattice defect in any crystalline material. In addition to experimentally accessible electronic transport measurements, these states exhibit a valley anomaly in two dimensions influencing edge spin transport, whereas in three dimensions they appear as graphenelike states that may exhibit an odd-integer quantum Hall effect. The general mechanism underlying these semimetals—the hybridization of spinon modes bound to the grain boundary—suggests that topological semimetals can emerge in any topological material where lattice dislocations bind localized topological modes.

Thermally Strained Band Gap Engineering of Transition-Metal Dichalcogenide Bilayers with Enhanced Light-Matter Interaction toward Excellent Photodetectors.

PubMed

Wang, Sheng-Wen; Medina, Henry; Hong, Kuo-Bin; Wu, Chun-Chia; Qu, Yindong; Manikandan, Arumugam; Su, Teng-Yu; Lee, Po-Tsung; Huang, Zhi-Quan; Wang, Zhiming; Chuang, Feng-Chuan; Kuo, Hao-Chung; Chueh, Yu-Lun

2017-09-26

Integration of strain engineering of two-dimensional (2D) materials in order to enhance device performance is still a challenge. Here, we successfully demonstrated the thermally strained band gap engineering of transition-metal dichalcogenide bilayers by different thermal expansion coefficients between 2D materials and patterned sapphire structures, where MoS 2 bilayers were chosen as the demonstrated materials. In particular, a blue shift in the band gap of the MoS 2 bilayers can be tunable, displaying an extraordinary capability to drive electrons toward the electrode under the smaller driven bias, and the results were confirmed by simulation. A model to explain the thermal strain in the MoS 2 bilayers during the synthesis was proposed, which enables us to precisely predict the band gap-shifted behaviors on patterned sapphire structures with different angles. Furthermore, photodetectors with enhancement of 286% and 897% based on the strained MoS 2 on cone- and pyramid-patterned sapphire substrates were demonstrated, respectively.

Electronic materials with a wide band gap: recent developments

PubMed Central

Klimm, Detlef

2014-01-01

The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider E g were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity. PMID:25295170

Strong Correlation and Topological States in Orbital-Active Dirac Materials

NASA Astrophysics Data System (ADS)

Xu, Shenglong; Wu, Congjun

Two dimensional Dirac materials, starting with graphene, have drawn tremendous research interests in the past decade. Instead of focusing on the pz orbital as in graphene, we go a step further and study its two orbitals counterpart, namely the px and py orbitals on a honeycomb lattice. The model applies to both optical lattices and several solid state systems including organic material, fluoridated tin film, BiX/SBX (X=H.F.CI.Br). In the band structure, besides the well known Dirac points in the graphene band structure, the orbital degrees of freedom give rise to flat bands as well as quadratic band touching points. These new features provide an even wider playground for searching exotic states of matter. With help of mean field theory and functional renormalization group (FRG) method, we explore the effects of interaction on the system and investigate the consequential interesting states such as ferromagnetism, Wigner crystallization, quantum anomalous Hall states and f-wave superconductivity.

Characterization and Mitigation of Resistive Losses in a Large Area Laser Power Converter

DTIC Science & Technology

2014-03-27

level lies between the valence and conduction band such that relatively few electrons are thermally excited into the conduction band. Pure crystalline...have an equal number of electrons in the conduction band and holes in the valence band when it is in thermal equilibrium. That is, the electron...easily be thermally excited into the conduction band and act as a mobile charge carrier within the material, now considered n-type for it contains a

Perovskites-Based Solar Cells: A Review of Recent Progress, Materials and Processing Methods

PubMed Central

Shi, Zhengqi; Jayatissa, Ahalapitiya H.

2018-01-01

With the rapid increase of efficiency up to 22.1% during the past few years, hybrid organic-inorganic metal halide perovskite solar cells (PSCs) have become a research “hot spot” for many solar cell researchers. The perovskite materials show various advantages such as long carrier diffusion lengths, widely-tunable band gap with great light absorption potential. The low-cost fabrication techniques together with the high efficiency makes PSCs comparable with Si-based solar cells. But the drawbacks such as device instability, J-V hysteresis and lead toxicity reduce the further improvement and the future commercialization of PSCs. This review begins with the discussion of crystal and electronic structures of perovskite based on recent research findings. An evolution of PSCs is also analyzed with a greater detail of each component, device structures, major device fabrication methods and the performance of PSCs acquired by each method. The following part of this review is the discussion of major barriers on the pathway for the commercialization of PSCs. The effects of crystal structure, fabrication temperature, moisture, oxygen and UV towards the stability of PSCs are discussed. The stability of other components in the PSCs are also discussed. The lead toxicity and updated research progress on lead replacement are reviewed to understand the sustainability issues of PSCs. The origin of J-V hysteresis is also briefly discussed. Finally, this review provides a roadmap on the current needs and future research directions to address the main issues of PSCs. PMID:29734667

Light polarization management via reflection from arrays of sub-wavelength metallic twisted bands

NASA Astrophysics Data System (ADS)

Nawrot, M.; Haberko, J.; Zinkiewicz, Ł.; Wasylczyk, P.

2017-12-01

With constant progress of nano- and microfabrication technologies, photolithography in particular, a number of sub-wavelength metallic structures have been demonstrated that can be used to manipulate light polarization. Numerical simulations of light propagation hint that helical twisted bands can have interesting polarization properties. We use three-dimensional two-photon photolithography (direct laser writing) to fabricate a few-micrometer-thick arrays of twisted bands and coat them uniformly with metal. We demonstrate that circular polarization can be generated from linear polarization upon reflection from such structures over a broad range of frequencies in the mid infrared.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michael E. McIlwain; Nick Thompson; Da Gao

Considerable interest is given to the excellent scintillation properties of cerium doped lanthanum chloride (LaCl3) and lanthanum bromide (LaBr3). The scintillation efficiencies are much greater than other materials, even those containing cerium. This high efficiency is attributed to the high mobility of electrons and holes, unique placement of the cerium 5d states within the band gap, and energy of the band gap. To better understand the scintillation process and better define the nature of the Self Trapped Exciton (STE) within these unique scintillation materials, density functional theory (DFT), and Ab-inito (HF-MP2) calculations are reported. DFT calculations have yielded a qualitativemore » description of the orbital composition and energy distribution of the band structure in the crystalline material. MP2 and single configuration interaction calculations have provided quantitative values for the band gap and provided energies for the possible range of excited states created following hole and electron creation. Based on this theoretical treatment, one possible description of the STE is the combination of Vk center (Br2-1) and LaBr+1 species that recombine to form a distorted geometry LaBr3* (triplet state). Depending on the distance between the LaBr and Br2, the STE emission band can be reproduced.« less

Core Levels, Band Alignments, and Valence-Band States in CuSbS 2 for Solar Cell Applications

DOE PAGES

Whittles, Thomas J.; Veal, Tim D.; Savory, Christopher N.; ...

2017-11-10

The earth-abundant material CuSbS 2 (CAS) has shown good optical properties as a photovoltaic solar absorber material, but has seen relatively poor solar cell performance. To investigate the reason for this anomaly, the core levels of the constituent elements, surface contaminants, ionization potential, and valence-band spectra are studied by X-ray photoemission spectroscopy. The ionization potential and electron affinity for this material (4.98 and 3.43 eV) are lower than those for other common absorbers, including CuInxGa (1-x)Se 2 (CIGS). Experimentally corroborated density functional theory (DFT) calculations show that the valence band maximum is raised by the lone pair electrons from themore » antimony cations contributing additional states when compared with indium or gallium cations in CIGS. The resulting conduction band misalignment with CdS is a reason for the poor performance of cells incorporating a CAS/CdS heterojunction, supporting the idea that using a cell design analogous to CIGS is unhelpful. These findings underline the critical importance of considering the electronic structure when selecting cell architectures that optimize open-circuit voltages and cell efficiencies.« less

Experimental study on surface properties of the PMMA used in high power spark gaps

NASA Astrophysics Data System (ADS)

Han, Ruoyu; Wu, Jiawei; Ding, Weidong; Liu, Yunfei; Gou, Yang

2017-10-01

This paper studies the surface properties of the Polymethylmethacrylate (PMMA) insulator samples used in high power spark gaps. Experiments on surface morphology, surface profile, surface chemical composition and surface leakage current were performed. Metal particles ejected in tangent direction of discharge spots were researched on the sample surface. Three kinds of distinct bands were found on the surface after 1500 shots: colorless and transparent sinking band, black band, and grey powdered coating band. The thickness of the coating band was tens of microns and the maximum radial erosion rate was about 10 μm/C. Surface content analysis indicated that the powdered coating was a mixture of decomposed insulator material and electrode material oxides. In addition, leakage current significantly depended on water content in the chamber and presented an U-shape curve distribution along the insulator surface, in keeping with the amount of powdered coating due to shock waves. Possible reasons of the surface property changes were discussed. Electroconductive oxides of low valence states of Cu and W produced by the reactions between electrode materials and arc plasmas were considered to be the cause of dielectric performance degradation.

Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications.

PubMed

Whittles, Thomas J; Veal, Tim D; Savory, Christopher N; Welch, Adam W; de Souza Lucas, Francisco Willian; Gibbon, James T; Birkett, Max; Potter, Richard J; Scanlon, David O; Zakutayev, Andriy; Dhanak, Vinod R

2017-12-06

The earth-abundant material CuSbS 2 (CAS) has shown good optical properties as a photovoltaic solar absorber material, but has seen relatively poor solar cell performance. To investigate the reason for this anomaly, the core levels of the constituent elements, surface contaminants, ionization potential, and valence-band spectra are studied by X-ray photoemission spectroscopy. The ionization potential and electron affinity for this material (4.98 and 3.43 eV) are lower than those for other common absorbers, including CuIn x Ga (1-x) Se 2 (CIGS). Experimentally corroborated density functional theory (DFT) calculations show that the valence band maximum is raised by the lone pair electrons from the antimony cations contributing additional states when compared with indium or gallium cations in CIGS. The resulting conduction band misalignment with CdS is a reason for the poor performance of cells incorporating a CAS/CdS heterojunction, supporting the idea that using a cell design analogous to CIGS is unhelpful. These findings underline the critical importance of considering the electronic structure when selecting cell architectures that optimize open-circuit voltages and cell efficiencies.

Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements

DOEpatents

Guha, Subhendu; Ovshinsky, Stanford R.

1990-02-02

A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.

Energy Conversion Properties of ZnSiP2, a Lattice-Matched Material for Silicon-Based Tandem Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez, Aaron D.; Warren, Emily L.; Gorai, Prashun

ZnSiP2 demonstrates promising potential as an optically active material on silicon. There has been a longstanding need for wide band gap materials that can be integrated with Si for tandem photovoltaics and other optoelectronic applications. ZnSiP2 is an inexpensive, earth abundant, wide band gap material that is stable and lattice matched with silicon. This conference proceeding summarizes our PV-relevant work on bulk single crystal ZnSiP2, highlighting the key findings and laying the ground work for integration into Si-based tandem devices.

Photoluminescence Mechanism and Photocatalytic Activity of Organic-Inorganic Hybrid Materials Formed by Sequential Vapor Infiltration.

PubMed

Akyildiz, Halil I; Stano, Kelly L; Roberts, Adam T; Everitt, Henry O; Jur, Jesse S

2016-05-03

Organic-inorganic hybrid materials formed by sequential vapor infiltration (SVI) of trimethylaluminum into polyester fibers are demonstrated, and the photoluminescence of the fibers is evaluated using a combined UV-vis and photoluminescence excitation (PLE) spectroscopy approach. The optical activity of the modified fibers depends on infiltration thermal processing conditions and is attributed to the reaction mechanisms taking place at different temperatures. At low temperatures a single excitation band and dual emission bands are observed, while, at high temperatures, two distinct absorption bands and one emission band are observed, suggesting that the physical and chemical structure of the resulting hybrid material depends on the SVI temperature. Along with enhancing the photoluminescence intensity of the PET fibers, the internal quantum efficiency also increased to 5-fold from ∼4-5% to ∼24%. SVI processing also improved the photocatalytic activity of the fibers, as demonstrated by photodeposition of Ag and Au metal particles out of an aqueous metal salt solution onto fiber surfaces via UVA light exposure. Toward applications in flexible electronics, well-defined patterning of the metallic materials is achieved by using light masking and focused laser rastering approaches.

Z2Pack: Numerical implementation of hybrid Wannier centers for identifying topological materials

NASA Astrophysics Data System (ADS)

Gresch, Dominik; Autès, Gabriel; Yazyev, Oleg V.; Troyer, Matthias; Vanderbilt, David; Bernevig, B. Andrei; Soluyanov, Alexey A.

2017-02-01

The intense theoretical and experimental interest in topological insulators and semimetals has established band structure topology as a fundamental material property. Consequently, identifying band topologies has become an important, but often challenging, problem, with no exhaustive solution at the present time. In this work we compile a series of techniques, some previously known, that allow for a solution to this problem for a large set of the possible band topologies. The method is based on tracking hybrid Wannier charge centers computed for relevant Bloch states, and it works at all levels of materials modeling: continuous k .p models, tight-binding models, and ab initio calculations. We apply the method to compute and identify Chern, Z2, and crystalline topological insulators, as well as topological semimetal phases, using real material examples. Moreover, we provide a numerical implementation of this technique (the Z2Pack software package) that is ideally suited for high-throughput screening of materials databases for compounds with nontrivial topologies. We expect that our work will allow researchers to (a) identify topological materials optimal for experimental probes, (b) classify existing compounds, and (c) reveal materials that host novel, not yet described, topological states.

Decoration of wide bandgap semiconducting materials for enhancing photoelectrochemical efficiency of PEC systems.

NASA Astrophysics Data System (ADS)

Bakranov, N.; Zhabaikhanov, A.; Kudaibergenov, S.; Ibraev, N.

2018-03-01

The production of photoanodes based on wide-band gap materials such as TiO2 is economically viable because of the low cost of synthesis methods. Contrary to economic aspects, wide-band gap semiconductor materials have a significant disadvantage due to low sensitivity to photons of visible light. To increase the photoactive parameters of the material of the electrodes in the visible range, the methods for decorating nanomasses of titanium dioxide by narrow-gap semiconductors are used. One of the most suitable narrow-gap semiconductor materials are CdS and Fe2O3. Controlled deposition of such materials on wide-gap semiconductors allows to regulate both the diffusion time of charge carriers and the band structure of TiO2/Fe2O3 and TiO2/CdS composites. The dimensions of the structure of the photoelectrode material of the cell have a large influence on the characteristics of the photocatalyst created. Thus, in the hematite structures of nanometre dimension, the rate of recombination of charge carriers fades away in comparison with bulk structures. Reducing the size of CdS structures also positively affects the nature of the photocatalytic reaction.

Very broad bandwidth klystron amplifiers

NASA Astrophysics Data System (ADS)

Faillon, G.; Egloff, G.; Farvet, C.

Large surveillance radars use transmitters at peak power levels of around one MW and average levels of a few kW, and possibly several tens of kW, in S band, or even C band. In general, the amplification stage of these transmitters is a microwave power tube, frequently a klystron. Although designers often turn to klystrons because of their good peak and average power capabilities, they still see them as narrow band amplifiers, undoubtedly because of their resonant cavities which, at first sight, would seem highly selective. But, with the progress of recent years, it has now become quite feasible to use these tubes in installations requiring bandwidths in excess of 10 - 12 percent, and even 15 percent, at 1 MW peak for example, in S-band.

Using a Distant Abdominal Skin Flap to Treat Digital Constriction Bands: A Case Report for Vohwinkel Syndrome.

PubMed

Zhang, Mingzi; Song, Kexin; Ding, Ning; Shu, Chang; Wang, Youbin

2016-02-01

In this study, a Vohwinkel syndrome case is presented where in 5th digit constriction bands in the right hand were reconstructed using a distant abdominal skin flap. Vohwinkel syndrome, or keratoderma hereditarium mutilans, is a rare, autosomal dominant genetic skin condition that causes palmoplantar hyperkeratosis and constricts finger and/or toe bands. In a typical manifestation, the finger and toe constriction bands lead to progressive strangulation and autoamputation, which requires immediate clinical treatment. Topical keratolytics and systemic retinoids have been used to treat hyperkeratosis but without consistent results. Only 1 effective approach for autoamputation has been accepted, reconstructive surgery.Applying a distant abdominal skin flap produced satisfying postoperative effects at the 18-month follow-up.

Associating Specific Materials with Topological Insulation Behavior

NASA Astrophysics Data System (ADS)

Zhang, Xiuwen

2014-03-01

The first-principles (a) total-energy/stability calculations combined with (b) electronic structure calculations of band inversion, spin-polarization and topological invariants (Z2) has led to the design and prediction of specific materials that are topological insulators in this study. We classify bulk materials into four types of band-inversion behaviors (TI-1, TI-2, BI-3, BI-4), based on the number of band inversions and their distributions on various time reversal invariant k points. Depending on the inversion type in bulk, the corresponding surface states have different protections e.g., protected by time reversal symmetry (in TI-1 materials), spatial symmetry (in TI-2), or not protected (in BI-3, BI-4). Subject 1 Discovery of new TI by screening materials for a Z2 metric: Such high-throughput search in the framework of Inverse Design methodology predicts a few previously undocumented materials that are TI-1 in their ground state crystal structure. We also predict dozens of materials that are TI-1 however in structures that are not ground states (e.g. perovskite structure of II-Bi-O3). Subject 2 Design Principle to increase the gap of TI-1 materials: In HgTe-like cubic topological materials, the insulating gap is zero since the spin-orbit splitting is positive and so a 4-fold half-filled p-like band is near the Fermi level. By design of hybridization of d-orbitals into the p-like bands, one can create negative spin-orbit splitting and so a finite insulating gap. Subject 3 Unconventional spin textures of TI surface states: Despite the fact that one of our predicted TI-1 KBaBi has inversion symmetry in the bulk-a fact that that would preclude bulk spin polarization-we find a Dresselhaus-like spin texture with non-helical spin texture. This originates from the local spin polarization, anchored on the atomic sites with inversion asymmetric point groups, that is compensated due to global inversion symmetry in bulk. In collaboration with: Jun-Wei Luo, Qihang Liu, Julien Vidal, and Alex Zunger, and supported in part by National Science Foundation DMREF. X.Z. acknowledges the administrative support of REMRSEC at Colorado School of Mines, Golden, Colorado.

Excimers from stable and persistent supramolecular radical-pairs in red/NIR-emitting organic nanoparticles and polymeric films.

PubMed

Blasi, Davide; Nikolaidou, Domna M; Terenziani, Francesca; Ratera, Imma; Veciana, Jaume

2017-03-29

In this work, the luminescence properties of new materials based on open-shell molecular systems are studied. In particular, we prepared polymeric films and organic nanoparticles (ONPs) doped with triphenylmethyl radical molecules. ONPs exhibit a uniform size distribution, spherical morphology and high colloidal stability. The emission spectrum of low-doped ONP suspensions and low-doped films is very similar to the emission spectrum of TTM in solution, while the luminescence lifetime and the luminescence quantum yield (LQY) are highly increased. Increasing the radical doping leads to a progressive decrease of the LQY and the appearance of a new broad excimeric band at longer wavelengths, both for ONPs and films. Thus, not only the luminescence properties were improved, but also the formation of excimers from stable and persistent supramolecular radical-pairs was observed for the first time. The good stability and luminescence properties with emission in the red-NIR region (650-800 nm), together with the open-shell nature of the emitter, make these free-radical excimer-forming materials promising candidates for optoelectronic and bioimaging applications.

An ultrastructural and immunogold localization study of proteoglycans associated with the osteocytes of fetal bone in osteogenesis imperfecta.

PubMed

Sarathchandra, P; Pope, F M; Ali, S Y

1996-06-01

Osteogenesis imperfecta (OI) is a rare, heterogeneous, inherited connective tissue disorder frequently caused by abnormalities of type I collagen. It is characterized by bone fragility, osteopenia, and progressive skeletal deformities. Electron microscopy of three OI type II fetal bone samples revealed numerous large osteocyte lacunae. In addition, there was a perilacunar osteoid-like band of collagen surrounding the osteocytes, which was unmineralized and morphologically unusual. Furthermore, large osteocyte lacunae contained fine particles and filamentous material similar to the expected ultrastructural appearance of proteoglycans. More detailed examination was carried out using histochemical and immunogold localization of proteoglycans at light and ultrastructural levels. These tests and the use of electron probe X-ray microanalysis confirmed that the material in the osteocyte lacunae was proteoglycan. In contrast, in the age- and site-matched normal fetal bone, all the osteocyte lacunae appeared negative for proteoglycan. Proteoglycans are regarded as inhibitors of calcification. Our observation of substantial amounts of proteoglycan in abnormally enlarged osteocytic lacunae of some OI fetal bone suggests association with the abnormal bone of this particular subtype of OI type II.

Role of organic cations on hybrid halide perovskite CH3NH3PbI3 surfaces

NASA Astrophysics Data System (ADS)

Teng, Qiang; Shi, Ting-Ting; Tian, Ren-Yu; Yang, Xiao-Bao; Zhao, Yu-Jun

2018-02-01

Organic-inorganic hybrid halide perovskite CH3NH3PbI3 (MAPbI3) has received rapid progress in power conversion efficiency as promising photovoltaic materials, yet the surface structures and the role of MA cations are not well understood. In this work, we investigated the structural stability and electronic properties of (001) surface of cubic, (001) and (110) surfaces of tetragonal and orthorhombic phases of MAPbI3 with considering the orientation of MA cations, by density functional theory calculations. We demonstrate that the orientation of MA cations has profound consequences on the structural stability and the electronic properties of the surfaces, in contrast to the bulk phases. Compared with the MA-I terminated surfaces, the Pb-I2 terminated ones generally have smaller band gaps and the advantage to enable the photo-excited holes to transfer to the hole-transport materials in both tetragonal and orthorhombic phases. Overall, we suggest that the films with Pb-I2 terminated surfaces would prevail in high performance solar energy absorbers.

Caracterisation des signatures de decharges partielles en utilisant une nouvelle generation de coupleurs piezoelectriques

NASA Astrophysics Data System (ADS)

Danouj, Boujemaa

An important issue affecting the sustainability of power transformers is systematic and progressive deterioration of the insulation system by the action of partial discharge. Ideally, it is appropriate to use on line, non-destructive techniques for detection and diagnosis of failures related to insulation systems, in order to determine whether preventive maintenance action is required. Thus, huge material losses can be saved (spared), while improving reliability and system availability. Based on a new generation of piezoelectric sensors (High Temperature Ultrasonic Transducers HTUTs), recently developed by the Industrial Materials Institute (IMI) in Boucherville (Qc, Canada) and offers very interesting features (broad band frequency response, flexible, miniature, economic, etc..), we propose in this thesis an investigation on the applicability of this technology to the problematic of partial discharges. This work presents an analysis of the metrological performance of these sensors and demonstrated empirically the consistency of their measures. It outlines the results of validation from a comparative study with the measures of a standard detection circuit. In addition, it also presents the potential of these sensors to locate partial discharge source position by acoustic emission.

Expected progress based on aluminium galium nitride Focal Plan Array for near and deep Ultraviolet

NASA Astrophysics Data System (ADS)

Reverchon, J.-L.; Robin, K.; Bansropun, S.; Gourdel, Y.; Robo, J.-A.; Truffer, J.-P.; Costard, E.; Brault, J.; Frayssinet, E.; Duboz, J.-Y.

The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. A camera based on such a material presents an extremely low dark current at room temperature. It can compete with technologies based on photocathodes, MCP intensifiers, back thinned CCD or hybrid CMOS focal plane arrays for low flux measurements. First, we will present results on focal plane array of 320 × 256 pixels with a pitch of 30 μm. The peak responsivity is tuned from 260 nm to 360 nm in different cameras. All these results are obtained in a standard SWIR supply chaine and with AlGaN Schottky diodes grown on sapphire. We will present here the first attempts to transfer the standard design Schottky photodiodes on from sapphire to silicon substrates. We will show the capability to remove the silicon substrate, to etch the window layer in order to extend the band width to lower wavelength and to maintain the AlGaN membrane integrity.

Band 3 Erythrocyte Membrane Protein Acts as Redox Stress Sensor Leading to Its Phosphorylation by p (72) Syk.

PubMed

Pantaleo, Antonella; Ferru, Emanuela; Pau, Maria Carmina; Khadjavi, Amina; Mandili, Giorgia; Mattè, Alessandro; Spano, Alessandra; De Franceschi, Lucia; Pippia, Proto; Turrini, Francesco

2016-01-01

In erythrocytes, the regulation of the redox sensitive Tyr phosphorylation of band 3 and its functions are still partially defined. A role of band 3 oxidation in regulating its own phosphorylation has been previously suggested. The current study provides evidences to support this hypothesis: (i) in intact erythrocytes, at 2 mM concentration of GSH, band 3 oxidation, and phosphorylation, Syk translocation to the membrane and Syk phosphorylation responded to the same micromolar concentrations of oxidants showing identical temporal variations; (ii) the Cys residues located in the band 3 cytoplasmic domain are 20-fold more reactive than GSH; (iii) disulfide linked band 3 cytoplasmic domain docks Syk kinase; (iv) protein Tyr phosphatases are poorly inhibited at oxidant concentrations leading to massive band 3 oxidation and phosphorylation. We also observed that hemichromes binding to band 3 determined its irreversible oxidation and phosphorylation, progressive hemolysis, and serine hyperphosphorylation of different cytoskeleton proteins. Syk inhibitor suppressed the phosphorylation of band 3 also preventing serine phosphorylation changes and hemolysis. Our data suggest that band 3 acts as redox sensor regulating its own phosphorylation and that hemichromes leading to the protracted phosphorylation of band 3 may trigger a cascade of events finally leading to hemolysis.

Effects of crystal structure and composition on the photocatalytic performance of Ta-O-N functional materials.

PubMed

Liu, Qing-Lu; Zhao, Zong-Yan; Yi, Jian-Hong

2018-05-07

For photocatalytic applications, the response of a material to the solar spectrum and its redox capabilities are two important factors determined by the band gap and band edge position of the electronic structure of the material. The crystal structure and composition of the photocatalyst are fundamental for determining the above factors. In this article, we examine the functional material Ta-O-N as an example of how to discuss relationships among these factors in detail with the use of theoretical calculations. To explore how the crystal structure and composition influence the photocatalytic performance, two groups of Ta-O-N materials were considered: the first group included ε-Ta 2 O 5 , TaON, and Ta 3 N 5 ; the second group included β-Ta 2 O 5 , δ-Ta 2 O 5 , ε-Ta 2 O 5 , and amorphous-Ta 2 O 5 . Calculation results indicated that the band gap and band edge position are determined by interactions between the atomic core and valence electrons, the overlap of valence electronic states, and the localization of valence states. Ta 3 N 5 and TaON are suitable candidates for efficient photocatalysts owing to their photocatalytic water-splitting ability and good utilization efficiency of solar energy. δ-Ta 2 O 5 has a strong oxidation potential and a band gap suitable for absorbing visible light. Thus, it can be applied to photocatalytic degradation of most pollutants. Although a-Ta 2 O 5 , ε-Ta 2 O 5 , and β-Ta 2 O 5 cannot be directly used as photocatalysts, they can still be applied to modify conventional Ta-O-N photocatalysts, owing to their similar composition and structure. These calculation results will be helpful as reference data for analyzing the photocatalytic performance of more complicated Ta-O-N functional materials. On the basis of these findings, one could design novel Ta-O-N functional materials for specific photocatalytic applications by tuning the composition and crystal structure.

Study of critical behavior in concrete during curing by application of dynamic linear and nonlinear means.

PubMed

Lacouture, Jean-Christoph; Johnson, Paul A; Cohen-Tenoudji, Frederic

2003-03-01

The monitoring of both linear and nonlinear elastic properties of a high performance concrete during curing is presented by application of compressional and shear waves. To follow the linear elastic behavior, both compressional and shear waves are used in wide band pulse echo mode. Through the value of the complex reflection coefficient between the cell material (Lucite) and the concrete within the cell, the elastic moduli are calculated. Simultaneously, the transmission of a continuous compressional sine wave at progressively increasing drive levels permits us to calculate the nonlinear properties by extracting the harmonics amplitudes of the signal. Information regarding the chemical evolution of the concrete based upon the reaction of hydration of cement is obtained by monitoring the temperature inside the sample. These different types of measurements are linked together to interpret the critical behavior.

Topological insulators double perovskites: A2TePoO6 (A = Ca, Sr, Ba)

NASA Astrophysics Data System (ADS)

Lee, Po-Han; Zhou, Jian; Pi, Shu-Ting; Wang, Yin-Kuo

2017-12-01

Based on first-principle calculations and direct density functional theory calculations of surface bands, we predict a new class of three-dimensional (3D) Z2 topological insulators (TIs) with larger bulk bandgaps up to 0.4 eV in double perovskite materials A2TePoO6 (A = Ca, Sr, and Ba). The larger nontrivial gaps are induced by the symmetry-protected band contact along with band inversion occurring in the absence of spin-orbit coupling (SOC) making the SOC more effective than conventional TIs. The proposed materials are chemically inert and more robust to surface perturbations due to its intrinsic protection layer. This study provides the double perovskite material as a rich platform to design new TI-based electronic devices.

Electronic structure of antifluorite Cu2X (X = S, Se, Te) within the modified Becke-Johnson potential plus an on-site Coulomb U.

PubMed

Zhang, Yubo; Wang, Youwei; Xi, Lili; Qiu, Ruihao; Shi, Xun; Zhang, Peihong; Zhang, Wenqing

2014-02-21

The traditional photon absorbers Cu2-xX (X = S, Se, and Te) have regained significant research attention in the search of earth-abundant photovoltaic materials. These moderate- and narrow-gap materials have also been shown to exhibit excellent thermoelectric properties recently. However, semimetallic band structures with inverted band orderings are predicted for antifluorite structure Cu2X using density functional theory with the local density approximation or the generalized gradient approximation. We find that semiconducting band structures and normal band orderings can be obtained using the modified Becke-Johnson potential plus an on-site Coulomb U (the mBJ+U approach), which is consistent with our earlier finding for diamond-like Cu-based multinary semiconductors [Y. Zhang, J. Zhang, W. Gao, T. A. Abtew, Y. Wang, P. Zhang, and W. Zhang, J. Chem. Phys. 139, 184706 (2013)]. The trend of the chemical bonding of Cu2X is analyzed, which shows that the positions of the valence band maximum and conduction band minimum are strongly affected by the inter-site pd and intra-site sp hybridizations, respectively. The calculated gaps of Cu2S and Cu2Se still seem to be underestimated compared with experimental results. We also discuss the effects of different structural phases and Cu disordering and deficiency on the bandgaps of these materials.

Complex band structure and electronic transmission eigenchannels

NASA Astrophysics Data System (ADS)

Jensen, Anders; Strange, Mikkel; Smidstrup, Søren; Stokbro, Kurt; Solomon, Gemma C.; Reuter, Matthew G.

2017-12-01

It is natural to characterize materials in transport junctions by their conductance length dependence, β. Theoretical estimations of β are made employing two primary theories: complex band structure and density functional theory (DFT) Landauer transport. It has previously been shown that the β value derived from total Landauer transmission can be related to the β value from the smallest |ki| complex band; however, it is an open question whether there is a deeper relationship between the two. Here we probe the details of the relationship between transmission and complex band structure, in this case individual eigenchannel transmissions and different complex bands. We present calculations of decay constants for the two most conductive states as determined by complex band structure and standard DFT Landauer transport calculations for one semi-conductor and two molecular junctions. The molecular junctions show that both the length dependence of the total transmission and the individual transmission eigenvalues can be, almost always, found through the complex band structure. The complex band structure of the semi-conducting material, however, does not predict the length dependence of the total transmission but only of the individual channels, at some k-points, due to multiple channels contributing to transmission. We also observe instances of vertical bands, some of which are the smallest |ki| complex bands, that do not contribute to transport. By understanding the deeper relationship between complex bands and individual transmission eigenchannels, we can make a general statement about when the previously accepted wisdom linking transmission and complex band structure will fail, namely, when multiple channels contribute significantly to the transmission.

Materials and systems for unassisted photoelectrochemical solar fuels production (Conference Presentation)

NASA Astrophysics Data System (ADS)

Lee, Jae Sung

2016-10-01

About 400 semiconductor solids are known to have photocatalytic activity for water splitting. Yet there is no single material that could satisfy all the requirements for desired photocatalysts: i) suitable band gap energy (1.7 eV< Eg < 2.3 eV) for high efficiency, ii) proper band position for reduction and/or oxidation of water, iii) long-term stability in aqueous solutions, iv) low cost, v) high crystallinity, and vi) high conductivity. Hence, in the selection of photocatalytic materials, we better start from intrinsically stable materials made of earth-abundant elements. The band bap energy is also the primary consideration to absorb ample amount of solar energy of wide wavelength spectrum. It sets the limit of theoretically maximum efficiency and it could also be extended by band engineering techniques. Upon selection of the candidate materials, we can also modify the materials for full utilization their potentials. The main path of efficiency loss in PEC water splitting process is recombination of photoelectrons and holes. We discuss the material designs including i) p-n heterojunction photoanodes for effective electron-hole separation, ii) electron highway to facilitate interparticle electron transfer, iii) metal or anion doping to improve conductivity of the semiconductor and to extend the range of light absorption, iv) one-dimensional nanomaterials to secure a short hole diffusion distance and vectoral electron transfer, and v) loading co-catalysts for facile charge separation. High efficiency has been demonstrated for all these examples due to efficient electron-hole separation. Finally, total systems for unassisted solar fuel production are demonstrated.

[Design and Preparation of Plant Bionic Materials Based on Optical and Infrared Features Simulation].

PubMed

Jiang, Xiao-jun; Lu, Xu-liang; Pan, Jia-liang; Zhang, Shuan-qin

2015-07-01

Due to the life characteristics such as physiological structure and transpiration, plants have unique optical and infrared features. In the optical band, because of the common effects of chlorophyll and water, plant leafs show spectral reflectance characteristics change in 550, 680, 1400 and 1900 nm significantly. In the infrared wave band, driven by transpiration, plants could regulate temperature on their own initiative, which make the infrared characteristics of plants different from artificial materials. So palnt bionic materials were proposed to simulate optical and infrared characteristics of plants. By analyzing formation mechanism of optical and infrared features about green plants, the component design and heat-transfer process of plants bionic materials were studied, above these the heat-transfer control formulation was established. Based on water adsorption/release compound, optical pigments and other man-made materials, plant bionic materials preparation methods were designed which could simulate the optical and infrared features of green plants. By chemical casting methods plant bionic material films were prepared, which use polyvinyl alcohol as film forming and water adsorption/release compound, and use optical pigments like chrome green and macromolecule yellow as colouring materials. The research conclusions achieved by testings figured out: water adsorption/release testing showed that the plant bionic materials with a certain thickness could absorb 1.3 kg water per square meter, which could satisfy the water usage of transpiration simulation one day; the optical and infrared simulated effect tests indicated that the plant bionic materials could preferably simulate the spectral reflective performance of green plants in optical wave band (380-2500 nm, expecially in 1400 and 1900 nm which were water absorption wave band of plants), and also it had similar daily infrared radiation variations with green plants, daily average radiation temperature difference was 0.37 degrees C, maximum radiation temperature difference was 0.9 degrees C; so according to the testing results, the materials behave well plant bionic performance.

A colored leg banding technique for Amazona parrots

USGS Publications Warehouse

Meyers, J.M.

1995-01-01

A technique for individual identification of Amazona was developed using plastic leg bands. Bands were made from 5- and 7-mm-wide strips of laminated PVC coiled 2.5 times with an inside diameter 4-5 mm gt the maximum diameter of the parrot's leg. Seventeen parrots were captured in Puerto Rico, marked with individual plastic leg bands, and observed for 204-658 d with only one lost or damaged plastic band. Plastic leg bands did not cause injury to or calluses on parrots' legs. The plastic material used for making leg bands was available in 18 colors in 1994, which would allow unique marking of 306 individuals using one plastic leg band on each leg.

New tension band material for fixation of transverse olecranon fractures: a biomechanical study.

PubMed

Lalonde, James Allen; Rabalais, R David; Mansour, Alfred; Burger, Evalina L; Riemer, Barry L; Lu, Yun; Baratta, Richard V

2005-10-01

This study tested the use of braided polyethylene cable as an option for repairing transverse olecranon fractures. Six cadaveric elbows underwent a transverse olecranon osteotomy followed by fixation with tension band constructs using 18-gauge wire and Secure-Strand (U.S. Surgical, North Haven, Conn). Distraction forces up to 450 N were applied to the triceps tendon while measuring fracture displacement with an extensometer. The average maximal fracture gap with the standard AO tension band technique using stainless steel wire was 0.66 +/- 0.43 mm, as opposed to 0.68 +/- 0.45 mm with braided polyethylene cable. A paired t test indicated no significant difference between the two materials. These results support the feasibility of braided polyethylene cable as an alternative to the standard steel-wire tension band.

Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy

NASA Astrophysics Data System (ADS)

Evans, D. A.; McGlynn, A. G.; Towlson, B. M.; Gunn, M.; Jones, D.; Jenkins, T. E.; Winter, R.; Poolton, N. R. J.

2008-02-01

Using synchrotron-based luminescence excitation spectroscopy in the energy range 4-20 eV at 8 K, the indirect Γ-X optical band-gap transition in cubic boron nitride is determined as 6.36 ± 0.03 eV, and the quasi-direct band-gap energy of hexagonal boron nitride is determined as 5.96 ± 0.04 eV. The composition and structure of the materials are self-consistently established by optically detected x-ray absorption spectroscopy, and both x-ray diffraction and Raman measurements on the same samples give independent confirmation of their chemical and structural purity: together, the results are therefore considered as providing definitive measurements of the optical band-gap energies of the two materials.

Progression in structural, magnetic and electrical properties of La-doped group IV elements

NASA Astrophysics Data System (ADS)

Deepapriya, S.; Annie Vinosha, P.; Rodney, John D.; Jerome Das, S.

2018-04-01

Progression of group IV elements such as zinc ferrite (ZnFe2O4), cobalt ferrite (CoFe2O4) was synthesized by doping lanthanum (La), via adopting a facile co-precipitation method. Doping hefty rare earth ion in spinel structure can amend to the physical properties of the lattice, which can be used in the enhancement of magnetic and electrical properties of the as-synthesized nanomaterial, it is vital to metamorphose and optimize its micro structural and magnetic features. The structural properties of the samples was analysed by powder X-ray diffraction (XRD), Fourier transform infrared (FTIR), Transmission electron microscopy (TEM) and UV-visible spectral analysis (UV-vis) reveals the optical property and optical band gap. The magnetic properties were evaluated using a vibrating sample magnetometer (VSM), the presence of functional group was confirmed by FTIR. XRD analyses elucidates that the synthesized samples zinc and cobalt had a spinel structure. From TEM analyses the morphology and diameter of the particle was observed. The substituted rare earth ions in Zinc ferrite inhibit the grain growth of the materials in an efficient manner compared with that of the Cobalt ferrite.

Fe/Co doped molybdenum diselenide: a promising two-dimensional intermediate-band photovoltaic material.

PubMed

Zhang, Jiajia; He, Haiyan; Pan, Bicai

2015-05-15

An intermediate-band (IB) photovoltaic material is an important candidate in developing the new-generation solar cell. In this paper, we propose that the Fe-doped or the Co-doped MoSe2 just meets the required features in IB photovoltaic materials. Our calculations demonstrate that when the concentration of the doped element reaches 11.11%, the doped MoSe2 shows a high absorptivity for both infrared and visible light, where the photovoltaic efficiency of the doped MoSe2 is as high as 56%, approaching the upper limit of photovoltaic efficiency of IB materials. So, the Fe- or Co-doped MoSe2 is a promising two-dimensional photovoltaic material.

Estimation of photonic band gap in the hollow core cylindrical multilayer structure

NASA Astrophysics Data System (ADS)

Chourasia, Ritesh Kumar; Singh, Vivek

2018-04-01

The propagation characteristic of two hollow core cylindrical multilayer structures having high and low refractive index contrast of cladding regions have been studied and compared at two design wavelengths i.e. 1550 nm and 632.8 nm. With the help of transfer matrix method a relation between the incoming light wave and outgoing light wave has been developed using the boundary matching technique. In high refractive index contrast, small numbers of layers are sufficient to provide perfect band gap in both design wavelengths. The spectral position and width of band gap is highly depending on the optical path of incident light in all considered cases. For sensing application, the sensitivity of waveguide can be obtained either by monitoring the width of photonic band gap or by monitoring the spectral shift of photonic band gap. Change in the width of photonic band gap with the core refractive index is larger in high refractive index contrast of cladding materials. However, in the case of monitoring the spectral shift of band gap, the obtained sensitivity is large for low refractive index contrast of cladding materials and further it increases with increase of design wavelength.

Circularly Polarized S Band Dual Frequency Square Patch Antenna Using Glass Microfiber Reinforced PTFE Composite

PubMed Central

Samsuzzaman, M.; Islam, M. T.; Arshad, Haslina; Mandeep, J. S.; Misran, N.

2014-01-01

Circularly polarized (CP) dual frequency cross-shaped slotted patch antenna on 1.575 mm thick glass microfiber reinforced polytetrafluoroethylene (PTFE) composite material substrate is designed and fabricated for satellite applications. Asymmetric cross-shaped slots are embedded in the middle of the square patch for CP radiation and four hexagonal slots are etched on the four sides of the square patch for desired dual frequency. Different substrate materials have been analysed to achieve the desired operating band. The experimental results show that the impedance bandwidth is approximately 30 MHz (2.16 GHz to 2.19 GHz) for lower band and 40 MHz (3.29 GHz to 3.33 GHz) for higher band with an average peak gain of 6.59 dBiC and 5.52 dBiC, respectively. Several optimizations are performed to obtain the values of the antenna physical parameters. Moreover, the proposed antenna possesses compactness, light weight, simplicity, low cost, and circularly polarized. It is an attractive candidate for dual band satellite antennas where lower band can be used for uplink and upper band can be used for downlink. PMID:24982943

Complete theory of symmetry-based indicators of band topology.

PubMed

Po, Hoi Chun; Vishwanath, Ashvin; Watanabe, Haruki

2017-06-30

The interplay between symmetry and topology leads to a rich variety of electronic topological phases, protecting states such as the topological insulators and Dirac semimetals. Previous results, like the Fu-Kane parity criterion for inversion-symmetric topological insulators, demonstrate that symmetry labels can sometimes unambiguously indicate underlying band topology. Here we develop a systematic approach to expose all such symmetry-based indicators of band topology in all the 230 space groups. This is achieved by first developing an efficient way to represent band structures in terms of elementary basis states, and then isolating the topological ones by removing the subset of atomic insulators, defined by the existence of localized symmetric Wannier functions. Aside from encompassing all earlier results on such indicators, including in particular the notion of filling-enforced quantum band insulators, our theory identifies symmetry settings with previously hidden forms of band topology, and can be applied to the search for topological materials.Understanding the role of topology in determining electronic structure can lead to the discovery, or appreciation, of materials with exotic properties such as protected surface states. Here, the authors present a framework for identifying topologically distinct band-structures for all 3D space groups.

Dilatational band formation in bone

PubMed Central

Poundarik, Atharva A.; Diab, Tamim; Sroga, Grazyna E.; Ural, Ani; Boskey, Adele L.; Gundberg, Caren M.; Vashishth, Deepak

2012-01-01

Toughening in hierarchically structured materials like bone arises from the arrangement of constituent material elements and their interactions. Unlike microcracking, which entails micrometer-level separation, there is no known evidence of fracture at the level of bone’s nanostructure. Here, we show that the initiation of fracture occurs in bone at the nanometer scale by dilatational bands. Through fatigue and indentation tests and laser confocal, scanning electron, and atomic force microscopies on human and bovine bone specimens, we established that dilatational bands of the order of 100 nm form as ellipsoidal voids in between fused mineral aggregates and two adjacent proteins, osteocalcin (OC) and osteopontin (OPN). Laser microdissection and ELISA of bone microdamage support our claim that OC and OPN colocalize with dilatational bands. Fracture tests on bones from OC and/or OPN knockout mice (OC−/−, OPN−/−, OC-OPN−/−;−/−) confirm that these two proteins regulate dilatational band formation and bone matrix toughness. On the basis of these observations, we propose molecular deformation and fracture mechanics models, illustrating the role of OC and OPN in dilatational band formation, and predict that the nanometer scale of tissue organization, associated with dilatational bands, affects fracture at higher scales and determines fracture toughness of bone. PMID:23129653

Note: Observation of a new electronically excited state of cobalt monoxide

NASA Astrophysics Data System (ADS)

Zang, Jianzheng; Zhang, Qun; Qin, Chengbing; Gu, Zhong; Bai, Xilin; Chen, Yang

2012-11-01

The laser-induced fluorescence excitation spectra of jet-cooled CoO molecules have been recorded in the energy region of 21 800—25 000 cm-1. Apart from the seven vibronic bands assigned to the known G4Φ9/2(υ') - X4Δ7/2(υ″ = 0) progression [M. Barnes, D. J. Clouthier, P. G. Hajigeorgiou, G. Huang, C. T. Kingston, A. J. Merer, G. F. Metha, J. R. D. Peers, and S. J. Rixon, J. Mol. Spectrosc. 186, 374 (1997), 10.1006/jmsp.1997.7456], we observed a new band system assignable to the [22.95]4Δ7/2(υ' = 0 - 4) - X4Δ7/2(υ″ = 0) progression. Extensive perturbations among these vibronic bands have been revealed by means of reduced energy plots. The new electronically excited 4Δ state has been determined to be most likely of an electronic configuration (2pπ)3(4sσ)2(3dδ)3(3dπ)3 based on the charge-transferred promotion model.

Mid-infrared reflectlance spectra (2.3-22 micions) of sulfur, gold, KBr, MgO, and halon

NASA Technical Reports Server (NTRS)

Nash, D. B.

1986-01-01

Biconical diffuse reflectance spectra in the mid-infrared are presented for powder and other solid forms of sulfur, gold, potassium bromide, magnesium oxide, and halon. Comparisons are made with previously published results of other investigators, and recommendations are made regarding the relative usefulnees of these materials as reflectance standards in the mid-IR. Sulfur has strong intrinsic bands at wavelengths greater than 7 microns that must be taken into account for its use as a reflectance standard. Some sulfur samples have hydrocarbon contaminants and in powder form may have adsorbed water, both of which produce bands in the 3-4-micron region. Potassium bromide has several weak intrinsic bands and is very sensitive to adsorbed water contamination; otherwise it is a good IR reference material. Magnesium oxide and halon have major bands structure and low reflectivity at wavelengths greater than 2.6 microns and thus are unsuitable as reference materials in the mid-IR. Vapor-deposited gold on fine sandpaper (600 grit) is very bright, spectrally flat, and fairly diffuse, so it is the superior material (of those examined) for reflectance reference material throughout the IR. Fine gold powder, on the other hand, is much less bright than evaporated gold, and its reflectivity at wavelengths greater than its particle size is highly sensitive to particle packing density.

Alpha Lead Oxide (α-PbO): A New 2D Material with Visible Light Sensitivity.

PubMed

Kumar, Prashant; Liu, Jing; Ranjan, Pranay; Hu, Yaowu; Yamijala, Sharma Srkc; Pati, Swapan K; Irudayaraj, Joseph; Cheng, Gary J

2018-03-01

Even though transition metal dichalcogenides (TMDCs) are deemed to be novel photonic and optoelectronic 2D materials, the visible band gap being often limited to monolayer, hampers their potential in niche applications due to fabrication challenges. Uncontrollable defects and degraded functionalities at elevated temperature and under extreme environments further restrict their prospects. To address such limitations, the discovery of a new 2D material, α-PbO is reported. Micromechanical as well as sonochemical exfoliation of 2D atomic sheets of α-PbO are demonstrated and its optical behavior is investigated. Spectroscopic investigations indicate layer dependent band gaps. In particular, even multilayered PbO sheets exhibit visible band gap > 2 eV (direct) which is rare among semiconducting 2D materials. The emission lifetime of multilayer PbO atomic sheets is 7 ns (dim light) as compared to the monolayer which gives 2.5 ns lifetime and an intense light. Density functional theory calculations of layer dependent band structure of α-PbO matches well with experimental results. Experimental findings suggest that PbO atomic sheets exhibit hydrophobic nature, thermal robustness, microwave stability, anti-corrosive behaviour and acid resistance. This new low-cost, abundant and robust 2D material is expected to find many applications in the fields of electronics, optoelectronics, sensors, photocatalysis and energy storage. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Classification of intelligence quotient via brainwave sub-band power ratio features and artificial neural network.

PubMed

Jahidin, A H; Megat Ali, M S A; Taib, M N; Tahir, N Md; Yassin, I M; Lias, S

2014-04-01

This paper elaborates on the novel intelligence assessment method using the brainwave sub-band power ratio features. The study focuses only on the left hemisphere brainwave in its relaxed state. Distinct intelligence quotient groups have been established earlier from the score of the Raven Progressive Matrices. Sub-band power ratios are calculated from energy spectral density of theta, alpha and beta frequency bands. Synthetic data have been generated to increase dataset from 50 to 120. The features are used as input to the artificial neural network. Subsequently, the brain behaviour model has been developed using an artificial neural network that is trained with optimized learning rate, momentum constant and hidden nodes. Findings indicate that the distinct intelligence quotient groups can be classified from the brainwave sub-band power ratios with 100% training and 88.89% testing accuracies. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

Size-induced axial band structure and directional flow of a ternary-size granular material in a 3-D horizontal rotating drum

NASA Astrophysics Data System (ADS)

Yang, Shiliang; Sun, Yuhao; Ma, Honghe; Chew, Jia Wei

2018-05-01

Differences in the material property of the granular material induce segregation which inevitably influences both natural and industrial processes. To understand the dynamical segregation behavior, the band structure, and also the spatial redistribution of particles induced by the size differences of the particles, a ternary-size granular mixture in a three-dimensional rotating drum operating in the rolling flow regime is numerically simulated using the discrete element method. The results demonstrate that (i) the axial bands of the medium particles are spatially sandwiched in between those of the large and small ones; (ii) the total mass in the active and passive regions is a global parameter independent of segregation; (iii) nearly one-third of all the particles are in the active region, with the small particles having the highest mass fraction; (iv) the axial bands initially appear near the end wall, then become wider and purer in the particular species with time as more axial bands form toward the axial center; and (v) the medium particle type exhibits segregation later and has the narrowest axial bandwidth and least purity in the bands. Compared to the binary-size system, the presence of the medium particle type slightly increases the total mass in the active region, leads to larger mass fractions of the small and large particle types in the active region, and enhances the axial segregation in the system. The results obtained in the current work provide valuable insights regarding size segregation, and band structure and formation in the rotating drum with polydisperse particles.

Geomechanical Modeling of Deformation Banding in the Navajo Sandstone, San Rafael Monocline, Utah

NASA Astrophysics Data System (ADS)

Gutierrez, M.; Sundal, A.; Petrie, E. S.

2017-12-01

Deformation bands are ubiquitous geological features in many types of rocks. Depending on their micro-structure, they can act either as conduits or barriers to fluid flow. Given the significant roles deformation bands play in fluid flow and chemical transport in rocks, it is important to develop fundamental understanding of their origin, and their characteristics as they relate with the host rock properties and their depositional and structural-geological history. We present a forward-modeling technique based on the geomechanical Bifurcation Theory (BT) to predict the formation of deformation bands in sandstone. According to BT, the formation of deformation bands is a result of strain location, which in turn stems from instability in the stress-strain response of materials during loading. Due to bifurcation, a material which undergoes homogeneous deformation can reach a point at which the material experiences instability and deformation starts to become non-homogenous. We implemented BT in the commercially-available geomechanical code FLAC (Fast Langragian Analysis of Continua) and applied it in the field-scale modeling of deformation banding in the Navajo Sandstone in the San Rafael Monocline in Utah induced by fault propagation folding. The results show that geomechanical modeling using BT has a powerful potential to simulate the physical processes in the formation of deformation banding in rocks. Predicted deformation bands, specifically the pervasive bedding-parallel bands in the Navajo sandstone formation, normal faulting in the upper limb and reverse faulting in the lower limb, are generally in agreement with field observations. Predictions indicate that the pervasive bedding-parallel bands in the Navajo Sandstone are transitional compaction-shear bands with alternating zones of volumetric compaction and dilation. These predictions are consistent with petrographic analysis of thin sections of rock samples from the Navajo Sandstone. The most important parameter in the geomechanical modeling is the dilation angle in relation to the friction angle of the host rock. These parameters, as well the elastic properties, should evolve during the geologic history of a site, thus, the main challenge in the modeling is how to calibrate these parameters to yield consistent results.

Pseudopotential calculations and photothermal lensing measurements of two-photon absorption in solids

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, W.T. III

1985-11-04

We have studied two-photon absorption in solids theoretically and experimentally. We have shown that it is possible to use accurate band structure techniques to compute two-photon absorption spectra within 15% of measured values in a wide band-gap material, ZnS. The empirical pseudopotential technique that we used is significantly more accurate than previous models of two-photon absorption in zinc blende materials, including present tunneling theories (which are essentially parabolic-band results in disguise) and the nonparabolic-band formalism of Pidgeon et al. and Weiler. The agreement between our predictions and previous measurements allowed us to use ZnS as a reference material in ordermore » to validate a technique for measuring two-photon absorption that was previously untried in solids, pulsed dual-beam thermal lensing. With the validated technique, we examined nonlinear absorption in one other crystal (rutile) and in several glasses, including silicates, borosilicates, and one phosphate glass. Initially, we believed that the absorption edges of all the materials were comparable; however, subsequent evidence suggested that the effective band-gap energies of the glasses were above the energy of two photons in our measurement. Therefore, we attribute the nonlinear absorption that we observed in glasses to impurities or defects. The measured nonlinear absorption coefficients were of the order of a few cm/TW in the glasses and of the order of 10 cm/GW in the crystals, four orders of magnitude higher than in glasses. 292 refs.« less

Apparatus for loading a band saw blade

DOEpatents

Reeves, Steven R.

1990-01-01

A band saw blade is loaded between pairs of guide wheels upon tensioning the blade by guiding the blade between pairs of spaced guide plates which define converging slots that converge toward the guide wheels. The approach is particularly useful in loading blades on underwater band saw machines used to cut radioactive materials.

Electronic structure and p-type doping of ZnSnN2

NASA Astrophysics Data System (ADS)

Wang, Tianshi; Janotti, Anderson; Ni, Chaoying

ZnSnN2 is a promising solar-cell absorber material composed of earth abundant elements. Little is known about doping, defects, and how the valence and conduction bands in this material align with the bands in other semiconductors. Using density functional theory with the the Heyd-Scuseria-Ernzerhof hybrid functional (HSE06), we investigate the electronic structure of ZnSnN2, its band alignment to other semiconductors, such as GaN and ZnO, the possibility of p-type doping, and the possible causes of the observed unintentional n-type conductivity. We find that the position of the valence-band maximum of ZnSnN2 is 0.55 eV higher than that of GaN, yet the conduction-band minimum is close to that in ZnO. As possible p-type dopants, we explore Li, Na, and K substituting on the Zn site. Finally, we discuss the cause of unintentional n-type conductivity by analyzing the position of the conduction-band minimum with respect to that of GaN and ZnO.

Observation of Dirac-like energy band and ring-torus Fermi surface associated with the nodal line in topological insulator CaAgAs

NASA Astrophysics Data System (ADS)

Takane, Daichi; Nakayama, Kosuke; Souma, Seigo; Wada, Taichi; Okamoto, Yoshihiko; Takenaka, Koshi; Yamakawa, Youichi; Yamakage, Ai; Mitsuhashi, Taichi; Horiba, Koji; Kumigashira, Hiroshi; Takahashi, Takashi; Sato, Takafumi

2018-01-01

One of key challenges in current material research is to search for new topological materials with inverted bulk-band structure. In topological insulators, the band inversion caused by strong spin-orbit coupling leads to opening of a band gap in the entire Brillouin zone, whereas an additional crystal symmetry such as point-group and nonsymmorphic symmetries sometimes prohibits the gap opening at/on specific points or line in momentum space, giving rise to topological semimetals. Despite many theoretical predictions of topological insulators/semimetals associated with such crystal symmetries, the experimental realization is still relatively scarce. Here, using angle-resolved photoemission spectroscopy with bulk-sensitive soft-x-ray photons, we experimentally demonstrate that hexagonal pnictide CaAgAs belongs to a new family of topological insulators characterized by the inverted band structure and the mirror reflection symmetry of crystal. We have established the bulk valence-band structure in three-dimensional Brillouin zone, and observed the Dirac-like energy band and ring-torus Fermi surface associated with the line node, where bulk valence and conducting bands cross on a line in the momentum space under negligible spin-orbit coupling. Intriguingly, we found that no other bands cross the Fermi level and therefore the low-energy excitations are solely characterized by the Dirac-like band. CaAgAs provides an excellent platform to study the interplay among low-energy electron dynamics, crystal symmetry, and exotic topological properties.

Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets.

PubMed

Lv, Ruitao; Robinson, Joshua A; Schaak, Raymond E; Sun, Du; Sun, Yifan; Mallouk, Thomas E; Terrones, Mauricio

2015-01-20

CONSPECTUS: In the wake of the discovery of the remarkable electronic and physical properties of graphene, a vibrant research area on two-dimensional (2D) layered materials has emerged during the past decade. Transition metal dichalcogenides (TMDs) represent an alternative group of 2D layered materials that differ from the semimetallic character of graphene. They exhibit diverse properties that depend on their composition and can be semiconductors (e.g., MoS2, WS2), semimetals (e.g., WTe2, TiSe2), true metals (e.g., NbS2, VSe2), and superconductors (e.g., NbSe2, TaS2). The properties of TMDs can also be tailored according to the crystalline structure and the number and stacking sequence of layers in their crystals and thin films. For example, 2H-MoS2 is semiconducting, whereas 1T-MoS2 is metallic. Bulk 2H-MoS2 possesses an indirect band gap, but when 2H-MoS2 is exfoliated into monolayers, it exhibits direct electronic and optical band gaps, which leads to enhanced photoluminescence. Therefore, it is important to learn to control the growth of 2D TMD structures in order to exploit their properties in energy conversion and storage, catalysis, sensing, memory devices, and other applications. In this Account, we first introduce the history and structural basics of TMDs. We then briefly introduce the Raman fingerprints of TMDs of different layer numbers. Then, we summarize our progress on the controlled synthesis of 2D layered materials using wet chemical approaches, chemical exfoliation, and chemical vapor deposition (CVD). It is now possible to control the number of layers when synthesizing these materials, and novel van der Waals heterostructures (e.g., MoS2/graphene, WSe2/graphene, hBN/graphene) have recently been successfully assembled. Finally, the unique optical, electrical, photovoltaic, and catalytic properties of few-layered TMDs are summarized and discussed. In particular, their enhanced photoluminescence (PL), photosensing, photovoltaic conversion, and hydrogen evolution reaction (HER) catalysis are discussed in detail. Finally, challenges along each direction are described. For instance, how to grow perfect single crystalline monolayer TMDs without the presence of grain boundaries and dislocations is still an open question. Moreover, the morphology and crystal structure control of few-layered TMDs still requires further research. For wet chemical approaches and chemical exfoliation methods, it is still a significant challenge to control the lateral growth of TMDs without expansion in the c-axis direction. In fact, there is plenty of room in the 2D world beyond graphene. We envisage that with increasing progress in the controlled synthesis of these systems the unusual properties of mono- and few-layered TMDs and TMD heterostructures will be unveiled.

A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour

NASA Astrophysics Data System (ADS)

Yadav, Shivendra; Sharma, Dheeraj; Chandan, Bandi Venkata; Aslam, Mohd; Soni, Deepak; Sharma, Neeraj

2018-05-01

In this article, the impact of gate-underlap with hetero material (low band gap) has been investigated in terms of DC and Analog/RF parameters by proposed device named as hetero material gate-underlap electrically doped TFET (HM-GUL-ED-TFET). Gate-underlap resolves the problem of ambipolarity, gate leakage current (Ig) and slightly improves the gate to drain capacitance, but DC performance is almost unaffected. Further, the use of low band gap material (Si0.5 Ge) in proposed device causes a drastic improvement in the DC as well as RF figures of merit. We have investigated the Si0.5 Ge as a suitable candidate among different low band gap materials. In addition, the sensitivity of gate-underlap in terms of gate to drain inversion and parasitic capacitances has been studied for HM-GUL-ED-TFET. Further, relatively it is observed that gate-underlap is a better way than drain-underlap in the proposed structure to improve Analog/RF performances without degrading the DC parameters of device. Additionally, hetero-junction alignment analysis has been done for fabrication feasibility.

Band structure engineering of 2D materials using patterned dielectric superlattices.

PubMed

Forsythe, Carlos; Zhou, Xiaodong; Watanabe, Kenji; Taniguchi, Takashi; Pasupathy, Abhay; Moon, Pilkyung; Koshino, Mikito; Kim, Philip; Dean, Cory R

2018-05-07

The ability to manipulate electrons in two-dimensional materials with external electric fields provides a route to synthetic band engineering. By imposing artificially designed and spatially periodic superlattice potentials, electronic properties can be further altered beyond the constraints of naturally occurring atomic crystals 1-5 . Here, we report a new approach to fabricate high-mobility superlattice devices by integrating surface dielectric patterning with atomically thin van der Waals materials. By separating the device assembly and superlattice fabrication processes, we address the intractable trade-off between device processing and mobility degradation that constrains superlattice engineering in conventional systems. The improved electrostatics of atomically thin materials allows smaller wavelength superlattice patterns relative to previous demonstrations. Moreover, we observe the formation of replica Dirac cones in ballistic graphene devices with sub-40 nm wavelength superlattices and report fractal Hofstadter spectra 6-8 under large magnetic fields from superlattices with designed lattice symmetries that differ from that of the host crystal. Our results establish a robust and versatile technique for band structure engineering of graphene and related van der Waals materials with dynamic tunability.

Loading ultracold gases in topological Floquet bands: the fate of current and center-of-mass responses

NASA Astrophysics Data System (ADS)

Dauphin, Alexandre; Tran, Duc-Thanh; Lewenstein, Maciej; Goldman, Nathan

2017-06-01

Topological band structures can be designed by subjecting lattice systems to time-periodic modulations, as was proposed for irradiated graphene, and recently demonstrated in two-dimensional (2D) ultracold gases and photonic crystals. However, changing the topological nature of Floquet Bloch bands from trivial to non-trivial, by progressively launching the time-modulation, is necessarily accompanied with gap-closing processes: this has important consequences for the loading of particles into a target Floquet band with non-trivial topology, and hence, on the subsequent measurements. In this work, we analyse how such loading sequences can be optimized in view of probing the topology of 2D Floquet bands through transport measurements. In particular, we demonstrate the robustness of center-of-mass responses, as compared to current responses, which present important irregularities due to an interplay between the micro-motion of the drive and inter-band interference effects. The results presented in this work illustrate how probing the center-of-mass displacement of atomic clouds offers a reliable method to detect the topology of Floquet bands, after realistic loading sequences.

Time-resolved tomography using acoustic emissions in the laboratory, and application to sandstone compaction

NASA Astrophysics Data System (ADS)

Brantut, Nicolas

2018-02-01

Acoustic emission and active ultrasonic wave velocity monitoring are often performed during laboratory rock deformation experiments, but are typically processed separately to yield homogenised wave velocity measurements and approximate source locations. Here I present a numerical method and its implementation in a free software to perform a joint inversion of acoustic emission locations together with the three-dimensional, anisotropic P-wave structure of laboratory samples. The data used are the P-wave first arrivals obtained from acoustic emissions and active ultrasonic measurements. The model parameters are the source locations and the P-wave velocity and anisotropy parameter (assuming transverse isotropy) at discrete points in the material. The forward problem is solved using the fast marching method, and the inverse problem is solved by the quasi-Newton method. The algorithms are implemented within an integrated free software package called FaATSO (Fast Marching Acoustic Emission Tomography using Standard Optimisation). The code is employed to study the formation of compaction bands in a porous sandstone. During deformation, a front of acoustic emissions progresses from one end of the sample, associated with the formation of a sequence of horizontal compaction bands. Behind the active front, only sparse acoustic emissions are observed, but the tomography reveals that the P-wave velocity has dropped by up to 15%, with an increase in anisotropy of up to 20%. Compaction bands in sandstones are therefore shown to produce sharp changes in seismic properties. This result highlights the potential of the methodology to image temporal variations of elastic properties in complex geomaterials, including the dramatic, localised changes associated with microcracking and damage generation.

Photophysical Properties of Novel Organic, Inorganic, and Hybrid Semiconductor Materials

NASA Astrophysics Data System (ADS)

Chang, Angela Yenchi

For the past 200 years, novel materials have driven technological progress, and going forward these advanced materials will continue to deeply impact virtually all major industrial sectors. Therefore, it is vital to perform basic and applied research on novel materials in order to develop new technologies for the future. This dissertation describes the results of photophysical studies on three novel materials with electronic and optoelectronic applications, namely organic small molecules DTDCTB with C60 and C70, colloidal indium antimonide (InSb) nanocrystals, and an organic-inorganic hybrid perovskite with the composition CH3NH3PbI 3-xClx, using transient absorption (TA) and photoluminescence (PL) spectroscopy. In chapter 2, we characterize the timescale and efficiency of charge separation and recombination in thin film blends comprising DTDCTB, a narrow-band gap electron donor, and either C60 or C70 as an electron acceptor. TA and time-resolved PL studies show correlated, sub-picosecond charge separation times and multiple timescales of charge recombination. Our results indicate that some donors fail to charge separate in donor-acceptor mixed films, which suggests material manipulations may improve device efficiency. Chapter 3 describes electron-hole pair dynamics in strongly quantum-confined, colloidal InSb nanocrystal quantum dots. For all samples, TA shows a bleach feature that, for several picoseconds, dramatically red-shifts prior to reaching a time-independent position. We suggest this unusual red-shift relates transient population flow through two energetically comparable conduction band states. From pump-power-dependent measurements, we also determine biexciton lifetimes. In chapter 4, we examine carrier dynamics in polycrystalline methylammonium lead mixed halide perovskite (CH3NH3PbI3-xCl x) thin films as functions of temperature and photoexcitation wavelength. At room temperature, the long-lived TA signals stand in contrast to PL dynamics, where the latter present a fast decay process prior to slower recombination. We show that this PL feature persists with similar decay amplitude and timescale for temperatures down to the phase transition temperature, and that it depends on pump photon energy at room temperature. Together with high-level electronic structure and dynamics calculations, we suggest the fast PL decay relates a characteristic organic-to-inorganic sub-lattice equilibration timescale at optoelectronic-relevant excitation energies.

Development of deformation band clusters in porous quartz sandstones - Contribution from microstructural analysis and numerical modeling

NASA Astrophysics Data System (ADS)

Philit, S.; Soliva, R.; Chemenda, A. I.

2017-12-01

Because sandstones form good reservoirs for hydrocarbon, water or C02 storage, the understanding of the deformation processes in sandstones is major. The deformation band clusters result from the localization of the deformation in porous sandstones under the form of gathered low-permeability cataclastic deformation bands. It has recently been shown that this localization is favored in extensional tectonics. The clusters measure tens to hundreds of meters in extent and propagate vertically as long as the sandstone is clean. Because the clusters can form several kilometers long networks, they are likely to hamper fluid flow during reservoir exploitation. Yet, the processes of band accumulation linked to the evolution of the clusters to a potential faulting are poorly understood. An integrated study coupling a microscopic analysis of the deformed granular material in clusters from 7 sites in the world and distinct element numerical modeling permits to propose a model for cluster growth. Our microscopic analysis reveals that the clusters display varying degree of cataclasis, with the most important degrees in the bands. This cataclasis is accompanied by porosity reduction (more reduced in thrust Andersonian regime), and increased Particle Size Distribution. This testifies of an important packing and implies an increased number of particle coordination. During deformation, the grain shape is both smoothened and roughened; the averaged values of the roundness and circularity indicate a rapid roughening of the clasts at the first stages of deformation followed by a slight smoothening. The roughening of the clasts in densely packed material induces high friction and strengthens the material. High residual porosity at some band edges suggests a local dilatant behavior of sheared material. Our distinct element numerical models and other particle models in the literature confirm this observation. The development of force chains with low particle coordination at these locations would weaken the stress resistance at the contact points. Hence, the cluster growth would be promoted by the successive localization of bands the edges of preexisting bands. Faulting could occur at any stage of the cluster development, probably favored along interfaces of minimized strength with smooth geometry.

Spectroscopic views of high-Tc superconductors

NASA Astrophysics Data System (ADS)

Wendin, Göran

1989-01-01

Recent progress in the fields of photoelectron spectroscopy, electron energy loss spectroscopy, inverse photoemission, and infrared- and optical reflectivity applied to high-Tc superconductors is analyzed in terms of correlation effects, transport properties and Fermi liquid behaviour. For the CuO2 based materials, a picture emerges of localized holes in copper 3d levels and itinerant holes in oxygen 2p-like bands. A Fermi liquid picture and a superconducting gap is indicated by angle-resolved photo-emission, infrared absorption, and NMR. A Fermi surface is indicated by positron annihilation. Infrared absorption reveals strongly frequency and temperature dependent scattering and polaronic behaviour for frequencies below 0.1 eV. Infrared absorption indicates a maximum superconducting gap of 2Δ/kBTc = 8 and suggests that ordinary samples may show a range of gaps 2 < 2Δ/kBTc < 8 resulting in commonly measured average values of 2Δ/kBTc = 5. An interesting possibility in YBaCuO, suggested by infrared reflectivity and photoconductivity measurements, is that polarons in the CuO2 planes with 0.13 eV excitation energy mediate an attractive interaction between quasi-holes in O 2p-derived conduction bands. The polarons will involve important lattice distortions even if, as is frequently assumed, magnetic polaron effects may be the essential thing.

Spatial interferences in the electron transport of heavy-fermion materials

NASA Astrophysics Data System (ADS)

Zhang, Shu-feng; Liu, Yu; Song, Hai-Feng; Yang, Yi-feng

2016-08-01

The scanning tunneling microscopy/spectroscopy and the point contact spectroscopy represent major progress in recent heavy-fermion research. Both have revealed important information on the composite nature of the emergent heavy-electron quasiparticles. However, a detailed and thorough microscopic understanding of the similarities and differences in the underlying physical processes of these techniques is still lacking. Here we study the electron transport in the normal state of the periodic Anderson lattice by using the Keldysh nonequilibrium Green's function technique. In addition to the well-known Fano interference between the conduction and f -electron channels, our results further reveal the effect of spatial interference between different spatial paths at the interface on the differential conductance and their interesting interplay with the band features such as the hybridization gap and the Van Hove singularity. We find that the spatial interference leads to a weighted average in the momentum space for the electron transport and could cause suppression of the electronic band features under certain circumstances. In particular, it reduces the capability of probing the f -electron spectral weight near the edges of the hybridization gap for large interface depending on the Fermi surface of the lead. Our results indicate an intrinsic inefficiency of the point contact spectroscopy in probing the f electrons.

Structural impact on the eigenenergy renormalization for carbon and silicon allotropes and boron nitride polymorphs

NASA Astrophysics Data System (ADS)

Tutchton, Roxanne; Marchbanks, Christopher; Wu, Zhigang

2018-05-01

The phonon-induced renormalization of electronic band structures is investigated through first-principles calculations based on the density functional perturbation theory for nine materials with various crystal symmetries. Our results demonstrate that the magnitude of the zero-point renormalization (ZPR) of the electronic band structure is dependent on both crystal structure and material composition. We have performed analysis of the electron-phonon-coupling-induced renormalization for two silicon (Si) allotropes, three carbon (C) allotropes, and four boron nitride (BN) polymorphs. Phonon dispersions of each material were computed, and our analysis indicates that materials with optical phonons at higher maximum frequencies, such as graphite and hexagonal BN, have larger absolute ZPRs, with the exception of graphene, which has a considerably smaller ZPR despite having phonon frequencies in the same range as graphite. Depending on the structure and material, renormalizations can be comparable to the GW many-body corrections to Kohn-Sham eigenenergies and, thus, need to be considered in electronic structure calculations. The temperature dependence of the renormalizations is also considered, and in all materials, the eigenenergy renormalization at the band gap and around the Fermi level increases with increasing temperature.

Photonic crystal light source

DOEpatents

Fleming, James G [Albuquerque, NM; Lin, Shawn-Yu [Albuquerque, NM; Bur, James A [Corrales, NM

2004-07-27

A light source is provided by a photonic crystal having an enhanced photonic density-of-states over a band of frequencies and wherein at least one of the dielectric materials of the photonic crystal has a complex dielectric constant, thereby producing enhanced light emission at the band of frequencies when the photonic crystal is heated. The dielectric material can be a metal, such as tungsten. The spectral properties of the light source can be easily tuned by modification of the photonic crystal structure and materials. The photonic crystal light source can be heated electrically or other heating means. The light source can further include additional photonic crystals that exhibit enhanced light emission at a different band of frequencies to provide for color mixing. The photonic crystal light source may have applications in optical telecommunications, information displays, energy conversion, sensors, and other optical applications.

AlGaAs diode pumped tunable chromium lasers

DOEpatents

Krupke, William F.; Payne, Stephen A.

1992-01-01

An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Ying-Jie, E-mail: qfyingjie@iphy.ac.cn; Institute of Physics, Chinese Academy of Sciences, Beijing, 100190; Han, Wei

In this paper, we propose a scheme to enhance trapping of entanglement of two qubits in the environment of a photonic band gap material. Our entanglement trapping promotion scheme makes use of combined weak measurements and quantum measurement reversals. The optimal promotion of entanglement trapping can be acquired with a reasonable finite success probability by adjusting measurement strengths. - Highlights: • Propose a scheme to enhance entanglement trapping in photonic band gap material. • Weak measurement and its reversal are performed locally on individual qubits. • Obtain an optimal condition for maximizing the concurrence of entanglement trapping. • Entanglement suddenmore » death can be prevented by weak measurement in photonic band gap.« less

Theory of extrinsic and intrinsic heterojunctions in thermal equilibrium

NASA Technical Reports Server (NTRS)

Von Ross, O.

1980-01-01

A careful analysis of an abrupt heterojunction consisting of two distinct semiconductors either intrinsic or extrinsic is presented. The calculations apply to a one-dimensional, nondegenerate structure. Taking into account all appropriate boundary conditions, it is shown that the intrinsic Fermi level shows a discontinuity at the interface between the two materials which leads to a discontinuity of the valence band edge equal to the difference in the band gap energies of the two materials. The conduction band edge stays continuous however. This result is independent of possible charged interface states and in sharp contrast to the Anderson model. The reasons for this discrepancy are discussed.

Influence of electronic band topology on phonon properties in Dirac materials

NASA Astrophysics Data System (ADS)

Garate, Ion; Saha, Kush; Légaré, Katherine

2015-03-01

In Dirac materials, the interaction between electrons and long-wavelength phonons has been shown to induce and stabilize topological insulation [1-2]. Here report on a theoretical study of the converse effect, namely the influence of band topology on phonon properties. We calculate how electron-phonon interactions change the bulk phonon dispersion as a function of pressure and temperature, in both trivial and topological phases. We find that (i) topological insulators are more prone to lattice instabilities than trivial insulators, and (ii) Raman and neutron scattering measurements can be used to determine the electronic band topology. Research funded by Canada's NSERC and Québec's RQMP.

Revivals of electron currents and topological-band insulator transitions in 2D gapped Dirac materials

NASA Astrophysics Data System (ADS)

Romera, E.; Bolívar, J. C.; Roldán, J. B.; de los Santos, F.

2016-07-01

We have studied the time evolution of electron wave packets in silicene under perpendicular magnetic and electric fields to characterize topological-band insulator transitions. We have found that at the charge neutrality points, the periodicities exhibited by the wave packet dynamics (classical and revival times) reach maximum values, and that the electron currents reflect the transition from a topological insulator to a band insulator. This provides a signature of topological phase transition in silicene that can be extended to other 2D Dirac materials isostructural to graphene and with a buckled structure and a significant spin-orbit coupling.

Electron counting and a large family of two-dimensional semiconductors

NASA Astrophysics Data System (ADS)

Miao, Maosheng; Botana, Jorge; Zurek, Eva; Liu, Jingyao; Yang, Wen

Two-dimensional semiconductors (2DSC) are currently the focus of many studies, thanks to their novel and superior transport properties that may greatly influence future electronic devices. The potential applications of 2DSCs range from low-dimensional electronics, topological insulators and vallytronics all the way to novel photolysis. However, compared with the conventional semiconductors that are comprised of main group elements and cover a large range of band gaps and lattice constants, the choice of 2D materials is very limited. In this work, we propose and demonstrate a large family of 2DSCs, all adopting the same structure and consisting of only main group elements. Using advanced density functional calculations, we demonstrate the attainability of these materials, and show that they cover a large range of lattice constants, band gaps and band edge states, making them good candidate materials for heterojunctions. This family of two dimensional materials may be instrumental in the fabrication of 2DSC devices that may rival the currently employed 3D semiconductors.

Electroless plated maghemite for three-dimensional magneto photonic crystals

NASA Astrophysics Data System (ADS)

Mito, Shinichiro; Kawashima, Takuya; Kawaguchi, Takuma; Sasano, Junji; Takagi, Hiroyuki; Inoue, Mitsuteru

2017-05-01

Three-dimensional magneto photonic crystals (3D-MPCs) are promising material for manipulating light in 3D space. In this study, we fabricated 3D-MPC that is filling the air-gap of opal photonic crystal with magnetic material by electroless plating. The electroless plating is an attractive film-forming method which provides magnetic material films on various substrates in aqueous solution at 24-90 °C. As magnetic material for filling the air-gap, maghemite (γ-Fe2O3) film was plated in opal photonic crystal. The plated maghemite film showed a Faraday rotation of 0.6 deg./μm at 440 nm and significantly lower absorption than magnetite. The plated opal showed photonic band gap and magneto-optic response. Faraday rotation of the plated opal was enhanced at the band edge. The photonic band gap and the Faraday rotation spectra were changed as a function of incident angle of light. Electroless plating of maghemite could be promising technique for fabricating 3D-MPCs.

Ultrafast band-gap oscillations in iron pyrite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolb, B; Kolpak, AM

2013-12-20

With its combination of favorable band gap, high absorption coefficient, material abundance, and low cost, iron pyrite, FeS2, has received a great deal of attention over the past decades as a promising material for photovoltaic applications such as solar cells and photoelectrochemical cells. Devices made from pyrite, however, exhibit open circuit voltages significantly lower than predicted, and despite a recent resurgence of interest in the material, there currently exists no widely accepted explanation for this disappointing behavior. In this paper, we show that phonons, which have been largely overlooked in previous efforts, may play a significant role. Using fully self-consistentmore » GW calculations, we demonstrate that a phonon mode related to the oscillation of the sulfur-sulfur bond distance in the pyrite structure is strongly coupled to the energy of the conduction-band minimum, leading to an ultrafast (approximate to 100 fs) oscillation in the band gap. Depending on the coherency of the phonons, we predict that this effect can cause changes of up to +/- 0.3 eV relative to the accepted FeS2 band gap at room temperature. Harnessing this effect via temperature or irradiation with infrared light could open up numerous possibilities for novel devices such as ultrafast switches and adaptive solar absorbers.« less

Quantum effect on the energy levels of Eu2+ doped K2Ca2(SO4)3 nanoparticles.

PubMed

Salah, Numan; Habib, Sami S; Khan, Zishan H

2010-09-01

Quantum confinement effect on the energy levels of Eu(2+) doped K(2)Ca(2)(SO(4))(3) nanoparticles has been observed. The broad photoluminescence (PL) emission band of Eu(2+) doped K(2)Ca(2)(SO(4))(3) microcrystalline sample observed at ∼436 nm is found to split into two narrow well resolved bands, located at 422 and 445 nm in the nanostructure form of this material. This has been attributed to the reduction in the crystal field strength of the nanomaterials, which results in widening the energy band gap and splitting the broad 4f(6)5d energy level of Eu(2+). Energy band gap values of the micro and nanocrystalline K(2)Ca(2)(SO(4))(3) samples were also determined by measuring the UV-visible absorption spectra. These values are 3.34 and 3.44 eV for the micro and nanocrystalline samples, respectively. These remarkable results suggest that activators having wide emission bands might be subjected to weak crystal strength via nanostructure materials to modify their electronic transitions. This might prove a powerful technique for producing new-advanced materials for use in the fields of solid state lasers and optoelectronic devises.

Constructing Repairable Meta-Structures of Ultra-Broad-Band Electromagnetic Absorption from Three-Dimensional Printed Patterned Shells.

PubMed

Song, Wei-Li; Zhou, Zhili; Wang, Li-Chen; Cheng, Xiao-Dong; Chen, Mingji; He, Rujie; Chen, Haosen; Yang, Yazheng; Fang, Daining

2017-12-13

Ultra-broad-band electromagnetic absorption materials and structures are increasingly attractive for their critical role in competing with the advanced broad-band electromagnetic detection systems. Mechanically soft and weak wax-based materials composites are known to be insufficient to serve in practical electromagnetic absorption applications. To break through such barriers, here we developed an innovative strategy to enable the wax-based composites to be robust and repairable meta-structures by employing a three-dimensional (3D) printed polymeric patterned shell. Because of the integrated merits from both the dielectric loss wax-based composites and mechanically robust 3D printed shells, the as-fabricated meta-structures enable bear mechanical collision and compression, coupled with ultra-broad-band absorption (7-40 and 75-110 GHz, reflection loss  smaller than -10 dB) approaching state-of-the-art electromagnetic absorption materials. With the assistance of experiment and simulation methods, the design advantages and mechanism of employing such 3D printed shells for substantially promoting the electromagnetic absorption performance have been demonstrated. Therefore, such universal strategy that could be widely extended to other categories of wax-based composites highlights a smart stage on which high-performance practical multifunction meta-structures with ultra-broad-band electromagnetic absorption could be envisaged.

FY2011 Annual Progress Report for Propulsion Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davis, Patrick B.; Schutte, Carol L.; Gibbs, Jerry L.

Annual Progress Report for Propulsion Materials focusing on enabling and innovative materials technologies that are critical in improving the efficiency of advanced engines by providing enabling materials support for combustion, hybrid, and power electronics development.

Composite 3D-printed metastructures for low-frequency and broadband vibration absorption

NASA Astrophysics Data System (ADS)

Matlack, Kathryn H.; Bauhofer, Anton; Krödel, Sebastian; Palermo, Antonio; Daraio, Chiara

2016-07-01

Architected materials that control elastic wave propagation are essential in vibration mitigation and sound attenuation. Phononic crystals and acoustic metamaterials use band-gap engineering to forbid certain frequencies from propagating through a material. However, existing solutions are limited in the low-frequency regimes and in their bandwidth of operation because they require impractical sizes and masses. Here, we present a class of materials (labeled elastic metastructures) that supports the formation of wide and low-frequency band gaps, while simultaneously reducing their global mass. To achieve these properties, the metastructures combine local resonances with structural modes of a periodic architected lattice. Whereas the band gaps in these metastructures are induced by Bragg scattering mechanisms, their key feature is that the band-gap size and frequency range can be controlled and broadened through local resonances, which are linked to changes in the lattice geometry. We demonstrate these principles experimentally, using advanced additive manufacturing methods, and inform our designs using finite-element simulations. This design strategy has a broad range of applications, including control of structural vibrations, noise, and shock mitigation.

Assessment of satellite and aircraft multispectral scanner data for strip-mine monitoring

NASA Technical Reports Server (NTRS)

Spisz, E. W.; Dooley, J. T.

1980-01-01

The application of LANDSAT multispectral scanner data to describe the mining and reclamation changes of a hilltop surface coal mine in the rugged, mountainous area of eastern Kentucky is presented. Original single band satellite imagery, computer enhanced single band imagery, and computer classified imagery are presented for four different data sets in order to demonstrate the land cover changes that can be detected. Data obtained with an 11 band multispectral scanner on board a C-47 aircraft at an altitude of 3000 meters are also presented. Comparing the satellite data with color, infrared aerial photography, and ground survey data shows that significant changes in the disrupted area can be detected from LANDSAT band 5 satellite imagery for mines with more than 100 acres of disturbed area. However, band-ratio (bands 5/6) imagery provides greater contrast than single band imagery and can provide a qualitative level 1 classification of the land cover that may be useful for monitoring either the disturbed mining area or the revegetation progress. However, if a quantitative, accurate classification of the barren or revegetated classes is required, it is necessary to perform a detailed, four band computer classification of the data.

Exotic superconductivity with enhanced energy scales in materials with three band crossings

NASA Astrophysics Data System (ADS)

Lin, Yu-Ping; Nandkishore, Rahul M.

2018-04-01

Three band crossings can arise in three-dimensional quantum materials with certain space group symmetries. The low energy Hamiltonian supports spin one fermions and a flat band. We study the pairing problem in this setting. We write down a minimal BCS Hamiltonian and decompose it into spin-orbit coupled irreducible pairing channels. We then solve the resulting gap equations in channels with zero total angular momentum. We find that in the s-wave spin singlet channel (and also in an unusual d-wave `spin quintet' channel), superconductivity is enormously enhanced, with a possibility for the critical temperature to be linear in interaction strength. Meanwhile, in the p-wave spin triplet channel, the superconductivity exhibits features of conventional BCS theory due to the absence of flat band pairing. Three band crossings thus represent an exciting new platform for realizing exotic superconducting states with enhanced energy scales. We also discuss the effects of doping, nonzero temperature, and of retaining additional terms in the k .p expansion of the Hamiltonian.

Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Sha, Yi-Gao

1995-01-01

The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

Formation of Degenerate Band Gaps in Layered Systems

PubMed Central

Ignatov, Anton I.; Merzlikin, Alexander M.; Levy, Miguel; Vinogradov, Alexey P.

2012-01-01

In the review, peculiarities of spectra of one-dimensional photonic crystals made of anisotropic and/or magnetooptic materials are considered. The attention is focused on band gaps of a special type—the so called degenerate band gaps which are degenerate with respect to polarization. Mechanisms of formation and properties of these band gaps are analyzed. Peculiarities of spectra of photonic crystals that arise due to the linkage between band gaps are discussed. Particularly, it is shown that formation of a frozen mode is caused by linkage between Brillouin and degenerate band gaps. Also, existence of the optical Borrmann effect at the boundaries of degenerate band gaps and optical Tamm states at the frequencies of degenerate band gaps are analyzed. PMID:28817024

A Technique for Mapping Characteristic Lengths to Preserve Energy Dissipated via Strain Softening in a Multiscale Analysis

NASA Technical Reports Server (NTRS)

Pineda, Evan J.; Bednarcyk, Brett A.; Arnold, Steven M.

2014-01-01

It is often advantageous to account for the microstructure of the material directly using multiscale modeling. For computational tractability, an idealized repeating unit cell (RUC) is used to capture all of the pertinent features of the microstructure. Typically, the RUC is dimensionless and depends only on the relative volume fractions of the different phases in the material. This works well for non-linear and inelastic behavior exhibiting a positive-definite constitutive response. Although, once the material exhibits strain softening, or localization, a mesh objective failure theories, such as smeared fracture theories, nodal and element enrichment theories (XFEM), cohesive elements or virtual crack closure technique (VCCT), can be utilized at the microscale, but the dimensions of the RUC must then be defined. One major challenge in multiscale progressive damage modeling is relating the characteristic lengths across the scales in order to preserve the energy that is dissipated via localization at the microscale. If there is no effort to relate the size of the macroscale element to the microscale RUC, then the energy that is dissipated will remain mesh dependent at the macroscale, even if it is regularized at the microscale. Here, a technique for mapping characteristic lengths across the scales is proposed. The RUC will be modeled using the generalized method of cells (GMC) micromechanics theory, and local failure in the matrix constituent subcells will be modeled using the crack band theory. The subcell characteristic lengths used in the crack band calculations will be mapped to the macroscale finite element in order to regularize the local energy in a manner consistent with the global length scale. Examples will be provided with and without the regularization, and they will be compared to a baseline case where the size and shape of the element and RUC are coincident (ensuring energy is preserved across the scales).

Novel quad-band terahertz metamaterial absorber based on single pattern U-shaped resonator

NASA Astrophysics Data System (ADS)

Wang, Ben-Xin; Wang, Gui-Zhen

2017-03-01

A novel quad-band terahertz metamaterial absorber using four different modes of single pattern resonator is demonstrated. Four obvious frequencies with near-perfect absorption are realized. Near-field distributions of the four modes are provided to reveal the physical picture of the multiple-band absorption. Unlike most previous quad-band absorbers that typically require four or more patterns, the designed absorber has only one resonant structure, which is simpler than previous works. The presented quad-band absorber has potential applications in biological sensing, medical imaging, and material detection.

Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z 2 Topological Insulator

NASA Astrophysics Data System (ADS)

Deng, Hui-Xiong; Song, Zhi-Gang; Li, Shu-Shen; Wei, Su-Huai; Luo, Jun-Wei

2018-05-01

Topological phase transition in a single material usually refers to transitions between a trivial band insulator and a topological Dirac phase, but the transition may also occur between different classes of topological Dirac phases. However, it is a fundamental challenge to realize quantum transition between Z2 nontrivial topological insulator (TI) and topological crystalline insulator (TCI) in one material because Z2 TI and TCI are hardly both co-exist in a single material due to their contradictory requirement on the number of band inversions. The Z2 TIs must have an odd number of band inversions over all the time-reversal invariant momenta, whereas, the newly discovered TCIs, as a distinct class of the topological Dirac materials protected by the underlying crystalline symmetry, owns an even number of band inversions. Here, take PbSnTe2 alloy as an example, we show that at proper alloy composition the atomic-ordering is an effective way to tune the symmetry of the alloy so that we can electrically switch between TCI phase and Z2 TI phase when the alloy is ordered from a random phase into a stable CuPt phase. Our results suggest that atomic-ordering provides a new platform to switch between different topological phases.

The brittle-viscous-plastic evolution of shear bands in the South Armorican Shear Zone

NASA Astrophysics Data System (ADS)

Bukovská, Zita; Jeřábek, Petr; Morales, Luiz F. G.; Lexa, Ondrej; Milke, Ralf

2014-05-01

Shear bands are microscale shear zones that obliquely crosscut an existing anisotropy such as a foliation. The resulting S-C fabrics are characterized by angles lower than 45° and the C plane parallel to shear zone boundaries. The S-C fabrics typically occur in granitoids deformed at greenschist facies conditions in the vicinity of major shear zones. Despite their long recognition, mechanical reasons for localization of deformation into shear bands and their evolution is still poorly understood. In this work we focus on microscale characterization of the shear bands in the South Armorican Shear Zone, where the S-C fabrics were first recognized by Berthé et al. (1979). The initiation of shear bands in the right-lateral South Armorican Shear Zone is associated with the occurrence of microcracks crosscutting the recrystallized quartz aggregates that define the S fabric. In more advanced stages of shear band evolution, newly formed dominant K-feldspar, together with plagioclase, muscovite and chlorite occur in the microcracks, and the shear bands start to widen. K-feldspar replaces quartz by progressively bulging into the grain boundaries of recrystallized quartz grains, leading to disintegration of quartz aggregates and formation of fine-grained multiphase matrix mixture. The late stages of shear band development are marked by interconnection of fine-grained white mica into a band that crosscuts the original shear band matrix. In its extremity, the shear band widening may lead to the formation of ultramylonites. With the increasing proportion of shear band matrix from ~1% to ~12%, the angular relationship between S and C fabrics increases from ~30° to ~40°. The matrix phases within shear bands show differences in chemical composition related to distinct evolutionary stages of shear band formation. The chemical evolution is well documented in K-feldspar, where the albite component is highest in porphyroclasts within S fabric, lower in the newly formed grains within microcracks and nearly absent in matrix grains in the well developed C bands. The chemical variation between primary and secondary new-formed micas was clearly identified by the Mg-Ti-Na content. The microstructural analysis documents a progressive decrease in quartz grain size and increasing interconnectivity of K-feldspar and white mica towards more mature shear bands. The contact-frequency analysis demonstrates that the phase distribution in shear bands tends to evolve from quartz aggregate distribution via randomization to K-feldspar aggregate distribution. The boundary preferred orientation is absent in quartz-quartz contacts either inside of outside the C bands, while it changes from random to parallel to the C band for the K-feldspar and and K-feldspar-quartz boundaries. The lack of crystallographic preferred orientation of the individual phases in the mixed matrix of the C planes suggests a dominant diffusion-assisted grain boundary sliding deformation mechanism. In the later stages of shear band development, the deformation is accommodated by crystal plasticity of white mica in micaceous bands. The crystallographic and microstructural data thus indicate two important switches in deformation mechanisms, from (i) brittle to Newtonian viscous behavior in the initial stages of shear band evolution and from (ii) Newtonian viscous to power law in the later evolutionary stages. The evolution of shear bands in the South Armorican Shear Zone thus document the interplay between deformation mechanisms and chemical reactions in deformed granitoids.

Superconductivity between standard types: Multiband versus single-band materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vagov, A.; Shanenko, A. A.; Milošević, M. V.

In the nearest vicinity of the critical temperature, types I and II of conventional single-band superconductors interchange at the Ginzburg-Landau parameter κ = 1/√2. At lower temperatures this point unfolds into a narrow but finite interval of κ’s, shaping an intertype (transitional) domain in the (κ,T ) plane. In the present work, based on the extended Ginzburg-Landau formalism, we show that the same picture of the two standard types with the transitional domain in between applies also to multiband superconductors. However, the intertype domain notably widens in the presence of multiple bands and can become extremely large when the systemmore » has a significant disparity between the band parameters. It is concluded that many multiband superconductors, such as recently discovered borides and iron-based materials, can belong to the intertype regime.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kong, Lingping; Liu, Gang; Gong, Jue

The organic-inorganic hybrid lead trihalide perovskites have been emerging as the most attractive photovoltaic materials. As regulated by Shockley-Queisser theory, a formidable materials science challenge for improvement to the next level requires further band-gap narrowing for broader absorption in solar spectrum, while retaining or even synergistically prolonging the carrier lifetime, a critical factor responsible for attaining the near-band-gap photovoltage. Herein, by applying controllable hydrostatic pressure, we have achieved unprecedented simultaneous enhancement in both band-gap narrowing and carrier-lifetime prolongation (up to 70% to -100% increase) under mild pressures at -0.3 GPa. The pressure-induced modulation on pure hybrid perovskites without introducing anymore » adverse chemical or thermal effect clearly demonstrates the importance of band edges on the photon-electron interaction and maps a pioneering route toward a further increase in their photovoltaic performance.« less

Density Functional Theory and Beyond for Band-Gap Screening: Performance for Transition-Metal Oxides and Dichalcogenides.

PubMed

Li, Wenqing; Walther, Christian F J; Kuc, Agnieszka; Heine, Thomas

2013-07-09

The performance of a wide variety of commonly used density functionals, as well as two screened hybrid functionals (HSE06 and TB-mBJ), on predicting electronic structures of a large class of en vogue materials, such as metal oxides, chalcogenides, and nitrides, is discussed in terms of band gaps, band structures, and projected electronic densities of states. Contrary to GGA, hybrid functionals and GGA+U, both HSE06 and TB-mBJ are able to predict band gaps with an appreciable accuracy of 25% and thus allow the screening of various classes of transition-metal-based compounds, i.e., mixed or doped materials, at modest computational cost. The calculated electronic structures are largely unaffected by the choice of basis functions and software implementation, however, might be subject to the treatment of the core electrons.

Electronic structure of antifluorite Cu{sub 2}X (X = S, Se, Te) within the modified Becke-Johnson potential plus an on-site Coulomb U

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yubo; Wang, Youwei; Xi, Lili

The traditional photon absorbers Cu{sub 2−x}X (X = S, Se, and Te) have regained significant research attention in the search of earth-abundant photovoltaic materials. These moderate- and narrow-gap materials have also been shown to exhibit excellent thermoelectric properties recently. However, semimetallic band structures with inverted band orderings are predicted for antifluorite structure Cu{sub 2}X using density functional theory with the local density approximation or the generalized gradient approximation. We find that semiconducting band structures and normal band orderings can be obtained using the modified Becke-Johnson potential plus an on-site Coulomb U (the mBJ+U approach), which is consistent with our earliermore » finding for diamond-like Cu-based multinary semiconductors [Y. Zhang, J. Zhang, W. Gao, T. A. Abtew, Y. Wang, P. Zhang, and W. Zhang, J. Chem. Phys. 139, 184706 (2013)]. The trend of the chemical bonding of Cu{sub 2}X is analyzed, which shows that the positions of the valence band maximum and conduction band minimum are strongly affected by the inter-site pd and intra-site sp hybridizations, respectively. The calculated gaps of Cu{sub 2}S and Cu{sub 2}Se still seem to be underestimated compared with experimental results. We also discuss the effects of different structural phases and Cu disordering and deficiency on the bandgaps of these materials.« less

Convergence of electronic bands for high performance bulk thermoelectrics.

PubMed

Pei, Yanzhong; Shi, Xiaoya; LaLonde, Aaron; Wang, Heng; Chen, Lidong; Snyder, G Jeffrey

2011-05-05

Thermoelectric generators, which directly convert heat into electricity, have long been relegated to use in space-based or other niche applications, but are now being actively considered for a variety of practical waste heat recovery systems-such as the conversion of car exhaust heat into electricity. Although these devices can be very reliable and compact, the thermoelectric materials themselves are relatively inefficient: to facilitate widespread application, it will be desirable to identify or develop materials that have an intensive thermoelectric materials figure of merit, zT, above 1.5 (ref. 1). Many different concepts have been used in the search for new materials with high thermoelectric efficiency, such as the use of nanostructuring to reduce phonon thermal conductivity, which has led to the investigation of a variety of complex material systems. In this vein, it is well known that a high valley degeneracy (typically ≤6 for known thermoelectrics) in the electronic bands is conducive to high zT, and this in turn has stimulated attempts to engineer such degeneracy by adopting low-dimensional nanostructures. Here we demonstrate that it is possible to direct the convergence of many valleys in a bulk material by tuning the doping and composition. By this route, we achieve a convergence of at least 12 valleys in doped PbTe(1-x)Se(x) alloys, leading to an extraordinary zT value of 1.8 at about 850 kelvin. Band engineering to converge the valence (or conduction) bands to achieve high valley degeneracy should be a general strategy in the search for and improvement of bulk thermoelectric materials, because it simultaneously leads to a high Seebeck coefficient and high electrical conductivity. ©2011 Macmillan Publishers Limited. All rights reserved

Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

DOEpatents

Forrest, Stephen R.; Wei, Guodan

2010-07-06

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

Hydrocarbons on Saturns Satellites: Relationship to Interstellar Dust and the Solar Nebula

NASA Technical Reports Server (NTRS)

Cruikshank, D. P.

2012-01-01

To understand the origin and evolution of our Solar System, and the basic components that led to life on Earth, we study interstellar and planetary spectroscopic signatures. The possible relationship of organic material detected in carbonaceous meteorites, interplanetary dust particles (IDPs), comets and the interstellar medium have been the source of speculation over the years as the composition and processes that governed the early solar nebula have been explored to understand the extent to which primitive material survived or became processed. The Cassini VIMS has provided new data relevant to this problem. Three of Saturn's satellites, Phoebe, Iapetus, and Hyperion, are found to have aromatic and aliphatic hydrocarbons on their surfaces. The aromatic hydrocarbon signature (C-H stretching mode at 3.28 micrometers) is proportionally significantly stronger (relative to the aliphatic bands) than that seen in other Solar System bodies (e.g., comets) and materials (Stardust samples, IDPs, meteorites) and the distinctive sub-features of the 3.4 micrometer aliphatic band (CH2 and CH3 groups) are reminiscent of those widely detected throughout the diffuse ISM. Phoebe may be a captured object that originated in the region beyond the present orbit of Neptune, where the solar nebula contained a large fraction of original interstellar ice and dust that was less processed than material closer to the Sun. Debris from Phoebe now resident on Iapetus and Hyperion, as well as o Phoebe itself, thus presents a unique blend of hydrocarbons, amenable to comparisons with interstellar hydrocarbons and other Solar System materials. The dust ring surrounding Saturn, in which Phoebe is embedded, probably originated from a collision with Phoebe. Dust ring particles are the likely source of the organic-bearing materials, and perhaps the recently identified small particles of Fe detected on Saturn's satellites. Lab measurements of the absolute band strengths of representative aliphatic and aromatic molecules, together with measurements from the VIMS data, allow us to calculate the number of C atoms to find the relative abundances of C atoms in the two kinds of organic molecules. The strength of the prominent aromatic C-H stretch band relative to the aliphatic band complex in Phoebe and Iapetus indicates that the relative abundance of aromatic to aliphatic carbon is very large (greater than 200). In contract, the aromatic band is nearly imperceptible in spectra of interplanetary dust particles (IDP), returned samples from comet 91P/Wild 2, insoluable carbonaceous material in most meteorites, and the diffuse interstellar dust (DISM) (although aromatics are known in all these materials-here we consider only the spectroscopic signature)

Wave propagation in ordered, disordered, and nonlinear photonic band gap materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lidorikis, Elefterios

Photonic band gap materials are artificial dielectric structures that give the promise of molding and controlling the flow of optical light the same way semiconductors mold and control the electric current flow. In this dissertation the author studied two areas of photonic band gap materials. The first area is focused on the properties of one-dimensional PBG materials doped with Kerr-type nonlinear material, while, the second area is focused on the mechanisms responsible for the gap formation as well as other properties of two-dimensional PBG materials. He first studied, in Chapter 2, the general adequacy of an approximate structure model inmore » which the nonlinearity is assumed to be concentrated in equally-spaced very thin layers, or 6-functions, while the rest of the space is linear. This model had been used before, but its range of validity and the physical reasons for its limitations were not quite clear yet. He performed an extensive examination of many aspects of the model's nonlinear response and comparison against more realistic models with finite-width nonlinear layers, and found that the d-function model is quite adequate, capturing the essential features in the transmission characteristics. The author found one exception, coming from the deficiency of processing a rigid bottom band edge, i.e. the upper edge of the gaps is always independent of the refraction index contrast. This causes the model to miss-predict that there are no soliton solutions for a positive Kerr-coefficient, something known to be untrue.« less

A comparative study of carrier lifetimes in ESWIR and MWIR materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation)

NASA Astrophysics Data System (ADS)

Bellotti, Enrico; Wen, Hanqing; Dominici, Stefano; Glasmann, Andreu L.

2017-02-01

HgCdTe has been the material of choice for MWIR, and LWIR infrared sensing due to its highly tunable band gap and favorable material properties. However, HgCdTe growth and processing for the ESWIR spectral region is less developed, so alternative materials are actively researched. It is important to compare the fundamental limitations of each material to determine which offers optimal device performance. In this article, we investigate the intrinsic recombination mechanisms of ESWIR materials—InGaAs, GeSn, and HgCdTe—with cutoff wavelength near 2.5μm, and MWIR with cutoff of 5μm. First, using an empirical pseudo-potential model, we calculate the full band structure of each alloy using the virtual crystal approximation, modified to include disorder effects and spin-orbit coupling. We then evaluate the Auger and radiative recombination rates using a Green's function based model, applied to the full material band structure, yielding intrinsic carrier lifetimes for each given temperature, carrier injection, doping density, and cutoff wavelength. For example, we show that ESWIR HgCdTe has longer carrier lifetimes than InGaAs when strained or relaxed near room temperature, which is advantageous for high operating temperature photodetectors. We perform similar analyses for varying composition GeSn by comparing the calculated lifetimes with InGaAs and HgCdTe. Finally, we compare HgCdTe, InAsSb and GeSn with a cutoff in the MWIR spectral band.

Development of the ECOSAR P-Band Synthetic Aperture Radar

NASA Technical Reports Server (NTRS)

Rincon, R. F.; Fatoyinbo, T.; Ranson, K. J.; Sun, G.; Deshpande, M.; Hale, R. D.; Bhat, A.; Perrine, M.; DuToit, C. F.; Bonds, Q.;

Gas-phase broadband spectroscopy using active sources: progress, status, and applications

PubMed Central

Cossel, Kevin C.; Waxman, Eleanor M.; Finneran, Ian A.; Blake, Geoffrey A.; Ye, Jun; Newbury, Nathan R.

2017-01-01

Broadband spectroscopy is an invaluable tool for measuring multiple gas-phase species simultaneously. In this work we review basic techniques, implementations, and current applications for broadband spectroscopy. We discuss components of broad-band spectroscopy including light sources, absorption cells, and detection methods and then discuss specific combinations of these components in commonly-used techniques. We finish this review by discussing potential future advances in techniques and applications of broad-band spectroscopy. PMID:28630530

Effects of bisoprolol and losartan treatment in the hypertrophic and failing right heart.

PubMed

Andersen, Stine; Schultz, Jacob Gammelgaard; Andersen, Asger; Ringgaard, Steffen; Nielsen, Jan M; Holmboe, Sarah; Vildbrad, Mads D; de Man, Frances S; Bogaard, Harm J; Vonk-Noordegraaf, Anton; Nielsen-Kudsk, Jens Erik

2014-11-01

Sympathetic adrenergic stimulation and the renin-angiotensin-aldosterone system are highly elevated in right heart failure. We evaluated if treatment with the adrenergic receptor blocker bisoprolol or the angiotensin II receptor blocker losartan could prevent the progression of right ventricular (RV) hypertrophy and failure in rats after pulmonary trunk banding (PTB). Male Wistar rats were randomized to severe PTB with a 0.5-mm banding clip (PTB0.5, n = 29), moderate PTB with a 0.6-mm banding clip (PTB0.6, n = 28), or sham operation (SHAM, n = 13). The PTB0.5 and PTB0.6 rats were randomized to 6 weeks of 10 mg/kg/d bisoprolol treatment, 20 mg/kg/d losartan treatment, or vehicle treatment. The PTB caused hypertrophy, dilation, and reduced function of the RV in all rats subjected to the procedure. Rats subjected to the more severe banding developed decompensated RV failure with extracardiac manifestations. Treatment with bisoprolol slowed the heart rate, and treatment with losartan lowered mean arterial pressure, confirming adequate dosing, but none of the treatments improved RV function or arrested the progression of RV hypertrophy and failure compared with vehicle. In our PTB model of pressure overload-induced RV hypertrophy and failure, treatment with bisoprolol and losartan did not demonstrate any beneficial effects in compensated or decompensated RV failure. Copyright © 2014 Elsevier Inc. All rights reserved.

High-resolution spectrum of the second member in the ( πu3 p) 4 ( πg3 p) ( πunp) Rydberg series of 32S 2

NASA Astrophysics Data System (ADS)

Ramanamma Chaudhri, Y. V.; Mahajan, C. G.

1991-02-01

High-resolution spectra of S 2 in the region of the E and F- X progressions have been used to carry out the rotational analyses of the bands at 65 869, 66 666, 65 978, 66 380, and 67 094 cm -1. The first two bands form a single progression and have been attributed to the transition E1 u( {1}/{2}, {1}/{2}) ← X0 g+. The bands at 65 978 and 66 380 cm -1 are shown to belong to the electronic transitions E'0 u+( {1}/{2}, {1}/{2}) ← X0 g+ and F1 u( {3}/{2}, {1}/{2}) ← X0 g+, respectively. The group of states E, E', and F constitutes the second member ( n = 5) of the Rydberg series ( πu3 p) 4 ( πu3 p) ( πunp) whose first member ( n = 4) is the state 3Σ u-. The band at 67 094 cm -1 has been assigned to the transition D'1 u ← X0 g+ which, when considered in the light of the state D3Π u, seems to form a second member of the Rydberg series ( πu3 p) 4 ( πg3 p) ( σunp). The vibrational and rotational constants of these electronic states have also been derived.

Determination of season at death using dental cementum increment analysis.

PubMed

Wedel, Vicki L

2007-11-01

Dental cementum anchors teeth into their sockets via the periodontal ligament. In mammals, dental cementum is laid down in alternating opaque and translucent bands representing winter (dormant) and summer (growth) seasons. Each pair of bands represents 1 year of life. Estimates of age at death based on counting pairs of bands are highly accurate. If the timing of the transition between winter and summer bands could be identified in humans, dental cementum increment analysis could be used to specify the season at death. This pilot project attempts to determine when these transitions occur and thus provide forensic anthropologists with a technique that would refine our estimates of postmortem interval. Extracted teeth were obtained from a local oral surgeon, embedded, sectioned, ground, polished, and examined under transmitted polarized light. The outermost increment was identified and measured along with other randomly chosen like bands. A transition from translucent to opaque bands was observed in teeth extracted in early October, while teeth extracted in early April exhibited nascent translucent bands. Further, significant correlations were observed between band thickness and number of days into either season, suggesting that band width increases as either season progresses. In this blind study, extracted teeth were effectively sorted into the spring/summer or fall/winter season 99% of the time.

First Principles Study of Band Structure and Band Gap Engineering in Graphene for Device Applications

DTIC Science & Technology

2015-03-20

In the bandstructure of graphene which is dominated by Dirac description, valence and conduction bands cross the Fermi level at a single point (K...of energy bands and appearance of Dirac cones near the ‘K’ point and Fermi level the electrons behave like massless Dirac fermions. For applications...results. Introduction Graphene, the super carbon , is now accepted as wonder material with new physics and it has caused major

Strain gradient drives shear banding in metallic glasses

NASA Astrophysics Data System (ADS)

Tian, Zhi-Li; Wang, Yun-Jiang; Chen, Yan; Dai, Lan-Hong

2017-09-01

Shear banding is a nucleation-controlled process in metallic glasses (MGs) involving multiple temporal-spatial scales, which hinders a concrete understanding of its structural origin down to the atomic scale. Here, inspired by the morphology of composite materials, we propose a different perspective of MGs as a hard particle-reinforced material based on atomic-scale structural heterogeneity. The local stable structures indicated by a high level of local fivefold symmetry (L5FS) act as hard "particles" which are embedded in the relatively soft matrix. We demonstrate this concept by performing atomistic simulations of shear banding in CuZr MG. A shear band is prone to form in a sample with a high degree of L5FS which is slowly quenched from the liquid. An atomic-scale analysis on strain and the structural evolution reveals that it is the strain gradient effect that has originated from structural heterogeneity that facilitates shear transformation zones (STZs) to mature shear bands. An artificial composite model with a high degree of strain gradient, generated by inserting hard MG strips into a soft MG matrix, demonstrates a great propensity for shear banding. It therefore confirms the critical role strain gradient plays in shear banding. The strain gradient effect on shear banding is further quantified with a continuum model and a mechanical instability analysis. These physical insights might highlight the strain gradient as the hidden driving force in transforming STZs into shear bands in MGs.

Phononic Band Gaps in 2D Quadratic and 3D Cubic Cellular Structures

PubMed Central

Warmuth, Franziska; Körner, Carolin

2015-01-01

The static and dynamic mechanical behaviour of cellular materials can be designed by the architecture of the underlying unit cell. In this paper, the phononic band structure of 2D and 3D cellular structures is investigated. It is shown how the geometry of the unit cell influences the band structure and eventually leads to full band gaps. The mechanism leading to full band gaps is elucidated. Based on this knowledge, a 3D cellular structure with a broad full band gap is identified. Furthermore, the dependence of the width of the gap on the geometry parameters of the unit cell is presented. PMID:28793713

Partially filled intermediate band of Cr-doped GaN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sonoda, S.

2012-05-14

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Phononic Band Gaps in 2D Quadratic and 3D Cubic Cellular Structures.

PubMed

Warmuth, Franziska; Körner, Carolin

2015-12-02

The static and dynamic mechanical behaviour of cellular materials can be designed by the architecture of the underlying unit cell. In this paper, the phononic band structure of 2D and 3D cellular structures is investigated. It is shown how the geometry of the unit cell influences the band structure and eventually leads to full band gaps. The mechanism leading to full band gaps is elucidated. Based on this knowledge, a 3D cellular structure with a broad full band gap is identified. Furthermore, the dependence of the width of the gap on the geometry parameters of the unit cell is presented.

Series-Coupled Pairs of Silica Microresonators

NASA Technical Reports Server (NTRS)

Savchenkov, Anatoliy; Iltchenko, Vladimir; Maleki, Lute; Handley, Tim

2009-01-01

Series-coupled pairs of whispering-gallery-mode optical microresonators have been demonstrated as prototypes of stable, narrow-band-pass photonic filters. Characteristics that are generally considered desirable in a photonic or other narrow-band-pass filter include response as nearly flat as possible across the pass band, sharp roll-off, and high rejection of signals outside the pass band. A single microresonator exhibits a Lorentzian filter function: its peak response cannot be made flatter and its roll-off cannot be made sharper. However, as a matter of basic principle applicable to resonators in general, it is possible to (1) use multiple resonators, operating in series or parallel, to obtain a roll-off sharper, and out-of-band rejection greater, relative to those of a Lorentzian filter function and (2) to make the peak response (the response within the pass band) flatter by tuning the resonators to slightly different resonance frequencies that span the pass band. The first of the two microresonators in each series-coupled pair was a microtorus made of germania-doped silica (containing about 19 mole percent germania), which is a material used for the cores of some optical fibers. The reasons for choosing this material is that exposing it to ultraviolet light causes it to undergo a chemical change that changes its index of refraction and thereby changes the resonance frequency. Hence, this material affords the means to effect the desired slight relative detuning of the two resonators. The second microresonator in each pair was a microsphere of pure silica. The advantage of making one of the resonators a torus instead of a sphere is that its spectrum of whispering-gallery-mode resonances is sparser, as needed to obtain a frequency separation of at least 100 GHz between resonances of the filter as a whole.

Electrical design of InAs-Sb/GaSb superlattices for optical detectors using full bandstructure sp3s* tight-binding method and Bloch boundary conditions

NASA Astrophysics Data System (ADS)

Mir, Raja N.; Frensley, William R.

2013-10-01

InAs-Sb/GaSb type-II strain compensated superlattices (SLS) are currently being used in mid-wave and long-wave infrared photodetectors. The electronic bandstructure of InSb and GaSb shows very strong anisotropy and non-parabolicity close to the Γ-point for the conduction band (CB) minimum and the valence band (VB) maximum. Particularly around the energy range of 45-80 meV from band-edge we observe strong non-parabolicity in the CB and light hole VB. The band-edge dispersion determines the electrical properties of a material. When the bulk materials are combined to form a superlattice we need a model of bandstructure which takes into account the full bandstructure details of the constituents and also the strong interaction between the conduction band of InAs and valence bands of GaSb. There can also be contact potentials near the interface between two dissimilar superlattices which will not be captured unless a full bandstructure calculation is done. In this study, we have done a calculation using second nearest neighbor tight binding model in order to accurately reproduce the effective masses. The calculation of mini-band structure is done by finding the wavefunctions within one SL period subject to Bloch boundary conditions ψ(L)=ψ(0)eikL. We demonstrate in this paper how a calculation of carrier concentration as a function of the position of the Fermi level (EF) within bandgap(Eg) should be done in order to take into account the full bandstructure of broken-bandgap material systems. This calculation is key for determining electron transport particularly when we have an interface between two dissimilar superlattices.

Review of an assortment of IR materials-devices technologies used for imaging in spectral bands ranging from the visible to very long wavelengths

NASA Astrophysics Data System (ADS)

DeWames, Roger E.

2016-05-01

In this paper we review the intrinsic and extrinsic technological properties of the incumbent technology, InP/In0.53Ga0.47As/InP, for imaging in the visible- short wavelength spectral band, InSb and HgCdTe for imaging in the mid-wavelength spectral band and HgCdTe for imaging in the long wavelength spectral band. These material systems are in use for a wide range of applications addressing compelling needs in night vision imaging, low light level astronomical applications and defense strategic satellite sensing. These materials systems are direct band gap energy semiconductors hence the internal quantum efficiency η, is near unity over a wide spectral band pass. A key system figure of merit of a shot noise limited detector technology is given by the equation (1+Jdark. /Jphoton), where Jdark is the dark current density and Jphoton ~qηΦ is the photocurrent density; Φ is the photon flux incident on the detector and q is the electronic charge. The capability to maintain this factor for a specific spectral band close to unity for low illumination conditions and low temperature onset of non-ideal dark current components, basically intrinsic diffusion limited performance all the way, is a marker of quality and versatility of a semiconductor detector technology. It also enables the highest temperature of operation for tactical illumination conditions. A purpose of the work reported in this paper is to explore the focal plane array data sets of photodiode detector technologies widely used to bench mark their fundamental and technology properties and identify paths for improvements.

40 CFR 211.210-2 - Labeling requirements.

Code of Federal Regulations, 2010 CFR

2010-07-01

... constant); (ii) Ear cup volume or shape; (iii) Mounting of ear cup on head band; (iv) Ear cushion; (v... tension (spring constant); (ii) Mounting of plug on head band; (iii) Shape of plug; (iv) Material...

Control of valence and conduction band energies in layered transition metal phosphates via surface functionalization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lentz, Levi C.; Kolb, Brian; Kolpak, Alexie M.

Layered transition metal phosphates and phosphites (TMPs) are a class of 2D materials bound togetherviavan der Waals interactions. Through simple functionalization, band energies can be systematically controlled.

Interband coupling and transport interband scattering in s ± superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kogan, Vladimir; Prozorov, Ruslan

A two-band model with repulsive interband coupling and interband transport (potential) scattering is considered to elucidate their effects on material properties. In agreement with previous work, we find that the bands order parameters Δ 1,2 differ and the large is at the band with a smaller normal density of states (DOS), N n2 < N n1. However, the bands energy gaps, as determined by the energy dependence of the DOS, are equal due to scattering. For each temperature, the gaps turn zero at a certain critical interband scattering rate, i.e. for strong enough scattering the model material becomes gappless. Inmore » the gapless state, the DOS at the band 2 is close to the normal state value, whereas at the band 1 it has a V-shape with non-zero minimum. When the normal bands DOS' are mismatched, N n1 6= N n2, the critical temperature T c is suppressed even in the absence of interband scattering, T c(N n1) has a dome-like shape. With increasing interband scattering, the London penetration depth at low temperatures evolves from being exponentially at to the powerlaw and even to near linear behavior in the gapless state, the latter being easily misinterpreted as caused by order parameter nodes.« less

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

2001-01-01

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

Realization of non-symmorphic Dirac cones in PbFCl materials

NASA Astrophysics Data System (ADS)

Schoop, Leslie

While most 3D Dirac semimetals require two bands with different orbital character to be protected, there is also the possibility to find 3D Dirac semimetals that are guaranteed to exist in certain space groups. Those are resulting from the non-symmoprhic symmetry of the space group, which forces the bands to degenerate at high symmetry points in the Brillouin zone. Non-symmorphic space groups can force three- four, six and eight fold degeneracies which led to the proposal to find 3D Dirac Semimetals as well as new quasiparticles in such space groups. Problematic for realizing this types of Dirac materials is that they require and odd band filling in order to have the Fermi level located at or also near by the band crossing points. Therefore, although the first prediction for using non-symmoprhic symmetry to create a Dirac material was made in 2012, it took almost four years for an experimental verification of this type of Dirac crossing. In this talk I will introduce the material ZrSiS that has, besides other Dirac features, a Dirac cone protected by non-symmorphic symmetry at about 0.5 eV below the Fermi level and was the first material where this type of Dirac cone was imaged with ARPES. I will then proceed to discuss ways to shift this crossing to the Fermi edge and finally show an experimental verification of a fourfold Dirac crossing, protected by non-symmorphic symmetry, at the Fermi energy.

Analogs of solid nanoparticles as precursors of aromatic hydrocarbons

NASA Astrophysics Data System (ADS)

Gadallah, K. A. K.; Mutschke, H.; Jäger, C.

2013-06-01

Context. Aromatic =CH and C=C vibrational bands have been observed within shocked interstellar regions, indicating the presence of aromatic emission carriers such as PAHs, which may have been created from adjacent molecular cloud material by interaction with a shock front. Aims: We investigate the evolution of the aromatic =CH and C=C vibrational modes at 3.3 and 6.2 μm wavelength in heated HAC materials, PAHs and mixed PAHs and HACs, respectively, aiming at an explanation of the evolution of carbonaceous dust grains in the shocked regions. Methods: Materials used in these analogs (HAC and PAH materials) were prepared by the laser ablation and the laser pyrolysis methods, respectively. The transmission electron microscopy (TEM) in high-resolution mode was used as an analytical technique to characterize the aromatic layers in HACs. Spectroscopic analysis was prformed in the mid-IR range. Results: A remarkable destruction of aliphatic structures in HACs has been observed with the thermal processing, while aromatic structures become dominating by increasing the diameters of the graphene layers. The aromatic bands at 3.3 and 6.2 μm, observed in the laboratory spectra of PAHs and of the combination of the PAHs and HAC materials, are also clearly observed in the spectrum of the heated HACs. These bands agree with those of aromatic bands observed in astronomical observations. Conclusions: Aromatization of HACs could be a pre-stage in the decomposition process of hydrocarbons that form PAH-clusters in such hot interstellar medium.

A study of the role of fillers in silicone rubber compounds for outdoor insulation

NASA Astrophysics Data System (ADS)

Meyer, Luiz Henrique

Polymeric materials are being used as a housing material on high voltage outdoor insulation as an alternative to porcelain or glass in line insulators, surge arresters, station posts, and bushings. Among the polymeric materials in use, silicone rubber has proven to have good aging performance under polluted conditions by keeping low levels of leakage current by virtue of its hydrophobicity. However, the exposure of polymeric materials to contaminated and humid environments can lead to certain surface conditions that reduces hydrophobicity increasing leakage current levels, giving rise to dry band arcing. Dry band arcing produces heat, which can result in tracking or erosion of the housing material. Although this dry band arcing does not harm porcelain or glass housings, it will erode pure silicone rubber to such an extent that its application in outdoor environments is not, practical. Fillers are added to silicone rubber to improve tracking and erosion resistance. Among the filler choices, alumina trihydrate (ATH) and silica have been extensively adopted in the compounding of polymeric housings. ATH is a flame retardant that has a molecular water in its formulation. Whenever the surface temperature of an ATH filled polymer reaches approximately 220°C, the water of hydration is released from the ATH molecule, what is recognized as an efficient way to cool down the surface, for example, in the case of dry band arcing. Alternatively, silica has very good bonding with the polymer backbone, imparting mechanical strength to the composite matrix. In addition, fillers such as ATH or silica increase the thermal conductivity of silicone rubber composites, which facilitates moving the heat away from its source, that is, from the origin of dry band arcing. Although heat is considered to be the main degradation factor when dry band arcing occurs, very little information is available on the thermal performance of filled silicone rubber. The standard methods available to test tracking and erosion resistance of filled silicone rubber do not allow to delineate the fundamentals of the thermal degradation, where the heat from the dry band arcing is the main degradation factor. In this work, a thermal imaging camera is used to investigate the thermal performance of filled silicone rubber in an inclined plane test. Infrared laser based techniques are developed to study the material performance. Furthermore, this thesis addresses the measurement of the thermal conductivity, based on infrared laser and thermal imaging, but using simple concepts. Theoretical and empirical models are developed in support of the experimental investigation.

Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

PubMed Central

Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

2009-01-01

Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

Atomic and electronic structure of Mo6S9-xIx nanowires

NASA Astrophysics Data System (ADS)

Meden, A.; Kodre, A.; Padeznik Gomilsek, J.; Arcon, I.; Vilfan, I.; Vrbanic, D.; Mrzel, A.; Mihailovic, D.

2005-09-01

Moybdenum-based subnanometre diameter nanowires are easy to synthesize and disperse, and they exhibit a variety of functional properties in which they are superior to other one-dimensional materials. However, further progress in the understanding of physical properties and the development of new and specific applications have so far been impeded by the fact that their structure was not accurately known. Here we report on a combination of systematic x-ray diffraction and extended x-ray absorption fine structure experiments, and first-principles theoretical structure calculations, which are used to determine the atomic skeletal structure of individual Mo6S9-xIx (MoSIx) nanowires, their packing arrangement within bundles and their electronic band structure. From this work we conclude that the variations in functional properties appear to arise from different stoichiometry, not skeletal structure. A supplementary data file is available from http://stacks.iop.org/0957-4484/16/1578

New developments in laser-based photoemission spectroscopy and its scientific applications: a key issues review

NASA Astrophysics Data System (ADS)

Zhou, Xingjiang; He, Shaolong; Liu, Guodong; Zhao, Lin; Yu, Li; Zhang, Wentao

2018-06-01

The significant progress in angle-resolved photoemission spectroscopy (ARPES) in last three decades has elevated it from a traditional band mapping tool to a precise probe of many-body interactions and dynamics of quasiparticles in complex quantum systems. The recent developments of deep ultraviolet (DUV, including ultraviolet and vacuum ultraviolet) laser-based ARPES have further pushed this technique to a new level. In this paper, we review some latest developments in DUV laser-based photoemission systems, including the super-high energy and momentum resolution ARPES, the spin-resolved ARPES, the time-of-flight ARPES, and the time-resolved ARPES. We also highlight some scientific applications in the study of electronic structure in unconventional superconductors and topological materials using these state-of-the-art DUV laser-based ARPES. Finally we provide our perspectives on the future directions in the development of laser-based photoemission systems.

Recent Progress In Optical Oxygen Sensing

NASA Astrophysics Data System (ADS)

Wolfbeis, Otto S.; Leiner, Marc J. P.

1988-06-01

Following a brief review on the history of optical oxygen sensing (which shows that a variety of ideas exists in the literature that awaits the extension to fiber optic sensing schemes), the present state of probing oxygen by optical methods is discussed in terms of new methods and materials for sensor construction. Promising sensing schemes include simultaneous measurement of parameters such as oxygen and carbon dioxide with one fiber, measurement of fluorescence lifetimes and radiative energy transfer efficiency as well as phosphorescence quenching. New longwave-excitable fluorophores have been introduced recently, two-band emit-ting indicators can help to eliminate drift problems, and new methods have been found by which both indicators and enzymes may be entrapped in silicone rubber, which opens the way for the design of new biosensors. In a final chapter, the application of fiber optic oxygen sensors for blood gas measurement and as transducers in biosensors are presented.

Efficient Meshfree Large Deformation Simulation of Rainfall Induced Soil Slope Failure

NASA Astrophysics Data System (ADS)

Wang, Dongdong; Li, Ling

2010-05-01

An efficient Lagrangian Galerkin meshfree framework is presented for large deformation simulation of rainfall-induced soil slope failure. Detailed coupled soil-rainfall seepage equations are given for the proposed formulation. This nonlinear meshfree formulation is featured by the Lagrangian stabilized conforming nodal integration method where the low cost nature of nodal integration approach is kept and at the same time the numerical stability is maintained. The initiation and evolution of progressive failure in the soil slope is modeled by the coupled constitutive equations of isotropic damage and Drucker-Prager pressure-dependent plasticity. The gradient smoothing in the stabilized conforming integration also serves as a non-local regularization of material instability and consequently the present method is capable of effectively capture the shear band failure. The efficacy of the present method is demonstrated by simulating the rainfall-induced failure of two typical soil slopes.

Synthesis and controlled release properties of 2,4-dichlorophenoxy acetate-zinc layered hydroxide nanohybrid

NASA Astrophysics Data System (ADS)

Bashi, Abbas M.; Hussein, Mohd Zobir; Zainal, Zulkarnain; Tichit, Didier

2013-07-01

Direct reaction of ZnO with 2,4-dichlorophenoxyacetic acid (24D) solutions of different concentrations allows obtaining new organic-inorganic nanohybrid materials formed by intercalation of 24D into interlayers of zinc layered hydroxide (ZLH). XRD patterns show a progressive evolution of the structure as 24D concentration increases. The nanohybrid obtained at higher 24D concentration (24D-ZLH(0.4)) reveals a well ordered layered structure with two different basal spacings at 25.2 Å and 24 Å. The FTIR spectrum showing the vibrations bands of the functional groups of 24D and of the ZLH confirms the intercalation. SEM images are in agreement with the structural evolution observed by XRD and reveal the ribbon morphology of the nanohybrids. The release studies of 24D showed a rapid release of 94% for the first 100 min governed by the pseudo-second order kinetic model.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Connatser, Raynella M; Prokes, Sharka M.; Glembocki, Orest

Exposure to light or heat, or simply a dearth of fingerprint material, renders some latent fingerprints undetectable using conventional methods. We begin to address such elusive fingerprints using detection targeting photo- and thermally stable fingerprint constituents: surface-enhanced Raman spectroscopy (SERS). SERS can give descriptive vibrational spectra of amino acids, among other robust fingerprint constituents, and good sensitivity can be attained by improving metal-dielectric nanoparticle substrates. With SERS chemical imaging, vibrational bands intensities recreate a visual of fingerprint topography. The impact of nanoparticle synthesis route, dispersal methodology-deposition solvent, and laser wavelength are discussed, as are data from enhanced vibrational spectra ofmore » fingerprint components. SERS and Raman chemical images of fingerprints and realistic contaminants are shown. To our knowledge, this represents the first SERS imaging of fingerprints. In conclusion, this work progresses toward the ultimate goal of vibrationally detecting latent prints that would otherwise remain undetected using traditional development methods.« less

Progress in advanced high temperature materials technology

NASA Technical Reports Server (NTRS)

Freche, J. C.; Ault, G. M.

1976-01-01

Significant progress has recently been made in many high temperature material categories pertinent to such applications by the industrial community. These include metal matrix composites, superalloys, directionally solidified eutectics, coatings, and ceramics. Each of these material categories is reviewed and the current state-of-the-art identified, including some assessment, when appropriate, of progress, problems, and future directions.

Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy.

PubMed

Jobst, Johannes; van der Torren, Alexander J H; Krasovskii, Eugene E; Balgley, Jesse; Dean, Cory R; Tromp, Rudolf M; van der Molen, Sense Jan

2016-11-29

High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the 'chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.

Importance of non-parabolic band effects in the thermoelectric properties of semiconductors

PubMed Central

Chen, Xin; Parker, David; Singh, David J.

2013-01-01

We present an analysis of the thermoelectric properties of of n-type GeTe and SnTe in relation to the lead chalcogenides PbTe and PbSe. We find that the singly degenerate conduction bands of semiconducting GeTe and SnTe are highly non-ellipsoidal, even very close to the band edges. This leads to isoenergy surfaces with a strongly corrugated shape that is clearly evident at carrier concentrations well below 0.005 e per formula unit (7–9 × 1019 cm−3 depending on material). Analysis within Boltzmann theory suggests that this corrugation may be favorable for the thermoelectric transport. Our calculations also indicate that values of the power factor for these two materials may well exceed those of PbTe and PbSe. As a result these materials may exhibit n-type performance exceeding that of the lead chalcogenides. PMID:24196778

Al{sub 4}SiC{sub 4} wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pedesseau, L., E-mail: laurent.pedesseau@insa-rennes.fr, E-mail: jacky.even@insa-rennes.fr; Even, J., E-mail: laurent.pedesseau@insa-rennes.fr, E-mail: jacky.even@insa-rennes.fr; Durand, O.

New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al{sub 4}SiC{sub 4}). A state of the art implementation of the density functional theory is used to analyze the experimental crystal structure, the Born charges, the elastic properties, and the piezoelectric properties. The Born charge tensor is correlated to the local bonding environment for each atom. The electronic band structure is computed including self-consistent many-body corrections. Al{sub 4}SiC{sub 4} material properties are compared to other wide band gap wurtzite materials. From a comparison between an ellipsometry study of the optical properties and theoretical results, we conclude thatmore » the Al{sub 4}SiC{sub 4} material has indirect and direct band gap energies of about 2.5 eV and 3.2 eV, respectively.« less

Thinking Like a Chemist: Intuition in Thermoelectric Materials.

PubMed

Zeier, Wolfgang G; Zevalkink, Alex; Gibbs, Zachary M; Hautier, Geoffroy; Kanatzidis, Mercouri G; Snyder, G Jeffrey

2016-06-06

The coupled transport properties required to create an efficient thermoelectric material necessitates a thorough understanding of the relationship between the chemistry and physics in a solid. We approach thermoelectric material design using the chemical intuition provided by molecular orbital diagrams, tight binding theory, and a classic understanding of bond strength. Concepts such as electronegativity, band width, orbital overlap, bond energy, and bond length are used to explain trends in electronic properties such as the magnitude and temperature dependence of band gap, carrier effective mass, and band degeneracy and convergence. The lattice thermal conductivity is discussed in relation to the crystal structure and bond strength, with emphasis on the importance of bond length. We provide an overview of how symmetry and bonding strength affect electron and phonon transport in solids, and how altering these properties may be used in strategies to improve thermoelectric performance. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dendrometer bands made easy: using modified cable ties to measure incremental growth of trees

USGS Publications Warehouse

Anemaet, Evelyn R.; Middleton, Beth A.

2013-01-01

Dendrometer bands are a useful way to make sequential repeated measurements of tree growth, but traditional dendrometer bands can be expensive, time consuming, and difficult to construct in the field. An alternative to the traditional method of band construction is to adapt commercially available materials. This paper describes how to construct and install dendrometer bands using smooth-edged, stainless steel, cable tie banding and attachable rollerball heads. As a performance comparison, both traditional and cable tie dendrometer bands were installed on baldcypress trees at the National Wetlands Research Center in Lafayette, Louisiana, by both an experienced and a novice worker. Band installation times were recorded, and growth of the trees as estimated by the two band types was measured after approximately one year, demonstrating equivalence of the two methods. This efficient approach to dendrometer band construction can help advance the knowledge of long-term tree growth in ecological studies.

Topological Insulators in Ternary Compounds with a Honeycomb Lattice

NASA Astrophysics Data System (ADS)

Zhang, Hai-Jun; Chadov, Stanislav; Müchler, Lukas; Yan, Binghai; Qi, Xiao-Liang; Kübler, Jürgen; Zhang, Shou-Cheng; Felser, Claudia

2011-04-01

We investigate a new class of ternary materials such as LiAuSe and KHgSb with a honeycomb structure in Au-Se and Hg-Sb layers. We demonstrate the band inversion in these materials similar to HgTe, which is a strong precondition for existence of the topological surface states. In contrast with graphene, these materials exhibit strong spin-orbit coupling and a small direct band gap at the Γ point. Since these materials are centrosymmetric, it is straightforward to determine the parity of their wave functions, and hence their topological character. Surprisingly, the compound with strong spin-orbit coupling (KHgSb) is trivial, whereas LiAuSe is found to be a topological insulator.

Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu2 BaSn(S,Se)4 Absorber.

PubMed

Shin, Donghyeop; Zhu, Tong; Huang, Xuan; Gunawan, Oki; Blum, Volker; Mitzi, David B

2017-06-01

In recent years, Cu 2 ZnSn(S,Se) 4 (CZTSSe) materials have enabled important progress in associated thin-film photovoltaic (PV) technology, while avoiding scarce and/or toxic metals; however, cationic disorder and associated band tailing fundamentally limit device performance. Cu 2 BaSnS 4 (CBTS) has recently been proposed as a prospective alternative large bandgap (~2 eV), environmentally friendly PV material, with ~2% power conversion efficiency (PCE) already demonstrated in corresponding devices. In this study, a two-step process (i.e., precursor sputter deposition followed by successive sulfurization/selenization) yields high-quality nominally pinhole-free films with large (>1 µm) grains of selenium-incorporated (x = 3) Cu 2 BaSnS 4- x Se x (CBTSSe) for high-efficiency PV devices. By incorporating Se in the sulfide film, absorber layers with 1.55 eV bandgap, ideal for single-junction PV, have been achieved within the CBTSSe trigonal structural family. The abrupt transition in quantum efficiency data for wavelengths above the absorption edge, coupled with a strong sharp photoluminescence feature, confirms the relative absence of band tailing in CBTSSe compared to CZTSSe. For the first time, by combining bandgap tuning with an air-annealing step, a CBTSSe-based PV device with 5.2% PCE (total area 0.425 cm 2 ) is reported, >2.5× better than the previous champion pure sulfide device. These results suggest substantial promise for the emerging Se-rich Cu 2 BaSnS 4- x Se x family for high-efficiency and earth-abundant PV. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Illuminating the Potential of Thin-Film Photovoltaics

NASA Astrophysics Data System (ADS)

Katahara, John K.

Widespread adoption of photovoltaics (PV) as an alternative electricity source will be predicated upon improvements in price performance compared to traditional power sources. Solution processing of thin-film PV is one promising way to reduce the capital expenditure (CAPEX) of manufacturing solar cells. However, it is imperative that a shift to solution processing does not come at the expense of device performance. One particularly problematic parameter for thin-film PV has historically been the open-circuit voltage (VOC ). As such, there is a pressing need for characterization tools that allow us to quickly and accurately evaluate the potential performance of solution-processed PV absorber layers. This work describes recent progress in developing photoluminescence (PL) techniques for probing optoelectronic quality in semiconductors. We present a generalized model of absorption that encompasses ideal direct-gap semiconductor absorption and various band tail models. This powerful absorption model is used to fit absolute intensity PL data and extract quasi-Fermi level splitting (maximum attainable VOC) for a variety of PV absorber technologies. This technique obviates the need for full device fabrication to get feedback on optoelectronic quality of PV absorber layers and has expedited materials exploration. We then use this absorption model to evaluate the thermodynamic losses due to different band tail cases and estimate tail losses in Cu 2ZnSn(S,Se)4 (CZTSSe). The effect of sub-bandgap absorption on PL quantum yield (PLQY) and voltage is elucidated, and new analysis techniques for extracting VOC from PLQY are validated that reduce computation time and provide us even faster feedback on material quality. We then use PL imaging to develop a mechanism describing the degradation of solution-processed CH3NH3PbI3 films under applied bias and illumination.

Boron nitride nanotubes for spintronics.

PubMed

Dhungana, Kamal B; Pati, Ranjit

2014-09-22

With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

Boron Nitride Nanotubes for Spintronics

PubMed Central

Dhungana, Kamal B.; Pati, Ranjit

2014-01-01

With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics. PMID:25248070

Millimeter-wave passive ultra-compact imaging technology for synthetic vision & mobile platforms

NASA Technical Reports Server (NTRS)

Olsen, Randall

1996-01-01

Substantial technical progress was made on all of the three high-risk subsystems of this program. The subsystems include dielectric antenna, G-band receiver, and electro-optic image processor. Progress is approximately on-schedule for both the receiver and the electro-optic processor development, while greater than anticipated challenges have been discovered in the dielectric antenna development. Much of the information in this report was covered in greater detail in the One-Year Review Meeting held at TTC on 22 February 1996. The performance goals of the dielectric antenna project are: Scan Angle -- 20 deg. desired; Loss -- 6 dB end to end (3 dB average); Frequency -- 206-218 GHz (6% bandwidth); Beam width -- 0.25 deg.; and Length -- 12 inches. The scan angle requirement was chosen to satisfy the needs of aircraft pilots. This requirement, coupled with the presently limited bandwidth processors (1 GHz state-of-the-art and 12 GHz in development in this program) forces the antenna to be dielectric (high scan angle air-filled waveguide-based antennas would be too lossy and their performance would vary too much as a function of frequency). A high dielectric constant (e.g., 10) was initially chosen for the dielectric material. This choice lead to the following fabrication challenges: total thickness variation (TTV) tolerance is 1 micrometer; coupler spacing tolerance is 1 micrometer; width tolerance is larger, but unknown, and the surfaces must have mirror finish. Also of importance is the difficulty in obtaining raw materials that satisfy the overall length requirement of 12 inches while simultaneously satisfying the above specifications.

Effect of permeable flow on cyclic layering in solidifying magma bodies: Insights from an analog experiment of diffusion-precipitation systems

NASA Astrophysics Data System (ADS)

Toramaru, A.; Yamauchi, S.

2012-04-01

Characteristic structures such as rhythmic layering, cress cumulate, cross bedding, perpendicular feldspar rock etc, are commonly observed in layered intrusion or shallow magmatic intrusions. These structures result from complex processes including thermal and compositional diffusions, crystallization, crystal settling, convection and interaction among three phases (crystals, bubble, melt). In order to understand how the differentiation proceeds in solidifying magma bodies from each characteristic structure together with chemical signatures, it is necessary to evaluate the relative importance among these elemental processes on structures. As an attempt to evaluate the effect of advection on a diffusion-related structure, we carried out an analog experiment of Liesegang system using lead-iodide (PbI2) crystallization in agar media which have been normally used to prohibit convection. In the ordinary Liesegang band formation experiments including only diffusion and crystallization kinetics without any advection and convection, the precipitation bands develop with regular spacing following a geometric progression due to two-component diffusion and reaction with supersaturation. This type of banding structure has been advocated as the same type of cyclic layering or vesicle layering (a sort of rhythmic layering) in dykes or sills. In order to see the effect of one-directional advection on Liesegang band, we apply the electric field (5 V to 25 V for a distance 15 cm) along the concentration gradient in agar media, thereby counteracting flows of lead anion Pb2+ and iodide ion I- are driven at constant velocities. The flows of anions and ions are equivalent to the permeable flows in porous media of crystal mush. The resultant precipitation structures exhibit very curious banding structure in which band spacings do not change with distance, are nearly constant and quite narrow, depending on the voltage, unlike those in ordinary Liesegang bands in which band spacings increase with distance following geometric progression. Further interestingly each band consists of a lot of very tiny irregular-shaped crystal aggregates. From experimental results and scaling arguments, with regard to the effect of one directional permeable flow on band spacing of cyclic layering, we propose a hypothesis of constant Peclet number that Peclet number (ratio of flow velocity to diffusive velocity) is nearly unity. By applying the hypothesis to natural examples, we can estimate a value of permeable flow velocity of interstitial melts in differentiating magma bodies from values of a band spacing and diffusivity data.

Object-based assessment of burn severity in diseased forests using high-spatial and high-spectral resolution MASTER airborne imagery

NASA Astrophysics Data System (ADS)

Chen, Gang; Metz, Margaret R.; Rizzo, David M.; Dillon, Whalen W.; Meentemeyer, Ross K.

2015-04-01

Forest ecosystems are subject to a variety of disturbances with increasing intensities and frequencies, which may permanently change the trajectories of forest recovery and disrupt the ecosystem services provided by trees. Fire and invasive species, especially exotic disease-causing pathogens and insects, are examples of disturbances that together could pose major threats to forest health. This study examines the impacts of fire and exotic disease (sudden oak death) on forests, with an emphasis on the assessment of post-fire burn severity in a forest where trees have experienced three stages of disease progression pre-fire: early-stage (trees retaining dried foliage and fine twigs), middle-stage (trees losing fine crown fuels), and late-stage (trees falling down). The research was conducted by applying Geographic Object-Based Image Analysis (GEOBIA) to MASTER airborne images that were acquired immediately following the fire for rapid assessment and contained both high-spatial (4 m) and high-spectral (50 bands) resolutions. Although GEOBIA has gradually become a standard tool for analyzing high-spatial resolution imagery, high-spectral resolution data (dozens to hundreds of bands) can dramatically reduce computation efficiency in the process of segmentation and object-based variable extraction, leading to complicated variable selection for succeeding modeling. Hence, we also assessed two widely used band reduction algorithms, PCA (principal component analysis) and MNF (minimum noise fraction), for the delineation of image objects and the subsequent performance of burn severity models using either PCA or MNF derived variables. To increase computation efficiency, only the top 5 PCA and MNF and top 10 PCA and MNF components were evaluated, which accounted for 10% and 20% of the total number of the original 50 spectral bands, respectively. Results show that if no band reduction was applied the models developed for the three stages of disease progression had relatively similar performance, where both spectral responses and texture contributed to burn assessments. However, the application of PCA and MNF introduced much greater variation among models across the three stages. For the early-stage disease progression, neither band reduction algorithms improved or retained the accuracy of burn severity modeling (except for the use of 10 MNF components). Compared to the no-band-reduction scenario, band reduction led to a greater level of overestimation of low-degree burns and underestimation of medium-degree burns, suggesting that the spectral variation removed by PCA and MNF was vital for distinguishing between the spectral reflectance from disease-induced dried crowns (still retaining high structural complexity) and fire ash. For the middle-stage, both algorithms improved the model R2 values by 2-37%, while the late-stage models had comparable or better performance to those using the original 50 spectral bands. This could be explained by the loss of tree crowns enabling better signal penetration, thus leading to reduced spectral variation from canopies. Hence, spectral bands containing a high degree of random noise were correctly removed by the band reduction algorithms. Compared to the middle-stage, the late-stage forest stands were covered by large piles of fallen trees and branches, resulting in higher variability of MASTER imagery. The ability of band reduction to improve the model performance for these late-stage forest stands was reduced, because the valuable spectral variation representing the actual late-stage forest status was partially removed by both algorithms as noise. Our results indicate that PCA and MNF are promising for balancing computation efficiency and the performance of burn severity models in forest stands subject to the middle and late stages of sudden oak death disease progression. Compared to PCA, MNF dramatically reduced image spectral variation, generating larger image objects with less complexity of object shapes. Whereas, PCA-based models delivered superior performance in most evaluated cases suggesting that some key spectral variability contributing to the accuracy of burn severity models in diseased forests may have been removed together with true spectral noise through MNF transformations.

Elastic band prediction equations for combined free-weight and elastic band bench presses and squats.

PubMed

Shoepe, Todd C; Ramirez, David A; Almstedt, Hawley C

2010-01-01

Elastic bands added to traditional free-weight techniques have become a part of suggested training routines in recent years. Because of the variable loading patterns of elastic bands (i.e., greater stretch produces greater resistance), it is necessary to quantify the exact loading patterns of bands to identify the volume and intensity of training. The purpose of this study was to determine the length vs. tension properties of multiple sizes of a set of commonly used elastic bands to quantify the resistance that would be applied to free-weight plus elastic bench presses (BP) and squats (SQ). Five elastic bands of varying thickness were affixed to an overhead support beam. Dumbbells of varying weights were progressively added to the free end while the linear deformation was recorded with each subsequent weight increment. The resistance was plotted as a factor of linear deformation, and best-fit nonlinear logarithmic regression equations were then matched to the data. For both the BP and SQ loading conditions and all band thicknesses tested, R values were greater than 0.9623. These data suggest that differences in load exist as a result of the thickness of the elastic band, attachment technique, and type of exercise being performed. Facilities should adopt their own form of loading quantification to match their unique set of circumstances when acquiring, researching, and implementing elastic band and free-weight exercises into the training programs.

Spectral analysis of crater central peak material (ccp)

NASA Astrophysics Data System (ADS)

Galiano, A.; Palomba, E.; Longobardo, A.; De Sanctis, M. C.; Raponi, A.; Tosi, F.; Ammannito, E.; Raymond, C. A.; Russell, C. T.

2017-09-01

We spectrally investigated 32 ccp units, which stand out in geologic maps of Ceres as they exhibit a different color and morphology with respect to the surrounding floor. We focus our attention on spectral parameters related to Mg-phyllosilicates (2.7 μm band), ammoniated phyllosilicates (3.1 μm band) and carbonates (bands at about 3.4 and 4.0 μm).

A Feasibility Study for Developing an Innovative Course of Study for the Contemporary School Band Program. Final Report.

ERIC Educational Resources Information Center

1968

Five nationally recognized high school band directors conducted a study to investigate the problems and determine the feasibility of developing and publishing a comprehensive curriculum guide for school band programs. A review of materials relevant to the study included the examination of state and city music curriculum guides, of publications…

From lattice Hamiltonians to tunable band structures by lithographic design

NASA Astrophysics Data System (ADS)

Tadjine, Athmane; Allan, Guy; Delerue, Christophe

2016-08-01

Recently, new materials exhibiting exotic band structures characterized by Dirac cones, nontrivial flat bands, and band crossing points have been proposed on the basis of effective two-dimensional lattice Hamiltonians. Here, we show using atomistic tight-binding calculations that these theoretical predictions could be experimentally realized in the conduction band of superlattices nanolithographed in III-V and II-VI semiconductor ultrathin films. The lithographed patterns consist of periodic lattices of etched cylindrical holes that form potential barriers for the electrons in the quantum well. In the case of honeycomb lattices, the conduction minibands of the resulting artificial graphene host several Dirac cones and nontrivial flat bands. Similar features, but organized in different ways, in energy or in k -space are found in kagome, distorted honeycomb, and Lieb superlattices. Dirac cones extending over tens of meV could be obtained in superlattices with reasonable sizes of the lithographic patterns, for instance in InAs/AlSb heterostructures. Bilayer artificial graphene could be also realized by lithography of a double quantum-well heterostructure. These new materials should be interesting for the experimental exploration of Dirac-based quantum systems, for both fundamental and applied physics.

Modulating the band structure and sub-bandgap absorption of Co-hyperdoped silicon by co-doping with shallow-level elements

NASA Astrophysics Data System (ADS)

Dong, Xiao; Fang, Xiuxiu; Wang, Yongyong; Song, Xiaohui; Lu, Zhansheng

2018-06-01

Hyperdoped group-III elements can lower the Fermi energy in the band structures of Co-hyperdoped silicon. When the Co-to-X (X = B, Al, Ga) ratio is 2:1, the intermediate band (IB) in the bandgap includes the Fermi energy and is partially filled by electrons, which is in accordance with the requirement of an IB material. The hyperdoped X atoms can cause the blueshift of the sub-bandgap absorption of the compound compared with the material with no shallow-level elements, which is due to the enlargement of the electronic excitation energy of the Co,X-co-doped silicon.

Growth and applications of GeSn-related group-IV semiconductor materials

PubMed Central

Zaima, Shigeaki; Nakatsuka, Osamu; Taoka, Noriyuki; Kurosawa, Masashi; Takeuchi, Wakana; Sakashita, Mitsuo

2015-01-01

We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1−xSnx-related material thin films and the studies of the electronic properties of thin films, metals/Ge1−xSnx, and insulators/Ge1−xSnx interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1−xSnx-related materials, as well as the reported performances of electronic devices using Ge1−xSnx related materials. PMID:27877818

Growth and applications of GeSn-related group-IV semiconductor materials.

PubMed

Zaima, Shigeaki; Nakatsuka, Osamu; Taoka, Noriyuki; Kurosawa, Masashi; Takeuchi, Wakana; Sakashita, Mitsuo

2015-08-01

We review the technology of Ge 1- x Sn x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge 1- x Sn x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge 1- x Sn x -related material thin films and the studies of the electronic properties of thin films, metals/Ge 1- x Sn x , and insulators/Ge 1- x Sn x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge 1- x Sn x -related materials, as well as the reported performances of electronic devices using Ge 1- x Sn x related materials.

Colors and Photometry of Bright Materials on Vesta as Seen by the Dawn Framing Camera

NASA Technical Reports Server (NTRS)

Schroeder, S. E.; Li, J.-Y.; Mittlefehldt, D. W.; Pieters, C. M.; De Sanctis, M. C.; Hiesinger, H.; Blewett, D. T.; Russell, C. T.; Raymond, C. A.; Keller, H. U.;

High throughput light absorber discovery, Part 1: An algorithm for automated tauc analysis

DOE PAGES

Suram, Santosh K.; Newhouse, Paul F.; Gregoire, John M.

2016-09-23

High-throughput experimentation provides efficient mapping of composition-property relationships, and its implementation for the discovery of optical materials enables advancements in solar energy and other technologies. In a high throughput pipeline, automated data processing algorithms are often required to match experimental throughput, and we present an automated Tauc analysis algorithm for estimating band gap energies from optical spectroscopy data. The algorithm mimics the judgment of an expert scientist, which is demonstrated through its application to a variety of high throughput spectroscopy data, including the identification of indirect or direct band gaps in Fe 2O 3, Cu 2V 2O 7, and BiVOmore » 4. Here, the applicability of the algorithm to estimate a range of band gap energies for various materials is demonstrated by a comparison of direct-allowed band gaps estimated by expert scientists and by automated algorithm for 60 optical spectra.« less

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E. (Inventor)

2014-01-01

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

Controlling the electronic properties of van der Waals heterostructures by applying electrostatic design

NASA Astrophysics Data System (ADS)

Winkler, Christian; Harivyasi, Shashank S.; Zojer, Egbert

2018-07-01

Van der Waals heterostructures based on the heteroassembly of 2D materials represent a recently developed class of materials with promising properties especially for optoelectronic applications. The alignment of electronic energy bands between consecutive layers of these heterostructures crucially determines their functionality. In the present paper, relying on dispersion-corrected density-functional theory calculations, we present electrostatic design as a promising tool for manipulating this band alignment. The latter is achieved by inserting a layer of aligned polar molecules between consecutive transition-metal dichalcogenide (TMD) sheets. As a consequence, collective electrostatic effects induce a shift of as much as 0.3 eV in the band edges of successive TMD layers. Building on that, the proposed approach can be used to design electronically more complex systems, like quantum cascades or quantum wells, or to change the type of band lineup between type II and type I.

Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Z. Q.; Chim, W. K.; Chiam, S. Y

2011-11-01

In this work, photoelectron spectroscopy is used to characterize the band alignment of lanthanum aluminate heterostructures which possess a wide range of potential applications. It is found that our experimental slope parameter agrees with theory using the metal-induced gap states model while the interface induced gap states (IFIGS) model yields unsatisfactory results. We show that this discrepancy can be attributed to the correlation between the dielectric work function and the electronegativity in the IFIGS model. It is found that the original trend, as established largely by metals, may not be accurate for larger band gap materials. By using a newmore » correlation, our experimental data shows good agreement of the slope parameter using the IFIGS model. This correlation, therefore, plays a crucial role in heterostructures involving wider bandgap materials for accurate band alignment prediction using the IFIGS model.« less

Spin texture of the surface state of three-dimensional Dirac material Ca3PbO

NASA Astrophysics Data System (ADS)

Kariyado, Toshikaze

2015-04-01

The bulk and surface electronic structures of a candidate three-dimensional Dirac material Ca3PbO and its family are discussed especially focusing on the spin texture on the surface states. We first explain the basic features of the bulk band structure of Ca3PbO, such as emergence of Dirac fermions near the Fermi energy, and compare it with the other known three-dimensional Dirac semimetals. Then, the surface bands and spin-texture on them are investigated in detail. It is shown that the surface bands exhibit strong momentum-spin locking, which may be useful in some application for spin manipulation, induced by a combination of the inversion symmetry breaking at the surface and the strong spin-orbit coupling of Pb atoms. The surface band structure and the spin-textures are sensitive to the surface types.

Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2

NASA Astrophysics Data System (ADS)

Waterhouse, G. I. N.; Wahab, A. K.; Al-Oufi, M.; Jovic, V.; Anjum, D. H.; Sun-Waterhouse, D.; Llorca, J.; Idriss, H.

2013-10-01

Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.

Metal band drives in spacecraft mechanisms

NASA Technical Reports Server (NTRS)

Maus, Daryl

1993-01-01

Transmitting and changing the characteristics of force and stroke is a requirement in nearly all mechanisms. Examples include changing linear to rotary motion, providing a 90 deg change in direction, and amplifying stroke or force. Requirements for size, weight, efficiency and reliability create unique problems in spacecraft mechanisms. Flexible metal band and cam drive systems provide powerful solutions to these problems. Band drives, rack and pinion gears, and bell cranks are compared for effectiveness. Band drive issues are discussed including materials, bend radius, fabrication, attachment and reliability. Numerous mechanisms are shown which illustrate practical applications of band drives.

Structure of the Odd-Odd Nucleus {sup 188}Re

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balodis, M.; Berzins, J.; Simonova, L.

2009-01-28

Thermal neutron capture gamma-ray spectra for {sup 187}Re(n,{gamma}){sup 188}Re reaction were measured. Singles and coincidence spectra were detected in order to develop the level scheme. The evaluation is in progress, of which the first results are obtained from the analysis of coincidence spectra, allowing to check the level scheme below 500 keV excitation energy. Seven low-energy negative parity bands are developed in order to find better energies for rotational levels. With a good confidence, a few positive parity bands are developed as well. Rotor plus two quasiparticle model calculations, employing effective matrix element method are performed for the system ofmore » six negative parity rotational bands.« less

DFT Studies of Semiconductor and Scintillator Detection Materials

NASA Astrophysics Data System (ADS)

Biswas, Koushik

2013-03-01

Efficient radiation detection technology is dependent upon the development of new semiconductor and scintillator materials with advanced capabilities. First-principles based approaches can provide vital information about the structural, electrical, optical and defect properties that will help develop new materials. In addition to the predictive power of modern density functional methods, these techniques can be used to establish trends in properties that may lead to identifying new materials with optimum properties. We will discuss the properties of materials that are of current interest both in the field of scintillators and room temperature semiconductor detectors. In case of semiconductors, binary compounds such as TlBr, InI, CdTe and recently developed ternary chalcohalide Tl6SeI4 will be discussed. Tl6SeI4 mixes a halide (TlI) with a chalcogenide (Tl2Se), which results in an intermediate band gap (1.86 eV) between that of TlI (2.75 eV) and Tl2Se (0.6 eV). For scintillators, we will discuss the case of the elpasolite compounds whose rich chemical compositions should enable the fine-tuning of the band gap and band edges to achieve high light yield and fast scintillation response.

Exciton-Induced Degradation of Carbazole-Based Host Materials and Its Role in the Electroluminescence Spectral Changes in Phosphorescent Organic Light Emitting Devices with Electrical Aging.

PubMed

Yu, Hyeonghwa; Zhang, Yingjie; Cho, Yong Joo; Aziz, Hany

2017-04-26

We investigate the origins of the long-wavelength bands that appear in the emission spectra of carbazole-based host materials and play a role in the electroluminescence (EL) spectral changes of phosphorescent organic light emitting devices (PhOLEDs) with electrical aging. 4,4'-Bis(carbazol-9-yl)biphenyl (CBP) is used as a model carbazole host material and is studied using photoluminescence, EL, and atomic force microscopy measurements under various stress scenarios in both single and bilayer devices and in combination with various electron transport layer (ETL) materials. Results show that exciton-induced morphological aggregation of CBP is behind the appearance of those long-wavelength bands and that complexation between the aggregated CBP molecules and ETL molecules plays a role in this phenomenon. Comparisons between the effects of exciton and thermal stress suggest that exciton-induced aggregation may be limited to short-range molecular ordering or pairing (e.g., dimer or trimer species formation) versus longer-range ordering (crystallization) in the case of thermal stress. The findings provide new insights into exciton-induced degradation in wide band gap host materials and its role in limiting the stability of PhOLEDs.

Transformation of silicate gels during heat treatment in air and in argon - Spectroscopic studies

NASA Astrophysics Data System (ADS)

Rokita, M.; Mozgawa, W.; Adamczyk, A.

2014-07-01

The sol-gel method offers the possibility of obtaining silicate materials with different chemical compositions. When using TEOS or other organic precursor to silica capable of hydrolysis and poly-condensation, it is possible to use inorganic or organic precursors to produce other ingredients. This paper presents results of studying two series of silicate sols with the addition of calcium, in which the molar ratio of calcium to silicon was Ca/Si = x/(100 - x), where x was, respectively, 0-40 (x = 0-control sample). The resulting gels were subjected to heat treatment, wherein the heating was carried out simultaneously in air or in argon. To study the various stages of transformation of the gels, IR spectroscopy was used as the main research method to observe gradual disappearance of bands associated with bonds typical of organic materials and formation of bands characteristic of Si-O-Si bridging bonds. Due to the amorphous or fine crystalline nature of the resulting material, as confirmed in XRD studies, the different bands on the IR spectra were characterized by large full width at half maximum, hence an attempt was made to decompose the spectra into component bands. The analytic parameters of the resulting bands warranted the conclusion that there had been structural changes caused by the varying synthesis parameters. A comparison of the sol spectra after heat treatment in air and in argon at different temperatures showed a clear decrease in the full width at half maximum in the case of bands of samples with calcium content x ⩾ 30. The resulting spectra were compared with spectra of crystalline tobermorite, quartz and pseudowollastonite, which suggested the possibility of existence of areas with quartz-like ordering in the case of materials with calcium content x ⩾ 20 for the samples heated in argon and areas with pseudowollastonite-like ordering in the case of materials with calcium content x ⩾ 10 for the samples heated in air atmosphere. The conclusions drawn on the basis of infrared spectra were confirmed by XRD - prolonged heating of gels at 700 °C allowed us to obtain fine quartz and pseudowollastonite.

Effect of Rare Earth Elements (Er, Ho) on Semi-Metallic Materials (ScN) in an Applied Electric Field

NASA Technical Reports Server (NTRS)

Kim, Hyunjung; Park, Yeonjoon; King, Glen C.; Lee, Kunik; Choi, Sang H.

2012-01-01

The development of materials and fabrication technology for field-controlled spectrally active optics is essential for applications such as membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras and flat-panel displays. The dopants of rare earth elements, in a host of optical systems, create a number of absorption and emission band structures and can easily be incorporated into many high quality crystalline and amorphous hosts. In wide band-gap semiconductors like ScN, the existing deep levels can capture or emit the mobile charges, and can be ionized with the loss or capture of the carriers which are the fundamental basis of concept for smart optic materials. The band gap shrinkage or splitting with dopants supports the possibility of this concept. In the present work, a semi-metallic material (ScN) was doped with rare earth elements (Er, Ho) and tested under an applied electric field to characterize spectral and refractive index shifts by either Stark or Zeeman Effect. These effects can be verified using the UV-Vis spectroscopy, the Hall Effect measurement and the ellipsometric spectroscopy. The optical band gaps of ScN doped with Er and doped with Ho were experimentally estimated as 2.33eV and 2.24eV ( 0.2eV) respectively. This is less than that of undoped ScN (2.5 0.2eV). The red-shifted absorption onset is a direct evidence for the decrease of band gap energy (Eg), and the broadening of valence band states is attributable to the doping cases. A decrease in refractive index with an applied field was observed as a small shift in absorption coefficient using a variable angle spectroscopic ellipsometer. In the presence of an electric field, mobile carriers are redistributed within the space charge region (SCR) to produce this electro-refractive effect. The shift in refractive index is also affected by the density and location of deep potential wells within the SCR. In addition, the microstructure change was observed by a TEM analysis. These results give an insight for future applications for the field-controlled spectrally active material systems.

Strip dielectric wave guide antenna-for the measurement of dielectric constant of low-loss materials

NASA Astrophysics Data System (ADS)

Rastogi, Alok Kumar; Tiwari, A. K.; Shrivastava, R. P.

1993-07-01

The value of dielectric constant are the most important parameters in material science technology. In micro-wave and millimeter wave circuits using dielectric materials the values of this parameters should be known accurately. It is observed that the number of methods are reported in litrature, however these methods impose difficulties in experimentation and are not very accurate. In this paper a novel approach to the measurement of the dielectric constant of low loss materials at micro-wave and millimeter wave frequencies has been discussed. In this method by using antenna theory, a metallic strip dielectric guide is taken in to constideration and band reject phenomenon of dielectric antenna is used. Frequency response of an antenna in band reject mode is a function of the dimensional parameters, such as the metallic strip period, the profile of the metallic strip and the dielectric constant of the material used. Hence if one measure the frequency responce of the antenna in band reject mode, the dielectric constant of the material is determined provided all other parameters are known. This method gives a direct measure of dielectric constant and is quite accurate as computer techniques are used for evaluating the dielectric constant. This method verified experimentally also.

Metal-induced gap states in ferroelectric capacitors and its relationship with complex band structures

NASA Astrophysics Data System (ADS)

Junquera, Javier; Aguado-Puente, Pablo

2013-03-01

At metal-isulator interfaces, the metallic wave functions with an energy eigenvalue within the band gap decay exponentially inside the dielectric (metal-induced gap states, MIGS). These MIGS can be actually regarded as Bloch functions with an associated complex wave vector. Usually only real values of the wave vectors are discussed in text books, since infinite periodicity is assumed and, in that situation, wave functions growing exponentially in any direction would not be physically valid. However, localized wave functions with an exponential decay are indeed perfectly valid solution of the Schrodinger equation in the presence of defects, surfaces or interfaces. For this reason, properties of MIGS have been typically discussed in terms of the complex band structure of bulk materials. The probable dependence on the interface particulars has been rarely taken into account explicitly due to the difficulties to include them into the model or simulations. We aim to characterize from first-principles simulations the MIGS in realistic ferroelectric capacitors and their connection with the complex band structure of the ferroelectric material. We emphasize the influence of the real interface beyond the complex band structure of bulk materials. Financial support provided by MICINN Grant FIS2009-12721-C04-02, and by the European Union Grant No. CP-FP 228989-2 ``OxIDes''. Computer resources provided by the RES.

Stabilization of Wide Band-Gap p-Type Wurtzite MnTe Thin Films on Amorphous Substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zakutayev, Andriy A; Siol, Sebastian; Han, Yanbing

An important challenge in the development of optoelectronic devices for energy conversion applications is the search for suitable p-type contact materials. For example, p-type MnTe would be a promising alternative back contact to due to their chemical compatibility, but at normal conditions it has too narrow band gap due to octahedrally coordinated nickeline (NC) structure. The tetrahedrally coordinated wurtzite (WZ) polymorph of MnTe has not been reported, but it is especially interesting due to its predicted wider band gap, and because of better structural compatibility with CdTe and related II-VI semiconductor materials. Here, we report on the stabilization of WZ-MnTemore » thin films on amorphous indium zinc oxide (a-IZO) substrates relevant to photovoltaic applications. Optical spectroscopy of the WZ-MnTe films shows a wide direct band gap of Eg = 2.7 eV, while PES measurements reveal weak p-type doping with the Fermi level 0.6 eV above the valence band maximum. The results of electron microscopy and photoelectron spectroscopy (PES) measurements indicate that the WZ-MnTe is stabilized due to interdiffusion at the interface with IZO. The results of this work introduce a substrate stabilized WZ-MnTe polymorph as a potential p-type contact material candidate for future applications in CdTe devices for solar energy conversion and other optoelectronic technologies.« less

The excitonic photoluminescence mechanism and lasing action in band-gap-tunable CdS(1-x)Se(x) nanostructures.

PubMed

Dai, Jun; Zhou, Pengxia; Lu, Junfeng; Zheng, Hongge; Guo, Jiyuan; Wang, Fang; Gu, Ning; Xu, Chunxiang

2016-01-14

Bandgap tunable semiconductor materials have wide application in integrated-optoelectronic and communication devices. The CdS1-xSex ternary semiconductor materials covering green-red bands have been reported previously, but their basic band-gap and optical properties crucial to the performance of the CdS1-xSex-based optoelectronic devices have not been deeply understood. In this paper, we theoretically simulated and discussed the feasibility of bandgap-tunable CdS1-xSex nanomaterials for designing wavelength tunable microlasers. Then we fabricated the CdS1-xSex nanobelts with their band gap ranging from 2.4 to 1.74 eV by adjusting the composition ratio x in the vapor-phase-transport growth process. The temperature-dependent photoluminescence and exciton-related optical constants of the CdS1-xSex nanobelts were carefully demonstrated. Finally, the wavelength-tunable Fabry-Perot lasing in CdS1-xSex nanobelts was obtained, and the Fabry-Perot lasing mechanism was numerically simulated by the FDTD method. The systematic results on the mechanism of the tunable band gap, exciton properties and lasing of the CdS1-xSex nanostructure help us deeply understand the intrinsic optical properties of this material, and will build a strong foundation for future application of green-red wavelength-tunable CdS1-xSex microlasers.

Thematic mapper research in the Earth sciences: Tectonic evaluation of the Nubian Shield of northeastern Sudan/southeastern Egypt using thematic mapper imagery

NASA Technical Reports Server (NTRS)

1986-01-01

The tectonic evaluation of the Nubian Shield using the Thematic Mapper (TM) imagery is progressing well and shows great promise. The TM tapes for the six LANDSAT 5 scenes covering the northern portion of the Red Sea hills were received, and preliminary maps and interpretations were made for most of the area. It is apparent that faulting and shearing associated with the major suture zones such as the Sol Hamed are clearly visible and that considerable detail can be seen. An entire quadrant of scene 173,45 was examined in detail using all seven bands, and every band combination was evaluated to best display the geology. A comparison was done with color ratio combinations and color combinations of the eigen vector bands to verify if band combinations of 7-red, 4-green, and 2-blue were indeed superior. There is no single optimum enhancement which provides the greatest detail for every image and no single combination of spectral bands for all cases, although bands 7, 4, and 2 do provide the best overall display. The color combination of the eigen vector bands proved useful in distinguishing fine detailed features.

BariumCopperChFluorine (Ch = Sulfur, Selenium, Tellurium) p-type transparent conductors

NASA Astrophysics Data System (ADS)

Zakutayev, Andriy

BaCuChF (Ch = S, Se, Te) materials are chalcogen-based transparent conductors with wide optical band gaps (2.9 -- 3.5 eV) and a high concentration of free holes (1018 -- 1020 cm-3 ) caused by the presence of copper vacancies. Chalcogen vacancies compensate copper vacancies in these materials, setting the Fermi level close to the valence band maximum. BaCuChF thin film solid solutions prepared by pulsed laser deposition (PLD) have tunable properties, such as lattice constants, conductivity and optical band gaps. BaCuSF and BaCuSeF materials also feature room-temperature stable 3D excitons with spin-orbit-split levels. BaCuTeF has forbidden lowest-energy optical transitions which extends its transparency range. BaCuChF surfaces oxidize when exposed to air, but can be protected using Ch capping layers. Polycrystalline BaCuSeF thin films have a 4.85 eV work function, a 0.11 eV hole injection barrier into ZnPc, and 0.00 eV valence band offset with ZnTe. BaCuSeF should have s similar band offset and similar interfacial properties with CdTe and Cu(InGa)Se2, and BaCuSF should have no valence band offset with Cu2ZnSnS4, according to the transitivity rule. Therefore, BaCuSeF is suitable for applications as a p-layer in organic light-emitting diodes, p-i-n double-heterojunction and tandem chalcogenide solar cells.

Extenstional terrain formation in icy satellites: Implications for ocean-surface interaction

NASA Astrophysics Data System (ADS)

Howell, Samuel M.; Pappalardo, Robert T.

2017-10-01

Europa and Ganymede, Galilean satellites of Jupiter, exhibit geologic activity in their outer H2O ice shells that might convey material from water oceans within the satellites to their surfaces. Imagery from the Voyager and Galileo spacecraft reveal surfaces rich with tectonic deformation, including dilational bands on Europa and groove lanes on Ganymede. These features are generally attributed to the extension of a brittle ice lithosphere overlaying a possibly convecting ice asthenosphere. To explore band formation and interaction with interior oceans, we employ fully visco-elasto-plastic 2-D models of faulting and convection with complex, realistic pure ice rheologies. In these models, material entering from below is tracked and considered to be “fossilized ocean,” ocean material that has frozen into the ice shell and evolves through geologic time. We track the volume fraction of fossil ocean material in the ice shell as a function of depth, and the exposure of both fresh ice and fossil ocean material at the ice shell surface. To explore the range in extensional terrains, we vary ice shell thickness, fault localization, melting-temperature ice viscosity, and the presence of pre-existing weaknesses. Mechanisms which act to weaken the ice shell and thin the lithosphere (e.g. vigorous convection, thinner shells, pre-existing weaknesses) tend to plastically yield to form smooth bands at high strains, and are more likely to incorporate fossil ocean material in the ice shell and expose it at the surface. In contrast, lithosphere strengthened by rapid fault annealing or increased viscosity, for example, exhibits large-scale tectonic rifting at low strains superimposed over pre-existing terrains, and inhibits the incorporation and delivery of fossil ocean material to the surface. Thus, our results identify a spectrum of extensional terrain formation mechanisms as linked to lithospheric strength, rather than specific mechanisms that are unique to each type of band, and discuss where in this spectrum ocean material incorporated at the bottom of the ice shell may be exposed on the satellite surface.

Extensional terrain formation on Europa and Ganymede: Implications for ocean-surface interaction

NASA Astrophysics Data System (ADS)

Howell, S. M.; Pappalardo, R. T.

2017-12-01

Europa and Ganymede, Galilean satellites of Jupiter, exhibit geologic activity in their outer H2O ice shells that might convey material from water oceans within the satellites to their surfaces. Imagery from the Voyager and Galileo spacecraft reveal surfaces rich with tectonic deformation, including dilational bands on Europa and groove lanes on Ganymede. These features are generally attributed to the extension of a brittle ice lithosphere overlaying a possibly convecting ice asthenosphere. To explore band formation and interaction with interior oceans, we employ fully visco-elasto-plastic 2-D models of faulting and convection with complex, realistic pure ice rheologies. In these models, material entering from below is tracked and considered to be "fossilized ocean," ocean material that has frozen into the ice shell and evolves through geologic time. We track the volume fraction of fossil ocean material in the ice shell as a function of depth, and the exposure of both fresh ice and fossil ocean material at the ice shell surface. We vary ice shell thickness, fault localization, melting-temperature ice viscosity, and the presence of pre-existing weaknesses. Mechanisms which act to weaken the ice shell and thin the lithosphere (e.g. vigorous convection, thinner shells, pre-existing weaknesses) tend to plastically yield to form smooth bands at high strains, and are more likely to incorporate fossil ocean material in the ice shell and expose it at the surface. In contrast, lithosphere strengthened by rapid fault annealing or increased viscosity, for example, exhibits large-scale tectonic rifting at low strains superimposed over pre-existing terrains, and inhibits the incorporation and delivery of fossil ocean material to the surface. Thus, our results identify a spectrum of extensional terrain formation mechanisms as linked to lithospheric strength, rather than any specific mechanism being unique to each type of band, and where in this spectrum ocean material incorporated at the bottom of the ice shell may be exposed on the satellite surface.

Low-temperature and low atmospheric pressure infrared reflectance spectroscopy of Mars soil analog materials

NASA Technical Reports Server (NTRS)

Bishop, Janice L.; Pieters, Carle M.

1995-01-01

Infrared reflectance spectra of carefully selected Mars soil analog materials have been measured under low atmospheric pressures and temperatures. Chemically altered montmorillonites containing ferrihydrite and hydrated ferric sulfate complexes are examined, as well as synthetic ferrihydrate and a palagonitic soil from Haleakala, Maui. Reflectance spectra of these analog materials exhibit subtle visible to near-infrared features, which are indicative of nanophase ferric oxides or oxyhydroxides and are similar to features observed in the spectra of the bright regions of Mars. Infrared reflectance spectra of these analogs include hydration features due to structural OH, bound H2O and adsorbed H2O. The spectal character of these hydration features is highly dependent on the sample environment and on the nature of the H2O/OH in the analogs. The behavior of the hydration features near 1.9 micrometers, 2.2 micrometers, 2.7 micrometers, 3 micrometers, and 6 micrometers are reported here in spetra measured under Marslike atmospheric environment. In spectra of these analogs measured under dry Earth atmospheric conditions the 1.9-micrometer band depth is 8-17%; this band is much stonger under moist conditions. Under Marslike atmospheric conditions the 1.9-micrometer feature is broad and barely discernible (1-3% band depth) in spectra of the ferrihydrite and palagonitic soil samples. In comparable spectra of the ferric sulfate-bearing montmorillonite the 1.9-micrometer feature is also broad, but stronger (6% band depth). In the low atmospheric pressure and temperature spectra of the ferrihydrite-bearing montmorillonite this feature is sharper than the other analogs and relatively stronger (6% band depth). Although the intensity of the 3- micrometer band is weaker in spectra of each of the analogs when measured under Marslike conditions, the 3-micromter band remains a dominant feature and is especially broad in spectra of the ferrihydrite and palagonitic soil. The structural OH features observed in these materials at 2.2-2.3 micrometers and 2.27 micrometers remain largely unaffected by the environmental conditions. A shift in the Christiansen feature towards shorter wavelengths has also been observed with decreasing atmospheric pressure and temperature in the midinfrared spectra of these samples.

Low-temperature and low atmospheric pressure infrared reflectance spectroscopy of Mars soil analog materials

NASA Technical Reports Server (NTRS)

Bishop, Janice L.; Pieters, Carle M.

1995-01-01

Infrared reflectance spectra of carefully selected Mars soil analog materials have been measured under low atmospheric pressures and temperatures. Chemically altered montmorillonites containing ferrihydrite and hydrated ferric sulfate complexes are examined, as well as synthetic ferrihydrite and a palagonitic soil from Haleakala, Maui. Reflectance spectra of these analog materials exhibit subtle visible to near-infrared features, which are indicative of nanophase ferric oxides or oxyhydroxides and are similar to features observed in the spectra of the bright regions of Mars. Infrared reflectance spectra of these analogs include hydration features due to structural OH, bound H2O, and adsorbed H2O. The spectral character of these hydration features is highly dependent on the sample environment and on the nature of the H2O/OH in the analogs. The behavior of the hydration features near 1.9 micron, 2.2 micron, 2.7 micron, 3 micron, and 6 microns are reported here in spectra measured under a Marslike atmospheric environment. In spectra of these analogs measured under dry Earth atmospheric conditions the 1.9-micron band depth is 8-17%; this band is much stronger under moist conditions. Under Marslike atmospheric conditions the 1.9-micron feature is broad and barely discernible (1-3% band depth) in spectra of the ferrihydrite and palagonitic soil samples. In comparable spectra of the ferric sulfate-bearing montmorillonite the 1.9-micron feature is also broad, but stronger (6% band depth). In the low atmospheric pressure and temperature spectra of the ferrihydrite-bearing montmorillonite this feature is sharper than the other analogs and relatively stronger (6% band depth). Although the intensity of the 3-micron band is weaker in spectra of each of the analogs when measured under Marslike conditions, the 3-micron band remains a dominant feature and is especially broad in spectra of the ferrihydrite and palagonitic soil. The structural OH features observed in these materials at 2.2-2.3 micron and 2.75 microns remain largely unaffected by the environmental conditions. A shift in the Christiansen feature towards shorter wavelengths has also been observed with decreasing atmospheric pressure and temperature in the midinfrared spectra of these samples.

Chemiluminescence of nitric oxide

NASA Technical Reports Server (NTRS)

Sharp, W. E.; Rusch, D. W.

1981-01-01

Measurements of the intensities of the delta and gamma bands of nitric oxide in the nighttime terrestrial thermosphere are presented and used to infer the rate coefficient for the transition from the C 2 Pi to the A 2 Sigma + states. The nightglow spectrum was observed between 1900 and 2300 A at a resolution of 15 A by a rocket-borne scanning 1/4-m spectrometer pointing north at an apogee of 150 km. Progressions of the delta, gamma and epsilon bands are identified on the spectra by the construction of synthetic spectra, and the contributions of resonance fluorescence to the total band intensities are calculated. Finally, the ratio of the sum of the gamma bands for v-prime = 0 to the sum of the delta bands for v-prime = 0 is used to derive a branching ratio of 0.21 + or - 0.04 to the A 2 Sigma + state, which yields a probability for the C-A transition of 5.6 + or - 1.5 x to the 6th/sec.

Raman spectral characteristics of magmatic-contact metamorphic coals from Huainan Coalfield, China

NASA Astrophysics Data System (ADS)

Chen, Shancheng; Wu, Dun; Liu, Guijian; Sun, Ruoyu

2017-01-01

Normal burial metamorphism of coal superimposed by magmatic-contact metamorphism makes the characteristics of the Raman spectrum of coal changed. Nine coal samples were chosen at a coal transect perpendicular to the intrusive dike, at the No. 3 coal seam, Zhuji Coal Mine, Huainan Coalfield, China, with different distances from dike-coal boundary (DCB). Geochemical (proximate and ultimate) analysis and mean random vitrinite reflectance (R0, %) indicate that there is a significant relationship between the values of volatile matter and R0 in metamorphosed coals. Raman spectra show that the graphite band (G band) becomes the major band but the disordered band (D band) disappears progressively, with the increase of metamorphic temperature in coals, showing that the structural organization in high-rank contact-metamorphosed coals is close to that of well-crystallized graphite. Evident relationships are observed between the calculated Raman spectral parameters and the peak metamorphic temperature, suggesting some spectral parameters have the potentials to be used as geothermometers for contact-metamorphic coals.

Fatigue failure of materials under broad band random vibrations

NASA Technical Reports Server (NTRS)

Huang, T. C.; Lanz, R. W.

1971-01-01

The fatigue life of material under multifactor influence of broad band random excitations has been investigated. Parameters which affect the fatigue life are postulated to be peak stress, variance of stress and the natural frequency of the system. Experimental data were processed by the hybrid computer. Based on the experimental results and regression analysis a best predicting model has been found. All values of the experimental fatigue lives are within the 95% confidence intervals of the predicting equation.

V-doped SnS2: a new intermediate band material for a better use of the solar spectrum.

PubMed

Wahnón, Perla; Conesa, José C; Palacios, Pablo; Lucena, Raquel; Aguilera, Irene; Seminovski, Yohanna; Fresno, Fernando

2011-12-07

Intermediate band materials can boost photovoltaic efficiency through an increase in photocurrent without photovoltage degradation thanks to the use of two sub-bandgap photons to achieve a full electronic transition from the valence band to the conduction band of a semiconductor structure. After having reported in previous works several transition metal-substituted semiconductors as able to achieve the electronic structure needed for this scheme, we propose at present carrying out this substitution in sulfides that have bandgaps of around 2.0 eV and containing octahedrally coordinated cations such as In or Sn. Specifically, the electronic structure of layered SnS(2) with Sn partially substituted by vanadium is examined here with first principles quantum methods and seen to give favourable characteristics in this respect. The synthesis of this material in nanocrystalline powder form is then undertaken and achieved using solvothermal chemical methods. The insertion of vanadium in SnS(2) is found to produce an absorption spectrum in the UV-Vis-NIR range that displays a new sub-bandgap feature in agreement with the quantum calculations. A photocatalytic reaction-based test verifies that this sub-bandgap absorption produces highly mobile electrons and holes in the material that may be used for the solar energy conversion, giving experimental support to the quantum calculations predictions.

School Music Resource.

ERIC Educational Resources Information Center

Music Educators Journal, 1988

1988-01-01

Provides a classified index to the companies and institutions that offer products and services for music educators. The list contains over 400 entries classified according to 19 categories such as books and textbooks, band uniforms, band instruments, multimedia learning materials, and music retailers. (JDH)

Investigation of the shear response and geometrically necessary dislocation densities in shear localization in high-purity titanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Chaoyi; Livescu, Veronica; Harrington, Tyler

The influence of microstructural anisotropy on shear response of high-purity titanium was studied using the compact forced-simple-shear specimen (CFSS) loaded under quasi-static loading conditions. Post-mortem characterization reveals significant difference in shear response of different directions in the same material due to material crystallographic texture anisotropy. Shear bands are narrower in specimens in which the shear zone is aligned along the direction with a strong {0001} basal texture. Twinning was identified as an active mechanism to accommodate strains in the shear region in both orientations. This paper confirms the applicability of the CFSS design for the investigation of differences in themore » shear response of materials as a function of process-induced crystallographic texture. A detailed, systematic approach to quantifying shear band evolution by evaluating geometrically necessary dislocations (GND) associated with crystallographic anisotropy is presented. Finally, the results show that: i) line average GND density profiles, for Ti samples that possess a uniform equiaxed-grain structure, but with strong crystallographic anisotropy, exhibit significant differences in GND density close to the shear band center; ii) GND profiles decrease steadily away from the shear band as the plastic strain diminishes, in agreement with Ashby's theory of work hardening, where the higher GND density in the through-thickness (TT) orientation is a result of restricted < a > type slip in the shear band compared with in-plane (IP) samples; iii) the anisotropy in deformation response is derived from initial crystallographic texture of the materials, where GND density of < a > GNDs are higher adjacent to the shear band in the through-thickness sample oriented away from easy slip, but the density of < c+a > type GNDs are very similar in these two samples; and iv) the increase in grain average GND density was determined to have strong correlation to an increase in the Euler Φ angle of the grain average orientation, indicating an increased misorientation angle evolution.« less

Investigation of the shear response and geometrically necessary dislocation densities in shear localization in high-purity titanium

DOE PAGES

Zhu, Chaoyi; Livescu, Veronica; Harrington, Tyler; ...

2017-03-31

The influence of microstructural anisotropy on shear response of high-purity titanium was studied using the compact forced-simple-shear specimen (CFSS) loaded under quasi-static loading conditions. Post-mortem characterization reveals significant difference in shear response of different directions in the same material due to material crystallographic texture anisotropy. Shear bands are narrower in specimens in which the shear zone is aligned along the direction with a strong {0001} basal texture. Twinning was identified as an active mechanism to accommodate strains in the shear region in both orientations. This paper confirms the applicability of the CFSS design for the investigation of differences in themore » shear response of materials as a function of process-induced crystallographic texture. A detailed, systematic approach to quantifying shear band evolution by evaluating geometrically necessary dislocations (GND) associated with crystallographic anisotropy is presented. Finally, the results show that: i) line average GND density profiles, for Ti samples that possess a uniform equiaxed-grain structure, but with strong crystallographic anisotropy, exhibit significant differences in GND density close to the shear band center; ii) GND profiles decrease steadily away from the shear band as the plastic strain diminishes, in agreement with Ashby's theory of work hardening, where the higher GND density in the through-thickness (TT) orientation is a result of restricted < a > type slip in the shear band compared with in-plane (IP) samples; iii) the anisotropy in deformation response is derived from initial crystallographic texture of the materials, where GND density of < a > GNDs are higher adjacent to the shear band in the through-thickness sample oriented away from easy slip, but the density of < c+a > type GNDs are very similar in these two samples; and iv) the increase in grain average GND density was determined to have strong correlation to an increase in the Euler Φ angle of the grain average orientation, indicating an increased misorientation angle evolution.« less