Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

2012-01-01

"Super-hetero-epitaxial" combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a "Tri-Unity" system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF.sub.3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

Band structures in a two-dimensional phononic crystal with rotational multiple scatterers

NASA Astrophysics Data System (ADS)

Song, Ailing; Wang, Xiaopeng; Chen, Tianning; Wan, Lele

2017-03-01

In this paper, the acoustic wave propagation in a two-dimensional phononic crystal composed of rotational multiple scatterers is investigated. The dispersion relationships, the transmission spectra and the acoustic modes are calculated by using finite element method. In contrast to the system composed of square tubes, there exist a low-frequency resonant bandgap and two wide Bragg bandgaps in the proposed structure, and the transmission spectra coincide with band structures. Specially, the first bandgap is based on locally resonant mechanism, and the simulation results agree well with the results of electrical circuit analogy. Additionally, increasing the rotation angle can remarkably influence the band structures due to the transfer of sound pressure between the internal and external cavities in low-order modes, and the redistribution of sound pressure in high-order modes. Wider bandgaps are obtained in arrays composed of finite unit cells with different rotation angles. The analysis results provide a good reference for tuning and obtaining wide bandgaps, and hence exploring the potential applications of the proposed phononic crystal in low-frequency noise insulation.

Mobility of heavy metals through granitic soils using mini column infiltration test

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zarime, Nur 'Aishah; Yaacob, W. Z.W.

This study is about the mobility of cadmium through compacted granitic soils. Two granitic soils namely the Broga (BGR) and Kajang (KGR) granitic soils were collected in Selangor, Malaysia. Physical and chemical tests were applied for both granitic soils to determine the physical and chemical properties of soil materials. Physical test results shows granitic soils (BGR and KGR) have high percentage of sand ranging between 54%–63% and 46%–54% respectively, an intermediate and intermediate to high plasticity index as well as high specific gravity ie; 2.50–2.59 and 2.45–2.66 respectively. For chemical test, granitic soils shows acidic pH values ranged from 5.35–5.85more » for BGR and pH 5.32–5.54 for KGR. For organic matter, SSA and CEC test, it shows low values ranged from 0.22%–0.34% and 0.39%– 0.50% respectively for organic matter test, 17.96 m{sup 2}/g–21.93 m{sup 2}/g and 25.76 m{sup 2}/g–26.83 m{sup 2}/g respectively for SSA test and 0.79 meq/100g–1.35 meq/100g and 1.31 meq/100g–1.35 meq/100g respectively for CEC test. Mini column infiltration test was conducted to determine the retention of cadmium while flowing through granite soils. This test conducted based on the falling head permeability concepts. Different G-force ranging from 231G to 1442G was used in this test. The breakthrough curves show the concentration of Cd becomes higher with the increasing of G-force for both granitic samples (BGR and KGR). The selectivity sorption for both granites ranked in the following decreasing order of; 231G>519G>923G>1442G. Results demonstrated that granitic soils also have low buffering capacity due to low resist of pH changes.« less

Mobility of heavy metals through granitic soils using mini column infiltration test

NASA Astrophysics Data System (ADS)

Zarime, Nur'Aishah; Yaacob, W. Z. W.

2014-09-01

This study is about the mobility of cadmium through compacted granitic soils. Two granitic soils namely the Broga (BGR) and Kajang (KGR) granitic soils were collected in Selangor, Malaysia. Physical and chemical tests were applied for both granitic soils to determine the physical and chemical properties of soil materials. Physical test results shows granitic soils (BGR and KGR) have high percentage of sand ranging between 54%-63% and 46%-54% respectively, an intermediate and intermediate to high plasticity index as well as high specific gravity ie; 2.50-2.59 and 2.45-2.66 respectively. For chemical test, granitic soils shows acidic pH values ranged from 5.35-5.85 for BGR and pH 5.32-5.54 for KGR. For organic matter, SSA and CEC test, it shows low values ranged from 0.22%-0.34% and 0.39%- 0.50% respectively for organic matter test, 17.96 m2/g-21.93 m2/g and 25.76 m2/g-26.83 m2/g respectively for SSA test and 0.79 meq/100g-1.35 meq/100g and 1.31 meq/100g-1.35 meq/100g respectively for CEC test. Mini column infiltration test was conducted to determine the retention of cadmium while flowing through granite soils. This test conducted based on the falling head permeability concepts. Different G-force ranging from 231G to 1442G was used in this test. The breakthrough curves show the concentration of Cd becomes higher with the increasing of G-force for both granitic samples (BGR and KGR). The selectivity sorption for both granites ranked in the following decreasing order of; 231G>519G>923G>1442G. Results demonstrated that granitic soils also have low buffering capacity due to low resist of pH changes.

CD11b+ Gr1+ Bone Marrow Cells Ameliorate Liver Fibrosis by Producing Interleukin-10 in Mice

PubMed Central

Suh, Yang-Gun; Kim, Ja Kyung; Byun, Jin-Seok; Yi, Hyon-Seung; Lee, Young-Sun; Eun, Hyuk Soo; Kim, So Yeon; Han, Kwang-Hyub; Lee, Kwan Sik; Duester, Gregg; Friedman, Scott L.; Jeong, Won-Il

2012-01-01

Clinical trials and animal models suggest that infusion of bone marrow cells (BMC) is effective therapy for liver fibrosis, but the underlying mechanisms are obscure, especially those associated with early effects of BMC. Here, we analyzed the early impact of BMC infusion and identified the subsets of BMC showing antifibrotic effects in mice with carbon tetrachloride-induced liver fibrosis. An interaction between BMC and activated hepatic stellate cells (HSCs) was investigated using in vitro co-culturing system. Within 24 hours, infused BMC were in close contact with activated HSCs, which was associated with reduced liver fibrosis, enhanced hepatic expression of interleukin (IL)-10, expanded regulatory T cells but decreased macrophage infiltration in the liver at 24 hours after BMC infusion. In contrast, IL-10-deficient (IL-10−/−) BMC failed to reproduce these effects in the fibrotic livers. Intriguingly, in isolated cells, CD11b+Gr1highF4/80− and CD11b+Gr1+F4/80+ BMC expressed more IL-10 after co-culturing with activated HSCs, leading to suppressed expression of collagen and α-smooth muscle actin in HSCs. Moreover, these effects were either enhanced or abrogated, respectively, when BMC were co-cultured with IL-6−/− and retinaldehyde dehydrogenase 1−/− HSCs. Similar to murine data, human BMC expressed more IL-10 after co-culturing with human HSC lines (LX-2 or hTERT), and serum IL-10 levels were significantly elevated in patients with liver cirrhosis after autologous BMC infusion. Conclusion Activated HSCs increase IL-10 expression in BMC (CD11b+Gr1highF4/80− and CD11b+Gr1+F4/80+ cells), which in turn ameliorates liver fibrosis. Our findings could enhance the design of BMC therapy for liver fibrosis. PMID:22544759

Comparative and bioinformatics analyses of pathogenic bacterial secretomes identified by mass spectrometry in Burkholderia species.

PubMed

Nguyen, Thao Thi; Chon, Tae-Soo; Kim, Jaehan; Seo, Young-Su; Heo, Muyoung

2017-07-01

Secreted proteins (secretomes) play crucial roles during bacterial pathogenesis in both plant and human hosts. The identification and characterization of secretomes in the two plant pathogens Burkholderia glumae BGR1 and B. gladioli BSR3, which cause diseases in rice such as seedling blight, panicle blight, and grain rot, are important steps to not only understand the disease-causing mechanisms but also find remedies for the diseases. Here, we identified two datasets of secretomes in B. glumae BGR1 and B. gladioli BSR3, which consist of 118 and 111 proteins, respectively, using mass spectrometry approach and literature curation. Next, we characterized the functional properties, potential secretion pathways and sequence information properties of secretomes of two plant pathogens in a comparative analysis by various computational approaches. The ratio of potential non-classically secreted proteins (NCSPs) to classically secreted proteins (CSPs) in B. glumae BGR1 was greater than that in B. gladioli BSR3. For CSPs, the putative hydrophobic regions (PHRs) which are essential for secretion process of CSPs were screened in detail at their N-terminal sequences using hidden Markov model (HMM)-based method. Total 31 pairs of homologous proteins in two bacterial secretomes were indicated based on the global alignment (identity ≥ 70%). Our results may facilitate the understanding of the species-specific features of secretomes in two plant pathogenic Burkholderia species.

Role of CD11b+Gr-1+ myeloid cells in AGEs-induced myocardial injury in a mice model of acute myocardial infarction.

PubMed

Yao, Tongqing; Lu, Wenbin; Zhu, Jian; Jin, Xian; Ma, Genshan; Wang, Yuepeng; Meng, Shu; Zhang, Yachen; Li, Yigang; Shen, Chengxing

2015-01-01

Polymorph neutrophils are the predominant inflammatory cells and play a crucial role on the pathogenesis of myocardial injury at the early stage of acute myocardial infarction (AMI). However, the precursors and the differentiation of neutrophils are not fully understood. Here we explored the role of CD11b+Gr-1+ myeloid-derived suppressor cells (MDSCs) on myocardial injury in the absence and presence of advanced glycation end-products (AGEs) in a mice model of AMI. Male C57BL/6J mice were selected. Fluorescent actived cell sortor (FACS) data demonstrated significantly increased CD11b+Gr-1+ MDSCs both in peripheral blood circulation and in the ischemic myocardium at 24 hours post AMI. Quantitative-real-time PCR results also revealed significantly upregulated CD11b and Ly6G mRNA expression in the ischemic myocardium. AGEs treatment further aggravated these changes in AMI mice but not in sham mice. Moreover, AGEs treatment also significantly increased infarction size and enhanced cardiomyocyte apoptosis. The mRNA expression of pro-inflammatory cytokine IL-6 and iNOS2 was also significantly increased in AMI + AGEs group compared to AMI group. These data suggest enhanced infiltration of MDSCs by AGEs contributes to aggravated myocardial injury in AMI mice, which might be one of the mechanisms responsible for severer myocardial injury in AMI patients complicating diabetes.

Brain-derived neurotrophic factor in the nucleus tractus solitarii modulates glucose homeostasis after carotid chemoreceptor stimulation in rats.

PubMed

Montero, Sergio; Cuéllar, Ricardo; Lemus, Mónica; Avalos, Reyes; Ramírez, Gladys; de Álvarez-Buylla, Elena Roces

2012-01-01

Neuronal systems, which regulate energy intake, energy expenditure and endogenous glucose production, sense and respond to input from hormonal related signals that convey information from body energy availability. Carotid chemoreceptors (CChr) function as sensors for circulating glucose levels and contribute to glycemic counterregulatory responses. Brain-derived neurotrophic factor (BDNF) that plays an important role in the endocrine system to regulate glucose metabolism could play a role in hyperglycemic glucose reflex with brain glucose retention (BGR) evoked by anoxic CChr stimulation. Infusing BDNF into the nucleus tractus solitarii (NTS) before CChr stimulation, showed that this neurotrophin increased arterial glucose and BGR. In contrast, BDNF receptor (TrkB) antagonist (K252a) infusions in NTS resulted in a decrease in both glucose variables.

Bandgap opening in hydrogenated germanene

NASA Astrophysics Data System (ADS)

Yao, Q.; Zhang, L.; Kabanov, N. S.; Rudenko, A. N.; Arjmand, T.; Rahimpour Soleimani, H.; Klavsyuk, A. L.; Zandvliet, H. J. W.

2018-04-01

We have studied the hydrogenation of germanene synthesized on Ge2Pt crystals using scanning tunneling microscopy and spectroscopy. The germanene honeycomb lattice is buckled and consists of two hexagonal sub-lattices that are slightly displaced with respect to each other. The hydrogen atoms adsorb exclusively on the Ge atoms of the upward buckled hexagonal sub-lattice. At a hydrogen exposure of about 100 L, the (1 × 1) buckled honeycomb structure of germanene converts to a (2 × 2) structure. Scanning tunneling spectra recorded on this (2 × 2) structure reveal the opening of a bandgap of about 0.2 eV. A fully (half) hydrogenated germanene surface is obtained after an exposure of about 9000 L hydrogen. The hydrogenated germanene, also referred to as germanane, has a sizeable bandgap of about 0.5 eV and is slightly n-type.

Contributions of oxygen vacancies and titanium interstitials to band-gap states of reduced titania

NASA Astrophysics Data System (ADS)

Li, Jingfeng; Lazzari, Rémi; Chenot, Stéphane; Jupille, Jacques

2018-01-01

The spectroscopic fingerprints of the point defects of titanium dioxide remain highly controversial. Seemingly indisputable experiments lead to conflicting conclusions in which oxygen vacancies and titanium interstitials are alternately referred to as the primary origin of the Ti 3 d band-gap states. We report on experiments performed by electron energy loss spectroscopy whose key is the direct annealing of only the very surface of rutile TiO2(110 ) crystals and the simultaneous measurement of its temperature via the Bose-Einstein loss/gain ratio. By surface preparations involving reactions with oxygen and water vapor, in particular, under electron irradiation, vacancy- and interstitial-related band-gap states are singled out. Off-specular measurements reveal that both types of defects contribute to a unique charge distribution that peaks in subsurface layers with a common dispersive behavior.

Outdoor measurements of a photovoltaic system using diffractive spectrum-splitting and concentration

DOE PAGES

Mohammad, N.; Schulz, M.; Wang, P.; ...

2016-09-16

In a single-bandgap absorber, photons having energy less than the bandgap are not absorbed, while those having energy larger than the bandgap lose the excess energy via thermalization. We present outdoor measurements of a photovoltaic system that overcomes these losses via spectrum splitting and concentration using a planar diffractive optic. The system was comprised of the diffractive optic coupled with GaInP and CIGS solar cells. The optic provides a geometric concentration of 3X for each solar cell. It is easily fabricated by single-step grayscale lithography and it is ultra-thin with a maximum thickness of only 2.5μm. Electrical measurements under directmore » sunlight demonstrated an increase of ~25% in total output power compared to the reference case without spectrum splitting and concentration. Since different bandgaps are in the same plane, the proposed photovoltaic system successfully circumvents the lattice-matching and current-matching issues in conventional tandem multi-junction solar cells. As a result, this system is also tolerant to solar spectrum variation and fill-factor degradation of constitutive solar cells.« less

Outdoor measurements of a photovoltaic system using diffractive spectrum-splitting and concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohammad, N.; Schulz, M.; Wang, P.

In a single-bandgap absorber, photons having energy less than the bandgap are not absorbed, while those having energy larger than the bandgap lose the excess energy via thermalization. We present outdoor measurements of a photovoltaic system that overcomes these losses via spectrum splitting and concentration using a planar diffractive optic. The system was comprised of the diffractive optic coupled with GaInP and CIGS solar cells. The optic provides a geometric concentration of 3X for each solar cell. It is easily fabricated by single-step grayscale lithography and it is ultra-thin with a maximum thickness of only 2.5μm. Electrical measurements under directmore » sunlight demonstrated an increase of ~25% in total output power compared to the reference case without spectrum splitting and concentration. Since different bandgaps are in the same plane, the proposed photovoltaic system successfully circumvents the lattice-matching and current-matching issues in conventional tandem multi-junction solar cells. As a result, this system is also tolerant to solar spectrum variation and fill-factor degradation of constitutive solar cells.« less

Accumulation of CD11b+Gr-1+ cells in the lung, blood and bone marrow of mice infected with highly pathogenic H5N1 and H1N1 influenza viruses

PubMed Central

Kotur, Mark S.; Stark, Gregory V.; Warren, Richard L.; Kasoji, Manjula; Craft, Jeremy L.; Albrecht, Randy A.; García-Sastre, Adolfo; Katze, Michael G.; Waters, Katrina M.; Vasconcelos, Daphne; Sabourin, Patrick J.; Bresler, Herbert S.; Sabourin, Carol L.

2017-01-01

Infection with pathogenic influenza viruses isassociated with intense inflammatory disease. Here, we investigated the innate immune response in mice infectedwith H5N1 A/Vietnam/1203/04 and with reassortanthuman H1N1 A/Texas/36/91 viruse s containing the virulence genes hemagglutinin (HA), neuraminidase (NA) and NS1 of the 1918 pandemic virus. Inclusion of the 1918 HAand NA glycoproteins rendered a seasonal H1N1 virus capable of inducing an exacerbated host innate immuneresponse similar to that observed for highly pathogenicA/Vietnam/1203/04 virus. Infection with 1918 HA/NA:Tx/91 and A/Vietnam/1203/04 were associated with severelung pathology, increased cytokine and chemokine production, and significant immune cell changes, including the presence of CD11b+Gr-1+cells in the blood, lung and bone marrow. Significant differential gene expression in the lung included pathways for cell death, apoptosis, production and response to reactive oxygen radicals, as well asarginine and proline meta bolism and chemokines associated with monocyte and neutrophil/granulocyte accumulation and/or activation. Arginase was produced in the lungof animals infected with A/Vietnam/1204. These results demonstrate that the innate immune cell response resultsin t he accumulation of CD11b+Gr-1+cells and products that have previously been shown to contribute to T cellsuppression. PMID:23397329

Shape optimization of solid-air porous phononic crystal slabs with widest full 3D bandgap for in-plane acoustic waves

NASA Astrophysics Data System (ADS)

D'Alessandro, Luca; Bahr, Bichoy; Daniel, Luca; Weinstein, Dana; Ardito, Raffaele

2017-09-01

The use of Phononic Crystals (PnCs) as smart materials in structures and microstructures is growing due to their tunable dynamical properties and to the wide range of possible applications. PnCs are periodic structures that exhibit elastic wave scattering for a certain band of frequencies (called bandgap), depending on the geometric and material properties of the fundamental unit cell of the crystal. PnCs slabs can be represented by plane-extruded structures composed of a single material with periodic perforations. Such a configuration is very interesting, especially in Micro Electro-Mechanical Systems industry, due to the easy fabrication procedure. A lot of topologies can be found in the literature for PnCs with square-symmetric unit cell that exhibit complete 2D bandgaps; however, due to the application demand, it is desirable to find the best topologies in order to guarantee full bandgaps referred to in-plane wave propagation in the complete 3D structure. In this work, by means of a novel and fast implementation of the Bidirectional Evolutionary Structural Optimization technique, shape optimization is conducted on the hole shape obtaining several topologies, also with non-square-symmetric unit cell, endowed with complete 3D full bandgaps for in-plane waves. Model order reduction technique is adopted to reduce the computational time in the wave dispersion analysis. The 3D features of the PnC unit cell endowed with the widest full bandgap are then completely analyzed, paying attention to engineering design issues.

S100a8/a9 released by CD11b+Gr1+ neutrophils activates cardiac fibroblasts to initiate angiotensin II-Induced cardiac inflammation and injury.

PubMed

Wu, Yina; Li, Yulin; Zhang, Congcong; A, Xi; Wang, Yueli; Cui, Wei; Li, Huihua; Du, Jie

2014-06-01

Angiotensin II induces cardiovascular injury, in part, by activating inflammatory response; however, the initial factors that trigger the inflammatory cascade remain unclear. Microarray analysis of cardiac tissue exposed to systemic angiotensin II infusion revealed that extracellular heterodimeric proteins S100a8/a9 were highly upregulated. The increase in S100a8/a9 mRNA of CD11b(+)Gr1(+) neutrophils isolated from both the peripheral blood and heart was highest on day 1 of angiotensin II infusion and decreased to baseline at day 7. Immunostaining showed that S100a8/a9 was primarily present in infiltrating CD11b(+)Gr1(+) neutrophils in the heart. The receptor for advanced glycation end products, an S100a8/a9 receptor, was expressed in cardiac fibroblasts (CFs). Microarray analysis and Bio-Plex protein array showed that treatment of CFs with recombinant S100a8/a9 activated multiple chemokine and cytokines released. Luciferase reporter assay indicated S100a8/a9-activated nuclear factor-κ B pathway in CFs. Consequently, recombinant S100a8/a9-treated CFs promoted migration of monocytes and CFs, whereas neutralizing S100a9 antibody blocked S100a9 or receptor for advanced glycation end products-suppressed cellular migration. Finally, administration of a neutralizing S100a9 antibody prevented angiotensin II infusion-induced nuclear factor-κ B activation, inflammatory cell infiltration, cytokine production, subsequent perivascular and interstitial fibrosis, and hypertrophy in heart. Our findings identify neutrophil-produced S100a8/a9 as an initial proinflammatory factor needed to trigger inflammation and cardiac injury during acute hypertension.

A Linearized Model for Wave Propagation through Coupled Volcanic Conduit-crack Systems Filled with Multiphase Magma

NASA Astrophysics Data System (ADS)

Liang, C.; Dunham, E. M.; OReilly, O. J.; Karlstrom, L.

2015-12-01

Both the oscillation of magma in volcanic conduits and resonance of fluid-filled cracks (dikes and sills) are appealing explanations for very long period signals recorded at many active volcanoes. While these processes have been studied in isolation, real volcanic systems involve interconnected networks of conduits and cracks. The overall objective of our work is to develop a model of wave propagation and ultimately eruptive fluid dynamics through this coupled system. Here, we present a linearized model for wave propagation through a conduit with multiple cracks branching off of it. The fluid is compressible and viscous, and is comprised of a mixture of liquid melt and gas bubbles. Nonequilibrium bubble growth and resorption (BGR) is quantified by introducing a time scale for mass exchange between phases, following the treatment in Karlstrom and Dunham (2015). We start by deriving the dispersion relation for crack waves travelling along the multiphase-magma-filled crack embedded in an elastic solid. Dissipation arises from magma viscosity, nonequilibrium BGR, and radiation of seismic waves into the solid. We next introduce coupling conditions between the conduit and crack, expressing conservation of mass and the balance of forces across the junction. Waves in the conduit, like those in the crack, are influenced by nonequilibrium BGR, but the deformability of the surrounding solid is far less important than for cracks. Solution of the coupled system of equations provides the evolution of pressure and fluid velocity within the conduit-crack system. The system has various resonant modes that are sensitive to fluid properties and to the geometry of the conduit and cracks. Numerical modeling of seismic waves in the solid allows us to generate synthetic seismograms.

FRESHEM - Fresh-saline groundwater distribution in Zeeland (NL) derived from airborne EM

NASA Astrophysics Data System (ADS)

Siemon, Bernhard; van Baaren, Esther; Dabekaussen, Willem; Delsman, Joost; Gunnik, Jan; Karaoulis, Marios; de Louw, Perry; Oude Essink, Gualbert; Pauw, Pieter; Steuer, Annika; Meyer, Uwe

2017-04-01

In a setting of predominantly saline surface waters, the availability of fresh water for agricultural purposes is not obvious in Zeeland, The Netherlands. Canals and ditches are mainly brackish to saline due to saline seepage, which originates from old marine deposits and salt-water transgressions during historical times. The only available fresh groundwater is present in the form of freshwater lenses floating on top of the saline groundwater. This fresh groundwater is vital for agricultural, industrial, ecological, water conservation and drinking water functions. An essential first step for managing this fresh groundwater properly is to know the present spatial fresh-brackish-saline groundwater distribution. As traditional salinity monitoring is labour-intensive, airborne electromagnetics (AEM), which is fast and can cover large areas in short time, is an efficient alternative. A consortium of BGR, Deltares and TNO started FRESHEM Zeeland (FREsh Salt groundwater distribution by Helicopter ElectroMagnetic survey in the Province of Zeeland) in October 2014. Within 3x2 weeks of the first project year, the entire area of about 2000 km2 was surveyed using BGR's helicopter-borne geophysical system totalling to about 10,000 line-km. The HEM datasets of 17 subareas were carefully processed using advanced BGR in-house software and inverted to 2.5 Million resistivity-depth models. Ground truthing demonstrated that the large-scale HEM results fit very well with small-scale ground EM data (ECPT). Based on this spatial resistivity distribution, a 3D voxel model for Chloride concentration was derived for the entire province taking into account geological model data (GeoTOP) for the lithology correction and local in-situ groundwater measurements for the translation of water conductivity to Chloride concentration. The 3D voxel model enables stakeholders to implement spatial Chloride concentration in their groundwater models.

Electrically Tunable Optical Delay Lines

DTIC Science & Technology

2003-04-01

layers [24]. References [1] Bendickson, J. M., J. P. Dowling, and M. Scalora , “Analytic expressions for the electromagnetic mode density in...finite, one-dimensional, photonic band-gap structures,” Phys. Rev. E 53, 4107 (1996). [2] Scalora , M., R. J. Flynn, S. B. Reinhardt, R. L. Fork, M. J

Shale Gas and Oil in Germany - Resources and Environmental Impacts

NASA Astrophysics Data System (ADS)

Ladage, Stefan; Blumenberg, Martin; Houben, Georg; Pfunt, Helena; Gestermann, Nicolai; Franke, Dieter; Erbacher, Jochen

2017-04-01

In light of the controversial debate on "unconventional" oil and gas resources and the environmental impacts of "fracking", the Federal Institute for Geosciences and Natural Resources (BGR) conducted a comprehensive resource assessment of shale gas and light tight oil in Germany and studied the potential environmental impacts of shale gas development and hydraulic fracturing from a geoscientific perspective. Here, we present our final results (BGR 2016), incorporating the majority of potential shale source rock formations in Germany. Besides shale gas, light tight oil has been assessed. According to our set of criteria - i.e. thermal maturity 0.6-1.2 %vitrinite reflectance (VR; oil) and >1.2 % VR (gas) respectively, organic carbon content > 2%, depth between 500/1000 m and 5000 m as well as a net thickness >20 m - seven potentially generative shale formations were indentified, the most important of them being the Lower Jurassic (Toarcian) Posidonia shale with both shale gas and tight oil potential. The North German basin is by far the most prolific basin. The resource assessment was carried out using a volumetric in-place approach. Variability inherent in the input parameters was accounted for using Monte-Carlo simulations. Technically recoverable resources (TRR) were estimated using recent, production-based recovery factors of North American shale plays and also employing Monte-Carlo simulations. In total, shale gas TRR range between 320 and 2030 bcm and tight oil TRR between 13 and 164 Mio. t in Germany. Tight oil potential is therefore considered minor, whereas the shale gas potential exceeds that of conventional resources by far. Furthermore an overview of numerical transport modelling approaches concerning environmental impacts of the hydraulic fracturing is given. These simulations are based on a representative lithostratigraphy model of the North-German basin, where major shale plays can be expected. Numerical hydrogeological modelling of frac fluid migration in the subsurface has been conducted, as well as stress modelling to estimate frac dimension magnitudes and the potential frequency of induced seismity. The results of these simulations reveal that the probabiltiy of impacts on shallow groundwater by the upward migration of fracking fluids from a deep shale formation through the geological underground in the North German basin is small. BGR 2016 - Schieferöl und Schiefergas in Deutschland - Potenziale und Umweltaspekte, 197p, Hannover, 2016: http://www.bgr.bund.de/DE/Themen/Energie/Downloads/Abschlussbericht_13MB_Schieferoelgaspotenzial_Deutschland_2016.pdf?__blob=publicationFile&v=5.

Shift current bulk photovoltaic effect in polar materials—hybrid and oxide perovskites and beyond

DOE PAGES

Tan, Liang Z.; Zheng, Fan; Young, Steve M.; ...

2016-08-26

Here, the bulk photovoltaic effect (BPVE) refers to the generation of a steady photocurrent and above-bandgap photovoltage in a single-phase homogeneous material lacking inversion symmetry. The mechanism of BPVE is decidedly different from the typical p–n junction-based photovoltaic mechanism in heterogeneous materials. Recently, there has been renewed interest in ferroelectric materials for solar energy conversion, inspired by the discovery of above-bandgap photovoltages in ferroelectrics, the invention of low bandgap ferroelectric materials and the rapidly improving power conversion efficiency of metal halide perovskites. However, as long as the nature of the BPVE and its dependence on composition and structure remain poorlymore » understood, materials engineering and the realisation of its true potential will be hampered. In this review article, we survey the history, development and recent progress in understanding the mechanisms of BPVE, with a focus on the shift current mechanism, an intrinsic BPVE that is universal to all materials lacking inversion symmetry. In addition to explaining the theory of shift current, materials design opportunities and challenges will be discussed for future applications of the BPVE.« less

The BGR Contingency Model for Leading Change

ERIC Educational Resources Information Center

Brown, Derek R.; Gordon, Raymond; Rose, Dennis Michael

2012-01-01

The continuing failure rates of change initiatives, combined with an increasingly complex business environment, have created significant challenges for the practice of change management. High failure rates suggest that existing change models are not working, or are being incorrectly used. A different mindset to change is required. The BGR…

Understanding the direction of evolution in Burkholderia glumae through comparative genomics.

PubMed

Lee, Hyun-Hee; Park, Jungwook; Kim, Jinnyun; Park, Inmyoung; Seo, Young-Su

2016-02-01

Members of the genus Burkholderia occupy remarkably diverse niches, with genome sizes ranging from ~3.75 to 11.29 Mbp. The genome of Burkholderia glumae ranges in size from ~5.81 to 7.89 Mbp. Unlike other plant pathogenic bacteria, B. glumae can infect a wide range of monocot and dicot plants. Comparative genome analysis of B. glumae strains can provide insight into genome variation as well as differential features of whole metabolism or pathways between multiple strains of B. glumae infecting the same host. Comparative analysis of complete genomes among B. glumae BGR1, B. glumae LMG 2196, and B. glumae PG1 revealed the largest departmentalization of genes onto separate replicons in B. glumae BGR1 and considerable downsizing of the genome in B. glumae LMG 2196. In addition, the presence of large-scale evolutionary events such as rearrangement and inversion and the development of highly specialized systems were found to be related to virulence-associated features in the three B. glumae strains. This connection may explain why this bacterium broadens its host range and reinforces its interaction with hosts.

Neonatal microbial colonization in mice promotes prolonged dominance of CD11b(+)Gr-1(+) cells and accelerated establishment of the CD4(+) T cell population in the spleen.

PubMed

Kristensen, Matilde B; Metzdorff, Stine B; Bergström, Anders; Damlund, Dina S M; Fink, Lisbeth N; Licht, Tine R; Frøkiær, Hanne

2015-09-01

To assess the microbial influence on postnatal hematopoiesis, we examined the role of early life microbial colonization on the composition of leukocyte subsets in the neonatal spleen. A high number of CD11b(+)Gr-1(+) splenocytes present perinatally was sustained for a longer period in conventionally colonized (CONV) mice than in mono-colonized (MC) and germfree (GF) mice, and the CD4(+) T cell population established faster in CONV mice. At the day of birth, compared to GF mice, the expression of Cxcl2 was up-regulated and Arg1 down-regulated in livers of CONV mice. This coincided with lower abundance of polylobed cells in the liver of CONV mice. An earlier peak in the expression of the genes Tjp1, Cdh1, and JamA in intestinal epithelial cells of CONV mice indicated an accelerated closure of the epithelial barrier. In conclusion, we have identified an important microbiota-dependent neonatal hematopoietic event, which we suggest impacts the subsequent development of the T cell population in the murine spleen.

Early impact of social isolation and breast tumor progression in mice.

PubMed

Madden, Kelley S; Szpunar, Mercedes J; Brown, Edward B

2013-03-01

Evidence from cancer patients and animal models of cancer indicates that exposure to psychosocial stress can promote tumor growth and metastasis, but the pathways underlying stress-induced cancer pathogenesis are not fully understood. Social isolation has been shown to promote tumor progression. We examined the impact of social isolation on breast cancer pathogenesis in adult female severe combined immunodeficiency (SCID) mice using the human breast cancer cell line, MDA-MB-231, a high β-adrenergic receptor (AR) expressing line. When group-adapted mice were transferred into single housing (social isolation) one week prior to MB-231 tumor cell injection into a mammary fat pad (orthotopic), no alterations in tumor growth or metastasis were detected compared to group-housed mice. When social isolation was delayed until tumors were palpable, tumor growth was transiently increased in singly-housed mice. To determine if sympathetic nervous system activation was associated with increased tumor growth, spleen and tumor norepinephrine (NE) was measured after social isolation, in conjunction with tumor-promoting macrophage populations. Three days after transfer to single housing, spleen weight was transiently increased in tumor-bearing and non-tumor-bearing mice in conjunction with reduced splenic NE concentration and elevated CD11b+Gr-1+ macrophages. At day 10 after social isolation, no changes in spleen CD11b+ populations or NE were detected in singly-housed mice. In the tumors, social isolation increased CD11b+Gr-1+, CD11b+Gr-1-, and F4/80+ macrophage populations, with no change in tumor NE. The results indicate that a psychological stressor, social isolation, elicits dynamic but transient effects on macrophage populations that may facilitate tumor growth. The transiency of the changes in peripheral NE suggest that homeostatic mechanisms may mitigate the impact of social isolation over time. Studies are underway to define the neuroendocrine mechanisms underlying the tumor-promoting effects of social isolation, and to determine the contributions of increased tumor macrophages to tumor pathogenesis. Copyright © 2012 Elsevier Inc. All rights reserved.

Post-tsunami helicopter-borne electromagnetics and surface hydrology along the coasts of Aceh, Indonesia

NASA Astrophysics Data System (ADS)

Meyer, U.; Ploethner, D.; Siemon, B.; Roettger, B.; Rehli, H.

2005-12-01

The earthquake and the tsunami-event on December 26th, 2004, caused the loss of life of more than 120,000 people, the missing and injuring of more than 110,000 people and the destruction of about 80% of all private houses, basic infrastructure and public facilities in the coastal region in the Province of Nanggroe Aceh Darussalam. The tsunami waves caused large scale coastal salt water intrusions and destroyed thousands of shallow drinking water wells. This presentation documents a project between the Indonesian and German governments that is dedicated to re-install the public life and to secure the future health and wealth of the people that suffered from the consequences of the catastrophe. The focal point is the water assessement in coastal areas of Aceh about six months after the tsunami. The aim of the project of the Federal Institute for Geosciences and Natural Resources (BGR) is to assist the Directorate General for Geology and Mineral Resources (DGGMR), the National De-velopment Planning Agency (BAPPENAS) and the Executive Agency for the Rehabilitation and Reconstruction in Aceh and Nias (BRR) in their efforts to plan and realize a sustainable reconstruction of community infrastructure (like freshwater supply) by providing geophysical, hydrogeological, geological and topographic data that will serve as a base for spatial planning. The main activities comprise an airborne geophysical survey and a hydrogeological reconnaissance survey. The target areas are: Banda Aceh (Aceh Besar), Calang (Aceh Raya), and Meulaboh (Aceh Barat). The helicopter-borne survey was conducted by the airborne group of the German Federal Institute for Geosciences and Natural Resources (BGR) from August to November 2005. The BGR helicopter-borne geophysical system includes five-frequency electromagnetics (HEM), magnetics (MAG) and gamma-ray spectrometry (SCI). The electromagnetic system provides information about the distribution of electrical conductivity in the earth down to a maximum depth of 150 m. The presentation will give first results and interpretations of the airborne and surface water assessments.

Proton Tolerance of SiGe Precision Voltage References for Extreme Temperature Range Electronics

NASA Astrophysics Data System (ADS)

Najafizadeh, Laleh; Bellini, Marco; Prakash, A. P. Gnana; Espinel, Gustavo A.; Cressler, John D.; Marshall, Paul W.; Marshall, Cheryl J.

2006-12-01

A comprehensive investigation of the effects of proton irradiation on the performance of SiGe BiCMOS precision voltage references intended for extreme environment operational conditions is presented. The voltage reference circuits were designed in two distinct SiGe BiCMOS technology platforms (first generation (50 GHz) and third generation (200 GHz)) in order to investigate the effect of technology scaling. The circuits were irradiated at both room temperature and at 77 K. Measurement results from the experiments indicate that the proton-induced changes in the SiGe bandgap references are minor, even down to cryogenic temperatures, clearly good news for the potential application of SiGe mixed-signal circuits in emerging extreme environments

Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

NASA Astrophysics Data System (ADS)

Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

2018-04-01

To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

Design for occupant protection in schools

NASA Astrophysics Data System (ADS)

Harris, Harold W.; Mehta, Kishor C.; McDonald, James R.

The authors of this paper live in Lubbock, Texas. Lubbock is situated on the High Plains of west Texas at the southwest end of the so-called "tornado alley" which stretches from Texas through Oklahoma and Kansas into the midwest. Schools with severe storm protection capabilities, as illustrated in the examples, were designed by BGR Architects/Engineers (A/E).

First principles and Debye model study of the thermodynamic, electronic and optical properties of MgO under high-temperature and pressure

NASA Astrophysics Data System (ADS)

Miao, Yurun; Li, Huayang; Wang, Hongjuan; He, Kaihua; Wang, Qingbo

2018-02-01

First principles and quasi-harmonic Debye model have been used to study the thermodynamic properties, enthalpies, electronic and optical properties of MgO up to the core-mantle boundary (CMB) condition (137 GPa and 3700 K). Thermodynamic properties calculation includes thermal expansion coefficient and capacity, which have been studied up to the CMB pressure (137 GPa) and temperature (3700 K) by the Debye model with generalized gradient approximation (GGA) and local-density approximation (LDA). First principles with hybrid functional method (PBE0) has been used to calculate the electronic and optical properties under pressure up to 137 GPa and 0 K. Our results show the Debye model with LDA and first principles with PBE0 can provide accurate thermodynamic properties, enthalpies, electronic and optical properties. Calculated enthalpies show that MgO keep NaCl (B1) structure up to 137 GPa. And MgO is a direct bandgap insulator with a 7.23 eV calculated bandgap. The bandgap increased with increasing pressure, which will induce a blue shift of optical properties. We also calculated the density of states (DOS) and discussed the relation between DOS and band, optical properties. Equations were used to fit the relations between pressure and bandgaps, absorption coefficient (α(ω)) of MgO. The equations can be used to evaluate pressure after careful calibration. Our calculations can not only be used to identify some geological processes, but also offer a reference to the applications of MgO in the future.

Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps

DOEpatents

Wanlass, Mark W [Golden, CO; Mascarenhas, Angelo [Lakewood, CO

2012-05-08

Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.

S100A8 Production in CXCR2-Expressing CD11b+Gr-1high Cells Aggravates Hepatitis in Mice Fed a High-Fat and High-Cholesterol Diet.

PubMed

Mukai, Kaori; Miyagi, Takuya; Nishio, Kumiko; Yokoyama, Yoshinobu; Yoshioka, Teppei; Saito, Yoshinobu; Tanaka, Satoshi; Shigekawa, Minoru; Nawa, Takatoshi; Hikita, Hayato; Sakamori, Ryotaro; Yoshihara, Harumasa; Imai, Yasuharu; Hiramatsu, Naoki; Tatsumi, Tomohide; Takehara, Tetsuo

2016-01-01

Nonalcoholic fatty liver disease (NAFLD) is a common chronic liver disease with a spectrum of presentations. S100A8 has been suggested to play a pivotal role as an endogenous immune-activator in inflammatory diseases. In this study, we investigated the involvement of S100A8 in the development of NAFLD. We used a diet model of NAFLD, in which mice were fed either a high-fat and high-cholesterol diet (HFHCD) or a normal diet (ND) as a control. We also assessed liver tissues from patients with NAFLD, including patients with nonalcoholic fatty liver (NAFL) and nonalcoholic steatohepatitis (NASH). HFHCD-fed mice, but not ND-fed mice, developed steatohepatitis. S100A8 expression was significantly elevated in the livers of HFHCD-fed mice compared with the controls. S100A8 was exclusively expressed in CXCR2-expressing CD11b(+)Gr-1(high) cells, which significantly increased in the livers of HFHCD-fed mice. These cells were F4/80 negative and did not possess a suppressor function. TNF-α expression was enhanced by S100A8 in primary liver leukocytes or a hepatocyte cell line and significantly elevated in the livers of HFHCD-fed mice. TNF-α was primarily produced from CD11b(+)F4/80(+) cells in liver leukocytes in response to S100A8. TNF-α deficiency attenuated hepatitis in HFHCD-fed mice. S100A8 was significantly more expressed in the liver tissues of patients with NASH than in those of patients with NAFL. In conclusion, these results suggest that S100A8 is primarily produced from CXCR2-expressing CD11b(+)Gr-1(high) cells, and it upregulates TNF-α production in CD11b(+)F4/80(+) cells through cellular cross-talk, which is an important mechanism in the development of NAFLD. Copyright © 2015 by The American Association of Immunologists, Inc.

Calibration of Seismic Sources during a Test Cruise with the new RV SONNE

NASA Astrophysics Data System (ADS)

Engels, M.; Schnabel, M.; Damm, V.

2015-12-01

During autumn 2014, several test cruises of the brand new German research vessel SONNE were carried out before the first official scientific cruise started in December. In September 2014, BGR conducted a seismic test cruise in the British North Sea. RV SONNE is a multipurpose research vessel and was also designed for the mobile BGR 3D seismic equipment, which was tested successfully during the cruise. We spend two days for calibration of the following seismic sources of BGR: G-gun array (50 l @ 150 bar) G-gun array (50 l @ 207 bar) single GI-gun (3.4 l @ 150 bar) For this experiment two hydrophones (TC4042 from Reson Teledyne) sampling up to 48 kHz were fixed below a drifting buoy at 20 m and 60 m water depth - the sea bottom was at 80 m depth. The vessel with the seismic sources sailed several up to 7 km long profiles around the buoy in order to cover many different azimuths and distances. We aimed to measure sound pressure level (SPL) and sound exposure level (SEL) under the conditions of the shallow North Sea. Total reflections and refracted waves dominate the recorded wave field, enhance the noise level and partly screen the direct wave in contrast to 'true' deep water calibration based solely on the direct wave. Presented are SPL and RMS power results in time domain, the decay with distance along profiles, and the somehow complicated 2D sound radiation pattern modulated by topography. The shading effect of the vessel's hull is significant. In frequency domain we consider 1/3 octave levels and estimate the amount of energy in frequency ranges not used for reflection seismic processing. Results are presented in comparison of the three different sources listed above. We compare the measured SPL decay with distance during this experiment with deep water modeling of seismic sources (Gundalf software) and with published results from calibrations with other marine seismic sources under different conditions: E.g. Breitzke et al. (2008, 2010) with RV Polarstern, Tolstoy et al. (2004) with RV Ewing and Tolstoy et al. (2009) with RV Langseth, and Crone et al. (2014) with RV Langseth.

Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering

NASA Astrophysics Data System (ADS)

Li, Yang; Wang, Tianmeng; Wu, Meng; Cao, Ting; Chen, Yanwen; Sankar, Raman; Ulaganathan, Rajesh K.; Chou, Fangcheng; Wetzel, Christian; Xu, Cheng-Yan; Louie, Steven G.; Shi, Su-Fei

2018-04-01

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ~239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ~154 meV/% for uniaxial tensile strain and ~140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in 2D materials. We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. The highly tunable bandgap of InSe in the infrared regime should enable a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.

Tight binding simulation study on zigzag single-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Sharma, Deepa; Jaggi, Neena; Gupta, Vishu

2018-01-01

Tight binding simulation studies using the density functional tight binding (DFTB) model have been performed on various zigzag single-walled carbon-nanotubes (SWCNTs) to investigate their electronic properties using DFTB module of the Material Studio Software version 7.0. Various combinations of different eigen-solvers and charge mixing schemes available in the DFTB Module have been tried to chalk out the electronic structure. The analytically deduced values of the bandgap of (9, 0) SWCNT were compared with the experimentally determined value reported in the literature. On comparison, it was found that the tight binding approximations tend to drastically underestimate the bandgap values. However, the combination of Anderson charge mixing method with standard eigensolver when implemented using the smart algorithm was found to produce fairly close results. These optimized model parameters were then used to determine the band structures of various zigzag SWCNTs. (9, 0) Single-walled Nanotube which is extensively being used for sensing NH3, CH4 and NO2 has been picked up as a reference material since its experimental bandgap value has been reported in the literature. It has been found to exhibit a finite energy bandgap in contrast to its expected metallic nature. The study is of utmost significance as it not only probes and validates the simulation route for predicting suitable properties of nanomaterials but also throws light on the comparative efficacy of the different approximation and rationalization quantum mechanical techniques used in simulation studies. Such simulation studies if used intelligently prove to be immensely useful to the material scientists as they not only save time and effort but also pave the way to new experiments by making valuable predictions.

Suppression of stimulated Brillouin scattering in all-solid chalcogenide-tellurite photonic bandgap fiber.

PubMed

Cheng, Tonglei; Liao, Meisong; Gao, Weiqing; Duan, Zhongchao; Suzuki, Takenobu; Ohishi, Yasutake

2012-12-17

A new way to suppress stimulated Brillouin scattering by using an all-solid chalcogenide-tellurite photonic bandgap fiber is presented in the paper. The compositions of the chalcogenide and the tellurite glass are As(2)Se(3) and TeO(2)-ZnO-Li(2)O-Bi(2)O(3). The light and the acoustic wave are confined in the fiber by photonic bandgap and acoustic bandgap mechanism, respectively. When the pump wavelength is within the photonic bandgap and the acoustic wave generated by the pump light is outside the acoustic bandgap, the interaction between the optical and the acoustic modes is very weak, thus stimulated Brillouin scattering is suppressed in the photonic bandgap fiber.

Tandem filters using frequency selective surfaces for enhanced conversion efficiency in a thermophotovoltaic energy conversion system

DOEpatents

Dziendziel, Randolph J [Middle Grove, NY; DePoy, David Moore [Clifton Park, NY; Baldasaro, Paul Francis [Clifton Park, NY

2007-01-23

This invention relates to the field of thermophotovoltaic (TPV) direct energy conversion. In particular, TPV systems use filters to minimize parasitic absorption of below bandgap energy. This invention constitutes a novel combination of front surface filters to increase TPV conversion efficiency by reflecting useless below bandgap energy while transmitting a very high percentage of the useful above bandgap energy. In particular, a frequency selective surface is used in combination with an interference filter. The frequency selective surface provides high transmission of above bandgap energy and high reflection of long wavelength below bandgap energy. The interference filter maintains high transmission of above bandgap energy and provides high reflection of short wavelength below bandgap energy and a sharp transition from high transmission to high reflection.

Tandem filters using frequency selective surfaces for enhanced conversion efficiency in a thermophotovoltaic energy conversion system

DOEpatents

Dziendziel, Randolph J [Middle Grove, NY; Baldasaro, Paul F [Clifton Park, NY; DePoy, David M [Clifton Park, NY

2010-09-07

This invention relates to the field of thermophotovoltaic (TPV) direct energy conversion. In particular, TPV systems use filters to minimize parasitic absorption of below bandgap energy. This invention constitutes a novel combination of front surface filters to increase TPV conversion efficiency by reflecting useless below bandgap energy while transmitting a very high percentage of the useful above bandgap energy. In particular, a frequency selective surface is used in combination with an interference filter. The frequency selective surface provides high transmission of above bandgap energy and high reflection of long wavelength below bandgap energy. The interference filter maintains high transmission of above bandgap energy and provides high reflection of short wavelength below bandgap energy and a sharp transition from high transmission to high reflection.

Merging mechanical and electromechanical bandgaps in locally resonant metamaterials and metastructures

NASA Astrophysics Data System (ADS)

Sugino, C.; Ruzzene, M.; Erturk, A.

2018-07-01

Locally resonant metamaterials are characterized by bandgaps at wavelengths much larger than the lattice size. Such locally resonant bandgaps can be formed using mechanical or electromechanical resonators. However, the nature of bandgap formation in mechanical and electromechanical (particularly piezoelectric) metamaterials is fundamentally different since the former is associated with a dynamic modal mass, while the latter is due to a dynamic modal stiffness. Next-generation metamaterials and resulting metastructures (i.e. finite configurations with specified boundary conditions) hosting mechanical resonators as well as piezoelectric interfaces connected to resonating circuits can enable the formation of two bandgaps, right above and below the design frequency of the mechanical and electrical resonators, respectively, yielding a wider bandgap and enhanced design flexibility as compared to using a purely mechanical, or a purely electromechanical configuration. In this work, we establish a fully coupled framework for hybrid mechanical-electromechanical metamaterials and finite metastructures. Combined bandgap size is approximated in closed form as a function of the added mass ratio of the resonators and the system-level electromechanical coupling for the infinite resonators approximation. Case studies are presented for a hybrid metamaterial cantilever under bending vibration to understand the interaction of these two locally resonant metamaterial domains in bandgap formation. Specifically, it is shown that the mechanical and electromechanical bandgaps do not fully merge for a finite number of resonators in an undamped setting. However, the presence of even light damping in the resonators suppresses the intermediate resonances emerging within the combined bandgap, enabling seamless merging of the two bandgaps in real-world structures that have damping. The overall concept of combining mechanical and electromechanical bandgaps in the same single metastructure can be leveraged in more complex topologies of piezoelectric metamaterial-based solids and structures.

Bloch-like waves in random-walk potentials based on supersymmetry

NASA Astrophysics Data System (ADS)

Yu, Sunkyu; Piao, Xianji; Hong, Jiho; Park, Namkyoo

2015-09-01

Bloch's theorem was a major milestone that established the principle of bandgaps in crystals. Although it was once believed that bandgaps could form only under conditions of periodicity and long-range correlations for Bloch's theorem, this restriction was disproven by the discoveries of amorphous media and quasicrystals. While network and liquid models have been suggested for the interpretation of Bloch-like waves in disordered media, these approaches based on searching for random networks with bandgaps have failed in the deterministic creation of bandgaps. Here we reveal a deterministic pathway to bandgaps in random-walk potentials by applying the notion of supersymmetry to the wave equation. Inspired by isospectrality, we follow a methodology in contrast to previous methods: we transform order into disorder while preserving bandgaps. Our approach enables the formation of bandgaps in extremely disordered potentials analogous to Brownian motion, and also allows the tuning of correlations while maintaining identical bandgaps, thereby creating a family of potentials with `Bloch-like eigenstates'.

Contact and Bandgap Engineering in Two Dimensional Crystal

NASA Astrophysics Data System (ADS)

Chu, Tao

At the heart of semiconductor research, bandgap is one of the key parameters for materials and determine their applications in modern technologies. For traditional bulk semiconductors, the bandgap is determined by the chemical composition and specific arrangement of the crystal lattices, and usually invariant during the device operation. Nevertheless, it is highly desirable for many optoelectronic and electronic applications to have materials with continuously tunable bandgap available. In the past decade, 2D layered materials including graphene and transition metal dichalcogenides (TMDs) have sparked interest in the scientific community, owing to their unique material properties and tremendous potential in various applications. Among many newly discovered properties that are non-existent in bulk materials, the strong in-plane bonding and weak van der Waals inter-planar interaction in these 2D layered structures leads to a widely tunable bandgap by electric field. This provides an extra knob to engineer the fundamental material properties and open a new design space for novel device operation. This thesis focuses on this field controlled dynamic bandgap and can be divided into three parts: (1) bilayer graphene is the first known 2D crystal with a bandgap can be continuously tuned by electric field. However, the electrical transport bandgaps is much smaller than both theoretical predictions and extracted bandgaps from optical measurements. In the first part of the thesis, the limiting factors of preventing achieving a large transport bandgap in bilayer graphene are investigated and different strategies to achieve a large transport bandgap are discussed, including the vertically scaling of gate oxide and patterning channel into ribbon structure. With a record large transport bandgap of ~200meV, a dual-gated semiconducting bilayer graphene P/N junction with extremely scaled gap of 20nm in-between is fabricated. A tunable local maxima feature, associated with 1D vHs DOS at the band edge of bilayer graphene, was experimentally observed in transport for the first time. (2) The bandgap of bilayer MoS2 is also predicted to be continuously tuned to zero by applying a perpendicular electric field. Here, the first experimental realization of tuning the bandgap of bilayer MoS2 by a vertical electric field is presented. An analytical approach utilizing the threshold voltages from ambipolar characteristics is employed to quantitatively extract bandgaps, which is further benchmarked by temperature dependent bandgap measurements and photoluminescence measurements. (3) Few layer graphene is employed as an example to demonstrate a novel self-aligned edge contacting scheme for layered material systems.

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Zhang, Zuocheng; Li, Likai; Horng, Jason; Wang, Nai Zhou; Yang, Fangyuan; Yu, Yijun; Zhang, Yu; Chen, Guorui; Watanabe, Kenji; Taniguchi, Takashi; Chen, Xian Hui; Wang, Feng; Zhang, Yuanbo

2017-10-01

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for opto-electronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the charge transport in black phosphorus at room temperature; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs). The effect opens up opportunities for future development of electro-mechanical transducers based on black phosphorus, and we demonstrate strain gauges constructed from black phosphorus thin crystals.

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors.

PubMed

Zhang, Zuocheng; Li, Likai; Horng, Jason; Wang, Nai Zhou; Yang, Fangyuan; Yu, Yijun; Zhang, Yu; Chen, Guorui; Watanabe, Kenji; Taniguchi, Takashi; Chen, Xian Hui; Wang, Feng; Zhang, Yuanbo

2017-10-11

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for optoelectronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the density of thermally activated carriers; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs) at room temperature. The effect opens up opportunities for future development of electromechanical transducers based on black phosphorus, and we demonstrate an ultrasensitive strain gauge constructed from black phosphorus thin crystals.

Study on sensing property of one-dimensional ring mirror-defect photonic crystal

NASA Astrophysics Data System (ADS)

Chen, Ying; Luo, Pei; Cao, Huiying; Zhao, Zhiyong; Zhu, Qiguang

2018-02-01

Based on the photon localization and the photonic bandgap characteristics of photonic crystals (PCs), one-dimensional (1D) ring mirror-defect photonic crystal structure is proposed. Due to the introduction of mirror structure, a defect cavity is formed in the center of the photonic crystal, and then the resonant transmission peak can be obtained in the bandgap of transmission spectrum. The transfer matrix method is used to establish the relationship model between the resonant transmission peak and the structure parameters of the photonic crystals. Using the rectangular air gate photonic crystal structure, the dynamic monitoring of the detected gas sample parameters can be achieved from the shift of the resonant transmission peak. The simulation results show that the Q-value can attain to 1739.48 and the sensitivity can attain to 1642 nm ṡ RIU-1, which demonstrates the effectiveness of the sensing structure. The structure can provide certain theoretical reference for air pollution monitoring and gas component analysis.

Investigation of angular dependence on photonic bandgap for 1-D photonic crystal

NASA Astrophysics Data System (ADS)

Nigam, Anjali; Suthar, B.; Bhargava, A.; Vijay, Y. K.

2018-05-01

In the present communication, we study the one-dimensional photonic crystal structure. The photonic band structure has been obtained using Plane Wave Expansion Method (PWEM). The studied has been extended to investigate the angular dependence on photonic bandgap for 1-D photonic crystal. The photonic bandgap is same both for TE and TM mode for normal incidence, while both mode move separate with an incidence angle. The photonic bandgap is almost unaffected with angle for TE mode while the bandgap decreases with an incidence angle for TM mode.

Energy level alignment and sub-bandgap charge generation in polymer:fullerene bulk heterojunction solar cells.

PubMed

Tsang, Sai-Wing; Chen, Song; So, Franky

2013-05-07

Using charge modulated electroabsorption spectroscopy (CMEAS), for the first time, the energy level alignment of a polymer:fullerene bulk heterojunction photovoltaic cell is directly measured. The charge-transfer excitons generated by the sub-bandgap optical pumping are coupled with the modulating electric field and introduce subtle changes in optical absorption in the sub-bandgap region. This minimum required energy for sub-bandgap charge genreation is defined as the effective bandgap. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrically dependent bandgaps in graphene on hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaplan, D., E-mail: daniel.b.kaplan.civ@mail.mil; Swaminathan, V.; Recine, G.

2014-03-31

We present first-principles calculations on the bandgap of graphene on a layer of hexagonal boron nitride in three different stacking configurations. Relative stability of the configurations is identified and bandgap tunability is demonstrated through the application of an external, perpendicularly applied electric field. We carefully examine the bandgap's sensitivity to both magnitude of the applied field as well as separation between the graphene and hexagonal boron nitride layers. Features of the band structure are examined and configuration-dependent relationships between the field and bandgap are revealed and elucidated through the atom-projected density of states. These findings suggest the potential for openingmore » and modulating a bandgap in graphene as high as several hundred meV.« less

Gap-state engineering of visible-light-active ferroelectrics for photovoltaic applications.

PubMed

Matsuo, Hiroki; Noguchi, Yuji; Miyayama, Masaru

2017-08-08

Photoferroelectrics offer unique opportunities to explore light energy conversion based on their polarization-driven carrier separation and above-bandgap voltages. The problem associated with the wide bandgap of ferroelectric oxides, i.e., the vanishingly small photoresponse under visible light, has been overcome partly by bandgap tuning, but the narrowing of the bandgap is, in principle, accompanied by a substantial loss of ferroelectric polarization. In this article, we report an approach, 'gap-state' engineering, to produce photoferroelectrics, in which defect states within the bandgap act as a scaffold for photogeneration. Our first-principles calculations and single-domain thin-film experiments of BiFeO 3 demonstrate that gap states half-filled with electrons can enhance not only photocurrents but also photovoltages over a broad photon-energy range that is different from intermediate bands in present semiconductor-based solar cells. Our approach opens a promising route to the material design of visible-light-active ferroelectrics without sacrificing spontaneous polarization.Overcoming the optical transparency of wide bandgap of ferroelectric oxides by narrowing its bandgap tends to result in a loss of polarization. By utilizing defect states within the bandgap, Matsuo et al. report visible-light-active ferroelectrics without sacrificing polarization.

Bandgaps and directional propagation of elastic waves in 2D square zigzag lattice structures

NASA Astrophysics Data System (ADS)

Wang, Yan-Feng; Wang, Yue-Sheng; Zhang, Chuanzeng

2014-12-01

In this paper we propose various types of two-dimensional (2D) square zigzag lattice structures, and we study their bandgaps and directional propagation of elastic waves. The band structures and the transmission spectra of the systems are calculated by using the finite element method. The effects of the geometry parameters of the 2D-zigzag lattices on the bandgaps are investigated and discussed. The mechanism of the bandgap generation is analyzed by studying the vibration modes at the bandgap edges. Multiple wide complete bandgaps are found in a wide porosity range owing to the separation of the degeneracy by introducing bending arms. The bandgaps are sensitive to the geometry parameters of the systems. The deformed displacement fields of the transient response of finite structures subjected to time-harmonic loads are presented to show the directional wave propagation. The research in this paper is relevant to the practical design of cellular structures with enhanced vibro-acoustics performance.

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

NASA Astrophysics Data System (ADS)

Yan, Shi-Li; Xie, Zhi-Jian; Chen, Jian-Hao; Taniguchi, Takashi; Watanabe, Kenji

2017-03-01

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10V/nm to 0.83V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronics, thermoelectric power generation and thermal imaging.

High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

DOEpatents

Wanlass, Mark W [Golden, CO

2011-11-29

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

High-efficiency, monolithic, multi-bandgap, tandem, photovoltaic energy converters

DOEpatents

Wanlass, Mark W

2014-05-27

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

Quantum spin Hall effect and topological phase transition in InN x Bi y Sb1-x-y /InSb quantum wells

NASA Astrophysics Data System (ADS)

Song, Zhigang; Bose, Sumanta; Fan, Weijun; Zhang, Dao Hua; Zhang, Yan Yang; Shen Li, Shu

2017-07-01

Quantum spin Hall (QSH) effect, a fundamentally new quantum state of matter and topological phase transitions are characteristics of a kind of electronic material, popularly referred to as topological insulators (TIs). TIs are similar to ordinary insulator in terms of their bulk bandgap, but have gapless conducting edge-states that are topologically protected. These edge-states are facilitated by the time-reversal symmetry and they are robust against nonmagnetic impurity scattering. Recently, the quest for new materials exhibiting non-trivial topological state of matter has been of great research interest, as TIs find applications in new electronics and spintronics and quantum-computing devices. Here, we propose and demonstrate as a proof-of-concept that QSH effect and topological phase transitions can be realized in {{InN}}x{{Bi}}y{{Sb}}1-x-y/InSb semiconductor quantum wells (QWs). The simultaneous incorporation of nitrogen and bismuth in InSb is instrumental in lowering the bandgap, while inducing opposite kinds of strain to attain a near-lattice-matching conducive for lattice growth. Phase diagram for bandgap shows that as we increase the QW thickness, at a critical thickness, the electronic bandstructure switches from a normal to an inverted type. We confirm that such transition are topological phase transitions between a traditional insulator and a TI exhibiting QSH effect—by demonstrating the topologically protected edge-states using the bandstructure, edge-localized distribution of the wavefunctions and edge-state spin-momentum locking phenomenon, presence of non-zero conductance in spite of the Fermi energy lying in the bandgap window, crossover points of Landau levels in the zero-mode indicating topological band inversion in the absence of any magnetic field and presence of large Rashba spin-splitting, which is essential for spin-manipulation in TIs.

Protected, back-illuminated silicon photocathodes or photoanodes for water splitting tandem stacks (Conference Presentation)

NASA Astrophysics Data System (ADS)

Vesborg, Peter C.; Bae, Dowon; Seger, Brian J.; Chorkendorff, Ib; Hansen, Ole; Pedersen, Thomas; Mei, Bastian; Frydendal, Rasmus

2016-10-01

Silicon is a promising contender in the race for low-bandgap absorbers for use in a solar driven monolithic water splitting cell (PEC). However, given its role as the low-bandgap material the silicon must sit behind the corresponding high-bandgap material and as such, it will be exposed to (red) light from the dry back-side - not from the wet front side, where the electrochemistry takes place.[1,2] Depending on the configuration of the selective contacts (junctions) this may lead to compromises between high absorption and low recombination.[2,3] We discuss the tradeoffs and compare modeling results to measurements. Regardless of configuration, the wet surface of the silicon is prone to passivation or corrosion and must therefore be carefully protected in service in order to remain active. We demonstrate the use of TiO2 as an effective protection layer for both photoanodes and photocathodes in acid electrolyte [4] and NiCoOx for photoanodes in alkaline electrolyte. [3] References: [1]: B. Seger et alia, Energ. Environ. Sci., 7 (8), 2397-2413 (2014), DOI:10.1039/c4ee01335b [2]: D. Bae et alia, Energ. Environ. Sci., 8 (2), 650-660 (2015), DOI: 10.1039/c4ee03723e [3]: D. Bae et alia, submitted, (2016) [4]: B. Mei et alia, J. Phys. Chem. C., 119 (27), 15019-15027 (2015), DOI: 10.1021/acs.jpcc.5b04407

Ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires probed by terahertz spectroscopy

NASA Astrophysics Data System (ADS)

Liu, Hongwei; Lu, Junpeng; Yang, Zongyin; Teng, Jinghua; Ke, Lin; Zhang, Xinhai; Tong, Limin; Sow, Chorng Haur

2016-06-01

Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdSxSe1-x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices.

Transparent contacts for stacked compound photovoltaic cells

DOEpatents

Tauke-Pedretti, Anna; Cederberg, Jeffrey; Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis

2016-11-29

A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.

Efficient CsF interlayer for high and low bandgap polymer solar cell

NASA Astrophysics Data System (ADS)

Mitul, Abu Farzan; Sarker, Jith; Adhikari, Nirmal; Mohammad, Lal; Wang, Qi; Khatiwada, Devendra; Qiao, Qiquan

2018-02-01

Low bandgap polymer solar cells have a great deal of importance in flexible photovoltaic market to absorb sun light more efficiently. Efficient wide bandgap solar cells are always available in nature to absorb visible photons. The development and incorporation of infrared photovoltaics (IR PV) with wide bandgap solar cells can improve overall solar device performance. Here, we have developed an efficient low bandgap polymer solar cell with CsF as interfacial layer in regular structure. Polymer solar cell devices with CsF shows enhanced performance than Ca as interfacial layer. The power conversion efficiency of 4.5% has been obtained for PDPP3T based polymer solar cell with CsF as interlayer. Finally, an optimal thickness with CsF as interfacial layer has been found to improve the efficiency in low bandgap polymer solar cells.

A comparative density functional study on electrical properties of layered penta-graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Zhi Gen, E-mail: yuzg@ihpc.a-star.edu.sg; Zhang, Yong-Wei, E-mail: zhangyw@ihpc.a-star.edu.sg

We present a comparative study of the influence of the number of layers, the biaxial strain in the range of −3% to 3%, and the stacking misalignments on the electronic properties of a new 2D carbon allotrope, penta-graphene (PG), based on hybrid-functional method within the density functional theory (DFT). In comparison with local exchange-correlation approximation in the DFT, the hybrid-functional provides an accurate description on the degree of p{sub z} orbitals localization and bandgap. Importantly, the predicted bandgap of few-layer PG has a weak layer dependence. The bandgap of monolayer PG is 3.27 eV, approximately equal to those of GaN andmore » ZnO; and the bandgap of few-layer PG decreases slowly with the number of layers (N) and converge to 2.57 eV when N ≥ 4. Our calculations using HSE06 functional on few-layer PG reveal that bandgap engineering by stacking misalignment can further tune the bandgap down to 1.37 eV. Importantly, there is no direct-to-indirect bandgap transition in PG by varying strain, layer number, and stacking misalignment. Owing to its tunable, robustly direct, and wide bandgap characteristics, few-layer PG is promising for optoelectronic and photovoltaic applications.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jana, Dipankar, E-mail: dip2602@gmail.com; Porwal, S.; Sharma, T. K., E-mail: tarun@rrcat.gov.in

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pumpmore » beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates.« less

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers.

PubMed

Jana, Dipankar; Porwal, S; Sharma, T K; Kumar, Shailendra; Oak, S M

2014-04-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates.

Method of fabricating bifacial tandem solar cells

DOEpatents

Wojtczuk, Steven J; Chiu, Philip T; Zhang, Xuebing; Gagnon, Edward; Timmons, Michael

2014-10-07

A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.

Bifacial tandem solar cells

DOEpatents

Wojtczuk, Steven J.; Chiu, Philip T.; Zhang, Xuebing; Gagnon, Edward; Timmons, Michael

2016-06-14

A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.

Bandgap tuning and enhancement of seebeck coefficient in one dimensional GeSe

NASA Astrophysics Data System (ADS)

Kagdada, Hardik L.; Dabhi, Shweta D.; Jha, Prafulla K.

2018-04-01

The first principles based density functional theory is used for tuning the electronic bandgap and thermoelectric properties of bulk, two dimensional (2D) and one dimensional (1D) GeSe. There is an increase in the bandgap going from bulk to 1D with indirect to direct bandgap transition. There is a dramatic change in Seebeck coefficient (S) for GeSe going from bulk to 1D at 300 K. The electrical conductivity and electronic thermal conductivity are lower for 1D GeSe compared to the bulk GeSe due to larger bandgap in the case of 1D GeSe.

Theoretical research on bandgap of H-saturated Ga1-xAlxN nanowires

NASA Astrophysics Data System (ADS)

Xia, Sihao; Liu, Lei; Kong, Yike; Wang, Honggang; Wang, Meishan

2017-01-01

Based on first-principles plane-wave ultra-soft pseudopotential method, bandgaps of Ga1-xAlxN nanowires with different diameters and different Al constituents are calculated. After the optimization of the model, the bandgaps are achieved. According to the results, the bandgap of Ga1-xAlxN decreases with increasing diameter and finally, closed to that of the bulk. In addition, with increasing Al constituent, the bandgaps of Ga1-xAlxN nanowires increase. However, the amount of the increase is lower than that of the bulk Ga1-xAlxN with the increase of Al constituent.

Ultrawide bandgap pentamode metamaterials with an asymmetric double-cone outside profile

NASA Astrophysics Data System (ADS)

Chu, Yangyang; Li, Yucheng; Cai, Chengxin; Liu, Guangshuan; Wang, Zhaohong; Xu, Zhuo

2018-03-01

The band-gap characteristic is an important feature of acoustic metamaterials, which has important theoretical and practical significance in acoustic devices. Pentamode metamaterials (PMs) with phonon band-gap characteristics based on an asymmetric double-cone outside profile are presented and studied in this paper. The phonon band structures of these PMs are calculated by using the finite element method. In addition to the single-mode band-gaps, the complete 3D band-gaps are also obtained by changing the outside profile of the double-cone. Moreover, by adjusting the outside profile and the diameter of the double-cone to reduce the symmetry of the structure, the complete 3D band-gap can be widened. Further parametric analysis is presented to investigate the effect of geometrical parameters on the phonon band-gap property, the numerical simulations show that the maximum relative bandwidth is expanded by 15.14 times through reducing the symmetry of the structure. This study provides a possible way for PMs to control elastic wave propagation in the field of depressing vibration and noise, acoustic filtering and acoustic cloaking.

Bandgaps and directional properties of two-dimensional square beam-like zigzag lattices

NASA Astrophysics Data System (ADS)

Wang, Yan-Feng; Wang, Yue-Sheng; Zhang, Chuanzeng

2014-12-01

In this paper we propose four kinds of two-dimensional square beam-like zigzag lattice structures and study their bandgaps and directional propagation of elastic waves. The band structures are calculated by using the finite element method. Both the in-plane and out-of-plane waves are investigated simultaneously via the three-dimensional Euler beam elements. The mechanism of the bandgap generation is analyzed by studying the vibration modes at the bandgap edges. The effects of the geometry parameters of the xy- and z-zigzag lattices on the bandgaps are investigated and discussed. Multiple complete bandgaps are found owing to the separation of the degeneracy by introducing bending arms. The bandgaps are sensitive to the geometry parameters of the periodic systems. The deformed displacement fields of the harmonic responses of a finite lattice structure subjected to harmonic loads at different positions are illustrated to show the directional wave propagation. An extension of the proposed concept to the hexagonal lattices is also presented. The research work in this paper is relevant to the practical design of cellular structures with enhanced vibro-acoustics performance.

Bandgap Inhomogeneity of a PbSe Quantum Dot Ensemble from Two-Dimensional Spectroscopy and Comparison to Size Inhomogeneity from Electron Microscopy

DOE PAGES

Park, Samuel D.; Baranov, Dmitry; Ryu, Jisu; ...

2017-01-03

Femtosecond two-dimensional Fourier transform spectroscopy is used to determine the static bandgap inhomogeneity of a colloidal quantum dot ensemble. The excited states of quantum dots absorb light, so their absorptive two-dimensional (2D) spectra will typically have positive and negative peaks. We show that the absorption bandgap inhomogeneity is robustly determined by the slope of the nodal line separating positive and negative peaks in the 2D spectrum around the bandgap transition; this nodal line slope is independent of excited state parameters not known from the absorption and emission spectra. The absorption bandgap inhomogeneity is compared to a size and shape distributionmore » determined by electron microscopy. The electron microscopy images are analyzed using new 2D histograms that correlate major and minor image projections to reveal elongated nanocrystals, a conclusion supported by grazing incidence small-angle X-ray scattering and high-resolution transmission electron microscopy. Lastly, the absorption bandgap inhomogeneity quantitatively agrees with the bandgap variations calculated from the size and shape distribution, placing upper bounds on any surface contributions.« less

Review of betavoltaic energy conversion

NASA Astrophysics Data System (ADS)

Olsen, Larry C.

1993-05-01

Betavoltaic energy conversion refers to the generation of power by coupling a beta source to a semiconductor junction device. The theory of betavoltaic energy conversion and some past studies of the subject are briefly reviewed. Calculations of limiting efficiencies for semiconductor cells versus bandgap are presented along with specific studies for Pm-147 and Ni-63 fueled devices. The approach used for fabricating Pm-147 fueled batteries by the author in the early 1970's is reviewed. Finally, the potential performance of advanced betavoltaic power sources is considered.

Review of betavoltaic energy conversion

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1993-01-01

Betavoltaic energy conversion refers to the generation of power by coupling a beta source to a semiconductor junction device. The theory of betavoltaic energy conversion and some past studies of the subject are briefly reviewed. Calculations of limiting efficiencies for semiconductor cells versus bandgap are presented along with specific studies for Pm-147 and Ni-63 fueled devices. The approach used for fabricating Pm-147 fueled batteries by the author in the early 1970's is reviewed. Finally, the potential performance of advanced betavoltaic power sources is considered.

Bandgap Optimization of Perovskite Semiconductors for Photovoltaic Applications.

PubMed

Xiao, Zewen; Zhou, Yuanyuan; Hosono, Hideo; Kamiya, Toshio; Padture, Nitin P

2018-02-16

The bandgap is the most important physical property that determines the potential of semiconductors for photovoltaic (PV) applications. This Minireview discusses the parameters affecting the bandgap of perovskite semiconductors that are being widely studied for PV applications, and the recent progress in the optimization of the bandgaps of these materials. Perspectives are also provided for guiding future research in this area. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bandgap profiling in CIGS solar cells via valence electron energy-loss spectroscopy

NASA Astrophysics Data System (ADS)

Deitz, Julia I.; Karki, Shankar; Marsillac, Sylvain X.; Grassman, Tyler J.; McComb, David W.

2018-03-01

A robust, reproducible method for the extraction of relative bandgap trends from scanning transmission electron microscopy (STEM) based electron energy-loss spectroscopy (EELS) is described. The effectiveness of the approach is demonstrated by profiling the bandgap through a CuIn1-xGaxSe2 solar cell that possesses intentional Ga/(In + Ga) composition variation. The EELS-determined bandgap profile is compared to the nominal profile calculated from compositional data collected via STEM-based energy dispersive X-ray spectroscopy. The EELS based profile is found to closely track the calculated bandgap trends, with only a small, fixed offset difference. This method, which is particularly advantageous for relatively narrow bandgap materials and/or STEM systems with modest resolution capabilities (i.e., >100 meV), compromises absolute accuracy to provide a straightforward route for the correlation of local electronic structure trends with nanoscale chemical and physical structure/microstructure within semiconductor materials and devices.

Use of chemical-mechanical polishing for fabricating photonic bandgap structures

DOEpatents

Fleming, James G.; Lin, Shawn-Yu; Hetherington, Dale L.; Smith, Bradley K.

1999-01-01

A method is disclosed for fabricating a two- or three-dimensional photonic bandgap structure (also termed a photonic crystal, photonic lattice, or photonic dielectric structure). The method uses microelectronic integrated circuit (IC) processes to fabricate the photonic bandgap structure directly upon a silicon substrate. One or more layers of arrayed elements used to form the structure are deposited and patterned, with chemical-mechanical polishing being used to planarize each layer for uniformity and a precise vertical tolerancing of the layer. The use of chemical-mechanical planarization allows the photonic bandgap structure to be formed over a large area with a layer uniformity of about two-percent. Air-gap photonic bandgap structures can also be formed by removing a spacer material separating the arrayed elements by selective etching. The method is useful for fabricating photonic bandgap structures including Fabry-Perot resonators and optical filters for use at wavelengths in the range of about 0.2-20 .mu.m.

Tree planters` notes, Volume 46, Number 1, Winter 1995

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nisley, R.

1995-12-31

;Contents: Will We Run Out of Wood in the South; Effectiveness of Big Game Repellent - Powder(R) (BGR-P) and Garlic in Inhibiting Browsing of Western Redclear by Black-Tailed Deer; Germinant Sowing in South Africa; A New Greenhouse Photoperiod Lighting System for Prevention of Seedling Dormancy; Nitrogen Fertilization Requirements of Douglas-fir Container Seedlings Vary by Seed Source; Legume Seeding Trials in a Forested Area of North-Central Washington; and Survival and Growth of Planted Loblolly Pine Seedlings on a Severely Rutted Site.

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.

2016-01-05

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.

2014-07-08

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.

2016-03-22

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Hybrid density functional study of bandgaps for 27 new proposed half-Heusler semiconductors

NASA Astrophysics Data System (ADS)

Shi, Fangyi; Si, M. S.; Xie, Jiafeng; Mi, Kui; Xiao, Chuntao; Luo, Qiangjun

2017-12-01

Recently, 27 new half-Heusler compounds XYZ (X = Co, Rh, Fe, Ru, Ni; Y = Sc, Ti, V; Z = P, As, Sb, Si, Ge, Sn, Al, Ga, In) with 18 valence electrons are proposed and their bandgaps span a wide range of 0.10-1.39 eV, which have a great potential of applications in varied areas. Note that the bandgaps are predicted on the gradient-corrected Perdew-Burke-Ernzerhof functional, which underestimates the magnitude of bandgap. To obtain the accurate bandgaps, we recalculate them based on the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional. Our results show that the nonlocal correction from the HSE06 functional mainly acts on the two lowest conduction bands. The variation in energy separation between these two bands dominates the relative increment of bandgap. More importantly, the band ordering is distinguished in the presence of HSE06 functional, where the dz2 orbital exhibits. When the lattice constant varies, such a band ordering can be inverted, similar to the case of topological insulators. In addition, we find an abnormal behavior of the bandgap related to the Pauling electronegativity difference between the X- and Z-sites, which arises from the delocalization of charge on the Y-site. We expect that our work can provide guidance to the study of bandgap based on the hybrid density functional theory in the half-Heusler semiconductors.

Tunable bandgaps in a deployable metamaterial

NASA Astrophysics Data System (ADS)

Nanda, Aditya; Karami, M. Amin

2018-03-01

In this manuscript, we envision deployable structures (such as solar arrays) and origami-inspired foldable structures as metamaterials capable of tunable wave manipulation. Specifically, we present a metamaterial whose bandgaps can be modulated by changing the fold angle of adjacent panels. The repeating unit cell of the structure consists of a beam (representing a panel) and a torsional spring (representing the folding mechanism). Two important cases are considered. Firstly, the fold angle (angle between adjacent beams), Ψ, is zero and only flexural waves propagate. In the second case, the fold angle is greater than zero (Ψ > 0). This causes longitudinal and transverse vibration to be coupled. FEM models are used to validate both these analyses. Increasing the fold angle was found to inflict profound changes to the wave transmission characteristics of the structure. In general, increasing the fold angles caused the bandwidth of bandgaps to increase significantly. For the lowest four bandgaps we found bandwidth increases of 252 %, 177 %, 230 % and 163 % respectively at Ψ = 90 deg (relative to the bandwidths at Ψ = 0). In addition, significant increase in bandwidth of the odd-numbered bandgaps occurs even at small fold angles- the bandwidth for the first and third bandgaps effectively double in size (increase by 100%) at Ψ = 20 deg relative to those at Ψ = 0. This has important ramifications in the context of tunable wave manipulation and adaptive filtering. In addition, by expanding out the characteristic equation of transfer matrix for the straight structure, we prove that the upper band edge of the nth bandgap will always equal the nth simply supported natural frequency of the constituent beam. Further, we found that the ratio (EI/kt) is an important parameter affecting the bandwidth of bandgaps. For low values of the ratio, effectively, no bandgap exists. For higher values of the ratio (EI/kt), we obtain a relatively large bandgap over which no waves propagate. This can have important ramifications for the design of foldable structures. As an alternative to impedance-based structural health monitoring, these insights can aid in health monitoring of deployable structures by tracking the bandwidth of bandgaps which can provide important clues about the mechanical parameters of the structure.

Tunable bandgaps in a deployable metamaterial

NASA Astrophysics Data System (ADS)

Nanda, Aditya; Karami, M. A.

2018-06-01

In this manuscript, we investigate deployable structures (such as solar arrays) and origami-inspired foldable structures as metamaterials capable of tunable wave manipulation. Specifically, we present a metamaterial whose bandgaps can be modulated by changing the fold angle of adjacent panels. The repeating unit cell of the structure consists of a beam (representing a panel) and a torsional spring (representing the folding mechanism). Two important cases are considered. Firstly, the fold angle (angle between adjacent beams), Ψ, is zero and only flexural waves propagate. In the second case, the fold angle is greater than zero (Ψ > 0). This causes longitudinal and transverse vibration to be coupled. FEM models are used to validate both these analyses. Increasing the fold angle was found to inflict notable changes to the wave transmission characteristics of the structure. In general, increasing the fold angles caused the bandwidth of bandgaps to increase. For the lowest four bandgaps we found bandwidth increases of 252 %, 177 %, 230 % and 163 % respectively at Ψ = 90 deg (relative to the bandwidths at Ψ = 0). In addition, non-trivial increases in bandwidth of the odd-numbered bandgaps occurs even at small fold angles-the bandwidth for the first and third bandgaps effectively double in size (increase by 100 %) at Ψ = 20 deg relative to those at Ψ = 0. This could have ramifications in the context of tunable wave manipulation and adaptive filtering. In addition, by expanding out the characteristic equation of transfer matrix for the straight structure, we prove that the upper band edge of the nth bandgap will always equal the nth simply supported natural frequency of the constituent beam. Further, we found that the ratio (EI/kt) is a pertinent parameter affecting the bandwidth of bandgaps. For low values of the ratio, effectively, no bandgap exists. For higher values of the ratio (EI/kt), we obtain a relatively large bandgap over which no waves propagate. This can have ramifications for the design of foldable structures. As an alternative to impedance-based structural health monitoring, these insights can aid in health monitoring of deployable structures by tracking the bandwidth of bandgaps which can provide clues about the mechanical parameters of the structure.

High performance, high bandgap, lattice-mismatched, GaInP solar cells

DOEpatents

Wanlass, Mark W; Carapella, Jeffrey J; Steiner, Myles A

2016-11-01

High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

High performance, high bandgap, lattice-mismatched, GaInP solar cells

DOEpatents

Wanlass, Mark W.; Carapella, Jeffrey J.; Steiner, Myles A.

2014-07-08

High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintainingmore » high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.« less

Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Pei; Zaslavsky, Alexander; Longo, Paolo

2016-01-07

Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Taucmore » and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO{sub 2} superlattices with single and multiple a-Ge layers down to 2 nm thickness.« less

Effect of temperature on terahertz photonic and omnidirectional band gaps in one-dimensional quasi-periodic photonic crystals composed of semiconductor InSb.

PubMed

Singh, Bipin K; Pandey, Praveen C

2016-07-20

Engineering of thermally tunable terahertz photonic and omnidirectional bandgaps has been demonstrated theoretically in one-dimensional quasi-periodic photonic crystals (PCs) containing semiconductor and dielectric materials. The considered quasi-periodic structures are taken in the form of Fibonacci, Thue-Morse, and double periodic sequences. We have shown that the photonic and omnidirectional bandgaps in the quasi-periodic structures with semiconductor constituents are strongly depend on the temperature, thickness of the constituted semiconductor and dielectric material layers, and generations of the quasi-periodic sequences. It has been found that the number of photonic bandgaps increases with layer thickness and generation of the quasi-periodic sequences. Omnidirectional bandgaps in the structures have also been obtained. Results show that the bandwidths of photonic and omnidirectional bandgaps are tunable by changing the temperature and lattice parameters of the structures. The generation of quasi-periodic sequences can also change the properties of photonic and omnidirectional bandgaps remarkably. The frequency range of the photonic and omnidirectional bandgaps can be tuned by the change of temperature and layer thickness of the considered quasi-periodic structures. This work will be useful to design tunable terahertz PC devices.

Polaron effect on the bandgap modulation in monolayer transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Xiao, Yao; Li, Zhi-Qing; Wang, Zi-Wu

2017-12-01

We theoretically study the bandgap modulation in monolayer transition metal dichalcogenides (TMDs) originating from the carrier-optical phonon coupling in the Fröhlich polaron model, in which both of the surface optical phonons modes induced by the polar substrate and the intrinsic longitudinal optical phonons modes have been taken into account. We find that the modulated magnitude of the bandgap is in the range of 100-500 meV by altering different polar substrates and tuning the internal distance between TMDs and polar substrate. The large tunability of the bandgap not only provides a possible explanation for the experimental measurements regarding the dielectric environmental sensitivity of the bandgap, but also holds promise for potential applications in optoelectronics and photovoltaics.

Bandgap tuning in highly c-axis oriented Zn1-xMgxO thin films

NASA Astrophysics Data System (ADS)

Kumar, Parmod; Malik, Hitendra K.; Ghosh, Anima; Thangavel, R.; Asokan, K.

2013-06-01

We propose Mg doping in zinc oxide (ZnO) films for realizing wider optical bandgap in highly c-axis oriented Zn1-xMgxO (0 ≤ x ≤ 0.3) thin films. A remarkable enhancement of 25% in the bandgap by 30% Mg doping was achieved. The bandgap was tuned between 3.25 eV (ZnO) and 4.06 eV (Zn0.7Mg0.3O), which was further confirmed by density functional theory based wien2k simulation employing a combined generalized gradient approximation with scissor corrections. The change of stress and crystallite size in these films were found to be the causes for the observed blueshift in the bandgap.

Research on bandgaps in two-dimensional phononic crystal with two resonators.

PubMed

Gao, Nansha; Wu, Jiu Hui; Yu, Lie

2015-02-01

In this paper, the bandgap properties of a two-dimensional phononic crystal with the two resonators is studied and embedded in a homogenous matrix. The resonators are not connected with the matrix but linked with connectors directly. The dispersion relationship, transmission spectra, and displacement fields of the eigenmodes of this phononic crystal are studied with finite-element method. In contrast to the phononic crystals with one resonators and hollow structure, the proposed structures with two resonators can open bandgaps at lower frequencies. This is a very interesting and useful phenomenon. Results show that, the opening of the bandgaps is because of the local resonance and the scattering interaction between two resonators and matrix. An equivalent spring-pendulum model can be developed in order to evaluate the frequencies of the bandgap edge. The study in this paper is beneficial to the design of opening and tuning bandgaps in phononic crystals and isolators in low-frequency range. Copyright © 2014 Elsevier B.V. All rights reserved.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, R.J.; Osbourn, G.C.

1983-07-08

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

Quantum well multijunction photovoltaic cell

DOEpatents

Chaffin, Roger J.; Osbourn, Gordon C.

1987-01-01

A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising a p-region on one side and an n-region on the other side, each of which regions comprises a series of at least three semiconductor layers, all p-type in the p-region and all n-type in the n-region; each of said series of layers comprising alternating barrier and quantum well layers, each barrier layer comprising a semiconductor material having a first bandgap and each quantum well layer comprising a semiconductor material having a second bandgap when in bulk thickness which is narrower than said first bandgap, the barrier layers sandwiching each quantum well layer and each quantum well layer being sufficiently thin that the width of its bandgap is between said first and second bandgaps, such that radiation incident on said cell and above an energy determined by the bandgap of the quantum well layers will be absorbed and will produce an electrical potential across said junction.

The Role of FRET in Non-Fullerene Organic Solar Cells: Implications for Molecular Design.

PubMed

Gautam, Bhoj R; Younts, Robert; Carpenter, Joshua; Ade, Harald; Gundogdu, Kenan

2018-04-19

Non-fullerene acceptors (NFAs) have been demonstrated to be promising candidates for highly efficient organic photovoltaic (OPV) devices. The tunability of absorption characteristics of NFAs can be used to make OPVs with complementary donor-acceptor absorption to cover a broad range of the solar spectrum. However, both charge transfer from donor to acceptor moieties and energy (energy) transfer from high-bandgap to low-bandgap materials are possible in such structures. Here, we show that when charge transfer and exciton transfer processes are both present, the coexistence of excitons in both domains can cause a loss mechanism. Charge separation of excitons in a low-bandgap material is hindered due to exciton population in the larger bandgap acceptor domains. Our results further show that excitons in low-bandgap material should have a relatively long lifetime compared to the transfer time of excitons from higher bandgap material in order to contribute to the charge separation. These observations provide significant guidance for design and development of new materials in OPV applications.

Quantum Transport and Non-Hermiticity on Flat-Band Lattices

NASA Astrophysics Data System (ADS)

Park, Hee Chul; Ryu, Jung-Wan; Myoung, Nojoon

2018-04-01

We investigate quantum transport in a flat-band lattice induced in a twisted cross-stitch lattice with Hermitian or non-Hermitian potentials, with a combination of parity and time-reversal symmetry invariant. In the given system, the transmission probability demonstrates a resonant behavior on the real part of the energy bands. Both of the potentials break the parity symmetry, which lifts the degeneracy of the flat and dispersive bands. In addition, non-Hermiticity conserving PT-symmetry induces a transition between the unbroken and broken PT-symmetric phases through exceptional points in momentum space. Characteristics of non-Hermitian and Hermitian bandgaps are distinguishable: The non-Hermitian bandgap is induced by separation toward complex energy, while the Hermitian bandgap is caused by the expelling of available states into real energy. Deviation of the two bandgaps follows as a function of the quartic power of the induced potential. It is notable that non-Hermiticity plays an important role in the mechanism of generating a bandgap distinguishable from a Hermitian bandgap.

Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katahara, John K.; Hillhouse, Hugh W., E-mail: h2@uw.edu

A unified model for the direct gap absorption coefficient (band-edge and sub-bandgap) is developed that encompasses the functional forms of the Urbach, Thomas-Fermi, screened Thomas-Fermi, and Franz-Keldysh models of sub-bandgap absorption as specific cases. We combine this model of absorption with an occupation-corrected non-equilibrium Planck law for the spontaneous emission of photons to yield a model of photoluminescence (PL) with broad applicability to band-band photoluminescence from intrinsic, heavily doped, and strongly compensated semiconductors. The utility of the model is that it is amenable to full-spectrum fitting of absolute intensity PL data and yields: (1) the quasi-Fermi level splitting, (2) themore » local lattice temperature, (3) the direct bandgap, (4) the functional form of the sub-bandgap absorption, and (5) the energy broadening parameter (Urbach energy, magnitude of potential fluctuations, etc.). The accuracy of the model is demonstrated by fitting the room temperature PL spectrum of GaAs. It is then applied to Cu(In,Ga)(S,Se){sub 2} (CIGSSe) and Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) to reveal the nature of their tail states. For GaAs, the model fit is excellent, and fitted parameters match literature values for the bandgap (1.42 eV), functional form of the sub-bandgap states (purely Urbach in nature), and energy broadening parameter (Urbach energy of 9.4 meV). For CIGSSe and CZTSSe, the model fits yield quasi-Fermi leveling splittings that match well with the open circuit voltages measured on devices made from the same materials and bandgaps that match well with those extracted from EQE measurements on the devices. The power of the exponential decay of the absorption coefficient into the bandgap is found to be in the range of 1.2 to 1.6, suggesting that tunneling in the presence of local electrostatic potential fluctuations is a dominant factor contributing to the sub-bandgap absorption by either purely electrostatic (screened Thomas-Fermi) or a photon-assisted tunneling mechanism (Franz-Keldysh). A Gaussian distribution of bandgaps (local E{sub g} fluctuation) is found to be inconsistent with the data. The sub-bandgap absorption of the CZTSSe absorber is found to be larger than that for CIGSSe for materials that yield roughly equivalent photovoltaic devices (8% efficient). Further, it is shown that fitting only portions of the PL spectrum (e.g., low energy for energy broadening parameter and high energy for quasi-Fermi level splitting) may lead to significant errors for materials with substantial sub-bandgap absorption and emission.« less

Development of high-bandgap AlGaInP solar cells grown by organometallic vapor-phase epitaxy

DOE PAGES

Perl, Emmett E.; Simon, John; Geisz, John F.; ...

2016-03-29

AlGaInP solar cells with bandgaps between 1.9 and 2.2 eV are investigated for use in next-generation multijunction photovoltaic devices. This quaternary alloy is of great importance to the development of III-V solar cells with five or more junctions and for cells optimized for operation at elevated temperatures because of the high bandgaps required in these designs. In this work, we explore the conditions for the organometallic vapor-phase epitaxy growth of AlGaInP and study their effects on cell performance. Initial efforts focused on developing ~2.0-eV AlGaInP solar cells with a nominal aluminum composition of 12%. Under the direct spectrum at 1000more » W/m 2 (AM1.5D), the best of these samples had an open-circuit voltage of 1.59 V, a bandgap-voltage offset of 440 mV, a fill factor of 88.0%, and an efficiency of 14.8%. We then varied the aluminum composition of the alloy from 0% to 24% and were able to tune the bandgap of the AlGaInP layers from ~1.9 to ~2.2 eV. Furthermore, while the samples with a higher aluminum composition exhibited a reduced quantum efficiency and increased bandgap-voltage offset, the bandgap-voltage offset remained at 500 mV or less, up to a bandgap of ~2.1 eV.« less

Effect of multilayer structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide.

PubMed

Chen, Xianping; Tan, Chunjian; Yang, Qun; Meng, Ruishen; Liang, Qiuhua; Jiang, Junke; Sun, Xiang; Yang, D Q; Ren, Tianling

2016-06-28

Development of nanoelectronics requires two-dimensional (2D) systems with both direct-bandgap and tunable electronic properties as they act in response to the external electric field (E-field). Here, we present a detailed theoretical investigation to predict the effect of atomic structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide (BP). We demonstrate that the splitting of bands and bandgap of BP depends on the number of layers and the stacking order. The values for the bandgap show a monotonically decreasing relationship with increasing layer number. We also show that AB-stacking BP has a direct-bandgap, while ABA-stacking BP has an indirect-bandgap when the number of layers n > 2. In addition, for a bilayer and a trilayer, the bandgap increases (decreases) as the electric field increases along the positive direction of the external electric field (E-field) (negative direction). In the case of four-layer BP, the bandgap exhibits a nonlinearly decreasing behavior as the increase in the electric field is independent of the electric field direction. The tunable mechanism of the bandgap can be attributed to a giant Stark effect. Interestingly, the investigation also shows that a semiconductor-to-metal transition may occur for the four-layer case or more layers beyond the critical electric field. Our findings may inspire more efforts in fabricating new nanoelectronics devices based on few-layer BP.

IL-17A GENE TRANSFER INDUCES BONE LOSS AND EPIDERMAL HYPERPLASIA ASSOCIATED WITH PSORIATIC ARTHRITIS

PubMed Central

ADAMOPOULOS, IANNIS E.; SUZUKI, ERIKA; CHAO, CHENG-CHI; GORMAN, DAN; ADDA, SARVESH; MAVERAKIS, EMANUAL; ZARBALIS, KONSTANTINOS; GEISSLER, RICHARD; ASIO, AGELIO; BLUMENSCHEIN, WENDY M; McCLANAHAN, TERRILL; DE WAAL MALEFYT, RENE; GERSHWIN, M. ERIC; BOWMAN, EDWARD P.

2014-01-01

Background Psoriatic arthritis (PsA) is a chronic inflammatory disease characterized by clinical features that include bone loss and epidermal hyperplasia. Aberrant cytokine expression has been linked to joint and skin pathology; however, it is unclear which cytokines are critical for disease initiation. IL-17A participates in many pathologic immune responses; however, its role in PsA has not been fully elucidated. Objective To determine the role of IL-17A in epidermal hyperplasia and bone destruction associated with psoriatic arthritis. Design An in vivo gene transfer approach was used to investigate the role of IL-17A in animal models of inflammatory (Collagen-induced arthritis) and non-inflammatory (RANKL-gene transfer) bone loss. Results IL-17A gene transfer induced the expansion of IL-17RA+CD11b+Gr1low osteoclast precursors and a concomitant elevation of biomarkers indicative of bone resorption. This occurred at a time preceding noticeable joint inflammation suggesting that IL-17A is critical for the induction of pathological bone resorption through direct activation of osteoclast precursors. Moreover, IL-17A induced a second myeloid population CD11b+Gr1high neutrophil-like cells which was associated with cutaneous pathology including epidermal hyperplasia, parakeratosis, and Munro’s microabscesses formation. Conclusion Collectively, these data support that IL-17A can play a key role in the pathogenesis of inflammation-associated arthritis and/or skin disease, as observed in PsA. PMID:24567524

Minimizing Collision Risk Between Migrating Raptors and Marine Wind Farms: Development of a Spatial Planning Tool

NASA Astrophysics Data System (ADS)

Baisner, Anette Jægerfeldt; Andersen, Jonas Lembcke; Findsen, Anders; Yde Granath, Simon Wilhelm; Madsen, Karin Ølgaard; Desholm, Mark

2010-11-01

An increased focus on renewable energy has led to the planning and construction of marine wind farms in Europe. Since several terrestrial studies indicate that raptors are especially susceptible to wind turbine related mortality, a Spatial Planning Tool is needed so that wind farms can be sited, in an optimal way, to minimize risk of collisions. Here we use measurements of body mass, wingspan and wing area of eight European raptor species, to calculate their Best Glide Ratio (BGR). The BGR was used to construct a linear equation, which, by the use of initial take-off altitude, could be used to calculate a Theoretical Maximum Distance (TMD) from the coast, attained by these soaring-gliding raptor species. If the nearest turbine, of future marine wind farms, is placed farther away from the coast than the estimated TMD, the collision risk between the turbine blades and these gliding raptors will be minimized. The tool was demonstrated in a case study at the Rødsand II wind farm in Denmark. Data on raptor migration altitude were gathered by radar. From the TMD attained by registered soaring-gliding raptors in the area, we concluded that the Rødsand II wind farm is not sited ideally, from an ornithological point of view, as potentially all three registered species are at risk of gliding through the area swept by the turbine rotor blades, and thereby at risk of colliding with the wind turbines.

Airborne EM, Lithology and in-situ Data Used for Quantizing Groundwater Salinity in Zeeland (NL)

NASA Astrophysics Data System (ADS)

Meyer, U.; Siemon, B.; van Baaren, E.; Dabekaussen, W.; Delsman, J. R.; Karaoulis, M.; Gunnink, J.; Pauw, P.; Vermaas, T.

2017-12-01

In a setting of predominantly saline surface waters in Zeeland, the Netherlands, the only available shallow fresh groundwater is present in the form of freshwater lenses floating on top of the saline groundwater. This fresh water is vital for agricultural, industrial, ecological, water conservation and drinking water functions. An essential first step for managing the usable water properly is to know the present spatial fresh-brackish-saline groundwater distribution. As traditional salinity monitoring is labor-intensive, airborne electromagnetics, which is fast and can cover large areas in short time, is an efficient alternative. A consortium of BGR, Deltares and TNO conducted FRESHEM Zeeland (FREsh Salt groundwater distribution by Helicopter ElectroMagnetic survey in the Province of Zeeland) in 2014-17. An area of more than 2000 square km was surveyed using BGR's helicopter-borne geophysical system totaling to about 9,600 line-km. The HEM data, after inversion to 2.5 Million resistivity-depth models for each of the three 1D inversion procedures applied (Marquardt single site, smooth and sharp laterally constrained inversion), served as base-line information for further interpretation. A probabilistic Monte Carlo approach combines HEM resistivities, 3D lithology model data (GeoTOP), laboratory results (formation factor and surface conductivity) and local in-situ groundwater measurements for the translation of resistivity to Chloride concentration. The resulting 3D voxel model enables stakeholders to implement spatial Chloride concentration in their groundwater models.

Sphingosine 1-phosphate receptor 3 regulates recruitment of anti-inflammatory monocytes to microvessels during implant arteriogenesis

PubMed Central

Awojoodu, Anthony O.; Ogle, Molly E.; Sefcik, Lauren S.; Bowers, Daniel T.; Martin, Kyle; Brayman, Kenneth L.; Lynch, Kevin R.; Peirce-Cottler, Shayn M.; Botchwey, Edward

2013-01-01

Endothelial cells play significant roles in conditioning tissues after injury by the production and secretion of angiocrine factors. At least two distinct subsets of monocytes, CD45+CD11b+Gr1+Ly6C+ inflammatory and CD45+CD11b+Gr1−Ly6C− anti-inflammatory monocytes, respond differentially to these angiocrine factors and promote pathogen/debris clearance and arteriogenesis/tissue regeneration, respectively. We demonstrate here that local sphingosine 1-phosphate receptor 3 (S1P3) agonism recruits anti-inflammatory monocytes to remodeling vessels. Poly(lactic-co-glycolic acid) thin films were used to deliver FTY720, an S1P1/3 agonist, to inflamed and ischemic tissues, which resulted in a reduction in proinflammatory cytokine secretion and an increase in regenerative cytokine secretion. The altered balance of cytokine secretion results in preferential recruitment of anti-inflammatory monocytes from circulation. The chemotaxis of these cells, which express more S1P3 than inflammatory monocytes, toward SDF-1α was also enhanced with FTY720 treatment, but not in S1P3 knockout cells. FTY720 delivery enhanced arteriolar diameter expansion and increased length density of the local vasculature. This work establishes a role for S1P receptor signaling in the local conditioning of tissues by angiocrine factors that preferentially recruit regenerative monocytes that can enhance healing outcomes, tissue regeneration, and biomaterial implant functionality. PMID:23918395

Performance of ITER as a burning plasma experiment

NASA Astrophysics Data System (ADS)

Shimada, M.; Mukhovatov, V.; Federici, G.; Gribov, Y.; Kukushkin, A.; Murakami, Y.; Polevoi, A.; Pustovitov, V.; Sengoku, S.; Sugihara, M.

2004-02-01

Recent performance analysis has improved confidence in achieving Q (= fusion power/auxiliary heating power)geq 10 in inductive operation in ITER. Performance analysis based on empirical scalings shows the feasibility of achieving Q geq 10 in inductive operation, particularly with improved modelling of helium exhaust. Analysis has also indicated the possibility that ITER can potentially demonstrate Q ~ 50, enabling studies of self-heated plasmas. Theory-based core modelling indicates the need for a high pedestal temperature (3.2-5.3 keV) to achieve Q geq 10, which is in the range of projections with presently available pedestal scalings. Pellet injection from the high-field side would be useful in enhancing Q and reducing edge localized mode (ELM) heat load in high plasma current operation. If the ELM heat load is not acceptable, it could be made tolerable by further tilting the target plate. Steady state operation scenarios at Q = 5 have been developed with modest requirements on confinement improvement and beta (HH98(y,2) geq 1.3 and bgrN geq 2.6). Stabilization of the resistive wall modes (RWMs), required in such regimes, is feasible with the present saddle coils and power supplies with double-wall structures taken into account. Recent analysis shows a potential of high power steady state operation with a fusion power of 0.7 GW at Q ~ 8. Achievement of the required bgrN ~ 3.6 by RWM stabilization is a possibility. Further analysis is also needed on reduction of the divertor target heat load.

Minimizing collision risk between migrating raptors and marine wind farms: development of a spatial planning tool.

PubMed

Baisner, Anette Jaegerfeldt; Andersen, Jonas Lembcke; Findsen, Anders; Yde Granath, Simon Wilhelm; Madsen, Karin Olgaard; Desholm, Mark

2010-11-01

An increased focus on renewable energy has led to the planning and construction of marine wind farms in Europe. Since several terrestrial studies indicate that raptors are especially susceptible to wind turbine related mortality, a Spatial Planning Tool is needed so that wind farms can be sited, in an optimal way, to minimize risk of collisions. Here we use measurements of body mass, wingspan and wing area of eight European raptor species, to calculate their Best Glide Ratio (BGR). The BGR was used to construct a linear equation, which, by the use of initial take-off altitude, could be used to calculate a Theoretical Maximum Distance (TMD) from the coast, attained by these soaring-gliding raptor species. If the nearest turbine, of future marine wind farms, is placed farther away from the coast than the estimated TMD, the collision risk between the turbine blades and these gliding raptors will be minimized. The tool was demonstrated in a case study at the Rødsand II wind farm in Denmark. Data on raptor migration altitude were gathered by radar. From the TMD attained by registered soaring-gliding raptors in the area, we concluded that the Rødsand II wind farm is not sited ideally, from an ornithological point of view, as potentially all three registered species are at risk of gliding through the area swept by the turbine rotor blades, and thereby at risk of colliding with the wind turbines.

Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes

ERIC Educational Resources Information Center

Wagner, Eugene P., II

2016-01-01

A student laboratory experiment to investigate the intrinsic and extrinsic bandgaps, dopant materials, and diode design in light-emitting diodes (LEDs) is presented. The LED intrinsic bandgap is determined by passing a small constant current through the diode and recording the junction voltage variation with temperature. A second visible…

Wide-Bandgap MOSFET Research with Virginia Tech Graduate Students |

Science.gov Websites

Advanced Manufacturing Research | NREL Wide Bandgap MOSFET Research with Virginia Tech Wide -Bandgap MOSFET Research with Virginia Tech Graduate Students Along with graduate student fellows from Virginia Tech, NREL is researching aspects related to the reliability and prognostics of power electronic

Acoustic frequency filter based on anisotropic topological phononic crystals.

PubMed

Chen, Ze-Guo; Zhao, Jiajun; Mei, Jun; Wu, Ying

2017-11-08

We present a design of acoustic frequency filter based on a two-dimensional anisotropic phononic crystal. The anisotropic band structure exhibits either a directional or a combined (global + directional) bandgap at certain frequency regions, depending on the geometry. When the time-reversal symmetry is broken, it may introduce a topologically nontrivial bandgap. The induced nontrivial bandgap and the original directional bandgap result in various interesting wave propagation behaviors, such as frequency filter. We develop a tight-binding model to characterize the effective Hamiltonian of the system, from which the contribution of anisotropy is explicitly shown. Different from the isotropic cases, the Zeeman-type splitting is not linear and the anisotropic bandgap makes it possible to achieve anisotropic propagation characteristics along different directions and at different frequencies.

Photovoltaic measurement of bandgap narrowing in moderately doped silicon

NASA Astrophysics Data System (ADS)

del Alamo, Jesus A.; Swanson, Richard M.; Lietoila, Arto

1983-05-01

Solar cells have been fabricated on n-type and p-type moderately doped Si. The shrinkage of the Si bandgap has been obtained by measuring the internal quantum efficiency in the near infrared spectrum ( hv = 1.00-1.25 eV) around the fundamental absorption edge. The results agree with previous optical measurements of bandgap narrowing in Si. It is postulated that this optically-determined bandgap narrowing is the rigid shrinkage of the forbidden gap due to many-body effects. The "device bandgap narrowing" obtained by measuring the pn product in bipolar devices leads to discrepant values because (i) the density of states in the conduction and valence band is modified due to the potential fluctuations originated in the variations in local impurity density, and (ii) the influence of Fermi-Dirac statistics.

Densely Aligned Graphene Nanoribbon Arrays and Bandgap Engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Justin; Chen, Changxin; Gong, Ming

Graphene has attracted great interest for future electronics due to its high mobility and high thermal conductivity. However, a two-dimensional graphene sheet behaves like a metal, lacking a bandgap needed for the key devices components such as field effect transistors (FETs) in digital electronics. It has been shown that, partly due to quantum confinement, graphene nanoribbons (GNRs) with ~2 nm width can open up sufficient bandgaps and evolve into semiconductors to exhibit high on/off ratios useful for FETs. However, a challenging problem has been that, such ultra-narrow GNRs (~2 nm) are difficult to fabricate, especially for GNRs with smooth edgesmore » throughout the ribbon length. Despite high on/off ratios, these GNRs show very low mobility and low on-state conductance due to dominant scattering effects by imperfections and disorders at the edges. Wider GNRs (>5 nm) show higher mobility, higher conductance but smaller bandgaps and low on/off ratios undesirable for FET applications. It is highly desirable to open up bandgaps in graphene or increase the bandgaps in wide GNRs to afford graphene based semiconductors for high performance (high on-state current and high on/off ratio) electronics. Large scale ordering and dense packing of such GNRs in parallel are also needed for device integration but have also been challenging thus far. It has been shown theoretically that uniaxial strains can be applied to a GNR to engineer its bandgap. The underlying physics is that under uniaxial strain, the Dirac point moves due to stretched C-C bonds, leading to an increase in the bandgap of armchair GNRs by up to 50% of its original bandgap (i.e. bandgap at zero strain). For zigzag GNRs, due to the existence of the edge states, changes of bandgap are smaller under uniaxial strain and can be increased by ~30%. This work proposes a novel approach to the fabrication of densely aligned graphene nanoribbons with highly smooth edges afforded by anisotropic etching and uniaxial strain for bandgap engineering of GNRs towards high on/off ratio and high on-state current GNR devices. First, we will develop a novel approach for the fabrication of high density GNR arrays (pitch <50 nm, tunable down to 30nm) with pre-defined edge orientation and smooth edges using a free standing nano-mask derived from diblock copolymer assembly for patterning of graphene sheets. Anisotropic graphene edges will be developed to afford smooth edges along crystallographic lattice directions. Then, we will fabricate GNR devices on flexible substrates and apply uniaxial strain to engineer the bandgap of the GNRs. The bandgap of GNRs could be increased by up to 50% under uniaxial strain according to theoretical calculations and will be investigated through electrical transport measurements. Micro-Raman spectroscopy of single GNRs and parallel arrays will be used to probe and quantify the uniaxial strain. Electrical measurements will be used to probe the on/off ratio of GNR FET devices and confirm the bandgap tuning effects. Finally, we plan to use dense parallel arrays of GNRs to demonstrate strained GNR field effect transistors with high on/off ratios and high on-state current, and compare strained GNR FETs with carbon nanotube and Si based field effect transistor (FET) devices.« less

An aeromagnetic survey over the northwestern Ross Ice Shelf and the McMurdo Sound area

USGS Publications Warehouse

Damaske, Detlef; Meyer, Uwe; McCafferty, Anne E.; Behrendt, John; Hoppe, Herbert

1992-01-01

As part of the expedition GANOVEX VI 1990/91, the Bundesanstalt für Geowissenschaften und Rohstoffe (BGR), the Alfred Wegener Institute for Polar and Marine Research (AWI), and the United States Geological Survey (USGS) carried out an airborne magnetic survey over the northwestern Ross Ice Shelf and McMurdo Sound between Ross Island, the Transantarctic Mountains, and Minna Bluff.The area planned for the aeromagnetic survey connects directly with the GANOVEX IV survey area (BGR & USGS 1987, BACHEM et al. 1989a) which terminated along an approximately cast-west line at about the latitude of Cape Bird. The GANOVEX IV survey covered the Victoria Land Basin - which is the westernmost of the three north/south striking basins in the Ross Sea - from its northern end in the Terra Nova Bay region to its known southern end at Ross Island. A possible southem extension of the Victoria Land Basin and its central graben structure (the Terror Rift as found from seismic surveys (COOPER et al. 1987) and what has been referred to as Victoria Graben in the aeromagnetic interpretation of the GANOVEX IV data (BOSUM et al. 1989) was one of the major targets for this survey.The survey was laid out in the form of blocks. A 135 km wide transect from the Transantarctic Mountains to about 175° W formed the focal block of the survey (Fig. 1) in which all major scientific objectives could be covered. Other survey blocks were planned to the south of this. During the course of the survey it turned out that in the time available no further area could be covered. Indeed, the unfavourable weather conditions made it impossible to complete even the above described main section fully.In detail, the lay-out of the survey area was closely following that of the GANOVEX IV survey to assure compatibility and direct continuation between the two data sets.The line spacing was chosen again to 4.4 km with a tic-line separation of 22 km. The survey altitude of 2,000 ft (610 m) corresponds to that of the Ross Sea section of the GANOVEX IV survey to which this survey area is directly adjacent. The profile lines were aligned approximately E-W, the tie-lines N-S.As part of the survey area is covered by the maps of the USGS Antarctica Reconnaissance Series 1:250,000 the Lambert conformal conic projection used for these maps was also used for the preparation of a flight line grid.

Tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Furukawa, Takuro; Toma, Ryo

By means of a hybrid density-functional method, we investigate the tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge. We consider [001], [111], and [110] uniaxial tensility and (001), (111), and (110) biaxial tensility. Under the condition of no normal stress, we determine both normal compression and internal strain, namely, relative displacement of two atoms in the primitive unit cell, by minimizing the total energy. We identify those strain types which can induce the band-gap transition, and evaluate the critical strain coefficient where the gap transition occurs. Either normal compression or internal strain operatesmore » unfavorably to induce the gap transition, which raises the critical strain coefficient or even blocks the transition. We also examine how each type of tensile strain decreases the band-gap energy, depending on its orientation. Our analysis clearly shows that synergistic operation of strain orientation and band anisotropy has a great influence on the gap transition and the gap energy.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Braly, Ian L.; Hillhouse, Hugh W.

The development of stable high-bandgap hybrid perovskites (HPs) with high optoelectronic quality may enable tandem solar cells with power conversion efficiencies approaching 30%. The halide composition of HPs has been observed to effect bandgap, carrier lifetime, and material stability. Here we report optoelectronic quality and stability under illumination of thousands of compositions ranging from the pure iodide (CH3NH3PbI3) to the diiodomonobromide (CH3NH3PbI2Br). Hyperspectral maps of steady-state absolute intensity photoluminescence (AIPL) are used to determine the quasi-Fermi level splitting (QFLS) at each point after synthesis. The QFLS upon first illumination increases with bandgap and reaches a maximum of 1.27 eV undermore » 1 sun illumination intensity for a bandgap of 1.75 eV. However, the optoelectronic quality (χ), defined as the ratio of the QFLS to the maximum theoretical QFLS for bandgap, decreases with bandgap from around 88% for 1.60 eV bandgap down to 82% for 1.84 eV bandgap. Further, we show that a reversible light induced defect forms that reduces the optoelectronic quality, particularly for high-bandgap materials. Composition analysis shows that the halide to lead ratio, (I + Br)/Pb, decreases from 3 for the pure iodide to 2.5 for the diiodomonobromide, suggesting a role of halide vacancies or halide substitution defects in the light-induced instability for this synthesis route. Even with the light-induced defect, a stable QFLS of about 1.17 eV is possible. Comparing our QFLS to Voc values from HP devices reported in the literature indicates that higher open circuit voltages are possible but may require optimization of band alignment. Further, the spectral shape of the PL emission is found to be more commensurate with Franz–Keldysh broadening from local electric fields or from a screened Thomas–Fermi density of states (as opposed to a joint density of states due to Urbach disorder).« less

Aeromagnetic and Gravity Surveys in Afghanistan: A Web Site for Distribution of Data

USGS Publications Warehouse

Sweeney, Ronald E.; Kucks, Robert P.; Hill, Patricia L.; Finn, Carol A.

2006-01-01

Aeromagnetic data were digitized from aeromagnetic maps created from aeromagnetic surveys flown in southeastern and southern Afghanistan in 1966 by PRAKLA, Gesellschaft fur praktische Lagerstattenforschung GmbH, Hannover, Germany, on behalf of the 'Bundesanstalt fur Bodenforschung', Hannover, Germany. The digitization was done along contour lines, followed by interpolation of the data along the original survey flight-lines. Survey and map specifications can be found in two project reports, 'prakla_report_1967.pdf' and 'bgr_report_1968.pdf', made available in this open-file report.

Effect of filling factor on photonic bandgap of chalcogenide photonic crystal

NASA Astrophysics Data System (ADS)

Singh, Rajpal; Suthar, B.; Bhargava, A.

2018-05-01

In the present work, the photonic band structure of 1-D chalcogenide photonic crystal of As2S3/air multilayered structure is calculated using the plane wave expansion method. The study is extended to investigate the effect of filling factor on the photonic bandgap. The increase of bandgap is explained in the study.

Microresonator and associated method for producing and controlling photonic signals with a photonic bandgap delay apparatus

NASA Technical Reports Server (NTRS)

Fork, Richard Lynn (Inventor); Jones, Darryl Keith (Inventor); Keys, Andrew Scott (Inventor)

2000-01-01

By applying a photonic signal to a microresonator that includes a photonic bandgap delay apparatus having a photonic band edge transmission resonance at the frequency of the photonic signal, the microresonator imparts a predetermined delay to the photonic signal. The photonic bandgap delay apparatus also preferably has a photonic band edge transmission resonance bandwidth which is at least as wide as the bandwidth of the photonic signal such that a uniform delay is imparted over the entire bandwidth of the photonic signal. The microresonator also includes a microresonator cavity, typically defined by a pair of switchable mirrors, within which the photonic bandgap delay apparatus is disposed. By requiring the photonic signal to oscillate within the microresonator cavity so as to pass through the photonic bandgap delay apparatus several times, the microresonator can controllably impart an adjustable delay to the photonic signal.

Photonic mesophases from cut rod rotators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stelson, Angela C.; Liddell Watson, Chekesha M., E-mail: cml66@cornell.edu; Avendano, Carlos

2016-01-14

The photonic band properties of random rotator mesophases are calculated using supercell methods applied to cut rods on a hexagonal lattice. Inspired by the thermodynamic mesophase for anisotropic building blocks, we vary the shape factor of cut fraction for the randomly oriented basis. We find large, stable bandgaps with high gap isotropy in the inverted and direct structures as a function of cut fraction, dielectric contrast, and filling fraction. Bandgap sizes up to 34.5% are maximized at high dielectric contrast for rods separated in a matrix. The bandgaps open at dielectric contrasts as low as 2.0 for the transverse magneticmore » polarization and 2.25 for the transverse electric polarization. Additionally, the type of scattering that promotes the bandgap is correlated with the effect of disorder on bandgap size. Slow light properties are investigated in waveguide geometry and slowdown factors up to 5 × 10{sup 4} are found.« less

Observing Ambipolar Behavior and Bandgap Engineering of MoS2 with Transport Measurements

NASA Astrophysics Data System (ADS)

Morris, Rachael; Wilson, Cedric; Hamblin, Glen; Tsuchikawa, Ryuichi; Deshpande, Vikram V.

Molybdenum disulfide is a transition metal semiconductor with a relatively large bandgap about 1.8 eV. In MoS2\\ it is expected that the bandgap is layer dependent and changes with the application of strain. In this talk I will outline our attempt to make simple field effect transistors with thin MoS2 on flexible substrates. Our aim was to see the bandgap of MoS2 directly via transport measurements using electrolytic gating, then apply uniaxial strain to a single layer MoS2 device to see the bandgap change. This was to be one way of confirming theoretical expectations, as well as compare with experimental results already obtained through photoluminescence spectroscopy. Though we did not obtain our target result with this stage of the experiment, future experimental work is planned. I will discuss the experimental method, the challenges of obtaining data and the results we obtained.

Large bandgap narrowing in rutile TiO2 aimed towards visible light applications and its correlation with vacancy-type defects history and transformation

NASA Astrophysics Data System (ADS)

Nair, Radhika V.; Gayathri, P. K.; Siva Gummaluri, Venkata; Nambissan, P. M. G.; Vijayan, C.

2018-01-01

Extension of photoactivity of TiO2 to the visible region is achievable via effective control over the intrinsic defects such as oxygen and Ti vacancies, which has several applications in visible photocatalysis and sensing. We present here the first observation of an apparent bandgap narrowing and bandgap tuning effect due to vacancy cluster transformation in rutile TiO2 structures to 1.84 eV from the bulk bandgap of 3 eV. A gradual transformation of divacancies (V Ti-O) to tri vacancies ({{V}Ti-O-T{{i-}}} ) achieved through a controlled solvothermal scheme appears to result in an apparent narrowing bandgap and tunability, as supported by positron annihilation lifetime and electron paramagnetic resonance spectroscopy measurements. Visible photocatalytic activity of the samples is demonstrated in terms of photodegradation of rhodamine B dye molecules.

Multi-fidelity machine learning models for accurate bandgap predictions of solids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pilania, Ghanshyam; Gubernatis, James E.; Lookman, Turab

Here, we present a multi-fidelity co-kriging statistical learning framework that combines variable-fidelity quantum mechanical calculations of bandgaps to generate a machine-learned model that enables low-cost accurate predictions of the bandgaps at the highest fidelity level. Additionally, the adopted Gaussian process regression formulation allows us to predict the underlying uncertainties as a measure of our confidence in the predictions. In using a set of 600 elpasolite compounds as an example dataset and using semi-local and hybrid exchange correlation functionals within density functional theory as two levels of fidelities, we demonstrate the excellent learning performance of the method against actual high fidelitymore » quantum mechanical calculations of the bandgaps. The presented statistical learning method is not restricted to bandgaps or electronic structure methods and extends the utility of high throughput property predictions in a significant way.« less

Multi-fidelity machine learning models for accurate bandgap predictions of solids

DOE PAGES

Pilania, Ghanshyam; Gubernatis, James E.; Lookman, Turab

2016-12-28

Here, we present a multi-fidelity co-kriging statistical learning framework that combines variable-fidelity quantum mechanical calculations of bandgaps to generate a machine-learned model that enables low-cost accurate predictions of the bandgaps at the highest fidelity level. Additionally, the adopted Gaussian process regression formulation allows us to predict the underlying uncertainties as a measure of our confidence in the predictions. In using a set of 600 elpasolite compounds as an example dataset and using semi-local and hybrid exchange correlation functionals within density functional theory as two levels of fidelities, we demonstrate the excellent learning performance of the method against actual high fidelitymore » quantum mechanical calculations of the bandgaps. The presented statistical learning method is not restricted to bandgaps or electronic structure methods and extends the utility of high throughput property predictions in a significant way.« less

Superlattice doped layers for amorphous silicon photovoltaic cells

DOEpatents

Arya, Rajeewa R.

1988-01-12

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

Fullerene-based low-density superhard materials with tunable bandgaps

NASA Astrophysics Data System (ADS)

Cao, Ai-Hua; Zhao, Wen-Juan; Gan, Li-Hua

2018-06-01

Four carbon allotropes built from tetrahedral symmetrical fullerenes C28 and C40 are predicted to be superhard materials with mass density around that of water, and all of them are porous semiconductors. Both the bandgaps and hardness decrease with increasing ratio of sp2 hybridized carbon atoms. The mechanical and thermodynamic stabilities of C28- and C40-based allotropes at zero pressure are confirmed by a variety of state-of-the-art theoretical calculations. The evolution trend of bandgap found here suggests that one can obtain low-density hard materials with tunable bandgaps by substituting the carbon atom in diamond with different Td-symmetrical non-IPR fullerene Cn.

Electrically tunable liquid crystal photonic bandgap fiber laser

NASA Astrophysics Data System (ADS)

Olausson, Christina B.; Scolari, Lara; Wei, Lei; Noordegraaf, Danny; Weirich, Johannes; Alkeskjold, Thomas T.; Hansen, Kim P.; Bjarklev, Anders

2010-02-01

We demonstrate electrical tunability of a fiber laser using a liquid crystal photonic bandgap fiber. Tuning of the laser is achieved by combining the wavelength filtering effect of a liquid crystal photonic bandgap fiber device with an ytterbium-doped photonic crystal fiber. We fabricate an all-spliced laser cavity based on a liquid crystal photonic bandgap fiber mounted on a silicon assembly, a pump/signal combiner with single-mode signal feed-through and an ytterbium-doped photonic crystal fiber. The laser cavity produces a single-mode output and is tuned in the range 1040- 1065 nm by applying an electric field to the silicon assembly.

High-Efficiency Solar Cells Using Photonic-Bandgap Materials

NASA Technical Reports Server (NTRS)

Dowling, Jonathan; Lee, Hwang

2005-01-01

Solar photovoltaic cells would be designed to exploit photonic-bandgap (PBG) materials to enhance their energy-conversion efficiencies, according to a proposal. Whereas the energy-conversion efficiencies of currently available solar cells are typically less than 30 percent, it has been estimated that the energy-conversion efficiencies of the proposed cells could be about 50 percent or possibly even greater. The primary source of inefficiency of a currently available solar cell is the mismatch between the narrow wavelength band associated with the semiconductor energy gap (the bandgap) and the broad wavelength band of solar radiation. This mismatch results in loss of power from both (1) long-wavelength photons, defined here as photons that do not have enough energy to excite electron-hole pairs across the bandgap, and (2) short-wavelength photons, defined here as photons that excite electron- hole pairs with energies much above the bandgap. It follows that a large increase in efficiency could be obtained if a large portion of the incident solar energy could be funneled into a narrow wavelength band corresponding to the bandgap. In the proposed approach, such funneling would be effected by use of PBG materials as intermediaries between the Sun and photovoltaic cells.

New way of polymer design for organic solar cells using the quinoid structure

NASA Astrophysics Data System (ADS)

Berube, Nicolas; Gaudreau, Josiane; Cote, Michel

2013-03-01

Research in organic photovoltaic applications are receiving a great interest as they offer an environmentally clean and low-cost solution to the world's rising energy needs. Controlling the device's active polymer optical bandgap is an important step that affects its absorption of the solar spectrum, and ultimately, its power conversion efficiency. The use of fused heterocycles that favors the polymer's quinoid structure has been a known method to lower the bandgap, for example, with isothianapthene, but there is a lack of quantifiable data on this effect. Density functional theory (DFT) calculations were done on over 60 polymers with bandgaps between 0.5 eV and 4 eV. They clearly show that low bandgaps are observed in copolymers that carefully stands between their quinoid and aromatic structures. Such balance can be obtained by mixing monomer units with quinoid characteristics with aromatic ones. Time-dependant DFT results also links low bandgaps with lower reorganization energy, which means that polymers with this structural form could possess higher charge mobilities. This link between the geometrical structure and the bandgap is compatible with a vast variety of polymers and is more convincing than the commonly used donor-acceptor method of polymer design.

Analysis of the reflective multibandgap solar cell concept

NASA Technical Reports Server (NTRS)

Stern, T. G.

1983-01-01

A new and unique approach to improving photovoltaic conversion efficiency, the reflective multiband gap solar cell concept, was examined. This concept uses back surface reflectors and light trapping with several physically separated cells of different bandgaps to make more effective use of energy from different portions of the solar spectrum. Preliminary tests performed under General Dynamics Independent Research and Development (IRAD) funding have demonstrated the capability for achieving in excess of 20% conversion efficiency with aluminum gallium arsenide and silicon. This study analyzed the ultimate potential for high conversion efficiency with 2, 3, 4, and 5 different bandgap materials, determined the appropriate bandgaps needed to achieve this optimized efficiency, and identified potential problems or constraints. The analysis indicated that an improvement in efficiency of better than 40% could be attained in this multibandgap approach, compared to a single bandgap converter under the same assumptions. Increased absorption loss on the back surface reflector was found to incur a minimal penalty on efficiency for two and three bandgap systems. Current models for bulk absorption losses in 3-5 materials were found to be inadequate for explaining laboratory observed transmission losses. Recommendations included the continued development of high bandgap back surface reflector cells and basic research on semiconductor absorption mechanisms.

How Transparent Oxides Gain Some Color: Discovery of a CeNiO3 Reduced Bandgap Phase As an Absorber for Photovoltaics.

PubMed

Barad, Hannah-Noa; Keller, David A; Rietwyk, Kevin J; Ginsburg, Adam; Tirosh, Shay; Meir, Simcha; Anderson, Assaf Y; Zaban, Arie

2018-06-11

In this work, we describe the formation of a reduced bandgap CeNiO 3 phase, which, to our knowledge, has not been previously reported, and we show how it is utilized as an absorber layer in a photovoltaic cell. The CeNiO 3 phase is prepared by a combinatorial materials science approach, where a library containing a continuous compositional spread of Ce x Ni 1- x O y is formed by pulsed laser deposition (PLD); a method that has not been used in the past to form Ce-Ni-O materials. The library displays a reduced bandgap throughout, calculated to be 1.48-1.77 eV, compared to the starting materials, CeO 2 and NiO, which each have a bandgap of ∼3.3 eV. The materials library is further analyzed by X-ray diffraction to determine a new crystalline phase. By searching and comparing to the Materials Project database, the reduced bandgap CeNiO 3 phase is realized. The CeNiO 3 reduced bandgap phase is implemented as the absorber layer in a solar cell and photovoltages up to 550 mV are achieved. The solar cells are also measured by surface photovoltage spectroscopy, which shows that the source of the photovoltaic activity is the reduced bandgap CeNiO 3 phase, making it a viable material for solar energy.

Optimization and experimental validation of stiff porous phononic plates for widest complete bandgap of mixed fundamental guided wave modes

NASA Astrophysics Data System (ADS)

Hedayatrasa, Saeid; Kersemans, Mathias; Abhary, Kazem; Uddin, Mohammad; Van Paepegem, Wim

2018-01-01

Phononic crystal plates (PhPs) have promising application in manipulation of guided waves for design of low-loss acoustic devices and built-in acoustic metamaterial lenses in plate structures. The prominent feature of phononic crystals is the existence of frequency bandgaps over which the waves are stopped, or are resonated and guided within appropriate defects. Therefore, maximized bandgaps of PhPs are desirable to enhance their phononic controllability. Porous PhPs produced through perforation of a uniform background plate, in which the porous interfaces act as strong reflectors of wave energy, are relatively easy to produce. However, the research in optimization of porous PhPs and experimental validation of achieved topologies has been very limited and particularly focused on bandgaps of flexural (asymmetric) wave modes. In this paper, porous PhPs are optimized through an efficient multiobjective genetic algorithm for widest complete bandgap of mixed fundamental guided wave modes (symmetric and asymmetric) and maximized stiffness. The Pareto front of optimization is analyzed and variation of bandgap efficiency with respect to stiffness is presented for various optimized topologies. Selected optimized topologies from the stiff and compliant regimes of Pareto front are manufactured by water-jetting an aluminum plate and their promising bandgap efficiency is experimentally observed. An optimized Pareto topology is also chosen and manufactured by laser cutting a Plexiglas (PMMA) plate, and its performance in self-collimation and focusing of guided waves is verified as compared to calculated dispersion properties.

Activation of Antigen-Specific CD8(+) T Cells by Poly-DL-Lactide/Glycolide (PLGA) Nanoparticle-Primed Gr-1(high) Cells.

PubMed

Luo, Wen-Hui; Yang, Ya-Wun

2016-04-01

The aim of this study was to investigate the induction of antigen-specific T cell activation and cell cycle modulation by a poly-DL-lactide/glycolide (PLGA) nanoparticle (NP)-primed CD11b(+)Gr-1(high) subset isolated from mouse bone marrow. PLGA NPs containing the ovalbumin (OVA) antigen were prepared using the double emulsion and solvent evaporation method, and protein release rate and cell viability were determined. The Lin2(¯)CD11b(+)Gr-1(high)Ly6c(low) (Gr-1(high)) subset was sorted from the bone marrow of C57BL/6 J mice by fluorescence-activated cell sorting (FACS) and co-cultured with OT-I CD8(+) splenic T cells. Proliferation of OT-I CD8(+) T cells was monitored, and cell cycles were determined by 5-bromo-2'-deoxyuridine (BrdU) labeling. Treatment of Gr-1(high) cells with PLGA/OVA NPs upregulated expression of the SIINFEKL-H2K(b) complex in the context of MHC I. Co-cultures of OT-I CD8(+) T cells with the PLGA/OVA NP-primed Gr-1(high) cells induced the proliferation of T cells in vitro and modulated cell division and morphology. Treatment of Gr-1(high) cells with PLGA/OVA NPs also induced cell apoptosis and necrosis. This study demonstrated the function of PLGA/OVA NPs in the activation of OT-I CD8(+) T cells and the capability of cross-presentation via the Gr-1(high) polymorphonuclear subset from mouse bone marrow.

G-CSF/anti-G-CSF antibody complexes drive the potent recovery and expansion of CD11b+Gr-1+ myeloid cells without compromising CD8+ T cell immune responses

PubMed Central

2013-01-01

Background Administration of recombinant G-CSF following cytoreductive therapy enhances the recovery of myeloid cells, minimizing the risk of opportunistic infection. Free G-CSF, however, is expensive, exhibits a short half-life, and has poor biological activity in vivo. Methods We evaluated whether the biological activity of G-CSF could be improved by pre-association with anti-G-CSF mAb prior to injection into mice. Results We find that the efficacy of G-CSF therapy can be enhanced more than 100-fold by pre-association of G-CSF with an anti-G-CSF monoclonal antibody (mAb). Compared with G-CSF alone, administration of G-CSF/anti-G-CSF mAb complexes induced the potent expansion of CD11b+Gr-1+ myeloid cells in mice with or without concomitant cytoreductive treatment including radiation or chemotherapy. Despite driving the dramatic expansion of myeloid cells, in vivo antigen-specific CD8+ T cell immune responses were not compromised. Furthermore, injection of G-CSF/anti-G-CSF mAb complexes heightened protective immunity to bacterial infection. As a measure of clinical value, we also found that antibody complexes improved G-CSF biological activity much more significantly than pegylation. Conclusions Our findings provide the first evidence that antibody cytokine complexes can effectively expand myeloid cells, and furthermore, that G-CSF/anti-G-CSF mAb complexes may provide an improved method for the administration of recombinant G-CSF. PMID:24279871

First-principles calculations on strain and electric field induced band modulation and phase transition of bilayer WSe2sbnd MoS2 heterostructure

NASA Astrophysics Data System (ADS)

Lei, Xiang; Yu, Ke

2018-04-01

A purposeful modulation of physical properties of material via change external conditions has long captured people's interest and can provide many opportunities to improve the specific performance of electronic devices. In this work, a comprehensive first-principles survey was performed to elucidate that the bandgap and electronic properties of WSe2sbnd MoS2 heterostructure exhibited unusual response to exterior strain and electric field in comparison with pristine structures. It demonstrates that the WSe2sbnd MoS2 is a typical type-II heterostructure, and thus the electron-hole pairs can be effectively spatially separated. The external effects can trigger the electronic phase transition from semiconducting to metallic state, which originates from the internal electric evolution induced energy-level shift. Interestingly, the applied strain shows no direction-depended character for the modulation of bandgap of WSe2sbnd MoS2 heterostructure, while it exists in the electric field tuning processes and strongly depends on the direction of the electric field. Our findings elucidate the tunable electronic property of bilayer WSe2sbnd MoS2 heterostructure, and would provide a valuable reference to design the electronic nanodevices.

Surface- and interface-engineered heterostructures for solar hydrogen generation

NASA Astrophysics Data System (ADS)

Chen, Xiangyan; Li, Yanrui; Shen, Shaohua

2018-04-01

Photoelectrochemical (PEC) water splitting based on semiconductor photoelectrodes provides a promising platform for reducing environmental pollution and solving the energy crisis by developing clean, sustainable and environmentally friendly hydrogen energy. In this context, metal oxides with their advantages including low cost, good chemical stability and environmental friendliness, have attracted extensive attention among the investigated candidates. However, the large bandgap, poor charge transfer ability and high charge recombination rate limit the PEC performance of metal oxides as photoelectrodes. To solve this limitation, many approaches toward enhanced PEC water splitting performance, which focus on surface and interface engineering, have been presented. In this topical review, we concentrate on the heterostructure design of some typical metal oxides with narrow bandgaps (e.g. Fe2O3, WO3, BiVO4 and Cu2O) as photoelectrodes. An overview of the surface- and interface-engineered heterostructures, including semiconductor heterojunctions, surface protection, surface passivation and cocatalyst decoration, will be given to introduce the recent advances in metal oxide heterostructures for PEC water splitting. This article aims to provide fundamental references and principles for designing metal oxide heterostructures with high activity and stability as photoelectrodes for PEC solar hydrogen generation.

Effect of Se concentration on photonic bandgap of 1-D As-S-Se/air multilayers

NASA Astrophysics Data System (ADS)

Singh, Rajpal; Suthar, B.; Bhargava, A.

2018-05-01

The photonic band structure of 1-D chalcogenide photonic crystal consisting of As-S-Se/air multilayered structure is studied. The photonic band structure is calculated using plane wave expansion method. The effect of Se constration on the photonic bandgap is studied. It is found that the photonic bandgap increases with Se-concentration and shows the red shift.

Genetic Algorithm Optimization of Phononic Bandgap Structures

DTIC Science & Technology

2006-09-01

a GA with a computational finite element method for solving the acoustic wave equation, and find optimal designs for both metal-matrix composite...systems consisting of Ti/SiC, and H2O-filled porous ceramic media, by maximizing the relative acoustic bandgap for these media. The term acoustic here...stress minimization, global optimization, phonon bandgap, genetic algorithm, periodic elastic media, inhomogeneity, inclusion, porous media, acoustic

Optoelectronic Quality and Stability of Hybrid Perovskites from MAPbI 3 to MAPbI 2 Br Using Composition Spread Libraries

DOE PAGES

Braly, Ian L.; Hillhouse, Hugh W.

2015-12-22

The development of stable high-bandgap hybrid perovskites (HPs) with high optoelectronic quality may enable tandem solar cells with power conversion efficiencies approaching 30%. The halide composition of HPs has been observed to effect bandgap, carrier lifetime, and material stability. Here we report optoelectronic quality and stability under illumination of thousands of compositions ranging from the pure iodide (CH3NH3PbI3) to the diiodomonobromide (CH3NH3PbI2Br). Hyperspectral maps of steady-state absolute intensity photoluminescence (AIPL) are used to determine the quasi-Fermi level splitting (QFLS) at each point after synthesis. The QFLS upon first illumination increases with bandgap and reaches a maximum of 1.27 eV undermore » 1 sun illumination intensity for a bandgap of 1.75 eV. However, the optoelectronic quality (χ), defined as the ratio of the QFLS to the maximum theoretical QFLS for bandgap, decreases with bandgap from around 88% for 1.60 eV bandgap down to 82% for 1.84 eV bandgap. Further, we show that a reversible light induced defect forms that reduces the optoelectronic quality, particularly for high-bandgap materials. Composition analysis shows that the halide to lead ratio, (I + Br)/Pb, decreases from 3 for the pure iodide to 2.5 for the diiodomonobromide, suggesting a role of halide vacancies or halide substitution defects in the light-induced instability for this synthesis route. Even with the light-induced defect, a stable QFLS of about 1.17 eV is possible. Comparing our QFLS to Voc values from HP devices reported in the literature indicates that higher open circuit voltages are possible but may require optimization of band alignment. Further, the spectral shape of the PL emission is found to be more commensurate with Franz–Keldysh broadening from local electric fields or from a screened Thomas–Fermi density of states (as opposed to a joint density of states due to Urbach disorder).« less

Precision Voltage Referencing Techniques in MOS Technology.

NASA Astrophysics Data System (ADS)

Song, Bang-Sup

With the increasing complexity of functions on a single MOS chip, precision analog cicuits implemented in the same technology are in great demand so as to be integrated together with digital circuits. The future development of MOS data acquisition systems will require precision on-chip MOS voltage references. This dissertation will probe two most promising configurations of on-chip voltage references both in NMOS and CMOS technologies. In NMOS, an ion-implantation effect on the temperature behavior of MOS devices is investigated to identify the fundamental limiting factors of a threshold voltage difference as an NMOS voltage source. For this kind of voltage reference, the temperature stability on the order of 20ppm/(DEGREES)C is achievable with a shallow single-threshold implant and a low-current, high-body bias operation. In CMOS, a monolithic prototype bandgap reference is designed, fabricated and tested which embodies a curvature compensation and exhibits a minimized sensitivity to the process parameter variation. Experimental results imply that an average temperature stability on the order of 10ppm/(DEGREES)C with a production spread of less than 10ppm/(DEGREES)C feasible over the commercial temperature range.

Resonance fluorescence spectrum in a two-band photonic bandgap crystal

NASA Astrophysics Data System (ADS)

Lee, Ray-Kuang; Lai, Yinchieh

2003-05-01

Steady state resonance fluorescence spectra from a two-level atom embedded in a photonic bandgap crystal and resonantly driven by a classical pump light are calculated. The photonic crystal is considered to be with a small bandgap which is in the order of magnitude of the Rabi frequency and is modeled by the anisotropic two-band dispersion relation. Non-Markovian noises caused by the non-uniform distribution of photon density states near the photonic bandgap are taken into account by a new approach which linearizes the optical Bloch equations by using the Liouville operator expansion. Fluorescence spectra that only exhibit sidebands of the Mollow triplet are found, indicating that there is no coherent Rayleigh scattering process.

Electro-mechanical Properties of Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Anantram, M. P.; Yang, Liu; Han, Jie; Liu, J. P.; Saubum Subhash (Technical Monitor)

1998-01-01

We present a simple picture to understand the bandgap variation of carbon nanotubes with small tensile and torsional strains, independent of chirality. Using this picture, we are able to predict a simple dependence of d(Bandoap)$/$d(strain) on the value of $(N_x-N_y)*mod 3$, for semiconducting tubes. We also predict a novel change in sign of d(Bandgap)$/$d(strain) as a function of tensile strain arising from a change in the value of $q$ corresponding to the minimum bandgap. These calculations are complemented by calculations of the change in bandgap using energy minimized structures, and some important differences are discussed. The calculations are based on the $i$ electron approximation.

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

NASA Astrophysics Data System (ADS)

Hsiao, F.-M.; Schnedler, M.; Portz, V.; Huang, Y.-C.; Huang, B.-C.; Shih, M.-C.; Chang, C.-W.; Tu, L.-W.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Chiu, Y.-P.

2017-01-01

We demonstrate the potential of sub-bandgap laser-excited cross-sectional scanning tunneling microscopy and spectroscopy to investigate the presence of defect states in semiconductors. The characterization method is illustrated on GaN layers grown on Si(111) substrates without intentional buffer layers. According to high-resolution transmission electron microscopy and cathodoluminescence spectroscopy, the GaN layers consist of nanoscale wurtzite and zincblende crystallites with varying crystal orientations and hence contain high defect state densities. In order to discriminate between band-to-band excitation and defect state excitations, we use sub-bandgap laser excitation. We probe a clear increase in the tunnel current at positive sample voltages during sub-bandgap laser illumination for the GaN layer with high defect density, but no effect is found for high quality GaN epitaxial layers. This demonstrates the excitation of free charge carriers at defect states. Thus, sub-bandgap laser-excited scanning tunneling spectroscopy is a powerful complimentary characterization tool for defect states.

Open-Circuit Voltage Deficit, Radiative Sub-Bandgap States, and Prospects in Quantum Dot Solar Cells

PubMed Central

Chuang, Chia-Hao Marcus; Maurano, Andrea; Brandt, Riley E.; Hwang, Gyu Weon; Jean, Joel; Buonassisi, Tonio; Bulović, Vladimir; Bawendi, Moungi G.

2016-01-01

Quantum dot photovoltaics (QDPV) offer the potential for low-cost solar cells. To develop strategies for continued improvement in QDPVs, a better understanding of the factors that limit their performance is essential. Here, we study carrier recombination processes that limit the power conversion efficiency of PbS QDPVs. We demonstrate the presence of radiative sub-bandgap states and sub-bandgap state filling in operating devices by using photoluminescence (PL) and electroluminescence (EL) spectroscopy. These sub-bandgap states are most likely the origin of the high open-circuit-voltage (VOC) deficit and relatively limited carrier collection that have thus far been observed in QDPVs. Combining these results with our perspectives on recent progress in QDPV, we conclude that eliminating sub-bandgap states in PbS QD films has the potential to show a greater gain than may be attainable by optimization of interfaces between QDs and other materials. We suggest possible future directions that could guide the design of high-performance QDPVs. PMID:25927871

Photocurrent modulation under dual excitation in individual GaN nanowires.

PubMed

Yadav, Shivesh; Deb, Swarup; Gupta, Kantimay Das; Dhar, Subhabrata

2018-06-21

The photo-response properties of vapor-liquid-solid (VLS) grown [101[combining macron]0] oriented individual GaN nanowires of the diameter ranging from 30 to 100 nm are investigated under the joint illumination of above and sub-bandgap lights. When illuminated with above-bandgap light, these wires show persistent photoconductivity (PPC) effects with long build-up and decay times. The study reveals the quenching of photoconductivity (PC) upon illumination with an additional sub-bandgap light. PC recovers when the sub-bandgap illumination is withdrawn. A rate equation model attributing the PPC effect to the entrapment of photo-generated holes in the surface states and the PC quenching effect on the sub-bandgap light driven release of the holes from the trapped states has been proposed. The average height of the capture barrier has been found to be about 400 meV. The study also suggests that the capture barrier has a broad distribution with an upper cut-off energy of ∼2 eV.

First-principles study of bandgap tuning in Ge1-xPbxSe

NASA Astrophysics Data System (ADS)

Lohani, Himanshu

2018-03-01

Narrow bandgap and its tuning are important aspects of materials for their technological applications. In this context group IV-VI semiconductors are one of the interesting candidates. In this paper, we explore the possibility of bandgap tuning in one of the family member of this family GeSe by using isoelectronic Pb doping. Our study is first-principles based electronic structure calculations of Ge1-xPbxSe. This study reveals that the Ge-p and Se-p states are strongly hybridized in GeSe and shows a gap in the DOS at Ef in GeSe. This gap reduces systematically with simultaneous enhancement of the states in the near Ef region as a function of Pb doping. This leads tuning of the indirect bandgap in GeSe via Pb doping. The results of the indirect bandgap decrement are consistent with the experimental findings. We propose a mechanism where the electrostatic effect of dopant Pb cation could be responsible for these changes in the electronic structure of GeSe.

Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors

NASA Astrophysics Data System (ADS)

Dang Chien, Nguyen; Shih, Chun-Hsing; Hoa, Phu Chi; Minh, Nguyen Hong; Thi Thanh Hien, Duong; Nhung, Le Hong

2016-06-01

The two-band Kane model has been popularly used to calculate the band-to-band tunneling (BTBT) current in tunnel field-effect transistor (TFET) which is currently considered as a promising candidate for low power applications. This study theoretically clarifies the maximum electric field approximation (MEFA) of direct BTBT Kane model and evaluates its appropriateness for low bandgap semiconductors. By analysing the physical origin of each electric field term in the Kane model, it has been elucidated in the MEFA that the local electric field term must be remained while the nonlocal electric field terms are assigned by the maximum value of electric field at the tunnel junction. Mathematical investigations have showed that the MEFA is more appropriate for low bandgap semiconductors compared to high bandgap materials because of enhanced tunneling probability in low field regions. The appropriateness of the MEFA is very useful for practical uses in quickly estimating the direct BTBT current in low bandgap TFET devices.

Synergistic effects of lead thiocyanate additive and solvent annealing on the performance of wide-bandgap perovskite solar cells

DOE PAGES

Yu, Yue; Wang, Changlei; Grice, Corey R.; ...

2017-04-26

Here, we show that the cooperation of lead thiocyanate additive and a solvent annealing process can effectively increase the grain size of mixed-cation lead mixed-halide perovskite thin films while avoiding excess lead iodide formation. As a result, the average grain size of the wide-bandgap mixed-cation lead perovskite thin films increases from 66 ± 24 to 1036 ± 111 nm, and the mean carrier lifetime shows a more than 3-fold increase, from 330 ns to over 1000 ns. Consequently, the average open-circuit voltage of wide-bandgap perovskite solar cells increases by 80 (70) mV, and the average power conversion efficiency (PCE) increasesmore » from 13.44 ± 0.48 (11.75 ± 0.34) to 17.68 ± 0.36 (15.58 ± 0.55)% when measured under reverse (forward) voltage scans. The best-performing wide-bandgap perovskite solar cell, with a bandgap of 1.75 eV, achieves a stabilized PCE of 17.18%.« less

Photonic band-gap modulation of blue phase liquid crystal (Presentation Recording)

NASA Astrophysics Data System (ADS)

Lin, Tsung-Hsien

2015-10-01

Blue phase liquid crystals (BPLCs) are self-assembled 3D photonic crystals exhibiting high susceptibility to external stimuli. Two methods for the photonic bandgap tuning of BPs were demonstrated in this work. Introducing a chiral azobenzene into a cholesteric liquid crystal could formulate a photoresponsive BPLC. Under violet irradiation, the azo dye experiences trans-cis isomerization, which leads to lattice swelling as well as phase transition in different stages of the process. Ultrawide reversible tuning of the BP photonic bandgap from ultraviolet to near infrared has been achieved. The tuning is reversible and nonvolatile. We will then demonstract the electric field-induced bandgap tuning in polymer-stabilized BPLCs. Under different BPLCs material preparation conditions, both red-shift and broadening of the photonic bandgaps have been achieved respectively. The stop band can be shifted over 100 nm. The bandwidth can be expanded from ~ 30 nm to ~ 250 nm covering nearly the full visible range. It is believed that the developed approaches could strongly promote the use of BPLC in photonic applications.

Simple Experimental Verification of the Relation between the Band-Gap Energy and the Energy of Photons Emitted by LEDs

ERIC Educational Resources Information Center

Precker, Jurgen W.

2007-01-01

The wavelength of the light emitted by a light-emitting diode (LED) is intimately related to the band-gap energy of the semiconductor from which the LED is made. We experimentally estimate the band-gap energies of several types of LEDs, and compare them with the energies of the emitted light, which ranges from infrared to white. In spite of…

Bio-inspired band gap engineering of zinc oxide by intracrystalline incorporation of amino acids.

PubMed

Brif, Anastasia; Ankonina, Guy; Drathen, Christina; Pokroy, Boaz

2014-01-22

Bandgap engineering of zinc oxide semiconductors can be achieved using a bio-inspired method. During a bioInspired crystallization process, incorporation of amino acids into the crystal structure of ZnO induces lattice strain that leads to linear bandgap shifts. This allows for fine tuning of the bandgap in a bio-inspired route. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

How Bilayer Graphene Got a Bandgap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng Wang

2009-06-02

Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

How Bilayer Graphene Got a Bandgap

ScienceCinema

Feng Wang

2017-12-09

Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

How Bilayer Graphene Got a Bandgap

ScienceCinema

Wang, Feng

2018-01-08

Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

Theoretical prediction of sandwiched two-dimensional phosphide binary compound sheets with tunable bandgaps and anisotropic physical properties

NASA Astrophysics Data System (ADS)

Zhang, C. Y.; Yu, M.

2018-03-01

Atomic layers of GaP and InP binary compounds with unique anisotropic structural, electronic and mechanical properties have been predicted from first-principle molecular dynamics simulations. These new members of the phosphide binary compound family stabilize to a sandwiched two-dimensional (2D) crystalline structure with orthorhombic lattice symmetry and high buckling of 2.14 Å-2.46 Å. Their vibration modes are similar to those of phosphorene with six Raman active modes ranging from ˜80 cm-1 to 400 cm-1. The speeds of sound in their phonon dispersions reflect anisotropy in their elastic constants, which was further confirmed by their strong directional dependence of Young’s moduli and effective nonlinear elastic moduli. They show wide bandgap semiconductor behavior with fundamental bandgaps of 2.89 eV for GaP and 2.59 eV for InP, respectively, even wider than their bulk counterparts. Such bandgaps were found to be tunable under strain. In particular, a direct-indirect bandgap transition was found under certain strains along zigzag or biaxial orientations, reflecting their promising applications in strain-induced bandgap engineering in nanoelectronics and photovoltaics. Feasible pathways to realize these novel 2D phosphide compounds are also proposed.

Single-graded CIGS with narrow bandgap for tandem solar cells.

PubMed

Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

2018-01-01

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Numerical study on characteristic of two-dimensional metal/dielectric photonic crystals

NASA Astrophysics Data System (ADS)

Zong, Yi-Xin; Xia, Jian-Bai; Wu, Hai-Bin

2017-04-01

An improved plan-wave expansion method is adopted to theoretically study the photonic band diagrams of two-dimensional (2D) metal/dielectric photonic crystals. Based on the photonic band structures, the dependence of flat bands and photonic bandgaps on two parameters (dielectric constant and filling factor) are investigated for two types of 2D metal/dielectric (M/D) photonic crystals, hole and cylinder photonic crystals. The simulation results show that band structures are affected greatly by these two parameters. Flat bands and bandgaps can be easily obtained by tuning these parameters and the bandgap width may reach to the maximum at certain parameters. It is worth noting that the hole-type photonic crystals show more bandgaps than the corresponding cylinder ones, and the frequency ranges of bandgaps also depend strongly on these parameters. Besides, the photonic crystals containing metallic medium can obtain more modulation of photonic bands, band gaps, and large effective refractive index, etc. than the dielectric/dielectric ones. According to the numerical results, the needs of optical devices for flat bands and bandgaps can be met by selecting the suitable geometry and material parameters. Project supported by the National Basic Research Program of China (Grant No. 2011CB922200) and the National Natural Science Foundation of China (Grant No. 605210010).

Single-graded CIGS with narrow bandgap for tandem solar cells

PubMed Central

Avancini, Enrico; Buecheler, Stephan; Tiwari, Ayodhya N.

2018-01-01

Abstract Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells. PMID:29707066

Heat-Electric Power Conversion Without Temperature Difference Using Only n-Type Ba8Au x Si46-x Clathrate with Au Compositional Gradient

NASA Astrophysics Data System (ADS)

Osakabe, Yuki; Tatsumi, Shota; Kotsubo, Yuichi; Iwanaga, Junpei; Yamasoto, Keita; Munetoh, Shinji; Furukimi, Osamu; Nakashima, Kunihiko

2018-02-01

Thermoelectric power generation is typically based on the Seebeck effect under a temperature gradient. However, the heat flux generated by the temperature difference results in low conversion efficiency. Recently, we developed a heat-electric power conversion mechanism using a material consisting of a wide-bandgap n-type semiconductor, a narrow-bandgap intrinsic semiconductor, and a wide-bandgap p-type semiconductor. In this paper, we propose a heat-electric power conversion mechanism in the absence of a temperature difference using only n-type Ba8Au x Si46-x clathrate. Single-crystal Ba8Au x Si46-x clathrate with a Au compositional gradient was synthesized by Czochralski method. Based on the results of wavelength-dispersive x-ray spectroscopy and Seebeck coefficient measurements, the presence of a Au compositional gradient in the sample was confirmed. It also observed that the electrical properties changed gradually from wide-bandgap n-type to narrow-bandgap n-type. When the sample was heated in the absence of a temperature difference, the voltage generated was approximately 0.28 mV at 500°C. These results suggest that only an n-type semiconductor with a controlled bandgap can generate electric power in the absence of a temperature difference.

The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

NASA Technical Reports Server (NTRS)

Curtis, H. B.; Hart, R. E., Jr.

1982-01-01

Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

On the role of micro-inertia in enriched continuum mechanics.

PubMed

Madeo, Angela; Neff, Patrizio; Aifantis, Elias C; Barbagallo, Gabriele; d'Agostino, Marco Valerio

2017-02-01

In this paper, the role of gradient micro-inertia terms [Formula: see text] and free micro-inertia terms [Formula: see text] is investigated to unveil their respective effects on the dynamic behaviour of band-gap metamaterials. We show that the term [Formula: see text] alone is only able to disclose relatively simplified dispersive behaviour. On the other hand, the term [Formula: see text] alone describes the full complex behaviour of band-gap metamaterials. A suitable mixing of the two micro-inertia terms allows us to describe a new feature of the relaxed-micromorphic model, i.e. the description of a second band-gap occurring for higher frequencies. We also show that a split of the gradient micro-inertia [Formula: see text], in the sense of Cartan-Lie decomposition of matrices, allows us to flatten separately the longitudinal and transverse optic branches, thus giving us the possibility of a second band-gap. Finally, we investigate the effect of the gradient inertia [Formula: see text] on more classical enriched models such as the Mindlin-Eringen and the internal variable ones. We find that the addition of such a gradient micro-inertia allows for the onset of one band-gap in the Mindlin-Eringen model and three band-gaps in the internal variable model. In this last case, however, non-local effects cannot be accounted for, which is a too drastic simplification for most metamaterials. We conclude that, even when adding gradient micro-inertia terms, the relaxed micromorphic model remains the best performing one, among the considered enriched models, for the description of non-local band-gap metamaterials.

Defect Related Dark Currents in III-V MWIR nBn Detectors

DTIC Science & Technology

2014-01-01

theory indicates a thermal activation energy of half the bandgap, and a direct proportionality between dark current density and defect density. 2.2...density due to defects maintains a full bandgap thermal activation energy , and is proportional to the square root of the defect density. Although neutral...photodiodes, and cooling is more efficient in reducing nBn’s dark current due to the full bandgap activation energy . Downloaded From: http

Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector

NASA Technical Reports Server (NTRS)

Sengupta, D. K.; Gunapala, S. D.; Bandara, S. V.; Liu, J. K.; Luong, E.; Hong, W.; Mumolo, J.; Bae, Y.; Stillman, G. E.; Jackson, S. L.;

Microfabricated bulk wave acoustic bandgap device

DOEpatents

Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, Carol

2010-06-08

A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

Microfabricated bulk wave acoustic bandgap device

DOEpatents

Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, legal representative, Carol

2010-11-23

A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

Visible light photoreactivity from Carbon nitride bandgap states in Nb and Ti oxides

NASA Astrophysics Data System (ADS)

Lee, Hosik; Ohno, Takahisa; Icnsee Team

2011-03-01

Lamellar niobic and titanic solid acids (HNb3O8 , H2Ti4O9) are photocatalysts which can be used for environmental cleanup application and hydrogen production through water splitting. To increase their efficiency, bandgap adjustment which can induce visible light reactivity in addition to ultraviolet light has been one of hot issue in this kinds of photo-catalytic materials. Nitrogen-doping was one of the direction and its microscopic structures are disputed in this decade. In this work, we calculate the layered niobic and titanic solid acids structure and bandgap. Bandgap reduction by carbon nitride absorption are observed computationally. It is originated from localized nitrogen state which is consistent with previous experiments.

Tunable photonic band gaps and optical nonreciprocity by an RF-driving ladder-type system in moving optical lattice

NASA Astrophysics Data System (ADS)

Ba, Nuo; Zhong, Xin; Wang, Lei; Fei, Jin-You; Zhang, Yan; Bao, Qian-Qian; Xiao, Li

2018-03-01

We investigate photonic transport properties of the 1D moving optical lattices filled with vast cold atoms driven into a four-level ladder-type system and obtain dynamically controlled photonic bandgaps and optical nonreciprocity. It is found that the two obvious optical nonreciprocity can be generated at two well-developed photonic bandgaps based on double dark states in the presence of a radio-frequency field. However, when the radio-frequency field is absence, the only one induced photonic bandgaps with distinguishing optical nonreciprocity can be opened up via single dark state. Dynamic control of the induced photonic bandgaps and optical nonreciprocity could be exploited to achieve all-optical diodes and routing for quantum information networks.

Coulomb engineering of the bandgap and excitons in two-dimensional materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raja, Archana; Chaves, Andrey; Yu, Jaeeun

Here, the ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS 2 and WSe 2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as anmore » initial step towards the creation of diverse lateral junctions with nanoscale resolution.« less

Coulomb engineering of the bandgap and excitons in two-dimensional materials

DOE PAGES

Raja, Archana; Chaves, Andrey; Yu, Jaeeun; ...

2017-05-04

Here, the ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS 2 and WSe 2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as anmore » initial step towards the creation of diverse lateral junctions with nanoscale resolution.« less

Coulomb engineering of the bandgap and excitons in two-dimensional materials

PubMed Central

Raja, Archana; Chaves, Andrey; Yu, Jaeeun; Arefe, Ghidewon; Hill, Heather M.; Rigosi, Albert F.; Berkelbach, Timothy C.; Nagler, Philipp; Schüller, Christian; Korn, Tobias; Nuckolls, Colin; Hone, James; Brus, Louis E.; Heinz, Tony F.; Reichman, David R.; Chernikov, Alexey

2017-01-01

The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution. PMID:28469178

Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Comfort, Everett; Lee, Ji Ung

2016-06-01

The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range.

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana

Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride

PubMed Central

Ba, Kun; Jiang, Wei; Cheng, Jingxin; Bao, Jingxian; Xuan, Ningning; Sun, Yangye; Liu, Bing; Xie, Aozhen; Wu, Shiwei; Sun, Zhengzong

2017-01-01

Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN’s hexagonal structure, which involves defects or grain boundaries (GBs) engineering in the basal plane. The other way is to invite foreign atoms, such as carbon, to forge bizarre hybrid structures like hetero-junctions or semiconducting h-BNC materials. Here we successfully developed a general chemical method to synthesize these different h-BN derivatives, showcasing how the chemical structure can be manipulated with or without a graphene precursor, and the bandgap be tuned to ~2 eV, only one third of the pristine one’s. PMID:28367992

On the role of micro-inertia in enriched continuum mechanics

NASA Astrophysics Data System (ADS)

Madeo, Angela; Neff, Patrizio; Aifantis, Elias C.; Barbagallo, Gabriele; d'Agostino, Marco Valerio

2017-02-01

In this paper, the role of gradient micro-inertia terms η ¯ ∥ ∇ u,t∥2 and free micro-inertia terms η ∥P,t∥2 is investigated to unveil their respective effects on the dynamic behaviour of band-gap metamaterials. We show that the term η ¯ ∥ ∇ u,t∥2 alone is only able to disclose relatively simplified dispersive behaviour. On the other hand, the term η ∥P,t∥2 alone describes the full complex behaviour of band-gap metamaterials. A suitable mixing of the two micro-inertia terms allows us to describe a new feature of the relaxed-micromorphic model, i.e. the description of a second band-gap occurring for higher frequencies. We also show that a split of the gradient micro-inertia η ¯ ∥ ∇ u,t∥2, in the sense of Cartan-Lie decomposition of matrices, allows us to flatten separately the longitudinal and transverse optic branches, thus giving us the possibility of a second band-gap. Finally, we investigate the effect of the gradient inertia η ¯ ∥ ∇ u,t∥2 on more classical enriched models such as the Mindlin-Eringen and the internal variable ones. We find that the addition of such a gradient micro-inertia allows for the onset of one band-gap in the Mindlin-Eringen model and three band-gaps in the internal variable model. In this last case, however, non-local effects cannot be accounted for, which is a too drastic simplification for most metamaterials. We conclude that, even when adding gradient micro-inertia terms, the relaxed micromorphic model remains the best performing one, among the considered enriched models, for the description of non-local band-gap metamaterials.

On the role of micro-inertia in enriched continuum mechanics

PubMed Central

Neff, Patrizio; Aifantis, Elias C.; Barbagallo, Gabriele; d’Agostino, Marco Valerio

2017-01-01

In this paper, the role of gradient micro-inertia terms η¯∥ ∇u,t∥2 and free micro-inertia terms η∥P,t∥2 is investigated to unveil their respective effects on the dynamic behaviour of band-gap metamaterials. We show that the term η¯∥ ∇u,t∥2 alone is only able to disclose relatively simplified dispersive behaviour. On the other hand, the term η∥P,t∥2 alone describes the full complex behaviour of band-gap metamaterials. A suitable mixing of the two micro-inertia terms allows us to describe a new feature of the relaxed-micromorphic model, i.e. the description of a second band-gap occurring for higher frequencies. We also show that a split of the gradient micro-inertia η¯∥ ∇u,t∥2, in the sense of Cartan–Lie decomposition of matrices, allows us to flatten separately the longitudinal and transverse optic branches, thus giving us the possibility of a second band-gap. Finally, we investigate the effect of the gradient inertia η¯∥ ∇u,t∥2 on more classical enriched models such as the Mindlin–Eringen and the internal variable ones. We find that the addition of such a gradient micro-inertia allows for the onset of one band-gap in the Mindlin–Eringen model and three band-gaps in the internal variable model. In this last case, however, non-local effects cannot be accounted for, which is a too drastic simplification for most metamaterials. We conclude that, even when adding gradient micro-inertia terms, the relaxed micromorphic model remains the best performing one, among the considered enriched models, for the description of non-local band-gap metamaterials. PMID:28293136

Low-bandgap mixed tin–lead iodide perovskite absorbers with long carrier lifetimes for all-perovskite tandem solar cells

DOE PAGES

Zhao, Dewei; Yu, Yue; Wang, Changlei; ...

2017-03-01

Tandem solar cells using only metal-halide perovskite sub-cells are an attractive choice for next-generation solar cells. However, the progress in developing efficient all-perovskite tandem solar cells has been hindered by the lack of high-performance low-bandgap perovskite solar cells. Here in this paper, we report efficient mixed tin-lead iodide low-bandgap (~1.25 eV) perovskite solar cells with open-circuit voltages up to 0.85 V and over 70% external quantum efficiencies in the infrared wavelength range of 700-900 nm, delivering a short-circuit current density of over 29 mA cm -2 and demonstrating suitability for bottom-cell applications in all-perovskite tandem solar cells. Our low-bandgap perovskitemore » solar cells achieve a maximum power conversion efficiency of 17.6% and a certified efficiency of 17.01% with a negligible current-voltage hysteresis. Finally, when mechanically stacked with a ~1.58 eV bandgap perovskite top cell, our best all-perovskite 4-terminal tandem solar cell shows a steady-state efficiency of 21.0%.« less

A note on anomalous band-gap variations in semiconductors with temperature

NASA Astrophysics Data System (ADS)

Chakraborty, P. K.; Mondal, B. N.

2018-03-01

An attempt is made to theoretically study the band-gap variations (ΔEg) in semiconductors with temperature following the works, did by Fan and O'Donnell et al. based on thermodynamic functions. The semiconductor band-gap reflects the bonding energy. An increase in temperature changes the chemical bondings, and electrons are promoted from valence band to conduction band. In their analyses, they made several approximations with respect to temperature and other fitting parameters leading to real values of band-gap variations with linear temperature dependences. In the present communication, we have tried to re-analyse the works, specially did by Fan, and derived an analytical model for ΔEg(T). Because, it was based on the second-order perturbation technique of thermodynamic functions. Our analyses are made without any approximations with respect to temperatures and other fitting parameters mentioned in the text, leading to a complex functions followed by an oscillating nature of the variations of ΔEg. In support of the existence of the oscillating energy band-gap variations with temperature in a semiconductor, possible physical explanations are provided to justify the experimental observation for various materials.

Low-bandgap mixed tin–lead iodide perovskite absorbers with long carrier lifetimes for all-perovskite tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Dewei; Yu, Yue; Wang, Changlei

Tandem solar cells using only metal-halide perovskite sub-cells are an attractive choice for next-generation solar cells. However, the progress in developing efficient all-perovskite tandem solar cells has been hindered by the lack of high-performance low-bandgap perovskite solar cells. Here in this paper, we report efficient mixed tin-lead iodide low-bandgap (~1.25 eV) perovskite solar cells with open-circuit voltages up to 0.85 V and over 70% external quantum efficiencies in the infrared wavelength range of 700-900 nm, delivering a short-circuit current density of over 29 mA cm -2 and demonstrating suitability for bottom-cell applications in all-perovskite tandem solar cells. Our low-bandgap perovskitemore » solar cells achieve a maximum power conversion efficiency of 17.6% and a certified efficiency of 17.01% with a negligible current-voltage hysteresis. Finally, when mechanically stacked with a ~1.58 eV bandgap perovskite top cell, our best all-perovskite 4-terminal tandem solar cell shows a steady-state efficiency of 21.0%.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Gang; Kong, Lingping; Gong, Jue

Bond length and bond angle exhibited by valence electrons is essential to the core of chemistry. Using lead-based organic–inorganic perovskite compounds as an exploratory platform, it is demonstrated that the modulation of valence electrons by compression can lead to discovery of new properties of known compounds. Yet, despite its unprecedented progress, further efficiency boost of lead-based organic–inorganic perovskite solar cells is hampered by their wider bandgap than the optimum value according to the Shockley–Queisser limit. By modulating the valence electron wavefunction with modest hydraulic pressure up to 2.1 GPa, the optimized bandgap for single-junction solar cells in lead-based perovskites, formore » the first time, is achieved by narrowing the bandgap of formamidinium lead triiodide (HC(NH 2) 2PbI 3) from 1.489 to 1.337 eV. Strikingly, such bandgap narrowing is partially retained after the release of pressure to ambient, and the bandgap narrowing is also accompanied with double-prolonged carrier lifetime. With First-principles simulation, this work opens a new dimension in basic chemical understanding of structural photonics and electronics and paves an alternative pathway toward better photovoltaic materials-by-design.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Gang; Kong, Lingping; Gong, Jue

Bond length and bond angle exhibited by valence electrons is essential to the core of chemistry. Using lead-based organic–inorganic perovskite compounds as an exploratory platform, it is demonstrated that the modulation of valence electrons by compression can lead to discovery of new properties of known compounds. Yet, despite its unprecedented progress, further efficiency boost of lead-based organic–inorganic perovskite solar cells is hampered by their wider bandgap than the optimum value according to the Shockley–Queisser limit. By modulating the valence electron wavefunction with modest hydraulic pressure up to 2.1 GPa, the optimized bandgap for single-junction solar cells in lead-based perovskites, formore » the first time, is achieved by narrowing the bandgap of formamidinium lead triiodide (HC(NH2)2PbI3) from 1.489 to 1.337 eV. Strikingly, such bandgap narrowing is partially retained after the release of pressure to ambient, and the bandgap narrowing is also accompanied with double-prolonged carrier lifetime. With First-principles simulation, this work opens a new dimension in basic chemical understanding of structural photonics and electronics and paves an alternative pathway toward better photovoltaic materials-by-design.« less

LETTER TO THE EDITOR: Green emission and bandgap narrowing due to two-photon excitation in thin film CdS formed by spray pyrolysis

NASA Astrophysics Data System (ADS)

Ullrich, B.; Schroeder, R.

2001-08-01

Thin (10 µm) film CdS on Pyrex® formed by spray pyrolysis is excited below the gap at 804 nm with 200 fs laser pulses at room temperature. Excitation intensities up to 250 GW cm-2 evoke green bandgap emission due to two-photon transitions. This two-photon photoluminescence does not show a red emission contribution in contrast to the single-photon excited emission, which is dominated by broad emission in the red spectral range. It is demonstrated that two-photon excitation causes photo-induced bandgap narrowing due to Debye screening. At 250 GW cm-2 bandgap narrowing of 47 meV is observed, which corresponds to an excited electron density of 1.6×1018 cm-3.

Band-gap corrected density functional theory calculations for InAs/GaSb type II superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jianwei; Zhang, Yong

2014-12-07

We performed pseudopotential based density functional theory (DFT) calculations for GaSb/InAs type II superlattices (T2SLs), with bandgap errors from the local density approximation mitigated by applying an empirical method to correct the bulk bandgaps. Specifically, this work (1) compared the calculated bandgaps with experimental data and non-self-consistent atomistic methods; (2) calculated the T2SL band structures with varying structural parameters; (3) investigated the interfacial effects associated with the no-common-atom heterostructure; and (4) studied the strain effect due to lattice mismatch between the two components. This work demonstrates the feasibility of applying the DFT method to more exotic heterostructures and defect problemsmore » related to this material system.« less

Machine learning bandgaps of double perovskites

PubMed Central

Pilania, G.; Mannodi-Kanakkithodi, A.; Uberuaga, B. P.; Ramprasad, R.; Gubernatis, J. E.; Lookman, T.

2016-01-01

The ability to make rapid and accurate predictions on bandgaps of double perovskites is of much practical interest for a range of applications. While quantum mechanical computations for high-fidelity bandgaps are enormously computation-time intensive and thus impractical in high throughput studies, informatics-based statistical learning approaches can be a promising alternative. Here we demonstrate a systematic feature-engineering approach and a robust learning framework for efficient and accurate predictions of electronic bandgaps of double perovskites. After evaluating a set of more than 1.2 million features, we identify lowest occupied Kohn-Sham levels and elemental electronegativities of the constituent atomic species as the most crucial and relevant predictors. The developed models are validated and tested using the best practices of data science and further analyzed to rationalize their prediction performance. PMID:26783247

Electroabsorption optical modulator

DOEpatents

Skogen, Erik J.

2017-11-21

An electroabsorption modulator incorporates waveguiding regions along the length of the modulator that include quantum wells where at least two of the regions have quantum wells with different bandgaps. In one embodiment of the invention, the regions are arranged such that the quantum wells have bandgaps with decreasing bandgap energy along the length of the modulator from the modulator's input to its output. The bandgap energy of the quantum wells may be decreased in discrete steps or continuously. Advantageously, such an arrangement better distributes the optical absorption as well as the carrier density along the length of the modulator. Further advantageously, the modulator may handle increased optical power as compared with prior art modulators of similar dimensions, which allows for improved link gain when the optical modulator is used in an analog optical communication link.

Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy

NASA Astrophysics Data System (ADS)

Evans, D. A.; McGlynn, A. G.; Towlson, B. M.; Gunn, M.; Jones, D.; Jenkins, T. E.; Winter, R.; Poolton, N. R. J.

2008-02-01

Using synchrotron-based luminescence excitation spectroscopy in the energy range 4-20 eV at 8 K, the indirect Γ-X optical band-gap transition in cubic boron nitride is determined as 6.36 ± 0.03 eV, and the quasi-direct band-gap energy of hexagonal boron nitride is determined as 5.96 ± 0.04 eV. The composition and structure of the materials are self-consistently established by optically detected x-ray absorption spectroscopy, and both x-ray diffraction and Raman measurements on the same samples give independent confirmation of their chemical and structural purity: together, the results are therefore considered as providing definitive measurements of the optical band-gap energies of the two materials.

IFN Regulatory Factor 8 Represses GM-CSF Expression in T cells to Affect Myeloid Cell Lineage Differentiation

PubMed Central

Paschall, Amy V.; Zhang, Ruihua; Qi, Chen-Feng; Bardhan, Kankana; Peng, Liang; Lu, Geming; Yang, Jianjun; Merad, Miriam; McGaha, Tracy; Zhou, Gang; Mellor, Andrew; Abrams, Scott I.; Morse, Herbert C.; Ozato, Keiko; Xiong, Huabao; Liu, Kebin

2015-01-01

During hematopoiesis, hematopoietic stem cells constantly differentiate into granulocytes and macrophages via a distinct differentiation program that is tightly controlled by myeloid lineage-specific transcription factors. Mice with a null mutation of IFN Regulatory Factor 8 (IRF8) accumulate CD11b+Gr1+ myeloid cells that phenotypically and functionally resemble tumor-induced myeloid-derived suppressor cells (MDSCs), indicating an essential role of IRF8 in myeloid cell lineage differentiation. However, IRF8 is expressed in various types of immune cells and whether IRF8 functions intrinsically or extrinsically in regulation of myeloid cell lineage differentiation is not fully understood. Here we report an intriguing finding that although IRF8-deficient mice exhibit deregulated myeloid cell differentiation and resultant accumulation of CD11b+Gr1+ MDSCs, surprisingly, mice with IRF8 deficiency only in myeloid cells exhibit no abnormal myeloid cell lineage differentiation. Instead, mice with IRF8 deficiency only in T cells exhibited deregulated myeloid cell differentiation and MDSC accumulation. We further demonstrated that IRF8-deficient T cells exhibit elevated GM-CSF expression and secretion. Treatment of mice with GM-CSF increased MDSC accumulation, and adoptive transfer of IRF8-deficient T cells, but not GM-CSF-deficient T cells, increased MDSC accumulation in the recipient chimeric mice. Moreover, overexpression of IRF8 decreased GM-CSF expression in T cells. Our data determine that in addition to its intrinsic function as an apoptosis regulator in myeloid cells, IRF8 also acts extrinsically to represses GM-CSF expression in T cells to control myeloid cell lineage differentiation, revealing a novel mechanism that the adaptive immune component of the immune system regulates the innate immune cell myelopoiesis in vivo. PMID:25646302

Atmospheric Transport Modelling and Radionuclide Analysis for the NPE 2015 scenario

NASA Astrophysics Data System (ADS)

Ross, J. Ole; Bollhöfer, Andreas; Heidmann, Verena; Krais, Roman; Schlosser, Clemens; Gestermann, Nicolai; Ceranna, Lars

2017-04-01

The Comprehensive Nuclear-Test-Ban Treaty (CTBT) prohibits all kinds of nuclear explosions. The International Monitoring System (IMS) is in place and at about 90% complete to verify compliance with the CTBT. The stations of the waveform technologies are capable to detect seismic, hydro-acoustic and infrasonic signals for detection, localization, and characterization of explosions. For practicing Comprehensive Nuclear-Test-Ban Treaty (CTBT) verification procedures and interplay between the International Data Centre (IDC) and National Data Centres (NDC), prepardness exercises (NPE) are regularly performed with selected events of fictitious CTBT-violation. The German NDC's expertise for radionuclide analyses and operation of station RN33 is provided by the Federal Office for Radiation Protection (BfS) while Atmospheric Transport Modelling (ATM) for CTBT purposes is performed at the Federal Institute for Geosciences and Natural Resources (BGR) for the combination of the radionuclide findings with waveform evidence. The radionuclide part of the NPE 2015 scenario is tackled in a joint effort by BfS and BGR. First, the NPE 2015 spectra are analysed, fission products are identified, and respective activity concentrations are derived. Special focus is on isotopic ratios which allow for source characterization and event timing. For atmospheric backtracking the binary coincidence method is applied for both, SRS fields from IDC and WMO-RSMC, and for in-house backward simulations in higher resolution for the first affected samples. Results are compared with the WebGrape PSR and the spatio-temporal domain with high atmospheric release probability is determined. The ATM results together with the radionuclide fingerprint are used for identification of waveform candidate events. Comparative forward simulations of atmospheric dispersion for candidate events are performed. Finally the overall consistency of various source scenarios is assessed and a fictitious government briefing on the findings is given.

Coupled Multi-physical Simulations for the Assessment of Nuclear Waste Repository Concepts: Modeling, Software Development and Simulation

NASA Astrophysics Data System (ADS)

Massmann, J.; Nagel, T.; Bilke, L.; Böttcher, N.; Heusermann, S.; Fischer, T.; Kumar, V.; Schäfers, A.; Shao, H.; Vogel, P.; Wang, W.; Watanabe, N.; Ziefle, G.; Kolditz, O.

2016-12-01

As part of the German site selection process for a high-level nuclear waste repository, different repository concepts in the geological candidate formations rock salt, clay stone and crystalline rock are being discussed. An open assessment of these concepts using numerical simulations requires physical models capturing the individual particularities of each rock type and associated geotechnical barrier concept to a comparable level of sophistication. In a joint work group of the Helmholtz Centre for Environmental Research (UFZ) and the German Federal Institute for Geosciences and Natural Resources (BGR), scientists of the UFZ are developing and implementing multiphysical process models while BGR scientists apply them to large scale analyses. The advances in simulation methods for waste repositories are incorporated into the open-source code OpenGeoSys. Here, recent application-driven progress in this context is highlighted. A robust implementation of visco-plasticity with temperature-dependent properties into a framework for the thermo-mechanical analysis of rock salt will be shown. The model enables the simulation of heat transport along with its consequences on the elastic response as well as on primary and secondary creep or the occurrence of dilatancy in the repository near field. Transverse isotropy, non-isothermal hydraulic processes and their coupling to mechanical stresses are taken into account for the analysis of repositories in clay stone. These processes are also considered in the near field analyses of engineered barrier systems, including the swelling/shrinkage of the bentonite material. The temperature-dependent saturation evolution around the heat-emitting waste container is described by different multiphase flow formulations. For all mentioned applications, we illustrate the workflow from model development and implementation, over verification and validation, to repository-scale application simulations using methods of high performance computing.

Initial Effects of Differently Treated Biogas Residues from Municipal and Industrial Wastes on Spring Barley Yield Formation

PubMed Central

Prays, Nadia; Kaupenjohann, Martin

2016-01-01

Soil application of biogas residues (BGRs) is important for closing nutrient cycles. This study examined the efficiency and impact on yields and yield formation of solid-liquid separated residues from biodegradable municipal and industrial wastes (bio-waste) in comparison to complete BGRs, nitrification inhibitor, agricultural BGRs, mineral fertilizer and unfertilized plots as control. The experiment was set up as a randomized block design on silt loam Cambisol. Biogas residues from four biogas plants were evaluated. Plants per m², ears per plant, grains per ear and thousand grain weight (TGW) were measured at harvest. Fertilization with BGRs resulted in similar biomass yields compared with mineral fertilizer. Mineral fertilizer (71 dt/ha) and plots fertilized with liquid fraction (59–62 dt/ha) indicated a trend to higher yields than solid fraction or complete BGR due to its high ammonia content. Liquid fractions and fraction with nitrification inhibitor induced fewer plants per m² than corresponding solid and complete variants due to a potential phytotoxicity of high NH4-N concentration during germination. However, barley on plots fertilized with liquid fraction compensated the disadvantages at the beginning during the vegetation period and induced higher grain yields than solid fraction. This was attributable to a higher number of ears per plant and grains per ear. In conclusion, BGRs from biodegradable municipal and industrial wastes can be used for soil fertilization and replace considerable amounts of mineral fertilizer. Our study showed that direct application of the liquid fraction of BGR is the most suitable strategy to achieve highest grain yields. Nevertheless potential phytotoxicity of the high NH4-N concentration in the liquid fraction should be considered. PMID:27116355

Electronic excitations and chemistry in Nitromethane and HMX

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reed, E J; Manaa, M R; Joannopoulos, J D

2001-06-19

The nature of electronic excitations in crystalline solid nitromethane under conditions of shock loading and static compression are examined. Density functional theory calculations are used to determine the crystal bandgap under hydrostatic stress, uniaxial strain, and shear strain. Bandgap lowering under uniaxial strain due to molecular defects and vacancies is considered. In all cases, the bandgap is not lowered enough to produce a significant population of excited states in the crystal. Preliminary simulations on the formation of detonation product molecules from HMX are discussed.

Effect of background dielectric on TE-polarized photonic bandgap of metallodielectric photonic crystals using Dirichlet-to-Neumann map method.

PubMed

Sedghi, Aliasghar; Rezaei, Behrooz

2016-11-20

Using the Dirichlet-to-Neumann map method, we have calculated the photonic band structure of two-dimensional metallodielectric photonic crystals having the square and triangular lattices of circular metal rods in a dielectric background. We have selected the transverse electric mode of electromagnetic waves, and the resulting band structures showed the existence of photonic bandgap in these structures. We theoretically study the effect of background dielectric on the photonic bandgap.

Stable low-bandgap Pb-Sn binary perovskites for tandem solar cells

DOE PAGES

Yang, Zhibin; Rajagopal, Adharsh; Chueh, Chu -Chen; ...

2016-08-22

A low-bandgap (1.33 eV) Sn-based MA 0.5FA 0.5Pb 0.75Sn 0.25I 3 perovskite is developed via combined compositional, process, and interfacial engineering. It can deliver a high power conversion efficiency (PCE) of 14.19%. Lastly, a four-terminal all-perovskite tandem solar cell is demonstrated by combining this low-bandgap cell with a semitransparent MAPbI 3 cell to achieve a high efficiency of 19.08%.

Next-generation all-silica coatings for UV applications

NASA Astrophysics Data System (ADS)

Melninkaitis, A.; Grinevičiūtė, L.; Abromavičius, G.; Mažulė, L.; Smalakys, L.; Pupka, E.; Š čiuka, M.; Buzelis, R.; Kičas, S.

2017-11-01

Band-gap and refractive index are known as fundamental properties determining intrinsic optical resistance of multilayer dielectric coatings. By considering this fact we propose novel approach to manufacturing of interference thin films, based on artificial nano-structures of modulated porosity embedded in high band-gap matrix. Next generation all-silica mirrors were prepared by GLancing Angle Deposition (GLAD) using electron beam evaporation. High reflectivity (HR) was achieved by tailoring the porosity of highly resistant silica material during the thin film deposition process. Furthermore, the proposed approach was also demonstrated to work well in case of anti-reflection (AR) coatings. Conventional HR HfO2 and SiO2 as well as AR Al2O3 and SiO2 multilayers produced by Ion Beam Sputtering (IBS) were used as reference coatings. Damage performance of experimental coatings was also analyzed. All-silica based GLAD approach resulted in significant improvement of intrinsic laser damage resistance properties if compared to conventional coatings. Besides laser damage testing, other characteristics of experimental coatings are analyzed and discussed - reflectance, surface roughness and optical scattering. We believe that reported concept can be expanded to virtually any design of thin film coatings thus opening a new way of next generation highly resistant thin films well suited for high power and UV laser applications.

Screening of inorganic wide-bandgap p-type semiconductors for high performance hole transport layers in organic photovoltaic devices

NASA Astrophysics Data System (ADS)

Ginley, David; Zakutayev, Andriy; Garcia, Andreas; Widjonarko, Nicodemus; Ndione, Paul; Sigdel, Ajaya; Parilla, Phillip; Olson, Dana; Perkins, John; Berry, Joseph

2011-03-01

We will report on the development of novel inorganic hole transport layers (HTL) for organic photovoltaics (OPV). All the studied materials belong to the general class of wide-bandgap p-type oxide semiconductors. Potential candidates suitable for HTL applications include SnO, NiO, Cu2O (and related CuAlO2, CuCrO2, SrCu2O4 etc) and Co3O4 (and related ZnCo2O4, NiCo2O4, MgCo2O4 etc.). Materials have been optimized by high-throughput combinatorial approaches. The thin films were deposited by RF sputtering and pulsed laser deposition at ambient and elevated temperatures. Performance of the inorganic HTLs and that of the reference organic PEDOT:PSS HTL were compared by measuring the power conversion efficiencies and spectral responses of the P3HT/PCBM- and PCDTBT/PCBM-based OPV devices. Preliminary results indicate that Co3O4-based HTLs have performance comparable to that of our previously reported NiOs and PEDOT:PSS HTLs, leading to a power conversion efficiency of about 4 percent. The effect of composition and work function of the ternary materials on their performance in OPV devices is under investigation.

Electronic Properties of SiNTs Under External Electric and Magnetic Fields Using the Tight-Binding Method

NASA Astrophysics Data System (ADS)

Chegel, Raad; Behzad, Somayeh

2014-02-01

We investigated the electronic properties of silicon nanotubes (SiNTs) under external transverse electric fields and axial magnetic fields using the tight-binding approximation. It was found that, after switching on the electric and magnetic fields, band modifications such as distortion of degeneracy, change in energy dispersion and subband spacing, and bandgap size reduction occur. The bandgap of silicon gear-like nanotubes (Si g-NTs) decreases linearly with increasing electric field strength, but the bandgap for silicon hexagonal nanotubes (Si h-NTs) first increases and then decreases (metallic) or first remains constant and then decreases (semiconducting). Our results show that the bandgap of Si h-NTs is very sensitive to both electric and magnetic fields, unlike Si g-NTs, which are more sensitive to electric than magnetic fields.

Ultra-sensitive pressure dependence of bandgap of rutile-GeO2 revealed by many body perturbation theory.

PubMed

Samanta, Atanu; Jain, Manish; Singh, Abhishek K

2015-08-14

The reported values of bandgap of rutile GeO2 calculated by the standard density functional theory within local-density approximation (LDA)/generalized gradient approximation (GGA) show a wide variation (∼2 eV), whose origin remains unresolved. Here, we investigate the reasons for this variation by studying the electronic structure of rutile-GeO2 using many-body perturbation theory within the GW framework. The bandgap as well as valence bandwidth at Γ-point of rutile phase shows a strong dependence on volume change, which is independent of bandgap underestimation problem of LDA/GGA. This strong dependence originates from a change in hybridization among O-p and Ge-(s and p) orbitals. Furthermore, the parabolic nature of first conduction band along X-Γ-M direction changes towards a linear dispersion with volume expansion.

Hybridization bandgap induced by an electrical resonance in piezoelectric metamaterial plates

NASA Astrophysics Data System (ADS)

Kherraz, N.; Haumesser, L.; Levassort, F.; Benard, P.; Morvan, B.

2018-03-01

We demonstrate numerically and experimentally the opening of a locally resonant bandgap in an active phononic crystal (PC) made of a homogeneous piezoelectric plate covered by a 1D periodic array of thin electrodes connected to inductive shunts. The application of periodic electrical boundary conditions (EBCs) enables an at will tailoring of the dispersion properties of the PC plate, thus leading to a control of the dispersion of the propagating guided elastic waves in the plate. Depending on the nature of the EBCs, several bandgaps open up, the most important being a Hybridization Bandgap (HBG) in the subwavelength regime. The PC behaves as a locally resonant metamaterial. The HBG originates from the interaction of propagating elastic waves (Lamb modes) with an electrical resonant mode whose dispersion can be effectively described through an equivalent transmission line model.

Emergence of an enslaved phononic bandgap in a non-equilibrium pseudo-crystal.

PubMed

Bachelard, Nicolas; Ropp, Chad; Dubois, Marc; Zhao, Rongkuo; Wang, Yuan; Zhang, Xiang

2017-08-01

Material systems that reside far from thermodynamic equilibrium have the potential to exhibit dynamic properties and behaviours resembling those of living organisms. Here we realize a non-equilibrium material characterized by a bandgap whose edge is enslaved to the wavelength of an external coherent drive. The structure dynamically self-assembles into an unconventional pseudo-crystal geometry that equally distributes momentum across elements. The emergent bandgap is bestowed with lifelike properties, such as the ability to self-heal to perturbations and adapt to sudden changes in the drive. We derive an exact analytical solution for both the spatial organization and the bandgap features, revealing the mechanism for enslavement. This work presents a framework for conceiving lifelike non-equilibrium materials and emphasizes the potential for the dynamic imprinting of material properties through external degrees of freedom.

Emergence of an enslaved phononic bandgap in a non-equilibrium pseudo-crystal

NASA Astrophysics Data System (ADS)

Bachelard, Nicolas; Ropp, Chad; Dubois, Marc; Zhao, Rongkuo; Wang, Yuan; Zhang, Xiang

2017-08-01

Material systems that reside far from thermodynamic equilibrium have the potential to exhibit dynamic properties and behaviours resembling those of living organisms. Here we realize a non-equilibrium material characterized by a bandgap whose edge is enslaved to the wavelength of an external coherent drive. The structure dynamically self-assembles into an unconventional pseudo-crystal geometry that equally distributes momentum across elements. The emergent bandgap is bestowed with lifelike properties, such as the ability to self-heal to perturbations and adapt to sudden changes in the drive. We derive an exact analytical solution for both the spatial organization and the bandgap features, revealing the mechanism for enslavement. This work presents a framework for conceiving lifelike non-equilibrium materials and emphasizes the potential for the dynamic imprinting of material properties through external degrees of freedom.

Machine learning bandgaps of double perovskites

DOE PAGES

Pilania, G.; Mannodi-Kanakkithodi, A.; Uberuaga, B. P.; ...

2016-01-19

The ability to make rapid and accurate predictions on bandgaps of double perovskites is of much practical interest for a range of applications. While quantum mechanical computations for high-fidelity bandgaps are enormously computation-time intensive and thus impractical in high throughput studies, informatics-based statistical learning approaches can be a promising alternative. Here we demonstrate a systematic feature-engineering approach and a robust learning framework for efficient and accurate predictions of electronic bandgaps of double perovskites. After evaluating a set of more than 1.2 million features, we identify lowest occupied Kohn-Sham levels and elemental electronegativities of the constituent atomic species as the mostmore » crucial and relevant predictors. As a result, the developed models are validated and tested using the best practices of data science and further analyzed to rationalize their prediction performance.« less

Photonic Bandgap (PBG) Shielding Technology

NASA Technical Reports Server (NTRS)

Bastin, Gary L.

2007-01-01

Photonic Bandgap (PBG) shielding technology is a new approach to designing electromagnetic shielding materials for mitigating Electromagnetic Interference (EM!) with small, light-weight shielding materials. It focuses on ground planes of printed wiring boards (PWBs), rather than on components. Modem PSG materials also are emerging based on planar materials, in place of earlier, bulkier, 3-dimensional PBG structures. Planar PBG designs especially show great promise in mitigating and suppressing EMI and crosstalk for aerospace designs, such as needed for NASA's Constellation Program, for returning humans to the moon and for use by our first human visitors traveling to and from Mars. Photonic Bandgap (PBG) materials are also known as artificial dielectrics, meta-materials, and photonic crystals. General PBG materials are fundamentally periodic slow-wave structures in I, 2, or 3 dimensions. By adjusting the choice of structure periodicities in terms of size and recurring structure spacings, multiple scatterings of surface waves can be created that act as a forbidden energy gap (i.e., a range of frequencies) over which nominally-conductive metallic conductors cease to be a conductor and become dielectrics. Equivalently, PBG materials can be regarded as giving rise to forbidden energy gaps in metals without chemical doping, analogous to electron bandgap properties that previously gave rise to the modem semiconductor industry 60 years ago. Electromagnetic waves cannot propagate over bandgap regions that are created with PBG materials, that is, over frequencies for which a bandgap is artificially created through introducing periodic defects

Buffer Layer Effects on Tandem InGaAs TPV Devices

NASA Technical Reports Server (NTRS)

Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

2004-01-01

Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of configurations both with and without buffer layers. All structures were characterized by reciprocal space x-ray diffraction to determine epilayer composition and residual strain. Electrical characterization of the devices was performed to examine the effect of the buffer on the device performance. The effect of the buffer structure depends upon where it is positioned. When near the emitter region, a 2.6x increase in dark current was measured, whereas no change in dark current was observed when it was near the base region.

The density matrix method in photonic bandgap and antiferromagnetic materials

NASA Astrophysics Data System (ADS)

Barrie, Scott B.

In this thesis, a theory for dispersive polaritonic bandgap (DPBG) and photonic bandgap (PBG) materials is developed. An ensemble of multi-level nanoparticles, such as non-interacting two-, three- and four-level atoms doped in DPBG and PBG materials is considered. The optical properties of these materials such as spontaneous emission, line broadening, fluorescence and narrowing of the natural linewidth have been studied using the density matrix method. Numerical simulations for these properties have been performed for the DPBG materials SiC and InAs, and for a PBG material with a 20 percent gap-to-midgap ratio. When a three-level nanoparticle is doped into a DPBG material, it is predicted that one or two bound states exist when one or both resonance energies, respectively, lie in the bandgap. It is shown when a resonance energy lies below the bandgap, its spectral density peak weakens and broadens as the resonance energy increases to the lower band edge. For the first time it is predicted that when a nanoparticle's resonance energy lies above the bandgap, its spectral density peak weakens and broadens as the resonance energy increases. A relation is also found between spectral structure and gap-to-midgap ratios. The dressed states of a two-level atom doped into a DPBG material under the influence of an intense monochromatic laser field are examined. The splitting of the dressed state energies is calculated, and it is predicted that the splitting depends on the polariton density of states and the Rabi frequency of laser field. The fluoresence is also examined, and for the first time two distinct control processes are found for the transition from one peak to three peaks. It was previously known that the Rabi frequency controlled the Stark effect, but this thesis predicts that the local of the peak with respect to the optical bandgap can cause a transition from one to three peaks even with a weak Rabi frequency. The transient linewidth narrowing of PBG crystal emission peaks doped with four-level atoms is studied. It is found that linewidth narrowing is only dependent upon time delay when the resonance energy is not near a band edge. This is a new discovery. The density matrix method is employed to find the critical magnetic field at which spin flopping occurs in antiferromagnetic high temperature superconductors. It is found that this magnetic field depends upon the temperature, the anisotropy parameter and the doping concentration. Results are calculated for 1-2-3 HTSCs. Keywords. Quantum Optics, Density Matrix, Photonic Bandgap Materials, Dispersive Polaritonic Bandgap Materials, Antiferromagnets.

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Vanadium supersaturated silicon system: a theoretical and experimental approach

NASA Astrophysics Data System (ADS)

Garcia-Hemme, Eric; García, Gregorio; Palacios, Pablo; Montero, Daniel; García-Hernansanz, Rodrigo; Gonzalez-Diaz, Germán; Wahnon, Perla

2017-12-01

The effect of high dose vanadium ion implantation and pulsed laser annealing on the crystal structure and sub-bandgap optical absorption features of V-supersaturated silicon samples has been studied through the combination of experimental and theoretical approaches. Interest in V-supersaturated Si focusses on its potential as a material having a new band within the Si bandgap. Rutherford backscattering spectrometry measurements and formation energies computed through quantum calculations provide evidence that V atoms are mainly located at interstitial positions. The response of sub-bandgap spectral photoconductance is extended far into the infrared region of the spectrum. Theoretical simulations (based on density functional theory and many-body perturbation in GW approximation) bring to light that, in addition to V atoms at interstitial positions, Si defects should also be taken into account in explaining the experimental profile of the spectral photoconductance. The combination of experimental and theoretical methods provides evidence that the improved spectral photoconductance up to 6.2 µm (0.2 eV) is due to new sub-bandgap transitions, for which the new band due to V atoms within the Si bandgap plays an essential role. This enables the use of V-supersaturated silicon in the third generation of photovoltaic devices.

A first principle study of graphene functionalized with hydroxyl, nitrile, or methyl groups

NASA Astrophysics Data System (ADS)

Barhoumi, M.; Rocca, D.; Said, M.; Lebègue, S.

2017-01-01

By means of ab initio calculations, we study the functionalization of graphene by different chemical groups such as hydroxyl, nitrile, or methyl. Two extreme cases of functionalization are considered: a single group on a supercell of graphene and a sheet of graphene fully functionalized. Once the equilibrium geometry is obtained by density functional theory, we found that the systems are metallic when a single group is attached to the sheet of graphene. With the exception of the nitrile functionalized boat configuration, a large bandgap is obtained at full coverage. Specifically, by using the GW approximation, our calculated bandgaps are direct and range between 5.0 and 5.5 eV for different configurations of hydroxyl functionalized graphene. An indirect GW bandgap of 6.50 eV was found in nitrile functionalized graphene while the methyl group functionalization leads to a direct bandgap with a value of 4.50 eV. Since in the two limiting cases of minimal and full coverage, the electronic structure changes drastically from a metal to a wide bandgap semiconductor, a series of intermediate states might be expected by tuning the amount of functionalization with these different groups.

Bandgap control and optical properties of β-Si3N4 by single- and co-doping from a first-principles simulation

NASA Astrophysics Data System (ADS)

Lu, Xuefeng; Gao, Xu; Ren, Junqiang; Li, Cuixia; Guo, Xin; Wei, Yupeng; La, Peiqing

2018-06-01

Bandgap tailoring of β-Si3N4 is performed by single and co-doping by using density functional theory (DFT) of PBE functional and plane-wave pseudopotential method. The results reveal that a direct bandgap transfers into an indirect one when single-doped with As element. Also, a considerate decrease of bandgap to 0.221 eV and 0.315 eV is present for Al-P and As-P co-doped systems, respectively, exhibiting a representative semiconductor property that is characteristic for a narrower bandgap. Compared with other doped systems, Al-doped system with formation energy of 2.67 eV is present for a more stable structure. From charge density difference (CDD) maps, it is found that the blue area between co-doped atoms increases, illustrating an enhancement of covalent property for Al-P and Al-As bonds. Moreover, a slightly obvious “Blue shift” phenomenon can be obtained in Al, Al-P and Al-As doped systems, indicating an enhanced capacity of responses to light, which contributes to the insight for broader applications with regard to photoelectric devices.

Spatial filtering with photonic crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maigyte, Lina; Staliunas, Kestutis; Institució Catalana de Recerca i Estudis Avançats

2015-03-15

Photonic crystals are well known for their celebrated photonic band-gaps—the forbidden frequency ranges, for which the light waves cannot propagate through the structure. The frequency (or chromatic) band-gaps of photonic crystals can be utilized for frequency filtering. In analogy to the chromatic band-gaps and the frequency filtering, the angular band-gaps and the angular (spatial) filtering are also possible in photonic crystals. In this article, we review the recent advances of the spatial filtering using the photonic crystals in different propagation regimes and for different geometries. We review the most evident configuration of filtering in Bragg regime (with the back-reflection—i.e., inmore » the configuration with band-gaps) as well as in Laue regime (with forward deflection—i.e., in the configuration without band-gaps). We explore the spatial filtering in crystals with different symmetries, including axisymmetric crystals; we discuss the role of chirping, i.e., the dependence of the longitudinal period along the structure. We also review the experimental techniques to fabricate the photonic crystals and numerical techniques to explore the spatial filtering. Finally, we discuss several implementations of such filters for intracavity spatial filtering.« less

Systematic Bandgap Engineering of Graphene Quantum Dots and Applications for Photocatalytic Water Splitting and CO2 Reduction.

PubMed

Yan, Yibo; Chen, Jie; Li, Nan; Tian, Jingqi; Li, Kaixin; Jiang, Jizhou; Liu, Jiyang; Tian, Qinghua; Chen, Peng

2018-04-24

Graphene quantum dots (GQDs), which is the latest addition to the nanocarbon material family, promise a wide spectrum of applications. Herein, we demonstrate two different functionalization strategies to systematically tailor the bandgap structures of GQDs whereby making them snugly suitable for particular applications. Furthermore, the functionalized GQDs with a narrow bandgap and intramolecular Z-scheme structure are employed as the efficient photocatalysts for water splitting and carbon dioxide reduction under visible light. The underlying mechanisms of our observations are studied and discussed.

Electronic bandstructure of semiconductor dilute bismide structures

NASA Astrophysics Data System (ADS)

Erucar, T.; Nutku, F.; Donmez, O.; Erol, A.

2017-02-01

In this work electronic band structure of dilute bismide GaAs/GaAs1-xBix quantum well structures with 1.8% and 3.75% bismuth compositions have been investigated both experimentally and theoretically. Photoluminescence (PL) measurements reveal that effective bandgap of the samples decreases approximately 65 meV per bismuth concentration. Temperature dependence of the effective bandgap is obtained to be higher for the sample with higher bismuth concentration. Moreover, both asymmetric characteristic at the low energy tail of the PL and full width at half maximum (FWHM) of PL peak increase with increasing bismuth composition as a result of increased Bi related defects located above valence band (VB). In order to explain composition dependence of the effective bandgap quantitatively, valence band anti-crossing (VBAC) model is used. Bismuth composition and temperature dependence of effective bandgap in a quantum well structure is modeled by solving Schrödinger equation and compared with experimental PL data.

Graded bandgap perovskite solar cells.

PubMed

Ergen, Onur; Gilbert, S Matt; Pham, Thang; Turner, Sally J; Tan, Mark Tian Zhi; Worsley, Marcus A; Zettl, Alex

2017-05-01

Organic-inorganic halide perovskite materials have emerged as attractive alternatives to conventional solar cell building blocks. Their high light absorption coefficients and long diffusion lengths suggest high power conversion efficiencies, and indeed perovskite-based single bandgap and tandem solar cell designs have yielded impressive performances. One approach to further enhance solar spectrum utilization is the graded bandgap, but this has not been previously achieved for perovskites. In this study, we demonstrate graded bandgap perovskite solar cells with steady-state conversion efficiencies averaging 18.4%, with a best of 21.7%, all without reflective coatings. An analysis of the experimental data yields high fill factors of ∼75% and high short-circuit current densities up to 42.1 mA cm -2 . The cells are based on an architecture of two perovskite layers (CH 3 NH 3 SnI 3 and CH 3 NH 3 PbI 3-x Br x ), incorporating GaN, monolayer hexagonal boron nitride, and graphene aerogel.

Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

NASA Astrophysics Data System (ADS)

Cui, Xiao; Zhang, Can; Liang, Song; Zhu, Hong-Liang; Hou, Lian-Ping

2014-04-01

Impurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/SiO2 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, photodetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172 nm is realized with an annealing condition of 750°C and 200s. The improved technique is promising for the fabrication of the active/passive optoelectronic components on a single wafer with simple process and low cost.

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E. (Inventor)

2014-01-01

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

In-line flat-top comb filter based on a cascaded all-solid photonic bandgap fiber intermodal interferometer.

PubMed

Geng, Youfu; Li, Xuejin; Tan, Xiaoling; Deng, Yuanlong; Yu, Yongqin

2013-07-15

In this paper, an in-line comb filter with flat-top spectral response is proposed and constructed based on a cascaded all-solid photonic bandgap fiber modal interferometer. It consists of two short pieces of all-solid photonic bandgap fiber and two standard single-mode fibers as lead fibers with core-offset splices between them. The theoretical and experimental results demonstrated that by employing a cut and resplice process on the central position of all-solid photonic bandgap fiber, the interference spectra are well tailored and flat-top spectral profiles could be realized by the controllable offset amount of the resplice. The channel position also could be tuned by applying longitudinal torsion with up to 4 nm tuning range. Such a flat-top fiber comb filter is easy-to-fabricate and with a designable passband width and flat-top profile.

Ultra-sensitive pressure dependence of bandgap of rutile-GeO{sub 2} revealed by many body perturbation theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samanta, Atanu; Singh, Abhishek K.; Jain, Manish

2015-08-14

The reported values of bandgap of rutile GeO{sub 2} calculated by the standard density functional theory within local-density approximation (LDA)/generalized gradient approximation (GGA) show a wide variation (∼2 eV), whose origin remains unresolved. Here, we investigate the reasons for this variation by studying the electronic structure of rutile-GeO{sub 2} using many-body perturbation theory within the GW framework. The bandgap as well as valence bandwidth at Γ-point of rutile phase shows a strong dependence on volume change, which is independent of bandgap underestimation problem of LDA/GGA. This strong dependence originates from a change in hybridization among O-p and Ge-(s and p)more » orbitals. Furthermore, the parabolic nature of first conduction band along X-Γ-M direction changes towards a linear dispersion with volume expansion.« less

Tuning the hybridization bandgap by meta-molecules with in-unit interaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Yongqiang; Li, Yunhui, E-mail: liyunhui@tongji.edu.cn; Wu, Qian

2015-09-07

In this paper, we demonstrate that the hybridization bandgap (HBG) can be tuned conveniently by deep subwavelength meta-molecules with in-unit interaction. Spontaneous-emission-cancellation-like (SEC-like) effect is realized in a meta-molecule by introducing the destructive interference of two detuned meta-atoms. The meta-atoms consisting of subwavelength zero-index-metamaterial-based resonators are side-coupled to a microstrip. Compared to conventional HBG configurations, the presence of in-unit interaction between meta-atoms provides more flexibility in tuning the bandgap properties, keeping the device volume almost unchanged. Both numerical simulations and microwave experiments confirm that the width, depth, and spectrum shape of HBG can be tuned by simply introducing SEC-like interactionmore » into the meta-molecule. Due to these features, our design may be promising to be applied in microwave or optics communications systems with strict limitation of device volume and flexible bandgap properties.« less

GePb Alloy Growth Using Layer Inversion Method

NASA Astrophysics Data System (ADS)

Alahmad, Hakimah; Mosleh, Aboozar; Alher, Murtadha; Banihashemian, Seyedeh Fahimeh; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Du, Wei; Li, Bauhoa; Yu, Shui-Qing; Naseem, Hameed A.

2018-04-01

Germanium-lead films have been investigated as a new direct-bandgap group IV alloy. GePb films were deposited on Si via thermal evaporation of Ge and Pb solid sources using the layer inversion metal-induced crystallization method for comparison with the current laser-induced recrystallization method. Material characterization of the films using x-ray diffraction analysis revealed highly oriented crystallinity and Pb incorporation as high as 13.5% before and 5.2% after annealing. Transmission electron microscopy, scanning electron microscopy, and energy-dispersive x-ray mapping of the samples revealed uniform incorporation of elements and complete layer inversion. Optical characterization of the GePb films by Raman spectroscopy and photoluminescence techniques showed that annealing the samples resulted in higher crystalline quality as well as bandgap reduction. The bandgap reduction from 0.67 eV to 0.547 eV observed for the highest-quality material confirms the achievement of a direct-bandgap material.

Fano resonance in anodic aluminum oxide based photonic crystals.

PubMed

Shang, Guo Liang; Fei, Guang Tao; Zhang, Yao; Yan, Peng; Xu, Shao Hui; Ouyang, Hao Miao; Zhang, Li De

2014-01-08

Anodic aluminum oxide based photonic crystals with periodic porous structure have been prepared using voltage compensation method. The as-prepared sample showed an ultra-narrow photonic bandgap. Asymmetric line-shape profiles of the photonic bandgaps have been observed, which is attributed to Fano resonance between the photonic bandgap state of photonic crystal and continuum scattering state of porous structure. And the exhibited Fano resonance shows more clearly when the sample is saturated ethanol gas than air-filled. Further theoretical analysis by transfer matrix method verified these results. These findings provide a better understanding on the nature of photonic bandgaps of photonic crystals made up of porous materials, in which the porous structures not only exist as layers of effective-refractive-index material providing Bragg scattering, but also provide a continuum light scattering state to interact with Bragg scattering state to show an asymmetric line-shape profile.

GePb Alloy Growth Using Layer Inversion Method

NASA Astrophysics Data System (ADS)

Alahmad, Hakimah; Mosleh, Aboozar; Alher, Murtadha; Banihashemian, Seyedeh Fahimeh; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Du, Wei; Li, Bauhoa; Yu, Shui-Qing; Naseem, Hameed A.

2018-07-01

Germanium-lead films have been investigated as a new direct-bandgap group IV alloy. GePb films were deposited on Si via thermal evaporation of Ge and Pb solid sources using the layer inversion metal-induced crystallization method for comparison with the current laser-induced recrystallization method. Material characterization of the films using x-ray diffraction analysis revealed highly oriented crystallinity and Pb incorporation as high as 13.5% before and 5.2% after annealing. Transmission electron microscopy, scanning electron microscopy, and energy-dispersive x-ray mapping of the samples revealed uniform incorporation of elements and complete layer inversion. Optical characterization of the GePb films by Raman spectroscopy and photoluminescence techniques showed that annealing the samples resulted in higher crystalline quality as well as bandgap reduction. The bandgap reduction from 0.67 eV to 0.547 eV observed for the highest-quality material confirms the achievement of a direct-bandgap material.

Band Tailing and Deep Defect States in CH 3NH 3Pb(I 1–xBr x) 3 Perovskites As Revealed by Sub-Bandgap Photocurrent

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutter-Fella, Carolin M.; Miller, D. Westley; Ngo, Quynh P.

Organometal halide perovskite semiconductors have emerged as promising candidates for optoelectronic applications because of the outstanding charge carrier transport properties, achieved with low-temperature synthesis. In this paper, we present highly sensitive sub-bandgap external quantum efficiency (EQE) measurements of Au/spiro-OMeTAD/CH 3NH 3Pb(I 1–xBr x) 3/TiO 2/FTO/glass photovoltaic devices. The room-temperature spectra show exponential band tails with a sharp onset characterized by low Urbach energies (E u) over the full halide composition space. The Urbach energies are 15–23 meV, lower than those for most semiconductors with similar bandgaps (especially with E g > 1.9 eV). Intentional aging of CH 3NH 3Pb(I 1–xBrmore » x) 3 for up to 2300 h, reveals no change in E u, despite the appearance of the PbI 2 phase due to decomposition, and confirms a high degree of crystal ordering. Moreover, sub-bandgap EQE measurements reveal an extended band of sub-bandgap electronic states that can be fit with one or two point defects for pure CH 3NH 3PbI 3 or mixed CH 3NH 3Pb(I 1–xBr x) 3 compositions, respectively. Finally, the study provides experimental evidence of defect states close to the midgap that could impact photocarrier recombination and energy conversion efficiency in higher bandgap CH 3NH 3Pb(I 1–xBr x) 3 alloys.« less

Band Tailing and Deep Defect States in CH 3NH 3Pb(I 1–xBr x) 3 Perovskites As Revealed by Sub-Bandgap Photocurrent

DOE PAGES

Sutter-Fella, Carolin M.; Miller, D. Westley; Ngo, Quynh P.; ...

2017-02-15

Organometal halide perovskite semiconductors have emerged as promising candidates for optoelectronic applications because of the outstanding charge carrier transport properties, achieved with low-temperature synthesis. In this paper, we present highly sensitive sub-bandgap external quantum efficiency (EQE) measurements of Au/spiro-OMeTAD/CH 3NH 3Pb(I 1–xBr x) 3/TiO 2/FTO/glass photovoltaic devices. The room-temperature spectra show exponential band tails with a sharp onset characterized by low Urbach energies (E u) over the full halide composition space. The Urbach energies are 15–23 meV, lower than those for most semiconductors with similar bandgaps (especially with E g > 1.9 eV). Intentional aging of CH 3NH 3Pb(I 1–xBrmore » x) 3 for up to 2300 h, reveals no change in E u, despite the appearance of the PbI 2 phase due to decomposition, and confirms a high degree of crystal ordering. Moreover, sub-bandgap EQE measurements reveal an extended band of sub-bandgap electronic states that can be fit with one or two point defects for pure CH 3NH 3PbI 3 or mixed CH 3NH 3Pb(I 1–xBr x) 3 compositions, respectively. Finally, the study provides experimental evidence of defect states close to the midgap that could impact photocarrier recombination and energy conversion efficiency in higher bandgap CH 3NH 3Pb(I 1–xBr x) 3 alloys.« less

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

NASA Astrophysics Data System (ADS)

Zolnai, Z.; Toporkov, M.; Volk, J.; Demchenko, D. O.; Okur, S.; Szabó, Z.; Özgür, Ü.; Morkoç, H.; Avrutin, V.; Kótai, E.

2015-02-01

The atomic composition with less than 1-2 atom% uncertainty was measured in ternary BeZnO and quaternary BeMgZnO alloys using a combination of nondestructive Rutherford backscattering spectrometry with 1 MeV He+ analyzing ion beam and non-Rutherford elastic backscattering experiments with 2.53 MeV energy protons. An enhancement factor of 60 in the cross-section of Be for protons has been achieved to monitor Be atomic concentrations. Usually the quantitative analysis of BeZnO and BeMgZnO systems is challenging due to difficulties with appropriate experimental tools for the detection of the light Be element with satisfactory accuracy. As it is shown, our applied ion beam technique, supported with the detailed simulation of ion stopping, backscattering, and detection processes allows of quantitative depth profiling and compositional analysis of wurtzite BeZnO/ZnO/sapphire and BeMgZnO/ZnO/sapphire layer structures with low uncertainty for both Be and Mg. In addition, the excitonic bandgaps of the layers were deduced from optical transmittance measurements. To augment the measured compositions and bandgaps of BeO and MgO co-alloyed ZnO layers, hybrid density functional bandgap calculations were performed with varying the Be and Mg contents. The theoretical vs. experimental bandgaps show linear correlation in the entire bandgap range studied from 3.26 eV to 4.62 eV. The analytical method employed should help facilitate bandgap engineering for potential applications, such as solar blind UV photodetectors and heterostructures for UV emitters and intersubband devices.

Post-Earthquake Multibeam Bathymetry and Backscatter Survey of 6400 sq. km. of the Accretionary Complex / Forearc in the Area of the Main 12 Sept. 07 Earthquake Rupture Zone

NASA Astrophysics Data System (ADS)

Orange, D. L.; Teas, P. A.; Decker, J.; Baillie, P.; Djajadihardja, Y. S.; Danque, H.; Digby, A.; Rathore, S.; Patton, J.

2007-12-01

When the 12 September M8.4 Southern Sumatra Earthquake hit, TGS-Nopec was carrying out a multibeam survey in the Sunda Straits, between Java and Sumatra. Working in collaboration with UTIG, OSU, BGR, and BPPT, we designed a 48 hour target-of-opportunity survey in the forearc region of the earthquake in an area where two trench perpendicular multibeam and seismic lines had previously been acquired by BGR. The objectives of the survey were to fill in an area of previously unsurveyed seafloor, and to acquire a data set for before and after comparison with the BGR data. Approx. 1100 line km of multibeam data were acquired between 17 and 20 September on a series of trench-perpendicular lines spaced 8km apart (weather limitations constrained the line orientation). Steep slopes and high backscatter seafloor result in some areas of data dropout. Using a fixed swath width and equi-distant beam spacing, bathymetric grids have been created at a range of scales that provide detailed imagery of the seafloor. The toe of slope is at ~6000m, with several normal faults cutting the seafloor on the incoming plate. The toe region of the accretionary complex shows individual folds 10-40km long, with both seaward and landward vergence. Fold wavelength is ~4km, with fold axes showing a trend slightly oblique to structures higher up on the accretionary complex. The folds in the toe region are cut by ENE trending high angle faults. 20km landward of the toe, in water depths of 5000-3000m, there is a 10km wide region of complex geomorphology and steeper slopes (locally 20 degrees and higher) showing a more degraded character with numerous slump headscarps and linear canyons 5-10km long. Although the slope is dissected by numerous slumps we observe no evidence for recent slope failure in the adjacent forearc basins. We interpret this region to be the seafloor projection of a significant thrust ramp in the accretionary complex. Landward of this area we identify 2 continuous ridges over 80km long, but that in detail show an irregular seafloor morphology. At 2500m water depth, 65km from the toe of slope, a significant geomorphic break with 10-20 degree slopes extends the length of the survey area, with water depths shoaling to 800m. We interpret this to be the surface projection of an out-of-sequence thrust. Although we identify some large debris blocks (>1km in length) in the adjacent forearc basin, the blocks appear rounded, with no obvious source or associated smaller scale debris that would suggest relatively recent emplacement. We find no clear evidence for any large recent slope failures associated with the M8.4 Earthquake or its aftershocks.

Apparent bandgap shift in the internal quantum efficiency for solar cells with back reflectors

NASA Astrophysics Data System (ADS)

Steiner, M. A.; Perl, E. E.; Geisz, J. F.; Friedman, D. J.; Jain, N.; Levi, D.; Horner, G.

2017-04-01

We demonstrate that in solar cells with highly reflective back mirrors, the measured internal quantum efficiency exhibits a shift in bandgap relative to the measured external quantum efficiency. The shift arises from the fact that the measured reflectance at the front surface includes a superposition of waves reflecting from the front and back surfaces. We quantify the magnitude of the apparent shift and discuss the errors that can result in determination of quantities such as the photocurrent. Because of this apparent shift, it is important the bandgap be determined from the external quantum efficiency.

Apparent bandgap shift in the internal quantum efficiency for solar cells with back reflectors

DOE PAGES

Steiner, Myles A.; Perl, E. E.; Geisz, J. F.; ...

2017-04-28

Here, we demonstrate that in solar cells with highly reflective back mirrors, the measured internal quantum efficiency exhibits a shift in bandgap relative to the measured external quantum efficiency. The shift arises from the fact that the measured reflectance at the front surface includes a superposition of waves reflecting from the front and back surfaces. We quantify the magnitude of the apparent shift and discuss the errors that can result in determination of quantities such as the photocurrent. Because of this apparent shift, it is important that the bandgap be determined from the external quantum efficiency.

Visible light photoreactivity from hybridization states between carbon nitride bandgap states and valence states in Nb and Ti oxides

NASA Astrophysics Data System (ADS)

Lee, Hosik; Ohno, Takahisa

2013-03-01

For better efficiency as photocatalysts, N-doping for visible light reactivity has been intensively studied in Lamellar niobic and titanic solid acids (HNb3O8, H2Ti4O9), and its microscopic structures have been debated in this decade. We calculate the layered solid acids' structures and bandgaps. Bandgap reduction by carbon nitride adsorption in interlayer space is observed computationally. It originates from localized nitrogen states which form delocalized top-valence states by hybridizing with the host oxygen states and can contribute to photo-current.

Characteristics of a liquid-crystal-filled composite lattice terahertz bandgap fiber

NASA Astrophysics Data System (ADS)

Bai, Jinjun; Ge, Meilan; Wang, Shasha; Yang, Yanan; Li, Yong; Chang, Shengjiang

2018-07-01

A new type of terahertz fiber is presented based on composite lattice photonic crystal bandgap. The cladding is filled selectively with the nematic liquid crystal 5CB which is sensitive to the electric field. The terahertz wave can be modulated by using the electric field to control the orientation of liquid crystal molecules. The plane wave expansion method and the finite element method are employed to theoretically analyze bandgap characteristics, polarization characteristics, energy fraction and material absorption loss. The results show that this fiber structure can be used as tunable terahertz polarization controller.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana

Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties, is examined.

Optical phonon effect in quasi-one-dimensional semiconductor quantum wires: Band-gap renormalization

NASA Astrophysics Data System (ADS)

Dan, Nguyen Trung; Bechstedt, F.

1996-02-01

We present theoretical studies of dynamical screening in quasi-one-dimensional semiconductor quantum wires including electron-electron and electron-LO-phonon interactions. Within the random-phase approximation we obtain analytical expressions for screened interaction potentials. These expressions can be used to calculate the band-gap renormalization of quantum wires, which depends on the free-carrier density and temperature. We find that the optical phonon interaction effect plays a significant role in band-gap renormalization of quantum wires. The numerical results are compared with some recent experiment measurements as well as available theories.

Photonic bandgap narrowing in conical hollow core Bragg fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozturk, Fahri Emre; Yildirim, Adem; Kanik, Mehmet

2014-08-18

We report the photonic bandgap engineering of Bragg fibers by controlling the thickness profile of the fiber during the thermal drawing. Conical hollow core Bragg fibers were produced by thermal drawing under a rapidly alternating load, which was applied by introducing steep changes to the fiber drawing speed. In conventional cylindrical Bragg fibers, light is guided by omnidirectional reflections from interior dielectric mirrors with a single quarter wave stack period. In conical fibers, the diameter reduction introduced a gradient of the quarter wave stack period along the length of the fiber. Therefore, the light guided within the fiber encountered slightlymore » smaller dielectric layer thicknesses at each reflection, resulting in a progressive blueshift of the reflectance spectrum. As the reflectance spectrum shifts, longer wavelengths of the initial bandgap cease to be omnidirectionally reflected and exit through the cladding, which narrows the photonic bandgap. A narrow transmission bandwidth is particularly desirable in hollow waveguide mid-infrared sensing schemes, where broadband light is coupled to the fiber and the analyte vapor is introduced into the hollow core to measure infrared absorption. We carried out sensing simulations using the absorption spectrum of isopropyl alcohol vapor to demonstrate the importance of narrow bandgap fibers in chemical sensing applications.« less

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

PubMed Central

Wu, Kuen-Hsien; Li, Chong-Wei

2015-01-01

Porous-silicon (PS) multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si) substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS) structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells. PMID:28793542

Theory study on the bandgap of antimonide-based multi-element alloys

NASA Astrophysics Data System (ADS)

An, Ning; Liu, Cheng-Zhi; Fan, Cun-Bo; Dong, Xue; Song, Qing-Li

2017-05-01

In order to meet the design requirements of the high-performance antimonide-based optoelectronic devices, the spin-orbit splitting correction method for bandgaps of Sb-based multi-element alloys is proposed. Based on the analysis of band structure, a correction factor is introduced in the InxGa1-xAsySb1-y bandgaps calculation with taking into account the spin-orbit coupling sufficiently. In addition, the InxGa1-xAsySb1-y films with different compositions are grown on GaSb substrates by molecular beam epitaxy (MBE), and the corresponding bandgaps are obtained by photoluminescence (PL) to test the accuracy and reliability of this new method. The results show that the calculated values agree fairly well with the experimental results. To further verify this new method, the bandgaps of a series of experimental samples reported before are calculated. The error rate analysis reveals that the α of spin-orbit splitting correction method is decreased to 2%, almost one order of magnitude smaller than the common method. It means this new method can calculate the antimonide multi-element more accurately and has the merit of wide applicability. This work can give a reasonable interpretation for the reported results and beneficial to tailor the antimonides properties and optoelectronic devices.

Maximizing and stabilizing luminescence from halide perovskites with potassium passivation

NASA Astrophysics Data System (ADS)

Abdi-Jalebi, Mojtaba; Andaji-Garmaroudi, Zahra; Cacovich, Stefania; Stavrakas, Camille; Philippe, Bertrand; Richter, Johannes M.; Alsari, Mejd; Booker, Edward P.; Hutter, Eline M.; Pearson, Andrew J.; Lilliu, Samuele; Savenije, Tom J.; Rensmo, Håkan; Divitini, Giorgio; Ducati, Caterina; Friend, Richard H.; Stranks, Samuel D.

2018-03-01

Metal halide perovskites are of great interest for various high-performance optoelectronic applications. The ability to tune the perovskite bandgap continuously by modifying the chemical composition opens up applications for perovskites as coloured emitters, in building-integrated photovoltaics, and as components of tandem photovoltaics to increase the power conversion efficiency. Nevertheless, performance is limited by non-radiative losses, with luminescence yields in state-of-the-art perovskite solar cells still far from 100 per cent under standard solar illumination conditions. Furthermore, in mixed halide perovskite systems designed for continuous bandgap tunability (bandgaps of approximately 1.7 to 1.9 electronvolts), photoinduced ion segregation leads to bandgap instabilities. Here we demonstrate substantial mitigation of both non-radiative losses and photoinduced ion migration in perovskite films and interfaces by decorating the surfaces and grain boundaries with passivating potassium halide layers. We demonstrate external photoluminescence quantum yields of 66 per cent, which translate to internal yields that exceed 95 per cent. The high luminescence yields are achieved while maintaining high mobilities of more than 40 square centimetres per volt per second, providing the elusive combination of both high luminescence and excellent charge transport. When interfaced with electrodes in a solar cell device stack, the external luminescence yield—a quantity that must be maximized to obtain high efficiency—remains as high as 15 per cent, indicating very clean interfaces. We also demonstrate the inhibition of transient photoinduced ion-migration processes across a wide range of mixed halide perovskite bandgaps in materials that exhibit bandgap instabilities when unpassivated. We validate these results in fully operating solar cells. Our work represents an important advance in the construction of tunable metal halide perovskite films and interfaces that can approach the efficiency limits in tandem solar cells, coloured-light-emitting diodes and other optoelectronic applications.

Maximizing and stabilizing luminescence from halide perovskites with potassium passivation.

PubMed

Abdi-Jalebi, Mojtaba; Andaji-Garmaroudi, Zahra; Cacovich, Stefania; Stavrakas, Camille; Philippe, Bertrand; Richter, Johannes M; Alsari, Mejd; Booker, Edward P; Hutter, Eline M; Pearson, Andrew J; Lilliu, Samuele; Savenije, Tom J; Rensmo, Håkan; Divitini, Giorgio; Ducati, Caterina; Friend, Richard H; Stranks, Samuel D

2018-03-21

Metal halide perovskites are of great interest for various high-performance optoelectronic applications. The ability to tune the perovskite bandgap continuously by modifying the chemical composition opens up applications for perovskites as coloured emitters, in building-integrated photovoltaics, and as components of tandem photovoltaics to increase the power conversion efficiency. Nevertheless, performance is limited by non-radiative losses, with luminescence yields in state-of-the-art perovskite solar cells still far from 100 per cent under standard solar illumination conditions. Furthermore, in mixed halide perovskite systems designed for continuous bandgap tunability (bandgaps of approximately 1.7 to 1.9 electronvolts), photoinduced ion segregation leads to bandgap instabilities. Here we demonstrate substantial mitigation of both non-radiative losses and photoinduced ion migration in perovskite films and interfaces by decorating the surfaces and grain boundaries with passivating potassium halide layers. We demonstrate external photoluminescence quantum yields of 66 per cent, which translate to internal yields that exceed 95 per cent. The high luminescence yields are achieved while maintaining high mobilities of more than 40 square centimetres per volt per second, providing the elusive combination of both high luminescence and excellent charge transport. When interfaced with electrodes in a solar cell device stack, the external luminescence yield-a quantity that must be maximized to obtain high efficiency-remains as high as 15 per cent, indicating very clean interfaces. We also demonstrate the inhibition of transient photoinduced ion-migration processes across a wide range of mixed halide perovskite bandgaps in materials that exhibit bandgap instabilities when unpassivated. We validate these results in fully operating solar cells. Our work represents an important advance in the construction of tunable metal halide perovskite films and interfaces that can approach the efficiency limits in tandem solar cells, coloured-light-emitting diodes and other optoelectronic applications.

Fiber optic gas detection system for health monitoring of oil-filled transformer

NASA Astrophysics Data System (ADS)

Ho, H. L.; Ju, J.; Jin, W.

2009-10-01

This paper reports the development of a fiber-optic gas detection system capable of detecting three types of dissolved fault gases in oil-filled power transformers or equipment. The system is based on absorption spectroscopy and the target gases include acetylene (C2H2), methane (CH4) and ethylene (C2H4). Low-cost multi-pass sensor heads using fiber coupled micro-optic cells are employed for which the interaction length is up to 4m. Also, reference gas cells made of photonic bandgap (PBG) fiber are implemented. The minimum detectable gas concentrations for methane, acetylene and ethylene are 5ppm, 2ppm and 50ppm respectively.

Bandgap narrowing and emitter efficiency in heavily doped emitter structures revisited

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van Vliet, C.M.

The developments of heavy doping effects and of bandgap narrowing concepts (BGN) during the last two decades are critically discussed. The differences between the real bandgap reduction [Delta]E[sub g] and the apparent electrical bandgap reduction [Delta]G are once more set forth, showing the precise meaning of the density-of-states and degeneracy contributions to [Delta]G. From these concepts, previously elaborated by Marshak and Van Vilet and by Lundstrom et al., the authors indicated before that for negligible recombination the minority-carrier emitter current (J[sub pe]) is given by a Merten-type result. In this paper they show that in the presence of surface andmore » (or) bulk recombination (Auger and SRH) the result of Selvakumar and Roulston is recovered; however, the electrical field in the emitter and the effective intrinsic density of carriers are not those used by these authors but, on the contrary, these quantities are given by the detailed expressions of their previous work.« less

Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

NASA Astrophysics Data System (ADS)

Shoute, Gem; Afshar, Amir; Muneshwar, Triratna; Cadien, Kenneth; Barlage, Douglas

2016-02-01

Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters.

Enhanced conversion efficiency in wide-bandgap GaNP solar cells

DOE PAGES

Sukrittanon, Supanee; Liu, Ren; Ro, Yun Goo; ...

2015-10-12

In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, E g –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher thanmore » other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.« less

Investigation on bandgap, diffraction, interference, and refraction effects of photonic crystal structure in GaN/InGaN LEDs for light extraction.

PubMed

Patra, Saroj Kanta; Adhikari, Sonachand; Pal, Suchandan

2014-06-20

In this paper, we have made a clear differentiation among bandgap, diffraction, interference, and refraction effects in photonic crystal structures (PhCs). For observing bandgap, diffraction, and refraction effects, PhCs are considered on the top p-GaN surface of light emitting diodes (LEDs), whereas for interference effect, hole type PhCs are considered to be embedded within n-GaN layer of LED. From analysis, it is observed that at a particular lattice periodicity, for which bandgap lies within the wavelength of interest shows a significant light extraction due to inhibition of guided mode. Beyond a certain periodicity, diffraction effect starts dominating and light extraction improves further. The interference effect is observed in embedded photonic crystal LEDs, where depth of etching supports constructive interference of outward light waves. We have also shed light on refraction effects exhibited by the PhCs and whether negative refraction properties of PhCs may be useful in case of LED light extraction.

High-efficiency photovoltaic cells

DOEpatents

Yang, H.T.; Zehr, S.W.

1982-06-21

High efficiency solar converters comprised of a two cell, non-lattice matched, monolithic stacked semiconductor configuration using optimum pairs of cells having bandgaps in the range 1.6 to 1.7 eV and 0.95 to 1.1 eV, and a method of fabrication thereof, are disclosed. The high band gap subcells are fabricated using metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) to produce the required AlGaAs layers of optimized composition, thickness and doping to produce high performance, heteroface homojunction devices. The low bandgap subcells are similarly fabricated from AlGa(As)Sb compositions by LPE, MBE or MOCVD. These subcells are then coupled to form a monolithic structure by an appropriate bonding technique which also forms the required transparent intercell ohmic contact (IOC) between the two subcells. Improved ohmic contacts to the high bandgap semiconductor structure can be formed by vacuum evaporating to suitable metal or semiconductor materials which react during laser annealing to form a low bandgap semiconductor which provides a low contact resistance structure.

Computational screening of high-performance optoelectronic materials using OptB88vdW and TB-mBJ formalisms.

PubMed

Choudhary, Kamal; Zhang, Qin; Reid, Andrew C E; Chowdhury, Sugata; Van Nguyen, Nhan; Trautt, Zachary; Newrock, Marcus W; Congo, Faical Yannick; Tavazza, Francesca

2018-05-08

We perform high-throughput density functional theory (DFT) calculations for optoelectronic properties (electronic bandgap and frequency dependent dielectric function) using the OptB88vdW functional (OPT) and the Tran-Blaha modified Becke Johnson potential (MBJ). This data is distributed publicly through JARVIS-DFT database. We used this data to evaluate the differences between these two formalisms and quantify their accuracy, comparing to experimental data whenever applicable. At present, we have 17,805 OPT and 7,358 MBJ bandgaps and dielectric functions. MBJ is found to predict better bandgaps and dielectric functions than OPT, so it can be used to improve the well-known bandgap problem of DFT in a relatively inexpensive way. The peak positions in dielectric functions obtained with OPT and MBJ are in comparable agreement with experiments. The data is available on our websites http://www.ctcms.nist.gov/~knc6/JVASP.html and https://jarvis.nist.gov.

Electronic excitations in shocked nitromethane

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reed, Evan J.; Joannopoulos, J. D.; Fried, Laurence E.

2000-12-15

The nature of electronic excitations in crystalline solid nitromethane under conditions of shock loading and static compression are examined. Density-functional theory calculations are used to determine the crystal bandgap under hydrostatic stress, uniaxial strain, and shear strain. Bandgap lowering under uniaxial strain due to molecular defects and vacancies is considered. Ab initio molecular-dynamics simulations are done of all possible nearest-neighbor collisions at a shock front, and of crystal shearing along a sterically hindered slip plane. In all cases, the bandgap is not lowered enough to produce a significant population of excited states in the crystal. The nearly free rotation ofmore » the nitromethane methyl group and localized nature of the highest occupied molecular orbital and lowest unoccupied molecular orbital states play a role in this result. Dynamical effects have a more significant effect on the bandgap than static effects, but relative molecule velocities in excess of 6 km/s are required to produce a significant thermal population of excited states.« less

All-Phononic Digital Transistor on the Basis of Gap-Soliton Dynamics in an Anharmonic Oscillator Ladder.

PubMed

Malishava, Merab; Khomeriki, Ramaz

2015-09-04

A conceptual mechanism of amplification of phonons by phonons on the basis of a nonlinear band-gap transmission (supratransmission) phenomenon is presented. As an example, a system of weakly coupled chains of anharmonic oscillators is considered. One (source) chain is driven harmonically by a boundary with a frequency located in the upper band close to the band edge of the ladder system. Amplification happens when a second (gate) chain is driven by a small signal in the counterphase and with the same frequency as the first chain. If the total driving of both chains overcomes the band-gap transmission threshold, the large amplitude band-gap soliton emerges and the amplification scenario is realized. The mechanism is interpreted as the nonlinear superposition of evanescent and propagating nonlinear modes manifesting in a single or double soliton generation working in band-gap or bandpass regimes, respectively. The results could be straightforwardly generalized for all-optical or all-magnonic contexts and have all the promise of logic gate operations.

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductivemore » switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.« less

Lasing in a three-dimensional photonic crystal of the liquid crystal blue phase II.

PubMed

Cao, Wenyi; Muñoz, Antonio; Palffy-Muhoray, Peter; Taheri, Bahman

2002-10-01

Photonic-bandgap materials, with periodicity in one, two or three dimensions, offer control of spontaneous emission and photon localization. Low-threshold lasing has been demonstrated in two-dimensional photonic-bandgap materials, both with distributed feedback and defect modes. Liquid crystals with chiral constituents exhibit mesophases with modulated ground states. Helical cholesterics are one-dimensional, whereas blue phases are three-dimensional self-assembled photonic-bandgap structures. Although mirrorless lasing was predicted and observed in one-dimensional helical cholesteric materials and chiral ferroelectric smectic materials, it is of great interest to probe light confinement in three dimensions. Here, we report the first observations of lasing in three-dimensional photonic crystals, in the cholesteric blue phase II. Our results show that distributed feedback is realized in three dimensions, resulting in almost diffraction-limited lasing with significantly lower thresholds than in one dimension. In addition to mirrorless lasing, these self-assembled soft photonic-bandgap materials may also be useful for waveguiding, switching and sensing applications.

ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue

NASA Astrophysics Data System (ADS)

Pauporté, Thierry; Lupan, Oleg; Viana, Bruno; le Bahers, T.

2013-03-01

Nanowires (NWs)-based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film based devices. We have successfully prepared epitaxial n-ZnO(NW)/p-GaN heterojunctions using low temperature soft electrochemical techniques. The structures have been used in LED devices and exhibited highly interesting performances. Moreover, the bandgap of ZnO has been tuned by Cu or Cd doping at controlled atomic concentration. A result was the controlled shift of the LED emission in the visible spectral wavelength region. Using DFT computing calculations, we have also shown that the bandgap narrowing has two different origins for Zn1-xCdxO (ZnO:Cd) and ZnO:Cu. In the first case, it is due to the crystal lattice expansion, whereas in the second case Cu-3d donor and Cu-3d combined to O-2p acceptor bands appear in the bandgap which broadnesses increase with the dopant concentration. This leads to the bandgap reduction.

Bandgap and pseudohelicity effects over conductance in gapped graphene junctures

NASA Astrophysics Data System (ADS)

Navarro-Giraldo, J. A.; Quimbay, C. J.

2018-07-01

We study the conductance in gapped single-layer graphene junctures as a function of bangap, pseudohelicity and charge carriers density. To do it, we first calculate the transmission coefficients of massive charge carries for p–n and n–p–n junctures of gapped single-layer graphene. Next, we calculate the conductance for these two systems using the Landauer formula. Only for the p–n juncture case and non-zero bandgap values, we find the existence of a contribution to the conductance from pseudohelicity inversion states, which is small compared to the contribution from pseudohelicity conservation states. Also, we find for both type of junctures that there exists a window of charge carriers densities values where the conductance is zero (conductance gap), in such a way that the size of this window depends on the squared of the bandgap. We observe that the existence of a bandgap in the system leads to valley mixing and this fact could be useful for the future design of devices based on single-layer graphene.

Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor.

PubMed

Yu, Xuechao; Yu, Peng; Wu, Di; Singh, Bahadur; Zeng, Qingsheng; Lin, Hsin; Zhou, Wu; Lin, Junhao; Suenaga, Kazu; Liu, Zheng; Wang, Qi Jie

2018-04-18

The interest in mid-infrared technologies surrounds plenty of important optoelectronic applications ranging from optical communications, biomedical imaging to night vision cameras, and so on. Although narrow bandgap semiconductors, such as Mercury Cadmium Telluride and Indium Antimonide, and quantum superlattices based on inter-subband transitions in wide bandgap semiconductors, have been employed for mid-infrared applications, it remains a daunting challenge to search for other materials that possess suitable bandgaps in this wavelength range. Here, we demonstrate experimentally for the first time that two-dimensional (2D) atomically thin PtSe 2 has a variable bandgap in the mid-infrared via layer and defect engineering. Here, we show that bilayer PtSe 2 combined with defects modulation possesses strong light absorption in the mid-infrared region, and we realize a mid-infrared photoconductive detector operating in a broadband mid-infrared range. Our results pave the way for atomically thin 2D noble metal dichalcogenides to be employed in high-performance mid-infrared optoelectronic devices.

Single-polarization hollow-core square photonic bandgap waveguide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eguchi, Masashi, E-mail: megu@ieee.org; Tsuji, Yasuhide, E-mail: y-tsuji@mmm.muroran-it.ac.jp

Materials with a periodic structure have photonic bandgaps (PBGs), in which light can not be guided within certain wavelength ranges; thus light can be confined within a low-index region by the bandgap effect. In this paper, rectangular-shaped hollow waveguides having waveguide-walls (claddings) using the PBG have been discussed. The design principle for HE modes of hollow-core rectangular PBG waveguides with a Bragg cladding consisting of alternating high- and low-index layers, based on a 1D periodic multilayer approximation for the Bragg cladding, is established and then a novel single-polarization hollow-core square PBG waveguide using the bandgap difference between two polarized wavesmore » is proposed. Our results demonstrated that a single-polarization guiding can be achieved by using the square Bragg cladding structure with different layer thickness ratios in the mutually orthogonal directions and the transmission loss of the guided mode in a designed hollow-core square PBG waveguide is numerically estimated to be 0.04 dB/cm.« less

Effect of ripple taper on band-gap overlap in a coaxial Bragg structure operating at terahertz frequency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding Xueyong; Li Hongfan; Lv Zhensu

Based on the mode-coupling method, numerical analysis is presented to demonstrate the influence of ripple taper on band-gap overlap in a coaxial Bragg structure operating at terahertz frequency. Results show that the interval between the band-gaps of the competing mode and the desired working mode is narrowed by use of positive-taper ripples, but is expanded if negative-taper ripples are employed, and the influence of the negative-taper ripples is obviously more advantageous than the positive-taper ripples; the band-gap overlap of modes can be efficiently separated by use of negative-taper ripples. The residual side-lobes of the frequency response in a coaxial Braggmore » structure with ripple taper also can be effectively suppressed by employing the windowing-function technique. These peculiarities provide potential advantage in constructing a coaxial Bragg cavity with high quality factor for single higher-order-mode operation of a high-power free-electron maser in the terahertz frequency range.« less

Plasmon-Enhanced Sub-Bandgap Photocatalysis via Triplet-Triplet Annihilation Upconversion for Volatile Organic Compound Degradation.

PubMed

Kim, Hyoung-Il; Weon, Seunghyun; Kang, Homan; Hagstrom, Anna L; Kwon, Oh Seok; Lee, Yoon-Sik; Choi, Wonyong; Kim, Jae-Hong

2016-10-18

This study demonstrates the first reported photocatalytic decomposition of an indoor air pollutant, acetaldehyde, using low-energy, sub-bandgap photons harnessed through sensitized triplet-triplet annihilation (TTA) upconversion (UC). To utilize low-intensity noncoherent indoor light and maximize photocatalytic activity, we designed a plasmon-enhanced sub-bandgap photocatalyst device consisting of two main components: (1) TTA-UC rubbery polymer films containing broad-band plasmonic particles (Ag-SiO 2 ) to upconvert sub-bandgap photons, and (2) nanodiamond (ND)-loaded WO 3 as a visible-light photocatalyst composite. Effective decomposition of acetaldehyde was achieved using ND/WO 3 (E g = 2.8 eV) coupled with TTA-UC polymer films that emit blue photons (λ Em = 425 nm, 2.92 eV) upconverted from green photons (λ Ex = 532 nm, 2.33 eV), which are wasted in most environmental photocatalysis. The overall photocatalytic efficiency was amplified by the broad-band surface plasmon resonance of AgNP-SiO 2 particles incorporated into the TTA-UC films.

Recent Advances in Wide-Bandgap Photovoltaic Polymers.

PubMed

Cai, Yunhao; Huo, Lijun; Sun, Yanming

2017-06-01

The past decade has witnessed significant advances in the field of organic solar cells (OSCs). Ongoing improvements in the power conversion efficiency of OSCs have been achieved, which were mainly attributed to the design and synthesis of novel conjugated polymers with different architectures and functional moieties. Among various conjugated polymers, the development of wide-bandgap (WBG) polymers has received less attention than that of low-bandgap and medium-bandgap polymers. Here, we briefly summarize recent advances in WBG polymers and their applications in organic photovoltaic (PV) devices, such as tandem, ternary, and non-fullerene solar cells. Addtionally, we also dissuss the application of high open-circuit voltage tandem solar cells in PV-driven electrochemical water dissociation. We mainly focus on the molecular design strategies, the structure-property correlations, and the photovoltaic performance of these WBG polymers. Finally, we extract empirical regularities and provide invigorating perspectives on the future development of WBG photovoltaic materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Competing Gap Opening Mechanisms of Monolayer Graphene and Graphene Nanoribbons on Strong Topological Insulators.

PubMed

Lin, Zhuonan; Qin, Wei; Zeng, Jiang; Chen, Wei; Cui, Ping; Cho, Jun-Hyung; Qiao, Zhenhua; Zhang, Zhenyu

2017-07-12

Graphene is a promising material for designing next-generation electronic and valleytronic devices, which often demand the opening of a bandgap in the otherwise gapless pristine graphene. To date, several conceptually different mechanisms have been extensively exploited to induce bandgaps in graphene, including spin-orbit coupling and inversion symmetry breaking for monolayer graphene, and quantum confinement for graphene nanoribbons (GNRs). Here, we present a multiscale study of the competing gap opening mechanisms in a graphene overlayer and GNRs proximity-coupled to topological insulators (TIs). We obtain sizable graphene bandgaps even without inversion symmetry breaking and identify the Kekulé lattice distortions caused by the TI substrates to be the dominant gap opening mechanism. Furthermore, Kekulé distorted armchair GNRs display intriguing nonmonotonous gap dependence on the nanoribbon width, resulting from the coexistence of quantum confinement, edge passivation, and Kekulé distortions. The present study offers viable new approaches for tunable bandgap engineering in graphene and GNRs.

All-Phononic Digital Transistor on the Basis of Gap-Soliton Dynamics in an Anharmonic Oscillator Ladder

NASA Astrophysics Data System (ADS)

Malishava, Merab; Khomeriki, Ramaz

2015-09-01

A conceptual mechanism of amplification of phonons by phonons on the basis of a nonlinear band-gap transmission (supratransmission) phenomenon is presented. As an example, a system of weakly coupled chains of anharmonic oscillators is considered. One (source) chain is driven harmonically by a boundary with a frequency located in the upper band close to the band edge of the ladder system. Amplification happens when a second (gate) chain is driven by a small signal in the counterphase and with the same frequency as the first chain. If the total driving of both chains overcomes the band-gap transmission threshold, the large amplitude band-gap soliton emerges and the amplification scenario is realized. The mechanism is interpreted as the nonlinear superposition of evanescent and propagating nonlinear modes manifesting in a single or double soliton generation working in band-gap or bandpass regimes, respectively. The results could be straightforwardly generalized for all-optical or all-magnonic contexts and have all the promise of logic gate operations.

Three-Dimensional Self-Assembled Photonic Crystal Waveguide

NASA Astrophysics Data System (ADS)

Baek, Kang-Hyun

Photonic crystals (PCs), two- or three-dimensionally periodic, artificial, and dielectric structures, have a specific forbidden band for electromagnetic waves, referred to as photonic bandgap (PBG). The PBG is analogous to the electronic bandgap in natural crystal structures with periodic atomic arrangement. A well-defined and embedded planar, line, or point defect within the PCs causes a break in its structural periodicity, and introduces a state in the PBG for light localization. It offers various applications in integrated optics and photonics including optical filters, sharp bending light guides and very low threshold lasers. Using nanofabrication processes, PCs of the 2-D slab-type and 3-D layer-by-layer structures have been investigated widely. Alternatively, simple and low-cost self-assembled PCs with full 3-D PBG, inverse opals, have been suggested. A template with face centered cubic closed packed structure, opal, may initially be built by self-assembly of colloidal spheres, and is selectively removed after infiltrating high refractive index materials into the interstitials of spheres. In this dissertation, the optical waveguides utilizing the 3-D self-assembled PCs are discussed. The waveguides were fabricated by microfabrication technology. For high-quality colloidal silica spheres and PCs, reliable synthesis, self-assembly, and characterization techniques were developed. Its theoretical and experimental demonstrations are provided and correlated. They suggest that the self-assembled PCs with PBG are feasible for the applications in integrated optics and photonics.

Volume holographic lens spectrum-splitting photovoltaic system for high energy yield with direct and diffuse solar illumination

NASA Astrophysics Data System (ADS)

Chrysler, Benjamin D.; Wu, Yuechen; Yu, Zhengshan; Kostuk, Raymond K.

2017-08-01

In this paper a prototype spectrum-splitting photovoltaic system based on volume holographic lenses (VHL) is designed, fabricated and tested. In spectrum-splitting systems, incident sunlight is divided in spectral bands for optimal conversion by a set of single-junction PV cells that are laterally separated. The VHL spectrumsplitting system in this paper has a form factor similar to conventional silicon PV modules but with higher efficiencies (>30%). Unlike many other spectrum-splitting systems that have been proposed in the past, the system in this work converts both direct and diffuse sunlight while using inexpensive 1-axis tracking systems. The VHL system uses holographic lenses that focus light at a transition wavelength to the boundary between two PV cells. Longer wavelength light is dispersed to the narrow bandgap cell and shorter wavelength light to the wide bandgap cell. A prototype system is designed with silicon and GaAs PV cells. The holographic lenses are fabricated in Covestro Bayfol HX photopolymer by `stitching' together lens segments through sequential masked exposures. The PV cells and holographic lenses were characterized and the data was used in a raytrace simulation and predicts an improvement in total power output of 15.2% compared to a non-spectrum-splitting reference. A laboratory measurement yielded an improvement in power output of 8.5%.

The effect of the temperature on the bandgaps based on the chiral liquid crystal polymer

NASA Astrophysics Data System (ADS)

Wang, Jianhua; Shi, Shuhui; Wang, Bainian

2015-10-01

Chiral side-chain liquid crystal polymer is synthesized from polysiloxanes and liqud crystal monomer 4-(Undecenoic-1- yloxybenzoyloxy)-4'-benzonitrile and 6-[4-(4- Undecenoic -1-yloxybenzoyloxy)- hydroxyphenyl] cholesteryl hexanedioate. The optical and thermal property of the monomer and polymer are shown by POM and DSC. As the unique optical property of the polymer, the bandgaps are shifted for heating temperature. The reflection bandgaps is shifted from 546nm to 429nm with temperature increase. As a photonic material, the chiral polymer which sensitive responses under the outfield is widely studied for reflection display, smart switchable reflective windows and defect model CLC laser etc.

Frequency dispersion of capacitance-voltage characteristics in wide bandgap semiconductor-electrolyte junctions

NASA Astrophysics Data System (ADS)

Frolov, D. S.; Zubkov, V. I.

2016-12-01

The frequency dispersion of capacitance-voltage characteristics and derived charge carrier concentration with application to the junction between an electrolyte and wide band-gap semiconductors are investigated. To expand the measurement frequency range, the precision LCR-meter Agilent E4980A was connected to the electrochemical cell ECVPro Nanometrics via a specially designed switch unit. The influence of series resistance and degree of dopant ionization on the frequency dispersion of CV-measured characteristics are discussed. It was shown that in wide band-gap semiconductors one can get both total and ionized dopant concentration, depending on the test frequency choice for capacitance measurements.

Selective emission multilayer coatings for a molybdenum thermophotovoltaic radiator

DOEpatents

Cockeram, Brian Vern

2004-01-27

Multilayer coating designs have been developed to provide selective emission for a molybdenum thermophotovoltaic (TPV) radiator surface. These coatings increase the surface emissivity of a molybdenum TPV radiator substrate in the wavelength range that matches the bandgap of the TPV cells to increase the power density of the TPV system. Radiator emission at wavelengths greater than the bandgap energy of the TPV cells is greatly reduced through the use of these coatings, which significantly increases the efficiency of the TPV system. The use of this coating greatly improves the performance of a TPV system, and the coating can be tailored to match the bandgap of any practical TPV system.

Wide Bandgap Technology Enhances Performance of Electric-Drive Vehicles |

Science.gov Websites

, WBG materials/devices enable lighter, more compact, and more efficient power electronics for vehicles, and increased electric vehicle adoption by consumers. Wide bandgap power electronics devices power electronics component size and potentially reduce system or component-level cost, while improving

Superlattice optical device

DOEpatents

Biefeld, R.M.; Fritz, I.J.; Gourley, P.L.; Osbourn, G.C.

A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

Optical properties of epitaxial BiFeO3 thin film grown on SrRuO3-buffered SrTiO3 substrate.

PubMed

Xu, Ji-Ping; Zhang, Rong-Jun; Chen, Zhi-Hui; Wang, Zi-Yi; Zhang, Fan; Yu, Xiang; Jiang, An-Quan; Zheng, Yu-Xiang; Wang, Song-You; Chen, Liang-Yao

2014-01-01

The BiFeO3 (BFO) thin film was deposited by pulsed-laser deposition on SrRuO3 (SRO)-buffered (111) SrTiO3 (STO) substrate. X-ray diffraction pattern reveals a well-grown epitaxial BFO thin film. Atomic force microscopy study indicates that the BFO film is rather dense with a smooth surface. The ellipsometric spectra of the STO substrate, the SRO buffer layer, and the BFO thin film were measured, respectively, in the photon energy range 1.55 to 5.40 eV. Following the dielectric functions of STO and SRO, the ones of BFO described by the Lorentz model are received by fitting the spectra data to a five-medium optical model consisting of a semi-infinite STO substrate/SRO layer/BFO film/surface roughness/air ambient structure. The thickness and the optical constants of the BFO film are obtained. Then a direct bandgap is calculated at 2.68 eV, which is believed to be influenced by near-bandgap transitions. Compared to BFO films on other substrates, the dependence of the bandgap for the BFO thin film on in-plane compressive strain from epitaxial structure is received. Moreover, the bandgap and the transition revealed by the Lorentz model also provide a ground for the assessment of the bandgap for BFO single crystals.

Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

NASA Astrophysics Data System (ADS)

Limpert, Steven; Burke, Adam; Chen, I.-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

2017-10-01

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated ‘hot carriers’ before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier, an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

Design concepts for hot carrier-based detectors and energy converters in the near ultraviolet and infrared

NASA Astrophysics Data System (ADS)

Gong, Tao; Krayer, Lisa; Munday, Jeremy N.

2016-10-01

Semiconductor materials are well suited for power conversion when the incident photon energy is slightly larger than the bandgap energy of the semiconductor. However, for photons with energy significantly greater than the bandgap energy, power conversion efficiencies are low. Further, for photons with energy below the bandgap energy, the absence of absorption results in no power generation. Here, we describe photon detection and power conversion of both high- and low-energy photons using hot carrier effects. For the absorption of high-energy photons, excited electrons and holes have excess kinetic energy that is typically lost through thermalization processes between the carriers and the lattice. However, collection of hot carriers before thermalization allows for reduced power loss. Devices utilizing plasmonic nanostructures or simple three-layer stacks (transparent conductor-insulator-metal) can be used to generate and collect these hot carriers. Alternatively, hot carrier collection from sub-bandgap photons can be possible by forming a Schottky junction with an absorbing metal so that hot carriers generated in the metal can be injected across the semiconductor-metal interface. Such structures enable near-IR detection based on sub-bandgap photon absorption. Further, utilization and optimization of localized surface plasmon resonances can increase optical absorption and hot carrier generation (through plasmon decay). Combining these concepts, hot carrier generation and collection can be exploited over a large range of incident wavelengths spanning the UV, visible, and IR.

Analysis of optical and electronic properties of MoS2 for optoelectronics and FET applications

NASA Astrophysics Data System (ADS)

Ullah, Muhammad S.; Yousuf, Abdul Hamid Bin; Es-Sakhi, Azzedin D.; Chowdhury, Masud H.

2018-04-01

Molybdenum disulfide (MoS2) is considered as a promising alternative to conventional semiconductor materials that used in the IC industry because of its novel properties. In this paper, we explore the optical and electronic properties of MoS2 for photodetector and transistors applications. This simulation is done using `DFT materials properties simulator'. Our findings show that mono- and multi-layer MoS2 is suitable for conventional and tunnel FET applications due to direct and indirect band-gap respectively. The bulk MoS2 crystal, which are composed of stacked layers have indirect bandgap and mono-layer MoS2 crystal form direct bandgap at the K-point of Brillouin zone. Indirect bandgap of bulk MoS2 crystal implies that phonons need to be involved in band-to-band tunneling (BTBT) process. Degenerately doped semiconductor, which is basically spinning the Fermi level, changing the DOS profile, and thinning the indirect bandgap that allow tunneling from valence band to conduction band. The optical properties of MoS2 is explored in terms of Absorption coefficient, extinction coefficient and refractive index. Our results shows that a MoS2 based photodetector can be fabricate to detect light in the visible range (below 500nm). It is also observed that the MoS2 is most sensitive for the light of wavelength 450nm.

Quasiparticle band gap in the topological insulator Bi2Te3

NASA Astrophysics Data System (ADS)

Nechaev, I. A.; Chulkov, E. V.

2013-10-01

We present a theoretical study of dispersion of states that form the bulk band-gap edges in the three-dimensional topological insulator Bi2Te3. Within density functional theory, we analyze the effect of atomic positions varied within the error range of the available experimental data and approximation chosen for the exchange-correlation functional on the bulk band gap and k-space location of valence- and conduction-band extrema. For each set of the positions with different exchange-correlation functionals, we show how many-body corrections calculated within a one-shot GW approach affect the mentioned characteristics of electronic structure of Bi2Te3. We thus also illustrate to what degree the one-shot GW results are sensitive to the reference one-particle band structure in the case of bismuth telluride. We found that for this topological insulator the GW corrections enlarge the fundamental band gap and for certain atomic positions and reference band structure bring its value in close agreement with experiment.

Nanometer-scale surface potential and resistance mapping of wide-bandgap Cu(In,Ga)Se2 thin films

NASA Astrophysics Data System (ADS)

Jiang, C.-S.; Contreras, M. A.; Mansfield, L. M.; Moutinho, H. R.; Egaas, B.; Ramanathan, K.; Al-Jassim, M. M.

2015-01-01

We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se2 photovoltaic thin films using the nano-electrical probes of scanning Kelvin probe force microscopy and scanning spreading resistance microscopy. With increasing bandgap, the potential imaging shows significant increases in both the large potential features due to extended defects or defect aggregations and the potential fluctuation due to unresolvable point defects with single or a few charges. The resistance imaging shows increases in both overall resistance and resistance nonuniformity due to defects in the subsurface region. These defects are expected to affect open-circuit voltage after the surfaces are turned to junction upon device completion.

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2012-01-20

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the widemore » bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.« less

Nanodopant-Induced Band Modulation in AgPbmSbTe2+m-Type Nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yi; Ke, Xuezhi; Chen, Changfeng

2011-01-01

We elucidate the fundamental physics of nanoscale dopants in narrow band-gap thermoelectric nanocomposites XPbmYTe2+m (X=Ag,Na; Y=Sb,Bi) using first-principles calculations. Our re- sults unveil distinct band-structure modulations, most notably a sizable band-gap widening driven by nanodopant-induced lattice strain and a band split-off at the conduction band minimum caused by the spin-orbit interaction of the dopant Sb or Bi atoms. Boltzmann transport calculations demon- strate that these band modulations have significant but competing effects on high-temperature elec- tron transport behavior. These results offer insights for understanding recent experimental findings and suggest principles for optimizing thermoelectric properties of narrow band-gap semiconductors.

Broad spectrum solar cell

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA; Wu, Junqiao [Richmond, CA; Schaff, William J [Ithaca, NY

2007-05-15

An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

Modulating the band structure and sub-bandgap absorption of Co-hyperdoped silicon by co-doping with shallow-level elements

NASA Astrophysics Data System (ADS)

Dong, Xiao; Fang, Xiuxiu; Wang, Yongyong; Song, Xiaohui; Lu, Zhansheng

2018-06-01

Hyperdoped group-III elements can lower the Fermi energy in the band structures of Co-hyperdoped silicon. When the Co-to-X (X = B, Al, Ga) ratio is 2:1, the intermediate band (IB) in the bandgap includes the Fermi energy and is partially filled by electrons, which is in accordance with the requirement of an IB material. The hyperdoped X atoms can cause the blueshift of the sub-bandgap absorption of the compound compared with the material with no shallow-level elements, which is due to the enlargement of the electronic excitation energy of the Co,X-co-doped silicon.

Band structures of TiO2 doped with N, C and B*

PubMed Central

Xu, Tian-Hua; Song, Chen-Lu; Liu, Yong; Han, Gao-Rong

2006-01-01

This study on the band structures and charge densities of nitrogen (N)-, carbon (C)- and boron (B)-doped titanium dioxide (TiO2) by first-principles simulation with the CASTEP code (Segall et al., 2002) showed that the three 2p bands of impurity atom are located above the valence-band maximum and below the Ti 3d bands, and that along with the decreasing of impurity atomic number, the fluctuations become more intensive. We cannot observe obvious band-gap narrowing in our result. Therefore, the cause of absorption in visible light might be the isolated impurity atom 2p states in band-gap rather than the band-gap narrowing. PMID:16532532

Exploiting elastic anharmonicity in aluminum nitride matrix for phase-synchronous frequency reference generation

NASA Astrophysics Data System (ADS)

Ghatge, Mayur; Tabrizian, Roozbeh

2018-03-01

A matrix of aluminum-nitride (AlN) waveguides is acoustically engineered to realize electrically isolated phase-synchronous frequency references through nonlinear wave-mixing. AlN rectangular waveguides are cross-coupled through a periodically perforated plate that is engineered to have a wide acoustic bandgap around a desirable frequency ( f1≈509 MHz). While the coupling plate isolates the matrix from resonant vibrations of individual waveguide constituents at f1, it is transparent to the third-order harmonic waves (3f1) that are generated through nonlinear wave-mixing. Therefore, large-signal excitation of the f1 mode in a constituent waveguide generates acoustic waves at 3f1 with an efficiency defined by elastic anharmonicity of the AlN film. The phase-synchronous propagation of the third harmonic through the matrix is amplified by a high quality-factor resonance mode at f2≈1529 MHz, which is sufficiently close to 3f1 (f2 ≅ 3f1). Such an architecture enables realization of frequency-multiplied and phase-synchronous, yet electrically and spectrally isolated, references for multi-band/carrier and spread-spectrum wireless communication systems.

Protection Against Lipopolysaccharide-Induced Immunosuppression by IgG and IgM.

PubMed

Kyvelidou, Christiana; Sotiriou, Dimitris; Zerva, Ioanna; Athanassakis, Irene

2018-04-01

Lipopolysaccharide (LPS) is commonly used in murine sepsis models, which are largely associated with immunosuppression and collapse of the immune system. After adapting the LPS treatment to the needs of locally bred BALB/c mice, the present study explored the potential role of IgG and IgM in reversing LPS endotoxemia. The established protocol consisted of five daily intraperitoneal injections of 0.2 μg/g LPS, which was tolerable by half of the manipulated animals. Such a protocol allowed longer survival, necessary in the prospect of therapeutic treatment application. This treatment significantly decreased CD4+, CD8+, CD3z+, and CD19+ cells, while increasing myeloid-derived suppressor cells (MDSCs; CD11b+Gr1+), CD25+ and Foxp3+ cells. These results were accompanied by increased arginase-1 activity in spleen cell lysates and production of IL-6, TNF-α, IL-18, and C-reactive protein (CRP) in the serum. The applied LPS protocol did not alter serum procalcitonin levels. MDSCs isolated from the spleen of LPS-treated animals (LPS-MDSCs) decreased proliferation of naive T cells in coculture experiments. The application of IgG and IgM to the naive T cell/LPS-MDSCs cocultures significantly decreased CD25+, Foxp3+, and CD3z+ cells, indicating an anti-suppressive effect of immunoglobulins. The in vivo application of IgG and IgM significantly decreased the percent of CD11b+Gr1+, CD25+, Foxp3+ cells, and arginase-1 activity in the spleen of LPS-treated animals, while decreasing IL-6, TNF-α, and CRP levels in the serum, allowing survival to all animals tested. In conclusion, these results reveal a novel mode of action of IgG/IgM in LPS endotoxemia, strengthening thus the use of immunoglobulin treatment is septic patients.

From Regional Hazard Assessment to Nuclear-Test-Ban Treaty Support - InSAR Ground Motion Services

NASA Astrophysics Data System (ADS)

Lege, T.; Kalia, A.; Gruenberg, I.; Frei, M.

2016-12-01

There are numerous scientific applications of InSAR methods in tectonics, earthquake analysis and other geologic and geophysical fields. Ground motion on local and regional scale measured and monitored via the application of the InSAR techniques provide scientists and engineers with plenty of new insights and further understanding of subsurface processes. However, the operational use of InSAR is not yet very widespread. To foster the operational utilization of the Copernicus Sentinel Satellites in the day-to-day business of federal, state and municipal work and planning BGR (Federal Institute for Geosciences and Natural Resources) initiated workshops with potential user groups. Through extensive reconcilement of interests and demands with scientific, technical, economic and governmental stakeholders (e.g. Ministries, Mining Authorities, Geological Surveys, Geodetic Surveys and Environmental Agencies on federal and state level, SMEs, German Aerospace Center) BGR developed the concept of the InSAR based German National Ground Motion Service. One important backbone for the nationwide ground motion service is the so-called Persistent Scatterer Interferometry Wide Area Product (WAP) approach developed with grants of European research funds. The presentation shows the implementation of the ground motion service and examples for product developments for operational supervision of mining, water resources management and spatial planning. Furthermore the contributions of Copernicus Sentinel 1 radar data in the context of CTBT are discussed. The DInSAR processing of Sentinel 1 IW (Interferometric Wide Swath) SAR acquisitions from January 1st and 13th Jan. 2016 allow for the first time a near real time ground motion measurement of the North Korean nuclear test site. The measured ground displacements show a strong spatio-temporal correlation to the calculated epicenter measured by teleseismic stations. We are convinced this way another space technique will soon contribute even further to secure better societal information needs.

Method of depositing wide bandgap amorphous semiconductor materials

DOEpatents

Ellis, Jr., Frank B.; Delahoy, Alan E.

1987-09-29

A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

Tandem junction amorphous silicon solar cells

DOEpatents

Hanak, Joseph J.

1981-01-01

An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

Automating Energy Bandgap Measurements in Semiconductors Using LabVIEW

ERIC Educational Resources Information Center

Garg, Amit; Sharma, Reena; Dhingra, Vishal

2010-01-01

In this paper, we report the development of an automated system for energy bandgap and resistivity measurement of a semiconductor sample using Four-Probe method for use in the undergraduate laboratory of Physics and Electronics students. The automated data acquisition and analysis system has been developed using National Instruments USB-6008 DAQ…

Nonlinear optics in hollow-core photonic bandgap fibers.

PubMed

Bhagwat, Amar R; Gaeta, Alexander L

2008-03-31

Hollow-core photonic-bandgap fibers provide a new geometry for the realization and enhancement of many nonlinear optical effects. Such fibers offer novel guidance and dispersion properties that provide an advantage over conventional fibers for various applications. In this review we summarize the nonlinear optics experiments that have been performed using these hollow-core fibers.

Scanning tunneling microscopy of atomically precise graphene nanoribbons exfoliated onto H:Si(100)

NASA Astrophysics Data System (ADS)

Radocea, Adrian; Mehdi Pour, Mohammad; Vo, Timothy; Shekhirev, Mikhail; Sinitskii, Alexander; Lyding, Joseph

Atomically precise graphene nanoribbons (GNRs) are promising materials for next generation transistors due to their well-controlled bandgaps and the high thermal conductivity of graphene. The solution synthesis of graphene nanoribbons offers a pathway towards scalable manufacturing. While scanning tunneling microscopy (STM) can access size scales required for characterization, solvent residue increases experimental difficulty and precludes band-gap determination via scanning tunneling spectroscopy (STS). Our work addresses this challenge through a dry contact transfer method that cleanly transfers solution-synthesized GNRs onto H:Si(100) under UHV using a fiberglass applicator. The semiconducting silicon surface avoids problems with image charge screening enabling intrinsic bandgap measurements. We characterize the nanoribbons using STM and STS. For chevron GNRs, we find a 1.6 eV bandgap, in agreement with computational modeling, and map the electronic structure spatially with detailed spectra lines and current imaging tunneling spectroscopy. Mapping the electronic structure of graphene nanoribbons is an important step towards taking advantage of the ability to form atomically precise nanoribbons and finely tune their properties.

Multijunction solar cell design revisited: disruption of current matching by atmospheric absorption bands: Disruption of current matching by atmospheric absorption bands

DOE PAGES

McMahon, William E.; Friedman, Daniel J.; Geisz, John F.

2017-05-23

This paper re-examines the impact of atmospheric absorption bands on series-connected multijunction cell design, motivated by the numerous local efficiency maxima that appear as the number of junctions is increased. Some of the local maxima are related to the bottom subcell bandgap and are already well understood: As the bottom subcell bandgap is varied, a local efficiency maximum is produced wherever the bottom cell bandgap crosses an atmospheric absorption band. The optimal cell designs at these local maxima are generally current matched, such that all subcells have nearly the same short-circuit current. We systematically describe additional local maxima that occurmore » wherever an upper subcell bandgap encounters an atmospheric absorption band. Moreover, these local maxima are not current matched and become more prevalent as the number of junctions increases, complicating the solution space for five-junction and six-junction designs. A systematic framework for describing this complexity is developed, and implications for numerical convergence are discussed.« less

Optical characterization and bandgap engineering of flat and wrinkle-textured FA0.83Cs0.17Pb(I1-xBrx)3 perovskite thin films

NASA Astrophysics Data System (ADS)

Tejada, A.; Braunger, S.; Korte, L.; Albrecht, S.; Rech, B.; Guerra, J. A.

2018-05-01

The complex refractive indices of formamidinium cesium lead mixed-halide [FA0.83Cs0.17Pb(I1- xBrx)3] perovskite thin films of compositions ranging from x = 0 to 0.4, with both flat and wrinkle-textured surface topographies, are reported. The films are characterized using a combination of variable angle spectroscopic ellipsometry and spectral transmittance in the wavelength range of 190 nm to 850 nm. Optical constants, film thicknesses and roughness layers are obtained point-by-point by minimizing a global error function, without using optical dispersion models, and including topographical information supplied by a laser confocal microscope. To evaluate the bandgap engineering potential of the material, the optical bandgaps and Urbach energies are then accurately determined by applying a band fluctuation model for direct semiconductors, which considers both the Urbach tail and the fundamental band-to-band absorption region in a single equation. With this information, the composition yielding the optimum bandgap of 1.75 eV for a Si-perovskite tandem solar cell is determined.

Control of optical bandgap energy and optical absorption coefficient by geometric parameters in sub-10 nm silicon-nanodisc array structure

NASA Astrophysics Data System (ADS)

Fairuz Budiman, Mohd; Hu, Weiguo; Igarashi, Makoto; Tsukamoto, Rikako; Isoda, Taiga; Itoh, Kohei M.; Yamashita, Ichiro; Murayama, Akihiro; Okada, Yoshitaka; Samukawa, Seiji

2012-02-01

A sub-10 nm, high-density, periodic silicon-nanodisc (Si-ND) array has been fabricated using a new top-down process, which involves a 2D array bio-template etching mask made of Listeria-Dps with a 4.5 nm diameter iron oxide core and damage-free neutral-beam etching (Si-ND diameter: 6.4 nm). An Si-ND array with an SiO2 matrix demonstrated more controllable optical bandgap energy due to the fine tunability of the Si-ND thickness and diameter. Unlike the case of shrinking Si-ND thickness, the case of shrinking Si-ND diameter simultaneously increased the optical absorption coefficient and the optical bandgap energy. The optical absorption coefficient became higher due to the decrease in the center-to-center distance of NDs to enhance wavefunction coupling. This means that our 6 nm diameter Si-ND structure can satisfy the strict requirements of optical bandgap energy control and high absorption coefficient for achieving realistic Si quantum dot solar cells.

Relation between bandgap and resistance drift in amorphous phase change materials

PubMed Central

Rütten, Martin; Kaes, Matthias; Albert, Andreas; Wuttig, Matthias; Salinga, Martin

2015-01-01

Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on amorphous thin films of the three phase change materials Ag4In3Sb67Te26, GeTe and the most popular Ge2Sb2Te5. A widening of the bandgap upon annealing accompanied by a decrease of the optical dielectric constant ε∞ is observed for all three materials. Quantitative comparison with experimental data for the apparent activation energy of conduction reveals that the temporal evolution of bandgap and activation energy can be decoupled. The case of Ag4In3Sb67Te26, where the increase of activation energy is significantly smaller than the bandgap widening, demonstrates the possibility to identify new phase change materials with reduced resistance drift. PMID:26621533

Effect of elastic strain redistribution on electronic band structures of compressively strained GaInAsP/InP membrane quantum wires

NASA Astrophysics Data System (ADS)

Ferdous, F.; Haque, A.

2007-05-01

The effect of redistribution of elastic strain relaxation on the energy band structures of GaInAsP/InP compressively strained membrane quantum wires fabricated by electron-beam lithography, reactive-ion etching and two-step epitaxial growth is theoretically studied using an 8-band k ṡp method. Anisotropic strain analysis by the finite element method shows that due to etching away the top and the bottom InP clad layers in membrane structures, redistribution of strain occurs. It is found that strain redistribution increases the effective bandgap of membrane quantum wire structures causing a blueshift of the emission frequency. Comparison with effective bandgap calculations neglecting confinement and band mixing demonstrates that neglect of these effects leads to an overestimation of the change in the bandgap. We have also investigated the effect of variation of wire width, barrier strain compensation, number of stacked quantum wire layers, and thickness of the top and the bottom residual InP layers in membrane structures on the change in the effective bandgap of membrane structures.

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-09-19

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Defect-induced band-edge reconstruction of a bismuth-halide double perovskite for visible-light absorption

DOE PAGES

Slavney, Adam H.; Leppert, Linn; Bartesaghi, Davide; ...

2017-03-29

In this study, halide double perovskites have recently been developed as less toxic analogs of the lead perovskite solar-cell absorbers APbX 3 (A = monovalent cation; X = Br or I). However, all known halide double perovskites have large bandgaps that afford weak visible-light absorption. The first halide double perovskite evaluated as an absorber, Cs 2AgBiBr 6 (1), has a bandgap of 1.95 eV. Here, we show that dilute alloying decreases 1’s bandgap by ca. 0.5 eV. Importantly, time-resolved photoconductivity measurements reveal long-lived carriers with microsecond lifetimes in the alloyed material, which is very promising for photovoltaic applications. The alloyedmore » perovskite described herein is the first double perovskite to show comparable bandgap energy and carrier lifetime to those of (CH 3NH 3)PbI 3. By describing how energy- and symmetry-matched impurity orbitals, at low concentrations, dramatically alter 1’s band edges, we open a potential pathway for the large and diverse family of halide double perovskites to compete with APbX 3 absorbers.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slavney, Adam H.; Leppert, Linn; Bartesaghi, Davide

In this study, halide double perovskites have recently been developed as less toxic analogs of the lead perovskite solar-cell absorbers APbX 3 (A = monovalent cation; X = Br or I). However, all known halide double perovskites have large bandgaps that afford weak visible-light absorption. The first halide double perovskite evaluated as an absorber, Cs 2AgBiBr 6 (1), has a bandgap of 1.95 eV. Here, we show that dilute alloying decreases 1’s bandgap by ca. 0.5 eV. Importantly, time-resolved photoconductivity measurements reveal long-lived carriers with microsecond lifetimes in the alloyed material, which is very promising for photovoltaic applications. The alloyedmore » perovskite described herein is the first double perovskite to show comparable bandgap energy and carrier lifetime to those of (CH 3NH 3)PbI 3. By describing how energy- and symmetry-matched impurity orbitals, at low concentrations, dramatically alter 1’s band edges, we open a potential pathway for the large and diverse family of halide double perovskites to compete with APbX 3 absorbers.« less

GaAsSb bandgap, surface fermi level, and surface state density studied by photoreflectance modulation spectroscopy

NASA Astrophysics Data System (ADS)

Hwang, J. S.; Tsai, J. T.; Su, I. C.; Lin, H. C.; Lu, Y. T.; Chiu, P. C.; Chyi, J. I.

2012-05-01

The bandgap, surface Fermi level, and surface state density of a series of GaAs1-xSbx surface intrinsic-n+ structures with GaAs as substrate are determined for various Sb mole fractions x by the photoreflectance modulation spectroscopy. The dependence of the bandgap on the mole composition x is in good agreement with previous measurements as well as predictions calculated using the dielectric model of Van Vechten and Bergstresser in Phys. Rev. B 1, 3551 (1970). For a particular composition x, the surface Fermi level is always strongly pinned within the bandgap of GaAs1-xSbx and we find its variation with composition x is well described by a function EF = 0.70 - 0.192 x for 0 ≦ x ≦ 0.35, a result which is notably different from that reported by Chouaib et al. [Appl. Phys. Lett. 93, 041913 (2008)]. Our results suggest that the surface Fermi level is pinned at the midgap of GaAs and near the valence band of the GaSb.

Relation between bandgap and resistance drift in amorphous phase change materials.

PubMed

Rütten, Martin; Kaes, Matthias; Albert, Andreas; Wuttig, Matthias; Salinga, Martin

2015-12-01

Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on amorphous thin films of the three phase change materials Ag4In3Sb67Te26, GeTe and the most popular Ge2Sb2Te5. A widening of the bandgap upon annealing accompanied by a decrease of the optical dielectric constant ε∞ is observed for all three materials. Quantitative comparison with experimental data for the apparent activation energy of conduction reveals that the temporal evolution of bandgap and activation energy can be decoupled. The case of Ag4In3Sb67Te26, where the increase of activation energy is significantly smaller than the bandgap widening, demonstrates the possibility to identify new phase change materials with reduced resistance drift.

Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

PubMed Central

Shoute, Gem; Afshar, Amir; Muneshwar, Triratna; Cadien, Kenneth; Barlage, Douglas

2016-01-01

Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters. PMID:26842997

In- and Ga-based inorganic double perovskites with direct bandgaps for photovoltaic applications.

PubMed

Dai, Jun; Ma, Liang; Ju, Minggang; Huang, Jinsong; Zeng, Xiao Cheng

2017-08-16

Double perovskites in the form of A 2 B'B''X 6 (A = Cs, B' = Ag, B'' = Bi) have been reported as potential alternatives to lead-containing organometal trihalide perovskites. However, all double perovskites synthesized to date exhibit indirect bandgaps >1.95 eV, which are undesirable for photovoltaic and optoelectronic applications. Herein, we report a comprehensive computer-aided screening of In- and Ga-based double perovskites for potential photovoltaic applications. To this end, several preconditions are implemented for the screening of optimal candidates, which include structural stability, electronic bandgaps, and optical absorption. Importantly, four In- and Ga-based double perovskites are identified to possess direct bandgaps within the desirable range of 0.9-1.6 eV for photovoltaic applications. Dominant optical absorption of the four double perovskites is found to be in the UV range. The structural and thermal stability of the four double perovskites are examined using both the empirical Goldschmidt ratio and convex-hull calculations. Only Cs 2 AgInBr 6 is predicted to be thermodynamically stable.

Multijunction solar cell design revisited: disruption of current matching by atmospheric absorption bands: Disruption of current matching by atmospheric absorption bands

DOE Office of Scientific and Technical Information (OSTI.GOV)

McMahon, William E.; Friedman, Daniel J.; Geisz, John F.

This paper re-examines the impact of atmospheric absorption bands on series-connected multijunction cell design, motivated by the numerous local efficiency maxima that appear as the number of junctions is increased. Some of the local maxima are related to the bottom subcell bandgap and are already well understood: As the bottom subcell bandgap is varied, a local efficiency maximum is produced wherever the bottom cell bandgap crosses an atmospheric absorption band. The optimal cell designs at these local maxima are generally current matched, such that all subcells have nearly the same short-circuit current. We systematically describe additional local maxima that occurmore » wherever an upper subcell bandgap encounters an atmospheric absorption band. Moreover, these local maxima are not current matched and become more prevalent as the number of junctions increases, complicating the solution space for five-junction and six-junction designs. A systematic framework for describing this complexity is developed, and implications for numerical convergence are discussed.« less

Extremely small bandgaps, engineered by controlled multi-scale ordering in InAsSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarney, W. L.; Svensson, S. P.; Lin, Y.

2016-06-07

The relationship between the effective bandgap and the crystalline structure in ordered InAsSb material has been studied. Modulation of the As/Sb ratio was induced along the growth direction during molecular beam epitaxy, producing a strained layer superlattice. To enable the use of concentration ratios near unity in both layers in the period, the structures were grown with negligible net strain on a virtual substrate with a lattice constant considerably larger than that of GaSb. The bandgap line-up of InAsSb layers with different compositions is such that a type II superlattice is formed, which exhibits smaller bandgaps than either of themore » two constituents. It can also be smaller than the possible minimum direct-bandgap of the alloy. From observations of CuPt ordering in bulk layers with small amounts of strain of both signs, we postulate that strain is the main driving force for atomic ordering in InAsSb. Because the modulated structures exhibit small but opposing amounts of strain, both layers in the period exhibit ordering at the atomic scale throughout the structure. Since the strain can be controlled, the ordering can be controlled and sustained for arbitrary thick layers, unlike the situation in uniform bulk layers where the residual strain eventually leads to dislocation formation. This offers a unique way of using ordering at two different scales to engineer the band-structure.« less

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Webster, P. T.; Riordan, N. A.; Liu, S.

2015-12-28

The structural and optical properties of lattice-matched InAs{sub 0.911}Sb{sub 0.089} bulk layers and strain-balanced InAs/InAs{sub 1−x}Sb{sub x} (x ∼ 0.1–0.4) superlattices grown on (100)-oriented GaSb substrates by molecular beam epitaxy are examined using X-ray diffraction, spectroscopic ellipsometry, and temperature dependent photoluminescence spectroscopy. The photoluminescence and ellipsometry measurements determine the ground state bandgap energy and the X-ray diffraction measurements determine the layer thickness and mole fraction of the structures studied. Detailed modeling of the X-ray diffraction data is employed to quantify unintentional incorporation of approximately 1% Sb into the InAs layers of the superlattices. A Kronig-Penney model of the superlattice miniband structure ismore » used to analyze the valence band offset between InAs and InAsSb, and hence the InAsSb band edge positions at each mole fraction. The resulting composition dependence of the bandgap energy and band edge positions of InAsSb are described using the bandgap bowing model; the respective low and room temperature bowing parameters for bulk InAsSb are 938 and 750 meV for the bandgap, 558 and 383 meV for the conduction band, and −380 and −367 meV for the valence band.« less

Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites

PubMed Central

Dar, M. Ibrahim; Jacopin, Gwénolé; Meloni, Simone; Mattoni, Alessandro; Arora, Neha; Boziki, Ariadni; Zakeeruddin, Shaik Mohammed; Rothlisberger, Ursula; Grätzel, Michael

2016-01-01

Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence behavior of three representatives of this important class of photonic materials, that is, CH3NH3PbI3, CH3NH3PbBr3, and CH(NH2)2PbBr3, which emerged from our thorough studies of the effects of temperature on their bandgap and emission decay dynamics using time-integrated and time-resolved photoluminescence spectroscopy. The low-temperature (<100 K) photoluminescence of CH3NH3PbI3 and CH3NH3PbBr3 reveals two distinct emission peaks, whereas that of CH(NH2)2PbBr3 shows a single emission peak. Furthermore, irrespective of perovskite composition, the bandgap exhibits an unusual blueshift by raising the temperature from 15 to 300 K. Density functional theory and classical molecular dynamics simulations allow for assigning the additional photoluminescence peak to the presence of molecularly disordered orthorhombic domains and also rationalize that the unusual blueshift of the bandgap with increasing temperature is due to the stabilization of the valence band maximum. Our findings provide new insights into the salient emission properties of perovskite materials, which define their performance in solar cells and light-emitting devices. PMID:27819049

Modelling and measurement of bandgap behaviour in medium-wavelength IR InAs/InAs0.815Sb0.185 strained-layer superlattices

NASA Astrophysics Data System (ADS)

Letka, Veronica; Keen, James; Craig, Adam; Marshall, Andrew R. J.

2017-10-01

InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb0.185 SLS structures, grown as undoped absorption epilayers on GaAs, were fabricated using molecular beam epitaxy in order to study the dependence of the ground state transitions on temperature and superlattice period thickness. Photoluminescence peaks at 4 K were obtained with the use of a helium-cooled micro-PL system and an InSb detector, and temperature-dependent absorption spectra were measured in the range 77 K - 300 K on a Fourier Transform Infrared (FTIR) spectrometer, equipped with a 1370 K blackbody source and a DTGS detector. An nBn device sample with the absorber structure identical to one of the undoped samples was also grown and processed with the goal of measuring temperature-dependent spectral response. A model for superlattice band alignment was also devised, incorporating the Bir-Pikus transformation results for uniaxial and biaxial strain, and the Einstein oscillator model for bandgap temperature dependence. Absorption coefficients of several 1000 cm-1 throughout the entire MWIR range are found for all samples, and temperature dependence of the bandgaps is extracted and compared to the model. This and photoluminescence data also demonstrate bandgap shifts consistent with the different superlattice periods of the three samples.

Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites.

PubMed

Dar, M Ibrahim; Jacopin, Gwénolé; Meloni, Simone; Mattoni, Alessandro; Arora, Neha; Boziki, Ariadni; Zakeeruddin, Shaik Mohammed; Rothlisberger, Ursula; Grätzel, Michael

2016-10-01

Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence behavior of three representatives of this important class of photonic materials, that is, CH 3 NH 3 PbI 3 , CH 3 NH 3 PbBr 3 , and CH(NH 2 ) 2 PbBr 3 , which emerged from our thorough studies of the effects of temperature on their bandgap and emission decay dynamics using time-integrated and time-resolved photoluminescence spectroscopy. The low-temperature (<100 K) photoluminescence of CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 reveals two distinct emission peaks, whereas that of CH(NH 2 ) 2 PbBr 3 shows a single emission peak. Furthermore, irrespective of perovskite composition, the bandgap exhibits an unusual blueshift by raising the temperature from 15 to 300 K. Density functional theory and classical molecular dynamics simulations allow for assigning the additional photoluminescence peak to the presence of molecularly disordered orthorhombic domains and also rationalize that the unusual blueshift of the bandgap with increasing temperature is due to the stabilization of the valence band maximum. Our findings provide new insights into the salient emission properties of perovskite materials, which define their performance in solar cells and light-emitting devices.

Photoinduced Bandgap Renormalization and Exciton Binding Energy Reduction in WS2.

PubMed

Cunningham, Paul D; Hanbicki, Aubrey T; McCreary, Kathleen M; Jonker, Berend T

2017-12-26

Strong Coulomb attraction in monolayer transition metal dichalcogenides gives rise to tightly bound excitons and many-body interactions that dominate their optoelectronic properties. However, this Coulomb interaction can be screened through control of the surrounding dielectric environment as well as through applied voltage, which provides a potential means of tuning the bandgap, exciton binding energy, and emission wavelength. Here, we directly show that the bandgap and exciton binding energy can be optically tuned by means of the intensity of the incident light. Using transient absorption spectroscopy, we identify a sub-picosecond decay component in the excited-state dynamics of WS 2 that emerges for incident photon energies above the A-exciton resonance, which originates from a nonequilibrium population of charge carriers that form excitons as they cool. The generation of this charge-carrier population exhibits two distinct energy thresholds. The higher threshold is coincident with the onset of continuum states and therefore provides a direct optical means of determining both the bandgap and exciton binding energy. Using this technique, we observe a reduction in the exciton binding energy from 310 ± 30 to 220 ± 20 meV as the excitation density is increased from 3 × 10 11 to 1.2 × 10 12 photons/cm 2 . This reduction is due to dynamic dipolar screening of Coulomb interactions by excitons, which is the underlying physical process that initiates bandgap renormalization and leads to the insulator-metal transition in monolayer transition metal dichalcogenides.

Active tuning of vibration and wave propagation in elastic beams with periodically placed piezoelectric actuator/sensor pairs

NASA Astrophysics Data System (ADS)

Li, Fengming; Zhang, Chuanzeng; Liu, Chunchuan

2017-04-01

A novel strategy is proposed to actively tune the vibration and wave propagation properties in elastic beams. By periodically placing the piezoelectric actuator/sensor pairs along the beam axis, an active periodic beam structure which exhibits special vibration and wave propagation properties such as the frequency pass-bands and stop-bands (or band-gaps) is developed. Hamilton's principle is applied to establish the equations of motion of the sub-beam elements i.e. the unit-cells, bonded by the piezoelectric patches. A negative proportional feedback control strategy is employed to design the controllers which can provide a positive active stiffness to the beam for a positive feedback control gain, which can increase the stability of the structural system. By means of the added positive active stiffness, the periodicity or the band-gap property of the beam with periodically placed piezoelectric patches can be actively tuned. From the investigation, it is shown that better band-gap characteristics can be achieved by using the negative proportional feedback control. The band-gaps can be obviously broadened by properly increasing the control gain, and they can also be greatly enlarged by appropriately designing the structural sizes of the controllers. The control voltages applied on the piezoelectric actuators are in reasonable and controllable ranges, especially, they are very low in the band-gaps. Thus, the vibration and wave propagation behaviors of the elastic beam can be actively controlled by the periodically placed piezoelectric patches.

Enhanced fill factor of tandem organic solar cells incorporating a diketopyrrolopyrrole-based low-bandgap polymer and optimized interlayer.

PubMed

Wang, Dong Hwan; Kyaw, Aung Ko Ko; Park, Jong Hyeok

2015-01-01

We demonstrate that reproducible results can be obtained from tandem solar cells based on the wide-bandgap poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4,7-di-2-thienyl-2',1',3'-benzothiadiazole] (PCDTBT) and the diketopyrrolopyrrole (DPP)-based narrow bandgap polymer (DT-PDPP2T-TT) with a decyltetradecyl (DT) and an electron-rich 2,5-di-2-thienylthieno[3,2-b]thiophene (2T-TT) group fabricated using an optimized interlayer (ZnO NPs/ph-n-PEDOT:PSS) [NPs: nanoparticles; ph-n: pH-neutral PEDOT: poly(3,4-ethylenedioxythiophene); PSS: polystyrene sulfonate]. The tandem cells are fabricated by applying a simple process without thermal annealing. The ZnO NP interlayer operates well when the ZnO NPs are dispersed in 2-methoxyethanol, as no precipitation and chemical reactions occur. In addition to the ZnO NP film, we used neutral PEDOT:PSS as a second interlayer which is not affect to the sequential deposited bulk heterojunction (BHJ) active layer of acidification. The power conversion efficiency (PCE) of a tandem device reaches 7.4 % (open-circuit voltage VOC =1.53 V, short-circuit current density JSC =7.3 mA cm(-2) , and fill factor FF=67 %). Furthermore, FF is increased to up to 71 % when another promising large bandgap (bandgap ∼1.94 eV) polymer (PBnDT-FTAZ) is used. The surface of each layer with nanoscale morphology (BHJ1/ZnO NPs film/ph-n-PEDOT:PSS/BHJ2) was examined by means of AFM analysis during sequential processing. The combination of these factors, efficient DPP-based narrow bandgap material and optimized interlayer, leads to the high FF (average approaches 70 %) and reproducibly operating tandem BHJ solar cells. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The effect of Se/Te ratio on transient absorption behavior and nonlinear absorption properties of CuIn0.7Ga0.3(Se1-xTex)2 (0 ≤ x ≤ 1) amorphous semiconductor thin films

NASA Astrophysics Data System (ADS)

Karatay, Ahmet; Küçüköz, Betül; Çankaya, Güven; Ates, Aytunc; Elmali, Ayhan

2017-11-01

The characterization of the CuInSe2 (CIS), CuInGaSe (CIGS) and CuGaSe2 (CGS) based semiconductor thin films are very important role for solar cell and various nonlinear optical applications. In this paper, the amorphous CuIn0.7Ga0.3(Se1-xTex)2 semiconductor thin films (0 ≤ x ≤ 1) were prepared with 60 nm thicknesses by using vacuum evaporation technique. The nonlinear absorption properties and ultrafast transient characteristics were investigated by using open aperture Z-scan and ultrafast pump-probe techniques. The energy bandgap values were calculated by using linear absorption spectra. The bandgap values are found to be varying from 0.67 eV to 1.25 eV for CuIn0.7Ga0.3Te2, CuIn0.7Ga0.3Se1.6Te0.4, CuIn0.7Ga0.3Se0.4Te1.6 and CuIn0.7Ga0.3Se2 thin films. The energy bandgap values decrease with increasing telluride (Te) doping ratio in mixed CuIn0.7Ga0.3(Se1-xTex)2 films. This affects nonlinear characteristics and ultrafast dynamics of amorphous thin films. Ultrafast pump-probe experiments indicated that decreasing of bandgap values with increasing the Te amount switches from the excited state absorption signals to ultrafast bleaching signals. Open aperture Z-scan experiments show that nonlinear absorption properties enhance with decreasing bandgaps values for 65 ps pulse duration at 1064 nm. Highest nonlinear absorption coefficient was found for CuIn0.7Ga0.3Te2 thin film due to having the smallest energy bandgap.

Optimal design of tunable phononic bandgap plates under equibiaxial stretch

NASA Astrophysics Data System (ADS)

Hedayatrasa, Saeid; Abhary, Kazem; Uddin, M. S.; Guest, James K.

2016-05-01

Design and application of phononic crystal (PhCr) acoustic metamaterials has been a topic with tremendous growth of interest in the last decade due to their promising capabilities to manipulate acoustic and elastodynamic waves. Phononic controllability of waves through a particular PhCr is limited only to the spectrums located within its fixed bandgap frequency. Hence the ability to tune a PhCr is desired to add functionality over its variable bandgap frequency or for switchability. Deformation induced bandgap tunability of elastomeric PhCr solids and plates with prescribed topology have been studied by other researchers. Principally the internal stress state and distorted geometry of a deformed phononic crystal plate (PhP) changes its effective stiffness and leads to deformation induced tunability of resultant modal band structure. Thus the microstructural topology of a PhP can be altered so that specific tunability features are met through prescribed deformation. In the present study novel tunable PhPs of this kind with optimized bandgap efficiency-tunability of guided waves are computationally explored and evaluated. Low loss transmission of guided waves throughout thin walled structures makes them ideal for fabrication of low loss ultrasound devices and structural health monitoring purposes. Various tunability targets are defined to enhance or degrade complete bandgaps of plate waves through macroscopic tensile deformation. Elastomeric hyperelastic material is considered which enables recoverable micromechanical deformation under tuning finite stretch. Phononic tunability through stable deformation of phononic lattice is specifically required and so any topology showing buckling instability under assumed deformation is disregarded. Nondominated sorting genetic algorithm (GA) NSGA-II is adopted for evolutionary multiobjective topology optimization of hypothesized tunable PhP with square symmetric unit-cell and relevant topologies are analyzed through finite element method. Following earlier studies by the authors, specialized GA algorithm, topology mapping, assessment and analysis techniques are employed to get feasible porous topologies of assumed thick PhP, efficiently.

Understanding the optical properties of ZnO1-xSx and ZnO1-xSex alloys

NASA Astrophysics Data System (ADS)

Baldissera, Gustavo; Persson, Clas

2016-01-01

ZnO1-xYx with chalcogen element Y exhibits intriguing optoelectronic properties as the alloying strongly impacts the band-gap energy Eg(x). In this work, we analyze and compare the electronic structures and the dielectric responses of Zn(O,S) and Zn(O,Se) alloys by means of the density functional theory and the partially self-consistent GW approach. We model the crystalline stability from the total energies, and the results indicate that Zn(O,S) is more stable as alloy than Zn(O,Se). We demonstrate also that ion relaxation strongly affects total energies, and that the band-gap bowing depends primarily on local relaxation of the bonds. Moreover, we show that the composition dependent band-gap needs to be analyzed by the band anti-crossing model for small alloying concentration, while the alloying band-bowing model is accurate for strong alloying. We find that the Se-based alloys have a stronger change in the band-gap energy (for instance, ΔEg(0.50) = Eg(ZnO) - Eg(x = 0.50) ≈ 2.2 eV) compared with that of the S-based alloy (ΔEg(0.50) = 1.2 eV), mainly due to a stronger relaxation of the Zn-anion bonds that affects the electronic structure near the band edges. The optical properties of the alloys are discussed in terms of the complex dielectric function ɛ(ω) = ɛ1(ω) + iɛ2(ω) and the absorption coefficient α(ω). While the large band-gap bowing directly impacts the low-energy absorption spectra, the high-frequency dielectric constant ɛ∞ is correlated to the intensity of the dielectric response at energies above 4 eV. Therefore, the dielectric constant is only weakly affected by the non-linear band-gap variation. Despite strong structural relaxation, the high absorption coefficients of the alloys demonstrate that the alloys have well-behaved optoelectronic properties.

Design and fabrication of one-dimensional and two- dimensional photonic bandgap devices

NASA Astrophysics Data System (ADS)

Lim, Kuo-Yi

1999-10-01

One-dimensional and two-dimensional photonic bandgap devices have been designed and fabricated using III-V compound semiconductors. The one-dimensional photonic bandgap devices consist of monorail and air-bridge waveguide microcavities, while the two-dimensional photonic bandgap devices consist of light-emitting devices with enhanced extraction efficiency. Fabrication techniques such as gas source molecular beam epitaxy, direct-write electron-beam lithography, reactive ion etching and thermal oxidation of AlxGa1- xAs have been employed. The III-V thermal oxide, in particular, is used as an index confinement material, as a sacrificial material for micromechanical fabrication of the air-bridge microcavity, and in the realization of a wide-bandwidth distributed Bragg reflector. The one-dimensional photonic bandgap waveguide microcavities have been designed to operate in the wavelength regimes of 4.5 m m and 1.55 m m. The devices designed to operate in the 1.55 m m wavelength regime have been optically characterized. The transmission spectra exhibit resonances at around 1.55 m m and cavity quality factors (Q's) ranging from 136 to 334. The resonant modal volume is calculated to be about 0.056 m m3. Tunability in the resonance wavelengths has also been demonstrated by changing the size of the defect in the one-dimensional photonic crystal. The two-dimensional photonic bandgap light-emitting device consists of a In0.51Ga0.49P/In0.2Ga0.8As/In 0.51Ga0.49P quantum well emitting at 980nm with a triangular photonic lattice of holes in the top cladding layer of the quantum well. The photonic crystal prohibits the propagation of guided modes in the semiconductor, thus enhancing the extraction of light vertical to the light-emitting device. A wide-bandwidth GaAs/AlxOy distributed Bragg reflector mirror under the quantum well structure further enhances the extraction of light from the devices. The extraction efficiency of the two-dimensional photonic bandgap light-emitting device is expected to be at least 5 times that of a device without the two-dimensional photonic crystal. A photoluminescence measurement setup has been modified to optically characterize these devices. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.)

A compact perspiration meter system with capacitive humidity sensor for wearable health-care applications

NASA Astrophysics Data System (ADS)

Mitani, Yusuke; Miyaji, Kousuke; Kaneko, Satoshi; Uekura, Takaharu; Momose, Hideya; Johguchi, Koh

2018-04-01

This paper presents a compact wearable perspiration meter system using a 180-nm CMOS technology. With custom chip and board design, the proposed perspiration meter, which can measure a qualitative sweating rate, is integrated into 15 × 20 mm2. From the experimental results, the capacitances of the humidity sensors with analog-to-digital converter and band-gap reference circuits can operate accurately without hysteresis. In addition, a demonstration with simulated human skin is carried out to investigate the sensor’s performance under real environments. The proposed perspiration meter can output values equivalent to a conventional meter. As a result, it is verified that the proposed system can be used as a human sweat sensor for wearable application.

Electrical and Optical Measurements of the Bandgap Energy of a Light-Emitting Diode

ERIC Educational Resources Information Center

Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

2016-01-01

Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy E[subscript g]. In the case of…

First principles calculation of two dimensional antimony and antimony arsenide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pillai, Sharad Babu, E-mail: sbpillai001@gmail.com; Narayan, Som; Jha, Prafulla K.

2016-05-23

This work focuses on the strain dependence of the electronic properties of two dimensional antimony (Sb) material and its alloy with As (SbAs) using density functional theory based first principles calculations. Both systems show indirect bandgap semiconducting character which can be transformed into a direct bandgap material with the application of relatively small strain.

A Fresh Look at the Semiconductor Bandgap Using Constant Current Data

ERIC Educational Resources Information Center

Ocaya, R. O.; Luhanga, P. V. C.

2011-01-01

It is shown that the well-known linear variation of p-n diode terminal voltage with temperature at different fixed forward currents allows easy and accurate determination of the semiconductor ideality factor and bandgap from only two data points. This is possible if the temperature difference required to maintain the same diode voltage drop can be…

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.

PubMed

Ghetmiri, Seyed Amir; Zhou, Yiyin; Margetis, Joe; Al-Kabi, Sattar; Dou, Wei; Mosleh, Aboozar; Du, Wei; Kuchuk, Andrian; Liu, Jifeng; Sun, Greg; Soref, Richard A; Tolle, John; Naseem, Hameed A; Li, Baohua; Mortazavi, Mansour; Yu, Shui-Qing

2017-02-01

A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.

Composition Dependence of the Hydrostatic Pressure Coefficients of the Bandgap of ZnSe(1-x)Te(x) Alloys

NASA Technical Reports Server (NTRS)

Wu, J.; Yu, K. M.; Walukiewicz, W.; Shan, W.; Ager, J. W., III; Haller, E. E.; Miotkowski, I.; Ramdas, A. K.; Su, Ching-Hua

2003-01-01

Optical absorption experiments have been performed using diamond anvil cells to measure the hydrostatic pressure dependence of the fundamental bandgap of ZnSe(sub 1-xTe(sub x) alloys over the entire composition range. The first and second-order pressure coefficients are obtained as a function of composition. Starting from the ZnSe side, the magnitude of both coefficients increases slowly until x approx. 0.7, where the ambient-pressure bandgap reaches a minimum. For larger values of x the coefficients rapidly approach the values of ZnTe. The large deviations of the pressure coefficients from the linear interpolation between ZnSe and ZnTe are explained in terms of the band anticrossing model.

Postgrowth tuning of the bandgap of single-layer molybdenum disulfide films by sulfur/selenium exchange.

PubMed

Ma, Quan; Isarraraz, Miguel; Wang, Chen S; Preciado, Edwin; Klee, Velveth; Bobek, Sarah; Yamaguchi, Koichi; Li, Emily; Odenthal, Patrick Michael; Nguyen, Ariana; Barroso, David; Sun, Dezheng; von Son Palacio, Gretel; Gomez, Michael; Nguyen, Andrew; Le, Duy; Pawin, Greg; Mann, John; Heinz, Tony F; Rahman, Talat Shahnaz; Bartels, Ludwig

2014-05-27

We demonstrate bandgap tuning of a single-layer MoS2 film on SiO2/Si via substitution of its sulfur atoms by selenium through a process of gentle sputtering, exposure to a selenium precursor, and annealing. We characterize the substitution process both for S/S and S/Se replacement. Photoluminescence and, in the latter case, X-ray photoelectron spectroscopy provide direct evidence of optical band gap shift and selenium incorporation, respectively. We discuss our experimental observations, including the limit of the achievable bandgap shift, in terms of the role of stress in the film as elucidated by computational studies, based on density functional theory. The resultant films are stable in vacuum, but deteriorate under optical excitation in air.

Integration of hybrid silicon lasers and electroabsorption modulators.

PubMed

Sysak, Matthew N; Anthes, Joel O; Bowers, John E; Raday, Omri; Jones, Richard

2008-08-18

We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 ?C is achieved with output power >1.0 mW and threshold current of <50 mA. The modulator bandwidth is >2GHz with 5 dB DC extinction.

Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mahesh; Roul, Basanta; Central Research Laboratory, Bharat Electronics, Bangalore-560013

InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.

Bandgap-Engineered Zinc-Tin-Oxide Thin Films for Ultraviolet Sensors.

PubMed

Cheng, Tien-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn

2018-07-01

Zinc-tin-oxide thin-film transistors were prepared by radio frequency magnetron co-sputtering, while an identical zinc-tin-oxide thin film was deposited simultaneously on a clear glass substrate to facilitate measurements of the optical properties. When we adjusted the deposition power of ZnO and SnO2, the bandgap of the amorphous thin film was dominated by the deposition power of SnO2. Since the thin-film transistor has obvious absorption in the ultraviolet region owing to the wide bandgap, the drain current increases with the generation of electron-hole pairs. As part of these investigations, a zinc-tin-oxide thin-film transistor has been fabricated that appears to be very promising for ultraviolet applications.

Composition/bandgap selective dry photochemical etching of semiconductor materials

DOEpatents

Ashby, Carol I. H.; Dishman, James L.

1987-01-01

A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

Continuously tunable devices based on electrical control of dual-frequency liquid crystal filled photonic bandgap fibers

NASA Astrophysics Data System (ADS)

Scolari, Lara; Tanggaard Alkeskjold, Thomas; Riishede, Jesper; Bjarklev, Anders; Sparre Hermann, David; Anawati, Anawati; Dybendal Nielsen, Martin; Bassi, Paolo

2005-09-01

We present an electrically controlled photonic bandgap fiber device obtained by infiltrating the air holes of a photonic crystal fiber (PCF) with a dual-frequency liquid crystal (LC) with pre-tilted molecules. Compared to previously demonstrated devices of this kind, the main new feature of this one is its continuous tunability due to the fact that the used LC does not exhibit reverse tilt domain defects and threshold effects. Furthermore, the dual-frequency features of the LC enables electrical control of the spectral position of the bandgaps towards both shorter and longer wavelengths in the same device. We investigate the dynamics of this device and demonstrate a birefringence controller based on this principle.

Broadband locally resonant metamaterials with graded hierarchical architecture

NASA Astrophysics Data System (ADS)

Liu, Chenchen; Reina, Celia

2018-03-01

We investigate the effect of hierarchical designs on the bandgap structure of periodic lattice systems with inner resonators. A detailed parameter study reveals various interesting features of structures with two levels of hierarchy as compared with one level systems with identical static mass. In particular: (i) their overall bandwidth is approximately equal, yet bounded above by the bandwidth of the single-resonator system; (ii) the number of bandgaps increases with the level of hierarchy; and (iii) the spectrum of bandgap frequencies is also enlarged. Taking advantage of these features, we propose graded hierarchical structures with ultra-broadband properties. These designs are validated over analogous continuum models via finite element simulations, demonstrating their capability to overcome the bandwidth narrowness that is typical of resonant metamaterials.

Quasiperiodic one-dimensional photonic crystals with adjustable multiple photonic bandgaps.

PubMed

Vyunishev, Andrey M; Pankin, Pavel S; Svyakhovskiy, Sergey E; Timofeev, Ivan V; Vetrov, Stepan Ya

2017-09-15

We propose an elegant approach to produce photonic bandgap (PBG) structures with multiple photonic bandgaps by constructing quasiperiodic photonic crystals (QPPCs) composed of a superposition of photonic lattices with different periods. Generally, QPPC structures exhibit both aperiodicity and multiple PBGs due to their long-range order. They are described by a simple analytical expression, instead of quasiperiodic tiling approaches based on substitution rules. Here we describe the optical properties of QPPCs exhibiting two PBGs that can be tuned independently. PBG interband spacing and its depth can be varied by choosing appropriate reciprocal lattice vectors and their amplitudes. These effects are confirmed by the proof-of-concept measurements made for the porous silicon-based QPPC of the appropriate design.

Pseudopotential calculations and photothermal lensing measurements of two-photon absorption in solids

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, W.T. III

1985-11-04

We have studied two-photon absorption in solids theoretically and experimentally. We have shown that it is possible to use accurate band structure techniques to compute two-photon absorption spectra within 15% of measured values in a wide band-gap material, ZnS. The empirical pseudopotential technique that we used is significantly more accurate than previous models of two-photon absorption in zinc blende materials, including present tunneling theories (which are essentially parabolic-band results in disguise) and the nonparabolic-band formalism of Pidgeon et al. and Weiler. The agreement between our predictions and previous measurements allowed us to use ZnS as a reference material in ordermore » to validate a technique for measuring two-photon absorption that was previously untried in solids, pulsed dual-beam thermal lensing. With the validated technique, we examined nonlinear absorption in one other crystal (rutile) and in several glasses, including silicates, borosilicates, and one phosphate glass. Initially, we believed that the absorption edges of all the materials were comparable; however, subsequent evidence suggested that the effective band-gap energies of the glasses were above the energy of two photons in our measurement. Therefore, we attribute the nonlinear absorption that we observed in glasses to impurities or defects. The measured nonlinear absorption coefficients were of the order of a few cm/TW in the glasses and of the order of 10 cm/GW in the crystals, four orders of magnitude higher than in glasses. 292 refs.« less

Electron-Selective TiO 2 Contact for Cu(In,Ga)Se 2 Solar Cells

DOE PAGES

Hsu, Weitse; Sutter-Fella, Carolin M.; Hettick, Mark; ...

2015-11-03

The non-toxic and wide bandgap material TiO 2 is explored as an n-type buffer layer on p-type Cu(In,Ga)Se 2 (CIGS) absorber layer for thin film solar cells. The amorphous TiO 2 thin film deposited by atomic layer deposition process at low temperatures shows conformal coverage on the CIGS absorber layer. Solar cells from non-vacuum deposited CIGS absorbers with TiO 2 buffer layer result in a high short-circuit current density of 38.9 mA/cm 2 as compared to 36.9 mA/cm 2 measured in the reference cell with CdS buffer layer, without compromising open-circuit voltage. The significant photocurrent gain, mainly in the UVmore » part of the spectrum, can be attributed to the low parasitic absorption loss in the ultrathin TiO 2 layer (~10 nm) with a larger bandgap of 3.4 eV compared to 2.4 eV of the traditionally used CdS. Overall the solar cell conversion efficiency was improved from 9.5% to 9.9% by substituting the CdS by TiO 2 on an active cell area of 10.5 mm2. In conclusion, optimized TiO 2/CIGS solar cells show excellent long-term stability. The results imply that TiO 2 is a promising buffer layer material for CIGS solar cells, avoiding the toxic CdS buffer layer with added performance advantage.« less

First-principles study of SnS electronic properties using LDA, PBE and HSE06 functionals

NASA Astrophysics Data System (ADS)

Ibragimova, R.; Ganchenkova, M.; Karazhanov, S.; Marstein, E. S.

2018-03-01

Recently, tin sulphide (SnS) has emerged as a promising alternative to conventional CIGS and CZTC for use in solar cells, possessing such properties as non-toxicity, low cost and production stability. SnS has a high theoretically predicted efficiency above 20%, but the experimentally achieved efficiency so far is as low as 4.36%. The reason for the low achieved efficiency is unclear. One of the powerful tools to get deeper insights about the nature of the problem is first-principles calculation approaches. That is why SnS has become an attractive subject for first-principles calculations recently. Previously calculated data, however, show a widespread of such fundamental value as the bandgap varying from 0.26 to 1.26 eV. In order to understand a reason for that, in this work, we concentrate on a systematic study of calculation parameters effects on the resulting electronic structure, with the particular attention paid to the influence of the exchange-correlation functional chosen for calculations. Several exchange-correlation functionals (LDA, PBE and HSE06) were considered. The systematic analysis has shown that the bandgap variation can result from a tensile/compressive hydrostatic pressure introduced by non-equilibrium lattice parameters used for the calculations. The study of the applicability of three functionals has shown that HSE06 gives the best match to both experimentally obtained bandgap and the XPS valence band spectra. LDA underestimates the bandgap but qualitatively reproduces experimentally measured valence DOS similar to that of HSE06 in contrast to PBE. PBE underestimates the bandgap and does not match to the measured XPS spectra.

Anatase (101)-like Structural Model Revealed for Metastable Rutile TiO2(011) Surface.

PubMed

Xu, Meiling; Shao, Sen; Gao, Bo; Lv, Jian; Li, Quan; Wang, Yanchao; Wang, Hui; Zhang, Lijun; Ma, Yanming

2017-03-08

Titanium dioxide has been widely used as an efficient transition metal oxide photocatalyst. However, its photocatalytic activity is limited to the ultraviolet spectrum range due to the large bandgap beyond 3 eV. Efforts to reduce the bandgap to achieve a broader spectrum range of light absorption have been successfully attempted via the experimental synthesis of dopant-free metastable surface structures of rutile-type TiO 2 (011) 2 × 1. This new surface phase possesses a reduced bandgap of ∼2.1 eV, showing great potential for an excellent photocatalyst covering a wide range of visible light. There is a need to establish the atomistic structure of this metastable surface to understand the physical cause for the bandgap reduction and to improve the future design of photocatalysts. Here, we report computational investigations in an effort to unravel this surface structure via swarm structure-searching simulations. The established structure adopts the anatase (101)-like structure model, where the topmost 2-fold O atoms form a quasi-hexagonal surface pattern and bond with the unsaturated 5-fold and 4-fold Ti atoms in the next layer. The predicted anatase (101)-like surface model can naturally explain the experimental observation of the STM images, the electronic bandgap, and the oxidation state of Ti 4+ . Dangling bonds on the anatase (101)-like surface are abundant making it a superior photocatalyst. First-principles molecular dynamics simulations have supported the high photocatalytic activity by showing that water and formic acid molecules dissociate spontaneously on the anatase (101)-like surface.

Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

PubMed Central

Biswas, Subhajit; Doherty, Jessica; Saladukha, Dzianis; Ramasse, Quentin; Majumdar, Dipanwita; Upmanyu, Moneesh; Singha, Achintya; Ochalski, Tomasz; Morris, Michael A.; Holmes, Justin D.

2016-01-01

The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental semiconductor. Here, we describe the fabrication of uniform diameter, direct bandgap Ge1−xSnx alloy nanowires, with a Sn incorporation up to 9.2 at.%, far in excess of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-up growth paradigm using noble metal and metal alloy catalysts. Metal alloy catalysts permitted a greater inclusion of Sn in Ge nanowires compared with conventional Au catalysts, when used during vapour–liquid–solid growth. The addition of an annealing step close to the Ge-Sn eutectic temperature (230 °C) during cool-down, further facilitated the excessive dissolution of Sn in the nanowires. Sn was distributed throughout the Ge nanowire lattice with no metallic Sn segregation or precipitation at the surface or within the bulk of the nanowires. The non-equilibrium incorporation of Sn into the Ge nanowires can be understood in terms of a kinetic trapping model for impurity incorporation at the triple-phase boundary during growth. PMID:27095012

Optical bandgap modelling from the structural arrangement of carbon nanotubes.

PubMed

Butler, Timothy P; Rashid, Ijaz; Montelongo, Yunuen; Amaratunga, Gehan A J; Butt, Haider

2018-06-14

The optical bandgap properties of vertically-aligned carbon nanotube (VACNT) arrays were probed through their interaction with white light, with the light reflected from the rotating arrays measured with a spectrometer. The precise deterministic control over the structure of vertically-aligned carbon nanotube arrays through electron beam lithography and well-controlled growth conditions brings with it the ability to produce exotic photonic crystals over a relatively large area. The characterisation of the behaviour of these materials in the presence of light is a necessary first step toward application. Relatively large area array structures of high-quality VACNTs were fabricated in square, hexagonal, circular and pseudorandom patterned arrays with length scales on the order of those of visible light for the purpose of investigating how they may be used to manipulate an impinging light beam. In order to investigate the optical properties of these arrays a set of measurement apparatus was designed which allowed the accurate measurement of their optical bandgap characteristics. The patterned samples were rotated under the illuminating white light beam, revealing interesting optical bandgap results caused by the changing patterns and relative positions of the scattering elements (VACNTs).

Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1-xSnx nanowires

NASA Astrophysics Data System (ADS)

Biswas, Subhajit; Doherty, Jessica; Saladukha, Dzianis; Ramasse, Quentin; Majumdar, Dipanwita; Upmanyu, Moneesh; Singha, Achintya; Ochalski, Tomasz; Morris, Michael A.; Holmes, Justin D.

2016-04-01

The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental semiconductor. Here, we describe the fabrication of uniform diameter, direct bandgap Ge1-xSnx alloy nanowires, with a Sn incorporation up to 9.2 at.%, far in excess of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-up growth paradigm using noble metal and metal alloy catalysts. Metal alloy catalysts permitted a greater inclusion of Sn in Ge nanowires compared with conventional Au catalysts, when used during vapour-liquid-solid growth. The addition of an annealing step close to the Ge-Sn eutectic temperature (230 °C) during cool-down, further facilitated the excessive dissolution of Sn in the nanowires. Sn was distributed throughout the Ge nanowire lattice with no metallic Sn segregation or precipitation at the surface or within the bulk of the nanowires. The non-equilibrium incorporation of Sn into the Ge nanowires can be understood in terms of a kinetic trapping model for impurity incorporation at the triple-phase boundary during growth.

Effect of annealing on the sub-bandgap, defects and trapping states of ZnO nanostructures

NASA Astrophysics Data System (ADS)

Wahyuono, Ruri Agung; Hermann-Westendorf, Felix; Dellith, Andrea; Schmidt, Christa; Dellith, Jan; Plentz, Jonathan; Schulz, Martin; Presselt, Martin; Seyring, Martin; Rettenmeyer, Markus; Dietzek, Benjamin

2017-02-01

Annealing treatment was applied to different mesoporous ZnO nanostructures prepared by wet chemical synthesis, i.e. nanoflowers (NFs), spherical aggregates (SPs), and nanorods (NRs). The sub-bandgap, defect properties as well as the trapping state characteristics after annealing were characterized spectroscopically, including ultrasensitive photothermal deflection spectroscopy (PDS), photoluminescence and photo-electrochemical methods. The comprehensive experimental analysis reveals that annealing alters both the bandgap and the sub-bandgap. The defect concentration and the density of surface traps in the ZnO nanostructures are suppressed upon annealing as deduced from photoluminescence and open-circuit voltage decay analysis. The photo-electrochemical investigations reveal that the surface traps dominate the near conduction band edge of ZnO and, hence, lead to high recombination rates when used in DSSCs. The density of bulk traps in ZnO SPs is higher than that in ZnO NFs and ZnO NRs and promote lower recombination loss between photoinjected electrons with the electrolyte-oxidized species on the surface. The highest power conversion efficiency of ZnO NFs-, ZnO SPs-, and ZnO NRs-based DSSC obtained in our system is 2.0, 4.5, and 1.8%, respectively.

Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites

DOE PAGES

Stoddard, Ryan J.; Eickemeyer, Felix T.; Katahara, John K.; ...

2017-06-21

High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83Cs 0.17Pb(I 0.66Br 0.34)more » 3, resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.« less

A polymer tandem solar cell with 10.6% power conversion efficiency.

PubMed

You, Jingbi; Dou, Letian; Yoshimura, Ken; Kato, Takehito; Ohya, Kenichiro; Moriarty, Tom; Emery, Keith; Chen, Chun-Chao; Gao, Jing; Li, Gang; Yang, Yang

2013-01-01

An effective way to improve polymer solar cell efficiency is to use a tandem structure, as a broader part of the spectrum of solar radiation is used and the thermalization loss of photon energy is minimized. In the past, the lack of high-performance low-bandgap polymers was the major limiting factor for achieving high-performance tandem solar cell. Here we report the development of a high-performance low bandgap polymer (bandgap <1.4 eV), poly[2,7-(5,5-bis-(3,7-dimethyloctyl)-5H-dithieno[3,2-b:2',3'-d]pyran)-alt-4,7-(5,6-difluoro-2,1,3-benzothia diazole)] with a bandgap of 1.38 eV, high mobility, deep highest occupied molecular orbital. As a result, a single-junction device shows high external quantum efficiency of >60% and spectral response that extends to 900 nm, with a power conversion efficiency of 7.9%. The polymer enables a solution processed tandem solar cell with certified 10.6% power conversion efficiency under standard reporting conditions (25 °C, 1,000 Wm(-2), IEC 60904-3 global), which is the first certified polymer solar cell efficiency over 10%.

A polymer tandem solar cell with 10.6% power conversion efficiency

PubMed Central

You, Jingbi; Dou, Letian; Yoshimura, Ken; Kato, Takehito; Ohya, Kenichiro; Moriarty, Tom; Emery, Keith; Chen, Chun-Chao; Gao, Jing; Li, Gang; Yang, Yang

2013-01-01

An effective way to improve polymer solar cell efficiency is to use a tandem structure, as a broader part of the spectrum of solar radiation is used and the thermalization loss of photon energy is minimized. In the past, the lack of high-performance low-bandgap polymers was the major limiting factor for achieving high-performance tandem solar cell. Here we report the development of a high-performance low bandgap polymer (bandgap <1.4 eV), poly[2,7-(5,5-bis-(3,7-dimethyloctyl)-5H-dithieno[3,2-b:2′,3′-d]pyran)-alt-4,7-(5,6-difluoro-2,1,3-benzothia diazole)] with a bandgap of 1.38 eV, high mobility, deep highest occupied molecular orbital. As a result, a single-junction device shows high external quantum efficiency of >60% and spectral response that extends to 900 nm, with a power conversion efficiency of 7.9%. The polymer enables a solution processed tandem solar cell with certified 10.6% power conversion efficiency under standard reporting conditions (25 °C, 1,000 Wm−2, IEC 60904-3 global), which is the first certified polymer solar cell efficiency over 10%. PMID:23385590

Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites.

PubMed

Stoddard, Ryan J; Eickemeyer, Felix T; Katahara, John K; Hillhouse, Hugh W

2017-07-20

High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83 Cs 0.17 Pb(I 0.66 Br 0.34 ) 3 , resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.

Tinene: a two-dimensional Dirac material with a 72 meV band gap.

PubMed

Cai, Bo; Zhang, Shengli; Hu, Ziyu; Hu, Yonghong; Zou, Yousheng; Zeng, Haibo

2015-05-21

Dirac materials have attracted great interest for both fundamental research and electronic devices due to their unique band structures, but the usual near zero bandgap of graphene results in a poor on-off ratio in the corresponding transistors. Here, we report on tinene, monolayer gray tin, as a new two-dimensional material with both Dirac characteristics and a remarkable 72 meV bandgap based on density functional theory calculations. Compared with silicene and germanene, tinene has a similar hexagonal honeycomb monolayer structure, but it has an obviously larger buckling height (∼0.70 Å). Interestingly, such a moderate buckling structure results in phonon dispersion without appreciable imaginary modes, indicating the strong dynamic stability of tinene. Significantly, a distinct transformation is discovered from the band structure that six Dirac cones would appear at high symmetry K points in the first Brillouin zone when gray tin is thinned from the bulk to monolayer, but a bandgap as large as 72 meV is still preserved. Considering the recent successful realization of silicene and germanene with a similar structure, the predicted stable tinene with Dirac characteristics and a suitable bandgap is a possibility for the "more than Moore" materials and devices.

Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au; Jolley, G.; Umana-Membreno, G. A.

2014-08-28

Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs basedmore » on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10 nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10 nm regime.« less

Photonic Bandgaps in Photonic Molecules

NASA Technical Reports Server (NTRS)

Smith, David D.; Chang, Hongrok; Gates, Amanda L.; Fuller, Kirk A.; Gregory, Don A.; Witherow, William K.; Paley, Mark S.; Frazier, Donald O.; Curreri, Peter A. (Technical Monitor)

2002-01-01

This talk will focus on photonic bandgaps that arise due to nearly free photon and tight-binding effects in coupled microparticle and ring-resonator systems. The Mie formulation for homogeneous spheres is generalized to handle core/shell systems and multiple concentric layers in a manner that exploits an analogy with stratified planar systems, thereby allowing concentric multi-layered structures to be treated as photonic bandgap (PBG) materials. Representative results from a Mie code employing this analogy demonstrate that photonic bands arising from nearly free photon effects are easily observed in the backscattering, asymmetry parameter, and albedo for periodic quarter-wave concentric layers, though are not readily apparent in extinction spectra. Rather, the periodicity simply alters the scattering profile, enhancing the ratio of backscattering to forward scattering inside the bandgap, in direct analogy with planar quarter-wave multilayers. PBGs arising from tight-binding may also be observed when the layers (or rings) are designed such that the coupling between them is weak. We demonstrate that for a structure consisting of N coupled micro-resonators, the morphology dependent resonances split into N higher-Q modes, in direct analogy with other types of oscillators, and that this splitting ultimately results in PBGs which can lead to enhanced nonlinear optical effects.

In vivo imaging of the morphology and changes in pH along the gastrointestinal tract of Japanese medaka by photonic band-gap hydrogel microspheres.

PubMed

Du, Xuemin; Lei, Ngai-Yu; Hu, Peng; Lei, Zhang; Ong, Daniel Hock-Chun; Ge, Xuewu; Zhang, Zhicheng; Lam, Michael Hon-Wah

2013-07-17

Colloidal crystalline microspheres with photonic band-gap properties responsive to media pH have been developed for in vivo imaging purposes. These colloidal crystalline microspheres were constructed from monodispersed core-shell nano-size particles with poly(styrene-co-acrylic acid) (PS-co-PAA) cores and poly(acrylic acid-co-N-isopropylacrylamide) (PAA-co-PNIPAM) hydrogel shells cross-linked by N,N'-methylenebisacrylamide. A significant shift in the photonic band-gap properties of these colloidal crystalline microspheres was observed in the pH range of 4-5. This was caused by the discontinuous volume phase transition of the hydrogel coating, due to the protonation/deprotonation of its acrylic acid moieties, on the core-shell nano-sized particles within the microspheres. The in vivo imaging capability of these pH-responsive photonic microspheres was demonstrated on a test organism - Japanese medaka, Oryzia latipes - in which the morphology and change in pH along their gastrointestinal (GI) tracts were revealed under an ordinary optical microscope. This work illustrates the potential of stimuli-responsive photonic band-gap materials in tissue-/organ-level in vivo bio-imaging. Copyright © 2013 Elsevier B.V. All rights reserved.

Composition/bandgap selective dry photochemical etching of semiconductor materials

DOEpatents

Ashby, C.I.H.; Dishman, J.L.

1985-10-11

Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

SiP monolayers: New 2D structures of group IV-V compounds for visible-light photohydrolytic catalysts

NASA Astrophysics Data System (ADS)

Ma, Zhinan; Zhuang, Jibin; Zhang, Xu; Zhou, Zhen

2018-06-01

Because of graphene and phosphorene, two-dimensional (2D) layered materials of group IV and group V elements arouse great interest. However, group IV-V monolayers have not received due attention. In this work, three types of SiP monolayers were computationally designed to explore their electronic structure and optical properties. Computations confirm the stability of these monolayers, which are all indirect-bandgap semiconductors with bandgaps in the range 1.38-2.21 eV. The bandgaps straddle the redox potentials of water at pH = 0, indicating the potential of the monolayers for use as watersplitting photocatalysts. The computed optical properties demonstrate that certain monolayers of SiP 2D materials are absorbers of visible light and would serve as good candidates for optoelectronic devices.

Passive band-gap reconfiguration born from bifurcation asymmetry.

PubMed

Bernard, Brian P; Mann, Brian P

2013-11-01

Current periodic structures are constrained to have fixed energy transmission behavior unless active control or component replacement is used to alter their wave propagation characteristics. The introduction of nonlinearity to generate multiple stable equilibria is an alternative strategy for realizing distinct energy propagation behaviors. We investigate the creation of a reconfigurable band-gap system by implementing passive switching between multiple stable states of equilibrium, to alter the level of energy attenuation in response to environmental stimuli. The ability to avoid potentially catastrophic loads is demonstrated by tailoring the bandpass and band-gap regions to coalesce for two stable equilibria and varying an external load parameter to trigger a bifurcation. The proposed phenomenon could be utilized in remote or autonomous applications where component modifications and active control are impractical.

InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

NASA Technical Reports Server (NTRS)

Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

1995-01-01

A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

Electrically and mechanically induced long period gratings in liquid crystal photonic bandgap fibers

NASA Astrophysics Data System (ADS)

Noordegraaf, Danny; Scolari, Lara; Lægsgaard, Jesper; Rindorf, Lars; Tanggaard Alkeskjold, Thomas

2007-06-01

We demonstrate electrically and mechanically induced long period gratings (LPGs) in a photonic crystal fiber (PCF) filled with a high-index liquid crystal. The presence of the liquid crystal changes the guiding properties of the fiber from an index guiding fiber to a photonic bandgap guiding fiber - a so called liquid crystal photonic bandgap (LCPBG) fiber. Both the strength and resonance wavelength of the gratings are highly tunable. By adjusting the amplitude of the applied electric field, the grating strength can be tuned and by changing the temperature, the resonance wavelength can be tuned as well. Numerical calculations of the higher order modes of the fiber cladding are presented, allowing the resonance wavelengths to be calculated. A high polarization dependent loss of the induced gratings is also observed.

Direct bandgap materials based on the thin films of SexTe100 − x nanoparticles

PubMed Central

2012-01-01

In this study, we fabricated thin films of SexTe100 − x (x = 0, 3, 6, 9, 12, and 24) nanoparticles using thermal evaporation technique. The results obtained by X-ray diffraction show that the as-synthesized nanoparticles have polycrystalline structure, but their crystallinity decreases by increasing the concentration of Se. They were found to have direct bandgap (Eg), whose value increases by increasing the Se content. These results are completely different than those obtained in the films of SexTe100 − x microstructure counterparts. Photoluminescence and Raman spectra for these films were also demonstrated. The remarkable results obtained in these nanoparticles specially their controlled direct bandgap might be useful for the development of optical disks and other semiconductor devices. PMID:22978714

Tungsten-incorporation induced red-shift in the bandgap of gallium oxide thin films

NASA Astrophysics Data System (ADS)

Rubio, E. J.; Ramana, C. V.

2013-05-01

Tungsten (W) incorporated Ga2O3 films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. The structure and optical properties of W-incorporated Ga2O3 films were evaluated using X-ray diffraction, scanning electron microscopy, and spectrophotometric measurements. No secondary phase formation was observed in W-incorporated Ga2O3 films. W-induced effects were significant on the structure and optical properties of Ga2O3 films. The bandgap of Ga2O3 films without W-incorporation was ˜5 eV. Red-shift in the bandgap was noted with increasing W-concentration indicating the electronic structure changes in W-Ga2O3 films. A functional relationship between W-concentration and optical property is discussed.

Luminescence in Conjugated Molecular Materials under Sub-bandgap Excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

So, Franky

2014-05-08

Light emission in semiconductors occurs when they are under optical and electrical excitation with energy larger than the bandgap energy. In some low-dimensional semiconductor heterostructure systems, this thermodynamic limit can be violated due to radiative Auger recombination (AR), a process in which the sub-bandgap energy released from a recombined electron-hole pair is transferred to a third particle leading to radiative band-to-band recombination.1 Thus far, photoluminescence up-conversion phenomenon has been observed in some low dimensional semiconductor systems, and the effect is very weak and it can only be observed at low temperatures. Recently, we discovered that efficient electroluminescence in poly[2-methoxy-5-(2’-ethylhexyloxy)-1, phenylenevinylene]more » (MEH-PPV) polymer light-emitting devices (PLEDs) at drive voltages below its bandgap voltage could be observed when a ZnO nanoparticles (NPs) electron injection layer was inserted between the polymer and the aluminum electrode. Specifically, emitted photons with energy of 2.13 eV can be detected at operating voltages as low as 1.2 V at room temperature. Based on these data, we propose that the sub-bandgap turn-on in the MEH-PPV device is due to an Auger-assisted energy up-conversion process. The significance of this discovery is three-fold. First, radiative recombination occurs at operating voltages below the thermodynamic bandgap voltage. This process can significantly reduce the device operating voltage. For example, the current density of the device with the ZnO NC layer is almost two orders of magnitude higher than that of the device without the NC layer. Second, a reactive metal is no longer needed for the cathode. Third, this electroluminescence up-conversion process can be applied to inorganic semiconductors systems as well and their operation voltages of inorganic LEDs can be reduced to about half of the bandgap energy. Based on our initial data, we propose that the sub-bandgap turn-on in MEH-PPV devices is due to Auger-assisted energy up-conversion process. Specifically, we propose that the up-conversion process is due to charge accumulation at the polymer/NPs interface. This model requires that holes should be the dominant carriers in the polymer and the polymer/ZnO NCs heterojunction should be a type II alignment. In order to determine the mechanism of the up-conversion process, we will characterize devices fabricated using polymers with different carrier transporting properties to determine whether hole accumulation at the polymer/nanocrystals is required. Likewise, we will also use NPs with different electronic structures to fabricate devices to determine how electron accumulation affects the up-conversion process. Finally, we will measure quantitatively the interface charge accumulation by electroabsorption and correlate the results with the up-conversion photoluminescence efficiency measurements under an applied electric field.« less

Achieving high performance polymer tandem solar cells via novel materials design

NASA Astrophysics Data System (ADS)

Dou, Letian

Organic photovoltaic (OPV) devices show great promise in low-cost, flexible, lightweight, and large-area energy-generation applications. Nonetheless, most of the materials designed today always suffer from the inherent disadvantage of not having a broad absorption range, and relatively low mobility, which limit the utilization of the full solar spectrum. Tandem solar cells provide an effective way to harvest a broader spectrum of solar radiation by combining two or more solar cells with different absorption bands. However, for polymer solar cells, the performance of tandem devices lags behind single-layer solar cells mainly due to the lack of suitable low-bandgap polymers (near-IR absorbing polymers). In this dissertation, in order to achieve high performance, we focus on design and synthesis of novel low bandgap polymers specifically for tandem solar cells. In Chapter 3, I demonstrate highly efficient single junction and tandem polymer solar cells featuring a spectrally matched low-bandgap conjugated polymer (PBDTT-DPP: bandgap, ˜1.44 eV). The polymer has a backbone based on alternating benzodithiophene and diketopyrrolopyrrole units. A single-layer device based on the polymer provides a power conversion efficiency of ˜6%. When the polymer is applied to tandem solar cells, a power conversion efficiency of 8.62% is achieved, which was the highest certified efficiency for a polymer solar cell. To further improve this material system, in Chapter 4, I show that the reduction of the bandgap and the enhancement of the charge transport properties of the low bandgap polymer PBDTT-DPP can be accomplished simultaneously by substituting the sulfur atoms on the DPP unit with selenium atoms. The newly designed polymer PBDTT-SeDPP (Eg = 1.38 eV) shows excellent photovoltaic performance in single junction devices with PCEs over 7% and photo-response up to 900 nm. Tandem polymer solar cells based on PBDTT-SeDPP are also demonstrated with a 9.5% PCE, which are more than 10% enhancement over those based on PBDTT-DPP. Finally, in Chapter 5, I demonstrate a new polymer system based on alternating dithienopyran and benzothiadiazole units with a bandgap of 1.38 eV, high mobility, deep highest occupied molecular orbital. As a result, a single-junction device shows high external quantum efficiency of >60% and spectral response that extends to 900 nm, with a power conversion efficiency of 7.9%. The polymer enables a solution processed tandem solar cell with certified 10.6% power conversion efficiency under standard reporting conditions, which is the first certified polymer solar cell efficiency over 10%.

Competing Photocurrent Mechanisms in Quasi-Metallic Carbon Nanotube pn Devices.

PubMed

Amer, Moh R; Chang, Shun-Wen; Cronin, Stephen B

2015-07-01

Photodetectors based on quasi-metallic carbon nanotubes exhibit unique optoelectronic properties. Due to their small bandgap, photocurrent generation is possible at room temperature. The origin of this photocurrent is investigated to determine the underlying mechanism, which can be photothermoelectric effect or photovoltaic effect, depending on the bandgap magnitude of the quasi-metallic nanotube. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

DTIC Science & Technology

2017-02-03

particularly for power electronics applications in hybrid and electric vehicles, power supplies, and photovoltaic ( PV ) inverters. Ultrawide-Bandgap...the one hand, Ga2O3-based optoelectronic devices such as solar -blind DUV photodetectors are expected to be useful for a variety of applications (e.g...system, and which are core components in aircraft, spacecraft, solar photovoltaic installations, electric vehicles, and military systems such as all

Amorphous silicon solar cell allowing infrared transmission

DOEpatents

Carlson, David E.

1979-01-01

An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

Wide bandgap matrix switcher, amplifier and oscillator

DOEpatents

Sampayan, Stephen

2016-08-16

An electronic device comprising an optical gate, an electrical input an electrical output and a wide bandgap material positioned between the electrical input and the electrical output to control an amount of current flowing between the electrical input and the electrical output in response to a stimulus received at the optical gate can be used in wideband telecommunication applications in transmission of multi-channel signals.

Optical Properties of III-V Semiconductor Nanostructures and Quantum Wells

DTIC Science & Technology

2006-12-31

measurements were made using a BOMEM Fourier-transform infrared spectrometer in conjunction with a continuous flow cryostat. A low- noise current...infrared photodetector ( QWIP ). Quantum well infrared photodetectors are designed from wide bandgap (III-V) semiconductor materials in such a way where...quantum confinement is created. Unlike HgCdTe which utilizes electronic transitions across the fundamental bandgap, QWIPs relies on transitions between

Towards time-of-flight PET with a semiconductor detector.

PubMed

Ariño-Estrada, Gerard; Mitchell, Gregory S; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J; Shah, Kanai S; Cherry, Simon R

2018-02-16

The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

Towards time-of-flight PET with a semiconductor detector

NASA Astrophysics Data System (ADS)

Ariño-Estrada, Gerard; Mitchell, Gregory S.; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J.; Shah, Kanai S.; Cherry, Simon R.

2018-02-01

The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

GaN-Based Detector Enabling Technology for Next Generation Ultraviolet Planetary Missions

NASA Technical Reports Server (NTRS)

Aslam, S.; Gronoff, G.; Hewagama, T.; Janz, S.; Kotecki, C.

2012-01-01

The ternary alloy AlN-GaN-InN system provides several distinct advantages for the development of UV detectors for future planetary missions. First, (InN), (GaN) and (AlN) have direct bandgaps 0.8, 3.4 and 6.2 eV, respectively, with corresponding wavelength cutoffs of 1550 nm, 365 nm and 200 nm. Since they are miscible with each other, these nitrides form complete series of indium gallium nitride (In(sub l-x)Ga(sub x)N) and aluminum gallium nitride (Al(sub l-x)Ga(sub x)N) alloys thus allowing the development of detectors with a wavelength cut-off anywhere in this range. For the 2S0-365 nm spectral wavelength range AlGaN detectors can be designed to give a 1000x solar radiation rejection at cut-off wavelength of 325 nm, than can be achieved with Si based detectors. For tailored wavelength cut-offs in the 365-4S0 nm range, InGaN based detectors can be fabricated, which still give 20-40x better solar radiation rejection than Si based detectors. This reduced need for blocking filters greatly increases the Detective Quantum efficiency (DQE) and simplifies the instrument's optical systems. Second, the wide direct bandgap reduces the thermally generated dark current to levels allowing many observations to be performed at room temperature. Third, compared to narrow bandgap materials, wide bandgap semiconductors are significantly more radiation tolerant. Finally, with the use of an (AI, In)GaN array, the overall system cost is reduced by eliminating stringent Si CCD cooling systems. Compared to silicon, GaN based detectors have superior QE based on a direct bandgap and longer absorption lengths in the UV.

Tunable two-dimensional acoustic meta-structure composed of funnel-shaped unit cells with multi-band negative acoustic property

NASA Astrophysics Data System (ADS)

Cho, Sungjin; Kim, Boseung; Min, Dongki; Park, Junhong

2015-10-01

This paper presents a two-dimensional heat-exhaust and sound-proof acoustic meta-structure exhibiting tunable multi-band negative effective mass density. The meta-structure was composed of periodic funnel-shaped units in a square lattice. Each unit cell operates simultaneously as a Helmholtz resonator (HR) and an extended pipe chamber resonator (EPCR), leading to a negative effective mass density creating bandgaps for incident sound energy dissipation without transmission. This structure allowed large heat-flow through the cross-sectional area of the extended pipe since the resonance was generated by acoustic elements without using solid membranes. The pipes were horizontally directed to a flow source to enable small flow resistance for cooling. Measurements of the sound transmission were performed using a two-load, four-microphone method for a unit cell and small reverberation chamber for two-dimensional panel to characterize the acoustic performance. The effective mass density showed significant frequency dependent variation exhibiting negative values at the specific bandgaps, while the effective bulk modulus was not affected by the resonator. Theoretical models incorporating local resonances in the multiple resonator units were proposed to analyze the noise reduction mechanism. The acoustic meta-structure parameters to create broader frequency bandgaps were investigated using the theoretical model. The negative effective mass density was calculated to investigate the creation of the bandgaps. The effects of design parameters such as length, cross-sectional area, and volume of the HR; length and cross-sectional area of the EPCR were analyzed. To maximize the frequency band gap, the suggested acoustic meta-structure panel, small neck length, and cross-sectional area of the HR, large EPCR length was advantageous. The bandgaps became broader when the two resonant frequencies were similar.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04688a

Structural and electronic properties of the V-V compounds isoelectronic to GaN and isostructural to gray arsenic

NASA Astrophysics Data System (ADS)

Yang, Zhao; Han, Dan; Chen, Guohong; Chen, Shiyou

2018-03-01

The III-V binary compound semiconductors such as GaN, GaP, InN and InP have extensive applications in various optoelectronic, microwave and power-electronic devices. Using first-principles calculation, we systematically studied the structural and electronic properties of the V-V binary compounds (BiN, BiP, SbN and SbP) that are isoelectronic to GaN, GaP, InN and InP if Bi and Sb are in the +3 valence state. Interestingly, we found that the ground-state structures of BiP, SbN and SbP have the R-3m symmetry and are isostructural to the layered structure of gray arsenic, whereas BiN prefers a different ground-state structure with the C2 symmetry. Electronic structure calculations showed that the bulk BiN is a narrow bandgap semiconductor for its bandgap is about 0.2 eV. In contrast, BiP, SbN and SbP are metallic. The layered ground-state structure of the V-V binary compounds motivates us to study the electronic properties of their few-layer structures. As the structure becomes monolayer, their bandgaps increase significantly and are all in the range from about 1 eV to 1.7 eV, which are comparative to the bandgap of the monolayer gray arsenic. The monolayer BiP, SbN and SbP have indirect bandgaps, and they show a semiconductor-metal transition as the number of layers increase. Interestingly, the monolayer BiP has the largest splitting (350 meV) of the CBM valley, and thus may have potential application in novel spintronics and valleytronics devices.

Non-Fullerene Polymer Solar Cells Based on Alkylthio and Fluorine Substituted 2D-Conjugated Polymers Reach 9.5% Efficiency.

PubMed

Bin, Haijun; Zhang, Zhi-Guo; Gao, Liang; Chen, Shanshan; Zhong, Lian; Xue, Lingwei; Yang, Changduk; Li, Yongfang

2016-04-06

Non-fullerene polymer solar cells (PSCs) with solution-processable n-type organic semiconductor (n-OS) as acceptor have seen rapid progress recently owing to the synthesis of new low bandgap n-OS, such as ITIC. To further increase power conversion efficiency (PCE) of the devices, it is of a great challenge to develop suitable polymer donor material that matches well with the low bandgap n-OS acceptors thus providing complementary absorption and nanoscaled blend morphology, as well as suppressed recombination and minimized energy loss. To address this challenge, we synthesized three medium bandgap 2D-conjugated bithienyl-benzodithiophene-alt-fluorobenzotriazole copolymers J52, J60, and J61 for the application as donor in the PSCs with low bandgap n-OS ITIC as acceptor. The three polymers were designed with branched alkyl (J52), branched alkylthio (J60), and linear alkylthio (J61) substituent on the thiophene conjugated side chain of the benzodithiophene (BDT) units for studying effect of the substituents on the photovoltaic performance of the polymers. The alkylthio side chain, red-shifted absorption down-shifted the highest occupied molecular orbital (HOMO) level and improved crystallinity of the 2D conjugated polymers. With linear alkylthio side chain, the tailored polymer J61 exhibits an enhanced JSC of 17.43 mA/cm(2), a high VOC of 0.89 V, and a PCE of 9.53% in the best non-fullerene PSCs with the polymer as donor and ITIC as acceptor. To the best of our knowledge, the PCE of 9.53% is one of the highest values reported in literature to date for the non-fullerene PSCs. The results indicate that J61 is a promising medium bandgap polymer donor in non-fullerene PSCs.

Low-noise AlInAsSb avalanche photodiode

NASA Astrophysics Data System (ADS)

Woodson, Madison E.; Ren, Min; Maddox, Scott J.; Chen, Yaojia; Bank, Scott R.; Campbell, Joe C.

2016-02-01

We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, Al0.7In0.3As0.3Sb0.7, grown on GaSb. The bandgap energy and thus the cutoff wavelength are similar to silicon; however, since the bandgap of Al0.7In0.3As0.3Sb0.7 is direct, its absorption depth is 5 to 10 times shorter than indirect-bandgap silicon, potentially enabling significantly higher operating bandwidths. In addition, unlike other III-V avalanche photodiodes that operate in the visible or near infrared, the excess noise factor is comparable to or below that of silicon, with a k-value of approximately 0.015. Furthermore, the wide array of absorber regions compatible with GaSb substrates enable cutoff wavelengths ranging from 1 μm to 12 μm.

Thermal stress effects on the flexural wave bandgap of a two-dimensional locally resonant acoustic metamaterial

NASA Astrophysics Data System (ADS)

Li, Zhen; Zhu, Yun; Li, Yueming

2018-05-01

The elastic wave bandgap is obviously affected by heat while considering thermal stress. Nevertheless, the flat band, occurring in the lowest flexural branch, has not yet been explained clearly. This study investigates the influence of thermal stress on a flexural wave bandgap in a two-dimensional three-component acoustic metamaterial. Simulation results demonstrate that the band structure shifts to a lower frequency range, and the vibration response appears at a larger amplitude due to the bending stiffness being softened by the compressive membrane force. In addition, the first flexural band reduces to zero frequency in the central Brillouin zone. By viewing the vibration modes of the proposed unit cell, it is found that the out-of-plane mode shape attenuates with increasing temperature, while the in-plane vibration modes are unaffected by thermal stress.

Effects of weak nonlinearity on the dispersion relation and frequency band-gaps of a periodic Bernoulli–Euler beam

PubMed Central

Thomsen, Jon Juel

2016-01-01

The paper deals with analytically predicting the effects of weak nonlinearity on the dispersion relation and frequency band-gaps of a periodic Bernoulli–Euler beam performing bending oscillations. Two cases are considered: (i) large transverse deflections, where nonlinear (true) curvature, nonlinear material and nonlinear inertia owing to longitudinal motions of the beam are taken into account, and (ii) mid-plane stretching nonlinearity. A novel approach is employed, the method of varying amplitudes. As a result, the isolated as well as combined effects of the considered sources of nonlinearities are revealed. It is shown that nonlinear inertia has the most substantial impact on the dispersion relation of a non-uniform beam by removing all frequency band-gaps. Explanations of the revealed effects are suggested, and validated by experiments and numerical simulation. PMID:27118899

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

DOE PAGES

Kaplar, R. J.; Allerman, A. A.; Armstrong, A. M.; ...

2016-12-20

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludesmore » with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.« less

Thermodynamic efficiency limits of classical and bifacial multi-junction tandem solar cells: An analytical approach

NASA Astrophysics Data System (ADS)

Alam, Muhammad Ashraful; Khan, M. Ryyan

2016-10-01

Bifacial tandem cells promise to reduce three fundamental losses (i.e., above-bandgap, below bandgap, and the uncollected light between panels) inherent in classical single junction photovoltaic (PV) systems. The successive filtering of light through the bandgap cascade and the requirement of current continuity make optimization of tandem cells difficult and accessible only to numerical solution through computer modeling. The challenge is even more complicated for bifacial design. In this paper, we use an elegantly simple analytical approach to show that the essential physics of optimization is intuitively obvious, and deeply insightful results can be obtained with a few lines of algebra. This powerful approach reproduces, as special cases, all of the known results of conventional and bifacial tandem cells and highlights the asymptotic efficiency gain of these technologies.

Ge1-xSnx alloys synthesized by ion implantation and pulsed laser melting

NASA Astrophysics Data System (ADS)

Gao, Kun; Prucnal, S.; Huebner, R.; Baehtz, C.; Skorupa, I.; Wang, Yutian; Skorupa, W.; Helm, M.; Zhou, Shengqiang

2014-07-01

The tunable bandgap and the high carrier mobility of Ge1-xSnx alloys stimulate a large effort for bandgap and strain engineering for Ge based materials using silicon compatible technology. In this Letter, we present the fabrication of highly mismatched Ge1-xSnx alloys by ion implantation and pulsed laser melting with Sn concentration ranging from 0.5 at. % up to 1.5 at. %. According to the structural investigations, the formed Ge1-xSnx alloys are monocrystalline with high Sn-incorporation rate. The shrinkage of the bandgap of Ge1-xSnx alloys with increasing Sn content is proven by the red-shift of the E1 and E1 + Δ1 critical points in spectroscopic ellipsometry. Our investigation provides a chip technology compatible route to prepare high quality monocrystalline Ge1-xSnx alloys.

Can Tauc plot extrapolation be used for direct-band-gap semiconductor nanocrystals?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Y., E-mail: yu.feng@unsw.edu.au; Lin, S.; Huang, S.

Despite that Tauc plot extrapolation has been widely adopted for extracting bandgap energies of semiconductors, there is a lack of theoretical support for applying it to nanocrystals. In this paper, direct-allowed optical transitions in semiconductor nanocrystals have been formulated based on a purely theoretical approach. This result reveals a size-dependant transition of the power factor used in Tauc plot, increasing from one half used in the 3D bulk case to one in the 0D case. This size-dependant intermediate value of power factor allows a better extrapolation of measured absorption data. Being a material characterization technique, the generalized Tauc extrapolation givesmore » a more reasonable and accurate acquisition of the intrinsic bandgap, while the unjustified purpose of extrapolating any elevated bandgap caused by quantum confinement is shown to be incorrect.« less

Near-band-edge optical responses of solution-processed organic-inorganic hybrid perovskite CH3NH3PbI3 on mesoporous TiO2 electrodes

NASA Astrophysics Data System (ADS)

Yamada, Yasuhiro; Nakamura, Toru; Endo, Masaru; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

2014-03-01

We studied the near-band-edge optical responses of solution-processed CH3NH3PbI3 on mesoporous TiO2 electrodes, which is utilized in mesoscopic heterojunction solar cells. Photoluminescence (PL) and PL excitation spectra peaks appear at 1.60 and 1.64 eV, respectively. The transient absorption spectrum shows a negative peak at 1.61 eV owing to photobleaching at the band-gap energy, indicating a direct band-gap semiconductor. On the basis of the temperature-dependent PL and diffuse reflectance spectra, we clarified that the absorption tail at room temperature is explained in terms of an Urbach tail and consistently determined the band-gap energy to be ˜1.61 eV at room temperature.

Polarization-maintaining fiber pulse compressor by birefringent hollow-core photonic bandgap fiber

NASA Astrophysics Data System (ADS)

Shirakawa, Akira; Tanisho, Motoyuki; Ueda, Ken-Ichi

2006-12-01

Structural birefringent properties of a hollow-core photonic-bandgap fiber were carefully investigated and applied to all-fiber chirped-pulse amplification as a compressor. The group birefringence of as high as 6.9×10-4 and the dispersion splitting by as large as 149 ps/nm/km between the two principal polarization modes were observed at 1557 nm. By launching the amplifier output to one of the polarization modes a 17-dB polarization extinction ratio was obtained without any pulse degradation originating from polarization-mode dispersion. A hybrid fiber stretcher effectively compensates the peculiar dispersion of the photonic-bandgap fiber and pedestal-free 440-fs pulses with a 1-W average power and 21-nJ pulse energy were obtained. Polarization-maintaining fiber-pigtail output of high-power femtosecond pulses is useful for various applications.

Tests of commercial colour CMOS cameras for astronomical applications

NASA Astrophysics Data System (ADS)

Pokhvala, S. M.; Reshetnyk, V. M.; Zhilyaev, B. E.

2013-12-01

We present some results of testing commercial colour CMOS cameras for astronomical applications. Colour CMOS sensors allow to perform photometry in three filters simultaneously that gives a great advantage compared with monochrome CCD detectors. The Bayer BGR colour system realized in colour CMOS sensors is close to the astronomical Johnson BVR system. The basic camera characteristics: read noise (e^{-}/pix), thermal noise (e^{-}/pix/sec) and electronic gain (e^{-}/ADU) for the commercial digital camera Canon 5D MarkIII are presented. We give the same characteristics for the scientific high performance cooled CCD camera system ALTA E47. Comparing results for tests of Canon 5D MarkIII and CCD ALTA E47 show that present-day commercial colour CMOS cameras can seriously compete with the scientific CCD cameras in deep astronomical imaging.

The mechanical design of spider silks: from fibroin sequence to mechanical function.

PubMed

Gosline, J M; Guerette, P A; Ortlepp, C S; Savage, K N

1999-12-01

Spiders produce a variety of silks, and the cloning of genes for silk fibroins reveals a clear link between protein sequence and structure-property relationships. The fibroins produced in the spider's major ampullate (MA) gland, which forms the dragline and web frame, contain multiple repeats of motifs that include an 8-10 residue long poly-alanine block and a 24-35 residue long glycine-rich block. When fibroins are spun into fibres, the poly-alanine blocks form (&bgr;)-sheet crystals that crosslink the fibroins into a polymer network with great stiffness, strength and toughness. As illustrated by a comparison of MA silks from Araneus diadematus and Nephila clavipes, variation in fibroin sequence and properties between spider species provides the opportunity to investigate the design of these remarkable biomaterials.

Non-Optical Applications of Photonic Crystal Structures

DTIC Science & Technology

2005-02-23

antenna created by covering a metallic ground plane with a periodic band-gap structure. By incorporating varactor diodes into the structure, they have...defects can be created in alumina band-gap materials by use of laser machining. (a) 1ncalizcd A 1II Cavity Fig 10 - (a) Schematics of propagation of...The primary applications are in dentistry and dermatology . The scale length of Terahertz devices simplifies the problems of fabrication and

Simulation Analysis of a Strip Dipole Excited Electromagnetic Band-Gap (EBG) Structure

DTIC Science & Technology

2015-07-01

unlimited. 13. SUPPLEMENTARY NOTES 14. ABSTRACT The design of an Electromagnetic Band-Gap (EBG) for a particular antenna application is...summarized. Discussion is provided on interpretation of the EBG reflection coefficient phase for antenna applications and on the range of the EBG bandwidth...It is determined for antenna applications that the reflection phase and current design methods may be misleading. Instead, it is opinioned and shown

Liquid crystal photonic bandgap fiber components

NASA Astrophysics Data System (ADS)

Scolari, L.; Alkeskjold, T. T.; Noordegraaf, D.; Tartarini, G.; Bassi, P.; Bjarklev, A.

2007-11-01

Liquid crystal photonic bandgap fibers represent a promising platform for the design of all-in-fiber optical devices, which show a high degree of tunability and exhibit novel optical properties for the manipulation of guided light. In this review paper we present tunable fiber devices for spectral filtering, such as Gaussian filters and notch filters, and devices for polarization control and analysis, such as birefringence control devices and switchable and rotatable polarizers.

Nonlinear Optical Interactions in Semiconductors

DTIC Science & Technology

1984-10-01

TACAN Aerospace Corporation. 6 V. Coupling A. C.N.R.S., Physique du Solide et Energie Solaire We have an on-going interaction with Dr. Christian...optical fiber to the semiconductor sample and back to the analyzing electronics. The band-gap energy of the semiconductor decreases with increasing...temperature. Consequently, the absorption of light in the energy region of the band-gap changes with temperature. From the measured light absorption, the

Analysis of multifunctional piezoelectric metastructures for low-frequency bandgap formation and energy harvesting

NASA Astrophysics Data System (ADS)

Sugino, C.; Erturk, A.

2018-05-01

Vibration-based energy harvesting is a growing field for generating low-power electricity to use in wireless electronic devices, such as the sensor networks used in structural health monitoring applications. Locally resonant metastructures, which are structures that comprise locally resonant metamaterial components, enable bandgap formation at wavelengths much longer than the lattice size, for critical applications such as low-frequency vibration attenuation in flexible structures. This work aims to bridge the domains of energy harvesting and locally resonant metamaterials to form multifunctional structures that exhibit both low-power electricity generation and vibration attenuation capabilities. A fully coupled electromechanical modeling framework is developed for two characteristic systems and their modal analysis is presented. Simulations are performed to explore the vibration and electrical power frequency response maps for varying electrical load resistance, and optimal loading conditions are presented. Case studies are presented to understand the interaction of bandgap formation and energy harvesting capabilities of this new class of multifunctional energy-harvesting locally resonant metastructures. It is shown that useful energy can be harvested from locally resonant metastructures without significantly diminishing their dramatic vibration attenuation in the locally resonant bandgap. Thus, integrating energy harvesters into a locally resonant metastructure enables a new potential for multifunctional locally resonant metastructures that can host self-powered sensors.

Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices

PubMed Central

Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

2016-01-01

Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (<20 mT); however, a very large decay was observed at a high magnetic field strength (>20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices. PMID:27142285

Energy transfer and visible-infrared quantum cutting photoluminescence modification in Tm-Yb codoped YPO(4) inverse opal photonic crystals.

PubMed

Wang, Siqin; Qiu, Jianbei; Wang, Qi; Zhou, Dacheng; Yang, Zhengwen

2015-08-01

YPO₄:  Tm, Yb inverse opal photonic crystals were successfully synthesized by the colloidal crystal templates method, and the visible-infrared quantum cutting (QC) photoluminescence properties of YPO₄:  Tm, Yb inverse opal photonic crystals were investigated. We obtained tetragonal phase YPO₄ in all the samples when the samples sintered at 950°C for 5 h. The visible emission intensity of Tm³⁺ decreased significantly when the photonic bandgap was located at 650 nm under 480 nm excitation. On the contrary, the QC emission intensity of Yb³⁺ was enhanced as compared with the no photonic bandgap sample. When the photonic bandgap was located at 480 nm, the Yb³⁺ and Tm³⁺ light-emitting intensity weakened at the same time. We demonstrated that the energy transfer between Tm³⁺ and Yb³⁺ is enhanced by the suppression of the red emission of Tm³⁺. Additionally, the mechanisms for the influence of the photonic bandgap on the energy transfer process of the Tm³⁺, Yb³⁺ codoped YPO₄ inverse opal are discussed.

Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions.

PubMed

Tang, Janika; Thakore, Vaibhav; Ala-Nissila, Tapio

2017-07-18

Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperatures in the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.

A Direct Bandgap Copper-Antimony Halide Perovskite.

PubMed

Vargas, Brenda; Ramos, Estrella; Pérez-Gutiérrez, Enrique; Alonso, Juan Carlos; Solis-Ibarra, Diego

2017-07-12

Since the establishment of perovskite solar cells (PSCs), there has been an intense search for alternative materials to replace lead and improve their stability toward moisture and light. As single-metal perovskite structures have yielded unsatisfactory performances, an alternative is the use of double perovskites that incorporate a combination of metals. To this day, only a handful of these compounds have been synthesized, but most of them have indirect bandgaps and/or do not have bandgaps energies well-suited for photovoltaic applications. Here we report the synthesis and characterization of a unique mixed metal ⟨111⟩-oriented layered perovskite, Cs 4 CuSb 2 Cl 12 (1), that incorporates Cu 2+ and Sb 3+ into layers that are three octahedra thick (n = 3). In addition to being made of abundant and nontoxic elements, we show that this material behaves as a semiconductor with a direct bandgap of 1.0 eV and its conductivity is 1 order of magnitude greater than that of MAPbI 3 (MA = methylammonium). Furthermore, 1 has high photo- and thermal-stability and is tolerant to humidity. We conclude that 1 is a promising material for photovoltaic applications and represents a new type of layered perovskite structure that incorporates metals in 2+ and 3+ oxidation states, thus significantly widening the possible combinations of metals to replace lead in PSCs.

Electronic properties of Cr-N codoped rutile TiO2(110) thin films

NASA Astrophysics Data System (ADS)

Cheng, Zhengwang; Zhang, Lili; Dong, Shihui; Ma, Xiaochuan; Ju, Huanxin; Zhu, Junfa; Cui, Xuefeng; Zhao, Jin; Wang, Bing

2017-12-01

We report our investigation on the electronic properties of Cr-N codoped rutile TiO2(110) single crystal thin films, homoepitaxially grown by pulsed-laser-deposition method, and characterized using scanning tunneling microscopy and spectroscopy (STM/STS), X-ray/ultraviolet photoemission spectroscopy (XPS/UPS), in combination with first-principles calculations. Our results show that the bandgap reduction of the TiO2(110) surface is mainly contributed by the delocalized states whose position is at 2.0 eV below the Fermi level, introduced by the substitutional codoped Cr-2N pair, which is evidenced by the accordance of the results between the STS spectra and the calculated DOS. The codoped Cr-N pair contributes the gap state at about 0.8 eV below the Fermi level, in consistent with the theoretical calculations. While, the monodoped Cr contributes the states either close to the valence band maximum or the conduction band minimum, which should not contribute to the bandgap reduction too much. Our experimental results joint with theoretical calculations provide an atomic view of the bandgap reduction of the rutile TiO2(110) surface, which indicates that the excess substitutional N atoms should be important to efficiently narrow the bandgap by introducing the Cr-2N pairs.

Stabilized wide bandgap perovskite solar cells by tin substitution

DOE PAGES

Yang, Zhibin; Rajagopal, Adharsh; Jo, Sae Byeok; ...

2016-11-16

Wide bandgap MAPb(I 1-yBr y) 3 perovskites show promising potential for application in tandem solar cells. However, unstable photovoltaic performance caused by phase segregation has been observed under illumination when y is above 0.2. Herein, we successfully demonstrate stabilization of the I/Br phase by partially replacing Pb 2+ with Sn 2+ and verify this stabilization with X-ray diffractometry and transient absorption spectroscopy. The resulting MAPb 0.75Sn 0.25(I 1-yBr y) 3 perovskite solar cells show stable photovoltaic performance under continuous illumination. Among these cells, the one based on MAPb 0.75Sn 0.25(I 0.4Br 0.6) 3 perovskite shows the highest efficiency of 12.59%more » with a bandgap of 1.73 eV, which make it a promising wide bandgap candidate for application in tandem solar cells. The engineering of internal bonding environment by partial Sn substitution is believed to be the main reason for making MAPb 0.75Sn 0.25(I 1-yBr y) 3 perovskite less vulnerable to phase segregation during the photostriction under illumination. Furthermore, this study establishes composition engineering of the metal site as a promising strategy to impart phase stability in hybrid perovskites under illumination.« less

Structure and Optical Bandgap Relationship of π-Conjugated Systems

PubMed Central

Botelho, André Leitão; Shin, Yongwoo; Liu, Jiakai; Lin, Xi

2014-01-01

In bulk heterojunction photovoltaic systems both the open-circuit voltage as well as the short-circuit current, and hence the power conversion efficiency, are dependent on the optical bandgap of the electron-donor material. While first-principles methods are computationally intensive, simpler model Hamiltonian approaches typically suffer from one or more flaws: inability to optimize the geometries for their own input; absence of general, transferable parameters; and poor performance for non-planar systems. We introduce a set of new and revised parameters for the adapted Su-Schrieffer-Heeger (aSSH) Hamiltonian, which is capable of optimizing geometries, along with rules for applying them to any -conjugated system containing C, N, O, or S, including non-planar systems. The predicted optical bandgaps show excellent agreement to UV-vis spectroscopy data points from literature, with a coefficient of determination , a mean error of −0.05 eV, and a mean absolute deviation of 0.16 eV. We use the model to gain insights from PEDOT, fused thiophene polymers, poly-isothianaphthene, copolymers, and pentacene as sources of design rules in the search for low bandgap materials. Using the model as an in-silico design tool, a copolymer of benzodithiophenes along with a small-molecule derivative of pentacene are proposed as optimal donor materials for organic photovoltaics. PMID:24497944

Wave propagation in relaxed micromorphic continua: modeling metamaterials with frequency band-gaps

NASA Astrophysics Data System (ADS)

Madeo, A.; Neff, P.; Ghiba, I. D.; Placidi, L.; Rosi, G.

2015-09-01

In this paper, the relaxed micromorphic model proposed in Ghiba et al. (Math Mech Solids, 2013), Neff et al. (Contin Mech Thermodyn, 2013) has been used to study wave propagation in unbounded continua with microstructure. By studying dispersion relations for the considered relaxed medium, we are able to disclose precise frequency ranges (band-gaps) for which propagation of waves cannot occur. These dispersion relations are strongly nonlinear so giving rise to a macroscopic dispersive behavior of the considered medium. We prove that the presence of band-gaps is related to a unique elastic coefficient, the so-called Cosserat couple modulus μ c , which is also responsible for the loss of symmetry of the Cauchy force stress tensor. This parameter can be seen as the trigger of a bifurcation phenomenon since the fact of slightly changing its value around a given threshold drastically changes the observed response of the material with respect to wave propagation. We finally show that band-gaps cannot be accounted for by classical micromorphic models as well as by Cosserat and second gradient ones. The potential fields of application of the proposed relaxed model are manifold, above all for what concerns the conception of new engineering materials to be used for vibration control and stealth technology.

Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator.

PubMed

Zhang, Shengli; Zhou, Wenhan; Ma, Yandong; Ji, Jianping; Cai, Bo; Yang, Shengyuan A; Zhu, Zhen; Chen, Zhongfang; Zeng, Haibo

2017-06-14

Highly stable antimonene, as the cousin of phosphorene from group-VA, has opened up exciting realms in the two-dimensional (2D) materials family. However, pristine antimonene is an indirect band gap semiconductor, which greatly restricts its applications for optoelectronics devices. Identifying suitable materials, both responsive to incident photons and efficient for carrier transfer, is urgently needed for ultrathin devices. Herein, by means of first-principles computations we found that it is rather feasible to realize a new class of 2D materials with a direct bandgap and high carrier mobility, namely antimonene oxides with different content of oxygen. Moreover, these tunable direct bandgaps cover a wide range from 0 to 2.28 eV, which are crucial for solar cell and photodetector applications. Especially, the antimonene oxide (18Sb-18O) is a 2D topological insulator with a sizable global bandgap of 177 meV, which has a nontrivial Z 2 topological invariant in the bulk and the topological states on the edge. Our findings not only introduce new vitality into 2D group-VA materials family and enrich available candidate materials in this field but also highlight the potential of these 2D semiconductors as appealing ultrathin materials for future flexible electronics and optoelectronics devices.

Synergistic plasmonic and photonic crystal light-trapping: architectures for optical up-conversion in thin-film solar cells.

PubMed

Le, Khai Q; John, Sajeev

2014-01-13

We demonstrate, numerically, that with a 60 nanometer layer of optical up-conversion material, embedded with plasmonic core-shell nano-rings and placed below a sub-micron silicon conical-pore photonic crystal it is possible to absorb sunlight well above the Lambertian limit in the 300-1100 nm range. With as little as 500 nm, equivalent bulk thickness of silicon, the maximum achievable photo-current density (MAPD) is about 36 mA/cm2, using above-bandgap sunlight. This MAPD increases to about 38 mA/cm2 for one micron of silicon. Our architecture also provides solar intensity enhancement by a factor of at least 1400 at the sub-bandgap wavelength of 1500 nm, due to plasmonic and photonic crystal resonances, enabling a further boost of photo-current density from up-conversion of sub-bandgap sunlight. With an external solar concentrator, providing 100 suns, light intensities sufficient for significant nonlinear up-conversion can be realized. Two-photon absorption of sub-bandgap sunlight is further enhanced by the large electromagnetic density of states in the photonic crystal at the re-emission wavelength near 750 nm. It is suggested that this synergy of plasmonic and photonic crystal resonances can lead to unprecedented power conversion efficiency in ultra-thin-film silicon solar cells.

First-principles evaluation of electronic and optical properties of (Mo, C) codoped BaHfO3 for applications in photocatalysis

NASA Astrophysics Data System (ADS)

Akhtar, Shaheen; Alay-e-Abbas, Syed Muhammad; Abbas, Syed Muhammad Ghulam; Arshad, Muhammad Imran; Batool, Javaria; Amin, Nasir

2018-04-01

In this paper, we report first-principles spin-polarized density functional theory calculations for exploring the effect of aliovalent Mo and C dopants on the electronic properties and photocatalysis potential of doped modifications of wide-bandgap cubic perovskite oxide BaHfO3 for water splitting. The structural and thermodynamic properties are computed by using the generalized gradient approximation, whereas the modified Becke-Johnson local density approximation is used to calculate the electronic structures of pristine, cation (Mo), and anion (C) monodoped and cation-anion (Mo, C) codoped BaHfO3. The spin-polarized calculations reveal that substitutional dopants CO and MoHf in the BaHfO3 lattice are thermodynamically stable. The incorporation of C in the O site reduces the bandgap of BaHfO3 and acts as a double-acceptor system, whereas a metallic character is obtained when Mo is doped into the Hf site giving rise to a double-donor system. We show that the acceptor and donor states of the C- and Mo-monodoped BaHfO3 can be passivated by (Mo, C) codoping at nearest-neighbor Hf and O sites of the BaHfO3 lattice, respectively. Analysis of the calculated electronic structure and optical absorption of (Mo, C) codoped BaHfO3 with reference to the H2O oxidation and reduction potentials reveals that this system is a suitable candidate for efficient splitting of water through photocatalysis in the visible region of the electromagnetic spectrum.

Thermophotovoltaic energy conversion using photonic bandgap selective emitters

DOEpatents

Gee, James M.; Lin, Shawn-Yu; Fleming, James G.; Moreno, James B.

2003-06-24

A method for thermophotovoltaic generation of electricity comprises heating a metallic photonic crystal to provide selective emission of radiation that is matched to the peak spectral response of a photovoltaic cell that converts the radiation to electricity. The use of a refractory metal, such as tungsten, for the photonic crystal enables high temperature operation for high radiant flux and high dielectric contrast for a full 3D photonic bandgap, preferable for efficient thermophotovoltaic energy conversion.

Direct Bandgap Group IV Materials

DTIC Science & Technology

2016-01-21

devices. In this project, we have accomplished (a) direct bandgap group IV materials of GeSn, (b) GeSn-based planar light - emitting diode operated at near...devices of planar light emitting diode , detector and laser ” 6/12/2015 PI and Co-PI information: - Name of Principal Investigators: Prof. H. H. Cheng...IV materials of GeSn, (b) GeSn-based planar light - emitting diode operated at near infrared with direct emission, and (c) the first planar

Photoinduced local heating in silica photonic crystals for fast and reversible switching.

PubMed

Gallego-Gómez, Francisco; Blanco, Alvaro; López, Cefe

2012-12-04

Fast and reversible photonic-bandgap tunability is achieved in silica artificial opals by local heating. The effect is fully reversible as heat rapidly dissipates through the non-irradiated structure without active cooling and water is readsorbed. The performance is strongly enhanced by decreasing the photoirradiated opal volume, allowing bandgap shifts of 12 nm and response times of 20 ms. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polarizing Ytterbium-Doped all-Solid Photonic Bandgap Fiber with 1150 micrometers2 Effective Mode Area

DTIC Science & Technology

2015-02-11

RESPONSIBLE PERSON 19b. TELEPHONE NUMBER Liang Dong Fanting Kong,, Guancheng Gu,, Thomas W. Hawkins ,, Joshua Parsons, Maxwell Jones,, Christopher...Dunn,, Monica T. Kalichevsky-Dong,, Benjamin Pulford,, Iyad Dajani,, Kunimasa Saitoh,, Stephen P. Palese,, Eric Cheung,, Liang Dong c. THIS PAGE The...ytterbium-doped all-solid photonic bandgap fiber with ~1150µm2 effective mode area Fanting Kong,1,* Guancheng Gu,1 Thomas W. Hawkins ,1 Joshua Parsons

High voltage series connected tandem junction solar battery

DOEpatents

Hanak, Joseph J.

1982-01-01

A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

PubMed

Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

2014-12-21

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

Four-terminal circuit element with photonic core

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sampayan, Stephen

A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated basedmore » on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.« less

Sub-5 nm, globally aligned graphene nanoribbons on Ge(001)

DOE PAGES

Kiraly, Brian; Mannix, Andrew J.; Jacobberger, Robert M.; ...

2016-05-23

Graphene nanoribbons (GNRs) hold great promise for future electronics because of their edge and width dependent electronic bandgaps and exceptional transport properties. While significant progress toward such devices has been made, the field has been limited by difficulties achieving narrow widths, global alignment, and atomically pristine GNR edges on technologically relevant substrates. A recent advance has challenged these limits by using Ge(001) substrates to direct the bottom-up growth of GNRs with nearly pristine armchair edges and widths near ~10 nm via atmospheric pressure chemical vapor deposition. In this work, we extend the growth of GNRs on Ge(001) to ultra-high vacuummore » conditions and realize GNRs narrower than 5 nm. Armchair graphene nanoribbons directed along the Ge <110> surface directions are achieved with excellent width control and relatively large bandgaps. As a result, the bandgap magnitude and electronic uniformity make these new materials excellent candidates for future developments in nanoelectronics.« less

Type-II InP quantum dots in wide-bandgap InGaP host for intermediate-band solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tayagaki, Takeshi, E-mail: tayagaki-t@aist.go.jp; Sugaya, Takeyoshi

2016-04-11

We demonstrate type-II quantum dots (QDs) with long carrier lifetimes in a wide-bandgap host as a promising candidate for intermediate-band solar cells. Type-II InP QDs are fabricated in a wide-bandgap InGaP host using molecular beam epitaxy. Time-resolved photoluminescence measurements reveal an extremely long carrier lifetime (i.e., greater than 30 ns). In addition, from temperature-dependent PL spectra, we find that the type-II InP QDs form a negligible valence band offset and conduction band offset of ΔE{sub c} ≈ 0.35 eV in the InGaP host. Such a type-II confinement potential for InP/InGaP QDs has a significant advantage for realizing efficient two-step photon absorption and suppressed carriermore » capture in QDs via Auger relaxation.« less

Research on System Coherence Evolution of Different Environmental Models

NASA Astrophysics Data System (ADS)

Zhang, Si-Qi; Lu, Jing-Bin; Li, Hong; Liu, Ji-Ping; Zhang, Xiao-Ru; Liu, Han; Liang, Yu; Ma, Ji; Liu, Xiao-Jing; Wu, Xiang-Yao

2018-04-01

In this paper, we have studied the evolution curve of two-level atomic system that the initial state is excited state. At the different of environmental reservoir models, which include the single Lorentzian, ideal photon band-gap, double Lorentzian and square Lorentzian reservoir, we researched the influence of these environmental reservoir models on the evolution of energy level population. At static no modulation, comparing the four environmental models, the atomic energy level population oscillation of square Lorentzian reservoir model is fastest, and the atomic system decoherence is slowest. Under dynamic modulation, comparing the photon band-gap model with the single Lorentzian reservoir model, no matter what form of dynamic modulation, the time of atoms decay to the ground state is longer for the photonic band-gap model. These conclusions make the idea of using the environmental change to modulate the coherent evolution of atomic system become true.

Recent progress in GeSn growth and GeSn-based photonic devices

NASA Astrophysics Data System (ADS)

Zheng, Jun; Liu, Zhi; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

2018-06-01

The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content exceeds 6%. It shows great potential for laser use in optoelectronic integration circuits (OEIC) on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photodetectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the monolithic integration of Si photonic circuits by the complementary metal–oxide–semiconductor (CMOS) technology. Project supported by the Beijing Natural Science Foundation (No. 4162063) and the Youth Innovation Promotion Association of CAS (No. 2015091).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.

Compared with their bulk counterparts, 2D materials can sustain much higher elastic strain at which optical quantities such as bandgaps and absorption spectra governing optoelectronic device performance can be modified with relative ease. Using first-principles density functional theory and quasiparticle GW calculations, we demonstrate how uniaxial tensile strain can be utilized to optimize the electronic and optical properties of transition metal dichalcogenide lateral (in-plane) heterostructures such as MoX 2/WX 2 (X = S, Se, Te). We find that these lateral-type heterostructures may facilitate efficient electron–hole separation for light detection/harvesting and preserve their type II characteristic up to 12% of uniaxialmore » strain. Based on the strain-dependent bandgap and band offset, we show that uniaxial tensile strain can significantly increase the power conversion efficiency of these lateral heterostructures. Our results suggest that these strain-engineered lateral heterostructures are promising for optimizing optoelectronic device performance by selectively tuning the energetics of the bandgap.« less

Prediction on electronic structure of CH3NH3PbI3/Fe3O4 interfaces

NASA Astrophysics Data System (ADS)

Hou, Xueyao; Wang, Xiaocha; Mi, Wenbo; Du, Zunfeng

2018-01-01

The interfacial electronic structures of CH3NH3PbI3(MAPbI3)/Fe3O4 heterostructures are predicted by density functional theory. Four models (MAI/FeBO, PbI2/FeBO, MAI/FeA and PbI2/FeA) are included. Especially, a half-metal to semiconductor transition of Fe3O4 appears in PbI2/FeA model. A series of electric field is added to PbI2/FeA model, and a direct-indirect bandgap transition of Fe3O4 appears at a 500-kV/cm field. The electric field can control the bandgap of Fe3O4 in PbI2/FeA model by modulating the hybridization. The prediction of spin-related bandgap characteristic in MAPbI3/Fe3O4 is meaningful for further study.

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

1990-01-01

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

III-V arsenide-nitride semiconductor

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

2000-01-01

III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Methods for forming group III-arsenide-nitride semiconductor materials

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

2002-01-01

Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Methods for forming group III-V arsenide-nitride semiconductor materials

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

2000-01-01

Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

NASA Technical Reports Server (NTRS)

Triplett, G. E., Jr.; Durbin, S. M.

2004-01-01

The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

Simultaneous band-gap narrowing and carrier-lifetime prolongation of organic–inorganic trihalide perovskites

PubMed Central

Kong, Lingping; Liu, Gang; Gong, Jue; Hu, Qingyang; Schaller, Richard D.; Dera, Przemyslaw; Zhang, Dongzhou; Liu, Zhenxian; Yang, Wenge; Zhu, Kai; Tang, Yuzhao; Wang, Chuanyi; Wei, Su-Huai; Xu, Tao; Mao, Ho-kwang

2016-01-01

The organic–inorganic hybrid lead trihalide perovskites have been emerging as the most attractive photovoltaic materials. As regulated by Shockley–Queisser theory, a formidable materials science challenge for improvement to the next level requires further band-gap narrowing for broader absorption in solar spectrum, while retaining or even synergistically prolonging the carrier lifetime, a critical factor responsible for attaining the near-band-gap photovoltage. Herein, by applying controllable hydrostatic pressure, we have achieved unprecedented simultaneous enhancement in both band-gap narrowing and carrier-lifetime prolongation (up to 70% to ∼100% increase) under mild pressures at ∼0.3 GPa. The pressure-induced modulation on pure hybrid perovskites without introducing any adverse chemical or thermal effect clearly demonstrates the importance of band edges on the photon–electron interaction and maps a pioneering route toward a further increase in their photovoltaic performance. PMID:27444014

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

DOE PAGES

Li, D. L.; Ma, Q. L.; Wang, S. G.; ...

2014-12-02

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. In this paper, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δmore » 1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. Finally, in this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.« less

Lead-Free, Two-Dimensional Mixed Germanium and Tin Perovskites.

PubMed

Cheng, Pengfei; Wu, Tao; Liu, Junxue; Deng, Wei-Qiao; Han, Keli

2018-05-17

Hybrid two-dimensional (2D) organic-inorganic perovskites continue to draw increased attention in view of their outstanding performance in optoelectronic devices such as solar cells and light-emitting devices. Herein, for the first time, we report the synthesis and characterization of lead-free, 2D mixed Ge-Sn halide perovskites, (PEA) 2 Ge 1- x Sn x I 4 (where PEA = C 6 H 5 CH 2 CH 2 NH 3 + ), and demonstrate that the bandgaps decrease linearly with increasing Sn content. Most importantly, among them, (PEA) 2 Ge 0.5 Sn 0.5 I 4 possesses the smallest bandgap of 1.95 eV. Density functional theory calculations confirm that Sn substitution induces a smaller bandgap and more dispersed band structure, which are desirable characteristics of light-absorbing materials. In addition, conductivity and stability of (PEA) 2 Ge 0.5 Sn 0.5 I 4 have also been assessed.

Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire.

PubMed

Pan, Hui

2014-01-01

Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting.

Optical Spectra Tuning of All-Glass Photonic Bandgap Fiber Infiltrated with Silver Fast-Ion-Conducting Glasses.

PubMed

Konidakis, Ioannis; Pissadakis, Stavros

2014-08-07

Silver iodide metaphosphate glasses of the x AgI + (1- x )AgPO₃ family are embedded inside the air capillaries of a commercial silica photonic crystal fiber (PCF) by means of vacuum-assisted infiltration technique. In this paper, we report on tuning the photonic bandgap (PBG) guidance characteristics of the fabricated all-glass photonic bandgap fibers, by varying the composition of the fast-ion-conducting phosphate glass infiltration medium. Doping AgPO₃ metaphosphate glass with AgI significantly alters the PBG guidance patterns in the examined range between 350 and 1750 nm, as it leads to the introduction of numerous additional transmission stop-bands, while affecting scattering dependant losses. The effect of phosphate glass cooling method during sample fabrication on the transmission behavior of the x AgI + (1- x )AgPO₃/PCFs is also considered.

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

PubMed Central

Li, D. L.; Ma, Q. L.; Wang, S. G.; Ward, R. C. C.; Hesjedal, T.; Zhang, X.-G.; Kohn, A.; Amsellem, E.; Yang, G.; Liu, J. L.; Jiang, J.; Wei, H. X.; Han, X. F.

2014-01-01

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices. PMID:25451163

Exchange and correlation energies in silicene illuminated by circularly polarized light

NASA Astrophysics Data System (ADS)

Iurov, Andrii; Gumbs, Godfrey; Huang, Danhong

2017-05-01

Both the exchange and correlation energies due to Coulomb and spin-orbit interactions in a monolayer silicene with a buckled honeycomb lattice are calculated. We use Lindhard formalism for the polarizability. Many-body effects in such Dirac-like materials are studied with an emphasis on the influence of on-site potential difference ? between two sublattices. Our calculations have shown that the presence of an energy bandgap ? leads to a reduced exchange energy, which has some potential applications, such as, tunability of entanglement of electrons for quantum information devices. Since silicene acquires two energy gaps associated with up- and down-pseudospin, we can adjust its electronic properties in a wider range by varying these two bandgaps as compared to graphene. Another way to tune silicene electronic properties is through impurity doping. Our numerical results demonstrate the dependence of exchange and correlation energies on the energy bandgaps, doping and temperature under circularly polarized light.

Fabrication and characterization of an all-solid tellurite-phosphate photonic bandgap fiber.

PubMed

Cheng, Tonglei; Sakai, Yukiko; Suzuki, Takenobu; Ohishi, Yasutake

2015-05-01

We present an all-solid tellurite-phosphate photonic bandgap fiber (PBGF) with two layers of high-index rods (TeO2-Li2O-WO3-MoO3-Nb2O5, TLWMN) in the cladding (TeO2-ZnO-Li2O-K2O-Al2O3-P2O5, TZLKAP). TLWMN and TZLKAP glasses have good compatibility for fabricating the all-solid PBGF. Photonic bandgap (PBG) properties are calculated by the plane wave expansion method (PWM), and the results agree well with the measured transmission spectrum. Furthermore, the modal field patterns are measured at ∼1300 and 1520 nm, respectively. The light is confined to the core at ∼1300  nm and lost in the cladding at ∼1520  nm, which match well with the calculated modal field intensities.

Mechanical low-frequency filter via modes separation in 3D periodic structures

NASA Astrophysics Data System (ADS)

D'Alessandro, L.; Belloni, E.; Ardito, R.; Braghin, F.; Corigliano, A.

2017-12-01

This work presents a strategy to design three-dimensional elastic periodic structures endowed with complete bandgaps, the first of which is ultra-wide, where the top limits of the first two bandgaps are overstepped in terms of wave transmission in the finite structure. Thus, subsequent bandgaps are merged, approaching the behaviour of a three-dimensional low-pass mechanical filter. This result relies on a proper organization of the modal characteristics, and it is validated by performing numerical and analytical calculations over the unit cell. A prototype of the analysed layout, made of Nylon by means of additive manufacturing, is experimentally tested to assess the transmission spectrum of the finite structure, obtaining good agreement with numerical predictions. The presented strategy paves the way for the development of a class of periodic structures to be used in robust and reliable wave attenuation over a wide frequency band.

Development of high-performance GaInAsP solar cells for tandem solar cell applications

NASA Technical Reports Server (NTRS)

Wanlass, M. W.; Ward, J. S.; Gessert, T. A.; Emery, K. A.; Horner, G. S.

1990-01-01

Recent results in the development of high-efficiency, low-bandgap GaInAsP solar cells epitaxially grown and lattice matched on InP substrates are presented. Such cells are intended to be used as optimum bottom cell components in tandem solar cells. Assuming that a GaAs-based top cell is used, computer simulation of the potential bottom cell performance as a function of the cell bandgap and incident spectrum indicates that two particular alloys are desirable: Ga0.47In0.53As (Eg = 0.75 eV) for space applications and Ga0.25In0.75As0.54P0.46 (Eg = 0.95 eV) for terrestrial applications. In each of these materials, solar cells with new record-level efficiencies have been fabricated. The efficiency boost available to tandem configurations from these low-bandgap cells is discussed.

Reducing support loss in micromechanical ring resonators using phononic band-gap structures

NASA Astrophysics Data System (ADS)

Hsu, Feng-Chia; Hsu, Jin-Chen; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin

2011-09-01

In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.

Experimental observation of wave localization at the Dirac frequency in a two-dimensional photonic crystal microcavity.

PubMed

Hu, Lei; Xie, Kang; Hu, Zhijia; Mao, Qiuping; Xia, Jiangying; Jiang, Haiming; Zhang, Junxi; Wen, Jianxiang; Chen, Jingjing

2018-04-02

Trapping light within cavities or waveguides in photonic crystals is an effective technology in modern integrated optics. Traditionally, cavities rely on total internal reflection or a photonic bandgap to achieve field confinement. Recent investigations have examined new localized modes that occur at a Dirac frequency that is beyond any complete photonic bandgap. We design Al 2 O 3 dielectric cylinders placed on a triangular lattice in air, and change the central rod size to form a photonic crystal microcavity. It is predicted that waves can be localized at the Dirac frequency in this device without photonic bandgaps or total internal reflections. We perform a theoretical analysis of this new wave localization and verify it experimentally. This work paves the way for exploring localized defect modes at the Dirac point in the visible and infrared bands, with potential applicability to new optical devices.

GW quasiparticle bandgaps of anatase TiO2 starting from DFT + U.

PubMed

Patrick, Christopher E; Giustino, Feliciano

2012-05-23

We investigate the quasiparticle band structure of anatase TiO(2), a wide gap semiconductor widely employed in photovoltaics and photocatalysis. We obtain GW quasiparticle energies starting from density-functional theory (DFT) calculations including Hubbard U corrections. Using a simple iterative procedure we determine the value of the Hubbard parameter yielding a vanishing quasiparticle correction to the fundamental bandgap of anatase TiO(2). The bandgap (3.3 eV) calculated using this optimal Hubbard parameter is smaller than the value obtained by applying many-body perturbation theory to standard DFT eigenstates and eigenvalues (3.7 eV). We extend our analysis to the rutile polymorph of TiO(2) and reach similar conclusions. Our work highlights the role of the starting non-interacting Hamiltonian in the calculation of GW quasiparticle energies in TiO(2) and suggests an optimal Hubbard parameter for future calculations.

Electromagnetic interference reduction using electromagnetic bandgap structures in packages, enclosures, cavities, and antennas

NASA Astrophysics Data System (ADS)

Mohajer Iravani, Baharak

Electromagnetic interference (EMI) is a source of noise problems in electronic devices. The EMI is attributed to coupling between sources of radiation and components placed in the same media such as package or chassis. This coupling can be either through conducting currents or through radiation. The radiation of electromagnetic (EM) fields is supported by surface currents. Thus, minimizing these surface currents is considered a major and critical step to suppress EMI. In this work, we present novel strategies to confine surface currents in different applications including packages, enclosures, cavities, and antennas. The efficiency of present methods of EM noise suppression is limited due to different drawbacks. For example, the traditional use of lossy materials and absorbers suffers from considerable disadvantages including mechanical and thermal reliability leading to limited life time, cost, volume, and weight. In this work, we consider the use of Electromagnetic Band Gap (EBG) structures. These structures are suitable for suppressing surface currents within a frequency band denoted as the bandgap. Their design is straight forward, they are inexpensive to implement, and they do not suffer from the limitations of the previous methods. A new method of EM noise suppression in enclosures and cavity-backed antennas using mushroom-type EBG structures is introduced. The effectiveness of the EBG as an EMI suppresser is demonstrated using numerical simulations and experimental measurements. To allow integration of EBGs in printed circuit boards and packages, novel miniaturized simple planar EBG structures based on use of high-k dielectric material (epsilonr > 100) are proposed. The design consists of meander lines and patches. The inductive meander lines serve to provide current continuity bridges between the capacitive patches. The high-k dielectric material increases the effective capacitive load substantially in comparison to commonly used material with much lower dielectric constant. Meander lines can increase the effective inductive load which pushes down the lower edge of bandgap, thus resulting in a wider bandgap. Simulation results are included to show that the proposed EBG structures provide very wide bandgap (˜10GHz) covering the multiple harmonics of of currently available microprocessors and its harmonics. To speed up the design procedure, a model based on combination of lumped elements and transmission lines is proposed. The derived model predicts accurately the starting edge of bandgap. This result is verified with full-wave analysis. Finally, another novel compact wide band mushroom-type EBG structure using magneto-dielectric materials is designed. Numerical simulations show that the proposed EBG structure provides in-phase reflection bandgap which is several times greater than the one obtained from a conventional EBG operating at the same frequency while its cell size is smaller. This type of EBG structure can be used efficiently as a ground plane for low-profile wideband antennas.

Workplace-based assessment of communication skills: A pilot project addressing feasibility, acceptance and reliability

PubMed Central

Weyers, Simone; Jemi, Iman; Karger, André; Raski, Bianca; Rotthoff, Thomas; Pentzek, Michael; Mortsiefer, Achim

2016-01-01

Background: Imparting communication skills has been given great importance in medical curricula. In addition to standardized assessments, students should communicate with real patients in actual clinical situations during workplace-based assessments and receive structured feedback on their performance. The aim of this project was to pilot a formative testing method for workplace-based assessment. Our investigation centered in particular on whether or not physicians view the method as feasible and how high acceptance is among students. In addition, we assessed the reliability of the method. Method: As part of the project, 16 students held two consultations each with chronically ill patients at the medical practice where they were completing GP training. These consultations were video-recorded. The trained mentoring physician rated the student’s performance and provided feedback immediately following the consultations using the Berlin Global Rating scale (BGR). Two impartial, trained raters also evaluated the videos using BGR. For qualitative and quantitative analysis, information on how physicians and students viewed feasibility and their levels of acceptance was collected in written form in a partially standardized manner. To test for reliability, the test-retest reliability was calculated for both of the overall evaluations given by each rater. The inter-rater reliability was determined for the three evaluations of each individual consultation. Results: The formative assessment method was rated positively by both physicians and students. It is relatively easy to integrate into daily routines. Its significant value lies in the personal, structured and recurring feedback. The two overall scores for each patient consultation given by the two impartial raters correlate moderately. The degree of uniformity among the three raters in respect to the individual consultations is low. Discussion: Within the scope of this pilot project, only a small sample of physicians and students could be surveyed to a limited extent. There are indications that the assessment can be improved by integrating more information on medical context and student self-assessments. Despite the current limitations regarding test criteria, it is clear that workplace-based assessment of communication skills in the clinical setting is a valuable addition to the communication curricula of medical schools. PMID:27990466

Workplace-based assessment of communication skills: A pilot project addressing feasibility, acceptance and reliability.

PubMed

Weyers, Simone; Jemi, Iman; Karger, André; Raski, Bianca; Rotthoff, Thomas; Pentzek, Michael; Mortsiefer, Achim

2016-01-01

Background: Imparting communication skills has been given great importance in medical curricula. In addition to standardized assessments, students should communicate with real patients in actual clinical situations during workplace-based assessments and receive structured feedback on their performance. The aim of this project was to pilot a formative testing method for workplace-based assessment. Our investigation centered in particular on whether or not physicians view the method as feasible and how high acceptance is among students. In addition, we assessed the reliability of the method. Method: As part of the project, 16 students held two consultations each with chronically ill patients at the medical practice where they were completing GP training. These consultations were video-recorded. The trained mentoring physician rated the student's performance and provided feedback immediately following the consultations using the Berlin Global Rating scale (BGR). Two impartial, trained raters also evaluated the videos using BGR. For qualitative and quantitative analysis, information on how physicians and students viewed feasibility and their levels of acceptance was collected in written form in a partially standardized manner. To test for reliability, the test-retest reliability was calculated for both of the overall evaluations given by each rater. The inter-rater reliability was determined for the three evaluations of each individual consultation. Results: The formative assessment method was rated positively by both physicians and students. It is relatively easy to integrate into daily routines. Its significant value lies in the personal, structured and recurring feedback. The two overall scores for each patient consultation given by the two impartial raters correlate moderately. The degree of uniformity among the three raters in respect to the individual consultations is low. Discussion: Within the scope of this pilot project, only a small sample of physicians and students could be surveyed to a limited extent. There are indications that the assessment can be improved by integrating more information on medical context and student self-assessments. Despite the current limitations regarding test criteria, it is clear that workplace-based assessment of communication skills in the clinical setting is a valuable addition to the communication curricula of medical schools.

Photocatalytic Coatings for Exploration and Spaceport Design

NASA Technical Reports Server (NTRS)

2008-01-01

This project developed self-cleaning photocatalytic coatings that remove contamination without human intervention. The coatings chemically remove organic contaminants and leave no residue. The photocatalyst will not negatively affect other coating properties, especially corrosion resistance. Titanium dioxide, TiO2, is an extremely popular photocatalyst because of its chemical stability, nontoxicity, and low cost. TiO2 is commonly used in the photocatalytic oxidation of organic matter or pollutants in the gas and liquid phases. However, TiO2 does have some drawbacks. It has limited light absorption because of its large band-gap and suffers from a photonic efficiency of less than 10 percent for organic degradation. Dopants can lower the band-gap and improve efficiency. Since the photocatalytically active form of TiO2 is a nanocrystalline powder, it can be difficult to make a robust coating with enough catalyst loading to be effective. Photocatalysts become active when certain light energy is absorbed. When photons with an energy greater than the band-gap, Eg, (wavelengths shorter than 400 nm) impinge upon the surface of the TiO2, an electron-hole pair is formed. The electron-hole pair oxidizes adsorbed substances either directly or via reactive intermediates that form on the surface, such as hydroxyl radicals (OH) or superoxide ions (O2-). Several factors can influence the band-gap energy of TiO2, two of which are crystal structure and impurities. TiO2 exists as three crystal structures brookite, anatase, and rutile that can be controlled via heat treatment. Anatase is the most photocatalytically active crystal form of TiO2. Doping TiO2 with impurities can alter its band-gap energy, as well as its effectiveness as a catalyst. Depending on their size, dopant atoms can occupy either the substitutional or interstitial lattice positions. Atoms that are relatively large will assume the interstitial positions and create a much greater energy disturbance in the crystal than will smaller atoms that take on the substitutional positions. This energy disturbance narrows the band-gap and thus allows photons with longer wavelengths and smaller energies (such as those in the visible-light spectrum) to create electron-hole pairs. Raman spectroscopy was performed for the purpose of determining the crystal structure and the degree of crystallinity of the TiO2 particles. Reflectance measurements indicated the wavelengths of light absorbed by the different catalysts.

Synthesis and luminescence of Mn-doped Cs2AgInCl6 double perovskites.

PubMed

K, Nila Nandha; Nag, Angshuman

2018-05-17

Metal halide double perovskites (DPs) are being explored as stable and non-toxic alternatives of Pb-halide perovskites. Typically DPs exhibit a wide (>2.5 eV) and/or indirect bandgap, limiting their applications in the visible region. Here we impart the visible-light emission property in direct bandgap Cs2AgInCl6 DPs by doping Mn2+ ions. Synthesis, characterization and luminescence of metal halide double perovskites are reported.

Wave propagation in axially moving periodic strings

NASA Astrophysics Data System (ADS)

Sorokin, Vladislav S.; Thomsen, Jon Juel

2017-04-01

The paper deals with analytically studying transverse waves propagation in an axially moving string with periodically modulated cross section. The structure effectively models various relevant technological systems, e.g. belts, thread lines, band saws, etc., and, in particular, roller chain drives for diesel engines by capturing both their spatial periodicity and axial motion. The Method of Varying Amplitudes is employed in the analysis. It is shown that the compound wave traveling in the axially moving periodic string comprises many components with different frequencies and wavenumbers. This is in contrast to non-moving periodic structures, for which all components of the corresponding compound wave feature the same frequency. Due to this "multi-frequency" character of the wave motion, the conventional notion of frequency band-gaps appears to be not applicable for the moving periodic strings. Thus, for such structures, by frequency band-gaps it is proposed to understand frequency ranges in which the primary component of the compound wave attenuates. Such frequency band-gaps can be present for a moving periodic string, but only if its axial velocity is lower than the transverse wave speed, and, the higher the axial velocity, the narrower the frequency band-gaps. The revealed effects could be of potential importance for applications, e.g. they indicate that due to spatial inhomogeneity, oscillations of axially moving periodic chains always involve a multitude of frequencies.

On the mechanism of bandgap formation in locally resonant finite elastic metamaterials

NASA Astrophysics Data System (ADS)

Sugino, Christopher; Leadenham, Stephen; Ruzzene, Massimo; Erturk, Alper

2016-10-01

Elastic/acoustic metamaterials made from locally resonant arrays can exhibit bandgaps at wavelengths much longer than the lattice size for various applications spanning from low-frequency vibration/sound attenuation to wave guiding and filtering in mechanical and electromechanical devices. For an effective use of such locally resonant metamaterial concepts in finite structures, it is required to bridge the gap between the lattice dispersion characteristics and modal behavior of the host structure with its resonators. To this end, we develop a novel argument for bandgap formation in finite-length elastic metamaterial beams, relying on the modal analysis and the assumption of infinitely many resonators. We show that the dual problem to wave propagation through an infinite periodic beam is the modal analysis of a finite beam with an infinite number of resonators. A simple formula that depends only on the resonator natural frequency and total mass ratio is derived for placing the bandgap in a desired frequency range, yielding an analytical insight and a rule of thumb for design purposes. A method for understanding the importance of a resonator location and mass is discussed in the context of a Riemann sum approximation of an integral, and a method for determining the optimal number of resonators for a given set of boundary conditions and target frequency is introduced. The simulations of the theoretical framework are validated by experiments for bending vibrations of a locally resonant cantilever beam.

Bandgap Engineering of Cu(In 1-xGax)Se 2 Absorber Layers Fabricated using CuInSe 2 and CuGaSe 2 Targets for One-Step Sputtering Process

DOE PAGES

Park, Jae -Cheol; Lee, Jeon -Ryang; Al-Jassim, Mowafak; ...

2016-10-17

Here we have demonstrated that the bandgap of Cu(In 1-xGa x)Se 2(CIGS) absorber layers was readily controlled by using a one-step sputtering process. CIGS thin-film sample libraries with different Ga/(In + Ga) ratios were synthesized on soda-lime glass at 550 °C using a combinatorial magnetron sputtering system employing CuInSe 2(CIS) and CuGaSe 2(CGS) targets. Energy-dispersive X-ray fluorescence spectrometry (EDS-XRF) confirmed that the CIGS films had different Ga/(In + Ga) ratios, which were varied by the sample configuration on the substrate and ranged from 0.2 to 0.9. X-ray diffraction and Raman spectroscopy revealed that the CIGS films had a pure chalcopyritemore » phase without any secondary phase such as Cu-Se or ordered vacancy compound (OVC), respectively. Furthermore, we found that the optical bandgap energies of the CIGS films determined by transmittance measurements ranged from 1.07 eV to 1.53 eV as the Ga/(In + Ga) ratio increased from 0.2 to 0.9, demonstrating that the one-step sputtering process using CIS and CGS targets is another simple route to control the bandgap energy of the CIGS absorber layer.« less

100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%

DOE PAGES

Sayed, Islam E. H.; Jain, Nikhil; Steiner, Myles A.; ...

2017-08-25

Here, InGaAsP/InGaP quantum well (QW) structures are promising materials for next generation photovoltaic devices because of their tunable bandgap (1.50-1.80 eV) and being aluminum-free. However, the strain-balance limitations have previously limited light absorption in the QW region and constrained the external quantum efficiency (EQE) values beyond the In 0.49Ga 0.51P band-edge to less than 25%. In this work, we show that implementing a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing InGaAsP well resulted in more than 2x improvement in EQE values than previously reported strain balanced approaches. In addition, processing the devices with amore » rear optical reflector resulted in strong Fabry-Perot resonance oscillations and the EQE values were highly improved in the vicinity of these peaks, resulting in a short circuit current improvement of 10% relative to devices with a rear optical filter. These enhancements have resulted in an InGaAsP/InGaP superlattice solar cell with improved peak sub-bandgap EQE values exceeding 75% at 700 nm, an improvement in the short circuit current of 26% relative to standard InGaP devices, and an enhanced bandgap-voltage offset (W oc) of 0.4 V.« less

Band-gap tunable dielectric elastomer filter for low frequency noise

NASA Astrophysics Data System (ADS)

Jia, Kun; Wang, Mian; Lu, Tongqing; Zhang, Jinhua; Wang, Tiejun

2016-05-01

In the last decades, diverse materials and technologies for sound insulation have been widely applied in engineering. However, suppressing the noise radiation at low frequency still remains a challenge. In this work, a novel membrane-type smart filter, consisting of a pre-stretched dielectric elastomer membrane with two compliant electrodes coated on the both sides, is presented to control the low frequency noise. Since the stiffness of membrane dominates its acoustic properties, sound transmission band-gap of the membrane filter can be tuned by adjusting the voltage applied to the membrane. The impedance tube experiments have been carried out to measure the sound transmission loss (STL) of the filters with different electrodes, membrane thickness and pre-stretch conditions. The experimental results show that the center frequency of sound transmission band-gap mainly depends on the stress in the dielectric elastomer, and a large band-gap shift (more than 60 Hz) can be achieved by tuning the voltage applied to the 85 mm diameter VHB4910 specimen with pre-stretch {λ }0=3. Based on the experimental results and the assumption that applied electric field is independent of the membrane behavior, 3D finite element analysis has also been conducted to calculate the membrane stress variation. The sound filter proposed herein may provide a promising facility to control low frequency noise source with tonal characteristics.

Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements

PubMed Central

Sánchez, Pascal; Lorenzo, Olaya; Menéndez, Armando; Menéndez, Jose Luis; Gomez, David; Pereiro, Rosario; Fernández, Beatriz

2011-01-01

The determination of optical parameters, such as absorption and extinction coefficients, refractive index and the bandgap energy, is crucial to understand the behavior and final efficiency of thin film solar cells based on hydrogenated amorphous silicon (a-Si:H). The influence of small variations of the gas flow rates used for the preparation of the p-a-SiC:H layer on the bandgap energy, as well as on the dopant elements concentration, thickness and conductivity of the p-layer, is investigated in this work using several complementary techniques. UV-NIR spectrophotometry and ellipsometry were used for the determination of bandgap energies of four p-a-SiC:H thin films, prepared by using different B2H6 and SiH4 fluxes (B2H6 from 12 sccm to 20 sccm and SiH4 from 6 sccm to 10 sccm). Moreover, radiofrequency glow discharge optical emission spectrometry technique was used for depth profiling characterization of p-a-SiC:H thin films and valuable information about dopant elements concentration and distribution throughout the coating was found. Finally, a direct relationship between the conductivity of p-a-SiC:H thin films and the dopant elements concentration, particularly boron and carbon, was observed for the four selected samples. PMID:21731436

V-doped SnS2: a new intermediate band material for a better use of the solar spectrum.

PubMed

Wahnón, Perla; Conesa, José C; Palacios, Pablo; Lucena, Raquel; Aguilera, Irene; Seminovski, Yohanna; Fresno, Fernando

2011-12-07

Intermediate band materials can boost photovoltaic efficiency through an increase in photocurrent without photovoltage degradation thanks to the use of two sub-bandgap photons to achieve a full electronic transition from the valence band to the conduction band of a semiconductor structure. After having reported in previous works several transition metal-substituted semiconductors as able to achieve the electronic structure needed for this scheme, we propose at present carrying out this substitution in sulfides that have bandgaps of around 2.0 eV and containing octahedrally coordinated cations such as In or Sn. Specifically, the electronic structure of layered SnS(2) with Sn partially substituted by vanadium is examined here with first principles quantum methods and seen to give favourable characteristics in this respect. The synthesis of this material in nanocrystalline powder form is then undertaken and achieved using solvothermal chemical methods. The insertion of vanadium in SnS(2) is found to produce an absorption spectrum in the UV-Vis-NIR range that displays a new sub-bandgap feature in agreement with the quantum calculations. A photocatalytic reaction-based test verifies that this sub-bandgap absorption produces highly mobile electrons and holes in the material that may be used for the solar energy conversion, giving experimental support to the quantum calculations predictions.

Cu2I2Se6: A Metal-Inorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature.

PubMed

Lin, Wenwen; Stoumpos, Constantinos C; Kontsevoi, Oleg Y; Liu, Zhifu; He, Yihui; Das, Sanjib; Xu, Yadong; McCall, Kyle M; Wessels, Bruce W; Kanatzidis, Mercouri G

2018-02-07

Cu 2 I 2 Se 6 is a new wide-bandgap semiconductor with high stability and great potential toward hard radiation and photon detection. Cu 2 I 2 Se 6 crystallizes in the rhombohedral R3̅m space group with a density of d = 5.287 g·cm -3 and a wide bandgap E g of 1.95 eV. First-principles electronic band structure calculations at the density functional theory level indicate an indirect bandgap and a low electron effective mass m e * of 0.32. The congruently melting compound was grown in centimeter-size Cu 2 I 2 Se 6 single crystals using a vertical Bridgman method. A high electric resistivity of ∼10 12 Ω·cm is readily achieved, and detectors made of Cu 2 I 2 Se 6 single crystals demonstrate high photosensitivity to Ag Kα X-rays (22.4 keV) and show spectroscopic performance with energy resolutions under 241 Am α-particles (5.5 MeV) radiation. The electron mobility is measured by a time-of-flight technique to be ∼46 cm 2 ·V -1 ·s -1 . This value is comparable to that of one of the leading γ-ray detector materials, TlBr, and is a factor of 30 higher than mobility values obtained for amorphous Se for X-ray detection.

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs / In ( As , Sb ) Type-II Superlattices

DOE PAGES

Aytac, Y.; Olson, B. V.; Kim, J. K.; ...

2016-06-01

A set of seven InAs/InAsSb type-II superlattices (T2SLs) were designed to have speci c bandgap energies between 290 meV (4.3 m) and 135 meV (9.2 m) in order to study the e ects of the T2SL bandgap energy on the minority carrier lifetime. A temperature dependent optical pump-probe technique is used to measure the carrier lifetimes, and the e ect of a mid-gap defect level on the carrier recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately -250 12 meV relative to the valence band edge of bulk GaSb for the entiremore » set of T2SL structures, even though the T2SL valence band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs/InAsSb T2SLs is singular and is nearly independent of the exact position of the T2SL bandgap or band edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the bandgap, a result that should signi cantly increase the minority carrier lifetime.« less

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs / In ( As , Sb ) Type-II Superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aytac, Y.; Olson, B. V.; Kim, J. K.

A set of seven InAs/InAsSb type-II superlattices (T2SLs) were designed to have speci c bandgap energies between 290 meV (4.3 m) and 135 meV (9.2 m) in order to study the e ects of the T2SL bandgap energy on the minority carrier lifetime. A temperature dependent optical pump-probe technique is used to measure the carrier lifetimes, and the e ect of a mid-gap defect level on the carrier recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately -250 12 meV relative to the valence band edge of bulk GaSb for the entiremore » set of T2SL structures, even though the T2SL valence band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs/InAsSb T2SLs is singular and is nearly independent of the exact position of the T2SL bandgap or band edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the bandgap, a result that should signi cantly increase the minority carrier lifetime.« less

Compositionally Dependent Nonlinear Optical Bandgap Behavior of Mixed Anodic Oxides in Niobium-Titanium System.

PubMed

Bleckenwegner, Petra; Mardare, Cezarina Cela; Cobet, Christoph; Kollender, Jan Philipp; Hassel, Achim Walter; Mardare, Andrei Ionut

2017-02-13

Optical bandgap mapping of Nb-Ti mixed oxides anodically grown on a thin film parent metallic combinatorial library was performed via variable angle spectroscopic ellipsometry (VASE). A wide Nb-Ti compositional spread ranging from Nb-90 at.% Ti to Nb-15 at.% Ti deposited by cosputtering was used for this purpose. The Nb-Ti library was stepwise anodized at potentials up to 10 V SHE, and the anodic oxides optical properties were mapped along the Nb-Ti library with 2 at.% resolution. The surface dissimilarities along the Nb-Ti compositional gradient were minimized by tuning the deposition parameters, thus allowing a description of the mixed Nb-Ti oxides based on a single Tauc-Lorentz oscillator for data fitting. Mapping of the Nb-Ti oxides optical bandgap along the entire compositional spread showed a clear deviation from the linear model based on mixing individual Nb and Ti electronegativities proportional to their atomic fractions. This is attributed to the strong amorphization and an in-depth compositional gradient of the mixed oxides. A systematic optical bandgap decrease toward values as low as 2.0 eV was identified at approximately 50 at.% Nb. Mixing of Nb 2 O 5 and TiO 2 with both amorphous and crystalline phases is concluded, whereas the possibility of complex Nb a Ti b O y oxide formation during anodization is unlikely.

Bandgap- and local field-dependent photoactivity of Ag/black phosphorus nanohybrids

DOE PAGES

Lei, Wanying; Zhang, Tingting; Liu, Ping; ...

2016-10-18

Black phosphorus (BP) is the most exciting post-graphene layered nanomaterial that serendipitously bridges the 2D materials gap between semimetallic graphene and large bandgap transition-metal dichalcogenides in terms of high charge-carrier mobility and tunable direct bandgap, yet research into BP-based solar to chemical energy conversion is still in its infancy. Herein, a novel hybrid photocatalyst with Ag nanoparticles supported on BP nanosheets is prepared using a chemical reduction approach. Spin-polarized density functional theory (DFT) calculations show that Ag nanoparticles are stabilized on BP by covalent bonds at the Ag/BP interface and Ag–Ag interactions. In the visible-light photocatalysis of rhodamine B bymore » Ag/BP plasmonic nanohybrids, a significant rise in photoactivity compared with pristine BP nanosheets is observed either by decreasing BP layer thickness or increasing Ag particle size, with the greatest enhancement being up to ~20-fold. By virtue of finite-difference time domain (FDTD) simulations and photocurrent measurements, we give insights into the enhanced photocatalytic performance of Ag/BP nanohybrids, including the effects of BP layer thickness and Ag particle size. In comparison with BP, Ag/BP nanohybrids present intense local field amplification at the perimeter of Ag NPs, which is increased by either decreasing the BP layer thickness from multiple to few layers or increasing the Ag particle size from 20 to 40 nm. Additionally, when the BP layer thickness is decreased from multiple to few layers, the bandgap becomes favorable to generate more strongly oxidative holes in the proximity of the Ag/BP interface to enhance photoactivity. Our findings illustrate a synergy between locally enhanced electric fields and BP bandgap, in which BP layer thickness and Ag particle size can be independently tuned to enhance photoactivity. Lastly, this study may open a new avenue for further exploiting BP-based plasmonic nanostructures in photocatalysis, photodetectors, and photovoltaics.« less

Bandgap- and local field-dependent photoactivity of Ag/black phosphorus nanohybrids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lei, Wanying; Zhang, Tingting; Liu, Ping

Black phosphorus (BP) is the most exciting post-graphene layered nanomaterial that serendipitously bridges the 2D materials gap between semimetallic graphene and large bandgap transition-metal dichalcogenides in terms of high charge-carrier mobility and tunable direct bandgap, yet research into BP-based solar to chemical energy conversion is still in its infancy. Herein, a novel hybrid photocatalyst with Ag nanoparticles supported on BP nanosheets is prepared using a chemical reduction approach. Spin-polarized density functional theory (DFT) calculations show that Ag nanoparticles are stabilized on BP by covalent bonds at the Ag/BP interface and Ag–Ag interactions. In the visible-light photocatalysis of rhodamine B bymore » Ag/BP plasmonic nanohybrids, a significant rise in photoactivity compared with pristine BP nanosheets is observed either by decreasing BP layer thickness or increasing Ag particle size, with the greatest enhancement being up to ~20-fold. By virtue of finite-difference time domain (FDTD) simulations and photocurrent measurements, we give insights into the enhanced photocatalytic performance of Ag/BP nanohybrids, including the effects of BP layer thickness and Ag particle size. In comparison with BP, Ag/BP nanohybrids present intense local field amplification at the perimeter of Ag NPs, which is increased by either decreasing the BP layer thickness from multiple to few layers or increasing the Ag particle size from 20 to 40 nm. Additionally, when the BP layer thickness is decreased from multiple to few layers, the bandgap becomes favorable to generate more strongly oxidative holes in the proximity of the Ag/BP interface to enhance photoactivity. Our findings illustrate a synergy between locally enhanced electric fields and BP bandgap, in which BP layer thickness and Ag particle size can be independently tuned to enhance photoactivity. Lastly, this study may open a new avenue for further exploiting BP-based plasmonic nanostructures in photocatalysis, photodetectors, and photovoltaics.« less

Four-Terminal All-Perovskite Tandem Solar Cells Achieving Power Conversion Efficiencies Exceeding 23%

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Dewei; Wang, Changlei; Song, Zhaoning

We report on fabrication of 4-terminal all-perovskite tandem solar cells with power conversion efficiencies exceeding 23% by mechanically stacking semitransparent 1.75 eV wide-bandgap FA 0.8Cs 0.2Pb(I 0.7Br 0.3) 3 perovskite top cells with 1.25 eV low-bandgap (FASnI 3) 0.6(MAPbI 3) 0.4 bottom cells. The top cells use MoOx/ITO transparent electrodes and achieve transmittance up to 70% beyond 700 nm.

CONJUGATED POLYMERS AND POLYELECTROLYTES IN SOLAR PHOTOCONVERSION, Final Technical Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schanze, Kirk S

2014-08-05

This DOE-supported program investigated the fundamental properties of conjugated polyelectrolytes, with emphasis placed on studies of excited state energy transport, self-assembly into conjugated polyelectroyte (CPE) based films and colloids, and exciton transport and charge injection in CPE films constructed atop wide bandgap semiconductors. In the most recent grant period we have also extended efforts to examine the properties of low-bandgap donor-acceptor conjugated polyelectrolytes that feature strong visible light absorption and the ability to adsorb to metal-oxide interfaces.

Four-Terminal All-Perovskite Tandem Solar Cells Achieving Power Conversion Efficiencies Exceeding 23%

DOE PAGES

Zhao, Dewei; Wang, Changlei; Song, Zhaoning; ...

2018-01-04

We report on fabrication of 4-terminal all-perovskite tandem solar cells with power conversion efficiencies exceeding 23% by mechanically stacking semitransparent 1.75 eV wide-bandgap FA 0.8Cs 0.2Pb(I 0.7Br 0.3) 3 perovskite top cells with 1.25 eV low-bandgap (FASnI 3) 0.6(MAPbI 3) 0.4 bottom cells. The top cells use MoOx/ITO transparent electrodes and achieve transmittance up to 70% beyond 700 nm.

Intermediate Bandgap Solar Cells From Nanostructured Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, Marcie

2014-10-30

This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

A low band-gap polymer based on unsubstituted benzo[1,2-b:4,5-b']dithiophene for high performance organic photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woong Jung, Jae; Woong Jo, Jea; Liu, Feng

2012-01-01

A low band-gap conjugated polymer, PBDTDPP, composed of unsubstituted benzo[1,2-b:4,5-b']dithiophene and diketopyrrolo[3,4-c]pyrrole was synthesized. The deep HOMO level of PBDTDPP enhances the VOC of a PSC up to 0.82 V and exhibits a PCE of 5.16%, while alkoxy substituted PBDTDPP-OR yields a PCE of 2.24% with a VOC of 0.61 V.

Observation of photobleaching and intensity dependent kinetics in Ge22As22Se56 thin films under sub-bandgap light illumination

NASA Astrophysics Data System (ADS)

Khan, Pritam; Barik, A. R.; Vinod, E. M.; Sangunni, K. S.; Adarsh, K. V.

2015-02-01

We experimentally demonstrate photobleaching (PB) in Ge22As22Se56 thin films, when illuminated with a diode pumped solid state laser (DPSSL) of wavelength 671 nm, which is far below the optical bandgap of the sample. Interestingly, we found that PB is a slow process and occurs even at moderate pump beam intensity of 0.2 W/cm2, however the kinetics remain rather different.

Stabilized wide bandgap MAPbBr xI 3-x perovskite by enhanced grain size and improved crystallinity

DOE PAGES

Hu, Miao; Bi, Cheng; Yuan, Yongbo; ...

2015-12-07

In this study, the light instability of CH 3NH 3PbI xBr 3–x has been raised one of the biggest challenges for its application in tandem solar cells. Here we show that an improved crystallinity and grain size of CH 3NH 3PbI xBr 3–x films could stabilize these materials under one sun illumination, improving both the efficiency and stability of the wide-bandgap perovskite solar cells.

Importance of Schottky barriers for wide-bandgap thermoelectric devices

NASA Astrophysics Data System (ADS)

Wais, M.; Held, K.; Battiato, M.

2018-04-01

The development of thermoelectric devices faces not only the challenge of optimizing the Seebeck coefficient, the electrical and thermal conductivity of the active material, but also further bottlenecks when going from the thermoelectric material to an actual device, e.g., the dopant diffusion at the hot contact. We show that for large bandgap thermoelectrics another aspect can dramatically reduce the efficiency of the device: the formation of Schottky barriers. Understanding the effect, it can then be fixed rather cheaply by a two-metal contact solution.

One-pot synthesis of 4,8-dibromobenzo[1,2-c;4,5-c']bis[1,2,5]thiadiazole.

PubMed

Tam, Teck Lip; Li, Hairong; Wei, Fengxia; Tan, Ke Jie; Kloc, Christian; Lam, Yeng Ming; Mhaisalkar, Subodh G; Grimsdale, Andrew C

2010-08-06

A one-step synthesis of 4,8-dibromobenzo[1,2-c;4,5-c']bis[1,2,5]thiadiazole with use of 1,2,4,5-tetraaminobenzene tetrahydrobromide and thionyl bromide in good yield is reported. This unit can then be used in the synthesis of low bandgap materials via palladium-catalyzed coupling reactions. The approach offers a quick and easy way to prepare low bandgap materials as compared to the current literature methods.

Low loss liquid crystal photonic bandgap fiber in the near-infrared region

NASA Astrophysics Data System (ADS)

Scolari, Lara; Wei, Lei; Gauza, Sebastian; Wu, Shin-Tson; Bjarklev, Anders

2011-01-01

We infiltrate a perdeuterated liquid crystal with a reduced infrared absorption in a photonic crystal fiber. The H atoms of this liquid crystal were substituted with D atoms in order to move the vibration bands which cause absorption loss to longer wavelengths and therefore reduce the absorption in the spectral range of 1-2 μm. We achieve in the middle of the near-infrared transmission bandgap the lowest loss (about 1 dB) ever reported for this kind of devices.

Photonic bandgap single-mode optical fibre with ytterbium-doped silica glass core

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorova, O N; Semenov, S L; Vel'miskin, V V

2011-01-24

A photonic bandgap fibre with an ytterbium-doped silica glass core is fabricated and investigated. The possibility of implementing single-mode operation of such fibres in a wide spectral range at a large (above 20 {mu}m) mode field diameter makes them promising for fibre lasers and amplifiers. To ensure a high quality of the beam emerging from the fibre, particular attention is paid to increasing the optical homogeneity of the ytterbium-doped core glass. (optical fibres)

Synthesis, Morphological and Electrical Characterization of Solution Processable Low Bandgap Organic Materials

DTIC Science & Technology

2008-12-05

bandgap: 1.98 eV Okamoto, Toshihiro; Senatore, Michelle L.; Ling, Mang-Mang; Mallik , Abhijit B.; Tang, Ming L.; Bao, Zhenan. Synthesis...grant: 1. R.A.B. Devine, M.M. Ling, A. Mallik , M.Roberts, Z. Bao, "X-irradiation Effects on Top Contact, Pentacene Based Field Effect Transistors...Semiconductors: Asymmetric Linear Acenes Containing Sulphur ",J. Am. Chem. Soc., 128, 160002-160003,2006. 3. T. Okamoto, M.L. Senatore, M.M. Ling, A.B. Mallik

Project: Micromachined High-Frequency Circuits For Sub-mm-wave Sensors

NASA Technical Reports Server (NTRS)

Papapolymerou, Ioannis John

2004-01-01

A novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebysbev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 micron thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds.

Photopyroelectric spectroscopic studies of ZnO-MnO(2)-Co(3)O(4)-V(2)O(5) ceramics.

PubMed

Rizwan, Zahid; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2011-01-01

Photopyroelectric (PPE) spectroscopy is a nondestructive tool that is used to study the optical properties of the ceramics (ZnO + 0.4MnO(2) + 0.4Co(3)O(4) + xV(2)O(5)), x = 0-1 mol%. Wavelength of incident light, modulated at 10 Hz, was in the range of 300-800 nm. PPE spectrum with reference to the doping level and sintering temperature is discussed. Optical energy band-gap (E(g)) was 2.11 eV for 0.3 mol% V(2)O(5) at a sintering temperature of 1025 °C as determined from the plot (ρhυ)(2)versushυ. With a further increase in V(2)O(5), the value of E(g) was found to be 2.59 eV. Steepness factor 'σ(A)' and 'σ(B)', which characterize the slope of exponential optical absorption, is discussed with reference to the variation of E(g). XRD, SEM and EDAX are also used for characterization of the ceramic. For this ceramic, the maximum relative density and grain size was observed to be 91.8% and 9.5 μm, respectively.

Photopyroelectric Spectroscopic Studies of ZnO-MnO2-Co3O4-V2O5 Ceramics

PubMed Central

Rizwan, Zahid; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2011-01-01

Photopyroelectric (PPE) spectroscopy is a nondestructive tool that is used to study the optical properties of the ceramics (ZnO + 0.4MnO2 + 0.4Co3O4 + xV2O5), x = 0–1 mol%. Wavelength of incident light, modulated at 10 Hz, was in the range of 300–800 nm. PPE spectrum with reference to the doping level and sintering temperature is discussed. Optical energy band-gap (Eg) was 2.11 eV for 0.3 mol% V2O5 at a sintering temperature of 1025 °C as determined from the plot (ρhυ)2 versus hυ. With a further increase in V2O5, the value of Eg was found to be 2.59 eV. Steepness factor ‘σA’ and ‘σB’, which characterize the slope of exponential optical absorption, is discussed with reference to the variation of Eg. XRD, SEM and EDAX are also used for characterization of the ceramic. For this ceramic, the maximum relative density and grain size was observed to be 91.8% and 9.5 μm, respectively. PMID:21673911

Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

DOEpatents

Katiyar, Ram S.; Bhattacharya, Pijush; Das, Rasmi R.

2006-07-25

A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al₂O₃ substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.

Structural correlations in the generation of polaron pairs in low-bandgap polymers for photovoltaics

NASA Astrophysics Data System (ADS)

Tautz, Raphael; da Como, Enrico; Limmer, Thomas; Feldmann, Jochen; Egelhaaf, Hans-Joachim; von Hauff, Elizabeth; Lemaur, Vincent; Beljonne, David; Yilmaz, Seyfullah; Dumsch, Ines; Allard, Sybille; Scherf, Ullrich

2012-07-01

Polymeric semiconductors are materials where unique optical and electronic properties often originate from a tailored chemical structure. This allows for synthesizing conjugated macromolecules with ad hoc functionalities for organic electronics. In photovoltaics, donor-acceptor co-polymers, with moieties of different electron affinity alternating on the chain, have attracted considerable interest. The low bandgap offers optimal light-harvesting characteristics and has inspired work towards record power conversion efficiencies. Here we show for the first time how the chemical structure of donor and acceptor moieties controls the photogeneration of polaron pairs. We show that co-polymers with strong acceptors show large yields of polaron pair formation up to 24% of the initial photoexcitations as compared with a homopolymer (η=8%). π-conjugated spacers, separating the donor and acceptor centre of masses, have the beneficial role of increasing the recombination time. The results provide useful input into the understanding of polaron pair photogeneration in low-bandgap co-polymers for photovoltaics.

Mach-Zehnder atom interferometer inside an optical fiber

NASA Astrophysics Data System (ADS)

Xin, Mingjie; Leong, Wuiseng; Chen, Zilong; Lan, Shau-Yu

2017-04-01

Precision measurement with light-pulse grating atom interferometry in free space have been used in the study of fundamental physics and applications in inertial sensing. Recent development of photonic band-gap fibers allows light for traveling in hollow region while preserving its fundamental Gaussian mode. The fibers could provide a very promising platform to transfer cold atoms. Optically guided matter waves inside a hollow-core photonic band-gap fiber can mitigate diffraction limit problem and has the potential to bring research in the field of atomic sensing and precision measurement to the next level of compactness and accuracy. Here, we will show our experimental progress towards an atom interferometer in optical fibers. We designed an atom trapping scheme inside a hollow-core photonic band-gap fiber to create an optical guided matter waves system, and studied the coherence properties of Rubidium atoms in this optical guided system. We also demonstrate a Mach-Zehnder atom interferometer in the optical waveguide. This interferometer is promising for precision measurements and designs of mobile atomic sensors.

Second-harmonic generation at angular incidence in a negative-positive index photonic band-gap structure.

PubMed

D'Aguanno, Giuseppe; Mattiucci, Nadia; Scalora, Michael; Bloemer, Mark J

2006-08-01

In the spectral region where the refractive index of the negative index material is approximately zero, at oblique incidence, the linear transmission of a finite structure composed of alternating layers of negative and positive index materials manifests the formation of a new type of band gap with exceptionally narrow band-edge resonances. In particular, for TM-polarized (transverse magnetic) incident waves, field values that can be achieved at the band edge may be much higher compared to field values achievable in standard photonic band-gap structures. We exploit the unique properties of these band-edge resonances for applications to nonlinear frequency conversion, second-harmonic generation, in particular. The simultaneous availability of high field localization and phase matching conditions may be exploited to achieve second-harmonic conversion efficiencies far better than those achievable in conventional photonic band-gap structures. Moreover, we study the role played by absorption within the negative index material, and find that the process remains efficient even for relatively high values of the absorption coefficient.

Efficient low bandgap polymer solar cell with ordered heterojunction defined by nanoimprint lithography.

PubMed

Yang, Yi; Mielczarek, Kamil; Zakhidov, Anvar; Hu, Walter

2014-11-12

In this work, we demonstrate the feasibility of using nanoimprint lithography (NIL) to make efficient low bandgap polymer solar cells with well-ordered heterojunction. High quality low bandgap conjugated polymer poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT) nanogratings are fabricated using this technique for the first time. The geometry effect of PCPDTBT nanostructures on the solar cell performance is investigated by making PCPDTBT/C70 solar cells with different feature sizes of PCPDTBT nanogratings. It is found that the power conversion efficiency (PCE) increases with increasing nanograting height, PCPDTBT/C70 junction area, and decreasing nanograting width. We also find that NIL makes PCPDTBT chains interact more strongly and form an improved structural ordering. Solar cells made on the highest aspect ratio PCPDTBT nanostructures are among the best reported devices using the same material with a PCE of 5.5%.

HIGH-k GATE DIELECTRIC: AMORPHOUS Ta/La2O3 FILMS GROWN ON Si AT LOW PRESSURE

NASA Astrophysics Data System (ADS)

Bahari, Ali; Khorshidi, Zahra

2014-09-01

In the present study, Ta/La2O3 films (La2O3 doped with Ta2O5) as a gate dielectric were prepared using a sol-gel method at low pressure. Ta/La2O3 film has some hopeful properties as a gate dielectric of logic device. The structure and morphology of Ta/La2O3 films were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Electrical properties of films were performed using capacitance-voltage (C-V) and current density-voltage (J-V) measurements. The optical bandgap of samples was studied by UV-visible optical absorbance measurement. The optical bandgap, Eopt, is determined from the absorbance spectra. The obtained results show that Ta/La2O3 film as a good gate dielectric has amorphous structure, good thermal stability, high dielectric constant (≈ 25), low leakage current and wide bandgap (≈ 4.7 eV).

Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions

NASA Astrophysics Data System (ADS)

Ning, Cun-Zheng; Dou, Letian; Yang, Peidong

2017-12-01

Over the past decade, tremendous progress has been achieved in the development of nanoscale semiconductor materials with a wide range of bandgaps by alloying different individual semiconductors. These materials include traditional II-VI and III-V semiconductors and their alloys, inorganic and hybrid perovskites, and the newly emerging 2D materials. One important common feature of these materials is that their nanoscale dimensions result in a large tolerance to lattice mismatches within a monolithic structure of varying composition or between the substrate and target material, which enables us to achieve almost arbitrary control of the variation of the alloy composition. As a result, the bandgaps of these alloys can be widely tuned without the detrimental defects that are often unavoidable in bulk materials, which have a much more limited tolerance to lattice mismatches. This class of nanomaterials could have a far-reaching impact on a wide range of photonic applications, including tunable lasers, solid-state lighting, artificial photosynthesis and new solar cells.

Band-gap analysis of a novel lattice with a hierarchical periodicity using the spectral element method

NASA Astrophysics Data System (ADS)

Wu, Zhijing; Li, Fengming; Zhang, Chuanzeng

2018-05-01

Inspired by the hierarchical structures of butterfly wing surfaces, a new kind of lattice structures with a two-order hierarchical periodicity is proposed and designed, and the band-gap properties are investigated by the spectral element method (SEM). The equations of motion of the whole structure are established considering the macro and micro periodicities of the system. The efficiency of the SEM is exploited in the modeling process and validated by comparing the results with that of the finite element method (FEM). Based on the highly accurate results in the frequency domain, the dynamic behaviors of the proposed two-order hierarchical structures are analyzed. An original and interesting finding is the existence of the distinct macro and micro stop-bands in the given frequency domain. The mechanisms for these two types of band-gaps are also explored. Finally, the relations between the hierarchical periodicities and the different types of the stop-bands are investigated by analyzing the parametrical influences.

Design of High Impedance Electromagnetic Surfaces for Mutual Coupling Reduction in Patch Antenna Array

PubMed Central

Islam, Mohammad Tariqul; Alam, Md. Shahidul

2013-01-01

A compact planar meander-bridge high impedance electromagnetic structure (MBHIES) was designed and its bandgap characteristics, mutual coupling reduction abilities were studied and compared in detail. Several parametric analyses were performed to obtain optimized design values and the transmission responses were calculated through the suspended microstrip line and waveguide simulation methods. The achieved bandgap is 2.3 GHz (2.55–4.85 GHz) with −61 dB minimum transmission coefficient level at the center frequency of 3.6 GHz. To see the effectiveness, the proposed design was inserted between a microstrip patch antenna array which operates at 3.8 GHz and whose operating bandwidth falls within the MBHIES bandgap. The surface wave suppression phenomenon was analyzed and simulated results are verified by measuring the fabricated prototypes, both are in good agreement. The configuration reduced the mutual coupling by 20.69 dB in simulation and 19.18 dB in measurement, without affecting the radiation characteristics of the array but increasing the gain slightly. PMID:28809299

Design of High Impedance Electromagnetic Surfaces for Mutual Coupling Reduction in Patch Antenna Array.

PubMed

Islam, Mohammad Tariqul; Alam, Md Shahidul

2013-01-07

A compact planar meander-bridge high impedance electromagnetic structure (MBHIES) was designed and its bandgap characteristics, mutual coupling reduction abilities were studied and compared in detail. Several parametric analyses were performed to obtain optimized design values and the transmission responses were calculated through the suspended microstrip line and waveguide simulation methods. The achieved bandgap is 2.3 GHz (2.55-4.85 GHz) with -61 dB minimum transmission coefficient level at the center frequency of 3.6 GHz. To see the effectiveness, the proposed design was inserted between a microstrip patch antenna array which operates at 3.8 GHz and whose operating bandwidth falls within the MBHIES bandgap. The surface wave suppression phenomenon was analyzed and simulated results are verified by measuring the fabricated prototypes, both are in good agreement. The configuration reduced the mutual coupling by 20.69 dB in simulation and 19.18 dB in measurement, without affecting the radiation characteristics of the array but increasing the gain slightly.

Band structure of one-dimensional photonic crystal with graphene layers using the Fresnel coefficients method

NASA Astrophysics Data System (ADS)

Jafari, A.; Rahmat, A.

2018-04-01

In this paper, we have calculated the band structure of an instance of one-dimensional photonic crystal (1DPC) composed of double-layered dielectrics via the Fresnel coefficients method. Then, we supposed the addition of a thin layer of graphene to each dielectric layer and the given photonic crystal (PC) composed of dielectric-graphene composites. The effects of graphene layers on the PC band structure were evaluated. We found out that according to the effective medium theory unlike the TE polarization, the electric permittivity of the dielectric layers changed at TM polarization. As such, the band structure of PC for TM polarization changed, too. Moreover, instead of bandgap related to “zero averaged refractive index” an approximately omnidirectional bandgap appeared and a related bandgap to “𝜀 = 0” disappeared. In addition, a new angular gap branch appeared at a new frequency at TM polarization in which the width of gap increased as the angle increased.

III-V aresenide-nitride semiconductor materials and devices

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

1997-01-01

III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Thermally enhanced photoluminescence for heat harvesting in photovoltaics

PubMed Central

Manor, Assaf; Kruger, Nimrod; Sabapathy, Tamilarasan; Rotschild, Carmel

2016-01-01

The maximal Shockley–Queisser efficiency limit of 41% for single-junction photovoltaics is primarily caused by heat dissipation following energetic-photon absorption. Solar-thermophotovoltaics concepts attempt to harvest this heat loss, but the required high temperatures (T>2,000 K) hinder device realization. Conversely, we have recently demonstrated how thermally enhanced photoluminescence is an efficient optical heat-pump that operates in comparably low temperatures. Here we theoretically and experimentally demonstrate such a thermally enhanced photoluminescence based solar-energy converter. Here heat is harvested by a low bandgap photoluminescent absorber that emits thermally enhanced photoluminescence towards a higher bandgap photovoltaic cell, resulting in a maximum theoretical efficiency of 70% at a temperature of 1,140 K. We experimentally demonstrate the key feature of sub-bandgap photon thermal upconversion with an efficiency of 1.4% at only 600 K. Experiments on white light excitation of a tailored Cr:Nd:Yb glass absorber suggest that conversion efficiencies as high as 48% at 1,500 K are in reach. PMID:27762271

Conversion efficiency limits and bandgap designs for multi-junction solar cells with internal radiative efficiencies below unity.

PubMed

Zhu, Lin; Mochizuki, Toshimitsu; Yoshita, Masahiro; Chen, Shaoqiang; Kim, Changsu; Akiyama, Hidefumi; Kanemitsu, Yoshihiko

2016-05-16

We calculated the conversion-efficiency limit ηsc and the optimized subcell bandgap energies of 1 to 5 junction solar cells without and with intermediate reflectors under 1-sun AM1.5G and 1000-sun AM1.5D irradiations, particularly including the impact of internal radiative efficiency (ηint) below unity for realistic subcell materials on the basis of an extended detailed-balance theory. We found that the conversion-efficiency limit ηsc significantly drops when the geometric mean ηint* of all subcell ηint in the stack reduces from 1 to 0.1, and that ηsc degrades linearly to logηint* for ηint* below 0.1. For ηint*<0.1 differences in ηsc due to additional intermediate reflectors became very small if all subcells are optically thick for sun light. We obtained characteristic optimized bandgap energies, which reflect both ηint* decrease and AM1.5 spectral gaps. These results provide realistic efficiency targets and design principles.

Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer

NASA Astrophysics Data System (ADS)

Bahuguna, Bhagwati Prasad; Saini, L. K.; Sharma, Rajesh O.; Tiwari, Brajesh

2018-05-01

We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer.

Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

NASA Astrophysics Data System (ADS)

Pérez-Tomás, Amador; Chikoidze, Ekaterine; Jennings, Michael R.; Russell, Stephen A. O.; Teherani, Ferechteh H.; Bove, Philippe; Sandana, Eric V.; Rogers, David J.

2018-03-01

Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. Here, we review our integration of WBG and ultra WBG semiconductor oxides into different solar cells architectures where they have the role of transparent conductive electrodes and/or barriers bringing unique functionalities into the structure such above bandgap voltages or switchable interfaces. We also give an overview of the state-of-the-art and perspectives for the emerging semiconductor β- Ga2O3, which is widely forecast to herald the next generation of power electronic converters because of the combination of an UWBG with the capacity to conduct electricity. This opens unprecedented possibilities for the monolithic integration in solar cells of both self-powered logic and power electronics functionalities. Therefore, WBG and UWBG oxides have enormous promise to become key enabling technologies for the zero emissions smart integration of the internet of things.

Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures

DOE PAGES

Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.; ...

2017-02-17

Compared with their bulk counterparts, 2D materials can sustain much higher elastic strain at which optical quantities such as bandgaps and absorption spectra governing optoelectronic device performance can be modified with relative ease. Using first-principles density functional theory and quasiparticle GW calculations, we demonstrate how uniaxial tensile strain can be utilized to optimize the electronic and optical properties of transition metal dichalcogenide lateral (in-plane) heterostructures such as MoX 2/WX 2 (X = S, Se, Te). We find that these lateral-type heterostructures may facilitate efficient electron–hole separation for light detection/harvesting and preserve their type II characteristic up to 12% of uniaxialmore » strain. Based on the strain-dependent bandgap and band offset, we show that uniaxial tensile strain can significantly increase the power conversion efficiency of these lateral heterostructures. Our results suggest that these strain-engineered lateral heterostructures are promising for optimizing optoelectronic device performance by selectively tuning the energetics of the bandgap.« less

Simultaneous monitoring the real and imaginary parts of the analyte refractive index using liquid-core photonic bandgap Bragg fibers.

PubMed

Li, Jingwen; Qu, Hang; Skorobogatiy, Maksim

2015-09-07

We demonstrate simultaneous monitoring of the real and imaginary parts of the liquid analyte refractive index by using a hollow-core Bragg fiber. We apply this two-channel fiber sensor to monitor concentrations of various commercial cooling oils. The sensor operates using spectral monitoring of the fiber bandgap center wavelength, as well as monitoring of the fiber transmission amplitude at mid-bandgap position. The sensitivity of the fiber sensor to changes in the real part of the core refractive index is found to be 1460nm/Refractive index unit (RIU). By using spectral modality and effective medium theory, we determine the concentrations of the two commercial fluids from the measured refractive indices with an accuracy of ~0.57% for both low- and high-loss oils. Moreover, using an amplitude-based detection modality allows determination of the oil concentration with accuracy of ~1.64% for low-loss oils and ~2.81% for the high-loss oils.

Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

PubMed Central

Lee, Eunha; Benayad, Anass; Shin, Taeho; Lee, HyungIk; Ko, Dong-Su; Kim, Tae Sang; Son, Kyoung Seok; Ryu, Myungkwan; Jeon, Sanghun; Park, Gyeong-Su

2014-01-01

Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3–10 cm2/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm2/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. Here, we present electronic, optical and microstructural properties of ZnON, a composite of Zn3N2 and ZnO. Well-optimized ZnON material presents high mobility exceeding 100 cm2V−1s−1, the band-gap of 1.3 eV and nanocrystalline structure with multiphase. We found that mobility, microstructure, electronic structure, band-gap and trap properties of ZnON are varied with nitrogen concentration in ZnO. Accordingly, the performance of ZnON-based device can be adjustable to meet the requisite of both switch device and image-sensor potentials. These results demonstrate how device and material attributes of ZnON can be optimized for new device strategies in display technology and we expect the ZnON will be applicable to a wide range of imaging/display devices. PMID:24824778

Beyond Donor-Acceptor (D-A) Approach: Structure-Optoelectronic Properties-Organic Photovoltaic Performance Correlation in New D-A1 -D-A2 Low-Bandgap Conjugated Polymers.

PubMed

Chochos, Christos L; Drakopoulou, Sofia; Katsouras, Athanasios; Squeo, Benedetta M; Sprau, Christian; Colsmann, Alexander; Gregoriou, Vasilis G; Cando, Alex-Palma; Allard, Sybille; Scherf, Ullrich; Gasparini, Nicola; Kazerouni, Negar; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-04-01

Low-bandgap near-infrared polymers are usually synthesized using the common donor-acceptor (D-A) approach. However, recently polymer chemists are introducing more complex chemical concepts for better fine tuning of their optoelectronic properties. Usually these studies are limited to one or two polymer examples in each case study so far, though. In this study, the dependence of optoelectronic and macroscopic (device performance) properties in a series of six new D-A 1 -D-A 2 low bandgap semiconducting polymers is reported for the first time. Correlation between the chemical structure of single-component polymer films and their optoelectronic properties has been achieved in terms of absorption maxima, optical bandgap, ionization potential, and electron affinity. Preliminary organic photovoltaic results based on blends of the D-A 1 -D-A 2 polymers as the electron donor mixed with the fullerene derivative [6,6]-phenyl-C 71 -butyric acid methyl ester demonstrate power conversion efficiencies close to 4% with short-circuit current densities (J sc ) of around 11 mA cm -2 , high fill factors up to 0.70, and high open-circuit voltages (V oc s) of 0.70 V. All the devices are fabricated in an inverted architecture with the photoactive layer processed in air with doctor blade technique, showing the compatibility with roll-to-roll large-scale manufacturing processes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Actively tunable transverse waves in soft membrane-type acoustic metamaterials

NASA Astrophysics Data System (ADS)

Zhou, Weijian; Wu, Bin; Muhammad, Du, Qiujiao; Huang, Guoliang; Lü, Chaofeng; Chen, Weiqiu

2018-04-01

Membrane-type metamaterials have shown a fantastic capacity for manipulating acoustic waves in the low frequency range. They have the advantages of simple geometry, light weight, and active tunability. In general, these membrane-type metamaterials contain a rigid frame support, leading to a fixed configuration. However, in some instances, flexible and reconfigurable devices may be desirable. A soft membrane-type acoustic metamaterial that is highly flexible and controllable is designed here. Different from the previously designed membrane-type metamaterials, the stiff supporting frame is removed and the stiff mass at the center of each unit cell is replaced by the soft mass, realized by bonding fine metallic particles in the central region. In contrast to the previous studies, the propagation of elastic transverse waves in such a soft metamaterial is investigated by employing the plane wave expansion method. Both the Bragg scattering bandgaps and locally resonant bandgaps are found to coexist in the soft metamaterial. The influences of structural parameters and finite biaxial pre-stretch on the dynamic behavior of this soft metamaterial are carefully examined. It is shown that whether or not the wave propagation characteristics are sensitive to the finite deformation does not depend on the property and pre-stretch of the membrane. In addition, a broadband complete bandgap and a pseudo-gap formed by the combination of two extremely adjacent directional bandgaps are observed in the low-frequency range, and both can be controlled by the finite pre-stretch.

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

PubMed

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.

PubMed

Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah A; Shakfa, Mohammad Khaled; Ng, Tien Khee; Ooi, Boon S

2018-06-13

p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity, while Mott-Schottky experiments measured a hole concentration of 1.3 × 1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and an optimized p-type AlGaN contact layer for UV-transparency. The ∼335 nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate the electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

Highly Efficient Perovskite-Perovskite Tandem Solar Cells Reaching 80% of the Theoretical Limit in Photovoltage.

PubMed

Rajagopal, Adharsh; Yang, Zhibin; Jo, Sae Byeok; Braly, Ian L; Liang, Po-Wei; Hillhouse, Hugh W; Jen, Alex K-Y

2017-09-01

Organic-inorganic hybrid perovskite multijunction solar cells have immense potential to realize power conversion efficiencies (PCEs) beyond the Shockley-Queisser limit of single-junction solar cells; however, they are limited by large nonideal photovoltage loss (V oc,loss ) in small- and large-bandgap subcells. Here, an integrated approach is utilized to improve the V oc of subcells with optimized bandgaps and fabricate perovskite-perovskite tandem solar cells with small V oc,loss . A fullerene variant, Indene-C 60 bis-adduct, is used to achieve optimized interfacial contact in a small-bandgap (≈1.2 eV) subcell, which facilitates higher quasi-Fermi level splitting, reduces nonradiative recombination, alleviates hysteresis instabilities, and improves V oc to 0.84 V. Compositional engineering of large-bandgap (≈1.8 eV) perovskite is employed to realize a subcell with a transparent top electrode and photostabilized V oc of 1.22 V. The resultant monolithic perovskite-perovskite tandem solar cell shows a high V oc of 1.98 V (approaching 80% of the theoretical limit) and a stabilized PCE of 18.5%. The significantly minimized nonideal V oc,loss is better than state-of-the-art silicon-perovskite tandem solar cells, which highlights the prospects of using perovskite-perovskite tandems for solar-energy generation. It also unlocks opportunities for solar water splitting using hybrid perovskites with solar-to-hydrogen efficiencies beyond 15%. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light and Electrically Induced Phase Segregation and Its Impact on the Stability of Quadruple Cation High Bandgap Perovskite Solar Cells.

PubMed

Duong, The; Mulmudi, Hemant Kumar; Wu, YiLiang; Fu, Xiao; Shen, Heping; Peng, Jun; Wu, Nandi; Nguyen, Hieu T; Macdonald, Daniel; Lockrey, Mark; White, Thomas P; Weber, Klaus; Catchpole, Kylie

2017-08-16

Perovskite material with a bandgap of 1.7-1.8 eV is highly desirable for the top cell in a tandem configuration with a lower bandgap bottom cell, such as a silicon cell. This can be achieved by alloying iodide and bromide anions, but light-induced phase-segregation phenomena are often observed in perovskite films of this kind, with implications for solar cell efficiency. Here, we investigate light-induced phase segregation inside quadruple-cation perovskite material in a complete cell structure and find that the magnitude of this phenomenon is dependent on the operating condition of the solar cell. Under short-circuit and even maximum power point conditions, phase segregation is found to be negligible compared to the magnitude of segregation under open-circuit conditions. In accordance with the finding, perovskite cells based on quadruple-cation perovskite with 1.73 eV bandgap retain 94% of the original efficiency after 12 h operation at the maximum power point, while the cell only retains 82% of the original efficiency after 12 h operation at the open-circuit condition. This result highlights the need to have standard methods including light/dark and bias condition for testing the stability of perovskite solar cells. Additionally, phase segregation is observed when the cell was forward biased at 1.2 V in the dark, which indicates that photoexcitation is not required to induce phase segregation.

Composition and temperature dependent optical properties of AlxGa1-xN alloy by spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Liu, Yao; Li, Qing Xuan; Wan, Ling Yu; Kucukgok, Bahadir; Ghafari, Ehsan; Ferguson, Ian T.; Zhang, Xiong; Wang, Shuchang; Feng, Zhe Chuan; Lu, Na

2017-11-01

A series of AlxGa1-xN/AlN/Sapphire films with x = 0.35-0.75 and different thickness of epi-layer were prepared by metalorganic chemical vapor deposition (MOCVD). Spectroscopic ellipsometry (SE) was used to study the temperature-dependent refractive indices and optical bandgaps of the AlxGa1-xN films ranging from 300 to 823 K. Parametric semiconductor (PSEMI) models were used to describe the dielectric functions of AlGaN/AlN layers. The fitting results of refractive index, energy bandgap, thickness and surface roughness at 300 K are in good agreement with photoluminescence (PL), scanning electron microscopy (SEM) measurements and the existing literature. Our finding indicates that the crystal quality of the samples with x = 0.47 and 0.60 are better than those with x = 0.35 and 0.75. As the temperature rises, the increasing of refractive index for the low Al content AlxGa1-xN layers is stronger than that of high Al content in the transparent region, and the reduction of bandgap with high Al content is larger than that of low Al content. For all the samples (x = 0.35-0.75), an analytical expression for temperature-dependent refractive index in the wavelength range of 195-1650 nm was obtained using the Sellmeier law, and the quantitative analysis of the SE-derived temperature-dependent bandgap was conducted by using the Bose-Einstein equation.

AlInAsSb for GaSb-based multi-junction solar cells

NASA Astrophysics Data System (ADS)

Tournet, J.; Rouillard, Y.; Tournié, E.

2018-02-01

Bandgap engineering, by means of alloying or inserting nanostructures, is the bedrock of high efficiency photovoltaics. III-V quaternary alloys in particular enable bandgap tailoring of a multi-junction subcell while conserving a single lattice parameter. Among the possible candidates, AlInAsSb could in theory reach the widest range of bandgap energies while being lattice-matched to InP or GaSb. Although these material systems are still emerging photovoltaic segments, they do offer advantages for multi-junction design. GaSbbased structures in particular can make use of highly efficient GaSb/InAs tunnel junctions to connect the subcells. There has been only little information concerning GaSb-lattice matched AlInAsSb in the literature. The alloy's miscibility gap can be circumvented by the use of non-equilibrium techniques. Nevertheless, appropriate growth conditions remain to be found in order to produce a stable alloy. Furthermore, the abnormally low bandgap energies reported for the material need to be confirmed and interpreted with a multi-junction perspective. In this work, we propose a tandem structure made of an AlInAsSb top cell and a GaSb bottom cell. An epitaxy study of the AlInAsSb alloy lattice-matched to GaSb was first performed. The subcells were then grown and processed. The GaSb subcell yielded an efficiency of 5.9% under 1 sun and the tandem cell is under optimization. Preliminary results are presented in this document.

Fusing Benzo[c][1,2,5]oxadiazole Unit with Thiophene for Constructing Wide-bandgap High-performance IDT-based Polymer Solar Cell Donor Material.

PubMed

Song, Xin; Fan, Meijie; Zhang, Kaili; Ding, Dakang; Chen, Weiye; Li, Yonghai; Yu, Liangmin; Sun, Mingliang; Yang, Renqiang

2018-04-01

Benzo[c][1,2,5]oxadiazole (BO) moiety is a strong electron-withdrawing unit compared to benzo[c][1,2,5]thiadiazole (BT). It is usually introduced as an acceptor to construct narrow band-gap donor-acceptor (D-A) materials. Herein, the π-extended conjugated moiety dithieno[3',2':3,4″;2,3″:5,6]benzo[1,2-c][1,2,5]oxadiazole (BOT) was adopted as the acceptor moiety to design D-A polymers. Considering the more extended π-conjugated molecular system of BOT compared to the BO unit, a narrower optical band-gap is expected for BOT-based IDT polymer (PIDT-BOT). Unexpectedly, the UV-vis absorption spectra of PIDT-BOT films display a great hypochromatic shift of about 60 nm compared to a BO-based analog (PIDT-BO). The optical band-gaps of the materials are broadened from 1.63 eV (PIDT-BO) to 2.00 eV (PIDT-BOT) accordingly. Although the range of external quantum efficiency (EQE) of PIDT-BOT-based polymer solar cell (PSC) devices is not as wide as for PIDT-BO-based devices, the EQE response intensities of the PIDT-BOT based device are evidently high. As a result, PSC devices based on PIDT-BOT reveal the best power conversion efficiency at 6.08%. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Band gap modulation of mono and bi-layer hexagonal ZnS under transverse electric field and bi-axial strain: A first principles study

NASA Astrophysics Data System (ADS)

Rai, D. P.; Kaur, Sumandeep; Srivastava, Sunita

2018-02-01

Density functional theory has been employed to study the electronic and mechanical properties of the monolayer and bilayer ZnS. AB stacked ZnS bilayer is found to be energetically more favorable over the AA stacked ZnS bilayer. The electronic bandgap decreases on moving from monolayer to bilayer. Application of positive transverse electric field in AA/AB stacked bilayers leads to a semiconductor to metal transition at 1.10 V/Å. Reversed polarity of electric field, on the other hand, leads to an asymmetric behavior of the bandgap for AB stacking while the behavior of the bandgap in AA stacking is polarity independent. The strong dependency of bandgap on polarity of electric field in AB stacked ZnS bilayer is due to the balancing of external field with the induced internal field which arises due the electronegativity and heterogeneity in the arrangements of atoms. The electronic structure varies with the variation of applied biaxial strain (compression/tensile). We report an increase in band gap in both single and double layers under compression up to -8.0%, which can be attributed to greater superposition of atomic orbitals (Zn-d and S-p hybridization). We expect that our results may stimulate more theoretical and experimental work on hexagonal multi-layers of ZnS employing external field (temperature, pressure, field etc.) for future applications of our present work.

The effect of cation doping on the morphology, optical and structural properties of highly oriented wurtzite ZnO-nanorod arrays grown by a hydrothermal method

NASA Astrophysics Data System (ADS)

Hassanpour, A.; Guo, P.; Shen, S.; Bianucci, P.

2017-10-01

Undoped and C-doped (C: Mg2+, Ni2+, Mn2+, Co2+, Cu2+, Cr3+) ZnO nanorods were synthesized by a hydrothermal method at temperatures as low as 60 °C. The effect of doping on the morphology of the ZnO nanorods was visualized by taking their cross section and top SEM images. The results show that the size of nanorods was increased in both height and diameter by cation doping. The crystallinity change of the ZnO nanorods due to each doping element was thoroughly investigated by an x-ray diffraction (XRD). The XRD patterns show that the wurtzite crystal structure of ZnO nanorods was maintained after cation addition. The optical Raman-active modes of undoped and cation-doped nanorods were measured with a micro-Raman setup at room temperature. The surface chemistry of samples was investigated by x-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy. Finally, the effect of each cation dopant on band-gap shift of the ZnO nanorods was investigated by a photoluminescence setup at room temperature. Although the amount of dopants (Mg2+, Ni2+, and Co2+) was smaller than the amount of Mn2+, Cu2+, and Cr3+ in the nanorods, their effect on the band structure of the ZnO nanorods was profound. The highest band-gap shift was achieved for a Co-doped sample, and the best crystal orientation was for Mn-doped ZnO nanorods. Our results can be used as a comprehensive reference for engineering of the morphological, structural and optical properties of cation-doped ZnO nanorods by using a low-temperature synthesis as an economical mass-production approach.

Optical effects induced by epitaxial tension in lead titanate

NASA Astrophysics Data System (ADS)

Dejneka, A.; Chvostova, D.; Pacherova, O.; Kocourek, T.; Jelinek, M.; Tyunina, M.

2018-01-01

Single-crystal-type epitaxial films of perovskite oxide ferroelectrics are attractive for integrated photonic applications because of the remarkable optical properties and effects in ferroelectrics. The properties of the films may be influenced by epitaxial strain arising from the film-substrate mismatch. Here, dramatic strain-induced changes of the absorption and refraction are experimentally detected by spectroscopic ellipsometry in epitaxial films of archetypical ferroelectric PbTiO3. Comparison of the properties of a tensile-strained film with those of reference films and crystals reveals that epitaxial tension produces blueshifts of the primary above-bandgap absorption peaks by 1 eV and a decrease in the refractive index by 0.5 in the transparent spectral range. The obtained quadratic electrooptic and effective elastooptic coefficients exceed the bulk values by orders of magnitude. The experimental observations prove that epitaxy is a powerful tool for engineering unprecedented optical properties that may enable future photonics innovations.

Universal behavior of surface-dangling bonds in hydrogen-terminated Si, Ge, and Si/Ge nanowires.

NASA Astrophysics Data System (ADS)

Nunes, Ricardo; Kagimura, Ricardo; Chacham, Hélio

2007-03-01

We report an ab initio study of the electronic properties of surface dangling bond (SDB) states in hydrogen-terminated Si, Ge, and Si/Ge nanowires with diameters between 1 and 2 nm. We find that the charge transition levels ɛ(+/-) of SDB states are deep in the bandgap for Si wires, and shallow (near the valence band edge) for Ge wires. In both Si and Ge wires, the SDB states are localized. We also find that the SDB ɛ(+/-) levels behave as a ``universal" energy reference level among Si, Ge, and Si/Ge wires within a precision of 0.1 eV. By computing the average bewteen the electron affinity and ionization energy in the atomi limit of several atoms from the III, IV and V columns, we conjecture that the universality is a periodic-table atomic property.

Multi-stage phononic crystal structure for anchor-loss reduction of thin-film piezoelectric-on-silicon microelectromechanical-system resonator

NASA Astrophysics Data System (ADS)

Bao, Fei-Hong; Bao, Lei-Lei; Li, Xin-Yi; Ammar Khan, Muhammad; Wu, Hua-Ye; Qin, Feng; Zhang, Ting; Zhang, Yi; Bao, Jing-Fu; Zhang, Xiao-Sheng

2018-06-01

Thin-film piezoelectric-on-silicon acoustic wave resonators are promising for the development of system-on-chip integrated circuits with micro/nano-engineered timing reference. However, in order to realize their large potentials, a further enhancement of the quality factor (Q) is required. In this study, a novel approach, based on a multi-stage phononic crystal (PnC) structure, was proposed to achieve an ultra-high Q. A systematical study revealed that the multi-stage PnC structure formed a frequency-selective band-gap to effectively prohibit the dissipation of acoustic waves through tethers, which significantly reduced the anchor loss, leading to an insertion-loss reduction and enhancement of Q. The maximum unloaded Q u of the fabricated resonators reached the value of ∼10,000 at 109.85 MHz, indicating an enhancement by 19.4 times.

The edge transient-current technique (E-TCT) with high energy hadron beam

NASA Astrophysics Data System (ADS)

Gorišek, Andrej; Cindro, Vladimir; Kramberger, Gregor; Mandić, Igor; Mikuž, Marko; Muškinja, Miha; Zavrtanik, Marko

2016-09-01

We propose a novel way to investigate the properties of silicon and CVD diamond detectors for High Energy Physics experiments complementary to the already well-established E-TCT technique using laser beam. In the proposed setup the beam of high energy hadrons (MIPs) is used instead of laser beam. MIPs incident on the detector in the direction parallel to the readout electrode plane and perpendicular to the edge of the detector. Such experiment could prove very useful to study CVD diamond detectors that are almost inaccessible for the E-TCT measurements with laser due to large band-gap as well as to verify and complement the E-TCT measurements of silicon. The method proposed is being tested at CERN in a beam of 120 GeV hadrons using a reference telescope with track resolution at the DUT of few μm. The preliminary results of the measurements are presented.

Small-bandgap polymer solar cells with unprecedented short-circuit current density and high fill factor.

PubMed

Choi, Hyosung; Ko, Seo-Jin; Kim, Taehyo; Morin, Pierre-Olivier; Walker, Bright; Lee, Byoung Hoon; Leclerc, Mario; Kim, Jin Young; Heeger, Alan J

2015-06-03

Small-bandgap polymer solar cells (PSCs) with a thick bulk heterojunction film of 340 nm exhibit high power conversion efficiencies of 9.40% resulting from high short-circuit current density (JSC ) of 20.07 mA cm(-2) and fill factor of 0.70. This remarkable efficiency is attributed to maximized light absorption by the thick active layer and minimized recombination by the optimized lateral and vertical morphology through the processing additive. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of γ-radiation on the optical properties of soda-lime-silicate glasses

NASA Astrophysics Data System (ADS)

Vanina, E. A.; Chibisova, M. A.; Chibisov, A. N.

2007-11-01

We have studied the effect of γ-radiation on the optical constants of soda-lime-silicate glasses. As the irradiation dose grows in the interval from 3.7 to 3.7 × 101 Gy, the refractive index n increases, while the optical bandgap width decreases (from 3.13 to 3.05 3.09 eV); upon irradiation to a dose of 3.7 × 102 Gy, the refractive index n drops, while the optical bandgap width E g increases up to 3.23 eV.

Waveguiding and bending modes in a plasma photonic crystal bandgap device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, B., E-mail: bwang17@stanford.edu; Cappelli, M. A.

2016-06-15

Waveguiding and bending modes are investigated in a fully tunable plasma photonic crystal. The plasma device actively controls the propagation of free space electromagnetic waves in the S to X band of the microwave spectrum. An array of discharge plasma tubes form a square crystal lattice exhibiting a well-defined bandgap, with individual active switching of the plasma elements to allow for waveguiding and bending modes to be generated dynamically. We show, through simulations and experiments, the existence of transverse electric (TE) mode waveguiding and bending modes.

Tunneling calculations for GaAs-Al(x)Ga(1-x) as graded band-gap sawtooth superlattices. Thesis

NASA Technical Reports Server (NTRS)

Forrest, Kathrine A.; Meijer, Paul H. E.

1991-01-01

Quantum mechanical tunneling calculations for sawtooth (linearly graded band-gap) and step-barrier AlGaAs superlattices were performed by means of a transfer matrix method, within the effective mass approximation. The transmission coefficient and tunneling current versus applied voltage were computed for several representative structures. Particular consideration was given to effective mass variations. The tunneling properties of step and sawtooth superlattices show some qualitative similarities. Both structures exhibit resonant tunneling, however, because they deform differently under applied fields, the J-V curves differ.

High bandgap III-V alloys for high efficiency optoelectronics

DOEpatents

Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

2017-01-10

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Side effects of the strain-doping approach to develop optical materials based on Ge

NASA Astrophysics Data System (ADS)

Escalante, Jose M.

2018-05-01

Following the strain-doping approach for development of Ge based optical gain material, we have studied the impact of doping and strain on the optical properties of Germanium. Emphasizing the importance of the bandgap narrowing effect due to doping on the emission wavelength, we have computed a strain-doping-energy maps, which provide the strain and doping windows that can be considered in order to achieve a specific value of the Γ bandgap. Finally, we discuss the polarization of the emitted light, and its dependence on strains.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steiner, Myles A.; Perl, E. E.; Geisz, J. F.

Here, we demonstrate that in solar cells with highly reflective back mirrors, the measured internal quantum efficiency exhibits a shift in bandgap relative to the measured external quantum efficiency. The shift arises from the fact that the measured reflectance at the front surface includes a superposition of waves reflecting from the front and back surfaces. We quantify the magnitude of the apparent shift and discuss the errors that can result in determination of quantities such as the photocurrent. Because of this apparent shift, it is important that the bandgap be determined from the external quantum efficiency.