Experiment to Detect Accelerating Modes in a Photonic Bandgap Fiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

England, R.J.; /SLAC; Colby, E.R.

An experimental effort is currently underway at the E-163 test beamline at Stanford Linear Accelerator Center to use a hollow-core photonic bandgap (PBG) fiber as a high-gradient laser-based accelerating structure for electron bunches. For the initial stage of this experiment, a 50pC, 60 MeV electron beam will be coupled into the fiber core and the excited modes will be detected using a spectrograph to resolve their frequency signatures in the wakefield radiation generated by the beam. They will describe the experimental plan and recent simulation studies of candidate fibers.

Application of a flexible CO(2) laser fiber for neurosurgery: laser-tissue interactions.

PubMed

Ryan, Robert W; Wolf, Tamir; Spetzler, Robert F; Coons, Stephen W; Fink, Yoel; Preul, Mark C

2010-02-01

The CO(2) laser has an excellent profile for use in neurosurgery. Its high absorption in water results in low thermal spread, sparing adjacent tissue. Use of this laser has been limited to line-of-sight applications because no solid fiber optic cables could transmit its wavelength. Flexible photonic bandgap fiber technology enables delivery of CO(2) laser energy through a flexible fiber easily manipulated in a handheld device. The authors examined and compared the first use of this CO(2) laser fiber to conventional methods for incising neural tissue. Carbon dioxide laser energy was delivered in pulsed or continuous wave settings for different power settings, exposure times, and distances to cortical tissue of 6 anesthetized swine. Effects of CO(2) energy on the tissue were compared with bipolar cautery using a standard pial incision technique, and with scalpel incisions without cautery. Tissue was processed for histological analysis (using H & E, silver staining, and glial fibrillary acidic protein immunohistochemistry) and scanning electron microscopy, and lesion measurements were made. Light microscopy and scanning electron microscopy revealed laser incisions of consistent shape, with central craters surrounded by limited zones of desiccated and edematous tissue. Increased laser power resulted in deeper but not significantly wider incisions. Bipolar cautery lesions showed desiccated and edematous zones but did not incise the pia, and width increased more than depth with higher power. Incisions made without using cautery produced hemorrhage but minimal adjacent tissue damage. The photonic bandgap fiber CO(2) laser produced reliable cortical incisions, adjustable over a range of settings, with minimal adjacent thermal tissue damage. Ease of application under the microscope suggests this laser system has reached true practicality for neurosurgery.

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.

2016-01-05

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.

2014-07-08

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.

2016-03-22

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana

Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

Buffer Layer Effects on Tandem InGaAs TPV Devices

NASA Technical Reports Server (NTRS)

Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

2004-01-01

Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of configurations both with and without buffer layers. All structures were characterized by reciprocal space x-ray diffraction to determine epilayer composition and residual strain. Electrical characterization of the devices was performed to examine the effect of the buffer on the device performance. The effect of the buffer structure depends upon where it is positioned. When near the emitter region, a 2.6x increase in dark current was measured, whereas no change in dark current was observed when it was near the base region.

Polarizing Ytterbium-Doped all-Solid Photonic Bandgap Fiber with 1150 micrometers2 Effective Mode Area

DTIC Science & Technology

2015-02-11

RESPONSIBLE PERSON 19b. TELEPHONE NUMBER Liang Dong Fanting Kong,, Guancheng Gu,, Thomas W. Hawkins ,, Joshua Parsons, Maxwell Jones,, Christopher...Dunn,, Monica T. Kalichevsky-Dong,, Benjamin Pulford,, Iyad Dajani,, Kunimasa Saitoh,, Stephen P. Palese,, Eric Cheung,, Liang Dong c. THIS PAGE The...ytterbium-doped all-solid photonic bandgap fiber with ~1150µm2 effective mode area Fanting Kong,1,* Guancheng Gu,1 Thomas W. Hawkins ,1 Joshua Parsons

Optical Spectra Tuning of All-Glass Photonic Bandgap Fiber Infiltrated with Silver Fast-Ion-Conducting Glasses.

PubMed

Konidakis, Ioannis; Pissadakis, Stavros

2014-08-07

Silver iodide metaphosphate glasses of the x AgI + (1- x )AgPO₃ family are embedded inside the air capillaries of a commercial silica photonic crystal fiber (PCF) by means of vacuum-assisted infiltration technique. In this paper, we report on tuning the photonic bandgap (PBG) guidance characteristics of the fabricated all-glass photonic bandgap fibers, by varying the composition of the fast-ion-conducting phosphate glass infiltration medium. Doping AgPO₃ metaphosphate glass with AgI significantly alters the PBG guidance patterns in the examined range between 350 and 1750 nm, as it leads to the introduction of numerous additional transmission stop-bands, while affecting scattering dependant losses. The effect of phosphate glass cooling method during sample fabrication on the transmission behavior of the x AgI + (1- x )AgPO₃/PCFs is also considered.

Investigation of germanium quantum-well light sources.

PubMed

Fei, Edward T; Chen, Xiaochi; Zang, Kai; Huo, Yijie; Shambat, Gary; Miller, Gerald; Liu, Xi; Dutt, Raj; Kamins, Theodore I; Vuckovic, Jelena; Harris, James S

2015-08-24

In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells. Electroluminescence (EL) measurements show the temperature-dependent properties of our Ge quantum-well devices, which are in good agreement with our theoretical models. We also demonstrate the PL measurements of Ge quantum-well microdisks using tapered-fiber collection method and quantify the optical loss of the Ge quantum-well structure from the measured PL spectra for the first time.

Integrated Optofluidic Multimaterial Fibers

NASA Astrophysics Data System (ADS)

Stolyarov, Alexander Mark

The creation of integrated microphotonic devices requires a challenging assembly of optically and electrically disparate materials into complex geometries with nanometer-scale precision. These challenges are typically addressed by mature wafer-based fabrication methods, which while versatile, are limited to low-aspect-ratio structures and by the inherent complexity of sequential processing steps. Multimaterial preform-to-fiber drawing methods on the other hand present unique opportunities for realizing optical and optoelectronic devices of extended length. Importantly, these methods allow for monolithic integration of all the constituent device components into complex architectures. My research has focused on addressing the challenges and opportunities associated with microfluidic multimaterial fiber structures and devices. Specifically: (1) A photonic bandgap (PBG) fiber is demonstrated for single mode transmission at 1.55 microm with 4 dB/m losses. This fiber transmits laser pulses with peak powers of 13.5 MW. (Chapter 2) (2) A microfluidic fiber laser, characterized by purely radia l emission is demonstrated. The laser cavity is formed by an axially invariant, 17-period annular PBG structure with a unit cell thickness of 160nm. This laser is distinct from traditional lasers with cylindrically symmetric emission, which rely almost exclusively on whispering gallery modes, characterized by tangential wavevectors. (Chapter 4) (3) An array of independently-controlled liquid-crystal microchannels flanked by viscous conductors is integrated in the fiber cladding and encircles the PBG laser cavity in (2). The interplay between the radially-emitting laser and these liquid-crystal modulators enables controlled directional emission around a full azimuthal angular range. (Chapter 4) (4) The electric potential profile along the length of the electrodes in (3) is characterized and found to depend on frequency. This frequency dependence presents a new means to tune the transversely-directed transmission at a given location along the fiber axis. (Chapter 5) (5) A chemical sensing system is created within a fiber. By integrating a chemiluminescent peroxide-sensing material into the hollow core of a PBG fiber, a limit-of-detection of 300 ppb for peroxide vapors is achieved. (Chapter 3)

Microfabricated bulk wave acoustic bandgap device

DOEpatents

Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, Carol

2010-06-08

A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

Microfabricated bulk wave acoustic bandgap device

DOEpatents

Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, legal representative, Carol

2010-11-23

A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

Ultralow-power four-wave mixing with Rb in a hollow-core photonic band-gap fiber.

PubMed

Londero, Pablo; Venkataraman, Vivek; Bhagwat, Amar R; Slepkov, Aaron D; Gaeta, Alexander L

2009-07-24

We demonstrate extremely efficient four-wave mixing with gains greater than 100 at microwatt pump powers and signal-to-idler conversion of 50% in Rb vapor confined to a hollow-core photonic band-gap fiber. We present a theoretical model that demonstrates such efficiency is consistent with the dimensions of the fiber and the optical depths attained. This is, to our knowledge, the largest four-wave mixing gain observed at such low total pump powers and the first demonstrated example of four-wave mixing in an alkali-metal vapor system with a large (approximately 30 MHz) ground state decoherence rate.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana

Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties, is examined.

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

NASA Astrophysics Data System (ADS)

Yan, Shi-Li; Xie, Zhi-Jian; Chen, Jian-Hao; Taniguchi, Takashi; Watanabe, Kenji

2017-03-01

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10V/nm to 0.83V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronics, thermoelectric power generation and thermal imaging.

Scanning Tunneling Optical Resonance Microscopy Developed

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.; Lau, Janis E.; Jenkins, Phillip P.; Castro, Stephanie L.; Tin, Padetha; Wilt, David M.; Pal, Anna Maria; Fahey, Stephen D.

2004-01-01

The ability to determine the in situ optoelectronic properties of semiconductor materials has become especially important as the size of device architectures has decreased and the development of complex microsystems has increased. Scanning Tunneling Optical Resonance Microscopy, or STORM, can interrogate the optical bandgap as a function of its position within a semiconductor micro-structure. This technique uses a tunable solidstate titanium-sapphire laser whose output is "chopped" using a spatial light modulator and is coupled by a fiber-optic connector to a scanning tunneling microscope in order to illuminate the tip-sample junction. The photoenhanced portion of the tunneling current is spectroscopically measured using a lock-in technique. The capabilities of this technique were verified using semiconductor microstructure calibration standards that were grown by organometallic vapor-phase epitaxy. Bandgaps characterized by STORM measurements were found to be in good agreement with the bulk values determined by transmission spectroscopy and photoluminescence and with the theoretical values that were based on x-ray diffraction results.

Design and fabrication of one-dimensional and two- dimensional photonic bandgap devices

NASA Astrophysics Data System (ADS)

Lim, Kuo-Yi

1999-10-01

One-dimensional and two-dimensional photonic bandgap devices have been designed and fabricated using III-V compound semiconductors. The one-dimensional photonic bandgap devices consist of monorail and air-bridge waveguide microcavities, while the two-dimensional photonic bandgap devices consist of light-emitting devices with enhanced extraction efficiency. Fabrication techniques such as gas source molecular beam epitaxy, direct-write electron-beam lithography, reactive ion etching and thermal oxidation of AlxGa1- xAs have been employed. The III-V thermal oxide, in particular, is used as an index confinement material, as a sacrificial material for micromechanical fabrication of the air-bridge microcavity, and in the realization of a wide-bandwidth distributed Bragg reflector. The one-dimensional photonic bandgap waveguide microcavities have been designed to operate in the wavelength regimes of 4.5 m m and 1.55 m m. The devices designed to operate in the 1.55 m m wavelength regime have been optically characterized. The transmission spectra exhibit resonances at around 1.55 m m and cavity quality factors (Q's) ranging from 136 to 334. The resonant modal volume is calculated to be about 0.056 m m3. Tunability in the resonance wavelengths has also been demonstrated by changing the size of the defect in the one-dimensional photonic crystal. The two-dimensional photonic bandgap light-emitting device consists of a In0.51Ga0.49P/In0.2Ga0.8As/In 0.51Ga0.49P quantum well emitting at 980nm with a triangular photonic lattice of holes in the top cladding layer of the quantum well. The photonic crystal prohibits the propagation of guided modes in the semiconductor, thus enhancing the extraction of light vertical to the light-emitting device. A wide-bandwidth GaAs/AlxOy distributed Bragg reflector mirror under the quantum well structure further enhances the extraction of light from the devices. The extraction efficiency of the two-dimensional photonic bandgap light-emitting device is expected to be at least 5 times that of a device without the two-dimensional photonic crystal. A photoluminescence measurement setup has been modified to optically characterize these devices. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.)

High-power picosecond pulse delivery through hollow core photonic band gap fibers

NASA Astrophysics Data System (ADS)

Michieletto, Mattia; Johansen, Mette M.; Lyngsø, Jens K.; Lægsgaard, Jesper; Bang, Ole; Alkeskjold, Thomas T.

2016-03-01

We demonstrated robust and bend insensitive fiber delivery of high power laser with diffraction limited beam quality for two different kinds of hollow core band gap fibers. The light source for this experiment consists of ytterbium-doped double clad fiber aeroGAIN-ROD-PM85 in a high power amplifier setup. It provided 22ps pulses with a maximum average power of 95W, 40MHz repetition rate at 1032nm (~2.4μJ pulse energy), with M2 <1.3. We determined the facet damage threshold for a 7-cells hollow core photonic bandgap fiber and showed up to 59W average power output for a 5 meters fiber. The damage threshold for a 19-cell hollow core photonic bandgap fiber exceeded the maximum power provided by the light source and up to 76W average output power was demonstrated for a 1m fiber. In both cases, no special attention was needed to mitigate bend sensitivity. The fibers were coiled on 8 centimeters radius spools and even lower bending radii were present. In addition, stimulated rotational Raman scattering arising from nitrogen molecules was measured through a 42m long 19 cell hollow core fiber.

Single-graded CIGS with narrow bandgap for tandem solar cells.

PubMed

Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

2018-01-01

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Single-graded CIGS with narrow bandgap for tandem solar cells

PubMed Central

Avancini, Enrico; Buecheler, Stephan; Tiwari, Ayodhya N.

2018-01-01

Abstract Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells. PMID:29707066

Ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires probed by terahertz spectroscopy

NASA Astrophysics Data System (ADS)

Liu, Hongwei; Lu, Junpeng; Yang, Zongyin; Teng, Jinghua; Ke, Lin; Zhang, Xinhai; Tong, Limin; Sow, Chorng Haur

2016-06-01

Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdSxSe1-x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices.

Efficient CsF interlayer for high and low bandgap polymer solar cell

NASA Astrophysics Data System (ADS)

Mitul, Abu Farzan; Sarker, Jith; Adhikari, Nirmal; Mohammad, Lal; Wang, Qi; Khatiwada, Devendra; Qiao, Qiquan

2018-02-01

Low bandgap polymer solar cells have a great deal of importance in flexible photovoltaic market to absorb sun light more efficiently. Efficient wide bandgap solar cells are always available in nature to absorb visible photons. The development and incorporation of infrared photovoltaics (IR PV) with wide bandgap solar cells can improve overall solar device performance. Here, we have developed an efficient low bandgap polymer solar cell with CsF as interfacial layer in regular structure. Polymer solar cell devices with CsF shows enhanced performance than Ca as interfacial layer. The power conversion efficiency of 4.5% has been obtained for PDPP3T based polymer solar cell with CsF as interlayer. Finally, an optimal thickness with CsF as interfacial layer has been found to improve the efficiency in low bandgap polymer solar cells.

A 5-mm piezo-scanning fiber device for high speed ultrafast laser microsurgery

PubMed Central

Ferhanoglu, Onur; Yildirim, Murat; Subramanian, Kaushik; Ben-Yakar, Adela

2014-01-01

Towards developing precise microsurgery tools for the clinic, we previously developed image-guided miniaturized devices using low repetition rate amplified ultrafast lasers for surgery. To improve the speed of tissue removal while reducing device diameter, here we present a new 5-mm diameter device that delivers high-repetition rate laser pulses for high speed ultrafast laser microsurgery. The device consists of an air-core photonic bandgap fiber (PBF) for the delivery of high energy pulses, a piezoelectric tube actuator for fiber scanning, and two aspheric lenses for focusing the light. Its inline optical architecture provides easy alignment and substantial size reduction to 5 mm diameter as compared to our previous MEMS-scanning devices while realizing improved intensity squared (two-photon) lateral and axial resolutions of 1.16 μm and 11.46 μm, respectively. Our study also sheds light on the maximum pulse energies that can be delivered through the air-core PBF and identifies cladding damage at the input facet of the fiber as the limiting factor. We have achieved a maximum energy delivery larger than 700 nJ at 92% coupling efficiency. An in depth analysis reveals how this value is greatly affected by possible slight misalignments of the beam during coupling and the measured small beam pointing fluctuations. In the absence of these imperfections, self-phase modulation becomes the limiting factor for the maximum energy delivery, setting the theoretical upper bound to near 2 μJ for a 1-m long, 7-μm, air-core PBF. Finally, the use of a 300 kHz repetition rate fiber laser enabled rapid ablation of 150 µm x 150 µm area within only 50 ms. Such ablation speeds can now allow the surgeons to translate the surgery device as fast as ~4 mm/s to continuously remove a thin layer of a 150 µm wide tissue. Thanks to a high optical transmission efficiency of the in-line optical architecture of the device and improved resolution, we could successfully perform ablation of scarred cheek pouch tissue, drilling through a thin slice. With further development, this device can serve as a precise and high speed ultrafast laser scalpel in the clinic. PMID:25071946

Optoelectronic oscillator incorporating hollow-core photonic bandgap fiber.

PubMed

Mutugala, U S; Kim, J; Bradley, T D; Wheeler, N V; Sandoghchi, S R; Hayes, J R; Numkam Fokoua, E; Poletti, F; Petrovich, M N; Richardson, D J; Slavík, R

2017-07-01

We demonstrate, to the best of our knowledge, the first optoelectronic oscillator that uses hollow-core photonic bandgap fiber (HC-PBGF) as a delay element of a sufficient length to allow for low-noise operation. We show experimentally that HC-PBGF can improve the temperature stability of the oscillator by a factor of more than 15, as compared to standard optical fiber. We also measured the oscillator's phase noise, allowing evaluation of the suitability of HC-PBGF for this application. Additionally, this Letter also provides, to the best of our knowledge, the first characterization of the temperature stability of a long length (>800  m in our Letter) of low-thermal sensitivity (2  ps/km/K) HC-PBGF wound on a spool.

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

PubMed Central

Wu, Kuen-Hsien; Li, Chong-Wei

2015-01-01

Porous-silicon (PS) multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si) substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS) structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells. PMID:28793542

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2012-01-20

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the widemore » bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.« less

Monitoring the Wobbe Index of Natural Gas Using Fiber-Enhanced Raman Spectroscopy.

PubMed

Sandfort, Vincenz; Trabold, Barbara M; Abdolvand, Amir; Bolwien, Carsten; Russell, Philip St. J; Wöllenstein, Jürgen; Palzer, Stefan

2017-11-24

The fast and reliable analysis of the natural gas composition requires the simultaneous quantification of numerous gaseous components. To this end, fiber-enhanced Raman spectroscopy is a powerful tool to detect most components in a single measurement using a single laser source. However, practical issues such as detection limit, gas exchange time and background Raman signals from the fiber material still pose obstacles to utilizing the scheme in real-world settings. This paper compares the performance of two types of hollow-core photonic crystal fiber (PCF), namely photonic bandgap PCF and kagomé-style PCF, and assesses their potential for online determination of the Wobbe index. In contrast to bandgap PCF, kagomé-PCF allows for reliable detection of Raman-scattered photons even below 1200 cm -1 , which in turn enables fast and comprehensive assessment of the natural gas quality of arbitrary mixtures.

Monitoring the Wobbe Index of Natural Gas Using Fiber-Enhanced Raman Spectroscopy

PubMed Central

Sandfort, Vincenz; Trabold, Barbara M.; Abdolvand, Amir; Bolwien, Carsten; Russell, Philip St. J.; Wöllenstein, Jürgen

2017-01-01

The fast and reliable analysis of the natural gas composition requires the simultaneous quantification of numerous gaseous components. To this end, fiber-enhanced Raman spectroscopy is a powerful tool to detect most components in a single measurement using a single laser source. However, practical issues such as detection limit, gas exchange time and background Raman signals from the fiber material still pose obstacles to utilizing the scheme in real-world settings. This paper compares the performance of two types of hollow-core photonic crystal fiber (PCF), namely photonic bandgap PCF and kagomé-style PCF, and assesses their potential for online determination of the Wobbe index. In contrast to bandgap PCF, kagomé-PCF allows for reliable detection of Raman-scattered photons even below 1200 cm−1, which in turn enables fast and comprehensive assessment of the natural gas quality of arbitrary mixtures. PMID:29186768

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Photovoltaic measurement of bandgap narrowing in moderately doped silicon

NASA Astrophysics Data System (ADS)

del Alamo, Jesus A.; Swanson, Richard M.; Lietoila, Arto

1983-05-01

Solar cells have been fabricated on n-type and p-type moderately doped Si. The shrinkage of the Si bandgap has been obtained by measuring the internal quantum efficiency in the near infrared spectrum ( hv = 1.00-1.25 eV) around the fundamental absorption edge. The results agree with previous optical measurements of bandgap narrowing in Si. It is postulated that this optically-determined bandgap narrowing is the rigid shrinkage of the forbidden gap due to many-body effects. The "device bandgap narrowing" obtained by measuring the pn product in bipolar devices leads to discrepant values because (i) the density of states in the conduction and valence band is modified due to the potential fluctuations originated in the variations in local impurity density, and (ii) the influence of Fermi-Dirac statistics.

Densely Aligned Graphene Nanoribbon Arrays and Bandgap Engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Justin; Chen, Changxin; Gong, Ming

Graphene has attracted great interest for future electronics due to its high mobility and high thermal conductivity. However, a two-dimensional graphene sheet behaves like a metal, lacking a bandgap needed for the key devices components such as field effect transistors (FETs) in digital electronics. It has been shown that, partly due to quantum confinement, graphene nanoribbons (GNRs) with ~2 nm width can open up sufficient bandgaps and evolve into semiconductors to exhibit high on/off ratios useful for FETs. However, a challenging problem has been that, such ultra-narrow GNRs (~2 nm) are difficult to fabricate, especially for GNRs with smooth edgesmore » throughout the ribbon length. Despite high on/off ratios, these GNRs show very low mobility and low on-state conductance due to dominant scattering effects by imperfections and disorders at the edges. Wider GNRs (>5 nm) show higher mobility, higher conductance but smaller bandgaps and low on/off ratios undesirable for FET applications. It is highly desirable to open up bandgaps in graphene or increase the bandgaps in wide GNRs to afford graphene based semiconductors for high performance (high on-state current and high on/off ratio) electronics. Large scale ordering and dense packing of such GNRs in parallel are also needed for device integration but have also been challenging thus far. It has been shown theoretically that uniaxial strains can be applied to a GNR to engineer its bandgap. The underlying physics is that under uniaxial strain, the Dirac point moves due to stretched C-C bonds, leading to an increase in the bandgap of armchair GNRs by up to 50% of its original bandgap (i.e. bandgap at zero strain). For zigzag GNRs, due to the existence of the edge states, changes of bandgap are smaller under uniaxial strain and can be increased by ~30%. This work proposes a novel approach to the fabrication of densely aligned graphene nanoribbons with highly smooth edges afforded by anisotropic etching and uniaxial strain for bandgap engineering of GNRs towards high on/off ratio and high on-state current GNR devices. First, we will develop a novel approach for the fabrication of high density GNR arrays (pitch <50 nm, tunable down to 30nm) with pre-defined edge orientation and smooth edges using a free standing nano-mask derived from diblock copolymer assembly for patterning of graphene sheets. Anisotropic graphene edges will be developed to afford smooth edges along crystallographic lattice directions. Then, we will fabricate GNR devices on flexible substrates and apply uniaxial strain to engineer the bandgap of the GNRs. The bandgap of GNRs could be increased by up to 50% under uniaxial strain according to theoretical calculations and will be investigated through electrical transport measurements. Micro-Raman spectroscopy of single GNRs and parallel arrays will be used to probe and quantify the uniaxial strain. Electrical measurements will be used to probe the on/off ratio of GNR FET devices and confirm the bandgap tuning effects. Finally, we plan to use dense parallel arrays of GNRs to demonstrate strained GNR field effect transistors with high on/off ratios and high on-state current, and compare strained GNR FETs with carbon nanotube and Si based field effect transistor (FET) devices.« less

Fabrication and characterization of an all-solid tellurite-phosphate photonic bandgap fiber.

PubMed

Cheng, Tonglei; Sakai, Yukiko; Suzuki, Takenobu; Ohishi, Yasutake

2015-05-01

We present an all-solid tellurite-phosphate photonic bandgap fiber (PBGF) with two layers of high-index rods (TeO2-Li2O-WO3-MoO3-Nb2O5, TLWMN) in the cladding (TeO2-ZnO-Li2O-K2O-Al2O3-P2O5, TZLKAP). TLWMN and TZLKAP glasses have good compatibility for fabricating the all-solid PBGF. Photonic bandgap (PBG) properties are calculated by the plane wave expansion method (PWM), and the results agree well with the measured transmission spectrum. Furthermore, the modal field patterns are measured at ∼1300 and 1520 nm, respectively. The light is confined to the core at ∼1300  nm and lost in the cladding at ∼1520  nm, which match well with the calculated modal field intensities.

Reduced thermal sensitivity of hybrid air-core photonic band-gap fiber ring resonator

NASA Astrophysics Data System (ADS)

Feng, Li-shuang; Wang, Kai; Jiao, Hong-chen; Wang, Jun-jie; Liu, Dan-ni; Yang, Zhao-hua

2018-01-01

A novel hybrid air-core photonic band-gap fiber (PBF) ring resonator with twin 90° polarization-axis rotated splices is proposed and demonstrated. Frist, we measure the temperature dependent birefringence coefficient of air-core PBF and Panda fiber. Experimental results show that the relative temperature dependent birefringence coefficient of air-core PBF is 1.42×10-8/°C, which is typically 16 times less than that of Panda fiber. Then, we extract the geometry profile of air-core PBF from scanning electron microscope (SEM) images. Numerical modal is built to distinguish the fast axis and slow axis in the fiber. By precisely setting the length difference in air-core PBF and Panda fiber between two 90° polarization-axis rotated splicing points, the hybrid air-core PBF ring resonator is constructed, and the finesse of the resonator is 8.4. Environmental birefringence variation induced by temperature change can be well compensated, and experimental results show an 18-fold reduction in thermal sensitivity, compared with resonator with twin 0° polarization-axis rotated splices.

High performance, high bandgap, lattice-mismatched, GaInP solar cells

DOEpatents

Wanlass, Mark W; Carapella, Jeffrey J; Steiner, Myles A

2016-11-01

High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

High performance, high bandgap, lattice-mismatched, GaInP solar cells

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.; Steiner, Myles A.

2014-07-08

High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

Wide Bandgap Technology Enhances Performance of Electric-Drive Vehicles |

Science.gov Websites

, WBG materials/devices enable lighter, more compact, and more efficient power electronics for vehicles, and increased electric vehicle adoption by consumers. Wide bandgap power electronics devices power electronics component size and potentially reduce system or component-level cost, while improving

Superlattice optical device

DOEpatents

Biefeld, R.M.; Fritz, I.J.; Gourley, P.L.; Osbourn, G.C.

A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices

PubMed Central

Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

2016-01-01

Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (<20 mT); however, a very large decay was observed at a high magnetic field strength (>20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices. PMID:27142285

Solid-Core Photonic Bandgap Fibers for Cladding-Pumped Raman Amplification

DTIC Science & Technology

2011-06-03

L. Leick, J. Broeng, and S. Selleri, “Single-mode analysis of Yb- doped double-cladding distributed spectral filtering photonic crystal fibers ,” Opt... fiber amplifiers are analyzed theoretically as possible candidates for power scaling. An example fiber design with a mode field diameter of 46 µm and... doped fiber laser with true single-mode output using W-type structure,” in Conference on Lasers and Electro-Optics, (Optical Society of America, 2006

Graphene nano-devices and nano-composites for structural, thermal and sensing applications

NASA Astrophysics Data System (ADS)

Yavari, Fazel

In this dissertation we have developed graphene-based nano-devices for applications in integrated circuits and gas sensors; as well as graphene-based nano-composites for applications in structures and thermal management. First, we have studied the bandgap of graphene for semiconductor applications. Graphene as a zero-bandgap material cannot be used in the semiconductor industry unless an effective method is developed to open the bandgap in this material. We have demonstrated that a bandgap of 0.206 eV can be opened in graphene by adsorption of water vapor molecules on its surface. Water molecules break the molecular symmetries of graphene resulting in a significant bandgap opening. We also illustrate that the lack of bandgap in graphene can be used to our advantage by making sensors that are able to detect low concentrations of gas molecules mixed in air. We have shown that 1-2 layers of graphene synthesized by chemical vapor deposition enables detection of trace amounts of NO 2 and NH3 in air at room temperature and atmospheric pressure. The gas species are detected by monitoring changes in electrical resistance of the graphene film due to gas adsorption. The sensor response time is inversely proportional to the gas concentration. Heating the film expels chemisorbed molecules from the graphene surface enabling reversible operation. The detection limits of ~100 parts-per-billion (ppb) for NO2 and ~500 ppb for NH3 obtained using this device are markedly superior to commercially available NO2 and NH3 detectors. This sensor is fabricated using individual graphene sheets that are exquisitely sensitive to the chemical environment. However, the fabrication and operation of devices that use individual nanostructures for sensing is complex, expensive and suffers from poor reliability due to contamination and large variability from sample-to-sample. To overcome these problems we have developed a gas sensor based on a porous 3D network of graphene sheets called graphene foam that is macroscopic and easy to mass produce. The walls of the foam are comprised of a few layers of graphene sheets resulting in high sensitivity. We demonstrate parts-per-million (ppm) level detection of NH3 and NO2 in air at room-temperature using this sensor. Further, the foam is a mechanically robust and flexible macro-scale network that is easy to contact (without lithography) and can rival the durability and affordability of traditional sensors. Moreover, Joule-heating expels chemisorbed molecules from the foam’s surface leading to fully-reversible and low-power operation. In the second part of this dissertation the focus is on graphene platelets and their incorporation into polymer matrices to improve their mechanical and thermal properties. We demonstrate the synthesis and fatigue characterization of fiberglass/epoxy composites with various weight fractions of graphene platelets infiltrated into the epoxy resin as well as directly spray-coated on to the glass micro-fibers. Remarkably, only ~0.2wt.% of graphene additives enhances the fatigue life of the composite in the flexural bending mode by up to 1200-fold. By contrast, under uniaxial tensile fatigue conditions, the graphene fillers resulted in ~3 to 5-fold increase in fatigue life. In-situ ultrasound analysis of the nanocomposite during the cyclic fatigue test suggests that the graphene network toughens the fiberglass/epoxy-matrix interface and prevents the delamination/buckling of the glass micro-fibers under compressive stress. Such fatigue-resistant hierarchical materials show potential to improve the safety, reliability, and cost-effectiveness of fiber-reinforced composites that are increasingly the material of choice in the aerospace, automotive, marine, sports, bio-medical and wind energy industries. We also investigated the effect of graphene platelets on thermal properties of Graphene/1-Octadecanol composite as a nano-structured phase change material (PCM) for energy storage applications. The liquid-solid phase change enthalpy, crystallization, and thermal conductivity of this composite were studied as a function of graphene content. The thermal conductivity (κ) of the nanocomposite increased by nearly 2.5-fold (~140% increase) upon ~4wt. % graphene addition while the drop in the heat of fusion (i.e. storage capacity) was only ~15.4%. The enhancement in thermal properties of 1-Octadecanol obtained with the addition of graphene is markedly superior to the effect of other nanofillers such as silver nanowires and carbon nanotubes reported previously in the literature. Boosting the thermal conductivity of organic PCMs without incurring a significant loss in the heat of fusion is one of the key issues in enabling their practical application as latent heat storage/release units for thermal management and thermal protection.

Phase sensitivity of fundamental mode to external atmospheric pressure for hollow-core photonic bandgap fiber

NASA Astrophysics Data System (ADS)

Xu, Xiaobin; Liu, Yangqian; Gao, Fuyu; Song, Ningfang

2018-07-01

Hollow-core photonic bandgap fibers (HC-PBFs) are suitable for spaceborne fiber optical gyroscopes owing to their excellent environmental adaptability. However, hundreds of small holes full of air at one atmosphere of pressure can make the HC-PBF sensitive to external atmospheric pressure. In this study, we investigated the phase sensitivity of the fundamental mode to external atmospheric pressure for the HC-PBF, and the experimental result indicates that the phase sensitivity is approximately 1.6 × 10-5 ppm/Pa, which is mostly contributed by the change in the pressure-induced length. Through the choice of coating, the phase sensitivity to external atmospheric pressure can be reduced by about a factor of five compared to current HC-PBFs, and the excellent temperature performance can be maintained at the same time.

Management of the high-order mode content in large (40 microm) core photonic bandgap Bragg fiber laser.

PubMed

Gaponov, D A; Février, S; Devautour, M; Roy, P; Likhachev, M E; Aleshkina, S S; Salganskii, M Y; Yashkov, M V; Guryanov, A N

2010-07-01

Very large-mode-area Yb(3+)-doped single-mode photonic bandgap (PBG) Bragg fiber oscillators are considered. The transverse hole-burning effect is numerically modeled, which helps properly design the PBG cladding and the Yb(3+)-doped region for the high-order mode content to be carefully controlled. A ratio of the Yb(3+)-doped region diameter to the overall core diameter of 40% allows for single-mode emission, even for small spool diameters of 15 cm. Such a fiber was manufactured and subsequently used as the core element of a cw oscillator. Very good beam quality parameter M(2)=1.12 and slope efficiency of 80% were measured. Insensitivity to bending, exemplified by the absence of temporal drift of the beam, was demonstrated for curvature diameter as small as 15 cm.

Importance of Schottky barriers for wide-bandgap thermoelectric devices

NASA Astrophysics Data System (ADS)

Wais, M.; Held, K.; Battiato, M.

2018-04-01

The development of thermoelectric devices faces not only the challenge of optimizing the Seebeck coefficient, the electrical and thermal conductivity of the active material, but also further bottlenecks when going from the thermoelectric material to an actual device, e.g., the dopant diffusion at the hot contact. We show that for large bandgap thermoelectrics another aspect can dramatically reduce the efficiency of the device: the formation of Schottky barriers. Understanding the effect, it can then be fixed rather cheaply by a two-metal contact solution.

Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Comfort, Everett; Lee, Ji Ung

2016-06-01

The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range.

Large Mode Area Yb-Doped Photonic Bandgap Fiber Lasers

DTIC Science & Technology

2015-02-08

was estimated to be 1 dB/m at a pump wavelength of 976 nm. Approximately 11 m of this fiber was mounted on a cold spool possessing a diameter of 53 cm...Approximately 11 m of this fiber was mounted on a cold spool possessing a diameter of 53 cm. The PBGF was pumped in a counter-propagating configuration

Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

NASA Astrophysics Data System (ADS)

Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

2009-04-01

This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

Nonlinear Optical Interactions in Semiconductors

DTIC Science & Technology

1984-10-01

TACAN Aerospace Corporation. 6 V. Coupling A. C.N.R.S., Physique du Solide et Energie Solaire We have an on-going interaction with Dr. Christian...optical fiber to the semiconductor sample and back to the analyzing electronics. The band-gap energy of the semiconductor decreases with increasing...temperature. Consequently, the absorption of light in the energy region of the band-gap changes with temperature. From the measured light absorption, the

Advanced specialty fiber designs for high power fiber lasers

NASA Astrophysics Data System (ADS)

Gu, Guancheng

The output power of fiber lasers has increased rapidly over the last decade. There are two major limiting factors, namely nonlinear effects and transverse mode instability, prohibiting the power scaling capability of fiber lasers. The nonlinear effects, originating from high optical intensity, primarily limit the peak power scaling. The mode instability, on the other hand, arises from quantum-defect driven heating, causing undesired mode coupling once the power exceeds the threshold and degradation of beam quality. The mode instability has now become the bottleneck for average output power scaling of fiber lasers. Mode area scaling is the most effective way to mitigate nonlinear effects. However, the use of large mode area may increase the tendency to support multiple modes in the core, resulting in lower mode instability threshold. Therefore, it is critical to maintain single mode operation in a large mode area fiber. Sufficient higher order mode suppression can lead to effective single-transverse-mode propagation. In this dissertation, we explore the feasibility of using specialty fiber to construct high power fiber lasers with robust single-mode output. The first type of fiber discussed is the resonantly-enhanced leakage channel fiber. Coherent reflection at the fiber outer boundary can lead to additional confinement especially for highly leaky HOM, leading to lower HOM losses than what are predicted by conventional finite element mothod mode solver considering infinite cladding. In this work, we conducted careful measurements of HOM losses in two leakage channel fibers (LCF) with circular and rounded hexagonal boundary shapes respectively. Impact on HOM losses from coiling, fiber boundary shapes and coating indexes were studied in comparison to simulations. This work demonstrates the limit of the simulation method commonly used in the large-mode-area fiber designs and the need for an improved approach. More importantly, this work also demonstrates that a deviation from circular fiber outer shape may be an effective method to mitigate HOM loss reduction from coherent reflection from fiber outer boundary. In an all-solid photonic bandgap fiber, modes are only guided due to anti-resonance of cladding photonic crystal lattice. This provides strongly mode-dependent guidance, leading to very high differential mode losses, which is essential for lasing far from the gain peak and suppression of stimulated Raman scattering. We will show that all-solid photonic bandgap fibers with effective mode area of 920microm2 can be made with excellent higher order mode suppression. We then demonstrate a 50microm-core-diameter Yb-doped all-solid photonic bandgap fiber laser. 75W output power has been generated with a diffraction-limited beam and an efficiency of 70% relative to the launched pump power. We have also experimentally confirmed that a robust single-mode regime exists near the high frequency edge of the bandgap. It is well known that incorporation of additional smaller cores in the cladding can be used to resonantly out-couple higher-order modes from a main core to suppress higher-order-mode propagation in the main core. Using a novel design with multiple coupled smaller cores in the cladding, we further scaled up the mode area and have successfully demonstrated a single-mode photonic bandgap fiber with record effective mode area of 2650microm2. Detailed numeric studies have been conducted for multiple cladding designs. For the optimal designs, the simulated minimum higher-order-mode losses are well over two orders of magnitudes higher than that of fundamental mode when expressed in dBs. We have also experimentally validated one of the designs. M 2<1.08 across the transmission band was demonstrated. Lowering quantum defect heating is another approach to mitigate mode instability. Highly-efficient high-power fiber lasers operating at wavelength below 1020nm are critical for tandem-pumping in >10kW fiber lasers to provide high pump brightness and low thermal loading. Using an ytterbium-doped-phosphosilicate double-clad leakage-channel fiber with 50microm core and 420microm cladding, we have achieved 70% optical-to-optical efficiency at 1018nm. The much larger cladding than those in previous reports demonstrates the much lower required pump brightness, a key for efficient kW operation. The demonstrated 1018nm fiber laser has ASE suppression of 41dB. This is higher than previous reports and further demonstrates the advantages of the fiber used. Limiting factors to efficiency are also systematically studied.

Luminescence in Conjugated Molecular Materials under Sub-bandgap Excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

So, Franky

2014-05-08

Light emission in semiconductors occurs when they are under optical and electrical excitation with energy larger than the bandgap energy. In some low-dimensional semiconductor heterostructure systems, this thermodynamic limit can be violated due to radiative Auger recombination (AR), a process in which the sub-bandgap energy released from a recombined electron-hole pair is transferred to a third particle leading to radiative band-to-band recombination.1 Thus far, photoluminescence up-conversion phenomenon has been observed in some low dimensional semiconductor systems, and the effect is very weak and it can only be observed at low temperatures. Recently, we discovered that efficient electroluminescence in poly[2-methoxy-5-(2’-ethylhexyloxy)-1, phenylenevinylene]more » (MEH-PPV) polymer light-emitting devices (PLEDs) at drive voltages below its bandgap voltage could be observed when a ZnO nanoparticles (NPs) electron injection layer was inserted between the polymer and the aluminum electrode. Specifically, emitted photons with energy of 2.13 eV can be detected at operating voltages as low as 1.2 V at room temperature. Based on these data, we propose that the sub-bandgap turn-on in the MEH-PPV device is due to an Auger-assisted energy up-conversion process. The significance of this discovery is three-fold. First, radiative recombination occurs at operating voltages below the thermodynamic bandgap voltage. This process can significantly reduce the device operating voltage. For example, the current density of the device with the ZnO NC layer is almost two orders of magnitude higher than that of the device without the NC layer. Second, a reactive metal is no longer needed for the cathode. Third, this electroluminescence up-conversion process can be applied to inorganic semiconductors systems as well and their operation voltages of inorganic LEDs can be reduced to about half of the bandgap energy. Based on our initial data, we propose that the sub-bandgap turn-on in MEH-PPV devices is due to Auger-assisted energy up-conversion process. Specifically, we propose that the up-conversion process is due to charge accumulation at the polymer/NPs interface. This model requires that holes should be the dominant carriers in the polymer and the polymer/ZnO NCs heterojunction should be a type II alignment. In order to determine the mechanism of the up-conversion process, we will characterize devices fabricated using polymers with different carrier transporting properties to determine whether hole accumulation at the polymer/nanocrystals is required. Likewise, we will also use NPs with different electronic structures to fabricate devices to determine how electron accumulation affects the up-conversion process. Finally, we will measure quantitatively the interface charge accumulation by electroabsorption and correlate the results with the up-conversion photoluminescence efficiency measurements under an applied electric field.« less

Improving performance of armchair graphene nanoribbon field effect transistors via boron nitride doping

NASA Astrophysics Data System (ADS)

Goharrizi, A. Yazdanpanah; Sanaeepur, M.; Sharifi, M. J.

2015-09-01

Device performance of 10 nm length armchair graphene nanoribbon field effect transistors with 1.5 nm and 4 nm width (13 and 33 atoms in width respectively) are compared in terms of Ion /Ioff , trans-conductance, and sub-threshold swing. While narrow devices suffer from edge roughness wider devices are subject to more substrate surface roughness and reduced bandgap. Boron Nitride doping is employed to compensate reduced bandgap in wider devices. Simultaneous effects of edge and substrate surface roughness are considered. Results show that in the presence of both the edge and substrate surface roughness the 4 nm wide device with boron nitride doping shows improved performance with respect to the 1.5 nm one (both of which incorporate the same bandgap AGNR as channel material). Electronic simulations are performed via NEGF method along with tight-binding Hamiltonian. Edge and surface roughness are created by means of one and two dimensional auto correlation functions respectively. Electronic characteristics are averaged over a large number of devices due to statistic nature of both the edge and surface roughness.

All-fiber gas sensor with intracavity photothermal spectroscopy.

PubMed

Zhao, Yan; Jin, Wei; Lin, Yuechuan; Yang, Fan; Ho, Hoi Lut

2018-04-01

We present an all-fiber intracavity photothermal (IC-PT) spectroscopic gas sensor with a hollow-core photonic bandgap fiber (HC-PBF) gas cell. The gas cell is placed inside a fiber-ring laser cavity to achieve higher laser light intensity in the hollow core and hence higher PT modulation signal. An experiment with a 0.62-m-long HC-PBF gas cell demonstrated a noise equivalent concentration of 176 ppb acetylene. Theoretical modeling shows that the IC-PT sensor has the potential of achieving sub-ppb (parts-per-billion) acetylene detection sensitivity.

Direct Spectroscopy in Hollow Optical with Fiber-Based Optical Frequency Combs

DTIC Science & Technology

2015-07-09

scheme is that the generation of carrier-envelope offset frequency f0 can be avoided, which reduces the system complexity . However, a high performance RF...Peterson, "Saturated absorption in acetylene and hydrogen cyanide in hollow-core photonic bandgap fibers," Opt. Express 13, 10475-10482 (2005). 56. C

Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

PubMed Central

Lee, Eunha; Benayad, Anass; Shin, Taeho; Lee, HyungIk; Ko, Dong-Su; Kim, Tae Sang; Son, Kyoung Seok; Ryu, Myungkwan; Jeon, Sanghun; Park, Gyeong-Su

2014-01-01

Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3–10 cm2/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm2/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. Here, we present electronic, optical and microstructural properties of ZnON, a composite of Zn3N2 and ZnO. Well-optimized ZnON material presents high mobility exceeding 100 cm2V−1s−1, the band-gap of 1.3 eV and nanocrystalline structure with multiphase. We found that mobility, microstructure, electronic structure, band-gap and trap properties of ZnON are varied with nitrogen concentration in ZnO. Accordingly, the performance of ZnON-based device can be adjustable to meet the requisite of both switch device and image-sensor potentials. These results demonstrate how device and material attributes of ZnON can be optimized for new device strategies in display technology and we expect the ZnON will be applicable to a wide range of imaging/display devices. PMID:24824778

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

DOE PAGES

Kaplar, R. J.; Allerman, A. A.; Armstrong, A. M.; ...

2016-12-20

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludesmore » with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.« less

Hollow fibers for compact infrared gas sensors

NASA Astrophysics Data System (ADS)

Lambrecht, A.; Hartwig, S.; Herbst, J.; Wöllenstein, J.

2008-02-01

Hollow fibers can be used for compact infrared gas sensors. The guided light is absorbed by the gas introduced into the hollow core. High sensitivity and a very small sampling volume can be achieved depending on fiber parameters i.e. attenuation, flexibility, and gas exchange rates. Different types of infrared hollow fibers including photonic bandgap fibers were characterized using quantum cascade lasers and thermal radiation sources. Obtained data are compared with available product specifications. Measurements with a compact fiber based ethanol sensor are compared with a system simulation. First results on the detection of trace amounts of the explosive material TATP using hollow fibers and QCL will be shown.

Liquid-filled hollow core microstructured polymer optical fiber.

PubMed

Cox, F M; Argyros, A; Large, M C J

2006-05-01

Guidance in a liquid core is possible with microstructured optical fibers, opening up many possibilities for chemical and biochemical fiber-optic sensing. In this work we demonstrate how the bandgaps of a hollow core microstructured polymer optical fiber scale with the refractive index of liquid introduced into the holes of the microstructure. Such a fiber is then filled with an aqueous solution of (-)-fructose, and the resulting optical rotation measured. Hence, we show that hollow core microstructured polymer optical fibers can be used for sensing, whilst also fabricating a chiral optical fiber based on material chirality, which has many applications in its own right.

A Study of Photoluminiscence and UV-Vis in Enhanced GaN Nanofibers

NASA Astrophysics Data System (ADS)

Robles-Garcia, Joshua; Melendez-Zambrana, Anamaris; Ramos, Idalia

2014-03-01

The photoluminiscence (PL) and UV-Vis properties of Gallium Nitride (GaN) nanofibers were investigated for samples fabricated with a precursor solution containing Gallium Nitrate Hydrate, Cellulose Acetate, and Urea in the solvents Dimethylacetamide (DMA) and Acetone. GaN is a wide bandgap (3.4 eV) semiconductor that can be used in a variety of applications including solid-state lighting, high power, and high frequency devices. In previous work, we produced polycrystalline GaN nanofibers with wurtzite structure, using the electrospinning method and a thermal treatment in nitrogen and ammonia at 1000C. In this research we study the addition of urea to the precursor solution to enhance the crystallinity of the fibers at lower sintering temperatures. The molar ratios of urea added to the precursor range from 0 to 1.7 M. After electrospinning the fibers were sintered in Nitrogen at 450C for 3 hours and then, under ammonia gas flow at 900C for 5 hours. X-Ray Diffraction (XRD), UV-Vis spectroscopy, and PL measurements at room temperature were used to study the structural and optical properties of the fibers during the sintering process. This work was sponsored by UPRH PREM (NSF-DMR-0934195).

Tuning the hybridization bandgap by meta-molecules with in-unit interaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Yongqiang; Li, Yunhui, E-mail: liyunhui@tongji.edu.cn; Wu, Qian

2015-09-07

In this paper, we demonstrate that the hybridization bandgap (HBG) can be tuned conveniently by deep subwavelength meta-molecules with in-unit interaction. Spontaneous-emission-cancellation-like (SEC-like) effect is realized in a meta-molecule by introducing the destructive interference of two detuned meta-atoms. The meta-atoms consisting of subwavelength zero-index-metamaterial-based resonators are side-coupled to a microstrip. Compared to conventional HBG configurations, the presence of in-unit interaction between meta-atoms provides more flexibility in tuning the bandgap properties, keeping the device volume almost unchanged. Both numerical simulations and microwave experiments confirm that the width, depth, and spectrum shape of HBG can be tuned by simply introducing SEC-like interactionmore » into the meta-molecule. Due to these features, our design may be promising to be applied in microwave or optics communications systems with strict limitation of device volume and flexible bandgap properties.« less

Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

DOEpatents

Hui, Rongqing [Lenexa, KS; Jiang, Hong-Xing [Manhattan, KS; Lin, Jing-Yu [Manhattan, KS

2008-03-18

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katahara, John K.; Hillhouse, Hugh W., E-mail: h2@uw.edu

A unified model for the direct gap absorption coefficient (band-edge and sub-bandgap) is developed that encompasses the functional forms of the Urbach, Thomas-Fermi, screened Thomas-Fermi, and Franz-Keldysh models of sub-bandgap absorption as specific cases. We combine this model of absorption with an occupation-corrected non-equilibrium Planck law for the spontaneous emission of photons to yield a model of photoluminescence (PL) with broad applicability to band-band photoluminescence from intrinsic, heavily doped, and strongly compensated semiconductors. The utility of the model is that it is amenable to full-spectrum fitting of absolute intensity PL data and yields: (1) the quasi-Fermi level splitting, (2) themore » local lattice temperature, (3) the direct bandgap, (4) the functional form of the sub-bandgap absorption, and (5) the energy broadening parameter (Urbach energy, magnitude of potential fluctuations, etc.). The accuracy of the model is demonstrated by fitting the room temperature PL spectrum of GaAs. It is then applied to Cu(In,Ga)(S,Se){sub 2} (CIGSSe) and Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) to reveal the nature of their tail states. For GaAs, the model fit is excellent, and fitted parameters match literature values for the bandgap (1.42 eV), functional form of the sub-bandgap states (purely Urbach in nature), and energy broadening parameter (Urbach energy of 9.4 meV). For CIGSSe and CZTSSe, the model fits yield quasi-Fermi leveling splittings that match well with the open circuit voltages measured on devices made from the same materials and bandgaps that match well with those extracted from EQE measurements on the devices. The power of the exponential decay of the absorption coefficient into the bandgap is found to be in the range of 1.2 to 1.6, suggesting that tunneling in the presence of local electrostatic potential fluctuations is a dominant factor contributing to the sub-bandgap absorption by either purely electrostatic (screened Thomas-Fermi) or a photon-assisted tunneling mechanism (Franz-Keldysh). A Gaussian distribution of bandgaps (local E{sub g} fluctuation) is found to be inconsistent with the data. The sub-bandgap absorption of the CZTSSe absorber is found to be larger than that for CIGSSe for materials that yield roughly equivalent photovoltaic devices (8% efficient). Further, it is shown that fitting only portions of the PL spectrum (e.g., low energy for energy broadening parameter and high energy for quasi-Fermi level splitting) may lead to significant errors for materials with substantial sub-bandgap absorption and emission.« less

Direct Bandgap Group IV Materials

DTIC Science & Technology

2016-01-21

devices. In this project, we have accomplished (a) direct bandgap group IV materials of GeSn, (b) GeSn-based planar light - emitting diode operated at near...devices of planar light emitting diode , detector and laser ” 6/12/2015 PI and Co-PI information: - Name of Principal Investigators: Prof. H. H. Cheng...IV materials of GeSn, (b) GeSn-based planar light - emitting diode operated at near infrared with direct emission, and (c) the first planar

Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

NASA Technical Reports Server (NTRS)

Triplett, G. E., Jr.; Durbin, S. M.

2004-01-01

The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

Extending Mode Areas of Single-mode All-solid Photonic Bandgap Fibers

DTIC Science & Technology

2015-04-02

T. Tunnermann, R. Iliew, F. Lederer, J. Broeng, G. Vienne, A. Petersson, and C. Jakobsen, “High-power air-clad large-mode-area photonic crystal ...Yvernault, and F. Salin, “Extended single-mode photonic crystal fiber lasers,” Opt. Express 14(7), 2715–2720 (2006). 10. L. Dong, T. Wu, H. McKay, L. Fu...progress in mode area scaling of optical fibers. One notable area is in photonic crystal fibers (PCF) [3–5, 8, 9]. The short straight PCF rods used in

Contact and Bandgap Engineering in Two Dimensional Crystal

NASA Astrophysics Data System (ADS)

Chu, Tao

At the heart of semiconductor research, bandgap is one of the key parameters for materials and determine their applications in modern technologies. For traditional bulk semiconductors, the bandgap is determined by the chemical composition and specific arrangement of the crystal lattices, and usually invariant during the device operation. Nevertheless, it is highly desirable for many optoelectronic and electronic applications to have materials with continuously tunable bandgap available. In the past decade, 2D layered materials including graphene and transition metal dichalcogenides (TMDs) have sparked interest in the scientific community, owing to their unique material properties and tremendous potential in various applications. Among many newly discovered properties that are non-existent in bulk materials, the strong in-plane bonding and weak van der Waals inter-planar interaction in these 2D layered structures leads to a widely tunable bandgap by electric field. This provides an extra knob to engineer the fundamental material properties and open a new design space for novel device operation. This thesis focuses on this field controlled dynamic bandgap and can be divided into three parts: (1) bilayer graphene is the first known 2D crystal with a bandgap can be continuously tuned by electric field. However, the electrical transport bandgaps is much smaller than both theoretical predictions and extracted bandgaps from optical measurements. In the first part of the thesis, the limiting factors of preventing achieving a large transport bandgap in bilayer graphene are investigated and different strategies to achieve a large transport bandgap are discussed, including the vertically scaling of gate oxide and patterning channel into ribbon structure. With a record large transport bandgap of ~200meV, a dual-gated semiconducting bilayer graphene P/N junction with extremely scaled gap of 20nm in-between is fabricated. A tunable local maxima feature, associated with 1D vHs DOS at the band edge of bilayer graphene, was experimentally observed in transport for the first time. (2) The bandgap of bilayer MoS2 is also predicted to be continuously tuned to zero by applying a perpendicular electric field. Here, the first experimental realization of tuning the bandgap of bilayer MoS2 by a vertical electric field is presented. An analytical approach utilizing the threshold voltages from ambipolar characteristics is employed to quantitatively extract bandgaps, which is further benchmarked by temperature dependent bandgap measurements and photoluminescence measurements. (3) Few layer graphene is employed as an example to demonstrate a novel self-aligned edge contacting scheme for layered material systems.

100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%

DOE PAGES

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.; ...

2017-08-25

Here, InGaAsP/InGaP quantum well (QW) structures are promising materials for next generation photovoltaic devices because of their tunable bandgap (1.50-1.80 eV) and being aluminum-free. However, the strain-balance limitations have previously limited light absorption in the QW region and constrained the external quantum efficiency (EQE) values beyond the In 0.49Ga 0.51P band-edge to less than 25%. In this work, we show that implementing a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing InGaAsP well resulted in more than 2x improvement in EQE values than previously reported strain balanced approaches. In addition, processing the devices with amore » rear optical reflector resulted in strong Fabry-Perot resonance oscillations and the EQE values were highly improved in the vicinity of these peaks, resulting in a short circuit current improvement of 10% relative to devices with a rear optical filter. These enhancements have resulted in an InGaAsP/InGaP superlattice solar cell with improved peak sub-bandgap EQE values exceeding 75% at 700 nm, an improvement in the short circuit current of 26% relative to standard InGaP devices, and an enhanced bandgap-voltage offset (W oc) of 0.4 V.« less

Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

NASA Astrophysics Data System (ADS)

Shoute, Gem; Afshar, Amir; Muneshwar, Triratna; Cadien, Kenneth; Barlage, Douglas

2016-02-01

Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters.

ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue

NASA Astrophysics Data System (ADS)

Pauporté, Thierry; Lupan, Oleg; Viana, Bruno; le Bahers, T.

2013-03-01

Nanowires (NWs)-based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film based devices. We have successfully prepared epitaxial n-ZnO(NW)/p-GaN heterojunctions using low temperature soft electrochemical techniques. The structures have been used in LED devices and exhibited highly interesting performances. Moreover, the bandgap of ZnO has been tuned by Cu or Cd doping at controlled atomic concentration. A result was the controlled shift of the LED emission in the visible spectral wavelength region. Using DFT computing calculations, we have also shown that the bandgap narrowing has two different origins for Zn1-xCdxO (ZnO:Cd) and ZnO:Cu. In the first case, it is due to the crystal lattice expansion, whereas in the second case Cu-3d donor and Cu-3d combined to O-2p acceptor bands appear in the bandgap which broadnesses increase with the dopant concentration. This leads to the bandgap reduction.

Comparison of CIGS solar cells made with different structures and fabrication techniques

DOE PAGES

Mansfield, Lorelle M.; Garris, Rebekah L.; Counts, Kahl D.; ...

2016-11-03

Cu(In, Ga)Se2 (CIGS)-based solar cells from six fabricators were characterized and compared. The devices had differing substrates, absorber deposition processes, buffer materials, and contact materials. The effective bandgaps of devices varied from 1.05 to 1.22 eV, with the lowest optical bandgaps occurring in those with metal-precursor absorber processes. Devices with Zn(O, S) or thin CdS buffers had quantum efficiencies above 90% down to 400 nm. Most voltages were 250-300 mV below the Shockley-Queisser limit for their bandgap. Electroluminescence intensity tracked well with the respective voltage deficits. Fill factor (FF) was as high as 95% of the maximum for each device'smore » respective current and voltage, with higher FF corresponding to lower diode quality factors (~1.3). An in-depth analysis of FF losses determined that diode quality reflected in the quality factor, voltage-dependent photocurrent, and, to a lesser extent, the parasitic resistances are the limiting factors. As a result, different absorber processes and device structures led to a range of electrical and physical characteristics, yet this investigation showed that multiple fabrication pathways could lead to high-quality and high-efficiency solar cells.« less

Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

NASA Astrophysics Data System (ADS)

Brillson, L. J.; Foster, G. M.; Cox, J.; Ruane, W. T.; Jarjour, A. B.; Gao, H.; von Wenckstern, H.; Grundmann, M.; Wang, B.; Look, D. C.; Hyland, A.; Allen, M. W.

2018-03-01

Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new techniques to characterize and begin to control these electronic states. Leading these advances have been the semiconductors ZnO, GaN, and related materials. This paper highlights the importance of native point defects in these semiconductors and describes how a complement of spatially localized surface science and spectroscopy techniques in three dimensions can characterize, image, and begin to control these electronic states at the nanoscale. A combination of characterization techniques including depth-resolved cathodoluminescence spectroscopy, surface photovoltage spectroscopy, and hyperspectral imaging can describe the nature and distribution of defects at interfaces at both bulk and nanoscale surfaces, their metal interfaces, and inside nanostructures themselves. These features as well as temperature and mechanical strain inside wide-bandgap device structures at the nanoscale can be measured even while these devices are operating. These advanced capabilities enable several new directions for describing defects at the nanoscale, showing how they contribute to device degradation, and guiding growth processes to control them.

Comparison of CIGS solar cells made with different structures and fabrication techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mansfield, Lorelle M.; Garris, Rebekah L.; Counts, Kahl D.

Cu(In, Ga)Se2 (CIGS)-based solar cells from six fabricators were characterized and compared. The devices had differing substrates, absorber deposition processes, buffer materials, and contact materials. The effective bandgaps of devices varied from 1.05 to 1.22 eV, with the lowest optical bandgaps occurring in those with metal-precursor absorber processes. Devices with Zn(O, S) or thin CdS buffers had quantum efficiencies above 90% down to 400 nm. Most voltages were 250-300 mV below the Shockley-Queisser limit for their bandgap. Electroluminescence intensity tracked well with the respective voltage deficits. Fill factor (FF) was as high as 95% of the maximum for each device'smore » respective current and voltage, with higher FF corresponding to lower diode quality factors (~1.3). An in-depth analysis of FF losses determined that diode quality reflected in the quality factor, voltage-dependent photocurrent, and, to a lesser extent, the parasitic resistances are the limiting factors. As a result, different absorber processes and device structures led to a range of electrical and physical characteristics, yet this investigation showed that multiple fabrication pathways could lead to high-quality and high-efficiency solar cells.« less

Achieving high performance polymer tandem solar cells via novel materials design

NASA Astrophysics Data System (ADS)

Dou, Letian

Organic photovoltaic (OPV) devices show great promise in low-cost, flexible, lightweight, and large-area energy-generation applications. Nonetheless, most of the materials designed today always suffer from the inherent disadvantage of not having a broad absorption range, and relatively low mobility, which limit the utilization of the full solar spectrum. Tandem solar cells provide an effective way to harvest a broader spectrum of solar radiation by combining two or more solar cells with different absorption bands. However, for polymer solar cells, the performance of tandem devices lags behind single-layer solar cells mainly due to the lack of suitable low-bandgap polymers (near-IR absorbing polymers). In this dissertation, in order to achieve high performance, we focus on design and synthesis of novel low bandgap polymers specifically for tandem solar cells. In Chapter 3, I demonstrate highly efficient single junction and tandem polymer solar cells featuring a spectrally matched low-bandgap conjugated polymer (PBDTT-DPP: bandgap, ˜1.44 eV). The polymer has a backbone based on alternating benzodithiophene and diketopyrrolopyrrole units. A single-layer device based on the polymer provides a power conversion efficiency of ˜6%. When the polymer is applied to tandem solar cells, a power conversion efficiency of 8.62% is achieved, which was the highest certified efficiency for a polymer solar cell. To further improve this material system, in Chapter 4, I show that the reduction of the bandgap and the enhancement of the charge transport properties of the low bandgap polymer PBDTT-DPP can be accomplished simultaneously by substituting the sulfur atoms on the DPP unit with selenium atoms. The newly designed polymer PBDTT-SeDPP (Eg = 1.38 eV) shows excellent photovoltaic performance in single junction devices with PCEs over 7% and photo-response up to 900 nm. Tandem polymer solar cells based on PBDTT-SeDPP are also demonstrated with a 9.5% PCE, which are more than 10% enhancement over those based on PBDTT-DPP. Finally, in Chapter 5, I demonstrate a new polymer system based on alternating dithienopyran and benzothiadiazole units with a bandgap of 1.38 eV, high mobility, deep highest occupied molecular orbital. As a result, a single-junction device shows high external quantum efficiency of >60% and spectral response that extends to 900 nm, with a power conversion efficiency of 7.9%. The polymer enables a solution processed tandem solar cell with certified 10.6% power conversion efficiency under standard reporting conditions, which is the first certified polymer solar cell efficiency over 10%.

Bandgap profiling in CIGS solar cells via valence electron energy-loss spectroscopy

NASA Astrophysics Data System (ADS)

Deitz, Julia I.; Karki, Shankar; Marsillac, Sylvain X.; Grassman, Tyler J.; McComb, David W.

2018-03-01

A robust, reproducible method for the extraction of relative bandgap trends from scanning transmission electron microscopy (STEM) based electron energy-loss spectroscopy (EELS) is described. The effectiveness of the approach is demonstrated by profiling the bandgap through a CuIn1-xGaxSe2 solar cell that possesses intentional Ga/(In + Ga) composition variation. The EELS-determined bandgap profile is compared to the nominal profile calculated from compositional data collected via STEM-based energy dispersive X-ray spectroscopy. The EELS based profile is found to closely track the calculated bandgap trends, with only a small, fixed offset difference. This method, which is particularly advantageous for relatively narrow bandgap materials and/or STEM systems with modest resolution capabilities (i.e., >100 meV), compromises absolute accuracy to provide a straightforward route for the correlation of local electronic structure trends with nanoscale chemical and physical structure/microstructure within semiconductor materials and devices.

Photo-Detection on Narrow-Bandgap High-Mobility 2D Semiconductors

NASA Astrophysics Data System (ADS)

Charnas, Adam; Qiu, Gang; Deng, Yexin; Wang, Yixiu; Du, Yuchen; Yang, Lingming; Wu, Wenzhuo; Ye, Peide

Photo-detection and energy harvesting device concepts have been demonstrated widely in 2D materials such as graphene, TMDs, and black phosphorus. In this work, we demonstrate anisotropic photo-detection achieved using devices fabricated from hydrothermally grown narrow-bandgap high-mobility 2D semiconductor. Back-gated FETs were fabricated by transferring the 2D flakes onto a Si/SiO2 substrate and depositing various metal contacts across the flakes to optimize the access resistance for optoelectronic devices. Photo-responsivity was measured and mapped by slightly biasing the devices and shining a laser spot at different locations of the device to observe and map the resulting photo-generated current. Optimization of the Schottky barrier height for both n and p at the metal-2D interfaces using asymmetric contact engineering was performed to improve device performance.

III-V aresenide-nitride semiconductor materials and devices

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

1997-01-01

III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator.

PubMed

Zhang, Shengli; Zhou, Wenhan; Ma, Yandong; Ji, Jianping; Cai, Bo; Yang, Shengyuan A; Zhu, Zhen; Chen, Zhongfang; Zeng, Haibo

2017-06-14

Highly stable antimonene, as the cousin of phosphorene from group-VA, has opened up exciting realms in the two-dimensional (2D) materials family. However, pristine antimonene is an indirect band gap semiconductor, which greatly restricts its applications for optoelectronics devices. Identifying suitable materials, both responsive to incident photons and efficient for carrier transfer, is urgently needed for ultrathin devices. Herein, by means of first-principles computations we found that it is rather feasible to realize a new class of 2D materials with a direct bandgap and high carrier mobility, namely antimonene oxides with different content of oxygen. Moreover, these tunable direct bandgaps cover a wide range from 0 to 2.28 eV, which are crucial for solar cell and photodetector applications. Especially, the antimonene oxide (18Sb-18O) is a 2D topological insulator with a sizable global bandgap of 177 meV, which has a nontrivial Z 2 topological invariant in the bulk and the topological states on the edge. Our findings not only introduce new vitality into 2D group-VA materials family and enrich available candidate materials in this field but also highlight the potential of these 2D semiconductors as appealing ultrathin materials for future flexible electronics and optoelectronics devices.

3D gate-all-around bandgap-engineered SONOS flash memory in vertical silicon pillar with metal gate

NASA Astrophysics Data System (ADS)

Oh, Jae-Sub; Yang, Seong-Dong; Lee, Sang-Youl; Kim, Young-Su; Kang, Min-Ho; Lim, Sung-Kyu; Lee, Hi-Deok; Lee, Ga-Won

2013-08-01

In this paper, a gate-all-around bandgap-engineered silicon-oxide-nitride-oxide-silicon device with a vertical silicon pillar structure and a Ti metal gate are demonstrated for a potential solution to overcome the scaling-down of flash memory device. The devices were fabricated using CMOS-compatible technology and exhibited well-behaved memory characteristics in terms of the program/erase window, retention, and endurance properties. Moreover, the integration of the Ti metal gate demonstrated a significant improvement in the erase characteristics due to the efficient suppression of the electron back tunneling through the blocking oxide.

Spectrally-engineered solar thermal photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lenert, Andrej; Bierman, David; Chan, Walker

A solar thermal photovoltaic device, and method of forming same, includes a solar absorber and a spectrally selective emitter formed on either side of a thermally conductive substrate. The solar absorber is configured to absorb incident solar radiation. The solar absorber and the spectrally selective emitter are configured with an optimized emitter-to-absorber area ratio. The solar thermal photovoltaic device also includes a photovoltaic cell in thermal communication with the spectrally selective emitter. The spectrally selective emitter is configured to permit high emittance for energies above a bandgap of the photovoltaic cell and configured to permit low emittance for energies belowmore » the bandgap.« less

Fusing Benzo[c][1,2,5]oxadiazole Unit with Thiophene for Constructing Wide-bandgap High-performance IDT-based Polymer Solar Cell Donor Material.

PubMed

Song, Xin; Fan, Meijie; Zhang, Kaili; Ding, Dakang; Chen, Weiye; Li, Yonghai; Yu, Liangmin; Sun, Mingliang; Yang, Renqiang

2018-04-01

Benzo[c][1,2,5]oxadiazole (BO) moiety is a strong electron-withdrawing unit compared to benzo[c][1,2,5]thiadiazole (BT). It is usually introduced as an acceptor to construct narrow band-gap donor-acceptor (D-A) materials. Herein, the π-extended conjugated moiety dithieno[3',2':3,4″;2,3″:5,6]benzo[1,2-c][1,2,5]oxadiazole (BOT) was adopted as the acceptor moiety to design D-A polymers. Considering the more extended π-conjugated molecular system of BOT compared to the BO unit, a narrower optical band-gap is expected for BOT-based IDT polymer (PIDT-BOT). Unexpectedly, the UV-vis absorption spectra of PIDT-BOT films display a great hypochromatic shift of about 60 nm compared to a BO-based analog (PIDT-BO). The optical band-gaps of the materials are broadened from 1.63 eV (PIDT-BO) to 2.00 eV (PIDT-BOT) accordingly. Although the range of external quantum efficiency (EQE) of PIDT-BOT-based polymer solar cell (PSC) devices is not as wide as for PIDT-BO-based devices, the EQE response intensities of the PIDT-BOT based device are evidently high. As a result, PSC devices based on PIDT-BOT reveal the best power conversion efficiency at 6.08%. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications

NASA Astrophysics Data System (ADS)

Alharbi, Salah S.; Alharbi, Saleh S.; Al-bayati, Ali M. S.; Matin, Mohammad

2017-08-01

This paper presents a high-performance dc-dc flyback converter design based on wide bandgap (WBG) semiconductor devices for photovoltaic (PV) applications. Two different power devices, a gallium nitride (GaN)-transistor and a silicon (Si)-MOSFET, are implemented individually in the flyback converter to examine their impact on converter performance. The total power loss of the converter with different power devices is analyzed for various switching frequencies. Converter efficiency is evaluated at different switching frequencies, input voltages, and output power levels. The results reveal that the converter with the GaN-transistor has lower total power loss and better efficiency compared to the converter with the conventional Si-MOSFET.

Yb- and Er-doped fiber laser Q-switched with an optically uniform, broadband WS2 saturable absorber

PubMed Central

Zhang, M.; Hu, Guohua; Hu, Guoqing; Howe, R. C. T.; Chen, L.; Zheng, Z.; Hasan, T.

2015-01-01

We demonstrate a ytterbium (Yb) and an erbium (Er)-doped fiber laser Q-switched by a solution processed, optically uniform, few-layer tungsten disulfide saturable absorber (WS2-SA). Nonlinear optical absorption of the WS2-SA in the sub-bandgap region, attributed to the edge-induced states, is characterized by 3.1% and 4.9% modulation depths with 1.38 and 3.83 MW/cm2 saturation intensities at 1030 and 1558 nm, respectively. By integrating the optically uniform WS2-SA in the Yb- and Er-doped laser cavities, we obtain self-starting Q-switched pulses with microsecond duration and kilohertz repetition rates at 1030 and 1558 nm. Our work demonstrates broadband sub-bandgap saturable absorption of a single, solution processed WS2-SA, providing new potential efficacy for WS2 in ultrafast photonic applications. PMID:26657601

Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering

NASA Astrophysics Data System (ADS)

Li, Yang; Wang, Tianmeng; Wu, Meng; Cao, Ting; Chen, Yanwen; Sankar, Raman; Ulaganathan, Rajesh K.; Chou, Fangcheng; Wetzel, Christian; Xu, Cheng-Yan; Louie, Steven G.; Shi, Su-Fei

2018-04-01

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ~239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ~154 meV/% for uniaxial tensile strain and ~140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in 2D materials. We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. The highly tunable bandgap of InSe in the infrared regime should enable a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.

Theory study on the bandgap of antimonide-based multi-element alloys

NASA Astrophysics Data System (ADS)

An, Ning; Liu, Cheng-Zhi; Fan, Cun-Bo; Dong, Xue; Song, Qing-Li

2017-05-01

In order to meet the design requirements of the high-performance antimonide-based optoelectronic devices, the spin-orbit splitting correction method for bandgaps of Sb-based multi-element alloys is proposed. Based on the analysis of band structure, a correction factor is introduced in the InxGa1-xAsySb1-y bandgaps calculation with taking into account the spin-orbit coupling sufficiently. In addition, the InxGa1-xAsySb1-y films with different compositions are grown on GaSb substrates by molecular beam epitaxy (MBE), and the corresponding bandgaps are obtained by photoluminescence (PL) to test the accuracy and reliability of this new method. The results show that the calculated values agree fairly well with the experimental results. To further verify this new method, the bandgaps of a series of experimental samples reported before are calculated. The error rate analysis reveals that the α of spin-orbit splitting correction method is decreased to 2%, almost one order of magnitude smaller than the common method. It means this new method can calculate the antimonide multi-element more accurately and has the merit of wide applicability. This work can give a reasonable interpretation for the reported results and beneficial to tailor the antimonides properties and optoelectronic devices.

A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

NASA Astrophysics Data System (ADS)

Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

2009-05-01

Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.

Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

PubMed Central

Shoute, Gem; Afshar, Amir; Muneshwar, Triratna; Cadien, Kenneth; Barlage, Douglas

2016-01-01

Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters. PMID:26842997

Waveguiding and bending modes in a plasma photonic crystal bandgap device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, B., E-mail: bwang17@stanford.edu; Cappelli, M. A.

2016-06-15

Waveguiding and bending modes are investigated in a fully tunable plasma photonic crystal. The plasma device actively controls the propagation of free space electromagnetic waves in the S to X band of the microwave spectrum. An array of discharge plasma tubes form a square crystal lattice exhibiting a well-defined bandgap, with individual active switching of the plasma elements to allow for waveguiding and bending modes to be generated dynamically. We show, through simulations and experiments, the existence of transverse electric (TE) mode waveguiding and bending modes.

Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

NASA Astrophysics Data System (ADS)

Raad, Bhagwan Ram; Nigam, Kaushal; Sharma, Dheeraj; Kondekar, P. N.

2016-06-01

This script features a study of bandgap, gate material work function and gate dielectric engineering for enhancement of DC and Analog/RF performance, reduction in the hot carriers effect (HCEs) and drain induced barrier lowering (DIBL) for better device reliability. In this concern, the use of band gap and gate material work function engineering improves the device performance in terms of the ON-state current and suppressed ambipolar behaviour with maintaining the low OFF-state current. With these advantages, the use of gate material work function engineering imposes restriction on the high frequency performance due to increment in the parasitic capacitances and also introduces the hot carrier effects. Hence, the gate dielectric engineering with bandgap and gate material work function engineering are used in this paper to overcome the cons of the gate material work function engineering by obtaining a superior performance in terms of the current driving capability, ambipolar conduction, HCEs, DIBL and high frequency parameters of the device for ultra-low power applications. Finally, the optimization of length for different work function is performed to get the best out of this.

Ultrawide bandgap pentamode metamaterials with an asymmetric double-cone outside profile

NASA Astrophysics Data System (ADS)

Chu, Yangyang; Li, Yucheng; Cai, Chengxin; Liu, Guangshuan; Wang, Zhaohong; Xu, Zhuo

2018-03-01

The band-gap characteristic is an important feature of acoustic metamaterials, which has important theoretical and practical significance in acoustic devices. Pentamode metamaterials (PMs) with phonon band-gap characteristics based on an asymmetric double-cone outside profile are presented and studied in this paper. The phonon band structures of these PMs are calculated by using the finite element method. In addition to the single-mode band-gaps, the complete 3D band-gaps are also obtained by changing the outside profile of the double-cone. Moreover, by adjusting the outside profile and the diameter of the double-cone to reduce the symmetry of the structure, the complete 3D band-gap can be widened. Further parametric analysis is presented to investigate the effect of geometrical parameters on the phonon band-gap property, the numerical simulations show that the maximum relative bandwidth is expanded by 15.14 times through reducing the symmetry of the structure. This study provides a possible way for PMs to control elastic wave propagation in the field of depressing vibration and noise, acoustic filtering and acoustic cloaking.

Sensing characteristics of long period gratings in hollow core fiber fabricated via electrode arc discharge

NASA Astrophysics Data System (ADS)

Iadicicco, Agostino; Cutolo, A.; Campopiano, Stefania

2014-05-01

This paper reports on the fabrication of Long Period Gratings (LPGs) in hollow-core air-silica photonic bandgap fibers (HC-PCFs) by using pressure assisted Electrode Arc Discharge (EAD) technique. In particular, the fabrication procedure relies on the combined use of EAD step, to locally heat the HC fiber, and of a static pressure (slightly higher than the external one) inside the fiber holes, to modify the holes. Here, the experimental fabrication of LPG prototypes with different periods and lengths are discussed. And, the sensitivity of LPGs in HC-PCF to environmental parameters such as strain, temperature and static pressure are presented and discussed.

The Role of FRET in Non-Fullerene Organic Solar Cells: Implications for Molecular Design.

PubMed

Gautam, Bhoj R; Younts, Robert; Carpenter, Joshua; Ade, Harald; Gundogdu, Kenan

2018-04-19

Non-fullerene acceptors (NFAs) have been demonstrated to be promising candidates for highly efficient organic photovoltaic (OPV) devices. The tunability of absorption characteristics of NFAs can be used to make OPVs with complementary donor-acceptor absorption to cover a broad range of the solar spectrum. However, both charge transfer from donor to acceptor moieties and energy (energy) transfer from high-bandgap to low-bandgap materials are possible in such structures. Here, we show that when charge transfer and exciton transfer processes are both present, the coexistence of excitons in both domains can cause a loss mechanism. Charge separation of excitons in a low-bandgap material is hindered due to exciton population in the larger bandgap acceptor domains. Our results further show that excitons in low-bandgap material should have a relatively long lifetime compared to the transfer time of excitons from higher bandgap material in order to contribute to the charge separation. These observations provide significant guidance for design and development of new materials in OPV applications.

Improved Sensitivity Spontaneous Raman Scattering Multi-Gas Sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buric, Michael P.; Chen, Kevin P.; Falk, Joel

2009-01-01

We report a backward-wave spontaneous-Raman multi-gas sensor employing a hollow-core photonic-bandgap-fiber to contain gasses and increase interaction length. Silica Raman noise and detection speed are reduced using a digital spatial filter and a cladding seal.

Electrical and Optical Measurements of the Bandgap Energy of a Light-Emitting Diode

ERIC Educational Resources Information Center

Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

2016-01-01

Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy E[subscript g]. In the case of…

Photocatalytic Water-Splitting Enhancement by Sub-Bandgap Photon Harvesting.

PubMed

Monguzzi, Angelo; Oertel, Amadeus; Braga, Daniele; Riedinger, Andreas; Kim, David K; Knüsel, Philippe N; Bianchi, Alberto; Mauri, Michele; Simonutti, Roberto; Norris, David J; Meinardi, Francesco

2017-11-22

Upconversion is a photon-management process especially suited to water-splitting cells that exploit wide-bandgap photocatalysts. Currently, such catalysts cannot utilize 95% of the available solar photons. We demonstrate here that the energy-conversion yield for a standard photocatalytic water-splitting device can be enhanced under solar irradiance by using a low-power upconversion system that recovers part of the unutilized incident sub-bandgap photons. The upconverter is based on a sensitized triplet-triplet annihilation mechanism (sTTA-UC) obtained in a dye-doped elastomer and boosted by a fluorescent nanocrystal/polymer composite that allows for broadband light harvesting. The complementary and tailored optical properties of these materials enable efficient upconversion at subsolar irradiance, allowing the realization of the first prototype water-splitting cell assisted by solid-state upconversion. In our proof-of concept device the increase of the performance is 3.5%, which grows to 6.3% if concentrated sunlight (10 sun) is used. Our experiments show how the sTTA-UC materials can be successfully implemented in technologically relevant devices while matching the strict requirements of clean-energy production.

Tailoring Nd3+ emission spectrum by a neodymium-doped tellurite all-solid photonic bandgap fiber

NASA Astrophysics Data System (ADS)

Tong, Hoang Tuan; Demichi, Daisuke; Suzuki, Takenobu; Ohishi, Yasutake

2018-02-01

A tellurite all-solid photonic bandgap fiber (ASPBF) whose cladding consists of 60 high-index rods arranged periodically around a central core was successfully fabricated. The diameter of high-index rod was about 5.0 μm and the distance between the center of two adjacent high-index rods was approximately 8.0 μm. The high-index rod was made of the TeO2-Li2O-WO3-MoO3-Nb2O5 (TLWMN) glass, the cladding was made of the TeO2-ZnO-Na2O-La2O3 (TZNL) glass as the background glass material and the central core was made of TZNL glass doped with 0.5 wt% of Nd2O3. A supercontinuum light from 0.6 to 2.4 μm was coupled into the core of fiber which is 2.2 cm long to measure its transmission spectrum. High transmission bands were obtained in the vicinity of 0.75 and 1.3 μm but the transmission was suppressed in the wavelength range from 1.0 to 1.06 μm. When a titanium∶Sapphire laser source at 0.75 μm was used, the emission spectrum was obtained with two peaks at 1.06 and 1.33 μm which are attributed to the 4F3/2->4I11/2 and 4F3/2->4I13/2 transitions of Nd3+ ion, respectively. The intensities of those emission peaks were compared with those obtained from a bulk glass having the same doping concentration of Nd3+. The results showed that by using tellurite ASPBF, the intensity of the 1.06-μm emission was suppressed by one-twelfth but the intensity of the 1.33-μm emission was maintained. This feature is very advantageous to filter out the 1.06-μm emission of Nd3+ ion in order to realize practical amplifier devices at 1.3 μm.

Observing Ambipolar Behavior and Bandgap Engineering of MoS2 with Transport Measurements

NASA Astrophysics Data System (ADS)

Morris, Rachael; Wilson, Cedric; Hamblin, Glen; Tsuchikawa, Ryuichi; Deshpande, Vikram V.

Molybdenum disulfide is a transition metal semiconductor with a relatively large bandgap about 1.8 eV. In MoS2\\ it is expected that the bandgap is layer dependent and changes with the application of strain. In this talk I will outline our attempt to make simple field effect transistors with thin MoS2 on flexible substrates. Our aim was to see the bandgap of MoS2 directly via transport measurements using electrolytic gating, then apply uniaxial strain to a single layer MoS2 device to see the bandgap change. This was to be one way of confirming theoretical expectations, as well as compare with experimental results already obtained through photoluminescence spectroscopy. Though we did not obtain our target result with this stage of the experiment, future experimental work is planned. I will discuss the experimental method, the challenges of obtaining data and the results we obtained.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.

Compared with their bulk counterparts, 2D materials can sustain much higher elastic strain at which optical quantities such as bandgaps and absorption spectra governing optoelectronic device performance can be modified with relative ease. Using first-principles density functional theory and quasiparticle GW calculations, we demonstrate how uniaxial tensile strain can be utilized to optimize the electronic and optical properties of transition metal dichalcogenide lateral (in-plane) heterostructures such as MoX 2/WX 2 (X = S, Se, Te). We find that these lateral-type heterostructures may facilitate efficient electron–hole separation for light detection/harvesting and preserve their type II characteristic up to 12% of uniaxialmore » strain. Based on the strain-dependent bandgap and band offset, we show that uniaxial tensile strain can significantly increase the power conversion efficiency of these lateral heterostructures. Our results suggest that these strain-engineered lateral heterostructures are promising for optimizing optoelectronic device performance by selectively tuning the energetics of the bandgap.« less

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

DOE PAGES

Li, D. L.; Ma, Q. L.; Wang, S. G.; ...

2014-12-02

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. In this paper, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δmore » 1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. Finally, in this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.« less

Lead-Free, Two-Dimensional Mixed Germanium and Tin Perovskites.

PubMed

Cheng, Pengfei; Wu, Tao; Liu, Junxue; Deng, Wei-Qiao; Han, Keli

2018-05-17

Hybrid two-dimensional (2D) organic-inorganic perovskites continue to draw increased attention in view of their outstanding performance in optoelectronic devices such as solar cells and light-emitting devices. Herein, for the first time, we report the synthesis and characterization of lead-free, 2D mixed Ge-Sn halide perovskites, (PEA) 2 Ge 1- x Sn x I 4 (where PEA = C 6 H 5 CH 2 CH 2 NH 3 + ), and demonstrate that the bandgaps decrease linearly with increasing Sn content. Most importantly, among them, (PEA) 2 Ge 0.5 Sn 0.5 I 4 possesses the smallest bandgap of 1.95 eV. Density functional theory calculations confirm that Sn substitution induces a smaller bandgap and more dispersed band structure, which are desirable characteristics of light-absorbing materials. In addition, conductivity and stability of (PEA) 2 Ge 0.5 Sn 0.5 I 4 have also been assessed.

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

PubMed Central

Li, D. L.; Ma, Q. L.; Wang, S. G.; Ward, R. C. C.; Hesjedal, T.; Zhang, X.-G.; Kohn, A.; Amsellem, E.; Yang, G.; Liu, J. L.; Jiang, J.; Wei, H. X.; Han, X. F.

2014-01-01

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices. PMID:25451163

Experimental observation of wave localization at the Dirac frequency in a two-dimensional photonic crystal microcavity.

PubMed

Hu, Lei; Xie, Kang; Hu, Zhijia; Mao, Qiuping; Xia, Jiangying; Jiang, Haiming; Zhang, Junxi; Wen, Jianxiang; Chen, Jingjing

2018-04-02

Trapping light within cavities or waveguides in photonic crystals is an effective technology in modern integrated optics. Traditionally, cavities rely on total internal reflection or a photonic bandgap to achieve field confinement. Recent investigations have examined new localized modes that occur at a Dirac frequency that is beyond any complete photonic bandgap. We design Al 2 O 3 dielectric cylinders placed on a triangular lattice in air, and change the central rod size to form a photonic crystal microcavity. It is predicted that waves can be localized at the Dirac frequency in this device without photonic bandgaps or total internal reflections. We perform a theoretical analysis of this new wave localization and verify it experimentally. This work paves the way for exploring localized defect modes at the Dirac point in the visible and infrared bands, with potential applicability to new optical devices.

Application of micro- and nanotechnologies for the fabrication of optical devices

NASA Astrophysics Data System (ADS)

Ehrfeld, Wolfgang; Bauer, Hans-Dieter

1998-03-01

The development of micro-opto-electro-mechanical systems (MOEMS) and devices no longer focuses on feasibility studies and expensive demonstrators. On the contrary, fabrication of micro-optical components is already feeding dynamic markets with a large variety of products that are more or less on the verge of inexpensive mass production. A major application area for MOEMS is, without any doubt, tele- and datacommunications, while miniature optical sensors (e.g. spectrometers and interferometers) have a growing part in many kinds of biotechnological, chemical and pharmaceutical applications. In this presentation numerous examples for optical microstructures are given that range from the field of low cost fiberoptic components to polymer waveguide elements, from fiber switches to mass-producible microlenses made of thermoplastics or glass, and from microstructured photonic bandgap materials to optical sensor tips for investigating nanostructures. It is emphasized that for realizing MOEMS very different materials have to be processed while the necessary hybrid integration demands for specific automated assembly methods. In particular, the examples given show now microtechnologies can be adapted and combined with each other to take into account the special requirements of the product.

Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

NASA Astrophysics Data System (ADS)

Limpert, Steven; Burke, Adam; Chen, I.-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

2017-10-01

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated ‘hot carriers’ before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier, an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

Suppressing 1.06- μm spontaneous emission of neodymium ions using a novel tellurite all-solid photonic bandgap fiber

NASA Astrophysics Data System (ADS)

Tong, Hoang Tuan; Demichi, Daisuke; Nagasaka, Kenshiro; Suzuki, Takenobu; Ohishi, Yasutake

2018-05-01

In order to take advantage of the 1.3- μm emission of neodymium (Nd3+) ions for many practical applications, we propose a tellurite all-solid photonic bandgap fiber (ASPBGF) to filter out the competing emission at 1.06 μm which is most prominent in the emission spectrum of Nd3+ ion. A novel Nd3+-doped tellurite ASPBGF is fabricated by using our developed tellurite glasses which have high compatibility of thermal properties and their refractive index difference is 0.096 at 1320 nm. The fiber is designed with 4 layers of high-index rods to have low confinement loss. The measured transmission spectrum of a 2.2-cm-long section of the fabricated fiber exhibits high transmission bands near 0.75 and 1.33 μm (about -20 dB and -19 dB) and a low transmission band in the vicinity of 1.06 μm which is about -27 dB. By using our fabricated Nd3+-doped tellurite ASPBGF, it is demonstrated for the first time that the 1.06- μm emission peak due to the 4F3/2→4I11/2 transition of Nd3+ ions is greatly suppressed about 12 times as compared to that obtained by using a bulk samples with the same doping concentration.

Quantum Efficiency and Bandgap Analysis for Combinatorial Photovoltaics: Sorting Activity of Cu–O Compounds in All-Oxide Device Libraries

PubMed Central

2014-01-01

All-oxide-based photovoltaics (PVs) encompass the potential for extremely low cost solar cells, provided they can obtain an order of magnitude improvement in their power conversion efficiencies. To achieve this goal, we perform a combinatorial materials study of metal oxide based light absorbers, charge transporters, junctions between them, and PV devices. Here we report the development of a combinatorial internal quantum efficiency (IQE) method. IQE measures the efficiency associated with the charge separation and collection processes, and thus is a proxy for PV activity of materials once placed into devices, discarding optical properties that cause uncontrolled light harvesting. The IQE is supported by high-throughput techniques for bandgap fitting, composition analysis, and thickness mapping, which are also crucial parameters for the combinatorial investigation cycle of photovoltaics. As a model system we use a library of 169 solar cells with a varying thickness of sprayed titanium dioxide (TiO2) as the window layer, and covarying thickness and composition of binary compounds of copper oxides (Cu–O) as the light absorber, fabricated by Pulsed Laser Deposition (PLD). The analysis on the combinatorial devices shows the correlation between compositions and bandgap, and their effect on PV activity within several device configurations. The analysis suggests that the presence of Cu4O3 plays a significant role in the PV activity of binary Cu–O compounds. PMID:24410367

The ideal chip is not enough: Issues retarding the success of wide band-gap devices

NASA Astrophysics Data System (ADS)

Kaminski, Nando

2017-04-01

Semiconductor chips made from the wide band-gap (WBG) materials silicon carbide (SiC) or gallium nitride (GaN) are already approaching the theoretical limits given by the respective materials. Unfortunately, their advantages over silicon devices cannot be fully exploited due to limitations imposed by the device packaging or the circuitry around the semiconductors. Stray inductances slow down the switching speed and increase losses, packaging materials limit the maximum temperature and the maximum useful temperature swing, and passives limit the maximum switching frequency. All these issues have to be solved or at least minimised to make WBG attractive for a wider range of applications and, consequently, to profit from the economy of scale.

Fiber optic gas detection system for health monitoring of oil-filled transformer

NASA Astrophysics Data System (ADS)

Ho, H. L.; Ju, J.; Jin, W.

2009-10-01

This paper reports the development of a fiber-optic gas detection system capable of detecting three types of dissolved fault gases in oil-filled power transformers or equipment. The system is based on absorption spectroscopy and the target gases include acetylene (C2H2), methane (CH4) and ethylene (C2H4). Low-cost multi-pass sensor heads using fiber coupled micro-optic cells are employed for which the interaction length is up to 4m. Also, reference gas cells made of photonic bandgap (PBG) fiber are implemented. The minimum detectable gas concentrations for methane, acetylene and ethylene are 5ppm, 2ppm and 50ppm respectively.

Use of flexible hollow-core CO2 laser in microsurgical resection of CNS lesions: early surgical experience.

PubMed

Killory, Brendan D; Chang, Steve W; Wait, Scott D; Spetzler, Robert F

2010-06-01

The CO2 laser has a long history in both experimental and clinical neurosurgery. However, its use over the past decade has been limited by its cumbersome design and bulky set-up of the micromanipulator. These limitations are amplified when it is used with the operating microscope. These restrictions are addressed by the Omniguide fiber, which delivers the beam through flexible hollow-core photonic bandgap mirror fibers and allows the laser to be wielded like any other surgical instrument. The attending neurosurgeon prospectively assessed the usefulness of the laser in its first 45 consecutive uses at our institution based on a scale of 1 to 5. The series included 11 cavernous malformations, 14 meningiomas, 7 ependymomas, 3 metastases, 3 astrocytomas, and 7 miscellaneous lesions. The laser was set up 91 times and used in 45 cases. The Omniguide fiber failed 5 times. No adverse events involving patients or staff were associated with laser use. The mean utility score was 3.7 +/- 0.8 (range, 2-5). The laser was most helpful in debulking fibrous lesions too tough for ultrasonic aspiration and lesions adherent to delicate neurovascular structures. The laser was not helpful with highly vascular tumors. In our early experience, the Omniguide laser was very helpful in selected cases in resecting specific types of lesions without complications; we have added the device to our neurosurgical armamentarium.

Effect of temperature on terahertz photonic and omnidirectional band gaps in one-dimensional quasi-periodic photonic crystals composed of semiconductor InSb.

PubMed

Singh, Bipin K; Pandey, Praveen C

2016-07-20

Engineering of thermally tunable terahertz photonic and omnidirectional bandgaps has been demonstrated theoretically in one-dimensional quasi-periodic photonic crystals (PCs) containing semiconductor and dielectric materials. The considered quasi-periodic structures are taken in the form of Fibonacci, Thue-Morse, and double periodic sequences. We have shown that the photonic and omnidirectional bandgaps in the quasi-periodic structures with semiconductor constituents are strongly depend on the temperature, thickness of the constituted semiconductor and dielectric material layers, and generations of the quasi-periodic sequences. It has been found that the number of photonic bandgaps increases with layer thickness and generation of the quasi-periodic sequences. Omnidirectional bandgaps in the structures have also been obtained. Results show that the bandwidths of photonic and omnidirectional bandgaps are tunable by changing the temperature and lattice parameters of the structures. The generation of quasi-periodic sequences can also change the properties of photonic and omnidirectional bandgaps remarkably. The frequency range of the photonic and omnidirectional bandgaps can be tuned by the change of temperature and layer thickness of the considered quasi-periodic structures. This work will be useful to design tunable terahertz PC devices.

Tinene: a two-dimensional Dirac material with a 72 meV band gap.

PubMed

Cai, Bo; Zhang, Shengli; Hu, Ziyu; Hu, Yonghong; Zou, Yousheng; Zeng, Haibo

2015-05-21

Dirac materials have attracted great interest for both fundamental research and electronic devices due to their unique band structures, but the usual near zero bandgap of graphene results in a poor on-off ratio in the corresponding transistors. Here, we report on tinene, monolayer gray tin, as a new two-dimensional material with both Dirac characteristics and a remarkable 72 meV bandgap based on density functional theory calculations. Compared with silicene and germanene, tinene has a similar hexagonal honeycomb monolayer structure, but it has an obviously larger buckling height (∼0.70 Å). Interestingly, such a moderate buckling structure results in phonon dispersion without appreciable imaginary modes, indicating the strong dynamic stability of tinene. Significantly, a distinct transformation is discovered from the band structure that six Dirac cones would appear at high symmetry K points in the first Brillouin zone when gray tin is thinned from the bulk to monolayer, but a bandgap as large as 72 meV is still preserved. Considering the recent successful realization of silicene and germanene with a similar structure, the predicted stable tinene with Dirac characteristics and a suitable bandgap is a possibility for the "more than Moore" materials and devices.

Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au; Jolley, G.; Umana-Membreno, G. A.

2014-08-28

Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs basedmore » on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10 nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10 nm regime.« less

Quantum junction solar cells.

PubMed

Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H

2012-09-12

Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO(2)); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.

Here, InGaAsP/InGaP quantum well (QW) structures are promising materials for next generation photovoltaic devices because of their tunable bandgap (1.50-1.80 eV) and being aluminum-free. However, the strain-balance limitations have previously limited light absorption in the QW region and constrained the external quantum efficiency (EQE) values beyond the In 0.49Ga 0.51P band-edge to less than 25%. In this work, we show that implementing a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing InGaAsP well resulted in more than 2x improvement in EQE values than previously reported strain balanced approaches. In addition, processing the devices with amore » rear optical reflector resulted in strong Fabry-Perot resonance oscillations and the EQE values were highly improved in the vicinity of these peaks, resulting in a short circuit current improvement of 10% relative to devices with a rear optical filter. These enhancements have resulted in an InGaAsP/InGaP superlattice solar cell with improved peak sub-bandgap EQE values exceeding 75% at 700 nm, an improvement in the short circuit current of 26% relative to standard InGaP devices, and an enhanced bandgap-voltage offset (W oc) of 0.4 V.« less

Periodic waves in fiber Bragg gratings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chow, K. W.; Merhasin, Ilya M.; Malomed, Boris A.

2008-02-15

We construct two families of exact periodic solutions to the standard model of fiber Bragg grating (FBG) with Kerr nonlinearity. The solutions are named ''sn'' and ''cn'' waves, according to the elliptic functions used in their analytical representation. The sn wave exists only inside the FBG's spectral bandgap, while waves of the cn type may only exist at negative frequencies ({omega}<0), both inside and outside the bandgap. In the long-wave limit, the sn and cn families recover, respectively, the ordinary gap solitons, and (unstable) antidark and dark solitons. Stability of the periodic solutions is checked by direct numerical simulations and,more » in the case of the sn family, also through the calculation of instability growth rates for small perturbations. Although, rigorously speaking, all periodic solutions are unstable, a subfamily of practically stable sn waves, with a sufficiently large spatial period and {omega}>0, is identified. However, the sn waves with {omega}<0, as well as all cn solutions, are strongly unstable.« less

Gaussian Filtering with Tapered Oil-Filled Photonic Bandgap Fibers

NASA Astrophysics Data System (ADS)

Brunetti, A. C.; Scolari, L.; Weirich, J.; Eskildsen, L.; Bellanca, G.; Bassi, P.; Bjarklev, A.

2008-10-01

A tunable Gaussian filter based on a tapered oil-filled photonic crystal fiber is demonstrated. The filter is centered at λ = 1364 nm with a bandwidth (FWHM) of 237nm. Tunability is achieved by changing the temperature of the filter. A shift of 210nm of the central wavelength has been observed by increasing the temperature from 25 °C to 100 °C. The measurements are compared to a simulated spectrum obtained by means of a vectorial Beam Propagation Method model.

Competing Photocurrent Mechanisms in Quasi-Metallic Carbon Nanotube pn Devices.

PubMed

Amer, Moh R; Chang, Shun-Wen; Cronin, Stephen B

2015-07-01

Photodetectors based on quasi-metallic carbon nanotubes exhibit unique optoelectronic properties. Due to their small bandgap, photocurrent generation is possible at room temperature. The origin of this photocurrent is investigated to determine the underlying mechanism, which can be photothermoelectric effect or photovoltaic effect, depending on the bandgap magnitude of the quasi-metallic nanotube. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

DTIC Science & Technology

2017-02-03

particularly for power electronics applications in hybrid and electric vehicles, power supplies, and photovoltaic ( PV ) inverters. Ultrawide-Bandgap...the one hand, Ga2O3-based optoelectronic devices such as solar -blind DUV photodetectors are expected to be useful for a variety of applications (e.g...system, and which are core components in aircraft, spacecraft, solar photovoltaic installations, electric vehicles, and military systems such as all

Wide bandgap matrix switcher, amplifier and oscillator

DOEpatents

Sampayan, Stephen

2016-08-16

An electronic device comprising an optical gate, an electrical input an electrical output and a wide bandgap material positioned between the electrical input and the electrical output to control an amount of current flowing between the electrical input and the electrical output in response to a stimulus received at the optical gate can be used in wideband telecommunication applications in transmission of multi-channel signals.

Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy

NASA Astrophysics Data System (ADS)

Barker, Bobby G., Jr.; Chava, Venkata Surya N.; Daniels, Kevin M.; Chandrashekhar, M. V. S.; Greytak, Andrew B.

2018-01-01

Graphene layers grown epitaxially on SiC substrates are attractive for a variety of sensing and optoelectronic applications because the graphene acts as a transparent, conductive, and chemically responsive layer that is mated to a wide-bandgap semiconductor with large breakdown voltage. Recent advances in control of epitaxial growth and doping of SiC epilayers have increased the range of electronic device architectures that are accessible with this system. In particular, a recently-introduced Schottky-emitter bipolar phototransistor (SEPT) based on an epitaxial graphene (EG) emitter grown on a p-SiC base epilayer has been found to exhibit a maximum common emitter current gain of 113 and a UV responsivity of 7.1 A W-1. The behavior of this device, formed on an n +-SiC substrate that serves as the collector, was attributed to a very large minority carrier injection efficiency at the EG/p-SiC Schottky contact. This large minority carrier injection efficiency is in turn related to the large built-in potential found at a EG/p-SiC Schottky junction. The high performance of this device makes it critically important to analyze the sub bandgap visible response of the device, which provides information on impurity states and polytype inclusions in the crystal. Here, we employ scanning photocurrent microscopy (SPCM) with sub-bandgap light as well as a variety of other techniques to clearly demonstrate a localized response based on the graphene transparent electrode and an approximately 1000-fold difference in responsivity between 365 nm and 444 nm excitation. A stacking fault propagating from the substrate/epilayer interface, assigned as a single layer of the 8H-SiC polytype within the 4H-SiC matrix, is found to locally increase the photocurrent substantially. The discovery of this polytype heterojunction opens the potential for further development of heteropolytype devices based on the SEPT architecture.

Electronically active defects in the Cu2ZnSn(Se,S)4 alloys as revealed by transient photocapacitance spectroscopy

NASA Astrophysics Data System (ADS)

Miller, D. Westley; Warren, Charles W.; Gunawan, Oki; Gokmen, Tayfun; Mitzi, David B.; Cohen, J. David

2012-10-01

Transient photocapacitance (TPC) spectra were obtained on a series of Cu2ZnSn(Se,S)4 absorber devices with varying Se:S ratios, providing bandgaps (Eg) between 1 eV and 1.5 eV. Efficiencies varied between 8.3% and 9.3% for devices with Eg ≤ 1.2 eV and were near 6.5% for devices with Eg ≥ 1.4 eV. The TPC spectra revealed a band-tail region with Urbach energies at or below 18 meV for the first group, but in the 25-30 meV range for the higher band-gap samples. A deeper defect band centered near 0.8 eV was also observed in most samples. We identified a correlation between the Urbach energies and the voltage deficit in these devices.

Devices, systems, and methods for harvesting energy and methods for forming such devices

DOEpatents

Kotter, Dale K.; Novack, Steven D.

2012-12-25

Energy harvesting devices include a substrate coupled with a photovoltaic material and a plurality of resonance elements associated with the substrate. The resonance elements are configured to collect energy in at least visible and infrared light spectra. Each resonance element is capacitively coupled with the photovoltaic material, and may be configured to resonate at a bandgap energy of the photovoltaic material. Systems include a photovoltaic material coupled with a feedpoint of a resonance element. Methods for harvesting energy include exposing a resonance element having a resonant electromagnetic radiation having a frequency between approximately 20 THz and approximately 1,000 THz, absorbing at least a portion of the electromagnetic radiation with the resonance element, and resonating the resonance element at a bandgap energy of an underlying photovoltaic material. Methods for forming an energy harvesting device include forming resonance elements on a substrate and capacitively coupling the resonance elements with a photovoltaic material.

Anomalous photovoltaic effect in organic-inorganic hybrid perovskite solar cells.

PubMed

Yuan, Yongbo; Li, Tao; Wang, Qi; Xing, Jie; Gruverman, Alexei; Huang, Jinsong

2017-03-01

Organic-inorganic hybrid perovskites (OIHPs) have been demonstrated to be highly successful photovoltaic materials yielding very-high-efficiency solar cells. We report the room temperature observation of an anomalous photovoltaic (APV) effect in lateral structure OIHP devices manifested by the device's open-circuit voltage ( V OC ) that is much larger than the bandgap of OIHPs. The persistent V OC is proportional to the electrode spacing, resembling that of ferroelectric photovoltaic devices. However, the APV effect in OIHP devices is not caused by ferroelectricity. The APV effect can be explained by the formation of tunneling junctions randomly dispersed in the polycrystalline films, which allows the accumulation of photovoltage at a macroscopic level. The formation of internal tunneling junctions as a result of ion migration is visualized with Kelvin probe force microscopy scanning. This observation points out a new avenue for the formation of large and continuously tunable V OC without being limited by the materials' bandgap.

Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices

NASA Astrophysics Data System (ADS)

Baira, Mourad; Salem, Bassem; Madhar, Niyaz Ahamad; Ilahi, Bouraoui

2018-05-01

In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in D- and L-valley. The practically exploitable emission wavelength ranges for efficient use in light emission and sensing should fulfill specific criteria imposing the electrons confined states in D-valley to be sufficiently below those in L-valley. This study shows that GeSn quantum dots offer promising opportunity towards high efficient group IV based infrared optical devices operating in the mid-IR and far-IR wavelength regions.

Effect of non-stoichiometric solution chemistry on improving the performance of wide-bandgap perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Mengjin; Kim, Dong Hoe; Yu, Yue

A high-efficiency wide-bandgap (WBG) perovskite solar cell is critical for developing perovskite-related (e.g., all-perovskite, perovskite/Si, or perovskite/Cu(In,Ga)Se 2) tandem devices. Here, we demonstrate the use of non-stoichiometric precursor chemistry with excess methylammonium halides (MAX; X = I, Br, or Cl) for preparing high-quality ~1.75-eV FA 0.83Cs 0.17Pb(I 0.6Br 0.4) 3 perovskite solar cells. Among various methylammonium halides, using excess MABr in the non-stoichiometric precursor exhibits the strongest effect on improving perovskite crystallographic properties and device characteristics without affecting the perovskite composition. In contrast, using excess MAI significantly reduces the bandgap of perovskite due to the replacement of Br with I.more » Using 40% excess MABr, we demonstrate a single-junction WBG perovskite solar cell with stabilized efficiency of 16.4%. We further demonstrate a 20.3%-efficient 4-terminal tandem device by using a 14.7%-efficient semi-transparent WBG perovskite top cell and an 18.6%-efficient unfiltered (5.6%-efficient filtered) Si bottom cell.« less

Effect of non-stoichiometric solution chemistry on improving the performance of wide-bandgap perovskite solar cells

DOE PAGES

Yang, Mengjin; Kim, Dong Hoe; Yu, Yue; ...

2017-10-02

A high-efficiency wide-bandgap (WBG) perovskite solar cell is critical for developing perovskite-related (e.g., all-perovskite, perovskite/Si, or perovskite/Cu(In,Ga)Se 2) tandem devices. Here, we demonstrate the use of non-stoichiometric precursor chemistry with excess methylammonium halides (MAX; X = I, Br, or Cl) for preparing high-quality ~1.75-eV FA 0.83Cs 0.17Pb(I 0.6Br 0.4) 3 perovskite solar cells. Among various methylammonium halides, using excess MABr in the non-stoichiometric precursor exhibits the strongest effect on improving perovskite crystallographic properties and device characteristics without affecting the perovskite composition. In contrast, using excess MAI significantly reduces the bandgap of perovskite due to the replacement of Br with I.more » Using 40% excess MABr, we demonstrate a single-junction WBG perovskite solar cell with stabilized efficiency of 16.4%. We further demonstrate a 20.3%-efficient 4-terminal tandem device by using a 14.7%-efficient semi-transparent WBG perovskite top cell and an 18.6%-efficient unfiltered (5.6%-efficient filtered) Si bottom cell.« less

Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Turkulets, Yury; Shalish, Ilan

2018-01-01

Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies mostly on simulated band structures that are hardly ever verified experimentally. Here, we present a method that experimentally evaluates bandgap, band offsets, and electric fields, in complex multi-semiconductor layered structures, and it does so simultaneously in all the layers. The method uses a modest optical photocurrent spectroscopy setup at ambient conditions. The results are analyzed using a simple model for electro-absorption. As an example, we apply the method to a typical GaN high electron mobility transistor structure. Measurements under various external electric fields allow us to experimentally construct band diagrams, not only at equilibrium but also under any other working conditions of the device. The electric fields are then used to obtain the charge carrier density and mobility in the quantum well as a function of the gate voltage over the entire range of operating conditions of the device. The principles exemplified here may serve as guidelines for the development of methods for simultaneous characterization of all the layers in complex, multi-semiconductor structures.

Growth of Bulk Wide Bandgap Semiconductor Crystals and Their Potential Applications

NASA Technical Reports Server (NTRS)

Chen, Kuo-Tong; Shi, Detang; Morgan, S. H.; Collins, W. Eugene; Burger, Arnold

1997-01-01

Developments in bulk crystal growth research for electro-optical devices in the Center for Photonic Materials and Devices since its establishment have been reviewed. Purification processes and single crystal growth systems employing physical vapor transport and Bridgman methods were assembled and used to produce high purity and superior quality wide bandgap materials such as heavy metal halides and II-VI compound semiconductors. Comprehensive material characterization techniques have been employed to reveal the optical, electrical and thermodynamic properties of crystals, and the results were used to establish improved material processing procedures. Postgrowth treatments such as passivation, oxidation, chemical etching and metal contacting during the X-ray and gamma-ray device fabrication process have also been investigated and low noise threshold with improved energy resolution has been achieved.

Open-Circuit Voltage Deficit, Radiative Sub-Bandgap States, and Prospects in Quantum Dot Solar Cells

PubMed Central

Chuang, Chia-Hao Marcus; Maurano, Andrea; Brandt, Riley E.; Hwang, Gyu Weon; Jean, Joel; Buonassisi, Tonio; Bulović, Vladimir; Bawendi, Moungi G.

2016-01-01

Quantum dot photovoltaics (QDPV) offer the potential for low-cost solar cells. To develop strategies for continued improvement in QDPVs, a better understanding of the factors that limit their performance is essential. Here, we study carrier recombination processes that limit the power conversion efficiency of PbS QDPVs. We demonstrate the presence of radiative sub-bandgap states and sub-bandgap state filling in operating devices by using photoluminescence (PL) and electroluminescence (EL) spectroscopy. These sub-bandgap states are most likely the origin of the high open-circuit-voltage (VOC) deficit and relatively limited carrier collection that have thus far been observed in QDPVs. Combining these results with our perspectives on recent progress in QDPV, we conclude that eliminating sub-bandgap states in PbS QD films has the potential to show a greater gain than may be attainable by optimization of interfaces between QDs and other materials. We suggest possible future directions that could guide the design of high-performance QDPVs. PMID:25927871

Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors

NASA Astrophysics Data System (ADS)

Dang Chien, Nguyen; Shih, Chun-Hsing; Hoa, Phu Chi; Minh, Nguyen Hong; Thi Thanh Hien, Duong; Nhung, Le Hong

2016-06-01

The two-band Kane model has been popularly used to calculate the band-to-band tunneling (BTBT) current in tunnel field-effect transistor (TFET) which is currently considered as a promising candidate for low power applications. This study theoretically clarifies the maximum electric field approximation (MEFA) of direct BTBT Kane model and evaluates its appropriateness for low bandgap semiconductors. By analysing the physical origin of each electric field term in the Kane model, it has been elucidated in the MEFA that the local electric field term must be remained while the nonlocal electric field terms are assigned by the maximum value of electric field at the tunnel junction. Mathematical investigations have showed that the MEFA is more appropriate for low bandgap semiconductors compared to high bandgap materials because of enhanced tunneling probability in low field regions. The appropriateness of the MEFA is very useful for practical uses in quickly estimating the direct BTBT current in low bandgap TFET devices.

High efficiency thin-film multiple-gap photovoltaic device

DOEpatents

Dalal, Vikram L.

1983-01-01

A photovoltaic device includes at least two solar cells made from Group IV elements or their alloys in the amorphous state mounted on a substrate. The outermost or first cell has a larger bandgap than the second cell. Various techniques are utilized to improve the efficiency of the device.

Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures

DOE PAGES

Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.; ...

2017-02-17

Compared with their bulk counterparts, 2D materials can sustain much higher elastic strain at which optical quantities such as bandgaps and absorption spectra governing optoelectronic device performance can be modified with relative ease. Using first-principles density functional theory and quasiparticle GW calculations, we demonstrate how uniaxial tensile strain can be utilized to optimize the electronic and optical properties of transition metal dichalcogenide lateral (in-plane) heterostructures such as MoX 2/WX 2 (X = S, Se, Te). We find that these lateral-type heterostructures may facilitate efficient electron–hole separation for light detection/harvesting and preserve their type II characteristic up to 12% of uniaxialmore » strain. Based on the strain-dependent bandgap and band offset, we show that uniaxial tensile strain can significantly increase the power conversion efficiency of these lateral heterostructures. Our results suggest that these strain-engineered lateral heterostructures are promising for optimizing optoelectronic device performance by selectively tuning the energetics of the bandgap.« less

Non-Optical Applications of Photonic Crystal Structures

DTIC Science & Technology

2005-02-23

antenna created by covering a metallic ground plane with a periodic band-gap structure. By incorporating varactor diodes into the structure, they have...defects can be created in alumina band-gap materials by use of laser machining. (a) 1ncalizcd A 1II Cavity Fig 10 - (a) Schematics of propagation of...The primary applications are in dentistry and dermatology . The scale length of Terahertz devices simplifies the problems of fabrication and

Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications

NASA Astrophysics Data System (ADS)

Trybus, Elaissa

The objective of the proposed research is to establish the technology for material growth by molecular beam epitaxy (MBE) and fabrication of indium gallium nitride/gallium nitride (InxGa1-xN/GaN) heterojunction solar cells. InxGa1-xN solar cells have the potential to span 90% of the solar spectrum, however there has been no success with high indium (In) incorporation and only limited success with low In incorporation InxGa1-xN. Therefore, this present work focuses on 15--30% In incorporation leading to a bandgap value of 2.3--2.8 eV. This work will exploit the revision of the indium nitride (InN) bandgap value of 0.68 eV, which expands the range of the optical emission of nitride-based devices from ultraviolet to near infrared regions, by developing transparent In xGa1-xN solar cells outside the visible spectrum. Photovoltaic devices with a bandgap greater than 2.0 eV are attractive because over half the available power in the solar spectrum is above the photon energy of 2.0 eV. The ability of InxGa1-xN materials to optimally span the solar spectrum offers a tantalizing solution for high-efficiency photovoltaics. This work presents results confirming the revised bandgap of InN grown on germanium (Ge) substrates and the effects of oxygen contamination on the bandgap. This research adds to the historical discussion of the bandgap value of InN. Using the metal modulated epitaxy (MME) technique in a new, ultra-clean refurbished MBE system, an innovative growth regime is established where In and Ga phase separation is diminished by increasing the growth rate for In xGa1-xN. The MME technique modulates the metal shutters with a fixed duty cycle while maintaining a constant nitrogen flux and proves effective for improving crystal quality and p-type doping. InxGa 1-xN/GaN heterojunction solar cells require p-type doping to create the p-n subcell collecting junction, which facilitates current collection through the electrostatic field created by spatially separated ionized donors and acceptors. Magnesium (Mg) has been proven to be the most successful p-type dopant. We demonstrate the ability to repeatedly grow high hole concentration Mg-doped GaN films using the MME technique. The highest hole concentration obtained is equal to 4.26 x 1019 cm-3, resistivity of 0.5 O-cm, and mobility of 0.28 cm2/V-s. We have achieved hole concentrations significantly higher than recorded in the literature, proving that our growth parameters and the MME technique is feasible, repeatable, and beneficial to p-GaN devices. The solar cell structures were modeled with software, to design an optimal heterojunction solar cell. Using the modeling results and optimized growth parameters, four solar cell devices were grown, fabricated, and underwent extensive device testing. The device testing determined that there was no photovoltaic response from the devices, resulting from the lack of high doping in the p-GaN emitter.

Fiber-optic technologies in laser-based therapeutics: threads for a cure.

PubMed

Wang, Zheng; Chocat, Noémie

2010-06-01

In the past decade, novel fiber structures and material compositions have led to the introduction of new diagnostic and therapeutic tools. We review the structure, the material composition and the fabrication processes behind these novel fiber systems. Because of their structural flexibility, their compatibility with endoscopic appliances and their efficiency in laser delivery, these fiber systems have greatly extended the reach of a wide range of surgical lasers in minimally invasive procedures. Much research in novel fiber-optics delivery systems has been focused on the accommodation of higher optical powers and the extension to a broader wavelength range. Until recently, CO2 laser surgery, renowned for its precision and efficiency, was limited to open surgeries by the lack of delivery fibers. Hollow-core photonic bandgap fibers are assessed for their ability to transmit CO2 laser at surgical power level and for their applications in a range of clinical areas. Current fiber-delivery technologies for a number of laser surgery modalities and wavelengths are compared.

New way of polymer design for organic solar cells using the quinoid structure

NASA Astrophysics Data System (ADS)

Berube, Nicolas; Gaudreau, Josiane; Cote, Michel

2013-03-01

Research in organic photovoltaic applications are receiving a great interest as they offer an environmentally clean and low-cost solution to the world's rising energy needs. Controlling the device's active polymer optical bandgap is an important step that affects its absorption of the solar spectrum, and ultimately, its power conversion efficiency. The use of fused heterocycles that favors the polymer's quinoid structure has been a known method to lower the bandgap, for example, with isothianapthene, but there is a lack of quantifiable data on this effect. Density functional theory (DFT) calculations were done on over 60 polymers with bandgaps between 0.5 eV and 4 eV. They clearly show that low bandgaps are observed in copolymers that carefully stands between their quinoid and aromatic structures. Such balance can be obtained by mixing monomer units with quinoid characteristics with aromatic ones. Time-dependant DFT results also links low bandgaps with lower reorganization energy, which means that polymers with this structural form could possess higher charge mobilities. This link between the geometrical structure and the bandgap is compatible with a vast variety of polymers and is more convincing than the commonly used donor-acceptor method of polymer design.

Non-leaky modes and bandgaps of surface acoustic waves in wrinkled stiff-film/compliant-substrate bilayers

NASA Astrophysics Data System (ADS)

Li, Guo-Yang; Xu, Guoqiang; Zheng, Yang; Cao, Yanping

2018-03-01

Surface acoustic wave (SAW) devices have found a wide variety of technical applications, including SAW filters, SAW resonators, microfluidic actuators, biosensors, flow measurement devices, and seismic wave shields. Stretchable/flexible electronic devices, such as sensory skins for robotics, structural health monitors, and wearable communication devices, have received considerable attention across different disciplines. Flexible SAW devices are essential building blocks for these applications, wherein piezoelectric films may need to be integrated with the compliant substrates. When piezoelectric films are much stiffer than soft substrates, SAWs are usually leaky and the devices incorporating them suffer from acoustic losses. In this study, the propagation of SAWs in a wrinkled bilayer system is investigated, and our analysis shows that non-leaky modes can be achieved by engineering stress patterns through surface wrinkles in the system. Our analysis also uncovers intriguing bandgaps (BGs) related to the SAWs in a wrinkled bilayer system; these are caused by periodic deformation patterns, which indicate that diverse wrinkling patterns could be used as metasurfaces for controlling the propagation of SAWs.

Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

NASA Astrophysics Data System (ADS)

Wijewarnasuriya, Priyalal S.

2016-05-01

Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

Development of high-bandgap AlGaInP solar cells grown by organometallic vapor-phase epitaxy

DOE PAGES

Perl, Emmett E.; Simon, John; Geisz, John F.; ...

2016-03-29

AlGaInP solar cells with bandgaps between 1.9 and 2.2 eV are investigated for use in next-generation multijunction photovoltaic devices. This quaternary alloy is of great importance to the development of III-V solar cells with five or more junctions and for cells optimized for operation at elevated temperatures because of the high bandgaps required in these designs. In this work, we explore the conditions for the organometallic vapor-phase epitaxy growth of AlGaInP and study their effects on cell performance. Initial efforts focused on developing ~2.0-eV AlGaInP solar cells with a nominal aluminum composition of 12%. Under the direct spectrum at 1000more » W/m 2 (AM1.5D), the best of these samples had an open-circuit voltage of 1.59 V, a bandgap-voltage offset of 440 mV, a fill factor of 88.0%, and an efficiency of 14.8%. We then varied the aluminum composition of the alloy from 0% to 24% and were able to tune the bandgap of the AlGaInP layers from ~1.9 to ~2.2 eV. Furthermore, while the samples with a higher aluminum composition exhibited a reduced quantum efficiency and increased bandgap-voltage offset, the bandgap-voltage offset remained at 500 mV or less, up to a bandgap of ~2.1 eV.« less

Effect of multilayer structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide.

PubMed

Chen, Xianping; Tan, Chunjian; Yang, Qun; Meng, Ruishen; Liang, Qiuhua; Jiang, Junke; Sun, Xiang; Yang, D Q; Ren, Tianling

2016-06-28

Development of nanoelectronics requires two-dimensional (2D) systems with both direct-bandgap and tunable electronic properties as they act in response to the external electric field (E-field). Here, we present a detailed theoretical investigation to predict the effect of atomic structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide (BP). We demonstrate that the splitting of bands and bandgap of BP depends on the number of layers and the stacking order. The values for the bandgap show a monotonically decreasing relationship with increasing layer number. We also show that AB-stacking BP has a direct-bandgap, while ABA-stacking BP has an indirect-bandgap when the number of layers n > 2. In addition, for a bilayer and a trilayer, the bandgap increases (decreases) as the electric field increases along the positive direction of the external electric field (E-field) (negative direction). In the case of four-layer BP, the bandgap exhibits a nonlinearly decreasing behavior as the increase in the electric field is independent of the electric field direction. The tunable mechanism of the bandgap can be attributed to a giant Stark effect. Interestingly, the investigation also shows that a semiconductor-to-metal transition may occur for the four-layer case or more layers beyond the critical electric field. Our findings may inspire more efforts in fabricating new nanoelectronics devices based on few-layer BP.

Engineering electrical properties of graphene: chemical approaches

NASA Astrophysics Data System (ADS)

Kim, Yong-Jin; Kim, Yuna; Novoselov, Konstantin; Hong, Byung Hee

2015-12-01

To ensure the high performance of graphene-based devices, it is necessary to engineer the electrical properties of graphene with enhanced conductivity, controlled work function, opened or closed bandgaps, etc. This can be performed by various non-covalent chemical approaches, including molecular adsorption, substrate-induced doping, polymerization on graphene, deposition of metallic thin films or nanoparticles, etc. In addition, covalent approaches such as the substitution of carbon atoms with boron or nitrogen and the functionalization with hydrogen or fluorine are useful to tune the bandgaps more efficiently, with better uniformity and stability. In this review, representative examples of chemically engineered graphene and its device applications will be reviewed, and remaining challenges will be discussed.

Investigation of the Optical, Electronic, and Structural Properties of Fiber Optic Glasses

DTIC Science & Technology

1993-06-01

H. Kawarada, and A. Hiraki , Proc. of MRS: Symp. in Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors, eds. J.F. Glass...vacancy emission. This ,5Y. Yokota, H. Kawarada, and A. Hiraki , in Diamond, Boron Ni- observation is in accord with the interpretation of the tride

Nanometer-scale surface potential and resistance mapping of wide-bandgap Cu(In,Ga)Se2 thin films

NASA Astrophysics Data System (ADS)

Jiang, C.-S.; Contreras, M. A.; Mansfield, L. M.; Moutinho, H. R.; Egaas, B.; Ramanathan, K.; Al-Jassim, M. M.

2015-01-01

We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se2 photovoltaic thin films using the nano-electrical probes of scanning Kelvin probe force microscopy and scanning spreading resistance microscopy. With increasing bandgap, the potential imaging shows significant increases in both the large potential features due to extended defects or defect aggregations and the potential fluctuation due to unresolvable point defects with single or a few charges. The resistance imaging shows increases in both overall resistance and resistance nonuniformity due to defects in the subsurface region. These defects are expected to affect open-circuit voltage after the surfaces are turned to junction upon device completion.

Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu2 BaSn(S,Se)4 Absorber.

PubMed

Shin, Donghyeop; Zhu, Tong; Huang, Xuan; Gunawan, Oki; Blum, Volker; Mitzi, David B

2017-06-01

In recent years, Cu 2 ZnSn(S,Se) 4 (CZTSSe) materials have enabled important progress in associated thin-film photovoltaic (PV) technology, while avoiding scarce and/or toxic metals; however, cationic disorder and associated band tailing fundamentally limit device performance. Cu 2 BaSnS 4 (CBTS) has recently been proposed as a prospective alternative large bandgap (~2 eV), environmentally friendly PV material, with ~2% power conversion efficiency (PCE) already demonstrated in corresponding devices. In this study, a two-step process (i.e., precursor sputter deposition followed by successive sulfurization/selenization) yields high-quality nominally pinhole-free films with large (>1 µm) grains of selenium-incorporated (x = 3) Cu 2 BaSnS 4- x Se x (CBTSSe) for high-efficiency PV devices. By incorporating Se in the sulfide film, absorber layers with 1.55 eV bandgap, ideal for single-junction PV, have been achieved within the CBTSSe trigonal structural family. The abrupt transition in quantum efficiency data for wavelengths above the absorption edge, coupled with a strong sharp photoluminescence feature, confirms the relative absence of band tailing in CBTSSe compared to CZTSSe. For the first time, by combining bandgap tuning with an air-annealing step, a CBTSSe-based PV device with 5.2% PCE (total area 0.425 cm 2 ) is reported, >2.5× better than the previous champion pure sulfide device. These results suggest substantial promise for the emerging Se-rich Cu 2 BaSnS 4- x Se x family for high-efficiency and earth-abundant PV. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Theoretical investigation and optimization of fiber grating based slow light

NASA Astrophysics Data System (ADS)

Wang, Qi; Wang, Peng; Du, Chao; Li, Jin; Hu, Haifeng; Zhao, Yong

2017-07-01

On the edge of bandgap in a fiber grating, narrow peaks of high transimittivity exist at frequencies where light interferes constructively in the forward direction. In the vicinity of these transmittivity peaks, light reflects back and forth numerous times across the periodic structure and experiences a large group delay. In order to generate the extremely slow light in fiber grating for applications, in this research, the common sense of formation mechanism of slow light in fiber grating was introduced. The means of producing and operating fiber grating was studied to support structural slow light with a group index that can be in principle as high as several thousand. The simulations proceeded by transfer matrix method in the paper were presented to elucidate how the fiber grating parameters effect group refractive index. The main parameters that need to be optimized include grating length, refractive index contrast, grating period, loss coefficient, chirp and apodization functions, those can influence fiber grating characteristics.

Novel splice techniques and micro-hole collapse effect in photonic crystal fibers

NASA Astrophysics Data System (ADS)

Xiao, Limin

Photonic crystal fibers (PCFs) represent one of the most active research areas today in the field of fiber optics. Because of the freedom they offer in their design and novel wave-guiding properties, PCFs have resulted in a number of applications that are difficult to achieve with conventional fibers. In practical applications, low-loss connection PCFs with conventional fibers is a key issue for integrating PCF devices into existing fiber optic systems. However, connecting PCFs to conventional fibers without incurring too much loss is a very challenging problem. Two novel techniques were proposed to solve this problem in the thesis. One is fusion splicing technique; the other is micro-tip technique. First, fusion splicing technique for PCFs is investigated. For fusion splicing SMFs and PCFs having similar mode field diameters, a low-loss joint with good mechanical strength can be formed by choosing a suitably weak fusion current, short fusion time, offset and overlap to minimize the collapse of air holes and well melt two fibers together. For small-core PCFs, an optimum mode field match and an adiabatic mode field variation can be achieved by repeated arc discharges. Low-loss fusion splicing of five different PCFs with SMFs are achieved, including large mode PCF, hollow-core PCF, nonlinear PCFs with low and high air-filling fraction and polarization maintaining PCF. The other novel technique is using micro-tips. The method is based on growing photopolymer micro-tips directly on the end face of SMFs. The shape and the size of the tips can be controlled, by adjusting the laser power, the exposure time and the oxygen diffusion concentration for polymerization, to match its mode field to the small-core PCFs. Micro-hole collapse effect can be used to fabricate selective injection PCFs. The suitable arc discharge energy can cause the cladding holes to collapse while leaving the central hollow core to remain open. Thus a simple method for selective filling the central hole of PCFs is developed. Hybrid PCF guides light by a novel guiding mechanism, which is a combination of index-guiding and bandgap-guiding. The properties of the hybrid PCF are systematically investigated.

Field Performance versus Standard Test Condition Efficiency of Tandem Solar Cells and the Singular Case of Perovskites/Silicon Devices.

PubMed

Dupré, Olivier; Niesen, Bjoern; De Wolf, Stefaan; Ballif, Christophe

2018-01-18

Multijunction cells may offer a cost-effective route to boost the efficiency of industrial photovoltaics. For any technology to be deployed in the field, its performance under actual operating conditions is extremely important. In this perspective, we evaluate the impact of spectrum, light intensity, and module temperature variations on the efficiency of tandem devices with crystalline silicon bottom cells with a particular focus on perovskite top cells. We consider devices with different efficiencies and calculate their energy yields using field data from Denver. We find that annual losses due to differences between operating conditions and standard test conditions are similar for single-junction and four-terminal tandem devices. The additional loss for the two-terminal tandem configuration caused by current mismatch reduces its performance ratio by only 1.7% when an optimal top cell bandgap is used. Additionally, the unusual bandgap temperature dependence of perovskites is shown to have a positive, compensating effect on current mismatch.

Large bandgap reduced graphene oxide (rGO) based n-p + heterojunction photodetector with improved NIR performance

NASA Astrophysics Data System (ADS)

Singh, Manjri; Kumar, Gaurav; Prakash, Nisha; Khanna, Suraj P.; Pal, Prabir; Singh, Surinder P.

2018-04-01

Integration of two-dimensional reduced graphene oxide (rGO) with conventional Si semiconductor offers novel strategies for realizing broadband photodiode with enhanced device performance. In this quest, we have synthesized large bandgap rGO and fabricated metal-free broadband (300–1100 nm) back-to-back connected np-pn hybrid photodetector utilizing drop casted n-rGO/p +-Si heterojunctions with high performance in NIR region (830 nm). With controlled illumination, the device exhibited a peak responsivity of 16.7 A W‑1 and peak detectivity of 2.56 × 1012 Jones under 830 nm illumination (11 μW cm‑2) at 1 V applied bias with fast response (∼460 μs) and recovery time (∼446 μs). The fabricated device demonstrated excellent repeatability, durability and photoswitching behavior with high external quantum efficiency (∼2.5 × 103%), along with ultrasensitive behavior at low light conditions.

Multiple-exciton generation in lead selenide nanorod solar cells with external quantum efficiencies exceeding 120%

PubMed Central

Davis, Nathaniel J. L. K.; Böhm, Marcus L.; Tabachnyk, Maxim; Wisnivesky-Rocca-Rivarola, Florencia; Jellicoe, Tom C.; Ducati, Caterina; Ehrler, Bruno; Greenham, Neil C.

2015-01-01

Multiple-exciton generation—a process in which multiple charge-carrier pairs are generated from a single optical excitation—is a promising way to improve the photocurrent in photovoltaic devices and offers the potential to break the Shockley–Queisser limit. One-dimensional nanostructures, for example nanorods, have been shown spectroscopically to display increased multiple exciton generation efficiencies compared with their zero-dimensional analogues. Here we present solar cells fabricated from PbSe nanorods of three different bandgaps. All three devices showed external quantum efficiencies exceeding 100% and we report a maximum external quantum efficiency of 122% for cells consisting of the smallest bandgap nanorods. We estimate internal quantum efficiencies to exceed 150% at relatively low energies compared with other multiple exciton generation systems, and this demonstrates the potential for substantial improvements in device performance due to multiple exciton generation. PMID:26411283

Anomalous photovoltaic effect in organic-inorganic hybrid perovskite solar cells

PubMed Central

Yuan, Yongbo; Li, Tao; Wang, Qi; Xing, Jie; Gruverman, Alexei; Huang, Jinsong

2017-01-01

Organic-inorganic hybrid perovskites (OIHPs) have been demonstrated to be highly successful photovoltaic materials yielding very-high-efficiency solar cells. We report the room temperature observation of an anomalous photovoltaic (APV) effect in lateral structure OIHP devices manifested by the device’s open-circuit voltage (VOC) that is much larger than the bandgap of OIHPs. The persistent VOC is proportional to the electrode spacing, resembling that of ferroelectric photovoltaic devices. However, the APV effect in OIHP devices is not caused by ferroelectricity. The APV effect can be explained by the formation of tunneling junctions randomly dispersed in the polycrystalline films, which allows the accumulation of photovoltage at a macroscopic level. The formation of internal tunneling junctions as a result of ion migration is visualized with Kelvin probe force microscopy scanning. This observation points out a new avenue for the formation of large and continuously tunable VOC without being limited by the materials’ bandgap. PMID:28345043

Numerical study on characteristic of two-dimensional metal/dielectric photonic crystals

NASA Astrophysics Data System (ADS)

Zong, Yi-Xin; Xia, Jian-Bai; Wu, Hai-Bin

2017-04-01

An improved plan-wave expansion method is adopted to theoretically study the photonic band diagrams of two-dimensional (2D) metal/dielectric photonic crystals. Based on the photonic band structures, the dependence of flat bands and photonic bandgaps on two parameters (dielectric constant and filling factor) are investigated for two types of 2D metal/dielectric (M/D) photonic crystals, hole and cylinder photonic crystals. The simulation results show that band structures are affected greatly by these two parameters. Flat bands and bandgaps can be easily obtained by tuning these parameters and the bandgap width may reach to the maximum at certain parameters. It is worth noting that the hole-type photonic crystals show more bandgaps than the corresponding cylinder ones, and the frequency ranges of bandgaps also depend strongly on these parameters. Besides, the photonic crystals containing metallic medium can obtain more modulation of photonic bands, band gaps, and large effective refractive index, etc. than the dielectric/dielectric ones. According to the numerical results, the needs of optical devices for flat bands and bandgaps can be met by selecting the suitable geometry and material parameters. Project supported by the National Basic Research Program of China (Grant No. 2011CB922200) and the National Natural Science Foundation of China (Grant No. 605210010).

Anisotropic visible photoluminescence from thermally annealed few-layer black phosphorus.

PubMed

Zhao, Chuan; Sekhar, M Chandra; Lu, Wei; Zhang, Chenglong; Lai, Jiawei; Jia, Shuang; Sun, Dong

2018-06-15

Black phosphorus, a two-dimensional material, with high carrier mobility, tunable direct bandgap and anisotropic electronic properties has attracted enormous research interest towards potential application in electronic, optoelectronic and optomechanical devices. The bandgap of BP is thickness dependent, ranging from 0.3 eV for bulk to 1.3 eV for monolayer, while lacking in the visible region, a widely used optical regime for practical optoelectronic applications. In this work, photoluminescence (PL) centered at 605 nm is observed from the thermally annealed BP with thickness ≤20 nm. This higher energy PL is most likely the consequence of the formation of higher bandgap phosphorene oxides and suboxides on the surface BP layers as a result of the enhanced rate of oxidation. Moreover, the polarization-resolved PL measurements show that the emitted light is anisotropic when the excitation polarization is along the armchair direction. However, if excited along zigzag direction, the PL is nearly isotropic. Our findings suggest that the thermal annealing of BP can be used as a convenient route to fill the visible gap of the BP-based optoelectronic and optomechanical devices.

Development of a 2.0 eV AlGaInP Solar Cell Grown by OMVPE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Geisz, John F.

2015-06-14

AlGaInP solar cells with a bandgap (Eg) of ~2.0 eV are developed for use in next-generation multijunction photovoltaic devices. This material system is of great interest for both space and concentrator photovoltaics due to its high bandgap, which enables the development of high-efficiency five-junction and six-junction devices and is also useful for solar cells operated at elevated temperatures. In this work, we explore the conditions for the Organometallic Vapor Phase Epitaxy (OMVPE) growth of AlGaInP and study their effects on cell performance. A ~2.0 eV AlGaInP solar cell is demonstrated with an open circuit voltage (VOC) of 1.59V, a bandgap-voltagemore » offset (WOC) of 420mV, a fill factor (FF) of 88.0%, and an efficiency of 14.8%. These AlGaInP cells have attained a similar FF, WOC and internal quantum efficiency (IQE) to the best upright GaInP cells grown in our lab to date.« less

Optoelectronic and Thermoelectric Properties of Bi2OX 2 (X = S, Se, Te) for Solar Cells and Thermoelectric Devices

NASA Astrophysics Data System (ADS)

Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya

2018-02-01

We have explored the optoelectronic structure and related thermoelectric properties of Bi2OX 2 (X = S, Se, Te) using density functional theory and spin-orbit coupling (SOC). We report herein calculations of the bandgap of these bismuth sulfides/oxysulfides to participate in the recent debate regarding such values. The generalized gradient approximation calculations corrected using the SOC scheme estimated bandgaps of 0.950 eV, 0.635 eV, and 0.441 eV for Bi2OS2, Bi2OSe2, and Bi2OTe2, respectively, in close agreement with experimental results and showing better accuracy compared with available theoretical calculations. This bandgap range shows the potential use of Bi2OX 2 for solar cell applications. Hence, we derived their optical and thermoelectric properties. Similarly to one of the parent materials, Bi2S3, a semiconductor with special photovoltaic and thermoelectric properties, the present derivatives Bi2OX 2 show promising characteristics for exploration in the near future for use in solar cells and thermoelectric devices.

Growth and properties of wide bandgap (MgSe)n(ZnxCd1-xSe)m short-period superlattices

NASA Astrophysics Data System (ADS)

Garcia, Thor A.; Tamargo, Maria C.

2017-12-01

We report the molecular beam epitaxy (MBE) growth and properties of (MgSe)n(ZnxCd1-x Se)m short-period superlattices(SPSLs) for potential application in II-VI devices grown on InP substrates. SPSL structures up to 1 μm thick with effective bandgaps ranging from 2.6 eV to above 3.42 eV are grown and characterized, extending the typical range possible for the ZnxCdyMg1-x-ySe random alloy beyond 3.2 eV. Additionally, ZnxCd1-xSe single and multiple quantum well structures using the SPSL barriers are also grown and investigated. The structures are characterized utilizing reflection high-energy electron diffraction, X-ray reflectance, X-ray diffraction and photoluminescence. We observed layer-by-layer growth and smoother interfaces in the QWs grown with SPSL when compared to the ZnxCdyMg1-x-ySe random alloy. The results indicate that this materials platform is a good candidate to replace the random alloy in wide bandgap device applications.

Anisotropic visible photoluminescence from thermally annealed few-layer black phosphorus

NASA Astrophysics Data System (ADS)

Zhao, Chuan; Sekhar, M. Chandra; Lu, Wei; Zhang, Chenglong; Lai, Jiawei; Jia, Shuang; Sun, Dong

2018-06-01

Black phosphorus, a two-dimensional material, with high carrier mobility, tunable direct bandgap and anisotropic electronic properties has attracted enormous research interest towards potential application in electronic, optoelectronic and optomechanical devices. The bandgap of BP is thickness dependent, ranging from 0.3 eV for bulk to 1.3 eV for monolayer, while lacking in the visible region, a widely used optical regime for practical optoelectronic applications. In this work, photoluminescence (PL) centered at 605 nm is observed from the thermally annealed BP with thickness ≤20 nm. This higher energy PL is most likely the consequence of the formation of higher bandgap phosphorene oxides and suboxides on the surface BP layers as a result of the enhanced rate of oxidation. Moreover, the polarization-resolved PL measurements show that the emitted light is anisotropic when the excitation polarization is along the armchair direction. However, if excited along zigzag direction, the PL is nearly isotropic. Our findings suggest that the thermal annealing of BP can be used as a convenient route to fill the visible gap of the BP-based optoelectronic and optomechanical devices.

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamichhane, Ranjan; Ericson, Milton Nance; Frank, Steven Shane

2014-01-01

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz tomore » 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.« less

Semiconductor technology program: Progress briefs

NASA Technical Reports Server (NTRS)

Galloway, K. F.; Scace, R. I.; Walters, E. J.

1981-01-01

Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

Multijunction photovoltaic device and method of manufacture

DOEpatents

Arya, Rejeewa R.; Catalano, Anthony W.; Bennett, Murray

1995-04-04

A multijunction photovoltaic device includes first, second, and third amorphous silicon p-i-n photovoltaic cells in a stacked arrangement. The intrinsic layers of the second and third cells are formed of a-SiGe alloys with differing ratios of Ge such that the bandgap of the intrinsic layers respectively decrease from the first uppermost cell to the third lowermost cell. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one of the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers.

Studies of silicon p-n junction solar cells

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Lindholm, F. A.

1979-01-01

To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04688a

Structural and electronic properties of the V-V compounds isoelectronic to GaN and isostructural to gray arsenic

NASA Astrophysics Data System (ADS)

Yang, Zhao; Han, Dan; Chen, Guohong; Chen, Shiyou

2018-03-01

The III-V binary compound semiconductors such as GaN, GaP, InN and InP have extensive applications in various optoelectronic, microwave and power-electronic devices. Using first-principles calculation, we systematically studied the structural and electronic properties of the V-V binary compounds (BiN, BiP, SbN and SbP) that are isoelectronic to GaN, GaP, InN and InP if Bi and Sb are in the +3 valence state. Interestingly, we found that the ground-state structures of BiP, SbN and SbP have the R-3m symmetry and are isostructural to the layered structure of gray arsenic, whereas BiN prefers a different ground-state structure with the C2 symmetry. Electronic structure calculations showed that the bulk BiN is a narrow bandgap semiconductor for its bandgap is about 0.2 eV. In contrast, BiP, SbN and SbP are metallic. The layered ground-state structure of the V-V binary compounds motivates us to study the electronic properties of their few-layer structures. As the structure becomes monolayer, their bandgaps increase significantly and are all in the range from about 1 eV to 1.7 eV, which are comparative to the bandgap of the monolayer gray arsenic. The monolayer BiP, SbN and SbP have indirect bandgaps, and they show a semiconductor-metal transition as the number of layers increase. Interestingly, the monolayer BiP has the largest splitting (350 meV) of the CBM valley, and thus may have potential application in novel spintronics and valleytronics devices.

Optimizing pulse compressibility in completely all-fibered Ytterbium chirped pulse amplifiers for in vivo two photon laser scanning microscopy

PubMed Central

Fernández, A.; Grüner-Nielsen, L.; Andreana, M.; Stadler, M.; Kirchberger, S.; Sturtzel, C.; Distel, M.; Zhu, L.; Kautek, W.; Leitgeb, R.; Baltuska, A.; Jespersen, K.; Verhoef, A.

2017-01-01

A simple and completely all-fiber Yb chirped pulse amplifier that uses a dispersion matched fiber stretcher and a spliced-on hollow core photonic bandgap fiber compressor is applied in nonlinear optical microscopy. This stretching-compression approach improves compressibility and helps to maximize the fluorescence signal in two-photon laser scanning microscopy as compared with approaches that use standard single mode fibers as stretcher. We also show that in femtosecond all-fiber systems, compensation of higher order dispersion terms is relevant even for pulses with relatively narrow bandwidths for applications relying on nonlinear optical effects. The completely all-fiber system was applied to image green fluorescent beads, a stained lily-of-the-valley root and rat-tail tendon. We also demonstrated in vivo imaging in zebrafish larvae, where we simultaneously measure second harmonic and fluorescence from two-photon excited red-fluorescent protein. Since the pulses are compressed in a fiber, this source is especially suited for upgrading existing laser scanning (confocal) microscopes with multiphoton imaging capabilities in space restricted settings or for incorporation in endoscope-based microscopy. PMID:28856032

Optimizing pulse compressibility in completely all-fibered Ytterbium chirped pulse amplifiers for in vivo two photon laser scanning microscopy.

PubMed

Fernández, A; Grüner-Nielsen, L; Andreana, M; Stadler, M; Kirchberger, S; Sturtzel, C; Distel, M; Zhu, L; Kautek, W; Leitgeb, R; Baltuska, A; Jespersen, K; Verhoef, A

2017-08-01

A simple and completely all-fiber Yb chirped pulse amplifier that uses a dispersion matched fiber stretcher and a spliced-on hollow core photonic bandgap fiber compressor is applied in nonlinear optical microscopy. This stretching-compression approach improves compressibility and helps to maximize the fluorescence signal in two-photon laser scanning microscopy as compared with approaches that use standard single mode fibers as stretcher. We also show that in femtosecond all-fiber systems, compensation of higher order dispersion terms is relevant even for pulses with relatively narrow bandwidths for applications relying on nonlinear optical effects. The completely all-fiber system was applied to image green fluorescent beads, a stained lily-of-the-valley root and rat-tail tendon. We also demonstrated in vivo imaging in zebrafish larvae, where we simultaneously measure second harmonic and fluorescence from two-photon excited red-fluorescent protein. Since the pulses are compressed in a fiber, this source is especially suited for upgrading existing laser scanning (confocal) microscopes with multiphoton imaging capabilities in space restricted settings or for incorporation in endoscope-based microscopy.

Finite element BPM fiber modal instability modeling

NASA Astrophysics Data System (ADS)

Ward, Benjamin G.

2018-02-01

Two approaches are presented for detailed analysis of transverse mode instability in fiber amplifiers based on a scalar finite element beam propagation method (BPM). The first employs two beams: one propagating at a fundamental frequency and one de-tuned to the middle of the stimulated thermal Rayleigh scattering (STRS) gain peak. This method was found to suffer from a computational artifact causing it to converge in some cases to an unphysical solution. The second was based on the steady periodic method. This required more computational resources but was found to be reliable and not susceptible to the artifact mentioned above. This method was used to simulate step-index fiber amplifiers, large pitch photonic crystal fiber amplifiers, and a hybrid large pitch photonic bandgap fiber amplifier with reduced symmetry. Results for reference step index fiber amplifiers were found to be consistent with those obtained by other methods. The simulated instability threshold values all fell between 200 and 310 Watts showing relatively little variation among designs. Some areas for improvement in the method are discussed.

Optimization and experimental validation of stiff porous phononic plates for widest complete bandgap of mixed fundamental guided wave modes

NASA Astrophysics Data System (ADS)

Hedayatrasa, Saeid; Kersemans, Mathias; Abhary, Kazem; Uddin, Mohammad; Van Paepegem, Wim

2018-01-01

Phononic crystal plates (PhPs) have promising application in manipulation of guided waves for design of low-loss acoustic devices and built-in acoustic metamaterial lenses in plate structures. The prominent feature of phononic crystals is the existence of frequency bandgaps over which the waves are stopped, or are resonated and guided within appropriate defects. Therefore, maximized bandgaps of PhPs are desirable to enhance their phononic controllability. Porous PhPs produced through perforation of a uniform background plate, in which the porous interfaces act as strong reflectors of wave energy, are relatively easy to produce. However, the research in optimization of porous PhPs and experimental validation of achieved topologies has been very limited and particularly focused on bandgaps of flexural (asymmetric) wave modes. In this paper, porous PhPs are optimized through an efficient multiobjective genetic algorithm for widest complete bandgap of mixed fundamental guided wave modes (symmetric and asymmetric) and maximized stiffness. The Pareto front of optimization is analyzed and variation of bandgap efficiency with respect to stiffness is presented for various optimized topologies. Selected optimized topologies from the stiff and compliant regimes of Pareto front are manufactured by water-jetting an aluminum plate and their promising bandgap efficiency is experimentally observed. An optimized Pareto topology is also chosen and manufactured by laser cutting a Plexiglas (PMMA) plate, and its performance in self-collimation and focusing of guided waves is verified as compared to calculated dispersion properties.

Chlorine doped graphene quantum dots: Preparation, properties, and photovoltaic detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Jianhong; Xiang, Jinzhong, E-mail: jzhxiang@ynu.edu.cn; Tang, Libin, E-mail: scitang@163.com

Graphene quantum dots (GQDs) are becoming one of the hottest advanced functional materials because of the opening of the bandgap due to quantum confinement effect, which shows unique optical and electrical properties. The chlorine doped GQDs (Cl-GQDs) have been fabricated by chemical exfoliation of HCl treated carbon fibers (CFs), which were prepared from degreasing cotton through an annealing process at 1000 °C for 30 min. Raman study shows that both G and 2D peaks of GQDs may be redshifted (softened) by chlorine doping, leading to an n-type doping. The first vertical (Cl)-GQDs based photovoltaic detectors have been demonstrated, both the light absorbingmore » and electron-accepting roles for (Cl)-GQDs in photodetection have been found, resulting in an exceptionally big ratio of photocurrent to dark current as high as ∼10{sup 5} at room temperature using a 405 nm laser irradiation under the reverse bias voltage. The study expands the application of (Cl)-GQDs to the important optoelectronic detection devices.« less

Vertical III-nitride thin-film power diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

2017-03-14

A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilberto

Thermal modeling was conducted to evaluate and develop thermal management strategies for high-temperature wide-bandgap (WBG)-based power electronics systems. WBG device temperatures of 175 degrees C to 250 degrees C were modeled under various under-hood temperature environments. Modeling result were used to identify the most effective capacitor cooling strategies under high device temperature conditions.

Manipulation of spontaneous emission in a tapered photonic crystal fibre

NASA Astrophysics Data System (ADS)

Myers, S. J.; Fussell, D. P.; Dawes, J. M.; Mägi, E.; McPhedran, R. C.; Eggleton, B. J.; de Sterke, C. Martijn

2006-12-01

We characterize the spontaneous emission of dye that is introduced into the central core of a tapered photonic crystal fiber. Since the photonic crystal period in the fibre cladding varies along the taper, the transmission and spontaneous emission spectra over a wide range of relative frequencies can be observed. The spontaneous emission spectra of the fibre transverse to the fiber axis show suppression due to partial band-gaps of the structure, and also enhancement of spontaneous emission near the band edges. We associate these with van Hove features, as well as finite cluster size effects.

Enhanced conversion efficiency in wide-bandgap GaNP solar cells

DOE PAGES

Sukrittanon, Supanee; Liu, Ren; Ro, Yun Goo; ...

2015-10-12

In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, E g –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher thanmore » other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.« less

High-efficiency photovoltaic cells

DOEpatents

Yang, H.T.; Zehr, S.W.

1982-06-21

High efficiency solar converters comprised of a two cell, non-lattice matched, monolithic stacked semiconductor configuration using optimum pairs of cells having bandgaps in the range 1.6 to 1.7 eV and 0.95 to 1.1 eV, and a method of fabrication thereof, are disclosed. The high band gap subcells are fabricated using metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) to produce the required AlGaAs layers of optimized composition, thickness and doping to produce high performance, heteroface homojunction devices. The low bandgap subcells are similarly fabricated from AlGa(As)Sb compositions by LPE, MBE or MOCVD. These subcells are then coupled to form a monolithic structure by an appropriate bonding technique which also forms the required transparent intercell ohmic contact (IOC) between the two subcells. Improved ohmic contacts to the high bandgap semiconductor structure can be formed by vacuum evaporating to suitable metal or semiconductor materials which react during laser annealing to form a low bandgap semiconductor which provides a low contact resistance structure.

Bandgap and pseudohelicity effects over conductance in gapped graphene junctures

NASA Astrophysics Data System (ADS)

Navarro-Giraldo, J. A.; Quimbay, C. J.

2018-07-01

We study the conductance in gapped single-layer graphene junctures as a function of bangap, pseudohelicity and charge carriers density. To do it, we first calculate the transmission coefficients of massive charge carries for p–n and n–p–n junctures of gapped single-layer graphene. Next, we calculate the conductance for these two systems using the Landauer formula. Only for the p–n juncture case and non-zero bandgap values, we find the existence of a contribution to the conductance from pseudohelicity inversion states, which is small compared to the contribution from pseudohelicity conservation states. Also, we find for both type of junctures that there exists a window of charge carriers densities values where the conductance is zero (conductance gap), in such a way that the size of this window depends on the squared of the bandgap. We observe that the existence of a bandgap in the system leads to valley mixing and this fact could be useful for the future design of devices based on single-layer graphene.

Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor.

PubMed

Yu, Xuechao; Yu, Peng; Wu, Di; Singh, Bahadur; Zeng, Qingsheng; Lin, Hsin; Zhou, Wu; Lin, Junhao; Suenaga, Kazu; Liu, Zheng; Wang, Qi Jie

2018-04-18

The interest in mid-infrared technologies surrounds plenty of important optoelectronic applications ranging from optical communications, biomedical imaging to night vision cameras, and so on. Although narrow bandgap semiconductors, such as Mercury Cadmium Telluride and Indium Antimonide, and quantum superlattices based on inter-subband transitions in wide bandgap semiconductors, have been employed for mid-infrared applications, it remains a daunting challenge to search for other materials that possess suitable bandgaps in this wavelength range. Here, we demonstrate experimentally for the first time that two-dimensional (2D) atomically thin PtSe 2 has a variable bandgap in the mid-infrared via layer and defect engineering. Here, we show that bilayer PtSe 2 combined with defects modulation possesses strong light absorption in the mid-infrared region, and we realize a mid-infrared photoconductive detector operating in a broadband mid-infrared range. Our results pave the way for atomically thin 2D noble metal dichalcogenides to be employed in high-performance mid-infrared optoelectronic devices.

Plasmon-Enhanced Sub-Bandgap Photocatalysis via Triplet-Triplet Annihilation Upconversion for Volatile Organic Compound Degradation.

PubMed

Kim, Hyoung-Il; Weon, Seunghyun; Kang, Homan; Hagstrom, Anna L; Kwon, Oh Seok; Lee, Yoon-Sik; Choi, Wonyong; Kim, Jae-Hong

2016-10-18

This study demonstrates the first reported photocatalytic decomposition of an indoor air pollutant, acetaldehyde, using low-energy, sub-bandgap photons harnessed through sensitized triplet-triplet annihilation (TTA) upconversion (UC). To utilize low-intensity noncoherent indoor light and maximize photocatalytic activity, we designed a plasmon-enhanced sub-bandgap photocatalyst device consisting of two main components: (1) TTA-UC rubbery polymer films containing broad-band plasmonic particles (Ag-SiO 2 ) to upconvert sub-bandgap photons, and (2) nanodiamond (ND)-loaded WO 3 as a visible-light photocatalyst composite. Effective decomposition of acetaldehyde was achieved using ND/WO 3 (E g = 2.8 eV) coupled with TTA-UC polymer films that emit blue photons (λ Em = 425 nm, 2.92 eV) upconverted from green photons (λ Ex = 532 nm, 2.33 eV), which are wasted in most environmental photocatalysis. The overall photocatalytic efficiency was amplified by the broad-band surface plasmon resonance of AgNP-SiO 2 particles incorporated into the TTA-UC films.

Recent Advances in Wide-Bandgap Photovoltaic Polymers.

PubMed

Cai, Yunhao; Huo, Lijun; Sun, Yanming

2017-06-01

The past decade has witnessed significant advances in the field of organic solar cells (OSCs). Ongoing improvements in the power conversion efficiency of OSCs have been achieved, which were mainly attributed to the design and synthesis of novel conjugated polymers with different architectures and functional moieties. Among various conjugated polymers, the development of wide-bandgap (WBG) polymers has received less attention than that of low-bandgap and medium-bandgap polymers. Here, we briefly summarize recent advances in WBG polymers and their applications in organic photovoltaic (PV) devices, such as tandem, ternary, and non-fullerene solar cells. Addtionally, we also dissuss the application of high open-circuit voltage tandem solar cells in PV-driven electrochemical water dissociation. We mainly focus on the molecular design strategies, the structure-property correlations, and the photovoltaic performance of these WBG polymers. Finally, we extract empirical regularities and provide invigorating perspectives on the future development of WBG photovoltaic materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Competing Gap Opening Mechanisms of Monolayer Graphene and Graphene Nanoribbons on Strong Topological Insulators.

PubMed

Lin, Zhuonan; Qin, Wei; Zeng, Jiang; Chen, Wei; Cui, Ping; Cho, Jun-Hyung; Qiao, Zhenhua; Zhang, Zhenyu

2017-07-12

Graphene is a promising material for designing next-generation electronic and valleytronic devices, which often demand the opening of a bandgap in the otherwise gapless pristine graphene. To date, several conceptually different mechanisms have been extensively exploited to induce bandgaps in graphene, including spin-orbit coupling and inversion symmetry breaking for monolayer graphene, and quantum confinement for graphene nanoribbons (GNRs). Here, we present a multiscale study of the competing gap opening mechanisms in a graphene overlayer and GNRs proximity-coupled to topological insulators (TIs). We obtain sizable graphene bandgaps even without inversion symmetry breaking and identify the Kekulé lattice distortions caused by the TI substrates to be the dominant gap opening mechanism. Furthermore, Kekulé distorted armchair GNRs display intriguing nonmonotonous gap dependence on the nanoribbon width, resulting from the coexistence of quantum confinement, edge passivation, and Kekulé distortions. The present study offers viable new approaches for tunable bandgap engineering in graphene and GNRs.

Novel molecular host materials based on carbazole/PO hybrids with wide bandgap via unique linkages for solution-processed blue phosphorescent OLEDs

NASA Astrophysics Data System (ADS)

Ye, Hua; Zhou, Kaifeng; Wu, Hongyu; Chen, Kai; Xie, Gaozhan; Hu, Jingang; Yan, Guobing; Ma, Songhua; Su, Shi-Jian; Cao, Yong

2016-10-01

A series of novel molecules with wide bandgap based on electron-withdrawing diphenyl phosphine oxide units and electron-donating carbazolyl moieties through insulated unique linkages of flexible chains terminated by oxygen or sulfur atoms as solution-processable host materials were successfully synthesized for the first time, and their thermal, photophysical, and electrochemical properties were studied thoroughly. These materials possess high triplet energy levels (ET, 2.76-2.77 eV) due to the introduction of alkyl chain to interrupt the conjugation between electron-donor and electron-acceptor. Such high ET could effectively curb the energy from phosphorescent emitter transfer to the host molecules and thus assuring the emission of devices was all from the blue phosphorescent emitter iridium (III) bis [(4,6-difluorophenyl)-pyridinate-N,C2‧]picolinate (FIrpic). Among them, the solution-processed device based on CBCR6OPO without extra vacuum thermal-deposited hole-blocking layer and electron-transporting layer showed the highest maximum current efficiency (CEmax) of 4.16 cd/A. Moreover, the device presented small efficiency roll-off with current efficiency (CE) of 4.05 cd/A at high brightness up to 100 cd/m2. Our work suggests the potential applications of the solution-processable materials with wide bandgap in full-color flat-panel displays and organic lighting.

Strain engineering of graphene nanoribbons: pseudomagnetic versus external magnetic fields

NASA Astrophysics Data System (ADS)

Prabhakar, Sanjay; Melnik, Roderick; Bonilla, Luis

2017-05-01

Bandgap opening due to strain engineering is a key architect for making graphene's optoelectronic, straintronic, and spintronic devices. We study the bandgap opening due to strain induced ripple waves and investigate the interplay between pseudomagnetic fields and externally applied magnetic fields on the band structures and spin relaxation in graphene nanoribbons (GNRs). We show that electron-hole bands of GNRs are highly influenced (i.e. level crossing of the bands are possible) by coupling two combined effects: pseudomagnetic fields (PMF) originating from strain tensor and external magnetic fields. In particular, we show that the tuning of the spin-splitting band extends to large externally applied magnetic fields with increasing values of pseudomagnetic fields. Level crossings of the bands in strained GNRs can also be observed due to the interplay between pseudomagnetic fields and externally applied magnetic fields. We also investigate the influence of this interplay on the electromagnetic field mediated spin relaxation mechanism in GNRs. In particular, we show that the spin hot spot can be observed at approximately B = 65 T (the externally applied magnetic field) and B0 = 53 T (the magnitude of induced pseudomagnetic field due to ripple waves) which may not be considered as an ideal location for the design of straintronic devices. Our analysis might be used for tuning the bandgaps in strained GNRs and utilized to design the optoelectronic devices for straintronic applications.

Vanadium supersaturated silicon system: a theoretical and experimental approach

NASA Astrophysics Data System (ADS)

Garcia-Hemme, Eric; García, Gregorio; Palacios, Pablo; Montero, Daniel; García-Hernansanz, Rodrigo; Gonzalez-Diaz, Germán; Wahnon, Perla

2017-12-01

The effect of high dose vanadium ion implantation and pulsed laser annealing on the crystal structure and sub-bandgap optical absorption features of V-supersaturated silicon samples has been studied through the combination of experimental and theoretical approaches. Interest in V-supersaturated Si focusses on its potential as a material having a new band within the Si bandgap. Rutherford backscattering spectrometry measurements and formation energies computed through quantum calculations provide evidence that V atoms are mainly located at interstitial positions. The response of sub-bandgap spectral photoconductance is extended far into the infrared region of the spectrum. Theoretical simulations (based on density functional theory and many-body perturbation in GW approximation) bring to light that, in addition to V atoms at interstitial positions, Si defects should also be taken into account in explaining the experimental profile of the spectral photoconductance. The combination of experimental and theoretical methods provides evidence that the improved spectral photoconductance up to 6.2 µm (0.2 eV) is due to new sub-bandgap transitions, for which the new band due to V atoms within the Si bandgap plays an essential role. This enables the use of V-supersaturated silicon in the third generation of photovoltaic devices.

Bandgap control and optical properties of β-Si3N4 by single- and co-doping from a first-principles simulation

NASA Astrophysics Data System (ADS)

Lu, Xuefeng; Gao, Xu; Ren, Junqiang; Li, Cuixia; Guo, Xin; Wei, Yupeng; La, Peiqing

2018-06-01

Bandgap tailoring of β-Si3N4 is performed by single and co-doping by using density functional theory (DFT) of PBE functional and plane-wave pseudopotential method. The results reveal that a direct bandgap transfers into an indirect one when single-doped with As element. Also, a considerate decrease of bandgap to 0.221 eV and 0.315 eV is present for Al-P and As-P co-doped systems, respectively, exhibiting a representative semiconductor property that is characteristic for a narrower bandgap. Compared with other doped systems, Al-doped system with formation energy of 2.67 eV is present for a more stable structure. From charge density difference (CDD) maps, it is found that the blue area between co-doped atoms increases, illustrating an enhancement of covalent property for Al-P and Al-As bonds. Moreover, a slightly obvious “Blue shift” phenomenon can be obtained in Al, Al-P and Al-As doped systems, indicating an enhanced capacity of responses to light, which contributes to the insight for broader applications with regard to photoelectric devices.

A magnetic phase-transition graphene transistor with tunable spin polarization

NASA Astrophysics Data System (ADS)

Vancsó, Péter; Hagymási, Imre; Tapasztó, Levente

2017-06-01

Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge and spin signals, integrated within the simplest three-terminal device configuration. In a conventional FET device, a gate electrode is employed to tune the Fermi level of the system in and out of a static bandgap. By contrast, in the switching mechanism proposed here, the applied gate voltage can dynamically open and close an interaction gap, with only a minor shift of the Fermi level. Furthermore, the strong interplay of the band structure and edge spin configuration in zigzag ribbons enables such transistors to carry spin polarized current without employing an external magnetic field or ferromagnetic contacts. Using an experimentally validated theoretical model, we show that such transistors can switch at low voltages and high speed, and the spin polarization of the current can be tuned from 0% to 50% by using the same back gate electrode. Furthermore, such devices are expected to be robust against edge irregularities and can operate at room temperature. Controlling both charge and spin signal within the simplest FET device configuration could open up new routes in data processing with graphene based devices.

Advanced Materials for High Temperature, High Performance, Wide Bandgap Power Modules

NASA Astrophysics Data System (ADS)

O'Neal, Chad B.; McGee, Brad; McPherson, Brice; Stabach, Jennifer; Lollar, Richard; Liederbach, Ross; Passmore, Brandon

2016-01-01

Advanced packaging materials must be utilized to take full advantage of the benefits of the superior electrical and thermal properties of wide bandgap power devices in the development of next generation power electronics systems. In this manuscript, the use of advanced materials for key packaging processes and components in multi-chip power modules will be discussed. For example, to date, there has been significant development in silver sintering paste as a high temperature die attach material replacement for conventional solder-based attach due to the improved thermal and mechanical characteristics as well as lower processing temperatures. In order to evaluate the bond quality and performance of this material, shear strength, thermal characteristics, and void quality for a number of silver sintering paste materials were analyzed as a die attach alternative to solder. In addition, as high voltage wide bandgap devices shift from engineering samples to commercial components, passivation materials become key in preventing premature breakdown in power modules. High temperature, high dielectric strength potting materials were investigated to be used to encapsulate and passivate components internal to a power module. The breakdown voltage up to 30 kV and corresponding leakage current for these materials as a function of temperature is also presented. Lastly, high temperature plastic housing materials are important for not only discrete devices but also for power modules. As the operational temperature of the device and/or ambient temperature increases, the mechanical strength and dielectric properties are dramatically reduced. Therefore, the electrical characteristics such as breakdown voltage and leakage current as a function of temperature for housing materials are presented.

Beyond Donor-Acceptor (D-A) Approach: Structure-Optoelectronic Properties-Organic Photovoltaic Performance Correlation in New D-A1 -D-A2 Low-Bandgap Conjugated Polymers.

PubMed

Chochos, Christos L; Drakopoulou, Sofia; Katsouras, Athanasios; Squeo, Benedetta M; Sprau, Christian; Colsmann, Alexander; Gregoriou, Vasilis G; Cando, Alex-Palma; Allard, Sybille; Scherf, Ullrich; Gasparini, Nicola; Kazerouni, Negar; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-04-01

Low-bandgap near-infrared polymers are usually synthesized using the common donor-acceptor (D-A) approach. However, recently polymer chemists are introducing more complex chemical concepts for better fine tuning of their optoelectronic properties. Usually these studies are limited to one or two polymer examples in each case study so far, though. In this study, the dependence of optoelectronic and macroscopic (device performance) properties in a series of six new D-A 1 -D-A 2 low bandgap semiconducting polymers is reported for the first time. Correlation between the chemical structure of single-component polymer films and their optoelectronic properties has been achieved in terms of absorption maxima, optical bandgap, ionization potential, and electron affinity. Preliminary organic photovoltaic results based on blends of the D-A 1 -D-A 2 polymers as the electron donor mixed with the fullerene derivative [6,6]-phenyl-C 71 -butyric acid methyl ester demonstrate power conversion efficiencies close to 4% with short-circuit current densities (J sc ) of around 11 mA cm -2 , high fill factors up to 0.70, and high open-circuit voltages (V oc s) of 0.70 V. All the devices are fabricated in an inverted architecture with the photoactive layer processed in air with doctor blade technique, showing the compatibility with roll-to-roll large-scale manufacturing processes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Colloidal Engineering for Infrared-Bandgap Solution-Processed Quantum Dot Solar Cells

NASA Astrophysics Data System (ADS)

Kiani, Amirreza

Ever-increasing global energy demand and a diminishing fossil fuel supply have prompted the development of technologies for sustainable energy production. Solar photovoltaic (PV) devices have huge potential for energy harvesting and production since the sun delivers more energy to the earth in one hour than the global population consumes in one year. The solar cell industry is now dominated by silicon PV devices. The cost of silicon modules has decreased substantially over the past two decades and the number of installed silicon PV devices has increased dramatically. There remains a need for emerging solar technologies that can harvest the untapped portion of the solar spectrum and can be integrated on flexible and curved surfaces. This thesis focuses on colloidal quantum dot (CQD) PV devices. CQDs are nanoparticles fabricated using a low-temperature and cost-effective solution technique. These materials suffer from a high density of surface traps derived from the large surface-to-volume ratio of CQD nanoparticles, combined with limited carrier mobility. These result in a short carrier diffusion length, a main limiting factor in CQD solar cell performance. This thesis seeks to address the poor diffusion length in lead sulfide (PbS) CQD films and pave the way for new applications for CQD PV devices in infrared solar harvesting and waste heat recovery. A two-fold reduction in surface trap density is demonstrated using molecular halide treatment. Iodine molecules introduced prior to the film formation replace the otherwise unpassivated surface sulfur atoms. This results in a 35% increase in the diffusion length and enables charge extraction over thicker active layer leading to the world's most efficient CQD PV devices from June 2015 to July 2016 with the certified power conversion efficiency of 9.9%. This represents a 30% increase over the best-certified PCE (7.5%) prior to this thesis. The colloidal engineering highlighted herein enables infrared (IR) solar harvesting for the first time. Addition of short bromothiol ligands during the synthesis significantly reduces the agglomeration of 1 eV bandgap CQDs and maintains efficient charge extraction into the selective electrodes. The devices can augment the performance of the best silicon cells by 7 power points where 0.8 additive power points are demonstrated experimentally. A tailored solution exchanged process developed for 1 eV bandgap CQDs results in air-stable IR PV devices with improved manufacturability. The process utilizes a tailored combination of lead iodide (PbI2) and ammonium acetate for the solution exchange and hexylamine + MEK as the final solvent to yield solar thick films with the filtered (1100 nm and beyond) performance of 0.4%. This thesis pushes the limit of CQD device applications to waste heat recovery. I demonstrate successful harvesting of low energy photons emitted from a hot object by designing and developing the first solution-processed thermophotovoltaic devices. These devices are comprised of 0.7 eV bandgap CQDs that successfully harvest photons emitted from an 800°C heat source.

SiP monolayers: New 2D structures of group IV-V compounds for visible-light photohydrolytic catalysts

NASA Astrophysics Data System (ADS)

Ma, Zhinan; Zhuang, Jibin; Zhang, Xu; Zhou, Zhen

2018-06-01

Because of graphene and phosphorene, two-dimensional (2D) layered materials of group IV and group V elements arouse great interest. However, group IV-V monolayers have not received due attention. In this work, three types of SiP monolayers were computationally designed to explore their electronic structure and optical properties. Computations confirm the stability of these monolayers, which are all indirect-bandgap semiconductors with bandgaps in the range 1.38-2.21 eV. The bandgaps straddle the redox potentials of water at pH = 0, indicating the potential of the monolayers for use as watersplitting photocatalysts. The computed optical properties demonstrate that certain monolayers of SiP 2D materials are absorbers of visible light and would serve as good candidates for optoelectronic devices.

Direct bandgap materials based on the thin films of SexTe100 − x nanoparticles

PubMed Central

2012-01-01

In this study, we fabricated thin films of SexTe100 − x (x = 0, 3, 6, 9, 12, and 24) nanoparticles using thermal evaporation technique. The results obtained by X-ray diffraction show that the as-synthesized nanoparticles have polycrystalline structure, but their crystallinity decreases by increasing the concentration of Se. They were found to have direct bandgap (Eg), whose value increases by increasing the Se content. These results are completely different than those obtained in the films of SexTe100 − x microstructure counterparts. Photoluminescence and Raman spectra for these films were also demonstrated. The remarkable results obtained in these nanoparticles specially their controlled direct bandgap might be useful for the development of optical disks and other semiconductor devices. PMID:22978714

Method for producing high energy electroluminescent devices

DOEpatents

Meyerson, Bernard S.; Scott, Bruce A.; Wolford, Jr., Donald J.

1992-09-29

A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.

Methodology for Wide Band-Gap Device Dynamic Characterization

DOE PAGES

Zhang, Zheyu; Guo, Ben; Wang, Fei Fred; ...

2017-01-19

Here, the double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior of power devices. Considering the high switching-speed capability of wide band-gap devices, the test results are very sensitive to the alignment of voltage and current (V-I) measurements. Also, because of the shoot-through current induced by Cdv/dt (i.e., cross-talk), the switching losses of the nonoperating switch device in a phase-leg must be considered in addition to the operating device. This paper summarizes the key issues of the DPT, including components and layout design, measurement considerations, grounding effects, and data processing. Additionally, a practical method ismore » proposed for phase-leg switching loss evaluation by calculating the difference between the input energy supplied by a dc capacitor and the output energy stored in a load inductor. Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V-I timing misalignment errors.« less

Thermal modeling of wide bandgap semiconductor devices for high frequency power converters

NASA Astrophysics Data System (ADS)

Sharath Sundar Ram, S.; Vijayakumari, A.

2018-02-01

The emergence of wide bandgap semiconductors has led to development of new generation semiconductor switches that are highly efficient and scalable. To exploit the advantages of GaNFETs in power converters, in terms of reduction in the size of heat sinks and filters, a thorough understanding of the thermal behavior of the device is essential. This paper aims to establish a thermal model for wideband gap semiconductor GaNFETs commercially available, which will enable power electronic designers to obtain the thermal characteristics of the device more effectively. The model parameters is obtained from the manufacturer’s data sheet by adopting an exponential curve fitting technique and the thermal model is validated using PSPICE simulations. The model was developed based on the parametric equivalence that exists between the thermal and electrical components, such that it responds for transient thermal stresses. A suitable power profile has been generated to evaluate the GaNFET model under different power dissipation scenarios. The results were compared with a Silicon MOSFETs to further highlight the advantages of the GaN devices. The proposed modeling approach can be extended for other GaN devices and can provide a platform for the thermal study and heat sink optimization.

Reducing the efficiency-stability-cost gap of organic photovoltaics with highly efficient and stable small molecule acceptor ternary solar cells

NASA Astrophysics Data System (ADS)

Baran, Derya; Ashraf, Raja Shahid; Hanifi, David A.; Abdelsamie, Maged; Gasparini, Nicola; Röhr, Jason A.; Holliday, Sarah; Wadsworth, Andrew; Lockett, Sarah; Neophytou, Marios; Emmott, Christopher J. M.; Nelson, Jenny; Brabec, Christoph J.; Amassian, Aram; Salleo, Alberto; Kirchartz, Thomas; Durrant, James R.; McCulloch, Iain

2017-03-01

Technological deployment of organic photovoltaic modules requires improvements in device light-conversion efficiency and stability while keeping material costs low. Here we demonstrate highly efficient and stable solar cells using a ternary approach, wherein two non-fullerene acceptors are combined with both a scalable and affordable donor polymer, poly(3-hexylthiophene) (P3HT), and a high-efficiency, low-bandgap polymer in a single-layer bulk-heterojunction device. The addition of a strongly absorbing small molecule acceptor into a P3HT-based non-fullerene blend increases the device efficiency up to 7.7 +/- 0.1% without any solvent additives. The improvement is assigned to changes in microstructure that reduce charge recombination and increase the photovoltage, and to improved light harvesting across the visible region. The stability of P3HT-based devices in ambient conditions is also significantly improved relative to polymer:fullerene devices. Combined with a low-bandgap donor polymer (PBDTTT-EFT, also known as PCE10), the two mixed acceptors also lead to solar cells with 11.0 +/- 0.4% efficiency and a high open-circuit voltage of 1.03 +/- 0.01 V.

FIBER AND INTEGRATED OPTICS: Bandgap modes in a coupled waveguide array

NASA Astrophysics Data System (ADS)

Usievich, B. A.; Nurligareev, D. Kh; Svetikov, V. V.; Sychugov, V. A.

2009-08-01

This work examines a waveguide array that consists of ten Nb2O5/SiO2 double layers and supports a 0.63-μm surface wave. The deposition of a Nb2O5 capping layer on top of the waveguide array enables a marked increase in the wave field intensity on its surface. The efficiency of surface-wave excitation in the Kretschmann configuration can be optimised by adjusting the number of double layers. We analyse the behaviour of the Bragg mode in relation to the thickness of the layer exposed to air and the transition of this mode from the second allowed band to the first through the bandgap of the system. In addition, the conventional leaky mode converts to a surface mode and then to a guided mode.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Braly, Ian L.; Hillhouse, Hugh W.

The development of stable high-bandgap hybrid perovskites (HPs) with high optoelectronic quality may enable tandem solar cells with power conversion efficiencies approaching 30%. The halide composition of HPs has been observed to effect bandgap, carrier lifetime, and material stability. Here we report optoelectronic quality and stability under illumination of thousands of compositions ranging from the pure iodide (CH3NH3PbI3) to the diiodomonobromide (CH3NH3PbI2Br). Hyperspectral maps of steady-state absolute intensity photoluminescence (AIPL) are used to determine the quasi-Fermi level splitting (QFLS) at each point after synthesis. The QFLS upon first illumination increases with bandgap and reaches a maximum of 1.27 eV undermore » 1 sun illumination intensity for a bandgap of 1.75 eV. However, the optoelectronic quality (χ), defined as the ratio of the QFLS to the maximum theoretical QFLS for bandgap, decreases with bandgap from around 88% for 1.60 eV bandgap down to 82% for 1.84 eV bandgap. Further, we show that a reversible light induced defect forms that reduces the optoelectronic quality, particularly for high-bandgap materials. Composition analysis shows that the halide to lead ratio, (I + Br)/Pb, decreases from 3 for the pure iodide to 2.5 for the diiodomonobromide, suggesting a role of halide vacancies or halide substitution defects in the light-induced instability for this synthesis route. Even with the light-induced defect, a stable QFLS of about 1.17 eV is possible. Comparing our QFLS to Voc values from HP devices reported in the literature indicates that higher open circuit voltages are possible but may require optimization of band alignment. Further, the spectral shape of the PL emission is found to be more commensurate with Franz–Keldysh broadening from local electric fields or from a screened Thomas–Fermi density of states (as opposed to a joint density of states due to Urbach disorder).« less

Nitride based quantum well light-emitting devices having improved current injection efficiency

DOEpatents

Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald

2014-12-09

A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.

Observation of low voltage driven green emission from erbium doped Ga{sub 2}O{sub 3} light-emitting devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Zhengwei; Wang, Xu; Zhang, Fabi

Erbium doped Ga{sub 2}O{sub 3} thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga{sub 2}O{sub 3}:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga{sub 2}O{sub 3} contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this workmore » paves the way for the development of Si-based green LEDs by using wide bandgap Ga{sub 2}O{sub 3} as the host materials for Er{sup 3+} ions.« less

Quantum-engineered interband cascade photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Razeghi, Manijeh; Tournié, Eric; Brown, Gail J.

2013-12-18

Quantum-engineered multiple stage photovoltaic (PV) devices are explored based on InAs/GaSb/AlSb interband cascade (IC) structures. These ICPV devices employ multiple discrete absorbers that are connected in series by widebandgap unipolar barriers using type-II heterostructure interfaces for facilitating carrier transport between cascade stages similar to IC lasers. The discrete architecture is beneficial for improving the collection efficiency and for spectral splitting by utilizing absorbers with different bandgaps. As such, the photo-voltages from each individual cascade stage in an ICPV device add together, creating a high overall open-circuit voltage, similar to conventional multi-junction tandem solar cells. Furthermore, photo-generated carriers can be collectedmore » with nearly 100% efficiency in each stage. This is because the carriers travel over only a single cascade stage, designed to be shorter than a typical diffusion length. The approach is of significant importance for operation at high temperatures where the diffusion length is reduced. Here, we will present our recent progress in the study of ICPV devices, which includes the demonstration of ICPV devices at room temperature and above with narrow bandgaps (e.g. 0.23 eV) and high open-circuit voltages. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.« less

High bandgap III-V alloys for high efficiency optoelectronics

DOEpatents

Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

2017-01-10

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

21 CFR 880.5300 - Medical absorbent fiber.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Medical absorbent fiber. 880.5300 Section 880.5300...) MEDICAL DEVICES GENERAL HOSPITAL AND PERSONAL USE DEVICES General Hospital and Personal Use Therapeutic Devices § 880.5300 Medical absorbent fiber. (a) Identification. A medical absorbent fiber is a device...

21 CFR 880.5300 - Medical absorbent fiber.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Medical absorbent fiber. 880.5300 Section 880.5300...) MEDICAL DEVICES GENERAL HOSPITAL AND PERSONAL USE DEVICES General Hospital and Personal Use Therapeutic Devices § 880.5300 Medical absorbent fiber. (a) Identification. A medical absorbent fiber is a device...

Color tunable photonic textiles for wearable display applications

NASA Astrophysics Data System (ADS)

Sayed, I.; Berzowska, J.; Skorobogatiy, M.

2010-04-01

Integration of optical functionalities such as light emission, processing and collection into flexible woven matrices of fabric have grabbed a lot of attention in the last few years. Photonic textiles frequently involve optical fibers as they can be easily processed together with supporting fabric fibers. This technology finds uses in various fields of application such as interactive clothing, signage, wearable health monitoring sensors and mechanical strain and deformation detectors. Recent development in the field of Photonic Band Gap optical fibers (PBG) could potentially lead to novel photonic textiles applications and techniques. Particularly, plastic PBG Bragg fibers fabricated in our group have strong potential in the field of photonic textiles as they offer many advantages over standard silica fibers at the same low cost. Among many unusual properties of PBG textiles we mention that they are highly reflective, PBG textiles are colored without using any colorants, PBG textiles can change their color by controlling the relative intensities of guided and reflected light, and finally, PBG textiles can change their colors when stretched. Some of the many experimental realization of photonic bandgap fiber textiles and their potential applications in wearable displays are discussed.

Optical fiber stripper positioning apparatus

DOEpatents

Fyfe, Richard W.; Sanchez, Jr., Amadeo

1990-01-01

An optical fiber positioning apparatus for an optical fiber stripping device is disclosed which is capable of providing precise axial alignment between an optical fiber to be stripped of its outer jacket and the cutting blades of a stripping device. The apparatus includes a first bore having a width approximately equal to the diameter of an unstripped optical fiber and a counter bore axially aligned with the first bore and dimensioned to precisely receive a portion of the stripping device in axial alignment with notched cutting blades within the stripping device to thereby axially align the notched cutting blades of the stripping device with the axis of the optical fiber to permit the notched cutting blades to sever the jacket on the optical fiber without damaging the cladding on the optical fiber. In a preferred embodiment, the apparatus further includes a fiber stop which permits determination of the length of jacket to be removed from the optical fiber.

Impact of strain on electronic and transport properties of 6 nm hydrogenated germanane nano-ribbon channel double gate field effect transistor

NASA Astrophysics Data System (ADS)

Meher Abhinav, E.; Sundararaj, Anuraj; Gopalakrishnan, Chandrasekaran; Kasmir Raja, S. V.; Chokhra, Saurabh

2017-11-01

In this work, chair like fully hydrogenated germanane (CGeH) nano-ribbon 6 nm short channel double gate field effect transistor (DG-FET) has been modeled and the impact of strain on the I-V characteristics of CGeH channel has been examined. The bond lengths, binding and formation energies of various hydrogenated geometries of buckled germanane channel were calculated using local density approximation (LDA) with Perdew-Zunger (PZ) and generalized gradient approximation (GGA) with Perdew Burke Ernzerhof (PBE) parameterization. From four various geometries, chair like structure is found to be more stable compared to boat like obtuse, stiruup structure and table like structure. The bandgap versus width, bandgap versus strain characteristics and I-V characteristics had been analyzed at room temperature using density functional theory (DFT). Using self consistent calculation it was observed that the electronic properties of nano-ribbon is independent of length and band structure, but dependent on edge type, strain [Uni-axial (ɛ xx ), bi-axial (ɛ xx   =  ɛ yy )] and width of the ribbon. The strain engineered hydrogenated germanane (GeH) showed wide direct bandgap (2.3 eV) which could help to build low noise electronic devices that operates at high frequencies. The observed bi-axial compression has high impact on the device transport characteristics with peak to valley ratio (PVR) of 2.14 and 380% increase in peak current compared to pristine CGeH device. The observed strain in CGeH DG-FET could facilitate in designing novel multiple-logic memory devices due to multiple negative differential resistance (NDR) regions.

Erbium-doped zinc-oxide waveguide amplifiers for hybrid photonic integrated circuits

NASA Astrophysics Data System (ADS)

O'Neal, Lawrence; Anthony, Deion; Bonner, Carl; Geddis, Demetris

2016-02-01

CMOS logic circuits have entered the sub-100nm regime, and research is on-going to investigate the quantum effects that are apparent at this dimension. To avoid some of the constraints imposed by fabrication, entropy, energy, and interference considerations for nano-scale devices, many have begun designing hybrid and/or photonic integrated circuits. These circuits consist of transistors, light emitters, photodetectors, and electrical and optical waveguides. As attenuation is a limiting factor in any communications system, it is advantageous to integrate a signal amplifier. There are numerous examples of electrical amplifiers, but in order to take advantage of the benefits provided by optically integrated systems, optical amplifiers are necessary. The erbium doped fiber amplifier is an example of an optical amplifier which is commercially available now, but the distance between the amplifier and the device benefitting from amplification can be decreased and provide greater functionality by providing local, on-chip amplification. Zinc oxide is an attractive material due to its electrical and optical properties. Its wide bandgap (≍3.4 eV) and high refractive index (≍2) make it an excellent choice for integrated optics systems. Moreover, erbium doped zinc oxide (Er:ZnO) is a suitable candidate for optical waveguide amplifiers because of its compatibility with semiconductor processing technology, 1.54 μm luminescence, transparency, low resistivity, and amplification characteristics. This research presents the characterization of radio frequency magnetron sputtered Er:ZnO, the design and fabrication of integrated waveguide amplifiers, and device analysis.

Glass-fiber-based neutron detectors for high- and low-flux environments

NASA Astrophysics Data System (ADS)

Bliss, Mary; Brodzinski, Ronald L.; Craig, Richard A.; Geelhood, Bruce D.; Knopf, Michael A.; Miley, Harry S.; Perkins, Richard W.; Reeder, Paul L.; Sunberg, Debra S.; Warner, Ray A.; Wogman, Ned A.

1995-09-01

Pacific Northwest Laboratory (PNL) has fabricated cerium-activated lithium silicate scintillating fibers via a hot-downdraw process. These fibers typically have a operational transmission length (e(superscript -1) length) of greater than 2 meters. This permits the fabrication of devices which were not possible to consider. Scintillating fibers permit conformable devices, large-area devices, and extremely small devices; in addition, as the thermal-neutron sensitive elements in a fast neutron detection system, scintillating fibers can be dispersed within moderator, improving neutron economy, over that possible with commercially available (superscript 3)He or BF(subscript 3) proportional counters. These fibers can be used for national-security applications, in medical applications, in the nuclear-power industry, and for personnel protection at experimental facilities. Data are presented for devices based on single fibers and devices made up of ribbons containing many fibers under high-and low-flux conditions.

Sol-gel processing to form doped sol-gel monoliths inside hollow core optical fiber and sol-gel core fiber devices made thereby

NASA Technical Reports Server (NTRS)

Shaw, Harry C. (Inventor); Ott, Melanie N. (Inventor); Manuel, Michele V. (Inventor)

2002-01-01

A process of fabricating a fiber device includes providing a hollow core fiber, and forming a sol-gel material inside the hollow core fiber. The hollow core fiber is preferably an optical fiber, and the sol-gel material is doped with a dopant. Devices made in this manner includes a wide variety of sensors.

STM/STS Study of Surface Modification Effect on Bandgap Structure of Ti2C with -OH, -F, and -H

NASA Astrophysics Data System (ADS)

Jung, Seong Jun; Lai, Shen; Jeong, Taehwan; Lee, Sungjoo; Song, Young Jae

In this presentation, we present Scanning Tunneling Microscopy (STM) and Spectroscopy (STS) study of bandgap structures of surface-modified Ti2C with -OH, -F, and -O in atomic scale. Since the discovery of new two dimensional (2D) materials like graphene, various 2D materials including transition metal dichalcogenide (TMD) have been intensively investigated. There are, however, still scientific issues to apply them to the device fabrications for controlling the appropriate bandgap structure with high field effect mobility. Recently another 2D materials of transition metal carbide (TMC), Ti2CTx with modifiable surface group Tx(-OH, -F, and -O) was suggested. [S. Lai et. al, Nanoscale (2015), DOI: 10.1039/C5NR06513E]. This 2D material shows that the mobility at room temperature is less sensitive to the measured transport bandgap, which can imply that Ti2CTx can be a strong candidate of 2D TMC for application to the future electronic devices. Surface modification on the electronic structure of Ti2C by -OH, -F, and -O is, therefore, investigated by STM and STS in atomic scale. More scientific results will be further discussed in the presentation. This research was supported by Basic Science Research Program through the National Research Foundation of Korea funded by the Korean government (Grant Numbers: 2015R1A1A1A05027585, 2011­0030046, IBS- R011­D1, 2014M3C1A3053024 and 2015M3A7B4050455).

21 CFR 895.101 - Prosthetic hair fibers.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Prosthetic hair fibers. 895.101 Section 895.101 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES BANNED DEVICES Listing of Banned Devices § 895.101 Prosthetic hair fibers. Prosthetic hair fibers are devices intended for implantation...

21 CFR 872.4620 - Fiber optic dental light.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Fiber optic dental light. 872.4620 Section 872...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4620 Fiber optic dental light. (a) Identification. A fiber optic dental light is a device that is a light, usually AC-powered, that consists of glass or...

21 CFR 872.4620 - Fiber optic dental light.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Fiber optic dental light. 872.4620 Section 872...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4620 Fiber optic dental light. (a) Identification. A fiber optic dental light is a device that is a light, usually AC-powered, that consists of glass or...

21 CFR 872.4620 - Fiber optic dental light.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Fiber optic dental light. 872.4620 Section 872...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4620 Fiber optic dental light. (a) Identification. A fiber optic dental light is a device that is a light, usually AC-powered, that consists of glass or...

21 CFR 872.4620 - Fiber optic dental light.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Fiber optic dental light. 872.4620 Section 872...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4620 Fiber optic dental light. (a) Identification. A fiber optic dental light is a device that is a light, usually AC-powered, that consists of glass or...

21 CFR 872.4620 - Fiber optic dental light.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Fiber optic dental light. 872.4620 Section 872...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4620 Fiber optic dental light. (a) Identification. A fiber optic dental light is a device that is a light, usually AC-powered, that consists of glass or...

Precision Controlled Carbon Materials for Next-Generation Optoelectronic and Photonic Devices

DTIC Science & Technology

2018-01-08

absorbers. Semiconducting nanotubes are strong, dye-like absorbers with bandgaps tunable to the ideal for single-junction solar PV ~1.3 eV or deeper...semiconducting carbon nanotube-based photovoltaic solar cells and photodetectors; (2) high-performance carbon nanotube electronics; (3) stretchable...photovoltaic solar cells and photodetectors Semiconducting carbon nanotubes are attractive absorbers for photovoltaic and photodetector devices. The

Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.

PubMed

Li, Wen; Guo, Fengning; Ling, Haifeng; Liu, Hui; Yi, Mingdong; Zhang, Peng; Wang, Wenjun; Xie, Linghai; Huang, Wei

2018-01-01

In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG 3 ) is reported. The WG 3 NSs are prepared from phase separation by spin-coating blend solutions of WG 3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG 3 film, the device based on WG 3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 4 s), and reliable switching properties. A quantitative study of the WG 3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG 3 NSs and pentacene layer. This versatile solution-processing approach to preparing WG 3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Performance evaluation of electro-optic effect based graphene transistors

NASA Astrophysics Data System (ADS)

Gupta, Gaurav; Abdul Jalil, Mansoor Bin; Yu, Bin; Liang, Gengchiau

2012-09-01

Despite the advantages afforded by the unique electronic properties of graphene, the absence of a bandgap has limited its applicability in logic devices. This has led to a study on electro-optic behavior in graphene for novel device operations, beyond the conventional field effect, to meet the requirements of ultra-low power and high-speed logic transistors. Recently, two potential designs have been proposed to leverage on this effect and open a virtual bandgap for ballistic transport in the graphene channel. The first one implements a barrier in the centre of the channel, whereas the second incorporates a tilted gate junction. In this paper, we computationally evaluate the relative device performance of these two designs, in terms of subthreshold slope (SS) and ION/IOFF ratio under different temperature and voltage bias, for a defect-free graphene channel. Our calculations employ pure optical modeling for low field electron transport under the constraints of device anatomy. The calculated results show that the two designs are functionally similar and are able to provide SS smaller than 60 mV per decade. Both designs show similar device performance but marginally top one another under different operating constraints. Our results could serve as a guide to circuit designers in selecting an appropriate design as per their system specifications and requirements.

Rational material, interface, and device engineering for high-performance polymer and perovskite solar cells (Presentation Recording)

NASA Astrophysics Data System (ADS)

Jen, Alex K.

2015-10-01

The performance of polymer and hybrid solar cells is also strongly dependent on their efficiency in harvesting light, exciton dissociation, charge transport, and charge collection at the metal/organic/metal oxide or the metal/perovskite/metal oxide interfaces. Our laboratory employs a molecular engineering approach to develop processible low band-gap polymers with high charge carrier mobility that can enhance power conversion efficiency of the single junction solar cells to values as high as ~11%. We have also developed several innovative strategies to modify the interface of bulk-heterojunction devices and create new device architectures to fully explore their potential for solar applications. In this talk, the integrated approach of combining material design, interface, and device engineering to significantly improve the performance of polymer and hybrid perovskite photovoltaic cells will be discussed. Specific emphasis will be placed on the development of low band-gap polymers with reduced reorganizational energy and proper energy levels, formation of optimized morphology of active layer, and minimized interfacial energy barriers using functional conductive surfactants. At the end, several new device architectures and optical engineering strategies to make tandem cells and semitransparent solar cells will be discussed to explore the full promise of polymer and perovskite hybrid solar cells.

Performance evaluation of electro-optic effect based graphene transistors.

PubMed

Gupta, Gaurav; Jalil, Mansoor Bin Abdul; Yu, Bin; Liang, Gengchiau

2012-10-21

Despite the advantages afforded by the unique electronic properties of graphene, the absence of a bandgap has limited its applicability in logic devices. This has led to a study on electro-optic behavior in graphene for novel device operations, beyond the conventional field effect, to meet the requirements of ultra-low power and high-speed logic transistors. Recently, two potential designs have been proposed to leverage on this effect and open a virtual bandgap for ballistic transport in the graphene channel. The first one implements a barrier in the centre of the channel, whereas the second incorporates a tilted gate junction. In this paper, we computationally evaluate the relative device performance of these two designs, in terms of subthreshold slope (SS) and I(ON)/I(OFF) ratio under different temperature and voltage bias, for a defect-free graphene channel. Our calculations employ pure optical modeling for low field electron transport under the constraints of device anatomy. The calculated results show that the two designs are functionally similar and are able to provide SS smaller than 60 mV per decade. Both designs show similar device performance but marginally top one another under different operating constraints. Our results could serve as a guide to circuit designers in selecting an appropriate design as per their system specifications and requirements.

Solution processable and optically switchable 1D photonic structures.

PubMed

Paternò, Giuseppe M; Iseppon, Chiara; D'Altri, Alessia; Fasanotti, Carlo; Merati, Giulia; Randi, Mattia; Desii, Andrea; Pogna, Eva A A; Viola, Daniele; Cerullo, Giulio; Scotognella, Francesco; Kriegel, Ilka

2018-02-23

We report the first demonstration of a solution processable, optically switchable 1D photonic crystal which incorporates phototunable doped metal oxide nanocrystals. The resulting device structure shows a dual optical response with the photonic bandgap covering the visible spectral range and the plasmon resonance of the doped metal oxide the near infrared. By means of a facile photodoping process, we tuned the plasmonic response and switched effectively the optical properties of the photonic crystal, translating the effect from the near infrared to the visible. The ultrafast bandgap pumping induces a signal change in the region of the photonic stopband, with recovery times of several picoseconds, providing a step toward the ultrafast optical switching. Optical modeling uncovers the importance of a complete modeling of the variations of the dielectric function of the photodoped material, including the high frequency region of the Drude response which is responsible for the strong switching in the visible after photodoping. Our device configuration offers unprecedented tunability due to flexibility in device design, covering a wavelength range from the visible to the near infrared. Our findings indicate a new protocol to modify the optical response of photonic devices by optical triggers only.

Development of 1.0- to 1.4-Micrometer Heterojunction LEDs.

DTIC Science & Technology

1980-04-01

dispersion of silica fibers decreases with increasing wavelength (2]. This is due to the wavelength dependence of the refractive index , which predicts...shown here is sufficient to provide strong electron confine- ment in the low-energy material (InGaAs). A similar difference in refractive index for these...bandgap and refractive - index steps discussed above form the basis of fabricating heterojunction emitters (both edge-emitting LEDs and lasers

Medium Bandgap Conjugated Polymer for High Performance Polymer Solar Cells Exceeding 9% Power Conversion Efficiency.

PubMed

Jung, Jae Woong; Liu, Feng; Russell, Thomas P; Jo, Won Ho

2015-12-02

Two medium-bandgap polymers composed of benzo[1,2-b:4,5-b']dithiohpene and 2,1,3-benzothiadiazole with 6-octyl-thieno[3,2-b]thiophene as a π-bridge unit are synthesized and their photovoltaic properties are analyzed. The two polymers have deep highest occupied molecular orbital energy levels, high crystallinity, optimal bulk-heterojunction morphology, and efficient charge transport, resulting in a power conversion efficiency of as high as 9.44% for a single-junction polymer solar-cell device. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Regioregular narrow-bandgap-conjugated polymers for plastic electronics

NASA Astrophysics Data System (ADS)

Ying, Lei; Huang, Fei; Bazan, Guillermo C.

2017-03-01

Progress in the molecular design and processing protocols of semiconducting polymers has opened significant opportunities for the fabrication of low-cost plastic electronic devices. Recent studies indicate that field-effect transistors and organic solar cells fabricated using narrow-bandgap regioregular polymers with translational symmetries in the direction of the backbone vector often outperform those containing analogous regiorandom polymers. This review addresses the cutting edge of regioregularity chemistry, in particular how to control the spatial distribution in the molecular structures and how this order translates to more ordered bulk morphologies. The effect of regioregularity on charge transport and photovoltaic properties is also outlined.

Fabrication and characterization of a germanium nanowire light emitting diode

NASA Astrophysics Data System (ADS)

Greil, Johannes; Bertagnolli, Emmerich; Salem, Bassem; Baron, Thierry; Gentile, Pascal; Lugstein, Alois

2017-12-01

In this letter, we demonstrate the feasibility of a germanium nanowire light emitting diode as a reasonable approach for downscaling of CMOS compatible light sources. We show room-temperature direct bandgap electroluminescence from axial p-n junction nanowire devices. The electron population in the Γ valley, necessary for direct bandgap emission, is achieved by high injection current densities. Carrier temperature is consistently found to be higher than the lattice temperature, indicating inhibited carrier cooling in small diameter wires. Strong polarization of the emission parallel to the nanowire axis is observed and attributed to dielectric contrast phenomena.

Optoelectronic Quality and Stability of Hybrid Perovskites from MAPbI 3 to MAPbI 2 Br Using Composition Spread Libraries

DOE PAGES

Braly, Ian L.; Hillhouse, Hugh W.

2015-12-22

The development of stable high-bandgap hybrid perovskites (HPs) with high optoelectronic quality may enable tandem solar cells with power conversion efficiencies approaching 30%. The halide composition of HPs has been observed to effect bandgap, carrier lifetime, and material stability. Here we report optoelectronic quality and stability under illumination of thousands of compositions ranging from the pure iodide (CH3NH3PbI3) to the diiodomonobromide (CH3NH3PbI2Br). Hyperspectral maps of steady-state absolute intensity photoluminescence (AIPL) are used to determine the quasi-Fermi level splitting (QFLS) at each point after synthesis. The QFLS upon first illumination increases with bandgap and reaches a maximum of 1.27 eV undermore » 1 sun illumination intensity for a bandgap of 1.75 eV. However, the optoelectronic quality (χ), defined as the ratio of the QFLS to the maximum theoretical QFLS for bandgap, decreases with bandgap from around 88% for 1.60 eV bandgap down to 82% for 1.84 eV bandgap. Further, we show that a reversible light induced defect forms that reduces the optoelectronic quality, particularly for high-bandgap materials. Composition analysis shows that the halide to lead ratio, (I + Br)/Pb, decreases from 3 for the pure iodide to 2.5 for the diiodomonobromide, suggesting a role of halide vacancies or halide substitution defects in the light-induced instability for this synthesis route. Even with the light-induced defect, a stable QFLS of about 1.17 eV is possible. Comparing our QFLS to Voc values from HP devices reported in the literature indicates that higher open circuit voltages are possible but may require optimization of band alignment. Further, the spectral shape of the PL emission is found to be more commensurate with Franz–Keldysh broadening from local electric fields or from a screened Thomas–Fermi density of states (as opposed to a joint density of states due to Urbach disorder).« less

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

PubMed

Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

2014-12-21

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

Four-terminal circuit element with photonic core

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sampayan, Stephen

A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated basedmore » on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.« less

Sub-5 nm, globally aligned graphene nanoribbons on Ge(001)

DOE PAGES

Kiraly, Brian; Mannix, Andrew J.; Jacobberger, Robert M.; ...

2016-05-23

Graphene nanoribbons (GNRs) hold great promise for future electronics because of their edge and width dependent electronic bandgaps and exceptional transport properties. While significant progress toward such devices has been made, the field has been limited by difficulties achieving narrow widths, global alignment, and atomically pristine GNR edges on technologically relevant substrates. A recent advance has challenged these limits by using Ge(001) substrates to direct the bottom-up growth of GNRs with nearly pristine armchair edges and widths near ~10 nm via atmospheric pressure chemical vapor deposition. In this work, we extend the growth of GNRs on Ge(001) to ultra-high vacuummore » conditions and realize GNRs narrower than 5 nm. Armchair graphene nanoribbons directed along the Ge <110> surface directions are achieved with excellent width control and relatively large bandgaps. As a result, the bandgap magnitude and electronic uniformity make these new materials excellent candidates for future developments in nanoelectronics.« less

Recent progress in GeSn growth and GeSn-based photonic devices

NASA Astrophysics Data System (ADS)

Zheng, Jun; Liu, Zhi; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

2018-06-01

The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content exceeds 6%. It shows great potential for laser use in optoelectronic integration circuits (OEIC) on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photodetectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the monolithic integration of Si photonic circuits by the complementary metal–oxide–semiconductor (CMOS) technology. Project supported by the Beijing Natural Science Foundation (No. 4162063) and the Youth Innovation Promotion Association of CAS (No. 2015091).

III-V arsenide-nitride semiconductor

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

2000-01-01

III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Methods for forming group III-arsenide-nitride semiconductor materials

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

2002-01-01

Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Methods for forming group III-V arsenide-nitride semiconductor materials

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

2000-01-01

Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Exchange and correlation energies in silicene illuminated by circularly polarized light

NASA Astrophysics Data System (ADS)

Iurov, Andrii; Gumbs, Godfrey; Huang, Danhong

2017-05-01

Both the exchange and correlation energies due to Coulomb and spin-orbit interactions in a monolayer silicene with a buckled honeycomb lattice are calculated. We use Lindhard formalism for the polarizability. Many-body effects in such Dirac-like materials are studied with an emphasis on the influence of on-site potential difference ? between two sublattices. Our calculations have shown that the presence of an energy bandgap ? leads to a reduced exchange energy, which has some potential applications, such as, tunability of entanglement of electrons for quantum information devices. Since silicene acquires two energy gaps associated with up- and down-pseudospin, we can adjust its electronic properties in a wider range by varying these two bandgaps as compared to graphene. Another way to tune silicene electronic properties is through impurity doping. Our numerical results demonstrate the dependence of exchange and correlation energies on the energy bandgaps, doping and temperature under circularly polarized light.

Semiconductor superlattice photodetectors

NASA Technical Reports Server (NTRS)

Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

1984-01-01

A superlattice photomultiplier and a photodetector based on the real space transfer mechanism were studied. The wavelength for the first device is of the order of a micron or flexible corresponding to the bandgap absorption in a semiconductor. The wavelength for the second device is in the micron range (about 2 to 12 microns) corresponding to the energy of the conduction band edge discontinuity between an Al/(sub x)Ga(sub 1-x)As and GaAs interface. Both devices are described.

Electro-optical SLS devices for operating at new wavelength ranges

DOEpatents

Osbourn, Gordon C.

1986-01-01

An intrinsic semiconductor electro-optical device includes a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8-12 um. The junction consists of a strained-layer superlattice of alternating layers of two different III-V semiconductors having mismatched lattice constants when in bulk form. A first set of layers is either InAs.sub.1-x Sb.sub.x (where x is aobut 0.5 to 0.7) or In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y (where x and y are chosen such that the bulk bandgap of the resulting layer is about the same as the minimum bandgap in the In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y family). The second set of layers has a lattice constant larger than the lattice constant of the layers in the first set.

Electric field induced spin-polarized current

DOEpatents

Murakami, Shuichi; Nagaosa, Naoto; Zhang, Shoucheng

2006-05-02

A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.

High-frequency electromechanical resonators based on thin GaTe

NASA Astrophysics Data System (ADS)

Chitara, Basant; Ya'akobovitz, Assaf

2017-10-01

Gallium telluride (GaTe) is a layered material, which exhibits a direct bandgap (˜1.65 eV) regardless of its thickness and therefore holds great potential for integration as a core element in stretchable optomechanical and optoelectronic devices. Here, we characterize and demonstrate the elastic properties and electromechanical resonators of suspended thin GaTe nanodrums. We used atomic force microscopy to extract the Young’s modulus of GaTe (average value ˜39 GPa) and to predict the resonance frequencies of suspended GaTe nanodrums of various geometries. Electromechanical resonators fabricated from suspended GaTe revealed fundamental resonance frequencies in the range of 10-25 MHz, which closely match predicted values. Therefore, this study paves the way for creating a new generation of GaTe based nanoelectromechanical devices with a direct bandgap vibrating element, which can serve as optomechanical sensors and actuators.

Integrated all-optical logic discriminators based on plasmonic bandgap engineering

PubMed Central

Lu, Cuicui; Hu, Xiaoyong; Yang, Hong; Gong, Qihuang

2013-01-01

Optical computing uses photons as information carriers, opening up the possibility for ultrahigh-speed and ultrawide-band information processing. Integrated all-optical logic devices are indispensible core components of optical computing systems. However, up to now, little experimental progress has been made in nanoscale all-optical logic discriminators, which have the function of discriminating and encoding incident light signals according to wavelength. Here, we report a strategy to realize a nanoscale all-optical logic discriminator based on plasmonic bandgap engineering in a planar plasmonic microstructure. Light signals falling within different operating wavelength ranges are differentiated and endowed with different logic state encodings. Compared with values previously reported, the operating bandwidth is enlarged by one order of magnitude. Also the SPP light source is integrated with the logic device while retaining its ultracompact size. This opens up a way to construct on-chip all-optical information processors and artificial intelligence systems. PMID:24071647

Band Tailing and Deep Defect States in CH 3NH 3Pb(I 1–xBr x) 3 Perovskites As Revealed by Sub-Bandgap Photocurrent

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutter-Fella, Carolin M.; Miller, D. Westley; Ngo, Quynh P.

Organometal halide perovskite semiconductors have emerged as promising candidates for optoelectronic applications because of the outstanding charge carrier transport properties, achieved with low-temperature synthesis. In this paper, we present highly sensitive sub-bandgap external quantum efficiency (EQE) measurements of Au/spiro-OMeTAD/CH 3NH 3Pb(I 1–xBr x) 3/TiO 2/FTO/glass photovoltaic devices. The room-temperature spectra show exponential band tails with a sharp onset characterized by low Urbach energies (E u) over the full halide composition space. The Urbach energies are 15–23 meV, lower than those for most semiconductors with similar bandgaps (especially with E g > 1.9 eV). Intentional aging of CH 3NH 3Pb(I 1–xBrmore » x) 3 for up to 2300 h, reveals no change in E u, despite the appearance of the PbI 2 phase due to decomposition, and confirms a high degree of crystal ordering. Moreover, sub-bandgap EQE measurements reveal an extended band of sub-bandgap electronic states that can be fit with one or two point defects for pure CH 3NH 3PbI 3 or mixed CH 3NH 3Pb(I 1–xBr x) 3 compositions, respectively. Finally, the study provides experimental evidence of defect states close to the midgap that could impact photocarrier recombination and energy conversion efficiency in higher bandgap CH 3NH 3Pb(I 1–xBr x) 3 alloys.« less

Band Tailing and Deep Defect States in CH 3NH 3Pb(I 1–xBr x) 3 Perovskites As Revealed by Sub-Bandgap Photocurrent

DOE PAGES

Sutter-Fella, Carolin M.; Miller, D. Westley; Ngo, Quynh P.; ...

2017-02-15

Organometal halide perovskite semiconductors have emerged as promising candidates for optoelectronic applications because of the outstanding charge carrier transport properties, achieved with low-temperature synthesis. In this paper, we present highly sensitive sub-bandgap external quantum efficiency (EQE) measurements of Au/spiro-OMeTAD/CH 3NH 3Pb(I 1–xBr x) 3/TiO 2/FTO/glass photovoltaic devices. The room-temperature spectra show exponential band tails with a sharp onset characterized by low Urbach energies (E u) over the full halide composition space. The Urbach energies are 15–23 meV, lower than those for most semiconductors with similar bandgaps (especially with E g > 1.9 eV). Intentional aging of CH 3NH 3Pb(I 1–xBrmore » x) 3 for up to 2300 h, reveals no change in E u, despite the appearance of the PbI 2 phase due to decomposition, and confirms a high degree of crystal ordering. Moreover, sub-bandgap EQE measurements reveal an extended band of sub-bandgap electronic states that can be fit with one or two point defects for pure CH 3NH 3PbI 3 or mixed CH 3NH 3Pb(I 1–xBr x) 3 compositions, respectively. Finally, the study provides experimental evidence of defect states close to the midgap that could impact photocarrier recombination and energy conversion efficiency in higher bandgap CH 3NH 3Pb(I 1–xBr x) 3 alloys.« less

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

NASA Astrophysics Data System (ADS)

Zolnai, Z.; Toporkov, M.; Volk, J.; Demchenko, D. O.; Okur, S.; Szabó, Z.; Özgür, Ü.; Morkoç, H.; Avrutin, V.; Kótai, E.

2015-02-01

The atomic composition with less than 1-2 atom% uncertainty was measured in ternary BeZnO and quaternary BeMgZnO alloys using a combination of nondestructive Rutherford backscattering spectrometry with 1 MeV He+ analyzing ion beam and non-Rutherford elastic backscattering experiments with 2.53 MeV energy protons. An enhancement factor of 60 in the cross-section of Be for protons has been achieved to monitor Be atomic concentrations. Usually the quantitative analysis of BeZnO and BeMgZnO systems is challenging due to difficulties with appropriate experimental tools for the detection of the light Be element with satisfactory accuracy. As it is shown, our applied ion beam technique, supported with the detailed simulation of ion stopping, backscattering, and detection processes allows of quantitative depth profiling and compositional analysis of wurtzite BeZnO/ZnO/sapphire and BeMgZnO/ZnO/sapphire layer structures with low uncertainty for both Be and Mg. In addition, the excitonic bandgaps of the layers were deduced from optical transmittance measurements. To augment the measured compositions and bandgaps of BeO and MgO co-alloyed ZnO layers, hybrid density functional bandgap calculations were performed with varying the Be and Mg contents. The theoretical vs. experimental bandgaps show linear correlation in the entire bandgap range studied from 3.26 eV to 4.62 eV. The analytical method employed should help facilitate bandgap engineering for potential applications, such as solar blind UV photodetectors and heterostructures for UV emitters and intersubband devices.

Design concepts for hot carrier-based detectors and energy converters in the near ultraviolet and infrared

NASA Astrophysics Data System (ADS)

Gong, Tao; Krayer, Lisa; Munday, Jeremy N.

2016-10-01

Semiconductor materials are well suited for power conversion when the incident photon energy is slightly larger than the bandgap energy of the semiconductor. However, for photons with energy significantly greater than the bandgap energy, power conversion efficiencies are low. Further, for photons with energy below the bandgap energy, the absence of absorption results in no power generation. Here, we describe photon detection and power conversion of both high- and low-energy photons using hot carrier effects. For the absorption of high-energy photons, excited electrons and holes have excess kinetic energy that is typically lost through thermalization processes between the carriers and the lattice. However, collection of hot carriers before thermalization allows for reduced power loss. Devices utilizing plasmonic nanostructures or simple three-layer stacks (transparent conductor-insulator-metal) can be used to generate and collect these hot carriers. Alternatively, hot carrier collection from sub-bandgap photons can be possible by forming a Schottky junction with an absorbing metal so that hot carriers generated in the metal can be injected across the semiconductor-metal interface. Such structures enable near-IR detection based on sub-bandgap photon absorption. Further, utilization and optimization of localized surface plasmon resonances can increase optical absorption and hot carrier generation (through plasmon decay). Combining these concepts, hot carrier generation and collection can be exploited over a large range of incident wavelengths spanning the UV, visible, and IR.

All-Graphene Planar Self-Switching MISFEDs, Metal-Insulator-Semiconductor Field-Effect Diodes

PubMed Central

Al-Dirini, Feras; Hossain, Faruque M.; Nirmalathas, Ampalavanapillai; Skafidas, Efstratios

2014-01-01

Graphene normally behaves as a semimetal because it lacks a bandgap, but when it is patterned into nanoribbons a bandgap can be introduced. By varying the width of these nanoribbons this band gap can be tuned from semiconducting to metallic. This property allows metallic and semiconducting regions within a single Graphene monolayer, which can be used in realising two-dimensional (2D) planar Metal-Insulator-Semiconductor field effect devices. Based on this concept, we present a new class of nano-scale planar devices named Graphene Self-Switching MISFEDs (Metal-Insulator-Semiconductor Field-Effect Diodes), in which Graphene is used as the metal and the semiconductor concurrently. The presented devices exhibit excellent current-voltage characteristics while occupying an ultra-small area with sub-10 nm dimensions and an ultimate thinness of a single atom. Quantum mechanical simulation results, based on the Extended Huckel method and Nonequilibrium Green's Function Formalism, show that a Graphene Self-Switching MISFED with a channel as short as 5 nm can achieve forward-to-reverse current rectification ratios exceeding 5000. PMID:24496307

Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

DOEpatents

Charache, Greg W.; Baldasaro, Paul F.; Nichols, Greg J.

1998-01-01

A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eV

Development of High-k Dielectric for Antimonides and a sub 350 degree Celsius III-V pMOSFET Outperforming Germanium

DTIC Science & Technology

2010-12-01

due to BTBT was observed in the surface channel device (Figure 23). Buried channel device moves the maximum E-field due to VGD in the WB cap (Figure...23(inset)) suppressing BTBT which might be the dominant component of IOFF in scaled devices [10]. Lastly, a 4.3% increase in ID was observed when...inset : SS with T). Fig. 21 : Temp Dependence of mobility. Fig. 23 :GIDL due to BTBT seen in surface channel device at 80K. Use of wide bandgap (WB

Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

DOEpatents

Charache, G.W.; Baldasaro, P.F.; Nichols, G.J.

1998-06-23

A thermophotovoltaic energy conversion device and a method for making the device are disclosed. The device includes a substrate formed from a bulk single crystal material having a bandgap (E{sub g}) of 0.4 eV < E{sub g} < 0.7 eV and an emitter fabricated on the substrate formed from one of a p-type or an n-type material. Another thermophotovoltaic energy conversion device includes a host substrate formed from a bulk single crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers. 12 figs.

Multimaterial Acoustic Fibers

NASA Astrophysics Data System (ADS)

Chocat, Noemie

The emergence of multimaterial fibers that combine a multiplicity of solid materials with disparate electrical, optical, and mechanical properties into a single fiber presents new opportunities for extending fiber applications well beyond optical transmission. Fiber reflectors, thermal detectors, photodetectors, chemical sensors, surface-emitting fiber lasers, fiber diodes, and other functional fiber devices have been demonstrated with this approach. Yet, throughout this development and indeed the development of fibers in general, a key premise has remained unchanged : that fibers are essentially static devices incapable of controllably changing their properties at high frequencies. Unique opportunities would arise if a rapid, electrically-driven mechanism for changing fiber properties existed. A wide spectrum of hitherto passive fiber devices could at once become active with applications spanning electronics, mechanics, acoustics, and optics, with the benefits of large surface-area, structural robustness, and mechanical flexibility. This thesis addresses the challenges and opportunities associated with the realization of electromechanical transduction in fibers through the integration of internal piezoelectric and electrostrictive domains. The fundamental challenges related to the fabrication of piezoelectric devices in fiber form are analyzed from a materials perspective, and candidate materials and geometries are selected that are compatible with the thermal drawing process. The first realization of a thermally drawn piezoelectric fiber device is reported and its piezoelectric response is established over a wide range of frequencies. The acoustic properties of piezoelectric fiber devices are characterized and related to their mechanical and geometric properties. Collective effects in multi-fiber constructs are discussed and demonstrated by the realization of a linear phased array of piezoelectric fibers capable of acoustic beam steering. High strain actuation capabilities in a fiber are demonstrated based on the integration of a highly electrostrictive relaxor ferroelectric polymer. The potential of this approach to realize integrated microelectromechanical systems in fibers is illustrated by the fabrication of a hybrid fiber comprising an electrostrictive device and an adjacent Fabry-Perot optical filter. Amplitude modulation of the light reflected from the Fabry-Perot cavity is demonstrated through electric field induced tuning of the cavity resonance. (Copies available exclusively from MIT Libraries, libraries.mit.edu/docs - docs@mit.edu)

A polymer tandem solar cell with 10.6% power conversion efficiency.

PubMed

You, Jingbi; Dou, Letian; Yoshimura, Ken; Kato, Takehito; Ohya, Kenichiro; Moriarty, Tom; Emery, Keith; Chen, Chun-Chao; Gao, Jing; Li, Gang; Yang, Yang

2013-01-01

An effective way to improve polymer solar cell efficiency is to use a tandem structure, as a broader part of the spectrum of solar radiation is used and the thermalization loss of photon energy is minimized. In the past, the lack of high-performance low-bandgap polymers was the major limiting factor for achieving high-performance tandem solar cell. Here we report the development of a high-performance low bandgap polymer (bandgap <1.4 eV), poly[2,7-(5,5-bis-(3,7-dimethyloctyl)-5H-dithieno[3,2-b:2',3'-d]pyran)-alt-4,7-(5,6-difluoro-2,1,3-benzothia diazole)] with a bandgap of 1.38 eV, high mobility, deep highest occupied molecular orbital. As a result, a single-junction device shows high external quantum efficiency of >60% and spectral response that extends to 900 nm, with a power conversion efficiency of 7.9%. The polymer enables a solution processed tandem solar cell with certified 10.6% power conversion efficiency under standard reporting conditions (25 °C, 1,000 Wm(-2), IEC 60904-3 global), which is the first certified polymer solar cell efficiency over 10%.

A polymer tandem solar cell with 10.6% power conversion efficiency

PubMed Central

You, Jingbi; Dou, Letian; Yoshimura, Ken; Kato, Takehito; Ohya, Kenichiro; Moriarty, Tom; Emery, Keith; Chen, Chun-Chao; Gao, Jing; Li, Gang; Yang, Yang

2013-01-01

An effective way to improve polymer solar cell efficiency is to use a tandem structure, as a broader part of the spectrum of solar radiation is used and the thermalization loss of photon energy is minimized. In the past, the lack of high-performance low-bandgap polymers was the major limiting factor for achieving high-performance tandem solar cell. Here we report the development of a high-performance low bandgap polymer (bandgap <1.4 eV), poly[2,7-(5,5-bis-(3,7-dimethyloctyl)-5H-dithieno[3,2-b:2′,3′-d]pyran)-alt-4,7-(5,6-difluoro-2,1,3-benzothia diazole)] with a bandgap of 1.38 eV, high mobility, deep highest occupied molecular orbital. As a result, a single-junction device shows high external quantum efficiency of >60% and spectral response that extends to 900 nm, with a power conversion efficiency of 7.9%. The polymer enables a solution processed tandem solar cell with certified 10.6% power conversion efficiency under standard reporting conditions (25 °C, 1,000 Wm−2, IEC 60904-3 global), which is the first certified polymer solar cell efficiency over 10%. PMID:23385590

Miniaturization and automation of an internally cooled coated fiber device.

PubMed

Chen, Yong; Pawliszyn, Janusz

2006-07-15

The internally cooled coated fiber device was miniaturized to allow its direct introduction into a gas chromatography injector, while maintaining a reasonable lifetime of the septum. The device was robust, and its fiber, which was accommodated in an 18-gauge needle, was reproducibly used for more than 100 injections without any coating failure. The fiber temperature was controlled within 5 degrees C of the preset value by use of a temperature controller, a solenoid valve, and stainless steel tubings with different inner diameter. The device was mounted and used on the CTC CombiPAL autosampler with minor modifications, such as enlarging the hole of the needle guide of the autosampler and coupling the temperature control system of the device to the autosampler through a logic circuit. The device was validated with the back equilibration of hydrocarbons preloaded in the fiber in air. The automation of the internally cooled coated fiber device provided the feasibility of high throughput for the analysis of analytes in complex matrixes that required simultaneous heating of the sample matrixes and cooling of the fiber coating.

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

NASA Astrophysics Data System (ADS)

Fujita, Shizuo; Oda, Masaya; Kaneko, Kentaro; Hitora, Toshimi

2016-12-01

The recent progress and development of corundum-structured III-oxide semiconductors are reviewed. They allow bandgap engineering from 3.7 to ∼9 eV and function engineering, leading to highly durable electronic devices and deep ultraviolet optical devices as well as multifunctional devices. Mist chemical vapor deposition can be a simple and safe growth technology and is advantageous for reducing energy and cost for the growth. This is favorable for the wide commercial use of devices at low cost. The III-oxide semiconductors are promising candidates for new devices contributing to sustainable social, economic, and technological development for the future.

FY 2016 Research Highlights

DOE Office of Scientific and Technical Information (OSTI.GOV)

This fact sheet summarizes the research highlights for the Clean Energy Manufacturing Analysis Center (CEMAC) for Fiscal Year 2106. Topics covered include additive manufacturing for the wind industry, biomass-based chemicals substitutions, carbon fiber manufacturing facility siting, geothermal power plant turbines, hydrogen refueling stations, hydropower turbines, LEDs and lighting, light-duty automotive lithium-ion cells, magnetocaloric refrigeration, silicon carbide power electronics for variable frequency motor drives, solar photovoltaics, and wide bandgap semiconductor opportunities in power electronics.

Optimization of TM-Doped Phosphosilicate Glass for High Power Fiber Lasers

DTIC Science & Technology

2016-04-28

During the program, we have set up a test facility for Tm-doped fiber lasers with pump power of 300W at 790nm. We have fabricated a large number...efficiency. Our results show the OH level in our fabrication process is adequate. We have found there is evidence of high background loss at ~2µm being...Tower……………………………………………………………………………………………………………5 Photonic bandgap fiber fabrications ……………………………………………………………………………………………6 RESULTS AND DISCUSSIONS

Black phosphorus: a two-dimension saturable absorption material for mid-infrared Q-switched and mode-locked fiber lasers

PubMed Central

Li, Jianfeng; Luo, Hongyu; Zhai, Bo; Lu, Rongguo; Guo, Zhinan; Zhang, Han; Liu, Yong

2016-01-01

Black phosphorus (BP) as a novel class of two-dimension (2D) materials has recently attracted enormous attention as a result of its unique physical and chemical features. The remarkably strong light-matter interaction and tunable direct band-gap at a wide range make it an ideal candidate especially in the mid-infrared wavelength region as the saturable absorber (SA). In this paper, the simple and effective liquid phase exfoliation (LPE) method was used to fabricate BP. By introducing the same BP SA into two specifically designed rare earth ions doped fluoride fiber lasers at mid-infrared wavebands, Q-switching with the pulse energy of 4.93 μJ and mode-locking with the pulse duration of 8.6 ps were obtained, respectively. The operation wavelength of ~2970 nm for generated pulse is the reported longest wavelength for BP SA based fiber lasers. PMID:27457338

Ultrashort pulse generation in mode-locked erbium-doped fiber lasers with tungsten disulfide saturable absorber

NASA Astrophysics Data System (ADS)

Liu, Mengli; Liu, Wenjun; Pang, Lihui; Teng, Hao; Fang, Shaobo; Wei, Zhiyi

2018-01-01

Tungsten disulfide (WS2), as one of typical transition metal dichalcogenides with the characteristics of strong nonlinear polarization and wide bandgap, has been widely used in such fields as biology and optoelectronics. With the magnetron sputtering technique, the saturable absorber (SA) is prepared by depositing WS2 and Au film on the tapered fiber. The heat elimination and damage threshold can be improved for the WS2 SA with evanescent field interaction. Besides, the Au film is deposited on the surface of the WS2 film to improve their reliability and avoid being oxidized. The fabricated SA has a modulation depth of 14.79%. With this SA, we obtain a relatively stable mode-locked fiber laser with the pulse duration of 288 fs, the repetition rate of 41.4 MHz and the signal to noise ratio of 58 dB.

Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rediker, R.H.

1987-06-01

In 1958 the semiconductor device group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. These efforts, in addition to yielding diodes with ns switching speeds, led to the development in early 1962 of diodes which emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rediker, R.H.

1987-06-01

In 1958 the Semiconductor Device Group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. these efforts, in addition to yielding diodes which ns switching speeds, led to the development in early 1962 of diodes that emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.

PubMed

Ovsyannikov, Sergey V; Karkin, Alexander E; Morozova, Natalia V; Shchennikov, Vladimir V; Bykova, Elena; Abakumov, Artem M; Tsirlin, Alexander A; Glazyrin, Konstantin V; Dubrovinsky, Leonid

2014-12-23

An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical interconnection for a polymeric PLC device using simple positional alignment.

PubMed

Ryu, Jin Hwa; Kim, Po Jin; Cho, Cheon Soo; Lee, El-Hang; Kim, Chang-Seok; Jeong, Myung Yung

2011-04-25

This study proposes a simple cost-effective method of optical interconnection between a planar lightwave circuit (PLC) device chip and an optical fiber. It was conducted to minimize and overcome the coupling loss caused by lateral offset which is due to the process tolerance and the dimensional limitation existing between PLC device chips and fiber array blocks with groove structures. A PLC device chip and a fiber array block were simultaneously fabricated in a series of polymer replication processes using the original master. The dimensions (i.e., width and thickness) of the under-clad of the PLC device chip were identical to those of the fiber array block. The PLC device chip and optical fiber were aligned by simple positional control for the vertical direction of the PLC device chip under a particular condition. The insertion loss of the proposed 1 x 2 multimode optical splitter device interconnection was 4.0 dB at 850 nm and the coupling loss was below 0.1 dB compared with single-fiber based active alignment.

Wide Bandgap Semiconductor Nanowires for Electronic, Photonic and Sensing Devices

DTIC Science & Technology

2012-01-05

oxide -based thin film transistors ( TFTs ) have attracted much attention for applications like flexible electronic devices. The...crystals, and ~ 1.5 cm2.V-1.s-1 for pentacene thin films ). A number of groups have demonstrated TFTs based on α- oxide semiconductors such as zinc oxide ...show excellent long-term stability at room temperature. Results: High-performance amorphous (α-) InGaZnO-based thin film transistors ( TFTs )

Maximizing and stabilizing luminescence from halide perovskites with potassium passivation

NASA Astrophysics Data System (ADS)

Abdi-Jalebi, Mojtaba; Andaji-Garmaroudi, Zahra; Cacovich, Stefania; Stavrakas, Camille; Philippe, Bertrand; Richter, Johannes M.; Alsari, Mejd; Booker, Edward P.; Hutter, Eline M.; Pearson, Andrew J.; Lilliu, Samuele; Savenije, Tom J.; Rensmo, Håkan; Divitini, Giorgio; Ducati, Caterina; Friend, Richard H.; Stranks, Samuel D.

2018-03-01

Metal halide perovskites are of great interest for various high-performance optoelectronic applications. The ability to tune the perovskite bandgap continuously by modifying the chemical composition opens up applications for perovskites as coloured emitters, in building-integrated photovoltaics, and as components of tandem photovoltaics to increase the power conversion efficiency. Nevertheless, performance is limited by non-radiative losses, with luminescence yields in state-of-the-art perovskite solar cells still far from 100 per cent under standard solar illumination conditions. Furthermore, in mixed halide perovskite systems designed for continuous bandgap tunability (bandgaps of approximately 1.7 to 1.9 electronvolts), photoinduced ion segregation leads to bandgap instabilities. Here we demonstrate substantial mitigation of both non-radiative losses and photoinduced ion migration in perovskite films and interfaces by decorating the surfaces and grain boundaries with passivating potassium halide layers. We demonstrate external photoluminescence quantum yields of 66 per cent, which translate to internal yields that exceed 95 per cent. The high luminescence yields are achieved while maintaining high mobilities of more than 40 square centimetres per volt per second, providing the elusive combination of both high luminescence and excellent charge transport. When interfaced with electrodes in a solar cell device stack, the external luminescence yield—a quantity that must be maximized to obtain high efficiency—remains as high as 15 per cent, indicating very clean interfaces. We also demonstrate the inhibition of transient photoinduced ion-migration processes across a wide range of mixed halide perovskite bandgaps in materials that exhibit bandgap instabilities when unpassivated. We validate these results in fully operating solar cells. Our work represents an important advance in the construction of tunable metal halide perovskite films and interfaces that can approach the efficiency limits in tandem solar cells, coloured-light-emitting diodes and other optoelectronic applications.

Maximizing and stabilizing luminescence from halide perovskites with potassium passivation.

PubMed

Abdi-Jalebi, Mojtaba; Andaji-Garmaroudi, Zahra; Cacovich, Stefania; Stavrakas, Camille; Philippe, Bertrand; Richter, Johannes M; Alsari, Mejd; Booker, Edward P; Hutter, Eline M; Pearson, Andrew J; Lilliu, Samuele; Savenije, Tom J; Rensmo, Håkan; Divitini, Giorgio; Ducati, Caterina; Friend, Richard H; Stranks, Samuel D

2018-03-21

Metal halide perovskites are of great interest for various high-performance optoelectronic applications. The ability to tune the perovskite bandgap continuously by modifying the chemical composition opens up applications for perovskites as coloured emitters, in building-integrated photovoltaics, and as components of tandem photovoltaics to increase the power conversion efficiency. Nevertheless, performance is limited by non-radiative losses, with luminescence yields in state-of-the-art perovskite solar cells still far from 100 per cent under standard solar illumination conditions. Furthermore, in mixed halide perovskite systems designed for continuous bandgap tunability (bandgaps of approximately 1.7 to 1.9 electronvolts), photoinduced ion segregation leads to bandgap instabilities. Here we demonstrate substantial mitigation of both non-radiative losses and photoinduced ion migration in perovskite films and interfaces by decorating the surfaces and grain boundaries with passivating potassium halide layers. We demonstrate external photoluminescence quantum yields of 66 per cent, which translate to internal yields that exceed 95 per cent. The high luminescence yields are achieved while maintaining high mobilities of more than 40 square centimetres per volt per second, providing the elusive combination of both high luminescence and excellent charge transport. When interfaced with electrodes in a solar cell device stack, the external luminescence yield-a quantity that must be maximized to obtain high efficiency-remains as high as 15 per cent, indicating very clean interfaces. We also demonstrate the inhibition of transient photoinduced ion-migration processes across a wide range of mixed halide perovskite bandgaps in materials that exhibit bandgap instabilities when unpassivated. We validate these results in fully operating solar cells. Our work represents an important advance in the construction of tunable metal halide perovskite films and interfaces that can approach the efficiency limits in tandem solar cells, coloured-light-emitting diodes and other optoelectronic applications.

Gate-defined Quantum Confinement in Suspended Bilayer Graphene

NASA Astrophysics Data System (ADS)

Allen, Monica

2013-03-01

Quantum confined devices in carbon-based materials offer unique possibilities for applications ranging from quantum computation to sensing. In particular, nanostructured carbon is a promising candidate for spin-based quantum computation due to the ability to suppress hyperfine coupling to nuclear spins, a dominant source of spin decoherence. Yet graphene lacks an intrinsic bandgap, which poses a serious challenge for the creation of such devices. We present a novel approach to quantum confinement utilizing tunnel barriers defined by local electric fields that break sublattice symmetry in suspended bilayer graphene. This technique electrostatically confines charges via band structure control, thereby eliminating the edge and substrate disorder that hinders on-chip etched nanostructures to date. We report clean single electron tunneling through gate-defined quantum dots in two regimes: at zero magnetic field using the energy gap induced by a perpendicular electric field and at finite magnetic fields using Landau level confinement. The observed Coulomb blockade periodicity agrees with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates quantum confinement with pristine device quality and access to vibrational modes, enabling wide applications from electromechanical sensors to quantum bits. More broadly, the ability to externally tailor the graphene bandgap over nanometer scales opens a new unexplored avenue for creating quantum devices.

Analog parameters of solid source Zn diffusion In X Ga1-X As nTFETs down to 10 K

NASA Astrophysics Data System (ADS)

Bordallo, C.; Martino, J. A.; Agopian, P. G. D.; Alian, A.; Mols, Y.; Rooyackers, R.; Vandooren, A.; Verhulst, A. S.; Smets, Q.; Simoen, E.; Claeys, C.; Collaert, N.

2016-12-01

The analog parameters of In0.53Ga0.47As and In0.7Ga0.3As nTFETs with solid state Zn diffused source are investigated from room temperature down to 10 K. The In0.7Ga0.3As devices are shown to yield a higher on-state current than the In0.53Ga0.47As counterparts, and, consequently, a higher transconductance due to the lower bandgap. At the same time, the In0.7Ga0.3As devices present higher output conductance values. The balance between these two factors results in a higher intrinsic voltage gain (A V) for In0.7Ga0.3As nTFETs at low gate bias and similar A V for both devices at high gate voltage. The transconductance is reduced at low temperature due to the increase of the bandgap, while the output conductance is decreased (improved) upon cooling, which is related to the reduction of the drain dependence of the BTBT generation rate. The temperature influence is more pronounced in the output conductance than in the transconductance, resulting in an increase of the intrinsic voltage gain at low temperatures for both devices and bias.

Wide-Band Spatially Tunable Photonic Bandgap in Visible Spectral Range and Laser based on a Polymer Stabilized Blue Phase

PubMed Central

Lin, Jia-De; Wang, Tsai-Yen; Mo, Ting-Shan; Huang, Shuan-Yu; Lee, Chia-Rong

2016-01-01

This work successfully develops a largely-gradient-pitched polymer-stabilized blue phase (PSBP) photonic bandgap (PBG) device with a wide-band spatial tunability in nearly entire visible region within a wide blue phase (BP) temperature range including room temperature. The device is fabricated based on the reverse diffusion of two injected BP-monomer mixtures with a low and a high chiral concentrations and afterwards through UV-curing. This gradient-pitched PSBP can show a rainbow-like reflection appearance in which the peak wavelength of the PBG can be spatially tuned from the blue to the red regions at room temperature. The total tuning spectral range for the cell is as broad as 165 nm and covers almost the entire visible region. Based on the gradient-pitched PSBP, a spatially tunable laser is also demonstrated in this work. The temperature sensitivity of the lasing wavelength for the laser is negatively linear and approximately −0.26 nm/°C. The two devices have a great potential for use in applications of photonic devices and displays because of their multiple advantages, such as wide-band tunability, wide operated temperature range, high stability and reliability, no issue of hysteresis, no need of external controlling sources, and not slow tuning speed (mechanically). PMID:27456475

The excitonic photoluminescence mechanism and lasing action in band-gap-tunable CdS(1-x)Se(x) nanostructures.

PubMed

Dai, Jun; Zhou, Pengxia; Lu, Junfeng; Zheng, Hongge; Guo, Jiyuan; Wang, Fang; Gu, Ning; Xu, Chunxiang

2016-01-14

Bandgap tunable semiconductor materials have wide application in integrated-optoelectronic and communication devices. The CdS1-xSex ternary semiconductor materials covering green-red bands have been reported previously, but their basic band-gap and optical properties crucial to the performance of the CdS1-xSex-based optoelectronic devices have not been deeply understood. In this paper, we theoretically simulated and discussed the feasibility of bandgap-tunable CdS1-xSex nanomaterials for designing wavelength tunable microlasers. Then we fabricated the CdS1-xSex nanobelts with their band gap ranging from 2.4 to 1.74 eV by adjusting the composition ratio x in the vapor-phase-transport growth process. The temperature-dependent photoluminescence and exciton-related optical constants of the CdS1-xSex nanobelts were carefully demonstrated. Finally, the wavelength-tunable Fabry-Perot lasing in CdS1-xSex nanobelts was obtained, and the Fabry-Perot lasing mechanism was numerically simulated by the FDTD method. The systematic results on the mechanism of the tunable band gap, exciton properties and lasing of the CdS1-xSex nanostructure help us deeply understand the intrinsic optical properties of this material, and will build a strong foundation for future application of green-red wavelength-tunable CdS1-xSex microlasers.

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment.

PubMed

Huang, Chi-Hsien; Lin, Chih-Ting; Wang, Jer-Chyi; Chou, Chien; Ye, Yu-Ren; Cheng, Bing-Ming; Lai, Chao-Sung

2012-11-30

A plasma system with a complementary filter to shield samples from damage during tetrafluoromethane (CF(4)) plasma treatment was proposed in order to incorporate fluorine atoms into gadolinium oxide nanocrystals (Gd(2)O(3)-NCs) for flash memory applications. X-ray photoelectron spectroscopy confirmed that fluorine atoms were successfully introduced into the Gd(2)O(3)-NCs despite the use of a filter in the plasma-enhanced chemical vapour deposition system to shield against several potentially damaging species. The number of incorporated fluorine atoms can be controlled by varying the treatment time. The optimized memory window of the resulting flash memory devices was twice that of devices treated by a filterless system because more fluorine atoms were incorporated into the Gd(2)O(3)-NCs film with very little damage. This enlarged the bandgap energy from 5.48 to 6.83 eV, as observed by ultraviolet absorption measurements. This bandgap expansion can provide a large built-in electric field that allows more charges to be stored in the Gd(2)O(3)-NCs. The maximum improvement in the retention characteristic was >60%. Because plasma damage during treatment is minimal, maximum fluorination can be achieved. The concept of simply adding a filter to a plasma system to prevent plasma damage exhibits great promise for functionalization or modification of nanomaterials for advanced nanoelectronics while introducing minimal defects.

Optical fiber end-facet polymer suspended-mirror devices

NASA Astrophysics Data System (ADS)

Yao, Mian; Wu, Jushuai; Zhang, A. Ping; Tam, Hwa-Yaw; Wai, P. K. A.

2017-04-01

This paper presents a novel optical fiber device based on a polymer suspended mirror on the end facet of an optical fiber. With an own-developed optical 3D micro-printing technology, SU-8 suspended-mirror devices (SMDs) were successfully fabricated on the top of a standard single-mode optical fiber. Optical reflection spectra of the fabricated SU- 8 SMDs were measured and compared with theoretical analysis. The proposed technology paves a way towards 3D microengineering of the small end-facet of optical fibers to develop novel fiber-optic sensors.

Careers and people

NASA Astrophysics Data System (ADS)

2016-07-01

Medical physicist Alla Reznik's work on next-generation positron emission tomography (PET) devices - which recently won her a Leadership Award from the Ontario Research and Innovation Optical Network (ORION) - developed out of more than a decade of research into the fundamental properties of wide band-gap semiconductors.

Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites

PubMed Central

Dar, M. Ibrahim; Jacopin, Gwénolé; Meloni, Simone; Mattoni, Alessandro; Arora, Neha; Boziki, Ariadni; Zakeeruddin, Shaik Mohammed; Rothlisberger, Ursula; Grätzel, Michael

2016-01-01

Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence behavior of three representatives of this important class of photonic materials, that is, CH3NH3PbI3, CH3NH3PbBr3, and CH(NH2)2PbBr3, which emerged from our thorough studies of the effects of temperature on their bandgap and emission decay dynamics using time-integrated and time-resolved photoluminescence spectroscopy. The low-temperature (<100 K) photoluminescence of CH3NH3PbI3 and CH3NH3PbBr3 reveals two distinct emission peaks, whereas that of CH(NH2)2PbBr3 shows a single emission peak. Furthermore, irrespective of perovskite composition, the bandgap exhibits an unusual blueshift by raising the temperature from 15 to 300 K. Density functional theory and classical molecular dynamics simulations allow for assigning the additional photoluminescence peak to the presence of molecularly disordered orthorhombic domains and also rationalize that the unusual blueshift of the bandgap with increasing temperature is due to the stabilization of the valence band maximum. Our findings provide new insights into the salient emission properties of perovskite materials, which define their performance in solar cells and light-emitting devices. PMID:27819049

Modelling and measurement of bandgap behaviour in medium-wavelength IR InAs/InAs0.815Sb0.185 strained-layer superlattices

NASA Astrophysics Data System (ADS)

Letka, Veronica; Keen, James; Craig, Adam; Marshall, Andrew R. J.

2017-10-01

InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb0.185 SLS structures, grown as undoped absorption epilayers on GaAs, were fabricated using molecular beam epitaxy in order to study the dependence of the ground state transitions on temperature and superlattice period thickness. Photoluminescence peaks at 4 K were obtained with the use of a helium-cooled micro-PL system and an InSb detector, and temperature-dependent absorption spectra were measured in the range 77 K - 300 K on a Fourier Transform Infrared (FTIR) spectrometer, equipped with a 1370 K blackbody source and a DTGS detector. An nBn device sample with the absorber structure identical to one of the undoped samples was also grown and processed with the goal of measuring temperature-dependent spectral response. A model for superlattice band alignment was also devised, incorporating the Bir-Pikus transformation results for uniaxial and biaxial strain, and the Einstein oscillator model for bandgap temperature dependence. Absorption coefficients of several 1000 cm-1 throughout the entire MWIR range are found for all samples, and temperature dependence of the bandgaps is extracted and compared to the model. This and photoluminescence data also demonstrate bandgap shifts consistent with the different superlattice periods of the three samples.

Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites.

PubMed

Dar, M Ibrahim; Jacopin, Gwénolé; Meloni, Simone; Mattoni, Alessandro; Arora, Neha; Boziki, Ariadni; Zakeeruddin, Shaik Mohammed; Rothlisberger, Ursula; Grätzel, Michael

2016-10-01

Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence behavior of three representatives of this important class of photonic materials, that is, CH 3 NH 3 PbI 3 , CH 3 NH 3 PbBr 3 , and CH(NH 2 ) 2 PbBr 3 , which emerged from our thorough studies of the effects of temperature on their bandgap and emission decay dynamics using time-integrated and time-resolved photoluminescence spectroscopy. The low-temperature (<100 K) photoluminescence of CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 reveals two distinct emission peaks, whereas that of CH(NH 2 ) 2 PbBr 3 shows a single emission peak. Furthermore, irrespective of perovskite composition, the bandgap exhibits an unusual blueshift by raising the temperature from 15 to 300 K. Density functional theory and classical molecular dynamics simulations allow for assigning the additional photoluminescence peak to the presence of molecularly disordered orthorhombic domains and also rationalize that the unusual blueshift of the bandgap with increasing temperature is due to the stabilization of the valence band maximum. Our findings provide new insights into the salient emission properties of perovskite materials, which define their performance in solar cells and light-emitting devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L.; Deceglie, Michael G.; Stradins, Paul

Three-terminal (3T) tandem cells fabricated by combining an interdigitated back contact (IBC) Si device with a wider bandgap top cell have the potential to provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects between cells. Here we develop a two dimensional device physics model to study the behavior of IBC Si solar cells operated in a 3T configuration. We investigate how different cell designs impact device performance and discuss the analysis protocol used to understand and optimize power produced from a single junction, 3T device.

Electrode with transparent series resistance for uniform switching of optical modulation devices

DOEpatents

Tench, D Morgan [Camarillo, CA; Cunningham, Michael A [Thousand Oaks, CA; Kobrin, Paul H [Newbury Park, CA

2008-01-08

Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilbert

The objective for this project is to develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter). Device- and system-level thermal analyses are conducted to determine the thermal limitations of current automotive power modules under elevated device temperature conditions. Additionally, novel cooling concepts and material selection will be evaluated to enable high-temperature silicon and WBG devices in power electronics components. WBG devices (silicon carbide [SiC], gallium nitride [GaN]) promise to increase efficiency, but will be driven as hard as possible. This creates challenges for thermal management and reliability.

Large core fiber optic cleaver

DOEpatents

Halpin, John M.

1996-01-01

The present invention relates to a device and method for cleaving optical fibers which yields cleaved optical fiber ends possessing high damage threshold surfaces. The device can be used to cleave optical fibers with core diameters greater than 400 .mu.m.

Efficient low bandgap polymer solar cell with ordered heterojunction defined by nanoimprint lithography.

PubMed

Yang, Yi; Mielczarek, Kamil; Zakhidov, Anvar; Hu, Walter

2014-11-12

In this work, we demonstrate the feasibility of using nanoimprint lithography (NIL) to make efficient low bandgap polymer solar cells with well-ordered heterojunction. High quality low bandgap conjugated polymer poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT) nanogratings are fabricated using this technique for the first time. The geometry effect of PCPDTBT nanostructures on the solar cell performance is investigated by making PCPDTBT/C70 solar cells with different feature sizes of PCPDTBT nanogratings. It is found that the power conversion efficiency (PCE) increases with increasing nanograting height, PCPDTBT/C70 junction area, and decreasing nanograting width. We also find that NIL makes PCPDTBT chains interact more strongly and form an improved structural ordering. Solar cells made on the highest aspect ratio PCPDTBT nanostructures are among the best reported devices using the same material with a PCE of 5.5%.

HIGH-k GATE DIELECTRIC: AMORPHOUS Ta/La2O3 FILMS GROWN ON Si AT LOW PRESSURE

NASA Astrophysics Data System (ADS)

Bahari, Ali; Khorshidi, Zahra

2014-09-01

In the present study, Ta/La2O3 films (La2O3 doped with Ta2O5) as a gate dielectric were prepared using a sol-gel method at low pressure. Ta/La2O3 film has some hopeful properties as a gate dielectric of logic device. The structure and morphology of Ta/La2O3 films were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Electrical properties of films were performed using capacitance-voltage (C-V) and current density-voltage (J-V) measurements. The optical bandgap of samples was studied by UV-visible optical absorbance measurement. The optical bandgap, Eopt, is determined from the absorbance spectra. The obtained results show that Ta/La2O3 film as a good gate dielectric has amorphous structure, good thermal stability, high dielectric constant (≈ 25), low leakage current and wide bandgap (≈ 4.7 eV).

Thermally enhanced photoluminescence for heat harvesting in photovoltaics

PubMed Central

Manor, Assaf; Kruger, Nimrod; Sabapathy, Tamilarasan; Rotschild, Carmel

2016-01-01

The maximal Shockley–Queisser efficiency limit of 41% for single-junction photovoltaics is primarily caused by heat dissipation following energetic-photon absorption. Solar-thermophotovoltaics concepts attempt to harvest this heat loss, but the required high temperatures (T>2,000 K) hinder device realization. Conversely, we have recently demonstrated how thermally enhanced photoluminescence is an efficient optical heat-pump that operates in comparably low temperatures. Here we theoretically and experimentally demonstrate such a thermally enhanced photoluminescence based solar-energy converter. Here heat is harvested by a low bandgap photoluminescent absorber that emits thermally enhanced photoluminescence towards a higher bandgap photovoltaic cell, resulting in a maximum theoretical efficiency of 70% at a temperature of 1,140 K. We experimentally demonstrate the key feature of sub-bandgap photon thermal upconversion with an efficiency of 1.4% at only 600 K. Experiments on white light excitation of a tailored Cr:Nd:Yb glass absorber suggest that conversion efficiencies as high as 48% at 1,500 K are in reach. PMID:27762271

Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer

NASA Astrophysics Data System (ADS)

Bahuguna, Bhagwati Prasad; Saini, L. K.; Sharma, Rajesh O.; Tiwari, Brajesh

2018-05-01

We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer.

Fiber-optic evanescent-field sensor for attitude measurement

NASA Astrophysics Data System (ADS)

Liu, Yun; Chen, Shimeng; Liu, Zigeng; Guang, Jianye; Peng, Wei

2017-11-01

We proposed a new approach to attitude measurement by an evanescent field-based optical fiber sensing device and demonstrated a liquid pendulum. The device consisted of three fiber-optic evanescent-filed sensors which were fabricated by tapered single mode fibers and immersed in liquid. Three fiber Bragg gratings were used to measure the changes in evanescent field. And their reflection peaks were monitored in real time as measurement signals. Because every set of reflection responses corresponded to a unique attitude, the attitude of the device could be measured by the three fiber-optic evanescent-filed sensors. After theoretical analysis, computerized simulation and experimental verification, regular responses were obtained using this device for attitude measurement. The measurement ranges of dihedral angle and direction angle were 0°-50° and 0°-360°. The device is based on cost-effective power-referenced scheme. It can be used in electromagnetic or nuclear radiation environment.

Large core fiber optic cleaver

DOEpatents

Halpin, J.M.

1996-03-26

The present invention relates to a device and method for cleaving optical fibers which yields cleaved optical fiber ends possessing high damage threshold surfaces. The device can be used to cleave optical fibers with core diameters greater than 400 {micro}m. 30 figs.

Fiber-based architectures for organic photovoltaics

NASA Astrophysics Data System (ADS)

Liu, Jiwen; Namboothiry, Manoj A. G.; Carroll, David L.

2007-02-01

Using poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 bulk-heterojunction blends as the absorbing material, organic photovoltaic devices have been fabricated onto multimode optical fibers. The behavior of the short circuit current density, filling factor, and open circuit voltage as the angle of the incident light onto the cleaved fiber face is varied suggests that the evanescent field at the interface between the fiber and the transparent contact may play a role in coupling light from the fiber into the device. Further, optical loss into the device increases as the fiber diameter decreases.

High-Frequency Switching Transients and Power Loss Estimation in Electric Drive Systems that Utilize Wide-Bandgap Semiconductors

NASA Astrophysics Data System (ADS)

Fulani, Olatunji T.

Development of electric drive systems for transportation and industrial applications is rapidly seeing the use of wide-bandgap (WBG) based power semiconductor devices. These devices, such as SiC MOSFETs, enable high switching frequencies and are becoming the preferred choice in inverters because of their lower switching losses and higher allowable operating temperatures. Due to the much shorter turn-on and turn-off times and correspondingly larger output voltage edge rates, traditional models and methods previously used to estimate inverter and motor power losses, based upon a triangular power loss waveform, are no longer justifiable from a physical perspective. In this thesis, more appropriate models and a power loss calculation approach are described with the goal of more accurately estimating the power losses in WBG-based electric drive systems. Sine-triangle modulation with third harmonic injection is used to control the switching of the inverter. The motor and inverter models are implemented using Simulink and computer studies are shown illustrating the application of the new approach.

High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

NASA Technical Reports Server (NTRS)

Elmes, John

2015-01-01

Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

DOE PAGES

Young, James L.; Steiner, Myles A.; Döscher, Henning; ...

2017-03-13

Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-dopedmore » photocathodes by using a buried p-n junction. Lastly, advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.« less

P-channel thin film transistors using reduced graphene oxide

NASA Astrophysics Data System (ADS)

Chakraborty, S.; Resmi, A. N.; Renuka Devi, P.; Jinesh, K. B.

2017-04-01

Chemically reduced graphene oxide (rGO) samples with various degrees of reduction were prepared using hydrazine hydrate as the reducing agent. Scanning tunnelling microscope imaging shows that rGO contains rows of randomly distributed patches of epoxy groups. The local density of states of the rGO samples were mapped with scanning tunnelling spectroscopy, which shows that the bandgap in rGO originates from the epoxide regions itself. The Fermi level of the epoxide regions is shifted towards the valence band, making rGO locally p-type and a range of bandgaps from 0-2.2 eV was observed in these regions. Thin film transistors were fabricated using rGO as the channel layer. The devices show excellent output characteristics with clear saturation and gate dependence. The transfer characteristics show that rGO behaves as a p-type semiconductor; the devices exhibit an on/off ratio of 104, with a low-bias hole mobility of 3.9 cm2 V-1 s-1.

Two-dimensional analytical model for dual-material control-gate tunnel FETs

NASA Astrophysics Data System (ADS)

Xu, Hui Fang; Dai, Yue Hua; Gui Guan, Bang; Zhang, Yong Feng

2016-09-01

An analytical model for a dual-material control-gate (DMCG) tunnel field effect transistor (TFET) is presented for the first time in this paper, and the influence of the mobile charges on the potential profile is taken into account. On the basis of the potential profile, the lateral electric field is derived and the expression for the drain current is obtained by integrating the band-to-band tunneling (BTBT) generation rate applicable to low-bandgap and high-bandgap materials over the tunneling region. The model also predicts the impacts of the control-gate work function on the potential and drain current. The advantage of this work is that it not only offers physical insight into device physics but also provides the basic designing guideline for DMCG TFETs, enabling the designer to optimize the device in terms of the on-state current, the on-off current ratio, and suppressed ambipolar behavior. Very good agreements for both the potential and drain current are observed between the model calculations and the simulated results.

Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, James L.; Steiner, Myles A.; Döscher, Henning

Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-dopedmore » photocathodes by using a buried p-n junction. Lastly, advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.« less

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

2017-01-01

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

2016-01-01

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE PAGES

Seif, Johannes Peter; Menda, Deneb; Descoeudres, Antoine; ...

2016-08-01

Here, amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers -- inserted between substrate and (front or rear) contacts -- since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. Asmore » a consequence, device implementation of such films as window layers -- without degraded carrier collection -- demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seif, Johannes Peter, E-mail: johannes.seif@alumni.epfl.ch; Ballif, Christophe; De Wolf, Stefaan

Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers—inserted between substrate and (front or rear) contacts—since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation ofmore » such films as window layers—without degraded carrier collection—demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.« less

Multijunction photovoltaic device and fabrication method

DOEpatents

Arya, Rajeewa R.; Catalano, Anthony W.

1993-09-21

A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

Lateral Movement of Screw Dislocations During Homoepitaxial Growth and Devices Yielded Therefrom Free of the Detrimental Effects of Screw Dislocations

NASA Technical Reports Server (NTRS)

Neudeck, Philip G. (Inventor); Powell, J. Anthony (Inventor)

2004-01-01

The present invention is related to a method that enables and improves wide bandgap homoepitaxial layers to be grown on axis single crystal substrates, particularly SiC. The lateral positions of the screw dislocations in epitaxial layers are predetermined instead of random, which allows devices to be reproducibly patterned to avoid performance degrading crystal defects normally created by screw dislocations.

Multimode fiber devices with single-mode performance

NASA Astrophysics Data System (ADS)

Leon-Saval, S. G.; Birks, T. A.; Bland-Hawthorn, J.; Englund, M.

2005-10-01

A taper transition can couple light between a multimode fiber and several single-mode fibers. If the number of single-mode fibers matches the number of spatial modes in the multimode fiber, the transition can have low loss in both directions. This enables the high performance of single-mode fiber devices to be attained in multimode fibers. We report an experimental proof of concept by using photonic crystal fiber techniques to make the transitions, demonstrating a multimode fiber filter with the transmission spectrum of a single-mode fiber grating.

Analysis of multifunctional piezoelectric metastructures for low-frequency bandgap formation and energy harvesting

NASA Astrophysics Data System (ADS)

Sugino, C.; Erturk, A.

2018-05-01

Vibration-based energy harvesting is a growing field for generating low-power electricity to use in wireless electronic devices, such as the sensor networks used in structural health monitoring applications. Locally resonant metastructures, which are structures that comprise locally resonant metamaterial components, enable bandgap formation at wavelengths much longer than the lattice size, for critical applications such as low-frequency vibration attenuation in flexible structures. This work aims to bridge the domains of energy harvesting and locally resonant metamaterials to form multifunctional structures that exhibit both low-power electricity generation and vibration attenuation capabilities. A fully coupled electromechanical modeling framework is developed for two characteristic systems and their modal analysis is presented. Simulations are performed to explore the vibration and electrical power frequency response maps for varying electrical load resistance, and optimal loading conditions are presented. Case studies are presented to understand the interaction of bandgap formation and energy harvesting capabilities of this new class of multifunctional energy-harvesting locally resonant metastructures. It is shown that useful energy can be harvested from locally resonant metastructures without significantly diminishing their dramatic vibration attenuation in the locally resonant bandgap. Thus, integrating energy harvesters into a locally resonant metastructure enables a new potential for multifunctional locally resonant metastructures that can host self-powered sensors.

Design and implementation of fiber-based multiphoton endoscopy with microelectromechanical systems scanning

PubMed Central

Tang, Shuo; Jung, Woonggyu; McCormick, Daniel; Xie, Tuqiang; Su, Jiangping; Ahn, Yeh-Chan; Tromberg, Bruce J.; Chen, Zhongping

2010-01-01

A multiphoton endoscopy system has been developed using a two-axis microelectromechanical systems (MEMS) mirror and double-cladding photonic crystal fiber (DCPCF). The MEMS mirror has a 2-mm-diam, 20-deg optical scanning angle, and 1.26-kHz and 780-Hz resonance frequencies on the x and y axes. The maximum number of resolvable focal spots of the MEMS scanner is 720×720 on the x and y axes, which indicates that the MEMS scanner can potentially support high-resolution multiphoton imaging. The DCPCF is compared with standard single-mode fiber and hollow-core photonic bandgap fiber on the basis of dispersion, attenuation, and coupling efficiency properties. The DCPCF has high collection efficiency, and its dispersion can be compensated by grating pairs. Three configurations of probe design are investigated, and their imaging quality and field of view are compared. A two-lens configuration with a collimation and a focusing lens provides the optimum imaging performance and packaging flexibility. The endoscope is applied to image fluorescent microspheres and bovine knee joint cartilage. PMID:19566298

Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 ohm-cm silicon solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Brandhorst, H. W., Jr.; Lindholm, F. A.; Sah, C. T.

1976-01-01

An experimental method is presented that can be used to interpret the relative roles of bandgap narrowing and recombination processes in the diffused layer. This method involves measuring the device time constant by open-circuit voltage decay and the base region diffusion length by X-ray excitation. A unique illuminated diode method is used to obtain the diode saturation current. These data are interpreted using a simple model to determine individually the minority carrier lifetime and the excess charge. These parameters are then used to infer the relative importance of bandgap narrowing and recombination processes in the diffused layer.

Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters

DOEpatents

Wanlass, Mark W.

2001-01-01

A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP.sub.1-y As.sub.y n-layer formed with an n-type dopant, an Ga.sub.x In.sub.1-x As absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP.sub.1-y As.sub.y p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers.

Uncovering the density of nanowire surface trap states hidden in the transient photoconductance.

PubMed

Xu, Qiang; Dan, Yaping

2016-09-21

The gain of nanoscale photoconductors is closely correlated with surface trap states. Mapping out the density of surface trap states in the semiconductor bandgap is crucial for engineering the performance of nanoscale photoconductors. Traditional capacitive techniques for the measurement of surface trap states are not readily applicable to nanoscale devices. Here, we demonstrate a simple technique to extract the information on the density of surface trap states hidden in the transient photoconductance that is widely observed. With this method, we found that the density of surface trap states of a single silicon nanowire is ∼10(12) cm(-2) eV(-1) around the middle of the upper half bandgap.

Physical Design and Dynamical Analysis of Resonant-Antiresonant Ag/MgO/GaSe/Al Optoelectronic Microwave Devices

NASA Astrophysics Data System (ADS)

Kmail, Renal R. N.; Qasrawi, A. F.

2015-11-01

In this work, the design and optical and electrical properties of MgO/GaSe heterojunction devices are reported and discussed. The device was designed using 0.4- μm-thick n-type GaSe as substrate for a 1.6- μm-thick p-type MgO optoelectronic window. The device was characterized by means of ultraviolet-visible optical spectrophotometry in the wavelength region from 200 nm to 1100 nm, current-voltage ( I- V) characteristics, impedance spectroscopy in the range from 1.0 MHz to 1.8 GHz, and microwave amplitude spectroscopy in the frequency range from 1.0 MHz to 3.0 GHz. Optical analysis of the MgO/GaSe heterojunction revealed enhanced absorbing ability of the GaSe below 2.90 eV with an energy bandgap shift from 2.10 eV for the GaSe substrate to 1.90 eV for the heterojunction design. On the other hand, analysis of I- V characteristics revealed a tunneling-type device conducting current by electric field-assisted tunneling of charged particles through a barrier with height of 0.81 eV and depletion region width of 670 nm and 116 nm when forward and reverse biased, respectively. Very interesting features of the device are observed when subjected to alternating current (ac) signal analysis. In particular, the device exhibited resonance-antiresonance behavior and negative capacitance characteristics near 1.0 GHz. The device quality factor was ˜102. In addition, when a small ac signal of Bluetooth amplitude (0.0 dBm) was imposed between the device terminals, the power spectra of the device displayed tunable band-stop filter characteristics with maximum notch frequency of 1.6 GHz. The energy bandgap discontinuity, the resonance-antiresonance behavior, the negative capacitance features, and the tunability of the electromagnetic power spectra at microwave frequencies nominate the Ag/MgO/GaSe/Al device as a promising optoelectronic device for use in multipurpose operations at microwave frequencies.

21 CFR 878.3500 - Polytetrafluoroethylene with carbon fibers composite implant material.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Polytetrafluoroethylene with carbon fibers... Prosthetic Devices § 878.3500 Polytetrafluoroethylene with carbon fibers composite implant material. (a) Identification. A polytetrafluoroethylene with carbon fibers composite implant material is a porous device...

Hybrid optical fiber add-drop filter based on wavelength dependent light coupling between micro/nano fiber ring and side-polished fiber

NASA Astrophysics Data System (ADS)

Yu, Jianhui; Jin, Shaoshen; Wei, Qingsong; Zang, Zhigang; Lu, Huihui; He, Xiaoli; Luo, Yunhan; Tang, Jieyuan; Zhang, Jun; Chen, Zhe

2015-01-01

In this paper, we report our experimental study on directly coupling a micro/nano fiber (MNOF) ring with a side-polished fiber(SPF). As a result of the study, the behavior of an add-drop filter was observed. The demonstrated add-drop filter explored the wavelength dependence of light coupling between a MNOF ring and a SPF. The characteristics of the filter and its performance dependence on the MNOF ring diameter were investigated experimentally. The investigation resulted in an empirically obtained ring diameter that showed relatively good filter performance. Since light coupling between a (MNOF) and a conventional single mode fiber has remained a challenge in the photonic integration community, the present study may provide an alternative way to couple light between a MNOF device and a conventional single mode fiber based device or system. The hybridization approach that uses a SPF as a platform to integrate a MNOF device may enable the realization of other all-fiber optical hybrid devices.

Hybrid optical fiber add-drop filter based on wavelength dependent light coupling between micro/nano fiber ring and side-polished fiber.

PubMed

Yu, Jianhui; Jin, Shaoshen; Wei, Qingsong; Zang, Zhigang; Lu, Huihui; He, Xiaoli; Luo, Yunhan; Tang, Jieyuan; Zhang, Jun; Chen, Zhe

2015-01-12

In this paper, we report our experimental study on directly coupling a micro/nano fiber (MNOF) ring with a side-polished fiber(SPF). As a result of the study, the behavior of an add-drop filter was observed. The demonstrated add-drop filter explored the wavelength dependence of light coupling between a MNOF ring and a SPF. The characteristics of the filter and its performance dependence on the MNOF ring diameter were investigated experimentally. The investigation resulted in an empirically obtained ring diameter that showed relatively good filter performance. Since light coupling between a (MNOF) and a conventional single mode fiber has remained a challenge in the photonic integration community, the present study may provide an alternative way to couple light between a MNOF device and a conventional single mode fiber based device or system. The hybridization approach that uses a SPF as a platform to integrate a MNOF device may enable the realization of other all-fiber optical hybrid devices.

Bertrand Tremolet de Villers | NREL

Science.gov Websites

University of California, Santa Barbara. There, he studied novel materials for organic electronic devices , including non-fullerene acceptors for organic solar cells and low optical bandgap polymers for near-IR Universal Non-Fullerene Acceptors for Organic Photovoltaics." Adv. Energy Mater. (4); p. 1301007. http

76 FR 65751 - Notice of intent to grant exclusive license

Federal Register 2010, 2011, 2012, 2013, 2014

2011-10-24

... Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal,'' U.S. Patent Application No. 12/254,134 entitled ``Hybrid Bandgap Engineering for Super-Hetero- Epitaxial Semiconductor Materials... Semiconductor Materials on Trigonal Substrate with Single Crystal Properties and Devices Based on Such Materials...

Compact optical transconductance varistor

DOEpatents

Sampayan, Stephen

2015-09-22

A compact radiation-modulated transconductance varistor device having both a radiation source and a photoconductive wide bandgap semiconductor material (PWBSM) integrally formed on a substrate so that a single interface is formed between the radiation source and PWBSM for transmitting PWBSM activation radiation directly from the radiation source to the PWBSM.

In vivo brain imaging using a portable 3.9 gram two-photon fluorescence microendoscope

NASA Astrophysics Data System (ADS)

Flusberg, Benjamin A.; Jung, Juergen C.; Cocker, Eric D.; Anderson, Erik P.; Schnitzer, Mark J.

2005-09-01

We introduce a compact two-photon fluorescence microendoscope based on a compound gradient refractive index endoscope probe, a DC micromotor for remote adjustment of the image plane, and a flexible photonic bandgap fiber for near distortion-free delivery of ultrashort excitation pulses. The imaging head has a mass of only 3.9 g and provides micrometer-scale resolution. We used portable two-photon microendoscopy to visualize hippocampal blood vessels in the brains of live mice.

Fiber-optic fluorescence imaging

PubMed Central

Flusberg, Benjamin A; Cocker, Eric D; Piyawattanametha, Wibool; Jung, Juergen C; Cheung, Eunice L M; Schnitzer, Mark J

2010-01-01

Optical fibers guide light between separate locations and enable new types of fluorescence imaging. Fiber-optic fluorescence imaging systems include portable handheld microscopes, flexible endoscopes well suited for imaging within hollow tissue cavities and microendoscopes that allow minimally invasive high-resolution imaging deep within tissue. A challenge in the creation of such devices is the design and integration of miniaturized optical and mechanical components. Until recently, fiber-based fluorescence imaging was mainly limited to epifluorescence and scanning confocal modalities. Two new classes of photonic crystal fiber facilitate ultrashort pulse delivery for fiber-optic two-photon fluorescence imaging. An upcoming generation of fluorescence imaging devices will be based on microfabricated device components. PMID:16299479

Modeling and Simulation of III-Nitride-Based Solar Cells using NextnanoRTM

NASA Astrophysics Data System (ADS)

Refaei, Malak

Nextnano3 software is a well-known package for simulating semiconductor band-structures at the nanoscale and predicting the general electronic structure. In this work, it is further demonstrated as a viable tool for the simulation of III-nitride solar cells. In order to prove this feasibility, the generally accepted solar cell simulation package, PC1D, was chosen for comparison. To critique the results from both PC1D and Nextnano3, the fundamental drift-diffusion equations were used to calculate the performance of a simple p-n homojunction solar cell device analytically. Silicon was picked as the material for this comparison between the outputs of the two simulators as well as the results of the drift-diffusion equations because it is a well-known material in both software tools. After substantiating the capabilities of Nextnano3 for the simulation solar cells, an InGaN single-junction solar cell was simulated. The effects of various indium compositions and device structures on the performance of this InGaN p-n homojunction solar cell was then investigated using Nextnano 3 as a simulation tool. For single-junction devices with varying bandgap, an In0.6Ga0.4N device with a bandgap of 1.44 eV was found to be the optimum. The results of this research demonstrate that the Nextnano3 software can be used to usefully simulate solar cells in general, and III-nitride solar cells specifically, for future study of nanoscale structured devices.

Microstructural control of charge transport in organic blend thin-film transistors

DOE PAGES

Hunter, Simon; Chen, Jihua; Anthopoulos, Thomas D.

2014-07-17

In this paper, the charge-transport processes in organic p-channel transistors based on the small-molecule 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES ADT), the polymer poly(triarylamine)(PTAA) and blends thereof are investigated. In the case of blend films, lateral conductive atomic force microscopy in combination with energy filtered transmission electron microscopy are used to study the evolution of charge transport as a function of blends composition, allowing direct correlation of the film's elemental composition and morphology with hole transport. Low-temperature transport measurements reveal that optimized blend devices exhibit lower temperature dependence of hole mobility than pristine PTAA devices while also providing a narrower bandgap trap distribution thanmore » pristine diF-TES ADT devices. These combined effects increase the mean hole mobility in optimized blends to 2.4 cm 2/Vs; double the value measured for best diF-TES ADT-only devices. The bandgap trap distribution in transistors based on different diF-TES ADT:PTAA blend ratios are compared and the act of blending these semiconductors is seen to reduce the trap distribution width yet increase the average trap energy compared to pristine diF-TES ADT-based devices. In conclusion, our measurements suggest that an average trap energy of <75 meV and a trap distribution of <100 meV is needed to achieve optimum hole mobility in transistors based on diF-TES ADT:PTAA blends.« less

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device.

PubMed

Groenendijk, Dirk J; Buscema, Michele; Steele, Gary A; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf; van der Zant, Herre S J; Castellanos-Gomez, Andres

2014-10-08

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms, the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of 2 larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by, for example, an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizable thermal gradient upon illumination.

Optoelectronic Fibers via Selective Amplification of In-Fiber Capillary Instabilities.

PubMed

Wei, Lei; Hou, Chong; Levy, Etgar; Lestoquoy, Guillaume; Gumennik, Alexander; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

2017-01-01

Thermally drawn metal-insulator-semiconductor fibers provide a scalable path to functional fibers. Here, a ladder-like metal-semiconductor-metal photodetecting device is formed inside a single silica fiber in a controllable and scalable manner, achieving a high density of optoelectronic components over the entire fiber length and operating at a bandwidth of 470 kHz, orders of magnitude larger than any other drawn fiber device. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photoelectrochemical cells for conversion of solar energy to electricity and methods of their manufacture

DOEpatents

Skotheim, Terje

1984-04-10

A photoelectric device is disclosed which comprises first and second layers of semiconductive material, each of a different bandgap, with a layer of dry solid polymer electrolyte disposed between the two semiconductor layers. A layer of a polymer blend of a highly conductive polymer and a solid polymer electrolyte is further interposed between the dry solid polymer electrolyte and the first semiconductor layer. A method of manufacturing such devices is also disclosed.

Strained layer Fabry-Perot device

DOEpatents

Brennan, Thomas M.; Fritz, Ian J.; Hammons, Burrell E.

1994-01-01

An asymmetric Fabry-Perot reflectance modulator (AFPM) consists of an active region between top and bottom mirrors, the bottom mirror being affixed to a substrate by a buffer layer. The active region comprises a strained-layer region having a bandgap and thickness chosen for resonance at the Fabry-Perot frequency. The mirrors are lattice matched to the active region, and the buffer layer is lattice matched to the mirror at the interface. The device operates at wavelengths of commercially available semiconductor lasers.

Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs.

DTIC Science & Technology

1983-04-01

34.. .. . ...- "- -,-. SIGNIFICANCE AND EXPLANATION Many different codes for the simulation of semiconductor devices such as transitors , diodes, thyristors are already circulated...partially take into account the consequences introduced by degenerate semiconductors (e.g. invalidity of Boltzmann’s statistics , bandgap narrowing). These...ft - ni p nep /Ut(2.10) Sni *e p nie 2.11) .7. (2.10) can be physically interpreted as the application of Boltzmann statistics . However (2.10) a.,zo

Broadband light trapping strategies for quantum-dot photovoltaic cells (>10%) and their issues with the measurement of photovoltaic characteristics.

PubMed

Cho, Changsoon; Song, Jung Hoon; Kim, Changjo; Jeong, Sohee; Lee, Jung-Yong

2017-12-12

Bandgap tunability and broadband absorption make quantum-dot (QD) photovoltaic cells (PVs) a promising candidate for future solar energy conversion systems. Approaches to improving the electrical properties of the active layer increase efficiency in part. The present study focuses on optical room for enhancement in QD PVs over wide spectrum in the near-infrared (NIR) region. We find that ray-optical light trapping schemes rather than the nanophotonics approach may be the best solution for enhancing broadband QD PVs by suppressing the escape probability of internal photons without spectral dependency. Based on the theoretical study of diverse schemes for various bandgaps, we apply a V-groove structure and a V-groove textured compound parabolic trapper (VCPT) to PbS-based QD PVs along with the measurement issues for PVs with a light scattering layer. The efficiency of the best device is improved from 10.3% to 11.0% (certified to 10.8%) by a V-groove structure despite the possibility of underestimation caused by light scattering in small-area devices (aperture area: 0.0625 cm 2 ). By minimizing such underestimation, even greater enhancements of 13.6% and 15.6% in short circuit current are demonstrated for finger-type devices (0.167 cm 2 without aperture) and large-area devices (2.10 cm 2 with an aperture of 0.350 cm 2 ), respectively, using VCPT.

Enhancement in fluorescence quantum yield of MEH-PPV:BT blends for polymer light emitting diode applications

NASA Astrophysics Data System (ADS)

Nimith, K. M.; Satyanarayan, M. N.; Umesh, G.

2018-06-01

We have investigated the effect of blending electron deficient heterocycle Benzothiadiazole (BT) on the photo-physical properties of conjugated polymer Poly [2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV). Quantum yield (QY) value has been found to increase from 37% for pure MEH-PPV to 45% for an optimum MEH-PPV:BT blend ratio of 1:3. This can be attributed to the efficient energy transfer from the wide bandgap BT (host) to the small bandgap MEH-PPV (guest). The FTIR spectrum of MEH-PPV:BT blended thin film indicates suppression of aromatic C-H out-of-plane and in-plane bending, suggesting planarization of the conjugated polymer chains and, hence, leading to increase in the conjugation length. The increase in conjugation length is also evident from the red-shifted PL spectra of MEH-PPV:BT blended films. Single layer MEH-PPV:BT device shows lower turn-on voltage than single layer MEH-PPV alone device. Further, the effect of electrical conductivity of PEDOT:PSS on the current-voltage characteristics is investigated in the PLED devices with MEH-PPV:BT blend as the active layer. PEDOT:PSS with higher conductivity as HIL reduces the turn on voltage from 4.5 V to 3.9 V and enhances the current density and optical output in the device.

Highly Efficient Ternary-Blend Polymer Solar Cells Enabled by a Nonfullerene Acceptor and Two Polymer Donors with a Broad Composition Tolerance.

PubMed

Xu, Xiaopeng; Bi, Zhaozhao; Ma, Wei; Wang, Zishuai; Choy, Wallace C H; Wu, Wenlin; Zhang, Guangjun; Li, Ying; Peng, Qiang

2017-12-01

In this work, highly efficient ternary-blend organic solar cells (TB-OSCs) are reported based on a low-bandgap copolymer of PTB7-Th, a medium-bandgap copolymer of PBDB-T, and a wide-bandgap small molecule of SFBRCN. The ternary-blend layer exhibits a good complementary absorption in the range of 300-800 nm, in which PTB7-Th and PBDB-T have excellent miscibility with each other and a desirable phase separation with SFBRCN. In such devices, there exist multiple energy transfer pathways from PBDB-T to PTB7-Th, and from SFBRCN to the above two polymer donors. The hole-back transfer from PTB7-Th to PBDB-T and multiple electron transfers between the acceptor and the donor materials are also observed for elevating the whole device performance. After systematically optimizing the weight ratio of PBDB-T:PTB7-Th:SFBRCN, a champion power conversion efficiency (PCE) of 12.27% is finally achieved with an open-circuit voltage (V oc ) of 0.93 V, a short-circuit current density (J sc ) of 17.86 mA cm -2 , and a fill factor of 73.9%, which is the highest value for the ternary OSCs reported so far. Importantly, the TB-OSCs exhibit a broad composition tolerance with a high PCE over 10% throughout the whole blend ratios. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Compact and portable multiline UV and visible Raman lasers in hydrogen-filled HC-PCF.

PubMed

Wang, Y Y; Couny, F; Light, P S; Mangan, B J; Benabid, F

2010-04-15

We report on the realization of compact UV visible multiline Raman lasers based on two types of hydrogen-filled hollow-core photonic crystal fiber. The first, with a large pitch Kagome lattice structure, offers a broad spectral coverage from near IR through to the much sought after yellow, deep-blue and UV, whereas the other, based on photonic bandgap guidance, presents a pump conversion concentrated in the visible region. The high Raman efficiency achieved through these fibers allows for compact, portable diode-pumped solid-state lasers to be used as pumps. Each discrete component of this laser system exhibits a spectral density several orders of magnitude larger than what is achieved with supercontinuum sources and a narrow linewidth, making it an ideal candidate for forensics and biomedical applications.

Lab-on-fiber electrophoretic trace mixture separating and detecting an optofluidic device based on a microstructured optical fiber.

PubMed

Yang, Xinghua; Guo, Xiaohui; Li, Song; Kong, Depeng; Liu, Zhihai; Yang, Jun; Yuan, Libo

2016-04-15

We report an in-fiber integrated electrophoretic trace mixture separating and detecting an optofluidic optical fiber sensor based on a specially designed optical fiber. In this design, rapid in situ separation and simultaneous detection of mixed analytes can be realized under electro-osmotic flow in the microstructured optical fiber. To visually display the in-fiber separating and detecting process, two common fluorescent indicators are adopted as the optofluidic analytes in the optical fiber. Results show that a trace amount of the mixture (0.15 μL) can be completely separated within 3.5 min under a high voltage of 5 kV. Simultaneously, the distributed information of the separated analytes in the optical fiber can be clearly obtained by scanning along the optical fiber using a 355 nm laser. The emission from the analytes can be efficiently coupled into the inner core and guides to the remote end of the optical fiber. In addition, the thin cladding around the inner core in the optical fiber can prevent the fluorescent cross talk between the analytes in this design. Compared to previous optical fiber optofluidic devices, this device first realizes simultaneously separating treatment and the detection of the mixed samples in an optical fiber. Significantly, such an in-fiber integrated separating and detecting optofluidic device can find wide applications in various analysis fields involves mixed samples, such as biology, chemistry, and environment.

Optical fiber loops and helices: tools for integrated photonic device characterization and microfluidic trapping

NASA Astrophysics Data System (ADS)

Ren, Yundong; Zhang, Rui; Ti, Chaoyang; Liu, Yuxiang

2016-09-01

Tapered optical fibers can deliver guided light into and carry light out of micro/nanoscale systems with low loss and high spatial resolution, which makes them ideal tools in integrated photonics and microfluidics. Special geometries of tapered fibers are desired for probing monolithic devices in plane as well as optical manipulation of micro particles in fluids. However, for many specially shaped tapered fibers, it remains a challenge to fabricate them in a straightforward, controllable, and repeatable way. In this work, we fabricated and characterized two special geometries of tapered optical fibers, namely fiber loops and helices, that could be switched between one and the other. The fiber loops in this work are distinct from previous ones in terms of their superior mechanical stability and high optical quality factors in air, thanks to a post-annealing process. We experimentally measured an intrinsic optical quality factor of 32,500 and a finesse of 137 from a fiber loop. A fiber helix was used to characterize a monolithic cavity optomechanical device. Moreover, a microfluidic "roller coaster" was demonstrated, where microscale particles in water were optically trapped and transported by a fiber helix. Tapered fiber loops and helices can find various applications ranging from on-the-fly characterization of integrated photonic devices to particle manipulation and sorting in microfluidics.

Extremely Elastic Wearable Carbon Nanotube Fiber Strain Sensor for Monitoring of Human Motion.

PubMed

Ryu, Seongwoo; Lee, Phillip; Chou, Jeffrey B; Xu, Ruize; Zhao, Rong; Hart, Anastasios John; Kim, Sang-Gook

2015-06-23

The increasing demand for wearable electronic devices has made the development of highly elastic strain sensors that can monitor various physical parameters an essential factor for realizing next generation electronics. Here, we report an ultrahigh stretchable and wearable device fabricated from dry-spun carbon nanotube (CNT) fibers. Stretching the highly oriented CNT fibers grown on a flexible substrate (Ecoflex) induces a constant decrease in the conductive pathways and contact areas between nanotubes depending on the stretching distance; this enables CNT fibers to behave as highly sensitive strain sensors. Owing to its unique structure and mechanism, this device can be stretched by over 900% while retaining high sensitivity, responsiveness, and durability. Furthermore, the device with biaxially oriented CNT fiber arrays shows independent cross-sensitivity, which facilitates simultaneous measurement of strains along multiple axes. We demonstrated potential applications of the proposed device, such as strain gauge, single and multiaxial detecting motion sensors. These devices can be incorporated into various motion detecting systems where their applications are limited to their strain.

Hollow fiber apparatus and use thereof for fluids separations and heat and mass transfers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bikson, Benjamin; Etter, Stephen; Ching, Nathaniel

A hollow fiber device includes a hollow fiber bundle, comprising a plurality of hollow fibers, a first tubesheet and a second tubesheet encapsulating respective distal ends of the hollow fiber bundle. The tubesheets have boreholes in fluid communication with bores of the hollow fibers. In at least one of the tubesheets, the boreholes are formed radially. The hollow fiber device can be utilized in heat exchange, in gas/gas, liquid/liquid and gas/liquid heat transfer, in combined heat and mass transfer and in fluid separation assemblies and processes. The design disclosed herein is light weight and compact and is particularly advantageous whenmore » the pressure of a first fluid introduced into the bores of hollow fibers is higher than the pressure on the shell side of the device.« less

An integrated fiber and stone basket device for use in Thulium fiber laser lithotripsy

NASA Astrophysics Data System (ADS)

Wilson, Christopher R.; Hutchens, Thomas C.; Hardy, Luke A.; Irby, Pierce B.; Fried, Nathaniel M.

2014-03-01

The Thulium fiber laser (TFL) is being explored as an alternative laser lithotripter to the Holmium:YAG laser. The TFL's superior near-single mode beam profile enables higher power transmission through smaller fibers with reduced proximal fiber tip damage. Recent studies have also reported that attaching hollow steel tubing to the distal fiber tip decreases fiber degradation and burn-back without compromising stone ablation rates. However, significant stone retropulsion was observed, which increased with pulse rate. In this study, the hollow steel tip fiber design was integrated with a stone basket to minimize stone retropulsion during ablation. A device was constructed consisting of a 100-μm-core, 140-μm-OD silica fiber outfitted with 5-mm-long stainless steel tubing at the distal tip, and integrated with a 1.3-Fr (0.433-mm-OD) disposable nitinol wire basket, to form an overall 1.9-Fr (0.633-mm- OD) integrated device. This compact design may provide several potential advantages including increased flexibility, higher saline irrigation rates through the ureteroscope working channel, and reduced fiber tip degradation compared to separate fiber and stone basket manipulation. TFL pulse energy of 31.5 mJ with 500 μs pulse duration and pulse rate of 500 Hz was delivered through the integrated fiber/basket device in contact with human uric acid stones, ex vivo. TFL stone ablation rates measured 1.5 +/- 0.2 mg/s, comparable to 1.7 +/- 0.3 mg/s (P > 0.05) using standard bare fiber tips separately with a stone basket. With further development, this device may be useful for minimizing stone retropulsion, thus enabling more efficient TFL lithotripsy at higher pulse rates.

Three-terminal graphene negative differential resistance devices.

PubMed

Wu, Yanqing; Farmer, Damon B; Zhu, Wenjuan; Han, Shu-Jen; Dimitrakopoulos, Christos D; Bol, Ageeth A; Avouris, Phaedon; Lin, Yu-Ming

2012-03-27

A new mechanism for negative differential resistance (NDR) is discovered in three-terminal graphene devices based on a field-effect transistor configuration. This NDR effect is a universal phenomenon for graphene and is demonstrated in devices fabricated with different types of graphene materials and gate dielectrics. Operation of conventional NDR devices is usually based on quantum tunneling or intervalley carrier transfer, whereas the NDR behavior observed here is unique to the ambipolar behavior of zero-bandgap graphene and is associated with the competition between electron and hole conduction as the drain bias increases. These three terminal graphene NDR devices offer more operation flexibility than conventional two-terminal devices based on tunnel diodes, Gunn diodes, or molecular devices, and open up new opportunities for graphene in microwave to terahertz applications. © 2012 American Chemical Society

Characterization of the stress and refractive-index distributions in optical fibers and fiber-based devices

NASA Astrophysics Data System (ADS)

Hutsel, Michael R.

2011-07-01

Optical fiber technology continues to advance rapidly as a result of the increasing demands on communication systems and the expanding use of fiber-based sensing. New optical fiber types and fiber-based communications components are required to permit higher data rates, an increased number of channels, and more flexible installation requirements. Fiber-based sensors are continually being developed for a broad range of sensing applications, including environmental, medical, structural, industrial, and military. As optical fibers and fiber-based devices continue to advance, the need to understand their fundamental physical properties increases. The residual-stress distribution (RSD) and the refractive-index distribution (RID) play fundamental roles in the operation and performance of optical fibers. Custom RIDs are used to tailor the transmission properties of fibers used for long-distance transmission and to enable fiber-based devices such as long-period fiber gratings (LPFGs). The introduction and modification of RSDs enable specialty fibers, such as polarization-maintaining fiber, and contribute to the operation of fiber-based devices. Furthermore, the RSD and the RID are inherently linked through the photoelastic effect. Therefore, both the RSD and the RID need to be characterized because these fundamental properties are coupled and affect the fabrication, operation, and performance of fibers and fiber-based devices. To characterize effectively the physical properties of optical fibers, the RSD and the RID must be measured without perturbing or destroying the optical fiber. Furthermore, the techniques used must not be limited in detecting small variations and asymmetries in all directions through the fiber. Finally, the RSD and the RID must be characterized concurrently without moving the fiber to enable the analysis of the relationship between the RSD and the RID. Although many techniques exist for characterizing the residual stress and the refractive index in optical fibers, there is no existing methodology that meets all of these requirements. Therefore, the primary objective of the research presented in this thesis was to provide a methodology that is capable of characterizing concurrently the three-dimensional RSD and RID in optical fibers and fiber-based devices. This research represents a detailed study of the requirements for characterizing optical fibers and how these requirements are met through appropriate data analysis and experimental apparatus design and implementation. To validate the developed methodology, the secondary objective of this research was to characterize both unperturbed and modified optical fibers. The RSD and the RID were measured in a standard telecommunications-grade optical fiber, Corning SMF-28. The effects of cleaving this fiber were also analyzed and the longitudinal variations that result from cleaving were explored for the first time. The fabrication of carbon-dioxide-laser-induced (CO2 -laser-induced) LPFGs was also examined. These devices provide many of the functionalities required for fiber-based communications components as well as fiber-based sensors, and they offer relaxed fabrication requirements when compared to LPFGs fabricated by other methods. The developed methodology was used to perform the first measurements of the changes that occur in the RSD and the RID during LPFG fabrication. The analysis of these measurements ties together many of the existing theories of CO2-laser-induced LPFG fabrication to present a more coherent understanding of the processes that occur. In addition, new evidence provides detailed information on the functional form of the RSD and the RID in LPFGs. This information is crucial for the modeling of LPFG behavior, for the design of LPFGs for specific applications, for the tailoring of fabrication parameters to meet design requirements, and for understanding the limitations of LPFG fabrication in commercial optical fibers. Future areas of research concerning the improvement of the developed methodology, the need to characterize other fibers and fiber-based devices, and the characterization of CO2-laser-induced LPFGs are identified and discussed.

Ceramic Fiber Structures for Cryogenic Load-Bearing Applications

NASA Technical Reports Server (NTRS)

Jaskowiak, Martha H.; Eckel, Andrew J.

2009-01-01

This invention is intended for use as a load-bearing device under cryogenic temperatures and/or abrasive conditions (i.e., during missions to the Moon). The innovation consists of small-diameter, ceramic fibers that are woven or braided into devices like ropes, belts, tracks, or cables. The fibers can be formed from a variety of ceramic materials like silicon carbide, carbon, aluminosilicate, or aluminum oxide. The fiber architecture of the weave or braid is determined by both the fiber properties and the mechanical requirements of the application. A variety of weave or braid architectures is possible for this application. Thickness of load-bearing devices can be achieved by using either a 3D woven structure, or a layered, 2D structure. For the prototype device, a belt approximately 0.10 in. (0.25 cm) thick, and 3.0 in. (7.6 cm) wide was formed by layering and stitching a 2D aluminosilicate fiber weave.

Hybrid optical fiber add-drop filter based on wavelength dependent light coupling between micro/nano fiber ring and side-polished fiber

PubMed Central

Yu, Jianhui; Jin, Shaoshen; Wei, Qingsong; Zang, Zhigang; Lu, Huihui; He, Xiaoli; Luo, Yunhan; Tang, Jieyuan; Zhang, Jun; Chen, Zhe

2015-01-01

In this paper, we report our experimental study on directly coupling a micro/nano fiber (MNOF) ring with a side-polished fiber(SPF). As a result of the study, the behavior of an add-drop filter was observed. The demonstrated add-drop filter explored the wavelength dependence of light coupling between a MNOF ring and a SPF. The characteristics of the filter and its performance dependence on the MNOF ring diameter were investigated experimentally. The investigation resulted in an empirically obtained ring diameter that showed relatively good filter performance. Since light coupling between a (MNOF) and a conventional single mode fiber has remained a challenge in the photonic integration community, the present study may provide an alternative way to couple light between a MNOF device and a conventional single mode fiber based device or system. The hybridization approach that uses a SPF as a platform to integrate a MNOF device may enable the realization of other all-fiber optical hybrid devices. PMID:25578467

Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

PubMed

Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

2014-08-20

Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fiber optic monitoring device

DOEpatents

Samborsky, James K.

1993-01-01

A device for the purpose of monitoring light transmissions in optical fibers comprises a fiber optic tap that optically diverts a fraction of a transmitted optical signal without disrupting the integrity of the signal. The diverted signal is carried, preferably by the fiber optic tap, to a lens or lens system that disperses the light over a solid angle that facilitates viewing. The dispersed light indicates whether or not the monitored optical fiber or system of optical fibers is currently transmitting optical information.

Enhanced fill factor of tandem organic solar cells incorporating a diketopyrrolopyrrole-based low-bandgap polymer and optimized interlayer.

PubMed

Wang, Dong Hwan; Kyaw, Aung Ko Ko; Park, Jong Hyeok

2015-01-01

We demonstrate that reproducible results can be obtained from tandem solar cells based on the wide-bandgap poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4,7-di-2-thienyl-2',1',3'-benzothiadiazole] (PCDTBT) and the diketopyrrolopyrrole (DPP)-based narrow bandgap polymer (DT-PDPP2T-TT) with a decyltetradecyl (DT) and an electron-rich 2,5-di-2-thienylthieno[3,2-b]thiophene (2T-TT) group fabricated using an optimized interlayer (ZnO NPs/ph-n-PEDOT:PSS) [NPs: nanoparticles; ph-n: pH-neutral PEDOT: poly(3,4-ethylenedioxythiophene); PSS: polystyrene sulfonate]. The tandem cells are fabricated by applying a simple process without thermal annealing. The ZnO NP interlayer operates well when the ZnO NPs are dispersed in 2-methoxyethanol, as no precipitation and chemical reactions occur. In addition to the ZnO NP film, we used neutral PEDOT:PSS as a second interlayer which is not affect to the sequential deposited bulk heterojunction (BHJ) active layer of acidification. The power conversion efficiency (PCE) of a tandem device reaches 7.4 % (open-circuit voltage VOC =1.53 V, short-circuit current density JSC =7.3 mA cm(-2) , and fill factor FF=67 %). Furthermore, FF is increased to up to 71 % when another promising large bandgap (bandgap ∼1.94 eV) polymer (PBnDT-FTAZ) is used. The surface of each layer with nanoscale morphology (BHJ1/ZnO NPs film/ph-n-PEDOT:PSS/BHJ2) was examined by means of AFM analysis during sequential processing. The combination of these factors, efficient DPP-based narrow bandgap material and optimized interlayer, leads to the high FF (average approaches 70 %) and reproducibly operating tandem BHJ solar cells. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimal design of tunable phononic bandgap plates under equibiaxial stretch

NASA Astrophysics Data System (ADS)

Hedayatrasa, Saeid; Abhary, Kazem; Uddin, M. S.; Guest, James K.

2016-05-01

Design and application of phononic crystal (PhCr) acoustic metamaterials has been a topic with tremendous growth of interest in the last decade due to their promising capabilities to manipulate acoustic and elastodynamic waves. Phononic controllability of waves through a particular PhCr is limited only to the spectrums located within its fixed bandgap frequency. Hence the ability to tune a PhCr is desired to add functionality over its variable bandgap frequency or for switchability. Deformation induced bandgap tunability of elastomeric PhCr solids and plates with prescribed topology have been studied by other researchers. Principally the internal stress state and distorted geometry of a deformed phononic crystal plate (PhP) changes its effective stiffness and leads to deformation induced tunability of resultant modal band structure. Thus the microstructural topology of a PhP can be altered so that specific tunability features are met through prescribed deformation. In the present study novel tunable PhPs of this kind with optimized bandgap efficiency-tunability of guided waves are computationally explored and evaluated. Low loss transmission of guided waves throughout thin walled structures makes them ideal for fabrication of low loss ultrasound devices and structural health monitoring purposes. Various tunability targets are defined to enhance or degrade complete bandgaps of plate waves through macroscopic tensile deformation. Elastomeric hyperelastic material is considered which enables recoverable micromechanical deformation under tuning finite stretch. Phononic tunability through stable deformation of phononic lattice is specifically required and so any topology showing buckling instability under assumed deformation is disregarded. Nondominated sorting genetic algorithm (GA) NSGA-II is adopted for evolutionary multiobjective topology optimization of hypothesized tunable PhP with square symmetric unit-cell and relevant topologies are analyzed through finite element method. Following earlier studies by the authors, specialized GA algorithm, topology mapping, assessment and analysis techniques are employed to get feasible porous topologies of assumed thick PhP, efficiently.

Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects

NASA Astrophysics Data System (ADS)

Kaleem, Mohammad; Nazir, Sajid; Saqib, Nazar Abbas

2016-03-01

Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.

Energy exchange properties during second-harmonic generation in finite one-dimensional photonic band-gap structures with deep gratings.

PubMed

D'Aguanno, Giuseppe; Centini, Marco; Scalora, Michael; Sibilia, Concita; Bertolotti, Mario; Bloemer, Mark J; Bowden, Charles M

2003-01-01

We study second-harmonic generation in finite, one-dimensional, photonic band-gap structures with large index contrast in the regime of pump depletion and global phase-matching conditions. We report a number of surprising results: above a certain input intensity, field dynamics resemble a multiwave mixing process, where backward and forward components compete for the available energy; the pump field is mostly reflected, revealing a type of optical limiting behavior; and second-harmonic generation becomes balanced in both directions, showing unusual saturation effects with increasing pump intensity. This dynamics was unexpected, and it is bound to influence the way one goes about thinking and designing nonlinear frequency conversion devices in a practical way.

Semi-transparent perovskite solar cells for tandems with silicon and CIGS

DOE PAGES

Bailie, Colin D.; Christoforo, M. Greyson; Mailoa, Jonathan P.; ...

2014-12-23

A promising approach for upgrading the performance of an established low-bandgap solar technology without adding much cost is to deposit a high bandgap polycrystalline semiconductor on top to make a tandem solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS) and low-quality multicrystalline silicon (Si) to achieve solid-state polycrystalline tandem solar cells with a net improvement in efficiency over the bottom cell alone. Furthermore, this work paves the way for integrating perovskites into a low-costmore » and high-efficiency (>25%) tandem cell.« less

Review of betavoltaic energy conversion

NASA Astrophysics Data System (ADS)

Olsen, Larry C.

1993-05-01

Betavoltaic energy conversion refers to the generation of power by coupling a beta source to a semiconductor junction device. The theory of betavoltaic energy conversion and some past studies of the subject are briefly reviewed. Calculations of limiting efficiencies for semiconductor cells versus bandgap are presented along with specific studies for Pm-147 and Ni-63 fueled devices. The approach used for fabricating Pm-147 fueled batteries by the author in the early 1970's is reviewed. Finally, the potential performance of advanced betavoltaic power sources is considered.

Review of betavoltaic energy conversion

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1993-01-01

Betavoltaic energy conversion refers to the generation of power by coupling a beta source to a semiconductor junction device. The theory of betavoltaic energy conversion and some past studies of the subject are briefly reviewed. Calculations of limiting efficiencies for semiconductor cells versus bandgap are presented along with specific studies for Pm-147 and Ni-63 fueled devices. The approach used for fabricating Pm-147 fueled batteries by the author in the early 1970's is reviewed. Finally, the potential performance of advanced betavoltaic power sources is considered.

On the mechanism of bandgap formation in locally resonant finite elastic metamaterials

NASA Astrophysics Data System (ADS)

Sugino, Christopher; Leadenham, Stephen; Ruzzene, Massimo; Erturk, Alper

2016-10-01

Elastic/acoustic metamaterials made from locally resonant arrays can exhibit bandgaps at wavelengths much longer than the lattice size for various applications spanning from low-frequency vibration/sound attenuation to wave guiding and filtering in mechanical and electromechanical devices. For an effective use of such locally resonant metamaterial concepts in finite structures, it is required to bridge the gap between the lattice dispersion characteristics and modal behavior of the host structure with its resonators. To this end, we develop a novel argument for bandgap formation in finite-length elastic metamaterial beams, relying on the modal analysis and the assumption of infinitely many resonators. We show that the dual problem to wave propagation through an infinite periodic beam is the modal analysis of a finite beam with an infinite number of resonators. A simple formula that depends only on the resonator natural frequency and total mass ratio is derived for placing the bandgap in a desired frequency range, yielding an analytical insight and a rule of thumb for design purposes. A method for understanding the importance of a resonator location and mass is discussed in the context of a Riemann sum approximation of an integral, and a method for determining the optimal number of resonators for a given set of boundary conditions and target frequency is introduced. The simulations of the theoretical framework are validated by experiments for bending vibrations of a locally resonant cantilever beam.

Application of closed-form solutions to a mesh point field in silicon solar cells

NASA Technical Reports Server (NTRS)

Lamorte, M. F.

1985-01-01

A computer simulation method is discussed that provides for equivalent simulation accuracy, but that exhibits significantly lower CPU running time per bias point compared to other techniques. This new method is applied to a mesh point field as is customary in numerical integration (NI) techniques. The assumption of a linear approximation for the dependent variable, which is typically used in the finite difference and finite element NI methods, is not required. Instead, the set of device transport equations is applied to, and the closed-form solutions obtained for, each mesh point. The mesh point field is generated so that the coefficients in the set of transport equations exhibit small changes between adjacent mesh points. Application of this method to high-efficiency silicon solar cells is described; and the method by which Auger recombination, ambipolar considerations, built-in and induced electric fields, bandgap narrowing, carrier confinement, and carrier diffusivities are treated. Bandgap narrowing has been investigated using Fermi-Dirac statistics, and these results show that bandgap narrowing is more pronounced and that it is temperature-dependent in contrast to the results based on Boltzmann statistics.

Active thermal fine laser tuning in a broad spectral range and optical properties of cholesteric liquid crystal.

PubMed

Jeong, Mi-Yun; Kwak, Keumcheol

2016-11-20

In this study, we achieved active fine laser tuning in a broad spectral range with dye-doped cholesteric liquid crystal wedge-type cells through temperature control. The spatial pitch gradient of each position of the wedge cell at room temperature was almost maintained after developing a temperature gradient. To achieve the maximum tuning range, the chiral dopant concentration, thickness, thickness gradient, and temperature gradient on the wedge cell should be matched properly. In order to understand the laser tuning mechanism for temperature change, we studied the temperature dependence of optical properties of the photonic bandgap of cholesteric liquid crystals. In our cholesteric liquid crystal samples, when temperature was increased, photonic bandgaps were shifted toward blue, while the width of the photonic bandgap was decreased, regardless of whether the helicity was left-handed or right-handed. This is mainly due to the combination of decreased refractive indices, higher molecular anisotropy of chiral molecules, and increased chiral molecular solubility. We envisage that this kind of study will prove useful in the development of practical active tunable CLC laser devices.

Hyperuniform Disordered photonic bandgap materials, from 2D to 3D, and their applications

NASA Astrophysics Data System (ADS)

Man, Weining; Florescu, Marian; Sahba, Shervin; Sellers, Steven

Recently, hyperuniform disordered systems attracted increasing attention due to their unique physical properties and the potential possibilities of self-assembling them. We had introduced a class of 2D hyperuniform disordered (HUD) photonic bandgap (PBG) materials enabled by a novel constrained optimization method for engineering the material's isotropic photonic bandgap. The intrinsic isotropy in these disordered structures is an inherent advantage associated with the lack of crystalline order, offering unprecedented freedom for functional defect design impossible to achieve in photonic crystals. Beyond our previous experimental work using macroscopic samples with microwave radiation, we demonstrated functional devices based on submicron-scale planar hyperuniform disordered PBG structures further highlight their ability to serve as highly compact, flexible and energy-efficient platforms for photonic integrated circuits. We further extended the design, fabrication, and characterization of the disordered photonic system into 3D. We also identify local self-uniformity as a novel measure of a disordered network's internal structural similarity, which we found crucial for photonic band gap formation. National Science Foundations award DMR-1308084.

Space-coiling fractal metamaterial with multi-bandgaps on subwavelength scale

NASA Astrophysics Data System (ADS)

Man, Xianfeng; Liu, Tingting; Xia, Baizhan; Luo, Zhen; Xie, Longxiang; Liu, Jian

2018-06-01

Acoustic metamaterials are remarkably different from conventional materials, as they can flexibly manipulate and control the propagation of sound waves. Unlike the locally resonant metamaterials introduced in earlier studies, we designed an ultraslow artificial structure with a sound speed much lower than that in air. In this paper, the space-coiling approach is proposed for achieving artificial metamaterial for extremely low-frequency airborne sound. In addition, the self-similar fractal technique is utilized for designing space-coiling Mie-resonance-based metamaterials (MRMMs) to obtain a band-dispersive spectrum. The band structures of two-dimensional (2D) acoustic metamaterials with different fractal levels are illustrated using the finite element method. The low-frequency bandgap can easily be formed, and multi-bandgap properties are observed in high-level fractals. Furthermore, the designed MRMMs with higher order fractal space coiling shows a good robustness against irregular arrangement. Besides, the proposed artificial structure was found to modify and control the radiation field arbitrarily. Thus, this work provides useful guidelines for the design of acoustic filtering devices and acoustic wavefront shaping applications on the subwavelength scale.

Hollow fiber apparatus and use thereof for fluids separations and heat and mass transfers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bikson, Benjamin; Etter, Stephen; Ching, Nathaniel

A hollow fiber fluid separation device includes a hollow fiber cartridge, comprising a plurality of hollow fiber membranes arranged around a central tubular core, a first tubesheet and a second tubesheet encapsulating respective distal ends of the hollow fiber bundle. The tubesheets have boreholes in fluid communication with bores of the hollow fiber membrane. In at least one of the tubesheets, the boreholes are formed radially and are in communication with the central tubular core. The hollow fiber fluid separation device can be utilized in liquid separation applications such as ultrafiltration and in gas separation processes such as air separation.more » The design disclosed herein is light weight and compact and is particularly advantageous at high operating temperatures when the pressure of the feed fluid introduced into the bores of hollow fibers is higher than the pressure on the shell side of the device.« less

Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations

NASA Astrophysics Data System (ADS)

Yuan, Junhui; Yu, Niannian; Wang, Jiafu; Xue, Kan-Hao; Miao, Xiangshui

2018-04-01

The successful fabrication of two-dimensional lateral heterostructures (LHS's) has opened up unprecedented opportunities in material science and device physics. It is therefore highly desirable to search for more suitable materials to create such heterostructures for next-generation devices. Here, we investigate a novel lateral heterostructure composed of monolayer ZrS2 and HfS2 based on density functional theory. The phonon dispersion and ab initio molecular dynamics analysis indicate its good kinetic and thermodynamic stability. Remarkably, we find that these lateral heterostructures exhibit an indirect to direct bandgap transition, in contrast to the intrinsic indirect bandgap nature of ZrS2 and HfS2. The type-II alignment and chemical bonding across the interline have also been revealed. The tensile strain is proved to be an efficient way to modulate the band structure. Finally, we further discuss other three stable lateral heterostructures: (ZrSe2)2(HfSe2)2 LHS, (ZrS2)2(ZrSe2)2 LHS and (HfS2)2(HfSe2)2 LHS. Generally, the lateral heterostructures of monolayer ZrS2 and HfS2 are of excellent electrical properties, and may find potential applications for future electronic devices.

Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors.

PubMed

Yang, Shengxue; Tongay, Sefaattin; Li, Yan; Yue, Qu; Xia, Jian-Bai; Li, Shun-Shen; Li, Jingbo; Wei, Su-Huai

2014-07-07

The ability to control the appropriate layer thickness of transition metal dichalcogenides (TMDs) affords the opportunity to engineer many properties for a variety of applications in possible technological fields. Here we demonstrate that band-gap and mobility of ReSe2 nanosheet, a new member of the TMDs, increase when the layer number decreases, thus influencing the performances of ReSe2 transistors with different layers. A single-layer ReSe2 transistor shows much higher device mobility of 9.78 cm(2) V(-1) s(-1) than few-layer transistors (0.10 cm(2) V(-1) s(-1)). Moreover, a single-layer device shows high sensitivity to red light (633 nm) and has a light-improved mobility of 14.1 cm(2) V(-1) s(-1). Molecular physisorption is used as "gating" to modulate the carrier density of our single-layer transistors, resulting in a high photoresponsivity (Rλ) of 95 A W(-1) and external quantum efficiency (EQE) of 18 645% in O2 environment. This work highlights the fact that the properties of ReSe2 can be tuned in terms of the number of layers and gas molecule gating, and single-layer ReSe2 with appropriate band-gap is a promising material for future functional device applications.

Electrically Driving Donor Spin Qubits in Silicon Using Photonic Bandgap Resonators

NASA Astrophysics Data System (ADS)

Sigillito, A. J.; Tyryshkin, A. M.; Lyon, S. A.

In conventional experiments, donor nuclear spin qubits in silicon are driven using radiofrequency (RF) magnetic fields. However, magnetic fields are difficult to confine at the nanoscale, which poses major issues for individually addressable qubits and device scalability. Ideally one could drive spin qubits using RF electric fields, which are easy to confine, but spins do not naturally have electric dipole transitions. In this talk, we present a new method for electrically controlling nuclear spin qubits in silicon by modulating the hyperfine interaction between the nuclear spin qubit and the donor-bound electron. By fabricating planar superconducting photonic bandgap resonators, we are able to use pulsed electron-nuclear double resonance (ENDOR) techniques to selectively probe both electrically and magnetically driven transitions for 31P and 75As nuclear spin qubits. The electrically driven spin resonance mechanism allows qubits to be driven at either their transition frequency, or at one-half their transition frequency, thus reducing bandwidth requirements for future quantum devices. Moreover, this form of control allows for higher qubit densities and lower power requirements compared to magnetically driven schemes. In our proof-of-principle experiments we demonstrate electrically driven Rabi frequencies of approximately 50 kHz for widely spaced (10 μm) gates which should be extendable to MHz for nanoscale devices.

Screening of inorganic wide-bandgap p-type semiconductors for high performance hole transport layers in organic photovoltaic devices

NASA Astrophysics Data System (ADS)

Ginley, David; Zakutayev, Andriy; Garcia, Andreas; Widjonarko, Nicodemus; Ndione, Paul; Sigdel, Ajaya; Parilla, Phillip; Olson, Dana; Perkins, John; Berry, Joseph

2011-03-01

We will report on the development of novel inorganic hole transport layers (HTL) for organic photovoltaics (OPV). All the studied materials belong to the general class of wide-bandgap p-type oxide semiconductors. Potential candidates suitable for HTL applications include SnO, NiO, Cu2O (and related CuAlO2, CuCrO2, SrCu2O4 etc) and Co3O4 (and related ZnCo2O4, NiCo2O4, MgCo2O4 etc.). Materials have been optimized by high-throughput combinatorial approaches. The thin films were deposited by RF sputtering and pulsed laser deposition at ambient and elevated temperatures. Performance of the inorganic HTLs and that of the reference organic PEDOT:PSS HTL were compared by measuring the power conversion efficiencies and spectral responses of the P3HT/PCBM- and PCDTBT/PCBM-based OPV devices. Preliminary results indicate that Co3O4-based HTLs have performance comparable to that of our previously reported NiOs and PEDOT:PSS HTLs, leading to a power conversion efficiency of about 4 percent. The effect of composition and work function of the ternary materials on their performance in OPV devices is under investigation.

Scale factor gage for fiber optics inspection device

NASA Technical Reports Server (NTRS)

Mcmahon, W.; Sugg, F. E.

1971-01-01

Flexible wire device, fastened along outside of fiber bundle from viewing portion to tip, positions calibrated adjustable gage in field of view. Scale factor is determined from known magnification characteristics of fiber optics system or from graduations on gage tip.

Development of thermoelectric fibers for miniature thermoelectric devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Fei; Menchhofer, Paul A.; Kiggans, Jr., James O.

Miniature thermoelectric (TE) devices may be used in a variety of applications such as power sources of small sensors, temperature regulation of precision electronics, etc. Reducing the size of TE elements may also enable design of novel devices with unique form factor and higher device efficiency. Current industrial practice of fabricating TE devices usually involves mechanical removal processes that not only lead to material loss but also limit the geometry of the TE elements. In this project, we explored a powder-processing method for the fabrication of TE fibers with large length-to-area ratio, which could be potentially used for miniature TEmore » devices. Powders were milled from Bi2Te3-based bulk materials and then mixed with a thermoplastic resin dissolved in an organic solvent. Through an extrusion process, flexible, continuous fibers with sub-millimeter diameters were formed. The polymer phase was then removed by sintering. Sintered fibers exhibited similar Seebeck coefficients to the bulk materials. Moreover, their electrical resistivity was much higher, which might be related to the residual porosity and grain boundary contamination. Prototype miniature uni-couples fabricated from these fibers showed a linear I-V behavior and could generate millivolt voltages and output power in the nano-watt range. Further development of these TE fibers requires improvement in their electrical conductivities, which needs a better understanding of the causes that lead to the low conductivity in the sintered fibers.« less

Development of thermoelectric fibers for miniature thermoelectric devices

DOE PAGES

Ren, Fei; Menchhofer, Paul A.; Kiggans, Jr., James O.; ...

2016-09-23

Miniature thermoelectric (TE) devices may be used in a variety of applications such as power sources of small sensors, temperature regulation of precision electronics, etc. Reducing the size of TE elements may also enable design of novel devices with unique form factor and higher device efficiency. Current industrial practice of fabricating TE devices usually involves mechanical removal processes that not only lead to material loss but also limit the geometry of the TE elements. In this project, we explored a powder-processing method for the fabrication of TE fibers with large length-to-area ratio, which could be potentially used for miniature TEmore » devices. Powders were milled from Bi2Te3-based bulk materials and then mixed with a thermoplastic resin dissolved in an organic solvent. Through an extrusion process, flexible, continuous fibers with sub-millimeter diameters were formed. The polymer phase was then removed by sintering. Sintered fibers exhibited similar Seebeck coefficients to the bulk materials. Moreover, their electrical resistivity was much higher, which might be related to the residual porosity and grain boundary contamination. Prototype miniature uni-couples fabricated from these fibers showed a linear I-V behavior and could generate millivolt voltages and output power in the nano-watt range. Further development of these TE fibers requires improvement in their electrical conductivities, which needs a better understanding of the causes that lead to the low conductivity in the sintered fibers.« less

Gallium nitride-based micro-opto-electro-mechanical systems

NASA Astrophysics Data System (ADS)

Stonas, Andreas Robert

Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial stresses, which are required to produce significantly larger tuning (up to several hundred meV) in quantum well-based devices.

Wide Bandgap Superlattice Power Devices for Army Hybrid Electric Power Systems

DTIC Science & Technology

2006-11-01

years, with many rounds of SBIR Phase I and Phase II, plus several subcontracts for ITP (integrated product teams) supported by DMEA and TARDEC of...higher, and upon which IBM recently announced that a world record of MOSFET speed at over 300GHz has been realized. 11. HIGH TEMPERATURE

Structural and compositional dependence of the CdTexSe1−x alloy layer photoactivity in CdTe-based solar cells

PubMed Central

Poplawsky, Jonathan D.; Guo, Wei; Paudel, Naba; Ng, Amy; More, Karren; Leonard, Donovan; Yan, Yanfa

2016-01-01

The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTexSe1−x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTexSe1−x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTexSe1−x alloy with respect to the degree of Se diffusion. The results show that the CdTexSe1−x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations. PMID:27460872

A hot-electron thermophotonic solar cell demonstrated by thermal up-conversion of sub-bandgap photons

PubMed Central

Farrell, Daniel J.; Sodabanlu, Hassanet; Wang, Yunpeng; Sugiyama, Masakazu; Okada, Yoshitaka

2015-01-01

The direct conversion of solar energy to electricity can be broadly separated into two main categories: photovoltaics and thermal photovoltaics, where the former utilizes gradients in electrical potential and the latter thermal gradients. Conventional thermal photovoltaics has a high theoretical efficiency limit (84%) but in practice cannot be easily miniaturized and is limited by the engineering challenges of sustaining large (>1,000 K) temperature gradients. Here we show a hot-carrier-based thermophotonic solar cell, which combines the compact nature of photovoltaic devices with the potential to reach the high-efficiency regime of thermal photovoltaics. In the device, a thermal gradient of 500 K is established by hot electrons, under Stokes illumination, rather than by raising the temperature of the material itself. Under anti-Stokes (sub-bandgap) illumination we observe a thermal gradient of ∼20 K, which is maintained by steady-state Auger heating of carriers and corresponds to a internal thermal up-conversion efficiency of 30% between the collector and solar cell. PMID:26541415

Variations of Contact Resistance in Dual-Gated Monolayer Molybdenum Disulfide Transistors Depending on Gate Bias Selection

NASA Astrophysics Data System (ADS)

Tran, P. X.

2017-06-01

Monolayer molybdenum disulfide (MoS2) is considered an alternative two-dimensional material for high performance ultra-thin field-effect transistors. MoS2 is a triple atomic layer with a direct 1.8 eV bandgap. Bulk MoS2 has an additional indirect bandgap of 1.2 eV, which leads to high current on/off ratio around 108. Flakes of MoS2 can be obtained by mechanical exfoliation or grown by chemical vapor deposition. Intrinsic cut-off frequency of multilayer MoS2 transistor has reached 42 GHz. Chemical doping of MoS2 is challenging and results in reduction of contact resistance. This paper focuses on modeling of dual-gated monolayer MoS2 transistors with effective mobility of carriers varying from 0.6 cm2/V s to 750 cm2/V s. In agreement with experimental data, the model demonstrates that in back-gate bias devices, the contact resistance decreases almost exponentially with increasing gate bias, whereas in top-gate bias devices, the contact resistance stays invariant when varying gate bias.

Structural and compositional dependence of the CdTexSe 1-x alloy layer photoactivity in CdTe-based solar cells

DOE PAGES

Poplawsky, Jonathan D.; Guo, Wei; Paudel, Naba; ...

2016-07-27

The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTe xSe 1₋x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTe xSe 1₋x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTe xSe 1₋xmore » alloy with respect to the degree of Se diffusion. Finally, the results show that the CdTe xSe 1₋x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations.« less

Incorporating fluorinated moieties in fully conjugated donor-acceptor block copolymers

NASA Astrophysics Data System (ADS)

Lee, Youngmin; Wang, Qing; Gomez, Enrique D.

Fully conjugated donor-acceptor block copolymers are promising candidates for photovoltaics due to their ability to microphase separate at length scales commensurate with exciton diffusion lengths. These materials can also serve as model systems to study the relationship between molecular structure, microstructure, and optoelectronic properties of conjugated polymers. The development of new donor-acceptor block copolymers relies on the manipulation of the chemical structure to fine tune properties and improve overall performance when employed in photovoltaic devices. To this end, we have demonstrated the incorporation of fluorinated moieties in conjugated block copolymers. The introduction of fluorine, a strong electron withdrawing element, is known to influence phase separation and the bandgap, and as a result, optoelectronic properties. Fluorine was introduced to the acceptor block of poly(3-hexylthiophene-2,5-diyl)-block-poly((9,9-bis(2-octyl)fluorene-2,7-diyl)-alt-(4,7-di(thiophene-2-yl)-2,1,3-benzothiadiazole)-5 ',5?-diyl) (P3HT- b-PFTBT). PFTBTs were prepared with di-fluorinated and mono-fluorinated TBT. We find that fluorination impacts the bandgap, morphology and performance in devices.

Tapered rib fiber coupler for semiconductor optical devices

DOEpatents

Vawter, Gregory A.; Smith, Robert Edward

2001-01-01

A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.

Carbon-Nanotube Fibers for Wearable Devices and Smart Textiles.

PubMed

Di, Jiangtao; Zhang, Xiaohua; Yong, Zhenzhong; Zhang, Yongyi; Li, Da; Li, Ru; Li, Qingwen

2016-12-01

Carbon-nanotube (CNT) fibers integrate such properties as high mechanical strength, extraordinary structural flexibility, high thermal and electrical conductivities, novel corrosion and oxidation resistivities, and high surface area, which makes them a very promising candidate for next-generation smart textiles and wearable devices. A brief review of the preparation of CNT fibers and recently developed CNT-fiber-based flexible and functional devices, which include artificial muscles, electrochemical double-layer capacitors, lithium-ion batteries, solar cells, and memristors, is presented. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Novel high-brightness fiber coupled diode laser device

NASA Astrophysics Data System (ADS)

Haag, Matthias; Köhler, Bernd; Biesenbach, Jens; Brand, Thomas

2007-02-01

High brightness becomes more and more important in diode laser applications for fiber laser pumping and materials processing. For OEM customers fiber coupled devices have great advantages over direct beam modules: the fiber exit is a standardized interface, beam guiding is easy with nearly unlimited flexibility. In addition to the transport function the fiber serves as homogenizer: the beam profile of the laser radiation emitted from a fiber is symmetrical with highly repeatable beam quality and pointing stability. However, efficient fiber coupling requires an adaption of the slow-axis beam quality to the fiber requirements. Diode laser systems based on standard 10mm bars usually employ beam transformation systems to rearrange the highly asymmetrical beam of the laser bar or laser stack. These beam transformation systems (prism arrays, lens arrays, fiber bundles etc.) are expensive and become inefficient with increasing complexity. This is especially true for high power devices with small fiber diameters. On the other hand, systems based on single emitters are claimed to have good potential in cost reduction. Brightness of the inevitable fiber bundles, though, is limited due to inherent fill-factor losses. At DILAS a novel diode laser device has been developed combining the advantages of diode bars and single emitters: high brightness at high reliability with single emitter cost structure. Heart of the device is a specially tailored laser bar (T-Bar), which epitaxial and lateral structure was designed such that only standard fast- and slow-axis collimator lenses are required to couple the beam into a 200μm fiber. Up to 30 of these T-Bars of one wavelength can be combined to reach a total of > 500W ex fiber in the first step. Going to a power level of today's single emitter diodes even 1kW ex 200μm fiber can be expected.

Non-Fullerene Polymer Solar Cells Based on Alkylthio and Fluorine Substituted 2D-Conjugated Polymers Reach 9.5% Efficiency.

PubMed

Bin, Haijun; Zhang, Zhi-Guo; Gao, Liang; Chen, Shanshan; Zhong, Lian; Xue, Lingwei; Yang, Changduk; Li, Yongfang

2016-04-06

Non-fullerene polymer solar cells (PSCs) with solution-processable n-type organic semiconductor (n-OS) as acceptor have seen rapid progress recently owing to the synthesis of new low bandgap n-OS, such as ITIC. To further increase power conversion efficiency (PCE) of the devices, it is of a great challenge to develop suitable polymer donor material that matches well with the low bandgap n-OS acceptors thus providing complementary absorption and nanoscaled blend morphology, as well as suppressed recombination and minimized energy loss. To address this challenge, we synthesized three medium bandgap 2D-conjugated bithienyl-benzodithiophene-alt-fluorobenzotriazole copolymers J52, J60, and J61 for the application as donor in the PSCs with low bandgap n-OS ITIC as acceptor. The three polymers were designed with branched alkyl (J52), branched alkylthio (J60), and linear alkylthio (J61) substituent on the thiophene conjugated side chain of the benzodithiophene (BDT) units for studying effect of the substituents on the photovoltaic performance of the polymers. The alkylthio side chain, red-shifted absorption down-shifted the highest occupied molecular orbital (HOMO) level and improved crystallinity of the 2D conjugated polymers. With linear alkylthio side chain, the tailored polymer J61 exhibits an enhanced JSC of 17.43 mA/cm(2), a high VOC of 0.89 V, and a PCE of 9.53% in the best non-fullerene PSCs with the polymer as donor and ITIC as acceptor. To the best of our knowledge, the PCE of 9.53% is one of the highest values reported in literature to date for the non-fullerene PSCs. The results indicate that J61 is a promising medium bandgap polymer donor in non-fullerene PSCs.

Wide-Bandgap Semiconductor Devices for Automotive Applications

NASA Astrophysics Data System (ADS)

Sugimoto, M.; Ueda, H.; Uesugi, T.; Kachi, T.

2007-06-01

In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

High-Performance As-Cast Nonfullerene Polymer Solar Cells with Thicker Active Layer and Large Area Exceeding 11% Power Conversion Efficiency.

PubMed

Fan, Qunping; Wang, Yan; Zhang, Maojie; Wu, Bo; Guo, Xia; Jiang, Yufeng; Li, Wanbin; Guo, Bing; Ye, Chennan; Su, Wenyan; Fang, Jin; Ou, Xuemei; Liu, Feng; Wei, Zhixiang; Sum, Tze Chien; Russell, Thomas P; Li, Yongfang

2018-02-01

In this work, a nonfullerene polymer solar cell (PSC) based on a wide bandgap polymer donor PM6 containing fluorinated thienyl benzodithiophene (BDT-2F) unit and a narrow bandgap small molecule acceptor 2,2'-((2Z,2'Z)-((4,4,9,9-tetrahexyl-4,9-dihydro-s-indaceno[1,2-b:5,6-b']dithiophene-2,7-diyl)bis(methanylylidene))bis(3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile (IDIC) is developed. In addition to matched energy levels and complementary absorption spectrum with IDIC, PM6 possesses high crystallinity and strong π-π stacking alignment, which are favorable to charge carrier transport and hence suppress recombination in devices. As a result, the PM6:IDIC-based PSCs without extra treatments show an outstanding power conversion efficiency (PCE) of 11.9%, which is the record value for the as-cast PSC devices reported in the literature to date. Moreover, the device performances are insensitive to the active layer thickness (≈95-255 nm) and device area (0.20-0.81 cm 2 ) with PCEs of over 11%. Besides, the PM6:IDIC-based flexible PSCs with a large device area of 1.25 cm 2 exhibit a high PCE of 6.54%. These results indicate that the PM6:IDIC blend is a promising candidate for future roll-to-roll mass manufacturing and practical application of highly efficient PSCs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Femtosecond laser inscription of optical circuits in the cladding of optical fibers

NASA Astrophysics Data System (ADS)

Grenier, Jason R.

The aim of this dissertation was to address the question of whether the cladding of single-mode fibers (SMFs) could be modified to enable optical fibers to serve as a more integrated, highly functional platform for optical circuit devices that can efficiently interconnect with the pre-existing fiber core waveguide. The approach adopted in this dissertation was to employ femtosecond laser direct writing (FLDW), an inherently 3D fabrication technique that harnesses non-linear laser-material interactions to modify the fused silica fiber cladding. A fiber mounting and alignment technique was developed along with oil-immersion focusing to address the strong aberrations caused by the cylindrical fiber shape. The development of real-time device monitoring during the FLDW was instrumental to overcome the acute coupling sensitivity to laser alignment errors of +/-1 ?m positional uncertainty, and thereby opened a new practical direction for the precise fabrication of optical devices inside optical fibers. These powerful and flexible laser fabrication and characterization techniques were successfully employed to optimize optical waveguiding devices positioned within the core and cladding of optical fibers. X-, S-Bend, and directional couplers were developed to enable efficient coupling between the laser-formed cladding devices and the pre-existing core waveguide, enabling up to 62% power transfer over bandwidths up to 300 nm at telecommunication wavelengths. Precise alignment of femtosecond laser modification tracks were positioned inside or near the core waveguide of SMFs was further shown to enable a flexible reshaping of the optical properties to create multimode guiding sections arbitrarily along the fiber length. This core waveguide modification facilitated the precise formation of multimode interferometers along the core waveguide to precisely tailor the modal profiles, and control the spectral and polarization response. In-fiber multimode interference (MMI) splitters and couplers were fabricated with coupling ratios from 2% to 50% over a broad 350 nm bandwidth across the telecommunication band. Laser-induced birefringence was harnessed to generate polarization dependent MMI devices for strong polarization filtering (24 dB isolation), or polarization selective taps with up to 50% tapping efficiency over a 25 nm bandwidth. This dissertation is therefore the first demonstration of femtosecond laser direct writing as a flexible and monolithic means of embedding and integrating highly functional optical circuit devices within the cladding of optical fibers that can interconnect efficiently with the pre-existing fiber core waveguide. These developments represent a significant technological advancement for creating new 3D photonic integrated microsystems within the cladding of optical fibers and underpins a new technological platform of fiber cladding photonics.

Towards seamlessly-integrated textile electronics: methods to coat fabrics and fibers with conducting polymers for electronic applications.

PubMed

Allison, Linden; Hoxie, Steven; Andrew, Trisha L

2017-06-29

Traditional textile materials can be transformed into functional electronic components upon being dyed or coated with films of intrinsically conducting polymers, such as poly(aniline), poly(pyrrole) and poly(3,4-ethylenedioxythiophene). A variety of textile electronic devices are built from the conductive fibers and fabrics thus obtained, including: physiochemical sensors, thermoelectric fibers/fabrics, heated garments, artificial muscles and textile supercapacitors. In all these cases, electrical performance and device ruggedness is determined by the morphology of the conducting polymer active layer on the fiber or fabric substrate. Tremendous variation in active layer morphology can be observed with different coating or dyeing conditions. Here, we summarize various methods used to create fiber- and fabric-based devices and highlight the influence of the coating method on active layer morphology and device stability.

High Per formance and Flexible Supercapacitors based on Carbonized Bamboo Fibers for Wide Temperature Applications

PubMed Central

Zequine, Camila; Ranaweera, C. K.; Wang, Z.; Singh, Sweta; Tripathi, Prashant; Srivastava, O. N.; Gupta, Bipin Kumar; Ramasamy, K.; Kahol, P. K.; Dvornic, P. R.; Gupta, Ram K.

2016-01-01

High performance carbonized bamboo fibers were synthesized for a wide range of temperature dependent energy storage applications. The structural and electrochemical properties of the carbonized bamboo fibers were studied for flexible supercapacitor applications. The galvanostatic charge-discharge studies on carbonized fibers exhibited specific capacity of ~510F/g at 0.4 A/g with energy density of 54 Wh/kg. Interestingly, the carbonized bamboo fibers displayed excellent charge storage stability without any appreciable degradation in charge storage capacity over 5,000 charge-discharge cycles. The symmetrical supercapacitor device fabricated using these carbonized bamboo fibers exhibited an areal capacitance of ~1.55 F/cm2 at room temperature. In addition to high charge storage capacity and cyclic stability, the device showed excellent flexibility without any degradation to charge storage capacity on bending the electrode. The performance of the supercapacitor device exhibited ~65% improvement at 70 °C compare to that at 10 °C. Our studies suggest that carbonized bamboo fibers are promising candidates for stable, high performance and flexible supercapacitor devices. PMID:27546225

High Per formance and Flexible Supercapacitors based on Carbonized Bamboo Fibers for Wide Temperature Applications.

PubMed

Zequine, Camila; Ranaweera, C K; Wang, Z; Singh, Sweta; Tripathi, Prashant; Srivastava, O N; Gupta, Bipin Kumar; Ramasamy, K; Kahol, P K; Dvornic, P R; Gupta, Ram K

2016-08-22

High performance carbonized bamboo fibers were synthesized for a wide range of temperature dependent energy storage applications. The structural and electrochemical properties of the carbonized bamboo fibers were studied for flexible supercapacitor applications. The galvanostatic charge-discharge studies on carbonized fibers exhibited specific capacity of ~510F/g at 0.4 A/g with energy density of 54 Wh/kg. Interestingly, the carbonized bamboo fibers displayed excellent charge storage stability without any appreciable degradation in charge storage capacity over 5,000 charge-discharge cycles. The symmetrical supercapacitor device fabricated using these carbonized bamboo fibers exhibited an areal capacitance of ~1.55 F/cm(2) at room temperature. In addition to high charge storage capacity and cyclic stability, the device showed excellent flexibility without any degradation to charge storage capacity on bending the electrode. The performance of the supercapacitor device exhibited ~65% improvement at 70 °C compare to that at 10 °C. Our studies suggest that carbonized bamboo fibers are promising candidates for stable, high performance and flexible supercapacitor devices.

High Per formance and Flexible Supercapacitors based on Carbonized Bamboo Fibers for Wide Temperature Applications

NASA Astrophysics Data System (ADS)

Zequine, Camila; Ranaweera, C. K.; Wang, Z.; Singh, Sweta; Tripathi, Prashant; Srivastava, O. N.; Gupta, Bipin Kumar; Ramasamy, K.; Kahol, P. K.; Dvornic, P. R.; Gupta, Ram K.

2016-08-01

High performance carbonized bamboo fibers were synthesized for a wide range of temperature dependent energy storage applications. The structural and electrochemical properties of the carbonized bamboo fibers were studied for flexible supercapacitor applications. The galvanostatic charge-discharge studies on carbonized fibers exhibited specific capacity of ~510F/g at 0.4 A/g with energy density of 54 Wh/kg. Interestingly, the carbonized bamboo fibers displayed excellent charge storage stability without any appreciable degradation in charge storage capacity over 5,000 charge-discharge cycles. The symmetrical supercapacitor device fabricated using these carbonized bamboo fibers exhibited an areal capacitance of ~1.55 F/cm2 at room temperature. In addition to high charge storage capacity and cyclic stability, the device showed excellent flexibility without any degradation to charge storage capacity on bending the electrode. The performance of the supercapacitor device exhibited ~65% improvement at 70 °C compare to that at 10 °C. Our studies suggest that carbonized bamboo fibers are promising candidates for stable, high performance and flexible supercapacitor devices.

Monitoring system of hydraulic lifting device based on the fiber optic sensors

NASA Astrophysics Data System (ADS)

Fajkus, Marcel; Nedoma, Jan; Novak, Martin; Martinek, Radek; Vanus, Jan; Mec, Pavel; Vasinek, Vladimir

2017-10-01

This article deals with the description of the monitoring system of hydraulic lifting device based on the fiber-optic sensors. For minimize the financial costs of the proposed monitoring system, the power evaluation of measured signal has been chosen. The solution is based on an evaluation of the signal obtained using the single point optic fiber sensors with overlapping reflective spectra. For encapsulation of the sensors was used polydimethylsiloxane (PDMS) polymer. To obtain a information of loading is uses the action of deformation of the lifting device on the pair single point optic fiber sensors mounted on the lifting device of the tested car. According to the proposed algorithm is determined information of pressure with an accuracy of +/- 5 %. Verification of the proposed system was realized on the various types of the tested car with different loading. The original contribution of the paper is to verify the new low-cost system for monitoring the hydraulic lifting device based on the fiber-optic sensors.

Characterization and Analysis of Multi-Quantum Well Solar Cells

NASA Astrophysics Data System (ADS)

Bradshaw, Geoffrey Keith

Multijunction (MJ) photovoltaics are the most efficient solar cells today. Under sufficient solar concentration, these devices can achieve over 44% efficiency, roughly twenty percentage points higher than single crystal silicon based solar cells. Current records for triple junction (3J) multijunction cells are being challenged and broken regularly. However, it is unclear at this time which method of device growth will ultimately produce an efficiency that approaches the Shockley-Queisser limit. Lattice-matched (LM) MJ cells offer benefits over metamorphic and/or inverted metamorphic cells in that the device can be grown continuously, require no extra fabrication steps, and will ultimate produce the highest material quality throughout all junctions. The efficiency of current 3JMJ cells composed of GaInP(1.8eV)/(In)GaAs(1.4eV)/Ge(0.7eV) is limited by the bandgap combination used in the structure. The low energy bandgap bottom Ge cell produces roughly twice as much current as the middle GaAs cell and results in a current mismatch that limits the total current and thus total efficiency. By replacing the middle GaAs subcell with a 1-1.2eV subcell, the current mismatch could be alleviated and the efficiency enhanced. Unfortunately, there are no semiconductors lattice-matched to GaAs/Ge with this bandgap. InGaAs, which has a larger lattice constant than GaAs/Ge, can be grown with the appropriate bandgap, but due to compressive stresses introduced during growth the thickness that can be grown is limited to tens of nanometers, thus limiting absorption and current production. However, by growing layers of tensile strained GaAsP with appropriate thickness and composition, the stresses introduced by the InGaAs can be balanced. By repeating this process and inserting these layers into the intrinsic region of the GaAs middle subcell, a low bandgap material with an effective lattice constant equal to that of GaAs is introduced while maintaining lattice-matching conditions. The InGaAs layers form quantum well capable of absorbing lower energy wavelengths than GaAs which leads to an increase in current. Absorption due to quantum wells is proportional to the number of quantum wells in the intrinsic region. Therefore, in order to grow the maximum number of the absorbing quantum wells within the background doping limited intrinsic region, it is necessary to reduce the width of the non-absorbing GaAsP barriers to as thin as possible. The research presented within shows this concept by exploring the fabrication and electrical characterization of these quantum well devices when balanced with ultra-thin GaAsP layers with very high phosphorus content (˜75-80%). By reducing the width of the barriers to approximately 30 A, tunneling of carriers dominates carrier transport across the structure as opposed to the traditional quantum well approach with very thick, low phosphorus GaAsP barriers that rely on thermionic emission of carriers to escape the InGaAs quantum wells. This research shows the strong effect and sensitivity to not only the thickness the GaAsP barriers, but also to the polarity of the device and the dependence of electric field. As well widths are decreased, quantum confinement of carriers within the InGaAs quantum wells increases. This leads to a blue-shift in the wavelengths of light absorbed and limits the current gain potential of the quantum well structure. To combat this blue-shift, the staggered MQW is introduced. The staggering technique can be use to not only improve wavelength absorption extension, but also lead to an enhancement in the absorption coefficient. These structures were also included into a GaInP/GaAs(MQW) tandem device to see the effects of the structure on the GaInP top cell.

Achievements and perspectives of fiber gyros

NASA Astrophysics Data System (ADS)

Boehm, Manfred

1986-01-01

After evaluating the development history and current status of fiber-optic gyros employing the Sagnac effect, attention is given to a novel class of inertial fiber-optic motion devices having their basis in the Kennedy-Thorndike (1932) interferometry experiments. These devices promise high performance strapdown inertial navigation systems that dispense with accelerometers. The prospective performance of such devices is discussed in light of an analysis of Sagnac, Michelson, and Kennedy-Thorndike interferometers.

21 CFR 878.3500 - Polytetrafluoroethylene with carbon fibers composite implant material.

Code of Federal Regulations, 2010 CFR

2010-04-01

... composite implant material. 878.3500 Section 878.3500 Food and Drugs FOOD AND DRUG ADMINISTRATION... Prosthetic Devices § 878.3500 Polytetrafluoroethylene with carbon fibers composite implant material. (a) Identification. A polytetrafluoroethylene with carbon fibers composite implant material is a porous device...

Direct writing of half-meter long CNT based fiber for flexible electronics.

PubMed

Huang, Sihan; Zhao, Chunsong; Pan, Wei; Cui, Yi; Wu, Hui

2015-03-11

Rapid construction of flexible circuits has attracted increasing attention according to its important applications in future smart electronic devices. Herein, we introduce a convenient and efficient "writing" approach to fabricate and assemble ultralong functional fibers as fundamental building blocks for flexible electronic devices. We demonstrated that, by a simple hand-writing process, carbon nanotubes (CNTs) can be aligned inside a continuous and uniform polymer fiber with length of more than 50 cm and diameters ranging from 300 nm to several micrometers. The as-prepared continuous fibers exhibit high electrical conductivity as well as superior mechanical flexibility (no obvious conductance increase after 1000 bending cycles to 4 mm diameter). Such functional fibers can be easily configured into designed patterns with high precision according to the easy "writing" process. The easy construction and assembly of functional fiber shown here holds potential for convenient and scalable fabrication of flexible circuits in future smart devices like wearable electronics and three-dimensional (3D) electronic devices.

Implementation of a Si/SiC hybrid optically controlled high-power switching device

NASA Astrophysics Data System (ADS)

Bhadri, Prashant; Ye, Kuntao; Guliants, E.; Beyette, Fred R., Jr.

2002-03-01

The ever-increasing performance and economy of operation requirements placed on commercial and military transport aircraft are resulting in very complex systems. As a result, the use of fiber optic component technology has lead to high data throughput, immunity to EMI, reduced certification and maintenance costs and reduced weight features. In particular, in avionic systems, data integrity and high data rates are necessary for stable flight control. Fly-by-Light systems that use optical signals to actuate the flight control surfaces of an aircraft have been suggested as a solution to the EMI problem in avionic systems. Current fly-by-light systems are limited by the lack of optically activated high-power switching devices. The challenge has been the development of an optoelectronic switching technology that can withstand the high power and harsh environmental conditions common in a flight surface actuation system. Wide bandgap semiconductors such as Silicon Carbide offer the potential to overcome both the temperature and voltage blocking limitations that inhibit the use of Silicon. Unfortunately, SiC is not optically active at the near IR wavelengths where communications grade light sources are readily available. Thus, we have proposed a hybrid device that combines a silicon based photoreceiver model with a SiC power transistor. When illuminated with the 5mW optical control signal the silicon chip produces a 15mA drive current for a SiC Darlington pair. The SiC Darlington pair then produces a 150 A current that is suitable for driving an electric motor with sufficient horsepower to actuate the control surfaces on an aircraft. Further, when the optical signal is turned off, the SiC is capable of holding off a 270 V potential to insure that the motor drive current is completely off. We present in this paper the design and initial tests from a prototype device that has recently been fabricated.

Electrical and optical performance of InAs/GaSb superlattice LWIR detectors

NASA Astrophysics Data System (ADS)

Field, M.; Sullivan, G. J.; Ikhlassi, A.; Grein, C.; Flatté, M. E.; Yang, H.; Zhong, M.; Weimer, M.

2006-02-01

InAs/GaSb superlattices are a promising technology for long-wave and very-long-wave infrared photodetectors. Present detectors at these wavelengths are mostly built using bulk HgCdTe (MCT) alloys, where the bandgap is controlled by the mercury-cadmium ratio. In contrast, InAs/GaSb heterostructures control the bandgap by engineering the widths of the layers making up the superlattice. This approach is expected to have important advantages over MCT, notably the tighter control of bandgap uniformity across a sample and the suppression of Auger recombination. InAs/GaSb superlattices have a potential advantage in temperature of operation, uniformity and yield. To realize their inherent potential, however, superlattice materials with low defect density and improved device characteristics must be demonstrated. Here, we report on the growth and characterization of a 9.7 μm cutoff wavelength InAs/GaSb superlattice detector, with a resistance-area product of R 0A = 11 Ωcm2 at 78 K, and an 8.5 μm cutoff diode with a resistance-area product of R 0A = 160 Ωcm2 at 78 K. The devices are p-i-n diodes with a relatively thin intrinsic region of depth 0.5 μm as the active absorbing region. The measured external quantum efficiencies of 7.1% and 5.4 % at 7.9 μm are not yet large enough to challenge the incumbent MCT technology, but suggest scaling the intrinsic region could be a way forward to potentially useful detectors.

Overcoming the black body limit in plasmonic and graphene near-field thermophotovoltaic systems.

PubMed

Ilic, Ognjen; Jablan, Marinko; Joannopoulos, John D; Celanovic, Ivan; Soljacić, Marin

2012-05-07

Near-field thermophotovoltaic (TPV) systems with carefully tailored emitter-PV properties show large promise for a new temperature range (600 – 1200K) solid state energy conversion, where conventional thermoelectric (TE) devices cannot operate due to high temperatures and far-field TPV schemes suffer from low efficiency and power density. We present a detailed theoretical study of several different implementations of thermal emitters using plasmonic materials and graphene. We find that optimal improvements over the black body limit are achieved for low bandgap semiconductors and properly matched plasmonic frequencies. For a pure plasmonic emitter, theoretically predicted generated power density of 14 W/cm2 and efficiency of 36% can be achieved at 600K (hot-side), for 0.17eV bandgap (InSb). Developing insightful approximations, we argue that large plasmonic losses can, contrary to intuition, be helpful in enhancing the overall near-field transfer. We discuss and quantify the properties of an optimal near-field photovoltaic (PV) diode. In addition, we study plasmons in graphene and show that doping can be used to tune the plasmonic dispersion relation to match the PV cell bangap. In case of graphene, theoretically predicted generated power density of 6(120) W/cm2 and efficiency of 35(40)% can be achieved at 600(1200)K, for 0.17eV bandgap. With the ability to operate in intermediate temperature range, as well as high efficiency and power density, near-field TPV systems have the potential to complement conventional TE and TPV solid state heat-to-electricity conversion devices.

Single-layer group IV-V and group V-IV-III-VI semiconductors: Structural stability, electronic structures, optical properties, and photocatalysis

NASA Astrophysics Data System (ADS)

Lin, Jia-He; Zhang, Hong; Cheng, Xin-Lu; Miyamoto, Yoshiyuki

2017-07-01

Recently, single-layer group III monochalcogenides have attracted both theoretical and experimental interest at their potential applications in photonic devices, electronic devices, and solar energy conversion. Excited by this, we theoretically design two kinds of highly stable single-layer group IV-V (IV =Si ,Ge , and Sn; V =N and P) and group V-IV-III-VI (IV =Si ,Ge , and Sn; V =N and P; III =Al ,Ga , and In; VI =O and S) compounds with the same structures with single-layer group III monochalcogenides via first-principles simulations. By using accurate hybrid functional and quasiparticle methods, we show the single-layer group IV-V and group V-IV-III-VI are indirect bandgap semiconductors with their bandgaps and band edge positions conforming to the criteria of photocatalysts for water splitting. By applying a biaxial strain on single-layer group IV-V, single-layer group IV nitrides show a potential on mechanical sensors due to their bandgaps showing an almost linear response for strain. Furthermore, our calculations show that both single-layer group IV-V and group V-IV-III-VI have absorption from the visible light region to far-ultraviolet region, especially for single-layer SiN-AlO and SnN-InO, which have strong absorption in the visible light region, resulting in excellent potential for solar energy conversion and visible light photocatalytic water splitting. Our research provides valuable insight for finding more potential functional two-dimensional semiconductors applied in optoelectronics, solar energy conversion, and photocatalytic water splitting.

Femtosecond laser direct-write of optofluidics in polymer-coated optical fiber

NASA Astrophysics Data System (ADS)

Joseph, Kevin A. J.; Haque, Moez; Ho, Stephen; Aitchison, J. Stewart; Herman, Peter R.

2017-03-01

Multifunctional lab in fiber technology seeks to translate the accomplishments of optofluidic, lab on chip devices into silica fibers. a robust, flexible, and ubiquitous optical communication platform that can underpin the `Internet of Things' with distributed sensors, or enable lab on chip functions deep inside our bodies. Femtosecond lasers have driven significant advances in three-dimensional processing, enabling optical circuits, microfluidics, and micro-mechanical structures to be formed around the core of the fiber. However, such processing typically requires the stripping and recoating of the polymer buffer or jacket, increasing processing time and mechanically weakening the device. This paper reports on a comprehensive assessment of laser damage in urethane-acrylate-coated fiber. The results show a sufficient processing window is available for femtosecond laser processing of the fiber without damaging the polymer jacket. The fiber core, cladding, and buffer could be simultaneously processed without removal of the buffer jacket. Three-dimensional lab in fiber devices were successfully fabricated by distortion-free immersionlens focusing, presenting fiber-cladding optical circuits and progress towards chemically-etched channels, microfluidic cavities, and MEMS structure inside buffer-coated fiber.

Optimization of absorption bands of dye-sensitized and perovskite tandem solar cells based on loss-in-potential values.

PubMed

Sobuś, Jan; Ziółek, Marcin

2014-07-21

A numerical study of optimal bandgaps of light absorbers in tandem solar cell configurations is presented with the main focus on dye-sensitized solar cells (DSSCs) and perovskite solar cells (PSCs). The limits in efficiency and the expected improvements of tandem structures are investigated as a function of total loss-in-potential (V(L)), incident photon to current efficiency (IPCE) and fill factor (FF) of individual components. It is shown that the optimal absorption onsets are significantly smaller than those derived for multi-junction devices. For example, for double-cell devices the onsets are at around 660 nm and 930 nm for DSSCs with iodide based electrolytes and at around 720 nm and 1100 nm for both DSSCs with cobalt based electrolytes and PSCs. Such configurations can increase the total sunlight conversion efficiency by about 35% in comparison to single-cell devices of the same VL, IPCE and FF. The relevance of such studies for tandem n-p DSSCs and for a proposed new configuration for PSCs is discussed. In particular, it is shown that maximum total losses of 1.7 V for DSSCs and 1.4 V for tandem PSCs are necessary to give any efficiency improvement with respect to the single bandgap device. This means, for example, a tandem n-p DSSC with TiO2 and NiO porous electrodes will hardly work better than the champion single DSSC. A source code of the program used for calculations is also provided.

Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices

NASA Astrophysics Data System (ADS)

Mulder, Watson

Heterojunction with Intrinsic Thin-layer (HIT) solar cells are an important photovoltaic technology, recently reaching record power conversion efficiencies. HIT cells hold advantages over the conventional crystalline Si solar cells, such as their fabrication at lower temperatures and their shorter fabrication time. It is important to understand the electronic characteristics and transport properties of HIT cells to continue to improve their efficiencies. The fundamental measurements of a HIT solar cell with an innovative n+/p/p+ structure are presented. We also report on a series of these HIT cells fabricated on wafers with different doping concentrations, observing the relationship between doping concentration and characteristics such as open-circuit voltage and diffusion length. Nanocrystalline Silicon-Germanium (nc-SiGe) is a useful material for photovoltaic devices and photodetectors. The material features good absorption extending to the infrared region even in thin layers. Its bandgap can be adjusted between that of Si (˜1.1 eV) and Ge (˜0.7 eV) by varying the alloy composition ratio during deposition. However, there has been very little previous work to measure and understand the defect density spectrum of nc-SiGe. Defects are responsible for controlling the recombination and thus the performance of solar cell devices. Capacitance-Frequency measurements at various temperatures are used in order to estimate the trap density profile within the bandgap of nc-SiGe.

Titanium dioxide nanotube membranes for solar energy conversion: effect of deep and shallow dopants.

PubMed

Ding, Yuchen; Nagpal, Prashant

2017-04-12

Nanostructured titanium dioxide (TiO 2 ) has been intensively investigated as a material of choice for solar energy conversion in photocatalytic, photoelectrochemical, photovoltaic, and other photosensitized devices for converting light into chemical feedstocks or electricity. Towards management of light absorption in TiO 2 , while the nanotubular structure improves light absorption and simultaneous charge transfer to mitigate problems due to the indirect bandgap of the semiconductor, typically dopants are used to improve light absorption of incident solar irradiation in the wide bandgap of TiO 2 . While these dopants can be critical to the success of these solar energy conversion devices, their effect on photophysical and photoelectrochemical properties and detailed photokinetics are relatively under-studied. Here, we show the effect of deep and shallow metal dopants on the kinetics of photogenerated charged carriers in TiO 2 and the resulting effect on photocatalytic and photoelectrochemical processes using these nanotube membranes. We performed a detailed optical, electronic, voltammetry and electrochemical impedance study to understand the effect of shallow and deep metal dopants (using undoped and niobium- and copper-doped TiO 2 nanotubes) on light absorption, charge transport and charge transfer processes. Using wireless photocatalytic methylene blue degradation and carbon dioxide reduction, and wired photoelectrochemical device measurements, we elucidate the effect of different dopants on solar-to-fuel conversion efficiency and simultaneously describe the photokinetics using a model, to help design better energy conversion devices.

21 CFR 895.101 - Prosthetic hair fibers.

Code of Federal Regulations, 2012 CFR

2012-04-01

... fibers are devices intended for implantation into the human scalp to simulate natural hair or conceal... modacrylic, polyacrylic, and polyester; and natural fibers, such as processed human hair. Excluded from the banned device are natural hair transplants, in which a person's hair and its surrounding tissue are...

21 CFR 895.101 - Prosthetic hair fibers.

Code of Federal Regulations, 2011 CFR

2011-04-01

... fibers are devices intended for implantation into the human scalp to simulate natural hair or conceal... modacrylic, polyacrylic, and polyester; and natural fibers, such as processed human hair. Excluded from the banned device are natural hair transplants, in which a person's hair and its surrounding tissue are...

21 CFR 895.101 - Prosthetic hair fibers.

Code of Federal Regulations, 2014 CFR

2014-04-01

... fibers are devices intended for implantation into the human scalp to simulate natural hair or conceal... modacrylic, polyacrylic, and polyester; and natural fibers, such as processed human hair. Excluded from the banned device are natural hair transplants, in which a person's hair and its surrounding tissue are...

21 CFR 895.101 - Prosthetic hair fibers.

Code of Federal Regulations, 2013 CFR

2013-04-01

... fibers are devices intended for implantation into the human scalp to simulate natural hair or conceal... modacrylic, polyacrylic, and polyester; and natural fibers, such as processed human hair. Excluded from the banned device are natural hair transplants, in which a person's hair and its surrounding tissue are...

Closed-loop motor control using high-speed fiber optics

NASA Technical Reports Server (NTRS)

Dawson, Reginald (Inventor); Rodriquiz, Dagobert (Inventor)

1991-01-01

A closed-loop control system for controlling the operation of one or more servo motors or other controllable devices is described. The system employs a fiber optics link immune to electromagnetic interference, for transmission of control signals from a controller or controllers at a remote station to the power electronics located in proximity to the motors or other devices at the local station. At the remote station the electrical control signals are time-multiplexed, converted to a formatted serial bit stream, and converted to light signals for transmission over a single fiber of the fiber optics link. At the local station, the received optical signals are reconstructed as electrical control signals for the controlled motors or other devices. At the local station, an encoder sensor linked to the driven device generates encoded feedback signals which provide information as to a condition of the controlled device. The encoded signals are placed in a formatted serial bit stream, multiplexed, and transmitted as optical signals over a second fiber of the fiber optic link which closes the control loop of the closed-loop motor controller. The encoded optical signals received at the remote station are demultiplexed, reconstructed and coupled to the controller(s) as electrical feedback signals.

Facile one-step synthesis of magnesium-doped ZnO nanoparticles: optical properties and their device applications

NASA Astrophysics Data System (ADS)

Oh, Ji-Young; Lim, Sang-Chul; Ahn, Seong Deok; Lee, Sang Seok; Cho, Kyoung-Ik; Bon Koo, Jae; Choi, Rino; Hasan, Musarrat

2013-07-01

In this study, magnesium-doped (Mg-doped) zinc oxide (ZnO) nanoparticles were successfully synthesized by a sonochemical process under mild conditions. The x-ray diffraction pattern indicated that the Mg-doped ZnO nanoparticles maintain a wurtzite structure without impurities. We observed a blue-shift of the bandgap of the Mg-doped ZnO nanoparticles as the Mg-doping ratio increased. We also fabricated thin-film transistor (TFT) devices with the doped-ZnO nanoparticles. Devices using Mg-doped ZnO nanoparticles as a channel layer showed insensibility to white-light irradiation compared with undoped ZnO TFTs.

Spectroscopic Chemical Analysis Methods and Apparatus

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Lane, Arthur L. (Inventor); Bhartia, Rohit (Inventor); Reid, Ray D. (Inventor)

2017-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted along with photoluminescence spectroscopy (i.e. fluorescence and/or phosphorescence spectroscopy) to provide high levels of sensitivity and specificity in the same instrument.

Spectroscopic Chemical Analysis Methods and Apparatus

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Lane, Arthur L. (Inventor); Reid, Ray D. (Inventor); Bhartia, Rohit (Inventor)

2018-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted along with photoluminescence spectroscopy (i.e. fluorescence and/or phosphorescence spectroscopy) to provide high levels of sensitivity and specificity in the same instrument.

A Solar Thermophotovoltaic Electric Generator for Remote Power Applications

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1998-01-01

We have successfully demonstrated that a solar thermophotovoltaic (TPV) system with a SiC graybody emitter and the monolithic interconnected module device technology can be realized. A custom-designed solar cavity was made to house the SiC emitter and the MIM strings for testing in a Stirling dish solar concentrator. Five 1x1-cm MIMs, with a bandgap of 0.74 eV,were mounted on a specially designed water-cooled heatsink and were electrically connected in series to form a string. Two such strings were fabricated and tested, as well as high-performance 2x2-cm MIMs with a bandgap of 0.74 eV. Very high output power density values between 0.82 and 0.90 W/sq cm were observed for an average emitter temperature of 1501 K.

Hot carrier response in gapped bilayer graphene

NASA Astrophysics Data System (ADS)

Aivazian, Grant; Ross, Jason; Watanabe, K.; Taniguchi, T.; Kitamura, K.; Cobden, David; Xu, Xiaodong

2013-03-01

Recently bilayer graphene has been shown to develop a bandgap upon breaking of inversion symmetry by a perpendicular electric field that is in situtunable between zero and several hundred meV (corresponding to wavelengths in the mid-IR). Such unique tunability offers bilayer graphene a niche in mid-IR optoelectronic devices where a lack of high performance photodetectors exists. In this work we have performed spatially and temporally resolved photocurrent measurements in a dual-gated bilayer graphene FET under continuous-wave and pulsed laser excitation. We find that photocurrent generation in native bilayer graphene is dominated by hot carriers, as is the case in monolayer graphene, but it behaves very differently from monolayer graphene once a bandgap has been opened. Work supported by the NSF Early Career Grant and DARPA N66001-11-1-4124.

Analytical model of surface potential profiles and transfer characteristics for hetero stacked tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Hui Fang; Sun, Wen; Han, Xin Feng

2018-06-01

An analytical model of surface potential profiles and transfer characteristics for hetero stacked tunnel field-effect transistors (HS-TFETs) is presented for the first time, where hetero stacked materials are composed of two different bandgaps. The bandgap of the underlying layer is smaller than that of the upper layer. Under different device parameters (upper layer thickness, underlying layer thickness, and hetero stacked materials) and temperature, the validity of the model is demonstrated by the agreement of its results with the simulation results. Moreover, the results show that the HS-TFETs can obtain predominant performance with relatively slow changes of subthreshold swing (SS) over a wide drain current range, steep average subthreshold swing, high on-state current, and large on–off state current ratio.

Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

PubMed

Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

2017-02-01

Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All-fiber Devices Based on Photonic Crystal Fibers with Integrated Electrodes

NASA Astrophysics Data System (ADS)

Chesini, Giancarlo; Cordeiro, Cristiano M. B.; de Matos, Christiano J. S.; Fokine, Michael; Carvalho, Isabel C. S.; Knighf, Jonathan C.

2008-10-01

A special kind of microstructured optical fiber was proposed and manufactured where, as well as the holey region (solid core and silica-air cladding), the fiber has also two large holes for electrode insertion. Bi-Sn and Au-Sn alloys were selectively inserted in those holes forming two parallel, continuous and homogeneous internal electrodes. We demonstrated the production of a monolithic device and its use to externally control some of the guidance properties (e.g. polarization) of the fiber.

Micro-device for coupling, multiplexing and demultiplexing using elliptical-core two-mode fiber

NASA Technical Reports Server (NTRS)

Wang, A.; Murphy, K. A.; Wang, G. Z.; Vengsarkar, A. M.; Claus, R. O.

1990-01-01

We propose and demonstrate experimentally a fiber optic micro-device that is capable of tunably splitting, multiplexing, and demultiplexing optical signals using elliptical-core two-mode optical fiber. A crosstalk of 15 dB with an insertion loss of 1.2 dB was obtained.

Progress to a Gallium-Arsenide Deep-Center Laser

PubMed Central

Pan, Janet L.

2009-01-01

Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, photoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm) by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This small injection for laser action was explained by fast depopulation of the lower state of the optical transition (fast capture of free holes onto deep-centers), which maintains the population inversion. The evidence for laser action included: superlinear L-I curve, quasi-Fermi level separations satisfying Bernard-Duraffourg’s criterion, optical gains larger than known significant losses, clamping of the optical-emission from lossy modes unable to reach laser action, pinning of the population distribution during laser action.

Fiber optic-based biosensor

NASA Technical Reports Server (NTRS)

Ligler, Frances S.

1991-01-01

The NRL fiber optic biosensor is a device which measures the formation of a fluorescent complex at the surface of an optical fiber. Antibodies and DNA binding proteins provide the mechanism for recognizing an analyze and immobilizing a fluorescent complex on the fiber surface. The fiber optic biosensor is fast, sensitive, and permits analysis of hazardous materials remote from the instrumentation. The fiber optic biosensor is described in terms of the device configuration, chemistry for protein immobilization, and assay development. A lab version is being used for assay development and performance characterization while a portable device is under development. Antibodies coated on the fiber are stable for up to two years of storage prior to use. The fiber optic biosensor was used to measure concentration of toxins in the parts per billion (ng/ml) range in under a minute. Immunoassays for small molecules and whole bacteria are under development. Assays using DNA probes as the detection element can also be used with the fiber optic sensor, which is currently being developed to detect biological warfare agents, explosives, pathogens, and toxic materials which pollute the environment.

Hierarchical structural health monitoring system combining a fiber optic spinal cord network and distributed nerve cell devices

NASA Astrophysics Data System (ADS)

Minakuchi, Shu; Tsukamoto, Haruka; Takeda, Nobuo

2009-03-01

This study proposes novel hierarchical sensing concept for detecting damages in composite structures. In the hierarchical system, numerous three-dimensionally structured sensor devices are distributed throughout the whole structural area and connected with the optical fiber network through transducing mechanisms. The distributed "sensory nerve cell" devices detect the damage, and the fiber optic "spinal cord" network gathers damage signals and transmits the information to a measuring instrument. This study began by discussing the basic concept of the hierarchical sensing system thorough comparison with existing fiber optic based systems and nerve systems in the animal kingdom. Then, in order to validate the proposed sensing concept, impact damage detection system for the composite structure was proposed. The sensor devices were developed based on Comparative Vacuum Monitoring (CVM) system and the Brillouin based distributed strain sensing was utilized to gather the damage signals from the distributed devices. Finally a verification test was conducted using prototype devices. Occurrence of barely visible impact damage was successfully detected and it was clearly indicated that the hierarchical system has better repairability, higher robustness, and wider monitorable area compared to existing systems utilizing embedded optical fiber sensors.

Investigation of self-phase modulation based optical regeneration in single mode As2Se3 chalcogenide glass fiber.

PubMed

Fu, L; Rochette, M; Ta'eed, V; Moss, D; Eggleton, B

2005-09-19

We investigate the feasibility of all-optical regeneration based on self-phase modulation in single mode As2Se3 chalcogenide fiber. By combining the chalcogenide fiber with a bandpass filter, we achieve a near step-like power transfer function with no pulse distortion. The device is shown to operate with 5.8 ps duration pulses, thus demonstrating the feasibility of this device operating with high bit-rate data signals. These results are achieved with pulse peak powers <10 W in a fully passive device, including only 2.8 m of chalcogenide fiber. We obtain an excellent agreement between theory and experiment and show that both the high nonlinearity of the chalcogenide glass along with its high normal dispersion near 1550 nm enables a significant device length reduction in comparison with silica-based devices, without compromise on the performance. We find that even for only a few meters of fiber, the large normal dispersion of the chalcogenide glass inhibits spectral oscillations that would appear with self-phase modulation alone. We measure the two photon absorption attenuation coefficient and find that it advantageously affects the device transfer function.

The Challenge of Producing Fiber-Based Organic Electronic Devices

PubMed Central

Könyves-Toth, Tobias; Gassmann, Andrea; von Seggern, Heinz

2014-01-01

The implementation of organic electronic devices on fibers is a challenging task, not yet investigated in detail. As was shown earlier, a direct transition from a flat device structure to a fiber substrate is in principle possible. However, a more detailed investigation of the process reveals additional complexities than just the transition in geometry. It will be shown, that the layer formation of evaporated materials behaves differently due to the multi-angled incidence on the fibers surface. In order to achieve homogenous layers the evaporation process has to be adapted. Additionally, the fiber geometry itself facilitates damaging of its surface due to mechanical impact and leads to a high surface roughness, thereby often hindering commercial fibers to be used as substrates. In this article, a treatment of commercial polymer-coated glass fibers will be demonstrated that allows for the fabrication of rather flexible organic light-emitting diodes (OLEDs) with cylindrical emission characteristics. Since OLEDs rely the most on a smooth substrate, fibers undergoing the proposed treatment are applicable for other organic electronic devices such as transistors and solar cells. Finally, the technique also supports the future fabrication of organic electronics not only in smart textiles and woven electronics but also in bent surfaces, which opens a wide range of applications. PMID:28788128

Actively tunable transverse waves in soft membrane-type acoustic metamaterials

NASA Astrophysics Data System (ADS)

Zhou, Weijian; Wu, Bin; Muhammad, Du, Qiujiao; Huang, Guoliang; Lü, Chaofeng; Chen, Weiqiu

2018-04-01

Membrane-type metamaterials have shown a fantastic capacity for manipulating acoustic waves in the low frequency range. They have the advantages of simple geometry, light weight, and active tunability. In general, these membrane-type metamaterials contain a rigid frame support, leading to a fixed configuration. However, in some instances, flexible and reconfigurable devices may be desirable. A soft membrane-type acoustic metamaterial that is highly flexible and controllable is designed here. Different from the previously designed membrane-type metamaterials, the stiff supporting frame is removed and the stiff mass at the center of each unit cell is replaced by the soft mass, realized by bonding fine metallic particles in the central region. In contrast to the previous studies, the propagation of elastic transverse waves in such a soft metamaterial is investigated by employing the plane wave expansion method. Both the Bragg scattering bandgaps and locally resonant bandgaps are found to coexist in the soft metamaterial. The influences of structural parameters and finite biaxial pre-stretch on the dynamic behavior of this soft metamaterial are carefully examined. It is shown that whether or not the wave propagation characteristics are sensitive to the finite deformation does not depend on the property and pre-stretch of the membrane. In addition, a broadband complete bandgap and a pseudo-gap formed by the combination of two extremely adjacent directional bandgaps are observed in the low-frequency range, and both can be controlled by the finite pre-stretch.

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

PubMed

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.

PubMed

Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah A; Shakfa, Mohammad Khaled; Ng, Tien Khee; Ooi, Boon S

2018-06-13

p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity, while Mott-Schottky experiments measured a hole concentration of 1.3 × 1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and an optimized p-type AlGaN contact layer for UV-transparency. The ∼335 nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate the electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

Catheter guided by optical coherence domain reflectometry

DOEpatents

Everett, Matthew; Colston, Billy W.; Da Silva, Luiz B.; Matthews, Dennis

2002-01-01

A guidance and viewing system based on multiplexed optical coherence domain reflectometry is incorporated into a catheter, endoscope, or other medical device to measure the location, thickness, and structure of the arterial walls or other intra-cavity regions at discrete points on the medical device during minimally invasive medical procedures. The information will be used both to guide the device through the body and to evaluate the tissue through which the device is being passed. Multiple optical fibers are situated along the circumference of the device. Light from the distal end of each fiber is directed onto the interior cavity walls via small diameter optics (such as gradient index lenses and mirrored corner cubes). Both forward viewing and side viewing fibers can be included. The light reflected or scattered from the cavity walls is then collected by the fibers and multiplexed at the proximal end to the sample arm of an optical low coherence reflectometer. The system may also be implemented in a nonmedical inspection device.

Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

DOEpatents

Mascarenhas, Angelo

2015-07-07

Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1999-08-24

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1997-07-08

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery

NASA Astrophysics Data System (ADS)

E Munson, C., IV; Gaimard, Q.; Merghem, K.; Sundaram, S.; Rogers, D. J.; de Sanoit, J.; Voss, P. L.; Ramdane, A.; Salvestrini, J. P.; Ougazzaden, A.

2018-01-01

GaN is a durable, radiation hard and wide-bandgap semiconductor material, making it ideal for usage with betavoltaic batteries. This paper describes the design, fabrication and experimental testing of 1 cm2 GaN-based betavoltaic batteries (that achieve an output power of 2.23 nW) along with a full model that accurately simulates the device performance which is the highest to date (to the best of our knowledge) for GaN-based devices with a 63Ni source.

Fiber-bragg grating-loop ringdown method and apparatus

DOEpatents

Wang, Chuji [Starkville, MS

2008-01-29

A device comprising a fiber grating loop ringdown (FGLRD) system of analysis is disclosed. A fiber Bragg grating (FBG) or Long-Period grating (LPG) written in a section of single mode fused silica fiber is incorporated into a fiber loop. By utilizing the wing areas of the gratings' bandwidth as a wavelength dependent attenuator of the light transmission, a fiber grating loop ringdown concept is formed. One aspect of the present invention is temperature sensing, which has been demonstrated using the disclosed device. Temperature measurements in the areas of accuracy, stability, high temperature, and dynamic range are also described.

Multi-material optoelectronic fiber devices

NASA Astrophysics Data System (ADS)

Sorin, F.; Yan, Wei; Volpi, Marco; Page, Alexis G.; Nguyen Dang, Tung; Qu, Y.

2017-05-01

The recent ability to integrate materials with different optical and optoelectronic properties in prescribed architectures within flexible fibers is enabling novel opportunities for advanced optical probes, functional surfaces and smart textiles. In particular, the thermal drawing process has known a series of breakthroughs in recent years that have expanded the range of materials and architectures that can be engineered within uniform fibers. Of particular interest in this presentation will be optoelectronic fibers that integrate semiconductors electrically addressed by conducting materials. These long, thin and flexible fibers can intercept optical radiation, localize and inform on a beam direction, detect its wavelength and even harness its energy. They hence constitute ideal candidates for applications such as remote and distributed sensing, large-area optical-detection arrays, energy harvesting and storage, innovative health care solutions, and functional fabrics. To improve performance and device complexity, tremendous progresses have been made in terms of the integrated semiconductor architectures, evolving from large fiber solid-core, to sub-hundred nanometer thin-films, nano-filaments and even nanospheres. To bridge the gap between the optoelectronic fiber concept and practical applications however, we still need to improve device performance and integration. In this presentation we will describe the materials and processing approaches to realize optoelectronic fibers, as well as give a few examples of demonstrated systems for imaging as well as light and chemical sensing. We will then discuss paths towards practical applications focusing on two main points: fiber connectivity, and improving the semiconductor microstructure by developing scalable approaches to make fiber-integrated single-crystal nanowire based devices.

An in-fiber integrated optofluidic device based on an optical fiber with an inner core.

PubMed

Yang, Xinghua; Yuan, Tingting; Teng, Pingping; Kong, Depeng; Liu, Chunlan; Li, Entao; Zhao, Enming; Tong, Chengguo; Yuan, Libo

2014-06-21

A new kind of optofluidic in-fiber integrated device based on a specially designed hollow optical fiber with an inner core is designed. The inlets and outlets are built by etching the surface of the optical fiber without damaging the inner core. A reaction region between the end of the fiber and a solid point obtained after melting is constructed. By injecting samples into the fiber, the liquids can form steady microflows and react in the region. Simultaneously, the emission from the chemiluminescence reaction can be detected from the remote end of the optical fiber through evanescent field coupling. The concentration of ascorbic acid (AA or vitamin C, Vc) is determined by the emission intensity of the reaction of Vc, H2O2, luminol, and K3Fe(CN)6 in the optical fiber. A linear sensing range of 0.1-3.0 mmol L(-1) for Vc is obtained. The emission intensity can be determined within 2 s at a total flow rate of 150 μL min(-1). Significantly, this work presents information for the in-fiber integrated optofluidic devices without spatial optical coupling.

Computer analysis of the negative differential resistance switching phenomenon of double-injection devices

NASA Technical Reports Server (NTRS)

Shieh, Tsay-Jiu

1989-01-01

By directly solving the semiconductor differential equations for the double-injection (DI) devices involving two interacting deep levels, the authors studied the negative differential resistance switching characteristic and its relationship with the device dimension, doping level, and dependence on the deep impurity profile. Computer simulation showed that although one can increase the threshold voltage by increasing the device length, the excessive holding voltage that would follow would put this device in a very limited application such as pulse power source. The excessive leakage current in the low conductance state also jeopardizes the attempt to use the device for any practical purpose. Unless there are new materials and deep impurities found that have a great differential hole and electron capture cross sections and a reasonable energy bandgap for low intrinsic carrier concentration, no big improvement in the fate of DI devices is expected in the near future.

Elastic Fiber Supercapacitors for Wearable Energy Storage.

PubMed

Qin, Si; Seyedin, Shayan; Zhang, Jizhen; Wang, Zhiyu; Yang, Fangli; Liu, Yuqing; Chen, Jun; Razal, Joselito M

2018-05-17

The development of wearable devices such as smart watches, intelligent garments, and wearable health-monitoring devices calls for suitable energy storage devices which have matching mechanical properties and can provide sufficient power for a reasonable duration. Stretchable fiber-based supercapacitors are emerging as a promising candidates for this purpose because they are lightweight, flexible, have high energy and power density, and the potential for easy integration into traditional textile processes. An important characteristic that is oftentimes ignored is stretchability-fiber supercapacitors should be able to accommodate large elongation during use, endure a range of bending motions, and then revert to its original form without compromising electrical and electrochemical performance. This article summarizes the current research progress on stretchable fiber-based supercapacitors and discusses the existing challenges on material preparation and fiber-based device fabrication. This article aims to help researchers in the field to better understand the challenges related to material design and fabrication approaches of fiber-based supercapacitors, and to provide insights and guidelines toward their wearability. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon nanoparticle-functionalized fiberglass pads for sampling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mantey, Kevin; Nayfeh, Munir H.; Al-Hreish, Bahjat

2011-03-15

We used wet treatment to immobilize luminescent silicon nanoparticles on industrial glass fibers to impart optical and chemical functions to the fiber. Carpets or pads consisting of thousands of fibers are processed in parallel, enhancing the sensitivity of detection and the sampled volume. Treated pads exhibit strong luminescence, characteristic of the luminescence of the particles; showing no shift, broadening, or reduction of quantum efficiency. We demonstrate that drawing material by the pad due to physical adsorption can be reversed. We also demonstrate that allylamine can be covalently attached by photoinduced irradiation reactions, which results in imprinting the amine emission spectrum,more » providing spectral recognition. The imprint accompanied with a blue-shifting of the luminescence spectrum of the probe, allowing examination of the effect of termination on the nanoparticle structure. The shift is found to be consistent with an increase in the bandgap of the Si nanoparticle and is consistent with Quantum Monte Carlo calculations. In addition to sampling, the nano probe pad has the potential to enable a variety of biomedical applications through subsequent attachment.« less

Quantum Dots Investigated for Solar Cells

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Castro, Stephanie L.; Raffaelle, Ryne P.; Hepp, Aloysius F.

2001-01-01

The NASA Glenn Research Center has been investigating the synthesis of quantum dots of CdSe and CuInS2 for use in intermediate-bandgap solar cells. Using quantum dots in a solar cell to create an intermediate band will allow the harvesting of a much larger portion of the available solar spectrum. Theoretical studies predict a potential efficiency of 63.2 percent, which is approximately a factor of 2 better than any state-of-the-art devices available today. This technology is also applicable to thin-film devices--where it offers a potential four-fold increase in power-to-weight ratio over the state of the art. Intermediate-bandgap solar cells require that quantum dots be sandwiched in an intrinsic region between the photovoltaic solar cell's ordinary p- and n-type regions (see the preceding figure). The quantum dots form the intermediate band of discrete states that allow sub-bandgap energies to be absorbed. However, when the current is extracted, it is limited by the bandgap, not the individual photon energies. The energy states of the quantum dot can be controlled by controlling the size of the dot. Ironically, the ground-state energy levels are inversely proportional to the size of the quantum dots. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Ba Wendi et al., in the early 1990's. The most studied quantum dots prepared by this method have been of CdSe. To produce these dots, researchers inject a syringe of the desired organometallic precursors into heated triocytlphosphine oxide (TOPO) that has been vigorously stirred under an inert atmosphere (see the following figure). The solution immediately begins to change from colorless to yellow, then orange and red/brown, as the quantum dots increase in size. When the desired size is reached, the heat is removed from the flask. Quantum dots of different sizes can be identified by placing them under a "black light" and observing the various color differences in their fluorescence (see the photograph).

The new oxide paradigm for solid state ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Rogers, D. J.; Bove, P.; Arrateig, X.; Sandana, V. E.; Teherani, F. H.; Razeghi, M.; McClintock, R.; Frisch, E.; Harel, S.

2018-03-01

The bandgap of wurzite ZnO layers grown on 2 inch diameter c-Al2O3 substrates by pulsed laser deposition was engineered from 3.7 to 4.8 eV by alloying with Mg. Above this Mg content the layers transformed from single phase hcp to mixed hcp/fcc phase before becoming single phase fcc above a bandgap of about 5.5 eV. Metal-Semiconductor-Metal (MSM) photodetectors based on gold Inter-Digitated-Transducer structures were fabricated from the single phase hcp layers by single step negative photolithography and then packaged in TO5 cans. The devices gave over 6 orders of magnitude of separation between dark and light signal with solar rejection ratios (I270 : I350) of over 3 × 105 and dark signals of 300 pA (at a bias of -5V). Spectral responsivities were engineered to fit the "Deutscher Verein des Gas- und Wasserfaches" industry standard form and gave over two decade higher responsivities (14 A/W, peaked at 270 nm) than commercial SiC based devices. Homogeneous Ga2O3 layers were also grown on 2 inch diameter c-Al2O3 substrates by PLD. Optical transmission spectra were coherent with a bandgap that increased from 4.9 to 5.4 eV when film thickness was decreased from 825 to 145 nm. X-ray diffraction revealed that the films were of the β-Ga2O3 (monoclinic) polytype with strong (-201) orientation. β-Ga2O3 MSM photodetectors gave over 4 orders of magnitude of separation between dark and light signal (at -5V bias) with dark currents of 250 pA and spectral responsivities of up to 40 A/W (at -0.75V bias). It was found that the spectral responsivity peak position could be decreased from 250 to 230 nm by reducing film thickness from 825 to 145 nm. This shift in peak responsivity wavelength with film thickness (a) was coherent with the apparent bandgap shift that was observed in transmission spectroscopy for the same layers and (b) conveniently provides a coverage of the spectral region in which MgZnO layers show fcc/hcp phase mixing.

Pathway to 50% efficient inverted metamorphic concentrator solar cells

NASA Astrophysics Data System (ADS)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; Perl, Emmett E.; Horowitz, Kelsey A. W.; Friedman, Daniel J.

2017-09-01

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

Oriented thin films of mixture of a low-bandgap polymer and a fullerene derivative prepared by friction-transfer method

NASA Astrophysics Data System (ADS)

Tanigaki, Nobutaka; Mizokuro, Toshiko; Miyadera, Tetsuhiko; Shibata, Yousei; Koganezawa, Tomoyuki

2018-02-01

We have been studying oriented thin films of polymers fabricated by the friction-transfer method, which allows the alignment of a variety of conjugated polymers into highly oriented films. In this study, we prepared oriented blend films of a mixture of a low-bandgap polymer, poly{4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b‧]dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl} (PTB7), and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), which is a promising combination for application in organic solar cells. We obtained oriented blend films of PTB7 and PC71BM by the friction-transfer method from a solid block. Polarized UV-visible spectra show that the PTB7 chains were aligned parallel to the friction direction in the blend films. Grazing-incidence X-ray diffraction (GIXD) studies with synchrotron radiation suggested that the preferred orientation of PTB7 crystallites was face-on in the blend films. The GIXD results also showed the high uniaxial orientation of PTB7 chains in blend films. Photovoltaic devices were fabricated using the friction-transferred blend films of the PTB7 and PC71BM. These bulk heterojunction devices showed better performance than planar heterojunction devices fabricated using pure friction-transferred PTB7 films.

Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F; Steiner, Myles A; Jain, Nikhil

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAsmore » to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.« less

Wafer-scale synthesis of monolayer and few-layer MoS2 via thermal vapor sulfurization

NASA Astrophysics Data System (ADS)

Robertson, John; Liu, Xue; Yue, Chunlei; Escarra, Matthew; Wei, Jiang

2017-12-01

Monolayer molybdenum disulfide (MoS2) is an atomically thin, direct bandgap semiconductor crystal potentially capable of miniaturizing optoelectronic devices to an atomic scale. However, the development of 2D MoS2-based optoelectronic devices depends upon the existence of a high optical quality and large-area monolayer MoS2 synthesis technique. To address this need, we present a thermal vapor sulfurization (TVS) technique that uses powder MoS2 as a sulfur vapor source. The technique reduces and stabilizes the flow of sulfur vapor, enabling monolayer wafer-scale MoS2 growth. MoS2 thickness is also controlled with great precision; we demonstrate the ability to synthesize MoS2 sheets between 1 and 4 layers thick, while also showing the ability to create films with average thickness intermediate between integer layer numbers. The films exhibit wafer-scale coverage and uniformity, with electrical quality varying depending on the final thickness of the grown MoS2. The direct bandgap of grown monolayer MoS2 is analyzed using internal and external photoluminescence quantum efficiency. The photoluminescence quantum efficiency is shown to be competitive with untreated exfoliated MoS2 monolayer crystals. The ability to consistently grow wafer-scale monolayer MoS2 with high optical quality makes this technique a valuable tool for the development of 2D optoelectronic devices such as photovoltaics, detectors, and light emitters.

The applications of carbon nanomaterials in fiber-shaped energy storage devices

NASA Astrophysics Data System (ADS)

Wu, Jingxia; Hong, Yang; Wang, Bingjie

2018-01-01

As a promising candidate for future demand, fiber-shaped electrochemical energy storage devices, such as supercapacitors and lithium-ion batteries have obtained considerable attention from academy to industry. Carbon nanomaterials, such as carbon nanotube and graphene, have been widely investigated as electrode materials due to their merits of light weight, flexibility and high capacitance. In this review, recent progress of carbon nanomaterials in flexible fiber-shaped energy storage devices has been summarized in accordance with the development of fibrous electrodes, including the diversified electrode preparation, functional and intelligent device structure, and large-scale production of fibrous electrodes or devices. Project supported by the National Natural Science Foundation of China (Nos. 21634003, 21604012).

Laser multiplexing system

DOEpatents

Johnson, Steve A.; English, Jr., Ronald Edward; White, Ronald K.

2001-01-01

A plurality of copper lasers, as radiant power sources, emits a beam of power carrying radiation. A plurality of fiber injection assemblies receives power from the plurality of copper lasers and injects such power into a plurality of fibers for individually transmitting the received power to a plurality of power-receiving devices. The power-transmitting fibers of the system are so arranged that power is delivered therethrough to each of the power-receiving devices such that, even if a few of the radiant power sources and/or fibers fail, the power supply to any of the power receiving devices will not completely drop to zero but will drop by the same proportionate amount.

Freedom from band-gap slavery: from diode lasers to quantum cascade lasers

NASA Astrophysics Data System (ADS)

Capasso, Federico

2010-02-01

Semiconductor heterostructure lasers, for which Alferov and Kromer received part of the Nobel Prize in Physics in 2000, are the workhorse of technologies such as optical communications, optical recording, supermarket scanners, laser printers and fax machines. They exhibit high performance in the visible and near infrared and rely for their operation on electrons and holes emitting photons across the semiconductor bandgap. This mechanism turns into a curse at longer wavelengths (mid-infrared) because as the bandgap, shrinks laser operation becomes much more sensitive to temperature, material defects and processing. Quantum Cascade Laser (QCL), invented in 1994, rely on a radically different process for light emission. QCLs are unipolar devices in which electrons undergo transitions between quantum well energy levels and are recycled through many stages emitting a cascade of photons. Thus by suitable tailoring of the layers' thickness, using the same heterostructure material, they can lase across the molecular fingerprint region from 3 to 25 microns and beyond into the far-infrared and submillimiter wave spectrum. High power cw room temperature QCLs and QCLs with large continuous single mode tuning range have found many applications (infrared countermeasures, spectroscopy, trace gas analysis and atmospheric chemistry) and are commercially available. )

Environmental Screening Effects in 2D Materials: Renormalization of the Bandgap, Electronic Structure, and Optical Spectra of Few-Layer Black Phosphorus.

PubMed

Qiu, Diana Y; da Jornada, Felipe H; Louie, Steven G

2017-08-09

Few-layer black phosphorus has recently emerged as a promising 2D semiconductor, notable for its widely tunable bandgap, highly anisotropic properties, and theoretically predicted large exciton binding energies. To avoid degradation, it has become common practice to encapsulate black phosphorus devices. It is generally assumed that this encapsulation does not qualitatively affect their optical properties. Here, we show that the contrary is true. We have performed ab initio GW and GW plus Bethe-Salpeter equation (GW-BSE) calculations to determine the quasiparticle (QP) band structure and optical spectrum of one-layer (1L) through four-layer (4L) black phosphorus, with and without encapsulation between hexagonal boron nitride and sapphire. We show that black phosphorus is exceptionally sensitive to environmental screening. Encapsulation reduces the exciton binding energy in 1L by as much as 70% and completely eliminates the presence of a bound exciton in the 4L structure. The reduction in the exciton binding energies is offset by a similarly large renormalization of the QP bandgap so that the optical gap remains nearly unchanged, but the nature of the excited states and the qualitative features of the absorption spectrum change dramatically.

Medium-Bandgap Small-Molecule Donors Compatible with Both Fullerene and Nonfullerene Acceptors.

PubMed

Huo, Yong; Yan, Cenqi; Kan, Bin; Liu, Xiao-Fei; Chen, Li-Chuan; Hu, Chen-Xia; Lau, Tsz-Ki; Lu, Xinhui; Sun, Chun-Lin; Shao, Xiangfeng; Chen, Yongsheng; Zhan, Xiaowei; Zhang, Hao-Li

2018-03-21

Much effort has been devoted to the development of new donor materials for small-molecule organic solar cells due to their inherent advantages of well-defined molecular weight, easy purification, and good reproducibility in photovoltaic performance. Herein, we report two small-molecule donors that are compatible with both fullerene and nonfullerene acceptors. Both molecules consist of an (E)-1,2-di(thiophen-2-yl)ethane-substituted (TVT-substituted) benzo[1,2-b:4,5-b']dithiophene (BDT) as the central unit, and two rhodanine units as the terminal electron-withdrawing groups. The central units are modified with either alkyl side chains (DRBDT-TVT) or alkylthio side chains (DRBDT-STVT). Both molecules exhibit a medium bandgap with complementary absorption and proper energy level offset with typical acceptors like PC 71 BM and IDIC. The optimized devices show a decent power conversion efficiency (PCE) of 6.87% for small-molecule organic solar cells and 6.63% for nonfullerene all small-molecule organic solar cells. Our results reveal that rationally designed medium-bandgap small-molecule donors can be applied in high-performance small-molecule organic solar cells with different types of acceptors.

Study on the photoresponse of amorphous In-Ga-Zn-O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation.

PubMed

Jang, Jun Tae; Park, Jozeph; Ahn, Byung Du; Kim, Dong Myong; Choi, Sung-Jin; Kim, Hyun-Suk; Kim, Dae Hwan

2015-07-22

Persistent photoconduction (PPC) is a phenomenon that limits the application of oxide semiconductor thin-film transistors (TFTs) in optical sensor-embedded displays. In the present work, a study on zinc oxynitride (ZnON) semiconductor TFTs based on the combination of experimental results and device simulation is presented. Devices incorporating ZnON semiconductors exhibit negligible PPC effects compared with amorphous In-Ga-Zn-O (a-IGZO) TFTs, and the difference between the two types of materials are examined by monochromatic photonic C-V spectroscopy (MPCVS). The latter method allows the estimation of the density of subgap states in the semiconductor, which may account for the different behavior of ZnON and IGZO materials with respect to illumination and the associated PPC. In the case of a-IGZO TFTs, the oxygen flow rate during the sputter deposition of a-IGZO is found to influence the amount of PPC. Small oxygen flow rates result in pronounced PPC, and large densities of valence band tail (VBT) states are observed in the corresponding devices. This implies a dependence of PPC on the amount of oxygen vacancies (VO). On the other hand, ZnON has a smaller bandgap than a-IGZO and contains a smaller density of VBT states over the entire range of its bandgap energy. Here, the concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor. The analytical methodology presented in this report accounts well for the reduction of PPC in ZnON TFTs, and provides a quantitative tool for the systematic development of phototransistors for optical sensor-embedded interactive displays.

Integrating theory, synthesis, spectroscopy and device efficiency to design and characterize donor materials for organic photovoltaics: a case study including 12 donors

DOE PAGES

Oosterhout, S. D.; Kopidakis, N.; Owczarczyk, Z. R.; ...

2015-04-07

There have been remarkable improvements in the power conversion efficiency of solution-processable Organic Photovoltaics (OPV) have largely been driven by the development of novel narrow bandgap copolymer donors comprising an electron-donating (D) and an electron-withdrawing (A) group within the repeat unit. The large pool of potential D and A units and the laborious processes of chemical synthesis and device optimization, has made progress on new high efficiency materials slow with a few new efficient copolymers reported every year despite the large number of groups pursuing these materials. In our paper we present an integrated approach toward new narrow bandgap copolymersmore » that uses theory to guide the selection of materials to be synthesized based on their predicted energy levels, and time-resolved microwave conductivity (TRMC) to select the best-performing copolymer–fullerene bulk heterojunction to be incorporated into complete OPV devices. We validate our methodology by using a diverse group of 12 copolymers, including new and literature materials, to demonstrate good correlation between (a) theoretically determined energy levels of polymers and experimentally determined ionization energies and electron affinities and (b) photoconductance, measured by TRMC, and OPV device performance. The materials used here also allow us to explore whether further copolymer design rules need to be incorporated into our methodology for materials selection. For example, we explore the effect of the enthalpy change (ΔH) during exciton dissociation on the efficiency of free charge carrier generation and device efficiency and find that ΔH of -0.4 eV is sufficient for efficient charge generation.« less

Thermo-optic characteristic of DNA thin solid film and its application as a biocompatible optical fiber temperature sensor.

PubMed

Hong, Seongjin; Jung, Woohyun; Nazari, Tavakol; Song, Sanggwon; Kim, Taeoh; Quan, Chai; Oh, Kyunghwan

2017-05-15

We report unique thermo-optical characteristics of DNA-Cetyl tri-methyl ammonium (DNA-CTMA) thin solid film with a large negative thermo-optical coefficient of -3.4×10^-4/°C in the temperature range from 20°C to 70°C without any observable thermal hysteresis. By combining this thermo-optic DNA film and fiber optic multimode interference (MMI) device, we experimentally demonstrated a highly sensitive compact temperature sensor with a large spectral shift of 0.15 nm/°C. The fiber optic MMI device was a concatenated structure with single-mode fiber (SMF)-coreless silica fiber (CSF)-single mode fiber (SMF) and the DNA-CTMA film was deposited on the CSF. The spectral shifts of the device in experiments were compared with the beam propagation method, which showed a good agreement.

Error free all optical wavelength conversion in highly nonlinear As-Se chalcogenide glass fiber.

PubMed

Ta'eed, Vahid G; Fu, Libin; Pelusi, Mark; Rochette, Martin; Littler, Ian C; Moss, David J; Eggleton, Benjamin J

2006-10-30

We present the first demonstration of all optical wavelength conversion in chalcogenide glass fiber including system penalty measurements at 10 Gb/s. Our device is based on As2Se3 chalcogenide glass fiber which has the highest Kerr nonlinearity (n(2)) of any fiber to date for which either advanced all optical signal processing functions or system penalty measurements have been demonstrated. We achieve wavelength conversion via cross phase modulation over a 10 nm wavelength range near 1550 nm with 7 ps pulses at 2.1 W peak pump power in 1 meter of fiber, achieving only 1.4 dB excess system penalty. Analysis and comparison of the fundamental fiber parameters, including nonlinear coefficient, two-photon absorption coefficient and dispersion parameter with other nonlinear glasses shows that As(2)Se(3) based devices show considerable promise for radically integrated nonlinear signal processing devices.

21 CFR 880.5300 - Medical absorbent fiber.

Code of Federal Regulations, 2012 CFR

2012-04-01

...'s body surface. Absorbent fibers intended solely for cosmetic purposes are not included in this generic device category. (b) Classification. Class I (general controls). The device is exempt from the...

21 CFR 880.5300 - Medical absorbent fiber.

Code of Federal Regulations, 2013 CFR

2013-04-01

...'s body surface. Absorbent fibers intended solely for cosmetic purposes are not included in this generic device category. (b) Classification. Class I (general controls). The device is exempt from the...

21 CFR 880.5300 - Medical absorbent fiber.

Code of Federal Regulations, 2014 CFR

2014-04-01

...'s body surface. Absorbent fibers intended solely for cosmetic purposes are not included in this generic device category. (b) Classification. Class I (general controls). The device is exempt from the...

Spectroscopic and fiber optic ethanol sensing properties Gd doped ZnO nanoparticles.

PubMed

Noel, J L; Udayabhaskar, R; Renganathan, B; Muthu Mariappan, S; Sastikumar, D; Karthikeyan, B

2014-11-11

We report the structural, optical and gas sensing properties of prepared pure and Gd doped ZnO nanoparticles through solgel method at moderate temperature. Structural studies are carried out by X-ray diffraction method confirms hexagonal wurtzite structure and doping induced changes in lattice parameters is observed. Optical absorption spectral studies shows red shift in the absorption peak corresponds to band-gap from 3.42 eV to 3.05 eV and broad absorption in the visible range after Gd doping is observed. Scanning electron microscopic studies shows increase in particle size where the particle diameters increase from few nm to micrometers after Gd doping. The clad modified ethanol fiber-optic sensor studies for ethanol sensing exhibits best sensitivity for the 3% Gd doped ZnO nanoparticles and the sensitivity get lowered incase of higher percentage of Gd doped ZnO sample. Copyright © 2014 Elsevier B.V. All rights reserved.

Nanofibrillated Cellulose-Assisted Synthesis of Fiber-Like ZnO-ZnFe2O4 Composites with Enhanced Visible-Light-Driven Photocatalytic Activity

NASA Astrophysics Data System (ADS)

Cai, Aijun; Guo, Aiying; Du, Liqiang; Chang, Yongfang; Wang, Xiuping

2018-05-01

In this article, fiber-like ZnO-ZnFe2O4 composites are obtained by using nanofibrillated cellulose as a biotemplate. The as-prepared composites exhibit strong absorbance in the visible-light region. The ZnO-ZnFe2O4 composites exhibit a similar bandgap (1.88 eV) compared with the ZnFe2O4 (1.85 eV). The ZnO-ZnFe2O4 composites can be easily collected by an external magnet, which contributes to improving the utilization efficiency of the photocatalysts. The photocatalytic activity of the ZnO-ZnFe2O4 catalysts was evaluated by photodegrading rhodamine B (RhB) under visible-light irradiation. Compared with ZnO and ZnFe2O4, the ZnO-ZnFe2O4 catalysts show higher photocatalytic activity due to the efficient electron-hole separation.

NITINOL Interconnect Device for Optical Fiber Waveguides

DTIC Science & Technology

1981-07-01

LE EL,~NAVSEA REPORT NO. S27L~kV-NL 4P fNSWNC TR 81-129 1 JULY 1981 0 NITINOL INTERC&INECT DEVICE FOR OPTICAL FIBER WAVEGUIDES FINAL REPORT A...ACCESSION NO. 3. RECIPIENT’S CATALOG NUMBER NSWC TR 81-129I 1-19 -A )ci , ’ 4 TI TL E (and Sbtitle) S. TYPE OF REPORT & PERIOD COVERED NITINOL ... NITINOL Optical Fibers 20. ABSTRACT (Continue on reverse side if neceeewy and identify by block number) Two different interconnect devices for optical

Optofluidic in-fiber interferometer based on hollow optical fiber with two cores.

PubMed

Yuan, Tingting; Yang, Xinghua; Liu, Zhihai; Yang, Jun; Li, Song; Kong, Depeng; Qi, Xiuxiu; Yu, Wenting; Long, Qunlong; Yuan, Libo

2017-07-24

We demonstrate a novel integrated optical fiber interferometer for in-fiber optofluidic detection. It is composed of a specially designed hollow optical fiber with a micro-channel and two cores. One core on the inner surface of the micro-channel is served as sensing arm and the other core in the annular cladding is served as reference arm. Fusion-and-tapering method is employed to couple light from a single mode fiber to the hollow optical fiber in this device. Sampling is realized by side opening a microhole on the surface of the hollow optical fiber. Under differential pressure between the end of the hollow fiber and the microhole, the liquids can form steady microflows in the micro-channel. Simultaneously, the interference spectrum of the interferometer device shifts with the variation of the concentration of the microfluid in the channel. The optofluidic in-fiber interferometer has a sensitivity of refractive index around 2508 nm/RIU for NaCl. For medicine concentration detection, its sensitivity is 0.076 nm/mmolL -1 for ascorbic acid. Significantly, this work presents a compact microfluidic in-fiber interferometer with a micro-channel which can be integrated with chip devices without spatial optical coupling and without complex manufacturing procedure of the waveguide on the chips.

Aligning Optical Fibers by Means of Actuated MEMS Wedges

NASA Technical Reports Server (NTRS)

Morgan, Brian; Ghodssi, Reza

2007-01-01

Microelectromechanical systems (MEMS) of a proposed type would be designed and fabricated to effect lateral and vertical alignment of optical fibers with respect to optical, electro-optical, optoelectronic, and/or photonic devices on integrated circuit chips and similar monolithic device structures. A MEMS device of this type would consist of a pair of oppositely sloped alignment wedges attached to linear actuators that would translate the wedges in the plane of a substrate, causing an optical fiber in contact with the sloping wedge surfaces to undergo various displacements parallel and perpendicular to the plane. In making it possible to accurately align optical fibers individually during the packaging stages of fabrication of the affected devices, this MEMS device would also make it possible to relax tolerances in other stages of fabrication, thereby potentially reducing costs and increasing yields. In a typical system according to the proposal (see Figure 1), one or more pair(s) of alignment wedges would be positioned to create a V groove in which an optical fiber would rest. The fiber would be clamped at a suitable distance from the wedges to create a cantilever with a slight bend to push the free end of the fiber gently to the bottom of the V groove. The wedges would be translated in the substrate plane by amounts Dx1 and Dx2, respectively, which would be chosen to move the fiber parallel to the plane by a desired amount Dx and perpendicular to the plane by a desired amount Dy. The actuators used to translate the wedges could be variants of electrostatic or thermal actuators that are common in MEMS.

Passively aligned multichannel fiber-pigtailing of planar integrated optical waveguides

NASA Astrophysics Data System (ADS)

Kremmel, Johannes; Lamprecht, Tobias; Crameri, Nino; Michler, Markus

2017-02-01

A silicon device to simplify the coupling of multiple single-mode fibers to embedded single-mode waveguides has been developed. The silicon device features alignment structures that enable a passive alignment of fibers to integrated waveguides. For passive alignment, precisely machined V-grooves on a silicon device are used and the planar lightwave circuit board features high-precision structures acting as a mechanical stop. The approach has been tested for up to eight fiber-to-waveguide connections. The alignment approach, the design, and the fabrication of the silicon device as well as the assembly process are presented. The characterization of the fiber-to-waveguide link reveals total coupling losses of (0.45±0.20 dB) per coupling interface, which is significantly lower than the values reported in earlier works. Subsequent climate tests reveal that the coupling losses remain stable during thermal cycling but increases significantly during an 85°C/85 Rh-test. All applied fabrication and bonding steps have been performed using standard MOEMS fabrication and packaging processes.

Low-Temperature Preparation of Ag-Doped ZnO Nanowire Arrays, DFT Study, and Application to Light-Emitting Diode.

PubMed

Pauporté, Thierry; Lupan, Oleg; Zhang, Jie; Tugsuz, Tugba; Ciofini, Ilaria; Labat, Frédéric; Viana, Bruno

2015-06-10

Doping ZnO nanowires (NWs) by group IB elements is an important challenge for integrating nanostructures into functional devices with better and tuned performances. The growth of Ag-doped ZnO NWs by electrodeposition at 90 °C using a chloride bath and molecular oxygen precursor is reported. Ag acts as an electrocatalyst for the deposition and influences the nucleation and growth of the structures. The silver atomic concentration in the wires is controlled by the additive concentration in the deposition bath and a content up to 3.7 atomic % is reported. XRD analysis shows that the integration of silver enlarges the lattice parameters of ZnO. The optical measurements also show that the direct optical bandgap of ZnO is reduced by silver doping. The bandgap shift and lattice expansion are explained by first principle calculations using the density functional theory (DFT) on the silver impurity integration as an interstitial (Ag(i)) and as a substitute of zinc atom (Ag(Zn)) in the crystal lattice. They notably indicate that Ag(Zn) doping forms an impurity band because of Ag 4d and O 2p orbital interactions, shifting the Fermi level toward the valence band. At least, Ag-doped ZnO vertically aligned nanowire arrays have been epitaxially grown on GaN(001) substrate. The heterostructure has been inserted in a light emitting device. UV-blue light emission has been achieved with a low emission threshold of 5 V and a tunable red-shifted emission spectrum related to the bandgap reduction induced by silver doping of the ZnO emitter material.

Thermionic photovoltaic energy converter

NASA Technical Reports Server (NTRS)

Chubb, D. L. (Inventor)

1985-01-01

A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

WOCSDICE󈧇 The 27th Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe May 26 - 28, 2003 Forigen, Switzerland

DTIC Science & Technology

2003-05-28

Rodrigues-Girones, M. Saglam, A. Megej, H.L. Hartnagel vi Recent Advances, Remaining Challenges in Wide Bandgap Semiconductors Colin ...R. H. Friend, and H. Sirringhaus, Science, 299, pp. 1881-1884, 2003. 19. C. J. Drury , C. M. J. Mutsaers, C. M. Hart, M. Matters, and D. M. de Leeuw

Special purpose modes in photonic band gap fibers

DOEpatents

Spencer, James; Noble, Robert; Campbell, Sara

2013-04-02

Photonic band gap fibers are described having one or more defects suitable for the acceleration of electrons or other charged particles. Methods and devices are described for exciting special purpose modes in the defects including laser coupling schemes as well as various fiber designs and components for facilitating excitation of desired modes. Results are also presented showing effects on modes due to modes in other defects within the fiber and due to the proximity of defects to the fiber edge. Techniques and devices are described for controlling electrons within the defect(s). Various applications for electrons or other energetic charged particles produced by such photonic band gap fibers are also described.

Two color high operating temperature HgCdTe photodetectors grown by molecular beam epitaxy on silicon substrates

NASA Astrophysics Data System (ADS)

Velicu, S.; Bommena, R.; Morley, M.; Zhao, J.; Fahey, S.; Cowan, V.; Morath, C.

2013-09-01

The development of a broadband IR focal plane array poses several challenges in the area of detector design, material, device physics, fabrication process, hybridization, integration and testing. The purpose of our research is to address these challenges and demonstrate a high-performance IR system that incorporates a HgCdTe-based detector array with high uniformity and operability. Our detector architecture, grown using molecular beam epitaxy (MBE), is vertically integrated, leading to a stacked detector structure with the capability to simultaneously detect in two spectral bands. MBE is the method of choice for multiplelayer HgCdTe growth because it produces material of excellent quality and allows composition and doping control at the atomic level. Such quality and control is necessary for the fabrication of multicolor detectors since they require advanced bandgap engineering techniques. The proposed technology, based on the bandgap-tunable HgCdTe alloy, has the potential to extend the broadband detector operation towards room temperature. We present here our modeling, MBE growth and device characterization results, demonstrating Auger suppression in the LWIR band and diffusion limited behavior in the MWIR band.

Quinoline-Flanked Diketopyrrolopyrrole Copolymers Breaking through Electron Mobility over 6 cm2 V-1 s-1 in Flexible Thin Film Devices.

PubMed

Ni, Zhenjie; Dong, Huanli; Wang, Hanlin; Ding, Shang; Zou, Ye; Zhao, Qiang; Zhen, Yonggang; Liu, Feng; Jiang, Lang; Hu, Wenping

2018-03-01

Herein, the design and synthesis of novel π-extended quinoline-flanked diketopyrrolopyrrole (DPP) [abbreviated as QDPP] motifs and corresponding copolymers named PQDPP-T and PQDPP-2FT for high performing n-type organic field-effect transistors (OFETs) in flexible organic thin film devices are reported. Serving as DPP-flankers in backbones, quinoline is found to effectively tune copolymer optoelectric properties. Compared with TDPP and pyridine-flanked DPP (PyDPP) analogs, widened bandgaps and strengthened electron deficiency are achieved. Moreover, both hole and electron mobility are improved two orders of magnitude compared to those of PyDPP analogs (PPyDPP-T and PPyDPP-2FT). Notably, featuring an all-acceptor-incorporated backbone, PQDPP-2FT exhibits electron mobility of 6.04 cm 2 V -1 s -1 , among the highest value in OFETs fabricated on flexible substrates to date. Moreover, due to the widened bandgap and strengthened electron deficiency of PQDPP, n-channel on/off ratio over 10 5 with suppressed hole transport is first realized in the ambipolar DPP-based copolymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Potential Fluctuations and Localization Effects in CZTS Single Crystals, as Revealed by Optical Spectroscopy

NASA Astrophysics Data System (ADS)

Bleuse, Joël; Ducroquet, Frédérique; Mariette, Henri

2018-03-01

Reports on Cu_2 ZnSn(S_x Se_{1-x} )_4 (CZTSSe) solar cell devices all show an open-circuit voltage lower than expected, especially when compared to CuIn_x Ga_{1-x} (S,Se)_2 devices, which reduces their power efficiency and delays their development. A high concentration of intrinsic defects in CZTSSe, and their stabilization through neutral complex formation, which induces some local fluctuations, are at the origin of local energy shifts in the conduction and valence band edges. The implied band tail in Cu_2 ZnSnS_4 is studied in this work by combining three types of optical spectroscopy data: emission spectra compared to photoluminescence excitation spectroscopy, emission spectra as a function of excitation power, and time-resolved photoluminescence spectra. All these data converge to show that both the bandgap and the band tail of localized states just below are dependent on the degree of order/disorder in the Cu/Zn cation sublattice of the quaternary structure: in the more ordered structures, the bandgap increases by about 50 meV, and the energy range of the band tail is decreased from about 110 to 70 meV.

Reduced graphene Oxide/ZnO nanostructures based rectifier diode

NASA Astrophysics Data System (ADS)

Bhatnagar, Sameeksha; Kumar, Ravi; Sharma, Monika; Kuanr, Bijoy K.

2017-05-01

We report on the fabrication and characterization of graphene oxide and reduced graphene oxide/ZnO nanostructures on ITO-coated glass substrates for the rectification properties of a heterojunction device. The composites of GO/ZnO and rGO/ZnO were synthesized by the modified Hummers method followed by annealing process in N2 and H2 ambient atmosphere at various temperatures. The structural and compositional analysis of the composite material have been investigated using X-ray diffraction spectroscopy and Raman spectroscopy. The optical properties of the composite films were studied by UV-visible spectroscopy and the band-gap was obtained by Tauc's plot. The band-gap reduces to 2.4 eV for the composite film as compared to ZnO film 3.26 eV. The I-V characteristics of ZnO thin films and rGO/ZnO films were done for different light conditions viz dark, ambient light and UV-illumination. It has been observed that the threshold voltage decreases when the sample was placed in UV-illumination. A direct variation in photo-response is revealed with the bias voltage as well as UV illumination. The fabricated device could be used as an Ultraviolet Photo-detector.

Broadband and omnidirectional light harvesting enhancement in photovoltaic devices with aperiodic TiO2 nanotube photonic crystal

NASA Astrophysics Data System (ADS)

Guo, Min; Su, Haijun; Zhang, Jun; Liu, Lin; Fu, Nianqing; Yong, Zehui; Huang, Haitao; Xie, Keyu

2017-03-01

Design of more effective broadband light-trapping elements to improve the light harvesting efficiency under both normal and tilted light for solar cells and other photonic devices is highly desirable. Herein we present a theoretical analysis on the optical properties of a novel TiO2 nanotube aperiodic photonic crystal (NT APC) following an aperiodic sequences and its photocurrent enhancement effect for dye-sensitized solar cells (DSSCs) under various incidence angles. It is found that, compared to regular PC, the designed TiO2 NT APC owns broader reflection region and a desired omnidirectional reflection (ODR) bandgaps, leading to considerable and stable photocurrent enhancement under both normal and oblique light. The effects of the structural parameters of the TiO2 NT APC, including the average lattice constant and the common sequence difference, on the optical properties, ODR bandgaps and absorption magnification of the integrated DSSCs are investigated in detail. Moreover, the angular dependence of photocurrent enhancement and angular compensation effect of such TiO2 NT APCs are also provided to offer a guidance on the optimum structural parameters design under different engineering application conditions.

Small-Molecule Acceptor Based on the Heptacyclic Benzodi(cyclopentadithiophene) Unit for Highly Efficient Nonfullerene Organic Solar Cells.

PubMed

Kan, Bin; Feng, Huanran; Wan, Xiangjian; Liu, Feng; Ke, Xin; Wang, Yanbo; Wang, Yunchuang; Zhang, Hongtao; Li, Chenxi; Hou, Jianhui; Chen, Yongsheng

2017-04-05

A new nonfullerene small molecule with acceptor-donor-acceptor (A-D-A) structure, namely, NFBDT, based on a heptacyclic benzodi(cyclopentadithiophene) (FBDT) unit using benzo[1,2-b:4,5-b']dithiophene as the core unit, was designed and synthesized. Its absorption ability, energy levels, thermal stability, as well as photovoltaic performances were fully investigated. NFBDT exhibits a low optical bandgap of 1.56 eV resulting in wide and efficient absorption that covered the range from 600 to 800 nm, and suitable energy levels as an electron acceptor. With the widely used and successful wide bandgap polymer PBDB-T selected as the electron donor material, an optimized PCE of 10.42% was obtained for the PBDB-T:NFBDT-based device with an outstanding short-circuit current density of 17.85 mA cm -2 under AM 1.5G irradiation (100 mW cm -2 ), which is so far among the highest performance of NF-OSC devices. These results demonstrate that the BDT unit could also be applied for designing NF-acceptors, and the fused-ring benzodi(cyclopentadithiophene) unit is a prospective block for designing new NF-acceptors with excellent performance.

A highly attenuating and frequency tailorable annular hole phononic crystal for surface acoustic waves.

PubMed

Ash, B J; Worsfold, S R; Vukusic, P; Nash, G R

2017-08-02

Surface acoustic wave (SAW) devices are widely used for signal processing, sensing and increasingly for lab-on-a-chip applications. Phononic crystals can control the propagation of SAW, analogous to photonic crystals, enabling components such as waveguides and cavities. Here we present an approach for the realisation of robust, tailorable SAW phononic crystals, based on annular holes patterned in a SAW substrate. Using simulations and experiments, we show that this geometry supports local resonances which create highly attenuating phononic bandgaps at frequencies with negligible coupling of SAWs into other modes, even for relatively shallow features. The enormous bandgap attenuation is up to an order-of-magnitude larger than that achieved with a pillar phononic crystal of the same size, enabling effective phononic crystals to be made up of smaller numbers of elements. This work transforms the ability to exploit phononic crystals for developing novel SAW device concepts, mirroring contemporary progress in photonic crystals.The control and manipulation of propagating sound waves on a surface has applications in on-chip signal processing and sensing. Here, Ash et al. deviate from standard designs and fabricate frequency tailorable phononic crystals with an order-of-magnitude increase in attenuation.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, M. P.; US Naval Research Laboratory, Washington, DC 20375; Yakes, M. K.

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interfacemore » is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.« less

Bandgap engineering of GaN nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ming, Bang-Ming; Yan, Hui; Wang, Ru-Zhi, E-mail: wrz@bjut.edu.cn, E-mail: yamcy@csrc.ac.cn

2016-05-15

Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of [0001] GaN nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN nanowires increases linearly with S/V, whilemore » it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN nanowires for their applications in novel nano-devices.« less

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion.

PubMed

Martí, A; Luque, A

2015-04-22

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure

NASA Astrophysics Data System (ADS)

Zhang, Zhipeng; von Wenckstern, Holger; Lenzner, Jörg; Grundmann, Marius

2016-06-01

We report on ultraviolet photodiodes with integrated optical filter based on the wurtzite (Mg,Zn)O thin films. Tuning of the bandgap of filter and active layers was realized by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. Filter and active layers of the device were deposited on opposite sides of a sapphire substrate with nearly parallel compositional gradients. Ensure that for each sample position the bandgap of the filter layer blocking the high energy radiation is higher than that of the active layer. Different oxygen pressures during the two depositions runs. The absorption edge is tuned over 360 meV and the spectral bandwidth of photodiodes is typically 100 meV and as low as 50 meV.

Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives.

PubMed

Casalino, Maurizio; Coppola, Giuseppe; Iodice, Mario; Rendina, Ivo; Sirleto, Luigi

2010-01-01

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

PubMed Central

Casalino, Maurizio; Coppola, Giuseppe; Iodice, Mario; Rendina, Ivo; Sirleto, Luigi

2010-01-01

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared. PMID:22163487

Structural and electronic properties of Ga2O3-Al2O3 alloys

NASA Astrophysics Data System (ADS)

Peelaers, Hartwin; Varley, Joel B.; Speck, James S.; Van de Walle, Chris G.

2018-06-01

Ga2O3 is emerging as an important electronic material. Alloying with Al2O3 is a viable method to achieve carrier confinement, to increase the bandgap, or to modify the lattice parameters. However, the two materials have very different ground-state crystal structures (monoclinic β-gallia for Ga2O3 and corundum for Al2O3). Here, we use hybrid density functional theory calculations to assess the alloy stabilities and electronic properties of the alloys. We find that the monoclinic phase is the preferred structure for up to 71% Al incorporation, in close agreement with experimental phase diagrams, and that the ordered monoclinic AlGaO3 alloy is exceptionally stable. We also discuss bandgap bowing, lattice constants, and band offsets that can guide future synthesis and device design efforts.

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

PubMed Central

Martí, A.; Luque, A.

2015-01-01

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions. PMID:25902374

A Solar Thermophotovoltaic Electric Generator for Remote Power Applications

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.

1998-01-01

We have successfully demonstrated that a solar thermophotovoltaic (TPV) system with a SiC graybody emitter and the monolithic interconnected module device technology can be realized. A custom-designed solar cavity was made to house the SiC emitter and the Monolithic Integrated Module (MIM) strings for testing in a Stirling dish solar concentrator. Five 1x1-cm MIMs, with a bandgap of 0.74 eV, were mounted on a specially designed water-cooled heatsink and were electrically connected in series to form a string. Two such strings were fabricated and tested, as well as high-performance 2x2-cm MIMs with a bandgap of 0.74 eV. Very high output power density values between 0.82 and 0.90 W/ square cm were observed for an average emitter temperature of 1501 K.

Development of silicon carbide semiconductor devices for high temperature applications

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony; Petit, Jeremy B.

1991-01-01

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Demonstration of a Nano-Enabled Space Power System

NASA Technical Reports Server (NTRS)

Raffaelle, Ryne; Hunter, Roger C.; Baker, Christopher

2017-01-01

The Nano-Enabled Space Power System will demonstrate power systems with nanomaterial-enhanced components as are placement for CubeSat power generation, transmission, and storage. Successful flights of these nano-power systems will accelerate the use of this revolutionary technology in the aerospace industry. The use of nano materials in solar cells, wire harnesses,and lithium ion batteries can increase the device performance without significantly altering the devices physical dimensions or the devices operating range (temperature,voltage, current). In many cases, the use of nanomaterials widens the viable range of operating conditions, such as increased depth of discharge of lithium ion batteries, tunable bandgaps in solar cells, and increased flexure tolerance of wire harnesses.

Performance analysis of GeSn-alloy-based multiple quantum well transistor laser

NASA Astrophysics Data System (ADS)

Ranjan, Ravi; Pareek, Prakash; Anwer Askari, Syed Sadique; Das, Mukul K.

2018-02-01

The Group IV Photonics (GFP) which include an alloy of Si, Ge & Sn that gives a direct bandgap material (GeSn, SiGeSn) in near and mid-IR region used as an active material in photonics devices. The multiple quantum well SiGeSn/GeSn transistor laser structure is considered in this paper and performance parameters are evaluated for the same. The result shows that the threshold base current density (2.6 kA/cm2) for the proposed device initially decreases with increasing number of quantum well (QW) and later on it saturates. The current gain and output photon density of the device decreases and increases respectively, with increasing number of QW.

Integrating nanostructured electrodes in organic photovoltaic devices for enhancing near-infrared photoresponse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nardes, Alexandre M.; Ahn, Sungmo; Rourke, Devin

2016-12-01

We introduce a simple methodology to integrate prefabricated nanostructured-electrodes in solution-processed organic photovoltaic (OPV) devices. The tailored 'photonic electrode' nanostructure is used for light management in the device and for hole collection. This approach opens up new possibilities for designing photonically active structures that can enhance the absorption of sub-bandgap photons in the active layer. We discuss the design, fabrication and characterization of photonic electrodes, and the methodology for integrating them to OPV devices using a simple lamination technique. We demonstrate theoretically and experimentally that OPV devices using photonic electrodes show a factor of ca. 5 enhancement in external quantummore » efficiency (EQE) in the near infrared region. We use simulations to trace this observed efficiency enhancement to surface plasmon polariton modes in the nanostructure.« less

Solid state carbon nanotube device for controllable trion electroluminescence emission

NASA Astrophysics Data System (ADS)

Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2016-03-01

Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07468a

Side-polished fiber based gain-flattening filter for erbium doped fiber amplifiers

NASA Astrophysics Data System (ADS)

Varshney, R. K.; Singh, A.; Pande, K.; Pal, B. P.

2007-03-01

A simple and accurate novel normal mode analysis has been developed to take into account the effect of the non-uniform depth of polishing in the study of the transmission characteristics of optical waveguide devices based on loading of a side-polished fiber half-coupler with a multimode planar waveguide. We apply the same to design and fabricate a gain-flattening filter suitable for fiber amplifiers. The wavelength dependent filtering action of the overall device could demonstrate flattening of an EDFA gain spectrum within ±0.7 dB over a bandwidth of 30 nm in the C-band. Results obtained by the present analysis agree very well with our experimental results. This present analysis should be very useful in the accurate design and analysis of any SPF-MMOW device/component including side-polished fiber based sensors.

Designing optical-fiber modulators by using magnetic fluids.

PubMed

Horng, H E; Chieh, J J; Chao, Y H; Yang, S Y; Hong, Chin-Yih; Yang, H C

2005-03-01

To reduce interface loss between optical fibers and devices in telecommunication systems, the development of an optical-fiber-based device that can be fused directly with fibers is important. A novel optical modulator consisting of a bare fiber core surrounded by magnetic fluids instead of by a SiO2 cladding layer is proposed. Applying a magnetic field raises the refractive index of the magnetic fluid. Thus we can control the occurrence of total reflection at the interface between the fiber core and the magnetic fluid when light propagates along the fiber. As a result, the intensity of the outgoing light is modulated by variation in field strength. Details of the design, fabrication, and working properties of such a modulator are presented.

Fiber Optic Temperature Sensor Based on Multimode Interference Effects

NASA Astrophysics Data System (ADS)

Aguilar-Soto, J. G.; Antonio-Lopez, J. E.; Sanchez-Mondragon, J. J.; May-Arrioja, D. A.

2011-01-01

A novel fiber optic temperature sensor based on multimode interference was designed, fabricated and tested. The sensor is very simple and inexpensive since we only need to splice a section of multimode fiber between two single mode fibers. Using this device a sensing range of 25°C to 375°C is demonstrated. We should also highlight that due to the pass-band filter response of MMI devices, multiplexing is rather simple by just changing the length of the multimode section.

Rotating fiber array molecular driver and molecular momentum transfer device constructed therewith

DOEpatents

Milleron, Norman

1983-01-01

A rotating fiber array molecular driver is disclosed which includes a magnetically suspended and rotated central hub to which is attached a plurality of elongated fibers extending radially therefrom. The hub is rotated so as to straighten and axially extend the fibers and to provide the fibers with a tip speed which exceeds the average molecular velocity of fluid molecules entering between the fibers. Molecules colliding with the sides of the rotating fibers are accelerated to the tip speed of the fiber and given a momentum having a directional orientation within a relatively narrow distribution angle at a point radially outward of the hub, which is centered and peaks at the normal to the fiber sides in the direction of fiber rotation. The rotating fiber array may be used with other like fiber arrays or with other stationary structures to form molecular momentum transfer devices such as vacuum pumps, molecular separators, molecular coaters, or molecular reactors.

FIBER AND INTEGRATED OPTICS: Matching of fiber and strip optical waveguides by graded-index optical matching components

NASA Astrophysics Data System (ADS)

Shmal'ko, A. V.; Gordova, M. R.; Lamekin, V. F.; Nikolaev, I. V.; Sakharov, V. V.; Smirnov, V. L.; Polyantsev, A. S.

1990-01-01

A method for selection and calculation of the parameters of axisymmetric and anamorphic graded-index lenses for optical matching devices is developed and tested. These devices are intended for detachable connectors joining single-mode fibers to strip optical waveguides and are characterized by a greater tolerance to a mismatch between these waveguides. An experimental study is reported of a prototype of an optical matching device based on graded-index lenses characterized by insertion losses from 1-3 dB.

Application and the key technology on high power fiber-optic laser in laser weapon

NASA Astrophysics Data System (ADS)

Qu, Zhou; Li, Qiushi; Meng, Haihong; Sui, Xin; Zhang, Hongtao; Zhai, Xuhua

2014-12-01

The soft-killing laser weapon plays an important role in photoelectric defense technology. It can be used for photoelectric detection, search, blinding of photoelectric sensor and other devices on fire control and guidance devices, therefore it draws more and more attentions by many scholars. High power fiber-optic laser has many virtues such as small volume, simple structure, nimble handling, high efficiency, qualified light beam, easy thermal management, leading to blinding. Consequently, it may be used as the key device of soft-killing laser weapon. The present study introduced the development of high power fiber-optic laser and its main features. Meanwhile the key technology of large mode area (LMA) optical fiber design, the beam combination technology, double-clad fiber technology and pumping optical coupling technology was stated. The present study is aimed to design high doping LMA fiber, ensure single mode output by increasing core diameter and decrease NA. By means of reducing the spontaneous emission particle absorbed by fiber core and Increasing the power density in the optical fiber, the threshold power of nonlinear effect can increase, and the power of single fiber will be improved. Meantime, high power will be obtained by the beam combination technology. Application prospect of high power fiber laser in photoelectric defense technology was also set forth. Lastly, the present study explored the advantages of high power fiber laser in photoelectric defense technology.

Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Jia, Roger; Zhu, Tony; Bulović, Vladimir; Fitzgerald, Eugene A.

2018-05-01

III-IV-V heterovalent alloys have the potential to satisfy the need for infrared bandgap materials that also have lattice constants near GaAs. In this work, significant room temperature photoluminescence is reported for the first time in high quality III-IV-V alloys grown by metalorganic chemical vapor deposition. Pronounced phase separation, a characteristic suspected to quench luminescence in the alloys in the past, was successfully inhibited by a modified growth process. Small scale composition fluctuations were observed in the alloys; higher growth temperatures resulted in fluctuations with a striated morphology, while lower growth temperatures resulted in fluctuations with a speckled morphology. The composition fluctuations cause bandgap narrowing in the alloys—measurements of various compositions of (GaAs)1-x(Ge2)x alloys reveal a maximum energy transition of 0.8 eV under 20% Ge composition rather than a continuously increasing transition with the decreasing Ge composition. Additionally, luminescence intensity decreased with the decreasing Ge composition. The alloys appear to act as a Ge-like solid penetrating a GaAs lattice, resulting in optical properties similar to those of Ge but with a direct-bandgap nature; a decrease in the Ge composition corresponds to a reduction in the light-emitting Ge-like material within the lattice. An energy transition larger than 0.8 eV was obtained through the addition of silicon to the (GaAs)1-x(Ge2)x alloy. The results indicate significant promise for III-IV-V alloys as potential materials for small bandgap optical devices with previously unachievable lattice constants.

Distributed gas detection system and method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Challener, William Albert; Palit, Sabarni; Karp, Jason Harris

A distributed gas detection system includes one or more hollow core fibers disposed in different locations, one or more solid core fibers optically coupled with the one or more hollow core fibers and configured to receive light of one or more wavelengths from a light source, and an interrogator device configured to receive at least some of the light propagating through the one or more solid core fibers and the one or more hollow core fibers. The interrogator device is configured to identify a location of a presence of a gas-of-interest by examining absorption of at least one of themore » wavelengths of the light at least one of the hollow core fibers.« less

Microinterferometric optical phase tomography for measuring small, asymmetric refractive-index differences in the profiles of optical fibers and fiber devices.

PubMed

Bachim, Brent L; Gaylord, Thomas K

2005-01-20

A new technique, microinterferometric optical phase tomography, is introduced for use in measuring small, asymmetric refractive-index differences in the profiles of optical fibers and fiber devices. The method combines microscopy-based fringe-field interferometry with parallel projection-based computed tomography to characterize fiber index profiles. The theory relating interference measurements to the projection set required for tomographic reconstruction is given, and discrete numerical simulations are presented for three test index profiles that establish the technique's ability to characterize fiber with small, asymmetric index differences. An experimental measurement configuration and specific interferometry and tomography practices employed in the technique are discussed.

Cathode Degradation in Thallium Bromide Devices

NASA Astrophysics Data System (ADS)

Datta, Amlan; Motakef, Shariar

2015-06-01

Thallium bromide (TlBr) is a wide bandgap, compound semiconductor with high gamma-ray stopping power and promising physical properties. However, performance degradation and the eventual irreversible failure of TlBr devices can occur rapidly at room temperature, due to “polarization”, caused by the electromigration of Tl+ and Br- ions to the electrical contacts across the device. Using the Accelerated Device Degradation (ADD) experiment, the degradation phenomena in TlBr devices have been visualized and recorded. This paper focuses on “ageing” of the device cathode at various temperatures. ADD is a fast and reliable direct characterization technique that can be used to identify the effects of various growth and post-growth process modifications on device degradation. Using this technique we have identified cathode degradation with the migration of Br- ions and an associated generation and growth of Thallium-rich fractal “ferns” from the cathode. Its effect on the radiation response of the device has also been discussed in this paper. The chemical changes in the cathode were characterized using Energy-dispersive X-ray spectroscopy.

Nano-stepper-driven optical shutter for applications in free-space micro-optics

NASA Astrophysics Data System (ADS)

Zawadzka, Justyna; Li, Lijie; Unamuno, Anartz; Uttamchandani, Deepak G.

2002-09-01

In this paper we report a simple design of a micro-optical shutter/attenuator. The standard MUMPS process was used to fabricate the device. A vertically erected, gold-coated, 200x300 mm side length micro-mirror was precisely placed between the end faces of two closely spaced optical fibers. The position of the micro-mirror with respect to the optical fiber end face was controlled by a nano-stepping motor array. Optical and mechanical tests were performed on the device. A 1.55 mm laser beam was sent along the optical fiber. When the micro-mirror was removed from the front of the fiber, the coupling efficiency between two fibers was -10 dBm. Once the micro-mirror was placed in the optical path the coupling efficiency dropped to -51.5 dBm. The best attenuation was obtained when the micro-mirror blocked the whole cross-section of the laser beam diameter. It is evident that the device can operate as a high precision fiber optic attenuator or shutter.

Solar cells using quantum funnels.

PubMed

Kramer, Illan J; Levina, Larissa; Debnath, Ratan; Zhitomirsky, David; Sargent, Edward H

2011-09-14

Colloidal quantum dots offer broad tuning of semiconductor bandstructure via the quantum size effect. Devices involving a sequence of layers comprised of quantum dots selected to have different diameters, and therefore bandgaps, offer the possibility of funneling energy toward an acceptor. Here we report a quantum funnel that efficiently conveys photoelectrons from their point of generation toward an intended electron acceptor. Using this concept we build a solar cell that benefits from enhanced fill factor as a result of this quantum funnel. This concept addresses limitations on transport in soft condensed matter systems and leverages their advantages in large-area optoelectronic devices and systems.

Si based GeSn light emitter: mid-infrared devices in Si photonics

NASA Astrophysics Data System (ADS)

Yu, S. Q.; Ghetmiri, S. A.; Du, W.; Margetis, J.; Zhou, Y.; Mosleh, A.; Al-Kabi, S.; Nazzal, A.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B.; Naseem, H. A.

2015-02-01

Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm2.

Long-range energy transfer in self-assembled quantum dot-DNA cascades

NASA Astrophysics Data System (ADS)

Goodman, Samuel M.; Siu, Albert; Singh, Vivek; Nagpal, Prashant

2015-11-01

The size-dependent energy bandgaps of semiconductor nanocrystals or quantum dots (QDs) can be utilized in converting broadband incident radiation efficiently into electric current by cascade energy transfer (ET) between layers of different sized quantum dots, followed by charge dissociation and transport in the bottom layer. Self-assembling such cascade structures with angstrom-scale spatial precision is important for building realistic devices, and DNA-based QD self-assembly can provide an important alternative. Here we show long-range Dexter energy transfer in QD-DNA self-assembled single constructs and ensemble devices. Using photoluminescence, scanning tunneling spectroscopy, current-sensing AFM measurements in single QD-DNA cascade constructs, and temperature-dependent ensemble devices using TiO2 nanotubes, we show that Dexter energy transfer, likely mediated by the exciton-shelves formed in these QD-DNA self-assembled structures, can be used for efficient transport of energy across QD-DNA thin films.The size-dependent energy bandgaps of semiconductor nanocrystals or quantum dots (QDs) can be utilized in converting broadband incident radiation efficiently into electric current by cascade energy transfer (ET) between layers of different sized quantum dots, followed by charge dissociation and transport in the bottom layer. Self-assembling such cascade structures with angstrom-scale spatial precision is important for building realistic devices, and DNA-based QD self-assembly can provide an important alternative. Here we show long-range Dexter energy transfer in QD-DNA self-assembled single constructs and ensemble devices. Using photoluminescence, scanning tunneling spectroscopy, current-sensing AFM measurements in single QD-DNA cascade constructs, and temperature-dependent ensemble devices using TiO2 nanotubes, we show that Dexter energy transfer, likely mediated by the exciton-shelves formed in these QD-DNA self-assembled structures, can be used for efficient transport of energy across QD-DNA thin films. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr04778a

Distributed fiber-optic laser-ultrasound generation based on ghost-mode of tilted fiber Bragg gratings.

PubMed

Tian, Jiajun; Zhang, Qi; Han, Ming

2013-03-11

Active ultrasonic testing is widely used for medical diagnosis, material characterization and structural health monitoring. Ultrasonic transducer is a key component in active ultrasonic testing. Due to their many advantages such as small size, light weight, and immunity to electromagnetic interference, fiber-optic ultrasonic transducers are particularly attractive for permanent, embedded applications in active ultrasonic testing for structural health monitoring. However, current fiber-optic transducers only allow effective ultrasound generation at a single location of the fiber end. Here we demonstrate a fiber-optic device that can effectively generate ultrasound at multiple, selected locations along a fiber in a controllable manner based on a smart light tapping scheme that only taps out the light of a particular wavelength for laser-ultrasound generation and allow light of longer wavelengths pass by without loss. Such a scheme may also find applications in remote fiber-optic device tuning and quasi-distributed biochemical fiber-optic sensing.

Method of Fabricating NASA-Standard Macro-Fiber Composite Piezoelectric Actuators

NASA Technical Reports Server (NTRS)

High, James W.; Wilkie, W. Keats

2003-01-01

The NASA Macro-Fiber Composite actuator is a flexible piezoelectric composite device designed for controlling vibrations and shape deformations in high performance aerospace structures. A complete method for fabricating the standard NASA Macro-Fiber Composite actuator is presented in this document. When followed precisely, these procedures will yield devices with electromechanical properties identical to the standard actuator manufactured by NASA Langley Research Center.

The influence of polymer purification on photovoltaic device performance of a series of indacenodithiophene donor polymers.

PubMed

Ashraf, Raja Shahid; Schroeder, Bob C; Bronstein, Hugo A; Huang, Zhenggang; Thomas, Stuart; Kline, R Joseph; Brabec, Christoph J; Rannou, Patrice; Anthopoulos, Thomas D; Durrant, James R; McCulloch, Iain

2013-04-11

A series of low bandgap indacenodithiophene polymers is purified by recycling SEC in order to isolate narrow polydispersity fractions. This additional purification step is found to have a significant beneficial influence on the solar cell performance and the reasons for this performance increase are investigated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low Power Band to Band Tunnel Transistors

DTIC Science & Technology

2010-12-15

burden, to Washington Headquarters Services , Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA...issues like poor dielectric interface quality and low density of states[1.10]. Further homo junction TFETs in these ultra low bandgap materials exhibit...drain leakage current on MOSFET scaling”, International Electron Devices Meeting, Vol.33, pp: 718-721, 1987 [1.3] W. M. Reddick, G. A. Amaratunga