The cataphoretic emitter effect exhibited in high intensity discharge lamp electrodes

NASA Astrophysics Data System (ADS)

Mentel, Juergen

2018-01-01

A mono-layer of atoms, electropositive with respect to the substrate atoms, forms a dipole layer, reducing its work function. Such a layer is generated by diffusion of emitter material from the interior of the substrate, by vapour deposition or by deposition of emitter material onto arc electrodes by cataphoresis. This cataphoretic emitter effect is investigated within metal halide lamps with transparent YAG ceramic burners, and within model lamps. Within the YAG lamps, arcs are operated with switched-dc current between rod shaped tungsten electrodes in high pressure Hg vapour seeded with metal iodides. Within the model lamps, dc arcs are operated between rod-shaped tungsten electrodes—one doped—in atmospheric pressure Ar. Electrode temperatures are determined by 1λ -pyrometry, combined with simulation of the electrode heat balance. Plasma temperatures, atom and ion densities of emitter material are determined by emission and absorption spectroscopy. Phase resolved measurements in YAG lamps seeded with CeI3, CsI, DyI3, TmI3 and LaI3 show, within the cathodic half period, a reduction of the electrode temperature and an enhanced metal ion density in front of the electrode, and an opposite behavior after phase reversal. With increasing operating frequency, the state of the cathode overlaps onto the anodic phase—except for Cs, being low in adsorption energy. Generally, the phase averaged electrode tip temperature is reduced by seeding a lamp with emitter material; its height depends on admixtures. Measurements at tungsten electrodes doped with ThO2, La2O3 and Ce2O3 within the model lamp show that evaporated emitter material is redeposited by an emitter ion current onto the electrode surface. It reduces the work function of tungsten cathodes above the evaporation temperature of the emitter material, too; and also of cold anodes, indicating a field reversal in front of them. The formation of an emitter spot at low cathode temperature and high emitter material density is traced back to a locally reduced work function generated by a locally enhanced emitter ion current density.

Emittance Measurements Relevant to a 250 W(sub t) Class RTPV Generator for Space Exploration

NASA Technical Reports Server (NTRS)

Wolford, Dave; Chubb, Donald; Clark, Eric; Pal, Anna Maria; Scheiman, Dave; Colon, Jack

2009-01-01

A proposed 250 Wt Radioisotope Thermophotovoltaic (RTPV) power system for utilization in lunar exploration and the subsequent exploration of Mars is described. Details of emitter selection are outlined for use in a maintenance free power supply that is productive over a 14-year mission life. Thorough knowledge of a material s spectral emittance is essential for accurate modeling of the RTPV system. While sometimes treated as a surface effect, emittance involves radiation from within a material. This creates a complex thermal gradient which is a combination of conductive and radiative heat transfer mechanisms. Emittance data available in the literature is a valuable resource but it is particular to the test sample s physical characteristics and the test environment. Considerations for making spectral emittance measurements relevant to RTPV development are discussed. Measured spectral emittance data of refractory emitter materials is given. Planned measurement system modifications to improve relevance to the current project are presented.

Triplet diffusion leads to triplet-triplet annihilation in organic phosphorescent emitters

NASA Astrophysics Data System (ADS)

Zhang, Yifan; Forrest, Stephen R.

2013-12-01

In organic materials, triplet-triplet annihilation (TTA) can be dominated by triplet diffusion or triplet-to-triplet energy transfer. Here, we discuss the diffusion and transfer dominated mechanisms in the context of photoluminescence (PL) transient measurements from thin films of archetype phosphorescent organic light emitters based on Ir and Pt complexes. We find that TTA in these emitters is controlled by diffusion due to a Dexter-type exchange interaction, suggesting triplet radiative decay and TTA are independent processes. Minimizing the PL and absorption spectral overlap in phosphorescent emitters can lead to a significantly decreased TTA rate, and thus suppressed efficiency roll-off in phosphorescent organic light emitting diodes at high brightness.

Photonically engineered incandescent emitter

DOEpatents

Gee, James M.; Lin, Shawn-Yu; Fleming, James G.; Moreno, James B.

2003-08-26

A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.

Photonically Engineered Incandescent Emitter

DOEpatents

Gee, James M.; Lin, Shawn-Yu; Fleming, James G.; Moreno, James B.

2005-03-22

A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.

Solar absorptance and thermal emittance of some common spacecraft thermal-control coatings

NASA Technical Reports Server (NTRS)

Henninger, J. H.

1984-01-01

Solar absorptance and thermal emittance of spacecraft materials are critical parameters in determining spacecraft temperature control. Because thickness, surface preparation, coatings formulation, manufacturing techniques, etc. affect these parameters, it is usually necessary to measure the absorptance and emittance of materials before they are used. Absorptance and emittance data for many common types of thermal control coatings, are together with some sample spectral data curves of absorptance. In some cases for which ultraviolet and particle radiation data are available, the degraded absorptance and emittance values are also listed.

Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers.

PubMed

Choi, Sumin; Tran, Toan Trong; Elbadawi, Christopher; Lobo, Charlene; Wang, Xuewen; Juodkazis, Saulius; Seniutinas, Gediminas; Toth, Milos; Aharonovich, Igor

2016-11-02

Hexagonal boron nitride is a wide-band-gap van der Waals material that has recently emerged as a promising platform for quantum photonics experiments. In this work, we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of micrometers wide) of hexagonal boron nitride. The emitters can be activated in as-grown hexagonal boron nitride by electron irradiation or high-temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at the edges of the flakes, unlike most luminescent point defects in three-dimensional materials. Our results constitute an important step on the roadmap of deploying hexagonal boron nitride in nanophotonics applications.

Ultra-high Temperature Emittance Measurements for Space and Missile Applications

NASA Technical Reports Server (NTRS)

Rogers, Jan; Crandall, David

2009-01-01

Advanced modeling and design efforts for many aerospace components require high temperature emittance data. Applications requiring emittance data include propulsion systems, radiators, aeroshells, heatshields/thermal protection systems, and leading edge surfaces. The objective of this work is to provide emittance data at ultra-high temperatures. MSFC has a new instrument for the measurement of emittance at ultra-high temperatures, the Ultra-High Temperature Emissometer System (Ultra-HITEMS). AZ Technology Inc. developed the instrument, designed to provide emittance measurements over the temperature range 700-3500K. The Ultra-HITEMS instrument measures the emittance of samples, heated by lasers, in vacuum, using a blackbody source and a Fourier Transform Spectrometer. Detectors in a Nicolet 6700 FT-IR spectrometer measure emittance over the spectral range of 0.4-25 microns. Emitted energy from the specimen and output from a Mikron M390S blackbody source at the same temperature with matched collection geometry are measured. Integrating emittance over the spectral range yields the total emittance. The ratio provides a direct measure of total hemispherical emittance. Samples are heated using lasers. Optical pyrometry provides temperature data. Optical filters prevent interference from the heating lasers. Data for Inconel 718 show excellent agreement with results from literature and ASTM 835. Measurements taken from levitated spherical specimens provide total hemispherical emittance data; measurements taken from flat specimens mounted in the chamber provide near-normal emittance data. Data from selected characterization studies will be presented. The Ultra-HITEMS technique could advance space and missile technologies by advancing the knowledge base and the technology readiness level for ultra-high temperature materials.

High-Performance Field Emission from a Carbonized Cork.

PubMed

Lee, Jeong Seok; Lee, Hak Jun; Yoo, Jae Man; Kim, Taewoo; Kim, Yong Hyup

2017-12-20

To broaden the range of application of electron beams, low-power field emitters are needed that are miniature and light. Here, we introduce carbonized cork as a material for field emitters. The light natural cork becomes a graphitic honeycomb upon carbonization, with the honeycomb cell walls 100-200 nm thick and the aspect ratio larger than 100, providing an ideal structure for the field electron emission. Compared to nanocarbon field emitters, the cork emitter produces a high current density and long-term stability with a low turn-on field. The nature of the cork material makes it quite simple to fabricate the emitter. Furthermore, any desired shape of the emitter tailored for the final application can easily be prepared for point, line, or planar emission.

FAST TRACK COMMUNICATION Host-free, yellow phosphorescent material in white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Meng-Ting; Chu, Miao-Tsai; Lin, Jin-Sheng; Tseng, Mei-Rurng

2010-11-01

A white organic light-emitting diode (WOLED) with a high power efficiency has been demonstrated by dispersing a host-free, yellow phosphorescent material in between double blue phosphorescent emitters. The device performance achieved a comparable value to that of using a complicated host-guest doping system to form the yellow emitter in WOLEDs. Based on this device concept as well as the molecular engineering of blue phosphorescent host material and light-extraction film, a WOLED with a power efficiency of 65 lm W-1 at a practical brightness of 1000 cd m-2 with Commission Internationale d'Echariage coordinates (CIEx,y) of (0.37, 0.47) was achieved.

Measurements of optical properties of some molten oxides

NASA Astrophysics Data System (ADS)

Nason, D. O.; Yen, C. T.; Tiller, W. A.

1990-11-01

A method based on a fine-focussed optical laser has been developed to measure the spectral reflectance and the transmittance of small ( ∽ 1 mm) liquid or single crystal materials. The measured normal spectral emittance for 633 nm light is about 0.9 for several molten refractory oxides, 0.8 for lithium niobate and 0.7 for molten sapphire. Sapphire and YAG experience a several-fold increase in emittance on melting. The absorption coefficient and the thickness for opaqueness are calculated and some consequences of the partial transparency of small hot materials, when their temperatures are measured by optical pyrometry, are discussed.

Bi-alkali antimonide photocathode growth: An X-ray diffraction study

DOE PAGES

Schubert, Susanne; Wong, Jared; Feng, Jun; ...

2016-07-21

Bi-alkali antimonide photocathodes are one of the best known sources of electrons for high current and/or high bunch charge applications like Energy Recovery Linacs or Free Electron Lasers. Despite their high quantum efficiency in visible light and low intrinsic emittance, the surface roughness of these photocathodes prohibits their use as low emittance cathodes in high accelerating gradient superconducting and normal conducting radio frequency photoguns and limits the minimum possible intrinsic emittance near the threshold. Also, the growth process for these materials is largely based on recipes obtained by trial and error and is very unreliable. In this paper, using X-raymore » diffraction, we investigate the different structural and chemical changes that take place during the growth process of the bi-alkali antimonide material K 2 CsSb. Our measurements give us a deeper understanding of the growth process of alkali-antimonide photocathodes allowing us to optimize it with the goal of minimizing the surface roughness to preserve the intrinsic emittance at high electric fields and increasing its reproducibility.« less

Determining Directional Emittance With An Infrared Imager

NASA Technical Reports Server (NTRS)

Daryabeigi, Kamran; Alderfer, David W.; Wright, Robert E., Jr.; Puram, Chith K.

1994-01-01

Directional emittances of flat specimen of smooth-surfaced, electrically nonconductive material at various temperatures computed from measurements taken by infrared radiometric imager operating in conjunction with simple ancillary equipment. Directional emittances useful in extracting detailed variations of surface temperatures from infrared images of curved, complexly shaped other specimens of same material. Advantages: simplification of measurement procedure and reduction of cost.

Highly efficient and stable organic light-emitting diodes with a greatly reduced amount of phosphorescent emitter

PubMed Central

Fukagawa, Hirohiko; Shimizu, Takahisa; Kamada, Taisuke; Yui, Shota; Hasegawa, Munehiro; Morii, Katsuyuki; Yamamoto, Toshihiro

2015-01-01

Organic light-emitting diodes (OLEDs) have been intensively studied as a key technology for next-generation displays and lighting. The efficiency of OLEDs has improved markedly in the last 15 years by employing phosphorescent emitters. However, there are two main issues in the practical application of phosphorescent OLEDs (PHOLEDs): the relatively short operational lifetime and the relatively high cost owing to the costly emitter with a concentration of about 10% in the emitting layer. Here, we report on our success in resolving these issues by the utilization of thermally activated delayed fluorescent materials, which have been developed in the past few years, as the host material for the phosphorescent emitter. Our newly developed PHOLED employing only 1 wt% phosphorescent emitter exhibits an external quantum efficiency of over 20% and a long operational lifetime of about 20 times that of an OLED consisting of a conventional host material and 1 wt% phosphorescent emitter. PMID:25985084

SU-C-204-01: A Fast Analytical Approach for Prompt Gamma and PET Predictions in a TPS for Proton Range Verification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kroniger, K; Herzog, M; Landry, G

2015-06-15

Purpose: We describe and demonstrate a fast analytical tool for prompt-gamma emission prediction based on filter functions applied on the depth dose profile. We present the implementation in a treatment planning system (TPS) of the same algorithm for positron emitter distributions. Methods: The prediction of the desired observable is based on the convolution of filter functions with the depth dose profile. For both prompt-gammas and positron emitters, the results of Monte Carlo simulations (MC) are compared with those of the analytical tool. For prompt-gamma emission from inelastic proton-induced reactions, homogeneous and inhomogeneous phantoms alongside with patient data are used asmore » irradiation targets of mono-energetic proton pencil beams. The accuracy of the tool is assessed in terms of the shape of the analytically calculated depth profiles and their absolute yields, compared to MC. For the positron emitters, the method is implemented in a research RayStation TPS and compared to MC predictions. Digital phantoms and patient data are used and positron emitter spatial density distributions are analyzed. Results: Calculated prompt-gamma profiles agree with MC within 3 % in terms of absolute yield and reproduce the correct shape. Based on an arbitrary reference material and by means of 6 filter functions (one per chemical element), profiles in any other material composed of those elements can be predicted. The TPS implemented algorithm is accurate enough to enable, via the analytically calculated positron emitters profiles, detection of range differences between the TPS and MC with errors of the order of 1–2 mm. Conclusion: The proposed analytical method predicts prompt-gamma and positron emitter profiles which generally agree with the distributions obtained by a full MC. The implementation of the tool in a TPS shows that reliable profiles can be obtained directly from the dose calculated by the TPS, without the need of full MC simulation.« less

Mulifunctional Dendritic Emitter: Aggregation-Induced Emission Enhanced, Thermally Activated Delayed Fluorescent Material for Solution-Processed Multilayered Organic Light-Emitting Diodes

PubMed Central

Matsuoka, Kenichi; Albrecht, Ken; Yamamoto, Kimihisa; Fujita, Katsuhiko

2017-01-01

Thermally activated delayed fluorescence (TADF) materials emerged as promising light sources in third generation organic light-emitting diodes (OLED). Much effort has been invested for the development of small molecular TADF materials and vacuum process-based efficient TADF-OLEDs. In contrast, a limited number of solution processable high-molecular weight TADF materials toward low cost, large area, and scalable manufacturing of solution processed TADF-OLEDs have been reported so far. In this context, we report benzophenone-core carbazole dendrimers (GnB, n = generation) showing TADF and aggregation-induced emission enhancement (AIEE) properties along with alcohol resistance enabling further solution-based lamination of organic materials. The dendritic structure was found to play an important role for both TADF and AIEE activities in the neat films. By using these multifunctional dendritic emitters as non-doped emissive layers, OLED devices with fully solution processed organic multilayers were successfully fabricated and achieved maximum external quantum efficiency of 5.7%. PMID:28139768

Mulifunctional Dendritic Emitter: Aggregation-Induced Emission Enhanced, Thermally Activated Delayed Fluorescent Material for Solution-Processed Multilayered Organic Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Matsuoka, Kenichi; Albrecht, Ken; Yamamoto, Kimihisa; Fujita, Katsuhiko

2017-01-01

Thermally activated delayed fluorescence (TADF) materials emerged as promising light sources in third generation organic light-emitting diodes (OLED). Much effort has been invested for the development of small molecular TADF materials and vacuum process-based efficient TADF-OLEDs. In contrast, a limited number of solution processable high-molecular weight TADF materials toward low cost, large area, and scalable manufacturing of solution processed TADF-OLEDs have been reported so far. In this context, we report benzophenone-core carbazole dendrimers (GnB, n = generation) showing TADF and aggregation-induced emission enhancement (AIEE) properties along with alcohol resistance enabling further solution-based lamination of organic materials. The dendritic structure was found to play an important role for both TADF and AIEE activities in the neat films. By using these multifunctional dendritic emitters as non-doped emissive layers, OLED devices with fully solution processed organic multilayers were successfully fabricated and achieved maximum external quantum efficiency of 5.7%.

Effect of horizontal molecular orientation on triplet-exciton diffusion in amorphous organic films

NASA Astrophysics Data System (ADS)

Sawabe, T.; Takasu, I.; Yonehara, T.; Ono, T.; Yoshida, J.; Enomoto, S.; Amemiya, I.; Adachi, C.

2012-09-01

Triplet harvesting is a candidate technology for highly efficient and long-life white OLEDs, where green or red phosphorescent emitters are activated by the triplet-excitons diffused from blue fluorescent emitters. We examined two oxadiazole-based electron transport materials with different horizontal molecular orientation as a triplet-exciton diffusion layer (TDL) in triplet-harvesting OLEDs. The device characteristics and the transient electroluminescent analyses of the red phosphorescent emitter showed that the triplet-exciton diffusion was more effective in the highly oriented TDL. The results are ascribed to the strong orbital overlap between the oriented molecules, which provides rapid electron exchange (Dexter energy transfer) in the TDL.

Method of depositing multi-layer carbon-based coatings for field emission

DOEpatents

Sullivan, John P.; Friedmann, Thomas A.

1999-01-01

A novel field emitter device for cold cathode field emission applications, comprising a multi-layer resistive carbon film. The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials.

Method of depositing multi-layer carbon-based coatings for field emission

DOEpatents

Sullivan, J.P.; Friedmann, T.A.

1999-08-10

A novel field emitter device is disclosed for cold cathode field emission applications, comprising a multi-layer resistive carbon film. The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials. 8 figs.

Strong coupling of collection of emitters on hyperbolic meta-material

NASA Astrophysics Data System (ADS)

Biehs, Svend-Age; Xu, Chenran; Agarwal, Girish S.

2018-04-01

Recently, considerable effort has been devoted to the realization of a strong coupling regime of the radiation matter interaction in the context of an emitter at a meta surface. The strong interaction is well realized in cavity quantum electrodynamics, which also show that strong coupling is much easier to realize using a collection of emitters. Keeping this in mind, we study if emitters on a hyperbolic meta materials can yield a strong coupling regime. We show that strong coupling can be realized for densities of emitters exceeding a critical value. A way to detect strong coupling between emitters and hyperbolic metamaterials is to use the Kretschman-Raether configuration. The strong coupling appears as the splitting of the reflectivity dip. In the weak coupling regime, the dip position shifts. The shift and splitting can be used to sense active molecules at surfaces.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurmikko, Arto V

Synthesis of semiconductor nanomaterials by low-cost, solution-based methods is shown to lead to new classes of thin film light emitting materials. These materials have been integrated to demonstrative compact laser device testbeds to illustrate their potential for coherent emitters across the visible spectrum to disrupt established photonics technologies, particularly semiconductor lasers?

Rare Earth Doped High Temperature Ceramic Selective Emitters

NASA Technical Reports Server (NTRS)

Chubb, Donald L.; Pal, AnnaMarie; Patton, Martin O.; Jenkins, Phillip P.

1999-01-01

As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study develops a spectral emittance model for films of rare earth containing materials. Although there are several possible rare earth doped high temperature materials, this study was confined to rare earth aluminum garnets. Good agreement between experimental and theoretical spectral emittances was found for erbium, thulium and erbium-holmium aluminum garnets. Spectral emittances of these films are sensitive to temperature differences across the film. Emitter efficiency is also a sensitive function of temperature. For thulium aluminum garnet the efficiency is 0.38 at 1700 K but only 0.19 at 1262 K.

Efficient, deep-blue TADF-emitters for OLED display applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Volz, Daniel; Baumann, Thomas

2016-09-01

Currently, the mobile display market is strongly shifting towards AMOLED technology, in order to enable curved and flexible displays. This leads to a growing demand for highly efficient OLED emitters to reduce the power consumption and increase display resolution at the same time. While highly efficient green and red OLEDs already found their place in commercial OLED-displays, the lack of efficient blue emitters is still an issue. Consequently, the active area for blue is considerably larger than for green and red pixels, to make up for the lower efficiency. We intend to close this efficiency-gap with novel emitters based on thermally activated delayed fluorescence (TADF) technology. Compared to state-of-the-art fluorescent dopants, the efficiency of TADF-emitters is up to four times higher. At the same time, it is possible to design them in a way to maintain deep blue emission, i.e. CIE y < 0.2. These aspects are relevant to produce efficient high resolution AMOLED displays. Apart from these direct customer benefits, our TADF technology does not contain any rare elements, which allows for the fabrication of sustainable OLED technology. In this work, we highlight one of our recently developed blue TADF materials. Basic material properties as well as first device results are discussed. In a bottom-emitting device, a CIEx/CIEy coordinate of (0.16/0.17) was achieved with efficiency values close to 20% EQE.

Recent advances on organic blue thermally activated delayed fluorescence (TADF) emitters for organic light-emitting diodes (OLEDs)

PubMed Central

Bui, Thanh-Tuân; Goubard, Fabrice; Ibrahim-Ouali, Malika; Gigmes, Didier

2018-01-01

The design of highly emissive and stable blue emitters for organic light emitting diodes (OLEDs) is still a challenge, justifying the intense research activity of the scientific community in this field. Recently, a great deal of interest has been devoted to the elaboration of emitters exhibiting a thermally activated delayed fluorescence (TADF). By a specific molecular design consisting into a minimal overlap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) due to a spatial separation of the electron-donating and the electron-releasing parts, luminescent materials exhibiting small S1–T1 energy splitting could be obtained, enabling to thermally upconvert the electrons from the triplet to the singlet excited states by reverse intersystem crossing (RISC). By harvesting both singlet and triplet excitons for light emission, OLEDs competing and sometimes overcoming the performance of phosphorescence-based OLEDs could be fabricated, justifying the interest for this new family of materials massively popularized by Chihaya Adachi since 2012. In this review, we proposed to focus on the recent advances in the molecular design of blue TADF emitters for OLEDs during the last few years. PMID:29507635

Annual Progress Report of Research Activities that Occured in the Coordinated Science Laboratory for July 1, 1982 through Jun 30, 1983,

DTIC Science & Technology

1983-08-01

particular fabrication concerns, both the emitter and collector region were made of Al„ -Ga0 5As wide gap material. Devices with emitter area of 10 x 60...im and collector area of 50 x 60 (im exhi- bited current gains of 500 for a base doping of 10 cm and thickness of 500 A, and 1700 for a base...spreading over a large enough distance, it is usually necessary to heat the surface to a temperature at which not just diffusion, but also

A Physics-Based Heterojunction Bipolar Transistor Model for Integrated Circuit Simulation

DTIC Science & Technology

1993-12-01

Laverghetta, Practical Microwaves, IN, Howard W. Sams & Co., 1984. [56] C. R . Selvakumar , "A New Minority Carrier Lifetime Model for Heavily Doped GaAs...transistor common-emitter output conductance (S). gm Small-signal transconductance (S). r Reflection coefficient of a transmission line. ’Y Emitter...material and geometry parameters to equivalent circuit element values. Typically, the first step in 6 C RC Re + VWc- +B B ,a W’ COE ’IIc I R E Figure 1.7

Development of techniques and associated instrumentation for high temperature emissivity measurements

NASA Technical Reports Server (NTRS)

Cunnington, G. R.; Funai, A. I.

1972-01-01

The progress during the sixth quarterly period is reported on construction and assembly of a test facility to determine the high temperature emittance properties of candidate thermal protection system materials for the space shuttle. This facility will provide simulation of such reentry environment parameters as temperature, pressure, and gas flow rate to permit studies of the effects of these parameters on the emittance stability of the materials. Also reported are the completed results for emittance tests on a set of eight Rene 41 samples and one anodized titanium alloy sample which were tested at temperatures up to 1600 F in vacuum. The data includes calorimetric determinations of total hemispherical emittance, radiometric determinations of total and spectral normal emittance, and pre- and post-test room temperature reflectance measurements.

NCTM of liquids at high temperatures using polarization techniques

NASA Technical Reports Server (NTRS)

Krishnan, Shankar; Weber, J. K. Richard; Nordine, Paul C.; Schiffman, Robert A.

1990-01-01

Temperature measurement and control is extremely important in any materials processing application. However, conventional techniques for non-contact temperature measurement (mainly optical pyrometry) are very uncertain because of unknown or varying surface emittance. Optical properties like other properties change during processing. A dynamic, in-situ measurement of optical properties including the emittance is required. Intersonics is developing new technologies using polarized laser light scattering to determine surface emittance of freely radiating bodies concurrent with conventional optical pyrometry. These are sufficient to determine the true surface temperature of the target. Intersonics is currently developing a system called DAPP, the Division of Amplitude Polarimetric Pyrometer, that uses polarization information to measure the true thermodynamic temperature of freely radiating objects. This instrument has potential use in materials processing applications in ground and space based equipment. Results of thermophysical and thermodynamic measurements using laser reflection as a temperature measuring tool are presented. The impact of these techniques on thermophysical property measurements at high temperature is discussed.

Fuel elements of thermionic converters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hunter, R.L.; Gontar, A.S.; Nelidov, M.V.

1997-01-01

Work on thermionic nuclear power systems has been performed in Russia within the framework of the TOPAZ reactor program since the early 1960s. In the TOPAZ in-core thermionic convertor reactor design, the fuel element`s cladding is also the thermionic convertor`s emitter. Deformation of the emitter can lead to short-circuiting and is the primary cause of premature TRC failure. Such deformation can be the result of fuel swelling, thermocycling, or increased unilateral pressure on the emitter due to the release of gaseous fission products. Much of the work on TRCs has concentrated on preventing or mitigating emitter deformation by improving themore » following materials and structures: nuclear fuel; emitter materials; electrical insulators; moderator and reflector materials; and gas-exhaust device. In addition, considerable effort has been directed toward the development of experimental techniques that accurately mimic operational conditions and toward the creation of analytical and numerical models that allow operational conditions and behavior to be predicted without the expense and time demands of in-pile tests. New and modified materials and structures for the cores of thermionic NPSs and new fabrication processes for the materials have ensured the possibility of creating thermionic NPSs for a wide range of powers, from tens to several hundreds of kilowatts, with life spans of 5 to 10 years.« less

Voltage controlling mechanisms in low resistivity silicon solar cells: A unified approach

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Swartz, C. K.; Hart, R. E.; Godlewski, M. P.

1984-01-01

An experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices.

Voltage controlling mechanisms in low resistivity silicon solar cells - A unified approach

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Swartz, C. K.; Hart, R. E.; Godlewski, M. P.

1984-01-01

An experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices.

Real-time radionuclide identification in γ-emitter mixtures based on spiking neural network.

PubMed

Bobin, C; Bichler, O; Lourenço, V; Thiam, C; Thévenin, M

2016-03-01

Portal radiation monitors dedicated to the prevention of illegal traffic of nuclear materials at international borders need to deliver as fast as possible a radionuclide identification of a potential radiological threat. Spectrometry techniques applied to identify the radionuclides contributing to γ-emitter mixtures are usually performed using off-line spectrum analysis. As an alternative to these usual methods, a real-time processing based on an artificial neural network and Bayes' rule is proposed for fast radionuclide identification. The validation of this real-time approach was carried out using γ-emitter spectra ((241)Am, (133)Ba, (207)Bi, (60)Co, (137)Cs) obtained with a high-efficiency well-type NaI(Tl). The first tests showed that the proposed algorithm enables a fast identification of each γ-emitting radionuclide using the information given by the whole spectrum. Based on an iterative process, the on-line analysis only needs low-statistics spectra without energy calibration to identify the nature of a radiological threat. Copyright © 2015 Elsevier Ltd. All rights reserved.

High temperature bias line stabilized current sources

DOEpatents

Patterson, III, Raymond B.

1984-01-01

A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower.

High temperature bias line stabilized current sources

DOEpatents

Patterson, R.B. III.

1984-09-11

A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower. 1 fig.

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

NASA Astrophysics Data System (ADS)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

Emittance Theory for Cylindrical Fiber Selective Emitter

NASA Technical Reports Server (NTRS)

Chubb, Donald L.

1998-01-01

A fibrous rare earth selective emitter is approximated as an infinitely long cylinder. The spectral emittance, epsilon(lambda), is obtained by solving the radiative transfer equations with appropriate boundary conditions and uniform temperature. For optical depths, Kappa(R) = alpha(lambda)R, where alpha(lambda) is the extinction coefficient and R is the cylinder radius, greater than 1 the spectral emittance is nearly at its maximum value. There is an optimum cylinder radius, R(opt), for maximum emitter efficiency, eta(E). Values for R(opt) are strongly dependent on the number of emission bands of the material. The optimum radius decreases slowly with increasing emitter temperature, while the maximum efficiency and useful radiated power increase rapidly with increasing temperature.

Metal Photocathodes for Free Electron Laser Applications

NASA Astrophysics Data System (ADS)

Greaves, Corin Michael Ricardo

Synchrotron x-ray radiation sources have revolutionized many areas of science from elucidating the atomic structure of proteins to understanding the electronic structure of complex materials such as the cuprate superconductors. In a Free Electron Laser (FEL), the main difference to the synchrotron radiation mechanism is that the light field acts on the electron beam, over a long distance in an undulator, and causes electron bunching at the optical wavelength. Electrons in different parts of the electron bunch are therefore correlated, and so emit coherently, with a brightness that scales as the square of the number of electrons. In order to lase, the electron beam in a FEL must have a transverse geometric emittance less than the wavelength of the light to be produced. For the generation of x-ray wavelengths, this is one of the most difficult challenges in the design and construction of a FEL. The geometric emittance can be "compressed" by acceleration to very high energy, but with the penalty of very large physical size and very large cost. The motivation for this work was provided by the desire to investigate the fundamental origin of the emittance of an electron beam as it is born at a photocathode. If this initial, or "thermal" emittance can be reduced, the energy, scale and cost of accelerators potentially would be reduced. As the LCLS used copper as its photocathode, this material was the one studied in this work. Copper was used in the LCLS as it represented a "robust" material that could stand the very high accelerating gradients used in the photoinjector of the FEL. Metals are also prompt photoemitters, and so can be used to produce very short electron bunches. This can be a useful property for creation of extremely short FEL pulses, and also for creation of beams that are allowed to expand under space charge forces, but in a way that results in linear fields, allowing subsequent recompression. An ideal photocathode for FEL photoinjector should have high quantum efficiency (QE), small emittance, fast temporal response, long lifetime, and minimal complexity. High QE of cathodes require less power for driving laser and also reduce the risk of damaging the cathode materials. Small emittance reduce the scale of the accelerator, therefore, the cost. Metal photocathodes such as copper exhibit long lifetime and fast response, but have quite low quantum efficiency ( < 10-4). The aim in this work was to understand the quantum yield of the metal, and the transverse momentum spectrum, as the product of the latter and the cathode beam spot size gives the transverse emittance. Initial x-ray diffraction work provided evidence that the LCLS photocathode consisted of large low index single crystal grains, and so work focused on the study of single crystals that could be produced with atomically ordered surfaces, rather than a polycrystalline material. Present theories of quantum yield and transverse emittance assume the basic premise that the metal is entirely disordered, and work here shows that this is fundamentally incorrect, and that the order of the surface plays a critical role in determining the characteristics of emission. In order to investigate these surfaces, I constructed a laser-based ultra-low energy angle resolved photoemission system, capable of measuring the momentum spectrum of the emission and wavelength and angle dependent electron yield. This system has been commissioned, and data taken on low index surfaces of copper. Results from this work on single crystal copper demonstrates that emitted electrons from the band structure of a material can exhibit small emittance and high quantum efficiency. We show that the emission from the Cu(111) surface state is highly correlated between angle of incidence and excitation energy. This manifests itself in the form of a truncated emission cone, rather than the isotropic emission predicted from the normal model. This clearly then reduces the emittance from the normal values. It also results in extremely strong polarization dependence, with p-s asymmetry of up to 16 at low photon energy. It also directly suggests ways through changing materials, or by material design to significantly reduce emittance, at the same time increasing electron yield. These results show the benefits that could be gained from electronic engineering of cathodes and should have direct impact in the design of future FEL photoinjectors. (Abstract shortened by UMI.)

Field emission electron source

DOEpatents

Zettl, Alexander Karlwalter; Cohen, Marvin Lou

2000-01-01

A novel field emitter material, field emission electron source, and commercially feasible fabrication method is described. The inventive field emission electron source produces reliable electron currents of up to 400 mA/cm.sup.2 at 200 volts. The emitter is robust and the current it produces is not sensitive to variability of vacuum or the distance between the emitter tip and the cathode. The novel emitter has a sharp turn-on near 100 volts.

Method and apparatus of spectro-acoustically enhanced ultrasonic detection for diagnostics

DOEpatents

Vo-Dinh, Tuan; Norton, Stephen J.

2001-01-01

An apparatus for detecting a discontinuity in a material includes a source of electromagnetic radiation has a wavelength and an intensity sufficient to induce an enhancement in contrast between a manifestation of an acoustic property in the material and of the acoustic property in the discontinuity, as compared to when the material is not irradiated by the electromagnetic radiation. An acoustic emitter directs acoustic waves to the discontinuity in the material. The acoustic waves have a sensitivity to the acoustic property. An acoustic receiver receives the acoustic waves generated by the acoustic emitter after the acoustic waves have interacted with the material and the discontinuity. The acoustic receiver also generates a signal representative of the acoustic waves received by the acoustic receiver. A processor, in communication with the acoustic receiver and responsive to the signal generated by the acoustic receiver, is programmed to generate informational output about the discontinuity based on the signal generated by the acoustic receiver.

Recent progress in nanostructured next-generation field emission devices

NASA Astrophysics Data System (ADS)

Mittal, Gaurav; Lahiri, Indranil

2014-08-01

Field emission has been known to mankind for more than a century, and extensive research in this field for the last 40-50 years has led to development of exciting applications such as electron sources, miniature x-ray devices, display materials, etc. In the last decade, large-area field emitters were projected as an important material to revolutionize healthcare and medical devices, and space research. With the advent of nanotechnology and advancements related to carbon nanotubes, field emitters are demonstrating highly enhanced performance and novel applications. Next-generation emitters need ultra-high emission current density, high brightness, excellent stability and reproducible performance. Novel design considerations and application of new materials can lead to achievement of these capabilities. This article presents an overview of recent developments in this field and their effects on improved performance of field emitters. These advancements are demonstrated to hold great potential for application in next-generation field emission devices.

Facility for assessing spectral normal emittance of solid materials at high temperature.

PubMed

Mercatelli, Luca; Meucci, Marco; Sani, Elisa

2015-10-10

Spectral emittance is a key topic in the study of new compositions, depositions, and mechanical machining of materials for solar absorption and for renewable energies in general. The present work reports on the realization and testing of a new experimental facility for the measurement of directional spectral emittance in the range of 2.5-20 μm. Our setup provides emittance spectral information in a completely controlled environment at medium-high temperatures up to 1200 K. We describe the layout and first tests on the device, comparing the results obtained for hafnium carbide and tantalum diboride ultrarefractory ceramic samples to previous quasi-monochromatic measurements carried out in the PROMES-CNRS (PROcedes, Materiaux et Energie Solaire- Centre National de la Recherche Scientifique, France) solar furnace, obtaining a good agreement. Finally, to assess the reliability of the widely used approach of estimating the spectral emittance from room-temperature reflectance spectrum, we compared the calculation in the 2.5-17 μm spectral range to the experimental high-temperature spectral emittance, obtaining that the spectral trend of calculated and measured curves is similar but the calculated emittance underestimates the measured value.

Optical properties of sputtered aluminum on graphite/epoxy composite material

NASA Technical Reports Server (NTRS)

Witte, William G., Jr.; Teichman, Louis A.

1989-01-01

Solar absorptance, emittance, and coating thickness were measured for a range of coating thicknesses from about 400 A to 2500 A. The coatings were sputtered from an aluminum target onto 1-inch-diameter substrates of T300/5209 graphite/epoxy composite material with two different surface textures. Solar absorptance and emittance values for the specimens with the smooth surface finish were lower than those for the specimens with the rough surface finish. The ratio of solar absorptance to emittance was higher for the smooth specimens, increasing from 2 to 4 over the coating thickness range, than for the rough ones, which had a constant ratio of about 1. The solar absorptance and emittance values were dependent on the thickness of the sputtered coating.

Solid-state single-photon emitters

NASA Astrophysics Data System (ADS)

Aharonovich, Igor; Englund, Dirk; Toth, Milos

2016-10-01

Single-photon emitters play an important role in many leading quantum technologies. There is still no 'ideal' on-demand single-photon emitter, but a plethora of promising material systems have been developed, and several have transitioned from proof-of-concept to engineering efforts with steadily improving performance. Here, we review recent progress in the race towards true single-photon emitters required for a range of quantum information processing applications. We focus on solid-state systems including quantum dots, defects in solids, two-dimensional hosts and carbon nanotubes, as these are well positioned to benefit from recent breakthroughs in nanofabrication and materials growth techniques. We consider the main challenges and key advantages of each platform, with a focus on scalable on-chip integration and fabrication of identical sources on photonic circuits.

Method to fabricate portable electron source based on nitrogen incorporated ultrananocrystalline diamond (N-UNCD)

DOEpatents

Sumant, Anirudha V.; Divan, Ralu; Posada, Chrystian M.; Castano, Carlos H.; Grant, Edwin J.; Lee, Hyoung K.

2016-03-29

A source cold cathode field emission array (FEA) source based on ultra-nanocrystalline diamond (UNCD) field emitters. This system was constructed as an alternative for detection of obscured objects and material. Depending on the geometry of the given situation a flat-panel source can be used in tomography, radiography, or tomosynthesis. Furthermore, the unit can be used as a portable electron or X-ray scanner or an integral part of an existing detection system. UNCD field emitters show great field emission output and can be deposited over large areas as the case with carbon nanotube "forest" (CNT) cathodes. Furthermore, UNCDs have better mechanical and thermal properties as compared to CNT tips which further extend the lifetime of UNCD based FEA.

Emittance Theory for Cylindrical Fiber Selective Emitter

NASA Technical Reports Server (NTRS)

Chubb, Donald L.

1998-01-01

A fibrous rare earth selective emitter is approximated as an infinitely long, cylinder. The spectral emittance, e(sub x), is obtained L- by solving the radiative transfer equations with appropriate boundary conditions and uniform temperature. For optical depth, K(sub R), where alpha(sub lambda), is the extinction coefficient and R is the cylinder radius, greater than 1 the spectral emittance depths, K(sub R) alpha(sub lambda)R, is nearly at its maximum value. There is an optimum cylinder radius, R(sub opt) for maximum emitter efficiency, n(sub E). Values for R(sub opt) are strongly dependent on the number of emission bands of the material. The optimum radius decreases slowly with increasing emitter temperature, while the maximum efficiency and useful radiated power increase rapidly with increasing, temperature.

Infrared Organic Light-Emitting Diodes with Carbon Nanotube Emitters.

PubMed

Graf, Arko; Murawski, Caroline; Zakharko, Yuriy; Zaumseil, Jana; Gather, Malte C

2018-03-01

While organic light-emitting diodes (OLEDs) covering all colors of the visible spectrum are widespread, suitable organic emitter materials in the near-infrared (nIR) beyond 800 nm are still lacking. Here, the first OLED based on single-walled carbon nanotubes (SWCNTs) as the emitter is demonstrated. By using a multilayer stacked architecture with matching charge blocking and charge-transport layers, narrow-band electroluminescence at wavelengths between 1000 and 1200 nm is achieved, with spectral features characteristic of excitonic and trionic emission of the employed (6,5) SWCNTs. Here, the OLED performance is investigated in detail and it is found that local conduction hot-spots lead to pronounced trion emission. Analysis of the emissive dipole orientation shows a strong horizontal alignment of the SWCNTs with an average inclination angle of 12.9° with respect to the plane, leading to an exceptionally high outcoupling efficiency of 49%. The SWCNT-based OLEDs represent a highly attractive platform for emission across the entire nIR. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Materials characterization of impregnated W and W-Ir cathodes after oxygen poisoning

NASA Astrophysics Data System (ADS)

Polk, James E.; Capece, Angela M.

2015-05-01

Electric thrusters use hollow cathodes as the electron source for generating the plasma discharge and for beam neutralization. These cathodes contain porous tungsten emitters impregnated with BaO material to achieve a lower surface work function and are operated with xenon propellant. Oxygen contaminants in the xenon plasma can poison the emitter surface, resulting in a higher work function and increased operating temperature. This could lead directly to cathode failure by preventing discharge ignition or could accelerate evaporation of the BaO material. Exposures over hundreds of hours to very high levels of oxygen can result in increased temperatures, oxidation of the tungsten substrate, and the formation of surface layers of barium tungstates. In this work, we present results of a cathode test in which impregnated tungsten and tungsten-iridium emitters were operated with 100 ppm of oxygen in the xenon plasma for several hundred hours. The chemical and morphological changes were studied using scanning electron microscopy, energy dispersive spectroscopy, and laser profilometry. The results provide strong evidence that high concentrations of oxygen accelerate the formation of tungstate layers in both types of emitters, a phenomenon not inherent to normal cathode operation. Deposits of pure tungsten were observed on the W-Ir emitter, indicating that tungsten is preferentially removed from the surface and transported in the insert plasma. A W-Ir cathode surface will therefore evolve to a pure W composition, eliminating the work function benefit of W-Ir. However, the W-Ir emitter exhibited less erosion and redeposition at the upstream end than the pure W emitter.

Rare Earth Garnet Selective Emitter

NASA Technical Reports Server (NTRS)

Lowe, Roland A.; Chubb, Donald L.; Farmer, Serene C.; Good, Brian S.

1994-01-01

Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approx. = 0.75, sup 4)|(sub 15/2) - (sup 4)|(sub 13/2),for Er-YAG and epsilon(sub lambda) approx. = 0.65, (sup 5)|(sub 7) - (sup 5)|(sub 8) for Ho-YAG) at 1500 K. In addition, low out-of-band spectral emittance, epsilon(sub lambda) less than 0.2, suggest these materials would be excellent candidates for high efficiency selective emitters in thermophotovoltaic (TPV) systems operating at moderate temperatures (1200-1500 K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. Selective emitters in the near IR are of special interest for thermophotovoltaic (TPV) energy conversion. The most promising solid selective emitters for use in a TPV system are rare earth oxides. Early spectral emittance work on rare earth oxides showed strong emission bands in the infrared (0.9 - 3 microns). However, the emittance outside the emission band was also significant and the efficiency of these emitters was low. Recent improvements in efficiency have been made with emitters fabricated from fine (5 - 10 microns) rare earth oxide fibers similar to the Welsbach mantle used in gas lanterns. However, the rare earth garnet emitters are more rugged than the mantle type emitters. A thin film selective emitter on a low emissivity substrate such as gold, platinum etc., is rugged and easily adapted to a wide variety of thermal sources. The garnet structure and its many subgroups have been successfully used as hosts for rare earth ions, introduced as substitutional impurities, in the development of solid state laser crystals. Doping, dependent on the particular ion and crystal structure, may be as high as 100 at. % (complete substitution of yttrium ion with the rare earth ion). These materials have high melting points, 1940 C for YAG (Yttrium Aluminum Garnet), and low emissivity in the near infrared making them excellent candidates for a thin film selective emitter. As previously stated, the spectral emittance of a rare earth emitter is characterized by one or more well defined emission bands. Outside the emission band the emittance(absorptance) is much lower. Therefore, it is expected that emission outside the band for a thin film selective emitter will be dominated by the emitter substrate. For an efficient emitter (power in the emission band/total emitted power) the substrate must have low emittance, epsilon(sub S). This paper presents normal spectral emittance, epsilon(sub lambda), measurements of holmium(Ho) and erbium (Er) doped YAG thin film selective emitters at (1500 K), and compares those results with the theoretical spectral emittance.

A transistor based on 2D material and silicon junction

NASA Astrophysics Data System (ADS)

Kim, Sanghoek; Lee, Seunghyun

2017-07-01

A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene's stability. A transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

Graphene-on-GaN Hot Electron Transistor

NASA Astrophysics Data System (ADS)

Zubair, Ahmad; Nourbakhsh, Amirhasan; Hong, Jin-Yong; Song, Yi; Qi, Meng; Jena, Debdeep; Kong, Jing; Dresselhaus, Mildred S.; Palacios, Tomas

Hot electron transistors (HETs) are promising devices for potential high-frequency operation that currently CMOS cannot provide. In an HET, carrier transport is due to the injection of hot electrons from an emitter to a collector which is modulated by a base electrode. Therefore, ultra-thin base electrodes are needed to facilitate ultra-short transit time and high performance for THz operation range. In this regard, graphene, the thinnest conductive membrane in nature, is considered the best candidate for the base material in HETs. The existing HETs with SiO2/Si as emitter stack suffer from low current gain and output current density. In this work, we use the two-dimensional electron gas (2-DEG) in a GaN-based heterostructure as emitter and monolayer graphene as the base electrode. The transport study of the proof-of-concept device shows high output current density (>50 A/cm2) , current gain (>3) and ballistic injection efficiency of 75%. These results indicate that performance parameters can be further improved by engineering the band offset of the graphene/collector stack and improved interface between graphene and GaN. Army Research Office (ARO) (Grant Nos. W911NF-14-2-0071, 6930265, and 6930861).

Spatially selective assembly of quantum dot light emitters in an LED using engineered peptides.

PubMed

Demir, Hilmi Volkan; Seker, Urartu Ozgur Safak; Zengin, Gulis; Mutlugun, Evren; Sari, Emre; Tamerler, Candan; Sarikaya, Mehmet

2011-04-26

Semiconductor nanocrystal quantum dots are utilized in numerous applications in nano- and biotechnology. In device applications, where several different material components are involved, quantum dots typically need to be assembled at explicit locations for enhanced functionality. Conventional approaches cannot meet these requirements where assembly of nanocrystals is usually material-nonspecific, thereby limiting the control of their spatial distribution. Here we demonstrate directed self-assembly of quantum dot emitters at material-specific locations in a color-conversion LED containing several material components including a metal, a dielectric, and a semiconductor. We achieve a spatially selective immobilization of quantum dot emitters by using the unique material selectivity characteristics provided by the engineered solid-binding peptides as smart linkers. Peptide-decorated quantum dots exhibited several orders of magnitude higher photoluminescence compared to the control groups, thus, potentially opening up novel ways to advance these photonic platforms in applications ranging from chemical to biodetection.

Eye safe high power laser diode in the 1410-1550nm range

NASA Astrophysics Data System (ADS)

Boucart, Julien; de Largy, Brian; Kearley, Mark; Lichtenstein, Norbert

2010-02-01

The demand for high power lasers emitting in the 14xx-15xxnm range is growing for applications in fields such as medical or homeland security. We demonstrate high power laser diodes with emission at 1430, 1470 and 1560 nm. Single multimode emitters at 1470nm emit about 3.5W in CW operation. Power conversion efficiency can reach values as high as 38.5%. With this base material, single and multi-emitter fiber coupled modules are built. Additionally, bars on passive and microchannel coolers are fabricated that deliver 25W and 38W respectively in CW mode, while obtaining more than 80 W in pulsed mode. All reliability tests show an outstanding stability of the material with no signs of wearout after 3750 hrs under strong acceleration conditions.

In situ arsenic-doped polycrystalline silicon as a low thermal budget emitter contact for Si/Si1 - xGex heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

King, C. A.; Johnson, R. W.; Pinto, M. R.; Luftman, H. S.; Munanka, J.

1996-01-01

A low thermal budget emitter contact with low specific contact resistivity (ρc) with the absence of transient enhanced diffusion (TED) effects is essential to fabricate integratable high performance Si/SiGe heterojunction bipolar transistors (HBTs). We report the use of in situ As-doped polycrystalline silicon (polysilicon) from a low base pressure rapid thermal episystem for this purpose and find that it meets all the requirements. We used secondary ion mass spectrometry to find that 18 nm, heavily B-doped layers remain intact after implantation into the surface polysilicon and annealing at 800 °C for 40 s. Similar samples without the surface polylayer displayed extreme broadening of B profile. Kelvin crossbridge resistors together with 2D device simulations revealed that ρc is an extremely low value of 1.2×10-8 Ω cm2 in as-deposited material. Fabrication of simple 30×30 μm2 mesa isolated HBT devices showed IC to be more than two decades higher in devices with only an in situ As-doped polyemitter compared with devices that incorporated a surface implant into the single crystal portion of the emitter before polysilicon deposition. These results demonstrate that this doped polycrystalline silicon material is an excellent choice for emitter contacts to HBT devices.

Feasibility study of oxygen-dispensing emitters for thermionic converters, phase 1

NASA Technical Reports Server (NTRS)

Desteese, J. G.

1972-01-01

A metal/ceramic Marchuk tube was used to measure work functions of oxygen-doped tantalum, to determine applicability of the material to plasma-mode thermionic converters. Oxygen-doped tantalum was shown to increase in work function monotonically with oxygen doping in the range 0.1 to 0.3 atomic percent. Oxygenated test emitters were run at an average temperature of 2165 K and a T/T sub Cs ratio -5.8 to observe the influence of oxygen depletion. Bare work function decreased with outgassing of oxygen. Projections were made based on outgassing kinetics and area/volume ratios to calculate the longevity of oxygen doping in a practical converter. Calculations indicated that the program goal of 10,000 hr could be achieved at 1800 K with an initial oxygen doping of 1 atomic percent and a practical emitter area/volume ratio.

Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grosso, Gabriele; Moon, Hyowon; Lienhard, Benjamin

Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 10 6 counts per second at saturation, after correcting for uncorrelated photonmore » background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.« less

Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride

DOE PAGES

Grosso, Gabriele; Moon, Hyowon; Lienhard, Benjamin; ...

2017-09-26

Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 10 6 counts per second at saturation, after correcting for uncorrelated photonmore » background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.« less

Harvesting Triplet Excitons with Exciplex Thermally Activated Delayed Fluorescence Emitters toward High Performance Heterostructured Organic Light-Emitting Field Effect Transistors.

PubMed

Song, Li; Hu, Yongsheng; Liu, Zheqin; Lv, Ying; Guo, Xiaoyang; Liu, Xingyuan

2017-01-25

The utilization of triplet excitons plays a key role in obtaining high emission efficiency for organic electroluminescent devices. However, to date, only phosphorescent materials have been implemented to harvest the triplet excitons in the organic light-emitting field effect transistors (OLEFETs). In this work, we report the first incorporation of exciplex thermally activated delayed fluorescence (TADF) emitters in heterostructured OLEFETs to harvest the triplet excitons. By developing a new kind of exciplex TADF emitter constituted by m-MTDATA (4,4',4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) as the donor and OXD-7 (1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene) as the acceptor, an exciton utilization efficiency of 74.3% for the devices was achieved. It is found that the injection barrier between hole transport layer and emission layer as well as the ratio between donor and acceptor would influence the external quantum efficiency (EQE) significantly. Devices with a maximum EQE of 3.76% which is far exceeding the reported results for devices with conventional fluorescent emitters were successfully demonstrated. Moreover, the EQE at high brightness even outperformed the result for organic light-emitting diode based on the same emitter. Our results demonstrate that the exciplex TADF emitters can be promising candidates to develop OLEFETs with high performance.

All-optical control and super-resolution imaging of quantum emitters in layered materials.

PubMed

Kianinia, Mehran; Bradac, Carlo; Sontheimer, Bernd; Wang, Fan; Tran, Toan Trong; Nguyen, Minh; Kim, Sejeong; Xu, Zai-Quan; Jin, Dayong; Schell, Andreas W; Lobo, Charlene J; Aharonovich, Igor; Toth, Milos

2018-02-28

Layered van der Waals materials are emerging as compelling two-dimensional platforms for nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and quantum information processing. Among these, hexagonal boron nitride (hBN) is known to host ultra-bright, room-temperature quantum emitters, whose nature is yet to be fully understood. Here we present a set of measurements that give unique insight into the photophysical properties and level structure of hBN quantum emitters. Specifically, we report the existence of a class of hBN quantum emitters with a fast-decaying intermediate and a long-lived metastable state accessible from the first excited electronic state. Furthermore, by means of a two-laser repumping scheme, we show an enhanced photoluminescence and emission intensity, which can be utilized to realize a new modality of far-field super-resolution imaging. Our findings expand current understanding of quantum emitters in hBN and show new potential ways of harnessing their nonlinear optical properties in sub-diffraction nanoscopy.

Emittance and absorptance of the National Aeronautics and Space Administration ceramic thermal barrier coating. [for gas turbine engine components

NASA Technical Reports Server (NTRS)

Liebert, C. H.

1978-01-01

The spectral emittance of a NASA developed zirconia ceramic thermal barrier coating system, consisting of a metal substrate, a layer of Ni-Cr-Al-Y bond material and a layer of yttria-stabilized zirconia ceramic material, is analyzed. The emittance, needed for evaluation of radiant heat loads on cooled coated gas turbine components, was measured over a range of temperatures that would be typical of its use on such components. Emittance data were obtained with a spectrometer, a reflectometer and a radiation pyrometer at a single bond coating thickness of 0.010 cm and at a ceramic coating thickness of 0-0.076 cm. The data were transformed into the hemispherical total emittance and were correlated to the ceramic coating thickness and temperature using multiple-regression curve-fitting techniques. The system was found to be highly reflective, and, consequently, capable of significantly reducing radiation heat loads on cooled gas turbine engine components.

The application of high efficient yellow phosphorescent material to white OLEDs

NASA Astrophysics Data System (ADS)

Lin, Jin-Sheng; Ku, Chun-Neng; Huang, Pang-Chi; Wu, Cheng-An; Chang, Meng-Hao; Liou, Jia-Lun; Tseng, Mei-Rurng

2014-10-01

A new type of thiopyridinyl-based iridium molecule (POT) was used as the yellow phosphorescent material in our research. On fabricating a yellow PHOLED by doping POT-02 with host as the emitter, the device achieved a high power efficiency of 66.0 lm/W and an external quantum efficiency of 23.2%. On the other hand, a white organic lightemitting diode (WOLED) with a high power efficiency has been demonstrated by dispersing a host-free, yellow phosphorescent material in-between double blue phosphorescent emitters. In this study, we introduce a simple process for generating yellow emission of a WOLED by using the B/Y/B EML configuration. The B/Y/B EML configuration can achieve a higher efficiency and a smaller color shift with various operational brightness values. Based on the concept of this device, the molecular engineering of the blue phosphorescent host material as well as the light-extraction film, a WOLED with a power efficiency of 103 lm/W and an external quantum efficiency of 38.2% at a practical brightness of 1000 cd/m2 with CIE coordinates (CIEx, y) of (0.36, 0.48) can be achieved.

Photoelectron linear accelerator for producing a low emittance polarized electron beam

DOEpatents

Yu, David U.; Clendenin, James E.; Kirby, Robert E.

2004-06-01

A photoelectron linear accelerator for producing a low emittance polarized electric beam. The accelerator includes a tube having an inner wall, the inner tube wall being coated by a getter material. A portable, or demountable, cathode plug is mounted within said tube, the surface of said cathode having a semiconductor material formed thereon.

Methods and apparatus for producing and storing positrons and protons

DOEpatents

Akers, Douglas W [Idaho Falls, ID

2010-07-06

Apparatus for producing and storing positrons may include a trap that defines an interior chamber therein and that contains an electric field and a magnetic field. The trap may further include a source material that includes atoms that, when activated by photon bombardment, become positron emitters to produce positrons. The trap may also include a moderator positioned adjacent the source material. A photon source is positioned adjacent the trap so that photons produced by the photon source bombard the source material to produce the positron emitters. Positrons from the positron emitters and moderated positrons from the moderator are confined within the interior chamber of the trap by the electric and magnetic fields. Apparatus for producing and storing protons are also disclosed.

Rare-Earth Oxide (Yb2O3) Selective Emitter Fabrication and Evaluation

NASA Technical Reports Server (NTRS)

Jennette, Bryan; Gregory, Don A.; Herren, Kenneth; Tucker, Dennis; Smith, W. Scott (Technical Monitor)

2001-01-01

This investigation involved the fabrication and evaluation of rare-earth oxide selective emitters. The first goal of this study was to successfully fabricate the selective emitter samples using paper and ceramic materials processing techniques. The resulting microstructure was also analyzed using a Scanning Electron Microscope. All selective emitter samples fabricated for this study were made with ytterbium oxide (Yb2O3). The second goal of this study involved the measurement of the spectral emission and the radiated power of all the selective emitter samples. The final goal of this study involved the direct comparison of the radiated power emitted by the selective emitter samples to that of a standard blackbody at the same temperature and within the same wavelength range.

A combined emitter threat assessment method based on ICW-RCM

NASA Astrophysics Data System (ADS)

Zhang, Ying; Wang, Hongwei; Guo, Xiaotao; Wang, Yubing

2017-08-01

Considering that the tradition al emitter threat assessment methods are difficult to intuitively reflect the degree of target threaten and the deficiency of real-time and complexity, on the basis of radar chart method(RCM), an algorithm of emitter combined threat assessment based on ICW-RCM (improved combination weighting method, ICW) is proposed. The coarse sorting is integrated with fine sorting in emitter combined threat assessment, sequencing the emitter threat level roughly accordance to radar operation mode, and reducing task priority of the low-threat emitter; On the basis of ICW-RCM, sequencing the same radar operation mode emitter roughly, finally, obtain the results of emitter threat assessment through coarse and fine sorting. Simulation analyses show the correctness and effectiveness of this algorithm. Comparing with classical method of emitter threat assessment based on CW-RCM, the algorithm is visual in image and can work quickly with lower complexity.

New format presentation for infrared spectral emittance data. Infrared spectrometry studies, phase 5

NASA Technical Reports Server (NTRS)

Lyon, R. J. P.; Green, A. A.

1972-01-01

Methods for infrared radiance measurements from geological materials were studied for airborne use over terrains with minimal vegetation. The tasks of the investigation were: (1) calculation of emittance ratios, (2) comparison of IR spectral emittance data with K-band scatterometer data over Pisgah Crater, and (3) standard infrared spectral file. Published papers reporting the research are included.

A Robust High Current Density Electron Gun

NASA Astrophysics Data System (ADS)

Mako, F.; Peter, W.; Shiloh, J.; Len, L. K.

1996-11-01

Proof-of-principle experiments are proposed to validate a new concept for a robust, high-current density Pierce electron gun (RPG) for use in klystrons and high brightness electron sources for accelerators. This rugged, long-life electron gun avoids the difficulties associated with plasma cathodes, thermionic emitters, and field emission cathodes. The RPG concept employs the emission of secondary electrons in a transmission mode as opposed to the conventional mode of reflection, i.e., electrons exit from the back face of a thin negative electron affinity (NEA) material, and in the same direction as the incident beam. Current amplification through one stage of a NEA material could be over 50 times. The amplification is accomplished in one or more stages consisting of one primary emitter and one or more secondary emitters. The primary emitter is a low current density robust emitter (e.g., thoriated tungsten). The secondary emitters are thin NEA electrodes which emit secondary electrons in the same direction as the incident beam. Specific application is targeted for a klystron gun to be used by SLAC with a cold cathode at 30-40 amps/cm^2 output from the secondary emission stage, a ~2 μs pulse length, and ~200 pulses/second.

Non-Doped Sky-Blue OLEDs Based on Simple Structured AIE Emitters with High Efficiencies at Low Driven Voltages.

PubMed

Islam, Amjad; Zhang, Dongdong; Peng, Ruixiang; Yang, Rongjuan; Hong, Ling; Song, Wei; Wei, Qiang; Duan, Lian; Ge, Ziyi

2017-09-05

Blue organic light-emitting diodes (OLEDs) are necessary for flat-panel display technologies and lighting applications. To make more energy-saving, low-cost and long-lasting OLEDs, efficient materials as well as simple structured devices are in high demand. However, a very limited number of blue OLEDs achieving high stability and color purity have been reported. Herein, three new sky-blue emitters, 1,4,5-triphenyl-2-(4-(1,2,2-triphenylvinyl)phenyl)-1H-imidazole (TPEI), 1-(4-methoxyphenyl)-4,5-diphenyl-2-(4-(1,2,2-triphenylvinyl)phenyl)-1H-imidazole (TPEMeOPhI) and 1-phenyl-2,4,5-tris(4-(1,2,2-triphenylvinyl)phenyl)-1H-imidazole (3TPEI), with a combination of imidazole and tetraphenylethene groups, have been developed. High photoluminescence quantum yields are obtained for these materials. All derivatives have demonstrated aggregation-induced emission (AIE) behavior, excellent thermal stability with high decomposition and glass transition temperatures. Non-doped sky-blue OLEDs with simple structure have been fabricated employing these materials as emitters and realized high efficiencies of 2.41 % (4.92 cd A -1 , 2.70 lm W -1 ), 2.16 (4.33 cd A -1 , 2.59 lm W -1 ) and 3.13 % (6.97 cd A -1 , 4.74 lm W -1 ) for TPEI, TPEMeOPhI and 3TPEI, with small efficiency roll-off. These are among excellent results for molecules constructed from the combination of imidazole and TPE reported so far. The high performance of a 3TPEI-based device shows the promising potential of the combination of imidazole and AIEgen for synthesizing efficient electroluminescent materials for OLED devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

The effects of atomic oxygen on the thermal emittance of high temperature radiator surfaces

NASA Technical Reports Server (NTRS)

Rutledge, Sharon K.; Hotes, Deborah L.; Paulsen, Phillip E.

1989-01-01

Radiator surfaces on high temperature space power systems such as SP-100 space nuclear power system must maintain a high emittance level in order to reject waste heat effectively. One of the primary materials under consideration for the radiators is carbon-carbon composite. Since carbon is susceptible to attack by atomic oxygen in the low earth orbital environment, it is important to determine the durability of carbon composites in this environment as well as the effect atomic oxygen has on the thermal emittance of the surface if it is to be considered for use as a radiator. Results indicate that the thermal emittance of carbon-carbon composite (as low as 0.42) can be enhanced by exposure to a directed beam of atomic oxygen to levels above 0.85 at 800 K. This emittance enhancement is due to a change in the surface morphology as a result of oxidation. High aspect ratio cones are formed on the surface which allow more efficient trapping of incident radiation. Erosion of the surface due to oxidation is similar to that for carbon, so that at altitudes less than approximately 600 km, thickness loss of the radiator could be significant (as much as 0.1 cm/year). A protective coating or oxidation barrier forming additive may be needed to prevent atomic oxygen attack after the initial high emittance surface is formed. Textured surfaces can be formed in ground based facilities or possibly in space if emittance is not sensitive to the orientation of the atomic oxygen arrival that forms the texture.

Analyses of Transistor Punchthrough Failures

NASA Technical Reports Server (NTRS)

Nicolas, David P.

1999-01-01

The failure of two transistors in the Altitude Switch Assembly for the Solid Rocket Booster followed by two additional failures a year later presented a challenge to failure analysts. These devices had successfully worked for many years on numerous missions. There was no history of failures with this type of device. Extensive checks of the test procedures gave no indication for a source of the cause. The devices were manufactured more than twenty years ago and failure information on this lot date code was not readily available. External visual exam, radiography, PEID, and leak testing were performed with nominal results Electrical testing indicated nearly identical base-emitter and base-collector characteristics (both forward and reverse) with a low resistance short emitter to collector. These characteristics are indicative of a classic failure mechanism called punchthrough. In failure analysis punchthrough refers to an condition where a relatively low voltage pulse causes the device to conduct very hard producing localized areas of thermal runaway or "hot spots". At one or more of these hot spots, the excessive currents melt the silicon. Heavily doped emitter material diffuses through the base region to the collector forming a diffusion pipe shorting the emitter to base to collector. Upon cooling, an alloy junction forms between the pipe and the base region. Generally, the hot spot (punch-through site) is under the bond and no surface artifact is visible. The devices were delidded and the internal structures were examined microscopically. The gold emitter lead was melted on one device, but others had anomalies in the metallization around the in-tact emitter bonds. The SEM examination confirmed some anomalies to be cosmetic defects while other anomalies were artifacts of the punchthrough site. Subsequent to these analyses, the contractor determined that some irregular testing procedures occurred at the time of the failures heretofore unreported. These testing irregularities involved the use of a breakout box and were the likely cause of the failures. There was no evidence to suggest a generic failure mechanism was responsible for the failure of these transistors.

Robust Low-Cost Cathode for Commercial Applications

NASA Technical Reports Server (NTRS)

Patterson, Michael J.

2007-01-01

Under funding from the NASA Commercial Technology Office, a cathode assembly was designed, developed, fabricated, and tested for use in plasma sources for ground-based materials processing applications. The cathode development activity relied on the large prior NASA investment and successful development of high-current, high-efficiency, long-life hollow cathodes for use on the International Space Station Plasma Contactor System. The hollow cathode was designed and fabricated based on known engineering criteria and manufacturing processes for compatibility with the requirements of the plasma source. The transfer of NASA GRC-developed hollow cathode technology for use as an electron emitter in the commercial plasma source is anticipated to yield a significant increase in process control, while eliminating the present issues of electron emitter lifetime and contamination.

Development of techniques and associated instrumentation for high temperature emissivity measurements

NASA Technical Reports Server (NTRS)

Cunnington, G. R.; Funaa, A. I.; Cassady, P. E.

1973-01-01

Studies were made to develop a test apparatus for the measurement of total emittance of materials under repeated exposure to simulated earth entry conditions. As no existing test facility met the emittance measurement and entry simulation goals, a new apparatus was designed, fabricated and checked out. This apparatus has the capability of performing total and spectral emittance measurements during cyclic temperature and pressure exposure under sonic and supersonic flow conditions. Emittance measurements were performed on a series of oxidized superalloys, silicide coated columbium alloys and ceramic coatings.

Pulsed hybrid field emitter

DOEpatents

Sampayan, Stephen E.

1998-01-01

A hybrid emitter exploits the electric field created by a rapidly depoled ferroelectric material. Combining the emission properties of a planar thin film diamond emitter with a ferroelectric alleviates the present technological problems associated with both types of emitters and provides a robust, extremely long life, high current density cathode of the type required by emerging microwave power generation, accelerator technology and display applications. This new hybrid emitter is easy to fabricate and not susceptible to the same failures which plague microstructure field emitter technology. Local electrode geometries and electric field are determined independently from those for optimum transport and brightness preservation. Due to the large amount of surface charge created on the ferroelectric, the emitted electrons have significant energy, thus eliminating the requirement for specialized phosphors in emissive flat-panel displays.

Pulsed hybrid field emitter

DOEpatents

Sampayan, S.E.

1998-03-03

A hybrid emitter exploits the electric field created by a rapidly depoled ferroelectric material. Combining the emission properties of a planar thin film diamond emitter with a ferroelectric alleviates the present technological problems associated with both types of emitters and provides a robust, extremely long life, high current density cathode of the type required by emerging microwave power generation, accelerator technology and display applications. This new hybrid emitter is easy to fabricate and not susceptible to the same failures which plague microstructure field emitter technology. Local electrode geometries and electric field are determined independently from those for optimum transport and brightness preservation. Due to the large amount of surface charge created on the ferroelectric, the emitted electrons have significant energy, thus eliminating the requirement for specialized phosphors in emissive flat-panel displays. 11 figs.

Infrared spectrometry studies. Phase 4: Emittance spectra of selected targets from mission 108 airborne data

NASA Technical Reports Server (NTRS)

Lyon, R. J. P.

1971-01-01

Infrared radiance measurements from geological materials were studied. These involved laboratory and field spectroscopic measurements, both on the ground and airborne. A proven, feasible system is presented for airborne use over terrains with minimal vegetation. It has been shown that the spectral emittance concepts can be utilized in emittance ratio imagery which depicts the silicate composition of the terrain.

Concepts for the material development of phosphorescent organic materials processable from solution and their application in OLEDs

NASA Astrophysics Data System (ADS)

Janietz, S.; Krueger, H.; Thesen, M.; Salert, B.; Wedel, A.

2014-10-01

One example of organic electronics is the application of polymer based light emitting devices (PLEDs). PLEDs are very attractive for large area and fine-pixel displays, lighting and signage. The polymers are more amenable to solution processing by printing techniques which are favourable for low cost production in large areas. With phosphorescent emitters like Ir-complexes higher quantum efficiencies were obtained than with fluorescent systems, especially if multilayer stack systems with separated charge transport and emitting layers were applied in the case of small molecules. Polymers exhibit the ability to integrate all the active components like the hole-, electron-transport and phosphorescent molecules in only one layer. Here, the active components of a phosphorescent system - triplet emitter, hole- and electron transport molecules - can be linked as a side group to a polystyrene main chain. By varying the molecular structures of the side groups as well as the composition of the side chains with respect to the triplet emitter, hole- and electron transport structure, and by blending with suitable glass-forming, so-called small molecules, brightness, efficiency and lifetime of the produced OLEDs can be optimized. By choosing the triplet emitter, such as iridium complexes, different emission colors can be specially set. Different substituted triazine molecules were introduced as side chain into a polystyrene backbone and applied as electron transport material in PLED blend systems. The influence of alkyl chain lengths of the performance will be discussed. For an optimized blend system with a green emitting phosphorescent Ir-complex efficiencies of 60 cd/A and an lifetime improvement of 66.000 h @ 1000 cd/m2 were achieved.

Evaluation of high field and/or local heating based material degradation of nanoscale metal emitter tips: a molecular dynamics analysis

NASA Astrophysics Data System (ADS)

Zhang, Z.; Giesselmann, M.; Mankowski, J.; Dickens, J.; Neuber, A.; Joshi, R. P.

2017-05-01

A molecular dynamics (MD) model is used to study the potential for mass ejection from a metal nanoprotrusion, driven by high fields and temperature increases. Three-dimensional calculations of the electric fields surrounding the metal emitter are used to obtain the Maxwell stress on the metal. This surface loading is coupled into MD simulations. Our results show that mass ejection from the nanotip is possible and indicate that both larger aspect ratios and higher local temperatures will drive the instability. Hence it is predicted that in a nonuniform distribution of emitters, the longer and thinner sites will suffer the most damage, which is generally in keeping with the trends of a recent experimental report (Parson et al 2014 IEEE Trans. Plasma Sci. 42 3982). A possible hypothesis for mass ejection in the absence of a distinct nanoprotrusion is also discussed.

Purely Organic Thermally Activated Delayed Fluorescence Materials for Organic Light-Emitting Diodes.

PubMed

Wong, Michael Y; Zysman-Colman, Eli

2017-06-01

The design of thermally activated delayed fluorescence (TADF) materials both as emitters and as hosts is an exploding area of research. The replacement of phosphorescent metal complexes with inexpensive organic compounds in electroluminescent (EL) devices that demonstrate comparable performance metrics is paradigm shifting, as these new materials offer the possibility of developing low-cost lighting and displays. Here, a comprehensive review of TADF materials is presented, with a focus on linking their optoelectronic behavior with the performance of the organic light-emitting diode (OLED) and related EL devices. TADF emitters are cross-compared within specific color ranges, with a focus on blue, green-yellow, orange-red, and white OLEDs. Organic small-molecule, dendrimer, polymer, and exciplex emitters are all discussed within this review, as is their use as host materials. Correlations are provided between the structure of the TADF materials and their optoelectronic properties. The success of TADF materials has ushered in the next generation of OLEDs. © 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The anodic emitter effect and its inversion demonstrated by temperature measurements at doped and undoped tungsten electrodes

NASA Astrophysics Data System (ADS)

Hoebing, T.; Bergner, A.; Hermanns, P.; Mentel, J.; Awakowicz, P.

2016-04-01

The admixture of a small amount of emitter oxides, e.g. \\text{Th}{{\\text{O}}2} , \\text{L}{{\\text{a}}2}{{\\text{O}}3} or \\text{C}{{\\text{e}}2}{{\\text{O}}3} to tungsten generates the so-called emitter effect. It reduces the work function of tungsten cathodes, that are applied in high intensity discharge (HID) lamps. After leaving the electrode bulk and moving to the surface, a monolayer of Th, La, or Ce atoms is formed on the surface, which reduces the effective work function ϕ. Depending on the coverage of the electrode, the effective reduction in ϕ is subjected to the thermal desorption of the monolayer from the hot electrode surface. The thermal desorption of emitter atoms from the cathode is compensated not only by the supply from the interior of the electrode and by surface diffusion of the emitter material to its tip, but also to a large extent by a repatriation of the emitter ions from the plasma by the strong electric field in front of the cathode. Yet, an emitter ion current from the arc discharge to the anode may only be present, if the anode is cold enough to refrain from thermionic emission. Therefore, the ability of emitter oxides to reduce the temperature of tungsten anodes is only given for a moderate temperature so that the thermal desorption is low and an additional ion current is present in front of the anode. A higher electrode temperature leads to their evaporation and to an inversion of the emitter effect, which increases the temperature of the respective anodes in comparison with pure tungsten anodes. Within this article, the emitter effect of doped tungsten anodes and the transition to its inversion is investigated for thoriated, lanthanated, and ceriated tungsten electrodes by measurements of the electrode temperature in dependence on the discharge current. It is shown for a lanthanated and a ceriated anode that the emitter effect is sustained by an ion current at anode temperatures at which the thermal evaporation of emitter material is completed.

Accelerator-based neutron source for boron neutron capture therapy (BNCT) and method

DOEpatents

Yoon, W.Y.; Jones, J.L.; Nigg, D.W.; Harker, Y.D.

1999-05-11

A source for boron neutron capture therapy (BNCT) comprises a body of photoneutron emitter that includes heavy water and is closely surrounded in heat-imparting relationship by target material; one or more electron linear accelerators for supplying electron radiation having energy of substantially 2 to 10 MeV and for impinging such radiation on the target material, whereby photoneutrons are produced and heat is absorbed from the target material by the body of photoneutron emitter. The heavy water is circulated through a cooling arrangement to remove heat. A tank, desirably cylindrical or spherical, contains the heavy water, and a desired number of the electron accelerators circumferentially surround the tank and the target material as preferably made up of thin plates of metallic tungsten. Neutrons generated within the tank are passed through a surrounding region containing neutron filtering and moderating materials and through neutron delimiting structure to produce a beam or beams of epithermal neutrons normally having a minimum flux intensity level of 1.0{times}10{sup 9} neutrons per square centimeter per second. Such beam or beams of epithermal neutrons are passed through gamma ray attenuating material to provide the required epithermal neutrons for BNCT use. 3 figs.

Accelerator-based neutron source for boron neutron capture therapy (BNCT) and method

DOEpatents

Yoon, Woo Y.; Jones, James L.; Nigg, David W.; Harker, Yale D.

1999-01-01

A source for boron neutron capture therapy (BNCT) comprises a body of photoneutron emitter that includes heavy water and is closely surrounded in heat-imparting relationship by target material; one or more electron linear accelerators for supplying electron radiation having energy of substantially 2 to 10 MeV and for impinging such radiation on the target material, whereby photoneutrons are produced and heat is absorbed from the target material by the body of photoneutron emitter. The heavy water is circulated through a cooling arrangement to remove heat. A tank, desirably cylindrical or spherical, contains the heavy water, and a desired number of the electron accelerators circumferentially surround the tank and the target material as preferably made up of thin plates of metallic tungsten. Neutrons generated within the tank are passed through a surrounding region containing neutron filtering and moderating materials and through neutron delimiting structure to produce a beam or beams of epithermal neutrons normally having a minimum flux intensity level of 1.0.times.10.sup.9 neutrons per square centimeter per second. Such beam or beams of epithermal neutrons are passed through gamma ray attenuating material to provide the required epithermal neutrons for BNCT use.

Measurement and evaluation of the radiative properties of a thin solid fuel

NASA Technical Reports Server (NTRS)

Pettegrew, Richard; Street, Kenneth; Pitch, Nancy; Tien, James; Morrison, Phillip

2003-01-01

Accurate modeling of combustion systems requires knowledge of the radiative properties of the system. Gas phase properties are well known, but detailed knowledge of surface properties is limited. Recent work has provided spectrally resolved data for some solid fuels, but only for the unburned material at room temperature, and for limited sets of previously burned and quenched samples. Due to lack of knowledge of the spectrally resolved properties at elevated temperatures, as well as processing limitations in the modeling effort, graybody values are typically used for the fuels surface radiative properties. However, the spectrally resolved properties for the fuels at room temperature can be used to give a first-order correction for temperature effects on the graybody values. Figure 1 shows a sample of the spectrally resolved emittance/absorptance for a thin solid fuel of the type commonly used in combustion studies, from approximately 2 to 20 microns. This plot clearly shows a strong spectral dependence across the entire range. By definition, the emittance is the ratio of the emitted energy to that of a blackbody at the same temperature. Therefore, to determine a graybody emittance for this material, the spectrally resolved data must be applied to a blackbody curve. The total area under the resulting curve is ratioed to the total area under the blackbody curve to yield the answer. Due to the asymmetry of the spectrally resolved emittance and the changing shape of the blackbody curve as the temperature increases, the relative importance of the emittance value at any given wavelength will change as a function of temperature. Therefore, the graybody emittance value for a given material will change as a function of temperature even if the spectral dependence of the radiative properties remains unchanged. This is demonstrated in Figures 2 and 3, which are plots of the spectrally resolved emittance for KimWipes (shown in Figure 1) multiplied by the blackbody curves for 300 K (Figure 2) and 800 K (Figure 3). Each figure also shows the blackbody curve for that temperature. Ratioing the areas under the curve for each of these figures give a graybody emittance of 0.64 at 300 K, and 0.46 at 800 K. It is recognized that materials undergoing pyrolysis will change in composition as they heat up, and that the radiative properties of the materials may have inherent temperature dependence. Both of these effects will contribute to changes in the radiative characteristics of a given material, and are not accounted for here. However, this paper demonstrates the temperature dependence of graybody radiative properties, and provides a method for a first-order correction (for temperature) to the graybody values if the spectrally resolved properties are known.

Novel molecular host materials based on carbazole/PO hybrids with wide bandgap via unique linkages for solution-processed blue phosphorescent OLEDs

NASA Astrophysics Data System (ADS)

Ye, Hua; Zhou, Kaifeng; Wu, Hongyu; Chen, Kai; Xie, Gaozhan; Hu, Jingang; Yan, Guobing; Ma, Songhua; Su, Shi-Jian; Cao, Yong

2016-10-01

A series of novel molecules with wide bandgap based on electron-withdrawing diphenyl phosphine oxide units and electron-donating carbazolyl moieties through insulated unique linkages of flexible chains terminated by oxygen or sulfur atoms as solution-processable host materials were successfully synthesized for the first time, and their thermal, photophysical, and electrochemical properties were studied thoroughly. These materials possess high triplet energy levels (ET, 2.76-2.77 eV) due to the introduction of alkyl chain to interrupt the conjugation between electron-donor and electron-acceptor. Such high ET could effectively curb the energy from phosphorescent emitter transfer to the host molecules and thus assuring the emission of devices was all from the blue phosphorescent emitter iridium (III) bis [(4,6-difluorophenyl)-pyridinate-N,C2‧]picolinate (FIrpic). Among them, the solution-processed device based on CBCR6OPO without extra vacuum thermal-deposited hole-blocking layer and electron-transporting layer showed the highest maximum current efficiency (CEmax) of 4.16 cd/A. Moreover, the device presented small efficiency roll-off with current efficiency (CE) of 4.05 cd/A at high brightness up to 100 cd/m2. Our work suggests the potential applications of the solution-processable materials with wide bandgap in full-color flat-panel displays and organic lighting.

Efficient HOMO-LUMO separation by multiple resonance effect toward ultrapure blue thermally activated delayed fluorescence

NASA Astrophysics Data System (ADS)

Hatakeyama, Takuji; Ikuta, Toshiaki; Shiren, Kazushi; Nakajima, Kiichi; Nomura, Shintaro; Ni, Jingping

2016-09-01

Organic light-emitting diodes (OLEDs) play an important role in the new generation of flat-panel displays. Conventional OLEDs employing fluorescent materials together with triplet-triplet annihilation suffer from a relatively low internal quantum efficiency (IQE) of 62.5%. On the other hand, the IQE of OLEDs employing phosphorescent or thermally activated delayed fluorescence (TADF) materials can reach 100%. However, these materials exhibit very broad peaks with a full-width at half-maximum (FWHM) of 70-100 nm and cannot satisfy the color-purity requirements for displays. Therefore, the latest commercial OLED displays employ blue fluorescent materials with a relatively low IQE, and efficient blue emitters with a small FWHM are highly needed. In our manuscript, we present organic molecules that exhibit ultrapure blue fluorescence based on TADF. These molecules consist of three benzene rings connected by one boron and two nitrogen atoms, which establish a rigid polycyclic framework and significant localization of the highest occupied and lowest unoccupied molecular orbitals by a multiple resonance effect. An OLED device based on the new emitter exhibits ultrapure blue emission at 467 nm with an FWHM of 28 nm, Commission Internationale de l'Eclairage (CIE) coordinates of (0.12, 0.13), and an IQE of 100%, which represent record-setting performance for blue OLED devices.

High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer.

PubMed

Miyoshi, Yusuke; Fukazawa, Yusuke; Amasaka, Yuya; Reckmann, Robin; Yokoi, Tomoya; Ishida, Kazuki; Kawahara, Kenji; Ago, Hiroki; Maki, Hideyuki

2018-03-29

High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.

High-efficiency emitting materials based on phenylquinoline/carbazole-based compounds for organic light emitting diode applications

NASA Astrophysics Data System (ADS)

Jin, Sung-Ho

2009-08-01

Highly efficient light-emitting materials based on phenylquinoline-carbazole derivative has been synthesized for organic-light emitting diodes (OLEDs). The materials form high quality amorphous thin films by thermal evaporation and the energy levels can be easily adjusted by the introduction of different electron donating and electron withdrawing groups on carbazoylphenylquinoline. Non-doped deep-blue OLEDs using Et-CVz-PhQ as the emitter show bright emission (CIE coordinates, x=0.156, y=0.093) with an external quantum efficiency of 2.45 %. Furthermore, the material works as an excellent host material for BCzVBi to get high-performance OLEDs with excellent deep-blue CIE coordinates (x=0.155, y=0.157), high power efficiency (5.98 lm/W), and high external quantum efficiency (5.22 %). Cyclometalated Ir(III) μ-chloride bridged dimers were synthesized by iridium trichloride hydrate with an excess of our developed deep-blue emitter, Et-CVz-PhQ. The Ir(III) complexes were prepared by the dimers with the corresponding ancillary ligands. The chloride bridged diiridium complexes can be easily converted to mononuclear Ir(III) complexes by replacing the two bridging chlorides with bidentate monoanionic ancillary ligands. Among the various types of ancillary ligands, we firstly used picolinic acid N-oxide, including picolinic acid and acetylacetone as an ancillary ligands for Ir(III) complexes. The PhOLEDs also shows reasonably high brightness and good luminance efficiency of 20,000 cd/m2 and 12 cd/A, respectively.

Achieving ultra-high temperatures with a resistive emitter array

NASA Astrophysics Data System (ADS)

Danielson, Tom; Franks, Greg; Holmes, Nicholas; LaVeigne, Joe; Matis, Greg; McHugh, Steve; Norton, Dennis; Vengel, Tony; Lannon, John; Goodwin, Scott

2016-05-01

The rapid development of very-large format infrared detector arrays has challenged the IR scene projector community to also develop larger-format infrared emitter arrays to support the testing of systems incorporating these detectors. In addition to larger formats, many scene projector users require much higher simulated temperatures than can be generated with current technology in order to fully evaluate the performance of their systems and associated processing algorithms. Under the Ultra High Temperature (UHT) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>1024 x 1024) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During earlier phases of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1400 K. New emitter materials have subsequently been selected to produce pixels that achieve even higher apparent temperatures. Test results from pixels fabricated using the new material set will be presented and discussed. A 'scalable' Read In Integrated Circuit (RIIC) is also being developed under the same UHT program to drive the high temperature pixels. This RIIC will utilize through-silicon via (TSV) and Quilt Packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the yield limitations inherent in large-scale integrated circuits. Results of design verification testing of the completed RIIC will be presented and discussed.

Synthesis, photophysical and electrochemical properties of a blue emitter with binaphthalene and carbazole units.

PubMed

Guo, Lixia; Wang, Xiaoju; Feng, Liheng

2018-08-05

A blue emitter, 3,3'-(2,2'-dimethoxy-[1,1'-binaphthalene]-6,6'-diyl)bis(9-benzyl-9H-carbazole), was synthesized by Suzuki coupling reaction. The photophysical properties of the emitter in solution were firstly investigated by UV-Vis absorption and fluorescence emission techniques. The results indicate that the emitter has excellent optical and electron transfer properties. The maximum absorption and emission peaks of the emitter are 302 nm and 406 nm with 67.4% fluorescence quantum yield in chloroform, respectively. Thermal stability study reveals that the emitter has a good thermal stability (Td > 330 °C, Tg > 160 °C). Electrochemical Redox properties of the emitters were measured by cyclic voltammetry, and the energy gaps of highest occupied molecular orbital and the lowest unoccupied molecular orbital levels are in good agreement with the results of theoretical calculation. Furthermore, the multilayer electrochemcial device with the emitter was fabricated and its properties were explored. The wavelength of electroluminescence for the device with this emitter locates at 428 nm. These results indicate the emitter as a deep blue-emitting material has promising application in organic light-emitting diode devices. Copyright © 2018 Elsevier B.V. All rights reserved.

Fiber-optical method of pyrometric measurement of melts temperature

NASA Astrophysics Data System (ADS)

Zakharenko, V. A.; Veprikova, Ya R.

2018-01-01

There is a scientific problem of non-contact measurement of the temperature of metal melts now. The problem is related to the need to achieve the specified measurement errors in conditions of uncertainty of the blackness coefficients of the radiating surfaces. The aim of this work is to substantiate the new method of measurement in which the influence of the blackness coefficient is eliminated. The task consisted in calculating the design and material of special crucible placed in the molten metal, which is an emitter in the form of blackbody (BB). The methods are based on the classical concepts of thermal radiation and calculations based on the Planck function. To solve the problem, the geometry of the crucible was calculated on the basis of the Goofy method which forms the emitter of a blackbody at the immersed in the melt. The paper describes the pyrometric device based on fiber optic pyrometer for temperature measurement of melts, which implements the proposed method of measurement using a special crucible. The emitter is formed by the melt in this crucible, the temperature within which is measured by means of fiber optic pyrometer. Based on the results of experimental studies, the radiation coefficient ε‧ > 0.999, which confirms the theoretical and computational justification is given in the article

Information extraction from FN plots of tungsten microemitters.

PubMed

Mussa, Khalil O; Mousa, Marwan S; Fischer, Andreas

2013-09-01

Tungsten based microemitter tips have been prepared both clean and coated with dielectric materials. For clean tungsten tips, apex radii have been varied ranging from 25 to 500 nm. These tips were manufactured by electrochemical etching a 0.1 mm diameter high purity (99.95%) tungsten wire at the meniscus of two molar NaOH solution. Composite micro-emitters considered here are consisting of a tungsten core coated with different dielectric materials-such as magnesium oxide (MgO), sodium hydroxide (NaOH), tetracyanoethylene (TCNE), and zinc oxide (ZnO). It is worthwhile noting here, that the rather unconventional NaOH coating has shown several interesting properties. Various properties of these emitters were measured including current-voltage (IV) characteristics and the physical shape of the tips. A conventional field emission microscope (FEM) with a tip (cathode)-screen (anode) separation standardized at 10 mm was used to electrically characterize the electron emitters. The system was evacuated down to a base pressure of ∼10(-8) mbar when baked at up to ∼180 °C overnight. This allowed measurements of typical field electron emission (FE) characteristics, namely the IV characteristics and the emission images on a conductive phosphorus screen (the anode). Mechanical characterization has been performed through a FEI scanning electron microscope (SEM). Within this work, the mentioned experimental results are connected to the theory for analyzing Fowler-Nordheim (FN) plots. We compared and evaluated the data extracted from clean tungsten tips of different radii and determined deviations between the results of different extraction methods applied. In particular, we derived the apex radii of several clean and coated tungsten tips by both SEM imaging and analyzing FN plots. The aim of this analysis is to support the ongoing discussion on recently developed improvements of the theory for analyzing FN plots related to metal field electron emitters, which in particular introduces a new form of intercept correction factors. The results derived demonstrate the applicability of the applied method on needle shaped - i.e. non planar - emitters as well as its limits. Copyright © 2013 Elsevier B.V. All rights reserved.

Emitter/absorber interface of CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

The performance of CdTe solar cells can be very sensitive to their emitter/absorber interfaces, especially for high-efficiency cells with improved bulk properties. When interface defect states are located at efficient recombination energies, performance losses from acceptor-type interface defects can be significant. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e. defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV /= 0.4 eV), however, can impede electron transport and leadmore » to a reduction of photocurrent and fill-factor. In contrast to the spike, a 'cliff' (.delta..EC < 0 eV) is likely to allow many holes in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. In addition, a thin and highly-doped emitter can invert the absorber, form a large hole barrier, and decrease device performance losses due to high interface defect density. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. Other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ..delta..EC. These materials are predicted to yield higher voltages and would therefore be better candidates for the CdTe-cell emitter.« less

Secondary emission electron gun using external primaries

DOEpatents

Srinivasan-Rao, Triveni [Shoreham, NY; Ben-Zvi, Ilan [Setauket, NY

2009-10-13

An electron gun for generating an electron beam is provided, which includes a secondary emitter. The secondary emitter includes a non-contaminating negative-electron-affinity (NEA) material and emitting surface. The gun includes an accelerating region which accelerates the secondaries from the emitting surface. The secondaries are emitted in response to a primary beam generated external to the accelerating region. The accelerating region may include a superconducting radio frequency (RF) cavity, and the gun may be operated in a continuous wave (CW) mode. The secondary emitter includes hydrogenated diamond. A uniform electrically conductive layer is superposed on the emitter to replenish the extracted current, preventing charging of the emitter. An encapsulated secondary emission enhanced cathode device, useful in a superconducting RF cavity, includes a housing for maintaining vacuum, a cathode, e.g., a photocathode, and the non-contaminating NEA secondary emitter with the uniform electrically conductive layer superposed thereon.

Secondary emission electron gun using external primaries

DOEpatents

Srinivasan-Rao, Triveni [Shoreham, NY; Ben-Zvi, Ilan [Setauket, NY; Kewisch, Jorg [Wading River, NY; Chang, Xiangyun [Middle Island, NY

2007-06-05

An electron gun for generating an electron beam is provided, which includes a secondary emitter. The secondary emitter includes a non-contaminating negative-electron-affinity (NEA) material and emitting surface. The gun includes an accelerating region which accelerates the secondaries from the emitting surface. The secondaries are emitted in response to a primary beam generated external to the accelerating region. The accelerating region may include a superconducting radio frequency (RF) cavity, and the gun may be operated in a continuous wave (CW) mode. The secondary emitter includes hydrogenated diamond. A uniform electrically conductive layer is superposed on the emitter to replenish the extracted current, preventing charging of the emitter. An encapsulated secondary emission enhanced cathode device, useful in a superconducting RF cavity, includes a housing for maintaining vacuum, a cathode, e.g., a photocathode, and the non-contaminating NEA secondary emitter with the uniform electrically conductive layer superposed thereon.

Thermo-electronic solar power conversion with a parabolic concentrator

NASA Astrophysics Data System (ADS)

Olukunle, Olawole C.; De, Dilip K.

2016-02-01

We consider the energy dynamics of the power generation from the sun when the solar energy is concentrated on to the emitter of a thermo-electronic converter with the help of a parabolic mirror. We use the modified Richardson-Dushman equation. The emitter cross section is assumed to be exactly equal to the focused area at a height h from the base of the mirror to prevent loss of efficiency. We report the variation of output power with solar insolation, height h, reflectivity of the mirror, and anode temperature, initially assuming that there is no space charge effect. Our methodology allows us to predict the temperature at which the anode must be cooled in order to prevent loss of efficiency of power conversion. Novel ways of tackling the space charge problem have been discussed. The space charge effect is modeled through the introduction of a parameter f (0 < f < 1) in the thermos-electron emission equation. We find that the efficiency of the power conversion depends on solar insolation, height h, apart from radii R of the concentrator aperture and emitter, and the collector material properties. We have also considered solar thermos electronic power conversion by using single atom-layer graphene as an emitter.

Beta Emission and Bremsstrahlung

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karpius, Peter Joseph

2017-11-13

Bremsstrahlung is continuous radiation produced by beta particles decelerating in matter; different beta emitters have different endpoint energies; high-energy betas interacting with high-Z materials will more likely produce bremsstrahlung; depending on the data, sometimes all you can say is that a beta emitter is present.

High-temperature MIRAGE XL (LFRA) IRSP system development

NASA Astrophysics Data System (ADS)

McHugh, Steve; Franks, Greg; LaVeigne, Joe

2017-05-01

The development of very-large format infrared detector arrays has challenged the IR scene projector community to develop larger-format infrared emitter arrays. Many scene projector applications also require much higher simulated temperatures than can be generated with current technology. This paper will present an overview of resistive emitterbased (broadband) IR scene projector system development, as well as describe recent progress in emitter materials and pixel designs applicable for legacy MIRAGE XL Systems to achieve apparent temperatures >1000K in the MWIR. These new high temperature MIRAGE XL (LFRA) Digital Emitter Engines (DEE) will be "plug and play" equivalent with legacy MIRAGE XL DEEs, the rest of the system is reusable. Under the High Temperature Dynamic Resistive Array (HDRA) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>2k x 2k) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During earlier phases of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1500 K. These new emitter materials can be utilized with legacy RIICs to produce pixels that can achieve 7X the radiance of the legacy systems with low cost and low risk. A 'scalable' Read-In Integrated Circuit (RIIC) is also being developed under the same HDRA program to drive the high temperature pixels. This RIIC will utilize through-silicon via (TSV) and Quilt Packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the yield limitations inherent in large-scale integrated circuits. These quilted arrays can be fabricated in any N x M size in 512 steps.

Planar-focusing cathodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lewellen, J. W.; Noonan, J.; Accelerator Systems Division

2005-01-01

Conventional {pi}-mode rf photoinjectors typically use magnetic solenoids for emittance compensation. This provides independent focusing strength but can complicate rf power feed placement, introduce asymmetries (due to coil crossovers), and greatly increase the cost of the photoinjector. Cathode-region focusing can also provide for a form of emittance compensation. Typically this method strongly couples focusing strength to the field gradient on the cathode, however, and usually requires altering the longitudinal position of the cathode to change the focusing. We propose a new method for achieving cathode-region variable-strength focusing for emittance compensation. The new method reduces the coupling to the gradient onmore » the cathode and does not require a change in the longitudinal position of the cathode. Expected performance for an S-band system is similar to conventional solenoid-based designs. This paper presents the results of rf cavity and beam dynamics simulations of the new design. We have proposed a method for performing emittance compensation using a cathode-region focusing scheme. This technique allows the focusing strength to be adjusted somewhat independently of the on-axis field strength. Beam dynamics calculations indicate performance should be comparable to presently in-use emittance compensation schemes, with a simpler configuration and fewer possibilities for emittance degradation due to the focusing optics. There are several potential difficulties with this approach, including cathode material selection, cathode heating, and peak fields in the gun. We hope to begin experimenting with a cathode of this type in the near future, and several possibilities exist for reducing the peak gradients to more acceptable levels.« less

New-type planar field emission display with superaligned carbon nanotube yarn emitter.

PubMed

Liu, Peng; Wei, Yang; Liu, Kai; Liu, Liang; Jiang, Kaili; Fan, Shoushan

2012-05-09

With the superaligned carbon nanotube yarn as emitter, we have fabricated a 16 × 16 pixel field emission display prototype by adopting screen printing and laser cutting technologies. A planar diode field emission structure has been adopted. A very sharp carbon nanotube yarn tip emitter can be formed by laser cutting. Low voltage phosphor was coated on the anode electrodes also by screen printing. With a specially designed circuit, we have demonstrated the dynamic character display with the field emission display prototype. The emitter material and fabrication technologies in this paper are both easy to scale up to large areas.

Field Emission Cold Cathode Devices Based on Eutectic Systems

DTIC Science & Technology

1981-07-01

8217RADC-TR-811-170 ’,Final Technical Report July 1981 FIELD EMISSION COLD CATHODE DEVICES BASED ON EUTECTIC SYSTEMS Fulmer Research Institute Ltd...and identify by block numrber) Field Emission Eutectic Systems Cold Cathode Rod Eutectics Electron Emitter Array Directionally Solidified Eutectics...Identify by block number) A survey has been made of the performance as field emission cold cathodes of selected refractory materials fabricated as

New Materials and Device Designs for Organic Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

O'Brien, Barry Patrick

Research and development of organic materials and devices for electronic applications has become an increasingly active area. Display and solid-state lighting are the most mature applications and, and products have been commercially available for several years as of this writing. Significant efforts also focus on materials for organic photovoltaic applications. Some of the newest work is in devices for medical, sensor and prosthetic applications. Worldwide energy demand is increasing as the population grows and the standard of living in developing countries improves. Some studies estimate as much as 20% of annual energy usage is consumed by lighting. Improvements are being made in lightweight, flexible, rugged panels that use organic light emitting diodes (OLEDs), which are particularly useful in developing regions with limited energy availability and harsh environments. Displays also benefit from more efficient materials as well as the lighter weight and ruggedness enabled by flexible substrates. Displays may require different emission characteristics compared with solid-state lighting. Some display technologies use a white OLED (WOLED) backlight with a color filter, but these are more complex and less efficient than displays that use separate emissive materials that produce the saturated colors needed to reproduce the entire color gamut. Saturated colors require narrow-band emitters. Full-color OLED displays up to and including television size are now commercially available from several suppliers, but research continues to develop more efficient and more stable materials. This research program investigates several topics relevant to solid-state lighting and display applications. One project is development of a device structure to optimize performance of a new stable Pt-based red emitter developed in Prof Jian Li's group. Another project investigates new Pt-based red, green and blue emitters for lighting applications and compares a red/blue structure with a red/green/blue structure to produce light with high color rendering index. Another part of this work describes the fabrication of a 14.7" diagonal full color active-matrix OLED display on plastic substrate. The backplanes were designed and fabricated in the ASU Flexible Display Center and required significant engineering to develop; a discussion of that process is also included.

Up-conversion in rare-earth doped micro-particles applied to new emissive two-dimensional displays

NASA Astrophysics Data System (ADS)

Milliez, Anne Janet

Up-conversion (UC) in rare-earth co-doped fluorides to convert diode laser light in the near infrared to red, green and blue visible light is applied to make possible high performance emissive displays. The infrared-to-visible UC in the materials we study is a sequential form of non-linear two photon absorption in which a strong absorbing constituent absorbs two low energy photons and transfers this energy to another constituent which emits visible light. Some of the UC emitters' most appealing characteristics for displays are: a wide color gamut with very saturated colors, very high brightness operation without damage to the emitters, long lifetimes and efficiencies comparable to those of existing technologies. Other advantages include simplicity of fabrication, versatility of operating modes, and the potential for greatly reduced display weight and depth. Thanks to recent advances in material science and diode laser technology at the excitation wavelength, UC selected materials can be very efficient visible emitters. However, optimal UC efficiencies strongly depend on chosing proper operating conditions. In this thesis, we studied the conditions required for optimization. We demonstrated that high efficiency UC depends on high pump irradiance, low temperature and low scattering. With this understanding we can predict how to optimally use UC emitters in a wide range of applications. In particular, we showed how our very efficient UC emitters can be applied to make full color displays and very efficient white light sources.

Prediction and design of efficient exciplex emitters for high-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes.

PubMed

Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Liu, Chuan-Lin; Lee, Chun-Sing; Li, Fan; Ou, Xue-Mei; Zhang, Xiao-Hong

2015-04-08

High-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes based on exciplex emitters are demonstrated. The best device, based on a TAPC:DPTPCz emitter, shows a high external quantum efficiency of 15.4%. Strategies for predicting and designing efficient exciplex emitters are also provided. This approach allow prediction and design of efficient exciplex emitters for achieving high-efficiency organic light-emitting diodes, for future use in displays and lighting applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

THE APPLICATION OF RADIOISOTOPES IN SHIPBUILDING FOR NONDESTRUCTIVE MATERIAL TESTING

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gerlach, H.

1962-02-01

S>Safety and reliability in shipbuilding require exact testing methods for all materials, such as plates, sheets, rods, cast pieces, welded joints, etc. Non-visible defects in parts exposed to great stress may cause great damages. Since both x-ray and gamma radiography can detect these defects, a choice has to be made between these radiation sources. ln general, for very thick pieces, gamma emitters such as Co/sup 60/ or Ta/sup 182/ are used; for medium thick pieces, gamma emitters, such as Ir/sup 192/ or Cs/sup 137/ are used; for very thin pieces weak gamma emitters, such as Eu/sup 155/ or x raysmore » are used. There is no competition between x rays and gamma rays in nondestructive testing because both methods supplement each other. The tcchnical and economical advantages and disadvantages of both methods are discussed. In shipbuilding, Ir/ sup 192/ has extremely good irradiation qualities for sheets from 6 to 50 mm thick and is superior to the x-ray method for checking welds of sheets of this thickness. However, for materials thicker than 50 mm x rays are useless, and defects in this material must be located with hard gamma emitters, such as Co/ sup 60/. Recently, mobile test stations with radioisotopes were established which are of great value for checking and quality control in shipbuilding at the shipyard. (OID)« less

Modeling quantum yield, emittance, and surface roughness effects from metallic photocathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dimitrov, D. A.; Bell, G. I.; Smedley, J.

Here, detailed measurements of momentum distributions of emitted electrons have allowed the investigation of the thermal limit of the transverse emittance from metal photocathodes. Furthermore, recent developments in material design and growth have resulted in photocathodes that can deliver high quantum efficiency and are sufficiently robust to use in high electric field gradient photoinjectors and free electron lasers. The growth process usually produces photoemissive material layers with rough surface profiles that lead to transverse accelerating fields and possible work function variations, resulting in emittance growth. To better understand the effects of temperature, density of states, and surface roughness on themore » properties of emitted electrons, we have developed realistic three-dimensional models for photocathode materials with grated surface structures. They include general modeling of electron excitation due to photon absorption, charge transport, and emission from flat and rough metallic surfaces. The models also include image charge and field enhancement effects. We report results from simulations with flat and rough surfaces to investigate how electron scattering, controlled roughness, work function variation, and field enhancement affect emission properties. Comparison of simulation results with measurements of the quantum yield and transverse emittance from flat Sb emission surfaces shows the importance of including efficient modeling of photon absorption, temperature effects, and the material density of states to achieve agreement with the experimental data.« less

Modeling quantum yield, emittance, and surface roughness effects from metallic photocathodes

DOE PAGES

Dimitrov, D. A.; Bell, G. I.; Smedley, J.; ...

2017-10-26

Here, detailed measurements of momentum distributions of emitted electrons have allowed the investigation of the thermal limit of the transverse emittance from metal photocathodes. Furthermore, recent developments in material design and growth have resulted in photocathodes that can deliver high quantum efficiency and are sufficiently robust to use in high electric field gradient photoinjectors and free electron lasers. The growth process usually produces photoemissive material layers with rough surface profiles that lead to transverse accelerating fields and possible work function variations, resulting in emittance growth. To better understand the effects of temperature, density of states, and surface roughness on themore » properties of emitted electrons, we have developed realistic three-dimensional models for photocathode materials with grated surface structures. They include general modeling of electron excitation due to photon absorption, charge transport, and emission from flat and rough metallic surfaces. The models also include image charge and field enhancement effects. We report results from simulations with flat and rough surfaces to investigate how electron scattering, controlled roughness, work function variation, and field enhancement affect emission properties. Comparison of simulation results with measurements of the quantum yield and transverse emittance from flat Sb emission surfaces shows the importance of including efficient modeling of photon absorption, temperature effects, and the material density of states to achieve agreement with the experimental data.« less

Radar signal categorization using a neural network

NASA Technical Reports Server (NTRS)

Anderson, James A.; Gately, Michael T.; Penz, P. Andrew; Collins, Dean R.

1991-01-01

Neural networks were used to analyze a complex simulated radar environment which contains noisy radar pulses generated by many different emitters. The neural network used is an energy minimizing network (the BSB model) which forms energy minima - attractors in the network dynamical system - based on learned input data. The system first determines how many emitters are present (the deinterleaving problem). Pulses from individual simulated emitters give rise to separate stable attractors in the network. Once individual emitters are characterized, it is possible to make tentative identifications of them based on their observed parameters. As a test of this idea, a neural network was used to form a small data base that potentially could make emitter identifications.

STABILIZED TRANSISTOR AMPLIFIER

DOEpatents

Noe, J.B.

1963-05-01

A temperature stabilized transistor amplifier having a pair of transistors coupled in cascade relation that are capable of providing amplification through a temperature range of - 100 un. Concent 85% F to 400 un. Concent 85% F described. The stabilization of the amplifier is attained by coupling a feedback signal taken from the emitter of second transistor at a junction between two serially arranged biasing resistances in the circuit of the emitter of the second transistor to the base of the first transistor. Thus, a change in the emitter current of the second transistor is automatically corrected by the feedback adjustment of the base-emitter potential of the first transistor and by a corresponding change in the base-emitter potential of the second transistor. (AEC)

Efficient blue and green phosphorescent OLEDs with host material containing electronically isolated carbazolyl fragments

NASA Astrophysics Data System (ADS)

Grigalevicius, Saulius; Tavgeniene, Daiva; Krucaite, Gintare; Blazevicius, Dovydas; Griniene, Raimonda; Lai, Yi-Ning; Chiu, Hao-Hsuan; Chang, Chih-Hao

2018-05-01

Dry process-able host materials are well suited to realize high performance phosphorescent organic light-emitting diodes (OLED) with precise deposition of organic layers. We demonstrate in this study high efficiency green and blue phosphorescent OLED devices by employing 3-[bis(9-ethylcarbazol-3-yl)methyl]-9-hexylcarbazole based host material. By doping a typical green emitter of fac tris(2-phenylpyridine)iridium (Ir (ppy)3) in the compound the resultant dry-processed green device exhibited superior performance with low turn on voltage of 3.0 V and with peak efficiencies of 11.4%, 39.9 cd/A and 41.8 lm/W. When blue emitter of bis [2-(4,6-difluorophenyl)pyridinato-C2,N](picolinato)iridium (III) was used, the resultant blue device showed turn on voltage of 2.9 V and peak efficiencies of 9.4%, 21.4 cd/A and 21.7 lm/W. The high efficiencies may be attributed to the host possessing high triplet energy level, effective host-to-guest energy transfer and effective carrier injection balance.

Nanobubble induced formation of quantum emitters in monolayer semiconductors

NASA Astrophysics Data System (ADS)

Shepard, Gabriella D.; Ajayi, Obafunso A.; Li, Xiangzhi; Zhu, X.-Y.; Hone, James; Strauf, Stefan

2017-06-01

The recent discovery of exciton quantum emitters in transition metal dichalcogenides (TMDCs) has triggered renewed interest of localized excitons in low-dimensional systems. Open questions remain about the microscopic origin previously attributed to dopants and/or defects as well as strain potentials. Here we show that the quantum emitters can be deliberately induced by nanobubble formation in WSe2 and BN/WSe2 heterostructures. Correlations of atomic-force microscope and hyperspectral photoluminescence images reveal that the origin of quantum emitters and trion disorder is extrinsic and related to 10 nm tall nanobubbles and 70 nm tall wrinkles, respectively. We further demonstrate that ‘hot stamping’ results in the absence of 0D quantum emitters and trion disorder. The demonstrated technique is useful for advances in nanolasers and deterministic formation of cavity-QED systems in monolayer materials.

Exciplex: An Intermolecular Charge-Transfer Approach for TADF.

PubMed

Sarma, Monima; Wong, Ken-Tsung

2018-04-03

Organic materials that display thermally activated delayed fluorescence (TADF) are a striking class of functional materials that have witnessed a booming progress in recent years. In addition to pure TADF emitters achieved by the subtle manipulations of intramolecular charge transfer processes with sophisticated molecular structures, a new class of efficient TADF-based OLEDs with emitting layer formed by blending electron donor and acceptor molecules that involve intermolecular charge transfer have also been fabricated. In contrast to pure TADF materials, the exciplex-based systems can realize small ΔEST (0-0.05 eV) much more easily since the electron and hole are positioned on two different molecules, thereby giving small exchange energy. Consequently, exciplex-based OLEDs have the prospective to maximize the TADF contribution and achieve theoretical 100% internal quantum efficiency. Therefore, the challenging issue of achieving small ΔEST in organic systems could be solved. In this article, we summarize and discuss the latest and most significant developments regarding these rapidly evolving functional materials, wherein the majority of the reported exciplex forming systems are categorized into two sub-groups, viz. (a) exciplex as TADF emitters and (b) those as hosts for fluorescent, phosphorescent and TADF dopants according to their structural features and applications. The working mechanisms of the direct electroluminescence from the donor/acceptor interface and the exciplex-forming systems as co-host for the realization of high efficiency OLEDs are reviewed and discussed. This article delivers a summary of the current progresses and achievements of exciplex-based researches and points out the future challenges to trigger more research endeavors to this growing field.

Generalized superradiant assembly for nanophotonic thermal emitters

NASA Astrophysics Data System (ADS)

Mallawaarachchi, Sudaraka; Gunapala, Sarath D.; Stockman, Mark I.; Premaratne, Malin

2018-03-01

Superradiance explains the collective enhancement of emission, observed when nanophotonic emitters are arranged within subwavelength proximity and perfect symmetry. Thermal superradiant emitter assemblies with variable photon far-field coupling rates are known to be capable of outperforming their conventional, nonsuperradiant counterparts. However, due to the inability to account for assemblies comprising emitters with various materials and dimensional configurations, existing thermal superradiant models are inadequate and incongruent. In this paper, a generalized thermal superradiant assembly for nanophotonic emitters is developed from first principles. Spectral analysis shows that not only does the proposed model outperform existing models in power delivery, but also portrays unforeseen and startling characteristics during emission. These electromagnetically induced transparency like (EIT-like) and superscattering-like characteristics are reported here for a superradiant assembly, and the effects escalate as the emitters become increasingly disparate. The fact that the EIT-like characteristics are in close agreement with a recent experimental observation involving the superradiant decay of qubits strongly bolsters the validity of the proposed model.

Close proximity electrostatic effect from small clusters of emitters

NASA Astrophysics Data System (ADS)

Dall'Agnol, Fernando F.; de Assis, Thiago A.

2017-10-01

Using a numerical simulation based on the finite-element technique, this work investigates the field emission properties from clusters of a few emitters at close proximity, by analyzing the properties of the maximum local field enhancement factor (γm ) and the corresponding emission current. At short distances between the emitters, we show the existence of a nonintuitive behavior, which consists of the increasing of γm as the distance c between the emitters decreases. Here we investigate this phenomenon for clusters with 2, 3, 4 and 7 identical emitters and study the influence of the proximity effect in the emission current, considering the role of the aspect ratio of the individual emitters. Importantly, our results show that peripheral emitters with high aspect-ratios in large clusters can, in principle, significantly increase the emitted current as a consequence only of the close proximity electrostatic effect (CPEE). This phenomenon can be seen as a physical mechanism to produce self-oscillations of individual emitters. We discuss new insights for understanding the nature of self-oscillations in emitters based on the CPEE, including applications to nanometric oscillators.

Tetradentate Schiff base platinum(II) complexes as new class of phosphorescent materials for high-efficiency and white-light electroluminescent devices.

PubMed

Che, Chi-Ming; Chan, Siu-Chung; Xiang, Hai-Feng; Chan, Michael C W; Liu, Yu; Wang, Yue

2004-07-07

The capabilities of readily prepared and sublimable Pt(II) Schiff base triplet emitters as OLED dopants have been examined; maximum luminous and power efficiencies and luminance of 31 cd A(-1), 14 lm W(-1), and 23,000 cd m(-2), respectively, and white EL (CIE: 0.33, 0.35) by simultaneous host/dopant emission, have been achieved.

Membrane-Based Emitter for Coupling Microfluidics with Ultrasensitive Nanoelectrospray Ionization-Mass Spectrometry

PubMed Central

Sun, Xuefei; Kelly, Ryan T.; Tang, Keqi; Smith, Richard D.

2011-01-01

An integrated poly(dimethylsiloxane) (PDMS) membrane-based microfluidic emitter for high performance nanoelectrospray ionization-mass spectrometry (nanoESI-MS) has been fabricated and evaluated. The ~100-μm-thick emitter was created by cutting a PDMS membrane that protrudes beyond the bulk substrate. The reduced surface area at the emitter enhances the electric field and reduces wetting of the surface by the electrospray solvent. As such, the emitter enables highly stable electrosprays at flow rates as low as 10 nL/min, and is compatible with electrospray solvents containing a large organic component (e.g., 90% methanol). This approach enables facile emitter construction, and provides excellent stability, reproducibility and sensitivity, as well as compatibility with multilayer soft lithography. PMID:21657269

Solid-state current transformer

NASA Technical Reports Server (NTRS)

Farnsworth, D. L. (Inventor)

1976-01-01

A signal transformation network which is uniquely characterized to exhibit a very low input impedance while maintaining a linear transfer characteristic when driven from a voltage source and when quiescently biased in the low microampere current range is described. In its simplest form, it consists of a tightly coupled two transistor network in which a common emitter input stage is interconnected directly with an emitter follower stage to provide virtually 100 percent negative feedback to the base input of the common emitter stage. Bias to the network is supplied via the common tie point of the common emitter stage collector terminal and the emitter follower base stage terminal by a regulated constant current source, and the output of the circuit is taken from the collector of the emitter follower stage.

Plasma treatment for producing electron emitters

DOEpatents

Coates, Don Mayo; Walter, Kevin Carl

2001-01-01

Plasma treatment for producing carbonaceous field emission electron emitters is disclosed. A plasma of ions is generated in a closed chamber and used to surround the exposed surface of a carbonaceous material. A voltage is applied to an electrode that is in contact with the carbonaceous material. This voltage has a negative potential relative to a second electrode in the chamber and serves to accelerate the ions toward the carbonaceous material and provide an ion energy sufficient to etch the exposed surface of the carbonaceous material but not sufficient to result in the implantation of the ions within the carbonaceous material. Preferably, the ions used are those of an inert gas or an inert gas with a small amount of added nitrogen.

Use of probabilistic neural networks for emitter correlation

NASA Astrophysics Data System (ADS)

Maloney, P. S.

1990-08-01

The Probabilistic Neural Network (PNN) as described by Specht''3 has been successfully applied to a number of emitter correlation problems involving operational data for training and testing of the neural net work. The PNN has been found to be a reliable classification tool for determining emitter type or even identifying specific emitter platforms given appropriate representative data sets for training con sisting only of parametric data from electronic intelligence (ELINT) reports. Four separate feasibility studies have been conducted to prove the usefulness of PNN in this application area: . Hull-to-emitter correlation (HULTEC) for identification of seagoing emitter platforms . Identification of landbased emitters from airborne sensors . Pulse sorting according to emitter of origin . Emitter typing based on a dynamically learning neural network. 1 .

Materials property definition and generation for carbon-carbon and carbon phenolic materials

NASA Technical Reports Server (NTRS)

Canfield, A. R.; Mathis, J. R.; Starrett, H. S.; Koenig, J. R.

1987-01-01

A data base program to generate statistically significant material-property data for carbon-carbon and carbon phenolic materials to be used in designs of Space Shuttle is described. The program, which will provide data necessary for thermal and stress modeling of Shuttle nozzle and exit cone structures, includes evaluation of tension, compression, shear strength, shear modulus, thermal expansion, thermal conductivity, permeability, and emittance for both materials; the testing of carbon phenolic materials also includes CTE, off-gassing, pyrolysis, and RTG. Materials to be tested will be excised from Space Shuttle inlet, throat, and exit cone billets and modified involute carbon-carbon exit cones; coprocessed blocks, panels, and cylinders will also be tested.

Radiation effects on p+n InP junctions grown by MOCVD

NASA Technical Reports Server (NTRS)

Messenger, Scott R.; Walters, Robert J.; Panunto, M. J.; Summers, Geoffrey P.

1994-01-01

The superior radiation resistance of InP over other solar cell materials such as Si or GaAs has prompted the development of InP cells for space applications. The early research on radiation effects in InP was performed by Yamaguchi and co-workers who showed that, in diffused p-InP junctions, radiation-induced defects were readily annealed both thermally and by injection, which was accompanied by significant cell recovery. More recent research efforts have been made using p-InP grown by metalorganic chemical vapor deposition (MOCVD). While similar deep level transient spectroscopy (DLTS) results were found for radiation induced defects in these cells and in diffused junctions, significant differences existed in the annealing characteristics. After injection annealing at room temperature, Yamaguchi noticed an almost complete recovery of the photovoltaic parameters, while the MOCVD samples showed only minimal annealing. In searching for an explanation of the different annealing behavior of diffused junctions and those grown by MOCVD, several possibilities have been considered. One possibility is the difference in the emitter structure. The diffused junctions have S-doped graded emitters with widths of approximately 0.3 micrometers, while the MOCVD emitters are often doped with Si and have widths of approximately 300A (0.03 micrometers). The difference in the emitter thickness can have important effects, e.g. a larger fraction of the total photocurrent is generated in the n-type material for thicker emitters. Therefore the properties of the n-InP material may explain the difference in the observed overall annealing behavior of the cells.

Amber light-emitting diode comprising a group III-nitride nanowire active region

DOEpatents

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Single-Photon Emitters in Boron Nitride Nanococoons.

PubMed

Ziegler, Joshua; Blaikie, Andrew; Fathalizadeh, Aidin; Miller, David; Yasin, Fehmi S; Williams, Kerisha; Mohrhardt, Jordan; McMorran, Benjamin J; Zettl, Alex; Alemán, Benjamín

2018-04-11

Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are attractive for a variety of quantum and photonic technologies because they combine ultra-bright, room-temperature single-photon emission with an atomically thin crystal. However, the emitter's prominence is hindered by large, strain-induced wavelength shifts. We report the discovery of a visible-wavelength, single-photon emitter (SPE) in a zero-dimensional boron nitride allotrope (the boron nitride nanococoon, BNNC) that retains the excellent optical characteristics of few-layer hBN while possessing an emission line variation that is lower by a factor of 5 than the hBN emitter. We determined the emission source to be the nanometer-size BNNC through the cross-correlation of optical confocal microscopy with high-resolution scanning and transmission electron microscopy. Altogether, this discovery enlivens color centers in BN materials and, because of the BN nanococoon's size, opens new and exciting opportunities in nanophotonics, quantum information, biological imaging, and nanoscale sensing.

The First NREL Conference on thermophotovoltaic generation of electricity: Proceedings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1994-08-01

This collection of abstracts from the July 1994 meeting contains various information on thermophotovoltaic (TPV) conversion and converters. Discussed topics include: the current status of TPV conversion, TPV tutorials, heat source and emitter technologies, advanced TPV devices, selective emitter theory and practice, programmatic and systems issues, device fundamentals, and device and material characterization.

Apparatus description and data analysis of a radiometric technique for measurements of spectral and total normal emittance

NASA Technical Reports Server (NTRS)

Edwards, S. F.; Kantsios, A. G.; Voros, J. P.; Stewart, W. F.

1975-01-01

The development of a radiometric technique for determining the spectral and total normal emittance of materials heated to temperatures of 800, 1100, and 1300 K by direct comparison with National Bureau of Standards (NBS) reference specimens is discussed. Emittances are measured over the spectral range of 1 to 15 microns and are statistically compared with NBS reference specimens. Results are included for NBS reference specimens, Rene 41, alundum, zirconia, AISI type 321 stainless steel, nickel 201, and a space-shuttle reusable surface insulation.

Multispectral infrared target detection: phenomenology and modeling

NASA Astrophysics Data System (ADS)

Cederquist, Jack N.; Rogne, Timothy J.; Schwartz, Craig R.

1993-10-01

Many targets of interest provide only very small signature differences from the clutter background. The ability to detect these small difference targets should be improved by using data which is diverse in space, time, wavelength or some other observable. Target materials often differ from background materials in the variation of their reflectance or emittance with wavelength. A multispectral sensor is therefore considered as a means to improve detection of small signal targets. If this sensor operates in the thermal infrared, it will not need solar illumination and will be useful at night as well as during the day. An understanding of the phenomenology of the spectral properties of materials and an ability to model and simulate target and clutter signatures is needed to understand potential target detection performance from multispectral infrared sensor data. Spectral variations in material emittance are due to vibrational energy transitions in molecular bonds. The spectral emittances of many materials of interest have been measured. Examples are vegetation, soil, construction and road materials, and paints. A multispectral infrared signature model has been developed which includes target and background temperature and emissivity, sky, sun, cloud and background irradiance, multiple reflection effects, path radiance, and atmospheric attenuation. This model can be used to predict multispectral infrared signatures for small signal targets.

Silicon Carbide Radioisotope Batteries

NASA Technical Reports Server (NTRS)

Rybicki, George C.

2005-01-01

The substantial radiation resistance and large bandgap of SiC semiconductor materials makes them an attractive candidate for application in a high efficiency, long life radioisotope battery. To evaluate their potential in this application, simulated batteries were constructed using SiC diodes and the alpha particle emitter Americium Am-241 or the beta particle emitter Promethium Pm-147. The Am-241 based battery showed high initial power output and an initial conversion efficiency of approximately 16%, but the power output decayed 52% in 500 hours due to radiation damage. In contrast the Pm-147 based battery showed a similar power output level and an initial conversion efficiency of approximately 0.6%, but no degradation was observed in 500 hours. However, the Pm-147 battery required approximately 1000 times the particle fluence as the Am-242 battery to achieve a similar power output. The advantages and disadvantages of each type of battery and suggestions for future improvements will be discussed.

A highly efficient CMOS nanoplasmonic crystal enhanced slow-wave thermal emitter improves infrared gas-sensing devices

PubMed Central

Pusch, Andreas; De Luca, Andrea; Oh, Sang S.; Wuestner, Sebastian; Roschuk, Tyler; Chen, Yiguo; Boual, Sophie; Ali, Zeeshan; Phillips, Chris C.; Hong, Minghui; Maier, Stefan A.; Udrea, Florin; Hopper, Richard H.; Hess, Ortwin

2015-01-01

The application of plasmonics to thermal emitters is generally assisted by absorptive losses in the metal because Kirchhoff’s law prescribes that only good absorbers make good thermal emitters. Based on a designed plasmonic crystal and exploiting a slow-wave lattice resonance and spontaneous thermal plasmon emission, we engineer a tungsten-based thermal emitter, fabricated in an industrial CMOS process, and demonstrate its markedly improved practical use in a prototype non-dispersive infrared (NDIR) gas-sensing device. We show that the emission intensity of the thermal emitter at the CO2 absorption wavelength is enhanced almost 4-fold compared to a standard non-plasmonic emitter, which enables a proportionate increase in the signal-to-noise ratio of the CO2 gas sensor. PMID:26639902

High efficiency and stable white OLED using a single emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jian

2016-01-18

The ultimate objective of this project was to demonstrate an efficient and stable white OLED using a single emitter on a planar glass substrate. The focus of the project is on the development of efficient and stable square planar phosphorescent emitters and evaluation of such class of materials in the device settings. Key challenges included improving the emission efficiency of molecular dopants and excimers, controlling emission color of emitters and their excimers, and improving optical and electrical stability of emissive dopants. At the end of this research program, the PI has made enough progress to demonstrate the potential of excimer-basedmore » white OLED as a cost-effective solution for WOLED panel in the solid state lighting applications.« less

Alpha voltaic batteries and methods thereof

NASA Technical Reports Server (NTRS)

Jenkins, Phillip (Inventor); Scheiman, David (Inventor); Castro, Stephanie (Inventor); Raffaelle, Ryne P. (Inventor); Wilt, David (Inventor); Chubb, Donald (Inventor)

2011-01-01

An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Krishnamoorthy, Sriram

We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40 kA/cm{sup 2}. The use of a wide-bandgap GaN/AlN (111 nm/2.5 nm) emitter was found to greatly improve injection efficiency of the emitter and reduce cold electron leakage. With an ultra-thin (8 nm) base, 93% of the injected hot electrons were collected, enabling a common-emitter current gain up to 14.5. This work improves understanding of the quasi-ballistic hot electron transport and may impact the development of high speed devices based on unipolar hot electron transport.

Thermal emittance from ionization-induced trapping in plasma accelerators

DOE PAGES

Schroeder, C.  B.; Vay, J. -L.; Esarey, E.; ...

2014-10-03

The minimum obtainable transverse emittance (thermal emittance) of electron beams generated and trapped in plasma-based accelerators using laser ionization injection is examined. The initial transverse phase space distribution following ionization and passage through the laser is derived, and expressions for the normalized transverse beam emittance, both along and orthogonal to the laser polarization, are presented. Results are compared to particle-in-cell simulations. Ultralow emittance beams can be generated using laser ionization injection into plasma accelerators, and examples are presented showing normalized emittances on the order of tens of nm.

Long-lived and highly efficient green and blue phosphorescent emitters and device architectures for OLED displays

NASA Astrophysics Data System (ADS)

Eickhoff, Christian; Murer, Peter; Geßner, Thomas; Birnstock, Jan; Kröger, Michael; Choi, Zungsun; Watanabe, Soichi; May, Falk; Lennartz, Christian; Stengel, Ilona; Münster, Ingo; Kahle, Klaus; Wagenblast, Gerhard; Mangold, Hannah

2015-09-01

In this paper, two OLED device concepts are introduced. First, classical phosphorescent green carbene emitters with unsurpassed lifetime, combined with low voltage and high efficiency are presented and the associated optimized OLED stacks are explained. Second, a path towards highly efficient, long-lived deep blue systems is shown. The high efficiencies can be reached by having the charge-recombination on the phosphorescent carbene emitter while at the same time short emissive lifetimes are realized by fast energy transfer to the fluorescent emitter, which eventually allows for higher OLED stability in the deep blue. Device architectures, materials and performance data are presented showing that carbene type emitters have the potential to outperform established phosphorescent green emitters both in terms of lifetime and efficiency. The specific class of green emitters under investigation shows distinctly larger electron affinities (2.1 to 2.5 eV) and ionization potentials (5.6 to 5.8 eV) as compared to the "standard" emitter Ir(ppy)3 (5.0/1.6 eV). This difference in energy levels requires an adopted OLED design, in particular with respect to emitter hosts and blocking layers. Consequently, in the diode setup presented here, the emitter species is electron transporting or electron trapping. For said green carbene emitters, the typical peak wavelength is 525 nm yielding CIE color coordinates of (x = 0.33, y = 0.62). Device data of green OLEDs are shown with EQEs of 26 %. Driving voltage at 1000 cd/m2 is below 3 V. In an optimized stack, a device lifetime of LT95 > 15,000 h (1000 cd/m2) has been reached, thus fulfilling AMOLED display requirements.

An Investigation into III-V Compounds to Reach 20% Efficiency with Minimum Cell Thickness in Ultrathin-Film Solar Cells

NASA Astrophysics Data System (ADS)

Haque, K. A. S. M. Ehteshamul; Galib, Md. Mehedi Hassan

2013-10-01

III-V single-junction solar cells have already achieved very high efficiency levels. However, their use in terrestrial applications is limited by the high fabrication cost. High-efficiency, ultrathin-film solar cells can effectively solve this problem, as their material requirement is minimum. This work presents a comparison among several III-V compounds that have high optical absorption capability as well as optimum bandgap (around 1.4 eV) for use as solar cell absorbers. The aim is to observe and compare the ability of these materials to reach a target efficiency level of 20% with minimum possible cell thickness. The solar cell considered has an n-type ZnSe window layer, an n-type Al0.1Ga0.9As emitter layer, and a p-type Ga0.5In0.5P back surface field (BSF) layer. Ge is used as the substrate. In the initial design, a p-type InP base was sandwiched between the emitter and the BSF layer, and the design parameters for the device were optimized by analyzing the simulation outcomes with ADEPT/F, a one-dimensional (1D) simulation tool. Then, the minimum cell thickness that achieves 20% efficiency was determined by observing the efficiency variation with cell thickness. Afterwards, the base material was changed to a few other selected III-V compounds, and for each case, the minimum cell thickness was determined in a similar manner. Finally, these cell thickness values were compared and analyzed to identify more effective base layer materials for III-V single-junction solar cells.

A universal formula for the field enhancement factor

NASA Astrophysics Data System (ADS)

Biswas, Debabrata

2018-04-01

The field enhancement factor (FEF) is an important quantity in field emission calculations since the tunneling electron current depends very sensitively on its magnitude. The exact dependence of FEF on the emitter height h, the radius of curvature at the apex Ra, as well as the shape of the emitter base are still largely unknown. In this work, a universal formula for the field enhancement factor is derived for a single emitter. It depends on the ratio h/Ra and has the form γ a = ( 2 h / R a ) / [ α 1 ln ( 4 h / R a ) - α 2 ] , where α1 and α2 depend on the charge distribution on the emitter. Numerical results show that a simpler form γ a = ( 2 h / R a ) / [ ln ( 4 h / R a ) - α ] is equally valid with α depending on the emitter-base. Thus, for the hyperboloid, conical, and ellipsoid emitters, the value of α is 0, 0.88, and 2, while for the cylindrical base, α ≃ 2.6.

Plasmonic metamaterial based unified broadband absorber/near infrared emitter for thermophotovoltaic system based on hexagonally packed tungsten doughnuts

NASA Astrophysics Data System (ADS)

Behera, Saraswati; Joseph, Joby

2017-11-01

In this paper, we report a simple and effective design of a polarization independent and wide incident angle plasmonic metamaterial based unified broadband absorber and thermal emitter consisting of hexagonally packed tungsten doughnuts (hexa-rings) for thermophotovoltaic system. The proposed design shows more than 85% of absorption over 0.3 to 2.18 μm, that is, over the broad spectral range from the ultraviolet to the near infrared (NIR), and 100% absorption and thermal emission at 2.18 μm. Further, the NIR plasmonic absorption and thermal emission peak is tuned from the spectral range 2.18 to 3 μm for different low bandgap photovoltaic materials by varying the design parameters such as inner and outer ring radius, instead of varying any other design parameters in the proposed design. The possibility of the realization of hexa-doughnut structures through a single-step phase engineered interference lithography technique is also demonstrated through the realization of micro/nanostructure samples over large area.

Two-Dimensional Cadmium Chloride Nanosheets in Cadmium Telluride Solar Cells.

PubMed

Perkins, Craig L; Beall, Carolyn; Reese, Matthew O; Barnes, Teresa M

2017-06-21

In this study we make use of a liquid nitrogen-based thermomechanical cleavage technique and a surface analysis cluster tool to probe in detail the tin oxide/emitter interface at the front of completed CdTe solar cells. We show that this thermomechanical cleavage occurs within a few angstroms of the SnO 2 /emitter interface. An unexpectedly high concentration of chlorine at this interface, ∼20%, was determined from a calculation that assumed a uniform chlorine distribution. Angle-resolved X-ray photoelectron spectroscopy was used to further probe the structure of the chlorine-containing layer, revealing that both sides of the cleave location are covered by one-third of a unit cell of pure CdCl 2 , a thickness corresponding to about one Cl-Cd-Cl molecular layer. We interpret this result in the context of CdCl 2 being a true layered material similar to transition-metal dichalcogenides. Exposing cleaved surfaces to water shows that this Cl-Cd-Cl trilayer is soluble, raising questions pertinent to cell reliability. Our work provides new and unanticipated details about the structure and chemistry of front surface interfaces and should prove important to improving materials, processes, and reliability of next-generation CdTe-based solar cells.

Robust Radar Emitter Recognition Based on the Three-Dimensional Distribution Feature and Transfer Learning

PubMed Central

Yang, Zhutian; Qiu, Wei; Sun, Hongjian; Nallanathan, Arumugam

2016-01-01

Due to the increasing complexity of electromagnetic signals, there exists a significant challenge for radar emitter signal recognition. To address this challenge, multi-component radar emitter recognition under a complicated noise environment is studied in this paper. A novel radar emitter recognition approach based on the three-dimensional distribution feature and transfer learning is proposed. The cubic feature for the time-frequency-energy distribution is proposed to describe the intra-pulse modulation information of radar emitters. Furthermore, the feature is reconstructed by using transfer learning in order to obtain the robust feature against signal noise rate (SNR) variation. Last, but not the least, the relevance vector machine is used to classify radar emitter signals. Simulations demonstrate that the approach proposed in this paper has better performances in accuracy and robustness than existing approaches. PMID:26927111

Robust Radar Emitter Recognition Based on the Three-Dimensional Distribution Feature and Transfer Learning.

PubMed

Yang, Zhutian; Qiu, Wei; Sun, Hongjian; Nallanathan, Arumugam

2016-02-25

Due to the increasing complexity of electromagnetic signals, there exists a significant challenge for radar emitter signal recognition. To address this challenge, multi-component radar emitter recognition under a complicated noise environment is studied in this paper. A novel radar emitter recognition approach based on the three-dimensional distribution feature and transfer learning is proposed. The cubic feature for the time-frequency-energy distribution is proposed to describe the intra-pulse modulation information of radar emitters. Furthermore, the feature is reconstructed by using transfer learning in order to obtain the robust feature against signal noise rate (SNR) variation. Last, but not the least, the relevance vector machine is used to classify radar emitter signals. Simulations demonstrate that the approach proposed in this paper has better performances in accuracy and robustness than existing approaches.

Synthetic Control of Exciton Behavior in Colloidal Quantum Dots.

PubMed

Pu, Chaodan; Qin, Haiyan; Gao, Yuan; Zhou, Jianhai; Wang, Peng; Peng, Xiaogang

2017-03-08

Colloidal quantum dots are promising optical and optoelectronic materials for various applications, whose performance is dominated by their excited-state properties. This article illustrates synthetic control of their excited states. Description of the excited states of quantum-dot emitters can be centered around exciton. We shall discuss that, different from conventional molecular emitters, ground-state structures of quantum dots are not necessarily correlated with their excited states. Synthetic control of exciton behavior heavily relies on convenient and affordable monitoring tools. For synthetic development of ideal optical and optoelectronic emitters, the key process is decay of band-edge excitons, which renders transient photoluminescence as important monitoring tool. On the basis of extensive synthetic developments in the past 20-30 years, synthetic control of exciton behavior implies surface engineering of quantum dots, including surface cation/anion stoichiometry, organic ligands, inorganic epitaxial shells, etc. For phosphors based on quantum dots doped with transition metal ions, concentration and location of the dopant ions within a nanocrystal lattice are found to be as important as control of the surface states in order to obtain bright dopant emission with monoexponential yet tunable photoluminescence decay dynamics.

Light coupling for on-chip optical interconnects

NASA Astrophysics Data System (ADS)

Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Li, Yuanhang; Cai, Wei; Li, Xin; Wang, Yongjin

2017-12-01

An on-chip optical interconnect of a light emitter, waveguide and photodetector based on p-n junction InGaN/GaN multiple quantum wells (MQWs) is fabricated to investigate the light coupling efficiency of suspended waveguides connecting the light emitter and photodetector. Optical characterizations indicate that the photocurrent of the photodetector is mainly induced by the emitted light that is transmitted through the waveguides. Suspended waveguides with and without air gaps are reported in this paper. A 1 mA current injection into the light emitter induces a photocurrent of 17.3 nA and 205.5 nA for the photodetector connected to the waveguides that with 10 μm air gaps and without air gaps, respectively. Finite-difference time-domain simulations are performed to analyze the gap effect on the coupling efficiency of the light transmission. Both the gap distance and the index variation of the gap materials are analyzed to verify the potential optical sensing functions of the on-chip optical interconnect. A possible strategy for increasing the light coupling efficiency is proven by simulations.

Theoretical investigation of carrier transfer by an optical contacting scheme for optoelectronic application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jianfeng, E-mail: jianfeng.yang@student.unsw.edu.au; Zhang, Zhilong; Chen, Weijian

2016-04-21

As a promising charge carrier transfer scheme, optical coupling could potentially improve the performance of an optoelectronic device for energy harvesting based on well developed nanotechnology. By extracting carriers optically, the functional features of the nano-structured material could be better used by minimizing the concerns about its electrical properties. In this paper, we present a rigorous electromagnetic model to analyze the optical carrier transfer problem. The flow of the energy is analyzed carefully by the photon transfer spectrum, and the photon emitters (electron-hole pairs) are assumed in a thermal equilibrium described by Bose-Einstein distribution. The result shows that an energymore » selective carrier transfer can be optically achieved at the device level by integrating the emitter and receiver into a nano-optical resonator, where both the photon emission and absorption are significantly amplified by a near-field coupling around the resonant frequency. General design and optimization schemes in practice are addressed by examining the influence of the photonic design and an energy dependent emissivity of the emitter, which can be used to develop the optical contacting concept further.« less

High temperature fuel/emitter system for advanced thermionic fuel elements

NASA Astrophysics Data System (ADS)

Moeller, Helen H.; Bremser, Albert H.; Gontar, Alexander; Fiviesky, Evgeny

1997-01-01

Specialists in space applications are currently focusing on bimodal power systems designed to provide both electric power and thermal propulsion (Kennedy, 1994 and Houts, 1995). Our work showed that thermionics is a viable technology for nuclear bimodal power systems. We demonstrated that materials for a thermionic fuel-emitter combination capable of performing at operating temperatures of 2473 K are not only possible but available. The objective of this work, funded by the US Department of Energy, Office of Space and Defense Power Systems, was to evaluate the compatibility of fuel material consisting of an uranium carbide/tantalum carbide solid solution with an emitter material consisting of a monocrystalline tungsten-niobium alloy. The uranium loading of the fuel material was 70 mole% uranium carbide. The program was successfully accomplished by a B&W/SIA LUTCH team. Its workscope was integrated with tasks being performed at both Babcock & Wilcox, Lynchburg Research Center, Lynchburg, Virginia, and SIA LUTCH, Podolsk, Russia. Samples were fabricated by LUTCH and seven thermal tests were performed in a hydrogen atmosphere. The first preliminary test was performed at 2273 K by LUTCH, and the remaining six tests were performed At B&W. Three tests were performed at 2273 K, two at 2373 K, and the final test at 2473 K. The results showed that the fuel and emitter materials were compatible in the presence of hydrogen. No evidence of liquid formation, dissolution of the uranium carbide from the uranium carbide/tantalum carbide solid solution, or diffusion of the uranium into the monocrystalline tungsten alloy was observed. Among the highlights of the program was the successful export of the fuel samples from Russia and their import into the US by commercial transport. This paper will discuss the technical aspects of this work.

Selective Emitters for High Efficiency TPV Conversion: Materials Preparation and Characterisation

NASA Astrophysics Data System (ADS)

Diso, D.; Licciulli, A.; Bianco, A.; Leo, G.; Torsello, G.; Tundo, S.; De Risi, A.; Mazzer, M.

2003-01-01

Optimising the spectral emissivity of the IR radiation source in a TPV generator is one of the crucial steps towards high efficiency TPV conversion. In this paper we present different approaches to the preparation of selective emitters to be coupled to high efficiency photovoltaic cells. The emitters are designed to work at a temperature of about 1500K and they have been prepared to be used either as external coatings for the burner or as a structural material for the burner itself. Composite ceramics containing rare earth cations, prepared by slip-casting, with various concentration of rare earths were prepared by Slip Casting and Slurry Coating. Rare earth oxides have been incorporated into different oxide matrices, namely Silica, Alumina, Zirconia and their combination. The final aim was to find the material that exhibits the best performance in terms of both high selective power emission, good efficiency along with acceptable thermo-structural properties (high temperature thermal shock resistance, good strength, no creep). The power density emitted by samples as function of the temperature has been tested in the range 1000nm-5000nm. The high temperature emission measurements and the structural tests indicate that a good compromise between the functional and the thermo-structural properties may be reached. The results of the tests on the emitter coatings carried out in a TPV generator at the operating conditions are also presented in this paper.

Development of an ultra-high temperature infrared scene projector at Santa Barbara Infrared Inc.

NASA Astrophysics Data System (ADS)

Franks, Greg; Laveigne, Joe; Danielson, Tom; McHugh, Steve; Lannon, John; Goodwin, Scott

2015-05-01

The rapid development of very-large format infrared detector arrays has challenged the IR scene projector community to develop correspondingly larger-format infrared emitter arrays to support the testing needs of systems incorporating these detectors. As with most integrated circuits, fabrication yields for the read-in integrated circuit (RIIC) that drives the emitter pixel array are expected to drop dramatically with increasing size, making monolithic RIICs larger than the current 1024x1024 format impractical and unaffordable. Additionally, many scene projector users require much higher simulated temperatures than current technology can generate to fully evaluate the performance of their systems and associated processing algorithms. Under the Ultra High Temperature (UHT) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>1024x1024) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During an earlier phase of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1000K. New emitter materials have subsequently been selected to produce pixels that achieve even higher apparent temperatures. Test results from pixels fabricated using the new material set will be presented and discussed. Also in development under the same UHT program is a 'scalable' RIIC that will be used to drive the high temperature pixels. This RIIC will utilize through-silicon vias (TSVs) and quilt packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the inherent yield limitations of very-large-scale integrated circuits. Current status of the RIIC development effort will also be presented.

Online clustering algorithms for radar emitter classification.

PubMed

Liu, Jun; Lee, Jim P Y; Senior; Li, Lingjie; Luo, Zhi-Quan; Wong, K Max

2005-08-01

Radar emitter classification is a special application of data clustering for classifying unknown radar emitters from received radar pulse samples. The main challenges of this task are the high dimensionality of radar pulse samples, small sample group size, and closely located radar pulse clusters. In this paper, two new online clustering algorithms are developed for radar emitter classification: One is model-based using the Minimum Description Length (MDL) criterion and the other is based on competitive learning. Computational complexity is analyzed for each algorithm and then compared. Simulation results show the superior performance of the model-based algorithm over competitive learning in terms of better classification accuracy, flexibility, and stability.

Development of techniques and associated instrumentation for high temperature emissivity measurements

NASA Technical Reports Server (NTRS)

Cunnington, G. R.; Funai, A. I.

1972-01-01

The calibrating and testing procedures for the radiometric emittance measurement apparatus are described. Test results are given for the NBS platinum-rhodium standard (SRM No. 1409), the NBS oxidized Kanthal standard, and the oxidized Rene 41 materials. Results indicate that with the platinum-rhodium standard the measurement system compared with the NBS data to within 0.02 for both total and spectral normal emitttance. Data from the Kanthal strip was consistently higher than NBS values. For oxidized Rene 41, no significant changes in as prepared emittance was observed. The emittance was stable for temperatures up to 1150 K.

Chemically doped three-dimensional porous graphene monoliths for high-performance flexible field emitters.

PubMed

Kim, Ho Young; Jeong, Sooyeon; Jeong, Seung Yol; Baeg, Kang-Jun; Han, Joong Tark; Jeong, Mun Seok; Lee, Geon-Woong; Jeong, Hee Jin

2015-03-12

Despite the recent progress in the fabrication of field emitters based on graphene nanosheets, their morphological and electrical properties, which affect their degree of field enhancement as well as the electron tunnelling barrier height, should be controlled to allow for better field-emission properties. Here we report a method that allows the synthesis of graphene-based emitters with a high field-enhancement factor and a low work function. The method involves forming monolithic three-dimensional (3D) graphene structures by freeze-drying of a highly concentrated graphene paste and subsequent work-function engineering by chemical doping. Graphene structures with vertically aligned edges were successfully fabricated by the freeze-drying process. Furthermore, their number density could be controlled by varying the composition of the graphene paste. Al- and Au-doped 3D graphene emitters were fabricated by introducing the corresponding dopant solutions into the graphene sheets. The resulting field-emission characteristics of the resulting emitters are discussed. The synthesized 3D graphene emitters were highly flexible, maintaining their field-emission properties even when bent at large angles. This is attributed to the high crystallinity and emitter density and good chemical stability of the 3D graphene emitters, as well as to the strong interactions between the 3D graphene emitters and the substrate.

Thermophysical properties of lunar materials. I - Thermal radiation properties of lunar materials from the Apollo missions

NASA Technical Reports Server (NTRS)

Birkebak, R. C.

1974-01-01

The successful landings on the moon of the Apollo flights and the return of samples of lunar surface material has permitted the measurement of the thermophysical properties necessary for heat transfer calculations. The characteristics of the Apollo samples are discussed along with remote sensing results which made it possible to deduce many of the thermophysical properties of the lunar surface. Definitions considered in connection with thermal radiation measurements include the bond albedo, the geometric albedo, the normal albedo, the directional reflectance, the bidirectional reflectance, and the directional emittance. The measurement techniques make use of a directional reflectance apparatus, a bidirectional reflectance apparatus, and a spectral emittance apparatus.

An accurate two-dimensional LBIC solution for bipolar transistors

NASA Astrophysics Data System (ADS)

Benarab, A.; Baudrand, H.; Lescure, M.; Boucher, J.

1988-05-01

A complete solution of the diffusion problem of carriers generated by a located light beam in the emitter and base region of a bipolar structure is presented. Green's function method and moment method are used to solve the 2-D diffusion equation in these regions. From the Green's functions solution of these equations, the light beam induced currents (LBIC) in the different junctions of the structure due to an extended generation represented by a rectangular light spot; are thus decided. The equations of these currents depend both on the parameters which characterise the structure, surface states, dimensions of the emitter and the base region, and the characteristics of the light spot, that is to say, the width and the wavelength. Curves illustrating the variation of the various LBIC in the base region junctions as a function of the impact point of the light beam ( x0) for different values of these parameters are discussed. In particular, the study of the base-emitter currents when the light beam is swept right across the sample illustrates clearly a good geometrical definition of the emitter region up to base end of the emitter-base space-charge areas and a "whirl" lateral diffusion beneath this region, (i.e. the diffusion of the generated carriers near the surface towards the horizontal base-emitter junction and those created beneath this junction towards the lateral (B-E) junctions).

Report on the CCT Supplementary Comparison S1 of Infrared Spectral Normal Emittance/Emissivity

PubMed Central

Hanssen, Leonard; Wilthan, B.; Monte, Christian; Hollandt, Jörg; Hameury, Jacques; Filtz, Jean-Remy; Girard, Ferruccio; Battuello, Mauro; Ishii, Juntaro

2016-01-01

The National Measurement Institutes (NMIs) of the United States, Germany, France, Italy and Japan, have joined in an inter-laboratory comparison of their infrared spectral emittance scales. This action is part of a series of supplementary inter-laboratory comparisons (including thermal conductivity and thermal diffusivity) sponsored by the Consultative Committee on Thermometry (CCT) Task Group on Thermophysical Quantities (TG-ThQ). The objective of this collaborative work is to strengthen the major operative National Measurement Institutes’ infrared spectral emittance scales and consequently the consistency of radiative properties measurements carried out worldwide. The comparison has been performed over a spectral range of 2 μm to 14 μm, and a temperature range from 23 °C to 800 °C. Artefacts included in the comparison are potential standards: oxidized inconel, boron nitride, and silicon carbide. The measurement instrumentation and techniques used for emittance scales are unique for each NMI, including the temperature ranges covered as well as the artefact sizes required. For example, all three common types of spectral instruments are represented: dispersive grating monochromator, Fourier transform and filter-based spectrometers. More than 2000 data points (combinations of material, wavelength and temperature) were compared. Ninety-eight percent (98%) of the data points were in agreement, with differences to weighted mean values less than the expanded uncertainties calculated from the individual NMI uncertainties and uncertainties related to the comparison process. PMID:28239193

Using antennas separated in flight direction to avoid effect of emitter clock drift in geolocation

DOEpatents

Ormesher, Richard C.; Bickel, Douglas L

2012-10-23

The location of a land-based radio frequency (RF) emitter is determined from an airborne platform. RF signaling is received from the RF emitter via first and second antennas. In response to the received RF signaling, signal samples for both antennas are produced and processed to determine the location of the RF emitter.

Selective solar absorber emittance measurement at elevated temperature

NASA Astrophysics Data System (ADS)

Giraud, Philémon; Braillon, Julien; Raccurt, Olivier

2017-06-01

Durability of solar components for CSP (Concentrated Solar Power Plant) technologies is a key point to lower cost and ensure their large deployment. These technologies concentrated the solar radiation by means of mirrors on a receiver tube where it is collected as thermal energy. The absorbers are submitted to strong environmental constraints and the degradation of their optical properties (emittance and solar absorbance) have a direct impact on performance. The characterization of a material in such condition is complicated and requires advanced apparatuses, and different measurement methods exist for the determination of the two quantities of relevance regarding an absorber, which are its emittance and its solar absorbance. The objective is to develop new optical equipment for measure the emittance of this solar absorber at elevated temperature. In this paper, we present an optical bench developed for emittance measurement on absorbers is conditions of use. Results will be shown, with a discussion of some factors of influence over this measurement and how to control them.

Development of a pepper-pot emittance meter for diagnostics of low-energy multiply charged heavy ion beams extracted from an ECR ion source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagatomo, T., E-mail: nagatomo@riken.jp; Kase, M.; Kamigaito, O.

2016-02-15

Several fluorescent materials were tested for use in the imaging screen of a pepper-pot emittance meter that is suitable for investigating the beam dynamics of multiply charged heavy ions extracted from an ECR ion source. SiO{sub 2} (quartz), KBr, Eu-doped CaF{sub 2}, and Tl-doped CsI crystals were first irradiated with 6.52-keV protons to determine the effects of radiation damage on their fluorescence emission properties. For such a low-energy proton beam, only the quartz was found to be a suitable fluorescent material, since the other materials suffered a decay in fluorescence intensity with irradiation time. Subsequently, quartz was irradiated with heavymore » {sup 12}C{sup 4+}, {sup 16}O{sup 4+}, and {sup 40}Ar{sup 11+} ions, but it was found that the fluorescence intensity decreased too rapidly to measure the emittance of these heavy-ion beams. These results suggest that a different energy loss mechanism occurs for heavier ions and for protons.« less

Demonstration of cathode emittance dominated high bunch charge beams in a DC gun-based photoinjector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gulliford, Colwyn, E-mail: cg248@cornell.edu; Bartnik, Adam, E-mail: acb20@cornell.edu; Bazarov, Ivan

We present the results of transverse emittance and longitudinal current profile measurements of high bunch charge (≥100 pC) beams produced in the DC gun-based Cornell energy recovery linac photoinjector. In particular, we show that the cathode thermal and core beam emittances dominate the final 95% and core emittances measured at 9–9.5 MeV. Additionally, we demonstrate excellent agreement between optimized 3D space charge simulations and measurement, and show that the quality of the transverse laser distribution limits the optimal simulated and measured emittances. These results, previously thought achievable only with RF guns, demonstrate that DC gun based photoinjectors are capable of deliveringmore » beams with sufficient single bunch charge and beam quality suitable for many current and next generation accelerator projects such as Energy Recovery Linacs and Free Electron Lasers.« less

Diamond-based single-photon emitters

NASA Astrophysics Data System (ADS)

Aharonovich, I.; Castelletto, S.; Simpson, D. A.; Su, C.-H.; Greentree, A. D.; Prawer, S.

2011-07-01

The exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Sources of single photons are extremely important across many applications as they can serve as vectors for quantum information—thereby allowing long-range (perhaps even global-scale) quantum states to be made and manipulated for tasks such as quantum communication or distributed quantum computation. At the single-emitter level, quantum sources also afford new possibilities in terms of nanoscopy and bio-marking. Color centers in diamond are prominent candidates to generate and manipulate quantum states of light, as they are a photostable solid-state source of single photons at room temperature. In this review, we discuss the state of the art of diamond-based single-photon emitters and highlight their fabrication methodologies. We present the experimental techniques used to characterize the quantum emitters and discuss their photophysical properties. We outline a number of applications including quantum key distribution, bio-marking and sub-diffraction imaging, where diamond-based single emitters are playing a crucial role. We conclude with a discussion of the main challenges and perspectives for employing diamond emitters in quantum information processing.

Highly Efficient Solution-Processed Deep-Red Organic Light-Emitting Diodes Based on an Exciplex Host Composed of a Hole Transporter and a Bipolar Host.

PubMed

Huang, Manli; Jiang, Bei; Xie, Guohua; Yang, Chuluo

2017-10-19

With the aim to achieve highly efficient deep-red emission, we introduced an exciplex forming cohost, 4,4',4″-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA): 2,5-bis(2-(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (o-CzOXD) (1:1). Due to the efficient triplet up-conversion processes upon the exciplex forming cohost, excellent performances of the devices were achieved with deep-red emission. Using the heteroleptic iridium complexes as the guest dopants, the solution-processed deep-red phosphorescent organic light-emitting diodes (PhOLEDs) with the iridium(III) bis(6-(4-(tert-butyl)phenyl)phenanthridine)acetylacetonate [(TP-BQ) 2 Ir(acac)]-based phosphorescent emitter exhibited an electroluminescent peak at 656 nm and a maximum external quantum efficiency (EQE) of 11.9%, which is 6.6 times that of the device based on the guest emitter doped in the polymer-based cohost. The unique exciplex with a typical hole transporter and a bipolar material is ideal and universal for hosting the red PhOLEDs and tremendously improves the device performances.

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

NASA Technical Reports Server (NTRS)

Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

2000-01-01

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Base and collector resistances in heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Anholt, R.; Bozada, C.; Desalvo, G.; Dettmer, R.; Ebel, J.; Gillespie, J.; Jenkins, T.; Havasy, C.; Ito, C.; Nakano, K.; Pettiford, C.; Quach, T.; Sewell, J.; Via, D.

1997-11-01

In heterojunction bipolar transistors (HBTs), the reverse base currents flow from the outer base periphery to the collector. The reverse base and collector resistances are therefore dominated by contact resistance, which is inversely proportional to the outer base and inner collector periphery lengths which are larger than the emitter lengths when the base and collector electrodes surround the emitter element. These resistances can be extracted from reverse Gummel (current vs Vbc with Vbc = 0) and from measurements of output resistances at zero collector voltage sweeps. We compare models with measurements where the base and collector peripheries decrease with increasing emitter diameters.

Emittance formula for slits and pepper-pot measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, M.

1996-10-01

In this note, a rigid formula for slits and pepper-pot emittance measurement is derived. The derivation is based on the one- dimensional slit measurement setup. A mathematical generalization of the slit emittance formula to the pepper-pot measurement is discussed.

Highly Efficient Thermally Activated Delayed Fluorescence from an Excited-State Intramolecular Proton Transfer System

PubMed Central

2017-01-01

Thermally activated delayed fluorescence (TADF) materials have shown great potential for highly efficient organic light-emitting diodes (OLEDs). While the current molecular design of TADF materials primarily focuses on combining donor and acceptor units, we present a novel system based on the use of excited-state intramolecular proton transfer (ESIPT) to achieve efficient TADF without relying on the well-established donor–acceptor scheme. In an appropriately designed acridone-based compound with intramolecular hydrogen bonding, ESIPT leads to separation of the highest occupied and lowest unoccupied molecular orbitals, resulting in TADF emission with a photoluminescence quantum yield of nearly 60%. High external electroluminescence quantum efficiencies of up to 14% in OLEDs using this emitter prove that efficient triplet harvesting is possible with ESIPT-based TADF materials. This work will expand and accelerate the development of a wide variety of TADF materials for high performance OLEDs. PMID:28776019

Field emission characteristics of a small number of carbon fiber emitters

NASA Astrophysics Data System (ADS)

Tang, Wilkin W.; Shiffler, Donald A.; Harris, John R.; Jensen, Kevin L.; Golby, Ken; LaCour, Matthew; Knowles, Tim

2016-09-01

This paper reports an experiment that studies the emission characteristics of small number of field emitters. The experiment consists of nine carbon fibers in a square configuration. Experimental results show that the emission characteristics depend strongly on the separation between each emitter, providing evidence of the electric field screening effects. Our results indicate that as the separation between the emitters decreases, the emission current for a given voltage also decreases. The authors compare the experimental results to four carbon fiber emitters in a linear and square configurations as well as to two carbon fiber emitters in a paired array. Voltage-current traces show that the turn-on voltage is always larger for the nine carbon fiber emitters as compared to the two and four emitters in linear configurations, and approximately identical to the four emitters in a square configuration. The observations and analysis reported here, based on Fowler-Nordheim field emission theory, suggest the electric field screening effect depends critically on the number of emitters, the separation between them, and their overall geometric configuration.

Superresolution microscope image reconstruction by spatiotemporal object decomposition and association: application in resolving t-tubule structure in skeletal muscle

PubMed Central

Sun, Mingzhai; Huang, Jiaqing; Bunyak, Filiz; Gumpper, Kristyn; De, Gejing; Sermersheim, Matthew; Liu, George; Lin, Pei-Hui; Palaniappan, Kannappan; Ma, Jianjie

2014-01-01

One key factor that limits resolution of single-molecule superresolution microscopy relates to the localization accuracy of the activated emitters, which is usually deteriorated by two factors. One originates from the background noise due to out-of-focus signals, sample auto-fluorescence, and camera acquisition noise; and the other is due to the low photon count of emitters at a single frame. With fast acquisition rate, the activated emitters can last multiple frames before they transiently switch off or permanently bleach. Effectively incorporating the temporal information of these emitters is critical to improve the spatial resolution. However, majority of the existing reconstruction algorithms locate the emitters frame by frame, discarding or underusing the temporal information. Here we present a new image reconstruction algorithm based on tracklets, short trajectories of the same objects. We improve the localization accuracy by associating the same emitters from multiple frames to form tracklets and by aggregating signals to enhance the signal to noise ratio. We also introduce a weighted mean-shift algorithm (WMS) to automatically detect the number of modes (emitters) in overlapping regions of tracklets so that not only well-separated single emitters but also individual emitters within multi-emitter groups can be identified and tracked. In combination with a maximum likelihood estimator method (MLE), we are able to resolve low to medium density of overlapping emitters with improved localization accuracy. We evaluate the performance of our method with both synthetic and experimental data, and show that the tracklet-based reconstruction is superior in localization accuracy, particularly for weak signals embedded in a strong background. Using this method, for the first time, we resolve the transverse tubule structure of the mammalian skeletal muscle. PMID:24921337

Superresolution microscope image reconstruction by spatiotemporal object decomposition and association: application in resolving t-tubule structure in skeletal muscle.

PubMed

Sun, Mingzhai; Huang, Jiaqing; Bunyak, Filiz; Gumpper, Kristyn; De, Gejing; Sermersheim, Matthew; Liu, George; Lin, Pei-Hui; Palaniappan, Kannappan; Ma, Jianjie

2014-05-19

One key factor that limits resolution of single-molecule superresolution microscopy relates to the localization accuracy of the activated emitters, which is usually deteriorated by two factors. One originates from the background noise due to out-of-focus signals, sample auto-fluorescence, and camera acquisition noise; and the other is due to the low photon count of emitters at a single frame. With fast acquisition rate, the activated emitters can last multiple frames before they transiently switch off or permanently bleach. Effectively incorporating the temporal information of these emitters is critical to improve the spatial resolution. However, majority of the existing reconstruction algorithms locate the emitters frame by frame, discarding or underusing the temporal information. Here we present a new image reconstruction algorithm based on tracklets, short trajectories of the same objects. We improve the localization accuracy by associating the same emitters from multiple frames to form tracklets and by aggregating signals to enhance the signal to noise ratio. We also introduce a weighted mean-shift algorithm (WMS) to automatically detect the number of modes (emitters) in overlapping regions of tracklets so that not only well-separated single emitters but also individual emitters within multi-emitter groups can be identified and tracked. In combination with a maximum likelihood estimator method (MLE), we are able to resolve low to medium density of overlapping emitters with improved localization accuracy. We evaluate the performance of our method with both synthetic and experimental data, and show that the tracklet-based reconstruction is superior in localization accuracy, particularly for weak signals embedded in a strong background. Using this method, for the first time, we resolve the transverse tubule structure of the mammalian skeletal muscle.

Performance and durability of high emittance heat receiver surfaces for solar dynamic power systems

NASA Technical Reports Server (NTRS)

Degroh, Kim K.; Roig, David M.; Burke, Christopher A.; Shah, Dilipkumar R.

1994-01-01

Haynes 188, a cobalt-based superalloy, will be used to make thermal energy storage (TES) containment canisters for a 2 kW solar dynamic ground test demonstrator (SD GTD). Haynes 188 containment canisters with a high thermal emittance (epsilon) are desired for radiating heat away from local hot spots, improving the heating distribution, which will in turn improve canister service life. In addition to needing a high emittance, the surface needs to be durable in an elevated temperature, high vacuum environment for an extended time period. Thirty-five Haynes 188 samples were exposed to 14 different types of surface modification techniques for emittance and vacuum heat treatment (VHT) durability enhancement evaluation. Optical properties were obtained for the modified surfaces. Emittance enhanced samples were exposed to VHT for up to 2692 hours at 827 C and less than or equal to 10(exp -6) torr with integral thermal cycling. Optical properties were taken intermittently during exposure, and after final VHT exposure. The various surface modification treatments increased the emittance of pristine Haynes 188 from 0.11 up to 0.86. Seven different surface modification techniques were found to provide surfaces which met the SD GTD receiver VHT durability requirement. Of the 7 surface treatments, 2 were found to display excellent VHT durability: an alumina based (AB) coating and a zirconia based coating. The alumina based coating was chosen for the epsilon enhancement surface modification technique for the SD GTD receiver. Details of the performance and vacuum heat treatment durability of this coating and other Haynes 188 emittance surface modification techniques are discussed. Technology from this program will lead to successful demonstration of solar dynamic power for space applications, and has potential for application in other systems requiring high emittance surfaces.

Active spacecraft potential control: An ion emitter experiment. [Cluster mission

NASA Technical Reports Server (NTRS)

Riedler, W.; Goldstein, R.; Hamelin, M.; Maehlum, B. N.; Troim, J.; Olsen, R. C.; Pedersen, A.; Grard, R. J. L.; Schmidt, R.; Rudenauer, F.

1988-01-01

The cluster spacecraft are instrumented with ion emitters for charge neutralization. The emitters produce indium ions at 6 keV. The ion current is adjusted in a feedback loop with instruments measuring the spacecraft potential. The system is based on the evaporation of indium in the apex field of a needle. The design of the active spacecraft potential control instruments, and the ion emitters is presented.

Group-III Nitride Field Emitters

NASA Technical Reports Server (NTRS)

Bensaoula, Abdelhak; Berishev, Igor

2008-01-01

Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude greater than the areal density of tips in prior field-emission devices. The electric field necessary to turn on the emission current and the current per tip in this device are both lower than in prior field-emission devices, such that it becomes possible to achieve longer operational lifetime. Moreover, notwithstanding the lower current per tip, because of the greater areal density of tips, it becomes possible to achieve greater current density averaged over the cathode area. The thickness of the grown nitride film (equivalently, the length of the columns) could lie between about 0.5 microns and a few microns; in any event, a thickness of about 1 micron is sufficient and costs less than do greater thicknesses. It may be possible to grow nitride emitter columns on glass or other substrate materials that cost less than silicon does. What is important in the choice of substrate material is the difference between the substrate and nitride crystalline structures. Inasmuch as the deposition process is nondestructive, an ability to grow emitter columns on a variety of materials would be advantageous in that it would facilitate the integration of field-emitter structures onto previously processed integrated circuits.

Design and optimization of an energy degrader with a multi-wedge scheme based on Geant4

NASA Astrophysics Data System (ADS)

Liang, Zhikai; Liu, Kaifeng; Qin, Bin; Chen, Wei; Liu, Xu; Li, Dong; Xiong, Yongqian

2018-05-01

A proton therapy facility based on an isochronous superconducting cyclotron is under construction in Huazhong University of Science and Technology (HUST). To meet the clinical requirements, an energy degrader is essential in the beamline to modulate the fixed beam energy extracted from the cyclotron. Because of the multiple Coulomb scattering in the degrader, the beam emittance and the energy spread will be considerably increased during the energy degradation process. Therefore, a set of collimators is designed to restrict the increase in beam emittance after the energy degradation. The energy spread will be reduced in the following beam line which is not discussed in this paper. In this paper, the design considerations of an energy degrader and collimators are introduced, and the properties of the degrader material, degrader structure and the initial beam parameters are discussed using the Geant4 Monte-Carlo toolkit, with the main purpose of improving the overall performance of the degrader by multiple parameter optimization.

Theory of Magnetic Bipolar Transistors

NASA Astrophysics Data System (ADS)

Zutic, Igor; Fabian, Jaroslav; Das Sarma, S.

2003-03-01

We introduce the concept of a magnetic bipolar transistor (MBT) (J. Fabian, I. Zutic, S. Das Sarma, cond-mat/0211639.), which can be realized using already available materials. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin in MBTs can be induced by external means (electrically or optically). The theory of ideal MBTs is developed and discussed in the forward active regime where the transistors can amplify signals. It is shown that source spin can be injected from the emitter to the collector. It is predicted that electrical current gain (amplification) can be controlled effectively by magnetic field and source spin. If a base is a ferromagnetic semiconductor we suggest several methods for using spin-polarized bipolar transport (I. Zutic, J. Fabian, S. Das Sarma, Phys. Rev. Lett. f 88, 066603 (2002); J. Fabian, I. Zutic, S. Das Sarma, Phys. Rev. B f 66, 165301 (2002).) to manipulate semiconductor ferromagnetism.

On the wide-range bias dependence of transistor d.c. and small-signal current gain factors.

NASA Technical Reports Server (NTRS)

Schmidt, P.; Das, M. B.

1972-01-01

Critical reappraisal of the bias dependence of the dc and small-signal ac current gain factors of planar bipolar transistors over a wide range of currents. This is based on a straightforward consideration of the three basic components of the dc base current arising due to emitter-to-base injected minority carrier transport, base-to-emitter carrier injection, and emitter-base surface depletion layer recombination effects. Experimental results on representative n-p-n and p-n-p silicon devices are given which support most of the analytical findings.

Emitter location errors in electronic recognition system

NASA Astrophysics Data System (ADS)

Matuszewski, Jan; Dikta, Anna

2017-04-01

The paper describes some of the problems associated with emitter location calculations. This aspect is the most important part of the series of tasks in the electronic recognition systems. The basic tasks include: detection of emission of electromagnetic signals, tracking (determining the direction of emitter sources), signal analysis in order to classify different emitter types and the identification of the sources of emission of the same type. The paper presents a brief description of the main methods of emitter localization and the basic mathematical formulae for calculating their location. The errors' estimation has been made to determine the emitter location for three different methods and different scenarios of emitters and direction finding (DF) sensors deployment in the electromagnetic environment. The emitter has been established using a special computer program. On the basis of extensive numerical calculations, the evaluation of precise emitter location in the recognition systems for different configuration alignment of bearing devices and emitter was conducted. The calculations which have been made based on the simulated data for different methods of location are presented in the figures and respective tables. The obtained results demonstrate that calculation of the precise emitter location depends on: the number of DF sensors, the distances between emitter and DF sensors, their mutual location in the reconnaissance area and bearing errors. The precise emitter location varies depending on the number of obtained bearings. The higher the number of bearings, the better the accuracy of calculated emitter location in spite of relatively high bearing errors for each DF sensor.

Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.

PubMed

Feng, Chengang; Yi, Mingdong; Yu, Shunyang; Hümmelgen, Ivo A; Zhang, Tong; Ma, Dongge

2008-04-01

We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices.

Soviet Material on Internal Wave Effects, Number 5, March 1976

DTIC Science & Technology

1976-03-15

Fig. 2. General view of the optoacoustic instrument. 1 - OKG-13 gas laser; 2, 3 - optics ; 4 - piezoceramic emitters; 5 - electronic unit; 6...operating principle f the ptoacoustical instrument is based on optical recording of the propagauon velocity of ultrasound in a measurement area...fluctuations of ilow velocity. 1-3 - longitudinal component from measurements by optical -acoustical instruments at depths of 5, 50, and 80 m; r , 4

Two-Dimensional Cadmium Chloride Nanosheets in Cadmium Telluride Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perkins, Craig L.; Beall, Carolyn; Reese, Matthew O.

In this paper we make use of a liquid nitrogen-based thermomechanical cleavage technique and a surface analysis cluster tool to probe in detail the tin oxide/emitter interface at the front of completed CdTe solar cells. We show that this thermomechanical cleavage occurs within a few angstroms of the SnO 2/emitter interface. An unexpectedly high concentration of chlorine at this interface, ~20%, was determined from a calculation that assumed a uniform chlorine distribution. Angle-resolved X-ray photoelectron spectroscopy was used to further probe the structure of the chlorine-containing layer, revealing that both sides of the cleave location are covered by one-third ofmore » a unit cell of pure CdCl 2, a thickness corresponding to about one Cl-Cd-Cl molecular layer. We interpret this result in the context of CdCl 2 being a true layered material similar to transition-metal dichalcogenides. Exposing cleaved surfaces to water shows that this Cl-Cd-Cl trilayer is soluble, raising questions pertinent to cell reliability. Our work provides new and unanticipated details about the structure and chemistry of front surface interfaces and should prove important to improving materials, processes, and reliability of next-generation CdTe-based solar cells.« less

Two-Dimensional Cadmium Chloride Nanosheets in Cadmium Telluride Solar Cells

DOE PAGES

Perkins, Craig L.; Beall, Carolyn; Reese, Matthew O.; ...

2017-05-12

In this paper we make use of a liquid nitrogen-based thermomechanical cleavage technique and a surface analysis cluster tool to probe in detail the tin oxide/emitter interface at the front of completed CdTe solar cells. We show that this thermomechanical cleavage occurs within a few angstroms of the SnO 2/emitter interface. An unexpectedly high concentration of chlorine at this interface, ~20%, was determined from a calculation that assumed a uniform chlorine distribution. Angle-resolved X-ray photoelectron spectroscopy was used to further probe the structure of the chlorine-containing layer, revealing that both sides of the cleave location are covered by one-third ofmore » a unit cell of pure CdCl 2, a thickness corresponding to about one Cl-Cd-Cl molecular layer. We interpret this result in the context of CdCl 2 being a true layered material similar to transition-metal dichalcogenides. Exposing cleaved surfaces to water shows that this Cl-Cd-Cl trilayer is soluble, raising questions pertinent to cell reliability. Our work provides new and unanticipated details about the structure and chemistry of front surface interfaces and should prove important to improving materials, processes, and reliability of next-generation CdTe-based solar cells.« less

Highly Efficient Broadband Yellow Phosphor Based on Zero-Dimensional Tin Mixed-Halide Perovskite.

PubMed

Zhou, Chenkun; Tian, Yu; Yuan, Zhao; Lin, Haoran; Chen, Banghao; Clark, Ronald; Dilbeck, Tristan; Zhou, Yan; Hurley, Joseph; Neu, Jennifer; Besara, Tiglet; Siegrist, Theo; Djurovich, Peter; Ma, Biwu

2017-12-27

Organic-inorganic hybrid metal halide perovskites have emerged as a highly promising class of light emitters, which can be used as phosphors for optically pumped white light-emitting diodes (WLEDs). By controlling the structural dimensionality, metal halide perovskites can exhibit tunable narrow and broadband emissions from the free-exciton and self-trapped excited states, respectively. Here, we report a highly efficient broadband yellow light emitter based on zero-dimensional tin mixed-halide perovskite (C 4 N 2 H 14 Br) 4 SnBr x I 6-x (x = 3). This rare-earth-free ionically bonded crystalline material possesses a perfect host-dopant structure, in which the light-emitting metal halide species (SnBr x I 6-x 4- , x = 3) are completely isolated from each other and embedded in the wide band gap organic matrix composed of C 4 N 2 H 14 Br - . The strongly Stokes-shifted broadband yellow emission that peaked at 582 nm from this phosphor, which is a result of excited state structural reorganization, has an extremely large full width at half-maximum of 126 nm and a high photoluminescence quantum efficiency of ∼85% at room temperature. UV-pumped WLEDs fabricated using this yellow emitter together with a commercial europium-doped barium magnesium aluminate blue phosphor (BaMgAl 10 O 17 :Eu 2+ ) can exhibit high color rendering indexes of up to 85.

MEMS Micropropulsion Activities at JPL

NASA Technical Reports Server (NTRS)

Mueller, Juergen; Chakraborty, Indrani; Vargo, Stephen; Bame, David; Marrese, Colleen; Tang, William C.

1999-01-01

A status of MEMS-based micropropulsion activities conducted at JPL will be given. These activities include work conducted on the so called Vaporizing Liquid Micro-Thruster (VLM) which recently underwent proof-of-concept testing, demonstrating the ability to vaporize water propellant at 2 W and 2 V. Micro-ion engine technologies, such m field emitter arrays and micro-grids are being studied. Focus in the field emitter area is on arrays able to survive in thruster plumes and micro-ion engine plasmas to serve as neutralizers aW engine cathodes. Integrated, batch-fabricated Ion repeller grid structures are being studied as well as different emitter tip materials are being investigated to meet these goals. A micro-isolation valve is being studied to isolate microspacecraft feed system during long interplanetary cruises, avoiding leakage and prolonging lifetime and reliability of such systems. This concept relies on the melting of a thin silicon barrier. Burst pressure values as high as 2,900 psig were obtained for these valves and power requirements to melt barriers ranging between 10 - 50 microns in thickness, as determined through thermal finite element calculations, varied between 10 - 30 W to be applied over a duration of merely 0.5 ms.

DC power limitation of the heterojunction bipolar transistor with dot geometry: Effect of base potential distribution on thermal runaway

NASA Astrophysics Data System (ADS)

Liou, L. L.; Jenkins, T.; Huang, C. I.

1997-06-01

The d.c. power limitation of a conventional HBT with dot geometry was studied theoretically using combined electro-thermal and transmission line models. In most cases, the thermal runaway occurs at a power level lower than that set by the intrinsic electronic property of the device. The dependence of the d.c. thermal runaway threshold power density, Pmax, on the emitter dot radius and emitter ballast resistance was calculated. Increasing emitter dot radius lowers Pmax. Although ballast resistance increases Pmax, the effect reduces as the emitter dot radius increases. This is caused by the non-uniform potential distribution in the base layer. When thermal runaway is considered, the nonuniform base-emitter potential offsets the improvement of the power handling capability by the physical ballast resistance. Conventional HBTs with a large radius (greater than 4 μm) exhibit a small Pmax caused by thermal effect. This threshold power density can be increased drastically by using the thermal shunt technique.

Ion Motion Induced Emittance Growth of Matched Electron Beams in Plasma Wakefields.

PubMed

An, Weiming; Lu, Wei; Huang, Chengkun; Xu, Xinlu; Hogan, Mark J; Joshi, Chan; Mori, Warren B

2017-06-16

Plasma-based acceleration is being considered as the basis for building a future linear collider. Nonlinear plasma wakefields have ideal properties for accelerating and focusing electron beams. Preservation of the emittance of nano-Coulomb beams with nanometer scale matched spot sizes in these wakefields remains a critical issue due to ion motion caused by their large space charge forces. We use fully resolved quasistatic particle-in-cell simulations of electron beams in hydrogen and lithium plasmas, including when the accelerated beam has different emittances in the two transverse planes. The projected emittance initially grows and rapidly saturates with a maximum emittance growth of less than 80% in hydrogen and 20% in lithium. The use of overfocused beams is found to dramatically reduce the emittance growth. The underlying physics that leads to the lower than expected emittance growth is elucidated.

Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

NASA Technical Reports Server (NTRS)

Rohatgi, A.; Meier, D. L.; Rai-Choudhury, P.; Fonash, S. J.; Singh, R.

1986-01-01

The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

Emittance and absorptance of NASA ceramic thermal barrier coating system. [for turbine cooling

NASA Technical Reports Server (NTRS)

Liebert, C. H.

1978-01-01

Spectral emittance measurements were made on a two-layer ceramic thermal barrier coating system consisting of a metal substrate, a NiCrAly bond coating and a yttria-stabilized zirconia ceramic coating. Spectral emittance data were obtained for the coating system at temperatures of 300 to 1590 K, ceramic thickness of zero to 0.076 centimeter, and wavelengths of 0.4 to 14.6 micrometers. The data were transformed into total hemispherical emittance values and correlated with respect to ceramic coating thickness and temperature using multiple regression curve fitting techniques. The results show that the ceramic thermal barrier coating system is highly reflective and significantly reduces radiation heat loads on cooled gas turbine engine components. Calculation of the radiant heat transfer within the nonisothermal, translucent ceramic coating material shows that the gas-side ceramic coating surface temperature can be used in heat transfer analysis of radiation heat loads on the coating system.

Organic light-emitting diodes for lighting: High color quality by controlling energy transfer processes in host-guest-systems

NASA Astrophysics Data System (ADS)

Weichsel, Caroline; Reineke, Sebastian; Furno, Mauro; Lüssem, Björn; Leo, Karl

2012-02-01

Exciton generation and transfer processes in a multilayer organic light-emitting diode (OLED) are studied in order to realize OLEDs with warm white color coordinates and high color-rendering index (CRI). We investigate a host-guest-system containing four phosphorescent emitters and two matrix materials with different transport properties. We show, by time-resolved spectroscopy, that an energy back-transfer from the blue emitter to the matrix materials occurs, which can be used to transport excitons to the other emitter molecules. Furthermore, we investigate the excitonic and electronic transfer processes by designing suitable emission layer stacks. As a result, we obtain an OLED with Commission Internationale de lÉclairage (CIE) coordinates of (0.444;0.409), a CRI of 82, and a spectrum independent of the applied current. The OLED shows an external quantum efficiency of 10% and a luminous efficacy of 17.4 lm/W at 1000 cd/m2.

Direct Observation of Ultralow Vertical Emittance using a Vertical Undulator - presentation slides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wootton, Kent

2015-09-17

Direct emittance measurement based on vertical undulator is discussed. Emittance was evaluated from peak ratios, the smallest measured being =0.9 ±0.3 pm rad. The angular distribution of undulator radiation departs from Gaussian approximations, a fact of which diffraction-limited light sources should be aware.

Pyrimidine-based twisted donor-acceptor delayed fluorescence molecules: a new universal platform for highly efficient blue electroluminescence.

PubMed

Park, In Seob; Komiyama, Hideaki; Yasuda, Takuma

2017-02-01

Deep-blue emitters that can harvest both singlet and triplet excited states to give high electron-to-photon conversion efficiencies are highly desired for applications in full-color displays and white lighting devices based on organic light-emitting diodes (OLEDs). Thermally activated delayed fluorescence (TADF) molecules based on highly twisted donor-acceptor (D-A) configurations are promising emitting dopants for the construction of efficient deep-blue OLEDs. In this study, a simple and versatile D-A system combining acridan-based donors and pyrimidine-based acceptors has been developed as a new platform for high-efficiency deep-blue TADF emitters. The designed pre-twisted acridan-pyrimidine D-A molecules exhibit small singlet-triplet energy splitting and high photoluminescence quantum yields, functioning as efficient deep-blue TADF emitters. The OLEDs utilizing these TADF emitters display bright blue electroluminescence with external quantum efficiencies of up to 20.4%, maximum current efficiencies of 41.7 cd A -1 , maximum power efficiencies of 37.2 lm W -1 , and color coordinates of (0.16, 0.23). The design strategy featuring such acridan-pyrimidine D-A motifs can offer great prospects for further developing high-performance deep-blue TADF emitters and TADF-OLEDs.

Polyethylene Naphthalate Scintillator: A Novel Detector for the Dosimetry of Radioactive Ophthalmic Applicators

PubMed Central

Flühs, Dirk; Flühs, Andrea; Ebenau, Melanie; Eichmann, Marion

2015-01-01

Background Dosimetric measurements in small radiation fields with large gradients, such as eye plaque dosimetry with β or low-energy photon emitters, require dosimetrically almost water-equivalent detectors with volumes of <1 mm3 and linear responses over several orders of magnitude. Polyvinyltoluene-based scintillators fulfil these conditions. Hence, they are a standard for such applications. However, they show disadvantages with regard to certain material properties and their dosimetric behaviour towards low-energy photons. Purpose, Materials and Methods Polyethylene naphthalate, recently recognized as a scintillator, offers chemical, physical and basic dosimetric properties superior to polyvinyltoluene. Its general applicability as a clinical dosimeter, however, has not been shown yet. To prove this applicability, extensive measurements at several clinical photon and electron radiation sources, ranging from ophthalmic plaques to a linear accelerator, were performed. Results For all radiation qualities under investigation, covering a wide range of dose rates, a linearity of the detector response to the dose was shown. Conclusion Polyethylene naphthalate proved to be a suitable detector material for the dosimetry of ophthalmic plaques, including low-energy photon emitters and other small radiation fields. Due to superior properties, it has the potential to replace polyvinyltoluene as the standard scintillator for such applications. PMID:27171681

Simultaneous determination of specific alpha and beta emitters by LSC-PLS in water samples.

PubMed

Fons-Castells, J; Tent-Petrus, J; Llauradó, M

2017-01-01

Liquid scintillation counting (LSC) is a commonly used technique for the determination of alpha and beta emitters. However, LSC has poor resolution and the continuous spectra for beta emitters hinder the simultaneous determination of several alpha and beta emitters from the same spectrum. In this paper, the feasibility of multivariate calibration by partial least squares (PLS) models for the determination of several alpha ( nat U, 241 Am and 226 Ra) and beta emitters ( 40 K, 60 Co, 90 Sr/ 90 Y, 134 Cs and 137 Cs) in water samples is reported. A set of alpha and beta spectra from radionuclide calibration standards were used to construct three PLS models. Experimentally mixed radionuclides and intercomparision materials were used to validate the models. The results had a maximum relative bias of 25% when all the radionuclides in the sample were included in the calibration set; otherwise the relative bias was over 100% for some radionuclides. The results obtained show that LSC-PLS is a useful approach for the simultaneous determination of alpha and beta emitters in multi-radionuclide samples. However, to obtain useful results, it is important to include all the radionuclides expected in the studied scenario in the calibration set. Copyright © 2016 Elsevier Ltd. All rights reserved.

Progress in reliable single emitters and laser bars for efficient CW-operation in the near-infrared emission range

NASA Astrophysics Data System (ADS)

Zorn, Martin; Hülsewede, Ralf; Pietrzak, Agnieszka; Meusel, Jens; Sebastian, Jürgen

2015-03-01

Laser bars, laser arrays, and single emitters are highly-desired light sources e.g. for direct material processing, pump sources for solid state and fiber lasers or medical applications. These sources require high output powers with optimal efficiency together with good reliability resulting in a long lifetime of the device. Desired wavelengths range from 760 nm in esthetic skin treatment over 915 nm, 940 nm and 976 nm to 1030 nm for direct material processing and pumping applications. In this publication we present our latest developments for the different application-defined wavelengths in continuouswave operation mode. At 760nm laser bars with 30 % filling factor and 1.5 mm resonator length show optical output powers around 90-100 W using an optimized design. For longer wavelengths between 915 nm and 1030 nm laser bars with 4 mm resonator length and 50 % filling factor show reliable output powers above 200 W. The efficiency reached lies above 60% and the slow axis divergence (95% power content) is below 7°. Further developments of bars tailored for 940 nm emission wavelength reach output powers of 350 W. Reliable single emitters for effective fiber coupling having emitter widths of 90 μm and 195 μm are presented. They emit optical powers of 12 W and 24 W, respectively, at emission wavelengths of 915 nm, 940 nm and 976 nm. Moreover, reliability tests of 90 μm-single emitters at a power level of 12W currently show a life time over 3500 h.

Emitter/absorber interface of CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao, E-mail: tsong241@gmail.com; Sites, James R.; Kanevce, Ana

The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interfacemore » defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These materials are predicted to yield higher voltages and would therefore be better candidates for the CdTe-cell emitter.« less

Ion Motion Induced Emittance Growth of Matched Electron Beams in Plasma Wakefields

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Weiming; Lu, Wei; Huang, Chengkun

2017-06-14

Plasma-based acceleration is being considered as the basis for building a future linear collider. Nonlinear plasma wakefields have ideal properties for accelerating and focusing electron beams. Preservation of the emittance of nano-Coulomb beams with nanometer scale matched spot sizes in these wakefields remains a critical issue due to ion motion caused by their large space charge forces. We use fully resolved quasistatic particle-in-cell simulations of electron beams in hydrogen and lithium plasmas, including when the accelerated beam has different emittances in the two transverse planes. The projected emittance initially grows and rapidly saturates with a maximum emittance growth of lessmore » than 80% in hydrogen and 20% in lithium. The use of overfocused beams is found to dramatically reduce the emittance growth. In conclusion, the underlying physics that leads to the lower than expected emittance growth is elucidated.« less

Emittance preservation in plasma-based accelerators with ion motion

DOE PAGES

Benedetti, C.; Schroeder, C. B.; Esarey, E.; ...

2017-11-01

In a plasma-accelerator-based linear collider, the density of matched, low-emittance, high-energy particle bunches required for collider applications can be orders of magnitude above the background ion density, leading to ion motion, perturbation of the focusing fields, and, hence, to beam emittance growth. By analyzing the response of the background ions to an ultrahigh density beam, analytical expressions, valid for nonrelativistic ion motion, are derived for the transverse wakefield and for the final (i.e., after saturation) bunch emittance. Analytical results are validated against numerical modeling. Initial beam distributions are derived that are equilibrium solutions, which require head-to-tail bunch shaping, enabling emittancemore » preservation with ion motion.« less

Si based GeSn light emitter: mid-infrared devices in Si photonics

NASA Astrophysics Data System (ADS)

Yu, S. Q.; Ghetmiri, S. A.; Du, W.; Margetis, J.; Zhou, Y.; Mosleh, A.; Al-Kabi, S.; Nazzal, A.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B.; Naseem, H. A.

2015-02-01

Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm2.

Recent advances in small molecule OLED-on-silicon microdisplays

NASA Astrophysics Data System (ADS)

Ghosh, Amalkumar P.; Ali, Tariq A.; Khayrullin, Ilyas; Vazan, Fridrich; Prache, Olivier F.; Wacyk, Ihor

2009-08-01

High resolution OLED-on-silicon microdisplay technology is unique and challenging since it requires very small subpixel dimensions (~ 2-5 microns). eMagin's OLED microdisplay is based on white top emitter architecture using small molecule organic materials. The devices are fabricated using high Tg materials. The devices are hermetically sealed with vacuum deposited thin film layers. LCD-type color filters are patterned using photolithography methods to generate primary R, G, B colors. Results of recent improvements in the OLED-on-silicon microdisplay technology, with emphasis on efficiencies, lifetimes, grey scale and CIE color coordinates for SVGA and SXGA resolution microdisplays is presented.

Fabrication and optimization of phosphorescent organic light emitting diodes for solid-state lighting applications

NASA Astrophysics Data System (ADS)

Bhansali, Unnat S.

Organic Light Emitting Diodes (OLEDs) have made tremendous progress over the last decade and are under consideration for use as solid-state lighting sources to replace the existing incandescent and fluorescent technology. Use of metal-organic phosphorescent complexes as bright emitters and efficient charge transporting organic semiconductors has resulted in OLEDs with internal quantum efficiency ˜ 100% and power efficiency ˜100 lm/W (green OLEDs) at 1000 cd/m2. For lighting applications, white OLEDs (WOLEDs) are required to have a color rendering index (CRI) > 80, correlated color temperature (CCT) (2700 ≤ WOLEDs ≤ 6500 °K), power efficiency > 100 lm/W and a lifetime > 25,000 hrs (at 70% of its original lumen value) at a brightness of 1000 cd/m2. Typically, high CRIs and high power efficiencies are obtained by either a combination of a blue fluorescent emitter with green and red phosphorescent emitters or a stack of blue, green and red phosphorescent emitters doped in a host material. In this work, we implement a single-emitter WOLEDs (SWOLEDs) approach by using monomer (blue) and broad excimer emissions (green and orange) from a self-sensitizing Pt-based phosphorescent complex, designed and synthesized by Prof. M.A. Omary's group. We have optimized and demonstrated high efficiency turquoise-blue OLEDs from monomer emission of Pt(ptp)2-bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) doped in a phosphine-oxide based host molecule and an electron transport molecule. The device peak power efficiency and external quantum efficiency were maintained >40 lm/W and >11%, respectively throughout the wide range of dopant concentrations (1% to 10%). A monotonic increase in the excimer/monomer emission intensity ratio is observed at the higher doping concentrations within 1%-10%, causing a small green-shift in the color. The peak performance of 60 -- 70 lm/W for the best optimized device represents the highest power efficiency known to date for blue OLEDs. Typically, the commercially available and most commonly used Ir-based emitters suffer from triplet-triplet annihilation and self-quenching issues due to their long triplet excited lifetimes (˜1 mus). The performance of these OLEDs is hence very sensitive to the dopant concentration. On the other hand, Pt(ptp)2 is a self-sensitizing, fast phosphor with triplet lifetimes ~100 ns and near unity quantum yield at room temperature. We have demonstrated high peak efficiency yellow OLEDs from undoped (neat) thin films of the emitter complex (>30 lm/W) and near 100% Internal Quantum Efficiency (IQE) with faster radiative recombination rate than doped films, thus proving the existence of self-sensitization in electroluminescence. We have successfully combined the monomer emission (low dopant concentrations) and excimer emission of Pt(ptp)2 to achieve high CRI SWOLEDs using a 2-layer and a 3-layer graded-doping design. The best color metrics were a CRI=62 and a CCT = 3452 K for a WOLED with the highest power efficiency = 31.3 lm/W and EQE = 17.4%, representing excellent performance for single-emitter WOLEDs.

Portable Infrared Reflectometer Designed and Manufactured for Evaluating Emittance in the Laboratory or in the Field

NASA Technical Reports Server (NTRS)

Jaworske, Donald A.

2000-01-01

The optical properties of materials play a key role in spacecraft thermal control. In space, radiant heat transfer is the only mode of heat transfer that can reject heat from a spacecraft. One of the key properties for defining radiant heat transfer is emittance, a measure of how efficiently a surface can reject heat in comparison to a perfect black body emitter. Heat rejection occurs in the infrared region of the spectrum, nominally in the range of 2 to 25 mm. To calculate emittance, one obtains the reflectance over this spectral range, calculates spectral absorptance by difference, and then uses Kirchhoff s Law and the Stefan-Boltzmann equation to calculate emittance. A new portable infrared reflectometer, the SOC 400t, was designed and manufactured to evaluate the emittance of surfaces and coatings in the laboratory or in the field. It was developed by Surface Optics Corporation under a contract with the NASA Glenn Research Center at Lewis Field to replace the Center s aging Gier-Dunkle DB-100 infrared reflectometer. The specifications for the new instrument include a wavelength range of 2 to 25 mm; reflectance repeatability of +/-1 percent; self-calibrating, near-normal spectral reflectance measurements; a full scan measurement time of 3.5 min, a sample size of 1.27 cm (0.5 in.); a spectral resolution selectable from 4, 8, 16, or 32/cm; and optical property characterization utilizing an automatic integration to calculate total emittance in a selectable temperature range.

Target tracking and pointing for arrays of phase-locked lasers

NASA Astrophysics Data System (ADS)

Macasaet, Van P.; Hughes, Gary B.; Lubin, Philip; Madajian, Jonathan; Zhang, Qicheng; Griswold, Janelle; Kulkarni, Neeraj; Cohen, Alexander; Brashears, Travis

2016-09-01

Arrays of phase-locked lasers are envisioned for planetary defense and exploration systems. High-energy beams focused on a threatening asteroid evaporate surface material, creating a reactionary thrust that alters the asteroid's orbit. The same system could be used to probe an asteroid's composition, to search for unknown asteroids, and to propel interplanetary and interstellar spacecraft. Phased-array designs are capable of producing high beam intensity, and allow beam steering and beam profile manipulation. Modular designs allow ongoing addition of emitter elements to a growing array. This paper discusses pointing control for extensible laser arrays. Rough pointing is determined by spacecraft attitude control. Lateral movement of the laser emitter tips behind the optical elements provides intermediate pointing adjustment for individual array elements and beam steering. Precision beam steering and beam formation is accomplished by coordinated phase modulation across the array. Added cells are incorporated into the phase control scheme by precise alignment to local mechanical datums using fast, optical relative position sensors. Infrared target sensors are also positioned within the datum scheme, and provide information about the target vector relative to datum coordinates at each emitter. Multiple target sensors allow refined determination of the target normal plane, providing information to the phase controller for each emitter. As emitters and sensors are added, local position data allows accurate prediction of the relative global position of emitters across the array, providing additional constraints to the phase controllers. Mechanical design and associated phase control that is scalable for target distance and number of emitters is presented.

First-principles engineering of charged defects for two-dimensional quantum technologies

NASA Astrophysics Data System (ADS)

Wu, Feng; Galatas, Andrew; Sundararaman, Ravishankar; Rocca, Dario; Ping, Yuan

2017-12-01

Charged defects in two-dimensional (2D) materials have emerging applications in quantum technologies such as quantum emitters and quantum computation. The advancement of these technologies requires a rational design of ideal defect centers, demanding reliable computation methods for the quantitatively accurate prediction of defect properties. We present an accurate, parameter-free, and efficient procedure to evaluate the quasiparticle defect states and thermodynamic charge transition levels of defects in 2D materials. Importantly, we solve critical issues that stem from the strongly anisotropic screening in 2D materials, that have so far precluded the accurate prediction of charge transition levels in these materials. Using this procedure, we investigate various defects in monolayer hexagonal boron nitride (h -BN ) for their charge transition levels, stable spin states, and optical excitations. We identify CBVN (nitrogen vacancy adjacent to carbon substitution of boron) to be the most promising defect candidate for scalable quantum bit and emitter applications.

Mask-less patterning of organic light emitting diodes using electrospray and selective biasing on pixel electrodes

NASA Astrophysics Data System (ADS)

Lee, Sangyeob; Koo, Hyun; Cho, Sunghwan

2015-04-01

Wet process of soluble organic light emitting diode (OLED) materials has attracted much attention due to its potential as a large-area manufacturing process with high productivity. Electrospray (ES) deposition is one of candidates of organic thin film formation process for OLED. However, to fabricate red, green, and blue emitters for color display, a fine metal mask is required during spraying emitter materials. We demonstrate a mask-less color pixel patterning process using ES of soluble OLED materials and selective biasing on pixel electrodes and a spray nozzle. We show red and green line patterns of OLED materials. It was found that selective patterning can be allowed by coulomb repulsion between nozzle and pixel. Furthermore, we fabricated blue fluorescent OLED devices by vacuum evaporation and ES processes. The device performance of ES processed OLED showed nearly identical current-voltage characteristics and slightly lower current efficiency compared to vacuum processed OLED.

Space-based detection of spoofing AIS signals using Doppler frequency

NASA Astrophysics Data System (ADS)

Guo, Shanzeng

2014-05-01

The Automatic Identification System (AIS) is a self-reporting system based on VHF radio to transmit a vessel's identity, position, speed, heading and other parameters to improve maritime domain awareness. However, AIS information can be programmatically spoofed by terrorists or other criminals, who often choose to masquerade as innocent civilians and exploit the vulnerabilities of military and civilian infrastructures for their purposes. Therefore, detecting and localizing a spoofing AIS ship become a critical and challenging issue for maritime security. This paper presents an algorithm to detect and geolocalize a spoofing AIS emitter using space-based AIS signals with its Doppler frequency. With an AIS signal sensor on a fast orbiting satellite, the measured AIS Doppler frequency of an AIS emitter can be used to define a double-napped cone of which the satellite is at its vertex and satellite velocity coincides with its axis, such that the theoretical Doppler frequency derived from the radial velocity to the AIS emitter matches the measured Doppler frequency. All such matches can only lie on either cone extending out from the satellite, which cuts the Earth's surface in two curves, so we know that the AIS emitter must lie somewhere on these curves. Two such AIS Doppler frequency measurements for the same stationary AIS emitter produce two valid curves which intersect at the position of the AIS emitter. Multiple Doppler frequency measurements can be used to better estimate the position fix of an AIS emitter, hence determine the spoofing AIS ship if the estimated position fix unreasonably differs from the position carried in its AIS message. A set of formulas are derived which relate an AIS emitter position to its Doppler frequency measurements.

Terahertz emission from ultrafast spin-charge current at a Rashba interface

NASA Astrophysics Data System (ADS)

Zhang, Qi; Jungfleisch, Matthias Benjamin; Zhang, Wei; Pearson, John E.; Wen, Haidan; Hoffmann, Axel

Ultrafast broadband terahertz (THz) radiation is highly desired in various fields from fundamental research in condensed matter physics to bio-chemical detection. Conventional ultrafast THz sources rely on either nonlinear optical effects or ultrafast charge currents in semiconductors. Recently, however, it was realized that ultrabroad-band THz radiation can be produced highly effectively by novel spintronics-based emitters that also make use of the electron's spin degree of freedom. Those THz-emitters convert a spin current flow into a terahertz electromagnetic pulse via the inverse spin-Hall effect. In contrast to this bulk conversion process, we demonstrate here that a femtosecond spin current pulse launched from a CoFeB layer can also generate terahertz transients efficiently at a two-dimensional Rashba interface between two non-magnetic materials, i.e., Ag/Bi. Those interfaces have been proven to be efficient means for spin- and charge current interconversion.

Microcavity enhanced single photon emission from two-dimensional WSe2

NASA Astrophysics Data System (ADS)

Flatten, L. C.; Weng, L.; Branny, A.; Johnson, S.; Dolan, P. R.; Trichet, A. A. P.; Gerardot, B. D.; Smith, J. M.

2018-05-01

Atomically flat semiconducting materials such as monolayer WSe2 hold great promise for novel optoelectronic devices. Recently, quantum light emission has been observed from bound excitons in exfoliated WSe2. As part of developing optoelectronic devices, the control of the radiative properties of such emitters is an important step. Here, we report the coupling of a bound exciton in WSe2 to open microcavities. We use a range of radii of curvature in the plano-concave cavity geometry with mode volumes in the λ3 regime, giving Purcell factors of up to 8 while increasing the photon flux five-fold. Additionally, we determine the quantum efficiency of the single photon emitter to be η=0.46 ±0.03 . Our findings pave the way to cavity-enhanced monolayer based single photon sources for a wide range of applications in nanophotonics and quantum information technologies.

Morphing Surfaces Enable Acoustophoretic Contactless Transport of Ultrahigh-Density Matter in Air

PubMed Central

Foresti, Daniele; Sambatakakis, Giorgio; Bottan, Simone; Poulikakos, Dimos

2013-01-01

The controlled contactless transport of heavy drops and particles in air is of fundamental interest and has significant application potential. Acoustic forces do not rely on special material properties, but their utility in transporting heavy matter in air has been restricted by low power and poor controllability. Here we present a new concept of acoustophoresis, based on the morphing of a deformable reflector, which exploits the low reaction forces and low relaxation time of a liquid with enhanced surface tension through the use of thin overlaid membrane. An acoustically induced, mobile deformation (dimple) on the reflector surface enhances the acoustic field emitted by a line of discretized emitters and enables the countinuos motion of heavy levitated samples. With such interplay of emitters and reflecting soft-structure, a 5 mm steel sphere (0.5 grams) was contactlessly transported in air solely by acoustophoresis. PMID:24212104

Grain Size Modulation and Interfacial Engineering of CH3 NH3 PbBr3 Emitter Films through Incorporation of Tetraethylammonium Bromide.

PubMed

Jamaludin, Nur Fadilah; Yantara, Natalia; Ng, Yan Fong; Li, Mingjie; Goh, Teck Wee; Thirumal, Krishnamoorthy; Sum, Tze Chien; Mathews, Nripan; Soci, Cesare; Mhaisalkar, Subodh

2018-05-07

Metal halide perovskites have demonstrated breakthrough performances as absorber and emitter materials for photovoltaic and display applications respectively. However, despite the low manufacturing cost associated with solution-based processing, the propensity for defect formation with this technique has led to an increasing need for defect passivation. Here, we present an inexpensive and facile method to remedy surface defects through a postdeposition treatment process using branched alkylammonium cation species. The simultaneous realignment of interfacial energy levels upon incorporation of tetraethylammonium bromide onto the surface of CH 3 NH 3 PbBr 3 films contributes favorably toward the enhancement in overall light-emitting diode characteristics, achieving maximum luminance, current efficiency, and external quantum efficiency values of 11 000 cd m -2 , 0.68 cd A -1 , and 0.16 %, respectively. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Towards graphane field emitters

PubMed Central

Ding, Shuyi; Li, Chi; Zhou, Yanhuai; Collins, Clare M.; Kang, Moon H.; Parmee, Richard J.; Zhang, Xiaobing; Milne, William I.; Wang, Baoping

2015-01-01

We report on the improved field emission performance of graphene foam (GF) following transient exposure to hydrogen plasma. The enhanced field emission mechanism associated with hydrogenation has been investigated using Fourier transform infrared spectroscopy, plasma spectrophotometry, Raman spectroscopy, and scanning electron microscopy. The observed enhanced electron emissionhas been attributed to an increase in the areal density of lattice defects and the formation of a partially hydrogenated, graphane-like material. The treated GF emitter demonstrated a much reduced macroscopic turn-on field (2.5 V μm–1), with an increased maximum current density from 0.21 mA cm–2 (pristine) to 8.27 mA cm–2 (treated). The treated GFs vertically orientated protrusions, after plasma etching, effectively increased the local electric field resulting in a 2.2-fold reduction in the turn-on electric field. The observed enhancement is further attributed to hydrogenation and the subsequent formation of a partially hydrogenated structured 2D material, which advantageously shifts the emitter work function. Alongside augmentation of the nominal crystallite size of the graphitic superstructure, surface bound species are believed to play a key role in the enhanced emission. The hydrogen plasma treatment was also noted to increase the emission spatial uniformity, with an approximate four times reduction in the per unit area variation in emission current density. Our findings suggest that plasma treatments, and particularly hydrogen and hydrogen-containing precursors, may provide an efficient, simple, and low cost means of realizing enhanced nanocarbon-based field emission devices via the engineered degradation of the nascent lattice, and adjustment of the surface work function. PMID:28066543

Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flow

NASA Astrophysics Data System (ADS)

Thornton, Robert L.; Mosby, William J.; Chung, Harlan F.

1989-10-01

The authors present fabrication techniques and device performance for a novel transistor structure, the lateral heterojunction bipolar transistor. The lateral heterojunctions are formed by impurity-induced disordering of a GaAs base layer sandwiched between two AlGaAs layers. These transistor structures exhibit current gains of 14 for base widths of 0.74 micron. Transistor action in this device occurs parallel to the surface of the device structure. The active base region of the structure is completely submerged, resulting in a reduction of surface recombination as a mechanism for gain reduction in the device. Impurity-induced disordering is used to widen the bandgap of the alloy in the emitter and collector, resulting in an improvement of the emitter injection efficiency. Since the device is based entirely on a surface diffusion process, the device is completely planar and has no steps involving etching of the III-V alloy material. These advantages lead this device to be considered as a candidate for optoelectronic integration applications. The transistor device functions as a buried heterostructure laser, with a threshold current as low as 6 mA for a 1.4-micron stripe.

Thin film coatings for space electrical power system applications

NASA Technical Reports Server (NTRS)

Gulino, Daniel A.

1989-01-01

This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

Thin film coatings for space electrical power system applications

NASA Technical Reports Server (NTRS)

Gulino, Daniel A.

1988-01-01

This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

Emittance measurements of the CLIO electron beam

NASA Astrophysics Data System (ADS)

Chaput, R.; Devanz, G.; Joly, P.; Kergosien, B.; Lesrel, J.

1997-02-01

We have designed a setup to measure the transverse emittance at the CLIO accelerator exit, based on the "3 gradients" method. The beam transverse size is measured simply by scanning it with a steering coil across a fixed jaw and recording the transmitted current, at various quadrupole strengths. A code then performs a complete calculation of the emittance using the transfer matrix of the quadrupole instead of the usual classical lens approximation. We have studied the influence of various parameters on the emittance: Magnetic field on the e-gun and the peak current. We have also improved a little the emittance by replacing a mismatched pipe between the buncher and accelerating section to avoid wake-field effects; The resulting improvements of the emittance have led to an increase in the FEL emitted power.

Recent progress of 638-nm high-power broad area laser diodes in Mitsubishi Electric

NASA Astrophysics Data System (ADS)

Kuramoto, Kyosuke; Abe, Shinji; Miyashita, Motoharu; Nishida, Takehiro; Yagi, Tetsuya

2018-02-01

Laser based displays have gathered much attention because only the displays can express full color gamut of Ultra-HDTV, ITU-R BT.2020. One of the displays uses the lasers under pulse such as a single spatial light modulator (SLM) projector, and the other does ones under CW such as a multiple SLM projector and a liquid crystal display. Both types require high-power lasers because brightness is the most important factor in the market. We developed two types of 638-nm multi-emitter high-power BA-LDs assembled on Φ9.0-TO, that is, triple emitter for pulse and dual emitter for CW. The triple emitter LD emitted exceeding 6.0 W peak power under 25°C, frequency of 120 Hz, and duty of 30%. At high temperature, 55°C, the peak power was approximately 2.9W. The dual emitter emitted exceeding 3.0W under 25°C, CW. It emitted up to 1.7 W at 55°C. WPE of the dual emitter reached 40.5% at Tc of 25°C, which is the world highest in 638-nm LD under CW to the best of our knowledge, although that of the triple emitter was 38.1%. Both LDs may be suitable for laser based display applications.

Doping-free white organic light-emitting diodes without blue molecular emitter: An unexplored approach to achieve high performance via exciplex emission

NASA Astrophysics Data System (ADS)

Luo, Dongxiang; Xiao, Ye; Hao, Mingming; Zhao, Yu; Yang, Yibin; Gao, Yuan; Liu, Baiquan

2017-02-01

Doping-free white organic light-emitting diodes (DF-WOLEDs) are promising for the low-cost commercialization because of their simplified device structures. However, DF-WOLEDs reported thus far in the literature are based on the use of blue single molecular emitters, whose processing can represent a crucial point in device manufacture. Herein, DF-WOLEDs without the blue single molecular emitter have been demonstrated by managing a blue exciplex system. For the single-molecular-emitter (orange or yellow emitter) DF-WOLEDs, (i) a color rendering index (CRI) of 81 at 1000 cd/m2 can be obtained, which is one of the highest for the single-molecular-emitter WOLEDs, or (ii) a high efficiency of 35.4 lm/W can be yielded. For the dual-molecular-emitter (yellow/red emitters) DF-WOLED, a high CRI of 85 and low correlated color temperature of 2376 K at 1000 cd/m2 have been simultaneously achieved, which has not been reported by previous DF-WOLEDs. Such presented findings may unlock an alternative avenue to the simplified but high-performance WOLEDs.

Parametric investigation of nano-gap thermophotovoltaic energy conversion

NASA Astrophysics Data System (ADS)

Lau, Japheth Z.-J.; Bong, Victor N.-S.; Wong, Basil T.

2016-03-01

Nano-gap thermophotovoltaic energy converters have the potential to be excellent generators of electrical power due to the near-field radiative effect which enhances the transfer of energy from one medium to another. However, there is still much to learn about this new form of energy converter. This paper seeks to investigate three parameters that affect the performance of nano-gap thermophotovoltaic devices: the emitter material, the thermophotovoltaic cell material, and the cell thickness. Furthermore, the temperature profiles in insulated thin films (cells exposed to below-band gap near-field radiation) are analysed. It was discovered that an effective emitter material is one that has a high generalised emissivity value and is also able to couple with the TPV cell material through surface polaritons while a cell material's electrical properties and its thickness has heavy bearing on its internal quantum efficiency. In regards to the temperature profile, the heat-flux absorbed causes a rise in temperature across the thin film, but is insufficient to generate a temperature gradient across the film.

Aeolian removal of dust from radiator surfaces on Mars

NASA Technical Reports Server (NTRS)

Gaier, James R.; Perez-Davis, Marla E.; Rutledge, Sharon K.; Hotes, Deborah

1990-01-01

Simulated radiator surfaces made of arc-textured Cu and Nb-1 percent-Zr and ion beam textured graphite and C-C composite were fabricated and their integrated spectral emittance characterized from 300 to 3000 K. A thin layer of aluminum oxide, basalt, or iron (III) oxide dust was then deposited on them, and they were subjected to low pressure winds in the Martian Surface Wind Tunnel. It was found that dust deposited on simulated radiator surfaces may or may not seriously lower their integrated spectral emittance, depending upon the characteristics of the dust. With Al2O3 there is no appreciable degradation of emittance on a dusted sample, with basaltic dust there is a 10 to 20 percent degradation, and with Fe2O3 a 20 to 40 percent degradation. It was also found that very high winds on dusted highly textured surfaces can result in their abrasion. Degradation in emittance due to abrasion was found to vary with radiator material. Arc-textured Cu and Nb-1 percent Zr was found to be more susceptible to emittance degradation than graphite or C-C composite. The most abrasion occurred at low angles, peaking at the 22.5 deg test samples.

Newly Designed Apparatus for Measuring the Angular Dependent Surface Emittance in a Wide Wavelength Range and at Elevated Temperatures up to 1400°C

NASA Astrophysics Data System (ADS)

Rydzek, M.; Stark, T.; Arduini-Schuster, M.; Manara, J.

2012-11-01

An optimized apparatus for measuring the angular dependent surface emittance up to elevated temperatures has been designed. This emittance measurement apparatus (EMMA) is coupled to a Bruker Vertex 70v FTIR-spectrometer, so that a wavelength range from about 2 μm up to 25 μm is accessible. The central part of the new apparatus is a double walled, stainless steel vessel which can be evacuated or filled with various gases or with air. Inside the vessel a cylindrical tube furnace is pivot-mounted on a system of discs, for automatically rotating up to an angle of 180°. This allows both, the measurement at different detection angles (0° to 85°) and a consecutive measurement of sample and black-body reference without ventilating and opening the pot. The aim of this work is to present the newly designed emittance measurement apparatus which enables the determination of the angular dependent spectral emittance of opaque samples at temperatures up to 1400 °C. Next to the setup of the apparatus, the measurement results of various materials are presented at different detection angles.

Mutagenicity and in vivo toxicity of combined particulate and semivolatile organic fractions of gasoline and diesel engine emissions.

PubMed

Seagrave, JeanClare; McDonald, Jacob D; Gigliotti, Andrew P; Nikula, Kristen J; Seilkop, Steven K; Gurevich, Michael; Mauderly, Joe L

2002-12-01

Exposure to engine emissions is associated with adverse health effects. However, little is known about the relative effects of emissions produced by different operating conditions, fuels, or technologies. Rapid screening techniques are needed to compare the biological effects of emissions with different characteristics. Here, we examined a set of engine emission samples using conventional bioassays. The samples included combined particulate material and semivolatile organic compound fractions of emissions collected from normal- and high-emitter gasoline and diesel vehicles collected at 72 degrees F, and from normal-emitter groups collected at 30 degrees F. The relative potency of the samples was determined by statistical analysis of the dose-response curves. All samples induced bacterial mutagenicity, with a 10-fold range of potency among the samples. Responses to intratracheal instillation in rats indicated generally parallel rankings of the samples by multiple endpoints reflecting cytotoxic, inflammatory, and lung parenchymal changes, allowing selection of a more limited set of parameters for future studies. The parameters selected to assess oxidative stress and macrophage function yielded little useful information. Responses to instillation indicated little difference in potency per unit of combined particulate material and semivolatile organic compound mass between normal-emitter gasoline and diesel vehicles, or between emissions collected at different temperatures. However, equivalent masses of emissions from high-emitter vehicles of both types were more potent than those from normal-emitters. While preliminary in terms of assessing contributions of different emissions to health hazards, the results indicate that a subset of this panel of assays will be useful in providing rapid, cost-effective feedback on the biological impact of modified technology.

Polyethylene Naphthalate Scintillator: A Novel Detector for the Dosimetry of Radioactive Ophthalmic Applicators.

PubMed

Flühs, Dirk; Flühs, Andrea; Ebenau, Melanie; Eichmann, Marion

2015-09-01

Dosimetric measurements in small radiation fields with large gradients, such as eye plaque dosimetry with β or low-energy photon emitters, require dosimetrically almost water-equivalent detectors with volumes of <1 mm(3) and linear responses over several orders of magnitude. Polyvinyltoluene-based scintillators fulfil these conditions. Hence, they are a standard for such applications. However, they show disadvantages with regard to certain material properties and their dosimetric behaviour towards low-energy photons. Polyethylene naphthalate, recently recognized as a scintillator, offers chemical, physical and basic dosimetric properties superior to polyvinyltoluene. Its general applicability as a clinical dosimeter, however, has not been shown yet. To prove this applicability, extensive measurements at several clinical photon and electron radiation sources, ranging from ophthalmic plaques to a linear accelerator, were performed. For all radiation qualities under investigation, covering a wide range of dose rates, a linearity of the detector response to the dose was shown. Polyethylene naphthalate proved to be a suitable detector material for the dosimetry of ophthalmic plaques, including low-energy photon emitters and other small radiation fields. Due to superior properties, it has the potential to replace polyvinyltoluene as the standard scintillator for such applications.

Quantum many-body correlations in collective phonon-excitations

NASA Astrophysics Data System (ADS)

Droenner, Leon; Kabuss, Julia; Carmele, Alexander

2018-02-01

We present a theoretical study of a many-emitter phonon laser based on optically driven semiconductor quantum dots placed within an acoustic nanocavity. A transformation of the phonon laser Hamiltonian leads to a Tavis-Cummings type interaction with an unexpected additional many-emitter energy shift. This many-emitter interaction with the cavity mode results in a variety of phonon resonances which dependent strongly on the number of participating emitters. These collective resonances show the highest phonon output. Furthermore, we show that the output can be increased even more via lasing at the two phonon resonance.

Thermophotovoltaic energy conversion system having a heavily doped n-type region

DOEpatents

DePoy, David M.; Charache, Greg W.; Baldasaro, Paul F.

2000-01-01

A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.

Monte Carlo calculation of the sensitivity of a commercial dose calibrator to gamma and beta radiation.

PubMed

Laedermann, Jean-Pascal; Valley, Jean-François; Bulling, Shelley; Bochud, François O

2004-06-01

The detection process used in a commercial dose calibrator was modeled using the GEANT 3 Monte Carlo code. Dose calibrator efficiency for gamma and beta emitters, and the response to monoenergetic photons and electrons was calculated. The model shows that beta emitters below 2.5 MeV deposit energy indirectly in the detector through bremsstrahlung produced in the chamber wall or in the source itself. Higher energy beta emitters (E > 2.5 MeV) deposit energy directly in the chamber sensitive volume, and dose calibrator sensitivity increases abruptly for these radionuclides. The Monte Carlo calculations were compared with gamma and beta emitter measurements. The calculations show that the variation in dose calibrator efficiency with measuring conditions (source volume, container diameter, container wall thickness and material, position of the source within the calibrator) is relatively small and can be considered insignificant for routine measurement applications. However, dose calibrator efficiency depends strongly on the inner-wall thickness of the detector.

Discrete quantum dot like emitters in monolayer MoSe{sub 2}: Spatial mapping, magneto-optics, and charge tuning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Branny, Artur; Kumar, Santosh; Gerardot, Brian D., E-mail: b.d.gerardot@hw.ac.uk

Transition metal dichalcogenide monolayers such as MoSe{sub 2}, MoS{sub 2}, and WSe{sub 2} are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report on spectrally sharp, spatially localized emission in monolayer MoSe{sub 2}. We find this quantum dot-like emission in samples exfoliated onto gold substrates and also suspended flakes. Spatial mapping shows a correlation between the location of emitters and the existence of wrinkles (strained regions) in the flake. We tune the emission properties in magnetic and electric fields applied perpendicular to the monolayer plane. We extract an exciton g-factor of the discrete emitters close to −4,more » as for 2D excitons in this material. In a charge tunable sample, we record discrete jumps on the meV scale as charges are added to the emitter when changing the applied voltage.« less

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

PubMed

Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

2017-12-13

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

VO2-based radiative thermal transistor with a semi-transparent base

NASA Astrophysics Data System (ADS)

Prod'homme, Hugo; Ordonez-Miranda, Jose; Ezzahri, Younès; Drévillon, Jérémie; Joulain, Karl

2018-05-01

We study a radiative thermal transistor analogous to an electronic one made of a VO2 base placed between two silica semi-infinite plates playing the roles of the transistor collector and emitter. The fact that VO2 exhibits an insulator to metal transition is exploited to modulate and/or amplify heat fluxes between the emitter and the collector, by applying a thermal current on the VO2 base. We extend the work of precedent studies considering the case where the base can be semi-transparent so that heat can be exchanged directly between the collector and the emitter. Both near and far field cases are considered leading to 4 typical regimes resulting from the fact that the emitter-base and base-collector separation distances can be larger or smaller than the thermal wavelength for a VO2 layer opaque or semi-transparent. Thermal currents variations with the base temperatures are calculated and analyzed. It is found that the transistor can operate in an amplification mode as already stated in [1] or in a switching mode as seen in [2]. An optimum configuration for the base thickness and separation distance maximizing the thermal transistor modulation factor is found.

Strong Coupling and Entanglement of Quantum Emitters Embedded in a Nanoantenna-Enhanced Plasmonic Cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hensen, Matthias; Heilpern, Tal; Gray, Stephen K.

Establishing strong coupling between spatially separated and thus selectively addressable quantum emitters is a key ingredient to complex quantum optical schemes in future technologies. Insofar as many plasmonic nanostructures are concerned, however, the energy transfer and mutual interaction strength between distant quantum emitters can fail to provide strong coupling. Here, based on mode hybridization, the longevity and waveguide character of an elliptical plasmon cavity are combined with intense and highly localized field modes of suitably designed nanoantennas. Based on FDTD simulations a quantum emitter-plasmon coupling strength hg = 16.7 meV is reached while simultaneously keeping a small plasmon resonance linemore » width h gamma(s) = 33 meV. This facilitates strong coupling, and quantum dynamical simulations reveal an oscillatory exchange of excited state population arid a notable degree of entanglement between the quantum emitters spatially separated by 1.8 mu m, i.e., about twice the operating wavelength.« less

Magnetic field effect in organic light emitting diodes based on donor-acceptor exciplexes showing thermally activated delayed fluorescence

NASA Astrophysics Data System (ADS)

Baniya, S.; Pang, Z.; Sun, D.; Basel, T.; Zhai, Y.; Kwon, O.; Choi, H.; Vardeny, Z. V.

2016-09-01

A new type of organic light-emitting diode (OLED) has emerged that shows enhanced operational stability and large internal quantum efficiency approaching 100%, which is based on exciplexes in donor-acceptor (D-A) blends having thermally activated delayed fluorescence (TADF) when doped with fluorescent emitters. We have investigated magnetoelectroluminescence (MEL) and magneto-conductivity in such TADF-based OLEDs, as well as magnetophotoluminescence (MPL) in thin films based on the OLEDs active layers, with various fluorescence emitters. We found that both MEL and MPL responses are thermally activated with substantially lower activation energy compared to that in the pristine undoped D-A exciplex host blend. In addition, both MPL and MEL steeply decrease with the emitters' concentration. This indicates the existence of a loss mechanism, whereby the triplet charge-transfer state in the D-A exciplex host blend may directly decay to the lowest, non-emissive triplet state of the additive fluorescent emitter molecules.

A Time-Space Domain Information Fusion Method for Specific Emitter Identification Based on Dempster-Shafer Evidence Theory.

PubMed

Jiang, Wen; Cao, Ying; Yang, Lin; He, Zichang

2017-08-28

Specific emitter identification plays an important role in contemporary military affairs. However, most of the existing specific emitter identification methods haven't taken into account the processing of uncertain information. Therefore, this paper proposes a time-space domain information fusion method based on Dempster-Shafer evidence theory, which has the ability to deal with uncertain information in the process of specific emitter identification. In this paper, radars will generate a group of evidence respectively based on the information they obtained, and our main task is to fuse the multiple groups of evidence to get a reasonable result. Within the framework of recursive centralized fusion model, the proposed method incorporates a correlation coefficient, which measures the relevance between evidence and a quantum mechanical approach, which is based on the parameters of radar itself. The simulation results of an illustrative example demonstrate that the proposed method can effectively deal with uncertain information and get a reasonable recognition result.

Investigating of the Field Emission Performance on Nano-Apex Carbon Fiber and Tungsten Tips

NASA Astrophysics Data System (ADS)

Mousa, Marwan S.; Alnawasreh, Shadi; Madanat, Mazen A.; Al-Rabadi, Anas N.

2015-10-01

Field electron emission measurements have been performed on carbon-based and tungsten microemitters. Several samples of both types of emitters with different apex radii have been obtained employing electrolytic etching techniques using sodium hydroxide (NaOH) solution with different molarities depending on the material used. A suitable, home-built, field electron microscope (FEM) with 10 mm tip to screen separation distance was used to electrically characterize the electron emitters. Measurements were carried out under ultra high vacuum (UHV) conditions with base pressure of 10-9 mbar. The current-voltage characteristics (I-V) presented as Fowler-Nordheim (FN) type plots, and field electron emission images have been recorded. In this work, initial comparison of the field electron emission performance of these micro and nanoemitters has been carried out, with the aim of obtaining a reliable, stable and long life powerful electron source. We compare the apex radii measured from the micrographs obtained from the SEM images to those extracted from the FN-type _I-V_plots for carbon fibers and tungsten tips.

High-efficiency, radiation-resistant GaAs space cells

NASA Technical Reports Server (NTRS)

Bertness, K. A.; Ristow, M. Ladle; Grounner, M.; Kuryla, M. S.; Werthen, J. G.

1991-01-01

Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradation after radiation are available, particularly for cells with efficiencies exceeding 20 percent (one-sun, AMO). Often the cell performance is optimized for the highest beginning-of-life (BOL) efficiency, despite the unknown effect of such design on end-of-life (EOL) efficiencies. The results of a study of the radiation effects on p-n GaAs cells are presented. The EOL efficiency of GaAs space cell can be increased by adjusting materials growth parameters, resulting in a demonstration of 16 percent EOL efficiency at one-sun, AMO. Reducing base doping levels to below 3 x 10(exp 17)/cu m and decreasing emitter thickness to 0.3 to 0.5 micron for p-n cells led to significant improvements in radiation hardness as measured by EOL/BOL efficiency ratios for irradiation of 10(exp -15)/sq cm electrons at 1 MeV. BOL efficiency was not affected by changes in emitter thickness but did improve with lower base doping.

Systems and Methods for Implementing Robust Carbon Nanotube-Based Field Emitters

NASA Technical Reports Server (NTRS)

Kristof, Valerie (Inventor); Manohara, Harish (Inventor); Toda, Risaku (Inventor)

2015-01-01

Systems and methods in accordance with embodiments of the invention implement carbon nanotube-based field emitters. In one embodiment, a method of fabricating a carbon nanotube field emitter includes: patterning a substrate with a catalyst, where the substrate has thereon disposed a diffusion barrier layer; growing a plurality of carbon nanotubes on at least a portion of the patterned catalyst; and heating the substrate to an extent where it begins to soften such that at least a portion of at least one carbon nanotube becomes enveloped by the softened substrate.

Coulomb-coupled quantum-dot thermal transistors

NASA Astrophysics Data System (ADS)

Zhang, Yanchao; Yang, Zhimin; Zhang, Xin; Lin, Bihong; Lin, Guoxing; Chen, Jincan

2018-04-01

A quantum-dot thermal transistor consisting of three Coulomb-coupled quantum dots coupled to the respective electronic reservoirs by tunnel contacts is established. The heat flows through the collector and emitter can be controlled by the temperature of the base. It is found that a small change in the base heat flow can induce a large heat flow change in the collector and emitter. The huge amplification factor can be obtained by optimizing the Coulomb interaction between the collector and the emitter or by decreasing the tunneling rate at the base. The proposed quantum-dot thermal transistor may open up potential applications in low-temperature solid-state thermal circuits at the nanoscale.

A new light emitting diode-light emitting diode portable carbon dioxide gas sensor based on an interchangeable membrane system for industrial applications.

PubMed

de Vargas-Sansalvador, I M Pérez; Fay, C; Phelan, T; Fernández-Ramos, M D; Capitán-Vallvey, L F; Diamond, D; Benito-Lopez, F

2011-08-12

A new system for CO(2) measurement (0-100%) based on a paired emitter-detector diode arrangement as a colorimetric detection system is described. Two different configurations were tested: configuration 1 (an opposite side configuration) where a secondary inner-filter effect accounts for CO(2) sensitivity. This configuration involves the absorption of the phosphorescence emitted from a CO(2)-insensitive luminophore by an acid-base indicator and configuration 2 wherein the membrane containing the luminophore is removed, simplifying the sensing membrane that now only contains the acid-base indicator. In addition, two different instrumental configurations have been studied, using a paired emitter-detector diode system, consisting of two LEDs wherein one is used as the light source (emitter) and the other is used in reverse bias mode as the light detector. The first configuration uses a green LED as emitter and a red LED as detector, whereas in the second case two identical red LEDs are used as emitter and detector. The system was characterised in terms of sensitivity, dynamic response, reproducibility, stability and temperature influence. We found that configuration 2 presented a better CO(2) response in terms of sensitivity. Copyright © 2011 Elsevier B.V. All rights reserved.

Manipulating the Electronic Excited State Energies of Pyrimidine-Based Thermally Activated Delayed Fluorescence Emitters To Realize Efficient Deep-Blue Emission.

PubMed

Komatsu, Ryutaro; Ohsawa, Tatsuya; Sasabe, Hisahiro; Nakao, Kohei; Hayasaka, Yuya; Kido, Junji

2017-02-08

The development of efficient and robust deep-blue emitters is one of the key issues in organic light-emitting devices (OLEDs) for environmentally friendly, large-area displays or general lighting. As a promising technology that realizes 100% conversion from electrons to photons, thermally activated delayed fluorescence (TADF) emitters have attracted considerable attention. However, only a handful of examples of deep-blue TADF emitters have been reported to date, and the emitters generally show large efficiency roll-off at practical luminance over several hundreds to thousands of cd m -2 , most likely because of the long delayed fluorescent lifetime (τ d ). To overcome this problem, we molecularly manipulated the electronic excited state energies of pyrimidine-based TADF emitters to realize deep-blue emission and reduced τ d . We then systematically investigated the relationships among the chemical structure, properties, and device performances. The resultant novel pyrimidine emitters, called Ac-XMHPMs (X = 1, 2, and 3), contain different numbers of bulky methyl substituents at acceptor moieties, increasing the excited singlet (E S ) and triplet state (E T ) energies. Among them, Ac-3MHPM, with a high E T of 2.95 eV, exhibited a high external quantum efficiency (η ext,max ) of 18% and an η ext of 10% at 100 cd m -2 with Commission Internationale de l'Eclairage chromaticity coordinates of (0.16, 0.15). These efficiencies are among the highest values to date for deep-blue TADF OLEDs. Our molecular design strategy provides fundamental guidance to design novel deep-blue TADF emitters.

ALMA deep field in SSA22: Blindly detected CO emitters and [C II] emitter candidates

NASA Astrophysics Data System (ADS)

Hayatsu, Natsuki H.; Matsuda, Yuichi; Umehata, Hideki; Yoshida, Naoki; Smail, Ian; Swinbank, A. Mark; Ivison, Rob; Kohno, Kotaro; Tamura, Yoichi; Kubo, Mariko; Iono, Daisuke; Hatsukade, Bunyo; Nakanishi, Kouichiro; Kawabe, Ryohei; Nagao, Tohru; Inoue, Akio K.; Takeuchi, Tsutomu T.; Lee, Minju; Ao, Yiping; Fujimoto, Seiji; Izumi, Takuma; Yamaguchi, Yuki; Ikarashi, Soh; Yamada, Toru

2017-06-01

We report the identification of four millimeter line-emitting galaxies with the Atacama Large Milli/submillimeter Array (ALMA) in SSA22 Field (ADF22). We analyze the ALMA 1.1-mm survey data, with an effective survey area of 5 arcmin2, frequency ranges of 253.1-256.8 and 269.1-272.8 GHz, angular resolution of 0{^''.}7 and rms noise of 0.8 mJy beam-1 at 36 km s-1 velocity resolution. We detect four line-emitter candidates with significance levels above 6σ. We identify one of the four sources as a CO(9-8) emitter at z = 3.1 in a member of the proto-cluster known in this field. Another line emitter with an optical counterpart is likely a CO(4-3) emitter at z = 0.7. The other two sources without any millimeter continuum or optical/near-infrared counterpart are likely to be [C II] emitter candidates at z = 6.0 and 6.5. The equivalent widths of the [C II] candidates are consistent with those of confirmed high-redshift [C II] emitters and candidates, and are a factor of 10 times larger than that of the CO(9-8) emitter detected in this search. The [C II] luminosity of the candidates are 4-7 × 108 L⊙. The star formation rates (SFRs) of these sources are estimated to be 10-20 M⊙ yr-1 if we adopt an empirical [C II] luminosity-SFR relation. One of them has a relatively low S/N ratio, but shows features characteristic of emission lines. Assuming that at least one of the two candidates is a [C II] emitter, we derive a lower limit of [C II]-based star formation rate density (SFRD) at z ˜ 6. The resulting value of >10-2 M⊙ yr-1 Mpc-3 is consistent with the dust-uncorrected UV-based SFRD. Future millimeter/submillimeter surveys can be used to detect a number of high-redshift line emitters, with which to study the star formation history in the early universe.

Gamma compensated, self powered neutron detector

DOEpatents

Brown, Donald P.

1977-01-01

An improved, self-powered, gamma compensated, neutron detector having two electrically conductive concentric cylindrical electrodes and a central rod emitter formed from a material which emits beta particles when bombarded by neutrons. The outer electrode and emitter are maintained at a common potential and the neutron representative current is furnished at the inner cylindrical electrode which serves as a collector. The two concentric cylindrical electrodes are designed to exhibit substantially equal electron emission induced by Compton scattering under neutron bombardment to supply the desired gamma compensation.

EMIIM Wetting Properties of & Their Effect on Electrospray Thruster Design

DTIC Science & Technology

2012-03-21

materials can be characterized using the surface tension and contact or “wetting" angle formed when a liquid droplet comes in contact with a solid surface...Illustration of the instantaneous dipole formed by electron motion in a hy- drogen atom(left) and how these instantaneous dipoles can attract each other...the extractor grid and of like charge to the emitter. A Taylor cone formed using an internally wetted emitter and the ionic liquid BMI-BG4 is shown in

High efficiency blue and white phosphorescent organic light emitting devices

NASA Astrophysics Data System (ADS)

Eom, Sang-Hyun

Organic light-emitting devices (OLEDs) have important applications in full-color flat-panel displays and as solid-state lighting sources. Achieving high efficiency deep-blue phosphorescent OLEDs (PHOLEDs) is necessary for high performance full-color displays and white light sources with a high color rendering index (CRI); however it is more challenging compared to the longer wavelength light emissions such as green and red due to the higher energy excitations for the deep-blue emitter as well as the weak photopic response of deep-blue emission. This thesis details several effective strategies to enhancing efficiencies of deep-blue PHOLEDs based on iridium(III) bis(4',6'-difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate (FIr6), which are further employed to demonstrate high efficiency white OLEDs by combining the deep-blue emitter with green and red emitters. First, we have employed 1,1-bis-(di-4-tolylaminophenyl) cyclohexane (TAPC) as the hole transporting material to enhance electron and triplet exciton confinement in Fir6-based PHOLEDs, which increased external quantum efficiency up to 18 %. Second, dual-emissive-layer (D-EML) structures consisting of an N,N -dicarbazolyl-3,5-benzene (mCP) layer doped with 4 wt % FIr6 and a p-bis (triphenylsilyly)benzene (UGH2) layer doped with 25 wt % FIr6 was employed to maximize exciton generation in the emissive layer. Combined with the p-i-n device structure, high power efficiencies of (25 +/- 2) lm/W at 100 cd/m2 and (20 +/- 2) lm/W at 1000 cd/m 2 were achieved. Moreover, the peak external quantum efficiency of (20 +/- 1) % was achieved by employing tris[3-(3-pyridyl)mesityl]borane (3TPYMB) as the electron transporting material, which further improves the exciton confinement in the emissive layer. With Cs2CO3 doping in the 3TPYMB layer to greatly increase its electrical conductivity, a peak power efficiency up to (36 +/- 2) lm/W from the deep-blue PHOLED was achieved, which also maintains Commission Internationale de L'Eclairage (CIE) coordinates of (0.16, 0.28). High efficiency white PHOLEDs are also demonstrated by incorporating green and red phosphorescent emitters together with the deep-blue emitter FIr6. Similar to the FIr6-only devices, the D-EML structure with high triplet energy charge transport materials leads to a maximum external quantum efficiency of (19 +/- 1) %. Using the p-i-n device structure, a peak power efficiency of (40 +/- 2) lm/W and (36 +/- 2) lm/W at 100 cd/m2 were achieved, and the white PHOLED possesses a CRI of 79 and CIE coordinates of (0.37, 0.40). The limited light extraction from the planar-type OLEDs is also one of the remaining challenges to the OLED efficiency. Here we have developed a simple soft lithography technique to fabricate a transparent, close-packed hemispherical microlens arrays. The application of such microlens arrays to the glass surface of the large-area fluorescent OLEDs enhanced the light extraction efficiency up to (70 +/- 7)%. It is also shown that the light extraction efficiency of the OLEDs is affected by microlens contact angle, OLEDs size, and detailed layer structure of the OLEDs.

Strongly coupling a cavity to inhomogeneous ensembles of emitters: Potential for long-lived solid-state quantum memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diniz, I.; Portolan, S.; Auffeves, A.

2011-12-15

We investigate theoretically the coupling of a cavity mode to a continuous distribution of emitters. We discuss the influence of the emitters' inhomogeneous broadening on the existence and on the coherence properties of the polaritonic peaks. We find that their coherence depends crucially on the shape of the distribution and not only on its width. Under certain conditions the coupling to the cavity protects the polaritonic states from inhomogeneous broadening, resulting in a longer storage time for a quantum memory based on emitter ensembles. When two different ensembles of emitters are coupled to the resonator, they support a peculiar collectivemore » dark state, which is also very attractive for the storage of quantum information.« less

Light emission from silicon: Some perspectives and applications

NASA Astrophysics Data System (ADS)

Fiory, A. T.; Ravindra, N. M.

2003-10-01

Research on efficient light emission from silicon devices is moving toward leading-edge advances in components for nano-optoelectronics and related areas. A silicon laser is being eagerly sought and may be at hand soon. A key advantage is in the use of silicon-based materials and processing, thereby using high yield and low-cost fabrication techniques. Anticipated applications include an optical emitter for integrated optical circuits, logic, memory, and interconnects; electro-optic isolators; massively parallel optical interconnects and cross connects for integrated circuit chips; lightwave components; high-power discrete and array emitters; and optoelectronic nanocell arrays for detecting biological and chemical agents. The new technical approaches resolve a basic issue with native interband electro-optical emission from bulk Si, which competes with nonradiative phonon- and defect-mediated pathways for electron-hole recombination. Some of the new ways to enhance optical emission efficiency in Si diode devices rely on carrier confinement, including defect and strain engineering in the bulk material. Others use Si nanocrystallites, nanowires, and alloying with Ge and crystal strain methods to achieve the carrier confinement required to boost radiative recombination efficiency. Another approach draws on the considerable progress that has been made in high-efficiency, solar-cell design and uses the reciprocity between photo- and light-emitting diodes. Important advances are also being made with silicon-oxide materials containing optically active rare-earth impurities.

Novel high-brightness fiber coupled diode laser device

NASA Astrophysics Data System (ADS)

Haag, Matthias; Köhler, Bernd; Biesenbach, Jens; Brand, Thomas

2007-02-01

High brightness becomes more and more important in diode laser applications for fiber laser pumping and materials processing. For OEM customers fiber coupled devices have great advantages over direct beam modules: the fiber exit is a standardized interface, beam guiding is easy with nearly unlimited flexibility. In addition to the transport function the fiber serves as homogenizer: the beam profile of the laser radiation emitted from a fiber is symmetrical with highly repeatable beam quality and pointing stability. However, efficient fiber coupling requires an adaption of the slow-axis beam quality to the fiber requirements. Diode laser systems based on standard 10mm bars usually employ beam transformation systems to rearrange the highly asymmetrical beam of the laser bar or laser stack. These beam transformation systems (prism arrays, lens arrays, fiber bundles etc.) are expensive and become inefficient with increasing complexity. This is especially true for high power devices with small fiber diameters. On the other hand, systems based on single emitters are claimed to have good potential in cost reduction. Brightness of the inevitable fiber bundles, though, is limited due to inherent fill-factor losses. At DILAS a novel diode laser device has been developed combining the advantages of diode bars and single emitters: high brightness at high reliability with single emitter cost structure. Heart of the device is a specially tailored laser bar (T-Bar), which epitaxial and lateral structure was designed such that only standard fast- and slow-axis collimator lenses are required to couple the beam into a 200μm fiber. Up to 30 of these T-Bars of one wavelength can be combined to reach a total of > 500W ex fiber in the first step. Going to a power level of today's single emitter diodes even 1kW ex 200μm fiber can be expected.

Electron emission from ferroelectrics - a review

NASA Astrophysics Data System (ADS)

Riege, H.

1994-02-01

The strong pulsed emission of electrons from the surface of ferroelectric (FE) materials was discovered at CERN in 1987. Since then many aspects and properties of the method of generation and propagation of electron beams from FE have been studied experimentally. The method is based on macroscopic charge separation and self-emission of electrons under the influence of their own space-charge fields. Hence, this type of emission is not limited by the Langmuir-Child law as are conventional emission methods. Charge separation and electron emission can be achieved by rapid switching of the spontaneous, ferroelectric polarization. Polarization switching may be induced by application of electrical-field or mechanical-pressure pulses, as well as by thermal heating or laser illumination of the ferroelectric emitter. At higher emission intensities plasma formation assists the FE emission and leads to a strong growth of emitted current amplitude, which is no longer limited by the FE material and the surface properties. The most attractive features of FE emission are robustness and ease of manipulation of the emitter cathodes which can be transported through atmospheric air and used without any problems in vacuum, low-pressure gas or plasma environments. Large-area arrangements of multiple emitters, switched in interleaved mode, can produce electron beams of any shape, current amplitude or time structure. The successful application of FE emission in accelerator technology has been demonstrated experimentally in several cases, e.g. for triggering high-power gas switches, for photocathodes in electron guns, and for electron-beam generators intended to generate, neutralize and enhance ion beams in ion sources and ion linacs. Other applications can be envisaged in microwave power generators and in the fields of electronics and vacuum microelectronics.

Remote detection of single emitters via optical waveguides

NASA Astrophysics Data System (ADS)

Then, Patrick; Razinskas, Gary; Feichtner, Thorsten; Haas, Philippe; Wild, Andreas; Bellini, Nicola; Osellame, Roberto; Cerullo, Giulio; Hecht, Bert

2014-05-01

The integration of lab-on-a-chip technologies with single-molecule detection techniques may enable new applications in analytical chemistry, biotechnology, and medicine. We describe a method based on the reciprocity theorem of electromagnetic theory to determine and optimize the detection efficiency of photons emitted by single quantum emitters through truncated dielectric waveguides of arbitrary shape positioned in their proximity. We demonstrate experimentally that detection of single quantum emitters via such waveguides is possible, confirming the predicted behavior of the detection efficiency. Our findings blaze the trail towards efficient lensless single-emitter detection compatible with large-scale optofluidic integration.

Aperture Shield Materials Characterized and Selected for Solar Dynamic Space Power System

NASA Technical Reports Server (NTRS)

1995-01-01

The aperture shield in a solar dynamic space power system is necessary to prevent thermal damage to the heat receiver should the concentrated solar radiation be accidentally or intentionally focused outside of the heat receiver aperture opening and onto the aperture shield itself. Characterization of the optical and thermal properties of candidate aperture shield materials was needed to support the joint U.S./Russian solar dynamic space power effort for Mir. The specific objective of testing performed at the NASA Lewis Research Center was to identify a high-temperature material with a low specular reflectance, a low solar absorptance, and a high spectral emittance so that during an off-pointing event, the amount of solar energy reflecting off the aperture shield would be small, the ratio of solar absorptance to spectral emittance would provide the lowest possible equilibrium temperature, and the integrity of the aperture shield would remain intact.

Purely organic electroluminescent material realizing 100% conversion from electricity to light

PubMed Central

Kaji, Hironori; Suzuki, Hajime; Fukushima, Tatsuya; Shizu, Katsuyuki; Suzuki, Katsuaki; Kubo, Shosei; Komino, Takeshi; Oiwa, Hajime; Suzuki, Furitsu; Wakamiya, Atsushi; Murata, Yasujiro; Adachi, Chihaya

2015-01-01

Efficient organic light-emitting diodes have been developed using emitters containing rare metals, such as platinum and iridium complexes. However, there is an urgent need to develop emitters composed of more abundant materials. Here we show a thermally activated delayed fluorescence material for organic light-emitting diodes, which realizes both approximately 100% photoluminescence quantum yield and approximately 100% up-conversion of the triplet to singlet excited state. The material contains electron-donating diphenylaminocarbazole and electron-accepting triphenyltriazine moieties. The typical trade-off between effective emission and triplet-to-singlet up-conversion is overcome by fine-tuning the highest occupied molecular orbital and lowest unoccupied molecular orbital distributions. The nearly zero singlet–triplet energy gap, smaller than the thermal energy at room temperature, results in an organic light-emitting diode with external quantum efficiency of 29.6%. An external quantum efficiency of 41.5% is obtained when using an out-coupling sheet. The external quantum efficiency is 30.7% even at a high luminance of 3,000 cd m−2. PMID:26477390

Blue emitting 1,8-naphthalimides with electron transport properties for organic light emitting diode applications

NASA Astrophysics Data System (ADS)

Ulla, Hidayath; Kiran, M. Raveendra; Garudachari, B.; Ahipa, T. N.; Tarafder, Kartick; Adhikari, Airody Vasudeva; Umesh, G.; Satyanarayan, M. N.

2017-09-01

In this article, the synthesis, characterization and use of two novel naphthalimides as electron-transporting emitter materials for organic light emitting diode (OLED) applications are reported. The molecules were obtained by substituting electron donating chloro-phenoxy group at the C-4 position. A detailed optical, thermal, electrochemical and related properties were systematically studied. Furthermore, theoretical calculations (DFT) were performed to get a better understanding of the electronic structures. The synthesized molecules were used as electron transporters and emitters in OLEDs with three different device configurations. The devices with the molecules showed blue emission with efficiencies of 1.89 cdA-1, 0.98 lmW-1, 0.71% at 100 cdm-2. The phosphorescent devices with naphthalimides as electron transport materials displayed better performance in comparison to the device without any electron transporting material and were analogous with the device using standard electron transporting material, Alq3. The results demonstrate that the naphthalimides could play a significant part in the progress of OLEDs.

ELECTRONIC INTEGRATING CIRCUIT

DOEpatents

Englemann, R.H.

1963-08-20

An electronic integrating circuit using a transistor with a capacitor connected between the emitter and collector through which the capacitor discharges at a rate proportional to the input current at the base is described. Means are provided for biasing the base with an operating bias and for applying a voltage pulse to the capacitor for charging to an initial voltage. A current dividing diode is connected between the base and emitter of the transistor, and signal input terminal means are coupled to the juncture of the capacitor and emitter and to the base of the transistor. At the end of the integration period, the residual voltage on said capacitor is less by an amount proportional to the integral of the input signal. Either continuous or intermittent periods of integration are provided. (AEC)

Further Studies on the Effect of SiN x Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oh, Jaewon; Dauksher, Bill; Bowden, Stuart

We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiN x refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-smore » was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 x 10 21 cm -3), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). In conclusion, the emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.« less

Further Studies on the Effect of SiN x Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation

DOE PAGES

Oh, Jaewon; Dauksher, Bill; Bowden, Stuart; ...

2017-01-11

We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiN x refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-smore » was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 x 10 21 cm -3), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). In conclusion, the emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.« less

Measured emittance dependence on injection method in laser plasma accelerators

NASA Astrophysics Data System (ADS)

Barber, Samuel; van Tilborg, Jeroen; Schroeder, Carl; Lehe, Remi; Tsai, Hai-En; Swanson, Kelly; Steinke, Sven; Nakamura, Kei; Geddes, Cameron; Benedetti, Carlo; Esarey, Eric; Leemans, Wim

2017-10-01

The success of many laser plasma accelerator (LPA) based applications relies on the ability to produce electron beams with excellent 6D brightness, where brightness is defined as the ratio of charge to the product of the three normalized emittances. As such, parametric studies of the emittance of LPA generated electron beams are essential. Profiting from a stable and tunable LPA setup, combined with a carefully designed single-shot transverse emittance diagnostic, we present a direct comparison of charge dependent emittance measurements of electron beams generated by two different injection mechanisms: ionization injection and shock induced density down-ramp injection. Notably, the measurements reveal that ionization injection results in significantly higher emittance. With the down-ramp injection configuration, emittances less than 1 micron at spectral charge densities up to 2 pC/MeV were measured. This work was supported by the U.S. DOE under Contract No. DE-AC02-05CH11231, by the NSF under Grant No. PHY-1415596, by the U.S. DOE NNSA, DNN R&D (NA22), and by the Gordon and Betty Moore Foundation under Grant ID GBMF4898.

Continued advances in high brightness fiber-coupled laser modules for efficient pumping of fiber and solid-state lasers

NASA Astrophysics Data System (ADS)

Hemenway, M.; Chen, Z.; Urbanek, W.; Dawson, D.; Bao, L.; Kanskar, M.; DeVito, M.; Martinsen, R.

2018-02-01

Both the fibber laser and diode-pumped solid-state laser market continue to drive advances in pump diode module brightness. We report on the continued progress by nLIGHT to develop and deliver the highest brightness diode-laser pumps using single-emitter technology. Continued advances in multimode laser diode technology [13] and fiber-coupling techniques have enabled higher emitter counts in the element packages, enabling us to demonstrate 305 W into 105 μm - 0.16 NA. This brightness improvement is achieved by leveraging our prior-reported package re-optimization, allowing an increase in the emitter count from two rows of nine emitters to two rows of twelve emitters. Leveraging the two rows off twelve emitter architecture,, product development has commenced on a 400 W into 200 μm - 00.16 NA package. Additionally, the advances in pump technology intended for CW Yb-doped fiber laser pumping has been leveraged to develop the highest brightness 793 nm pump modules for 2 μm Thulium fiber laser pumping, generating 150 W into 200 μm - 0.18 NA and 100 W into 105 μm - 0.15 NA. Lastly, renewed interest in direct diode materials processing led us to experiment with wavelength multiplexing our existing state of the art 200 W, 105 μm - 00.15 NA package into a combined output of 395 WW into 105 μm - 0.16 NA.

II-VI Semiconductor Superlattices

DTIC Science & Technology

1992-12-01

N. Otsuka, H. icon, J. Ding, and A.V. Nurmikko, " Blue /Green Injection Lasers and Light Emitting Diodes" J. Vac. Sci. Technology B, 10(2) March/April...34Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters" AppI. Phys. Lett. 60(23) 8 June 1992, p. 2825...characteristics of this contact scheme have been demon- strated tI)gether with their use Jn both blue ,/groen light lip emitting diodes and diode laser:- The

One-Shot Multiple Borylation toward BN-Doped Nanographenes.

PubMed

Matsui, Kohei; Oda, Susumu; Yoshiura, Kazuki; Nakajima, Kiichi; Yasuda, Nobuhiro; Hatakeyama, Takuji

2018-01-31

One-shot double, triple, and quadruple borylation reactions of triarylamines were developed through a judicious choice of boron source and Brønsted base. With the aid of borylation reactions, a variety of BN-doped nanographenes were synthesized in two steps from commercially available starting materials. An organic light-emitting diode device employing BN-doped nanographene as an emitter exhibited deep pure-blue emission at 460 nm, with CIE coordinates of (0.13, 0.11), and an external quantum efficiency of 18.3%.

Modulation characteristics of graphene-based thermal emitters

NASA Astrophysics Data System (ADS)

Mahlmeister, Nathan Howard; Lawton, Lorreta Maria; Luxmoore, Isaac John; Nash, Geoffrey Richard

2016-01-01

We have investigated the modulation characteristics of the emission from a graphene-based thermal emitter both experimentally and through simulations using finite element method modelling. Measurements were performed on devices containing square multilayer graphene emitting areas, with the devices driven by a pulsed DC drive current over a range of frequencies. Simulations show that the dominant heat path is from the emitter to the underlying substrate, and that the thermal resistance between the graphene and the substrate determines the modulation characteristics. This is confirmed by measurements made on devices in which the emitting area is encapsulated by hexagonal boron nitride.

Control of fluorescence in quantum emitter and metallic nanoshell hybrids for medical applications

NASA Astrophysics Data System (ADS)

Singh, Mahi R.; Guo, Jiaohan; J. Cid, José M.; De Hoyos Martinez, Jesús E.

2017-03-01

We study the light emission from a quantum emitter and double metallic nanoshell hybrid systems. Quantum emitters act as local sources which transmit their light efficiently due to a double nanoshell near field. The double nanoshell consists of a dielectric core and two outer nanoshells. The first nanoshell is made of a metal, and the second spacer nanoshell is made of a dielectric material or human serum albumin. We have calculated the fluorescence emission for a quantum emitter-double nanoshell hybrid when it is injected in an animal or a human body. Surface plasmon polariton resonances in the double nanoshell are calculated using Maxwell's equations in the quasi-static approximation, and the fluorescence emission is evaluated using the density matrix method in the presence of dipole-dipole interactions. We have compared our theory with two fluorescence experiments in hybrid systems in which the quantum emitter is Indocyanine Green or infrared fluorescent molecules. The outer spacer nanoshell of double metallic nanoshells consists of silica and human serum albumin with variable thicknesses. Our theory explains the enhancement of fluorescence spectra in both experiments. We find that the thickness of the spacer nanoshell layer increases the enhancement when the fluorescence decreases. The enhancement of the fluorescence depends on the type of quantum emitter, spacer layer, and double nanoshell. We also found that the peak of the fluorescence spectrum can be shifted by changing the shape and the size of the nanoshell. The fluorescence spectra can be switched from one peak to two peaks by removing the degeneracy of excitonic states in the quantum emitter. Hence, using these properties, one can use these hybrids as sensing and switching devices for applications in medicine.

High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays.

PubMed

Yardimci, Nezih Tolga; Lu, Hong; Jarrahi, Mona

2016-11-07

We present a high-power and broadband photoconductive terahertz emitter operating at telecommunication optical wavelengths, at which compact and high-performance fiber lasers are commercially available. The presented terahertz emitter utilizes an ErAs:InGaAs substrate to achieve high resistivity and short carrier lifetime characteristics required for robust operation at telecommunication optical wavelengths. It also uses a two-dimensional array of plasmonic nano-antennas to offer significantly higher optical-to-terahertz conversion efficiencies compared to the conventional photoconductive emitters, while maintaining broad operation bandwidths. We experimentally demonstrate pulsed terahertz radiation over 0.1-5 THz frequency range with the power levels as high as 300  μ W. This is the highest-reported terahertz radiation power from a photoconductive emitter operating at telecommunication optical wavelengths.

High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays

PubMed Central

Yardimci, Nezih Tolga; Lu, Hong; Jarrahi, Mona

2016-01-01

We present a high-power and broadband photoconductive terahertz emitter operating at telecommunication optical wavelengths, at which compact and high-performance fiber lasers are commercially available. The presented terahertz emitter utilizes an ErAs:InGaAs substrate to achieve high resistivity and short carrier lifetime characteristics required for robust operation at telecommunication optical wavelengths. It also uses a two-dimensional array of plasmonic nano-antennas to offer significantly higher optical-to-terahertz conversion efficiencies compared to the conventional photoconductive emitters, while maintaining broad operation bandwidths. We experimentally demonstrate pulsed terahertz radiation over 0.1–5 THz frequency range with the power levels as high as 300 μW. This is the highest-reported terahertz radiation power from a photoconductive emitter operating at telecommunication optical wavelengths. PMID:27916999

MEMS-based IR-sources

NASA Astrophysics Data System (ADS)

Weise, Sebastian; Steinbach, Bastian; Biermann, Steffen

2016-03-01

The series JSIR350 sources are MEMS based infrared emitters. These IR sources are characterized by a high radiation output. Thus, they are excellent for NDIR gas analysis and are ideally suited for using with our pyro-electric or thermopile detectors. The MEMS chips used in Micro-Hybrid's infrared emitters consist of nano-amorphous carbon (NAC). The MEMS chips are produced in the USA. All Micro-Hybrid Emitter are designed and specified to operate up to 850°C. The improvements we have made in the source's packaging enable us to provide IR sources with the best performance on the market. This new technology enables us to seal the housings of infrared radiation sources with soldered infrared filters or windows and thus cause the parts to be impenetrable to gases. Micro-Hybrid provide various ways of adapting our MEMS based infrared emitter JSIR350 to customer specifications, like specific burn-in parameters/characteristic, different industrial standard housings, producible with customized cap, reflector or pin-out.

Tunneling modulation of a quantum-well transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Qiu, J.; Wang, C. Y.; Holonyak, N.

2016-11-01

Different than the Bardeen and Brattain transistor (1947) with the current gain depending on the ratio of the base carrier spontaneous recombination lifetime to the emitter-collector transit time, the Feng and Holonyak transistor laser current gain depends upon the base electron-hole (e-h) stimulated recombination, the base dielectric relaxation transport, and the collector stimulated tunneling. For the n-p-n transistor laser tunneling operation, the electron-hole pairs are generated at the collector junction under the influence of intra-cavity photon-assisted tunneling, with electrons drifting to the collector and holes drifting to the base. The excess charge in the base lowers the emitter junction energy barrier, allowing emitter electron injection into the base and satisfying charge neutrality via base dielectric relaxation transport (˜femtoseconds). The excess electrons near the collector junction undergo stimulated recombination at the base quantum-well or transport to the collector, thus supporting tunneling current amplification and optical modulation of the transistor laser.

A Precise Calibration Technique for Measuring High Gas Temperatures

NASA Technical Reports Server (NTRS)

Gokoglu, Suleyman A.; Schultz, Donald F.

2000-01-01

A technique was developed for direct measurement of gas temperatures in the range of 2050 K 2700 K with improved accuracy and reproducibility. The technique utilized the low-emittance of certain fibrous materials, and the uncertainty of the technique was United by the uncertainty in the melting points of the materials, i.e., +/-15 K. The materials were pure, thin, metal-oxide fibers whose diameters varied from 60 microns to 400 microns in the experiments. The sharp increase in the emittance of the fibers upon melting was utilized as indication of reaching a known gas temperature. The accuracy of the technique was confirmed by both calculated low emittance values of transparent fibers, of order 0.01, up to a few degrees below their melting point and by the fiber-diameter independence of the results. This melting-point temperature was approached by increments not larger than 4 K, which was accomplished by controlled increases of reactant flow rates in hydrogen-air and/or hydrogen-oxygen flames. As examples of the applications of the technique, the gas-temperature measurements were used: (a) for assessing the uncertainty in inferring gas temperatures from thermocouple measurements, and (b) for calibrating an IR camera to measure gas temperatures. The technique offers an excellent calibration reference for other gas-temperature measurement methods to improve their accuracy and reliably extending their temperature range of applicability.

A Precise Calibration Technique for Measuring High Gas Temperatures

NASA Technical Reports Server (NTRS)

Gokoglu, Suleyman A.; Schultz, Donald F.

1999-01-01

A technique was developed for direct measurement of gas temperatures in the range of 2050 K - 2700 K with improved accuracy and reproducibility. The technique utilized the low-emittance of certain fibrous Materials, and the uncertainty of the technique was limited by the uncertainty in the melting points of the materials, i.e., +/- 15 K. The materials were pure, thin, metal-oxide fibers whose diameters varied from 60 mm to 400 mm in the experiments. The sharp increase in the emittance of the fibers upon melting was utilized as indication of reaching a known gas temperature. The accuracy of the technique was confirmed by both calculated low emittance values of transparent fibers, of order 0.01, up to a few degrees below their melting point and by the fiber-diameter independence of the results. This melting-point temperature was approached by increments not larger than 4 K, which was accomplished by controlled increases of reactant flow rates in hydrogen-air and/or hydrogen- oxygen flames. As examples of the applications of the technique, the gas-temperature measurements were used (a) for assessing the uncertainty in infering gas temperatures from thermocouple measurements, and (b) for calibrating an IR camera to measure gas temperatures. The technique offers an excellent calibration reference for other gas-temperature measurement methods to improve their accuracy and reliably extending their temperature range of applicability.

Solar energy conversion with photon-enhanced thermionic emission

NASA Astrophysics Data System (ADS)

Kribus, Abraham; Segev, Gideon

2016-07-01

Photon-enhanced thermionic emission (PETE) converts sunlight to electricity with the combined photonic and thermal excitation of charge carriers in a semiconductor, leading to electron emission over a vacuum gap. Theoretical analyses predict conversion efficiency that can match, or even exceed, the efficiency of traditional solar thermal and photovoltaic converters. Several materials have been examined as candidates for radiation absorbers and electron emitters, with no conclusion yet on the best set of materials to achieve high efficiency. Analyses have shown the complexity of the energy conversion and transport processes, and the significance of several loss mechanisms, requiring careful control of material properties and optimization of the device structure. Here we survey current research on PETE modeling, materials, and device configurations, outline the advances made, and stress the open issues and future research needed. Based on the substantial progress already made in this young topic, and the potential of high conversion efficiency based on theoretical performance limits, continued research in this direction is very promising and may yield a competitive technology for solar electricity generation.

Infrared spectral normal emittance/emissivity comparison

NASA Astrophysics Data System (ADS)

Hanssen, L.; Wilthan, B.; Filtz, J.-R.; Hameury, J.; Girard, F.; Battuello, M.; Ishii, J.; Hollandt, J.; Monte, C.

2016-01-01

The National Measurement Institutes (NMIs) of the United States, Germany, France, Italy and Japan, have joined in an inter-laboratory comparison of their infrared spectral emittance scales. This action is part of a series of supplementary inter-laboratory comparisons (including thermal conductivity and thermal diffusivity) sponsored by the Consultative Committee on Thermometry (CCT) Task Group on Thermophysical Quantities (TG-ThQ). The objective of this collaborative work is to strengthen the major operative National Measurement Institutes' infrared spectral emittance scales and consequently the consistency of radiative properties measurements carried out worldwide. The comparison has been performed over a spectral range of 2 μm to 14 μm, and a temperature range from 23 °C to 800 °C. Artefacts included in the comparison are potential standards: oxidized Inconel, boron nitride, and silicon carbide. The measurement instrumentation and techniques used for emittance scales are unique for each NMI, including the temperature ranges covered as well as the artefact sizes required. For example, all three common types of spectral instruments are represented: dispersive grating monochromator, Fourier transform and filter-based spectrometers. More than 2000 data points (combinations of material, wavelength and temperature) were compared. Ninety-eight percent (98%) of the data points were in agreement, with differences to weighted mean values less than the expanded uncertainties calculated from the individual NMI uncertainties and uncertainties related to the comparison process. Main text To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCT, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

NASA Technical Reports Server (NTRS)

Frez, Clifford F.; Soibel, Alexander; Belenky, Gregory; Shterengas, Leon; Kipshidze, Gela

2010-01-01

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

Calculation of day and night emittance values

NASA Technical Reports Server (NTRS)

Kahle, Anne B.

1986-01-01

In July 1983, the Thermal Infrared Multispectral Scanner (TIMS) was flown over Death Valley, California on both a midday and predawn flight within a two-day period. The availability of calibrated digital data permitted the calculation of day and night surface temperature and surface spectral emittance. Image processing of the data included panorama correction and calibration to radiance using the on-board black bodies and the measured spectral response of each channel. Scene-dependent isolated-point noise due to bit drops, was located by its relatively discontinuous values and replaced by the average of the surrounding data values. A method was developed in order to separate the spectral and temperature information contained in the TIMS data. Night and day data sets were processed. The TIMS is unique in allowing collection of both spectral emittance and thermal information in digital format with the same airborne scanner. For the first time it was possible to produce day and night emittance images of the same area, coregistered. These data add to an understanding of the physical basis for the discrimination of difference in surface materials afforded by TIMS.

An experimental approach to improve the Monte Carlo modelling of offline PET/CT-imaging of positron emitters induced by scanned proton beams

NASA Astrophysics Data System (ADS)

Bauer, J.; Unholtz, D.; Kurz, C.; Parodi, K.

2013-08-01

We report on the experimental campaign carried out at the Heidelberg Ion-Beam Therapy Center (HIT) to optimize the Monte Carlo (MC) modelling of proton-induced positron-emitter production. The presented experimental strategy constitutes a pragmatic inverse approach to overcome the known uncertainties in the modelling of positron-emitter production due to the lack of reliable cross-section data for the relevant therapeutic energy range. This work is motivated by the clinical implementation of offline PET/CT-based treatment verification at our facility. Here, the irradiation induced tissue activation in the patient is monitored shortly after the treatment delivery by means of a commercial PET/CT scanner and compared to a MC simulated activity expectation, derived under the assumption of a correct treatment delivery. At HIT, the MC particle transport and interaction code FLUKA is used for the simulation of the expected positron-emitter yield. For this particular application, the code is coupled to externally provided cross-section data of several proton-induced reactions. Studying experimentally the positron-emitting radionuclide yield in homogeneous phantoms provides access to the fundamental production channels. Therefore, five different materials have been irradiated by monoenergetic proton pencil beams at various energies and the induced β+ activity subsequently acquired with a commercial full-ring PET/CT scanner. With the analysis of dynamically reconstructed PET images, we are able to determine separately the spatial distribution of different radionuclide concentrations at the starting time of the PET scan. The laterally integrated radionuclide yields in depth are used to tune the input cross-section data such that the impact of both the physical production and the imaging process on the various positron-emitter yields is reproduced. The resulting cross-section data sets allow to model the absolute level of measured β+ activity induced in the investigated targets within a few per cent. Moreover, the simulated distal activity fall-off positions, representing the central quantity for treatment monitoring in terms of beam range verification, are found to agree within 0.6 mm with the measurements at different initial beam energies in both homogeneous and heterogeneous targets. Based on work presented at the Third European Workshop on Monte Carlo Treatment Planning (Seville, 15-18 May 2012).

Textile/metal-organic-framework composites as self-detoxifying filters for chemical-warfare agents.

PubMed

López-Maya, Elena; Montoro, Carmen; Rodríguez-Albelo, L Marleny; Aznar Cervantes, Salvador D; Lozano-Pérez, A Abel; Cenís, José Luis; Barea, Elisa; Navarro, Jorge A R

2015-06-01

The current technology of air-filtration materials for protection against highly toxic chemicals, that is, chemical-warfare agents, is mainly based on the broad and effective adsorptive properties of hydrophobic activated carbons. However, adsorption does not prevent these materials from behaving as secondary emitters once they are contaminated. Thus, the development of efficient self-cleaning filters is of high interest. Herein, we report how we can take advantage of the improved phosphotriesterase catalytic activity of lithium alkoxide doped zirconium(IV) metal-organic framework (MOF) materials to develop advanced self-detoxifying adsorbents of chemical-warfare agents containing hydrolysable P-F, P-O, and C-Cl bonds. Moreover, we also show that it is possible to integrate these materials onto textiles, thereby combining air-permeation properties of the textiles with the self-detoxifying properties of the MOF material. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical nanoscopy with contact Mie-particles: Resolution analysis

NASA Astrophysics Data System (ADS)

Maslov, Alexey V.; Astratov, Vasily N.

2017-06-01

The theoretical limits of resolution available in microspherical nanoscopy are explored using incoherent point emitters in the air. The images are calculated using a two-dimensional model and solving the Maxwell equations which account for the wave effects on the sub-wavelength scale of the emitter-microsphere interaction. Based on our results, we propose to use small dielectric particles with diameters λ ≲ D ≲ 2 λ made of a high-refractive-index material n ˜2 for imaging sub-wavelength objects. It is shown that such particles form virtual images below and real images above them. At wavelengths of the Mie resonances, these images have slightly better than ˜λ/4 resolution that can be attributed to the image magnification in close proximity to the object and contributions of its near field. The resonant super-resolution imaging of various point-like objects, such as dye molecules, fluorophores, or nanoplasmonic particles, can be realized by using narrow bandpass optical filters spectrally aligned with the Mie resonances.

Final cooling for a high-energy high-luminosity lepton collider

NASA Astrophysics Data System (ADS)

Neuffer, D.; Sayed, H.; Acosta, J.; Hart, T.; Summers, D.

2017-07-01

A high-energy muon collider requires a "final cooling" system that reduces transverse emittance by a factor of ~ 10, while allowing the longitudinal emittance to increase. The baseline approach has low-energy transverse cooling within high-field solenoids, with strong longitudinal heating. This approach and its recent simulation are discussed. Alternative approaches, which more explicitly include emittance exchange are also presented. Round-to-flat beam transform, transverse slicing, and longitudinal bunch coalescence are possible components of an alternative approach. Wedge-based emittance exchange could provide much of the required transverse cooling with longitudinal heating. Li-lens and quadrupole focusing systems could also provide much of the required final cooling.

Plasmonic thermal IR emitters based on nanoamorphous carbon

NASA Astrophysics Data System (ADS)

Tay, Savaş; Kropachev, Aleksandr; Araci, Ismail Emre; Skotheim, Terje; Norwood, Robert A.; Peyghambarian, N.

2009-02-01

The development of plasmonic narrow-band thermal mid-IR emitters made from a conducting amorphous carbon composite is shown. These IR emitters have greatly improved thermal and mechanical stability compared to metallic emitters as they can be operated at 600 °C in air without any degradation in performance. The emitted thermal radiation has a bandwidth of 0.5 μm and can be set to the desired wavelength from 3 to 15 μm by changing the surface periodicity. The periodically patterned devices have in-band emissivities significantly exceeding that of the non-patterned devices, constituting simple yet efficient radiation sources at this important wavelength range.

Field emitter displays for future avionics applications

NASA Astrophysics Data System (ADS)

Jones, Susan K.; Jones, Gary W.; Zimmerman, Steven M.; Blazejewski, Edward R.

1995-06-01

Field emitter array-based display technology offers CRT-like characteristics in a thin flat-panel display with many potential applications for vehicle-mounted, crew workstation, and helmet-mounted displays, as well as many other military and commercial applications. In addition to thinness, high brightness, wide viewing angle, wide temperature range, and low weight, field emitter array displays also offer potential advantages such as row-at-a-time matrix addressability and the ability to be segmented.

Diamondoid monolayers as electron emitters

DOEpatents

Yang, Wanli [El Cerrito, CA; Fabbri, Jason D [San Francisco, CA; Melosh, Nicholas A [Menlo Park, CA; Hussain, Zahid [Orinda, CA; Shen, Zhi-Xun [Stanford, CA

2012-04-10

Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

Diamondoid monolayers as electron emitters

DOEpatents

Yang, Wanli; Fabbri, Jason D.; Melosh, Nicholas A.; Hussain, Zahid; Shen, Zhi-Xun

2013-10-29

Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

Diamond field emitter array cathodes and possibilities of employing additive manufacturing for dielectric laser accelerating structures

NASA Astrophysics Data System (ADS)

Simakov, Evgenya I.; Andrews, Heather L.; Herman, Matthew J.; Hubbard, Kevin M.; Weis, Eric

2017-03-01

Demonstration of a stand-alone practical dielectric laser accelerator (DLA) requires innovation in two major critical components: high-current ultra-low-emittance cathodes and efficient laser accelerator structures. LANL develops two technologies that in our opinion are applicable to the novel DLA architectures: diamond field emitter array (DFEA) cathodes and additive manufacturing of photonic band-gap (PBG) structures. This paper discusses the results of testing of DFEA cathodes in the field-emission regime and the possibilities for their operation in the photoemission regime, and compares their emission characteristics to the specific needs of DLAs. We also describe recent advances in additive manufacturing of dielectric woodpile structures using a Nanoscribe direct laser-writing device capable of maskless lithography and additive manufacturing, and the development of novel infrared dielectric materials compatible with additive manufacturing.

Space-charge-limited solid-state triode

NASA Technical Reports Server (NTRS)

Shumka, A. (Inventor)

1975-01-01

A solid-state triode is provided from a wafer of nearinstrinsic semiconductor material sliced into filaments of rectangular cross section. Before slicing, emitter and collector regions are formed on the narrow sides of the filaments, and after slicing gate regions are formed in arrow strips extending longitudinally along the midsections of the wide sides of the filaments. Contacts are then formed on the emitter, collector and gate regions of each filament individually for a single filament device, or in parallel for an array of filament devices to increase load current.

A system for measuring bubble voidage and frequency around tubes immersed in a fluidized bed of particles

NASA Astrophysics Data System (ADS)

Whitty, Kevin J.; Siddoway, Michael

2010-07-01

Gas-solid fluidized beds are common in chemical processing and energy production industries. These types of reactors frequently have banks of tubes immersed within the bed to provide heating or cooling, and it is important that the fluid dynamics within these bundles is efficient and uniform. This paper presents a simple, low-cost method for quantitatively analyzing the behavior of gas bubbles within banks of tubes in a fluidized bed cold flow model. Two probes, one containing an infrared emitter and one containing an infrared (IR) detector, are placed into adjacent glass tubes such that the emitter and detector face each other. As bubbles pass through the IR beam, the detector signal increases due to less solid material blocking the path between the emitter and detector. By calibrating the signal response to known voidage of the material, one can measure the bubble voidage at various locations within the tube bundle. The rate and size of bubbles passing through the beam can also be determined by high frequency data collection and subsequent analysis. This technique allows one to develop a map of bubble voidage within a fluidized bed, which can be useful for model validation and system optimization.

A system for measuring bubble voidage and frequency around tubes immersed in a fluidized bed of particles.

PubMed

Whitty, Kevin J; Siddoway, Michael

2010-07-01

Gas-solid fluidized beds are common in chemical processing and energy production industries. These types of reactors frequently have banks of tubes immersed within the bed to provide heating or cooling, and it is important that the fluid dynamics within these bundles is efficient and uniform. This paper presents a simple, low-cost method for quantitatively analyzing the behavior of gas bubbles within banks of tubes in a fluidized bed cold flow model. Two probes, one containing an infrared emitter and one containing an infrared (IR) detector, are placed into adjacent glass tubes such that the emitter and detector face each other. As bubbles pass through the IR beam, the detector signal increases due to less solid material blocking the path between the emitter and detector. By calibrating the signal response to known voidage of the material, one can measure the bubble voidage at various locations within the tube bundle. The rate and size of bubbles passing through the beam can also be determined by high frequency data collection and subsequent analysis. This technique allows one to develop a map of bubble voidage within a fluidized bed, which can be useful for model validation and system optimization.

Hugo Destaillats Home page. Presentation.

Science.gov Websites

simulate effects of natural exposure on solar reflectance and thermal emittance of cool roofing materials practice for laboratory soiling and weathering of roofing materials to simulate effects of natural exposure Catalysis B: Environmental, 2012, 128, 159-170. Download it here . “Quantitative room-temperature

Tuning the spectral emittance of α-SiC open-cell foams up to 1300 K with their macro porosity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rousseau, B., E-mail: benoit.rousseau@univ-nantes.fr; Guevelou, S.; Mekeze-Monthe, A.

2016-06-15

A simple and robust analytical model is used to finely predict the spectral emittance under air up to 1300 K of α-SiC open-cell foams constituted of optically thick struts. The model integrates both the chemical composition and the macro-porosity and is valid only if foams have volumes higher than their Representative Elementary Volumes required for determining their emittance. Infrared emission spectroscopy carried out on a doped silicon carbide single crystal associated to homemade numerical tools based on 3D meshed images (Monte Carlo Ray Tracing code, foam generator) make possible to understand the exact role of the cell network in emittance.more » Finally, one can tune the spectral emittance of α-SiC foams up to 1300 K by simply changing their porosity.« less

Non-blinking single-photon emitters in silica

DOE PAGES

Rabouw, Freddy T.; Cogan, Nicole M. B.; Berends, Anne C.; ...

2016-02-19

Samples for single-emitter spectroscopy are usually prepared by spin-coating a dilute solution of emitters on a microscope cover slip of silicate based glass (such as quartz). Here, we show that both borosilicate glass and quartz contain intrinsic defect colour centres that fluoresce when excited at 532 nm. In a microscope image the defect emission is indistinguishable from spin-coated emitters. The emission spectrum is characterised by multiple peaks with the main peak between 2.05 and 2.20 eV, most likely due to coupling to a silica vibration with an energy that varies between 160 and 180 meV. The defects are single-photon emitters,more » do not blink, and have photoluminescence lifetimes of a few nanoseconds. Furthermore, photoluminescence from such defects may previously have been misinterpreted as originating from single nanocrystal quantum dots.« less

Development of a pepper-pot device to determine the emittance of an ion beam generated by electron cyclotron resonance ion sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strohmeier, M.; University of Applied Sciences Karlsruhe, Moltkestr. 30, 76133 Karlsruhe; Benitez, J. Y.

2010-02-15

This paper describes the recent development and commissioning of a pepper-pot emittance meter at the Lawrence Berkeley National Laboratory (LBNL). It is based on a potassium bromide (KBr) scintillator screen in combination with a charged coupled device camera. Pepper-pot scanners record the full four-dimensional transverse phase space emittances which are particularly interesting for electron cyclotron resonance ion sources. The strengths and limitations of evaluating emittances using optical pepper-pot scanners are described and systematic errors induced by the optical data acquisition system will be presented. Light yield tests of KBr exposed to different ion species and first emittance measurement data usingmore » ion beams extracted from the 6.4 GHz LBNL electron cyclotron resonance ion source are presented and discussed.« less

Development of GaInP Solar Cells Grown by Hydride Vapor Phase Epitaxy

DOE PAGES

Schulte, Kevin L.; Simon, John; Mangum, John; ...

2017-04-30

We demonstrate the growth of homojunction GaInP solar cells by dynamic hydride vapor phase epitaxy for the first time. Simple unpassivated n-on-p structures grown in an inverted configuration with gold back reflectors were analyzed. Short wavelength performance varied strongly with emitter thickness, since collection in the emitter was limited by the lack of surface passivation. Collection in the base increased strongly with decreasing doping density, in the range 1 x 10 16 - 5 x 10 17 cm -3. Optical modeling indicated that, in our best device, doped ~1 x 10 16 cm -3, almost 94% of photons that passedmore » through the emitter were collected. Modeling also indicated that the majority of collection occurs in the depletion region with this design, suggesting that nonradiative recombination there might limit device performance. In agreement with this observation, the experimental dark J-V curve exhibited an ideality factor near n = 2. Thus, limitation of deep level carrier traps in the material is a path to improved performance. Preliminary experiments indicate that a reduced V/III ratio, which potentially affects the density of these presumed traps, improves cell performance. With reduced V/III ratio, we demonstrate a ~13% efficient GaInP cell measured under the 1-sun AM1.5G spectrum. In conclusion, this cell had an antireflective coating, but no front surface passivation.« less

A system for online beam emittance measurements and proton beam characterization

NASA Astrophysics Data System (ADS)

Nesteruk, K. P.; Auger, M.; Braccini, S.; Carzaniga, T. S.; Ereditato, A.; Scampoli, P.

2018-01-01

A system for online measurement of the transverse beam emittance was developed. It is named 4PrOBεaM (4-Profiler Online Beam Emittance Measurement) and was conceived to measure the emittance in a fast and efficient way using the multiple beam profiler method. The core of the system is constituted by four consecutive UniBEaM profilers, which are based on silica fibers passing across the beam. The 4PrOBεaM system was deployed for characterization studies of the 18 MeV proton beam produced by the IBA Cyclone 18 MeV cyclotron at Bern University Hospital (Inselspital). The machine serves daily radioisotope production and multi-disciplinary research, which is carried out with a specifically conceived Beam Transport Line (BTL). The transverse RMS beam emittance of the cyclotron was measured as a function of several machine parameters, such as the magnetic field, RF peak voltage, and azimuthal angle of the stripper. The beam emittance was also measured using the method based on the quadrupole strength variation. The results obtained with both techniques were compared and a good agreement was found. In order to characterize the longitudinal dynamics, the proton energy distribution was measured. For this purpose, a method was developed based on aluminum absorbers of different thicknesses, a UniBEaM detector, and a Faraday cup. The results were an input for a simulation of the BTL developed in the MAD-X software. This tool allows machine parameters to be tuned online and the beam characteristics to be optimized for specific applications.

Work function determination of promising electrode materials for thermionic converters

NASA Technical Reports Server (NTRS)

Jacobson, D.

1977-01-01

Work performed on this contract was primarily for the evaluation of selected electrode materials for thermionic energy converters. The original objective was to characterize selected nickel based superalloys up to temperatures of 1400 K. It was found that an early selection, Inconel 800 produced a high vapor pressure which interfered with the vacuum emission measurements. The program then shifted to two other areas. The first area was to obtain emission from the superalloys in a cesiated atmosphere. The cesium plasma helps to suppress the vaporization interference. The second area involved characterization of the Lanthanum-Boron series as thermionic emitters. These final two areas resulted in three journal publications which are attached to this report.

Electronic transition imaging of carbon based materials: The photothreshold of melanin and thermionic field emission from diamond

NASA Astrophysics Data System (ADS)

Garguilo, Jacob

This study explores electronic transitions in carbon based materials through the use of a custom built, non rastering electron emission microscope. The specifics and history of electron emission are described as well as the equipment used in this study. The materials examined fall into two groups, melanosome films isolated from the human body and polycrystalline diamond tip arrays. A novel technique for determining the photothreshold of a heterogeneous material on a microscopic or smaller scale is developed and applied to melanosome films isolated from the hair, eyes, and brain of human donors. The conversion of the measured photothreshold on the vacuum scale to an electrochemical oxidation potential is discussed and the obtained data is considered based on this conversion. Pheomelanosomes isolated from human hair are shown to have significantly lower photoionization energy than eumelanosomes, indicating their likelihood as sources of oxidative stress. The ionization energies of the hair melanosomes are checked with complimentary procedures. Ocular melanosomes from the retinal pigment epithelium are measured as a function of patient age and melanosome shape. Lipofuscin, also found in the eye, is examined with the same microscopy technique and shown to have a significantly lower ionization threshold than RPE melanosomes. Neuromelanin from the substantia nigra is also examined and shown to have an ionization threshold close to that of eumelanin. A neuromelanin formation model is proposed based on these results. Polycrystalline diamond tip arrays are examined for their use as thermionic energy converter emitters. Thermionic energy conversion is accomplished through the combination of a hot electron emitter in conjunction with a somewhat cooler electron collector. The generated electron current can be used to do work in an external load. It is shown that the tipped structures of these samples result in enhanced emission over the surrounding flat areas, which may prove valuable in limiting the negative space charge effect in vacuum energy converting devices. Additionally, the effects of exceeding a threshold temperature for the films are shown, establishing a maximum operating regime for any device which incorporates hydrogen terminated diamond.

Toward 3D Printing of Medical Implants: Reduced Lateral Droplet Spreading of Silicone Rubber under Intense IR Curing.

PubMed

Stieghorst, Jan; Majaura, Daniel; Wevering, Hendrik; Doll, Theodor

2016-03-01

The direct fabrication of silicone-rubber-based individually shaped active neural implants requires high-speed-curing systems in order to prevent extensive spreading of the viscous silicone rubber materials during vulcanization. Therefore, an infrared-laser-based test setup was developed to cure the silicone rubber materials rapidly and to evaluate the resulting spreading in relation to its initial viscosity, the absorbed infrared radiation, and the surface tensions of the fabrication bed's material. Different low-adhesion materials (polyimide, Parylene-C, polytetrafluoroethylene, and fluorinated ethylenepropylene) were used as bed materials to reduce the spreading of the silicone rubber materials by means of their well-known weak surface tensions. Further, O2-plasma treatment was performed on the bed materials to reduce the surface tensions. To calculate the absorbed radiation, the emittance of the laser was measured, and the absorptances of the materials were investigated with Fourier transform infrared spectroscopy in attenuated total reflection mode. A minimum silicone rubber spreading of 3.24% was achieved after 2 s curing time, indicating the potential usability of the presented high-speed-curing process for the direct fabrication of thermal-curing silicone rubbers.

Undulator-Based Laser Wakefield Accelerator Electron Beam Energy Spread and Emittance Diagnostic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakeman, M. S.; University of Nevada Reno, Reno, NV 89557; Van Tilborg, J.

The design and current status of experiments to couple the Tapered Hybrid Undulator (THUNDER) to the Lawrence Berkeley National Laboratory (LBNL) laser plasma accelerator (LPA) to measure electron beam energy spread and emittance are presented.

Improved Photoresist Coating for Making CNT Field Emitters

NASA Technical Reports Server (NTRS)

Toda, Risaku; Manohara, Harish

2009-01-01

An improved photoresist-coating technique has been developed for use in the fabrication of carbon-nanotube- (CNT) based field emitters is described. The improved photoresist coating technique overcomes what, heretofore, has been a major difficulty in the fabrication process.

Recent Progress in Silicon-Based MEMS Field Emission Thrusters

NASA Astrophysics Data System (ADS)

Lenard, Roger X.; Kravitz, Stanley H.; Tajmar, Martin

2005-02-01

The Indium Field Emission Thruster (In-FET) is a highly characterized and space-proven device based on space-qualified liquid metal ion sources. There is also extensive experience with liquid metal ion sources for high-brightness semiconductor fabrications and inspection Like gridded ion engines, In-FETs efficiently accelerate ions through a series of high voltage electrodes. Instead of a plasma discharge to generate ions, which generates a mixture of singly and doubly charged ions as well as neutrals, indium metal is melted (157°C) and fed to the tip of a capillary tube where very high local electric fields perform more-efficient field emission ionization, providing nearly 100% singly charged species. In-FETs do not have the associated losses or lifetime concerns of a magnetically confined discharge and hollow cathode in ion thrusters. For In-FETs, propellant efficiencies ˜100% stipulate single-emitter currents ⩽10μA, perhaps as low as 5μA of current. This low emitter current results in ⩽0.5 W/emitter. Consequently, if the In-FET is to be used for future Human and Robotic missions under President Bush's Exploration plan, a mechanism to generate very high power levels is necessary. Efficient high-power operation requires many emitter/extractor pairs. Conventional fabrication techniques allow 1-10 emitters in a single module, with pain-staking precision required. Properly designed and fabricated In-FETs possess electric-to-jet efficiency >90% and a specific mass <0.25 kg/kWe. MEMS techniques allow reliable batch processing with ˜160,000 emitters in a 10×10-cm array. Developing a 1.5kW 10×10-cm module is a necessary stepping-stone for >500 kWe systems where groups of 9 or 16 modules, with a single PPU/feed system, form the building blocks for even higher-power exploration systems. In 2003, SNL and ARCS produced a MEMS-based In-FET 5×5 emitter module with individually addressable emitter/extractor pairs on a 15×15mm wafer. The first MEMS thruster prototype has already been tested to demonstrate the proof-of-concept in laboratory-scale testing. In this paper we discuss progress that has been achieved in the past year on fabricating silicon-based MEMS In-FETs.

Instantaneous electron beam emittance measurement system based on the optical transition radiation principle

NASA Astrophysics Data System (ADS)

Jiang, Xiao-Guo; Wang, Yuan; Zhang, Kai-Zhi; Yang, Guo-Jun; Shi, Jin-Shui; Deng, Jian-Jun; Li, Jin

2014-01-01

One kind of instantaneous electron beam emittance measurement system based on the optical transition radiation principle and double imaging optical method has been set up. It is mainly adopted in the test for the intense electron-beam produced by a linear induction accelerator. The system features two characteristics. The first one concerns the system synchronization signal triggered by the following edge of the main output waveform from a Blumlein switch. The synchronous precision of about 1 ns between the electron beam and the image capture time can be reached in this way so that the electron beam emittance at the desired time point can be obtained. The other advantage of the system is the ability to obtain the beam spot and beam divergence in one measurement so that the calculated result is the true beam emittance at that time, which can explain the electron beam condition. It provides to be a powerful beam diagnostic method for a 2.5 kA, 18.5 MeV, 90 ns (FWHM) electron beam pulse produced by Dragon I. The ability of the instantaneous measurement is about 3 ns and it can measure the beam emittance at any time point during one beam pulse. A series of beam emittances have been obtained for Dragon I. The typical beam spot is 9.0 mm (FWHM) in diameter and the corresponding beam divergence is about 10.5 mrad.

Additively manufactured MEMS multiplexed coaxial electrospray sources for high-throughput, uniform generation of core-shell microparticles.

PubMed

Olvera-Trejo, D; Velásquez-García, L F

2016-10-18

This study reports the first MEMS multiplexed coaxial electrospray sources in the literature. Coaxial electrospraying is a microencapsulation technology based on electrohydrodynamic jetting of two immiscible liquids, which allows precise control with low size variation of the geometry of the core-shell particles it generates, which is of great importance in numerous biomedical and engineering applications, e.g., drug delivery and self-healing composites. By implementing monolithic planar arrays of miniaturized coaxial electrospray emitters that work uniformly in parallel, the throughput of the compound microdroplet source is greatly increased, making the microencapsulation technology compatible with low-cost commercial applications. Miniaturized core-shell particle generators with up to 25 coaxial electrospray emitters (25 emitters cm -2 ) were fabricated via stereolithography, which is an additive manufacturing process that can create complex microfluidic devices at a small fraction of the cost per device and fabrication time associated with silicon-based counterparts. The characterization of devices with the same emitter structure but different array sizes demonstrates uniform array operation. Moreover, the data demonstrate that the per-emitter current is approximately proportional to the square root of the flow rate of the driving liquid, and it is independent of the flow rate of the driven liquid, as predicted by the theory. The core/shell diameters and the size distribution of the generated compound microparticles can be modulated by controlling the flow rates fed to the emitters.

Photon scattering from a system of multilevel quantum emitters. II. Application to emitters coupled to a one-dimensional waveguide

NASA Astrophysics Data System (ADS)

Das, Sumanta; Elfving, Vincent E.; Reiter, Florentin; Sørensen, Anders S.

2018-04-01

In a preceding paper we introduced a formalism to study the scattering of low-intensity fields from a system of multilevel emitters embedded in a three-dimensional (3 D ) dielectric medium. Here we show how this photon-scattering relation can be used to analyze the scattering of single photons and weak coherent states from any generic multilevel quantum emitter coupled to a one-dimensional (1 D ) waveguide. The reduction of the photon-scattering relation to 1 D waveguides provides a direct solution of the scattering problem involving low-intensity fields in the waveguide QED regime. To show how our formalism works, we consider examples of multilevel emitters and evaluate the transmitted and reflected field amplitude. Furthermore, we extend our study to include the dynamical response of the emitters for scattering of a weak coherent photon pulse. As our photon-scattering relation is based on the Heisenberg picture, it is quite useful for problems involving photodetection in the waveguide architecture. We show this by considering a specific problem of state generation by photodetection in a multilevel emitter, where our formalism exhibits its full potential. Since the considered emitters are generic, the 1 D results apply to a plethora of physical systems such as atoms, ions, quantum dots, superconducting qubits, and nitrogen-vacancy centers coupled to a 1 D waveguide or transmission line.

Increase of intrinsic emittance induced by multiphoton photoemission from copper cathodes illuminated by femtosecond laser pulses

NASA Astrophysics Data System (ADS)

An, Chenjie; Zhu, Rui; Xu, Jun; Liu, Yaqi; Hu, Xiaopeng; Zhang, Jiasen; Yu, Dapeng

2018-05-01

Electron sources driven by femtosecond laser have important applications in many aspects, and the research about the intrinsic emittance is becoming more and more crucial. The intrinsic emittance of polycrystalline copper cathode, which was illuminated by femtosecond pulses (FWHM of the pulse duration was about 100 fs) with photon energies above and below the work function, was measured with an extremely low bunch charge (single-electron pulses) based on free expansion method. A minimum emittance was obtained at the photon energy very close to the effective work function of the cathode. When the photon energy decreased below the effective work function, emittance increased rather than decreased or flattened out to a constant. By investigating the dependence of photocurrent density on the incident laser intensity, we found the emission excited by pulsed photons with sub-work-function energies contained two-photon photoemission. In addition, the portion of two-photon photoemission current increased with the reduction of photon energy. We attributed the increase of emittance to the effect of two-photon photoemission. This work shows that conventional method of reducing the photon energy of excited light source to approach the room temperature limit of the intrinsic emittance may be infeasible for femtosecond laser. There would be an optimized photon energy value near the work function to obtain the lowest emittance for pulsed laser pumped photocathode.

Phosphorescent cyclometalated complexes for efficient blue organic light-emitting diodes

PubMed Central

Suzuri, Yoshiyuki; Oshiyama, Tomohiro; Ito, Hiroto; Hiyama, Kunihisa; Kita, Hiroshi

2014-01-01

Phosphorescent emitters are extremely important for efficient organic light-emitting diodes (OLEDs), which attract significant attention. Phosphorescent emitters, which have a high phosphorescence quantum yield at room temperature, typically contain a heavy metal such as iridium and have been reported to emit blue, green and red light. In particular, the blue cyclometalated complexes with high efficiency and high stability are being developed. In this review, we focus on blue cyclometalated complexes. Recent progress of computational analysis necessary to design a cyclometalated complex is introduced. The prediction of the radiative transition is indispensable to get an emissive cyclometalated complex. We summarize four methods to control phosphorescence peak of the cyclometalated complex: (i) substituent effect on ligands, (ii) effects of ancillary ligands on heteroleptic complexes, (iii) design of the ligand skeleton, and (iv) selection of the central metal. It is considered that novel ligand skeletons would be important to achieve both a high efficiency and long lifetime in the blue OLEDs. Moreover, the combination of an emitter and a host is important as well as the emitter itself. According to the dependences on the combination of an emitter and a host, the control of exciton density of the triplet is necessary to achieve both a high efficiency and a long lifetime, because the annihilations of the triplet state cause exciton quenching and material deterioration. PMID:27877712

Phosphorescent cyclometalated complexes for efficient blue organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Suzuri, Yoshiyuki; Oshiyama, Tomohiro; Ito, Hiroto; Hiyama, Kunihisa; Kita, Hiroshi

2014-10-01

Phosphorescent emitters are extremely important for efficient organic light-emitting diodes (OLEDs), which attract significant attention. Phosphorescent emitters, which have a high phosphorescence quantum yield at room temperature, typically contain a heavy metal such as iridium and have been reported to emit blue, green and red light. In particular, the blue cyclometalated complexes with high efficiency and high stability are being developed. In this review, we focus on blue cyclometalated complexes. Recent progress of computational analysis necessary to design a cyclometalated complex is introduced. The prediction of the radiative transition is indispensable to get an emissive cyclometalated complex. We summarize four methods to control phosphorescence peak of the cyclometalated complex: (i) substituent effect on ligands, (ii) effects of ancillary ligands on heteroleptic complexes, (iii) design of the ligand skeleton, and (iv) selection of the central metal. It is considered that novel ligand skeletons would be important to achieve both a high efficiency and long lifetime in the blue OLEDs. Moreover, the combination of an emitter and a host is important as well as the emitter itself. According to the dependences on the combination of an emitter and a host, the control of exciton density of the triplet is necessary to achieve both a high efficiency and a long lifetime, because the annihilations of the triplet state cause exciton quenching and material deterioration.

Deterministic control of the emission from light sources in 1D nanoporous photonic crystals (Conference Presentation)

NASA Astrophysics Data System (ADS)

Galisteo-López, Juan F.

2017-02-01

Controlling the emission of a light source demands acting on its local photonic environment via the local density of states (LDOS). Approaches to exert such control on large scale samples, commonly relying on self-assembly methods, usually lack from a precise positioning of the emitter within the material. Alternatively expensive and time consuming techniques can be used to produce samples of small dimensions where a deterministic control on emitter position can be achieved. In this work we present a full solution process approach to fabricate photonic architectures containing nano-emitters which position can be controlled with nanometer precision over squared milimiter regions. By a combination of spin and dip coating we fabricate one-dimensional (1D) nanoporous photonic crystals, which potential in different fields such as photovoltaics or sensing has been previously reported, containing monolayers of luminescent polymeric nanospheres. We demonstrate how, by modifying the position of the emitters within the photonic crystal, their emission properties (photoluminescence intensity and angular distribution) can be deterministically modified. Further, the nano-emitters can be used as a probe to study the LDOS distribution within these systems with a spatial resolution of 25 nm (provided by the probe size) carrying out macroscopic measurements over squared milimiter regions. Routes to enhance light-matter interaction in this kind of systems by combining them with metallic surfaces are finally discussed.

Rec.2100 color gamut revelation using spectrally ultranarrow emitters

NASA Astrophysics Data System (ADS)

Genc, Sinan; Uguz, Mustafa; Yilmaz, Osman; Mutlugun, Evren

2017-11-01

We theoretically simulate the performance of ultranarrow emitters for the first time to achieve record high coverage for the International Telecommunication Union Radiocommunication Sector BT.2100 (Rec.2100) and National Television System Committee (NTSC) color gamut. Our results, employing more than 130-m parameter sets, include the investigation into peak emission wavelength and full width at half maximum (FWHM) values for three primaries that show ultranarrow emitters, i.e., nanoplatelets are potentially promising materials to fully cover the Rec.2100 color gamut. Using ultranarrow emitters having FWHM as low as 6 nm can provide the ability to attain 99.7% coverage area of the Rec.2100 color gamut as well as increasing the NTSC triangle to 133.7% with full coverage. The parameter set that provides possibility to fully reach Rec.2100 also has been shown to match with D65 white light by making use of the correct combination of those three primaries. Furthermore, we investigate the effect of the fourth color component on the CIE 1931 color space without sacrificing the achieved coverage percentages. The investigation into the fourth color component, cyan, is shown for the first time to enhance the Rec.2100 gamut area to 127.7% with 99.9% coverage. The fourth color component also provides an NTSC coverage ratio of 171.5%. The investigation into the potential of emitters with ultranarrow emission bandwidth holds great promise for future display applications.

Hybrid Radar Emitter Recognition Based on Rough k-Means Classifier and Relevance Vector Machine

PubMed Central

Yang, Zhutian; Wu, Zhilu; Yin, Zhendong; Quan, Taifan; Sun, Hongjian

2013-01-01

Due to the increasing complexity of electromagnetic signals, there exists a significant challenge for recognizing radar emitter signals. In this paper, a hybrid recognition approach is presented that classifies radar emitter signals by exploiting the different separability of samples. The proposed approach comprises two steps, namely the primary signal recognition and the advanced signal recognition. In the former step, a novel rough k-means classifier, which comprises three regions, i.e., certain area, rough area and uncertain area, is proposed to cluster the samples of radar emitter signals. In the latter step, the samples within the rough boundary are used to train the relevance vector machine (RVM). Then RVM is used to recognize the samples in the uncertain area; therefore, the classification accuracy is improved. Simulation results show that, for recognizing radar emitter signals, the proposed hybrid recognition approach is more accurate, and presents lower computational complexity than traditional approaches. PMID:23344380

Resonant tunneling device with two-dimensional quantum well emitter and base layers

DOEpatents

Simmons, J.A.; Sherwin, M.E.; Drummond, T.J.; Weckwerth, M.V.

1998-10-20

A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation. 43 figs.

Resonant tunneling device with two-dimensional quantum well emitter and base layers

DOEpatents

Simmons, Jerry A.; Sherwin, Marc E.; Drummond, Timothy J.; Weckwerth, Mark V.

1998-01-01

A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation.

A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations

NASA Astrophysics Data System (ADS)

Vojak, B. A.; Alley, G. D.

1983-08-01

Two-dimensional numerical simulations are used to compare etched geometry and overgrown Si permeable base transistors (PTBs), considering both the etched collector and etched emitter biasing conditions made possible by the asymmetry of the etched structure. In PTB devices, the two-dimensional nature of the depletion region near the Schottky contact base grating results in a smaller electron barrier and, therefore, a larger collector current in the etched than in the overgrown structure. The parasitic feedback effects which result at high base-to-emitter bias levels lead to a deviation from the square-law behavior found in the collector characteristics of the overgrown PBT. These structures also have lower device capacitances and smaller transconductances at high base-to-emitter voltages. As a result, overgrown and etched structures have comparable predicted maximum values of the small signal unity short-circuit current gain frequency and maximum oscillation frequency.

Microfluidic White Organic Light-Emitting Diode Based on Integrated Patterns of Greenish-Blue and Yellow Solvent-Free Liquid Emitters

NASA Astrophysics Data System (ADS)

Kobayashi, Naofumi; Kasahara, Takashi; Edura, Tomohiko; Oshima, Juro; Ishimatsu, Ryoichi; Tsuwaki, Miho; Imato, Toshihiko; Shoji, Shuichi; Mizuno, Jun

2015-10-01

We demonstrated a novel microfluidic white organic light-emitting diode (microfluidic WOLED) based on integrated sub-100-μm-wide microchannels. Single-μm-thick SU-8-based microchannels, which were sandwiched between indium tin oxide (ITO) anode and cathode pairs, were fabricated by photolithography and heterogeneous bonding technologies. 1-Pyrenebutyric acid 2-ethylhexyl ester (PLQ) was used as a solvent-free greenish-blue liquid emitter, while 2,8-di-tert-butyl-5,11-bis(4-tert-butylphenyl)-6,12-diphenyltetracene (TBRb)-doped PLQ was applied as a yellow liquid emitter. In order to form the liquid white light-emitting layer, the greenish-blue and yellow liquid emitters were alternately injected into the integrated microchannels. The fabricated electro-microfluidic device successfully exhibited white electroluminescence (EL) emission via simultaneous greenish-blue and yellow emissions under an applied voltage of 100 V. A white emission with Commission Internationale de l’Declairage (CIE) color coordinates of (0.40, 0.42) was also obtained; the emission corresponds to warm-white light. The proposed device has potential applications in subpixels of liquid-based microdisplays and for lighting.

Improving Defect-Based Quantum Emitters in Silicon Carbide via Inorganic Passivation.

PubMed

Polking, Mark J; Dibos, Alan M; de Leon, Nathalie P; Park, Hongkun

2018-01-01

Defect-based color centers in wide-bandgap crystalline solids are actively being explored for quantum information science, sensing, and imaging. Unfortunately, the luminescent properties of these emitters are frequently degraded by blinking and photobleaching that arise from poorly passivated host crystal surfaces. Here, a new method for stabilizing the photoluminescence and charge state of color centers based on epitaxial growth of an inorganic passivation layer is presented. Specifically, carbon antisite-vacancy pairs (CAV centers) in 4H-SiC, which serve as single-photon emitters at visible wavelengths, are used as a model system to demonstrate the power of this inorganic passivation scheme. Analysis of CAV centers with scanning confocal microscopy indicates a dramatic improvement in photostability and an enhancement in emission after growth of an epitaxial AlN passivation layer. Permanent, spatially selective control of the defect charge state can also be achieved by exploiting the mismatch in spontaneous polarization at the AlN/SiC interface. These results demonstrate that epitaxial inorganic passivation of defect-based quantum emitters provides a new method for enhancing photostability, emission, and charge state stability of these color centers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solid state transport-based thermoelectric converter

DOEpatents

Hu, Zhiyu

2010-04-13

A solid state thermoelectric converter includes a thermally insulating separator layer, a semiconducting collector and an electron emitter. The electron emitter comprises a metal nanoparticle layer or plurality of metal nanocatalyst particles disposed on one side of said separator layer. A first electrically conductive lead is electrically coupled to the electron emitter. The collector layer is disposed on the other side of the separator layer, wherein the thickness of the separator layer is less than 1 .mu.m. A second conductive lead is electrically coupled to the collector layer.

Organic nanostructures of thermally activated delayed fluorescent emitters with enhanced intersystem crossing as novel metal-free photosensitizers.

PubMed

Zhang, Jinfeng; Chen, Wencheng; Chen, Rui; Liu, Xiao-Ke; Xiong, Yuan; Kershaw, Stephen V; Rogach, Andrey L; Adachi, Chihaya; Zhang, Xiaohong; Lee, Chun-Sing

2016-09-27

We applied organic nanostructures based on thermally activated delayed fluorescent (TADF) emitters for singlet oxygen generation. Due to the extremely small energy gaps between the excited singlet states (S 1 ) and triplet states (T 1 ) of these heavy-metal-free organic nanostructures, intersystem conversion between S 1 and T 1 can occur easily. This strategy also works well for exciplex-type TADF emitters prepared by mixing suitable donors and acceptors which have no TADF characteristics themselves.

Significant performance enhancement in photoconductive terahertz optoelectronics by incorporating plasmonic contact electrodes.

PubMed

Berry, C W; Wang, N; Hashemi, M R; Unlu, M; Jarrahi, M

2013-01-01

Even though the terahertz spectrum is well suited for chemical identification, material characterization, biological sensing and medical imaging, practical development of these applications has been hindered by attributes of existing terahertz optoelectronics. Here we demonstrate that the use of plasmonic contact electrodes can significantly mitigate the low-quantum efficiency performance of photoconductive terahertz optoelectronics. The use of plasmonic contact electrodes offers nanoscale carrier transport path lengths for the majority of photocarriers, increasing the number of collected photocarriers in a subpicosecond timescale and, thus, enhancing the optical-to-terahertz conversion efficiency of photoconductive terahertz emitters and the detection sensitivity of photoconductive terahertz detectors. We experimentally demonstrate 50 times higher terahertz radiation powers from a plasmonic photoconductive emitter in comparison with a similar photoconductive emitter with non-plasmonic contact electrodes, as well as 30 times higher terahertz detection sensitivities from a plasmonic photoconductive detector in comparison with a similar photoconductive detector with non-plasmonic contact electrodes.

Adjustable high emittance gap filler. [reentry shielding for space shuttle vehicles

NASA Technical Reports Server (NTRS)

Leiser, D. B.; Stewart, D. A.; Smith, M.; Estrella, C. A.; Goldstein, H. E. (Inventor)

1981-01-01

A flexible, adjustable refractory filler is disclosed for filling gaps between ceramic tiles forming the heat shield of a space shuttle vehicle, to protect its aluminum skin during atmospheric reentry. The easily installed and replaced filler consists essentially of a strip of ceramic cloth coated, at least along both its longitudinal edges with a room temperature vulcanizable silicone rubber compound with a high emittance colored pigment. The filler may have one or more layers as the gap width requires. Preferred materials are basket weave aluminoborosilicate cloth, and a rubber compounded with silicon tetraboride as the emittance agent and finely divided borosilicate glass containing about 7.5% B2O3 as high temperature binder. The filler cloth strip or tape is cut to proper width and length, inserted into the gap, and fastened with previously applied drops of silicone rubber adhesive.

Donor-σ-Acceptor Motifs: Thermally Activated Delayed Fluorescence Emitters with Dual Upconversion.

PubMed

Geng, Yan; D'Aleo, Anthony; Inada, Ko; Cui, Lin-Song; Kim, Jong Uk; Nakanotani, Hajime; Adachi, Chihaya

2017-12-22

A family of organic emitters with a donor-σ-acceptor (D-σ-A) motif is presented. Owing to the weakly coupled D-σ-A intramolecular charge-transfer state, a transition from the localized excited triplet state ( 3 LE) and charge-transfer triplet state ( 3 CT) to the charge-transfer singlet state ( 1 CT) occurred with a small activation energy and high photoluminescence quantum efficiency. Two thermally activated delayed fluorescence (TADF) components were identified, one of which has a very short lifetime of 200-400 ns and the other a longer TADF lifetime of the order of microseconds. In particular, the two D-σ-A materials presented strong blue emission with TADF properties in toluene. These results will shed light on the molecular design of new TADF emitters with short delayed lifetimes. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

MIRAGE: developments in IRSP systems, RIIC design, emitter fabrication, and performance

NASA Astrophysics Data System (ADS)

Bryant, Paul; Oleson, Jim; James, Jay; McHugh, Steve; Lannon, John; Vellenga, David; Goodwin, Scott; Huffman, Alan; Solomon, Steve; Goldsmith, George C., II

2005-05-01

SBIR's family of MIRAGE infrared scene projection systems is undergoing significant growth and expansion. The first two lots of production IR emitters have completed fabrication at Microelectronics Center of North Carolina/Research and Development Institute (MCNC-RDI), and the next round(s) of emitter production has begun. These latest emitter arrays support programs such as Large Format Resistive Array (LFRA), Optimized Array for Space-based Infrared Simulation (OASIS), MIRAGE 1.5, and MIRAGE II. We present the latest performance data on emitters fabricated at MCNC-RDI, plus integrated system performance on recently completed IRSP systems. Teamed with FLIR Systems/Indigo Operations, SBIR and the Tri-Services IRSP Working Group have completed development of the CMOS Read-In Integrated Circuit (RIIC) portion of the Wide Format Resistive Array (WFRA) program-to extend LFRA performance to a 768 x 1536 "wide screen" projection configuration. WFRA RIIC architecture and performance is presented. Finally, we summarize development of the LFRA Digital Emitter Engine (DEE) and OASIS cryogenic package assemblies, the next-generation Command & Control Electronics (C&CE).

Improvement of reusable surface insulation material

NASA Technical Reports Server (NTRS)

1972-01-01

The results are presented of a program to improve the reusable surface insulation (RSI) system through the improvement of the LI-1500 material properties and the simplification of the RSI system. The improvements made include: 2500 F-capability RSI systems, water-impervious surface coatings, establishment of a high-emittance coating constituent, development of a secondary water-reduction system, and achievement of a lower density (9 pcf) RSI material.

Generating a high brightness multi-kilowatt laser by dense spectral combination of VBG stabilized single emitter laser diodes

NASA Astrophysics Data System (ADS)

Fritsche, H.; Koch, Ralf; Krusche, B.; Ferrario, F.; Grohe, Andreas; Pflueger, S.; Gries, W.

2014-05-01

Generating high power laser radiation with diode lasers is commonly realized by geometrical stacking of diode bars, which results in high output power but poor beam parameter product (BPP). The accessible brightness in this approach is limited by the fill factor, both in slow and fast axis. By using a geometry that accesses the BPP of the individual diodes, generating a multi kilowatt diode laser with a BPP comparable to fiber lasers is possible. We will demonstrate such a modular approach for generating multi kilowatt lasers by combining single emitter diode lasers. Single emitter diodes have advantages over bars, mainly a simplified cooling, better reliability and a higher brightness per emitter. Additionally, because single emitters can be arranged in many different geometries, they allow building laser modules where the brightness of the single emitters is preserved. In order to maintain the high brightness of the single emitter we developed a modular laser design which uses single emitters in a staircase arrangement, then coupling two of those bases with polarization combination which is our basic module. Those modules generate up to 160 W with a BPP better than 7.5 mm*mrad. For further power scaling wavelength stabilization is crucial. The wavelength is stabilized with only one Volume Bragg Grating (VBG) in front of a base providing the very same feedback to all of the laser diodes. This results in a bandwidth of < 0.5 nm and a wavelength stability of better than 250 MHz over one hour. Dense spectral combination with dichroic mirrors and narrow channel spacing allows us to combine multiple wavelength channels, resulting in a 2 kW laser module with a BPP better than 7.5 mm*mrad, which can easily coupled into a 100 μm fiber and 0.15 NA.

Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics.

PubMed

Madéo, Julien; Margiolakis, Athanasios; Zhao, Zhen-Yu; Hale, Peter J; Man, Michael K L; Zhao, Quan-Zhong; Peng, Wei; Shi, Wang-Zhou; Dani, Keshav M

2015-07-15

We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.

Measurement of ion species in high current ECR H⁺/D⁺ ion source for IFMIF (International Fusion Materials Irradiation Facility).

PubMed

Shinto, K; Senée, F; Ayala, J-M; Bolzon, B; Chauvin, N; Gobin, R; Ichimiya, R; Ihara, A; Ikeda, Y; Kasugai, A; Kitano, T; Kondo, K; Marqueta, A; Okumura, Y; Takahashi, H; Valette, M

2016-02-01

Ion species ratio of high current positive hydrogen/deuterium ion beams extracted from an electron-cyclotron-resonance ion source for International Fusion Materials Irradiation Facility accelerator was measured by the Doppler shift Balmer-α line spectroscopy. The proton (H(+)) ratio at the middle of the low energy beam transport reached 80% at the hydrogen ion beam extraction of 100 keV/160 mA and the deuteron (D(+)) ratio reached 75% at the deuterium ion beam extraction of 100 keV/113 mA. It is found that the H(+) ratio measured by the spectroscopy gives lower than that derived from the phase-space diagram measured by an Allison scanner type emittance monitor. The H(+)/D(+) ratio estimated by the emittance monitor was more than 90% at those extraction currents.

High-luminosity blue and blue-green gallium nitride light-emitting diodes.

PubMed

Morkoç, H; Mohammad, S N

1995-01-06

Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.

Importing super-resolution imaging into nanoscale puzzles of materials dynamics

NASA Astrophysics Data System (ADS)

King, John; Tsang, Chi Hang Boyce; Wilson, William; Granick, Steve

2014-03-01

A limitation of the exciting recent advances in sub-diffraction microscopy is that they focus on imaging rather than dynamical changes. We are engaged in extending this technique beyond the usual biological applications to address materials problems instead. To this end, we employ stimulated emission depletion (STED) microscopy, which relies on selectively turning off fluorescence emitters through stimulated emission, allowing only a small subset of emitters to be detected, such that the excitation spot size can be downsized to tens of nanometers. By coupling the STED excitation scheme to fluorescence correlation spectroscopy (FCS), diffusive processes are studied with nanoscale resolution. Here, we demonstrate the benefits of such experimental capabilities in a diverse range of complex systems, ranging from the diffusion of nano-objects in crowded 3D environments to the study of polymer diffusion on 2D surfaces.

Effect of long-term exposure to Low Earth Orbit (LEO) space environment

NASA Technical Reports Server (NTRS)

Zimcik, D. G.

1987-01-01

Data obtained from components and materials from the Solar Maximum Mission satellite are presented and compared to data for similar materials obtained from the Advanced Composite Materials Exposure to Space Experiment (ACOMEX) flown on Shuttle mission STS-41G. In addition to evaluation of surface erosion and mass loss that may be of importance to very long-term missions, comparisons of solar absorptance and thermal emittance measurements for both long and short term exposures were made. Although the ratio of absorptance over emittance can be altered by proper choice of materials to ensure a proper operating environment for the spacecraft, once the thermal design is established, it is important that the material properties not change in order to maintain the operating environment for many payload and bus items such as electronics, batteries, fuel, etc. However, data presented show significant changes after short exposure in low Earth environment. Moreover, the measured changes are shown to differ according to the manner of exposure, i.e., normal or oblique, which also affects the resultant eroded surface morphology. These results identify constraints to be considered in development of flight experiments or laboratory testing.

Design rules for charge-transport efficient host materials for phosphorescent organic light-emitting diodes.

PubMed

May, Falk; Al-Helwi, Mustapha; Baumeier, Björn; Kowalsky, Wolfgang; Fuchs, Evelyn; Lennartz, Christian; Andrienko, Denis

2012-08-22

The use of blue phosphorescent emitters in organic light-emitting diodes (OLEDs) imposes demanding requirements on a host material. Among these are large triplet energies, the alignment of levels with respect to the emitter, the ability to form and sustain amorphous order, material processability, and an adequate charge carrier mobility. A possible design strategy is to choose a π-conjugated core with a high triplet level and to fulfill the other requirements by using suitable substituents. Bulky substituents, however, induce large spatial separations between conjugated cores, can substantially reduce intermolecular electronic couplings, and decrease the charge mobility of the host. In this work we analyze charge transport in amorphous 2,8-bis(triphenylsilyl)dibenzofuran, an electron-transporting material synthesized to serve as a host in deep-blue OLEDs. We show that mesomeric effects delocalize the frontier orbitals over the substituents recovering strong electronic couplings and lowering reorganization energies, especially for electrons, while keeping energetic disorder small. Admittance spectroscopy measurements reveal that the material has indeed a high electron mobility and a small Poole-Frenkel slope, supporting our conclusions. By linking electronic structure, molecular packing, and mobility, we provide a pathway to the rational design of hosts with high charge mobilities.

Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

NASA Astrophysics Data System (ADS)

De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

1996-08-01

This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

Silicon microelectronic field-emissive devices for advanced display technology

NASA Astrophysics Data System (ADS)

Morse, J. D.

1993-03-01

Field-emission displays (FED's) offer the potential advantages of high luminous efficiency, low power consumption, and low cost compared to AMLCD or CRT technologies. An LLNL team has developed silicon-point field emitters for vacuum triode structures and has also used thin-film processing techniques to demonstrate planar edge-emitter configurations. LLNL is interested in contributing its experience in this and other FED-related technologies to collaborations for commercial FED development. At LLNL, FED development is supported by computational capabilities in charge transport and surface/interface modeling in order to develop smaller, low-work-function field emitters using a variety of materials and coatings. Thin-film processing, microfabrication, and diagnostic/test labs permit experimental exploration of emitter and resistor structures. High field standoff technology is an area of long-standing expertise that guides development of low-cost spacers for FEDS. Vacuum sealing facilities are available to complete the FED production engineering process. Drivers constitute a significant fraction of the cost of any flat-panel display. LLNL has an advanced packaging group that can provide chip-on-glass technologies and three-dimensional interconnect generation permitting driver placement on either the front or the back of the display substrate.

Enhancing Three-dimensional Movement Control System for Assemblies of Machine-Building Facilities

NASA Astrophysics Data System (ADS)

Kuzyakov, O. N.; Andreeva, M. A.

2018-01-01

Aspects of enhancing three-dimensional movement control system are given in the paper. Such system is to be used while controlling assemblies of machine-building facilities, which is a relevant issue. The base of the system known is three-dimensional movement control device with optical principle of action. The device consists of multi point light emitter and light receiver matrix. The processing of signals is enhanced to increase accuracy of measurements by switching from discrete to analog signals. Light receiver matrix is divided into four areas, and the output value of each light emitter in each matrix area is proportional to its luminance level. Thus, determing output electric signal value of each light emitter in corresponding area leads to determing position of multipoint light emitter and position of object tracked. This is done by using Case-based reasoning method, the precedent in which is described as integral signal value of each matrix area, coordinates of light receivers, which luminance level is high, and decision to be made in this situation.

Optical phonon modes of III-V nanoparticles and indium phosphide/II-VI core-shell nanoparticles: A Raman and infrared study

NASA Astrophysics Data System (ADS)

Manciu, Felicia Speranta

The prospects for realizing efficient nanoparticle light emitters in the visible/near IR for communications and bio-medical applications have benefited from progress in chemical fabrication of nanoparticles. III-V semiconductor nanopaticles such as GaP and InP are promising materials for the development of "blue" and "green" emitters, respectively, due to their large effective bandgaps. Enhanced emission efficiency has been achieved for core-shell nanoparticles, since inorganic shell materials increase electronic tunability and may decrease surface defects that often occur for nanoparticles capped with organic molecules. Also, the emission wavelength of InP nanoparticle cores can be tuned from green to red by changing the shell material in InP/II-VI core-shell nanoparticles. Investigations of phonon modes in nanocrystals are of both fundamental and applied interest. In the former case the optical phonon modes, such as surface/interface modes, are dependent on the nanoparticle dimensions, and also can provide information about dynamical properties of the nanoparticles and test the validity of various theoretical approaches. In the latter case the vibronic properties of nanoparticle emitters are controlled by confined phonons and modifications of the electron-phonon interaction by the confinement. Thus, the objective of the present thesis is the detailed study of the phonon modes of III-V nanoparticles (GaP and InP) and InP/II-VI core-shell nanoparticles by IR absorption and Raman scattering spectroscopies, and an elucidation of their complex vibrational properties. With the exception of three samples (two GaP and one InP), all samples were synthesized by a novel colloidal chemistry method, which does not requires added surfactant, but rather treatment of the corresponding precursors in octadecene noncoordinative solvent. Sample quality was characterized by ED, TEM and X-ray diffraction. Based on a comparison with a dielectric continuum model, the observed features in the IR and Raman results are assigned to the surface optical (SO) modes of the corresponding nanoparticles (InP and GaP), and to SO/interface modes for InP/II-VI core-shell nanoparticles. For the latter systems, an evaluation of the ratio of the shell material thickness to the core radius is achieved. Reasonable agreement is obtained between the Raman and FIR results, as well as with the calculations. (Abstract shortened by UMI.)

Wavelength locking of single emitters and multi-emitter modules: simulation and experiments

NASA Astrophysics Data System (ADS)

Yanson, Dan; Rappaport, Noam; Peleg, Ophir; Berk, Yuri; Dahan, Nir; Klumel, Genady; Baskin, Ilya; Levy, Moshe

2016-03-01

Wavelength-stabilized high-brightness single emitters are commonly used in fiber-coupled laser diode modules for pumping Yb-doped lasers at 976 nm, and Nd-doped ones at 808 nm. We investigate the spectral behavior of single emitters under wavelength-selective feedback from a volume Bragg (or hologram) grating (VBG) in a multi-emitter module. By integrating a full VBG model as a multi-layer thin film structure with commercial raytracing software, we simulated wavelength locking conditions as a function of beam divergence and angular alignment tolerances. Good correlation between the simulated VBG feedback strength and experimentally measured locking ranges, in both VBG misalignment angle and laser temperature, is demonstrated. The challenges of assembling multi-emitter modules based on beam-stacked optical architectures are specifically addressed, where the wavelength locking conditions must be achieved simultaneously with high fiber coupling efficiency for each emitter in the module. It is shown that angular misorientation between fast and slow-axis collimating optics can have a dramatic effect on the spectral and power performance of the module. We report the development of our NEON-S wavelength-stabilized fiber laser pump module, which uses a VBG to provide wavelength-selective optical feedback in the collimated portion of the beam. Powered by our purpose-developed high-brightness single emitters, the module delivers 47 W output at 11 A from an 0.15 NA fiber and a 0.3 nm linewidth at 976 nm. Preliminary wavelength-locking results at 808 nm are also presented.

A novel controlled release ethanol emitter: preparation and effect on some postharvest quality parameters of Chinese bayberry during storage.

PubMed

Mu, Honglei; Gao, Haiyan; Chen, Hangjun; Fang, Xiangjun; Han, Qiang

2017-11-01

Reducing spoilage and prolonging the shelf-life of food materials are both critically important in the food industry. Among the many available preservatives, ethanol has been widely used for the storage of fruits and vegetables. Although a few ethanol emitters are available in the form of antimicrobial packaging, these ethanol emitters demonstrate high volatility, uncontrolled release and other disadvantages, and so the practical applications are limited. A novel ethanol gel with a controlled release rate was prepared by a gelatification reaction between ethanol and sodium stearate to overcome the disadvantage of conventional ethanol emitters. The hardness, adhesiveness and cohesiveness of developed ethanol gels increased, whereas the springiness decreased along with an increase in the sodium stearate concentration. The release rate of ethanol in the gels was controlled by the concentration of sodium stearate, in which a first-order release kinetic was observed. The release rate constant (k) of the gels with 12.5, 37.5, 62.5 g kg -1 of sodium stearate was 0.58 ± 0.029, 0.49 ± 0.035 and 0.41 ± 0.021 h -1 , respectively, at 25 °C. The application of the controlled release ethanol emitter with respect to the storage of Chinese bayberry fruit demonstrated its ability to reduce the decay rate, maintain firmness and inhibit increased malondialdehyde content at 4 °C. In terms of practical applications, an appropriate sodium stearate content can be selected in accordance with the storage period, aiming to achieve precise storage goals. Therefore, the ethanol emitter has potential application prospects as an active packaging for Chinese bayberry fruit, as well as for other perishable products. © 2017 Society of Chemical Industry. © 2017 Society of Chemical Industry.

Dibenzosiloles and 12H-indololo[3,2-d]naphtho[1,2-b][1]siloles: exploration of organic chromophores exhibiting efficient solid-state fluorescence.

PubMed

Shimizu, Masaki

2015-02-01

The construction of a diorganosilylene bridge over a biaryl moiety at the 2,2'-positions is a versatile strategy for fine-tuning its HOMO-LUMO energy gap, which is closely linked to the electronic and optical properties of the compounds. Therefore, there is growing interest in the use of silicon-bridged biaryl motifs as key cores of various types of advanced functional materials, such as light-emitting, semiconducting, photovoltaic, and sensing materials. To accelerate the advances of materials based on silicon-bridged biaryls, it is essential to create new classes of biaryls and explore their functions and properties. This Personal Account describes recent research on the development of organic chromophores based on functionalized dibenzosiloles and 12H-indololo[3,2-d]naphtho[1,2-b][1]siloles as solid-state emitters. Copyright © 2014 The Chemical Society of Japan and Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Organic emitters: Light-emitting fabrics

NASA Astrophysics Data System (ADS)

Ortí, Enrique; Bolink, Henk J.

2015-04-01

Light-emitting fibres that suit integration with textiles are prepared by dip-coating a steel wire with an electroluminescent material and then cleverly wrapping the structure with a carbon nanotube sheet that functions as a transparent electrode.

High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Sun, Xu-Guang; Wu, Di; Xu, Ting-Ting; Zhuang, Shi-Wei; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Recently, perovskite-based light-emitting diodes based on organometal halide emitters have attracted much attention because of their excellent properties of high color purity, tunable emission wavelength and a low-temperature processing technique. As is well-known, organic light-emitting diodes have shown powerful capabilities in this field; however, the fabrication of these devices typically relies on high-temperature and high-vacuum processes, which increases the final cost of the product and renders them uneconomical for use in large-area displays. Organic/inorganic hybrid halide perovskites match with these material requirements, as it is possible to prepare such materials with high crystallinity through solution processing at low temperature. Herein, we demonstrated a high-brightness green light-emitting diode based on PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structures by a spin-coating method combined with a sputtering system. Under forward bias, a dominant emission peak at ~530 nm with a low full width of half-maximum (FWHM) of 30 nm can be achieved at room temperature. Owing to the high surface coverage of the CH3NH3PbBr3 layer and a device design based on carrier injection and a confinement configuration, the proposed diode exhibits good electroluminescence performance, with an external quantum efficiency of 0.0645%. More importantly, we investigated the working stability of the studied diode under continuous operation to verify the sensitivity of the electroluminescence performance to ambient atmosphere and to assess the suitability of the diode for practical applications. Moreover, the underlying reasons for the undesirable emission decay are tentatively discussed. This demonstration of an effective green electroluminescence based on CH3NH3PbBr3 provides valuable information for the design and development of perovskites as efficient emitters, thus facilitating their use in existing applications and suggesting new potential applications.

On the feasibility of sub-100 nm rad emittance measurement in plasma accelerators using permanent magnetic quadrupoles

NASA Astrophysics Data System (ADS)

Li, F.; Wu, Y. P.; Nie, Z.; Guo, B.; Zhang, X. H.; Huang, S.; Zhang, J.; Cheng, Z.; Ma, Y.; Fang, Y.; Zhang, C. J.; Wan, Y.; Xu, X. L.; Hua, J. F.; Pai, C. H.; Lu, W.; Gu, Y. Q.

2018-01-01

Low emittance (sub-100 nm rad) measurement of electron beams in plasma accelerators has been a challenging issue for a while. Among various measurement schemes, measurements based on single-shot quad-scan using permanent magnetic quadrupoles (PMQs) has been recently reported with emittance as low as ˜200 nm Weingartner (2012 Phys. Rev. Spec. Top. Accel. Beams 15 111302). However, the accuracy and reliability of this method have not been systematically analyzed. Such analysis is critical for evaluating the potential of sub-100 nm rad emittance measurement using any scheme. In this paper, we analyze the effects of various nonideal physical factors on the accuracy and reliability using the PMQ method. These factors include aberration induced by a high order field, PMQ misalignment and angular fluctuation of incoming beams. Our conclusions are as follows: (i) the aberrations caused by high order fields of PMQs are relatively weak for low emittance measurement as long as the PMQs are properly constructed. A series of PMQs were manufactured and measured at Tsinghua University, and using numerical simulations their high order field effects were found to be negligible . (ii) The largest measurement error of emittance is caused by the angular misalignment between PMQs. For low emittance measurement of ˜100 MeV beams, an angular alignment accuracy of 0.1° is necessary. This requirement can be eased for beams with higher energies. (iii) The transverse position misalignment of PMQs and angular fluctuation of incoming beams only cause a translational and rotational shift of measured signals, respectively, therefore, there is no effect on the measured value of emittance. (iv) The spatial resolution and efficiency of the detection system need to be properly designed to guarantee the accuracy of sub-100 nm rad emittance measurement.

Bias-free lateral terahertz emitters—A simulation study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Granzner, R., E-mail: ralf.granzner@tu-ilmenau.de; Schwierz, F.; Polyakov, V. M.

2015-07-28

The design and performance of bias-free InN-based THz emitters that exploit lateral photocurrents is studied by means of numerical simulations. We use a drift-diffusion model with adjusted carrier temperatures and mobilities. The applicability of this approach is demonstrated by a comparison with results from Monte-Carlo simulations. We consider a simple but robust lateral emitter concept using metal stripes with two different thicknesses with one of them being thin enough to be transparent for THz radiation. This arrangement can be easily multiplexed and the efficiency of this concept has already been demonstrated by experiment for GaAs substrates. In the present study,more » we consider InN, which is known to be an efficient photo-Dember emitter because of its superior transport properties. Our main focus is on the impact of the emitter design on the emission efficiency assuming different operation principles. Both the lateral photo-Dember (LPD) effect and built-in lateral field effects are considered. The appropriate choice of the metal stripe and window geometry as well as the impact of surface Fermi level pinning are investigated in detail, and design guidelines for efficient large area emitters using multiplexed structures are provided. We find that InN LPD emitters do not suffer from Fermi level pinning at the InN surface. The optimum emission efficiency is found for LPD emitter structures having 200 nm wide illumination windows and mask stripes. Emitter structures in which lateral electric fields are induced by the metal mask contacts can have a considerably higher efficiency than pure LPD emitters. In the best case, the THz emission of such structures is increased by one order of magnitude. Their optimum window size is 1 μm without the necessity of a partially transparent set of mask stripes.« less

Single photon emitters in boron nitride: More than a supplementary material

NASA Astrophysics Data System (ADS)

Koperski, M.; Nogajewski, K.; Potemski, M.

2018-03-01

We present comprehensive optical studies of recently discovered single photon sources in boron nitride, which appear in form of narrow lines emitting centres. Here, we aim to compactly characterise their basic optical properties, including the demonstration of several novel findings, in order to inspire discussion about their origin and utility. Initial inspection reveals the presence of narrow emission lines in boron nitride powder and exfoliated flakes of hexagonal boron nitride deposited on Si/SiO2 substrates. Generally rather stable, the boron nitride emitters constitute a good quality visible light source. However, as briefly discussed, certain specimens reveal a peculiar type of blinking effects, which are likely related to existence of meta-stable electronic states. More advanced characterisation of representative stable emitting centres uncovers a strong dependence of the emission intensity on the energy and polarisation of excitation. On this basis, we speculate that rather strict excitation selectivity is an important factor determining the character of the emission spectra, which allows the observation of single and well-isolated emitters. Finally, we investigate the properties of the emitting centres in varying external conditions. Quite surprisingly, it is found that the application of a magnetic field introduces no change in the emission spectra of boron nitride emitters. Further analysis of the impact of temperature on the emission spectra and the features seen in second-order correlation functions is used to provide an assessment of the potential functionality of boron nitride emitters as single photon sources capable of room temperature operation.

Application of CTLM method combining interfacial structure characterization to investigate contact formation of silver paste metallization on crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Xiong, Shenghu; Yuan, Xiao; Tong, Hua; Yang, Yunxia; Liu, Cui; Ye, Xiaojun; Li, Yongsheng; Wang, Xianhao; Luo, Lan

2018-04-01

Circular transmission line model (CTLM) measurements were applied to study the contact formation mechanism of the silver paste metallization on n-type emitter of crystalline silicon solar cells. The electrical performance parameters ρc,Rsk , and Lt , which are related to the physical and chemical states of the multiphase materials at the interface, were extracted from the CTLM measurements, and were found to be sensitive to sintering temperature. As the temperature increased from 585 °C to 780 °C, initially the ρc value decreased rapidly, then flattened out and increased slightly. The order of resistivity magnitude was restricted by the SiNx passivation layer in the early sintering stages, and relied on the carrier tunneling probability affected by the precipitated silver crystallites or colloids, emitter doping concentration and molten glass layer. Based on the calculations that the sheet resistance underneath the electrode was reduced form 110 Ω / □ to 0.186 Ω / □ , it could be inferred that there was formation of a highly conductive layer of silver crystallites and colloids contained glass on the emitter. The transfer length Lt exhibited a U-shaped variation along with the temperature, reflecting the variation of the interfacial electrical properties. Overall, this article shows that the CTLM method can become a new powerful tool for researchers to meet the challenges of silver paste metallization innovation for manufacturing high-efficiency silicon solar cells.

970-nm ridge waveguide diode laser bars for high power DWBC systems

NASA Astrophysics Data System (ADS)

Wilkens, Martin; Erbert, Götz; Wenzel, Hans; Knigge, Andrea; Crump, Paul; Maaßdorf, Andre; Fricke, Jörg; Ressel, Peter; Strohmaier, Stephan; Schmidt, Berthold; Tränkle, Günther

2018-02-01

de lasers are key components in material processing laser systems. While mostly used as pump sources for solid state or fiber lasers, direct diode laser systems using dense wavelength multiplexing have come on the market in recent years. These systems are realized with broad area lasers typically, resulting in beam quality inferior to disk or fiber lasers. We will present recent results of highly efficient ridge waveguide (RW) lasers, developed for dense-wavelength-beamcombining (DWBC) laser systems expecting beam qualities comparable to solid state laser systems and higher power conversion efficiencies (PCE). The newly developed RW lasers are based on vertical structures with an extreme double asymmetric large optical cavity. Besides a low vertical divergence these structures are suitable for RW-lasers with (10 μm) broad ridges, emitting in a single mode with a good beam quality. The large stripe width enables a lateral divergence below 10° (95 % power content) and a high PCE by a comparably low series resistance. We present results of single emitters and small test arrays under different external feedback conditions. Single emitters can be tuned from 950 nm to 975 nm and reach 1 W optical power with more than 55 % PCE and a beam quality of M2 < 2 over the full wavelength range. The spectral width is below 30 pm FWHM. 5 emitter arrays were stabilized using the same setup. Up to now we reached 3 W optical power, limited by power supply, with 5 narrow spectral lines.

Operational experience with nanocoulomb bunch charges in the Cornell photoinjector

DOE PAGES

Bartnik, Adam; Gulliford, Colwyn; Bazarov, Ivan; ...

2015-08-19

Characterization of 9–9.5 MeV electron beams produced in the dc-gun based Cornell photoinjector is given for bunch charges ranging from 20 pC to 2 nC. Comparison of the measured emittances and longitudinal current profiles to optimized 3D space charge simulations yields excellent agreement for bunch charges up to 1 nC when the measured laser distribution is used to generate initial particle distributions in simulation. Analysis of the scaling of the measured emittance with bunch charge shows that the emittance scales roughly as the square root of the bunch charge up to 300 pC, above which the trend becomes linear. Furthermore,more » these measurements demonstrate that the Cornell photoinjector can produce cathode emittance dominated beams meeting the emittance and peak current specifications for next generation free electron lasers operating at high repetition rate. In addition, the 1 and 2 nC results are relevant to the electron ion collider community.« less

Development and Testing of High Current Hollow Cathodes for High Power Hall Thrusters

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Van Noord, Jonathan

2012-01-01

NASA's Office of the Chief Technologist In-Space Propulsion project is sponsoring the testing and development of high power Hall thrusters for implementation in NASA missions. As part of the project, NASA Glenn Research Center is developing and testing new high current hollow cathode assemblies that can meet and exceed the required discharge current and life-time requirements of high power Hall thrusters. This paper presents test results of three high current hollow cathode configurations. Test results indicated that two novel emitter configurations were able to attain lower peak emitter temperatures compared to state-of-the-art emitter configurations. One hollow cathode configuration attained a cathode orifice plate tip temperature of 1132 degC at a discharge current of 100 A. More specifically, test and analysis results indicated that a novel emitter configuration had minimal temperature gradient along its length. Future work will include cathode wear tests, and internal emitter temperature and plasma properties measurements along with detailed physics based modeling.

Waveguide quantum electrodynamics in squeezed vacuum

NASA Astrophysics Data System (ADS)

You, Jieyu; Liao, Zeyang; Li, Sheng-Wen; Zubairy, M. Suhail

2018-02-01

We study the dynamics of a general multiemitter system coupled to the squeezed vacuum reservoir and derive a master equation for this system based on the Weisskopf-Wigner approximation. In this theory, we include the effect of positions of the squeezing sources which is usually neglected in the previous studies. We apply this theory to a quasi-one-dimensional waveguide case where the squeezing in one dimension is experimentally achievable. We show that while dipole-dipole interaction induced by ordinary vacuum depends on the emitter separation, the two-photon process due to the squeezed vacuum depends on the positions of the emitters with respect to the squeezing sources. The dephasing rate, decay rate, and the resonance fluorescence of the waveguide-QED in the squeezed vacuum are controllable by changing the positions of emitters. Furthermore, we demonstrate that the stationary maximum entangled NOON state for identical emitters can be reached with arbitrary initial state when the center-of-mass position of the emitters satisfies certain conditions.

A multiple-scattering polaritonic-operator method for hybrid arrays of metal nanoparticles and quantum emitters

NASA Astrophysics Data System (ADS)

Chatzidakis, Georgios D.; Yannopapas, Vassilios

2018-05-01

We present a new technique for the study of hybrid collections of quantum emitters (atoms, molecules, quantum dots) with nanoparticles. The technique is based on a multiple-scattering polaritonic-operator formalism in conjunction with an electromagnetic coupled dipole method. Apart from collections of quantum emitters and nanoparticles, the method can equally treat the interaction of a collection of quantum emitters with a single nano-object of arbitrary shape in which case the nano-object is treated as a finite three-dimensional lattice of point scatterers. We have applied our method to the case of linear array (chain) of dimers of quantum emitters and metallic nanoparticles wherein the corresponding (geometrical and physical) parameters of the dimers are chosen so as the interaction between the emitter and the nanoparticle lies in the strong-coupling regime in order to enable the formation of plexciton states in the dimer. In particular, for a linear chain of dimers, we show that the corresponding light spectra reveal a multitude of plexciton modes resulting from the hybridization of the plexciton resonances of each individual dimer in a manner similar to the tight-binding description of electrons in solids.

High brightness fiber laser pump sources based on single emitters and multiple single emitters

NASA Astrophysics Data System (ADS)

Scheller, Torsten; Wagner, Lars; Wolf, Jürgen; Bonati, Guido; Dörfel, Falk; Gabler, Thomas

2008-02-01

Driven by the potential of the fiber laser market, the development of high brightness pump sources has been pushed during the last years. The main approaches to reach the targets of this market had been the direct coupling of single emitters (SE) on the one hand and the beam shaping of bars and stacks on the other hand, which often causes higher cost per watt. Meanwhile the power of single emitters with 100μm emitter size for direct coupling increased dramatically, which also pushed a new generation of wide stripe emitters or multi emitters (ME) of up to 1000μm emitter size respectively "minibars" with apertures of 3 to 5mm. The advantage of this emitter type compared to traditional bars is it's scalability to power levels of 40W to 60W combined with a small aperture which gives advantages when coupling into a fiber. We show concepts using this multiple single emitters for fiber coupled systems of 25W up to 40W out of a 100μm fiber NA 0.22 with a reasonable optical efficiency. Taking into account a further efficiency optimization and an increase in power of these devices in the near future, the EUR/W ratio pushed by the fiber laser manufacturer will further decrease. Results will be shown as well for higher power pump sources. Additional state of the art tapered fiber bundles for photonic crystal fibers are used to combine 7 (19) pump sources to output powers of 100W (370W) out of a 130μm (250μm) fiber NA 0.6 with nominal 20W per port. Improving those TFB's in the near future and utilizing 40W per pump leg, an output power of even 750W out of 250μm fiber NA 0.6 will be possible. Combined Counter- and Co-Propagated pumping of the fiber will then lead to the first 1kW fiber laser oscillator.

Influence of humidity on the initial emittable concentration of formaldehyde and hexaldehyde in building materials: experimental observation and correlation.

PubMed

Huang, Shaodan; Xiong, Jianyin; Cai, Chaorui; Xu, Wei; Zhang, Yinping

2016-03-30

Humidity is one of the main environmental factors affecting the emission rate and key parameters of formaldehyde and volatile organic compounds (VOCs) from building materials. Meanwhile, the initial emittable concentration (Cm,0) is proved to be the most sensitive key parameter to the emission behaviours. However, there is no report on the relationship between humidity and Cm,0. In this paper, Cm,0 of formaldehyde and hexaldehyde from a type of medium density fiberboard in absolute humidity (AH) range of 4.6-19.6 g/m(3) at 25 °C were tested by virtue of a C-history method. Experimental results indicate that Cm,0 is dramatically dependent on AH, increased by 10 and 2 times for formaldehyde and hexaldehyde when AH rising from 4.6 g/m(3) to 19.6 g/m(3). A linear relationship between the logarithm of Cm,0 and AH is obtained based on the measured results. In addition, a correlation characterizing the association of emission rate and AH is derived. The effectiveness of the correlation is verified with our experimental results as well as data from literature. With the correlations, the Cm,0 or emission rate different from the test AH conditions can be conveniently obtained. This study should be useful for predicting the emission characteristics of humidity changing scenarios and for source control.

Nonradiating and radiating modes excited by quantum emitters in open epsilon-near-zero cavities

PubMed Central

Liberal, Iñigo; Engheta, Nader

2016-01-01

Controlling the emission and interaction properties of quantum emitters (QEs) embedded within an optical cavity is a key technique in engineering light-matter interactions at the nanoscale, as well as in the development of quantum information processing. State-of-the-art optical cavities are based on high quality factor photonic crystals and dielectric resonators. However, wealthier responses might be attainable with cavities carved in more exotic materials. We theoretically investigate the emission and interaction properties of QEs embedded in open epsilon-near-zero (ENZ) cavities. Using analytical methods and numerical simulations, we demonstrate that open ENZ cavities present the unique property of supporting nonradiating modes independently of the geometry of the external boundary of the cavity (shape, size, topology, etc.). Moreover, the possibility of switching between radiating and nonradiating modes enables a dynamic control of the emission by, and the interaction between, QEs. These phenomena provide unprecedented degrees of freedom in controlling and trapping fields within optical cavities, as well as in the design of cavity opto- and acoustomechanical systems. PMID:27819047

Nonradiating and radiating modes excited by quantum emitters in open epsilon-near-zero cavities.

PubMed

Liberal, Iñigo; Engheta, Nader

2016-10-01

Controlling the emission and interaction properties of quantum emitters (QEs) embedded within an optical cavity is a key technique in engineering light-matter interactions at the nanoscale, as well as in the development of quantum information processing. State-of-the-art optical cavities are based on high quality factor photonic crystals and dielectric resonators. However, wealthier responses might be attainable with cavities carved in more exotic materials. We theoretically investigate the emission and interaction properties of QEs embedded in open epsilon-near-zero (ENZ) cavities. Using analytical methods and numerical simulations, we demonstrate that open ENZ cavities present the unique property of supporting nonradiating modes independently of the geometry of the external boundary of the cavity (shape, size, topology, etc.). Moreover, the possibility of switching between radiating and nonradiating modes enables a dynamic control of the emission by, and the interaction between, QEs. These phenomena provide unprecedented degrees of freedom in controlling and trapping fields within optical cavities, as well as in the design of cavity opto- and acoustomechanical systems.

Synthesis and spectral properties of Methyl-Phenyl pyrazoloquinoxaline fluorescence emitters: Experiment and DFT/TDDFT calculations

NASA Astrophysics Data System (ADS)

Gąsiorski, P.; Matusiewicz, M.; Gondek, E.; Uchacz, T.; Wojtasik, K.; Danel, A.; Shchur, Ya.; Kityk, A. V.

2018-01-01

Paper reports the synthesis and spectroscopic studies of two novel 1-Methyl-3-phenyl-1H-pyrazolo[3,4-b]quinoxaline (PQX) derivatives with 6-substituted methyl (MeMPPQX) or methoxy (MeOMPPQX) side groups. The optical absorption and fluorescence emission spectra are recorded in solvents of different polarity. Steady state and time-resolved spectroscopy provide photophysical characterization of MeMPPQX and MeOMPPQX dyes as materials for potential luminescence or electroluminescence applications. Measured optical absorption and fluorescence emission spectra are compared with quantum-chemical DFT/TDDFT calculations using long-range corrected xc-functionals, LRC-BLYP and CAM-B3LYP in combination with self-consistent reaction field model based on linear response (LR), state specific (SS) or corrected linear response (CLR) solvations. Performances of relevant theoretical models and approaches are compared. The reparameterized LRC-BLYP functional (ω = 0.231 Bohr-1) in combination with CLR solvation provides most accurate prediction of both excitation and emission energies. The MeMPPQX and MeOMPPQX dyes represent efficient fluorescence emitters in blue-green region of the visible spectra.

Highly efficient exciplex organic light-emitting diodes using thermally activated delayed fluorescent emitters as donor and acceptor materials.

PubMed

Jeon, Sang Kyu; Yook, Kyoung Soo; Lee, Jun Yeob

2016-06-03

Highly efficient exciplex type organic light-emitting diodes were developed using thermally activated delayed fluorescent emitters as donors and acceptors of an exciplex. Blue emitting bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS) was a donor and 9,9'-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole) (DDCzTrz) and 9,9',9″-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)benzene-1,2,3-triyl)tris(9H-carbazole) (TCzTrz) were acceptor materials. The exciplexes of DMAC-DPS:TCzTrz and DMAC-DPS:DDCzTrz resulted in high photoluminescence quantum yield and high quantum efficiency in the green exciplex organic light-emitting diodes. High quantum efficiencies of 13.4% and 15.3% were obtained in the DMAC-DPS:DDCzTrz and DMAC-DPS:TCzTrz exciplex devices.

Highly efficient exciplex organic light-emitting diodes using thermally activated delayed fluorescent emitters as donor and acceptor materials

NASA Astrophysics Data System (ADS)

Jeon, Sang Kyu; Yook, Kyoung Soo; Lee, Jun Yeob

2016-06-01

Highly efficient exciplex type organic light-emitting diodes were developed using thermally activated delayed fluorescent emitters as donors and acceptors of an exciplex. Blue emitting bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS) was a donor and 9,9‧-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole) (DDCzTrz) and 9,9‧,9″-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)benzene-1,2,3-triyl)tris(9H-carbazole) (TCzTrz) were acceptor materials. The exciplexes of DMAC-DPS:TCzTrz and DMAC-DPS:DDCzTrz resulted in high photoluminescence quantum yield and high quantum efficiency in the green exciplex organic light-emitting diodes. High quantum efficiencies of 13.4% and 15.3% were obtained in the DMAC-DPS:DDCzTrz and DMAC-DPS:TCzTrz exciplex devices.

Degradation Mechanisms in Blue Phosphorescent Organic Light-Emitting Devices by Exciton-Polaron Interactions: Loss in Quantum Yield versus Loss in Charge Balance.

PubMed

Zhang, Yingjie; Aziz, Hany

2017-01-11

We study the relative importance of deterioration of material quantum yield and charge balance to the electroluminescence stability of PHOLEDs, with a special emphasis on blue devices. Investigations show that the quantum yields of both host and emitter in the emission layer degrade due to exciton-polaron interactions and that the deterioration in material quantum yield plays the primary role in device degradation under operation. On the other hand, the results show that the charge balance factor is also affected by exciton-polaron interactions but only plays a secondary role in determining device stability. Finally, we show that the degradation mechanisms in blue PHOLEDs are fundamentally the same as those in green PHOLEDs. The limited stability of the blue devices is a result of faster deterioration in the quantum yield of the emitter.

Low-emittance tuning of storage rings using normal mode beam position monitor calibration

NASA Astrophysics Data System (ADS)

Wolski, A.; Rubin, D.; Sagan, D.; Shanks, J.

2011-07-01

We describe a new technique for low-emittance tuning of electron and positron storage rings. This technique is based on calibration of the beam position monitors (BPMs) using excitation of the normal modes of the beam motion, and has benefits over conventional methods. It is relatively fast and straightforward to apply, it can be as easily applied to a large ring as to a small ring, and the tuning for low emittance becomes completely insensitive to BPM gain and alignment errors that can be difficult to determine accurately. We discuss the theory behind the technique, present some simulation results illustrating that it is highly effective and robust for low-emittance tuning, and describe the results of some initial experimental tests on the CesrTA storage ring.

Efficient red organic electroluminescent devices by doping platinum(II) Schiff base emitter into two host materials with stepwise energy levels.

PubMed

Zhou, Liang; Kwok, Chi-Chung; Cheng, Gang; Zhang, Hongjie; Che, Chi-Ming

2013-07-15

In this work, organic electroluminescent (EL) devices with double light-emitting layers (EMLs) having stepwise energy levels were designed to improve the EL performance of a red-light-emitting platinum(II) Schiff base complex. A series of devices with single or double EML(s) were fabricated and characterized. Compared with single-EML devices, double-EML devices showed improved EL efficiency and brightness, attributed to better balance in carriers. In addition, the stepwise distribution in energy levels of host materials is instrumental in broadening the recombination zone, thus delaying the roll-off of EL efficiency. The highest EL current efficiency and power efficiency of 17.36 cd/A and 14.73 lm/W, respectively, were achieved with the optimized double-EML devices. At high brightness of 1000 cd/m², EL efficiency as high as 8.89 cd/A was retained.

Effect of quantum well position on the distortion characteristics of transistor laser

NASA Astrophysics Data System (ADS)

Piramasubramanian, S.; Ganesh Madhan, M.; Radha, V.; Shajithaparveen, S. M. S.; Nivetha, G.

2018-05-01

The effect of quantum well position on the modulation and distortion characteristics of a 1300 nm transistor laser is analyzed in this paper. Standard three level rate equations are numerically solved to study this characteristics. Modulation depth, second order harmonic and third order intermodulation distortion of the transistor laser are evaluated for different quantum well positions for a 900 MHz RF signal modulation. From the DC analysis, it is observed that optical power is maximum, when the quantum well is positioned near base-emitter interface. The threshold current of the device is found to increase with increasing the distance between the quantum well and the base-emitter junction. A maximum modulation depth of 0.81 is predicted, when the quantum well is placed at 10 nm from the base-emitter junction, under RF modulation. The magnitude of harmonic and intermodulation distortion are found to decrease with increasing current and with an increase in quantum well distance from the emitter base junction. A minimum second harmonic distortion magnitude of -25.96 dBc is predicted for quantum well position (230 nm) near to the base-collector interface for 900 MHz modulation frequency at a bias current of 20 Ibth. Similarly, a minimum third order intermodulation distortion of -38.2 dBc is obtained for the same position and similar biasing conditions.

Enhanced thermaly managed packaging for III-nitride light emitters

NASA Astrophysics Data System (ADS)

Kudsieh, Nicolas

In this Dissertation our work on `enhanced thermally managed packaging of high power semiconductor light sources for solid state lighting (SSL)' is presented. The motivation of this research and development is to design thermally high stable cost-efficient packaging of single and multi-chip arrays of III-nitrides wide bandgap semiconductor light sources through mathematical modeling and simulations. Major issues linked with this technology are device overheating which causes serious degradation in their illumination intensity and decrease in the lifetime. In the introduction the basics of III-nitrides WBG semiconductor light emitters are presented along with necessary thermal management of high power cingulated and multi-chip LEDs and laser diodes. This work starts at chip level followed by its extension to fully packaged lighting modules and devices. Different III-nitride structures of multi-quantum well InGaN/GaN and AlGaN/GaN based LEDs and LDs were analyzed using advanced modeling and simulation for different packaging designs and high thermal conductivity materials. Study started with basic surface mounted devices using conventional packaging strategies and was concluded with the latest thermal management of chip-on-plate (COP) method. Newly discovered high thermal conductivity materials have also been incorporated for this work. Our study also presents the new approach of 2D heat spreaders using such materials for SSL and micro LED array packaging. Most of the work has been presented in international conferences proceedings and peer review journals. Some of the latest work has also been submitted to well reputed international journals which are currently been reviewed for publication. .

High temperature performance of high-efficiency, multi-layer solar selective coatings for tower applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gray, M. H.; Tirawat, R.; Kessinger, K. A.

The roadmap to next-generation concentrating solar power plants anticipates a progression to central towers with operating temperatures in excess of 650°C. These higher temperatures are required to drive higher power-cycle efficiencies, resulting in lower cost energy. However, these conditions also place a greater burden on the materials making up the receiver. Any novel absorber material developed for next-generation receivers must be stable in air, cost effective, and survive thousands of heating and cooling cycles. The collection efficiency of a power tower plant can be increased if the energy absorbed by the receiver is maximized while the heat loss from themore » receiver to the environment is minimized. Thermal radiation losses can be significant (>7% annual energy loss) with receivers at temperatures above 650°C. We present progress toward highly efficient and durable solar selective absorbers (SSAs) intended for operating temperatures from 650°C to 1000°C. Selective efficiency (η sel) is defined as the energy retained by the absorber, accounting for both absorptance and emittance, relative to the energy incident on the surface. The low emittance layers of multilayer SSAs are binary compounds of refractory metals whose material properties indicate that coatings formed of these materials should be oxidation resistant in air to 800-1200°C. On this basis, we initially developed a solar selective coating for parabolic troughs. This development has been successfully extended to meet the absorptance and emittance objectives for the more demanding, high temperature regime. We show advancement in coating materials, processing and designs resulting in the initial attainment of target efficiencies η sel > 0.91 for proposed tower conditions. Additionally, spectral measurements show that these coatings continue to perform at targeted levels after cycling to temperatures of 1000°C in environments of nitrogen and forming gas.« less

High temperature performance of high-efficiency, multi-layer solar selective coatings for tower applications

DOE PAGES

Gray, M. H.; Tirawat, R.; Kessinger, K. A.; ...

2015-05-01

The roadmap to next-generation concentrating solar power plants anticipates a progression to central towers with operating temperatures in excess of 650°C. These higher temperatures are required to drive higher power-cycle efficiencies, resulting in lower cost energy. However, these conditions also place a greater burden on the materials making up the receiver. Any novel absorber material developed for next-generation receivers must be stable in air, cost effective, and survive thousands of heating and cooling cycles. The collection efficiency of a power tower plant can be increased if the energy absorbed by the receiver is maximized while the heat loss from themore » receiver to the environment is minimized. Thermal radiation losses can be significant (>7% annual energy loss) with receivers at temperatures above 650°C. We present progress toward highly efficient and durable solar selective absorbers (SSAs) intended for operating temperatures from 650°C to 1000°C. Selective efficiency (η sel) is defined as the energy retained by the absorber, accounting for both absorptance and emittance, relative to the energy incident on the surface. The low emittance layers of multilayer SSAs are binary compounds of refractory metals whose material properties indicate that coatings formed of these materials should be oxidation resistant in air to 800-1200°C. On this basis, we initially developed a solar selective coating for parabolic troughs. This development has been successfully extended to meet the absorptance and emittance objectives for the more demanding, high temperature regime. We show advancement in coating materials, processing and designs resulting in the initial attainment of target efficiencies η sel > 0.91 for proposed tower conditions. Additionally, spectral measurements show that these coatings continue to perform at targeted levels after cycling to temperatures of 1000°C in environments of nitrogen and forming gas.« less

Non-contact pumping of light emitters via non-radiative energy transfer

DOEpatents

Klimov, Victor I.; Achermann, Marc

2010-01-05

A light emitting device is disclosed including a primary light source having a defined emission photon energy output, and, a light emitting material situated near to said primary light source, said light emitting material having an absorption onset equal to or less in photon energy than the emission photon energy output of the primary light source whereby non-radiative energy transfer from said primary light source to said light emitting material can occur yielding light emission from said light emitting material.

Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

NASA Astrophysics Data System (ADS)

Radauscher, Erich Justin

Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing capabilities, and average lifetimes of over 320 hours when operated in constant emission mode under elevated pressures, without sacrificing performance. Additionally, a novel packaged ion source for miniature mass spectrometer applications using CNT emitters, a MEMS based Nier-type geometry, and a Low Temperature Cofired Ceramic (LTCC) 3D scaffold with integrated ion optics were developed and characterized. While previous research has shown other devices capable of collecting ion currents on chip, this LTCC packaged MEMS micro-ion source demonstrated improvements in energy and angular dispersion as well as the ability to direct the ions out of the packaged source and towards a mass analyzer. Simulations and experimental design, fabrication, and characterization were used to make these improvements. Finally, novel CNT-FE devices were developed to investigate their potential to perform as active circuit elements in VMD circuits. Difficulty integrating devices at micron-scales has hindered the use of vacuum electronic devices in integrated circuits, despite the unique advantages they offer in select applications. Using a combination of particle trajectory simulation and experimental characterization, device performance in an integrated platform was investigated. Solutions to the difficulties in operating multiple devices in close proximity and enhancing electron transmission (i.e., reducing grid loss) are explored in detail. A systematic and iterative process was used to develop isolation structures that reduced crosstalk between neighboring devices from 15% on average, to nearly zero. Innovative geometries and a new operational mode reduced grid loss by nearly threefold, thereby improving transmission of the emitted cathode current to the anode from 25% in initial designs to 70% on average. These performance enhancements are important enablers for larger scale integration and for the realization of complex vacuum microelectronic circuits.

Thermionic performance of a cesium diminiode with relatively impure 110-tungsten electrodes

NASA Technical Reports Server (NTRS)

Smith, A. L.; Manista, E. J.; Morris, J. F.

1974-01-01

Thermionic performance data from a miniature plane cesium diode (diminiode) with 110-tungsten electrodes are presented. The diminiode has a guard-ringed collector and a spacing of 0.23 mm. The data were obtained by using a computerized acquisition system. The diode was tested at increments between 1700 and 1900 K for the emitter, 694 and 1101 K for the collector, and 519 and 650 K for the reservoir. A maximum power density of 4.5 W/sq cm was obtained at an emitter temperature of 1900 K. This relatively low output probably results from high carbon and sodium impurities in the electrode materials.

The role of upstream distal electrodes in mitigating electrochemical degradation of ionic liquid ion sources

NASA Astrophysics Data System (ADS)

Brikner, Natalya; Lozano, Paulo C.

2012-11-01

Ionic liquid ion sources produce molecular ions from micro-tip emitters wetted with room-temperature molten salts. When a single ion polarity is extracted, counterions accumulate and generate electrochemical reactions that limit the source lifetime. The dynamics of double layer formation are reviewed and distal electrode contacts are introduced to resolve detrimental electrochemical decomposition effects at the micro-tip apex. By having the emitter follow the ionic liquid potential, operation can be achieved for an extended period of time with no apparent degradation of the material, indicating that electrochemistry can be curtailed and isolated to the upstream distal electrode.

Variable anodic thermal control coating on aluminum

NASA Technical Reports Server (NTRS)

Duckett, R. J.; Gilliland, C. S.

1983-01-01

A variable thermal control coating (modified chromic acid anodizing) has been developed to meet the needs for the thermal control of spacecraft. This coating, with controlled variable ranges of 0.10 to 0.72 thermal emittance and 0.2 to 0.4 solar absorptance, allows the user to select any value of thermal emittance and solar absorptance within the range specified and obtain both values within + or - 0.02. Preliminary solar stability has shown less than 15 percent degradation over 2000 hours of vacuum solar exposure. The technique has been determined to be sensitive to the parameters of voltage, rate of voltage application, time, temperature, acid concentration, and material pretreatment.

Electroluminescence Properties of IrQ(ppy)2 Dual-Emitter Organometallic Compound in Organic Light-Emitting Devices

NASA Astrophysics Data System (ADS)

Ciobotaru, Constantin Claudiu; Polosan, Silviu; Ciobotaru, Iulia Corina

2018-02-01

This paper reports the influence of the charge carrier mobility on the electroluminescent properties of a dual-emitter organometallic compound dispersed in two conjugated organic small-molecule host materials and embedded in organic light-emitting devices (OLEDs). The electroluminescent processes in OLEDs are strongly influenced by the host-guest interaction. The charge carrier mobility in the host material plays an important role in the electroluminescent processes but also depends on the triplet-triplet interaction with the organometallic compound. The low charge carrier mobility in 4,4'-bis( N-carbazolyl)-1,1'-biphenyl (CBP) host material reduces the electroluminescent processes, but they are slightly enhanced by the triplet-triplet exothermic charge transfer. The higher charge carrier mobility in the case of N, N'-bis(3-methylphenyl)- N, N'-diphenylbenzidine (TPD) host material influences the electroluminescent processes by the endothermic energy transfer at room temperature, which facilitates the triplet-triplet harvesting in the host-guest system. The excitation is transferred to the guest molecules by triplet-triplet interaction as a Dexter transfer, which occurs by endothermic transfer from the triplet exciton in the host to the triplet exciton in the guest.

SEPARATION OF Cs$sup 137$ FROM HIGH-ACTIVITY RADIOACTIVE WASTE (in Dutch)

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

1963-01-01

A process was developed on a laboratory scale to separate Cs/sup 137/ from waste fuels of atomic reactors. The recovery of this powerful and industrially important gamma emitter of 30 years half life is said to be so simple as to make it possible on an industrial scale. It is based on the preferential absorption of Cs by ammonium phosphor-molybdate from the nitric acid solution of the waste material and the subsequent extraction of Cs from its absorber. This method is more practical than other processes which are based upon precipitation and recrystallization of cesium salts. It was successfully testedmore » on waste solutions of very different compositions. (OID)« less

InP shallow-homojunction solar cells

NASA Technical Reports Server (NTRS)

Keavney, Christopher; Spitzer, Mark B.; Vernon, Stanley M.; Haven, Victor E.; Augustine, Godfrey

1989-01-01

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

GPU-Accelerated Hybrid Algorithm for 3D Localization of Fluorescent Emitters in Dense Clusters

NASA Astrophysics Data System (ADS)

Jung, Yoon; Barsic, Anthony; Piestun, Rafael; Fakhri, Nikta

In stochastic switching-based super-resolution imaging, a random subset of fluorescent emitters are imaged and localized for each frame to construct a single high resolution image. However, the condition of non-overlapping point spread functions (PSFs) imposes constraints on experimental parameters. Recent development in post processing methods such as dictionary-based sparse support recovery using compressive sensing has shown up to an order of magnitude higher recall rate than single emitter fitting methods. However, the computational complexity of this approach scales poorly with the grid size and requires long runtime. Here, we introduce a fast and accurate compressive sensing algorithm for localizing fluorescent emitters in high density in 3D, namely sparse support recovery using Orthogonal Matching Pursuit (OMP) and L1-Homotopy algorithm for reconstructing STORM images (SOLAR STORM). SOLAR STORM combines OMP with L1-Homotopy to reduce computational complexity, which is further accelerated by parallel implementation using GPUs. This method can be used in a variety of experimental conditions for both in vitro and live cell fluorescence imaging.

Measuring the number of independent emitters in single-molecule fluorescence images and trajectories using coincident photons.

PubMed

Weston, Kenneth D; Dyck, Martina; Tinnefeld, Philip; Müller, Christian; Herten, Dirk P; Sauer, Markus

2002-10-15

A simple new approach is described and demonstrated for measuring the number of independent emitters along with the fluorescence intensity, lifetime, and emission wavelength for trajectories and images of single molecules and multichromophoric systems using a single PC plug-in card for time-correlated single-photon counting. The number of independent emitters present in the detection volume can be determined using the interphoton times in a manner similar to classical antibunching experiments. In contrast to traditional coincidence analysis based on pulsed laser excitation and direct measurement of coincident photon pairs using a time-to-amplitude converter, the interphoton distances are retrieved afterward by recording the absolute arrival time of each photon with nanosecond time resolution on two spectrally separated detectors. Intensity changes that result from fluctuations of a photophysical parameter can be distinguished from fluctuations due to changes in the number of emitters (e.g., photobleaching) in single chromophore and multichromophore intensity trajectories. This is the first report to demonstrate imaging with contrast based on the number of independently emitting species within the detection volume.

Fowler Nordheim theory of carbon nanotube based field emitters

NASA Astrophysics Data System (ADS)

Parveen, Shama; Kumar, Avshish; Husain, Samina; Husain, Mushahid

2017-01-01

Field emission (FE) phenomena are generally explained in the frame-work of Fowler Nordheim (FN) theory which was given for flat metal surfaces. In this work, an effort has been made to present the field emission mechanism in carbon nanotubes (CNTs) which have tip type geometry at nanoscale. High aspect ratio of CNTs leads to large field enhancement factor and lower operating voltages because the electric field strength in the vicinity of the nanotubes tip can be enhanced by thousand times. The work function of nanostructure by using FN plot has been calculated with reverse engineering. With the help of modified FN equation, an important formula for effective emitting area (active area for emission of electrons) has been derived and employed to calculate the active emitting area for CNT field emitters. Therefore, it is of great interest to present a state of art study on the complete solution of FN equation for CNTs based field emitter displays. This manuscript will also provide a better understanding of calculation of different FE parameters of CNTs field emitters using FN equation.

RF Guns for Generation of Polarized Electron Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J.E.; Brachmann, A.; Dowell, D.H.

2005-11-09

Several accelerators, including the SLC, JLAB, Mainz, Bates/MIT, and Bonn have successfully operated for medium and high energy physics experiments using polarized electron beams generated by dc-biased guns employing GaAs photocathodes. Since these guns have all used a bias on the order of 100 kV, the longitudinal emittance of the extracted bunch is rather poor. Downstream rf bunching systems increase the transverse emittance. An rf gun with a GaAs photocathode would eliminate the need for separate rf bunchers, resulting in a simpler injection system. In addition, the thermal emittance of GaAs-type cathodes is significantly lower than for other photocathode materials.more » The environmental requirements for operating activated GaAs photocathodes cannot be met by rf guns as currently designed and operated. These requirements, including limits on vacuum and electron back bombardment, are discussed in some detail. Modifications to actual and proposed rf gun designs that would allow these requirements to be met are presented.« less

High-Power Broad-Area Diode Lasers and Laser Bars

NASA Astrophysics Data System (ADS)

Erbert, Goetz; Baerwolff, Arthur; Sebastian, Juergen; Tomm, Jens

This review presents the basic ideas and some examples of the chip technology of high-power diode lasers ( λ= 650,-1060,) in connection with the achievements of mounted single-stripe emitters in recent years.In the first section the optimization of the epitaxial layer structure for a low facet load and high conversion efficiency is discussed. The so-called broadened waveguide Large Optical Cavity (LOC) concept is described and also some advantages and disadvantages of Al-free material. The next section deals with the processing steps of epitaxial wafers to make single emitters and bars. Several possibilities to realize contact windows (implantation, insulators, and wet chemical oxidation) and laser mirrors are presented. The impact of heating in the CW regime and some aspects of reliability are the following topics. The calculation of thermal distributions in diode lasers, which shows the need for sophisticated mounting, will be given. In the last part the current state-of-the-art of single-stripe emitters will be reviewed.

Characterization of fluorescence in heat-treated silver-exchanged zeolites.

PubMed

De Cremer, Gert; Coutiño-Gonzalez, Eduardo; Roeffaers, Maarten B J; Moens, Bart; Ollevier, Jeroen; Van der Auweraer, Mark; Schoonheydt, Robert; Jacobs, Pierre A; De Schryver, Frans C; Hofkens, Johan; De Vos, Dirk E; Sels, Bert F; Vosch, Tom

2009-03-04

Thermal treatment of Ag(+)-exchanged zeolites yields discrete highly photostable luminescent clusters without formation of metallic nanoparticles. Different types of emitters with characteristic luminescence colors are observed, depending on the nature of the cocation, the amount of exchanged silver, and the host topology. The dominant emission bands in LTA samples are situated around 550 and 690 nm for the samples with, respectively, low and high silver content, while in FAU-type materials only a broad band around 550 nm is observed, regardless of the degree of exchange. Analysis of the fluorescent properties in combination with ESR spectroscopy suggests that a Ag(6)(+) cluster with doublet electronic ground state is associated with the appearance of the 690-nm emitter, having a decay of a few hundred microseconds. Tentatively, the nanosecond-decaying 550-nm emitter is assigned to the Ag(3)(+) cluster. This new class of photostable luminescent particles with tunable emission colors offers interesting perspectives for various applications such as biocompatible labels for intracellular imaging.

Quantification of Material Fluorescence and Light Scattering Cross Sections Using Ratiometric Bandwidth-Varied Polarized Resonance Synchronous Spectroscopy.

PubMed

Xu, Joanna Xiuzhu; Hu, Juan; Zhang, Dongmao

2018-05-25

Presented herein is the ratiometric bandwidth-varied polarized resonance synchronous spectroscopy (BVPRS2) method for quantification of material optical activity spectra. These include the sample light absorption and scattering cross-section spectrum, the scattering depolarization spectrum, and the fluorescence emission cross-section and depolarization spectrum in the wavelength region where the sample both absorbs and emits. This ratiometric BVPRS2 spectroscopic method is a self-contained technique capable of quantitatively decoupling material fluorescence and light scattering signal contribution to its ratiometric BVPRS2 spectra through the linear curve-fitting of the ratiometric BVPRS2 signal as a function of the wavelength bandwidth used in the PRS2 measurements. Example applications of this new spectroscopic method are demonstrated with materials that can be approximated as pure scatterers, simultaneous photon absorbers/emitters, simultaneous photon absorbers/scatterers, and finally simultaneous photon absorbers/scatterers/emitters. Because the only instruments needed for this ratiometric BVPRS2 technique are the conventional UV-vis spectrophotometer and spectrofluorometer, this work should open doors for routine decomposition of material UV-vis extinction spectrum into its absorption and scattering component spectra. The methodology and insights provided in this work should be of broad significance to all chemical research that involves photon/matter interactions.

Mie-Metamaterials-Based Thermal Emitter for Near-Field Thermophotovoltaic Systems

PubMed Central

Tian, Yanpei; Zhang, Sinong; Cui, Yali; Zheng, Yi

2017-01-01

In this work, we theoretically analyze the performance characteristics of a near-field thermophotovoltaic system consisting a Mie-metamaterial emitter and GaSb-based photovoltaic cell at separations less than the thermal wavelength. The emitter consists of a tungsten nanoparticle-embedded thin film of SiO2 deposited on bulk tungsten. Numerical results presented here are obtained using formulae derived from dyadic Green’s function formalism and Maxwell-Garnett-Mie theory. We show that via the inclusion of tungsten nanoparticles, the thin layer of SiO2 acts like an effective medium that enhances selective radiative heat transfer for the photons above the band gap of GaSb. We analyze thermophotovoltaic (TPV) performance for various volume fractions of tungsten nanoparticles and thicknesses of SiO2. PMID:28773241

Fused Silica Surface Coating for a Flexible Silica Mat Insulation System

NASA Technical Reports Server (NTRS)

Rhodes, W. H.

1973-01-01

Fused silica insulation coatings have been developed for application to a flexible mat insulation system. Based on crystalline phase nucleation and growth kinetics, a 99+% SiO2 glass was selected as the base composition. A coating was developed that incorporated the high emissivity phase NiCr2O4 as a two phase coating with goals of high emittance and minimum change in thermal expansion. A second major coating classification has a plasma sprayed emittance coating over a sealed pure amorphous SiO2 layer. A third area of development centered on extremely thin amorphous SiO2 coatings deposited by chemical vapor deposition. The coating characterization studies presented are mechanical testing of thin specimens extracted from the coatings, cyclic arc exposures, and emittance measurements before and after arc exposures.

A compact time reversal emitter-receiver based on a leaky random cavity

PubMed Central

Luong, Trung-Dung; Hies, Thomas; Ohl, Claus-Dieter

2016-01-01

Time reversal acoustics (TRA) has gained widespread applications for communication and measurements. In general, a scattering medium in combination with multiple transducers is needed to achieve a sufficiently large acoustical aperture. In this paper, we report an implementation for a cost-effective and compact time reversal emitter-receiver driven by a single piezoelectric element. It is based on a leaky cavity with random 3-dimensional printed surfaces. The random surfaces greatly increase the spatio-temporal focusing quality as compared to flat surfaces and allow the focus of an acoustic beam to be steered over an angle of 41°. We also demonstrate its potential use as a scanner by embedding a receiver to detect an object from its backscatter without moving the TRA emitter. PMID:27811957

Near atomically smooth alkali antimonide photocathode thin films

DOE PAGES

Feng, Jun; Karkare, Siddharth; Nasiatka, James; ...

2017-01-24

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. Here, we calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

Near atomically smooth alkali antimonide photocathode thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Jun; Karkare, Siddharth; Nasiatka, James

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. Here, we calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Nath, Digbijoy N.

We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm{sup 2}. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.

Controlling the angular radiation of single emitters using dielectric patch nanoantennas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yuanqing; Li, Qiang; Qiu, Min, E-mail: minqiu@zju.edu.cn

2015-07-20

Dielectric nanoantennas have generated much interest in recent years owing to their low loss and optically induced electric and magnetic resonances. In this paper, we investigate the coupling between a single emitter and dielectric patch nanoantennas. For the coupled system involving non-spherical structures, analytical Mie theory is no longer applicable. A semi-analytical model is proposed instead to interpret the coupling mechanism and the radiation characteristics of the system. Based on the presented model, we demonstrate that the angular emission of the single emitter can be not only enhanced but also rotated using the dielectric patch nanoantennas.

Detailed Modeling of Physical Processes in Electron Sources for Accelerator Applications

NASA Astrophysics Data System (ADS)

Chubenko, Oksana; Afanasev, Andrei

2017-01-01

At present, electron sources are essential in a wide range of applications - from common technical use to exploring the nature of matter. Depending on the application requirements, different methods and materials are used to generate electrons. State-of-the-art accelerator applications set a number of often-conflicting requirements for electron sources (e.g., quantum efficiency vs. polarization, current density vs. lifetime, etc). Development of advanced electron sources includes modeling and design of cathodes, material growth, fabrication of cathodes, and cathode testing. The detailed simulation and modeling of physical processes is required in order to shed light on the exact mechanisms of electron emission and to develop new-generation electron sources with optimized efficiency. The purpose of the present work is to study physical processes in advanced electron sources and develop scientific tools, which could be used to predict electron emission from novel nano-structured materials. In particular, the area of interest includes bulk/superlattice gallium arsenide (bulk/SL GaAs) photo-emitters and nitrogen-incorporated ultrananocrystalline diamond ((N)UNCD) photo/field-emitters. Work supported by The George Washington University and Euclid TechLabs LLC.

Overcoming the Fundamental Bottlenecks to a new world-record silicon solar cell. Final Technical Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rohatgi, Ajeet; Zimbardi, Francesco; Rounsaville, Brian

The objective of the work performed within this contract is to reveal the materials and device physics that currently limit the experimental world record efficiency to 25% for single junction Si (2013), and to demonstrate 26.5% efficiency. The starting efficiency for this project was 23.9% in 2013. Four strategies are being combined throughout the project to achieve 26.5% cell efficiency: (1) passivated contacts via tunnel dielectrics, (2) emitter optimization and passivation through dopant profile engineering, (3) enhanced light trapping through development of photonic crystals and (4) base optimization.

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

NASA Technical Reports Server (NTRS)

Fonash, S. J.; Sigh, R.; Mu, H. C.

1986-01-01

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

Hybrid systems of AlInP microdisks and colloidal CdSe nanocrystals showing whispering-gallery modes at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strelow, Christian; Weising, Simon; Bonatz, Dennis

2014-09-01

We report on the realization of hybrid systems composed of passive optical microdisk resonators prepared from epitaxial layer systems and nanocrystal quantum emitters synthesized by colloidal chemistry. The AlInP disk material allows for the operation in the visible range, as probed by CdSe-based nanocrystals. Photoluminescence spectra at room temperature reveal sets of whispering-gallery modes consistent with finite-difference time-domain simulations. In the experiments, a special sample geometry renders it possible to detect resonant optical modes perpendicular to the disk plane.

Benzobisoxazole cruciforms: A tunable, cross-conjugated platform for the generation of deep blue OLED materials

DOE PAGES

Chavez, III, Ramiro; Cai, Min; Tlach, Brian; ...

2016-01-20

Four new cross-conjugated small molecules based on a central benzo[1,2-d:4,5-d']bisoxazole moiety possessing semi-independently tunable HOMO and LUMO levels were synthesized and the properties of these materials were evaluated experimentally and theoretically. The molecules were thermally stable with 5% weight loss occurring well above 350 °C. The cruciforms all exhibited blue emission in solution ranging from 433–450 nm. Host–guest OLEDs fabricated from various concentrations of these materials using the small molecule host 4,4'-bis(9-carbazolyl)-biphenyl (CBP) exhibited deep blue-emission with Commission Internationale de L'Eclairage (CIE) coordinates of (0.15 ≤ x ≤ 0.17, 0.05 ≤ y ≤ 0.11), and maximum luminance efficiencies as highmore » as ~2 cd A–1. Lastly, these results demonstrate the potential of benzobisoxazole cruciforms as emitters for developing high-performance deep blue OLEDs.« less

Optimal design study of high efficiency indium phosphide space solar cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Recently indium phosphide solar cells have achieved beginning of life AMO efficiencies in excess of 19 pct. at 25 C. The high efficiency prospects along with superb radiation tolerance make indium phosphide a leading material for space power requirements. To achieve cost effectiveness, practical cell efficiencies have to be raised to near theoretical limits and thin film indium phosphide cells need to be developed. The optimal design study is described of high efficiency indium phosphide solar cells for space power applications using the PC-1D computer program. It is shown that cells with efficiencies over 22 pct. AMO at 25 C could be fabricated by achieving proper material and process parameters. It is observed that further improvements in cell material and process parameters could lead to experimental cell efficiencies near theoretical limits. The effect of various emitter and base parameters on cell performance was studied.

Study of relationships of material properties and high efficiency solar cell performance on material composition

NASA Technical Reports Server (NTRS)

Sah, C. T.

1983-01-01

The performance improvements obtainable from extending the traditionally thin back-surface-field (BSF) layer deep into the base of silicon solar cells under terrestrial solar illumination (AM1) are analyzed. This extended BSF cell is also known as the back-drift-field cell. About 100 silicon cells were analyzed, each with a different emitter or base dopant impurity distribution whose selection was based on physically anticipated improvements. The four principal performance parameters (the open-circuit voltage, the short-circuit current, the fill factor, and the maximum efficiency) are computed using a FORTRAN program, called Circuit Technique for Semiconductor-device Analysis, CTSA, which numerically solves the six Shockley Equations under AM1 solar illumination at 88.92 mW/cm, at an optimum cell thickness of 50 um. The results show that very significant performance improvements can be realized by extending the BSF layer thickness from 2 um (18% efficiency) to 40 um (20% efficiency).

Optimal antibunching in passive photonic devices based on coupled nonlinear resonators

NASA Astrophysics Data System (ADS)

Ferretti, S.; Savona, V.; Gerace, D.

2013-02-01

We propose the use of weakly nonlinear passive materials for prospective applications in integrated quantum photonics. It is shown that strong enhancement of native optical nonlinearities by electromagnetic field confinement in photonic crystal resonators can lead to single-photon generation only exploiting the quantum interference of two coupled modes and the effect of photon blockade under resonant coherent driving. For realistic system parameters in state of the art microcavities, the efficiency of such a single-photon source is theoretically characterized by means of the second-order correlation function at zero-time delay as the main figure of merit, where major sources of loss and decoherence are taken into account within a standard master equation treatment. These results could stimulate the realization of integrated quantum photonic devices based on non-resonant material media, fully integrable with current semiconductor technology and matching the relevant telecom band operational wavelengths, as an alternative to single-photon nonlinear devices based on cavity quantum electrodynamics with artificial atoms or single atomic-like emitters.

Future Synchrotron Light Sources Based on Ultimate Storage Rings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Yunhai; /SLAC

2012-04-09

The main purpose of this talk is to describe how far one might push the state of the art in storage ring design. The talk will start with an overview of the latest developments and advances in the design of synchrotron light sources based on the concept of an 'ultimate' storage ring. The review will establish how bright a ring based light source might be, where the frontier of technological challenges are, and what the limits of accelerator physics are. Emphasis will be given to possible improvements in accelerator design and developments in technology toward the goal of achieving anmore » ultimate storage ring. An ultimate storage ring (USR), defined as an electron ring-based light source having an emittance in both transverse planes at the diffraction limit for the range of X-ray wavelengths of interest for a scientific community, would provide very high brightness photons having high transverse coherence that would extend the capabilities of X-ray imaging and probe techniques beyond today's performance. It would be a cost-effective, high-coherence 4th generation light source, competitive with one based on energy recovery linac (ERL) technology, serving a large number of users studying material, chemical, and biological sciences. Furthermore, because of the experience accumulated over many decades of ring operation, it would have the great advantage of stability and reliability. In this paper we consider the design of an USR having 10-pm-rad emittance. It is a tremendous challenge to design a storage ring having such an extremely low emittance, a factor of 100 smaller than those in existing light sources, especially such that it has adequate dynamic aperture and beam lifetime. In many ultra-low emittance designs, the injection acceptances are not large enough for accumulation of the electron beam, necessitating on-axis injection where stored electron bunches are completely replaced with newly injected ones. Recently, starting with the MAX-IV 7-bend achromatic cell, we have made significant progress with the design of PEP-X, a USR that would inhabit the decommissioned PEP-II tunnel at SLAC. The enlargement of the dynamic aperture is largely a result of the cancellations of the 4th-order resonances in the 3rd-order achromats and the effective use of lattice optimization programs. In this paper, we will show those cancellations of the 4th-order resonances using an analytical approach based on the exponential Lie operators and the Poisson brackets. Wherever possible, our analytical results will be compared with their numerical counterparts. Using the derived formulae, we will construct 4th-order geometric achromats and use them as modules for the lattice of the PEP-X USR, noting that only geometric terms are canceled to the 4th order.« less

Emitter and absorber assembly for multiple self-dual operation and directional transparency

NASA Astrophysics Data System (ADS)

Kalozoumis, P. A.; Morfonios, C. V.; Kodaxis, G.; Diakonos, F. K.; Schmelcher, P.

2017-03-01

We demonstrate how to systematically design wave scattering systems with simultaneous coherent perfect absorbing and lasing operation at multiple and prescribed frequencies. The approach is based on the recursive assembly of non-Hermitian emitter and absorber units into self-dual emitter-absorber trimers at different composition levels, exploiting the simple structure of the corresponding transfer matrices. In particular, lifting the restriction to parity-time-symmetric setups enables the realization of emitter and absorber action at distinct frequencies and provides flexibility with respect to the choice of realistic parameters. We further show how the same assembled scatterers can be rearranged to produce unidirectional and bidirectional transparency at the selected frequencies. With the design procedure being generically applicable to wave scattering in single-channel settings, we demonstrate it with concrete examples of photonic multilayer setups.

Photophysics of GaN single-photon emitters in the visible spectral range

NASA Astrophysics Data System (ADS)

Berhane, Amanuel M.; Jeong, Kwang-Yong; Bradac, Carlo; Walsh, Michael; Englund, Dirk; Toth, Milos; Aharonovich, Igor

2018-04-01

In this work, we present a detailed photophysical analysis of recently discovered, optically stable single-photon emitters (SPEs) in gallium nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited width expected from excited-state lifetime measurements. The broadening is ascribed to ultrafast spectral diffusion. The photophysical study on several emitters at room temperature (RT) reveals an average brightness of (427 ±215 )kCounts /s . Finally, polarization measurements from 14 emitters are used to determine visibility as well as dipole orientation of defect systems within the GaN crystal. Our results underpin some of the fundamental properties of SPEs in GaN both at cryogenic and RT, and define the benchmark for future work in GaN-based single-photon technologies.

Intrinsic delay of permeable base transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Wenchao; Guo, Jing; So, Franky

2014-07-28

Permeable base transistors (PBTs) fabricated by vacuum deposition or solution process have the advantages of easy fabrication and low power operation and are a promising device structure for flexible electronics. Intrinsic delay of PBT, which characterizes the speed of the transistor, is investigated by solving the three-dimensional Poisson equation and drift-diffusion equation self-consistently using finite element method. Decreasing the emitter thickness lowers the intrinsic delay by improving on-current, and a thinner base is also preferred for low intrinsic delay because of fewer carriers in the base region at off-state. The intrinsic delay exponentially decreases as the emitter contact Schottky barriermore » height decreases, and it linearly depends on the carrier mobility. With an optimized emitter contact barrier height and device geometry, a sub-nano-second intrinsic delay can be achieved with a carrier mobility of ∼10 cm{sup 2}/V/s obtainable in solution processed indium gallium zinc oxide, which indicates the potential of solution processed PBTs for GHz operations.« less

Optimized thermal amplification in a radiative transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prod'homme, Hugo; Ordonez-Miranda, Jose; Ezzahri, Younes, E-mail: younes.ezzahri@univ-poitiers.fr

The thermal performance of a far-field radiative transistor made up of a VO{sub 2} base in between a blackbody collector and a blackbody emitter is theoretically studied and optimized. This is done by using the grey approximation on the emissivity of VO{sub 2} and deriving analytical expressions for the involved heat fluxes and transistor amplification factor. It is shown that this amplification factor can be maximized by tuning the base temperature close to its critical one, which is determined by the temperature derivative of the VO{sub 2} emissivity and the equilibrium temperatures of the collector and emitter. This maximization ismore » the result of the presence of two bi-stable temperatures appearing during the heating and cooling processes of the VO{sub 2} base and enables a thermal switching (temperature jump) characterized by a sizeable variation of the collector-to-base and base-to-emitter heat fluxes associated with a slight change of the applied power to the base. This switching effect leads to the optimization of the amplification factor and therefore it could be used for thermal modulation purposes.« less

Development of a Robust, High Current, Low Power Field Emission Electron Gun for a Spaceflight Reflectron Time-of-Flight Mass Spectrometer

NASA Technical Reports Server (NTRS)

Southard, Adrian E.; Getty, Stephanie A.; Feng, Steven; Glavin, Daniel P.; Auciello, Orlando; Sumant, Anirudha

2012-01-01

Carbon materials, including carbon nanotubes (CNTs) and nitrogen-incorporated ultrananocrystalline diamond (N-UNCD), have been of considerable interest for field emission applications for over a decade. In particular, robust field emission materials are compelling for space applications due to the low power consumption and potential for miniaturization. A reflectron time-of-flight mass spectrometer (TOF-MS) under development for in situ measurements on the Moon and other Solar System bodies uses a field emitter to generate ions from gaseous samples, using electron ionization. For these unusual environments, robustness, reliability, and long life are of paramount importance, and to this end, we have explored the field emission properties and lifetime of carbon nanotubes and nitrogen-incorporated ultrananocrystalline diamond (N-UNCD) thin films, the latter developed and patented by Argonne National Laboratory. We will present recent investigations of N-UNCD as a robust field emitter, revealing that this material offers stable performance in high vacuum for up to 1000 hours with threshold voltage for emission of about 3-4 V/lJm and current densities in the range of tens of microA. Optimizing the mass resolution and sensitivity of such a mass spectrometer has also been enabled by a parallel effort to scale up a CNT emitter to an array measuring 2 mm x 40 mm. Through simulation and experiment of the new extended format emitter, we have determined that focusing the electron beam is limited due to the angular spread of the emitted electrons. This dispersion effect can be reduced through modification of the electron gun geometry, but this reduces the current reaching the ionization region. By increasing the transmission efficiency of the electron beam to the anode, we have increased the anode current by two orders of magnitude to realize a corresponding enhancement in instrument sensitivity, at a moderate cost to mass resolution. We will report recent experimental and modeling results to describe the performance of a field emission electron gun as employed in the Volatile Analysis by Pyrolysis of Regolith (VAPoR) TOF-MS prototype.

Design and fabrication of spectrally selective emitter for thermophotovoltaic system by using nano-imprint lithography

NASA Astrophysics Data System (ADS)

Kim, Jong-Moo; Park, Keum-Hwan; Kim, Da-Som; Hwang, Bo-yeon; Kim, Sun-Kyung; Chae, Hee-Man; Ju, Byeong-Kwon; Kim, Young-Seok

2018-01-01

Thermophotovoltaic (TPV) systems have attracted attention as promising power generation systems that can directly convert the radiant energy produced by the combustion of fuel into electrical energy. However, there is a fundamental limit of their conversion efficiency due to the broadband distribution of the radiant spectrum. To overcome this problem, several spectrally selective thermal emitter technologies have been investigated, including the fabrication of photonic crystal (PhC) structures. In this paper, we present some design rules based on finite-a difference time-domain (FDTD) simulation results for tungsten (W) PhC emitter. The W 2D PhC was fabricated by a simple nano-imprint lithography (NIL) process, and inductive coupled plasma reactive ion etching (ICP-RIE) with an isotropic etching process, the benefits and parameters of which are presented. The fabricated W PhC emitter showed spectrally selective emission near the infrared wavelength range, and the optical properties varied depending on the size of the nano-patterns. The measured results of the fabricated prototype structure correspond well to the simulated values. Finally, compared with the performance of a flat W emitter, the total thermal emitter efficiency was almost 3.25 times better with the 2D W PhC structure.

Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics.

PubMed

Kittler, M; Yu, X; Mchedlidze, T; Arguirov, T; Vyvenko, O F; Seifert, W; Reiche, M; Wilhelm, T; Seibt, M; Voss, O; Wolff, A; Fritzsche, W

2007-06-01

Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.

High-Performance THz Emitters Based on Ferromagnetic/Nonmagnetic Heterostructures.

PubMed

Wu, Yang; Elyasi, Mehrdad; Qiu, Xuepeng; Chen, Mengji; Liu, Yang; Ke, Lin; Yang, Hyunsoo

2017-01-01

A low-cost, intense, broadband, noise resistive, magnetic field controllable, flexible, and low power driven THz emitter based on thin nonmagnetic/ferromagnetic metallic heterostructures is demonstrated. The THz emission origins from the inverse spin Hall Effect. The proposed devices are not only promising for a wide range of THz equipment, but also offer an alternative approach to characterize the spin-orbit interaction in nonmagnetic/ferromagnetic bilayers. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Interconnection network architectures based on integrated orbital angular momentum emitters

NASA Astrophysics Data System (ADS)

Scaffardi, Mirco; Zhang, Ning; Malik, Muhammad Nouman; Lazzeri, Emma; Klitis, Charalambos; Lavery, Martin; Sorel, Marc; Bogoni, Antonella

2018-02-01

Novel architectures for two-layer interconnection networks based on concentric OAM emitters are presented. A scalability analysis is done in terms of devices characteristics, power budget and optical signal to noise ratio by exploiting experimentally measured parameters. The analysis shows that by exploiting optical amplifications, the proposed interconnection networks can support a number of ports higher than 100. The OAM crosstalk induced-penalty, evaluated through an experimental characterization, do not significantly affect the interconnection network performance.

Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

NASA Technical Reports Server (NTRS)

Ponchak, George E. (Technical Monitor); Bhattacharya, Pallab

2003-01-01

Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

Spindt cold cathode electron gun development program

NASA Technical Reports Server (NTRS)

Spindt, C. A.

1983-01-01

A thin film field emission cathode array and an electron gun based on this emitter array are summarized. Fabricating state of the art cathodes for testing at NASA and NRL, advancing the fabrication technology, developing wedge shaped emitters, and performing emission tests are covered. An anistropic dry etching process (reactive ion beam etching) developed that leads to increasing the packing density of the emitter tips to about 5 x 10 to the 6th power/square cm. Tests with small arrays of emitter tips having about 10 tips has demonstrated current densities of over 100 A/sq cm. Several times using cathodes having a packing density of 1.25 x 10 to the 6th power tips/sq cm. Indications are that the higher packing density achievable with the dry etch process may extend this capability to the 500 A/sq cm range and beyond. The wedge emitter geometry was developed and shown to produce emission. This geometry can (in principle) extend the current density capability of the cathodes beyond the 500 A/sq cm level. An emission microscope was built and tested for use with the cathodes.

Thermal Technology Development Activities at the Goddard Space Flight Center - 2001

NASA Technical Reports Server (NTRS)

Butler, Dan

2002-01-01

This presentation provides an overview of thermal technology development activities carried out at NASA's Goddard Space Flight Center during 2001. Specific topics covered include: two-phase systems (heat pipes, capillary pumped loops, vapor compression systems and phase change materials), variable emittance systems, advanced coatings, high conductivity materials and electrohydrodynamic (EHD) thermal coatings. The application of these activities to specific space missions is also discussed.

Shuttle orbiter TPS flight repair kit development

NASA Technical Reports Server (NTRS)

1979-01-01

The design and application of a TPS repair kit is presented. The repair kit is designed for on orbit use by a crew member working in the manned maneuvering unit (MMU). The kit includes the necessary equipment and materials to accomplish the repair tasks which include the following: HRSI emittance coating repair, damaged tile repair, missing tile repair, and multiple tile repair. Two types of repair materials required to do the small area repair and the large area repair are described. The materials area cure in place, silicone base ablator for small damaged areas and precured ablator tile for repair of larger damaged areas is examined. The cure in place ablator is also used as an adhesive to bond the precured tiles in place. An applicator for the cure in place ablator, designed to contain a two-part silicon compound, mix the two components at correct ratio, and dispense the materials at rates compatible with mission timelines established for the EVA is described.

Lanthanum hexaboride for solar energy applications.

PubMed

Sani, Elisa; Mercatelli, Luca; Meucci, Marco; Zoli, Luca; Sciti, Diletta

2017-04-06

We investigate the optical properties of LaB 6 - based materials, as possible candidates for solid absorbers in Concentrating Solar Power (CSP) systems. Bulk LaB 6 materials were thermally consolidated by hot pressing starting from commercial powders. To assess the solar absorbance and spectral selectivity properties, room-temperature hemispherical reflectance spectra were measured from the ultraviolet to the mid-infrared, considering different compositions, porosities and surface roughnesses. Thermal emittance at around 1100 K has been measured. Experimental results showed that LaB 6 can have a solar absorbance comparable to that of the most advanced solar absorber material in actual plants such as Silicon Carbide, with a higher spectral selectivity. Moreover, LaB 6 has also the appealing characteristics to be a thermionic material, so that it could act at the same time both as direct high-temperature solar absorber and as electron source, significantly reducing system complexity in future concentrating solar thermionic systems and bringing a real innovation in this field.

MicroSPE-nanoLC-ESI-MS/MS Using 10-μm-i.d. Silica-Based Monolithic Columns for Proteomics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Quanzhou; Page, Jason S.; Tang, Keqi

2007-01-01

Silica-based monolithic narrow bore capillary columns (25 cm x 10 µm i.d.) with an integrated nanoESI emitter has been developed to provide high quality and robust microSPE-nanoLC-ESI-MS analyses. The integrated nanoESI emitter adds no dead volume to the LC separation, allowing stable electrospray performance to be obtained at flow rates of ~10 nL/min. In an initial application we identified 5510 unique peptides covering 1443 distinct Shewanella oneidensis proteins from a 300 ng tryptic digest sample in a single 4-h LC-MS/MS analysis using a linear ion trap MS (LTQ). We found the use of an integrated monolithic ESI emitter provided enhancedmore » resistance to clogging and good run-to-run reproducibility.« less

Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

DOEpatents

Wang, Daojing [Daly City, CA; Yang, Peidong [Kensington, CA; Kim, Woong [Seoul, KR; Fan, Rong [Pasadena, CA

2011-09-20

Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

Asymmetrical field emitter

DOEpatents

Fleming, J.G.; Smith, B.K.

1995-10-10

A method is disclosed for providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure. 17 figs.

Cesium-diode performances from the 1963-to-1971 Thermionic Conversion Specialist Conferences

NASA Technical Reports Server (NTRS)

Morris, J. F.

1972-01-01

Indexes and summaries of the conference papers containing cesium-diode results are presented. Lists of converter materials, geometries, conditions, outputs, and lifetimes accompany the references. Simple chemical designations for emitters, collectors, and additives direct the reader to appropriate selections.

Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond

DOEpatents

Sumant, Anirudha V.; Baryshev, Sergey V.; Antipov, Sergey P.

2016-08-16

A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

Planar Field Emitters and High Efficiency Photocathodes Based on Ultrananocrystalline Diamond

NASA Technical Reports Server (NTRS)

Sumant, Anirudha V. (Inventor); Baryshev, Sergey V. (Inventor); Antipov, Sergey P. (Inventor)

2016-01-01

A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

High current gain transistor laser

PubMed Central

Liang, Song; Qiao, Lijun; Zhu, Hongliang; Wang, Wei

2016-01-01

A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitter ridge. Numerical studies show that a current flow aperture for only holes can be formed in the center of the emitter ridge. As a result, the common emitter current gain can be as large as 143.3, which is over 15 times larger than that of a TL without the aperture. Besides, the effects of nonradiative recombination defects can be reduced greatly because the flow of holes is confined in the center region of the emitter ridge. PMID:27282466

Deep-UV Emitters and Detectors Based on Lattice-Matched Cubic Oxide Semiconductors (4.2 Optoelectronics)

DTIC Science & Technology

2015-05-14

calculated   by   dividing   photo-­‐‑ generated  current  by  the  optical  power  spectrum  of  the   lamp .    A   UV ...the optimized parameters for growth. Efforts led to significant increases in solar?blind detector responsivity (up to 0.1 A/W) with sub-­ nanoamp...Aug-2014 Approved for Public Release; Distribution Unlimited Final Report: Deep- UV Emitters and Detectors Based on Lattice- Matched Cubic Oxide

Recent progress of carbon nanotube field emitters and their application.

PubMed

Seelaboyina, Raghunandan; Choi, Wonbong

2007-01-01

The potential of utilizing carbon nanotube field emission properties is an attractive feature for future vacuum electronic devices including: high power microwave, miniature x-ray, backlight for liquid crystal displays and flat panel displays. Their high emission current, nano scale geometry, chemical inertness and low threshold voltage for emission are attractive features for the field emission applications. In this paper we review the recent developments of carbon nanotube field emitters and their device applications. We also discuss the latest results on field emission current amplification achieved with an electron multiplier microchannel plate, and emission performance of multistage field emitter based on oxide nanowire operated in poor vacuum.

Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure

NASA Technical Reports Server (NTRS)

Das, Kalyan; Hall, Harvey

1999-01-01

Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance

DTIC Science & Technology

2017-02-01

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance (Invited paper) Christine A...epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on QCL operation, and establishing correlations between epitaxial growth and materials...QCLs emitting in this range. Index terms – Quantum cascade lasers, semiconductor growth, semiconductor epitaxial layers, infrared emitters. I

Solution-processable red-emission organic materials containing triphenylamine and benzothiodiazole units: synthesis and applications in organic light-emitting diodes.

PubMed

Yang, Yi; Zhou, Yi; He, Qingguo; He, Chang; Yang, Chunhe; Bai, Fenglian; Li, Yongfang

2009-06-04

Three solution-processable red-emissive organic materials with a hole-transporting unit triphenylamine (TPA) as the core part and a D-pi-A bipolar structure as the branch part, TPA-BT (single-branched molecule), b-TPA-BT (bibranched molecule), and t-TPA-BT (tribranched molecule), were synthesized by the Heck coupling reaction. Herein, for the D-pi-A push-pull structure, we use TPA as the electron donor, benzothiodiazole (BT) as the electron acceptor, and the vinylene bond as the pi-bridge connecting the TPA and BT units. The compounds exhibit good solubility in common organic solvents, benefited from the three-dimensional spatial configuration of TPA units and the branch structure of the molecules. TPA-BT, b-TPA-BT, and t-TPA-BT show excellent photoluminescent properties with maximum emission peaks at ca. 630 nm. High-performance red-emission organic light-emitting diodes (OLEDs) were fabricated with the active layer spin coated from a solution of these compounds. The OLED based on TPA-BT displayed a low turn-on voltage of 2.0 V, a maximum luminance of 12192 cd/m2, and a maximum current efficiency of 1.66 cd/A, which is among the highest values for the solution-processed red-emission OLEDs. In addition, high-performance white-light-emitting diodes (WLEDs) with maximum luminance around 4400 cd/m2 and maximum current efficiencies above 4.5 cd/A were realized by separately doping the three TPA-BT-containing molecules as red emitter and poly(6,6'-bi-(9,9'-dihexylfluorene)- co-(9,9'-dihexylfluorene-3-thiophene-5'-yl)) as green emitter into blue poly(9,9-dioctylfluorene-2,7-diyl) host material with suitable weight ratios.

Work function and surface stability of tungsten-based thermionic electron emission cathodes

NASA Astrophysics Data System (ADS)

Jacobs, Ryan; Morgan, Dane; Booske, John

2017-11-01

Materials that exhibit a low work function and therefore easily emit electrons into vacuum form the basis of electronic devices used in applications ranging from satellite communications to thermionic energy conversion. W-Ba-O is the canonical materials system that functions as the thermionic electron emitter commercially used in a range of high-power electron devices. However, the work functions, surface stability, and kinetic characteristics of a polycrystalline W emitter surface are still not well understood or characterized. In this study, we examined the work function and surface stability of the eight lowest index surfaces of the W-Ba-O system using density functional theory methods. We found that under the typical thermionic cathode operating conditions of high temperature and low oxygen partial pressure, the most stable surface adsorbates are Ba-O species with compositions in the range of Ba0.125O-Ba0.25O per surface W atom, with O passivating all dangling W bonds and Ba creating work function-lowering surface dipoles. Wulff construction analysis reveals that the presence of O and Ba significantly alters the surface energetics and changes the proportions of surface facets present under equilibrium conditions. Analysis of previously published data on W sintering kinetics suggests that fine W particles in the size range of 100-500 nm may be at or near equilibrium during cathode synthesis and thus may exhibit surface orientation fractions well described by the calculated Wulff construction.

Influence of humidity on the initial emittable concentration of formaldehyde and hexaldehyde in building materials: experimental observation and correlation

PubMed Central

Huang, Shaodan; Xiong, Jianyin; Cai, Chaorui; Xu, Wei; Zhang, Yinping

2016-01-01

Humidity is one of the main environmental factors affecting the emission rate and key parameters of formaldehyde and volatile organic compounds (VOCs) from building materials. Meanwhile, the initial emittable concentration (Cm,0) is proved to be the most sensitive key parameter to the emission behaviours. However, there is no report on the relationship between humidity and Cm,0. In this paper, Cm,0 of formaldehyde and hexaldehyde from a type of medium density fiberboard in absolute humidity (AH) range of 4.6–19.6 g/m3 at 25 °C were tested by virtue of a C-history method. Experimental results indicate that Cm,0 is dramatically dependent on AH, increased by 10 and 2 times for formaldehyde and hexaldehyde when AH rising from 4.6 g/m3 to 19.6 g/m3. A linear relationship between the logarithm of Cm,0 and AH is obtained based on the measured results. In addition, a correlation characterizing the association of emission rate and AH is derived. The effectiveness of the correlation is verified with our experimental results as well as data from literature. With the correlations, the Cm,0 or emission rate different from the test AH conditions can be conveniently obtained. This study should be useful for predicting the emission characteristics of humidity changing scenarios and for source control. PMID:27025353

Protection of Conductive and Non-conductive Advanced Polymer-based Paints from Highly Aggressive Oxidative Environments

NASA Technical Reports Server (NTRS)

Gudimenko, Y.; Ng, R.; Iskanderova, Z.; Kleiman, J.; Grigorevsky, A.; Kiseleva, L.; Finckenor, M.; Edwards, D.

2005-01-01

Research has been continued to further improve the space durability of conductive and non-conductive polymer-based paints and of conductive thermal control paints for space applications. Efforts have been made to enhance the space durability and stability of functional Characteristics in ground-based space environment imitating conditions, using specially developed surface modification treatment. The results of surface modification of new conductive paints, including the ground-based testing in aggressive oxidative environments, such as atomic oxygen/UV and oxygen plasma, and performance evaluation are presented. Functional properties and performance characteristics, such as thermal optical properties (differential solar absorptance and thermal emittance representing the thermal optical performance of thermal control paints) and surface resistivity characteristics of pristine, surface modified, and tested materials were verified. Extensive surface analysis studies have been performed using complementary surface analyses including SEM/EDS and XPS. Test results revealed that the successfully treated materials exhibit reduced mass loss and no surface morphology change, thus indicating good protection from the severe oxidative environment. It was demonstrated that the developed surface modification treatment could be applied successfully to charge dissipative and conductive paints.

Single-shot measurements of low emittance beams from laser-plasma accelerators comparing two triggered injection methods

NASA Astrophysics Data System (ADS)

van Tilborg, Jeroen

2017-10-01

The success of laser plasma accelerator (LPA) based applications, such as a compact x-ray free electron laser (FEL), relies on the ability to produce electron beams with excellent 6D brightness, where brightness is defined as the ratio of charge to the product of the three normalized emittances. As such, parametric studies of the emittance of LPA generated electron beams are essential. Profiting from a stable and tunable LPA setup, combined with a carefully designed single-shot energy-dispersed emittance diagnostic, we present a direct comparison of charge dependent emittance measurements of electron beams generated by two different injection mechanisms: ionization injection and shock-induced density down-ramp injection. Both injection mechanisms have gained in popularity in recent years due to their demonstrated stable LPA performance. For the down-ramp injection configuration, normalized emittances a factor of two lower were recorded: less than 1 micron at spectral charge densities up to 2 pC/MeV. For both injection mechanisms, a contributing correlation of space charge to the emittance was identified. This measurement technique in general, and these results specifically, are critical to the evaluation of LPA injection methods and development of high-quality LPA beam lines worldwide. This work is supported by the U.S. DOE under Contract No. DE-AC02-05CH11231, by the U.S. DOE NNSA, DNN R&D (NA22), by the National Science Foundation under Grant No. PHY-1415596, and by the Gordon and Betty Moore Foundation under Grant ID GBMF4898.

Off-axis beam dynamics in rf-gun-based electron photoinjectors

DOE PAGES

Huang, R.; Mitchell, Chad; Papadopoulos, C.; ...

2016-11-22

The need to operate an rf-gun-based electron photoinjector with a beam emitted away from the cathode center can occur under various circumstances. First, in some cases the cathode can be affected by ion back-bombardment that progressively reduces the quantum efficiency (QE) in its center, making off-axis operation mandatory; second, in some cases the drive laser intensity can be sufficiently high to generate QE depletion in the cathode area illuminated by the laser, forcing off-axis operation; last, in cathodes with nonuniform QE distribution it could be convenient to operate off axis to exploit a better QE. However, operation in this modemore » may lead to growth of the projected transverse beam emittances due to correlations between the transverse and longitudinal degrees of freedom that are introduced within the gun and downstream rf cavities. A strategy is described to mitigate this emittance growth by allowing the beam to propagate along a carefully tuned off-axis trajectory in downstream rf cavities to remove the time-dependent rf kicks introduced in the gun. Along this trajectory, short range wakefields do not degrade the emittance, and long range wakefields degrade the emittance for very high repetition rate only.« less

Pure single-photon emission from In(Ga)As QDs in a tunable fiber-based external mirror microcavity

NASA Astrophysics Data System (ADS)

Herzog, T.; Sartison, M.; Kolatschek, S.; Hepp, S.; Bommer, A.; Pauly, C.; Mücklich, F.; Becher, C.; Jetter, M.; Portalupi, S. L.; Michler, P.

2018-07-01

Cavity quantum electrodynamics is widely used in many solid-state systems for improving quantum emitter performances or accessing specific physical regimes. For these purposes it is fundamental that the non-classical emitter, like a quantum dot or an NV center, matches the cavity mode, both spatially and spectrally. In the present work, we couple single photons stemming from In(Ga)As quantum dots into an open fiber-based Fabry–Pérot cavity. Such a system allows for reaching an optimal spatial and spectral matching for every present emitter and every optical transition, by precisely tuning the cavity geometry. In addition to that, the capability of deterministically and repeatedly locating a single quantum dot enables to compare the behavior of the quantum emitter inside the cavity with respect to before it is placed inside. The presented open-cavity system shows full flexibility by precisely tuning in resonance different QD transitions, namely excitons, biexcitons and trions. A measured Purcell enhancement of 4.4 ± 0.5 is obtained with a cavity finesse of about 140, while still demonstrating a single-photon source with vanishing multi-photon emission probability.

Off-axis beam dynamics in rf-gun-based electron photoinjectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, R.; Mitchell, Chad; Papadopoulos, C.

The need to operate an rf-gun-based electron photoinjector with a beam emitted away from the cathode center can occur under various circumstances. First, in some cases the cathode can be affected by ion back-bombardment that progressively reduces the quantum efficiency (QE) in its center, making off-axis operation mandatory; second, in some cases the drive laser intensity can be sufficiently high to generate QE depletion in the cathode area illuminated by the laser, forcing off-axis operation; last, in cathodes with nonuniform QE distribution it could be convenient to operate off axis to exploit a better QE. However, operation in this modemore » may lead to growth of the projected transverse beam emittances due to correlations between the transverse and longitudinal degrees of freedom that are introduced within the gun and downstream rf cavities. A strategy is described to mitigate this emittance growth by allowing the beam to propagate along a carefully tuned off-axis trajectory in downstream rf cavities to remove the time-dependent rf kicks introduced in the gun. Along this trajectory, short range wakefields do not degrade the emittance, and long range wakefields degrade the emittance for very high repetition rate only.« less

Probing the emitter site of Renilla luciferase using small organic molecules; an attempt to understand the molecular architecture of the emitter site.

PubMed

Salehi, Farajollah; Emamzadeh, Rahman; Nazari, Mahboobeh; Rasa, Seyed Mohammad Mahdi

2016-12-01

Renilla luciferase is a sensitive enzyme and has wide applications in biotechnology such as drug screening. Previous studies have tried to show the catalytic residues, nevertheless, the accurate architecture and molecular behavior of its emitter site remains uncharacterized. In this study, the activity of Renilla luciferase, in the presence of two small organic molecules including dimethyl sulfoxide (DMSO) and isopropanol was considered and the structure was studied by circular dichroism (CD) and fluorescence spectroscopy. Moreover, the interaction of small organic molecules with the Renilla luciferase was studied using molecular dynamics simulations. Kinetics studies showed that at low concentration of DMSO (16.6-66mM) and isopropanol (19.3-76mM) the K m changed and a competitive inhibition pattern was observed. Moreover, spectroscopy studies reveled that the changes of activity of Renilla luciferase in the presence of low concentrations of small organic molecules was not associated with structural collapse or severe changes in the enzyme conformation. Molecular dynamics simulations indicated that DMSO and isopropanol, as probing molecules, were both able to bind to the emitter site and remained with the residues of the emitter site. Based on the probing data, the architecture of the emitter site in the "non-binding" model was proposed. Copyright © 2016 Elsevier B.V. All rights reserved.

Field nanoemitter: One-dimension Al4C3 ceramics

NASA Astrophysics Data System (ADS)

Sun, Y.; Cui, H.; Gong, L.; Chen, Jian; Shen, P. K.; Wang, C. X.

2011-07-01

As a kind of ionic (or salt-like) carbide, Al4C3 hardly any active functions have been found except for structure material purposes. However, considering the unique characteristic features of its crystal structure, we think Al4C3 in fact might have huge potential for exhibiting active functionality on field-emission application. Herein, we report for the first time the catalyst-free synthesis and excellent field emission properties of Al4C3 one-dimension (1-D) nanostructures. The 1-D nanostructures acting as cold electron emitters display excellent field emission performance with the turn-on field as low as 1.4-2.0 V μm-1 and the threshold field down to 4.2-4.4 V μm-1. Such emitters are technologically useful, because they can be easily fabricated on large substrates, and the synthesis process is simple and broadly applicable. The findings conceptually provide new opportunities for the application of Al4C3 ceramic material in vacuum microelectronic devices.

Hemispherical Reflectance and Emittance Properties of Carbon Nanotubes Coatings at Far-Infrared Wavelengths

NASA Technical Reports Server (NTRS)

Quijada, Manuel A.; Hagopian, John G.; Getty, Stephanie; Kinzer, Raymond (Robin) E., Jr.; Wollack, Edward

2011-01-01

Recent visible wavelength observations of Multiwalled Carbon Nanotubes (MWCNT) coatings have revealed that they represent the blackest materials known in nature with a Total Hemispherical Reflectance (THR) less than .25%. This makes them as exceptionally good absorbers, with the potential to provide order-of-magnitude improvement in stray-light suppression over current black surface treatments when used in an optical system. Here we extend the characterization of this class of materials into the infrared spectral region to further evaluate their potential for use on instrument baffles for stray-light suppression and to manage spacecraft thermal properties to dissipate heat through radiant heat transfer process. These characterizations will include the wavelength-dependent Total Hemispherical Reflectance properties in the mid-IR and far-infrared spectral regions (2-100 micrometers). Determination of the temperature-dependent emittance will be investigated in the temperature range of 20 to 300 K. These results will be compared against other more conventional black coatings such as Acktar Fractal Black or Z-306 coatings among others.

Preparation and Optical Properties of Infrared Transparent 3Y-TZP Ceramics.

PubMed

Wang, Chuanfeng; Mao, Xiaojian; Peng, Ya-Pei; Jiang, Benxue; Fan, Jintai; Xu, Yangyang; Zhang, Long; Zhao, Jingtai

2017-04-07

In the present study, a tough tetragonal zirconia polycrystalline (Y-TZP) material was developed for use in high-speed infrared windows and domes. The influence of the preparation procedure and the microstructure on the material's optical properties was evaluated by SEM and FT-IR spectroscopy. It was revealed that a high transmittance up to 77% in the three- to five-micrometer IR region could be obtained when the sample was pre-sintered at 1225 °C and subjected to hot isostatic pressing (HIP) at 1275 °C for two hours. The infrared transmittance and emittance at elevated temperature were also examined. The in-line transmittance remained stable as the temperature increased to 427 °C, with degradation being observed only near the infrared cutoff edge. Additionally, the emittance property of 3Y-TZP ceramic at high temperature was found to be superior to those of sapphire and spinel. Overall, the results indicate that Y-TZP ceramic is a potential candidate for high-speed infrared windows and domes.

Studies of thermionic materials for space power applications

NASA Technical Reports Server (NTRS)

1972-01-01

The effect of microstructures of tungsten cladding on the transport rates of carbide fuel components was studied at 2073 K. hyperstoichiometric 90UC-10ZrC containing 4 wt% tungsten was clad with six types of tungsten material of 40 mil thickness. Screening tests of 1000 hours were carried out, and then selected samples were subjected to long-term tests up to 10,000 hours. The results indicate that the microstructures strongly affect the transport rates of carbide fuel components. The conditions for preparing (110) oriented cylindrical chloride tungsten emitters of high vacuum work functions were also investigated. Specimen sets were deposited on fluoride tungsten substrates for evaluating the effects of various deposition parameters on the degree and uniformity of the (110) preferred orientation and the vacuum work function. Long-term tests showed that the high vacuum work function of a cylindrical emitter was stable and the chloride tungsten to fluoride tungsten bond remained in excellent shape after 4850 hours at 2073 K.

Work functions of hafnium nitride thin films as emitter material for field emitter arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gotoh, Yasuhito, E-mail: gotoh.yasuhito.5w@kyoto-u.ac.jp; Fujiwara, Sho; Tsuji, Hiroshi

The work functions of hafnium nitride thin films prepared by radio-frequency magnetron sputtering were investigated in vacuum, before and after surface cleaning processes, with a view of improving the properties of as-fabricated field emitter arrays comprising hafnium nitride emitters. The measurement of the work function was first performed for the as-deposited films and then for films subjected to surface cleaning process, either thermal treatment or ion bombardment. Thermal treatment at a maximum temperature of 300 °C reduced the work function by 0.7 eV. Once the film was heated, the work function maintained the reduced value, even after cooling to room temperature. Amore » little change in the work function was observed for the second and third thermal treatments. The ion bombardment was conducted by exposing the sample to a thin plasma for different sample bias conditions and processing times. When the sample was biased at −10 V, the work function decreased by 0.6 eV. The work function reduction became saturated in the early stage of the ion bombardment. When the sample was biased at −50 V, the work function exhibited different behaviors, that is, first it decreased rapidly and then increased in response to the increase in processing time. The lowest attainable work function was found to be 4.00 eV. It should be noted that none of the work function values reported in this paper were obtained using surfaces that were demonstrated to be free from oxygen contamination. The present results suggest that the current–voltage characteristics of a field emitter array can be improved by a factor of 25–50 by the examined postprocesses.« less

Chirped circular dielectric gratings for near-unity collection efficiency from quantum emitters in bulk diamond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Jiabao; Liapis, Andreas C.; Chen, Edward H.

Effcient collection of fluorescence from nitrogen vacancy (NV) centers in diamond underlies the spin-dependent optical read-out that is necessary for quantum information processing and enhanced sensing applications. The optical collection effciency from NVs within diamond substrates is limited primarily due to the high refractive index of diamond and the non-directional dipole emission. Here we introduce a light collection strategy based on chirped, circular dielectric gratings that can be fabricated on a bulk diamond substrate to redirect an emitter’s far-field radiation pattern. Using a genetic optimization algorithm, these grating designs achieve 98.9% collection effciency for the NV zero-phonon emission line, collectedmore » from the back surface of the diamond with an objective of aperture 0.9. Across the broadband emission spectrum of the NV (600-800 nm), the chirped grating achieves 82.2% collection e ciency into a numerical aperture of 1.42, corresponding to an oil immersion objective again on the back side of the diamond. Our proposed bulk-dielectric grating structures are applicable to other optically active solid state quantum emitters in high index host materials.« less

Chirped circular dielectric gratings for near-unity collection efficiency from quantum emitters in bulk diamond

DOE PAGES

Zheng, Jiabao; Liapis, Andreas C.; Chen, Edward H.; ...

2017-12-13

Effcient collection of fluorescence from nitrogen vacancy (NV) centers in diamond underlies the spin-dependent optical read-out that is necessary for quantum information processing and enhanced sensing applications. The optical collection effciency from NVs within diamond substrates is limited primarily due to the high refractive index of diamond and the non-directional dipole emission. Here we introduce a light collection strategy based on chirped, circular dielectric gratings that can be fabricated on a bulk diamond substrate to redirect an emitter’s far-field radiation pattern. Using a genetic optimization algorithm, these grating designs achieve 98.9% collection effciency for the NV zero-phonon emission line, collectedmore » from the back surface of the diamond with an objective of aperture 0.9. Across the broadband emission spectrum of the NV (600-800 nm), the chirped grating achieves 82.2% collection e ciency into a numerical aperture of 1.42, corresponding to an oil immersion objective again on the back side of the diamond. Our proposed bulk-dielectric grating structures are applicable to other optically active solid state quantum emitters in high index host materials.« less

Radiation tolerant compact image sensor using CdTe photodiode and field emitter array (Conference Presentation)

NASA Astrophysics Data System (ADS)

Masuzawa, Tomoaki; Neo, Yoichiro; Mimura, Hidenori; Okamoto, Tamotsu; Nagao, Masayoshi; Akiyoshi, Masafumi; Sato, Nobuhiro; Takagi, Ikuji; Tsuji, Hiroshi; Gotoh, Yasuhito

2016-10-01

A growing demand on incident detection is recognized since the Great East Japan Earthquake and successive accidents in Fukushima nuclear power plant in 2011. Radiation tolerant image sensors are powerful tools to collect crucial information at initial stages of such incidents. However, semiconductor based image sensors such as CMOS and CCD have limited tolerance to radiation exposure. Image sensors used in nuclear facilities are conventional vacuum tubes using thermal cathodes, which have large size and high power consumption. In this study, we propose a compact image sensor composed of a CdTe-based photodiode and a matrix-driven Spindt-type electron beam source called field emitter array (FEA). A basic principle of FEA-based image sensors is similar to conventional Vidicon type camera tubes, but its electron source is replaced from a thermal cathode to FEA. The use of a field emitter as an electron source should enable significant size reduction while maintaining high radiation tolerance. Current researches on radiation tolerant FEAs and development of CdTe based photoconductive films will be presented.

Open-circuit voltage improvements in low-resistivity solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Klucher, T. M.; Mazaris, G. A.; Weizer, V. G.

1979-01-01

Mechanisms limiting the open-circuit voltage in 0.1 ohm-cm solar cells were investigated. It was found that a rather complicated multistep diffusion process could produce cells with significantly improved voltages. The voltage capabilities of various laboratory cells were compared independent of their absorption and collection efficiencies. This was accomplished by comparing the cells on the basis of their saturation currents or, equivalently, comparing their voltage outputs at a constant current-density level. The results show that for both the Lewis diffused emitter cell and the Spire ion-implanted emitter cell the base component of the saturation current is voltage controlling. The evidence for the University of Florida cells, although not very conclusive, suggests emitter control of the voltage in this device. The data suggest further that the critical voltage-limiting parameter for the Lewis cell is the electron mobility in the cell base.

Heralded quantum repeater based on the scattering of photons off single emitters using parametric down-conversion source.

PubMed

Song, Guo-Zhu; Wu, Fang-Zhou; Zhang, Mei; Yang, Guo-Jian

2016-06-28

Quantum repeater is the key element in quantum communication and quantum information processing. Here, we investigate the possibility of achieving a heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides. We design the compact quantum circuits for nonlocal entanglement generation, entanglement swapping, and entanglement purification, and discuss the feasibility of our protocols with current experimental technology. In our scheme, we use a parametric down-conversion source instead of ideal single-photon sources to realize the heralded quantum repeater. Moreover, our protocols can turn faulty events into the detection of photon polarization, and the fidelity can reach 100% in principle. Our scheme is attractive and scalable, since it can be realized with artificial solid-state quantum systems. With developed experimental technique on controlling emitter-waveguide systems, the repeater may be very useful in long-distance quantum communication.

Heralded quantum repeater based on the scattering of photons off single emitters using parametric down-conversion source

PubMed Central

Song, Guo-Zhu; Wu, Fang-Zhou; Zhang, Mei; Yang, Guo-Jian

2016-01-01

Quantum repeater is the key element in quantum communication and quantum information processing. Here, we investigate the possibility of achieving a heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides. We design the compact quantum circuits for nonlocal entanglement generation, entanglement swapping, and entanglement purification, and discuss the feasibility of our protocols with current experimental technology. In our scheme, we use a parametric down-conversion source instead of ideal single-photon sources to realize the heralded quantum repeater. Moreover, our protocols can turn faulty events into the detection of photon polarization, and the fidelity can reach 100% in principle. Our scheme is attractive and scalable, since it can be realized with artificial solid-state quantum systems. With developed experimental technique on controlling emitter-waveguide systems, the repeater may be very useful in long-distance quantum communication. PMID:27350159

Shielding in ungated field emitter arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harris, J. R.; Jensen, K. L.; Shiffler, D. A.

Cathodes consisting of arrays of high aspect ratio field emitters are of great interest as sources of electron beams for vacuum electronic devices. The desire for high currents and current densities drives the cathode designer towards a denser array, but for ungated emitters, denser arrays also lead to increased shielding, in which the field enhancement factor β of each emitter is reduced due to the presence of the other emitters in the array. To facilitate the study of these arrays, we have developed a method for modeling high aspect ratio emitters using tapered dipole line charges. This method can bemore » used to investigate proximity effects from similar emitters an arbitrary distance away and is much less computationally demanding than competing simulation approaches. Here, we introduce this method and use it to study shielding as a function of array geometry. Emitters with aspect ratios of 10{sup 2}–10{sup 4} are modeled, and the shielding-induced reduction in β is considered as a function of tip-to-tip spacing for emitter pairs and for large arrays with triangular and square unit cells. Shielding is found to be negligible when the emitter spacing is greater than the emitter height for the two-emitter array, or about 2.5 times the emitter height in the large arrays, in agreement with previously published results. Because the onset of shielding occurs at virtually the same emitter spacing in the square and triangular arrays, the triangular array is preferred for its higher emitter density at a given emitter spacing. The primary contribution to shielding in large arrays is found to come from emitters within a distance of three times the unit cell spacing for both square and triangular arrays.« less

Highly efficient and stable white organic light emitting diode base on double recombination zones of phosphorescent blue/orange emitters.

PubMed

Lee, Seok Jae; Koo, Ja Ryong; Lim, Dong Hwan; Park, Hye Rim; Kim, Young Kwan; Ha, Yunkyoung

2011-08-01

We demonstrated efficient and stable white phosphorescent organic light-emitting diodes (OLEDs) with double-emitting layers (D-EMLs), which were comprised of two emissive layers with a hole transport-type host of N,N'-dicarbazolyl-3,5-benzene (mCP) and a electron transport-type host of 2,2',2"-(1,3,5-benzenetryl)tris(1-phenyl)-1H-benzimidazol (TPBi) with blue/orange emitters, respectively. We fabricated two type white devices with single emitting layer (S-EML) and D-EML of orange emitter, maintaining double recombination zone of blue emitter. In addition, the device architecture was developed to confine excitons inside the D-EMLs and to manage triplet excitons by controlling the charge injection. As a result, light-emitting performances of white OLED with D-EMLs were improved and showed the steady CIE coordinates compared to that with S-EML of orange emitter, which demonstrated the maximum luminous efficiency and external quantum efficiency were 21.38 cd/A and 11.09%. It also showed the stable white emission with CIE(x,y) coordinates from (x = 0.36, y = 0.37) at 6 V to (x = 0.33, y = 0.38) at 12 V.

Variable Emittance Electrochromics Using Ionic Electrolytes and Low Solar Absorptance Coatings

NASA Technical Reports Server (NTRS)

Chandrasekhar, Prasanna

2011-01-01

One of the last remaining technical hurdles with variable emittance devices or skins based on conducting polymer electrochromics is the high solar absorptance of their top surfaces. This high solar absorptance causes overheating of the skin when facing the Sun in space. Existing technologies such as mechanical louvers or loop heat pipes are virtually inapplicable to micro (< 20 kg) and nano (< 5 kg) spacecraft. Novel coatings lower the solar absorption to Alpha(s) of between 0.30 and 0.46. Coupled with the emittance properties of the variable emittance skins, this lowers the surface temperature of the skins facing the Sun to between 30 and 60 C, which is much lower than previous results of 100 C, and is well within acceptable satellite operations ranges. The performance of this technology is better than that of current new technologies such as microelectromechanical systems (MEMS), electrostatics, and electrophoretics, especially in applications involving micro and nano spacecraft. The coatings are deposited inside a high vacuum, layering multiple coatings onto the top surfaces of variable emittance skins. They are completely transparent in the entire relevant infrared region (about 2 to 45 microns), but highly reflective in the visible-NIR (near infrared) region of relevance to solar absorptance.

Design, conditioning, and performance of a high voltage, high brightness dc photoelectron gun with variable gap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maxson, Jared; Bazarov, Ivan; Dunham, Bruce

2014-09-15

A new high voltage photoemission gun has been constructed at Cornell University which features a segmented insulator and a movable anode, allowing the cathode-anode gap to be adjusted. In this work, we describe the gun's overall mechanical and high voltage design, the surface preparation of components, as well as the clean construction methods. We present high voltage conditioning data using a 50 mm cathode-anode gap, in which the conditioning voltage exceeds 500 kV, as well as at smaller gaps. Finally, we present simulated emittance results obtained from a genetic optimization scheme using voltage values based on the conditioning data. Thesemore » results indicate that for charges up to 100 pC, a 30 mm gap at 400 kV has equal or smaller 100% emittance than a 50 mm gap at 450 kV, and also a smaller core emittance, when placed as the source for the Cornell energy recovery linac photoinjector with bunch length constrained to be <3 ps rms. For 100 pC up to 0.5 nC charges, the 50 mm gap has larger core emittance than the 30 mm gap, but conversely smaller 100% emittance.« less

Consequences of bounds on longitudinal emittance growth for the design of recirculating linear accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berg, J. S.

2015-05-03

Recirculating linear accelerators (RLAs) are a cost-effective method for the acceleration of muons for a muon collider in energy ranges from a couple GeV to a few 10s of GeV. Muon beams generally have longitudinal emittances that are large for the RF frequency that is used, and it is important to limit the growth of that longitudinal emittance. This has particular consequences for the arc design of the RLAs. I estimate the longitudinal emittance growth in an RLA arising from the RF nonlinearity. Given an emittance growth limitation and other design parameters, one can then compute the maximum momentum compactionmore » in the arcs. I describe how to obtain an approximate arc design satisfying these requirements based on the deisgn in [1]. Longitudinal dynamics also determine the energy spread in the beam, and this has consequences on the transverse phase advance in the linac. This in turn has consequences for the arc design due to the need to match beta functions. I combine these considerations to discuss design parameters for the acceleration of muons for a collider in an RLA from 5 to 63 GeV.« less

The Role of Triplet Exciton Diffusion in Light-Upconverting Polymer Glasses.

PubMed

Raišys, Steponas; Kazlauskas, Karolis; Juršėnas, Saulius; Simon, Yoan C

2016-06-22

Light upconversion (UC) via triplet-triplet annihilation (TTA) by using noncoherent photoexcitation at subsolar irradiance power densities is extremely attractive, particularly for enhanced solar energy harvesting. Unfortunately, practical TTA-UC application is hampered by low UC efficiency of upconverting polymer glasses, which is commonly attributed to poor exciton diffusion of the triplet excitons across emitter molecules. The present study addresses this issue by systematically evaluating triplet exciton diffusion coefficients and diffusion lengths (LD) in a UC model system based on platinum-octaethylporphyrin-sensitized poly(methyl methacrylate)/diphenylanthracene (emitter) films as a function of emitter concentration (15-40 wt %). For this evaluation time-resolved photoluminescence bulk-quenching technique followed by Stern-Volmer-type quenching analysis of experimental data was employed. The key finding is that although increasing emitter concentration in the disordered PMMA/DPA/PtOEP films improves triplet exciton diffusion, and thus LD, this does not result in enhanced UC quantum yield. Conversely, improved LD accompanied by the accelerated decay of UC intensity on millisecond time scale degrades TTA-UC performance at high emitter loadings (>25 wt %) and suggests that diffusion-enhanced nonradiative decay of triplet excitons is the major limiting factor.

Systems and methods for neutron detection using scintillator nano-materials

DOEpatents

Letant, Sonia Edith; Wang, Tzu-Fang

2016-03-08

In one embodiment, a neutron detector includes a three dimensional matrix, having nanocomposite materials and a substantially transparent film material for suspending the nanocomposite materials, a detector coupled to the three dimensional matrix adapted for detecting a change in the nanocomposite materials, and an analyzer coupled to the detector adapted for analyzing the change detected by the detector. In another embodiment, a method for detecting neutrons includes receiving radiation from a source, converting neutrons in the radiation into alpha particles using converter material, converting the alpha particles into photons using quantum dot emitters, detecting the photons, and analyzing the photons to determine neutrons in the radiation.

Losses, gain, and lasing in organic and perovskite active materials (Conference Presentation)

NASA Astrophysics Data System (ADS)

Pourdavoud, Neda; Riedl, Thomas J.

2016-09-01

Organic solid state lasers (OSLs) based on semiconducting polymers or small molecules have seen some significant progress over the past decade. Highly efficient organic gain materials combined with high-Q resonator geometries (distributed feedback (DFB), VCSEL, etc.) have enabled OSLs, optically pumped by simple inorganic laser diodes or even LEDs. However, some fundamental goals remain to be reached, like continuous wave (cw) operation and injection lasing. I will address various loss mechanisms related to accumulated triplet excitons or long-lived polarons that in combination with the particular photo-physics of organic gain media state the dominant road-blocks on the way to reach these goals. I will discuss the recent progress in fundamental understanding of these loss processes, which now provides a solid basis for modelling, e.g. of laser dynamics. Avenues to mitigate these fundamental loss mechanisms, e.g. by alternative materials will be presented. In this regard, a class of gain materials based on organo-lead halide perovskites re-entered the scene as light emitters, recently. Enjoying a tremendous lot of attention as active material for solution processed solar cells with a 20+% efficiency, they have recently unveiled their exciting photo-physics for lasing applications. Optically pumped lasing in these materials has been achieved. I will discuss some of the unique properties that render this class of materials a promising candidate to overcome some of the limitations of "classical" organic gain media.

Broadband Light Collection Efficiency Enhancement of Carbon Nanotube Excitons Coupled to Metallo-Dielectric Antenna Arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shayan, Kamran; Rabut, Claire; Kong, Xiaoqing

The realization of on-chip quantum networks ideally requires lossless interfaces between photons and solid-state quantum emitters. We propose and demonstrate on-chip arrays of metallo-dielectric antennas (MDA) that are tailored toward efficient and broadband light collection from individual embedded carbon nanotube quantum emitters by trapping air gaps on chip that form cavity modes. Scalable implementation is realized by employing polymer layer dry-transfer techniques that avoid solvent incompatibility issues, as well as a planar design that avoids solid-immersion lenses. Cryogenic measurements demonstrate 7-fold enhanced exciton intensity when compared to emitters located on bare wafers, corresponding to a light collection efficiency (LCE) upmore » to 92% in the best case (average LCE of 69%) into a narrow output cone of +/-15 degrees that enables a priori fiber-to-chip butt coupling. The demonstrated MDA arrays are directly compatible with other quantum systems, particularly 2D materials, toward enabling efficient on-chip quantum light sources or spin-photon interfaces requiring unity light collection, both at cryogenic or room temperature.« less

Transport property correlations for the niobium-1% zirconium alloy

NASA Astrophysics Data System (ADS)

Senor, David J.; Thomas, J. Kelly; Peddicord, K. L.

1990-10-01

Correlations were developed for the electrical resistivity (ρ), thermal conductivity ( k), and hemispherical total emittance (ɛ) of niobium-1% zirconium as functions of temperature. All three correlations were developed as empirical fits to experimental data. ρ = 5.571 + 4.160 × 10 -2(T) - 4.192 × 10 -6(T) 2 μΩcm , k = 13.16( T) 0.2149W/ mK, ɛ = 6.39 × 10 -2 + 4.98 × 10 -5( T) + 3.62 × 10 -8( T) 2 - 7.28 × 10 -12( T) 3. The relative standard deviation of the electrical resistivity correlation is 1.72% and it is valid over the temperature range 273 to 2700 K. The thermal conductivity correlation has a relative standard deviation of 3.24% and is valid over the temperature range 379 to 1421 K. The hemispherical total emittance correlation was developed for smooth surface materials only and represents a conservative estimate of the emittance of the alloy for space reactor fuel element modeling applications. It has a relative standard deviation of 9.50% and is valid over the temperature range 755 to 2670 K.

High-power and brightness laser diode modules using new DBR chips

NASA Astrophysics Data System (ADS)

Yu, Hao; Riva, Martina; Rossi, Giammarco; Braglia, Andrea; Perrone, Guido

2018-02-01

The paper reports on the design, manufacturing and preliminary characterization of a new family of compact and high beam quality multi-emitter laser diode modules capable of delivering up to over 400W in a 135/0.15 fiber. The layout exploits a proprietary architecture and is based on innovative narrow linewidth high-power DBR chips, properly combined through spatial, polarization and wavelength multiplexing. The intrinsic wavelength-stabilization of these DBR chips allows the use of the developed modules not only for direct-diode material processing but also in pump sources for ytterbium-doped fiber lasers without the need of external stabilization devices.

Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance

DOEpatents

Murray, Christopher S.; Wilt, David M.

2000-01-01

An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

Laser ion source for high brightness heavy ion beam

DOE PAGES

Okamura, M.

2016-09-01

A laser ion source is known as a high current high charge state heavy ion source. But, we place great emphasis on the capability to realize a high brightness ion source. A laser ion source has a pinpoint small volume where materials are ionized and can achieve quite uniform low temperature ion beam. Those features may enable us to realize very small emittance beams. Furthermore, a low charge state high brightness laser ion source was successfully commissioned in Brookhaven National Laboratory in 2014. Now most of all the solid based heavy ions are being provided from the laser ion sourcemore » for regular operation.« less

A novel method for rapid in vitro radiobioassay

NASA Astrophysics Data System (ADS)

Crawford, Evan Bogert

Rapid and accurate analysis of internal human exposure to radionuclides is essential to the effective triage and treatment of citizens who have possibly been exposed to radioactive materials in the environment. The two most likely scenarios in which a large number of citizens would be exposed are the detonation of a radiation dispersal device (RDD, "dirty bomb") or the accidental release of an isotope from an industrial source such as a radioisotopic thermal generator (RTG). In the event of the release and dispersion of radioactive materials into the environment in a large city, the entire population of the city -- including all commuting workers and tourists -- would have to be rapidly tested, both to satisfy the psychological needs of the citizens who were exposed to the mental trauma of a possible radiation dose, and to satisfy the immediate medical needs of those who received the highest doses and greatest levels of internal contamination -- those who would best benefit from rapid, intensive medical care. In this research a prototype rapid screening method to screen urine samples for the presence of up to five isotopes, both individually and in a mixture, has been developed. The isotopes used to develop this method are Co-60, Sr-90, Cs-137, Pu-238, and Am-241. This method avoids time-intensive chemical separations via the preparation and counting of a single sample on multiple detectors, and analyzing the spectra for isotope-specific markers. A rapid liquid-liquid separation using an organic extractive scintillator can be used to help quantify the activity of the alpha-emitting isotopes. The method provides quantifiable results in less than five minutes for the activity of beta/gamma-emitting isotopes when present in the sample at the intervention level as defined by the Centers for Disease Control and Prevention (CDC), and quantifiable results for the activity levels of alpha-emitting isotopes present at their respective intervention levels in approximately 30 minutes of sample preparation and counting time. Radiation detector spectra -- e.g. those from high-purity germanium (HPGe) gamma detectors and liquid scintillation detectors -- which contain decay signals from multiple isotopes often have overlapping signals: the counts from one isotope's decay can appear in energy channels associated with another isotope's decay, complicating the calculation of each isotope's activity. The uncertainties associated with analyzing these spectra have been traced in order to determine the effects of one isotope's count rate on the sensitivity and uncertainty associated with each other isotope. The method that was developed takes advantage of activated carbon filtration to eliminate quenching effects and to make the liquid scintillation spectra from different urine samples comparable. The method uses pulse-shape analysis to reduce the interference from beta emitters in the liquid scintillation spectrum and improve the minimum detectable activity (MDA) and minimum quantifiable activity (MQA) for alpha emitters. The method uses an HPGe detector to quantify the activity of gamma emitters, and subtract their isotopes' contributions to the liquid scintillation spectra via a calibration factor, such that the pure beta and pure alpha emitters can be identified and quantified from the resulting liquid scintillation spectra. Finally, the method optionally uses extractive scintillators to rapidly separate the alpha emitters from the beta emitters when the activity from the beta emitters is too great to detect or quantify the activity from the alpha emitters without such a separation. The method is able to detect and quantify all five isotopes, with uncertainties and biases usually in the 10-40% range, depending upon the isotopic mixtures and the activity ratios between each of the isotopes.

Improving the Stability of Metal Halide Perovskite Materials and Light-Emitting Diodes.

PubMed

Cho, Himchan; Kim, Young-Hoon; Wolf, Christoph; Lee, Hyeon-Dong; Lee, Tae-Woo

2018-01-25

Metal halide perovskites (MHPs) have numerous advantages as light emitters such as high photoluminescence quantum efficiency with a direct bandgap, very narrow emission linewidth, high charge-carrier mobility, low energetic disorder, solution processability, simple color tuning, and low material cost. Based on these advantages, MHPs have recently shown unprecedented radical progress (maximum current efficiency from 0.3 to 42.9 cd A -1 ) in the field of light-emitting diodes. However, perovskite light-emitting diodes (PeLEDs) suffer from intrinsic instability of MHP materials and instability arising from the operation of the PeLEDs. Recently, many researchers have devoted efforts to overcome these instabilities. Here, the origins of the instability in PeLEDs are reviewed by categorizing it into two types: instability of (i) the MHP materials and (ii) the constituent layers and interfaces in PeLED devices. Then, the strategies to improve the stability of MHP materials and PeLEDs are critically reviewed, such as A-site cation engineering, Ruddlesden-Popper phase, suppression of ion migration with additives and blocking layers, fabrication of uniform bulk polycrystalline MHP layers, and fabrication of stable MHP nanoparticles. Based on this review of recent advances, future research directions and an outlook of PeLEDs for display applications are suggested. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Compact Blue-Green Lasers: Summaries of Papers Presented at the Topical Meeting Held in Sante Fe, New Mexico on 20-21 February 1992. Volume 6. Technical Digest Series

DTIC Science & Technology

1992-02-21

Contents: Applications, IR Pumped Visible Lasers, Blue-Green Diode Emitters, Materials, Poster Session, Frequency Conversion in Bulk Devices, Gas Lasers, and Frequency Conversion in Guided-Wave Devices.

40 CFR 80.45 - Complex emissions model.

Code of Federal Regulations, 2010 CFR

2010-07-01

... this section for the appropriate phase and season Nd = exp d1(t)/exp d1(b) Hd = exp d2(t)/exp d2(b) w1.... d2(t) = Higher emitter 1,3-butadiene equation as defined in paragraph (e)(7)(ii) of this section... the base fuel's properties. d2(b) = Higher emitter 1,3-butadiene equation as defined in paragraph (e...

High quality GaAs single photon emitters on Si substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bietti, S.; Sanguinetti, S.; Cavigli, L.

2013-12-04

We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperatures on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly proved by antibunching in the second order correlation function as measured with a H anbury Brown and Twiss interferometer.

Influence of Surface Roughness on Strong Light-Matter Interaction of a Quantum Emitter-Metallic Nanoparticle System.

PubMed

Lu, Yu-Wei; Li, Ling-Yan; Liu, Jing-Feng

2018-05-08

We investigate the quantum optical properties of strong light-matter interaction between a quantum emitter and a metallic nanoparticle beyond idealized structures with a smooth surface. Based on the local coupling strength and macroscopic Green's function, we derived an exact quantum optics approach to obtain the field enhancement and light-emission spectrum of a quantum emitter. Numerical simulations show that the surface roughness has a greater effect on the near-field than on the far-field, and slightly increases the vacuum Rabi splitting on average. Further, we verified that the near-field enhancement is mainly determined by the surface features of hot-spot area.

Ion source with corner cathode

NASA Technical Reports Server (NTRS)

Herrero, Federico A. (Inventor); Roman, Patrick A. (Inventor)

2012-01-01

An ion source may include first, second, and third electrodes. The first electrode may be a repeller having a V-shaped groove. The second electrode may be an electron emitter filament disposed adjacent the base of the V-shaped groove. The third electrode may be an anode that defines an enclosed volume with an aperture formed therein adjacent the electron emitter filament. A potential of the first electrode may be less than a potential of the second electrode, and the potential of the second electrode may be less than a potential of the third electrode. A fourth electrode that is disposed between the electron emitter filament and the anode may be used to produce a more collimated electron beam.

A Yellow-Emitting Homoleptic Iridium(III) Complex Constructed from a Multifunctional Spiro Ligand for Highly Efficient Phosphorescent Organic Light-Emitting Diodes.

PubMed

Ren, Bao-Yi; Guo, Run-Da; Zhong, Dao-Kun; Ou, Chang-Jin; Xiong, Gang; Zhao, Xiang-Hua; Sun, Ya-Guang; Jurow, Matthew; Kang, Jun; Zhao, Yi; Li, Sheng-Biao; You, Li-Xin; Wang, Lin-Wang; Liu, Yi; Huang, Wei

2017-07-17

To suppress concentration quenching and to improve charge-carrier injection/transport in the emission layer (EML) of phosphorescent organic light-emitting diodes (PhOLEDs), a facial homoleptic iridium(III) complex emitter with amorphous characteristics was designed and prepared in one step from a multifunctional spiro ligand containing spiro[fluorene-9,9'-xanthene] (SFX) unit. Single-crystal X-ray analysis of the resulting fac-Ir(SFXpy) 3 complex revealed an enlarged Ir···Ir distance and negligible intermolecular π-π interactions between the spiro ligands. The emitter exhibits yellow emission and almost equal energy levels compared to the commercial phosphor iridium(III) bis(4-phenylthieno[3,2-c]pyridinato-N,C 2 ')acetylacetonate (PO-01). Dry-processed devices using a common host, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl, and the fac-Ir(SFXpy) 3 emitter at a doping concentration of 15 wt % exhibited a peak performance of 46.2 cd A -1 , 36.3 lm W -1 , and 12.1% for the current efficiency (CE), power efficiency (PE), and external quantum efficiency (EQE), respectively. Compared to control devices using PO-01 as the dopant, the fac-Ir(SFXpy) 3 -based devices remained superior in the doping range between 8 and 15 wt %. The current densities went up with increasing doping concentration at the same driving voltage, while the roll-offs remain relatively low even at high doping levels. The superior performance of the new emitter-based devices was ascribed to key roles of the spiro ligand for suppressing aggregation and assisting charge-carrier injection/transport. Benefiting from the amorphous stability of the emitter, the wet-processed device also exhibited respectful CE, PE, and EQE of 32.2 cd A -1 , 22.1 lm W -1 , and 11.3%, respectively, while the EQE roll-off was as low as 1.7% at the luminance of 1000 cd m -2 . The three-dimensional geometry and binary-conjugation features render SFX the ideal multifunctional module for suppressing concentration quenching, facilitating charge-carrier injection/transport, and improving the amorphous stability of iridium(III)-based phosphorescent emitters.

Nanocomposites for high-speed optical modulators and plasmonic thermal mid-infrared emitters

NASA Astrophysics Data System (ADS)

Demir, Veysi

Demand for high-speed optical modulators and narrow-bandwidth infrared thermal emitters for numerous applications continues to rise and new optical devices are needed to deal with massive data flows, processing powers, and fabrication costs. Conventional techniques are usually hindered by material limitations or electronic interconnects and advances in organic nanocomposite materials and their integration into photonic integrated circuits (PICs) have been acknowledged as a promising alternative to single crystal techniques. The work presented in this thesis uses plasmonic and magneto-optic effects towards the development of novel optical devices for harnessing light and generating high bandwidth signals (>40GHz) at room and cryogenic temperatures (4.2°K). Several publications have resulted from these efforts and are listed at the end of the abstract. In our first published research we developed a narrow-bandwidth mid-infrared thermal emitter using an Ag/dielectric/Ag thin film structure arranged in hexagonal planar lattice structures. PECVD produced nanoamorphous carbon (NAC) is used as a dielectric layer. Spectrally tunable (>2 mum) and narrow bandwidth (<0.5 mum) emission peaks in the range of 4-7 mum were demonstrated by decreasing the resistivity of NAC from 1012 and 109 O.cm with an MoSi2 dopant and increasing the emitter lattice constant from 4 to 7 mum. This technique offers excellent flexibility for developing cost-effective mid-IR sources as compared to costly fiber and quantum cascade lasers (QCLs). Next, the effect of temperature on the Verdet constant for cobalt-ferrite polymer nanocomposites was measured for a series of temperatures ranging from 40 to 200°K with a Faraday rotation polarimeter. No visual change was observed in the films during thermal cycling, and ˜4x improvement was achieved at 40°K. The results are promising and further analysis is merited at 4.2°K to assess the performance of this material for cryogenic magneto-optic modulators for supercomputers. Finally, the dielectric constant and loss tangent of MAPTMS sol-gel films were measured over a wide range of microwave frequencies. The test structures were prepared by spin-coating sol-gel films onto metallized glass substrates. The dielectric properties of the sol-gel were probed with several different sets of coplanar waveguides (CPWs) electroplated onto sol-gel films. The dielectric constant and loss-tangent of these films were determined to be ˜3.1 and 3 x 10-3 at 35GHz. These results are very promising indicating that sol-gels are viable cladding materials for high-speed electro-optic polymer modulators (>40GHz).

Understanding and development of manufacturable screen-printed contacts on high sheet-resistance emitters for low-cost silicon solar cells

NASA Astrophysics Data System (ADS)

Hilali, Mohamed M.

2005-11-01

A simple cost-effective approach was proposed and successfully employed to fabricate high-quality screen-printed (SP) contacts to high sheet-resistance emitters (100 O/sq) to improve the Si solar cell efficiency. Device modeling was used to quantify the performance enhancement possible from the high sheet-resistance emitter for various cell designs. It was found that for performance enhancement from the high sheet-resistance emitter, certain cell design criteria must be satisfied. Model calculations showed that in order to achieve any performance enhancement over the conventional ˜40 O/sq emitter, the high sheet resistance emitter solar cell must have a reasonably good (<120,000 cm/s) or low front-surface recombination velocity (FSRV). Model calculations were also performed to establish requirements for high fill factors (FFs). The results showed that the series resistance should be less than 0.8 O-cm2, the shunt resistance should be greater than 1000 O-cm2, and the junction leakage current should be less than 25 nA/cm2. Analytical microscopy and surface analysis techniques were used to study the Ag-Si contact interface of different SP Ag pastes. Physical and electrical properties of SP Ag thick-film contacts were studied and correlated to understand and achieve good-quality ohmic contacts to high sheet-resistance emitters for solar cells. This information was then used to define the criteria for high-quality screen-printed contacts. The role of paste constituents and firing scheme on contact quality were investigated to tailor the high-quality screen-printed contact interface structure that results in high performance solar cells. Results indicated that small particle size, high glass transition temperature, rapid firing and less aggressive glass frit help in producing high-quality contacts. Based on these results high-quality SP contacts with high FFs > 0.78 on high sheet-resistance emitters were achieved for the first time using a simple single-step firing process. This technology was applied to different substrates (monocrystalline and multicrystalline) and surfaces (textured and planar). Cell efficiencies of ˜16.2% on low-cost EFG ribbon substrates were achieved on high sheet-resistance emitters with SP contacts. A record high-efficiency SP solar cell of 19% with textured high sheet-resistance emitter was also fabricated and modeled.

Multi-spectral investigation of bulk and facet failures in high-power single emitters at 980 nm

NASA Astrophysics Data System (ADS)

Yanson, Dan; Levy, Moshe; Shamay, Moshe; Cohen, Shalom; Shkedy, Lior; Berk, Yuri; Tessler, Renana; Klumel, Genadi; Rappaport, Noam; Karni, Yoram

2013-03-01

Reliable single emitters delivering >10W in the 9xx nm spectral range, are common building blocks for fiber laser pumps. As facet passivation techniques can suppress or delay catastrophic optical mirror damage (COMD) extending emitter reliability into hundreds of thousands of hours, other, less dominant, failure modes such as intra-chip catastrophic optical bulk damage (COBD) become apparent. Based on our failure statistics in high current operation, only ~52% of all failures can be attributed to COMD. Imaging through a window opened in the metallization on the substrate (n) side of a p-side down mounted emitter provides valuable insight into both COMD and COBD failure mechanisms. We developed a laser ablation process to define a window on the n-side of an InGaAs/AlGaAs 980nm single emitter that is overlaid on the pumped 90μm stripe on the p-side. The ablation process is compatible with the chip wire-bonding, enabling the device to be operated at high currents with high injection uniformity. We analyzed both COMD and COBD failed emitters in the electroluminescence and mid-IR domains supported by FIB/SEM observation. The ablated devices revealed branching dark line patterns, with a line origin either at the facet center (COMD case) or near the stripe edge away from the facet (COBD case). In both cases, the branching direction is always toward the rear facet (against the photon density gradient), with SEM images revealing a disordered active layer structure. Absorption levels between 0.22eV - 0.55eV were observed in disordered regions by FT-IR spectroscopy. Temperature mapping of a single emitter in the MWIR domain was performed using an InSb detector. We also report an electroluminescence study of a single emitter just before and after failure.

Radiation-based near-field thermal rectification with phase transition materials

NASA Astrophysics Data System (ADS)

Yang, Yue; Basu, Soumyadipta; Wang, Liping

2013-10-01

The capability of manipulating heat flow has promising applications in thermal management and thermal circuits. In this Letter, we report strong thermal rectification effect based on the near-field thermal radiation between silicon dioxide (SiO2) and a phase transition material, vanadium dioxide (VO2), separated by nanometer vacuum gaps under the framework of fluctuational electrodynamics. Strong coupling of surface phonon polaritons between SiO2 and insulating VO2 leads to enhanced near-field radiative transfer, which on the other hand is suppressed when VO2 becomes metallic, resulting in thermal rectification. The rectification factor is close to 1 when vacuum gap is at 1 μm and it increases to almost 2 at sub-20-nm gaps when emitter and receiver temperatures are set to 400 and 300 K, respectively. Replacing bulk SiO2 with a thin film of several nanometers, rectification factor of 3 can be achieved when the vacuum gap is around 100 nm.

Metal-oxide-based energetic materials and synthesis thereof

DOEpatents

Tillotson, Thomas M. , Simpson; Randall, L [Livermore, CA; Hrubesh, Lawrence W [Pleasanton, CA

2006-01-17

A method of preparing energetic metal-oxide-based energetic materials using sol-gel chemistry has been invented. The wet chemical sol-gel processing provides an improvement in both safety and performance. Essentially, a metal-oxide oxidizer skeletal structure is prepared from hydrolyzable metals (metal salts or metal alkoxides) with fuel added to the sol prior to gelation or synthesized within the porosity metal-oxide gel matrix. With metal salt precursors a proton scavenger is used to destabilize the sol and induce gelation. With metal alkoxide precursors standard well-known sol-gel hydrolysis and condensation reactions are used. Drying is done by standard sol-gel practices, either by a slow evaporation of the liquid residing within the pores to produce a high density solid nanocomposite, or by supercritical extraction to produce a lower density, high porous nanocomposite. Other ingredients may be added to this basic nanostructure to change physical and chemical properties, which include organic constituents for binders or gas generators during reactions, burn rate modifiers, or spectral emitters.

Emitter signal separation method based on multi-level digital channelization

NASA Astrophysics Data System (ADS)

Han, Xun; Ping, Yifan; Wang, Sujun; Feng, Ying; Kuang, Yin; Yang, Xinquan

2018-02-01

To solve the problem of emitter separation under complex electromagnetic environment, a signal separation method based on multi-level digital channelization is proposed in this paper. A two-level structure which can divide signal into different channel is designed first, after that, the peaks of different channels are tracked using the track filter and the coincident signals in time domain are separated in time-frequency domain. Finally, the time domain waveforms of different signals are acquired by reverse transformation. The validness of the proposed method is proved by experiment.

Generic conditions for suppressing the coherent synchrotron radiation induced emittance growth in a two-dipole achromat

NASA Astrophysics Data System (ADS)

Jiao, Yi; Cui, Xiaohao; Huang, Xiyang; Xu, Gang

2014-06-01

The effect of the coherent synchrotron radiation (CSR) becomes evident, and leads to increased beam energy spread and transverse emittance dilution, as both the emittance and bunch length of the electron beams are continuously pushed down in present and forthcoming high-brightness light sources and linear colliders. Suppressing this effect is important to preserve the expected machine performance. Methods of the R-matrix analysis and the Courant-Snyder formalism analysis have been proposed to evaluate and to suppress the emittance growth due to CSR in achromatic cells. In this paper a few important modifications are made on these two methods, which enable us to prove that these two methods are equivalent to each other. With the modified analysis, we obtain explicit and generic conditions of cancelling the CSR-driven emittance excitation in a single achromat consisting of two dipoles of arbitrary bending angles. In spite of the fact that the analysis constrains itself in a linear regime, based on the assumption that CSR-induced particle energy deviation is proportional to both θ and ρ1/3, with θ being the bending angle and ρ the bending radius, it is demonstrated through ELEGANT simulations that the conditions derived from this analysis are still effective in suppressing the emittance growth when a more detailed one-dimensional CSR model is considered. In addition, it illustrates that the emittance growth can be reduced to a lower level with the proposed conditions than with the other two approaches, such as matching the beam envelope to the CSR kick and setting the cell-to-cell betatron phase advance to an appropriate value.

Dipole-Induced Electromagnetic Transparency

NASA Astrophysics Data System (ADS)

Puthumpally-Joseph, Raiju; Sukharev, Maxim; Atabek, Osman; Charron, Eric

2014-10-01

We determine the optical response of a thin and dense layer of interacting quantum emitters. We show that, in such a dense system, the Lorentz redshift and the associated interaction broadening can be used to control the transmission and reflection spectra. In the presence of overlapping resonances, a dipole-induced electromagnetic transparency (DIET) regime, similar to electromagnetically induced transparency (EIT), may be achieved. DIET relies on destructive interference between the electromagnetic waves emitted by quantum emitters. Carefully tuning material parameters allows us to achieve narrow transmission windows in, otherwise, completely opaque media. We analyze in detail this coherent and collective effect using a generalized Lorentz model and show how it can be controlled. Several potential applications of the phenomenon, such as slow light, are proposed.

Compact Rare Earth Emitter Hollow Cathode

NASA Technical Reports Server (NTRS)

Watkins, Ronald; Goebel, Dan; Hofer, Richard

2010-01-01

A compact, high-current, hollow cathode utilizing a lanthanum hexaboride (LaB6) thermionic electron emitter has been developed for use with high-power Hall thrusters and ion thrusters. LaB6 cathodes are being investigated due to their long life, high current capabilities, and less stringent xenon purity and handling requirements compared to conventional barium oxide (BaO) dispenser cathodes. The new cathode features a much smaller diameter than previously developed versions that permit it to be mounted on axis of a Hall thruster ( internally mounted ), as opposed to the conventional side-mount position external to the outer magnetic circuit ("externally mounted"). The cathode has also been reconfigured to be capable of surviving vibrational loads during launch and is designed to solve the significant heater and materials compatibility problems associated with the use of this emitter material. This has been accomplished in a compact design with the capability of high-emission current (10 to 60 A). The compact, high-current design has a keeper diameter that allows the cathode to be mounted on the centerline of a 6- kW Hall thruster, inside the iron core of the inner electromagnetic coil. Although designed for electric propulsion thrusters in spacecraft station- keeping, orbit transfer, and interplanetary applications, the LaB6 cathodes are applicable to the plasma processing industry in applications such as optical coatings and semiconductor processing where reactive gases are used. Where current electrical propulsion thrusters with BaO emitters have limited life and need extremely clean propellant feed systems at a significant cost, these LaB6 cathodes can run on the crudest-grade xenon propellant available without impact. Moreover, in a laboratory environment, LaB6 cathodes reduce testing costs because they do not require extended conditioning periods under hard vacuum. Alternative rare earth emitters, such as cerium hexaboride (CeB6) can be used in this configuration with possibly an even longer emitter life. This cathode is specifically designed to integrate on the centerline of a high-power Hall thruster, thus eliminating the asymmetries in the plasma discharge common to cathodes previously mounted externally to the thruster s magnetic circuit. An alternative configuration for the cathode uses an external propellant feed. This diverts a fraction of the total cathode flow to an external feed, which can improve the cathode coupling efficiency at lower total mass flow rates. This can improve the overall thruster efficiency, thereby decreasing the required propellant loads for different missions. Depending on the particular mission, reductions in propellant loads can lead to mission enabling capabilities by allowing launch vehicle step-down, greater payload capability, or by extending the life of a spacecraft.

JPRS Report, Science & Technology, USSR: Materials Science

DTIC Science & Technology

1988-01-11

Materials Scientific Research Instil; MoLow] neat-resiltan? !^erimental"»<* of single crystals of the ZhS6F neat resistant alloy was made for the...Filimonov, and V. L. Chakhlov, Electron Introscopy Scientific Research Institute, Tomsk] [Abstract] A small betatron operating in the pulse mode...a radiation source, a generator of current pulses, and a control panel. Current pulses with a repetition rate up to 200 Hz energize the emitter

Technology of Fast Spark Gaps

DTIC Science & Technology

1989-09-01

material, reticulated vitreous carbon , that consists of an open-cell, rigid carbon "foam." This material was developed in the mid- 1970’s as a filter...These halides are excellent emitters of photoelectrons. 33 About 90 percent of the volume of reticulated vitreous carbon is void. Thus an electrical...for fluids and as a scaffold for work at high temperatures or with corrosive agents. A relatively fine mesh of vitreous carbon , perhaps about four

Effects of atomic oxygen and ultraviolet radiation on candidate elastomeric materials for long duration missions. Test series no.1

NASA Technical Reports Server (NTRS)

Linton, R. C.; Finckenor, M. M.; Kamenetzky, R. R.; Gray, P.

1993-01-01

Research was conducted at MSFC on the behavior of elastomeric materials after exposure to simulated space environment. Silicone S383 and Viton V747 samples were exposed to thermal vacuum, ultraviolet radiation, and atomic oxygen and then evaluated for changes in material properties. Characterization of the elastomeric materials included weight, hardness, optical inspection under normal and black light, spectrofluorescence, solar absorptance and emittance, Fourier transform infrared spectroscopy, and permeability. These results indicate a degree of sensitivity to exposure and provided some evidence of UV and atomic oxygen synergism.

Multiparticle Simulation of Intrabeam Scattering for SuperB

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biagini, M.; Boscolo, M.; Demma, T.

In this communication we present the structure of a multiparticle tracking code to investigate intrabeam scattering effects in low emittance colliders. Simulation results obtained with particular reference to the SuperB parameters are compared with those of conventional IBS theories.and with those of a novel semi-analythical model able to predict IBS effect in terms of emittance growths. Intrabeam scattering (IBS) is associated with multiple small angle scattering events leading to emittance growth. In most electron storage rings, the growth rates arising from IBS are usually much longer than damping times due to synchrotron radiation, and its effect is not observed. However,more » IBS growth rates increase with bunch charge density, and for machines such as SuperB, that operate with high bunch charges and very low emittances, the IBS growth rates can be large enough to observe significant emittance increase. Several formalisms have been developed for calculating IBS growth rates in storage rings, notably those by Piwinski, Bjorken and Mtingwa, and their high energy approximations. Calculations show that IBS should be manageable in both SuperB rings. However these analytical models, based on Gaussian bunch distributions, cannot investigate some interesting aspects of IBS such as its impact during the damping process and its effect on the beam distribution. We developed a multiparticle tracking code, based on the Zenkevich-Bolshakov algorithm, to investigate these effects. In this communication we present the structure of the code and some simulation results obtained with particular reference to the SuperB parameters. Simulation results are compared with those of conventional IBS theories.« less

Comparative study of active plasma lenses in high-quality electron accelerator transport lines

NASA Astrophysics Data System (ADS)

van Tilborg, J.; Barber, S. K.; Benedetti, C.; Schroeder, C. B.; Isono, F.; Tsai, H.-E.; Geddes, C. G. R.; Leemans, W. P.

2018-05-01

Electrically discharged active plasma lenses (APLs) are actively pursued in compact high-brightness plasma-based accelerators due to their high-gradient, tunable, and radially symmetric focusing properties. In this manuscript, the APL is experimentally compared with a conventional quadrupole triplet, highlighting the favorable reduction in the energy dependence (chromaticity) in the transport line. Through transport simulations, it is explored how the non-uniform radial discharge current distribution leads to beam-integrated emittance degradation and a charge density reduction at focus. However, positioning an aperture at the APL entrance will significantly reduce emittance degradation without additional loss of charge in the high-quality core of the beam. An analytical model is presented that estimates the emittance degradation from a short beam driving a longitudinally varying wakefield in the APL. Optimizing laser plasma accelerator operation is discussed where emittance degradation from the non-uniform discharge current (favoring small beams inside the APL) and wakefield effects (favoring larger beam sizes) is minimized.

Comparative study of active plasma lenses in high-quality electron accelerator transport lines

DOE Office of Scientific and Technical Information (OSTI.GOV)

van Tilborg, J.; Barber, S. K.; Benedetti, C.

Electrically discharged active plasma lenses (APLs) are actively pursued in compact high-brightness plasma-based accelerators due to their high-gradient, tunable, and radially symmetric focusing properties. In this paper, the APL is experimentally compared with a conventional quadrupole triplet, highlighting the favorable reduction in the energy dependence (chromaticity) in the transport line. Through transport simulations, it is explored how the non-uniform radial discharge current distribution leads to beam-integrated emittance degradation and a charge density reduction at focus. However, positioning an aperture at the APL entrance will significantly reduce emittance degradation without additional loss of charge in the high-quality core of the beam.more » An analytical model is presented that estimates the emittance degradation from a short beam driving a longitudinally varying wakefield in the APL. Finally, optimizing laser plasma accelerator operation is discussed where emittance degradation from the non-uniform discharge current (favoring small beams inside the APL) and wakefield effects (favoring larger beam sizes) is minimized.« less

Lattice and beam optics design for suppression of CSR-induced emittance growth at the KEK-ERL test facility

NASA Astrophysics Data System (ADS)

Shimada, M.; Yokoya, K.; Suwada, T.; Enomoto, A.

2007-06-01

The lattice and beam optics of the arc section of the KEK-ERL test facility, having an energy of 200 MeV, were optimized to efficiently suppress emittance growth based on a simulation using a particle-tracking method taking coherent synchrotron radiation effects into account. The lattice optimization in the arc section was performed under two conditions: a high-current mode with a bunch charge of 76.9 pC without bunch compression, and a short-bunch mode with bunch compression, producing a final bunch length of around 0.1 ps. The simulation results showed that, in the high-current mode, emittance growth was efficiently suppressed by keeping a root-mean-square (rms) bunch length of 1 ps at a bunch charge of 76.9 pC, and in the short-bunch mode, emittance growth was kept within permissible limits with a maximum allowable bunch charge of 23.1 pC at an rms bunch length of 0.1 ps.

Comparative study of active plasma lenses in high-quality electron accelerator transport lines

DOE PAGES

van Tilborg, J.; Barber, S. K.; Benedetti, C.; ...

2018-03-13

Electrically discharged active plasma lenses (APLs) are actively pursued in compact high-brightness plasma-based accelerators due to their high-gradient, tunable, and radially symmetric focusing properties. In this paper, the APL is experimentally compared with a conventional quadrupole triplet, highlighting the favorable reduction in the energy dependence (chromaticity) in the transport line. Through transport simulations, it is explored how the non-uniform radial discharge current distribution leads to beam-integrated emittance degradation and a charge density reduction at focus. However, positioning an aperture at the APL entrance will significantly reduce emittance degradation without additional loss of charge in the high-quality core of the beam.more » An analytical model is presented that estimates the emittance degradation from a short beam driving a longitudinally varying wakefield in the APL. Finally, optimizing laser plasma accelerator operation is discussed where emittance degradation from the non-uniform discharge current (favoring small beams inside the APL) and wakefield effects (favoring larger beam sizes) is minimized.« less

On the Ionization and Ion Transmission Efficiencies of Different ESI-MS Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cox, Jonathan T.; Marginean, Ioan; Smith, Richard D.

2014-09-30

It is well known that the achievable sensitivity of electrospray ionization mass spectrometry (ESI-MS) is largely determined by the ionization efficiency in the ESI source and ion transmission efficiency through the ESI-MS interface. In this report we systematically study the ion transmission and ionization efficiencies in different ESI-MS interface configurations. The configurations under investigation include a single emitter/single inlet capillary, single emitter/multi-inlet capillary, and a subambient pressure ionization with nanoelectrospray (SPIN) MS interfaces with a single emitter and an emitter array, respectively. We present an effective method to evaluate the overall ion utilization efficiency of an ESI-MS interface by measuringmore » the total gas phase ion current transmitted through the interface and correlating it to the observed ion abundance measured in the corresponding mass spectrum. Our experimental results suggest that the overall ion utilization efficiency in the SPIN-MS interface configurations is better than that in the inlet capillary based ESI-MS interface configurations.« less

Characterization of the International Linear Collider damping ring optics

NASA Astrophysics Data System (ADS)

Shanks, J.; Rubin, D. L.; Sagan, D.

2014-10-01

A method is presented for characterizing the emittance dilution and dynamic aperture for an arbitrary closed lattice that includes guide field magnet errors, multipole errors and misalignments. This method, developed and tested at the Cornell Electron Storage Ring Test Accelerator (CesrTA), has been applied to the damping ring lattice for the International Linear Collider (ILC). The effectiveness of beam based emittance tuning is limited by beam position monitor (BPM) measurement errors, number of corrector magnets and their placement, and correction algorithm. The specifications for damping ring magnet alignment, multipole errors, number of BPMs, and precision in BPM measurements are shown to be consistent with the required emittances and dynamic aperture. The methodology is then used to determine the minimum number of position monitors that is required to achieve the emittance targets, and how that minimum depends on the location of the BPMs. Similarly, the maximum tolerable multipole errors are evaluated. Finally, the robustness of each BPM configuration with respect to random failures is explored.

Capillary Electrophoresis-nanoelectrospray Ionization-selected Reaction Monitoring Mass Spectrometry Via A True Sheathless Metal-coated Emitter Interface For Robust And High Sensitivity Sample Quantification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Xuejiang; Fillmore, Thomas L.; Gao, Yuqian

A new sheathless CITP/CZE-MS interface, based on a commercially available capillary with an integrated metal coated ESI emitter, was developed in this study aiming at overcoming the reproducibility and ruggedness problems, suffered to a certain degree by almost all the available CE-MS interfaces, and pushing the CE-MS technology suitable for routine sample analysis with high sensitivity. The new CITP/CZE-MS interface allows the electric contact between ESI voltage power supply and the CE separation liquid by using a conductive liquid that comes in contact with the metal coated surface of the ESI emitter, making it a true sheathless CE-MS interface. Stablemore » electrospray was established by avoiding the formation of gas bubbles from electro chemical reaction at the emitter tip or inside of the CE capillary. Crucial operating parameters, such as sample loading volume, flow rate, and separation voltage, were systematically evaluated for their effects on both CITP/CZE separation efficiency and MS detection sensitivity. Around one hundred CITP/CZE-MS analyses can be easily achieved by using the new sheathless CITP/CZE interface without a noticeable loss of metal coating on the ESI emitter surface, or degrading of the ESI emitter performance. The reproducibility in analyte migration time and quantitative performance of the new interface was experimentally evaluated to demonstrate a LOQ bellow 5 attomole.« less

Microfabricated electrospray emitter arrays with integrated extractor and accelerator electrodes for the propulsion of small spacecraft

NASA Astrophysics Data System (ADS)

Dandavino, S.; Ataman, C.; Ryan, C. N.; Chakraborty, S.; Courtney, D.; Stark, J. P. W.; Shea, H.

2014-07-01

Microfabricated electrospray thrusters could revolutionize the spacecraft industry by providing efficient propulsion capabilities to micro and nano satellites (1-100 kg). We present the modeling, design, fabrication and characterization of a new generation of devices, for the first time integrating in the fabrication process individual accelerator electrodes capable of focusing and accelerating the emitted sprays. Integrating these electrodes is a key milestone in the development of this technology; in addition to increasing the critical performance metrics of thrust, specific impulse and propulsive efficiency, the accelerators enable a number of new system features such as power tuning and thrust vectoring and balancing. Through microfabrication, we produced high density arrays (213 emitters cm-2) of capillary emitters, assembling them at wafer-level with an extractor/accelerator electrode pair separated by micro-sandblasted glass. Through IV measurements, we could confirm that acceleration could be decoupled from the extraction of the spray—an important element towards the flexibility of this technology. We present the largest reported internally fed microfabricated arrays operation, with 127 emitters spraying in parallel, for a total beam of 10-30 µA composed by 95% of ions. Effective beam focusing was also demonstrated, with plume half-angles being reduced from approximately 30° to 15° with 2000 V acceleration. Based on these results, we predict, with 3000 V acceleration, thrust per emitter of 38.4 nN, specific impulse of 1103 s and a propulsive efficiency of 22% with <1 mW/emitter power consumption.

Improving the Sensitivity of Mass Spectrometry by Using a New Sheath Flow Electrospray Emitter Array at Subambient Pressures

DOE PAGES

Cox, Jonathan T.; Marginean, Ioan; Kelly, Ryan T.; ...

2014-03-28

Arrays of chemically etched emitters with individualized sheath gas capillaries have been developed to enhance electrospray ionization (ESI) at subambient pressures. By including an emitter array in a subambient pressure ionization with nanoelectrospray (SPIN) source, ionization and transmission efficiency can be maximized allowing for increased sensitivity in mass spectrometric analyses. The SPIN source eliminates the major ion losses at conventional ESI-mass spectrometry (MS) interface by placing the emitter in the first vacuum region of the instrument. To facilitate stable electrospray currents in such conditions we have developed an improved emitter array with individualized sheath gas around each emitter. The utilitymore » of the new emitter arrays for generating stable multi-electrosprays at subambient pressures was probed by coupling the emitter array/SPIN source with a time of flight (TOF) mass spectrometer. The instrument sensitivity was compared between single emitter/SPIN-MS and multi-emitter/SPIN-MS configurations using an equimolar solution of 9 peptides. An increase in sensitivity correlative to the number of emitters in the array was observed.« less

Rare earth garnet selective emitter

NASA Technical Reports Server (NTRS)

Lowe, Roland A.; Chubb, Donald L.; Farmer, Serene C.; Good, Brian S.

1994-01-01

Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approximately equal to 0.74, ((4)l(sub 15/2)) - ( (4)l(sub13/2)), for Er-YAG and epsilon(sub lambda) approximately equal to 0.65, ((5)l(sub 7))-((5)l(sub 8)) for Ho-YAG) at excellent candidates for high efficiency selective emitters in the thermophotovoltaics (TPV) systems operating at moderate temperatures (1200-1500K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. This paper presents normal spectral emittance, epsilon(sub lambda), measurements of holmium (Ho), and erbium (Er) doped YAG thin film selective emitters at 1500 K, and compares those results with the theoretical spectral emittance.

Improving the Sensitivity of Mass Spectrometry by Using a New Sheath Flow Electrospray Emitter Array at Subambient Pressures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cox, Jonathan T.; Marginean, Ioan; Kelly, Ryan T.

Arrays of chemically etched emitters with individualized sheath gas capillaries have been developed to enhance electrospray ionization (ESI) at subambient pressures. By including an emitter array in a subambient pressure ionization with nanoelectrospray (SPIN) source, ionization and transmission efficiency can be maximized allowing for increased sensitivity in mass spectrometric analyses. The SPIN source eliminates the major ion losses at conventional ESI-mass spectrometry (MS) interface by placing the emitter in the first vacuum region of the instrument. To facilitate stable electrospray currents in such conditions we have developed an improved emitter array with individualized sheath gas around each emitter. The utilitymore » of the new emitter arrays for generating stable multi-electrosprays at subambient pressures was probed by coupling the emitter array/SPIN source with a time of flight (TOF) mass spectrometer. The instrument sensitivity was compared between single emitter/SPIN-MS and multi-emitter/SPIN-MS configurations using an equimolar solution of 9 peptides. An increase in sensitivity correlative to the number of emitters in the array was observed.« less

Analysis of International Space Station Vehicle Materials Exposed on Materials International Space Station Experiment from 2001 to 2011

NASA Technical Reports Server (NTRS)

Finckenor, M. M.; Golden, J. L.; Kravchenko, M.

2013-01-01

Since August 2001, the Materials on International Space Station Experiment (MISSE) has provided data on a variety of materials and spacecraft components, including samples chosen to provide sustaining engineering and life extension data for the International Space Station vehicle itself. This Technical Publication is by no means a complete set of MISSE data but does provide changes in solar absorptance, infrared emittance, and visual appearance due to atomic oxygen, ultraviolet radiation, and thermal cycling in vacuum. Conversion coatings, anodizes, thermal control coatings with organic and inorganic binders, multilayer insulation components, optical materials, and part markings are discussed.

Effect of cephalometer misalignment on calculations of facial asymmetry.

PubMed

Lee, Ki-Heon; Hwang, Hyeon-Shik; Curry, Sean; Boyd, Robert L; Norris, Kevin; Baumrind, Sheldon

2007-07-01

In this study, we evaluated errors introduced into the interpretation of facial asymmetry on posteroanterior (PA) cephalograms due to malpositioning of the x-ray emitter focal spot. We tested the hypothesis that horizontal displacements of the emitter from its ideal position would produce systematic displacements of skull landmarks that could be fully accounted for by the rules of projective geometry alone. A representative dry skull with 22 metal markers was used to generate a series of PA images from different emitter positions by using a fully calibrated stereo cephalometer. Empirical measurements of the resulting cephalograms were compared with mathematical predictions based solely on geometric rules. The empirical measurements matched the mathematical predictions within the limits of measurement error (x= 0.23 mm), thus supporting the hypothesis. Based upon this finding, we generated a completely symmetrical mathematical skull and calculated the expected errors for focal spots of several different magnitudes. Quantitative data were computed for focal spot displacements of different magnitudes. Misalignment of the x-ray emitter focal spot introduces systematic errors into the interpretation of facial asymmetry on PA cephalograms. For misalignments of less than 20 mm, the effect is small in individual cases. However, misalignments as small as 10 mm can introduce spurious statistical findings of significant asymmetry when mean values for large groups of PA images are evaluated.

Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

DOEpatents

Charache, Greg W.; Baldasaro, Paul F.; Nichols, Greg J.

1998-01-01

A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eV

Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

DOEpatents

Charache, G.W.; Baldasaro, P.F.; Nichols, G.J.

1998-06-23

A thermophotovoltaic energy conversion device and a method for making the device are disclosed. The device includes a substrate formed from a bulk single crystal material having a bandgap (E{sub g}) of 0.4 eV < E{sub g} < 0.7 eV and an emitter fabricated on the substrate formed from one of a p-type or an n-type material. Another thermophotovoltaic energy conversion device includes a host substrate formed from a bulk single crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers. 12 figs.

Determination of the efficiency of commercially available dose calibrators for beta-emitters.

PubMed

Valley, Jean-François; Bulling, Shelley; Leresche, Michel; Wastiel, Claude

2003-03-01

The goals of this investigation are to determine whether commercially available dose calibrators can be used to measure the activity of beta-emitting radionuclides used in pain palliation and to establish whether manufacturer-supplied calibration factors are appropriate for this purpose. Six types of commercially available dose calibrators were studied. Dose calibrator response was controlled for 5 gamma-emitters used for calibration or typically encountered in routine use. For the 4 most commonly used beta-emitters ((32)P, (90)Sr, (90)Y, and (169)Er) dose calibrator efficiency was determined in the syringe geometry used for clinical applications. Efficiency of the calibrators was also measured for (153)Sm and (186)Re, 2 beta-emitters with significant gamma-contributions. Source activities were traceable to national standards. All calibrators measured gamma-emitters with a precision of +/-10%, in compliance with Swiss regulatory requirements. For beta-emitters, dose calibrator intrinsic efficiency depends strongly on the maximal energy of the beta-spectrum and is notably low for (169)Er. Manufacturer-supplied calibration factors give accurate results for beta-emitters with maximal beta-energy in the middle-energy range (1 MeV) but are not appropriate for use with low-energy ((169)Er) or high-energy ((90)Y) beta-emitters. beta-emitters with significant gamma-contributions behave like gamma-emitters. Commercially available dose calibrators have an intrinsic efficiency that is sufficient for the measurement of beta-emitters, including beta-emitters with a low maximum beta-energy. Manufacturer-supplied calibration factors are reliable for gamma-emitters and beta-emitters in the middle-energy range. For low- and high-energy beta-emitters, the use of manufacturer-supplied calibration factors introduces significant measurement inaccuracy.

Improving low-level plasma protein mass spectrometry-based detection for candidate biomarker discovery and validation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Page, Jason S.; Kelly, Ryan T.; Camp, David G.

2008-09-01

Methods. To improve the detection of low abundance protein candidate biomarker discovery and validation, particularly in complex biological fluids such as blood plasma, increased sensitivity is desired using mass spectrometry (MS)-based instrumentation. A key current limitation on the sensitivity of electrospray ionization (ESI) MS is due to the fact that many sample molecules in solution are never ionized, and the vast majority of the ions that are created are lost during transmission from atmospheric pressure to the low pressure region of the mass analyzer. Two key technologies, multi-nanoelectrospray emitters and the electrodynamic ion funnel have recently been developed and refinedmore » at Pacific Northwest National Laboratory (PNNL) to greatly improve the ionization and transmission efficiency of ESI MS based analyses. Multi-emitter based ESI enables the flow from a single source (typically a liquid chromatography [LC] column) to be divided among an array of emitters (Figure 1). The flow rate delivered to each emitter is thus reduced, allowing the well-documented benefits of nanoelectrospray 1 for both sensitivity and quantitation to be realized for higher flow rate separations. To complement the increased ionization efficiency afforded by multi-ESI, tandem electrodynamic ion funnels have also been developed at PNNL, and shown to greatly improve ion transmission efficiency in the ion source interface.2, 3 These technologies have been integrated into a triple quadrupole mass spectrometer for multiple reaction monitoring (MRM) of probable biomarker candidates in blood plasma and show promise for the identification of new species even at low level concentrations.« less

Multinozzle emitter arrays for ultrahigh-throughput nanoelectrospray mass spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Daojing; Mao, Pan; Wang, Hung-Ta

The present invention provides for a structure comprising a plurality of emitters, wherein a first nozzle of a first emitter and a second nozzle of a second emitter emit in two directions that are not or essentially not in the same direction; wherein the walls of the nozzles and the emitters form a monolithic whole. The present invention also provides for a structure comprising an emitter with a sharpened end from which the emitter emits; wherein the emitters forms a monolithic whole. The present invention also provides for a fully integrated separation of proteins and small molecules on a siliconmore » chip before the electrospray mass spectrometry analysis.« less

Parallel nanomanufacturing via electrohydrodynamic jetting from microfabricated externally-fed emitter arrays

NASA Astrophysics Data System (ADS)

Ponce de Leon, Philip J.; Hill, Frances A.; Heubel, Eric V.; Velásquez-García, Luis F.

2015-06-01

We report the design, fabrication, and characterization of planar arrays of externally-fed silicon electrospinning emitters for high-throughput generation of polymer nanofibers. Arrays with as many as 225 emitters and with emitter density as large as 100 emitters cm-2 were characterized using a solution of dissolved PEO in water and ethanol. Devices with emitter density as high as 25 emitters cm-2 deposit uniform imprints comprising fibers with diameters on the order of a few hundred nanometers. Mass flux rates as high as 417 g hr-1 m-2 were measured, i.e., four times the reported production rate of the leading commercial free-surface electrospinning sources. Throughput increases with increasing array size at constant emitter density, suggesting the design can be scaled up with no loss of productivity. Devices with emitter density equal to 100 emitters cm-2 fail to generate fibers but uniformly generate electrosprayed droplets. For the arrays tested, the largest measured mass flux resulted from arrays with larger emitter separation operating at larger bias voltages, indicating the strong influence of electrical field enhancement on the performance of the devices. Incorporation of a ground electrode surrounding the array tips helps equalize the emitter field enhancement across the array as well as control the spread of the imprints over larger distances.

Mn-based nanostructured building blocks: Synthesis, characterization and applications

NASA Astrophysics Data System (ADS)

Beltran Huarac, Juan

The quest for smaller functional elements of devices has stimulated increased interest in charge-transfer phenomena at the nanoscale. Mn-based nanostructured building blocks are particularly appealing given that the excited states of high-spin Mn2+ ions induce unusual d-d energy transfer processes, which is critical for better understanding the performance of electronic and spintronic devices. These nanostructures also exhibit unique properties superior to those of common Fe- and Co-based nanomaterials, including: excellent structural flexibility, enhanced electrochemical energy storage, effective ion-exchange dynamics, more comprehensive transport mechanisms, strong quantum yield, and they act as effective luminescent centers for more efficient visible light emitters. Moreover, Mn-based nanostructures (MBNs) are crucial for the design and assembly of inexpensive nanodevices in diluted magnetic semiconductors (DMS), optoelectronics, magneto-optics, and field-effect transistors, owing to the great abundance and low-cost of Mn. Nonetheless, the paucity of original methods and techniques to fabricate new multifunctional MBNs that fulfill industrial demands limits the sustainable development of innovative technology in materials sciences. In order to meet this critical need, in this thesis we develop and implement novel methods and techniques to fabricate zero- and one-dimensional highly-crystalline new-generation MBNs conducive to the generation of new technology, and provide alternative and feasible miniaturization strategies to control and devise at nanometric precision their size, shape, structure and composition. Herein, we also establish the experimental conditions to grow Mn-based nanowires (NWs), nanotubes (NTs), nanoribbons (NRs), nanosaws (NSs), nanoparticles (NPs) and nanocomposites (NCs) via chemical/physical deposition and co-precipitation chemical routes, and determine the pertinent arrangements to our experimental schemes in order to extend our bottom-up approaches towards the fabrication of different types of functional MBNs. Likewise, strategic procedures that advance the facile integration of these self-assembled nanostructures with carbon-based and magnetic/optical materials, chalcogenides, oxides, and ferroics are widely analyzed and discussed. Furthermore, we present the attractive peculiarities of three versatile MBN systems (bridging the gap between their advantageous properties and the lack of methods for their fabrication): single-crystal saw-like MnS NRs, and single-crystal MnS NWs conformally coated with carbon; doped rare-earth manganite NCs, and carbon NTs conformally coated with doped rare-earth manganite; and ZnS:Mn NPs, and Fe3O4/ZnS:Mn NCs. Concerning the applicative significance, the main features of these three systems obtained by our method are suitable to advance direct applications in nanotechnology. In this regard, this work represents a step ahead in the following areas: i) alternative anode materials to enhance the capacity and cycling performance of low-drain, long-life, low-cost, high-energy density light-weight and safer lithium-ion batteries; ii) promising luminescent materials to improve the optoelectronic performance of visible light emitters; iii) new elements for field-effect transistors that outperform the transport properties of conventional carbon-based channels; iv) bifunctional materials exhibiting optical response sensitive to external magnetic fields vital for DMS; v) novel types of nanocantilevers useful for nanosensors and nanotweezers; vi) unique multiferroics materials that exhibit magnetoelectric coupling at room temperature for spintronics; vii) potential core-shell materials showing stress-free and protective carbon shells for shock-resistance semiconductors; and viii) high-quality ceramics useful as starting materials to deposit films by pulsed laser deposition, sputtering and thermal evaporation techniques.

Studies of silicon pn junction solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1977-01-01

Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

Beam Conditioning for FELs: Consequences and Methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolski, Andrzej; Penn, Gregory; Sessler, Andrew

2003-10-09

The consequences of beam conditioning in four example cases (VISA, a Soft X-Ray FEL, LCLS and a ''Greenfield'' FEL) are examined. It is shown that in emittance limited cases, proper conditioning reduces sensitivity to the transverse emittance, and allows stronger focusing in the undulator. Simulations show higher saturation power, with gain lengths reduced up to a factor of two. The beam dynamics in a general conditioning system are studied, with ''matching conditions'' derived for achieving conditioning without growth in effective emittance. Various conditioners are considered, and expressions derived for the amount of conditioning provided in each case when the matchingmore » conditions are satisfied. We discuss the prospects for conditioners based on laser and plasma systems.« less

Orientation-Dependent Exciton-Plasmon Coupling in Embedded Organic/Metal Nanowire Heterostructures.

PubMed

Li, Yong Jun; Hong, Yan; Peng, Qian; Yao, Jiannian; Zhao, Yong Sheng

2017-10-24

The excitation of surface plasmons by optical emitters based on exciton-plasmon coupling is important for plasmonic devices with active optical properties. It has been theoretically demonstrated that the orientation of exciton dipole can significantly influence the coupling strength, yet systematic study of the coupling process in nanostructures is still hindered by the lack of proper material systems. In this work, we have experimentally investigated the orientation-dependent exciton-plasmon coupling in a rationally designed organic/metal nanowire heterostructure system. The heterostructures were prepared by inserting silver nanowires into crystalline organic waveguides during the self-assembly of dye molecules. Structures with different exciton orientations exhibited varying coupling efficiencies. The near-field exciton-plasmon coupling facilitates the design of nanophotonic devices based on the directional surface plasmon polariton propagations.

Modelling of hydrogen transport in silicon solar cell structures under equilibrium conditions

NASA Astrophysics Data System (ADS)

Hamer, P.; Hallam, B.; Bonilla, R. S.; Altermatt, P. P.; Wilshaw, P.; Wenham, S.

2018-01-01

This paper presents a model for the introduction and redistribution of hydrogen in silicon solar cells at temperatures between 300 and 700 °C based on a second order backwards difference formula evaluated using a single Newton-Raphson iteration. It includes the transport of hydrogen and interactions with impurities such as ionised dopants. The simulations lead to three primary conclusions: (1) hydrogen transport across an n-type emitter is heavily temperature dependent; (2) under equilibrium conditions, hydrogen is largely driven by its charged species, with the switch from a dominance of negatively charged hydrogen (H-) to positively charged hydrogen (H+) within the emitter region critical to significant transport across the junction; and (3) hydrogen transport across n-type emitters is critically dependent upon the doping profile within the emitter, and, in particular, the peak doping concentration. It is also observed that during thermal processes after an initial high temperature step, hydrogen preferentially migrates to the surface of a phosphorous doped emitter, drawing hydrogen out of the p-type bulk. This may play a role in several effects observed during post-firing anneals in relation to the passivation of recombination active defects and even the elimination of hydrogen-related defects in the bulk of silicon solar cells.

Effect of phonon-bath dimensionality on the spectral tuning of single-photon emitters in the Purcell regime

NASA Astrophysics Data System (ADS)

Chassagneux, Yannick; Jeantet, Adrien; Claude, Théo; Voisin, Christophe

2018-05-01

We develop a theoretical frame to investigate the spectral dependence of the brightness of a single-photon source made of a solid-state nanoemitter embedded in a high-quality factor microcavity. This study encompasses the cases of localized excitons embedded in a one-, two-, or three-dimensional matrix. The population evolution is calculated based on a spin-boson model, using the noninteracting blip approximation. We find that the spectral dependence of the single-photon source brightness (hereafter called spectral efficiency) can be expressed analytically through the free-space emission and absorption spectra of the emitter, the vacuum Rabi splitting, and the loss rates of the system. In other words, the free-space spectrum of the emitter encodes all the relevant information on the interaction between the exciton and the phonon bath to obtain the dynamics of the cavity-coupled system. We compute numerically the spectral efficiency for several types of localized emitters differing by the phonon bath dimensionality. In particular, in low-dimensional systems where this interaction is enhanced, a pronounced asymmetric energy exchange between the emitter and the cavity on the phonon sidebands yields a considerable extension of the tuning range of the source through phonon-assisted cavity feeding, possibly surpassing that of a purely resonant system.

C-history method: rapid measurement of the initial emittable concentration, diffusion and partition coefficients for formaldehyde and VOCs in building materials.

PubMed

Xiong, Jianyin; Yao, Yuan; Zhang, Yinping

2011-04-15

The initial emittable concentration (C(m,0)), the diffusion coefficient (D(m)), and the material/air partition coefficient (K) are the three characteristic parameters influencing emissions of formaldehyde and volatile organic compounds (VOCs) from building materials or furniture. It is necessary to determine these parameters to understand emission characteristics and how to control them. In this paper we develop a new method, the C-history method for a closed chamber, to measure these three parameters. Compared to the available methods of determining the three parameters described in the literature, our approach has the following salient features: (1) the three parameters can be simultaneously obtained; (2) it is time-saving, generally taking less than 3 days for the cases studied (the available methods tend to need 7-28 days); (3) the maximum relative standard deviations of the measured C(m,0), D(m) and K are 8.5%, 7.7%, and 9.8%, respectively, which are acceptable for engineering applications. The new method was validated by using the characteristic parameters determined in the closed chamber experiment to predict the observed emissions in a ventilated full scale chamber experiment, proving that the approach is reliable and convincing. Our new C-history method should prove useful for rapidly determining the parameters required to predict formaldehyde and VOC emissions from building materials as well as for furniture labeling.

Carbon nanotube emitters and field emission triode

NASA Astrophysics Data System (ADS)

Fan, Zhiqin; Zhang, Binglin; Yao, Ning; Zhang, Lan; Ma, Huizhong; Deng, Jicai

2006-05-01

Based on our study on field emission from multi-walled carbon nanotubes (MWNTs), we experimentally manufactured field emission display (FED) triode with a MWNTs cold cathode, and demonstrated an excellent performance of MWNTs as field emitters. The measured luminance of the phosphor screens was 1.8*10^(3) cd/m2 for green light. The emission is stable with a fluctuation of only 1.5% at an average current of 260 'mu'A.

Prediction of field emitter cathode lifetime based on measurement of I- V curves

NASA Astrophysics Data System (ADS)

Bormashov, V. S.; Nikolski, K. N.; Baturin, A. S.; Sheshin, E. P.

2003-06-01

A technique is presented, which allows the prediction of field emitter cathode lifetime without long-term direct measurements of cathode parameters stability. This technique is based on periodic measurements of cathode I- V characteristics. Moreover, it allows performing a post-experiment optimization for the appropriate choice of the feedback system to provide a stable operation during a long time. The proposed technique was applied to study the emission properties of reticulated vitreous carbon (RVC) and thermo-enlarged graphite (TEG). For the given cathodes, the characteristic time of the cathode destruction was estimated.