Inverted bulk-heterojunction organic solar cells with the transfer-printed anodes and low-temperature-processed ultrathin buffer layers

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Sakai, Shota; Fukuda, Katsutoshi

2018-03-01

We studied the effects of a hole buffer layer [molybdenum oxide (MoO3) and natural copper oxide layer] and a low-temperature-processed electron buffer layer on the performance of inverted bulk-heterojunction organic solar cells in a device consisting of indium-tin oxide (ITO)/poly(ethylene imine) (PEI)/titanium oxide nanosheet (TiO-NS)/poly(3-hexylthiopnehe) (P3HT):phenyl-C61-butyric acid methylester (PCBM)/oxide/anode (Ag or Cu). The insertion of ultrathin TiO-NS (˜1 nm) and oxide hole buffer layers improved the open circuit voltage V OC, fill factor, and rectification properties owing to the effective hole blocking and electron transport properties of ultrathin TiO-NS, and to the enhanced work function difference between TiO-NS and the oxide hole buffer layer. The insertion of the TiO-NS contributed to the reduction in the potential barrier at the ITO/PEI/TiO-NS/active layer interface for electrons, and the insertion of the oxide hole buffer layer contributed to the reduction in the potential barrier for holes. The marked increase in the capacitance under positive biasing in the capacitance-voltage characteristics revealed that the combination of TiO-NS and MoO3 buffer layers contributes to the selective transport of electrons and holes, and blocks counter carriers at the active layer/oxide interface. The natural oxide layer of the copper electrode also acts as a hole buffer layer owing to the increase in the work function of the Cu surface in the inverted cells. The performance of the cell with evaporated MoO3 and Cu layers that were transfer-printed to the active layer was almost comparable to that of the cell with MoO3 and Ag layers directly evaporated onto the active layer. We also demonstrated comparable device performance in the cell with all-printed MoO3 and low-temperature-processed silver nanoparticles as an anode.

Origin of colossal dielectric response of CaCu3Ti4O12 studied by using CaTiO3/CaCu3Ti4O12/CaTiO3 multilayer thin films

NASA Astrophysics Data System (ADS)

Mitsugi, Masakazu; Asanuma, Shutaro; Uesu, Yoshiaki; Fukunaga, Mamoru; Kobayashi, Wataru; Terasaki, Ichiro

2007-06-01

To elucidate the origin of the colossal dielectric response (CDR) of CaCu3Ti4O12 (CCTO), multilayer thin films of CCTO interposed in insulating CaTiO3 (CTO) were synthesized using a pulsed laser deposition technique. The capacitance C of CTO/CCTO/CTO films with different layer thicknesses is measured. After removing the capacitance of CTO by extrapolating C to zero CTO thickness, the real part of dielectric constant of CCTO is estimated to be 329-435, which is much smaller than the reported value for CCTO thin films. This fact indicates that the CDR of CCTO is extrinsic and originates from an internal barrier layer capacitor.

Graphite based Schottky diodes formed semiconducting substrates

NASA Astrophysics Data System (ADS)

Schumann, Todd; Tongay, Sefaattin; Hebard, Arthur

2010-03-01

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). The fabrication can be as easy as allowing a dab of graphite paint to air dry on any one of the investigated semiconductors. Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

Quantum Effects on the Capacitance of Graphene-Based Electrodes

DOE PAGES

Zhan, Cheng; Neal, Justin; Wu, Jianzhong; ...

2015-09-08

We recently measured quantum capacitance for electric double layers (EDL) at electrolyte/graphene interfaces. However, the importance of quantum capacitance in realistic carbon electrodes is not clear. Toward understanding that from a theoretical perspective, here we studied the quantum capacitance and total capacitance of graphene electrodes as a function of the number of graphene layers. The quantum capacitance was obtained from electronic density functional theory based on fixed band approximation with an implicit solvation model, while the EDL capacitances were from classical density functional theory. We found that quantum capacitance plays a dominant role in total capacitance of the single-layer graphenemore » both in aqueous and ionic-liquid electrolytes but the contribution decreases as the number of graphene layers increases. Moreover, the total integral capacitance roughly levels off and is dominated by the EDL capacitance beyond about four graphene layers. Finally, because many porous carbons have nanopores with stacked graphene layers at the surface, this research provides a good estimate of the effect of quantum capacitance on their electrochemical performance.« less

Capacitance of carbon-based electrical double-layer capacitors.

PubMed

Ji, Hengxing; Zhao, Xin; Qiao, Zhenhua; Jung, Jeil; Zhu, Yanwu; Lu, Yalin; Zhang, Li Li; MacDonald, Allan H; Ruoff, Rodney S

2014-01-01

Experimental electrical double-layer capacitances of porous carbon electrodes fall below ideal values, thus limiting the practical energy densities of carbon-based electrical double-layer capacitors. Here we investigate the origin of this behaviour by measuring the electrical double-layer capacitance in one to five-layer graphene. We find that the capacitances are suppressed near neutrality, and are anomalously enhanced for thicknesses below a few layers. We attribute the first effect to quantum capacitance effects near the point of zero charge, and the second to correlations between electrons in the graphene sheet and ions in the electrolyte. The large capacitance values imply gravimetric energy storage densities in the single-layer graphene limit that are comparable to those of batteries. We anticipate that these results shed light on developing new theoretical models in understanding the electrical double-layer capacitance of carbon electrodes, and on opening up new strategies for improving the energy density of carbon-based capacitors.

Contribution of Dielectric Screening to the Total Capacitance of Few-Layer Graphene Electrodes.

PubMed

Zhan, Cheng; Jiang, De-en

2016-03-03

We apply joint density functional theory (JDFT), which treats the electrode/electrolyte interface self-consistently, to an electric double-layer capacitor (EDLC) based on few-layer graphene electrodes. The JDFT approach allows us to quantify a third contribution to the total capacitance beyond quantum capacitance (CQ) and EDL capacitance (CEDL). This contribution arises from the dielectric screening of the electric field by the surface of the few-layer graphene electrode, and we therefore term it the dielectric capacitance (CDielec). We find that CDielec becomes significant in affecting the total capacitance when the number of graphene layers in the electrode is more than three. Our investigation sheds new light on the significance of the electrode dielectric screening on the capacitance of few-layer graphene electrodes.

Contribution of dielectric screening to the total capacitance of few-layer graphene electrodes

DOE PAGES

Zhan, Cheng; Jiang, De-en

2016-02-17

We apply joint density functional theory (JDFT), which treats the electrode/electrolyte interface self-consistently, to an electric double-layer capacitor (EDLC) based on few-layer graphene electrodes. The JDFT approach allows us to quantify a third contribution to the total capacitance beyond quantum capacitance (C Q) and EDL capacitance (C EDL). This contribution arises from the dielectric screening of the electric field by the surface of the few-layer graphene electrode, and we therefore term it the dielectric capacitance (C Dielec). We find that C Dielec becomes significant in affecting the total capacitance when the number of graphene layers in the electrode is moremore » than three. In conclusion, our investigation sheds new light on the significance of the electrode dielectric screening on the capacitance of few-layer graphene electrodes.« less

Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3 dielectric and imprinted electrodes

NASA Astrophysics Data System (ADS)

Hourdakis, Emmanouel; Nassiopoulou, Androula G.

2017-07-01

Metal-Insulator-Metal (MIM) capacitors with a high capacitance density and low non-linearity coefficient using a single-layer dielectric of barrier-type anodic alumina (Al2O3) and an imprinted bottom Al electrode are presented. Imprinting of the bottom electrode aimed at increasing the capacitor effective surface area by creating a three-dimensional MIM capacitor architecture. The bottom Al electrode was only partly nanopatterned so as to ensure low series resistance of the MIM capacitor. With a 3 nm thick anodic Al2O3 dielectric, the capacitor with the imprinted electrode showed a 280% increase in capacitance density compared to the flat electrode capacitor, reaching a value of 20.5 fF/μm2. On the other hand, with a 30 nm thick anodic Al2O3 layer, the capacitance density was 7.9 fF/μm2 and the non-linearity coefficient was as low as 196 ppm/V2. These values are very close to reaching all requirements of the last International Technology Roadmap for Semiconductors for MIM capacitors [ITRS, http://www.itrs2.net/2013-itrs.html for ITRS Roadmap (2013)], and they are achieved by a single-layer dielectric instead of the complicated dielectric stacks of the literature. The obtained results constitute a real progress compared to previously reported results by our group for MIM capacitors using imprinted electrodes.

Capacitive Energy Extraction by Few-Layer Graphene Electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lian, Cheng; Zhan, Cheng; Jiang, De-en

Capacitive double-layer expansion is a promising technology to harvest energy arising from the salinity difference between freshwater and seawater. Its optimal performance requires a careful selection of the operation potentials and electrode materials. While carbonaceous materials such as graphene and various forms of activated carbons are routinely used as the electrodes, there is little knowledge on how the quantum capacitance and the electric double-layer (EDL) capacitance, which are on the same order of magnitude, affect the capacitive performance. Toward understanding that from a theoretical perspective, here we study the capacitive energy extraction with graphene electrodes as a function of themore » number of graphene layers. The classical density functional theory is joined with the electronic density functional theory to obtain the EDL and the quantum capacitance, respectively. The theoretical results show that the quantum capacitance contribution plays a dominant role in extracting energy using the single-layer graphene, but its effect diminishes as the number of graphene layers increases. The overall extracted energy is dominated by the EDL contribution beyond about four graphene layers. Electrodes with more graphene layers are able to extract more energy at low charging potential. Here, because many porous carbons have nanopores with stacked graphene layers, our theoretical predictions are useful to identify optimal operation parameters for capacitive energy extraction with porous electrodes of different wall thickness.« less

Capacitive Energy Extraction by Few-Layer Graphene Electrodes

DOE PAGES

Lian, Cheng; Zhan, Cheng; Jiang, De-en; ...

2017-06-09

Capacitive double-layer expansion is a promising technology to harvest energy arising from the salinity difference between freshwater and seawater. Its optimal performance requires a careful selection of the operation potentials and electrode materials. While carbonaceous materials such as graphene and various forms of activated carbons are routinely used as the electrodes, there is little knowledge on how the quantum capacitance and the electric double-layer (EDL) capacitance, which are on the same order of magnitude, affect the capacitive performance. Toward understanding that from a theoretical perspective, here we study the capacitive energy extraction with graphene electrodes as a function of themore » number of graphene layers. The classical density functional theory is joined with the electronic density functional theory to obtain the EDL and the quantum capacitance, respectively. The theoretical results show that the quantum capacitance contribution plays a dominant role in extracting energy using the single-layer graphene, but its effect diminishes as the number of graphene layers increases. The overall extracted energy is dominated by the EDL contribution beyond about four graphene layers. Electrodes with more graphene layers are able to extract more energy at low charging potential. Here, because many porous carbons have nanopores with stacked graphene layers, our theoretical predictions are useful to identify optimal operation parameters for capacitive energy extraction with porous electrodes of different wall thickness.« less

Capacitance-Voltage (CV) Measurement of Type-2 Superlattice Photodiodes

DTIC Science & Technology

2016-01-05

interlayer tunneling of carriers without the requirement of an external bias or additional doping. The resulting energy gap depends upon the layer...design which involves the interaction of electrons and holes via tunneling through adjacent barriers. By adjusting the Conduction Miniband Valance...design the effective masses can be increased further to reduce the tunneling current, which is a major component of the dark current in MCT detectors

Steep-slope hysteresis-free negative capacitance MoS2 transistors

NASA Astrophysics Data System (ADS)

Si, Mengwei; Su, Chun-Jung; Jiang, Chunsheng; Conrad, Nathan J.; Zhou, Hong; Maize, Kerry D.; Qiu, Gang; Wu, Chien-Ting; Shakouri, Ali; Alam, Muhammad A.; Ye, Peide D.

2018-01-01

The so-called Boltzmann tyranny defines the fundamental thermionic limit of the subthreshold slope of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV dec-1 at room temperature and therefore precludes lowering of the supply voltage and overall power consumption1,2. Adding a ferroelectric negative capacitor to the gate stack of a MOSFET may offer a promising solution to bypassing this fundamental barrier3. Meanwhile, two-dimensional semiconductors such as atomically thin transition-metal dichalcogenides, due to their low dielectric constant and ease of integration into a junctionless transistor topology, offer enhanced electrostatic control of the channel4-12. Here, we combine these two advantages and demonstrate a molybdenum disulfide (MoS2) two-dimensional steep-slope transistor with a ferroelectric hafnium zirconium oxide layer in the gate dielectric stack. This device exhibits excellent performance in both on and off states, with a maximum drain current of 510 μA μm-1 and a sub-thermionic subthreshold slope, and is essentially hysteresis-free. Negative differential resistance was observed at room temperature in the MoS2 negative-capacitance FETs as the result of negative capacitance due to the negative drain-induced barrier lowering. A high on-current-induced self-heating effect was also observed and studied.

Surface States in the AlxGa1-xN Barrier in AlxGa1-xN/GaN Heterostructures

NASA Astrophysics Data System (ADS)

Liu, Jie; Shen, Bo; Wang, Mao-Jun; Zhou, Yu-Gang; Chen, Dun-Jun; Zhang, Rong; Shi, Yi; Zheng, You-Dou

2004-01-01

Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22 Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 1012 cm-2eV-1, and the time constant is about 1 mus. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passivate the surface states effectively.

Giant dielectric constant in CaCu3Ti4O12 nanoceramics

NASA Astrophysics Data System (ADS)

Ahmad, Mohamad M.

2013-06-01

Nanoceramics of CaCu3Ti4O12 (CCTO) were synthesized by mechanosynthesis and spark plasma sintering with grain size of 150-200 nm. Giant dielectric constant properties are observed in the CCTO nanoceramics due to internal barrier layer capacitance (IBLC) effects. Impedance spectroscopy data suggest that the presence of resistive grain boundaries in addition to resistive domain boundaries is the origin of the IBLCs in CCTO nanoceramics.

Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation

NASA Astrophysics Data System (ADS)

Kim, Tae-Soo; Lim, Seung-Young; Park, Yong-Keun; Jung, Gunwoo; Song, Jung-Hoon; Cha, Ho-Young; Han, Sang-Woo

2018-06-01

We investigated the distributions and the energy levels of defects in SiO2/AlGaN/GaN highelectron-mobility transistors (HEMTs) by using frequency-dependent ( F- D) capacitance-voltage ( C- V) measurements with resonant optical excitation. A Schottky barrier (SB) and a metal-oxidesemiconductor (MOS) HEMT were prepared to compare the effects of defects in their respective layers. We also investigated the effects of those layers on the threshold voltage ( V th ). A drastic voltage shift in the C- V curve at higher frequencies was caused by the large number of defect levels in the SiO2/GaN interface. A significant shift in V th with additional light illumination was observed due to a charging of the defect states in the SiO2/GaN interface. The voltage shifts were attributed to the detrapping of defect states at the SiO2/GaN interface.

Electrosorption capacitance of nanostructured carbon-based materials.

PubMed

Hou, Chia-Hung; Liang, Chengdu; Yiacoumi, Sotira; Dai, Sheng; Tsouris, Costas

2006-10-01

The fundamental mechanism of electrosorption of ions developing a double layer inside nanopores was studied via a combination of experimental and theoretical studies. A novel graphitized-carbon monolithic material has proven to be a good electrical double-layer capacitor that can be applied in the separation of ions from aqueous solutions. An extended electrical double-layer model indicated that the pore size distribution plays a key role in determining the double-layer capacitance in an electrosorption process. Because of the occurrence of double-layer overlapping in narrow pores, mesopores and micropores make significantly different contributions to the double-layer capacitance. Mesopores show good electrochemical accessibility. Micropores present a slow mass transfer of ions and a considerable loss of double-layer capacitance, associated with a shallow potential distribution inside pores. The formation of the diffuse layer inside the micropores determines the magnitude of the double-layer capacitance at low electrolyte concentrations and at conditions close to the point of zero charge of the material. The effect of the double-layer overlapping on the electrosorption capacitance can be reduced by increasing the pore size, electrolyte concentration, and applied potential. The results are relevant to water deionization.

Central role of TiO2 anatase grain boundaries on resistivity of CaCu3Ti4O12-based materials probed by Raman spectroscopy

NASA Astrophysics Data System (ADS)

De Almeida-Didry, Sonia; Autret, Cécile; Honstettre, Christophe; Lucas, Anthony; Zaghrioui, Mustapha; Pacreau, François; Gervais, François

2016-11-01

This study focuses on characterization and control of grain boundaries to enhance the properties of CaCu3Ti4O12 (CCTO) ceramics capacitors for industrial applications. A novel factor deals with TiO2 anatase revealed by Raman scattering in grain boundaries, found as a dominant parameter of largest sample resistivity, consistent with higher grain boundary resistivity and higher breakdown voltage. Four selected samples of CCTO-based compositions showing very different properties in terms of permittivity ranging from 1000 to 684 000 measured at 1 kHz, capacitance of grain boundaries ranging from 8 10-10 to 4.5 10-7 F cm-1, grain boundary resistivity ranging from 193 to 30,000,000 Ω cm and sample resistivity extending from 450 to 1011 Ω cm. The relationship between permittivity weighted by grain size and capacitance of grain boundaries confirms the internal barrier layer capacitance model over 5 orders of magnitude.

Ionizing and Non-ionizing Radiation Effects in Thin Layer Hexagonal Boron Nitride

DTIC Science & Technology

2015-03-01

capacitance-voltage measurements indicating Frenkel-Poole (FP) and Fowler-Nordheim tunneling (FNT) are the primary current mechanisms before and after...linear FNT model and a 0.013 eV increase in the barrier potential for the FP model. There was a decrease of 0.19 eV in the tunneling potential for the...non-linear FNT model. Defects generated by the neutron damage increased currents by increasing trap assisted tunneling (TAT). v

Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

PubMed

Choi, Yu Jin; Lim, Hajin; Lee, Suhyeong; Suh, Sungin; Kim, Joon Rae; Jung, Hyung-Suk; Park, Sanghyun; Lee, Jong Ho; Kim, Seong Gyeong; Hwang, Cheol Seong; Kim, HyeongJoon

2014-05-28

The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3 interfacial passivation layers, and SiO2 capping layers, were examined. La-silicate thin films were deposited using alternating injections of the La[N{Si(CH3)3}2]3 precursor with O3 as the La and O precursors, respectively, at a substrate temperature of 310 °C. The Si concentration in the La-silicate films was further controlled by adding ALD cycles of SiO2. For comparison, La2O3 films were also grown using [La((i)PrCp)3] and O3 as the La precursor and oxygen source, respectively, at the identical substrate temperature. The capacitance-voltage (C-V) hysteresis decreased with an increasing Si concentration in the La-silicate films, although the films showed a slight increase in the capacitance equivalent oxide thickness. The adoption of Al2O3 at the interface as a passivation layer resulted in lower C-V hysteresis and a low leakage current density. The C-V hysteresis voltages of the La-silicate films with Al2O3 passivation and SiO2 capping layers was significantly decreased to ∼0.1 V, whereas the single layer La-silicate film showed a hysteresis voltage as large as ∼1.0 V.

Synthesis and Characterization of Self-Standing and Highly Flexible δ-MnO2@CNTs/CNTs Composite Films for Direct Use of Supercapacitor Electrodes.

PubMed

Wu, Peng; Cheng, Shuang; Yang, Lufeng; Lin, Zhiqiang; Gui, Xuchun; Ou, Xing; Zhou, Jun; Yao, Minghai; Wang, Mengkun; Zhu, Yuanyuan; Liu, Meilin

2016-09-14

Self-standing and flexible films worked as pseudocapacitor electrodes have been fabricated via a simple vacuum-filtration procedure to stack δ-MnO2@carbon nanotubes (CNTs) composite layer and pure CNT layer one by one with CNT layers ended. The lightweight CNTs layers served as both current collector and supporter, while the MnO2@CNTs composite layers with birnessite-type MnO2 worked as active layer and made the main contribution to the capacitance. At a low discharge current of 0.2 A g(-1), the layered films displayed a high areal capacitance of 0.293 F cm(-2) with a mass of 1.97 mg cm(-2) (specific capacitance of 149 F g(-1)) and thickness of only 16.5 μm, and hence an volumetric capacitance of about 177.5 F cm(-3). Moreover, the films also exhibited a good rate capability (only about 15% fading for the capacitance when the discharge current increased to 5 A g(-1) from 0.2 A g(-1)), outstanding cycling stability (about 90% of the initial capacitance was remained after 5,000 cycles) and high flexibility (almost no performance change when bended to different angles). In addition, the capacitance of the films increased proportionally with the stacked layers and the geometry area. E.g., when the stacked layers were three times many with a mass of 6.18 mg cm(-2), the areal capacitance of the films was increased to 0.764 F cm(-2) at 0.5 A g(-1), indicating a high electronic conductivity. It is not overstated to say that the flexible and lightweight layered films emerged high potential for future practical applications as supercapacitor electrodes.

Capacitance of the Double Layer Formed at the Metal/Ionic-Conductor Interface: How Large Can It Be?

NASA Astrophysics Data System (ADS)

Skinner, Brian; Loth, M. S.; Shklovskii, B. I.

2010-03-01

The capacitance of the double layer formed at a metal/ionic-conductor interface can be remarkably large, so that the apparent width of the double layer is as small as 0.3 Å. Mean-field theories fail to explain such large capacitance. We propose an alternate theory of the ionic double layer which allows for the binding of discrete ions to their image charges in the metal. We show that at small voltages the capacitance of the double layer is limited only by the weak dipole-dipole repulsion between bound ions, and is therefore very large. At large voltages the depletion of bound ions from one of the capacitor electrodes triggers a collapse of the capacitance to the mean-field value.

In situ synthesized heteropoly acid/polyaniline/graphene nanocomposites to simultaneously boost both double layer- and pseudo-capacitance for supercapacitors.

PubMed

Cui, Zhiming; Guo, Chun Xian; Yuan, Weiyong; Li, Chang Ming

2012-10-05

It is challenging to simultaneously increase double layer- and pseudo-capacitance for supercapacitors. Phosphomolybdic acid/polyaniline/graphene nanocomposites (PMo(12)-PANI/GS) were prepared by using PMo(12) as a bifunctional reagent for not only well dispersing graphene for high electrochemical double layer capacitance but also in situ chemically polymerizing aniline for high pseudocapacitance, resulting in a specific capacitance of 587 F g(-1), which is ~1.5 and 6 times higher than that of PANI/GS (392 F g(-1)) and GS (103 F g(-1)), respectively. The nanocomposites also exhibit good reversibility and stability. Other kinds of heteropolyacids such as molybdovanadophosphoric acids (PMo(12-x)V(x), x = 1, 2 and 3) were also used to prepare PMo(12-x)V(x)-PANI/GS nanocomposites, also showing enhanced double layer- and pseudo-capacitance. This further proves the proposed concept to simultaneously boost both double layer- and pseudo-capacitance and demonstrates that it could be a universal approach to significantly improve the capacitance for supercapacitors.

N-doped structures and surface functional groups of reduced graphene oxide and their effect on the electrochemical performance of supercapacitor with organic electrolyte

NASA Astrophysics Data System (ADS)

Li, Shin-Ming; Yang, Shin-Yi; Wang, Yu-Sheng; Tsai, Hsiu-Ping; Tien, Hsi-Wen; Hsiao, Sheng-Tsung; Liao, Wei-Hao; Chang, Chien-Liang; Ma, Chen-Chi M.; Hu, Chi-Chang

2015-03-01

Nitrogen-doped reduced graphene oxide (N-rGO) has been synthesized using a simple, efficient method combining instant thermal exfoliation and covalent bond transformation from a melamine-graphene oxide mixture. The capacitive performance of N-rGO has been tested in both aqueous (0.5 M H2SO4) and organic (1 M tetraethyl-ammonium tetrafluoroborate (TEABF4) in propylene carbonate (PC)) electrolytes, which are compared with those obtained from thermal-reduced graphene oxide (T-rGO) and chemical-reduced graphene oxide (C-rGO). The contributions of scan-rate-independent (double-layer-like) and scan-rate-dependent (pseudo-capacitance-like) capacitance of all reduced graphene oxides in both aqueous and organic electrolytes were evaluated and compared. The results show that relatively rich oxygen-containing functional groups on C-rGO form significant ion-diffusion barrier, resulting in worse electrochemical responses in organic electrolyte. By contrast, the N-doped structures, large surface area, and lower density of oxygen-containing groups make N-rGO become a promising electrode material for organic electric double-layer capacitors (EDLCs). The capacitance rate-retention of N-rGO reaches 71.1% in 1 M TEABF4/PC electrolyte when the scan rate is elevated to 200 mVs-1, demonstrating that N-rGO improves the relatively low-power drawback of EDLCs in organic electrolytes. The specific energy and power of a symmetric N-rGO cell in the organic electrolyte reach 25 Wh kg-1 and 10 kW kg-1, respectively.

Modeling and Characterization of Capacitive Elements With Tissue as Dielectric Material for Wireless Powering of Neural Implants.

PubMed

Erfani, Reza; Marefat, Fatemeh; Sodagar, Amir M; Mohseni, Pedram

2018-05-01

This paper reports on the modeling and characterization of capacitive elements with tissue as the dielectric material, representing the core building block of a capacitive link for wireless power transfer to neural implants. Each capacitive element consists of two parallel plates that are aligned around the tissue layer and incorporate a grounded, guarded, capacitive pad to mitigate the adverse effect of stray capacitances and shield the plates from external interfering electric fields. The plates are also coated with a biocompatible, insulating, coating layer on the inner side of each plate in contact with the tissue. A comprehensive circuit model is presented that accounts for the effect of the coating layers and is validated by measurements of the equivalent capacitance as well as impedance magnitude/phase of the parallel plates over a wide frequency range of 1 kHz-10 MHz. Using insulating coating layers of Parylene-C at a thickness of and Parylene-N at a thickness of deposited on two sets of parallel plates with different sizes and shapes of the guarded pad, our modeling and characterization results accurately capture the effect of the thickness and electrical properties of the coating layers on the behavior of the capacitive elements over frequency and with different tissues.

Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering

NASA Astrophysics Data System (ADS)

Singh, Rohit; Arif Khan, Md; Sharma, Pankaj; Than Htay, Myo; Kranti, Abhinav; Mukherjee, Shaibal

2018-04-01

This work reports on the formation of high-density (~1013-1014 cm-2) two-dimensional electron gas (2DEG) in ZnO-based heterostructures, grown by a dual ion beam sputtering system. We probe 2DEG in bilayer MgZnO/ZnO and capped ZnO/MgZnO/ZnO heterostructures utilizing MgZnO barrier layers with varying thickness and Mg content. The effect of the ZnO cap layer thickness on the ZnO/MgZnO/ZnO heterostructure is also studied. Hall measurements demonstrate that the addition of a 5 nm ZnO cap layer results in an enhancement of the 2DEG density by about 1.5 times compared to 1.11 × 1014 cm-2 for the uncapped bilayer heterostructure with the same 30 nm barrier thickness and 30 at.% Mg composition in the barrier layer. From the low-temperature Hall measurement, the sheet carrier concentration and mobility are both found to be independent of the temperature. The capacitance-voltage measurement suggests a carrier density of ~1020 cm-3, confined in 2DEG at the MgZnO/ZnO heterointerface. The results presented are significant for the optimization of 2DEG for the eventual realization of cost-effective and large-area MgZnO/ZnO-based high-electron-mobility transistors.

Hysteretic Characteristics of Pulsed Laser Deposited 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3/ZnO Bilayers.

PubMed

Silva, J P B; Wang, J; Koster, G; Rijnders, G; Negrea, R F; Ghica, C; Sekhar, K C; Moreira, J Agostinho; Gomes, M J M

2018-05-02

In the present work, we study the hysteretic behavior in the electric-field-dependent capacitance and the current characteristics of 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 (BCZT)/ZnO bilayers deposited on 0.7 wt % Nb-doped (001)-SrTiO 3 (Nb:STO) substrates in a metal-ferroelectric-semiconductor (MFS) configuration. The X-ray diffraction measurements show that the BCZT and ZnO layers are highly oriented along the c-axis and have a single perovskite and wurtzite phases, respectively, whereas high-resolution transmission electron microscopy revealed very sharp Nb:STO/BCZT/ZnO interfaces. The capacitance-electric field ( C- E) characteristics of the bilayers exhibit a memory window of 47 kV/cm and a capacitance decrease of 22%, at a negative bias. The later result is explained by the formation of a depletion region in the ZnO layer. Moreover, an unusual resistive switching (RS) behavior is observed in the BCZT films, where the RS ratio can be 500 times enhanced in the BCZT/ZnO bilayers. The RS enhancement can be understood by the barrier potential profile modulation at the depletion region, in the BCZT/ZnO junction, via ferroelectric polarization switching of the BCZT layer. This work builds a bridge between the hysteretic behavior observed either in the C- E and current-electric field characteristics on a MFS structure.

Design and electrical performance of CdS/Sb2Te3 tunneling heterojunction devices

NASA Astrophysics Data System (ADS)

Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.

2018-02-01

In the current work, a tunneling barrier device made of 20 nm thick Sb2Te3 layer deposited onto 500 nm thick CdS is designed and characterized. The design included a Yb metallic substrate and Ag point contact of area of 10-3 cm2. The heterojunction properties are investigated by means of x-ray diffraction and impedance spectroscopy techniques. It is observed that the coating of the Sb2Te3 onto the surface of CdS causes a further deformation to the already strained structure of hexagonal CdS. The designed energy band diagram for the CdS/Sb2Te3 suggests a straddling type of heterojunction with an estimated conduction and valence band offsets of 0.35 and 1.74 eV, respectively. In addition, the analysis of the capacitance-voltage characteristic curve revealed a depletion region width of 14 nm. On the other hand, the capacitance and conductivity spectra which are analyzed in the frequency domain of 0.001-1.80 GHz indicated that the conduction in the device is dominated by the quantum mechanical tunneling in the region below 0.26 GHz and by the correlated barrier hopping in the remaining region. While the modeling of the conductivity spectra allowed investigation of the density of states near Fermi levels and an average scattering time of 1.0 ns, the capacitance spectra exhibited resonance at 0.26 GHz followed by negative differential capacitance effect in the frequency domain of 0.26-1.8 GHz. Furthermore, the evaluation of the impedance and reflection coefficient spectra indicated the usability of these devices as wide range low pass filters with ideal values of voltage standing wave ratios.

UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure.

PubMed

Bian, Xiaolei; Jin, Hao; Wang, Xiaozhi; Dong, Shurong; Chen, Guohao; Luo, J K; Deen, M Jamal; Qi, Bensheng

2015-03-16

A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV sensor has a 50 nm thick n-ZnO semiconductor layer with a carrier concentration of ~ 10(17) cm(-3). A large frequency downshift is observed when UV light irradiates the FBAR. With 365 nm UV light of intensity 1.7 mW/cm(2), the FBAR with n-ZnO/Au Schottky diode has 250 kHz frequency downshift, much larger than the 60 kHz frequency downshift in a conventional FBAR without the n-ZnO layer. The shift in the new FBAR's resonant frequency is due to the junction formed between Au and n-ZnO semiconductor and its properties changes with UV light. The experimental results are in agreement with the theoretical analysis using an equivalent circuit model of the new FBAR structure.

Negative Capacitance in BaTiO3/BiFeO3 Bilayer Capacitors.

PubMed

Hou, Ya-Fei; Li, Wei-Li; Zhang, Tian-Dong; Yu, Yang; Han, Ren-Lu; Fei, Wei-Dong

2016-08-31

Negative capacitances provide an approach to reduce heat generations in field-effect transistors during the switch processes, which contributes to further miniaturization of the conventional integrated circuits. Although there are many studies about negative capacitances using ferroelectric materials, the direct observation of stable ferroelectric negative capacitances has rarely been reported. Here, we put forward a dc bias assistant model in bilayer capacitors, where one ferroelectric layer with large dielectric constant and the other ferroelectric layer with small dielectric constant are needed. Negative capacitances can be obtained when external dc bias electric fields are larger than a critical value. Based on the model, BaTiO3/BiFeO3 bilayer capacitors are chosen as study objects, and negative capacitances are observed directly. Additionally, the upward self-polarization effect in the ferroelectric layer reduces the critical electric field, which may provide a method for realizing zero and/or small dc bias assistant negative capacitances.

Maximizing the value of gate capacitance in field-effect devices using an organic interface layer

NASA Astrophysics Data System (ADS)

Kwok, H. L.

2015-12-01

Past research has confirmed the existence of negative capacitance in organics such as tris (8-Hydroxyquinoline) Aluminum (Alq3). This work explored using such an organic interface layer to enhance the channel voltage in the field-effect transistor (FET) thereby lowering the sub-threshold swing. In particular, if the values of the positive and negative gate capacitances are approximately equal, the composite negative capacitance will increase by orders of magnitude. One concern is the upper frequency limit (∼100 Hz) over which negative capacitance has been observed. Nonetheless, this frequency limit can be raised to kHz when the organic layer is subjected to a DC bias.

Numerical investigation of dielectric barrier discharges

NASA Astrophysics Data System (ADS)

Li, Jing

1997-12-01

A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in further understanding the ozone generation and pollution control process in a dielectric barrier discharge.

Resistive and Capacitive Memory Effects in Oxide Insulator/ Oxide Conductor Hetero-Structures

NASA Astrophysics Data System (ADS)

Meyer, Rene; Miao, Maosheng; Wu, Jian; Chevallier, Christophe

2013-03-01

We report resistive and capacitive memory effects observed in oxide insulator/ oxide conductor hetero-structures. Electronic transport properties of Pt/ZrO2/PCMO/Pt structures with ZrO2 thicknesses ranging from 20A to 40A are studied before and after applying short voltage pulses of positive and negative polarity for set and reset operation. As processed devices display a non-linear IV characteristic which we attribute to trap assisted tunneling through the ZrO2 tunnel oxide. Current scaling with electrode area and tunnel oxide thickness confirms uniform conduction. The set/reset operation cause an up/down shift of the IV characteristic indicating that the conduction mechanism of both states is still dominated by tunneling. A change in the resistance is associated with a capacitance change of the device. An exponential relation between program voltages and set times is found. A model based on electric field mediated non-linear transport of oxygen ions across the ZrO2/PCMO interface is proposed. The change in the tunnel current is explained by ionic charge transfer between tunnel oxide and conductive metal oxide changing both tunnel barrier height and PCMO conductivity. DFT techniques are employed to explain the conductivity change in the PCMO interfacial layer observed through capacitance measurements.

Analysis of the Temperature Dependence of the Capacitance-Voltage and Conductance-Voltage Characteristics of Au/TiO2(rutile)/ n-Si Structures

NASA Astrophysics Data System (ADS)

KInacI, BarIş; Özçelik, Süleyman

2013-06-01

The capacitance-voltage-temperature ( C- V- T) and the conductance/angular frequency-voltage-temperature ( G/ω- V- T) characteristics of Au/TiO2(rutile)/ n-Si Schottky barrier diodes (SBDs) were investigated over the temperature range from 200 K to 380 K by considering the series resistance effect. Titanium dioxide (TiO2) was deposited on n-type silicon (Si) substrate using a direct-current (DC) magnetron sputtering system at 200°C. To improve the crystal quality, the deposited film was annealed at 900°C to promote a phase transition from the amorphous to rutile phase. The C -2 versus V plots gave a straight line in the reverse-bias region. The main electrical parameters, such as the doping concentration ( N D), Fermi energy level ( E F), depletion layer width ( W D), barrier height ( ф CV), and series resistance ( R S), of Au/TiO2(rutile)/ n-Si SBDs were calculated from the C- V- T and the G/ω- V- T characteristics. The obtained results show that ф CV, R S, and W D values decrease, while E F and N D values increase, with increasing temperature.

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

NASA Astrophysics Data System (ADS)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low dielectric loss (0.007), and low leakage current (<2×10-8 A/cm2 at 100 kV/cm) were achieved for BST thin film capacitors with Cu-based electrodes.

Electric double-layer capacitance between an ionic liquid and few-layer graphene.

PubMed

Uesugi, Eri; Goto, Hidenori; Eguchi, Ritsuko; Fujiwara, Akihiko; Kubozono, Yoshihiro

2013-01-01

Ionic-liquid gates have a high carrier density due to their atomically thin electric double layer (EDL) and extremely large geometrical capacitance Cg. However, a high carrier density in graphene has not been achieved even with ionic-liquid gates because the EDL capacitance CEDL between the ionic liquid and graphene involves the series connection of Cg and the quantum capacitance Cq, which is proportional to the density of states. We investigated the variables that determine CEDL at the molecular level by varying the number of graphene layers n and thereby optimising Cq. The CEDL value is governed by Cq at n < 4, and by Cg at n > 4. This transition with n indicates a composite nature for CEDL. Our finding clarifies a universal principle that determines capacitance on a microscopic scale, and provides nanotechnological perspectives on charge accumulation and energy storage using an ultimately thin capacitor.

Electric double-layer capacitance between an ionic liquid and few-layer graphene

PubMed Central

Uesugi, Eri; Goto, Hidenori; Eguchi, Ritsuko; Fujiwara, Akihiko; Kubozono, Yoshihiro

2013-01-01

Ionic-liquid gates have a high carrier density due to their atomically thin electric double layer (EDL) and extremely large geometrical capacitance Cg. However, a high carrier density in graphene has not been achieved even with ionic-liquid gates because the EDL capacitance CEDL between the ionic liquid and graphene involves the series connection of Cg and the quantum capacitance Cq, which is proportional to the density of states. We investigated the variables that determine CEDL at the molecular level by varying the number of graphene layers n and thereby optimising Cq. The CEDL value is governed by Cq at n < 4, and by Cg at n > 4. This transition with n indicates a composite nature for CEDL. Our finding clarifies a universal principle that determines capacitance on a microscopic scale, and provides nanotechnological perspectives on charge accumulation and energy storage using an ultimately thin capacitor. PMID:23549208

Fabrication and Characteristics of High Capacitance Al Thin Films Capacitor Using a Polymer Inhibitor Bath in Electroless Plating Process.

PubMed

Cho, Young-Lae; Lee, Jung-Woo; Lee, Chang-Hyoung; Choi, Hyung-Seon; Kim, Sung-Su; Song, Young Il; Park, Chan; Suh, Su-Jeong

2015-10-01

An aluminum (Al) thin film capacitor was fabricated for a high capacitance capacitor using electrochemical etching, barrier-type anodizing, and electroless Ni-P plating. In this study, we focused on the bottom-up filling of Ni-P electrodes on Al2O3/Al with etched tunnels. The Al tunnel pits were irregularly distributed on the Al foil, diameters were in the range of about 0.5~1 μm, the depth of the tunnel pits was approximately 35~40 μm, and the complex structure was made full filled hard metal. To control the plating rate, the experiment was performed by adding polyethyleneimine (PEI, C2H5N), a high molecular substance. PEI forms a cross-link at the etching tunnel inlet, playing the role of delaying the inlet plating. When the PEI solution bath was used after activation, the Ni-P layer was deposited selectively on the bottoms of the tunnels. The characteristics were analyzed by adding the PEI addition quantity rate of 100~600 mg/L into the DI water. The capacitance of the Ni-P/Al2O3 (650~700 nm)/Al film was measured at 1 kHz using an impedance/gain phase analyzer. For the plane film without etch tunnels the capacitance was 12.5 nF/cm2 and for the etch film with Ni-P bottom-up filling the capacitance was 92 nF/cm2. These results illustrate a remarkable maximization of capacitance for thin film metal capacitors.

Origin of electrically heterogeneous microstructure in CuO from scanning tunneling spectroscopy study

NASA Astrophysics Data System (ADS)

Sarkar, Sudipta; Jana, Pradip Kumar; Chaudhuri, B. K.

2008-04-01

We report electronic structure of the grains and grain boundaries (GBs) of the high permittivity (κ˜104) ceramic CuO from scanning tunneling spectroscopy (STS) studies. The p-type semiconducting character of the CuO grains and insulating behavior of the corresponding GBs, observed from STS studies, have been explained. This type of electrically inhomogeneous microstructure leads to the formation of barrier layer capacitance elements in CuO and, hence, provides an explanation of the colossal-κ response exhibited by CuO.

Large capacitance enhancement induced by metal-doping in graphene-based supercapacitors: a first-principles-based assessment.

PubMed

Paek, Eunsu; Pak, Alexander J; Hwang, Gyeong S

2014-08-13

Chemically doped graphene-based materials have recently been explored as a means to improve the performance of supercapacitors. In this work, we investigate the effects of 3d transition metals bound to vacancy sites in graphene with [BMIM][PF6] ionic liquid on the interfacial capacitance; these results are compared to the pristine graphene case with particular attention to the relative contributions of the quantum and electric double layer capacitances. Our study highlights that the presence of metal-vacancy complexes significantly increases the availability of electronic states near the charge neutrality point, thereby enhancing the quantum capacitance drastically. In addition, the use of metal-doped graphene electrodes is found to only marginally influence the microstructure and capacitance of the electric double layer. Our findings indicate that metal-doping of graphene-like electrodes can be a promising route toward increasing the interfacial capacitance of electrochemical double layer capacitors, primarily by enhancing the quantum capacitance.

From MEMRISTOR to MEMImpedance device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wakrim, T.; Univ. Grenoble Alpes, G2Elab, F-38000 Grenoble; Vallée, C., E-mail: christophe.vallee@cea.fr

2016-02-01

The behavior of the capacitance switching of HfO{sub 2} Resistive non-volatile Memories is investigated in view of realizing a MEMImpedance (MEM-Z) device. In such a Metal Insulator Metal structure, the impedance value can be tuned by the adjustment of both resistance and capacitance values. We observe a strong variation of capacitance from positive to negative values in a single layer Metal Insulator Metal device made of HfO{sub 2} deposited by Atomic Layer Deposition, but unfortunately no memory effect is observed. However, in the case of a two layer structure, a device has been obtained with a memory effect where bothmore » resistance and capacitance values can be tuned simultaneously, with a variation of capacitance down to negative values to get an inductive behavior. Negative capacitance values are observed for voltage values near SET voltage. A schematic model based on shaped oxygen vacancy density is proposed to account for this capacitance variation. The oxygen vacancies can be either isolated or connected in the bulk of the oxide.« less

The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors.

PubMed

Chen, Jiafeng; Han, Yulei; Kong, Xianghua; Deng, Xinzhou; Park, Hyo Ju; Guo, Yali; Jin, Song; Qi, Zhikai; Lee, Zonghoon; Qiao, Zhenhua; Ruoff, Rodney S; Ji, Hengxing

2016-10-24

Low-energy density has long been the major limitation to the application of supercapacitors. Introducing topological defects and dopants in carbon-based electrodes in a supercapacitor improves the performance by maximizing the gravimetric capacitance per mass of the electrode. However, the main mechanisms governing this capacitance improvement are still unclear. We fabricated planar electrodes from CVD-derived single-layer graphene with deliberately introduced topological defects and nitrogen dopants in controlled concentrations and of known configurations, to estimate the influence of these defects on the electrical double-layer (EDL) capacitance. Our experimental study and theoretical calculations show that the increase in EDL capacitance due to either the topological defects or the nitrogen dopants has the same origin, yet these two factors improve the EDL capacitance in different ways. Our work provides a better understanding of the correlation between the atomic-scale structure and the EDL capacitance and presents a new strategy for the development of experimental and theoretical models for understanding the EDL capacitance of carbon electrodes. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Calibration of micro-capacitance measurement system for thermal barrier coating testing

NASA Astrophysics Data System (ADS)

Ren, Yuan; Chen, Dixiang; Wan, Chengbiao; Tian, Wugang; Pan, Mengchun

2018-06-01

In order to comprehensively evaluate the thermal barrier coating system of an engine blade, an integrated planar sensor combining electromagnetic coils with planar capacitors is designed, in which the capacitance measurement accuracy of the planar capacitor is a key factor. The micro-capacitance measurement system is built based on an impedance analyzer. Because of the influence of non-ideal factors on the measuring system, there is an obvious difference between the measured value and the actual value. It is necessary to calibrate the measured results and eliminate the difference. In this paper, the measurement model of a planar capacitive sensor is established, and the relationship between the measured value and the actual value of capacitance is deduced. The model parameters are estimated with the least square method, and the calibration accuracy is evaluated with experiments under different dielectric conditions. The capacitance measurement error is reduced from 29% ˜ 46.5% to around 1% after calibration, which verifies the feasibility of the calibration method.

UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure

PubMed Central

Bian, Xiaolei; Jin, Hao; Wang, Xiaozhi; Dong, Shurong; Chen, Guohao; Luo, J. K.; Deen, M. Jamal; Qi, Bensheng

2015-01-01

A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV sensor has a 50 nm thick n-ZnO semiconductor layer with a carrier concentration of ~ 1017 cm−3. A large frequency downshift is observed when UV light irradiates the FBAR. With 365 nm UV light of intensity 1.7 mW/cm2, the FBAR with n-ZnO/Au Schottky diode has 250 kHz frequency downshift, much larger than the 60 kHz frequency downshift in a conventional FBAR without the n-ZnO layer. The shift in the new FBAR's resonant frequency is due to the junction formed between Au and n-ZnO semiconductor and its properties changes with UV light. The experimental results are in agreement with the theoretical analysis using an equivalent circuit model of the new FBAR structure. PMID:25773146

Three-dimensional reduced graphene oxide/polyaniline nanocomposite film prepared by diffusion driven layer-by-layer assembly for high-performance supercapacitors

NASA Astrophysics Data System (ADS)

Hong, Xiaodong; Zhang, Binbin; Murphy, Elizabeth; Zou, Jianli; Kim, Franklin

2017-03-01

As a simple and versatile method, diffusion driven Layer-by-Layer assembly (dd-LbL) is developed to assemble graphene oxide (GO) into three-dimensional (3D) structure. The assembled GO macrostructure can be reduced through a hydrothermal treatment and used as a high volumetric capacitance electrode in supercapacitors. In this report we use rGO framework created from dd-LbL as a scaffold for in situ polymerization of aniline within the pores of the framework to form rGO/polyaniline (rGO/PANI) composite. The rGO/PANI composite affords a robust and porous structure, which facilitates electrolyte diffusion and exhibits excellent electrochemical performance as binder-free electrodes in a sandwich-configuration supercapacitor. Combining electric double layer capacitance and pseudo-capacitance, rGO/PANI electrodes exhibit a specific capacitance of 438.8 F g-1 at discharge rate of 5 mA (mass of electrodes were 10.0 mg, 0.5 A g-1) in 1 mol L-1 H2SO4 electrolyte; furthermore, the generated PANI nanoparticles in rGO template achieve a higher capacitance of 763 F g-1. The rGO/PANI composite electrodes also show an improved recyclability, 76.5% of capacitance retains after recycled 2000 times.

Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures: Frequency dependence of capacitance and conductance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Köhler, K.; Pletschen, W.; Godejohann, B.

2015-11-28

Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures was used to determine the frequency dependent capacitance and conductance of FET devices in the frequency range from 50 Hz to 1 MHz. The nominally undoped low pressure metal-organic vapor-phase epitaxy structures were grown with an Al-content of 30%. An additional 1 nm thick AlN interlayer was placed in one structure before the Al{sub 0.3}Ga{sub 0.7}N layer growth. For frequencies below 10{sup 8} Hz it is convenient to use equivalent circuits to represent electric or dielectric properties of a material, a method widely used, for example, in impedance spectroscopy. We want to emphasize the relation betweenmore » frequency dependent admittance–voltage profiling and the corresponding equivalent circuits to the complex dielectric function. Debye and Drude models are used for the description of the frequency dependent admittance profiles in a range of depletion onset of the two-dimensional electron gas. Capacitance- and conductance-frequency profiles are fitted in the entire measured range by combining both models. Based on our results, we see contributions to the two-dimensional electron gas for our samples from surface states (80%) as well as from background doping in the Al{sub 0.3}Ga{sub 0.7}N barriers (20%). The specific resistance of the layers below the gate is above 10{sup 5} Ω cm for both samples and increases with increasing negative bias, i.e., the layers below the gate are essentially depleted. We propose that the resistance due to free charge carriers, determined by the Drude model, is located between gate and drain and, because of the AlN interlayer, the resistance is lowered by a factor of about 30 if compared to the sample without an AlN layer.« less

Detecting presence of cardiovascular disease through mitochondria respiration as depicted through biophotonic emission.

PubMed

Rizzo, Nancy R; Hank, Nicole C; Zhang, Jian

2016-08-01

Increased production of reactive oxygen species (ROS) in mitochondria, play an important role in the cardiovascular system. Furthermore, oxidative metabolism of mitochondria comprised of biophoton emissions, are linked to ROS and oxidative stress. In this review we investigated the association between the ability of ClearViewTM system (ClearView) to indicate the presence or absence of cardiovascular disease through mitochondria respiration as depicted through biophotonic emission. One hundred and ninety-five out of the three hundred and fifty-three human subjects enrolled in this prospective, single site study had at least one cardiovascular related diagnosis. Measurements with ClearView consisted of scanning all 10 fingers twice. Images were captured through the ClearView software and analyzed to produce a scale that indicates the presence or absence of cardiovascular disease. The association of ClearView's ability to indicate the presence or absence of cardiovascular disease with a physician's diagnosis was assessed using odds ratios (OR) and area under ROC curve (AUC). Adjusting for age, OR of ClearView measurements conducted with capacitive barrier was 3.44 (95%CI: 2.13, 5.55) and the OR without the capacitive barrier was 2.15 (95%CI: 1.42, 3.23). The OR in men were 5.91 (95%CI: 2.35, 14.85) and 2.88 (95%CI: 1.38, 6.01), adjusting for age and corresponding to with and without capacitive barrier. The OR in women were 3.50 (95%CI: 1.86, 6.59) and 2.09 (95%CI: 1.20, 3.64) with and without capacitive barrier. AUCs for measurements with capacitive barrier were >0.90. ClearView detected the presence or absence of cardiovascular disease independent of other conditions. Published by Elsevier B.V.

Detecting presence of cardiovascular disease through mitochondria respiration as depicted through biophotonic emission

PubMed Central

Rizzo, Nancy R.; Hank, Nicole C.; Zhang, Jian

2015-01-01

Aims Increased production of reactive oxygen species (ROS) in mitochondria, play an important role in the cardiovascular system. Furthermore, oxidative metabolism of mitochondria comprised of biophoton emissions, are linked to ROS and oxidative stress. In this review we investigated the association between the ability of ClearViewTM system (ClearView) to indicate the presence or absence of cardiovascular disease through mitochondria respiration as depicted through biophotonic emission. Methods and results One hundred and ninety-five out of the three hundred and fifty-three human subjects enrolled in this prospective, single site study had at least one cardiovascular related diagnosis. Measurements with ClearView consisted of scanning all 10 fingers twice. Images were captured through the ClearView software and analyzed to produce a scale that indicates the presence or absence of cardiovascular disease. The association of ClearView's ability to indicate the presence or absence of cardiovascular disease with a physician's diagnosis was assessed using odds ratios (OR) and area under ROC curve (AUC). Adjusting for age, OR of ClearView measurements conducted with capacitive barrier was 3.44 (95%CI: 2.13, 5.55) and the OR without the capacitive barrier was 2.15 (95%CI: 1.42, 3.23). The OR in men were 5.91 (95%CI: 2.35, 14.85) and 2.88 (95%CI: 1.38, 6.01), adjusting for age and corresponding to with and without capacitive barrier. The OR in women were 3.50 (95%CI: 1.86, 6.59) and 2.09 (95%CI: 1.20, 3.64) with and without capacitive barrier. AUCs for measurements with capacitive barrier were >0.90. Conclusion ClearView detected the presence or absence of cardiovascular disease independent of other conditions. PMID:26722839

The dynamical conductance of graphene tunnelling structures.

PubMed

Zhang, Huan; Chan, K S; Lin, Zijing

2011-12-16

The dynamical conductances of graphene tunnelling structures were numerically calculated using the scattering matrix method with the interaction effect included in a phenomenological approach. The overall single-barrier dynamical conductance is capacitative. Transmission resonances in the single-barrier structure lead to dips in the capacitative imaginary part of the response. This is different from the ac responses of typical semiconductor nanostructures, where transmission resonances usually lead to inductive peaks. The features of the dips depend on the Fermi energy. When the Fermi energy is below half of the barrier height, the dips are sharper. When the Fermi energy is higher than half of the barrier height, the dips are broader. Inductive behaviours can be observed in a double-barrier structure due to the resonances formed by reflection between the two barriers.

Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness

NASA Astrophysics Data System (ADS)

Shi, Xiangyang; Wu, Yuanyuan; Wang, Ding; Su, Juan; Liu, Jie; Yang, Wenxian; Xiao, Meng; Tan, Wei; Lu, Shulong; Zhang, Jian

2017-12-01

We demonstrate both theoretically and experimentally that the power density of resonant tunneling diode (RTD) can be enhanced by optimizing emitter spacer layer thickness, in addition to reducing barrier thickness. Compared to the widely used epitaxial structure with ultrathin emitter spacer layer thickness, appropriate increasing the thickness will increase the voltage drop in accumulation region, leading to larger voltage widths of negative differential resistance region. By measuring J-V characteristics, the specific contact resistivity, and the self-capacitance, we theoretically analyze the maximum output power of the fabricated RTDs. It shows that the optimized In0.8Ga0.2As/AlAs RTD with 20 nm emitter spacer thickness and 5 μm2 mesa area theoretically possesses the capability to reach 3.1 mW at 300 GHz and 1.8 mW at 600 GHz.

RF-MEMS capacitive switches with high reliability

DOEpatents

Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

2013-09-03

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

Layered Structural Co-Based MOF with Conductive Network Frames as a New Supercapacitor Electrode.

PubMed

Yang, Jie; Ma, Zhihua; Gao, Weixue; Wei, Mingdeng

2017-01-12

Layered structural Co-MOF nanosheets were synthesized and then used as an electrode material for supercapacitors for the first time. This material exhibited a high specific capacitance, a good rate capability, and an excellent cycling stability. A maximum capacitance of 2564 F g -1 can be achieved at a current density of 1 Ag -1 . Moreover, the capacitance retention can be kept at 95.8 % respectively of its initial value after 3000 cycles. To the best of our knowledge, both the specific capacitance and the capacitance retention were the highest values reported for MOF materials as supercapacitor electrodes until now. Such a high supercapacitive performance might be attributed to the intrinsic characteristics of this kind of Co-MOF material, including its layered structure, conductive network frame, and thin nanosheet. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

A high performance flexible all solid state supercapacitor based on the MnO2 sphere coated macro/mesoporous Ni/C electrode and ionic conducting electrolyte

NASA Astrophysics Data System (ADS)

Zhi, Jian; Reiser, Oliver; Wang, Youfu; Hu, Aiguo

2016-06-01

A high contact resistance between the active materials and the current collector, a low ionic conductivity of the gel electrolyte, and an impenetrable electrode structure are the three major barriers which greatly limit the capacitance of MnO2 in solid state supercapacitors. As a potential solution to these problems, in this work we report a novel electrode for solid state supercapacitors, based on a ternary system composed of hierarchical MnO2 spheres as the active material, macroporous Ni foam as gel penetrable skeletons and an ordered mesoporous carbon (OMC) membrane as the charge-transport accelerating layer. By employing butyl-3-methylimidazolium chloride (BMIMCl) modified gels as the ionic conducting electrolyte, the utilization efficiency of MnO2 on the specific capacitance was enhanced up to 88% of the theoretical value, delivering a volumetric capacitance of 81 F cm-3, which is the highest value among MnO2 based solid state supercapacitors. Moreover, such a flexible device exhibits exceptional volumetric energy and power density (6.6 Wh L-1 and 549 W L-1, based on the whole device volume) combined with a small capacity loss of 8.5% after 6000 cycles under twisting. These encouraging findings unambiguously overcome the energy bottleneck of MnO2 in solid state supercapacitors, and open up a new application of macro/mesoporous materials in flexible devices.A high contact resistance between the active materials and the current collector, a low ionic conductivity of the gel electrolyte, and an impenetrable electrode structure are the three major barriers which greatly limit the capacitance of MnO2 in solid state supercapacitors. As a potential solution to these problems, in this work we report a novel electrode for solid state supercapacitors, based on a ternary system composed of hierarchical MnO2 spheres as the active material, macroporous Ni foam as gel penetrable skeletons and an ordered mesoporous carbon (OMC) membrane as the charge-transport accelerating layer. By employing butyl-3-methylimidazolium chloride (BMIMCl) modified gels as the ionic conducting electrolyte, the utilization efficiency of MnO2 on the specific capacitance was enhanced up to 88% of the theoretical value, delivering a volumetric capacitance of 81 F cm-3, which is the highest value among MnO2 based solid state supercapacitors. Moreover, such a flexible device exhibits exceptional volumetric energy and power density (6.6 Wh L-1 and 549 W L-1, based on the whole device volume) combined with a small capacity loss of 8.5% after 6000 cycles under twisting. These encouraging findings unambiguously overcome the energy bottleneck of MnO2 in solid state supercapacitors, and open up a new application of macro/mesoporous materials in flexible devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02215d

Characterization of a SiC MIS Schottky diode as RBS particle detector

NASA Astrophysics Data System (ADS)

Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

2018-02-01

A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

Richardson constant and electrostatics in transfer-free CVD grown few-layer MoS2/graphene barristor with Schottky barrier modulation >0.6eV

NASA Astrophysics Data System (ADS)

Jahangir, Ifat; Uddin, M. Ahsan; Singh, Amol K.; Koley, Goutam; Chandrashekhar, M. V. S.

2017-10-01

We demonstrate a large area MoS2/graphene barristor, using a transfer-free method for producing 3-5 monolayer (ML) thick MoS2. The gate-controlled diodes show good rectification, with an ON/OFF ratio of ˜103. The temperature dependent back-gated study reveals Richardson's coefficient to be 80.3 ± 18.4 A/cm2/K and a mean electron effective mass of (0.66 ± 0.15)m0. Capacitance and current based measurements show the effective barrier height to vary over a large range of 0.24-0.91 eV due to incomplete field screening through the thin MoS2. Finally, we show that this barristor shows significant visible photoresponse, scaling with the Schottky barrier height. A response time of ˜10 s suggests that photoconductive gain is present in this device, resulting in high external quantum efficiency.

Computational insight into the capacitive performance of graphene edge planes

DOE PAGES

Zhan, Cheng; Zhang, Yu; Cummings, Peter T.; ...

2017-02-01

Recent experiments have shown that electric double-layer capacitors utilizing electrodes consisting of graphene edge plane exhibit higher capacitance than graphene basal plane. However, theoretical understanding of this capacitance enhancement is still limited. Here we applied a self-consistent joint density functional theory calculation on the electrode/electrolyte interface and found that the capacitance of graphene edge plane depends on the edge type: zigzag edge has higher capacitance than armchair edge due to the difference in their electronic structures. We further examined the quantum, dielectric, and electric double-layer (EDL) contributions to the total capacitance of the edge-plane electrodes. Classical molecular dynamics simulation foundmore » that the edge planes have higher EDL capacitance than the basal plane due to better adsorption of counter-ions and higher solvent accessible surface area. Finally, our work therefore has elucidated the capacitive energy storage in graphene edge planes that take into account both the electrode's electronic structure and the EDL structure.« less

Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography

NASA Astrophysics Data System (ADS)

Pascher, Nikola; Hennel, Szymon; Mueller, Susanne; Fuhrer, Andreas

2016-08-01

A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with n-type doping by phosphine. The four contacts have different separations (d = 9, 12, 16 and 29 nm) to the central 6 nm × 6 nm QD island, leading to different tunnel and capacitive coupling. Cryogenic transport measurements in the Coulomb-blockade (CB) regime are used to characterize these tunnel barriers. We find that field enhancement near the apex of narrow dopant leads is an important effect that influences both barrier breakdown and the magnitude of the tunnel current in the CB transport regime. From CB-spectroscopy measurements, we extract the mutual capacitances between the QD and the four contacts, which scale inversely with the contact separation d. The capacitances are in excellent agreement with numerical values calculated from the pattern geometry in the hydrogen resist. Furthermore, we show that by engineering the source-drain tunnel barriers to be asymmetric, we obtain a much simpler excited-state spectrum of the QD, which can be directly linked to the orbital single-particle spectrum.

Electrochemical double layers at the interface between glassy electrolytes and platinum: Differentiating between the anode and the cathode capacitance

NASA Astrophysics Data System (ADS)

Kruempelmann, J.; Mariappan, C. R.; Schober, C.; Roling, B.

2010-12-01

We have measured potential-dependent interfacial capacitances of two Na-Ca-phosphosilicate glasses and of an AgI-doped silver borate glass between ion-blocking Pt electrodes. An asymmetric electrode configuration with highly dissimilar electrode areas on both faces of the glass samples allowed us to determine the capacitance at the small-area electrode. Using equivalent circuit fitting we extract potential-dependent double-layer capacitances. The potential-dependent anodic capacitance exhibits a weak maximum and drops strongly at higher potentials. The cathodic capacitance exhibits a more pronounced maximum, this maximum being responsible for the maximum in the total capacitance observed in measurements in a symmetrical electrode configuration. The capacitance maxima of the Na-Ca phosphosilicate glasses show up at higher electrode potentials than the maxima of the AgI-doped silver borate glass. Remarkably, for both types of glasses, the potential of the cathodic capacitance maximum is closely related to the activation energy of the bulk ion transport. We compare our results to recent theoretical predictions by Shklovskii and co-workers.

Charging the quantum capacitance of graphene with a single biological ion channel.

PubMed

Wang, Yung Yu; Pham, Ted D; Zand, Katayoun; Li, Jinfeng; Burke, Peter J

2014-05-27

The interaction of cell and organelle membranes (lipid bilayers) with nanoelectronics can enable new technologies to sense and measure electrophysiology in qualitatively new ways. To date, a variety of sensing devices have been demonstrated to measure membrane currents through macroscopic numbers of ion channels. However, nanoelectronic based sensing of single ion channel currents has been a challenge. Here, we report graphene-based field-effect transistors combined with supported lipid bilayers as a platform for measuring, for the first time, individual ion channel activity. We show that the supported lipid bilayers uniformly coat the single layer graphene surface, acting as a biomimetic barrier that insulates (both electrically and chemically) the graphene from the electrolyte environment. Upon introduction of pore-forming membrane proteins such as alamethicin and gramicidin A, current pulses are observed through the lipid bilayers from the graphene to the electrolyte, which charge the quantum capacitance of the graphene. This approach combines nanotechnology with electrophysiology to demonstrate qualitatively new ways of measuring ion channel currents.

Fabrication of n-ZnO:Al/p-Si(100) heterojunction diode and its characterization

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Dharmaprakash, S. M.; Byrappa, K.

2018-04-01

Aluminum doped ZnO (n-ZnO:Al) nanostructured thin films were grown on ZnO seed layer coated p-Si(100) substrate employing hydrothermal technique. X-ray diffraction pattern revealed that the ZnO:Al film possess hexagonal wurtzite structure with preferential orientation along (002) direction. Photoluminescence of the sample displayed near band edge emission peak in the ultra-violet region and defect level emission peak in the visible region. The as grown thin film was used in the fabrication of n-ZnO:Al/p-Si heterojunction diode and the room temperature current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied. The heterojunction exhibited fairly good rectification with an ideality of 2.49 and reverse saturation current of 2 nA. The barrier height was found to be 0.668 eV from the I-V measurements. The C-V measurements showed a decrease in the capacitance of the heterojunction with an increase in the reverse bias voltage.

Charging the Quantum Capacitance of Graphene with a Single Biological Ion Channel

PubMed Central

2015-01-01

The interaction of cell and organelle membranes (lipid bilayers) with nanoelectronics can enable new technologies to sense and measure electrophysiology in qualitatively new ways. To date, a variety of sensing devices have been demonstrated to measure membrane currents through macroscopic numbers of ion channels. However, nanoelectronic based sensing of single ion channel currents has been a challenge. Here, we report graphene-based field-effect transistors combined with supported lipid bilayers as a platform for measuring, for the first time, individual ion channel activity. We show that the supported lipid bilayers uniformly coat the single layer graphene surface, acting as a biomimetic barrier that insulates (both electrically and chemically) the graphene from the electrolyte environment. Upon introduction of pore-forming membrane proteins such as alamethicin and gramicidin A, current pulses are observed through the lipid bilayers from the graphene to the electrolyte, which charge the quantum capacitance of the graphene. This approach combines nanotechnology with electrophysiology to demonstrate qualitatively new ways of measuring ion channel currents. PMID:24754625

Temperature aspect of degradation of electrochemical double-layer capacitors (EDLC)

NASA Astrophysics Data System (ADS)

Baek, Dong-Cheon; Kim, Hyun-Ho; Lee, Soon-Bok

2015-03-01

Electric double layer capacitors (EDLC) cells have a process variation and temperature dependency in capacitance so that balancing is required when they are connected in series, which includes electronic voltage management based on capacitance monitoring. This paper measured temperature aspect of capacitance periodically to monitor health and degradation behavior of EDLC stressed under high temperatures and zero below temperatures respectively, which enables estimation of the state of health (SOH) regardless of temperature. At high temperature, capacitance saturation and delayed expression of degradation was observed. After cyclic stress at zero below temperature, less effective degradation and time recovery phenomenon were occurred.

Layer-by-layer assembled heteroatom-doped graphene films with ultrahigh volumetric capacitance and rate capability for micro-supercapacitors.

PubMed

Wu, Zhong-Shuai; Parvez, Khaled; Winter, Andreas; Vieker, Henning; Liu, Xianjie; Han, Sheng; Turchanin, Andrey; Feng, Xinliang; Müllen, Klaus

2014-07-09

Highly uniform, ultrathin, layer-by-layer heteroatom (N, B) co-doped graphene films are fabricated for high-performance on-chip planar micro-supercapacitors with an ultrahigh volumetric capacitance of ∼488 F cm(-3) and excellent rate capability due to the synergistic effect of nitrogen and boron co-doping. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modeling methodology for a CMOS-MEMS electrostatic comb

NASA Astrophysics Data System (ADS)

Iyer, Sitaraman V.; Lakdawala, Hasnain; Mukherjee, Tamal; Fedder, Gary K.

2002-04-01

A methodology for combined modeling of capacitance and force 9in a multi-layer electrostatic comb is demonstrated in this paper. Conformal mapping-based analytical methods are limited to 2D symmetric cross-sections and cannot account for charge concentration effects at corners. Vertex capacitance can be more than 30% of the total capacitance in a single-layer 2 micrometers thick comb with 10 micrometers overlap. Furthermore, analytical equations are strictly valid only for perfectly symmetrical finger positions. Fringing and corner effects are likely to be more significant in a multi- layered CMOS-MEMS comb because of the presence of more edges and vertices. Vertical curling of CMOS-MEMS comb fingers may also lead to reduced capacitance and vertical forces. Gyroscopes are particularly sensitive to such undesirable forces, which therefore, need to be well-quantified. In order to address the above issues, a hybrid approach of superposing linear regression models over a set of core analytical models is implemented. Design of experiments is used to obtain data for capacitance and force using a commercial 3D boundary-element solver. Since accurate force values require significantly higher mesh refinement than accurate capacitance, we use numerical derivatives of capacitance values to compute the forces. The model is formulated such that the capacitance and force models use the same regression coefficients. The comb model thus obtained, fits the numerical capacitance data to within +/- 3% and force to within +/- 10%. The model is experimentally verified by measuring capacitance change in a specially designed test structure. The capacitance model matches measurements to within 10%. The comb model is implemented in an Analog Hardware Description Language (ADHL) for use in behavioral simulation of manufacturing variations in a CMOS-MEMS gyroscope.

Isolating the effect of pore size distribution on electrochemical double-layer capacitance using activated fluid coke

NASA Astrophysics Data System (ADS)

Zuliani, Jocelyn E.; Tong, Shitang; Kirk, Donald W.; Jia, Charles Q.

2015-12-01

Electrochemical double-layer capacitors (EDLCs) use physical ion adsorption in the capacitive electrical double layer of high specific surface area (SSA) materials to store electrical energy. Previous work shows that the SSA-normalized capacitance increases when pore diameters are less than 1 nm. However, there still remains uncertainty about the charge storage mechanism since the enhanced SSA-normalized capacitance is not observed in all microporous materials. In previous studies, the total specific surface area and the chemical composition of the electrode materials were not controlled. The current work is the first reported study that systematically compares the performance of activated carbon prepared from the same raw material, with similar chemical composition and specific surface area, but different pore size distributions. Preparing samples with similar SSAs, but different pores sizes is not straightforward since increasing pore diameters results in decreasing the SSA. This study observes that the microporous activated carbon has a higher SSA-normalized capacitance, 14.1 μF cm-2, compared to the mesoporous material, 12.4 μF cm-2. However, this enhanced SSA-normalized capacitance is only observed above a threshold operating voltage. Therefore, it can be concluded that a minimum applied voltage is required to induce ion adsorption in these sub-nanometer micropores, which increases the capacitance.

Soft-template-synthesis of hollow CuO/Co3O4 composites for pseudo-capacitive electrode: A synergetic effect on electrochemical performance

NASA Astrophysics Data System (ADS)

Wang, Kuaibing; Lv, Bo; Wu, Hua; Luo, Xuefei; Xu, Jiangyan; Geng, Zhirong

2016-12-01

Hollow CuO/Co3O4 hybrids, which inherited from its coordination polymer precursor consisting of sheets layer and nanoparticles layer composites, were synthesized and characterized by SEM, EDX, XRD and XPS. To assess its electrochemical capacitive performances, cyclic voltammetry, galvanostatic charging-discharging measurements and A.C. impedance tests were performed successively. The CuO/Co3O4 hybrids had higher capacitance and lower charge transfer resistance than bare Co3O4 nanostructures, revealing that it provided a protection layer and produced a synergistic effect due to the existence of CuO layer. The distinct synergistic effect could be further confirmed by endurance cycling tests. The capacitance of the CuO/Co3O4 hybrids was 111% retained after 500 cycles at a charging rate of 1.0 A g-1 and remained an intense growth trend after 2000 cycles at scan rate of 200 mV s-1.

Fabrication of a printed capacitive air-gap touch sensor

NASA Astrophysics Data System (ADS)

Lee, Sang Hoon; Seo, Hwiwon; Lee, Sangyoon

2018-05-01

Unlike lithography-based processes, printed electronics does not require etching, which makes it difficult to fabricate electronic devices with an air gap. In this study, we propose a method to fabricate capacitive air-gap touch sensors via printing and coating. First, the bottom electrode was fabricated on a flexible poly(ethylene terephthalate) (PET) substrate using roll-to-roll gravure printing with silver ink. Then poly(dimethylsiloxane) (PDMS) was spin coated to form a sacrificial layer. The top electrode was fabricated on the sacrificial layer by spin coating with a stretchable silver ink. The sensor samples were then put in a tetrabutylammonium (TBAF) bath to generate the air gap by removing the sacrificial layer. The capacitance of the samples was measured for verification, and the results show that the capacitance increases in proportion to the applied force from 0 to 2.5 N.

Zinc oxide nanowire-poly(methyl methacrylate) dielectric layers for polymer capacitive pressure sensors.

PubMed

Chen, Yan-Sheng; Hsieh, Gen-Wen; Chen, Shih-Ping; Tseng, Pin-Yen; Wang, Cheng-Wei

2015-01-14

Polymer capacitive pressure sensors based on a dielectric composite layer of zinc oxide nanowire and poly(methyl methacrylate) show pressure sensitivity in the range of 2.63 × 10(-3) to 9.95 × 10(-3) cm(2) gf(-1). This represents an increase of capacitance change by as much as a factor of 23 over pristine polymer devices. An ultralight load of only 10 mg (corresponding to an applied pressure of ∼0.01 gf cm(-2)) can be clearly recognized, demonstrating remarkable characteristics of these nanowire-polymer capacitive pressure sensors. In addition, optical transmittance of the dielectric composite layer is approximately 90% in the visible wavelength region. Their low processing temperature, transparency, and flexible dielectric film makes them a highly promising means for flexible touching and pressure-sensing applications.

Solid-State Ultracapacitor for Improved Energy Storage

NASA Technical Reports Server (NTRS)

Nabors, Sammy

2015-01-01

NASA's Marshall Space Flight Center has developed a solid-state ultracapacitor using a novel nanocomposite, dielectric material. The material's design is based on the internal barrier layer capacitance (IBLC) concept, and it uses novel dielectric and metallic conductive ink formulations. Novel processing methods developed by NASA provide for unique dielectric properties at the grain level. Nanoscale raw material powders are tailored using a variety of techniques and then formulated into a special ink. This dielectric ink is used with novel metallic conductive ink to print a capacitor layer structure into any design necessary to meet a range of technical requirements. The innovation is intended to replace current range safety batteries that NASA uses to power the systems that destroy off-course space vehicles. A solid-state design provides the needed robustness and safety for this demanding application.

Reducing the effect of parasitic capacitance on implantable passive resonant sensors.

PubMed

Drazan, John F; Abdoun, Omar T; Wassick, Michael T; Marcus, George A; Dahle, Reena; Beardslee, Luke A; Cady, Nathaniel C; Ledet, Eric H

2016-08-01

Passive, LC resonators have the potential to serve as small, robust, low cost, implantable sensors to wirelessly monitor implants following orthopedic surgery. One significant barrier to using LC sensors is the influence on the sensor's resonance of the surrounding conductive high permittivity media in vivo. The surrounding media can detune the resonant frequency of the LC sensor resulting in a bias. To mitigate the effects of the surrounding media, we added a "capping layer" to LC sensors to isolate them from the surrounding media. Several capping materials and thicknesses were tested to determine effectiveness at reducing the sensor's interaction with the surrounding media. Results show that a 1 mm glass capping layer on the outer surfaces of the sensor was sufficient to reduce the effects of the media on sensor signal to less than 1%.

Effects of topical corticosteroid and tacrolimus on ceramides and irritancy to sodium lauryl sulphate in healthy skin.

PubMed

Jungersted, Jakob Mutanu; Høgh, Julie K; Hellegren, Lars I; Jemec, Gregor B E; Agner, Tove

2011-05-01

The skin barrier, located in the stratum corneum, is influenced mainly by the lipid and protein composition of this layer. In eczematous diseases impairment of the skin barrier is thought to be of prime importance. Topical anti-inflammatory drugs and emollients are the most widely used eczema treatments. The aim of this study was to examine the effects of topically applied corticosteroid, tacrolimus and emollient on stratum corneum lipids and barrier parameters. Nineteen healthy volunteers participated in the study. Both forearms of the subjects were divided into four areas, which were treated twice daily for one week with betamethasone, tacrolimus, emollient, or left untreated, respectively. After one week each area was challenged with a 24 h sodium lauryl sulphate patch test. The lipids were collected using the cyanoacrylate method and evaluated by high performance thin layer chromatography. For evaluation of the skin barrier, transepidermal water loss, erythema and electrical capacitance were measured. The ceramide/cholesterol ratio was increased in betamethasone- (p = 0.008) and tacrolimus-treated (p = 0.025) skin compared with emollient-treated skin. No differences in ceramide subgroups were found between treatment regimes. Pretreatment with betamethasone (p = 0.01) or with tacrolimus (p = 0.001) causes a decreased inflammatory response to sodium lauryl sulphate compared with emollient. In conclusion, treatment with betamethasone and tacrolimus has a positive effect on the ceramide/cholesterol ratio and susceptibility to irritant reaction compared with an emollient.

Controllable synthesis of layered Co-Ni hydroxide hierarchical structures for high-performance hybrid supercapacitors

NASA Astrophysics Data System (ADS)

Yuan, Peng; Zhang, Ning; Zhang, Dan; Liu, Tao; Chen, Limiao; Ma, Renzhi; Qiu, Guanzhou; Liu, Xiaohe

2016-01-01

A facile solvothermal method is developed for synthesizing layered Co-Ni hydroxide hierarchical structures by using hexamethylenetetramine (HMT) as alkaline reagent. The electrochemical measurements reveal that the specific capacitances of layered bimetallic (Co-Ni) hydroxides are generally superior to those of layered monometallic (Co, Ni) hydroxides. The as-prepared Co0.5Ni0.5 hydroxide hierarchical structures possesses the highest specific capacitance of 1767 F g-1 at a galvanic current density of 1 A g-1 and an outstanding specific capacitance retention of 87% after 1000 cycles. In comparison with the dispersed nanosheets of Co-Ni hydroxide, layered hydroxide hierarchical structures show much superior electrochemical performance. This study provides a promising method to construct hierarchical structures with controllable transition-metal compositions for enhancing the electrochemical performance in hybrid supercapacitors.

Analysis of the Electrical Properties of an Electron Injection Layer in Alq3-Based Organic Light Emitting Diodes.

PubMed

Kim, Soonkon; Choi, Pyungho; Kim, Sangsub; Park, Hyoungsun; Baek, Dohyun; Kim, Sangsoo; Choi, Byoungdeog

2016-05-01

We investigated the carrier transfer and luminescence characteristics of organic light emitting diodes (OLEDs) with structure ITO/HAT-CN/NPB/Alq3/Al, ITO/HAT-CN/NPB/Alq3/Liq/Al, and ITO/HAT-CN/NPB/Alq3/LiF/A. The performance of the OLED device is improved by inserting an electron injection layer (EIL), which induces lowering of the electron injection barrier. We also investigated the electrical transport behaviors of p-Si/Alq3/Al, p-Si/Alq3/Liq/Al, and p-Si/Alq3/LiF/Al Schottky diodes, by using current-voltage (L-V) and capacitance-voltage (C-V) characterization methods. The parameters of diode quality factor n and barrier height φ(b) were dependent on the interlayer materials between Alq3 and Al. The barrier heights φ(b) were 0.59, 0.49, and 0.45 eV, respectively, and the diode quality factors n were 1.34, 1.31, and 1.30, respectively, obtained from the I-V characteristics. The built in potentials V(bi) were 0.41, 0.42, and 0.42 eV, respectively, obtained from the C-V characteristics. In this experiment, Liq and LiF thin film layers improved the carrier transport behaviors by increasing electron injection from Al to Alq3, and the LiF schottky diode showed better I-V performance than the Liq schottky diode. We confirmed that a Liq or LiF thin film inter-layer governs electron and hole transport at the Al/Alq3 interface, and has an important role in determining the electrical properties of OLED devices.

Non-mean-field theory of anomalously large double layer capacitance

NASA Astrophysics Data System (ADS)

Loth, M. S.; Skinner, Brian; Shklovskii, B. I.

2010-07-01

Mean-field theories claim that the capacitance of the double layer formed at a metal/ionic conductor interface cannot be larger than that of the Helmholtz capacitor, whose width is equal to the radius of an ion. However, in some experiments the apparent width of the double layer capacitor is substantially smaller. We propose an alternate non-mean-field theory of the ionic double layer to explain such large capacitance values. Our theory allows for the binding of discrete ions to their image charges in the metal, which results in the formation of interface dipoles. We focus primarily on the case where only small cations are mobile and other ions form an oppositely charged background. In this case, at small temperature and zero applied voltage dipoles form a correlated liquid on both contacts. We show that at small voltages the capacitance of the double layer is determined by the transfer of dipoles from one electrode to the other and is therefore limited only by the weak dipole-dipole repulsion between bound ions so that the capacitance is very large. At large voltages the depletion of bound ions from one of the capacitor electrodes triggers a collapse of the capacitance to the much smaller mean-field value, as seen in experimental data. We test our analytical predictions with a Monte Carlo simulation and find good agreement. We further argue that our “one-component plasma” model should work well for strongly asymmetric ion liquids. We believe that this work also suggests an improved theory of pseudocapacitance.

Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

2018-02-01

The capacitive characteristics of metal-insulator-semiconductor (MIS) structures based on the compositionally graded Hg1-xCdxTe created by molecular beam epitaxy have been experimentally investigated in a wide temperature range (8-77 K). A program has been developed for numerical simulation of ideal capacitance-voltage (C-V) characteristics in the low-frequency and high-frequency approximations. The concentrations of the majority carriers in the near-surface semiconductor layer are determined from the values of the capacitances in the minima of low-frequency C-V curves. For MIS structures based on p-Hg1-xCdxTe, the effect of the presence of the compositionally graded layer on the hole concentration in the near-surface semiconductor layer, determined from capacitive measurements, has not been established. Perhaps this is due to the fact that the concentration of holes in the near-surface layer largely depends on the type of dielectric coating and the regimes of its application. For MIS structures based on n-Hg1-x Cd x Te (x = 0.22-0.23) without a graded-gap layer, the electron concentration determined by the proposed method is close to the average concentration determined by the Hall measurements. The electron concentration in the near-surface semiconductor layer of the compositionally graded n-Hg1-x Cd x Te (x = 0.22-0.23) found from the minimum capacitance value is much higher than the average electron concentration determined by the Hall measurements. The results are qualitatively explained by the creation of additional intrinsic donor-type defects in the near-surface compositionally graded layer of n-Hg1-x Cd x Te.

New insights into the interface between a single-crystalline metal electrode and an extremely pure ionic liquid: slow interfacial processes and the influence of temperature on interfacial dynamics.

PubMed

Drüschler, Marcel; Borisenko, Natalia; Wallauer, Jens; Winter, Christian; Huber, Benedikt; Endres, Frank; Roling, Bernhard

2012-04-21

Ionic liquids are of high interest for the development of safe electrolytes in modern electrochemical cells, such as batteries, supercapacitors and dye-sensitised solar cells. However, electrochemical applications of ionic liquids are still hindered by the limited understanding of the interface between electrode materials and ionic liquids. In this article, we first review the state of the art in both experiment and theory. Then we illustrate some general trends by taking the interface between the extremely pure ionic liquid 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl)trifluorophosphate and an Au(111) electrode as an example. For the study of this interface, electrochemical impedance spectroscopy was combined with in situ STM and in situ AFM techniques. In addition, we present new results for the temperature dependence of the interfacial capacitance and dynamics. Since the interfacial dynamics are characterised by different processes taking place on different time scales, the temperature dependence of the dynamics can only be reliably studied by recording and carefully analysing broadband capacitance spectra. Single-frequency experiments may lead to artefacts in the temperature dependence of the interfacial capacitance. We demonstrate that the fast capacitive process exhibits a Vogel-Fulcher-Tamman temperature dependence, since its time scale is governed by the ionic conductivity of the ionic liquid. In contrast, the slower capacitive process appears to be Arrhenius activated. This suggests that the time scale of this process is determined by a temperature-independent barrier, which may be related to structural reorganisations of the Au surface and/or to charge redistributions in the strongly bound innermost ion layer. This journal is © the Owner Societies 2012

Double layer of platinum electrodes: Non-monotonic surface charging phenomena and negative double layer capacitance

NASA Astrophysics Data System (ADS)

Huang, Jun; Zhou, Tao; Zhang, Jianbo; Eikerling, Michael

2018-01-01

In this study, a refined double layer model of platinum electrodes accounting for chemisorbed oxygen species, oriented interfacial water molecules, and ion size effects in solution is presented. It results in a non-monotonic surface charging relation and a peculiar capacitance vs. potential curve with a maximum and possibly negative values in the potential regime of oxide-formation.

In situ fabrication of nickel aluminum-layered double hydroxide nanosheets/hollow carbon nanofibers composite as a novel electrode material for supercapacitors

NASA Astrophysics Data System (ADS)

He, Fang; Hu, Zhibiao; Liu, Kaiyu; Zhang, Shuirong; Liu, Hongtao; Sang, Shangbin

2014-12-01

This paper introduces a new design route to fabricate nickel aluminum-layered double hydroxide (NiAl-LDH) nanosheets/hollow carbon nanofibers (CNFs) composite through an in situ growth method. The NiAl-LDH thin layers which grow on hollow carbon nanofibers have an average thickness of 13.6 nm. The galvanostatic charge-discharge test of the NiAl-LDH/CNFs composite yields an impressive specific capacitance of 1613 F g-1 at 1 A g-1 in 6 M KOH solution, the composite shows a remarkable specific capacitance of 1110 F g-1 even at a high current density of 10 A g-1. Furthermore, the composite remains a specific capacitance of 1406 F g-1 after 1000 cycles at 2 A g-1, indicating the composite has excellent high-current capacitive behavior and good cycle stability in compared to pristine NiAl-LDH.

200-BP-1 Prototype Hanford Barrier -- 15 Years of Performance Monitoring

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ward, Anderson L.; Draper, Kathryn E.; Link, Steven O.

2011-09-30

Monitoring is an essential component of engineered barrier system design and operation. A composite capacitive cover, including a capillary break and an evapotranspiration (ET) barrier at the Hanford Site, is generating data that can be used to help resolve these issues. The prototype Hanford barrier was constructed over the 216-B-57 Crib in 1994 to evaluate surface-barrier constructability, construction costs, and physical and hydrologic performance at the field scale. The barrier has been routinely monitored between November 1994 and September 1998 as part of a Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA) treatability test of barrier performance formore » the 200 BP 1 Operable Unit. Since FY 1998, monitoring has focused on a more limited set of key water balance, stability, and biotic parameters. In FY 2009, data collection was focused on: (1) water-balance monitoring, consisting of precipitation, runoff, soil moisture storage, and drainage measurements with evapotranspiration calculated by difference; (2) stability monitoring, consisting of asphalt-layer-settlement, basalt-side-slope-stability, and surface-elevation measurements; (3) vegetation dynamics; and (4) animal use. September 2009 marked 15 years since the start of monitoring and the collection of performance data. This report describes the results of monitoring activities during the period October 1, 2008, through September 30, 2009, and summarizes the 15 years of performance data collected from September 1994 through September 2009.« less

Effect of Plasma Membrane Semipermeability in Making the Membrane Electric Double Layer Capacitances Significant.

PubMed

Sinha, Shayandev; Sachar, Harnoor Singh; Das, Siddhartha

2018-01-30

Electric double layers (or EDLs) formed at the membrane-electrolyte interface (MEI) and membrane-cytosol interface (MCI) of a charged lipid bilayer plasma membrane develop finitely large capacitances. However, these EDL capacitances are often much larger than the intrinsic capacitance of the membrane, and all of these capacitances are in series. Consequently, the effect of these EDL capacitances in dictating the overall membrane-EDL effective capacitance C eff becomes negligible. In this paper, we challenge this conventional notion pertaining to the membrane-EDL capacitances. We demonstrate that, on the basis of the system parameters, the EDL capacitance for both the permeable and semipermeable membranes can be small enough to influence C eff . For the semipermeable membranes, however, this lowering of the EDL capacitance can be much larger, ensuring a reduction of C eff by more than 20-25%. Furthermore, for the semipermeable membranes, the reduction in C eff is witnessed over a much larger range of system parameters. We attribute such an occurrence to the highly nonintuitive electrostatic potential distribution associated with the recently discovered phenomena of charge-inversion-like electrostatics and the attainment of a positive zeta potential at the MCI for charged semipermeable membranes. We anticipate that our findings will impact the quantification and the identification of a large number of biophysical phenomena that are probed by measuring the plasma membrane capacitance.

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.

PubMed

Fisichella, Gabriele; Greco, Giuseppe; Roccaforte, Fabrizio; Giannazzo, Filippo

2014-08-07

Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an "ordinary" 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al(0.25)Ga(0.75)N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ∼ 24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM). From these analyses, performed both on Gr/AlGaN/GaN and on AlGaN/GaN reference samples using AFM tips with different metal coatings, the Gr/AlGaN Schottky barrier height ΦB and its lateral uniformity were evaluated, as well as the variation of the carrier densities of graphene (ngr) and AlGaN/GaN 2DEG (ns) as a function of the applied bias. A low Schottky barrier (∼ 0.40 eV) with excellent spatial uniformity was found at the Gr/AlGaN interface, i.e., lower compared to the measured values for metal/AlGaN contacts, which range from ∼ 0.6 to ∼ 1.1 eV depending on the metal workfunction. The electrical behavior of the Gr/AlGaN contact has been explained by Gr interaction with AlGaN donor-like surface states located in close proximity, which are also responsible of high n-type Gr doping (∼ 1.3 × 10(13) cm(-2)). An effective modulation of ns by the Gr Schottky contact was demonstrated by capacitance analysis under reverse bias. From this basic understanding of transport properties in Gr/AlGaN/GaN heterostructures, novel vertical field effect transistor concepts with high operating speed and I(on)/I(off) ratio can be envisaged.

Photon induced non-linear quantized double layer charging in quaternary semiconducting quantum dots.

PubMed

Nair, Vishnu; Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Aslam, M

2018-03-15

Room temperature quantized double layer charging was observed in 2 nm Cu 2 ZnSnS 4 (CZTS) quantum dots. In addition to this we observed a distinct non-linearity in the quantized double layer charging arising from UV light modulation of double layer. UV light irradiation resulted in a 26% increase in the integral capacitance at the semiconductor-dielectric (CZTS-oleylamine) interface of the quantum dot without any change in its core size suggesting that the cause be photocapacitive. The increasing charge separation at the semiconductor-dielectric interface due to highly stable and mobile photogenerated carriers cause larger electrostatic forces between the quantum dot and electrolyte leading to an enhanced double layer. This idea was supported by a decrease in the differential capacitance possible due to an enhanced double layer. Furthermore the UV illumination enhanced double layer gives us an AC excitation dependent differential double layer capacitance which confirms that the charging process is non-linear. This ultimately illustrates the utility of a colloidal quantum dot-electrolyte interface as a non-linear photocapacitor. Copyright © 2017 Elsevier Inc. All rights reserved.

Barrier SiO2-like coatings for archaeological artefacts preservation

NASA Astrophysics Data System (ADS)

Prochazka, M.; Blahova, L.; Krcma, F.

2016-10-01

Thin film chemical vapour deposition technique has been used for more than 50 years. Introducing organo-silicones as precursors, e.g. hexamethyldisiloxane (HMDSO) or tetraethyl orthosilicate (TEOS), brought new possibilities to this method. Barrier properties of thin films have become an important issue, especially for army and emergency services as well as for food and drink manufacturers. Our work is focused on protective HMDSO thin films for encapsulating cleaned archaeological artefacts, preventing the corrosion from destroying these historical items.Thin films are deposited via plasma enhanced chemical vapour deposition (PECVD) technique using low pressure capacitively coupled pasma in flow regime. Oxygen transmission rate (OTR) measurement was chosen as the most important one for characterization of barrier properties of deposited thin films. Lowest OTR reached for 50 nm thin film thickness was 120 cm3 m-2 atm-1 day-1. Samples were also analyzed by Fourier Transform Infrared spectrometry (FTIR) to determine their composition. Optical emission spectra and thin film thickness were measured during the deposition process. We optimized the deposition parameters for barrier layers by implementation of pulsed mode of plasma and argon plasma pre-treatment into the process.

Evaluation of molecular dynamics simulation methods for ionic liquid electric double layers.

PubMed

Haskins, Justin B; Lawson, John W

2016-05-14

We investigate how systematically increasing the accuracy of various molecular dynamics modeling techniques influences the structure and capacitance of ionic liquid electric double layers (EDLs). The techniques probed concern long-range electrostatic interactions, electrode charging (constant charge versus constant potential conditions), and electrolyte polarizability. Our simulations are performed on a quasi-two-dimensional, or slab-like, model capacitor, which is composed of a polarizable ionic liquid electrolyte, [EMIM][BF4], interfaced between two graphite electrodes. To ensure an accurate representation of EDL differential capacitance, we derive new fluctuation formulas that resolve the differential capacitance as a function of electrode charge or electrode potential. The magnitude of differential capacitance shows sensitivity to different long-range electrostatic summation techniques, while the shape of differential capacitance is affected by charging technique and the polarizability of the electrolyte. For long-range summation techniques, errors in magnitude can be mitigated by employing two-dimensional or corrected three dimensional electrostatic summations, which led to electric fields that conform to those of a classical electrostatic parallel plate capacitor. With respect to charging, the changes in shape are a result of ions in the Stern layer (i.e., ions at the electrode surface) having a higher electrostatic affinity to constant potential electrodes than to constant charge electrodes. For electrolyte polarizability, shape changes originate from induced dipoles that soften the interaction of Stern layer ions with the electrode. The softening is traced to ion correlations vertical to the electrode surface that induce dipoles that oppose double layer formation. In general, our analysis indicates an accuracy dependent differential capacitance profile that transitions from the characteristic camel shape with coarser representations to a more diffuse profile with finer representations.

Anomalous Capacitance Maximum of the Glassy Carbon-Ionic Liquid Interface through Dilution with Organic Solvents.

PubMed

Bozym, David J; Uralcan, Betül; Limmer, David T; Pope, Michael A; Szamreta, Nicholas J; Debenedetti, Pablo G; Aksay, Ilhan A

2015-07-02

We use electrochemical impedance spectroscopy to measure the effect of diluting a hydrophobic room temperature ionic liquid with miscible organic solvents on the differential capacitance of the glassy carbon-electrolyte interface. We show that the minimum differential capacitance increases with dilution and reaches a maximum value at ionic liquid contents near 5-10 mol% (i.e., ∼1 M). We provide evidence that mixtures with 1,2-dichloroethane, a low-dielectric constant solvent, yield the largest gains in capacitance near the open circuit potential when compared against two traditional solvents, acetonitrile and propylene carbonate. To provide a fundamental basis for these observations, we use a coarse-grained model to relate structural variations at the double layer to the occurrence of the maximum. Our results reveal the potential for the enhancement of double-layer capacitance through dilution.

Negative quantum capacitance induced by midgap states in single-layer graphene.

PubMed

Wang, Lin; Wang, Yang; Chen, Xiaolong; Zhu, Wei; Zhu, Chao; Wu, Zefei; Han, Yu; Zhang, Mingwei; Li, Wei; He, Yuheng; Xiong, Wei; Law, Kam Tuen; Su, Dangsheng; Wang, Ning

2013-01-01

We demonstrate that single-layer graphene (SLG) decorated with a high density of Ag adatoms displays the unconventional phenomenon of negative quantum capacitance. The Ag adatoms act as resonant impurities and form nearly dispersionless resonant impurity bands near the charge neutrality point (CNP). Resonant impurities quench the kinetic energy and drive the electrons to the Coulomb energy dominated regime with negative compressibility. In the absence of a magnetic field, negative quantum capacitance is observed near the CNP. In the quantum Hall regime, negative quantum capacitance behavior at several Landau level positions is displayed, which is associated with the quenching of kinetic energy by the formation of Landau levels. The negative quantum capacitance effect near the CNP is further enhanced in the presence of Landau levels due to the magnetic-field-enhanced Coulomb interactions.

Negative Quantum Capacitance Induced by Midgap States in Single-layer Graphene

PubMed Central

Wang, Lin; Wang, Yang; Chen, Xiaolong; Zhu, Wei; Zhu, Chao; Wu, Zefei; Han, Yu; Zhang, Mingwei; Li, Wei; He, Yuheng; Xiong, Wei; Law, Kam Tuen; Su, Dangsheng; Wang, Ning

2013-01-01

We demonstrate that single-layer graphene (SLG) decorated with a high density of Ag adatoms displays the unconventional phenomenon of negative quantum capacitance. The Ag adatoms act as resonant impurities and form nearly dispersionless resonant impurity bands near the charge neutrality point (CNP). Resonant impurities quench the kinetic energy and drive the electrons to the Coulomb energy dominated regime with negative compressibility. In the absence of a magnetic field, negative quantum capacitance is observed near the CNP. In the quantum Hall regime, negative quantum capacitance behavior at several Landau level positions is displayed, which is associated with the quenching of kinetic energy by the formation of Landau levels. The negative quantum capacitance effect near the CNP is further enhanced in the presence of Landau levels due to the magnetic-field-enhanced Coulomb interactions. PMID:23784258

Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

PubMed

Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

2016-12-01

Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

Effect of temperature on compact layer of Pt electrode in PEMFCs by first-principles molecular dynamics calculations

NASA Astrophysics Data System (ADS)

He, Yang; Chen, Changfeng; Yu, Haobo; Lu, Guiwu

2017-01-01

Formation of the double-layer electric field and capacitance of the water-metal interface is of significant interest in physicochemical processes. In this study, we perform first- principles molecular dynamics simulations on the water/Pt(111) interface to investigate the temperature dependence of the compact layer electric field and capacitance based on the calculated charge densities. On the Pt (111) surface, water molecules form ice-like structures that exhibit more disorder along the height direction with increasing temperature. The Osbnd H bonds of more water molecules point toward the Pt surface to form Ptsbnd H covalent bonds with increasing temperature, which weaken the corresponding Osbnd H bonds. In addition, our calculated capacitance at 300 K is 15.2 mF/cm2, which is in good agreement with the experimental results. As the temperature increases from 10 to 450 K, the field strength and capacitance of the compact layer on Pt (111) first increase and then decrease slightly, which is significant for understanding the water/Pt interface from atomic level.

A Novel Layered Sedimentary Rocks Structure of the Oxygen-Enriched Carbon for Ultrahigh-Rate-Performance Supercapacitors.

PubMed

Zhang, Lin-Lin; Li, Huan-Huan; Shi, Yan-Hong; Fan, Chao-Ying; Wu, Xing-Long; Wang, Hai-Feng; Sun, Hai-Zhu; Zhang, Jing-Ping

2016-02-17

In this paper, gelatin as a natural biomass was selected to successfully prepare an oxygen-enriched carbon with layered sedimentary rocks structure, which exhibited ultrahigh-rate performance and excellent cycling stability as supercapacitors. The specific capacitance reached 272.6 F g(-1) at 1 A g(-1) and still retained 197.0 F g(-1) even at 100 A g(-1) (with high capacitance retention of 72.3%). The outstanding electrochemical performance resulted from the special layered structure with large surface area (827.8 m(2) g(-1)) and high content of oxygen (16.215 wt %), which effectively realized the synergistic effects of the electrical double-layer capacitance and pseudocapacitance. Moreover, it delivered an energy density of 25.3 Wh kg(-1) even with a high power density of 34.7 kW kg(-1) and ultralong cycling stability (with no capacitance decay even over 10,000 cycles at 2 A g(-1)) in a symmetric supercapacitor, which are highly desirable for their practical application in energy storage devices and conversion.

Improving accuracy of electrochemical capacitance and solvation energetics in first-principles calculations

NASA Astrophysics Data System (ADS)

Sundararaman, Ravishankar; Letchworth-Weaver, Kendra; Schwarz, Kathleen A.

2018-04-01

Reliable first-principles calculations of electrochemical processes require accurate prediction of the interfacial capacitance, a challenge for current computationally efficient continuum solvation methodologies. We develop a model for the double layer of a metallic electrode that reproduces the features of the experimental capacitance of Ag(100) in a non-adsorbing, aqueous electrolyte, including a broad hump in the capacitance near the potential of zero charge and a dip in the capacitance under conditions of low ionic strength. Using this model, we identify the necessary characteristics of a solvation model suitable for first-principles electrochemistry of metal surfaces in non-adsorbing, aqueous electrolytes: dielectric and ionic nonlinearity, and a dielectric-only region at the interface. The dielectric nonlinearity, caused by the saturation of dipole rotational response in water, creates the capacitance hump, while ionic nonlinearity, caused by the compactness of the diffuse layer, generates the capacitance dip seen at low ionic strength. We show that none of the previously developed solvation models simultaneously meet all these criteria. We design the nonlinear electrochemical soft-sphere solvation model which both captures the capacitance features observed experimentally and serves as a general-purpose continuum solvation model.

Application Of Ti-Based Self-Formation Barrier Layers To Cu Dual-Damascene Interconnects

NASA Astrophysics Data System (ADS)

Ito, Kazuhiro; Ohmori, Kazuyuki; Kohama, Kazuyuki; Mori, Kenichi; Maekawa, Kazuyoshi; Asai, Koyu; Murakami, Masanori

2010-11-01

Cu interconnects have been used extensively in ULSI devices. However, large resistance-capacitance delay and poor device reliability have been critical issues as the device feature size has reduced to nanometer scale. In order to achieve low resistance and high reliability of Cu interconnects, we have applied a thin Ti-based self-formed barrier (SFB) using Cu(Ti) alloy seed to 45nm-node dual damascene interconnects and evaluated its performance. The line resistance and via resistance decreased significantly, compared with those of conventional Ta/TaN barriers. The stress migration performance was also drastically improved using the SFB process. A performance of time dependent dielectric breakdown revealed superior endurance. These results suggest that the Ti-based SFB process is one of the most promising candidates for advanced Cu interconnects. TEM and X-ray photoelectron spectroscopy observations for characterization of the Ti-based SFB structure were also performed. The Ti-based SFB consisted of mainly amorphous Ti oxides. Amorphous or crystalline Ti compounds such as TiC, TiN, and TiSi formed beneath Cu alloy films, and the formation varied with dielectric.

Impedance and electric modulus approaches to investigate four origins of giant dielectric constant in CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Yuan, Wen-Xiang

2012-03-01

The frequency dependence of electric modulus of polycrystalline CaCu3Ti4O12 (CCTO) ceramics has been investigated. The experimental data have also been analyzed in the complex plane of impedance and electric modulus, and a suitable equivalent circuit has been proposed to explain the dielectric response. Four dielectric responses are first distinguished in the impedance and modulus spectroscopies. The results are well interpreted in terms of a triple insulating barrier capacitor model. Using this model, these four dielectric relaxations are attributed to the domain, domain-boundary, grain-boundary, and surface layer effects with three Maxwell-Wagner relaxations. Moreover, the values of the resistance and capacitance of bulk CCTO phase, domain-boundary, grain-boundary and surface layer contributions have been calculated directly from the peak characteristics of spectroscopic plots.

High efficiency solution processed sintered CdTe nanocrystal solar cells: the role of interfaces.

PubMed

Panthani, Matthew G; Kurley, J Matthew; Crisp, Ryan W; Dietz, Travis C; Ezzyat, Taha; Luther, Joseph M; Talapin, Dmitri V

2014-02-12

Solution processing of photovoltaic semiconducting layers offers the potential for drastic cost reduction through improved materials utilization and high device throughput. One compelling solution-based processing strategy utilizes semiconductor layers produced by sintering nanocrystals into large-grain semiconductors at relatively low temperatures. Using n-ZnO/p-CdTe as a model system, we fabricate sintered CdTe nanocrystal solar cells processed at 350 °C with power conversion efficiencies (PCE) as high as 12.3%. JSC of over 25 mA cm(-2) are achieved, which are comparable or higher than those achieved using traditional, close-space sublimated CdTe. We find that the VOC can be substantially increased by applying forward bias for short periods of time. Capacitance measurements as well as intensity- and temperature-dependent analysis indicate that the increased VOC is likely due to relaxation of an energetic barrier at the ITO/CdTe interface.

Reduced distribution of threshold voltage shift in double layer NiSi2 nanocrystals for nano-floating gate memory applications.

PubMed

Choi, Sungjin; Lee, Junhyuk; Kim, Donghyoun; Oh, Seulki; Song, Wangyu; Choi, Seonjun; Choi, Eunsuk; Lee, Seung-Beck

2011-12-01

We report on the fabrication and capacitance-voltage characteristics of double layer nickel-silicide nanocrystals with Si3N4 interlayer tunnel barrier for nano-floating gate memory applications. Compared with devices using SiO2 interlayer, the use of Si3N4 interlayer separation reduced the average size (4 nm) and distribution (+/- 2.5 nm) of NiSi2 nanocrystal (NC) charge traps by more than 50% and giving a two fold increase in NC density to 2.3 x 10(12) cm(-2). The increased density and reduced NC size distribution resulted in a significantly decrease in the distribution of the device C-V characteristics. For each program voltage, the distribution of the shift in the threshold voltage was reduced by more than 50% on average to less than 0.7 V demonstrating possible multi-level-cell operation.

Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tarasova, E. A.; Obolenskaya, E. S., E-mail: obolensk@rf.unn.ru; Hananova, A. V.

The sensitivity of classical n{sup +}/n{sup –} GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to γ-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current–voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defectsmore » that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.« less

The Electrical Double Layer and Its Structure

NASA Astrophysics Data System (ADS)

Stojek, Zbigniew

At any electrode immersed in an electrolyte solution, a specific interfacial region is formed. This region is called the double layer. The electrical properties of such a layer are important, since they significantly affect the electrochemical measurements. In an electrical circuit used to measure the current that flows at a particular working electrode, the double layer can be viewed as a capacitor. Figure I.1.1 depicts this situation where the electrochemical cell is represented by an electrical circuit and capacitor C d corresponds to the differential capacity of the double layer. To obtain a desired potential at the working electrodes, the double-layer capacitor must be first appropriately charged, which means that a capacitive current, not related to the reduction or oxidation of the substrates, flows in the electrical circuit. While this capacitive current carries some information concerning the double layer and its structure, and in some cases can be used for analytical purposes, in general, it interferes with electrochemical investigations. A variety of methods are used in electrochemistry to depress, isolate, or filter the capacitive current.

A dielectric model of self-assembled monolayer interfaces by capacitive spectroscopy.

PubMed

Góes, Márcio S; Rahman, Habibur; Ryall, Joshua; Davis, Jason J; Bueno, Paulo R

2012-06-26

The presence of self-assembled monolayers at an electrode introduces capacitance and resistance contributions that can profoundly affect subsequently observed electronic characteristics. Despite the impact of this on any voltammetry, these contributions are not directly resolvable with any clarity by standard electrochemical means. A capacitive analysis of such interfaces (by capacitance spectroscopy), introduced here, enables a clean mapping of these features and additionally presents a means of studying layer polarizability and Cole-Cole relaxation effects. The resolved resistive term contributes directly to an intrinsic monolayer uncompensated resistance that has a linear dependence on the layer thickness. The dielectric model proposed is fully aligned with the classic Helmholtz plate capacitor model and additionally explains the inherently associated resistive features of molecular films.

Dielectric capacitors with three-dimensional nanoscale interdigital electrodes for energy storage.

PubMed

Han, Fangming; Meng, Guowen; Zhou, Fei; Song, Li; Li, Xinhua; Hu, Xiaoye; Zhu, Xiaoguang; Wu, Bing; Wei, Bingqing

2015-10-01

Dielectric capacitors are promising candidates for high-performance energy storage systems due to their high power density and increasing energy density. However, the traditional approach strategies to enhance the performance of dielectric capacitors cannot simultaneously achieve large capacitance and high breakdown voltage. We demonstrate that such limitations can be overcome by using a completely new three-dimensional (3D) nanoarchitectural electrode design. First, we fabricate a unique nanoporous anodic aluminum oxide (AAO) membrane with two sets of interdigitated and isolated straight nanopores opening toward opposite planar surfaces. By depositing carbon nanotubes in both sets of pores inside the AAO membrane, the new dielectric capacitor with 3D nanoscale interdigital electrodes is simply realized. In our new capacitors, the large specific surface area of AAO can provide large capacitance, whereas uniform pore walls and hemispheric barrier layers can enhance breakdown voltage. As a result, a high energy density of 2 Wh/kg, which is close to the value of a supercapacitor, can be achieved, showing promising potential in high-density electrical energy storage for various applications.

Dielectric capacitors with three-dimensional nanoscale interdigital electrodes for energy storage

PubMed Central

Han, Fangming; Meng, Guowen; Zhou, Fei; Song, Li; Li, Xinhua; Hu, Xiaoye; Zhu, Xiaoguang; Wu, Bing; Wei, Bingqing

2015-01-01

Dielectric capacitors are promising candidates for high-performance energy storage systems due to their high power density and increasing energy density. However, the traditional approach strategies to enhance the performance of dielectric capacitors cannot simultaneously achieve large capacitance and high breakdown voltage. We demonstrate that such limitations can be overcome by using a completely new three-dimensional (3D) nanoarchitectural electrode design. First, we fabricate a unique nanoporous anodic aluminum oxide (AAO) membrane with two sets of interdigitated and isolated straight nanopores opening toward opposite planar surfaces. By depositing carbon nanotubes in both sets of pores inside the AAO membrane, the new dielectric capacitor with 3D nanoscale interdigital electrodes is simply realized. In our new capacitors, the large specific surface area of AAO can provide large capacitance, whereas uniform pore walls and hemispheric barrier layers can enhance breakdown voltage. As a result, a high energy density of 2 Wh/kg, which is close to the value of a supercapacitor, can be achieved, showing promising potential in high-density electrical energy storage for various applications. PMID:26601294

Influence of nonelectrostatic ion-ion interactions on double-layer capacitance

NASA Astrophysics Data System (ADS)

Zhao, Hui

2012-11-01

Recently a Poisson-Helmholtz-Boltzmann (PHB) model [Bohinc , Phys. Rev. EPLEEE81539-375510.1103/PhysRevE.85.031130 85, 031130 (2012)] was developed by accounting for solvent-mediated nonelectrostatic ion-ion interactions. Nonelectrostatic interactions are described by a Yukawa-like pair potential. In the present work, we modify the PHB model by adding steric effects (finite ion size) into the free energy to derive governing equations. The modified PHB model is capable of capturing both ion specificity and ion crowding. This modified model is then employed to study the capacitance of the double layer. More specifically, we focus on the influence of nonelectrostatic ion-ion interactions on charging a double layer near a flat surface in the presence of steric effects. We numerically compute the differential capacitance as a function of the voltage under various conditions. At small voltages and low salt concentrations (dilute solution), we find out that the predictions from the modified PHB model are the same as those from the classical Poisson-Boltzmann theory, indicating that nonelectrostatic ion-ion interactions and steric effects are negligible. At moderate voltages, nonelectrostatic ion-ion interactions play an important role in determining the differential capacitance. Generally speaking, nonelectrostatic interactions decrease the capacitance because of additional nonelectrostatic repulsion among excess counterions inside the double layer. However, increasing the voltage gradually favors steric effects, which induce a condensed layer with crowding of counterions near the electrode. Accordingly, the predictions from the modified PHB model collapse onto those computed by the modified Poisson-Boltzmann theory considering steric effects alone. Finally, theoretical predictions are compared and favorably agree with experimental data, in particular, in concentrated solutions, leading one to conclude that the modified PHB model adequately predicts the diffuse-charge dynamics of the double layer with ion specificity and steric effects.

First-Principles Molecular Dynamics Study on the Electric-double layer Capacitance of Water-MXene interfaces

NASA Astrophysics Data System (ADS)

Ando, Yasunobu; Otani, Minoru

MXenes are a new, large family of layered materials synthesized from MAX phases by simple chemical treatments. Due to their enormous variations, MXenes have attracted great attention as promising candidates as anode materials for next-generation secondary batteries. Unfortunately, the specific capacitance of MXenes supercapacitors is lower than that of active-carbon ones. Theoretical investigation of the electric-double layer (EDL) at electrode interfaces is necessary to improve their capacitance. First-principles molecular dynamics (FPMD) simulation based on the density functional theory (DFT) is performed to estimate the EDL capacitance from a potential profile V(z) and a charge distribution q(z) induced by the ions at water-Ti2CTx (T =O, F) interfaces. Potential profiles V(z) of both Ti2CO2 and Ti2CF2 decrease about 1.0 eV steeply in a region of only 3 Å from a Ti layer, which is the same profile at the platinum interfaces. On the other hand, induced charge distribution q(z) depends on the species of surface termination. Induced electrons are introduced at Ti layers in the case of O surface termination. However, Ti2CF2 is not capable to store electrons at Ti layers because it is mono-valence anions. It indicates that effective surface-position of MXenes depends on the surface terminations. Our results are revealed that small induced charge leads the low EDL capacitance at MXene interfaces. This is because interface polarization due to strong interaction between water and Ti2CTx induces net charge. The surface net charge hinders the introduction of ion-induced charges.

Microwave-Assisted Synthesis of Highly-Crumpled, Few-Layered Graphene and Nitrogen-Doped Graphene for Use as High-Performance Electrodes in Capacitive Deionization

NASA Astrophysics Data System (ADS)

Amiri, Ahmad; Ahmadi, Goodarz; Shanbedi, Mehdi; Savari, Maryam; Kazi, S. N.; Chew, B. T.

2015-12-01

Capacitive deionization (CDI) is a promising procedure for removing various charged ionic species from brackish water. The performance of graphene-based material in capacitive deionization is lower than the expectation of the industry, so highly-crumpled, few-layered graphene (HCG) and highly-crumpled nitrogen-doped graphene (HCNDG) with high surface area have been introduced as promising candidates for CDI electrodes. Thus, HCG and HCNDG were prepared by exfoliation of graphite in the presence of liquid-phase, microwave-assisted methods. An industrially-scalable, cost-effective, and simple approach was employed to synthesize HCG and HCNDG, resulting in few-layered graphene and nitrogen-doped graphene with large specific surface area. Then, HCG and HCNDG were utilized for manufacturing a new class of carbon nanostructure-based electrodes for use in large-scale CDI equipment. The electrosorption results indicated that both the HCG and HCNDG have fairly large specific surface areas, indicating their huge potential for capacitive deionization applications.

Fabrication of 3D polypyrrole microstructures and their utilization as electrodes in supercapacitors

NASA Astrophysics Data System (ADS)

Ho, Vinh; Zhou, Cheng; Kulinsky, Lawrence; Madou, Marc

2013-12-01

We present a novel fabrication method for constructing three-dimensional (3D) conducting microstructures based on the controlled-growth of electrodeposited polypyrrole (PPy) within a lithographically patterned photoresist layer. PPy thin films, post arrays, suspended planes supported by post arrays and multi-layered PPy structures were fabricated. The performance of supercapacitors based on 3D PPy electrodes doped with dodecylbenzene sulfonate (DBS-) and perchlorate (ClO4-) anions was studied using cyclic voltammetry and galvanostatic charge/discharge tests. The highest specific capacitance obtained from the multi-layered PPy(ClO4) electrodes was 401 ± 18 mF cm-2, which is roughly twice as high as the highest specific capacitance of PPy-based supercapacitor reported thus far. The increase in capacitance is the result of higher surface area per unit footprint achieved through the fabrication of multi-layered 3D electrodes.

A two-ply polymer-based flexible tactile sensor sheet using electric capacitance.

PubMed

Guo, Shijie; Shiraoka, Takahisa; Inada, Seisho; Mukai, Toshiharu

2014-01-29

Traditional capacitive tactile sensor sheets usually have a three-layered structure, with a dielectric layer sandwiched by two electrode layers. Each electrode layer has a number of parallel ribbon-like electrodes. The electrodes on the two electrode layers are oriented orthogonally and each crossing point of the two perpendicular electrode arrays makes up a capacitive sensor cell on the sheet. It is well known that compatibility between measuring precision and resolution is difficult, since decreasing the width of the electrodes is required to obtain a high resolution, however, this may lead to reduction of the area of the sensor cells, and as a result, lead to a low Signal/Noise (S/N) ratio. To overcome this problem, a new multilayered structure and related calculation procedure are proposed. This new structure stacks two or more sensor sheets with shifts in position. Both a high precision and a high resolution can be obtained by combining the signals of the stacked sensor sheets. Trial production was made and the effect was confirmed.

Nonlinear dynamics of capacitive charging and desalination by porous electrodes.

PubMed

Biesheuvel, P M; Bazant, M Z

2010-03-01

The rapid and efficient exchange of ions between porous electrodes and aqueous solutions is important in many applications, such as electrical energy storage by supercapacitors, water desalination and purification by capacitive deionization, and capacitive extraction of renewable energy from a salinity difference. Here, we present a unified mean-field theory for capacitive charging and desalination by ideally polarizable porous electrodes (without Faradaic reactions or specific adsorption of ions) valid in the limit of thin double layers (compared to typical pore dimensions). We illustrate the theory for the case of a dilute, symmetric, binary electrolyte using the Gouy-Chapman-Stern (GCS) model of the double layer, for which simple formulae are available for salt adsorption and capacitive charging of the diffuse part of the double layer. We solve the full GCS mean-field theory numerically for realistic parameters in capacitive deionization, and we derive reduced models for two limiting regimes with different time scales: (i) in the "supercapacitor regime" of small voltages and/or early times, the porous electrode acts like a transmission line, governed by a linear diffusion equation for the electrostatic potential, scaled to the RC time of a single pore, and (ii) in the "desalination regime" of large voltages and long times, the porous electrode slowly absorbs counterions, governed by coupled, nonlinear diffusion equations for the pore-averaged potential and salt concentration.

Nonlinear dynamics of capacitive charging and desalination by porous electrodes

NASA Astrophysics Data System (ADS)

Biesheuvel, P. M.; Bazant, M. Z.

2010-03-01

The rapid and efficient exchange of ions between porous electrodes and aqueous solutions is important in many applications, such as electrical energy storage by supercapacitors, water desalination and purification by capacitive deionization, and capacitive extraction of renewable energy from a salinity difference. Here, we present a unified mean-field theory for capacitive charging and desalination by ideally polarizable porous electrodes (without Faradaic reactions or specific adsorption of ions) valid in the limit of thin double layers (compared to typical pore dimensions). We illustrate the theory for the case of a dilute, symmetric, binary electrolyte using the Gouy-Chapman-Stern (GCS) model of the double layer, for which simple formulae are available for salt adsorption and capacitive charging of the diffuse part of the double layer. We solve the full GCS mean-field theory numerically for realistic parameters in capacitive deionization, and we derive reduced models for two limiting regimes with different time scales: (i) in the “supercapacitor regime” of small voltages and/or early times, the porous electrode acts like a transmission line, governed by a linear diffusion equation for the electrostatic potential, scaled to the RC time of a single pore, and (ii) in the “desalination regime” of large voltages and long times, the porous electrode slowly absorbs counterions, governed by coupled, nonlinear diffusion equations for the pore-averaged potential and salt concentration.

Discerning apical and basolateral properties of HT-29/B6 and IPEC-J2 cell layers by impedance spectroscopy, mathematical modeling and machine learning.

PubMed

Schmid, Thomas; Bogdan, Martin; Günzel, Dorothee

2013-01-01

Quantifying changes in partial resistances of epithelial barriers in vitro is a challenging and time-consuming task in physiology and pathophysiology. Here, we demonstrate that electrical properties of epithelial barriers can be estimated reliably by combining impedance spectroscopy measurements, mathematical modeling and machine learning algorithms. Conventional impedance spectroscopy is often used to estimate epithelial capacitance as well as epithelial and subepithelial resistance. Based on this, the more refined two-path impedance spectroscopy makes it possible to further distinguish transcellular and paracellular resistances. In a next step, transcellular properties may be further divided into their apical and basolateral components. The accuracy of these derived values, however, strongly depends on the accuracy of the initial estimates. To obtain adequate accuracy in estimating subepithelial and epithelial resistance, artificial neural networks were trained to estimate these parameters from model impedance spectra. Spectra that reflect behavior of either HT-29/B6 or IPEC-J2 cells as well as the data scatter intrinsic to the used experimental setup were created computationally. To prove the proposed approach, reliability of the estimations was assessed with both modeled and measured impedance spectra. Transcellular and paracellular resistances obtained by such neural network-enhanced two-path impedance spectroscopy are shown to be sufficiently reliable to derive the underlying apical and basolateral resistances and capacitances. As an exemplary perturbation of pathophysiological importance, the effect of forskolin on the apical resistance of HT-29/B6 cells was quantified.

Pseudocapacitive Electrodes Produced by Oxidant-Free Polymerization of Pyrrole between the Layers of 2D Titanium Carbide (MXene)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boota, Muhammad; Anasori, Babak; Voigt, Cooper

Heterocyclic pyrrole molecules are in situ aligned and polymerized in the ­absence of an oxidant between layers of the 2D Ti3C2Tx (MXene), resulting in high volumetric and gravimetric capacitances with capacitance retention of 92% after 25 000 cycles at a 100 mV s-1 scan rate.

Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer

NASA Astrophysics Data System (ADS)

Matsumoto, Tsubasa; Kato, Hiromitsu; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Yamasaki, Satoshi; Imura, Masataka; Ueda, Akihiro; Inokuma, Takao; Tokuda, Norio

2018-04-01

The electrical properties of Al2O3/p-type diamond (111) MOS capacitors were studied with the goal of furthering diamond-based semiconductor research. To confirm the formation of an inversion layer in the p-type diamond body, an n-type layer for use as a minority carrier injection layer was selectively deposited onto p-type diamond. To form the diamond MOS capacitors, Al2O3 was deposited onto OH-terminated diamond using atomic layer deposition. The MOS capacitor showed clear inversion capacitance at 10 Hz. The minority carrier injection from the n-type layer reached the inversion n-channel diamond MOS field-effect transistor (MOSFET). Using the high-low frequency capacitance method, the interface state density, D it, within an energy range of 0.1-0.5 eV from the valence band edge energy, E v, was estimated at (4-9) × 1012 cm-2 eV-1. However, the high D it near E v remains an obstacle to improving the field effect mobility for the inversion p-channel diamond MOSFET.

Contrasting conduction mechanisms of two internal barrier layer capacitors: (Mn, Nb)-doped SrTiO3 and CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Tsuji, Kosuke; Chen, Wei-Ting; Guo, Hanzheng; Lee, Wen-Hsi; Guillemet-Fritsch, Sophie; Randall, Clive A.

2017-02-01

The d.c. conduction is investigated in the two different types of internal barrier layer capacitors, namely, (Mn, Nb)-doped SrTiO3 (STO) and CaCu3Ti4O12 (CCTO). Scanning electron microscopy (SEM) and Capacitance - Voltage (C-V) analysis are performed to estimate the effective electric field at a grain boundary, EGB. Then, the d.c. conduction mechanism is discussed based on the J (Current density)-EGB characteristics. Three different conduction mechanisms are successively observed with the increase of EGB in both systems. In (Mn, Nb)-doped STO, non-linear J-EGB characteristics is temperature dependent at the intermediate EGB and becomes relatively insensitive to the temperature at the higher EGB. The J- EGB at each regime is explained by the Schottky emission (SE) followed by Fowler-Nordheim (F-N) tunneling. Based on the F-N tunneling, the breakdown voltage is then scaled by the function of the depletion layer thickness and Schottky barrier height at the average grain boundary. The proposed function shows a clear linear relationship with the breakdown. On the other hand, F-N tunneling was not observed in CCTO in our measurement. Ohmic, Poole-Frenkel (P-F), and SE are successively observed in CCTO. The transition point from P-F and SE depends on EGB and temperature. A charge-based deep level transient spectroscopy study reveals that 3 types of trap states exist in CCTO. The trap one with Et ˜ 0.65 eV below the conduction band is found to be responsible for the P-F conduction.

High voltage electrochemical double layer capacitors using conductive carbons as additives

NASA Astrophysics Data System (ADS)

Michael, M. S.; Prabaharan, S. R. S.

We describe here an interesting approach towards electrochemical capacitors (ECCs) using graphite materials (as being used as conductive additives in rechargeable lithium-ion battery cathodes) in a Li + containing organic electrolyte. The important result is that we achieved a voltage window of >4 V, which is rather large, compared to the standard window of 2.5 V for ordinary electric double layer capacitors (DLCs). The capacitor performance was evaluated by cyclic voltammetry (CV) and galvanostatic charge/discharge techniques. From charge-discharge studies of the symmetrical device (for instance, SFG6 carbon electrode), a specific capacitance of up to 14.5 F/g was obtained at 16 mA/cm 2 current rate and at a low current rate (3 mA/cm 2), a higher value was obtained (63 F/g). The specific capacitance decreased about 25% after 1000 cycles compared to the initial discharge process. The performances of these graphites are discussed in the light of both double layer capacitance (DLC) and pseudocapacitance (battery-like behavior). The high capacitance obtained was not only derived from the current-transient capacitive behavior but is also attributed to pseudocapacitance associated with some kind of faradaic reaction, which could probably occur due to Li + intercalation/deintercalation reactions into graphitic layers of the carbons used. The ac impedance (electrochemical impedances spectroscopy, EIS) measurements were also carried out to evaluate the capacitor parameters such as equivalent series resistance (ESR) and frequency dependent capacitance ( Cfreq). Cyclic voltammetry measurements were also performed to evaluate the cycling behavior of the carbon electrodes and the non-rectangular shaped voltammograms revealed the non-zero time constant [ τ( RC)≠0] confirming that the current contains a transient as well as steady-state components.

Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination

NASA Astrophysics Data System (ADS)

Bai, Zhiyuan; Du, Jiangfeng; Xin, Qi; Li, Ruonan; Yu, Qi

2018-02-01

We conducted a numerical analysis on high-K dielectric passivated AlGaN/GaN Schottky barrier diodes (HPG-SBDs) with a gated edge termination (GET). The reverse blocking characteristics were significantly enhanced without the stimulation of any parasitic effect by varying the dielectric thickness dge under the GET, thickness TP, and dielectric constant εr of the high-K passivation layer. The leakage current was reduced by increasing εr and decreasing dge. The breakdown voltage of the device was enhanced by increasing εr and TP. The highest breakdown voltage of 970 V and the lowest leakage current of 0.5 nA/mm were achieved under the conditions of εr = 80, TP = 800 nm, and dge = 10 nm. C-V simulation revealed that the HPG-SBDs induced no parasitic capacitance by comparing the integrated charges of the devices with different high-K dielectrics and different dge.

Surface Acoustic Wave Transducer Study.

DTIC Science & Technology

1978-05-01

B. Network Analysis 48 C. Experimental Results 53 D. Conc lusions 56 VI. Analysis of SAW Propagation in Layered Structures . . . 56 A. Introduction...unLdtrect1ona~ transducer and the associated matching networks . The capacity weighted transducer consists of a layered structure in which the lower...CAPACITIVELY WEIGHTED TRANSDUCERS A. Introduction The capacitive tap weight network transducer (CNN) has been pre- .5 sented in the interim as an

The effects of polar excipients transcutol and dexpanthenol on molecular mobility, permeability, and electrical impedance of the skin barrier.

PubMed

Björklund, Sebastian; Pham, Quoc Dat; Jensen, Louise Bastholm; Knudsen, Nina Østergaard; Nielsen, Lars Dencker; Ekelund, Katarina; Ruzgas, Tautgirdas; Engblom, Johan; Sparr, Emma

2016-10-01

In the development of transdermal and topical products it is important to understand how formulation ingredients interact with the molecular components of the upper layer of the skin, the stratum corneum (SC), and thereby influence its macroscopic barrier properties. The aim here was to investigate the effect of two commonly used excipients, transcutol and dexpanthenol, on the molecular as well as the macroscopic properties of the skin membrane. Polarization transfer solid-state NMR methods were combined with steady-state flux and impedance spectroscopy measurements to investigate how these common excipients influence the molecular components of SC and its barrier function at strictly controlled hydration conditions in vitro with excised porcine skin. The NMR results provide completely new molecular insight into how transcutol and dexpanthenol affect specific molecular segments of both SC lipids and proteins. The presence of transcutol or dexpanthenol in the formulation at fixed water activity results in increased effective skin permeability of the model drug metronidazole. Finally, impedance spectroscopy data show clear changes of the effective skin capacitance after treatment with transcutol or dexpanthenol. Based on the complementary data, we are able to draw direct links between effects on the molecular properties and on the macroscopic barrier function of the skin barrier under treatment with formulations containing transcutol or dexpanthenol. Copyright © 2016 Elsevier Inc. All rights reserved.

Multidimensional Cyclic Voltammetry Simulations of Pseudocapacitive Electrodes with a Conducting Nanorod Scaffold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mei, Bing-Ang; Li, Bin; Lin, Jie

This paper aims to understand the effect of nanoarchitecture on the performance of pseudocapacitive electrodes consisting of conducting scaffold coated with pseudocapacitive material. To do so, two-dimensional numerical simulations of ordered conducting nanorods coated with a thin film of pseudocapacitive material were performed. The simulations reproduced three-electrode cyclic voltammetry measurements based on a continuum model derived from first principles. Two empirical approaches commonly used experimentally to characterize the contributions of surface-controlled and diffusion-controlled charge storage mechanisms to the total current density with respect to scan rate were theoretically validated for the first time. Moreover, the areal capacitive capacitance, attributed tomore » EDL formation, remained constant and independent of electrode dimensions, at low scan rates. However, at high scan rates, it decreased with decreasing conducting nanorod radius and increasing pseudocapacitive layer thickness due to resistive losses. By contrast, the gravimetric faradaic capacitance, due to reversible faradaic reactions, decreased continuously with increasing scan rate and pseudocapacitive layer thickness but was independent of conducting nanorod radius. Note that the total gravimetric capacitance predicted numerically featured values comparable to experimental measurements. Finally, an optimum pseudocapacitive layer thickness that maximizes total areal capacitance was identified as a function of scan rate and confirmed by scaling analysis.« less

Multidimensional Cyclic Voltammetry Simulations of Pseudocapacitive Electrodes with a Conducting Nanorod Scaffold

DOE PAGES

Mei, Bing-Ang; Li, Bin; Lin, Jie; ...

2017-10-27

This paper aims to understand the effect of nanoarchitecture on the performance of pseudocapacitive electrodes consisting of conducting scaffold coated with pseudocapacitive material. To do so, two-dimensional numerical simulations of ordered conducting nanorods coated with a thin film of pseudocapacitive material were performed. The simulations reproduced three-electrode cyclic voltammetry measurements based on a continuum model derived from first principles. Two empirical approaches commonly used experimentally to characterize the contributions of surface-controlled and diffusion-controlled charge storage mechanisms to the total current density with respect to scan rate were theoretically validated for the first time. Moreover, the areal capacitive capacitance, attributed tomore » EDL formation, remained constant and independent of electrode dimensions, at low scan rates. However, at high scan rates, it decreased with decreasing conducting nanorod radius and increasing pseudocapacitive layer thickness due to resistive losses. By contrast, the gravimetric faradaic capacitance, due to reversible faradaic reactions, decreased continuously with increasing scan rate and pseudocapacitive layer thickness but was independent of conducting nanorod radius. Note that the total gravimetric capacitance predicted numerically featured values comparable to experimental measurements. Finally, an optimum pseudocapacitive layer thickness that maximizes total areal capacitance was identified as a function of scan rate and confirmed by scaling analysis.« less

Towards understanding the effects of van der Waals strengths on the electric double-layer structures and capacitive behaviors

NASA Astrophysics Data System (ADS)

Yang, Huachao; Bo, Zheng; Yang, Jinyuan; Yan, Jianhua; Cen, Kefa

2017-10-01

Solid-liquid interactions are considered to play a crucial role in charge storage capability of electric double-layer capacitors (EDLCs). In this work, effects of van der Waals (VDW) strengths on the EDL structures and capacitive performances within two representative electrolytes of solvated aqueous solutions and solvent-free ionic liquids are illuminated by molecular dynamics simulations. Single crystalline metals with similar lattice constant but diverse VDW potentials are employed as electrodes. Upon enhancing VDW strengths, capacitance of aqueous electrolytes first increases conspicuously by ∼34.0% and then descends, manifesting a non-monotonic trend, which goes beyond traditional perspectives. Such unusual observation is interpreted by the excluded-volume effects stemmed from ion-solvent competitions. Stimulated by predominant coulombic interactions, more ions are aggregated at the interface despite of the increasing VDW potentials, facilitating superior screening efficiency and capacitance. However, further enhancing strengths preferentially attracts more solvents instead of ions to the electrified surface, which in turn strikingly repels ions from Helmholtz layers, deteriorating electrode capacitance. An essentially similar feather is also recognized for ionic liquids, while the corresponding mechanisms are prominently ascribed to the suppressed ionic separations issued from cation-anion competitions. We highlight that constructing electrode materials with a moderate-hydrophilicity could further advance the performances of EDLCs.

ZnS/Al2S3 Layer as a Blocking Layer in Quantum Dot Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Vafapoor, Borzoo; Fathi, Davood; Eskandari, Mehdi

2017-12-01

In this research, the effect of treatment of the CdS/CdSe sensitized ZnO photoanode by ZnS, Al2S3, and ZnS/Al2S3 nanoparticles as a barrier layer on the performance of quantum dot sensitized solar cell is investigated. Current density-voltage (J-V) characteristics show that cell efficiency is enhanced from 3.62% to 4.82% with treatment of a CdS/CdSe/ZnS sensitized ZnO photoanode by Al2S3 nanoparticles. In addition, short- circuit current density (J sc) is increased from 11.5 mA/cm2 to 14.8 mA/cm2. The results extracted from electrochemical impedance spectroscopy indicate that charge transfer resistance (R ct) in photoanode/electrolyte interfaces decreases with deposition of Al2S3 nanoparticles on CdS/CdSe/ZnS sensitized ZnO photoanodes, while the chemical capacitance of photoanode (C μ ) and electron lifetime (t n) increase. Also, results revealed that cell performance is considerably decreased with the treatment of the AL2S3 blocking layer incorporated between ZnO nanorods and CdS/CdSe QDs.

ZnS/Al2S3 Layer as a Blocking Layer in Quantum Dot Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Vafapoor, Borzoo; Fathi, Davood; Eskandari, Mehdi

2018-03-01

In this research, the effect of treatment of the CdS/CdSe sensitized ZnO photoanode by ZnS, Al2S3, and ZnS/Al2S3 nanoparticles as a barrier layer on the performance of quantum dot sensitized solar cell is investigated. Current density-voltage ( J- V) characteristics show that cell efficiency is enhanced from 3.62% to 4.82% with treatment of a CdS/CdSe/ZnS sensitized ZnO photoanode by Al2S3 nanoparticles. In addition, short- circuit current density ( J sc) is increased from 11.5 mA/cm2 to 14.8 mA/cm2. The results extracted from electrochemical impedance spectroscopy indicate that charge transfer resistance ( R ct) in photoanode/electrolyte interfaces decreases with deposition of Al2S3 nanoparticles on CdS/CdSe/ZnS sensitized ZnO photoanodes, while the chemical capacitance of photoanode ( C μ ) and electron lifetime ( t n) increase. Also, results revealed that cell performance is considerably decreased with the treatment of the AL2S3 blocking layer incorporated between ZnO nanorods and CdS/CdSe QDs.

Ionic Liquids as Electrolytes for Electrochemical Double-Layer Capacitors: Structures that Optimize Specific Energy.

PubMed

Mousavi, Maral P S; Wilson, Benjamin E; Kashefolgheta, Sadra; Anderson, Evan L; He, Siyao; Bühlmann, Philippe; Stein, Andreas

2016-02-10

Key parameters that influence the specific energy of electrochemical double-layer capacitors (EDLCs) are the double-layer capacitance and the operating potential of the cell. The operating potential of the cell is generally limited by the electrochemical window of the electrolyte solution, that is, the range of applied voltages within which the electrolyte or solvent is not reduced or oxidized. Ionic liquids are of interest as electrolytes for EDLCs because they offer relatively wide potential windows. Here, we provide a systematic study of the influence of the physical properties of ionic liquid electrolytes on the electrochemical stability and electrochemical performance (double-layer capacitance, specific energy) of EDLCs that employ a mesoporous carbon model electrode with uniform, highly interconnected mesopores (3DOm carbon). Several ionic liquids with structurally diverse anions (tetrafluoroborate, trifluoromethanesulfonate, trifluoromethanesulfonimide) and cations (imidazolium, ammonium, pyridinium, piperidinium, and pyrrolidinium) were investigated. We show that the cation size has a significant effect on the electrolyte viscosity and conductivity, as well as the capacitance of EDLCs. Imidazolium- and pyridinium-based ionic liquids provide the highest cell capacitance, and ammonium-based ionic liquids offer potential windows much larger than imidazolium and pyridinium ionic liquids. Increasing the chain length of the alkyl substituents in 1-alkyl-3-methylimidazolium trifluoromethanesulfonimide does not widen the potential window of the ionic liquid. We identified the ionic liquids that maximize the specific energies of EDLCs through the combined effects of their potential windows and the double-layer capacitance. The highest specific energies are obtained with ionic liquid electrolytes that possess moderate electrochemical stability, small ionic volumes, low viscosity, and hence high conductivity, the best performing ionic liquid tested being 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide.

Capacitance-based damage detection sensing for aerospace structural composites

NASA Astrophysics Data System (ADS)

Bahrami, P.; Yamamoto, N.; Chen, Y.; Manohara, H.

2014-04-01

Damage detection technology needs improvement for aerospace engineering application because detection within complex composite structures is difficult yet critical to avoid catastrophic failure. Damage detection is challenging in aerospace structures because not all the damage detection technology can cover the various defect types (delamination, fiber fracture, matrix crack etc.), or conditions (visibility, crack length size, etc.). These defect states are expected to become even more complex with future introduction of novel composites including nano-/microparticle reinforcement. Currently, non-destructive evaluation (NDE) methods with X-ray, ultrasound, or eddy current have good resolutions (< 0.1 mm), but their detection capabilities is limited by defect locations and orientations and require massive inspection devices. System health monitoring (SHM) methods are often paired with NDE technologies to signal out sensed damage, but their data collection and analysis currently requires excessive wiring and complex signal analysis. Here, we present a capacitance sensor-based, structural defect detection technology with improved sensing capability. Thin dielectric polymer layer is integrated as part of the structure; the defect in the structure directly alters the sensing layer's capacitance, allowing full-coverage sensing capability independent of defect size, orientation or location. In this work, capacitance-based sensing capability was experimentally demonstrated with a 2D sensing layer consisting of a dielectric layer sandwiched by electrodes. These sensing layers were applied on substrate surfaces. Surface indentation damage (~1mm diameter) and its location were detected through measured capacitance changes: 1 to 250 % depending on the substrates. The damage detection sensors are light weight, and they can be conformably coated and can be part of the composite structure. Therefore it is suitable for aerospace structures such as cryogenic tanks and rocket fairings for example. The sensors can also be operating in space and harsh environment such as high temperature and vacuum.

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Ali, Mayahsa M.; Haris, Norshakila; Kyabaggu, Peter B. K.; Rezazadeh, Ali A.

2017-05-01

This study focuses on the characterization of two 0.5 μm gate-length double heterojunction AlGaAs/InGaAs/GaAs pHEMTs using pre and post fabricated vertical oriented multilayer 3D monolithic microwave integrated (MMIC) circuit technology. The effects of the presence of 3D components above the active layer were accomplished by means of capacitance-voltage measurement, on-wafer DC and S-parameter measurements and two-tone intermodulation distortion measurement. The barrier height, donor concentration in the barrier layer, existing two-dimensional electron gas, output current, off and on state leakage, transconductance, cut-off frequency, small signal model parameters, gain, minimum noise figures and nonlinear distortion behavior reveals no significant performance degradation. Furthermore the fundamental device properties such as the depletion depth d, the sheet charge densities of the 2-DEG, n s, filed dependent mobility, μ, and the effective carrier velocity, v eff is not much affected due to multilayer processing. Less than 5% changes in magnitude of the device parameters are realized between the pre and post fabricated multilayer 3D MMIC technology. These effective comparisons of the both device are useful for future designs and optimizations of multilayer vertical stacked 3D MMICs.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

PubMed

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-12-14

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

PubMed Central

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-01-01

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

Enhancing Graphene Capacitance by Nitrogen: Effects of Doping Configuration and Concentration

DOE PAGES

Zhan, Cheng; Cummings, Peter; Jiang, De-en

2016-01-08

Recent experiments have shown that nitrogen doping enhances capacitance in carbon electrode supercapacitors. However, a detailed study of the effect of N-doping on capacitance is still lacking. In this paper, we study the doping concentration and the configuration effect on the electric double-layer (EDL) capacitance, quantum capacitance, and total capacitance. It is found that pyridinic and graphitic nitrogens can increase the total capacitance by increasing quantum capacitance, but pyrrolic configuration limits the total capacitance due to its much lower quantum capacitance than the other two configurations. We also find that, unlike the graphitic and pyridinic nitrogens, the pyrrolic configuration's quantummore » capacitance does not depend on the nitrogen concentration, which may explain why some capacitance versus voltage measurements of N-doped graphene exhibit a V-shaped curve similar to that of undoped graphene. Our investigation provides a deeper understanding of the capacitance enhancement of the N-doping effect in carbon electrodes and suggests a potentially effective way to optimize the capacitance by controlling the type of N-doping.« less

Colossal dielectric constant and relaxation behaviors in Pr:SrTiO3 ceramics

NASA Astrophysics Data System (ADS)

Liu, Cheng; Liu, Peng; Zhou, Jian-ping; He, Ying; Su, Li-na; Cao, Lei; Zhang, Huai-wu

2010-05-01

Sr1-xPrxTiO3 ceramics (0.00≤x≤0.03) were prepared by a traditional solid-state reaction method. Two relaxation processes (marked as A and B) of the Sr0.09Pr0.01TiO3 ceramics were investigated by analyzing the Ea values obtained from the Arrhenius law. Colossal dielectric constant (CDC) was first obtained in Sr0.09Pr0.01TiO3 ceramics, whose permittivity was up to 3000 (1 kHz, room temperature), greater than that of pure SrTiO3 ceramics and samples with more Pr addition (x =0.02 and 0.03). This CDC behavior was related to the internal barrier layer capacitance mechanism.

Low temperature sintered giant dielectric permittivity CaCu3Ti4O12 sol-gel synthesized nanoparticle capacitors

NASA Astrophysics Data System (ADS)

Puli, Venkata Sreenivas; Adireddy, Shiva; Kothakonda, Manish; Elupula, Ravinder; Chrisey, Douglas B.

This paper reports on synthesis of polycrystalline complex perovskite CaCu3Ti4O12 (as CCTO) ceramic powders prepared by a sol-gel auto combustion method at different sintering temperatures and sintering times, respectively. The effect of sintering time on the structure, morphology, dielectric and electrical properties of CCTO ceramics is investigated. Tuning the electrical properties via different sintering times is demonstrated for ceramic samples. X-ray diffraction (XRD) studies confirm perovskite-like structure at room temperature. Abnormal grain growth is observed for ceramic samples. Giant dielectric permittivity was realized for CCTO ceramics. High dielectric permittivity was attributed to the internal barrier layer capacitance (IBLC) model associated with the Maxwell-Wagner (MW) polarization mechanism.

The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes

NASA Astrophysics Data System (ADS)

Karabulut, Abdulkerim; Orak, İkram; Türüt, Abdulmecit

2018-06-01

In present work, photocurrent, current-voltage (I-V) and capacitance/conductance-voltage-frequency (C/G-V-f) measurements were analyzed for the photodiode and diode parameters of Al/TiO2/p-Si structure. The TiO2 thin film structure was deposited on p-Si by using atomic layer deposition technique (ALD) and its thickness was about 10 nm. The surface morphology of TiO2 coated on p-Si structure was observed via atomic force microscope (AFM). Barrier height (Φb) and ideality factor (n) values of device were found to be 0.80 eV, 0.70 eV, 0.56 eV and 1.04, 2.24, 10.27 under dark, 10 and 100 mW/cm2, respectively. Some photodiodes parameters such as fill factor (FF), power efficiency (%η), open circuit voltage (Voc), short circuit current (Isc) were obtained from I-V measurement under different light intensity. FF and η were accounted 49.2, 39,0 and 0.05, 0.45 under 10 and 100 mW/cm2 light power intensity, respectively. C-2-V graph was plotted from C-V-f measurements and zero bias voltage (V0), donor concentration (Nd), Fermi energy (EF), barrier height (Φb) and maximum electric field (Em) were determined from C-2-V data for different frequencies. The electrical and photocurrent values demonstrated that it can be used for photodiode, photo detector and photo sensing applications.

The influence of hard-baking temperature applied for SU8 sensor layer on the sensitivity of capacitive chemical sensor

NASA Astrophysics Data System (ADS)

Klanjšek Gunde, Marta; Hauptman, Nina; Maček, Marijan; Kunaver, Matjaž

2009-06-01

SU8, the near-UV photosensitive epoxy-based polymer was used as a sensor layer in the capacitive chemical sensor, ready for integration with a generic double-metal CMOS technology. It was observed that the response of the sensor slowly increases with the temperature applied in hard-baking process as long as it remains below 300°C. At this temperature the response of the sensor abruptly increases and becomes almost threefold. It was shown that fully crosslinked structure of the sensor layer becomes opened and disordered when the sensor is hard-baked at temperatures between 300°C and 320°C, that is, still well below the degradation temperature of the polymer. These changes in chemical structure were analyzed by Fourier-transform infrared spectroscopy. The temperature-dependent changes of the sensor layer structure enable one to prepare a combination of capacitive chemical sensors with good discrimination between some volatile organic compounds.

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO{sub 2} thin films grown by the atomic layer deposition technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kassmi, M.; LMOP, El Manar University, Tunis 2092; Pointet, J.

2016-06-28

Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO{sub 2} rutile films which are deposited on RuO{sub 2} by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz–100 kHz range, for ac electric fields up to 1 MV{sub rms}/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreasesmore » the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MV{sub rms}/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.« less

Interface state density of free-standing GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Faraz, S. M.; Ashraf, H.; Imran Arshad, M.; Hageman, P. R.; Asghar, M.; Wahab, Q.

2010-09-01

Schottky diodes were fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types. Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au, respectively. The Schottky diode fabricated on n-GaN exhibited double barriers with values of 0.9 and 0.6 eV and better performance in the rectification factor together with reverse and forward currents with an ideality factor of 1.8. The barrier height for the p-GaN Schottky diode is 0.6 eV with an ideality factor of 4.16. From the capacitance-voltage (C-V) measurement, the net doping concentration of n-GaN is 4 × 1017 cm-3, resulting in a lower reverse breakdown of around -12 V. The interface state density (NSS) as a function of EC-ESS is found to be in the range 4.23 × 1012-3.87 × 1011 eV-1 cm-2 (below the conduction band) from Ec-0.90 to EC-0.99. Possible reasons responsible for the low barrier height and high ideality factor have been addressed.

Simulation design of high reverse blocking high-K/low-K compound passivation AlGaN/GaN Schottky barrier diode with gated edge termination

NASA Astrophysics Data System (ADS)

Bai, Zhiyuan; Du, Jiangfeng; Xin, Qi; Li, Ruonan; Yu, Qi

2017-11-01

In this paper, a novel high-K/low-K compound passivation AlGaN/GaN Schottky Barrier Diode (CPG-SBD) is proposed to improve the off-state characteristics of AlGaN/GaN schottky barrier diode with gated edge termination (GET-SBD) by adding low-K blocks in to the high-K passivation layer. The reverse leakage current of CPG-SBD can be reduced to 1.6 nA/mm by reducing the thickness of high-K dielectric under GET region to 5 nm, while the forward voltage and on-state resistance keep 1 V and 3.8 Ω mm, respectively. Breakdown voltage of CPG-SBDs can be improved by inducing discontinuity of the electric field at the high-K/low-K interface. The breakdown voltage of the optimized CPG-SBD with 4 blocks of low-K can reach 1084 V with anode to cathode distance of 5 μm yielding a high FOM of 5.9 GW/cm2. From the C-V simulation results, CPG-SBDs induce no parasitic capacitance by comparison of the GET-SBDs.

Enhanced Capacitance of Hybrid Layered Graphene/Nickel Nanocomposite for Supercapacitors

NASA Astrophysics Data System (ADS)

Mohd Zaid, Norsaadatul Akmal; Idris, Nurul Hayati

2016-08-01

In this work, Ni nanoparticles were directly decorated on graphene (G) nanosheets via mechanical ball milling. Based on transmission electron microscopy observations, the Ni nanoparticles were well dispersed and attached to the G nanosheet without any agglomerations. Electrochemical results showed that the capacitance of a G/Ni nanocomposite was 275 F g-1 at a current density of 2 A g-1, which is higher than the capacitance of bare G (145 F g-1) and bare Ni (3 F g-1). The G/Ni electrode also showed superior performance at a high current density, exhibiting a capacitance of 190 F g-1 at a current density of 5 A g-1 and a capacitance of 144 F g-1 at a current density of 10 A g-1. The equivalent series resistance for G/Ni nanocomposites also decreased. The enhanced performance of this hybrid supercapacitor is best described by the synergistic effect, i.e. dual charge-storage mechanism, which is demonstrated by electrical double layer and pseudocapacitance materials. Moreover, a high specific surface area and electrical conductivity of the materials enhanced the capacitance. These results indicate that the G/Ni nanocomposite is a potential supercapacitor.

Enhanced Capacitance of Hybrid Layered Graphene/Nickel Nanocomposite for Supercapacitors.

PubMed

Mohd Zaid, Norsaadatul Akmal; Idris, Nurul Hayati

2016-08-24

In this work, Ni nanoparticles were directly decorated on graphene (G) nanosheets via mechanical ball milling. Based on transmission electron microscopy observations, the Ni nanoparticles were well dispersed and attached to the G nanosheet without any agglomerations. Electrochemical results showed that the capacitance of a G/Ni nanocomposite was 275 F g(-1) at a current density of 2 A g(-1), which is higher than the capacitance of bare G (145 F g(-1)) and bare Ni (3 F g(-1)). The G/Ni electrode also showed superior performance at a high current density, exhibiting a capacitance of 190 F g(-1) at a current density of 5 A g(-1) and a capacitance of 144 F g(-1) at a current density of 10 A g(-1). The equivalent series resistance for G/Ni nanocomposites also decreased. The enhanced performance of this hybrid supercapacitor is best described by the synergistic effect, i.e. dual charge-storage mechanism, which is demonstrated by electrical double layer and pseudocapacitance materials. Moreover, a high specific surface area and electrical conductivity of the materials enhanced the capacitance. These results indicate that the G/Ni nanocomposite is a potential supercapacitor.

Segregation and trapping of oxygen vacancies near the SrTiO 3Σ3 (112) [110] tilt grain boundary

DOE PAGES

Liu, Bin; Cooper, Valentino R.; Zhang, Yanwen; ...

2015-03-21

In nanocrystalline materials, structural discontinuities at grain boundaries (GBs) and the segregation of point defects to these GBs play a key role in defining the structural stability of a material, as well as its macroscopic electrical/mechanical properties. In this study, the segregation of oxygen vacancies near the Σ3 (1 1 2) [¯110] tilt GB in SrTiO 3 is explored using density functional theory. We find that oxygen vacancies segregate toward the GB, preferring to reside within the next nearest-neighbor layer. This oxygen vacancy segregation is found to be crucial for stabilizing this tilt GB. Furthermore, we find that the migrationmore » barriers of oxygen vacancies diffusing toward the first nearest-neighbor layer of the GB are low, while those away from this layer are very high. Furthermore, the segregation and trapping of the oxygen vacancies in the first nearest-neighbor layer of GBs are attributed to the large local distortions, which can now accommodate the preferred sixfold coordination of Ti. These results suggest that the electronic, transport, and capacitive properties of SrTiO 3 can be engineered through the control of GB structure and grain size or layer thickness.« less

The effects of dielectric decrement and finite ion size on differential capacitance of electrolytically gated graphene

NASA Astrophysics Data System (ADS)

Daniels, Lindsey; Scott, Matthew; Mišković, Z. L.

2018-06-01

We analyze the effects of dielectric decrement and finite ion size in an aqueous electrolyte on the capacitance of a graphene electrode, and make comparisons with the effects of dielectric saturation combined with finite ion size. We first derive conditions for the cross-over from a camel-shaped to a bell-shaped capacitance of the diffuse layer. We show next that the total capacitance is dominated by a V-shaped quantum capacitance of graphene at low potentials. A broad peak develops in the total capacitance at high potentials, which is sensitive to the ion size with dielectric saturation, but is stable with dielectric decrement.

Capacitive Biosensors and Molecularly Imprinted Electrodes.

PubMed

Ertürk, Gizem; Mattiasson, Bo

2017-02-17

Capacitive biosensors belong to the group of affinity biosensors that operate by registering direct binding between the sensor surface and the target molecule. This type of biosensors measures the changes in dielectric properties and/or thickness of the dielectric layer at the electrolyte/electrode interface. Capacitive biosensors have so far been successfully used for detection of proteins, nucleotides, heavy metals, saccharides, small organic molecules and microbial cells. In recent years, the microcontact imprinting method has been used to create very sensitive and selective biorecognition cavities on surfaces of capacitive electrodes. This chapter summarizes the principle and different applications of capacitive biosensors with an emphasis on microcontact imprinting method with its recent capacitive biosensor applications.

Ac Conduction in Mixed Oxides Al-In2O3-SnO2-Al Structure Deposited by Co-Evaporation

NASA Astrophysics Data System (ADS)

Anwar, M.; Siddiqi, S. A.; Ghauri, I. M.

Conductivity-frequency and capacitance-frequency characteristics of mixed oxides Al-In2O3-SnO2-Al structure are examined to elicit any correlation with the conduction mechanisms most often observed in thin film work. The existence of Schottky barriers is believed to be due to a strong donor band in the insulator established during the vacuum evaporation when a layer of mixed oxides In2O3-SnO2 system is sandwiched between two metal electrodes. Low values of activation energy at low temperatures indicate that the transport of the carriers between localized states is mainly due to electronic hopping over the barrier separating the two nearest neighbor sites. The increase in the formation of ionized donors with increase in temperature during electrical measurements indicates that electronic part of the conductivity is higher than the ionic part. The initial increase in conductivity with increase in Sn content in In2O3 lattice is caused by the Sn atom substitution of In atom, giving out one extra electron. The decrease in electrical conductivity above the critical Sn content (10 mol% SnO2) is caused by the defects formed by Sn atoms, which act as carrier traps rather than electron donors. The increase in electrical conductivity with film thickness is caused by the increase in free carriers density, which is generated by oxygen vacancy acting as two electron donor. The increase in conductivity with substrate and annealing temperatures is due to either the severe deficiency of oxygen, which deteriorates the film properties and reduces the mobility of the carriers or to the diffusion of Sn atoms from interstitial locations into the In cation sites and formation of indium species of lower oxidation state (In2+). Calculations of C and σac from tan δ measurements suggest that there is some kind of space-charge polarization in the material, caused by the storage of carriers at the electrodes. Capacitance decreases not only with the rise of frequency but also with the lowering of temperature. At low temperatures the major contribution to capacitance arises from the ionic polarization, however, with the increase of temperature the contribution from orientation polarization would considerably increase. The decrease in capacitance with the increase in frequency may be attributed to interfacial polarization.

A high performance flexible all solid state supercapacitor based on the MnO2 sphere coated macro/mesoporous Ni/C electrode and ionic conducting electrolyte.

PubMed

Zhi, Jian; Reiser, Oliver; Wang, Youfu; Hu, Aiguo

2016-06-09

A high contact resistance between the active materials and the current collector, a low ionic conductivity of the gel electrolyte, and an impenetrable electrode structure are the three major barriers which greatly limit the capacitance of MnO2 in solid state supercapacitors. As a potential solution to these problems, in this work we report a novel electrode for solid state supercapacitors, based on a ternary system composed of hierarchical MnO2 spheres as the active material, macroporous Ni foam as gel penetrable skeletons and an ordered mesoporous carbon (OMC) membrane as the charge-transport accelerating layer. By employing butyl-3-methylimidazolium chloride (BMIMCl) modified gels as the ionic conducting electrolyte, the utilization efficiency of MnO2 on the specific capacitance was enhanced up to 88% of the theoretical value, delivering a volumetric capacitance of 81 F cm(-3), which is the highest value among MnO2 based solid state supercapacitors. Moreover, such a flexible device exhibits exceptional volumetric energy and power density (6.6 Wh L(-1) and 549 W L(-1), based on the whole device volume) combined with a small capacity loss of 8.5% after 6000 cycles under twisting. These encouraging findings unambiguously overcome the energy bottleneck of MnO2 in solid state supercapacitors, and open up a new application of macro/mesoporous materials in flexible devices.

MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit.

PubMed

Liu, Xingqiang; Liang, Renrong; Gao, Guoyun; Pan, Caofeng; Jiang, Chunsheng; Xu, Qian; Luo, Jun; Zou, Xuming; Yang, Zhenyu; Liao, Lei; Wang, Zhong Lin

2018-05-21

The Boltzmann distribution of electrons induced fundamental barrier prevents subthreshold swing (SS) from less than 60 mV dec -1 at room temperature, leading to high energy consumption of MOSFETs. Herein, it is demonstrated that an aggressive introduction of the negative capacitance (NC) effect of ferroelectrics can decisively break the fundamental limit governed by the "Boltzmann tyranny". Such MoS 2 negative-capacitance field-effect transistors (NC-FETs) with self-aligned top-gated geometry demonstrated here pull down the SS value to 42.5 mV dec -1 , and simultaneously achieve superior performance of a transconductance of 45.5 μS μm and an on/off ratio of 4 × 10 6 with channel length less than 100 nm. Furthermore, the inserted HfO 2 layer not only realizes a stable NC gate stack structure, but also prevents the ferroelectric P(VDF-TrFE) from fatigue with robust stability. Notably, the fabricated MoS 2 NC-FETs are distinctly different from traditional MOSFETs. The on-state current increases as the temperature decreases even down to 20 K, and the SS values exhibit nonlinear dependence with temperature due to the implementation of the ferroelectric gate stack. The NC-FETs enable fundamental applications through overcoming the Boltzmann limit in nanoelectronics and open up an avenue to low-power transistors needed for many exciting long-endurance portable consumer products. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DNA Immobilization and Hybridization Detection by the Intrinsic Molecular Charge Using Capacitive Field-Effect Sensors Modified with a Charged Weak Polyelectrolyte Layer.

PubMed

Bronder, Thomas S; Poghossian, Arshak; Scheja, Sabrina; Wu, Chunsheng; Keusgen, Michael; Mewes, Dieter; Schöning, Michael J

2015-09-16

Miniaturized setup, compatibility with advanced micro- and nanotechnologies, and ability to detect biomolecules by their intrinsic molecular charge favor the semiconductor field-effect platform as one of the most attractive approaches for the development of label-free DNA chips. In this work, a capacitive field-effect EIS (electrolyte-insulator-semiconductor) sensor covered with a layer-by-layer prepared, positively charged weak polyelectrolyte layer of PAH (poly(allylamine hydrochloride)) was used for the label-free electrical detection of DNA (deoxyribonucleic acid) immobilization and hybridization. The negatively charged probe single-stranded DNA (ssDNA) molecules were electrostatically adsorbed onto the positively charged PAH layer, resulting in a preferentially flat orientation of the ssDNA molecules within the Debye length, thus yielding a reduced charge-screening effect and a higher sensor signal. Each sensor-surface modification step (PAH adsorption, probe ssDNA immobilization, hybridization with complementary target DNA (cDNA), reducing an unspecific adsorption by a blocking agent, incubation with noncomplementary DNA (ncDNA) solution) was monitored by means of capacitance-voltage and constant-capacitance measurements. In addition, the surface morphology of the PAH layer was studied by atomic force microscopy and contact-angle measurements. High hybridization signals of 34 and 43 mV were recorded in low-ionic strength solutions of 10 and 1 mM, respectively. In contrast, a small signal of 4 mV was recorded in the case of unspecific adsorption of fully mismatched ncDNA. The density of probe ssDNA and dsDNA molecules as well as the hybridization efficiency was estimated using the experimentally measured DNA immobilization and hybridization signals and a simplified double-layer capacitor model. The results of field-effect experiments were supported by fluorescence measurements, verifying the DNA-immobilization and hybridization event.

Low-Noise Large-Area Photoreceivers with Low Capacitance Photodiodes

NASA Technical Reports Server (NTRS)

Joshi, Abhay M. (Inventor); Datta, Shubhashish (Inventor)

2013-01-01

A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.

MEMS for vibration energy harvesting

NASA Astrophysics Data System (ADS)

Li, Lin; Zhang, Yangjian; San, Haisheng; Guo, Yinbiao; Chen, Xuyuan

2008-03-01

In this paper, a capacitive vibration-to-electrical energy harvester was designed. An integrated process flow for fabricating the designed capacitive harvester is presented. For overcoming the disadvantage of depending on external power source in capacitive energy harvester, two parallel electrodes with different work functions are used as the two electrodes of the capacitor to generate a build-in voltage for initially charging the capacitor. The device is a sandwich structure of silicon layer in two glass layers with area of about 1 cm2. The silicon structure is fabricated by using silicon-on-insulator (SOI) wafer. The glass wafers are anodic bonded on to both sides of the SOI wafer to create a vacuum sealed package.

Pre-selection by double layer density gradient centrifugation improves the fertilising capacity of frozen-thawed, capacitated stallion sperm.

PubMed

Morató, Roser; Soares, Juleide M De Souza; Orero, Guifré; Mogas, Teresa; Miró, Jordi

2013-06-01

The effect of combining double layer density gradient centrifugation (DL-DGC) with different capacitation treatments on the fertilising capacity of frozen-thawed stallion sperm was examined via a heterologous assay involving in vitro-matured, zona pellucida-free bovine oocytes. In a first experiment, aliquots of frozen-thawed stallion sperm were subjected to one of five capacitation treatments without DL-DGC - ionomycin at 1.0μM, 0.1μM, 0.05μM or 0.01μM, or caffeine at 200μg/mL. The fertilising capacity of the semen was then assessed at 18h by staining the above oocytes with 4,6-diamidino-2-phenylindole (DAPI) and examining for sperm penetration, the number of penetrated spermatozoa per oocyte, and male pronucleus formation. In a second experiment, aliquots of frozen-thawed stallion sperm were subjected to DL-DGC selection - or not - and then further subjected to the two best capacitation treatments (0.1μM and 0.05μM ionomycin). The fertilising capacity of the semen was then determined as above. The DL-DGC/capacitated sperm samples showed the highest mean penetration rates: 24.16% following capacitation with 0.1μM ionomycin, and 12.21% following capacitation with 0.05μM ionomycin. The capacitated but non-DL-DGC-selected sperm returned significantly lower values: 6.26% and 7.02% for the same ionomycin treatments respectively. These findings suggest that combining DL-DGC selection with ionomycin capacitation improves the fertilising capacity of frozen-thawed stallion sperm. Copyright © 2013 Elsevier B.V. All rights reserved.

Effects of Humidity and Temperature on Orange Dye-Based Organic Field Effect Transistors Fabricated at Different Gravity

NASA Astrophysics Data System (ADS)

Fatima, N.; Ahmed, M. M.; Karimov, Kh. S.

2017-11-01

This study reports the fabrication of organic field effect transistors (OFETs) using 3-[ethyl[4-[(4-nitrophenyl)azo]phenyl]amino]propanenitrile, usually known as Orange-Dye 25 (OD) and its composite with sugar. The study investigated the heat- and humidity-dependent electrical characteristics of the fabricated devices. Fabrication was carried out from the aqueous solution of the materials using different gravity conditions, i.e., at positive (normal) gravity (+1 g) and at negative gravity (-1 g). A thin layer (10-15 μm) of OD or OD:sugar was deposited by drop-casting on pre-fabricated drain and source silver (Ag) electrodes having 30 μm separation and 2 mm length followed by aluminum (Al) thermal evaporation to achieve a Schottky barrier. Devices fabricated using OD at -1 g were more sensitive in capacitance-temperature and impedance-humidity relationships than those fabricated at +1 g. Moreover, OFETs fabricated at -1 g using OD:sugar offered capacitance-temperature sensitivity much higher than the devices fabricated at +1 g. It has been observed that, in the drop-casting method, the properties of OFETs are dependent upon gravity as well as the solution composition employed for channel definition.

Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

PubMed Central

Ki Min, Bok; Kim, Seong K.; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

2015-01-01

Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer. PMID:26530817

Electrical double layers and differential capacitance in molten salts from density functional theory

DOE PAGES

Frischknecht, Amalie L.; Halligan, Deaglan O.; Parks, Michael L.

2014-08-05

Classical density functional theory (DFT) is used to calculate the structure of the electrical double layer and the differential capacitance of model molten salts. The DFT is shown to give good qualitative agreement with Monte Carlo simulations in the molten salt regime. The DFT is then applied to three common molten salts, KCl, LiCl, and LiKCl, modeled as charged hard spheres near a planar charged surface. The DFT predicts strong layering of the ions near the surface, with the oscillatory density profiles extending to larger distances for larger electrostatic interactions resulting from either lower temperature or lower dielectric constant. Inmore » conclusion, overall the differential capacitance is found to be bell-shaped, in agreement with recent theories and simulations for ionic liquids and molten salts, but contrary to the results of the classical Gouy-Chapman theory.« less

Discerning Apical and Basolateral Properties of HT-29/B6 and IPEC-J2 Cell Layers by Impedance Spectroscopy, Mathematical Modeling and Machine Learning

PubMed Central

Schmid, Thomas; Bogdan, Martin; Günzel, Dorothee

2013-01-01

Quantifying changes in partial resistances of epithelial barriers in vitro is a challenging and time-consuming task in physiology and pathophysiology. Here, we demonstrate that electrical properties of epithelial barriers can be estimated reliably by combining impedance spectroscopy measurements, mathematical modeling and machine learning algorithms. Conventional impedance spectroscopy is often used to estimate epithelial capacitance as well as epithelial and subepithelial resistance. Based on this, the more refined two-path impedance spectroscopy makes it possible to further distinguish transcellular and paracellular resistances. In a next step, transcellular properties may be further divided into their apical and basolateral components. The accuracy of these derived values, however, strongly depends on the accuracy of the initial estimates. To obtain adequate accuracy in estimating subepithelial and epithelial resistance, artificial neural networks were trained to estimate these parameters from model impedance spectra. Spectra that reflect behavior of either HT-29/B6 or IPEC-J2 cells as well as the data scatter intrinsic to the used experimental setup were created computationally. To prove the proposed approach, reliability of the estimations was assessed with both modeled and measured impedance spectra. Transcellular and paracellular resistances obtained by such neural network-enhanced two-path impedance spectroscopy are shown to be sufficiently reliable to derive the underlying apical and basolateral resistances and capacitances. As an exemplary perturbation of pathophysiological importance, the effect of forskolin on the apical resistance of HT-29/B6 cells was quantified. PMID:23840862

Relation between the ion size and pore size for an electric double-layer capacitor.

PubMed

Largeot, Celine; Portet, Cristelle; Chmiola, John; Taberna, Pierre-Louis; Gogotsi, Yury; Simon, Patrice

2008-03-05

The research on electrochemical double layer capacitors (EDLC), also known as supercapacitors or ultracapacitors, is quickly expanding because their power delivery performance fills the gap between dielectric capacitors and traditional batteries. However, many fundamental questions, such as the relations between the pore size of carbon electrodes, ion size of the electrolyte, and the capacitance have not yet been fully answered. We show that the pore size leading to the maximum double-layer capacitance of a TiC-derived carbon electrode in a solvent-free ethyl-methylimmidazolium-bis(trifluoro-methane-sulfonyl)imide (EMI-TFSI) ionic liquid is roughly equal to the ion size (approximately 0.7 nm). The capacitance values of TiC-CDC produced at 500 degrees C are more than 160 F/g and 85 F/cm(3) at 60 degrees C, while standard activated carbons with larger pores and a broader pore size distribution present capacitance values lower than 100 F/g and 50 F/cm(3) in ionic liquids. A significant drop in capacitance has been observed in pores that were larger or smaller than the ion size by just an angstrom, suggesting that the pore size must be tuned with sub-angstrom accuracy when selecting a carbon/ion couple. This work suggests a general approach to EDLC design leading to the maximum energy density, which has been now proved for both solvated organic salts and solvent-free liquid electrolytes.

Enhancing the Capacitive Performance of Electric Double-Layer Capacitors with Ionic Liquid Mixtures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lian, C.; Liu, K.; Van Aken, Katherine L.

Formulating room-temperature ionic liquid (RTIL) mixed electrolytes was recently proposed as an effective and convenient strategy to increase the capacitive performance of electrochemical capacitors. In this paper, we investigate the electrical double-layer (EDL) structure and the capacitance of two RTILs, 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (EMI-TFSI) and 1-ethyl-3-methylimidazolium tetrafluoroborate (EMI-BF 4), and their mixtures with onion-like carbon electrodes using experiment and classical density functional theory. The principal difference between these ionic liquids is the smaller diameter of the BF 4 – anion relative to the TFSI – anion and the EMI + cation. A volcano-shaped trend is identified for the capacitance versus themore » composition of the RTIL mixture. The mixture effect, which makes more counterions pack on and more co-ions leave from the electrode surface, leads to an increase of the counterion density within the EDL and thus a larger capacitance. Finally, these theoretical predictions are in good agreement with our experimental observations and offer guidance for designing RTIL mixtures for EDL supercapacitors.« less

The Influence of Materials of Electrodes of Sensitized Solar Cells on Their Capacitive and Electrical Characteristics

NASA Astrophysics Data System (ADS)

Lazarenko, P. I.; Kozyukhin, S. A.; Mokshina, A. I.; Sherchenkov, A. A.; Patrusheva, T. N.; Irgashev, R. A.; Lebedev, E. A.; Kozik, V. V.

2018-05-01

An estimation is made of the internal capacitance of sensitized solar cells (SSCs) manufactured by the method of extraction pyrolysis. The structures under study are characterized by a hysteresis in the current-voltage characteristic obtained in the direct and reverse modes of voltage variation. The investigations of SSCs demonstrate a high inertness of the parameters under connection and disconnection of the light source. The use of a transparent conductive ITO-electrode, manufactured by the extraction pyrolysis, increases the external capacitance of the cell and decelerates the processes of current decay after the light source connection compared to the commercial FTO-electrode. The values of charges, capacitances, and SSC charge conservation efficiencies are calculated and the internal resistance of the SSCs under study is estimated. According to the estimations performed, the specimen with an ITO-layer possesses a capacitance equal to C1 = 1.23·10-3 F, which is by two orders of magnitude higher than that of the specimen with a FTO-layer (C2 = 2.06·10-5 F).

Enhancing the Capacitive Performance of Electric Double-Layer Capacitors with Ionic Liquid Mixtures

DOE PAGES

Lian, C.; Liu, K.; Van Aken, Katherine L.; ...

2016-04-18

Formulating room-temperature ionic liquid (RTIL) mixed electrolytes was recently proposed as an effective and convenient strategy to increase the capacitive performance of electrochemical capacitors. In this paper, we investigate the electrical double-layer (EDL) structure and the capacitance of two RTILs, 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (EMI-TFSI) and 1-ethyl-3-methylimidazolium tetrafluoroborate (EMI-BF 4), and their mixtures with onion-like carbon electrodes using experiment and classical density functional theory. The principal difference between these ionic liquids is the smaller diameter of the BF 4 – anion relative to the TFSI – anion and the EMI + cation. A volcano-shaped trend is identified for the capacitance versus themore » composition of the RTIL mixture. The mixture effect, which makes more counterions pack on and more co-ions leave from the electrode surface, leads to an increase of the counterion density within the EDL and thus a larger capacitance. Finally, these theoretical predictions are in good agreement with our experimental observations and offer guidance for designing RTIL mixtures for EDL supercapacitors.« less

Pseudo-capacitor device for aqueous electrolytes

DOEpatents

Prakash, Jai; Thackeray, Michael M.; Dees, Dennis W.; Vissers, Donald R.; Myles, Kevin M.

1998-01-01

A pseudo-capacitor having a high energy storage capacity develops a double layer capacitance as well as a Faradaic or battery-like redox reaction, also referred to as pseudo-capacitance. The Faradaic reaction gives rise to a capacitance much greater than that of the typical ruthenate oxide ultracapacitor which develops only charge separation-based double layer capacitance. The capacitor employs a lead and/or bismuth/ruthenate and/or iridium system having the formula A.sub.2 ›B.sub.2-x Pb.sub.x !O.sub.7-y, where A=Pb, Bi, and B=Ru, Ir, and O

Pseudo-capacitor device for aqueous electrolytes

DOEpatents

Prakash, J.; Thackeray, M.M.; Dees, D.W.; Vissers, D.R.; Myles, K.M.

1998-11-24

A pseudo-capacitor having a high energy storage capacity develops a double layer capacitance as well as a Faradaic or battery-like redox reaction, also referred to as pseudo-capacitance. The Faradaic reaction gives rise to a capacitance much greater than that of the typical ruthenate oxide ultracapacitor which develops only charge separation-based double layer capacitance. The capacitor employs a lead and/or bismuth/ruthenate and/or iridium system having the formula A{sub 2}[B{sub 2{minus}x}Pb{sub x}]O{sub 7{minus}y}, where A=Pb, Bi, and B=Ru, Ir, and O

Competition between ionic adsorption and desorption on electrochemical double layer capacitor electrodes in acetonitrile solutions at different currents and temperatures

NASA Astrophysics Data System (ADS)

Park, Sieun; Kang, Seok-Won; Kim, Ketack

2017-12-01

The operation of electrochemical double layer capacitors at high currents and viscosities and at low temperatures is difficult. Under these conditions, ion transport is limited, and some of the electrode area is unavailable for adsorption, which results in a low capacitance. Increasing the temperature helps to increase the ionic movement, leading to enhanced adsorption and increased capacitance. In contrast, ion desorption (self-discharge) surpasses the capacitance improvement when ions gain a high amount of energy with increasing temperature. For example, temperatures as high as 70 °C cause a very high rate of ionic desorption in acetonitrile solutions in which the individual properties of the two electrolytes-tetraethylammonium tetrafluoroborate (TEA BF4) and ethylmethylimidazolium tetrafluoroborate (EMI BF4)-are not distinguishable. The capacitance improvement and self-discharge are balanced, resulting in a capacitance peak at mid-range temperatures, i.e., 35-45 °C, in the more viscous electrolyte, i.e., TEA BF4. The less viscous electrolyte, i.e., EMI BF4 has a wider capacitance peak from 25 to 45 °C and higher capacitance than that of TEA BF4. Because the maximum power is obtained in the mid-temperature range (35-45 °C), it is necessary to control the viscosity and temperature to obtain the maximum power in a given device.

Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

NASA Astrophysics Data System (ADS)

Chen, Wei; Fan, Zhongli; Zeng, Gaofeng; Lai, Zhiping

2013-03-01

High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices.

Frequency dispersion analysis of thin dielectric MOS capacitor in a five-element model

NASA Astrophysics Data System (ADS)

Zhang, Xizhen; Zhang, Sujuan; Zhu, Huichao; Pan, Xiuyu; Cheng, Chuanhui; Yu, Tao; Li, Xiangping; Cheng, Yi; Xing, Guichao; Zhang, Daming; Luo, Xixian; Chen, Baojiu

2018-02-01

An Al/ZrO2/IL/n-Si (IL: interface layer) MOS capacitor has been fabricated by metal organic decomposition of ZrO2 and thermal deposition Al. We have measured parallel capacitance (C m) and parallel resistance (R m) versus bias voltage curves (C m, R m-V) at different AC signal frequency (f), and C m, R m-f curves at different bias voltage. The curves of C m, R m-f measurements show obvious frequency dispersion in the range of 100 kHz-2 MHz. The energy band profile shows that a large voltage is applied on the ZrO2 layer and IL at accumulation, which suggests possible dielectric polarization processes by some traps in ZrO2 and IL. C m, R m-f data are used for frequency dispersion analysis. To exclude external frequency dispersion, we have extracted the parameters of C (real MOS capacitance), R p (parallel resistance), C IL (IL capacitance), R IL (IL resistance) and R s (Si resistance) in a five-element model by using a three-frequency method. We have analyzed intrinsic frequency dispersion of C, R p, C IL, R IL and R s by studying the dielectric characteristics and Si surface layer characteristics. At accumulation, the dispersion of C and R p is attributed to dielectric polarization such as dipolar orientation and oxide traps. The serious dispersion of C IL and R IL are relative to other dielectric polarization, such as border traps and fixed oxide traps. The dispersion of R s is mainly attributed to contact capacitance (C c) and contact resistance (R c). At depletion and inversion, the frequency dispersion of C, R p, C IL, R IL, and R s are mainly attributed to the depletion layer capacitance (C D). The interface trap capacitance (C it) and interface trap resistance (R it) are not dominant for the dispersion of C, R p, C IL, R IL, and R s.

Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors.

PubMed

Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei; Zhang, Limei; Ren, Jingzheng; Zheng, Mingtao; Dong, Lichun; Sun, Luyi

2016-09-21

In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

Electrocapillarity and zero-frequency differential capacitance at the interface between mercury and ionic liquids measured using the pendant drop method.

PubMed

Nishi, Naoya; Hashimoto, Atsunori; Minami, Eiji; Sakka, Tetsuo

2015-02-21

The structure of ionic liquids (ILs) at the electrochemical IL|Hg interface has been studied using the pendant drop method. From the electrocapillarity (potential dependence of interfacial tension) differential capacitance (Cd) at zero frequency (in other words, static differential capacitance or differential capacitance in equilibrium) has been evaluated. The potential dependence of zero-frequency Cd at the IL|Hg interface exhibits one or two local maxima near the potential of zero charge (Epzc), depending on the cation of the ILs. For 1-ethyl-3-methylimidazolium tetrafluoroborate, an IL with the cation having a short alkyl chain, the Cdvs. potential curve has one local maximum whereas another IL, 1-octyl-3-methylimidazolium tetrafluoroborate, with the cation having a long alkyl chain, shows two maxima. These behaviors of zero-frequency Cd agree with prediction by recent theoretical and simulation studies for the electrical double layer in ILs. At negative and positive potentials far from Epzc, the zero-frequency Cd increases for both the ILs studied. The increase in zero-frequency Cd is attributable to the densification of ionic layers in the electrical double layer.

Impurity effects on ionic-liquid-based supercapacitors

NASA Astrophysics Data System (ADS)

Liu, Kun; Lian, Cheng; Henderson, Douglas; Wu, Jianzhong

2017-02-01

Small amounts of an impurity may affect the key properties of an ionic liquid and such effects can be dramatically amplified when the electrolyte is under confinement. Here the classical density functional theory is employed to investigate the impurity effects on the microscopic structure and the performance of ionic-liquid-based electrical double-layer capacitors, also known as supercapacitors. Using a primitive model for ionic species, we study the effects of an impurity on the double layer structure and the integral capacitance of a room temperature ionic liquid in model electrode pores and find that an impurity strongly binding to the surface of a porous electrode can significantly alter the electric double layer structure and dampen the oscillatory dependence of the capacitance with the pore size of the electrode. Meanwhile, a strong affinity of the impurity with the ionic species affects the dependence of the integral capacitance on the pore size. Up to 30% increase in the integral capacitance can be achieved even at a very low impurity bulk concentration. By comparing with an ionic liquid mixture containing modified ionic species, we find that the cooperative effect of the bounded impurities is mainly responsible for the significant enhancement of the supercapacitor performance.

Structure and capacitance of an electric double layer of an asymmetric valency dimer electrolyte: A comparison of the density functional theory with Monte Carlo simulations

DOE PAGES

Henderson, Douglas; Silvestre-Alcantara, Whasington; Kaja, Monika; ...

2016-08-18

Here, the density functional theory is applied to a study of the structure and differential capacitance of a planar electric double layer formed by a valency asymmetric mixture of charged dimers and monomers. The dimer consists of two tangentially tethered hard spheres of equal diameters of which one is charged and the other is neutral, while the monomer is a charged hard sphere of the same size. The dimer electrolyte is next to a uniformly charged, smooth planar electrode. The electrode-particle singlet distributions, the mean electrostatic potential, and the differential capacitance for the model double layer are evaluated for amore » 2:1/1:2 valency electrolyte at a given concentration. Important consequences of asymmetry in charges and in ion shapes are (i) a finite, non-zero potential of zero charge, and (ii) asymmetric shaped 2:1 and 1:2 capacitance curves which are not mirror images of each other. Comparisons of the density functional results with the corresponding Monte Carlo simulations show the theoretical predictions to be in good agreement with the simulations overall except near zero surface charge.« less

Internal Photoemission at Interaces of ALD TaiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Chou, H. Y.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-12-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Internal Photoemission at Interfaces of ALD TaSiOx Insulating Layers Deposited on Si, InP and In0.53Ga0.47As

NASA Astrophysics Data System (ADS)

Y Chou, H.; Afanas'ev, V. V.; Thoan, N. H.; Adelmann, C.; Lin, H. C.; Houssa, M.; Stesmans, A.

2012-10-01

Electrical analysis of interfaces of (100)Si, (100)InP, and (100)In0.53Ga0.47As with TaSiOx (Ta/Si≈1) films atomic-layer deposited using SiCl4, TaCl5, and H2O precursors suggests Ta silicate as a good insulating and surface passivating layer on all three semiconductors. However, when a positive voltage is applied to the top metal electrode in a metal/ TaSiOx /semiconductor configuration, considerable hysteresis of the capacitance-voltage curves, both at 300 and 77 K, is universally observed indicating electron injection and trapping in the insulator. To shed some light on the origin of this charge instability, we analyzed interface band alignment of the studied interfaces using the spectroscopies of internal photoemission and photoconductivity measurements. The latter reveals that independently of the semiconductor substrate material, TaSiOx layers exhibit a bandgap of only 4.5±0.1 eV, typical for a Ta2O5 network. The density of electron states associated with this narrow-gap network may account for the enhanced electron injection and trapping. Furthermore, while a sufficiently high energy barrier for electrons between Si and TaSiOx (3.1±0.1 eV) is found, much lower IPE thresholds are encountered at the (100)InP/TaSiOx and (100) In0.53Ga0.47As/TaSiOx interfaces, i.e., 2.4 and 2.0 eV, respectively. The lower barrier may be related by the formation of narrow-gap In-rich interlayers between AIIIBV semiconductors and TaSiOx.

Preparation of titanium dioxide films on etched aluminum foil by vacuum infiltration and anodizing

NASA Astrophysics Data System (ADS)

Xiang, Lian; Park, Sang-Shik

2016-12-01

Al2O3-TiO2 (Al-Ti) composite oxide films are a promising dielectric material for future use in capacitors. In this study, TiO2 films were prepared on etched Al foils by vacuum infiltration. TiO2 films prepared using a sol-gel process were annealed at various temperatures (450, 500, and 550 °C) for different time durations (10, 30, and 60 min) for 4 cycles, and then anodized at 100 V. The specimens were characterized using X-ray diffraction, field emission scanning electron microscopy, and field emission transmission electron microscopy. The results show that the tunnels of the specimens feature a multi-layer structure consisting of an Al2O3 outer layer, an Al-Ti composite oxide middle layer, and an aluminum hydrate inner layer. The electrical properties of the specimens, such as the withstanding voltage and specific capacitance, were also measured. Compared to specimens without TiO2 coating, the specific capacitances of the TiO2-coated specimens are increased. The specific capacitance of the anode Al foil with TiO2 coating increased by 42% compared to that of a specimen without TiO2 coating when annealed at 550 °C for 10 min. These composite oxide films could enhance the specific capacitance of anode Al foils used in dielectric materials.

Enhanced Capacitance of Hybrid Layered Graphene/Nickel Nanocomposite for Supercapacitors

PubMed Central

Mohd Zaid, Norsaadatul Akmal; Idris, Nurul Hayati

2016-01-01

In this work, Ni nanoparticles were directly decorated on graphene (G) nanosheets via mechanical ball milling. Based on transmission electron microscopy observations, the Ni nanoparticles were well dispersed and attached to the G nanosheet without any agglomerations. Electrochemical results showed that the capacitance of a G/Ni nanocomposite was 275 F g−1 at a current density of 2 A g−1, which is higher than the capacitance of bare G (145 F g−1) and bare Ni (3 F g−1). The G/Ni electrode also showed superior performance at a high current density, exhibiting a capacitance of 190 F g−1 at a current density of 5 A g−1 and a capacitance of 144 F g−1 at a current density of 10 A g−1. The equivalent series resistance for G/Ni nanocomposites also decreased. The enhanced performance of this hybrid supercapacitor is best described by the synergistic effect, i.e. dual charge-storage mechanism, which is demonstrated by electrical double layer and pseudocapacitance materials. Moreover, a high specific surface area and electrical conductivity of the materials enhanced the capacitance. These results indicate that the G/Ni nanocomposite is a potential supercapacitor. PMID:27553290

Adhesive flexible barrier film, method of forming same, and organic electronic device including same

DOEpatents

Blizzard, John Donald; Weidner, William Kenneth

2013-02-05

An adhesive flexible barrier film comprises a substrate and a barrier layer disposed on the substrate. The barrier layer is formed from a barrier composition comprising an organosilicon compound. The adhesive flexible barrier film also comprises an adhesive layer disposed on the barrier layer and formed from an adhesive composition. A method of forming the adhesive flexible barrier film comprises the steps of disposing the barrier composition on the substrate to form the barrier layer, disposing the adhesive composition on the barrier layer to form the adhesive layer, and curing the barrier layer and the adhesive layer. The adhesive flexible barrier film may be utilized in organic electronic devices.

Capacitance changes in frog skin caused by theophylline and antidiuretic hormone.

PubMed

Cuthbert, A W; Painter, E

1969-09-01

1. Impedance loci for frog skins have been calculated by computer analysis from voltage transients developed across the tissues.2. Attention has been paid to simultaneous changes in conductance and capacitance of skins treated either with antidiuretic hormone (ADH) or with theophylline. These drugs always caused an increase in conductance and usually the skin capacitance also increased. However, changes in conductance were not correlated with capacitance changes.3. Changes in capacitance caused by the drugs may represent pore formation in the barrier to water flow, since both drugs increase hydro-osmotic flow in epithelia. If this interpretation is correct, then 0.14% of the membrane area forms water-permeable pores in response to a maximal dose of ADH. This value is somewhat less than the value obtained previously (0.3%) by graphical analysis.4. A theoretical account is given of the relative accuracy of the computer method and the graphical method for voltage transient analysis.

Manganese oxide nanowires wrapped with nitrogen doped carbon layers for high performance supercapacitors.

PubMed

Li, Ying; Mei, Yuan; Zhang, Lin-Qun; Wang, Jian-Hai; Liu, An-Ran; Zhang, Yuan-Jian; Liu, Song-Qin

2015-10-01

In this study, manganese oxide nanowires wrapped by nitrogen-doped carbon layers (MnO(x)@NCs) were prepared by carbonization of poly(o-phenylenediamine) layer coated onto MnO2 nanowires for high performance supercapacitors. The component and structure of the MnO(x)@NCs were controlled through carbonization procedure under different temperatures. Results demonstrated that this composite combined the high conductivity and high specific surface area of nitrogen-doped carbon layers with the high pseudo-capacitance of manganese oxide nanowires. The as-prepared MnO(x)@NCs exhibited superior capacitive properties in 1 M Na2SO4 aqueous solution, such as high conductivity (4.167×10(-3) S cm(-1)), high specific capacitance (269 F g(-1) at 10 mV s(-1)) and long cycle life (134 F g(-1) after 1200 cycles at a scan rate of 50 mV s(-1)). It is reckoned that the present novel hybrid nanowires can serve as a promising electrode material for supercapacitors and other electrochemical devices. Copyright © 2015 Elsevier Inc. All rights reserved.

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

NASA Astrophysics Data System (ADS)

Lagger, P.; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Naumann, A.; Müller, J.; Wilde, L.; Sundqvist, J.; Pogany, D.; Ostermaier, C.

2014-07-01

The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔVth, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness tD and barrier thickness tB, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔNit, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔNit is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

The importance of ion size and electrode curvature on electrical double layers in ionic liquids.

PubMed

Feng, Guang; Qiao, Rui; Huang, Jingsong; Dai, Sheng; Sumpter, Bobby G; Meunier, Vincent

2011-01-21

Room-temperature ionic liquids (ILs) are an emerging class of electrolytes for supercapacitors. We investigate the effects of ion size and electrode curvature on the electrical double layers (EDLs) in two ILs 1-butyl-3-methylimidazolium chloride [BMIM][Cl] and 1-butyl-3-methylimidazolium hexafluorophosphate [BMIM][PF(6)], using a combination of molecular dynamics (MD) and quantum density functional theory (DFT) simulations. The sizes of the counter-ion and co-ion affect the ion distribution and orientational structure of EDLs. The EDL capacitances near both planar and cylindrical electrodes were found to follow the order: [BMIM][Cl] (near the positive electrode) > [BMIM][PF(6)] (near the positive electrode) ≈ [BMIM][Cl] (near the negative electrode) ≈ [BMIM][PF(6)] (near the negative electrode). The EDL capacitance was also found to increase as the electrode curvature increases. These capacitance data can be fit to the Helmholtz model and the recently proposed exohedral electrical double-cylinder capacitor (xEDCC) model when the EDL thickness is properly parameterized, even though key features of the EDLs in ILs are not accounted for in these models. To remedy the shortcomings of existing models, we propose a "Multiple Ion Layers with Overscreening" (MILO) model for the EDLs in ILs that takes into account two critical features of such EDLs, i.e., alternating layering of counter-ions and co-ions and charge overscreening. The capacitance computed from the MILO model agrees well with the MD prediction. Although some input parameters of the MILO model must be obtained from MD simulations, the MILO model may provide a new framework for understanding many important aspects of EDLs in ILs (e.g., the variation of EDL capacitance with the electrode potential) that are difficult to interpret using classical EDL models and experiments.

MnO2 Nanorods Intercalating Graphene Oxide/Polyaniline Ternary Composites for Robust High-Performance Supercapacitors

NASA Astrophysics Data System (ADS)

Han, Guangqiang; Liu, Yun; Zhang, Lingling; Kan, Erjun; Zhang, Shaopeng; Tang, Jian; Tang, Weihua

2014-04-01

New ternary composites of MnO2 nanorods, polyaniline (PANI) and graphene oxide (GO) have been prepared by a two-step process. The 100 nm-long MnO2 nanorods with a diameter ~20 nm are conformably coated with PANI layers and fastened between GO layers. The MnO2 nanorods incorporated ternary composites electrode exhibits significantly increased specific capacitance than PANI/GO binary composite in supercapacitors. The ternary composite with 70% MnO2 exhibits a highest specific capacitance reaching 512 F/g and outstanding cycling performance, with ~97% capacitance retained over 5000 cycles. The ternary composite approach offers an effective solution to enhance the device performance of metal-oxide based supercapacitors for long cycling applications.

Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding

NASA Astrophysics Data System (ADS)

Morita, Sho; Liang, Jianbo; Matsubara, Moeko; Dhamrin, Marwan; Nishio, Yoshitaka; Shigekawa, Naoteru

2018-02-01

We fabricate 17-µm-thick Al foil/n-4H-SiC Schottky junctions by surface-activated bonding. Their current-voltage and capacitance-voltage characteristics are compared with those of Schottky junctions fabricated by evaporating Al layers on n-4H-SiC epilayers. We find that the ideality factor of Al foil/SiC junctions is larger than that of conventional junctions, which is due to the irradiation of the fast atom beam (FAB) of Ar. The ideality factor of Al foil/SiC junctions is improved by annealing at 400 °C. We also find that the Schottky barrier height is increased by FAB irradiation, which is likely to be due to the negative charges formed at SiC surfaces.

Design rules and reality check for carbon-based ultracapacitors

NASA Astrophysics Data System (ADS)

Eisenmann, Erhard T.

1995-04-01

Design criteria for carbon-based Ultracapacitors have been determined for specified energy and power requirements, using the geometry of the components and such material properties as density, porosity and conductivity as parameters, while also considering chemical compatibility. This analysis shows that the weights of active and inactive components of the capacitor structure must be carefully balanced for maximum energy and power density. When applied to nonaqueous electrolytes, the design rules for a 5 Wh/kg device call for porous carbon with a specific capacitance of about 30 F/cu cm. This performance is not achievable with pure, electrostatic double layer capacitance. Double layer capacitance is only 5 to 30% of that observed in aqueous electrolyte. Tests also showed that nonaqueous electrolytes have a diminished capability to access micropores in activated carbon, in one case yielding a capacitance of less than 1 F/cu cm for carbon that had 100 F/cu cm in aqueous electrolyte. With negative results on nonaqueous electrolytes dominating the present study, the obvious conclusion is to concentrate on aqueous systems. Only aqueous double layer capacitors offer adequate electrostatic charging characteristics which is the basis for high power performance. There arc many opportunities for further advancing aqueous double layer capacitors, one being the use of highly activated carbon films, as opposed to powders, fibers and foams. While the manufacture of carbon films is still costly, and while the energy and power density of the resulting devices may not meet the optimistic goals that have been proposed, this technology could produce true double layer capacitors with significantly improved performance and large commercial potential.

C70/C70:pentacene/pentacene organic heterojunction as the connecting layer for high performance tandem organic light-emitting diodes: Mechanism investigation of electron injection and transport

NASA Astrophysics Data System (ADS)

Guo, Qingxun; Yang, Dezhi; Chen, Jiangshan; Qiao, Xianfeng; Ahamad, Tansir; Alshehri, Saad M.; Ma, Dongge

2017-03-01

A high performance tandem organic light-emitting diode (OLED) is realized by employing a C70/C70:pentacene/pentacene organic heterojunction as the efficient charge generation layer (CGL). Not only more than two time enhancement of external quantum efficiency but also significant improvement in both power efficiency and lifetime are well achieved. The mechanism investigations find that the electron injection from the CGL to the adjacent electron transport layer (ETL) in tandem devices is injection rate-limited due to the high interface energy barrier between the CGL and the ETL. By the capacitance-frequency (C-F) and low temperature current density-voltage (J-V) characteristic analysis, we confirm that the electron transport is a space-charge-limited current process with exponential trap distribution. These traps are localized states below the lowest unoccupied molecular orbital edge inside the gap and would be filled with the upward shift of the Fermi level during the n-doping process. Furthermore, both the trap density (Ht) and the activation energy (Ea) could be carefully worked out through low temperature J-V measurements, which is very important for developing high performance tandem OLEDs.

Micro-Machined Thin Film Sensor Arrays For The Detection Of H2, Containing Gases, And Method Of Making And Using The Same.

DOEpatents

DiMeo, Jr., Frank; Baum, Thomas H.

2003-07-22

The present invention provides a hydrogen sensor including a thin film sensor element formed by metal organic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a micro-hotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magneto resistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen permeable barrier may comprise species to scavenge oxygen and other like species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

Dielectric properties and nonlinear I-V electrical behavior of (Li1+, Al3+) co-doped CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Sun, Li; Ni, Qing; Guo, Jianqin; Cao, Ensi; Hao, Wentao; Zhang, Yongjia; Ju, Lin

2018-06-01

(Li1+, Al3+) co-doped CaCu3Ti4O12 ceramics (CaCu3-2 x Li x Al x Ti4O12, x = 0.05, 0.1, 0.15) were prepared by a sol-gel method and were sintered at 1020-1080 °C for 8 h to improve the geometric microstructure, dielectric and nonlinear I-V electrical properties. Notably, very high dielectric constant of 1 × 105 with good dielectric-frequency as well as dielectric-temperature stability can be achieved in CaCu2.8Li0.1Al0.1Ti4O12 ceramic sintered at 1060 °C. The average grain sizes, resistivity and the non-Ohmic properties are also improved compared to pure CaCu3Ti4O12. These results indicate that (Li1+, Al3+) co-doping at the Cu2+ site can improve the dielectric properties of CaCu3Ti4O12, supporting the internal barrier layer capacitance effect of Schottky barriers at grain boundaries.

Negative capacitance in a ferroelectric capacitor.

PubMed

Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

2015-02-01

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

Supercapacitor electrodes based on polyaniline-silicon nanoparticle composite

NASA Astrophysics Data System (ADS)

Liu, Qiang; Nayfeh, Munir H.; Yau, Siu-Tung

A composite material formed by dispersing ultrasmall silicon nanoparticles in polyaniline has been used as the electrode material for supercapacitors. Electrochemical characterization of the composite indicates that the nanoparticles give rise to double-layer capacitance while polyaniline produces pseudocapacitance. The composite shows significantly improved capacitance compared to that of polyaniline. The enhanced capacitance results in high power (220 kW kg -1) and energy-storage (30 Wh kg -1) capabilities of the composite material. A prototype supercapacitor using the composite as the charge storage material has been constructed. The capacitor showed the enhanced capacitance and good device stability during 1000 charging/discharging cycles.

Polyimide-Based Capacitive Humidity Sensor

PubMed Central

Steinmaßl, Matthias; Endres, Hanns-Erik; Drost, Andreas; Eisele, Ignaz; Kutter, Christoph; Müller-Buschbaum, Peter

2018-01-01

The development of humidity sensors with simple transduction principles attracts considerable interest by both scientific researchers and industrial companies. Capacitive humidity sensors, based on polyimide sensing material with different thickness and surface morphologies, are prepared. The surface morphology of the sensing layer is varied from flat to rough and then to nanostructure called nanograss by using an oxygen plasma etch process. The relative humidity (RH) sensor selectively responds to the presence of water vapor by a capacitance change. The interaction between polyimide and water molecules is studied by FTIR spectroscopy. The complete characterization of the prepared capacitive humidity sensor performance is realized using a gas mixing setup and an evaluation kit. A linear correlation is found between the measured capacitance and the RH level in the range of 5 to 85%. The morphology of the humidity sensing layer is revealed as an important parameter influencing the sensor performance. It is proved that a nanograss-like structure is the most effective for detecting RH, due to its rapid response and recovery times, which are comparable to or even better than the ones of commercial polymer-based sensors. This work demonstrates the readiness of the developed RH sensor technology for industrialization. PMID:29751632

A Micromachined Capacitive Pressure Sensor Using a Cavity-Less Structure with Bulk-Metal/Elastomer Layers and Its Wireless Telemetry Application

PubMed Central

Takahata, Kenichi; Gianchandani, Yogesh B.

2008-01-01

This paper reports a micromachined capacitive pressure sensor intended for applications that require mechanical robustness. The device is constructed with two micromachined metal plates and an intermediate polymer layer that is soft enough to deform in a target pressure range. The plates are formed of micromachined stainless steel fabricated by batch-compatible micro-electro-discharge machining. A polyurethane room-temperature-vulcanizing liquid rubber of 38-μm thickness is used as the deformable material. This structure eliminates both the vacuum cavity and the associated lead transfer challenges common to micromachined capacitive pressure sensors. For frequency-based interrogation of the capacitance, passive inductor-capacitor tanks are fabricated by combining the capacitive sensor with an inductive coil. The coil has 40 turns of a 127-μm-diameter copper wire. Wireless sensing is demonstrated in liquid by monitoring the variation in the resonant frequency of the tank via an external coil that is magnetically coupled with the tank. The sensitivity at room temperature is measured to be 23-33 ppm/KPa over a dynamic range of 340 KPa, which is shown to match a theoretical estimation. Temperature dependence of the tank is experimentally evaluated. PMID:27879824

Surface morphological, electrical and transport properties of rapidly annealed double layers Ru/Cr Schottky structure on n-type InP

NASA Astrophysics Data System (ADS)

Shanthi Latha, K.; Rajagopal Reddy, V.

2017-07-01

The electrical and transport properties of a fabricated bilayer Ru/Cr/ n-InP Schottky diode (SD) have been investigated at different annealing temperatures. Atomic force microscopy results have showed that the overall surface morphology of the Ru/Cr/ n-InP SD is fairly smooth at elevated temperatures. High barrier height is achieved for the diode annealed at 300 °C compared to the as-deposited, annealed at 200 and 400 °C diodes. The series resistance and shunt resistance of the Ru/Cr/ n-InP SD are estimated by current-voltage method at different annealing temperatures. The barrier heights and series resistance are also determined by Cheung's and modified Norde functions. The interface state density of the Ru/Cr/ n-InP SD is found to be decreased after annealing at 300 °C and then slightly increased upon annealing at 400 °C. The difference between barrier heights obtained from current-voltage and capacitance-voltage is also discussed. Experimental results have showed that the Poole-Frenkel emission is found to be dominant in the lower bias region whereas Schottky emission is dominant in the higher bias region for the Ru/Cr/ n-InP SDs irrespective of annealing temperatures.

Advanced Anticorrosion Coating Materials Derived from Sunflower Oil with Bifunctional Properties.

PubMed

Balakrishnan, Thiruparasakthi; Sathiyanarayanan, Sadagopan; Mayavan, Sundar

2015-09-09

High-performance barrier films preventing permeation of moisture, aggressive chloride ions, and corrosive acids are important for many industries ranging from food to aviation. In the current study, pristine sunflower oil was used to form uniform adherent films on iron (Fe) via a simple single-step thermal treatment (without involving any initiator/mediator/catalyst). Oxidation of oil on heating results in a highly conjugated (oxidized) crystalline lamellar network with interlayer separation of 0.445 nm on Fe. The electrochemical corrosion tests proved that the coating exhibits superior anticorrosion performance with high coating resistance (>10(9) ohm cm2) and low capacitance values (<10(-10) F cm(-2)) as compared to bare Fe, graphene, and conducting polymer based coatings in 1 M hydrochloric acid solutions. The electrochemical analyses reveal that the oil coatings developed in this study provided a two-fold protection of passivation from the oxide layer and barrier from polymeric films. It is clearly observed that there is no change in structure, morphology, or electrochemical properties even after a prolonged exposure time of 80 days. This work indicates the prospect of developing highly inert, environmentally green, nontoxic, and micrometer level passivating barrier coatings from more sustainable and renewable sources, which can be of interest for numerous applications.

MnO2 Nanorods Intercalating Graphene Oxide/Polyaniline Ternary Composites for Robust High-Performance Supercapacitors

PubMed Central

Han, Guangqiang; Liu, Yun; Zhang, Lingling; Kan, Erjun; Zhang, Shaopeng; Tang, Jian; Tang, Weihua

2014-01-01

New ternary composites of MnO2 nanorods, polyaniline (PANI) and graphene oxide (GO) have been prepared by a two-step process. The 100 nm-long MnO2 nanorods with a diameter ~20 nm are conformably coated with PANI layers and fastened between GO layers. The MnO2 nanorods incorporated ternary composites electrode exhibits significantly increased specific capacitance than PANI/GO binary composite in supercapacitors. The ternary composite with 70% MnO2 exhibits a highest specific capacitance reaching 512 F/g and outstanding cycling performance, with ~97% capacitance retained over 5000 cycles. The ternary composite approach offers an effective solution to enhance the device performance of metal-oxide based supercapacitors for long cycling applications. PMID:24769835

Hydrothermally formed three-dimensional nanoporous Ni(OH)2 thin-film supercapacitors.

PubMed

Yang, Yang; Li, Lei; Ruan, Gedeng; Fei, Huilong; Xiang, Changsheng; Fan, Xiujun; Tour, James M

2014-09-23

A three-dimensional nanoporous Ni(OH)2 thin-film was hydrothermally converted from an anodically formed porous layer of nickel fluoride/oxide. The nanoporous Ni(OH)2 thin-films can be used as additive-free electrodes for energy storage. The nanoporous layer delivers a high capacitance of 1765 F g(-1) under three electrode testing. After assembly with porous activated carbon in asymmetric supercapacitor configurations, the devices deliver superior supercapacitive performances with capacitance of 192 F g(-1), energy density of 68 Wh kg(-1), and power density of 44 kW kg(-1). The wide working potential window (up to 1.6 V in 6 M aq KOH) and stable cyclability (∼90% capacitance retention over 10,000 cycles) make the thin-film ideal for practical supercapacitor devices.

Capacitive micromachined ultrasonic transducers (CMUTs) with isolation posts.

PubMed

Huang, Yongli; Zhuang, Xuefeng; Haeggstrom, Edward O; Ergun, A Sanli; Cheng, Ching-Hsiang; Khuri-Yakub, Butrus T

2008-03-01

In this paper, an improved design of a capacitive micromachined ultrasonic transducer (CMUT) is presented. The design improvement aims to address the reliability issues of a CMUT and to extend the device operation beyond the contact (collapse) voltage. The major design novelty is the isolation posts in the vacuum cavities of the CMUT cells instead of full-coverage insulation layers in conventional CMUTs. This eliminates the contact voltage drifting due to charging caused by the insulation layer, and enables repeatable CMUT operation in the post-contact regime. Ultrasonic tests of the CMUTs with isolation posts (PostCMUTs) in air (electrical input impedance and capacitance vs. bias voltage) and immersion (transmission and reception) indicate acoustic performance similar to that obtained from conventional CMUTs while no undesired side effects of this new design is observed.

Integrated TiN coated porous silicon supercapacitor with large capacitance per foot print

NASA Astrophysics Data System (ADS)

Grigoras, Kestutis; Grönberg, Leif; Ahopelto, Jouni; Prunnila, Mika

2017-05-01

We have fabricated a micro-supercapacitor with porous silicon electrodes coated with TiN by atomic layer deposition technique. The coating provides an efficient surface passivation and high electrical conductivity of the electrodes, resulting in stable and almost ideal electrochemical double layer capacitor behavior with characteristics comparable to the best carbon based micro-supercapacitors. Stability of the supercapacitor is verified by performing 50 000 voltammetry cycles with high capacitance retention obtained. Silicon microfabrication techniques facilitate integration of both supercapacitor electrodes inside the silicon substrate and, in this work, such in-chip supercapacitor is demonstrated. This approach allows realization of very high capacitance per foot print area. The in-chip micro-supercapacitor can be integrated with energy harvesting elements and can be used in wearable and implantable microdevices.

Fabrication of 3-D nanodimensioned electric double layer capacitor structures using block copolymer templates.

PubMed

Rasappa, Sozaraj; Borah, Dipu; Senthamaraikannan, Ramsankar; Faulkner, Colm C; Holmes, Justin D; Morris, Michael A

2014-07-01

The need for materials for high energy storage has led to very significant research in supercapacitor systems. These can exhibit electrical double layer phenomena and capacitances up to hundreds of F/g. Here, we demonstrate a new supercapacitor fabrication methodology based around the microphase separation of PS-b-PMMA which has been used to prepare copper nanoelectrodes of dimension -13 nm. These structures provide excellent capacitive performance with a maximum specific capacitance of -836 F/g for a current density of 8.06 A/g at a discharge current as high as 75 mA. The excellent performance is due to a high surface area: volume ratio. We suggest that this highly novel, easily fabricated structure might have a number of important applications.

CMOS micromachined capacitive cantilevers for mass sensing

NASA Astrophysics Data System (ADS)

Li, Ying-Chung; Ho, Meng-Han; Hung, Shi-Jie; Chen, Meng-Huei; S-C Lu, Michael

2006-12-01

In this paper, we present the design, fabrication and characterization of the CMOS micromachined cantilevers for mass sensing in the femtogram range. The cantilevers consisting of multiple metal and dielectric layers are fabricated after completion of a conventional CMOS process by dry etching steps. The cantilevers are electrostatically actuated to resonance by in-plane electrodes. The mechanical resonant frequency is detected capacitively with on-chip circuitry, where the modulation technique is applied to eliminate capacitive feedthrough from the driving port and to lessen the effect of flicker noise. The highest resonant frequency of the cantilevers is measured at 396.46 kHz with a quality factor of 2600 at 10 mTorr. The resonant frequency shift after deposition of a 0.1 µm SiO2 layer is 140 Hz, averaging 353 fg Hz-1.

Studying tantalum-based high-κ dielectrics in terms of capacitance measurements

NASA Astrophysics Data System (ADS)

Stojanovska-Georgievska, L.

2016-08-01

The trend of rapid development of microelectronics towards nano-miniaturization dictates the inevitable introduction of dielectrics with high permittivity (high-κ dielectrics), as alternative material for replacing SiO2. Therefore, studying these materials in terms of their characteristics, especially in terms of reliability, is of great importance for proper design and manufacture of devices. In this paper, alteration of capacitance in different frequency regimes is used, in order to determine the overall behavior of the material. Samples investigated here are MOS structures containing nanoscale tantalum based dielectrics. Layers of pure Ta2O5, but also Hf and Ti doped tantalum pentoxide, i.e. Ta2O5:Hf and Ta2O5:Ti are studied here. All samples are considered as ultrathin oxide layers with thicknesses less than 15 nm, obtained by radio frequent sputtering on p-type silicon substrate. Measuring capacitive characteristics enables determination of several specific parameters of the structures. The obtained results for capacitance in accumulation, the thickness and time evolution of the interfacial SiO2 layer, values of flatband and threshold voltage, density of oxide charges, interfacial and border states, and reliability properties favor the possibilities for more intensive use of studied materials in new nanoelectronic technologies.

Impurity effects on ionic-liquid-based supercapacitors

DOE PAGES

Liu, Kun; Lian, Cheng; Henderson, Douglas; ...

2016-12-27

Small amounts of an impurity may affect the key properties of an ionic liquid and such effects can be dramatically amplified when the electrolyte is under confinement. Here the classical density functional theory is employed to investigate the impurity effects on the microscopic structure and the performance of ionic-liquid-based electrical double-layer capacitors, also known as supercapacitors. Using a primitive model for ionic species, we study the effects of an impurity on the double layer structure and the integral capacitance of a room temperature ionic liquid in model electrode pores and find that an impurity strongly binding to the surface ofmore » a porous electrode can significantly alter the electric double layer structure and dampen the oscillatory dependence of the capacitance with the pore size of the electrode. Meanwhile, a strong affinity of the impurity with the ionic species affects the dependence of the integral capacitance on the pore size. Up to 30% increase in the integral capacitance can be achieved even at a very low impurity bulk concentration. As a result, by comparing with an ionic liquid mixture containing modified ionic species, we find that the cooperative effect of the bounded impurities is mainly responsible for the significant enhancement of the supercapacitor performance.« less

Acrosome reaction inducers impose alterations in repulsive strain and hydration barrier in human sperm membranes.

PubMed

Purohit, S B; Laloraya, M; Kumar, G P

1998-06-01

Spin labeling studies of the lipophilic domains of human spermatozoa during capacitation and during acrosome reaction (AR) under the influence of selected AR-inducers were performed. Significantly enhanced rotational function of molecules was obvious during capacitation, with no significant changes in membrane packaging or the lateral diffusion of molecules. The AR inducers appeared to restrict the rotational freedom of molecules, dramatically enhancing the lateral diffusion and ordering coefficients. A significant decrease in superoxide anion generation was observed in the acrosome reacted groups when compared to the non-acrosome reacted groups. A high level of superoxide anion radical (O2.-) level maintained in capacitated spermatozoa would add to the Van der Waal's repulsive forces at the polar head of phospholipids, holding the membrane in strain where the molecular enjoy little freedom for lateral motion. A sudden drop in the levels of O2.- in spermatozoa upon addition of AR inducers could abruptly release the local hydrophobic repulsive strain within the membrane. This loss of hydration barrier explains the observed enhancement in lateral diffusion profiles of lipids and the packaging of molecules. It is reasonable to assume that these phenomena could be amplified further by interplay of Ca2+ by modifying the local charge aggregation. Thus, we would conclude that AR inducers release the oxyradical load in capacitated spermatozoa, which would modify the repulsive strain and hydration barrier forces in the lipophilic domains permitting vesiculation of the membranes. It appears that various acrosome reaction inducers act as effectors of grossly similar physical alterations in sperm membranes and that the resulting signal cascades proceed through intercalating biochemical sequences.

Mass production of highly-porous graphene for high-performance supercapacitors

NASA Astrophysics Data System (ADS)

Amiri, Ahmad; Shanbedi, Mehdi; Ahmadi, Goodarz; Eshghi, Hossein; Kazi, S. N.; Chew, B. T.; Savari, Maryam; Zubir, Mohd Nashrul Mohd

2016-09-01

This study reports on a facile and economical method for the scalable synthesis of few-layered graphene sheets by the microwave-assisted functionalization. Herein, single-layered and few-layered graphene sheets were produced by dispersion and exfoliation of functionalized graphite in ethylene glycol. Thermal treatment was used to prepare pure graphene without functional groups, and the pure graphene was labeled as thermally-treated graphene (T-GR). The morphological and statistical studies about the distribution of the number of layers showed that more than 90% of the flakes of T-GR had less than two layers and about 84% of T-GR were single-layered. The microwave-assisted exfoliation approach presents us with a possibility for a mass production of graphene at low cost and great potentials in energy storage applications of graphene-based materials. Owing to unique surface chemistry, the T-GR demonstrates an excellent energy storage performance, and the electrochemical capacitance is much higher than that of the other carbon-based nanostructures. The nanoscopic porous morphology of the T-GR-based electrodes made a significant contribution in increasing the BET surface as well as the specific capacitance of graphene. T-GR, with a capacitance of 354.1 Fg-1 at 5 mVs-1 and 264 Fg-1 at 100 mVs-1, exhibits excellent performance as a supercapacitor.

Sol-gel processed thin-layer ruthenium oxide/carbon black supercapacitors: A revelation of the energy storage issues

NASA Astrophysics Data System (ADS)

Panić, V. V.; Dekanski, A. B.; Stevanović, R. M.

Hydrous ruthenium oxide/carbon black nanocomposites were prepared by impregnation of the carbon blacks by differently aged inorganic RuO 2 sols, i.e. of different particle size. Commercial Black Pearls 2000 ® (BP) and Vulcan ® XC-72 R (XC) carbon blacks were used. Capacitive properties of BP/RuO 2 and XC/RuO 2 composites were investigated by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) in H 2SO 4 solution. Capacitance values and capacitance distribution through the composite porous layer were found different if high- (BP) and low- (XC) surface-area carbons are used as supports. The aging time (particle size) of Ru oxide sol as well as the concentration of the oxide solid phase in the impregnating medium influenced the capacitive performance of prepared composites. While the capacitance of BP-supported oxide decreases with the aging time, the capacitive ability of XC-supported oxide is promoted with increasing oxide particle size. The increase in concentration of the oxide solid phase in the impregnating medium caused an improvement of charging/discharging characteristics due to pronounced pseudocapacitance contribution of the increasing amount of inserted oxide. The effects of these variables in the impregnation process on the energy storage capabilities of prepared nanocomposites are envisaged as a result of intrinsic way of population of the pores of carbon material by hydrous Ru oxide particle.

Real-time estimation of paracellular permeability of cerebral endothelial cells by capacitance sensor array

NASA Astrophysics Data System (ADS)

Hyun Jo, Dong; Lee, Rimi; Hyoung Kim, Jin; Oh Jun, Hyoung; Geol Lee, Tae; Hun Kim, Jeong

2015-06-01

Vascular integrity is important in maintaining homeostasis of brain microenvironments. In various brain diseases including Alzheimer’s disease, stroke, and multiple sclerosis, increased paracellular permeability due to breakdown of blood-brain barrier is linked with initiation and progression of pathological conditions. We developed a capacitance sensor array to monitor dielectric responses of cerebral endothelial cell monolayer, which could be utilized to evaluate the integrity of brain microvasculature. Our system measured real-time capacitance values which demonstrated frequency- and time-dependent variations. With the measurement of capacitance at the frequency of 100 Hz, we could differentiate the effects of vascular endothelial growth factor (VEGF), a representative permeability-inducing factor, on endothelial cells and quantitatively analyse the normalized values. Interestingly, we showed differential capacitance values according to the status of endothelial cell monolayer, confluent or sparse, evidencing that the integrity of monolayer was associated with capacitance values. Another notable feature was that we could evaluate the expression of molecules in samples in our system with the reference of real-time capacitance values. We suggest that this dielectric spectroscopy system could be successfully implanted as a novel in vitro assay in the investigation of the roles of paracellular permeability in various brain diseases.

Nitride based quantum well light-emitting devices having improved current injection efficiency

DOEpatents

Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald

2014-12-09

A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.

Simulations of Cyclic Voltammetry for Electric Double Layers in Asymmetric Electrolytes: A Generalized Modified Poisson-Nernst-Planck Model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hainan; Thiele, Alexander; Pilon, Laurent

2013-11-15

This paper presents a generalized modified Poisson–Nernst–Planck (MPNP) model derived from first principles based on excess chemical potential and Langmuir activity coefficient to simulate electric double-layer dynamics in asymmetric electrolytes. The model accounts simultaneously for (1) asymmetric electrolytes with (2) multiple ion species, (3) finite ion sizes, and (4) Stern and diffuse layers along with Ohmic potential drop in the electrode. It was used to simulate cyclic voltammetry (CV) measurements for binary asymmetric electrolytes. The results demonstrated that the current density increased significantly with decreasing ion diameter and/or increasing valency |z i| of either ion species. By contrast, the ionmore » diffusion coefficients affected the CV curves and capacitance only at large scan rates. Dimensional analysis was also performed, and 11 dimensionless numbers were identified to govern the CV measurements of the electric double layer in binary asymmetric electrolytes between two identical planar electrodes of finite thickness. A self-similar behavior was identified for the electric double-layer integral capacitance estimated from CV measurement simulations. Two regimes were identified by comparing the half cycle period τ CV and the “RC time scale” τ RC corresponding to the characteristic time of ions’ electrodiffusion. For τ RC ← τ CV, quasi-equilibrium conditions prevailed and the capacitance was diffusion-independent while for τ RC → τ CV, the capacitance was diffusion-limited. The effect of the electrode was captured by the dimensionless electrode electrical conductivity representing the ratio of characteristic times associated with charge transport in the electrolyte and that in the electrode. The model developed here will be useful for simulating and designing various practical electrochemical, colloidal, and biological systems for a wide range of applications.« less

Pseudocapacitive and hierarchically ordered porous electrode materials supercapacitors

NASA Astrophysics Data System (ADS)

Saruhan, B.; Gönüllü, Y.; Arndt, B.

2013-05-01

Commercially available double layer capacitors store energy in an electrostatic field. This forms in the form of a double layer by charged particles arranged on two electrodes consisting mostly of active carbon. Such double layer capacitors exhibit a low energy density, so that components with large capacity according to large electrode areas are required. Our research focuses on the development of new electrode materials to realize the production of electrical energy storage systems with high energy density and high power density. Metal oxide based electrodes increase the energy density and the capacitance by addition of pseudo capacitance to the static capacitance present by the double layer super-capacitor electrodes. The so-called hybrid asymmetric cell capacitors combine both types of energy storage in a single component. In this work, the production routes followed in our laboratories for synthesis of nano-porous and aligned metal oxide electrodes using the electrochemical and sputter deposition as well as anodization methods will be described. Our characterisation studies concentrate on electrodes having redox metal-oxides (e.g. MnOx and WOx) and hierarchically aligned nano-porous Li-doped TiO2-NTs. The material specific and electrochemical properties achieved with these electrodes will be presented.

Mechanically delaminated few layered MoS2 nanosheets based high performance wire type solid-state symmetric supercapacitors

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Karthikeyan; Pazhamalai, Parthiban; Veerasubramani, Ganesh Kumar; Kim, Sang Jae

2016-07-01

Two dimensional nanostructures are increasingly used as electrode materials in flexible supercapacitors for portable electronic applications. Herein, we demonstrated a ball milling approach for achieving few layered molybdenum disulfide (MoS2) via exfoliation from their bulk. Physico-chemical characterizations such as X-ray diffraction, field emission scanning electron microscope, and laser Raman analyses confirmed the occurrence of exfoliated MoS2 sheets with few layers from their bulk via ball milling process. MoS2 based wire type solid state supercapacitors (WSCs) are fabricated and examined using cyclic voltammetry (CV), electrochemical impedance spectroscopy, and galvanostatic charge discharge (CD) measurements. The presence of rectangular shaped CV curves and symmetric triangular shaped CD profiles suggested the mechanism of charge storage in MoS2 WSC is due to the formation of electrochemical double layer capacitance. The MoS2 WSC device delivered a specific capacitance of 119 μF cm-1, and energy density of 8.1 nW h cm-1 with better capacitance retention of about 89.36% over 2500 cycles, which ensures the use of the ball milled MoS2 for electrochemical energy storage devices.

Dye based photodiodes for solar energy applications

NASA Astrophysics Data System (ADS)

Mensah-Darkwa, K.; Ocaya, R.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Soylu, M.; Gupta, R. K.; Yakuphanoglu, F.

2017-10-01

Coumarin (CO) doped methylene blue (MB) organic photo-devices were fabricated. The CO-doped MB (0.00, 0.01, 0.03, 0.05, 0.1 wt% CO) were coated onto the surface of a p-type Si substrate by drop casting method. Some electrical parameters of the devices have been examined by current-voltage ( I- V), capacitance-voltage ( C- V), and conductance-voltage ( G- V) measurements. The fabricated devices had excellent rectifying properties. The diode exhibits a non-ideal diode behavior due to the series resistance and interface layer. The ideality factor, the barrier height, and the series resistance values of the diode as a function of doping and light illumination have been estimated using modified Cheung-Cheung and Norde's method. The highest I photo/ I dark photosensitivity of 5606 was observed for the diode having 0.01 CO doping at 100 mW/cm2 under -3 V. Furthermore, change of capacitance and conductance measurements with frequency is related to the existence of interface states. A maximum power conversion efficiency of 2.4% is estimated for the fabricated devices. The results reveal that coumarin-doped methylene blue/ p-Si heterojunction can be used as a photodiode in optoelectronic applications. It is also usable in low-power photovoltaic applications.

Electrode Mass Balancing as an Inexpensive and Simple Method to Increase the Capacitance of Electric Double-Layer Capacitors

PubMed Central

Andres, Britta; Engström, Ann-Christine; Blomquist, Nicklas; Forsberg, Sven; Dahlström, Christina; Olin, Håkan

2016-01-01

Symmetric electric double-layer capacitors (EDLCs) have equal masses of the same active material in both electrodes. However, having equal electrode masses may prevent the EDLC to have the largest possible specific capacitance if the sizes of the hydrated anions and cations in the electrolyte differ because the electrodes and the electrolyte may not be completely utilized. Here we demonstrate how this issue can be resolved by mass balancing. If the electrode masses are adjusted according to the size of the ions, one can easily increase an EDLC’s specific capacitance. To that end, we performed galvanostatic cycling to measure the capacitances of symmetric EDLCs with different electrode mass ratios using four aqueous electrolytes— Na2SO4, H2SO4, NaOH, and KOH (all with a concentration of 1 M)—and compared these to the theoretical optimal electrode mass ratio that we calculated using the sizes of the hydrated ions. Both the theoretical and experimental values revealed lower-than-1 optimal electrode ratios for all electrolytes except KOH. The largest increase in capacitance was obtained for EDLCs with NaOH as electrolyte. Specifically, we demonstrate an increase of the specific capacitance by 8.6% by adjusting the electrode mass ratio from 1 to 0.86. Our findings demonstrate that electrode mass balancing is a simple and inexpensive method to increase the capacitance of EDLCs. Furthermore, our results imply that one can reduce the amount of unused material in EDLCs and thus decrease their weight, volume and cost. PMID:27658253

Surfactant-treated graphene covered polyaniline nanowires for supercapacitor electrode

NASA Astrophysics Data System (ADS)

Rajagopalan, Balasubramaniyan; Hur, Seung Hyun; Chung, Jin Suk

2015-04-01

Surfactant-treated graphene/polyaniline (G/PANI) nanocomposites were prepared by the MnO2 template-aided oxidative polymerization of aniline (ANI) on the surfactant-treated graphene sheets. The electrochemical performances of the G/PANI nanocomposites in a three-electrode system using an aqueous sulfuric acid as an electrolyte exhibited a specific capacitance of 436 F g-1 at 1 A g-1, which is much higher than the specific capacitance of pure PANI (367 F g-1). Such a higher specific capacitance of the G/PANI nanocomposite inferred an excellent synergistic effect of respective pseudocapacitance and electrical double-layer capacitance of PANI and graphene.

Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods

NASA Astrophysics Data System (ADS)

Tiagulskyi, Stanislav; Yatskiv, Roman; Grym, Jan

2018-02-01

A rectifying junction was prepared by casting a drop of colloidal graphite on the surface of an InP substrate. The electrophysical properties of graphite/InP junctions were investigated in a wide temperature range. Temperature-dependent I-V characteristics of the graphite/InP junctions are explained by the thermionic emission mechanism. The Schottky barrier height (SBH) and the ideality factor were found to be 0.9 eV and 1.47, respectively. The large value of the SBH and its weak temperature dependence are explained by lateral homogeneity of the junction, which is related to the structure of the graphite layer. The moderate disagreement between the current-voltage and capacitance-voltage measurements is attributed to the formation of interfacial native oxide film on the InP surface.

Colossal dielectric constant and relaxation behaviors in Pr:SrTiO{sub 3} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu Cheng; Liu Peng; Zhou Jianping

2010-05-15

Sr{sub 1-x}Pr{sub x}TiO{sub 3} ceramics (0.00{<=}x{<=}0.03) were prepared by a traditional solid-state reaction method. Two relaxation processes (marked as A and B) of the Sr{sub 0.09}Pr{sub 0.01}TiO{sub 3} ceramics were investigated by analyzing the E{sub a} values obtained from the Arrhenius law. Colossal dielectric constant (CDC) was first obtained in Sr{sub 0.09}Pr{sub 0.01}TiO{sub 3} ceramics, whose permittivity was up to 3000 (1 kHz, room temperature), greater than that of pure SrTiO{sub 3} ceramics and samples with more Pr addition (x=0.02 and 0.03). This CDC behavior was related to the internal barrier layer capacitance mechanism.

Traps in AlGaN /GaN/SiC heterostructures studied by deep level transient spectroscopy

NASA Astrophysics Data System (ADS)

Fang, Z.-Q.; Look, D. C.; Kim, D. H.; Adesida, I.

2005-10-01

AlGaN /GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2×10-12cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.

A Study of Dip-Coatable, High-Capacitance Ion Gel Dielectrics for 3D EWOD Device Fabrication

PubMed Central

Clement, Carlos E.; Jiang, Dongyue; Thio, Si Kuan; Park, Sung-Yong

2017-01-01

We present a dip-coatable, high-capacitance ion gel dielectric for scalable fabrication of three-dimensional (3D) electrowetting-on-dielectric (EWOD) devices such as an n × n liquid prism array. Due to the formation of a nanometer-thick electric double layer (EDL) capacitor, an ion gel dielectric offers two to three orders higher specific capacitance (c ≈ 10 μF/cm2) than that of conventional dielectrics such as SiO2. However, the previous spin-coating method used for gel layer deposition poses several issues for 3D EWOD device fabrication, particularly when assembling multiple modules. Not only does the spin-coating process require multiple repetitions per module, but the ion gel layer also comes in risks of damage or contamination due to handling errors caused during assembly. In addition, it was observed that the chemical formulation previously used for the spin-coating method causes the surface defects on the dip-coated gel layers and thus leads to poor EWOD performance. In this paper, we alternatively propose a dip-coating method with modified gel solutions to obtain defect-free, functional ion gel layers without the issues arising from the spin-coating method for 3D device fabrication. A dip-coating approach offers a single-step coating solution with the benefits of simplicity, scalability, and high throughput for deposition of high-capacitance gel layers on non-planar EWOD devices. An ion gel solution was prepared by combining the [EMIM][TFSI] ionic liquid and the [P(VDF-HFP)] copolymer at various wt % ratios in acetone solvent. Experimental studies were conducted to fully understand the effects of chemical composition ratios in the gel solution and how varying thicknesses of ion gel and Teflon layers affects EWOD performance. The effectiveness and potentiality of dip-coatable gel layers for 3D EWOD devices have been demonstrated through fabricating 5 × 1 arrayed liquid prisms using a single-step dip-coating method. Each prism module has been individually controlled to achieve spatial beam steering without the need for bulky mechanical moving parts. PMID:28772400

A Study of Dip-Coatable, High-Capacitance Ion Gel Dielectrics for 3D EWOD Device Fabrication.

PubMed

Clement, Carlos E; Jiang, Dongyue; Thio, Si Kuan; Park, Sung-Yong

2017-01-05

We present a dip-coatable, high-capacitance ion gel dielectric for scalable fabrication of three-dimensional (3D) electrowetting-on-dielectric (EWOD) devices such as an n × n liquid prism array. Due to the formation of a nanometer-thick electric double layer (EDL) capacitor, an ion gel dielectric offers two to three orders higher specific capacitance ( c ≈ 10 μF/cm²) than that of conventional dielectrics such as SiO₂. However, the previous spin-coating method used for gel layer deposition poses several issues for 3D EWOD device fabrication, particularly when assembling multiple modules. Not only does the spin-coating process require multiple repetitions per module, but the ion gel layer also comes in risks of damage or contamination due to handling errors caused during assembly. In addition, it was observed that the chemical formulation previously used for the spin-coating method causes the surface defects on the dip-coated gel layers and thus leads to poor EWOD performance. In this paper, we alternatively propose a dip-coating method with modified gel solutions to obtain defect-free, functional ion gel layers without the issues arising from the spin-coating method for 3D device fabrication. A dip-coating approach offers a single-step coating solution with the benefits of simplicity, scalability, and high throughput for deposition of high-capacitance gel layers on non-planar EWOD devices. An ion gel solution was prepared by combining the [EMIM][TFSI] ionic liquid and the [P(VDF-HFP)] copolymer at various wt % ratios in acetone solvent. Experimental studies were conducted to fully understand the effects of chemical composition ratios in the gel solution and how varying thicknesses of ion gel and Teflon layers affects EWOD performance. The effectiveness and potentiality of dip-coatable gel layers for 3D EWOD devices have been demonstrated through fabricating 5 × 1 arrayed liquid prisms using a single-step dip-coating method. Each prism module has been individually controlled to achieve spatial beam steering without the need for bulky mechanical moving parts.

Chemical splitting of multiwalled carbon nanotubes to enhance electrochemical capacitance for supercapacitors

NASA Astrophysics Data System (ADS)

Li, Xinlu; Li, Tongtao; Zhang, Xinlin; Zhong, Qineng; Li, Hongyi; Huang, Jiamu

2014-06-01

Multiwalled carbon nanotubes (MWCNTs) were chemically split and self-assembled to a flexible porous paper made of graphene oxide nanoribbons (GONRs). The morphology and microstructure of the pristine MWCNTs and GONRs were analyzed by transmission electron microscopy, scanning electron microscopy, X-ray diffraction, Raman spectroscopy and Fourier transform infrared spectroscopy. And the specific surface area and porosity structure were measured by N2 adsorption-desorption. The longitudinally split MWCNTs show an enhancement in specific capacitance from 21 F g-1 to 156 F g-1 compared with the pristine counterpart at 0.1 A g-1 in a 6 M KOH aqueous electrolytes. The electrochemical experiments prove that the chemical splitting of MWCNTs will make inner carbon layers opened and exposed to electrochemical double layers, which can effectively improve the electrochemical capacitance for supercapacitors.

Progress on single barrier varactors for submillimeter wave power generation

NASA Technical Reports Server (NTRS)

Nilsen, Svein M.; Groenqvist, Hans; Hjelmgren, Hans; Rydberg, Anders; Kollberg, Erik L.

1992-01-01

Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modeling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated I-V, and C-V characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modeled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modeled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes.

Research into the use of pyrolytic oxides and polymers for the fabrication of thin film high energy capacitors

NASA Technical Reports Server (NTRS)

Nevin, J. H.

1983-01-01

Construction, capacitance and dissipation factor, and electrode materials for single layer capacitors are discussed. Basic construction, phosphosilicate glass, ten layer capacitors, twenty layer capacitors, stress measurements, buffered oxide layers, and 30 layer capacitors are also discussed. Spin-on phosphosilicate glass is addressed. Polymers as dielectric materials are also considered.

Effect of annealing temperature on the electrical properties of Au/Ta2O5/n-GaN metal-insulator-semiconductor (MIS) structure

NASA Astrophysics Data System (ADS)

Prasanna Lakshmi, B.; Rajagopal Reddy, V.; Janardhanam, V.; Siva Pratap Reddy, M.; Lee, Jung-Hee

2013-11-01

We report on the effect of an annealing temperature on the electrical properties of Au/Ta2O5/n-GaN metal-insulator-semiconductor (MIS) structure by current-voltage ( I- V) and capacitance-voltage ( C- V) measurements. The measured Schottky barrier height ( Φ bo) and ideality factor n values of the as-deposited Au/Ta2O5/n-GaN MIS structure are 0.93 eV ( I- V) and 1.19. The barrier height (BH) increases to 1.03 eV and ideality factor decreases to 1.13 upon annealing at 500 ∘C for 1 min under nitrogen ambient. When the contact is annealed at 600 ∘C, the barrier height decreases and the ideality factor increases to 0.99 eV and 1.15. The barrier heights obtained from the C- V measurements are higher than those obtained from I- V measurements, and this indicates the existence of spatial inhomogeneity at the interface. Cheung’s functions are also used to calculate the barrier height ( Φ bo), ideality factor ( n), and series resistance ( R s ) of the Au/Ta2O5/n-GaN MIS structure. Investigations reveal that the Schottky emission is the dominant mechanism and the Poole-Frenkel emission occurs only in the high voltage region. The energy distribution of interface states is determined from the forward bias I- V characteristics by taking into account the bias dependence of the effective barrier height. It is observed that the density value of interface states for the annealed samples with interfacial layer is lower than that of the density value of interface states of the as-deposited sample.

Few-layered Ni(OH)2 nanosheets for high-performance supercapacitors

NASA Astrophysics Data System (ADS)

Sun, Wenping; Rui, Xianhong; Ulaganathan, Mani; Madhavi, Srinivasan; Yan, Qingyu

2015-11-01

Few-layered Ni(OH)2 nanosheets (4-5 nm in thickness) are synthesized towards high-performance supercapacitors. The ultrathin Ni(OH)2 nanosheets show high specific capacitance and good rate capability in both three-electrode and asymmetric devices. In the three-electrode device, the Ni(OH)2 nanosheets deliver a high capacitance of 2064 F g-1 at 2 A g-1, and the capacitance still has a retention of 1837 F g-1 at a high current density of 20 A g-1. Such excellent performance is by far one of the best for Ni(OH)2 electrodes. In the two-electrode asymmetric device, the specific capacitance is 248 F g-1 at 1 A g-1, and reaches 113 F g-1 at 20 A g-1. The capacitance of the asymmetric device maintains to be 166 F g-1 during the 4000th cycle at 2 A g-1, suggesting good cycling stability of the device. Besides, the asymmetric device exhibits gravimetric energy density of 22 Wh kg-1 at a power density of 0.8 kW kg-1. The present results demonstrate that the ultrathin Ni(OH)2 nanosheets are highly attractive electrode materials for achieving fast charging/discharging and high-capacity supercapacitors.

Holey nickel-cobalt layered double hydroxide thin sheets with ultrahigh areal capacitance

NASA Astrophysics Data System (ADS)

Zhi, Lei; Zhang, Wenliang; Dang, Liqin; Sun, Jie; Shi, Feng; Xu, Hua; Liu, Zonghuai; Lei, Zhibin

2018-05-01

Strong coupling of electroactive components on conductive carbonaceous matrix to fabricate flexible hybrid electrodes represents a promising approach towards high performance supercapacitors. This work reports the fabrication of holey nickel cobalt layered double hydroxide (NiCo-LDH) nanosheets that are vertically grown on the cotton cloth-derived activated textile carbon (aTC). The abundant nanoholes on the thin-sheet NiCo-LDH not only enhance the electrode efficiency for efficient Faradaic redox reactions but also facilitate access of electrolyte to the electrode surface, thus giving rise to 70% capacitance arising from their outer surface. As a result, the aTC-NiCo hybrid electrode is capable of simultaneously achieving extremely high areal capacitance (6.37 F cm-2), mass capacitance (525 F g-1) and volumetric capacitance (249 F cm-3) at a practical level of mass loading (6.72 mg cm-2). Moreover, a solid-state asymmetric capacitor built with aTC-NiCo as positive electrode and active carbon-coated on aTC as negative electrode can deliver a volumetric energy density of 7.4 mWh cm-3 at a power density of 103 mW cm-3, while preserving a superior power performance, satisfying cycling stability and good mechanical flexibility.

Quantifying the thickness of the electrical double layer neutralizing a planar electrode: the capacitive compactness.

PubMed

Guerrero-García, Guillermo Iván; González-Tovar, Enrique; Chávez-Páez, Martín; Kłos, Jacek; Lamperski, Stanisław

2017-12-20

The spatial extension of the ionic cloud neutralizing a charged colloid or an electrode is usually characterized by the Debye length associated with the supporting charged fluid in the bulk. This spatial length arises naturally in the linear Poisson-Boltzmann theory of point charges, which is the cornerstone of the widely used Derjaguin-Landau-Verwey-Overbeek formalism describing the colloidal stability of electrified macroparticles. By definition, the Debye length is independent of important physical features of charged solutions such as the colloidal charge, electrostatic ion correlations, ionic excluded volume effects, or specific short-range interactions, just to mention a few. In order to include consistently these features to describe more accurately the thickness of the electrical double layer of an inhomogeneous charged fluid in planar geometry, we propose here the use of the capacitive compactness concept as a generalization of the compactness of the spherical electrical double layer around a small macroion (González-Tovar et al., J. Chem. Phys. 2004, 120, 9782). To exemplify the usefulness of the capacitive compactness to characterize strongly coupled charged fluids in external electric fields, we use integral equations theory and Monte Carlo simulations to analyze the electrical properties of a model molten salt near a planar electrode. In particular, we study the electrode's charge neutralization, and the maximum inversion of the net charge per unit area of the electrode-molten salt system as a function of the ionic concentration, and the electrode's charge. The behaviour of the associated capacitive compactness is interpreted in terms of the charge neutralization capacity of the highly correlated charged fluid, which evidences a shrinking/expansion of the electrical double layer at a microscopic level. The capacitive compactness and its first two derivatives are expressed in terms of experimentally measurable macroscopic properties such as the differential and integral capacity, the electrode's surface charge density, and the mean electrostatic potential at the electrode's surface.

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

NASA Astrophysics Data System (ADS)

Jian, Guangzhong; He, Qiming; Mu, Wenxiang; Fu, Bo; Dong, Hang; Qin, Yuan; Zhang, Ying; Xue, Huiwen; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tao, Xutang; Liu, Ming

2018-01-01

β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current-voltage and capacitance-voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ ¯ b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A.cm-2.K-2, which is close to the theoretical value of 41.11 A.cm-2.K-2. The differences between the barrier heights determined using the capacitance-voltage and current-voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

Energize Electrochemical Double Layer Capacitor by Introducing an Ambipolar Organic Redox Radical in Electrolyte.

PubMed

Wang, Yonggang; Hu, Lintong; Zhang, Yue; Shi, Chao; Guo, Kai; Zhai, Tianyou; Li, Huiqiao

2018-05-24

Carbon based electrochemical double layer capacitors (EDLCs) generally exhibit high power and long life, but low energy density/capacitance. Pore/morphology optimization and pseudocapacitive materials modification of carbon materials have been used to improve electrode capacitance, but leading to the consumption of tap density, conductivity and stability. Introducing soluble redox mediators into electrolyte is a promising alternative to improve the capacitance of electrode. However, it is difficult to find one redox mediator that can provide additional capacitance for both positive and negative electrodes simultaneously. Here, an ambipolar organic radical, 2, 2, 6, 6-tetramethylpiperidinyloxyl (TEMPO) is first introduced to the electrolyte, which can substantially contribute additional pseudocapacitance by oxidation at the positive electrode and reduction at the negative electrode simultaneously. The EDLC with TEMPO mediator delivers an energy density as high as 51 Wh kg-1, 2.4 times of the capacitor without TEMPO, and a long cycle stability over 4000 cycles. The achieved results potentially point a new way to improve the energy density of EDLCs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Important parameters affecting the cell voltage of aqueous electrical double-layer capacitors

NASA Astrophysics Data System (ADS)

Wu, Tzu-Ho; Hsu, Chun-Tsung; Hu, Chi-Chang; Hardwick, Laurence J.

2013-11-01

This study discusses and demonstrates how the open-circuit potential and charges stored in the working potential window on positive and negative electrodes affect the cell voltage of carbon-based electrical double-layer capacitors (EDLCs) in aqueous electrolytes. An EDLC consisting of two activated carbon electrodes is employed as the model system for identifying these key parameters although the potential window of water decomposition can be simply determined by voltammetric methods. First, the capacitive performances of an EDLC with the same charge on positive and negative electrodes are evaluated by cyclic voltammetric, charge-discharge, electrochemical impedance spectroscopic (EIS) analyses, and inductance-capacitance-resistance meter (LCR meter). The principles for obtaining the highest acceptable cell voltage of such symmetric ECs with excellent reversibility and capacitor-like behaviour are proposed. Aqueous charge-balanced EDLCs can be operated as high as 2.0 V with high energy efficiency (about 90%) and only 4% capacitance loss after the 600-cycle stability checking. The necessity of charge balance (but not capacitance balance) for positive and negative electrodes is substantiated from the lower acceptable cell voltage of charge-unbalanced EDLCs.

"Egg-Box"-Assisted Fabrication of Porous Carbon with Small Mesopores for High-Rate Electric Double Layer Capacitors.

PubMed

Kang, Danmiao; Liu, Qinglei; Gu, Jiajun; Su, Yishi; Zhang, Wang; Zhang, Di

2015-11-24

Here we report a method to fabricate porous carbon with small mesopores around 2-4 nm by simple activation of charcoals derived from carbonization of seaweed consisting of microcrystalline domains formed by the "egg-box" model. The existence of mesopores in charcoals leads to a high specific surface area up to 3270 m(2) g(-1), with 95% surface area provided by small mesopores. This special pore structure shows high adaptability when used as electrode materials for an electric double layer capacitor, especially at high charge-discharge rate. The gravimetric capacitance values of the porous carbon are 425 and 210 F g(-1) and volumetric capacitance values are 242 and 120 F cm(-3) in 1 M H2SO4 and 1 M TEA BF4/AN, respectively. The capacitances even remain at 280 F g(-1) (160 F cm(-3)) at 100 A g(-1) and 156 F g(-1) (90 F cm(-3)) at 50 A g(-1) in the aqueous and organic electrolytes, demonstrating excellent high-rate capacitive performance.

Environmentally friendly power generator based on moving liquid dielectric and double layer effect.

PubMed

Huynh, D H; Nguyen, T C; Nguyen, P D; Abeyrathne, C D; Hossain, Md S; Evans, R; Skafidas, E

2016-06-03

An electrostatic power generator converts mechanical energy to electrical energy by utilising the principle of variable capacitance. This change in capacitance is usually achieved by varying the gap or overlap between two parallel metallic plates. This paper proposes a novel electrostatic micro power generator where the change in capacitance is achieved by the movement of an aqueous solution of NaCl. A significant change in capacitance is achieved due to the higher than air dielectric constant of water and the Helmholtz double layer capacitor formed by ion separation at the electrode interfaces. The proposed device has significant advantages over traditional electrostatic devices which include low bias voltage and low mechanical frequency of operation. This is critical if the proposed device is to have utility in harvesting power from the environment. A figure of merit exceeding 10000(10(8)μW)/(mm(2)HzV(2)) which is two orders of magnitude greater than previous devices, is demonstrated for a prototype operating at a bias voltage of 1.2 V and a droplet frequency of 6 Hz. Concepts are presented for large scale power harvesting.

Enhanced tunability of magneto-impedance and magneto-capacitance in annealed Metglas/PZT magnetoelectric composites

NASA Astrophysics Data System (ADS)

Leung, Chung Ming; Zhuang, Xin; Xu, Junran; Li, Jiefang; Zhang, Jitao; Srinivasan, G.; Viehland, D.

2018-05-01

This report is on a new class of magnetostatically tunable magneto-impedance and magneto-capacitance devices based on a composite of ferromagnetic Metglas and ferroelectric lead zirconate titanate (PZT). Layered magneto-electric (ME) composites with annealed Metglas and PZT were studied in a longitudinal in-plane magnetic field-transverse electric field (L-T) mode. It was found that the degree of tunability was dependent on the annealing temperature of Metglas. An impedance tunability (ΔZ/Z0) of ≥400% was obtained at the electromechanical resonance (EMR) frequency (fr) for a sample with Metglas layers annealed at Ta = 500oC. This tunability is a factor of two higher than for composites with Metglas annealed at 350oC. The tunability of the capacitance, (ΔC/C0), was found to be 290% and -135k% at resonance and antiresonance, respectively, for Ta = 500oC. These results provide clear evidence for improvement in static magnetic field tunability of impedance and capacitance of ME composites with the use of annealed Metglas and are of importance for their potential use in tunable electronic applications.

An experimental/theoretical method to measure the capacitive compactness of an aqueous electrolyte surrounding a spherical charged colloid

NASA Astrophysics Data System (ADS)

Moraila-Martínez, Carmen Lucía; Guerrero-García, Guillermo Iván; Chávez-Páez, Martín; González-Tovar, Enrique

2018-04-01

The capacitive compactness has been introduced very recently [G. I. Guerrero-García et al., Phys. Chem. Chem. Phys. 20, 262-275 (2018)] as a robust and accurate measure to quantify the thickness, or spatial extension, of the electrical double layer next to either an infinite charged electrode or a spherical macroion. We propose here an experimental/theoretical scheme to determine the capacitive compactness of a spherical electrical double layer that relies on the calculation of the electrokinetic charge and the associated mean electrostatic potential at the macroparticle's surface. This is achieved by numerically solving the non-linear Poisson-Boltzmann equation of point ions around a colloidal sphere and matching the corresponding theoretical mobility, predicted by the O'Brien and White theory [J. Chem. Soc., Faraday Trans. 2 74, 1607-1626 (1978)], with experimental measurements of the electrophoretic mobility under the same conditions. This novel method is used to calculate the capacitive compactness of NaCl and CaCl2 electrolytes surrounding a negatively charged polystyrene particle as a function of the salt concentration.

Sensitive Precise p H Measurement with Large-Area Graphene Field-Effect Transistors at the Quantum-Capacitance Limit

NASA Astrophysics Data System (ADS)

Fakih, Ibrahim; Mahvash, Farzaneh; Siaj, Mohamed; Szkopek, Thomas

2017-10-01

A challenge for p H sensing is decreasing the minimum measurable p H per unit bandwidth in an economical fashion. Minimizing noise to reach the inherent limit imposed by charge fluctuation remains an obstacle. We demonstrate here graphene-based ion-sensing field-effect transistors that saturate the physical limit of sensitivity, defined here as the change in electrical response with respect to p H , and achieve a precision limited by charge-fluctuation noise at the sensing layer. We present a model outlining the necessity for maximizing the device carrier mobility, active sensing area, and capacitive coupling in order to minimize noise. We encapsulate large-area graphene with an ultrathin layer of parylene, a hydrophobic polymer, and deposit an ultrathin, stoichiometric p H -sensing layer of either aluminum oxide or tantalum pentoxide. With these structures, we achieve gate capacitances ˜0.6 μ F /cm2 , approaching the quantum-capacitance limit inherent to graphene, along with a near-Nernstian p H response of ˜55 ±2 mV /p H . We observe field-effect mobilities as high as 7000 cm2 V-1 s-1 with minimal hysteresis as a result of the parylene encapsulation. A detection limit of 0.1 m p H in a 60-Hz electrical bandwidth is observed in optimized graphene transistors.

Penicillin biosensor based on a capacitive field-effect structure functionalized with a dendrimer/carbon nanotube multilayer.

PubMed

Siqueira, José R; Abouzar, Maryam H; Poghossian, Arshak; Zucolotto, Valtencir; Oliveira, Osvaldo N; Schöning, Michael J

2009-10-15

Silicon-based sensors incorporating biomolecules are advantageous for processing and possible biological recognition in a small, reliable and rugged manufactured device. In this study, we report on the functionalization of field-effect (bio-)chemical sensors with layer-by-layer (LbL) films containing single-walled carbon nanotubes (SWNTs) and polyamidoamine (PAMAM) dendrimers. A capacitive electrolyte-insulator-semiconductor (EIS) structure modified with carbon nanotubes (EIS-NT) was built, which could be used as a penicillin biosensor. From atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) images, the LbL films were shown to be highly porous due to interpenetration of SWNTs into the dendrimer layers. Capacitance-voltage (C/V) measurements pointed to a high pH sensitivity of ca. 55 mV/pH for the EIS-NT structures. The biosensing ability towards penicillin of an EIS-NT-penicillinase biosensor was also observed as the flat-band voltage shifted to lower potentials at different penicillin concentrations. A dynamic response of penicillin concentrations, ranging from 5.0 microM to 25 mM, was evaluated for an EIS-NT with the penicillinase enzyme immobilized onto the surfaces, via constant-capacitance (ConCap) measurements, achieving a sensitivity of ca. 116 mV/decade. The presence of the nanostructured PAMAM/SWNT LbL film led to sensors with higher sensitivity and better performance.

Few-layered MoSe2 nanosheets as an advanced electrode material for supercapacitors.

PubMed

Balasingam, Suresh Kannan; Lee, Jae Sung; Jun, Yongseok

2015-09-21

We report the synthesis of few-layered MoSe2 nanosheets using a facile hydrothermal method and their electrochemical charge storage behavior. A systematic study of the structure and morphology of the as-synthesized MoSe2 nanosheets was performed. The downward peak shift in the Raman spectrum and the high-resolution transmission electron microscopy images confirmed the formation of few-layered nanosheets. The electrochemical energy-storage behavior of MoSe2 nanosheets was also investigated for supercapacitor applications in a symmetric cell configuration. The MoSe2 nanosheet electrode exhibited a maximum specific capacitance of 198.9 F g(-1) and the symmetric device showed 49.7 F g(-1) at a scan rate of 2 mV s(-1). A capacitance retention of approximately 75% was observed even after 10 000 cycles at a high charge-discharge current density of 5 A g(-1). The two-dimensional MoSe2 nanosheets exhibited a high specific capacitance and good cyclic stability, which makes it a promising electrode material for supercapacitor applications.

High-Performance One-Body Core/Shell Nanowire Supercapacitor Enabled by Conformal Growth of Capacitive 2D WS2 Layers.

PubMed

Choudhary, Nitin; Li, Chao; Chung, Hee-Suk; Moore, Julian; Thomas, Jayan; Jung, Yeonwoong

2016-12-27

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) have emerged as promising capacitive materials for supercapacitor devices owing to their intrinsically layered structure and large surface areas. Hierarchically integrating 2D TMDs with other functional nanomaterials has recently been pursued to improve electrochemical performances; however, it often suffers from limited cyclic stabilities and capacitance losses due to the poor structural integrity at the interfaces of randomly assembled materials. Here, we report high-performance core/shell nanowire supercapacitors based on an array of one-dimensional (1D) nanowires seamlessly integrated with conformal 2D TMD layers. The 1D and 2D supercapacitor components possess "one-body" geometry with atomically sharp and structurally robust core/shell interfaces, as they were spontaneously converted from identical metal current collectors via sequential oxidation/sulfurization. These hybrid supercapacitors outperform previously developed any stand-alone 2D TMD-based supercapacitors; particularly, exhibiting an exceptional charge-discharge retention over 30,000 cycles owing to their structural robustness, suggesting great potential for unconventional energy storage technologies.

Impact of magnetite nanoparticle incorporation on optical and electrical properties of nanocomposite LbL assemblies.

PubMed

Yashchenok, Alexey M; Gorin, Dmitry A; Badylevich, Mikhail; Serdobintsev, Alexey A; Bedard, Matthieu; Fedorenko, Yanina G; Khomutov, Gennady B; Grigoriev, Dmitri O; Möhwald, Helmuth

2010-09-21

Optical and electrical properties of polyelectrolyte/iron oxide nanocomposite planar films on silicon substrates were investigated for different amount of iron oxide nanoparticles incorporated in the films. The nanocomposite assemblies prepared by the layer-by-layer assembly technique were characterized by ellipsometry, atomic force microscopy, and secondary ion mass-spectrometry. Absorption spectra of the films reveal a shift of the optical absorption edge to higher energy when the number of deposited layers decreases. Capacitance-voltage and current-voltage measurements were applied to study the electrical properties of metal-oxide-semiconductor structures prepared by thermal evaporation of gold electrodes on nanocomposite films. The capacitance-voltage measurements show that the dielectric constant of the film increases with the number of deposited layers and the fixed charge and the trapped charge densities have a negative sign.

Efficacy of IPL device combined with intralesional corticosteroid injection for the treatment of keloids and hypertrophic scars with regards to the recovery of skin barrier function: A pilot study.

PubMed

Kim, Dong Young; Park, Hyun Sun; Yoon, Hyun-Sun; Cho, Soyun

2015-10-01

Keloids and hypertrophic scars are prevalent and psychologically distressful dermatologic conditions. Various treatment modalities have been tried but without complete success by any one method. We evaluated the efficacy of a combination of intense pulsed light (IPL) device and intralesional corticosteroid injection for the treatment of keloids and hypertrophic scars with respect to the recovery of skin barrier function. Totally 52 Korean patients were treated by the combined treatment at 4-8-week intervals. Using digital photographs, changes in scar appearance were assessed with modified Vancouver Scar Scale (MVSS), physicians' global assessment (PGA) and patient's satisfaction score. In 12 patients, the stratum corneum (SC) barrier function was assessed by measuring transepidermal water loss (TEWL) and SC capacitance. Most scars demonstrated significant clinical improvement in MVSS, PGA and patient's satisfaction score after the combined therapy. A significant decrease of TEWL and elevation of SC capacitance were also documented after the treatment. The combination therapy (IPL + corticosteroid injection) not only improves the appearance of keloids and hypertrophic scars but also increases the recovery level of skin hydration status in terms of the skin barrier function.

Differential Depletion Capacitance Approximation Analysis Under DC Voltage for Air-Exposed Cu/n-Si Schottky Diodes

NASA Astrophysics Data System (ADS)

Korkut, A.

It is well known that the semiconductor surface is easily oxidized by air-media in time. This work studieds the characterization of Schottky diodes and changes in depletion capacitance, which is caused by air exposure of a group of Cu/n-Si/Al Schottky diodes. First, data for current-voltage and capacitance-voltage were a Ren, and then ideality factor, barrier height, built-in potential (Vbi), donor concentration and Fermi level, interfacial oxide thickness, interface state density were calculated. It is seen that depletion capacitance was calculate; whereafter built-in potential played an important role in Schottky diodes characteristic. Built-in potential directly affects the characteristic of Schottky diodes and a turning point occurs. In case of forward and reverse bias, depletion capacitance versus voltage graphics are matched, but in an opposite direction. In case of forward bias, differential depletion capacitance begins from minus values, it is raised to first Vbi, then reduced to second Vbi under the minus condition. And it sharply gones up to positive apex, then sharply falls down to near zero, but it takes positive values depending on DC voltage. In case of reverse bias, differential depletion capacitance takes to small positive values. In other respects, we see that depletion characteristics change considerably under DC voltage.

Large-scale synthesis of reduced graphene oxides with uniformly coated polyaniline for supercapacitor applications.

PubMed

Salunkhe, Rahul R; Hsu, Shao-Hui; Wu, Kevin C W; Yamauchi, Yusuke

2014-06-01

We report an effective route for the preparation of layered reduced graphene oxide (rGO) with uniformly coated polyaniline (PANI) layers. These nanocomposites are synthesized by chemical oxidative polymerization of aniline monomer in the presence of layered rGO. SEM, TEM, X-ray photoelectron spectroscopy (XPS), FTIR, and Raman spectroscopy analysis results demonstrated that reduced graphene oxide-polyaniline (rGO-PANI) nanocomposites are successfully synthesized. Because of synergistic effects, rGO-PANI nanocomposites prepared by this approach exhibit excellent capacitive performance with a high specific capacitance of 286 F g(-1) and high cycle reversibility of 94 % after 2000 cycles. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabricating solid carbon porous electrodes from powders

DOEpatents

Kaschmitter, James L.; Tran, Tri D.; Feikert, John H.; Mayer, Steven T.

1997-01-01

Fabrication of conductive solid porous carbon electrodes for use in batteries, double layer capacitors, fuel cells, capacitive dionization, and waste treatment. Electrodes fabricated from low surface area (<50 m.sup.2 /gm) graphite and cokes exhibit excellent reversible lithium intercalation characteristics, making them ideal for use as anodes in high voltage lithium insertion (lithium-ion) batteries. Electrodes having a higher surface area, fabricated from powdered carbon blacks, such as carbon aerogel powder, carbon aerogel microspheres, activated carbons, etc. yield high conductivity carbon compositives with excellent double layer capacity, and can be used in double layer capacitors, or for capacitive deionization and/or waste treatment of liquid streams. By adding metallic catalysts to be high surface area carbons, fuel cell electrodes can be produced.

Fabricating solid carbon porous electrodes from powders

DOEpatents

Kaschmitter, J.L.; Tran, T.D.; Feikert, J.H.; Mayer, S.T.

1997-06-10

Fabrication is described for conductive solid porous carbon electrodes for use in batteries, double layer capacitors, fuel cells, capacitive deionization, and waste treatment. Electrodes fabricated from low surface area (<50 m{sup 2}/gm) graphite and cokes exhibit excellent reversible lithium intercalation characteristics, making them ideal for use as anodes in high voltage lithium insertion (lithium-ion) batteries. Electrodes having a higher surface area, fabricated from powdered carbon blacks, such as carbon aerogel powder, carbon aerogel microspheres, activated carbons, etc. yield high conductivity carbon composites with excellent double layer capacity, and can be used in double layer capacitors, or for capacitive deionization and/or waste treatment of liquid streams. By adding metallic catalysts to high surface area carbons, fuel cell electrodes can be produced. 1 fig.

Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors.

PubMed

Lepadatu, A M; Palade, C; Slav, A; Maraloiu, A V; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, V S; Ciurea, M L

2017-04-28

High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO 2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2 /floating gate of single layer of Ge QDs in HfO 2 /tunnel HfO 2 /p-Si wafers. Both Ge and HfO 2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 10 15 m -2 is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO 2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO 2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO 2 NCs boundaries, while another part of the Ge atoms is present inside the HfO 2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO 2 , distanced from the Si substrate by the tunnel oxide layer with a precise thickness.

A novel approach for the improvement of electrostatic behaviour of physically doped TFET using plasma formation and shortening of gate electrode with hetero-gate dielectric

NASA Astrophysics Data System (ADS)

Soni, Deepak; Sharma, Dheeraj; Aslam, Mohd.; Yadav, Shivendra

2018-04-01

This article presents a new device configuration to enhance current drivability and suppress negative conduction (ambipolar conduction) with improved RF characteristics of physically doped TFET. Here, we used a new approach to get excellent electrical characteristics of hetero-dielectric short gate source electrode TFET (HD-SG SE-TFET) by depositing a metal electrode of 5.93 eV work function over the heavily doped source (P+) region. Deposition of metal electrode induces the plasma (thin layer) of holes under the Si/HfO2 interface due to work function difference of metal and semiconductor. Plasma layer of holes is advantageous to increase abruptness as well as decrease the tunneling barrier at source/channel junction for attaining higher tunneling rate of charge carriers (i.e., electrons), which turns into 86.66 times higher ON-state current compared with the conventional physically doped TFET (C-TFET). Along with metal electrode deposition, gate electrode is under-lapped for inducing asymmetrical concentration of charge carriers in the channel region, which is helpful for widening the tunneling barrier width at the drain/channel interface. Consequently, HD-SG SE-TFET shows suppression of ambipolar behavior with reduction in gate-to-drain capacitance which is beneficial for improvement in RF performance. Furthermore, the effectiveness of hetero-gate dielectric concept has been used for improving the RF performance. Furthermore, reliability of C-TFET and proposed structures has been confirmed in term of linearity.

Tunnel barrier schottky

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Rongming; Cao, Yu; Li, Zijian

2018-02-20

A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kovchavtsev, A. P., E-mail: kap@isp.nsc.ru; Tsarenko, A. V.; Guzev, A. A.

The influence of electron energy quantization in a space-charge region on the accumulation capacitance of the InAs-based metal-oxide-semiconductor capacitors (MOSCAPs) has been investigated by modeling and comparison with the experimental data from Au/anodic layer(4-20 nm)/n-InAs(111)A MOSCAPs. The accumulation capacitance for MOSCAPs has been calculated by the solution of Poisson equation with different assumptions and the self-consistent solution of Schrödinger and Poisson equations with quantization taken into account. It was shown that the quantization during the MOSCAPs accumulation capacitance calculations should be taken into consideration for the correct interface states density determination by Terman method and the evaluation of gate dielectric thicknessmore » from capacitance-voltage measurements.« less

Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al{sub 2}O{sub 3} films deposited by remote plasma atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Hyunsoo; Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741; Choi, Hagyoung

2013-11-07

In the present study, we investigated the gas and moisture permeation barrier properties of Al{sub 2}O{sub 3} films deposited on polyethersulfone films (PES) by capacitively coupled plasma (CCP) type Remote Plasma Atomic Layer Deposition (RPALD) at Radio Frequency (RF) plasma powers ranging from 100 W to 400 W in 100 W increments using Trimethylaluminum [TMA, Al(CH{sub 3}){sub 3}] as the Al source and O{sub 2} plasma as the reactant. To study the gas and moisture permeation barrier properties of 100-nm-thick Al{sub 2}O{sub 3} at various plasma powers, the Water Vapor Transmission Rate (WVTR) was measured using an electrical Ca degradationmore » test. WVTR decreased as plasma power increased with WVTR values for 400 W and 100 W of 2.6 × 10{sup −4} gm{sup −2}day{sup −1} and 1.2 × 10{sup −3} gm{sup −2}day{sup −1}, respectively. The trends for life time, Al-O and O-H bond, density, and stoichiometry were similar to that of WVTR with improvement associated with increasing plasma power. Further, among plasma power ranging from 100 W to 400 W, the highest power of 400 W resulted in the best moisture permeation barrier properties. This result was attributed to differences in volume and amount of ion and radical fluxes, to join the ALD process, generated by O{sub 2} plasma as the plasma power changed during ALD process, which was determined using a plasma diagnosis technique called the Floating Harmonic Method (FHM). Plasma diagnosis by FHM revealed an increase in ion flux with increasing plasma power. With respect to the ALD process, our results indicated that higher plasma power generated increased ion and radical flux compared with lower plasma power. Thus, a higher plasma power provides the best gas and moisture permeation barrier properties.« less

Environmental barrier material for organic light emitting device and method of making

DOEpatents

Graff, Gordon L [West Richland, WA; Gross, Mark E [Pasco, WA; Affinito, John D [Kennewick, WA; Shi, Ming-Kun [Richland, WA; Hall, Michael [West Richland, WA; Mast, Eric [Richland, WA

2003-02-18

An encapsulated organic light emitting device. The device includes a first barrier stack comprising at least one first barrier layer and at least one first polymer layer. There is an organic light emitting layer stack adjacent to the first barrier stack. A second barrier stack is adjacent to the organic light emitting layer stack. The second barrier stack has at least one second barrier layer and at least one second polymer layer. A method of making the encapsulated organic light emitting device is also provided.

Electrochemical double-layer capacitors based on functionalized graphene

NASA Astrophysics Data System (ADS)

Pope, Michael Allan

Graphene is a promising electrode material for electrochemical double-layer capacitors (EDLCs) used for energy storage due to its high electrical conductivity and theoretical specific surface area. However, the intrinsic capacitance of graphene is known to be low and governed by the electronic side of the interface. Furthermore, graphene tends to aggregate and stack together when processed into thick electrode films. This significantly lowers the ion-accessible specific surface area (SSA). Maximizing both the SSA and the intrinsic capacitance are the main problems addressed in this thesis in an effort to improve the specific capacitance and energy density of EDLCs. In contrast to pristine graphene, functionalized graphene produced by the thermal exfoliation of graphite oxide contains residual functional groups and lattice defects. To study how these properties affect the double-layer capacitance, a model electrode system capable of measuring the intrinsic electrochemical properties of functionalized graphene was developed. To prevent artifacts and uncertainties related to measurements on porous electrodes, the functionalized graphene sheets (FGSs) were assembled as densely tiled monolayers using a Langmuir-Blodgett technique. In this way, charging can be studied in a well-defined 2D geometry. The possibility of measuring and isolating the intrinsic electrochemical properties of FGS monolayers was first demonstrated by comparing capacitance and redox probe measurements carried out on coatings deposited on passivated gold and single crystal graphite substrates. This monolayer system was then used to follow the double-layer capacitance of the FGS/electrolyte interface as the structure and chemistry of graphene was varied by thermal treatments ranging from 300 °C to 2100 °C. Elemental analysis and Raman spectroscopy were used to determine the resulting chemical and structural transformation upon heat treatment. It was demonstrated that intrinsically defective graphene monolayers can exhibit four-fold higher double-layer capacitance than pristine graphene. High temperature annealing lowered the capacitance until it approached that of pristine graphene. An optimal level of functionalization and lattice disorder is found necessary to retain high double-layer capacitance suggesting that graphene-based materials can be chemically tailored to engineer higher capacitance electrodes. The second half of this thesis focuses on understanding the factors that control the SSA of FGS aggregates when processed into dense electrodes and the development of a new electrode fabrications strategy to improve the ion-accessible surface area of FGS-based electrodes. Using various processing conditions, it was demonstrated that aggregates can exhibit a wide range of SSAs (1 m 2/g to 1750 m2/g) accessible to the adsorption of nitrogen or methylene blue. The effects of capillary forces, van der Waals interactions and aggregation kinetics on the SSA were explored and an aggregation model was proposed to account for these effects. In order to minimize aggregation, a new strategy for preparing graphene-based electrodes for EDLCs was developed. Colloidal gels of graphene oxide in a water-ethanol-ionic liquid solution were assembled into graphene-ionic liquid laminated structures. Our process involves evaporating the solvents water and ethanol yielding a graphene oxide/ionic liquid composite, followed by thermal reduction of the graphene oxide to electrically conducting functionalized graphene. This yields an electrode in which the ionic liquid serves not only as the working electrolyte but also as a spacer to separate the graphene sheets and to increase their electrolyte-accessible surface area. Using this approach, we achieve an outstanding energy density of 17.5 Wh/kg at a gravimetric capacitance of 156 F/g and 3 V operating voltage, due to a high effective density of the active electrode material of 0.46 g/cm2. By increasing the ionic liquid content and degree of thermal reduction, we obtain electrodes that retain >90% of their capacity at a scan rate of 500 mV/s, illustrating that we can tailor the electrodes towards higher power density if energy density is not the primary goal. The ease of manufacturing, achieved by combining the steps of electrode assembly and electrolyte infiltration, makes this bottom-up assembly approach scalable and well suited for combinations of potentially any graphene material with ionic liquid electrolytes.

MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

NASA Astrophysics Data System (ADS)

Jang, Munseon; Yun, Kwang-Seok

2017-12-01

In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

Aqueous solutions of acidic ionic liquids for enhanced stability of polyoxometalate-carbon supercapacitor electrodes

NASA Astrophysics Data System (ADS)

Hu, Chenchen; Zhao, Enbo; Nitta, Naoki; Magasinski, Alexandre; Berdichevsky, Gene; Yushin, Gleb

2016-09-01

Nanocomposites based on polyoxometalates (POMs) nanoconfined in microporous carbons have been synthesized and used as electrodes for supercapacitors. The addition of the pseudocapacitance from highly reversible redox reaction of POMs to the electric double-layer capacitance of carbon lead to an increase in specific capacitance of ∼90% at 1 mV s-1. However, high solubility of POM in traditional aqueous electrolytes leads to rapid capacity fading. Here we demonstrate that the use of aqueous solutions of protic ionic liquids (P-IL) as electrolyte instead of aqueous sulfuric acid solutions offers an opportunity to significantly improve POM cycling stability. Virtually no degradation in capacitance was observed in POM-based positive electrode after 10,000 cycles in an asymmetric capacitor with P-IL aqueous electrolyte. As such, POM-based carbon composites may now present a viable solution for enhancing energy density of electrical double layer capacitors (EDLC) based on pure carbon electrodes.

Capacitively Coupled Arrays of Multiplexed Flexible Silicon Transistors for Long-Term Cardiac Electrophysiology

PubMed Central

Fang, Hui; Yu, Ki Jun; Gloschat, Christopher; Yang, Zijian; Chiang, Chia-Han; Zhao, Jianing; Won, Sang Min; Xu, Siyi; Trumpis, Michael; Zhong, Yiding; Song, Enming; Han, Seung Won; Xue, Yeguang; Xu, Dong; Cauwenberghs, Gert; Kay, Matthew; Huang, Yonggang; Viventi, Jonathan; Efimov, Igor R.; Rogers, John A.

2017-01-01

Advanced capabilities in electrical recording are essential for the treatment of heart-rhythm diseases. The most advanced technologies use flexible integrated electronics; however, the penetration of biological fluids into the underlying electronics and any ensuing electrochemical reactions pose significant safety risks. Here, we show that an ultrathin, leakage-free, biocompatible dielectric layer can completely seal an underlying layer of flexible electronics while allowing for electrophysiological measurements through capacitive coupling between tissue and the electronics, and thus without the need for direct metal contact. The resulting current-leakage levels and operational lifetimes are, respectively, four orders of magnitude smaller and between two and three orders of magnitude longer than those of any other flexible-electronics technology. Systematic electrophysiological studies with normal, paced and arrhythmic conditions in Langendorff hearts highlight the capabilities of the capacitive-coupling approach. Our technology provides a realistic pathway towards the broad applicability of biocompatible, flexible electronic implants. PMID:28804678

Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance Supercapacitors.

PubMed

Ren, Qing-Hua; Zhang, Yan; Lu, Hong-Liang; Wang, Yong-Ping; Liu, Wen-Jun; Ji, Xin-Ming; Devi, Anjana; Jiang, An-Quan; Zhang, David Wei

2018-01-10

A novel hybrid core-shell structure of ZnO nanowires (NWs)/Ni as a pseudocapacitor electrode was successfully fabricated by atomic layer deposition of a nickel shell, and its capacitive performance was systemically investigated. Transmission electron microscopy and X-ray photoelectron spectroscopy results indicated that the NiO was formed at the interface between ZnO and Ni where the Ni was oxidized by ZnO during the ALD of the Ni layer. Electrochemical measurement results revealed that the Ti/ZnO NWs/Ni (1500 cycles) electrode with a 30 nm thick Ni-NiO shell layer had the best supercapacitor properties including ultrahigh specific capacitance (∼2440 F g -1 ), good rate capability (80.5%) under high current charge-discharge conditions, and a relatively better cycling stability (86.7% of the initial value remained after 750 cycles at 10 A g -1 ). These attractive capacitive behaviors are mainly attributed to the unique core-shell structure and the combined effect of ZnO NW arrays as short charge transfer pathways for ion diffusion and electron transfer as well as conductive Ni serving as channel for the fast electron transport to Ti substrate. This high-performance Ti/ZnO NWs/Ni hybrid structure is expected to be one of a promising electrodes for high-performance supercapacitor applications.

Fluoride barriers in Nb/Pb Josephson junctions

NASA Astrophysics Data System (ADS)

Asano, H.; Tanabe, K.; Michikami, O.; Igarashi, M.; Beasley, M. R.

1985-03-01

Josephson tunnel junctions are fabricated using a new class of artificial barriers, metal fluorides (Al fluoride and Zr fluoride). These fluoride barriers are deposited on the surface of a Nb base electrode, which are previously cleaned using a CF4 cleaning process, and covered by a Pb counterelectrode. The junctions with both Al fluoride and Zr fluoride barriers exhibit good tunneling characteristics and have low specific capacitance. In the case of Zr fluoride, it is observed that reasonable resistances are obtained even at thickness greater than 100 A. This phenomenon might be explained by tunneling via localized states in Zr fluoride.

The effects of high-energy uranium ion irradiation on Au/n-GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Gou, J.; Zhang, C. H.; Zhang, L. Q.; Song, Y.; Wang, L. X.; Li, J. J.; Meng, Y. C.; Li, H. X.; Yang, Y. T.; Lu, Z. W.

2014-11-01

The I-V and C-V characteristics of Au/n-GaN Schottky diodes irradiated with 290-MeV 238U32+ ions are presented. The U ions can penetrate the n-type GaN epi-layer with a thickness about 3 μm grown on the c-plane of a sapphire substrate using the MOCVD technique, leaving a purely electronic energy deposition. The Au/n-GaN Schottky diodes were irradiated to successively increasing fluences from 1 × 109 to 5 × 1011 ions cm-2. The measured I-V curves show that the height of the Schottky barrier decreases after irradiation and that the Schottky barrier almost disappears when the ion fluence reaches 5 × 1010 ions cm-2. Meanwhile, the irradiation increases the series resistance. The C-V curves show that the capacitance drops sharply when the ion fluence reaches 5 × 1010 ions cm-2. The dielectric constant also decreases following the irradiation. The changes of the electrical properties are ascribed to the neutralization of the donor-like surface state and the acceptor-like surface state due to the migration of Au atoms at the interface of Au/n-GaN under energetic U ions irradiations.

Electrical hysteresis in p-GaN metal-oxide-semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric

NASA Astrophysics Data System (ADS)

Zhang, Kexiong; Liao, Meiyong; Imura, Masataka; Nabatame, Toshihide; Ohi, Akihiko; Sumiya, Masatomo; Koide, Yasuo; Sang, Liwen

2016-12-01

The electrical hysteresis in current-voltage (I-V) and capacitance-voltage characteristics was observed in an atomic-layer-deposited Al2O3/p-GaN metal-oxide-semiconductor capacitor (PMOSCAP). The absolute minimum leakage currents of the PMOSCAP for forward and backward I-V scans occurred not at 0 V but at -4.4 and +4.4 V, respectively. A negative flat-band voltage shift of 5.5 V was acquired with a capacitance step from +4.4 to +6.1 V during the forward scan. Mg surface accumulation on p-GaN was demonstrated to induce an Mg-Ga-Al-O oxidized layer with a trap density on the order of 1013 cm-2. The electrical hysteresis is attributed to the hole trapping and detrapping process in the traps of the Mg-Ga-Al-O layer via the Poole-Frenkel mechanism.

A user oriented computer program for the analysis of microwave mixers, and a study of the effects of the series inductance and diode capacitance on the performance of some simple mixers

NASA Technical Reports Server (NTRS)

Siegel, P. H.; Kerr, A. R.

1979-01-01

A user oriented computer program for analyzing microwave and millimeter wave mixers with a single Schottky barrier diode of known I-V and C-V characteristics is described. The program first performs a nonlinear analysis to determine the diode conductance and capacitance waveforms produced by the local oscillator. A small signal linear analysis is then used to find the conversion loss, port impedances, and input noise temperature of the mixer. Thermal noise from the series resistance of the diode and shot noise from the periodically pumped current in the diode conductance are considered. The effects of the series inductance and diode capacitance on the performance of some simple mixer circuits using a conventional Schottky diode, a Schottky diode in which there is no capacitance variation, and a Mott diode are studied. It is shown that the parametric effects of the voltage dependent capacitance of a conventional Schottky diode may be either detrimental or beneficial depending on the diode and circuit parameters.

Incorporating a hybrid urease-carbon nanotubes sensitive nanofilm on capacitive field-effect sensors for urea detection.

PubMed

Siqueira, José R; Molinnus, Denise; Beging, Stefan; Schöning, Michael J

2014-06-03

The ideal combination among biomolecules and nanomaterials is the key for reaching biosensing units with high sensitivity. The challenge, however, is to find out a stable and sensitive film architecture that can be incorporated on the sensor's surface. In this paper, we report on the benefits of incorporating a layer-by-layer (LbL) nanofilm of polyamidoamine (PAMAM) dendrimer and carbon nanotubes (CNTs) on capacitive electrolyte-insulator-semiconductor (EIS) field-effect sensors for detecting urea. Three sensor arrangements were studied in order to investigate the adequate film architecture, involving the LbL film with the enzyme urease: (i) urease immobilized directly onto a bare EIS [EIS-urease] sensor; (ii) urease atop the LbL film over the EIS [EIS-(PAMAM/CNT)-urease] sensor; and (iii) urease sandwiched between the LbL film and another CNT layer [EIS-(PAMAM/CNT)-urease-CNT]. The surface morphology of all three urea-based EIS biosensors was investigated by atomic force microscopy (AFM), while the biosensing abilities were studied by means of capacitance-voltage (C/V) and dynamic constant-capacitance (ConCap) measureaments at urea concentrations ranging from 0.1 mM to 100 mM. The EIS-urease and EIS-(PAMAM/CNT)-urease sensors showed similar sensitivity (~18 mV/decade) and a nonregular signal behavior as the urea concentration increased. On the other hand, the EIS-(PAMAM/CNT)-urease-CNT sensor exhibited a superior output signal performance and higher sensitivity of about 33 mV/decade. The presence of the additional CNT layer was decisive to achieve a urea based EIS sensor with enhanced properties. Such sensitive architecture demonstrates that the incorporation of an adequate hybrid enzyme-nanofilm as sensing unit opens new prospects for biosensing applications using the field-effect sensor platform.

Amphiphilic ligand exchange reaction-induced supercapacitor electrodes with high volumetric and scalable areal capacitances

NASA Astrophysics Data System (ADS)

Nam, Donghyeon; Heo, Yeongbeom; Cheong, Sanghyuk; Ko, Yongmin; Cho, Jinhan

2018-05-01

We introduce high-performance supercapacitor electrodes with ternary components prepared from consecutive amphiphilic ligand-exchange-based layer-by-layer (LbL) assembly among amine-functionalized multi-walled carbon nanotubes (NH2-MWCNTs) in alcohol, oleic acid-stabilized Fe3O4 nanoparticles (OA-Fe3O4 NPs) in toluene, and semiconducting polymers (PEDOT:PSS) in water. The periodic insertion of semiconducting polymers within the (OA-Fe3O4 NP/NH2-MWCNT)n multilayer-coated indium tin oxide (ITO) electrode enhanced the volumetric and areal capacitances up to 408 ± 4 F cm-3 and 8.79 ± 0.06 mF cm-2 at 5 mV s-1, respectively, allowing excellent cycling stability (98.8% of the initial capacitance after 5000 cycles) and good rate capability. These values were higher than those of the OA-Fe3O4 NP/NH2-MWCNT multilayered electrode without semiconducting polymer linkers (volumetric capacitance ∼241 ± 4 F cm-3 and areal capacitance ∼1.95 ± 0.03 mF cm-2) at the same scan rate. Furthermore, when the asymmetric supercapacitor cells (ASCs) were prepared using OA-Fe3O4 NP- and OA-MnO NP-based ternary component electrodes, they displayed high volumetric energy (0.36 mW h cm-3) and power densities (820 mW cm-3).

Effects of gas flow rate on the etch characteristics of a low- k sicoh film with an amorphous carbon mask in dual-frequency CF4/C4F8/Ar capacitively-coupled plasmas

NASA Astrophysics Data System (ADS)

Kwon, Bong-Soo; Lee, Hea-Lim; Lee, Nae-Eung; Kim, Chang-Young; Choi, Chi Kyu

2013-01-01

Highly selective nanoscale etching of a low-dielectric constant (low- k) organosilicate (SiCOH) layer using a mask pattern of chemical-vapor-deposited (CVD) amorphous carbon layer (ACL) was carried out in CF4/C4F8/Ar dual-frequency superimposed capacitively-coupled plasmas. The etching characteristics of the SiCOH layers, such as the etch rate, etch selectivity, critical dimension (CD), and line edge roughness (LER) during the plasma etching, were investigated by varying the C4F8 flow rate. The C4F8 gas flow rate primarily was found to control the degree of polymerization and to cause variations in the selectivity, CD and LER of the patterned SiCOH layer. Process windows for ultra-high etch selectivity of the SiCOH layer to the CVD ACL are formed due to the disproportionate degrees of polymerization on the SiCOH and the ACL surfaces.

Capacitance-Based Frequency Adjustment of Micro Piezoelectric Vibration Generator

PubMed Central

Mao, Xinhua; He, Qing; Li, Hong; Chu, Dongliang

2014-01-01

Micro piezoelectric vibration generator has a wide application in the field of microelectronics. Its natural frequency is unchanged after being manufactured. However, resonance cannot occur when the natural frequencies of a piezoelectric generator and the source of vibration frequency are not consistent. Output voltage of the piezoelectric generator will sharply decline. It cannot normally supply power for electronic devices. In order to make the natural frequency of the generator approach the frequency of vibration source, the capacitance FM technology is adopted in this paper. Different capacitance FM schemes are designed by different locations of the adjustment layer. The corresponding capacitance FM models have been established. Characteristic and effect of the capacitance FM have been simulated by the FM model. Experimental results show that the natural frequency of the generator could vary from 46.5 Hz to 42.4 Hz when the bypass capacitance value increases from 0 nF to 30 nF. The natural frequency of a piezoelectric vibration generator could be continuously adjusted by this method. PMID:25133237

Micro-machined thin film hydrogen gas sensor, and method of making and using the same

NASA Technical Reports Server (NTRS)

DiMeo, Jr., Frank (Inventor); Bhandari, Gautam (Inventor)

2001-01-01

A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

Origin of colossal permittivity in BaTiO3 via broadband dielectric spectroscopy

NASA Astrophysics Data System (ADS)

Han, Hyuksu; Voisin, Christophe; Guillemet-Fritsch, Sophie; Dufour, Pascal; Tenailleau, Christophe; Turner, Christopher; Nino, Juan C.

2013-01-01

Barium titanate (BT) ceramics with Ba/Ti ratios of 0.95 and 1.00 were synthesized using spark plasma sintering (SPS) technique. Dielectric spectroscopy (frequency range from 40 Hz to 1 MHz and temperature range from 300 K to 30 K) was performed on those ceramics (SPS BT). SPS BT showed extremely high permittivity up to ˜105, which can be referred to as colossal permittivity, with relatively low dielectric loss of ˜0.05. Data analyses following Debye relaxation and universal dielectric response models indicate that the origin of colossal permittivity in BT ceramics is the result of a hopping polaron within semiconducting grains in combination with interfacial polarization at the insulating grain boundary. Furthermore, the contributions of each polarization mechanism to the colossal permittivity in SPS BT, such as a hopping polarization, internal barrier layer capacitance effect, and electrode effect, were estimated.

Multilayer moisture barrier

DOEpatents

Pankow, Joel W; Jorgensen, Gary J; Terwilliger, Kent M; Glick, Stephen H; Isomaki, Nora; Harkonen, Kari; Turkulainen, Tommy

2015-04-21

A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al.sub.2O.sub.3, AlSiO.sub.x, TiO.sub.2, and an Al.sub.2O.sub.3/TiO.sub.2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiO.sub.xN.sub.y film.

Biredox ionic liquids: new opportunities toward high performance supercapacitors.

PubMed

Bodin, C; Mourad, E; Zigah, D; Le Vot, S; Freunberger, S A; Favier, F; Fontaine, O

2018-01-01

Nowadays commercial supercapacitors are based on purely capacitive storage at the porous carbons that are used for the electrodes. However, the limits that capacitive storage imposes on energy density calls to investigate new materials to improve the capacitance of the device. This new type of electrodes (e.g., RuO 2 , MnO 2 …) involves pseudo-capacitive faradaic redox processes with the solid material. Ion exchange with solid materials is, however, much slower than the adsorption process in capacitive storage and inevitably leads to significant loss of power. Faradaic process in the liquid state, in contrast can be similarly fast as capacitive processes due to the fast ion transport. Designing new devices with liquid like dynamics and improved specific capacitance is challenging. We present a new approach to increase the specific capacitance using biredox ionic liquids, where redox moieties are tethered to the electrolyte ions, allowing high redox concentrations and significant pseudo-capacitive storage in the liquid state. Anions and cations are functionalized with anthraquinone (AQ) and 2,2,6,6-tetramethylpiperidinyl-1-oxyl (TEMPO) moieties, respectively. Glassy carbon, carbon-onion, and commercial activated carbon electrodes that exhibit different double layer structures and thus different diffusion dynamics were used to simultaneously study the electrochemical response of biredox ionic liquids at the positive and negative electrode.

Layer-by-layer self-assembled multilayer films composed of graphene/polyaniline bilayers: high-energy electrode materials for supercapacitors.

PubMed

Sarker, Ashis K; Hong, Jong-Dal

2012-08-28

Multilayer assemblies of uniform ultrathin film electrodes with good electrical conductivity and very large surface areas were prepared for use as electrochemical capacitors. A layer-by-layer self-assembly approach was employed in an effort to improve the processability of highly conducting polyaniline (PANi) and chemically modified graphene. The electrochemical properties of the multilayer film (MF-) electrodes, including the sheet resistance, volumetric capacitance, and charge/discharge ratio, were determined by the morphological modification and the method used to reduce the graphene oxide (GO) to reduced graphene oxide (RGO) in the multilayer films. The PANi and GO concentrations could be modulated to control the morphology of the GO monolayer film in the multilayer assemblies. Optical ellipsometry was used to determine the thickness of the GO film in a single layer (1.32 nm), which agreed well with the literature value (~1.3 nm). Hydroiodic acid (HI), hydrazine, or pyrolysis were tested for the reduction of GO to RGO. HI was found to be the most efficient technique for reducing the GO to RGO in the multilayer assemblies while minimizing damage to the virgin state of the acid-doped PANi. Ultimately, the MF-electrode, which could be optimized by fine-tuning the nanostructure and selecting a suitable reduction method, exhibited an excellent volumetric capacitance, good cycling stability, and a rapid charge/discharge rate, which are required for supercapacitors. A MF-electrode composed of 15 PANi/RGO bilayers yielded a volumetric capacitance of 584 F/cm(3) at a current density of 3.0 A/cm(3). Although this value decreased exponentially as the current density increased, approaching a value of 170 F/cm(3) at 100 A/cm(3), this volumetric capacitance is one of the best yet reported for the other carbon-based materials. The intriguing features of the MF-electrodes composed of PANi/RGO multilayer films offer a new microdimensional design for high energy storage devices for use in small portable electronic devices.

Layer-by-layer assembled multilayer films of exfoliated layered double hydroxide and carboxymethyl-β-cyclodextrin for selective capacitive sensing of acephatemet.

PubMed

Gong, Jingming; Han, Xinmei; Zhu, Xiaolei; Guan, Zhangqiong

2014-11-15

Novel organic-inorganic hybrid ultrathin films were fabricated by alternate assembly of cationic exfoliated Mg-Al-layered double hydroxide (LDH) nanosheets and carboxymethyl-β-cyclodextrin (CMCD) as a polyanion onto a glassy carbon electrode (GCE) via a layer-by-layer (LBL) approach. The multilayer films were then characterized by means of X-ray powder diffraction (XRD), infrared spectroscopy (IR), and scanning electron microscopy (SEM). These films were found to possess a long range stacking order in the normal direction of the substrate with a continuous and uniform morphology. Its electrochemical performance was systematically investigated. Our results demonstrate that such a newly designed (LDH/CMCD)n multilayer film, combining the individual properties of CMCD (a high supramolecule recognition and enrichment capability) together with LDH nanosheets (a rigid inorganic matrix), can be applied to a sensitive, simple, and label-free capacitive detection of acephatemet (AM). Molecular docking calculations further disclose that the selective sensing behavior toward AM may be attributed to the specific binding ability of CMCD to AM. Under the optimized conditions, the capacitive change of AM was proportional to its concentration ranging from 0.001 to 0.10 μg mL(-1) and 0.1 to 0.8 μg mL(-1) with a detection limit 0.6 ng mL(-1) (S/N=3). Toward the goal for practical applications, this simple probe was further evaluated by monitoring AM in real samples. Copyright © 2014 Elsevier B.V. All rights reserved.

Role of ion hydration for the differential capacitance of an electric double layer.

PubMed

Caetano, Daniel L Z; Bossa, Guilherme V; de Oliveira, Vinicius M; Brown, Matthew A; de Carvalho, Sidney J; May, Sylvio

2016-10-12

The influence of soft, hydration-mediated ion-ion and ion-surface interactions on the differential capacitance of an electric double layer is investigated using Monte Carlo simulations and compared to various mean-field models. We focus on a planar electrode surface at physiological concentration of monovalent ions in a uniform dielectric background. Hydration-mediated interactions are modeled on the basis of Yukawa potentials that add to the Coulomb and excluded volume interactions between ions. We present a mean-field model that includes hydration-mediated anion-anion, anion-cation, and cation-cation interactions of arbitrary strengths. In addition, finite ion sizes are accounted for through excluded volume interactions, described either on the basis of the Carnahan-Starling equation of state or using a lattice gas model. Both our Monte Carlo simulations and mean-field approaches predict a characteristic double-peak (the so-called camel shape) of the differential capacitance; its decrease reflects the packing of the counterions near the electrode surface. The presence of hydration-mediated ion-surface repulsion causes a thin charge-depleted region close to the surface, which is reminiscent of a Stern layer. We analyze the interplay between excluded volume and hydration-mediated interactions on the differential capacitance and demonstrate that for small surface charge density our mean-field model based on the Carnahan-Starling equation is able to capture the Monte Carlo simulation results. In contrast, for large surface charge density the mean-field approach based on the lattice gas model is preferable.

Polypyrrole/carbon nanotube nanocomposite enhanced the electrochemical capacitance of flexible graphene film for supercapacitors

NASA Astrophysics Data System (ADS)

Lu, Xiangjun; Dou, Hui; Yuan, Changzhou; Yang, Sudong; Hao, Liang; Zhang, Fang; Shen, Laifa; Zhang, Luojiang; Zhang, Xiaogang

2012-01-01

The flexible electrodes have important potential applications in energy storage of portable electronic devices for their powerful structural properties. In this work, unique flexible films with polypyrrole/carbon nanotube (PPy/CNT) composite homogeneously distributed between graphene (GN) sheets are successfully prepared by flow-assembly of the mixture dispersion of GN and PPy/CNT. In such layered structure, the coaxial PPy/CNT nanocables can not only enlarge the space between GN sheets but also provide pseudo-capacitance to enhance the total capacitance of electrodes. According to the galvanostatic charge/discharge analysis, the mass and volume specific capacitances of GN-PPy/CNT (52 wt% PPy/CNT) are 211 F g-1 and 122 F cm-3 at a current density of 0.2 A g-1, higher than those of the GN film (73 F g-1 and 79 F cm-3) and PPy/CNT (164 F g-1 and 67 F cm-3). Significantly, the GN-PPy/CNT electrode shows excellent cycling stability (5% capacity loss after 5000 cycles) due to the flexible GN layer and the rigid CNT core synergistical releasing the intrinsic differential strain of PPy chains during long-term charge/discharge cycles.

Molecular Insights into the Complex Relationship between Capacitance and Pore Morphology in Nanoporous Carbon-based Supercapacitors.

PubMed

Pak, Alexander J; Hwang, Gyeong S

2016-12-21

Electrochemical double layer capacitors, or supercapacitors, are high-power energy storage devices that consist of large surface area electrodes (filled with electrolyte) to accommodate ion packing in accordance with classical electric double layer (EDL) theory. Nanoporous carbons (NPCs) have recently emerged as a class of electrode materials with the potential to dramatically improve the capacitance of these devices by leveraging ion confinement. However, the molecular mechanisms underlying such enhancements are a clear departure from EDL theory and remain an open question. In this paper, we present the concept of ion reorganization kinetics during charge/discharge cycles, especially within highly confining subnanometer pores, which necessarily dictates the capacitance. Our molecular dynamics voltammetric simulations of ionic liquid immersed in NPC electrodes (of varying pore size distributions) demonstrate that the most efficient ion migration, and thereby largest capacitance, is facilitated by nonuniformity of shape (e.g., from cylindrical to slitlike) along nanopore channels. On the basis of this understanding, we propose that a new structural descriptor, coined as the pore shape factor, can provide a new avenue for materials optimization. These findings also present a framework to understand and evaluate ion migration kinetics within charged nanoporous materials.

Polyaniline-coated freestanding porous carbon nanofibers as efficient hybrid electrodes for supercapacitors

NASA Astrophysics Data System (ADS)

Tran, Chau; Singhal, Richa; Lawrence, Daniel; Kalra, Vibha

2015-10-01

Three-dimensional, free-standing, hybrid supercapacitor electrodes combining polyaniline (PANI) and porous carbon nanofibers (P-CNFs) were fabricated with the aim to integrate the benefits of both electric double layer capacitors (high power, cyclability) and pseudocapacitors (high energy density). A systematic investigation of three different electropolymerization techniques, namely, potentiodynamic, potentiostatic, and galvanostatic, for electrodeposition of PANI on freestanding carbon nanofiber mats was conducted. It was found that the galvanostatic method, where the current density is kept constant and can be easily controlled facilitates conformal and uniform coating of PANI on three-dimensional carbon nanofiber substrates. The electrochemical tests indicated that the PANI-coated P-CNFs exhibit excellent specific capacitance of 366 F g-1 (vs. 140 F g-1 for uncoated porous carbon nanofibers), 140 F cm-3 volumetric capacitance, and up to 2.3 F cm-2 areal capacitance at 100 mV s-1 scan rate. Such excellent performance is attributed to a thin and conformal coating of PANI achieved using the galvanostatic electrodeposition technique, which not only provides pseudocapacitance with high rate capability, but also retains the double-layer capacitance of the underlying P-CNFs.

Environmentally friendly power generator based on moving liquid dielectric and double layer effect

PubMed Central

Huynh, D. H.; Nguyen, T. C.; Nguyen, P. D.; Abeyrathne, C. D.; Hossain, Md. S.; Evans, R.; Skafidas, E.

2016-01-01

An electrostatic power generator converts mechanical energy to electrical energy by utilising the principle of variable capacitance. This change in capacitance is usually achieved by varying the gap or overlap between two parallel metallic plates. This paper proposes a novel electrostatic micro power generator where the change in capacitance is achieved by the movement of an aqueous solution of NaCl. A significant change in capacitance is achieved due to the higher than air dielectric constant of water and the Helmholtz double layer capacitor formed by ion separation at the electrode interfaces. The proposed device has significant advantages over traditional electrostatic devices which include low bias voltage and low mechanical frequency of operation. This is critical if the proposed device is to have utility in harvesting power from the environment. A figure of merit exceeding 10000(108μW)/(mm2HzV2) which is two orders of magnitude greater than previous devices, is demonstrated for a prototype operating at a bias voltage of 1.2 V and a droplet frequency of 6 Hz. Concepts are presented for large scale power harvesting. PMID:27255577

Computational Insights into Materials and Interfaces for Capacitive Energy Storage

PubMed Central

Zhan, Cheng; Lian, Cheng; Zhang, Yu; Thompson, Matthew W.; Xie, Yu; Wu, Jianzhong; Kent, Paul R. C.; Cummings, Peter T.; Wesolowski, David J.

2017-01-01

Supercapacitors such as electric double‐layer capacitors (EDLCs) and pseudocapacitors are becoming increasingly important in the field of electrical energy storage. Theoretical study of energy storage in EDLCs focuses on solving for the electric double‐layer structure in different electrode geometries and electrolyte components, which can be achieved by molecular simulations such as classical molecular dynamics (MD), classical density functional theory (classical DFT), and Monte‐Carlo (MC) methods. In recent years, combining first‐principles and classical simulations to investigate the carbon‐based EDLCs has shed light on the importance of quantum capacitance in graphene‐like 2D systems. More recently, the development of joint density functional theory (JDFT) enables self‐consistent electronic‐structure calculation for an electrode being solvated by an electrolyte. In contrast with the large amount of theoretical and computational effort on EDLCs, theoretical understanding of pseudocapacitance is very limited. In this review, we first introduce popular modeling methods and then focus on several important aspects of EDLCs including nanoconfinement, quantum capacitance, dielectric screening, and novel 2D electrode design; we also briefly touch upon pseudocapactive mechanism in RuO2. We summarize and conclude with an outlook for the future of materials simulation and design for capacitive energy storage. PMID:28725531

THE MEMBRANE CAPACITANCE OF THE SEA URCHIN EGG

PubMed Central

Rothschild, Lord

1957-01-01

1. The surface of the unfertilized sea urchin egg is folded and the folds are reversibly eliminated by exposing the egg to hypotonic sea water. If the plasma membrane is outside the layer of cortical granules, unfolding may explain why the membrane capacitance per unit area decreases (and does not increase) when a sea urchin egg is put into hypotonic sea water. 2. The degree of surface folding markedly increases after fertilization, which provides an explanation for the increase in membrane capacitance per unit area observed after fertilization. 3. The percentage reduction in membrane folding in fertilized eggs after immersion in hypotonic sea water is probably sufficient to explain the decrease in membrane capacitance per unit area observed in these conditions. PMID:13416315

Hybrid nanomaterial of α-Co(OH)2 nanosheets and few-layer graphene as an enhanced electrode material for supercapacitors.

PubMed

Cheng, J P; Liu, L; Ma, K Y; Wang, X; Li, Q Q; Wu, J S; Liu, F

2017-01-15

Supercapacitor with metal hydroxide nanosheets as electrode can have high capacitance. However, the cycling stability and high rate capacity is low due to the low electrical conductivity. Here, the exfoliated α-Co(OH) 2 nanosheets with high capacitance has been assembled on few-layer graphene with high electric conductivity by a facile yet effective and scalable solution method. Exfoliated hydrotalcite-like α-Co(OH) 2 nanosheets and few-layer graphene suspensions were prepared by a simple ultrasonication in formamide and N-methyl-2-pyrrolidone, respectively. Subsequently, a hybrid was made by self-assembly of α-Co(OH) 2 and few-layer graphene when the two dispersions were mixed at room temperature. The hybrid material provided a high specific capacitance of 567.1F/g at 1A/g, while a better rate capability and better stability were achieved compared to that mad of pristine and single exfoliated α-Co(OH) 2 . When the hybrid nanocomposite was used as a positive electrode and activated carbon was applied as negative electrode to assembly an asymmetric capacitor, an energy density of 21.2Wh/kg at a power density of 0.41kW/kg within a potential of 1.65V was delivered. The high electrochemical performance and facile solution-based synthesis method suggested that the hybrid of exfoliated α-Co(OH) 2 /few-layer graphene could be a potential electrode material for electrochemical capacitor. Copyright © 2016 Elsevier Inc. All rights reserved.

Ni foam supported quasi-core-shell structure of ultrathin Ti3C2 nanosheets through electrostatic layer-by-layer self-assembly as high rate-performance electrodes of supercapacitors

NASA Astrophysics Data System (ADS)

Tian, Yapeng; Yang, Chenhui; Que, Wenxiu; He, Yucheng; Liu, Xiaobin; Luo, Yangyang; Yin, Xingtian; Kong, Ling Bing

2017-11-01

Supercapacitor, as an important energy storage device, is a critical component for next generation electric power system, due to its high power density and long cycle life. In this study, a novel electrode material with quasi-core-shell structure, consisting of negatively charged few layer Ti3C2 nanosheets (FL-Ti3C2) and positively charged polyethyleneimine as building blocks, has been prepared by using an electrostatic layer-by-layer self-assembly method, with highly conductive Ni foam to be used as the skeleton. The unique quasi-core-shell structured ultrathin Ti3C2 nanosheets provide an excellent electron channel, ion transport channel and large effective contact area, thus leading to a great improvement in electrochemical performance of the material. The specific capacitance of the binder-free FL-Ti3C2@Ni foam electrodes reaches 370 F g-1 at the scan rate of 2 mV s-1 and a specific capacitance of 117 F g-1 is obtained even at the scan rate of 1000 mV s-1 in the electrolyte of Li2SO4, indicating a high rate performance. In addition, this electrode shows a long-term cyclic stability with a loss of only 13.7% after 10,000 circles. Furthermore, quantitative analysis has been conducted to ensure the relationship between the capacitive contribution and the rate performance of the as-fabricated electrode.

Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors

NASA Astrophysics Data System (ADS)

Hourdakis, E.; Koutsoureli, M.; Papaioannou, G.; Nassiopoulou, A. G.

2018-06-01

Barrier-type anodic alumina thin films are interesting for use in high capacitance density metal-insulator-metal capacitors due to their excellent dielectric properties at small thickness. This thickness is easily controlled by the anodization voltage. In previous papers we studied the main parameters of interest of the Al/barrier-type anodic alumina/Al structure for use in RF applications and showed the great potential of barrier-type anodic alumina in this respect. In this paper, we investigated in detail charging/discharging processes and leakage current of the above dielectric material. Two different sets of metal-insulator-metal capacitors were studied, namely, with the top Al electrode being either e-gun deposited or sputtered. The dielectric constant of the barrier-type anodic alumina was found at 9.3. Low leakage current was observed in all samples studied. Furthermore, depending on the film thickness, field emission following the Fowler-Nordheim mechanism was observed above an applied electric field. Charging of the anodic dielectric was observed, occurring in the bulk of the anodic layer. The stored charge was of the order of few μC/cm2 and the calculated trap density ˜2 × 1018 states/cm3, the most probable origin of charge traps being, in our opinion, positive electrolyte ions trapped in the dielectric during anodization. We do not think that oxygen vacancies play an important role, since their existence would have a more important impact on the leakage current characteristics, such as resistive memory effects or significant changes during annealing, which were not observed. Finally, discharging characteristic times as high as 5 × 109 s were measured.

Influence of the charge double layer on solid oxide fuel cell stack behavior

NASA Astrophysics Data System (ADS)

Whiston, Michael M.; Bilec, Melissa M.; Schaefer, Laura A.

2015-10-01

While the charge double layer effect has traditionally been characterized as a millisecond phenomenon, longer timescales may be possible under certain operating conditions. This study simulates the dynamic response of a previously developed solid oxide fuel cell (SOFC) stack model that incorporates the charge double layer via an equivalent circuit. The model is simulated under step load changes. Baseline conditions are first defined, followed by consideration of minor and major deviations from the baseline case. This study also investigates the behavior of the SOFC stack with a relatively large double layer capacitance value, as well as operation of the SOFC stack under proportional-integral (PI) control. Results indicate that the presence of the charge double layer influences the SOFC stack's settling time significantly under the following conditions: (i) activation and concentration polarizations are significantly increased, or (ii) a large value of the double layer capacitance is assumed. Under normal (baseline) operation, on the other hand, the charge double layer effect diminishes within milliseconds, as expected. It seems reasonable, then, to neglect the charge double layer under normal operation. However, careful consideration should be given to potential variations in operation or material properties that may give rise to longer electrochemical settling times.

Ultrahigh volumetric capacitance and cyclic stability of fluorine and nitrogen co-doped carbon microspheres

NASA Astrophysics Data System (ADS)

Zhou, Junshuang; Lian, Jie; Hou, Li; Zhang, Junchuan; Gou, Huiyang; Xia, Meirong; Zhao, Yufeng; Strobel, Timothy A.; Tao, Lu; Gao, Faming

2015-09-01

Highly porous nanostructures with large surface areas are typically employed for electrical double-layer capacitors to improve gravimetric energy storage capacity; however, high surface area carbon-based electrodes result in poor volumetric capacitance because of the low packing density of porous materials. Here, we demonstrate ultrahigh volumetric capacitance of 521 F cm-3 in aqueous electrolytes for non-porous carbon microsphere electrodes co-doped with fluorine and nitrogen synthesized by low-temperature solvothermal route, rivaling expensive RuO2 or MnO2 pseudo-capacitors. The new electrodes also exhibit excellent cyclic stability without capacitance loss after 10,000 cycles in both acidic and basic electrolytes at a high charge current of 5 A g-1. This work provides a new approach for designing high-performance electrodes with exceptional volumetric capacitance with high mass loadings and charge rates for long-lived electrochemical energy storage systems.

Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition

DOEpatents

Jiang, Ying-Bing [Albuquerque, NM; Cecchi, Joseph L [Albuquerque, NM; Brinker, C Jeffrey [Albuquerque, NM

2011-05-24

Barrier layers and methods for forming barrier layers on a porous layer are provided. The methods can include chemically adsorbing a plurality of first molecules on a surface of the porous layer in a chamber and forming a first layer of the first molecules on the surface of the porous layer. A plasma can then be used to react a plurality of second molecules with the first layer of first molecules to form a first layer of a barrier layer. The barrier layers can seal the pores of the porous material, function as a diffusion barrier, be conformal, and/or have a negligible impact on the overall ILD k value of the porous material.

A copper-based layered coordination polymer: synthesis, magnetic properties and electrochemical performance in supercapacitors.

PubMed

Liu, Qi; Liu, Xiuxiu; Shi, Changdong; Zhang, Yanpeng; Feng, Xuejun; Cheng, Mei-Ling; Su, Seng; Gu, Jiande

2015-11-28

A copper-based layered coordination polymer ([Cu(hmt)(tfbdc)(H2O)]; hmt = hexamethylenetetramine, tfbdc = 2,3,5,6-tetrafluoroterephthalate; Cu-LCP) has been synthesized, and it has been structurally and magnetically characterized. The Cu-LCP shows ferromagnetic interactions between the adjacent copper(II) ions. Density functional theory calculations on the special model of Cu-LCP support the occurrence of ferromagnetic interactions. As an electrode material for supercapacitors, Cu-LCP exhibits a high specific capacitance of 1274 F g(-1) at a current density of 1 A g(-1) in 1 M LiOH electrolyte, and the capacitance retention is about 88% after 2000 cycles.

Three-dimensionally arrayed and mutually connected 1.2-nm nanopores for high-performance electric double layer capacitor.

PubMed

Itoi, Hiroyuki; Nishihara, Hirotomo; Kogure, Taichi; Kyotani, Takashi

2011-02-09

Zeolite-templated carbon is a promising candidate as an electrode material for constructing an electric double layer capacitor with both high-power and high-energy densities, due to its three-dimensionally arrayed and mutually connected 1.2-nm nanopores. This carbon exhibits both very high gravimetric (140-190 F g(-1)) and volumetric (75-83 F cm(-3)) capacitances in an organic electrolyte solution. Moreover, such a high capacitance can be well retained even at a very high current up to 20 A g(-1). This extraordinary high performance is attributed to the unique pore structure.

Magnetoimpedance behavior and its equivalent circuit analysis of Co/Cu/Co/Py pseudo-spin-valve with a nano-oxide layer

NASA Astrophysics Data System (ADS)

Chien, Wei-Chih; Yao, Yeong-Der; Wu, Jiann-Kuo; Lo, Chi-Kuen; Hung, Ruei-Feng; Lan, M. D.; Lin, Pang

2009-02-01

Magnetoimpedance behaviors and thermal effects of a Co/Cu/Co/Py pseudo-spin-valve (PSV) with a nano-oxide layer (NOL) were studied. The PSV can be regarded as a combination of resistances, inductances, and capacitances. In addition, equivalent circuit theory can be used to analyze the ac behavior of this system. The imaginary part of the magnetoimpedance (magnetoreactance) ratio is more than 1700% at the resonance frequency (fr)=476 kHz at room temperature (RT). The dc magnetoresistance (MR) ratio decreases as the annealing temperature increases because the NOL is formed at the interface between the spacer and the magnetic layer. The NOL deteriorates the differential spin scattering and reduces the dc MR ratio. Impedance spectroscopy was utilized to analyze the capacitance effect from NOL after annealing. The effective capacitance of the PSV was 21.8 nF at RT and changed to 11.8 nF after annealing at 200 °C. The useful equivalent capacitor circuit not only is a nondestructive measurement technology but can also explain the experimental results and prove the formation of the NOL.

Early Stage Anodic Instability of Glassy Carbon Electrodes in Propylene Carbonate Solvent Containing Lithium Hexafluorophosphate.

PubMed

Carino, Emily V; Newman, Daniel J; Connell, Justin G; Kim, Chaerin; Brushett, Fikile R

2017-10-31

Irreversible changes to the morphology of glassy carbon (GC) electrodes at potentials between 3.5 and 4.5 V vs Li/Li + in propylene carbonate (PC) solvent containing lithium hexafluorophosphate (LiPF 6 ) are reported. Analysis of cyclic voltammetry (CV) experiments in the range of 3.0 to 6.0 V shows that the capacitance of the electrochemical double-layer increased irreversibly beginning at potentials as low as 3.5 V. These changes resulted from nonfaradaic interactions, and were not due to oxidative electrochemical decomposition of the electrode and electrolyte, anion intercalation, nor caused by the presence of water, a common impurity in organic electrolyte solutions. Atomic force microscopy (AFM) images revealed that increasing the potential of a bare GC surface from 3.0 to 4.5 V resulted in a 6× increase in roughness, in good agreement with the changes in double-layer capacitance. Treating the GC surface via exposure to trichloromethylsilane vapors resulted in a stable double-layer capacitance between 3.0 and 4.5 V, and this treatment also correlated with less roughening. These results inform future efforts aimed at controlling surface composition and morphology of carbon electrodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carino, Emily V.; Newman, Daniel J.; Connell, Justin G.

In this paper, irreversible changes to the morphology of glassy carbon (GC) electrodes at potentials between 3.5 and 4.5 V vs Li/Li + in propylene carbonate (PC) solvent containing lithium hexafluorophosphate (LiPF 6) are reported. Analysis of cyclic voltammetry (CV) experiments in the range of 3.0 to 6.0 V shows that the capacitance of the electrochemical double -layer increased irreversibly beginning at potentials as low as 3.5 V. These changes resulted from nonfaradaic interactions, and were not due to oxidative electrochemical decomposition of the electrode and electrolyte, anion intercalation, nor caused by the presence of water, a common impurity inmore » organic electrolyte solutions. Atomic force microscopy (AFM) images revealed that increasing the potential of a bare GC surface from 3.0 to 4.5 V resulted in a 6X increase in roughness, in good agreement with the changes in double -layer capacitance. Treating the GC surface via exposure to trichloromethylsilane vapors resulted in a stable double -layer capacitance between 3.0 and 4.5 V, and this treatment also correlated with less roughening. Lastly, these results inform future efforts aimed at controlling surface composition and morphology of carbon electrodes.« less

Multi-layer light-weight protective coating and method for application

NASA Technical Reports Server (NTRS)

Wiedemann, Karl E. (Inventor); Clark, Ronald K. (Inventor); Taylor, Patrick J. (Inventor)

1992-01-01

A thin, light-weight, multi-layer coating is provided for protecting metals and their alloys from environmental attack at high temperatures. A reaction barrier is applied to the metal substrate and a diffusion barrier is then applied to the reaction barrier. A sealant layer may also be applied to the diffusion barrier if desired. The reaction barrier is either non-reactive or passivating with respect to the metal substrate and the diffusion barrier. The diffusion barrier is either non-reactive or passivating with respect to the reaction barrier and the sealant layer. The sealant layer is immiscible with the diffusion barrier and has a softening point below the expected use temperature of the metal.

Variational formulation of open-ended coaxial line in contact with layered biological medium.

PubMed

Alanen, E; Lahtinen, T; Nuutinen, J

1998-10-01

An open-ended coaxial probe designed to measure layered biological media is analyzed with a new method. The probe is considered as an electrostatic circuit element whose capacitance is solved using a stationary functional. The fundamental transverse electric and magnetic field (TEM)-mode and the series of evanescent wavemodes in the coaxial cable are used as basis functions. The field outside the probe is solved using a Hankel transform. The capacitance is calculated for homogeneous materials and two-layer structures and the results are compared with values measured with a phantom model. The method can be easily extended for structures with an arbitrary number of layers. A practical approximation for two-layer cases, originally developed to take into account the effect of subcutaneous fat in skin measurements, is presented and its validity for different combinations of dielectric constants and the thickness of the first layer is demonstrated. The static approximation limits the frequency range, but it covers biological measurements up to 500 MHz. The developed method is accurate and easy to adopt in practice.

Complete passive vibration suppression using multi-layered piezoelectric element, inductor, and resistor

NASA Astrophysics Data System (ADS)

Yamada, Keisuke

2017-01-01

This paper describes passive technique for suppressing vibration in flexible structures using a multi-layered piezoelectric element, an inductor, and a resistor. The objective of using a multi-layered piezoelectric element is to increase its capacitance. A piezoelectric element with a large capacitance value does not require an active electrical circuit to simulate an inductor with a large inductance value. The effect of multi-layering of piezoelectric elements was theoretically analyzed through an equivalent transformation of a multi-layered piezoelectric element into a single-layered piezoelectric element. The governing equations were derived using this equivalent transformation. The effect of the resistances of the inductor and piezoelectric elements were considered because the sum of these resistances may exceed the optimum resistance. The performance of the passive vibration suppression using an LR circuit was compared to that of the method where a resistive circuit is used assuming that the sum of the resistances of the inductor and piezoelectric elements exceeds the optimum resistance. The effectiveness of the proposed method and theoretical analysis was verified through simulations and experiments.

Multilayer article having stabilized zirconia outer layer and chemical barrier layer

NASA Technical Reports Server (NTRS)

Bansal, Narottam P. (Inventor); Lee, Kang N. (Inventor)

2004-01-01

A multilayer article includes a substrate that includes at least one of a ceramic compound and a Si-containing metal alloy. An outer layer includes stabilized zirconia. Intermediate layers are located between the outer layer and the substrate and include a mullite-containing layer and a chemical barrier layer. The mullite-containing layer includes 1) mullite or 2) mullite and an alkaline earth metal aluminosilicate. The chemical barrier layer is located between the mullite-containing layer and the outer layer. The chemical barrier layer includes at least one of mullite, hafnia, hafnium silicate and rare earth silicate (e.g., at least one of RE.sub.2 SiO.sub.5 and RE.sub.2 Si.sub.2 O.sub.7 where RE is Sc or Yb). The multilayer article is characterized by the combination of the chemical barrier layer and by its lack of a layer consisting essentially of barium strontium aluminosilicate between the mullite-containing layer and the chemical barrier layer. Such a barium strontium aluminosilicate layer may undesirably lead to the formation of a low melting glass or unnecessarily increase the layer thickness with concomitant reduced durability of the multilayer article. In particular, the chemical barrier layer may include at least one of hafnia, hafnium silicate and rare earth silicate.

Direct current dielectric barrier assistant discharge to get homogeneous plasma in capacitive coupled discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Yinchang, E-mail: ycdu@mail.ustc.edu.cn; Max-Planck Institute for Extraterrestrial Physics, D-85748 Garching; Li, Yangfang

In this paper, we propose a method to get more homogeneous plasma in the geometrically asymmetric capacitive coupled plasma (CCP) discharge. The dielectric barrier discharge (DBD) is used for the auxiliary discharge system to improve the homogeneity of the geometrically asymmetric CCP discharge. The single Langmuir probe measurement shows that the DBD can increase the electron density in the low density volume, where the DBD electrodes are mounted, when the pressure is higher than 5 Pa. By this manner, we are able to improve the homogeneity of the plasma production and increase the overall density in the target volume. At last,more » the finite element simulation results show that the DC bias, applied to the DBD electrodes, can increase the homogeneity of the electron density in the CCP discharge. The simulation results show a good agreement with the experiment results.« less

Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction

PubMed Central

Marigó, Eloi; Sansa, Marc; Pérez-Murano, Francesc; Uranga, Arantxa; Barniol, Núria

2015-01-01

A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology. PMID:26184222

Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction.

PubMed

Marigó, Eloi; Sansa, Marc; Pérez-Murano, Francesc; Uranga, Arantxa; Barniol, Núria

2015-07-14

A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

Highly Uniform Atomic Layer-Deposited MoS2@3D-Ni-Foam: A Novel Approach To Prepare an Electrode for Supercapacitors.

PubMed

Nandi, Dip K; Sahoo, Sumanta; Sinha, Soumyadeep; Yeo, Seungmin; Kim, Hyungjun; Bulakhe, Ravindra N; Heo, Jaeyeong; Shim, Jae-Jin; Kim, Soo-Hyun

2017-11-22

This article takes an effort to establish the potential of atomic layer deposition (ALD) technique toward the field of supercapacitors by preparing molybdenum disulfide (MoS 2 ) as its electrode. While molybdenum hexacarbonyl [Mo(CO) 6 ] serves as a novel precursor toward the low-temperature synthesis of ALD-grown MoS 2 , H 2 S plasma helps to deposit its polycrystalline phase at 200 °C. Several ex situ characterizations such as X-ray diffractometry (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and so forth are performed in detail to study the as-grown MoS 2 film on a Si/SiO 2 substrate. While stoichiometric MoS 2 with very negligible amount of C and O impurities was evident from XPS, the XRD and high-resolution transmission electron microscopy analyses confirmed the (002)-oriented polycrystalline h-MoS 2 phase of the as-grown film. A comparative study of ALD-grown MoS 2 as a supercapacitor electrode on 2-dimensional stainless steel and on 3-dimensional (3D) Ni-foam substrates clearly reflects the advantage and the potential of ALD for growing a uniform and conformal electrode material on a 3D-scaffold layer. Cyclic voltammetry measurements showed both double-layer capacitance and capacitance contributed by the faradic reaction at the MoS 2 electrode surface. The optimum number of ALD cycles was also found out for achieving maximum capacitance for such a MoS 2 @3D-Ni-foam electrode. A record high areal capacitance of 3400 mF/cm 2 was achieved for MoS 2 @3D-Ni-foam grown by 400 ALD cycles at a current density of 3 mA/cm 2 . Moreover, the ALD-grown MoS 2 @3D-Ni-foam composite also retains high areal capacitance, even up to a high current density of 50 mA/cm 2 . Finally, this directly grown MoS 2 electrode on 3D-Ni-foam by ALD shows high cyclic stability (>80%) over 4500 charge-discharge cycles which must invoke the research community to further explore the potential of ALD for such applications.

Electrical and dielectric properties of (barium, strontium) titanium trioxide thin film capacitors for ultra-high density dynamic random access memories

NASA Astrophysics Data System (ADS)

Basceri, Cem

The electrical and dielectric properties of fiber-textured, MOCVD (Basb{0.7}Srsb{0.3})TiOsb3 (BST) thin film capacitors appropriate for ultra-large scale integration (ULSI) dynamic random access memory (DRAM) applications have been analyzed. Dielectric relaxation, leakage, resistance degradation, and dielectric response phenomena, within a comprehensive matrix of external and material parameters, have been investigated. The phenomenology of the dielectric response of our BST films has been shown to be well-described by Curie-von Schweidler behavior, although the microscopic origin of this behavior has not been presently agreed upon. The time-dependent polarization behavior has been linked to the dispersion in permittivity with respect to frequency. The leakage current through our BST films has been found to be primarily limited by interfacial Schottky barriers whose properties depend on the electrode material, interface microstructure, and deposition conditions. Its temperature and voltage dependence have been interpreted via a thermionic emission model. Analysis in terms of Schottky-barrier limited current flow gave acceptable values for the cathode barrier height. The results have indicated that our BST films, appropriate for DRAM applications, do not possess depletion layers at the film-electrode interfaces. Instead, they must be considered as depleted of charge carriers across their entire thickness. Resistance degradation has been found to be thermally activated and voltage/field dependent. The results have indicated that there is a film thickness effect, which manifests itself as a decrease in the activation energy with respect to temperature for thicker films. A significant stoichiometry effect on the measured resistance degradation lifetimes has been observed. The analyses of the leakage and capacitance-voltage behaviors for the degraded samples have indicated that a demixing of oxygen vacancies occurs during resistance degradation, which causes the Schottky barrier height to decrease, in agreement with the observed relative shift of the peak capacitance as a function of voltage. For all the film thicknesses and compositions studied, extrapolated resistance degradation lifetimes of our BST films, which were obtained by using an appropriate form, are well above the current benchmark of 10 years at the DRAM operating conditions of 1.6 V and 85sp°C. Above the bulk Curie point (˜300 K), the phenomenological approach, i.e., Landau-Ginzburg-Devonshire (LGD) theory, has been demonstrated to account very well for the observed C-V behavior in our BST films. Furthermore, temperature dependent measurements gave evidence that, as expected, the form of the dielectric behavior changes near the bulk Curie point, but that the phase transition appears for some reason to be frustrated. Film thickness has been established to impact primarily the zero-bias permittivity through a thickness dependence of the first order coefficient of the LGD power series. Our analysis does indicate that if it results from a series-connected interfacial layer, that layer must be a nonlinear dielectric, as must the bulk of the film. The dielectric constant has been found to be composition dependent, reaching its highest values for compositions near the stoichiometric values. Furthermore, film stoichiometry has been established to strongly effect both the first order and third order coefficients of the LGD power series.

Few layer graphene wrapped mixed phase TiO2 nanofiber as a potential electrode material for high performance supercapacitor applications

NASA Astrophysics Data System (ADS)

Thirugnanam, Lavanya; Sundara, Ramaprabhu

2018-06-01

A combination of favorable composition and optimized anatase/rutile mixed-phase TiO2 (MPTNF)/Hydrogen exfoliated graphene (HEG) composite nanofibers (MPTNF/HEG) and anatase/rutile mixed-phase TiO2/reduced graphene oxide (rGO) composite nanofibers (MPTNF/rGO) have been reported to enhance the electrochemical properties for supercapacitor applications. These composite nanofibers have been synthesized by an efficient route of electrospinning together with the help of easy chemical methods. Both the composites exhibit good charge storage capability with enhanced pseudocapacitance and electric double-layer capacitance (EDLC) as confirmed by cyclic voltammetry studies. MPTNF/HEG composite showed maximum specific capacitance of 210.5 F/g at the current density of 1 A/g, which was mainly due to its availability of the more active sites for ions adsorption on a few layers of graphene wrapped TiO2 nanofiber surface. The synergistic effect of anatase/rutile mixed phase with one dimensional nanostructure and the electronic interaction between TiO2 and few layer graphene provided the subsequent improvement of ion adsorption capacity. Also exhibit excellent electrochemical performance to improve the capacitive properties of TiO2 electrode materials which is required for the development of flexible electrodes in energy storage devices and open up new opportunities for high performance supercapacitors.

On the Relationship Between Schottky Barrier Capacitance and Mixer Performance at Cryogenic Temperatures

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.

1996-01-01

The flat-band voltage is the Schottky junction voltage required to shrink the depletion width to zero. At cryogenic temperatures, mixer diodes are generally biased and/or pumped beyond the flat-band condition to minimize conversion loss and noise figure. This occurs despite the presumed sharp increase in junction capacitance near flat-band, which should instead limit mixer performance. Past moderate forward bias, the diode C-V relationship is difficult to measure. A simple analytic expression for C(V) is usually used to model and predict mixer performance. This letter provides experimental data on C(V) at 77 K based on a microwave measurement and modeling technique. Data is also provided on the conversion loss of a singly balanced mixer optimized for 77 K operation. The connection between junction capacitance, flat-band potential, and conversion loss is examined. It is shown that the analytic expression greatly overestimates the junction capacitance that occurs as flat-band is approached.

Photo-induced electronic properties in single quantum well system: effect of excitonic lifetime

NASA Astrophysics Data System (ADS)

Patwari, Jayita; Ghadi, Hemant; Sardar, Samim; Singhal, Jashan; Tongbram, Binita; Shyamal, Sanjib; Bhattacharya, Chinmoy; Chakrabarti, Subhananda; Pal, Samir Kumar

2017-01-01

In the present study, we have established a correlation between the photo-induced electronic phenomena and excited state lifetime of the photo generated carriers in double barrier Al0.3Ga0.7As\\GaAs quantum well (QW) structures. The excited state lifetime was measured experimentally by picosecond time resolved photoluminescence spectroscopy for two samples with different well widths (5.3 nm and 16.5 nm). The faster nonradiative decay time of the narrower well can be attributed to the facile escape of electrons from well to barrier due to lower associated energy compared to that of the thicker well which resembles the simulated results of the energy level distribution. The proposed mechanism of carrier escape is further proven from the higher value of unconventional excitonic capacitance value in the thicker well, measured by impedance spectroscopy. The dependence of photo-induced capacitance on well thickness is explained by the lifetime of the excited carriers in this study. Dependence of the photo-generated capacitance (C) on externally applied bias voltage (V) was also studied to quantitatively establish a proportional relation between the carrier holding capacity of the well and the excitonic lifetime. The higher accumulation of charge and lower ground state energy of the thicker well is evident from the higher tunnelling current found for the same in the photocurrent (I) versus voltage (V) measurement. Thus the escape of electrons from the well to barrier is the key factor affecting the photo generated charge accumulation and its holding capacity which in turn influences the device performances.

Effect of doping on the forward current-transport mechanisms in a metal-insulator-semiconductor contact to INP:ZN grown by metal organic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Cova, P.; Singh, A.; Medina, A.; Masut, R. A.

1998-04-01

A detailed study of the effect of doping density on current transport was undertaken in Au metal-insulator-semiconductor (MIS) contacts fabricated on Zn-doped InP layers grown by metal organic vapor phase epitaxy. A recently developed method was used for the simultaneous analysis of the current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics in an epitaxial MIS diode which brings out the contributions of different current-transport mechanisms to the total current. I- V and high-frequency C- V measurements were performed on two MIS diodes at different temperatures in the range 220-395 K. The barrier height at zero bias of Au/InP:Zn MIS diodes, φ0 (1.06 V±10%), was independent both of the Zn-doping density and of the surface preparation. The interface state density distribution Nss as well as the thickness of the oxide layer (2.2±15% nm) unintentionally grown before Au deposition were independent of the Zn-doping concentration in the range 10 16< NA<10 17 cm -3; not so the effective potential barrier χ of the insulator layer and the density of the mid-gap traps. χ was much lower for the highly-doped sample. Our results indicate that at high temperatures, independent of the Zn-doping concentration, the interfacial layer-thermionic (ITE) and interfacial layer-diffusion (ID) mechanisms compete with each other to control the current transport. At intermediate temperatures, however, ITE and ID will no longer be the only dominant mechanisms in the MIS diode fabricated on the highly-doped sample. In this case, the assumption of a generation-recombination current permits a better fit to the experimental data. Analysis of the data suggests that the generation-recombination current, observed only in the highly-doped sample, is associated with an increase in the Zn-doping density. From the forward I- V data for this diode we obtained the energy level (0.60 eV from the conduction band) for the most effective recombination centers.

Temperature dependence of current-and capacitance-voltage characteristics of an Au/4H-SiC Schottky diode

NASA Astrophysics Data System (ADS)

Gülnahar, Murat

2014-12-01

In this study, the current-voltage (I-V) and capacitance-voltage (C-V) measurements of an Au/4H-SiC Schottky diode are characterized as a function of the temperature in 50-300 K temperature range. The experimental parameters such as ideality factor and apparent barrier height presents to be strongly temperature dependent, that is, the ideality factor increases and the apparent barrier height decreases with decreasing temperature, whereas the barrier height values increase with the temperature for C-V data. Likewise, the Richardson plot deviates at low temperatures. These anomaly behaviors observed for Au/4H-SiC are attributed to Schottky barrier inhomogeneities. The barrier anomaly which relates to interface of Au/4H-SiC is also confirmed by the C-V measurements versus the frequency measured in 300 K and it is interpreted by both Tung's lateral inhomogeneity model and multi-Gaussian distribution approach. The values of the weighting coefficients, standard deviations and mean barrier height are calculated for each distribution region of Au/4H-SiC using the multi-Gaussian distribution approach. In addition, the total effective area of the patches NAe is obtained at separate temperatures and as a result, it is expressed that the low barrier regions influence meaningfully to the current transport at the junction. The homogeneous barrier height value is calculated from the correlation between the ideality factor and barrier height and it is noted that the values of standard deviation from ideality factor versus q/3kT curve are in close agreement with the values obtained from the barrier height versus q/2kT variation. As a result, it can be concluded that the temperature dependent electrical characteristics of Au/4H-SiC can be successfully commented on the basis of the thermionic emission theory with both models.

Multilayer thermal barrier coating systems

DOEpatents

Vance, Steven J.; Goedjen, John G.; Sabol, Stephen M.; Sloan, Kelly M.

2000-01-01

The present invention generally describes multilayer thermal barrier coating systems and methods of making the multilayer thermal barrier coating systems. The thermal barrier coating systems comprise a first ceramic layer, a second ceramic layer, a thermally grown oxide layer, a metallic bond coating layer and a substrate. The thermal barrier coating systems have improved high temperature thermal and chemical stability for use in gas turbine applications.

Facile preparation, optical and electrochemical properties of layer-by-layer V2O5 quadrate structures

NASA Astrophysics Data System (ADS)

Zhang, Yifu; Zheng, Jiqi; Wang, Qiushi; Hu, Tao; Tian, Fuping; Meng, Changgong

2017-03-01

Layer-by-layer V2O5 structures self-assembly by quadrate sheets like "multilayer cake" were successfully synthesized using NH4VO3 as the vanadium sources by a facile hydrothermal route and combination of the calcination. The structure and composition were characterized by field emission scanning electron microscopy, energy-dispersive X-ray spectrometer, X-ray powder diffraction, Raman and Fourier transform infrared spectroscopy. The optical properties of the as-obtained V2O5 layer-by-layer structures were investigated by the Ultraviolet-visible spectroscopy and photoluminescence spectrum. The electrochemical properties of the as-obtained V2O5 layer-by-layer structures as electrodes in supercapacitor device were measured by cyclic voltammetry (CV) and galvanostatic charge-discharge (GCD) both in the aqueous and organic electrolyte. The specific capacitance is 347 F g-1 at 1 A g-1 in organic electrolyte, which is improved by 46% compared with 238 F g-1 in aqueous electrolyte. During the cycle performance, the specific capacitances of V2O5 layer-by-layer structures after 100 cycles are 30% and 82% of the initial discharge capacity in the aqueous and organic electrolyte, respectively, indicating the cycle performance is significantly improved in organic electrolyte. Our results turn out that layer-by-layer V2O5 structures are an ideal material for supercapacitor electrode in the present work.

A Study on Ohmic Contact to Dry-Etched p-GaN

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Ao, Jin-Ping; Okada, Masaya; Ohno, Yasuo

Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl4/Cl2-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000°C 30s) was tried on the SiCl4/Cl2-etched p-GaN and Ohmic contact was obtained.

Solid State Ultracapacitor

NASA Technical Reports Server (NTRS)

Rolin, Terry D.

2015-01-01

NASA analyzes, tests, packages, and fabricates electrical, electronic, and electromechanical (EEE) parts used in space vehicles. One area that NASA wishes to advance is energy storage and delivery. Currently, space vehicles use rechargeable batteries that utilize silver zinc or lithium ion electrochemical processes. These current state-of-the-art rechargeable batteries cannot be rapidly charged, contain harmful chemicals, and suffer from early wear-out mechanisms. A solid state ultracapacitor is an EEE part that offers significant advantages over current electrochemical and electrolytic devices. The objective of this research is to develop an internal barrier layer ultracapacitor (IBLC) using novel dielectric materials as a battery replacement with a focus on these advantages: longer life, lower mass-toweight ratio, rapid charging, on-demand pulse power, improved on-pad standby time without maintenance, and environmental friendliness. The approach is unique in two areas. A deposition technique is used that has been shown to produce a more uniformly coated nanoparticle than sol-gel, which has resulted in colossal permittivities. These particles are then distributed in an ink formulation developed at NASA Marshall Space Flight Center (MSFC) and deposited utilizing a 3D aerosol jet technique. This additive manufacturing technique controls layer thickness, resulting in extremely large capacitance and energy density.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lutzer, B.; Simsek, S.; Zimmermann, C.

In order to improve the electrical behaviour of metal-insulator-metal capacitors with ZrO{sub 2} insulator grown by Atomic Layer Deposition, the influence of the insertion of interfacial Cr layers between Pt electrodes and the zirconia is investigated. An improvement of the α-voltage coefficient of capacitance as low as 567 ppm/V{sup 2} is achieved for a single layer of Cr while maintaining a high capacitance density of 10.7 fF/μm{sup 2} and a leakage current of less than 1.2 × 10{sup −8} A/cm{sup 2} at +1 V. The role of the interface is discussed by means of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy showing themore » formation of Zr stabilized chromia oxide phase with a dielectric constant of 16.« less

Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

ERIC Educational Resources Information Center

Jones, Kenneth

1979-01-01

Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

Redundancy Analysis of Capacitance Data of a Coplanar Electrode Array for Fast and Stable Imaging Processing

PubMed Central

Wen, Yintang; Zhang, Zhenda; Zhang, Yuyan; Sun, Dongtao

2017-01-01

A coplanar electrode array sensor is established for the imaging of composite-material adhesive-layer defect detection. The sensor is based on the capacitive edge effect, which leads to capacitance data being considerably weak and susceptible to environmental noise. The inverse problem of coplanar array electrical capacitance tomography (C-ECT) is ill-conditioning, in which a small error of capacitance data can seriously affect the quality of reconstructed images. In order to achieve a stable image reconstruction process, a redundancy analysis method for capacitance data is proposed. The proposed method is based on contribution rate and anti-interference capability. According to the redundancy analysis, the capacitance data are divided into valid and invalid data. When the image is reconstructed by valid data, the sensitivity matrix needs to be changed accordingly. In order to evaluate the effectiveness of the sensitivity map, singular value decomposition (SVD) is used. Finally, the two-dimensional (2D) and three-dimensional (3D) images are reconstructed by the Tikhonov regularization method. Through comparison of the reconstructed images of raw capacitance data, the stability of the image reconstruction process can be improved, and the quality of reconstructed images is not degraded. As a result, much invalid data are not collected, and the data acquisition time can also be reduced. PMID:29295537

Curvature Effect on the Capacitance of Electric Double Layers at Ionic Liquid/Onion-Like Carbon Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Guang; Jiang, Deen; Cummings, Peter T

Recent experiments have revealed that onion-like carbons (OLCs) offer high energy density and charging/discharging rates when used as the electrodes in supercapacitors. To understand the physical origin of this phenomenon, molecular dynamics simulations were performed for a room-temperature ionic liquid near idealized spherical OLCs with radii ranging from 0.356 to 1.223 nm. We find that the surface charge density increases almost linearly with the potential applied on electric double layers (EDLs) near OLCs. This leads to a nearly flat shape of the differential capacitance versus the potential, unlike the bell or camel shape observed on planar electrodes. Moreover, our simulationsmore » reveal that the capacitance of EDLs on OLCs increases with the curvature or as the OLC size decreases, in agreement with experimental observations. The curvature effect is explained by dominance of charge overscreening over a wide potential range and increased ion density per unit area of electrode surface as the OLC becomes smaller.« less

Exceptionally High Electric Double Layer Capacitances of Oligomeric Ionic Liquids.

PubMed

Matsumoto, Michio; Shimizu, Sunao; Sotoike, Rina; Watanabe, Masayoshi; Iwasa, Yoshihiro; Itoh, Yoshimitsu; Aida, Takuzo

2017-11-15

Electric double layer (EDL) capacitors are promising as next-generation energy accumulators if their capacitances and operation voltages are both high. However, only few electrolytes can simultaneously fulfill these two requisites. Here we report that an oligomeric ionic liquid such as IL4 TFSI with four imidazolium ion units in its structure provides a wide electrochemical window of ∼5.0 V, similar to monomeric ionic liquids. Furthermore, electrochemical impedance measurements using Au working electrodes demonstrated that IL4 TFSI exhibits an exceptionally high EDL capacitance of ∼66 μF/cm 2 , which is ∼6 times as high as those of monomeric ionic liquids so far reported. We also found that an EDL-based field effect transistor (FET) using IL4 TFSI as a gate dielectric material and SrTiO 3 as a channel material displays a very sharp transfer curve with an enhanced carrier accumulation capability of ∼64 μF/cm 2 , as determined by Hall-effect measurements.

Electrical response of Pt/Ru/PbZr0.52Ti0.48O3/Pt capacitor as function of lead precursor excess

NASA Astrophysics Data System (ADS)

Gueye, Ibrahima; Le Rhun, Gwenael; Renault, Olivier; Defay, Emmanuel; Barrett, Nicholas

2017-11-01

We investigated the influence of the surface microstructure and chemistry of sol-gel grown PbZr0.52Ti0.48O3 (PZT) on the electrical performance of PZT-based metal-insulator-metal (MIM) capacitors as a function of Pb precursor excess. Using surface-sensitive, quantitative X-ray photoelectron spectroscopy and scanning electron microscopy, we confirm the presence of ZrOx surface phase. Low Pb excess gives rise to a discontinuous layer of ZrOx on a (100) textured PZT film with a wide band gap reducing the capacitance of PZT-based MIMs whereas the breakdown field is enhanced. At high Pb excess, the nanostructures disappear while the PZT grain size increases and the film texture becomes (111). Concomitantly, the capacitance density is enhanced by 8.7%, and both the loss tangent and breakdown field are reduced by 20 and 25%, respectively. The role of the low permittivity, dielectric interface layer on capacitance and breakdown is discussed.

Anomalous or regular capacitance? The influence of pore size dispersity on double-layer formation

NASA Astrophysics Data System (ADS)

Jäckel, N.; Rodner, M.; Schreiber, A.; Jeongwook, J.; Zeiger, M.; Aslan, M.; Weingarth, D.; Presser, V.

2016-09-01

The energy storage mechanism of electric double-layer capacitors is governed by ion electrosorption at the electrode surface. This process requires high surface area electrodes, typically highly porous carbons. In common organic electrolytes, bare ion sizes are below one nanometer but they are larger when we consider their solvation shell. In contrast, ionic liquid electrolytes are free of solvent molecules, but cation-anion coordination requires special consideration. By matching pore size and ion size, two seemingly conflicting views have emerged: either an increase in specific capacitance with smaller pore size or a constant capacitance contribution of all micro- and mesopores. In our work, we revisit this issue by using a comprehensive set of electrochemical data and a pore size incremental analysis to identify the influence of certain ranges in the pore size distribution to the ion electrosorption capacity. We see a difference in solvation of ions in organic electrolytes depending on the applied voltage and a cation-anion interaction of ionic liquids in nanometer sized pores.

Layered conductive polymer on nylon membrane templates for high performance, thin-film supercapacitor electrodes

NASA Astrophysics Data System (ADS)

Shi, HaoTian Harvey; Naguib, Hani E.

2016-04-01

Flexible Thin-film Electrochemical Capacitors (ECs) are emerging technology that plays an important role as energy supply for various electronics system for both present era and the future. Intrinsically conductive polymers (ICPs) are promising pseudo-capacitive materials as they feature both good electrical conductivity and high specific capacitance. This study focuses on the construction and characterization of ultra-high surface area porous electrodes based on coating of nano-sized conductive polymer materials on nylon membrane templates. Herein, a novel nano-engineered electrode material based on nylon membranes was presented, which allows the creation of super-capacitor devices that is capable of delivering competitive performance, while maintaining desirable mechanical characteristics. With the formation of a highly conductive network with the polyaniline nano-layer, the electrical conductivity was also increased dramatically to facilitate the charge transfer process. Cyclic voltammetry and specific capacitance results showed promising application of this type of composite materials for future smart textile applications.

Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sermage, B.; Essa, Z.; Taleb, N.

2016-04-21

The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the space charge depth, the 1/C{sup 2} versus voltage curves are not linear. They indeed present a negative curvature. This can be explained by the existence of deep acceptors which ionise under a high electric field (large inverse voltage) and not at a low inverse voltage. The measured doping concentration in the electrochemical capacitance voltage increases strongly as the inverse voltage increases. Thanks to a comparison with the boron concentration measured by secondary ions mass spectrometry, wemore » show that the relevant doping concentrations in device layers are obtained for small inverse voltage in agreement with the existence of deep acceptors. At the large inverse voltage, the measured doping can be more than twice larger than the boron concentration measured with a secondary ion mass spectroscopy.« less

Study of Method for Designing the Power and the Capacitance of Fuel Cells and Electric Double-Layer Capacitors of Hybrid Railway Vehicle

NASA Astrophysics Data System (ADS)

Takizawa, Kenji; Kondo, Keiichiro

A hybrid railway traction system with fuel cells (FCs) and electric double layer-capacitors (EDLCs) is discussed in this paper. This system can save FC costs and absorb the regenerative energy. A method for designing FCs and EDLCs on the basis of the output power and capacitance, respectively, has not been reported, even though their design is one of the most important technical issues encountered in the design of hybrid railway vehicles. Such design method is presented along with a train load profile and an energy management strategy. The design results obtained using the proposed method are verified by performing numerical simulations of a running train. These results reveal that the proposed method for designing the EDLCs and FCs on the basis of the capacitance and power, respectively, and by using a method for controlling the EDLC voltage is sufficiently effective in designing efficient EDLCs and FCs of hybrid railway traction systems.

Electric double layer capacitors employing nitrogen and sulfur co-doped, hierarchically porous graphene electrodes with synergistically enhanced performance

NASA Astrophysics Data System (ADS)

Kannan, Aravindaraj G.; Samuthirapandian, Amaresh; Kim, Dong-Won

2017-01-01

Hierarchically porous graphene nanosheets co-doped with nitrogen and sulfur are synthesized via a simple hydrothermal method, followed by a pore activation step. Pore architectures are controlled by varying the ratio of chemical activation agents to graphene, and its influence on the capacitive performance is evaluated. The electric double layer capacitor (EDLC) assembled with optimized dual-doped graphene delivers a high specific capacitance of 146.6 F g-1 at a current density of 0.8 A g-1, which is higher than that of cells with un-doped and single-heteroatom doped graphene. The EDLC with dual-doped graphene electrodes exhibits stable cycling performance with a capacitance retention of 94.5% after 25,000 cycles at a current density of 3.2 A g-1. Such a good performance can be attributed to synergistic effects due to co-doping of the graphene nanosheets and the presence of hierarchical porous structures.

Impedance spectroscopy study of a catechol-modified activated carbon electrode as active material in electrochemical capacitor

NASA Astrophysics Data System (ADS)

Cougnon, C.; Lebègue, E.; Pognon, G.

2015-01-01

Modified activated carbon (Norit S-50) electrodes with electrochemical double layer (EDL) capacitance and redox capacitance contributions to the electric charge storage were tested in 1 M H2SO4 to quantify the benefit and the limitation of the surface redox reactions on the electrochemical performances of the resulting pseudo-capacitive materials. The electrochemical performances of an electrochemically anodized carbon electrode and a catechol-modified carbon electrode, which make use both EDL capacitance of the porous structure of the carbon and redox capacitance, were compared to the performances obtained for the pristine carbon. Nitrogen gas adsorption measurements have been used for studying the impact of the grafting on the BET surface area, pore size distribution, pore volume and average pore diameter. The electrochemical behavior of carbon materials was studied by cyclic voltammetry and electrochemical impedance spectroscopy (EIS). The EIS data were discussed by using a complex capacitance model that allows defining the characteristic time constant, the global capacitance and the frequency at which the maximum charge stored is reached. The EIS measurements were achieved at different dc potential values where a redox activity occurs and the evolution of the capacitance and the capacitive relaxation time with the electrode potential are presented. Realistic galvanostatic charge/discharge measurements performed at different current rates corroborate the results obtained by impedance.

Determination of charge transfer resistance and capacitance of microbial fuel cell through a transient response analysis of cell voltage.

PubMed

Ha, Phuc Thi; Moon, Hyunsoo; Kim, Byung Hong; Ng, How Yong; Chang, In Seop

2010-03-15

An alternative method for determining the charge transfer resistance and double-layer capacitance of microbial fuel cells (MFCs), easily implemented without a potentiostat, was developed. A dynamic model with two parameters, the charge transfer resistance and double-layer capacitance of electrodes, was derived from a linear differential equation to depict the current generation with respect to activation overvoltage. This model was then used to fit the transient cell voltage response to the current step change during the continuous operation of a flat-plate type MFC fed with acetate. Variations of the charge transfer resistance and the capacitance value with respect to the MFC design conditions (biocatalyst existence and electrode area) and operating parameters (acetate concentration and buffer strength in the catholyte) were then determined to elucidate the validity of the proposed method. This model was able to describe the dynamic behavior of the MFC during current change in the activation loss region; having an R(2) value of over 0.99 in most tests. Variations of the charge transfer resistance value (thousands of Omega) according to the change of the design factors and operational factors were well-correlated with the corresponding MFC performances. However, though the capacitance values (approximately 0.02 F) reflected the expected trend according to the electrode area change and catalyst property, they did not show significant variation with changes in either the acetate concentration or buffer strength. (c) 2009 Elsevier B.V. All rights reserved.

High Efficiency Organic/Silicon-Nanowire Hybrid Solar Cells: Significance of Strong Inversion Layer

PubMed Central

Yu, Xuegong; Shen, Xinlei; Mu, Xinhui; Zhang, Jie; Sun, Baoquan; Zeng, Lingsheng; Yang, Lifei; Wu, Yichao; He, Hang; Yang, Deren

2015-01-01

Organic/silicon nanowires (SiNWs) hybrid solar cells have recently been recognized as one of potentially low-cost candidates for photovoltaic application. Here, we have controllably prepared a series of uniform silicon nanowires (SiNWs) with various diameters on silicon substrate by metal-assisted chemical etching followed by thermal oxidization, and then fabricated the organic/SiNWs hybrid solar cells with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). It is found that the reflective index of SiNWs layer for sunlight depends on the filling ratio of SiNWs. Compared to the SiNWs with the lowest reflectivity (LR-SiNWs), the solar cell based on the SiNWs with low filling ratio (LF-SiNWs) has a higher open-circuit voltage and fill factor. The capacitance-voltage measurements have clarified that the built-in potential barrier at the LF-SiNWs/PEDOT:PSS interface is much larger than that at the LR-SiNWs/PEDOT one, which yields a strong inversion layer generating near the silicon surface. The formation of inversion layer can effectively suppress the carrier recombination, reducing the leakage current of solar cell, and meanwhile transfer the LF-SiNWs/PEDOT:PSS device into a p-n junction. As a result, a highest efficiency of 13.11% is achieved for the LF-SiNWs/PEDOT:PSS solar cell. These results pave a way to the fabrication of high efficiency organic/SiNWs hybrid solar cells. PMID:26610848

High Efficiency Organic/Silicon-Nanowire Hybrid Solar Cells: Significance of Strong Inversion Layer.

PubMed

Yu, Xuegong; Shen, Xinlei; Mu, Xinhui; Zhang, Jie; Sun, Baoquan; Zeng, Lingsheng; Yang, Lifei; Wu, Yichao; He, Hang; Yang, Deren

2015-11-27

Organic/silicon nanowires (SiNWs) hybrid solar cells have recently been recognized as one of potentially low-cost candidates for photovoltaic application. Here, we have controllably prepared a series of uniform silicon nanowires (SiNWs) with various diameters on silicon substrate by metal-assisted chemical etching followed by thermal oxidization, and then fabricated the organic/SiNWs hybrid solar cells with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) ( PSS). It is found that the reflective index of SiNWs layer for sunlight depends on the filling ratio of SiNWs. Compared to the SiNWs with the lowest reflectivity (LR-SiNWs), the solar cell based on the SiNWs with low filling ratio (LF-SiNWs) has a higher open-circuit voltage and fill factor. The capacitance-voltage measurements have clarified that the built-in potential barrier at the LF-SiNWs/ PSS interface is much larger than that at the LR-SiNWs/PEDOT one, which yields a strong inversion layer generating near the silicon surface. The formation of inversion layer can effectively suppress the carrier recombination, reducing the leakage current of solar cell, and meanwhile transfer the LF-SiNWs/ PSS device into a p-n junction. As a result, a highest efficiency of 13.11% is achieved for the LF-SiNWs/ PSS solar cell. These results pave a way to the fabrication of high efficiency organic/SiNWs hybrid solar cells.

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

NASA Astrophysics Data System (ADS)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

Humidity influenced capacitance and resistance of an Al/DNA/Al Schottky diode irradiated by alpha particles

PubMed Central

Al-Ta’ii, Hassan Maktuff Jaber; Amin, Yusoff Mohd; Periasamy, Vengadesh

2016-01-01

Deoxyribonucleic acid or DNA based sensors, especially as humidity and alpha particle sensors have become quite popular in recent times due to flexible and highly optimizable nature of this fundamental biomaterial. Application of DNA electronics allow for more sensitive, accurate and effective sensors to be developed and fabricated. In this work, we examined the effect of different humidity conditions on the capacitive and resistive response of Aluminum (Al)/DNA/Al Schottky barrier structure when bombarded by time-dependent dosages of alpha particles. Based on current-voltage profiles, which demonstrated rectifying behaviours, Schottky diode parameters such as ideality factor, barrier height and series resistance was calculated. Results observed generally pointed towards a decrease in the resistance value from the pristine to the radiated structures. It was also demonstrated that under the effect of humidity, the capacitance of the DNA thin film increased from 0.05894 to 92.736 nF, with rising relative humidity level. We also observed the occurrence of the hypersensitivity phenomena after alpha irradiation between 2 to 4 min by observing a drop in the series resistance, crucial in the study of DNA damage and repair mechanisms. These observations may also suggest the exciting possibility of utilizing Al/DNA/Al Schottky diodes as potentially sensitive humidity sensors. PMID:27160654

Chemical solution deposition method of fabricating highly aligned MgO templates

DOEpatents

Paranthaman, Mariappan Parans [Knoxville, TN; Sathyamurthy, Srivatsan [Knoxville, TN; Aytug, Tolga [Knoxville, TN; Arendt, Paul N [Los Alamos, NM; Stan, Liliana [Los Alamos, NM; Foltyn, Stephen R [Los Alamos, NM

2012-01-03

A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La.sub.2Zr.sub.2O.sub.7 or Gd.sub.2Zr.sub.2O.sub.7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

Preparation of porous carbon spheres from 2-keto-l-gulonic acid mother liquor by oxidation and activation for electric double-layer capacitor application.

PubMed

Hao, Zhi-Qiang; Cao, Jing-Pei; Zhao, Xiao-Yan; Wu, Yan; Zhu, Jun-Sheng; Dang, Ya-Li; Zhuang, Qi-Qi; Wei, Xian-Yong

2018-03-01

A novel strategy is proposed for the increase of specific surface area (SSA) of porous carbon sphere (PCS) by oxidation and activation. 2-keto-l-gulonic acid mother liquor (GAML) as a high-pollution waste has a relatively high value of reutilization. For its high value-added utilization, GAML is used as the precursor for preparation of PCS as carbon-based electrode materials for electric double-layer capacitor. PCS is prepared by hydrothermal carbonization, carbonization and KOH activation, and Fe(NO 3 ) 3 9H 2 O is used as an oxidizing agent during carbonization. The as-prepared PCS has excellent porosity and high SSA of 2478 m 2  g -1 . Meanwhile, the pore structure of PCS can be controlled by the adjustment of carbonization parameters (carbonization temperature and the loading of Fe(NO 3 ) 3 9H 2 O). Besides, the SSA and specific capacitance of PCS can be increased remarkably when Fe(NO 3 ) 3 9H 2 O is added in carbonization. The specific capacitance of PCS can reach 303.7 F g -1 at 40 mA g -1 . PCSs as electrode material have superior electrochemical stability. After 8000 cycles, the capacitance retention is 98.3% at 2 A g -1 . The electric double-layer capacitance of PCS is improved when CS is carbonized with Fe(NO 3 ) 3 9H 2 O, and the economic and environmental benefits are achieved by the effective recycle of GAML. Copyright © 2017 Elsevier Inc. All rights reserved.

Anisotropic capillary barrier for waste site surface covers

DOEpatents

Stormont, J.C.

1996-08-27

Waste sites are capped or covered upon closure. The cover structure incorporates a number of different layers each having a contributory function. One such layer is the barrier layer. Traditionally the barriers have been compacted soil and geosynthetics. These types of barriers have not been successfully implemented in unsaturated ground conditions like those found in dry climates. Capillary barriers have been proposed as barrier layers in dry environments, but the divergence length of these barriers has been found to be inadequate. An alternative to the capillary barrier is a anisotropic capillary barrier. An anisotropic capillary barrier has an increased divergence length which results in more water being diverted laterally preventing the majority of water from percolating in a downward direction through the barrier. 10 figs.

Anisotropic capillary barrier for waste site surface covers

DOEpatents

Stormont, John C.

1996-01-01

Waste sites are capped or covered upon closure. The cover structure incorporates a number of different layers each having a contributory function. One such layer is the barrier layer. Traditionally the barriers have been compacted soil and geosynthetics. These types of barriers have not been successfully implemented in unsaturated ground conditions like those found in dry climates. Capillary barriers have been proposed as barrier layers in dry environments, but the divergence length of these barriers has been found to be inadequate. An alternative to the capillary barrier is a anisotropic capillary barrier. An anisotropic capillary barrier has an increased divergence length which results in more water being diverted laterally preventing the majority of water from percolating in a downward direction through the barrier.

Macroscopic fibres of CNTs as electrodes for multifunctional electric double layer capacitors: from quantum capacitance to device performance.

PubMed

Senokos, E; Reguero, V; Palma, J; Vilatela, J J; Marcilla, Rebeca

2016-02-14

In this work we present a combined electrochemical and mechanical study of mesoporous electrodes based on CNT fibres in the context of electric double layer capacitors. We show that through control of the synthetic and assembly processes of the fibres, it is possible to obtain an active material that combines a surface area of 250 m(2) g(-1), high electrical conductivity (3.5 × 10(5) S m(-1)) and mechanical properties in the high-performance range including toughness (35 J g(-1)) comparable to that of aramid fibre (e.g. Kevlar). These properties are a consequence of the predominant orientation of the CNTs, observed by wide- and small-angle X-ray diffraction, and to the exceptionally long CNT length on the millimetre scale. Cyclic voltammetry measurements in a three-electrode configuration and using 1-butyl-3-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (PYR14TFSI) ionic liquid electrolyte, show that the CNT fibres have a large quantum capacitance, evidenced by the near linear dependence of geometric capacitance (and conductivity) on potential bias. This reflects the low dimensionality of the CNT building blocks, which were purposely synthesised to have 1-5 layers and a high degree of graphitization. From the charge-discharge measurements of supercapacitor devices with symmetric CNT fibre electrodes we obtain power and energy densities as high as 58 kW kg(-1) and 14 Wh kg(-1), respectively. These record-high values for CNT fibre-based supercapacitors, are a consequence of the low equivalent series resistance due to the high conductivity of the fibres, the large contribution from quantum capacitance, and the wide stability window of the ionic liquid (3.5 V). Cycle life experiments demonstrate stable capacitance and energy retention over 10,000 cycles of charge-discharge at 3.5 V.

Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub; Chui, Chi On; Saraswat, Krishna C.; McIntyre, Paul C.

2003-09-01

High-k dielectric deposition processes for gate dielectric preparation on Si surfaces usually result in the unavoidable and uncontrolled formation of a thin interfacial oxide layer. Atomic layer deposition of ˜55-Å ZrO2 film on a Ge (100) substrate using ZrCl4 and H2O at 300 °C was found to produce local epitaxial growth [(001) Ge//(001) ZrO2 and [100] Ge//[100] ZrO2] without a distinct interfacial layer, unlike the situation observed when ZrO2 is deposited using the same method on Si. Relatively large lattice mismatch (˜10%) between ZrO2 and Ge produced a high areal density of interfacial misfit dislocations. Large hysteresis (>200 mV) and high frequency dispersion were observed in capacitance-voltage measurements due to the high density of interface states. However, a low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density regardless of the high defect density.

Study on the Ag Nanowire/PDMS Pressure Sensors with Three-Layer and Back-to-Back Structures

NASA Astrophysics Data System (ADS)

Wu, Jianhao; Lan, Qiuming; Yang, Weijia; He, Xin; Yue, Yunting; Jiang, Jiayi; Jiang, Tinghui

2018-01-01

Ag nanowire (NW)/polydimethylsiloxane (PDMS) pressure sensors with the three-layer and back-to-back structures were fabricated by a coating-peeling method. The bending and pressing responses of the sensors were comparably investigated. The results reveal that two kinds of pressure sensors show similar response linearity in the bending test with a bending angle of 0-180°. However, the response sensitivity of the three-layer structured pressure sensor is superior to that of the back-to-back structural one, which exhibits that the relationship between the capacitance value (Y) and the bending angle (X) is: Y = 0.01244X + 2.9763. On the contrary, in the pressing test, the response sensitivity of the back-to-back structural sensor is better than that of the three-layer structural one. The relationship between capacitance value (Y) and the number of paper clips (pressure, X2) is Y = 0.09241X2 + 88.03597.

Interface and permittivity simultaneous reconstruction in electrical capacitance tomography based on boundary and finite-elements coupling method

PubMed Central

Ren, Shangjie; Dong, Feng

2016-01-01

Electrical capacitance tomography (ECT) is a non-destructive detection technique for imaging the permittivity distributions inside an observed domain from the capacitances measurements on its boundary. Owing to its advantages of non-contact, non-radiation, high speed and low cost, ECT is promising in the measurements of many industrial or biological processes. However, in the practical industrial or biological systems, a deposit is normally seen in the inner wall of its pipe or vessel. As the actual region of interest (ROI) of ECT is surrounded by the deposit layer, the capacitance measurements become weakly sensitive to the permittivity perturbation occurring at the ROI. When there is a major permittivity difference between the deposit and the ROI, this kind of shielding effect is significant, and the permittivity reconstruction becomes challenging. To deal with the issue, an interface and permittivity simultaneous reconstruction approach is proposed. Both the permittivity at the ROI and the geometry of the deposit layer are recovered using the block coordinate descent method. The boundary and finite-elements coupling method is employed to improve the computational efficiency. The performance of the proposed method is evaluated with the simulation tests. This article is part of the themed issue ‘Supersensing through industrial process tomography’. PMID:27185960

Active pore space utilization in nanoporous carbon-based supercapacitors: Effects of conductivity and pore accessibility

NASA Astrophysics Data System (ADS)

Seredych, Mykola; Koscinski, Mikolaj; Sliwinska-Bartkowiak, Malgorzata; Bandosz, Teresa J.

2012-12-01

Composites of commercial graphene and nanoporous sodium-salt-polymer-derived carbons were prepared with 5 or 20 weight% graphene. The materials were characterized using the adsorption of nitrogen, SEM/EDX, thermal analysis, Raman spectroscopy and potentiometric titration. The samples' conductivity was also measured. The performance of the carbon composites in energy storage was linked to their porosity and electronic conductivity. The small pores (<0.7) were found as very active for double layer capacitance. It was demonstrated that when double layer capacitance is a predominant mechanism of charge storage, the degree of the pore space utilization for that storage can be increased by increasing the conductivity of the carbons. That active pore space utilization is defined as gravimetric capacitance per unit pore volume in pores smaller than 0.7 nm. Its magnitude is affected by conductivity of the carbon materials. The functional groups, besides pseudocapacitive contribution, increased the wettability and thus the degree of the pore space utilization. Graphene phase, owing to its conductivity, also took part in an insitu increase of the small pore accessibility and thus the capacitance of the composites via enhancing an electron transfer to small pores and thus imposing the reduction of groups blocking the pores for electrolyte ions.

Computational Insights into Materials and Interfaces for Capacitive Energy Storage

DOE PAGES

Zhan, Cheng; Lian, Cheng; Zhang, Yu; ...

2017-04-24

Supercapacitors such as electric double-layer capacitors (EDLCs) and pseudocapacitors are becoming increasingly important in the field of electrical energy storage. Theoretical study of energy storage in EDLCs focuses on solving for the electric double-layer structure in different electrode geometries and electrolyte components, which can be achieved by molecular simulations such as classical molecular dynamics (MD), classical density functional theory (classical DFT), and Monte-Carlo (MC) methods. In recent years, combining first-principles and classical simulations to investigate the carbon-based EDLCs has shed light on the importance of quantum capacitance in graphene-like 2D systems. More recently, the development of joint density functional theorymore » (JDFT) enables self-consistent electronic-structure calculation for an electrode being solvated by an electrolyte. In contrast with the large amount of theoretical and computational effort on EDLCs, theoretical understanding of pseudocapacitance is very limited. In this review, we first introduce popular modeling methods and then focus on several important aspects of EDLCs including nanoconfinement, quantum capacitance, dielectric screening, and novel 2D electrode design; we also briefly touch upon pseudocapactive mechanism in RuO 2. We summarize and conclude with an outlook for the future of materials simulation and design for capacitive energy storage.« less

All-nanotube stretchable supercapacitor with low equivalent series resistance.

PubMed

Gilshteyn, Evgenia P; Amanbayev, Daler; Anisimov, Anton S; Kallio, Tanja; Nasibulin, Albert G

2017-12-12

We report high-performance, stable, low equivalent series resistance all-nanotube stretchable supercapacitor based on single-walled carbon nanotube film electrodes and a boron nitride nanotube separator. A layer of boron nitride nanotubes, fabricated by airbrushing from isopropanol dispersion, allows avoiding problem of high internal resistance and short-circuiting of supercapacitors. The device, fabricated in a two-electrode test cell configuration, demonstrates electrochemical double layer capacitance mechanism and retains 96% of its initial capacitance after 20 000 electrochemical charging/discharging cycles with the specific capacitance value of 82 F g -1 and low equivalent series resistance of 4.6 Ω. The stretchable supercapacitor prototype withstands at least 1000 cycles of 50% strain with a slight increase in the volumetric capacitance from 0.4 to 0.5 mF cm -3 and volumetric power density from 32 mW cm -3 to 40 mW cm -3 after stretching, which is higher than reported before. Moreover, a low resistance of 250 Ω for the as-fabricated stretchable prototype was obtained, which slightly decreased with the strain applied up to 200 Ω. Simple fabrication process of such devices can be easily extended making the all-nanotube stretchable supercapacitors, presented here, promising elements in future wearable devices.

Outer brain barriers in rat and human development

PubMed Central

Brøchner, Christian B.; Holst, Camilla B.; Møllgård, Kjeld

2015-01-01

Complex barriers at the brain's surface, particularly in development, are poorly defined. In the adult, arachnoid blood-cerebrospinal fluid (CSF) barrier separates the fenestrated dural vessels from the CSF by means of a cell layer joined by tight junctions. Outer CSF-brain barrier provides diffusion restriction between brain and subarachnoid CSF through an initial radial glial end feet layer covered with a pial surface layer. To further characterize these interfaces we examined embryonic rat brains from E10 to P0 and forebrains from human embryos and fetuses (6–21st weeks post-conception) and adults using immunohistochemistry and confocal microscopy. Antibodies against claudin-11, BLBP, collagen 1, SSEA-4, MAP2, YKL-40, and its receptor IL-13Rα2 and EAAT1 were used to describe morphological characteristics and functional aspects of the outer brain barriers. Claudin-11 was a reliable marker of the arachnoid blood-CSF barrier. Collagen 1 delineated the subarachnoid space and stained pial surface layer. BLBP defined radial glial end feet layer and SSEA-4 and YKL-40 were present in both leptomeningeal cells and end feet layer, which transformed into glial limitans. IL-13Rα2 and EAAT1 were present in the end feet layer illustrating transporter/receptor presence in the outer CSF-brain barrier. MAP2 immunostaining in adult brain outlined the lower border of glia limitans; remnants of end feet were YKL-40 positive in some areas. We propose that outer brain barriers are composed of at least 3 interfaces: blood-CSF barrier across arachnoid barrier cell layer, blood-CSF barrier across pial microvessels, and outer CSF-brain barrier comprising glial end feet layer/pial surface layer. PMID:25852456

Outer brain barriers in rat and human development.

PubMed

Brøchner, Christian B; Holst, Camilla B; Møllgård, Kjeld

2015-01-01

Complex barriers at the brain's surface, particularly in development, are poorly defined. In the adult, arachnoid blood-cerebrospinal fluid (CSF) barrier separates the fenestrated dural vessels from the CSF by means of a cell layer joined by tight junctions. Outer CSF-brain barrier provides diffusion restriction between brain and subarachnoid CSF through an initial radial glial end feet layer covered with a pial surface layer. To further characterize these interfaces we examined embryonic rat brains from E10 to P0 and forebrains from human embryos and fetuses (6-21st weeks post-conception) and adults using immunohistochemistry and confocal microscopy. Antibodies against claudin-11, BLBP, collagen 1, SSEA-4, MAP2, YKL-40, and its receptor IL-13Rα2 and EAAT1 were used to describe morphological characteristics and functional aspects of the outer brain barriers. Claudin-11 was a reliable marker of the arachnoid blood-CSF barrier. Collagen 1 delineated the subarachnoid space and stained pial surface layer. BLBP defined radial glial end feet layer and SSEA-4 and YKL-40 were present in both leptomeningeal cells and end feet layer, which transformed into glial limitans. IL-13Rα2 and EAAT1 were present in the end feet layer illustrating transporter/receptor presence in the outer CSF-brain barrier. MAP2 immunostaining in adult brain outlined the lower border of glia limitans; remnants of end feet were YKL-40 positive in some areas. We propose that outer brain barriers are composed of at least 3 interfaces: blood-CSF barrier across arachnoid barrier cell layer, blood-CSF barrier across pial microvessels, and outer CSF-brain barrier comprising glial end feet layer/pial surface layer.

Effect of Pore Structure and Chemistry on the Performance of Activated Oil Sands Petroleum Coke Electrodes for use in Electrochemical Double-Layer Capacitors

NASA Astrophysics Data System (ADS)

Zuliani, Jocelyn Ellen

Electrical energy storage is a limiting barrier to widespread usage and commercialization of sustainable and renewable energy sources, such as wind and solar energy, as well as integration of electric vehicles. Electrochemical double-layer capacitors (EDLCs) are a promising energy storage technology that offers the benefits of high power density, long cycle life, rapid charging rates, and moderate energy density. The energy storage mechanism of EDLCs is physical ion adsorption on the surface of porous carbon electrodes. This thesis is an investigation of three different sections relating to EDLCs: 1) techniques to properly characterize novel porous carbon electrode materials, 2) investigation of activated oil sands petroleum coke (APC) as the electrode material for EDLCs, and 3) a systematic study of the effects of porous carbon structure and chemistry on EDLC performance. In the first section, it was shown that variations in operating conditions and testing techniques can lead to discrepancies in measured and reported capacitance. Therefore, it was concluded that a standardized approach is necessary in order to properly compare different porous carbon electrodes. In the second section, APC was investigated as a novel electrode material for EDLCs. PetCoke is a carbon dense material that can be activated with potassium hydroxide to generate high surface area porous carbon materials. These materials show promising electrochemical performance in EDLCs, with capacitance values up to 400 Fg-1 in 4M potassium hydroxide aqueous electrolytes, depending on the operating conditions. Additionally, the power density of these materials is comparable to that of other carbon nanomaterials, which are more costly and challenging to produce. Finally, the third section investigates the relationship between measured capacitance, and carbon macrostructure, meso-structure, microstructure, and oxygen content. In each of these studies, the desired parameter was varied, while all others (surface area, pore size, chemistry) were maintained constant. Through this systematic approach, this thesis investigates and quantifies the relationship between EDLC performance and important characteristic parameters through isolation of each individual parameter. By understanding the key structural and chemical features that improve EDLC performance, focus can be placed on engineering a sustainable and economic porous carbon material that has these desired features.

Macroscopic fibres of CNTs as electrodes for multifunctional electric double layer capacitors: from quantum capacitance to device performance

NASA Astrophysics Data System (ADS)

Senokos, E.; Reguero, V.; Palma, J.; Vilatela, J. J.; Marcilla, Rebeca

2016-02-01

In this work we present a combined electrochemical and mechanical study of mesoporous electrodes based on CNT fibres in the context of electric double layer capacitors. We show that through control of the synthetic and assembly processes of the fibres, it is possible to obtain an active material that combines a surface area of 250 m2 g-1, high electrical conductivity (3.5 × 105 S m-1) and mechanical properties in the high-performance range including toughness (35 J g-1) comparable to that of aramid fibre (e.g. Kevlar). These properties are a consequence of the predominant orientation of the CNTs, observed by wide- and small-angle X-ray diffraction, and to the exceptionally long CNT length on the millimetre scale. Cyclic voltammetry measurements in a three-electrode configuration and using 1-butyl-3-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (PYR14TFSI) ionic liquid electrolyte, show that the CNT fibres have a large quantum capacitance, evidenced by the near linear dependence of geometric capacitance (and conductivity) on potential bias. This reflects the low dimensionality of the CNT building blocks, which were purposely synthesised to have 1-5 layers and a high degree of graphitization. From the charge-discharge measurements of supercapacitor devices with symmetric CNT fibre electrodes we obtain power and energy densities as high as 58 kW kg-1 and 14 Wh kg-1, respectively. These record-high values for CNT fibre-based supercapacitors, are a consequence of the low equivalent series resistance due to the high conductivity of the fibres, the large contribution from quantum capacitance, and the wide stability window of the ionic liquid (3.5 V). Cycle life experiments demonstrate stable capacitance and energy retention over 10 000 cycles of charge-discharge at 3.5 V.In this work we present a combined electrochemical and mechanical study of mesoporous electrodes based on CNT fibres in the context of electric double layer capacitors. We show that through control of the synthetic and assembly processes of the fibres, it is possible to obtain an active material that combines a surface area of 250 m2 g-1, high electrical conductivity (3.5 × 105 S m-1) and mechanical properties in the high-performance range including toughness (35 J g-1) comparable to that of aramid fibre (e.g. Kevlar). These properties are a consequence of the predominant orientation of the CNTs, observed by wide- and small-angle X-ray diffraction, and to the exceptionally long CNT length on the millimetre scale. Cyclic voltammetry measurements in a three-electrode configuration and using 1-butyl-3-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (PYR14TFSI) ionic liquid electrolyte, show that the CNT fibres have a large quantum capacitance, evidenced by the near linear dependence of geometric capacitance (and conductivity) on potential bias. This reflects the low dimensionality of the CNT building blocks, which were purposely synthesised to have 1-5 layers and a high degree of graphitization. From the charge-discharge measurements of supercapacitor devices with symmetric CNT fibre electrodes we obtain power and energy densities as high as 58 kW kg-1 and 14 Wh kg-1, respectively. These record-high values for CNT fibre-based supercapacitors, are a consequence of the low equivalent series resistance due to the high conductivity of the fibres, the large contribution from quantum capacitance, and the wide stability window of the ionic liquid (3.5 V). Cycle life experiments demonstrate stable capacitance and energy retention over 10 000 cycles of charge-discharge at 3.5 V. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07697h

High Operating Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Hill, Cory J. (Inventor); Seibel, Alexander (Inventor); Bandara, Sumith Y. (Inventor); Gunapala, Sarath D. (Inventor)

2015-01-01

A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.

Early Stage Anodic Instability of Glassy Carbon Electrodes in Propylene Carbonate Solvent Containing Lithium Hexafluorophosphate

DOE PAGES

Carino, Emily V.; Newman, Daniel J.; Connell, Justin G.; ...

2017-09-19

In this paper, irreversible changes to the morphology of glassy carbon (GC) electrodes at potentials between 3.5 and 4.5 V vs Li/Li + in propylene carbonate (PC) solvent containing lithium hexafluorophosphate (LiPF 6) are reported. Analysis of cyclic voltammetry (CV) experiments in the range of 3.0 to 6.0 V shows that the capacitance of the electrochemical double -layer increased irreversibly beginning at potentials as low as 3.5 V. These changes resulted from nonfaradaic interactions, and were not due to oxidative electrochemical decomposition of the electrode and electrolyte, anion intercalation, nor caused by the presence of water, a common impurity inmore » organic electrolyte solutions. Atomic force microscopy (AFM) images revealed that increasing the potential of a bare GC surface from 3.0 to 4.5 V resulted in a 6X increase in roughness, in good agreement with the changes in double -layer capacitance. Treating the GC surface via exposure to trichloromethylsilane vapors resulted in a stable double -layer capacitance between 3.0 and 4.5 V, and this treatment also correlated with less roughening. Lastly, these results inform future efforts aimed at controlling surface composition and morphology of carbon electrodes.« less

Concentration Fluctuations and Capacitive Response in Dense Ionic Solutions.

PubMed

Uralcan, Betul; Aksay, Ilhan A; Debenedetti, Pablo G; Limmer, David T

2016-07-07

We use molecular dynamics simulations in a constant potential ensemble to study the effects of solution composition on the electrochemical response of a double layer capacitor. We find that the capacitance first increases with ion concentration following its expected ideal solution behavior but decreases upon approaching a pure ionic liquid in agreement with recent experimental observations. The nonmonotonic behavior of the capacitance as a function of ion concentration results from the competition between the independent motion of solvated ions in the dilute regime and solvation fluctuations in the concentrated regime. Mirroring the capacitance, we find that the characteristic decay length of charge density correlations away from the electrode is also nonmonotonic. The correlation length first decreases with ion concentration as a result of better electrostatic screening but increases with ion concentration as a result of enhanced steric interactions. When charge fluctuations induced by correlated ion-solvent fluctuations are large relative to those induced by the pure ionic liquid, such capacitive behavior is expected to be generic.

One-step electroplating porous graphene oxide electrodes of supercapacitors for ultrahigh capacitance and energy density.

PubMed

Wang, Yongjie; Zhu, Jiaqi

2015-02-06

An electroplating method was used for the first time to synthesize 3D porous graphene oxide (PGO) architectures, exhibiting ultrahigh capacitance and energy density as electrodes of supercapacitors. Scanning electron microscopy illustrated the porous structures which promoted the stability and alleviated the stacking of the graphene oxide layers. As investigated in a three-electrode supercapacitor cell, PGO electrodes exhibited the maximum capacitance and energy of 973 F · g(-1) and 98.4 Wh · Kg(-1), which are better than current reports and comparable to batteries. At 4 A · g(-1) for high-power applications, PGO electrodes reached a capacitance, energy, and power density of 493 F · g(-1), 49.9 Wh · Kg(-1), and 1700 W · Kg(-1), and they retained ∼97.83% of capacitance after 10 000 charge/discharge processes. Furthermore, when the PGO was bent exaggeratedly, it still displayed identical properties, which is of important significance for supporting wearable devices.

Molecular Insights into Carbon Nanotube Supercapacitors: Capacitance Independent of Voltage and Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Guang; Li, Song; Atchison, Jennifer S.

2013-04-12

Molecular dynamics (MD) simulations of supercapacitors with single-walled carbon nanotube (SWCNT) electrodes in room-temperature ionic liquids were performed to investigate the influences of the applied electrical potential, the radius/curvature of SWCNTs, and temperature on their capacitive behavior. It is found that (1) SWCNTs-based supercapacitors exhibit a near-flat capacitance–potential curve, (2) the capacitance increases as the tube radius decreases, and (3) the capacitance depends little on the temperature. We report the first MD study showing the influence of the electrode curvature on the capacitance–potential curve and negligible dependence of temperature on capacitance of tubular electrode. The latter is in good agreementmore » with recent experimental findings and is attributed to the similarity of the electrical double layer (EDL) microstructure with temperature varying from 260 to 400 K. The electrode curvature effect is explained by the dominance of charge overscreening and increased ion density per unit area of electrode surface.« less

Application of poly (p-phenylene oxide) as blocking layer to reduce self-discharge in supercapacitors

NASA Astrophysics Data System (ADS)

Tevi, Tete; Yaghoubi, Houman; Wang, Jing; Takshi, Arash

2013-11-01

Supercapacitors are electrochemical energy storage devices with high power density. However, application of supercapacitors is limited mainly due to their high leakage current. In this work, application of an ultra-thin layer of electrodeposited poly (p-phenylene oxide) (PPO) has been investigated as a blocking layer to reduce the leakage current. The polymer was first deposited on a glassy carbon electrode. The morphology of the film was studied by atomic force microscopy (AFM), and the film thickness was estimated to be ˜1.5 nm by using the electrochemical impedance spectroscopy (EIS) technique. The same deposition method was applied to coat the surface of the activated carbon electrodes of a supercapacitor with PPO. The specific capacitance, the leakage current, and the series resistance were measured in two devices with and without the blocking layer. The results demonstrate that the application of the PPO layer reduced the leakage current by ˜78%. However, the specific capacitance was decreased by ˜56%, when the blocking layer was applied. Due to the lower rate of self-discharge, the suggested approach can be applied to fabricate devices with longer charge storage time.

The edge- and basal-plane-specific electrochemistry of a single-layer graphene sheet

PubMed Central

Yuan, Wenjing; Zhou, Yu; Li, Yingru; Li, Chun; Peng, Hailin; Zhang, Jin; Liu, Zhongfan; Dai, Liming; Shi, Gaoquan

2013-01-01

Graphene has a unique atom-thick two-dimensional structure and excellent properties, making it attractive for a variety of electrochemical applications, including electrosynthesis, electrochemical sensors or electrocatalysis, and energy conversion and storage. However, the electrochemistry of single-layer graphene has not yet been well understood, possibly due to the technical difficulties in handling individual graphene sheet. Here, we report the electrochemical behavior at single-layer graphene-based electrodes, comparing the basal plane of graphene to its edge. The graphene edge showed 4 orders of magnitude higher specific capacitance, much faster electron transfer rate and stronger electrocatalytic activity than those of graphene basal plane. A convergent diffusion effect was observed at the sub-nanometer thick graphene edge-electrode to accelerate the electrochemical reactions. Coupling with the high conductivity of a high-quality graphene basal plane, graphene edge is an ideal electrode for electrocatalysis and for the storage of capacitive charges. PMID:23896697

Freestanding polyaniline nanorods grown on graphene for highly capacitive energy storage

NASA Astrophysics Data System (ADS)

Li, Zijiong; Qin, Zhen; Yang, Baocheng; Guo, Jian; Wang, Haiyan; Zhang, Weiyang; Lv, Xiaowei; Stack, Alison

2015-02-01

Freestanding polyaniline (PANI) nanorods grown in situ on microwave-expanded graphene oxide (MEGO) sheets were prepared through a facile solution method. The morphological characterization indicates that large quantity of free-standing PANI nanorods with average diameter of 50 nm were uniformly deposited onto the double sides of the MEGO nanosheets to form a sandwich structure. The hybrid of PANI/MEGO (GPANI) exhibit high specific surface area and high electrical conductivity, compared with pristine PANI nanorods. When evaluated as electrodes for supercapacitors, the GPANI demonstrate high specific capacitance of 628 F g-1 at a current density of 1.1 A g-1, high-rate performance, and excellent cycle stability compared to individual component. Such excellent electrochemical performance should be attributed to the combined double-layer capacitance and pseudo -capacitance mechanisms from the MEGO sheets and PANI nanorods.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Kuaibing, E-mail: wangkb@njau.edu.cn; State Key Laboratory of Coordination Chemistry, Coordination Chemistry Institute, Nanjing University, Nanjing 210093; Lv, Bo

Hollow CuO/Co{sub 3}O{sub 4} hybrids, which inherited from its coordination polymer precursor consisting of sheets layer and nanoparticles layer composites, were synthesized and characterized by SEM, EDX, XRD and XPS. To assess its electrochemical capacitive performances, cyclic voltammetry, galvanostatic charging-discharging measurements and A.C. impedance tests were performed successively. The CuO/Co{sub 3}O{sub 4} hybrids had higher capacitance and lower charge transfer resistance than bare Co{sub 3}O{sub 4} nanostructures, revealing that it provided a protection layer and produced a synergistic effect due to the existence of CuO layer. The distinct synergistic effect could be further confirmed by endurance cycling tests. The capacitancemore » of the CuO/Co{sub 3}O{sub 4} hybrids was 111% retained after 500 cycles at a charging rate of 1.0 A g{sup −1} and remained an intense growth trend after 2000 cycles at scan rate of 200 mV s{sup −1}. - Graphical abstract: Hollow CuO/Co{sub 3}O{sub 4} hybrids are synthesized and display a peculiar synergetic effect on the resulting performances, which can further be evaluated and confirmed by series of electrochemical measurements. - Highlights: • Hollow CuO/Co{sub 3}O{sub 4} hybrids are synthesized from bimetallic-Schiff base polymer precursors. • The capacitance of the CuO/Co{sub 3}O{sub 4} hybrids keeps a growth tendency after 2000 cycles. • A synergetic effect is found for the hybrids in electrochemical energy storage process.« less

Ozone production using dielectric barrier discharge in oxygen and carbon dioxide

NASA Astrophysics Data System (ADS)

Pontiga, Francisco; Abidat, Roukia; Moreno, Helena; Agustín, Fernández-Rueda; Rebiaï, Saida

2015-09-01

The generation of ozone in oxygen and carbon dioxide using a planar dielectric barrier discharge (DBD) has been experimentally investigated. The DBD reactor was operated at moderate voltages (4.2 to 5.6 kV) and frequencies (50 to 500 Hz) and the gas flow rate was varied in the range 50 to 200 cm3/min. The averaged consumed power (<1 W) was evaluated using a monitor capacitor of known capacitance (1 μF). The effluent gas from the DBD reactor was diverted to a gas cell situated inside the sample compartment of a UV spectrophotometer. Therefore, ozone concentration was determined from the measurement of absorbance using Beer-Lambert law. The results have shown that ozone concentration in oxygen grows very linearly with the input power. In contrast, the production of ozone in carbon dioxide is less regular, which may be due to the deposition of a thin layer over the stainless steel electrode during the application of the electrical discharge. Moreover, the rate of ozone production with the injected energy density was found to be 500 times weaker in carbon dioxide than in pure oxygen. This work was supported by the Spanish Government Agency ``Ministerio de Ciencia e Innovación'' under Contract No. FIS2011-25161.

Electrolyte Engineering: Optimizing High-Rate Double-Layer Capacitances of Micropore- and Mesopore-Rich Activated Carbon.

PubMed

Chen, Ting-Hao; Yang, Cheng-Hsien; Su, Ching-Yuan; Lee, Tai-Chou; Dong, Quan-Feng; Chang, Jeng-Kuei

2017-09-22

Various types of electrolyte cations as well as binary cations are used to optimize the capacitive performance of activated carbon (AC) with different pore structures. The high-rate capability of micropore-rich AC, governed by the mobility of desolvated cations, can outperform that of mesopore-rich AC, which essentially depends on the electrolyte conductivity. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polyelectrolyte/Graphene Oxide Barrier Film for Flexible OLED.

PubMed

Yang, Seung-Yeol; Park, Jongwhan; Kim, Yong-Seog

2015-10-01

Ultra-thin flexible nano-composite barrier layer consists of graphene oxide and polyelectrolyte was prepared using the layer-by-layer processing method. Microstructures of the barrier layer was optimized via modifying coating conditions and inducing chemical reactions. Although the barrier layer consists of hydrophilic polyelectrolyte was not effective in blocking the water vapor permeation, the chemical reduction of graphene oxide as well as conversion of polyelectrolyte to hydrophobic nature were very effective in reducing the permeation.

3D polyaniline porous layer anchored pillared graphene sheets: enhanced interface joined with high conductivity for better charge storage applications.

PubMed

Sekar, Pandiaraj; Anothumakkool, Bihag; Kurungot, Sreekumar

2015-04-15

Here, we report synthesis of a 3-dimensional (3D) porous polyaniline (PANI) anchored on pillared graphene (G-PANI-PA) as an efficient charge storage material for supercapacitor applications. Benzoic acid (BA) anchored graphene, having spatially separated graphene layers (G-Bz-COOH), was used as a structure controlling support whereas 3D PANI growth has been achieved by a simple chemical oxidation of aniline in the presence of phytic acid (PA). The BA groups on G-Bz-COOH play a critical role in preventing the restacking of graphene to achieve a high surface area of 472 m(2)/g compared to reduced graphene oxide (RGO, 290 m(2)/g). The carboxylic acid (-COOH) group controls the rate of polymerization to achieve a compact polymer structure with micropores whereas the chelating nature of PA plays a crucial role to achieve the 3D growth pattern of PANI. This type of controlled interplay helps G-PANI-PA to achieve a high conductivity of 3.74 S/cm all the while maintaining a high surface area of 330 m(2)/g compared to PANI-PA (0.4 S/cm and 60 m(2)/g). G-PANI-PA thus conceives the characteristics required for facile charge mobility during fast charge-discharge cycles, which results in a high specific capacitance of 652 F/g for the composite. Owing to the high surface area along with high conductivity, G-PANI-PA displays a stable specific capacitance of 547 F/g even with a high mass loading of 3 mg/cm(2), an enhanced areal capacitance of 1.52 F/cm(2), and a volumetric capacitance of 122 F/cm(3). The reduced charge-transfer resistance (RCT) of 0.67 Ω displayed by G-PANI-PA compared to pure PANI (0.79 Ω) stands out as valid evidence of the improved charge mobility achieved by the system by growing the 3D PANI layer along the spatially separated layers of the graphene sheets. The low RCT helps the system to display capacitance retention as high as 65% even under a high current dragging condition of 10 A/g. High charge/discharge rates and good cycling stability are the other highlights of the supercapacitor system derived from this composite material.

Resistive and Capacitive γ-Ray Dosimeters Based On Triggered Depolymerization in Carbon Nanotube Composites.

PubMed

Zeininger, Lukas; He, Maggie; Hobson, Stephen T; Swager, Timothy M

2018-05-25

We report γ-ray dosimeters using carbon nanotubes wrapped with metastable poly(olefin sulfone)s (POSs) that readily depolymerize when exposed to ionizing radiation. New POSs, designed for wrapping single-walled carbon nanotubes (SWCNTs), are synthesized and characterized. The resulting POS-SWCNT composites serve as the active transducer in a novel class of γ-ray dosimeters. In our devices, polymer degradation results in immediate changes in the electronic potential of the POS-SWCNT active layers by decreasing the electron tunneling barriers between individualized tubes and by creating enhanced cofacial π-π electron contacts. By incorporating the SWCNT-POS composites into small resistive device platforms, we establish a rare example of real-time detection and dosimetry of radioactive ionizing radiation using organic-based materials. We show that the sensitivity of our platform closely depends on the intrinsic stability of the polymer matrix, the opacity toward γ-rays, and the dispersion efficiency (i.e., the individualization and isolation of the individual SWCNT charge carriers). Resistance decreases up to 65% after irradiation with a 40 krad dose demonstrates the high sensitivity of this novel class of γ-ray sensors. In addition, the detection mechanism was evaluated using a commercial capacitive device platform. The ease of fabrication and low power consumption of these small and inexpensive sensor platforms combined with appealing sensitivity parameters establishes the potential of the poly(olefin sulfone)-SWCNT composites to serve as a new transduction material in γ-ray sensor applications.

Modeling, fabrication and plasma actuator coupling of flexible pressure sensors for flow separation detection and control in aeronautical applications

NASA Astrophysics Data System (ADS)

Francioso, L.; De Pascali, C.; Pescini, E.; De Giorgi, M. G.; Siciliano, P.

2016-06-01

Preventing the flow separation could enhance the performance of propulsion systems and future civil aircraft. To this end, a fast detection of boundary layer separation is mandatory for a sustainable and successful application of active flow control devices, such as plasma actuators. The present work reports on the design, fabrication and functional tests of low-cost capacitive pressure sensors coupled with dielectric barrier discharge (DBD) plasma actuators to detect and then control flow separation. Finite element method (FEM) simulations were used to obtain information on the deflection and the stress distribution in different-shaped floating membranes. The sensor sensitivity as a function of the pressure load was also calculated by experimental tests. The results of the calibration of different capacitive pressure sensors are reported in this work, together with functional tests in a wind tunnel equipped with a curved wall plate on which a DBD plasma actuator was mounted to control the flow separation. The flow behavior was experimentally investigated by particle image velocimetry (PIV) measurements. Statistical and spectral analysis, applied to the output signals of the pressure sensor placed downstream of the profile leading edge, demonstrated that the sensor is able to discriminate different ionic wind velocity and turbulence conditions. The sensor sensitivity in the 0-100 Pa range was experimentally measured and it ranged between 0.0030 and 0.0046 pF Pa-1 for the best devices.

Interface properties of an O2 annealed Au/Ni/n-Al0.18Ga0.82N Schottky contact

NASA Astrophysics Data System (ADS)

Legodi, M. J.; Meyer, W. E.; Auret, F. D.

2012-05-01

We oxidized a Ni/Au metal bi-layer contact fabricated on HVPE Al0.18Ga0.82N from 373 K to 573 K in 100 K steps. In the range 1 kHz to 2 MHz, the Capacitance-Voltage-Frequency (C-V-f) measurements reveal a frequency dispersion of the capacitance and the presence of an anomalous peak at 0.4 V owing to the presence of interface states in the as deposited contact system. The dispersion was progressively removed by O2 anneals from temperatures as low as 373 K. These changes are accompanied by an improvement in the overall quality of the Schottky system: the ideality factor, n, improves from 2.09 to 1.26; the Schottky barrier height (SBH), determined by the Norde [1] method, increases from 0.72 eV to 1.54 eV. From the Nicollian and Goetzberger model [2], we calculated the energy distribution of the density of interface states, NSS. Around 1 eV above the Al0.18Ga0.82N valence band, NSS, decreases from 2.3×1012 eV-1 cm-2 for the un-annealed diodes to 1.3×1012 eV-1 cm-2 after the 573 K anneal. Our results suggest the formation of an insulating NiO leading to a MIS structure for the oxidized Au/Ni/Al0.18Ga0.82N contact.

Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Smith, K. V.; Yu, E. T.; Elsass, C. R.; Heying, B.; Speck, J. S.

2001-10-01

Local electronic properties in a molecular-beam-epitaxy-grown AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structure are probed using depth-resolved scanning capacitance microscopy. Theoretical analysis of contrast observed in scanning capacitance images acquired over a range of bias voltages is used to assess the possible structural origins of local inhomogeneities in electronic structure, which are shown to be concentrated in areas where Ga droplets had formed on the surface during growth. Within these regions, there are significant variations in the local electronic structure that are attributed to variations in both AlxGa1-xN layer thickness and Al composition. Increased charge trapping is also observed in these regions.

Analysis of differential and active charging phenomena on ATS-5 and ATS-6

NASA Technical Reports Server (NTRS)

Olsen, R. C.; Whipple, E. C., Jr.

1980-01-01

Spacecraft charging on the differential charging and artificial particle emission experiments on ATS 5 and ATS 6 were studied. Differential charging of spacecraft surfaces generated large electrostatic barriers to spacecraft generated electrons, from photoemission, secondary emission, and thermal emitters. The electron emitter could partially or totally discharge the satellite, but the mainframe recharged negatively in a few 10's of seconds. The time dependence of the charging behavior was explained by the relatively large capacitance for differential charging in comparison to the small spacecraft to space capacitance. A daylight charging event on ATS 6 was shown to have a charging behavior suggesting the dominance of differential charging on the absolute potential of the mainframe. Ion engine operations and plasma emission experiments on ATS 6 were shown to be an effective means of controlling the spacecraft potential in eclipse and sunlight. Elimination of barrier effects around the detectors and improving the quality of the particle data are discussed.

Characteristics of Capacity Coupled Discharge in Atmospheric Pressure Air

NASA Astrophysics Data System (ADS)

Sasaki, Tadahiro; Omukai, Reina; Mukaigawa, Seiji; Takaki, Koichi; Fujiwara, Tamiya; Mase, Hiroshi; Sato, Noriyoshi

This paper describes characteristics of capacity coupled discharge in atmospheric pressure air with focusing influence of gap length of point-to-plane electrode configuration on input power into the discharge. The discharge can be quenched in short time duration by inserting a small capacitance capacitor between the electrode and the ground. We employed a needle electrode and a coaxial cable as the quenching capacitor. The discharge was successfully quenched within 25 ns in duration according to 9.4 pF in a capacitance of the quenching capacitor. The discharge was classified as two modes; a spark mode and a corona mode. At the spark mode, the power consumed in the discharge plasma was almost 10 times as large as that of a conventional dielectric barrier discharge. At the corona mode, the consumed energy was almost same value with that of the dielectric barrier discharge. A velocity of the discharge development was obtained to be 3×105 m/s by an optical measurement.

Experimental investigation on electrical characteristics and dose measurement of dielectric barrier discharge plasma device used for therapeutic application

NASA Astrophysics Data System (ADS)

Shahbazi Rad, Zahra; Abbasi Davani, Fereydoun

2017-04-01

In this research, a Dielectric Barrier Discharge (DBD) plasma device operating in air has been made. The electrical characteristics of this device like instantaneous power, dissipated power, and discharge capacitance have been measured. Also, the effects of applied voltage on the dissipated power and discharge capacitance of the device have been investigated. The determination of electrical parameters is important in DBD plasma device used in living tissue treatment for choosing the proper treatment doses and preventing the destructive effects. The non-thermal atmospheric pressure DBD plasma source was applied for studying the acceleration of blood coagulation time, in vitro and wound healing time, in vivo. The citrated blood drops coagulated within 5 s treatment time by DBD plasma. The effects of plasma temperature and electric field on blood coagulation have been studied as an affirmation of the applicability of the constructed device. Also, the effect of constructed DBD plasma on wound healing acceleration has been investigated.

Experimental investigation on electrical characteristics and dose measurement of dielectric barrier discharge plasma device used for therapeutic application.

PubMed

Shahbazi Rad, Zahra; Abbasi Davani, Fereydoun

2017-04-01

In this research, a Dielectric Barrier Discharge (DBD) plasma device operating in air has been made. The electrical characteristics of this device like instantaneous power, dissipated power, and discharge capacitance have been measured. Also, the effects of applied voltage on the dissipated power and discharge capacitance of the device have been investigated. The determination of electrical parameters is important in DBD plasma device used in living tissue treatment for choosing the proper treatment doses and preventing the destructive effects. The non-thermal atmospheric pressure DBD plasma source was applied for studying the acceleration of blood coagulation time, in vitro and wound healing time, in vivo. The citrated blood drops coagulated within 5 s treatment time by DBD plasma. The effects of plasma temperature and electric field on blood coagulation have been studied as an affirmation of the applicability of the constructed device. Also, the effect of constructed DBD plasma on wound healing acceleration has been investigated.

Integrated power passives

NASA Technical Reports Server (NTRS)

Xie, Huikai (Inventor); Ngo, Khai D. T. (Inventor)

2013-01-01

A multi-layer film-stack and method for forming the multilayer film-stack is given where a series of alternating layers of conducting and dielectric materials are deposited such that the conducting layers can be selectively addressed. The use of the method to form integratable high capacitance density capacitors and complete the formation of an integrated power system-on-a-chip device including transistors, conductors, inductors, and capacitors is also given.

Transparent 1T-MoS2 nanofilm robustly anchored on substrate by layer-by-layer self-assembly and its ultra-high cycling stability as supercapacitors

NASA Astrophysics Data System (ADS)

Li, Danqin; Zhou, Weiqiang; Zhou, Qianjie; Ye, Guo; Wang, Tongzhou; Wu, Jing; Chang, Yanan; Xu, Jingkun

2017-09-01

Two-dimensional MoS2 materials have attracted more and more interest and been applied to the field of energy storage because of its unique physical, optical, electronic and electrochemical properties. However, there are no reports on high-stable transparent MoS2 nanofilms as supercapacitors electrode. Here, we describe a transparent 1T-MoS2 nanofilm electrode with super-long stability anchored on the indium tin oxide (ITO) glass by a simple alternate layer-by-layer (LBL) self-assembly of a highly charged cationic poly(diallyldimethylammonium chloride) (PDDA) and negative single-/few-layer 1T MoS2 nanosheets. The ITO/(PDDA/MoS2)20 electrode shows a transmittance of 51.6% at 550 nm and obviously exhibits excellent transparency by naked eye observation. Ultrasonic damage test validates that the (PDDA/MoS2)20 film with the average thickness about 50 nm is robustly anchored on ITO substrate. Additionally, the electrochemical results indicate that the ITO/(PDDA/MoS2)20 film shows areal capacitance of 1.1 mF cm-2 and volumetric capacitance of 220 F cm-3 at 0.04 mA cm-2, 130.6% retention of the original capacitance value after 5000 cycles. Further experiments indicate that the formation of transparent (PDDA/MoS2) x nanofilm by LBL self-assembly can be extended to other substrates, e.g., slide glass and flexible polyethylene terephthalate (PET). Thus, the easily available (PDDA/MoS2) x nanofilm electrode has great potential for application in transparent and/or flexible optoelectronic and electronics devices.

Screen printing of a capacitive cantilever-based motion sensor on fabric using a novel sacrificial layer process for smart fabric applications

NASA Astrophysics Data System (ADS)

Wei, Yang; Torah, Russel; Yang, Kai; Beeby, Steve; Tudor, John

2013-07-01

Free-standing cantilevers have been fabricated by screen printing sacrificial and structural layers onto a standard polyester cotton fabric. By printing additional conductive layers, a complete capacitive motion sensor on fabric using only screen printing has been fabricated. This type of free-standing structure cannot currently be fabricated using conventional fabric manufacturing processes. In addition, compared to conventional smart fabric fabrication processes (e.g. weaving and knitting), screen printing offers the advantages of geometric design flexibility and the ability to simultaneously print multiple devices of the same or different designs. Furthermore, a range of active inks exists from the printed electronics industry which can potentially be applied to create many types of smart fabric. Four cantilevers with different lengths have been printed on fabric using a five-layer structure with a sacrificial material underneath the cantilever. The sacrificial layer is subsequently removed at 160 °C for 30 min to achieve a freestanding cantilever above the fabric. Two silver electrodes, one on top of the cantilever and the other on top of the fabric, are used to capacitively detect the movement of the cantilever. In this way, an entirely printed motion sensor is produced on a standard fabric. The motion sensor was initially tested on an electromechanical shaker rig at a low frequency range to examine the linearity and the sensitivity of each design. Then, these sensors were individually attached to a moving human forearm to evaluate more representative results. A commercial accelerometer (Microstrain G-link) was mounted alongside for comparison. The printed sensors have a similar motion response to the commercial accelerometer, demonstrating the potential of a printed smart fabric motion sensor for use in intelligent clothing applications.

Tailoring graphene-based electrodes from semiconducting to metallic to increase the energy density in supercapacitors

NASA Astrophysics Data System (ADS)

Vatamanu, Jenel; Ni, Xiaojuan; Liu, Feng; Bedrov, Dmitry

2015-11-01

The semiconducting character of graphene and some carbon-based electrodes can lead to noticeably lower total capacitances and stored energy densities in electric double layer (EDL) capacitors. This paper discusses the chemical and electronic structure modifications that enhance the available energy bands, density of states and quantum capacitance of graphene substrates near the Fermi level, therefore restoring the conducting character of these materials. The doping of graphene with p or n dopants, such as boron and nitrogen atoms, or the introduction of vacancy defects that introduce zigzag edges, can significantly increase the quantum capacitance within the potential range of interest for the energy storage applications by either shifting the Dirac point away from the Fermi level or by eliminating the Dirac point. We show that a combination of doping and vacancies at realistic concentrations is sufficient to increase the capacitance of a graphene-based electrode to within 1 μF cm-2 from that of a metallic surface. Using a combination of ab initio calculations and classical molecular dynamics simulations we estimate how the changes in the quantum capacitance of these electrode materials affect the total capacitance stored by the open structure EDL capacitors containing room temperature ionic liquid electrolytes.

The composite capacitive behaviors of the N and S dual doped ordered mesoporous carbon with ultrahigh doping level

NASA Astrophysics Data System (ADS)

Zhang, Deyi; Lei, Longyan; Shang, Yonghua; Wang, Kunjie; Wang, Yi

2016-01-01

Heteroatoms doping provides a promising strategy for improving the energy density of supercapacitors based on the carbon electrodes. In this paper, we present a N and S dual doped ordered mesoporous carbon with ultrahigh doping level using dimethylglyoxime as pristine precursor. The N doping content of the reported materials varies from 6.6 to 15.6 at.% dependent on the carbonization temperature, and the S doping content varies from 0.46 to 1.01 at.%. Due to the ultrahigh heteroatoms doping content, the reported materials exhibit pronounced pseudo-capacitance. Meanwhile, the reported materials exhibit high surface areas (640⿿869 m2 g⿿1), large pore volume (0.71⿿1.08 cm2 g⿿1) and ordered pore structure. The outstanding textual properties endow the reported materials excellent electrical double-layer capacitance (EDLC). By effectively combining the pseudo-capacitance with EDLC, the reported materials exhibit a surprising energy storage/relax capacity with the highest specific capacitance of 565 F g⿿1, which value is 3.3 times higher than that of pristine CMK-3, and can compete against some conventional pseudo-capacitance materials.

Effect of noncovalent basal plane functionalization on the quantum capacitance in graphene.

PubMed

Ebrish, Mona A; Olson, Eric J; Koester, Steven J

2014-07-09

The concentration-dependent density of states in graphene allows the capacitance in metal-oxide-graphene structures to be tunable with the carrier concentration. This feature allows graphene to act as a variable capacitor (varactor) that can be utilized for wireless sensing applications. Surface functionalization can be used to make graphene sensitive to a particular species. In this manuscript, the effect on the quantum capacitance of noncovalent basal plane functionalization using 1-pyrenebutanoic acid succimidyl ester and glucose oxidase is reported. It is found that functionalized samples tested in air have (1) a Dirac point similar to vacuum conditions, (2) increased maximum capacitance compared to vacuum but similar to air, (3) and quantum capacitance "tuning" that is greater than that in vacuum and ambient atmosphere. These trends are attributed to reduced surface doping and random potential fluctuations as a result of the surface functionalization due to the displacement of H2O on the graphene surface and intercalation of a stable H2O layer beneath graphene that increases the overall device capacitance. The results are important for future application of graphene as a platform for wireless chemical and biological sensors.

Nanostructured mesophase electrode materials: modulating charge-storage behavior by thermal treatment.

PubMed

Kong, Hye Jeong; Kim, Saerona; Le, Thanh-Hai; Kim, Yukyung; Park, Geunsu; Park, Chul Soon; Kwon, Oh Seok; Yoon, Hyeonseok

2017-11-16

3D nanostructured carbonaceous electrode materials with tunable capacitive phases were successfully developed using graphene/particulate polypyrrole (PPy) nanohybrid (GPNH) precursors without a separate process for incorporating heterogeneous species. The electrode material, namely carbonized GPNHs (CGPNHs) featured a mesophase capacitance consisting of both electric double-layer (EDL) capacitive and pseudocapacitive elements at the molecular level. The ratio of EDL capacitive element to pseudocapacitive element (E-to-P) in the mesophase electrode materials was controlled by varying the PPy-to-graphite weight (P w /G w ) ratio and by heat treatment (T H ), which was demonstrated by characterizing the CGPNHs with elemental analysis, cyclic voltammetry, and a charge/discharge test. The concept of the E-to-P ratio (EPR) index was first proposed to easily identify the capacitive characteristics of the mesophase electrode using a numerical algorithm, which was reasonably consistent with the experimental findings. Finally, the CGPNHs were integrated into symmetric two-electrode capacitor cells, which rendered excellent energy and power densities in both aqueous and ionic liquid electrolytes. It is anticipated that our approach could be widely extended to fabricating versatile hybrid electrode materials with estimation of their capacitive characteristics.

Superior supercapacitors based on nitrogen and sulfur co-doped hierarchical porous carbon: Excellent rate capability and cycle stability

NASA Astrophysics Data System (ADS)

Zhang, Deyi; Han, Mei; Wang, Bing; Li, Yubing; Lei, Longyan; Wang, Kunjie; Wang, Yi; Zhang, Liang; Feng, Huixia

2017-08-01

Vastly improving the charge storage capability of supercapacitors without sacrificing their high power density and cycle performance would bring bright application prospect. Herein, we report a nitrogen and sulfur co-doped hierarchical porous carbon (NSHPC) with very superior capacitance performance fabricated by KOH activation of nitrogen and sulfur co-doped ordered mesoporous carbon (NSOMC). A high electrochemical double-layer (EDL) capacitance of 351 F g-1 was observed for the reported NSHPC electrodes, and the capacitance remains at 288 F g-1 even under a large current density of 20 A g-1. Besides the high specific capacitance and outstanding rate capability, symmetrical supercapacitor cell based on the NSHPC electrodes also exhibits an excellent cycling performance with 95.61% capacitance retention after 5000 times charge/discharge cycles. The large surface area caused by KOH activation (2056 m2 g-1) and high utilized surface area owing to the ideal micro/mesopores ratio (2.88), large micropores diameter (1.38 nm) and short opened micropores structure as well as the enhanced surface wettability induced by N and S heteroatoms doping and improved conductivity induced by KOH activation was found to be responsible for the very superior capacitance performance.

Energetic distributions of interface states Dit(phi sub s) of MOS transistors in extension of Kuhn's quasistatic C(V)-method

NASA Astrophysics Data System (ADS)

Krautschneider, W.; Wagemann, H. G.

1983-10-01

Kuhn's quasi-static C(V)-method has been extended to MOS transistors by considering the capacitances of the source and drain p-n junctions additionally to the MOS varactor circuit model. The width of the space charge layers w(phi sub s) is calculated as a function of the surface potential phi sub s and applied to the MOS capacitance as a function of the gate voltage. Capacitance behavior for different channel length is presented as a model and compared to measurement results and evaluations of energetic distributions of interface states Dit(phi sub s) for MOS transistor and MOS varactor on the same chip.

Fabrication of Capacitive Acoustic Resonators Combining 3D Printing and 2D Inkjet Printing Techniques

PubMed Central

Haque, Rubaiyet Iftekharul; Ogam, Erick; Loussert, Christophe; Benaben, Patrick; Boddaert, Xavier

2015-01-01

A capacitive acoustic resonator developed by combining three-dimensional (3D) printing and two-dimensional (2D) printed electronics technique is described. During this work, a patterned bottom structure with rigid backplate and cavity is fabricated directly by a 3D printing method, and then a direct write inkjet printing technique has been employed to print a silver conductive layer. A novel approach has been used to fabricate a diaphragm for the acoustic sensor as well, where the conductive layer is inkjet-printed on a pre-stressed thin organic film. After assembly, the resulting structure contains an electrically conductive diaphragm positioned at a distance from a fixed bottom electrode separated by a spacer. Measurements confirm that the transducer acts as capacitor. The deflection of the diaphragm in response to the incident acoustic single was observed by a laser Doppler vibrometer and the corresponding change of capacitance has been calculated, which is then compared with the numerical result. Observation confirms that the device performs as a resonator and provides adequate sensitivity and selectivity at its resonance frequency. PMID:26473878

The smallest quaternary ammonium salts with ether groups for high-performance electrochemical double layer capacitors† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c5sc02755a Click here for additional data file.

PubMed Central

Han, Taihee; Park, Min-Sik; Kim, Jeonghun; Kim, Jung Ho

2016-01-01

Electrochemical double layer capacitors (EDLCs) are energy storage devices that have been used for a wide range of electronic applications. In particular, the electrolyte is one of the important components, directly related to the capacitance and stability. Herein, we first report a series of the smallest quaternary ammonium salts (QASs), with ether groups on tails and tetrafluoroborate (BF4) as an anion, for use in EDLCs. To find the optimal structure, various QASs with different sized head groups and ether-containing tail groups were systematically compared. Comparing two nearly identical structures with and without ether groups, QASs with oxygen atoms showed improved capacitance, proving that ions with oxygen atoms move more easily than their counterparts at lower electric fields. Moreover, the ether containing QASs showed low activation energy values of conductivities, leading to smaller IR drops during the charge and discharge processes, resulting in an overall higher capacitance. PMID:28959391

Twistable and Stretchable Sandwich Structured Fiber for Wearable Sensors and Supercapacitors.

PubMed

Choi, Changsoon; Lee, Jae Myeong; Kim, Shi Hyeong; Kim, Seon Jeong; Di, Jiangtao; Baughman, Ray H

2016-12-14

Twistable and stretchable fiber-based electrochemical devices having high performance are needed for future applications, including emerging wearable electronics. Weavable fiber redox supercapacitors and strain sensors are here introduced, which comprise a dielectric layer sandwiched between functionalized buckled carbon nanotube electrodes. On the macroscopic scale, the sandwiched core rubber of the fiber acts as a dielectric layer for capacitive strain sensing and as an elastomeric substrate that prevents electrical shorting and irreversible structural changes during severe mechanical deformations. On the microscopic scale, the buckled CNT electrodes effectively absorb tensile or shear stresses, providing an essentially constant electrical conductance. Consequently, the sandwich fibers provide the dual functions of (1) strain sensing, by generating approximately 115.7% and 26% capacitance changes during stretching (200%) and giant twist (1700 rad·m -1 or 270 turns·m -1 ), respectively, and (2) electrochemical energy storage, providing high linear and areal capacitances (2.38 mF·cm -1 and 11.88 mF·cm -2 ) and retention of more than 95% of initial energy storage capability under large mechanical deformations.

Fabrication of SrTiO3 Layer on Pt Electrode for Label-Free Capacitive Biosensors

PubMed Central

Carapella, Giovanni; Pilloton, Roberto; Di Matteo, Marisa

2018-01-01

Due to their interesting ferroelectric, conductive and dielectric properties, in recent years, perovskite-structured materials have begun to attract increasing interest in the biosensing field. In this study, a strontium titanate perovskite layer (SrTiO3) has been synthesized on a platinum electrode and exploited for the development of an impedimetric label-free immunosensor for Escherichia coli O157:H7 detection. The electrochemical characterization of the perovskite-modified electrode during the construction of the immunosensor, as well as after the interaction with different E. coli O157:H7 concentrations, showed a reproducible decrease of the total capacitance of the system that was used for the analytical characterization of the immunosensor. Under optimized conditions, the capacitive immunosensor showed a linear relationship from to 1 to 7 log cfu/mL with a low detection limit of 1 log cfu/mL. Moreover, the atomic force microscopy (AFM) technique underlined the increase in roughness of the SrTiO3-modified electrode surface after antibody immobilization, as well as the effective presence of cells with the typical size of E. coli. PMID:29547521

Effects of surface chemical properties of activated carbon modified by amino-fluorination for electric double-layer capacitor.

PubMed

Jung, Min-Jung; Jeong, Euigyung; Cho, Seho; Yeo, Sang Young; Lee, Young-Seak

2012-09-01

The surface of phenol-based activated carbon (AC) was seriatim amino-fluorinated with solution of ammonium hydroxide and hydrofluoric acid in varying ratio to fabricate electrode materials for use in an electric double-layer capacitor (EDLC). The specific capacitance of the amino-fluorinated AC-based EDLC was measured in a 1 M H(2)SO(4) electrolyte, in which it was observed that the specific capacitances increased from 215 to 389 Fg(-1) and 119 and 250 Fg(-1) with the current densities of 0.1 and 1.0 Ag(-1), respectively, in comparison with those of an untreated AC-based EDLC when the amino-fluorination was optimized via seriatim mixed solution of 7.43 mol L(-1) ammonium hydroxide and 2.06 mol L(-1) hydrofluoric acid. This enhancement of capacitance was attributed to the synergistic effects of an increased electrochemical activity due to the formation of surface N- and F-functional groups and increased, specific surface area, and mesopore volumes, all of which resulted from the amino-fluorination of the electrode material. Copyright © 2012 Elsevier Inc. All rights reserved.

Hydrothermal synthesis of nanostructured graphene/polyaniline composites as high-capacitance electrode materials for supercapacitors

PubMed Central

Wang, Ronghua; Han, Meng; Zhao, Qiannan; Ren, Zonglin; Guo, Xiaolong; Xu, Chaohe; Hu, Ning; Lu, Li

2017-01-01

As known to all, hydrothermal synthesis is a powerful technique for preparing inorganic and organic materials or composites with different architectures. In this reports, by controlling hydrothermal conditions, nanostructured polyaniline (PANi) in different morphologies were composited with graphene sheets (GNS) and used as electrode materials of supercapacitors. Specifically, ultrathin PANi layers with total thickness of 10–20 nm are uniformly composited with GNS by a two-step hydrothermal-assistant chemical oxidation polymerization process; while PANi nanofibers with diameter of 50~100 nm are obtained by a one-step direct hydrothermal process. Benefitting from the ultrathin layer and porous structure, the sheet-like GNS/PANi composites can deliver specific capacitances of 532.3 to 304.9 F/g at scan rates of 2 to 50 mV/s. And also, this active material showed very good stability with capacitance retention as high as ~99.6% at scan rate of 50 mV/s, indicating a great potential for using in supercapacitors. Furthermore, the effects of hydrothermal temperatures on the electrochemical performances were systematically studied and discussed. PMID:28291246

Synthesis of NiMn-LDH Nanosheet@Ni3S2 Nanorod Hybrid Structures for Supercapacitor Electrode Materials with Ultrahigh Specific Capacitance.

PubMed

Yu, Shuai; Zhang, Yingxi; Lou, Gaobo; Wu, Yatao; Zhu, Xinqiang; Chen, Hao; Shen, Zhehong; Fu, Shenyuan; Bao, Binfu; Wu, Limin

2018-03-27

One of the key challenges for pseudocapacitive electrode materials with highly effective capacitance output and future practical applications is how to rationally construct hierarchical and ordered hybrid nanoarchitecture through the simple process. Herein, we design and synthesize a novel NiMn-layered double hydroxide nanosheet@Ni 3 S 2 nanorod hybrid array supported on porous nickel foam via a one-pot hydrothermal method. Benefited from the ultrathin and rough nature, the well-defined porous structure of the hybrid array, as well as the synergetic effect between NiMn-layered double hydroxide nanosheets and Ni 3 S 2 nanorods, the as-fabricated hybrid array-based electrode exhibits an ultrahigh specific capacitance of 2703 F g -1 at 3 A g -1 . Moreover, the asymmetric supercapacitor with this hybrid array as a positive electrode and wood-derived activated carbon as a negative electrode demonstrates high energy density (57 Wh Kg -1 at 738 W Kg -1 ) and very good electrochemical cycling stability.

High-surface-area nitrogen-doped reduced graphene oxide for electric double-layer capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong

A two-step method consisting of solid-state microwave irradiation and heat treatment under NH₃ gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007m²g⁻¹), high electrical conductivity (1532S m⁻¹), and low oxygen content (1.5 wt%) for electric double-layer capacitor applications. The specific capacitance of N-RGO was 291 Fg⁻¹ at a current density of 1 A g⁻¹, and a capacitance of 261 F g⁻¹ was retained at 50 A g⁻¹, indicating a very good rate capability. N-RGO also showed excellent cycling stability, preserving 96% of the initial specific capacitance after 100,000 cycles. Near-edge X-ray absorptionmore » fine-structure spectroscopy evidenced the recover of π-conjugation in the carbon networks with the removal of oxygenated groups and revealed the chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.« less

High-surface-area nitrogen-doped reduced graphene oxide for electric double-layer capacitors

DOE PAGES

Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; ...

2015-06-08

A two-step method consisting of solid-state microwave irradiation and heat treatment under NH₃ gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007m²g⁻¹), high electrical conductivity (1532S m⁻¹), and low oxygen content (1.5 wt%) for electric double-layer capacitor applications. The specific capacitance of N-RGO was 291 Fg⁻¹ at a current density of 1 A g⁻¹, and a capacitance of 261 F g⁻¹ was retained at 50 A g⁻¹, indicating a very good rate capability. N-RGO also showed excellent cycling stability, preserving 96% of the initial specific capacitance after 100,000 cycles. Near-edge X-ray absorptionmore » fine-structure spectroscopy evidenced the recover of π-conjugation in the carbon networks with the removal of oxygenated groups and revealed the chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.« less

Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications

NASA Technical Reports Server (NTRS)

Bishop, W.; Mattauch, R. J.

1990-01-01

The following accomplishments were made towards the goal of an optimized whiskerless diode chip for submillimeter wavelength applications. (1) Surface channel whiskerless diode structure was developed which offers excellent DC and RF characteristics, reduced shunt capacitance and simplified fabrication compared to mesa and proton isolated structures. (2) Reliable fabrication technology was developed for the surface channel structure. The new anode plating technology is a major improvement. (3) DC and RF characterization of the surface channel diode was compared with whisker contacted diodes. This data indicates electrical performance as good as the best reported for similar whisker contacted devices. (4) Additional batches of surface channel diodes were fabricated with excellent I-V and reduced shunt capacitance. (5) Large scale capacitance modelinng was done for the planar diode structure. This work revealed the importance of removing the substrate gallium arsenide for absolute minimum pad capacitance. (6) A surface channel diode was developed on quartz substrate and this substrate was completely removed after diode mounting for minimum parasitic capacitance. This work continues with the goal of producing excellent quality submillimeter wavelength planar diodes which satisfy the requirements of easy handling and robustness. These devices will allow the routine implementation of Schottky receivers into space-based applications at frequencies as high as 1 THz, and, in the future, beyond.

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

PubMed Central

Yan, Z. B.; Liu, J. -M.

2013-01-01

The Au/DyMnO3/Nb:SrTiO3/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 105 s, and the change ratio of resistance (or capacitance) is larger than 100 over the 108 switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO3/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO3/Nb:SrTiO3 stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device. PMID:23963467

Capacitive Micro Pressure Sensor Integrated with a Ring Oscillator Circuit on Chip

PubMed Central

Dai, Ching-Liang; Lu, Po-Wei; Chang, Chienliu; Liu, Cheng-Yang

2009-01-01

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0–300 kPa. PMID:22303167

Transparent and flexible electrodes and supercapacitors using polyaniline/single-walled carbon nanotube composite thin films

NASA Astrophysics Data System (ADS)

Ge, Jun; Cheng, Guanghui; Chen, Liwei

2011-08-01

Large-scale transparent and flexible electronic devices have been pursued for potential applications such as those in touch sensors and display technologies. These applications require that the power source of these devices must also comply with transparent and flexible features. Here we present transparent and flexible supercapacitors assembled from polyaniline (PANI)/single-walled carbon nanotube (SWNT) composite thin film electrodes. The ultrathin, optically homogeneous and transparent, electrically conducting films of the PANI/SWNT composite show a large specific capacitance due to combined double-layer capacitance and pseudo-capacitance mechanisms. A supercapacitor assembled using electrodes with a SWNT density of 10.0 µg cm-2 and 59 wt% PANI gives a specific capacitance of 55.0 F g-1 at a current density of 2.6 A g-1, showing its possibility for transparent and flexible energy storage.

Capacitive micro pressure sensor integrated with a ring oscillator circuit on chip.

PubMed

Dai, Ching-Liang; Lu, Po-Wei; Chang, Chienliu; Liu, Cheng-Yang

2009-01-01

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0-300 kPa.

Transparent and flexible electrodes and supercapacitors using polyaniline/single-walled carbon nanotube composite thin films.

PubMed

Ge, Jun; Cheng, Guanghui; Chen, Liwei

2011-08-01

Large-scale transparent and flexible electronic devices have been pursued for potential applications such as those in touch sensors and display technologies. These applications require that the power source of these devices must also comply with transparent and flexible features. Here we present transparent and flexible supercapacitors assembled from polyaniline (PANI)/single-walled carbon nanotube (SWNT) composite thin film electrodes. The ultrathin, optically homogeneous and transparent, electrically conducting films of the PANI/SWNT composite show a large specific capacitance due to combined double-layer capacitance and pseudo-capacitance mechanisms. A supercapacitor assembled using electrodes with a SWNT density of 10.0 µg cm(-2) and 59 wt% PANI gives a specific capacitance of 55.0 F g(-1) at a current density of 2.6 A g(-1), showing its possibility for transparent and flexible energy storage. This journal is © The Royal Society of Chemistry 2011

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

NASA Astrophysics Data System (ADS)

Lee, Hae-Min; Jeong, Gyoung Hwa; Kim, Sang-Wook; Kim, Chang-Koo

2017-04-01

Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2-5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

Capacitance Variation Induced by Microfluidic Two-Phase Flow across Insulated Interdigital Electrodes in Lab-On-Chip Devices

PubMed Central

Dong, Tao; Barbosa, Cátia

2015-01-01

Microfluidic two-phase flow detection has attracted plenty of interest in various areas of biology, medicine and chemistry. This work presents a capacitive sensor using insulated interdigital electrodes (IDEs) to detect the presence of droplets in a microchannel. This droplet sensor is composed of a glass substrate, patterned gold electrodes and an insulation layer. A polydimethylsiloxane (PDMS) cover bonded to the multilayered structure forms a microchannel. Capacitance variation induced by the droplet passage was thoroughly investigated with both simulation and experimental work. Olive oil and deionized water were employed as the working fluids in the experiments to demonstrate the droplet sensor. The results show a good sensitivity of the droplet with the appropriate measurement connection. This capacitive droplet sensor is promising to be integrated into a lab-on-chip device for in situ monitoring/counting of droplets or bubbles. PMID:25629705

Protective coatings for sensitive materials

DOEpatents

Egert, Charles M.

1997-01-01

An enhanced protective coating to prevent interaction between constituents of the environment and devices that can be damaged by those constituents. This coating is provided by applying a synergistic combination of diffusion barrier and physical barrier materials. These materials can be, for example, in the form of a plurality of layers of a diffusion barrier and a physical barrier, with these barrier layers being alternated. Further protection in certain instances is provided by including at least one layer of a getter material to actually react with one or more of the deleterious constituents. The coating is illustrated by using alternating layers of an organic coating (such as Parylene-C.TM.) as the diffusion barrier, and a metal coating (such as aluminum) as the physical barrier. For best results there needs to be more than one of at least one of the constituent layers.

Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

NASA Astrophysics Data System (ADS)

Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

2018-02-01

Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

Facile one-step synthesis of nanocomposite based on carbon nanotubes and Nickel-Aluminum layered double hydroxides with high cycling stability for supercapacitors.

PubMed

Bai, Caihui; Sun, Shiguo; Xu, Yongqian; Yu, Ruijin; Li, Hongjuan

2016-10-15

Nickel-Aluminum Layered Double Hydroxide (NiAl-LDH) and nanocomposite of Carbon Nanotubes (CNTs) and NiAl-LDH (CNTs/NiAl-LDH) were prepared by using a facile one-step homogeneous precipitation approach. The morphology, structure and electrochemical properties of the as-prepared CNTs/NiAl-LDH nanocomposite were then systematically studied. According to the galvanostatic charge-discharge curves, the CNTs/NiAl-LDH nanocomposite exhibited a high specific capacitance of 694Fg(-1) at the 1Ag(-1). Furthermore, the specific capacitance of the CNTs/NiAl-LDH nanocomposite still retained 87% when the current density was increased from 1 to 10Ag(-1). These results indicated that the CNTs/NiAl-LDH nanocomposite displayed a higher specific capacitance and rate capability than pure NiAl-LDH. And the participation of CNTs in the NiAl-LDH composite improved the electrochemical properties. Additionally, the capacitance of the CNTs/NiAl-LDH nanocomposite kept at least 92% after 3000cycles at 20Ag(-1), suggesting that the nanocomposite exhibited excellent cycling durability. This strategy provided a facile and effective approach for the synthesis of nanocomposite based on CNTs and NiAl-LDH with enhanced supercapacitor behaviors, which can be potentially applied in energy storage conversion devices. Copyright © 2016 Elsevier Inc. All rights reserved.

Gating capacitive field-effect sensors by the charge of nanoparticle/molecule hybrids.

PubMed

Poghossian, Arshak; Bäcker, Matthias; Mayer, Dirk; Schöning, Michael J

2015-01-21

The semiconductor field-effect platform is a powerful tool for chemical and biological sensing with direct electrical readout. In this work, the field-effect capacitive electrolyte-insulator-semiconductor (EIS) structure - the simplest field-effect (bio-)chemical sensor - modified with citrate-capped gold nanoparticles (AuNPs) has been applied for a label-free electrostatic detection of charged molecules by their intrinsic molecular charge. The EIS sensor detects the charge changes in AuNP/molecule inorganic/organic hybrids induced by the molecular adsorption or binding events. The feasibility of the proposed detection scheme has been exemplarily demonstrated by realizing capacitive EIS sensors consisting of an Al-p-Si-SiO2-silane-AuNP structure for the label-free detection of positively charged cytochrome c and poly-d-lysine molecules as well as for monitoring the layer-by-layer formation of polyelectrolyte multilayers of poly(allylamine hydrochloride)/poly(sodium 4-styrene sulfonate), representing typical model examples of detecting small proteins and macromolecules and the consecutive adsorption of positively/negatively charged polyelectrolytes, respectively. For comparison, EIS sensors without AuNPs have been investigated, too. The adsorption of molecules on the surface of AuNPs has been verified via the X-ray photoelectron spectroscopy method. In addition, a theoretical model of the functioning of the capacitive field-effect EIS sensor functionalized with AuNP/charged-molecule hybrids has been discussed.

LED structure with enhanced mirror reflectivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bergmann, Michael; Donofrio, Matthew; Heikman, Sten

2014-04-01

Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer andmore » adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region. In a further embodiment, the barrier layer is smaller than the mirror such that the periphery of the mirror is at least 40% free of the barrier layer, and the second contact is below the first contact and accessible from the bottom of the chip.« less

A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

NASA Astrophysics Data System (ADS)

Kaneko, Kentaro; Fujita, Shizuo; Hitora, Toshimi

2018-02-01

Corundum-structured oxides have been attracting much attention as next-generation power device materials. A corundum-structured α-Ga2O3 successfully demonstrated power device operations of Schottky barrier diodes (SBDs) with the lowest on-resistance of 0.1 mΩ cm2. The SBDs as a mounting device of TO220 also showed low switching-loss properties with a capacitance of 130 pF. Moreover, the thermal resistance was 13.9 °C/W, which is comparable to that of the SiC TO220 device (12.5 °C/W). On the other hand, corundum-structured α-(Rh,Ga)2O3 showed p-type conductivity, which was confirmed by Hall effect measurements. The Hall coefficient, carrier density, and mobility were 8.22 cm3/C, 7.6 × 1017/cm3, and 1.0 cm2 V-1 s-1, respectively. These values were acceptable for the p-type layer of pn diodes based on α-Ga2O3.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kimura, Tomoharu; Yamada, Hirofumi, E-mail: h-yamada@kuee.kyoto-u.ac.jp; Kobayashi, Kei

The device performances of organic thin film transistors are often limited by the metal–organic interface because of the disordered molecular layers at the interface and the energy barriers against the carrier injection. It is important to study the local impedance at the interface without being affected by the interface morphology. We combined frequency modulation atomic force microscopy with scanning impedance microscopy (SIM) to sensitively measure the ac responses of the interface to an ac voltage applied across the interface and the dc potential drop at the interface. By using the frequency-modulation SIM (FM-SIM) technique, we characterized the interface impedance ofmore » a Pt electrode and a single pentacene grain as a parallel circuit of a contact resistance and a capacitance. We found that the reduction of the contact resistance was caused by the reduction of the energy level mismatch at the interface by the FM-SIM measurements, demonstrating the usefulness of the FM-SIM technique for investigation of the local interface impedance without being affected by its morphology.« less

Ocean barrier layers' effect on tropical cyclone intensification.

PubMed

Balaguru, Karthik; Chang, Ping; Saravanan, R; Leung, L Ruby; Xu, Zhao; Li, Mingkui; Hsieh, Jen-Shan

2012-09-04

Improving a tropical cyclone's forecast and mitigating its destructive potential requires knowledge of various environmental factors that influence the cyclone's path and intensity. Herein, using a combination of observations and model simulations, we systematically demonstrate that tropical cyclone intensification is significantly affected by salinity-induced barrier layers, which are "quasi-permanent" features in the upper tropical oceans. When tropical cyclones pass over regions with barrier layers, the increased stratification and stability within the layer reduce storm-induced vertical mixing and sea surface temperature cooling. This causes an increase in enthalpy flux from the ocean to the atmosphere and, consequently, an intensification of tropical cyclones. On average, the tropical cyclone intensification rate is nearly 50% higher over regions with barrier layers, compared to regions without. Our finding, which underscores the importance of observing not only the upper-ocean thermal structure but also the salinity structure in deep tropical barrier layer regions, may be a key to more skillful predictions of tropical cyclone intensities through improved ocean state estimates and simulations of barrier layer processes. As the hydrological cycle responds to global warming, any associated changes in the barrier layer distribution must be considered in projecting future tropical cyclone activity.

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Layer-by-layer assembly of MXene and carbon nanotubes on electrospun polymer films for flexible energy storage.

PubMed

Zhou, Zehang; Panatdasirisuk, Weerapha; Mathis, Tyler S; Anasori, Babak; Lu, Canhui; Zhang, Xinxing; Liao, Zhiwei; Gogotsi, Yury; Yang, Shu

2018-03-29

Free-standing, highly flexible and foldable supercapacitor electrodes were fabricated through the spray-coating assisted layer-by-layer assembly of Ti3C2Tx (MXene) nanoflakes together with multi-walled carbon nanotubes (MWCNTs) on electrospun polycaprolactone (PCL) fiber networks. The open structure of the PCL network and the use of MWCNTs as spacers not only limit the restacking of Ti3C2Tx flakes but also increase the accessible surface of the active materials, facilitating fast diffusion of electrolyte ions within the electrode. Composite electrodes have areal capacitance (30-50 mF cm-2) comparable to other templated electrodes reported in the literature, but showed significantly improved rate performance (14-16% capacitance retention at a scan rate of 100 V s-1). Furthermore, the composite electrodes are flexible and foldable, demonstrating good tolerance against repeated mechanical deformation, including twisting and folding. Therefore, these tens of micron thick fiber electrodes will be attractive for applications in energy storage, electroanalytical chemistry, brain electrodes, electrocatalysis and other fields, where flexible freestanding electrodes with an open and accessible surface are highly desired.

Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application

NASA Astrophysics Data System (ADS)

Lee, Sang-Yun; Kim, Hyoungsub; McIntyre, Paul C.; Saraswat, Krishna C.; Byun, Jeong-Soo

2003-04-01

A metal-insulator-metal (MIM) capacitor using ZrO2 on tungsten (W) metal bottom electrode was demonstrated and characterized in this letter. Both ZrO2 and W metal were synthesized by an atomic layer deposition (ALD) method. High-quality 110˜115 Å ZrO2 films were grown uniformly on ALD W using ZrCl4 and H2O precursors at 300 °C, and polycrystalline ZrO2 in the ALD regime could be obtained. A 13˜14-Å-thick interfacial layer between ZrO2 and W was observed after fabrication, and it was identified as WOx through angle-resolved x-ray photoelectron spectroscopy analysis with wet chemical etching. The apparent equivalent oxide thickness was 20˜21 Å. An effective dielectric constant of 22˜25 including an interfacial WOx layer was obtained by measuring capacitance and thickness of MIM capacitors with Pt top electrodes. High capacitance per area (16˜17 fF/μm2) and low leakage current (10-7 A/cm2 at ±1 V) were achieved.

Self-Healing Polymer Dielectric for a High Capacitance Gate Insulator.

PubMed

Ko, Jieun; Kim, Young-Jae; Kim, Youn Sang

2016-09-14

Self-healing materials are required for development of various flexible electronic devices to repair cracks and ruptures caused by repetitive bending or folding. Specifically, a self-healing dielectric layer has huge potential to achieve healing electronics without mechanical breakdown in flexible operations. Here, we developed a high performance self-healing dielectric layer with an ionic liquid and catechol-functionalized polymer which exhibited a self-healing ability for both bulk and film states under mild self-healing conditions at 55 °C for 30 min. Due to the sufficient ion mobility of the ionic liquid in the polymer matrix, it had a high capacitance value above 1 μF/cm(2) at 20 Hz. Moreover, zinc oxide (ZnO) thin-film transistors (TFTs) with a self-healing dielectric layer exhibited a high field-effect mobility of 16.1 ± 3.07 cm(2) V(-1) s(-1) at a gate bias of 3 V. Even after repetitive self-healing of the dielectric layer from mechanical breaking, the electrical performance of the TFTs was well-maintained.

Photoluminescence and capacitance voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

NASA Astrophysics Data System (ADS)

Anantathanasarn, Sanguan; Hasegawa, Hideki

2002-05-01

A novel surface passivation technique for GaAs using an ultrathin GaN interface control layer (GaN ICL) formed by surface nitridation was characterized by ultrahigh vacuum (UHV) photoluminescence (PL) and capacitance-voltage ( C- V) measurements. The PL quantum efficiency was dramatically enhanced after being passivated by the GaN ICL structure, reaching as high as 30 times of the initial clean GaAs surface. Further analysis of PL data was done by the PL surface state spectroscopy (PLS 3) simulation technique. PL and C- V results are in good agreement indicating that ultrathin GaN ICL reduces the gap states and unpins the Fermi level, realizing a wide movement of Fermi level within the midgap region and reduction of the effective surface recombination velocity by a factor of 1/60. GaN layer also introduced a large negative surface fixed charge of about 10 12 cm -2. A further improvement took place by depositing a Si 3N 4 layer on GaN ICL/GaAs structure.

Thermal barriers for compartments

DOEpatents

Kreutzer, Cory J.; Lustbader, Jason A.

2017-10-17

An aspect of the present disclosure is a thermal barrier that includes a core layer having a first surface, a second surface, and a first edge, and a first outer layer that includes a third surface and a second edge, where the third surface substantially contacts the first surface, the core layer is configured to minimize conductive heat transfer through the barrier, and the first outer layer is configured to maximize reflection of light away from the barrier.

Nanocrystalline LaOx/NiO composite as high performance electrodes for supercapacitors.

PubMed

Du, Guo; Zeng, Zifan; Xiao, Bangqing; Wang, Dengzhi; Yuan, Yuan; Zhu, Xiaohong; Zhu, Jiliang

2017-12-21

Nanocrystalline LaO x /NiO composite electrodes were synthesized via two types of facile cathodic electrodeposition methods onto nickel foam followed by thermal annealing without any binders. Scanning electron microscopy and transmission electron microscopy investigation revealed that LaO x nanocrystalline particles with an average diameter of 50 nm are uniformly distributed in the NiO layer or alternately deposited with the NiO layer onto the substrate. It is speculated that LaO x particles can participate in the faradaic reaction directly and offer more redox sites. Besides this, the unique Ni/La layered structure facilitates the diffusion of ions and retards the electrode polarization, thus leading to a better rate capability and cycling stability of NiO. As a result, the obtained electrodes display very competitive electrochemical performance (a specific capacitance of 1238 F g -1 at a current density of 0.5 A g -1 , excellent rate capability of 86% of the original capacitance at 10 A g -1 and excellent cycling stability of 93% capacitance after 10 000 cycles). In addition, asymmetric coin devices were assembled using LaO x /NiO as the positive electrode and active carbon as the negative electrode. The assembled asymmetric devices demonstrate a high energy density of 13.12 W h kg -1 at a power density of 90.72 W kg -1 .

Electrochemical performance of microporous and mesoporous activated carbons in neat and diluted 1-ethyl-3-methylimidazolium tetrafluoroborate

NASA Astrophysics Data System (ADS)

Kumagai, Seiji; Hatomi, Masaki; Tashima, Daisuke

2017-03-01

1-Ethyl-3-methylimidazolium tetrafluoroborate (EMIm·BF4), neat and diluted with propylene carbonate to 1 mol L-1, have been employed as electrolytes of electrical double-layer capacitors (EDLCs). The effects of microporosity and mesoporosity in activated carbon (AC) electrodes on the capacitive and resistive performances upon the use of neat and diluted EMIm·BF4 have been explored. In addition to cyclic voltammetry and galvanostatic charge-discharge tests, electrochemical impedance spectroscopy has been performed employing Kang's equivalent circuit model consisting of three resistances, three constant phase elements, and one bounded Warburg impedance. The overall impedance of the EDLC cell was separated into components of intrinsic resistance, bulk electrolyte, diffusion layer, and Helmholtz layer. The specific capacitance and the equivalent series resistance (ESR) of mesoporous AC were found to be highly dependent on the rate of ionic transfer. Lower cell voltage was identified as being responsible for lower specific capacitance and larger ESR of mesoporous AC, which was similarly seen in the neat and diluted EMIm·BF4, and could be alleviated by increasing the cell voltage. The inferior rate performance and the cell-voltage-dependent performance of mesoporous AC, which were more distinctly observed in the neat EMIm·BF4, could be attributed to the lower mobility of EMIm+ and BF4- in mesopores.

Characterisation of capacitive field-effect sensors with a nanocrystalline-diamond film as transducer material for multi-parameter sensing.

PubMed

Abouzar, M H; Poghossian, A; Razavi, A; Williams, O A; Bijnens, N; Wagner, P; Schöning, M J

2009-01-01

The feasibility of a capacitive field-effect EDIS (electrolyte-diamond-insulator-semiconductor) platform for multi-parameter sensing is demonstrated by realising EDIS sensors with an O-terminated nanocrystalline-diamond (NCD) film as transducer material for the detection of pH and penicillin concentration as well as for the label-free electrical monitoring of adsorption and binding of charged macromolecules, like polyelectrolytes. The NCD films were grown on p-Si-SiO(2) substrates by microwave plasma-enhanced chemical vapour deposition. To obtain O-terminated surfaces, the NCD films were treated in an oxidising medium. The NCD-based field-effect sensors have been characterised by means of constant-capacitance method. The average pH sensitivity of the O-terminated NCD film was 40 mV/pH. A low detection limit of 5 microM and a high penicillin G sensitivity of 65-70 mV/decade has been obtained for an EDIS penicillin biosensor with the adsorptively immobilised enzyme penicillinase. Alternating potential changes, having tendency to decrease with increasing the number of adsorbed polyelectrolyte layers, have been observed after the layer-by-layer deposition of polyelectrolyte multilayers, using positively charged PAH (poly (allylamine hydrochloride)) and a negatively charged PSS (poly (sodium 4-styrene sulfonate)) as a model system. The response mechanism of the developed EDIS sensors is discussed.

Quantitative characterization of material surface — Application to Ni + Mo electrolytic composite coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kubisztal, J., E-mail: julian.kubisztal@us.edu.pl

A new approach to numerical analysis of maps of material surface has been proposed and discussed in detail. It was concluded that the roughness factor RF and the root mean square roughness S{sub q} show a saturation effect with increasing size of the analysed maps what allows determining the optimal map dimension representative of the examined material. A quantitative method of determining predominant direction of the surface texture based on the power spectral density function is also proposed and discussed. The elaborated method was applied in surface analysis of Ni + Mo composite coatings. It was shown that co-deposition ofmore » molybdenum particles in nickel matrix leads to an increase in surface roughness. In addition, a decrease in size of the embedded Mo particles in Ni matrix causes an increase of both the surface roughness and the surface texture. It was also stated that the relation between the roughness factor and the double layer capacitance C{sub dl} of the studied coatings is linear and allows determining the double layer capacitance of the smooth nickel electrode. - Highlights: •Optimization of the procedure for the scanning of the material surface •Quantitative determination of the surface roughness and texture intensity •Proposition of the parameter describing privileged direction of the surface texture •Determination of the double layer capacitance of the smooth electrode.« less

Cellulose Derived Graphenic Fibers for Capacitive Desalination of Brackish Water.

PubMed

Pugazhenthiran, Nalenthiran; Sen Gupta, Soujit; Prabhath, Anupama; Manikandan, Muthu; Swathy, Jakka Ravindran; Raman, V Kalyan; Pradeep, Thalappil

2015-09-16

We describe a simple and inexpensive cellulose-derived and layer-by-layer stacked carbon fiber network electrode for capacitive deionization (CDI) of brackish water. The microstructure and chemical composition were characterized using spectroscopic and microscopic techniques; electrochemical/electrical performance was evaluated by cyclic voltammetry and 4-probe electrical conductivity and surface area by Brunauer-Emmett-Teller analysis, respectively. The desalination performance was investigated using a laboratory batch model CDI unit, under fixed applied voltage and varying salt concentrations. Electro-adsorption of NaCl on the graphite reinforced-cellulose (GrC) electrode reached equilibrium quickly (within 90 min) and the adsorbed salts were released swiftly (in 40 min) back into the solution, during reversal of applied potential. X-ray photoelectron spectroscopic studies clearly illustrate that sodium and chloride ions were physisorbed on the negative and positive electrodes, respectively during electro-adsorption. This GrC electrode showed an electro-adsorption capacity of 13.1 mg/g of the electrode at a cell potential of 1.2 V, with excellent recyclability and complete regeneration. The electrode has a high tendency for removal of specific anions, such as fluoride, nitrate, chloride, and sulfate from water in the following order: Cl->NO3->F->SO4(2-). GrC electrodes also showed resistance to biofouling with negligible biofilm formation even after 5 days of incubation in Pseudomonas putida bacterial culture. Our unique cost-effective methodology of layer-by-layer stacking of carbon nanofibers and concurrent reinforcement using graphite provides uniform conductivity throughout the electrode with fast electro-adsorption, rapid desorption, and extended reuse, making the electrode affordable for capacitive desalination of brackish water.

60 GHz Tapered Transmission Line Resonators

DTIC Science & Technology

2008-09-15

and out small capacitors, using varactors for part of the capacitance, or both. However, at high frequencies the size of these lumped components...the full substrate stack is made up of many oxide layers with different EM characteristics. To speed up simulation time it is imperative to simplify...the substrate stackup dramatically. This was achieved by using only one oxide layer which encompasses all metal layers. The character- istics of this

Protective coatings for sensitive materials

DOEpatents

Egert, C.M.

1997-08-05

An enhanced protective coating is disclosed to prevent interaction between constituents of the environment and devices that can be damaged by those constituents. This coating is provided by applying a synergistic combination of diffusion barrier and physical barrier materials. These materials can be, for example, in the form of a plurality of layers of a diffusion barrier and a physical barrier, with these barrier layers being alternated. Further protection in certain instances is provided by including at least one layer of a getter material to actually react with one or more of the deleterious constituents. The coating is illustrated by using alternating layers of an organic coating (such as Parylene-C{trademark}) as the diffusion barrier, and a metal coating (such as aluminum) as the physical barrier. For best results there needs to be more than one of at least one of the constituent layers. 4 figs.

Impedance analysis of PbS colloidal quantum dot solar cells with different ZnO nanowire lengths

NASA Astrophysics Data System (ADS)

Fukuda, Takeshi; Takahashi, Akihiro; Wang, Haibin; Takahira, Kazuya; Kubo, Takaya; Segawa, Hiroshi

2018-03-01

The photoconversion efficiency of colloidal quantum dot (QD) solar cells has been markedly improved by optimizing the surface passivation and device structure, and details of device physics are now under investigation. In this study, we investigated the resistance and capacitance components at the ZnO/PbS-QD interface and inside a PbS-QD layer by measuring the impedance spectrum while the interface area was controlled by changing the ZnO nanowire length. By evaluating the dependence of optical intensity and DC bias voltage on the ZnO nanowire length, only the capacitance was observed to be influenced by the interface area, and this indicates that photoinduced carriers are generated at the surface of PbS-QD. In addition, since the capacitance is proportional to the surface area of the QD, the interface area can be evaluated from the capacitance. Finally, photovoltaic performance was observed to increase with increasing ZnO nanowire length owing to the large interface area, and this result is in good agreement with the capacitance measurement.

In situ self-sacrificed template synthesis of vanadium nitride/nitrogen-doped graphene nanocomposites for electrochemical capacitors.

PubMed

Liu, Hong-Hui; Zhang, Hong-Ling; Xu, Hong-Bin; Lou, Tai-Ping; Sui, Zhi-Tong; Zhang, Yi

2018-03-15

Vanadium nitride and graphene have been widely used as pseudo-capacitive and electric double-layer capacitor electrode materials for electrochemical capacitors, respectively. However, the poor cycling stability of vanadium nitride and the low capacitance of graphene impeded their practical applications. Herein, we demonstrated an in situ self-sacrificed template method for the synthesis of vanadium nitride/nitrogen-doped graphene (VN/NGr) nanocomposites by the pyrolysis of a mixture of dicyandiamide, glucose, and NH 4 VO 3 . Vanadium nitride nanoparticles of the size in the range of 2 to 7 nm were uniformly embedded into the nitrogen-doped graphene skeleton. Furthermore, the VN/NGr nanocomposites with a high specific surface area and pore volume showed a high specific capacitance of 255 F g -1 at 10 mV s -1 , and an excellent cycling stability (94% capacitance retention after 2000 cycles). The excellent capacitive properties were ascribed to the excellent conductivity of nitrogen-doped graphene, high surface area, high pore volume, and the synergistic effect between vanadium nitride and nitrogen-doped graphene.

Integrated on-chip solid state capacitor based on vertically aligned carbon nanofibers, grown using a CMOS temperature compatible process

NASA Astrophysics Data System (ADS)

Saleem, Amin M.; Andersson, Rickard; Desmaris, Vincent; Enoksson, Peter

2018-01-01

Complete miniaturized on-chip integrated solid-state capacitors have been fabricated based on conformal coating of vertically aligned carbon nanofibers (VACNFs), using a CMOS temperature compatible microfabrication processes. The 5 μm long VACNFs, operating as electrode, are grown on a silicon substrate and conformally coated by aluminum oxide dielectric using atomic layer deposition (ALD) technique. The areal (footprint) capacitance density value of 11-15 nF/mm2 is realized with high reproducibility. The CMOS temperature compatible microfabrication, ultra-low profile (less than 7 μm thickness) and high capacitance density would enables direct integration of micro energy storage devices on the active CMOS chip, multi-chip package and passives on silicon or glass interposer. A model is developed to calculate the surface area of VACNFs and the effective capacitance from the devices. It is thereby shown that 71% of surface area of the VACNFs has contributed to the measured capacitance, and by using the entire area the capacitance can potentially be increased.

Gas sensor with attenuated drift characteristic

DOEpatents

Chen, Ing-Shin [Danbury, CT; Chen, Philip S. H. [Bethel, CT; Neuner, Jeffrey W [Bethel, CT; Welch, James [Fairfield, CT; Hendrix, Bryan [Danbury, CT; Dimeo, Jr., Frank [Danbury, CT

2008-05-13

A sensor with an attenuated drift characteristic, including a layer structure in which a sensing layer has a layer of diffusional barrier material on at least one of its faces. The sensor may for example be constituted as a hydrogen gas sensor including a palladium/yttrium layer structure formed on a micro-hotplate base, with a chromium barrier layer between the yttrium layer and the micro-hotplate, and with a tantalum barrier layer between the yttrium layer and an overlying palladium protective layer. The gas sensor is useful for detection of a target gas in environments susceptible to generation or incursion of such gas, and achieves substantial (e.g., >90%) reduction of signal drift from the gas sensor in extended operation, relative to a corresponding gas sensor lacking the diffusional barrier structure of the invention

Layered storage of biogenic methane-enriched gas bubbles in peat: A lumped capacitance model controlled by soil structure

NASA Astrophysics Data System (ADS)

Chen, X.; Comas, X.; Binley, A. M.; Slater, L. D.

2017-12-01

Methane can accumulate in the gaseous phase in peats, and enter the atmosphere as gas bubbles with a mass flux higher than that via diffusion and plant-mediated pathways. A complete understanding of the mechanisms regulating bubble storage in peats remains incomplete. We developed a layered model to quantify the storage of gas bubbles over a peat column based on a general lumped capacitance model. This conceptual model was applied to explain the effects of peat structure on bubble storage at different depths observed in a laboratory experiment. A peat monolith was collected from the Everglades, a subtropical wetland located in Florida (USA), and kept submerged in a cuboid chamber over 102 days until gas bubble saturation was achieved. Time-lapse ground-penetrating radar (GPR) was used to estimate changes in gas content of each layer and the corresponding average dimensions of stored gas bubbles. The results highlight a hotspot layer of bubble accumulation at depths between 5 and 10 cm below the monolith surface. Bubbles in this shallow hotspot layer were larger relative to those in deeper layers, whilst the degree of decomposition of the upper layers was generally smaller than that of the lower layers based on von Post humification tests. X-ray Computer tomography (CT) was applied to resin-impregnated peat sections from different depths and the results showed that a higher porosity promotes bubbles storage. The stored gas bubbles were released by changing water levels and the air CH4 concentrations above the peat monolith were measured using a flow-through chamber system to confirm the high CH4 concentration in the stored bubbles. Our findings suggest that bubble capacitance is related to the difference in size between gas bubbles and peat pores. This work has implications for better understanding how changes in water table elevation associated with climate change and sea level rise (particularly for freshwater wetlands near coastal areas like the Everglades) may potentially alter bubble sizes, thus bubble storage in peats.

Molecular physics of electrical double layers in electrochemical capacitors

NASA Astrophysics Data System (ADS)

Feng, Guang

At present, electrochemical capacitors (ECs) are emerging as a novel type of energy storage devices and have attracted remarkable attention, due to their key characteristics, such as high power density and excellent durability. However, the moderate energy density of ECs restricts their widespread deployment in everyday technology. To surmount this limitation, four strategies are adopted: (1) to reduce the total system mass, (2) to increase the specific surface area of electrodes, (3) to enhance normalized capacitance, and (4) to expand the range of potentials applied on electrodes. The implementation of these approaches critically relies on the fundamental understanding of physical processes underlying the energy storage mechanisms hinging on the electrical double layers (EDLs) in ECs. In this dissertation, to gain the fundamentals of EDLs in ECs, based on the strategies described above, we studied the structure, capacitance, and dynamics of EDLs in different electrolytes near electrodes featuring different pores using atomistic simulations. The pores of electrodes are categorized into macropores, mesopores, and micropores, following the decreasing order of pore size. The chosen electrolytes fall into aqueous electrolytes, organic electrolytes, and ionic liquids (ILs), listed by the increasing order of their decomposition voltages. For the aqueous electrolytes, we explored the water and ion distributions inside electrified micropores (< 2nm) using molecular dynamics (MD) simulations. The results showed that the ion distribution differs qualitatively from that described by classical EDL theories. Based on such exceptional phenomenon, a new sandwich capacitance model was developed to describe the EDLs inside micropores, which is capable of predicting the sharp increase of capacitance that has been experimentally observed in micropores. For the organic electrolytes, we examined the ion solvation and the EDL structure, capacitance, and dynamics in the electrolyte of tetraethylammonium tetrafluoroborate (TEABF4) in the aprotic solvent of acetonitrile (ACN). Firstly, the solvation of TEA+ and BF4 - ions is found to be much weaker than that of small inorganic ions. This characteristic accounts for the rich structure of EDLs near the electrodes. In particular, near charged electrodes, the ion distribution cannot be explained by the traditional EDL models. Secondly, the computed capacitances of EDLs agree well with those inferred from experimental measurements. Finally, we probed the dynamics of EDLs in organic electrolytes by analyzing the rotational dynamics of solvent and the self diffusion coefficients of ion/solvent. For the ILs, we performed the MD simulations of EDLs at the interface between an IL of 1-butyl-3-methylimidazolium nitrate ([BMIM][NO3]) and planar electrodes. The results revealed that the structure of the EDL is significantly affected by the liquid nature of the IL, the short-range ion--electrode and ion--ion interactions, and the charge delocalization of ions. We showed that the differential capacitance is a quantitative measure of the response of the EDL structure to a change of electrode surface charge density, and the concave-shaped capacitance--potential (C--V ) curve is in good agreement with that in the literature. To further acquire the theoretical understanding of EDLs in ILs, we investigated the effects of ion size and electrode curvature on the EDLs in ILs of 1-butyl-3-methylimidazolium chloride ([BMIM][Cl]) and 1-butyl-3-methylimidazolium hexafluorophosphate ([BMIM][PF6]). The results indicated that the ion size considerably affects the ion distribution and orientational structure of EDLs, and the EDL capacitances follow a certain order of the ion size. It was also found that the EDL capacitance increases as the electrode curvature increases. Based on the insights gained from the EDL structure and capacitance, a "Multiple Ion Layers with Overscreening" (MILO) model was proposed for EDLs in ILs. The capacitance predicted by the MILO model agrees well with that computed from the MD simulation.

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

NASA Astrophysics Data System (ADS)

Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

2015-09-01

The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

Ultrahigh-rate supercapacitors with large capacitance based on edge oriented graphene coated carbonized cellulous paper as flexible freestanding electrodes

NASA Astrophysics Data System (ADS)

Ren, Guofeng; Li, Shiqi; Fan, Zhao-Xia; Hoque, Md Nadim Ferdous; Fan, Zhaoyang

2016-09-01

Large-capacitance and ultrahigh-rate electrochemical supercapacitors (UECs) with frequency response up to kilohertz (kHz) range are reported using light, thin, and flexible freestanding electrodes. The electrode is formed by perpendicularly edge oriented multilayer graphene/thin-graphite (EOG) sheets grown radially around individual fibers in carbonized cellulous paper (CCP), with cellulous carbonization and EOG deposition implemented in one step. The resulted ∼10 μm thick EOG/CCP electrode is light and flexible. The oriented porous structure of EOG with large surface area, in conjunction with high conductivity of the electrode, ensures ultrahigh-rate performance of the fabricated cells, with large areal capacitance of 0.59 mF cm-2 and 0.53 mF cm-2 and large phase angle of -83° and -80° at 120 Hz and 1 kHz, respectively. Particularly, the hierarchical EOG/CCP sheet structure allows multiple sheets stacked together for thick electrodes with almost linearly increased areal capacitance while maintaining the volumetric capacitance nearly no degradation, a critical merit for developing practical faraday-scale UECs. 3-layers of EOG/CCP electrode achieved an areal capacitance of 1.5 mF cm-2 and 1.4 mF cm-2 at 120 Hz and 1 kHz, respectively. This demonstration moves a step closer to the goal of bridging the frequency/capacitance gap between supercapacitors and electrolytic capacitors.

Synergistic interaction between pseudocapacitive Fe3O4 nanoparticles and highly porous silicon carbide for high-performance electrodes as electrochemical supercapacitors

NASA Astrophysics Data System (ADS)

Kim, Myeongjin; Kim, Jooheon

2017-05-01

Composites of micro- and mesoporous SiC flakes (SiCF) and ferroferric oxide (Fe3O4), SiCF/Fe3O4, were prepared via the chemical deposition of Fe3O4 on SiCF by the chemical reduction of an Fe precursor. The SiCF/Fe3O4 electrodes were fabricated at different Fe3O4 feeding ratios to determine the optimal Fe3O4 content that can maintain a high total surface area of SiCF/Fe3O4 composites as well as cause a vigorous redox reaction, thereby maximizing the synergistic effect between the electric double-layer capacitive effects of SiCF and the pseudo-capacitive effects of Fe3O4. The SiCF/Fe3O4 electrode fabricated with a Fe3O4/SiCF feeding ratio of 1.5:1 (SiCF/Fe3O4(1.5)) exhibited the highest charge storage capacity, showing a specific capacitance of 423.2 F g-1 at a scan rate of 5 mV s-1 with a rate performance of 81.8% from 5 to 500 mV s-1 in an aqueous 1 M KOH electrolyte. The outstanding capacitive performance of the SiCF/Fe3O4(1.5) electrode could be attributed to the harmonious synergistic effect between the electric double-layer capacitive contribution of the SiCF and the pseudocapacitive contribution of the Fe3O4 nanoparticles introduced on the SiCF surface. These encouraging results demonstrate that the SiCF/Fe3O4(1.5) electrode is a promising high-performance electrode material for use in supercapacitors.

High-Capacitance Mechanism for Ti3C2Tx MXene by in Situ Electrochemical Raman Spectroscopy Investigation.

PubMed

Hu, Minmin; Li, Zhaojin; Hu, Tao; Zhu, Shihao; Zhang, Chao; Wang, Xiaohui

2016-12-27

MXenes represent an emerging family of conductive two-dimensional materials. Their representative, Ti 3 C 2 T x , has been recognized as an outstanding member in the field of electrochemical energy storage. However, an in-depth understanding of fundamental processes responsible for the superior capacitance of Ti 3 C 2 T x MXene in acidic electrolytes is lacking. Here, to understand the mechanism of capacitance in Ti 3 C 2 T x MXene, we studied electrochemically the charge/discharge processes of Ti 3 C 2 T x electrodes in sulfate ion-containing aqueous electrolytes with three different cations, coupled with in situ Raman spectroscopy. It is demonstrated that hydronium in the H 2 SO 4 electrolyte bonds with the terminal O in the negative electrode upon discharging while debonding occurs upon charging. Correspondingly, the reversible bonding/debonding changes the valence state of Ti element in the MXene, giving rise to the pseudocapacitance in the acidic electrolyte. In stark contrast, only electric double layer capacitance is recognized in the other electrolytes of (NH 4 ) 2 SO 4 or MgSO 4 . The charge storage ways also differ: ion exchange dominates in H 2 SO 4 , while counterion adsorption in the rest. Hydronium that is characterized by smaller hydration radius and less charge is the most mobile among the three cations, facilitating it more kinetically accommodated on the deep adsorption sites between the MXene layers. The two key factors, i.e., surface functional group-involved bonding/debonding-induced pseudocapacitance, and ion exchange-featured charge storage, simultaneously contribute to the superior capacitance of Ti 3 C 2 T x MXene in acidic electrolytes.

Synergistic interaction between pseudocapacitive Fe3O4 nanoparticles and highly porous silicon carbide for high-performance electrodes as electrochemical supercapacitors.

PubMed

Kim, Myeongjin; Kim, Jooheon

2017-05-12

Composites of micro- and mesoporous SiC flakes (SiCF) and ferroferric oxide (Fe 3 O 4 ), SiCF/Fe 3 O 4 , were prepared via the chemical deposition of Fe 3 O 4 on SiCF by the chemical reduction of an Fe precursor. The SiCF/Fe 3 O 4 electrodes were fabricated at different Fe 3 O 4 feeding ratios to determine the optimal Fe 3 O 4 content that can maintain a high total surface area of SiCF/Fe 3 O 4 composites as well as cause a vigorous redox reaction, thereby maximizing the synergistic effect between the electric double-layer capacitive effects of SiCF and the pseudo-capacitive effects of Fe 3 O 4 . The SiCF/Fe 3 O 4 electrode fabricated with a Fe 3 O 4 /SiCF feeding ratio of 1.5:1 (SiCF/Fe 3 O 4 (1.5)) exhibited the highest charge storage capacity, showing a specific capacitance of 423.2 F g -1 at a scan rate of 5 mV s -1 with a rate performance of 81.8% from 5 to 500 mV s -1 in an aqueous 1 M KOH electrolyte. The outstanding capacitive performance of the SiCF/Fe 3 O 4 (1.5) electrode could be attributed to the harmonious synergistic effect between the electric double-layer capacitive contribution of the SiCF and the pseudocapacitive contribution of the Fe 3 O 4 nanoparticles introduced on the SiCF surface. These encouraging results demonstrate that the SiCF/Fe 3 O 4 (1.5) electrode is a promising high-performance electrode material for use in supercapacitors.

Determination of Surface Potential and Electrical Double-Layer Structure at the Aqueous Electrolyte-Nanoparticle Interface

NASA Astrophysics Data System (ADS)

Brown, Matthew A.; Abbas, Zareen; Kleibert, Armin; Green, Richard G.; Goel, Alok; May, Sylvio; Squires, Todd M.

2016-01-01

The structure of the electrical double layer has been debated for well over a century, since it mediates colloidal interactions, regulates surface structure, controls reactivity, sets capacitance, and represents the central element of electrochemical supercapacitors. The surface potential of such surfaces generally exceeds the electrokinetic potential, often substantially. Traditionally, a Stern layer of nonspecifically adsorbed ions has been invoked to rationalize the difference between these two potentials; however, the inability to directly measure the surface potential of dispersed systems has rendered quantitative measurements of the Stern layer potential, and other quantities associated with the outer Helmholtz plane, impossible. Here, we use x-ray photoelectron spectroscopy from a liquid microjet to measure the absolute surface potentials of silica nanoparticles dispersed in aqueous electrolytes. We quantitatively determine the impact of specific cations (Li+ , Na+ , K+ , and Cs+ ) in chloride electrolytes on the surface potential, the location of the shear plane, and the capacitance of the Stern layer. We find that the magnitude of the surface potential increases linearly with the hydrated-cation radius. Interpreting our data using the simplest assumptions and most straightforward understanding of Gouy-Chapman-Stern theory reveals a Stern layer whose thickness corresponds to a single layer of water molecules hydrating the silica surface, plus the radius of the hydrated cation. These results subject electrical double-layer theories to direct and falsifiable tests to reveal a physically intuitive and quantitatively verified picture of the Stern layer that is consistent across multiple electrolytes and solution conditions.

Investigation on VOX/CNTS Nanocomposites Act as Electrode of Supercapacitors

NASA Astrophysics Data System (ADS)

Zhu, Quanyao; Li, Zhaolong; Zhang, Xiaoyan; Huang, Shengnan; Yu, Yue; Chen, Wen; Zakharova, Galina S.

2013-07-01

The VOx/CNTs nanocomposites were synthesized by the hydrothermal method. The structure and morphologies of the nanocomposites were characteristic by XRD, SEM and TEM. The electrochemical properties of the nanocomposites were explored by cyclic voltammetry, constant current charge/discharge testing and electrochemical impedance spectroscopy in 1M KNO3 aqueous solution. The results showed that the nanocomposites perform characteristics of electrical both double-layer capacitance and pseudocapacitance. The specific capacitances were 136.5F/g, when the current density was 0.15A/g.

Detection beyond Debye's length with an electrolyte-gated organic field-effect transistor.

PubMed

Palazzo, Gerardo; De Tullio, Donato; Magliulo, Maria; Mallardi, Antonia; Intranuovo, Francesca; Mulla, Mohammad Yusuf; Favia, Pietro; Vikholm-Lundin, Inger; Torsi, Luisa

2015-02-04

Electrolyte-gated organic field-effect transistors are successfully used as biosensors to detect binding events occurring at distances from the transistor electronic channel that are much larger than the Debye length in highly concentrated solutions. The sensing mechanism is mainly capacitive and is due to the formation of Donnan's equilibria within the protein layer, leading to an extra capacitance (CDON) in series to the gating system. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2

PubMed Central

González, Gabriel; Kolosovas-Machuca, Eleazar Samuel; López-Luna, Edgar; Hernández-Arriaga, Heber; González, Francisco Javier

2015-01-01

In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance of the interdigital capacitor was optimized by coating the electrodes with a 60 nm layer of HfO2. An analytical solution of the capacitance was compared to electromagnetic simulations using COMSOL and with experimental measurements. Results show that modeling interdigital capacitors using Finite Element Method software such as COMSOL is effective in the design and electrical characterization of these transducers. PMID:25602271

Complementary Barrier Infrared Detector (CBIRD) Contact Methods

NASA Technical Reports Server (NTRS)

Ting, David Z.; Hill, Cory J.; Gunapala, Sarath D.

2013-01-01

The performance of the CBIRD detector is enhanced by using new device contacting methods that have been developed. The detector structure features a narrow gap adsorber sandwiched between a pair of complementary, unipolar barriers that are, in turn, surrounded by contact layers. In this innovation, the contact adjacent to the hole barrier is doped n-type, while the contact adjacent to the electron barrier is doped p-type. The contact layers can have wider bandgaps than the adsorber layer, so long as good electrical contacts are made to them. If good electrical contacts are made to either (or both) of the barriers, then one could contact the barrier(s) directly, obviating the need for additional contact layers. Both the left and right contacts can be doped either n-type or ptype. Having an n-type contact layer next to the electron barrier creates a second p-n junction (the first being the one between the hole barrier and the adsorber) over which applied bias could drop. This reduces the voltage drop over the adsorber, thereby reducing dark current generation in the adsorber region.

Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature

NASA Astrophysics Data System (ADS)

Sun, Jia; Wan, Qing; Lu, Aixia; Jiang, Jie

2009-11-01

Battery drivable low-voltage SnO2-based paper thin-film transistors with a near-zero threshold voltage (Vth=0.06 V) gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated at room temperature. The operating voltage is found to be as low as 1.5 V due to the huge gate specific capacitance (1.34 μF/cm2 at 40 Hz) related to EDL formation. The subthreshold gate voltage swing and current on/off ratio is found to be 82 mV/decade and 2.0×105, respectively. The electron field-effect mobility is estimated to be 47.3 cm2/V s based on the measured gate specific capacitance at 40 Hz.

The surface chemical properties of multi-walled carbon nanotubes modified by thermal fluorination for electric double-layer capacitor

NASA Astrophysics Data System (ADS)

Jung, Min-Jung; Jeong, Euigyung; Lee, Young-Seak

2015-08-01

The surfaces of multi-walled carbon nanotubes (MWCNTs) were thermally fluorinated at various temperatures to enhance the electrochemical properties of the MWCNTs for use as electric double-layer capacitor (EDLC) electrodes. The fluorine functional groups were added to the surfaces of the MWCNTs via thermal fluorination. The thermal fluorination exposed the Fe catalyst on MWCNTs, and the specific surface area increased due to etching during the fluorination. The specific capacitances of the thermally fluorinated at 100 °C, MWCNT based electrode increased from 57 to 94 F/g at current densities of 0.2 A/g, respectively. This enhancement in capacitance can be attributed to increased polarization of the thermally fluorinated MWCNT surface, which increased the affinity between the electrode surface and the electrolyte ions.

Superionic state in double-layer capacitors with nanoporous electrodes.

PubMed

Kondrat, S; Kornyshev, A

2011-01-19

In recent experiments (Chmiola et al 2006 Science 313 1760; Largeot et al 2008 J. Am. Chem. Soc. 130 2730) an anomalous increase of the capacitance with a decrease of the pore size of a carbon-based porous electric double-layer capacitor has been observed. We explain this effect by image forces which exponentially screen out the electrostatic interactions of ions in the interior of a pore. Packing of ions of the same sign becomes easier and is mainly limited by steric interactions. We call this state 'superionic' and suggest a simple model to describe it. The model reveals the possibility of a voltage-induced first order transition between a cation(anion)-deficient phase and a cation(anion)-rich phase which manifests itself in a jump of capacitance as a function of voltage.

Design of interdigital spiral and concentric capacitive sensors for materials evaluation

NASA Astrophysics Data System (ADS)

Chen, Tianming; Bowler, Nicola

2013-01-01

This paper describes the design of two circular coplanar interdigital sensors with i) a spiral interdigital configuration and ii) a concentric interdigital configuration for the nondestructive evaluation of multilayered dielectric structures. A numerical model accounting for sensor geometry, test-piece geometry and real permittivity, and metal electrode thickness has been developed to calculate the capacitance of the sensors when in contact with a planar test-piece comprising up to four layers. Compared with a disk-and-ring coplanar capacitive sensor developed previously, the interdigital configurations are predicted to have higher signal-to-noise ratio and better accuracy in materials characterization. The disk-and-ring configuration, on the other hand, possesses advantages such as deeper penetration depth and better immunity to lift-off variations.

Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise.

PubMed

Gokirmak, Ali; Inaltekin, Hazer; Tiwari, Sandip

2009-08-19

A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10(-18) F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear DeltaC(gate-source/drain)-V(gate) response of FETs is utilized to determine the inversion layer capacitance (C(inv)) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C(inv) = 60 aF.

Humic acids as pseudocapacitive electrolyte additive for electrochemical double layer capacitors

NASA Astrophysics Data System (ADS)

Wasiński, Krzysztof; Walkowiak, Mariusz; Lota, Grzegorz

2014-06-01

Novel electrolyte additive for electrochemical capacitors has been reported. It has been demonstrated for the first time that addition of humic acids (HA) to KOH-based electrolyte significantly increases capacitance of symmetrical capacitors with electrodes made of activated carbon. Specific capacitances determined by means of galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy consistently showed increases for HA concentrations ranging from 2% w/w up to saturated solution with maximum positive effect observed for 5% w/w of the additive. The capacitance increase has been attributed to complex faradaic processes involving oxygen-containing groups of HA molecules. Due to abundant resources, low cost and easy processability the reported solution can find application in electrochemical capacitor technologies.

Ocean barrier layers’ effect on tropical cyclone intensification

PubMed Central

Balaguru, Karthik; Chang, Ping; Saravanan, R.; Leung, L. Ruby; Xu, Zhao; Li, Mingkui; Hsieh, Jen-Shan

2012-01-01

Improving a tropical cyclone’s forecast and mitigating its destructive potential requires knowledge of various environmental factors that influence the cyclone’s path and intensity. Herein, using a combination of observations and model simulations, we systematically demonstrate that tropical cyclone intensification is significantly affected by salinity-induced barrier layers, which are “quasi-permanent” features in the upper tropical oceans. When tropical cyclones pass over regions with barrier layers, the increased stratification and stability within the layer reduce storm-induced vertical mixing and sea surface temperature cooling. This causes an increase in enthalpy flux from the ocean to the atmosphere and, consequently, an intensification of tropical cyclones. On average, the tropical cyclone intensification rate is nearly 50% higher over regions with barrier layers, compared to regions without. Our finding, which underscores the importance of observing not only the upper-ocean thermal structure but also the salinity structure in deep tropical barrier layer regions, may be a key to more skillful predictions of tropical cyclone intensities through improved ocean state estimates and simulations of barrier layer processes. As the hydrological cycle responds to global warming, any associated changes in the barrier layer distribution must be considered in projecting future tropical cyclone activity. PMID:22891298

Ocean Barrier Layers’ Effect on Tropical Cyclone Intensification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balaguru, Karthik; Chang, P.; Saravanan, R.

2012-09-04

Improving a tropical cyclone's forecast and mitigating its destructive potential requires knowledge of various environmental factors that influence the cyclone's path and intensity. Herein, using a combination of observations and model simulations, we systematically demonstrate that tropical cyclone intensification is significantly affected by salinity-induced barrier layers, which are 'quasi-permanent' features in the upper tropical oceans. When tropical cyclones pass over regions with barrier layers, the increased stratification and stability within the layer reduce storm-induced vertical mixing and sea surface temperature cooling. This causes an increase in enthalpy flux from the ocean to the atmosphere and, consequently, an intensification of tropicalmore » cyclones. On average, the tropical cyclone intensification rate is nearly 50% higher over regions with barrier layers, compared to regions without. Our finding, which underscores the importance of observing not only the upper-ocean thermal structure but also the salinity structure in deep tropical barrier layer regions, may be a key to more skillful predictions of tropical cyclone intensities through improved ocean state estimates and simulations of barrier layer processes. As the hydrological cycle responds to global warming, any associated changes in the barrier layer distribution must be considered in projecting future tropical cyclone activity.« less

A Study of Vertical Transport through Graphene toward Control of Quantum Tunneling.

PubMed

Zhu, Xiaodan; Lei, Sidong; Tsai, Shin-Hung; Zhang, Xiang; Liu, Jun; Yin, Gen; Tang, Min; Torres, Carlos M; Navabi, Aryan; Jin, Zehua; Tsai, Shiao-Po; Qasem, Hussam; Wang, Yong; Vajtai, Robert; Lake, Roger K; Ajayan, Pulickel M; Wang, Kang L

2018-02-14

Vertical integration of van der Waals (vdW) materials with atomic precision is an intriguing possibility brought forward by these two-dimensional (2D) materials. Essential to the design and analysis of these structures is a fundamental understanding of the vertical transport of charge carriers into and across vdW materials, yet little has been done in this area. In this report, we explore the important roles of single layer graphene in the vertical tunneling process as a tunneling barrier. Although a semimetal in the lateral lattice plane, graphene together with the vdW gap act as a tunneling barrier that is nearly transparent to the vertically tunneling electrons due to its atomic thickness and the transverse momenta mismatch between the injected electrons and the graphene band structure. This is accentuated using electron tunneling spectroscopy (ETS) showing a lack of features corresponding to the Dirac cone band structure. Meanwhile, the graphene acts as a lateral conductor through which the potential and charge distribution across the tunneling barrier can be tuned. These unique properties make graphene an excellent 2D atomic grid, transparent to charge carriers, and yet can control the carrier flux via the electrical potential. A new model on the quantum capacitance's effect on vertical tunneling is developed to further elucidate the role of graphene in modulating the tunneling process. This work may serve as a general guideline for the design and analysis of vdW vertical tunneling devices and heterostructures, as well as the study of electron/spin injection through and into vdW materials.

Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, L., E-mail: lin.wang@insa-lyon.fr; Laurent, J.; Brémond, G.

2015-11-09

Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly contrasted SCM signals were obtained between the ZnO layers with different Ga densities. Through comparison with dopant depth profiles from secondary ion mass spectroscopy measurement, it is demonstrated that SCM is able to distinguish carrier concentrations at all levels of the samples (from 2 × 10{sup 17 }cm{sup −3} to 3 × 10{sup 20 }cm{sup −3}). The good agreement of the results from the two techniques indicates that SCM can be a useful tool for two dimensional carrier profiling at nanoscale for ZnO nanostructure development. Asmore » an example, residual carrier concentration inside the non-intentionally doped buffer layer was estimated to be around 2 × 10{sup 16 }cm{sup −3} through calibration analysis.« less

Photoelectrical Stimulation of Neuronal Cells by an Organic Semiconductor-Electrolyte Interface.

PubMed

Abdullaeva, Oliya S; Schulz, Matthias; Balzer, Frank; Parisi, Jürgen; Lützen, Arne; Dedek, Karin; Schiek, Manuela

2016-08-23

As a step toward the realization of neuroprosthetics for vision restoration, we follow an electrophysiological patch-clamp approach to study the fundamental photoelectrical stimulation mechanism of neuronal model cells by an organic semiconductor-electrolyte interface. Our photoactive layer consisting of an anilino-squaraine donor blended with a fullerene acceptor is supporting the growth of the neuronal model cell line (N2A cells) without an adhesion layer on it and is not impairing cell viability. The transient photocurrent signal upon illumination from the semiconductor-electrolyte layer is able to trigger a passive response of the neuronal cells under physiological conditions via a capacitive coupling mechanism. We study the dynamics of the capacitive transmembrane currents by patch-clamp recordings and compare them to the dynamics of the photocurrent signal and its spectral responsivity. Furthermore, we characterize the morphology of the semiconductor-electrolyte interface by atomic force microscopy and study the stability of the interface in dark and under illuminated conditions.

Study on the water flooding in the cathode of direct methanol fuel cells.

PubMed

Im, Hun Suk; Kim, Sang-Kyung; Lim, Seongyop; Peck, Dong-Hyun; Jung, Doohwan; Hong, Won Hi

2011-07-01

Water flooding phenomena in the cathode of direct methanol fuel cells were analyzed by using electrochemical impedance spectroscopy. Two kinds of commercial gas diffusion layers with different PTFE contents of 5 wt% (GDL A5) and 20 wt% (GDL B20) were used to investigate the water flooding under various operating conditions. Water flooding was divided into two types: catalyst flooding and backing flooding. The cathode impedance spectra of each gas diffusion layer was obtained and compared under the same conditions. The diameter of the capacitive semicircle became larger with increasing current density for both, and this increase was greater for GDL B20 than GDL A5. Catalyst flooding is dominant and backing flooding is negligible when the air flow rate is high and current density is low. An equivalent model was suggested and fitted to the experimental data. Parameters for catalyst flooding and backing flooding were individually obtained. The capacitance of the catalyst layer decreases as the air flow rate decreases when the catalyst flooding is dominant.

Thermal treatment effects on charge storage performance of graphene-based materials for supercapacitors.

PubMed

Zhang, Hongxin; Bhat, Vinay V; Gallego, Nidia C; Contescu, Cristian I

2012-06-27

Graphene materials were synthesized by reduction of exfoliated graphite oxide and then thermally treated in nitrogen to improve the surface area and their electrochemical performance as electrical double-layer capacitor electrodes. The structural and surface properties of the prepared reduced graphite oxide (RGO) were investigated using atomic force microscopy, scanning electron microscopy, Raman spectra, X-ray diffraction pattern analysis, and nitrogen adsorption/desorption studies. RGO forms a continuous network of crumpled sheets, which consist of large amounts of few-layer and single-layer graphenes. Electrochemical studies were conducted by cyclic voltammetry, impedance spectroscopy, and galvanostatic charge-discharge measurements. The modified RGO materials showed enhanced electrochemical performance, with maximum specific capacitance of 96 F/g, energy density of 12.8 Wh/kg, and power density of 160 kW/kg. These results demonstrate that thermal treatment of RGO at selected conditions is a convenient and efficient method for improving its specific capacitance, energy, and power density.

Cadmiun and Zinc Adsorption by Acric Soils

NASA Astrophysics Data System (ADS)

da Silva, Luiz Gabriel; Colato, Alexandre; Casagrande, José Carlos; Soares, Marcio Roberto

2017-04-01

Acrodox soils are very weathered soils, characterized by having buildup of iron and aluminum oxides and hydroxides. These soils are present in extensive productive regions in the state of São Paulo. This work aimed at verifying the adequacy of constant capacitance model in describing the adsorption of cadmium and zinc in Anionic Rhodic Acrudox, Anionic Xanthic Acrudox and Rhodic Hapludalf. The chemical, mineralogical and physical attributes of these soils were determined in the layers 0-20 cm and 20-40 cm. Adsorption data of cadmium and zinc were also previously determined for samples of both layers of each soil. Were applied 5 mg dm-3 of cadmium and zinc to 2,0 g of soil to ample pH range (3 to 10) to build the adsorption envelops to three ionic strength. The constant capacitance model was adequate to simulate the adsorption of zinc and cadmium. It was not possible to make appropriate distinctions between measurements and simulations for two soil layers studied, neither between the three concentrations of background electrolyte.

Multi-layer waste containment barrier

DOEpatents

Smith, Ann Marie; Gardner, Bradley M.; Nickelson, David F.

1999-01-01

An apparatus for constructing an underground containment barrier for containing an in-situ portion of earth. The apparatus includes an excavating device for simultaneously (i) excavating earthen material from beside the in-situ portion of earth without removing the in-situ portion and thereby forming an open side trench defined by opposing earthen sidewalls, and (ii) excavating earthen material from beneath the in-situ portion of earth without removing the in-situ portion and thereby forming a generally horizontal underground trench beneath the in-situ portion defined by opposing earthen sidewalls. The apparatus further includes a barrier-forming device attached to the excavating device for simultaneously forming a side barrier within the open trench and a generally horizontal, multi-layer barrier within the generally horizontal trench. The multi-layer barrier includes at least a first layer and a second layer.

Surface Characterization, Corrosion Resistance and in Vitro Biocompatibility of a New Ti-Hf-Mo-Sn Alloy

PubMed Central

Ion, Raluca; Drob, Silviu Iulian; Ijaz, Muhammad Farzik; Vasilescu, Cora; Osiceanu, Petre; Gordin, Doina-Margareta; Cimpean, Anisoara; Gloriant, Thierry

2016-01-01

A new superelastic Ti-23Hf-3Mo-4Sn biomedical alloy displaying a particularly large recovery strain was synthesized and characterized in this study. Its native passive film is very thick (18 nm) and contains very protective TiO2, Ti2O3, HfO2, MoO2, and SnO2 oxides (XPS analysis). This alloy revealed nobler electrochemical behavior, more favorable values of the corrosion parameters and open circuit potentials in simulated body fluid in comparison with commercially pure titanium (CP-Ti) and Ti-6Al-4V alloy taken as reference biomaterials in this study. This is due to the favorable influence of the alloying elements Hf, Sn, Mo, which enhance the protective properties of the native passive film on alloy surface. Impedance spectra showed a passive film with two layers, an inner, capacitive, barrier, dense layer and an outer, less insulating, porous layer that confer both high corrosion resistance and bioactivity to the alloy. In vitro tests were carried out in order to evaluate the response of Human Umbilical Vein Endothelial Cells (HUVECs) to Ti-23Hf-3Mo-4Sn alloy in terms of cell viability, cell proliferation, phenotypic marker expression and nitric oxide release. The results indicate a similar level of cytocompatibility with HUVEC cells cultured on Ti-23Hf-3Mo-4Sn substrate and those cultured on the conventional CP-Ti and Ti-6Al-4V metallic materials. PMID:28773939

Water-retaining barrier and method of construction

DOEpatents

Adams, Melvin R.; Field, Jim G.

1996-01-01

An agricultural barrier providing a medium for supporting plant life in an arid or semi-arid land region having a ground surface, the barrier being disposed on native soil of the region, the barrier including: a first layer composed of pieces of basalt, the first layer being porous and being in contact with the native soil; a porous second layer of at least one material selected from at least one of sand and gravel, the second layer being less porous than, and overlying, the first layer; and a porous third layer containing soil which favors plant growth, the third layer being less porous than, and overlying, the second layer and having an exposed upper surface, wherein the porosities of the second and third layers differ from one another by an amount which impedes transport of soil from the first layer into the second layer. Soil for the third layer may be provided by washing salinated or contaminated soil with water and using the washed soil for the third layer.

Water-retaining barrier and method of construction

DOEpatents

Adams, M.R.; Field, J.G.

1996-02-20

An agricultural barrier is disclosed which provides a medium for supporting plant life in an arid or semi-arid land region having a ground surface. The barrier is disposed on native soil of the region. The barrier includes a first porous layer composed of pieces of basalt, and is in contact with the native soil. There is a less porous second layer of at least one material selected from at least one of sand and gravel. The second layer overlies the first layer. A third layer, less porous than the second layer, contains soil which favors plant growth. The third layer overlies the second layer and has an exposed upper surface. The porosities of the second and third layers differ from one another by an amount which impedes transport of soil from the first layer into the second layer. Soil for the third layer may be provided by washing salinated or contaminated soil with water and using the washed soil for the third layer. 2 figs.

Barrier layer for a MCrAlY basecoat superalloy combination

DOEpatents

Sabol, Stephen M.; Goedjen, John G.; Vance, Steven J.

2001-01-01

A turbine component contains a substrate (22) such as a superalloy, a basecoat (24) of the type MCrAlY, and a continuous barrier layer (28) between the substrate and basecoat, where the barrier layer (28) is made of an alloy of (Re, Ta, Ru, Os)X, where X can be Ni, Co or their mixture, where the barrier layer is at least 2 micrometers thick and substantially prevents materials from both the basecoat and substrate from migrating through it.

Stratum corneum hydration and skin surface pH in patients with atopic dermatitis.

PubMed

Knor, Tanja; Meholjić-Fetahović, Ajša; Mehmedagić, Aida

2011-01-01

Atopic dermatitis (AD) is a chronically relapsing skin disease with genetic predisposition, which occurs most frequently in preschool children. It is considered that dryness and pruritus, which are always present in AD, are in correlation with degradation of the skin barrier function. Measurement of hydration and pH value of the stratum corneum is one of the noninvasive methods for evaluation of skin barrier function. The aim of the study was to assess skin barrier function by measuring stratum corneum hydration and skin surface pH of the skin with lesions, perilesional skin and uninvolved skin in AD patients, and skin in a healthy control group. Forty-two patients were included in the study: 21 young and adult AD patients and 21 age-matched healthy controls. Capacitance, which is correlated with hydration of stratum corneum and skin surface pH were measured on the forearm in the above areas by SM810/CM820/pH900 combined units (Courage AND Khazaka, Germany). The mean value of water capacitance measured in AD patients was 44.1 ± 11.6 AU (arbitrary units) on the lesions, 60.2 ± 12.4 AU on perilesional skin and 67.2 ± 8.8 AU on uninvolved skin. In healthy controls, the mean value was 74.1 ± 9.2 AU. The mean pH value measured in AD patients was 6.13 ± 0.52 on the lesions, 5.80 ± 0.41 on perilesional skin, and 5.54 ± 0.49 on uninvolved skin. In control group, the mean pH of the skin surface was 5.24 ± 0.40. The values of both parameters measured on lesional skin were significantly different (capacitance decreased and pH increased) from the values recorded on perilesional skin and uninvolved skin. The same held for the relation between perilesional and uninvolved skin. According to study results, the uninvolved skin of AD patients had significantly worse values of the measured parameters as compared with control group. The results of this study suggested the skin barrier function to be degraded in AD patients, which is specifically expressed in lesional skin.

Preparation and electrochemical characterization of polyaniline/activated carbon composites as an electrode material for supercapacitors.

PubMed

Oh, Misoon; Kim, Seok

2012-01-01

Polyaniline (PANI)/activated carbon (AC) composites were prepared by a chemical oxidation polymerization. To find an optimum ratio between PANI and AC which shows superior electrochemical properties, the preparation was carried out in changing the amount of added aniline monomers. The morphology of prepared composites was investigated by scanning electron microscopy (SEM) and transmission electron microscope (TEM). The structural and thermal properties were investigated by Fourier transform infrared spectra (FT-IR) and thermal gravimetric analysis (TGA), respectively. The electrochemical properties were characterized by cyclic voltammetry (CV). Composites showed a summation of capacitances that consisted of two origins. One is double-layer capacitance by ACs and the other is faradic capacitance by redox reaction of PANI. Fiber-like PANIs are coated on the surface of ACs and they contribute to the large surface for redox reaction. The vacancy among fibers provided the better diffusion and accessibility of ion. High capacitances of composites were originated from the network structure having vacancy made by PANI fibers. It was found that the composite prepared with 5 ml of aniline monomer and 0.25 g of AC showed the highest capacitance. Capacitance of 771 F/g was obtained at a scan rate of 5 mV/s.

Tailoring graphene-based electrodes from semiconducting to metallic to increase the energy density in supercapacitors.

PubMed

Vatamanu, Jenel; Ni, Xiaojuan; Liu, Feng; Bedrov, Dmitry

2015-11-20

The semiconducting character of graphene and some carbon-based electrodes can lead to noticeably lower total capacitances and stored energy densities in electric double layer (EDL)capacitors. This paper discusses the chemical and electronic structure modifications that enhance the available energy bands, density of states and quantum capacitance of graphene substrates near the Fermi level, therefore restoring the conducting character of these materials. The doping of graphene with p or n dopants, such as boron and nitrogen atoms, or the introduction of vacancy defects that introduce zigzag edges, can significantly increase the quantum capacitance within the potential range of interest for the energy storage applications by either shifting the Dirac point away from the Fermi level or by eliminating the Dirac point. We show that a combination of doping and vacancies at realistic concentrations is sufficient to increase the capacitance of a graphene-based electrode to within 1 μF cm(−2) from that of a metallic surface.Using a combination of ab initio calculations and classical molecular dynamics simulations we estimate how the changes in the quantum capacitance of these electrode materials affect the total capacitance stored by the open structure EDL capacitors containing room temperature ionic liquid electrolytes.

Synthesis of ultrathin nitrogen-doped graphitic carbon nanocages as advanced electrode materials for supercapacitor.

PubMed

Tan, Yueming; Xu, Chaofa; Chen, Guangxu; Liu, Zhaohui; Ma, Ming; Xie, Qingji; Zheng, Nanfeng; Yao, Shouzhuo

2013-03-01

Synthesis of nitrogen-doped carbons with large surface area, high conductivity, and suitable pore size distribution is highly desirable for high-performance supercapacitor applications. Here, we report a novel protocol for template synthesis of ultrathin nitrogen-doped graphitic carbon nanocages (CNCs) derived from polyaniline (PANI) and their excellent capacitive properties. The synthesis of CNCs involves one-pot hydrothermal synthesis of Mn3O4@PANI core-shell nanoparticles, carbonization to produce carbon coated MnO nanoparticles, and then removal of the MnO cores by acidic treatment. The CNCs prepared at an optimum carbonization temperature of 800 °C (CNCs-800) have regular frameworks, moderate graphitization, high specific surface area, good mesoporosity, and appropriate N doping. The CNCs-800 show high specific capacitance (248 F g(-1) at 1.0 A g(-1)), excellent rate capability (88% and 76% capacitance retention at 10 and 100 A g(-1), respectively), and outstanding cycling stability (~95% capacitance retention after 5000 cycles) in 6 M KOH aqueous solution. The CNCs-800 can also exhibit great pseudocapacitance in 0.5 M H2SO4 aqueous solution besides the large electrochemical double-layer capacitance. The excellent capacitance performance coupled with the facile synthesis of ultrathin nitrogen-doped graphitic CNCs indicates their great application potential in supercapacitors.

Electrostatic Self-Assembly of Sandwich-Like CoAl-LDH/Polypyrrole/Graphene Nanocomposites with Enhanced Capacitive Performance.

PubMed

Zhang, Yu; Du, Dongfeng; Li, Xuejin; Sun, Hongman; Li, Li; Bai, Peng; Xing, Wei; Xue, Qingzhong; Yan, Zifeng

2017-09-20

A novel sandwich-like composite with ultrathin CoAl-layered double hydroxide (LDH) nanoplates electrostatically assembled on both sides of two-dimensional polypyrrole/graphene (PG) substrate has been successfully fabricated using facile hydrothermal techniques. The PG not only serves as an excellent conductive and structural scaffold to enhance the transmission of electrons and prevent aggregation of CoAl-LDH nanoplates but also contributes to the enhancement of the specific capacitance. Owing to the homogeneous dispersion of CoAl-LDH nanoplates and its intimate interaction with PG substrate, the resulting CoAl-LDH/PG nanocomposite material exhibits excellent capacitive performance, for example, enhanced gravimetric specific capacitance (864 F g -1 at 1 A g -1 ), high rate performance (75% retention at 20 A g -1 ), and excellent cycle life (almost no degradation in supercapacitor performance after 5000 cycles) in aqueous KOH solution. Furthermore, the assembled asymmetric capacitor is able to deliver a superhigh energy density of 46.8 Wh kg -1 at 1.2 kW kg -1 and maintain 90.1% of its initial capacitance after 10 000 cycles. These results indicate a rational assembly strategy toward a high-performance pseudocapacitive electrode material with excellent rate performance, high specific capacitance, and outstanding cycle stability.

Double polymer sheathed carbon nanotube supercapacitors show enhanced cycling stability

NASA Astrophysics Data System (ADS)

Zhao, Wenqi; Wang, Shanshan; Wang, Chunhui; Wu, Shiting; Xu, Wenjing; Zou, Mingchu; Ouyang, An; Cao, Anyuan; Li, Yibin

2015-12-01

Pseudo-materials are effective in boosting the specific capacitance of supercapacitors, but during service their degradation may also be very strong, causing reduced cycling stability. Here, we show that a carbon nanotube sponge grafted by two conventional pseudo-polymer layers in sequence can serve as a porous supercapacitor electrode with significantly enhanced cycling stability compared with single polymer grafting. Creating conformal polymer coatings on the nanotube surface and the resulting double-sheath configuration are important structural factors leading to the enhanced performance. Combining different polymers as double sheaths as reported here might be a potential route to circumvent the dilemma of pseudo-materials, and to simultaneously improve the capacitance and stability for various energy storage devices.Pseudo-materials are effective in boosting the specific capacitance of supercapacitors, but during service their degradation may also be very strong, causing reduced cycling stability. Here, we show that a carbon nanotube sponge grafted by two conventional pseudo-polymer layers in sequence can serve as a porous supercapacitor electrode with significantly enhanced cycling stability compared with single polymer grafting. Creating conformal polymer coatings on the nanotube surface and the resulting double-sheath configuration are important structural factors leading to the enhanced performance. Combining different polymers as double sheaths as reported here might be a potential route to circumvent the dilemma of pseudo-materials, and to simultaneously improve the capacitance and stability for various energy storage devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05978j

Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage.

PubMed

Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

2016-12-01

Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm(2) at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10(-8) A/cm(2) at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

Enhanced performance of HRGO-RuO 2 solid state flexible supercapacitors fabricated by electrophoretic deposition

DOE PAGES

Amir, Fatima Z.; Pham, V. H.; Mullinax, D. W.; ...

2016-06-07

Ruthenium oxide (RuO 2) nanomaterials exist as excellent materials for electrochemical capacitors. However, they tend to suffer from low mechanical flexibility when cast into films, which makes them unsuitable for flexible device applications. Herein, we report an environmentally friendly and solution-processable approach to fabricate RuO 2-based composite electrodes for flexible solid state supercapacitors. The composites were produced by anchoring RuO 2 nanoparticles onto holey reduced graphene oxide (HRGO) via a sol-gel method, followed by the electrophoretic deposition (EPD) of the material into thin films. The uniform anchoring of ultra-small RuO 2 nanoparticles on the two-dimensional HRGO sheets resulted in HRGO-RuOmore » 2 hybrid sheets with excellent mechanical flexibility of HRGO. EPD induced a layer-by-layer assembly mechanism for the HRGO-RuO 2 hybrid sheets, which resulted in a binder-free, flexible electrode. The obtained HRGO-RuO 2 flexible supercapacitors exhibited excellent electrochemical capacitive performance in a PVA-H 2SO 4 gel electrolyte with a specific capacitance of 418 F g -1 and superior cycling stability of 88.5% capacitance retention after 10,000 cycles. Additionally, these supercapacitors exhibited high rate performance with capacitance retention of 85% by increasing the current density from 1.0 to 20.0 Ag -1, and excellent mechanical flexibility with only 4.9% decay in the performance when bent 180°.« less

Designing a Novel Polymer Electrolyte for Improving the Electrode/Electrolyte Interface in Flexible All-Solid-State Electrical Double-Layer Capacitors.

PubMed

Wang, Jeng-An; Lu, Yi-Ting; Lin, Sheng-Chi; Wang, Yu-Sheng; Ma, Chen-Chi M; Hu, Chi-Chang

2018-05-30

A novel copolymer, polyurethane-poly(acrylic acid) (PAA), is successfully synthesized from poly(acrylic acid) (PAA) backbone cross-linked with waterborne polyurethane (WPU). This sticky polymer, which is neutralized with 1 M KOH and then soaked in 1 M KOH (denoted as WPU-PAAK-K), provides an ionic conductivity greater than 10 -2 S cm -1 and acts as a gel electrolyte perfectly improving the electrode/electrolyte interfaces in a flexible all-solid-state electrical double-layer capacitor (EDLC). The PAA backbone chains in the copolymer increase the amount of carboxyl groups and promote the segmental motion. The carboxyl groups enhance the water-uptake capacity, which facilitates the ion transport and promotes the ionic conductivity. The cross-linked agent, WPU chains, effectively maintains the rich water content and provides mechanical stickiness to bind two electrodes together. An acid-treated carbon paper (denoted as ACP) combining with such a gel polymer electrolyte demonstrates excellent capacitive behavior with a high areal capacitance of 211.6 mF cm -2 at 10 mV s -1 . A full cell consisting of ACP/WPU-PAAK-K/ACP displays a low equivalent series resistance of 0.44 Ω from the electrochemical impedance spectroscopic results. An all-solid-state ACP/WPU-PAAK-K/ACP EDLC provides an areal specific capacitance of 94.6 mF cm -2 at 1 mA cm -2 . This device under 180° bending shows a capacitance retention over 90%, revealing its remarkable flexibility.

Penetration resistant barrier

DOEpatents

Hoover, William R.; Mead, Keith E.; Street, Henry K.

1977-01-01

The disclosure relates to a barrier for resisting penetration by such as hand tools and oxy-acetylene cutting torches. The barrier comprises a layer of firebrick, which is preferably epoxy impregnated sandwiched between inner and outer layers of steel. Between the firebrick and steel are layers of resilient rubber-like filler.

Planar varactor frequency multiplier devices with blocking barrier

NASA Technical Reports Server (NTRS)

Lieneweg, Udo (Inventor); Frerking, Margaret A. (Inventor); Maserjian, Joseph (Inventor)

1994-01-01

The invention relates to planar varactor frequency multiplier devices with a heterojunction blocking barrier for near millimeter wave radiation of moderate power from a fundamental input wave. The space charge limitation of the submillimeter frequency multiplier devices of the BIN(sup +) type is overcome by a diode structure comprising an n(sup +) doped layer of semiconductor material functioning as a low resistance back contact, a layer of semiconductor material with n-type doping functioning as a drift region grown on the back contact layer, a delta doping sheet forming a positive charge at the interface of the drift region layer with a barrier layer, and a surface metal contact. The layers thus formed on an n(sup +) doped layer may be divided into two isolated back-to-back BNN(sup +) diodes by separately depositing two surface metal contacts. By repeating the sequence of the drift region layer and the barrier layer with the delta doping sheet at the interfaces between the drift and barrier layers, a plurality of stacked diodes is formed. The novelty of the invention resides in providing n-type semiconductor material for the drift region in a GaAs/AlGaAs structure, and in stacking a plurality of such BNN(sup +) diodes stacked for greater output power with and connected back-to-back with the n(sup +) GaAs layer as an internal back contact and separate metal contact over an AlGaAs barrier layer on top of each stack.

Multiple layer identification label using stacked identification symbols

NASA Technical Reports Server (NTRS)

Schramm, Harry F. (Inventor)

2005-01-01

An automatic identification system and method are provided which employ a machine readable multiple layer label. The label has a plurality of machine readable marking layers stacked one upon another. Each of the marking layers encodes an identification symbol detectable using one or more sensing technologies. The various marking layers may comprise the same marking material or each marking layer may comprise a different medium having characteristics detectable by a different sensing technology. These sensing technologies include x-ray, radar, capacitance, thermal, magnetic and ultrasonic. A complete symbol may be encoded within each marking layer or a symbol may be segmented into fragments which are then divided within a single marking layer or encoded across multiple marking layers.

High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors.

PubMed

Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

2015-06-08

A two-step method consisting of solid-state microwave irradiation and heat treatment under NH3 gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007 m(2)  g(-1) ), high electrical conductivity (1532 S m(-1) ), and low oxygen content (1.5 wt %) for electrical double-layer capacitor applications. The specific capacitance of N-RGO was 291 F g(-1) at a current density of 1 A g(-1) , and a capacitance of 261 F g(-1) was retained at 50 A g(-1) , which indicated a very good rate capability. N-RGO also showed excellent cycling stability and preserved 96 % of the initial specific capacitance after 100 000 cycles. Near-edge X-ray absorption fine-structure spectroscopy results provided evidenced for the recovery of π conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabricating capacitive micromachined ultrasonic transducers with a novel silicon-nitride-based wafer bonding process.

PubMed

Logan, Andrew; Yeow, John T W

2009-05-01

We report the fabrication and experimental testing of 1-D 23-element capacitive micromachined ultrasonic transducer (CMUT) arrays that have been fabricated using a novel wafer-bonding process whereby the membrane and the insulation layer are both silicon nitride. The membrane and cell cavities are deposited and patterned on separate wafers and fusion-bonded in a vacuum environment to create CMUT cells. A user-grown silicon-nitride membrane layer avoids the need for expensive silicon-on-insulator (SOI) wafers, reduces parasitic capacitance, and reduces dielectric charging. It allows more freedom in selecting the membrane thickness while also providing the benefits of wafer-bonding fabrication such as excellent fill factor, ease of vacuum sealing, and a simplified fabrication process when compared with the more standard sacrificial release process. The devices fabricated have a cell diameter of 22 microm, a membrane thickness of 400 nm, a gap depth of 150 nm, and an insulation thickness of 250 nm. The resonant frequency of the CMUT in air is 17 MHz and has an attenuation compensated center frequency of approximately 9 MHz in immersion with a -6 dB fractional bandwidth of 123%. This paper presents the fabrication process and some characterization results.

An Ideal Electrode Material, 3D Surface-Microporous Graphene for Supercapacitors with Ultrahigh Areal Capacitance

DOE PAGES

Chang, Liang; Stacchiola, Dario J.; Hu, Yun Hang

2017-07-03

The efficient charge accumulation of an ideal supercapacitor electrode requires abundant micropores and its fast electrolyte-ions transport prefers meso/macropores. But, current electrode materials cannot meet both requirements, resulting in poor performance. We creatively constructed three-dimensional cabbage-coral-like graphene as an ideal electrode material, in which meso/macro channels are formed by graphene walls and rich micropores are incorporated in the surface layer of the graphene walls. The unique 3D graphene material can achieve a high gravimetric capacitance of 200 F/g with aqueous electrolyte, 3 times larger than that of commercially used activated carbon (70.8 F/g). Furthermore, it can reach an ultrahigh arealmore » capacitance of 1.28 F/cm 2 and excellent rate capability (83.5% from 0.5 to 10 A/g) as well as high cycling stability (86.2% retention after 5000 cycles). The excellent electric double-layer performance of the 3D graphene electrode can be attributed to the fast electrolyte ion transport in the meso/macro channels and the rapid and reversible charge adsorption with negligible transport distance in the surface micropores.« less

High-Sensitivity and Low-Hysteresis Porous MIM-Type Capacitive Humidity Sensor Using Functional Polymer Mixed with TiO2 Microparticles

PubMed Central

Liu, Ming-Qing; Wang, Cong; Kim, Nam-Young

2017-01-01

In this study, a high-sensitivity and low-hysteresis porous metal–insulator–metal-type capacitive humidity sensor is investigated using a functional polymer mixed with TiO2 microparticles. The humidity sensor consists of an optimally designed porous top electrode, a functional polymer humidity sensitive layer, a bottom electrode, and a glass substrate. The porous top electrode is designed to increase the contact area between the sensing layer and water vapor, leading to high sensitivity and quick response time. The functional polymer mixed with TiO2 microparticles shows excellent hysteresis under a wide humidity-sensing range with good long-term stability. The results show that as the relative humidity ranges from 10% RH to 90% RH, the proposed humidity sensor achieves a high sensitivity of 0.85 pF/% RH and a fast response time of less than 35 s. Furthermore, the sensor shows an ultra-low hysteresis of 0.95% RH at 60% RH, a good temperature dependence, and a stable capacitance value with a maximum of 0.17% RH drift during 120 h of continuous test. PMID:28157167

Transport and charging mechanisms in Ta2O5 thin films for capacitive RF MEMS switches application

NASA Astrophysics Data System (ADS)

Persano, A.; Quaranta, F.; Martucci, M. C.; Cretı, P.; Siciliano, P.; Cola, A.

2010-06-01

The potential of sputtered Ta2O5 thin films to be used as dielectric layers in capacitive radio frequency microelectromechanical system switches is evaluated by investigating two factors of crucial importance for the performance of these devices which are the transport mechanisms and the charging effects in the dielectric layer. We find that Ta2O5 films show good electrical and dielectrical properties for the considered application in terms of a low leakage current density of 4 nA/cm2 for E =1 MV/cm, a high breakdown field of 4 MV/cm and a high dielectric constant of 32. For electric fields lower than 1 MV/cm the conduction mechanism is found to be variable-range hopping in the temperature range 300-400 K, while nearest-neighbor hopping is observed at higher temperatures. For fields in the range 1-4 MV/cm Poole-Frenkel becomes the dominant conduction mechanism. Current and capacitance transients used to investigate the charging effects show a decay which is well described by the stretched-exponential law, thus providing further insights on capture and emission processes.

An Ideal Electrode Material, 3D Surface-Microporous Graphene for Supercapacitors with Ultrahigh Areal Capacitance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Liang; Stacchiola, Dario J.; Hu, Yun Hang

The efficient charge accumulation of an ideal supercapacitor electrode requires abundant micropores and its fast electrolyte-ions transport prefers meso/macropores. But, current electrode materials cannot meet both requirements, resulting in poor performance. We creatively constructed three-dimensional cabbage-coral-like graphene as an ideal electrode material, in which meso/macro channels are formed by graphene walls and rich micropores are incorporated in the surface layer of the graphene walls. The unique 3D graphene material can achieve a high gravimetric capacitance of 200 F/g with aqueous electrolyte, 3 times larger than that of commercially used activated carbon (70.8 F/g). Furthermore, it can reach an ultrahigh arealmore » capacitance of 1.28 F/cm 2 and excellent rate capability (83.5% from 0.5 to 10 A/g) as well as high cycling stability (86.2% retention after 5000 cycles). The excellent electric double-layer performance of the 3D graphene electrode can be attributed to the fast electrolyte ion transport in the meso/macro channels and the rapid and reversible charge adsorption with negligible transport distance in the surface micropores.« less

Influences of internal resistance and specific surface area of electrode materials on characteristics of electric double layer capacitors

NASA Astrophysics Data System (ADS)

Suda, Yoshiyuki; Mizutani, Akitaka; Harigai, Toru; Takikawa, Hirofumi; Ue, Hitoshi; Umeda, Yoshito

2017-01-01

We fabricated electric double layer capacitors (EDLCs) using particulate and fibrous types of carbon nanomaterials with a wide range of specific surface areas and resistivity as an active material. The carbon nanomaterials used in this study are carbon nanoballoons (CNBs), onion-like carbon (OLC), and carbon nanocoils (CNCs). A commercially used activated carbon (AC) combined with a conductive agent was used as a comparison. We compared the EDLC performance using cyclic voltammetry (CV), galvanostatic charge/discharge testing, and electrochemical impedance spectroscopy (EIS). OLC showed a poor EDLC performance, although it has the lowest resistivity among the carbon nanomaterials. CNB, which has a 1/16 lower specific surface area than AC but higher specific surface area than CNC and OLC, had a higher specific capacitance than CNC and OLC. Moreover, at current densities of 1.5 Ag-1 and larger, the specific capacitance of the EDLC using CNB was almost the same as that using AC. Electrochemical impedance spectroscopy of the EDLCs revealed that the CNB and CNC electrodes had a much lower internal resistance than the AC electrode, which correlated with a low capacitance maintenance factor as the current density increased.

The Influence of Anion Shape on the Electrical Double Layer Microstructure and Capacitance of Ionic Liquids-Based Supercapacitors by Molecular Simulations.

PubMed

Chen, Ming; Li, Song; Feng, Guang

2017-02-16

Room-temperature ionic liquids (RTILs) are an emerging class of electrolytes for supercapacitors. In this work, we investigate the effects of different supercapacitor models and anion shape on the electrical double layers (EDLs) of two different RTILs: 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([Emim][Tf₂N]) and 1-ethyl-3-methylimidazolium 2-(cyano)pyrrolide ([Emim][CNPyr]) by molecular dynamics (MD) simulation. The EDL microstructure is represented by number densities of cations and anions, and the potential drop near neutral and charged electrodes reveal that the supercapacitor model with a single electrode has the same EDL structure as the model with two opposite electrodes. Nevertheless, the employment of the one-electrode model without tuning the bulk density of RTILs is more time-saving in contrast to the two-electrode one. With the one-electrode model, our simulation demonstrated that the shapes of anions significantly imposed effects on the microstructure of EDLs. The EDL differential capacitance vs. potential (C-V) curves of [Emim][CNPyr] electrolyte exhibit higher differential capacitance at positive potentials. The modeling study provides microscopic insight into the EDLs structure of RTILs with different anion shapes.

Capacitance-voltage measurement in memory devices using ferroelectric polymer

NASA Astrophysics Data System (ADS)

Nguyen, Chien A.; Lee, Pooi See

2006-01-01

Application of thin polymer film as storing mean for non-volatile memory devices is investigated. Capacitance-voltage (C-V) measurement of metal-ferroelectric-metal device using ferroelectric copolymer P(VDF-TrFE) as dielectric layer shows stable 'butter-fly' curve. The two peaks in C-V measurement corresponding to the largest capacitance are coincidental at the coercive voltages that give rise to zero polarization in the polarization hysteresis measurement. By comparing data of C-V and P-E measurement, a correlation between two types of hysteresis is established in which it reveals simultaneous electrical processes occurring inside the device. These processes are caused by the response of irreversible and reversible polarization to the applied electric field that can be used to present a memory window. The memory effect of ferroelectric copolymer is further demonstrated for fabricating polymeric non-volatile memory devices using metal-ferroelectric-insulator-semiconductor structure (MFIS). By applying different sweeping voltages at the gate, bidirectional flat-band voltage shift is observed in the ferroelectric capacitor. The asymmetrical shift after negative sweeping is resulted from charge accumulation at the surface of Si substrate caused by the dipole direction in the polymer layer. The effect is reversed for positive voltage sweeping.

Boosting the Performance of Ionic-Liquid-Based Supercapacitors with Polar Additives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Kun; Wu, Jianzhong

Recent years have witnessed growing interests in both the fundamentals and applications of electric double layer capacitors (EDLCs), also known as supercapacitors. A number of strategies have been explored to optimize the device performance in terms of both the energy and power densities. Because the properties of electric double layers (EDL) are sensitive to ion distributions in the close vicinity of the electrode surfaces, the supercapacitor performance is sensitive to both the electrode pore structure and the electrolyte composition. In this paper, we study the effects of polar additives on EDLC capacitance using the classical density functional theory within themore » framework of a coarse-grained model for the microscopic structure of the porous electrodes and room-temperature ionic liquids. The theoretical results indicate that a highly polar, low-molecular-weight additive is able to drastically increase the EDLC capacitance at low bulk concentration. Additionally, the additive is able to dampen the oscillatory dependence of the capacitance on the pore size, thereby boosting the performance of amorphous electrode materials. Finally, the theoretical predictions are directly testable with experiments and provide new insights into the additive effects on EDL properties.« less

A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures

NASA Astrophysics Data System (ADS)

All Abbas, J. M.; Atmaca, G.; Narin, P.; Kutlu, E.; Sarikavak-Lisesivdin, B.; Lisesivdin, S. B.

2017-08-01

Investigations of the effects of back-barrier introduction on the two-dimensional electron gas (2DEG) of ultrathin-barrier AlN/GaN heterostructures with AlGaN and InGaN back-barriers are carried out using self-consistent solutions of 1-dimensional Schrödinger-Poisson equations. Inserted AlGaN and InGaN back-barriers are used to provide a good 2DEG confinement thanks to raising the conduction band edge of GaN buffer with respect to GaN channel layer. Therefore, in this paper the influence of these back-barrier layers on sheet carrier density, 2DEG confinement, and mobility are systematically and comparatively investigated. As a result of calculations, although sheet carrier density is found to decrease with InGaN back-barrier layer, it is not changed with AlGaN back-barrier layer for suggested optimise heterostructures. Obtained results can give some insights for further experimental studies.

Microscopic Theory of Supercapacitors

NASA Astrophysics Data System (ADS)

Skinner, Brian Joseph

As new energy technologies are designed and implemented, there is a rising demand for improved energy storage devices. At present the most promising class of these devices is the electric double-layer capacitor (EDLC), also known as the supercapacitor. A number of recently created supercapacitors have been shown to produce remarkably large capacitance, but the microscopic mechanisms that underlie their operation remain largely mysterious. In this thesis we present an analytical, microscopic-level theory of supercapacitors, and we explain how such large capacitance can result. Specifically, we focus on four types of devices that have been shown to produce large capacitance. The first is a capacitor composed of a clean, low-temperature two-dimensional electron gas adjacent to a metal gate electrode. Recent experiments have shown that such a device can produce capacitance as much as 40% larger than that of a conventional plane capacitor. We show that this enhanced capacitance can be understood as the result of positional correlations between electrons and screening by the gate electrode in the form of image charges. Thus, the enhancement of the capacitance can be understood primarily as a classical, electrostatic phenomenon. Accounting for the quantum mechanical properties of the electron gas provides corrections to the classical theory, and these are discussed. We also present a detailed numerical calculation of the capacitance of the system based on a calculation of the system's ground state energy using the variational principle. The variational technique that we develop is broadly applicable, and we use it here to make an accurate comparison to experiment and to discuss quantitatively the behavior of the electrons' correlation function. The second device discussed in this thesis is a simple EDLC composed of an ionic liquid between two metal electrodes. We adopt a simple description of the ionic liquid and show that for realistic parameter values the capacitance can be as much as three times larger than that of a plane capacitor with thickness equal to the ion diameter. As in the previous system, this large capacitance is the result of image charge formation in the metal electrode and positional correlations between discrete ions that comprise the electric double-layer. We show that the maximum capacitance scales with the temperature to the power -1/3, and that at moderately large voltage the capacitance also decays as the inverse one third power of voltage. These results are confirmed by a Monte Carlo simulation. The third type of device we consider is that of a porous supercapacitor, where the electrode is made from a conducting material with a dense arrangement of narrow, planar pores into which ionic liquid can enter when a voltage is applied. In this case we show that when the electrode is metallic the narrow pores aggressively screen the interaction between neighboring ions in a pore, leading to an interaction energy between ions that decays exponentially. This exponential interaction between ions allows the capacitance to be nearly an order of magnitude larger than what is predicted by mean-field theories. This result is confirmed by a Monte Carlo simulation. We also present a theory for the capacitance when the electrode is not a perfect metal, but has a finite electronic screening radius. When this screening radius is larger than the distance between pores, ions begin to interact across multiple pores and the capacitance is determined by the Yukawa-like interaction of a three-dimensional, correlated arrangement of ions. Finally, we consider the case of supercapacitor electrodes made from a stack of graphene sheets with randomly-inserted "spacer" molecules. For such devices, experiments have produced very large capacitance despite the small density of states of the electrode material, which would seem to imply poor screening of the ionic charge. We show that these large capacitance values can be understood as the result of collective entrance of ions into the graphene stack (GS) and the renormalization of the ionic charge produced by nonlinear screening. The collective behavior of ions results from the strong elastic energy associated with intercalated ions deforming the GS, which creates an effective attraction between them. The result is the formation of "disks" of charge that enter the electrode collectively and have their charge renormalized by the strong, nonlinear screening of the surrounding graphene layers. This renormalization leads to a capacitance that at small voltages increases linearly with voltage and is enhanced over mean-field predictions by a large factor proportional to the number of ions within the disk to the power 9/4. At large voltages, the capacitance is dictated by the physics of graphite intercalation compounds and is proportional to the voltage raised to the power -4/5. We also examine theoretically the case where the effective fine structure constant of the GS is a small parameter, and we uncover a wealth of scaling regimes.

Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

DOEpatents

Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

2005-02-01

A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E. (Inventor)

2014-01-01

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

Current transport and capacitance-voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique

NASA Astrophysics Data System (ADS)

Nasr, Mahmoud; El Radaf, I. M.; Mansour, A. M.

2018-04-01

In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current-voltage characteristics of the heterojunction were investigated at different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance, diode ideality factor, and effective barrier height (ϕb) were determined. The photovoltaic parameters were identified based on the current density-voltage characteristics under illumination. The capacitance-voltage characteristics showed that the junction was abrupt in nature.

Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Liu, Chuan; Li, Gongtan; Di Pietro, Riccardo; Huang, Jie; Noh, Yong-Young; Liu, Xuying; Minari, Takeo

2017-09-01

Very high values of carrier mobility have been recently reported in newly developed materials for field-effect transistors (FETs) or thin-film transistors (TFTs). However, there is an increasing concern of whether the values are overestimated. In this paper, we investigate how much contact resistance a FET or TFT can tolerate to allow the conventional current-voltage equations, which is derived for no contact resistance. We contend that mobility in transistors with resistive contact can be underestimated with the presence of the injection barrier, whereas mobility in transistors with gated Schottky contact can be overestimated by more than 10 times. The latter phenomenon occurs even in long-channel devices, and it becomes more severe when using low-k dielectrics. This is because the band bending and injection barrier experience a complicated evolution on account of electrostatic doping in the semiconducting layer; thus, they do not follow a capacitance approximation. When the band bending is weak, the accumulation is as weak as that in the subthreshold regime. Accordingly, the carrier concentration nonlinearly increases with the gate field. This mechanism can occur with or without exhibiting the "kink" feature in the transfer curves, which has been suggested as the signature of overestimation. For precision, carrier mobility should be presented against gate voltage and should be examined by other recommended extraction methods.

Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature

NASA Astrophysics Data System (ADS)

Yıldırım, M.; Şahin, C.; Altındal, Ş.; Durmuş, P.

2017-03-01

An Au/Bi4Ti3O12/ n-Si Schottky barrier diode (SBD) was fabricated with a 51 nm Bi4Ti3O12 interfacial layer. Admittance measurements of the fabricated SBD were carried out in the bias voltage ( V) range of -4 V and 6 V. Capacitance ( C) and conductance ( G/ω) measurements were carried out in a wide temperature range of 120-380 K so that temperature effects on electrical and dielectric properties of the SBD were investigated. Main electrical parameters were extracted from reverse bias C -2- V plots. It was found that variance of electrical and dielectric parameters of the SBD with temperature is basically different for low and high temperature regions. A fair number (˜1012 eV-1 cm-2) was obtained for surface states ( N ss); however, N ss first decreased then increased with temperature. This result was associated with increased defects with temperature and higher activation energy in the high temperature region. Dielectric parameters of the SBD were also extracted and the dielectric constant of SBD was found as ˜10 at room temperature. Application of modulus formalism to the admittance data revealed temperature-activated dielectric relaxation at 340 K. Results showed that the temperature has considerable effects on electrical and dielectric properties of Au/Bi4Ti3O12/ n-Si SBD.

Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

DOEpatents

Weihs, Timothy P.; Barbee, Jr., Troy W.

2002-01-01

Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

Nitrogen-doped mesoporous carbons for high performance supercapacitors

NASA Astrophysics Data System (ADS)

Wu, Kai; Liu, Qiming

2016-08-01

The mesoporous carbons have been synthesized by using α-D(+)-Glucose, D-Glucosamine hydrochloride or their mixture as carbon precursors and mesoporous silicas (SBA-15 or MCF) as hard templates. The as-prepared products show a large pore volume (0.59-0.97 cm3 g-1), high surface areas (352.72-1152.67 m2 g-1) and rational nitrogen content (ca. 2.5-3.9 wt.%). The results of electrochemical tests demonstrate that both heteroatom doping and suitable pore structure play a decisive role in the performance of supercapacitors. The representative sample of SBA-15 replica obtained using D-Glucosamine hydrochloride only exhibits high specific capacitance (212.8 F g-1 at 0.5 A g-1) and good cycle durability (86.1% of the initial capacitance after 2000 cycles) in 6 M KOH aqueous electrolyte, which is attributed to the contribution of double layer capacitance and pseudo-capacitance. The excellent electrochemical performance makes it a promising electrode material for supercapacitors.

Resonant capacitive MEMS acoustic emission transducers

NASA Astrophysics Data System (ADS)

Ozevin, D.; Greve, D. W.; Oppenheim, I. J.; Pessiki, S. P.

2006-12-01

We describe resonant capacitive MEMS transducers developed for use as acoustic emission (AE) detectors, fabricated in the commercial three-layer polysilicon surface micromachining process (MUMPs). The 1 cm square device contains six independent transducers in the frequency range between 100 and 500 kHz, and a seventh transducer at 1 MHz. Each transducer is a parallel plate capacitor with one plate free to vibrate, thereby causing a capacitance change which creates an output signal in the form of a current under a dc bias voltage. With the geometric proportions we employed, each transducer responds with two distinct resonant frequencies. In our design the etch hole spacing was chosen to limit squeeze film damping and thereby produce an underdamped vibration when operated at atmospheric pressure. Characterization experiments obtained by capacitance and admittance measurements are presented, and transducer responses to physically simulated AE source are discussed. Finally, we report our use of the device to detect acoustic emissions associated with crack initiation and growth in weld metal.

Tribotronic Tuning Diode for Active Analog Signal Modulation.

PubMed

Zhou, Tao; Yang, Zhi Wei; Pang, Yaokun; Xu, Liang; Zhang, Chi; Wang, Zhong Lin

2017-01-24

Realizing active interaction with external environment/stimuli is a great challenge for current electronics. In this paper, a tribotronic tuning diode (TTD) is proposed by coupling a variable capacitance diode and a triboelectric nanogenerator in free-standing sliding mode. When the friction layer is sliding on the device surface for electrification, a reverse bias voltage is created and applied to the diode for tuning the junction capacitance. When the sliding distance increases from 0 to 25 mm, the capacitance of the TTD decreases from about 39 to 8 pF. The proposed TTD has been integrated into analog circuits and exhibited excellent performances in frequency modulation, phase shift, and filtering by sliding a finger. This work has demonstrated tunable diode and active analog signal modulation by tribotronics, which has great potential to replace ordinary variable capacitance diodes in various practical applications such as signal processing, electronic tuning circuits, precise tuning circuits, active sensor networks, electronic communications, remote controls, flexible electronics, etc.

Outstanding supercapacitive properties of Mn-doped TiO2 micro/nanostructure porous film prepared by anodization method

PubMed Central

Ning, Xuewen; Wang, Xixin; Yu, Xiaofei; Zhao, Jianling; Wang, Mingli; Li, Haoran; Yang, Yang

2016-01-01

Mn-doped TiO2 micro/nanostructure porous film was prepared by anodizing a Ti-Mn alloy. The film annealed at 300 °C yields the highest areal capacitance of 1451.3 mF/cm2 at a current density of 3 mA/cm2 when used as a high-performance supercapacitor electrode. Areal capacitance retention is 63.7% when the current density increases from 3 to 20 mA/cm2, and the capacitance retention is 88.1% after 5,000 cycles. The superior areal capacitance of the porous film is derived from the brush-like metal substrate, which could greatly increase the contact area, improve the charge transport ability at the oxide layer/metal substrate interface, and thereby significantly enhance the electrochemical activities toward high performance energy storage. Additionally, the effects of manganese content and specific surface area of the porous film on the supercapacitive performance were also investigated in this work. PMID:26940546

Electrochemically Active Polyaniline (PANi) Coated Carbon Nanopipes and PANi Nanofibers Containing Composite.

PubMed

Ramana, G Venkata; Kumar, P Sampath; Srikanth, Vadali V S S; Padya, Balaji; Jain, P K

2015-02-01

A composite constituted by carbon nanopipes (CNPs) and polyaniline nanofibers (PANi NFs) is synthesized using in-situ chemical oxidative polymerization. Owing to its electrochemical activity the composite is found to be suitable as a working electrode material in hybrid type supercapacitors. Microstructural and phase analyses of the composite showed that (i) CNP surfaces are coated with PANi and (ii) PANi coated CNPs are distributed among PANi NFs. The composite shows an excellent electrochemical activity and a high specific capacitance of ~224.39 F/g. The electro-chemical activity of the composite is explicated in correlation with crystallinity, intrinsic oxidation state, and doping degree of PANi in the composite. The electro-chemical activity of the composite is also explicated in correlation with BET surface area and ordered meso-porosity pertaining to the composite. Charge/discharge curves indicate that the specific capacitance of the composite is a result of electric double-layer capacitance offered by CNPs and Faradaic pseudo capacitance offered by PANi NFs.

Highly conductive porous Na-embedded carbon nanowalls for high-performance capacitive deionization

NASA Astrophysics Data System (ADS)

Chang, Liang; Hu, Yun Hang

2018-05-01

Highly conductive porous Na-embedded carbon nanowalls (Na@C), which were recently invented, have exhibited excellent performance for dye-sensitized solar cells and electric double-layer capacitors. In this work, Na@C was demonstrated as an excellent electrode material for capacitive deionization (CDI). In a three-electrode configuration system, the specific capacity of the Na@C electrodes can achieve 306.4 F/g at current density of 0.2 A/g in 1 M NaCl, which is higher than that (235.2 F/g) of activated carbon (AC) electrodes. Furthermore, a high electrosorption capacity of 8.75 mg g-1 in 100 mg/L NaCl was obtained with the Na@C electrodes in a batch-mode capacitive deionization cell. It exceeds the electrosorption capacity (4.08 mg g-1) of AC electrodes. The Na@C electrode also showed a promising cycle stability. The excellent performance of Na@C electrode for capacitive deionization (CDI) can be attributed to its high electrical conductivity and large accessible surface area.

A novel low profile wireless flow sensor to monitor hemodynamic changes in cerebral aneurysm

NASA Astrophysics Data System (ADS)

Chen, Yanfei; Jankowitz, Brian T.; Cho, Sung Kwon; Chun, Youngjae

2015-03-01

A proof of concept of low-profile flow sensor has been designed, fabricated, and subsequently tested to demonstrate its feasibility for monitoring hemodynamic changes in cerebral aneurysm. The prototype sensor contains three layers, i.e., a thin polyurethane layer was sandwiched between two sputter-deposited thin film nitinol layers (6μm thick). A novel superhydrophilic surface treatment was used to create hemocompatible surface of thin nitinol electrode layers. A finite element model was conducted using ANSYS Workbench 15.0 Static Structural to optimize the dimensions of flow sensor. A computational fluid dynamics calculations were performed using ANSYS Workbench Fluent to assess the flow velocity patterns within the aneurysm sac. We built a test platform with a z-axis translation stage and an S-beam load cell to compare the capacitance changes of the sensors with different parameters during deformation. Both LCR meter and oscilloscope were used to measure the capacitance and the resonant frequency shifts, respectively. The experimental compression tests demonstrated the linear relationship between the capacitance and applied compression force and decreasing the length, width and increasing the thickness improved the sensor sensitivity. The experimentally measured resonant frequency dropped from 12.7MHz to 12.48MHz, indicating a 0.22MHz shift with 200g ( 2N) compression force while the theoretical resonant frequency shifted 0.35MHz with 50g ( 0.5N). Our recent results demonstrated a feasibility of the low-profile flow sensor for monitoring haemodynamics in cerebral aneurysm region, as well as the efficacy of the use of the surface treated thin film nitinol for the low-profile sensor materials.

Two-dimensional profiling of carriers in terahertz quantum cascade lasers using calibrated scanning spreading resistance microscopy and scanning capacitance microscopy.

PubMed

Dhar, R S; Ban, D

2013-07-01

The distribution of charge carriers inside the active region of a terahertz (THz) quantum cascade laser (QCL) has been measured with scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). Individual quantum well-barrier modules with a 35.7-nm single module thickness in the active region of the device have been resolved for the first time using high-resolution SSRM and SCM techniques at room temperature. SSRM and SCM measurements on the quantum well-barrier structure were calibrated utilizing known GaAs dopant staircase samples. Doping concentrations derived from SSRM and SCM measurements were found to be in quantitative agreement with the designed average doping values of the n-type active region in the terahertz quantum cascade laser. The secondary ion mass spectroscopy provides a partial picture of internal device parameters, and we have demonstrated with our results the efficacy of uniting calibrated SSRM and SCM to delineate quantitatively the transverse cross-sectional structure of complex two-dimensional terahertz quantum cascade laser devices. © 2013 The Authors Journal of Microscopy © 2013 Royal Microscopical Society.

Preparation and characterisation of crystalline tris(acetylacetonato)Fe(III) films grown on p-Si substrate for dielectric applications

NASA Astrophysics Data System (ADS)

Dakhel, A. A.; Ali-Mohamed, A. Y.

2007-02-01

Thin tris(acetylacetonato)iron(III) films were prepared by sublimation in vacuum on glass and p-Si substrates. Then comprehensive studies of X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, AC-conductivity, and dielectric permittivity as a function of frequency and temperature have been performed. The prepared films show a polycrystalline of orthorhombic structure. The optical absorption spectrum of the film was identical with that of the bulk powder layer. For electrical measurements of the complex as insulator, sample in form of metal insulator semiconductor (MIS) structure was prepared and characterised by the measurement of the capacitance and AC-conductance as a function of gate voltage. From those measurements, the state density Dit at insulator/semiconductor interface and the density of the fixed charges in the complex film were determined. It was found that Dit was of order 1010 eV-1/cm2 and the surface charge density in the insulator film was of order 1010 cm-2. The frequency dependence of the electrical conductivity and dielectric properties of MIS structures were studied at room temperature. It was observed that the experimental data follow the correlated barrier-hopping (CBH) model, from which the fundamental absorption edge, the cut off hopping distance, and other parameters of the model were determined. It was found that the capacitance of the complex increases as temperature increases. Generally, the present study shows that the tris(acetylacetonato)iron(III) films grown on p-Si is a promising candidate for low-k dielectric applications, it displays low-k value around 2.0.

High-energy asymmetric supercapacitors based on free-standing hierarchical Co-Mo-S nanosheets with enhanced cycling stability.

PubMed

Balamurugan, Jayaraman; Li, Chao; Peera, Shaik Gouse; Kim, Nam Hoon; Lee, Joong Hee

2017-09-21

Layered transition metal sulfides (TMS) are emerging as advanced materials for energy storage and conversion applications. In this work, we report a facile and cost-effective anion exchange technique to fabricate a layered, multifaceted, free standing, ultra-thin ternary cobalt molybdenum sulfide nanosheet (Co-Mo-S NS) architecture grown on a 3D porous Ni foam substrate. The unique Co-Mo layered double hydroxides are first synthesized as precursors and consequently transformed into ultra-thin Co-Mo-S NS. When employed as an electrode for supercapacitors, the Co-Mo-S NS delivered an ultra-high specific capacitance of 2343 F g -1 at a current density of 1 mA cm -2 with tremendous rate capability and extraordinary cycling performance (96.6% capacitance retention after 20 000 cycles). Furthermore, assembled Co-Mo-S/nitrogen doped graphene nanosheets (NGNS) in an asymmetric supercapacitor (ASC) device delivered an excellent energy density of 89.6 Wh kg -1 , an amazing power density of 20.07 kW kg -1 , and superior cycling performance (86.8% capacitance retention after 50 000 cycles). Such exceptional electrochemical performance of Co-Mo-S NS is ascribed to the good electrical contact with the 3D Ni foam, ultra-high contact area with the electrolyte, and enhanced architectural softening during the charging/discharging process. It is expected that the fabricated, unique, ultra-thin Co-Mo-S NS have great potential for future energy storage devices.

Estimation of carrier mobility and charge behaviors of organic semiconductor films in metal-insulator-semiconductor diodes consisting of high-k oxide/organic semiconductor double layers

NASA Astrophysics Data System (ADS)

Chosei, Naoya; Itoh, Eiji

2018-02-01

We have comparatively studied the charge behaviors of organic semiconductor films based on charge extraction by linearly increasing voltage in a metal-insulator-semiconductor (MIS) diode structure (MIS-CELIV) and by classical capacitance-voltage measurement. The MIS-CELIV technique allows the selective measurement of electron and hole mobilities of n- and p-type organic films with thicknesses representative of those of actual devices. We used an anodic oxidized sputtered Ta or Hf electrode as a high-k layer, and it effectively blocked holes at the insulator/semiconductor interface. We estimated the hole mobilities of the polythiophene derivatives regioregular poly(3-hexylthiophene) (P3HT) and poly(3,3‧‧‧-didodecylquarterthiophene) (PQT-12) before and after heat treatment in the ITO/high-k/(thin polymer insulator)/semiconductor/MoO3/Ag device structure. The hole mobility of PQT-12 was improved from 1.1 × 10-5 to 2.1 × 10-5 cm2 V-1 s-1 by the heat treatment of the device at 100 °C for 30 min. An almost two orders of magnitude higher mobility was obtained in MIS diodes with P3HT as the p-type layer. We also determined the capacitance from the displacement current in MIS diodes at a relatively low-voltage sweep, and it corresponded well to the classical capacitance-voltage and frequency measurement results.

Enhancement of two dimensional electron gas concentrations due to Si{sub 3}N{sub 4} passivation on Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure: strain and interface capacitance analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dinara, Syed Mukulika, E-mail: smdinara.iit@gmail.com; Jana, Sanjay Kr.; Ghosh, Saptarsi

2015-04-15

Enhancement of two dimensional electron gas (2DEG) concentrations at Al{sub 0.3}Ga{sub 0.7}N/GaN hetero interface after a-Si{sub 3}N{sub 4} (SiN) passivation has been investigated from non-destructive High Resolution X-ray Diffraction (HRXRD) analysis, depletion depth and capacitance-voltage (C-V) profile measurement. The crystalline quality and strained in-plane lattice parameters of Al{sub 0.3}Ga{sub 0.7}N and GaN were evaluated from double axis (002) symmetric (ω-2θ) diffraction scan and double axis (105) asymmetric reciprocal space mapping (DA RSM) which revealed that the tensile strain of the Al{sub 0.3}Ga{sub 0.7}N layer increased by 15.6% after SiN passivation. In accordance with the predictions from theoretical solution of Schrödinger-Poisson’smore » equations, both electrochemical capacitance voltage (ECV) depletion depth profile and C-V characteristics analyses were performed which implied effective 9.5% increase in 2DEG carrier density after passivation. The enhancement of polarization charges results from increased tensile strain in the Al{sub 0.3}Ga{sub 0.7}N layer and also due to the decreased surface states at the interface of SiN/Al{sub 0.3}Ga{sub 0.7}N layer, effectively improving the carrier confinement at the interface.« less

Large-Scale Integration of Solid-State Microfluidic Valves With No Moving Parts

DTIC Science & Technology

2005-01-01

compact and diffuse layer is called outer Helmholtz plane ( OHP ). Potential drop across the diffusion layer is called the zeta potential, ζ. As the...Gouy-Chapman model. This is shown in Fig. 3. The plane at x2 is called the outer Helmholtz plane ( OHP ). Then the total double layer capacitance Cd...Enhanced Electro-Osmotic Pumping With Liquid Bridge and Field Effect Flow Rectification, ” Presented in IEEE MEMS 2004 Conference, Maastricht, The

Nitrogen/Sulfur-Codoped Carbon Materials from Chitosan for Supercapacitors

NASA Astrophysics Data System (ADS)

Li, Mei; Han, Xianlong; Chang, Xiaoqing; Yin, Wenchao; Ma, Jingyun

2016-08-01

d-Methionine and chitosan have been used for fabrication of nitrogen/sulfur-codoped carbon materials by a hydrothermal process followed by carbonization at 750°C for 3 h. The as-prepared carbon materials showed enhanced electrochemical performance, combining electrical double-layer capacitance with pseudocapacitance owing to the doping with sulfur and nitrogen. The specific capacitance of the obtained carbon material reached 135 F g-1 at current density of 1 A g-1, which is much higher than undoped chitosan (67 F g-1). The capacitance retention of the carbon material was almost 97.2% after 5000 cycles at current density of 1 A g-1. With such improved electrochemical performance, the nitrogen/sulfur-codoped carbon material may have promising potential for use in energy-storage electrodes of supercapacitors.

The mechanism of the effect of a plasma layer with negative permittivity on the antenna radiation field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chunsheng, E-mail: wangcs@hit.edu.cn; Liu, Hui; Jiang, Binhao

A model of a plasma–antenna system is developed to study the mechanism of the effect of the plasma layer on antenna radiation. Results show a plasma layer with negative permittivity is inductive, and thus affects the phase difference between electric and magnetic fields. In the near field of antenna radiation, a plasma layer with proper parameters can compensate the capacitivity of the vacuum and enhance the radiation power. In the far field of antenna radiation, the plasma layer with negative permittivity increases the inductivity of the vacuum and reduces the radiation power.

Epitaxial thin films

DOEpatents

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

Noise characteristics analysis of short wave infrared InGaAs focal plane arrays

NASA Astrophysics Data System (ADS)

Yu, Chunlei; Li, Xue; Yang, Bo; Huang, Songlei; Shao, Xiumei; Zhang, Yaguang; Gong, Haimei

2017-09-01

The increasing application of InGaAs short wave infrared (SWIR) focal plane arrays (FPAs) in low light level imaging requires ultra-low noise FPAs. This paper presents the theoretical analysis of FPA noise, and point out that both dark current and detector capacitance strongly affect the FPA noise. The impact of dark current and detector capacitance on FPA noise is compared in different situations. In order to obtain low noise performance FPAs, the demand for reducing detector capacitance is higher especially when pixel pitch is smaller, integration time is shorter, and integration capacitance is larger. Several InGaAs FPAs were measured and analyzed, the experiments' results could be well fitted to the calculated results. The study found that the major contributor of FPA noise is coupled noise with shorter integration time. The influence of detector capacitance on FPA noise is more significant than that of dark current. To investigate the effect of detector performance on FPA noise, two kinds of photodiodes with different concentration of the absorption layer were fabricated. The detectors' performance and noise characteristics were measured and analyzed, the results are consistent with that of theoretical analysis.

Corrosion-resistant multilayer structures with improved reflectivity

DOEpatents

Soufli, Regina; Fernandez-Perea, Monica; Robinson, Jeff C.

2013-04-09

In one general embodiment, a thin film structure includes a substrate; a first corrosion barrier layer above the substrate; a reflective layer above the first corrosion barrier layer, wherein the reflective layer comprises at least one repeating set of sub-layers, wherein one of the sub-layers of each set of sub-layers being of a corrodible material; and a second corrosion barrier layer above the reflective layer. In another general embodiment, a system includes an optical element having a thin film structure as recited above; and an image capture or spectrometer device. In a further general embodiment, a laser according to one embodiment includes a light source and the thin film structure as recited above.

Single-Band and Dual-Band Infrared Detectors

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor); Soibel, Alexander (Inventor); Nguyen, Jean (Inventor); Khoshakhlagh, Arezou (Inventor)

2015-01-01

Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Single-Band and Dual-Band Infrared Detectors

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor); Soibel, Alexander (Inventor); Nguyen, Jean (Inventor); Khoshakhlagh, Arezou (Inventor)

2017-01-01

Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Molecular dynamics simulation studies of ionic liquid electrolytes for electric double layer capacitors

NASA Astrophysics Data System (ADS)

Hu, Zongzhi

Molecular Dynamics (MD) simulation has been performed on various Electric Double Layer Capacitors (EDLCs) systems with different Room Temperature Ionic Liquids (RTILs) as well as different structures and materials of electrodes using a computationally efficient, low cost, united atom (UA)/explicit atom (EA) force filed. MD simulation studies on two 1-butyl-3-methylimidazolium (BMIM) based RTILs, i.e., [BMIM][BF4] and [BMIM][PF6], have been conducted on both atomic flat and corrugated graphite as well as (001) and (011) gold electrode surfaces to understand the correlations between the Electric Double Layer (EDL) structure and their corresponding differential capacitance (DC). Our MD simulations have strong agreement with some experimental data. The structures of electrodes also have a strong effect on the capacitance of EDLCs. MD simulations have been conducted on RTILs of N-methyl-N- propylpyrrolidinium [pyr13] and bis(fluorosulfonyl)imide (FSI) as well as [BMIM][PF6] on both curvature electrodes (fullerenes, nanotube, nanowire) and atomic flat electrode surfaces. It turns out that the nanowire electrode systems have the largest capacitance, following by fullerene systems. Nanotube electrode systems have the smallest capacitance, but they are still larger than that of atomically flat electrode system. Also, RTILs with slightly different chemical structure such as [Cnmim], n = 2, 4, 6, and 8, FSI and bis(trifluoromethylsulfonyl)imide (TFSI), have been examined by MD simulation on both flat and nonflat graphite electrode surfaces to study the effect of cation and anion's chemical structures on EDL structure and DC. With prismatic (nonflat) graphite electrodes, a transition from a bell-shape to a camel-shape DC dependence on electrode potential was observed with increase of the cation alkyl tail length for FSI systems. In contrast, the [Cnmim][TFSI] ionic liquids generated only a camel-shape DC on the rough surface regardless of the length of alkyl tail.

Fabrication and Analysis of a Selectively Contacted Dual Channel High Electron Mobility Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Khanna, Ravi

1992-01-01

A selectively contacted dual-channel high electron mobility transistor (SCD-CHEMT) has been designed, fabricated, and electrically characterized, in order to better understand the properties of two layers of two-dimensional electron gases (2DEGs) confined within a quantum well. The 2DEGs are placed under a Schottky barrier control gate which modulates their sheet charge densities, and by use of auxiliary Schottky barrier gates and two levels of ohmic contacts, electrical contacts to the individual channels in which each 2DEG resides is achieved. The design of the dual channel FET structure, and its practical realization by recourse to process development and fabrication are described, as are the techniques, results, and interpretations of electrical characterizations used to analyze the completed device. Critical fabrication procedures involving photolithography, etching, deposition, shallow and deep ohmic contact formation, and gate formation are developed, and a simple technique to reduce gate leakage by photo-oxidation is demonstrated. Analysis of the completed device is performed using one-dimensional band diagram simulations, magnetotransport and electrical measurements. Magnetotransport studies establish the existence of two 2DEGs within the quantum well at 4K. Drain current vs. drain voltage, and transconductance vs. gate voltage characteristics at room temperature confirm the presence of two 2DEGs and show that current flow between them occurs easily at room temperature. Carrier electron mobility profiles are taken of the 2DEGs and show that the lower 2DEG has a mobility comparable to that of a 2DEG formed at a normal interface, indicating that the "inverted interface problem" has been overcome. Capacitance vs. gate voltage measurements are taken, which are consistent with a simple device model consisting of gate depletion and interelectrode parasitic capacitances. It is concluded from the analysis that the dual channel system resides in three basic states: (1) Both channels are occupied by 2DEGs or (2) The upper channel is depleted, or (3) Both channels depleted. Finally, increase in isolation between the two 2DEGs is dramatically demonstrated at 77K by the drain current vs. drain voltage, and transconductance vs. gate voltage characteristics.

Electric Pulse Discharge Activated Carbon Supercapacitors for Transportation Application

NASA Astrophysics Data System (ADS)

Nayak, Subhadarshi; Agrawal, Jyoti

2012-03-01

ScienceTomorrow is developing a high-speed, low-cost process for synthesizing high-porosity electrodes for electrochemical double-layer capacitors. Four types of coal (lignite, subbituminous, bituminous, and anthracite) were used as precursor materials for spark discharge activation with multiscale porous structure. The final porosity and pore distribution depended, among other factors, on precursor type. The high gas content in low-grade carbon resulted in mechanical disintegration, whereas high capacitance was attained in higher-grade coal. The properties, including capacitance, mechanical robustness, and internal conductivity, were excellent when the cost is taken into consideration.

Stern potential and Debye length measurements in dilute ionic solutions with electrostatic force microscopy.

PubMed

Kumar, Bharat; Crittenden, Scott R

2013-11-01

We demonstrate the ability to measure Stern potential and Debye length in dilute ionic solution with atomic force microscopy. We develop an analytic expression for the second harmonic force component of the capacitive force in an ionic solution from the linearized Poisson-Boltzmann equation. This allows us to calibrate the AFM tip potential and, further, obtain the Stern potential of sample surfaces. In addition, the measured capacitive force is independent of van der Waals and double layer forces, thus providing a more accurate measure of Debye length.